Sintering temperature effect on electrical and thermal properties of Zn1-xAlxO as thermoelectric material candidate

NASA Astrophysics Data System (ADS)

Fajarin, Rindang; Rahel, Amelthia; Widyastuti

2018-04-01

Thermoelectric is a device to convert residual heat energy into electricity. Electrical and thermal properties of constituent material determine thermoelectric efficiency. One of metal oxides, namely zinc oxide (ZnO), is highly stable in a large temperature range, non-toxic, low cost and eco-friendly, has potential application as thermoelectric at high temperature. The aims of this study are to synthesize Zn0.98Al0.02O by coprecipitation method using ZnO and Al2O3 powders as raw materials, and to investigate the effect of sintering temperatures (at 700, 800, 900, and 950°C) on the electrical and thermal properties of the material. The sample products were analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive x-ray (EDX) measurements to identify phase content, to observe particle morphology and to analyze distribution of elements in the sample, respectively. LCR meter was conducted to study electrical measurements of the samples. Further, thermal properties of the samples were analyzed by TGA measurements. The data show that Al3+ ions have been successfully doped into ZnO crystal lattice and they tend to increase the electrical conductivity of the samples. The sintered Zn0.98Al0.02O sample at 900°C has the highest conductivity value (4.53 × 10-4 S/m) compared to the others. It is relatively stable at high temperature, and thus, it can be used as one promising candidate for thermoelectric material at high temperature.

High temperature thermoelectric properties of rock-salt structure PbS

DOE PAGES

Parker, David S.; Singh, David J.

2013-12-18

We present an analysis of the high temperature transport properties of rock-salt structure PbS, a sister compound to the better studied lead chalcogenides PbSe and PbTe. In this study, we find thermopower magnitudes exceeding 200 V/K in a wide doping range for temperatures of 800 K and above. Based on these calculations, and an analysis of recent experimental work we find that this material has a potential for high thermoelectric performance. Also, we find favorable mechanical properties, based on an analysis of published data.

Aspects of metallic low-temperature transport in Mott-insulator/band-insulator superlattices: Optical conductivity and thermoelectricity

NASA Astrophysics Data System (ADS)

Rüegg, Andreas; Pilgram, Sebastian; Sigrist, Manfred

2008-06-01

We investigate the low-temperature electrical and thermal transport properties in atomically precise metallic heterostructures involving strongly correlated electron systems. The model of the Mott-insulator/band-insulator superlattice was discussed in the framework of the slave-boson mean-field approximation and transport quantities were derived by use of the Boltzmann transport equation in the relaxation-time approximation. The results for the optical conductivity are in good agreement with recently published experimental data on (LaTiO3)N/(SrTiO3)M superlattices and allow us to estimate the values of key parameters of the model. Furthermore, predictions for the thermoelectric response were made and the dependence of the Seebeck coefficient on model parameters was studied in detail. The width of the Mott-insulating material was identified as the most relevant parameter, in particular, this parameter provides a way to optimize the thermoelectric power factor at low temperatures.

Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

2018-02-01

Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

The impact of sintering temperature on structural, morphological and thermoelectric properties of zinc titanate nanocrystals

NASA Astrophysics Data System (ADS)

Chandrasekaran, P.; Murugu thiruvalluvan, T. M. V.; Arivanandhan, M.; Jayakumari, T.; Anandan, P.

2017-07-01

The effect of sintering temperature and Ti:Zn ratio of precursor solutions on the structural, morphological and thermoelectric properties of Zinc titanate (TZO) nanocrystals have been investigated. TZO nanocrystals were synthesized by changing the molar ratio of precursors of Zn and Ti sources by sol-gel method. The synthesized materials were sintered at different temperatures and the formation of multi phases of TZO were analysed by x-ray diffraction studies. The morphological properties and composition of TZO samples were studied by FESEM, TEM and XPS analysis. The thermoelectric properties of the TZO have been studied by measuring the Seebeck coefficient of the materials at various temperature. It was observed that the Seebeck coefficient of TZO sample increases with increasing Zn content in the sample especially at high temperature.

Promising thermoelectric properties of phosphorenes.

PubMed

Sevik, Cem; Sevinçli, Hâldun

2016-09-02

Electronic, phononic, and thermoelectric transport properties of single layer black- and blue-phosphorene structures are investigated with first-principles based ballistic electron and phonon transport calculations employing hybrid functionals. The maximum values of room temperature thermoelectric figure of merit, ZT corresponding to armchair and zigzag directions of black-phosphorene, ∼0.5 and ∼0.25, are calculated as rather smaller than those obtained with first-principles based semiclassical Boltzmann transport theory calculations. On the other hand, the maximum value of room temperature ZT of blue-phosphorene is predicted to be substantially high and remarkable values as high as 2.5 are obtained for elevated temperatures. Besides the fact that these figures are obtained at the ballistic limit, our findings mark the strong possibility of high thermoelectric performance of blue-phosphorene in new generation thermoelectric applications.

Thermoelectric Properties of n-type SnSe Single Crystal

NASA Astrophysics Data System (ADS)

Nguyen, Phuong; Duong, Anh Tuan; Rhim, S. H.; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Cho, Sunglae; Kwon, Suyong; Song, Jae Yong; Park, Hyun Min

Although thermoelectric materials are well known for their reliability and have been used for many years, even in the field of space engineering, their performance is quite small due to low energy conversion efficiency. Dimensionless figure of merit, ZT = S2. σ.T.κ-1 (where S, σ, T, κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively) is conveniently used to evaluate the conversion efficiency of a thermoelectric materials. Recently, the highest value of ZT to date has been reported for single crystal SnSe, ZT = 2.6 along the b axis of unit cell at 923 K. This temperature is rather high and the range of temperature for high reported ZT is quite narrow. Here we report an attempt to modify the thermoelectric properties of SnSe by using group V and VII as n-type dopant. A negative value of Seebeck coefficient was observed and the power factor reached a peak of 10 μW.K-2.cm-1 at around 600 K. The maximum n-type ZT was 0.57 at 650 K. We will discuss on dopant dependent thermoelectric properties of n-type SnSe single crystals.

A supercell approach to the doping effect on the thermoelectric properties of SnSe.

PubMed

Suzuki, Yasumitsu; Nakamura, Hisao

2015-11-28

We study the thermoelectric properties of tin selenide (SnSe) by using first-principles calculations coupled with the Boltzmann transport theory. A recent experimental study showed that SnSe gives an unprecedented thermoelectric figure of merit ZT of 2.6 ± 0.3 in the high-temperature (>750 K) phase, while ZT in the low-temperature phase (<750 K) is much smaller than that of the high-temperature phase. Here we explore the possibility of increasing ZT in the low-temperature regime by carrier doping. For this purpose, we adopt a supercell approach to model the doped systems. We first examine the validity of the conventional rigid-band approximation (RBA), and then investigate the thermoelectric properties of Ag or Bi doped SnSe as p- or n-type doped materials using our supercell method. We found that both types of doping improve ZT and/or the power factor of the low-temperature phase SnSe, but only after the adjustment of the appropriate doping level is achieved.

Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

DOE PAGES

Claudio, Tania; Stein, Niklas; Peterman, Nils; ...

2015-10-26

The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param-more » eter variations.« less

High temperature experimental characterization of microscale thermoelectric effects

NASA Astrophysics Data System (ADS)

Favaloro, Tela

Thermoelectric devices have been employed for many years as a reliable energy conversion technology for applications ranging from the cooling of sensors or charge coupled devices to the direct conversion of heat into electricity for remote power generation. However, its relatively low conversion efficiency has limited the implementation of thermoelectric materials for large scale cooling and waste heat recovery applications. Recent advances in semiconductor growth technology have enabled the precise and selective engineering of material properties to improve the thermoelectric figure of merit and thus the efficiency of thermoelectric devices. Accurate characterization at the intended operational temperature of novel thermoelectric materials is a crucial component of the optimization process in order to fundamentally understand material behavior and evaluate performance. The objective of this work is to provide the tools necessary to characterize high efficiency bulk and thin-film materials for thermoelectric energy conversion. The techniques developed here are not bound to specific material or devices, but can be generalized to any material system. Thermoreflectance imaging microscopy has proven to be invaluable for device thermometry owing to its high spatial and temporal resolutions. It has been utilized in this work to create two-dimensional temperature profiles of thermoelectric devices during operation used for performance analysis of novel materials, identification of defects, and visualization of high speed transients in a high-temperature imaging thermostat. We report the development of a high temperature imaging thermostat capable of high speed transient thermoelectric characterization. In addition, we present a noninvasive method for thermoreflectance coefficient calibration ideally suited for vacuum and thus high temperature employment. This is the first analysis of the thermoreflectance coefficient of commonly used metals at high-temperatures. High

Estimating Energy Conversion Efficiency of Thermoelectric Materials: Constant Property Versus Average Property Models

NASA Astrophysics Data System (ADS)

Armstrong, Hannah; Boese, Matthew; Carmichael, Cody; Dimich, Hannah; Seay, Dylan; Sheppard, Nathan; Beekman, Matt

2017-01-01

Maximum thermoelectric energy conversion efficiencies are calculated using the conventional "constant property" model and the recently proposed "cumulative/average property" model (Kim et al. in Proc Natl Acad Sci USA 112:8205, 2015) for 18 high-performance thermoelectric materials. We find that the constant property model generally predicts higher energy conversion efficiency for nearly all materials and temperature differences studied. Although significant deviations are observed in some cases, on average the constant property model predicts an efficiency that is a factor of 1.16 larger than that predicted by the average property model, with even lower deviations for temperature differences typical of energy harvesting applications. Based on our analysis, we conclude that the conventional dimensionless figure of merit ZT obtained from the constant property model, while not applicable for some materials with strongly temperature-dependent thermoelectric properties, remains a simple yet useful metric for initial evaluation and/or comparison of thermoelectric materials, provided the ZT at the average temperature of projected operation, not the peak ZT, is used.

Oxide Thermoelectric Materials: A Structure-Property Relationship

NASA Astrophysics Data System (ADS)

Nag, Abanti; Shubha, V.

2014-04-01

Recent demand for thermoelectric materials for power harvesting from automobile and industrial waste heat requires oxide materials because of their potential advantages over intermetallic alloys in terms of chemical and thermal stability at high temperatures. Achievement of thermoelectric figure of merit equivalent to unity ( ZT ≈ 1) for transition-metal oxides necessitates a second look at the fundamental theory on the basis of the structure-property relationship giving rise to electron correlation accompanied by spin fluctuation. Promising transition-metal oxides based on wide-bandgap semiconductors, perovskite and layered oxides have been studied as potential candidate n- and p-type materials. This paper reviews the correlation between the crystal structure and thermoelectric properties of transition-metal oxides. The crystal-site-dependent electronic configuration and spin degeneracy to control the thermopower and electron-phonon interaction leading to polaron hopping to control electrical conductivity is discussed. Crystal structure tailoring leading to phonon scattering at interfaces and nanograin domains to achieve low thermal conductivity is also highlighted.

Transport properties of cubic crystalline Ge 2Sb 2Te 5: a potential low-temperature thermoelectric material.

DOE PAGES

Sun, Jifeng; Mukhopadhyay, Saikat; Subedi, Alaska; ...

2015-03-26

Ge 2Sb 2Te 5 (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coe cients 200 - 300 μV/K in its cubic crystalline phase (c-GST) at remarkably high p-type doping levels of 1 10 19 - 6 10 19 cm -3 at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coe cient was found to exceed 200 μV/K for a doping range 1 10 19 - 3.5 10 19 cm -3. Given that the lattice thermal conductivity in this phase has already beenmore » measured to be extremely low ( 0.7 W/m-K at 300 K), our results suggest the possibility of using c-GST as a low-temperature thermoelectric material.« less

Thermoelectric Properties of Complex Zintl Phases

NASA Astrophysics Data System (ADS)

Snyder, G. Jeffrey

2008-03-01

Complex Zintl phases make ideal thermoelectric materials because they can exhibit the necessary ``electron-crystal, phonon-glass'' properties required for high thermoelectric efficiency. Complex crystal structures can lead to high thermoelectric figure of merit (zT) by having extraordinarily low lattice thermal conductivity. A recent example is the discovery that Yb14MnSb11, a complex Zintl compound, has twice the zT as the SiGe based material currently in use at NASA. The high temperature (300K - 1300K) electronic properties of Yb14MnSb11 can be understood using models for heavily doped semiconductors. The free hole concentration, confirmed by Hall effect measurements, is set by the electron counting rules of Zintl and the valence of the transition metal (Mn^+2). Substitution of nonmagnetic Zn^+2 for the magnetic Mn^+2 reduces the spin-disorder scattering and leads to increased zT (10%). The reduction of spin-disorder scattering is consistent with the picture of Yb14MnSb11 as an underscreened Kondo lattice as derived from low temperature measurements. The hole concentration can be reduced by the substitution of Al^+3 for Mn^+2, which leads to an increase in the Seebeck coefficient and electrical resistivity consistent with models for degenerate semiconductors. This leads to further improvements (about 25%) in zT and a reduction in the temperature where the zT peaks. The peak in zT is due to the onset of minority carrier conduction and can be correlated with reduction in Seebeck coefficient, increase in electrical conductivity and increase in thermal conductivity due to bipolar thermal conduction.

Thermoelectric Properties of Barium Plumbate Doped by Alkaline Earth Oxides

NASA Astrophysics Data System (ADS)

Eufrasio, Andreza; Bhatta, Rudra; Pegg, Ian; Dutta, Biprodas

Ceramic oxides are now being considered as a new class of thermoelectric materials because of their high stability at elevated temperatures. Such materials are especially suitable for use as prospective thermoelectric power generators because high temperatures are encountered in such operations. The present investigation uses barium plumbate (BaPbO3) as the starting material, the thermoelectric properties of which have been altered by judicious cation substitutions. BaPbO3 is known to exhibit metallic properties which may turn semiconducting as a result of compositional changes without precipitating a separate phase and/or altering the basic perovskite crystal structure. Perovskite structures are noted for their large interstitial spaces which can accommodate a large variety of ``impurity'' ions. As BaPbO3 has high electrical conductivity, σ = 2.43x105Ω-1 m-1 at room temperature, its thermopower, S, is relatively low, 23 μV/K, as expected. With a thermal conductivity, k, of 4.83Wm-1K-1, the figure of merit (ZT =S2 σ Tk-1) of BaPbO3 is only 0.01 at T = 300K. The objective of this investigation is to study the variation of thermoelectric properties of BaPbO3 as Ba and Pb ions are systematically substituted by alkaline earth ions.

Low temperature thermoelectric properties of p-type doped single-crystalline SnSe

NASA Astrophysics Data System (ADS)

Wang, Si; Hui, Si; Peng, Kunling; Bailey, Trevor P.; Liu, Wei; Yan, Yonggao; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

2018-04-01

SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, our study implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

NASA Astrophysics Data System (ADS)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Synthesis and thermoelectric properties of Rashba semiconductor BiTeBr with intensive texture.

PubMed

Xin, Jia-Zhan; Fu, Chen-Guang; Shi, Wu-Jun; Li, Guo-Wei; Auffermann, Gudrun; Qi, Yan-Peng; Zhu, Tie-Jun; Zhao, Xin-Bing; Felser, Claudia

2018-01-01

Bismuth tellurohalides with Rashba-type spin splitting exhibit unique Fermi surface topology and are developed as promising thermoelectric materials. However, BiTeBr, which belongs to this class of materials, is rarely investigated in terms of the thermoelectric transport properties. In the study, polycrystalline bulk BiTeBr with intensive texture was synthesized via spark plasma sintering (SPS). Additionally, its thermoelectric properties above room temperature were investigated along both the in-plane and out-plane directions, and they exhibit strong anisotropy. Low sound velocity along two directions is found and contributes to its low lattice thermal conductivity. Polycrystalline BiTeBr exhibits relatively good thermoelectric performance along the in-plane direction, with a maximum dimensionless figure of merit (ZT) of 0.35 at 560 K. Further enhancements of ZT are expected by utilizing systematic optimization strategies.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

NASA Astrophysics Data System (ADS)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

Thermoelectric properties of SnSe2 monolayer.

PubMed

Li, Guanpeng; Ding, Guangqian; Gao, Guoying

2017-01-11

The 2H (MoS 2 -type) phase of 2D transition metal dichalcogenides (TMDCs) has been extensively studied and exhibits excellent electronic and optoelectronic properties, but the high phonon thermal conductivity is detrimental to the thermoelectric performances. Here, we use first-principles methods combined with Boltzmann transport theory to calculate the electronic and phononic transport properties of 1T (CdI 2 -type) SnSe 2 monolayer, a recently realized 2D metal dichalcogenide semiconductor. The calculated band gap is 0.85 eV, which is a little larger than the bulk value. Lower phonon thermal conductivity and higher power factor are obtained in 1T-SnSe 2 monolayer compared to 2H-TMDCs monolayers. The low phonon thermal conductivity (3.27 W mK -1 at room temperature) is mainly due to the low phonon frequency of acoustic modes and the coupling of acoustic modes with optical modes. We also find that the p-type has better thermoelectric performance than the n-type, and the figure of merit within p-type can reach 0.94 at 600 K for 1T-SnSe 2 monolayer, which is higher than those of most 2H-TMDCs monolayers, making 1T-SnSe 2 monolayer a promising candidate for thermoelectric applications.

La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

PubMed

Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

2014-01-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Synthesis and properties of nanocrystalline Bi-Te based thermoelectric materials for energy application

NASA Astrophysics Data System (ADS)

Almohaimeed, Sulaiman

Thermoelectric phenomenon is the science associated with converting thermal energy into electricity based on the Seebeck effect. Bismuth telluride Bi 2Te3 is currently considered to be the state-of-the art thermoelectric material with high efficiency for low temperature applications and is therefore attractive for energy harvesting processes. Nanostructures thermoelectric materials provide a novel way to enhance thermoelectric properties and are considered to be the efficient building blocks for thermoelectric devices. In this work, n- and p-type bulk nanocrystalline Bismuth telluride thermoelectric materials were prepared by mechanical alloying / ball milling technique. The produced nano-crystalline powder were then consolidated using hot compaction under inert atmosphere. The novel processing of these materials maintained the nanostructure in both n- and p-type. Structural properties of the n- and p-types were characterized using X ray diffraction, scanning electron microscopy and transmission electron microscope. These techniques proved that the average grian size of the milled thermoelectric materials was about 20 nm. Accordingly, a Significant improvement in the figure of merit (ZT) is achieved through significant lattice thermal conductivity reduction and Seebeck coefficient improvement. The maximum ZT value for the n-type nanocrystalline thermoelectric was 1.67 at 373 K while the maximum ZT value for the p-type was 1.78 at the same temperature. These values are considered to be the highest values reported for similar materials. Evaluation of the mechanical properties was also performed through microhardness measurement using Vickers micro-hardness test, which shows an enhancement in mechanical properties for the produced materials.

Organic thermoelectric materials for energy harvesting and temperature control

NASA Astrophysics Data System (ADS)

Russ, Boris; Glaudell, Anne; Urban, Jeffrey J.; Chabinyc, Michael L.; Segalman, Rachel A.

2016-10-01

Conjugated polymers and related processing techniques have been developed for organic electronic devices ranging from lightweight photovoltaics to flexible displays. These breakthroughs have recently been used to create organic thermoelectric materials, which have potential for wearable heating and cooling devices, and near-room-temperature energy generation. So far, the best thermoelectric materials have been inorganic compounds (such as Bi2Te3) that have relatively low Earth abundance and are fabricated through highly complex vacuum processing routes. Molecular materials and hybrid organic-inorganic materials now demonstrate figures of merit approaching those of these inorganic materials, while also exhibiting unique transport behaviours that are suggestive of optimization pathways and device geometries that were not previously possible. In this Review, we discuss recent breakthroughs for organic materials with high thermoelectric figures of merit and indicate how these materials may be incorporated into new module designs that take advantage of their mechanical and thermoelectric properties.

Effects of High-Pressure High-Temperature Sintering on the Band Gap and Thermoelectric Properties of PbSe

NASA Astrophysics Data System (ADS)

Chen, Bo; Li, Yi; Sun, Zhen-Ya

2018-06-01

In this study, PbSe bulk samples were prepared by a high-pressure high-temperature (HPHT) sintering technique, and the phase compositions, band gaps and thermoelectric properties of the samples were systematically investigated. The sintering pressure exerts a significant influence on the preferential orientation, band gap and thermoelectric properties of PbSe. With increasing pressure, the preferential orientation decreases, mainly due to the decreased crystallinity, while the band gap first decreases and then increases. The electrical conductivity and power factor decrease gradually with increasing pressure, mainly attributed to the decreased carrier concentration and mobility. Consequently, the sample prepared by 2 GPa shows the highest thermoelectric figure-of-merit, ZT, of 0.55 at ˜ 475 K. The ZT of the HPHT-sintered PbSe could be further improved by properly doping or optimizing the HPHT parameters. This study further demonstrates that the sintering pressure could be another degree of freedom to manipulate the band structure and thermoelectric properties of materials.

Lead sulphide: Low cost, abundant thermoelectrics

NASA Astrophysics Data System (ADS)

Ahmad, Sajid; Singh, Ajay; Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, Anil; Muthe, K. P.; Gadkari, S. C.

2018-04-01

Lead and sulphur are the most abundant and low cost materials on the earth's crust, lead chalcogenide (S, Se and Te) materials have got best applications in thermoelectric power generations. Among the chalcogenides, selenium and tellurium are costlier and are more toxic material than sulphur. [1][2] Decreasing the thermal conductivity has been proven to be the easiest approach to improve the thermoelectric performance of a material. In the present work, the lead sulphide (PbS) and SrxPb(1-x)S composite materials were synthesized and investigated. Addition of 0.4 and 0.8 moles of Sr atoms into the PbS lattice has appreciably reduced the thermal conductivity from 2.2 W/mK to 0.43 W/mK for Sr0.4Pb0.6S composition. Temperature (T) dependence of thermoelectric (TE) properties PbS and and SrxPb(1-x)S nanocomposite material has been studied with in the temperature range of 300 K to 700 K. It is observed that there is reduction in the thermal conductivity of PbS alloy on addition of Sr that is mainly attributed to the scattering centres of Sr in the PbS matrix also the presence of the Sr also plays a role in the refinement of the PbS matrix.

Thermal transport and thermoelectric properties of beta-graphyne nanostructures.

PubMed

Ouyang, Tao; Hu, Ming

2014-06-20

Graphyne, an allotrope of graphene, is currently a hot topic in the carbon-based nanomaterials research community. Taking beta-graphyne as an example, we performed a comprehensive study of thermal transport and related thermoelectric properties by means of nonequilibrium Green's function (NEGF). Our simulation demonstrated that thermal conductance of beta-graphyne is only approximately 26% of that of the graphene counterpart and also shows evident anisotropy. Meanwhile, thermal conductance of armchair beta-graphyne nanoribbons (A-BGYNRs) presents abnormal stepwise width dependence. As for the thermoelectric property, we found that zigzag beta-graphyne nanoribbons (Z-BGYNRs) possess superior thermoelectric performance with figure of merit value achieving 0.5 at room temperature, as compared with graphene nanoribbons (~0.05). Aiming at obtaining a better thermoelectric coefficient, we also investigated Z-BGYNRs with geometric modulations. The results show that the thermoelectric performance can be enhanced dramatically (figure of merit exceeding 1.5 at room temperature), and such enhancement strongly depends on the width of the nanoribbons and location and quantity of geometric modulation. Our findings shed light on transport properties of beta-graphyne as high efficiency thermoelectrics. We anticipate that our simulation results could offer useful guidance for the design and fabrication of future thermoelectric devices.

Low-temperature thermoelectric properties of the electron-doped perovskites Sr1- x Ca x Ti1- y Nb y O3

NASA Astrophysics Data System (ADS)

Okuda, Tetsuji; Fukuyado, Junichi; Narikiyo, Kurahito; Akaki, Mitsuru; Kuwahara, Hideki

2013-08-01

We have investigated the thermoelectric (TE) properties for single crystals of the perovskites Sr1- x Ca x Ti1- y Nb y O3 for 0 ≤ x ≤ 0.4 and 0 ≤ y ≤ 0.03 at temperatures below room temperature (RT). We found that SrTi0.99Nb0.01O3 showed a large power factor at low temperatures ( PF = 50 µW/K2cm at 100 K ˜ 90 µW/K2cm at 50 K) and the largest dimensionless TE figure-ofmerit at temperatures below 40 K ( ZT ˜ 0.07) among the reported materials. Such a large low-temperature TE response around a carrier concentration of 1020 cm-3 is due to a distinct phonon drag effect. We also found that the Ca2+ substitution for Sr2+ increased the ZT at 300 K for Sr1- x Ca x Ti0.97Nb0.03O3 from 0.08 to 0.105. The enhancement of the ZT around RT originates both from a large reduction of a thermal conductivity due to a randomness introduced into the crystal structure and from an unexpected enhancement of a Seebeck coefficient.

Thermoelectric Polymers and their Elastic Aerogels.

PubMed

Khan, Zia Ullah; Edberg, Jesper; Hamedi, Mahiar Max; Gabrielsson, Roger; Granberg, Hjalmar; Wågberg, Lars; Engquist, Isak; Berggren, Magnus; Crispin, Xavier

2016-06-01

Electronically conducting polymers constitute an emerging class of materials for novel electronics, such as printed electronics and flexible electronics. Their properties have been further diversified to introduce elasticity, which has opened new possibility for "stretchable" electronics. Recent discoveries demonstrate that conducting polymers have thermoelectric properties with a low thermal conductivity, as well as tunable Seebeck coefficients - which is achieved by modulating their electrical conductivity via simple redox reactions. Using these thermoelectric properties, all-organic flexible thermoelectric devices, such as temperature sensors, heat flux sensors, and thermoelectric generators, are being developed. In this article we discuss the combination of the two emerging fields: stretchable electronics and polymer thermoelectrics. The combination of elastic and thermoelectric properties seems to be unique for conducting polymers, and difficult to achieve with inorganic thermoelectric materials. We introduce the basic concepts, and state of the art knowledge, about the thermoelectric properties of conducting polymers, and illustrate the use of elastic thermoelectric conducting polymer aerogels that could be employed as temperature and pressure sensors in an electronic-skin. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping.

PubMed

Kumar, S R Sarath; Barasheed, Abeer Z; Alshareef, H N

2013-08-14

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m(-1) K(-1), and the estimated figure of merit is 0.29 at 1000 K.

La 1−x Ca x MnO3 semiconducting nanostructures: morphology and thermoelectric properties

PubMed Central

2014-01-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−x Ca x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content. PMID:25206315

Thermoelectric properties of PEDOT nanowire/PEDOT hybrids.

PubMed

Zhang, Kun; Qiu, Jingjing; Wang, Shiren

2016-04-21

Freestanding poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires were synthesized by template-confined in situ polymerization, and then integrated into polystyrene sulfonate (PSS)-doped PEDOT and tosylate-doped PEDOT hosts, respectively. The hybrid morphologies were characterized by atomic force microscopy, indicating the homogeneous dispersion of PEDOT nanowires. The thermoelectric properties of the resultant hybrids were measured, and the power factor was found to be enhanced by 9-fold in comparison with PSS mixed with 5 vol% dimethyl sulfoxide while the low thermal conductivity was still maintained. Such a significant improvement could be attributed to the synergistic effects of interfacial energy filtering, component contributions, and changes of carrier concentrations in the host materials. Upon addition of 0.2 wt% PEDOT nanowires, the resultant composites demonstrated a power factor as high as 446.6 μW m(-1) K(-2) and the thermoelectric figure of merit could reach 0.44 at room temperature. The thermoelectric devices were investigated by using the PEDOT nanowire/PEDOT hybrid as a p-type leg and nitrogen-doped graphene as an n-type leg. The normalized power output was as high as ∼0.5 mW m(-2) for a temperature gradient of ΔT = 10.1 °C, indicating great potential for practical applications. These findings open up a new route towards high-performance organic thermoelectric materials and devices.

Micro-Thermoelectric Generation Modules Fabricated with Low-Cost Mechanical Machining Processes

NASA Astrophysics Data System (ADS)

Liu, Dawei; Jin, A. J.; Peng, Wenbo; Li, Qiming; Gao, Hu; Zhu, Lianjun; Li, Fu; Zhu, Zhixiang

2017-05-01

Micro/small-scale thermoelectric generation modules are able to produce continuous, noise-free and reliable electricity power using low temperature differences that widely exist in nature or industry. These advantages bring them great application prospects in the fields of remote monitoring, microelectronics/micro-electromechanical systems (MEMS), medical apparatus and smart management system, which often require a power source free of maintenance and vibration. In this work, a prototypical thermoelectric module (12 mm × 12 mm × 0.8 mm) with 15 pairs of micro-scale thermoelectric legs (0.2 mm in width and 0.6 mm in height for each leg) is fabricated using a low-cost mechanical machining process. In this process, cutting and polishing are the main methods for the preparation of thermoelectric pairs from commercial polycrystalline materials and for the fabrication of electrode patterns. The as-fabricated module is tested for its power generation properties with the hot side heated by an electrical heater and the cold side by cold air. With the heater temperature of 375 K, the thermoelectric potential is about 9.1 mV, the short circuit current is about 14.5 mA, and the maximum output power is about 32.8 μW. The finite element method is applied to analyze the heat transfer of the module during our test. The temperature difference and heat flux are simulated, according to which the output powers at different temperatures are calculated, and the result is relatively consistent compared to the test results.

Ballistic thermoelectric properties of nitrogenated holey graphene nanostructures

NASA Astrophysics Data System (ADS)

Cao, Wei; Xiao, Huaping; Ouyang, Tao; Zhong, Jianxin

2017-11-01

In this study, we theoretically investigate the ballistic thermoelectric performance of a new two-dimensional material, nitrogenated holey graphene (NHG), using nonequilibrium Green's function method. The calculations show that compared to graphene, such novel single atomic layer structure exhibits better thermoelectric performance. At room temperature, the stable hole (electron) thermoelectric figure of merit ( Z T ) could approach 0.75 (0.2) and 0.6 (0.2) for zigzag-edged (Z-NHGNRs) and armchair-edged NHGNRs (A-NHGNRs), respectively. To achieve better thermoelectric performance, the effect of geometric engineering (chevron-type nanoribbons and rhomboid quantum dot) on the electronic and phononic transport properties of Z-NHGNRs is further discussed. The results indicate that structure modulation is indeed a viable approach to enhance the thermoelectric properties (the figure of merit could exceed 1.5 and 1.3 for the chevron-type and rhomboid quantum dot system, respectively). On analyzing the transport properties, such improvement on the figure of merit is mainly attributed to the increased Seebeck coefficient and reduced thermal conductance (including both electronic and phononic contributions). Our findings presented in this paper qualify NHG as a promising thermoelectric material and provide theoretical guidance for fabricating the outstanding thermoelectric devices.

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

NASA Technical Reports Server (NTRS)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Thermoelectric refrigerator having improved temperature stabilization means

DOEpatents

Falco, Charles M.

1982-01-01

A control system for thermoelectric refrigerators is disclosed. The thermoelectric refrigerator includes at least one thermoelectric element that undergoes a first order change at a predetermined critical temperature. The element functions as a thermoelectric refrigerator element above the critical temperature, but discontinuously ceases to function as a thermoelectric refrigerator element below the critical temperature. One example of such an arrangement includes thermoelectric refrigerator elements which are superconductors. The transition temperature of one of the superconductor elements is selected as the temperature control point of the refrigerator. When the refrigerator attempts to cool below the point, the metals become superconductors losing their ability to perform as a thermoelectric refrigerator. An extremely accurate, first-order control is realized.

Analysis of thermoelectric properties of high-temperature complex alloys of nickel-base, iron-base and cobalt-base groups

NASA Technical Reports Server (NTRS)

Holanda, R.

1984-01-01

The thermoelectric properties alloys of the nickel-base, iron-base, and cobalt-base groups containing from 1% to 25% 106 chromium were compared and correlated with the following material characteristics: atomic percent of the principle alloy constituent; ratio of concentration of two constituents; alloy physical property (electrical resistivity); alloy phase structure (percent precipitate or percent hardener content); alloy electronic structure (electron concentration). For solid-solution-type alloys the most consistent correlation was obtained with electron concentration, for precipitation-hardenable alloys of the nickel-base superalloy group, the thermoelectric potential correlated with hardener content in the alloy structure. For solid-solution-type alloys, no problems were found with thermoelectric stability to 1000; for precipitation-hardenable alloys, thermoelectric stability was dependent on phase stability. The effects of the compositional range of alloy constituents on temperature measurement uncertainty are discussed.

Effect of High Pressure and Temperature on Structural, Thermodynamic and Thermoelectric Properties of Quaternary CoFeCrAl Alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

Employing first-principles based on density functional theory we have investigated the structural, magneto-electronic, thermoelectric and thermodynamic properties of quaternary Heusler alloy CoFeCrAl. Electronic band structure displays that CoFeCrAl is an indirect band gap semiconductor in spin-down state with the band gap value of 0.65 eV. Elastic constants reveal CoFeCrAl is a mechanically stable structure having a Debye temperature of 648 K along with a high melting temperature (2130 K). The thermoelectric properties in the temperature range 50-800 K have been calculated. CoFeCrAl possesses a high Seebeck coefficient of - 46 μV/K at room temperature along with the huge power factor of ˜ 4.8 (1012 μW cm-1 K-2 s-1) which maximizes the figure-of-merit up to ˜ 0.75 at 800 K temperature and suggesting CoFeCrAl as potential thermoelectric material. The effect of high pressure and high temperature on the thermal expansion, Grüneisen parameter and heat capacity were also studied by using the quasi-harmonic Debye model.

Thermoelectric properties of 80 a/o Si-20 a/o Ge alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1974-01-01

This paper discusses the time and temperature dependence of the thermoelectric properties of n- and p-type 80 at. % Si-20 at. % Ge alloy. It is shown that the time-temperature behavior of the properties of both polarity types of this alloy can be described by means of a diffusion-limited dopant precipitation model due to Lifshitz and Slyozov (1961). An experimental program for the determination of the long-term behavior of the properties of the alloy is described in terms of the Lifshitz-Slyozov model, and the thermoelectric properties of the alloy are given for temperatures in the range from room temperature to 1000 C as a function of time up to and including twelve years. The data given for the p-type alloy represent the first time-dependent thermoelectric property data ever published for the p-type silicon-germanium alloys.

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x

DOE PAGES

Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram; ...

2016-11-04

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO 2-x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hwasoo; Han, Su Jung; Seshadri, Ramachandran Chidambaram

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultantmore » deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3 S m -1, relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. Lastly, the results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.« less

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2-x.

PubMed

Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay

2016-11-04

The thermoelectric properties of sub-stoichiometric TiO 2-x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO 2-x deposits are formed through in-situ reaction of the TiO 1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO 2-x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of -230 μV K -1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 10 3  S m -1 , relatively low thermal conductivity in the range of 1.5 to 2 W m -1 K -1 resulting in power factor of 2.9 μW cm -1 K -2 . The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures.

Highly Enhanced Thermoelectric Properties of Bi/Bi2S3 Nanocomposites.

PubMed

Ge, Zhen-Hua; Qin, Peng; He, DongSheng; Chong, Xiaoyu; Feng, Dan; Ji, Yi-Hong; Feng, Jing; He, Jiaqing

2017-02-08

Bismuth sulfide (Bi 2 S 3 ) has been of high interest for thermoelectric applications due to the high abundance of sulfur on Earth. However, the low electrical conductivity of pristine Bi 2 S 3 results in a low figure of merit (ZT). In this work, Bi 2 S 3 @Bi core-shell nanowires with different Bi shell thicknesses were prepared by a hydrothermal method. The core-shell nanowires were densified to Bi/Bi 2 S 3 nanocomposite by spark plasma sintering (SPS), and the structure of the nanowire was maintained as the nanocomposite due to rapid SPS processing and low sintering temperature. The thermoelectric properties of bulk samples were investigated. The electrical conductivity of a bulk sample after sintering at 673 K for 5 min using Bi 2 S 3 @Bi nanowire powders prepared by treating Bi 2 S 3 nanowires in a hydrazine solution for 3 h is 3 orders of magnitude greater than that of a pristine Bi 2 S 3 sample. The nanocomposite possessed the highest ZT value of 0.36 at 623 K. This represents a new strategy for densifying core-shell powders to enhance their thermoelectric properties.

Solvent-Based Synthesis of Nano-Bi0.85Sb0.15 for Low-Temperature Thermoelectric Applications

NASA Astrophysics Data System (ADS)

Kaspar, K.; Fritsch, K.; Habicht, K.; Willenberg, B.; Hillebrecht, H.

2017-01-01

In this study we show a preparation method for nanostructured Bi0.85Sb0.15 powders via a chemical reduction route in a polyol medium, yielding material with particle sizes of 20-150 nm in scalable amounts. The powders were consolidated by spark plasma sintering (SPS) in order to maintain the nanostructure. To investigate influence of the sinter process, the powders were characterized by x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and scanning electron microscopy (SEM) measurements before and after SPS. Transport properties, Seebeck effect, and thermal conductivity were determined in the low temperature range below 300 K. The samples showed excellent thermal conductivity of 2.3-2.6 W/m × K at 300 K and Seebeck coefficients from -97 μV/K to -107 μV/K at 300 K with a maximum of -141 μV/K at 110 K, thus leading to ZT values of up to 0.31 at room temperature. The results show that Bi-Sb-alloys are promising materials for low-temperature applications. Our wet chemical approach gives access to scalable amounts of nano-material with increased homogeneity and good thermoelectric properties after SPS.

Contrastive thermoelectric properties of strained SnSe crystals from the first-principles calculations

NASA Astrophysics Data System (ADS)

Tang, Yu; Cheng, Feng; Li, Decong; Deng, Shuping; Chen, Zhong; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Deng, Shukang

2018-06-01

SnSe is a promising thermoelectric material with a record high dimensionless figure of merit ZT at high temperature ∼923 K. However, the ZT values for low-Temperature Pnma phase SnSe are just 0.1-0.9. Here, we use First-principle combine with Boltzmann transport theory methods to study the effect of tensile and compressible strain on the thermoelectric transport properties. The power factor of SnSe with -4% strain have a large boost along b and c directions of 7.7 and 3.9 μW cm-1 K-2, respectively, which are 2.5 and 2 times as large as those pristine SnSe. The charge density distributions reveal that the overlap of wave function has significant change due to the changed bond lengths and bond angles under different strain, which lead to the change of band gap and band dispersion. Our work provides a new effective strategy to enhance the thermoelectric properties of materials.

Yb14MgBi11: structure, thermoelectric properties and the effect of the structure on low lattice thermal conductivity.

PubMed

Hu, Yufei; Kauzlarich, Susan M

2017-03-21

Zintl phases Yb 14 MnSb 11 and Yb 14 MgSb 11 , which share the same complex structure type, have been demonstrated as the best p-type thermoelectric materials for the high temperature region (800-1200 K). A new iso-structural compound, Yb 14 MgBi 11 , was synthesized in order to investigate the structure and thermoelectric properties of the Bi analogs. Yb 14 MgBi 11 crystallizes in the Ca 14 AlSb 11 structure-type with the space group I4 1 /acd [a = 16.974(2) Å, c = 22.399(4) Å, V = 6454(2) Å 3 , R 1 /wR 2 = 0.0238/0.0475]. The structure follows the previous description of this structure type and the trend observed in previous analogs. Thermoelectric properties of Yb 14 MgBi 11 are measured together with Yb 14 MnBi 11 and both compounds are metallic. Compared to Yb 14 MgSb 11 , Yb 14 MgBi 11 has a higher carrier concentration with a similar mobility and effective mass. The lattice thermal conductivity of Yb 14 MgBi 11 is extremely low, which is as low as 0.16-0.36 W(mK) -1 . The zT values of Yb 14 MgBi 11 and Yb 14 MnBi 11 reach 0.2 at 875 K.

Temperature and pressure effects on elastic properties of relaxor ferroelectrics and thermoelectrics: A resonant ultrasound spectroscopy study

NASA Astrophysics Data System (ADS)

Tennakoon, Sumudu P.

Relaxor ferroelectric lead magnesium niobate-lead titanate (PMN-PT) material exhibits exceptional electromechanical properties. The material undergoes a series of structural phase transitions with changes in temperature and the chemical composition. The work covered in this dissertation seek to gain insight into the phase diagram of PMN-PT using temperature and pressure dependence of the elastic properties. Single crystal PMN-PT with a composition near morphotropic phase boundary (MPB) was investigated using a resonant ultrasound spectroscopy (RUS) methodologies in the temperature range of 293 K - 800 K and the pressure range from near vacuum to 3.4 MPa. At atmospheric pressure, significantly high acoustic attenuation of PMN-PT is observed at temperatures below 400 K. A strong stiffening is observed in the temperature range of 400 K - 673 K, followed by a gradual softening at higher temperatures. With varying pressure, an increased pressure sensitivity of the elastic properties of PMN-PT is observed at the temperatures in the stiffening phase. Elastic behavior at elevated temperatures and pressures were studied for correlations with the ferroelectric domains at temperatures below the Curie temperature (TC), the locally polarized nano-regions, and an existence of pseudo-cubic crystalline at higher temperatures between (TC and TB). Thermoelectric lanthanum tellurides and skutterudites are being investigated by NASA's Jet Propulsion Laboratory for advanced thermoelectric generates (TEGs). Effects of nickel (Ni) doping on elastic properties of lanthanum tellurides at elevated temperatures were investigated in the temperature range of 293 K - 800 K. A linear stiffening was observed with increasing the Ni content in the material. Elastic properties of p-type and n-type bismuth-based skutterudites were investigated in the temperature range of 293 K - 723 K. Elastic properties of rare-earth doped strontium titanate were also investigated in the temperature range of 293 K

Lead telluride as a thermoelectric material for thermoelectric power generation

NASA Astrophysics Data System (ADS)

Dughaish, Z. H.

2002-09-01

The specialized applications of thermoelectric generators are very successful and have motivated a search for materials with an improved figure of merit Z, and also for materials which operate at elevated temperatures. Lead telluride, PbTe, is an intermediate thermoelectric power generator. Its maximum operating temperature is 900 K. PbTe has a high melting point, good chemical stability, low vapor pressure and good chemical strength in addition to high figure of merit Z. Recently, research in thermoelectricity aims to obtain new improved materials for autonomous sources of electrical power in specialized medical, terrestial and space applications and to obtain an unconventional energy source after the oil crises of 1974. Although the efficiency of thermoelectric generators is rather low, typically ∼5%, the other advantages, such as compactness, silent, reliability, long life, and long period of operation without attention, led to a wide range of applications. PbTe thermoelectric generators have been widely used by the US army, in space crafts to provide onboard power, and in pacemakers batteries. The general physical properties of lead telluride and factors affecting the figure of merit have been reviewed. Various possibilities of improving the figure of merit of the material have been given, including effect of grain size on reducing the lattice thermal conductivity λL. Comparison of some transport properties of lead telluride with other thermoelectric materials and procedures of preparing compacts with transport properties very close to the single crystal values from PbTe powder by cold and hot-pressing techniques are discussed.

The Synthesis and Thermoelectric Properties of p-Type Li1- x NbO2-Based Compounds

NASA Astrophysics Data System (ADS)

Rahman, Jamil Ur; Meang, Eun-Ji; Van Nguyen, Du; Seo, Won-Seon; Hussain, Ali; Kim, Myong Ho; Lee, Soonil

2017-03-01

We investigated the thermoelectric (TE) properties of a p-type oxide material (Li1- x NbO2, with x = 0-0.6). The composition was synthesized via a solid-state reaction method under a reducing atmosphere. The charge transport properties were determined through the electrical conductivity and Seebeck coefficient measurements. The electrical conductivity was non-monotonically varied with x value and showed metallic behavior with increased temperature and above 650 K temperature independent behavior dominated by extrinsic conduction. On the other hand, the Seebeck coefficient was increased with an increase in the temperature, and decreased gradually with an increase in the Li vacancy concentration by both synthesis and gradual phase transition to a Li-rich Li3NbO4 phase with temperature and appeared as an n-type TE at x = 0.6 under high temperatures, which was attributed to an Nb substitution into the Li site. The thermal conductivity was monotonically reduced with the increase in temperature due to the cation disorder defects and second phases. The Li vacancy induced Li1- x NbO2-based compounds under low oxygen partial pressure show promise as a candidate p-type material for thermoelectric applications, particularly for co-processing with n-type oxide thermoelectric materials fabricated under conditions of low oxygen partial pressure.

Recent Development of Thermoelectric Polymers and Composites.

PubMed

Yao, Hongyan; Fan, Zeng; Cheng, Hanlin; Guan, Xin; Wang, Chen; Sun, Kuan; Ouyang, Jianyong

2018-03-01

Thermoelectric materials can be used as the active materials in thermoelectric generators and as Peltier coolers for direct energy conversion between heat and electricity. Apart from inorganic thermoelectric materials, thermoelectric polymers have been receiving great attention due to their unique advantages including low cost, high mechanical flexibility, light weight, low or no toxicity, and intrinsically low thermal conductivity. The power factor of thermoelectric polymers has been continuously rising, and the highest ZT value is more than 0.25 at room temperature. The power factor can be further improved by forming composites with nanomaterials. This article provides a review of recent developments on thermoelectric polymers and polymer composites. It focuses on the relationship between thermoelectric properties and the materials structure, including chemical structure, microstructure, dopants, and doping levels. Their thermoelectric properties can be further improved to be comparable to inorganic counterparts in the near future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric properties of in-situ plasma spray synthesized sub-stoichiometry TiO2−x

PubMed Central

Lee, Hwasoo; Han, Su Jung; Chidambaram Seshadri, Ramachandran; Sampath, Sanjay

2016-01-01

The thermoelectric properties of sub-stoichiometric TiO2−x deposits produced by cascaded-plasma spray process are investigated from room-temperature to 750 K. Sub-stoichiometric TiO2−x deposits are formed through in-situ reaction of the TiO1.9 within the high temperature plasma flame and manipulated through introduction of varying amounts of hydrogen in the plasma. Although the TiO2−x particles experience reduction within plasma, it can also re-oxidize through interaction with the surrounding ambient atmosphere, resulting in a complex interplay between process conditions and stoichiometry. The deposits predominantly contain rutile phase with presence of Magneli phases especially under significantly reducing plasma conditions. The resultant deposits show sensitivity to thermoelectric properties and under certain optimal conditions repeatedly show Seebeck coefficients reaching values of −230 μV K−1 at temperatures of 750 K while providing an electrical conductivity of 5.48 × 103 S m−1, relatively low thermal conductivity in the range of 1.5 to 2 W m−1 K−1 resulting in power factor of 2.9 μW cm−1 K−2. The resultant maximum thermoelectric figure of merit value reached 0.132 under these optimal conditions. The results point to a potential pathway for a large-scale fabrication of low-cost oxide based thermoelectric with potential applicability at moderate to high temperatures. PMID:27811954

Intermediate Valence Tuning and Seebeck Coefficient Optimization in Yb-based Low-Temperature Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Lehr, Gloria; Morelli, Donald; Jin, Hyungyu; Heremans, Joseph

2014-03-01

Several Yb-based intermediate valence compounds have unique thermoelectric properties at low temperatures. These materials are interesting to study for niche applications such as cryogenic Peltier cooling of infrared sensors on satellites. Elements of different sizes, which form isostructural compounds, are used to form solid solutions creating a chemical pressure (smaller atoms - Sc) or relaxation (larger atoms - La) to alter the volume of the unit cell and thereby manipulate the average Yb valence. Magnetic susceptibility measurements show a strong correlation between the Seebeck coefficient and the ratio of trivalent to divalent Yb in these compounds. Two different Yb-based solid solution systems, Yb1-xScxAl2 and Yb1-xLaxCu2Si2, demonstrate that the concentration of Yb can be used to tune both the magnitude of the Seebeck coefficient as well as the temperature at which its absolute maximum occurs. This work is supported by Michigan State University and AFOSR-MURI ``Cryogenic Peltier Cooling'' Contract #FA9550-10-1-0533.

Thermoelectric properties of topological insulator BaSn2

NASA Astrophysics Data System (ADS)

Guo, San-Dong; Qiu, Liang

2017-01-01

Recently, \\text{BaS}{{\\text{n}}2} has been predicted to be a strong topological insulator by the first-principle calculations. It is well known that topological insulators have a close connection to thermoelectric materials, such as the \\text{B}{{\\text{i}}2}\\text{T}{{\\text{e}}3} family. In this work, we investigate thermoelectric properties of \\text{BaS}{{\\text{n}}2} by the first-principles calculations combined with the Boltzmann transport theory. The electronic part is carried out by a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC), while the phonon part is performed using a generalized gradient approximation (GGA). It was found that the electronic transport coefficients between the in-plane and cross-plane directions showed strong anisotropy, while lattice-lattice thermal conductivities demonstrated almost complete isotropy. Calculated results revealed a very low lattice thermal conductivity for \\text{BaS}{{\\text{n}}2} , and the corresponding average lattice thermal conductivity at room temperature is 1.69 \\text{W}~{{\\text{m}}-1}~{{\\text{K}}-1} , which is comparable or lower than those of lead chalcogenides and bismuth-tellurium systems as classic thermoelectric materials. Due to the complicated scattering mechanism, calculating the scattering time τ is challenging. By using an empirical τ ={{10}-14} s, the n-type figure of merit ZT is greater than 0.40 in wide temperature ranges. Experimentally, it is possible to attain better thermoelectric performance by strain or tuning size parameters. This work indicates that \\text{BaS}{{\\text{n}}2} may be a potential thermoelectric material, which can stimulate further theoretical and experimental work.

Thermoelectric properties and thermal stability of layered chalcogenides, TlScQ2, Q = Se, Te.

PubMed

Aswathy, Vijayakumar Sajitha; Sankar, Cheriyedath Raj; Varma, Manoj Raama; Assoud, Abdeljalil; Bieringer, Mario; Kleinke, Holger

2017-12-12

A few thallium based layered chalcogenides of α-NaFeO 2 structure-type are known for their excellent thermoelectric properties and interesting topological insulator nature. TlScQ 2 belongs to this structural category. In the present work, we have studied the electronic structure, electrical and thermal transport properties and thermal stability of the title compounds within the temperature range 2-600 K. Density functional theory (DFT) predicts a metallic nature for TlScTe 2 and a semiconducting nature for TlScSe 2 . DFT calculations also show significant lowering of energies of frontier bands upon inclusion of spin-orbit coupling contribution in the calculation. The electronic structure also shows the simultaneous occurrence of holes and electron pockets for the telluride. Experiments reveal that the telluride shows a semi-metallic behaviour whereas the selenide is a semiconductor. The thermoelectric properties for both the materials were also investigated. Both these materials possess very low thermal conductivity which is an attractive feature for thermoelectrics. However, they lack thermal stability and decompose upon warming above room temperature, as evidenced from high temperature powder X-ray diffraction and thermal analysis.

The thermoelectric properties of strongly correlated systems

NASA Astrophysics Data System (ADS)

Cai, Jianwei

Strongly correlated systems are among the most interesting and complicated systems in physics. Large Seebeck coefficients are found in some of these systems, which highlight the possibility for thermoelectric applications. In this thesis, we study the thermoelectric properties of these strongly correlated systems with various methods. We derived analytic formulas for the resistivity and Seebeck coefficient of the periodic Anderson model based on the dynamic mean field theory. These formulas were possible as the self energy of the single impurity Anderson model could be given by an analytic ansatz derived from experiments and numerical calculations instead of complicated numerical calculations. The results show good agreement with the experimental data of rare-earth compound in a restricted temperature range. These formulas help to understand the properties of periodic Anderson model. Based on the study of rare-earth compounds, we proposed a design for the thermoelectric meta-material. This manmade material is made of quantum dots linked by conducting linkers. The quantum dots act as the rare-earth atoms with heavier mass. We set up a model similar to the periodic Anderson model for this new material. The new model was studied with the perturbation theory for energy bands. The dynamic mean field theory with numerical renormalization group as the impurity solver was used to study the transport properties. With these studies, we confirmed the improved thermoelectric properties of the designed material.

Thermoelectricity in atom-sized junctions at room temperatures

PubMed Central

Tsutsui, Makusu; Morikawa, Takanori; Arima, Akihide; Taniguchi, Masateru

2013-01-01

Atomic and molecular junctions are an emerging class of thermoelectric materials that exploit quantum confinement effects to obtain an enhanced figure of merit. An important feature in such nanoscale systems is that the electron and heat transport become highly sensitive to the atomic configurations. Here we report the characterization of geometry-sensitive thermoelectricity in atom-sized junctions at room temperatures. We measured the electrical conductance and thermoelectric power of gold nanocontacts simultaneously down to the single atom size. We found junction conductance dependent thermoelectric voltage oscillations with period 2e2/h. We also observed quantum suppression of thermovoltage fluctuations in fully-transparent contacts. These quantum confinement effects appeared only statistically due to the geometry-sensitive nature of thermoelectricity in the atom-sized junctions. The present method can be applied to various nanomaterials including single-molecules or nanoparticles and thus may be used as a useful platform for developing low-dimensional thermoelectric building blocks. PMID:24270238

First-principles study on doping and temperature dependence of thermoelectric property of Bi{sub 2}S{sub 3} thermoelectric material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Donglin; Hu, Chenguo, E-mail: hucg@cqu.edu.cn; Zhang, Cuiling

2013-05-15

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10{sup 19} cm{sup −3}, the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi{sub 2}S{sub 3} depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10{sup 19} cm{sup −3}, the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value.more » ► By doping and temperature tuning, Bi{sub 2}S{sub 3} is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi{sub 2}S{sub 3} are investigated. The electron and hole effective mass of Bi{sub 2}S{sub 3} is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi{sub 2}S{sub 3} crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi{sub 2}S{sub 3}, the optimal doping concentration is found in the range of (1.0–5.0) × 10{sup 19} cm{sup −3}, in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant.« less

Modulation of charge transport properties in poly(3,4-ethylenedioxythiophene) nanocomposites for thermoelectric applications

NASA Astrophysics Data System (ADS)

Galliani, Daniela; Battiston, Simone; Ruffo, Riccardo; Trabattoni, Silvia; Narducci, Dario

2018-01-01

Conjugated polymer poly(3,4-dioxyethylenthiofene) (PEDOT) has recently gained attention for room-temperature thermoelectric applications due to its low cost, safety and the possibility of easy processing. This makes it an interesting prospective alternative to tellurides commonly used around room temperature. Still, low thermoelectric efficiencies of polymers might be more easily increased, were a model of its transport properties available. The aim of this paper is to validate a model recently reported, making use of the concept of transport energy to frame the onset of transport properties reported over the last few years in the literature. To this aim, PEDOT and PEDOT-based nanocomposites embedding CuO nanoplatelets were prepared and analysed. We found that the model adequately fits the trends observed in pure PEDOT and in its nanocomposites. Transport and Fermi energy were verified to depend on the polymer oxidation level only,while the transport coefficient was found to be sensitive to PEDOT stacking and was modulated by the introduction of CuO nanoplatelets.

An Experimental Investigation towards Improvement of Thermoelectric Properties of Strontium Titanate Ceramics

NASA Astrophysics Data System (ADS)

Mehdizadeh Dehkordi, Arash

The direct energy conversion between heat and electricity based on thermoelectric effects is a topic of long-standing interest in condensed matter materials science. Experimental and theoretical investigations in order to understand the mechanisms involved and to improve the materials properties and conversion efficiency have been ongoing for more than half a century. While significant achievements have been accomplished in improving the properties of conventional heavy element based materials (such as Bi2Te 3 and PbTe) as well as the discovery of new materials systems for the close-to-room temperature and intermediate temperatures, high-temperature applications of thermoelectrics is still limited to one materials system, namely SiGe. Recently, oxides have exhibited great potential to be investigated for high-temperature thermoelectric power generation. The objective of this dissertation is to synthesize and investigate both electronic and thermal transport in strontium titanate (SrTiO3) ceramics in order to experimentally realize its potential and to ultimately investigate the possibility of further improvement of the thermoelectric performance of this perovskite oxide for mid- to high temperature applications. Developing a synthesis strategy and tuning various synthesis parameters to benefit the thermoelectric transport form the foundation of this study. It is worth mentioning that the results of this study has been employed to prepare targets for pulsed-laser deposition (PLD) to study the thermoelectric properties of corresponding thin films and superlattice structures at Dr. Husam Alshareef's group at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Considering the broad range of functionality of SrTiO3, the findings of this work will surely benefit other fields of research and application of this functional oxide such as photoluminescence, ferroelectricity or mixed-ionic electronic conductivity. This dissertation will ultimately

High Performance Oxides-Based Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Ren, Guangkun; Lan, Jinle; Zeng, Chengcheng; Liu, Yaochun; Zhan, Bin; Butt, Sajid; Lin, Yuan-Hua; Nan, Ce-Wen

2015-01-01

Thermoelectric materials have attracted much attention due to their applications in waste-heat recovery, power generation, and solid state cooling. In comparison with thermoelectric alloys, oxide semiconductors, which are thermally and chemically stable in air at high temperature, are regarded as the candidates for high-temperature thermoelectric applications. However, their figure-of-merit ZT value has remained low, around 0.1-0.4 for more than 20 years. The poor performance in oxides is ascribed to the low electrical conductivity and high thermal conductivity. Since the electrical transport properties in these thermoelectric oxides are strongly correlated, it is difficult to improve both the thermoelectric power and electrical conductivity simultaneously by conventional methods. This review summarizes recent progresses on high-performance oxide-based thermoelectric bulk-materials including n-type ZnO, SrTiO3, and In2O3, and p-type Ca3Co4O9, BiCuSeO, and NiO, enhanced by heavy-element doping, band engineering and nanostructuring.

Silicon-Based Thermoelectrics: Harvesting Low Quality Heat Using Economically Printed Flexible Nanostructured Stacked Thermoelectric Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-03-01

Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to ourmore » current annual electricity production.« less

Thermoelectric properties of SnSe1-xSx(0

NASA Astrophysics Data System (ADS)

Nguyen, Thi Minh Hai; Duong, Anh Tuan; Duvjir, Ganbat; Trinh, Thi Ly; Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

Tin selenide (SnSe), a p-type semiconductor, has attracted many attention due to its excellent thermoelectric efficiency, i.e., ZT = 2.6 along the b-axis of its high temperature phase. This issue has renewed interests in thermoelectric properties of the materials which adopted the same layered structure as SnSe, such as SnS, GeS, and GeSe. Among these compounds, tin (II) sulfide (SnS) is exceptionally attractive because of its natural abundance and low toxicity. However, the experimental results show that SnS has possessed a small value of the figure of merit. To optimize the thermoelectric performance of SnS, making solid solution is a potential way. That is our motivation for the investigation of SnSe1-xSx single crystals' thermoelectric properties. In this study, SnSe1-xSx (0 temperature gradient method. The crystal structure was investigated by SEM and XRD, which indicated that fabricated SnSe1-xSx single crystals have layered structure with lattice constants change gradually following Vegard's law. Transport properties were synthesized by physical properties measurement system (PPMS). We observed that for x = 0.2, SnSe0.8S0.2, electrical resistivity and Seebeck coefficient were 0.52 Ω . cm and 639.36 μVK-1 at 270 K, respectively, which resulted in the power factor of 0.78 μWK-2cm-1. Furthermore, we will discuss about the thermal conductivity and microscopic surface structure of these samples.

Theoretical investigation of thermoelectric and elastic properties of intermetallic compounds ScTM (TM = Cu, Ag, Au and Pd)

NASA Astrophysics Data System (ADS)

Iqbal, R.; Bilal, M.; Jalali-Asadabadi, S.; Rahnamaye Aliabad, H. A.; Ahmad, Iftikhar

2018-01-01

In this paper, we explore the structural, electronic, thermoelectric and elastic properties of intermetallic compounds ScTM (TM = Cu, Ag, Au and Pd) using density functional theory. The produced results show high values of Seebeck coefficients and electrical conductivity for these materials. High power factor for these materials at room-temperature shows that these materials may be beneficial for low-temperature thermoelectric devices and alternative energy sources. Furthermore, elastic properties of these compounds are also calculated, which are used to evaluate their mechanical properties. The Cauchy’s pressure and B/G ratio figure out that these compounds are ductile in nature. The calculated results also predict that these compounds are stable against deforming force.

Structural, transport and thermoelectric properties of Nb-doped CaLaMnO perovskite

NASA Astrophysics Data System (ADS)

Villa, J. I.; Rodríguez, J. E.

2014-12-01

Poly-crystalline perovskite-type (CaLaMnO) Ca0.95La0.05Mn1-xNbxO3 (0.0 ≤ x ≤ 0.10) was synthesized using the conventional solid-state reaction method. Structural and morphological properties were studied by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM), respectively. Their transport and thermoelectric properties were studied from electrical resistivity ρ(T) and Seebeck coefficient S(T) measurements as a function of temperature and niobium content. The Rietveld analysis revealed a compound with orthorhombic structure, where their lattice parameters increase with the niobium content which is given by a distortion in octahedra MnO6. Electrical resistivity exhibits a semiconducting-like behavior, for low niobium contents (Nb ≤ 0.03) the magnitude of the electrical resistivity decreases, reaching minimum values close to 0.1 Ω - cm. Seebeck coefficient is negative in all studied temperature range. The temperature behavior of S(T) is interpreted in terms of variable range hopping (VRH) and Heikes model. From ρ(T) and S(T) measurements it was possible to calculate the thermoelectric power factor (PF), which reaches maximum values around 0.4 μW /K2 -cm. These values make these ceramics promising electronic thermoelectric materials.

Optimizing the Carrier Density and Thermoelectric Properties of Sb2Te3 Films by Using the Growth Temperature

NASA Astrophysics Data System (ADS)

Thiet, Duong Van; Quang, Nguyen Van; Hai, Nguyen Thi Minh; Huong, Nguyen Thi; Cho, Sunglae; Tuan, Duong Anh; Dung, Dang Duc; Tam, Tran Van

2018-04-01

In this work, we report on the structural and thermoelectric properties of Sb2Te3 films deposited on GaSb(111) substrates by using molecular beam epitaxy. The effects of the growth temperature on the microstructure and thermoelectric properties of the films were investigated. The results show that Sb2Te3 films grow on GaSb(111) along (00l) axis normal to the substrate and have a hexagonal structure with a layer-by-layer growth mode in growth temperature range from 200 to 250 °C while at 175 and 300 °C, the films show an island growth mode. Te and Sb2Te3 phases coexist at a growth temperature of 175 °C. The films exhibit a metallic behavior for growth temperatures below 250 °C and a semiconductor behavior at 300 °C. By changing growth temperature, we were able to vary the carrier density from 9.96×1018 to 4.55×1019 cm -3. At room temperature, the Seebeck coefficients are 110, 146, and 138 μV/K for growth temperatures of 175, 200 and 250 °C, respectively, and a large value of the power factor 61.67 μW/cm-K2 is achieved for the film grown at 250 °C.

Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P.C.

First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculatedmore » the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here. - Highlights: • Electronic band structure and chemical bonding. • Single crystalline elastic constants and poly crystalline elastic moduli. • Thermoelectric properties of zintl phase. • Lattice dynamics and phonon density of states.« less

Thermoelectric transport properties of Ti doped/adsorbed monolayer blue phosphorene.

PubMed

Zhu, Lin; Li, Bowen; Yao, Kailun

2018-08-10

Thermoelectric transport properties of Ti doped or adsorbed monolayer blue phosphorene are investigated by density functional theory combined with the nonequilibrium Green's function formalism. The thermal giant magnetoresistance and a nearly 100% spin polarization which solely relies on the temperature gradient of electrodes without bias or gate voltage are observed. Moreover, the spin Seebeck effect is also found. Furthermore, taking into account the electronic and phonon dispersion, the thermoelectric merit for Ti doping in the monolayer blue phosphorene at room temperature is also studied, the maximum value of thermoelectric merit can reach 1.01 near the Fermi level. The results indicate that Ti doped or adsorbed monolayer blue phosphorene has potential application in both spintronics and spin caloritronics.

Thermoelectric Properties of Mg2Si0.995Sb0.005 Prepared by the High-Pressure High-Temperature Method

NASA Astrophysics Data System (ADS)

Li, Jialiang; Chen, Gang; Duan, Bo; Zhu, Yaju; Hu, Xiaojun; Zhai, Pengcheng; Li, Peng

2017-05-01

Mg2Si0.995Sb0.005 compound was prepared by the high-pressure high-temperature (HPHT) method. The simultaneous synthesis and consolidation in one step could be completed in <15 min. The effects of pressure and temperature on the thermoelectric properties of Mg2Si0.995Sb0.005 were analyzed in this work. With the pressure and temperature increasing, the electrical conductivity rises markedly, while the Seebeck coefficient changes slightly, which results in significant enhancement of the power factor. The Mg2Si0.995Sb0.005 sample prepared under the condition of 1073 K and 2 GPa achieves the highest power factor of ˜2.12 × 10-3 W m-1 K-2 at 575 K. As the sample prepared at 973 K and 2 GPa retains a lower thermal conductivity, it obtains the highest thermoelectric figure-of-merit ZT ˜0.62 at 800 K. In conclusion, the HPHT method can serve as a route to prepare Sb-doped Mg2Si thermoelectric materials efficiently.

Low-temperature thermoelectric, galvanomagnetic, and thermodynamic properties of the type-I clathrate Ba8AuxSi46-x

NASA Astrophysics Data System (ADS)

Aydemir, U.; Candolfi, C.; Ormeci, A.; Oztan, Y.; Baitinger, M.; Oeschler, N.; Steglich, F.; Grin, Yu.

2011-11-01

Polycrystalline samples of the clathrate Ba8AuxSi46-x were synthesized for 0.2 ⩽ x ⩽ 10. The homogeneity range of the type-I clathrate phase was determined to be 3.63 ⩽ x ⩽ 6.10 after annealing at 900 °C, while a lower Au concentration (x ≈ 2.2) was obtained by steel-quenching. Quasisingle phase materials were obtained for 4.10 ⩽ x ⩽ 6.10. In this composition range, thermoelectric properties, including electrical resistivity, thermopower, and thermal conductivity, were investigated between 2 and 350 K. These experiments were complemented by low-temperature specific heat and Hall-effect measurements (2-300 K). First-principles calculations were carried out to determine the evolution of the electronic structure as a function of x. Both theoretical and experimental results evidence a progressive evolution, with the Au content, from a metallic-like behavior towards a highly doped semiconducting state which develops around x = 5.43. At this concentration, a crossover from n- to p-type conduction occurs, suggesting that the present system satisfies the Zintl-Klemm concept, which predicts a transition at x = 5.33. This crossover is traced by Hall-effect data indicating a dominant electronlike response for x ⩽ 5.43, which turns into a holelike signal at higher x values. Analysis of the data based on a single-parabolic-band model under the assumption of a single scattering mechanism of the charge carriers proved to adequately describe the transport properties in the compositional range investigated. Interestingly, the temperature dependence of the lattice thermal conductivity is strongly influenced by the Au concentration: the typical behavior of crystalline insulators in the n-type compounds evolves into a glasslike dependence in the p-type samples. The series Ba8AuxSi46-x thus provides an excellent testing ground for the interplay between crystal structure, electronic properties, and lattice thermal conductivity in type-I clathrates.

Thermoelectric properties of non-stoichiometric lanthanum sulfides

NASA Technical Reports Server (NTRS)

Shapiro, E.; Danielson, L. R.

1983-01-01

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 C. The non-stoichiometric lanthanum sulfides (LaS(x), where x is in the range 1.33-1.50) appear to possess the most favorable thermoelectric properties. The Seebeck coefficient and resistivity vary significantly with composition, so that an optimum value of alpha sq/rho (where alpha is the Seebeck coefficient and rho is the resistivity) can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of alpha sq/rho should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides will be pressed, together with structural properties of these materials.

Thermoelectric Properties of Topological Crystalline Insulator Nanowires

NASA Astrophysics Data System (ADS)

Xu, Enzhi

Bulk lead telluride (PbTe) and its alloy compounds are well-known thermoelectric materials for electric power generation. Tin telluride (SnTe) which has the same rock-salt crystalline structure as PbTe has recently been demonstrated to host unique topological surface states that may favor improved thermoelectric properties. In this thesis work, we studied the thermoelectric properties of single-crystalline nanowires of the SnTe family compounds, i.e. undoped SnTe, PbTe, (Sn,Pb)Te alloy, and In-doped SnTe, all of which were grown by a vapor transport approach. We measured the thermopower S, electrical conductivity sigma and thermal conductivity kappa on each individual nanowire over a temperature range of 25 - 300 K, from which the thermoelectric figures of merit ZTs were determined. In comparison to PbTe nanowires, SnTe and (Sn,Pb)Te has lower thermopower but significantly higher electrical conductivity. Both SnTe and (Sn,Pb)Te nanowires showed enhanced thermopower and suppressed thermal conductivity, compared to their bulk counterparts. The enhancement of thermopower may result from the existence of topological surface states, while the suppression of thermal conductivity may relate to the increased phonon-surface scattering in nanowires. Moreover, indium doping suppresses both electrical and thermal conductivities but enhances thermopower, yielding an improved figure of merit ZT. Our results highlight nanostructuring in combination with alloying or doping as an important approach to enhancing thermoelectric properties. In spite of excellent thermoelectric properties and robust topological surface states, we found that the nanowire surface is subject to fast oxidation. In particular, we demonstrated that exposure of In-doped SnTe nanowires to air leads to surface oxidation within only one minute. Transmission electron microscopy characterization suggests the amorphous nature of the surface, and X-ray photoelectron spectroscopy studies identify the oxide species on

Thermoelectric Properties of Variants of Cu4Mn2Te4 with Spinel-Related Structure.

PubMed

Guo, Quansheng; Vaney, Jean-Baptiste; Virtudazo, Raymond; Minami, Ryunosuke; Michiue, Yuichi; Yamabe-Mitarai, Yoko; Mori, Takao

2018-05-07

Thermoelectric properties of Cu 4 Mn 2 Te 4 , which is antiferromagnetic with a Néel temperature T N = 50 K and crystallizes in a spinel-related structure, have been investigated comprehensively here. The phase transition occurring at temperatures 463 and 723 K is studied by high-temperature X-ray diffraction (XRD) and differential scanning calorimetry (DSC), and its effect on thermoelectric properties is examined. Hypothetically Cu 4 Mn 2 Te 4 is semiconducting according to the formula (Cu + ) 4 (Mn 2+ ) 2 (Te 2- ) 4 , while experimentally it shows p-type metallic conduction behavior, exhibiting electrical conductivity σ = 2500 Ω -1 cm -1 and Seebeck coefficient α = 20 μV K -1 at 325 K. Herein, we show that the carrier concentration and thus the thermoelectric transport properties could be further optimized through adding electron donors such as excess Mn. Discussions are made on the physical parameters contributing to the low thermal conductivity, including Debye temperature, speed of sound, and the Grüneisen parameter. As a result of simultaneously boosted power factor and reduced thermal conductivity, a moderately high zT = 0.65 at 680 K is obtained in an excess Mn\\In co-added sample, amounting to 5 times that of the pristine Cu 4 Mn 2 Te 4 . This value ( zT = 0.65) is the best result ever reported for spinel and spinel-related chalcogenides.

Effect of bath temperature on structure, morphology and thermoelectric properties of CoSb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Suchitra, E-mail: suchitrayadav87@gmail.com; Pandya, Dinesh K.; Chaudhary, Sujeet

2016-05-23

CoSb{sub 3} thin films are deposited on conducting glass substrates (FTO) by electrodeposition at different bath temperatures (60°C, 70°C and 80°C) and the resulting influence of the bath temperature on the structure, morphology and electrical properties of films is investigated. X-ray diffraction confirms the formation of CoSb{sub 3} phase in the films. Scanning electron microscopy reveals that different morphologies ranging from branched nano-flakes to nano-needles evolve as bath temperature increases. It is concluded that a growth temperature of 80°C is suitable for producing CoSb{sub 3} films with such properties that show potential feasibility for thermoelectric applications.

Modeling a Thermoelectric Generator Applied to Diesel Automotive Heat Recovery

NASA Astrophysics Data System (ADS)

Espinosa, N.; Lazard, M.; Aixala, L.; Scherrer, H.

2010-09-01

Thermoelectric generators (TEGs) are outstanding devices for automotive waste heat recovery. Their packaging, lack of moving parts, and direct heat to electrical conversion are the main benefits. Usually, TEGs are modeled with a constant hot-source temperature. However, energy in exhaust gases is limited, thus leading to a temperature decrease as heat is recovered. Therefore thermoelectric properties change along the TEG, affecting performance. A thermoelectric generator composed of Mg2Si/Zn4Sb3 for high temperatures followed by Bi2Te3 for low temperatures has been modeled using engineering equation solver (EES) software. The model uses the finite-difference method with a strip-fins convective heat transfer coefficient. It has been validated on a commercial module with well-known properties. The thermoelectric connection and the number of thermoelements have been addressed as well as the optimum proportion of high-temperature material for a given thermoelectric heat exchanger. TEG output power has been estimated for a typical commercial vehicle at 90°C coolant temperature.

Thermoelectric Properties of Selenides Spinels

NASA Technical Reports Server (NTRS)

Snyder, G.; Caillat, T.; Fleurial, J-P.

2000-01-01

Many compounds with the spinel structure type have been analyzed for their thermoelectric properties. Published data was used to augment experimental results presented here to select promising thermoelectric spinels.

High performance thermoelectric materials and methods of preparation

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1997-01-01

Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Estimates of the thermal conductivity and the thermoelectric properties of PbTiO3 from first principles

NASA Astrophysics Data System (ADS)

Roy, Anindya

2016-03-01

The lattice thermal conductivity (κL) of PbTiO3 is estimated using a combination of ab initio calculations and the semiclassical Boltzmann transport equation. The computed κL is remarkably low, nearly comparable with the κL of good thermoelectric materials such as PbTe. In addition, a semiclassical analysis of the electronic transport quantities is presented, which suggests excellent thermoelectric properties, with a figure of merit z T well over 1 for a wide range of temperatures. For thermoelectric applications, the κL could be further reduced by utilizing different morphologies and compositions.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Comparison of Predicted Thermoelectric Energy Conversion Efficiency by Cumulative Properties and Reduced Variables Approaches

NASA Astrophysics Data System (ADS)

Linker, Thomas M.; Lee, Glenn S.; Beekman, Matt

2018-06-01

The semi-analytical methods of thermoelectric energy conversion efficiency calculation based on the cumulative properties approach and reduced variables approach are compared for 21 high performance thermoelectric materials. Both approaches account for the temperature dependence of the material properties as well as the Thomson effect, thus the predicted conversion efficiencies are generally lower than that based on the conventional thermoelectric figure of merit ZT for nearly all of the materials evaluated. The two methods also predict material energy conversion efficiencies that are in very good agreement which each other, even for large temperature differences (average percent difference of 4% with maximum observed deviation of 11%). The tradeoff between obtaining a reliable assessment of a material's potential for thermoelectric applications and the complexity of implementation of the three models, as well as the advantages of using more accurate modeling approaches in evaluating new thermoelectric materials, are highlighted.

Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

NASA Astrophysics Data System (ADS)

Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P. C.; Kanchana, V.

2016-11-01

First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here.

About the feasibilities of controlling the properties of thermoelectric energy converters using optical radiation

NASA Astrophysics Data System (ADS)

Kshevetsky, Oleg S.

2018-01-01

We represent evaluating analysis of the feasibilities for controlling the properties of thermoelectric energy converters using EM radiation in the regimes of cooling, heating, electromotive force generation, or electric current generation. Thus we investigate the influence of optical radiation both on electric conductivity and thermo-electromotive force coefficient of thermoelectric materials. We also discuss promising applications for controlling the properties of thermoelectric energy converters using EM radiation. We represent the results of experimental study of positionsensitive energy converters in the regimes of electromotive force generation and the electric current generation (in part, photo-thermoelectric position-sensitive temperature detectors), position-sensitive photo-thermoelectric energy converters in the regimes of cooling, heating, parallel photoelectric and thermoelectric conversion of sun-light optical radiation into electric power.

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides.

PubMed

Rhyee, Jong-Soo; Kim, Jin Hee

2015-03-20

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In₄Se₃ - δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In₄Se₃ - δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In₄Se₃ - δ Cl 0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n -type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

NASA Astrophysics Data System (ADS)

Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

2018-04-01

The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

NASA Astrophysics Data System (ADS)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys

NASA Technical Reports Server (NTRS)

Vining, Cronin B.; Laskow, William; Hanson, Jack O.; Van Der Beck, Roland R.; Gorsuch, Paul D.

1991-01-01

The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

Thermoelectric properties of rare earth chalcogenides

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Raag, V.; Wood, C.

1985-01-01

The rare earth chalcogenides are important thermoelectric materials due to their high melting points, self-doping capabilities, and low thermal conductivities. Lanthanum sulfides and lanthanum tellurides have been synthesized in quartz ampules, hot-pressed into samples, and measured. The n-type Seebeck coefficients, electrical resistivities, and power factors generally all increased as the temperature increased from 200 to 1000 C. The figure-of-merit for nonstoichiometric lanthanum telluride was 0.001/deg C at 1000 C, considerably higher than for silicon-germanium. Thermoelectric measurements were made for LaTe(2) and YbS(1.4), and p-type behavior was observed for these compounds from 300 to 1100 C.

High-accuracy direct ZT and intrinsic properties measurement of thermoelectric couple devices.

PubMed

Kraemer, D; Chen, G

2014-04-01

Advances in thermoelectric materials in recent years have led to significant improvements in thermoelectric device performance and thus, give rise to many new potential applications. In order to optimize a thermoelectric device for specific applications and to accurately predict its performance ideally the material's figure of merit ZT as well as the individual intrinsic properties (Seebeck coefficient, electrical resistivity, and thermal conductivity) should be known with high accuracy. For that matter, we developed two experimental methods in which the first directly obtains the ZT and the second directly measures the individual intrinsic leg properties of the same p/n-type thermoelectric couple device. This has the advantage that all material properties are measured in the same sample direction after the thermoelectric legs have been mounted in the final device. Therefore, possible effects from crystal anisotropy and from the device fabrication process are accounted for. The Seebeck coefficients, electrical resistivities, and thermal conductivities are measured with differential methods to minimize measurement uncertainties to below 3%. The thermoelectric couple ZT is directly measured with a differential Harman method which is in excellent agreement with the calculated ZT from the individual leg properties. The errors in both the directly measured and calculated thermoelectric couple ZT are below 5% which is significantly lower than typical uncertainties using commercial methods. Thus, the developed technique is ideal for characterizing assembled couple devices and individual thermoelectric materials and enables accurate device optimization and performance predictions. We demonstrate the methods by measuring a p/n-type thermoelectric couple device assembled from commercial bulk thermoelectric Bi2Te3 elements in the temperature range of 30 °C-150 °C and discuss the performance of the couple thermoelectric generator in terms of its efficiency and materials

Thermoelectric properties and performance of flexible reduced graphene oxide films up to 3,000 K

NASA Astrophysics Data System (ADS)

Li, Tian; Pickel, Andrea D.; Yao, Yonggang; Chen, Yanan; Zeng, Yuqiang; Lacey, Steven D.; Li, Yiju; Wang, Yilin; Dai, Jiaqi; Wang, Yanbin; Yang, Bao; Fuhrer, Michael S.; Marconnet, Amy; Dames, Chris; Drew, Dennis H.; Hu, Liangbing

2018-02-01

The development of ultrahigh-temperature thermoelectric materials could enable thermoelectric topping of combustion power cycles as well as extending the range of direct thermoelectric power generation in concentrated solar power. However, thermoelectric operation temperatures have been restricted to under 1,500 K due to the lack of suitable materials. Here, we demonstrate a thermoelectric conversion material based on high-temperature reduced graphene oxide nanosheets that can perform reliably up to 3,000 K. After a reduction treatment at 3,300 K, the nanosheet film exhibits an increased conductivity to 4,000 S cm-1 at 3,000 K and a high power factor S2σ = 54.5 µW cm-1 K-2. We report measurements characterizing the film's thermoelectric properties up to 3,000 K. The reduced graphene oxide film also exhibits a high broadband radiation absorbance and can act as both a radiative receiver and a thermoelectric generator. The printable, lightweight and flexible film is attractive for system integration and scalable manufacturing.

Effect of Ag doping and annealing on thermoelectric properties of PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bala, Manju, E-mail: Manjubala474@gmail.com; Tripathi, T. S.; Avasthi, D. K.

2015-06-24

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

PubMed Central

Rhyee, Jong-Soo; Kim, Jin Hee

2015-01-01

Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential. PMID:28788002

Structurally complex Zintl compounds for high temperature thermoelectric power generation

NASA Astrophysics Data System (ADS)

Zevalkink, Alexandra; Pomrehn, Gregory; Gibbs, Zachary; Snyder, Jeffrey

2014-03-01

Zintl phases, characterized by covalently-bonded substructures surrounded by highly electropositive cations, exhibit many of the characteristics desired for thermoelectric applications. Recently, we demonstrated promising thermoelectric performance (zT values between 0.4 and 0.9) in a class of Zintl antimonides that share a common structural motif: anionic moieties resembling infinite chains of linked tetrahedra. These compounds (A5M2 Sb6 and A3 M Sb3 compounds where A = Ca or Sr and M = Al, Ga and In) crystallize as four distinct, but closely related chain-forming structure types. Their large unit cells lead to exceptionally low lattice thermal conductivity due to the containment of heat in low velocity optical phonon modes. Here, we show that chemical substitutions on the A and M sites can be used to control the electronic and thermal transport properties and optimize the thermoelectric figure of merit. Doping with alio-valent elements allows for rational control of the carrier concentration, while isoelectronic substitutions can be used to fine-tune the intrinsic properties. A combination of Density Functional calculations and classical transport models was used to explain the experimentally observed transport properties of these compounds.

Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

Materials for high-temperature thermoelectric conversion

NASA Technical Reports Server (NTRS)

Feigelson, R. S.; Elwell, D.; Auld, B. A.

1984-01-01

The development of materials for high temperature thermoelectric energy conversion devices was investigated. The development of new criteria for the selection of materials which is based on understanding of the fundamental principles governing the behavior of high temperature thermoelectric materials is discussed. The synthesis and characterization of promising new materials and the growth of single crystals to eliminate possible problems associated with grain boundaries and other defects in polycrystalline materials are outlined.

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1978-01-01

The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.

Lifshitz transition and thermoelectric properties of bilayer graphene

NASA Astrophysics Data System (ADS)

Suszalski, Dominik; Rut, Grzegorz; Rycerz, Adam

2018-03-01

This is a numerical study of thermoelectric properties of ballistic bilayer graphene in the presence of a trigonal warping term in the effective Hamiltonian. We find, in the mesoscopic samples of the length L >10 μ m at sub-Kelvin temperatures, that both the Seebeck coefficient and the Lorentz number show anomalies (the additional maximum and minimum, respectively) when the electrochemical potential is close to the Lifshitz energy, which can be attributed to the presence of the van Hove singularity in a bulk density of states. At higher temperatures the anomalies vanish, but measurable quantities characterizing the remaining maximum of the Seebeck coefficient still unveil the presence of massless Dirac fermions and make it possible to determine the trigonal warping strength. Behavior of the thermoelectric figure of merit (Z T ) is also discussed.

Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

NASA Astrophysics Data System (ADS)

Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

2018-04-01

Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

Thermoelectric Properties of Selenospinel Cu6Fe4Sn12Se32

NASA Astrophysics Data System (ADS)

Suekuni, Koichiro; Kunii, Masaru; Nishiate, Hirotaka; Ohta, Michihiro; Yamamoto, Atsushi; Koyano, Mikio

2012-06-01

This report describes thermoelectric properties up to 500 K for polycrystalline selenospinel Cu6Fe4Sn12Se32 samples. Thermal conductivity shows a low value of 1 W/Km because of their structural complexity such as Fe/Sn site disorder. Electrical resistivity ρ varies as exp( T 0/ T 1/4) and thermopower S varies as T 1/2 at low temperatures, which indicates that Mott variable-range hopping is the dominant conduction mechanism. However, at high temperatures (above 350 K), ρ and S decrease simultaneously. The temperature dependences are attributed to the thermal excitation of electrons. The possible band structure for Cu6Fe4Sn12Se32 is examined to clarify the behavior of ρ and S.

Synthesis of the thermoelectric nanopowder recovered from the used thermoelectric modules.

PubMed

Lee, Kun-Jae; Jin, Yun-Ho; Kong, Man-Sik

2014-10-01

We fabricated the thermoelectric powder using the used thermoelectric modules in a vehicle. As a starting material, the used thermoelectric modules were collected and separated to substrate, electrode, solder, and thermoelectric parts by a thermal process. The separation process was performed in a wet process at the critical temperature. The solder in the module was the neighbor part of the thermoelectric material with the lowest melting temperature in the module. We focused on the thermal property of the solder to separate the thermoelectric chips in the module. After the separation process, we prepared the pure thermoelectric material by the chemical etching for an impurity removal. Also the thermoelectric nanopowder was fabricated by a chemical reduction reaction using the recycled thermoelectric materials. The recovered nanopowder was confirmed to the phase of bismuth telluride (Bi2Te3) with the particle size of -15 nm.

Thermoelectric effects in a rectangular Aharonov-Bohm geometry

NASA Astrophysics Data System (ADS)

Pye, A. J.; Faux, D. A.; Kearney, M. J.

2016-04-01

The thermoelectric transport properties of a rectangular Aharonov-Bohm ring at low temperature are investigated using a theoretical approach based on Green's functions. The oscillations in the transmission coefficient as the field is varied can be used to tune the thermoelectric response of the ring. Large magnitude thermopowers are obtainable which, in conjunction with low conductance, can result in a high thermoelectric figure of merit. The effects of single site impurities and more general Anderson disorder are considered explicitly in the context of evaluating their effect on the Fano-type resonances in the transmission coefficient. Importantly, it is shown that even for moderate levels of disorder, the thermoelectric figure of merit can remain significant, increasing the appeal of such structures from the perspective of specialist thermoelectric applications.

Thermoelectric properties of n-type polycrystalline BixSb2-xTe3 alloys

NASA Technical Reports Server (NTRS)

Snyder, J.; Gerovac, N.; Caillat, T.

2002-01-01

(BixSbl-x)2Te3(.5 = x = .7) polycrystalline samples were synthesized using a combination of melting and powder metallurgy techniques. The samples were hot pressed in graphite dies and cut perpendicular and parallel to the pressing direction. Samples were examined by microprobe analysis to determine their atomic composition. The thermoelectric properties were measured at room temperature in both directions. These properties include Seebeck coefficient, thermal conductivity, electrical resistivity, and Hall effect. The thermoelectric figure-of-merit, ZT, was calculated fiom these properties.

Development of Thermoelectric Power Generation and Peltier Cooling Properties of Materials for Thermoelectric Cryocooling Devices

DTIC Science & Technology

2015-05-12

method. AAMU would like to continue, given future research funding, with our new design for the thermoelectric and photovoltaic systems and hybrid...nanofabrication to develop nanostructured thermoelectric (TE) materials for application in high-efficiency thermoelectric power generators and solid...Distribution Unlimited Final Report: Development of Thermoelectric Power Generation and Peltier Cooling Properties of Materials for Thermoelectric

Analysis of magneto-electronic, thermodynamic and thermoelectric properties of ferromagnetic CoFeCrAl alloy

NASA Astrophysics Data System (ADS)

Mohiuddin Bhat, Tahir; Gupta, Dinesh C.

2017-11-01

The structural stability, electronic, mechanical, thermodynamic and thermoelectric properties of CoFeCrAl have been investigated by modified Beck-Johnson (mBJ) exchange potential. From the optimized calculations, the indirect band gap of 0.65 eV in spin-down was found, which is enhanced than the previously reported data. The material offers the magnetic moment of 2µ B and displays brittle nature with mixed chemical bonding. The thermoelectric properties of the compound in the temperature range 50-550 K have been revealed. Seebeck coefficient at room temperature is  -46 µV K-1 which increases with temperature. At 550 K, the figure-of-merit for n-type compound maximizes up to ~0.41 suggesting a potential thermoelectric material at high temperatures. Meanwhile, quasi-harmonic Debye model was also used to investigate the effect of pressure and temperature on the thermal expansion, Grüneisen parameter and unit cell volume.

Impact of microstructure on the thermoelectric properties of the ternary compound Ce{sub 3}Cu{sub 3}Sb{sub 4}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Witas, Piotr, E-mail: pwitas@us.edu.pl

We present detailed structural and thermoelectric studies of the ternary compound Ce{sub 3}Cu{sub 3}Sb{sub 4}. This material is of interest due to previously reported considerable thermopower above room temperature (∼ 100 μV/K) and low thermal conductivity (2 W/(m K)). Here, we present detailed studies concerning microstructural and thermoelectric data, their variation across the samples and possible explanations for the observed behaviour. We have used X-ray diffraction, scanning electron microscopy (SEM), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) for microstructural analysis. The thermoelectric properties were examined using a physical property measurement system (PPMS). We analyse the impact of the sample qualitymore » on the thermoelectric properties. The most unstable parameter is the material resistivity which varies between 1.5 and 15 mΩ cm at room temperature. The properties variability is mainly due to structural defects caused by stresses during material preparation and also due to formation of foreign phases CeCuSb{sub 2} and CeSb. The figure of merit ZT is also strongly dependent on the quality of the sample. The largest value ZT ≈ 0.15 at 400 K is determined for the almost stoichiometric sample with small amounts of a impurity phases. - Highlights: •The Ce{sub 3}Cu{sub 3}Sb{sub 4} has considerable thermoelectric properties and potential for further chemical and/or structural modification. •The control over foreign phases formation is challenging. •The defects arising during arc melting process highly deteriorate ZT of material.« less

Thermoelectric properties of Nb3SbxTe7-x compounds

NASA Technical Reports Server (NTRS)

Snyder, J.; Wang, S.; Caillat, T.

2002-01-01

Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties.

PubMed

Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

2017-05-24

The enhancement of thermoelectric figure of merit ZT requires to either increase the power factor or reduce the phonon conductance, or even both. In graphene, the high phonon thermal conductivity is the main factor limiting the thermoelectric conversion. The common strategy to enhance ZT is therefore to introduce phonon scatterers to suppress the phonon conductance while retaining high electrical conductance and Seebeck coefficient. Although thermoelectric performance is eventually enhanced, all studies based on this strategy show a significant reduction of the electrical conductance. In this study we demonstrate that appropriate sources of disorder, including isotopes and vacancies at lowest electron density positions, can be used as phonon scatterers to reduce the phonon conductance in graphene ribbons without degrading the electrical conductance, particularly in the low-energy region which is the most important range for device operation. By means of atomistic calculations we show that the natural electronic properties of graphene ribbons can be fully preserved while their thermoelectric efficiency is strongly enhanced. For ribbons of width M = 5 dimer lines, room-temperature ZT is enhanced from less than 0.26 to more than 2.5. This study is likely to set the milestones of a new generation of nano-devices with dual electronic/thermoelectric functionalities.

Nb-doped SrTiO3 glass-ceramics as high temperature stable n-type oxide thermoelectrics

NASA Astrophysics Data System (ADS)

Lingner, Julian; Jakob, Gerhard; Letz, Martin

2012-06-01

Niobium doped SrTiO3 is known for its high potential as an oxide thermoelectric material and is one of the possible candidates for the n-type site in an oxidic thermoelectric module. The high thermal conductivity [1] and the lack of high-temperature stability of the oxygen vacancies [2] limit its properties in the ceramic systems. Glass-ceramics are intrinsic nano-structured systems and provide crystal phases densely embedded in a glass matrix which prevents the material from detoriation at high temperatures. In particular, the glass-matrix prevents an uncontrolled reoxidization as well as an uncontrolled grain growth therefore retaining the nano-structure even at high temperatures. Here, measurements and results of first glass-ceramic systems are presented, which show a low thermal conductivity due to the residue glass phase. Furthermore a stable thermal cycling up to 650 °C is demonstrated.

Low-dimensional thermoelectricity in graphene: The case of gated graphene superlattices

NASA Astrophysics Data System (ADS)

Molina-Valdovinos, S.; Martínez-Rivera, J.; Moreno-Cabrera, N. E.; Rodríguez-Vargas, I.

2018-07-01

Low-dimensional thermoelectricity is a key concept in modern thermoelectricity. This concept refers to the possibility to improve thermoelectric performance through redistribution of the density of states by reducing the dimensionality of thermoelectric devices. Among the most successful low-dimensional structures we can find superlattices of quantum wells, wires and dots. In this work, we show that this concept can be extended to cutting-edge materials like graphene. In specific, we carry out a systematic assessment of the thermoelectric properties of quantum well gated graphene superlattices. In particular, we find giant values for the Seebeck coefficient and the power factor by redistributing the density of states through the modulation of the fundamental parameters of the graphene superlattice. Even more important, these giant values can be further improved by choosing appropriately the angle of incidence of Dirac electrons, the number of superlattice periods, the width of the superlattice unit cell as well as the height of the barriers. We also find that the power factor presents a series of giant peaks, clustered in twin fashion, associated to the oscillating nature of the conductance. Finally, we consider that low-dimensional thermoelectricity in graphene and related 2D materials is promising and constitutes a possible route to push forward this exciting field.

Study on temperature and damage sensing capability of Portland cement paste through the thermoelectric measurements

NASA Astrophysics Data System (ADS)

Hou, Tsung-Chin; Tai, Ko-Hung; Su, Yu-Min

2017-04-01

This study attempted to investigate the self-sensing capability of Portland cement composites in sensing temperature and detecting damages through the measurements of materials' thermoelectric properties. Specimens were made of Ordinary Portland Cement (OPC) with the water to cement ratio of 0.4. Temperature sensing property was characterized at various ages of the specimens from 28 to 49 days and at dried/moisturized conditions. It was found there exists an approximately linear relationship between temperature differences (ΔT) and the measured thermoelectric potentials, which is known as the Seebeck effect. This linearity was observed to be varied but able to be characterized for cement pastes at different ages and water saturation conditions. Mechanical loading that introduced different types and degrees of damages also translated into the variations of thermoelectric properties. Specifically, different types of compressive loads were tested for comparison. The study results have shown that Seebeck coefficient dropped with introduced damages, and restored with the subsequent re-curing as well as the continued cement hydration. Mild and moderate damages can be partially or fully restored, while severe damages that have resulted in significant drop of the Seebeck coefficients would restrain the self-restoration. Determination of the damage threshold was not yet revealed in this study, while it was shown obviously there existed one. Our investigation results indicated that characterizing the self-sensing capability of Portland cement composites is achievable through the measurements of thermoelectric properties. This study, in particular, has showcased the temperature sensing and damage detection capability.

Thermal and thermoelectric properties of graphene.

PubMed

Xu, Yong; Li, Zuanyi; Duan, Wenhui

2014-06-12

The subject of thermal transport at the mesoscopic scale and in low-dimensional systems is interesting for both fundamental research and practical applications. As the first example of truly two-dimensional materials, graphene has exceptionally high thermal conductivity, and thus provides an ideal platform for the research. Here we review recent studies on thermal and thermoelectric properties of graphene, with an emphasis on experimental progresses. A general physical picture based on the Landauer transport formalism is introduced to understand underlying mechanisms. We show that the superior thermal conductivity of graphene is contributed not only by large ballistic thermal conductance but also by very long phonon mean free path (MFP). The long phonon MFP, explained by the low-dimensional nature and high sample purity of graphene, results in important isotope effects and size effects on thermal conduction. In terms of various scattering mechanisms in graphene, several approaches are suggested to control thermal conductivity. Among them, introducing rough boundaries and weakly-coupled interfaces are promising ways to suppress thermal conduction effectively. We also discuss the Seebeck effect of graphene. Graphene itself might not be a good thermoelectric material. However, the concepts developed by graphene research might be applied to improve thermoelectric performance of other materials. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric Materials for Low Temperature Cooling

DTIC Science & Technology

2009-10-02

Sb ratios, and testing the influence of Sn as a p-type dopant . These materials were found to be excellent from a mechanical and chemical viewpoint...some conductive oxides, most famously cobalt oxides, when the electrical charge carriers also Fig. 4. Upper panel: Thermoelectric figure of

Electronic and Thermoelectric Properties of Ternary Chalcohalide Semiconductors: First Principles Study

NASA Astrophysics Data System (ADS)

Khan, Wilayat; Hussain, Sajjad; Minar, Jan; Azam, Sikander

2018-02-01

Ternary chalcohalides have been widely utilized for different device applications. The thermoelectric properties of SbSI, SbSeI and SbSBr have been investigated by theoretical simulations, and the findings have been performed using BoltzTraP code, based on semi-classical Boltzmann transport theory. In this study, we simulated the electronic structures using the Englo-Vosko generalized gradient approximation employed in the WIEN2k program. From the electronic band structures, we found a combination of light and heavy bands around the Fermi level in the valence band, which strongly affect the effective masses of the carriers. The entire thermoelectric parameters, like the electrical, the electronic part of the thermal conductivities, the Seebeck coefficient and the power factor have been analysed as functions of temperature and chemical potential. The correlation between the effective masses and the thermoelectric properties is also included in the discussion because the effective mass reveals the mobility of the carriers which in turn affect the thermoelectric properties. The substitution of sulfur reveals high electrical conductivity and a smaller Seebeck coefficient based on effective mass leads to the increase in the power factor.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Fabrication of Lanthanum Telluride 14-1-11 Zintl High-Temperature Thermoelectric Couple

NASA Technical Reports Server (NTRS)

Ravi, Vilupanur A.; Li, Billy Chun-Yip; Fleurial, Pierre; Star, Kurt

2010-01-01

The development of more efficient thermoelectric couple technology capable of operating with high-grade heat sources up to 1,275 K is key to improving the performance of radioisotope thermoelectric generators. Lanthanum telluride La3-xTe4 and 14-1-11 Zintls (Yb14MnSb11) have been identified as very promising materials. The fabrication of advanced high-temperature thermoelectric couples requires the joining of several dissimilar materials, typically including a number of diffusion bonding and brazing steps, to achieve a device capable of operating at elevated temperatures across a large temperature differential (up to 900 K). A thermoelectric couple typically comprises a heat collector/ exchanger, metallic interconnects on both hot and cold sides, n-type and ptype conductivity thermoelectric elements, and cold-side hardware to connect to the cold-side heat rejection and provide electrical connections. Differences in the physical, mechanical, and chemical properties of the materials that make up the thermoelectric couple, especially differences in the coefficients of thermal expansion (CTE), result in undesirable interfacial stresses that can lead to mechanical failure of the device. The problem is further complicated by the fact that the thermoelectric materials under consideration have large CTE values, are brittle, and cracks can propagate through them with minimal resistance. The inherent challenge of bonding brittle, high-thermal-expansion thermoelectric materials to a hot shoe material that is thick enough to carry the requisite electrical current was overcome. A critical advantage over prior art is that this device was constructed using all diffusion bonds and a minimum number of assembly steps. The fabrication process and the materials used are described in the following steps: (1) Applying a thin refractory metal foil to both sides of lanthanum telluride. To fabricate the n-type leg of the advanced thermoelectric couple, the pre-synthesized lanthanum

Low temperature thermoelectric properties of hot pressed composite samples of CrSb2: evidence for possible phonon-drag effect.

NASA Astrophysics Data System (ADS)

Pokharel, Mani; Koirala, Machhindra; Ren, Zhifeng; Opeil, Cyril

We present on the thermoelectric transport properties of CrSb2 samples prepared by hot-press densification in the temperature range of 2 - 350 K. At around 10 K, the thermal conductivity of CrSb2 decreases dramatically by three orders of magnitude compared to the single crystal counterpart. Analysis shows that the reduced thermal conductivity results from increased scattering of the phonons off the grain-boundaries within the samples. A strong interrelationship between the thermal conductivity and the Seebeck coefficient is observed; indicating a significant presence of phonon-drag effect in this system. With ZT = 0.018 at 310 K for the sample hot pressed at 600 oC, an increase in ZT by 80 % over the previously reported values for polycrystalline samples is achieved. We gratefully acknowledge funding for this work by the Department of Defense, United States Air Force Office of Scientific Researchs MURI program under contract FA9550-10-1-0533.

Influence of defect distribution on the thermoelectric properties of FeNbSb based materials.

PubMed

Guo, Shuping; Yang, Kaishuai; Zeng, Zhi; Zhang, Yongsheng

2018-05-21

Doping and alloying are important methodologies to improve the thermoelectric performance of FeNbSb based materials. To fully understand the influence of point defects on the thermoelectric properties, we have used density functional calculations in combination with the cluster expansion and Monte Carlo methods to examine the defect distribution behaviors in the mesoscopic FeNb1-xVxSb and FeNb1-xTixSb systems. We find that V and Ti exhibit different distribution behaviors in FeNbSb at low temperature: forming the FeNbSb-FeVSb phase separations in the FeNb1-xVxSb system but two thermodynamically stable phases in FeNb1-xTixSb. Based on the calculated effective mass and band degeneracy, it seems the doping concentration of V or Ti in FeNbSb has little effect on the electrical properties, except for one of the theoretically predicted stable Ti phases (Fe6Nb5Ti1Sb6). Thus, an essential methodology to improve the thermoelectric performance of FeNbSb should rely on phonon scattering to decrease the thermal conductivity. According to the theoretically determined phase diagrams of Fe(Nb,V)Sb and Fe(Nb,Ti)Sb, we propose the (composition, temperature) conditions for the experimental synthesis to improve the thermoelectric performance of FeNbSb based materials: lowering the experimental preparation temperature to around the phase boundary to form a mixture of the solid solution and phase separation. The point defects in the solid solution effectively scatter the short-wavelength phonons and the (coherent or incoherent) interfaces introduced by the phase separation can additionally scatter the middle-wavelength phonons to further decrease the thermal conductivity. Moreover, the induced interfaces could enhance the Seebeck coefficient as well, through the energy filtering effect. Our results give insight into the understanding of the impact of the defect distribution on the thermoelectric performance of materials and strengthen the connection between theoretical predictions and

Thermoelectric Control Of Temperatures Of Pressure Sensors

NASA Technical Reports Server (NTRS)

Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

1995-01-01

Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

Effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films

NASA Astrophysics Data System (ADS)

Kudo, Kohei; Yamada, Shinya; Chikada, Jinichiro; Shimanuki, Yuta; Nakamura, Yoshiaki; Hamaya, Kohei

2018-04-01

We study the effect of Fe-V nonstoichiometry on electrical and thermoelectric properties of Fe2VAl films. We find that temperature dependence of electrical resistivity and carrier type for Fe2- x V1+ x Al films are similar to those for bulk samples reported previously. In addition, the electrical and thermoelectric properties can be modulated by varying x. These results indicate that the electronic band structure having a pseudo gap at around the Fermi level is demonstrated even in thin-film Fe2VAl samples. This study will lead to further improvement in thermoelectric properties of the thin-film Fe2VAl.

Enhanced Thermoelectric Properties of Cu 2ZnSnSe 4 with Ga-doping

DOE PAGES

Wei, Kaya; Beauchemin, Laura; Wang, Hsin; ...

2015-08-10

Gallium doped Cu 2ZnSnSe 4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S 2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are partmore » of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

Thin-film thermoelectric devices with high room-temperature figures of merit.

PubMed

Venkatasubramanian, R; Siivola, E; Colpitts, T; O'Quinn, B

2001-10-11

Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.

Thermoelectric properties of rocksalt ZnO from first-principles calculations

DOE PAGES

Alvarado, Andrew; Attapattu, Jeevake; Zhang, Yi; ...

2015-10-22

Zinc oxide (ZnO) undergoes a pressure-induced structural transition from its normal ambient-pressure wurtzite (WZ) phase to a rocksalt (RS) phase around 10 GPa. A recent experiment shows that the high-pressure RS ZnO phase can be recovered and stabilized at ambient conditions, which raises exciting prospects of expanding the range of properties of ZnO. For a fundamental understanding of the RS ZnO phase, we have performed first-principles calculations to determine its electronic, phonon, and thermodynamic properties at high (20 GPa) and ambient (0 GPa) pressure. Furthermore, we have calculated its electrical and thermal transport properties, which allow an evaluation of itsmore » thermoelectric figure of merit ZT at different temperature and doping levels. Our calculations show that the ambient-pressure RS ZnO phase can reach ZT values of 0.25 to 0.3 under both n-type and p-type doping in a large temperature range of 400 K to 800 K, which is considerably lower than the temperature range of 1400 K to 1600 K where WZ ZnO reaches similar ZT values. Lastly, these results establish RS ZnO as a promising material for thermoelectric devices designed to operate at temperatures desirable for many heat recovery applications.« less

Development of a Small Thermoelectric Generators Prototype for Energy Harvesting from Low Temperature Waste Heat at Industrial Plant.

PubMed

Chiarotti, Ugo; Moroli, Valerio; Menchetti, Fernando; Piancaldini, Roberto; Bianco, Loris; Viotto, Alberto; Baracchini, Giulia; Gaspardo, Daniele; Nazzi, Fabio; Curti, Maurizio; Gabriele, Massimiliano

2017-03-01

A 39-W thermoelectric generator prototype has been realized and then installed in industrial plant for on-line trials. The prototype was developed as an energy harvesting demonstrator using low temperature cooling water waste heat as energy source. The objective of the research program is to measure the actual performances of this kind of device working with industrial water below 90 °C, as hot source, and fresh water at a temperature of about 15 °C, as cold sink. The article shows the first results of the research program. It was verified, under the tested operative conditions, that the produced electric power exceeds the energy required to pump the water from the hot source and cold sink to the thermoelectric generator unit if they are located at a distance not exceeding 50 m and the electric energy conversion efficiency is 0.33%. It was calculated that increasing the distance of the hot source and cold sink to the thermoelectric generator unit to 100 m the produced electric energy equals the energy required for water pumping, while reducing the distance of the hot source and cold sink to zero meters the developed unit produces an electric energy conversion efficiency of 0.61%.

Thermoelectric properties of Ge 1-xSn xTe crystals grown by vertical Bridgman method

NASA Astrophysics Data System (ADS)

Wu, C. C.; Ferng, N. J.; Gau, H. J.

2007-06-01

Single crystals of Ge 1-xSn xTe compounds with x=0, 0.8, 0.9 and 1.0 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, metallographic microscope as well as electron-probe microanalysis (EPMA). Electrical property of the as-grown samples was characterized using room temperature resistivity and Hall measurements. The thermoelectric behaviors for the Ge 1-xSn xTe crystals were studied by means of thermal and carrier transport measurements. Temperature dependences of resistivity, Seebeck coefficient and thermal conductivity for the various compositions of Ge 1-xSn xTe were analyzed. A two-valence band model was proposed to describe the temperature dependence of thermoelectric property of the Ge 1-xSn xTe crystals. The dimensionless thermoelectric figure of merit ZT for the alloys was evaluated and discussed.

Enhanced Thermoelectric Properties of Double-Filled CoSb3 via High-Pressure Regulating.

PubMed

Wang, Libin; Deng, Le; Qin, Jieming; Jia, Xiaopeng

2018-05-24

It has been discussed for a long time that synthetic pressure can effectively optimize thermoelectric properties. The beneficial effect of synthesis pressures on thermoelectric properties has been discussed for a long time. In this paper, it is theoretically and experimentally demonstrated that appropriate synthesis pressures can increase the figure of merit (ZT) through optimizing thermal transport and electronic transport properties. Indium and barium atoms double-filled CoSb 3 samples were prepared use high-pressure and high-temperature technique for half an hour. X-ray diffraction and some structure analysis were used to reveal the relationship between microstructures and thermoelectric properties. In 0.15 Ba 0.35 Co 4 Sb 12 samples were synthesized by different pressures; sample synthesized by 3 GPa has the best electrical transport properties, and sample synthesized by 2.5 GPa has the lowest thermal conductivity. The maximum ZT value of sample synthesized by 3.0 GPa reached 1.18.

Size effect on thermoelectric properties of Bi2Te3 nanoparticles

NASA Astrophysics Data System (ADS)

Choudhary, K. K.; Sharma, Uttam; Lodhi, Pavitra Devi; Kaurav, Netram

2018-05-01

Bi2Te3 nanoparticles exhibit size dependent thermoelectric properties which gives an opportunity to tune the size for optimization of the thermoelectric figure of merit (ZT). We have quantitatively analyzed the thermoelectric properties of Bi2Te3 using phonon scattering mechanism by incorporating the scattering of phonons with defects, grain boundaries, electrons and Umklapp phonon scatterings. The maximum value of ZT = 0.92 is obtained at T = 400 K for 30 nm Bi2Te3 nanoparticles in comparison to ZT = 0.45 for 150 nm nanoparticles at the same temperature. With decrease in size of nanoparticles interface volume ratio increases which increase the phonon scatterings with grain boundaries and point defects, results in decrease in thermal conductivity due to reduction in mean free path of phonons. As a result of decrease in thermal conductivity (κ), Seeback coefficient (S) and ZT increases.

Magnetic and thermoelectric properties of electron doped Ca0.85Pr0.15MnO3

NASA Astrophysics Data System (ADS)

Hossain Khan, Momin; Pal, Sudipta; Bose, Esa

2015-10-01

We have investigated temperature-dependent magnetization (M), magnetic susceptibility (χ) and thermoelectric (S) properties of the electron-doped Ca0.85Pr0.15MnO3. With decrease of temperature, paramagnetic (PM) to antiferromagnetic (AFM) phase transition occurs with a well-defined Néel temperature (TN=122 K). Magnetic susceptibility measurements reveal that the paramagnetic state involves modified Curie-Weiss paramagnetism. Field cooled and zero field cooled magnetization measurements indicate a signature of magnetic frustration. Ferromagnetic (FM) double-exchange interactions associated with doped eg electrons are favored over competing AFM interactions below Tirr=112 K. Magnetization data also shows a second-order phase transition. The sign reversal in S(T) has been interpreted in terms of the change in the electronic structure relating to the orbital degrees of freedom of the doped eg electron. Low temperature (5-140 K) thermoelectric power, S (T) signifies the importance of electron-magnon scattering process.

Anisotropic thermoelectric properties of layered compounds in SnX2 (X = S, Se): a promising thermoelectric material.

PubMed

Sun, Bao-Zhen; Ma, Zuju; He, Chao; Wu, Kechen

2015-11-28

Thermoelectrics interconvert heat to electricity and are of great interest in waste heat recovery, solid-state cooling and so on. Here we assessed the potential of SnS2 and SnSe2 as thermoelectric materials at the temperature gradient from 300 to 800 K. Reflecting the crystal structure, the transport coefficients are highly anisotropic between a and c directions, in particular for the electrical conductivity. The preferred direction for both materials is the a direction in TE application. Most strikingly, when 800 K is reached, SnS2 can show a peak power factor (PF) of 15.50 μW cm(-1) K(-2) along the a direction, while a relatively low value (11.72 μW cm(-1) K(-2)) is obtained in the same direction of SnSe2. These values are comparable to those observed in thermoelectrics such as SnSe and SnS. At 300 K, the minimum lattice thermal conductivity (κmin) along the a direction is estimated to be about 0.67 and 0.55 W m(-1) K(-1) for SnS2 and SnSe2, respectively, even lower than the measured lattice thermal conductivity of Bi2Te3 (1.28 W m(-1) K(-1) at 300 K). The reasonable PF and κmin suggest that both SnS2 and SnSe2 are potential thermoelectric materials. Indeed, the estimated peak ZT can approach 0.88 for SnSe2 and a higher value of 0.96 for SnS2 along the a direction at a carrier concentration of 1.94 × 10(19) (SnSe2) vs. 2.87 × 10(19) cm(-3) (SnS2). The best ZT values in SnX2 (X = S, Se) are comparable to that in Bi2Te3 (0.8), a typical thermoelectric material. We hope that this theoretical investigation will provide useful information for further experimental and theoretical studies on optimizing the thermoelectric properties of SnX2 materials.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires.

PubMed

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

2017-09-14

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

NASA Astrophysics Data System (ADS)

Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

2017-07-01

Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

Preparation and Thermoelectric Properties of Semiconcucting Zn(sub 4) Sb(sub 3)

NASA Technical Reports Server (NTRS)

Caillat, T.; Fleurial, J. P.; Barshchevsky, A.

1996-01-01

Hot-pressed samples fothe semiconducting compound Beta - Zn(sub 4) Sb(sub 3) were prepared and characterized by x-ray and microprobe analysis. Some physical properties of Beta - Zn(sub 4) Sb(sub 3) were determined and its thermoelectric properties measured between room temperature and 650K.

Improved microstructure and thermoelectric properties of iodine doped indium selenide as a function of sintering temperature

NASA Astrophysics Data System (ADS)

Dhama, Pallavi; Kumar, Aparabal; Banerji, P.

2018-04-01

In this paper, we explored the effect of sintering temperature on the microstructure, thermal and electrical properties of iodine doped indium selenide in the temperature range 300 - 700 K. Samples were prepared by a collaborative process of vacuum melting, ball milling and spark plasma sintering at 570 K, 630 K and 690 K. Single phase samples were obtained at higher sintering temperature as InSe is stable only at lower temperature. With increasing sintering temperature, densities of the samples were found to improve with larger grain size formation. Negative values of Seebeck coefficient were observed which indicates n-type carrier transport. Seebeck coefficient increases with sintering temperature and found to be the highest for the sample sintered at 690 K. Thermal conductivity found to be lower in the samples sintered at lower temperatures. The maximum thermoelectric figure of merit found to be ˜ 1 at 700 K due to the enhanced power factor as a result of improved microstructure.

Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics in different oxygen-reduction conditions

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Jian; Wang, Chun-Lei; Su, Wen-Bin; Zhu, Yuan-Hu; Li, Ji-Chao; Mei, Liang-Mo

2015-04-01

The thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics, reduced in different conditions, are investigated in the temperature range from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the thermal-activated polaron hopping in the low temperature range, the Fermi glass behavior in the middle temperature range, and the Anderson localized behavior in the high temperature range. The thermal conductivity presents a plateau at high-temperatures, indicating a glass-like thermal conduction behavior. Both the thermoelectric power factor and the thermal conductivity increase with the increase of the degree of oxygen-reduction. Taking these two factors into account, the oxygen-reduction can still contribute to promoting the thermoelectric figure of merit. The highest ZT value is obtained to be ˜0.19 at 1073 K in the heaviest oxygen reduced sample. Project supported by the National Basic Research Program of China (Grant No. 2013CB632506) and the National Natural Science Foundation of China (Grant Nos. 51202132 and 51002087).

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k-cubic spin-orbit coupling.

PubMed

Mawrie, Alestin; Verma, Sonu; Ghosh, Tarun Kanti

2017-10-25

We investigate the effect of k-cubic spin-orbit interaction on the electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions [Formula: see text] with [Formula: see text]. We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of k-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of a quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in the low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant.

High-Temperature Thermoelectric Properties of Perovskite-Type Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1)

NASA Astrophysics Data System (ADS)

Nakatsugawa, H.; Saito, M.; Okamoto, Y.

2017-05-01

Polycrystalline samples of Pr0.9Sr0.1Mn1- x Fe x O3 (0 ≤ x ≤ 1) have been synthesized using a conventional solid-state reaction method, and the crystal structure studied at room temperature. The magnetic susceptibility was measured from 5 K to 350 K. The electrical resistivity, Seebeck coefficient, and thermal conductivity were investigated as functions of temperature below 850 K. For all samples, the perovskite structure at room temperature exhibited orthorhombic Pbnm phase. While the Pr0.9Sr0.1MnO3 ( x = 0) sample exhibited ferromagnetic-like ground state below T C = 145 K (Curie temperature), the ferromagnetic transition temperature T C decreased with increasing x. The Seebeck coefficient of the samples with 0 ≤ x ≤ 0.8 decreased with increasing temperature because of double-exchange interaction of Mn ions. In fact, the carrier type for x = 0 changed from hole-like to electron-like behavior above 800 K. On the other hand, the samples with x ≥ 0.9 showed large positive Seebeck coefficient over the entire temperature range, indicating that the low-spin state of Fe ions dominated the electronic structure for this x range. In particular, the sample with x = 1 exhibited p-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical resistivity, and low thermal conductivity. Thus, the sample with x = 1 showed power factor of 20 μW m-1 K-2 at 850 K leading to ZT of 0.024 at this temperature, indicating that hole-doped perovskite-type iron oxide is a good candidate high-temperature thermoelectric p-type oxide.

Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

DOE PAGES

Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; ...

2014-12-21

In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K -1 m -1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constantsmore » were measured, which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K -1 m -1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.« less

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

New device architecture of a thermoelectric energy conversion for recovering low-quality heat

NASA Astrophysics Data System (ADS)

Kim, Hoon; Park, Sung-Geun; Jung, Buyoung; Hwang, Junphil; Kim, Woochul

2014-03-01

Low-quality heat is generally discarded for economic reasons; a low-cost energy conversion device considering price per watt, /W, is required to recover this waste heat. Thin-film based thermoelectric devices could be a superior alternative for this purpose, based on their low material consumption; however, power generated in conventional thermoelectric device architecture is negligible due to the small temperature drop across the thin film. To overcome this challenge, we propose new device architecture, and demonstrate approximately 60 Kelvin temperature differences using a thick polymer nanocomposite. The temperature differences were achieved by separating the thermal path from the electrical path; whereas in conventional device architecture, both electrical charges and thermal energy share same path. We also applied this device to harvest body heat and confirmed its usability as an energy conversion device for recovering low-quality heat.

Prospects for Engineering Thermoelectric Properties in La1/3NbO3 Ceramics Revealed via Atomic-Level Characterization and Modeling.

PubMed

Kepaptsoglou, Demie; Baran, Jakub D; Azough, Feridoon; Ekren, Dursun; Srivastava, Deepanshu; Molinari, Marco; Parker, Stephen C; Ramasse, Quentin M; Freer, Robert

2018-01-02

A combination of experimental and computational techniques has been employed to explore the crystal structure and thermoelectric properties of A-site-deficient perovskite La 1/3 NbO 3 ceramics. Crystallographic data from X-ray and electron diffraction confirmed that the room temperature structure is orthorhombic with Cmmm as a space group. Atomically resolved imaging and analysis showed that there are two distinct A sites: one is occupied with La and vacancies, and the second site is fully unoccupied. The diffuse superstructure reflections observed through diffraction techniques are shown to originate from La vacancy ordering. La 1/3 NbO 3 ceramics sintered in air showed promising high-temperature thermoelectric properties with a high Seebeck coefficient of S 1 = -650 to -700 μV/K and a low and temperature-stable thermal conductivity of k = 2-2.2 W/m·K in the temperature range of 300-1000 K. First-principles electronic structure calculations are used to link the temperature dependence of the Seebeck coefficient measured experimentally to the evolution of the density of states with temperature and indicate possible avenues for further optimization through electron doping and control of the A-site occupancies. Moreover, lattice thermal conductivity calculations give insights into the dependence of the thermal conductivity on specific crystallographic directions of the material, which could be exploited via nanostructuring to create high-efficiency compound thermoelectrics.

Ionic thermoelectric gating organic transistors

PubMed Central

Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

2017-01-01

Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

Transport and thermoelectric properties of the LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Jost, A.; Guduru, V. K.; Wiedmann, S.; Maan, J. C.; Zeitler, U.; Wenderich, S.; Brinkman, A.; Hilgenkamp, H.

2015-01-01

The transport and thermoelectric properties of the interface between SrTiO3 and a 26-monolayer-thick LaAlO3 layer grown at high oxygen pressure have been investigated at temperatures from 4.2 to 100 K and in magnetic fields up to 18 T. For T >4.2 K , two different electronlike charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a nondegenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering.

High Electron Mobility and Disorder Induced by Silver Ion Migration Lead to Good Thermoelectric Performance in the Argyrodite Ag 8 SiSe 6

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heep, Barbara K.; Weldert, Kai S.; Krysiak, Yasar

Superionic chalcopyrites have recently attracted interest in their use as potential thermoelectric materials because of extraordinary low thermal conductivities. To overcome long-term stability issues in thermoelectric generators using superionic materials at evaluated temperatures, materials need to be found that show good thermoelectric performance at moderate temperatures. Here, we present the structural and thermoelectric properties of the argyrodite Ag 8SiSe 6, which exhibits promising thermoelectric performance close to room temperature.

Thermoelectric refrigeration for temperatures below 100 K: A study of titanium sesquioxide

NASA Technical Reports Server (NTRS)

Redebaugh, R.; Linenberger, D.; Spellicy, E.

1982-01-01

Previous measurements of the specific heat of V-doped Ti2O3 at low temperatures were explained by a model which also suggested the material would have a high thermoelectric figure-of-merit. The sample preparation, experimental apparatus, and the results of measurements on the thermal conductivity, thermoelectric power, and electrical resistivity of a single crystal Ti2O3 - 4% V sample are described. The results are used to derive the thermoelectric figure-of-merit between 5 and 300 K. The figure-of-merit is much smaller than expected and of little practical value because of the very high phonon thermal conductivity.

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Santos, R.; Loureiro, J.; Nogueira, A.; Elangovan, E.; Pinto, J. V.; Veiga, J. P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I.

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m)-1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Thermoelectric transport properties of high mobility organic semiconductors

NASA Astrophysics Data System (ADS)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

NASA Astrophysics Data System (ADS)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Thermoelectricity for future sustainable energy technologies

NASA Astrophysics Data System (ADS)

Weidenkaff, Anke

2017-07-01

Thermoelectricity is a general term for a number of effects describing the direct interconversion of heat and electricity. Thermoelectric devices are therefore promising, environmental-friendly alternatives to conventional power generators or cooling units. Since the mid-90s, research on thermoelectric properties and their applications has steadily increased. In the course of years, the development of high-temperature resistant TE materials and devices has emerged as one of the main areas of interest focusing both on basic research and practical applications. A wide range of innovative and cost-efficient material classes has been studied and their properties improved. This has also led to advances in synthesis and metrology. The paper starts out with thermoelectric history, basic effects underlying thermoelectric conversion and selected examples of application. The main part focuses on thermoelectric materials including an outline of the design rules, a review on the most common materials and the feasibility of improved future high-temperature thermoelectric converters.

Tuning the thermoelectric properties of YNiBi half-Heusler alloy

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Kumar, Pradeep

2018-04-01

A detail comparison between the results obtained for the electronic and transport properties of YNiBi half-Heusler alloy by local density approximation (LDA) and generalized gradient approximation (GGA) functionals with and without spin–orbit coupling (SOC) is presented. In the presence of SOC both functionals provide ∼30% smaller band gap. The transport coefficients computed without SOC confirm that YNiBi is a promising p-type thermoelectric material. However, with SOC at higher temperature, Seebeck coefficient was found to be negative because of the bipolar effects. Without SOC the computed power factor (PF) is found to be closer to the experimental value, while in the presence of SOC we have obtained comparatively smaller PF. No importance of SOC has been observed in the calculations of transport properties of the compound. The appropriate Ti doping in place of Y is predicted to significantly enhance the thermoelectric properties of YNiBi compound.

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures.

PubMed

Wang, Tong; Puchtler, Tim J; Patra, Saroj K; Zhu, Tongtong; Jarman, John C; Oliver, Rachel A; Schulz, Stefan; Taylor, Robert A

2017-09-21

We report the successful realisation of intrinsic optical polarisation control by growth, in solid-state quantum dots in the thermoelectrically cooled temperature regime (≥200 K), using a non-polar InGaN system. With statistically significant experimental data from cryogenic to high temperatures, we show that the average polarisation degree of such a system remains constant at around 0.90, below 100 K, and decreases very slowly at higher temperatures until reaching 0.77 at 200 K, with an unchanged polarisation axis determined by the material crystallography. A combination of Fermi-Dirac statistics and k·p theory with consideration of quantum dot anisotropy allows us to elucidate the origin of the robust, almost temperature-insensitive polarisation properties of this system from a fundamental perspective, producing results in very good agreement with the experimental findings. This work demonstrates that optical polarisation control can be achieved in solid-state quantum dots at thermoelectrically cooled temperatures, thereby opening the possibility of polarisation-based quantum dot applications in on-chip conditions.

Synthesis and Characterization of Thermoelectric Oxides at Macro- and Nano-scales

NASA Astrophysics Data System (ADS)

Ma, Feiyue

Thermoelectric materials can directly convert a temperature difference into electrical voltage and vice versa. Due to this unique property, thermoelectric materials are widely used in industry and scientific laboratories for temperature sensing and thermal management applications. Waste heat harvesting, another potential application of thermoelectric materials, has long been limited by the low conversion efficiency of the materials. Potential high temperature applications, such as power plant waste heat harvesting and combustion engine exhaust heat recovery, make thermoelectric oxides a very promising class of thermoelectric materials. In this thesis, the synthesis and characterization of thermoelectric oxide materials are explored. In the first part of this thesis, the measurement methodologies and instrumentation processes employed to investigate different thermoelectric properties, such as the Seebeck coefficient and carrier concentration at the bulk scale and the thermal conductivity at the nanoscale, are detailed. Existing scientific and engineering challenges associated with these measurements are also reviewed. To overcome such problems, original parts and methodologies have been designed. Three fully functional systems were ultimately developed for the characterization of macroscale thermoelectric properties as well as localized thermal conductivity. In the second part of the thesis, the synthesis of NaxCo 2O4, a thermoelectric oxide material, is discussed. Modification of both composition and structure were carried out so as to optimize the thermoelectric performance of NaxCo2O4. Nanostructuring methods, such as ball milling, electrospinning, auto-combustion synthesis, and core-shell structure fabrication, have been developed to refine the grain size of NaxCo2O4 in order to reduce its thermal conductivity. However, the structure of the nanostructured materials is very unstable at high temperature and limited improvement on thermoelectric performance is

TiO x -Based Thermoelectric Modules: Manufacturing, Properties, and Operational Behavior

NASA Astrophysics Data System (ADS)

Martin, Hans-Peter; Pönicke, Andreas; Kluge, Martin; Sichert, Ina; Rost, Axel; Conze, Susan; Wätzig, Katja; Schilm, Jochen; Michaelis, Alexander

2016-03-01

Substoichiometric titanium oxides are attractive thermoelectric materials for high-temperature modules. Their advantages are availability, economy, and safety. This paper gives results of thermoelectric data on scale-up titanium suboxides, manufacturing technologies of TiO x modules, glass coating as an option for oxidation protection, and test results of TiO x modules. The thermoelectric efficiency of TiO x is low compared with established thermoelectric materials. However, TiO x is very attractive for economic reasons, and there are still expectations for efficiency rise by modification of the material's microstructure. TiO x can be produced in large quantities of several tens of kilograms. A manufacturing process for TiO x -based unileg n-type modules has been established, including all technological steps. The design of the TiO x -based modules was optimized for the thermoelectric conversion process and thermal robustness. A test device was used for experimental analysis with maximum temperature of 600°C at the hot side and 100°C at the cold side. This initial test revealed similar power output and internal resistance of all fabricated modules. Furthermore, thermal cycles with increasing and decreasing temperatures at the hot side were realized to characterize the reliability and stability of the modules. Additionally, modules were tested in a hot gas test rig to simulate the thermal stresses during power generation in the exhaust line of a passenger car.

Effect of rare-earth doping on the thermoelectric and electrical transport properties of the transition metal pentatelluride hafnium pentatelluride

NASA Astrophysics Data System (ADS)

Lowhorn, Nathan Dane

The transition metal pentatellurides HfTe5 and ZrTe5 have been observed to possess interesting electrical transport properties. High thermopower and low resistivity values result in high thermoelectric power factors. In addition, they possess anomalous transport behavior. The temperature dependence of the resistivity is semimetallic except for a large resistive peak as a function of temperature at around 75 K for HfTe5 and 145 K for ZrTe5. At a temperature corresponding to this peak, the thermopower crosses zero as it moves from large positive values to large negative values. This behavior has been found to be extremely sensitive to changes in the energetics of the system through influences such as magnetic field, stress, pressure, microwave radiation, and substitutional doping. This behavior has yet to be fully explained. Previous doping studies have shown profound and varied effects on the anomalous transport behavior. In this study we investigate the effect on the electrical resistivity, thermopower, and magnetoresistance of doping HfTe5 with rare-earth elements. We have grown single crystals of nominal Hf0.75RE 0.25Te5 where RE = Ce, Pr, Nd, Sm, Gd, Tb, Dy, and Ho. Electrical resistivity and thermopower data from about 10 K to room temperature are presented and discussed in terms of the thermoelectric properties. Doping with rare-earth elements of increasing atomic number leads to a systematic suppression of the anomalous transport behavior. Rare-earth doping also leads to an enhancement of the thermoelectric power factor over that of previously studied pentatellurides and the commonly used thermoelectric material Bi2Te3. For nominal Hf0.75Nd0.25Te5 and Hf0.75 Sm0.25Te5, values more than a factor of 2 larger than that Bi2Te3 are observed. In addition, suppression of the anomalous transport behavior leads to a suppression of the large magnetoresistive effect observed in the parent compounds. Rare-earth doping of HfTe5 has a profound impact on the anomalous

Ambient temperature thermoelectric performance of thermally evaporated p-type Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-04-01

Bismuth antimony telluride (BST) compounds have shown a promising performance in low to medium temperature thermoelectric (TE) conversion. One such composition, Bi1.2Sb0.8Te3, was synthesized by melting elemental entities and thin films of the as-synthesized material were deposited by thermal evaporation. X-Ray Diffraction analysis was conducted to study the crystallographic phases and other structural properties. Electrical conductivity and Seebeck coefficient measurements of as-prepared thin films were conducted in the temperature range from 303-363 K with a view to study ambient temperature application of the synthesized material for power generation in which an increasing trend was observed in the Seebeck coefficient. Electrical conductivity displayed a maximum value of 0.22 × 104 Sm-1 that was comparable to other Bi-Sb-Te compositions whereas power factor had its peak at 323 K. These trends observed in electrical properties indicate that synthesized material can be used for room temperature TE module fabrication.

Effect of Te substitution on crystal structure and transport properties of AgBiSe2 thermoelectric material.

PubMed

Goto, Y; Nishida, A; Nishiate, H; Murata, M; Lee, C H; Miura, A; Moriyoshi, C; Kuroiwa, Y; Mizuguchi, Y

2018-02-20

Silver bismuth diselenide (AgBiSe 2 ) has attracted much attention as an efficient thermoelectric material, owing to its intrinsically low lattice thermal conductivity. While samples synthesized using a solid-state reaction showed n-type conductivity and their dimensionless figure of merit (ZT) reached ∼1 by electron doping, theoretical calculations predicted that a remarkably high thermoelectric performance can be achieved in p-type AgBiSe 2 . In this paper, we present the effect of Te substitution on the crystal structure and thermoelectric properties of AgBiSe 2 , expecting p-type conductivity due to the shallowing of the energy potential of the valence band. We found that all AgBiSe 2-x Te x (x = 0-0.8) prepared using a solid-state reaction exhibits n-type conductivity from 300 to 750 K. The room-temperature lattice thermal conductivity decreased to as low as 0.3 W m -1 K -1 by Te substitution, which was qualitatively described using the point defect scattering model for the solid solution. We show that ZT reaches ∼0.6 for x = 0.8 at a broad range of temperatures, from 550 to 750 K, due to the increased power factor, although the carrier concentration has not been optimized yet.

Thermoelectric Properties and Thermal Tolerance of Indium Tin Oxide Nanowires.

PubMed

Hernandez, Jose A; Carpena Nunez, Jennifer; Fonseca, Luis F; Pettes, Michael Thompson; Yacaman, Miguel Jose; Benitez, Alfredo

2018-06-14

Single-crystalline indium tin oxide (ITO) nanowires were grown via a vapor-liquid-solid (VLS) method, with thermal tolerance up to ~1300°C. We report the electric and thermoelectric properties of the ITO nanowires before and after heat treatments and draw conclusions about their applicability as thermoelectric building blocks in nanodevices that can operate in high temperature conditions. The Seebeck coefficient and the thermal and electrical conductivities were measured in each individual nanowire by means of specialized micro-bridge thermometry devices. Measured data was analyzed and explained in terms of changes in charge carrier density, impurities and vacancies due to the thermal treatments. © 2018 IOP Publishing Ltd.

High-temperature thermoelectric properties of the double-perovskite ruthenium oxide (Sr1-xLax)2ErRuO6

NASA Astrophysics Data System (ADS)

Takahashi, Ryohei; Okazaki, Ryuji; Yasui, Yukio; Terasaki, Ichiro; Sudayama, Takaaki; Nakao, Hironori; Yamasaki, Yuichi; Okamoto, Jun; Murakami, Youichi; Kitajima, Yoshinori

2012-10-01

We have prepared polycrystalline samples of (Sr1-xLax)2ErRuO6 and (Sr1-xLax)2YRuO6, and have measured the resistivity, Seebeck coefficient, thermal conductivity, susceptibility, and x-ray absorption in order to evaluate the electronic states and thermoelectric properties of the doped double-perovskite ruthenates. We have observed a large Seebeck coefficient of -160 μV/K and a low thermal conductivity of 7 mW/cmK for x = 0.1 at 800 K in air. These two values are suitable for efficient oxide thermoelectrics, although the resistivity is still as high as 1 Ω cm. From the susceptibility and x-ray absorption measurements, we find that the doped electrons exist as Ru4+ in the low spin state. On the basis of the measured results, the electronic states and the conduction mechanism are discussed.

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6

PubMed Central

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing

2016-01-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high‐performance thermoelectrics is shown. Taking Ag8SnSe6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m−1 K−1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb‐doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT, but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements. PMID:27980995

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6.

PubMed

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing; Pei, Yanzhong

2016-11-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high-performance thermoelectrics is shown. Taking Ag 8 SnSe 6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m -1 K -1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb-doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT , but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements.

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE PAGES

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.; ...

2017-02-02

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Perovskite- and Heusler based materials for thermoelectric converters

NASA Astrophysics Data System (ADS)

Weidenkaff, Anke

2015-03-01

The broad application of thermoelectric converters in future energy technologies requires the development of active, stable, low cost and sustainable materials. Semiconductors based on perovskite and heusler structures show substantial potential for thermoelectric energy conversion processes. Their good performance can be explained based on their suitable band structure, adjusted charge carrier density, mass and mobility, limited phonon transport, electron filtering possibilities, strongly correlated electronic systems, etc. These properties are widely tuneable by following theoretical concepts and a deep composition-structure-property understanding to change the composition, structure and size of the crystallites in innovative scalable synthesis procedures. Improved thermoelectric materials are developed, synthesised and tested in diverse high temperature applications to improve the efficiency and energy density of the thermoelectric conversion process. The lecture will provide a summary on the field of advanced perovskite-type ceramics and Heusler compounds gaining importance for a large number of future energy technologies.

Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

PubMed

Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

2015-04-03

Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications.

A Chemical, High-Temperature Way to Ag1.9Te via Quasi-Topotactic Reaction of Stuetzite-type Ag1.54Te: Structural and Thermoelectric Properties.

PubMed

Baumer, Franziska; Nilges, Tom

2017-11-20

Semiconducting silver tellurides gained reasonable interest in the past years due to its thermoelectric, magneto-caloric, and nonlinear optic properties. Nanostructuring has been frequently used to address quantum-confinement effects of minerals and synthetic compounds in the Ag-Te system. Here, we report on the structural, thermal, and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te. By a quasi-topotactic reaction upon tellurium evaporation Ag 1.54 Te can be transferred to Ag 1.9 Te after heat treatment. Crystal structures, thermal and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te were determined by ex situ and in situ experiments. This method represents an elegant chemical way to Ag 1.9 Te, which was so far only accessible electrochemically via electrochemical removal of silver from the mineral hessite (Ag 2 Te). The mixed conductors show reasonable high total electric conductivities, very low thermal conductivities, and large Seebeck coefficients, which result in a significant high thermoelectric figure of 0.57 at 680 K.

Thermoelectric properties of cobalt antimonide>-based skutterudites

NASA Astrophysics Data System (ADS)

Yang, Jian

Solid state cooling and power generation based on thermoelectric principles are regarded as one of the technologies with the potential of solving the current energy crisis. Thermoelectric devices could be widely used in waste heat recovery, small scale power generation and refrigeration. It has no moving parts and is environmental friendly. The limitation to its application is due to its low efficiency. Most of the current commercialized thermoelectric materials have figure of merit (ZT) around 1. To be comparable with kitchen refrigerator, ZT≃ 3 is required at room temperature. Skutterudites have emerged as member of the novel materials, which potentially have a higher ZT. In the dissertation, my investigation will be focused on the optimization of CoSb3-based skutterudites. Starting with Co and Sb elements, CoSb3 will form through a high energy ball mill. Unfortunately, even after 20 hours, only a small percentage of the powders have transformed in into CoSb3. Then the powders will be compacted into bulk samples by DC-controlled hot press. CoSb3 single phase will form after press. Characterization of the structure and thermoelectric properties will be presented with details. The effects of synthesis conditions on thermoelectric properties of skutterudites were studied and discussed. Several possible methods of improving the ZT of N type skutterudites were applied. The highest obtained ZT thus far is ˜1.2 from Yb doped CoSb3. For a group of samples with nominal composition YbxCo4Sb12, the increased Yb concentration in our samples not only enhanced the power factor due to electron doping effect but also decreased the thermal conductivity due to a stronger rattling effect. In addition, the increased grain boundary density per unit volume due to the small grains in our bulk skutterudite materials may have also helped to enhance the phonon scattering and thus to reduce the thermal conductivity. Single and double doping methods with different combinations were also

Fabrication and thermoelectric properties of Ca-Co-O ceramics with negative Seebeck coefficient

NASA Astrophysics Data System (ADS)

Gong, Chunlin; Shi, Zongmo; Zhang, Yi; Chen, Yongsheng; Hu, Jiaxin; Gou, Jianjun; Qin, Mengjie; Gao, Feng

2018-06-01

Ca-Co-O ceramics is typically p-type thermoelectric materials and possesses positive Seebeck coefficient. In this work, n-type Ca-Co-O ceramics with negative Seebeck coefficients were fabricated by sintering and annealing in a reducing atmosphere. The microstructures and thermoelectric properties of the ceramics were investigated. The results show that the carrier concentration and the carrier mobility dramatically increase after the samples were annealed in the reducing atmosphere. The electrical resistivity increases from 0.0663 mΩ·cm to 0.2974 mΩ·cm, while the negative Seebeck coefficients varies from -24.9 μV/K to -56.3 μV/K as the temperature increases from 323 K to 823 K, and the maximum power factor (PF, 1.536 mW/m·K2) is obtained at 623 K. The samples have n-type thermoelectric properties with large PF values and ZT value (ZT = 0.39, 823 K). The unusual results will pave a new way for studying Ca-Co-O thermoelectric ceramics.

High temperature material interactions of thermoelectric systems using silicon germanium.

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1973-01-01

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k-cubic spin-orbit coupling

NASA Astrophysics Data System (ADS)

Mawrie, Alestin; Verma, Sonu; Kanti Ghosh, Tarun

2017-11-01

We investigate the effect of k-cubic spin-orbit interaction on the electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions θ^\\prime = (2n+1)π/3 with n=1, 2, 3 . We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of k-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of a quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in the low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant.

Induction annealing and subsequent quenching: effect on the thermoelectric properties of boron-doped nanographite ensembles.

PubMed

Xie, Ming; Lee, Chee Huei; Wang, Jiesheng; Yap, Yoke Khin; Bruno, Paola; Gruen, Dieter; Singh, Dileep; Routbort, Jules

2010-04-01

Boron-doped nanographite ensembles (NGEs) are interesting thermoelectric nanomaterials for high temperature applications. Rapid induction annealing and quenching has been applied to boron-doped NGEs using a relatively low-cost, highly reliable, laboratory built furnace to show that substantial improvements in thermoelectric power factors can be achieved using this methodology. Details of the design and performance of this compact induction furnace as well as results of the thermoelectric measurements will be reported here.

Thermoelectric properties of a trilayer graphene nanoribbon

NASA Astrophysics Data System (ADS)

Orellana, Pedro; Cortes, Natalia; Rosales, Luis; Pacheco, Monica; Chico, Leonor

2015-03-01

In this work the electronic and thermoelectric properties of a three-layer graphene with AAA stacking type are studied. By using a tight-binding model analytical expressions for the transmission and density of states are obtained. Thermoelectric properties are analyzed by numerical integration and results for thermopower and figure of merit, electronic conductance and thermal conductance are obtained. The results show that the interference effects present in this system, like Fano effect, directly affect the behavior of these thermoelectric properties and as well as the Wiedemann-Franz law. There is an enhancement of the thermopower of the system and a violation of the Wiedemann-Franz law in the region of energies close the Fano antiresonances and this has as a consequence an enhancement of the figure of merit of the system. FONDECYT 1140571, 1140388, CONICYT ACT 1204, DGIP/ USM internal Grant 11.14.68.

Process dependent thermoelectric properties of EDTA assisted bismuth telluride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulsi, Chiranjit; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com; Kargupta, Kajari

2016-04-13

Comparison between the structure and thermoelectric properties of EDTA (Ethylene-diamine-tetra-acetic acid) assisted bismuth telluride prepared by electrochemical deposition and hydrothermal route is reported in the present work. The prepared samples have been structurally characterized by high resolution X-ray diffraction spectra (HRXRD), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopic images (HRTEM). Crystallite size and strain have been determined from Williamson-Hall plot of XRD which is in conformity with TEM images. Measurement of transport properties show sample in the pellet form (S{sub 1}) prepared via hydrothermal route has higher value of thermoelectric power (S) than the electrodepositedmore » film (S{sub 2}). But due to a substantial increase in the electrical conductivity (σ) of the film (S{sub 2}) over the pellet (S{sub 1}), the power factor and the figure of merit is higher for sample S{sub 2} than the sample S{sub 1} at room temperature.« less

Enhanced thermoelectric properties of graphene oxide patterned by nanoroads.

PubMed

Zhou, Si; Guo, Yu; Zhao, Jijun

2016-04-21

The thermoelectric properties of two-dimensional (2D) materials are of great interest for both fundamental science and device applications. Graphene oxide (GO), whose physical properties are highly tailorable by chemical and structural modifications, is a potential 2D thermoelectric material. In this report, we pattern nanoroads on GO sheets with epoxide functionalization, and investigate their ballistic thermoelectric transport properties based on density functional theory and the nonequilibrium Green's function method. These graphene oxide nanoroads (GONRDs) are all semiconductors with their band gaps tunable by the road width, edge orientation, and the structure of the GO matrix. These nanostructures show appreciable electrical conductance at certain doping levels and enhanced thermopower of 127-287 μV K(-1), yielding a power factor 4-22 times of the graphene value; meanwhile, the lattice thermal conductance is remarkably reduced to 15-22% of the graphene value; consequently, attaining the figure of merit of 0.05-0.75. Our theoretical results are not only helpful for understanding the thermoelectric properties of graphene and its derivatives, but also would guide the theoretical design and experimental fabrication of graphene-based thermoelectric devices of high performance.

Impacts of doping on thermal and thermoelectric properties of nanomaterials.

PubMed

Zhang, Gang; Li, Baowen

2010-07-01

Thermal transport in nanoscale structures has attracted an increasing interest in the last two decades. On the one hand, the low dimensional nanostructured materials are platforms for testing novel phonon transport theories. On the other hand, nanomaterials are promising candidates for nanoscale on-chip coolers. This review is focused on the thermal conductance, thermoelectric property, and impacts of doping on these properties.

Thermoelectric properties of doped BaHfO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com; Bhamu, K. C.; Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. Themore » doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.« less

Measuring Thermoelectric Properties Automatically

NASA Technical Reports Server (NTRS)

Chmielewski, A.; Wood, C.

1986-01-01

Microcomputer-controlled system speeds up measurements of Hall voltage, Seebeck coefficient, and thermal diffusivity in semiconductor compounds for thermoelectric-generator applications. With microcomputer system, large data base of these parameters gathered over wide temperature range. Microcomputer increases measurement accuracy, improves operator productivity, and reduces test time.

Thermoelectric transport in Cu7PSe6 with high copper ionic mobility.

PubMed

Weldert, Kai S; Zeier, Wolfgang G; Day, Tristan W; Panthöfer, Martin; Snyder, G Jeffrey; Tremel, Wolfgang

2014-08-27

Building on the good thermoelectric performances of binary superionic compounds like Cu2Se, Ag2Se and Cu2S, a better and more detailed understanding of phonon-liquid electron-crystal (PLEC) thermoelectric materials is desirable. In this work we present the thermoelectric transport properties of the compound Cu7PSe6 as the first representative of the class of argyrodite-type ion conducting thermoelectrics. With a huge variety of possible compositions and high ionic conductivity even at room temperature, the argyrodites represent a very good model system to study structure-property relationships for PLEC thermoelectric materials. We particularly highlight the extraordinary low thermal conductivity of Cu7PSe6 below the glass limit, which can be associated with the molten copper sublattice leading to a softening of phonon modes.

Thermoelectric and transport properties of sintered n-type K{sub 8}Ba{sub 16}Ga{sub 40}Sn{sub 96} with type-II clathrate structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koda, Shota; Kishimoto, Kengo, E-mail: kkishi@yamaguchi-u.ac.jp; Asada, Hironori

This clathrate had a maximum dimensionless figure-of-merit, ZT, of 0.93 at 637 K, which was slightly higher than that of 0.83 for the sintered type-VIII clathrate Ba{sub 8}Ga{sub 16}Sn{sub 30}. We investigated the high-temperature thermoelectric properties, transport properties, electronic structures, and thermal stabilities of the clathrates. The type-II clathrate was found to be superior to the type-VIII clathrate as a thermoelectric material; it had a high thermal stability and melting point, 859 K, high mobility, 141 cm{sup 2}V{sup −1}s{sup −1} at 300 K, because of its low inertial mass, and low high-temperature lattice thermal conductivity, approximately 4 mW cm{sup −1}K{sup −1}, resulting frommore » a larger unit cell and weaker bipolar thermal conduction. We discuss these properties in terms of the electronic structure and the differences between the two types of clathrate.« less

Structural variations in indium tin tellurides and their thermoelectric properties

NASA Astrophysics Data System (ADS)

Neudert, Lukas; Schwarzmüller, Stefan; Schmitzer, Silvia; Schnick, Wolfgang; Oeckler, Oliver

2018-02-01

Indium-doped tin tellurides are promising and thoroughly investigated thermoelectric materials. Due to the low solubility of In2Te3 in SnTe and vice versa, samples with the nominal composition (SnTe)3-3x(In2Te3)x with 0.136 ≤ x ≤ 0.75 consist of a defect-rocksalt-type Sn-rich and a defect-sphalerite-type In-rich phase which are endotaxially intergrown and form nanoscale heterostructures. Such nanostructures are kinetically inert and become more pronounced with increasing overall In content. The vacancies often show short-range ordering. These phenomena are investigated by temperature-dependent X-ray diffraction and HRTEM as well as STEM with element mapping by X-ray spectroscopy. The combination of real-structure effects leads to very low lattice thermal conductivity from room temperature up to 500 °C. Thermoelectric figures of merit ZT of heterostructured materials with x = 0.136 reach ZT values up to 0.55 at 400 °C.

Superconducting thermoelectric generator

DOEpatents

Metzger, J.D.; El-Genk, M.S.

1994-01-01

Thermoelectricity is produced by applying a temperature differential to dissimilar electrically conducting or semiconducting materials, thereby producing a voltage that is proportional to the temperature difference. Thermoelectric generators use this effect to directly convert heat into electricity; however, presently-known generators have low efficiencies due to the production of high currents which in turn cause large resistive heating losses. Some thermoelectric generators operate at efficiencies between 4% and 7% in the 800{degrees} to 1200{degrees}C range. According to its major aspects and bradly stated, the present invention is an apparatus and method for producing electricity from heat. In particular, the invention is a thermoelectric generator that juxtaposes a superconducting material and a semiconducting material - so that the superconducting and the semiconducting materials touch - to convert heat energy into electrical energy without resistive losses in the temperature range below the critical temperature of the superconducting material. Preferably, an array of superconducting material is encased in one of several possible configurations within a second material having a high thermal conductivity, preferably a semiconductor, to form a thermoelectric generator.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

In-situ thermoelectric temperature monitoring and "Closed-loop integrated control" system for concentrator photovoltaic-thermoelectric hybrid receivers

NASA Astrophysics Data System (ADS)

Rolley, Matthew H.; Sweet, Tracy K. N.; Min, Gao

2017-09-01

This work demonstrates a new technique that capitalizes on the inherent flexibility of the thermoelectric module to provide a multifunctional platform, and exhibits a unique advantage only available within CPV-TE hybrid architectures. This system is the first to use the thermoelectric itself for hot-side temperature feedback to a PID control system, needing no additional thermocouple or thermistor to be attached to the cell - eliminating shading, and complex mechanical designs for mounting. Temperature measurement accuracy and thermoelectric active cooling functionality is preserved. Dynamic "per-cell" condition monitoring and protection is feasible using this technique, with direct cell-specific temperature measurement accurate to 1°C demonstrated over the entire experimental range. The extrapolation accuracy potential of the technique was also evaluated.

Thermoelectric and phonon transport properties of two-dimensional IV-VI compounds.

PubMed

Shafique, Aamir; Shin, Young-Han

2017-03-30

We explore the thermoelectric and phonon transport properties of two-dimensional monochalcogenides (SnSe, SnS, GeSe, and GeS) using density functional theory combined with Boltzmann transport theory. We studied the electronic structures, Seebeck coefficients, electrical conductivities, lattice thermal conductivities, and figures of merit of these two-dimensional materials, which showed that the thermoelectric performance of monolayer of these compounds is improved in comparison compared to their bulk phases. High figures of merit (ZT) are predicted for SnSe (ZT = 2.63, 2.46), SnS (ZT = 1.75, 1.88), GeSe (ZT = 1.99, 1.73), and GeS (ZT = 1.85, 1.29) at 700 K along armchair and zigzag directions, respectively. Phonon dispersion calculations confirm the dynamical stability of these compounds. The calculated lattice thermal conductivities are low while the electrical conductivities and Seebeck coefficients are high. Thus, the properties of the monolayers show high potential toward thermoelectric applications.

Thermoelectric Study of Copper Selenide

NASA Astrophysics Data System (ADS)

Yao, Mengliang; Liu, Weishu; Ren, Zhifeng; Opeil, Cyril

2014-03-01

Nanostructuring has been shown to be an effective approach in reducing lattice thermal conductivity and improving the figure of merit of thermoelectric materials. Copper selenide is a layered structure material, which has a low thermal conductivity and p-type Seebeck coefficient at low temperatures. We have evaluated several hot-pressed, nanostructured copper selenide samples with different dopants for their thermoelectric properties. The phenomenon of the charge-density wave observed in the nanocomposite, resistivity, Seebeck, thermal conductivity and carrier mobility will be discussed. Funding for this research was provided by the Solid State Solar - Thermal Energy Conversion Center (S3TEC), an Energy Frontier Research Center sponsored by the DOE, Office of Basic Energy Science, Award No. DE-SC0001299/ DE-FG02-09ER46577.

Ba6-3 x Nd8+2 x Ti18O54 Tungsten Bronze: A New High-Temperature n-Type Oxide Thermoelectric

NASA Astrophysics Data System (ADS)

Azough, Feridoon; Freer, Robert; Yeandel, Stephen R.; Baran, Jakub D.; Molinari, Marco; Parker, Stephen C.; Guilmeau, Emmanuel; Kepaptsoglou, Demie; Ramasse, Quentin; Knox, Andy; Gregory, Duncan; Paul, Douglas; Paul, Manosh; Montecucco, Andrea; Siviter, Jonathan; Mullen, Paul; Li, Wenguan; Han, Guang; Man, Elena A.; Baig, Hasan; Mallick, Tapas; Sellami, Nazmi; Min, Gao; Sweet, Tracy

2016-03-01

Semiconducting Ba6-3 x Nd8+2 x Ti18O54 ceramics (with x = 0.00 to 0.85) were synthesized by the mixed oxide route followed by annealing in a reducing atmosphere; their high-temperature thermoelectric properties have been investigated. In conjunction with the experimental observations, atomistic simulations have been performed to investigate the anisotropic behavior of the lattice thermal conductivity. The ceramics show promising n-type thermoelectric properties with relatively high Seebeck coefficient, moderate electrical conductivity, and temperature-stable, low thermal conductivity; For example, the composition with x = 0.27 (i.e., Ba5.19Nd8.54Ti18O54) exhibited a Seebeck coefficient of S 1000K = 210 µV/K, electrical conductivity of σ 1000K = 60 S/cm, and thermal conductivity of k 1000K = 1.45 W/(m K), leading to a ZT value of 0.16 at 1000 K.

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

NASA Technical Reports Server (NTRS)

Vandersande, Jan W.; Mccormack, Joe; Zoltan, Andy; Farmer, John

1990-01-01

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xing, Guangzong; Sun, Jifeng; Li, Yuwei

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Thermoelectric properties of p-type cubic and rhombohedral GeTe

DOE PAGES

Xing, Guangzong; Sun, Jifeng; Li, Yuwei; ...

2018-05-21

Here, we investigate the electronic and thermoelectric properties of GeTe in both cubic and rhombohedral phases. We find that cubic GeTe has an electronic structure with a narrow band gap that is unfavorable at high temperature, where the cubic phase is normally stable. However, cubic GeTe has electronic features that may lead to p-type performance superior to the normal rhombohedral phase at lower temperature. This is explained in part by the combination of light and heavy band character that is very effective in obtaining high thermopower and conductivity. In addition, the valence band edge carrier pockets in cubic GeTe possessmore » the largest anisotropy among cubic IV-VI analogs. These effects are stronger than the effect of band convergence in the rhombohedral structure. The results suggest further study of stabilized cubic GeTe as a thermoelectric.« less

Improved performance characteristics of a high temperature superconductor bolometer using photo-thermoelectrical feedback

NASA Astrophysics Data System (ADS)

Kaila, M. M.; Russell, G. J.

2000-12-01

We have designed a liquid nitrogen cooled detector where a thermoelectric feedback is combined with electrothermal feedback to produce an improvement of three orders of magnitude in the response time of the detector. We have achieved this by considering a parallel resistance combination of thermoelectric and High Temperature Superconductor (HTSC) material legs of an approximate geometry 1mm /spl times/ 2 mm /spl times/ 1micron operated at 80K. One end of this thermocouple acts as the sensitive area where the radiation is absorbed. The other end remains unexposed and stays basically at substrate temperature. It is found that micron thick films in our bolometer produce characteristics very close to those found for nanometer thick films required in semiconductor detectors and Low Temperature Superconductor (LTSC) bolometers.

Effect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds.

PubMed

Dow, Hwan Soo; Kim, Woo Sik; Shin, Weon Ho

2018-02-08

We investigated the thermoelectric properties of the ternary half-Heusler compound, TiNiSn, when introducing C and N. The addition of C or N to TiNiSn leads to an enhanced power factor and a decreasing lattice thermal conductivity by point defect phonon scattering. The thermoelectric performances of TiNiSn alloys are significantly improved by adding 1 at. % TiN, TiC, and figure of merit ( ZT ) values of 0.43 and 0.34, respectively, can be obtained at 723 K. This increase in thermoelectric performance is very helpful in the commercialization of thermoelectric power generation in the mid-temperature range.

Phase-Defined van der Waals Schottky Junctions with Significantly Enhanced Thermoelectric Properties.

PubMed

Wang, Qiaoming; Yang, Liangliang; Zhou, Shengwen; Ye, Xianjun; Wang, Zhe; Zhu, Wenguang; McCluskey, Matthew D; Gu, Yi

2017-07-06

We demonstrate a van der Waals Schottky junction defined by crystalline phases of multilayer In 2 Se 3 . Besides ideal diode behaviors and the gate-tunable current rectification, the thermoelectric power is significantly enhanced in these junctions by more than three orders of magnitude compared with single-phase multilayer In 2 Se 3 , with the thermoelectric figure-of-merit approaching ∼1 at room temperature. Our results suggest that these significantly improved thermoelectric properties are not due to the 2D quantum confinement effects but instead are a consequence of the Schottky barrier at the junction interface, which leads to hot carrier transport and shifts the balance between thermally and field-driven currents. This "bulk" effect extends the advantages of van der Waals materials beyond the few-layer limit. Adopting such an approach of using energy barriers between van der Waals materials, where the interface states are minimal, is expected to enhance the thermoelectric performance in other 2D materials as well.

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Ishizawa, Mamoru; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

2018-02-01

We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s, and Bi and Cu deficiencies in the films.

Low-Temperature Properties of Silver

PubMed Central

Smith, David R.; Fickett, F. R.

1995-01-01

Pure silver is used extensively in the preparation of high-temperature superconductor wires, tapes, films, and other configurations in which the silver not only shields the superconducting material from the surrounding materials, but also provides a degree of flexibility and strain relief, as well as stabilization and low-resistance electrical contact. Silver is relatively expensive, but at this stage of superconductor development, its unique combination of properties seems to offer the only reasonable means of achieving usable lengths of conductor. In this role, the low-temperature physical (electrical, thermal, magnetic, optical) and mechanical properties of the silver all become important. Here we present a collection of properties data extracted from the cryogenic literature and, to the extent possible, selected for reliability. PMID:29151733

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

NASA Technical Reports Server (NTRS)

Vandersande, Jan W.; Wood, Charles; Draper, Susan

1987-01-01

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO₂.

PubMed

Stöcker, Thomas; Exner, Jörg; Schubert, Michael; Streibl, Maximilian; Moos, Ralf

2016-03-24

In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO₂ powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 µm were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO₂ films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO₂ up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO₂. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model.

Advanced high temperature thermoelectrics for space power

NASA Technical Reports Server (NTRS)

Lockwood, A.; Ewell, R.; Wood, C.

1981-01-01

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

Novel Transition Metal Compounds with Promising Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Caillat, T.; Borshchevsky, A.; Fleurial, J. -P.

1993-01-01

Progress in the search for new high temperature thermoelectric materials at the Jet Propulsion Laboratory is reviewed. Novel transition metal compounds were selected as potential new high performance thermoelectric materials and criteria of selection are presented and discussed. Samples of these new compounds were prepared at JPL by a variety of techniques. Encouraging experimental results obtained on several of these compounds are reported and show that they have the potential to be the next generation of thermoelectric materials.

Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng

2009-03-01

The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.

A Review on the Fabrication of Polymer-Based Thermoelectric Materials and Fabrication Methods

PubMed Central

Kamarudin, Muhammad Akmal; Sahamir, Shahrir Razey; Datta, Robi Shankar; Long, Bui Duc; Mohd Sabri, Mohd Faizul; Mohd Said, Suhana

2013-01-01

Thermoelectricity, by converting heat energy directly into useable electricity, offers a promising technology to convert heat from solar energy and to recover waste heat from industrial sectors and automobile exhausts. In recent years, most of the efforts have been done on improving the thermoelectric efficiency using different approaches, that is, nanostructuring, doping, molecular rattling, and nanocomposite formation. The applications of thermoelectric polymers at low temperatures, especially conducting polymers, have shown various advantages such as easy and low cost of fabrication, light weight, and flexibility. In this review, we will focus on exploring new types of polymers and the effects of different structures, concentrations, and molecular weight on thermoelectric properties. Various strategies to improve the performance of thermoelectric materials will be discussed. In addition, a discussion on the fabrication of thermoelectric devices, especially suited to polymers, will also be given. Finally, we provide the challenge and the future of thermoelectric polymers, especially thermoelectric hybrid model. PMID:24324378

Excellent Thermoelectric Properties in monolayer WSe2 Nanoribbons due to Ultralow Phonon Thermal Conductivity.

PubMed

Wang, Jue; Xie, Fang; Cao, Xuan-Hao; An, Si-Cong; Zhou, Wu-Xing; Tang, Li-Ming; Chen, Ke-Qiu

2017-01-25

By using first-principles calculations combined with the nonequilibrium Green's function method and phonon Boltzmann transport equation, we systematically investigate the influence of chirality, temperature and size on the thermoelectric properties of monolayer WSe 2 nanoribbons. The results show that the armchair WSe 2 nanoribbons have much higher ZT values than zigzag WSe 2 nanoribbons. The ZT values of armchair WSe 2 nanoribbons can reach 1.4 at room temperature, which is about seven times greater than that of zigzag WSe 2 nanoribbons. We also find that the ZT values of WSe 2 nanoribbons increase first and then decrease with the increase of temperature, and reach a maximum value of 2.14 at temperature of 500 K. It is because the total thermal conductance reaches the minimum value at 500 K. Moreover, the impact of width on the thermoelectric properties in WSe 2 nanoribbons is not obvious, the overall trend of ZT value decreases lightly with the increasing temperature. This trend of ZT value originates from the almost constant power factor and growing phonon thermal conductance.

Significant Enhancement in the Thermoelectric Properties of PEDOT:PSS Films through a Treatment with Organic Solutions of Inorganic Salts.

PubMed

Fan, Zeng; Du, Donghe; Yu, Zhimeng; Li, Pengcheng; Xia, Yijie; Ouyang, Jianyong

2016-09-07

Conducting polymers have promising thermoelectric application because they have many advantages including abundant elements, mechanical flexibility, and nontoxicity. The thermoelectric properties of conducting polymers strongly depend on their chemical structure and microstructure. Here, we report a novel and facile method to significantly enhance the thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) films through a treatment with organic solutions of inorganic salts. N,N-Dimethylformamide (DMF) and a common inorganic salt like zinc chloride (ZnCl2) are used as the solvent and solute of the solutions, respectively. The treatments can significantly increase both the Seebeck coefficient and electrical conductivity of the PSS films. The thermoelectric properties of the PSS films are sensitive to the experimental conditions, such as the salt concentration, treatment temperature, and the cation of the salts. After treatment at the optimal experimental conditions, the PSS films can exhibit a Seebeck coefficient of 26.1 μV/K and an electrical conductivity of over 1400 S/cm at room temperature. The corresponding power factor is 98.2 μW/(m·K(2)). The mechanism for the enhancement in the thermoelectric properties is attributed to the segregation of some PSSH chains from PSS and the conformation change of PEDOT chains as a result of the synergetic effects of inorganic salts and DMF.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is alsomore » reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.« less

Thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6) solid solution.

PubMed

Zevalkink, Alex; Swallow, Jessica; Ohno, Saneyuki; Aydemir, Umut; Bux, Sabah; Snyder, G Jeffrey

2014-11-14

Zintl phases are attractive for thermoelectric applications due to their complex structures and bonding environments. The Zintl compounds Ca(5)Al(2)In(x)Sb(6)and Ca(5)Al(2)In(x)Sb(6) have both been shown to have promising thermoelectric properties, with zT values of 0.6 and 0.7, respectively, when doped to control the carrier concentration. Alloying can often be used to further improve thermoelectric materials in cases when the decrease in lattice thermal conductivity outweighs reductions to the electronic mobility. Here we present the high temperature thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6)solid solution. Undoped and optimally Zn-doped samples were investigated. X-ray diffraction confirms that a full solid solution exists between the Al and In end-members. We find that the Al : In ratio does not greatly influence the carrier concentration or Seebeck effect. The primary effect of alloying is thus increased scattering of both charge carriers and phonons, leading to significantly reduced electronic mobility and lattice thermal conductivity at room temperature. Ultimately, the figure of merit is unaffected by alloying in this system, due to the competing effects of reduced mobility and lattice thermal conductivity.

Unified modelling of the thermoelectric properties in SrTiO3

NASA Astrophysics Data System (ADS)

Bouzerar, G.; Thébaud, S.; Adessi, Ch.; Debord, R.; Apreutesei, M.; Bachelet, R.; Pailhès, S.

2017-06-01

Thermoelectric materials are opening a promising pathway to address energy conversion issues governed by a competition between thermal and electronic transport. Improving the efficiency is a difficult task, a challenge that requires new strategies to unearth optimized compounds. We present a theory of thermoelectric transport in electron-doped SrTiO3, based on a realistic tight-binding model that includes relevant scattering processes. We compare our calculations against a wide panel of experimental data, both bulk and thin films. We find a qualitative and quantitative agreement over both a wide range of temperatures and carrier concentrations, from light to heavily doped. Moreover, the results appear insensitive to the nature of the dopant La, B, Gd and Nb. Thus, the quantitative success found in the case of SrTiO3, reveals an efficient procedure to explore new routes to improve the thermoelectric properties in oxides.

Towards High-Throughput, Simultaneous Characterization of Thermal and Thermoelectric Properties

NASA Astrophysics Data System (ADS)

Miers, Collier Stephen

The extension of thermoelectric generators to more general markets requires that the devices be affordable and practical (low $/Watt) to implement. A key challenge in this pursuit is the quick and accurate characterization of thermoelectric materials, which will allow researchers to tune and modify the material properties quickly. The goal of this thesis is to design and fabricate a high-throughput characterization system for the simultaneous characterization of thermal, electrical, and thermoelectric properties for device scale material samples. The measurement methodology presented in this thesis combines a custom designed measurement system created specifically for high-throughput testing with a novel device structure that permits simultaneous characterization of the material properties. The measurement system is based upon the 3o method for thermal conductivity measurements, with the addition of electrodes and voltage probes to measure the electrical conductivity and Seebeck coefficient. A device designed and optimized to permit the rapid characterization of thermoelectric materials is also presented. This structure is optimized to ensure 1D heat transfer within the sample, thus permitting rapid data analysis and fitting using a MATLAB script. Verification of the thermal portion of the system is presented using fused silica and sapphire materials for benchmarking. The fused silica samples yielded a thermal conductivity of 1.21 W/(m K), while a thermal conductivity of 31.2 W/(m K) was measured for the sapphire samples. The device and measurement system designed and developed in this thesis provide insight and serve as a foundation for the development of high throughput, simultaneous measurement platforms.

Unique magnetic and thermoelectric properties of chemically functionalized narrow carbon polymers.

PubMed

Zberecki, K; Wierzbicki, M; Swirkowicz, R; Barnaś, J

2017-02-01

We analyze magnetic, transport and thermoelectric properties of narrow carbon polymers, which are chemically functionalized with nitroxide groups. Numerical calculations of the electronic band structure and the corresponding transmission function are based on density functional theory. Transport and thermoelectric parameters are calculated in the linear response regime, with particular interest in charge and spin thermopowers (charge and spin Seebeck effects). Such nanoribbons are shown to have thermoelectric properties described by large thermoelectric efficiency, which makes these materials promising from the application point of view.

Superionic phase transition in silver chalcogenide nanocrystals realizing optimized thermoelectric performance.

PubMed

Xiao, Chong; Xu, Jie; Li, Kun; Feng, Jun; Yang, Jinlong; Xie, Yi

2012-03-07

Thermoelectric has long been recognized as a potentially transformative energy conversion technology due to its ability to convert heat directly into electricity. However, how to optimize the three interdependent thermoelectric parameters (i.e., electrical conductivity σ, Seebeck coefficient S, and thermal conductivity κ) for improving thermoelectric properties is still challenging. Here, we put forward for the first time the semiconductor-superionic conductor phase transition as a new and effective way to selectively optimize the thermoelectric power factor based on the modulation of the electric transport property across the phase transition. Ultra low value of thermal conductivity was successfully retained over the whole investigated temperature range through the reduction of grain size. As a result, taking monodisperse Ag(2)Se nanocrystals for an example, the maximized ZT value can be achieved around the temperature of phase transition. Furthermore, along with the effective scattering of short-wavelength phonons by atomic defects created by alloying, the alloyed ternary silver chalcogenide compounds, monodisperse Ag(4)SeS nanocrystals, show better ZT value around phase transition temperature, which is cooperatively contributed by superionic phase transition and alloying at nanoscale. © 2012 American Chemical Society

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

1999-01-01

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Thermoelectric properties of an interacting quantum dot based heat engine

NASA Astrophysics Data System (ADS)

Erdman, Paolo Andrea; Mazza, Francesco; Bosisio, Riccardo; Benenti, Giuliano; Fazio, Rosario; Taddei, Fabio

2017-06-01

We study the thermoelectric properties and heat-to-work conversion performance of an interacting, multilevel quantum dot (QD) weakly coupled to electronic reservoirs. We focus on the sequential tunneling regime. The dynamics of the charge in the QD is studied by means of master equations for the probabilities of occupation. From here we compute the charge and heat currents in the linear response regime. Assuming a generic multiterminal setup, and for low temperatures (quantum limit), we obtain analytical expressions for the transport coefficients which account for the interplay between interactions (charging energy) and level quantization. In the case of systems with two and three terminals we derive formulas for the power factor Q and the figure of merit Z T for a QD-based heat engine, identifying optimal working conditions which maximize output power and efficiency of heat-to-work conversion. Beyond the linear response we concentrate on the two-terminal setup. We first study the thermoelectric nonlinear coefficients assessing the consequences of large temperature and voltage biases, focusing on the breakdown of the Onsager reciprocal relation between thermopower and Peltier coefficient. We then investigate the conditions which optimize the performance of a heat engine, finding that in the quantum limit output power and efficiency at maximum power can almost be simultaneously maximized by choosing appropriate values of electrochemical potential and bias voltage. At last we study how energy level degeneracy can increase the output power.

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

PubMed Central

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-01-01

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

PubMed

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-07-29

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK(2) has been readily obtained for Tos thin films following this methodology.

Thermoelectric properties of 2H-CuGaO2 for device applications: A first principle TB-mBJ potential study

NASA Astrophysics Data System (ADS)

Bhamu, K. C.; Praveen, C. S.

2017-12-01

Here we report the structural, electronic, optical, and thermoelectric properties of delafossite type 2H-CuGaO2 using first principles calculations. The present calculation predict an indirect band gap of 1.20 eV and a direct band gap of 3.48 eV. A detailed analysis of the electronic structure is provided based on atom and orbital projected density of states. Frequency dependent dielectric functions, refractive index, and absorption coefficient as a function of photon energy are discussed. The thermoelectric properties with power factor, and the figure of merit are reported as a function of chemical potential in the region ± 0.195 (μ -EF) eV at constant temperature of 300 and 800 K. The thermoelectric properties shows that 2H-CuGaO2 could be potential candidate for engineering devises operating at high temperature for the chemical potential in the range of ± 0.055 (μ -EF) eV and beyond this range the thermoelectric performance of 2H-CuGaO2 get reduced.

Note: extraction of temperature-dependent interfacial resistance of thermoelectric modules.

PubMed

Chen, Min

2011-11-01

This article discusses an approach for extracting the temperature dependency of the electrical interfacial resistance associated with thermoelectric devices. The method combines a traditional module-level test rig and a nonlinear numerical model of thermoelectricity to minimize measurement errors on the interfacial resistance. The extracted results represent useful data to investigating the characteristics of thermoelectric module resistance and comparing performance of various modules. © 2011 American Institute of Physics

Low lattice thermal conductivity and good thermoelectric performance of cinnabar

NASA Astrophysics Data System (ADS)

Zhao, Yinchang; Dai, Zhenhong; Lian, Chao; Zeng, Shuming; Li, Geng; Ni, Jun; Meng, Sheng

2017-11-01

Based on the combination of first-principles calculations, Boltzmann transport equation, and electron-phonon interaction (EPI), we investigate the thermal and electronic transport properties of crystalline cinnabar (α -HgS ). The calculated lattice thermal conductivity κL is remarkably low, e.g., 0.60 Wm-1K-1 at 300 K , which is about 30 % of the value for the typical thermoelectric material PbTe. Via taking fully into account the k dependence of the electron relaxation time computed from the EPI matrix, the accurate numerical results of thermopower S , electrical conductivity σ , and electronic thermal conductivity κE are obtained. The calculated power factor S2σ is relatively high while the value of κE is negligible, which, together with the fairly low κL, leads to a good thermoelectric performance in the n -type doped α -HgS , with the figure of merit z T even exceeding 1.4. Our analyses reveal that (i) the large weighted phase space and the quite low phonon group velocity result in the low κL, (ii) the presence of flat band around the Fermi level combined with the large band gap causes the high S , and (iii) the small electron linewidths of the conduction band lead to a large relaxation time and thus a relatively high σ . These results support that α -HgS is a potential candidate for thermoelectric applications.

Materials for high-temperature thermoelectric conversion

NASA Technical Reports Server (NTRS)

Feigelson, R. S.; Elwell, D.

1983-01-01

High boron materials of high efficiency for thermoelectric power generation and capable of prolonged operation at temperatures over 1200 C are discussed. Background theoretical studies indicated that the low carrier mobility of materials with beta boron and related structures is probably associated with the high density of traps. Experimental work was mainly concerned with silicon borides in view of promising data from European laboratories. A systematic study using structure determination and lattice constant measurements failed to confirm the existence of an SiBn phase. Only SiB6 and a solid solution of silicon in beta boron with a maximum solid solubility of 5.5-6 at % at 1650 C were found.

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k-cubic spin-orbit coupling.

PubMed

Mawrie, Alestin; Verma, Sonu; Ghosh, Tarun Kanti

2017-09-01

We investigate effect of <i>k</i>-cubic spin-orbit interaction on electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions θ = (2n+1)π/3 with n=1,2,3. We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of <i>k</i>-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant. © 2017 IOP Publishing Ltd.

Thermoelectric Properties of Lanthanum Sulfide

NASA Technical Reports Server (NTRS)

Wood, C.; Lockwood, R.; Parker, J. B.; Zoltan, A.; Zoltan, L. D.; Danielson, L.; Raag, V.

1987-01-01

Report describes measurement of Seebeck coefficient, electrical resistivity, thermal conductivity, and Hall effect in gamma-phase lanthanum sulfide with composition of La3-x S4. Results of study, part of search for high-temperature thermoelectric energy-conversion materials, indicate this sulfide behaves like extrinsic semiconductor over temperature range of 300 to 1,400 K, with degenerate carrier concentration controlled by stoichiometric ratio of La to S.

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

NASA Astrophysics Data System (ADS)

Lee, Heon-Bok; Yang, Hyun Jeong; We, Ju Hyung; Kim, Kukjoo; Choi, Kyung Cheol; Cho, Byung Jin

2011-05-01

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn x Sb1- x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn x Sb1- x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 1018/cm3. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm2, respectively, at Δ T = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb3 as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.

Thermoelectric and mechanical properties of multi-walled carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

NASA Astrophysics Data System (ADS)

Ren, Fei; Wang, Hsin; Menchhofer, Paul A.; Kiggans, James O.

2013-11-01

Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important to fabricate devices such as thermoelectric power generators and coolers. In this work, multiwalled carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young's and shear moduli of the composites were lower than the base material, while the Poisson's ratio was not affected by CNT doping.

Transport Properties of Bulk Thermoelectrics An International Round-Robin Study, Part I: Seebeck Coefficient and Electrical Resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hsin; Porter, Wallace D; Bottner, Harold

2013-01-01

Recent research and development of high temperature thermoelectric materials has demonstrated great potential of converting automobile exhaust heat directly into electricity. Thermoelectrics based on classic bismuth telluride have also started to impact the automotive industry by enhancing air conditioning efficiency and integrated cabin climate control. In addition to engineering challenges of making reliable and efficient devices to withstand thermal and mechanical cycling, the remaining issues in thermoelectric power generation and refrigeration are mostly materials related. The figure-of-merit, ZT, still needs to improve from the current value of 1.0 - 1.5 to above 2 to be competitive to other alternative technologies.more » In the meantime, the thermoelectric community could greatly benefit from the development of international test standards, improved test methods and better characterization tools. Internationally, thermoelectrics have been recognized by many countries as an important area for improving energy efficiency. The International Energy Agency (IEA) group under the implementing agreement for Advanced Materials for Transportation (AMT) identified thermoelectric materials as an important area in 2009. This paper is Part I of the international round-robin testing of transport properties of bulk thermoelectrics. The main focuses in Part I are on two electronic transport properties: Seebeck coefficient and electrical resistivity.« less

Modeling the Thermoelectric Properties of Ti5O9 Magnéli Phase Ceramics

NASA Astrophysics Data System (ADS)

Pandey, Sudeep J.; Joshi, Giri; Wang, Shidong; Curtarolo, Stefano; Gaume, Romain M.

2016-11-01

Magnéli phase Ti5O9 ceramics with 200-nm grain-size were fabricated by hot-pressing nanopowders of titanium and anatase TiO2 at 1223 K. The thermoelectric properties of these ceramics were investigated from room temperature to 1076 K. We show that the experimental variation of the electrical conductivity with temperature follows a non-adiabatic small-polaron model with an activation energy of 64 meV. In this paper, we propose a modified Heikes-Chaikin-Beni model, based on a canonical ensemble of closely spaced titanium t 2g levels, to account for the temperature dependency of the Seebeck coefficient. Modeling of the thermal conductivity data reveals that the phonon contribution remains constant throughout the investigated temperature range. The thermoelectric figure-of-merit ZT of this nanoceramic material reaches 0.3 K at 1076 K.

Thermoelectric properties of hole-doped SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Ferreiro-Vila, Elias; Sarantopoulos, Alexandros; Leboran, Victor; Bui, Cong-Tinh; Rivadulla, Francisco; Condense matter Chemistry Group Team

2014-03-01

Two dimensional conductors are expected to show an improved thermoelectric performance due the positive effect of quantum confinement on the thermoelectric power, and the decrease of thermal conductivity by interface boundary scattering. The recent report of a large increase of the thermoelectric power in quantum wells of Nb-doped SrTiO3 (STO) seems to be in agreement with this hypothesis. However, extrinsic effects like the existence of oxygen vacancies that propagate away from the interface cannot be ruled out, and the results are far from clear. Here we will show the thermoelectric properties (electrical conductivity, Seebeck coefficient, and Hall effect), of epitaxial thin-films of (La,Nb)-doped STO. The films have been deposited by PLD on different substrates (STO, LAO...) to study the effect of tensile/compressive stress on the thermoelectric properties of the system. The oxygen pressure during the deposition was carefully controlled to tune the amount of oxygen vacancies and to compare with the cation doping. We have performed a systematic study of the transport properties as a function of thickness and doping, which along with the effect of stress, allows to understand the effect of charge density and dimensionality in an oxide system with promising thermoelectric properties.

Side-Chain Effects on the Thermoelectric Properties of Fluorene-Based Copolymers.

PubMed

Liang, Ansheng; Zhou, Xiaoyan; Zhou, Wenqiao; Wan, Tao; Wang, Luhai; Pan, Chengjun; Wang, Lei

2017-09-01

Three conjugated polymers with alkyl chains of different lengths are designed and synthesized, and their structure-property relationship as organic thermoelectric materials is systematically elucidated. All three polymers show similar photophysical properties, thermal properties, and mechanical properties; however, their thermoelectric performance is influenced by the length of their side chains. The length of the alkyl chain significantly influences the electrical conductivity of the conjugated polymers, and polymers with a short alkyl chain exhibit better conductivity than those with a long alkyl chain. The length of the alkyl chain has little effect on the Seebeck coefficient. Only a slight increase in the Seebeck coefficient is observed with the increasing length of the alkyl chain. The purpose of this study is to provide comprehensive insight into fine-tuning the thermoelectric properties of conjugated polymers as a function of side-chain engineering, thereby providing a novel perspective into the design of high-performance thermoelectric conjugated polymers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zheng; Lü, Tie-Yu; Wang, Hui-Qiong

We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature,more » indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.« less

Thermal Expansion Studies of Selected High Temperature Thermoelectric Materials

NASA Technical Reports Server (NTRS)

Ravi, Vilupanur; Firdosy, Samad; Caillat, Thierry; Brandon, Erik; Van Der Walde, Keith; Maricic, Lina; Sayir, Ali

2008-01-01

Radioisotope thermoelectric generators (RTGs) generate electrical power by converting the heat released from the nuclear decay of radioactive isotopes (typically plutonium-238) into electricity using a thermoelectric converter. RTGs have been successfully used to power a number of space missions and have demonstrated their reliability over an extended period of time (tens of years) and are compact, rugged, radiation resistant, scalable, and produce no noise, vibration or torque during operation. System conversion efficiency for state-of-practice RTGs is about 6% and specific power less than or equal to 5.1 W/kg. Higher specific power would result in more on-board power for the same RTG mass, or less RTG mass for the same on-board power. The Jet Propulsion Laboratory has been leading, under the advanced thermoelectric converter (ATEC) project, the development of new high-temperature thermoelectric materials and components for integration into advanced, more efficient RTGs. Thermoelectric materials investigated to date include skutterudites, the Yb14MnSb11 compound, and SiGe alloys. The development of long-lived thermoelectric couples based on some of these materials has been initiated and is assisted by a thermo-mechanical stress analysis to ensure that all stresses under both fabrication and operation conditions will be within yield limits for those materials. Several physical parameters are needed as input to this analysis. Among those parameters, the coefficient of thermal expansion (CTE) is critically important. Thermal expansion coefficient measurements of several thermoelectric materials under consideration for ATEC are described in this paper. The stress response at the interfaces in material stacks subjected to changes in temperature is discussed, drawing on work from the literature and project-specific tools developed here. The degree of CTE mismatch and the associated effect on the formation of stress is highlighted.

Band Structures and Transport Properties of High-Performance Half-Heusler Thermoelectric Materials by First Principles.

PubMed

Fang, Teng; Zhao, Xinbing; Zhu, Tiejun

2018-05-19

Half-Heusler (HH) compounds, with a valence electron count of 8 or 18, have gained popularity as promising high-temperature thermoelectric (TE) materials due to their excellent electrical properties, robust mechanical capabilities, and good high-temperature thermal stability. With the help of first-principles calculations, great progress has been made in half-Heusler thermoelectric materials. In this review, we summarize some representative theoretical work on band structures and transport properties of HH compounds. We introduce how basic band-structure calculations are used to investigate the atomic disorder in n-type M NiSb ( M = Ti, Zr, Hf) compounds and guide the band engineering to enhance TE performance in p-type Fe R Sb ( R = V, Nb) based systems. The calculations on electrical transport properties, especially the scattering time, and lattice thermal conductivities are also demonstrated. The outlook for future research directions of first-principles calculations on HH TE materials is also discussed.

Band Structures and Transport Properties of High-Performance Half-Heusler Thermoelectric Materials by First Principles

PubMed Central

Fang, Teng; Zhao, Xinbing

2018-01-01

Half-Heusler (HH) compounds, with a valence electron count of 8 or 18, have gained popularity as promising high-temperature thermoelectric (TE) materials due to their excellent electrical properties, robust mechanical capabilities, and good high-temperature thermal stability. With the help of first-principles calculations, great progress has been made in half-Heusler thermoelectric materials. In this review, we summarize some representative theoretical work on band structures and transport properties of HH compounds. We introduce how basic band-structure calculations are used to investigate the atomic disorder in n-type MNiSb (M = Ti, Zr, Hf) compounds and guide the band engineering to enhance TE performance in p-type FeRSb (R = V, Nb) based systems. The calculations on electrical transport properties, especially the scattering time, and lattice thermal conductivities are also demonstrated. The outlook for future research directions of first-principles calculations on HH TE materials is also discussed. PMID:29783759

Dispersion of Multi-Walled Carbon Nanotubes in Skutterudites and Its Effect on Thermoelectric and Mechanical Properties.

PubMed

Schmitz, Andreas; Schmid, Carolin; de Boor, Johannes; Müller, Eckhard

2017-03-01

Filled cobalt-antimony based skutterudites have proven themselves as very promising thermoelectric materials for generator applications in an intermediate temperature range between 400 and 800 K due to their high figure of merit. Besides the functional thermoelectric properties also the skutterudites’ mechanical properties play an important role to withstand external mechanical and internal thermomechanical loads during operation. Properties of interest are hardness as well as fracture toughness and resistance to fatigue. Carbon nano tubes are well known for their high tensile strength and may therefore be used to increase the mechanical strength of composite materials. Additionally, the thermoelectric properties of the composite material might benefit from the high electrical conductivity of carbon nano tubes and increased phonon scattering at interfaces between matrix and carbon nano tube. A main precondition for benefiting from embedded nano-tubes is to achieve a homogeneous distribution of the CNTs and good adhesion between carbon nano tube and matrix material. In this work we present the influence of the introduction of multi-walled carbon nano tubes on the thermoelectric and mechanical properties of p-type skutterudites Ce(0.14)La(0.06)Co(2)Fe(2)Sb(12). The influence of different carbon nano tube concentrations and preparation routes on the resulting composite material’s thermoelectric, mechanical and microstructural properties is studied. A reduction of electrical and thermal conductivity as well as fracture strength is observed with increasing carbon nano tube content which is attributed to strong agglomeration of the nano tubes. The results underline the pivotal role of a homogeneous distribution of the carbon nano tubes for improving the mechanical properties of skutterudites.

Influence of rare earth doping on thermoelectric properties of SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, C. L.; Li, Y.; Su, W. B.; Zhu, Y. H.; Li, J. C.; Mei, L. M.

2013-12-01

Thermoelectric properties of SrTiO3 ceramics, doped with different rare earth elements, were investigated in this work. It's found that the ionic radius of doping elements plays an important role on thermoelectric properties: SrTiO3 ceramics doped with large rare earth ions (such as La, Nd, and Sm) exhibit large power factors, and those doped with small ions (such as Gd, Dy, Er, and Y) exhibit low thermal conductivities. Therefore, a simple approach for enhancing the thermoelectric performance of SrTiO3 ceramics is proposed: mainly doped with large ions to obtain a large power factor and, simultaneously, slightly co-doped with small ions to obtain a low thermal conductivity. Based on this rule, Sr0.8La0.18Yb0.02TiO3 ceramics were prepared, whose ZT value at 1 023 K reaches 0.31, increasing by a factor of 19% compared with the single-doped counterpart Sr0.8La0.2TiO3 (ZT = 0.26).

Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO2

PubMed Central

Stöcker, Thomas; Exner, Jörg; Schubert, Michael; Streibl, Maximilian; Moos, Ralf

2016-01-01

In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO2 powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 µm were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO2 films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO2 up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO2. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model. PMID:28773351

Thermoelectric properties of PbTe with indium and bismuth secondary phase

NASA Astrophysics Data System (ADS)

Bali, A.; Chetty, R.; Mallik, R. C.

2016-06-01

Lead telluride (PbTe) with indium (In) and bismuth (Bi) as micrometer sized secondary phases dispersed throughout the bulk has been prepared by matrix encapsulation method. In and Bi are not found to substitute in PbTe as shown by Rietveld and room temperature Raman studies but are present as secondary phases. Increased values of temperature dependent electrical resistivity and Seebeck coefficient show the effect of interfaces on electronic transport. As expected, thermal conductivity is found to reduce on addition of secondary phases due to a reduced electronic contribution, further confirming that electron scattering at interfaces is more important than phonon scattering in such systems for thermoelectric properties. However, due to the reduction in the power factor of the In and Bi added samples from that of the parent PbTe, the overall thermoelectric figure of merit ( zT) does not increase beyond that of PbTe, for which the highest value of 0.7 is obtained at 778 K.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE PAGES

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-07-21

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi0.98B0.02

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hui; Lu, Xu; Morelli, Donald T.

Boron-added CoSi, CoSi 0.98B 0.02, possesses a very high thermoelectric power factor of 60 μW cm -1 K -2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms are intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi 0.98B 0.02 has been studied. Here we present a study of themore » substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands while Ge substitution only shifts the Fermi level upward into the conduction band. Lastly, our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

La-doped SrTiO3 films with large cryogenic thermoelectric power factors

NASA Astrophysics Data System (ADS)

Cain, Tyler A.; Kajdos, Adam P.; Stemmer, Susanne

2013-05-01

The thermoelectric properties at temperatures between 10 K and 300 K of La-doped SrTiO3 thin films grown by hybrid molecular beam epitaxy (MBE) on undoped SrTiO3 substrates are reported. Below 50 K, the Seebeck coefficients exhibit very large magnitudes due to the influence of phonon drag. Combined with high carrier mobilities, exceeding 50 000 cm2 V-1 s-1 at 2 K for the films with the lowest carrier densities, this leads to thermoelectric power factors as high as 470 μWcm-1 K-2. The results are compared with other promising low temperature thermoelectric materials and discussed in the context of coupling with phonons in the undoped substrate.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Thermoelectric Behavior of Low Thermal Conductivity Cu-based and IV-V Chalcogenides

NASA Astrophysics Data System (ADS)

Olvera, Alan Anthony

, to find a compatible material for p-type Cu2Se at high temperatures, a series of materials with the formula Cu4-xAgxSe2 were synthesized. It was found that the composition of Cu3AgSe2 ( x = 1) is a two-phase mixture at low temperatures but becomes a single-phase p-type superionic material above 440 K. On the other hand, CuAg 3Se2 (x = 3) remains a two-phase n-type mixture throughout the measured temperature range, contrary to reports of CuAg3Se2 as a single-phase high temperature material. The most important finding is the high temperature n-type behavior of CuAgSe (x = 2), which is the first instance of CuAgSe as an n-type superionic material above 470 K. It is proposed that off-stoichiometry leads to p-type behavior of CuAgSe. Moving to IV-V compounds, a detailed experimental and computational study of the material Pb7Bi4Se13 shows excellent thermoelectric properties for a non-optimized system. It behaves as an n-type material with a small band gap of about 0.23 eV, which is confirmed by band structure calculations and experimental results. It demonstrates ultralow thermal conductivity largely due to the complex atomic-scale structure and heavy constituent atoms. This results in a ZT of approximately 0.9 at 775 K, which is a promising value for further optimization. Additional results from CuSe2 structural template reactions show that several composite materials and new materials can be predicted and synthesized. This includes Cu2Se-Cu(Ga,Al)Se2 composites and new materials such as Cu(Zn,Ni)1.5Se2 and CuPb 0.75Se2. Further work in Sn-Bi-Se compounds is discussed due their complex crystal structure that may result in promising thermoelectric properties. Finally, the preliminary results of high entropy chalcogenides are presented with discussion on future development.

Thermoelectric plastics: from design to synthesis, processing and structure–property relationships

PubMed Central

Kroon, Renee; Mengistie, Desalegn Alemu; Kiefer, David; Hynynen, Jonna; Ryan, Jason D.; Yu, Liyang

2016-01-01

Thermoelectric plastics are a class of polymer-based materials that combine the ability to directly convert heat to electricity, and vice versa, with ease of processing. Potential applications include waste heat recovery, spot cooling and miniature power sources for autonomous electronics. Recent progress has led to surging interest in organic thermoelectrics. This tutorial review discusses the current trends in the field with regard to the four main building blocks of thermoelectric plastics: (1) organic semiconductors and in particular conjugated polymers, (2) dopants and counterions, (3) insulating polymers, and (4) conductive fillers. The design and synthesis of conjugated polymers that promise to show good thermoelectric properties are explored, followed by an overview of relevant structure–property relationships. Doping of conjugated polymers is discussed and its interplay with processing as well as structure formation is elucidated. The use of insulating polymers as binders or matrices is proposed, which permit the adjustment of the rheological and mechanical properties of a thermoelectric plastic. Then, nanocomposites of conductive fillers such as carbon nanotubes, graphene and inorganic nanowires in a polymer matrix are introduced. A case study examines poly(3,4-ethylenedioxythiophene) (PEDOT) based materials, which up to now have shown the most promising thermoelectric performance. Finally, a discussion of the advantages provided by bulk architectures e.g. for wearable applications highlights the unique advantages that thermoelectric plastics promise to offer. PMID:27385496

Enhancing the Thermoelectric Figure of Merit by Low-Dimensional Electrical Transport in Phonon-Glass Crystals.

PubMed

Mi, Xue-Ya; Yu, Xiaoxiang; Yao, Kai-Lun; Huang, Xiaoming; Yang, Nuo; Lü, Jing-Tao

2015-08-12

Low-dimensional electronic and glassy phononic transport are two important ingredients of highly efficient thermoelectric materials, from which two branches of thermoelectric research have emerged. One focuses on controlling electronic transport in the low dimension, while the other focuses on multiscale phonon engineering in the bulk. Recent work has benefited much from combining these two approaches, e.g., phonon engineering in low-dimensional materials. Here we propose to employ the low-dimensional electronic structure in bulk phonon-glass crystals as an alternative way to increase the thermoelectric efficiency. Through first-principles electronic structure calculations and classical molecular dynamics simulations, we show that the π-π-stacking bis(dithienothiophene) molecular crystal is a natural candidate for such an approach. This is determined by the nature of its chemical bonding. Without any optimization of the material parameters, we obtained a maximum room-temperature figure of merit, ZT, of 1.48 at optimal doping, thus validating our idea.

Thermoelectric Materials

NASA Astrophysics Data System (ADS)

Gao, Peng; Berkun, Isil; Schmidt, Robert D.; Luzenski, Matthew F.; Lu, Xu; Bordon Sarac, Patricia; Case, Eldon D.; Hogan, Timothy P.

2014-06-01

Mg2(Si,Sn) compounds are promising candidate low-cost, lightweight, nontoxic thermoelectric materials made from abundant elements and are suited for power generation applications in the intermediate temperature range of 600 K to 800 K. Knowledge on the transport and mechanical properties of Mg2(Si,Sn) compounds is essential to the design of Mg2(Si,Sn)-based thermoelectric devices. In this work, such materials were synthesized using the molten-salt sealing method and were powder processed, followed by pulsed electric sintering densification. A set of Mg2.08Si0.4- x Sn0.6Sb x (0 ≤ x ≤ 0.072) compounds were investigated, and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si0.364Sn0.6Sb0.036. The high ZT is attributed to a high electrical conductivity in these samples, possibly caused by a magnesium deficiency in the final product. The mechanical response of the material to stresses is a function of the elastic moduli. The temperature-dependent Young's modulus, shear modulus, bulk modulus, Poisson's ratio, acoustic wave speeds, and acoustic Debye temperature of the undoped Mg2(Si,Sn) compounds were measured using resonant ultrasound spectroscopy from 295 K to 603 K. In addition, the hardness and fracture toughness were measured at room temperature.

Solid Solutions Formation: Improving the Thermoelectric Properties of Skutterudites

NASA Technical Reports Server (NTRS)

Borshchevsky, A.; Caillat, T.; Fleurial, J. P.

1996-01-01

Materials with skutterudite structure have been known for a long time. Some of them are semiconductors. A typical skutterudite is CoSb(sub 3) and its thermoelectric properties were partially studied in the 1960's. Recently, it has been discovered that many skutterudite compounds are thermoelectrics with promising future.

Thermoelectric properties of single-layered SnSe sheet.

PubMed

Wang, Fancy Qian; Zhang, Shunhong; Yu, Jiabing; Wang, Qian

2015-10-14

Motivated by the recent study of inspiring thermoelectric properties in bulk SnSe [Zhao et al., Nature, 2014, 508, 373] and the experimental synthesis of SnSe sheets [Chen et al., J. Am. Chem. Soc., 2013, 135, 1213], we have carried out systematic calculations for a single-layered SnSe sheet focusing on its stability, electronic structure and thermoelectric properties by using density functional theory combined with Boltzmann transport theory. We have found that the sheet is dynamically and thermally stable with a band gap of 1.28 eV, and the figure of merit (ZT) reaches 3.27 (2.76) along the armchair (zigzag) direction with optimal n-type carrier concentration, which is enhanced nearly 7 times compared to its bulk counterpart at 700 K due to quantum confinement effect. Furthermore, we designed four types of thermoelectric couples by assembling single-layered SnSe sheets with different transport directions and doping types, and found that their efficiencies are all above 13%, which are higher than those of thermoelectric couples made of commercial bulk Bi2Te3 (7%-8%), suggesting the great potential of single-layered SnSe sheets for heat-electricity conversion.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

NASA Astrophysics Data System (ADS)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

Perspective: Web-based machine learning models for real-time screening of thermoelectric materials properties

NASA Astrophysics Data System (ADS)

Gaultois, Michael W.; Oliynyk, Anton O.; Mar, Arthur; Sparks, Taylor D.; Mulholland, Gregory J.; Meredig, Bryce

2016-05-01

The experimental search for new thermoelectric materials remains largely confined to a limited set of successful chemical and structural families, such as chalcogenides, skutterudites, and Zintl phases. In principle, computational tools such as density functional theory (DFT) offer the possibility of rationally guiding experimental synthesis efforts toward very different chemistries. However, in practice, predicting thermoelectric properties from first principles remains a challenging endeavor [J. Carrete et al., Phys. Rev. X 4, 011019 (2014)], and experimental researchers generally do not directly use computation to drive their own synthesis efforts. To bridge this practical gap between experimental needs and computational tools, we report an open machine learning-based recommendation engine (thermoelectrics.citrination.com">http://thermoelectrics.citrination.com) for materials researchers that suggests promising new thermoelectric compositions based on pre-screening about 25 000 known materials and also evaluates the feasibility of user-designed compounds. We show this engine can identify interesting chemistries very different from known thermoelectrics. Specifically, we describe the experimental characterization of one example set of compounds derived from our engine, RE12Co5Bi (RE = Gd, Er), which exhibits surprising thermoelectric performance given its unprecedentedly high loading with metallic d and f block elements and warrants further investigation as a new thermoelectric material platform. We show that our engine predicts this family of materials to have low thermal and high electrical conductivities, but modest Seebeck coefficient, all of which are confirmed experimentally. We note that the engine also predicts materials that may simultaneously optimize all three properties entering into zT; we selected RE12Co5Bi for this study due to its interesting chemical composition and known facile synthesis.

Structural, magnetic and high-temperature thermoelectric properties of La0.4Bi0.4Ca0.2Mn1-xCoxO3 (0 ≤ x ≤ 0.3) perovskites

NASA Astrophysics Data System (ADS)

Hira, Uzma; Sher, Falak

2018-04-01

In this study, we have investigated the structural, magnetic and thermoelectric properties of La0.4Bi0.4Ca0.2Mn1-xCoxO3 (0 ≤ x ≤ 0.3) manganites. The crystallographic parameters of samples were determined by the Rietveld refinement of powder X-ray diffraction data. It was observed that Co doping results in change of crystal structures from orthorhombic (space group: Pbnm) to rhombohedral (space group: R-3c) symmetry. Scanning electron microscopy (SEM) images show smooth, clean and densified structures, depicting good crystallinity of samples. The zero field cooled (ZFC) and field cooled (FC) magnetization data were collected in the temperature range 5 to 300 K under an applied magnetic field of 0.1 Tesla. The analysis of temperature dependent magnetization data reveals all samples to be ferromagnetic with Curie temperatures around ∼77 K. The magnetic hysteresis loops, collected at 5 K, show that the saturation magnetization (MS) values decrease from 43 emu/g to 14 emu/g with increase in Co doping. The high temperature thermoelectric properties of all samples are characteristic of a semiconducting behavior, the small polaron hopping model fitting well with the temperature dependent electrical resistivity (ρ) and thermopower (S) data. The thermopower values change sign from positive to negative as temperature is increased from 313 K to 680 K. The maximum thermoelectric power factor (PF = S2/ρ) obtained for x = 0.3 sample at 313 K is 4.60 μW/mK2, is much higher than for the undoped sample.

Thermoelectric clathrates of type I.

PubMed

Christensen, Mogens; Johnsen, Simon; Iversen, Bo Brummerstedt

2010-01-28

Thermoelectric clathrates hold significant promise for high temperature applications with zT values exceeding 1.3. The inorganic clathrates have been shown to be both chemically and thermally stable at high temperatures, and high performance can be obtained from both single crystals and processed powders. The clathrates also show excellent compatibility factors in segmented module applications. For a materials chemist it is furthermore of great importance that the clathrates exhibit a very rich chemistry with the ability for substitution of many different elements. This allows delicate tuning of both the crystal structure as well as the physical properties. With all these assets, it is not surprising that clathrates have been intensely investigated in the thermoelectric community during the past decade. The present perspective provides a review of the many studies concerned with the synthesis, crystal structure and thermoelectric properties of clathrates with emphasis on the type I clathrate.

Preparation and Thermoelectric Properties of Cu2Se Hot-Pressed from Hydrothermal Synthesis Nanopowders

NASA Astrophysics Data System (ADS)

Gao, F.; Leng, S. L.; Zhu, Z.; Li, X. J.; Hu, X.; Song, H. Z.

2018-04-01

The nanopowders of Cu2Se were synthesized by the hydrothermal method, and then were hot-pressed into bulk pellets. The effects of different preparation conditions on the structure and thermoelectric properties of Cu2Se nanocrystalline bulk alloys were investigated. The resistivity and Seebeck coefficients increase with the increment of hot-pressing temperatures, while they decrease with the increment of hot-pressing time, except for the Seebeck coefficients of the sample hot-pressed for 30 min. Based on the power factors and dimensionless thermoelectric figure-of-merit ( ZT) values, the optimum hot-pressing parameters are 700°C and 30 min.

A Model for Predicting Thermoelectric Properties of Bi2Te3

NASA Technical Reports Server (NTRS)

Lee, Seungwon; VonAllmen, Paul

2009-01-01

A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.

Development of High Power Density Micro-Thermoelectric Generators

NASA Astrophysics Data System (ADS)

Zhang, Wenhua

Thermoelectric generators (TEGs) are promising for the waste heat recovery in virtue of the ability to directly convert heat to electricity. Despite of their relatively low energy conversion efficiency, TEGs have many advantages including high reliability, long lifetime, and environmental friendliness. Especially, compared to conventional heat engines, TEGs are compact, scalable, and can be easily driven by small temperature differences. Potential applications of TEGs include thermal sensing, thermal management, and thermal energy harvesting to power wireless sensors and microelectronic devices such as wearable medical sensors and wristwatches. This dissertation presents my work on development of high power density non-flexible and flexible micro-TEGs for thermal energy harvesting in the ambient environment. Micro- TEGs are developed by a bottom-up approach combing electroplating and microfabrication processes. Pulsed electroplating is mainly adopted to deposit thermoelectric materials in the device fabrication. First, I collaborated with Dr. Zhou in our lab and systematically studied the effect of deposition parameters on composition, microstructure, and thermoelectric properties of the electroplated Bi2Te3 and Sb2 Te3 thin films. We demonstrated that thermoelectric properties of both Bi2Te3 and Sb2Te3 films can be enhanced by tuning the pulse off-to-on ratio. After the fundamental study on the deposition conditions, morphology, and thermoelectric properties of the electroplated materials, we fabricated a high power density cross-plane micro-TEG on the SiO2/Si substrate by integrating the pulsed electroplating with microfabrication processes. The TEG consists of a total of 127 pairs of n-type Bi2Te3 and ptype Sb2Te3 thermoelectric pillars embedded in a SU-8 matrix to enhance the overall mechanical strength of the device. Both bottom and top electrical connections are formed by electroplating, which is advantageous because of facile and low cost fabrication and low

Zigzag nanoribbons of two-dimensional silicene-like crystals: magnetic, topological and thermoelectric properties.

PubMed

Wierzbicki, Michał; Barnaś, Józef; Swirkowicz, Renata

2015-12-09

The effects of electron-electron and spin-orbit interactions on the ground-state magnetic configuration and on the corresponding thermoelectric and spin thermoelectric properties in zigzag nanoribbons of two-dimensional hexagonal crystals are analysed theoretically. The thermoelectric properties of quasi-stable magnetic states are also considered. Of particular interest is the influence of Coulomb and spin-orbit interactions on the topological edge states and on the transition between the topological insulator and conventional gap insulator states. It is shown that the interplay of both interactions also has a significant impact on the transport and thermoelectric characteristics of the nanoribbons. The spin-orbit interaction also determines the in-plane magnetic easy axis. The thermoelectric properties of nanoribbons with in-plane magnetic moments are compared to those of nanoribbons with edge magnetic moments oriented perpendicularly to their plane. Nanoribbons with ferromagnetic alignment of the edge moments are shown to reveal spin thermoelectricity in addition to the conventional one.

Analysis of a Temperature-Controlled Exhaust Thermoelectric Generator During a Driving Cycle

NASA Astrophysics Data System (ADS)

Brito, F. P.; Alves, A.; Pires, J. M.; Martins, L. B.; Martins, J.; Oliveira, J.; Teixeira, J.; Goncalves, L. M.; Hall, M. J.

2016-03-01

Thermoelectric generators can be used in automotive exhaust energy recovery. As car engines operate under wide variable loads, it is a challenge to design a system for operating efficiently under these variable conditions. This means being able to avoid excessive thermal dilution under low engine loads and being able to operate under high load, high temperature events without the need to deflect the exhaust gases with bypass systems. The authors have previously proposed a thermoelectric generator (TEG) concept with temperature control based on the operating principle of the variable conductance heat pipe/thermosiphon. This strategy allows the TEG modules’ hot face to work under constant, optimized temperature. The variable engine load will only affect the number of modules exposed to the heat source, not the heat transfer temperature. This prevents module overheating under high engine loads and avoids thermal dilution under low engine loads. The present work assesses the merit of the aforementioned approach by analysing the generator output during driving cycles simulated with an energy model of a light vehicle. For the baseline evaporator and condenser configuration, the driving cycle averaged electrical power outputs were approximately 320 W and 550 W for the type-approval Worldwide harmonized light vehicles test procedure Class 3 driving cycle and for a real-world highway driving cycle, respectively.

Flexible and self-powered temperature-pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials.

PubMed

Zhang, Fengjiao; Zang, Yaping; Huang, Dazhen; Di, Chong-an; Zhu, Daoben

2015-09-21

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter temperature-pressure sensors based on microstructure-frame-supported organic thermoelectric (MFSOTE) materials. The effective transduction of temperature and pressure stimuli into two independent electrical signals permits the instantaneous sensing of temperature and pressure with an accurate temperature resolution of <0.1 K and a high-pressure-sensing sensitivity of up to 28.9 kPa(-1). More importantly, these dual-parameter sensors can be self-powered with outstanding sensing performance. The excellent sensing properties of MFSOTE-based devices, together with their unique advantages of low cost and large-area fabrication, make MFSOTE materials possess promising applications in e-skin and health-monitoring elements.

Flexible and self-powered temperature-pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials

NASA Astrophysics Data System (ADS)

Zhang, Fengjiao; Zang, Yaping; Huang, Dazhen; di, Chong-An; Zhu, Daoben

2015-09-01

Skin-like temperature- and pressure-sensing capabilities are essential features for the next generation of artificial intelligent products. Previous studies of e-skin and smart elements have focused on flexible pressure sensors, whereas the simultaneous and sensitive detection of temperature and pressure with a single device remains a challenge. Here we report developing flexible dual-parameter temperature-pressure sensors based on microstructure-frame-supported organic thermoelectric (MFSOTE) materials. The effective transduction of temperature and pressure stimuli into two independent electrical signals permits the instantaneous sensing of temperature and pressure with an accurate temperature resolution of <0.1 K and a high-pressure-sensing sensitivity of up to 28.9 kPa-1. More importantly, these dual-parameter sensors can be self-powered with outstanding sensing performance. The excellent sensing properties of MFSOTE-based devices, together with their unique advantages of low cost and large-area fabrication, make MFSOTE materials possess promising applications in e-skin and health-monitoring elements.

Impact Factors Analysis of the Hot Side Temperature of Thermoelectric Module

NASA Astrophysics Data System (ADS)

Zhang, Xingyu; Tan, Gangfeng; Yang, Bo

2018-03-01

The thermoelectric generator (TEG) plays a crucial role in converting the waste energy of exhaust into electricity, which ensures energy saving and increased fuel utilization efficiency. In the urban driving cycle, frequent vehicle operation, like deceleration or acceleration, results in continuous variation of the exhaust temperature. In order to make the operating performance stable, and to weaken the adverse effects of the frequent variation of the exhaust temperature on the lifetime and work efficiency of the electronic components of TEG systems, the output voltage of the thermoelectric (TE) module should stay more stable. This article provides an improved method for the temperature stability of the TE material hot side based on sandwiching material. From the view of the TEG system's average output power and the hot side temperature stability of the TE material, the analyzing factors, including the fluctuation frequency of the exhaust temperature and the physical properties and thickness of the sandwiching material are evaluated, respectively, in the sine and new European driving cycle (NEDC) fluctuation condition of the exhaust temperature. The results show few effects of sandwiching material thickness with excellent thermal conductivity on the average output power. During the 150-170 s of the NEDC test condition, the minimum hot side temperatures with a BeO ceramic thickness of 2 mm and 6 mm are, respectively, 537.19 K and 685.70 K, which shows the obvious effect on the hot side temperature stability of the BeO ceramic thickness in the process of acceleration and deceleration of vehicle driving.

Impact Factors Analysis of the Hot Side Temperature of Thermoelectric Module

NASA Astrophysics Data System (ADS)

Zhang, Xingyu; Tan, Gangfeng; Yang, Bo

2017-12-01

The thermoelectric generator (TEG) plays a crucial role in converting the waste energy of exhaust into electricity, which ensures energy saving and increased fuel utilization efficiency. In the urban driving cycle, frequent vehicle operation, like deceleration or acceleration, results in continuous variation of the exhaust temperature. In order to make the operating performance stable, and to weaken the adverse effects of the frequent variation of the exhaust temperature on the lifetime and work efficiency of the electronic components of TEG systems, the output voltage of the thermoelectric (TE) module should stay more stable. This article provides an improved method for the temperature stability of the TE material hot side based on sandwiching material. From the view of the TEG system's average output power and the hot side temperature stability of the TE material, the analyzing factors, including the fluctuation frequency of the exhaust temperature and the physical properties and thickness of the sandwiching material are evaluated, respectively, in the sine and new European driving cycle (NEDC) fluctuation condition of the exhaust temperature. The results show few effects of sandwiching material thickness with excellent thermal conductivity on the average output power. During the 150-170 s of the NEDC test condition, the minimum hot side temperatures with a BeO ceramic thickness of 2 mm and 6 mm are, respectively, 537.19 K and 685.70 K, which shows the obvious effect on the hot side temperature stability of the BeO ceramic thickness in the process of acceleration and deceleration of vehicle driving.

Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites

NASA Astrophysics Data System (ADS)

Schierning, G.; Theissmann, R.; Stein, N.; Petermann, N.; Becker, A.; Engenhorst, M.; Kessler, V.; Geller, M.; Beckel, A.; Wiggers, H.; Schmechel, R.

2011-12-01

Phosphorus-doped silicon nanopowder from a gas phase process was compacted by DC-current sintering in order to obtain thermoelectrically active, nanocrystalline bulk silicon. A density between 95% and 96% compared to the density of single crystalline silicon was achieved, while preserving the nanocrystalline character with an average crystallite size of best 25 nm. As a native surface oxidation of the nanopowder usually occurs during nanopowder handling, a focus of this work is on the role of oxygen on microstructure and transport properties of the nanocomposite. A characterization with transmission electron microscopy (TEM) showed that the original core/shell structure of the nanoparticles was not found within the sintered nanocomposites. Two different types of oxide precipitates could be identified by energy filtered imaging technique. For a detailed analysis, 3-dimensional tomography with reconstruction was done using a needle-shaped sample prepared by focused ion beam (FIB). The 3-dimensional distribution of silicon dioxide precipitates confirmed that the initial core/shell structure breaks down and precipitates are formed. It is further found that residual pores are exclusively located within oxide precipitates. Thermoelectric characterization was done on silicon nanocomposites sintered between 960 °C and 1060 °C with varying oxygen content between room temperature and 950 °C. The higher sintering temperature led to a better electrical activation of the phosphorus dopant. The oxidic precipitates support densification and seem to be able to reduce the thermal conductivity therefore enhancing thermoelectric properties. A peak figure of merit, zT, of 0.5 at 950 °C was measured for a sample sintered at 1060 °C with a mean crystallite size of 46 nm.

FAST TRACK COMMUNICATION: Thermoelectric properties of graphene nanoribbons, junctions and superlattices

NASA Astrophysics Data System (ADS)

Chen, Y.; Jayasekera, T.; Calzolari, A.; Kim, K. W.; Buongiorno Nardelli, M.

2010-09-01

Using model interaction Hamiltonians for both electrons and phonons and Green's function formalism for ballistic transport, we have studied the thermal conductance and the thermoelectric properties of graphene nanoribbons (GNR), GNR junctions and periodic superlattices. Among our findings we have established the role that interfaces play in determining the thermoelectric response of GNR systems both across single junctions and in periodic superlattices. In general, increasing the number of interfaces in a single GNR system increases the peak ZT values that are thus maximized in a periodic superlattice. Moreover, we proved that the thermoelectric behavior is largely controlled by the width of the narrower component of the junction. Finally, we have demonstrated that chevron-type GNRs recently synthesized should display superior thermoelectric properties.

Magnetic and thermoelectric properties of the ternary pseudo-hollandite BaxCr5Se8 (0.5 < x < 0.55) solid solution.

PubMed

Lefèvre, Robin; Berthebaud, David; Bux, Sabah; Hébert, Sylvie; Gascoin, Franck

2016-07-26

The structure of Ba0.5Cr5Se8 has been recently resolved, and its thermoelectric and magnetic properties have been studied. A ZT of 0.12 was found at around 800 K. Here, we report a study on the pseudo-hollandite BaxCr5Se8 solid-solution with 0.5 ≤ x ≤ 0.55 and its thermoelectric and magnetic properties. There is no significant impact either on the cell parameters depending on the cation content or on the magnetic properties. However, thermoelectric properties are radically changed depending on x content. While the low thermal conductivity, around 0.8 W m(-1) K(-1), remains similar for all samples, a respective increase and decrease of the resistivity and the Seebeck coefficient are observed with increasing Ba content. The maximum Seebeck coefficient is found with Ba0.5Cr5Se8 at around 635 K with 315 μV K(-1), and the Seebeck coefficient then decreases and is correlated with an activation of minority charge carriers confirmed by Hall measurements. A similar but steeper behavior is observed for the Ba0.55Cr5Se8 temperature dependence plot at around 573 K. Finally, the best thermoelectric performances are found using the lowest content of Ba, unlike when x tends to 0.55, ZT approaches a tenth of the initial best value. BaxCr5Se8 compounds are antiferromagnetic with TN = 58 K. A large peak in thermal conductivity is observed around the antiferromagnetic transition for all stoichiometry.

Thermoelectric energy converter for generation of electricity from low-grade heat

DOEpatents

Jayadev, T.S.; Benson, D.K.

1980-05-27

A thermoelectric energy conversion device which includes a plurality of thermoelectric elements is described. A hot liquid is supplied to one side of each element and a cold liquid is supplied to the other side of each element. The thermoelectric generator may be utilized to produce power from low-grade heat sources such as ocean thermal gradients, solar ponds, and low-grade geothermal resources. (WHK)

Laser-powered thermoelectric generators operating at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Harutyunyan, S. R.; Vardanyan, V. H.; Kuzanyan, A. S.; Nikoghosyan, V. R.; Kunii, S.; Winzer, K.; Wood, K. S.; Gulian, A. M.

2005-11-01

A thermoelectric generator, operating in a cryostat at liquid helium temperatures, is described. Energy to the generator is supplied via an external laser beam. For this prototype device the associated heat load at permanent operation is comparable with the heat load associated with power delivery via metallic wires. Estimates indicate that still better performance can be enabled with existing thermoelectric materials, thereby far exceeding efficiency of traditional cryostat wiring. We used a prototype generator to produce electric power for measuring critical currents in Nb3Sn-films at 4K.

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

PubMed Central

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N.; Tritt, Terry M.

2015-01-01

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy. It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration. Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3. PMID:26327483

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties.

PubMed

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N; Tritt, Terry M

2015-08-15

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy. It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration. Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Challenges in Characterizing Low-Temperature Regolith Properties

NASA Technical Reports Server (NTRS)

Swanger, Adam Michael; Mantovani, James G.

2014-01-01

The success or failure of in-situ resource utilization for planetary surface exploration--be it for scientific, colonization or commercialization purposes--relies heavily on the ability to design and implement systems which effectively process the associated regolith and exploit its benefits. In most cases this challenge necessarily includes the characterization of low-temperature (cryogenic) properties; as many celestial destinations of interest, such as the moon, Mars and asteroids, have little or no atmosphere to help sustain the consistently "high" surface temperatures seen on planets such as Earth, and therefore can experience permanent cryogenic temperatures or dramatic cyclical changes. Characterization of physical properties (such as specific heat, thermal and electrical conductivity, etc.) over the entire temperature profile is undoubtedly an important piece of the puzzle; however, the impact on mechanical properties due to the introduction of icy deposit must also be explored in order to devise effective and robust excavation technologies. Currently the Granular Mechanics and Regolith Operations Lab and the Cryogenics Test Lab at NASA Kennedy Space Center are developing technologies and experimental methods to address these challenges and aid in the characterization of physical and mechanical properties of regolith at cryogenic temperatures. This presentation will review the current state of knowledge concerning lunar regolith at low temperature including that of icy regolith.

Experimental Investigation of a Temperature-Controlled Car Seat Powered by an Exhaust Thermoelectric Generator

NASA Astrophysics Data System (ADS)

Du, H.; Wang, Y. P.; Yuan, X. H.; Deng, Y. D.; Su, C. Q.

2016-03-01

To improve the riding comfort and rational utilization of the electrical energy captured by an automotive thermoelectric generator (ATEG), a temperature-controlled car seat was constructed to adjust the temperature of the car seat surface. Powered by the ATEG and the battery, the seat-embedded air conditioner can improve the riding comfort using a thermoelectric device to adjust the surface temperature of the seat, with an air duct to regulate the cold side and hot side of the thermoelectric device. The performance of the thermoelectric cooler (TEC) and theoretical analysis on the optimum state of the TEC device are put forward. To verify the rationality of the air duct design and to ensure sufficient air supply, the velocity field of the air duct system was obtained by means of the finite element method. To validate the reliability of the numerical simulation, the air velocity around the thermoelectric device was measured by a wind speed transmitter. The performance of the temperature-controlled car seat has been validated and is in good agreement with bench tests and real vehicle tests.

Thermoelectric properties of the yttrium-doped ceramic oxide SrTiO3

NASA Astrophysics Data System (ADS)

Khan, Tamal Tahsin; Ur, Soon-Chul

2017-01-01

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO3 at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO3. The doping level in SrTiO3 was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO3 provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric Generators.

PubMed

Kang, Young Hun; Jang, Kwang-Suk; Lee, Changjin; Cho, Song Yun

2016-03-02

Highly conductive indium zinc oxide (IZO) thin films were successfully fabricated via a self-combustion reaction for application in solution-processed thermoelectric devices. Self-combustion efficiently facilitates the conversion of soluble precursors into metal oxides by lowering the required annealing temperature of oxide films, which leads to considerable enhancement of the electrical conductivity of IZO thin films. Such enhanced electrical conductivity induced by exothermic heat from a combustion reaction consequently yields high performance IZO thermoelectric films. In addition, the effect of the composition ratio of In to Zn precursors on the electrical and thermoelectric properties of the IZO thin films was investigated. IZO thin films with a composition ratio of In:Zn = 6:2 at the low annealing temperature of 350 °C showed an enhanced electrical conductivity, Seebeck coefficient, and power factor of 327 S cm(-1), 50.6 μV K(-1), and 83.8 μW m(-1) K(-2), respectively. Moreover, the IZO thin film prepared at an even lower temperature of 300 °C retained a large power factor of 78.7 μW m(-1) K(-2) with an electrical conductivity of 168 S cm(-1). Using the combustive IZO precursor, a thermoelectric generator consisting of 15 legs was fabricated by a printing process. The thermoelectric array generated a thermoelectric voltage of 4.95 mV at a low temperature difference (5 °C). We suggest that the highly conductive IZO thin films by self-combustion may be utilized for fabricating n-type flexible printed thermoelectric devices.

Encapsulation of high temperature thermoelectric modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salvador, James R.; Sakamoto, Jeffrey; Park, Youngsam

A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabricated by such method are described. These thermoelectric devices may be intended for use under conditions which would otherwise promote oxidation of the thermoelectric elements. The capsule is formed by securing a suitably-sized thin-walled strip of oxidation-resistant metal to the ceramic substrates which support the thermoelectric elements. The thin-walled metal strip is positioned to enclose the edges of the thermoelectric device and is secured to the substrates using gap-filling materials. The strip, substrates and gap-filling materials cooperatively encapsulate the thermoelectricmore » elements and exclude oxygen and water vapor from atmospheric air so that the elements may be maintained in an inert, non-oxidizing environment.« less

Interpreting the Combustion Process for High-Performance ZrNiSn Thermoelectric Materials.

PubMed

Hu, Tiezheng; Yang, Dongwang; Su, Xianli; Yan, Yonggao; You, Yonghui; Liu, Wei; Uher, Ctirad; Tang, Xinfeng

2018-01-10

The ZrNiSn alloy, a member of the half-Heusler family of thermoelectric materials, shows great potential for mid-to-high-temperature power generation applications due to its excellent thermoelectric properties, robust mechanical properties, and good thermal stability. The existing synthesis processes of half-Heusler alloys are, however, rather time and energy intensive. In this study, single-phase ZrNiSn bulk materials were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) for the first time. The analysis of thermodynamic and kinetic processes shows that the SHS reaction in the ternary ZrNiSn alloy is different from the more usual binary systems. It consists of a series of SHS reactions and mass transfers triggered by the SHS fusion of the binary Ni-Sn system that eventually culminates in the formation of single-phase ternary ZrNiSn in a very short time, which reduced the synthesis period from few days to less than an hour. Moreover, the nonequilibrium feature induces Ni interstitials in the structure, which simultaneously enhances the electrical conductivity and decreases the thermal conductivity, which is favorable for thermoelectric properties. The maximum thermoelectric figure of merit ZT of the SHS + SPS-processed ZrNiSn 1-x Sb x alloy reached 0.7 at 870 K. This study opens a new avenue for the fast and low-cost fabrication of half-Heusler thermoelectric materials.

Nanostructured SnSe: Synthesis, doping, and thermoelectric properties

NASA Astrophysics Data System (ADS)

Liu, Shuhao; Sun, Naikun; Liu, Mei; Sucharitakul, Sukrit; Gao, Xuan P. A.

2018-03-01

IV-VI monochalcogenide SnSe or SnS has recently been proposed as a promising two-dimensional (2D) material for valleytronics and thermoelectrics. We report the synthesis of SnSe nanoflakes and nanostructured thin films with chemical vapor deposition method and their thermoelectric properties. As grown SnSe nanostructures are found to be intrinsically p-type and the single SnSe nanoflake field effect transistor was fabricated. By Ag doping, the power factor of SnSe nanostructured thin films can be improved by up to one order of magnitude compared to the "intrinsic" as grown materials. Our work provides an initial step in the pursuit of IV-VI monochalcogenides as novel 2D semiconductors for electronics and thermoelectrics.

Unravelling Doping Effects on PEDOT at the Molecular Level: From Geometry to Thermoelectric Transport Properties.

PubMed

Shi, Wen; Zhao, Tianqi; Xi, Jinyang; Wang, Dong; Shuai, Zhigang

2015-10-14

Tuning carrier concentration via chemical doping is the most successful strategy to optimize the thermoelectric figure of merit. Nevertheless, how the dopants affect charge transport is not completely understood. Here we unravel the doping effects by explicitly including the scattering of charge carriers with dopants on thermoelectric properties of poly(3,4-ethylenedioxythiophene), PEDOT, which is a p-type thermoelectric material with the highest figure of merit reported. We corroborate that the PEDOT exhibits a distinct transition from the aromatic to quinoid-like structure of backbone, and a semiconductor-to-metal transition with an increase in the level of doping. We identify a close-to-unity charge transfer from PEDOT to the dopant, and find that the ionized impurity scattering dominates over the acoustic phonon scattering in the doped PEDOT. By incorporating both scattering mechanisms, the doped PEDOT exhibits mobility, Seebeck coefficient and power factors in very good agreement with the experimental data, and the lightly doped PEDOT exhibits thermoelectric properties superior to the heavily doped one. We reveal that the thermoelectric transport is highly anisotropic in ordered crystals, and suggest to utilize large power factors in the direction of polymer backbone and low lattice thermal conductivity in the stacking and lamellar directions, which is viable in chain-oriented amorphous nanofibers.

Thermoelectric properties of antiperovskite calcium oxides Ca{sub 3}PbO and Ca{sub 3}SnO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okamoto, Y., E-mail: yokamoto@nuap.nagoya-u.ac.jp; Institute for Advanced Research, Nagoya University, Nagoya 464-8601; Sakamaki, A.

We report the thermoelectric properties of polycrystalline samples of Ca{sub 3}Pb{sub 1−x}Bi{sub x}O (x = 0, 0.1, 0.2) and Ca{sub 3}SnO, both crystallizing in a cubic antiperovskite-type structure. The Ca{sub 3}SnO sample shows metallic resistivity and its thermoelectric power approaches 100 μV K{sup −1} at room temperature, resulting in the thermoelectric power factor of Ca{sub 3}SnO being larger than that of Ca{sub 3}Pb{sub 1−x}Bi{sub x}O. On the basis of Hall and Sommerfeld coefficients, the Ca{sub 3}SnO sample is found to be a p-type metal with a carrier density of ∼10{sup 19 }cm{sup −3}, a mobility of ∼80 cm{sup 2} V{sup −1} s{sup −1}, both comparablemore » to those in degenerated semiconductors, and a moderately large hole carrier effective mass. The coexistence of moderately high mobility and large effective mass observed in Ca{sub 3}SnO, as well as possible emergence of a multivalley electronic structure with a small band gap at low-symmetry points in k-space, suggests that the antiperovskite Ca oxides have strong potential as a thermoelectric material.« less

Optoelectronic and Thermoelectric Properties of Bi2OX 2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

2018-02-01

We have explored the optoelectronic structure and related thermoelectric properties of Bi2OX 2 (X = S, Se, Te) using density functional theory and spin-orbit coupling (SOC). We report herein calculations of the bandgap of these bismuth sulfides/oxysulfides to participate in the recent debate regarding such values. The generalized gradient approximation calculations corrected using the SOC scheme estimated bandgaps of 0.950 eV, 0.635 eV, and 0.441 eV for Bi2OS2, Bi2OSe2, and Bi2OTe2, respectively, in close agreement with experimental results and showing better accuracy compared with available theoretical calculations. This bandgap range shows the potential use of Bi2OX 2 for solar cell applications. Hence, we derived their optical and thermoelectric properties. Similarly to one of the parent materials, Bi2S3, a semiconductor with special photovoltaic and thermoelectric properties, the present derivatives Bi2OX 2 show promising characteristics for exploration in the near future for use in solar cells and thermoelectric devices.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE PAGES

Wang, H.; Leonard, K. J.

2017-07-25

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Leonard, K. J.

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, makingmore » the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.« less

Enhanced thermoelectric performance driven by high-temperature phase transition in the phase change material Ge 4SbTe 5

DOE PAGES

Williams, Jared B.; Lara-Curzio, Edgar; Cakmak, Ercan; ...

2015-05-15

Phase change materials are identified for their ability to rapidly alternate between amorphous and crystalline phases and have large contrast in the optical/electrical properties of the respective phases. The materials are primarily used in memory storage applications, but recently they have also been identified as potential thermoelectric materials. Many of the phase change materials researched today can be found on the pseudo-binary (GeTe) 1-x(Sb 2Te 3) x tie-line. While many compounds on this tie-line have been recognized as thermoelectric materials, here we focus on Ge 4SbTe 5, a single phase compound just off of the (GeTe) 1-x(Sb 2Te 3) xmore » tie-line, that forms in a stable rocksalt crystal structure at room temperature. We find that stoichiometric and undoped Ge 4SbTe 5 exhibits a thermal conductivity of ~1.2 W/m-K at high temperature and a large Seebeck coefficient of ~250 μV/K. The resistivity decreases dramatically at 623 K due to a structural phase transition which lends to a large enhancement in both thermoelectric power factor and thermoelectric figure of merit at 823 K. In a more general sense the research presents evidence that phase change materials can potentially provide a new route to highly efficient thermoelectric materials for power generation at high temperature.« less

Thermoelectric properties optimization of Fe2VGa by tuning electronic density of states via titanium doping

NASA Astrophysics Data System (ADS)

Wei, Pai-Chun; Huang, Ta-Sung; Lin, Shu-Wei; Guo, Guang-Yu; Chen, Yang-Yuan

2015-10-01

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe2V1-xTixGa by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe2VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogap to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m-1 K-2 at room temperature, which is comparable to the power factors of Bi2Te3-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe2VGa.

Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

NASA Technical Reports Server (NTRS)

Doan-Nguyen, Vicky V.

2005-01-01

High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

Development of Perovskite-Type Materials for Thermoelectric Application.

PubMed

Wu, Tingjun; Gao, Peng

2018-06-12

Oxide perovskite materials have a long history of being investigated for thermoelectric applications. Compared to the state-of-the-art tin and lead chalcogenides, these perovskite compounds have advantages of low toxicity, eco-friendliness, and high elemental abundance. However, because of low electrical conductivity and high thermal conductivity, the total thermoelectric performance of oxide perovskites is relatively poor. Variety of methods were used to enhance the TE properties of oxide perovskite materials, such as doping, inducing oxygen vacancy, embedding crystal imperfection, and so on. Recently, hybrid perovskite materials started to draw attention for thermoelectric application. Due to the low thermal conductivity and high Seebeck coefficient feature of hybrid perovskites materials, they can be promising thermoelectric materials and hold the potential for the application of wearable energy generators and cooling devices. This mini-review will build a bridge between oxide perovskites and burgeoning hybrid halide perovskites in the research of thermoelectric properties with an aim to further enhance the relevant performance of perovskite-type materials.

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

NASA Astrophysics Data System (ADS)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

PubMed Central

Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg; Yin, Hao; Hung, Le Thanh; Iversen, Bo Brummerstedt

2017-01-01

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost n-type material, Te-doped Mg3Sb1.5Bi0.5, that exhibits a very high figure of merit zT ranging from 0.56 to 1.65 at 300−725 K. Using combined theoretical prediction and experimental validation, we show that the high thermoelectric performance originates from the significantly enhanced power factor because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications. PMID:28059069

High-performance thermoelectric mineral Cu12-xNixSb4S13 tetrahedrite

NASA Astrophysics Data System (ADS)

Suekuni, Koichiro; Tsuruta, Kojiro; Kunii, Masaru; Nishiate, Hirotaka; Nishibori, Eiji; Maki, Sachiko; Ohta, Michihiro; Yamamoto, Atsushi; Koyano, Mikio

2013-01-01

X-ray structural analysis and high-temperature thermoelectric properties measurements are performed on polycrystalline samples of artificial mineral Cu12-xNixSb4S13 tetrahedrite. Analysis of the atomic displacement parameter manifests low-energy vibration of Cu(2) out of CuS3 triangle plane. The vibration results in low lattice thermal conductivity of less than 0.5 W K-1 m-1. By tuning of the Ni composition x and decrease of electronic thermal conductivity, dimensionless thermoelectric figure of merit for x = 1.5 achieves 0.7 at 665 K, which is a considerably high value among p-type Pb-free sulfides. Because the tetrahedrite is an environmentally friendly material, it constitutes a good thermoelectric material for use in support of a sustainable society.

High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

NASA Technical Reports Server (NTRS)

Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

2013-01-01

A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

Structural principles and thermoelectric properties of polytypic group 14 clathrate-II frameworks.

PubMed

Karttunen, Antti J; Fässler, Thomas F

2013-06-24

We have investigated the structural principles and thermoelectric properties of polytypic group 14 clathrate-II frameworks using quantum chemical methods. The experimentally known cubic 3C polytype was found to be the energetically most favorable framework, but the studied hexagonal polytypes (2 H, 4 H, 6 H, 8 H, 10 H) lie energetically close to it. In the case of germanium, the energy difference between the 3C and 6H clathrate-II polytypes is ten times smaller than the difference between the experimentally known 3C-Ge (α-Ge) and 4H-Ge polytypes. The thermoelectric properties of guest-occupied clathrate-II structures were investigated for compositions Na-Rb-Ga-Ge and Ge-As-I. The clathrate-II structures show promising thermoelectric properties and the highest Seebeck coefficients and thermoelectric power factors were predicted for the 3C polytype. The structural anisotropy of the largest studied hexagonal polytypes affects their thermoelectric power factors by over a factor of two. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric Properties of Dy-Doped SrTiO3 Ceramics

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, C. L.; Peng, H.; Su, W. B.; Wang, H. C.; Li, J. C.; Zhang, J. L.; Mei, L. M.

2012-11-01

Sr1- x Dy x TiO3 ( x = 0.02, 0.05, 0.10) ceramics were prepared by the reduced solid-state reaction method, and their thermoelectric properties were investigated from room temperature to 973 K. The resistivity increases with temperature, showing metallic behavior. The Seebeck coefficients tend to saturate at high temperatures, presenting narrow-band behavior, as proved by ab initio calculations of the electronic structure. The magnitudes of the Seebeck coefficient and the electrical resistivity decrease with increasing Dy content. At the same time, the thermal conductivity decreases because the lattice thermal conductivity is reduced by Dy substitution. The maximum value of the figure of merit reaches 0.25 at 973 K for the Sr0.9Dy0.1TiO3 sample.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size.

PubMed

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-16

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb 2 Te 3 ) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb 2 Te 3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb 2 Te 3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb 2 Te 3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Thermoelectric properties of nanocrystalline Sb2Te3 thin films: experimental evaluation and first-principles calculation, addressing effect of crystal grain size

NASA Astrophysics Data System (ADS)

Morikawa, Satoshi; Inamoto, Takuya; Takashiri, Masayuki

2018-02-01

The effect of crystal grain size on the thermoelectric properties of nanocrystalline antimony telluride (Sb2Te3) thin films was investigated by experiments and first-principles studies using a developed relaxation time approximation. The Sb2Te3 thin films were deposited on glass substrates using radio-frequency magnetron sputtering. To change the crystal grain size of the Sb2Te3 thin films, thermal annealing was performed at different temperatures. The crystal grain size, lattice parameter, and crystal orientation of the thin films were estimated using XRD patterns. The carrier concentration and in-plane thermoelectric properties of the thin films were measured at room temperature. A theoretical analysis was performed using a first-principles study based on density functional theory. The electronic band structures of Sb2Te3 were calculated using different lattice parameters, and the thermoelectric properties were predicted based on the semi-classical Boltzmann transport equation in the relaxation time approximation. In particular, we introduced the effect of carrier scattering at the grain boundaries into the relaxation time approximation by estimating the group velocities from the electronic band structures. Finally, the experimentally measured thermoelectric properties were compared with those obtained by calculation. As a result, the calculated thermoelectric properties were found to be in good agreement with the experimental results. Therefore, we can conclude that introducing the effect of carrier scattering at the grain boundaries into the relaxation time approximation contributes to enhance the accuracy of a first-principles calculation relating to nanocrystalline materials.

Thermoelectric materials with filled skutterudite structure for thermoelectric devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Borshchevsky, Alex (Inventor); Caillat, Thierry (Inventor); Morelli, Donald T. (Inventor); Meisner, Gregory P. (Inventor)

2002-01-01

A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Thermoelectric Micro-Refrigerator Based on Bismuth/Antimony Telluride

NASA Astrophysics Data System (ADS)

Dang, Linh Tuan; Dang, Tung Huu; Nguyen, Thao Thi Thu; Nguyen, Thuat Tran; Nguyen, Hue Minh; Nguyen, Tuyen Viet; Nguyen, Hung Quoc

2017-06-01

Thermoelectric micro-coolers based on bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) are important in many practical applications thanks to their compactness and fluid-free circulation. In this paper, we studied thermoelectric properties of bismuth/antimony telluride (Bi/SbTe) thin films prepared by the thermal co-evaporation method, which yielded among the best thermoelectric quality. Different co-evaporation conditions such as deposition flux ratio of materials and substrate temperature during deposition were investigated to optimize the thermoelectric figure␣of merit of these materials. Micron-size refrigerators were designed and fabricated using standard lithography and etching technique. A three-layer structure was introduced, including a p-type layer, an n-type layer and an aluminum layer. Next to the main cooler, a pair of smaller Bi/SbTe junctions was used as a thermocouple to directly measure electron temperature of the main device. Etching properties of the thermoelectric materials were investigated and optimized to support the fabrication process of the micro-refrigerator. We discuss our results and address possible applications.

Thermoelectric Power Factor Limit of a 1D Nanowire

NASA Astrophysics Data System (ADS)

Chen, I.-Ju; Burke, Adam; Svilans, Artis; Linke, Heiner; Thelander, Claes

2018-04-01

In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effects in practice. Here we point out that there is an upper limit to the thermoelectric power factor of nonballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasiballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I -V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit allows the prediction of the achievable power factor of a specific nanowire material system with 1D electronic transport based on the nanowire dimension and mean free path. The power factor of state-of-the-art semiconductor nanowires with small cross section and high crystal quality can be expected to be highly competitive (on the order of mW /m K2 ) at low temperatures. However, they have no clear advantage over bulk materials at, or above, room temperature.

Thermoelectric Power Factor Limit of a 1D Nanowire.

PubMed

Chen, I-Ju; Burke, Adam; Svilans, Artis; Linke, Heiner; Thelander, Claes

2018-04-27

In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effects in practice. Here we point out that there is an upper limit to the thermoelectric power factor of nonballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasiballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I-V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit allows the prediction of the achievable power factor of a specific nanowire material system with 1D electronic transport based on the nanowire dimension and mean free path. The power factor of state-of-the-art semiconductor nanowires with small cross section and high crystal quality can be expected to be highly competitive (on the order of mW/m K^{2}) at low temperatures. However, they have no clear advantage over bulk materials at, or above, room temperature.

Analytic Thermoelectric Couple Modeling: Variable Material Properties and Transient Operation

NASA Technical Reports Server (NTRS)

Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

To gain a deeper understanding of the operation of a thermoelectric couple a set of analytic solutions have been derived for a variable material property couple and a transient couple. Using an analytic approach, as opposed to commonly used numerical techniques, results in a set of useful design guidelines. These guidelines can serve as useful starting conditions for further numerical studies, or can serve as design rules for lab built couples. The analytic modeling considers two cases and accounts for 1) material properties which vary with temperature and 2) transient operation of a couple. The variable material property case was handled by means of an asymptotic expansion, which allows for insight into the influence of temperature dependence on different material properties. The variable property work demonstrated the important fact that materials with identical average Figure of Merits can lead to different conversion efficiencies due to temperature dependence of the properties. The transient couple was investigated through a Greens function approach; several transient boundary conditions were investigated. The transient work introduces several new design considerations which are not captured by the classic steady state analysis. The work helps to assist in designing couples for optimal performance, and also helps assist in material selection.

Band Degeneracy, Low Thermal Conductivity, and High Thermoelectric Figure of Merit in SnTe-CaTe Alloys

NASA Astrophysics Data System (ADS)

Al Rahal Al Orabi, R.; Mecholsky, N.; Hwang, J. P.; Kim, W.; Rhyee, J. S.; Wee, D.; Fornari, M.

Pure lead-free SnTe has limited thermoelectric potentials because of the low Seebeck coeffcients and the relatively large thermal conductivity. In this study, we provide experimental evidence and theoretical understanding that alloying SnTe with Ca greatly improves the transport properties leading to ZT of 1.35 at 873 K, the highest ZT value so far reported for singly doped SnTe materials. The introduction of Ca (0-9%) in SnTe induces multiple effects: (1) Ca replaces Sn and reduces the hole concentration due to Sn vacancies, (2) the energy gap increases limiting the bipolar transport, (3) several bands with larger effective masses become active in transport, and (4) the lattice thermal conductivity is reduced of about 70% due to the contribution of concomitant scattering terms associated with the alloy disorder and the presence of nanoscale precipitates. An effciency of 10% (for ΔT = 400 K) was predicted for high temperature thermoelectric power generation using SnTe-based n- and p-type materials.

Versatile apparatus for thermoelectric characterization of oxides at high temperatures

NASA Astrophysics Data System (ADS)

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G.

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Versatile apparatus for thermoelectric characterization of oxides at high temperatures.

PubMed

Schrade, Matthias; Fjeld, Harald; Norby, Truls; Finstad, Terje G

2014-10-01

An apparatus for measuring the Seebeck coefficient and electrical conductivity is presented and characterized. The device can be used in a wide temperature range from room temperature to 1050 °C and in all common atmospheres, including oxidizing, reducing, humid, and inert. The apparatus is suitable for samples with different geometries (disk-, bar-shaped), allowing a complete thermoelectric characterization (including thermal conductivity) on a single sample. The Seebeck coefficient α can be measured in both sample directions (in-plane and cross-plane) simultaneously. Electrical conductivity is measured via the van der Pauw method. Perovskite-type CaMnO3 and the misfit cobalt oxide (Ca2CoO3)q(CoO2) are studied to demonstrate the temperature range and to investigate the variation of the electrical properties as a function of the measurement atmosphere.

Electronic, thermoelectric and transport properties of cesium cadmium trifluoride: A DFT study

NASA Astrophysics Data System (ADS)

Abraham, Jisha Annie; Pagare, G.; Sanyal, Sankar P.

2018-04-01

The full potential linearized augmented plane wave method based on density functional theory is employed to investigate the electronic structure of CsCdF3. The electronic properties of this compound have been studied from the band structure plot and density of states. The presence of indirect energy gap reveals its insulating nature. Using constant relaxation time, the electrical conductivity, electronic thermal conductivity, Seebeck coefficient and figure of merit are calculated by using Boltzmann transport theory. We have also studied the temperature dependence of thermoelectric properties of this compound.

Prediction for electronic, vibrational and thermoelectric properties of chalcopyrite AgX(X=In,Ga)Te2: PBE + U approach

PubMed Central

Yang, Jianhui; Cheng, Xinlu

2017-01-01

The electronic, vibrational and thermoelectric transport characteristics of AgInTe2 and AgGaTe2 with chalcopyrite structure have been investigated. The electronic structures are calculated using the density-functional theory within the generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof functional considering the Hubbard-U exchange correlation. The band-gaps of AgInTe2 and AgGaTe2 are much larger than previous standard GGA functional results and agree well with the existing experimental data. The effective mass of the hole and the shape of density of states near the edge of the valence band indicate AgInTe2 and AgGaTe2 are considerable p-type thermoelectric materials. An analysis of lattice dynamics shows the low thermal conductivities of AgInTe2 and AgGaTe2. The thermoelectric transport properties' dependence on carrier concentration for p-type AgInTe2 and AgGaTe2 in a wide range of temperatures has been studied in detail. The results show that p-type AgInTe2 and AgGaTe2 at 800 K can achieve the merit values of 0.91 and 1.38 at about 2.12 × 1020 cm−3 and 1.97 × 1020 cm−3 carrier concentrations, respectively. This indicates p-type AgGaTe2 is a potential thermoelectric material at high temperature. PMID:29134079

Prediction for electronic, vibrational and thermoelectric properties of chalcopyrite AgX(X=In,Ga)Te2: PBE + U approach.

PubMed

Yang, Jianhui; Fan, Qiang; Cheng, Xinlu

2017-10-01

The electronic, vibrational and thermoelectric transport characteristics of AgInTe 2 and AgGaTe 2 with chalcopyrite structure have been investigated. The electronic structures are calculated using the density-functional theory within the generalized gradient approximation (GGA) of Perdew-Burke-Ernzerhof functional considering the Hubbard-U exchange correlation. The band-gaps of AgInTe 2 and AgGaTe 2 are much larger than previous standard GGA functional results and agree well with the existing experimental data. The effective mass of the hole and the shape of density of states near the edge of the valence band indicate AgInTe 2 and AgGaTe 2 are considerable p-type thermoelectric materials. An analysis of lattice dynamics shows the low thermal conductivities of AgInTe 2 and AgGaTe 2 . The thermoelectric transport properties' dependence on carrier concentration for p-type AgInTe 2 and AgGaTe 2 in a wide range of temperatures has been studied in detail. The results show that p-type AgInTe 2 and AgGaTe 2 at 800 K can achieve the merit values of 0.91 and 1.38 at about 2.12 × 10 20  cm -3 and 1.97 × 10 20  cm -3 carrier concentrations, respectively. This indicates p-type AgGaTe 2 is a potential thermoelectric material at high temperature.

Prospects of low-dimensional and nanostructured silicon-based thermoelectric materials: findings from theory and simulation

NASA Astrophysics Data System (ADS)

Neophytou, Neophytos

2015-04-01

Silicon based low-dimensional materials receive significant attention as new generation thermoelectric materials after they have demonstrated record low thermal conductivities. Very few works to-date, however, report significant advances with regards to the power factor. In this review we examine possibilities of power factor enhancement in: (i) low-dimensional Si channels and (ii) nanocrystalline Si materials. For low-dimensional channels we use atomistic simulations and consider ultra-narrow Si nanowires and ultra-thin Si layers of feature sizes below 15 nm. Room temperature is exclusively considered. We show that, in general, low-dimensionality does not offer possibilities for power factor improvement, because although the Seebeck coefficient could slightly increase, the conductivity inevitably degrades at a much larger extend. The power factor in these channels, however, can be optimized by proper choice of geometrical parameters such as the transport orientation, confinement orientation, and confinement length scale. Our simulations show that in the case where room temperature thermal conductivities as low as κ l = 2 W/mK are achieved, the ZT figure of merit of an optimized Si low-dimensional channel could reach values around unity. For the second case of materials, we show that by making effective use of energy filtering, and taking advantage of the inhomogeneity within the nanocrystalline geometry, the underlying potential profile and dopant distribution large improvements in the thermoelectric power factor can be achieved. The paper is intended to be a review of the main findings with regards to the thermoelectric performance of nanoscale Si through our simulation work as well as through recent experimental observations.

Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Mele, P.; Saini, S.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Hagino, H.; Ichinose, A.

2013-06-01

We have prepared 2% Al doped ZnO (AZO) thin films on SrTiO3 (STO) and Al2O3 substrates by Pulsed Laser Deposition technique at various deposition temperatures (Tdep = 300 °C-600 °C). Transport and thermoelectric properties of AZO thin films were studied in low temperature range (300 K-600 K). AZO/STO films present superior performance respect to AZO/Al2O3 films deposited at the same temperature, except for films deposited at 400 °C. Best film is the fully c-axis oriented AZO/STO deposited at 300 °C, which epitaxial strain and dislocation density are the lowest: electrical conductivity 310 S/cm, Seebeck coefficient -65 μV/K, and power factor 0.13 × 10-3 W m-1 K-2 at 300 K. Its performance increases with temperature. For instance, power factor is enhanced up to 0.55 × 10-3 W m-1 K-2 at 600 K, surpassing the best AZO film previously reported in literature.

Theoretical Study of Electronic Structure and Thermoelectric Properties of Doped CuAlO2

NASA Astrophysics Data System (ADS)

Poopanya, P.; Yangthaisong, A.; Rattanapun, C.; Wichainchai, A.

2011-05-01

The doping level dependence of thermoelectric properties of delafossite CuAlO2 has been investigated in the constant scattering time ( τ) approximation, starting from the first principles of electronic structure. In particular, the lattice parameters and the energy band structure were calculated using the total energy plane-wave pseudopotential method. It was found that the lattice parameters of CuAlO2 are a = 2.802 Å and c = 16.704 Å, and the internal parameter is u = 0.1097. CuAlO2 has an indirect band gap of 2.17 eV and a direct gap of 3.31 eV. The calculated energy band structures were then used to calculate the electrical transport coefficients of CuAlO2. By considering the effects of doping level and temperature, it was found that the Seebeck coefficient S( T) increases with increasing acceptor doping ( A d) level. The values of S( T) in our experiments correspond to an A d level at 0.262 eV, which is identified as the Fermi level of CuAlO2. Based on our experimental Seebeck coefficient and the electrical conductivity, the constant relaxation time is estimated to be 1 × 10-16 s. The power factor is large for a low A d level and increases with temperature. It is suggested that delafossite CuAlO2 can be considered as a promising thermoelectric oxide material at high doping and high temperature.

Thermoelectric temperature control system for the pushbroom microwave radiometer (PBMR)

NASA Technical Reports Server (NTRS)

Dillon-Townes, L. A.; Averill, R. D.

1984-01-01

A closed loop thermoelectric temperature control system is developed for stabilizing sensitive RF integrated circuits within a microwave radiometer to an accuracy of + or - 0.1 C over a range of ambient conditions from -20 C to +45 C. The dual mode (heating and cooling) control concept utilizes partial thermal isolation of the RF units from an instrument deck which is thermally controlled by thermoelectric coolers and thin film heaters. The temperature control concept is simulated with a thermal analyzer program (MITAS) which consists of 37 nodes and 61 conductors. A full scale thermal mockup is tested in the laboratory at temperatures of 0 C, 21 C, and 45 C to confirm the validity of the control concept. A flight radiometer and temperature control system is successfully flight tested on the NASA Skyvan aircraft.

Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds

DOE PAGES

Hong, A. J.; Li, L.; He, R.; ...

2016-03-07

The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half- Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k codemore » and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley’s deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens’ equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Tidoped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. Lastly, the present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.« less

Full-scale computation for all the thermoelectric property parameters of half-Heusler compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, A. J.; Li, L.; He, R.

The thermoelectric performance of materials relies substantially on the band structures that determine the electronic and phononic transports, while the transport behaviors compete and counter-act for the power factor PF and figure-of-merit ZT. These issues make a full-scale computation of the whole set of thermoelectric parameters particularly attractive, while a calculation scheme of the electronic and phononic contributions to thermal conductivity remains yet challenging. In this work, we present a full-scale computation scheme based on the first-principles calculations by choosing a set of doped half- Heusler compounds as examples for illustration. The electronic structure is computed using the WIEN2k codemore » and the carrier relaxation times for electrons and holes are calculated using the Bardeen and Shockley’s deformation potential (DP) theory. The finite-temperature electronic transport is evaluated within the framework of Boltzmann transport theory. In sequence, the density functional perturbation combined with the quasi-harmonic approximation and the Klemens’ equation is implemented for calculating the lattice thermal conductivity of carrier-doped thermoelectric materials such as Tidoped NbFeSb compounds without losing a generality. The calculated results show good agreement with experimental data. Lastly, the present methodology represents an effective and powerful approach to calculate the whole set of thermoelectric properties for thermoelectric materials.« less

Highly Efficient Multilayer Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Boufelfel, Ali

2006-01-01

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron

Thermoelectric Properties of In-Doped Cu2ZnGeSe4

NASA Astrophysics Data System (ADS)

Chetty, R.; Bali, A.; Femi, O. E.; Chattopadhyay, K.; Mallik, R. C.

2016-03-01

Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A2BCD4 (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1- x In x Se4 ( x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I- 42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to ˜470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit ( zT) of the doped sample showed an increase as compared to the undoped compound.

Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

Investigation of the thermoelectric properties of Nb and oxygen vacancy co-doped SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Gong, Jing; Yuan, Zhanhui; Xu, Shikui; Li, Zhuangzhi; Xu, Jingzhou; Tang, Guide

2017-05-01

High quality Nb doped SrTi1-x Nb x O3 polycrystalline ceramics were fabricated using a conventional solid state reaction method. By annealing in a reducing atmosphere at an elevated temperature, a series of Nb and oxygen vacancy co-doped SrTi1-x Nb x O3-δ (0  ⩽  x  ⩽  0.2) samples was obtained. The thermoelectric properties of the samples were measured in the temperature range from 15 K to 380 K. These measurements showed that the transport behavior of these samples is consistent with the small polaron conduction mechanism for the temperature range from room temperature to 380 K. Furthermore, after annealing, samples with a lower Nb doping were found to give a relative higher ZT value, while excess Nb led to a reduced ZT value. The x  =  0.02 sample gave the optimal thermoelectric properties, with a ZT value of 0.023 at 300 K, and 0.028 at 380 K.

Doping effect on the thermoelectric properties of chalcopyrite CuGaTe2

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Singh, Birender; Kumar, Pradeep

2018-05-01

In the present work, we have investigated the thermoelectric properties of CuGaTe2 by combining the first principle calculations with Boltzmann transport theory. CuGaTe2 is found to be a potential thermoelectric material with Seebeck coefficient 275µVK-1 at 200K. The thermoelectric properties of the compound can be further improved by doping it with p as well as n-type charge carriers. The heavily p-doped and lightly n-doped, CuGaTe2 provides power factor comparable to that of state-of-art Bi2Te3.

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

NASA Astrophysics Data System (ADS)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Low-temperature magnetic properties of greigite (Fe3S4)

NASA Astrophysics Data System (ADS)

Chang, Liao; Roberts, Andrew P.; Rowan, Christopher J.; Tang, Yan; Pruner, Petr; Chen, Qianwang; Horng, Chorng-Shern

2009-01-01

We provide comprehensive low-temperature magnetic results for greigite (Fe3S4) across the spectrum from superparamagnetic (SP) to multidomain (MD) behavior. It is well known that greigite has no low-temperature magnetic transitions, but we also document that it has strong domain-state dependence of magnetic properties at low temperatures. Blocking of SP grains and increasing thermal stability with decreasing temperature is apparent in many magnetic measurements. Thermally stable single-domain greigite undergoes little change in magnetic properties below room temperature. For pseudo-single-domain (PSD)/MD greigite, hysteresis properties and first-order reversal curve diagrams exhibit minor changes at low temperatures, while remanence continuously demagnetizes because of progressive domain wall unpinning. The low-temperature demagnetization is grain size dependent for PSD/MD greigite, with coarser grains undergoing larger remanence loss. AC susceptibility measurements indicate consistent blocking temperatures (TB) for all synthetic and natural greigite samples, which are probably associated with surficial oxidation. Low-temperature magnetic analysis provides much more information about magnetic mineralogy and domain state than room temperature measurements and enables discrimination of individual components within mixed magnetic mineral assemblages. Low-temperature rock magnetometry is therefore a useful tool for studying magnetic mineralogy and granulometry of greigite-bearing sediments.

Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline

NASA Astrophysics Data System (ADS)

Zhang, Peijian; Meng, Yang; Liu, Ziyu; Li, Dong; Su, Tao; Meng, Qingyu; Mao, Qi; Pan, Xinyu; Chen, Dongmin; Zhao, Hongwu

2012-03-01

The thermoelectric properties of the bistable resistance states in Nb doped SrTiO3 single crystal have been investigated. The Seebeck coefficients for both low and high resistance states change linearly with temperature. The three-terminals contrast measurement demonstrates that a large fraction of the voltage drop is applied at the tiny volume near the bottom interface between the electrode and the oxide bulk. Therefore, the metallic oxide bulk plays a dominant role in the temperature dependence of Seebeck coefficients. The thermoelectric properties of new resistance switching (RS) devices with minimized non-RS volume could be exploited for the RS mechanism and novel applications.

Thermoelectric figure of merit of polymeric systems for low-power generators

NASA Astrophysics Data System (ADS)

Cigarini, Luigi; Ruini, Alice; Catellani, Alessandra; Calzolari, Arrigo

2017-10-01

The request of thermoelectric materials for low-power and flexible applications fosters the investigation of the intrinsic electron and thermal transport of conducting polymeric chains, which are building blocks of the complex variety of organic composites proposed in experimental samples. Using calculations from first principles and the Landauer approach for both electron and phonon carriers, we study the thermoelectric figure of merit zT of three representative and largely used polymer chains, namely poly(3,4-ethylenedioxythiophene), polyaniline and polyfluorene. Our results provide an upper-limit estimate of zT, due to the intrinsic electronic and vibrational properties of the selected compounds, and pave the way to a microscopic understanding of the mechanisms that affect their electronic and transport characteristics in terms of structural distortions and chemical doping.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Hui, E-mail: huisun3@iflytek.com; Lu, Xu; Morelli, Donald T.

Boron-added CoSi, CoSi{sub 0.98}B{sub 0.02}, possesses a very high thermoelectric power factor of 60 μW cm{sup −1} K{sup −2} at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02} has been studied. Here, we present a study of the substitutionmore » of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.« less

Fundamental and progress of Bi2Te3-based thermoelectric materials

NASA Astrophysics Data System (ADS)

Hong, Min; Chen, Zhi-Gang; Zou, Jin

2018-04-01

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials.

High doping effect on the thermoelectric properties of p-type lead telluride

NASA Astrophysics Data System (ADS)

Dmitriev, A. V.

2018-04-01

We study theoretically the effect of heavy doping on the thermoelectric properties of p-type PbTe in the acceptor doping interval of 5 × 1019 to 4 × 1020 cm-3 and in the temperature range of 300 to 900 K. In our calculations, a three-band model of the PbTe electron energy spectrum is used that takes into account not only the light electron and hole bands but also the heavy-hole band. This so-called Σ-band plays an important role in the emergence of the figure-of-merit increase in this material at heavy acceptor doping. The calculated thermoelectric characteristics appear to be sensitive to the doping level. An increase in the figure-of-merit up to ZT ≈ 1.3 at 900 K was found at the doping level of 2 × 1020 cm-3. The maximum of ZT on the temperature axis is situated close to the temperature at which the light hole and heavy hole band edges coincide and hence, a prominent density-of-states singularity appears in the valence band, and the Fermi level lies near this singularity.

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2.

PubMed

Huang, Wen; Luo, Xin; Gan, Chee Kwan; Quek, Su Ying; Liang, Gengchiau

2014-06-14

Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) are prototypical layered two-dimensional transition metal dichalcogenide materials, with each layer consisting of three atomic planes. We refer to each layer as a trilayer (TL). We study the thermoelectric properties of 1-4TL MoS2 and WSe2 using a ballistic transport approach based on the electronic band structures and phonon dispersions obtained from first-principles calculations. Our results show that the thickness dependence of the thermoelectric properties is different under n-type and p-type doping conditions. Defining ZT1st peak as the first peak in the thermoelectric figure of merit ZT as doping levels increase from zero at 300 K, we found that ZT1st peak decreases as the number of layers increases for MoS2, with the exception of 2TL in n-type doping, which has a slightly higher value than 1TL. However, for WSe2, 2TL has the largest ZT1st peak in both n-type and p-type doping, with a ZT1st peak value larger than 1 for n-type WSe2. At high temperatures (T > 300 K), ZT1st peak dramatically increases when the temperature increases, especially for n-type doping. The ZT1st peak of n-type 1TL-MoS2 and 2TL-WSe2 can reach 1.6 and 2.1, respectively.

N-type Doped PbTe and PbSe Alloys for Thermoelectric Applications

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor); LaLonde, Aaron (Inventor); Pei, Yanzhong (Inventor); Wang, Heng (Inventor)

2014-01-01

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe.sub.1-xI.sub.x with carrier concentrations ranging from 5.8.times.10.sup.18-1.4.times.10.sup.20 cm.sup.-3.

Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling

NASA Astrophysics Data System (ADS)

Ren, Zongqing; Lee, Jaeho

2018-01-01

Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

Thermal conductivity anisotropy in holey silicon nanostructures and its impact on thermoelectric cooling.

PubMed

Ren, Zongqing; Lee, Jaeho

2018-01-26

Artificial nanostructures have improved prospects of thermoelectric systems by enabling selective scattering of phonons and demonstrating significant thermal conductivity reductions. While the low thermal conductivity provides necessary temperature gradients for thermoelectric conversion, the heat generation is detrimental to electronic systems where high thermal conductivity are preferred. The contrasting needs of thermal conductivity are evident in thermoelectric cooling systems, which call for a fundamental breakthrough. Here we show a silicon nanostructure with vertically etched holes, or holey silicon, uniquely combines the low thermal conductivity in the in-plane direction and the high thermal conductivity in the cross-plane direction, and that the anisotropy is ideal for lateral thermoelectric cooling. The low in-plane thermal conductivity due to substantial phonon boundary scattering in small necks sustains large temperature gradients for lateral Peltier junctions. The high cross-plane thermal conductivity due to persistent long-wavelength phonons effectively dissipates heat from a hot spot to the on-chip cooling system. Our scaling analysis based on spectral phonon properties captures the anisotropic size effects in holey silicon and predicts the thermal conductivity anisotropy ratio up to 20. Our numerical simulations demonstrate the thermoelectric cooling effectiveness of holey silicon is at least 30% greater than that of high-thermal-conductivity bulk silicon and 400% greater than that of low-thermal-conductivity chalcogenides; these results contrast with the conventional perception preferring either high or low thermal conductivity materials. The thermal conductivity anisotropy is even more favorable in laterally confined systems and will provide effective thermal management solutions for advanced electronics.

Thermoelectric Properties of the Chemically Doped Ca3Co4O9 System: A Structural Perspective

NASA Astrophysics Data System (ADS)

Wu, Tao; Tyson, Trevor; Wang, Hsin; Li, Qiang

2010-03-01

Cu doped and Y doped [Ca2CoO3][CoO2]1.61 (referred to as Ca3Co4O9) were prepared by solid state reaction. Temperature dependent thermoelectric properties, resistivity (ρ), Seeback coefficient (S) and thermal conductivity (κ), were measured. As seen before, it is found that doping by Cu and Y significantly enhances the thermoelectric properties. In order to understand the origin of these changes in properties in terms of the atomic structure, synchrotron x-ray diffraction and x-ray absorption spectroscopy were applied to probe the change in the average structure and the location of the dopants. The details of the location and coordination of Co and Y in the host lattice and the effect on the figure of merit are discussed. This work is supported by DOE Grant DE-FG02-07ER46402.

Stretchable and flexible thermoelectric polymer composites

NASA Astrophysics Data System (ADS)

Slobodian, P.; Riha, P.; Matyas, J.; Olejnik, R.

2018-03-01

Polymer composites were manufactured from pristine and oxidized multi-walled carbon nanotubes and ethylene-octene copolymer. The composites had thermoelectric properties and exhibit thermoelectric effect, that is, the conversion of temperature differences into electricity. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy of the multi-walled carbon nanotubes in ethylene-octene copolymer matrix showed that the oxidation with HNO3 or KMnO4 enhanced its p-type electrical conductivity and that the thermoelectric power increase was proportional to the formation of new oxygen-containing functional groups on the surface of carbon nanotubes.

Thermoelectric properties of cerium monopnictides

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Alexander, M. N.; Wood, C.; Lockwood, R. A.; Vandersande, J. W.

1987-01-01

Several cerium pnictides have been synthesized from the pure elements and hot pressed into test samples. Measurements of Seebeck coefficients and electrical resistivities were performed on these samples from room temperature to 1000 C. Cerium arsenide and cerium antimonide are n-type; cerium nitride changes from p-type to n-type conduction at 800 C. The materials are semimetals with resistivities below 1 mohm/cm. Cerium arsenide is the most favorable of the pnictides studied for high-temperature thermoelectric energy conversion, with an average power factor of 15 microW/cm K sq from 500 to 1000 C.

A Low-Cost Production Method of FeSi2 Power Generation Thermoelectric Modules

NASA Astrophysics Data System (ADS)

Inoue, Hiroyuki; Kobayashi, Takahide; Kato, Masahiko; Yoneda, Seiji

2016-03-01

A method is proposed to reduce the production cost of power generation thermoelectric modules. FeSi2 is employed as the thermoelectric material because of its low cost, low environmental load, and oxidation resistance. The raw materials were prepared in the composition of Fe0.96Si2.1Co0.04 for n-type and Fe0.92Si2.1Mn0.08 for p-type, which were added with 0.5 wt.% Cu as the starting materials. They were sintered without pressure at 1446 K to be formed into elements. The Seebeck coefficient and resistivity at room temperature were determined to be -182 μV/K and 0.13 mΩm for n-type, and 338 μV/K and 1.13 mΩm for p-type, respectively. The brazing conditions of the direct joining between the element and the solder were examined. Pastes of BNi-6, BNi-7 or TB-608T were tried as the solder. TB-608T was useable for metallizing of insulation substrates and joining of thermoelectric elements in order to manufacture thermoelectric modules. The joining strength was determined to be 50 MPa between the alumina plate and the elements. No mechanical failure was observed in the modules after repetition of 10 or more exposures to a heat source of 670 K. No change was found in the internal resistance. The present production method will provide modules with high durability and low production cost, which will enable high-power multi-stage cascade modules at a reasonable cost.

Chemical Potential Evaluation of Thermoelectric and Mechanical Properties of Zr2CoZ (Z = Si, Ge) Heusler Alloys

NASA Astrophysics Data System (ADS)

Yousuf, Saleem; Gupta, Dinesh C.

2018-04-01

The electronic, mechanical and thermoelectric properties of Zr2CoZ (Z = Si, Ge) Heusler alloys are investigated by the full-potential linearized augmented plane wave method. Using the Voigt-Reuss approximation, we calculated the various elastic constants, the shear and Young's moduli, and Poisson's ratio which predict the ductile nature of the alloys. Thermoelectric coefficients viz., Seebeck, electrical conductivity and figure of merit show Zr2CoZ alloys as n-type thermoelectric materials showing a linearly increasing Seebeck coefficient with temperature mainly because of the existence of almost flat conduction bands along L to D directions of a high symmetry Brillouin zone. The efficiency of conversion was measured as the figure of merit by taking into effect the lattice thermal part that achieves an upper-limit of 0.14 at 1200 K which may favour their use for waste heat recovery at higher temperatures.

Functionalized Poly(3,4-ethylenedioxy bithiophene) Films for Tuning Electrochromic and Thermoelectric Properties.

PubMed

Hu, Yongjing; Liu, Xiaofang; Jiang, Fengxing; Zhou, Weiqiang; Liu, Congcong; Duan, Xuemin; Xu, Jingkun

2017-10-05

Conductive thiophene-based polymers have garnered great attention for use in organic electron materials such as electrochromic and thermoelectric materials. However, they suffer from poor electron transport properties and long-term stability, leading to limited development eventually. Here, we proposed a strategy of functionalized thiophene-based polymers with oligo(ethylene glycol) or alkyl side chains and synthesized a series of poly(3,4-ethylenedioxy bithiophene)s (PEDTs) to tune their electrochromic and thermoelectric properties. An alkyl group bearing electronic ability at the thiophene ring effectively achieved a large increase in the electrical conductivity with nearly invariable Seebeck coefficient, resulting in an enhancement by 1 order of magnitude for the thermoelectric power factor. Moreover, the electrochromic properties of functionalized PEDTs gained an effective improvement in the optical contrast and coloration efficiency as well as stability with multicolor changes between neutral and oxidized states. The functionalized PEDTs can be proposed as an alternative strategy to tune the electrochromic and thermoelectric properties for organic polymer materials.

The effect of rare earth ions on structural, morphological and thermoelectric properties of nanostructured tin oxide based perovskite materials

NASA Astrophysics Data System (ADS)

Rajasekaran, P.; Alagar Nedunchezhian, A. S.; Yalini Devi, N.; Sidharth, D.; Arivanandhan, M.; Jayavel, R.

2017-11-01

Metal oxide based materials are promising for thermoelectric applications especially at elevated temperature due to their high thermal stability. Recently, perovskite based oxide materials have been focused as a novel thermoelectric material due to their tunable electrical conductivity. Thermoelectric properties of BaSnO3 has been extensively investigated. However, the effect of various rare earth doping on the thermoelectric properties of BaSnO3 is not studied in detail. In the present work, Ba1-x RE x SnO3 (RE  =  La and Sr) materials with x  =  0.05 were prepared by polymerization complex (PC) method in order to study the effect of RE incorporation on the structural, morphological and thermoelectric characteristics of BaSnO3. The structural and morphological properties of the synthesized materials were studied by XRD and TEM analysis. XRD analysis confirmed the mixed phases of the synthesized samples. The TEM images of Ba1-x Sr x SnO3 shows hexagonal and cubic morphology while, Ba1-x La x SnO3 exhibit rod like morphology. Various functional groups of the perovskite material were identified using FTIR analysis. Formation of the perovskite material was further confirmed by XPS analysis. The Seebeck coefficient of Ba0.95La0.05SnO3 was relatively higher than that of Ba0.95Sr0.05SnO3, especially at high temperature. The rod like morphology of Ba0.95La0.05SnO3 may facilitate fast electron transport which results high thermal power compared to Ba0.95Sr0.05SnO3 despite of its poor crystalline nature. The substitution of La3+ on the Ba2+ site could vary the carrier density which results high Seebeck coefficient of Ba0.95La0.05SnO3 compared to Ba0.95Sr0.05SnO3. From the experimental results, it is obvious that Ba0.95La0.05SnO3 could be a promising thermoelectric material for high temperature application.

Thermoelectricity near Anderson localization transitions

NASA Astrophysics Data System (ADS)

Yamamoto, Kaoru; Aharony, Amnon; Entin-Wohlman, Ora; Hatano, Naomichi

2017-10-01

The electronic thermoelectric coefficients are analyzed in the vicinity of one and two Anderson localization thresholds in three dimensions. For a single mobility edge, we correct and extend previous studies and find universal approximants which allow us to deduce the critical exponent for the zero-temperature conductivity from thermoelectric measurements. In particular, we find that at nonzero low temperatures the Seebeck coefficient and the thermoelectric efficiency can be very large on the "insulating" side, for chemical potentials below the (zero-temperature) localization threshold. Corrections to the leading power-law singularity in the zero-temperature conductivity are shown to introduce nonuniversal temperature-dependent corrections to the otherwise universal functions which describe the Seebeck coefficient, the figure of merit, and the Wiedemann-Franz ratio. Next, the thermoelectric coefficients are shown to have interesting dependences on the system size. While the Seebeck coefficient decreases with decreasing size, the figure of merit first decreases but then increases, while the Wiedemann-Franz ratio first increases but then decreases as the size decreases. Small (but finite) samples may thus have larger thermoelectric efficiencies. In the last part we study thermoelectricity in systems with a pair of localization edges, the ubiquitous situation in random systems near the centers of electronic energy bands. As the disorder increases, the two thresholds approach each other, and then the Seebeck coefficient and the figure of merit increase significantly, as expected from the general arguments of Mahan and Sofo [J. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. USA 93, 7436 (1996), 10.1073/pnas.93.15.7436] for a narrow energy range of the zero-temperature metallic behavior.

High-Performance Thermoelectric Semiconductors

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander

1994-01-01

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

Life Testing of Yb14MnSb11 for High Performance Thermoelectric Couples

NASA Technical Reports Server (NTRS)

Paik, Jong-Ah; Brandon, Erik; Caillat, Thierry; Ewell, Richard; Fleurial, Jean-Pierre

2011-01-01

The goal of this study is to verify the long term stability of Yb14MnSb11 for high performance thermoelectric (TE) couples. Three main requirements need to be satisfied to ensure the long term stability of thermoelectric couples: 1) stable thermoelectric properties, 2) stable bonding interfaces, and 3) adequate sublimation suppression. The efficiency of the couple is primarily based on the thermoelectric properties of the materials selected for the couple. Therefore, these TE properties should exhibit minimal degradation during the operating period of the thermoelectric couples. The stability of the bonding is quantified by low contact resistances of the couple interfaces. In order to ensure high efficiency, the contact resistances of the bonding interfaces should be negligible. Sublimation suppression is important because the majority of thermoelectric materials used for power generation have peak figures of merit at temperatures where sublimation rates are high. Controlling sublimation is also essential to preserve the efficiency of the couple. During the course of this research, three different life tests were performed with Yb14MnSb11 coupons. TE properties of Yb14MnSb11 exhibited no degradation after 6 months of aging at 1273K, and the electrical contact resistance between a thin metallization layer and the Yb14MnSb11 remained negligible after 1500hr aging at 1273K. A sublimation suppression layer for Yb14MnSb11 was developed and demonstrated for more than 18 months with coupon testing at 1273K. These life test data indicate that thermoelectric elements based on Yb14MnSb11 are a promising technology for use in future high performance thermoelectric power generating couples.

Novel natural super-lattice materials with low thermal conductivity for thermoelectric applications: A first principles study

NASA Astrophysics Data System (ADS)

Sreeparvathy, P. C.; Kanchana, V.

2017-12-01

A systematic study which reveals the low thermal conductivity and high thermopower on a series of natural superlattice structures in the form BaXFCh (X: Cu, Ag, Ch: S, Se, Te), LaXSO (X: Cu, Ag) and SrCuTeF are presented. Low thermal conductivity is predicted by combining elastic constants and few well established models. The electronic properties reveal the highly two dimensional nature of band structure in the valence band, and this is confirmed through effective mass calculations. The huge difference in effective mass along different crystallographic directions in valence band introduces anisotropy in the transport properties for hole doping, and 'a' axis is found to be more favourable. In addition to these, the parameter A (S2σ/τT/κe /τ), which can decouple the relaxation time is also calculated, and it reveals the possibility of good thermoelectric properties in these compounds. Our results are comparable with prototype thermoelectric materials, and show better values than traditional TE materials.

Phase Transitions of Thermoelectric TAGS-85.

PubMed

Kumar, Anil; Vermeulen, Paul A; Kooi, Bart J; Rao, Jiancun; van Eijck, Lambert; Schwarzmüller, Stefan; Oeckler, Oliver; Blake, Graeme R

2017-12-18

The alloys (GeTe) x (AgSbTe 2 ) 100-x , commonly known as TAGS-x, are among the best performing p-type thermoelectric materials for the composition range 80 ≤ x ≤ 90 and in the temperature range 200-500 °C. They adopt a rhombohedrally distorted rocksalt structure at room temperature and are reported to undergo a reversible phase transition to a cubic structure at ∼250 °C. However, we show that, for the optimal x = 85 composition (TAGS-85), both the structural and thermoelectric properties are highly sensitive to the initial synthesis method employed. Single-phase rhombohedral samples exhibit the best thermoelectric properties but can only be obtained after an annealing step at 600 °C during initial cooling from the melt. Under faster cooling conditions, the samples obtained are inhomogeneous, containing multiple rhombohedral phases with a range of lattice parameters and exhibiting inferior thermoelectric properties. We also find that when the room-temperature rhombohedral phase is heated, an intermediate trigonal structure containing ordered cation vacancy layers is formed at ∼200 °C, driven by the spontaneous precipitation of argyrodite-type Ag 8 GeTe 6 which alters the stoichiometry of the TAGS-85 matrix. The rhombohedral and trigonal phases of TAGS-85 coexist up to 380 °C, above which a single cubic phase is obtained and the Ag 8 GeTe 6 precipitates redissolve into the matrix. On subsequent cooling a mixture of rhombohedral, trigonal, and Ag 8 GeTe 6 phases is again obtained. Initially single-phase samples exhibit thermoelectric power factors of up to 0.0035 W m -1 K -2 at 500 °C, a value that is maintained on subsequent thermal cycling and which represents the highest power factor yet reported for undoped TAGS-85. Therefore, control over the structural homogeneity of TAGS-85 as demonstrated here is essential in order to optimize the thermoelectric performance.

Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

NASA Astrophysics Data System (ADS)

Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Chang, Chia-Chi; Kuo, Yung-Kang

2017-09-01

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Computational modeling and analysis of thermoelectric properties of nanoporous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H.; Yu, Y.; Li, G., E-mail: gli@clemson.edu

2014-03-28

In this paper, thermoelectric properties of nanoporous silicon are modeled and studied by using a computational approach. The computational approach combines a quantum non-equilibrium Green's function (NEGF) coupled with the Poisson equation for electrical transport analysis, a phonon Boltzmann transport equation (BTE) for phonon thermal transport analysis and the Wiedemann-Franz law for calculating the electronic thermal conductivity. By solving the NEGF/Poisson equations self-consistently using a finite difference method, the electrical conductivity σ and Seebeck coefficient S of the material are numerically computed. The BTE is solved by using a finite volume method to obtain the phonon thermal conductivity k{sub p}more » and the Wiedemann-Franz law is used to obtain the electronic thermal conductivity k{sub e}. The figure of merit of nanoporous silicon is calculated by ZT=S{sup 2}σT/(k{sub p}+k{sub e}). The effects of doping density, porosity, temperature, and nanopore size on thermoelectric properties of nanoporous silicon are investigated. It is confirmed that nanoporous silicon has significantly higher thermoelectric energy conversion efficiency than its nonporous counterpart. Specifically, this study shows that, with a n-type doping density of 10{sup 20} cm{sup –3}, a porosity of 36% and nanopore size of 3 nm × 3 nm, the figure of merit ZT can reach 0.32 at 600 K. The results also show that the degradation of electrical conductivity of nanoporous Si due to the inclusion of nanopores is compensated by the large reduction in the phonon thermal conductivity and increase of absolute value of the Seebeck coefficient, resulting in a significantly improved ZT.« less

Thermoelectric Properties of 2D Ni 3(HITP) 2 and 3D Cu 3(BTC) 2 MOFs: First-Principles Studies

DOE PAGES

He, Yuping; Talin, A. Alec; Allendorf, Mark D.

2017-08-08

Metal organic frameworks (MOFs) have recently attracted great attentions for the thermoelectric (TE) applications, owing to their intrinsic low thermal conductivity, but their TE efficiencies are still low due to the poor electronic transport properties. Here, various synthetic strategies have been designed to optimize the electronic properties of MOFs. Using a series of first principle calculations and band theory, we explore the effect of structural topology and redox matching between the metal and coordinated atoms on the TE transport properties. In conclusion, the presented results provide a fundamental guidance for optimizing electronic charge transport of existing MOFs, and for designingmore » yet to be discovered conductive MOFs for thermoelectric applications.« less

Thermoelectric Properties of 2D Ni 3(HITP) 2 and 3D Cu 3(BTC) 2 MOFs: First-Principles Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Yuping; Talin, A. Alec; Allendorf, Mark D.

Metal organic frameworks (MOFs) have recently attracted great attentions for the thermoelectric (TE) applications, owing to their intrinsic low thermal conductivity, but their TE efficiencies are still low due to the poor electronic transport properties. Here, various synthetic strategies have been designed to optimize the electronic properties of MOFs. Using a series of first principle calculations and band theory, we explore the effect of structural topology and redox matching between the metal and coordinated atoms on the TE transport properties. In conclusion, the presented results provide a fundamental guidance for optimizing electronic charge transport of existing MOFs, and for designingmore » yet to be discovered conductive MOFs for thermoelectric applications.« less

Thermoelectric properties of n-type SrTiO 3

DOE PAGES

Sun, Jifeng; Singh, David J.

2016-05-26

We present an investigation of the thermoelectric properties of cubic perovskite SrTiO 3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO 3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high ZT at optimized doping and suggests that the ZT value can reach 0.7 at T = 1400 K. Thus ZT can be improved from the current experimental values by carrier concentration optimization.

Thermoelectric properties of n-type SrTiO3

NASA Astrophysics Data System (ADS)

Sun, Jifeng; Singh, David J.

2016-10-01

We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high ZT at optimized doping and suggests that the ZT value can reach 0.7 at T = 1400 K. Thus ZT can be improved from the current experimental values by carrier concentration optimization.

Thermoelectric transport properties of nanostructured FeSb 2 and Ce-based heavy-fermions CeCu and CeAl 3

NASA Astrophysics Data System (ADS)

Pokharel, Mani R.

Thermoelectric (TE) energy conversion is an all-solid-state technology which can convert waste thermal energy into useful electric power and cool ambience without using harmful gases like CFC. Due to their several advantages over traditional energy conversion technologies, thermoelectric generators (TEG) and coolers (TEC) have drawn enormous research efforts. The objective of this work is to find promising materials for thermoelectric cooling applications and optimize their thermoelectric performances. Finding a material with a good value for the thermoelectric figure-of-merit (ZT) at cryogenic temperatures, specifically below 77 K, has been of great interest. This work demonstrates that FeSb2 1, CeCu6 2 and CeAl3 3, all belonging to a class of materials with strongly correlated electron behavior; exhibit promising thermoelectric properties below 77 K. In general, ZT of a TE material can be increased using two basic approaches: lattice thermal conductivity reduction and power factor (PF) enhancement. The results of this study indicate that nanostructuring effectively decreases the thermal conductivity of FeSb2, CeCu6 and CeAl 3 leading to improved ZT. The approach of introducing point-defect scattering to further reduce the thermal conductivity is successfully implemented for Te-substituted FeSb2 nanostructured samples 4. A semiconductor/metal interface has long been proposed to exhibit enhanced thermoelectric properties. We use this technique by introducing Ag-nanoparticles in the host FeSb2 which further increases ZT by 70% 5. Additionally, a detailed investigation is made on the phonon-drag effect as a possible mechanism responsible for the large value of the Seebeck coefficient of FeSb2 6. We show that the phonon-drag mechanism contributes significantly to the large Seebeck effect in FeSb2 and hence this effect cannot be minor as was proposed in literatures previously. A model based on Kapitza-resistance and effective medium approach (EMA) is used to analyze

Improvement of electronic and thermoelectric properties of the metallic LaS by sodium substitution: From first-principles calculations

NASA Astrophysics Data System (ADS)

Si Mohammed, D. E.; Seddik, T.; Batouche, M.; Merabiha, O.; Zanoun, A.

2018-03-01

In this manuscript, the structural, electronic, and thermoelectric properties of Na doped binary LaS have been studied by means of the full-potential augmented plane wave plus local orbital's method. The Wu-Cohen generalized gradient and the Tran-Blaha modified Becke-Johnson (TB-mBJ) approximations have been employed to describe the exchange-correlation potential. Examining the composition effect on the electronic properties, we point out that LaS compound and Na0.25La0.75S alloy have a metallic behavior. On the other hand, both Na0.5La0.5S and Na0.75La0.25S alloys show a semiconductor behavior with direct bandgap equal to 1.26 and 2.8 eV, using the TB-mBJ approximation, respectively. Moreover, the thermoelectric properties of LaS are enhanced, especially for 50% and 75% of Na concentration. Consequently, the estimated ZT value of about 0.75 at room temperature proves that Na doped metal LaS makes it a promising candidate for thermoelectric applications.

The influence of surface functionalization on thermal transport and thermoelectric properties of MXene monolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarikurt, Sevil; Çakır, Deniz; Keçeli, Murat

The structural model ( i.e. adsorption site of oxygen atom on the surface of MXene) has a paramount impact on the electronic and thermoelectric properties of MXene crystals, which can be exploited to engineer the thermoelectric properties of these materials.

The influence of surface functionalization on thermal transport and thermoelectric properties of MXene monolayers

DOE PAGES

Sarikurt, Sevil; Çakır, Deniz; Keçeli, Murat; ...

2018-01-01

The structural model ( i.e. adsorption site of oxygen atom on the surface of MXene) has a paramount impact on the electronic and thermoelectric properties of MXene crystals, which can be exploited to engineer the thermoelectric properties of these materials.

Thermoelectricity in transition metal compounds: The role of spin disorder

DOE PAGES

Gorai, Prashun; Toberer, Eric S.; Stevanović, Vladan

2016-11-01

Here, at room temperature and above, most magnetic materials adopt a spin-disordered (paramagnetic) state whose electronic properties can differ significantly from their low-temperature, spin-ordered counterparts. Yet computational searches for new functional materials usually assume some type of magnetic order. In the present work, we demonstrate a methodology to incorporate spin disorder in computational searches and predict the electronic properties of the paramagnetic phase. We implement this method in a high-throughput framework to assess the potential for thermoelectric performance of 1350 transition-metal sulfides and find that all magnetic systems we identify as promising in the spin-ordered ground state cease to bemore » promising in the paramagnetic phase due to disorder-induced deterioration of the charge carrier transport properties. We also identify promising non-magnetic candidates that do not suffer from these spin disorder effects. In addition to identifying promising materials, our results offer insights into the apparent scarcity of magnetic systems among known thermoelectrics and highlight the importance of including spin disorder in computational searches.« less

Enhanced thermoelectric properties of N-type polycrystalline In4Se3-x compounds via thermally induced Se deficiency

NASA Astrophysics Data System (ADS)

Zhao, Ran; Shu, Yu-Tian; Guo, Fu

2014-03-01

In4Se3-x compound is considered as a potential thermoelectric material due to its comparably low thermal conductivity among all existing ones. While most studies investigated In4Se3-x thermoelectric properties by controlling selennium or other dopants concentrations, in the current study, it was found that even for a fixed initial In/Se ratio, the resulting In/Se ratio varied significantly with different thermal processing histories (i.e., melting and annealing), which also resulted in varied thermoelectric properties as well as fracture surface morphologies of In4Se3-x polycrystalline specimens. Single phase polycrystalline In4Se3-x compounds were synthesized by combining a sequence of melting, annealing, pulverizing, and spark plasma sintering. The extension of previous thermal history was observed to significantly improve the electrical conductivity (about 121%) and figure of merit (about 53%) of In4Se3-x polycrystalline compounds. The extended thermal history resulted in the increase of Se deficiency (x) from 0.39 to 0.53. This thermally induced Se deficiency was observed to associate with increasing carrier mobility but decreasing concentration, which differs from the general trend observed for the initially adjusted Se deficiency at room temperature. Unusually large dispersed grains with nanosize layers were observed in specimens with the longest thermal history. The mechanism(s) by which previous thermal processing enhances carrier mobility and affect microstructural evolution are briefly discussed.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo1-x NixO3 (0 <= x <= 0.07) prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Liu, Yi; Li, Hai-Jin; Zhang, Qing; Li, Yong; Liu, Hou-Tong

2013-05-01

Electrical transport and thermoelectric properties of Ni-doped YCo1-xNixO3(0 <= x <= 0.07), prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo1-xNixO3 decrease, but carrier concentration increases. The temperature dependences of the resistivity for YCo1-xNixO3 are found to follow a relation of ln ρ ∝ 1/T in a low-temperature range (LTR) (T < ~ 304 K for x = 0; ~ 230 K < T < ~ 500 K for x = 0.02, 0.05, and 0.07) and high-temperature range (HTR) (T > ~ 655 K for all compounds), respectively. The estimated apparent activation energies for conduction Ea1 in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures (T < ~230 K), Mott's law is observed for YCo1—xNixO3 (x >= 0.02), indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCo1-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.02O3, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.

Enhanced stability and thermoelectric figure-of-merit in copper selenide by lithium doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Stephen Dongmin; Pöhls, Jan-Hendrik; Aydemir, Umut

Superionic thermoelectric materials have been shown to have high figure-of-merits, leading to expectations for efficient high-temperature thermoelectric generators. These compounds exhibit extremely high cation diffusivity, comparable to that of a liquid, which is believed to be associated with the low thermal conductivity that makes superionic materials good for thermoelectrics. However, the superionic behavior causes cation migration that leads to device deterioration, being the main obstacle for practical applications. It has been reported that lithium doping in superionic Cu2-xSe leads to suppression of the Cu ion diffusivity, but whether the material will retain the promising thermoelectric properties had not yet beenmore » investigated. Here, we report a maximum zT>1.4 from Li0.09Cu1.9Se, which is higher than what we find in the undoped samples. The high temperature effective weighted mobility of the doped sample is found higher than Cu2-xSe, while the lattice thermal conductivity remains similar. We find signatures of suppressed bipolar conduction due to an enlarged band gap. Our findings set forth a possible route for tuning the stability of superionic thermoelectric materials.« less

The mechanical, optoelectronic and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys

NASA Astrophysics Data System (ADS)

Hamioud, Farida; Mubarak, A. A.

2017-09-01

First-principle calculations are performed using DFT as implemented in Wien2k code to compute the mechanical, electronic, optical and thermoelectric properties of NiYSn (Y = Zr and Hf) alloys. The computed lattice constants, bulk modulus and cohesive energy of these alloys at 0 K and 0 GPa are performed. NiZrSn and NiHfSn are found to be anisotropic and elastically stable. Furthermore, both alloys are confirmed to be thermodynamically stable by the calculated values of the standard enthalpy of formation. The Young’s and shear moduli values show that NiZrSn seems to be stiffer than NiHfSn. The optical properties are performed using the dielectric function. Some beneficial optoelectronic applications are found as exposed in the optical spectra. Moreover, the alloys are classified as good insulators for solar heating. The thermoelectric properties as a function of temperature are computed utilizing BoltzTrap code. The major charge carriers are found to be electrons and the alloys are classified as p-type doping alloys.

Phase Segregation and Superior Thermoelectric Properties of Mg2Si(1-x)Sb(x) (0 ≤ x ≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis.

PubMed

Zhang, Qiang; Su, Xianli; Yan, Yonggao; Xie, Hongyao; Liang, Tao; You, Yonghui; Tang, Xinfeng; Uher, Ctirad

2016-02-10

A series of Sb-doped Mg2Si(1-x)Sb(x) compounds with the Sb content x within 0 ≤ x ≤ 0.025 were prepared by self-propagating high-temperature synthesis (SHS) combined with plasma activated sintering (PAS) method in less than 20 min. Thermodynamic parameters of the SHS process, such as adiabatic temperature, ignition temperature, combustion temperature, and propagation speed of the combustion wave, were determined for the first time. Nanoprecipitates were observed for the samples doped with Sb. Thermoelectric properties were characterized in the temperature range of 300-875 K. With the increasing content of Sb, the electrical conductivity σ rises markedly while the Seebeck coefficient α decreases, which is attributed to the increase in carrier concentration. The carrier mobility μ(H) decreases slightly with the increasing carrier concentration but remains larger than the Sb-doped samples prepared by other methods, which is ascribed to the self-purification process associated with the SHS synthesis. In spite of the increasing electrical conductivity with the increasing Sb content x, the overall thermal conductivity κ decreases on account of a significantly falled lattice thermal conductivity κ(L) due to the strong point defect scattering on Sb impurities and possibly enhanced interface scattering on nanoprecipitates. As a result, the sample with x = 0.02 achieves the thermoelectric figure of merit ZT ∼ 0.65 at 873 K, one of the highest values for the Sb-doped binary Mg2Si compounds investigated so far. A subsequent annealing treatment on the sample with x = 0.02 at 773 K for 7 days has resulted in no noticeble changes in the thermoelectric transport properties, indicating an excellent thermal stability of the compounds prepared by the SHS method. Therefore, SHS method can serve as an effective alternative fabrication route to synthesize Mg-Si based themoelectrics and some other functional materials due to the resulting high performance, perfect thermal

Investigation of reduced (Srx,Ba1-x)Nb 2O6 as a ferroelectric-based thermoelectric

NASA Astrophysics Data System (ADS)

Bock, Jonathan A.

A comprehensive study of a novel type of thermoelectric - a heavily doped material from a ferroelectric base composition - is presented. Due to the low-lying optic modes and scattering of phonons at domain walls, ferroelectrics make interesting candidates for thermoelectrics. The example of (Srx,Ba1-x)Nb2O6-delta (SBN) is explored in detail due to a report of an impressive thermoelectric figure of merit in single crystals. The goal of this research is to understand the source of the large figure of merit in SBN. In attempts to do this, the electron transport mechanism, the coupling between electron transport and ferroelectricity, the phase equilibria, and the single crystalline thermoelectric properties were investigated under various reduction conditions. It was found that the electron transport properties of a normal ferroelectric SBN can be well explained by activation of electrons into the conduction band from a localized impurity band. SBN can be shifted between a normal and relaxor ferroelectric by changing the Sr:Ba ratio. This property of SBN was utilized to study the effect of relaxor ferroelectricity on electron transport. Within the relaxor ferroelectric regime, a change in the activation energy for electronic conduction and an abnormal temperature dependence of the Seebeck coefficient were found. These properties are attributed to Anderson localization caused by the relaxor ferroelectricity. This is not thought to be the cause of the large thermoelectric figure of merit. The electron transport-ferroelectric coupling was also studied in oxygen deficient (Bax,Sr1-x)TiO3-delta (BST). A metallic-like to nonmetallic transition occurs at the ferroelectric transition, and the temperature of the metallic-like to nonmetallic transition can be shifted via Sr doping. The temperature shift on Sr doping is equivalent to the shift in the paraelectric ferroelectric transition temperature in unreduced samples, showing that the ferroelectric transition is the cause of

May quasicrystals be good thermoelectric materials?

NASA Astrophysics Data System (ADS)

Maciá, Enrique

2000-11-01

We present a theoretical analysis of quasicrystals (QCs) as potential thermoelectric materials. We consider a self-similar density of states model and extend the framework introduced in [G. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)] to systems exhibiting correlated features in their electronic structure. We show that relatively high values of the thermoelectric figure of merit, ranging from 0.01 up to 1.6 at room temperature, may be expected for these systems. We compare our results with available experimental data on transport properties of QCs and suggest some potential candidates for thermoelectric applications.

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method andmore » the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.« less

Thermoelectric Properties of Electron-Doped SrMnO3 Single Crystals with Perovskite Structure

NASA Astrophysics Data System (ADS)

Suzuki, T.; Sakai, H.; Taguchi, Y.; Tokura, Y.

2012-06-01

Thermoelectric properties have been investigated for single crystals of Sr(Mn1- x Mo x )O3 with the perovskite structure. Similar to (Sr1- x Ce x )MnO3, the Seebeck coefficient for lightly electron-doped compounds ( x ≤ 0.01) is enhanced upon G-type antiferromagnetic ordering, while maintaining metallic conduction. This results in enhancement of the figure of merit ( ZT). On the other hand, the Seebeck coefficient for the more electron-doped compound ( x = 0.025) changes sign from negative to positive within a spin and orbital ordered phase (with C-type antiferromagnetic configuration and Mn 3 z 2 - r 2 type orbital order) as the temperature is lowered, whereas the Hall coefficient remains negative in the whole temperature range. The enhancement of the ZT value in the G-type antiferromagnetic phase implies the possibility for improvement of the thermoelectric efficiency by using the coupling between charge, spin, orbital, and lattice degrees of freedom in strongly correlated electron systems.

Synthesis and Characterization of Rare-Earth Tellurides and Their Composites For High-Temperature Thermoelectric Applications

NASA Astrophysics Data System (ADS)

Cheikh, Dean

Radioisotope thermoelectric generators (RTGs) are solid-state energy conversion devices and have been a vital power generation technology for deep space missions conducted by the National Aeronautics and Space Administration (NASA). At the heart of these generators are thermoelectric materials that convert heat given off by a radioisotope decay into electricity through the Seebeck effect. While these systems have demonstrated long-term reliability, the current state-of-practice materials have thermoelectric figures of merit, ZT, near 1, leading to low system level efficiencies of 6.5%. The figure of merit is defined as ZT = sigmaS 2/kappa T where sigma, S, kappa, and T are electrical conductivity, Seebeck coefficient, thermal conductivity, and temperature, respectively. Development of higher ZT materials would enable future NASA missions to perform a greater number of scientific experiments and extend mission lifetimes. Lanthanum telluride (La3-xTe4) is a state-of-the-art n-type high-temperature thermoelectric material, with a ZT of 1.1 at 1275 K. It has been demonstrated that the electrical resistivity and Seebeck coefficient of this material can be decoupled when nickel inclusions are added to form a composite. This new phenomenon, known as composite assisted funneling of electrons (CAFE), allows for the resistivity of the composite to decrease while leaving the Seebeck coefficient unaffected when 12-15 vol% nickel was incorporated. The initial work presented in this dissertation focused on microstructural modifications to La3-xTe4-Ni composites to attain a better understanding of the CAFE mechanism. This investigation was conducted by varying the size of the nickel particles compared to what were used in the previous composite study. A 60% increase in ZT to a value of 1.9 at 1200 K for the composites with the smallest Ni particle size was obtained due to an increased Seebeck coefficient and decreased thermal conductivity. The next study focused on the extension

Enhancing thermoelectric properties of organic composites through hierarchical nanostructures

PubMed Central

Zhang, Kun; Zhang, Yue; Wang, Shiren

2013-01-01

Organic thermoelectric (TE) materials are very attractive due to easy processing, material abundance, and environmentally-benign characteristics, but their potential is significantly restricted by the inferior thermoelectric properties. In this work, noncovalently functionalized graphene with fullerene by π-π stacking in a liquid-liquid interface was integrated into poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate). Graphene helps to improve electrical conductivity while fullerene enhances the Seebeck coefficient and hinders thermal conductivity, resulting in the synergistic effect on enhancing thermoelectric properties. With the integration of nanohybrids, the electrical conductivity increased from ~10000 to ~70000 S/m, the thermal conductivity changed from 0.2 to 2 W·K−1m−1 while the Seebeck coefficient was enhanced by around 4-fold. As a result, nanohybrids-based polymer composites demonstrated the figure of merit (ZT) as high as 6.7 × 10−2, indicating an enhancement of more than one order of magnitude in comparison to single-phase filler-based polymer composites with ZT at the level of 10−3. PMID:24336319

Thermoelectric properties optimization of Fe{sub 2}VGa by tuning electronic density of states via titanium doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Pai-Chun, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw; Huang, Ta-Sung; Chen, Yang-Yuan, E-mail: pcwei68@gmail.com, E-mail: cheny2@phys.sinica.edu.tw

2015-10-28

We report the correlation between thermoelectric properties and electronic band structure of thermoelectric Heusler alloy Fe{sub 2}V{sub 1-x}Ti{sub x}Ga by comparing experimental measurements with theoretical calculations. The electrical resistivity data show that the semiconducting-like behavior of pure Fe{sub 2}VGa is transformed to a more metallic-like behavior at x = 0.1. Meanwhile, an enhancement of the Seebeck coefficient was observed for all Ti doped specimens at elevated temperatures with a peak value of 57 μV/K for x = 0.05 at 300 K. The experimental results can be elucidated by the calculated band structure, i.e., a gradual shifting of the Fermi level from the middle of the pseudogapmore » to the region of valence bands. With optimized doping, the thermoelectric power factor can be significantly enhanced to 3.95 mW m{sup −1} K{sup −2} at room temperature, which is comparable to the power factors of Bi{sub 2}Te{sub 3}-based compounds. The synergy of thermal conductivity reduction due to the alloying effect and the significant increase of the thermoelectric power factor leads to higher order zT values than that of prime Fe{sub 2}VGa.« less

Theoretical and experimental investigations of the thermoelectric properties of Bi{sub 2}S{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chmielowski, Radoslaw, E-mail: chmielowski@imra-europe.com; Péré, Daniel; Jacob, Stéphane

2015-03-28

Electronic and transport properties of Bi{sub 2}S{sub 3} with various dopants are studied using density functional theory and experimental characterizations. First, principle calculations of thermoelectric properties are used to evaluate the thermoelectric potential of the orthorhombic Bi{sub 2}S{sub 3} structure. The computational screening of extrinsic defects is used to select the most favorable n-type dopants. Among all the dopants considered, hafnium and chlorine are identified as prospective dopants, whereas, e.g., germanium is found to be unfavorable. This is confirmed by experiment. Seebeck coefficient (S) and electrical conductivity (σ) measurements are performed at room temperature on pellets obtained by spark plasmamore » sintering. An increase of power factors (S{sup 2}·σ) from around 50 up to 500 μW K{sup −2} m{sup −1} is observed for differently doped compounds. In several series of samples, we observed an optimum of power factor above 500 μW K{sup −2} m{sup −1} at room temperature for a chlorine equivalence of 0.25 mol. % BiCl{sub 3}. The obtained results are plotted on a semilogarithmic log (σ) versus S graph to demonstrate that a very strong linear trend that limits the power factor around 500 μW K{sup −2} m{sup −1} exists. Further improvement of Bi{sub 2}S{sub 3} as thermoelectric material will require finding new doping modes that will break through the observed trend. The results of stability tests demonstrate that properties of optimally doped Bi{sub 2}S{sub 3} are stable.« less

Carbon-Nanotube-Based Thermoelectric Materials and Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blackburn, Jeffrey L.; Ferguson, Andrew J.; Cho, Chungyeon