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Sample records for magnetoresistive heat switch

  1. A Magnetoresistive Heat Switch for the Continuous ADR

    NASA Technical Reports Server (NTRS)

    Canavan, E. R.; Dipirro, M. J.; Jackson, M.; Panek, J.; Shirron, P. J.; Tuttle, J. G.; Krebs, C. (Technical Monitor)

    2001-01-01

    In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.

  2. Performance of a fast response miniature Adiabatic Demagnetisation Refrigerator using a single crystal tungsten magnetoresistive heat switch

    NASA Astrophysics Data System (ADS)

    Bartlett, J.; Hardy, G.; Hepburn, I. D.

    2015-12-01

    The performance of a fast thermal response miniature Adiabatic Demagnetisation Refrigerator (ADR) is presented. The miniature ADR is comprised of a fast thermal response Chromium Potassium Alum (CPA) salt pill, two superconducting magnets and unconventionally, a single crystal tungsten magnetoresistive (MR) heat switch. The development of this ADR is a result of the ongoing development of a continuously operating millikelvin cryocooler (mKCC), which will use only magnetoresistive heat switches. The design and performance of the MR heat switch developed for the mKCC and used in the miniature ADR is presented in this paper; the heat switch has a measured Residual Resistivity Ratio of 32,000 ± 3000 and an estimated switching ratio (on thermal conductivity divided by the off thermal conductivity) of 15,200 at 3.6 K and 38,800 at 0.2 K when using a 3 T magnetic field. The performance of the miniature ADR operating from a 3.6 K bath is presented, demonstrating that a complete cycle (magnetisation, cooling to the bath and demagnetisation) can be accomplished in 82 s. A magnet current step test, conducted when the ADR is cold and fully demagnetised, has shown the thermal response of the ADR to be sub-second. The measured hold times of the ADR with just parasitic heat load are given, ranging from 3 min at 0.2 K with 13.14 μW of parasitics, to 924 min at 3 K with 4.55 μW of parasitics. The cooling power has been measured for operating temperatures in the range 0.25-3 K by applying an additional heat load to the ADR via a heater, in order to reduce the hold time to 3 min (i.e. approximately double the recycle time); the maximum cooling power of the miniature ADR (in addition to parasitic load) when operating at 250 mK is 20 μW, which increases to 45 μW at 300 mK and continues to increase linearly to nearly 1.1 mW at 3 K. To conclude, the predicted performance of a tandem continuous ADR utilising two of the miniature ADRs is presented.

  3. Heat Switches for ADRs

    NASA Technical Reports Server (NTRS)

    DiPirro, M. J.; Shirron, P. J.

    2014-01-01

    Heat switches are key elements in the cyclic operation of Adiabatic Demagnetization Refrigerators (ADRs). Several of the types of heat switches that have been used for ADRs are described in this paper. Key elements in selection and design of these switches include not only ON/OFF switching ratio, but also method of actuation, size, weight, and structural soundness. Some of the trade-off are detailed in this paper.

  4. Heat switches for ADRs

    NASA Astrophysics Data System (ADS)

    DiPirro, M. J.; Shirron, P. J.

    2014-07-01

    Heat switches are key elements in the cyclic operation of Adiabatic Demagnetization Refrigerators (ADRs). Several of the types of heat switches that have been used for ADRs are described in this paper. Key elements in selection and design of these switches include not only ON/OFF switching ratio, but also method of actuation, size, weight, and structural soundness. Some of the trade-off are detailed in this paper.

  5. Heat pipe thermal switch

    NASA Technical Reports Server (NTRS)

    Wolf, D. A. (Inventor)

    1983-01-01

    A thermal switch for controlling the dissipation of heat between a body is described. The thermal switch is comprised of a flexible bellows defining an expansible vapor chamber for a working fluid located between an evaporation and condensation chamber. Inside the bellows is located a coiled retaining spring and four axial metal mesh wicks, two of which have their central portions located inside of the spring while the other two have their central portions located between the spring and the side wall of the bellows. The wicks are terminated and are attached to the inner surfaces of the outer end walls of evaporation and condensation chambers respectively located adjacent to the heat source and heat sink. The inner surfaces of the end walls furthermore include grooves to provide flow channels of the working fluid to and from the wick ends. The evaporation and condensation chambers are connected by turnbuckles and tension springs to provide a set point adjustment for setting the gap between an interface plate on the condensation chamber and the heat sink.

  6. Heat-transfer thermal switch

    NASA Technical Reports Server (NTRS)

    Friedell, M. V.; Anderson, A. J.

    1974-01-01

    Thermal switch maintains temperature of planetary lander, within definite range, by transferring heat. Switch produces relatively large stroke and force, uses minimum electrical power, is lightweight, is vapor pressure actuated, and withstands sterilization temperatures without damage.

  7. All-optical switching of magnetoresistive devices using telecom-band femtosecond laser

    SciTech Connect

    He, Li; Chen, Jun-Yang; Wang, Jian-Ping E-mail: moli@umn.edu; Li, Mo E-mail: moli@umn.edu

    2015-09-07

    Ultrafast all-optical switching of the magnetization of various magnetic systems is an intriguing phenomenon that can have tremendous impact on information storage and processing. Here, we demonstrate all-optical switching of GdFeCo alloy films using a telecom-band femtosecond fiber laser. We further fabricate Hall cross devices and electrically readout all-optical switching by measuring anomalous Hall voltage changes. The use of a telecom laser and the demonstrated all-optical switching of magnetoresistive devices represent the first step toward integration of opto-magnetic devices with mainstream photonic devices to enable novel optical and spintronic functionalities.

  8. Gas adsorption/absorption heat switch, phase 1

    NASA Technical Reports Server (NTRS)

    Chan, C. K.

    1987-01-01

    The service life and/or reliability of far-infrared sensors on surveillance satellites is presently limited by the cryocooler. The life and/or reliability, however, can be extended by using redundant cryocoolers. To reduce parasitic heat leak, each stage of the inactive redundant cryocooler must be thermally isolated from the optical system, while each stage of the active cryocooler must be thermally connected to the system. The thermal break or the thermal contact can be controlled by heat switches. Among different physical mechanisms for heat switching, mechanically activated heat switches tend to have low reliability and, furthermore, require a large contact force. Magnetoresistive heat switches are, except at very low temperatures, of very low efficiency. Heat switches operated by the heat pipe principle usually require a long response time. A sealed gas gap heat switch operated by an adsorption pump has no mechanical motion and should provide the reliability and long lifetime required in long-term space missions. Another potential application of a heat switch is the thermal isolation of the optical plane during decontamination.

  9. A Piezoelectric Cryogenic Heat Switch

    NASA Technical Reports Server (NTRS)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-01-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

  10. Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

    NASA Astrophysics Data System (ADS)

    Göckeritz, Robert; Homonnay, Nico; Müller, Alexander; Fuhrmann, Bodo; Schmidt, Georg

    2016-04-01

    Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

  11. A piezoelectric cryogenic heat switch

    NASA Astrophysics Data System (ADS)

    Jahromi, Amir E.; Sullivan, Dan F.

    2014-06-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios of about 100-200 at lowest and highest measures temperature were achieved when the positioner applied its maximum force of 8 N, respectively. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an ideal PZHS.

  12. A piezoelectric cryogenic heat switch.

    PubMed

    Jahromi, Amir E; Sullivan, Dan F

    2014-06-01

    We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios of about 100-200 at lowest and highest measures temperature were achieved when the positioner applied its maximum force of 8 N, respectively. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an ideal PZHS. PMID:24985863

  13. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

    PubMed Central

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-01-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds. PMID:27585644

  14. Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.

    PubMed

    Li, Xiaoli; Jia, Juan; Li, Yanchun; Bai, Yuhao; Li, Jie; Shi, Yana; Wang, Lanfang; Xu, Xiaohong

    2016-01-01

    Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds. PMID:27585644

  15. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

    PubMed Central

    Liu, Houfang; Wang, Ran; Guo, Peng; Wen, Zhenchao; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Ji, Yang; Zhang, Shufeng

    2015-01-01

    Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices. PMID:26658213

  16. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

    NASA Astrophysics Data System (ADS)

    Liu, Houfang; Wang, Ran; Guo, Peng; Wen, Zhenchao; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Ji, Yang; Zhang, Shufeng

    2015-12-01

    Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices.

  17. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.

    PubMed

    Liu, Houfang; Wang, Ran; Guo, Peng; Wen, Zhenchao; Feng, Jiafeng; Wei, Hongxiang; Han, Xiufeng; Ji, Yang; Zhang, Shufeng

    2015-01-01

    Magnetization switching between parallel and antiparallel alignments of two magnetic layers in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external magnetic field or by an electric current. Here, we report that the manipulation of magnetization switching and tunnel magnetoresistance (TMR) in perpendicularly magnetized CoFeB/MgO/CoFeB MTJs can be achieved by both temperature and voltage. At a certain range of temperature, coercivity crossover between top and bottom magnetic layers is observed in which the TMR ratio of the MTJs is almost unmeasurable. Furthermore, the temperature range can be tuned reversibly by an electric voltage. Magnetization switching driven by the voltage reveals an unconventional phenomenon such that the voltage driven coercivity changes with temperature are quite different for top and bottom CoFeB layers. A model based on thermally-assisted domain nucleation and propagation is developed to explain the frequency and temperature dependence of coercivity. The present results of controlling the magnetization switching by temperature and voltage may provide an alternative route for novel applications of MTJs based spintronic devices. PMID:26658213

  18. Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory

    NASA Astrophysics Data System (ADS)

    Otsuka, Shintaro; Hamada, Yoshifumi; Ito, Daisuke; Shimizu, Tomohiro; Shingubara, Shoso

    2015-05-01

    Ferromagnetic conductive filaments (CFs) were formed in a conductive-bridge random access memory (CBRAM) with a Ni electrode using high current compliances during a set process. We investigated CFs in a Ni/HfO2/Pt CBRAM using the current compliance dependences of the set process, low-temperature characteristics, and anisotropic magnetoresistance (AMR). Set processes occurred when a positive bias was applied to the Ni electrode only; therefore, the switching phenomena showed polarity. The resistance of the ON state (low resistance state) was dependent on the current compliance between 2 and 5 mA. The ON state of the device showed a metallic conduction property, suggested by the temperature dependence of resistance. When a high current compliance (5 mA) was used for programming, the ON state showed AMR, which was direct evidence of ferromagnetic CF formation. This suggests that the formation of a ferromagnetic CF is associated with the accumulation of Ni ions that diffused from the Ni electrode. The OFF-state (high resistance state) resistance slightly increased with decreasing temperature and AMR was not observed.

  19. A heat-switch-based electrocaloric cooler

    NASA Astrophysics Data System (ADS)

    Wang, Y. D.; Smullin, S. J.; Sheridan, M. J.; Wang, Q.; Eldershaw, C.; Schwartz, D. E.

    2015-09-01

    A heat-switch-based electrocaloric cooler is reported in this letter. The device consists of two silicon heat switches and an electrocaloric module based on BaTO3 multilayer capacitors (MLCs). To operate the cooler, the heat switches are actuated synchronously with the application of electric fields across the MLCs. Heat flux versus temperature lift is fully characterized. With an electric field strength of 277 kV/cm, the system achieves a maximum heat flux of 36 mW and maximum temperature lift of greater than 0.3 °C, close to the expected MLC adiabatic temperature change of 0.5 °C. The cooler is shown to work reliably over thousands of actuation cycles.

  20. 3He gas gap heat switch

    NASA Astrophysics Data System (ADS)

    Catarino, I.; Paine, C.

    2011-01-01

    Thermal control at 1 K is still demanding for heat switches development. A gas gap heat switch using 3He gas as the heat-transfer fluid was tested and characterized. The switch is actuated by a sorption pump, whose triggering temperatures were also characterized. Switching times were recorded for different thermalizations of the sorption pump. This paper presents the conductance results of such switch. The temperature scanning of the actuator is also presented. The effect of filling pressure is discussed as well as the thermalization of the sorption pump. About 60 μW/K OFF-state conductance and 100 mW/K ON-state conductance were obtained at 1.7 K. The actuation temperature is slightly adjustable upon the charging pressure of the working gas. Thermalization of the sorption pump at about 8-10 K is enough for producing an OFF state - it can be comfortably linked to a 4 K stage. Temperatures of 15-20 K at the sorption pump are required for reaching the viscous range for maximum ON conduction. Switching time dependence on the thermalization of the sorption pump is discarded.

  1. Integrated Heat Switch/Oxide Sorption Compressor

    NASA Technical Reports Server (NTRS)

    Bard, Steven

    1989-01-01

    Thermally-driven, nonmechanical compressor uses container filled with compressed praseodymium cerium oxide powder (PrCeOx) to provide high-pressure flow of oxygen gas for driving closed-cycle Joule-Thomson-expansion refrigeration unit. Integrated heat switch/oxide sorption compressor has no moving parts except check valves, which control flow of oxygen gas between compressor and closed-cycle Joule-Thomson refrigeration system. Oxygen expelled from sorbent at high pressure by evacuating heat-switch gap and turning on heater.

  2. Magnetoresistance effect of heat generation in a single-molecular spin-valve

    NASA Astrophysics Data System (ADS)

    Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

    2016-02-01

    Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily.

  3. Improved heat switch for gas sorption compressor

    NASA Technical Reports Server (NTRS)

    Chan, C. K.

    1985-01-01

    Thermal conductivities of the charcoal bed and the copper matrix for the gas adsorption compressor were measured by the concentric-cylinder method. The presence of the copper matrix in the charcoal bed enhanced the bed conductance by at least an order of magnitude. Thermal capacities of the adsorbent cell and the heat leaks to two compressor designs were measured by the transient method. The new gas adsorption compressor had a heat switch that could transfer eight times more heat than the previous one. The cycle time for the new prototype compressor is also improved by a factor of eight to within the minute range.

  4. Significant positive magnetoresistance of graphene/carbon composite films prepared by electrospraying and subsequent heat treatment

    NASA Astrophysics Data System (ADS)

    Chen, L. Q.; Liu, X.; Chen, J. T.; Zhang, Z. C.; Li, J. L.; Wang, L. J.; Jiang, W.

    2012-03-01

    Graphene/carbon composite films were prepared by electrospraying a graphene/polyacrylonitrile composite solution on SiO2-coated silicon substrates and subsequent heat treatment. The as-produced graphene/carbon composite films had a porous structure comprising graphene layers. With a magnetic field applied perpendicularly to the sample, an unexpectedly significant positive magnetoresistance attributed to e-e interaction and weak localization has been observed, which constantly increases with the magnetic field in the temperature range of 300-50 K from 0 to 80 kOe.

  5. Passive gas-gap heat switch for adiabatic demagnetization refrigerator

    NASA Technical Reports Server (NTRS)

    Shirron, Peter J. (Inventor); Di Pirro, Michael J. (Inventor)

    2005-01-01

    A passive gas-gap heat switch for use with a multi-stage continuous adiabatic demagnetization refrigerator (ADR). The passive gas-gap heat switch turns on automatically when the temperature of either side of the switch rises above a threshold value and turns off when the temperature on either side of the switch falls below this threshold value. One of the heat switches in this multistage process must be conductive in the 0.25? K to 0.3? K range. All of the heat switches must be capable of switching off in a short period of time (1-2 minutes), and when off to have a very low thermal conductance. This arrangement allows cyclic cooling cycles to be used without the need for separate heat switch controls.

  6. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  7. Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode

    NASA Astrophysics Data System (ADS)

    Moriyama, Takahiro; Gudmundsen, Theodore J.; Huang, Pinshane Y.; Liu, Luqiao; Muller, David A.; Ralph, Daniel C.; Buhrman, Robert A.

    2010-08-01

    We have fabricated MgO-barrier magnetic tunnel junctions with a Co/Ni switching layer to reduce the demagnetizing field via interface anisotropy. With a fcc-(111) oriented Co/Ni multilayer combined with an FeCoB insertion layer, the demagnetizing field is 2 kOe and the tunnel magnetoresistance can be as high as 106%. Room-temperature measurements of spin-torque switching are in good agreement with predictions for a reduced critical current associated with the small demagnetization for antiparallel-to-parallel switching. For parallel-to-antiparallel switching the small demagnetization field causes spatially nonuniform reversal nucleated at the sample ends, with a low energy barrier but a higher switching current.

  8. Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals

    PubMed Central

    Li, Haifeng; Xiao, Yinguo; Schmitz, Berthold; Persson, Jörg; Schmidt, Wolfgang; Meuffels, Paul; Roth, Georg; Brückel, Thomas

    2012-01-01

    Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to ~415%, accompanied by a large negative thermal volume expansion (NTVE). Around TN the PMRV translates to negative, down to ~−10.5%. Their theory-breaking magnetic-field dependencies [PMRV: dominantly linear; negative MR value (NMRV): quadratic] and the unusual NTVE indicate that PMRV is induced by the formation of magnetic polarons in 5d bands, whereas NMRV is possibly due to abated electron-spin scattering resulting from magnetic-field-aligned local 4f spins. Our results may open up a new avenue of searching for giant MR materials by suppressing the AFM transition temperature, opposite the case in manganites, and provide a promising approach to novel magnetic and electric devices. PMID:23087815

  9. Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals.

    PubMed

    Li, Haifeng; Xiao, Yinguo; Schmitz, Berthold; Persson, Jörg; Schmidt, Wolfgang; Meuffels, Paul; Roth, Georg; Brückel, Thomas

    2012-01-01

    Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to ~415%, accompanied by a large negative thermal volume expansion (NTVE). Around T(N) the PMRV translates to negative, down to ~-10.5%. Their theory-breaking magnetic-field dependencies [PMRV: dominantly linear; negative MR value (NMRV): quadratic] and the unusual NTVE indicate that PMRV is induced by the formation of magnetic polarons in 5d bands, whereas NMRV is possibly due to abated electron-spin scattering resulting from magnetic-field-aligned local 4f spins. Our results may open up a new avenue of searching for giant MR materials by suppressing the AFM transition temperature, opposite the case in manganites, and provide a promising approach to novel magnetic and electric devices. PMID:23087815

  10. Magnetoelectric assisted 180° magnetization switching for electric field addressable writing in magnetoresistive random-access memory.

    PubMed

    Wang, Zhiguang; Zhang, Yue; Wang, Yaojin; Li, Yanxi; Luo, Haosu; Li, Jiefang; Viehland, Dwight

    2014-08-26

    Magnetization-based memories, e.g., hard drive and magnetoresistive random-access memory (MRAM), use bistable magnetic domains in patterned nanomagnets for information recording. Electric field (E) tunable magnetic anisotropy can lower the energy barrier between two distinct magnetic states, promising reduced power consumption and increased recording density. However, integration of magnetoelectric heterostructure into MRAM is a highly challenging task owing to the particular architecture requirements of each component. Here, we show an epitaxial growth of self-assembled CoFe2O4 nanostripes with bistable in-plane magnetizations on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) substrates, where the magnetic switching can be triggered by E-induced elastic strain effect. An unprecedented magnetic coercive field change of up to 600 Oe was observed with increasing E. A near 180° magnetization rotation can be activated by E in the vicinity of the magnetic coercive field. These findings might help to solve the 1/2-selection problem in traditional MRAM by providing reduced magnetic coercive field in E field selected memory cells. PMID:25093903

  11. Calculation of energy-barrier lowering by incoherent switching in spin-transfer torque magnetoresistive random-access memory

    SciTech Connect

    Munira, Kamaram; Visscher, P. B.

    2015-05-07

    To make a useful spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use a Fokker-Planck equation to obtain a low-current thermally activated rate ∝exp(−E{sub eff}/k{sub B}T). Here, the effective energy barrier E{sub eff} scales with the single-macrospin energy barrier KV, where K is the effective anisotropy energy density and V the volume. A long-standing paradox in this field is that the actual energy barrier appears to be much smaller than this. It has been suggested that incoherent motions may lower the barrier, but this has proved difficult to quantify. In the present paper, we show that the coherent precession has a magnetostatic instability, which allows quantitative estimation of the energy barrier and may resolve the paradox.

  12. Bistable Magnetoresistance Switching in Exchange-Coupled CoFe2O4-Fe3O4 Binary Nanocrystal Superlattices by Self-Assembly and Thermal Annealing

    SciTech Connect

    Chen, J; Ye, XC; Oh, SJ; Kikkawa, JM; Kagan, CR; Murray, CB

    2013-02-01

    Self-assembly of multicomponent nanocrystal superlattices provides a modular approach to the design of metamaterials by choosing constituent nanocrystal building blocks with desired physical properties and engineering the interparticle coupling. In this work, we report the self-assembly of binary nanocrystal superlattices composed of magnetically hard CoFe2O4 nanocrystals and magnetically soft Fe3O4 nanocrystals. Both NaZn13- and MgZn2-type CoFe2O4-Fe3O4 binary nanocrystal superlattices have been formed by the liquid-air interfacial assembly approach. Exchange coupling is achieved in both types of binary superlattices after thermal annealing under vacuum at 400 degrees C. The exchange-coupled CoFe2O4-Fe3O4 binary nanocrystal superlattices show single-phase magnetization switching behavior and magnetoresistance switching behavior below 200 K. The NaZn13-type CoFe2O4-Fe3O4 binary nanocrystal superlattices annealed at 500 degrees C even exhibit bistable magnetoresistance switching behavior at room temperature constituting a simple nonvolatile memory function.

  13. Soft Switching SEPP High Frequency Inverter for Induction Heating

    NASA Astrophysics Data System (ADS)

    Ogiwara, Hiroyuki; Nakaoka, Mutsuo

    This paper presents a novel circuit topology to attain soft switching operation of a high frequency inverter. Its output power is regulated over a wide range using a PWM control technique by connecting an auxiliary resonant circuit to the conventional single ended push pull (SEPP) high frequency inverter for induction heating. All switching devices in the proposed inverter are operated soft switching mode. This paper describes its circuit constitution and obtained experimental results from a practical point of view.

  14. Electro-mechanical heat switch for cryogenic applications

    DOEpatents

    van den Berg, Marcel L.; Batteux, Jan D.; Labov, Simon E.

    2003-01-01

    A heat switch includes two symmetric jaws. Each jaw is comprised of a link connected at a translatable joint to a flexible arm. Each arm rotates about a fixed pivot, and has an articulated end including a thermal contact pad connected to a heat sink. The links are joined together at a translatable main joint. To close the heat switch, a closing solenoid is actuated and forces the main joint to an over-center position. This movement rotates the arms about their pivots, respectively, forces each of them into a stressed configuration, and forces the thermal contact pads towards each other and into compressive contact with a cold finger. The closing solenoid is then deactivated. The heat switch remains closed due to a restoring force generated by the stressed configuration of each arm, until actuation of an opening solenoid returns the main joint to its starting open-switch position.

  15. Design and application of gas-gap heat switches

    NASA Technical Reports Server (NTRS)

    Chan, C. K.; Ross, R. G., Jr.

    1990-01-01

    Gas-gap heat switches can serve as an effective means of thermally disconnecting a standby cryocooler when the primary (operating) cooler is connected and vice versa. The final phase of the development and test of a cryogenic heat switch designed for loads ranging from 2 watts at 8 K, to 100 watts at 80 K are described. Achieved heat-switch on/off conductance ratio ranged from 11,000 at 8 K to 2200 at 80 K. A particularly challenging element of heat-switch design is achieving satisfactory operation when large temperatures differentials exist across the switch. A special series of tests and analyses was conducted and used in this Phase-2 activity to evaluate the developed switches for temperature differentials ranging up to 200 K. Problems encountered at the maximum levels are described and analyzed, and means of avoiding the problems in the future are presented. A comprehensive summary of the overall heat-switch design methodology is also presented with special emphasis on lessons learned over the course of the 4-year development effort.

  16. Note: Cryogenic heat switch with stepper motor actuator.

    PubMed

    Melcher, B S; Timbie, P T

    2015-12-01

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an "on state" thermal conductance of 5.04 mW/K and no conductance in the "off state." The switch is optimized for cycling an adiabatic demagnetization refrigerator. PMID:26724093

  17. Note: Cryogenic heat switch with stepper motor actuator

    SciTech Connect

    Melcher, B. S. Timbie, P. T.

    2015-12-15

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

  18. Note: Cryogenic heat switch with stepper motor actuator

    NASA Astrophysics Data System (ADS)

    Melcher, B. S.; Timbie, P. T.

    2015-12-01

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an "on state" thermal conductance of 5.04 mW/K and no conductance in the "off state." The switch is optimized for cycling an adiabatic demagnetization refrigerator.

  19. Self-actuating heat switches for redundant refrigeration systems

    NASA Technical Reports Server (NTRS)

    Chan, Chung K. (Inventor)

    1988-01-01

    A dual refrigeration system for cooling a sink device is described, which automatically thermally couples the cold refrigerator to the sink device while thermally isolating the warm refrigerator from the sink device. The system includes two gas gap heat switches that each thermally couples one of the refrigerators to the sink device, and a pair of sorption pumps that are coupled through tubes to the heat switches. When the first refrigerator is operated and therefore cold, the first pump which is thermally coupled to it is also cooled and adsorbs gas to withdraw it from the second heat switch, to thereby thermally isolate the sink device from the warm second refrigerator. With the second refrigerator being warm, the second pump is also warm and desorbs gas, so the gas lies in the first switch, to close that switch and therefore thermally couple the cold first refrigerator to the sink device. Thus, the heat switches are automatically switched according to the temperature of the corresponding refrigerator.

  20. A High Conductance Detachable Heat Switch for ADRs

    NASA Astrophysics Data System (ADS)

    Tai, C. Y.; Wong, Y.; Rodenbush, A. J.; Joshi, C. H.; Shirron, P. J.

    2004-06-01

    Adiabatic Demagnetization Refrigerators (ADRs) are being increasingly considered for instrumentation and detector cooling on space missions such as Constellation-X. A multistage ADR is presently under development to operate between 6 K and the detector temperature of 50 mK. Energen, Inc. has developed and demonstrated a high conductance detachable thermal link (the heat switch) for operation at sub-Kelvin temperatures using a high-force cryogenic magnetostrictive actuator. A more efficient detachable thermal link decreases the number of cooling stages, thereby reducing the weight, cost and complexity of the cooling system. This heat switch uses KelvinAll, a magnetostrictive material developed by Energen, as the active element. Unlike other magnetostrictive materials, KelvinAll operates over a broad temperature range. At cryogenic temperatures it delivers a long stroke allowing a large separation gap between the contacting surfaces when the switch is disengaged. This makes alignment and operation of the heat switch simple.

  1. Cryogenic flat-panel gas-gap heat switch

    NASA Astrophysics Data System (ADS)

    Vanapalli, S.; Keijzer, R.; Buitelaar, P.; ter Brake, H. J. M.

    2016-09-01

    A compact additive manufactured flat-panel gas-gap heat switch operating at cryogenic temperature is reported in this paper. A guarded-hot-plate apparatus has been developed to measure the thermal conductance of the heat switch with the heat sink temperature in the range of 100-180 K. The apparatus is cooled by a two-stage GM cooler and the temperature is controlled with a heater and a braided copper wire connection. A thermal guard is mounted on the hot side of the device to confine the heat flow axially through the sample. A gas handling system allows testing the device with different gas pressures in the heat switch. Experiments are performed at various heat sink temperatures, by varying gas pressure in the gas-gap and with helium, hydrogen and nitrogen gas. The measured off-conductance with a heat sink temperature of 115 K and the hot plate at 120 K is 0.134 W/K, the on-conductance with helium and hydrogen gases at the same temperatures is 4.80 W/K and 4.71 W/K, respectively. This results in an on/off conductance ratio of 37 ± 7 and 35 ± 6 for helium and hydrogen respectively. The experimental results matches fairly well with the predicted heat conductance at cryogenic temperatures.

  2. A Passive, Adaptive and Autonomous Gas Gap heat Switch

    NASA Astrophysics Data System (ADS)

    Vanapalli, Srinivas; Colijn, Bram; Vermeer, Cris; Holland, Harry; Tirolien, Thierry; ter Brake, H. J. M.

    We report on the development of a heat switch for autonomous temperature control of electronic components in a satellite. A heat switch can modulate when needed between roles of a good thermal conductor and a good thermal insulator. Electronic boxes on a satellite should be maintained within a typical optimum temperature range of 260 to 310 K. The heat sinking is usually by means of a radiator. When the operating temperature of the electronic box increases beyond 310 K, a good contact to the radiator is desired for maximum cooling. On the other hand, when the satellite is in a cold dormant state, the electronics box should be heated by the onboard batteries. In this state a weak thermal contact is desired between the electronic box and the heat sink. In the present study, we are developing a gas gap heat switch in which the sorber material is thermally anchored to the electronic box. A temperature change of the electronic box triggers the (de-)sorption of gas from the sorber material and subsequently the gas pressure in the gas gap. This paper describes the physical principles and the current status of this technology. This approach can be extended to cryogenic temperature range.

  3. Electric switch of magnetoresistance in the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film

    NASA Astrophysics Data System (ADS)

    Chen, Bo; Li, Yong-Chao; Pan, Dan-Feng; Zhou, Hao; Xu, Guo-Min; Wan, Jian-Guo

    2016-07-01

    In this work, the Pb(Zr0.2Ti0.8)O3/(La0.67Ca0.33)MnO3 heterostructure film is deposited on the Pt/Ti/SiO2/Si wafer. The dominant transport is the inelastic hopping conduction. Due to the interaction between ferroelectric domain and magnetic polaron, film still exhibits weak ferromagnetism above the Curie temperature. Under lower bias voltage, the non-zero sequential magnetoresistance occurs on the magnetic granular junction. As soon as bias voltage exceeds the coercive voltage, the ferroelectric domain is aligned, consequently the magnetoresistance tends to vanish. Such electric switch of magnetoresistance is potential for the electric-write magnetic-read storage device.

  4. Co/Nb/Co trilayers as efficient cryogenic spin valves and supercurrent switches: the relevance to the standard giant and tunnel magnetoresistance effects

    NASA Astrophysics Data System (ADS)

    Stamopoulos, D.; Aristomenopoulou, E.; Lagogiannis, A.

    2014-09-01

    Nowadays, Ferromagnetic/Superconducting/Ferromagnetic trilayers (FM/SC/FM TLs) are intensively studied. Here, based on (CoO-)Co/Nb/Co TLs of thin Nb interlayer (below 30 nm) we introduce two classes of low-T c SC-based cryogenic devices, depending on the thickness of the Co outer layers and the presence of a CoO underlayer. An extended range of Co thickness (from 10 to 80 nm) was investigated and an underlayer of CoO was selectively employed, practically aiming to control in-plane and out-of-plane magnetization processes through utilization of shape anisotropy and exchange bias. To this effect magnetic force microscopy, magnetization and magnetoresistance data are presented. Ancillary atomic force microscopy and Rutherford back scattering data are presented, as well. CoO-Co/Nb/Co TLs of the first class have thin Co outer layers (10-30 nm) and are further assisted by the presence of a CoO underlayer to behave as efficient spin valves (ΔR/Rnor = 1.5% and ΔR/Rmin = 2.4%) under the action of the FMs in-plane exchange fields; the effect is termed superconducting Spin-Valve Effect (sSVE). Co/Nb/Co TLs of the second class have thick Co outer layers (50-80 nm) and without the need of a CoO underlayer act as almost absolute supercurrent switches (ΔR/Rnor = 97.7% and ΔR/Rmin = 28000%) under the action of FMs out-of-plane stray fields; the effect is termed superconducting Magneto-Resistance Effect (sMRE). The properties of these (CoO-)Co/Nb/Co TLs resemble the behavior of standard FM/normal-metal/FM and FM/insulator/FM TLs that exhibit the effects giant (GMR) and tunnel (TMR) magnetoresistance, respectively. Aiming to utilize the FM/SC/FM TLs studied here into cryogenic applications we thoroughly surveyed their operational H-T phase diagram and discuss how can be used to realize binary (‘0’-‘1’) elemental devices for information management in both read heads and memory units. The underlying physical mechanisms responsible for the sSVE and sMRE observed in the two

  5. Two-jump magnetic switching in ultrathin Co(0 0 1) films probed by giant magnetoresistance measurements

    NASA Astrophysics Data System (ADS)

    Lew, W. S.; Li, S. P.; Bland, J. A. C.

    2006-12-01

    Ultrathin epitaxial FCC-Co films, which form part of a spin-valve structure, were found to undergo one- or two-jump magnetic switching, in GMR and MOKE measurements depending upon the field orientation. The transitions are mediated by the propagation of 180° or 90° domain walls. The Co two-jump spin switching in the spin-valve structure has contributed to the formation of three stable GMR states: parallel, antiparallel and a new intermediate state.

  6. Joule heating-induced coexisted spin Seebeck effect and spin Hall magnetoresistance in the platinum/Y{sub 3}Fe{sub 5}O{sub 12} structure

    SciTech Connect

    Wang, W. X.; Wang, S. H.; Zou, L. K.; Cai, J. W.; Sun, J. R. E-mail: sun-zg@whut.edu.cn; Sun, Z. G.

    2014-11-03

    Spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) are observed simultaneously in the Pt/Y{sub 3}Fe{sub 5}O{sub 12} hybrid structure when thermal gradient is produced by Joule heating. According to their dependences on applied current, these two effects can be separated. Their dependence on heating power and magnetic field is systematically studied. With the increase of heating power, the SSE enhances linearly, whereas the SMR decreases slowly. The origin of the spin currents is further analyzed. The heating power dependences of the spin currents associated with the SSE and the SMR are found to be different.

  7. Wax-actuated heat switch for Mars surface applications

    NASA Astrophysics Data System (ADS)

    Sunada, Eric; Lankford, Kurt; Pauken, Mike; Novak, Keith S.; Birur, Gajanana

    2002-01-01

    Missions to the surface of Mars pose unique thermal control challenges to rover and lander systems. With diurnal temperature changes greater than 100 °C, the presence of a Mars atmosphere, and limited power for night time heating the thermal control engineer is faced with a fundamental problem: how to successfully keep components above their survival or operating temperatures at night while managing higher environmental temperatures and dissipation rates during the day. Payload and avionics elements, among others, must be well insulated to survive night conditions at the risk of overheating during the day. This problem will be magnified in future missions as higher demand on electrical components will result in increased dissipations. One solution is a heat switch that changes thermal conductance to reject excess heat during the day and conserve heat during the night. .

  8. Design and Test of Passively Operated Heat Switches for 0.2 to 15 K

    NASA Technical Reports Server (NTRS)

    DiPirro, M. J.; Shirron, P. J.; Canavan, E. R.; Francis, J. J.; Tuttle, J. G.

    2003-01-01

    Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.

  9. Magnetization reversal in individual Py and CoFeB nanotubes locally probed via anisotropic magnetoresistance and anomalous Nernst effect

    NASA Astrophysics Data System (ADS)

    Baumgaertl, K.; Heimbach, F.; Maendl, S.; Rueffer, D.; Fontcuberta i Morral, A.; Grundler, D.

    2016-03-01

    Using anisotropic magnetoresistance in a multi-probe configuration and local heating with a scanning laser, we investigate the magnetization reversal of individual permalloy (Py) and CoFeB nanotubes with spatial resolution. Nanocrystalline Py and amorphous CoFeB nanotubes are found to reverse via domain wall movement and chirality switching, respectively. Our experiments provide an understanding of the role of microstructure and magnetic anisotropy in the switching of ferromagnetic nanotubes at room temperature.

  10. Fabrication and local laser heating of freestanding Ni{sub 80}Fe{sub 20} bridges with Pt contacts displaying anisotropic magnetoresistance and anomalous Nernst effect

    SciTech Connect

    Brandl, F.; Grundler, D.

    2014-04-28

    In spin caloritronics, ferromagnetic samples subject to relatively large in-plane temperature gradients ∇T have turned out to be extremely interesting. We report on a preparation technique that allows us to create freely suspended permalloy/Pt hybrid structures where a scanning laser induces ∇T on the order of a few K/μm. We observe both the anisotropic magnetoresistance at room temperature and the magnetic field dependent anomalous Nernst effect under laser heating. The technique is promising for the realization of device concepts considered in spin caloritronics based on suspended ferromagnetic nanostructures with electrical contacts.

  11. Quick-Response Thermal Actuator for Use as a Heat Switch

    NASA Technical Reports Server (NTRS)

    Cepeda-Rizo, Juan

    2010-01-01

    This work improves the performance of a heat switch, or a thermal actuator, by delivering heat to the actuator in a more efficient manner. The method uses a heat pipe as the plunger or plug instead of just using a solid piece of metal. The heat pipe could be one tailored for fast transient thermal response.

  12. Quantum magnetoresistance

    SciTech Connect

    Abrikosov, A.A.

    1998-08-01

    An explanation is proposed of the unusual magnetoresistance, linear in magnetic field and positive, observed recently in nonstoichiometric silver chalcogenides. The idea is based on the assumption that these substances are basically gapless semiconductors with a linear energy spectrum. Most of the excess silver atoms form metallic clusters which are doping the remaining material to a very small carrier concentration, so that even in a magnetic field as low as 10 Oe, only one Landau band participates in the conductivity. {copyright} {ital 1998} {ital The American Physical Society}

  13. Development of Superconducting Magnetic Heat Switches for an Ideal Integrating Bolometer

    NASA Astrophysics Data System (ADS)

    Nagler, P. C.; Canavan, E.; De Alba, R.; Stevenson, T. R.

    2016-07-01

    We are developing an ideal integrating bolometer (IIB), a novel detector for far-infrared applications. An IIB consists of a dissipationless temperature sensor weakly coupled to a thermal bath through a heat switch. If the heat switch's thermal conductance in the "off" state is much smaller than its conductance in the "on" state, the thermometer temperature will depend linearly on integrated incident power, until the bolometer temperature is reset by changing the conductance to the "on" state. A key component of an IIB is the heat switch, the subject of this paper. We have fabricated and tested prototype IIB devices designed to demonstrate a superconducting magnetic heat switch on both solid substrates and membranes. In this work, we will present details on the design, fabrication, and experimental performance of our prototype IIB devices.

  14. Assessment of Zr-Fe-V getter alloy for gas-gap heat switches

    NASA Technical Reports Server (NTRS)

    Prina, M.; Kulleck, J. G.; Bowman, R. C., Jr.

    2000-01-01

    A commercial Zr-V-Fe alloy (i.e., SAES Getters trade name alloy St-172) has been assessed as reversible hydrogen storage material for use in actuators of gas gap heat switches. Two prototype actuators containing the SAES St-172 material were built and operated for several thousand cycles to evaluate performance of the metal hydride system under conditions simulating heat switch operation.

  15. MW-scale ICRF plasma heating using IGBT switches in a multi-pulse scheme

    NASA Astrophysics Data System (ADS)

    Be'ery, I.; Kogan, K.; Seemann, O.

    2015-06-01

    Solid-state silicon switches are cheap and reliable option for 1-10 MHz RF power sources, required for plasma ion cyclotron RF heating (ICRF). The large `on' resistance of MOSFET and similar devices limits their power delivery to a few tens of kW per switch. Low resistivity devices, such as IGBT, suffer from large `off' switching time, which limits their useful frequency range and increases the power dissipated in the switch. Here we demonstrate more than 0.8 MW circulated RF power at 2 MHz using only three high voltage IGBT switches. The circuit uses the fast `on' switching capability of the IGBTs to generate high-Q pulse train. This operation mode also simplifies the measurement of RF coupling between the antenna and the plasma.

  16. Compact flat-panel gas-gap heat switch operating at 295 K

    NASA Astrophysics Data System (ADS)

    Krielaart, M. A. R.; Vermeer, C. H.; Vanapalli, S.

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K.

  17. Compact flat-panel gas-gap heat switch operating at 295 K.

    PubMed

    Krielaart, M A R; Vermeer, C H; Vanapalli, S

    2015-11-01

    Heat switches are devices that can change from a thermally conducting (on-) state to an insulating (off-) state whenever the need arises. They enable adaptive thermal management strategies in which cooling rates are altered either spatially or temporally, leading to a substantial reduction in the energy and mass budget of a large range of systems. State-of-the-art heat switches are only rarely employed in thermal system architectures, since they are rather bulky and have a limited thermal performance (expressed as the heat transfer ratio between the on- and off-state heat conductance). Using selective laser melting additive manufacturing technology, also known as 3D printing, we developed a compact flat-panel gas-gap heat switch that offers superior thermal performance, is simpler and more economic to produce and assemble, contains no moving parts, and is more reliable because it lacks welded joints. The manufactured rectangular panel heat switch has frontal device dimensions of 10 cm by 10 cm, thickness of 3.2 mm and weighs just 121 g. An off heat conductance of 0.2 W/K and on-off heat conductance ratio of 38 is observed at 295 K. PMID:26628181

  18. Low-power, fast-response active gas-gap heat switches for low temperature applications

    NASA Astrophysics Data System (ADS)

    Kimball, Mark O.; Shirron, Peter J.; James, Bryan L.; Muench, Theodore T.; Sampson, Michael A.; Letmate, Richard V.

    2015-12-01

    Heat switches are critical to many low temperature applications, where control of heat flow and selective thermal isolation are required. Their designs tend to be driven by the need for the lowest possible off-state conductance, while meeting requirements for on-state conduction. As a result, heat switches tend to be designed as close as possible to the limits of material strength and machinability, using materials that have the lowest thermal conductivity to strength ratio. In addition, switching speed is important for many applications, and many designs and switch types require a compromise between the power used for actuation and on/off transition times. We present a design for an active gas-gap heat switch, developed for the Soft X-ray Spectrometer instrument on the Japanese Astro-H mission, that requires less than 0.5 mW of power to operate, has on/off transition times of < 1 minute, and that achieves a conductance of > 50 mW/K at 1 K with a heat leak of < 0.5 μW from 1 K to very low temperature. Details of the design and performance will be presented.

  19. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in Polycrystalline Co2FeAl Full-Heusler-Alloy Magnetic Tunnel Junctions on Amorphous Si /SiO2 Substrates

    NASA Astrophysics Data System (ADS)

    Wen, Zhenchao; Sukegawa, Hiroaki; Kasai, Shinya; Inomata, Koichiro; Mitani, Seiji

    2014-08-01

    We study polycrystalline B2-type Co2FeAl (CFA) full-Heusler-alloy-based magnetic tunnel junctions (MTJs) fabricated on a Si /SiO2 amorphous substrate. Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and a flat surface are achieved by using a MgO buffer layer. A tunnel magnetoresistance ratio up to 175% is obtained for a MTJ with a CFA /MgO/CoFe structure on a 7.5-nm-thick MgO buffer. Spin-transfer-torque-induced magnetization switching is achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as a switching layer. By using a thermal activation model, the intrinsic critical current density (Jc0) is determined to be 8.2×106 A /cm2, which is lower than 2.9×107 A /cm2, the value for epitaxial CFA MTJs [Appl. Phys. Lett. 100, 182403 (2012), 10.1063/1.4710521]. We find that the Gilbert damping constant (α) evaluated by using ferromagnetic resonance measurements for the polycrystalline CFA film is approximately 0.015 and is almost independent of the CFA thickness (2-18 nm). The low Jc0 for the polycrystalline MTJ is mainly attributed to the low α of the CFA layer compared with the value in the epitaxial one (approximately 0.04).

  20. Giant Coulomb blockade magnetoresistance

    SciTech Connect

    Zhang, Xiaoguang; Wen, Z. C.; Wei, H. X.; Han, Prof. X. F.

    2010-01-01

    We show that the Coulomb blockade voltage can be made to depend strongly on the electron spin in a thin magnetic granular layer inserted in the middle of an insulating layer of a tunnel junction. This strong spin dependence is predicted from the spin-dependent inter-granular conductance through any of the following effects within the granular layer, giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), colossal magnetoresistance (CMR), or GMR through a polymer spacer. The resulting Coulomb blockade magnetoresistance (CBMR) ratio can exceed the magnetoresistance ratio of the granular layer itself by orders of magnitude. Unlike other magenetoresistance effects, the CBMR effect does not require magnetic electrodes.

  1. Methane cryogenic heat pipe for space use with a liquid trap for on-off switching

    NASA Astrophysics Data System (ADS)

    Cepeda-Rizo, Juan; Rodriguez, Jose Israel; Bugby, David

    2012-06-01

    A methane cryogenic heat pipe with a liquid trap for on-off actuation was developed by ATK for use on Jet Propulsion Laboratory's Space Interferometer Mission Lite (SIM Lite) pre-Phase A hardware technology demonstration tests. The cryogenic heat pipe coupled to a cold radiator at 160K provides cooling to the Charged Coupled Device camera focal planes. The heat pipe was designed for a transport capacity of 15 W across a 1.5 m span through a near room-temperature spacecraft environment. A key and driving requirement for the heat pipe was the need for switching the heat pipe on and off needed to support low power decontamination cycles to near room temperature of the cryogenic focal planes. The cryogenic heat pipe is turned off by removing the methane working fluid from the heat pipe and storing in the liquid trap. The heat pipe is turned-on by simply reintroducing the working fluid from the liquid trap. This on-off switching capability is a key requirement for cryogenic heat pipes used with passive or active cryocoolers for cooling focal planes or optics. This switching capability provides a means to decouple a cold focal plane or optics from a redundant stand-by cryocooler or a passive cooler when in need for a decontamination cycle.

  2. Passive Gas-Gap Heat Switches for Use in Adiabatic Demagnetization Refrigerators

    NASA Technical Reports Server (NTRS)

    Shirron, P. J.; Canavan, E. R.; DiPirro, M. J.; Jackson, M.; Panek, J.; Tuttle, J. G.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    We have designed, built, and tested a gas gap heat switch that works passively, without the need for a separate, thermally activated getter. This switch uses He-3 condensed as a thin film on alternating plates of copper. The switch is thermally conductive at temperatures above about 0.2 K, and is insulating if either end of the switch is below about 0.15 K. The "on" conductance (7 mW/K at 0.25K) is limited by the surface area and gap between the copper leaves, the saturated vapor pressure of the He-3, and the Kapitza boundary resistance between the He-3 and the copper. The "off" conductance is determined by the helium containment shell which physically supports the two conductive ends. We have also designed and are building passive gas gap heat switches which will passively turn off near 1 K and 4 K. For these switches we rely on the rapidly changing vapor pressure of He-4 above neon or copper substrates, respectively, when the coverage is less than one monolayer. The different binding energies of the He-4 to the neon or copper give rise to the different temperatures where the switches transition between the on and off states.

  3. Comparison of specific heat and magneto-resistance measurements in the same SmFeAsO1-xFx crystals

    NASA Astrophysics Data System (ADS)

    Galeski, Stanislaw; Moll, Philip; Zhigadlo, Nikolai; Karpinski, Janusz; Batlogg, Bertram; Physics of New Materials Team

    2014-03-01

    We have performed resistivity and specific heat measurements in the same sub-microgram single crystals of an iron-based superconductor SmFeAsO1-xFx (Tc ~ 50K). This allowed for the first direct comparison of Hc2 curves from thermodynamic measurements with estimates from the magneto-resistance at commonly used criteria (10, 50, 90% ϱN) . A criterion of 40-50% ϱN well describes Hc2(T) for both in and out of plane fields. We attribute the low field dependence of the criterion to filamentary superconductivity. The challenging heat capacity measurement on microscopic crystals (50 μm in diameter, 10 μm thick) was done using a commercially available gas-nanocalorimeter. The thermodynamic data was in good agreement with previous experiments performed on crystals from the same batch by other groups. Hc2 slopes of 1.6 T/K for fields parallel to the c-axis and 12.3 T/K in the ab-plane were found yielding a ξ anisotropy γ ~ 7. This demonstrates that our experimental technique is both relatively fast to set up and furthermore reliable in fields up to 6T.

  4. Building a Thinner Gap in a Gas-Gap Heat Switch

    NASA Astrophysics Data System (ADS)

    Franco, J.; Galinhas, B.; Sousa, P. Borges de; Martins, D.; Catarino, I.; Bonfait, G.

    A gas-gap heat switch (GGHS) reaches its highest conductance state when the gap between two exchange surfaces is filled with a conducting gas in a viscous regime. The broader the surface and the thinner the gap, the higher the ON conductance achieved. In this paper we describe a very thin cold gas-gap heat switchreached upon the use of the differential thermal expansion of the construction materials. Such technique overcomes the intricacies of the manufacturing process of the switch. We designed built and tested a prototype of a very thin gap heat switch using our new methodology. The high conductance was measured with both helium and nitrogen, at temperatures ranging from 20 K (He) or 75 K (N2) up to room temperature. The inferred gap opening at low temperature (≈ 17 μm) has shown to be slightly above the expected, which allowed us to reinterpret the design calculations. The switch was also characterized along its extreme conductance states while using a sorption pump, and its performance was compared with a previously developed model. Lessons learned from the first prototype led us to build a second one with better performance. Our experiments suggest that the proposed design allows for the development of a customized cryogenic switch with improved ON conductance while keeping the assembly very simple and sturdy, hence widening the scope of applicability of these devices.

  5. Modeling of heat transfer effects in ferroelectric domain switching

    NASA Astrophysics Data System (ADS)

    Kim, Sang J.

    1999-06-01

    In this paper we study on the effects of heat generated from a moving domain boundary during polarization reversals in ferroelectrics. According to the one-dimensional model of ferroelectrics proposed by Kim (1999), there are two heat sources associated with a moving domain boundary: one is from dissipation mechanism on the domain boundary and the other from the entropy difference between two variants across the domain boundary. In order to investigate the effects of heat generation and transfer during polarization reversals we utilize the finite difference algorithm shown in Kim and Abeyaratne (1995). The results of calculation show that it is possible for the specimen temperature to reach as high temperatures as observed in experiments.

  6. High speed magneto-resistive random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1992-01-01

    A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.

  7. Operation of an ADR using helium exchange gas as a substitute for a failed heat switch

    NASA Astrophysics Data System (ADS)

    Shirron, P.; DiPirro, M.; Kimball, M.; Sneiderman, G.; Porter, F. S.; Kilbourne, C.; Kelley, R.; Fujimoto, R.; Yoshida, S.; Takei, Y.; Mitsuda, K.

    2014-11-01

    The Soft X-ray Spectrometer (SXS) is one of four instruments on the Japanese Astro-H mission, which is currently planned for launch in late 2015. The SXS will perform imaging spectroscopy in the soft X-ray band (0.3-12 keV) using a 6 × 6 pixel array of microcalorimeters cooled to 50 mK. The detectors are cooled by a 3-stage adiabatic demagnetization refrigerator (ADR) that rejects heat to either a superfluid helium tank (at 1.2 K) or to a 4.5 K Joule-Thomson (JT) cryocooler. Four gas-gap heat switches are used in the assembly to manage heat flow between the ADR stages and the heat sinks. The engineering model (EM) ADR was assembled and performance tested at NASA/GSFC in November 2011, and subsequently installed in the EM dewar at Sumitomo Heavy Industries, Japan. During the first cooldown in July 2012, a failure of the heat switch that linked the two colder stages of the ADR to the helium tank was observed. Operation of the ADR requires some mechanism for thermally linking the salt pills to the heat sink, and then thermally isolating them. With the failed heat switch unable to perform this function, an alternate plan was devised which used carefully controlled amounts of exchange gas in the dewar's guard vacuum to facilitate heat exchange. The process was successfully demonstrated in November 2012, allowing the ADR to cool the detectors to 50 mK for hold times in excess of 10 h. This paper describes the exchange-gas-assisted recycling process, and the strategies used to avoid helium contamination of the detectors at low temperature.

  8. Operation of an ADR Using Helium Exchange Gas as a Substitute for a Failed Heat Switch

    NASA Technical Reports Server (NTRS)

    Shirron, P.; DiPirro, M.; Kimball, M.; Sneiderman, G.; Porter, F. S.; Kilbourne, C.; Kelley, R.; Fujimoto, R.; Yoshida, S.; Takei, Y.; Mitsuda, K.

    2014-01-01

    The Soft X-ray Spectrometer (SXS) is one of four instruments on the Japanese Astro-H mission, which is currently planned for launch in late 2015. The SXS will perform imaging spectroscopy in the soft X-ray band (0.3-12 keV) using a 6 6 pixel array of microcalorimeters cooled to 50 mK. The detectors are cooled by a 3-stage adiabatic demagnetization refrigerator (ADR) that rejects heat to either a superfluid helium tank (at 1.2 K) or to a 4.5 K Joule-Thomson (JT) cryocooler. Four gas-gap heat switches are used in the assembly to manage heat flow between the ADR stages and the heat sinks. The engineering model (EM) ADR was assembled and performance tested at NASA/GSFC in November 2011, and subsequently installed in the EM dewar at Sumitomo Heavy Industries, Japan. During the first cooldown in July 2012, a failure of the heat switch that linked the two colder stages of the ADR to the helium tank was observed. Operation of the ADR requires some mechanism for thermally linking the salt pills to the heat sink, and then thermally isolating them. With the failed heat switch unable to perform this function, an alternate plan was devised which used carefully controlled amounts of exchange gas in the dewar's guard vacuum to facilitate heat exchange. The process was successfully demonstrated in November 2012, allowing the ADR to cool the detectors to 50 mK for hold times in excess of 10 h. This paper describes the exchange-gas-assisted recycling process, and the strategies used to avoid helium contamination of the detectors at low temperature.

  9. Heating power lowering by downscaling the cell dimensions in nanoscale filamentary resistive switching devices

    NASA Astrophysics Data System (ADS)

    Yin, Qiaonan; Chen, Yan; Xia, Yidong; Xu, Bo; Yin, Jiang; Liu, Zhiguo

    2016-04-01

    In this work, we theoretically investigate the size dependence of the heat process in thermochemical filamentary resistive switching memories of crossbar structure. The equivalent heat resistance of the system increases with the device dimensions scaled down because of the size-dependent electric and thermal conductivity and geometry configurations. The higher equivalent heat resistance by diminishing the cell sizes induces an enhanced self-heating effect of the filament. It promises lower operation voltage and heating power to trigger the thermally activated dissolution of the filament in RESET process. These results strengthen the advantage of filamentary memories in lateral and longitudinal scaling down technologies where less power consumption has long been urged. Our results also show the opposite dependence of the driven electric field on the linewidth and thickness of the device.

  10. Design and development of a shape memory alloy activated heat pipe-based thermal switch

    NASA Astrophysics Data System (ADS)

    Benafan, O.; Notardonato, W. U.; Meneghelli, B. J.; Vaidyanathan, R.

    2013-10-01

    This work reports on the design, fabrication and testing of a thermal switch wherein the open and closed states were actuated by shape memory alloy (SMA) elements while heat was transferred by a two-phase heat pipe. The motivation for such a switch comes from NASA’s need for thermal management in advanced spaceport applications associated with future lunar and Mars missions. As the temperature can approximately vary between -233 and 127 ° C during lunar day/night cycles, the switch was designed to reject heat from a cryogen tank into space during the night cycle while providing thermal isolation during the day cycle. A Ni47.1Ti49.6Fe3.3 (at.%) alloy that exhibited a reversible phase transformation between a trigonal R-phase and a cubic austenite phase was used as the sensing and actuating elements. Thermomechanical actuation, accomplished through an antagonistic spring system, resulted in strokes up to 7 mm against bias forces of up to 45 N. The actuation system was tested for more than thirty cycles, equivalent to one year of operation. The thermal performance, accomplished via a variable length, closed two-phase heat pipe, was evaluated, resulting in heat transfer rates of 13 W using pentane and 10 W using R-134a as working fluids. Experimental data were also compared to theoretical predictions where possible. Direct comparisons between different design approaches of SMA helical actuators, highlighting the effects of the helix angle, were carried out to give a layout of more accurate design methodologies.

  11. A (He-3)-gap heat switch for use below 2 K in zero g

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Helvensteijn, Ben P. M.

    1992-01-01

    We have designed and tested a compact heat switch that has a simple design and a very large ON/OFF ratio. The design uses concentric cylinders of copper that can be fabricated with higher precision and with thinner web thickness than other designs. It is assembled with a technique that carefully controls the narrow gap between adjacent segments. These features allow a very large surface area for conduction to be fitted into a small volume. The conduction medium is liquid or gaseous He-3, which is put into or taken out of the switch by a small nearby charcoal pump in order to avoid an external mechanical pump and a long pump line. Measurements of its performance down to 1 K show an ON/OFF conduction ratio of about 4000.

  12. A He-3-gap heat switch for use below 2 K in zero G

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Helvensteijn, Ben P. M.

    1991-01-01

    We have designed and tested a compact heat switch that has a simple design and a very large ON/OFF ratio. The design uses concentric cylinders of copper that can be fabricated with higher precision and with thinner web thickness than other designs. It is assembled with a technique that carefully controls the narrow gap between adjacent segments. These features allow a very large surface area for conduction to be fitted into a small volume. The conduction medium is liquid or gaseous He-3 which is put into or taken out of the switch by a small nearby charcoal pump in order to avoid an external mechanical pump and a long pump line. Measurements of its performance down to 1 K show an ON/OFF conduction ratio of about 4000.

  13. Magnetization reversal in permalloy ferromagnetic nanowires investigated with magnetoresistance measurements

    NASA Astrophysics Data System (ADS)

    Oliveira, A. B.; Rezende, S. M.; Azevedo, A.

    2008-07-01

    The magnetization reversal process in single Permalloy (Ni81Fe19) nanowires has been investigated by magnetoresistance measurements as a function of the angle between the applied field and the wire direction. The Permalloy nanostructures fabricated on an ultrathin film by atomic force microscopy consist of two large rectangular pads connected by a nanowire with the shape of a long thin narrow tape. For each field direction in the plane of the film the dependence of the magnetoresistance on the field value exhibits two main contributions: one from the pads and one from the nanowire. The contribution from the pads is due to a usual anisotropic magnetoresistance characteristic of coherent magnetization rotation, whereas the contribution from the nanowire is an abrupt transition at the switching field. The dependence of the switching field on the in-plane field angle is quantitatively described by a model of nucleation field with the buckling magnetization rotation mode.

  14. Magnetoresistive system with concentric ferromagnetic asymmetric nanorings

    SciTech Connect

    Avila, J. I. Tumelero, M. A.; Pasa, A. A.; Viegas, A. D. C.

    2015-03-14

    A structure consisting of two concentric asymmetric nanorings, each displaying vortex remanent states, is studied with micromagnetic calculations. By orienting in suitable directions, both the asymmetry of the rings and a uniform magnetic field, the vortices chiralities can be switched from parallel to antiparallel, obtaining in this way the analogue of the ferromagnetic and antiferromagnetic configurations found in bar magnets pairs. Conditions on the thickness of single rings to obtain vortex states, as well as formulas for their remanent magnetization are given. The concentric ring structure enables the creation of magnetoresistive systems comprising the qualities of magnetic nanorings, such as low stray fields and high stability. A possible application is as contacts in spin injection in semiconductors, and estimations obtained here of magnetoresistance change for a cylindrical spin injection based device show significant variations comparable to linear geometries.

  15. Influence of local anisotropic magnetoresistance on the total magnetoresistance of mesoscopic NiFe rings

    NASA Astrophysics Data System (ADS)

    Buntinx, Dieter; Volodin, Alexander; van Haesendonck, Chris

    2004-12-01

    The magnetoresistance of mesoscopic NiFe rings is studied by low temperature magnetotransport measurements and numerical simulations. In order not to disturb the magnetic states in the electrical transport measurements, nonmagnetic gold wires are attached to individual rings. The simulations compute the change in resistance that is caused by the anisotropic magnetoresistance (AMR) effect and are based on a combination of magnetostatics for the magnetic domain configuration and electrostatics for the current distribution. Measurements as well as simulations reveal the presence of two stable “onion” states at remanence and a stable “vortex” state near the switching fields. Moreover, a quantitative comparison between experiment and simulation is possible without the use of any free fitting parameters. Apart from the AMR effect, no additional domain wall resistance has to be introduced for the onion state. In the switching region, experiment and simulation reveal the presence of a “stressed vortex” configuration which plays a key role in the quantitative description of the magnetoresistance. The switching behavior of the NiFe rings can be modified by introducing a wedge shaped notch at the expected position of one of the domain walls in the onion state of the rings.

  16. Heat switch effect in an antiferromagnetic insulator Co3V2O8

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Wu, J. C.; Zhao, Z. Y.; He, Z. Z.; Song, J. D.; Zhao, J. Y.; Liu, X. G.; Sun, X. F.; Li, X. G.

    2016-06-01

    We report a heat switch effect in single crystals of an antiferromagnet Co3V2O8, that is, the thermal conductivity (κ) can be changed with magnetic field in an extremely large scale. Due to successive magnetic phase transitions at 12-6 K, the zero-field κ(T ) displays a deep minimum at 6.7 K and rather small magnitude at low temperatures. Both the temperature and field dependencies of κ demonstrate that the phonons are strongly scattered at the regime of magnetic phase transitions. Magnetic field can suppress magnetic scattering effect and significantly recover the phonon thermal conductivity. In particular, a 14 T field along the a axis increases the κ at 7.5 K up to 100 times. For H ∥c , the magnitude of κ can be suppressed down to ˜8% at some field-induced transition and can be enhanced up to 20 times at 14 T. The present results demonstrate that it is possible to design a kind of heat switch in the family of magnetic materials.

  17. Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

    SciTech Connect

    Young, Robert M. El-Hinnawy, Nabil; Borodulin, Pavel; Wagner, Brian P.; King, Matthew R.; Jones, Evan B.; Howell, Robert S.; Lee, Michael J.

    2014-08-07

    We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W.

  18. Use of Hydroxyapatite Doping to Enhance Responsiveness of Heat-Inducible Gene Switches to Focused Ultrasound.

    PubMed

    Fabiilli, Mario L; Phanse, Rahul A; Moncion, Alexander; Fowlkes, J Brian; Franceschi, Renny T

    2016-03-01

    Recently, we demonstrated that ultrasound-based hyperthermia can activate cells containing a heat-activated and ligand-inducible gene switch in a spatio-temporally controlled manner. These engineered cells can be incorporated into hydrogel scaffolds (e.g., fibrin) for in vivo implantation, where ultrasound can be used to non-invasively pattern transgene expression. Due to their high water content, the acoustic attenuation of fibrin scaffolds is low. Thus, long ultrasound exposures and high acoustic intensities are needed to generate sufficient hyperthermia for gene activation. Here, we demonstrate that the attenuation of fibrin scaffolds and the resulting hyperthermia achievable with ultrasound can be increased significantly by doping the fibrin with hydroxyapatite (HA) nanopowder. The attenuation of a 1% (w/v) fibrin scaffold with 5% (w/v) HA was similar to soft tissue. Transgene activation of cells harboring the gene switch occurred at lower acoustic intensities and shorter exposures when the cells were encapsulated in HA-doped fibrin scaffolds versus undoped scaffolds. Inclusion of HA in the fibrin scaffold did not affect the viability of the encapsulated cells. PMID:26712417

  19. Magnetoresistance of Au films

    SciTech Connect

    Zhang, D. L.; Song, X. H.; Zhang, X; Zhang, Xiaoguang

    2014-01-01

    Measurement of the magnetoresistance (MR) of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler s rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms.

  20. Giant magnetoresistive sensor

    DOEpatents

    Stearns, Daniel G.; Vernon, Stephen P.; Ceglio, Natale M.; Hawryluk, Andrew M.

    1999-01-01

    A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.

  1. Magnetoresistance of Au films

    DOE PAGESBeta

    Zhang, D. L.; Song, X. H.; Zhang, X.; Zhang, Xiaoguang

    2014-12-10

    Measurement of the magnetoresistance (MR) of Au films as a function of temperature and film thickness reveals a strong dependence on grain size distribution and clear violation of the Kohler s rule. Using a model of random resistor network, we show that this result can be explained if the MR arises entirely from inhomogeneity due to grain boundary scattering and thermal activation of grain boundary atoms.

  2. Magnetoresistive Emulsion Analyzer

    PubMed Central

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G.

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening. PMID:23989504

  3. Magnetoresistive emulsion analyzer.

    PubMed

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and nanomedicine including drug design and screening. PMID:23989504

  4. Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

    SciTech Connect

    Kinjo, Hidekazu Machida, Kenji; Aoshima, Ken-ichi; Kato, Daisuke; Kuga, Kiyoshi; Kikuchi, Hiroshi; Shimidzu, Naoki; Matsui, Koichi

    2014-05-28

    Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

  5. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    PubMed

    Stamopoulos, D; Aristomenopoulou, E

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

  6. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    NASA Astrophysics Data System (ADS)

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-08-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  7. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    PubMed Central

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

  8. Scanning tunneling microscopy for laterally resolved measurements of magnetoresistance through a point contact

    NASA Astrophysics Data System (ADS)

    Wahlström, Erik; Bručas, Rimantas; Hanson, Maj

    2006-03-01

    Using a scanning tunneling microscope for point contact measurements, we obtained laterally resolved information of the magnetoresistive properties of nanostructured spin-valve elements. A good correlation is found between magnetization and magnetoresistance curves of single-domain elliptical elements (450nm by 150nm), for magnetic fields applied along their long and short axes. In ring-shaped elements (inner and outer diameters 1.8 and 2.2μm), different magnetoresistance curves are acquired as different points around the ring are probed. The observed switching can be related to the onion state of the rings, and it clearly demonstrates a lateral resolution ⩽100nm.

  9. Gas gap heat switch for a cryogen-free magnet system

    NASA Astrophysics Data System (ADS)

    Barreto, J.; Borges de Sousa, P.; Martins, D.; Kar, S.; Bonfait, G.; Catarino, I.

    2015-12-01

    Cryogen-free superconducting magnet systems (CFMS) have become popular over the last two decades for the simple reason that the use of liquid helium is rather cumbersome and that helium is a scarce resource. Some available CFMS use a mechanical cryocooler as the magnet's cold source. However, the variable temperature insert (VTI) for some existing CFMS are not strictly cryogen-free as they are still based on helium gas circulation through the sample space. We designed a prototype of a gas gap heat switch (GGHS) that allows a thermal management of a completely cryogen-free magnet system, with no helium losses. The idea relies on a parallel cooling path to a variable temperature insert (VTI) of a magnetic properties measurement system under development at Inter-University Accelerator Centre. A Gifford-McMahon cryocooler (1.5 W @ 4.2 K) would serve primarily as the cold source of the superconducting magnet, dedicating 1 W to this cooling, under quite conservative safety factors. The remaining cooling power (0.5 W) is to be diverted towards a VTI through a controlled GGHS that was designed and built with a 80 μm gap width. The built GGHS thermal performance was measured at 4 K, using helium as the exchange gas, and its conductance is compared both with a previously developed analytical model and a finite element method. Lessons learned lead to a new and more functional prototype yet to be reported.

  10. Prediction and measurement of heat transfer in a switched reluctance generator

    NASA Astrophysics Data System (ADS)

    Himes, Marvin Eugene, Jr.

    This research is an experimental investigation of the convective film coefficients on the unique pole faces of a high speed rotor operating within a generator. The specific geometry studied is that of a switched reluctance generator under development by the United States Air Force for use on jet aircraft as an integrated power unit (IPU) to provide auxiliary and emergency power to the aircraft's electrical system. The generator consists of a four pole rotor, nominally 4.30 inches in diameter, housed within a stator assembly. The clearance gap between the rotor pole tip and the stator wall is nominally 0.020 inches. The rotor is designed to rotate at 55,000 rpm. Rotor cooling is achieved by convection to air flowing axially through the rotor cavities. The convective film coefficient for each unique pole face, as well as an overall film coefficient for the four pole faces are inferred from the rate at which insulated test rates cool when subjected to various rates of rotor rotational speed and axial airflows. The high velocity of the rotor tips in close proximity to the stator wall results in aerodynamic heating of the air in the gap region. Convective film coefficients associated with high speed flow must be referenced to the adiabatic wall temperature to account for the effects of viscous heating. An estimate of the adiabatic wall temperature in the rotor gap region is developed analytically starting with the fundamental case of high-speed, wall-driven flow. These analytical results for wall-driven flow are verified experimentally using a smooth poled rotor. The analytically predicted film coefficients are within 10% of the experimental results. Experiments are conducted for rotor speeds ranging from 5,000 to 30,000 rpm and axial airflows ranging from 0.036 to 0.073 kg/s (0.08 to 0.16 lbm/s). The convective film coefficients for each pole face as well as average values representing heat loss from the combined faces are presented in terms of Stanton and Nusselt

  11. Magnetoresistive chip cytometer.

    PubMed

    Loureiro, J; Andrade, P Z; Cardoso, S; da Silva, C L; Cabral, J M; Freitas, P P

    2011-07-01

    Although conventional state-of-the-art flow cytometry systems provide rapid and reliable analytical capacities, they are bulky, expensive and complex. To overcome these drawbacks modern flow cytometers have been developed with enhanced portability for on-site measurements. Unlike external fluorescent/optical detectors, magnetoresistive sensors are micro-fabricated, can be integrated within microfluidic channels, and can detect magnetically labelled cells. This work describes the real-time detection of single magnetically labelled cells with a magnetoresistive based cell cytometer. For Kg1-a cells magnetically labelled with 50 nm CD34 microbeads (Milteny) flowing through a 150 μm wide, 14 μm high microchannel, with speeds around 1 cm s(-1), bipolar signals with an average amplitude of 10-20 μV were observed corresponding to cell events. The number of cells counted by the spin valve cytometer has been compared with that obtained with a hemocytometer. Both methods agree within the respective error bars. PMID:21562656

  12. Support of NASA ADR/ Cross-Enterprise NRA Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10K to 50mK, Development of a Heat Switch

    NASA Technical Reports Server (NTRS)

    Richards, Paul L.

    2005-01-01

    Mechanical heat switches are used in conjunction with sorption refrigerators, adiabatic demagnetization refrigerators and for other cryogenic tasks including the pre-cooling cryogenic systems. They use a mechanical actuator which closes Au plated Cu jaws on an Au plated Cu bar. The thermal conductance in the closed position is essentially independent of the area of the jaws and proportional to the force applied. It varies linearly with T. It is approximately 10mW/K for 200 N at 1.5K. In some applications, the heat switch can be driven from outside the cryostat by a rotating rod and a screw. Such heat switches are available commercially from several sources. In other applications, including systems for space, it is desirable to drive the switch using a cold linear motor, or solenoid. Superconducting windings are used at temperatures s 4.2K to minimize power dissipation, but are not appropriate for pre-cooling a system at higher temperatures. This project was intended to improve the design of solenoid activated mechanical heat switches and to provide such switches as required to support the development of Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10 K to 50 mK at GSFC. By the time funding began in 5/1/01, the immediate need for mechanical heat switches at GSFC had subsided but, at the same time, the opportunity had arisen to improve the design of mechanical heat switching by incorporating a "latching solenoid". In this device, the solenoid current is required only for changing the state of the switch and not during the whole time that the switch is closed.

  13. Voltage-controlled oxide barriers in organic/hybrid spin valves based on tunneling anisotropic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Grünewald, M.; Homonnay, N.; Kleinlein, J.; Schmidt, G.

    2014-11-01

    Resistive switching, i.e., the remanent (reversible) change of a device's resistance, is a widely investigated phenomenon as it holds the prospect for realizing high density memory devices. Resistive switching has also been observed in organic semiconductors; however, a clear understanding of the underlying physics could not yet be obtained. Possible options are for example interface effects at the electrodes or the formation and destruction of filaments. Here we present resistive switching in an organic spin valve based on tunneling anisotropic magnetoresistance. Similar to experiments in conventional spin-valve devices with two ferromagnetic electrodes we observe a modulation of the magnetoresistance by the electrical switching. However, as the magnetoresistance effect's origin is unambiguously clear, which is not always the case for effects in conventional structures, it can be exploited to prove that a tunnel barrier exists at the interface between the ferromagnetic oxide electrode and the organic semiconductor. Furthermore our experiments reveal that this barrier is reversibly modified during the switching, which causes both the change in magnetoresistance and total device resistance. Quantitative analysis indicates that the barrier is situated in the oxide layer. A phenomenological model provides a full description of the microscopic processes involved in the resistive switching.

  14. Transversal magnetoresistance in Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Klier, J.; Gornyi, I. V.; Mirlin, A. D.

    2015-11-01

    We explore theoretically the magnetoresistivity of three-dimensional Weyl and Dirac semimetals in transversal magnetic fields within two alternative models of disorder: (i) short-range impurities and (ii) charged (Coulomb) impurities. Impurity scattering is treated using the self-consistent Born approximation. We find that an unusual broadening of Landau levels leads to a variety of regimes of the resistivity scaling in the temperature-magnetic field plane. In particular, the magnetoresistance is nonmonotonous for the white-noise disorder model. For H →0 the magnetoresistance for short-range impurities vanishes in a nonanalytic way as H1 /3. In the limits of strongest magnetic fields H , the magnetoresistivity vanishes as 1 /H for pointlike impurities, while it is linear and positive in the model with Coulomb impurities.

  15. Anomalous oscillatory magnetoresistance in superconductors

    NASA Astrophysics Data System (ADS)

    Kunchur, Milind N.; Dean, Charles L.; Ivlev, Boris I.

    2016-08-01

    We report oscillatory magnetoresistance in various superconducting films, with a magnetic-field period Δ B ˜0.1 T that is essentially independent of sample dimensions, temperature, transport current, and the magnitude and orientation of the magnetic field, including magnetic fields oriented parallel to the film plane. The characteristics of these oscillations seem hard to reconcile with previously established mechanisms for oscillations in magnetoresistance, suggesting the possibility of another type of physical origin.

  16. Evaluation of Magnetoresistive RAM for Space Applications

    NASA Technical Reports Server (NTRS)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  17. Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures

    PubMed Central

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K.; Neto, Antonio H. Castro; Yang, Hyunsoo

    2015-01-01

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron–nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen–Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications. PMID:26388149

  18. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    SciTech Connect

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  19. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 2. Biomarkers of exposure.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Morgan, Walter T; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) was conducted, and subjects' experience with the products was followed for 24 weeks. Differences in biomarkers of tobacco exposure between smokers and never smokers at baseline and among groups relative to each other and over time were assessed. Results indicated reduced exposure to many potentially harmful constituents found in cigarette smoke following product switching. Findings support differences in exposure from the use of various tobacco products and are relevant to the understanding of a risk continuum among tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26554277

  20. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 2. Biomarkers of exposure

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Morgan, Walter T.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) was conducted, and subjects’ experience with the products was followed for 24 weeks. Differences in biomarkers of tobacco exposure between smokers and never smokers at baseline and among groups relative to each other and over time were assessed. Results indicated reduced exposure to many potentially harmful constituents found in cigarette smoke following product switching. Findings support differences in exposure from the use of various tobacco products and are relevant to the understanding of a risk continuum among tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26554277

  1. Case studies of mental models in home heat control: searching for feedback, valve, timer and switch theories.

    PubMed

    Revell, Kirsten M A; Stanton, Neville A

    2014-05-01

    An intergroup case study was undertaken to determine if: 1) There exist distinct mental models of home heating function, that differ significantly from the actual functioning of UK heating systems; and 2) Mental models of thermostat function can be categorized according to Kempton's (1986) valve and feedback shared theories, and others from the literature. Distinct, inaccurate mental models of the heating system, as well as thermostat devices in isolation, were described. It was possible to categorise thermostat models by Kempton's (1986) feedback shared theory, but other theories proved ambiguous. Alternate control devices could be categorized by Timer (Norman, 2002) and Switch (Peffer et al., 2011) theories. The need to consider the mental models of the heating system in terms of an integrated set of control devices, and to consider user's goals and expectations of the system benefit, was highlighted. The value of discovering shared theories, and understanding user mental models, of home heating, are discussed with reference to their present day relevance for reducing energy consumption. PMID:23731626

  2. Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

    NASA Astrophysics Data System (ADS)

    Phillips, L. C.; Lombardo, A.; Ghidini, M.; Yan, W.; Kar-Narayan, S.; Hämäläinen, S. J.; Barbone, M.; Milana, S.; van Dijken, S.; Ferrari, A. C.; Mathur, N. D.

    2016-03-01

    Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ˜32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

  3. 360 degree domain walls monitored by anisotropic magnetoresistance measurements

    NASA Astrophysics Data System (ADS)

    Nam, Chunghee; Ross, C. A.

    2013-03-01

    This study investigates the electrical observation of the formation of a 360° magnetic domain wall (360DW) in an elliptical Co ring structure. Because the 360DW consists of two 180° domain walls, a decrease in resistance is observed in the switching process due to anisotropic magnetoresistance (AMR). Certain AMR measurements exhibit an increase in the resistance in the switching process, indicating that a flux-closure vortex state is formed without first forming a 360DW state. The difference between the 360DW and vortex state in the switching process reflects differences in the DW depinning mechanism from the onion state. The minor loop of the AMR measurements is also dependent on the initial magnetic configuration between the 360DW and the vortex state.

  4. Magnetoresistive smart fluid (marsonpol) and devices

    NASA Astrophysics Data System (ADS)

    Reji, John; Suresh, G.; Narayanadas, D. J.

    2003-10-01

    Magnetorheological fluid, Electrorheological fluid and ferro fluids are the smart fluids known today. These fluids are either electrically conductive or non conductive. They do not exhibit variable electrical resistance or switching behavior. Of recent interest to researchers has been the development of new types of magnetoresistive materials. Such materials can be of large practical importance, as they will change their electrical resistance in the presence of a magnetic field. However, most materials only exhibit appreciable magnetoresistance under extreme conditions, such as high magnetic fields or low temperatures. A smart fluid whose electrical resistance can be varied by several orders of magnitude under nominal level of magnetic field is reported in this paper (designated MARSONPOL). In the absence of a magnetic field the fluid is an insulator having electrical resistance in the order of 108 ohm-meter and in the presence of a magnetic field the resistance of the material reduces to less than 1 ohm-meter, at room temperature of 30°C. The sharp and reversible change in resistivity makes the material transform from an insulator to conductor, rendering properties characteristic of either state, within a fraction of a second. Fluids with such characteristics are not reported in the literature making this development a breakthrough and opening up potentials for the development of several smart devices. One such device is the magnetic field sensor probe currently under development at NPOL. A capsule of MARSONPOL forms the basic sensor element. Depending on the strength of the Magnetic field, the electrical resistivity of the capsule undergoes changes. The present paper will discuss details of the smart fluid as well as features of the magnetic field sensor.

  5. Photoinduced local heating in silica photonic crystals for fast and reversible switching.

    PubMed

    Gallego-Gómez, Francisco; Blanco, Alvaro; López, Cefe

    2012-12-01

    Fast and reversible photonic-bandgap tunability is achieved in silica artificial opals by local heating. The effect is fully reversible as heat rapidly dissipates through the non-irradiated structure without active cooling and water is readsorbed. The performance is strongly enhanced by decreasing the photoirradiated opal volume, allowing bandgap shifts of 12 nm and response times of 20 ms. PMID:22976241

  6. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 3. Biomarkers of biological effect.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Morgan, Walter T; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) for 24 weeks was conducted. Evaluation of biomarkers of biological effect (e.g. inflammation, lipids, hypercoaguable state) indicated that the majority of consistent and statistically significant improvements over time within each group were observed in markers of inflammation. Consistent and statistically significant differences in pairwise comparisons between product groups were not observed. These findings are relevant to the understanding of biomarkers of biological effect related to cigarette smoking as well as the risk continuum across various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525962

  7. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 1. Study design and methodology.

    PubMed

    Ogden, Michael W; Marano, Kristin M; Jones, Bobbette A; Stiles, Mitchell F

    2015-01-01

    A randomized, multi-center study was conducted to assess potential improvement in health status measures, as well as changes in biomarkers of tobacco exposure and biomarkers of biological effect, in current adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) evaluated over 24 weeks. Study design, conduct and methodology are presented here along with subjects' disposition, characteristics, compliance and safety results. This design and methodology, evaluating generally healthy adult smokers over a relatively short duration, proved feasible. Findings from this randomized study provide generalized knowledge of the risk continuum among various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525849

  8. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 3. Biomarkers of biological effect

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Morgan, Walter T.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study of adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) for 24 weeks was conducted. Evaluation of biomarkers of biological effect (e.g. inflammation, lipids, hypercoaguable state) indicated that the majority of consistent and statistically significant improvements over time within each group were observed in markers of inflammation. Consistent and statistically significant differences in pairwise comparisons between product groups were not observed. These findings are relevant to the understanding of biomarkers of biological effect related to cigarette smoking as well as the risk continuum across various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525962

  9. Switching from usual brand cigarettes to a tobacco-heating cigarette or snus: Part 1. Study design and methodology

    PubMed Central

    Ogden, Michael W.; Marano, Kristin M.; Jones, Bobbette A.; Stiles, Mitchell F.

    2015-01-01

    Abstract A randomized, multi-center study was conducted to assess potential improvement in health status measures, as well as changes in biomarkers of tobacco exposure and biomarkers of biological effect, in current adult cigarette smokers switched to tobacco-heating cigarettes, snus or ultra-low machine yield tobacco-burning cigarettes (50/group) evaluated over 24 weeks. Study design, conduct and methodology are presented here along with subjects’ disposition, characteristics, compliance and safety results. This design and methodology, evaluating generally healthy adult smokers over a relatively short duration, proved feasible. Findings from this randomized study provide generalized knowledge of the risk continuum among various tobacco products (ClinicalTrials.gov Identifier: NCT02061917). PMID:26525849

  10. Switch mode power supply for microwave heating based on the Boucherot effect.

    PubMed

    Georghiou, G E; Meredith, R; Metaxas, A C; Gurwicz, D

    1999-01-01

    This paper describes a new self-resonating switch-mode power-supply for driving CW magnetrons, based on the Boucherot effect. A detailed circuit analysis is given and its performance is evaluated for an 800 W/2450 MHz magnetron, whilst work at high power driving a magnetron up to 40 kW is reported. A comparison of the supply with the conventional power-supply used in microwave ovens is made and the principal features of the new design are found to be: low energy dissipation under short-circuit conditions, low ripple current and voltage waveforms that result in more precise control in the range 20-100% of rated power, high efficiencies and small size and weight. PMID:10687152

  11. Interference-induced thermoelectric switching and heat rectification in quantum Hall junctions

    NASA Astrophysics Data System (ADS)

    Vannucci, Luca; Ronetti, Flavio; Dolcetto, Giacomo; Carrega, Matteo; Sassetti, Maura

    2015-08-01

    Interference represents one of the most striking manifestations of quantum physics in low-dimensional systems. Despite evidence of quantum interference in charge transport having been known for a long time, signatures of interference-induced thermal properties have been reported only recently, paving the way for the phase-coherent manipulation of heat in mesoscopic devices. In this work we show that anomalous thermoelectric properties and efficient heat rectification can be achieved by exploiting the phase-coherent edge states of quantum Hall systems. By considering a tunneling geometry with multiple quantum point contacts, we demonstrate that the interference paths effectively break the electron-hole symmetry, allowing for a thermoelectric charge current flowing either from hot to cold or vice versa, depending on the details of the tunnel junction. Correspondingly, an interference-induced heat current is predicted, and we are able to explain these results in terms of an intuitive physical picture. Moreover, we show that heat rectification can be achieved by coupling two quantum Hall systems with different filling factors, and that this effect can be enhanced by exploiting the interference properties of the tunnel junction.

  12. Giant tunneling magnetoresistance in silicene

    SciTech Connect

    Wang, Yu; Lou, Yiyi

    2013-11-14

    We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

  13. Giant magnetoresistance in nanogranular magnets.

    SciTech Connect

    Glatz, A.; Beloborodov, I. S.; Vinokur, V. M.; Materials Science Division; Univ. of Chicago

    2008-05-01

    We study the giant magnetoresistance of nanogranular magnets in the presence of an external magnetic field and finite temperature. We show that the magnetization of arrays of nanogranular magnets has hysteretic behavior at low temperatures leading to a double peak in the magnetoresistance which coalesces at high temperatures into a single peak. We numerically calculate the magnetization of magnetic domains and the motion of domain walls in this system using a combined mean-field approach and a model for an elastic membrane moving in a random medium, respectively. From the obtained results, we calculate the electric resistivity as a function of magnetic field and temperature. Our findings show excellent agreement with various experimental data.

  14. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas H.; Kusmartsev, Feodor V.

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities ( σ M / σ S ); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio ( σ M / σ S ) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene

  15. Extraordinary magnetoresistance: sensing the future

    NASA Astrophysics Data System (ADS)

    Hewett, Thomas; Kusmartsev, Feodor

    2012-06-01

    Simulations utilising the finite element method (FEM) have been produced in order to investigate aspects of circular extraordinary magnetoresistance (EMR) devices. The effect of three specific features on the resultant magnetoresistance were investigated: the ratio of the metallic to semiconducting conductivities (σ M/σ S); the semiconductor mobility; and the introduction of an intermediate region at the semiconductormetal interface in order to simulate a contact resistance. In order to obtain a large EMR effect the conductivity ratio (σ M/σ S) is required to be larger than two orders of magnitude; below this critical value the resultant magnetoresistance effect is dramatically reduced. Large mobility semiconductors exhibit larger EMR values for a given field (below saturation) and reduce the magnetic field required to produce saturation of the magnetoresistance. This is due to a larger Hall angle produced at a given magnetic field and is consistent with the mechanism of the EMR effect. Since practical magnetic field sensors are required to operate at low magnetic fields, high mobility semiconductors are required in the production of more sensitive EMR sensors. The formation of a Schottky barrier at the semiconductor-metal interface has been modelled with the introduction of a contact resistance at the semiconductor-metal interface. Increasing values of contact resistance are found to reduce the EMR effect with it disappearing altogether for large values. This has been shown explicitly by looking at the current flow in the system and is consistent with the mechanism of the EMR effect. The interface resistance was used to fit the simulated model to existing experimental data. The best fit occurred with an interface with resistivity of 1.55×10-4 m (overestimate). The EMR effect holds great potential with regard to its future application to magnetic field sensors. The design of any such devices should incorporate high mobility materials (such as graphene) along

  16. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1‑xMnxTe

    NASA Astrophysics Data System (ADS)

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-05-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality.

  17. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1−xMnxTe

    PubMed Central

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  18. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

    PubMed

    Kriener, M; Nakajima, T; Kaneko, Y; Kikkawa, A; Yu, X Z; Endo, N; Kato, K; Takata, M; Arima, T; Tokura, Y; Taguchi, Y

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  19. Surface plasmon enhanced heating of gold nanoparticles: A plasmonic optical switch

    NASA Astrophysics Data System (ADS)

    Evans, Philip G.

    Recent work by Lereu et al. (Appl. Phys. Lett. Vol. 86, 154101, 2005) demonstrates a method of all-optical transfer of modulation signals using surface plasmon excitation on thin gold films. Localized heating of the film, resulting from surface plasmon decay, alter the optical properties of the device. A similar optical modulation method is now presented using gold nanoparticles. Computational models are used to generate realistic values of the thermo-optical response of gold and the thermal dynamics of a hot nanoparticle-substrate device. Differential pump-probe reflectivity measurements were perferomed and demonstrate modulation frequencies of upto 10kHz, an improvement of two orders of magnitude over the thin-film device. Sample fabrication techniques using physical vapor deposition and interference lithography, and heat transport on the nanoscale are also discussed.

  20. Anisotropic Magnetoresistance State Space of Permalloy Nanowires with Domain Wall Pinning Geometry

    PubMed Central

    Corte-León, Héctor; Nabaei, Vahid; Manzin, Alessandra; Fletcher, Jonathan; Krzysteczko, Patryk; Schumacher, Hans W.; Kazakova, Olga

    2014-01-01

    The domain wall-related change in the anisotropic magnetoresistance in L-shaped permalloy nanowires is measured as a function of the magnitude and orientation of the applied magnetic field. The magnetoresistance curves, compiled into so-called domain wall magnetoresistance state space maps, are used to identify highly reproducible transitions between domain states. Magnetic force microscopy and micromagnetic modelling are correlated with the transport measurements of the devices in order to identify different magnetization states. Analysis allows to determine the optimal working parameters for specific devices, such as the minimal field required to switch magnetization or the most appropriate angle for maximal separation of the pinning/depinning fields. Moreover, the complete state space maps can be used to predict evolution of nanodevices in magnetic field without a need of additional electrical measurements and for repayable initialization of magnetic sensors into a well-specified state. PMID:25116470

  1. Magnetoresistive magnetometer for space science applications

    NASA Astrophysics Data System (ADS)

    Brown, P.; Beek, T.; Carr, C.; O'Brien, H.; Cupido, E.; Oddy, T.; Horbury, T. S.

    2012-02-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz-1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm3, respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012.

  2. Oscillating Thermal Switch

    NASA Technical Reports Server (NTRS)

    Petrick, S. Walter

    1991-01-01

    Proposed heat switch transfers heat from source to sink in regular cycles. Self-sustaining; actuated by transferred heat, contains no moving parts, and needs no external heaters or electronic circuitry to synchronize heat-transfer periods or control heat-transfer rates. Intended for use in gas-sorption refrigerator.

  3. Optofluidic guiding, valving, switching and mixing based on plasmonic heating in a random gold nanoisland substrate.

    PubMed

    Chen, Jiajie; Kang, Zhiwen; Wang, Guanghui; Loo, Jacky Fong Chuen; Kong, Siu Kai; Ho, Ho-Pui

    2015-06-01

    We present a versatile optofluidic flow manipulation scheme based on plasmonic heating in a random gold nanoisland substrate (Au-NIS). With its highly efficient conversion of optical power to hydrodynamic actuation, the reported substrate is used for laser-controlled optofluidic manipulation. It is the first time that microfluidic flow guiding, valving, and mixing within the same functional substrate has been realised. Plasmonic heating provides power for guiding the sample flow inside a microfluidic channel at controlled speed and transport of small particles or living cells is demonstrated. We have also made a laser-actuated microfluidic valve through controlling the surface wettability of the sample/Au-NIS interface. When the laser power density is sufficiently high to generate a bubble, localized convection around the bubble can lead to efficient sample mixing within a microfluidic chamber. The reported Au-NIS scheme practically offers a programmable functional surface on which users have the freedom to control the wetting characteristics with a focused laser beam. We have verified that this optofluidic approach induces insignificant degradation in cell viability. The reported scheme therefore offers a wide range of application possibilities in microfluidics and biomedical engineering, particularly those operated under a low Reynolds number. PMID:25963226

  4. Amplification effect of low-field magnetoresistance in silicon dual p - n junctions

    NASA Astrophysics Data System (ADS)

    Yang, Dezheng; Wang, Tao; Si, Mingsu; Wang, Fangcong; Zhou, Shiming; Xue, Desheng

    Nonmagnetic semiconductors with large magnetoresistance are identified as promising feature for the development of magnetoelectronics. However, to manipulate the magnetoresistance require the magnetic field of several Tesla. In this work, we realized an amplification effect of low-field magnetoresistance based on an elementary electronic building block: dual p - n junction. Analogous to the electrical amplification effect of transistor p - n -p junction, where the coupling current between p - n and n - p junctions is tuned by base current, in a silicon p + - n - n + device we demonstrate that the coupling strength of p + - n and n - n + junctions can be tuned by magnetic field. Owing to the amplification effect of magnetic-field-manipulated coupling, at a small magnetic field from 0 to 0.1 T the device is directly switched from conducting state ''on'' (10000 ohms) to blocking state ''off'' (5 megohm), yielding an magnetoresistance of 50,000 per cent and magnetic field sensitivity as high as 50 per cent Oe-1. Such a combination of magnetoresistance and high sensitivity not only makes the semiconductor device available in the magnetic field sensing industry, but also permits a new kind of magnetic-field-manipulated semiconductor electronics.

  5. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  6. Dual magnetoresistive heads for high-density magnetic recording

    NASA Astrophysics Data System (ADS)

    Trindade, Isabel Maria Goncalves

    2000-11-01

    In this thesis, novel magnetoresistive heads were developed and tested. The head designs had been proposed and analyzed with 3-D micromagnetic simulations. The dual magnetoresistive heads were of technological interest because they could provide higher linear resolution than conventional magnetoresistive heads, with less micro- fabrication complexity. As the demands for higher storage capacity and higher data rate increase, it is important to investigate alternative transducer designs that can provide suitable signal to noise ratio at smaller bits (smaller track-widths, narrower separation between tracks and smaller bit lengths). Dual magnetoresistive heads with track-widths of 2 microns and gap lengths of 80 nm were fabricated by micro-fabrication techniques. Thin film materials incorporating magnetic materials, metals and insulators were developed and prepared by sputtering. Optical lithography processes were developed and used to pattern the films with lateral dimensions of the order of a micron. Read-elements on wafers were characterized by Kerr microscope imaging and magnetoresistance measurements. The characterization involved single domain state stabilization, antiparallel magnetic state and electrical and magnetic mismatch between the two permalloy stripes of the dual magnetoresistive read- elements. The read-elements were built into nano-sliders and tested on spin stands with either two arm actuators (one for the read head, another for the write head) or a commercial Gukiz spin stand provided with one actuator for two separate heads. The time-domain response, spectral response, cross track-profile, off-track response and adjacent track interference were tested and the experimental results compared to theoretical models. The head performance on longitudinal medium with an areal magnetic product of Mrδ = 0-5 memu/cm2 and Mr δ = 1 memu/cm2 indicate that the head operated mainly in a linear regime, with a signal output amplitude directly proportional to the

  7. Measurements of current-voltage-induced heating in the Al/SrTiO3-xNy/Al memristor during electroformation and resistance switching

    NASA Astrophysics Data System (ADS)

    Shkabko, A.; Aguirre, M. H.; Marozau, I.; Lippert, T.; Weidenkaff, A.

    2009-10-01

    Heating of the Al/SrTiO3-xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (|V|<±3 V). Application of a threshold voltage appropriate for resistance switching (|V|≥±3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 °C. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface.

  8. Evaluation of Biomarkers of Exposure in Smokers Switching to a Carbon-Heated Tobacco Product: A Controlled, Randomized, Open-Label 5-Day Exposure Study

    PubMed Central

    Haziza, Christelle; Weitkunat, Rolf; Magnette, John

    2016-01-01

    Introduction: Tobacco harm reduction aims to provide reduced risk alternatives to adult smokers who would otherwise continue smoking combustible cigarettes (CCs). This randomized, open-label, three-arm, parallel-group, single-center, short-term confinement study aimed to investigate the effects of exposure to selected harmful and potentially harmful constituents (HPHCs) of cigarette smoke in adult smokers who switched to a carbon-heated tobacco product (CHTP) compared with adult smokers who continued to smoke CCs and those who abstained from smoking for 5 days. Methods: Biomarkers of exposure to HPHCs, including nicotine and urinary excretion of mutagenic material, were measured in 24-hour urine and blood samples in 112 male and female Caucasian smokers switching from CCs to the CHTP ad libitum use. Puffing topography was assessed during product use. Results: Switching to the CHTP or smoking abstinence (SA) resulted in marked decreases from baseline to Day 5 in all biomarkers of exposure measured, including carboxyhemoglobin (43% and 55% decrease in the CHTP and SA groups, respectively). The urinary excretion of mutagenic material was also markedly decreased on Day 5 compared with baseline (89% and 87% decrease in the CHTP and SA groups, respectively). No changes in biomarkers of exposure to HPHCs or urinary mutagenic material were observed between baseline and Day 5 in the CC group. Conclusions: Our results provide clear evidence supporting a reduction in the level of exposure to HPHCs of tobacco smoke in smokers who switch to CHTP under controlled conditions, similar to that observed in SA. Implications: The reductions observed in biomarkers of exposure to HPHCs of tobacco smoke in this short-term study could potentially also reduce the incidence of cancer, cardiovascular and respiratory diseases in those smokers who switch to a heated tobacco product. PMID:26817490

  9. Automatic thermal switch. [spacecraft applications

    NASA Technical Reports Server (NTRS)

    Cunningham, J. W.; Wing, L. D. (Inventor)

    1983-01-01

    An automatic thermal switch to control heat flow includes two thermally conductive plates and a thermally conductive switch saddle pivotally mounted to the first plate. A flexible heat carrier is connected between the switch saddle and the second plate. A phase-change power unit, including a piston coupled to the switch saddle, is in thermal contact with the first thermally conductive plate. A biasing element biases the switch saddle in a predetermined position with respect to the first plate. When the phase-change power unit is actuated by an increase in heat transmitted through the first place, the piston extends and causes the switch saddle to pivot, thereby varying the thermal conduction between the two plates through the switch saddle and flexible heat carrier. The biasing element, switch saddle, and piston can be arranged to provide either a normally closed or normally opened thermally conductive path between the two plates.

  10. Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

    NASA Astrophysics Data System (ADS)

    Avci, Can Onur; Garello, Kevin; Ghosh, Abhijit; Gabureac, Mihai; Alvarado, Santos F.; Gambardella, Pietro

    2015-07-01

    Magnetoresistive effects are usually invariant on inversion of the magnetization direction. In non-centrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators.

  11. Magnetoresistance Anisotropy in WTe2

    NASA Astrophysics Data System (ADS)

    Thoutam, Laxman Raju; Wang, Yonglei; Xiao, Zhili; Das, Saptarshi; Luican Mayer, Adina; Divan, Ralu; Crabtree, George W.; Kwok, Wai Kwong

    We report the angle dependence of the magnetoresistance in WTe2. Being a layered material, WTe2 is considered to be electronically two-dimensional (2D). Our results demonstrate that it is in fact 3D with an anisotropy of effective mass as small as 2. We measured the magnetic field dependence of the sample resistance R(H) at various angles between the applied magnetic field with respect to the c-axis of the crystal and found that they can be scaled based on the mass anisotropy, which changes from ~2 to ~5 with decreasing temperature in the Fermi liquid state. We will also discuss the origin of the turn-on temperature behavior in this material.

  12. Magnetoresistance behavior of elliptical ring nanomagnets in close proximity with magnetic elements

    NASA Astrophysics Data System (ADS)

    Jain, S.; Adeyeye, A. O.

    2009-04-01

    We have investigated the giant magnetoresistance (GMR) responses of the pseudospin valve elliptical rings in close proximity with individual magnetic elements. Significant modifications of the GMR responses were observed due to the effects of magnetostatic coupling between the rings and the magnetic elements. We observed that the vortex state stability is significantly sensitive to the position, orientation of the magnetic elements, and the direction of the applied field. We also investigated the switching field reproducibility of the rings for onion→vortex and vortex→onion transitions and observed that the ring with asymmetrically placed magnetic elements shows the most reproducible switching states.

  13. Competing Mechanisms in Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Koopmans, Bert

    2013-03-01

    A surprisingly large ``organic magnetoresistance'' (OMAR) has been found in both polymers and small molecule organic semiconductors at relatively small applied magnetic fields (~ 5 mT) and at room temperature. Unlike spin-injection devices, where the occurrence of a finite spin polarization of the current is essential for measuring a finite magnetoresistance, OMAR is generally considered to be due to spin correlations between spin carrying particles in the organic material. Although the microscopic mechanisms of hyperfine field induced spin mixing are relatively well understood, it is still intensively debated which particles are involved and how they can affect the current in such a drastic manner. In this presentation recent developments and new insights as to the underlying physics are discussed. Quantitative models will be introduced, based on different pairs of particles and mechanisms, and giving rise to effects at a variety of field scales. It will be discussed how specific device physics causes a non-trivial relation between microscopic spin-dependent reactions and macroscopic device behaviour. Finally, it will be shown how comprehensive studies on especially engineered organic systems, including polymer-fullerene blends and molecular doping, can be used to pinpoint the relevance of different mechanisms in the complementary regimes. The experimentally observed linewidth, sign and amplitude of both ``high-field'' (>100 mT) and ``low-field'' (~ 5 mT) effects, as well as their bias voltage dependence display very pronounced features as a function of fullerene doping. They provide unique fingerprints for which mechanism is of relevance. After careful analysis, this allows for identification of three earlier proposed mechanisms, involving exciton-charge, electron-hole and bipolaron (polarons of like charge) reactions. Present activities are aiming at using this insight for tailoring OMAR response by design.

  14. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  15. Impurity-assisted tunneling magnetoresistance under a weak magnetic field.

    PubMed

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation. PMID:25325651

  16. Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field

    NASA Astrophysics Data System (ADS)

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E.; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation.

  17. Reflective HTS switch

    DOEpatents

    Martens, Jon S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  18. Reflective HTS switch

    DOEpatents

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  19. Magnetoresistance in Boron Carbide junctions

    NASA Astrophysics Data System (ADS)

    Day, Ellen; Sokolov, A.; Baruth, A.; Robertson, B. W.; Adenwalla, S.

    2007-03-01

    The properties of thin insulator layers are crucial to the performance of magnetic tunnel junctions. Commercial requirements are a device with a high tunnel magnetoresistance (TMR) with low cost and high stability. At present the vast majority of barriers are made from amorphous Al2O3 and crystalline MgO. The TMR value depends not only on the spin-dependent electronic structure of the electrodes, but on the metal-insulator interface. Oxide-type barriers may suffer from local vacancies and other type of defects, resulting in oxygen diffusion, making the TMR value unstable with time. We present TMR results obtained on a non-oxide barrier, boron carbide (B10C2) for applications in magnetic tunnel junctions. This low Z inorganic material can be grown by plasma enhanced chemical vapor deposition (PECVD) without pinholes in the ultra thin film regime. PECVD grown boron carbide is an excellent dielectric with resistivities in the range of 10^7 ohm-cm, with a band gap that can be adjusted from 0.7 eV to 1.9 eV by altering the boron to carbon ratio and to band gap values well above 2.7 eV by adding phosphorus. This creates a unique opportunity for experimental study of a broad spectrum of phenomena, related to the dielectric properties of the barrier.

  20. Tunneling magnetoresistive heads for magnetic data storage.

    PubMed

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  1. Reusable fast opening switch

    DOEpatents

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  2. Spin Hall magnetoresistance at high temperatures

    SciTech Connect

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-02-02

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y{sub 3}Fe{sub 5}O{sub 12} (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.

  3. Scanning magnetoresistive microscopy: An advanced characterization tool for magnetic nanosystems.

    PubMed

    Mitin, D; Grobis, M; Albrecht, M

    2016-02-01

    An advanced scanning magnetoresistive microscopy (SMRM) - a robust magnetic imaging and probing technique - will be presented, which utilizes state-of-the-art recording heads of a hard disk drive as sensors. The spatial resolution of modern tunneling magnetoresistive sensors is nowadays comparable to the more commonly used magnetic force microscopes. Important advantages of SMRM are the ability to detect pure magnetic signals directly proportional to the out-of-plane magnetic stray field, negligible sensor stray fields, and the ability to apply local bipolar magnetic field pulses up to 10 kOe with bandwidths from DC up to 1 GHz. Moreover, the SMRM can be further equipped with a heating stage and external magnetic field units. The performance of this method and corresponding best practices are demonstrated by presenting various examples, including a temperature dependent recording study on hard magnetic L1(0) FeCuPt thin films, imaging of magnetic vortex states in an in-plane magnetic field, and their controlled manipulation by applying local field pulses. PMID:26931856

  4. Scanning magnetoresistive microscopy: An advanced characterization tool for magnetic nanosystems

    NASA Astrophysics Data System (ADS)

    Mitin, D.; Grobis, M.; Albrecht, M.

    2016-02-01

    An advanced scanning magnetoresistive microscopy (SMRM) — a robust magnetic imaging and probing technique — will be presented, which utilizes state-of-the-art recording heads of a hard disk drive as sensors. The spatial resolution of modern tunneling magnetoresistive sensors is nowadays comparable to the more commonly used magnetic force microscopes. Important advantages of SMRM are the ability to detect pure magnetic signals directly proportional to the out-of-plane magnetic stray field, negligible sensor stray fields, and the ability to apply local bipolar magnetic field pulses up to 10 kOe with bandwidths from DC up to 1 GHz. Moreover, the SMRM can be further equipped with a heating stage and external magnetic field units. The performance of this method and corresponding best practices are demonstrated by presenting various examples, including a temperature dependent recording study on hard magnetic L10 FeCuPt thin films, imaging of magnetic vortex states in an in-plane magnetic field, and their controlled manipulation by applying local field pulses.

  5. Large magnetoresistance in the antiferromagnetic semimetal NdSb

    NASA Astrophysics Data System (ADS)

    Wakeham, N.; Bauer, E. D.; Neupane, M.; Ronning, F.

    2016-05-01

    There has been considerable interest in topological semimetals that exhibit extreme magnetoresistance (XMR). These have included materials lacking inversion symmetry such as TaAs, as well Dirac semimetals such as Cd3As2 . However, it was reported recently that LaSb and LaBi also exhibit XMR, even though the rocksalt structure of these materials has inversion symmetry, and the band-structure calculations do not show a Dirac dispersion in the bulk. Here, we present magnetoresistance and specific-heat measurements on NdSb, which is isostructural with LaSb. NdSb has an antiferromagnetic ground state and, in analogy with the lanthanum monopnictides, is expected to be a topologically nontrivial semimetal. We show that NdSb has an XMR of ˜104% , even within the antiferromagnetic state, illustrating that XMR can occur independently of the absence of time-reversal symmetry breaking in zero magnetic field. The persistence of XMR in a magnetic system offers the promise of new functionality when combining topological matter with electronic correlations. We also find that in an applied magnetic field below the Néel temperature there is a first-order transition, consistent with evidence from previous neutron scattering work.

  6. Distortion of Magnetic Domain Wall Measured by Magneto-Resistance Changes in a Co Nanoring.

    PubMed

    Nam, Chunghee

    2015-01-01

    The electrical anisotropic magneto-resistance (AMR) measurements were performed to see the formation of a 360 degree magnetic domain wall (360 DW) and distortion of the magnetic moments in a Co nanoring structure. Since the 360 DW is consisted of two 180 degree DWs, a decrease of the resistance was found in the switching process from the vortex to reverse onion state by the AMR effects, which is consistent with micromagnetic simulations. In addition, a decrease of the resistance in the switching process from the onion to vortex state was observed by the distortion of the local magnetic moments due to an applied magnetic field. The stochastic behavior in the switching process is caused by thermally induced magnetic moments changes. PMID:26328364

  7. Monte Carlo calculations of the magnetoresistance in magnetic multilayer structures with giant magnetoresistance effects

    NASA Astrophysics Data System (ADS)

    Prudnikov, V. V.; Prudnikov, P. V.; Romanovskiy, D. E.

    2016-06-01

    A Monte Carlo study of trilayer and spin-valve magnetic structures with giant magnetoresistance effects is carried out. The anisotropic Heisenberg model is used for description of magnetic properties of ultrathin ferromagnetic films forming these structures. The temperature and magnetic field dependences of magnetic characteristics are considered for ferromagnetic and antiferromagnetic configurations of these multilayer structures. The methodology for determination of the magnetoresistance by the Monte Carlo method is introduced; this permits us to calculate the magnetoresistance of multilayer structures for different thicknesses of the ferromagnetic films. The calculated temperature dependence of the magnetoresistance agrees very well with the experimental results measured for the Fe(0 0 1)–Cr(0 0 1) multilayer structure and CFAS–Ag–CFAS–IrMn spin-valve structure based on the half-metallic Heusler alloy Co2FeAl0.5Si0.5.

  8. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    DOEpatents

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  9. Magnetoresistance of single Permalloy circular rings

    NASA Astrophysics Data System (ADS)

    Vavassori, P.; Busato, A.; Chiapatti, A.; di Bona, A.; Valeri, S.; Metlushko, V.; Ilic, B.

    2007-09-01

    We have measured magnetoresistance in single, 1 μm external diameter, Permalloy (Ni 80Fe 20) circular rings with varied inner hole diameter of 150, 300, and 600 nm and film thickness of 25 nm. The Permalloy ring structures and the 10-nm-thick, 250-nm-wide Au nanocontacts were fabricated on a SiO 2/Si substrate using e-beam lithography. Using a four contact geometry we studied the dependence of the magnetoresistance on the direction of the applied field. The experimental data are explained by considering only the conventional anisotropic magnetoresistance effect. Numerical simulations of the current distribution within the samples combined with micromagnetic simulations of the field dependent magnetization profile, yield good agreement with the experimental data. Upon increasing the inner hole diameter (viz. decreasing the ring width) the magnetoresistance measurements show a transition of the reversal process from the "vortex nucleation-displacement-annihilation" sequence to the "onion state-reversed onion state" sequence, typical of narrow nanorings.

  10. Data center coolant switch

    SciTech Connect

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  11. Magnetoresistance of a Low-k Dielectric

    NASA Astrophysics Data System (ADS)

    McGowan, Brian Thomas

    Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a topic of debate. These material drawbacks have motivated the present work which aims both to contribute to the understanding of electronic conduction mechanisms in low-k dielectrics, and to improve the ability to experimentally characterize changes which occur within the material prior to TDDB failure. What follows is a study of the influence of an applied magnetic field on the conductivity of a low-k dielectric, or in other words, a study of the material's magnetoresistance. This study shows that low-k dielectrics used as intra-level dielectrics exhibit a relatively large negative magnetoresistance effect (˜2%) at room temperature and with modest applied magnetic fields (˜100 Oe). The magnetoresistance is attributed to the spin dependence of trapping electrons from the conduction band into localized electronic sites. Mixing of two-electron spin states via interactions between electron spins and the the spins of hydrogen nuclei is suppressed by an applied magnetic field. As a result, the rate of trapping is reduced, and the conductivity of the material increases. This study further demonstrates that the magnitude of the magnetoresistance changes as a function of time subjected to electrical bias and temperature stress. The rate that the magnetoresistance changes correlates to the

  12. Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs

    NASA Astrophysics Data System (ADS)

    Blokhin, Sergey A.; Maleev, Nikolai A.; Kuzmenkov, Alexander G.; Lott, James A.; Kulagina, Marina M.; Zadiranov, Yurii M.; Gladyshev, Andrey G.; Nadtochiy, Alexey M.; Nikitina, Ekaterina V.; Tikhomirov, Vladimir G.; Ledentsov, Nikolai N.; Ustinov, Viktor M.

    2012-03-01

    Detailed investigation of anomalous modal behavior in fabricated bottom-emitting intra-cavity contacted 960 nm range vertical cavity surface emitting lasers (VCSELs) have been performed. At low currents the broad-aperture VCSELs show multi-mode operation at 945 nm via whispering gallery-like modes. Subsequent increase of pump current results in rapid increase of fundamental mode intensity and switching to a pure single transverse mode lasing regime at 960 nm with the higher slope efficiency. As a result record single transverse mode output power of 15 mW with a side-mode-suppressionratio (SMSR) above 30 dB was achieved. The observed phenomena cannot be explained by oxide-index guiding or changes in current pumping. 2D heat transport simulations show a strong temperature gradient inside the microcavity due to an effective lateral heat-sinking. This creates an effective waveguide and results in lower optical losses for the fundamental mode. At fixed pump current in pulsed regime (pulse width < 400 ns) high-order modes dominate, however the subsequent increase of pulse width leads to a rapid rise of optical power for the fundamental mode and SMSR increasing. Thus the self-heating phenomena play a crucial role in observed VCSEL unusual modal behavior.

  13. Magnetization reversal of submicrometer Co rings with uniaxial anisotropy via scanning magnetoresistance microscopy

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoyong; Mazumdar, D.; Schrag, B. D.; Shen, W.; Xiao, Gang

    2004-07-01

    We have investigated the magnetization reversal mechanism of narrow submicrometer Co rings using scanning magnetoresistance microscopy. Thermal annealing in a magnetic field introduced a uniaxial anisotropy and significant structural changes in the samples. We have observed a complicated multidomain state at intermediate field ranges, and onion states at saturation, for samples annealed in a field. This observation is in contrast to the flux-closed vortex state for unannealed rings. Micromagnetic simulations have shown that the switching occurs through a gradual noncoherent buckling-like reversal process followed by coherent rotation.

  14. Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo

    2015-06-01

    We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.

  15. Switching time in laser pulse heat-assisted magnetic recording using L1{sub 0}-FePt nanoparticles

    SciTech Connect

    Lyberatos, A.; Weller, D.; Parker, G. J.

    2015-04-07

    Atomistic spin model simulations using Langevin dynamics are performed to study the factors that determine the thermomagnetic recording time window in FePt media. The onset of thermomagnetic writing occurs at a temperature T{sub o} larger than the Curie temperature T{sub c} as a result of the finite time of relaxation of the magnetization by the linear reversal mode. The Bloch relaxation rate of magnetization growth during cooling below T{sub c} is independent on the write field, provided the field is stronger than some threshold value. Application of a strong write field reduces switching time through better spin alignment in the paramagnetic regime. Finite size effects on the probability distribution of freezing temperatures T{sub f} and the free energy provide insight on the thermomagnetic reversal mechanism. Constraints on the “pulse-mode” of recording when the head field reverses direction during cooling are also considered.

  16. Modifying magnetic switching in permalloy film nanostructures using the native oxide

    NASA Astrophysics Data System (ADS)

    Hojem, A.; Bassett, D.; Wesenberg, D.; Mason, S. J.; Avery, A. D.; Zink, B. L.

    2014-03-01

    Thin films of nickel-iron alloys of the nominal concentration near 80% Ni, are very commonly used in applications and in fundamental studies of spin, charge and heat transport in nanomagnetic systems. These permalloy (Py) films are straightforward to grow by various techniques and typically produce predictable, controllable and repeatable magnetic properties, including small coercivity, low magnetocrystalline anisotropy, and low magnetostriction. We have found that greater complexity can be added to the switching behavior of thin films of permalloy by oxidation of thin (~4 nm) layers followed by subsequent growth of Py. Under some circumstances, this can cause apparent negative coercivity in the switching observed in anisotropic magnetoresistance (AMR) of micromachined strips with an expected shape anisotropy. Here we will present results on growth and AMR measurements of the effects in various oxidized Py-Py layered samples. It is not yet clear if the effects are reproducible enough to be used for intentional manipulation of switching behavior in Py nanostructures. We acknowledge support from the NSF CAREER award (DMR-0847796).

  17. Anisotropic giant magnetoresistance in NbSb₂

    DOE PAGESBeta

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10⁵% in 2 K and 9 T field, and 4.3 × 10⁶% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb₂. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomore » the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.« less

  18. Dirac State in Giant Magnetoresistive Materials

    NASA Astrophysics Data System (ADS)

    Wu, Y.; Jo, N. H.; Ochi, M.; Huang, L.; Mou, D.; Kong, T.; Mun, E.; Wang, L.; Lee, Y.; Bud'Ko, S. L.; Canfield, P. C.; Trivedi, N.; Arito, R.; Kaminski, A.

    We use ultrahigh resolution, tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of materials that recently were discovered to display titanic magnetoresistance. We find that that several of these materials have Dirac-like features in their band structure. In some materials those features are ``ordinary'' Dirac cones, while in others the linear Dirac dispersion of two crossing bands forms a linear object in 3D momentum space. Our observation poses an important question about the role of Dirac dispersion in the unusually high, non-saturating magnetoresistance of these materials. Research was supported by the US DOE, Office of Basic Energy Sciences under Contract No. DE-AC02-07CH11358; Gordon and Betty Moore Foundation EPiQS Initiative (Grant No. GBMF4411); CEM, a NSF MRSEC, under Grant No. DMR-1420451.

  19. Ultra-Sensitive Magnetoresistive Displacement Sensing Device

    NASA Technical Reports Server (NTRS)

    Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

    2003-01-01

    An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

  20. Electrical Resistivity and Negative Magnetoresistance in (SNBry)x Crystal

    NASA Astrophysics Data System (ADS)

    Kaneto, Keiichi; Sasa, Shigehiko; Yoshino, Katsumi; Inuishi, Yoshio

    1980-11-01

    Electrical resistivity, magnetoresistance and their temperature dependences in (SNBry)x are measured for various quantity of y. By bromination, negative magnetoresistance is enhanced at 4.2 K and also appears even at 77 K, at which temperature negative magnetoresistance is not observed in undoped (SN)x. These features are remarkable for the samples heavily doped and just after doping, and are abated by pumping bromine from (SNBry)x for a few days. The possible origins for the anomalous negative magnetoresistance are discussed taking the surface state of fiber bundles or crystal due to adsorped bromine into consideration.

  1. Magnetic switching fluctuations from sidewall oxides in MgO/FeCoB magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Pomeroy, J. M.; Read, J. C.

    2011-08-01

    Sharp magnetic switching distributions with coupling to magnetic sidewall oxides in FeCoB/MgO magnetic tunnel junctions (MTJs) are revealed by magneto-resistance first order reversal curve (MR-FORC) measurements. Tunneling magneto-resistance (TMR) and FORC data in units of % TMR/mT2 are shown for two identical devices that differ only by the annealing. The annealed sample has much larger TMR and correspondingly higher switching density ρ. In both cases, the MR-FORC data exhibit a prominent "checkerboard" pattern that implies coupling to magnetic oxides on the MTJ sidewalls.

  2. Effect of electronic reconstruction on cuprate-manganite spin switches.

    SciTech Connect

    Liu, Y.; Visani, C.; Nemes, N. M.; Fitzsimmons, M. R.; Zhu, L. Y.; Tornos, J.; Zhernenkov, M.; Hoffmann, A.; Leon, C.; Santamaria, J.; te Velthuis, S. G. E.

    2012-01-01

    We examine the anomalous inverse spin switch behavior in La{sub 0.7}Ca{sub 0.3}MnO{sub 3}(LCMO)/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizations is not sufficient to determine the magnetoresistance. Rather the field dependence of magnetoresistance is explained by the interplay between the applied magnetic field and the (exponential tail of the) induced exchange field in YBCO, the latter originating from the electronic reconstruction at the LCMO/YBCO interfaces.

  3. First Order Colossal Magnetoresistance Transitions in the Two-Orbital Model for Manganites

    SciTech Connect

    Sen, Cengiz; Alvarez, Gonzalo; Dagotto, Elbio R

    2010-01-01

    Large-scale Monte Carlo simulation results for the two-orbital model for manganites, including Jahn- Teller lattice distortions, are presented here. At hole density x 1=4 and in the vicinity of the region of competition between the ferromagnetic metallic and spin-charge-orbital ordered insulating phases, the colossal magnetoresistance (CMR) phenomenon is observed with a magnetoresistance ratio 10 000%. Our main result is that this CMR transition is found to be of first order in some portions of the phase diagram, in agreement with early results from neutron scattering, specific heat, and magnetization, thus solving a notorious discrepancy between experiments and previous theoretical studies. The first order characteristics of the transition survive, and are actually enhanced, when weak quenched disorder is introduced.

  4. Magnetic and magnetoresistance behaviors of particulate iron/vinyl ester resin nanocomposites

    NASA Astrophysics Data System (ADS)

    Guo, Zhanhu; Hahn, H. Thomas; Lin, Hongfei; Karki, Amar B.; Young, David P.

    2008-07-01

    Magnetoresistance (MR) behavior of vinyl ester monomer stabilized iron nanoparticles and heat-treated vinyl ester resin nanocomposites reinforced with iron nanoparticles were investigated. Vinyl ester monomer serves as a coupling agent with one side covalently bound onto the nanoparticle surface by a displacement reaction and the other end copolymerized with extra vinyl ester resin to form a robust entity. The particle loading and type of material (polymer or carbonized polymer) have a significant effect on the magnetic and MR properties. The heat-treated nanocomposites follow a tunneling conduction. After reduction annealing, the obtained nanocomposites possess a room temperature MR of 8.3 % at a field of 90 kOe.

  5. Switch wear leveling

    SciTech Connect

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  6. A phenomenological Landauer-type theory on colossal magnetoresistance

    NASA Astrophysics Data System (ADS)

    Ding, M.; Tian, G.-S.; Lin, T.-H.

    1996-12-01

    A two-dimensional interacting magnetic domains model is examined to explain the colossal magnetoresistance (CMR) recently observed in manganese-oxides. Electrons transport properties were studied by using Landauer's multichannel transport theory and recursive Green's function technique. Colossal magnetoresistance shows up in this system. The temperature dependence of system's MR is also studied.

  7. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    PubMed Central

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-01-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2. PMID:27228908

  8. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    PubMed

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-01-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2. PMID:27228908

  9. Sign control of magnetoresistance through chemically engineered interfaces.

    PubMed

    Ciudad, David; Gobbi, Marco; Kinane, Christy J; Eich, Marius; Moodera, Jagadeesh S; Hueso, Luis E

    2014-12-01

    Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions. PMID:25339373

  10. Hall effect and magnetoresistivity in the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Haugland, E. J.; Alterovitz, S. A.

    1978-01-01

    The Hall coefficient and magnetoresistance of sputtered films of Cu(x)Mo6S8 and PbMo6S8 have been measured, as well as the magnetoresistance in sintered samples of the same materials. Assuming a single band model, net carrier densities and mean mobilities are determined

  11. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    NASA Astrophysics Data System (ADS)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  12. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    PubMed

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-01-01

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices. PMID:25222696

  13. Magnetoresistance in single crystalline chromium sulfides

    NASA Astrophysics Data System (ADS)

    Lee, K. D.; Won, C. J.; Song, K. M.; Hur, N.

    2011-03-01

    We studied the anisotropic magnetic and magnetotransport properties of Cr2S3 single crystals grown by using the vapor transport method. Large magnetoresistance of ˜ 46% was observed in 9 T magnetic field applied perpendicular to the c axis near the Néel temperature TN ≈ 118 K. Comparison of electric and magnetic properties of Cr2S3 crystals with different sulfur deficiencies suggested that the electron doping by the sulfur deficiency does not contribute to weak ferromagnetism. The correlation between the field-dependent magnetization and resistivity was analyzed by the polaron hopping model of magnetotransport in Cr2S3.

  14. Giant magnetoresistance in organic spin valves

    SciTech Connect

    Sun, Da-Li; Yin, Lifeng; Sun, Chengjun; Guo, Hangwen; Gai, Zheng; Zhang, Xiaoguang; Ward, Thomas Z; Cheng, Zhaohua; Shen, Jian

    2010-01-01

    Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to {approx}300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

  15. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  16. Giant magnetoresistance in bilayer graphene nanoflakes

    NASA Astrophysics Data System (ADS)

    Farghadan, Rouhollah; Farekiyan, Marzieh

    2016-09-01

    Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 100%. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

  17. Magnetoresistive nanosensors: controlling magnetism at the nanoscale.

    PubMed

    Leitao, Diana C; Silva, Ana V; Paz, Elvira; Ferreira, Ricardo; Cardoso, Susana; Freitas, Paulo P

    2016-01-29

    The ability to detect the magnetic fields that surround us has promoted vast technological advances in sensing techniques. Among those, magnetoresistive sensors display an unpaired spatial resolution. Here, we successfully control the linear range of nanometric sensors using an interfacial exchange bias sensing layer coupling. An effective matching of material properties and sensor geometry improves the nanosensor performance, with top sensitivities of 3.7% mT(-1). The experimental results are well supported by 3D micromagnetic and magneto-transport simulations. PMID:26658286

  18. Magnetoresistive nanosensors: controlling magnetism at the nanoscale

    NASA Astrophysics Data System (ADS)

    Leitao, Diana C.; Silva, Ana V.; Paz, Elvira; Ferreira, Ricardo; Cardoso, Susana; Freitas, Paulo P.

    2016-01-01

    The ability to detect the magnetic fields that surround us has promoted vast technological advances in sensing techniques. Among those, magnetoresistive sensors display an unpaired spatial resolution. Here, we successfully control the linear range of nanometric sensors using an interfacial exchange bias sensing layer coupling. An effective matching of material properties and sensor geometry improves the nanosensor performance, with top sensitivities of 3.7% mT-1. The experimental results are well supported by 3D micromagnetic and magneto-transport simulations.

  19. Magnetoresistance reversal in antiperovskite compound Mn{sub 3}Cu{sub 0.5}Zn{sub 0.5}N

    SciTech Connect

    Zhang, X. H.; Yin, Y.; Yuan, Q.; Han, J. C.; Zhang, Z. H.; Jian, J. K.; Zhao, J. G. E-mail: songbo@hit.edu.cn; Song, B. E-mail: songbo@hit.edu.cn

    2014-03-28

    We report detailed investigations of the structure, magnetic properties, electronic transport, and specific heat in Mn-based antiperovskite compounds Mn{sub 3}Cu{sub 0.5}Zn{sub 0.5}N. Most strikingly, there are several fascinating features: (i) The magnetoresistance at 30 kOe (40 kOe) exceeds ∼1% (∼2%) over a temperature span of ∼70 K (∼25 K) from 5 to 140 K; (ii) magnetoresistance fluctuates at temperatures of 100–200 K, including an obvious sign reversal from negative to positive at ∼140 K. Analysis of the specific heat reveals that the magnetoresistance reversal may originate from the reconstruction of the Fermi surface accompanying an antiferromagnetic-ferromagnetic transition.

  20. Resistance switching memory in perovskite oxides

    SciTech Connect

    Yan, Z.B. Liu, J.-M.

    2015-07-15

    The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given.

  1. Spin Seebeck measurements of current-induced switching in YIG

    NASA Astrophysics Data System (ADS)

    Bartell, Jason; Jermain, Colin; Aradhya, Sriharsha; Wang, Hailong; Buhrman, Robert; Yang, Fengyuan; Ralph, Daniel; Fuchs, Gregory

    Quantifying spin torques generated at the interface between a normal metal (NM) and a ferromagnetic insulator (FI) is an important step in understanding the spin hall effect without charge transport. Measuring magnetization in NM/FI devices is challenging, however, because both magnetoresistive and magneto-optical signals are tiny in thin-film bilayers. We show that a promising alternative measurement approach is the use of picosecond thermal gradients to study spin torques in Pt/Yttrium Iron Garnet (YIG) bilayers. Recently, we demonstrated the application of heat to stroboscopically transduce a local magnetic moment into an electrical signal via the time resolved anomalous Nernst effect (TRANE) in ferromagnetic metals. Using a similar geometry the spin Seebeck effect of YIG combined with the inverse spin Hall effect of Pt enables measurement of local magnetization. Here we describe our study using this technique to study current-induced switching in Pt/YIG with sub-10 nm thick YIG films We acknowledge support from AFOSR.

  2. Advanced giant magnetoresistance technology for measurement applications

    NASA Astrophysics Data System (ADS)

    Weiss, Roland; Mattheis, Roland; Reiss, Günter

    2013-08-01

    Giant magnetoresistance (GMR) sensors are considered one of the first real applications of nanotechnology. They consist of nm-thick layered structures where ferromagnetic metals are sandwiched by nonmagnetic metals. Such multilayered films produce a large change in resistance (typically 10 to 20%) when subjected to a magnetic field, compared with a maximum change of a few per cent for other types of magnetic sensors. This technology has been intensively used in read heads for hard disk drives and now increasingly finds applications due to the high sensitivity and signal-to-noise ratio. Additionally these sensors are compatible with miniaturization and thus offer a high spatial resolution combined with a frequency range up to the 100 MHz regime and simple electronic conditioning. In this review, we first discuss the basics of the underlying magnetoresistance effects in layered structures and then present three prominent examples for future applications: in the field of current sensing the new GMR sensors offer high bandwidth and good accuracy in a space-saving open loop measurement configuration. In rotating systems they can be used for multiturn angle measurements, and in biotechnology the detection of magnetic particles enables the quantitative measurement of biomolecule concentrations.

  3. Nonlocal Magnetoresistance Mediated by Spin Superfluidity

    NASA Astrophysics Data System (ADS)

    Takei, So; Tserkovnyak, Yaroslav

    2015-10-01

    The electrical response of two diffusive metals is studied when they are linked by a magnetic insulator hosting a topologically stable (superfluid) spin current. We discuss how charge currents in the metals induce a spin supercurrent state, which in turn generates a magnetoresistance that depends on the topology of the electrical circuit. This magnetoresistance relies on phase coherence over the entire magnet and gives direct evidence for spin superfluidity. We show that driving the magnet with an ac current allows coherent spin transport even in the presence of U(1)-breaking magnetic anisotropy that can preclude dc superfluid transport. Spin transmission in the ac regime shows a series of resonance peaks as a function of frequency. The peak locations, heights, and widths can be used to extract static interfacial properties, e.g., the spin-mixing conductance and effective spin Hall angle, and to probe dynamic properties such as the spin-wave dispersion. Thus, ac transport may provide a simpler route to realizing nonequilbrium coherent spin transport and a useful way to characterize the magnetic system, serving as a precursor to the realization of dc superfluid spin transport.

  4. Magnetoresistive Flux Focusing Eddy Current Flaw Detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil s longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multi-layer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  5. Linearization strategies for high sensitivity magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Silva, Ana V.; Leitao, Diana C.; Valadeiro, João; Amaral, José; Freitas, Paulo P.; Cardoso, Susana

    2015-10-01

    Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ˜40 pT/√Hz at 30 Hz, representing a step forward the low field detection at room temperature.

  6. Magnetoresistive flux focusing eddy current flaw detection

    NASA Technical Reports Server (NTRS)

    Wincheski, Russell A. (Inventor); Namkung, Min (Inventor); Simpson, John W. (Inventor)

    2005-01-01

    A giant magnetoresistive flux focusing eddy current device effectively detects deep flaws in thick multilayer conductive materials. The probe uses an excitation coil to induce eddy currents in conducting material perpendicularly oriented to the coil's longitudinal axis. A giant magnetoresistive (GMR) sensor, surrounded by the excitation coil, is used to detect generated fields. Between the excitation coil and GMR sensor is a highly permeable flux focusing lens which magnetically separates the GMR sensor and excitation coil and produces high flux density at the outer edge of the GMR sensor. The use of feedback inside the flux focusing lens enables complete cancellation of the leakage fields at the GMR sensor location and biasing of the GMR sensor to a location of high magnetic field sensitivity. In an alternate embodiment, a permanent magnet is positioned adjacent to the GMR sensor to accomplish the biasing. Experimental results have demonstrated identification of flaws up to 1 cm deep in aluminum alloy structures. To detect deep flaws about circular fasteners or inhomogeneities in thick multilayer conductive materials, the device is mounted in a hand-held rotating probe assembly that is connected to a computer for system control, data acquisition, processing and storage.

  7. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    SciTech Connect

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L. Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  8. Non-local magnetoresistance in YIG/Pt nanostructures

    SciTech Connect

    Goennenwein, Sebastian T. B. Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans; Schlitz, Richard; Ganzhorn, Kathrin; Althammer, Matthias

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  9. Optical switches and switching methods

    DOEpatents

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  10. Magnetic behavior of Eu(3)Ni(4)Ga(4): antiferromagnetic order and large magnetoresistance.

    PubMed

    Anupam; Geibel, C; Hossain, Z

    2012-08-15

    The results of the magnetic susceptibility, isothermal magnetization, heat capacity, electrical resistivity and magnetoresistance measurements on polycrystalline Eu(3)Ni(4)Ga(4) are presented. Eu(3)Ni(4)Ga(4) forms in Na(3)Pt(4)Ge(4)-type cubic crystal structure (space group [Formula: see text]). The temperature dependence of the magnetic susceptibility of Eu(3)Ni(4)Ga(4) confirms the divalent state (Eu(2+)) of Eu ions with an effective magnetic moment μ(eff) = 7.98 μ(B). At low fields, e.g. at 0.01 T, a magnetic phase transition to an antiferromagnetically ordered state occurs at T(N) = 10.9 K, which is further confirmed by the temperature dependence of the heat capacity and electrical resistivity. The field dependence of isothermal magnetization at 2 K reveals the presence of two field induced metamagnetic transitions at H(c1) and H(c2) = 0.55 and 1.2 T, respectively and a polarized phase above H(PO) = 1.7 T. The reduced jump in the heat capacity at the transition temperature, ΔC|(T(N)) = 13.48 J/mol-Eu K would indicate an amplitude modulated (AM) antiferromagnetic structure. An interesting feature is that a large negative magnetoresistance, MR = [ρ(H) - ρ(0)]/ρ(0), is observed in the vicinity of magnetic transition even up to 2T(N). Similar large magnetoresistance has been observed in the paramagnetic state in some Gd and Eu based alloys and has been attributed to the magneto-polaronic effect. PMID:22785157

  11. Magnetoresistance in magnetic and nonmagnetic rare earth compounds

    NASA Astrophysics Data System (ADS)

    Gratz, E.; Maikis, M.; Bauer, E.; Nowotny, H.

    1995-02-01

    The temperature dependence of the magnetoresistance Δρ/ ρ of selected magnetic and nonmagnetic RE compounds in fields up to 10 T has been measured. The discussion of the positive magnetoresistance is based on Kohler's rule. It was found that deviations from Kohler's rule at low temperatures depend on the magnitude of the individual residual resistivity. Ferromagnetic compounds exhibit negative values and a minimum in the vicinity of the Curie temperature in accordance to a model calculation of Yamada and Takada. The positive Δρ/ ρ contribution in the low temperature region, observed in all magnetic compounds, is due to the dominating classical magnetoresistance in this temperature range.

  12. Electronic structure basis for the extraordinary magnetoresistance in WTe2.

    PubMed

    Pletikosić, I; Ali, Mazhar N; Fedorov, A V; Cava, R J; Valla, T

    2014-11-21

    The electronic structure basis of the extremely large magnetoresistance in layered nonmagnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at low temperatures, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe2 was identified. PMID:25479512

  13. Electronic Structure Basis for the Extraordinary Magnetoresistance in WTe2

    NASA Astrophysics Data System (ADS)

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; Cava, R. J.; Valla, T.

    2014-11-01

    The electronic structure basis of the extremely large magnetoresistance in layered nonmagnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at low temperatures, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe2 was identified.

  14. Anisotropic magnetoresistance dominant in a three terminal Hanle measurement

    NASA Astrophysics Data System (ADS)

    Malec, Christopher; Miller, Michael M.; Johnson, Mark

    2016-02-01

    Experiments are performed on mesoscopic nonlocal lateral spin valves with aluminum channels and Permalloy electrodes. Four-terminal magnetoresistance and Hanle measurements characterize the spin accumulation with results that compare well with published work. Three-terminal Hanle measurements of the Permalloy/aluminum (Py/Al) interfaces show bell-shaped curves that can be fit to Lorentzians. These curves are three orders of magnitude larger than the spin accumulation. Using anisotropic magnetoresistance measurements of individual Permalloy electrodes, we demonstrate that the three-terminal measurements are dominated by anisotropic magnetoresistance effects unrelated to spin accumulation.

  15. Femtosecond switching of magnetism via strongly correlated spin-charge quantum excitations.

    PubMed

    Li, Tianqi; Patz, Aaron; Mouchliadis, Leonidas; Yan, Jiaqiang; Lograsso, Thomas A; Perakis, Ilias E; Wang, Jigang

    2013-04-01

    The technological demand to push the gigahertz (10(9) hertz) switching speed limit of today's magnetic memory and logic devices into the terahertz (10(12) hertz) regime underlies the entire field of spin-electronics and integrated multi-functional devices. This challenge is met by all-optical magnetic switching based on coherent spin manipulation. By analogy to femtosecond chemistry and photosynthetic dynamics--in which photoproducts of chemical and biochemical reactions can be influenced by creating suitable superpositions of molecular states--femtosecond-laser-excited coherence between electronic states can switch magnetic order by 'suddenly' breaking the delicate balance between competing phases of correlated materials: for example, manganites exhibiting colossal magneto-resistance suitable for applications. Here we show femtosecond (10(-15) seconds) photo-induced switching from antiferromagnetic to ferromagnetic ordering in Pr0.7Ca0.3MnO3, by observing the establishment (within about 120 femtoseconds) of a huge temperature-dependent magnetization with photo-excitation threshold behaviour absent in the optical reflectivity. The development of ferromagnetic correlations during the femtosecond laser pulse reveals an initial quantum coherent regime of magnetism, distinguished from the picosecond (10(-12) seconds) lattice-heating regime characterized by phase separation without threshold behaviour. Our simulations reproduce the nonlinear femtosecond spin generation and underpin fast quantum spin-flip fluctuations correlated with coherent superpositions of electronic states to initiate local ferromagnetic correlations. These results merge two fields, femtosecond magnetism in metals and band insulators, and non-equilibrium phase transitions of strongly correlated electrons, in which local interactions exceeding the kinetic energy produce a complex balance of competing orders. PMID:23552945

  16. Permalloy and Co50Pd50 as ferromagnetic contacts for magnetoresistance measurements in carbon nanotube-based transport structures

    NASA Astrophysics Data System (ADS)

    Morgan, Caitlin; Schneider, Claus M.; Meyer, Carola

    2012-04-01

    In this paper, magnetoresistance (MR) measurements on carbon nanotube (CNT) 2-terminal spin-valve devices are presented. Results from samples with both permalloy (Py) and CoPd contacts show repeatable MR switching. In performing gate-dependent MR measurements on the Py-contacted CNTs, two distinct transport regimes are identified, and their transport behavior is discussed with respect to optimizing MR. Results from the first CoPd-contacted CNTs indicate a stable magnetic response with a higher magnitude than that of a Py-contacted nanotube in the same transport regime.

  17. FAST ACTING CURRENT SWITCH

    DOEpatents

    Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

    1962-05-22

    A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

  18. Low field magnetoresistance of gadolinium nanowire

    SciTech Connect

    Chakravorty, Manotosh Raychaudhuri, A. K.

    2014-02-07

    We report low field (μ{sub 0}H < 0.2 T) magnetoresistance (MR) studies on a single Gd nanowire patterned from a nano-structured film (average grain size ∼ 35 nm) by focused ion beam. For comparison, we did similar MR measurements on a polycrystalline sample with large crystallographic grains (∼4 μm). It is observed that in the low field region where the MR is due to motion of magnetic domains, the MR in the large grained sample shows a close relation to the characteristic temperature dependent magnetocrystalline anisotropy including a sharp rise in MR at the spin reorientation transition at 235 K. In stark contrast, in the nanowire, the MR shows complete suppression of the above behaviours and it shows predominance of the grain boundary and spin disorder controlling the domain response.

  19. Magnetocardiography with sensors based on giant magnetoresistance

    NASA Astrophysics Data System (ADS)

    Pannetier-Lecoeur, M.; Parkkonen, L.; Sergeeva-Chollet, N.; Polovy, H.; Fermon, C.; Fowley, C.

    2011-04-01

    Biomagnetic signals, mostly due to the electrical activity in the body, are very weak and they can only be detected by the most sensitive magnetometers, such as Superconducting Quantum Interference Devices (SQUIDs). We report here biomagnetic recordings with hybrid sensors based on Giant MagnetoResistance (GMR). We recorded magnetic signatures of the electric activity of the human heart (magnetocardiography) in healthy volunteers. The P-wave and QRS complex, known from the corresponding electric recordings, are clearly visible in the recordings after an averaging time of about 1 min. Multiple recordings at different locations over the chest yielded a dipolar magnetic field map and allowed localizing the underlying current sources. The sensitivity of the GMR-based sensors is now approaching that of SQUIDs and paves way for spin electronics devices for functional imaging of the body.

  20. Magnetoresistance of an Anderson insulator of bosons.

    PubMed

    Gangopadhyay, Anirban; Galitski, Victor; Müller, Markus

    2013-07-12

    We study the magnetoresistance of two-dimensional bosonic Anderson insulators. We describe the change in spatial decay of localized excitations in response to a magnetic field, which is given by an interference sum over alternative tunneling trajectories. The excitations become more localized with increasing field (in sharp contrast to generic fermionic excitations which get weakly delocalized): the localization length ξ(B) is found to change as ξ(-1)(B)-ξ(-1)(0)~B(4/5). The quantum interference problem maps onto the classical statistical mechanics of directed polymers in random media (DPRM). We explain the observed scaling using a simplified droplet model which incorporates the nontrivial DPRM exponents. Our results have implications for a variety of experiments on magnetic-field-tuned superconductor-to-insulator transitions observed in disordered films, granular superconductors, and Josephson junction arrays, as well as for cold atoms in artificial gauge fields. PMID:23889427

  1. Nonlocal ordinary magnetoresistance in indium arsenide

    NASA Astrophysics Data System (ADS)

    Liu, Pan.; Yuan, Zhonghui.; Wu, Hao.; Ali, S. S.; Wan, Caihua.; Ban, Shiliang.

    2015-07-01

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T-1 to 45.3 T-1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure.

  2. Magnetoresistance and localization in bosonic insulators

    NASA Astrophysics Data System (ADS)

    Müller, Markus

    2013-06-01

    We study the strong localization of hard-core bosons. Using a locator expansion we find that in the insulator, unlike for typical fermion problems, nearly all low-energy scattering paths come with positive amplitudes and hence interfere constructively. As a consequence, the localization length of bosonic excitations shrinks when the constructive interference is suppressed by a magnetic field, entailing an exponentially large positive magnetoresistance, opposite to and significantly stronger than the analogous effect in fermions. Within the forward-scattering approximation, we find that the lowest-energy excitations are the most delocalized. A similar analysis applied to random field Ising models suggests that the ordering transition is due to a delocalization initiated at zero energy rather than due to the closure of a mobility gap in the paramagnet.

  3. Giant Magnetoresistive Sensors for DNA Microarray

    PubMed Central

    Xu, Liang; Yu, Heng; Han, Shu-Jen; Osterfeld, Sebastian; White, Robert L.; Pourmand, Nader; Wang, Shan X.

    2009-01-01

    Giant magnetoresistive (GMR) sensors are developed for a DNA microarray. Compared with the conventional fluorescent sensors, GMR sensors are cheaper, more sensitive, can generate fully electronic signals, and can be easily integrated with electronics and microfluidics. The GMR sensor used in this work has a bottom spin valve structure with an MR ratio of 12%. The single-strand target DNA detected has a length of 20 bases. Assays with DNA concentrations down to 10 pM were performed, with a dynamic range of 3 logs. A double modulation technique was used in signal detection to reduce the 1/f noise in the sensor while circumventing electromagnetic interference. The logarithmic relationship between the magnetic signal and the target DNA concentration can be described by the Temkin isotherm. Furthermore, GMR sensors integrated with microfluidics has great potential of improving the sensitivity to 1 pM or below, and the total assay time can be reduced to less than 1 hour. PMID:20824116

  4. Spin Hall Magnetoresistance in Metallic Bilayers

    NASA Astrophysics Data System (ADS)

    Kim, Junyeon; Sheng, Peng; Takahashi, Saburo; Mitani, Seiji; Hayashi, Masamitsu

    2016-03-01

    Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in W /CoFeB compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM /FM interface.

  5. Anomalous magnetoresistance in magnetized topological insulator cylinders

    SciTech Connect

    Siu, Zhuo Bin; Jalil, Mansoor B. A.

    2015-05-07

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  6. Fabrication and characterization of magnetotransport in colossal magnetoresistive manganite thin films and hybrid structures

    NASA Astrophysics Data System (ADS)

    Pietambaram, Srinivas V.

    The continually increasing demand for magnetic information storage and retrieval has driven a significant worldwide effort to improve the performance of relevant hard ware components. As the areal density continues to increase, more sensitive materials and innovative structures will be required to detect the decreasing fringe fields emanating from the media. Doped manganites in thin film form are being examined as a possible next generation magnetoresistance sensor material. The magnetoresistance of these doped manganite thin films is of unprecedented magnitude; however, these large resistance changes are achieved only in a strong field in the Tesla range, thus severely limiting their practical utility. This dissertation addresses some of the critical parameters, which influence the properties and efforts to reduce the field scale necessary to observe high magnetoresistance ratios in these films. The primary deposition technique used in this work is pulsed laser deposition. Initial work was concentrated on the optimization of various process parameters to obtain high quality thin films of manganites. Systematic post deposition heat treatments in oxygen and argon ambient at elevated temperatures revealed that transition temperature is related to the Mn-O fraction and uniform distribution of oxygen across the films rather than just the oxygen content of the films as proposed by others. MR ratio is improved by the improvement in the microstructure (recrystallization and grain growth) of the films after annealing; however vacancies created on the lanthanum site by the high temperature anneal also seem to be an important factor in the determination of the MR ratio. Self-doped, mixed doped and external doped lanthanum manganite thin films, where the external dopant is Ca, have shown different transition temperature and MR ratios. The variation in the insulator-to-metal transition could be explained on the basis of Mn4+ content while the MR property seemed to be related

  7. ION SWITCH

    DOEpatents

    Cook, B.

    1959-02-10

    An ion switch capable of transferring large magnitudes of power is described. An ion switch constructed in accordance with the invention includes a pair of spaced control electrodes disposed in a highly evacuated region for connection in a conventional circuit to control the passing of power therethrough. A controllable ionic conduction path is provided directiy between the control electrodes by a source unit to close the ion switch. Conventional power supply means are provided to trigger the source unit and control the magnitude, durations and pulse repetition rate of the aforementioned ionic conduction path.

  8. Recent Developments of Magnetoresistive Sensors for Industrial Applications

    PubMed Central

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-01-01

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

  9. Recent Developments of Magnetoresistive Sensors for Industrial Applications.

    PubMed

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-01-01

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling). PMID:26569263

  10. The suppression of the large magnetoresistance in thin WTe2

    NASA Astrophysics Data System (ADS)

    Shen, Jie; Woods, John; Cha, Judy

    The layered nature of WTe2 suggests the possibility of making a single layer WTe2 memory device that exploits the recently observed large magnetoresistance. Presently, the origin of the magnetoresistance is attributed to the charge balance between the electron and hole carriers, yet the exact underlying physical mechanism is unclear. Here we show a systematic suppression of the large magnetoresistance, as well as turn-on temperature, with decreasing thickness of WTe2. We attribute the thickness-dependent transport properties to undesirable parasitic effects that become dominant in thin films of WTe2. Our results highlight the increasing importance of characterizing the parasitic effects for 2D layered materials in a single- to a few-layer thick limit. Finally, our observations support the hypothesis that the origin of the large magnetoresistance may be due to the charge balance between the electron and the hole carriers.

  11. Chiral anomaly and classical negative magnetoresistance of Weyl metals

    NASA Astrophysics Data System (ADS)

    Son, D. T.; Spivak, B. Z.

    2013-09-01

    We consider the classical magnetoresistance of a Weyl metal in which the electron Fermi surface possesses nonzero fluxes of the Berry curvature. Such a system may exhibit large negative magnetoresistance with unusual anisotropy as a function of the angle between the electric and magnetic fields. In this case the system can support an additional type of plasma wave. These phenomena are consequences of the chiral anomaly in electron transport theory.

  12. Giant negative magnetoresistance in Manganese-substituted Zinc Oxide

    PubMed Central

    Wang, X. L.; Shao, Q.; Zhuravlyova, A.; He, M.; Yi, Y.; Lortz, R.; Wang, J. N.; Ruotolo, A.

    2015-01-01

    We report a large negative magnetoresistance in Manganese-substituted Zinc Oxide thin films. This anomalous effect was found to appear in oxygen-deficient films and to increase with the concentration of Manganese. By combining magnetoresistive measurements with magneto-photoluminescence, we demonstrate that the effect can be explained as the result of a magnetically induced transition from hopping to band conduction where the activation energy is caused by the sp-d exchange interaction. PMID:25783664

  13. Acceleration switch

    DOEpatents

    Abbin, J.P. Jr.; Devaney, H.F.; Hake, L.W.

    1979-08-29

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  14. Acceleration switch

    DOEpatents

    Abbin, Jr., Joseph P.; Devaney, Howard F.; Hake, Lewis W.

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  15. Large, non-saturating magnetoresistance in WTe2.

    PubMed

    Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J

    2014-10-01

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity. PMID:25219849

  16. Large, non-saturating magnetoresistance in WTe2

    NASA Astrophysics Data System (ADS)

    Ali, Mazhar N.; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D.; Schoop, Leslie M.; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N. P.; Cava, R. J.

    2014-10-01

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  17. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    PubMed

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-01

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform. PMID:26561728

  18. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    PubMed Central

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-01-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice. PMID:27279139

  19. Magnetoresistive polyaniline-silicon carbide metacomposites: plasma frequency determination and high magnetic field sensitivity.

    PubMed

    Gu, Hongbo; Guo, Jiang; Khan, Mojammel Alam; Young, David P; Shen, T D; Wei, Suying; Guo, Zhanhu

    2016-07-20

    The Drude model modified by Debye relaxation time was introduced to determine the plasma frequency (ωp) in the surface initiated polymerization (SIP) synthesized β-silicon carbide (β-SiC)/polyaniline (PANI) metacomposites. The calculated plasma frequency for these metacomposites with different loadings of β-SiC nanoparticles was ranging from 6.11 × 10(4) to 1.53 × 10(5) rad s(-1). The relationship between the negative permittivity and plasma frequency indicates the existence of switching frequency, at which the permittivity was changed from negative to positive. More interestingly, the synthesized non-magnetic metacomposites, observed to follow the 3-dimensional (3-D) Mott variable range hopping (VRH) electrical conduction mechanism, demonstrated high positive magnetoresistance (MR) values of up to 57.48% and high MR sensitivity at low magnetic field regimes. PMID:27386820

  20. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-06-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice.

  1. Soft magnetic lithography and giant magnetoresistance in superconducting/ferromagnetic hybrids.

    SciTech Connect

    Vlasko-Vlasov, V.; Welp, U.; Imre, A.; Rosenmann, D.; Pearson, J.; Kwok, W. K.

    2008-01-01

    We demonstrate an approach to create a tunable pinning potential in a superconducting/ferromagnetic (SC/FM) hybrid, allowing the switching of their electronic properties through the application of a small magnetic field. Using direct magneto-optical imaging, macroscopic transport, and magnetic measurements, we show that the alignment of stripe domains in the ferromagnet provides a remarkable directionality for the superconducting vortex motion. An analysis of the anisotropic flux motion demonstrates a substantial critical current anisotropy in the superconductor. The possibility of aligning stable lattices of stripe domains in select directions using in-plane magnetic fields allows the realization of soft magnetic lithography for efficient manipulation of supercurrent flow in SC/FM bilayers. Furthermore, in our samples we observed a pronounced magnetoresistance effect yielding 4 orders of magnitude resistivity change in a few millitesla in-plane field.

  2. Optimization of magnetoresistive sensor current for on-chip magnetic bead detection using the sensor self-field

    NASA Astrophysics Data System (ADS)

    Henriksen, Anders Dahl; Rizzi, Giovanni; Østerberg, Frederik Westergaard; Hansen, Mikkel Fougt

    2015-04-01

    We investigate the self-heating of magnetoresistive sensors used for measurements on magnetic beads in magnetic biosensors. The signal from magnetic beads magnetized by the field due to the sensor bias current is proportional to the bias current squared. Therefore, we aim to maximize the bias current while limiting the sensor self-heating. We systematically characterize and model the Joule heating of magnetoresistive sensors with different sensor geometries and stack compositions. The sensor heating is determined using the increase of the sensor resistance as function of the bias current. The measured temperature increase is in good agreement with a finite element model and a simple analytical thermal model. The heat conductance of our system is limited by the 1 μm thick electrically insulating silicon dioxide layer between the sensor stack and the underlying silicon wafer, thus the heat conductance is proportional to the sensor area and inversely proportional to the oxide thickness. This simple heat conductance determines the relationship between bias current and sensor temperature, and we show that 25 μm wide sensor on a 1 μm oxide can sustain a bias current of 30 mA for an allowed temperature increase of 5 °C. The method and models used are generally applicable for thin film sensor systems. Further, the consequences for biosensor applications of the present sensor designs and the impact on future sensor designs are discussed.

  3. A theoretical study of magnetoelectronic and switching properties of molecular magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Soti, V.; Ravan, B. Abedi

    2016-01-01

    Electronic transport and switching properties of molecule-based magnetic tunnel junctions are investigated using the first-principles density functional theory and non-equilibrium Green function methods. As a result of being sandwiched between the ferromagnetic electrodes, a spin-polarization is induced in the nonmagnetic organic atoms. Magnitudes of the spin-polarizations in the trans-polyacetylene, cis-polyacetylene, terphenyl and pentacene chains are calculated and it is suggested that among these the pentacene molecules, because of showing a relatively higher magnetization can theoretically be more appropriate for utilization in spintronic devices. Furthermore, electrical switching capabilities of the junctions are studied and the results reveal that the pentacene junction due to having a larger ON/OFF ratio shows a better switching behavior. Finally, magnetoresistive properties are studied and it is shown that applying torsion can be an effective method to enhance and also adjust magnitudes of the magnetoresistances of the junctions.

  4. Resistivity dependence of magnetoresistance in Co/ZnO films

    PubMed Central

    2014-01-01

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm < ρ < 0.5 Ω · cm, the conduction contains two channels: the spin-dependent tunneling channel and the spin-independent second-order hopping (N = 2). The former gives rise to a high room-temperature magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ < 0.08 Ω · cm, reduced magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices. PMID:24393445

  5. Effects of Cigarette Smoke, Cessation, and Switching to Two Heat-Not-Burn Tobacco Products on Lung Lipid Metabolism in C57BL/6 and Apoe−/− Mice—An Integrative Systems Toxicology Analysis

    PubMed Central

    Boué, Stéphanie; Phillips, Blaine; Talikka, Marja; Vihervaara, Terhi; Schneider, Thomas; Nury, Catherine; Elamin, Ashraf; Guedj, Emmanuel; Peck, Michael J.; Schlage, Walter K.; Cabanski, Maciej; Leroy, Patrice; Vuillaume, Gregory; Martin, Florian; Ivanov, Nikolai V.; Veljkovic, Emilija; Ekroos, Kim; Laaksonen, Reijo; Vanscheeuwijck, Patrick; Peitsch, Manuel C.; Hoeng, Julia

    2016-01-01

    The impact of cigarette smoke (CS), a major cause of lung diseases, on the composition and metabolism of lung lipids is incompletely understood. Here, we integrated quantitative lipidomics and proteomics to investigate exposure effects on lung lipid metabolism in a C57BL/6 and an Apolipoprotein E-deficient (Apoe−/−) mouse study. In these studies, mice were exposed to high concentrations of 3R4F reference CS, aerosol from potential modified risk tobacco products (MRTPs) or filtered air (Sham) for up to 8 months. The 2 assessed MRTPs, the prototypical MRTP for C57BL/6 mice and the Tobacco Heating System 2.2 for Apoe−/− mice, utilize “heat-not-burn” technologies and were each matched in nicotine concentrations to the 3R4F CS. After 2 months of CS exposure, some groups were either switched to the MRTP or underwent cessation. In both mouse strains, CS strongly affected several categories of lung lipids and lipid-related proteins. Candidate surfactant lipids, surfactant proteins, and surfactant metabolizing proteins were increased. Inflammatory eicosanoids, their metabolic enzymes, and several ceramide classes were elevated. Overall, CS induced a coordinated lipid response controlled by transcription regulators such as SREBP proteins and supported by other metabolic adaptations. In contrast, most of these changes were absent in the mice exposed to the potential MRTPs, in the cessation group, and the switching group. Our findings demonstrate the complex biological response of the lungs to CS exposure and support the benefits of cessation or switching to a heat-not-burn product using a design such as those employed in this study. PMID:26582801

  6. Effects of Cigarette Smoke, Cessation, and Switching to Two Heat-Not-Burn Tobacco Products on Lung Lipid Metabolism in C57BL/6 and Apoe-/- Mice-An Integrative Systems Toxicology Analysis.

    PubMed

    Titz, Bjoern; Boué, Stéphanie; Phillips, Blaine; Talikka, Marja; Vihervaara, Terhi; Schneider, Thomas; Nury, Catherine; Elamin, Ashraf; Guedj, Emmanuel; Peck, Michael J; Schlage, Walter K; Cabanski, Maciej; Leroy, Patrice; Vuillaume, Gregory; Martin, Florian; Ivanov, Nikolai V; Veljkovic, Emilija; Ekroos, Kim; Laaksonen, Reijo; Vanscheeuwijck, Patrick; Peitsch, Manuel C; Hoeng, Julia

    2016-02-01

    The impact of cigarette smoke (CS), a major cause of lung diseases, on the composition and metabolism of lung lipids is incompletely understood. Here, we integrated quantitative lipidomics and proteomics to investigate exposure effects on lung lipid metabolism in a C57BL/6 and an Apolipoprotein E-deficient (Apoe(-/-)) mouse study. In these studies, mice were exposed to high concentrations of 3R4F reference CS, aerosol from potential modified risk tobacco products (MRTPs) or filtered air (Sham) for up to 8 months. The 2 assessed MRTPs, the prototypical MRTP for C57BL/6 mice and the Tobacco Heating System 2.2 for Apoe(-/-) mice, utilize "heat-not-burn" technologies and were each matched in nicotine concentrations to the 3R4F CS. After 2 months of CS exposure, some groups were either switched to the MRTP or underwent cessation. In both mouse strains, CS strongly affected several categories of lung lipids and lipid-related proteins. Candidate surfactant lipids, surfactant proteins, and surfactant metabolizing proteins were increased. Inflammatory eicosanoids, their metabolic enzymes, and several ceramide classes were elevated. Overall, CS induced a coordinated lipid response controlled by transcription regulators such as SREBP proteins and supported by other metabolic adaptations. In contrast, most of these changes were absent in the mice exposed to the potential MRTPs, in the cessation group, and the switching group. Our findings demonstrate the complex biological response of the lungs to CS exposure and support the benefits of cessation or switching to a heat-not-burn product using a design such as those employed in this study. PMID:26582801

  7. Giant magnetoresistance of copper/permalloy multilayers

    NASA Astrophysics Data System (ADS)

    Holody, P.; Chiang, W. C.; Loloee, R.; Bass, J.; Pratt, W. P., Jr.; Schroeder, P. A.

    1998-11-01

    Current perpendicular (CPP) and current in-plane (CIP) magnetoresistances (MR) have been measured on sputtered Cu/Py (Py=Permalloy) multilayers at 4.2 K. The CPP-MR is several times larger than the CIP-MR. For fixed Py layer thickness, tPy=1.5 nm, both the CPP and CIP MR's show oscillations with increasing tCu with a period similar to that previously reported for the CIP-MR. The CPP data for Cu thicknesses large enough that exchange interactions between Py layers are small are analyzed using the two spin-current model for both infinite and finite spin-diffusion length in Py. The very low coercive field of Py leads to a larger than usual uncertainty in the derived parameters, because of the uncertainty in the degree of antiparallel alignment required for the analysis. Three alternative analyses give bulk and interface spin-dependent anisotropy parameters, β, and γ, of comparable size, so that both must be considered in determining the CPP-MR. Our preferred values, based upon an assumed IPysf=5.5+/-1 nm, are β=0.65+/-0.1 and γ=0.76+/-0.1. These values produce good fits to the CPP-MR's of Co/Cu/Py/Cu multilayers.

  8. Giant magnetoresistance materials for magnetic recording technology

    SciTech Connect

    Heffner, R.H.; Adams, C.D.; Brosha, E.L.

    1997-12-01

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). This work focused on a class of transition-metal-oxide (TMO) materials (LaMnO{sub 3} doped with Ca, Ba, or Sr) that exhibits an insulator-to-metal transition near a ferromagnetic phase transition temperature. This yields a very large magnetoresistance; thus these materials may have important uses as magnetic sensors in a variety of applications, ranging from automobiles to read heads for magnetic storage. In addition, the transport current in the ferromagnetic state is likely to be very highly polarized, which means that additional device applications using the phenomena of spin-polarized tunneling can be envisioned. Use of these materials as magnetic sensors depends upon learning to control the synthesis parameters (principally temperature, pressure and composition) to achieve a specific carrier concentration and/or mobility. A second challenge is the high magnetic fields ({ge}1 Tesla) currently required to achieve a large change in resistance. The authors began an investigation of two novel approaches to this field-sensitivity problem, involving the development of multilayer structures of the TMO materials. Finally, they began to explore the use of epitaxial strain as a means of changing the transport properties in thin-film multilayers.

  9. Colossal magnetoresistance in topological Kondo insulator

    NASA Astrophysics Data System (ADS)

    Slieptsov, Igor O.; Karnaukhov, Igor N.

    2016-04-01

    Abnormal electronic properties of complex systems require new ideas concerning explanation of their behavior and possibility of realization. In this acticle we show that a colossal magnetoresistance is realized in the state of the topological Kondo insulator, that is similar to the Kondo insulator state in the Kondo lattice. The mechanism of the phenomenon is the following: in the spin gapless phase an external magnetic field induces the gap in the spectrum of spin excitations, the gap in the spectrum of fermions is opened due to a hybridization between spin and fermion subsystems at half-filling, as the result the magnetic field leads to metal–insulator (or bad metal–insulator) phase transition. A model of the topological Kondo lattice defined on a honeycomb lattice is studied for the case when spinless fermion bands are half-filled. It is shown that the hybridization between local moments and itinerant fermions should be understood as the hybridization between corresponding Majorana fermions of the spin and charge sectors. The system is a topological insulator, single fermion and spin excitations at low energies are massive. We will show that a spin gap induces a gap in the charge channel, it leads to an appearance of a topological insulator state with chiral gapless edge modes and the Chern number one or two depending on the exchange integrals’ values. The relevance of this to the traditional Kondo insulator state is discussed.

  10. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    SciTech Connect

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  11. Spin Hall Magnetoresistance in Metallic Bilayers.

    PubMed

    Kim, Junyeon; Sheng, Peng; Takahashi, Saburo; Mitani, Seiji; Hayashi, Masamitsu

    2016-03-01

    Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in W/CoFeB compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the HM/FM interface. PMID:26991195

  12. Lateral flow immunoassay using magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Taton, Kristin; Johnson, Diane; Guire, Patrick; Lange, Erik; Tondra, Mark

    2009-05-01

    Magnetic particles have been adapted for use as labels in biochemical lateral flow strip tests. Standard gold particle lateral flow assays are generally qualitative; however, with magnetic particles, quantitative results can be obtained by using electronic detection systems with giant magnetoresistive (GMR) sensors. As described here, these small integrated sensor chips can detect the presence of magnetic labels in capture spots whose volume is approximately 150 μm×150 μm×150 μm. The range of linear detection is better than two orders of magnitude; the total range is up to four orders of magnitude. The system was demonstrated with both indirect and sandwich enzyme-linked immunosorbent assays (ELISAs) for protein detection of rabbit IgG and interferon-γ, respectively, achieving detection of 12 pg/ml protein. Ultimately, the goal is for the detector to be fully integrated into the lateral flow strip backing to form a single consumable item that is interrogated by a handheld electronic reader.

  13. Linear unsaturating magnetoresistance in disordered systems

    NASA Astrophysics Data System (ADS)

    Lai, Ying Tong; Lara, Silvia; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

    Theoretical works have shown that disordered systems exhibit classical magnetoresistance (MR). In this talk, we examine a variety of experimental systems that observe linear MR at high magnetic fields, including silver chalcogenides, graphene, graphite and Weyl semimetals. We show that a careful analysis of the magnitude of the MR, as well as the field strength at which the MR changes from quadratic to linear, reveal important properties of the system, such as the ratio of the root-mean-square fluctuations in the carrier density and the average carrier density. By looking at other properties such as the zero-field mobility, we show that this carrier density inhomogeneity is consistent with what is known about the microscopic impurities in these experiments. The application of this disorder-induced MR to a variety of different experimental scenarios underline the universality of these theoretical models. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

  14. Nodal Quasiparticle in Pseudogapped Colossal Magnetoresistive Manganites

    SciTech Connect

    Mannella, N.

    2010-06-02

    A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the d-wave symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite Fermi arcs. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.

  15. Noncontact vibration measurements using magnetoresistive sensing elements

    NASA Astrophysics Data System (ADS)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  16. Planar Hall magnetoresistive aptasensor for thrombin detection.

    PubMed

    Sinha, B; Ramulu, T S; Kim, K W; Venu, R; Lee, J J; Kim, C G

    2014-09-15

    The use of aptamer-based assays is an emerging and attractive approach in disease research and clinical diagnostics. A sensitive aptamer-based sandwich-type sensor is presented to detect human thrombin using a planar Hall magnetoresistive (PHR) sensor in cooperation with superparamagnetic labels. A PHR sensor has the great advantages of a high signal-to-noise ratio, a small offset voltage and linear response in the low-field region, allowing it to act as a high-resolution biosensor. In the system presented here, the sensor has an active area of 50 µm × 50 µm with a 10-nm gold layer deposited onto the sensor surface prior to the binding of thiolated DNA primary aptamer. A polydimethylsiloxane well of 600-µm radius and 1-mm height was prepared around the sensor surface to maintain the same specific area and volume for each sensor. The sensor response was traced in real time upon the addition of streptavidin-functionalized magnetic labels on the sensor. A linear response to the thrombin concentration in the range of 86 pM-8.6 µM and a lower detection limit down to 86 pM was achieved by the proposed present method with a sample volume consumption of 2 µl. The proposed aptasensor has a strong potential for application in clinical diagnosis. PMID:24727201

  17. Classical and quantum routes to linear magnetoresistance.

    PubMed

    Hu, Jingshi; Rosenbaum, T F

    2008-09-01

    The hallmark of materials science is the ability to tailor the microstructure of a given material to provide a desired response. Carbon mixed with iron provides the steel of buildings and bridges; impurities sprinkled in silicon single crystals form the raw materials of the electronics revolution; pinning centres in superconductors let them become powerful magnets. Here, we show that either adding a few parts per million of the proper chemical impurities to indium antimonide, a well-known semiconductor, or redesigning the material's structure on the micrometre scale, can transform its response to an applied magnetic field. The former approach is purely quantum mechanical; the latter a classical outgrowth of disorder, turned to advantage. In both cases, the magnetoresistive response--at the heart of magnetic sensor technology--can be converted to a simple, large and linear function of field that does not saturate. Harnessing the effects of disorder has the further advantage of extending the useful applications range of such a magnetic sensor to very high temperatures by circumventing the usual limitations imposed by phonon scattering. PMID:18719705

  18. Optical switch

    DOEpatents

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  19. Magnetoresistance of heavy and light metal/ferromagnet bilayers

    SciTech Connect

    Avci, Can Onur; Garello, Kevin; Mendil, Johannes; Ghosh, Abhijit; Blasakis, Nicolas; Gabureac, Mihai; Trassin, Morgan; Fiebig, Manfred; Gambardella, Pietro

    2015-11-09

    We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in the linear and nonlinear (current-dependent) regimes and compared it with the amplitude of the spin-orbit torques and thermally induced electric fields. Our experiments reveal that the magnetoresistance of the heavy NM/Co bilayers (NM = Ta, W, and Pt) is phenomenologically similar to the spin Hall magnetoresistance (SMR) of YIG/Pt, but has a much larger anisotropy of the order of 0.5%, which increases with the atomic number of the NM. This SMR-like behavior is absent in light NM/Co bilayers (NM = Ti and Cu), which present the standard anisotropic magnetoresistance expected from polycrystalline FM layers. In the Ta, W, and Pt/Co bilayers, we find an additional magnetoresistance directly proportional to the current and to the transverse component of the magnetization. This so-called unidirectional SMR, of the order of 0.005%, is largest in W and correlates with the amplitude of the antidamping spin-orbit torque. The unidirectional SMR is below the accuracy of our measurements in YIG/Pt.

  20. The Effects of Fringe Fields on Organic Magnetoresistance

    NASA Astrophysics Data System (ADS)

    Harmon, Nicholas; Macià, Ferran; Wang, Fujian; Wohlgenannt, Markus; Kent, Andrew; Flatté, Michael

    2013-03-01

    The importance of random hyperfine fields is now widely acknowledged as a vital ingredient for the phenomena of organic magnetoresistance (OMAR). Recent experiments (Phys. Rev. X 2 021013 (2012)) have shown that another type of random field - fringe fields due to a nearby ferromagnet - can also dramatically affect magnetoconductivity. A theoretical analysis of the fringe field OMAR is challenging due to the different properties of the fringe fields when compared to the hyperfine fields. For instance, the range of fringe field strengths is 1-2 orders of magnitude larger than that of the hyperfine couplings. The correlation length between fringe fields is also larger by the same degree. We use a recent theory of OMAR that is well-suited to numerically calculate the magnetoresistance with both hyperfine and fringe fields present. We find agreement with key features of experimental fringe-field magnetoresistance dependences on applied magnetic field, including the field values of extrema of the magnetoresistance, the region of large magnetoresistance effects from the fringe fields, and the sign of the effect. This work was supported by an ARO MURI.

  1. Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

    SciTech Connect

    Yamanoi, K.; Yokotani, Y.; Cui, X.; Yakata, S.; Kimura, T.

    2015-12-21

    We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of the standing spin wave is an important advantage for the high power operation of the spin-wave device.

  2. Effect of interface-induced exchange fields on cuprate-manganite spin switches.

    PubMed

    Liu, Yaohua; Visani, C; Nemes, N M; Fitzsimmons, M R; Zhu, L Y; Tornos, J; Garcia-Hernandez, M; Zhernenkov, M; Hoffmann, A; Leon, C; Santamaria, J; te Velthuis, S G E

    2012-05-18

    We examine the anomalous inverse spin switch behavior in La0.7Ca0.3MnO3(LCMO)/YBa2Cu3O7-δ (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizations is not sufficient to determine the magnetoresistance. Rather the field dependence of magnetoresistance is explained by the interplay between the applied magnetic field and the (exponential tail of the) induced exchange field in YBCO, the latter originating from the electronic reconstruction at the LCMO/YBCO interfaces. PMID:23003184

  3. Switching Transistor

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

  4. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    NASA Astrophysics Data System (ADS)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

  5. Anomalous electronic structure and magnetoresistance in TaAs2

    PubMed Central

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  6. Nanoscale dissipation and magnetoresistive 1/f noise in spin valves

    NASA Astrophysics Data System (ADS)

    Diao, Zhu; Nowak, E. R.; Haughey, K. M.; Coey, J. M. D.

    2011-09-01

    Spatial correlations of 1/f noise in yoke-shaped, giant magnetoresistance spin valve sensors are reported. An upper bound of 135 nm, corresponding to a magnetic volume of <105 nm3, is determined for the lateral size of the magnetic fluctuators responsible for the magnetoresistive 1/f noise in regions where the resistance susceptibility is large. The normalized noise power is found to scale inversely with the separation between voltage taps along the arm of the yoke, also consistent with a local noise mechanism. The magnetoresistive 1/f noise is associated with quasiequilibrium fluctuations in the micromagnetic structure having a length scale set by the disorder formed during the deposition and processing of the materials stack.

  7. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    PubMed

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible. PMID:26783634

  8. Anomalous electronic structure and magnetoresistance in TaAs2.

    PubMed

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  9. Anomalous electronic structure and magnetoresistance in TaAs2

    NASA Astrophysics Data System (ADS)

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-06-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  10. Electronic structure basis for the extraordinary magnetoresistance in WTe2

    DOE PAGESBeta

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; Cava, R. J.; Valla, T.

    2014-11-19

    The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. As a result, a change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior ofmore » the magnetoresistance in WTe₂ was identified.« less

  11. Anomalous electronic structure and magnetoresistance in TaAs2

    DOE PAGESBeta

    Luo, Yongkang; McDonald, R. D.; Rosa, P. F. S.; Scott, B.; Wakeham, N.; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Ronning, F.

    2016-01-01

    We report that the change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. In conclusion, density functional calculations find that TaAs2 is a new topological semimetal [Z2 invariant (0;111)] withoutmore » Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.« less

  12. Large Magnetoresistance Effects in Novel Layered Rare Earth Halides

    NASA Astrophysics Data System (ADS)

    Kremer, R. K.; Ryazanov, M.; Simon, A.

    We give a survey of the structures, electric, magnetic and magnetoresistance properties of the two novel low dimensional rare-earth halide systems, GdI2 and GdIHy (2/3 < y ≤ 1). The large magnetoresistance e.ect observed for GdI2 can be understood on the basis of a conventional spin disorder scattering mechanism, however, strongly magni.ed by the structural anisotropy and the special topology of the Fermi surface. Bound magnetic polarons are formed in GdIHy leading to a metal insulator transition below ~ 30 K. The mobility of the magnetic polarons can be e.ectively modi.ed by external magnetic .fields resulting in the large experimentally found magnetoresistance.

  13. Linear field amplification for magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Trindade, I. G.; Fermento, R.; Sousa, J. B.; Chaves, R. C.; Cardoso, S.; Freitas, P. P.

    2008-05-01

    In this article, we describe the fabrication and characterization of a spin valve (SV) magnetoresistive (MR) sensor, located in the gap of two magnetically soft flux guides (FGs) that enhance the sensor magnetic field sensitivity, while keeping in the sensor a quasilinear Barkhausen-noise-free response. Top pinned SV sensors were fabricated into stripes, having lengths of 100μm and widths of 2 and 3μm, by optical lithography and ion-milling etching. The FGs consisted of poles and yokes of an amorphous alloy of Co88.4Zr3.3Nb8.3, prepared by physical vapor deposition and were lithographically defined by a lift-off process. The SV sensor MR responses to applied uniform magnetic fields Ha, when either isolated or located in the gap of two types of FGs, were characterized in terms of the saturation field, coercive force, and sensitivity. The impact of the FG geometry in the magnetic field amplification and sensor response characteristics were studied. Magnetic force microscopy analysis was performed to identify the presence of multidomain states in the FGs and of a remanent field in their gap. SV sensors in the gap of FGs using long poles and having a sensing area of 1000μm2 exhibit a linear sensitivity of 50mV/Oe in the field range of a couple of oersteds. The SV sensor in the gap of magnetically soft FGs exhibits enhanced hysteresis, characterized by a coercive force of approximately 1Oe. Two schemes are proposed to reduce the hysteresis in the sensor response.

  14. Magnetoresistive-based static tester for actuators

    NASA Astrophysics Data System (ADS)

    Borme, J.; Freitas, A. S.; Cardoso, S.; Almeida, J. M.; Chaves, R. C.; Freitas, P. P.

    2008-04-01

    A static tester for precision actuators is proposed. It is intended to test the functioning of future actuators to be used in hard drive read heads. The design allows a simple fabrication of a nanometer-scale position measurement system that can measure lateral, vertical, and angular displacements. The tester consists of (a) a reference magnetic layer of CoCrPt, (150×100μm2, 600nm thick) and (b) a sequence of four spin-valve sensors. The tested sensors have crossed anisotropies, 6.9% magnetoresistance with a linear response, 0.5%/mT sensitivity, coercive field less than 0.1mT and resistance of 1680Ω in the parallel state. A noise level of 6nV/√Hz was measured at thermal background for 0.2mA of applied current. The lateral displacement is measured by the two spin valves in the center. While the magnetic element is passing over these sensors, the measured signal on each of them varies in opposite directions, allowing a precise measurement of the center position. The two outer spin valves are sensitive to the angular orientation of the magnetic element. The relative movements of the spin valves and magnetic element are controlled by computer using piezoelectric crystals and step motors. Since the sensors are measuring the in-plane component of the field, the signal measured decreases rapidly with sensor-to-plane distance. An appropriate range for flight height is about 30μm. Simulations of the signal are in agreement with measurements.

  15. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    SciTech Connect

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-11-15

    The magnetoresistance {Delta}{rho}/{rho} of single-crystal samples of praseodymium and neodymium hexaborides (PrB{sub 6} and NdB{sub 6}) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB{sub 6} and NdB{sub 6} compounds. An analysis of the dependences {Delta}{rho}(H)/{rho} has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-{Delta}{rho}/{rho} {proportional_to} H{sup 2}), a linear positive contribution ({Delta}{rho}/{rho} {proportional_to} H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB{sub 6} and NdB{sub 6} compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB{sub 6} and NdB{sub 6}, ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility {chi}{sub loc} has been estimated. It has been demonstrated that, in the temperature range T{sub N} < T < 20 K, the behavior of the local magnetic susceptibility {chi}{sub loc} for the compounds under investigation can

  16. Anomalous rf magnetoresistance in copper at 4/degree/K

    SciTech Connect

    Halama, H.J.; Prodell, A.G.; Rogers, J.T.; De Panfilis, S.; Melissinos, A.C.; Moskowitz, B.E.; Semertzidis, Y.K.; Wuensch, W.U.; Fowler, W.B.; Nezrick, F.A.

    1988-03-01

    We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f = 1.2 GHz and at 4.4/degree/K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the DC magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the TF surface current. 17 refs., 4 figs., 1 tab.

  17. Magnetoresistance of nanosized magnetic configurations in single nanowires

    NASA Astrophysics Data System (ADS)

    Wegrowe, J.-E.; Gilbert, S.; Doudin, B.; Ansermet, J.-Ph.

    1998-03-01

    The problem of studying spin configurations at nanoscopic level is that magnetic measurements at this scale cannot be performed using usual magnetometers. We have shown that anisotropic magnetoresistance (AMR) measured with micro-contacts allows spin configurations of a single nanowire to be studied in details. The nanowires are diameter 50 nm and length 6000 nm and are produced by a combination of electrodeposition in track-etched membrane templates and sputtering technics. Magnetoresistance of well-defined spin configurations in single nanowires, like Curling magnetization reversal modes or domain wall, are measured.

  18. Detection of magnetic resonance signals using a magnetoresistive sensor

    DOEpatents

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  19. Spin Hall magnetoresistance induced by a nonequilibrium proximity effect.

    PubMed

    Nakayama, H; Althammer, M; Chen, Y-T; Uchida, K; Kajiwara, Y; Kikuchi, D; Ohtani, T; Geprägs, S; Opel, M; Takahashi, S; Gross, R; Bauer, G E W; Goennenwein, S T B; Saitoh, E

    2013-05-17

    We report anisotropic magnetoresistance in Pt|Y(3)Fe(5)O(12) bilayers. In spite of Y(3)Fe(5)O(12) being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y(3)Fe(5)O(12), excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance." PMID:25167435

  20. Negative magnetoresistance in a magnetic semiconducting Zintl phase: Eu(3)In(2)P(4).

    PubMed

    Jiang, Jiong; Olmstead, Marilyn M; Kauzlarich, Susan M; Lee, Han-Oh; Klavins, Peter; Fisk, Zachary

    2005-07-25

    A new rare earth metal Zintl phase, Eu(3)In(2)P(4), was synthesized by utilizing a metal flux method. The compound crystallizes in the orthorhombic space group Pnnm with the cell parameters a = 16.097(3) A, b = 6.6992(13) A, c = 4.2712(9) A, and Z = 2 (T = 90(2) K, R1 = 0.0159, wR2 = 0.0418 for all data). It is isostructural to Sr(3)In(2)P(4). The structure consists of tetrahedral dimers, [In(2)P(2)P(4/2)](6-), that form a one-dimensional chain along the c axis. Three europium atoms interact via a Eu-Eu distance of 3.7401(6) A to form a straight line triplet. Single-crystal magnetic measurements show anisotropy at 30 K and a magnetic transition at 14.5 K. High-temperature data give a positive Weiss constant, which suggests ferromagnetism, while the shape of susceptibility curves (chi vs T) suggests antiferromagnetism. Heat capacity shows a magnetic transition at 14.5 K that is suppressed with field. This compound is a semiconductor according to the temperature-dependent resistivity measurements with a room-temperature resistivity of 0.005(1) Omega m and E(g) = 0.452(4) eV. It shows negative magnetoresistance below the magnetic ordering temperature. The maximum magnetoresistance (Deltarho/rho(H)) is 30% at 2 K with H = 5 T. PMID:16022530

  1. Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

    PubMed Central

    Pavlosiuk, Orest; Kaczorowski, Dariusz; Wiśniewski, Piotr

    2015-01-01

    We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material. PMID:25778789

  2. Vanadium Dioxide Phase Change Switches

    NASA Astrophysics Data System (ADS)

    Field, Mark; Hillman, Christopher; Stupar, Philip; Hacker, Jonathan; Griffith, Zachary; Lee, Kang-Jin

    2015-03-01

    We have built RF switches using vanadium dioxide thin films fabricated within a section of inverted transmission line with integrated on chip heaters to provide local thermal control. On heating the films above the metal insulator transition we obtain record low switch insertion loss of -0.13 dB at 50 GHz and -0.5 dB at 110 GHz. We investigate the device physics of these switches including the effect of a deposited insulator on the VO2 switching characteristics, the self-latching of the devices under high RF powers and the effect of resistance change with temperature on the device linearity. Finally we show how these devices can be integrated with silicon germanium RF circuits to produce a field programmable device where the RF signal routing can be selected under external control. Supported under the DARPA RF-FPGA Program, Contract HR0011-12-C-0092.

  3. Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Wang, Yi; Tu, Liang; Feng, Yinglong; Klein, Todd; Wang, Jian-Ping

    2014-07-01

    Giant magnetoresistive (GMR) biosensors have emerged as powerful tools for ultrasensitive, multiplexed, real-time electrical readout, and rapid biological/chemical detection while combining with magnetic particles. Finding appropriate magnetic nanoparticles (MNPs) and its influences on the detection signal is a vital aspect to the GMR bio-sensing technology. Here, we report a GMR sensor based detection system capable of stable and convenient connection, and real-time measurement. Five different types of MNPs with sizes ranging from 10 to 100 nm were investigated for GMR biosensing. The experiments were accomplished with the aid of DNA hybridization and detection architecture on GMR sensor surface. We found that different MNPs markedly affected the final detection signal, depending on their characteristics of magnetic moment, size, and surface-based binding ability, etc. This work may provide a useful guidance in selecting or preparing MNPs to enhance the sensitivity of GMR biosensors, and eventually lead to a versatile and portable device for molecular diagnostics.

  4. Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature

    SciTech Connect

    Sasaki, Tomoyuki Koike, Hayato; Oikawa, Tohru; Suzuki, Toshio; Ando, Yuichiro; Suzuki, Yoshishige; Shiraishi, Masashi

    2014-02-03

    Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Ω at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately.

  5. Magnetoresistance of Bloch-wall-type magnetic structures induced in NiFe/CoSm exchange-spring bilayers

    NASA Astrophysics Data System (ADS)

    Mibu, K.; Nagahama, T.; Shinjo, T.; Ono, T.

    1998-09-01

    The magnetoresistance originating from magnetic structures with gradually rotating magnetic moments, like a Bloch wall, was investigated using soft-magnetic (NiFe)/hard-magnetic (CoSm) bilayers, whose magnetic structures were well characterized. The magnetoresistance was measured with an electric current in the film plane; the magnetoresistance in this geometry corresponds to that due to a current parallel to a Bloch wall. The main feature of the magnetoresistance curves was ruled by the anisotropic magnetoresistance. It was found that a giant magnetoresistance-type effect coexisted; the effect was very small in comparison with the anisotropic magnetoresistance effect.

  6. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  7. Bimetal switches in an AND logic gate

    NASA Astrophysics Data System (ADS)

    Lubrica, Joel V.; Lubrica, Quantum Yuri B.

    2016-09-01

    In this frontline, we use bimetal switches to provide inputs in an electrical AND logic gate. These switches can be obtained from the pre-heat starters of fluorescent lamps, by safely removing the glass enclosure. They may be activated by small open flames. This frontline has a historical aspect because fluorescent lamps, together with pre-heat starters, are now being replaced by compact fluorescent, halogen, and LED lamps.

  8. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    PubMed

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

  9. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    SciTech Connect

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  10. Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

    SciTech Connect

    Hu, R.; Thomas, K.; Lee, Y.; Vogt, T.; Choi, E.; Mitrovic, V.; Hermann, R.; Grandjean, F.; Canfield, P.; Kim, J.; Goldman, A.; Petrovic, C.

    2008-02-27

    We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb{sub 2}, a nearly magnetic or 'Kondo' semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

  11. Tuning magnetic nanostructures and flux concentrators for magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Yin, Xiaolu; Liu, Yen-Fu; Ewing, Dan; Ruder, Carmen K.; De Rego, Paul J.; Edelstein, A. S.; Liou, Sy-Hwang

    2015-09-01

    The methods for the optimization of the magnetoresistive (MR) sensors are to reduce sources of noises, to increase the signal, and to understand the involved fundamental limitations. The high-performance MR sensors result from important magnetic tunnel junction (MTJ) properties, such as tunneling magnetoresistance ratio (TMR), coercivity (Hc), exchange coupling field (He), domain structures, and noise properties as well as the external magnetic flux concentrators. All these parameters are sensitively controlled by the magnetic nanostructures, which can be tuned by varying junction free layer nanostructures, geometry, and magnetic annealing process etc. In this paper, we discuss some of efforts that an optimized magnetic sensor with a sensitivity as high as 5,146 %/mT. This sensitivity is currently the highest among all MR-type sensors that have been reported. The estimated noise of our magnetoresistive sensor is 47 pT/Hz1/2 at 1 Hz. This magnetoresistance sensor dissipates only 100 μW of power while operating under an applied voltage of 1 V at room temperature.

  12. Large magnetoresistance and electronic anisotropy in NbAs2

    NASA Astrophysics Data System (ADS)

    Shen, Bing; Jiang, Shan; Ni, Ni

    Recently, extremely large magnetoresistance (XMR) was discovered in semimetal such as WTe2 LaSb and so on, triggering extensive reseach on these materials and the origin of XMR. In this talk, we will report the transport properties of non-magnetic layered pnictide material NbAs2. Large transverse magnetoresistance is observed. At 10 K, the magnetoresistance is around 13000 % in the field of 9 T and shows no saturation behavior. The temperature dependent resistivity at various fields exhibits metal-to-semiconductor transition behavior around 100 K, which is coincident with the sudden increase of the Hall signal in the same temperature region. The angle dependent magnetoresistance at various temperatures follows the 3D scaling behavior with the mass anisotropy around 1.3-1.4, indicative of its 3D electron structure. Quantum oscillation data reveal the existence of at least three Fermi pockets in this material. Work at UCLA was supported by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (BES) under Award Number DE-SC0011978.

  13. Spin Hall magnetoresistance in ultra thin Pt/LSMO

    NASA Astrophysics Data System (ADS)

    Lei, Na; Bai, Yu; Ding, Zhao; Shao, Jian; Wei, Wengang; Yin, Lifeng; Wu, Yizheng; Shen, Jian

    Spin Hall magnetoresistance (SMR) in a non-/ ferro- magnetic (NM/FM) bilayer is an angular dependence of resistance of the NM layer on the magnetization of FM layer. It provides an easy approach to the spin Hall effect in a simple bilayer system, however similar effects mixed in the system and might complicated the data analysis and interpretation. Here we present a case of ultra thin Pt/LSMO, in which LSMO (bellow 7 unit cells) layer is an insulating magnetic oxide with Curie temperature of 120K. Below 120K, our results clearly show the coexistence of the anisotropic magnetoresistance (AMR) and SMR effects. However, far away above Curie temperature, where the LSMO is paramagnetic, the magnetoresistance doesn't disappear but even increase, which is distinct from the case of Pt/YIG. Here it is neither SMR nor AMR, and an additional mechanism is required. Anomalous Hall effect was also performed, which is consistent with SMR measurement. We propose some physical pictures which could attribute to this magnetoresistance in paramagnetic state.

  14. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications

    PubMed Central

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-01-01

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors. PMID:27322277

  15. Giant Magnetoresistive (GMR) Sensor Microelectromechanical System (MEMS) Device

    NASA Technical Reports Server (NTRS)

    Ramesham, R.

    1999-01-01

    The measurement of acceleration has been accomplished using several technologies in high-reliability applications such as guidance control, detonation, and shock/vibration measurement. Electromechanical, piezoelectric, piezoresistive, and capacitive acceleration sensors are available and the literature pertinent to giant magnetoresistive sensors (GMR) for the above applications are scanty.

  16. Spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

    NASA Astrophysics Data System (ADS)

    Althammer, Matthias

    2014-03-01

    Pure spin currents, i.e. the net flow of spin angular momentum without an accompanying charge current, represent a new paradigm for spin transport and spintronics. We have experimentally studied a new type of magnetoresistance effect, which arises from the interaction of charge and spin current flows in ferromagnetic insulator/normal metal hybrid structures. In more detail, we measured the resistance of yttrium iron garnet(YIG)/Pt, YIG/nonferromagnet/Pt, nickel ferrite/Pt, and magnetite/Pt hybrid structures as a function of the magnitude and the orientation of an external magnetic field. The resistance changes observed can be quantitatively traced back to the combined action of spin Hall and inverse spin Hall effect in the Pt metal layer, and are thus termed spin Hall magnetoresistance (SMR) [ 1 , 2 ] . We show that the SMR is qualitatively different from the conventional anisotropic magnetoresistance effect arising in magnetic metals. From the magnetoresistance measurements in YIG/Au/Pt and YIG/Cu/Pt structures and from x-ray magnetic circular dichroism measurements on YIG/Pt heterostructures we exclude a static proximity magnetization in Pt as the origin of the magnetoresistance, in contrast to the mechanism proposed by Huang et al. [ 3 ] . Furthermore, the SMR enables us to quantify the spin Hall angle as a function of temperature in our Pt layers. In addition, we analyze the anomalous Hall type contribution of the SMR to quantify the imaginary part of the spin mixing conductance. Financial support by the DFG via SPP 1538 (project no. GO 944/4) and the Nanoinitiative Munich (NIM) is gratefully acknowledged.

  17. Characterization and Application of Large Magnetoresistance in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Wohlgenannt, Markus

    2007-03-01

    Recent years have seen a surge in interest in magnetoresistive and spintronic properties of organic semiconductors, whereas this field was previously almost exclusively concerned with their electrooptical properties. We report on the extensive experimental characterization of a recently discovered large and intriguing magnetoresistive effect in organic light- emitting diodes that reaches up to 10% at room temperature for magnetic fields, B = 10mT. This magnetoresistive effect is therefore amongst the largest of any bulk material. The study includes a range of materials that show greatly different chemical structure, mobility, hyperfine and spin-orbit coupling strength. We show that the applied magnetic field affects the carrier transport inside the bulk semiconductor. By demonstrating that the effect is critically altered by the presence of strong spin- orbit coupling and that it does not occur in fullerene devices, we prove that the transport in organics sensitively depends on spin-dynamics induced by hyperfine interaction with the hydrogen protons. We discuss a possible relation between organic magnetoresistance and other magnetic field effects in organics that were known long before its discovery. As a possible mechanism we describe how Pauli's principle restricts carrier hopping between singly occupied sites near the Fermi level. However, spin-mixing by the hyperfine interaction may partially lift this restriction. Since the devices we describe can be manufactured cheaply they hold promise for applications where large numbers of magnetoresistive devices are needed, such as magnetic random- access-memory (MRAM); and applications related to organic light- emitting diode displays such as touch screens where the position of a magnetic stylus is detected (patent pending). We will show a video of a simple demonstrator device.

  18. Selenium bond decreases ON resistance of light-activated switch

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Vitrified amorphous selenium bond decreases the ON resistance of a gallium arsenide-silicon light-activated, low-level switch. The switch is used under a pulse condition to prolong switch life and minimize errors due to heating, devitrification, and overdrawing.

  19. Nernst coefficient and magnetoresistance in high-T(c) superconductors: the role of superconducting fluctuations.

    PubMed

    Kontani, Hiroshi

    2002-12-01

    In high-T(c) cuprates, the Nernst coefficient (nu) as well as the magnetoresistance (Deltarho/rho) increases drastically below the pseudogap temperature, T(*), which attracts much attention as a key phenomenon in the pseudogap region. We study these transport phenomena in terms of the fluctuation-exchange+T-matrix approximation. In this present theory, the d-wave superconducting (SC) fluctuations, which are mediated by antiferromagnetic (AF) correlations, become dominant below T(*). We especially investigate the vertex corrections both for the charge current and the heat one to keep the conservation laws. As a result, the mysterious behaviors of nu and Deltarho/rho are naturally explained as the reflection of the enhancement of the SC fluctuation, without assuming thermally excited vortices. The present result suggests that the pseudogap phenomena are well described in terms of the Fermi liquid with AF and SC fluctuations. PMID:12485031

  20. Automatic thermal switch

    NASA Technical Reports Server (NTRS)

    Wing, L. D.; Cunningham, J. W. (Inventor)

    1981-01-01

    An automatic thermal switch to control heat flow includes a first thermally conductive plate, a second thermally conductive plate and a thermal transfer plate pivotally mounted between the first and second plates. A phase change power unit, including a plunger connected to the transfer plate, is in thermal contact with the first thermally conductive plate. A biasing element, connected to the transfer plate, biases the transfer plate in a predetermined position with respect to the first and second plates. When the phase change power unit is actuated by an increase in heat transmitted through the first plate, the plunger extends and pivots the transfer plate to vary the thermal conduction between the first and second plates through the transfer plate. The biasing element, transfer plate and piston can be arranged to provide either a normally closed or normally open thermally conductive path between the first and second plates.

  1. Anomalous magnetoresistance in nanocrystalline gadolinium at low temperatures

    NASA Astrophysics Data System (ADS)

    Mathew, S. P.; Kaul, S. N.

    2015-02-01

    The results of a detailed investigation of electrical resistivity, ρ(T) and transverse magnetoresistance (MR) in nanocrystalline Gd samples with an average grain size d = 12 nm and 18 nm reveal the following. Besides a major contribution to the residual resistivity, ρr(0), arising from the scattering of conduction electrons from grain surfaces/interfaces/boundaries (which increases drastically as the average grain size decreases, as expected), coherent electron-magnon scattering makes a small contribution to ρr(0), which gets progressively suppressed as the applied magnetic field (H) increases in strength. At low temperatures (T ≲ 40 K) and fields (H = 0 and H = 5 kOe), ρH(T) varies as T3/2 with a change in slope at T+ ≃ 16.5 K. As the field increases beyond 5 kOe, the T3/2 variation of ρH(T) at low temperatures (T ≲ 40 K) changes over to the T2 variation and a slight change in the slope dρH/dT2 at T+(H) disappears at H ⩾ 20 kOe. The electron-electron scattering (Fermi liquid) contribution to the T2 term, if present, is completely swamped by the coherent electron-magnon scattering contribution. As a function of temperature, (negative) MR goes through a dip at a temperature Tmin ≃ T+, which increases with H as H2/3. MR at Tmin also increases in magnitude with H and attains a value as large as ˜15% (17%) for d = 12 nm (18 nm) at H = 90 kOe. This value is roughly five times greater than that reported earlier for crystalline Gd at Tmin ≃ 100 K. Unusually large MR results from an anomalous softening of magnon modes at T ≃ Tmin ≈ 20 K. In the light of our previous magnetization and specific heat results, we show that all the above observations, including the H2/3 dependence of Tmin (with Tmin(H) identified as the Bose-Einstein condensation (BEC) transition temperature, TBEC(H)), are the manifestations of the BEC of magnons at temperatures T ⩽ TBEC. Contrasted with crystalline Gd, which behaves as a three-dimensional (3D) pure uniaxial dipolar

  2. Nanoelectromechanical contact switches

    NASA Astrophysics Data System (ADS)

    Loh, Owen Y.; Espinosa, Horacio D.

    2012-05-01

    Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. These differences give NEM switches an advantage over semiconductor switches in some applications -- for example, NEM switches perform much better in extreme environments -- but semiconductor switches benefit from a much superior manufacturing infrastructure. Here we review the potential of NEM-switch technologies to complement or selectively replace conventional complementary metal-oxide semiconductor technology, and identify the challenges involved in the large-scale manufacture of a representative set of NEM-based devices.

  3. Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

    SciTech Connect

    Fischer, M.; Klar, P. J.; Elm, M. T.; Sakita, S.; Hara, S.

    2015-01-19

    We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.

  4. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    PubMed Central

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  5. Defect Induced Enhanced Low Field Magnetoresistance and Photoresponse in Pr0.6Ca0.4MnO3 thin Films

    NASA Astrophysics Data System (ADS)

    Elovaara, Tomi; Majumdar, Sayani; Huhtinen, Hannu; Paturi, Petriina

    We have investigated the effect of grain boundary related defects on the electronic transport properties of the colossal magnetoresistive low bandwidth manganite Pr0:6Ca0:4MnO3 (PCMO) thin films. A series of PCMO films were prepared by pulsed laser deposition method on MgO and STO substrates. Characterizations of the structural, magnetic and magneto-transport properties show that the films prepared on MgO substrate contain higher amount of structural defects and with decreasing deposition temperature an increasing amount of difierent crystal orientations as the level of texturing decreases. According to the low field magnetoresistance (MR) measurements, the poorly textured samples display an increased low field MR due to a grain boundary tunneling effect at low temperatures compared to the fully textured PCMO film on STO substrate. However, in spite of the level of texturing, all the samples showed a colossal magnetoresistive insulator to metal switching of almost eight orders of magnitude at low temperatures. The magnetic field required for insulator to metal transition (IMT) is much higher in PCMO samples with more structural defects. However, IMT field could be reduced over 3 T by illuminating the sample.

  6. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

    PubMed Central

    Yang, D. Z.; Wang, T.; Sui, W. B.; Si, M. S.; Guo, D. W.; Shi, Z.; Wang, F. C.; Xue, D. S.

    2015-01-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature. PMID:26323495

  7. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    PubMed

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-01-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature. PMID:26323495

  8. Magnetoresistive polyaniline/multi-walled carbon nanotube nanocomposites with negative permittivity

    NASA Astrophysics Data System (ADS)

    Gu, Hongbo; Guo, Jiang; He, Qingliang; Jiang, Yuan; Huang, Yudong; Haldolaarachige, Neel; Luo, Zhiping; Young, David P.; Wei, Suying; Guo, Zhanhu

    2013-12-01

    Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 106 Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material changes from a metamaterial to an ordinary dielectric medium. The observed positive and negative GMR behaviors in these disordered systems as verified by the temperature dependent resistivity exploration were well explained through a wave-function shrinkage model and orbital magnetoconductivity theory by calculating the changed localization length (a0).Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 106 Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material

  9. Magneto-resistive coefficient enhancement observed around Verwey-like transition on spinel ferrites XFe{sub 2}O{sub 4} (X = Mn, Zn)

    SciTech Connect

    López Maldonado, K. L. Vazquez Zubiate, L.; Elizalde Galindo, J. T.; Presa, P. de la; Matutes Aquino, J. A.

    2014-05-07

    Manganese and Zinc ferrites were prepared by solid state reaction. The resulting powders were pressed into pellets and heat treated at 1100 °C. The samples were characterized by using X-ray diffraction, pure phases of zinc ferrite (ZnFe{sub 2}O{sub 4}) and manganese ferrite (MnFe{sub 2}O{sub 4}) were obtained. Scanning electron microscopy images showed a good contact between particles. A drop of electrical resistance was found in both samples, MnFe{sub 2}O{sub 4} and ZnFe{sub 2}O{sub 4}, with values going from 2750 to 130 Ω and from 1100 to 55 Ω, respectively. Transition temperatures were determined to be T{sub V} = 225 K for MnFe{sub 2}O{sub 4} and T{sub V} = 130 K for ZnFe{sub 2}O{sub 4}. Magnetoresistance measurements were carried out in the temperature range where R showed the transition, defined as the Verwey-like transition temperature range, ΔT{sub V}. No magnetoresistive effect was observed out of it. The magnetoresistive coefficient (MRC) observed at ΔT{sub V} reached its maximum values of 1.1% for MnFe{sub 2}O{sub 4} and 6.68% for ZnFe{sub 2}O{sub 4}. The differences between MRC values are related to the divalent metal element used. Finally, the magnetoresistive response indicates that the electrical transition observed is strongly influencing the magnetoresistance; where the underlying responsible for this behavior could be a charge reordering occurring at the Verwey-like transition temperature.

  10. Analysis of the Distribution of Magnetic Fluid inside Tumors by a Giant Magnetoresistance Probe

    PubMed Central

    Gooneratne, Chinthaka P.; Kurnicki, Adam; Yamada, Sotoshi; Mukhopadhyay, Subhas C.; Kosel, Jürgen

    2013-01-01

    Magnetic fluid hyperthermia (MFH) therapy uses the magnetic component of electromagnetic fields in the radiofrequency spectrum to couple energy to magnetic nanoparticles inside tumors. In MFH therapy, magnetic fluid is injected into tumors and an alternating current (AC) magnetic flux is applied to heat the magnetic fluid- filled tumor. If the temperature can be maintained at the therapeutic threshold of 42°C for 30 minutes or more, the tumor cells can be destroyed. Analyzing the distribution of the magnetic fluid injected into tumors prior to the heating step in MFH therapy is an essential criterion for homogenous heating of tumors, since a decision can then be taken on the strength and localization of the applied external AC magnetic flux density needed to destroy the tumor without affecting healthy cells. This paper proposes a methodology for analyzing the distribution of magnetic fluid in a tumor by a specifically designed giant magnetoresistance (GMR) probe prior to MFH heat treatment. Experimental results analyzing the distribution of magnetic fluid suggest that different magnetic fluid weight densities could be estimated inside a single tumor by the GMR probe. PMID:24312280

  11. THYRATRON SWITCH

    DOEpatents

    Creveling, R.; Bourgeois, N.A. Jr.

    1959-04-21

    An arrangement for utilizing a thyratron as a noise free switch is described. It has been discovered that the voltage between plate and cathode of a thyratron will oscillate, producing voltage spikes, if the tube carries only a fraction of its maximum rated current. These voltage spikes can produce detrimental effects where the thyratron is used in critical timing circuits. To alleviate this problem the disclosed circuit provides a charged capacitor and a resistor in parallel with the tube and of such value that the maximum current will flow from the capacitor through the thyratron when it is triggered. During this time the signal current is conducted through the tube, before the thyratron voltage starts to oscillate, and the signal current output is free of noise spikes.

  12. Magnetoresistive performance and comparison of supermagnetic nanoparticles on giant magnetoresistive sensor-based detection system

    PubMed Central

    Wang, Wei; Wang, Yi; Tu, Liang; Feng, Yinglong; Klein, Todd; Wang, Jian-Ping

    2014-01-01

    Giant magnetoresistive (GMR) biosensors have emerged as powerful tools for ultrasensitive, multiplexed, real-time electrical readout, and rapid biological/chemical detection while combining with magnetic particles. Finding appropriate magnetic nanoparticles (MNPs) and its influences on the detection signal is a vital aspect to the GMR bio-sensing technology. Here, we report a GMR sensor based detection system capable of stable and convenient connection, and real-time measurement. Five different types of MNPs with sizes ranging from 10 to 100 nm were investigated for GMR biosensing. The experiments were accomplished with the aid of DNA hybridization and detection architecture on GMR sensor surface. We found that different MNPs markedly affected the final detection signal, depending on their characteristics of magnetic moment, size, and surface-based binding ability, etc. This work may provide a useful guidance in selecting or preparing MNPs to enhance the sensitivity of GMR biosensors, and eventually lead to a versatile and portable device for molecular diagnostics. PMID:25043673

  13. Lateral electric-field control of giant magnetoresistance in Co/Cu/Fe/BaTiO{sub 3} multiferroic heterostructure

    SciTech Connect

    Savitha Pillai, S.; Kojima, H.; Itoh, M.; Taniyama, T.

    2015-08-17

    We report lateral electric-field-driven sizable changes in the magnetoresistance of Co/Cu/Fe tri-layered wires on BaTiO{sub 3} single crystal. While the observed change is marginal in the tetragonal phase of BaTiO{sub 3}, it reaches over 40% in the orthorhombic and rhombohedral phases with an electric field of 66 kV/cm. We attribute it to possible electric-field-induced variations of the spin-dependent electronic structures, i.e., spin polarization, of the Fe via interfacial strain transfer from BaTiO{sub 3}. The contrasting results for the different phases of BaTiO{sub 3} are discussed, associated with the distinct aspects of the ferroelectric polarization switching processes in each phase.

  14. Photoinduced magnetoresistance and magnetic-field-modulated photoelectric response in BiFeO3/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Xi, Jianfeng; Ni, Hao; Zhao, Kun; Lu, Huibin; Guo, Erjia; He, Meng; Jin, Kuijuan; Zhou, Yueliang; Yang, Guozhen; Xiao, Lizhi; Zhang, Zhenwei

    2016-05-01

    The BiFeO3 film grown on Si substrate without template exhibits a diode-like effect, and the forward direction of the diode can be switched by external electric fields. The laser irradiation and the magnetic field can induce polarization, thus modulating the photovoltaic effect. The magnetoresistance values change from -1.19 to -5.79 and to -35.48 % dramatically under 50 μA current in 770 Oe when the junction is irradiated by 532 and 1064 nm lasers, respectively. These results reveal unusual and interesting charge conduction behavior in leaky ferroelectrics and should promote the study of BiFeO3 based on multifunctional materials.

  15. Current-assisted magnetization switching in a mesoscopic NiFe ring with nanoconstrictions of a wire

    NASA Astrophysics Data System (ADS)

    Lu, Zhengqi; Zhou, Yun; Du, Yuqing; Moate, Roy; Wilton, David; Pan, Genhua; Chen, Yifang; Cui, Zheng

    2006-04-01

    A mesoscopic NiFe ring with nanoconstrictions of a wire was fabricated by electron beam lithography and lift-off techniques. Magnetic switching and reversal process have been measured by magnetoresistance as a function of the applied current. It is shown that the applied current has an effect on the switching fields and finally affects the reversal process. The decrease or increase in the switching field from the vortex state to the onion state depends on the electron flow with respect to the direction of domain propagation. The spin in the ring switches from an onion state to the opposite onion state in the low applied current via the double switching process. However, the spin in the ring switches directly from an onion state to the opposite due to the spin torque effect when the applied current is higher than the critical current density (of 107A/cm2).

  16. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes

    SciTech Connect

    Wang, Y. Y.; Song, C. Wang, G. Y.; Zeng, F.; Pan, F.

    2013-11-11

    Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling anisotropic magnetoresistance (TAMR) behavior in antiferromagnet-based [Pt/Co]/IrMn/AlO{sub x}/metal (metal = Pt, Au, Cu, Al) junctions is insensitive to the top metal electrodes. Similar out-of-plane signals are detected for different electrodes, in contrast to the varied shapes of in-plane TAMR curves which are most likely attributed to the differences in the multidomain structure of the magnetic electrode. This would add a different dimension to spintronics.

  17. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies

    NASA Astrophysics Data System (ADS)

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-01

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications.We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. Electronic supplementary information (ESI) available: Experimental details; supplementary figures and tables. See DOI: 10.1039/c6nr03311c

  18. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    PubMed Central

    Alfadhel, Ahmed; Khan, Mohammed Asadullah; Cardoso, Susana; Leitao, Diana; Kosel, Jürgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature. PMID:27164113

  19. Giant magnetoresistance in the variable-range hopping regime

    SciTech Connect

    Ioffe, L. B.; Spivak, B. Z.

    2013-09-15

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  20. Co/Cu multilayers with reduced magnetoresistive hysteresis

    NASA Astrophysics Data System (ADS)

    Kubinski, D. J.; Holloway, H.

    1997-01-01

    Practical applications of Co/Cu multilayers (MLs) require copper thicknesses either ≈ 9 Å or ≈ 20 Å corresponding to the first or second antiferromagnetic maximum (AFM). The first AFM has much smaller magnetoresistive hysteresis than the second, but also has lower sensitivity. We discuss application of these MLs when low hysteresis is required. For the first AFM we may improve the sensitivity while retaining low hysteresis by increasing the cobalt thickness to 30-40 Å. At the second AFM we can reduce the magnetoresistive hysteresis by reducing the cobalt thickness to ˜ 3 Å. A particularly attractive combination of high sensitivity and low hysteresis is obtained at the second AFM by alternating such very thin Co layers with 15 Å thick Co layers.

  1. A Magnetoresistive Tactile Sensor for Harsh Environment Applications.

    PubMed

    Alfadhel, Ahmed; Khan, Mohammed Asadullah; Cardoso, Susana; Leitao, Diana; Kosel, Jürgen

    2016-01-01

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature. PMID:27164113

  2. Hall effect in the extremely large magnetoresistance semimetal WTe2

    NASA Astrophysics Data System (ADS)

    Luo, Yongkang; Li, H.; Dai, Y. M.; Miao, H.; Shi, Y. G.; Ding, H.; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.; Thompson, J. D.

    2015-11-01

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ˜160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole "compensation" and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.

  3. Giant magnetoresistance in the variable-range hopping regime

    NASA Astrophysics Data System (ADS)

    Ioffe, L. B.; Spivak, B. Z.

    2013-09-01

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  4. Magneto-Resistance in thin film boron carbides

    NASA Astrophysics Data System (ADS)

    Echeverria, Elena; Luo, Guangfu; Liu, J.; Mei, Wai-Ning; Pasquale, F. L.; Colon Santanta, J.; Dowben, P. A.; Zhang, Le; Kelber, J. A.

    2013-03-01

    Chromium doped semiconducting boron carbide devices were fabricated based on a carborane icosahedra (B10C2H12) precursor via plasma enhanced chemical vapor deposition, and the transition metal atoms found to dope pairwise on adjacent icosahedra site locations. Models spin-polarized electronic structure calculations of the doped semiconducting boron carbides indicate that some transition metal (such as Cr) doped semiconducting boron carbides may act as excellent spin filters when used as the dielectric barrier in a magnetic tunnel junction structure. In the case of chromium doping, there may be considerable enhancements in the magneto-resistance of the heterostructure. To this end, current to voltage curves and magneto-transport measurements were performed in various semiconducting boron carbide both in and out plane. The I-V curves as a function of external magnetic field exhibit strong magnetoresistive effects which are enhanced at liquid Nitrogen temperatures. The mechanism for these effects will be discussed in the context of theoretical calculations.

  5. Linear magnetoresistance in mosaic-like bilayer graphene

    NASA Astrophysics Data System (ADS)

    Kisslinger, Ferdinand; Ott, Christian; Heide, Christian; Kampert, Erik; Butz, Benjamin; Spiecker, Erdmann; Shallcross, Sam; Weber, Heiko B.

    2015-08-01

    The magnetoresistance of conductors usually has a quadratic dependence on magnetic field, however, examples exist of non-saturating linear behaviour in diverse materials. Assigning a specific microscopic mechanism to this unusual phenomenon is obscured by the co-occurrence and interplay of doping, mobility fluctuations and a polycrystalline structure. Bilayer graphene has virtually no doping fluctuations, yet provides a built-in mosaic tiling due to the dense network of partial dislocations. We present magnetotransport measurements of epitaxial bilayer graphene that exhibits a strong and reproducible linear magnetoresistance that persists to B = 62 T at and above room temperature, decorated by quantum interference effects at low temperatures. Partial dislocations thus have a profound impact on the transport properties in bilayer graphene, a system that is frequently assumed to be dislocation-free. It further provides a clear and tractable model system for studying the unusual properties of mosaic conductors.

  6. Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

    SciTech Connect

    Bockhorn, L.; Haug, R. J.; Gornyi, I. V.; Schuh, D.; Wegscheider, W.

    2013-12-04

    A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

  7. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies.

    PubMed

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-16

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO(-)) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. PMID:27271347

  8. Giant positive magnetoresistance in metallic VOx thin films

    NASA Astrophysics Data System (ADS)

    Rata, A. D.; Kataev, V.; Khomskii, D.; Hibma, T.

    2003-12-01

    We report on giant positive magnetoresistance (MR) effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.

  9. Anomalous magneto-resistance in single crystals of silver chalcogenides

    NASA Astrophysics Data System (ADS)

    Zhang, Chenglong; Liu, Haiwen; Hua, Wei; Yuan, Zhunjun; Sun, Junliang; Xie, Xincheng; Jia, Shuang

    2015-03-01

    Silver chalcogenides have been known as quantum materials for over fifteen years but no single crystal was ever studied before. Very recently, we developed a method for growth of single crystals. Our measurements of magneto-resistance (MR) showed strong Shubnikov-de Haas (SdH) oscillations associated with a very low quantum limit. When the field is beyond this limit we observed a negative, longitudinal MR, which is believed as a fingerprint of chiral anomaly in Weyl Fermion systems.

  10. Spin-memory effect and negative magnetoresistance in hopping conductivity

    NASA Astrophysics Data System (ADS)

    Agam, Oded; Aleiner, Igor L.; Spivak, Boris

    2014-03-01

    We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The spin correlations are generated by the nonequilibrium electric currents and lead to the decrease of the conductivity. The application of the magnetic field destroys the correlations thus enhancing the conductance. This effect can occur even at magnetic fields as small as a few gauss.

  11. Handheld, giant magnetoresistive-sensor-based eddy current probes

    NASA Astrophysics Data System (ADS)

    Brady, S. K.; Palmer, D. D.

    2012-05-01

    The minimum crack length detectable with conventional eddy current probes increases dramatically as the thickness of metal through which the inspection is performed increases. The skin depth phenomenon is unavoidable, and demands low frequency inspection, hindering sensitivity. However, one time derivative introduced by Faraday's Law can be avoided by using giant magnetoresistive sensors to detect eddy currents instead of conventional coils, improving sensitivity. The theory will be explained, along with some probe designs and the observed benefits in sensitivity.

  12. Energy-delay performance of giant spin Hall effect switching for dense magnetic memory

    NASA Astrophysics Data System (ADS)

    Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

    2014-10-01

    We show that the giant spin Hall effect (GSHE) magnetoresistive random access memory (MRAM) can enable better energy delay and voltage performance than MTJ spin torque devices at 10-30 nm scaled nanomagnet dimensions. We propose a dense bit cell composed of a folded electrode to enable scaling to sub-10 nm CMOS. We derive the energy-delay trajectory and energy-delay product of GSHE and MTJ devices with an energy minimum at the magnetic characteristic time. Optimized GSHE devices with PMA can enable low voltage (<0.1 V), scaled dimensions, and fast switching time (100 ps) at an average switching energy approaching 100 aJ/bit.

  13. Negative magnetoresistance in Dirac semimetal Cd3As2.

    PubMed

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-01

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 10(17) cm(-3) at 300 K to 2.2 × 10(16) cm(-3) below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed. PMID:26744088

  14. Anisotropic magnetoresistivity in structured elastomer composites: modelling and experiments.

    PubMed

    Mietta, José Luis; Tamborenea, Pablo I; Martin Negri, R

    2016-08-14

    A constitutive model for the anisotropic magnetoresistivity in structured elastomer composites (SECs) is proposed. The SECs considered here are oriented pseudo-chains of conductive-magnetic inorganic materials inside an elastomer organic matrix. The pseudo-chains are formed by fillers which are simultaneously conductive and magnetic dispersed in the polymer before curing or solvent evaporation. The SEC is then prepared in the presence of a uniform magnetic field, referred to as Hcuring. This procedure generates the pseudo-chains, which are preferentially aligned in the direction of Hcuring. Electrical conduction is present in that direction only. The constitutive model for the magnetoresistance considers the magnetic pressure, Pmag, induced on the pseudo-chains by an external magnetic field, H, applied in the direction of the pseudo-chains. The relative changes in conductivity as a function of H are calculated by evaluating the relative increase of the electron tunnelling probability with Pmag, a magneto-elastic coupling which produces an increase of conductivity with magnetization. The model is used to adjust experimental results of magnetoresistance in a specific SEC where the polymer is polydimethylsiloxane, PDMS, and fillers are microparticles of magnetite-silver (referred to as Fe3O4[Ag]). Simulations of the expected response for other materials in both superparamagnetic and blocked magnetic states are presented, showing the influence of the Young's modulus of the matrix and filler's saturation magnetization. PMID:27418417

  15. Negative magnetoresistance in Dirac semimetal Cd3As2

    PubMed Central

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-01

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 1017 cm−3 at 300 K to 2.2 × 1016 cm−3 below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed. PMID:26744088

  16. Anisotropic giant magnetoresistance in NbSb2

    PubMed Central

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  17. Magnetoresistance of lanthanum manganites with activation-type conductivity

    SciTech Connect

    Kurkin, M. I. Neifeld, E. A.; Korolev, A. V.; Ugryumova, N. A.; Gudin, S. A.; Gapontseva, N. N.

    2013-05-15

    The temperature dependence of the resistivity and magnetic moment of La{sub 0.85}Ba{sub 0.15}MnO{sub 3} and La{sub 0.85}Sr{sub 0.15}MnO{sub 3} manganite single crystals in magnetic fields up to 90 kOe is investigated. Analysis of the experimental results shows that the magnetoresistance of lanthanum manganites far from the Curie temperature T{sub C} can be described quantitatively by the s-d model normally used for ferromagnets and taking into account only the exchange interaction between the spins of charge carriers and magnetic moments. These data also show that the features of lanthanum manganites responsible for colossal magnetoresistance (CMR) are manifested in a narrow temperature interval {delta}T Almost-Equal-To 20 K near T{sub C}. Our results suggest a CMR mechanism analogous to the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr-type multilayers with nanometer layer thickness. The nanostratification observed in lanthanum manganites and required for GMR can be described taking into account the spread in T{sub C} in the CMR range {delta}T.

  18. Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system.

    PubMed

    Wang, C M; Lei, X L

    2014-06-11

    We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. PMID:25932474

  19. Negative huge magnetoresistance in high-mobility 2D electron gases: DC-current dependence

    NASA Astrophysics Data System (ADS)

    Iñarrea, J.; Bockhorn, L.; Haug, R. J.

    2016-07-01

    Two-dimensional electron gases with very high mobility show a huge or giant negative magnetoresistance at low temperatures and low magnetic fields. We present an experimental and theoretical work on the influence of the applied current on the negative huge magnetoresistance of these systems. We obtain an unexpected and strong nonlinear behavior consisting in an increase of the negative huge magnetoresistance with increasing current, in other words, for increasing current the magnetoresistance collapses at small magnetic fields. This nonlinearity is explained by the subtle interplay of elastic scattering within Landau levels and between Landau levels.

  20. Switch Transcripts in Immunoglobulin Class Switching

    NASA Astrophysics Data System (ADS)

    Lorenz, Matthias; Jung, Steffen; Radbruch, Andreas

    1995-03-01

    B cells can exchange gene segments for the constant region of the immunoglobulin heavy chain, altering the class and effector function of the antibodies that they produce. Class switching is directed to distinct classes by cytokines, which induce transcription of the targeted DNA sequences. These transcripts are processed, resulting in spliced "switch" transcripts. Switch recombination can be directed to immunoglobulin G1 (IgG1) by the heterologous human metallothionein II_A promoter in mutant mice. Induction of the structurally conserved, spliced switch transcripts is sufficient to target switch recombination to IgG1, whereas transcription alone is not.

  1. Magnetoresistive sensors for angle, position, and electrical current measurement in demanding environments

    NASA Astrophysics Data System (ADS)

    Doms, Marco; Slatter, Rolf

    2014-06-01

    Nowadays, magnetoresistive (MR) sensors are used in a wide range of applications. In general, the MR-effect describes the change of the electrical resistance in an external magnetic field. MR sensors are not only used for measuring magnetic fields and rotational or linear motion, but also for non-contact switching applications and furthermore for highly dynamic current measurement. This is largely the result of increasingly complex demands on the sensors for e.g. high performance electrical drives. The sensors must not only be accurate and dynamic, but must also be robust under difficult operating conditions and exhibit very high reliability. Due to their physical working principle and their small size, MR sensors are especially suited to work in harsh environments like high or low temperature, radiation, pressure or mechanical shock. This paper describes the principle of operation, manufacturing process and benefits of MR sensors. This will be followed by a description of practical application examples from the automotive, oil and gas, renewable energy and space fields, where MR sensors are successfully applied in very small envelopes at very low /very high temperatures, under high pressure, high mechanical loading and under strong radiation.

  2. Magnetoresistive polyaniline/multi-walled carbon nanotube nanocomposites with negative permittivity.

    PubMed

    Gu, Hongbo; Guo, Jiang; He, Qingliang; Jiang, Yuan; Huang, Yudong; Haldolaarachige, Neel; Luo, Zhiping; Young, David P; Wei, Suying; Guo, Zhanhu

    2014-01-01

    Contrary to the observed positive giant magnetoresistance (GMR) in as-received multi-walled carbon nanotubes (MWNTs), pure polyaniline (PANI) synthesized with Cr(vi) as oxidant and MWNTs/PANI nanocomposites with ammonium persulfate (APS) as oxidant, a room temperature negative GMR of around -2% was reported in MWNTs/PANI nanocomposites with Cr(vi) as oxidant. Different from a frequency switch of permittivity from negative to positive in MWNTs/PANI nanocomposites with APS as oxidant, unique negative permittivity was observed in MWNTs/PANI nanocomposites with Cr(vi) as oxidant within the measured frequency range from 20 to 2 × 10(6) Hz. The obtained unique negative permittivity was explained by the plasma frequency from the Drude model, at which the permittivity changes from negative to positive and the material changes from a metamaterial to an ordinary dielectric medium. The observed positive and negative GMR behaviors in these disordered systems as verified by the temperature dependent resistivity exploration were well explained through a wave-function shrinkage model and orbital magnetoconductivity theory by calculating the changed localization length (a0). PMID:24226933

  3. Magnetization switching in a mesoscopic NiFe ring with nanoconstrictions of wire

    NASA Astrophysics Data System (ADS)

    Lu, Zhengqi; Zhou, Yun; Du, Yuqing; Wilton, D.; Pan, G.; Chen, Yifang; Cui, Zheng

    2006-04-01

    Magnetoresistance in a mesoscopic NiFe ring with nanoconstrictions of wire has been measured. For the applied field tilted from the perpendicular direction, it is shown that the applied current has an effect on the switching fields and finally the transition process due to the spin torque effect. The decrease or increase in the switching field from the vortex state to the onion state depends on the electron flow with respect to the direction of domain propagation. The magnetization in the ring exhibits only a double switching process at a low applied current. However, when the applied current is higher than the critical current density, the magnetization shows a combination of single and double switching processes. For the applied field direction perpendicular to the wire, an enhancement in magnetoresistance is obtained around zero fields at a low applied current, which is due to the domain wall trapped at nanoconstrictions. Furthermore, it is found that the magnetization in the ring goes via a single onion to onion switching process at whatever value of the applied current.

  4. Miniature intermittent contact switch

    NASA Technical Reports Server (NTRS)

    Sword, A.

    1972-01-01

    Design of electric switch for providing intermittent contact is presented. Switch consists of flexible conductor surrounding, but separated from, fixed conductor. Flexing of outside conductor to contact fixed conductor completes circuit. Advantage is small size of switch compared to standard switches.

  5. Latching relay switch assembly

    DOEpatents

    Duimstra, Frederick A.

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  6. Dual source heat pump

    DOEpatents

    Ecker, Amir L.; Pietsch, Joseph A.

    1982-01-01

    What is disclosed is a heat pump apparatus for conditioning a fluid characterized by a fluid handler and path for circulating the fluid in heat exchange relationship with a refrigerant fluid; at least two refrigerant heat exchangers, one for effecting heat exchange with the fluid and a second for effecting heat exchange between refrigerant and a heat exchange fluid and the ambient air; a compressor for efficiently compressing the refrigerant; at least one throttling valve for throttling liquid refrigerant; a refrigerant circuit; refrigerant; a source of heat exchange fluid; heat exchange fluid circulating device and heat exchange fluid circuit for circulating the heat exchange fluid in heat exchange relationship with the refrigerant; and valves or switches for selecting the heat exchangers and direction of flow of the refrigerant therethrough for selecting a particular mode of operation. The heat exchange fluid provides energy for defrosting the second heat exchanger when operating in the air source mode and also provides a alternate source of heat.

  7. Heat recovery method

    SciTech Connect

    Richarts, F.

    1985-04-16

    Heat is recovered by combining a heat transfer system including heat exchangers interconnected in a circulatory system, with a heat pump system. The heat pump system is preferably operated in accordance with the Lorenz-Principle. It is not necessary to divide the heat carrier circuit of the heat pump into two or three separate circulatory circuits. The heat carrier circuit of the heat pump can thus continue to operate unchanged even if the heat pump is switched off. For this purpose the warm heat carrier coming from a discharge fluid cooler, is heated further in a condenser of the heat pump and the cold heat carrier coming from a preheater or cooler group, is cooled further in an evaporator of the heat pump.

  8. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  9. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  10. Switching of ± 360° domain wall states in a nanoring by an azimuthal Oersted field.

    PubMed

    Pradhan, N R; Licht, A S; Li, Y; Sun, Y; Tuominen, M T; Aidala, K E

    2011-12-01

    We demonstrate magnetic switching between two 360° domain wall vortex states in cobalt nanorings, which are candidate magnetic states for robust and low power magnetoresistive random access memory (MRAM) devices. These 360° domain wall (DW) or 'twisted onion' states can have clockwise or counterclockwise circulation, the two states for data storage. Reliable switching between the states is necessary for any realistic device. We accomplish this switching by applying a circular Oersted field created by passing current through a metal atomic force microscope tip placed at the center of the ring. After initializing in an onion state, we rotate the DWs to one side of the ring by passing a current through the center, and can switch between the two twisted states by reversing the current, causing the DWs to split and meet again on the opposite side of the ring. A larger current will annihilate the DWs and create a perfect vortex state in the rings. PMID:22071779

  11. Switching of ± 360° domain wall states in a nanoring by an azimuthal Oersted field

    NASA Astrophysics Data System (ADS)

    Pradhan, N. R.; Licht, A. S.; Li, Y.; Sun, Y.; Tuominen, M. T.; Aidala, K. E.

    2011-12-01

    We demonstrate magnetic switching between two 360° domain wall vortex states in cobalt nanorings, which are candidate magnetic states for robust and low power magnetoresistive random access memory (MRAM) devices. These 360° domain wall (DW) or 'twisted onion' states can have clockwise or counterclockwise circulation, the two states for data storage. Reliable switching between the states is necessary for any realistic device. We accomplish this switching by applying a circular Oersted field created by passing current through a metal atomic force microscope tip placed at the center of the ring. After initializing in an onion state, we rotate the DWs to one side of the ring by passing a current through the center, and can switch between the two twisted states by reversing the current, causing the DWs to split and meet again on the opposite side of the ring. A larger current will annihilate the DWs and create a perfect vortex state in the rings.

  12. Method of making active magnetic refrigerant, colossal magnetostriction and giant magnetoresistive materials based on Gd-Si-Ge alloys

    DOEpatents

    Gschneidner, Jr., Karl A.; Pecharsky, Alexandra O.; Pecharsky, Vitalij K.

    2003-07-08

    Method of making an active magnetic refrigerant represented by Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4 alloy for 0.ltoreq.x.ltoreq.1.0 comprising placing amounts of the commercially pure Gd, Si, and Ge charge components in a crucible, heating the charge contents under subambient pressure to a melting temperature of the alloy for a time sufficient to homogenize the alloy and oxidize carbon with oxygen present in the Gd charge component to reduce carbon, rapidly solidifying the alloy in the crucible, and heat treating the solidified alloy at a temperature below the melting temperature for a time effective to homogenize a microstructure of the solidified material, and then cooling sufficiently fast to prevent the eutectoid decomposition and improve magnetocaloric and/or the magnetostrictive and/or the magnetoresistive properties thereof.

  13. Metal vapor arc switch electromagnetic accelerator technology

    NASA Technical Reports Server (NTRS)

    Mongeau, P. P.

    1984-01-01

    A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

  14. Magnetoresistance of quasi-Bloch-wall induced in NiFe/CoSm exchange-spring bilayers

    NASA Astrophysics Data System (ADS)

    Mibu, K.; Nagahama, T.; Ono, T.; Shinjo, T.

    1998-01-01

    The magnetoresistance (MR) originating from a magnetic structure with continuous rotation of magnetic moments was studied using soft-magnetic/hard-magnetic bilayers. The feature of the MR curves was explained with anisotropic magnetoresistance (AMR) applying to twisted magnetic structures. The giant magnetoresistance (GMR)-type effect was found to be very small compared with the AMR effect.

  15. Mechanism of the hysteretic behavior of the magnetoresistance of granular HTSCs: The universal nature of the width of the magnetoresistance hysteresis loop

    SciTech Connect

    Balaev, D. A. Dubrovskii, A. A.; Shaikhutdinov, K. A.; Popkov, S. I.; Gokhfeld, D. M.; Gokhfeld, Yu. S.; Petrov, M. I.

    2009-02-15

    The hysteretic behavior of the magnetoresistance R(H) of granular high-temperature superconductors (HTSCs) of the Y-Ba-Cu-O, Bi-Ca-Sr-Cu-O, and La-Sr-Cu-O classical systems is investigated for transport current densities lower and higher than the critical density (at H = 0). All systems exhibit universal behavior of the width of the magnetoresistance hysteresis loop: independence of transport current under identical external conditions. This means that flux trapping in HTSC grains is the main mechanism controlling the hysteretic behavior of the magnetoresistance of granular HTSCs, while pinning of Josephson vortices in the intragranular medium makes no appreciable contribution to the formation of magnetoresistance hysteresis (when transport current flows through the sample). Experimental data on relaxation of residual resistance after the action of a magnetic field also confirm this conclusion.

  16. Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride

    NASA Astrophysics Data System (ADS)

    Kang, Defen; Zhou, Yazhou; Yi, Wei; Yang, Chongli; Guo, Jing; Shi, Youguo; Zhang, Shan; Wang, Zhe; Zhang, Chao; Jiang, Sheng; Li, Aiguo; Yang, Ke; Wu, Qi; Zhang, Guangming; Sun, Liling; Zhao, Zhongxian

    2015-07-01

    The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence of superconductivity in pressurized tungsten ditelluride via high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance and alternating current magnetic susceptibility measurements. Upon increasing pressure, the positive large magnetoresistance effect is gradually suppressed and turned off at a critical pressure of 10.5 GPa, where superconductivity accordingly emerges. No structural phase transition is observed under the pressure investigated. In situ high-pressure Hall coefficient measurements at low temperatures demonstrate that elevating pressure decreases the population of hole carriers but increases that of the electron ones. Significantly, at the critical pressure, a sign change of the Hall coefficient is observed.

  17. Magnetoresistance in nanostructured Tb/Ti and Tb/Si multilayers

    SciTech Connect

    Svalov, A. V.; Kurlyandskaya, G. V.; Vas'kovskiy, V. O.; Sorokin, A. N.; Diercks, D.

    2011-01-15

    Magnetic, magnetoresistive and structural properties were studied for [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers which were prepared by rf-sputtering. The thickness of the Tb layers varied from 1.5 to 12 nm. The thickness of 2 nm nonmagnetic spacers of Ti or Si was kept constant. Both anisotropic and isotropic magnetoresistance was observed in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers. A decrease in the thickness of the terbium layers led to a decrease in the anisotropic contribution to the total magnetoresistance. The negative isotropic magnetoresistanse in [Tb/Ti]{sub n} and [Tb/Si]{sub n} multilayers can be attributed to the giant magnetoresistance (GMR) and/or high field isotropic magnetoresistance. The structure of the samples of both types enabled the existence of the GMR effect.

  18. Systematic Angular Study of Magnetoresistance in Permalloy Connected Kagome Artificial Spin Ice

    NASA Astrophysics Data System (ADS)

    Park, Jungsik; Le, Brian; Watts, Justin; Leighton, Chris; Samarth, Nitin; Schiffer, Peter

    Artificial spin ices are nanostructured two-dimensional arrays of ferromagnetic elements, where frustrated interactions lead to unusual collective magnetic behavior. Here we report a room-temperature magnetoresistance study of connected permalloy (Ni81Fe19) kagome artificial spin ice networks, wherein the direction of the applied in-plane magnetic field is systematically varied. We measure both the longitudinal and transverse magnetoresistance in these structures, and we find certain transport geometries of the network show strong angular sensitivity - even small variations in the applied field angle lead to dramatic changes of the magnetoresistance response. We also investigate the magnetization reversal of the networks using magnetic force microscopy (MFM), demonstrating avalanche behavior in the magnetization reversal. The magnetoresistance features are analyzed using an anisotropic magnetoresistance (AMR) model. Supported by the US Department of Energy. Work at the University of Minnesota was supported by Seagate Technology, NSF MRSEC, and a Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme.

  19. Superconductivity emerging from a suppressed large magnetoresistant state in tungsten ditelluride

    PubMed Central

    Kang, Defen; Zhou, Yazhou; Yi, Wei; Yang, Chongli; Guo, Jing; Shi, Youguo; Zhang, Shan; Wang, Zhe; Zhang, Chao; Jiang, Sheng; Li, Aiguo; Yang, Ke; Wu, Qi; Zhang, Guangming; Sun, Liling; Zhao, Zhongxian

    2015-01-01

    The recent discovery of large magnetoresistance in tungsten ditelluride provides a unique playground to find new phenomena and significant perspective for potential applications. The large magnetoresistance effect originates from a perfect balance of hole and electron carriers, which is sensitive to external pressure. Here we report the suppression of the large magnetoresistance and emergence of superconductivity in pressurized tungsten ditelluride via high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance and alternating current magnetic susceptibility measurements. Upon increasing pressure, the positive large magnetoresistance effect is gradually suppressed and turned off at a critical pressure of 10.5 GPa, where superconductivity accordingly emerges. No structural phase transition is observed under the pressure investigated. In situ high-pressure Hall coefficient measurements at low temperatures demonstrate that elevating pressure decreases the population of hole carriers but increases that of the electron ones. Significantly, at the critical pressure, a sign change of the Hall coefficient is observed. PMID:26203807

  20. Ultrafast nanoelectromechanical switches for VLSI power management

    NASA Astrophysics Data System (ADS)

    Venumbaka, Sri Ramya

    Power consumption is a major concern in the present chip design industry. Complementary Metal Oxide Semiconductor (CMOS) technology scaling has led to an exponential increase in the leakage power. The excessive power dissipation can result in more heat generation, which in turn increases the temperature. According to Intel's source, power density increased to a value of 1000 W/cm2 and is approaching the value which is equal to the radiation from the sun's surface (10000 W/cm2). This leads to reliability issues in nanometer-scale CMOS as Silicon starts melting at 1687K. To resolve this issue, we introduce a novel architecture to design nanoelectromechanical switches and implementation results with virtually zero leakage current, ˜1 V operation voltage, ˜1 GHz resonant frequency and nanometer-scale footprint. Microelectromechanical Switches (MEMS) have very low "on" and very high "off" resistances. Their switching voltages are usually high (5-50 V), switching speeds are usually low (1 MHz) and their footprints tend to be very large (many um2). We have designed and fabricated devices with very low actuation voltages and very high speed using tuning fork geometry compatible with conventional CMOS fabrication technologies. This unique switch geometry decreases the actuation voltage by a factor of 1.4 and doubles the switching speed. It consists of a cantilever beam that acts as a ground plane. Upon actuation, both the ground plane and the switch's main beam move towards each other that makes the center of mass stationary during switching and thus, the switching speed doubles. These tuning fork nanoelectromechanical switches can be readily implemented in Very Large Scale Integration (VLSI) circuits to manage leakage power. The thesis will describe the Nanoelectromechanical systems (NEMS) structures, their characteristics, leakage reduction techniques, reliability of the devices and piezo actuator structures to determine contact resistance and longevity of switches.

  1. Latching micro optical switch

    DOEpatents

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  2. Giant magnetoresistance effects in 5f-materials

    SciTech Connect

    Havela, L.; Sechovsky, V.; Prokes, K. |

    1995-09-01

    Very large magnetoresistance effects related to reorientation of magnetic moments were observed in a number of U-intermetallics. The resemblance to magnetic multilayers is a basis of discussion of possible mechanisms of these phenomena, in background of which is probably the strong hybridization of 5f- and conduction-electron states. A clear cut evidence of relative contributions of varied scattering rate on one side and carrier concentration on the other side can be presumably obtained from experiments on samples with controlled disorder.

  3. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    NASA Astrophysics Data System (ADS)

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong

    2015-05-01

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ˜ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ˜ 1.5% in 2 ˜ 40 K. The origin of this angular MR was also discussed.

  4. Resonant magnetoresistance in the vicinity of a phase transition

    SciTech Connect

    Atsarkin, V. A. Demidov, V. V.

    2013-01-15

    The change in the electrical conductivity of manganite films upon microwave pumping in the magnetic resonance conditions is investigated. The temperature dependence of the effect correlates with the temperature variation of colossal magnetoresistance (CMR), passing through a maximum at the Curie point. The results are interpreted using a model that assumes a decrease in the absolute value vertical bar M vertical bar of the magnetic moment of the sample under the action of magnetoresonant saturation, which leads to an increase in resistance in accordance with the CMR mechanism. Theoretical analysis based on the Landau-Lifshitz-Bloch equation confirms the correctness of this model and ensures good agreement with experiment.

  5. Nonlinear spin current and magnetoresistance of molecular tunnel junctions.

    PubMed

    Waldron, Derek; Haney, Paul; Larade, Brian; MacDonald, Allan; Guo, Hong

    2006-04-28

    We report on a theoretical study of spin-polarized quantum transport through a Ni-bezenedithiol(BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism, so that microscopic details of the molecular MTJ are taken into account from first principles. A magnetoresistance ratio of approximately 27% is found for the Ni-BDT-Ni MTJ which declines toward zero as bias voltage is increased. The spin currents are nonlinear functions of bias voltage, even changing sign at certain voltages due to specific features of the coupling between molecular states and magnetic leads. PMID:16712257

  6. Magnetoresistance of polycrystalline gadolinium with varying grain size

    SciTech Connect

    Chakravorty, Manotosh Raychaudhuri, A. K.

    2015-01-21

    In this paper, we report a study of evolution of low field magnetoresistance (MR) of Gadolinium as the grain size in the sample is changed from few microns (∼4 μm) to the nanoscopic regime (∼35 nm). The low field MR has a clear effect on varying grain size. In large grain sample (few μm), the magnetic domains are controlled by local anisotropy field determined mainly by the magnetocrystalline anisotropy. The low field MR clearly reflects the temperature dependence of the magnetocrystalline anisotropy. For decreasing gain size, the contribution of spin disorder at the grain boundary increases and enhances the local anisotropy field.

  7. Negative magnetoresistance in a low-k dielectric

    SciTech Connect

    McGowan, B. T.; Lloyd, J. R.

    2014-12-22

    We observed negative magnetoresistance in amorphous SiCOH, a low-k dielectric, applying modest magnetic fields (<150 Gauss) at room temperature. The conductivity increases with increasing magnetic field. The change in conductivity due to the applied magnetic field increases with electric field and has little or no temperature dependence over the range studied. The magnitude of the effect is independent of the orientation of magnetic field relative to the direction of current flow. The effect is attributed to spin constraints associated with double occupancy of a trap site under the assumption that trap sites which have double occupancy have lower hopping frequencies than traps that have single occupancy.

  8. Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

    SciTech Connect

    Sagar, Rizwan Ur Rehman; Saleemi, Awais Siddique; Zhang, Xiaozhong

    2015-05-07

    Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ∼ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ∼ 1.5% in 2 ∼ 40 K. The origin of this angular MR was also discussed.

  9. Magnetoresistance of galfenol-based magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  10. Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance

    NASA Astrophysics Data System (ADS)

    Tokaç, M.; Wang, M.; Jaiswal, S.; Rushforth, A. W.; Gallagher, B. L.; Atkinson, D.; Hindmarch, A. T.

    2015-12-01

    We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobalt film thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobalt film thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

  11. Ultrahigh magnetoresistance at room temperature in molecular wires.

    PubMed

    Mahato, R N; Lülf, H; Siekman, M H; Kersten, S P; Bobbert, P A; de Jong, M P; De Cola, L; van der Wiel, W G

    2013-07-19

    Systems featuring large magnetoresistance (MR) at room temperature and in small magnetic fields are attractive owing to their potential for applications in magnetic field sensing and data storage. Usually, the magnetic properties of materials are exploited to achieve large MR effects. Here, we report on an exceptionally large (>2000%), room-temperature, small-field (a few millitesla) MR effect in one-dimensional, nonmagnetic systems formed by molecular wires embedded in a zeolite host crystal. This ultrahigh MR effect is ascribed to spin blockade in one-dimensional electron transport. Its generic nature offers very good perspectives to exploit the effect in a wide range of low-dimensional systems. PMID:23828887

  12. Angular dependence of anisotropic magnetoresistance in magnetic systems

    SciTech Connect

    Zhang, Steven S.-L. Zhang, Shufeng

    2014-05-07

    Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure.

  13. Fusion-neutron effects on magnetoresistivity of copper stabilizer materials

    SciTech Connect

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-02-24

    The objective of this work is to quantify the changes which occur in the magnetoresistivity of coppers (having various purities and pretreatments, and at magnetic fields up to 12 T during the course of sequential fusion neutron irradiations at about 4/sup 0/K and anneals to room temperature. In conjunction with work in progress by Coltman and Klabunde of ORNL, the results should lead to engineering design data for the stabilizers of superconducting magnets in fusion reactors. These magnets are expected to be irradiated during reactor operation and warmed to room temperature periodically during maintenance.

  14. Damping in free layers of tunnel magneto-resistance readers

    NASA Astrophysics Data System (ADS)

    Lu, Lei; Wang, Zihui; Mead, Griffin; Kaiser, Christian; Leng, Qunwen; Wu, Mingzhong

    2014-07-01

    Damping properties in the free layers of tunnel magneto-resistance (TMR) readers were reported. The study used a free layer sample consisting of the same stacking structure as in TMR readers, involved comprehensive ferromagnetic resonance (FMR) measurements, and included numerical analysis of the FMR data. The results indicate that the free layer shows a Gilbert damping constant of 8.1 × 10-3. When the free layer is magnetized with a field which is not normal to the film plane, two-magnon scattering also occurs, although its contribution to the relaxation is at least 2.5 times smaller than the Gilbert contribution.

  15. The physical mechanism of magnetic field controlled magnetocaloric effect and magnetoresistance in bulk PrGa compound

    PubMed Central

    Zheng, X. Q.; Wu, H.; Chen, J.; Zhang, B.; Li, Y. Q.; Hu, F. X.; Sun, J. R.; Huang, Q. Z.; Shen, B. G.

    2015-01-01

    The PrGa compound shows excellent performance on the magnetocaloric effect (MCE) and magnetoresistance (MR). The physical mechanism of MCE and MR in PrGa compound was investigated and elaborated in detail on the basis of magnetic measurement, heat capacity measurement and neutron powder diffraction (NPD) experiment. New types of magnetic structure and magnetic transition are found. The results of the NPD along with the saturation magnetic moment (MS) and magnetic entropy (SM) indicate that the magnetic moments are randomly distributed within the equivalent conical surface in the ferromagnetic (FM) temperature range. PrGa compound undergoes an FM to FM transition and an FM to paramagnetic (PM) transition as temperature increases. The magnetizing process was discussed in detail and the physical mechanism of the magnetic field controlled magnetocaloric effect (MCE) and the magnetoresistance (MR) was studied. The formation of the plateau on MCE curve was explained and MR was calculated in detail on the basis of the magnetic structure and the analysis of the magnetizing process. The experimental results are in excellent agreement with the calculations. Finally, the expression of MR = β(T)X2 and its application conditions were discussed, where X is M(H)/Meff, and Meff is the paramagnetic effective moment. PMID:26455711

  16. Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi.

    PubMed

    Pavlosiuk, Orest; Kaczorowski, Dariusz; Wiśniewski, Piotr

    2015-01-01

    We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material. PMID:25778789

  17. Multiple source heat pump

    DOEpatents

    Ecker, Amir L.

    1983-01-01

    A heat pump apparatus for conditioning a fluid characterized by a fluid handler and path for circulating a fluid in heat exchange relationship with a refrigerant fluid, at least three refrigerant heat exchangers, one for effecting heat exchange with the fluid, a second for effecting heat exchange with a heat exchange fluid, and a third for effecting heat exchange with ambient air; a compressor for compressing the refrigerant; at least one throttling valve connected at the inlet side of a heat exchanger in which liquid refrigerant is vaporized; a refrigerant circuit; refrigerant; a source of heat exchange fluid; heat exchange fluid circuit and pump for circulating the heat exchange fluid in heat exchange relationship with the refrigerant; and valves or switches for selecting the heat exchangers and directional flow of refrigerant therethrough for selecting a particular mode of operation. Also disclosed are a variety of embodiments, modes of operation, and schematics therefor.

  18. Theory of the negative magnetoresistance in magnetic metallic multilayers

    SciTech Connect

    Hood, R.Q.; Falicov, L.M. |

    1993-04-01

    The Boltzman equation is solved for a system consisting of alternating ferromagnetic normal metallic layers. The in-plane conductance of the film is calculated for two configurations: successive ferromagnetic layers aligned parallel and antiparallel to each other. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by application of an extemal magnetic field. The calculation depends on geometric parameters (the thicknesses of the layers); intrinsic metal parameters (number of conduction electrons, magnetization and effective masses in the layers); bulk sample properties (conductivity relaxation times); and interface scattering properties (diffuse scattering versus potential scattering at the interfaces). It is found that a large negative magnetoresistance requires, in general, considerable asymmetry in the interface scattering for the two spin orienmtions. All qualitative features of the experiments are reproduced. Quantitative agreement can be achieved with sensible values of the parameters. The effect can be conceptually explained based on considerations of phase-space availability for an electron of a given spin orientation as it travels through the multilayer sample in the various configurations and traverses the interfaces.

  19. Tunable magnetoresistance in an asymmetrically coupled single-molecule junction.

    PubMed

    Warner, Ben; El Hallak, Fadi; Prüser, Henning; Sharp, John; Persson, Mats; Fisher, Andrew J; Hirjibehedin, Cyrus F

    2015-03-01

    Phenomena that are highly sensitive to magnetic fields can be exploited in sensors and non-volatile memories. The scaling of such phenomena down to the single-molecule level may enable novel spintronic devices. Here, we report magnetoresistance in a single-molecule junction arising from negative differential resistance that shifts in a magnetic field at a rate two orders of magnitude larger than Zeeman shifts. This sensitivity to the magnetic field produces two voltage-tunable forms of magnetoresistance, which can be selected via the applied bias. The negative differential resistance is caused by transient charging of an iron phthalocyanine (FePc) molecule on a single layer of copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltages corresponding to the alignment of sharp resonances in the filled and empty molecular states with the Cu(001) Fermi energy. An asymmetric voltage-divider effect enhances the apparent voltage shift of the negative differential resistance with magnetic field, which inherently is on the scale of the Zeeman energy. These results illustrate the impact that asymmetric coupling to metallic electrodes can have on transport through molecules, and highlight how this coupling can be used to develop molecular spintronic applications. PMID:25622229

  20. Negative longitudinal magnetoresistance in Dirac and Weyl metals

    NASA Astrophysics Data System (ADS)

    Burkov, A. A.

    2015-06-01

    It has recently been found that Dirac and Weyl metals are characterized by an unusual weak-field longitudinal magnetoresistance: large, negative, and quadratic in the magnetic field. This has been shown to arise from the chiral anomaly, i.e., nonconservation of the chiral charge in the presence of external electric and magnetic fields, oriented collinearly. In this paper we report on a theory of this effect in both Dirac and Weyl metals. We demonstrate that this phenomenon contains two important ingredients. One is the magnetic-field-induced coupling between the chiral and the total (or vector, in relativistic field theory terminology) charge densities. This arises from the Berry curvature and is present in principle whenever the Berry curvature is nonzero, i.e., is nonspecific to Dirac and Weyl metals. This coupling, however, leads to a large negative quadratic magnetoresistance only when the second ingredient is present, namely when the chiral charge density is a nearly conserved quantity with a long relaxation time. This property is specific to Dirac and Weyl metals and is realized only when the Fermi energy is close to Dirac or Weyl nodes, expressing an important low-energy property of these materials, emergent chiral symmetry.

  1. Landau levels and longitudinal magnetoresistance in generalized Weyl semimetals

    NASA Astrophysics Data System (ADS)

    Li, Xiao; Roy, Bitan

    The notion of axial anomaly is a venerable concept in quantum field theory that has received ample attention in condensed matter physics due to the discovery of Weyl materials (WSMs). In such systems Kramers non-degenerate bands touch at isolated points in the Brillouin zone that act as (anti)monopoles of Berry flux, and the monopole number (m) defines the topological invariant of the system. Although so far only simple WSMs (with m = 1) has been found in various inversion and/or time-reversal asymmetric systems, generalized Weyl semimetals with m > 1 can also be found in nature, for example double-Weyl semimetals in HgCr2Se4 and SrSi2 and triple-Weyl semimetals. In this work, we demonstrate the Landau level spectrum in generalized Weyl systems and its ramification on longitudinal magnetotransport measurements. We show that in the quantum limit generalized Weyl semimetals display negative longitudinal magnetoresistance due to the chiral anomaly. Moreover, the magnetoresistance has nontrivial dependence on the relative orientation of the external fields with the crystallographic axis, stemming from underlying anisotropic quasiparticle dispersion in the pristine system. Our theory can thus provide diagnostic tools to pin the quasiparticle properties in Weyl systems.

  2. Linear magnetoresistance in Ag2+δSe thin films

    NASA Astrophysics Data System (ADS)

    von Kreutzbruck, M.; Lembke, G.; Mogwitz, B.; Korte, C.; Janek, J.

    2009-01-01

    In the nonstoichiometric low-temperature phase of silver selenide a very small silver excess within the semiconducting silver selenide matrix in the order of 0.01% is sufficient to generate a linear magnetoresistance (LMR) of more than 300% at 5 T, which does not saturate at fields up to 60 T. Different theoretical models have been proposed to explain this unusual magnetoresistance (MR) behavior, among them a random resistor network consisting of four-terminal resistor units. According to this model the LMR and the crossover field from linear to quadratic behavior are primarily controlled by both the spatial distribution of the charge-carrier mobility and its average value, being essentially functions of the local and average compositions. Here we report measurements on silver-rich thin AgxSe films with a thickness between 20 nm and 2μm , which show an increasing average mobility in conjunction with an enhanced MR for increasing film thickness. We found a linear scaling between the size of the transverse LMR and the crossover field, as predicted by the theory. For films thinner than about 100 nm the MR with field directed in the sample plane shows a breakdown of the LMR, revealing the physical length scale of the inhomegeneities in thin AgxSe devices.

  3. Large tunneling magnetoresistance in octahedral Fe3O4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Mitra, Arijit; Barick, Barun; Mohapatra, Jeotikanta; Sharma, H.; Meena, S. S.; Aslam, M.

    2016-05-01

    We have observed large tunneling Magnetoresistance (TMR) in amine functionalized octahedral nanoparticle assemblies. Amine monolayer on the surface of nanoparticles acts as an insulating barrier between the semimetal Fe3O4 nanoparticles and provides multiple tunnel junctions where inter-granular tunneling is plausible. The tunneling magnetoresistance recorded at room temperature is 38% which increases to 69% at 180 K. When the temperature drops below 150 K, coulomb staircase is observed in the current versus voltage characteristics as the charging energy exceeds the thermal energy. A similar study is also carried out with spherical nanoparticles. A 24% TMR is recorded at room temperature which increases to 41% at 180 K for spherical particles. Mössbauer spectra reveal better stoichiometry for octahedral particles which is attainable due to lesser surface disorder and strong amine coupling at the <111> facets of octahedral Fe3O4 nanoparticles. Less stoichiometric defect in octahedral nanoparticles leads to a higher value of spin polarization and therefore larger TMR in octahedral nanoparticles.

  4. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    NASA Astrophysics Data System (ADS)

    Collaudin, Aurélie; Fauqué, Benoît; Fuseya, Yuki; Kang, Woun; Behnia, Kamran

    2015-04-01

    We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2 π /3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature) plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  5. Advanced Magnetoresistance Sensing of Rotation Rate for Biomedical Applications

    NASA Astrophysics Data System (ADS)

    Avram, Marioara; Volmer, Marius; Avram, Andrei

    2008-06-01

    We propose to build a non-Newtonian fluids viscosimeter, in order to measure the viscosity of biological fluids such as blood. The system is based on a rotating microgear wheel and a magnetoresistive sensor with a non-contacting transduction mechanism to transform the rotor rotation rate into an electrical signal. As the rotor turns, the field from this microscopic magnet will modulate the resistance of a bar of a low coercitivity material such as Permalloy, with an in-plane uniaxial magnetization, placed nearby, close to the rotor flanges. The change in resistivity provides an electrical signal with frequency proportional to the rotation rate, and hence the fluid velocity. The rotor is fabricated from polysilicon and coated with a soft magnetic material. The magnetoresistive sensor is formed of two Wheatstone bridges orientated on the X and Y axes. As the microgear wheel rotates, a tooth passing by the sensing GMR of the Wheatstone bridge changes the magnetic field, thus enabling us to measure the velocity of the gear wheel. The gear wheel has the outer diameter of 200 μm and is obtained by using the cut and refill technique. The basis for fabrication of movable parts is the use of sacrificial layers that act both as spacers and also to keep the parts attached to the silicon wafer during fabrication.

  6. Large Magnetoresistance in Nanostructured Armchair Graphene Nanoribbon Junctions

    NASA Astrophysics Data System (ADS)

    Li, Suchun; Son, Young-Woo; Quek, Su Ying

    2014-03-01

    The prospect of all-carbon nanoelectronics has motivated significant interest in the transport of electrons through graphene and graphene nanoribbon (GNR) based junctions.... The weak intrinsic spin-orbit coupling in graphene also makes graphene an attractive candidate for replacing conventional materials in spintronics applications. Several interesting spin transport properties, such as giant magnetoresistance and half-metallicity, have been predicted. Most of these predictions have centered on GNRs with zigzag atomic edges (ZGNRs). On the other hand, significant progress has been made in the controlled atomic-scale synthesis of GNRs with armchair edges (AGNRs), all with specific widths.... Yet, to date, little is known about the potential of such well-defined AGNRs in electronics or spintronics. In this work, we use first principles transport calculations to predict the electron and spin transport properties of nanostructured AGNR junctions. We predict a large magnetoresistance of ~ 900%, related to resonant transmission channels close to the Fermi energy. We gratefully acknowledge helpful discussions with YP Feng and CK Gan, funding from Singapore NRF and A*STAR, Korea MEST NRF, and HJ Choi for use of the SCARLET code (PRB 76, 155420, 2007).

  7. Imaging Ferromagnetic Tracers with a Magnetoresistive Sensors Array

    NASA Astrophysics Data System (ADS)

    Leyva, Juan A.; Carneiro, Antonio A. O.; Murta, Luís O.; Baffa, O.

    2006-09-01

    The aim of this work was to study the feasibility to obtain images from a distribution of ferromagnetic tracers using a magnetoresistive multichannel sensor array (MRA). A magnetic imaging system formed by a linear array composed of 12 magnetoresistive sensors (Honeywell HMC 1001) was constructed covering a scanning area of (16×18) cm2. The signal was pre-processed for off-set correction and interpolation to generate a matrix of (256×256). The point spread function of the MRA was evaluated and the sensors were spaced accordingly. The magnetic images were generated by mapping the response of the MRA at short distances from the presence of a magnetite powder dispersed in planar phantoms with different shapes. The phantoms were magnetized by a pulse field of approximately 80 mT produced by a Helmholtz coil. Using the Wiener filtering, the magnetic source images were obtained. We conclude that this biomagnetic method can be successfully used to generate planar functional images of the gastrointestinal tract using magnetic markers in the near field.

  8. Apollo Ring Optical Switch

    SciTech Connect

    Maestas, J.H.

    1987-03-01

    An optical switch was designed, built, and installed at Sandia National Laboratories in Albuquerque, New Mexico, to facilitate the integration of two Apollo computer networks into a single network. This report presents an overview of the optical switch as well as its layout, switch testing procedure and test data, and installation.

  9. Triggered plasma opening switch

    SciTech Connect

    Mendel, C W

    1988-02-23

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  10. Triggered plasma opening switch

    DOEpatents

    Mendel, Clifford W.

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  11. Nanoionic switching in metal oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Ielmini, Daniele

    2013-03-01

    Ion migration in oxide nanostructures is a key process in information storage technologies, where the logic data are stored as nanoscale conductive filaments. Due to the inherently nanoscale size of the ionic switching location (few cubic nanometers), the local electric field and current density induce extremely high temperatures as a result of Joule heating. To develop and design advanced nanoionic materials and devices with improved performance and reliability, the ion migration phenomena in metal oxides must be carefully understood and modeled. This talk will address the modeling of ionic migration and the consequent switching in HfOx layers of RRAM devices. The model solves drift/diffusion equations for thermally-activated hopping of positive ion, such as oxygen vacancies (VO+)and metal cations (Hf+) , in presence of intense Joule heating and electric field. The impact of the ion distribution on the local conductivity is described physics-based models of defect-assisted electronic conduction in semiconductors. Microscopic parameters, such as the energy barrier for ion hopping, are directly inferred from the experimental switching kinetics at variable voltages. The simulation results picture the filament growth/depletion with time and account for the observed switching characteristics, such as the progressive opening of a depleted gap and the possibility of electrode-to-electrode migration of ions. Finally, new phenomena, such as switching variability at atomic-size filaments and stress-induced symmetric switching, will be discussed.

  12. Theory of magnetoresistance due to lattice dislocations in face-centred cubic metals

    NASA Astrophysics Data System (ADS)

    Bian, Q.; Niewczas, M.

    2016-06-01

    A theoretical model to describe the low temperature magneto-resistivity of high purity copper single and polycrystals containing different density and distribution of dislocations has been developed. In the model, magnetoresistivity tensor is evaluated numerically using the effective medium approximation. The anisotropy of dislocation-induced relaxation time is considered by incorporating two independent energy bands with different relaxation times and the spherical and cylindrical Fermi surfaces representing open, extended and closed electron orbits. The effect of dislocation microstructure is introduced by means of two adjustable parameters corresponding to the length and direction of electron orbits in the momentum space, which permits prediction of magnetoresistance of FCC metals containing different density and distribution of dislocations. The results reveal that dislocation microstructure influences the character of the field-dependent magnetoresistivity. In the orientation of the open orbits, the quadratic variation in magnetoresistivity changes to quasi-linear as the density of dislocations increases. In the closed orbit orientation, dislocations delay the onset of magnetoresistivity saturation. The results indicate that in the open orbit orientations of the crystals, the anisotropic relaxation time due to small-angle dislocation scattering induces the upward deviation from Kohler's rule. In the closed orbit orientations Kohler's rule holds, independent of the density of dislocations. The results obtained with the model show good agreement with the experimental measurements of transverse magnetoresistivity in deformed single and polycrystal samples of copper at 2 K.

  13. REMOTE CONTROLLED SWITCHING DEVICE

    DOEpatents

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  14. A Wireless Magnetoresistive Sensing System for an Intraoral Tongue-Computer Interface

    PubMed Central

    Park, Hangue; Kiani, Mehdi; Lee, Hyung-Min; Kim, Jeonghee; Block, Jacob; Gosselin, Benoit; Ghovanloo, Maysam

    2015-01-01

    Tongue drive system (TDS) is a tongue-operated, minimally invasive, unobtrusive, and wireless assistive technology (AT) that infers users’ intentions by detecting their voluntary tongue motion and translating them into user-defined commands. Here we present the new intraoral version of the TDS (iTDS), which has been implemented in the form of a dental retainer. The iTDS system-on-a-chip (SoC) features a configurable analog front-end (AFE) that reads the magnetic field variations inside the mouth from four 3-axial magnetoresistive sensors located at four corners of the iTDS printed circuit board (PCB). A dual-band transmitter (Tx) on the same chip operates at 27 and 432 MHz in the Industrial/Scientific/Medical (ISM) band to allow users to switch in the presence of external interference. The Tx streams the digitized samples to a custom-designed TDS universal interface, built from commercial off-the-shelf (COTS) components, which delivers the iTDS data to other devices such as smartphones, personal computers (PC), and powered wheelchairs (PWC). Another key block on the iTDS SoC is the power management integrated circuit (PMIC), which provides individually regulated and duty-cycled 1.8 V supplies for sensors, AFE, Tx, and digital control blocks. The PMIC also charges a 50 mAh Li-ion battery with constant current up to 4.2 V, and recovers data and clock to update its configuration register through a 13.56 MHz inductive link. The iTDS SoC has been implemented in a 0.5-μm standard CMOS process and consumes 3.7 mW on average. PMID:23853258

  15. Giant magnetoresistance in the cluster glass regime of Co-Ga alloys

    NASA Astrophysics Data System (ADS)

    Mohammad Yasin, Sk; Saha, Ritwik; Srinivas, V.; Kasiviswanathan, S.; Nigam, A. K.

    2016-05-01

    A detailed study of low temperature electrical transport properties of CoxGa100-x (x = 54, 55.5, 57) alloy has been carried out. The origin of the resistivity anomalies and correlation between magnetic and electrical transport properties are identified through an elaborate analysis. The weak localization and enhanced electron-electron interaction effects partially support the electrical transport properties of the system. Further, the observed magnetoresistance can be well represented by localized model along with quantum corrections. The low temperature magnetoresistance value near critical composition is comparable to that reported in giant magnetoresistance materials.

  16. Enhancement of tunnel magnetoresistance in magnetic tunnel junction by a superlattice barrier

    SciTech Connect

    Chen, C. H.; Hsueh, W. J.

    2014-01-27

    Tunnel magnetoresistance of magnetic tunnel junction improved by a superlattice barrier composed of alternate layers of a nonmagnetic metal and an insulator is proposed. The forbidden band of the superlattice is used to predict the low transmission range in the superlattice barrier. By forbidding electron transport in the anti-parallel configuration, the tunnel magnetoresistance is enhanced in the superlattice junction. The results show that the tunnel magnetoresistance ratio for a superlattice magnetic tunnel junction is greater than that for traditional single or double barrier junctions.

  17. The magnetization process and magnetoresistance of exchange-spring bilayer systems

    NASA Astrophysics Data System (ADS)

    Nagahama, T.; Mibu, K.; Shinjo, T.

    1998-01-01

    A perfectly reversible magnetization process was observed in NiFe/CoSm bilayers. During this process, the magnetic moments in the soft magnetic layer (NiFe) are pinned at the interface with the hard magnetic layer (CoSm), so that the direction of the magnetic moment distributes successively like a Bloch wall. The characteristic reversible magnetization process is explained by an atomic layer model. The magnetoresistance also exhibits a reversible change reflecting the magnetization process. The basic feature of the reversible magnetoresistance curve is understood to be anisotropic magnetoresistance.

  18. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    NASA Astrophysics Data System (ADS)

    Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

    2016-06-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.

  19. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    PubMed Central

    Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

    2016-01-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. PMID:27279433

  20. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

    PubMed

    Kriegner, D; Výborný, K; Olejník, K; Reichlová, H; Novák, V; Marti, X; Gazquez, J; Saidl, V; Němec, P; Volobuev, V V; Springholz, G; Holý, V; Jungwirth, T

    2016-01-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets. PMID:27279433

  1. Magnetoresistance in i-R-Cd icosahedral quasicrystals (R=Y, Gd)

    NASA Astrophysics Data System (ADS)

    Saraswat, Garima; Popović, Dragana; Kong, Tai; Bud'Ko, Sergey L.; Canfield, Paul C.

    We use magnetoresistance (MR) to probe the electronic properties of the recently discovered binary quasicrystals (QCs) i-Gd-Cd and i-Y-Cd, with and without local magnetic moments, respectively. DC magnetization has revealed spin-glass freezing in i-Gd-Cd at a temperature Tf = 4 . 6 K. MR was measured at 1 . 6 <= T (K) <= 300 and in magnetic fields H up to 12 T. The most interesting behavior is observed in i-Gd-Cd, in which the MR exhibits thermo-magnetic history dependence at low T. In particular, there is a clear difference between the ZFC and FC values of the low-field positive MR. In contrast, the i-Y-Cd MR does not depend on magnetic history. The onset of the history dependent MR at T ~ 20 K >Tf , when the QC with local magnetic moments is cooled in a high field of 12 T, may be related to the formation of magnetic clusters above Tf, as inferred from the magnetization and specific heat studies. Possible mechanisms responsible for the striking coupling between charge transport and local magnetic environment observed in the MR will be discussed. Work at the NHMFL supported by NSF Grant No. DMR-1307075, the NSF Cooperative Agreement No. DMR-0654118 and the State of Florida. Work at Ames Lab (TK, SLB and PCC) supported by the U.S. D.O.E / B.E.S under Contract No. DE-AC02-07CH11358.

  2. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

    SciTech Connect

    Xu, Lei; Ma, Zhongshui; Wei, Dan

    2015-01-14

    The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

  3. Switching-type regulator circuit has increased efficiency

    NASA Technical Reports Server (NTRS)

    Clapp, W. M.

    1967-01-01

    Switching series regulator circuit uses an inductive network to feed most of the current applied to the control circuit to the load. This circuit eliminates resistive losses and the need for heat sinks.

  4. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

    PubMed Central

    Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

    2015-01-01

    The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

  5. Gamma Irradiation of Magnetoresistive Sensors for Planetary Exploration

    PubMed Central

    Sanz, Ruy; Fernández, Ana B.; Dominguez, Jose A.; Martín, Boris; Michelena, Marina D.

    2012-01-01

    A limited number of Anisotropic Magnetoresistive (AMR) commercial-off-the-shelf (COTS) magnetic sensors of the HMC series by Honeywell, with and without integrated front-end electronics, were irradiated with gamma rays up to a total irradiation dose of 200 krad (Si), following the ESCC Basic Specification No. 22900. Due to the magnetic cleanliness required for these tests a special set-up was designed and successfully employed. Several parameters of the sensors were monitored during testing and the results are reported in this paper. The authors conclude that AMR sensors without front-end electronics seem to be robust against radiation doses of up to 200 krad (Si) with a dose rate of 5 krad (Si)/hour and up to a resolution of tens of nT, but sensors with an integrated front-end seem to be more vulnerable to radiation. PMID:22666039

  6. Anomalously large anisotropic magnetoresistance in a perovskite manganite

    PubMed Central

    Li, Run-Wei; Wang, Huabing; Wang, Xuewen; Yu, X. Z.; Matsui, Y.; Cheng, Zhao-Hua; Shen, Bao-Gen; Plummer, E. Ward; Zhang, Jiandi

    2009-01-01

    The signature of correlated electron materials (CEMs) is the coupling between spin, charge, orbital and lattice resulting in exotic functionality. This complexity is directly responsible for their tunability. We demonstrate here that the broken symmetry, through cubic to orthorhombic distortion in the lattice structure in a prototype manganite single crystal, La0.69Ca0.31MnO3, leads to an anisotropic magneto-elastic response to an external field, and consequently to remarkable magneto-transport behavior. An anomalous anisotropic magnetoresistance (AMR) effect occurs close to the metal-insulator transition (MIT) in the system, showing a direct correlation with the anisotropic field-tuned MIT in the system and can be understood by means of a simple phenomenological model. A small crystalline anisotropy stimulates a “colossal” AMR near the MIT phase boundary of the system, thus revealing the intimate interplay between magneto- and electronic-crystalline couplings. PMID:19706504

  7. Magnetoresistance of galfenol-based magnetic tunnel junction

    SciTech Connect

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Eddrief, M.; Marangolo, M.

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  8. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor

    NASA Astrophysics Data System (ADS)

    Brown, P.; Whiteside, B. J.; Beek, T. J.; Fox, P.; Horbury, T. S.; Oddy, T. M.; Archer, M. O.; Eastwood, J. P.; Sanz-Hernández, D.; Sample, J. G.; Cupido, E.; O'Brien, H.; Carr, C. M.

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45 000 nT ambient field.

  9. Magnetoresistance measurement of permalloy thin film rings with triangular fins

    NASA Astrophysics Data System (ADS)

    Lai, Mei-Feng; Hsu, Chia-Jung; Liao, Chun-Neng; Chen, Ying-Jiun; Wei, Zung-Hang

    2010-01-01

    Magnetization reversals in permalloy rings controlled by nucleation sites using triangular fins at the same side and diagonal with respect to the field direction are demonstrated by magnetoresistance measurement and micromagnetic simulation. In the ring with triangular fins at the same side, there exists two-step reversal from onion to flux-closure state (or vortex state) and then from flux-closure (or vortex state) to reverse onion state; in the ring with diagonal triangular fins, one-step reversal occurs directly from onion to reverse onion state. The reversal processes are repeatable and controllable in contrast to an ideal ring without triangular fins where one-step and two-step reversals occur randomly in sweep-up and sweep-down processes.

  10. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, Johannes J.; Thomas, Gareth; Huetten, Andreas R.

    1998-01-01

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties.

  11. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, Johannes J.; Thomas, Gareth; Huetten, Andreas R.

    1999-01-01

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties.

  12. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, J.J.; Thomas, G.; Huetten, A.R.

    1998-10-20

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by (a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and (b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties. 7 figs.

  13. Giant magnetoresistive heterogeneous alloys and method of making same

    DOEpatents

    Bernardi, J.J.; Thomas, G.; Huetten, A.R.

    1999-03-16

    The inventive material exhibits giant magnetoresistance upon application of an external magnetic field at room temperature. The hysteresis is minimal. The inventive material has a magnetic phase formed by eutectic decomposition. The bulk material comprises a plurality of regions characterized by (a) the presence of magnetic lamellae wherein the lamellae are separated by a distance smaller than the mean free path of the conduction electrons, and (b) a matrix composition having nonmagnetic properties that is interposed between the lamellae within the regions. The inventive, rapidly quenched, eutectic alloys form microstructure lamellae having antiparallel antiferromagnetic coupling and give rise to GMR properties. The inventive materials made according to the inventive process yielded commercially acceptable quantities and timeframes. Annealing destroyed the microstructure lamellae and the GMR effect. Noneutectic alloys did not exhibit the antiparallel microstructure lamellae and did not possess GMR properties. 7 figs.

  14. Low-field giant magnetoresistance in layered magnetic rings

    NASA Astrophysics Data System (ADS)

    Castaño, F. J.; Morecroft, D.; Ross, C. A.

    2006-12-01

    The low-field magnetization reversal of NiFe/Cu/Co multilayer mesoscopic elliptical and circular rings has been investigated via magnetoresistance measurements and micromagnetic modeling. Minor loop measurements, in which the NiFe layer is cycled for a fixed Co layer configuration, show qualitatively different behavior depending on whether the Co layer is present in a vortex or an onion state. Micromagnetic simulations are in excellent agreement with the experimental data and confirm the dominant role played by magnetostatic interactions between the Co and NiFe layers, as a result of stray fields from the domain walls present in the layers. Multiple stable remanent resistance levels can be obtained by cycling the rings at modest fields.

  15. Raman scattering investigation of large positive magnetoresistance material WTe2

    NASA Astrophysics Data System (ADS)

    Kong, W.-D.; Wu, S.-F.; Richard, P.; Lian, C.-S.; Wang, J.-T.; Yang, C.-L.; Shi, Y.-G.; Ding, H.

    2015-02-01

    We have performed polarized Raman scattering measurements on WTe2, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A1 phonon modes and 2 A2 phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C2v point group symmetry attributed to WTe2. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A1 phonon mode at 160.6 cm-1 shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.

  16. Correlation of crystal quality and extreme magnetoresistance of WTe2

    NASA Astrophysics Data System (ADS)

    Ali, Mazhar N.; Schoop, Leslie; Xiong, Jun; Flynn, Steven; Gibson, Quinn; Hirschberger, Max; Ong, N. P.; Cava, R. J.

    2015-06-01

    High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75 million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B 2 law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be 167,000 \\text{cm}^2/\\text{Vs} at 2 K. A correlation of RRR, MR ratio and average carrier mobility (μ\\textit{avg}) is found with the cooling rate during the flux growth.

  17. Theory of spin Hall magnetoresistance (SMR) and related phenomena

    NASA Astrophysics Data System (ADS)

    Chen, Yan-Ting; Takahashi, Saburo; Nakayama, Hiroyasu; Althammer, Matthias; Goennenwein, Sebastian T. B.; Saitoh, Eiji; Bauer, Gerrit E. W.

    2016-03-01

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.

  18. Interlayer transverse magnetoresistance in the presence of an anisotropic pseudogap

    NASA Astrophysics Data System (ADS)

    Smith, M. F.; McKenzie, Ross H.

    2009-12-01

    The interlayer magnetoresistance of a quasi-two-dimensional layered metal with a d -wave pseudogap is calculated semiclassically. An expression for the interlayer resistivity as a function of the strength and direction of the magnetic field, the magnitude of the pseudogap, temperature, and scattering rate is obtained. We find that the pseudogap, by introducing low-energy nodal quasiparticle contours, smooths the dependence on field direction in a manner characteristic of its anisotropy. We thus propose that interlayer resistance measurements under a strong field of variable orientation can be used to fully characterize an anisotropic pseudogap. The general result is applied to the case of a magnetic field parallel to the conducting layers using a model band structure appropriate for overdoped Tℓ2201 .

  19. Space magnetometer based on an anisotropic magnetoresistive hybrid sensor.

    PubMed

    Brown, P; Whiteside, B J; Beek, T J; Fox, P; Horbury, T S; Oddy, T M; Archer, M O; Eastwood, J P; Sanz-Hernández, D; Sample, J G; Cupido, E; O'Brien, H; Carr, C M

    2014-12-01

    We report on the design and development of a low resource, dual sensor vector magnetometer for space science applications on very small spacecraft. It is based on a hybrid device combining an orthogonal triad of commercial anisotropic magnetoresistive (AMR) sensors with a totem pole H-Bridge drive on a ceramic substrate. The drive enables AMR operation in the more sensitive flipped mode and this is achieved without the need for current spike transmission down a sensor harness. The magnetometer has sensitivity of better than 3 nT in a 0-10 Hz band and a total mass of 104 g. Three instruments have been launched as part of the TRIO-CINEMA space weather mission, inter-calibration against the International Geomagnetic Reference Field model makes it possible to extract physical signals such as field-aligned current deflections of 20-60 nT within an approximately 45,000 nT ambient field. PMID:25554336

  20. Longitudinal Magnetoresistance and “Chiral" Coupling in Silver Chalcogenides

    NASA Astrophysics Data System (ADS)

    Xu, Jie; Zhang, Duan-Ming

    2011-03-01

    A complex longitudinal magnetoresistance (MR//) effect in the non-stoichiometric silver chalcogenides (include the silver selenide and telluride) has been found, however the mechanism for the MR// effect is not clear now. In this work, a new random resistor network for MR// effect is proposed based on the experimental observation. The network is constructed from six-terminal resistor units and the mobility of carries within the network has a Gaussian distribution. Considering the non-zero transverse-longitudinal coupling in materials, the resistance matrix of the six-terminal resistor unit is modified. It is found that the material has the “chiral" transverse-longitudinal couplings, which is suggested a main reason for the complex MR// effect. The model predictions are compared with the experimental results. A three dimension (3D) visualization of current flow within the network demonstrates the “current jets" phenomenon in the thickness of materials clearly.

  1. On-chip magnetoresistive detection of resonance in microcantilevers

    NASA Astrophysics Data System (ADS)

    Patil, S. B.; Guedes, A.; Freitas, P. P.; Cardoso, S.; Chu, V.; Conde, J. P.

    2009-07-01

    Magnetoresistive spin-valve sensors were used to provide on-chip detection of the mechanical resonance of a thin silicon microelectromechanical systems cantilever. The spin-valve sensor was placed underneath the free end of the cantilever. A CoCrPt thin-film permanent magnet was placed on top of the amorphous silicon/Al cantilever. The cantilever was electrostatically actuated and its deflection creates a change in the magnetic field that can be sensed by the spin-valve sensor. The resonance frequency of the structure in the megahertz range is detected by the measurement of the spin-valve sensor output. Minimum deflection detection limit is determined to be 0.06 Å/Hz1/2.

  2. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  3. Spin-valley filter and tunnel magnetoresistance in asymmetrical silicene magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Wang, Dali; Huang, Zeyuan; Zhang, Yongyou; Jin, Guojun

    2016-05-01

    The spin and valley transports and tunnel magnetoresistance are studied in a silicene-based asymmetrical magnetic tunnel junction consisting of a ferromagnetic tunnel barrier, sandwiched between a ferromagnetic electrode and a normal electrode. For such an asymmetrical silicene junction, a general formulism is established. The numerical results show that the spin-valley resolved conductances strongly depend on the magnetization orientation of the ferromagnetic tunnel barrier, and the fully spin-valley polarized current can be realized by tuning a perpendicularly applied electric field. We also find that the tunnel magnetoresistance in this case can be effectively modified by the external electric field when the conductance is fully spin-valley polarized. In particular, the exchange field in the ferromagnetic electrode can further substantially enhance the tunnel magnetoresistance of the system. Our work provides a practical method for electric and magnetic manipulation of valley/spin polarization and tunnel magnetoresistance.

  4. Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2 : Quantum Oscillation Study

    NASA Astrophysics Data System (ADS)

    Cai, P. L.; Hu, J.; He, L. P.; Pan, J.; Hong, X. C.; Zhang, Z.; Zhang, J.; Wei, J.; Mao, Z. Q.; Li, S. Y.

    2015-07-01

    The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25 ×105% under ambient pressure to 7.47 ×103% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2 .

  5. Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

    NASA Astrophysics Data System (ADS)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

    2016-06-01

    Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe2, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 104% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (˜1.4 × 104%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.

  6. Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study.

    PubMed

    Cai, P L; Hu, J; He, L P; Pan, J; Hong, X C; Zhang, Z; Zhang, J; Wei, J; Mao, Z Q; Li, S Y

    2015-07-31

    The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×10(5)% under ambient pressure to 7.47×10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2. PMID:26274436

  7. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling

    NASA Astrophysics Data System (ADS)

    Vélez, Saül; Golovach, Vitaly N.; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E.; Bergeret, F. Sebastian; Casanova, Fèlix

    2016-01-01

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt /Y3Fe5O12 bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  8. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    PubMed

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-01

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling. PMID:26799036

  9. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    SciTech Connect

    Zhang, Z. H. Bai, Lihui; Hu, C.-M.; Hemour, S.; Wu, K.; Fan, X. L.; Xue, D. S.; Houssameddine, D.

    2015-03-15

    The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  10. Comparison of a prototype magnetoresistive biosensor to standard fluorescent DNA detection.

    PubMed

    Schotter, J; Kamp, P B; Becker, A; Pühler, A; Reiss, G; Brückl, H

    2004-05-15

    We present a comparative analysis of a magnetoresistive biosensor to standard fluorescent DNA detection. The biosensor consists of giant magnetoresistive (GMR) type Cu/Ni(80)Fe(20) multilayers in the second antiferromagnetic coupling maximum. Each of the 206 elements of the magnetoresistive biosensor is patterned into a spiral-shaped line that can cover the area of a typical DNA spot (70 microm diameter). The probe DNA is assembled on top of the sensor elements in different concentrations ranging from 16 pg/microl to 10 ng/microl. Complementary biotin-labeled analyte DNA is hybridized to the probe DNA at a concentration of 10 ng/microl. A number of different commercially available magnetic microspheres are investigated to determine the most appropriate markers. The experimental comparison shows that the relative sensitivity of the magnetoresistive biosensor is superior to the fluorescent detection at low probe DNA concentrations. PMID:15046745

  11. Effective switching frequency multiplier inverter

    SciTech Connect

    Su, Gui-Jia; Peng, Fang Z.

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  12. Electric field modulation of tunneling anisotropic magnetoresistance in tunnel junctions with antiferromagnetic electrodes

    NASA Astrophysics Data System (ADS)

    Goto, Minori; Nawaoka, Kohei; Miwa, Shinji; Hatanaka, Shohei; Mizuochi, Norikazu; Suzuki, Yoshishige

    2016-08-01

    We present electric field modulation of tunneling anisotropic magnetoresistance (TAMR) in MnIr|MgO|Ta tunnel junctions. TAMR enables direct observation of the antiferromagnetic spin direction at the MnIr|MgO interface. We found that the shape of magnetoresistance (MR) curve can be modulated by an electric field, which can be explained by electric field modulation of the interfacial magnetic anisotropy at MnIr|MgO.

  13. Magnetoresistance studies of multilayers including hard magnetic CoSm layers

    NASA Astrophysics Data System (ADS)

    Mibu, K.; Nagahama, T.; Shinjo, T.

    1996-04-01

    Cobalt-samarium alloy films were prepared by alternate deposition of Co and Sm in the presence of an external magnetic field to obtain thin magnetic layers with large in-plane coercive fields. These anisotropic CoSm layers were used as hard magnetic layers of noncoupled-type magnetoresistance multilayers or as pinning layers of spin-valve structures. Large magnetoresistance changes up to 4.6% were attained in the CoSm/Co/Cu/NiFe system.

  14. Thermally actuated thermionic switch

    DOEpatents

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  15. Thermally actuated thermionic switch

    DOEpatents

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  16. AC magnetohydrodynamic microfluidic switch

    SciTech Connect

    Lemoff, A V; Lee, A P

    2000-03-02

    A microfluidic switch has been demonstrated using an AC Magnetohydrodynamic (MHD) pumping mechanism in which the Lorentz force is used to pump an electrolytic solution. By integrating two AC MHD pumps into different arms of a Y-shaped fluidic circuit, flow can be switched between the two arms. This type of switch can be used to produce complex fluidic routing, which may have multiple applications in {micro}TAS.

  17. Solid state switch

    DOEpatents

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  18. Tunable angular-dependent magnetoresistance correlations in magnetic films and their implications for spin Hall magnetoresistance analysis

    NASA Astrophysics Data System (ADS)

    Zou, L. K.; Zhang, Y.; Gu, L.; Cai, J. W.; Sun, L.

    2016-02-01

    Angular-dependent magnetoresistance (MR) is considered to be intrinsic to spintronic materials, represented by the classical anisotropic MR (AMR) phenomenon and the recently emerged spin Hall MR (SMR). So far, isotropic AMR, AMR with geometric size effect and interfacial effect, and SMR have been treated separately to explain distinct MR correlations observed in various systems. Current study shows all four types of MR correlations can be reproduced in Fe thin films depending on the film thickness, texture, interface, and morphology. Results suggest previous explanations of the thin-film MR correlations are incomplete and it is inappropriate to use a specific MR angular-dependent correlation as the sole criterion in determining the origin of AMR or ascertaining the exclusive existence of SMR.

  19. Alarm toe switch

    DOEpatents

    Ganyard, Floyd P.

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  20. Anisotropic magnetoresistance and current-perpendicular-to-plane giant magnetoresistance in epitaxial NiMnSb-based multilayers

    NASA Astrophysics Data System (ADS)

    Kwon, B.; Sakuraba, Y.; Sukegawa, H.; Li, S.; Qu, G.; Furubayashi, T.; Hono, K.

    2016-01-01

    We fabricated (001)-oriented C1b-NiMnSb epitaxial films on MgO substrate by a magnetron sputtering system and systematically investigated the structure, magnetic property, and anisotropic magnetoresistance (AMR) effect. NiMnSb film was deposited using a stoichiometric NiMnSb target which has Mn-deficient (Mn ˜ 28.7 at. %) off-stoichiometric composition ratio. We have investigated bulk spin-polarization in NiMnSb films by measuring AMR on the basis of recent study for half-metallic L21-Heusler compounds. Although the negative sign of AMR ratio, which is indicative of half-metallic nature, was observed in the single layer NiMnSb films, the magnitude of AMR ratio (-0.10% at RT) was about half of the largest value reported for half-metallic L21-Heusler compounds. The current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) devices of NiMnSb/Ag/NiMnSb show MR ratio of 13.2% at 10 K and 4.2% at 300 K, which is higher than the previous result for NiMnSb/Cu/NiMnSb CPP-GMR devices [Caballero et al., J. Magn. Magn. Mater. 198-199, 55 (1999)], but much less than the CPP-GMR using L21-Heusler electrodes. The reduction of intrinsic bulk spin-polarization originating from the Mn-deficiency in NiMnSb layer is expected to be the main reason for small MR values.

  1. Quantum and classical contributions to linear magnetoresistance in topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib

    2016-05-01

    Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi2-xSbxTe3-ySey thin films grown by pulsed laser deposition technique. Thin films of Bi2-xSbxTe3-ySey were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.

  2. Large magnetoresistance induced by crystallographic defects in FexTaS2 single crystals

    NASA Astrophysics Data System (ADS)

    Chen, Chih-Wei; Morosan, Emilia; Morosan's group Team

    The search for the materials that show large magnetoresistance and the mechanisms that induce it remains challenging in both experimental and theoretical aspects. The giant magnetoresistance in one class of materials, ferromagnetic conductors, is generally attributed to the misalignments of magnetic moments, which cause spin disorder scattering. Recently, very large magnetoresistance (>60 %) was discovered in the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 [Phys. Rev. B 91, 054426(2015)]. The mechanism that led to this large magnetoresistance was suggested to be due to the deviation of Fe concentration from commensurate values (1/4 or 1/3), which caused magnetic moments' misalignments. Here we report a study of FexTaS2 crystals with x close to the commensurate values. Our results qualitatively demonstrate that crystallographic defects significantly affect magnetoresistance in FexTaS2. This provides a way to search for large magnetoresistance in more intercalated transition metal dichalcogenides. This work is supported by the Department of Defense PECASE.

  3. Intelligent switches of integrated lightwave circuits with core telecommunication functions

    NASA Astrophysics Data System (ADS)

    Izhaky, Nahum; Duer, Reuven; Berns, Neil; Tal, Eran; Vinikman, Shirly; Schoenwald, Jeffrey S.; Shani, Yosi

    2001-05-01

    We present a brief overview of a promising switching technology based on Silica on Silicon thermo-optic integrated circuits. This is basically a 2D solid-state optical device capable of non-blocking switching operation. Except of its excellent performance (insertion loss<5dB, switching time<2ms...), the switch enables additional important build-in functionalities. It enables single-to- single channel switching and single-to-multiple channel multicasting/broadcasting. In addition, it has the capability of channel weighting and variable output power control (attenuation), for instance, to equalize signal levels and compensate for unbalanced different optical input powers, or to equalize unbalanced EDFA gain curve. We examine the market segments appropriate for the switch size and technology, followed by a discussion of the basic features of the technology. The discussion is focused on important requirements from the switch and the technology (e.g., insertion loss, power consumption, channel isolation, extinction ratio, switching time, and heat dissipation). The mechanical design is also considered. It must take into account integration of optical fiber, optical planar wafer, analog electronics and digital microprocessor controls, embedded software, and heating power dissipation. The Lynx Photon.8x8 switch is compared to competing technologies, in terms of typical market performance requirements.

  4. Magnetostatic effects on switching in small magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.; Li, Mingen; Chien, C.-L.; Majetich, Sara A.

    2016-01-01

    Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior of the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.

  5. Automatic thermal control switches. [for use in Space Shuttle borne Get Away Special container

    NASA Technical Reports Server (NTRS)

    Wing, L. D.

    1982-01-01

    Two automatic, flexible connection thermal control switches have been designed and tested in a thermal vacuum facility and in the Get Away Special (GAS) container flown on the third Shuttle flight. The switches are complementary in that one switch passes heat when the plate on which it is mounted exceeds some selected temperature and the other switch will pass heat only when the mounting plate temperature is below the selected value. Both switches are driven and controlled by phase-change capsule motors and require no other power source or thermal sensors.

  6. Asymmetrical Switch Costs in Children

    ERIC Educational Resources Information Center

    Ellefson, Michelle R.; Shapiron, Laura R.; Chater, Nick

    2006-01-01

    Switching between tasks produces decreases in performance as compared to repeating the same task. Asymmetrical switch costs occur when switching between two tasks of unequal difficulty. This asymmetry occurs because the cost is greater when switching to the less difficult task than when switching to the more difficult task. Various theories about…

  7. Silicon oxynitride-based integrated optical switch

    NASA Astrophysics Data System (ADS)

    Rehder, G.; Stochero, M.; Alayo, M. I.

    2009-02-01

    In this work we describe the fabrication and characterization of MOEMS-based integrated optical switches with improved ON/OFF performance. These structures consist of silicon oxynitride-based optical waveguides, through which a light beam of 633-nm can be conducted, and mobile thermo-electro actuated cantilevers, which form part of the waveguide and can work as ON-OFF switches for the laser. These switches allow the laser light to pass or block the laser light when activated electrically. The cantilevers are fabricated by freeing regions of the waveguide, which is done by front side micromachining the silicon wafer used as substrate. Also, they are actuated electrically through the heating of a metallic resistance positioned in the device, where the applied current heats the cantilevers and, due to the difference in thermal expansion coefficients of the constituent materials, it is possible to produce a controlled motion proportional to the heating current. Therefore, the switches can be electrically polarized in on/off cycles allowing or blocking the light through the waveguide, similar to logic "1's" and "0's".

  8. Optical switching with a thermochromic film

    NASA Astrophysics Data System (ADS)

    Men, Liqiu; Chen, Qiying

    2007-02-01

    In this article, optical switching effect of a thermochromic thin film is reported. The transmittance of the film increased from 0.64 at 120°C to 0.96 at 200°C indicating strong temperature dependence for its optical properties. The temperature dependence of the optical properties was found to be reversible during the heating and cooling processes. The possibility to reduce the size of the laser beam with the nonlinear optical switching effect of the thermochromic film is discussed.

  9. Reversible Chemisorption Gas-Gap Thermal Switch

    NASA Technical Reports Server (NTRS)

    Jones, Jack A.; Bard, Steven; Blue, Gary

    1991-01-01

    Gas/sorbent combinations provide means to turn heat-conduction paths on and off. Single-stage gas-gap thermal switch based on reversible chemisorption of hydrogen gas by ZrNiH. Two-stage gas-gap thermal switch based on reversible desorption of O2 from MnO2 in first stage, followed by absorption in Cu on zeolite in second stage. Requires relatively low power. Used in sorption refrigeration systems designed to operate for long times without maintenance.

  10. Switching mechanism in two-terminal vanadium dioxide devices.

    PubMed

    Radu, Iuliana P; Govoreanu, B; Mertens, S; Shi, X; Cantoro, M; Schaekers, M; Jurczak, M; De Gendt, S; Stesmans, A; Kittl, J A; Heyns, M; Martens, K

    2015-04-24

    Two-terminal thin film VO2 devices show an abrupt decrease of resistance when the current or voltage applied exceeds a threshold value. This phenomenon is often described as a field-induced metal-insulator transition. We fabricate nano-scale devices with different electrode separations down to 100 nm and study how the dc switching voltage and current depend on device size and temperature. Our observations are consistent with a Joule heating mechanism governing the switching. Pulsed measurements show a switching time to the high resistance state of the order of one hundred nanoseconds, consistent with heat dissipation time. In spite of the Joule heating mechanism which is expected to induce device degradation, devices can be switched for more than 10(10) cycles making VO2 a promising material for nanoelectronic applications. PMID:25815433

  11. Manually operated coded switch

    DOEpatents

    Barnette, Jon H.

    1978-01-01

    The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.

  12. Multidimensional set switching.

    PubMed

    Hahn, Sowon; Andersen, George J; Kramer, Arthur F

    2003-06-01

    The present study examined the organization of preparatory processes that underlie set switching and, more specifically, switch costs. On each trial, subjects performed one of two perceptual judgment tasks, color or shape discrimination. Subjects also responded with one of two different response sets. The task set and/or the response set switched from one to the other after 2-6 repeated trials. Response set, task set, and double set switches were performed in both blocked and randomized conditions. Subjects performed with short (100-msec) and long (800-msec) preparatory intervals. Task and response set switches had an additive effect on reaction times (RTs) in the blocked condition. Such a pattern of results suggests a serial organization of preparatory processes when the nature of switches is predictable. However, task and response set switches had an underadditive effect on RTs in the random condition when subjects performed with a brief cue-to-target interval. This pattern of results suggests overlapping task and response set preparation. These findings are discussed in terms of strategic control of preparatory processes in set switching. PMID:12921431

  13. Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

    PubMed Central

    Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

    2015-01-01

    A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ. PMID:26450679

  14. Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.

    PubMed

    Ye, Tianyu; Liu, Han-Chun; Wang, Zhuo; Wegscheider, W; Mani, Ramesh G

    2015-01-01

    A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ. PMID:26450679

  15. Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation

    SciTech Connect

    Ye, Tianyu; Liu, Han -Chun; Wang, Zhuo; Wegscheider, W.; Mani, Ramesh G.

    2015-10-09

    A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. As a result, for circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.

  16. A Novel Molecular Switch

    PubMed Central

    Daber, Robert; Lewis, Mitchell

    2009-01-01

    Transcriptional regulation is a fundamental process for regulating the flux of all metabolic pathways. For the last several decades, the lac operon has served as a valuable model for studying transcription. More recently, the switch that controls the operon has also been successfully adapted to function in mammalian cells. Here we describe how, using directed evolution, we have created a novel switch that recognizes an asymmetric operator sequence. The new switch has a repressor with altered headpiece domains for operator recognition, and a redesigned dimer interface to create a heterodimeric repressor. Quite unexpectedly, the heterodimeric switch functions better than the natural system. It can repress more tightly than the naturally occurring switch of the lac operon; it is less leaky and can be induced more efficiently. Ultimately these novel repressors could be evolved to recognize eukaryotic promoters and used to regulate gene expression in mammalian systems. PMID:19540845

  17. Nanoscale memristive radiofrequency switches

    NASA Astrophysics Data System (ADS)

    Pi, Shuang; Ghadiri-Sadrabadi, Mohammad; Bardin, Joseph C.; Xia, Qiangfei

    2015-06-01

    Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 1012 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

  18. Erected mirror optical switch

    DOEpatents

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  19. Switch on, switch off: stiction in nanoelectromechanical switches

    NASA Astrophysics Data System (ADS)

    Wagner, Till J. W.; Vella, Dominic

    2013-07-01

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the ‘ON’ state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between ‘free’, ‘pinned’ and ‘clamped’ states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed.

  20. Switch on, switch off: stiction in nanoelectromechanical switches.

    PubMed

    Wagner, Till J W; Vella, Dominic

    2013-07-12

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the 'ON' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between 'free', 'pinned' and 'clamped' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. PMID:23759938

  1. Towards single molecule switches.

    PubMed

    Zhang, Jia Lin; Zhong, Jian Qiang; Lin, Jia Dan; Hu, Wen Ping; Wu, Kai; Xu, Guo Qin; Wee, Andrew T S; Chen, Wei

    2015-05-21

    The concept of using single molecules as key building blocks for logic gates, diodes and transistors to perform basic functions of digital electronic devices at the molecular scale has been explored over the past decades. However, in addition to mimicking the basic functions of current silicon devices, molecules often possess unique properties that have no parallel in conventional materials and promise new hybrid devices with novel functions that cannot be achieved with equivalent solid-state devices. The most appealing example is the molecular switch. Over the past decade, molecular switches on surfaces have been intensely investigated. A variety of external stimuli such as light, electric field, temperature, tunneling electrons and even chemical stimulus have been used to activate these molecular switches between bistable or even multiple states by manipulating molecular conformations, dipole orientations, spin states, charge states and even chemical bond formation. The switching event can occur either on surfaces or in break junctions. The aim of this review is to highlight recent advances in molecular switches triggered by various external stimuli, as investigated by low-temperature scanning tunneling microscopy (LT-STM) and the break junction technique. We begin by presenting the molecular switches triggered by various external stimuli that do not provide single molecule selectivity, referred to as non-selective switching. Special focus is then given to selective single molecule switching realized using the LT-STM tip on surfaces. Single molecule switches operated by different mechanisms are reviewed and discussed. Finally, molecular switches embedded in self-assembled monolayers (SAMs) and single molecule junctions are addressed. PMID:25757483

  2. Detection and characterization of multi-filament evolution during resistive switching

    SciTech Connect

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.

  3. Detection and characterization of multi-filament evolution during resistive switching

    DOE PAGESBeta

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discussmore » operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.« less

  4. Optical Circuit Switched Protocol

    NASA Technical Reports Server (NTRS)

    Monacos, Steve P. (Inventor)

    2000-01-01

    The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

  5. Optical packet switching

    NASA Astrophysics Data System (ADS)

    Shekel, Eyal; Ruschin, Shlomo; Majer, Daniel; Levy, Jeff; Matmon, Guy; Koenigsberg, Lisa; Vecht, Jacob; Geron, Amir; Harlavan, Rotem; Shfaram, Harel; Arbel, Arnon; McDermott, Tom; Brewer, Tony

    2005-02-01

    We report here a scalable, multichassis, 6.3 terabit core router, which utilizes our proprietary optical switch. The router is commercially available and deployed in several customer sites. Our solution combines optical switching with electronic routing. An internal optical packet switching network interconnects the router"s electronic line cards, where routing and buffering functions take place electronically. The system architecture and performance will be described. The optical switch is based on Optical Phased Array (OPA) technology. It is a 64 x 64, fully non-blocking, optical crossbar switch, capable of switching in a fraction of a nanosecond. The basic principles of operation will be explained. Loss and crosstalk results will be presented, as well as the results of BER measurements of a 160 Gbps transmission through one channel. Basic principles of operation and measured results will be presented for the burst-mode-receivers, arbitration algorithm and synchronization. Finally, we will present some of our current research work on a next-generation optical switch. The technological issues we have solved in our internal optical packet network can have broad applicability to any global optical packet network.

  6. Unexploded ordnance detection using imaging giant magnetoresistive (GMR) sensor arrays

    SciTech Connect

    Chaiken, A., LLNL

    1997-05-06

    False positive detections account for a great part of the expense associated with unexploded ordnance (UXO) remediation. Presently fielded systems like pulsed electromagnetic induction systems and cesium-vapor magnetometers are able to distinguish between UXO and other metallic ground clutter only with difficulty. The discovery of giant magnetoresistance (GMR) has led to the development of a new generation of integrated-circuit magnetic sensors that are far more sensitive than previously available room-temperature-operation electronic devices. The small size of GMR sensors makes possible the construction of array detectors that can be used to image the flux emanating from a ferrous object or from a non-ferrous object with eddy currents imposed by an external coil. The purpose of a GMR-based imaging detector would be to allow the operator to easily distinguish between UXO and benign objects (like shrapnel or spent bullets) that litter formerly used defense sites (FUDS). In order to demonstrate the potential of a GMR-based imaging technology, a crude magnetic imaging system has been constructed using commercially available sensors. The ability to roughly determine the outline and disposition of magnetic objects has been demonstrated. Improvements to the system which are necessary to make it into a high-performance UXO detector are outlined.

  7. Large Magnetoresistance in Single-Radical Molecular Junctions.

    PubMed

    Hayakawa, Ryoma; Karimi, Mohammad Amin; Wolf, Jannic; Huhn, Thomas; Zöllner, Martin Sebastian; Herrmann, Carmen; Scheer, Elke

    2016-08-10

    Organic radicals are promising building blocks for molecular spintronics. Little is known about the role of unpaired electrons for electron transport at the single-molecule level. Here, we examine the impact of magnetic fields on electron transport in single oligo(p-phenyleneethynylene) (OPE)-based radical molecular junctions, which are formed with a mechanically controllable break-junction technique at a low temperature of 4.2 K. Surprisingly huge positive magnetoresistances (MRs) of 16 to 287% are visible for a magnetic field of 4 T, and the values are at least 1 order of magnitude larger than those of the analogous pristine OPE (2-4%). Rigorous analysis of the MR and of current-voltage and inelastic electron-tunneling spectroscopy measurements reveal an effective reduction of the electronic coupling between the current-carrying molecular orbital and the electrodes with increasing magnetic field. We suggest that the large MR for the single-radical molecular junctions might be ascribed to a loss of phase coherence of the charge carriers induced by the magnetic field. Although further investigations are required to reveal the mechanism underlying the strong MR, our findings provide a potential approach for tuning charge transport in metal-molecule junctions with organic radicals. PMID:27458666

  8. Magnetoresistance Phenomena in a Variety of Amorphous Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Mutch, Michael; Westley, David; Lenahan, Patrick; Semiconductor Spectroscopy Lab at Penn State University Team

    We report on near zero-field magnetoresistance (MR) phenomena in a variety of amorphous semiconductors and insulators. We utilize electrically detected magnetic resonance (EDMR) measurements at multiple fields and frequencies to complement MR measurements. EDMR, the electrically detected analog of electron paramagnetic resonance (EPR), provides both information about the chemical nature and energy levels of point defects involved. Semiconductors in this study include a-BC:H, a-C:H, diamond-like carbon (DLC), and a-Si:H. Insulators include a-SiN:H, a-SiOC:H, a-SiCN:H. In hydrogenated amorphous systems, near featureless EPR and EDMR spectra are often difficult to analyze. We utilize multiple field and frequency EDMR results including ultra-low field/frequency (ν = 85 MHz, B = 3 mT) EDMR measurements to provide insight into defect chemistry in these systems. We have also made EDMR and MR conditions over a wide range of metal/semiconductor heterojunction and metal/insulator/semiconductor biasing conditions. By comparing variable bias measurements with band diagrams, we gain an elementary understanding of defect energy levels. We believe our results will be of significant importance for understanding defect mediated spin-dependent transport in these systems. The authors would like to thanks Dr. Sean King of Intel Corporation for the provision of samples.

  9. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    SciTech Connect

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P.

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  10. Magnetoresistance detected spin collectivity in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Malissa, Hans; Waters, David P.; Joshi, Gajadhar; Kavand, Marzieh; Limes, Mark E.; Burn, Paul L.; Lupton, John M.; Boehme, Christoph

    Organic magnetoresistance (OMAR) typically refers to the significant change in the conductivity of thin layers of organic semiconductors at low static magnetic fields (< 10 mT). When radio frequency (rf) radiation is applied to an organic semiconductor under bipolar injection, and in the presence of small magnetic fields B, magnetic resonance can occur, which is observed as a change of the OMAR effect [Baker et al., Nat. Commun. 3, 898 (2012)]. When B and the resonant driving field are stronger than local hyperfine fields, an ultrastrong coupling regime emerges, which is marked by collective spin effects analogous to the optical Dicke effect [Roundy and Raikh, Phys. Rev. B 88, 125206 (2013)]. Experimentally, this collective behavior of spins can be probed in the steady state OMAR of organic light-emitting diodes (OLEDs) at room temperature by observation of a sign reversal of the OMAR change under rf irradiation. Furthermore, in the presence of strong driving fields, an ac Zeeman effect can be observed through OMAR [Waters et al., Nat. Phys. 11, 910 (2015)], a unique window to observe room temperature macroscopic spin quantum coherence.

  11. Magnetoresistive-superconducting mixed sensors for biomagnetic applications

    NASA Astrophysics Data System (ADS)

    Pannetier-Lecoeur, M.; Fermon, C.; Dyvorne, H.; Jacquinot, J. F.; Polovy, H.; Walliang, A. L.

    2010-05-01

    When coupled to a giant magnetoresistive (GMR) sensor, a superconducting loop containing a constriction can be a very sensitive magnetometer. It has thermal noise levels of few fT/sqrt(Hz), comparable to low- Tc SQUID noise, with a flat frequency response. These mixed sensors are good candidates for detection of weak biomagnetic signals, like a cardiac or neuronal signature. Furthermore, being sensitive to the flux, mixed sensors can be used for nuclear magnetic resonance (NMR) detection and Magnetic Resonance Imaging (MRI) especially at low fields. They are very robust and accept strong RF pulses with a very short recovery time compared to tuned RF coils, which allow measurements of broad signals (short relaxation time or multiple resonances). We will first present the last generation sensors having a noise level of 3 fT/sqrt(Hz) and we will show signals measured at low frequency (magnetocardiography-magnetoencephalography range) and at higher frequency (NMR signals). The use of additional flux transformers for improving the signal-to-noise will be discussed. Finally, we will present perspectives for low-field MRI, which can be combined with neural signal detection (MEG), especially for brain anatomy and temporal response on the same experimental setup.

  12. Role of structurally and magnetically modified nanoclusters in colossal magnetoresistance

    PubMed Central

    Tao, Jing; Niebieskikwiat, Dario; Jie, Qing; Schofield, Marvin A.; Wu, Lijun; Li, Qiang; Zhu, Yimei

    2011-01-01

    It is generally accepted that electronic and magnetic phase separation is the origin of many of exotic properties of strongly correlated electron materials, such as colossal magnetoresistance (CMR), an unusually large variation in the electrical resistivity under applied magnetic field. In the simplest picture, the two competing phases are those associated with the material state on either side of the phase transition. Those phases would be paramagnetic insulator and ferromagnetic metal for the CMR effect in doped manganites. It has been speculated that a critical component of the CMR phenomenon is nanoclusters with quite different properties than either of the terminal phases during the transition. However, the role of these nanoclusters in the CMR effect remains elusive because the physical properties of the nanoclusters are hard to measure when embedded in bulk materials. Here we show the unexpected behavior of the nanoclusters in the CMR compound La1-xCaxMnO3 (0.4 ≤ x < 0.5) by directly correlating transmission electron microscopy observations with bulk measurements. The structurally modified nanoclusters at the CMR temperature were found to be ferromagnetic and exhibit much higher electrical conductivity than previously proposed. Only at temperatures much below the CMR transition, the nanoclusters are antiferromagnetic and insulating. These findings substantially alter the current understanding of these nanoclusters on the material’s functionality and would shed light on the microscopic study on the competing spin-lattice-charge orders in strongly correlated systems. PMID:22160678

  13. Scanning Magnetoresistance Microscopy Studies of Small Magnetic and Electrical Structures

    NASA Astrophysics Data System (ADS)

    Xiao, Gang

    2004-03-01

    Many physical objects generate microscopic magnetic-field images near their surfaces. Such images reveal important signatures of inherent electrical and magnetic processes within the objects. For example, the image of a magnetic thin film discloses its internal magnetic domain structure. Electrical currents inside an semiconductor chip generate surface magnetic field images, which not only contain information about the electrical current distribution, but also the frequencies with which various components on a chip operates. A type II superconductor also creates an image of threading magnetic flux lines, whose structure and dynamics are fundamental properties. We have developed a sensitive and high-resolution magnetic microscope that is capable of non-invasively imaging, characterizing, and investigating spatial magnetic field patterns. At the heart of the microscope is a miniaturized magnetic-tunnel-junction (MTJ) or giant magnetoresistance (GMR) sensor, capable to work at high speed, under ambient conditions, and over a wide bandwidth. This type of MR microscopy (MRM) offers many advantages over the magnetic force microscopy (MFM) and others. It measures the absolute local magnetic field, and its sensor does not generate invasive field as a magnetic tip would. The MRM can also measure dynamic magnetic images in a time varying external field. We will present results obtained from a wide range of structures using MRM, including small magnetic structures and state-of-the-art integrated circuits. This work supported by NSF is a collaboration with B. Schrag, X.Y. Liu, and G. Singh.

  14. Sensitive giant magnetoresistive-based immunoassay for multiplex mycotoxin detection.

    PubMed

    Mak, Andy C; Osterfeld, Sebastian J; Yu, Heng; Wang, Shan X; Davis, Ronald W; Jejelowo, Olufisayo A; Pourmand, Nader

    2010-03-15

    Rapid and multiplexed measurement is vital in the detection of food-borne pathogens. While highly specific and sensitive, traditional immunochemical assays such as enzyme-linked immunosorbent assays (ELISAs) often require expensive read-out equipment (e.g. fluorescent labels) and lack the capability of multiplex detection. By combining the superior specificity of immunoassays with the sensitivity and simplicity of magnetic detection, we have developed a novel multiplex magnetic nanotag-based detection platform for mycotoxins that functions on a sub-picomolar concentration level. Unlike fluorescent labels, magnetic nanotags (MNTs) can be detected with inexpensive giant magnetoresistive (GMR) sensors such as spin-valve sensors. In the system presented here, each spin-valve sensor has an active area of 90 microm x 90 microm, arranged in an 8 x 8 array. Sample is added to the antibody-immobilized sensor array prior to the addition of the biotinylated detection antibody. The sensor response is recorded in real time upon the addition of streptavidin-linked MNTs on the chip. Here we demonstrate the simultaneous detection of multiple mycotoxins (aflatoxins B(1), zearalenone and HT-2) and show that a detection limit of 50 pg/mL can be achieved. PMID:20047828

  15. Integrated giant magnetoresistance bridge sensors with transverse permanent magnet biasing

    NASA Astrophysics Data System (ADS)

    Ku, Wanjun; Silva, F.; Bernardo, J.; Freitas, P. P.

    2000-05-01

    Two types of giant magnetoresistance (GMR) multilayer bridge sensors with integrated permanent magnet biasing are demonstrated. These sensors differ from previous designs where external permanent magnets were used. The bridges consist of four active GMR multilayer elements at the first antiferromagnetic coupling peak of a NiFe/[NiFe/CoFe/Cu]10 structure (GMR=18%). Bridge linearization is obtained by creating opposite biasing fields of equal amplitude (±200 Oe) in contiguous GMR elements of the bridge structure. This is achieved either by using pairs of permanent magnets with the same Mrt value (14 memu/cm2) but different coercivities (type I bridge, Hc1=1400 Oe, Hc2=800 Oe), or by using a single type of permanent magnet and placing the GMR sensor either under the magnet, or on its side (type II bridge). Linear ranges of ±200 Oe with field sensitivities of 0.3 mV/(V×Oe) were obtained in these bridges.

  16. Theoretical Study on Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect

    NASA Astrophysics Data System (ADS)

    Kokado, Satoshi; Tsunoda, Masakiyo

    We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effect [ 1 ] . We first extend our previous model [ 2 ] to a model including the crystal field effect [ 1 ] . Using the model, we next obtain an analytical expression of the AMR ratio, i.e., AMR (ϕ) =C0 +C2 cos (2 ϕ) +C4 cos (4 ϕ) , with C0=C2 -C4 [ 1 ] . Here, ϕ is the relative angle between the magnetization direction and the electric current direction and C2 (C4) is a coefficient of the twofold (fourfold) symmetric term. The coefficients C2 and C4 are expressed by a spin-orbit coupling constant, an exchange field, a crystal field, and s-s and s-d scattering resistivities. Using this expression, we analyze the experimental results for Fe4N [ 3 ] , in which | C2 | and | C4 | increase with decreasing temperature. The experimental results can be reproduced by assuming that the tetragonal distortion increases with decreasing temperature. [ 1 ] S. Kokado et al., J. Phys. Soc. Jpn. 84 (2015) 094710. [ 2 ] S. Kokado et al., J. Phys. Soc. Jpn. 81 (2012) 024705. [ 3 ] M. Tsunoda et al., Appl. Phys. Express 3 (2010) 113003.

  17. Magnetoresistance in p-type cadmium telluride doped with sodium

    NASA Astrophysics Data System (ADS)

    Ahmad, Faisal R.

    2015-01-01

    This paper gives an account of the observations that were made during experiments in which temperature dependent van der Pauw (vdP) measurements were conducted on sodium doped single crystalline CdTe. With the aid of the vdP technique, the resistivity of the sample was measured in the presence of an external transverse magnetic field. The measurements were conducted at temperatures that ranged from 24 K all the way up to 300 K. The measurements indicated that at low temperatures, the resistivity of the sample increased significantly as the magnitude of the magnetic field perpendicular to the sample was raised from 0 T to 1.5 T. It was observed that the magnetoresistance (MR) decreased with increasing temperature. At 24 K, for an applied field of 1.5 T, the maximum MR was over 30%. Furthermore, it was also observed that the MR below 75 K exhibited a more or less linear dependence on the magnetic field. At higher temperatures, the MR as a function of the applied magnetic field exhibited a quadratic dependence. The results seem to indicate that the linear MR is most likely due to inhomogeneity in the semiconductor.

  18. Giant single-molecule anisotropic magnetoresistance at room temperature.

    PubMed

    Li, Ji-Jun; Bai, Mei-Lin; Chen, Zhao-Bin; Zhou, Xiao-Shun; Shi, Zhan; Zhang, Meng; Ding, Song-Yuan; Hou, Shi-Min; Schwarzacher, Walther; Nichols, Richard J; Mao, Bing-Wei

    2015-05-13

    We report an electrochemically assisted jump-to-contact scanning tunneling microscopy (STM) break junction approach to create reproducible and well-defined single-molecule spintronic junctions. The STM break junction is equipped with an external magnetic field either parallel or perpendicular to the electron transport direction. The conductance of Fe-terephthalic acid (TPA)-Fe single-molecule junctions is measured and a giant single-molecule tunneling anisotropic magnetoresistance (T-AMR) up to 53% is observed at room temperature. Theoretical calculations based on first-principles quantum simulations show that the observed AMR of Fe-TPA-Fe junctions originates from electronic coupling at the TPA-Fe interfaces modified by the magnetic orientation of the Fe electrodes with respect to the direction of current flow. The present study highlights new opportunities for obtaining detailed understanding of mechanisms of charge and spin transport in molecular junctions and the role of interfaces in determining the MR of single-molecule junctions. PMID:25894840

  19. The spin-Dicke effect in OLED magnetoresistance

    NASA Astrophysics Data System (ADS)

    Waters, D. P.; Joshi, G.; Kavand, M.; Limes, M. E.; Malissa, H.; Burn, P. L.; Lupton, J. M.; Boehme, C.

    2015-11-01

    Pairs of charge-carrier spins in organic semiconductors constitute four-level systems that can be driven electromagnetically. Given appropriate conditions for ultrastrong coupling--weak local hyperfine fields Bhyp, large magnetic resonant driving fields B1 and low static fields B0 that define Zeeman splitting--the spin-Dicke effect, a collective transition of spin states, has been predicted. This parameter range is challenging to probe by electron paramagnetic resonance spectroscopy because thermal magnetic polarization is negligible. It is accessed through spin-dependent conductivity that is controlled by electron-hole pairs of singlet and triplet spin-permutation symmetry without the need of thermal spin polarization. Signatures of collective behaviour of carrier spins are revealed in the steady-state magnetoresistance of organic light-emitting diodes (OLEDs), rather than through radiative transitions. For intermediate B1, the a.c.-Zeeman effect appears. For large B1, a collective spin-ensemble state arises, inverting the current change under resonance and removing power broadening, thereby offering a unique window to ambient macroscopic quantum coherence.

  20. Gilbert damping and anisotropic magnetoresistance in iron-based alloys

    NASA Astrophysics Data System (ADS)

    Berger, L.

    2016-07-01

    We use the two-current model of Campbell and Fert to understand the compositional dependence of the Gilbert damping parameter in certain iron alloys. In that model, spin-up and spin-down carriers have different resistivities ρ↑ and ρ↓. We emphasize the part of the Gilbert parameter, called Gsf, generated by spin-flip interband processes. Both Gsf and the anisotropic magnetoresistance Δρ are proportional to the square of the spin-orbit parameter, and also proportional to ρ↑. In bcc alloys of iron with V, Cr, Mo, etc. solutes on the left of iron in the periodic table, ρ↑ is increased by a scattering resonance (Gomes and Campbell, 1966, 1968). Then ρ↑, Δρ, and Gsf all exhibit a peak at the same moderate concentration of the solute. We find the best fit between this theory and existing experimental data of Gilbert damping for Fe-V epitaxial films at room temperature (Cheng, 2006; Scheck et al., 2007). At room temperature, the predicted Gsf peak is masked by a background arising from non-flip intraband processes. At elevated temperatures, the peak is expected to become more prominent, and less hidden in the background.

  1. Magnetoresistance in p-type cadmium telluride doped with sodium

    SciTech Connect

    Ahmad, Faisal R.

    2015-01-05

    This paper gives an account of the observations that were made during experiments in which temperature dependent van der Pauw (vdP) measurements were conducted on sodium doped single crystalline CdTe. With the aid of the vdP technique, the resistivity of the sample was measured in the presence of an external transverse magnetic field. The measurements were conducted at temperatures that ranged from 24 K all the way up to 300 K. The measurements indicated that at low temperatures, the resistivity of the sample increased significantly as the magnitude of the magnetic field perpendicular to the sample was raised from 0 T to 1.5 T. It was observed that the magnetoresistance (MR) decreased with increasing temperature. At 24 K, for an applied field of 1.5 T, the maximum MR was over 30%. Furthermore, it was also observed that the MR below 75 K exhibited a more or less linear dependence on the magnetic field. At higher temperatures, the MR as a function of the applied magnetic field exhibited a quadratic dependence. The results seem to indicate that the linear MR is most likely due to inhomogeneity in the semiconductor.

  2. Temperature-field phase diagram of extreme magnetoresistance.

    PubMed

    Fallah Tafti, Fazel; Gibson, Quinn; Kushwaha, Satya; Krizan, Jason W; Haldolaarachchige, Neel; Cava, Robert Joseph

    2016-06-21

    The recent discovery of extreme magnetoresistance (XMR) in LaSb introduced lanthanum monopnictides as a new platform to study this effect in the absence of broken inversion symmetry or protected linear band crossing. In this work, we report XMR in LaBi. Through a comparative study of magnetotransport effects in LaBi and LaSb, we construct a temperature-field phase diagram with triangular shape that illustrates how a magnetic field tunes the electronic behavior in these materials. We show that the triangular phase diagram can be generalized to other topological semimetals with different crystal structures and different chemical compositions. By comparing our experimental results to band structure calculations, we suggest that XMR in LaBi and LaSb originates from a combination of compensated electron-hole pockets and a particular orbital texture on the electron pocket. Such orbital texture is likely to be a generic feature of various topological semimetals, giving rise to their small residual resistivity at zero field and subject to strong scattering induced by a magnetic field. PMID:27274081

  3. Solid state switch

    DOEpatents

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  4. SPARK GAP SWITCH

    DOEpatents

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  5. Photoconductive switch package

    DOEpatents

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  6. Photoconductive switch package

    SciTech Connect

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  7. Electromechanical magnetization switching

    SciTech Connect

    Chudnovsky, Eugene M.; Jaafar, Reem

    2015-03-14

    We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

  8. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    NASA Astrophysics Data System (ADS)

    Yan, Zhongbo; Wan, Shaolong

    2016-02-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance.

  9. Sign change of magnetoresistance in Gd-doped amorphous carbon granular films.

    PubMed

    Ding, Shihao; Jin, Chao; Fan, Ziwei; Li, Peng; Bai, Haili

    2015-11-11

    Gd/C granular films with 11% Gd were fabricated by facing-target magnetron sputtering at room temperature and then annealed at 300-650 °C for 1.5 h. A magnetoresistance of -82% was obtained in the Gd/C films annealed at 650 °C at 3 K under a magnetic field of 50 kOe. A sign change of the magnetoresistance from negative to positive and then back to negative was observed in all samples as the temperature decreases. Grain boundary scattering effects, wave-function-shrinkage, cotunneling and Gd-Gd interactions account for the mechanisms of the magnetoresistance effects in different temperature regions. The sign of the magnetoresistance also varies as the magnetic field increases. At the transition temperature of 25 K, the wave-function-shrinkage effect competes with cotunneling and Gd-Gd interactions at different magnetic fields. The competition between the wave-function-shrinkage effect and the grain boundary scattering effect is approximately at the transition temperature of 100 K. The temperature range of positive magnetoresistance expands and transition temperatures are changed as the annealing temperature increases. It is related to the expansion of the temperature region for the wave-function-shrinkage effect which occurs in the Mott variable range hopping conduction mechanism. PMID:26527080

  10. Magnetoresistance Technique for Determining Cross-Plane Mobility in Superlattice Devices

    SciTech Connect

    Johnston, S. W.; Ahrenkiel, R. K.; Young, D.; Venkatasubramanian, R.

    1999-09-01

    The cross-plane mobility, in the direction perpendicular to the planes of a superlattice, is critical for the computation of the figure of merit (ZT) in a thermoelectric device. The measurement of cross-plane mobilities in thermoelectric superlattice structures cannot be performed by conventional techniques such as the van der Pauw method. Therefore, alternative techniques must be used to obtain this important parameter. Magnetoresistance is the increase in material resistivity due to a lengthened path for charge carriers in a perpendicular magnetic field. The magnetoresistance is related to the magnetic field strength as ({mu}B)2 in the standard configuration, but the field dependence is also influenced by device geometry. This work focuses on measuring superlattice samples of composition Bi2Te3/Sb2Te3 that are removed from their growth substrate and mounted on metal-coated substrates. This resulting mesa structure has a 100-mm-square contact metallization. Technical issues related to the sample preparation for the measurement are discussed. The magnetoresistance effect is expected to be small due to the anticipated low mobilities in Bi2Te3-based materials. Magnetoresistance studies with such superlattice thermo-elements were attempted using a dc magnetic field, but the sensitivity was insufficient. An ac magnetoresistance with lock-in detection can yield improved sensitivity.

  11. Magnetic anisotropy and anisotropic magnetoresistance in strongly phase separated manganite thin films

    NASA Astrophysics Data System (ADS)

    Kandpal, Lalit M.; Singh, Sandeep; Kumar, Pawan; Siwach, P. K.; Gupta, Anurag; Awana, V. P. S.; Singh, H. K.

    2016-06-01

    The present study reports the impact of magnetic anisotropy (MA) on magnetotransport properties such as the magnetic transitions, magnetic liquid behavior, glass transition and anisotropic magnetoresistance (AMR) in epitaxial film (thickness 42 nm) of strongly phase separated manganite La5/8-yPryCa3/8MnO3 (y≈0.4). Angle dependent magnetization measurement confirms the out-of-plane magnetic anisotropy with the magnetic easy axes aligned in the plane of the film and the magnetic hard axis along the normal to the film plane. The more prominent divergence between the zero filed cooled (ZFC) and field cooled warming (FCW) and the stronger hysteresis between the field cooled cooling (FCC) and FCW magnetization for H ∥ shows the weakening of the magnetic liquid along the magnetic hard axis. The peak at Tp≈42 K in FCW magnetization, which characterizes the onset of spin freezing shifts down to Tp≈18 K as the field direction is switched from the easy axes (H ∥) to the hard axis (H ⊥). The glass transition, which appears at Tg≈28 K for H ∥ disappears for H ⊥. The easy axis magnetization (M∣∣) appears to saturate around H~20 kOe, but the hard axis counterpart (M⊥) does not show such tendency even up to H=50 kOe. MA appears well above the ferromagnetic (FM) transition at T≈170 K, which is nearly the same as the Neel temperature (TN) of M⊥ - T . The temperature dependent resistivity measured at H=10 kOe applied along the easy axis (ρ|| - T) and the hard axis (ρ⊥ - T) shows insulator metal transition (IMT) at ≈106 K and ≈99 K in the cooling cycle, respectively. The large difference between ρ⊥ - T and ρ|| - T during the cooling cycle and in the vicinity of IMT results in huge AMR of ≈-142% and -115%. The observed properties have been explained in terms of the MA induced variation in the relative fraction of the coexisting magnetic phases.

  12. MEMS thermal switch for spacecraft thermal control

    NASA Astrophysics Data System (ADS)

    Beasley, Matthew A.; Firebaugh, Samara L.; Edwards, Richard L.; Keeney, Allen C.; Osiander, Robert

    2004-01-01

    Small satellites with their low thermal capacitance are vulnerable to rapid temperature fluctuations. Therefore, thermal control becomes important, but the limitations on mass and electrical power require new approaches. Possible solutions to actively vary the heat rejection of the satellite in response to variations in the thermal load and environmental condition are the use of a variable emissivity coating (VEC), micro-machined shutters and louvers, or thermal switches. An elegant way the radiate heat is to switch the thermal contact between the emitting surface and the radiator electrostatically. This paper describes the design and fabrication of an active radiator for satellite thermal control based on such a micro electromechanical (MEMS) thermal switch. The switch operates by electrostatically moving a high emissivity surface layer in and out of contact with the radiator. The electromechanical model and material considerations for the thermal design of the MEMS device are discussed. The design utilizes a highly thermal conductive gold membrane supported by low-conductance SU-8 posts. The fabrication process is described. Measured actuation voltages were consistent with the electrostatic model, ranging from 8 to 25 volts.

  13. Cryogenic Quad-Redundant Thermal Switch

    NASA Astrophysics Data System (ADS)

    Thompson, B. C.; Lloyd, B.; Schick, S. H.; Li, L.

    2008-03-01

    A Quad-Redundant Thermal Switch (QRTS) for the James Webb Space Telescope has been successfully designed, fabricated, and tested at the Space Dynamics Laboratory (SDL). A flight-like prototype successfully passed thermal and structural qualification tests in a representative space environment and achieved Technology Readiness Level 6. The QRTS serves as a high thermal conductance, high reliability thermal connect/disconnect between heat sources and sinks. The switch design is passively closed over the entire operational range of 32-300 K. The construction is an all metallic core packaged in a cross-strapped quad-redundant configuration. Actuation of the switch is based on differential thermal expansion and is opened by applying heat to the mechanism. Key qualification tests included: robust characterization of thermal closed and open performance from 32 to 313 K; and a full suite of vibration testing (sine, random, and sine burst). This paper presents an overview of the QRTS functionality, thermal and structural qualification tests, and resulting switch performance.

  14. Miniature Intermittent Contact Switch

    NASA Technical Reports Server (NTRS)

    Sword, Antony

    1972-01-01

    This tech brief concerns work to provide a shock-resistant switch capable of being actuated by forces of varying magnitude and direction, primarily for use as a sensor on remote control (tele-operator) and prosthetic devices.

  15. Plasmonic enhanced ultrafast switch.

    SciTech Connect

    Subramania,Ganapathi Subramanian; Reno, John Louis; Passmore, Brandon Scott; Harris, Tom.; Shaner, Eric Arthur; Barrick, Todd A.

    2009-09-01

    Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

  16. An optical switch

    DOEpatents

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  17. Switching and stopping antidepressants

    PubMed Central

    Keks, Nicholas; Hope, Judy; Keogh, Simone

    2016-01-01

    SUMMARY Switching from one antidepressant to another is frequently indicated due to an inadequate treatment response or unacceptable adverse effects. All antidepressant switches must be carried out cautiously and under close observation. Conservative switching strategies involve gradually tapering the first antidepressant followed by an adequate washout period before the new antidepressant is started. This can take a long time and include periods of no treatment with the risk of potentially life-threatening exacerbations of illness. Clinical expertise is needed for more rapid or cross-taper switching as drug toxicity, including serotonin syndrome, may result from inappropriate co-administration of antidepressants. Some antidepressants must not be combined. Antidepressants can cause withdrawal syndromes if discontinued abruptly after prolonged use. Relapse and exacerbation of depression can also occur. Gradual dose reduction over days to weeks reduces the risk and severity of complications. PMID:27346915

  18. High average power switching in diamond

    SciTech Connect

    Hofer, W.W.; Schoenbach, K.H.

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300{degree}K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm{sup 2}/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/{degree}K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (switch. Electron beam control offers much higher efficiency and flexibility than laser control. We obtained experimental results with electron beam activated diamond films which were CVD grown on an n-type silicon substrate. With the substrate biased positive, the switch current was found to follow the electron beam pulse up to fields of about 0.9 MV/cm where ``lock-on`` occurred, i.e., the switch current continued to flow even after the electron beam was turned off. This effect, most likely due to double charge injection, was suppressed by biasing the n-silicon substrate negatively. The switch current then followed the electron beam pulse up to electric fields of 1.8 MV/cm, limited by our electrical circuit, with no evidence of ``lock-on.`` The predictable response of the switch current to the electron beam pulse at extreme,applied fields make electron beam controlled diamond switch a promising candidate for a high power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  19. High average power switching in diamond

    SciTech Connect

    Hofer, W.W. ); Schoenbach, K.H. )

    1992-06-01

    Diamond has many properties which make it ideal for a high power solid-state switch. The crystal structure of diamond is relatively well characterized. It is a semiconductor with a band-gap of 5.5 eV at 300[degree]K. The high band-gap of diamond results in a small dark current compared to Si or GaAs. As a result the breakdown field or holding voltage is very high, 1--10 MV/cm. The electron and hole mobility are approximately 2000 cm[sup 2]/v-sec. At room temperature, diamond has the highest thermal conductivity of any solid, 20 W/[degree]K -cm, about five times that of copper. This is ideal for switching because heat dissipation and thermal runaway problems are greatly mitigated. Our switch concept uses a low current (switch. Electron beam control offers much higher efficiency and flexibility than laser control. We obtained experimental results with electron beam activated diamond films which were CVD grown on an n-type silicon substrate. With the substrate biased positive, the switch current was found to follow the electron beam pulse up to fields of about 0.9 MV/cm where lock-on'' occurred, i.e., the switch current continued to flow even after the electron beam was turned off. This effect, most likely due to double charge injection, was suppressed by biasing the n-silicon substrate negatively. The switch current then followed the electron beam pulse up to electric fields of 1.8 MV/cm, limited by our electrical circuit, with no evidence of lock-on.'' The predictable response of the switch current to the electron beam pulse at extreme,applied fields make electron beam controlled diamond switch a promising candidate for a high power on-off switch. Steady advancements in CVD polycrystalline and single crystal diamond help make this possible.

  20. Switching power supply filter

    NASA Technical Reports Server (NTRS)

    Kumar, Prithvi R. (Inventor); Abare, Wayne (Inventor)

    1989-01-01

    A filter for a switching power supply. The filter includes a common mode inductor with coil configurations allowing differential mode current from a dc source to pass through but attenuating common mode noise from the power supply so that the noise does not reach the dc source. The invention also includes the use of feed through capacitors at the switching power supply input terminals to provide further high-frequency noise attenuation.

  1. Cygnus Water Switch Jitter

    SciTech Connect

    Charles V. Mitton, George D. Corrow, Mark D. Hansen, David J. Henderson, et al.

    2008-03-01

    The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources - Cygnus 1 and Cygnus 2. Each source has the following x-ray output: 1-mm diameter spot size, 4 rad at 1 m, 50-ns Full Width Half Max. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests which are performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are: Marx generator, water-filled pulse–forming line (PFL), water-filled coaxial transmission line, three-cell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance is jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the diode pulse. Therefore, PFL switch jitter contributes to shot-to-shot variation in source endpoint energy and dose. In this paper we will present PFL switch jitter analysis for both Cygnus machines and give the correlation with diode performance. For this analysis the PFL switch on each machine was maintained at a single gap setting which has been used for the majority of shots at NTS. In addition to this analysis, PFL switch performance for different switch gap settings taken recently will be examined. Lastly, implications of source jitter for radiographic diagnosis of subcritical shots will be discussed.

  2. Irreversible magnetic switch

    SciTech Connect

    Karnowsky, M.M.; Yost, F.G.

    1991-12-31

    This invention is comprised of an irreversible magnetic switch containing a ferromagnetic amorphous metal having a predetermined crystallization temperature in its inductor magnetic path. With the incorporation of such material, the magnetic properties after cooling from a high temperature excursion above its crystallization temperature are only a fraction of the original value. The difference is used to provide a safety feature in the magnetic switch.

  3. Cygnus PFL Switch Jitter

    SciTech Connect

    C. Mitton, G. Corrow, M. Hansen, D. Henderson, et al.

    2007-07-21

    The Cygnus Dual Beam Radiographic Facility consists of two identical radiographic sources: Cygnus 1 and Cygnus 2. Each source has the following X-ray output: 1-mm diameter spot size, 4 rads at 1 m, 50-ns full-widthhalf-maximum. The diode pulse has the following electrical specifications: 2.25 MV, 60 kA, 60 ns. This Radiographic Facility is located in an underground tunnel test area at the Nevada Test Site (NTS). The sources were developed to produce high-resolution images on subcritical tests performed at NTS. Subcritical tests are single-shot, high-value events. For this application, it is desirable to maintain a high level of reproducibility in source output. The major components of the Cygnus machines are Marx generator, water-filled pulse forming line (PFL), water-filled coaxial transmission line, threecell inductive voltage adder, and rod-pinch diode. A primary source of fluctuation in Cygnus shot-to-shot performance may be jitter in breakdown of the main PFL switch, which is a “self-break” switch. The PFL switch breakdown time determines the peak PFL charging voltage, which ultimately affects the source X-ray spectrum and dose. Therefore, PFL switch jitter may contribute to shot-to-shot variation in these parameters, which are crucial to radiographic quality. In this paper we will present PFL switch jitter analysis for both Cygnus machines and present the correlation with dose. For this analysis, the PFL switch on each machine was maintained at a single gap setting, which has been used for the majority of shots at NTS. In addition the PFL switch performance for one larger switch gap setting will be examined.

  4. uv preilluminated gas switches

    SciTech Connect

    Bradley, L.P.; Orham, E.L.; Stowers, I.F.; Braucht, J.R.

    1980-06-03

    We have designed, built, and characterized uv preilluminated gas switches for a trigger circuit and a low inductance discharge circuit. These switches have been incorporated into a 54 x 76 x 150 cm pulser module to produce a 1 Ma output current rising at 5 x 10/sup 12/ amps/sec with 1 ns jitter. Twenty such modules will be used on the Nova Inertial Confinement Fusion Laser System for plasma retropulse shutters.

  5. Finding a stabilising switching law for switching nonlinear models

    NASA Astrophysics Data System (ADS)

    Lendek, Zs.; Raica, P.; Lauber, J.; Guerra, T. M.

    2016-09-01

    This paper considers the stabilisation of switching nonlinear models by switching between the subsystems. We assume that arbitrary switching between two subsystems is possible once a subsystem has been active for a predefined number of samples. We use a Takagi-Sugeno representation of the models and a switching Lyapunov function is employed to develop sufficient stability conditions. If the conditions are satisfied, we construct a switching law that stabilises the system. The application of the conditions is illustrated in several examples.

  6. Discrete Layer-by-Layer Magnetic Switching in Fe /MgO (001 ) Superlattices

    NASA Astrophysics Data System (ADS)

    Moubah, R.; Magnus, F.; Warnatz, T.; Palsson, G. K.; Kapaklis, V.; Ukleev, V.; Devishvili, A.; Palisaitis, J.; Persson, P. O. Å.; Hjörvarsson, B.

    2016-04-01

    We report on a discrete layer-by-layer magnetic switching in Fe /MgO superlattices driven by an antiferromagnetic interlayer exchange coupling. The strong interlayer coupling is mediated by tunneling through MgO layers with thicknesses up to at least 1.8 nm, and the coupling strength varies with MgO thickness. Furthermore, the competition between the interlayer coupling and magnetocrystalline anisotropy stabilizes both 90° and 180° periodic alignment of adjacent layers throughout the entire superlattice. The tunable layer-by-layer switching, coupled with the giant tunneling magnetoresistance of Fe /MgO /Fe junctions, is an appealing combination for three-dimensional spintronic memories and logic devices.

  7. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    PubMed Central

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F.Y.; Gao, X. S.; Dai, J. Y.

    2015-01-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. PMID:26239505

  8. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

    NASA Astrophysics Data System (ADS)

    Cubukcu, Murat; Boulle, Olivier; Drouard, Marc; Garello, Kevin; Onur Avci, Can; Mihai Miron, Ioan; Langer, Juergen; Ocker, Berthold; Gambardella, Pietro; Gaudin, Gilles

    2014-01-01

    We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 1011 A/m2 in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

  9. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.

    PubMed

    Yau, H M; Yan, Z B; Chan, N Y; Au, K; Wong, C M; Leung, C W; Zhang, F Y; Gao, X S; Dai, J Y

    2015-01-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. PMID:26239505

  10. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

    SciTech Connect

    Cubukcu, Murat; Boulle, Olivier; Drouard, Marc; Mihai Miron, Ioan; Gaudin, Gilles; Langer, Juergen; Ocker, Berthold

    2014-01-27

    We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell.

  11. Distinctive uniaxial magnetic anisotropy and positive magnetoresistance in (110)-oriented Fe3O4 films

    NASA Astrophysics Data System (ADS)

    Dho, Joonghoe; Kim, Byeong-geon; Ki, Sanghoon

    2015-04-01

    Magnetite (Fe3O4) films were synthesized on (110)-oriented MgO, MgAl2O4, and SrTiO3 substrates for comparative studies of the substrates' effects on magnetic and magnetoresistance properties of the films. For the [-110] direction, the hysteresis loops of the Fe3O4 film on MgAl2O4 exhibited a good squareness with the largest coercivity of ˜1090 Oe, and the ratio of remanent magnetization to saturation magnetization was ˜0.995. For the [001] direction, positive magnetoresistance in weak magnetic fields was most distinct for the (110) SrTiO3 substrate with the largest lattice mismatch. Positive magnetoresistance in the (110) Fe3O4 films was presumably affected by imperfect atomic arrangements at anti-phase boundaries.

  12. Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction

    NASA Astrophysics Data System (ADS)

    Pan, Yang; Wen-Jie, Chen; Jiao, Wang; Zhao-Wen, Yan; Jian-Li, Qiao; Tong, Xiao; Xin, Wang; Zheng-Peng, Pang; Jian-Hong, Yang

    2016-04-01

    The magnetoresistance effect of a p–n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation-recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equations are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance (MR) can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.

  13. Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire

    NASA Astrophysics Data System (ADS)

    Wołoszyn, M.; Spisak, B. J.; Wójcik, P.; Adamowski, J.

    2016-09-01

    We have studied the magnetotransport through an indium antimonide (InSb) nanowire grown in [111] direction, with a geometric constriction and in an external magnetic field applied along the nanowire axis. We have found that the magnetoresistance is negative for the narrow constriction, nearly zero for the constriction of some intermediate radius, and takes on positive values for the constriction with the radius approaching that of the nanowire. For all magnitudes of the magnetic field, the radius of constriction at which the change of the magnetoresistance sign takes place has been found to be almost the same as long as other geometric parameters of the nanowire are fixed. The sign reversing of the magnetoresistance is explained as a combined effect of two factors: the influence of the constriction on the transverse states and the spin Zeeman effect.

  14. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

    NASA Astrophysics Data System (ADS)

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; Dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O.; Schmidt, Marcus; Grushin, Adolfo G.; Bardarson, Jens H.; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-05-01

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample.

  15. Angular Magnetoresistance and Hall Measurements in New Dirac Material, ZrSiS

    NASA Astrophysics Data System (ADS)

    Ali, Mazhar; Schoop, Leslie; Lotsch, Bettina; Parkin, Stuart

    Dirac and Weyl materials have shot to the forefront of condensed matter research in the last few years. Recently, the square-net material, ZrSiS, was theorized and experimentally shown (via ARPES) to host several highly dispersive Dirac cones, including the first Dirac cone demanded by non-symmorphic symmetry in a Si square net. Here we report the magnetoresistance and Hall Effect measurements in this compound. ZrSiS samples with RRR = 40 were found to have MR values up to 6000% at 2 K, be predominantly p-type with a carrier concentration of ~8 x 1019 cm-3 and mobility ~8500 cm2/Vs. Angular magnetoresistance measurements reveal a peculiar behavior with multiple local maxima, depending on field strength, indicating of a sensitive and sensitive Fermi surface. SdH oscillations analysis confirms Hall and angular magnetoresistance measurements. These results, in the context of the theoretical and ARPES results, will be discussed.

  16. Impact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Morgan, Caitlin; Misiorny, Maciej; Metten, Dominik; Heedt, Sebastian; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

    2016-05-01

    We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of τs=1.1 ns , a value comparable with those found in silicon- or graphene-based spin-valve devices.

  17. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    PubMed

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-01-01

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors. PMID:25990638

  18. Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP

    PubMed Central

    Arnold, Frank; Shekhar, Chandra; Wu, Shu-Chun; Sun, Yan; dos Reis, Ricardo Donizeth; Kumar, Nitesh; Naumann, Marcel; Ajeesh, Mukkattu O.; Schmidt, Marcus; Grushin, Adolfo G.; Bardarson, Jens H.; Baenitz, Michael; Sokolov, Dmitry; Borrmann, Horst; Nicklas, Michael; Felser, Claudia; Hassinger, Elena; Yan, Binghai

    2016-01-01

    Weyl semimetals (WSMs) are topological quantum states wherein the electronic bands disperse linearly around pairs of nodes with fixed chirality, the Weyl points. In WSMs, nonorthogonal electric and magnetic fields induce an exotic phenomenon known as the chiral anomaly, resulting in an unconventional negative longitudinal magnetoresistance, the chiral-magnetic effect. However, it remains an open question to which extent this effect survives when chirality is not well-defined. Here, we establish the detailed Fermi-surface topology of the recently identified WSM TaP via combined angle-resolved quantum-oscillation spectra and band-structure calculations. The Fermi surface forms banana-shaped electron and hole pockets surrounding pairs of Weyl points. Although this means that chirality is ill-defined in TaP, we observe a large negative longitudinal magnetoresistance. We show that the magnetoresistance can be affected by a magnetic field-induced inhomogeneous current distribution inside the sample. PMID:27186980

  19. Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-01

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi2Te3 topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  20. Temperature dependence of magnetoresistance in GdFeCo/Pt heterostructure

    NASA Astrophysics Data System (ADS)

    Okuno, Takaya; Kim, Kab-Jin; Tono, Takayuki; Kim, Sanghoon; Moriyama, Takahiro; Yoshikawa, Hiroki; Tsukamoto, Arata; Ono, Teruo

    2016-07-01

    The temperature dependence of magnetoresistance is investigated in ferrimagnetic GdFeCo/Pt heterostructures. An anomalous Hall effect (AHE) shows a monotonic behavior in temperature even across the magnetization compensation temperature T M, implying that the FeCo moment is responsible for the magnetotransport properties. An anisotropic magnetoresistance (AMR) exhibits a steep increase at low temperatures, which we ascribe to the contribution of a weak antilocalization in an amorphous GdFeCo layer. A spin Hall magnetoresistance (SMR) is found to exist in ferrimagnet/Pt systems and shows a moderate temperature dependence, in contrast to the SMR in YIG/Pt where a significant temperature dependence was observed. These results provide a basic understanding of the magnetotransport in amorphous ferrimagnets/heavy metal heterostructures.