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Sample records for magnetron ion source

  1. Linear ion source with magnetron hollow cathode discharge

    SciTech Connect

    Tang, D.L.; Pu, S.H.; Wang, L.S.; Qiu, X.M.; Chu, Paul K.

    2005-11-15

    A linear ion source with magnetron hollow cathode discharge is described in this paper. The linear ion source is based on an anode layer thruster with closed-drift electrons that move in a closed path in the ExB fields. An open slit configuration is designed at the end of the ion source for the extraction of the linear ion beam produced by the magnetron hollow cathode discharge. The special configurations enable uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. The ion current density and uniformity were experimentally evaluated. Using the ion source, surface modification was conducted on polyethylene terephthalate polymer films to improve the adhesion strength with ZnS coatings.

  2. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current. PMID:22380320

  3. Hollow target magnetron-sputter-type solid material ion source

    SciTech Connect

    Sasaki, D.; Ieki, S.; Kasuya, T.; Wada, M.

    2012-02-15

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al{sup +} and Ar{sup +} ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 {mu}A, with the Al{sup +} ion beam occupying 30% of the total beam current.

  4. Unbalance magnetron plasma source for ion mass-separator

    NASA Astrophysics Data System (ADS)

    Paperny, V. L.; Krasov, V. I.; Astrakchantsev, N. V.; Lebedev, N. V.

    2014-11-01

    The report presents the results of the preliminary studies characteristics of an unbalanced magnetron plasma source supplied with the transport system based on a curved magnetic field. The aim of these studies was to recognize if the system is suitable, in principle, for mass-separation of a multi-component plasma flow. The magnetron source has 50 mm diameter cathode manufactured of an alloy composed of Cu (64%), Pb (22.5%) and admixtures, about of 14% (Al, Zn, C). By means of an immersion time-of-flight spectrometer, a spatial distribution of ions of the cathode material was measured through the system output cross-section. Distribution of atom of these elements was measured here by the X-ray fluorescence spectrometry as well. Both methods showed that the ions of the lighter element (Cu) were concentrated in the inner part of the plasma flow deflected by the magnetic field while the distribution of the heavy element (Pb) was shifted toward the outer area of the flow. The similar effect was observed for each couple of the elements. Such a system is promising for use in plasma technology of reprocessing spent nuclear fuel, namely for separation heavy radioactive fission product from nuclear waste.

  5. ION MAGNETRON

    DOEpatents

    Gow, J.D.; Layman, R.W.

    1962-10-31

    A magnetohydrodynamic device or plasma generator of the ion magnetron class is described wherein a long central electrode is disposed along the axis of an evacuated cylinder. A radial electric field and an axial magnetic field are provided between the cylsnder and the electrode, forming a plasma trapping and heating region. For maximum effectiveness, neutral particles from the cylinder wall must be prevented from entering such region This is effected by forming a cylindrical sheath of electrons near the cylinder wall for ionizing undesired neutral particles, which are then trapped and removed by the magnetic field. An annular filament at one end of the device provides the electrons, which follow the axial magnetic field to a reflecting electrode at the opposite end of the device. (AEC)

  6. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Silze, A.

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  7. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Silze, A

    2014-05-01

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10(10) cm(-3) to 1 × 10(11) cm(-3), when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10(18) atoms/s for aluminum, which meets the demand for the production of a milliampere Al(+) ion beam. PMID:24880358

  8. Characteristics of end Hall ion source with magnetron hollow cathode discharge

    NASA Astrophysics Data System (ADS)

    Tang, Deli; Wang, Lisheng; Pu, Shihao; Cheng, Changming; Chu, Paul K.

    2007-04-01

    An end Hall ion source with magnetron hollow cathode discharge is described. The source is suitable for high current, low energy ion beam applications such as Hall current plasma accelerators. The end Hall ion source is based on an anode layer thruster with closed drift electrons that move in a closed path in the E × B field. Only a simple magnetron power supply is used in the ion source. The special configuration enables uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. In our evaluation, the ion beam current was measured by a circular electrostatic probe and the energy distribution of the ion beam was measured by a retarding potential analyzer (RPA). An ion beam current density of up to 10 mA/cm2 was obtained at a mean ion energy of 100-250 eV using Ar or O2. The ion source can be operated in a stable fashion at a discharge voltage between 200 and 500 V and without additional electron triggering. The discharge power of the ion source can be easily changed by adjusting the gas flow rate and anode voltage. No water cooling is needed for power from 500 W to 2 kW. The simple and rugged ion source is suitable for industrial applications such as deposition of thin films with enhanced adhesion. The operational characteristics of the ion source are experimentally determined and discussed.

  9. Hollow metal target magnetron sputter type radio frequency ion source.

    PubMed

    Yamada, N; Kasuya, T; Tsubouchi, N; Wada, M

    2014-02-01

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure. PMID:24593636

  10. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  11. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  12. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  13. A new solid state extractor pulser for the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S.; Lackey, J.; Larson, J.; Triplett, K.

    2015-10-05

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  14. A new solid state extractor pulser for the FNAL magnetron ion source

    NASA Astrophysics Data System (ADS)

    Bollinger, D. S.; Lackey, J.; Larson, J.; Triplett, K.

    2016-02-01

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  15. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al+ ion beam

    NASA Astrophysics Data System (ADS)

    Weichsel, T.; Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al+ ion current with a density of 167 μA/cm2 is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 109 cm-3 to 6 × 1010 cm-3 and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  16. Reduction of beam current noise in the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S. Karns, P. R. Tan, C. Y.

    2015-04-08

    The new FNAL Injector Line with a circular dimple magnetron ion source has been operational since December of 2012. Since the new injector came on line there have been variations in the H- beam current flattop observed near the downstream end of the Linac. Several different cathode geometries including a hollow cathode suggested by Dudnikov [1] were tried. Previous studies also showed that different mixtures of hydrogen and nitrogen had an effect on beam current noise [2]. We expanded on those studies by trying mixtures ranging from (0.25% nitrogen, 99.75% hydrogen) to (3% nitrogen, 97% hydrogen). The results of these studies in our test stand will be presented in this paper.

  17. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Philipp, A.

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  18. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al⁺ ion beam.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Philipp, A

    2015-09-01

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology-a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al(+) ion current with a density of 167 μA/cm(2) is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10(9) cm(-3) to 6 × 10(10) cm(-3) and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge. PMID:26429434

  19. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    SciTech Connect

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  20. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  1. Ion source

    DOEpatents

    Leung, Ka-Ngo; Ehlers, Kenneth W.

    1984-01-01

    A magnetic filter for an ion source reduces the production of undesired ion species and improves the ion beam quality. High-energy ionizing electrons are confined by the magnetic filter to an ion source region, where the high-energy electrons ionize gas molecules. One embodiment of the magnetic filter uses permanent magnets oriented to establish a magnetic field transverse to the direction of travel of ions from the ion source region to the ion extraction region. In another embodiment, low energy 16 eV electrons are injected into the ion source to dissociate gas molecules and undesired ion species into desired ion species.

  2. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, M.; Johnson, R.P.; Popovic, M.; Moretti, A.; /Fermilab

    2009-05-01

    Magnetrons are low-cost highly-efficient microwave sources, but they have several limitations, primarily centered about the phase and frequency stability of their output. When the stability requirements are low, such as for medical accelerators or kitchen ovens, magnetrons are the very efficient power source of choice. But for high energy accelerators, because of the need for frequency and phase stability - proton accelerators need 1-2 degrees source phase stability, and electron accelerators need .1-.2 degrees of phase stability - they have rarely been used. We describe a novel variable frequency cavity technique which will be utilized to phase and frequency lock magnetrons.

  3. ION SOURCE

    DOEpatents

    Martina, E.F.

    1958-04-22

    An improved ion source particularly adapted to provide an intense beam of ions with minimum neutral molecule egress from the source is described. The ion source structure includes means for establishing an oscillating electron discharge, including an apertured cathode at one end of the discharge. The egress of ions from the source is in a pencil like beam. This desirable form of withdrawal of the ions from the plasma created by the discharge is achieved by shaping the field at the aperture of the cathode. A tubular insulator is extended into the plasma from the aperture and in cooperation with the electric fields at the cathode end of the discharge focuses the ions from the source,

  4. Development of negative ion source at the IPP Nagoya University

    SciTech Connect

    Kuroda, T; Okamura, H; Kaneko, O; Oka, Y

    1980-01-01

    Preliminary experiments have been made to develop a high current H/sup -/ ion surface for a neutral beam injector. Initially, an H/sup -/ ion source of the magnetron type has been investigated in order to determine its physical and technical problems. A second plasma source for negative ion production is under construction, which is based on controlled plasma production. This paper describes preliminary experimental results of the magnetron ion source and some features in the new type of plasma source.

  5. ION SOURCE

    DOEpatents

    Leland, W.T.

    1960-01-01

    The ion source described essentially eliminater the problem of deposits of nonconducting materials forming on parts of the ion source by certain corrosive gases. This problem is met by removing both filament and trap from the ion chamber, spacing them apart and outside the chamber end walls, placing a focusing cylinder about the filament tip to form a thin collimated electron stream, aligning the cylinder, slits in the walls, and trap so that the electron stream does not bombard any part in the source, and heating the trap, which is bombarded by electrons, to a temperature hotter than that in the ion chamber, so that the tendency to build up a deposit caused by electron bombardment is offset by the extra heating supplied only to the trap.

  6. ION SOURCE

    DOEpatents

    Blue, C.W.; Luce, J.S.

    1960-07-19

    An ion source is described and comprises an arc discharge parallel to the direction of and inside of a magnetic field. an accelerating electrode surrounding substantially all of the discharge except for ion exit apertures, and means for establishing an electric field between that electrode and the arc discharge. the electric field being oriented at an acute angle to the magnetic field. Ions are drawn through the exit apertures in the accelrating electrcde in a direction substantially divergent to the direction of the magnetic field and so will travel in a spiral orbit along the magnetic field such that the ions will not strike the source at any point in their orbit within the magnetic field.

  7. ION SOURCE

    DOEpatents

    Bell, W.A. Jr.; Love, L.O.; Prater, W.K.

    1958-01-28

    An ion source is presented capable of producing ions of elements which vaporize only at exceedingly high temperatures, i.e.,--1500 degrees to 3000 deg C. The ion source utilizes beams of electrons focused into a first chamber housing the material to be ionized to heat the material and thereby cause it to vaporize. An adjacent second chamber receives the vaporized material through an interconnecting passage, and ionization of the vaporized material occurs in this chamber. The ionization action is produced by an arc discharge sustained between a second clectron emitting filament and the walls of the chamber which are at different potentials. The resultant ionized material egresses from a passageway in the second chamber. Using this device, materials which in the past could not be processed in mass spectometers may be satisfactorily ionized for such applications.

  8. Improved negative ion source

    DOEpatents

    Delmore, J.E.

    1984-05-01

    A method and apparatus for providing a negative ion source accelerates electrons away from a hot filament electron emitter into a region of crossed electric and magnetic fields arranged in a magnetron configuration. During a portion of the resulting cycloidal path, the electron velocity is reduced below its initial value. The electron accelerates as it leaves the surface at a rate of only slightly less than if there were no magnetic field, thereby preventing a charge buildup at the surface of the emitter. As the electron traverses the cycloid, it is decelerated during the second, third, and fourth quadrants, then reaccelerated as it approaches the end of the fourth quadrant to regain its original velocity. The minimum velocity occurs during the fourth quadrant, and corresponds to an electron temperature of 200 to 500/sup 0/C for the electric and magnetic fields commonly encountered in the ion sources of magnetic sector mass spectrometers. An ion source using the above-described thermalized electrons is also disclosed.

  9. Ion source

    DOEpatents

    Brobeck, W. M.

    1959-04-14

    This patent deals with calutrons and more particularly to an arrangement therein whereby charged bottles in a calutron source unit may be replaced without admitting atmospheric air to the calutron vacuum chamber. As described, an ion unit is disposed within a vacuum tank and has a reservoir open toward a wall of the tank. A spike projects from the source into the reservoir. When a charge bottle is placed in the reservoir, the spike breaks a frangible seal on the bottle. After the contents of the bottle are expended the bottle may be withdrawn and replaced with another charge bottle by a vacuum lock arrangement in conjunction with an arm for manipulating the bottle.

  10. ION SOURCE

    DOEpatents

    Brobeck, W.M.

    1959-04-14

    This patent deals with calutrons and more particularly to an arrangement therein whereby charged bottles in a calutron source unit may be replaced without admitting atmospheric air to the calutron vacuum chamber. As described, an ion unit is disposed within a vacuum tank and has a reservoir open toward a wall of the tank. A spike projects from thc source into the reservoir. When a charge bottle is placed in the reservoir, the spike breaks a frangible seal on the bottle. After the contents of the bottle are expended the bottle may be withdrawn and replaced with another charge bottle by a varuum lock arrangement in conjunction with an arm for manipulating the bottle.

  11. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, Michael; Johnson, Rolland

    2014-09-12

    There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

  12. Magnetron deposition of TCO films using ion beam

    NASA Astrophysics Data System (ADS)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  13. Cesium in hydrogen negative-ion sources

    SciTech Connect

    Belchenko, Yu.I.; Davydenko, V.I.

    2006-03-15

    Experimental data on the dynamics of cesium particles in the pulsed magnetron and Penning surface-plasma ion sources are presented. Cesium escape from the source emission apertures and the cesium ion current to discharge electrodes was measured. The low value of cesium flux from the source was detected. An intense cesium ion current to the cathode (up to 0.8 A/cm{sup 2}) was measured. The high value of cesium ion current to surface-plasma source cathode confirms the cesium circulation near the cathode.

  14. Linac4 H⁻ ion sources.

    PubMed

    Lettry, J; Aguglia, D; Alessi, J; Andersson, P; Bertolo, S; Briefi, S; Butterworth, A; Coutron, Y; Dallocchio, A; David, N; Chaudet, E; Faircloth, D; Fantz, U; Fink, D A; Garlasche, M; Grudiev, A; Guida, R; Hansen, J; Haase, M; Hatayama, A; Jones, A; Koszar, I; Lallement, J-B; Lombardi, A M; Machado, C; Mastrostefano, C; Mathot, S; Mattei, S; Moyret, P; Nisbet, D; Nishida, K; O'Neil, M; Paoluzzi, M; Scrivens, R; Shibata, T; Steyaert, D; Thaus, N; Voulgarakis, G

    2016-02-01

    CERN's 160 MeV H(-) linear accelerator (Linac4) is a key constituent of the injector chain upgrade of the Large Hadron Collider that is being installed and commissioned. A cesiated surface ion source prototype is being tested and has delivered a beam intensity of 45 mA within an emittance of 0.3 π ⋅ mm ⋅ mrad. The optimum ratio of the co-extracted electron- to ion-current is below 1 and the best production efficiency, defined as the ratio of the beam current to the 2 MHz RF-power transmitted to the plasma, reached 1.1 mA/kW. The H(-) source prototype and the first tests of the new ion source optics, electron-dump, and front end developed to minimize the beam emittance are presented. A temperature regulated magnetron H(-) source developed by the Brookhaven National Laboratory was built at CERN. The first tests of the magnetron operated at 0.8 Hz repetition rate are described. PMID:26932021

  15. Linac4 H- ion sources

    NASA Astrophysics Data System (ADS)

    Lettry, J.; Aguglia, D.; Alessi, J.; Andersson, P.; Bertolo, S.; Briefi, S.; Butterworth, A.; Coutron, Y.; Dallocchio, A.; David, N.; Chaudet, E.; Faircloth, D.; Fantz, U.; Fink, D. A.; Garlasche, M.; Grudiev, A.; Guida, R.; Hansen, J.; Haase, M.; Hatayama, A.; Jones, A.; Koszar, I.; Lallement, J.-B.; Lombardi, A. M.; Machado, C.; Mastrostefano, C.; Mathot, S.; Mattei, S.; Moyret, P.; Nisbet, D.; Nishida, K.; O'Neil, M.; Paoluzzi, M.; Scrivens, R.; Shibata, T.; Steyaert, D.; Thaus, N.; Voulgarakis, G.

    2016-02-01

    CERN's 160 MeV H- linear accelerator (Linac4) is a key constituent of the injector chain upgrade of the Large Hadron Collider that is being installed and commissioned. A cesiated surface ion source prototype is being tested and has delivered a beam intensity of 45 mA within an emittance of 0.3 π ṡ mm ṡ mrad. The optimum ratio of the co-extracted electron- to ion-current is below 1 and the best production efficiency, defined as the ratio of the beam current to the 2 MHz RF-power transmitted to the plasma, reached 1.1 mA/kW. The H- source prototype and the first tests of the new ion source optics, electron-dump, and front end developed to minimize the beam emittance are presented. A temperature regulated magnetron H- source developed by the Brookhaven National Laboratory was built at CERN. The first tests of the magnetron operated at 0.8 Hz repetition rate are described.

  16. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  17. Performance of the Magnetron H- Source on the BNL 200 MeV Linac

    NASA Astrophysics Data System (ADS)

    Alessi, James G.

    2002-12-01

    A magnetron surface plasma H- ion source has been used at Brookhaven since 1982 for injection into the 200 MeV linac. Since 1989, this source has operated with a circular aperture, injecting into an RFQ. The source typically produces 90-100 mA of H- at 35 keV, in 700 μs pulses at up to 10 Hz. The arc parameters are -15 A, 150 V, and the extracted e/H- ratio is 1/2. Ions are extracted from a 2.8 mm diameter aperture (J=1.6 A/cm2). The emittance is approximately ɛn, rms = 0.4 π mm mrad. The performance is very reliable, operating continuously for -6 months, with essentially no parameter adjustments required once the source is stabilized.

  18. Unbalanced magnetron ion-assisted deposition and property modification of thin films

    SciTech Connect

    Savvides, N.; Window, B.

    1986-05-01

    Unbalanced magnetron (UM-gun) sputtering sources with the unique characteristic of a high deposition rate and concomitant high ion flux represent an exciting new development in ion-assisted deposition of thin films. We have used a UM-gun capable of producing ion current densities up to 5 mA cm/sup -2/ (ion flux 3 x 10/sup 16/ cm/sup -2/ s/sup -1/) when operated at a power of 500 W to produce a variety of thin films of amorphous and crystalline materials by varying both the bombarding ion energy in the range 2--100 eV and the ion/atom arrival rate ratio in the range 0.4--10. The great flexibility and usefulness of UM-guns is demonstrated with examples which include (a) hard diamondlike a-C films prepared under very low ion energy (13--16 eV) bombardment which possess a metastable bonding configuration consisting of a mixture of tetrahedral and trigonal coordination that varies with ion energy, (b) hard and wear-resistant TiN films whose electrical and optical properties change dramatically with ion bombardment, and (c) Ni/Cr alloy films showing ion-induced structural modifications.

  19. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  20. Improved ion source

    DOEpatents

    Leung, K.N.; Ehlers, K.W.

    1982-05-04

    A magnetic filter for an ion source reduces the production of undesired ion species and improves the ion beam quality. High-energy ionizing electrons are confined by the magnetic filter to an ion source region, where the high-energy electrons ionize gas molecules. One embodiment of the magnetic filter uses permanent magnets oriented to establish a magnetic field transverse to the direction of travel of ions from the ion source region to the ion extraction region. In another embodiment, low energy 16 eV electrons are injected into the ion source to dissociate gas molecules and undesired ion species into desired ion species,

  1. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. I. Negative ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Mass and energy spectra of negative ions in magnetron sputtering discharges have been investigated with an energy-dispersive mass spectrometer. The dc magnetrons have been operated in the same reactive Ar/O{sub 2} atmosphere but with three different target materials: Cu, In, and W. Besides negative ions of the working gas, a variety of target metal containing negative molecular ions were found in the discharge. Their occurrence is strongly dependent on the target material. It has been correlated to the electron affinity and the bond strength of the molecules which has been calculated by density functional theory. Energy spectra of the negative ions exhibit three contributions that are clearly distinguishable. Their different origin is discussed as electron attachment in the gas phase and at the target surface, and molecule fragmentation during transport from target to substrate. The latter two contributions again significantly deviate for different target material. The high-energy part of the spectra has been analyzed with respect to the energy the particles gain upon release from the surface. It suggests that bigger molecules formed on the surface are released by ion-assisted desorption.

  2. A self-sputtering ion source: A new approach to quiescent metal ion beams

    SciTech Connect

    Oks, Efim M.; Anders, Andre

    2009-09-03

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield like Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering (HIPIMS) discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm2 at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  3. A self-sputtering ion source: A new approach to quiescent metal ion beams

    SciTech Connect

    Oks, Efim

    2010-02-15

    A new metal ion source is presented based on sustained self-sputtering plasma in a magnetron discharge. Metals exhibiting high self-sputtering yield such as Cu, Ag, Zn, and Bi can be used in a high-power impulse magnetron sputtering discharge such that the plasma almost exclusively contains singly charged metal ions of the target material. The plasma and extracted ion beam are quiescent. The ion beams consist mostly of singly charged ions with a space-charge limited current density which reached about 10 mA/cm{sup 2} at an extraction voltage of 45 kV and a first gap spacing of 12 mm.

  4. Negative ion source with hollow cathode discharge plasma

    DOEpatents

    Hershcovitch, Ady; Prelec, Krsto

    1983-01-01

    A negative ion source of the type where negative ions are formed by bombarding a low-work-function surface with positive ions and neutral particles from a plasma, wherein a highly ionized plasma is injected into an anode space containing the low-work-function surface. The plasma is formed by hollow cathode discharge and injected into the anode space along the magnetic field lines. Preferably, the negative ion source is of the magnetron type.

  5. Negative ion source with hollow cathode discharge plasma

    DOEpatents

    Hershcovitch, A.; Prelec, K.

    1980-12-12

    A negative ion source of the type where negative ions are formed by bombarding a low-work-function surface with positive ions and neutral particles from a plasma, wherein a highly ionized plasma is injected into an anode space containing the low-work-function surface is described. The plasma is formed by hollow cathode discharge and injected into the anode space along the magnetic field lines. Preferably, the negative ion source is of the magnetron type.

  6. Spherical ion source

    NASA Technical Reports Server (NTRS)

    Hall, L. G.

    1969-01-01

    Radial focusing of electrons in ion source produces greater ion densities, resulting in higher resolution and focus capability for a given source volume. Electron beam is focused near exit aperture by spherical fields. High density ions allow focusing ion beam to high density at echo, allowing high current through small aperture.

  7. Tungsten coatings deposited on CFC tiles by the combined magnetron sputtering and ion implantation technique

    NASA Astrophysics Data System (ADS)

    Ruset, C.; Grigore, E.; Maier, H.; Neu, R.; Li, X.; Dong, H.; Mitteau, R.; Courtois, X.

    2007-03-01

    Combined magnetron sputtering and ion implantation (CMSII) is a deposition technique involving simultaneous magnetron sputtering and high energy ion bombardment of the coating during its growth. A high voltage pulse discharge (U=40 kV, τ=20 μs, f=25 Hz) is superposed over the magnetron deposition and in this way, positive ions are accelerated to the components to be coated, bombarding initially the substrate and then the coating itself. In the framework of the ITER-like wall project this method was applied to produce nanostructured W coatings on the carbon fibre composite (CFC) substrate. These coatings have been characterized in terms of adhesion, thickness, structure and resistance to high thermal loads (up to 23.5 MW m-2). Based on the results of these tests, which are presented in this paper, CMSII technology was selected for coating about 1100 tiles with a 10 μm tungsten layer for the JET first wall and divertor.

  8. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. II. Positive ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Spectra of the ion mass and energy distributions of positive ions in reactive (Ar/O{sub 2}) and nonreactive (Ar) dc magnetron sputtering discharges have been investigated by energy-resolved mass spectrometry. The results of three sputter target materials, i.e., Cu, In, and W are compared to each other. Besides the main gas constituents, mass spectra reveal a variety of molecular ions which are dependent on the target material. In reactive mode, ArO{sup +} is always observed in Ar/O{sub 2} but molecules containing Ar and the metal were exclusively found for the Cu target. The occurrence of the different ions is explained in the context of their bond strengths obtained from density functional theory calculations. The energy spectra generally contain the known low-energy peak corresponding to the plasma potential. Differently extended high-energy tails due to sputtered material were observed for the different targets. Besides these, high-energetic ions were detected with up to several 100 eV. Their energies are significantly different for Ar{sup +} and O{sup +} with Ar{sup +} strongly depending on the target material. The spectra are discussed together with results from transport of ions in matter (TRIM) calculation to elucidate the origin of these energetic ions.

  9. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface. PMID:20355462

  10. Industrial ion source technology

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.

    1976-01-01

    A 30 cm electron bombardment ion source was designed and fabricated for micromachining and sputtering applications. This source has a multipole magnetic field that employs permanent magnets between permeable pole pieces. An average ion current density of 1 ma/sq cm with 500 eV argon ions was selected as a design operating condition. The ion beam at this operating condition was uniform and well collimated, with an average variation of plus or minus 5 percent over the center 20 cm of the beam at distances up to 30 cm from the ion source. A variety of sputtering applications were undertaken with a small 10 cm ion source to better understand the ion source requirements in these applications. The results of these experimental studies are also included.

  11. Comparative analysis of continuous-wave surface-plasma negative ion sources with various discharge geometry

    SciTech Connect

    Belchenko, Yu; Sanin, A.; Sotnikov, O.

    2014-02-15

    Negative ion extraction from continuous-wave (CW) magnetron and semiplanotron discharges was studied and it was compared with that for the source with Penning electrode geometry. The CW negative ion beam up current to 13 mA was extracted from the magnetron source with emission aperture of 3.5 mm in diameter, while the beam with current up to 8 mA was obtained from the semiplanotron source modification. Characteristics of CW magnetron and semiplanotron sources are presented and analyzed.

  12. Metal Ion Sources for Ion Beam Implantation

    SciTech Connect

    Zhao, W. J.; Zhao, Z. Q.; Ren, X. T.

    2008-11-03

    In this paper a theme touched upon the progress of metal ion sources devoted to metal ion beam implantation (MIBI) will be reviewed. A special emphasis will be given to some kinds of ion sources such as ECR, MEVVA and Cluster ion sources. A novel dual hollow cathode metal ion source named DUHOCAMIS will be introduced and discussed.

  13. Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

    NASA Technical Reports Server (NTRS)

    Thornton, J. A.; Lamb, J. L.

    1984-01-01

    Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

  14. PULSED ION SOURCE

    DOEpatents

    Anderson, C.E.; Ehlers, K.W.

    1958-06-17

    An ion source is described for producing very short high density pulses of ions without bcam scattering. The ions are created by an oscillating electron discharge within a magnetic field. After the ions are drawn from the ionization chamber by an accelerating electrode the ion beam is under the influence of the magnetic field for separation of the ions according to mass and, at the same time, passes between two neutralizing plntes maintained nt equal negative potentials. As the plates are formed of a material having a high ratio of secondary electrons to impinging ions, the ion bombardment of the plntes emits electrons which neutralize the frirge space-charge of the beam and tend to prevent widening of the beam cross section due to the mutual repulsion of the ions.

  15. ION SOURCE FOR CALUTRONS

    DOEpatents

    Tolmie, J.R.

    1958-09-16

    An improvement is presented in ion sources of the type employed in calutron devices. The described ion source has for its inventive contribution the incorporation of a plate-like cathode having the general configuration of a polygon including a given number of apices. When a polyphase source of current has a phase connected to each of the apices, the cathode is heated and rendered electron emissive. This particular cathode configuration is of sturdy construction and provides unuform emission over a considerable area.

  16. A cookbook for building a high-current dimpled H– magnetron source for accelerators

    DOE PAGESBeta

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H– magnetron source has been built at Fermilab for supplying H– beam to the entire accelerator complex. Despite many decades of expertise with slit H– magnetron sources at Fermilab, we were faced with many challenges from the dimpled H– magnetron source, which needed to be overcome in order to make it operational. Dimpled H– sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type ofmore » source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H– magnetron sources.« less

  17. Pulsed ion beam source

    DOEpatents

    Greenly, John B.

    1997-01-01

    An improved pulsed ion beam source having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center.

  18. Argon–oxygen dc magnetron discharge plasma probed with ion acoustic waves

    SciTech Connect

    Saikia, Partha Saikia, Bipul Kumar; Goswami, Kalyan Sindhu; Phukan, Arindam

    2014-05-15

    The precise determination of the relative concentration of negative ions is very important for the optimization of magnetron sputtering processes, especially for those undertaken in a multicomponent background produced by adding electronegative gases, such as oxygen, to the discharge. The temporal behavior of an ion acoustic wave excited from a stainless steel grid inside the plasma chamber is used to determine the relative negative ion concentration in the magnetron discharge plasma. The phase velocity of the ion acoustic wave in the presence of negative ions is found to be faster than in a pure argon plasma, and the phase velocity increases with the oxygen partial pressure. Optical emission spectroscopy further confirms the increase in the oxygen negative ion density, along with a decrease in the argon positive ion density under the same discharge conditions. The relative negative ion concentration values measured by ion acoustic waves are compared with those measured by a single Langmuir probe, and a similarity in the results obtained by both techniques is observed.

  19. Microwave ion source

    DOEpatents

    Leung, Ka-Ngo; Reijonen, Jani; Thomae, Rainer W.

    2005-07-26

    A compact microwave ion source has a permanent magnet dipole field, a microwave launcher, and an extractor parallel to the source axis. The dipole field is in the form of a ring. The microwaves are launched from the middle of the dipole ring using a coaxial waveguide. Electrons are heated using ECR in the magnetic field. The ions are extracted from the side of the source from the middle of the dipole perpendicular to the source axis. The plasma density can be increased by boosting the microwave ion source by the addition of an RF antenna. Higher charge states can be achieved by increasing the microwave frequency. A xenon source with a magnetic pinch can be used to produce intense EUV radiation.

  20. Selective ion source

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    A ion source is described wherein selected ions maybe extracted to the exclusion of unwanted ion species of higher ionization potential. Also described is a method of producing selected ions from a compound, such as P.sup.+ from PH.sub.3. The invention comprises a plasma chamber, an electron source, a means for introducing a gas to be ionized by electrons from the electron source, means for limiting electron energy from the electron source to a value between the ionization energy of the selected ion species and the greater ionization energy of an unwanted ion specie, and means for extracting the target ion specie from the plasma chamber. In one embodiment, the electrons are generated in a plasma cathode chamber immediately adjacent to the plasma chamber. A small extractor draws the electrons from the plasma cathode chamber into the relatively positive plasma chamber. The energy of the electrons extracted in this manner is easily controlled. The invention is particularly useful for doping silicon with P.sup.+, AS.sup.+, and B.sup.+ without the problematic presence of hydrogen, helium, water, or carbon oxide ions. Doped silicon is important for manufacture of semiconductors and semiconductor devices.

  1. Selective ion source

    DOEpatents

    Leung, K.N.

    1996-05-14

    A ion source is described wherein selected ions maybe extracted to the exclusion of unwanted ion species of higher ionization potential. Also described is a method of producing selected ions from a compound, such as P{sup +} from PH{sub 3}. The invention comprises a plasma chamber, an electron source, a means for introducing a gas to be ionized by electrons from the electron source, means for limiting electron energy from the electron source to a value between the ionization energy of the selected ion species and the greater ionization energy of an unwanted ion specie, and means for extracting the target ion specie from the plasma chamber. In one embodiment, the electrons are generated in a plasma cathode chamber immediately adjacent to the plasma chamber. A small extractor draws the electrons from the plasma cathode chamber into the relatively positive plasma chamber. The energy of the electrons extracted in this manner is easily controlled. The invention is particularly useful for doping silicon with P{sup +}, As{sup +}, and B{sup +} without the problematic presence of hydrogen, helium, water, or carbon oxide ions. Doped silicon is important for manufacture of semiconductors and semiconductor devices. 6 figs.

  2. HIGH VOLTAGE ION SOURCE

    DOEpatents

    Luce, J.S.

    1960-04-19

    A device is described for providing a source of molecular ions having a large output current and with an accelerated energy of the order of 600 kv. Ions are produced in an ion source which is provided with a water-cooled source grid of metal to effect maximum recombination of atomic ions to molecular ions. A very high accelerating voltage is applied to withdraw and accelerate the molecular ions from the source, and means are provided for dumping the excess electrons at the lowest possible potentials. An accelerating grid is placed adjacent to the source grid and a slotted, grounded accelerating electrode is placed adjacent to the accelerating grid. A potential of about 35 kv is maintained between the source grid and accelerating grid, and a potential of about 600 kv is maintained between the accelerating grid and accelerating electrode. In order to keep at a minimum the large number of oscillating electrons which are created when such high voltages are employed in the vicinity of a strong magnetic field, a plurality of high voltage cascaded shields are employed with a conventional electron dumping system being employed between each shield so as to dump the electrons at the lowest possible potential rather than at 600 kv.

  3. BERNAS ION SOURCE DISCHARGE SIMULATION

    SciTech Connect

    RUDSKOY,I.; KULEVOY, T.V.; PETRENKO, S.V.; KUIBEDA, R.P.; SELEZNEV, D.N.; PERSHIN, V.I.; HERSHCOVITCH, A.; JOHNSON, B.M.; GUSHENETS, V.I.; OKS, E.M.; POOLE, H.J.

    2007-08-26

    The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Bemas ion source is the wide used ion source for ion implantation industry. The new simulation code was developed for the Bemas ion source discharge simulation. We present first results of the simulation for several materials interested in semiconductors. As well the comparison of results obtained with experimental data obtained at the ITEP ion source test-bench is presented.

  4. Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

    NASA Astrophysics Data System (ADS)

    Nikolaev, A. G.; Oks, E. M.; Vizir, A. V.; Yushkov, G. Yu.; Frolova, V. P.

    2016-02-01

    Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.

  5. Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow.

    PubMed

    Nikolaev, A G; Oks, E M; Vizir, A V; Yushkov, G Yu; Frolova, V P

    2016-02-01

    Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereas for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%. PMID:26931963

  6. Industrial ion source technology

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.; Robinson, R. S.

    1979-01-01

    In reactive ion etching of Si, varying amounts of O2 were added to the CF4 background. The experimental results indicated an etch rate less than that for Ar up to an O2 partial pressure of about .00006 Torr. Above this O2 pressure, the etch rate with CF4 exceeded that with Ar alone. For comparison the random arrival rate of O2 was approximately equal to the ion arrival rate at a partial pressure of about .00002 Torr. There were also ion source and ion pressure gauge maintenance problems as a result of the use of CF4. Large scale (4 sq cm) texturing of Si was accomplished using both Cu and stainless steel seed. The most effective seeding method for this texturing was to surround the sample with large inclined planes. Designing, fabricating, and testing a 200 sq cm rectangular beam ion source was emphasized. The design current density was 6 mA/sq cm with 500 eV argon ions, although power supply limitations permitted operation to only 2 mA/sq cm. The use of multiple rectangular beam ion sources for continuous processing of wider areas than would be possible with a single source was also studied. In all cases investigated, the most uniform coverage was obtained with 0 to 2 cm beam overlay. The maximum departure from uniform processing at optimum beam overlap was found to be +15%.

  7. Negative hydrogen ion sources for accelerators

    SciTech Connect

    Moehs, D.P.; Peters, J.; Sherman, J.; /Los Alamos

    2005-08-01

    A variety of H{sup -} ion sources are in use at accelerator laboratories around the world. A list of these ion sources includes surface plasma sources with magnetron, Penning and surface converter geometries as well as magnetic-multipole volume sources with and without cesium. Just as varied is the means of igniting and maintaining magnetically confined plasmas. Hot and cold cathodes, radio frequency, and microwave power are all in use, as well as electron tandem source ignition. The extraction systems of accelerator H{sup -} ion sources are highly specialized utilizing magnetic and electric fields in their low energy beam transport systems to produce direct current, as well as pulsed and/or chopped beams with a variety of time structures. Within this paper, specific ion sources utilized at accelerator laboratories shall be reviewed along with the physics of surface and volume H{sup -} production in regard to source emittance. Current research trends including aperture modeling, thermal modeling, surface conditioning, and laser diagnostics will also be discussed.

  8. COASTING ARC ION SOURCE

    DOEpatents

    Foster, J.S. Jr.

    1957-09-10

    An improved ion source is described and in particular a source in which the ions are efficiently removed. The plasma is generated in a tubular amode structure by the oscillation of electrons in an axial magnetic field, as in the Phillips Ion Gage. The novel aspect of the source is the expansion of the plasma as it leaves the anode structure, so as to reduce the ion density at the axis of the anode and present a uniform area of plasma to an extraction grid. The structure utilized in the present patent to expand the plasma comprises flange members of high permeability at the exitgrid end of the amode to diverge the magnetic field adjacent the exit.

  9. CALUTRON ION SOURCE

    DOEpatents

    Lofgren, E.J.

    1959-02-17

    An improvement is described in ion source mechanisms whereby the source structure is better adapted to withstanid the ravages of heat, erosion, and deterioration concomitant with operation of an ion source of the calutron type. A pair of molybdenum plates define the exit opening of the arc chamber and are in thermal contact with the walls of the chamber. These plates are maintained at a reduced temperature by a pair of copper blocks in thermal conducting contact therewith to form subsequent diverging margins for the exit opening.

  10. Nanophotonic Ion Sources

    NASA Astrophysics Data System (ADS)

    Stolee, Jessica A.; Walker, Bennett N.; Chen, Yong; Vertes, Akos

    2010-10-01

    Interactions between laser radiation and photonic structures at elevated laser intensities give rise to the production of positive and negative ions from adsorbates. These new types of ion sources exhibit properties that are significantly different from conventional laser desorption ionization sources. In this contribution comparisons are made between matrix-assisted laser desorption ionization (MALDI) of biomolecules with ion production from laser-induced silicon microcolumn arrays (LISMA) and nanopost arrays (NAPA). The sharp increase of ion yields from the nanophotonic ion sources follow a power law behavior with an exponent of up to n≈7, whereas in the case of MALDI n≈5. The strong field enhancement in the vicinity of the columns and posts scales with their aspect ratio. Slender high aspect ratio posts show reduced laser fluence threshold for ionization. Posts with diameters at or below the thermal diffusion length demonstrate high surface temperatures due to the radial confinement of the deposited energy. As a consequence enhanced fragmentation, i.e., lower survival yield of the molecular ions is observed. The origin of protons in the ionization of adsorbates was identified as the entrapped residues of the solvent.

  11. Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

    SciTech Connect

    Yang, Yuchen; Tanaka, Koichi; Liu, Jason; Anders, André

    2015-03-23

    High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

  12. Pulsed ion beam source

    DOEpatents

    Greenly, J.B.

    1997-08-12

    An improved pulsed ion beam source is disclosed having a new biasing circuit for the fast magnetic field. This circuit provides for an initial negative bias for the field created by the fast coils in the ion beam source which pre-ionize the gas in the source, ionize the gas and deliver the gas to the proper position in the accelerating gap between the anode and cathode assemblies in the ion beam source. The initial negative bias improves the interaction between the location of the nulls in the composite magnetic field in the ion beam source and the position of the gas for pre-ionization and ionization into the plasma as well as final positioning of the plasma in the accelerating gap. Improvements to the construction of the flux excluders in the anode assembly are also accomplished by fabricating them as layered structures with a high melting point, low conductivity material on the outsides with a high conductivity material in the center. 12 figs.

  13. Origin of the energetic ions at the substrate generated during high power pulsed magnetron sputtering of titanium

    NASA Astrophysics Data System (ADS)

    Maszl, C.; Breilmann, W.; Benedikt, J.; von Keudell, A.

    2014-06-01

    High power impulse magnetron sputtering (HiPIMS) plasmas generate energetic metal ions at the substrate as a major difference to conventional direct current magnetron sputtering (dcMS). The origin of these very energetic ions in HiPIMS is still an open issue, which is unravelled using two fast diagnostics: time-resolved mass spectrometry with a temporal resolution of 2 µs and phase resolved optical emission spectroscopy with a temporal resolution of 1 µs. A power scan from dcMS-like to HiPIMS plasmas was performed, with a 2 inch magnetron and a titanium target as sputter source and argon as working gas. Clear differences in the transport as well as the energetic properties of Ar+, Ar2+, Ti+ and Ti2+ were observed. For discharges with highest peak power densities a high energetic group of Ti+ and Ti2+ could be identified with energies of approximately 25 eV and of 50 eV, respectively. A cold group of ions was always present. It is found that hot ions are observed only when the plasma enters the spokes regime, which can be monitored by oscillations in the IV characteristics in the MHz range that are picked up by the used VI probes. These oscillations are correlated with the spokes phenomenon and are explained as an amplification of the Hall current inside the spokes as hot ionization zones. To explain the presence of energetic ions, we propose a double layer (DL) confining the hot plasma inside a spoke: if an atom becomes ionized inside the spokes region it is accelerated because of the DL to higher energies whereas its energy remains unchanged if it is ionized outside. In applying this DL model to our measurements the observed phenomena as well as several measurements from other groups can be explained. Only if spokes and a DL are present can the confined particles gain enough energy to leave the magnetic trap. We conclude from our findings that the spoke phenomenon represents the essence of HiPIMS plasmas, explaining their good performance for material synthesis

  14. Distance-dependent plasma composition and ion energy in high power impulse magnetron sputtering

    SciTech Connect

    Ehiasarian, Arutiun P; Andersson, Joakim; Anders, André

    2010-04-18

    The plasma composition of high power impulse magnetron sputtering (HIPIMS) has been studied for titanium and chromium targets using a combined energy analyser and quadrupole mass spectrometer. Measurements were done at distances from 50 to 300 mm from the sputtering target. Ti and Cr are similar in atomic mass but have significantly different sputter yields, which gives interesting clues on the effect of the target on plasma generation and transport of atoms. The Ti and Cr HIPIMS plasmas operated at a peak target current density of ~;;0.5 A cm-2. The measurements of the argon and metal ion content as well as the ion energy distribution functions showed that (1) singly and doubly charged ions were found for argon as well as for the target metal, (2) the majority of ions were singly charged argon for both metals at all distances investigated, (3) the Cr ion density was maintained to distances further from the target than Ti. Gas rarefaction was identified as a main factor promoting transport of metal ions, with the stronger effect observed for Cr, the material with higher sputter yield. Cr ions were found to displace a significant portion of the gas ions, whereas this was less evident in the Ti case. The observations indicate that the presence of metal vapour promotes charge exchange and reduces the electron temperature and thereby practically prevents the production of Ar2+ ions near the target. The content of higher charge states of metal ions depends on the probability of charge exchange with argon.

  15. Ion source apparatus

    SciTech Connect

    Sugawara, T.; Ito, Y.

    1985-03-19

    A gas is introduced into a discharge chamber of an ion source apparatus, and a gas discharge is performed between a thermionic cathode and an anode. Ions are extracted from the plasma formed in this gas discharge by a grid electrode. The thermionic cathode has a hollow cylindrical shape. A cathode chamber is defined by the thermionic cathode and a cylindrical partition wall supporting it. A columnar auxiliary electrode is coaxially inserted in the thermionic cathode. An A.C. voltage from a power source unit is supplied between the thermionic cathode and the auxiliary electrode such that effective power for keeping the thermionic cathode at a positive potential with respect to the auxiliary electrode is higher than that for keeping the auxiliary electrode at a positive potential with respect to the thermionic cathode.

  16. CALUTRON ION SOURCE

    DOEpatents

    Oppenheimer, F.

    1958-08-19

    The construction of an ion source is descrtbed wherein a uniform and elongated arc is established for employment in a calutron. The novel features of the . source include the positioning of a cathode at one end of an elongated extt slit of an arc chamber. and anode electrodes defintng the longitudinal margins of the exit opening. When the exit slit is orientated in a parallel relation to a magnetic field, the arc extends in the direction of the magnetic field along and between the anode electrodes, which are held at a positsve potential with respect to the cathode.

  17. Hydrogen and Cesium Monitor for H- Magnetron Sources

    SciTech Connect

    Tan, Cheng-Yang; Bollinger, Dan; Schupbach, Brian; Seiya, Kiyomi

    2014-07-01

    The relative concentration of cesium to hydrogen in the plasma of a H- magnetron source is an important parameter for reliable operations. If there is too much cesium, the surfaces of the source become contaminated with it and sparking occurs. If there is too little cesium then the plasma cannot be sustained. In order to monitor these two elements, a spectrometer has been built and installed on a test and operating source that looks at the plasma. It is hypothesized that the concentration of each element in the plasma is proportional to the intensity of their spectral lines.

  18. Industrial ion source technology

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.; Robinson, R. S.

    1978-01-01

    An analytical model was developed to describe the development of a coned surface texture with ion bombardment and simultaneous deposition of an impurity. A mathematical model of sputter deposition rate from a beveled target was developed in conjuction with the texturing models to provide an important input to that model. The establishment of a general procedure that will allow the treatment of manay different sputtering configurations is outlined. Calculation of cross sections for energetic binary collisions was extened to Ar, Kr.. and Xe with total cross sections for viscosity and diffusion calculated for the interaction energy range from leV to 1000eV. Physical sputtering and reactive ion etching experiments provided experimental data on the operating limits of a broad beam ion source using CF4 as a working gas to produce reactive species in a sputtering beam. Magnetic clustering effects are observed when Al is seeded with Fe and sputtered with Ar(?) ions. Silicon was textured at a micron scale by using a substrate temperature of 600 C.

  19. Off line ion source terminal

    NASA Astrophysics Data System (ADS)

    Jayamanna, K.

    2014-01-01

    The off-line ion source (OLIS) terminal provides beams from stable isotopes to ISAC (see Fig. 1) experiments as well as for accelerator commissioning and for pilot beams for radioactive beam experiments. The OLIS terminal (see Fig. 2) is equipped with a microwave driven cusp source for single and double charge ions, a surface ion source for low energy spread alkali beams, and a multi-charge ion source.

  20. Orbital motion of dust particles in an rf magnetron discharge. Ion drag force or neutral atom wind force

    SciTech Connect

    Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.; Dyatko, N. A.; Starostin, A. N.; Filippov, A. V.

    2012-03-15

    Microparticles with sizes up to 130 {mu}m have been confined and the velocity and diameter of particles in a plasma trap of an rf magnetron discharge with an arc magnetic field have been simultaneously measured. The motion of the gas induced by electron and ion cyclotron currents has been numerically simulated using the Navier-Stokes equation. The experimental and numerical results confirm the mechanism of the orbital motion of dust particles in the magnetron discharge plasma that is associated with the orbital motion of the neutral gas accelerated by electron and ion drift flows in crossed electric and magnetic fields.

  1. Charge exchange molecular ion source

    DOEpatents

    Vella, Michael C.

    2003-06-03

    Ions, particularly molecular ions with multiple dopant nucleons per ion, are produced by charge exchange. An ion source contains a minimum of two regions separated by a physical barrier and utilizes charge exchange to enhance production of a desired ion species. The essential elements are a plasma chamber for production of ions of a first species, a physical separator, and a charge transfer chamber where ions of the first species from the plasma chamber undergo charge exchange or transfer with the reactant atom or molecules to produce ions of a second species. Molecular ions may be produced which are useful for ion implantation.

  2. Compact ion accelerator source

    SciTech Connect

    Schenkel, Thomas; Persaud, Arun; Kapadia, Rehan; Javey, Ali

    2014-04-29

    An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.

  3. C/CrC nanocomposite coating deposited by magnetron sputtering at high ion irradiation conditions

    SciTech Connect

    Zhou, Z.; Rainforth, W. M.; Gass, M. H.; Bleloch, A.; Ehiassarian, A. P.; Hovsepian, P. Eh.

    2011-10-01

    CrC with the fcc NaCl (B1) structure is a metastable phase that can be obtained under the non-equilibrium conditions of high ion irradiation. A nano-composite coating consisting of amorphous carbon embedded in a CrC matrix was prepared via the unbalanced magnetron sputtering of graphite and Cr metal targets in Ar gas with a high ionized flux (ion-to-neutral ratio Ji/Jn = 6). The nanoscale amorphous carbon clusters self-assembled into layers alternated by CrC, giving the composite a multilayer structure. The phase, microstructure, and composition of the coating were characterized using x-ray diffraction, transmission electron microscopy, and aberration corrected scanning transmission electron microscopy coupled with electron energy loss spectroscopy. The interpretation of the true coating structure, in particular the carbide type, is discussed.

  4. Control of ions energy distribution in dual-frequency magnetron sputtering discharges

    SciTech Connect

    Ye, Chao He, Haijie; Huang, Fupei; Liu, Yi; Wang, Xiangying

    2014-04-15

    The ion energy distributions (IEDs) in the dual-frequency magnetron sputtering discharges were investigated by retarding field energy analyzer. Increasing power ratio of 2 MHz to 13.56 (27.12 or 60) MHz led to the evolution of IEDs from a uni-modal distribution towards a uni-modal distribution with high-energy peak shoulder and a bi-modal distribution. While increasing power ratio of 13.56 MHz to 27.12 MHz and 27.12 MHz to 60 MHz, led to the increase of peak energy. The evolution of IEDs shape and the increase of peak energy are due to the change of ions responding to the average field of high-frequency period towards the instantaneous sheath potential of low-frequency period.

  5. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    SciTech Connect

    Krylov, P. N. Zakirova, R. M.; Fedotova, I. V.

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  6. Performance of the BNL Mk-V steady state magnetron H source

    SciTech Connect

    Hershcovitch, A.; Prelec, K.; Alessi, J.

    1981-01-01

    The MkV magnetron source has been designed with the goal to achieve an H-or D-yield of 1-2 A in pulses longer than 5 a up to a steady state mode of operation. All electrodes are water cooled and this allows power densities up to 200 W/cm/sup 2/. The source has been operated in hydrogen and hydrogen-cesium modes. Various methods of cesium vapor injection have been tried and their reliability compared. The extractor grid in its first version has been made out of solid molybdenum, without cooling, and operated in a pulsed mode (pulse length more than 1 s).

  7. Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

    SciTech Connect

    Welzel, Thomas; Ellmer, Klaus

    2012-11-15

    Reactive d.c. magnetron sputtering in Ar/O{sub 2} gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O{sup -}, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O{sup -}, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O{sup -} formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

  8. Metal negative ion beam extraction from a radio frequency ion source

    SciTech Connect

    Kanda, S.; Yamada, N.; Kasuya, T.; Romero, C. F. P.; Wada, M.

    2015-04-08

    A metal ion source of magnetron magnetic field geometry has been designed and operated with a Cu hollow target. Radio frequency power at 13.56 MHz is directly supplied to the hollow target to maintain plasma discharge and induce self-bias to the target for sputtering. The extraction of positive and negative Cu ion beams have been tested. The ion beam current ratio of Cu{sup +} to Ar{sup +} has reached up to 140% when Ar was used as the discharge support gas. Cu{sup −} ion beam was observed at 50 W RF discharge power and at a higher Ar gas pressure in the ion source. Improvement of poor RF power matching and suppression of electron current is indispensable for a stable Cu{sup −} ion beam production from the source.

  9. A Cold Strontium Ion Source

    NASA Astrophysics Data System (ADS)

    Erickson, Christopher J.; Lyon, Mary; Blaser, Kelvin; Harper, Stuart; Durfee, Dallin

    2010-03-01

    We present a cold ion source for strontium 87. The source is based off of a standard Low-Velocity-Intense-Source (LVIS) for strontium using permanent magnets in place of anti-Helmholtz coils. Atoms from the LVIS are then ionized in a two photon process as they pass a 20kV anode plate. The result is a mono-energetic beam of ions whose velocity is tunable. Applications for the ions include spectroscopy and ion interferometry.

  10. Effect of ion bombarding energies on photocatalytic TiO{sub 2} films growing in a pulsed dual magnetron discharge

    SciTech Connect

    Novak, Ondrej; Vlcek, Jaroslav

    2011-05-15

    Photocatalytic crystalline TiO{sub 2} films were deposited by a pulsed dc dual magnetron system. The depositions were performed using two unbalanced magnetrons with planar titanium targets of 50 mm diameter in Ar+O{sub 2} gas mixtures at a total pressure of 0.9 Pa with oxygen partial pressures ranging from 0.2 to 0.9 Pa. The maximum substrate surface temperature was 160 deg. C Both magnetrons operated in the same asymmetric bipolar mode at the repetition frequencies of 100 and 350 kHz with a fixed 50% duty cycle and the average target power densities of 52-74 W cm{sup -2} in the negative voltage phase of the pulses, but the magnetron operations were shifted by a half of the period. Time-averaged energy-resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. The measured structure of the ion energy distributions was correlated with the distinct pulse phases of the magnetron discharges. A decrease in the energy delivered by fast ions (E{>=}10 eV) to the unit volume of the growing films, together with possible effects of plasma-chemical processes, during the depositions at the oxygen partial pressures of 0.5-0.75 Pa and the repetition frequency of 350 kHz resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO{sub 2} films.

  11. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  12. Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering

    SciTech Connect

    Rahamathunnisa, M.; Cameron, D. C.

    2009-03-15

    The ion fluxes and energies which impinge on the substrate during the deposition of chromium nitride by asymmetric bipolar pulsed dc reactive magnetron sputtering have been analyzed using energy resolved mass spectrometry. It has been found that there is a remarkable increase in ion flux at higher pulse frequencies and that the peak ion energy is directly related to the positive voltage overshoot of the target voltage. The magnitude of the metal flux depositing on the substrate is consistent with a 'dead time' of {approx}0.7 {mu}s at the start of the on period. The variation of the ion flux with pulse frequency has been explained by a simple model in which the ion density during the on period has a large peak which is slightly delayed from the large negative voltage overshoot which occurs at the start of the on pulse due to increased ionization at that time. This is consistent with the previously observed phenomena in pulsed sputtering.

  13. The spatial distribution of negative oxygen ion densities in a dc reactive magnetron discharge

    NASA Astrophysics Data System (ADS)

    Scribbins, Steven; Bowes, Michael; Bradley, James W.

    2013-01-01

    Using Langmuir probe-assisted eclipse laser photodetachment, the spatial distribution of O- densities in the bulk plasma of magnetron sputter tool has been determined for a range of pressures, 0.79 to 2.40 Pa. The discharge was operated in dc (200 W) with a Ti target and a fixed oxygen-argon pressure ratio of 0.2, in poisoned mode. Measurements show significant O- densities occupying an annulus downstream from the magnetic trap in regions of most positive plasma potential. With increasing pressure the region of high O- density expands and the peak densities increase reaching ˜1.5 × 1016 m-3 at 2.40 Pa, corresponding to an O- to electron density ratio (electronegativity α) of ˜2. Outside the area of dense negative ions, and in regions of the magnetic trap accessible to our probe we measure α < 0.2. The results show that these reactive magnetron plasmas, utilized for oxide film production, to be highly electronegative in regions close to the substrate.

  14. Review of Polarized Ion Sources

    NASA Astrophysics Data System (ADS)

    Zelenski, A.

    2016-02-01

    Recent progress in polarized ion sources development is reviewed. New techniques for production of polarized H‑ ion (proton), D‑ (D+) and 3He++ ion beams will be discussed. A novel polarization technique was successfully implemented for the upgrade of the RHIC polarized H‑ ion source to higher intensity and polarization. In this technique, a proton beam inside the high magnetic field solenoid is produced by ionization of the atomic hydrogen beam (from an external source) in the He-gas ionizer cell. Polarized electron capture from the optically-pumped Rb vapor further produces proton polarization (Optically Pumped Polarized Ion Source technique). The upgraded source reliably delivered beam for the 2013 polarized run in RHIC at S = 510 GeV. This was a major factor contributing to RHIC polarization increase to over 60 % for colliding beams. Feasibility studies of a new polarization technique for polarized 3He++ source based on BNL Electron Beam Ion Source is also discussed.

  15. Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Lewandowski, M.

    2016-02-01

    The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

  16. Emittance Characteristics of High-Brightness H- Ion Sources

    NASA Astrophysics Data System (ADS)

    Welton, R. F.; Stockli, M. P.; Keller, R.; Thomae, R. W.; Thomason, J.; Sherman, J.; Alessi, J.

    2002-11-01

    A survey of emittance characteristics from high-brightness, H- ion sources has been undertaken. Representative examples of each important type of H- source for accelerator application are investigated: A magnetron surface plasma source (BNL) a multi-cusp-surface-conversion source (LANL) a Penning source (RAL-ISIS) and a multi-cusp-volume source (LBNL). Presently, comparisons between published emittance values from different ion sources are difficult largely because of different definitions used in reported emittances and the use of different data reduction techniques in analyzing data. Although seldom discussed in the literature, rms-emittance values often depend strongly on the method employed to separate real beam from background. In this work, the problem of data reduction along with software developed for emittance analysis is discussed. Raw emittance data, obtained from the above laboratories, is analyzed using a single technique and normalized rms and 90% area-emittance values are determined along with characteristic emittance versus beam fraction curves.

  17. ORNL ECR multicharged ion source

    SciTech Connect

    Meyer, F.W.

    1984-01-01

    A multicharged ion source based on Electron Cyclotron Resonance (ECR) heating has been designed and built at ORNL. The ECR ion source, which is completely dedicated for atomic physics collision studies, produces higher charge states and higher beam intensities than the present ORNL PIG multicharged ion source, and will thus permit study of collision processes involving ions of higher charge states in experiments requiring higher beam intensities than could be previously obtained in our laboratory. The source has already produced up to fully stripped C and O beams, as well as up to He-like Ar beams. Measurements of the energy spread of ions extracted from the ion source operating in both single-stage and two-stage mode are described. In addition, initial results of total cross section measurements for fully stripped light ions incident on atomic hydrogen in the energy range 0.2 to 10 keV are presented. 13 references, 7 figures, 1 table.

  18. Thermal stability of magnetron and ion beam sputtered top and bottom spin-valve films

    SciTech Connect

    Mao, Ming; Cerjan, Charlie; Hung, Stephanie; Miloslavsky, Lena; Chien, Chester; Sant, Sudhi

    2001-06-01

    The thermal stability of top and bottom IrMn exchange-biased spin-valve films prepared by ion beam deposition (IBD) and magnetron sputtering physical vapor deposition (PVD) is compared. These films exhibit identical temperature dependence for the exchange bias field H{sub ex}, with a blocking temperature of T{sub B}=250{degree}C, that is independent of preparation technique. Isothermal annealing at temperatures below T{sub B} led to a ln(t) dependent degradation in H{sub ex}, suggesting a thermal activation process. The high crystallographic quality of the IBD films leads to a superior stability compared to PVD films. Top spin-valve films are also found to be more stable than bottom spin-valve films. {copyright} 2001 American Institute of Physics.

  19. Characterization of ion beam and magnetron sputtered thin Ta/NiFe films

    NASA Astrophysics Data System (ADS)

    Mao, M.; Leng, Q.; Huai, Y.; Johnson, P.; Miller, M.; Tong, H.-C.; Miloslavsky, L.; Qian, C.; Wang, J.; Hegde, H.

    1999-04-01

    Thin Ta/NiFe films were deposited using ion beam deposition (IBD), pulsed, and static magnetron sputtering techniques. These NiFe films show anisotropy field values ˜4 Oe, easy axis coercivities ⩽1 Oe, and hard axis coercivities ⩽0.3 Oe. IBD films exhibit higher magnetoresistance ratios (ΔR/R), while little difference is noted between different deposition techniques in the sheet resistance of NiFe films. A ΔR/R value of 1.8% has been measured for a 90 Å IBD NiFe films. X-ray diffraction measurements indicate that NiFe films of the same thickness have about the same grain size regardless of deposition technique, however, IBD films exhibit superior (111) texture and crystallinity. Our results clearly indicate that the superior magnetic properties of thin IBD Ta/NiFe films are a result of high crystallographic quality of these films.

  20. Thermal stability of magnetron and ion beam sputtered top and bottom spin-valve films

    NASA Astrophysics Data System (ADS)

    Mao, Ming; Cerjan, Charlie; Hung, Stephanie; Miloslavsky, Lena; Chien, Chester; Sant, Sudhi

    2001-06-01

    The thermal stability of top and bottom IrMn exchange-biased spin-valve films prepared by ion beam deposition (IBD) and magnetron sputtering physical vapor deposition (PVD) is compared. These films exhibit identical temperature dependence for the exchange bias field Hex, with a blocking temperature of TB=250 °C, that is independent of preparation technique. Isothermal annealing at temperatures below TB led to a ln(t) dependent degradation in Hex, suggesting a thermal activation process. The high crystallographic quality of the IBD films leads to a superior stability compared to PVD films. Top spin-valve films are also found to be more stable than bottom spin-valve films.

  1. A cookbook for building a high-current dimpled H magnetron source for accelerators

    SciTech Connect

    Bollinger, Daniel S.; Karns, Patrick R.; Tan, Cheng -Yang

    2015-10-30

    A high-current (>50 mA) dimpled H magnetron source has been built at Fermilab for supplying H beam to the entire accelerator complex. Despite many decades of expertise with slit H magnetron sources at Fermilab, we were faced with many challenges from the dimpled H magnetron source, which needed to be overcome in order to make it operational. Dimpled H sources for high-energy physics are not new: Brookhaven National Laboratory has operated a dimpled H- source for more than two decades. However, the transference of that experience to Fermilab took about two years because a cookbook for building this type of source did not exist and seemingly innocuous or undocumented choices had a huge impact on the success or failure for this type of source. Moreover, it is the goal of this paper to document the reasons for these choices and to present a cookbook for building and operating dimpled H magnetron sources.

  2. Ion sources for heavy ion fusion

    SciTech Connect

    Yu, S.S.; Eylon, S.; Chupp, W.

    1995-09-01

    The development of ion sources for heavy ion fusion will be reported with particular emphasis on a recently built 2 MV injector. The new injector is based on an electrostatic quadrupole configuration, and has produced pulsed K{sup +} ions of 950 mA peak from a 6.7 inch curved alumino silicate source. The ion beam has reached 2.3 MV with an energy flatness of {+-}0.2% over 1 {micro}s. The measured normalized edge emittance of less than 1 {pi} mm-mr is close to the source temperature limit. The design, construction, performance, and comparisons with three-dimensional particle-in-cell simulations will be described.

  3. ECR ion source

    SciTech Connect

    Billquist, P.J.; Harkewicz, R.; Pardo, R.C.

    1995-08-01

    The feasibility of using a 30-watt pulsed NdYAG laser to ablate or evaporate material directly into the ECR had some initial exploratory runs and produced two distinctly interesting results. This technique holds the possibility of using small quantities of material, with a high efficiency, and being applicable to all solids. The laser illuminates a sample through one of the radial ports in the ECR main plasma chamber. The off-line tests indicated that our surplus (free) laser is capable of ablating significant quantities of interesting materials. The first tests of the laser ablation idea were carried out using a bismuth sample. The inherent pulsed nature of the technique allowed us to immediately study the time evolution of charge states in the ECR plasma. The results are directly comparable to model calculations and are completely consistent with the sequential stepwise stripping process which was assumed to dominate the high charge state production process. A paper describing our results will be presented at the 1995 International Ion Source Conference.

  4. ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.; Baldwin, David A.

    2009-11-20

    The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.

  5. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    SciTech Connect

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-05-08

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O{sub 2}/H{sub 2}O environment. Ar{sup +} with an average kinetic energy of {approx}5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by {approx}70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H{sub 2} formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.

  6. Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

    NASA Astrophysics Data System (ADS)

    Ulrich, S.; Scherer, J.; Schwan, J.; Barzen, I.; Jung, K.; Scheib, M.; Ehrhardt, H.

    1996-02-01

    Cubic boron nitride (c-BN) thin films have been deposited by unbalanced rf (13.56 MHz) magnetron sputtering of a hexagonal boron nitride target in a pure argon discharge. Deposition parameters have been 300 W rf target power, 8×10-4 mbar argon pressure, 3.5 cm target substrate distance, and 800 K substrate temperature. Under these conditions the ion current density is 2.25 mA/cm2 and the growth rate is ˜1.1 Å/s. By applying a rf substrate bias the ion plating energy is varied from plasma potential of 37 eV up to 127 eV. The films have been characterized by infrared (IR) and Auger electron spectroscopy (AES), x-ray diffraction (XRD), x-ray reflectivity, elastic recoil detection (ERD), Rutherford backscattering (RBS), nuclear resonance analysis (NRA), and stress measurements. The subplantation model proposed by Lifshitz and Robertson can be applied to the c-BN formation. An energy of about 85±5 eV is found where the stress (25 GPa, 200 nm film thickness) and the c-BN content (≳90%) have a maximum. The grain size of the crystalline c-BN phase was estimated to be in the range of 5 nm. Below an energy of 67±5 eV no c-BN could be detected. An excellent adhesion has been obtained by a special interface treatment.

  7. Ion dynamics in a DC magnetron microdischarge measured with laser-induced fluorescence

    NASA Astrophysics Data System (ADS)

    Young, Christopher; Gascon, Nicolas; Lucca Fabris, Andrea; Ito, Tsuyohito; Cappelli, Mark

    2015-11-01

    We present evidence of coherent rotating azimuthal wave structures in a planar DC magnetron microdischarge operated with argon and xenon. The dominant stable mode structure varies with discharge voltage, and high frame rate camera imaging of plasma emission reveals propagating azimuthal waves in the negative E-> × B-> direction. This negative drift direction is attributed to a local field reversal arising from strong density gradients that drive excess ions towards the anode. Observed mode transitions are shown to be consistent with models of gradient drift-wave dispersion in such a field reversal when the fluid representation includes ambipolar diffusion parallel to the magnetic field direction. Time-averaged and time-resolved laser-induced fluorescence measurements interrogate xenon ion dynamics under the action of the field reversal. Time resolution is obtained by synchronizing with the coherent azimuthal wave frequency at fixed mode number. This work is sponsored by the U.S. Air Force Office of Scientific Research with Dr. Mitat Birkan as program manager. C.Y. acknowledges support from the DOE NNSA Stewardship Science Graduate Fellowship under Contract DE-FC52-08NA28752.

  8. Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operation

    SciTech Connect

    Lettry J.; Alessi J.; Faircloth, D.; Gerardin, A.; Kalvas, T.; Pereira, H.; Sgobba, S.

    2012-02-23

    Linac4 accelerator of Centre Europeen de Recherches Nucleaires is under construction and a RF-driven H{sup -} ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 95% and above. Investigating and understanding the underlying mechanisms involved with source failure or ageing is critical when selecting the ion source technology. Plasma discharge driven surface ion sources rely on molybdenum cathodes. Deformation of the cathode surfaces is visible after extended operation periods. A metallurgical investigation of an ISIS ion source is presented. The origin of the deformation is twofold: Molybdenum sputtering by cesium ions digs few tenths of mm cavities while a growth of molybdenum is observed in the immediate vicinity. The molybdenum growth under hydrogen atmosphere is hard and loosely bound to the bulk. It is, therefore, likely to peel off and be transported within the plasma volume. The observation of the cathode, anode, and extraction electrodes of the magnetron source operated at BNL for two years are presented. A beam simulation of H{sup -}, electrons, and Cs{sup -} ions was performed with the IBSimu code package to qualitatively explain the observations. This paper describes the operation conditions of the ion sources and discusses the metallurgical analysis and beam simulation results.

  9. Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operation

    SciTech Connect

    Lettry, J.; Gerardin, A.; Pereira, H.; Sgobba, S.; Alessi, J.; Faircloth, D.; Kalvas, T.

    2012-02-15

    Linac4 accelerator of Centre Europeen de Recherches Nucleaires is under construction and a RF-driven H{sup -} ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 95% and above. Investigating and understanding the underlying mechanisms involved with source failure or ageing is critical when selecting the ion source technology. Plasma discharge driven surface ion sources rely on molybdenum cathodes. Deformation of the cathode surfaces is visible after extended operation periods. A metallurgical investigation of an ISIS ion source is presented. The origin of the deformation is twofold: Molybdenum sputtering by cesium ions digs few tenths of mm cavities while a growth of molybdenum is observed in the immediate vicinity. The molybdenum growth under hydrogen atmosphere is hard and loosely bound to the bulk. It is, therefore, likely to peel off and be transported within the plasma volume. The observation of the cathode, anode, and extraction electrodes of the magnetron source operated at BNL for two years are presented. A beam simulation of H{sup -}, electrons, and Cs{sup -} ions was performed with the IBSimu code package to qualitatively explain the observations. This paper describes the operation conditions of the ion sources and discusses the metallurgical analysis and beam simulation results.

  10. Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operation.

    PubMed

    Lettry, J; Alessi, J; Faircloth, D; Gerardin, A; Kalvas, T; Pereira, H; Sgobba, S

    2012-02-01

    Linac4 accelerator of Centre Européen de Recherches Nucléaires is under construction and a RF-driven H(-) ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 95% and above. Investigating and understanding the underlying mechanisms involved with source failure or ageing is critical when selecting the ion source technology. Plasma discharge driven surface ion sources rely on molybdenum cathodes. Deformation of the cathode surfaces is visible after extended operation periods. A metallurgical investigation of an ISIS ion source is presented. The origin of the deformation is twofold: Molybdenum sputtering by cesium ions digs few tenths of mm cavities while a growth of molybdenum is observed in the immediate vicinity. The molybdenum growth under hydrogen atmosphere is hard and loosely bound to the bulk. It is, therefore, likely to peel off and be transported within the plasma volume. The observation of the cathode, anode, and extraction electrodes of the magnetron source operated at BNL for two years are presented. A beam simulation of H(-), electrons, and Cs(-) ions was performed with the IBSimu code package to qualitatively explain the observations. This paper describes the operation conditions of the ion sources and discusses the metallurgical analysis and beam simulation results. PMID:22380237

  11. Investigation of ISIS and Brookhaven National Laboratory ion source electrodes after extended operationa)

    NASA Astrophysics Data System (ADS)

    Lettry, J.; Alessi, J.; Faircloth, D.; Gerardin, A.; Kalvas, T.; Pereira, H.; Sgobba, S.

    2012-02-01

    Linac4 accelerator of Centre Européen de Recherches Nucléaires is under construction and a RF-driven H- ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 95% and above. Investigating and understanding the underlying mechanisms involved with source failure or ageing is critical when selecting the ion source technology. Plasma discharge driven surface ion sources rely on molybdenum cathodes. Deformation of the cathode surfaces is visible after extended operation periods. A metallurgical investigation of an ISIS ion source is presented. The origin of the deformation is twofold: Molybdenum sputtering by cesium ions digs few tenths of mm cavities while a growth of molybdenum is observed in the immediate vicinity. The molybdenum growth under hydrogen atmosphere is hard and loosely bound to the bulk. It is, therefore, likely to peel off and be transported within the plasma volume. The observation of the cathode, anode, and extraction electrodes of the magnetron source operated at BNL for two years are presented. A beam simulation of H-, electrons, and Cs- ions was performed with the IBSimu code package to qualitatively explain the observations. This paper describes the operation conditions of the ion sources and discusses the metallurgical analysis and beam simulation results.

  12. Negative ion source

    DOEpatents

    Leung, K.N.; Ehlers, K.W.

    1982-08-06

    An ionization vessel is divided into an ionizing zone and an extraction zone by a magnetic filter. The magnetic filter prevents high-energy electrons from crossing from the ionizing zone to the extraction zone. A small positive voltage impressed on a plasma grid, located adjacent an extraction grid, positively biases the plasma in the extraction zone to thereby prevent positive ions from migrating from the ionizing zone to the extraction zone. Low-energy electrons, which would ordinarily be dragged by the positive ions into the extraction zone, are thereby prevented from being present in the extraction zone and being extracted along with negative ions by the extraction grid. Additional electrons are suppressed from the output flux using ExB drift provided by permanent magnets and the extractor grid electrical field.

  13. Negative ion source

    DOEpatents

    Leung, K.N.; Ehlers, K.W.

    1984-12-04

    An ionization vessel is divided into an ionizing zone and an extraction zone by a magnetic filter. The magnetic filter prevents high-energy electrons from crossing from the ionizing zone to the extraction zone. A small positive voltage impressed on a plasma grid, located adjacent an extraction grid, positively biases the plasma in the extraction zone to thereby prevent positive ions from migrating from the ionizing zone to the extraction zone. Low-energy electrons, which would ordinarily be dragged by the positive ions into the extraction zone, are thereby prevented from being present in the extraction zone and being extracted along with negative ions by the extraction grid. Additional electrons are suppressed from the output flux using ExB drift provided by permanent magnets and the extractor grid electrical field. 14 figs.

  14. Negative ion source

    DOEpatents

    Leung, Ka-Ngo; Ehlers, Kenneth W.

    1984-01-01

    An ionization vessel is divided into an ionizing zone and an extraction zone by a magnetic filter. The magnetic filter prevents high-energy electrons from crossing from the ionizing zone to the extraction zone. A small positive voltage impressed on a plasma grid, located adjacent an extraction grid, positively biases the plasma in the extraction zone to thereby prevent positive ions from migrating from the ionizing zone to the extraction zone. Low-energy electrons, which would ordinarily be dragged by the positive ions into the extraction zone, are thereby prevented from being present in the extraction zone and being extracted along with negative ions by the extraction grid. Additional electrons are suppressed from the output flux using ExB drift provided by permanent magnets and the extractor grid electrical field.

  15. Properties of All-Solid Lithium-Ion Rechargeable Batteries Deposited by RF Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, R. J.; Ren, Y.; Geng, L. Q.; Chen, T.; Li, L. X.; Yuan, C. R.

    2013-08-01

    Amorphous V2O5, LiPON and Li2Mn2O4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge-discharge characteristic in the voltage range of 0.3-3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

  16. Compositionally graded SiCu thin film anode by magnetron sputtering for lithium ion battery

    SciTech Connect

    Polat, B. D.; Eryilmaz, O. L.; Keles, O; Erdemir, A; Amine, Khalil

    2015-10-22

    Compositionally graded and non-graded composite SiCu thin films were deposited by magnetron sputtering technique on Cu disks for investigation of their potentials in lithium ion battery applications. The compositionally graded thin film electrodes with 30 at.% Cu delivered a 1400 mAh g-1 capacity with 80% Coulombic efficiency in the first cycle and still retained its capacity at around 600 mAh g-1 (with 99.9% Coulombic efficiency) even after 100 cycles. On the other hand, the non-graded thin film electrodes with 30 at.% Cu exhibited 1100 mAh g-1 as the first discharge capacity with 78% Coulombic efficiency but the cycle life of this film degraded very quickly, delivering only 250 mAh g-1 capacity after 100th cycles. Not only the Cu content but also the graded film thickness were believed to be the main contributors to the much superior performance of the compositionally graded SiCu films. We also believe that the Cu-rich region of the graded film helped reduce internal stress build-up and thus prevented film delamination during cycling. In particular, the decrease of Cu content from interface region to the top of the coating reduced the possibility of stress build-up across the film during cycling, thus leading to a high electrochemical performance.

  17. ION SOURCE UNIT FOR CALUTRON

    DOEpatents

    Sloan, D.H.; Yockey, H.P.; Schmidt, F.H.

    1959-04-14

    An improvement in the mounting arrangement for an ion source within the vacuum tank of a calutron device is reported. The cathode and arc block of the source are independently supported from a stem passing through the tank wall. The arc block may be pivoted and moved longitudinally with respect to the stem to thereby align the arc chamber in the biock with the cathode and magnetic field in the tank. With this arrangement the elements of the ion source are capable of precise adjustment with respect to one another, promoting increased source efficiency.

  18. Cold Strontium Ion Source for Ion Interferometry

    NASA Astrophysics Data System (ADS)

    Jackson, Jarom; Durfee, Dallin

    2015-05-01

    We are working on a cold source of Sr Ions to be used in an ion interferometer. The beam will be generated from a magneto-optical trap (MOT) of Sr atoms by optically ionizing atoms leaking out a carefully prepared hole in the MOT. A single laser cooling on the resonant transition (461 nm) in Sr should be sufficient for trapping, as we've calculated that losses to the atom beam will outweigh losses to dark states. Another laser (405 nm), together with light from the trapping laser, will drive a two photon transition in the atom beam to an autoionizing state. Supported by NSF Award No. 1205736.

  19. The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films

    SciTech Connect

    Bikowski, Andre; Welzel, Thomas; Ellmer, Klaus

    2013-06-17

    In order to study the impact of negative oxygen ion bombardment on the electronic transport properties of ZnO:Al films, a systematic magnetron sputtering study from ceramic targets with excitation frequencies from DC to 27 MHz, accompanied by strongly varying discharge voltages, has been performed. Higher plasma excitation frequencies significantly improve the transport properties of ZnO:Al films. The effect of the bombardment of the films by energetic particles (negative oxygen ions) can be explained by the dynamic equilibrium between the formation of acceptor-like oxygen interstitials compensating the extrinsic donors and the self-annealing of the interstitial defects at higher deposition temperatures.

  20. Negative-ion source applications.

    PubMed

    Ishikawa, J

    2008-02-01

    In this paper heavy negative-ion sources which we developed and their applications for materials science are reviewed. Heavy negative ions can be effectively produced by the ejection of a sputtered atom through the optimally cesiated surface of target with a low work function. Then, enough continuous negative-ion currents for materials-science applications can be obtained. We developed several kinds of sputter-type heavy negative-ion sources such as neutral- and ionized-alkaline metal bombardment-type heavy negative-ion source and rf-plasma sputter type. In the case where a negative ion is irradiated on a material surface, surface charging seldom takes place because incoming negative charge of the negative ion is well balanced with outgoing negative charge of the released secondary electron. In the negative-ion implantation into an insulator or insulated conductive material, high precision implantation processing with charge-up free properties can be achieved. Negative-ion implantation technique, therefore, can be applied to the following novel material processing systems: the surface modification of micrometer-sized powders, the nanoparticle formation in an insulator for the quantum devices, and the nerve cell growth manipulation by precise control of the biocompatibility of polymer surface. When a negative ion with low kinetic energy approaches the solid surface, the kinetic energy causes the interatomic bonding (kinetic bonding), and formation of a metastable material is promoted. Carbon films with high constituent of sp(3) bonding, therefore, can be formed by carbon negative-ion beam deposition. PMID:18315249

  1. Optimal Position of Ion Source for High Performance of IEC

    SciTech Connect

    Osawa, Hodaka; Ishibashi, Takayuki; Ohnishi, Masami; Yoshikawa, Kiyoshi

    2005-05-15

    An inertial electrostatic confinement (IEC) fusion device is possibly used for portable neutron sources. R. L. Hirsh reported that D-D the neutrons of 1.8 x 10{sup 8} n/s were produced. Recently, the similar amounts of fusion reactions are observed to occur in IEC devices In the most of IEC devices, since gas pressure is so high that the ions lose their energy by the frequent collisions with the neutral gas. The conditions of the high voltage and the low pressure are preferable because the energy of beam ions is kept very high and used for the fusion reaction more efficiently. It, however, is difficult to produce enough amounts of ions through a glow discharge at the low pressure. One of the solutions is to equip the ion source such as a magnetron near the anode. We have made three-dimensional orbit following code to evaluate the life of the ions produced near the anode surface. The code includes atomic collisions with background neutral gas and indicates the optimal positions to equip ion source which gives longer life of accelerated ions.

  2. Solenoid and monocusp ion source

    SciTech Connect

    Brainard, J.P.; Burns, E.J.T.; Draper, C.H.

    1995-12-31

    An ion source which generates ions having high atomic purity incorporates a solenoidal magnetic field to increase the electron path length. In a sealed envelope, electrons emitted from a cathode traverse the magnetic field lines of a solenoid and a monocusp magnet between the cathode and a reflector at the monocusp. As electrons collide with gas, the molecular gas forms a plasma. An anode grazes the outer boundary of the plasma. Molecular ions and high energy electrons remain substantially on the cathode side of the cusp, but as the ions and electrons are scattered to the aperture side of the cusp, additional collisions create atomic ions. The increased electron path length allows for smaller diameters and lower operating pressures.

  3. Solenoid and monocusp ion source

    SciTech Connect

    Brainard, John Paul; Burns, Erskine John Thomas; Draper, Charles Hadley

    1997-01-01

    An ion source which generates hydrogen ions having high atomic purity incorporates a solenoidal permanent magnets to increase the electron path length. In a sealed envelope, electrons emitted from a cathode traverse the magnetic field lines of a solenoid and a monocusp magnet between the cathode and a reflector at the monocusp. As electrons collide with gas, the molecular gas forms a plasma. An anode grazes the outer boundary of the plasma. Molecular ions and high energy electrons remain substantially on the cathode side of the cusp, but as the ions and electrons are scattered to the aperture side of the cusp, additional collisions create atomic ions. The increased electron path length allows for smaller diameters and lower operating pressures.

  4. STATUS OF ITEP DECABORANE ION SOURCE PROGRAM.

    SciTech Connect

    KULEVOY,T.V.; PETRENKO, S.V.; KUIBEDA, R.P.; SELEZNEV, D.N.; KOZLOV, A.V.; STASEVICH, YU.B.; SITNIKOV, A.L.; SHAMAILOV, I.M.; PERSHIN, V.I.; HERSHCOVITCH, A.; JOHNSON, B.M.; GUSHENETS, V.I.; OKS, E.M.; POOLE, H.J.; MASUNOV, E.S.; POLOZOV, S.M.

    2007-08-26

    The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bemas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.

  5. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    SciTech Connect

    Wang, Haipeng; Plawski, Tomasz E.; Rimmer, Robert A.

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  6. Multi-source ion funnel

    DOEpatents

    Tang, Keqi; Belov, Mikhail B.; Tolmachev, Aleksey V.; Udseth, Harold R.; Smith, Richard D.

    2005-12-27

    A method for introducing ions generated in a region of relatively high pressure into a region of relatively low pressure by providing at least two electrospray ion sources, providing at least two capillary inlets configured to direct ions generated by the electrospray sources into and through each of the capillary inlets, providing at least two sets of primary elements having apertures, each set of elements having a receiving end and an emitting end, the primary sets of elements configured to receive a ions from the capillary inlets at the receiving ends, and providing a secondary set of elements having apertures having a receiving end and an emitting end, the secondary set of elements configured to receive said ions from the emitting end of the primary sets of elements and emit said ions from said emitting end of the secondary set of elements. The method may further include the step of providing at least one jet disturber positioned within at least one of the sets of primary elements, providing a voltage, such as a dc voltage, in the jet disturber, thereby adjusting the transmission of ions through at least one of the sets of primary elements.

  7. The DCU laser ion source.

    PubMed

    Yeates, P; Costello, J T; Kennedy, E T

    2010-04-01

    Laser ion sources are used to generate and deliver highly charged ions of various masses and energies. We present details on the design and basic parameters of the DCU laser ion source (LIS). The theoretical aspects of a high voltage (HV) linear LIS are presented and the main issues surrounding laser-plasma formation, ion extraction and modeling of beam transport in relation to the operation of a LIS are detailed. A range of laser power densities (I approximately 10(8)-10(11) W cm(-2)) and fluences (F=0.1-3.9 kJ cm(-2)) from a Q-switched ruby laser (full-width half-maximum pulse duration approximately 35 ns, lambda=694 nm) were used to generate a copper plasma. In "basic operating mode," laser generated plasma ions are electrostatically accelerated using a dc HV bias (5-18 kV). A traditional einzel electrostatic lens system is utilized to transport and collimate the extracted ion beam for detection via a Faraday cup. Peak currents of up to I approximately 600 microA for Cu(+) to Cu(3+) ions were recorded. The maximum collected charge reached 94 pC (Cu(2+)). Hydrodynamic simulations and ion probe diagnostics were used to study the plasma plume within the extraction gap. The system measured performance and electrodynamic simulations indicated that the use of a short field-free (L=48 mm) region results in rapid expansion of the injected ion beam in the drift tube. This severely limits the efficiency of the electrostatic lens system and consequently the sources performance. Simulations of ion beam dynamics in a "continuous einzel array" were performed and experimentally verified to counter the strong space-charge force present in the ion beam which results from plasma extraction close to the target surface. Ion beam acceleration and injection thus occur at "high pressure." In "enhanced operating mode," peak currents of 3.26 mA (Cu(2+)) were recorded. The collected currents of more highly charged ions (Cu(4+)-Cu(6+)) increased considerably in this mode of operation

  8. Broad beam gas ion source with hollow cathode discharge and four-grid accelerator system

    NASA Astrophysics Data System (ADS)

    Tang, Deli; Pu, Shihao; Huang, Qi; Tong, Honghui; Cui, Xirong; Chu, Paul K.

    2007-04-01

    A broad beam gas ion source based on low-pressure hollow cathode glow discharge is described. An axial magnetic filed produced by AlNiCo permanent magnets enhances the glow discharge in the ion source as a result of the magnetizing electrons between the hollow cathode and rod anode. The gas plasma is produced by magnetron hollow cathode glow discharge in the hollow cathode and a collimated broad ion beam is extracted by a four-grid accelerator system. A weak magnetic field of several millitesla is enough to ignite the magnetron glow discharge at pressure lower than 0.1 Pa, thereby enabling stable and continuous high-current discharge to form the homogeneous plasma. A four-grid accelerator, which separates the extraction and acceleration of the ion beam, is used in this design to generate the high-energy ion beam from 10 keV to 60 keV at a working pressure of 10-4 Torr. Although a higher gas pressure is necessary to maintain the low-pressure glow discharge when compared to hot filament discharge, the hollow cathode ion source is operational with reactive gases such as oxygen in the high-voltage continuous mode. A laterally uniform ion beam can be achieved by using the four-grid accelerator system. The effects of the rod anode length on the characteristics of the plasma discharge as well as ion beam extraction from the ion source are discussed.

  9. ION SOURCE FOR A CALUTRON

    DOEpatents

    Backus, J.G.

    1957-12-24

    This patent relates to ion sources and more particularly describes an ion source for a calutron which has the advantage of efficient production of an ion beam and long operation time without recharging. The source comprises an arc block provided with an arc chamber connected to a plurality of series-connected charge chambers and means for heating the charge within the chambers. A cathode is disposed at one end of the arc chamber and enclosed hy a vapor tight housing to protect the cathode. The arc discharge is set up between the cathode and the block due to a difference in potentials placed on these parts, and a magnetic field is aligned with the arc discharge. Cooling of the arc block is accomplished by passing coolant through a hollow stem secured at one end to the block and rotatably mounted at the other end through the wall of the calutron. The ions are removed through a slit in the arc chamber by accelerating electrodes.

  10. Relating to monitoring ion sources

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan

    2002-01-01

    The apparatus and method provide techniques for monitoring the position on alpha contamination in or on items or locations. The technique is particularly applicable to pipes, conduits and other locations to which access is difficult. The technique uses indirect monitoring of alpha emissions by detecting ions generated by the alpha emissions. The medium containing the ions is moved in a controlled manner frog in proximity with the item or location to the detecting unit and the signals achieved over time are used to generate alpha source position information.

  11. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  12. Design of a new electron cyclotron resonance ion source at Oshima National College of Maritime Technology

    SciTech Connect

    Asaji, T. Hirabara, N.; Izumihara, T.; Nakamizu, T.; Ohba, T.; Nakamura, T.; Furuse, M.; Hitobo, T.; Kato, Y.

    2014-02-15

    A new electron cyclotron resonance ion/plasma source has been designed and will be built at Oshima National College of Maritime Technology by early 2014. We have developed an ion source that allows the control of the plasma parameters over a wide range of electron temperatures for material research. A minimum-B magnetic field composed of axial mirror fields and radial cusp fields was designed using mainly Nd-Fe-B permanent magnets. The axial magnetic field can be varied by three solenoid coils. The apparatus has 2.45 GHz magnetron and 2.5–6.0 GHz solid-state microwave sources.

  13. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    NASA Astrophysics Data System (ADS)

    Malau, Viktor; Ilman, Mochammad Noer; Iswanto, Priyo Tri; Jatisukamto, Gaguk

    2016-03-01

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10-2 torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10-6 mbar, a fluence of 2 x 1017 ions/cm2, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  14. Ion optics of RHIC electron beam ion source

    SciTech Connect

    Pikin, A.; Alessi, J.; Beebe, E.; Kponou, A.; Okamura, M.; Raparia, D.; Ritter, J.; Tan, Y.; Kuznetsov, G.

    2012-02-15

    RHIC electron beam ion source has been commissioned to operate as a versatile ion source on RHIC injection facility supplying ion species from He to Au for Booster. Except for light gaseous elements RHIC EBIS employs ion injection from several external primary ion sources. With electrostatic optics fast switching from one ion species to another can be done on a pulse to pulse mode. The design of an ion optical structure and the results of simulations for different ion species are presented. In the choice of optical elements special attention was paid to spherical aberrations for high-current space charge dominated ion beams. The combination of a gridded lens and a magnet lens in LEBT provides flexibility of optical control for a wide range of ion species to satisfy acceptance parameters of RFQ. The results of ion transmission measurements are presented.

  15. Liquid metal ion source and alloy

    DOEpatents

    Clark, Jr., William M.; Utlaut, Mark W.; Behrens, Robert G.; Szklarz, Eugene G.; Storms, Edmund K.; Santandrea, Robert P.; Swanson, Lynwood W.

    1988-10-04

    A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy the arsenic is combined with palladium, preferably in a liquid alloy having a range of compositions from about 24 to about 33 atomic percent arsenic. Such an alloy may be readily prepared by a combustion synthesis technique. Liquid metal ion sources thus prepared produce arsenic ions for implantation, have long lifetimes, and are highly stable in operation.

  16. Hydrogen hollow cathode ion source

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J., Jr.; Sovey, J. S.; Roman, R. F. (Inventor)

    1980-01-01

    A source of hydrogen ions is disclosed and includes a chamber having at one end a cathode which provides electrons and through which hydrogen gas flows into the chamber. Screen and accelerator grids are provided at the other end of the chamber. A baffle plate is disposed between the cathode and the grids and a cylindrical baffle is disposed coaxially with the cathode at the one end of the chamber. The cylindrical baffle is of greater diameter than the baffle plate to provide discharge impedance and also to protect the cathode from ion flux. An anode electrode draws the electrons away from the cathode. The hollow cathode includes a tubular insert of tungsten impregnated with a low work function material to provide ample electrons. A heater is provided around the hollow cathode to initiate electron emission from the low work function material.

  17. Liquid metal ion source assembly for external ion injection into an electron string ion source (ESIS)

    NASA Astrophysics Data System (ADS)

    Segal, M. J.; Bark, R. A.; Thomae, R.; Donets, E. E.; Donets, E. D.; Boytsov, A.; Ponkin, D.; Ramsdorf, A.

    2016-02-01

    An assembly for a commercial Ga+ liquid metal ion source in combination with an ion transportation and focusing system, a pulse high-voltage quadrupole deflector, and a beam diagnostics system has been constructed in the framework of the iThemba LABS (Cape Town, South Africa)—JINR (Dubna, Russia) collaboration. First, results on Ga+ ion beam commissioning will be presented. Outlook of further experiments for measurements of charge breeding efficiency in the electron string ion source with the use of external injection of Ga+ and Au+ ion beams will be reported as well.

  18. Laser ion source for isobaric heavy ion collider experiment

    NASA Astrophysics Data System (ADS)

    Kanesue, T.; Kumaki, M.; Ikeda, S.; Okamura, M.

    2016-02-01

    Heavy-ion collider experiment in isobaric system is under investigation at Relativistic Heavy Ion Collider. For this experiment, ion source is required to maximize the abundance of the intended isotope. The candidate of the experiment is 96Ru + 96Zr. Since the natural abundance of particular isotope is low and composition of isotope from ion source depends on the composites of the target, an isotope enriched material may be needed as a target. We studied the performance of the laser ion source required for the experiment for Zr ions.

  19. Laser ion source for isobaric heavy ion collider experiment.

    PubMed

    Kanesue, T; Kumaki, M; Ikeda, S; Okamura, M

    2016-02-01

    Heavy-ion collider experiment in isobaric system is under investigation at Relativistic Heavy Ion Collider. For this experiment, ion source is required to maximize the abundance of the intended isotope. The candidate of the experiment is (96)Ru + (96)Zr. Since the natural abundance of particular isotope is low and composition of isotope from ion source depends on the composites of the target, an isotope enriched material may be needed as a target. We studied the performance of the laser ion source required for the experiment for Zr ions. PMID:26931981

  20. Development of Electron Cyclotron Resonance Ion Source for Synthesis of Endohedral Metallofullerenes

    SciTech Connect

    Tanaka, K.; Muramatsu, M.; Uchida, T.; Hanajiri, T.; Yoshida, Y.; Biri, S.; Kitagawa, A.; Kato, Y.

    2008-11-03

    A new electron cyclotron resonance ion source (ECRIS) has been constructed for synthesis of endohedral metallofullerenes. The main purpose of the ion source is to produce new biological and medical materials. The design is based on ECRIS for production of multicharged ion beams with a traditional minimum-B magnetic field. An 8-10 GHz traveling wave tube (TWT) amplifier and a 2.45 GHz magnetron have been applied as microwave sources. Fullerene and metal vapor are introduced with a filament heating micro-oven and an induction heating oven, respectively. In preliminary ion-extraction test, Ar{sup +} is 54 {mu}A. Many broken fullerenes such as C{sub 58} and C{sub 56} are observed in fullerene ion beams.

  1. High current vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Qi, N.; Schein, J.; Gensler, S.; Prasad, R.R.; Krishnan, M.; Brown, I.

    1999-07-01

    Heavy Ion fusion (HIF) is one of the approaches for the controlled thermonuclear power production. A source of heavy ions with charge states 1+ to 2+, in {approximately}0.5 A current beams with {approximately}20 {micro}s pulse widths and {approximately}10 Hz repetition rates are required. Thermionic sources have been the workhorse for the HIF program to date, but suffer from sloe turn-on, heating problems for large areas, are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states, in short and long pulse bursts, with low emittance and high beam currents. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications is investigated. An existing ion source at LBNL was modified to produce {approximately}0.5 A, {approximately}60 keV Gd (A{approximately}158) ion beams. The experimental effort concentrated on beam noise reduction, pulse-to-pulse reproducibility and achieving low beam emittance at 0.5 A ion current level. Details of the source development will be reported.

  2. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  3. Novel plasma immersion ion implantation and deposition hardware and technique based on high power pulsed magnetron discharge

    SciTech Connect

    Wu Zhongzhen; Tian Xiubo; Shi Jingwei; Wang Zeming; Gong Chunzhi; Yang Shiqin; Chu, Paul K.

    2011-03-15

    A novel plasma immersion ion implantation technique based on high power pulsed magnetron sputtering (HPPMS) discharge that can produce a high density metal plasma is described. The metal plasma is clean and does not suffer from contamination from macroparticles, and the process can be readily scaled up for industrial production. The hardware, working principle, and operation modes are described. A matching circuit is developed to modulate the high-voltage and HPPMS pulses to enable operation under different modes such as simultaneous implantation and deposition, pure implantation, and selective implantation. To demonstrate the efficacy of the system and technique, CrN films with a smooth and dense surface without macroparticles were produced. An excellent adhesion with a critical load of 59.9 N is achieved for the pure implantation mode.

  4. A 30-cm diameter argon ion source

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1976-01-01

    A 30 cm diameter argon ion source was evaluated. Ion source beam currents up to 4a were extracted with ion energies ranging from 0.2 to 1.5 KeV. An ion optics scaling relation was developed for predicting ion beam extraction capability as a function of total extraction voltage, gas type, and screen grid open area. Ignition and emission characteristics of several hollow cathode geometries were assessed for purposes of defining discharge chamber and neutralizer cathodes. Also presented are ion beam profile characteristics which exhibit broad beam capability well suited for ion beam sputtering applications.

  5. Resonant Ionization Laser Ion Source for Radioactive Ion Beams

    SciTech Connect

    Liu, Yuan; Beene, James R; Havener, Charles C; Vane, C Randy; Gottwald, T.; Wendt, K.; Mattolat, C.; Lassen, J.

    2009-01-01

    A resonant ionization laser ion source based on all-solid-state, tunable Ti:Sapphire lasers is being developed for the production of pure radioactive ion beams. It consists of a hot-cavity ion source and three pulsed Ti:Sapphire lasers operating at a 10 kHz pulse repetition rate. Spectroscopic studies are being conducted to develop ionization schemes that lead to ionizing an excited atom through an auto-ionization or a Rydberg state for numerous elements of interest. Three-photon resonant ionization of 12 elements has been recently demonstrated. The overall efficiency of the laser ion source measured for some of these elements ranges from 1 to 40%. The results indicate that Ti:Sapphire lasers could be well suited for laser ion source applications. The time structures of the ions produced by the pulsed lasers are investigated. The information may help to improve the laser ion source performance.

  6. Compact RF ion source for industrial electrostatic ion accelerator.

    PubMed

    Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

    2016-02-01

    Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described. PMID:26932115

  7. Compact RF ion source for industrial electrostatic ion accelerator

    NASA Astrophysics Data System (ADS)

    Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

    2016-02-01

    Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described.

  8. Inductively generated streaming plasma ion source

    DOEpatents

    Glidden, Steven C.; Sanders, Howard D.; Greenly, John B.

    2006-07-25

    A novel pulsed, neutralized ion beam source is provided. The source uses pulsed inductive breakdown of neutral gas, and magnetic acceleration and control of the resulting plasma, to form a beam. The beam supplies ions for applications requiring excellent control of ion species, low remittance, high current density, and spatial uniformity.

  9. Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

    SciTech Connect

    Kuschel, Thomas; Keudell, Achim von

    2010-05-15

    Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with this microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.

  10. High Current Ion Sources and Injectors for Heavy Ion Fusion

    SciTech Connect

    Kwan, Joe W.

    2005-02-15

    Heavy ion beam driven inertial fusion requires short ion beam pulses with high current and high brightness. Depending on the beam current and the number of beams in the driver system, the injector can use a large diameter surface ionization source or merge an array of small beamlets from a plasma source. In this paper, we review the scaling laws that govern the injector design and the various ion source options including the contact ionizer, the aluminosilicate source, the multicusp plasma source, and the MEVVA source.

  11. Physics of Plasma-Based Ion Implantation&Deposition (PBIID)and High Power Impulse Magnetron Sputtering (HIPIMS): A Comparison

    SciTech Connect

    Anders, Andre

    2007-08-28

    The emerging technology of High Power Impulse MagnetronSputtering (HIPIMS) has much in common with the more establishedtechnology of Plasma Based Ion Implantation&Deposition (PBIID):both use pulsed plasmas, the pulsed sheath periodically evolves andcollapses, the plasma-sheath system interacts with the pulse-drivingpower supply, the plasma parameters are affected by the power dissipated,surface atoms are sputtered and secondary electrons are emitted, etc.Therefore, both fields of science and technology could learn from eachother, which has not been fully explored. On the other hand, there aresignificant differences, too. Most importantly, the operation of HIPIMSheavilyrelies on the presence of a strong magnetic field, confiningelectrons and causing their ExB drift, which is closed for typicalmagnetron configurations. Second, at the high peak power levels used forHIPIMS, 1 kW/cm2 or greater averaged over the target area, the sputteredmaterial greatly affects plasma generation. For PBIID, in contrast,plasma generation and ion processing of the surface (ion implantation,etching, and deposition) are considered rela-tively independentprocesses. Third, secondary electron emission is generally considered anuisance for PBIID, especially at high voltages, whereas it is a criticalingredient to the operation of HIPIMS. Fourth, the voltages in PBIID areoften higher than in HIPIMS. For the first three reasons listed above,modelling of PBIID seems to be easier and could give some guidance forfuture HIPIMS models, which, clearly, will be more involved.

  12. Ion source with corner cathode

    NASA Technical Reports Server (NTRS)

    Herrero, Federico A. (Inventor); Roman, Patrick A. (Inventor)

    2012-01-01

    An ion source may include first, second, and third electrodes. The first electrode may be a repeller having a V-shaped groove. The second electrode may be an electron emitter filament disposed adjacent the base of the V-shaped groove. The third electrode may be an anode that defines an enclosed volume with an aperture formed therein adjacent the electron emitter filament. A potential of the first electrode may be less than a potential of the second electrode, and the potential of the second electrode may be less than a potential of the third electrode. A fourth electrode that is disposed between the electron emitter filament and the anode may be used to produce a more collimated electron beam.

  13. Laser ion source with solenoid field

    SciTech Connect

    Kanesue, Takeshi Okamura, Masahiro; Fuwa, Yasuhiro; Kondo, Kotaro

    2014-11-10

    Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. The laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 10{sup 11}, which was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.

  14. Laser ion source with solenoid field

    SciTech Connect

    Kanesue, Takeshi; Fuwa, Yasuhiro; Kondo, Kotaro; Okamura, Masahiro

    2014-11-12

    Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. In this study, the laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 1011, which was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.

  15. Laser ion source with solenoid field

    DOE PAGESBeta

    Kanesue, Takeshi; Fuwa, Yasuhiro; Kondo, Kotaro; Okamura, Masahiro

    2014-11-12

    Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. In this study, the laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 1011, whichmore » was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.« less

  16. Laser ion source with solenoid field

    NASA Astrophysics Data System (ADS)

    Kanesue, Takeshi; Fuwa, Yasuhiro; Kondo, Kotaro; Okamura, Masahiro

    2014-11-01

    Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. The laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 1011, which was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.

  17. The Electron Beam Ion Source (EBIS)

    ScienceCinema

    Brookhaven Lab

    2010-01-08

    Brookhaven National Lab has successfully developed a new pre-injector system, called the Electron Beam Ion Source, for the Relativistic Heavy Ion Collider (RHIC) and NASA Space Radiation Laboratory science programs. The first of several planned improvemen

  18. The Electron Beam Ion Source (EBIS)

    SciTech Connect

    Brookhaven Lab

    2009-06-09

    Brookhaven National Lab has successfully developed a new pre-injector system, called the Electron Beam Ion Source, for the Relativistic Heavy Ion Collider (RHIC) and NASA Space Radiation Laboratory science programs. The first of several planned improvemen

  19. Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

    SciTech Connect

    Schmidt, S.; Greczynski, G.; Jensen, J.; Hultman, L.; Czigany, Zs.

    2012-07-01

    Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies. Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

  20. High-charge-state ion sources

    SciTech Connect

    Clark, D.J.

    1983-06-01

    Sources of high charge state positive ions have uses in a variety of research fields. For heavy ion particle accelerators higher charge state particles give greater acceleration per gap and greater bending strength in a magnet. Thus higher energies can be obtained from circular accelerators of a given size, and linear accelerators can be designed with higher energy gain per length using higher charge state ions. In atomic physics the many atomic transitions in highly charged ions supplies a wealth of spectroscopy data. High charge state ion beams are also used for charge exchange and crossed beam experiments. High charge state ion sources are reviewed. (WHK)

  1. Upgraded vacuum arc ion source for metal ion implantation

    SciTech Connect

    Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.; Brown, I. G.

    2012-02-15

    Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed ''Mevva,'' for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

  2. Production of highly charged ion beams from ECR ion sources

    SciTech Connect

    Xie, Z.Q.

    1997-09-01

    Electron Cyclotron Resonance (ECR) ion source development has progressed with multiple-frequency plasma heating, higher mirror magnetic fields and better technique to provide extra cold electrons. Such techniques greatly enhance the production of highly charged ions from ECR ion sources. So far at cw mode operation, up to 300 e{mu}A of O{sup 7+} and 1.15 emA of O{sup 6+}, more than 100 e{mu}A of intermediate heavy ions for charge states up to Ar{sup 13+}, Ca{sup 13+}, Fe{sup 13+}, Co{sup 14+} and Kr{sup 18+}, and tens of e{mu}A of heavy ions with charge states to Kr{sup 26+}, Xe{sup 28+}, Au{sup 35+}, Bi{sup 34+} and U{sup 34+} have been produced from ECR ion sources. At an intensity of at least 1 e{mu}A, the maximum charge state available for the heavy ions are Xe{sup 36+}, Au{sup 46+}, Bi{sup 47+} and U{sup 48+}. An order of magnitude enhancement for fully stripped argon ions (I {ge} 60 enA) also has been achieved. This article will review the ECR ion source progress and discuss key requirement for ECR ion sources to produce the highly charged ion beams.

  3. Vacuum arc ion source for heavy ion fusion

    SciTech Connect

    Liu, F.; Qi, N.; Gensler, S.; Prasad, R.R.; Krishnan, M.; Brown, I.G.

    1998-02-01

    Heavy ion fusion is one approach to the problem of controlled thermonuclear power production, in which a small DT target is bombarded by an intense flux of heavy ions and compressed to fusion temperatures. There is a need in present HIF research and development for a reliable ion source for the production of heavy ion beams with low emittance, low beam noise, ion charge states Q=1+ to 3+, beam current {approximately}0.5A, pulse width {approximately}5{endash}20 {mu}s, and repetition rate {approximately}10 pulses per second. We have explored the suitability of a vacuum arc ion source for this application. Energetic, high current, gadolinium ion beams were produced with parameters as required or close to those required. The performance parameters can all be improved yet further in an optimized ion source design. Here we describe the ion source configuration used, the experiments conducted, and the results obtained. We conclude that a vacuum arc based metal ion source of this kind could be an excellent candidate for heavy ion fusion research application. {copyright} {ital 1998 American Institute of Physics.}

  4. Laser ion source for low charge heavy ion beams

    SciTech Connect

    Okamura,M.; Pikin, A.; Zajic, V.; Kanesue, T.; Tamura, J.

    2008-08-03

    For heavy ion inertial fusion application, a combination of a laser ion source and direct plasma injection scheme into an RFQ is proposed. The combination might provide more than 100 mA of singly charged heavy ion beam from a single laser shot. A planned feasibility test with moderate current is also discussed.

  5. A hollow cathode hydrogen ion source

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.; Mirtich, M. J.

    1977-01-01

    High current density ion sources have been used to heat plasmas in controlled thermonuclear reaction experiments. High beam currents imply relatively high emission currents from cathodes which have generally taken the form of tungsten filaments. A hydrogen ion source is described which was primarily developed to assess the emission current capability and design requirements for hollow cathodes for application in neutral injection devices. The hydrogen source produced ions by electron bombardment via a single hollow cathode. Source design followed mercury ion thruster technology, using a weak magnetic field to enhance ionization efficiency.

  6. Electron beam ion source and electron beam ion trap (invited)

    SciTech Connect

    Becker, Reinard; Kester, Oliver

    2010-02-15

    The electron beam ion source (EBIS) and its trap variant [electron beam ion trap (EBIT)] celebrated their 40th and 20th anniversary, respectively, at the EBIS/T Symposium 2007 in Heidelberg. These technologically challenging sources of highly charged ions have seen a broad development in many countries over the last decades. In contrast to most other ion sources the recipe of improvement was not ''sorcery'' but a clear understanding of the physical laws and obeying the technological constraints. This review will report important achievements of the past as well as promising developments in the future.

  7. Molecular ion sources for low energy semiconductor ion implantation (invited)

    NASA Astrophysics Data System (ADS)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  8. Molecular ion sources for low energy semiconductor ion implantation (invited).

    PubMed

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described. PMID:26932065

  9. Ionization phenomena and sources of negative ions

    SciTech Connect

    Alton, G.D.

    1983-01-01

    Negative ion source technology has rapidly advanced during the past several years as a direct consequence of the discovery of Krohn that negative ion yields can be greatly enhanced by sputtering in the presence of Group IA elements. Today, most negative ion sources use this discovery directly or the principles implied to effect negative ion formation through surface ionization. As a consequence, the more traditional direct extraction plasma and charge exchange sources are being used less frequently. However, the charge exchange generation mechanism appears to be as universal, is very competitive in terms of efficiency and has the advantage in terms of metastable ion formation. In this review, an attempt has been made to briefly describe the principal processes involved in negative ion formation and sources which are representative of a particular principle. The reader is referred to the literature for specific details concerning the operational characteristics, emittances, brightnesses, species and intensity capabilities of particular sources. 100 references.

  10. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  11. First results of the 2.45 GHz Oshima electron cyclotron resonance ion source.

    PubMed

    Asaji, T; Nakamura, T; Furuse, M; Hitobo, T; Uchida, T; Muramatsu, M; Kato, Y

    2016-02-01

    A new electron cyclotron resonance ion source has been constructed at Oshima College with a 2.45 GHz magnetron microwave source and permanent magnets employed as the main components. In addition, a solid-state power amplifier with a frequency range of 2.5-6.0 GHz was installed to study two-frequency plasma heating. Three solenoid coils were set up for adjusting the axial magnetic fields. Argon plasma generation and ion beam production have been conducted during the first year of operation. Ion current densities in the ECR plasma were measured using a biased disk. For 2.45 and 4.65 GHz two-frequency plasma heating, the ion density was approximately 1.5 times higher than that of 2.45 GHz single-frequency heating. PMID:26931948

  12. First results of the 2.45 GHz Oshima electron cyclotron resonance ion source

    NASA Astrophysics Data System (ADS)

    Asaji, T.; Nakamura, T.; Furuse, M.; Hitobo, T.; Uchida, T.; Muramatsu, M.; Kato, Y.

    2016-02-01

    A new electron cyclotron resonance ion source has been constructed at Oshima College with a 2.45 GHz magnetron microwave source and permanent magnets employed as the main components. In addition, a solid-state power amplifier with a frequency range of 2.5-6.0 GHz was installed to study two-frequency plasma heating. Three solenoid coils were set up for adjusting the axial magnetic fields. Argon plasma generation and ion beam production have been conducted during the first year of operation. Ion current densities in the ECR plasma were measured using a biased disk. For 2.45 and 4.65 GHz two-frequency plasma heating, the ion density was approximately 1.5 times higher than that of 2.45 GHz single-frequency heating.

  13. Secondary emission magnetron injection gun as high current durable electron source

    SciTech Connect

    Cherenshchikov, S.A.; Opanassenko, A.N.; Dovbnya, A.N.; Zakutin, V.V.

    1995-07-05

    Peculiarities of operation of secondary electron emission cathodes and different types of their excitation are discussed. On the base of available experimental data possibilities are analyzed for obtaining maximum achievable beam currents and densities. It is shown that the cross-field geometry is best-suited for achieving the highest current densities and peak beam currents. Experimental observables as regards beam characteristics of the secondary-emission magnetron gun (SEMIG) are presented. Prospects for obtaining beam current densities in excess of 100 A/cm{sup 2} at beam current above 100 A are discussed for cathode life times 20 to 100 thousand hours. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  14. Carbon nitride films formed using sputtering and negative carbon ion sources

    SciTech Connect

    Murzin, I.H.; Tompa, G.S.; Wei, J.; Muratov, V.; Fischer, T.E.; Yakovlev, V.

    1997-12-01

    The authors report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, they compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach they used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 {micro}A/cm{sup 2} current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. They were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1:0.47. These films possess wear rates lower than 5 {times} 10{sup {minus}7} mm{sup 3}/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C{triple_bond}N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.

  15. An overview of the new test stand for H⁻ ion sources at FNAL.

    PubMed

    Sosa, A; Bollinger, D S; Duel, K; Karns, P R; Pellico, W; Tan, C Y

    2016-02-01

    A new test stand at Fermi National Accelerator Laboratory (FNAL) is being constructed to carry out experiments to develop and upgrade the present magnetron-type sources of H(-) ions of up to 80 mA at 35 keV in the context of the Proton Improvement Plan. The aim of this plan is to provide high-power proton beams for the experiments at FNAL. The technical details of the construction and layout of this test stand are presented, along with a prospective set of diagnostics to monitor the sources. PMID:26931987

  16. Molecular phosphorus ion source for semiconductor technology

    SciTech Connect

    Gushenets V. I.; Hershcovitch A.; Bugaev, A.S.; Oks, E.M.; Kulevoy, T.V.

    2012-02-15

    This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800 C. Thus, one of the main conditions for producing maximum P{sub 4}{sup +} fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800 C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P{sub 4}{sup +} ion beam current greater than 30% of the total beam current.

  17. Sample inlet tube for ion source

    DOEpatents

    Prior, David [Hermiston, OR; Price, John [Richland, WA; Bruce, Jim [Oceanside, CA

    2002-09-24

    An improved inlet tube is positioned within an aperture through the device to allow the passage of ions from the ion source, through the improved inlet tube, and into the interior of the device. The inlet tube is designed with a larger end and a smaller end wherein the larger end has a larger interior diameter than the interior diameter of the smaller end. The inlet tube is positioned within the aperture such that the larger end is pointed towards the ion source, to receive ions therefrom, and the smaller end is directed towards the interior of the device, to deliver the ions thereto. Preferably, the ion source utilized in the operation of the present invention is a standard electrospray ionization source. Similarly, the present invention finds particular utility in conjunction with analytical devices such as mass spectrometers.

  18. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    SciTech Connect

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  19. Beam current controller for laser ion source

    SciTech Connect

    Okamura, Masahiro

    2014-10-28

    The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.

  20. Recent advances in vacuum arc ion sources

    SciTech Connect

    Brown, I.G.; Anders, A.; Anders, S.; Dickinson, M.R.; MacGill, R.A.; Oks, E.M.

    1995-07-01

    Intense beams of metal ions can be formed from a vacuum arc ion source. Broadbeam extraction is convenient, and the time-averaged ion beam current delivered downstream can readily be in the tens of milliamperes range. The vacuum arc ion source has for these reasons found good application for metallurgical surface modification--it provides relatively simple and inexpensive access to high dose metal ion implantation. Several important source developments have been demonstrated recently, including very broad beam operation, macroparticle removal, charge state enhancement, and formation of gaseous beams. The authors have made a very broad beam source embodiment with beam formation electrodes 50 cm in diameter, producing a beam of width {approximately}35 cm for a nominal beam area of {approximately}1,000 cm{sup 2}, and a pulsed Ti beam current of about 7 A was formed at a mean ion energy of {approximately}100 keV. Separately, they`ve developed high efficiency macroparticle-removing magnetic filters and incorporated such a filter into a vacuum arc ion source so as to form macroparticle-free ion beams. Jointly with researchers at the High Current Electronics Institute at Tomsk, Russia, and the Gesellschaft fuer Schwerionenforschung at Darmstadt, Germany, they`ve developed a compact technique for increasing the charge states of ions produced in the vacuum arc plasma and thus providing a simple means of increasing the ion energy at fixed extractor voltage. Finally, operation with mixed metal and gaseous ion species has been demonstrated. Here, they briefly review the operation of vacuum marc ion sources and the typical beam and implantation parameters that can be obtained, and describe these source advances and their bearing on metal ion implantation applications.

  1. Radio frequency multicusp ion source development (invited)

    SciTech Connect

    Leung, K.N.

    1996-03-01

    The radio-frequency (rf) driven multicusp source was originally developed for use in the Superconducting Super Collider injector. It has been demonstrated that the source can meet the H{sup {minus}} beam current and emittance requirements for this application. By employing a porcelain-coated antenna, a clean plasma discharge with very long-life operation can be achieved. Today, the rf source is used to generate both positive and negative hydrogen ion beams and has been tested in various particle accelerator laboratories throughout the world. Applications of this ion source have been extended to other fields such as ion beam lithography, oil-well logging, ion implantation, accelerator mass spectrometry and medical therapy machines. This paper summarizes the latest rf ion source technology and development at the Lawrence Berkeley National Laboratory. {copyright} {ital 1996 American Institute of Physics.}

  2. Peltier Refrigerators for Molecular Ion Sources

    NASA Astrophysics Data System (ADS)

    Hershcovitch, Ady

    2008-11-01

    Molecular ion sources have been considered for various applications. In particular, there is considerable effort to develop decaborane and octadecaborane ion sources for the semiconductor industry. Since the invention of the transistor, the trend has been to miniaturize semiconductor devices. As semiconductors become smaller (and get miniaturized), ion energy needed for implantation decreases, since shallow implantation is desired. But, due to space charge (intra-ion repulsion) effects, forming and transporting ion beams becomes a rather difficult task. These problems associated with lower energy ion beams limit implanter ion currents, thus leading to low production rates. One way to tackle the space charge problem is to use singly charged molecular ions. A crucial aspect in generating large molecular ion beam currents is ion source temperature control. Peltier coolers, which have in the past successfully utilized in BaF2 and CSI gamma ray detectors, may be ideal for this application. Clogging prevention of molecular ion sources is also a hurdle, which was overcome with special slots. Both topics are to be presented.

  3. Note: Ion source design for ion trap systems

    NASA Astrophysics Data System (ADS)

    Noriega, J. R.; Quevedo, M.; Gnade, B.; Vasselli, J.

    2013-06-01

    A small plasma (glow discharge) based ion source and circuit are described in this work. The ion source works by producing a high voltage pulsed discharge between two electrodes in a pressure range of 50-100 mTorr. A third mesh electrode is used for ion extraction. The electrodes are small stainless steel screws mounted in a MACOR ionization chamber in a linear arrangement. The electrode arrangement is driven by a circuit, design for low power operation. This design is a proof of concept intended for applications on small cylindrical ion traps.

  4. Performance of an inverted ion source

    SciTech Connect

    Salvadori, M. C.; Teixeira, F. S.; Sgubin, L. G.; Araujo, W. W. R.; Spirin, R. E.; Oks, E. M.; Brown, I. G.

    2013-02-15

    Whereas energetic ion beams are conventionally produced by extracting ions (say, positive ions) from a plasma that is held at high (positive) potential, with ion energy determined by the potential drop through which the ions fall in the beam formation electrode system, in the device described here the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space maintained at high (negative) potential. We refer to this configuration as an 'inverted ion source.' This approach allows considerable savings both technologically and economically, rendering feasible some ion beam applications, in particular small-scale ion implantation, that might otherwise not be possible for many researchers and laboratories. We have developed a device of this kind utilizing a metal vapor vacuum arc plasma source, and explored its operation and beam characteristics over a range of parameter variation. The downstream beam current has been measured as a function of extraction voltage (5-35 kV), arc current (50-230 A), metal ion species (Ti, Nb, Au), and extractor grid spacing and beamlet aperture size (3, 4, and 5 mm). The downstream ion beam current as measured by a magnetically-suppressed Faraday cup was up to as high as 600 mA, and with parametric variation quite similar to that found for the more conventional metal vapor vacuum arc ion source.

  5. Glow plasma trigger for electron cyclotron resonance ion sources

    SciTech Connect

    Vodopianov, A. V.; Golubev, S. V.; Izotov, I. V.; Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.

    2010-02-15

    Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 {mu}s and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10{sup 12} cm{sup -3}, required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T{sub e}{approx_equal}20 eV.

  6. Glow plasma trigger for electron cyclotron resonance ion sources.

    PubMed

    Vodopianov, A V; Golubev, S V; Izotov, I V; Nikolaev, A G; Oks, E M; Savkin, K P; Yushkov, G Yu

    2010-02-01

    Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 micros and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10(12) cm(-3), required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T(e) approximately = 20 eV. PMID:20192326

  7. Pseudo ribbon metal ion beam source

    SciTech Connect

    Stepanov, Igor B. Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-02-15

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  8. ION SOURCE WITH SPACE CHARGE NEUTRALIZATION

    DOEpatents

    Flowers, J.W.; Luce, J.S.; Stirling, W.L.

    1963-01-22

    This patent relates to a space charge neutralized ion source in which a refluxing gas-fed arc discharge is provided between a cathode and a gas-fed anode to provide ions. An electron gun directs a controlled, monoenergetic electron beam through the discharge. A space charge neutralization is effected in the ion source and accelerating gap by oscillating low energy electrons, and a space charge neutralization of the source exit beam is effected by the monoenergetic electron beam beyond the source exit end. The neutralized beam may be accelerated to any desired energy at densities well above the limitation imposed by Langmuir-Child' s law. (AEC)

  9. An overview of LINAC ion sources

    SciTech Connect

    Keller, Roderich

    2008-01-01

    This paper discusses ion sources used in high-duty-factor proton and H{sup -} Linacs as well as in accelerators utilizing multi-charged heavy ions, mostly for nuclear physics applications. The included types are Electron Cyclotron Resonance (ECR) sources as well as filament and rf driven multicusp sources. The paper does not strive to attain encyclopedic character but rather to highlight major lines of development, peak performance parameters and type-specific limitations and problems of these sources. The main technical aspects being discussed are particle feed, plasma generation and ion production by discharges, and plasma confinement.

  10. Electron string ion sources for carbon ion cancer therapy accelerators.

    PubMed

    Boytsov, A Yu; Donets, D E; Donets, E D; Donets, E E; Katagiri, K; Noda, K; Ponkin, D O; Ramzdorf, A Yu; Salnikov, V V; Shutov, V B

    2015-08-01

    The type of the Electron String Ion Sources (ESIS) is considered to be the appropriate one to produce pulsed C(4+) and C(6+) ion beams for cancer therapy accelerators. In fact, the new test ESIS Krion-6T already now provides more than 10(10) C(4+) ions per pulse and about 5 × 10(9) C(6+) ions per pulse. Such ion sources could be suitable to apply at synchrotrons. It has also been found that Krion-6T can provide more than 10(11) C(6+) ions per second at the 100 Hz repetition rate, and the repetition rate can be increased at the same or larger ion output per second. This makes ESIS applicable at cyclotrons as well. ESIS can be also a suitable type of ion source to produce the (11)C radioactive ion beams. A specialized cryogenic cell was experimentally tested at the Krion-2M ESIS for pulse injection of gaseous species into the electron string. It has been shown in experiments with stable methane that the total conversion efficiency of methane molecules to C(4+) ions reached 5%÷10%. For cancer therapy with simultaneous irradiation and precise dose control (positron emission tomography) by means of (11)C, transporting to the tumor with the primary accelerated (11)C(4+) beam, this efficiency is preliminarily considered to be large enough to produce the (11)C(4+) beam from radioactive methane and to inject this beam into synchrotrons. PMID:26329182

  11. Electron string ion sources for carbon ion cancer therapy accelerators

    NASA Astrophysics Data System (ADS)

    Boytsov, A. Yu.; Donets, D. E.; Donets, E. D.; Donets, E. E.; Katagiri, K.; Noda, K.; Ponkin, D. O.; Ramzdorf, A. Yu.; Salnikov, V. V.; Shutov, V. B.

    2015-08-01

    The type of the Electron String Ion Sources (ESIS) is considered to be the appropriate one to produce pulsed C4+ and C6+ ion beams for cancer therapy accelerators. In fact, the new test ESIS Krion-6T already now provides more than 1010 C4+ ions per pulse and about 5 × 109 C6+ ions per pulse. Such ion sources could be suitable to apply at synchrotrons. It has also been found that Krion-6T can provide more than 1011 C6+ ions per second at the 100 Hz repetition rate, and the repetition rate can be increased at the same or larger ion output per second. This makes ESIS applicable at cyclotrons as well. ESIS can be also a suitable type of ion source to produce the 11C radioactive ion beams. A specialized cryogenic cell was experimentally tested at the Krion-2M ESIS for pulse injection of gaseous species into the electron string. It has been shown in experiments with stable methane that the total conversion efficiency of methane molecules to C4+ ions reached 5%÷10%. For cancer therapy with simultaneous irradiation and precise dose control (positron emission tomography) by means of 11C, transporting to the tumor with the primary accelerated 11C4+ beam, this efficiency is preliminarily considered to be large enough to produce the 11C4+ beam from radioactive methane and to inject this beam into synchrotrons.

  12. Ion sources for sealed neutron tubes

    SciTech Connect

    Burns, E.J.T.; Bischoff, G.C.

    1996-11-01

    Fast and thermal neutron activation analysis with sealed neutron generators has been used to detect oil (oil logging), hazardous waste, fissile material, explosives, and contraband (drugs). Sealed neutron generators, used in the above applications, must be small and portable, have good electrical efficiency and long life. The ion sources used in the sealed neutron tubes require high gas utilization efficiencies or low pressure operation with high ionization efficiencies. In this paper, the authors compare a number of gas ion sources that can be used in sealed neutron tubes. The characteristics of the most popular ion source, the axial Penning discharge will be discussed as part of the zetatron neutron generator. Other sources to be discussed include the SAMIS source and RF ion source.

  13. Cold atomic beam ion source for focused ion beam applications

    SciTech Connect

    Knuffman, B.; Steele, A. V.; McClelland, J. J.

    2013-07-28

    We report measurements and modeling of an ion source that is based on ionization of a laser-cooled atomic beam. We show a high brightness and a low energy spread, suitable for use in next-generation, high-resolution focused ion beam systems. Our measurements of total ion current as a function of ionization conditions support an analytical model that also predicts the cross-sectional current density and spatial distribution of ions created in the source. The model predicts a peak brightness of 2 × 10{sup 7} A m{sup −2} sr{sup −1} eV{sup −1} and an energy spread less than 0.34 eV. The model is also combined with Monte-Carlo simulations of the inter-ion Coulomb forces to show that the source can be operated at several picoamperes with a brightness above 1 × 10{sup 7} A m{sup −2} sr{sup −1} eV{sup −1}. We estimate that when combined with a conventional ion focusing column, an ion source with these properties could focus a 1 pA beam into a spot smaller than 1 nm. A total current greater than 5 nA was measured in a lower-brightness configuration of the ion source, demonstrating the possibility of a high current mode of operation.

  14. Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Vogl, G. W.; Monz, K. H.; Nguyen, Quang D.; Huter, Michael; Rille, Eduard P.; Pulker, Hans K.

    1994-11-01

    In this work the properties of Si3N4 and AIN thin films deposited onto unheated substrates by Reactive Low Voltage Ion Plating (RLVIP) and Reactive DC-Magnetron Sputtering (RDCMS) were investigated. In both experimental setups pure silicon and aluminum were used as starting materials. Working and reactive gas were argon and nitrogen respectively. All Si3N4 films showed amorphous structure in X-ray and electron diffraction whereas AIN films were found to be polycrystalline and could be indexed to the bulk hexagonal AIN lattice. The values of the film refractive index at 550 nm are 2.08 for RLVIP Si3N4, 2.12 for RLVIP AIN, 2.02 for RDCMS Si3N4, and 1.98 or 2.12 for AIN depending on the total pressure in the range of 8 E - 1 Pa and 1 E - 1 Pa during the process. The high optical transmission region for the Si3N4 films lies between 0.23 and 9.5 micrometers , and for AIN films between 0.2 and 12.5 micrometers . Purity and composition were measured by electron microprobe, infrared transmission, nuclear reactions, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Transmission electron micrographs of Pt-C replicas of fracture cross sections of the films show their different microstructure and surface topography. Environmental tests proved the RLVIP Si3N4 films to be very hard, of high density and of strong adherence to glass.

  15. Key issues in plasma source ion implantation

    SciTech Connect

    Rej, D.J.; Faehl, R.J.; Matossian, J.N.

    1996-09-01

    Plasma source ion implantation (PSII) is a scaleable, non-line-of-sight method for the surface modification of materials. In this paper, we consider three important issues that should be addressed before wide-scale commercialization of PSII: (1) implant conformality; (2) ion sources; and (3) secondary electron emission. To insure uniform implanted dose over complex shapes, the ion sheath thickness must be kept sufficiently small. This criterion places demands on ion sources and pulsed-power supplies. Another limitation to date is the availability of additional ion species beyond B, C, N, and 0. Possible solutions are the use of metal arc vaporization sources and plasma discharges in high-vapor-pressure organometallic precursors. Finally, secondary electron emission presents a potential efficiency and x-ray hazard issue since for many metallurgic applications, the emission coefficient can be as large as 20. Techniques to suppress secondary electron emission are discussed.

  16. Thirty-centimeter-diameter ion milling source

    NASA Technical Reports Server (NTRS)

    Robinson, R. S.

    1978-01-01

    A 30-cm beam diameter ion source has been designed and fabricated for micromachining and sputtering applications. An argon ion current density of 1 mA/cu cm at 500 eV ion energy was selected as a design operating condition. The completed ion source met the design criteria at this operating condition with a uniform and well-collimated beam having an average variation in current density of + or - 5% over the center of 20 cm of the beam. This ion source has a multipole magnetic field that employs permanent magnets between permeable pole pieces. Langmuir probe surveys of the source plasma support the design concepts of a multipole field and a circumferential cathode to enhance plasma uniformity.

  17. ECR ion source with electron gun

    DOEpatents

    Xie, Z.Q.; Lyneis, C.M.

    1993-10-26

    An Advanced Electron Cyclotron Resonance ion source having an electron gun for introducing electrons into the plasma chamber of the ion source is described. The ion source has a injection enclosure and a plasma chamber tank. The plasma chamber is defined by a plurality of longitudinal magnets. The electron gun injects electrons axially into the plasma chamber such that ionization within the plasma chamber occurs in the presence of the additional electrons produced by the electron gun. The electron gun has a cathode for emitting electrons therefrom which is heated by current supplied from an AC power supply while bias potential is provided by a bias power supply. A concentric inner conductor and outer conductor carry heating current to a carbon chuck and carbon pusher which hold the cathode in place and also heat the cathode. In the Advanced Electron Cyclotron Resonance ion source, the electron gun replaces the conventional first stage used in prior electron cyclotron resonance ion generators. 5 figures.

  18. Ion source design for industrial applications

    NASA Technical Reports Server (NTRS)

    Kaufman, H. R.; Robinson, R. S.

    1981-01-01

    The design of broad-beam industrial ion sources is described. The approach used emphasizes refractory metal cathodes and permanent-magnet multipole discharge chambers. Design procedures and sample calculations are given for the discharge chamber, ion optics, cathodes, and magnetic circuit. Hardware designs are included for the isolator, cathode supports, anode supports, pole-piece assembly, and ion-optics supports. There are other ways of designing most ion source components, but the designs presented are representative of current technology and adaptable to a wide range of configurations.

  19. Progress in ISOL target ion source systems

    NASA Astrophysics Data System (ADS)

    Köster, U.; Arndt, O.; Bouquerel, E.; Fedoseyev, V. N.; Frånberg, H.; Joinet, A.; Jost, C.; Kerkines, I. S. K.; Kirchner, R.; Targisol Collaboration

    2008-10-01

    The heart of every ISOL (isotope separation on-line) facility is its target and ion source system. Its efficiency, selectivity and rapidity is decisive for the production of intense and pure ion beams of short-lived isotopes. Recent progress in ISOL target and ion source technology is discussed at the examples of radioactive ion beams of exotic zinc and tin isotopes that were purified by isothermal chromatography and molecular sideband separation respectively. An outlook is given to which other elements these purification methods are applicable.

  20. Inert gas ion source program

    NASA Technical Reports Server (NTRS)

    Ramsey, W. D.

    1978-01-01

    THe original 12 cm hexagonal magneto-electrostatic containment discharge chamber has been optimized for argon and xenon operation. Argon mass utilization efficiencies of 65 to 77 percent were achieved at keeper-plus-main discharge energy consumptions of 200 to 458 eV/ion, respectively. Xenon performance of 84 to 96 percent mass utilization was realized at 203 to 350 eV/ion. The optimization process and test results are discussed.

  1. Ion source with external RF antenna

    DOEpatents

    Leung, Ka-Ngo; Ji, Qing; Wilde, Stephen

    2005-12-13

    A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.

  2. Electrospray ion source with reduced analyte electrochemistry

    DOEpatents

    Kertesz, Vilmos; Van Berkel, Gary J

    2013-07-30

    An electrospray ion (ESI) source and method capable of ionizing an analyte molecule without oxidizing or reducing the analyte of interest. The ESI source can include an emitter having a liquid conduit, a working electrode having a liquid contacting surface, a spray tip, a secondary working electrode, and a charge storage coating covering partially or fully the liquid contacting surface of the working electrode. The liquid conduit, the working electrode and the secondary working electrode can be in liquid communication. The electrospray ion source can also include a counter electrode proximate to, but separated from, said spray tip. The electrospray ion source can also include a power system for applying a voltage difference between the working electrodes and a counter-electrode. The power system can deliver pulsed voltage changes to the working electrodes during operation of said electrospray ion source to minimize the surface potential of the charge storage coating.

  3. Electrospray ion source with reduced analyte electrochemistry

    DOEpatents

    Kertesz, Vilmos [Knoxville, TN; Van Berkel, Gary [Clinton, TN

    2011-08-23

    An electrospray ion (ESI) source and method capable of ionizing an analyte molecule without oxidizing or reducing the analyte of interest. The ESI source can include an emitter having a liquid conduit, a working electrode having a liquid contacting surface, a spray tip, a secondary working electrode, and a charge storage coating covering partially or fully the liquid contacting surface of the working electrode. The liquid conduit, the working electrode and the secondary working electrode can be in liquid communication. The electrospray ion source can also include a counter electrode proximate to, but separated from, said spray tip. The electrospray ion source can also include a power system for applying a voltage difference between the working electrodes and a counter-electrode. The power system can deliver pulsed voltage changes to the working electrodes during operation of said electrospray ion source to minimize the surface potential of the charge storage coating.

  4. Design and simulation of ion optics for ion sources for production of singly charged ions

    NASA Astrophysics Data System (ADS)

    Zelenak, A.; Bogomolov, S. L.

    2004-05-01

    During the last 2 years different types of the singly charged ion sources were developed for FLNR (JINR) new projects such as Dubna radioactive ion beams, (Phase I and Phase II), the production of the tritium ion beam and the MASHA mass separator. The ion optics simulations for 2.45 GHz electron cyclotron resonance source, rf source, and the plasma ion source were performed. In this article the design and simulation results of the optics of new ion sources are presented. The results of simulation are compared with measurements obtained during the experiments.

  5. Three chamber negative ion source

    DOEpatents

    Leung, Ka-Ngo; Ehlers, Kenneth W.; Hiskes, John R.

    1985-01-01

    A negative ion vessel is divided into an excitation chamber, a negative ionization chamber and an extraction chamber by two magnetic filters. Input means introduces neutral molecules into a first chamber where a first electron discharge means vibrationally excites the molecules which migrate to a second chamber. In the second chamber a second electron discharge means ionizes the molecules, producing negative ions which are extracted into or by a third chamber. A first magnetic filter prevents high energy electrons from entering the negative ionization chamber from the excitation chamber. A second magnetic filter prevents high energy electrons from entering the extraction chamber from the negative ionizing chamber. An extraction grid at the end of the negative ion vessel attracts negative ions into the third chamber and accelerates them. Another grid, located adjacent to the extraction grid, carries a small positive voltage in order to inhibit positive ions from migrating into the extraction chamber and contour the plasma potential. Additional electrons can be suppressed from the output flux using ExB forces provided by magnetic field means and the extractor grid electric potential.

  6. Ion production from solid state laser ion sources

    SciTech Connect

    Gottwald, T.; Havener, Charles C; Lassen, J.; Liu, Yuan; Mattolat, C.; Raeder, S.; Rothe, S.; Wendt, K.

    2010-01-01

    Laser ion sources based on resonant excitation and ionization of atoms are well-established tools for selective and efficient production of radioactive ion beams. Recent developments are focused on the use of the state-of-the-art all solid-state laser systems. To date, 35 elements of the periodic table are available from laser ion sources based on tunable Ti:sapphire lasers. Recent progress in this field regarding the establishment of suitable optical excitation schemes for Ti:sapphire lasers are reported.

  7. Ion production from solid state laser ion sources

    SciTech Connect

    Gottwald, T.; Mattolat, C.; Raeder, S.; Wendt, K.; Havener, C.; Liu, Y.; Lassen, J.; Rothe, S.

    2010-02-15

    Laser ion sources based on resonant excitation and ionization of atoms are well-established tools for selective and efficient production of radioactive ion beams. Recent developments are focused on the use of the state-of-the-art all solid-state laser systems. To date, 35 elements of the periodic table are available from laser ion sources based on tunable Ti:sapphire lasers. Recent progress in this field regarding the establishment of suitable optical excitation schemes for Ti:sapphire lasers are reported.

  8. Development of a microwave ion source for ion implantations.

    PubMed

    Takahashi, N; Murata, H; Kitami, H; Mitsubori, H; Sakuraba, J; Soga, T; Aoki, Y; Katoh, T

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P(+) beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas. PMID:26932118

  9. Development of a microwave ion source for ion implantations

    NASA Astrophysics Data System (ADS)

    Takahashi, N.; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T.

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P+ beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P+ beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.

  10. ION SOURCE (R.F. INDUCTION TYPE)

    DOEpatents

    Mills, C.B.

    1963-04-01

    A method is given for producing energetic ions by ionizing a gas with an oscillating electric field which is parallel to a confining magnetic field, then reorienting the fields perpendicular to each other to accelerate the ions to higher energies. An ion source is described wherein a secondary coil threads the bottom of a rectangular ionization chamber and induces an oscillating field parallel to a fixed intense magnetic field through the chamber. (AEC)

  11. H(-) ion source developments at the SNS.

    PubMed

    Welton, R F; Stockli, M P; Murray, S N; Pennisi, T R; Han, B; Kang, Y; Goulding, R H; Crisp, D W; Sparks, D O; Luciano, N P; Carmichael, J R; Carr, J

    2008-02-01

    The U.S. Spallation Neutron Source (SNS) will require substantially higher average and pulse H(-) beam currents than can be produced from conventional ion sources such as the base line SNS source. H(-) currents of 40-50 mA (SNS operations) and 70-100 mA (power upgrade project) with a rms emittance of 0.20-0.35pi mm mrad and a approximately 7% duty factor will be needed. We are therefore investigating several advanced ion source concepts based on rf plasma excitation. First, the performance characteristics of an external antenna source based on an Al(2)O(3) plasma chamber combined with an external multicusp magnetic configuration, an elemental Cs system, and plasma gun will be discussed. Second, the first plasma measurements of a helicon-driven H(-) ion source will also be presented. PMID:18315274

  12. H- ion source developments at the SNS

    SciTech Connect

    Welton, Robert F; Stockli, Martin P; Murray Jr, S N; Pennisi, Terry R; Han, Baoxi; Kang, Yoon W; Goulding, Richard Howell; Crisp, Danny W; Sparks, Dennis O; Luciano, Nicholas P; Carmichael, Justin R; Carr, Jr, Jerry

    2008-01-01

    The U.S. Spallation Neutron Source (SNS) will require substantially higher average and pulse H- beam currents than can be produced from conventional ion sources such as the base line SNS source. H- currents of 40-50 mA (SNS operations) and 70-100 mA (power upgrade project) with an rms emittance of 0.20-0.35 Pi mm mrad and a ~7% duty factor will be needed. We are therefore investigating several advanced ion source concepts based on RF excitation. First, the performance characteristics of an external antenna source based on an Al2O3 plasma chamber combined with an external multicusp magnetic configuration, an elemental Cs system, and plasma gun will be discussed. Second, the first plasma measurements of a helicon-driven H- ion source will also be presented.

  13. Hollow cathode and ion accelerator system for current ion sources

    SciTech Connect

    Aston, G.

    1981-01-01

    A small self-heating hollow cathode has been designed and tested which uses a novel flowing plasma starting concept to eliminate the need for cathode heating elements and low work function insert materials. In a magnetic field free ion source, this cathode has reliably and repeatedly produced arc currents, using argon, of 100 ampere (the power supply limit) at arc voltages of 22 volts. The cathode operates with a high gas stagnation pressure and plasma density to produce field enhanced thermionic emission from the electron emitting surface, a 0.02mm thick rolled tungsten foil cylinder, without appreciable erosion of this surface. Possible applications of larger versions of this hollow cathode for use in neutral beam injector ion sources are discussed. An ion accelerator system has also been designed and tested which combines a unique arrangement of multiple hole and slit apertures to amplify the extracted ion current density by a factor of four during the ion acceleration process.

  14. Highly Stripped Ion Sources for MeV Ion Implantation

    SciTech Connect

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  15. Fabrication of ion source components by electroforming

    SciTech Connect

    Schechter, D.E.; Sluss, F.

    1983-01-01

    Several components of the Oak Ridge National Laboratory (ORNL)/Magnetic Fusion Test Facility (MFTF-B) ion source have been fabricated utilizing an electroforming process. A procedure has been developed for enclosing coolant passages in copper components by electrodepositing a thick (greater than or equal to 0.75-mm) layer of copper (electroforming) over the top of grooves machined into the copper component base. Details of the procedure to fabricate acceleration grids and other ion source components are presented.

  16. Simulation and analysis of solenoidal ion sources

    SciTech Connect

    Alderwick, A. R.; Jardine, A. P.; Hedgeland, H.; MacLaren, D. A.; Allison, W.; Ellis, J.

    2008-12-15

    We present a detailed analysis and simulation of solenoidal, magnetically confined electron bombardment ion sources, aimed at molecular beam detection. The aim is to achieve high efficiency for singly ionized species while minimizing multiple ionization. Electron space charge plays a major role and we apply combined ray tracing and finite element simulations to determine the properties of a realistic geometry. The factors controlling electron injection and ion extraction are discussed. The results from simulations are benchmarked against experimental measurements on a prototype source.

  17. An advanced negative hydrogen ion source.

    PubMed

    Goncharov, Alexey A; Dobrovolsky, Andrey N; Goretskii, Victor P

    2016-02-01

    The results of investigation of emission productivity of negative particles source with cesiated combined discharge are presented. A cylindrical beam of negative hydrogen ions with density about 2 A/cm(2) in low noise mode on source emission aperture is obtained. The total beam current values are up to 200 mA for negative hydrogen ions and up to 1.5 A for all negative particles with high divergence after source. The source has simple design and can produce stable discharge with low level of oscillation. PMID:26931996

  18. Design of long pulse/steady state negative hydrogen ion sources for fusion applications

    SciTech Connect

    Prelec, K.

    1980-01-01

    By using parameters of ion sources when operating in a pulsed mode and without cooling (pulse length < 0.1 s), requirements have been determined for a long pulse (several seconds) or steady state operating mode and two sources have been designed and fabricated. First of the two is a penning source, designed for a steady state operation with a cathode power density of 1 kW/cm/sup 2/. For the range of cathode power densities between 0.2 kW/cm/sup 2/ and 1 Kw/cm/sup 2/, nucleated boiling has to be used for heat removal; below 0.2 kW/cm/sup 2/ water flow cooling suffices. Although this source should deliver 0.3 to 0.5 A of H/sup -/ ions in a steady state operation and at full power, the other source, which has a magnetron geometry, is more promising. The latter incorporates two new features compared to first designs, geometrical focusing of fast, primary negative hydrogen ions from the cathode into the extraction slit, and a wider discharge gap in the back of the source. These two changes have resulted in an improvement of the power and gas efficiencies by a factor of 3 to 4 and in a reduction of the cathode power density by an order of magnitude. The source has water cooling for all the electrodes, because maximum power densities will not be higher than 0.2 kW/cm/sup 2/. Very recently a modification of this magnetron source is being considered; it consists of plasma injection into the source from a hollow cathode discharge.

  19. Negative ion source with external RF antenna

    DOEpatents

    Leung, Ka-Ngo; Hahto, Sami K.; Hahto, Sari T.

    2007-02-13

    A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source. A converter can be included in the ion source to produce negative ions.

  20. Laser ion sources for particle accelerators

    NASA Astrophysics Data System (ADS)

    Sherwood, T. R.

    1996-05-01

    There is an interest in accelerating atomic nuclei to produce particle beams for medical therapy, atomic and nuclear physics, inertial confinement fusion and particle physics. Laser Ion Sources, in which ions are extracted from plasma created when a high power density laser beam pulse strikes a solid surface in a vacuum, are not in common use. However, some new developments in which heavy ions have been accelerated show that such sources have the potential to provide the beams required for high-energy accelerator systems.

  1. Excellent vacuum tribological properties of Pb/PbS film deposited by RF magnetron sputtering and ion sulfurizing.

    PubMed

    Guozheng, Ma; Binshi, Xu; Haidou, Wang; Shuying, Chen; Zhiguo, Xing

    2014-01-01

    Soft metal Pb film of 3 μm in thickness was deposited on AISI 440C steel by RF magnetron sputtering, and then some of the Pb film samples were treated by low-temperature ion sulfurizing (LTIS) and formed Pb/PbS composite film. Tribological properties of the Pb and Pb/PbS films were tested contrastively in vacuum and air condition using a self-developed tribometer (model of MSTS-1). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were adopted to analyze the microstructure and chemical construction of the films and their worn surfaces. The results show that a mass of Pb was changed to PbS during the process of LTIS. In air condition, owing to the severe oxidation effect, pure Pb film showed relatively high friction coefficients (0.6), and Pb/PbS composite film also lost its friction-reduction property after sliding for a short time. In a vacuum, the average friction coefficients of Pb film were about 0.1, but the friction coefficient curve fluctuated obviously. And the Pb/PbS composite film exhibited excellent tribological properties in vacuum condition. Its friction coefficients keep stable at a low value of about 0.07 for a long time. If takes the value of friction coefficients exceeding 0.2 continuously as a criterion of lubrication failure, the sliding friction life of Pb/PbS film was as long as 3.2 × 10(5) r, which is 8 times of that of the Pb film. It can be concluded that the Pb/PbS film has excellent vacuum tribological properties and important foreground for applying in space solid lubrication related fields. PMID:24308504

  2. Laser ion source with solenoid for Brookhaven National Laboratory-electron beam ion source.

    PubMed

    Kondo, K; Yamamoto, T; Sekine, M; Okamura, M

    2012-02-01

    The electron beam ion source (EBIS) preinjector at Brookhaven National Laboratory (BNL) is a new heavy ion-preinjector for relativistic heavy ion collider (RHIC) and NASA Space Radiation Laboratory (NSRL). Laser ion source (LIS) is a primary ion source provider for the BNL-EBIS. LIS with solenoid at the plasma drift section can realize the low peak current (∼100 μA) with high charge (∼10 nC) which is the BNL-EBIS requirement. The gap between two solenoids does not cause serious plasma current decay, which helps us to make up the BNL-EBIS beamline. PMID:22380298

  3. Electron string ion sources for carbon ion cancer therapy accelerators

    SciTech Connect

    Boytsov, A. Yu.; Donets, D. E.; Donets, E. D.; Donets, E. E.; Ponkin, D. O.; Ramzdorf, A. Yu.; Salnikov, V. V.; Shutov, V. B.; Katagiri, K.; Noda, K.

    2015-08-15

    The type of the Electron String Ion Sources (ESIS) is considered to be the appropriate one to produce pulsed C{sup 4+} and C{sup 6+} ion beams for cancer therapy accelerators. In fact, the new test ESIS Krion-6T already now provides more than 10{sup 10} C{sup 4+} ions per pulse and about 5 × 10{sup 9} C{sup 6+} ions per pulse. Such ion sources could be suitable to apply at synchrotrons. It has also been found that Krion-6T can provide more than 10{sup 11} C{sup 6+} ions per second at the 100 Hz repetition rate, and the repetition rate can be increased at the same or larger ion output per second. This makes ESIS applicable at cyclotrons as well. ESIS can be also a suitable type of ion source to produce the {sup 11}C radioactive ion beams. A specialized cryogenic cell was experimentally tested at the Krion-2M ESIS for pulse injection of gaseous species into the electron string. It has been shown in experiments with stable methane that the total conversion efficiency of methane molecules to C{sup 4+} ions reached 5%÷10%. For cancer therapy with simultaneous irradiation and precise dose control (positron emission tomography) by means of {sup 11}C, transporting to the tumor with the primary accelerated {sup 11}C{sup 4+} beam, this efficiency is preliminarily considered to be large enough to produce the {sup 11}C{sup 4+} beam from radioactive methane and to inject this beam into synchrotrons.

  4. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO{sub 2} thin films during growth at low temperatures

    SciTech Connect

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

    2012-03-01

    Growth of amorphous SiO{sub 2} thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O{sup -} ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO{sub 2} thin films by magnetron sputtering at low temperatures, controlled by the amount of O{sub 2} in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  5. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

    NASA Astrophysics Data System (ADS)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Álvarez, R.; Gil-Rostra, J.; González, J. C.; Cotrino, J.; Gonzalez-Elipe, A. R.; Palmero, A.

    2012-03-01

    Growth of amorphous SiO2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O- ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  6. Low temperature ion source for calutrons

    DOEpatents

    Veach, A.M.; Bell, W.A. Jr.; Howell, G.D. Jr.

    1979-10-10

    A new ion source assembly for calutrons has been provided for the efficient separation of elements having high vapor pressures. The strategic location of cooling pads and improved insulation permits operation of the source at lower temperatures. A vapor valve constructed of graphite and located in a constantly increasing temperature gradient provides reliable control of the vapor flow from the charge bottle to the arc chamber. A pronounced saving in calutron operating time and equipment maintenance has been achieved with the use of the present ion source.

  7. Low temperature ion source for calutrons

    DOEpatents

    Veach, Allen M.; Bell, Jr., William A.; Howell, Jr., George D.

    1981-01-01

    A new ion source assembly for calutrons has been provided for the efficient separation of elements having high vapor pressures. The strategic location of cooling pads and improved insulation permits operation of the source at lower temperatures. A vapor valve constructed of graphite and located in a constantly increasing temperature gradient provides reliable control of the vapor flow from the charge bottle to the arc chamber. A pronounced saving in calutron operating time and equipment maintenance has been achieved with the use of the present ion source.

  8. New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

    SciTech Connect

    Belykh, S. F.; Palitsin, V. V.; Veryovkin, I. V.; Kovarsky, A. P.; Chang, R. J. H.; Adriaens, A.; Dowsett, M. G.; Adams, F.

    2007-08-15

    A simple design for a cesium sputter ion source compatible with vacuum and ion-optical systems as well as with electronics of the commercially available Cameca IMS-4f instrument is reported. This ion source has been tested with the cluster primary ions of Si{sub n}{sup -} and Cu{sub n}{sup -}. Our experiments with surface characterization and depth profiling conducted to date demonstrate improvements of the analytical capabilities of the secondary ion mass spectrometry instrument due to the nonadditive enhancement of secondary ion emission and shorter ion ranges of polyatomic projectiles compared to atomic ones with the same impact energy.

  9. Plasma uniformity of microwave ion sources

    SciTech Connect

    Tokiguichi, K.; Sakudo, N.; Suzuki, K.; Kanomata, I.

    1980-09-01

    The ion saturation current uniformities of two different type plasma sources, a coaxial and a Lisitano coil type, are investigated using a moveable Langmuir probe. They both operate under off-resonance microwave discharge. H/sub 2/ or Ar is used as the discharge gas. The coaxial source provides better uniformities for ion saturation current, electron temperature, and electon density than the Lisitano coil, independent of the discharge gas species. The ion saturation current with the coaxial source is uniform within approx.15% inside a 40-mm-diam circle for a 0.17 Pa H/sub 2/ discharge. However, with the Lisitano coil, uniformity is limited to a 20-mm-diam circle. Furthermore, the Lisitano coil easily suffers from heat distortion because of difficulties in realizing a cooled system. It is also experimentally confirmed that the coaxial-type source is more appropriate for obtaining high density plasma under continuous operation.

  10. Saddle antenna radio frequency ion sources

    NASA Astrophysics Data System (ADS)

    Dudnikov, V.; Johnson, R.; Murray, S.; Pennisi, T.; Santana, M.; Piller, C.; Stockli, M.; Welton, R.; Breitschopf, J.; Dudnikova, G.

    2016-02-01

    Existing RF ion sources for accelerators have specific efficiencies for H+ and H- ion generation ˜3-5 mA/cm2 kW, where about 50 kW of RF power is typically needed for 50 mA beam current production. The Saddle Antenna (SA) surface plasma source (SPS) described here was developed to improve H- ion production efficiency, reliability, and availability. In SA RF ion source, the efficiency of positive ion generation in the plasma has been improved to 200 mA/cm2 kW. After cesiation, the current of negative ions to the collector was increased from 1 mA to 10 mA with RF power ˜1.5 kW in the plasma (6 mm diameter emission aperture) and up to 30 mA with ˜4 kW RF. Continuous wave (CW) operation of the SA SPS has been tested on the test stand. The general design of the CW SA SPS is based on the pulsed version. Some modifications were made to improve the cooling and cesiation stability. CW operation with negative ion extraction was tested with RF power up to ˜1.2 kW in the plasma with production up to Ic = 7 mA. A stable long time generation of H- beam without degradation was demonstrated in RF discharge with AlN discharge chamber.

  11. Saddle antenna radio frequency ion sources.

    PubMed

    Dudnikov, V; Johnson, R; Murray, S; Pennisi, T; Santana, M; Piller, C; Stockli, M; Welton, R; Breitschopf, J; Dudnikova, G

    2016-02-01

    Existing RF ion sources for accelerators have specific efficiencies for H(+) and H(-) ion generation ∼3-5 mA/cm(2) kW, where about 50 kW of RF power is typically needed for 50 mA beam current production. The Saddle Antenna (SA) surface plasma source (SPS) described here was developed to improve H(-) ion production efficiency, reliability, and availability. In SA RF ion source, the efficiency of positive ion generation in the plasma has been improved to 200 mA/cm(2) kW. After cesiation, the current of negative ions to the collector was increased from 1 mA to 10 mA with RF power ∼1.5 kW in the plasma (6 mm diameter emission aperture) and up to 30 mA with ∼4 kW RF. Continuous wave (CW) operation of the SA SPS has been tested on the test stand. The general design of the CW SA SPS is based on the pulsed version. Some modifications were made to improve the cooling and cesiation stability. CW operation with negative ion extraction was tested with RF power up to ∼1.2 kW in the plasma with production up to Ic = 7 mA. A stable long time generation of H(-) beam without degradation was demonstrated in RF discharge with AlN discharge chamber. PMID:26931988

  12. Development of polarized 3He ion source

    NASA Astrophysics Data System (ADS)

    Tanaka, M.; Takahashi, Y.; Shimoda, T.; Yasui, S.; Yosoi, M.; Takahisa, K.; Shimakura, N.

    2007-02-01

    A long history on the polarized 3He ion source developed at RCNP is presented. We started with an "OPPIS" (Optical Pumping Polarized Ion Source) and later found the fundamental difficulties in the OPPIS. To overcome them an "EPPIS" (Electron Pumping Polarized Ion Source) was proposed and its validity was experimentally proven. However, a serious technical disadvantage was also found in the EPPIS. To avoid this disadvantage we proposed a new concept, "SEPIS" (Spin Exchange Polarized Ion Source), which uses an enhanced spin-exchange cross section theoretically expected at low 3He+ incident energies for the 3He+ + Rb system. Next, we describe the present status of the SEPIS development; construction of a bench test device allowing the measurements of not only the spin-exchange cross sections σse but also the electron capture cross sections σec for the 3He+ + Rb system. The latest experimental data on σec are presented and compared with other previous experimental data and the theoretical calculations. A design study of the SEPIS for practical use in nuclear (cyclotron) and particle physics (synchrotron) is shortly mentioned. Finally, we mention possibility to polarize ions heavier than 3He as an application of SEPIS. The theoretical calculation showed that σse comparable to that for the 3He+ + Rb is expected for the Li2+ + Rb system, which suggests that the SEPIS will hopefully be a general tool to polarize any heavy ions.

  13. Ion Source Development at the SNS

    SciTech Connect

    Welton, R. F.; Han, B. X.; Kenik, E. A.; Murray, S. N.; Pennisi, T. R.; Potter, K. G.; Lang, B. R.; Santana, M.; Stockli, M. P.; Desai, N. J.

    2011-09-26

    The Spallation Neutron Source (SNS) now routinely operates near 1 MW of beam power on target with a highly-persistent {approx}38 mA peak current in the linac and an availability of {approx}90%. The {approx}1 ms-long, 60 Hz, {approx}50 mA H{sup -} beam pulses are extracted from a Cs-enhanced, multi-cusp, RF-driven, internal-antenna ion source. An electrostatic LEBT (Low Energy Beam Transport) focuses the 65 kV beam into the RFQ accelerator. The ion source and LEBT have normally a combined availability of {approx}99%. Although much progress has been made over the last years to achieve this level of availability further improvements are desirable. Failures of the internal antenna and occasionally impaired electron dump insulators require several source replacements per year. An attempt to overcome the antenna issues with an AlN external antenna source early in 2009 had to be terminated due to availability issues. This report provides a comprehensive review of the design, experimental history, status, and description of recently updated components and future plans for this ion source. The mechanical design for improved electron dump vacuum feedthroughs is also presented, which is compatible with the baseline and both external antenna ion sources.

  14. Ion Source Development at the SNS

    SciTech Connect

    Welton, Robert F; Desai, Nandishkumar J; Han, Baoxi; Kenik, Edward A; Murray Jr, S N; Pennisi, Terry R; Potter, Kerry G; Lang, Bonnie R; Santana, Manuel; Stockli, Martin P

    2011-01-01

    The Spallation Neutron Source (SNS) now routinely operates near 1 MW of beam power on target with a highly-persistent ~38 mA peak current in the linac and an availability of ~90%. The ~1 ms-long, 60 Hz, ~50 mA H- beam pulses are extracted from a Cs-enhanced, multi-cusp, RF-driven, internal-antenna ion source. An electrostatic LEBT (Low Energy Beam Transport) focuses the 65 kV beam into the RFQ accelerator. The ion source and LEBT have normally a combined availability of ~99%. Although much progress has been made over the last years to achieve this level of availability further improvements are desirable. Failures of the internal antenna and occasionally impaired electron dump insulators require several source replacements per year. An attempt to overcome the antenna issues with an AlN external antenna source early in 2009 had to be terminated due to availability issues. This report provides a comprehensive review of the design, experimental history, status, and description of recently updated components and future plans for this ion source. The mechanical design for improved electron dump vacuum feedthroughs is also presented, which is compatible with the baseline and both external antenna ion sources.

  15. DUAL HEATED ION SOURCE STRUCTURE HAVING ARC SHIFTING MEANS

    DOEpatents

    Lawrence, E.O.

    1959-04-14

    An ion source is presented for calutrons, particularly an electrode arrangement for the ion generator of a calutron ion source. The ion source arc chamber is heated and an exit opening with thermally conductive plates defines the margins of the opening. These plates are electrically insulated from the body of the ion source and are connected to a suitable source of voltage to serve as electrodes for shaping the ion beam egressing from the arc chamber.

  16. Ion source based on the cathodic arc

    DOEpatents

    Sanders, D.M.; Falabella, S.

    1994-02-01

    A cylindrically symmetric arc source to produce a ring of ions which leave the surface of the arc target radially and are reflected by electrostatic fields present in the source to a point of use, such as a part to be coated, is described. An array of electrically isolated rings positioned in the source serves the dual purpose of minimizing bouncing of macroparticles and providing electrical insulation to maximize the electric field gradients within the source. The source also includes a series of baffles which function as a filtering or trapping mechanism for any macroparticles. 3 figures.

  17. Ion source based on the cathodic arc

    DOEpatents

    Sanders, David M.; Falabella, Steven

    1994-01-01

    A cylindrically symmetric arc source to produce a ring of ions which leave the surface of the arc target radially and are reflected by electrostatic fields present in the source to a point of use, such as a part to be coated. An array of electrically isolated rings positioned in the source serves the dual purpose of minimizing bouncing of macroparticles and providing electrical insulation to maximize the electric field gradients within the source. The source also includes a series of baffles which function as a filtering or trapping mechanism for any macroparticles.

  18. Metal versus rare-gas ion irradiation during Ti{sub 1-x}Al{sub x}N film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias

    SciTech Connect

    Greczynski, Grzegorz; Lu Jun; Jensen, Jens; Petrov, Ivan; Greene, Joseph E.; Bolz, Stephan; Koelker, Werner; Schiffers, Christoph; Lemmer, Oliver; Hultman, Lars

    2012-11-15

    Metastable NaCl-structure Ti{sub 1-x}Al{sub x}N is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 Degree-Sign C. Three sets of experiments are carried out: a -60 V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti{sub 1-x}Al{sub x}N) with random orientation, due primarily to intense Ar{sup +} irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8 GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar{sup +} ion bombardment is greatly reduced in favor of irradiation predominantly by Al{sup +} ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar{sup +} to Al{sup +} bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.

  19. Reactive magnetron sputtering of highly (001)-textured WS2-x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growth

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Seeger, S.; Sieber, I.; Bohne, W.; Röhrich, J.; Strub, E.; Mientus, R.

    2006-02-01

    Tungsten disulfide WS2 is a layer-type semi-conductor with an energy band gap and an absorption coefficient making it suitable as an absorber for thin film solar cells. In the article [1] WS2-x films were pre-pared by reactive magnetron sputtering from a metallic tungsten target in Ar-H2S atmospheres.The cover figure shows in situ energy-dispersive X-ray diffraction patterns for films deposited at different substrate potentials, i.e. for deposition conditions with ion assistance at different ion energies. These spectra and the corresponding SEM photographs of the film morphology show the strong influence of the ion energy on the film growth. The crystallographic struc-ture of WS2-x is shown between the two SEM pictures.The first author, Klaus Ellmer, is working at the Hahn-Meitner-Institut Berlin, Dept. of Solar Energy Research. His research fields are thin film deposition by reactive magnetron sputtering for solar cells, plasma characterization, in situ energy-dispersive X-ray diffraction and electronic transport in transpar-ent conductive oxides.

  20. Vacuum arc ion source development at GSI

    SciTech Connect

    Spaedtke, P.; Emig, H.; Wolf, B.H.

    1996-08-01

    Ion beams produced by the Mevva ion source are well suited for the injection into a synchrotron accelerator due to the low repetition rate (0.2 ... 5 Hz, the higher repetition rate is for the optimization of the linear accelerator only) and the short pulse length (up to 0.5ms). From the beginning of the authors experience with the Mevva ion source at GSI they tried to improve the reliability of pulse-to-pulse reproducibility and to minimize the noise on the extracted ion beam. For accelerator application this is highly necessary, otherwise the accelerator tuning and optimization becomes very difficult or even impossible. Already the beam transport becomes difficult for a noisy beam, because space charge compensation can be destroyed (at least partially). Furthermore a noisy dc-beam results in some rf-buckets which might be even empty.

  1. Compact ion source neutron generator

    SciTech Connect

    Schenkel, Thomas; Persaud, Arun; Kapadia, Rehan; Javey, Ali; Chang-Hasnain, Constance; Rangelow, Ivo; Kwan, Joe

    2015-10-13

    A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

  2. Design study of primary ion provider for relativistic heavy ion collider electron beam ion source.

    PubMed

    Kondo, K; Kanesue, T; Tamura, J; Okamura, M

    2010-02-01

    Brookhaven National Laboratory has developed the new preinjector system, electron beam ion source (EBIS) for relativistic heavy ion collider (RHIC) and National Aeronautics and Space Administration Space Radiation Laboratory. Design of primary ion provider is an essential problem since it is required to supply beams with different ion species to multiple users simultaneously. The laser ion source with a defocused laser can provide a low charge state and low emittance ion beam, and is a candidate for the primary ion source for RHIC-EBIS. We show a suitable design with appropriate drift length and solenoid, which helps to keep sufficient total charge number with longer pulse length. The whole design of primary ion source, as well as optics arrangement, solid targets configuration and heating about target, is presented. PMID:20192366

  3. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, K.N.

    1996-09-24

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

  4. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

  5. Fourth generation electron cyclotron resonance ion sources.

    PubMed

    Lyneis, Claude M; Leitner, D; Todd, D S; Sabbi, G; Prestemon, S; Caspi, S; Ferracin, P

    2008-02-01

    The concepts and technical challenges related to developing a fourth generation electron cyclotron resonance (ECR) ion source with a rf frequency greater than 40 GHz and magnetic confinement fields greater than twice B(ECR) will be explored in this article. Based on the semiempirical frequency scaling of ECR plasma density with the square of operating frequency, there should be significant gains in performance over current third generation ECR ion sources, which operate at rf frequencies between 20 and 30 GHz. While the third generation ECR ion sources use NbTi superconducting solenoid and sextupole coils, the new sources will need to use different superconducting materials, such as Nb(3)Sn, to reach the required magnetic confinement, which scales linearly with rf frequency. Additional technical challenges include increased bremsstrahlung production, which may increase faster than the plasma density, bremsstrahlung heating of the cold mass, and the availability of high power continuous wave microwave sources at these frequencies. With each generation of ECR ion sources, there are new challenges to be mastered, but the potential for higher performance and reduced cost of the associated accelerator continues to make this a promising avenue for development. PMID:18315111

  6. Computer analysis, design and construction of the BNL Mk V magnetron

    SciTech Connect

    McKenzie-Wilson, R.B.; Kovarik, V.J.

    1981-01-01

    As part of a program to develop a high energy neutral beam injector for fusion reactor applications, the BNL Neutral Beam Group is studying, among other options, a surface plasma source of the magnetron type. This source has been developed to the point at which a large compact model, known as the Mk V magnetron, has been designed and constructed. The source is designed to operate in the steady state mode and to produce 1-2A of H/sup -/(D/sup -/) ions at 25 kV. Under these conditions, 18 KW of heat are removed from the source by the cooling system.

  7. Ion sources and targets for radioactive beams

    SciTech Connect

    Schiffer, J.P.; Back, B.B.; Ahmad, I.

    1995-08-01

    A high-intensity ISOL-type radioactive beam facility depends critically on the performance of the target/ion source system. We developed a concept for producing high-intensity secondary beams of fission fragments, such as {sup 132}Sn, using a two-part target and ion source combination. The idea involves stopping a 1000-kW beam of 200-MeV deuterons in a target of Be or U to produce a secondary beam of neutrons. Just behind the neutron production target is a second target, typically a porous form of UC, coupled to an ISOL-type ion source. In December 1994, we tested this concept with 200-MeV deuterons at low intensity in an experiment at the NSCL. The yields of characteristic gamma rays were measured and confirmed our predictions.

  8. The RHIC polarized H- ion source

    NASA Astrophysics Data System (ADS)

    Zelenski, A.; Atoian, G.; Raparia, D.; Ritter, J.; Steski, D.

    2016-02-01

    A novel polarization technique had been successfully implemented for the Relativistic Heavy Ion Collider (RHIC) polarized H- ion source upgrade to higher intensity and polarization. In this technique, a proton beam inside the high magnetic field solenoid is produced by ionization of the atomic hydrogen beam (from external source) in the He-gaseous ionizer cell. Further proton polarization is produced in the process of polarized electron capture from the optically pumped Rb vapor. The use of high-brightness primary beam and large cross sections of charge-exchange cross sections resulted in production of high intensity H- ion beam of 85% polarization. The source very reliably delivered polarized beam in the RHIC Run-2013 and Run-2015. High beam current, brightness, and polarization resulted in 75% polarization at 23 GeV out of Alternating Gradient Synchrotron (AGS) and 60%-65% beam polarization at 100-250 GeV colliding beams in RHIC.

  9. Plasma uniformity of microwave ion sources

    NASA Astrophysics Data System (ADS)

    Tokiguichi, K.; Sakudo, N.; Suzuki, K.; Kanomata, I.

    1980-10-01

    The ion saturation current uniformities of two different type plasma sources, a coaxial and a Lisitano coil type, are investigated using a moveable Langmuir probe. They both operate under off-resonance microwave discharge; H2 or Ar is used as the discharge gas. The coaxial source provides better uniformities for ion saturation current, electron temperature, and electron density than the Lisitano coil, independent of the discharge gas species. The ion saturation current with the coaxial source is uniform within about 15% inside a 40-mm-diam circle for a 0.17 Pa H2 discharge. However, with the Lisitano coil uniformity is limited to a 20-mm-diam circle and the coil is subject to heat distortion because of difficulties in realizing a cooled system

  10. The RHIC polarized H⁻ ion source.

    PubMed

    Zelenski, A; Atoian, G; Raparia, D; Ritter, J; Steski, D

    2016-02-01

    A novel polarization technique had been successfully implemented for the Relativistic Heavy Ion Collider (RHIC) polarized H(-) ion source upgrade to higher intensity and polarization. In this technique, a proton beam inside the high magnetic field solenoid is produced by ionization of the atomic hydrogen beam (from external source) in the He-gaseous ionizer cell. Further proton polarization is produced in the process of polarized electron capture from the optically pumped Rb vapor. The use of high-brightness primary beam and large cross sections of charge-exchange cross sections resulted in production of high intensity H(-) ion beam of 85% polarization. The source very reliably delivered polarized beam in the RHIC Run-2013 and Run-2015. High beam current, brightness, and polarization resulted in 75% polarization at 23 GeV out of Alternating Gradient Synchrotron (AGS) and 60%-65% beam polarization at 100-250 GeV colliding beams in RHIC. PMID:26932068