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Sample records for magnetron sputtering system

  1. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  2. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-09-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres.

  3. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  4. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  5. Quantitative analysis of sputter processes in a small magnetron system

    SciTech Connect

    Knittel, Ivo; Gothe, Marc; Hartmann, Uwe

    2005-11-15

    Sputter deposition of titanium in argon from a small circular magnetron is characterized. The dependence of the deposition rate on pressure, power, and target-substrate distance has been measured. A framework for the application of the analytic approach by Keller and Simmons of ballistic and diffusive transport to simple three-dimensional sputter geometries is developed and applied. The sputter yield and the pressure-distance product are determined from the data set as the only fit parameters of the model. For the entire range of operation of the magnetron, the sputter process can be described in terms of the relatively simple approach.

  6. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-12-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres. The preliminary data on the properties of a Au-Cu binary alloy system by SEM and STEM analysis is presented.

  7. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  8. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  9. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    NASA Technical Reports Server (NTRS)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  10. A Complementary Type of Electrochromic Device by Radio Frequency Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change their optical properties reversibly in the visible region (400-800 nm) upon charge insertion/extraction reactions according to the applied voltage. A complementary type of EC device composes of two electrochromic layers, which is separated by an ionic conduction layer (electrolyte). In this work, the EC device was fabricated using vanadium oxide (V2O5) and titanium doped tungsten oxide (WO3-TiO2) electrodes. The EC electrodes were deposited as thin film structures by a reactive RF magnetron sputtering system in a medium of gas mixture of argon and oxygen. surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical property and durability of the EC device was investigated by a potentiostat system. Optical measurement was examined under applied voltages of +/- 2.5 V by a computer-controlled system, constantly.

  11. A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

    NASA Technical Reports Server (NTRS)

    Broadway, David; Ramsey, Brian; Gubarev, Mikhail

    2014-01-01

    The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

  12. Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

    SciTech Connect

    Walton, C; Gilmer, G; Zepeda-Ruiz, L; Wemhoff, A; Barbee, T

    2007-05-04

    The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, we have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.

  13. Titanium Aluminum Nitride Films Deposited by AC Reactive Magnetron Sputtering: Study of Positioning Effect in an Inverted Cylindrical Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Vandross, George Clinton, II

    TiAlN films were deposited on glass substrates by AC magnetron sputtering at 2 kW with constant Argon and Nitrogen gas flow rates to study the effects of positioning on the deposited films. The deposition system used was an ICM-10 IsoFlux cylindrical magnetron sputtering chamber. The samples were placed in different positions and tilts with respect to the location of the Titanium and Aluminum targets in the chamber. It was found that with change in position and application of tilts, deposited films acquired different physical and chemical properties. It is believed that the differences in these properties were caused by to the change in the incident angle of bombardment of the samples, and the change in surface areas of the samples presented to the targets at each location. As related to the physical traits of the samples, analysis using Scanning Electron Microscopy of the samples displayed variations in the topography, where differences in grain density could be noted as well as structure formations. The chemical properties were also noted to be affected by the variation of tilt and position applied to the sample. X-ray Diffraction Spectroscopy analysis of the samples showed the intensity of the TiAlN characteristic peak of the samples to differ from sample to sample. Results from the XRD analysis of this work showed a 157% and 176% increase in peak intensity of the 0° tilt sample of the Bottom Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. The results from the XRD analysis of this work also showed a 74% and 151% increase of the peak intensity for the 0° tilt sample of the Middle Plate when compared to the 45° tilt sample and 60° tilt sample respectively of the same plate. Whereas results for this work showed a 54% and 41% decrease in peak intensity of the 0° tilt sample of the Top Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. Energy Dispersive X-ray Spectroscopy was also performed

  14. Factors determining the efficiency of magnetron sputtering. Optimization criteria

    NASA Astrophysics Data System (ADS)

    Rogov, A. V.; Kapustin, Yu. V.; Martynenko, Yu. V.

    2015-02-01

    We report on the results of experimental study of the dependence of sputtering energy efficiency K w in a dc planar magnetron sputtering setup on the discharge power, working gas pressure, magnetic field, cathode erosion depth, and the structure of the gas puffing system and anode. We propose that this parameter be used for comparing the degree of perfection of the magnetron design irrespective of the magnetron size and structural features. The results of measurements of K w in sputtering of Al, Ti, Cr, Cu, Zn, Zr, Nb, Mo, Ag, In, Sn, Ta, W, Pt, and Au are considered. The optimization criterion is worked out for the magnetic system of the magnetron, which ensures the minimal working pressure and the maximal sputtering rate for the cathode. The results are analyzed theoretically.

  15. Effect of magnetic field strength on deposition rate and energy flux in a dc magnetron sputtering system

    SciTech Connect

    Ekpe, Samuel D.; Jimenez, Francisco J.; Field, David J.; Davis, Martin J.; Dew, Steven K.

    2009-11-15

    Variations in the magnetic field strongly affect the plasma parameters in a magnetron sputtering system. This in turn affects the throughput as well as the energy flux to the substrate. The variation in the magnetic field in this study, for a dc magnetron process, is achieved by shifting the magnet assembly slightly away from the target. Measurements of the plasma parameters show that while the electron density at the substrate increases with decrease in magnetic field, the electron temperature decreases. The cooling of the electron temperature is consistent with results reported elsewhere. The deposition rate per input magnetron power is found to increase slightly with the decrease in magnetic field for the process conditions considered in this study. Results suggest that the energy flux to the substrate tends to show a general decrease with the shift in the magnet assembly.

  16. Mechanical Characterization of CrN/CrAlN Multilayer Coatings Deposited by Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Kaouther, Khlifi; Hafedh, Dhiflaoui; Lassaad, Zoghlami; Ahmed, Ben Cheikh Larbi

    2015-10-01

    Chromium-based coatings are deposited on a 100Cr6 (AISI 52100) substrate by a physical vapor deposition magnetron sputtering system. The coatings have different structures, such as a CrN monolayer and CrAlN multilayer. The structural and morphological compositions of the coatings were evaluated using glow discharge optical emission spectroscopy, atomic force microscopy, and cross-sectional scanning electron microscopy. Nano-indentation tests were performed to investigate the mechanical properties. Domes and craters are shown to be uniformly distributed over the entire surfaces of the two coatings. Additionally, the CrN/CrAlN multilayer coating exhibits a rough surface, attractive mechanical properties, a high compressive stress, and a high plastic and elastic deformation resistance. The improvement of the mechanical properties of the CrN/CrAlN coating is mainly attributed to a reduction in the crystallite size. We found that this reduction was related to three factors: (1) the compositional change resulting from the substitution of aluminum for chromium, which can produce a decrease in the interatomic distance; (2) the structure of CrN/CrAlN, which was characterized by grain size refinement; and (3) the high number of interfaces, which explains the widely accepted concept of dislocation blocking by the layer interfaces.

  17. The target heating influence on the reactive magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Bondarenko, A.; Kolomiytsev, A.; Shapovalov, V.

    2016-07-01

    A physicochemical model for the reactive magnetron sputtering of a “hot” target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  18. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  19. Magnetron discharge sputtering for fabrication of nanogradient optical coatings

    NASA Astrophysics Data System (ADS)

    Volpian, O. D.; Kuzmichev, A. I.; Ermakov, G. F.; Krikunov, A. I.; Obod, Yu A.; Silin, N. V.; Shkatula, S. V.

    2015-11-01

    The technology of the middle frequency pulse reactive magnetron sputtering for fabrication of nanogradient optical coatings with smooth variation of refractive index was developed and studied. The technology is based on programmable motion of a substrate over two magnetrons with targets of different materials. The feature of the deposition process is a constant composition of reactive gas medium and an invariable magnetron operation mode. To realize this technology, an automatic computer-controlled sputtering system additionally comprising a gas discharge activator of reactive gas (oxygen) and an in situ optical monitor- spectrovisor has been built. The dielectric oxide-based nanogradient coatings of photon-barrier type were successfully fabricated. The obtained results confirm the high potential of the middle frequency pulse reactive magnetron sputtering of silicon and metal targets for fabrication of nanogradient dielectric optical coatings with excellent properties.

  20. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  1. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements

    SciTech Connect

    Arnalds, U. B.; Agustsson, J. S.; Ingason, A. S.; Eriksson, A. K.; Gylfason, K. B.; Gudmundsson, J. T.; Olafsson, S.

    2007-10-15

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks.

  2. A magnetron sputtering system for the preparation of patterned thin films and in situ thin film electrical resistance measurements.

    PubMed

    Arnalds, U B; Agustsson, J S; Ingason, A S; Eriksson, A K; Gylfason, K B; Gudmundsson, J T; Olafsson, S

    2007-10-01

    We describe a versatile three gun magnetron sputtering system with a custom made sample holder for in situ electrical resistance measurements, both during film growth and ambient changes on film electrical properties. The sample holder allows for the preparation of patterned thin film structures, using up to five different shadow masks without breaking vacuum. We show how the system is used to monitor the electrical resistance of thin metallic films during growth and to study the thermodynamics of hydrogen uptake in metallic thin films. Furthermore, we demonstrate the growth of thin film capacitors, where patterned films are created using shadow masks. PMID:17979429

  3. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  4. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  5. Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

    SciTech Connect

    Oks, Efim

    2009-05-01

    The plasma of a high power impulse magnetron sputtering system has been investigated using a time-of-flight spectrometer. The target materials included high sputter yield materials (Cu, Ag), transition metals (Nb, Cr, Ti), and carbon (graphite); the sputtering gases were argon, krypton, and nitrogen, and two different target thicknesses were selected to consider the role of the magnetic field strength. Measurements for selected combinations of those parameters give quantitative information on the transition from gas-dominated to metal-dominated (self-sputtering) plasma, on the fractions of ion charge states, and in the case of molecular gases, on the fraction of atomic and molecular ions.

  6. Evolution of the plasma composition of a high power impulse magnetron sputtering system studied with a time-of-flight spectrometer

    SciTech Connect

    Oks, Efim; Anders, Andre

    2008-12-31

    The plasma of a high power impulse magnetron sputtering (HiPIMS) system has been investigated using a time-of-flight (TOF) spectrometer. The target materials included high sputter yield materials (Cu, Ag), transition metals (Nb, Cr, Ti), and carbon (graphite); the sputtering gases were argon, krypton and nitrogen, and two different target thicknesses were selected to consider the role of the magnetic field strength. Measurements for selected combinations of those parameters give quantitative information on the transition from gas-dominated to metal-dominated (self-sputtering) plasma, on the fractions of ion charge states, and in the case of molecular gases, on the fraction of atomic and molecular ions.

  7. Analysis of DC magnetron sputtered beryllium films

    SciTech Connect

    Price, C.W.; Hsieh, E.J.; Lindsey, E.F.; Pierce, E.L.; Norberg, J.C.

    1988-10-01

    We are evaluating techniques that alter the columnar grain structure in sputtered beryllium films on fused silica substrates. The films are formed by DC magnetron sputtering, and the columnar structure, which is characteristic of this and most other deposition techniques, is highly detrimental to the tensile strength of the films. Attempts to modify the columnar structure by using RF-biased sputtering combined with nitrogen pulsing have been successful, and this paper describes the analyses of these films. Sputtered beryllium films are quite brittle, and the columnar structure in particular tends to form a distinct intergranular fracture; therefore, the grain structure was analyzed in fractured specimens using the high-resolution capability of a scanning electron microscope (SEM) equipped with a field emission gun (FESEM). Ion microanalysis using secondary-ion mass spectroscopy (SIMS) was conducted on some specimens to determining relative contamination levels introduced by nitrogen pulsing. The capability to perform quantitative SIMS analyses using ion-implanted specimens as standards also is being developed. This work confirms that the structure of DC magnetron sputtered beryllium can be improved significantly with combined nitrogen pulsing and RF-biased sputtering. 8 refs.

  8. Effects of an unbalanced magnetron in a unique dual-cathode, high rate reactive sputtering system

    NASA Technical Reports Server (NTRS)

    Rohde, S. L.; Petrov, I.; Sproul, W. D.; Barnett, S. A.; Rudnik, P. J.; Graham, M. E.

    1990-01-01

    Simple plasma and magnetic field measurements are presented to illustrate the opportunities afforded by using unbalanced magnetrons in a dual-cathode system. The system employs a pair of opposed cathodes, 38 cm x 13 cm, placed 27.5 cm apart, to coat specimens mounted on a rotational substrate holder. Comparisons are drawn between the original 'balanced' magnetron and several unbalanced configurations in terms of field strengths, deposition rates, etching characteristics, and substrate ion current densities for the growth of TiN films. The effects of 'unbalancing' on the nature of the plasma within the 3D geometry of the deposition chamber are elucidated via plasma probe and magnetic field studies performed under a variety of conditions. All the unbalanced configurations examined provided enhanced ion bombardment at the surface of the growing film. The closed-field or opposed magnet geometry resulted in a threefold or greater increase in current density when compared with that obtained using the corresponding mirrored geometry under the same conditions.

  9. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system.

    PubMed

    Joung, Yeun-Ho; Kang, Hyun Il; Kim, Jung Hyun; Lee, Hae-Seok; Lee, Jaehyung; Choi, Won Seok

    2012-01-01

    In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

  10. Comprehensive computer model for magnetron sputtering. II. Charged particle transport

    SciTech Connect

    Jimenez, Francisco J. Dew, Steven K.; Field, David J.

    2014-11-01

    Discharges for magnetron sputter thin film deposition systems involve complex plasmas that are sensitively dependent on magnetic field configuration and strength, working gas species and pressure, chamber geometry, and discharge power. The authors present a numerical formulation for the general solution of these plasmas as a component of a comprehensive simulation capability for planar magnetron sputtering. This is an extensible, fully three-dimensional model supporting realistic magnetic fields and is self-consistently solvable on a desktop computer. The plasma model features a hybrid approach involving a Monte Carlo treatment of energetic electrons and ions, along with a coupled fluid model for thermalized particles. Validation against a well-known one-dimensional system is presented. Various strategies for improving numerical stability are investigated as is the sensitivity of the solution to various model and process parameters. In particular, the effect of magnetic field, argon gas pressure, and discharge power are studied.

  11. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  12. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  13. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  14. Characterization of Magnetron Sputtered Coatings by Pulsed Eddy Current Techniques

    SciTech Connect

    Mulligan, Chris; Lee Changqing; Danon, Yaron

    2005-04-09

    A method that uses induced pulsed eddy currents for characterization of thick magnetron sputtered Nb coatings on steel is presented in this paper. The objectives of this work are to develop a system for rapid quantitative nondestructive inspection of coatings as well as to determine the correlation between coating properties, such as density and purity, and eddy current measured resistivity of coatings. A two-probe differential system having higher sensitivity and less noise than a one-probe system with 2-D scanning ability was developed.

  15. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  16. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  17. Magnetron sputtered boron films and Ti/B multilayer structures

    SciTech Connect

    Makowiecki, D.M.; Jankowski, A.F.

    1991-03-11

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

  18. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  19. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  20. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  1. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  2. DEPOSITION OF NIOBIUM AND OTHER SUPERCONDUCTING MATERIALS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING: CONCEPT AND FIRST RESULTS

    SciTech Connect

    High Current Electronics Institute, Tomsk, Russia; Anders, Andre; Mendelsberg, Rueben J.; Lim, Sunnie; Mentink, Matthijs; Slack, Jonathan L.; Wallig, Joseph G.; Nollau, Alexander V.; Yushkov, Georgy Yu.

    2011-07-24

    Niobium coatings on copper cavities have been considered as a cost-efficient replacement of bulk niobium RF cavities, however, coatings made by magnetron sputtering have not quite lived up to high expectations due to Q-slope and other issues. High power impulse magnetron sputtering (HIPIMS) is a promising emerging coatings technology which combines magnetron sputtering with a pulsed power approach. The magnetron is turned into a metal plasma source by using very high peak power density of ~ 1 kW/cm{sup 2}. In this contribution, the cavity coatings concept with HIPIMS is explained. A system with two cylindrical, movable magnetrons was set up with custom magnetrons small enough to be inserted into 1.3 GHz cavities. Preliminary data on niobium HIPIMS plasma and the resulting coatings are presented. The HIPIMS approach has the potential to be extended to film systems beyond niobium, including other superconducting materials and/or multilayer systems.

  3. Rotating cylindrical magnetron sputtering: Simulation of the reactive process

    SciTech Connect

    Depla, D.; Mahieu, S.; Van Aeken, K.; Leroy, W. P.; Haemers, J.; De Gryse, R.; Li, X. Y.; Bogaerts, A.

    2010-06-15

    A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

  4. Substrate heating and cooling during magnetron sputtering of copper target

    NASA Astrophysics Data System (ADS)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S.; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-01

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density.

  5. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  6. Magnetron sputtering for the production of EUV mask blanks

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

    2015-03-01

    Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

  7. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  8. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  9. A Plasma Lens for Magnetron Sputtering

    SciTech Connect

    Anders, Andre; Brown, Jeff

    2010-11-30

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  10. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    NASA Astrophysics Data System (ADS)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K.; Daniels, Stephen; Hopkins, M. B.

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  11. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    PubMed

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system. PMID:27131678

  12. Microstructure of microwave dielectricthin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Feng; Cui, Chuanwen

    2010-02-01

    The article describes the microstructure and morphological properties of microwave dielectric ceramic thin films. These thin films were successfully prepared on SiO 2 (1 1 0) single-crystal substrates by radio frequency magnetron-sputtering system. The microstructure and morphology of the thin films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The results show that the main phase is Ba 0.5Sr 0.5Nb 2O 6,which has a tetragonal perovskite structure, a long strip pattern, and uniform crystal-grain size of about 2-3 μm in length when annealed under 1150 °C for 30 min in an O 2 atmosphere. These thin films are of excellent crystallization quality, with a polycrystalline and dense structure.

  13. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    SciTech Connect

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  14. Very low pressure high power impulse triggered magnetron sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  15. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NASA Astrophysics Data System (ADS)

    van Hattum, E. D.

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, where the SiOx layer is used as the charge retention layer on the drums for copying and printing devices. The thesis describes investigations of the plasma and of processes taking place on the sputter target and on the SiOx growth surface in the room temperature, RF reactive magnetron plasma sputter deposition technology. The sputtering target consists of silicon and the reactive atmosphere consists of an Ar/O2 mixture. The composition of the grown SiOx layers has been varied between x=0 and x=2 by variation of the O2 partial pressure. The characteristics of the growth process have been related to the nanostructural properties of the grown films. The deposition system enables the characterisation of the plasma (Langmuir probe, energy resolved mass spectrometer) and of the growing film (Elastic Recoil Detection (ERD), Fourier transform infrared absorption spectroscopy) and is connected to a beamline of a 6MV tandem van de Graaff accelerator. Also Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy have been applied. It is shown how ERD can be used as a real-time in-situ technique. The thesis presents spatially resolved values of the ion density, electron temperature and the quasi-electrostatic potential, determined using a Langmuir probe. The plasma potential has a maximum about 2 cm from the cathode erosion area, and decreases (more than 200 V typically) towards the floating sputter cathode. The potential decreases slightly in the direction towards the grounded growth surface and the positive, mainly Ar+, ions created in the large volume of the plasma closest to the substrate are accelerated towards the growth surface. These ions obtain a few eV of

  16. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications.

    PubMed

    Marot, L; De Temmerman, G; Oelhafen, P; Covarel, G; Litnovsky, A

    2007-10-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 microm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper. PMID:17979419

  17. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    SciTech Connect

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-10-15

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 {mu}m were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper.

  18. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    SciTech Connect

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  19. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    SciTech Connect

    Anders, Andre

    2010-07-15

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  20. Magnetron Sputtering Deposits Corrosion-Resistant Alloy

    NASA Technical Reports Server (NTRS)

    Khanna, S. K.; Thakoor, A. P.; Williams, R. M.

    1986-01-01

    Dense, amorphous, metallic film resists corrosion attack by acid. Coatings thermally stable up to 800 degrees C and made corrosion resistant by proper choice of sputtering deposition conditions. Protective, corrosionresistant coatings applied to process equipment that comes in contact with aqueous, neutral, or acidic solutions in chemical, petroleum, and paper industries, in wastewater treatment, and in heat exchangers.

  1. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  2. Lateral variation of target poisoning during reactive magnetron sputtering

    SciTech Connect

    Guettler, D.; Groetzschel, R.; Moeller, W.

    2007-06-25

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar/N{sub 2} atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  3. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  4. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  5. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  6. Optical properties of magnetron-sputtered and rolled aluminum

    SciTech Connect

    Van Gils, S.; Dimogerontakis, Th.; Buytaert, G.; Stijns, E.; Terryn, H.; Skeldon, P.; Thompson, G.E.; Alexander, M.R.

    2005-10-15

    The optical properties of magnetron-sputtered aluminum and AA1050 aluminum alloy sheet have been examined qualitatively using total reflectance and quantitatively by means of visible spectroscopic ellipsometry (VISSE). Significant changes in reflectance and optical constants are observed, which are related to the incorporation of oxide in the aluminum bulk. The role of such oxide was determined by VISSE using the Bruggeman effective-medium approximation, with the findings validated by x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy.

  7. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  8. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current. PMID:22380320

  9. Hollow target magnetron-sputter-type solid material ion source

    SciTech Connect

    Sasaki, D.; Ieki, S.; Kasuya, T.; Wada, M.

    2012-02-15

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al{sup +} and Ar{sup +} ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 {mu}A, with the Al{sup +} ion beam occupying 30% of the total beam current.

  10. Characterisation of Mg biodegradable stents produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Elmrabet, N.; Botterill, N.; Grant, D. M.; Brown, P. D.

    2015-10-01

    Novel Mg-minitubes for biodegradable stent applications have been produced using PVD magnetron sputtering. The minitubes were characterised, as a function of annealing temperature, using a combination of SEM/EDS, XRD and hardness testing. The as-deposited minitubes exhibited columnar grain structures with high levels of porosity. Slight alteration to the crystal structure from columnar to equiaxed grain growth was demonstrated at elevated temperature, along with increased material densification, hardness and corrosion resistance.

  11. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  12. Particle contamination formation and detection in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Weiss, C.A.; Sequeda, F.; Huang, C.

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  13. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  14. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  15. Highly conducting ZnSe films by reactive magnetron sputtering

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.

    1986-01-01

    This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

  16. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  17. Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2016-04-01

    Diamond-like carbon films were prepared using a reactive Ar/CH4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp3/(C-C sp2 + C-C sp3) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.

  18. The bioactivity mechanism of magnetron sputtered bioglass thin films

    NASA Astrophysics Data System (ADS)

    Berbecaru, C.; Stan, G. E.; Pina, S.; Tulyaganov, D. U.; Ferreira, J. M. F.

    2012-10-01

    Smooth and adherent bioactive coatings with ∼0.5 μm thickness were deposited onto Si substrates by the radiofrequency-magnetron sputtering method at 150 °C under 0.4 Pa of Ar atmosphere using a bioglass powder as target with a composition in the SiO2-CaO-MgO-P2O5-CaF2-B2O3-Na2O system. The bioactivity of the as-prepared bioglass samples was assessed by immersion in simulated body fluid for different periods of time up to 30 days. Grazing incidence X-ray diffraction, Fourier transform infra-red spectrometry and energy dispersive spectroscopy revealed that important structural and compositional changes took place upon immersing the samples in SBF. Whilst the excellent biomineralisation capability of the BG thin films was demonstrated by the in vitro induction of extensive and homogenous crystalline hydroxyapatite in-growths on their surfaces, a series of bioactivity process kinetics peculiarities (derogations from the classical model) were emphasised and thoroughly discussed.

  19. Study on the influence of nitrogen on titanium nitride in a dc post magnetron sputtering plasma system

    NASA Astrophysics Data System (ADS)

    Moni Borah, Sankar; Bailung, Heremba; Ratan Pal, Arup; Chutia, Joyanti

    2008-10-01

    The characteristics of direct current (dc) glow discharge plasma have been studied in a post magnetron device with an argon and nitrogen gas mixture. The introduction of nitrogen modifies the discharge leading to modifications of plasma parameters, transport mechanism and the cathode sheath. The electron energy distribution function, density and temperature profile are measured to characterize the discharge. Measured plasma potential profiles show the modification of the structure of the cathode sheath and confinement space variation. Optical emission spectroscopy is used to identify prominent transitions of the different species in the discharge. The discharge mode in argon undergoes a transition from metallic mode to reactive mode when nitrogen concentration exceeds argon.

  20. Liner conformality in ionized magnetron sputter metal deposition processes

    SciTech Connect

    Hamaguchi, S.; Rossnagel, S.M.

    1996-07-01

    The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ionized magnetron sputter deposition processes is studied numerically and experimentally. The numerical simulator (SHADE) used to predict the surface topography is based on the shock-tracking method for surface evolution. The simulation results are in good agreement with experimentally observed thin-film topography. It is shown that combination of direct deposition and trench-bottom resputtering results in good conformality of step coverages and the amount of the resputtering needed for the good conformality is almost independent of trench aspect ratios. {copyright} {ital 1996 American Vacuum Society}

  1. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    SciTech Connect

    Crăciunescu, Corneliu M. Mitelea, Ion Budău, Victor; Ercuţa, Aurel

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  2. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Crǎciunescu, Corneliu M.; Mitelea, Ion; Budǎu, Victor; ErcuÅ£a, Aurel

    2014-11-01

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  3. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  4. Full-Scale 3D Simulation of a sputtering magnetron

    NASA Astrophysics Data System (ADS)

    Walton, C. C.; Wilks, S. C.; Ayyaswamy, V.; Verboncoeur, J. P.; Parks, P. B.; Wu, W.; Zhou, C. D.; Stoltz, P. H.

    2010-11-01

    PIC simulations have been used to study ion energy distributions in magnetron plasmas, and coupled with other simulations to relate plasma processes to properties of sputtered films. The plasma is weakly ionized and exchanges heat with the background gas by scattering and charge-exchange reactions. Resulting heating of neutral background gas up to ˜1200K, leading to ˜5X rarefaction and increased plasma impedance, was studied with coupled PIC and Direct Simulation Monte Carlo (DSMC) simulations. Effects of scaling the PIC simulations from 0.1X to 1X physical size, and modifying the plasma potential by a dc substrate bias, will be presented. Comparison to experimental I-V relations and importance for roughness and density of sputtered films will be discussed.

  5. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    SciTech Connect

    Sahu, B. B. Han, Jeon G.; Kim, Hye R.; Ishikawa, K.; Hori, M.

    2015-01-21

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons.

  6. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  7. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    SciTech Connect

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K.; Shaw, Pankaj Kumar; Sekar Iyengar, A. N.

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  8. Double circular erosion patterns on dielectric target in magnetron sputtering.

    PubMed

    Suzaki, Yoshifumi; Miyagawa, Hayato; Ejima, Seiki

    2009-10-01

    In rf magnetron sputtering, a circular erosion pattern forms on the surface of a circular metal conductor target with permanent magnets on its back. In this case, the theory behind the erosion pattern has been established. However, in the case of a dielectric target, a double circular erosion pattern is formed. So far, this pattern has been phenomenologically recognized by experimenters; however, it has not yet been investigated. In this study, we performed a magnetron sputtering experiment with a SiO2 dielectric target, and confirmed the formation of a double circular erosion pattern. The dimensions of the double circular erosion pattern varied depending on the insulation resistance or the thickness of the SiO2 target. Furthermore, we found that the dimensions of a double circular erosion pattern changed by making a gap between the SiO2 target and guard ring. Based on the experimental results, we have proposed a qualitative model to explain the formation mechanism of double circular erosion patterns. PMID:19895082

  9. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-03-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  10. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  11. Plasma"anti-assistance" and"self-assistance" to high power impulse magnetron sputtering

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-30

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contra-productive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  12. Direct-current magnetron sputtering for optical coatings

    NASA Astrophysics Data System (ADS)

    Lagana, Paolo; Misiano, Carlo; Simonetti, Enrico

    1994-09-01

    The advantages of optical coatings realized by Sputtering versus thermal evaporation by crucible or Electron Gun, are very well known, but this technique is used only partially for dielectric coatings despite of a wide use in semiconductors and microcircuits, due to the slowness of RF Sputtering processes when starting from dielectric targets. This paper describes a DC Reactive Magnetron Sputtering technique from metal target set up at Ce.Te.V. for deposition of multilayer coatings, with cycle times comparable-or even faster-than conventional solution. The advantages of this process consist in obtaining films with high optical and mechanical performances with high repeatability on room temperature substrates. Pumping cycle can thus be faster and dead time for substrates heating and cooling down can be avoided, characteristics which plastic substrates can particularly take advantage of. Performances of the realized coatings on glass and plastic substrates, together with cycle time and material costs, are finally compared to results obtainable by Electron Beam Gun Reactive Deposition.

  13. Tailoring of antibacterial Ag nanostructures on TiO2 nanotube layers by magnetron sputtering.

    PubMed

    Uhm, Soo-Hyuk; Song, Doo-Hoon; Kwon, Jae-Sung; Lee, Sang-Bae; Han, Jeon-Geon; Kim, Kyoung-Nam

    2014-04-01

    To reduce the incidence of postsurgical bacterial infection that may cause implantation failure at the implant-bone interface, surface treatment of titanium implants with antibiotic materials such as silver (Ag) has been proposed. The purpose of this work was to create TiO2 nanotubes using plasma electrolytic oxidation (PEO), followed by formation of an antibacterial Ag nanostructure coating on the TiO2 nanotube layer using a magnetron sputtering system. PEO was performed on commercially pure Ti sheets. The Ag nanostructure was added onto the resulting TiO2 nanotube using magnetron sputtering at varying deposition rates. Field emission scanning electron microscopy and transmission electron microscopy were used to characterize the surface, and Ag content on the TiO2 nanotube layer was analyzed by X-ray diffraction and X-ray photoelectron spectroscopy. Scanning probe microscopy for surface roughness and contact angle measurement were used to indirectly confirm enhanced TiO2 nanotube hydrophilicity. Antibacterial activity of Ag ions in solution was determined by inductively coupled plasma mass spectrometry and antibacterial testing against Staphylococcus aureus (S. aureus). In vitro, TiO2 nanotubes coated with sputtered Ag resulted in significantly reduced S. aureus. Cell viability assays showed no toxicity for the lowest sputtering time group in the osteoblastic cell line MC3T3-E1. These results suggest that a multinanostructured layer with a biocompatible TiO2 nanotube and antimicrobial Ag coating is a promising biomaterial that can be tailored with magnetron sputtering for optimal performance. PMID:24123999

  14. In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Cheng; Chang, Chia-Chiang; Wu, Chin-Jyi; Tseng, Zong-Liang; Tang, Jian-Fu; Chu, Sheng-Yuan; Chen, Yi-Chun; Qi, Xiaoding

    2013-03-01

    Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

  15. Determination of ionization fraction and plasma potential in a dc magnetron sputtering system using a quartz crystal microbalance and a gridded energy analyzer

    SciTech Connect

    Green, K.M.

    1997-01-01

    A diagnostic which combines a quartz crystal microbalance and a gridded energy analyzer has been developed to measure the ion-to- neutral ratio and the plasma potential in a commercial dc magnetron sputtering device. Additional features of this sensor include an externally controlled shutter which protects the diagnostic when it is in the chamber, but it is not in use. The diagnostic is mounted on a linear motion feedthrough and embedded in a slot in the wafer chuck to allow for measuring uniformity in deposition and ionization throughout the plane of the wafer. RF power is introduced to ionize the Al particles. Using the quartz crystal microbalance and the gridded energy analyzer, the ion-to-neutral ratio and other parameters are determined. Comparing the total deposition rate with and without a bias that screens out the ions, but leaves the plasma undisturbed, allows for the determination of the ion-to-neutral ratio. By varying the voltage applied to the grids, the plasma potential is measured. For example, a magnetron configuration having a pressure of 35 mtorr, a dc power of 2 kW, and a net rf power of 310{+-}5 W yielded 78{+-}5% ionization and a plasma potential of 35{+-}1 V.

  16. RF magnetron sputtering of thick platinum coatings on glass microspheres

    SciTech Connect

    Meyer, S.F.; Hsieh, E.J.; Burt, R.J.

    1980-05-28

    Thick platinum coatings on glass microspheres are needed for proposed Laser Fusion targets. The spherical nature of these substrates coupled with the small dimensions (approx. 100 ..mu..m OD) make it difficult to achieve a smooth and uniform coating. Coating problems encountered include a rough surface and porous microstructure from the oblique incidence and lack of temperature and bias control, clumping of the microspheres causing non-uniformities, and particle accumulation causing cone defects. Sputtering parameters significantly affecting the coatings include total pressure, DC substrate bias, and the addition of doping gases. Using an ultrasonic vibrating screened cage and RF magnetron Sputtergun, we have successfully batch coated microspheres with up to 6 ..mu..m of Pt, with a surface roughness of 200 nm, thickness non-concentricity of 300 nm, and density greater than 98% of bulk Pt.

  17. Influence of RF power on magnetron sputtered AZO films

    SciTech Connect

    Agarwal, Mohit; Modi, Pankaj; Dusane, R. O.

    2013-02-05

    Al-doped Zinc Oxide (AZO) transparent conducting films are prepared on glass substrate by RF magnetron sputtering under different RF power with a 3 inch diameter target of 2 wt%Al{sub 2}O{sub 3} in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement and UV-Visible spectrophotometry. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance (<90%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 5.7 Multiplication-Sign 10{sup -4}{omega}cm. Such low-resistivity and high-transmittance AZO films when prepared using low RF power at room temperature could find important applications in flexible electronics.

  18. Characterization on RF magnetron sputtered niobium pentoxide thin films

    SciTech Connect

    Usha, N.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Niobium pentoxide (Nb{sub 2}O{sub 5}) thin films with amorphous nature were deposited on microscopic glass substrates at 100°C by rf magnetron sputtering technique. The effect of rf power on the structural, morphological, optical, and vibrational properties of Nb{sub 2}O{sub 5} films have been investigated. Optical study shows the maximum average transmittance of about 87% and the optical energy band gap (indirect allowed) changes between 3.70 eV and 3.47 eV. AFM result indicates the smooth surface nature of the samples. Photoluminescence measurement showed the better optical quality of the deposited films. Raman spectra show the LO-TO splitting of Nb-O stretching of Nb{sub 2}O{sub 5} films.

  19. Combined optical emission and resonant absorption diagnostics of an Ar-O2-Ce-reactive magnetron sputtering discharge

    NASA Astrophysics Data System (ADS)

    El Mel, A. A.; Ershov, S.; Britun, N.; Ricard, A.; Konstantinidis, S.; Snyders, R.

    2015-01-01

    We report the results on combined optical characterization of Ar-O2-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O2 content, etc. The absolute number density of the Arm is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Arm by O2 molecules at different oxygen contents. Quantitatively, the absolute number density of Arm is found to be equal to ≈ 3 × 108 cm- 3 in the metallic, and ≈ 5 × 107 cm- 3 in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime.

  20. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    SciTech Connect

    Dhivya, P.; Prasad, A.K.; Sridharan, M.

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  1. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2011-12-20

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for pulse length of 100 μs at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were taken with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target’s racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic pre-sheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons’ E×B drift velocity, which is about 105 m/s and shows structures in space and time.

  2. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2012-04-15

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for a pulse length of 100 {mu}s at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were recorded with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target's racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic presheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons'ExB drift velocity, which is about 10{sup 5} m/s and shows structures in space and time.

  3. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  4. Magnetron sputtered WS2; optical and structural analysis

    NASA Astrophysics Data System (ADS)

    Koçak, Y.; Akaltun, Y.; Gür, Emre

    2016-04-01

    Remarkable properties of graphene have renewed interest in inorganic, Transition Metal Dichalgogenits (TMDC) due to unique electronic and optical properties. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as solar cells, transistors, photodetectors and electroluminescent devices in which the graphene is not actively used. So, fabrication and analysis of these films are important for new generation devices. In this work, polycrystalline WS2 films were grown by radio frequency magnetron sputtering (RFMS) on different substrates like n-Si(100), n-Si(111), p-Si(100), glass and fused silica. Structural, morphological, optical and electrical properties were investigated as a function of film thickness and RF power. From XRD analysis, signals from planes of (002), (100), (101), (110), (008) belong to the hegzagonal WS2 were obtained. Raman spectra of the WS2 show that there are two dominant peaks at ~351 cm-1 (in-plane phonon mode) and ~417 cm-1 (out-of-plane phonon mode). XPS analysis of the films has shown that binding energy and the intensity of tungsten 4f shells shifts by depending on the depth of the films which might be due to the wellknown preferential sputtering.

  5. Magnetron sputtering as a method of thin-film catalyst development for electrochemical sensors

    NASA Astrophysics Data System (ADS)

    Medvedeva, E. A.

    2016-07-01

    The aim of this work was to develop a thin-film Pt/C catalyst on the fluoroplastic substrates by means of the magnetron sputtering method in order to use as reference and working electrodes of electrochemical cells.

  6. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    NASA Astrophysics Data System (ADS)

    Chudinova, E.; Surmeneva, M.; Koptioug, A.; Scoglund, P.; Surmenev, R.

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds.

  7. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  8. Tribological evaluation of magnetron-sputtered coating for military applications. Final report, November 1994--March 1997

    SciTech Connect

    Beatty, J.H.; Huang, P.J.; Fountzoulas, C.G.; Kelly, J.V.

    1999-02-01

    There is a continuing requirement for high-performance tribological coatings in both commercial and military applications. To maximize system performance, corresponding improvements in wear resistance, high-temperature stability, Corrosion behavior, and bearing durability must be realized. In the ongoing study, a number of different coatings were applied to 52100 bearing steel, 4340 steel, Inconel 718, and Ti-6Al-4V to improve wear characteristics, corrosion resistance, and rolling contact fatigue behavior. This report deals with CrN, TiN, W, and Ta coatings deposited by magnetron sputtering. Data on corrosion, Falex annular wear, ball-on-disk, and rolling contact fatigue are presented.

  9. Venting temperature determines surface chemistry of magnetron sputtered TiN films

    NASA Astrophysics Data System (ADS)

    Greczynski, G.; Mráz, S.; Hultman, L.; Schneider, J. M.

    2016-01-01

    Surface properties of refractory ceramic transition metal nitride thin films grown by magnetron sputtering are essential for resistance towards oxidation necessary in all modern applications. Here, typically neglected factors, including exposure to residual process gases following the growth and the venting temperature Tv, each affecting the surface chemistry, are addressed. It is demonstrated for the TiN model materials system that Tv has a substantial effect on the composition and thickness-evolution of the reacted surface layer and should therefore be reported. The phenomena are also shown to have impact on the reliable surface characterization by x-ray photoelectron spectroscopy.

  10. A Semi-Empirical Model for Tilted-Gun Planar Magnetron Sputtering Accounting for Chimney Shadowing

    NASA Astrophysics Data System (ADS)

    Bunn, J. K.; Metting, C. J.; Hattrick-Simpers, J.

    2015-01-01

    Integrated computational materials engineering (ICME) approaches to composition and thickness profiles of sputtered thin-film samples are the key to expediting materials exploration for these materials. Here, an ICME-based semi-empirical approach to modeling the thickness of thin-film samples deposited via magnetron sputtering is developed. Using Yamamura's dimensionless differential angular sputtering yield and a measured deposition rate at a point in space for a single experimental condition, the model predicts the deposition profile from planar DC sputtering sources. The model includes corrections for off-center, tilted gun geometries as well as shadowing effects from gun chimneys used in most state-of-the-art sputtering systems. The modeling algorithm was validated by comparing its results with experimental deposition rates obtained from a sputtering system utilizing sources with a multi-piece chimney assembly that consists of a lower ground shield and a removable gas chimney. Simulations were performed for gun-tilts ranging from 0° to 31.3° from the vertical with and without the gas chimney installed. The results for the predicted and experimental angular dependence of the sputtering deposition rate were found to have an average magnitude of relative error of for a 0°-31.3° gun-tilt range without the gas chimney, and for a 17.7°-31.3° gun-tilt range with the gas chimney. The continuum nature of the model renders this approach reverse-optimizable, providing a rapid tool for assisting in the understanding of the synthesis-composition-property space of novel materials.

  11. : comparison between magnetron sputtering and sol-gel synthesis

    NASA Astrophysics Data System (ADS)

    Cosentino, S.; Knebel, S.; Mirabella, S.; Gibilisco, S.; Simone, F.; Bracht, H.; Wilde, G.; Terrasi, A.

    2014-07-01

    SiGeO films have been produced by a sol-gel derived approach and by magnetron sputtering deposition. Post-thermal annealing of SiGeO films in forming gas or nitrogen atmosphere between 600 and 900 °C ensured the phase separation of the SiGeO films and synthesis and growth of Ge nanoclusters (NCs) embedded in SiO2. Rutherford backscattering spectrometry analysis evidenced a similar Ge concentration (~12 %), but a different Ge out-diffusion after annealing between the two types of techniques with the formation of a pure SiO2 surface layer (~30 nm thick) in sol-gel samples. The thermal evolution of Ge NCs has been followed by transmission electron microscopy and Raman analysis. In both samples, Ge NCs form with similar size increase (from ~3 up to ~7 nm) and with a concomitant amorphous to crystalline transition in the 600-800 °C temperature range. Despite a similar Ge concentration, a significant lower NCs density is observed in sol-gel samples attributed to an incomplete precipitation of Ge, which probably remains still dispersed in the matrix. The optical absorption of Ge NCs has been measured by spectrophotometry analyses. Ge NCs produced by the sol-gel method evidence an optical band gap of around 2 eV, larger than that of NCs produced by sputtering (~1.5 eV). These data are presented and discussed also considering the promising implications of a low-cost sol-gel based technique towards the fabrication of light harvesting devices based on Ge nanostructures.

  12. Ion beam analysis and co-sputtering simulation (CO-SS) of bi-metal films produced by magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Cruz, J.; Andrade, E.; Muhl, S.; Canto, C.; de Lucio, O.; Chávez, E.; Rocha, M. F.; Garcés-Medina, E.

    2016-03-01

    Magnetron sputtering is widely used to deposit thin films on different types of substrates. An important application of this method is to make multicomponent thin films using co-sputtering, where two or more elements are included in the target. The thickness and elemental composition of the films depend on the experimental parameters used, the system geometry and the spatial distribution of the elements in the target. If the target is made of two spatially separate pieces of the materials, then the composition of the deposit depends on a combination of the relative areas, the sputtering yield and the angular distribution of the emission of the sputtered flux of each material. In this work, a co-sputtering simulation program, known as CO-SS, was developed to simulate the thickness and composition of metal films produced by DC magnetron sputtering (Al) and co-sputtering (Al + Ti). The CO-SS code models the angular distribution of particles ejected by sputtering from the target, where this is assumed to vary as cosn β , where n is a free parameter and β is the angle of ejection relative to the normal to the surface of the target, and the sputtering yield of each material. The program also takes into account other geometry factors such as the distance between the target and the substrate, and the size of the substrate. Rutherford backscattering (RBS) using 4He was employed to measure the thickness and the composition of the films deposited on glass cover slides in order to assess the CO-SS program. The film thickness was also measured by profilometry. The CO-SS code was found to accurately model the experimental results for both the Al and Ti/Al films. The CO-SS code is freely available for use from http://demonstrations.wolfram.com/CoSputteringSimulationCOSS/.

  13. CdS Film Thickness Characterization By R. F. Magnetron Sputtering

    SciTech Connect

    Hashim, Uda; Rahman, Kasim Abdul

    2009-06-01

    In this work, cadmium sulphide (CdS) target with 99.999% purity was used as a target in RF magnetron sputtering. The sputtering experiment was conducted onto silicon oxide substrates at different temperatures ranging from 200 deg. C to 400 deg. C in 50 deg. C steps, using a capacitive coupled magnetron cathode with 13.65 MHz that at higher magnetron power. After all investigations, it was concluded that 300 deg. C substrate temperature is suitable for producing CdS films on silicon wafer with RF magnetron sputtering and the examined properties (good crystallinity and low resistivity) of this film show its feasibility for technological purposes, especially for light sensor cells.

  14. Photocatalytic activity of nanosized TiO2 thin film prepared by magnetron sputtering method.

    PubMed

    Kang, Sang-Jun; Kim, Ki-Joong; Chung, Min-Chul; Jung, Sang-Chul; Boo, Su-Il; Cho, Soon Kye; Jeong, Woon-Jo; Ahn, Ho-Geun

    2011-02-01

    Nanosized TiO2 thin film on the substrate such as stainless steel plate and slide glass film were prepared by magnetron sputtering method, and these TiO2 thin films were characterized by field emission-scanning electron microscopy (FE-SEM). Photocatalytic activity for Methyl-ethyl-ketone (MEK) and acetaldehyde were measured using a closed circulating reaction system through the various ultra violet (UV) sources. From the results of SEM images, nanosized TiO2 thin film was uniformly coated on slide glass, ranging from 360 nm to 370 nm. Photocatalytic activity of MEK over TiO2 thin film on stainless steel plate did not occur by UV-A irradiation, but was efficiently decomposed by UV-B and UV-C. Also, acetaldehyde could be decomposed than MEK. The effect of sputtering conditions on their structure and photocatalytic activities were investigated in detail. PMID:21456269

  15. Modification of film structure by plasma potential control using triode high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nakano, Takeo; Umahashi, Takuya; Baba, Shigeru

    2014-02-01

    We have designed a new triode configuration in a magnetron sputtering apparatus to control the plasma potential of the discharge. An additional chimney electrode was introduced above the conventional sputter gun to apply a positive voltage. The discharge power was provided by a pulse power source to achieve high power pulsed magnetron sputtering operation. We confirmed that the plasma potential increased with increasing positive electrode voltage. Copper films with substantially flatter surfaces could be obtained on a water-cooled and electrically grounded substrate at an Ar gas pressure of 5 Pa.

  16. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-05-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  17. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  18. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface. PMID:20355462

  19. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Weiß, V.; Rossner, H.

    2001-07-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3° and 10°, is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  20. Integration of in situ RHEED with magnetron sputter deposition for atomic layer controlled growth

    NASA Astrophysics Data System (ADS)

    Podkaminer, Jacob P.

    Epitaxial thin films continue to be one of the most promising topics within electronic materials research. Sputter deposition is one process by which these films can be formed and is a widely used growth technique for a large range of technologically important material systems. Epitaxial films of carbides, nitrides, metals, oxides and more can all be formed during the sputter process which offers the ability to deposit smooth and uniform films from the research level up to an industrial scale. This tunable kinematic deposition process excels in easily adapting for a large range of environments and growth procedures. Despite the vast advantages associated with sputter deposition, there is a significant lack of in situ analysis options during sputtering. In particular, the area of real time atomic layer control is severely deficient. Atomic layer controlled growth of epitaxial thin films and artificially layered superlattices is critical for both understanding their emergent phenomena and engineering novel material systems and devices. Reflection high-energy electron diffraction (RHEED) is one of the most common in situ analysis techniques during thin film deposition that is rarely used during sputtering due to the strong permanent magnets in magnetron sputter sources and their effect on the RHEED electron beam. In this work we have solved this problem and designed a novel way to deter the effect of the magnets for a wide range of growth geometries and demonstrate the ability for the first time to have layer by layer control during sputter deposition by in situ RHEED. A novel growth chamber that can seamlessly change between pulsed laser deposition and sputtering with RHEED for the growth of complex heterostructures has been designed and implemented. Epitaxial thin films of LaAlO3, La1-xSrxMnO3, and SrRuO3 have all been deposited by sputtering and shown to exhibit clear and extended RHEED oscillations. To solve the magnet issue, a finite element model has been

  1. Characterization of high power impulse magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  2. Magnetron Sputtering of Gold Nanoparticles onto WO3 and Activated Carbon

    SciTech Connect

    Veith, Gabriel M; Lupini, Andrew R; Pennycook, Stephen J; Villa, Alberto; Prati, Laura; Dudney, Nancy J

    2007-01-01

    In this paper we describe the production and investigation of two supported gold catalyst systems prepared by magnetron sputtering: Au on WO3 and Au on activated carbon. The magnetron sputtering technique entails the sputtering of a high purity gold metal target, with an argon plasma, to produce a flux of gold atoms onto a constantly tumbling support material. This technique offers a number of advantages over conventional chemical preparation methods including the flexibility to create gold nanoparticles (diameters < 3 nm) on unusual support materials, such as WO3 and carbon, which are generally not accessible using the ubiquitous deposition-precipitation technique. We present data demonstrating the formation of catalytic gold nanoparticles with average diameters of 1.7 nm (Au/C) and 2.1 nm (Au/WO3) as well as a substantial number of single atom species on the Au/C sample. Prototypical carbon monoxide oxidation (Au/WO3) and glycerol oxidation (Au/C) reactions were performed in order to gauge the activity of these catalysts. The WO3 supported catalyst exhibits substantial catalytic activity from room temperature to 135oC (0.0018 - 0.082 mole CO/mole Au sec) with an apparent transition around 75oC to a more active catalyst. The activity 1 of the Au/C catalysts was compared to a Au/C catalysts prepared from a PVA sol. The smaller catalysts prepared by sputtering are more active than the large gold particles prepared using the PVA sol. However, the larger gold catalyst are substaintially more selective towards the production of intermediate products from the oxidation of glycerol.

  3. Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Niu, Jian-wen; Ma, Rui-xin; Wang, Yuan-yuan; Li, Shi-na; Cheng, Shi-yao; Liu, Zi-lin

    2014-09-01

    Amorphous indium-gallium-zinc oxide (IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency (RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.

  4. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    SciTech Connect

    Högberg, Hans Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars; Samuelsson, Mattias

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  5. Tribological Properties of CrN/AlN Films Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Rojo, A.; Solís, J.; Oseguera, J.; Salas, O.; Reichelt, R.

    2010-04-01

    The microstructure of CrN/AlN films, prepared by reactive magnetron sputtering under various conditions, was analyzed and related to the wear behavior of the films. One set of films was prepared by conventional reactive magnetron sputtering, a second set adding an extra amount of reactive gas to the initial Ar + N2 mixture and a third set adding an extra source of nitrogen near the substrate during sputtering. The samples were analyzed by scanning electron microscopy + energy dispersive microanalysis, high resolution scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results of the microstructural analysis revealed a clear difference in the morphology growth of the films when extra nitrogen was used compared to the conventionally prepared films. Formation of CrN was significantly faster than that of AlN. The most effective method to produce AlN was to introduce extra nitrogen. Pin-on-disk wear experiments were carried out in ambient air, to investigate the tribological behavior of the CrN/AlN system against a steel ball under dry conditions for various loads and a constant sliding speed. The results revealed that tribological properties of the layers improved unlike those of the untreated H13 steel. The friction behavior is closely related to the structure of the deposited films. The thicker CrN layer contributed to the higher load capacity of the coated steel when compared to the unmodified steel. However, wear life for the coating system was very short, denoted by the fairly poor adhesion of the film system to the steel substrate.

  6. Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

    NASA Technical Reports Server (NTRS)

    Thornton, J. A.; Lamb, J. L.

    1984-01-01

    Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

  7. Development of mid-frequency AC reactive magnetron sputtering for fast deposition of Y2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Xiong, Jie; Xia, Yudong; Xue, Yan; Zhang, Fei; Guo, Pei; Zhao, Xiaohui; Tao, Bowan

    2014-02-01

    A reel-to-reel magnetron sputtering system with mid-frequency alternating current (AC) power supply was used to deposit double-sided Y2O3 seed layer on biaxially textured Ni-5 at.%W tape for YBa2Cu3O7-δ coated conductors. A reactive sputtering process was carried out using two opposite symmetrical sputtering guns with metallic yttrium targets and water vapor for oxidizing the sputtered metallic atoms. The voltage control mode of the power supply was used and the influence of the cathode voltage and ArH2 pressure were systematically investigated. Subsequently yttrium-stabilized zirconia (YSZ) barrier and CeO2 cap layers were deposited on the Y2O3 buffered substrates in sequence, indicating high quality and uniform double-sided structure and surface morphology of such the architecture.

  8. Solar system sputtering

    NASA Technical Reports Server (NTRS)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  9. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  10. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  11. Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

    SciTech Connect

    Telling, N. D.; Laan, G. van der; Georgieva, M. T.; Farley, N. R. S.

    2006-07-15

    An ultrahigh vacuum chamber that enables the in situ growth of thin films and multilayers by magnetron sputtering techniques is described. Following film preparation, x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements are performed by utilizing an in vacuum electromagnet. XMCD measurements on sputtered thin films of Fe and Co yield spin and orbital moments that are consistent with those obtained previously on films measured in transmission geometry and grown in situ by evaporation methods. Thin films of FeN prepared by reactive sputtering are also examined and reveal an apparent enhancement in the orbital moment for low N content samples. The advantages of producing samples for in situ XAS and XMCD studies by magnetron sputtering are discussed.

  12. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    SciTech Connect

    Gudmundsson, J. T.; Lundin, D.; Minea, T. M.; Stancu, G. D.; Brenning, N.

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  13. Monte Carlo simulation of the transport of atoms in DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mahieu, S.; Buyle, G.; Depla, D.; Heirwegh, S.; Ghekiere, P.; De Gryse, R.

    2006-02-01

    In this work, we present a Monte Carlo simulation for the transport of sputtered particles during DC magnetron sputter deposition through the gas phase. The nascent sputter flux has been simulated by SRIM and TRIM, while the collisions of the sputtered atoms with the sputter gas are simulated with a screened Coulomb potential, with the Molière screening function and the Firsov screening length. The model calculates the flux of the atoms arriving at the substrate, their energy, direction and number of collisions they underwent. The model was verified by comparing the simulated thickness profiles with experimental profiles of deposited layers of Al, Cu and Zr/Y (85/15 wt%) on large substrates (ratio of the substrate diameter to the target diameter is 8). A good agreement between the experimental data and the simulations for sputter pressures (0.3-1 Pa) and target-substrate distances (7-16 cm) is obtained.

  14. Obtaining Au thin films in atmosphere of reactive nitrogen through magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Quintero, J. H.; Ospina, R.; Mello, A.

    2016-02-01

    4d and 5d series of the transition metals are used to the obtaining nitrides metallic, due to the synthesis of PtN, AgN and AuN in the last years. Different nitrides are obtained in the Plasma Assisted Physics Vapour Deposition system, due to its ionization energy which is necessary for their formation. In this paper a Magnetron Sputtering system was used to obtain Au thin films on Si wafers in Nitrogen atmosphere. The substrate temperature was varied between 500 to 950°C. The samples obtained at high temperatures (>500°C) show Au, Si and N elements, as it is corroborated in the narrow spectrum obtained for X-Ray Photoelectron Spectroscopy; besides the competition of orientation crystallographic texture between (111) and (311) directions was present in the X-Ray Diffraction analysis to the sample heated at 950°C.

  15. Comprehensive computer model for magnetron sputtering. I. Gas heating and rarefaction

    SciTech Connect

    Jimenez, Francisco J.; Dew, Steven K.

    2012-07-15

    The complex interaction between several variables in magnetron sputtering discharges is a challenge in developing engineering design tools for industrial applications. For instance, at high pressures, rarefaction and gas heating should no longer be neglected for determining several parameters of the process. In this article, we use a comprehensive 3D reactor-scale simulator that incorporates most phenomena of interest in a self-consistent manner to simulate the transport of sputtered particles over a wide range of pressures and powers. Calculations of aluminum deposition rates and metal vapor densities are in reasonable agreement with experiments over a wide range of pressures and powers. Of the elements investigated (Al, Ti, and Cu), copper showed the greatest rarefaction (30%) due to its higher sputtering yield. Titanium, despite a slightly lower sputtering yield than Al, shows a greater rarefaction than aluminum as more particles are reflected from the target as high energy neutrals. In this case, a more efficient energy transfer process is responsible for the higher rarefaction observed in Ti sputtering when compared to Al. The authors also observed that by sputtering at a higher pressure, the probability of electron impact ionization of sputtered particles is increased and speculate about the role of this process in contrast to penning ionization, which is believed to be the dominant ionization mechanism in magnetron sputtering.

  16. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    SciTech Connect

    Abramov, N F; Volpyan, O D; Obod, Yu A; Dronskii, R V

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  17. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  18. Deposition of a conductive near-infrared cutoff filter by radio-frequency magnetron sputtering.

    PubMed

    Lee, Jang-Hoon; Lee, Seung-Hyu; Yoo, Kwang-Lim; Kim, Nam-Young; Hwangbo, Chang Kwon

    2002-06-01

    We have designed a conductive near-infrared (NIR) cutoff filter for display application, i.e., a modified low-emissivity filter based on the three periods of the basic design of [TiO2[Ti]Ag] TiO2] upon a glass substrate and investigated the optical, structural, chemical, and electrical properties of the conductive NIR cutoff filter prepared by a radio frequency magnetron sputtering system. The results show that the average transmittance is 61.1% in the visible, that the transmittance in the NIR is less than 6.6%, and that the sheet resistance and emissivity are 0.9 ohms/square (where square stands for a square film) and 0.012, respectively, suggesting that the conductive NIR cutoff filter can be employed as a shield against the hazard of electromagnetic waves as well as to cut off the NIR. PMID:12064381

  19. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    NASA Astrophysics Data System (ADS)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  20. Structure and Properties of Ti-O-N Coatings Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Konischev, M. E.; Kuzmin, O. S.; Pustovalova, A. A.; Morozova, N. S.; Evdokimov, K. E.; Surmenev, R. A.; Pichugin, V. F.; Epple, M.

    2014-02-01

    Results of an experimental study of the optical characteristics of gas discharges are presented. The study was aimed at optimizing the operating modes of a mid-frequency magnetron sputtering system to efficiently deposit Ti-O-N coatings. The conditions for maintaining the intensity of the chosen spectroscopic lines that ensure synthesis of titanium oxide and titanium oxynitride coatings have been revealed. The morphology, structure, contact angle, and free surface energy of titanium oxide and titanium oxynitride coatings on type 12Kh18N10T stainless steel substrates were examined by using scanning and transmission electron microscopy and infrared spectroscopy, and by measuring the wetting angle. The results of examination of the structure and properties of the synthesized films and their physicomechanical and optical characteristics are given.

  1. Tungsten coatings deposited on CFC tiles by the combined magnetron sputtering and ion implantation technique

    NASA Astrophysics Data System (ADS)

    Ruset, C.; Grigore, E.; Maier, H.; Neu, R.; Li, X.; Dong, H.; Mitteau, R.; Courtois, X.

    2007-03-01

    Combined magnetron sputtering and ion implantation (CMSII) is a deposition technique involving simultaneous magnetron sputtering and high energy ion bombardment of the coating during its growth. A high voltage pulse discharge (U=40 kV, τ=20 μs, f=25 Hz) is superposed over the magnetron deposition and in this way, positive ions are accelerated to the components to be coated, bombarding initially the substrate and then the coating itself. In the framework of the ITER-like wall project this method was applied to produce nanostructured W coatings on the carbon fibre composite (CFC) substrate. These coatings have been characterized in terms of adhesion, thickness, structure and resistance to high thermal loads (up to 23.5 MW m-2). Based on the results of these tests, which are presented in this paper, CMSII technology was selected for coating about 1100 tiles with a 10 μm tungsten layer for the JET first wall and divertor.

  2. Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Lewandowski, M.

    2016-02-01

    The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

  3. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  4. Fabrication of hydrogenated microcrystalline silicon thin films using RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hsuan-Wen; Su, Wei-Ning; Han, Chia-Wei; Chen, Sheng-Hui; Lee, Cheng-Chung

    2007-09-01

    Hydrogenated microcrystalline silicon (μc-Si:H ) thin films have attracted many attentions due to the high mobility compared with the amorphous silicon (a-Si) thin films. To fabricate μc-Si:H thin films, plasma-enhance chemical vapor deposition (PECVD) is the most popular method. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH 4). Whereas there is no these disadvantages using radio-frequency (RF) magnetron sputtering to deposit silicon thin films. Unfortunately, the silicon thin films deposited by the regular RF magnetron sputtering are a-Si. In this study, μc-Si:H thin films were fabricated using RF magnetron sputtering with argon and hydrogen as working gas at low substrate temperature (T s=250°C and 350°C).The grain sizes, crystal volume fractions and photosensitivity (ratios of dark conductivities and photo conductivities) of the μc-Si:H thin films which deposited with different hydrogen partial pressures and sputtering powers were analyzed. The results showed that the grain sizes and the crystal volume fractions were increased and the photosensitivity was decreased as the hydrogen partial pressure increased at the sputtering power 200W. The grain size was between 15 to 20 nm and the crystal volume fractions was between 75 to 80% when the hydrogen partial pressure was over 90%.

  5. Metal-AlN cermet solar selective coatings deposited by direct current magnetron sputtering technology

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu

    1998-02-01

    A series of metal-aluminium nitride (M-AlN) cermet materials for solar selective coatings was deposited by a novel direct current (d.c.) magnetron sputtering technology. Aluminium nitride was used as the ceramic component in the cermets, and stainless steel (SS), nickel-based alloy 0022-3727/31/4/003/img1 (NiCr), molybdenum-based alloy 0022-3727/31/4/003/img2 (TZM) and tungsten were used as the metallic components. The aluminium nitride ceramic and metallic components of the cermets were deposited by simultaneously running both an aluminium target and another metallic target in a gas mixture of argon and nitrogen. The ceramic component was deposited by d.c. reactive sputtering and the metallic component by d.c. non-reactive sputtering. The total sputtering gas pressure was 0.8-1.0 Pa and the partial pressure of reactive nitrogen gas was set at 0.020-0.025 Pa which is sufficiently high to ensure that a nearly pure AlN ceramic sublayer was deposited by d.c. reactive sputtering. Because of the excellent nitriding resistance of stainless steel and the other alloys and metal, a nearly pure metallic sublayer was deposited by d.c. sputtering at this low nitrogen partial pressure. A multilayered system, consisting of alternating metallic and AlN ceramic sublayers, was deposited by substrate rotation. This multisublayer system can be considered as a macrohomogeneous cermet layer with metal volume fraction determined by controlling the thicknesses of metallic and ceramic sublayers. Following this procedure, M-AlN cermet solar selective coatings with a double cermet layer structure were deposited. The films of these selective surfaces have the following structure: a low metal volume fraction cermet layer is placed on a high metal volume fraction cermet layer which in turn is placed on an aluminium metal infrared reflection layer. The top surface layer consists of an aluminium nitride antireflection layer. A solar absorptance of 0.92-0.96 and a normal emittance of 0.03-0.05 at

  6. Hysteresis behavior during reactive magnetron sputtering of Al{sub 2}O{sub 3} using a rotating cylindrical magnetron

    SciTech Connect

    Depla, D.; Haemers, J.; Buyle, G.; Gryse, R. de

    2006-07-15

    Rotating cylindrical magnetrons are used intensively on industrial scale. A rotating cylindrical magnetron on laboratory scale makes it possible to study this deposition technique in detail and under well controlled conditions. Therefore, a small scale rotating cylindrical magnetron was designed and used to study the influence of the rotation speed on the hysteresis behavior during reactive magnetron sputtering of aluminum in Ar/O{sub 2} in dc mode. This study reveals that the hysteresis shifts towards lower oxygen flows when the rotation speed of the target is increased, i.e., target poisoning occurs more readily when the rotation speed is increased. The shift is more pronounced for the lower branch of the hysteresis loop than for the upper branch of the hysteresis. This behavior can be understood qualitatively. The results also show that the oxidation mechanism inside the race track is different from the oxidation mechanism outside the race track. Indeed, outside the race track the oxidation mechanism is only defined by chemisorption while inside the race track reactive ion implantation will also influence the oxidation mechanism.

  7. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    SciTech Connect

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

  8. A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

    DOE PAGESBeta

    Anders, André

    2014-09-02

    In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in thismore » review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.« less

  9. Magnetron sputtered boron films for increasing hardness of a metal surface

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    2003-05-27

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  10. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  11. Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation.

    PubMed

    Schroeder, J L; Thomson, W; Howard, B; Schell, N; Näslund, L-Å; Rogström, L; Johansson-Jõesaar, M P; Ghafoor, N; Odén, M; Nothnagel, E; Shepard, A; Greer, J; Birch, J

    2015-09-01

    We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (>50 keV), high photon flux (>10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (<1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation processes. The high-energy synchrotron-radiation based x-rays result in small scattering angles (<11°), allowing large areas of reciprocal space to be imaged with a 2D detector. The system has been designed for use on the 1-tonne, ultra-high load, high-resolution hexapod at the P07 High Energy Materials Science beamline at PETRA III at the Deutsches Elektronen-Synchrotron in Hamburg, Germany. The deposition system includes standard features of a typical UHV deposition system plus a range of special features suited for synchrotron radiation studies and industry-relevant processes. We openly encourage the materials research community to contact us for collaborative opportunities using this unique and versatile scientific instrument. PMID:26429486

  12. Compression and strong rarefaction in high power impulse magnetron sputtering discharges

    SciTech Connect

    Horwat, David; Anders, Andre

    2010-11-11

    Gas compression and strong rarefaction have been observed for high power impulse magnetron sputtering (HIPIMS) discharges using a copper target in argon. Time-resolved ion saturation currents of 35 probes were simultaneously recorded for HIPIMS discharges operating far above the self-sputtering runaway threshold. The argon background pressure was a parameter for the evaluation of the spatial and temporal development of the plasma density distribution. The data can be interpreted by a massive onset of the sputtering flux (sputter wind) that causes a transient densification of the gas, followed by rarefaction and the replacement of gas plasma by the metal plasma of sustained self-sputtering. The plasma density pulse follows closely the power pulse at low pressure. At high pressure, the relatively remote probes recorded a density peak only after the discharge pulse, indicative for slow, diffusive ion transport.

  13. Microstructure and properties of SiC-coated carbon fibers prepared by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jianrong; Zhou, Shan; Wei, Yongshan

    2016-04-01

    SiC-coated carbon fibers are prepared at room temperature with different radio-frequency magnetron sputtering powers. Results show that the coated carbon fibers have uniform, continuous, and flawless surfaces. The mean strengths of the coated carbon fibers with different sputtering powers are not influenced by other factors. Filament strength of SiC-coated carbon fibers increases by approximately 2% compared with that of uncoated carbon fibers at a sputtering power of <200 W. The filament strengths of the coated fibers increase by 9.3% and 12% at sputtering powers of 250 and 300 W, respectively. However, the mean strength of the SiC-coated carbon fibers decreased by 8% at a sputtering power of 400 W.

  14. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    SciTech Connect

    Weichsel, T. Hartung, U.; Kopte, T.; Zschornack, G.; Kreller, M.; Silze, A.

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  15. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Silze, A

    2014-05-01

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10(10) cm(-3) to 1 × 10(11) cm(-3), when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10(18) atoms/s for aluminum, which meets the demand for the production of a milliampere Al(+) ion beam. PMID:24880358

  16. Characterization of tantalum nitride thin films synthesized by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zaman, Anna

    Tantalum Nitride is chemically inert, oxidation resistant and hard. TaN finds its application as a protective coating on steel due to their excellent wear properties. It has become a very promising diffusion barrier material in Cu interconnect technology in microelectronics. TaN has not been analyzed as much as other transition metal nitrides like the TiN system because TaN exhibits various stable and metastable phases. The emergence of these phases and the different physical, chemical and mechanical properties depend on the growth technique and deposition conditions. TaN thin films were deposited using the magnetron PVD system in the SaNEL lab. The aim of this study was to identify the effect of processing parameters like N2/Ar ratio, substrate bias and temperature, on the emergence of the different phases present in TaN thin films and the effect of deposition conditions on the mechanical properties of these films. The phases present in the films, deposited at varying conditions were explored via low angle X-Ray Diffraction (XRD), hardness of the films was measured by Nanoindentation and tribological tests were carried out to measure the frictional and wear behavior. It was observed that at high percentage of Nitrogen (10%-25%) the main phase present was FCC TaN and as the nitrogen content was decreased a mixture of phases was present in these films. The hardness of the films increases as we decrease the Nitrogen content, yielding a film with a hardness of 37.1 GPa at 3% N2 with a substrate bias voltage of -100 V.

  17. Room temperature growth of nanocrystalline anatase TiO 2 thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Preetam; Kaur, Davinder

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  18. Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering

    SciTech Connect

    Zhang, X.L.; Hui, K.N.; Hui, K.S.; Singh, Jai

    2013-03-15

    Highlights: ► High-quality ZnO thin films were deposited at room temperature. ► Effect of O{sub 2} flow and RF sputtering voltages on properties of ZnO films were studied. ► O{sub 2}/Ar ratios played a key role in controlling optical properties of ZnO films. ► Photoluminescence intensity of the ZnO films strongly depended on O{sub 2}/Ar ratios. ► Crystallite size, stress and strain strongly depended on O{sub 2}/Ar ratios. - Abstract: ZnO thin films were deposited onto quartz substrates by radio frequency (RF) reactive magnetron sputtering using a Zn target. The structural and optical properties of the ZnO thin films were investigated comprehensively by X-ray diffraction (XRD), ultraviolet–visible and photoluminescence (PL) measurements. The effects of the oxygen content of the total oxygen–argon mixture and sputtering voltage in the sputtering process on the structural and optical properties of the ZnO films were studied systemically. The microstructural parameters, such as the lattice constant, crystallite size, stress and strain, were also calculated and correlated with the structural and optical properties of the ZnO films. In addition, the results showed that the crystalline quality of ZnO thin films improved with increasing O{sub 2}/Ar gas flow ratio from 2:8 to 8:2. XRD and PL spectroscopy revealed 800 V to be the most appropriate sputtering voltage for ZnO thin film growth. High-quality ZnO films with a good crystalline structure, tunable optical band gap as well as high transmittance could be fabricated easily by RF reactive magnetron sputtering, paving the way to obtaining cost-effective ZnO thin films transparent conducting oxides for optoelectronics applications.

  19. Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jiang, Jinlong; Wang, Yubao; Du, Jinfang; Yang, Hua; Hao, Junying

    2016-08-01

    The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7 at.% to 0.2 at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp3 carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40-60 sccm exhibits the very smooth surface (RMS roughness 0.4 nm), low stress (0.42 GPa), high hardness (21.1 GPa), as well as low friction coefficient (0.038) and wear rate (1.6 × 10-7 mm3/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.

  20. The electromagnetic shielding of Ni films deposited on cenosphere particles by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Yu, Xiaozheng; Shen, Zhigang

    2009-09-01

    Ni-coated cenosphere particles were successfully fabricated by an ultrasonic-assisted magnetron sputtering equipment. Their surface morphology and microstructure were analyzed using field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). FE-SEM results indicate that the Ni films coated by magnetron sputtering are uniform and compact. Ni film uniformity was related with the sputtering power and a large uniform film could be achieved at lower sputtering power. XRD results imply that the Ni film coated on cenospheres was a face-centered cubic (fcc) structure and the crystallization of film sample increases with increasing the sputtering power. The electromagnetic interference (EMI) shielding effectiveness (SE) of Ni-coated cenosphere particles were measured to be 4-27 dB over a frequency range 80-100 GHz, higher than those of uncoated cenosphere particles. The higher sputtering power and Ni film thickness are the higher EMI SE of the specimens. Ni-coated cenosphere particles are most promising alternative candidates for millimeter wave EMI shielding due to their lightweight, low cost, ease of processing, high floating time, good dispersion and tunable conductivities as compared with typical electromagnetic wave countermeasure materials.

  1. Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

    NASA Astrophysics Data System (ADS)

    Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

    2016-02-01

    Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

  2. Low target power wafer sputtering regime identified during magnetron tantalum barrier physical vapor deposition

    SciTech Connect

    Stout, Phillip J.; Denning, Dean J.; Michaelson, Lynne M.; Bagchi, Sandeep; Zhang Da; Ventzek, Peter L. G.

    2005-07-15

    A wafer sputtering regime has been identified during tantalum barrier deposition using a magnetron physical vapor deposition (MPVD) tool. The MPVD tools are designed to operate at high target powers (tens of kW) where the highly directed energetic metal (athermal metal) is the dominant metal species incident on the wafer. Although athermal metal gives better coverage than neutral metal (thermal) due to the narrower range of incident strike angles to the wafer, shadowing by the feature geometries is still a concern. Having available a wafer sputter regime or 'resputter' regime in a PVD tool allows for redistribution of metal from horizontal surfaces in the feature exposed to the plasma to vertical surfaces in the feature. The key in obtaining a wafer sputter regime is the operation of the plasma source in a range that the wafer bias power is effective at generating a sufficient self-bias for sputtering to occur. Discussed are modeling results which predict the wafer sputtering regime and the experimental confirmation that the low target power wafer sputter regime exists. The identified sputter regime in MPVD is such that there is a net deposition of metal at the field. Metal thickness reduction does occur at the trench and via bottoms where much of the unionized metal is being shadowed yielding a lower deposition to sputtering ratio compared to the field.

  3. Deposition of Tungsten Thin Films on Flexible Polymer Substrates by Direct-Current Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Huo, Zhenxuan; Jiao, Xiangquan; Zhong, Hui; Shi, Yu

    2015-11-01

    We have investigated thin tungsten films deposited on polymer substrates by direct-current magnetron sputtering under different conditions. Unlike tungsten films deposited on rigid substrates, films on polymer substrates grew at appropriate sputtering power, low sputtering pressure, and low substrate temperature. High sputtering power results in tungsten films with good crystal orientation, compact microstructure, and low electrical resistivity. However, high-power sputtering damages the polymer substrates. Enhancing sputtering pressure substantially degrades tungsten orientation and increases electrical resistivity. Furthermore, a slight increase in substrate temperature results in tungsten films with good crystal orientation, a dense microstructure, and low electrical resistivity. Nonetheless, a high substrate temperature results in soft and deformed polymer substrates; this degrades tungsten crystal orientation and substantially roughens tungsten films. On the basis of this study, compact and flat tungsten films with low electrical resistivity can be obtained at a sputtering power of 69 W, a sputtering pressure of 1 Pa, a substrate temperature of 100°C, and a distance between target and substrate of 60 mm.

  4. Hollow metal target magnetron sputter type radio frequency ion source.

    PubMed

    Yamada, N; Kasuya, T; Tsubouchi, N; Wada, M

    2014-02-01

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure. PMID:24593636

  5. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  6. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G. H.

    2015-09-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C) temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  7. Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature

    NASA Astrophysics Data System (ADS)

    Chen, Jian; Sun, Yihua; Lv, Xin; Li, Derong; Fang, Liang; Wang, Hailin; Sun, Xiaohua; Huang, Caihua; Yu, Haizhou; Feng, Ping

    2014-10-01

    Aluminum-doped zinc oxide (AZO) thin films with 250 nm thickness had been prepared on soda-lime glass substrate without heated by RF magnetron sputtering using a ceramic target. The microstructure, surface morphology, electrical and optical properties of AZO thin films had been investigated by X-ray diffraction, scanning electron microscope, four-point probe method and optical transmission spectroscopy. The results indicated that all of the films obtained were polycrystalline with a hexagonal structure and oriented with the c-axis perpendicular to the substrate. The resistivity decreased and transmittance improved with the sputtering power increase. The minimum resistivity of 2.55 × 10-3 Ω cm combined with highest transmittance of 91% was obtained at a sputtering power of 400 W. The optical bandgap at different sputtering power varied among 3.81-4.04 eV.

  8. Rarefaction windows in a high-power impulse magnetron sputtering plasma

    SciTech Connect

    Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos; Snyders, Rony

    2013-09-21

    The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point out on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)

  9. Recent advances in Pt coating of microspheres by a batch magnetron sputtering process

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.

    1980-08-29

    Some proposed inertial confinement fusion targets require high-Z, high density metal coatings on glass microspheres. Platinum, which satisfies the high-Z and density requirements, can be coated onto microspheres with a batch magnetron sputtering process incorporating oxygen as a dopant gas to prevent the microspheres from sticking. This paper outlines recent progress in three areas: First, the coating process has been improved; second, the oxygen content and resistivity of the oxygen doped platinum films are analyzed; and third, the roles oxygen may play in reducing microsphere sticking during sputtering are discussed in regard to cold welding, Van der Waals bonding, electrostatic sticking, and sintering.

  10. Velocity distribution of neutral species during magnetron sputtering by Fabry-Perot interferometry

    SciTech Connect

    Britun, N.; Han, J. G.; Oh, S.-G.

    2008-04-07

    The velocity distribution of a metallic neutral species sputtered in a dc magnetron discharge was measured using a planar Fabry-Perot interferometer and a hollow cathode lamp as a reference source. The measurement was performed under different angles of view relative to the target surface. The velocity distribution function in the direction perpendicular to the target becomes asymmetrical as the Ar pressure decreases, whereas it remains nearly symmetrical when the line of sight is parallel to the target surface. The average velocity of the sputtered Ti atoms was measured to be about 2 km/s.

  11. The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tumarkin, A. V.; Razumov, S. V.; Gagarin, A. G.; Altynnikov, A. G.; Stozharov, V. M.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-02-01

    Submicron thin layers of BaZr x Ti1- x O3 are grown in-situ by RF magnetron sputtering of a ceramic target ( x = 0.50) on a substrate of Pt/ r-cut leucosapphire Al2O3. It is shown that the composition of the ferroelectric layer is not identical to the composition of the sputtered target and is shifted toward barium zirconate. The reasons for such behavior are discussed. The obtained samples are characterized by high breakdown voltages (1 MV/cm and higher). The structural and high-frequency dielectric properties are studied, and high tunability of the capacitance of thin layers is revealed.

  12. Magnetic field effects in RF magnetron sputtering of CdS/CdTe solar cells

    SciTech Connect

    Compaan, A.D.; Shao, M.; Tabory, C.N.; Feng, Z.; Fischer, A.; Shen, F.; Narayanswami, C.; Bohn, R.G.

    1996-01-01

    We have studied effects of magnetic field strength and configuration on rf planar magnetron sputtering of CdS and CdTe. This study was carried out with one sputter gun having an unbalanced magnetic field and a second gun having an approximately balanced magnetic field. The unbalanced field gun produces significantly higher ion and electron bombardment of the film during growth and slightly higher electron kinetic energies. Films produced with the unbalanced gun show much stronger photoluminescence and cell performance is much better when the CdTe is deposited with the unbalanced gun. {copyright} {ital 1996 American Institute of Physics.}

  13. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  14. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  15. Characterization of hydrogenated and deuterated silicon carbide films codeposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Pantelica, D.; Ionescu, P.; Petrascu, H.; Dracea, M. D.; Statescu, M.; Matei, E.; Rasoga, O.; Stancu, C.; Marascu, V.; Ion, V.; Acsente, T.; Dinescu, G.

    2016-03-01

    In this work we present the deposition of amorphous SiC thin films by radiofrequency dual magnetron sputtering. The dependence of the deposited films properties over the discharges electrical power and the effect of hydrogenous species (H2 and/or D2) addition to main discharge gas (Ar) were investigated. Accurate elemental analysis of the samples, including detection of hydrogen and deuterium, was performed by ion beam analysis (IBA) techniques: RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis). SiCx thin films with thicknesses between 1700 and 4500 Å and C/Si ratio between 0.2/1 and 1.25/1 were obtained in different deposition conditions. The results prove that thin films of amorphous SiC with well controlled properties can be produced using radiofrequency dual magnetron sputtering.

  16. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    SciTech Connect

    Rajalakshmi, R.; Angappane, S.

    2015-06-24

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO{sub 2}/SiO{sub x}/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ∼200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  17. Resistive switching behavior of RF magnetron sputtered ZnO thin films

    NASA Astrophysics Data System (ADS)

    Rajalakshmi, R.; Angappane, S.

    2015-06-01

    The resistive switching characteristics of RF magnetron sputtered zinc oxide thin films have been studied. The x-ray diffraction studies confirm the formation of crystalline ZnO on Pt/TiO2/SiOx/Si substrate. We have fabricated Cu/ZnO/Pt device using a shadow masking technique for resistive switching study. Our Cu/ZnO/Pt device exhibits a unipolar resistive switching behaviour. The switching observed in our device could be related to oxygen vacancies or Cu ions that generate the conducting filaments responsible for resistive switching. We found HRS to LRS resistance ratio of as high as ˜200 for our Cu/ZnO/Pt device. The higher resistance ratio and stability of Cu/ZnO/Pt device would make our RF magnetron sputtered zinc oxide thin films suitable for non volatile memory applications.

  18. Measuring the energy flux at the substrate position during magnetron sputter deposition processes

    SciTech Connect

    Cormier, P.-A.; Thomann, A.-L.; Dussart, R.; Semmar, N.; Mathias, J.; Balhamri, A.; Snyders, R.; Konstantinidis, S.

    2013-01-07

    In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

  19. Electrochromism of DC magnetron-sputtered TiO2: Role of film thickness

    NASA Astrophysics Data System (ADS)

    Sorar, Idris; Pehlivan, Esat; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-11-01

    Titanium dioxide films were prepared by reactive DC magnetron sputtering and the role of the film thickness d on the electrochromism was analyzed for 100 < d < 400 nm. The best properties were obtained for the thickest films, which yielded a mid-luminous transmittance modulation of 58% and a corresponding coloration efficiency of 26.3 cm2/C. The films were amorphous according to X-ray diffraction measurements and showed traces of adsorbed water as revealed by infrared spectroscopy.

  20. Effects of Substrate Temperature on ZAO Thin Film Prepared by DC Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Lu, F.; Zhou, X. G.; Xu, C. H.; Wen, L. S.

    The effects of substrate temperature on the resistivity and transmittance of ZAO thin films prepared by DC magnetron reactive sputtering have been investigated. The properties of the samples have been analyzed through Hall effect, X-ray diffraction and SEM. The results show that carrier concentration, Hall mobility and crystallinity of the films depend obviously on the deposition temperature. The film deposited at the range 200-250°C has lower resistivity and higher transmittance.

  1. MeV electron irradiation of Si-SiO2 structures with magnetron sputtered oxide

    NASA Astrophysics Data System (ADS)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2016-03-01

    MeV electrons influence on the characteristics of Si-SiO2 structure with magnetron sputtered oxide was studied by ellipsometry and the thermally stimulated current (TSC) method. The MOS structures used in this study were fabricated on <100> oriented p-Si wafers of 12.75-17,25 Ω.cm resistivity. Magnetron sputtered oxides with different thicknesses of 20 and 100 nm were deposited on p-Si substrates. Both groups of samples were irradiated by 23 MeV electrons. The oxide thicknesses and TSC characteristics of the MOS samples were measured before and after MeV electron irradiation with doses of 4.8×1015 and 4.8×1016 el.cm-2. The oxide thicknesses of both groups of samples increased after irradiation. The main defects generated by the MeV electrons were evaluated. It was shown that the trap concentration increases with the electron irradiation dose. The main peak in the TSC characteristics gives information about the main radiation defects at the Si-SiO2 interface of the MOS structures. These defects can be related to the vacancy-boron complexes which are associated with the main impurities in the p-Si substrate. These results correspond to our results reported earlier for MeV electron irradiated Si-SiO2 structures with thermally grown oxide. But (in this case) the effects observed are more pronounced for the magnetron sputtered oxide. A possible reason is the higher defect concentration generated in the magnetron sputtered oxide during its deposition on Si-substrates.

  2. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  3. Fabrication of Optical Multilayer Devices from Porous Silicon Coatings with Closed Porosity by Magnetron Sputtering.

    PubMed

    Caballero-Hernández, Jaime; Godinho, Vanda; Lacroix, Bertrand; Jiménez de Haro, Maria C; Jamon, Damien; Fernández, Asunción

    2015-07-01

    The fabrication of single-material photonic-multilayer devices is explored using a new methodology to produce porous silicon layers by magnetron sputtering. Our bottom-up methodology produces highly stable amorphous porous silicon films with a controlled refractive index using magnetron sputtering and incorporating a large amount of deposition gas inside the closed pores. The influence of the substrate bias on the formation of the closed porosity was explored here for the first time when He was used as the deposition gas. We successfully simulated, designed, and characterized Bragg reflectors and an optical microcavity that integrates these porous layers. The sharp interfaces between the dense and porous layers combined with the adequate control of the refractive index and thickness allowed for excellent agreement between the simulation and the experiments. The versatility of the magnetron sputtering technique allowed for the preparation of these structures for a wide range of substrates such as polymers while also taking advantage of the oblique angle deposition to prepare Bragg reflectors with a controlled lateral gradient in the stop band wavelengths. PMID:26046812

  4. Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kobayakawa, Satoshi; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

    2006-08-01

    ZAO and ITO thin films were prepared by RF magnetron sputtering. In this study, three of the sputtering parameters, that is, substrate temperature, oxygen flow rate and RF discharge power were varied separately to fabricate samples. The range of variation of substrate temperature was from room temperature to 623 K. The relative concentration of O2 in the ambient gas in the chamber was 0% or 25%. The sputtering rate was changed by controlling the discharge power. The minimum surface resistivity of ZAO was 2.53 × 102 Ω/cm2 for samples sputtered at a substrate temperature of 373 K and that of ITO was 2.37 × 101 Ω/cm2 sputtered under standard conditions. Visible light transmittances of these samples were 89.9% and 90.2%, respectively. From these results, it is suggested that when sputtered with optimum sputtering parameters, ZAO is a potential material for practical use for transparent conducting electrodes (TCO) for PDPs.

  5. On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

    NASA Astrophysics Data System (ADS)

    Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

    2014-04-01

    The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps

  6. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gupta, Rachana; Pandey, Nidhi; Behera, Layanta; Gupta, Mukul

    2016-05-01

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N2 gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L2,3 and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  7. Nanoindentation and scratch studies on magnetron sputtered Ti thin films.

    PubMed

    Kataria, S; Ramaseshan, R; Dash, S; Tyagi, A K

    2009-09-01

    Ti thin films sputter deposited on D9 steel at two different temperatures were studied for their mechanical behavior under static and sliding contact conditions using nanoindentation and scratch tests. The film hardness measured at the surface of the coatings exhibited a value of 2.5 GPa, for both conditions. From the scratch test, it is understood that coatings deposited at 200 degrees C substrate temperature showed superior adhesion strength. Critical load to failure for these coatings was evaluated at 2 N. PMID:19928247

  8. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics. PMID:24245329

  9. Deposition of ultrahard Ti-Si-N coatings by pulsed high-current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Zakharov, A. N.; Rabotkin, S. V.; Solov'ev, A. A.

    2016-02-01

    We report on the results of investigation of properties of ultrahard Ti-Si-N coatings deposited by pulsed high-current magnetron reactive sputtering (discharge pulse voltage is 300-900 V, discharge pulse current is up to 200 A, pulse duration is 10-100 μs, and pulse repetition rate is 20-2000 Hz). It is shown that for a short sputtering pulse (25 μs) and a high discharge current (160 A), the films exhibit high hardness (66 GPa), wear resistance, better adhesion, and a lower sliding friction coefficient. The reason is an enhancement of ion bombardment of the growing coating due to higher plasma density in the substrate region (1013 cm-3) and a manifold increase in the degree of ionization of the plasma with increasing peak discharge current (mainly due to the material being sputtered).

  10. Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ming-Wei, Gao; Chao, Ye; Xiang-Ying, Wang; Yi-Song, He; Jia-Min, Guo; Pei-Fang, Yang

    2016-07-01

    Growth and structural properties of thin a-C films prepared by the 60 MHz very-high-frequency (VHF) magnetron sputtering were investigated. The energy and flux of ions impinging the substrate were also analyzed. It is found that the thin a-C films prepared by the 60 MHz sputtering have a lower growth rate, a smooth surface, and more sp3 contents. These features are related to the higher ion energy and the lower ions flux onto the substrate. Therefore, the 60 MHz VHF sputtering is more suitable for the preparation of thin a-C film with more sp3 contents. Project supported by the National Natural Science Foundation of China (Grant No. 11275136).

  11. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    SciTech Connect

    Kumar, G. Anil Reddy, M. V. Ramana; Reddy, Katta Narasimha

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  12. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  13. Surface roughness and interface width scaling of magnetron sputter deposited Ni/Ti multilayers

    SciTech Connect

    Maidul Haque, S.; Biswas, A.; Tokas, R. B.; Bhattacharyya, D.; Sahoo, N. K.; Bhattacharya, Debarati

    2013-09-14

    Using an indigenously built r.f. magnetron sputtering system, several single layer Ti and Ni films have been deposited at varying deposition conditions. All the samples have been characterized by Grazing Incidence X-ray Reflectivity (GIXR) and Atomic Force Microscopy to estimate their thickness, density, and roughness and a power law dependence of the surface roughness on the film thickness has been established. Subsequently, at optimized deposition condition of Ti and Ni, four Ni/Ti multilayers of 11-layer, 21-layer, 31-layer, and 51-layer having different bilayer thickness have been deposited. The multilayer samples have been characterized by GIXR and neutron reflectivity measurements and the experimental data have been fitted assuming an appropriate sample structure. A power law correlation between the interface width and bilayer thickness has been observed for the multilayer samples, which was explained in the light of alternate roughening/smoothening of multilayers and assuming that at the interface the growth “restarts” every time.

  14. Nitrogen self-diffusion in magnetron sputtered Si-C-N films

    NASA Astrophysics Data System (ADS)

    Hüger, E.; Schmidt, H.; Geue, T.; Stahn, J.; Tietze, U.; Lott, D.; Markwitz, A.; Geckle, U.; Bruns, M.

    2011-05-01

    Self-diffusion was studied in magnetron sputtered nitrogen-rich amorphous compounds of the system Si-C-N by using nitrogen as a model tracer. As shown by infra-red spectroscopy a transient metastable region exists, where the structure of the material can be visualized as silicon nitride tetrahedra which are connected by carbo-diimide (-N=C=N-) bonds to a three dimensional amorphous network. In this region diffusion studies are carried out by neutron reflectometry and isotope multilayers as a function of annealing time, temperature and chemical composition. Low diffusivities between 10-20 and 10-24 m2/s were found. In the metastable region, diffusion is faster than diffusion in amorphous silicon nitride by 1 to 2 orders of magnitude, while the activation enthalpies of diffusion between 3.1 and 3.4 eV are the same within error limits. This can be explained by the fact that the diffusion mechanism along SiN4 tetrahedra is identical to that in amorphous silicon nitride, however, the carbo-diimide bonds seem to widen the structure, allowing faster diffusion. A correlation between diffusivities and the number of carbo-diimid bonds present in the material is found, where the highest diffusivities are observed for materials with the highest number of carbo-diimid bonds, close to the composition Si2CN4.

  15. The model of calculation the adhesion force and energy for coatings deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tkachenko, E. A.; Postnikov, D. V.; Blesman, A. I.; Polonyankin, D. A.

    2016-02-01

    The paper justifies the usefulness of preliminary ion implantation before forming the protective coating by magnetron sputtering in order to improve its adhesion and hence the coating durability. The important characteristics of coatings include the adhesion force and energy. To select the optimal modes of coatings formation, materials and equipment it is proposed the theoretical method of the adhesion force calculation in binary metallic systems. The adhesion force and energy depend on the elemental distribution in the depth of the coating and on the single bond force as in the substrate and in the coating. In addition the adhesion force is also determined by the coefficient taking into account the reduction of the possible bond number and depending on the surface purity and the structural defects presence. The developed model includes all of the above factors. The elements distribution over the depth of the coating was estimated using a kinetic model of mass transfer by vacancy mechanism. The paper presents the results of the adhesion force calculation for the chromium coating on the surface of A21382 steel.

  16. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  17. Nitrogen self-diffusion in magnetron sputtered Si-C-N films

    SciTech Connect

    Hueger, E.; Schmidt, H.; Geue, T.; Stahn, J.; Tietze, U.; Lott, D.; Markwitz, A.; Geckle, U.; Bruns, M.

    2011-05-01

    Self-diffusion was studied in magnetron sputtered nitrogen-rich amorphous compounds of the system Si-C-N by using nitrogen as a model tracer. As shown by infra-red spectroscopy a transient metastable region exists, where the structure of the material can be visualized as silicon nitride tetrahedra which are connected by carbo-diimide (-N=C=N-) bonds to a three dimensional amorphous network. In this region diffusion studies are carried out by neutron reflectometry and isotope multilayers as a function of annealing time, temperature and chemical composition. Low diffusivities between 10{sup -20} and 10{sup -24} m{sup 2}/s were found. In the metastable region, diffusion is faster than diffusion in amorphous silicon nitride by 1 to 2 orders of magnitude, while the activation enthalpies of diffusion between 3.1 and 3.4 eV are the same within error limits. This can be explained by the fact that the diffusion mechanism along SiN{sub 4} tetrahedra is identical to that in amorphous silicon nitride, however, the carbo-diimide bonds seem to widen the structure, allowing faster diffusion. A correlation between diffusivities and the number of carbo-diimid bonds present in the material is found, where the highest diffusivities are observed for materials with the highest number of carbo-diimid bonds, close to the composition Si{sub 2}CN{sub 4}.

  18. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  19. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  20. (Ti,Al,Si,C)N nanocomposite coatings synthesized by plasma-enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Yanfeng; Zhengxian, Li; Jihong, Du; Yunfeng, Hua; Baoyun, Wang

    2011-10-01

    Materials' surface service property could be enhanced by transition metal nitride hard coatings due to their high hardness, wear and high temperature oxidation resistance, but the higher friction coefficient (0.4-0.9) of which aroused terrible abrasion. In this work, quinternary (Ti,Al,Si,C)N hard coating 3-4 μm was synthesized at 300 °C using plasma enhanced magnetron sputtering system. It was found that the coating's columnar crystals structure was restrained obviously with the increase of C content and a non-columnar crystals growth mode was indicated at the C content of 33.5 at.%. Both the XRD and TEM showed that the (Ti,Al,Si,C)N hard coatings had unique nanocomposite structures composed of nanocrystalline and amorphous nc-(Ti,Al)(C,N)/nc-AlN/a-Si 3N 4/a-Si/a-C. However, the coatings were still super hard with the highest hardness of 41 GPa in spite of the carbon incorporation. That a-C could facilitate the graphitization process during the friction process which could improve the coating's tribological performance. Therefore, that nanocomposite (Ti,Al,Si,C)N coatings with higher hardness (>36 GPa) and a lower friction coefficient (<0.2) could be synthesized and enhance the tribological performance and surface properties profoundly.

  1. A feedback model of magnetron sputtering plasmas in HIPIMS

    NASA Astrophysics Data System (ADS)

    Ross, A. E.; Ganesan, R.; Bilek, M. M. M.; McKenzie, D. R.

    2015-04-01

    We present a 1D feedback model that captures the essential elements of plasma pulse initiation and is useful for control and diagnostics of sputtering plasmas. Our model falls into the class of single-species population models with recruitment and time delay, which show no oscillatory behaviour. The model can reproduce essential features of published time-current traces from plasma discharges and is useful to determine the key parameters affecting the evolution of the discharge. We include the external circuit and we focus on the time evolution of the current as a function of the applied voltage and the plasma parameters. We find the necessity of a nonlinear loss term in the time-dependent plasma ion population to ensure a stable discharge, and we show that a higher secondary electron emission coefficient reduces the time delay for current initiation. We report that I-V characteristics in the plateau region, where it exists, fit a power curve of the form I = kVn, where n is influenced most strongly by the nonlinear loss term.

  2. Thin film transistor based on TiOx prepared by DC magnetron sputtering.

    PubMed

    Chung, Sung Mook; Shin, Jae-Heon; Hong, Chan-Hwa; Cheong, Woo-Seok

    2012-07-01

    This paper reports on the thin film transistor (TFT) based on TiOx prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic TiOx target was prepared for the sputtering of the TiO2 films. The structural, optical, and electrical properties of the TiO2 films were investigated after their heat treatment. It is observed from XRD measurement that the TiO2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure TiO2 films show a band-gap energy of approximately 3.20 eV and a transmittance of approximately 91% (@550 nm). The bottom-gate TFTs fabricated with the TiO2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 10(4), 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying TiO2 films depositied by DC magnetron sputtering to TiO2-based opto-electronic devices. PMID:22966586

  3. Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films

    SciTech Connect

    Pamu, D.; Sudheendran, K.; Ghanashyam Krishna, M.; James Raju, K. C.

    2008-03-15

    Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, even at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.

  4. Stability of radiofrequency magnetron sputtered calcium phosphate coatings under cyclically loaded conditions.

    PubMed

    Wolke, J G; van der Waerden, J P; de Groot, K; Jansen, J A

    1997-03-01

    The stability of radiofrequency (RF) magnetron sputtered calcium phosphate was studied under cyclically loaded conditions. The coatings were deposited on titanium bars and tested in either dry or wet conditions X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis and Fourier transform infrared (FTIR) spectroscopy were used to characterize the as-sputtered and tested coatings. XRD demonstrated that the amorphous structure after annealing at 650 C changed into a crystalline apatite structure. The residual stresses were determined by the XRD cos 2 i/i method. These residual film stresses were influenced by the coating conditions and the crystalline sputtered coating showed the presence of compressive stresses. SEM demonstrated that, after cyclic loading conditions in air, the crystalline sputter-coated Ti-6A1-4V bars showed a partial coating loss. Furthermore, in wet conditions (simulated body fluid) only the heat-treated sputter-coated bars appeared to be stable. On the other hand, the amorphous coating only showed signs of delamination in the more highly stressed regions, while in the less stressed regions a Ca-P precipitate was formed. On the basis of these results we conclude that calcium phosphate coatings subjected to cyclic loading conditions show an important difference in fatigue behaviour when tested in either dry or wet conditions. PMID:9111952

  5. Sputter deposition of MgxAlyOz thin films in a dual-magnetron device: a multi-species Monte Carlo model

    NASA Astrophysics Data System (ADS)

    Yusupov, M.; Saraiva, M.; Depla, D.; Bogaerts, A.

    2012-07-01

    A multi-species Monte Carlo (MC) model, combined with an analytical surface model, has been developed in order to investigate the general plasma processes occurring during the sputter deposition of complex oxide films in a dual-magnetron sputter deposition system. The important plasma species, such as electrons, Ar+ ions, fast Ar atoms and sputtered metal atoms (i.e. Mg and Al atoms) are described with the so-called multi-species MC model, whereas the deposition of MgxAlyOz films is treated by an analytical surface model. Target-substrate distances for both magnetrons in the dual-magnetron setup are varied for the purpose of growing stoichiometric complex oxide thin films. The metal atoms are sputtered from pure metallic targets, whereas the oxygen flux is only directed toward the substrate and is high enough to obtain fully oxidized thin films but low enough to avoid target poisoning. The calculations correspond to typical experimental conditions applied to grow these complex oxide films. In this paper, some calculation results are shown, such as the densities of various plasma species, their fluxes toward the targets and substrate, the deposition rates, as well as the film stoichiometry. Moreover, some results of the combined model are compared with experimental observations. Note that this is the first complete model, which can be applied for large and complicated magnetron reactor geometries, such as dual-magnetron configurations. With this model, we are able to describe all important plasma species as well as the deposition process. It can also be used to predict film stoichiometries of complex oxide films on the substrate.

  6. High power pulsed magnetron sputtering: A method to increase deposition rate

    SciTech Connect

    Raman, Priya McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-05-15

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed.

  7. Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

    NASA Astrophysics Data System (ADS)

    Hecimovic, Ante

    2012-10-01

    High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

  8. Large-scale two-dimensional MoS₂ photodetectors by magnetron sputtering.

    PubMed

    Ling, Z P; Yang, R; Chai, J W; Wang, S J; Leong, W S; Tong, Y; Lei, D; Zhou, Q; Gong, X; Chi, D Z; Ang, K-W

    2015-05-18

    We report on the demonstration of photodetectors based on large scale two-dimensional molybdenum disulfide (MoS2) transition metal dichalcogenides. Excellent film uniformity and precise control of the MoS2 thickness down to a monolayer (~0.75nm) were achieved by magnetron sputtering synthesis approach. In particular, the photodetectors integrated with five MoS2 monolayers exhibit a high photoresponsivity of 1.8 A/W, an external quantum efficiency exceeding 260%, and a photodetectivity of ~5 x 10(8) Jones for a wavelength of 850 nm, surpassing the performance of mechanically exfoliated based photodetectors. PMID:26074606

  9. Structural parameters and polarization properties of TiN thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Solovan, M. M.; Brus, V. V.; Pidkamin, L. J.; Maryanchuk, P. D.; Dobrovolsky, Yu. G.

    2015-11-01

    We report the results of the investigation of morphological, structural, optical and plarimeteric properties of titanium nitride thin films deposited on silicon and glass substrates. The magnetron sputtered titanium nitride thin films were established to possess crystalline structure with the average grain size about D = 15 nm. The method of correlation matrix is was applied for the analysis of polarization properties of scattered light by the titanium nitride thin film. The obtained experimental result, can be explained by the presence of the effects of linear and circular dichroism in the material of the titanium nitride thin films under investigations.

  10. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  11. Electrochemical Performance of rf Magnetron Sputtered LiCoO{sub 2} Thin Film Positive Electrodes

    SciTech Connect

    Kumar, P. Jeevan; Babu, K. Jayanth; Hussain, O. M.

    2010-12-01

    Thin films of LiCoO{sub 2} were grown by rf magnetron sputtering technique and studied the influence of In situ annealing treatment on microstructural and electrochemical properties of the films. Annealing treatment in presence of O{sub 2} ambient develops characteristic (104) plan in relative to (003) plane texture indicating that the films have HT-layered structure with R3-bar m symmetry. The effect is discussed in terms of grain size, cycling stability, reversibility and the specific discharge capacity.

  12. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  13. Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

    SciTech Connect

    Yang, Yuchen; Tanaka, Koichi; Liu, Jason; Anders, André

    2015-03-23

    High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

  14. Preparation of DC reactive magnetron sputtered ZnO thin film towards photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Prabhu, M.; Sivanantham, A.; Kannan, P. Karthick; Vishnukanthan, V.; Mayandi, J.

    2013-06-01

    Zinc oxide thin films deposited on glass and p-type silicon (100) substrates by DC reactive magnetron sputtering are reported here. The XRD investigations confirmed that the thin films deposited by this technique have hexagonal wurtzite structure. AFM results present the surface morphology and roughness of the deposited thin films. From the optical absorption spectrum, the band gap of the thin film is found to be ˜ 3.2 eV. The photoluminescence spectrum of the sample has an UV emission peak centered at 407 nm with broad visible emission in the range of 500-580 nm.

  15. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    SciTech Connect

    Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel; Anders, Andre

    2013-07-17

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

  16. Preparation of a-SiC:H/a-GeC:H superlattices by dual magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Saito, N.; Yamaguchi, T.

    1989-10-01

    Amorphous semiconductor superlattices composed of hydrogenated amorphous silicon carbon alloys and germanium carbon alloys have been prepared by a dual magnetron sputtering method. A small-angle x-ray diffraction measurement has indicated that the superlattices consist of well-defined smooth layers. Optical band gap has been examined for a series of samples; the thickness of the germanium carbon layer was changed from 20 to 130 Å, while the thickness of the silicon carbon layer was kept constant at 60 Å. The optical band gap increases upon decreasing the thickness of the germanium carbon layer, indicating quantum size effects due to the formation of superlattice structures.

  17. Microstructural studies of nanocomposite thin films of Ni/CrN prepared by reactive magnetron sputtering.

    PubMed

    Kuppusami, P; Thirumurugesan, R; Divakar, R; Kataria, S; Ramaseshan, R; Mohandas, E

    2009-09-01

    Synthesis and characterization of nanocomposites of Ni/CrN thin films prepared by DC magnetron sputtering from a target of 50 wt.%Ni-50 wt.%Cr is investigated. The films prepared as a function of nitrogen flow rate and substrate temperature showed that the films contained Ni and CrN phases with crystallite sizes in the nanometer range. Measurement of nanomechanical properties of the composite films exhibited a significant decrease in the values of hardness and Young's modulus than those of pure CrN films. PMID:19928270

  18. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  19. Alfven's critical ionization velocity observed in high power impulse magnetron sputtering discharges

    SciTech Connect

    Brenning, N.; Lundin, D.

    2012-09-15

    Azimuthally rotating dense plasma structures, spokes, have recently been detected in several high power impulse magnetron sputtering (HiPIMS) devices used for thin film deposition and surface treatment, and are thought to be important for plasma buildup, energizing of electrons, as well as cross-B transport of charged particles. In this work, the drift velocities of these spokes are shown to be strongly correlated with the critical ionization velocity, CIV, proposed by Alfven. It is proposed as the most promising approach in combining the CIV and HiPIMS research fields is to focus on the role of spokes in the process of electron energization.

  20. Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

    SciTech Connect

    Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru Ohno, Yasunori; Itoh, Masatoshi; Uhara, Yoshio; Miura, Tsutomu; Nakano, Hirofumi

    2015-11-15

    A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

  1. Influence of the microstructure on the corrosion behavior of magnetron sputter-quenched amorphous metallic alloys

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Khanna, S. K.; Williams, R. M.; Landel, R. F.

    1983-01-01

    The microstructure and corrosion behavior of magnetron sputter deposited amorphous metallic films of (Mo6ORu40)82B18 under varying sputtering atmospheres have been investigated. The microstructural details and topology of the films have been studied by scanning electron microscopy and correlated with the deposition conditions. By reducing the pressure of pure argon gas, the characteristic features of rough surface and columnar growth full of vertical voids can be converted into a mirror-smooth finish with very dense deposits. Films deposited in the presence of O2 or N2 exhibit columnar structure with vertical voids. Film deposited in pure argon at low pressure show remarkably high corrosion resistance due to the formation of a uniform passive surface layer. The influence of the microstructure and surface texture on the corrosion behavior is discussed.

  2. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  3. Particle visualization in high-power impulse magnetron sputtering. I. 2D density mapping

    SciTech Connect

    Britun, Nikolay Palmucci, Maria; Konstantinidis, Stephanos; Snyders, Rony

    2015-04-28

    Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. This paper deals with two-dimensional density mapping in the discharge volume obtained by laser-induced fluorescence imaging. The time-resolved density evolution of Ti neutrals, singly ionized Ti atoms (Ti{sup +}), and Ar metastable atoms (Ar{sup met}) in the area above the sputtered cathode is mapped for the first time in this type of discharges. The energetic characteristics of the discharge species are additionally studied by Doppler-shift laser-induced fluorescence imaging. The questions related to the propagation of both the neutral and ionized discharge particles, as well as to their spatial density distributions, are discussed.

  4. Nanoporous Ti-metal film deposition using radio frequency magnetron sputtering technique for photovoltaic application.

    PubMed

    Sung, Youl-Moon; Paeng, Sung-Hwan; Moon, Byung-Ho; Kwak, Dong-Joo

    2012-02-01

    Nanoporous Ti-metal film electrode was fabricated by radio frequency (rf) magnetron sputtering technique on nanoporous TiO2 layer prepared by sol-gel combustion method and investigated with respect to its photo-anode properties of TCO-less DSCs. The porous Ti layer (approximately 1 microm) with low sheet resistance (approximately 17 Omega/sq.) can collect electrons from the TiO2 layer and allows the ionic diffusion of I(-)/I(3-) through the hole. The porous Ti layer with highly ordered columnar structure prepared by 8 mTorr sputtering shows the good impedance characteristics. The efficiency of prepared TCO-less DSCs sample is about 4.83% (ff: 0.6, Voc: 0.65 V, Jsc: 11.2 mA/cm2). PMID:22629960

  5. Hydroxyapatite coatings on nanotubular titanium dioxide thin films prepared by radio frequency magnetron sputtering.

    PubMed

    Shin, Jinho; Lee, Kwangmin; Koh, Jeongtae; Son, Hyeju; Kim, Hyunseung; Lim, Hyun-Pil; Yun, Kwidug; Oh, Gyejeong; Lee, Seokwoo; Oh, Heekyun; Lee, Kyungku; Hwang, Gabwoon; Park, Sang-Won

    2013-08-01

    In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface, anodized Ti surface, as-sputtered HA coating on the anodized Ti surface, and heat-treated HA coating on the anodized Ti surface were prepared. The samples were characterized using scanning electron microscopy and X-ray photoemission spectroscopy, and biologic responses were evaluated. The top of the TiO2 nanotubes was not closed by HA particles when the coating time is less than 15 minutes. It was demonstrated that the heat-treated HA was well-crystallized and this enhanced the cell attachment of the anodized Ti surface. PMID:23882839

  6. Effect of surface treatment on adhesion strength between magnetron sputtered copper thin films and alumina substrate

    NASA Astrophysics Data System (ADS)

    Lim, Ju Dy; Lee, Pui Mun; Rhee, Daniel Min Woo; Leong, Kam Chew; Chen, Zhong

    2015-11-01

    A number of surface pre-treatments have been studied for their effectiveness on the adhesion strength between magnetron sputtered copper (Cu) thin film and polycrystalline alumina (Al2O3) substrate. The treatments include organic solvent cleaning, acid washing, heat treatment, plasma cleaning, and they were organized into different sequences in order to evaluate their individual contribution to the film adhesion. Adhesion strength was measured mechanically using a pull test. By proper pre-treatment, the adhesive strength of at least 34 MPa can be achieved with direct sputtering of Cu thin film onto the Al2O3 substrate. With the help of XPS, SEM, XRD, TGA and contact angle measurement, the effect of the different substrate surface treatment techniques has been elucidated.

  7. Cleaning of HT-7 Tokamak Exposed First Mirrors by Radio Frequency Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Yan, Rong; Chen, Junling; Chen, Longwei; Ding, Rui; Zhu, Dahuan

    2014-12-01

    The stainless steel (SS) first mirror pre-exposed in the deposition-dominated environment of the HT-7 tokamak was cleaned in the newly built radio frequency (RF) magnetron sputtering plasma device. The deposition layer on the FM surface formed during the exposure was successfully removed by argon plasma with a RF power of about 80 W and a gas pressure of 0.087 Pa for 30 min. The total reflectivity of the mirrors was recovered up to 90% in the wavelength range of 300-800 nm, while the diffuse reflectivity showed a little increase, which was attributed to the increase of surface roughness in sputtering, and residual contaminants. The FMs made from single crystal materials could help to achieve a desired recovery of specular reflectivity in the future.

  8. Microstructure and residual stress of magnetron sputtered nanocrystalline palladium and palladium gold films on polymer substrates

    SciTech Connect

    Castrup, Anna; Kuebel, Christian; Scherer, Torsten; Hahn, Horst

    2011-03-15

    The authors report the structural properties and residual stresses of 500-nm-thick nanocrystalline Pd and PdAu films on compliant substrates prepared by magnetron sputtering as a function of the pressure of the Ar-sputtering gas. Films were analyzed by x-ray diffraction, cross-sectional transmission electron microscopy, and x-ray photoelectron spectroscopy. At low pressures the metal films exhibit strong compressive stresses, which rapidly change to highly tensile with increasing pressure, and then gradually decrease. Along with this effect a change in microstructure is observed from a dense equiaxed structure at low pressures to distinctive columns with reduced atomic density at the column walls at higher pressures. The preparation of nearly stress-free dense nanocrystalline films is demonstrated.

  9. Amorphous stainless steel coatings prepared by reactive magnetron-sputtering from austenitic stainless steel targets

    NASA Astrophysics Data System (ADS)

    Cusenza, Salvatore; Schaaf, Peter

    2009-01-01

    Stainless steel films were reactively magnetron sputtered in argon/methane gas flow onto oxidized silicon wafers using austenitic stainless-steel targets. The deposited films of about 200 nm thickness were characterized by conversion electron Mössbauer spectroscopy, magneto-optical Kerr-effect, X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectrometry, atomic force microscopy, corrosion resistance tests, and Raman spectroscopy. These complementary methods were used for a detailed examination of the carburization effects in the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of the substrate temperature and of post vacuum-annealing were examined to achieve a comprehensive understanding of the carburization process and phase formation.

  10. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  11. Aluminium nitride piezoelectric thin films reactively deposited in closed field unbalanced magnetron sputtering for elevated temperature 'smart' tribological applications

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood

    "Smart" high temperature piezoelectric aluminum nitride (AlN) thin films were synthesized by reactive magnetron sputtering using DC; pulsed-DC, and deep oscillation modulated pulsed power (DOMPP) systems on variety of substrate materials. Process optimization was performed to obtain highly c-axis texture films with improved piezoelectric response via studying the interplay between process parameters, microstructure and properties. AlN thin films were sputtered with DC and pulsed-DC systems to investigate the effect of various deposition parameters such as reactive gas ratio, working pressure, target power, pulsing frequency, substrate bias, substrate heating and seed layers on the properties and performance of the film device. The c-axis texture, orientation, microstructure, and chemical composition of AlN films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. Thin films with narrow AlN-(002) rocking curve of 2.5° were obtained with preliminary studies of DOMPP reactive sputtering. In-situ high temperature XRD showed excellent thermal stability and oxidation resistance of AlN films up to 1000 °C. AlN films with optimized processing parameters yielded an inverse piezoelectric coefficient, d33 of 4.9 pm/V close to 90 percent of its theoretical value.

  12. Distance-dependent plasma composition and ion energy in high power impulse magnetron sputtering

    SciTech Connect

    Ehiasarian, Arutiun P; Andersson, Joakim; Anders, André

    2010-04-18

    The plasma composition of high power impulse magnetron sputtering (HIPIMS) has been studied for titanium and chromium targets using a combined energy analyser and quadrupole mass spectrometer. Measurements were done at distances from 50 to 300 mm from the sputtering target. Ti and Cr are similar in atomic mass but have significantly different sputter yields, which gives interesting clues on the effect of the target on plasma generation and transport of atoms. The Ti and Cr HIPIMS plasmas operated at a peak target current density of ~;;0.5 A cm-2. The measurements of the argon and metal ion content as well as the ion energy distribution functions showed that (1) singly and doubly charged ions were found for argon as well as for the target metal, (2) the majority of ions were singly charged argon for both metals at all distances investigated, (3) the Cr ion density was maintained to distances further from the target than Ti. Gas rarefaction was identified as a main factor promoting transport of metal ions, with the stronger effect observed for Cr, the material with higher sputter yield. Cr ions were found to displace a significant portion of the gas ions, whereas this was less evident in the Ti case. The observations indicate that the presence of metal vapour promotes charge exchange and reduces the electron temperature and thereby practically prevents the production of Ar2+ ions near the target. The content of higher charge states of metal ions depends on the probability of charge exchange with argon.

  13. Natural fiber composites with EMI shielding function fabricated using VARTM and Cu film magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Xia, Changlei; Ren, Han; Shi, Sheldon Q.; Zhang, Hualiang; Cheng, Jiangtao; Cai, Liping; Chen, Kathleen; Tan, Hwa-Shen

    2016-01-01

    To fabricate kenaf fiber composites with electromagnetic interference (EMI) shielding function, the technique of vacuum-assisted resin transfer molding (VARTM) and Cu film magnetron sputtering were employed. The EMI shielding effectiveness (SE) and composite surface characteristics were examined with PNA Network Analyzer, Quanta 200 environmental scanning electron microscope and OCA20 contact angle meter. After being Cu-sputter coated for 0.5 h, 1 h, 2 h, and 3 h, the EMI SE values were increased to be 23.8 dB, 32.5 dB, 43.3 dB, and 48.3 dB, which denoted 99.5799%, 99.9437%, 99.9953%, or 99.9985% incident signal was blocked, respectively. The SEM observations revealed that the smoother surface of the composites was obtained by longer time sputtering, resulting in the SE improvement. The contact angle increased from 49.6° to 129.5° after 0.5 h sputtering, which indicated that the coated Cu film dramatically improved the hydrophobic property of composite. When the coating time increased to 3 h, the contact angle decreased to 51.0° because the composite surface roughness decreased with the increase in coating time.

  14. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  15. Growth of Bi2O3 nanocones over large areas by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tien, Li-Chia; Liou, Ying-Hong

    2015-08-01

    Bismuth oxide (Bi2O3) is a multi-functional oxide semiconductor with various properties of interest such as high reflective index, high photoconductive response, luminescence and high oxygen-ion conductivity, potentially useful as optical coatings, electrodes of solid oxide fuel cells (SOFC), supercapacitors, visible-light activated photocatalysts, and gas sensors. Large areas of bismuth oxide (Bi2O3) nanocones were grown onto Si(001) substrates by magnetron sputtering. The samples were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoluminescence (PL). The obtained tapered nanostructures consist of high-density nanocones with diameters approximately 70-130 nm and lengths of 1-3 μm. XRD results reveal that the Bi2O3 nanocones can undergo a phase transition from the α to the β phase at growth temperatures over 450°C. This phase transition was confirmed by TEM and PL. The growth mechanism of Bi2O3 nanocones was identified as grain boundary-assisted growth, in which a Bi seeding layer is crucial to the formation of the nanostructures. The results herein suggest that introducing a surface seeding layer may provide an effective way to grow various 1D nanostructures over large areas in high yield by magnetron sputtering.

  16. Structure evolution of magnetron sputtered TiO{sub 2} thin films

    SciTech Connect

    Mraz, Stanislav; Schneider, Jochen M.

    2011-01-15

    The structure evolution of TiO{sub 2} thin films deposited by rf and dc magnetron sputtering onto nonintentionally heated, floating, glass and Si (100) substrates was investigated. As the total pressure was varied from 0.15 to 4.0 Pa, corresponding to the pressure-distance product values from 10.5 to 280 Pa mm, rutile, anatase, and a mixture thereof were deposited. The pressure-distance induced changes in ion energy were quantified by probing the ion energy distribution functions. The ion energy during synthesis was additionally varied by applying a substrate bias potential ranging from floating to -100 V revealing a similar phase formation characteristic. While the structure evolution of the TiO{sub 2} thin films reported in the literature exhibits a rather complex dependence on the process parameters, a simple correlation between the structure evolution and the ratio between the ion energy flux and the deposition flux was identified here. Phase pure anatase films were grown below 540 eV/Ti atom and phase pure rutile films were grown above 1000 eV/Ti atom. The here presented data suggest that the ratio between the ion energy flux and the deposition flux ratio defines the phase formation of TiO{sub 2} thin films during magnetron sputtering.

  17. Studying of nanocomposite films’ structure and properties obtained by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tleukenov, Y. O.; Plotnikov, S. V.; Erdybaeva, N. K.; Pogrebnyak, A. D.

    2016-02-01

    Various approaches to creating multicomponent na-nocomposite coatings of high and superhigh hardness (from 30 to 100 ± 120 GPa) are reviewed with particular emphasis placed on mechanisms underlying the increase in hardness in thin coatings. Nanocomposite Nb-Al-N films fabricated by magnetron sputtering were researched in this work. Two stable crystalline structural states were found in the films: NbNch and solid solution B1-NbxAl1-xNyO1-y, and also an amorphous component associated with aluminum oxynitride with reactive magnetron sputtering. A relationship of substructural characteristics sensitivity with the current and nanohardness and Knoop hardness characteristic was determined in this paper. Recent changes in the range of 29-33.5 GPa and 46-48 GPa, respectively. Initial principle calculations of NbN and Nb2AlN phases and NbN/AlN heterostructures were carried out for the interpretation of the results. Deposited nanocomposite films with the given mechanical properties may be used as wear resistant or protective coatings. On the basis of these results, it can be assumed that two stable crystalline structural states were found in the films: B1-NbNx and solid solution with a composition close to the B1-Nb0-67Al0-33N. The films also contain an amorphous component associated with aluminum nitride.

  18. p-type semiconducting Cu2O-CoO thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Suzuki, Shingo; Miyata, Toshihiro; Minami, Tadatsugu

    2003-07-01

    The preparation by magnetron sputtering of p-type semiconducting thin films consisting of a multicomponent oxide composed of Cu oxide and Co oxide is described. The electrical, optical, and crystallographical properties of films deposited by rf magnetron sputtering using (Cu2O)1-x-(CoO)x powder targets were strongly dependent on not only the deposition condition but also the calcination condition as well as the CoO content of the targets. These properties drastically changed in films prepared with a CoO content around 90 mol %. All prepared films, i.e., CoO content in the range from 0 to 100 mol %, were found to be p type, or positive hole conductors, as evidenced from the Seebeck effect: Resistivities in the range from 103 to 10-3 Ω cm. A hole concentration on the order of 1016 cm-3 and a mobility on the order of 10-1 cm2/V s were obtained in an amorphous multicomponent oxide film prepared with a CoO content of 50 mol %. Fabricated thin-film pin heterojunction diodes consisting of a p-type high-resistance multicomponent oxide combined with undoped ZnO and n-type Al-doped ZnO exhibited a rectifying current-voltage characteristic.

  19. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    SciTech Connect

    Purandare, Yashodhan Ehiasarian, Arutiun; Hovsepian, Papken; Santana, Antonio

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  20. Continuous and nanostructured TiO2 films grown by dc sputtering magnetron.

    PubMed

    Sánchez, O; Vergara, L; Font, A Climent; de Melo, O; Sanz, R; Hernández-Vélez, M

    2012-12-01

    The growth of Anatase nanostructured films using dc reactive magnetron sputtering and post-annealing treatment is reported. TiO2 has been deposited on Porous Anodic Alumina Films used as templates which were previously grown in phosphoric acid solution and etched to modify their pore diameters. This synthesis via results in the formation of vertically aligned and spatially ordered TiO2 nanostructures replicating the underlying template. Previously, the growth optimization of TiO2 thin films deposited by dc magnetron sputtering on flat silicon substrates was done. The crystalline structure and Ti in-depth concentration profile were determined by grazing incidence X-ray diffraction and Rutherford backscattering spectrometry, respectively. The surface morphology of the samples was explored by mean of a Field Emission Gun scanning electron microscope. Optical properties of the nanostructured samples were studied by using the reflectance spectra received in the UV-visible range. In these spectra different band gap values and complex light absorption features were observed. PMID:23447970

  1. Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices

    NASA Astrophysics Data System (ADS)

    Drozdov, Yu. N.; Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.; Yunin, P. A.

    2015-11-01

    We consider the main factors determining the growth of YBa2Cu3O7-δ high- T c superconductor films during magnetron sputtering in the planar axial geometry. Special attention is paid to the increase of the growth rate of the films suitable for superconductor electronics devices. Magnetron sputtering is used for obtaining YBa2Cu3O7-δ films with high structural and electrophysical characteristics for a growth rate up to 200 nm/h, which were used in constructing microwave disk resonators and long Josephson junctions on bicrystal substrates. The unloaded Q factor of cavities exceeds 80000 at a frequency of 7.1 GHz at a temperature of 77 K, which corresponds to the best results in this field. Josephson junction of length 50-350 μm are characterized by critical current density j c = 12-33 kA/cm2 at T = 77 K and j c = 93-230 kA/cm2 at T = 6 K in zero magnetic field. The characteristic voltage I c R n is 0.8-1.96 mV.

  2. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

    NASA Astrophysics Data System (ADS)

    Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

    2016-05-01

    Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  3. Study on the effect of target on plasma parameters of magnetron sputtering discharge plasma

    SciTech Connect

    Saikia, P.; Kakati, B.; Saikia, B. K.

    2013-10-15

    In this study, the effect of magnetron target on different plasma parameters of Argon/Hydrogen (Ar - H{sub 2}) direct current (DC) magnetron discharge is examined. Here, Copper (Cu) and Chromium (Cr) are used as magnetron targets. The value of plasma parameters such as electron temperature (kT{sub e}), electron density (N{sub e}), ion density (N{sub i}), degree of ionization of Ar, and degree of dissociation of H{sub 2} for both the target are studied as a function of input power and hydrogen content in the discharge. The plasma parameters are determined by using Langmuir probe and Optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. The obtained results show that electron and ion density decline with gradual addition of Hydrogen in the discharge and increase with rising input power. It brings significant changes on the degree of ionization of Ar and dissociation of H{sub 2}. The enhanced value of electron density (N{sub e}), ion density (N{sub i}), degree of Ionization of Ar, and degree of dissociation of H{sub 2} for Cr compared to Cu target is explained on the basis of it's higher Ion Induced Secondary Electron Emission Coefficient (ISEE) value.

  4. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, M.-C.; Chang, L.-S.; Lin, H. C.

    2008-03-01

    Titanium oxynitride (TiN xO y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN xO y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm 2 to 7 W/cm 2. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN xO y films deposited at power densities above 4 W/cm 2 show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN xO y films reach values as low as 0.98 g/m 2-day-atm and 0.60 cm 3/m 2-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al 2O 3 barrier films. Therefore, TiN xO y films are potential candidates to be used as a gas permeation barrier for PET substrate.

  5. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  6. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  7. High power impulse magnetron sputtering and related discharges: scalable plasma sources for plasma-based ion implantation and deposition

    SciTech Connect

    Anders, Andre

    2009-09-01

    High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using `gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated.

  8. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    SciTech Connect

    Zhang, Xiaozhi; Yue, Zhenxing Meng, Siqin; Yuan, Lixin

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  9. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  10. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties

    SciTech Connect

    Borges, Joel Vaz, Filipe; Marques, Luis; Martin, Nicolas

    2014-03-15

    In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtaining different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.