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Sample records for metal-insulator phase transition

  1. Chiral phase transition in lattice QCD as a metal-insulator transition

    SciTech Connect

    Garcia-Garcia, Antonio M.; Osborn, James C.

    2007-02-01

    We investigate the lattice QCD Dirac operator with staggered fermions at temperatures around the chiral phase transition. We present evidence of a metal-insulator transition in the low lying modes of the Dirac operator around the same temperature as the chiral phase transition. This strongly suggests the phenomenon of Anderson localization drives the QCD vacuum to the chirally symmetric phase in a way similar to a metal-insulator transition in a disordered conductor. We also discuss how Anderson localization affects the usual phenomenological treatment of phase transitions a la Ginzburg-Landau.

  2. Approximating metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Danieli, Carlo; Rayanov, Kristian; Pavlov, Boris; Martin, Gaven; Flach, Sergej

    2015-12-01

    We consider quantum wave propagation in one-dimensional quasiperiodic lattices. We propose an iterative construction of quasiperiodic potentials from sequences of potentials with increasing spatial period. At each finite iteration step, the eigenstates reflect the properties of the limiting quasiperiodic potential properties up to a controlled maximum system size. We then observe approximate Metal-Insulator Transitions (MIT) at the finite iteration steps. We also report evidence on mobility edges, which are at variance to the celebrated Aubry-André model. The dynamics near the MIT shows a critical slowing down of the ballistic group velocity in the metallic phase, similar to the divergence of the localization length in the insulating phase.

  3. The metal-insulator phase transition in the strained GdBiTe3

    NASA Astrophysics Data System (ADS)

    Van Quang, Tran; Kim, Miyoung

    2013-05-01

    In this work, we investigated the electronic structures and magnetic properties of the GdBiTe3 alloy employing a first-principles all-electron density-functional approach, aiming to understand the magnetic phase stability and electronic structure dependences on the exchange correlation potential and the strain. The results show that the ferromagnetic phase is energetically more stable over the paramagnetic phase and the metal-insulator phase transition occurs upon the lattice distortion via the strain along the perpendicular c direction, which is not influenced by the strength of correlation energy introduced to describe the localized f orbitals. Thermoelectric transport properties are also investigated to reveal that the compressive strain markedly enhances the Seebeck coefficient, which is reduced in comparison with the Bismuth telluride due to the Gd doping.

  4. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

    PubMed

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  5. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    PubMed Central

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-01-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows. PMID:27033314

  6. Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

    NASA Astrophysics Data System (ADS)

    Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

    2016-04-01

    Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

  7. Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl.

    PubMed

    Naka, Takashi; Nikitin, Artem M; Pan, Yu; de Visser, Anne; Nakane, Takayuki; Ishikawa, Fumihiro; Yamada, Yuh; Imai, Motoharu; Matsushita, Akiyuki

    2016-07-20

    We report the magnetism and transport properties of the Heusler compound Fe2+x V1-x Al at  -0.10  ⩽  x  ⩽  0.20 under pressure and a magnetic field. A metal-insulator quantum phase transition occurred at x  ≈  -0.05. Application of pressure or a magnetic field facilitated the emergence of finite zero-temperature conductivity σ 0 around the critical point, which scaled approximately according to the power law (P  -  P c ) (γ) . At x  ⩽  -0.05, a localized paramagnetic spin appeared, whereas above the ferromagnetic quantum critical point at x  ≈  0.05, itinerant ferromagnetism was established. At the quantum critical points at x  =  -0.05 and 0.05, the resistivity and specific heat exhibited singularities characteristic of a Griffiths phase appearing as an inhomogeneous electronic state. PMID:27218143

  8. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    PubMed Central

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-01-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

  9. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

    NASA Astrophysics Data System (ADS)

    Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

    2016-03-01

    Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.

  10. First-order metal-insulator transition not accompanied by the structural phase transition observed in VO2-based devices

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Chae, Byung-Gyu; Kim, Bong-Jun; Lee, Yong-Wook; Yun, Sun-Jin; Kang, Kwang-Yong

    2006-03-01

    An abrupt first-order metal-insulator transition (MIT) is observed during the application of a switching pulse voltage to VO2-based two-terminal devices. When the abrupt MIT occurs, the structural phase transition (SPT) is investigated by a micro- Raman spectroscopy and a micro-XRD. The result shows that the MIT is not accompanied with the structural phase transition (SPT); the abrupt MIT is prior to the SPT. Moreover, any switching pulse over a threshold voltage of 7.1 V for the MIT enabled the device material to transform efficiently from an insulator to a metal. The measured delay time from the source switching pulse to an induced MIT pulse is an order of 20 nsec which is much less than a delay time of about one msec deduced by thermal model. This indicates that the first-order MIT does not occur due to thermal. We think this MIT is the Mott transition. (Reference: New J. Phys. 6 (1994) 52 (www.njp.org), Appl. Phys. Lett. 86 (2005) 242101, Physica B 369 (2005. December) xxxx)

  11. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    PubMed Central

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems. PMID:26783076

  12. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation

    NASA Astrophysics Data System (ADS)

    Yamin, Tony; Strelniker, Yakov M.; Sharoni, Amos

    2016-01-01

    Many strongly correlated transition metal oxides exhibit a metal-insulator transition (MIT), the manipulation of which is essential for their application as active device elements. However, such manipulation is hindered by lack of microscopic understanding of mechanisms involved in these transitions. A prototypical example is VO2, where previous studies indicated that the MIT resistance change correlate with changes in carrier density and mobility. We studied the MIT using Hall measurements with unprecedented resolution and accuracy, simultaneously with resistance measurements. Contrast to prior reports, we find that the MIT is not correlated with a change in mobility, but rather, is a macroscopic manifestation of the spatial phase separation which accompanies the MIT. Our results demonstrate that, surprisingly, properties of the nano-scale spatially-separated metallic and semiconducting domains actually retain their bulk properties. This study highlights the importance of taking into account local fluctuations and correlations when interpreting transport measurements in highly correlated systems.

  13. Metal Insulator transition in Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

    2012-02-01

    MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

  14. Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 films

    NASA Astrophysics Data System (ADS)

    Théry, V.; Boulle, A.; Crunteanu, A.; Orlianges, J. C.; Beaumont, A.; Mayet, R.; Mennai, A.; Cosset, F.; Bessaudou, A.; Fabert, M.

    2016-05-01

    The metal-insulator switching characteristics of VO2 play a crucial role in the performances of VO2-based devices. In this paper we study high-quality (010)-oriented epitaxial films grown on (001) sapphire substrates by means of electron-beam evaporation and investigate the role of interface defects and thermal strain on the parallel evolution of the metal-insulator transition (MIT) and structural phase transition (SPT) between the monoclinic (insulator) and rutile (metal) phases. It is demonstrated that the highly-mismatched VO2/Al2O3 interface promotes a domain-matching epitaxial growth process where the film grows in a strain-relaxed state and the lattice distortions are confined at the interface in regions with limited spatial extent. Upon cooling down from the growth temperature, tensile strain is stored in the films as a consequence of the thermal expansion mismatch between VO2 and Al2O3 . The thinnest films exhibit the highest level of tensile strain in the interfacial plane resulting in a shift of both the MIT and the SPT temperatures towards higher values, pointing to a stabilization of the monoclinic/insulating phase. Concomitantly, the electrical switching characteristics are altered (lower resistivity ratio and broader transition) as a result of the presence of structural defects located at the interface. The SPT exhibits a similar evolution with, additionally, a broader hysteresis due to the formation of an intermediate, strain-stabilized phase in the M1-R transition. Films with thickness ranging between 100-300 nm undergo a partial strain relaxation and exhibit the best performances, with a sharp (10°C temperature range) and narrow (hysteresis <4°C) MIT extending over more than four orders of magnitude in resistivity (6 ×104 ).

  15. Dynamic phase coexistence and non-Gaussian resistance fluctuations in VO2 near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Samanta, Sudeshna; Raychaudhuri, A. K.; Zhong, Xing; Gupta, A.

    2015-11-01

    We have carried out an extensive investigation on the resistance fluctuations (noise) in an epitaxial thin film of VO2 encompassing the metal-insulator transition (MIT) region to investigate the dynamic phase coexistence of metal and insulating phases. Both flicker noise as well as the Nyquist noise (thermal noise) were measured. The experiments showed that flicker noise, which has a 1 /f spectral power dependence, evolves with temperature in the transition region following the evolution of the phase fractions and is governed by activated kinetics. Importantly, closer to the insulating end of the transition, when the metallic phase fraction is low, the magnitude of the noise shows an anomaly and a strong non-Gaussian component of noise develops. In this region, the local electron temperature (as measured through the Nyquist noise thermometry) shows a deviation from the equilibrium bath temperature. It is proposed that this behavior arises due to current crowding where a substantial amount of the current is carried through well separated small metallic islands leading to a dynamic correlated current path redistribution and an enhanced effective local current density. This leads to a non-Gaussian component to the resistance fluctuation and an associated local deviation of the electron temperature from the bath. Our experiment establishes that phase coexistence leads to a strong inhomogeneity in the region of MIT that makes the current transport strongly inhomogeneous and correlated.

  16. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

    PubMed

    Hou, Jiwei; Wang, Xi; Fu, Deyi; Ko, Changhyun; Chen, Yabin; Sun, Yufei; Lee, Sangwook; Wang, Kevin X; Dong, Kaichen; Sun, Yinghui; Tongay, Sefaattin; Jiao, Liying; Yao, Jie; Liu, Kai; Wu, Junqiao

    2016-08-01

    The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an "active," reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2 ). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors. PMID:27335137

  17. Synchronization of pairwise-coupled, identical, relaxation oscillators based on metal-insulator phase transition devices: A model study

    NASA Astrophysics Data System (ADS)

    Parihar, Abhinav; Shukla, Nikhil; Datta, Suman; Raychowdhury, Arijit

    2015-02-01

    Computing with networks of synchronous oscillators has attracted wide-spread attention as novel materials and device topologies have enabled realization of compact, scalable and low-power coupled oscillatory systems. Of particular interest are compact and low-power relaxation oscillators that have been recently demonstrated using MIT (metal-insulator-transition) devices using properties of correlated oxides. Further the computational capability of pairwise coupled relaxation oscillators has also been shown to outperform traditional Boolean digital logic circuits. This paper presents an analysis of the dynamics and synchronization of a system of two such identical coupled relaxation oscillators implemented with MIT devices. We focus on two implementations of the oscillator: (a) a D-D configuration where complementary MIT devices (D) are connected in series to provide oscillations and (b) a D-R configuration where it is composed of a resistor (R) in series with a voltage-triggered state changing MIT device (D). The MIT device acts like a hysteresis resistor with different resistances in the two different states. The synchronization dynamics of such a system has been analyzed with purely charge based coupling using a resistive (RC) and a capacitive (CC) element in parallel. It is shown that in a D-D configuration symmetric, identical and capacitively coupled relaxation oscillator system synchronizes to an anti-phase locking state, whereas when coupled resistively the system locks in phase. Further, we demonstrate that for certain range of values of RC and CC, a bistable system is possible which can have potential applications in associative computing. In D-R configuration, we demonstrate the existence of rich dynamics including non-monotonic flows and complex phase relationship governed by the ratios of the coupling impedance. Finally, the developed theoretical formulations have been shown to explain experimentally measured waveforms of such pairwise coupled

  18. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  19. Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.

    PubMed

    Shekhawat, Ashivni; Papanikolaou, Stefanos; Zapperi, Stefano; Sethna, James P

    2011-12-30

    Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones. PMID:22243320

  20. Anderson localization effects near the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Bragança, Helena; Aguiar, M. C. O.; Vučičević, J.; Tanasković, D.; Dobrosavljević, V.

    2015-09-01

    The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

  1. Cu(Ir1 − xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    PubMed Central

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-01-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 − xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states. PMID:24518384

  2. Cu(Ir1 - xCrx)2S4: a model system for studying nanoscale phase coexistence at the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Božin, E. S.; Knox, K. R.; Juhás, P.; Hor, Y. S.; Mitchell, J. F.; Billinge, S. J. L.

    2014-02-01

    Increasingly, nanoscale phase coexistence and hidden broken symmetry states are being found in the vicinity of metal-insulator transitions (MIT), for example, in high temperature superconductors, heavy fermion and colossal magnetoresistive materials, but their importance and possible role in the MIT and related emergent behaviors is not understood. Despite their ubiquity, they are hard to study because they produce weak diffuse signals in most measurements. Here we propose Cu(Ir1 - xCrx)2S4 as a model system, where robust local structural signals lead to key new insights. We demonstrate a hitherto unobserved coexistence of an Ir4+ charge-localized dimer phase and Cr-ferromagnetism. The resulting phase diagram that takes into account the short range dimer order is highly reminiscent of a generic MIT phase diagram similar to the cuprates. We suggest that the presence of quenched strain from dopant ions acts as an arbiter deciding between the competing ground states.

  3. Distinctive Finite Size Effects on the Phase Diagram and Metal-insulator Transitions of Tungsten-doped Vanadium(IV) Oxide

    SciTech Connect

    L Whittaker; T Wu; C Patridge; S Ganapathy; S Banerjee

    2011-12-31

    The influence of finite size in altering the phase stabilities of strongly correlated materials gives rise to the interesting prospect of achieving additional tunability of solid-solid phase transitions such as those involved in metal-insulator switching, ferroelectricity, and superconductivity. We note here some distinctive finite size effects on the relative phase stabilities of insulating (monoclinic) and metallic (tetragonal) phases of solid-solution W{sub x}V{sub 1-x}O{sub 2}. Ensemble differential scanning calorimetry and individual nanobelt electrical transport measurements suggest a pronounced hysteresis between metal {yields} insulator and insulator {yields} metal phase transformations. Both transitions are depressed to lower critical temperatures upon the incorporation of substitutional tungsten dopants but the impact on the former transition seems far more prominent. In general, the depression in the critical temperatures upon tungsten doping far exceeds corresponding values for bulk W{sub x}V{sub 1-x}O{sub 2} of the same composition. Notably, the depression in phase transition temperature saturates at a relatively low dopant concentration in the nanobelts, thought to be associated with the specific sites occupied by the tungsten substitutional dopants in these structures. The marked deviations from bulk behavior are rationalized in terms of a percolative model of the phase transition taking into account the nucleation of locally tetragonal domains and enhanced carrier delocalization that accompany W{sup 6+} doping in the W{sub x}V{sub 1-x}O{sub 2} nanobelts.

  4. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions.

    PubMed

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-14

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases. PMID:27083708

  5. Effective Hamiltonians for correlated narrow energy band systems and magnetic insulators: Role of spin-orbit interactions in metal-insulator transitions and magnetic phase transitions

    NASA Astrophysics Data System (ADS)

    Chakraborty, Subrata; Vijay, Amrendra

    2016-04-01

    Using a second-quantized many-electron Hamiltonian, we obtain (a) an effective Hamiltonian suitable for materials whose electronic properties are governed by a set of strongly correlated bands in a narrow energy range and (b) an effective spin-only Hamiltonian for magnetic materials. The present Hamiltonians faithfully include phonon and spin-related interactions as well as the external fields to study the electromagnetic response properties of complex materials and they, in appropriate limits, reduce to the model Hamiltonians due to Hubbard and Heisenberg. With the Hamiltonian for narrow-band strongly correlated materials, we show that the spin-orbit interaction provides a mechanism for metal-insulator transition, which is distinct from the Mott-Hubbard (driven by the electron correlation) and the Anderson mechanism (driven by the disorder). Next, with the spin-only Hamiltonian, we demonstrate the spin-orbit interaction to be a reason for the existence of antiferromagnetic phase in materials which are characterized by a positive isotropic spin-exchange energy. This is distinct from the Néel-VanVleck-Anderson paradigm which posits a negative spin-exchange for the existence of antiferromagnetism. We also find that the Néel temperature increases as the absolute value of the spin-orbit coupling increases.

  6. The metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Cobden, David

    2009-05-01

    Solid materials in which electron-electron correlations are strong can exhibit dramatic phase transitions, at which an abrupt change in the electronic properties occurs with a small accompanying distortion of the lattice. Such transitions could be harnessed to make electronic or optoelectronic devices or sensors embodying different principles from those in present semiconductor technology. A famous example is the metal-insulator transition in vanadium dioxide which occurs at 67 ^oC at ambient pressure. VO2 is a stable, strong material with a simple structure. Unfortunately though, applications and methodical studies of this and other phase transitions are hindered by broadening, hysteresis and mechanical degradation at the transition, caused by the inevitable domain structure. Nanostructures of the material which are smaller than the characteristic domain size do not show these problems. Using devices made from nanobeams of VO2 we have been able to achieve good control of the transition and to determine a number of its properties for the first time. For instance, we find that the metallic phase can be supercooled by more than 50 ^oC; that the resistivity of the insulator in coexistence with the metal is independent of temperature; and that the transition occurs via the intermediate M2 phase. We also study nanoelectromechanical effects where reversible buckling of the nanobeam is coupled to the phase transition, and we investigate methods of controlling the phase transition, for example using a gate voltage.

  7. Real-Time Structural and Electrical Characterization of Metal-Insulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters.

    PubMed

    Kim, Min-Woo; Ha, Sung-Soo; Seo, Okkyun; Noh, Do Young; Kim, Bong-Joong

    2016-07-13

    Single-crystal VO2 wires have gained tremendous popularity for enabling the study of the fundamental properties of the metal-insulator transition (MIT); however, it remains tricky to precisely measure the intrinsic properties of the transitional phases with controlled wire-growth properties, such as diameter. Here, we report a facile method for growing VO2 wires with controlled diameters by separating the formation of the liquidus V2O5 seed droplets from the evolution of the VO2 wire using oxygen gas. The kinetic analyses suggest that the growth proceeds via the VS (vapor-solid) mechanism, whereas the droplet determines the size and the location of the wire. In situ Raman spectroscopy combined with analyses of the electrical properties of an individual wire allowed us to construct a diameter-temperature phase diagram from three initial phases (i.e., M1, T, and M2), which were created by misfit stress from the substrate and were preserved at room temperature. We also correlated this relation with resistivity-diameter and activation energy-diameter relations supported by theoretical modeling. These carefully designed approaches enabled us to elucidate the details of the phase transitions over a wide range of stress conditions, offering an opportunity to quantify relevant thermodynamic and electronic parameters (including resistivities, activation energies, and energy barriers of the key insulating phases) and to explain the intriguing behaviors of the T phase during the MIT. PMID:27253750

  8. Second critical point in first order metal-insulator transitions.

    PubMed

    Kostadinov, Ivan Z; Patton, Bruce R

    2008-11-28

    For first order metal-insulator transitions we show that, together with the dc conductance zero, there is a second critical point where the dielectric constant becomes zero and further turns negative. At this point the metallic reflectivity sharply increases. The two points can be separated by a phase separation state in a 3D disordered system but may tend to merge in 2D. For illustration we evaluate the dielectric function in a simple effective medium approximation and show that at the second point it turns negative. We reproduce the experimental data on a typical Mott insulator such as MnO, demonstrating the presence of the two points clearly. We discuss other experiments for studies of the phase separation state and a similar phase separation in superconductors with insulating inclusions. PMID:19113498

  9. Epitaxial growth of in-plane-dimerized, single phase NbO2 thin films for metal-insulator transition applications

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Hadamek, Tobias; O'Hara, Andy; Demkov, Alexander

    2015-03-01

    NbO2 is a exhibits a metal-insulator transition that may have potential applications in electronic devices. The strong conductivity change in NbO2 occurs along the dimerization direction and for devices utilizing NbO2 as a channel material (in-plane transport) such as transistors, one would like the dimerization direction to be in the plane of the film. The electrical properties of Nb oxides are strongly dependent on the oxidation state of Nb. It is therefore critical to be able to control the oxidation state of Nb during growth. Here, we describe the epitaxial growth of in-plane-dimerized NbO2 using molecular beam epitaxy on a variety of substrates (STO, LSAT, MgO, BTO and GaN), growth temperatures, and oxygen-to-niobium flux ratios. We show that the particular substrate used significantly affects the bulk and surface crystallinity, as well as the degree of oxidation. We also show the evolution of the valence and core level photoemission spectra of Nb oxides as a function of oxygen-to-niobium flux ratio and point out the optimum growth conditions to achieve phase-pure, epitaxial NbO2 films.

  10. Quantum capacitance in thin film vanadium dioxide metal insulator transition

    NASA Astrophysics Data System (ADS)

    Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Torres, David; Wang, Tongyu; Sepulveda, Nelson; Huang, Jian

    We present capacitance measurements of the electronic density of states performed in high quality vanadium dioxide (VO2) thin films on sapphire (Al2O3) substrate. These films show the expected metal insulator transition near 60 °C with resistivity changing by 3 orders of magnitude with a hysteresis of 10 °C. To make a capacitive probe, a gate is suspended above the film surface using a flip-chip method with microfabricated supports. The geometric capacitance per-area reached is 40 pF/mm2. Such a large capacitance can be significantly modified by electron interaction and band charging/discharging which appear as an extra term known as the quantum capacitance (Cq). An AC signal applied to the gate allows measurement of the changing density of states (DOS) across the MIT. The DOS abruptly increases as the sample is heated through the transition point. Conversely the low temperature drop of d μ / d n is consistent with an energy gap opening in the insulating phase. These parameters shed light on the transition mechanism. NSF DMR-1105183, NSF ECCS 1306311.

  11. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. PMID:26618885

  12. Metal-insulator transition in films of doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Reich, K. V.; Kramer, Nicolaas J.; Fu, Han; Kortshagen, Uwe R.; Shklovskii, B. I.

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  13. Anderson metal-insulator transitions with classical magnetic impurities

    SciTech Connect

    Jung, Daniel; Kettemann, Stefan

    2014-08-20

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude W{sub c}, in the presence of Heisenberg impurities, W{sub c} is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  14. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan

    2014-08-01

    We study the effects of classical magnetic impurities on the Anderson metal-insulator transition (AMIT) numerically. In particular we find that while a finite concentration of Ising impurities lowers the critical value of the site-diagonal disorder amplitude Wc, in the presence of Heisenberg impurities, Wc is first increased with increasing exchange coupling strength J due to time-reversal symmetry breaking. The resulting scaling with J is compared to analytical predictions by Wegner [1]. The results are obtained numerically, based on a finite-size scaling procedure for the typical density of states [2], which is the geometric average of the local density of states. The latter can efficiently be calculated using the kernel polynomial method [3]. Although still suffering from methodical shortcomings, our method proves to deliver results close to established results for the orthogonal symmetry class [4]. We extend previous approaches [5] by combining the KPM with a finite-size scaling analysis. We also discuss the relevance of our findings for systems like phosphor-doped silicon (Si:P), which are known to exhibit a quantum phase transition from metal to insulator driven by the interplay of both interaction and disorder, accompanied by the presence of a finite concentration of magnetic moments [6].

  15. Metal-insulator transition near a superconducting state

    NASA Astrophysics Data System (ADS)

    Kaveh, M.; Mott, N. F.

    1992-03-01

    We show that when the metal-insulation transition occurs near a superconducting state it results in a different critical behavior from that of amorphous metals or uncompensated doped semiconductors. This difference results from the enhancement of the effective electron-electron interaction caused by fluctuations to the superconducting state. This explains the recent experiments of Micklitz and co-workers on amorphous superconducting mixtures Ga-Ar and Bi-Kr.

  16. The metal-insulator transition in magnetite.

    NASA Technical Reports Server (NTRS)

    Cullen, J. R.; Callen, E.

    1972-01-01

    We describe an electronic model for the low temperature transition in magnetite, in which the average number of electrons on a site is non-integral. The solution of the one-dimensional problem is reviewed, and the connection of the model with the Verwey ordering is discussed. Some of the implication of the three dimensional problem are discussed.

  17. Fluctuations of the order parameter in R 0.55Sr0.45MnO3 manganites near the metal-insulator phase transition

    NASA Astrophysics Data System (ADS)

    Bukhanko, F. N.; Bukhanko, A. F.

    2013-06-01

    The magnetic phase transformations induced by changes of the composition, external magnetic field strength, and temperature in manganites with a nearly half-filled conduction band in the vicinity of the metal-insulator phase transition have been investigated experimentally. It has been found that the substitution of rare-earth ions (Sm) for Nd ions with a larger ionic radius in R 0.55Sr0.45MnO3 manganites leads to a linear decrease in the Curie temperature T C from 270 to 130 K and a transformation of the second-order ferromagnetic (FM) phase transition into a first-order phase transition. The results of measurements of the alternating-current (ac) magnetic susceptibility in the (Nd1 - y Sm y )0.55Sr0.45MnO3 system indicate the existence of a Griffiths-like phase in samples with a samarium concentration y > 0.5 in the temperature range T C < T < T* (where T* ˜ 220 K). For samples with y > 0.5, the magnetization isotherms at temperatures above T C exhibit specific features in the form of reversible metamagnetic phase transitions associated with strong fluctuations of the short-range ferromagnetic order in the system of Mn spins in the high-temperature Griffiths phase consisting of ferromagnetic clusters. According to the results of measurements of the ac magnetic susceptibility in the (Sm1 - y Gd y )0.55Sr0.45MnO3 system for a gadolinium concentration y = 0.5, there is an antiferromagnetic (AFM) phase with an unusually low critical temperature of the spin ordering T N ≊ 48.5 K. An increase in the external static magnetic field at 4.2 K leads to an irreversible induction of the ferromagnetic phase, which is stable in the temperature range 4.2-60 K. In the temperature range 60 K < T < 150 K, there exists a high-temperature Griffiths-like phase consisting of clusters (correlations) with a local charge/orbital ordering. The metastable antiferromagnetic structure is retained in samples with gadolinium concentrations y = 0.6 and 0.7, but it is destroyed with a further

  18. Pure electronic metal-insulator transition at the interface of complex oxides

    PubMed Central

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  19. Pure electronic metal-insulator transition at the interface of complex oxides.

    PubMed

    Meyers, D; Liu, Jian; Freeland, J W; Middey, S; Kareev, M; Kwon, Jihwan; Zuo, J M; Chuang, Yi-De; Kim, J W; Ryan, P J; Chakhalian, J

    2016-01-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change. PMID:27324948

  20. Pure electronic metal-insulator transition at the interface of complex oxides

    NASA Astrophysics Data System (ADS)

    Meyers, D.; Liu, Jian; Freeland, J. W.; Middey, S.; Kareev, M.; Kwon, Jihwan; Zuo, J. M.; Chuang, Yi-De; Kim, J. W.; Ryan, P. J.; Chakhalian, J.

    2016-06-01

    In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

  1. Metal-insulator and charge ordering transitions in oxide nanostructures

    NASA Astrophysics Data System (ADS)

    Singh, Sujay Kumar

    Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase

  2. Anderson metal-insulator transitions with classical magnetic impurities

    NASA Astrophysics Data System (ADS)

    Jung, Daniel; Kettemann, Stefan; Slevin, Keith

    2016-04-01

    We study numerically the effects of classical magnetic impurities on the Anderson metal-insulator transition. We find that a small concentration of Heisenberg impurities enhances the critical disorder amplitude Wc with increasing exchange coupling strength J . The resulting scaling with J is analyzed which supports an anomalous scaling prediction by Wegner due to the combined breaking of time-reversal and spin-rotational symmetry. Moreover, we find that the presence of magnetic impurities lowers the critical correlation length exponent ν and enhances the multifractality parameter α0. The new value of ν improves the agreement with the value measured in experiments on the metal-insulator transition (MIT) in doped semiconductors like phosphor-doped silicon, where a finite density of magnetic moments is known to exist in the vicinity of the MIT. The results are obtained by a finite-size scaling analysis of the geometric mean of the local density of states which is calculated by means of the kernel polynomial method. We establish this combination of numerical techniques as a method to obtain critical properties of disordered systems quantitatively.

  3. Metal-insulator transition in trans-polyacetylene

    NASA Astrophysics Data System (ADS)

    Conwell, E. M.; Mizes, H. A.; Jeyadev, S.

    1989-07-01

    We have calculated the band structure for a chain of doped trans-polyacetylene using the electronic part of the Su-Schrieffer-Heeger Hamiltonian plus the Coulomb potential arising from ions and charged solitons surrounding the chain. The lattice structure used was that determined by x rays for Na-doped polyacetylene. To agree with a number of experimental observations the donated electrons were taken to be in soliton states at all dopant concentrations. In obtaining the potential of a point charge on a chain in the metallic state, the confinement of the free electrons to a chain was taken into account. Because screening depends on the calculated energy levels, specifically on the density of states at the Fermi energy, η(EF), in the metallic state, which, in turn, depend on the potential used to obtain them, self-consistency was required in the calculations. The energy-level structure was found to depend strongly on the ion spacing, conveniently measured in terms of the average spacing a of C-H's along the chain. For ion spacing 5a, characteristic of the Na-ion-rich regions up to an average dopant concentration of ~6%, the chain remained semiconducting. For ion spacing 4a, which appears to characterize the next phase for Na doping, metallic behavior was found for a doped chain length of ~100 sites or more. Self-consistency was fulfilled with η(EF) equal to the value obtained from the saturation spin susceptibility in the metallic state. In addition to sufficiently long chains that the level spacing is comparable to kT, the metal-insulator transition is found to require considerable overlap of electron wave functions on adjacent solitons and a fairly deep potential well. The transition is best described as a Mott transition. Our model predicts that a sample in the metallic state at room temperature becomes semiconducting at lower temperature. Evidence for this is found in the temperature variation of the spin susceptibility and of ESR linewidth. It is argued that

  4. Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2014-03-01

    Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σmi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ⟹ 0, Σmi ˜ n 3/2. Near the MI transition point T c( h) in the applied magnetic field, Σmi ˜ [ T - T c( h)]3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.

  5. Metal-insulator transition in Na{sub x}WO{sub 3}: Photoemission spectromicroscopy study

    SciTech Connect

    Paul, Sanhita Ghosh, Anirudha Raj, Satyabrata

    2014-04-24

    We have investigated the validity of percolation model, which is quite often invoked to explain the metal-insulator transition in sodium tungsten bronzes, Na{sub x}WO{sub 3} by photoelectron spectromicroscopy. The spatially resolved direct spectromicroscopic probing on both the insulating and metallic phases of high quality single crystals of Na{sub x}WO{sub 3} reveals the absence of any microscopic inhomogeneities embedded in the system within the experimental limit. Neither any metallic domains in the insulating host nor any insulating domains in the metallic host have been found to support the validity of percolation model to explain the metal-insulator transition in Na{sub x}WO{sub 3}.

  6. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    NASA Astrophysics Data System (ADS)

    Menges, F.; Dittberner, M.; Novotny, L.; Passarello, D.; Parkin, S. S. P.; Spieser, M.; Riel, H.; Gotsmann, B.

    2016-04-01

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  7. Metal insulator transitions in perovskite SrIrO{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Jeong, Yoon Hee; Kim, Ki-Seok

    2014-12-07

    Understanding of metal insulator transitions in a strongly correlated system, driven by Anderson localization (disorder) and/or Mott localization (correlation), is a long standing problem in condensed matter physics. The prevailing fundamental question would be how these two mechanisms contrive to accomplish emergent anomalous behaviors. Here, we have grown high quality perovskite SrIrO{sub 3} thin films, containing a strong spin orbit coupled 5d element Ir, on various substrates such as GdScO{sub 3} (110), DyScO{sub 3} (110), SrTiO{sub 3} (001), and NdGaO{sub 3} (110) with increasing lattice mismatch, in order to carry out a systematic study on the transport properties. We found that metal insulator transitions can be induced in this system; by either reducing thickness (on best lattice matched substrate) or changing degree of lattice strain (by lattice mismatch between film and substrates) of films. Surprisingly these two pathways seek two distinct types of metal insulator transitions; the former falls into disorder driven Anderson type whereas the latter turns out to be of unconventional Mott-Anderson type with the interplay of disorder and correlation. More interestingly, in the metallic phases of SrIrO{sub 3}, unusual non-Fermi liquid characteristics emerge in resistivity as Δρ ∝ T{sup ε} with ε evolving from 4/5 to 1 to 3/2 with increasing lattice strain. We discuss theoretical implications of these phenomena to shed light on the metal insulator transitions.

  8. Origin of the metal-insulator transition of indium atom wires on Si(111)

    NASA Astrophysics Data System (ADS)

    Kim, Sun-Woo; Cho, Jun-Hyung

    2016-06-01

    As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to Fermi surface nesting. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4 ×1 phase to the low-temperature 8 ×2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the ×2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls-instability-driven CDW formation.

  9. Metal-Insulator Transition in the Hubbard Model: Correlations and Spiral Magnetic Structures

    NASA Astrophysics Data System (ADS)

    Timirgazin, Marat A.; Igoshev, Petr A.; Arzhnikov, Anatoly K.; Irkhin, Valentin Yu.

    2016-03-01

    The metal-insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the t-t^' Hubbard model at half-filling by using both the generalized for the case of spiral order Hartree-Fock approximation (HFA) and Kotliar-Ruckenstein slave-boson approach. It turns out that the magnetic scenario of MIT becomes superior over the non-magnetic one. The electron correlations lead to some suppression of the spiral phases in comparison with HFA. We found the presence of a metallic antiferromagnetic (spiral) phase in the case of three-dimensional lattices.

  10. Metal-insulator transitions in IZO, IGZO, and ITZO films

    SciTech Connect

    Makise, Kazumasa; Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju; Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  11. Thermally driven analog of the Barkhausen effect at the metal-insulator transition in vanadium dioxide

    SciTech Connect

    Huber-Rodriguez, Benjamin; Ji, Heng; Chen, Chih-Wei; Kwang, Siu Yi; Hardy, Will J.; Morosan, Emilia; Natelson, Douglas

    2014-09-29

    The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO{sub 2} material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO{sub 2} powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

  12. Thermal Conductivity and Thermopower near the 2D Metal-Insulator transition, Final Technical Report

    SciTech Connect

    SARACHIK, MYRIAM P

    2015-02-20

    STUDIES OF STRONGLY-INTERACTING 2D ELECTRON SYSTEMS – There is a great deal of current interest in the properties of systems in which the interaction between electrons (their potential energy) is large compared to their kinetic energy. We have investigated an apparent, unexpected metal-insulator transition inferred from the behavior of the temperature-dependence of the resistivity; moreover, detailed analysis of the behavior of the magnetoresistance suggests that the electrons’ effective mass diverges, supporting this scenario. Whether this is a true phase transition or crossover behavior has been strenuously debated over the past 20 years. Our measurements have now shown that the thermoelectric power of these 2D materials diverges at a finite density, providing clear evidence that this is, in fact, a phase transition to a new low-density phase which may be a precursor or a direct transition to the long sought-after electronic crystal predicted by Eugene Wigner in 1934.

  13. Cryogenic microwave imaging of metal-insulator transition in doped silicon

    NASA Astrophysics Data System (ADS)

    Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun

    2011-03-01

    We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases.

  14. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  15. Metal-insulator transition in the Pr substituted Bi-2212 bulk textured crystals

    NASA Astrophysics Data System (ADS)

    Prabhakaran, D.; Subramanian, C.

    1997-02-01

    Bulk textured crystals of Bi 2.2Sr 1.9Ca 1- xPr xCu 2O 8 (0.0 ≤ x ≤ 0.6) were grown by the platinum strip heater floating zone technique. The effect of Pr on the growth and superconducting properties was studied. From the X-ray diffraction studies, variation of lattice constants, phase purity and texturing quantification with respect to Pr substitution were calculated. Variation in the Sr/Ca ratio upon Pr doping was observed. Metal insulator transition was observed in the higher order Pr substituted crystals.

  16. Electronic Structure Evolution across the Peierls Metal-Insulator Transition in a Correlated Ferromagnet

    NASA Astrophysics Data System (ADS)

    Bhobe, P. A.; Kumar, A.; Taguchi, M.; Eguchi, R.; Matsunami, M.; Takata, Y.; Nandy, A. K.; Mahadevan, P.; Sarma, D. D.; Neroni, A.; Şaşıoǧlu, E.; Ležaić, M.; Oura, M.; Senba, Y.; Ohashi, H.; Ishizaka, K.; Okawa, M.; Shin, S.; Tamasaku, K.; Kohmura, Y.; Yabashi, M.; Ishikawa, T.; Hasegawa, K.; Isobe, M.; Ueda, Y.; Chainani, A.

    2015-10-01

    Transition metal compounds often undergo spin-charge-orbital ordering due to strong electron-electron correlations. In contrast, low-dimensional materials can exhibit a Peierls transition arising from low-energy electron-phonon-coupling-induced structural instabilities. We study the electronic structure of the tunnel framework compound K2Cr8O16 , which exhibits a temperature-dependent (T -dependent) paramagnetic-to-ferromagnetic-metal transition at TC=180 K and transforms into a ferromagnetic insulator below TMI=95 K . We observe clear T -dependent dynamic valence (charge) fluctuations from above TC to TMI , which effectively get pinned to an average nominal valence of Cr+3.75 (Cr4 +∶Cr3 + states in a 3 ∶1 ratio) in the ferromagnetic-insulating phase. High-resolution laser photoemission shows a T -dependent BCS-type energy gap, with 2 G (0 )˜3.5 (kBTMI)˜35 meV . First-principles band-structure calculations, using the experimentally estimated on-site Coulomb energy of U ˜4 eV , establish the necessity of strong correlations and finite structural distortions for driving the metal-insulator transition. In spite of the strong correlations, the nonintegral occupancy (2.25 d -electrons/Cr ) and the half-metallic ferromagnetism in the t2 g up-spin band favor a low-energy Peierls metal-insulator transition.

  17. Mesoscopic Metal-Insulator Transition at Ferroelastic Domain Walls in VO2

    SciTech Connect

    Jones, Keith M; Kalinin, Sergei V; Kolmakov, Andrei; Luk'yanchuk, Prof. Igor A.; Meunier, Vincent; Proksch, Roger; Shelton Jr, William Allison; Strelcov, Evgheni; Tselev, Alexander

    2010-01-01

    The novel phenomena induced by symmetry breaking at homointerfaces between ferroic variants in ferroelectric and ferroelastic materials have attracted recently much attention. Using variable temperature scanning microwave microscopy, we demonstrate the mesoscopic strain-induced metal-insulator phase transitions in the vicinity of ferroelastic domain walls in the semiconductive VO2 that nucleated at temperatures as much as 10-12 C below bulk transition, resulting in the formation of conductive channels in the material. Density functional theory is used to rationalize the process low activation energy. This behavior, linked to the strain inhomogeneity inherent in ferroelastic materials, can strongly affect interpretation of phase-transition studies in VO2 and similar materials with symmetry-lowering transitions, and can also be used to enable new generations of electronic devices though strain engineering of conductive and semiconductive regions.

  18. Light scattering by epitaxial VO{sub 2} films near the metal-insulator transition point

    SciTech Connect

    Lysenko, Sergiy Fernández, Felix; Rúa, Armando; Figueroa, Jose; Vargas, Kevin; Cordero, Joseph; Aparicio, Joaquin; Sepúlveda, Nelson

    2015-05-14

    Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.

  19. Cooperative phonon effects in the metal-insulator transitions of manganite and nickelate perovskites

    NASA Astrophysics Data System (ADS)

    Brierley, Richard T.; Guzmán Verri, Gian G.; Littlewood, Peter B.

    Metal-insulator transitions in manganite and nickelate perovskites depend on the competition between the electron kinetic energy, which favors the metallic phase, and the electron-phonon coupling and Coulomb interaction, which favor localization. The size of the A-site cation controls the relative rotation of the octahedral structural units of the perovskite in the range of 0 - 15°. This is accompanied by changes in the metal-insulator transition temperature from 0 - 600K . This effect is commonly attributed to modification in the electron bandwidth from changes in orbital overlap. Although previous theoretical studies of these materials include the electron-phonon interaction, they typically do not consider cooperative phonon effects. Using a phenomenological model of the perovskite structure, we show that the long-range anisotropic forces arising from inter-site phonon interactions are modulated by changes in the octahedral rotation. We demonstrate using statistical mechanical calculations that these changes in the strain interaction can capture the variation in transition temperature with tolerance factor observed in both the manganites and nickelates.

  20. Moderate pressure synthesis of rare earth nickelate with metal-insulator transition using polymeric precursors

    NASA Astrophysics Data System (ADS)

    Napierala, C.; Lepoittevin, C.; Edely, M.; Sauques, L.; Giovanelli, F.; Laffez, P.; VanTedeloo, G.

    2010-07-01

    Rare earth nickelates exhibit a reversible metal-semiconductor phase transition that is, in the infrared range, responsible for a thermo-optical contrast. The state of the art synthesis of these compounds usually requires high oxygen pressure to stabilize Ni in the oxidation state 3 +. In this work, using polymeric precursor associated with moderate pressure annealing, we show that it is possible to obtain fully oxidized rare earth nickelate with metal-insulator transition. Using thermogravimetric analysis, X-ray diffraction and transmission electronic microscopy we compare different samples synthesized at different oxygen pressures and demonstrate their structural similarity. Thermo-optical properties were measured, in the infrared range, using reflectance measurements and confirmed the metal-insulator transition at 60 °C in both samples.TEM observations lead to the conclusion that the structure commonly obtained at 175 bar is perfectly observed in the 20 bar sample without major structural defects. The two samples exhibit a thermochromic behavior and thermo-optical properties of the two samples are equivalent.

  1. Correlation Between Metal-Insulator Transition Characteristics and Electronic Structure Changes in Vanadium Oxide Thin Films

    SciTech Connect

    Ruzmetov,D.; Senanayake, S.; Narayanamurti, V.; Ramanathan, S.

    2008-01-01

    We correlate electron transport data directly with energy band structure measurements in vanadium oxide thin films with varying V-O stoichiometry across the VO2 metal-insulator transition. A set of vanadium oxide thin films were prepared by reactive dc sputtering from a V target at various oxygen partial pressures (O2 p.p.). Metal-insulator transition (MIT) characteristic to VO2 can be seen from the temperature dependence of electrical resistance of the films sputtered at optimal O2 p.p. Lower and higher O2 p.p. result in disappearance of the MIT. The results of the near edge x-ray absorption fine structure spectroscopy of the O K edge in identical VO films are presented. Redistribution of the spectral weight from {sigma}* to {pi}* bands is found in the vanadium oxide films exhibiting stronger VO2 MIT. This is taken as evidence of the strengthening of the metal-metal ion interaction with respect to the metal-ligand and indirect V-O-V interaction in vanadium oxide films featuring sharp MIT. We also observe a clear correlation between MIT and the width and area of the lower {pi}* band, which is likely to be due to the emergence of the d|| band overlapping with {pi}*. The strengthening of this d|| band near the Fermi level only in the vanadium oxide compounds displaying the MIT points out the importance of the role of the d|| band and electron correlations in the phase transition.

  2. Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott and band insulators

    NASA Astrophysics Data System (ADS)

    Omori, Yukiko; Rüegg, Andreas; Sigrist, Manfred

    2014-10-01

    Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott and a band insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both on-site and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.

  3. Buckley Prize Talk: The Suprerconductor-(Metal)-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Kapitulnik, Aharon

    2015-03-01

    While the classical theory of phase transitions has been extraordinarily successful, there are several reasons to exercise caution when applying this approach to the zero temperature superconducting transition. First, experimental identification of the relevant phases requires extrapolation to zero temperature, which becomes complicated, especially when one needs to identify sources of dissipation. In addition, since superconductivity may be highly inhomogeneous as appreciable superconducting order parameter may be concentrated in ``superconducting puddles'' due to disorder and/or spontaneous phase separation, the nature of the quantum phase transition to a superconducting state may be highly anomalous, where the system attempts to optimizes the formation of puddles with the Josephson coupling among them to obtain global superconductivity. In this talk we will review some of the consequences of these considerations, emphasizing the possible emergence of anomalous metallic phases close to the superconductor-insulator transition.

  4. Metal-insulator transitions of bulk and domain-wall states in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, Kentaro

    A family of pyrochlore iridates R2Ir2O7 offers an ideal platform to explore intriguing phases such as topological Mott insulator and Weyl semimetal. Here we report transport and spectroscopic studies on the metal-insulator transition (MIT) induced by the modulations of effective electron correlation and magnetic structures, which is finely tuned by external pressure, chemical substitutions (R = Nd1-x Prx and SmyNd1-y) , and magnetic field. A reentrant insulator-metal-insulator transition is observed near the paramagnetic insulator-metal phase boundary reminiscent of a first-order Mott transition for R = SmyNd1-y compounds (y~0.8). The metallic states on the magnetic domain walls (DWs), which are observed for R = Nd in real space as well as in transport properties, is simultaneously turned into the insulating one. These findings imply that the DW electronic state is intimately linked to the bulk states. For the mixed R = Nd1-x Prx compounds, the divergent behavior of resistivity with antiferromagnetic order is significantly suppressed by applying a magnetic field along [001] direction. It is attributed to the phase transition from the antiferromagnetic insulating state to the novel Weyl (semi-)metal state accompanied by the change of magnetic structure. The present study combined with experiment and theory suggests that there are abundant exotic phases with physical parameters such as electron correlation and Ir-5 d magnetic order pattern. Work performed in collaboration with J. Fujioka, B.-J. Yang, C. Terakura, N. Nagaosa, Y. Tokura (University of Tokyo, RIKEN CEMS), J. Shiogai, A. Tsukazaki, S. Nakamura, S. Awaji (Tohoku University). 1This work was supported by JSPS FIRST Program and Grant-in-Aid for Scientific Research (Grants No. 80609488 and No. 24224009).

  5. Hybridization wave as the cause of the metal-insulator transition in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Park, Hyowon; Marianetti, Chris A.; Millis, Andrew J.

    2012-02-01

    The metal-insulator transition driven by varying rare earth (Re) ion in ReNiO3 has been a longstanding challenge to materials theory. Experimental evidence suggesting charge order is seemingly incompatible with the strong Mott-Hubbard correlations characteristic of transition metals. We present density functional, Hartree-Fock and Dynamical Mean field calculations showing that the origin of the insulating phase is a hybridization wave, in which a two sublattice ordering of the oxygen breathing mode produces two Ni sites with almost identical Ni d-charge densities but very different magnetic moments and other properties. The high temperature crystal structure associated with smaller Re ions such as Lu is shown to be more susceptible to the distortion than the high temperature structure associated with larger Re ions such as La.

  6. Local Peltier-effect-induced reversible metal-insulator transition in VO2 nanowires

    NASA Astrophysics Data System (ADS)

    Takami, Hidefumi; Kanki, Teruo; Tanaka, Hidekazu

    2016-06-01

    We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal-insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.

  7. Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Singh, Sujay; Abtew, Tesfaye A.; Horrocks, Gregory; Kilcoyne, Colin; Marley, Peter M.; Stabile, Adam A.; Banerjee, Sarbajit; Zhang, Peihong; Sambandamurthy, G.

    2016-03-01

    We demonstrate through electrolyte gating measurements of a single nanobeam that the rultile phase of VO2 is electrochemically more reactive than the monoclinic phase. Our results show that the complete suppression of the metal-insulator transition and stabilization of the metallic phase is possible when gate voltage is applied in the rutile metallic phase. The results are discussed based on the formation of oxygen vacancies wherein accommodation of a high concentration of vacancies in the rutile phase selectively stabilizes it by disrupting dimerization of adjacent V-V pairs required for a transition to the monoclinic phase. The creation of oxygen vacancies is proposed to proceed through the oxidation of the electrolyte. Raman spectroscopy data suggest surface metallization upon electrolyte gating with an initial coexistence of insulating monoclinic and metallic domains. The selective electrochemical reactivity of the rutile phase and the resulting defect-induced stabilization of this phase across a vastly expanded temperature window suggest a facile defect engineering route to tune electronic phase transitions.

  8. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    NASA Astrophysics Data System (ADS)

    Akande, Amos A.; Rammutla, Koena E.; Moyo, Thomas; Osman, Nadir S. E.; Nkosi, Steven S.; Jafta, Charl J.; Mwakikunga, Bonex W.

    2015-02-01

    We report on the magnetic property of 0.67-WO3+0.33-VOx mixture film deposit on the corning glass substrate using the chemical sol-gel and atmospheric pressure chemical vapor deposition (APCVD) methods. The XRD and Raman spectroscopy confirm species of both materials, and the morphological studies with FIB-SEM and TEM reveal segregation of W and V atoms. XPS reveals that V4+ from VO2 forms only 11% of the film; V3+ in the form of V2O3 form 1% of the film, 21% is V5+ from V2O5 and 67% is given to W6+ from WO3. The analysis of the ESR data shows some sharp changes in the magnetism near the metal-to-insulator (MIT), which could be theoretically interpreted as the ordering or alignment of electron spins from net moment nature to parallel alignment of magnetic moment. The derivatives of magnetic susceptibility established the thermally induced magnetic property: two distinct transitions of 339 K for heating data and 338 K for cooling data for 151.2 mT field were obtained. Similar results were also obtained for 308.7 mT field, 336 K for heating data and 335 K for cooling data. VSM results confirm a paramagnetic phase with a small amount of magnetically ordered phase.

  9. Disorder and Metal-Insulator Transitions in Weyl Semimetals.

    PubMed

    Chen, Chui-Zhen; Song, Juntao; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X C

    2015-12-11

    The Weyl semimetal (WSM) is a newly proposed quantum state of matter. It has Weyl nodes in bulk excitations and Fermi arc surface states. We study the effects of disorder and localization in WSMs and find three novel phase transitions. (i) Two Weyl nodes near the Brillouin zone boundary can be annihilated pairwise by disorder scattering, resulting in the opening of a topologically nontrivial gap and a transition from a WSM to a three-dimensional quantum anomalous Hall state. (ii) When the two Weyl nodes are well separated in momentum space, the emergent bulk extended states can give rise to a direct transition from a WSM to a 3D diffusive anomalous Hall metal. (iii) Two Weyl nodes can emerge near the zone center when an insulating gap closes with increasing disorder, enabling a direct transition from a normal band insulator to a WSM. We determine the phase diagram by numerically computing the localization length and the Hall conductivity, and propose that the novel phase transitions can be realized on a photonic lattice. PMID:26705648

  10. Metal-insulator transition in nanocomposite VOx films formed by anodic electrodeposition

    NASA Astrophysics Data System (ADS)

    Tsui, Lok-kun; Hildebrand, Helga; Lu, Jiwei; Schmuki, Patrik; Zangari, Giovanni

    2013-11-01

    The ability to grow VO2 films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VOx films by anodic electrodeposition of V2O5, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO2 stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ˜ -2.4%/ °C from 20 to 140 °C.

  11. Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

    SciTech Connect

    Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni; Hildebrand, Helga; Schmuki, Patrik

    2013-11-11

    The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

  12. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-01

    Epitaxial SrTi1-xVxO3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  13. Metal-insulator transition at lanthanum aluminate-strontium titanate interface induced by oxygen plasma treatment

    NASA Astrophysics Data System (ADS)

    Dai, Weitao; Cen, Cheng

    The formation of two-dimensional electron gas (2DEG) at lanthanum aluminate (LAO)-strontium titanate (STO) interface, as well as the 2DEG's unique characters in metal-insulator transition, have evoked widespread interest. Highly insulating interfaces are obtained for the structures with LAO thickness below 3 unit cell (uc) and abrupt transition from an insulating to conducting interface was observed for samples with thicker LAO layers. For 3uc LAO/STO samples, reversible nanoscale control of the metal-insulator transition was implemented by a conductive AFM writing. Our research furtherly discovered a very stable metal-insulator transition can be achieved by oxygen plasma (OP) treatment for samples with thicker LAO layers. AFM imaging and XPS measurement demonstrated the low energy OP treatment altered only the surface bonds, which confirmed the importance of surface properties in the heterostructures. Then microscale Hall bars were patterned at the interface and imaged by electrostatic force microscope. Their transport and magnetic properties were measured. This research will promote deeper understanding about the interfacial metal-insulator transition mechanism and open new device opportunities. This work is supported by the Department of Energy Grant No. DE-SC-0010399 and National Science Foundation Grant No. NSF-1454950.

  14. Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

    NASA Astrophysics Data System (ADS)

    Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

    2007-03-01

    We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

  15. Metal-insulator transition by holographic charge density waves.

    PubMed

    Ling, Yi; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu; Zhang, Hongbao

    2014-08-29

    We construct a gravity dual for charge density waves (CDWs) in which the translational symmetry along one spatial direction is spontaneously broken. Our linear perturbation calculation on the gravity side produces the frequency dependence of the optical conductivity, which exhibits the two familiar features of CDWs, namely, the pinned collective mode and gapped single-particle excitation. These two features indicate that our gravity dual also provides a new mechanism to implement the metal to insulator phase transition by CDWs, which is further confirmed by the fact that dc conductivity decreases with the decreased temperature below the critical temperature. PMID:25215974

  16. Experimental Observation of a Metal-insulator Transition in 2D at Zero Magnetic Field

    NASA Astrophysics Data System (ADS)

    Kravchenko, S. V.

    1996-03-01

    The scaling theory of Abrahams et al. ^1 has had considerable success in describing many features of metal-insulator transitions. Within this theory, which was developed for non-interacting electrons, no such transition is possible in two-dimensional electron systems (2DES) in the absence of a magnetic field. However, we show experimentally that an ultra-high-mobility 2DES on the surface of silicon does exhibit the signature of a true metal-insulator phase transition at zero magnetic field at a critical electron density n_c ~10^11 cm-2. The energy of electron-electron interactions, ignored in the scaling theory,^1 is the dominant parameter in this 2DES. The resistivity, ρ, is empirically found to scale near the critical point both with temperature T and electric field E so that it can be represented by the form ρ(T,n_s)=ρ(T/T_0(n_s)) as Earrow0 or ρ(E,n_s)=ρ(E/E_0(n_s)) as Tarrow0. At the transition, the resistivity is close to 3h/e^2. Both scaling parameters, T0 and E_0, show power law behavior at the critical point. This is characteristic of a true phase transition and strongly resembles, in particular, the superconductor-insulator transition in disordered thin films,^2 as well as the transition between quantum Hall liquid and insulator.^3 Many high-mobility samples from two different sources (Institute for Metrological Service, Russia, and Siemens AG, Germany) with different oxide thicknesses and gate materials have been studied and similar results were found. Work done in collaboration with J. E. Furneaux, Whitney Mason, V. M. Pudalov, and M. D'Iorio, supported by NSF. ^1 E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979). ^2 Y. Liu, K. A. McGreer, B. Nease, D. B. Haviland, G. Martinez, J. W. Halley, and A. M. Goldman, Phys. Rev. Lett. 67, 2068 (1991). ^3 T. Wang, K. P. Clark, G. F. Spencer, A. M. Mack, and W. P. Kirk, Phys. Rev. Lett. 72, 709 (1994).

  17. Antiferromagnetic, metal-insulator, and superconducting phase transitions in underdoped cuprates: Slave-fermion t-J model in the hopping expansion

    SciTech Connect

    Shimizu, Akihiro; Aoki, Koji; Ichinose, Ikuo; Sakakibara, Kazuhiko; Matsui, Tetsuo

    2011-02-01

    We study a system of doped antiferromagnet in three dimensions at finite temperatures using the t-J model, a canonical model of strongly correlated electrons. We employ the slave-fermion representation of electrons, in which an electron is described as a composite of a charged spinless holon and a chargeless spinon. We introduce two kinds of U(1) gauge fields on links as auxiliary fields, one describing resonating valence bonds of antiferromagnetic nearest-neighbor spin pairs and the other for nearest-neighbor hopping amplitudes of holons and spinons in the ferromagnetic channel. To perform a numerical study of the system, we integrate out the fermionic holon field by using the hopping expansion in powers of the hopping amplitude, which is legitimate for the region in and near the insulating phase. The resultant effective model is described in terms of bosonic spinons, two U(1) gauge fields, and a collective field for hole pairs. We study this model by means of Monte Carlo simulations, calculating the specific heat, spin correlation functions, and instanton densities. We obtain a phase diagram in the hole concentration-temperature plane, which is in good agreement with that observed recently for clean and homogeneous underdoped samples.

  18. Percolative metal-insulator transition in LaMnO3

    NASA Astrophysics Data System (ADS)

    Sherafati, M.; Baldini, M.; Malavasi, L.; Satpathy, S.

    2016-01-01

    We show that the pressure-induced metal-insulator transition (MIT) in LaMnO3 is fundamentally different from the Mott-Hubbard transition and is percolative in nature, with the measured resistivity obeying the percolation scaling laws. Using the Gutzwiller method to treat correlation effects in a model Hamiltonian that includes both Coulomb and Jahn-Teller interactions, we show, one, that the MIT is driven by a competition between electronic correlation and the electron-lattice interaction, an issue that has been long debated, and two, that with compressed volume, the system has a tendency towards phase separation into insulating and metallic regions, consisting, respectively, of Jahn-Teller distorted and undistorted octahedra. This tendency manifests itself in a mixed phase of intermixed insulating and metallic regions in the experiment. Conduction in the mixed phase occurs by percolation and the MIT occurs when the metallic volume fraction, steadily increasing with pressure, exceeds the percolation threshold vc≈0.29 . Measured high-pressure resistivity follows the percolation scaling laws quite well, and the temperature dependence follows the Efros-Shklovskii variable-range hopping behavior for granular materials.

  19. Electrocaloric effect of metal-insulator transition in VO{sub 2}

    SciTech Connect

    Matsunami, Daichi; Fujita, Asaya

    2015-01-26

    The electrocaloric effect was observed in association with an electric-field induced metal-insulator transition in VO{sub 2} using a calorimetric measurement under an applied voltage. For a VO{sub 2} plate with a 0.4 mm thickness located in the center of a capacitor-like structure, the metal-insulator transition was manipulated by applying a few volts. The occurrence of a transition in such a thick sample with relatively low voltage indicates that a surface charge accumulation mechanism is effective. The isothermal entropy change reached 94 J kg{sup −1} K{sup −1}, while the adiabatic temperature change was calculated as −3.8 K under a voltage change of 0–3 V. The large entropy change is attributed to correlation of the complex freedom among spin, charge, and lattice.

  20. Oxygen vacancy induced metal-insulator transition in LaNiO3

    NASA Astrophysics Data System (ADS)

    Misra, Debolina; Kundu, Tarun Kumar

    2016-01-01

    First principle calculations were carried out to examine the metal-insulator transition in LaNiO3 due to changes in oxygen content and consequent alteration of valence state of nickel. The optical properties of all the oxygen deficient LaNiO3-x compounds were calculated to illustrate the electronic structures of the compounds and the change they undergo during the metal-insulator transition. The metallic nature of LaNiO3 is characterized by the Drude peak in the optical conductivity spectra and the high reflectivity it exhibits in the low frequency region. The complex dielectric function and the optical conductivity spectra clearly show that, for x = 0.25, i.e., LaNiO2.75 becomes a semiconductor. As x increases further to 0.5, a gap in the optical spectra appears, indicating the insulating nature of LaNiO2.5. The insulating state of LaNiO2.5 is best described by the GW+HSE method which gives a good estimation of the optical gap of the material. The absorption spectra of LaNiO2.5 clearly reveal that this material is transparent in the low frequency region. This metal-insulator transition is followed by another insulator to semiconductor transition, as x is increased further to 1 i.e., in case of LaNiO2. The metal-insulator transition is then explained on the basis of electron localization function calculations, which show the increase in the covalent bonding in the system as the transition to the insulating state sets in.

  1. Relative Influence of Intrinsic and Extrinsic Factors on the Metal-Insulator Transition of VO2 Nanowires

    NASA Astrophysics Data System (ADS)

    Kim, In Soo

    The influence of stoichiometry on the metal-insulator transition of vanadium dioxide (VO2) nanowires was investigated using Raman spectroscopy. Controlled reduction of nominally strain-free suspended VO2 nanowires was conducted by rapid thermal annealing (RTA). The deficiency in oxygen assisted in the unprecedented suppression of the metallic (R) phase to temperatures as low as 103 K through generation of free electrons. In a complementary manner, oxygen-rich conditions stabilized the metastable monoclinic (M2) and triclinic (T) phases. A pseudo-phase diagram with dimensions of temperature and stoichiometry was established, highlighting the accessibility of new phases in the nanowire geometry. Detection of the dynamic elastic response across the metal-insulator transition in suspended VO2 nanowires was enabled by fiber-coupled polarization dependent interferometry. Dual-beam Raman spectroscopy was developed to determine the local domain/phase structure of VO2 nanowires, which allowed for accurate modeling using COMSOL finite element analysis (FEA). The Young's moduli of the single crystal insulating (M1) and metallic (R) phases without artifacts were determined for the first time. The sources of dissipation were identified as clamping losses, structural losses, thermoelastic damping, and domain wall motion. While contribution of thermoelastic damping was found to be dominant in the terminal phases, extraordinary dissipation was observed upon formation and movement of domain walls. Finally, it was shown that creation of local defects could lead to new classes of tunable sensors with a discrete and programmable frequency response with temperature.

  2. Metal-Insulator Transition in nanoparticle solids: a kinetic Monte Carlo study

    NASA Astrophysics Data System (ADS)

    Zimanyi, Gergely; Qu, Luman; Voros, Marton

    Nanoparticle (NP) solids recently emerged as a promising platform for high performance electronic/optoelectronic devices, including third generation solar cells, light emitting diodes and field effect transistors. A challenge of NP films is that their charge transport is in the unfavorable hopping/insulating regime. Recent experiments showed that it is possible to tune the NP solids through a Metal-Insulator Transition (MIT) via ligand engineering and ALD matrix infilling. However, the microscopic understanding of this transition is not yet clear. To address this challenge, we developed a Kinetic Monte Carlo transport modeling framework that builds on determining NP parameters from ab initio-based calculations of the energy level structures, charging energies and overlaps, and then uses these to compute the hopping mobility across a disordered NP array by the Marcus and Miller-Abrahams mechanisms. We reproduced and explained the observed non-monotonous dependence of the mobility on the NP diameter. Centrally, we extended our platform to be able to capture the MIT. We determined the MIT phase boundary on the (NP-NP overlap - Electron density) plane. We demonstrated that all mobilities fall on a universal scaling curve, allowing us to determine the critical behavior across the MIT. Supported by: UC Davis Office of Research RISE ANSWER Grant.

  3. Infrared evidence of a Slater metal-insulator transition in NaOsO₃.

    PubMed

    Vecchio, I Lo; Perucchi, A; Di Pietro, P; Limaj, O; Schade, U; Sun, Y; Arai, M; Yamaura, K; Lupi, S

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO₃ 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO₃ is the first known 3D Slater insulator. PMID:24141899

  4. Infrared evidence of a Slater metal-insulator transition in NaOsO3

    PubMed Central

    Vecchio, I. Lo; Perucchi, A.; Di Pietro, P.; Limaj, O.; Schade, U.; Sun, Y.; Arai, M.; Yamaura, K.; Lupi, S.

    2013-01-01

    The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator. PMID:24141899

  5. Unraveling metal-insulator transition mechanism of VO₂ triggered by tungsten doping.

    PubMed

    Tan, Xiaogang; Yao, Tao; Long, Ran; Sun, Zhihu; Feng, Yajuan; Cheng, Hao; Yuan, Xun; Zhang, Wenqing; Liu, Qinghua; Wu, Changzheng; Xie, Yi; Wei, Shiqiang

    2012-01-01

    Understanding the mechanism of W-doping induced reduction of critical temperature (T(C)) for VO(2) metal-insulator transition (MIT) is crucial for both fundamental study and technological application. Here, using synchrotron radiation X-ray absorption spectroscopy combined with first-principles calculations, we unveil the atomic structure evolutions of W dopant and its role in tailoring the T(C) of VO(2) MIT. We find that the local structure around W atom is intrinsically symmetric with a tetragonal-like structure, exhibiting a concentration-dependent evolution involving the initial distortion, further repulsion, and final stabilization due to the strong interaction between doped W atoms and VO(2) lattices across the MIT. These results directly give the experimental evidence that the symmetric W core drives the detwisting of the nearby asymmetric monoclinic VO(2) lattice to form rutile-like VO(2) nuclei, and the propagations of these W-encampassed nuclei through the matrix lower the thermal energy barrier for phase transition. PMID:22737402

  6. Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Kizuka, Hinako; Yagi, Takashi; Jia, Junjun; Yamashita, Yuichiro; Nakamura, Shinichi; Taketoshi, Naoyuki; Shigesato, Yuzo

    2015-05-01

    Thermal conductivity of a 300-nm-thick VO2 thin film and its temperature dependence across the metal-insulator phase transition (TMIT) were studied using a pulsed light heating thermoreflectance technique. The VO2 and Mo/VO2/Mo films with a VO2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO2 films were deposited by reactive rf magnetron sputtering using a V2O3 target and an Ar-O2 mixture gas at 645 K. The VO2 films consisted of single phase VO2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO2 film decreased abruptly from 6.3 × 10-1 to 5.3 × 10-4 Ω cm across the TMIT of around 325-340 K. The thermal conductivity of the VO2 film increased from 3.6 to 5.4 W m-1 K-1 across the TMIT. This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.

  7. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide.

    PubMed

    Booth, Jamie M; Drumm, Daniel W; Casey, Phil S; Smith, Jackson S; Seeber, Aaron J; Bhargava, Suresh K; Russo, Salvy P

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  8. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    PubMed Central

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-01-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. PMID:27211303

  9. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

    NASA Astrophysics Data System (ADS)

    Booth, Jamie M.; Drumm, Daniel W.; Casey, Phil S.; Smith, Jackson S.; Seeber, Aaron J.; Bhargava, Suresh K.; Russo, Salvy P.

    2016-05-01

    Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

  10. Control of plasmonic nanoantennas by reversible metal-insulator transition.

    PubMed

    Abate, Yohannes; Marvel, Robert E; Ziegler, Jed I; Gamage, Sampath; Javani, Mohammad H; Stockman, Mark I; Haglund, Richard F

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  11. Control of plasmonic nanoantennas by reversible metal-insulator transition

    PubMed Central

    Abate, Yohannes; Marvel, Robert E.; Ziegler, Jed I.; Gamage, Sampath; Javani, Mohammad H.; Stockman, Mark I.; Haglund, Richard F.

    2015-01-01

    We demonstrate dynamic reversible switching of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed for the first time in the near-field. Using polarization-selective near-field imaging techniques, we simultaneously monitor the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipole nanoantennas to monopole nanoantennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique features open up promising novel applications in active nanophotonics. PMID:26358623

  12. Metal-insulator transition induced in CaVO{sub 3} thin films

    SciTech Connect

    Gu Man; Laverock, Jude; Chen, Bo; Smith, Kevin E.; Wolf, Stuart A.; Lu Jiwei

    2013-04-07

    Stoichiometric CaVO{sub 3} (CVO) thin films of various thicknesses were grown on single crystal SrTiO{sub 3} (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 {mu}A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film ({approx}60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V{sup 4+}.

  13. Pressure-induced metal-insulator transition in spinel compound CuV 2S 4

    NASA Astrophysics Data System (ADS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-04-01

    In order to investigate the pressure effect on electrical properties of CuV 2S 4, we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2S 4 at 8 GPa.

  14. Quantum-critical conductivity scaling for a metal-insulator transition

    PubMed

    Lee; Carini; Baxter; Henderson; Gruner

    2000-01-28

    Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteristic length, the form of which is derived by experiment. PMID:10649993

  15. Pressure-driven metal-insulator transition in BiFeO3 from dynamical mean-field theory

    NASA Astrophysics Data System (ADS)

    Shorikov, A. O.; Lukoyanov, A. V.; Anisimov, V. I.; Savrasov, S. Y.

    2015-07-01

    A metal-insulator transition (MIT) in BiFeO3 under pressure was investigated by a method combining generalized gradient corrected local density approximation with dynamical mean-field theory (GGA+DMFT). Our paramagnetic calculations are found to be in agreement with the experimental phase diagram: Magnetic and spectral properties of BiFeO3 at ambient and high pressures were calculated for three experimental crystal structures R 3 c , P b n m , and P m 3 ¯m . At ambient pressure in the R 3 c phase, an insulating gap of 1.2 eV was obtained in good agreement with its experimental value. Both R 3 c and P b n m phases have a metal-insulator transition that occurs simultaneously with a high-spin (HS) to low-spin (LS) transition. The critical pressure for the P b n m phase is 25-33 GPa, which agrees well with the experimental observations. The high-pressure and -temperature P m 3 ¯m phase exhibits a metallic behavior observed experimentally as well as in our calculations in the whole range of considered pressures and undergoes the LS state at 33 GPa, where a P b n m to P m 3 ¯m transition is experimentally observed. The antiferromagnetic GGA+DMFT calculations carried out for the P b n m structure result in simultaneous MIT and HS-LS transitions at a critical pressure of 43 GPa in agreement with the experimental data.

  16. The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

    SciTech Connect

    Bubel, Simon; Glaudell, Anne M.; Mates, Thomas E.; Chabinyc, Michael L.; Hauser, Adam J.; Stemmer, Susanne

    2015-03-23

    For physical studies of correlated electron systems and for realizing novel device concepts, electrostatic modulation of metal-insulator transitions (MITs) is desired. The inherently high charge densities needed to modulate MITs make this difficult to achieve. The high capacitance of ionic liquids are attractive but, voltages are needed that can be in excess of the electrochemical stability of the system. Here, we show temperature/resistivity data that suggest electrostatic modulation of the MIT temperature of NdNiO{sub 3} in a wide regime. However, additional voltammetric and x-ray photoelectron spectroscopy measurements demonstrate the electrochemical impact of the electrostatic doping approach with ionic liquids.

  17. Critical Slowing Down of the Charge Carrier Dynamics at the Mott Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Zielke, David; Polzin, Jana; Sasaki, Takahiko; Müller, Jens

    2015-05-01

    We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical end point, we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.

  18. Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films

    SciTech Connect

    Yoshimatsu, K; Okabe, K; Kumigashira, H; Okamoto, Satoshi; Aizaki, S; Fujimori, A; Oshima, M

    2010-01-01

    We have investigated the changes occurring in the electronic structure of digitally controlled SrVO3 ultrathin films across the dimensionality-controlled metal-insulator transition (MIT) by in situ photoemission spectroscopy. With decreasing film thickness, a pseudogap is formed at EF through spectral weight transfer from the coherent part to the incoherent part. The pseudogap finally evolves into an energy gap that is indicative of the MIT in a SrVO3 ultrathin film. The observed spectral behavior is reproduced by layer dynamical-mean-field-theory calculations, and it indicates that the observed MIT is caused by the reduction in the bandwidth due to the dimensional crossover.

  19. Controlling the metal insulator transition using the ferroelectric field effect in rare earth nickelates

    NASA Astrophysics Data System (ADS)

    Marshall, Matthew; Disa, Ankit; Kumah, Divine; Chen, Hanghui; Ismail-Beigi, Sohrab; Walker, Fred; Ahn, Charles

    2013-03-01

    A ferroelectric field effect transistor (FE-FET) modulates conductivity in a non-volatile manner by electrostatically accumulating and depleting charge carriers at the interface between a conducting channel and ferroelectric gate. The rare earth nickelate LaNiO3 is metallic in bulk, while other rare earth nickelates, such as NdNiO3, exhibit metal-insulator transitions and anti-ferromagnetic behavior in the bulk. Here, we show that by coupling the ferroelectric polarization of Pb0.8Zr0.2TiO3 (PZT) to the carriers in a nickelate, we can dynamically induce a metal- insulator transition in ultra-thin films of LaNiO3, and induce large changes in the MIT transition temperature in NdNiO3. Density functional theory is used to determine changes in the physical and electronic Ni-O-Ni bond angle of the nickelate at the interface between PZT and LaNiO3. The effect of the ferroelectric polarization is to decrease the Ni-O-Ni bond angle from 180 degrees and increase the carrier effective mass. Related to this change in electronic structure, we observe a change in resistivity of approximately 80% at room temperature for an ultra-thin 3 unit cell thick film of LaNiO3. Work supported by FENA and the NSF under MRSEC DMR 1119826.

  20. Redox chemistry and metal-insulator transitions intertwined in a nano-porous material

    NASA Astrophysics Data System (ADS)

    Maximoff, Sergey N.; Smit, Berend

    2014-06-01

    Metal-organic frameworks are nano-porous adsorbents of relevance to gas separation and catalysis, and separation of oxygen from air is essential to diverse industrial applications. The ferrous salt of 2,5-dihydroxy-terephthalic acid, a metal-organic framework of the MOF74 family, can selectively adsorb oxygen in a manner that defies the classical picture: adsorption sites either do or do not share electrons over a long range. Here we propose, and then justify phenomenologically and computationally, a mechanism. Charge-transfer-mediated adsorption of electron acceptor oxygen molecules in the metal-organic framework, which is a quasi-one-dimensional electron-donor semiconductor, drives and is driven by quasi-one-dimensional metal-insulator-metal transitions that localize or delocalize the quasi-one-dimensional electrons. This mechanism agrees with the empirical evidence, and predicts a class of nano-porous semiconductors or metals and potential adsorbents and catalysts in which chemistry and metal-insulator-metal transitions intertwine.

  1. Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

    PubMed

    Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

    2016-06-29

    As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future. PMID:27168422

  2. Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

    NASA Astrophysics Data System (ADS)

    Liao, G. M.; Chen, S.; Fan, L. L.; Chen, Y. L.; Wang, X. Q.; Ren, H.; Zhang, Z. M.; Zou, C. W.

    2016-04-01

    Insulator to metal phase transitions driven by external electric field are one of the hottest topics in correlated oxide study. While this electric triggered phenomena always mixes the electric field switching effect and joule thermal effect together, which are difficult to clarify the intrinsic mechanism. In this paper, we investigate the dynamical process of voltage-triggered metal-insulator transition (MIT) in a VO2 crystal film and observe the temperature dependence of the threshold voltages and switching delay times, which can be explained quite well based on a straightforward joule thermal model. By conducting the voltage controlled infrared transmittance measurement, the delayed infrared transmission change is also observed, further confirming the homogeneous switching process for a large-size film. All of these results show strong evidences that joule thermal effect plays a dominated role in electric-field-induced switching of VO2 crystal.

  3. The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  4. The finite size effect on the metal-insulator transition of MOCVD grown VO sub 2 films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  5. Electronic Excitations and Metal-Insulator Transition inPoly(3-hexylthiophene) Organic Field-Effect Transistors

    SciTech Connect

    Sai, N.; Li, Z.Q.; Martin, M.C.; Basov, D.N.; Di Ventra, M.

    2006-11-07

    We carry out a comprehensive theoretical and experimentalstudy of charge injection in poly(3-hexylthiophene) (P3HT) to determinethe most likely scenario for metal-insulator transition in this system.Wecalculate the optical-absorption frequencies corresponding to a polaronand a bipolaron lattice in P3HT. We also analyze the electronicexcitations for three possible scenarios under which a first- or asecond-order metal-insulator transition can occur in doped P3HT. Thesetheoretical scenarios are compared with data from infrared absorptionspectroscopy on P3HT thin-film field-effect transistors (FETs). Ourmeasurements and theoretical predictions suggest that charge-inducedlocalized states in P3HT FETs are bipolarons and that the highest dopinglevel achieved in our experiments approaches that required for afirst-order metal-insulator transition.

  6. Metal-insulator-transition in SrTiO3 induced by argon bombardment combined with field effect

    SciTech Connect

    Xu, Jie; Zhu, Zhengyong; Zhao, Hengliang; Luo, Zhijiong

    2014-12-15

    By fabricating the Field-Effect-Transistors on argon bombardment SrTiO3 substrates, not only we have achieved one of the best mobility for Field-Effect-Transistors fabricated on SrTiO3, but also realized strong field induced Metal-Insulator-Transition. The critical sheet resistance for the Metal-Insulator-Transition is only 1/7 of the value obtained in the former experiments, indicating a different mechanism. Further study shows that the Metal-Insulator-Transition can be attributed to the oxygen vacancies formed after the bombardment becoming the electron donor under the electric field modulation, increasing SrTiO3 surface electron density and transforming the substrate into metallic state.

  7. The Effect of Enhanced Spin-Orbit Scattering on the Superconducting - Nonsuperconducting Transition and the Metal-Insulator Transition in Granular Aluminum.

    NASA Astrophysics Data System (ADS)

    Miller, Theodore A.

    A small amount of bismuth was added to a set of granular aluminum samples to increase the spin-orbit scattering rate. This set is compared with a second set with no bismuth added. With the addition of bismuth, both the metal-insulator transition and the threshold for the presence of superconductivity were shifted a similar amount to higher values of resistivity. The shift of the metal-insulator transition can be explained as a result of the effect of increased spin -orbit scattering at an Anderson transiton. The fact that the superconducting threshold also shifts indicates that it is the proximity to the metal-insulator transition that depresses superconductivity.

  8. Low-energy description of the metal-insulator transition in the rare-earth nickelates

    NASA Astrophysics Data System (ADS)

    Subedi, Alaska; Peil, Oleg E.; Georges, Antoine

    2015-02-01

    We propose a simple theoretical description of the metal-insulator transition of rare-earth nickelates. The theory involves only two orbitals per nickel site, corresponding to the low-energy antibonding eg states. In the monoclinic insulating state, bond-length disproportionation splits the manifold of eg bands, corresponding to a modulation of the effective on-site energy. We show that, when subject to a local Coulomb repulsion U and Hund's coupling J , the resulting bond-disproportionated state is a paramagnetic insulator for a wide range of interaction parameters. Furthermore, we find that when U -3 J is small or negative, a spontaneous instability to bond disproportionation takes place for large enough J . This minimal theory emphasizes that a small or negative charge-transfer energy, a large Hund's coupling, and a strong coupling to bond disproportionation are the key factors underlying the transition. Experimental consequences of this theoretical picture are discussed.

  9. Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO{sub 3}

    SciTech Connect

    Scagnoli, V.; Staub, U.; Mulders, A. M.; Janousch, M.; Meijer, G. I.; Hammerl, G.; Tonnerre, J. M.; Stojic, N.

    2006-03-01

    Soft x-ray resonant scattering at the Ni L{sub 2,3} edges is used to test models of magnetic- and orbital-ordering below the metal-insulator transition in NdNiO{sub 3}. The large branching ratio of the L{sub 3} to L{sub 2} intensities of the (1/2 0 1/2) reflection and the observed azimuthal angle and polarization dependence originates from a noncollinear magnetic structure. The absence of an orbital signal and the noncollinear magnetic structure show that the nickelates are materials for which orbital ordering is absent at the metal-insulator transition.

  10. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy.

    PubMed

    Zhang, Chenxi; Kc, Santosh; Nie, Yifan; Liang, Chaoping; Vandenberghe, William G; Longo, Roberto C; Zheng, Yongping; Kong, Fantai; Hong, Suklyun; Wallace, Robert M; Cho, Kyeongjae

    2016-08-23

    Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics. PMID:27415610

  11. Field-Induced Metal-Insulator Transition in a Two-Dimensional Organic Superconductor

    SciTech Connect

    Wosnitza, J.; Wanka, S.; Hagel, J.; Lo''hneysen, H. v.; Qualls, J. S.; Brooks, J. S.; Balthes, E.; Schlueter, J. A.; Geiser, U.; Mohtasham, J.

    2001-01-15

    The quasi-two-dimensional organic superconductor {beta}''-( BEDT-TTF){sub 2}SF{sub 5} CH{sub 2}CF {sub 2}SO{sub 3} (T{sub c}{approx}4.4 K) shows very strong Shubnikov--de Haas (SdH) oscillations which are superimposed on a highly anomalous steady background magnetoresistance, R{sub b} . Comparison with de Haas--van Alphen oscillations allows a reliable estimate of R{sub b} which is crucial for the correct extraction of the SdH signal. At low temperatures and high magnetic fields insulating behavior evolves. The magnetoresistance data violate Kohler's rule, i.e., cannot be described within the framework of semiclassical transport theory, but converge onto a universal curve appropriate for dynamical scaling at a metal-insulator transition.

  12. Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2014-06-01

    Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l (n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a

  13. Effect of crystal-field splitting and interband hybridization on the metal-insulator transitions of strongly correlated systems

    NASA Astrophysics Data System (ADS)

    Poteryaev, Alexander I.; Ferrero, Michel; Georges, Antoine; Parcollet, Olivier

    2008-07-01

    We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an interorbital hopping (interband hybridization). Both terms are relevant to the realistic description of correlated materials such as transition-metal oxides. The nature of the Mott metal-insulator transition is clarified and is found to depend on the magnitude of the crystal-field splitting. At large values of the splitting, a transition from a two-band to a one-band metal is first found as the on-site repulsion is increased and is followed by a Mott transition for the remaining band, which follows the single-band (Brinkman-Rice) scenario well documented previously within dynamical mean-field theory. At small values of the crystal-field splitting, a direct transition from a two-band metal to a Mott insulator with partial orbital polarization is found, which takes place simultaneously for both orbitals. This transition is characterized by a vanishing of the quasiparticle weight for the majority orbital but has a first-order character for the minority orbital. It is pointed out that finite-temperature effects may easily turn the metallic regime into a bad metal close to the orbital polarization transition in the metallic phase.

  14. Density functional plus dynamical mean-field theory of the metal-insulator transition in early transition-metal oxides

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Ai, Xinyuan; Millis, Andrew J.; Marianetti, Chris A.

    2014-09-01

    The combination of density functional theory and single-site dynamical mean-field theory, using both Hartree and full continuous-time quantum Monte Carlo impurity solvers, is used to study the metal-insulator phase diagram of perovskite transition-metal oxides of the form ABO3 with a rare-earth ion A =Sr, La, Y and transition metal B =Ti, V, Cr. The correlated subspace is constructed from atomiclike d orbitals defined using maximally localized Wannier functions derived from the full p-d manifold; for comparison, results obtained using a projector method are also given. Paramagnetic DFT + DMFT computations using full charge self-consistency along with the standard "fully localized limit" (FLL) double counting are shown to incorrectly predict that LaTiO3, YTiO3, LaVO3, and SrMnO3 are metals. A more general examination of the dependence of physical properties on the mean p-d energy splitting, the occupancy of the correlated d states, the double-counting correction, and the lattice structure demonstrates the importance of charge-transfer physics even in the early transition-metal oxides and elucidates the factors underlying the failure of the standard approximations. If the double counting is chosen to produce a p-d splitting consistent with experimental spectra, single-site dynamical mean-field theory provides a reasonable account of the materials properties. The relation of the results to those obtained from "d-only" models in which the correlation problem is based on the frontier orbital p-d antibonding bands is determined. It is found that if an effective interaction U is properly chosen the d-only model provides a good account of the physics of the d1 and d2 materials.

  15. Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

    NASA Astrophysics Data System (ADS)

    Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

    Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

  16. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    PubMed Central

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-01-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system. PMID:26860789

  17. Functionalized graphene as a model system for the two-dimensional metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Hernández, S. C.; Nath, A.; Wheeler, V. D.; Walton, S. G.; Krowne, C. M.; Gaskill, D. K.

    2016-02-01

    Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems must be insulating. The existence of a metallic state for such a wide range of 2D systems thus reveals a wide gap in our understanding of 2D transport that has become more important as research in 2D systems expands. A key to understanding the 2D metallic state is the metal-insulator transition (MIT). In this report, we explore the nature of a disorder induced MIT in functionalized graphene, a model 2D system. Magneto-transport measurements show that weak-localization overwhelmingly drives the transition, in contradiction to theoretical assumptions that enhanced electron-electron interactions dominate. These results provide the first detailed picture of the nature of the transition from the metallic to insulating states of a 2D system.

  18. Systematics in the metal-insulator transition temperatures in vanadium oxides

    NASA Astrophysics Data System (ADS)

    Fisher, B.; Genossar, J.; Reisner, G. M.

    2016-01-01

    Nine of the known vanadium oxides, VO 2 - 1 / n (n - a positive or negative integer) with n = 2 - 6 , 8 , 9 , ∞ and -6, undergo metal-insulator transitions accompanied by structural transitions, at various temperatures TMIT (V7O13 is metallic above T=0). Among the persistent efforts to determine the driving force(s) of these transitions, electron-electron (Mott-like) and electron-phonon (Peierls-like) interactions, there were several attempts to find systematics in TMIT as function of n. Here we present an unexpectedly simple and illuminating systematics that holds for positive n: if TMIT is the absolute value of the difference between TM(n) and TP(n), which represent the contributions of electron-electron and electron-phonon interactions, respectively, all data points of TM-TP versus 1/n lie on, or close to, two simple straight lines; one is TM -TP =T∞(7 / n - 1) for V3O5, V4O7, V5O9, V7O13, V8O15, V9O17 and VO2 and the other is TM -TP =T∞(3 / n - 1) for V2O3, V6O11 and VO2.

  19. Metal-insulator transition in low dimensional La{sub 0.75}Sr{sub 0.25}VO{sub 3} thin films

    SciTech Connect

    Dao, Tran M.; Mondal, Partha S.; Takamura, Y.; Arenholz, E.; Lee, Jaichan

    2011-06-15

    We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La{sub 0.75}Sr{sub 0.25}VO{sub 3} films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electronelectron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

  20. ARPES studies on metal-insulator-transition in NiS2-xSex

    NASA Astrophysics Data System (ADS)

    Han, Garam; Kim, Y. K.; Kyung, W. S.; Kim, Chul; Koh, Y. Y.; Lee, K. D.; Kim, C.

    2012-02-01

    Understanding Metal insulator transition (MIT) is one of the most challenging issues in condensed matter physics. NiS2-xSex (NSS) is a well known system for band width controlled MIT studies while most of High-Tc superconductors (HTSCs) are described within band filling MIT picture. Cubic pyrite NiS2 is known as a charge-transfer (CT) insulator and easily forms a solid solution with NiSe2, which is a good metal even though it is isostrucural and isoelectronic to NiS2. MIT is induced by Se alloying and is observed at a low temperature for x=0.5. The important merit is that there is no structure transition which often accompanies MIT. In spite of the importance of the system, even the experimental band dispersion is not known so far along with many controversies. For this reason, we performed angle resolved photoemission spectroscopy on high quality single crystals and successfully obtained Fermi surface maps of x=0.5, x=0.7 and x=0.8 systems (the metallic side). By doping dependent systematic studies on NSS and comparison with LDA calculation, we try to explain the relationship between band width and the MIT.

  1. Nanoscale Electrical Imaging of Metal-Insulator Transition in Ion-Gel Gated ZnO Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Ren, Yuan; Yuan, Hongtao; Wu, Xiaoyu; Iwasa, Yoshihiro; Cui, Yi; Hwang, Harold; Lai, Keji

    2015-03-01

    Electric double-layer transistors (EDLTs) using ionic liquid as the gate dielectric have demonstrated a remarkably wide range of density modulation, a condition crucial for the study of novel electronic phases in complex quantum materials. Yet little is known microscopically when carriers are modulated in the EDLT structure because of the technical challenge to image the buried electrolyte-semiconductor interface with nanoscale resolution. Using a cryogenic microwave impedance microscope, we demonstrate the real-space conductivity mapping in ZnO EDLTs with a spatial resolution of 100nm. A thin layer of ion gel, which solidifies below the glass transition temperature of 200K, was spin-coated on the ZnO surface to induce the metal-insulator transition. The microwave images acquired at different channel conductance clearly showed the spatial evolution of local conductivity through the transition. In addition, by applying a large source-drain bias, electrical inhomogeneity was also observed across the source and drain electrodes.

  2. Linear-in-temperature resistivity close to a topological metal insulator transition in ultra-multi valley fcc-ytterbium

    NASA Astrophysics Data System (ADS)

    Enderlein, Carsten; Fontes, Magda; Baggio-Saitovich, Elisa; Continentino, Mucio A.

    2016-01-01

    The semimetal-to-semiconductor transition in fcc-Yb under modest pressure can be considered a picture book example of a metal-insulator transition of the Lifshitz type. We have performed transport measurements at low temperatures in the closest vicinity of the transition and related DFT calculations of the Fermi surface. Our resistivity measurements show a linear temperature dependence with an unusually low dρ / dT at low temperatures approaching the MIT. The calculations suggest fcc-ytterbium being an ultra-multi valley system with 24 electron and 6 hole pockets in the Brillouin zone. Such Fermi surface topology naturally supports the appearance of strongly correlated phases. An estimation of the quasiparticle-enhanced effective mass shows that the scattering rate is by at least two orders of magnitude lower than in other materials which exhibit linear-in-T behavior at a quantum critical point. However, we cannot exclude an excessive effective mass enhancement, when the van Hove singularity touches the Fermi level.

  3. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Bohnenbuck, B.; Chuang, Y.-D.; Geck, J.; Tokura, Y.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Sawatzky, G. A.; Damascelli, A.

    2010-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr3(Ru1-xMnx)2O7, performed at both Ru and Mn L-edges. Resonant magnetic superstructure reflections, which indicate an incipient instability of the parent compound, are detected below the transition. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x˜0.05 Mn substitution. In collaboration with A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley Lab), I. Zegkinoglou, M.W. Haverkort (MPI, Stuttgart), I.S. Elfimov, D.G. Hawthorn (UBC), R. Mathieu, S. Satow, H. Takagi (Tokyo), H.-H. Wu and C. Sch"ußler-Langeheine (Cologne).

  4. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Hippalgaonkar, Kedar; Lee, Sangwook; Ko, Changhyun; Yang, Fan; Suh, Joonki; Liu, Kai; Wang, Kevin; Zhang, Xiang; Dames, Chris; Wu, Junqiao

    In an electrically conductive solid, the Wiedemann-Franz (WF) law requires the electronic contribution to thermal conductivity to be proportional to the product of electrical conductivity and absolute temperature , where the ratio is the Lorenz number, typically not much different from the Sommerfeld value L0 = 2.44x10-8 W-ohm-K-2 at room temperature. The WF law reflects a basic property of metals where charge and heat are both carried by the same quasiparticles that both experience elastic scattering. At temperatures below the Debye temperature, the WF law has been experimentally shown to be robust in conventional conductors, with violations theoretically predicted or experimentally observed in strongly correlated electron systems or Luttinger liquids. However, the experimentally observed violations are at very low temperatures. Here we report breakdown of the WF law in a strongly correlated metal, in which the electronic thermal conductivity and L nearly vanish at temperatures above room temperature, where the electronic thermal conductivity amounts to only <~5% of the value expected from the WF law. Unusual behaviour of thermal conductivity in vanadium dioxide across the metal-insulator transition.

  5. Metal-insulator transition in SrTi1-xVxO3 thin films

    NASA Astrophysics Data System (ADS)

    Gu, Man; Wolf, Stuart; Lu, Jiwei

    2014-03-01

    Epitaxial SrTi1-xVxO3 (0 <= x <= 1) thin films with thicknesses of ~ 16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for the film with x = 0.67. The films with higher vanadium concentration (x >0.67) were metallic, and the electrical resistivity followed the T2 law corresponding to a Fermi liquid system. In the insulating region of x <0.67, the temperature dependence of electrical resistivity for the x = 0.5 and 0.33 films can be scaled with Mott's variable range hopping model. The possible mechanism behind the observed MIT might be associated the interplay between electron-electron interactions and disorder-induced localization. The Ti4+ ion substitution introduces Anderson-localized states as well as lattice distortions that result in a reduction in the effective 3d bandwidth W. We gratefully acknowledge the financial support from the Army Research Office through MURI grant No. W911-NF-09-1-0398.

  6. Universal and Non-universal Behavior at the Metal Insulator Transition.

    NASA Astrophysics Data System (ADS)

    Helgren, Erik; Zeng, Li; Querlioz, Damien; Hellman, Frances

    2006-03-01

    A metal-insulator transition in amorphous metal semiconductor alloys is known to exist at dopant concentrations much higher (˜ 12 at. %) than their crystalline counterparts[1]. We have studied the MIT in alloys grown using MBE for a series of semiconductor matrices, Si, Ge and both C and H-C (hydrogenated carbon) for various dopants (magnetic Gd and non-magnetic Y and Nb), as a function of concentration and magnetic field tuning. We compare the temperature dependence of the DC conductivity in the magnetically doped systems to the non-magnetic systems and to crystalline doped semiconductors (i.e. Si:P). Results are discussed in terms of a theoretical model that incorporates both disorder and electronic correlations[2]. This model correctly describes many universally observed aspects including the remarkably similar temperature dependence of the metallic and insulating DC conductivity of crystalline and amorphous systems, despite the vastly different disorder and electron concentration. There are however very significant variations in the prefactors that control the magnitude of the conductivity, which we correlate with the microscopic physics of each system. [1] F. Hellman et al. PRL 77, 4652 [2] Lee and Ramakrishnan RMP 57, 287

  7. Novel Electronic Behavior Driving NdNiO3 Metal-Insulator Transition.

    PubMed

    Upton, M H; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D; Chakhalian, J; Middey, S; Kim, Jong-Woo; Ryan, Philip J

    2015-07-17

    We present evidence that the metal-insulator transition (MIT) in a tensile-strained NdNiO3 (NNO) film is facilitated by a redistribution of electronic density and that it neither requires Ni charge disproportionation nor a symmetry change [U. Staub et al., Phys. Rev. Lett. 88, 126402 (2002); R. Jaramillo et al., Nat. Phys. 10, 304 (2014)]. Given that epitaxial tensile strain in thin NNO films induces preferential occupancy of the e(g) d(x(2)-y(2)) orbital we propose that the larger transfer integral of this orbital state with the O 2p orbital state mediates a redistribution of electronic density from the Ni atom. A decrease in the Ni d(x(2)-y(2)) orbital occupation is directly observed by resonant inelastic x-ray scattering below the MIT temperature. Furthermore, an increase in the Nd charge occupancy is measured by x-ray absorption at the Nd L(3) edge. Both spin-orbit coupling and crystal field effects combine to break the degeneracy of the Nd 5d states, shifting the energy of the Nd e(g) d(x(2)-y(2)) orbit towards the Fermi level, allowing the A site to become an active acceptor during the MIT. This work identifies the relocation of electrons from the Ni 3d to the Nd 5d orbitals across the MIT. We propose that the insulating gap opens between the Ni 3d and O 2p states, resulting from Ni 3d electron localization. The transition seems to be neither a purely Mott-Hubbard transition nor a simple charge transfer. PMID:26230808

  8. Variation of optical conductivity spectra in the course of bandwidth-controlled metal-insulator transitions in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Ueda, K.; Fujioka, J.; Tokura, Y.

    2016-06-01

    We spectroscopically investigate a series of pyrochlore iridates R2Ir2O7 (R : rare-earth and Y ions) where the metal-insulator transitions are induced by systematic bandwidth control via chemical substitutions of R ions. We establish the phase diagram of R2Ir2O7 , as endorsed by the variation of the optical conductivity spectra, in which the competing phases including paramagnetic insulator (PI), paramagnetic metal (PM), and antiferromagnetic insulator (AFI) show up as a function of bandwidth and temperature. For small R -ionic radius (R = Y-Sm), i.e., strongly correlated region, pronounced peaks on the edge of the optical gap are discerned below the magnetic transition temperature TN, which is attributable to exciton and magnon sideband absorptions. It turns out that the estimated nearest-neighbor exchange interaction increases as R -ionic radius increases, whereas TN monotonically decreases, indicating that the all-in all-out magnetic order arises from the interplay among several exchange interactions inherent to extended 5 d orbitals on the frustrated lattice. For larger R -ionic radius (R = Sm-Pr), i.e., relatively weakly correlated region, the optical conductivity spectra markedly change below 0.3 eV in the course of PM-AFI transition, implying that the magnetic order induces the insulating state. In particular, we have found distinct electrodynamics in the composition of R =Nd0.5Pr0.5 which is located on the boundary of the quantum PM-AFI transition, pointing to the possible emergence of unconventional topological electronic phases related possibly to the correlated Weyl electrons.

  9. Mg doping of thermochromic VO2 films enhances the optical transmittance and decreases the metal-insulator transition temperature

    NASA Astrophysics Data System (ADS)

    Mlyuka, N. R.; Niklasson, G. A.; Granqvist, C. G.

    2009-10-01

    Thermochromic films of MgxV1-xO2 were made by reactive dc magnetron sputtering onto heated glass. The metal-insulator transition temperature decreased by ˜3 K/at. %Mg, while the optical transmittance increased concomitantly. Specifically, the transmittance of visible light and of solar radiation was enhanced by ˜10% when the Mg content was ˜7 at. %. Our results point at the usefulness of these films for energy efficient fenestration.

  10. Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics

    SciTech Connect

    Zhou You; Ramanathan, Shriram

    2012-10-01

    Monolithic integration of correlated oxide and nitride semiconductors may open up new opportunities in solid-state electronics and opto-electronics that combine desirable functional properties of both classes of materials. Here, we report on epitaxial growth and phase transition-related electrical properties of vanadium dioxide (VO{sub 2}) thin films on GaN epitaxial layers on c-sapphire. The epitaxial relation is determined to be (010){sub vo{sub 2}} parallel (0001){sub GaN} parallel (0001){sub A1{sub 2O{sub 3}}} and [100]{sub vo{sub 2}} parallel [1210]{sub GaN} parallel [0110]{sub A1{sub 2O{sub 3}}} from x-ray diffraction. VO{sub 2} heteroepitaxial growth and lattice mismatch are analyzed by comparing the GaN basal plane (0001) with the almost close packed corrugated oxygen plane in vanadium dioxide and an experimental stereographic projection describing the orientation relationship is established. X-ray photoelectron spectroscopy suggests a slightly oxygen rich composition at the surface, while Raman scattering measurements suggests that the quality of GaN layer is not significantly degraded by the high-temperature deposition of VO{sub 2}. Electrical characterization of VO{sub 2} films on GaN indicates that the resistance changes by about four orders of magnitude upon heating, similar to epitaxial VO{sub 2} films grown directly on c-sapphire. It is shown that the metal-insulator transition could also be voltage-triggered at room temperature and the transition threshold voltage scaling variation with temperature is analyzed in the framework of a current-driven Joule heating model. The ability to synthesize high quality correlated oxide films on GaN with sharp phase transition could enable new directions in semiconductor-photonic integrated devices.

  11. Mid-infrared properties of a VO2 film near the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Choi, H. S.; Ahn, J. S.; Jung, J. H.; Noh, T. W.; Kim, D. H.

    1996-08-01

    A VO2 film was grown on a sapphire(0001) substrate using pulsed laser deposition. The film showed a first-order metal-insulator (MI) transition and its dc conductivity started to increase drastically near 68 °C and changed by three orders of magnitude. Mid-infrared transmittance and reflectance spectra of the VO2 film were measured between 20 °C and 90 °C. Using the intensity transfer-matrix method, the frequency-dependent dielectric constant ɛf(ω) and the conductivity σf(ω) of the film were obtained between 1600 and 4000 cm-1 from the measured transmittance and reflectance spectra. With the ɛf(ω) and σf(ω) spectra, mid-infrared properties of the VO2 film near the MI transition region were investigated in detail. Above 78 °C, ɛf(ω)<0 and dɛf/dω>0, which is a typical metallic behavior. In particular, ɛf(ω) and σf(ω) at 88 °C were analyzed in terms of extended Drude model in which the frequency-dependent scattering rate and the effective mass could be obtained. The mean free path of charge carriers in the dc limit was estimated to be larger by an order of magnitude than the previously reported value, i.e., 4 Å. Below 74 °C, ɛf(ω)>0 and dɛf/dω~=0, which is characteristic of an insulator. Interestingly, ɛf in the insulating region increased as the temperature approached the MI transition temperature. To explain this anomalous behavior, the MI transition of the VO2 film was modeled with coexistence of metallic and insulating domains and their dynamic evolution. Then the behaviors of ɛf(ω) and σf(ω) were explained using the effective medium approximation, which is a mean-field theory predicting a percolation transition. This work clearly demonstrates that the transport and optical properties near the MI transition region are strongly influenced by the connectivity of the metallic domains.

  12. Metal-insulator transition in Nd1-xEuxNiO3: Entropy change and electronic delocalization

    NASA Astrophysics Data System (ADS)

    Jardim, R. F.; Barbeta, V. B.; Andrade, S.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-01

    The metal-insulator (MI) phase transition in Nd1-xEuxNiO3, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat CP(T). The MI transition temperature (TMI) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dTMI/dP were found: (i) for x ≤ 0.15, dTMI/dP is nearly constant and ˜-4.3 K/kbar; (ii) for x ≥ 0.15, dTMI/dP increases with x and it seems to reach a saturation value ˜-6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of TMI. The entropy change (ΔS) at TMI for the sample x = 0, estimated by using the dTMI/dP data and the Clausius-Clapeyron equation, resulted in ΔS ˜ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔSM ˜ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and CP(T) data indicates that the entropy change at TMI is mainly due to the electronic delocalization and not related to the AF transition.

  13. Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

    2016-03-01

    This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

  14. Tuning the metal-insulator transition in NdNiO3 heterostructures via Fermi surface instability and spin fluctuations

    NASA Astrophysics Data System (ADS)

    Dhaka, R. S.; Das, Tanmoy; Plumb, N. C.; Ristic, Z.; Kong, W.; Matt, C. E.; Xu, N.; Dolui, Kapildeb; Razzoli, E.; Medarde, M.; Patthey, L.; Shi, M.; Radović, M.; Mesot, Joël

    2015-07-01

    We employed in situ pulsed laser deposition (PLD) and angle-resolved photoemission spectroscopy (ARPES) to investigate the mechanism of the metal-insulator transition (MIT) in NdNiO3 (NNO) thin films, grown on NdGaO3(110) and LaAlO3(100) substrates. In the metallic phase, we observe three-dimensional hole and electron Fermi surface (FS) pockets formed from strongly renormalized bands with well-defined quasiparticles. Upon cooling across the MIT in NNO/NGO sample, the quasiparticles lose coherence via a spectral weight transfer from near the Fermi level to localized states forming at higher binding energies. In the case of NNO/LAO, the bands are apparently shifted upward with an additional holelike pocket forming at the corner of the Brillouin zone. We find that the renormalization effects are strongly anisotropic and are stronger in NNO/NGO than NNO/LAO. Our study reveals that substrate-induced strain tunes the crystal field splitting, which changes the FS properties, nesting conditions, and spin-fluctuation strength, and thereby controls the MIT via the formation of an electronic order parameter with QAF˜(1 /4 ,1 /4 ,1 /4 ±δ ) .

  15. Unusual M2-mediated metal-insulator transition in epitaxial VO2 thin films on GaN substrates

    NASA Astrophysics Data System (ADS)

    Yang, Hyoung Woo; Inn Sohn, Jung; Yang, Jae Hoon; Jang, Jae Eun; Cha, Seung Nam; Kim, Jongmin; Kang, Dae Joon

    2015-01-01

    We report on the epitaxial growth of vanadium dioxide (\\text{VO}2) thin films on (0001) GaN substrates using a radio frequency magnetron sputtering method and discuss their unusual M2-mediated metal-insulator transition (MIT) properties. We found that large lattice misfits between the \\text{VO}2 film and the GaN substrate could favor the stabilization of the intermediate insulating \\text{M}2 phase, which is known to be observed only in either doped or uniaxially strained samples. We demonstrated that the MIT in \\text{VO}2 films on GaN substrates could be mediated via a monoclinic \\text{M}2 phase during the transition from a monoclinic \\text{M}1 to a rutile R phase. This was confirmed by temperature-dependent Raman studies that exhibited both an evident upshift of a high-frequency phonon mode (ω\\text{V-O}) from 618 \\text{cm}-1 (\\text{M}1) to 645 \\text{cm}-1 (\\text{M}2) and a distinct peak splitting of a low-frequency phonon mode (ω\\text{V-V}) at 221 \\text{cm}-1 (\\text{M}2) for increasing temperatures. Moreover, a resistance change of four orders of magnitude was observed for \\text{VO}2 thin films on GaN substrates, being indicative of the high quality of \\text{VO}2 thin films. This study may offer great opportunities not only to improve the understanding of M2-mediated MIT behavior in \\text{VO}2 thin films, but also to realize novel electronic and optoelectronic devices.

  16. Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2016-02-01

    Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

  17. Metal-insulator transition in an one-dimensional half-filled interacting mesoscopic ring with spinless fermions: Exact results

    NASA Astrophysics Data System (ADS)

    Saha, Madhumita; Maiti, Santanu K.

    2016-04-01

    We calculate persistent current of one-dimensional rings of fermions neglecting the spin degrees of freedom considering only nearest-neighbor Coulomb interactions with different electron fillings in both ordered and disordered cases. We treat the interaction exactly and find eigenenergies by exact diagonalization of many-body Hamiltonian and compute persistent current by numerical derivative method. We also determine Drude weight to estimate the conducting nature of the system. From our numerical results, we obtain a metal-insulator transition in half-filled case with increasing correlation strength U but away from half-filling no such transition is observed even for large U.

  18. Disproportionation, Metal-Insulator Transition, and Critical Interaction Strength in Na1/2CoO2

    NASA Astrophysics Data System (ADS)

    Kunes, Jan

    2006-03-01

    Spontaneous breaking of symmetry is one of the key concepts of solid state physics related to phase transitions. Charge/spin density wave, or charge/spin ordering if the propagation vector is commensurate, are notorious examples of broken symmetry. The charge disproportionation in Na0.5CoO2 is the main theme of the present work. The results of LDA+U calculations will be presented, exhibiting a charge disproportionation transition at U 3eV. NaxCoO2 attracted considerable attention mainly due to superconductivity of its hydrated form Na0.3CoO2.1.3H2O [1]. Besides the superconductivity NaxCoO2 exhibits several intriguing properties throughout its phase diagram, such crossover from Pauli-like to Curie-Weiss susceptibility at x=0.5, spin-density wave around x=0.7 or several phase transitions for x=0.5 including metal-insulator transition, charge ordering and magnetic ordering [2]. The NaxCoO2 lattice consists of triangular CoO2 layers separated by Na layer. The mobility of Na ions and fractional occupation of Na sublattice provides an additional complication. Using LDA+U functional within FPLO [3] bandstructure method we have performed series of supercell calculations allowing for breaking of the symmetry between different Co sites. We have found that for large enough, but physically realistic, values of the on-site Coulomb interaction U the Co sublattice disproportionates into sites with formal valencies Co^4+ and Co^3+. We have found that at the same time a gap opens in the excitation spectrum. Details of the bandstructure across the transition as well as the driving forces of the transition in the LDA+U mean field picture will be discussed. [1] K. Takada et al., Nature (London) 422, 53 (2003).[2] M. L. Foo et al., Phys. Rev. Lett. 92, 247001 (2004).[3] K. Koepernik and H. Eschrig, Phys. Rev. B 59, 1743 (1999).

  19. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality.

  20. Strain-induced significant increase in metal-insulator transition temperature in oxygen-deficient Fe oxide epitaxial thin films

    PubMed Central

    Hirai, Kei; Kan, Daisuke; Ichikawa, Noriya; Mibu, Ko; Yoda, Yoshitaka; Andreeva, Marina; Shimakawa, Yuichi

    2015-01-01

    Oxygen coordination of transition metals is a key for functional properties of transition-metal oxides, because hybridization of transition-metal d and oxygen p orbitals determines correlations between charges, spins and lattices. Strain often modifies the oxygen coordination environment and affects such correlations in the oxides, resulting in the emergence of unusual properties and, in some cases, fascinating behaviors. While these strain effects have been studied in many of the fully-oxygenated oxides, such as ABO3 perovskites, those in oxygen-deficient oxides consisting of various oxygen coordination environments like tetrahedra and pyramids as well as octahedra remain unexplored. Here we report on the discovery of a strain-induced significant increase, by 550 K, in the metal-insulator transition temperature of an oxygen-deficient Fe oxide epitaxial thin film. The observed transition at 620 K is ascribed to charge disproportionation of Fe3.66+ into Fe4+ and Fe3+, associated with oxygen-vacancy ordering. The significant increase in the metal-insulator transition temperature, from 70 K in the bulk material, demonstrates that epitaxial growth of oxygen-deficient oxides under substrate-induced strain is a promising route for exploring novel functionality. PMID:25600001

  1. Nitride-Based UV Metal-Insulator-Semiconductor Photodetector with Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Hwang, J. D.; Yang, Gwo Huei; Yang, Yuan Yi; Yao, Pin Cuan

    2005-11-01

    A low-temperature (30-40°C), low-cost and reliable method of liquid phase deposition (LPD) has been employed to grow SiO2 layers on GaN. The LPD process uses a supersaturated acid aqueous solution of hydrofluosilicic (H2SiF6) as a source liquid and an aqueous solution of boric acid (H3BO3) as a deposition rate controller. In this study, the LPD SiO2 was prepared at 40°C with concentrations of H2SiF6 and H3BO3 at 0.2 and 0.01 M, respectively. The minimum interface-trap density, Dit, of a metal-insulator-semiconductor (MIS) capacitor with a structure of Al/20 nm LPD-SiO2/n-GaN was estimated to be 8.4× 1011 cm-2 V-1. Furthermore, a MIS photodetector with a 10-nm-thick LPD-SiO2 layer has been fabricated successfully. The dark current density was as low as 4.41× 10-6 A/cm2 for an applied field of 4 MV/cm. A maximum responsivity of 0.112 A/W was observed for incident ultraviolet light of 366 nm with an intensity of 4.15 mW/cm2. Defect-assisted tunneling was invoked to explain these results.

  2. Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Cai, Xinxin; Zhang, Yuhe; Peng, Jin; Mao, Zhiqiang; Liu, Ying

    2014-06-01

    We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on the ab face of a thin Ca3Ru2O7 flake exfoliated from bulk single crystals that were grown by a floating zone method. The devices were categorized into two types: those with their electrical transport properties dominated by c-axis transport in type A or that of the in-plane in type B devices. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in type A but not type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a type B device revealed a shift in critical temperature of the structural and metal-insulator transition, suggesting that this transition is tunable by the electric field effect.

  3. Metal insulator transition with ferrimagnetic order in epitaxial thin films of spinel NiCo2O4

    NASA Astrophysics Data System (ADS)

    Silwal, Punam; Miao, Ludi; Stern, Ilan; Zhou, Xiaolan; Hu, Jin; Ho Kim, Dae

    2012-01-01

    We have grown epitaxial thin films of spinel NiCo2O4 on single crystalline MgAl2O4 (001) substrates by pulsed laser deposition. Magnetization measurement revealed hysteresis loops consistent with the reported ferrimagnetic order. The electrical transport exhibits a metallic behavior with the lowest resistivity of 0.8 mΩ cm and a metal insulator transition around the Néel temperature. The systematic variation in the properties of the films grown at different growth temperatures indicates a close relationship between the magnetic order and electrical transport.

  4. Magnetic field induced lattice effects in a quasi-two-dimensional organic conductor close to the Mott metal-insulator transition

    NASA Astrophysics Data System (ADS)

    de Souza, Mariano; Brühl, Andreas; Strack, Christian; Schweitzer, Dieter; Lang, Michael

    2012-08-01

    We present ultra-high-resolution dilatometric studies in magnetic fields on a quasi-two-dimensional organic conductor κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br, which is located close to the Mott metal-insulator (MI) transition. The obtained thermal expansion coefficient, α(T), reveals two remarkable features: (i) the Mott MI transition temperature TMI=(13.6±0.6) K is insensitive to fields up to 10 T, the highest applied field; (ii) for fields along the interlayer b axis, a magnetic field induced (FI) phase transition at TFI=(9.5±0.5) K is observed above a threshold field Hc˜1 T, indicative of a spin reorientation with strong magnetoelastic coupling.

  5. Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

    NASA Astrophysics Data System (ADS)

    Bharathi, R.; Naorem, Rameshwari; Umarji, A. M.

    2015-08-01

    We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (P21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 ^\\circ C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 μ m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

  6. Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

    PubMed

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  7. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    NASA Astrophysics Data System (ADS)

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-08-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or `Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

  8. Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

    PubMed Central

    Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

    2014-01-01

    The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

  9. Magnetic and Metal-Insulator Transition in natural Transition Metal Sulfides

    NASA Astrophysics Data System (ADS)

    Wang, Renxiong; Metz, Tristin; Liu, I.-Lin; Wang, Kefeng; Wang, Xiangfeng; Jeffries, J. R.; Saha, S. R.; Greene, R. L.; Paglione, J.; Santelli, C. C.; Post, J.,

    In collaboration with the Smithsonian Institution's National Museum of Natural History, we present detailed studies of a class of natural minerals with potential to harbor correlated behavior. Transition metal sulfide minerals, such as Bornite (Cu5FeS4), are an important family of compounds known for their thermoelectric properties. We will present low temperature experimental studies of magnetic transitions and focus on a compound that exhibits a metal to insulator transition concident with entrance to an antiferromagnetic ground state, suggesting a potentially interesting system with promise for realizing new correlated states of matter in a naturally occurring mineral.

  10. Bond formation effects on the metal-insulator transition in the half-filled kagome Hubbard model

    NASA Astrophysics Data System (ADS)

    Higa, Ryota; Asano, Kenichi

    2016-06-01

    We study the metal-insulator transition in the half-filled Hubbard model on a Kagome lattice using the variational cluster approximation. The strong coupling limit of the model corresponds to the S =1 /2 Kagome Heisenberg antiferromagnet, which is known to have a singlet ground state, although its detail is still debated. As the results of the cluster methods generally depend much on the choice of the unit cluster, we have chosen the clusters that are compatible with these singlet ground states in the strong coupling case found so far, which basically consist of even number of sites. It is found that the correlated electrons on the Kagome lattice have a strong tendency to form valence-bond structures, which are the resonation of electrons on a single bond or several bonds forming loops. The zero-temperature metal-insulator transition at some interaction strength is possibly driven by the formation of such short range valence bonds and shows a second order character, which is distinctive from the Brinkman-Rice scenario. The electrons on these valence bonds further localizes onto each site as the interaction increases, and the valence bonds of electrons finally turn into magnetic singlet bonds between localized S =1 /2 spins, which are consistent with the ground states of the Kagome antiferromagnet.

  11. Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

    NASA Astrophysics Data System (ADS)

    Gold, A.

    1991-10-01

    Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

  12. Magnetic Superstructure and Metal-Insulator Transition in Mn-Substituted Sr3 Ru 2 O 7

    NASA Astrophysics Data System (ADS)

    Hossain, M. A.; Zhu, Z. H.; Bohnenbuck, B.; Chuang, Y.-D.; Yoshida, Y.; Hussain, Z.; Keimer, B.; Elfimov, I. S.; Sawatzky, G. A.; Damascelli, A.

    2011-03-01

    We present a temperature-dependent resonant elastic soft x-ray scattering (REXS) study of the metal-insulator transition in Sr 3 (Ru 1-x Mn x)2 O7 , performed at both Ru and Mn L -edges. Resonant magnetic superstructure reflections together with ab-initio density functional theory calculations identify the ground state as a spin checkerboard with blocks of 4 spins up and 4 spins down. Based on modelling of the REXS intensity from randomly distributed Mn impurities, we establish the inhomogeneous nature of the metal-insulator transition, with an effective percolation threshold corresponding to an anomalously low x ~ 0.05 Mn substitution. Perhaps more important, our results suggest that the same checkerboard instability might be present already in the parent compound Sr 3 Ru 2 O7 . In collaboration with: A.G. Cruz Gonzalez, J.D. Denlinger (Berkeley) I. Zegkinoglou, M.W. Haverkort (MPI) J. Geck, D.G. Hawthorn (UBC) R. Mathieu, Y. Tokura, S. Satow, H. Takagi (Tokyo) H.-H. Wu and C. Schussler-Langeheine (Cologne).

  13. In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower

    NASA Astrophysics Data System (ADS)

    Faniel, S.; Moldovan, L.; Vlad, A.; Tutuc, E.; Bishop, N.; Melinte, S.; Shayegan, M.; Bayot, V.

    2007-10-01

    We report thermopower measurements in dilute (311)A GaAs two-dimensional holes subjected to an in-plane magnetic field B that drives the system through a metal-insulator transition (MIT). The diffusion thermopower Sd decreases linearly with temperature at low B for both low-mobility [011¯] and high-mobility [2¯33] directions, as expected for metallic systems. At high B , in the insulating phase, Sd changes sign along [011¯] , while Sd drops to zero along [2¯33] . This behavior suggests that the system does not undergo any ground-state modification but, rather, that the apparent MIT transition is accompanied by a dramatic change in the dominant scattering mechanisms.

  14. Metal-insulator transition in NiS2-x Se x : chemical vs external pressure effects

    NASA Astrophysics Data System (ADS)

    Marini, C.; Valentini, M.; Perucchi, A.; Dore, P.; Sarma, D. D.; Lupi, S.; Postorino, P.

    2011-03-01

    The Se alloying (x)- and the pressure (P)-induced metal-insulator transitions on the strongly correlated NiS2-x Se x system have been investigated through Raman and infrared (IR) spectroscopies. Raman and IR responses of NiS2 to lattice compression are correlated to a metallization transition, occurring at ∼4 GPa. This result suggests a strong interaction between lattice and electronic degrees of freedom. In particular, IR measurements carried out by applying P on NiS2 (i.e. lattice contraction) and on Se alloying (i.e. lattice expansion) reveal that in both cases a metallic state is obtained. Our optical spectroscopy results deviate from the idea of a simple scaling factor between P and x previously claimed by transport measurements, but, on the contrary, point out the substantially different microscopic origin of the two transitions.

  15. Mott metal-insulator transition induced by utilizing a glasslike structural ordering in low-dimensional molecular conductors

    NASA Astrophysics Data System (ADS)

    Hartmann, Benedikt; Müller, Jens; Sasaki, Takahiko

    2014-11-01

    We utilize a glasslike structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt κ -(BEDT-TTF)2Cu [N (CN)2Br ]. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C-C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glasslike ordering transition at Tg˜75 K. When cooling through Tg, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at Tg of the order of several 1000 K /min . The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth W with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio (W/U ) c of bandwidth to on-site Coulomb repulsion U . Due to the glassy character of the transition, the effect is persistent below Tg and can be reversibly repeated by melting the frozen configuration upon warming above Tg. Both by exploiting the characteristics of slowly changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

  16. Metal-Insulator Transition in VO2 : A DFT +DMFT Perspective

    NASA Astrophysics Data System (ADS)

    Brito, W. H.; Aguiar, M. C. O.; Haule, K.; Kotliar, G.

    2016-07-01

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M1 and M2 monoclinic (insulating) phases of VO2 employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO2 , and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO2 : undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M2 phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M1 phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M1 phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments.

  17. Metal-Insulator Transition in VO_{2}: A DFT+DMFT Perspective.

    PubMed

    Brito, W H; Aguiar, M C O; Haule, K; Kotliar, G

    2016-07-29

    We present a theoretical investigation of the electronic structure of rutile (metallic) and M_{1} and M_{2} monoclinic (insulating) phases of VO_{2} employing a fully self-consistent combination of density functional theory and embedded dynamical mean field theory calculations. We describe the electronic structure of the metallic and both insulating phases of VO_{2}, and propose a distinct mechanism for the gap opening. We show that Mott physics plays an essential role in all phases of VO_{2}: undimerized vanadium atoms undergo classical Mott transition through local moment formation (in the M_{2} phase), while strong superexchange within V dimers adds significant dynamic intersite correlations, which remove the singularity of self-energy for dimerized V atoms. The resulting transition from rutile to dimerized M_{1} phase is adiabatically connected to the Peierls-like transition, but is better characterized as the Mott transition in the presence of strong intersite exchange. As a consequence of Mott physics, the gap in the dimerized M_{1} phase is temperature dependent. The sole increase of electronic temperature collapses the gap, reminiscent of recent experiments. PMID:27517782

  18. Theory of the metal-insulator transition in Pr Ru4 P12 and Pr Fe4 P12

    NASA Astrophysics Data System (ADS)

    Curnoe, S. H.; Harima, H.; Takegahara, K.; Ueda, K.

    2004-12-01

    All symmetry-allowed couplings between the 4f2 -electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron, or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3¯→Pmmm and Im3¯→Pm3¯ , respectively. In former case, the lower point group symmetry splits the degeneracy of the 4f2 doublet into states with opposite quadrupole moment, which then leads to antiquadrupolar ordering, as in PrFe4P12 . Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12 . We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space-group reduction Im3¯→Pm3¯ ) open a gap everywhere on the Fermi surface.

  19. Tunable Anderson metal-insulator transition in quantum spin-Hall insulators

    NASA Astrophysics Data System (ADS)

    Chen, Chui-Zhen; Liu, Haiwen; Jiang, Hua; Sun, Qing-feng; Wang, Ziqiang; Xie, X. C.

    2015-06-01

    We numerically study disorder effects in the Bernevig-Hughes-Zhang (BHZ) model, and we find that the Anderson transition of a quantum spin-Hall insulator (QSHI) is determined by model parameters. The BHZ Hamiltonian is equivalent to two decoupled spin blocks that belong to the unitary class. In contrast to the common belief that a two-dimensional unitary system scales to an insulator except at certain critical points, we find, through calculations scaling properties of the localization length, level statistics, and participation ratio, that a possible exotic metallic phase emerges between the QSHI and normal insulator phases in the InAs/GaSb-type BHZ model. On the other hand, direct transition from a QSHI to a normal insulator is found in the HgTe/CdTe-type BHZ model. Furthermore, we show that the metallic phase originates from the Berry phase and can survive both inside and outside the gap.

  20. Full-configuration-interaction study of the metal-insulator transition in model systems: Peierls dimerization in H(n) rings and chains.

    PubMed

    Giner, Emmanuel; Bendazzoli, Gian Luigi; Evangelisti, Stefano; Monari, Antonio

    2013-02-21

    The Peierls dimerization with associated metal-insulator transition is studied in a model systems with ab initio methods. These are chains and rings H(N) of hydrogen atoms treated by full CI using a minimal STO-3G atomic orbital basis for N = 6 to N = 14. We describe and discuss in some detail the potential energy surface governing Peierls' dimerization and study the localization tensor as the indicator of the metal-insulator transition. Results for linear chains and rings are compared. PMID:23445017

  1. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO3 thin films grown by polymer-assisted deposition

    NASA Astrophysics Data System (ADS)

    Yao, Dan; Shi, Lei; Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-01

    The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  2. Plasmonic effects on the laser-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; MacQuarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconducting to metallic phase transition that can be induced thermally, optically, or electrically. When switched to the high-temperature (T > 68°C) metallic phase, the greatest contrast in the optical properties occurs at wavelengths in the near-to-mid-infrared and beyond. In the visible to near-infrared, however, upon switching for wavelengths between ~500-1000 nm, VO2 transmits more light in the metallic phase. In this paper, we report studies of the effect of near-IR irradiation (785 nm) on lithographically prepared arrays of gold nanoparticles (NPs) covered with a thin film of VO2 and find that the presence of the NPs substantially lowers the laser threshold for low-power induction of the phase transition. Hybrid Au::VO2 structures were created by coating lithographically prepared arrays of gold nanoparticles (NPs) (diameters 140 and 200 nm, array spacing 450 nm) with 60 nm thick films of VO2 by pulsed laser deposition. Due to resonant absorption of the Au particle-plasmon resonance (PPR) at 785 nm, a temperature-dependent shift in the PPR can be generated by switching the VO2 from one phase to another. We have measured the switching behavior of VO2 and Au::VO2 structures using shuttered CW laser irradiation in order to study both optical and thermal mechanisms of the phase transition. Transient absorption measurements using a shuttered 785 nm pump laser corresponding to the PPR resonance of the Au NPs and 1550 nm CW probe show that the presence of the Au NPs lowers the threshold laser power required to induce the phase transition.

  3. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    SciTech Connect

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  4. Superconductor-Metal-Insulator transition in two dimensional Ta thin Films

    NASA Astrophysics Data System (ADS)

    Park, Sun-Gyu; Kim, Eunseong

    2013-03-01

    Superconductor-insulator transition has been induced by tuning film thickness or magnetic field. Recent electrical transport measurements of MoGe, Bi, Ta thin films revealed an interesting intermediate metallic phase which intervened superconducting and insulating phases at certain range of magnetic field. Especially, Ta thin films show the characteristic IV behavior at each phase and the disorder tuned intermediate metallic phase [Y. Li, C. L. Vicente, and J. Yoon, Physical Review B 81, 020505 (2010)]. This unexpected metallic phase can be interpreted as a consequence of vortex motion or contribution of fermionic quasiparticles. In this presentation, we report the scaling behavior during the transitions in Ta thin film as well as the transport measurements in various phases. Critical exponents v and z are obtained in samples with wide ranges of disorder. These results reveal new universality class appears when disorder exceeds a critical value. Dynamical exponent z of Superconducting sample is found to be 1, which is consistent with theoretical prediction of unity. z in a metallic sample is suddenly increased to be approximately 2.5. This critical exponent is much larger than the value found in other system and theoretical prediction. We gratefully acknowledge the financial support by the National Research Foundation of Korea through the Creative Research Initiatives.

  5. Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    PubMed

    Li, Dasheng; Sharma, Abhishek A; Gala, Darshil K; Shukla, Nikhil; Paik, Hanjong; Datta, Suman; Schlom, Darrell G; Bain, James A; Skowronski, Marek

    2016-05-25

    DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model. PMID:27136956

  6. Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Yoon, Joonseok; Kim, Howon; Mun, Bongjin Simon; Park, Changwoo; Ju, Honglyoul

    2016-03-01

    The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO2) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO2. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT in various-sized devices. Our findings on VO2 can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.

  7. Tuning directional dependent metal-insulator transitions in quasi-1D quantum wires with spin-orbit density wave instability.

    PubMed

    Das, Tanmoy

    2016-07-27

    We study directional dependent band gap evolutions and metal-insulator transitions (MITs) in model quantum wire systems within the spin-orbit density wave (SODW) model. The evolution of MIT is studied as a function of varying anisotropy between the intra-wire hopping ([Formula: see text]) and inter-wire hopping ([Formula: see text]) with Rashba spin-orbit coupling. We find that as long as the anisotropy ratio ([Formula: see text]) remains below 0.5, and the Fermi surface nesting is tuned to [Formula: see text], an exotic SODW induced MIT easily develops, with its critical interaction strength increasing with increasing anisotropy. As [Formula: see text] (2D system), the nesting vector switches to [Formula: see text], making this state again suitable for an isotropic MIT. Finally, we discuss various physical consequences and possible applications of the directional dependent MIT. PMID:27248294

  8. Optically induced metal-insulator transition in gold::vanadium dioxide hybrid structures

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Kaye, Anthony; Haglund, Richard F., Jr.

    2010-03-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semi-conducting to metallic phase transition that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameters up to 200 nm with 60 nm thick films of VO2 via pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a chopped 780 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Additionally, pump-probe measurements were conducted on the structures using a Ti:sapphire oscillator with 100-fs pulses. Results show that the presence of Au NPs lowers the threshold laser power required to induce the phase transition. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  9. Tuning the metal-insulator transition temperature of Sm0.5Nd0.5NiO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gardner, H. Jeffrey; Singh, Vijay; Zhang, Le; Hong, Xia

    2014-03-01

    We have investigated the effect of substrate induced strain and film thickness on the metal-insulator transition of the correlated oxide Sm0.5Nd0.5NiO3 (SNNO). We have fabricated epitaxial 3 - 40 nm thick SNNO films on (001) LaAlO3 (LAO), (001) SrTiO3 (STO), and (110) NdGaO3 (NGO) via off-axis RF magnetron sputtering. The SNNO films are atomically smooth with (001) orientation as determined by atomic force microscopy and x-ray diffraction. SNNO films grown on LAO, subject to compressive strain, exhibit a sharp metal-insulator transition at lower temperatures. Conversely, films grown on STO and NGO, subject to tensile strain, exhibit a smeared albeit above room temperature metal-insulator transition. For all substrates, we have observed that the metal-insulator transition temperature (TMI) increases monotonically with decreasing film thickness until the electrically dead layer is reached (below 4 nm). We discuss the effect of strain and oxygen deficiencies on the TMI of SNNO thin films.

  10. Volume-based considerations for the metal-insulator transition of CMR oxides

    SciTech Connect

    Neumeier, J.J.; Hundley, M.F.; Cornelius, A.L.; Andres, K.

    1998-03-01

    The sensitivity of {rho} [electrical resistivity] to changes in volume which occur through: (1) applied pressure, (2) variations in temperature, and (3) phase transitions, is evaluated for some selected CMR oxides. It is argued that the changes in volume associated with phase changes are large enough to produce self pressures in the range of 0.18 to 0.45 GPa. The extreme sensitivity of the electrical resistivity to pressure indicates that these self pressures are responsible for large features in the electrical resistivity and are an important component for occurrence the metallicity below {Tc}. It is suggested that this is related to a strong volume dependence of the electron phonon coupling in the CMR oxides.

  11. Universal role of quantum uncertainty in Anderson metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Cheng, W. W.; Zhang, Z. J.; Gong, L. Y.; Zhao, S. M.

    2016-07-01

    We explore quantum uncertainty, based on Wigner-Yanase skew information, in various one-dimensional single-electron wave functions. For the power-law function and eigenfunctions in the Aubry-André model, the electronic localization properties are well-defined. For them, we find that quantum uncertainty is relatively small and large for delocalized and localized states, respectively. And around the transition points, the first-order derivative of the quantum uncertainty exhibits singular behavior. All these characters can be used as signatures of the transition from a delocalized phase to a localized one. With this criterion, we also study the quantum uncertainty in one-dimensional disorder system with long-range correlated potential. The results show that the first-order derivative of spectrum-averaged quantum uncertainty is minimal at a certain correlation exponent αm for a finite system, and has perfect finite-size scaling behaviors around αm. By extrapolating αm, the threshold value αc ≃ 1.56 ± 0.02 is obtained for the infinite system. Thus we give another perspective and propose a consistent interpretation for the discrepancies about localization property in the long-range correlated potential model. These results suggest that the quantum uncertainty can provide us with a new physical intuition to the localization transition in these models.

  12. Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2014-10-01

    The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x =0-0.06) grown on α-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S | values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T>TS were constant at low values of 23μVK-1 independently of x, which reflects a metallic electronic structure, whereas those at T

  13. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).

    PubMed

    Martens, K; Jeong, J W; Aetukuri, N; Rettner, C; Shukla, N; Freeman, E; Esfahani, D N; Peeters, F M; Topuria, T; Rice, P M; Volodin, A; Douhard, B; Vandervorst, W; Samant, M G; Datta, S; Parkin, S S P

    2015-11-01

    The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO(2) has remained elusive. Here we report its measurement enabled by epitaxial VO(2) and atomic layer deposited high-κ dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to ∼5×10(13)  cm(-2) which are trongly localized, as shown by their low, thermally activated mobility (∼1×10(-3)  cm(2)/V s at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto)electronics of VO(2). PMID:26588400

  14. Giant oxygen isotope effect on the metal-insulator transition of RNiO{sub 3} perovskites

    SciTech Connect

    Medarde, M.; Fauth, F.; Furrer, A.; Lacorre, P.; Conder, K.

    1998-08-01

    The metal to insulator transition displayed by all the members of the perovskite family RNiO{sub 3} (R = 4f rare earth different from La) has attracted a lot of interest since it constitutes one of the few examples of this phenomenon in perfectly stoichiometric compounds. In spite of the great deal of work performed during the last six years, the mechanism responsible for the electronic localization is still a matter of controversy. The observation of unusually large O isotope shifts on the metal-insulator temperature T{sub MI} reported in this study represents an important advance since it clearly proves the dominant role of the electron lattice interaction as driving force for the transition. Moreover, the good agreement between this observation and a simple model based on the existence of Jahn-Teller polarons in the metallic state gives further qualitative and quantitative support to the polaronic picture recently suggested to account for O isotope effects in other 3d transition metal oxides containing Jahn-Teller ions.

  15. Metal-insulator transition in a spin-orbital-lattice coupled Mott system: K2V8O16

    NASA Astrophysics Data System (ADS)

    Kim, Sooran; Kim, Beom Hyun; Kim, Kyoo; Min, B. I.

    2016-01-01

    We have explored the underlying mechanism of the metal-insulator transition (MIT) in hollandite-type vanadate, K2V8O16 , which has a quasi-one-dimensional chain structure and undergoes the MIT and Peierls-like structural transition upon cooling. For this purpose, we have investigated its electronic and magnetic properties in comparison to those of Rb2V8O16 that also undergoes the MIT but without the Peierls-like structural distortion. We have found that K2V8O16 is a spin-orbital-lattice coupled Mott system and manifests the orbital-selective Mott transition. The interplay of on-site Coulomb interaction, the magnetic-exchange interaction, and the Jahn-Teller-type tetragonal distortion plays an essential role in driving the MIT of K2V8O16 , inducing the the charge ordering (CO) and orbital ordering of V t2 g bands. The CO of V+3 and V+4 occurs in separate chains, preserving the inversion symmetry of the crystal. The dx y orbitals form the spin-singlet state along the chain direction. The Peierls-like distortion does not play an essential role in the MIT.

  16. Heavy holes localization, metal-insulator transition and superconductivity of HTSC oxides

    SciTech Connect

    Golovashkin, A.I.; Anshukova, N.V.; Ivanova, L.I.; Maljuchkov, O.T.; Rusakov, A.P.

    1996-12-31

    On the basis of experimental studies of specific heat, magnetic properties and thermal expansion it was shown that dielectric-metal phase transition was the consequence of delocalization of heavy holes located on metal-apical oxygen bonds in the high-temperature superconducting (HTSC) oxide systems. The dielectric gaps in electronic spectrum of the oxide systems appear owing to the charge density waves (CDW) of the ordered arrays of such localized (heavy) holes. The CDW is the microscopic reason of the negative thermal expansion observed in dielectric phases of some HTSC systems. The free carriers introduced in the oxide systems by doping can couple through excitations of these localized holes (local bosons). Such free carriers pairing leads to the high-temperature superconductivity with small coherence length and anomalous (with positive curvature) temperature dependence of H{sub c2}(T). The suggested localized holes on the metal-apical oxygen bonds and local bosons in addition to the usual phonons are the basis for the explanation of the experimental data presented in this report.

  17. Field-induced quantum metal-insulator transition in the pyrochlore iridate Nd2Ir2O7

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming; Kohama, Yoshimitsu; Tomita, Takahiro; Ishizuka, Hiroaki; Hsieh, Timothy H.; Ishikawa, Jun J.; Kindo, Koichi; Balents, Leon; Nakatsuji, Satoru

    2016-02-01

    The metal-insulator transition (MIT) is a hallmark of strong correlation in solids. Quantum MITs at zero temperature have been observed in various systems tuned by either carrier doping or bandwidth. However, such transitions have rarely been induced by application of magnetic field, as normally the field scale is too small in comparison with the charge gap, whose size is a fraction of the Coulomb repulsion energy (~1 eV). Here we report the discovery of a quantum MIT tuned by a field of ~10 T, whose magnetoresistance exceeds 60,000%. In particular, our anisotropic magnetotransport measurements on the cubic insulator Nd2Ir2O7 (ref. ) reveal that the insulating state can be suppressed by such a field to a zero-temperature quantum MIT, but only for fields near the [001] axis. The strong sensitivity to the field direction is remarkable for a cubic crystal, as is the fact that the MIT can be driven by such a small magnetic field, given the 45 meV gap energy, which is of order of 50 times the Zeeman energy for an Ir4+ spin. The systematic change in the MIT from continuous near zero field to first order under fields indicates the existence of a tricritical point proximate to the quantum MIT. We argue that these phenomena imply both strong correlation effects on the Ir electrons and an active role for the Nd spins.

  18. Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO{sub 3} thin films

    SciTech Connect

    Kumar, Yogesh; Choudhary, R. J.; Kumar, Ravi

    2012-10-01

    We report here the strain dependent structural and electrical transport properties of epitaxial NdNiO{sub 3} thin films. Pulsed laser deposition technique was used to grow the NdNiO{sub 3} thin films on c-axis oriented SrTiO{sub 3} single crystals. Deposited films were irradiated using 200 MeV Ag{sup 15+} ion beam at the varying fluence (1 Multiplication-Sign 10{sup 11}, 5 Multiplication-Sign 10{sup 11}, and 1 Multiplication-Sign 10{sup 12} ions/cm{sup 2}). X-ray diffraction studies confirm the epitaxial growth of the deposited films, which is maintained even up to the highest fluence. Rise in the in-plane compressive strain has been observed after the irradiation. All the films exhibit metal-insulator transition, however, a systematic decrease in the transition temperature (T{sub MI}) has been observed after irradiation, which may be attributed to the increase in the in-plane compression. Raman spectroscopy data reveal that this reduction in T{sub MI}, with the irradiation, is related to the decrease in band gap due to the stress generated by the in-plane compressive strain.

  19. XPS and ARPES study of the metal-insulator transition in Mn-substituted Sr3Ru2O7

    NASA Astrophysics Data System (ADS)

    Zhu, Zhihuai; Levy de Castro, G.; Hossain, M. A.; Manju, U.; McCheyney, J. L.; Bostwick, A.; Rotenberg, E.; Yoshida, Y.; Elfimov, I. S.; Panaccione, G.; Damascelli, A.

    2010-03-01

    We have studied the metal-insulator transition in Mn-substituted Sr3Ru2O7 by core-level x-ray photoemission (XPS) and angle-resolved photoemission spectroscopy (ARPES). In XPS, both the surface- and bulk-sensitive spectra show a two-peak structure, corresponding to the well screened and the unscreened excitations. The intensity of the well-screened peak is suppressed upon increasing the concentration of Mn, reflecting a metal-to-insulator transition induced by Mn impurities. In ARPES, changes in Fermi surface topology and band dispersions are observed as the system crosses over from a metal to a - possibly Mott - insulator. We observed a variation and enhancement of the Fermi-surface nesting upon Mn substitution, which might be connected to the emergence of the magnetic superstructure revealed by our resonant elastic soft x-ray scattering results [1].[4pt] [1] M.A. Hossain et al., arXiv:0906.0035 (2009).

  20. Spatial Inhomogeneity in Oxygen Modulated Potassium Tungsten Oxide Thin Films: implications for superconductivity and metal-insulator transitions

    NASA Astrophysics Data System (ADS)

    Munakata, Ko; Luna, Katherine; Tsukada, Akio; Risbud, Subhash; Geballe, Theodore; Beasley, Malcolm

    2012-02-01

    High quality potassium tungsten oxide (K0.33 WOy) films were synthesized by pulsed laser deposition followed by annealing in vacuum. Oxygen concentration modulated anomalous correlation of metal-insulator and superconductivity transitions were studied; a similar scenario was recently suggested in the literature [1] for polycrystalline rubidium tungsten oxide samples. Detailed studies of the transport properties below and above the superconducting transition temperature exhibit a diversity of unexpected behavior. Some of our results can be interpreted as a signature of reduced dimensionality in the ab-plane in oxygen-rich insulating samples, implying a formation of spatially inhomogeneous electronic structure. We compare such phenomenology to the behavior of other materials with strong electron-phonon interactions, and discuss its implication for the possible high temperature superconducting anomaly in sodium tungsten oxides reported in the literature [2]. [1] D. C. Ling et. al., J. Phys. Conf. Ser. 150, 052141 (2009). [2] S. Reich, and Y. Tsabba, Eur. Phys. J. B 9, 1 (1999).

  1. Directing colloidal assembly and a metal-insulator transition using quenched-disordered polymeric networks

    NASA Astrophysics Data System (ADS)

    Phan, Anh; Jadrich, Ryan; Schweizer, Kenneth

    2015-03-01

    Replica integral equation and effective medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly and realize equilibrium states of high electrical conductivity at low physical volume fractions. This is achieved by employing variable mesh size networks of rigid rod or semiflexible polymers as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low dimensional network and fluctuation-driven colloid clustering in the pore spaces, distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. Polymer conformational fluctuations are found to significantly modify the physical adsorption process and hence the ability of colloids to organize along the filamentary network strands. Qualitatively new physical behavior can emerge as the pore size approaches the colloid diameter, reflecting strong frustrating constraints of the template on colloidal assembly.

  2. Low-power laser induced metal-insulator transition in gold::vanadium dioxide nanoarrays

    NASA Astrophysics Data System (ADS)

    Ferrara, Davon W.; Macquarrie, Evan R.; Nag, Joyeeta; Haglund, Richard F.

    2010-10-01

    Vanadium dioxide (VO2) is a strongly-correlated electron material with a well-known semiconductor-to-metal transition (SMT) that can be induced thermally, optically, or electrically. By coating lithographically prepared arrays of gold nanoparticles (NPs) of diameter 140 nm with a 60 nm thick film of VO2 by pulsed laser deposition, hybrid Au::VO2 structures were created. Due to the sensitivity of the Au particle-plasmon resonance (PPR), a temperature dependent shift in the PPR can be generated by switching the VO2 from one phase to another, creating a tunable plasmonic metamaterial. To study the low-power switching characteristics of these structures, transient absorption measurements were made using a mechanically shuttered 785 nm pump laser, corresponding to the PPR resonance of the Au NPs, and 1550 nm CW probe. Results show that the presence of Au NPs significantly lowers the threshold laser power required to induce the SMT. Measurements on arrays of different grating constants (350 nm and 500 nm) support the hypothesis that the particles are acting as ``nano-radiators'' that absorb and redeposit thermal energy by scattering light back into the film. Finite element modeling was performed to better understand the complex thermodynamics of the structure.

  3. Tunable metal-insulator transition in Nd1-xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

    NASA Astrophysics Data System (ADS)

    Shao, Tao; Qi, Zeming; Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Wang, Yu; Zhang, Guobin; Liu, Miao

    2015-07-01

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd1-XYXNiO3 (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340-360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  4. Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Osofsky, M. S.; Krowne, C. M.; Charipar, K. M.; Bussmann, K.; Chervin, C. N.; Pala, I. R.; Rolison, D. R.

    2016-02-01

    The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO3/SrTiO3) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). In this report, we demonstrate the existence of a metal-insulator transition (MIT) in highly disordered RuO2 nanoskins with carrier concentrations that are one-to-six orders of magnitude higher and with mobilities that are one-to-six orders of magnitude lower than those reported previously for 2D oxides. The presence of an MIT and the accompanying atypical electronic characteristics place this form of the oxide in a highly diffusive, strong disorder regime and establishes the existence of a metallic state in 2D that is analogous to the three-dimensional case.

  5. Growth temperature-dependent metal-insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

    NASA Astrophysics Data System (ADS)

    Wang, Liangxin; Yang, Yuanjun; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Luo, Zhenlin; Li, Xiaoguang; Gao, Chen

    2016-04-01

    Vanadium dioxide (VO2) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO3) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal-insulator transition (MIT) behavior of the VO2 epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 102 to 104 with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO2/(111)-SrTiO3 epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO2 films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO2 epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO2 films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO2 can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

  6. The Si(1 1 1) (7 × 7) reconstruction: A surface close to a Mott Hubbard metal insulator transition?

    NASA Astrophysics Data System (ADS)

    Fick, D.; Bromberger, C.; Jänsch, H. J.; Kühlert, O.; Schillinger, R.; Weindel, C.

    2006-09-01

    Li adsorption at extremely low coverages on the "metallic" Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/ T1 is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  7. Metallic Si (111) - (7×7) -reconstruction: A surface close to a Mott-Hubbard metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Schillinger, R.; Bromberger, C.; Jänsch, H. J.; Kleine, H.; Kühlert, O.; Weindel, C.; Fick, D.

    2005-09-01

    Li adsorption at extremely low coverages ( 10-3 ML and below) on the metallic Si(111)-(7×7) surface has been studied by β -NMR experiments (measurement of T1 -times). Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α=1/T1 is almost constant in between 50K and 300K sample temperature and rises considerably above. Comparison with T1 -times around 900K (observed with Li6 -NMR) excludes adsorbate diffusion as the cause of the relaxation rate. Thus the almost temperature independent relaxation rate below 300K points to an extremely localized and thus narrow band (width about 10meV ) which pins the Fermi energy. It is responsible for the metallicity of the (7×7) -reconstruction. Because of the steeply rising relaxation rate beyond 300K this narrow band is located energetically within a gap (approximately 100-500meV wide) in between a lower filled and an upper empty (Hubbard) band. Due to its extremely narrow width it can hardly be detected in photo electron experiments. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.

  8. Electronic properties and the nature of metal-insulator transition in NdNiO3 prepared at ambient oxygen pressure

    NASA Astrophysics Data System (ADS)

    Hooda, M. K.; Yadav, C. S.

    2016-06-01

    We report the electronic properties of the NdNiO3, prepared at the ambient oxygen pressure condition. The metal-insulator transition temperature is observed at 192 K, but the low temperature state is found to be less insulating compared to the NdNiO3 prepared at high oxygen pressure. The electric resistivity, Seebeck coefficient and thermal conductivity of the compound show large hysteresis below the metal-insulator transition. The large value of the effective mass (m*~8me) in the metallic state indicates the narrow character of the 3d band. The electric conduction at low temperatures (T=2-20 K) is governed by the variable range hopping of the charge carriers.

  9. Interfacial reaction between metal-insulator transition material NbO2 thin film and wide band gap semiconductor GaN

    NASA Astrophysics Data System (ADS)

    Posadas, Agham; Kvit, Alexander; Demkov, Alexander

    Materials that undergo a metal-insulator transition (MIT) are potentially useful for a wide variety of applications including electronic and opto-electronic switches, memristors, sensors, and coatings. In most such materials, the MIT is driven by temperature. In one such material, NbO2, the MIT mechanism is primarily of the Peierls-type, in which the dimerization of the Nb atoms without electron correlation causes the transition from metallic to semiconducting. We describe our initial work at combining NbO2 and GaN in epitaxial form, which could be potentially useful in resistive switching devices operating at very high temperatures. We grow NbO2 films on GaN(0001)/Si(111) substrates using reactive molecular beam epitaxy from a metal evaporation source and molecular oxygen. X-ray diffraction shows that the films are found to grow with a single out of plane orientation but with three symmetry-related orientation domains in the plane. In situ x-ray photoelectron spectroscopy confirms that the phase pure NbO2 is formed but that a chemical reaction occurs between the GaN and NbO2 during the growth forming a polycrystalline interfacial layer. We perform STEM-EELS analysis of the film and the interface to further elucidate their chemical and structural properties.

  10. Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variation

    NASA Astrophysics Data System (ADS)

    Crunteanu, Aurelian; Fabert, Marc; Cornette, Julie; Colas, Maggy; Orlianges, Jean-Christophe; Bessaudou, Annie; Cosset, Françoise

    2014-03-01

    We present the vanadium dioxide (VO2) thin films deposition using e-beam evaporation of a vanadium target under oxygen atmosphere on different substrates (sapphire, Si, SiO2/Si…) and we focus on their electrical and optical properties variations as the material undergoes a metal-insulator transition under thermal and electrical stimuli. The phase transition induces extremely abrupt changes in the electronic and optical properties of the material: the electrical resistivity increases up to 5 orders of magnitude while the optical properties (transmission, reflection, refractive index) are drastically modified. We present the integration of these films in simple planar optical devices and we demonstrate electrical-activated optical modulators for visible-infrared signals with high discrimination between the two states. We will highlight a peculiar behavior of the VO2 material in the infrared and far infrared regions (2- 20 μm), namely its anomalous emissivity change under thermal- end electrical activation (negative differential emittance phenomenon) with potential applications in active coatings for thermal regulation, optical limiting or camouflage coatings.

  11. Charge disproportionation without charge transfer in the rare-earth-element nickelates as a possible mechanism for the metal-insulator transition.

    PubMed

    Johnston, Steve; Mukherjee, Anamitra; Elfimov, Ilya; Berciu, Mona; Sawatzky, George A

    2014-03-14

    We study a model for the metal-insulator (M-I) transition in the rare-earth-element nickelates RNiO3, based upon a negative charge transfer energy and coupling to a rocksaltlike lattice distortion of the NiO6 octahedra. Using exact diagonalization and the Hartree-Fock approximation we demonstrate that electrons couple strongly to these distortions. For small distortions the system is metallic, with a ground state of predominantly d8L character, where L_ denotes a ligand hole. For sufficiently large distortions (δdNi-O∼0.05-0.10  Å), however, a gap opens at the Fermi energy as the system enters a periodically distorted state alternating along the three crystallographic axes, with (d8L_2)S=0(d8)S=1 character, where S is the total spin. Thus the M-I transition may be viewed as being driven by an internal volume "collapse" where the NiO6 octahedra with two ligand holes shrink around their central Ni, while the remaining octahedra expand accordingly, resulting in the (1/2, 1/2, 1/2) superstructure observed in x-ray diffraction in the insulating phase. This insulating state is an example of charge ordering achieved without any actual movement of the charge. PMID:24679313

  12. Superconductor-Metal-Insulator Transitions in two dimensional amorphous NbxSi1-x

    NASA Astrophysics Data System (ADS)

    Humbert, Vincent; Couëdo, François; Crauste, Olivier; Bergé, Laurent; Drillien, Anne-Aelle; Akiko Marrache-Kikuchi, Claire; Dumoulin, Louis

    2014-12-01

    We report on the study of the two-dimensional Disorder-induced Superconductor- Insulator Transition (D-SIT) in NbxSi1-x thin films. In this proceeding, we present new results on the emergence of an insulating state from a 2d metallic state.

  13. NMR studies of metal-insulator transition in the spinel-type Cu(Ir1-xVx)2S4

    NASA Astrophysics Data System (ADS)

    Niki, H.; Okuda, H.; Okada, Y.; Higa, K.; Oshiro, M.; Fukuyoshi, N.; Mahoe, R.; Yogi, M.; Nakama, T.; Yagasaki, K.; Ebisu, S.; Nagata, S.

    2011-01-01

    In order to investigate the physical properties of a metal-insulator transition (MIT) on Ir rich side in Cu(Ir1-xVx)2S4 from a microscopic point of view, 63Cu NMR measurements for Cu(Ir1-xVx)2S4 (x = 0.00, 0.03 and 0.05) have been carried out from 4.2 to 300 K. The temperature dependences of the line width, Knight shift and spin-lattice relaxation time (T1) have been measured for these samples. A sudden decreases of the 1/T1T and the negative contribution to the Knight shift from the core polarization of Cu conduction electrons for x = 0.00 and 0.03 samples show clearly the existence of the MIT at TMI = 226 and 175 K, respectively, being attributed to the opening of a band gap below TMI. However, the temperature dependences of the 1/T1T and the Knight shift for x = 0.05 sample change continuously as the band gap is remarkably suppressed below TMI. The density of states at Fermi level in the insulating phase is reduced to about 20 % of that in the metallic phase.

  14. Covalency and the metal-insulator transition in titanate and vanadate perovskites

    NASA Astrophysics Data System (ADS)

    Dang, Hung T.; Millis, Andrew J.; Marianetti, Chris A.

    2014-04-01

    A combination of density functional and dynamical mean-field theory is applied to the perovskites SrVO3, LaTiO3, and LaVO3. We show that DFT + DMFT in conjunction with the standard fully localized-limit (FLL) double-counting predicts that LaTiO3 and LaVO3 are metals even though experimentally they are correlation-driven ("Mott") insulators. In addition, the FLL double counting implies a splitting between oxygen p and transition metal d levels, which differs from experiment. Introducing into the theory an ad hoc double counting correction, which reproduces the experimentally measured insulating gap leads also to a p-d splitting consistent with experiment if the on-site interaction U is chosen in a relatively narrow range (˜6±1 eV). The results indicate that these early transition metal oxides will serve as critical test for the formulation of a general ab initio theory of correlated electron metals.

  15. Exotic topological states near a quantum metal-insulator transition in pyrochlore iridates

    NASA Astrophysics Data System (ADS)

    Tian, Zhaoming

    Pyrochlore iridates have attracted great interest as prime candidates that may host topologically nontrivial states, spin ice ordering and quantum spin liquid states, in particular through the interplay between different degrees of freedom, such as local moments and mobile electrons. Based on our extensive study using our high quality single crystals, we will discuss such examples, i.e. chiral spin liquid in a quadratic band touching state, Weyl semimetallic state and chiral domain wall transport nearby a quantum insulator-semimetal transition in pyrochlore iridates. This work is based on the collaboration with Nakatsuji Satoru, Kohama Yoshimitsu, Tomita Takahiro, Kindo Koichi, Jun J. Ishikawa, Balents Leon, Ishizuka Hiroaki, Timothy H. Hsieh. ZM. Tian was supported by JSPS Postdoctoral Fellowship (No.P1402).

  16. Structurally-driven metal-insulator transition in Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} (0{<=}x<0.14): A single crystal X-ray diffraction study

    SciTech Connect

    Qi, T.F.; Ge, M.; Korneta, O.B.; Parkin, S.; De Long, L.E.; Cao, G.

    2011-04-15

    Correlation between structure and transport properties are investigated in high-quality single-crystals of Ca{sub 2}Ru{sub 1-x}Cr{sub x}O{sub 4} with 0metal-insulator (MI) transition at 357 K. Upon chromium doping on the ruthenium site, the metal-insulator transition temperature (T{sub MI}) was drastically reduced, and is related to the competition between structural changes that occur upon Cr doping and with decreasing temperature. A strong suppression of structural distortions with increasing Cr substitution was identified. No clear T{sub MI} can be observed when x>13.5% and the system behaves as an insulator. Such a large, sharp metal-insulator transition and tuneable transition temperature may have potential applications in electronic devices. -- Graphical abstract: The metal-insulator transition temperature (T{sub MI}) was drastically reduced by Cr doping, and is closely related to the distortion of structure. Display Omitted Research highlights: {yields} The metal-insulator transition temperature (T{sub MI}) was drastically reduced by doping Cr into Ca{sub 2}RuO{sub 4} single crystal. {yields} Detailed single crystal structural analysis provided important insight into this structurally-driven metal-insulator transition. {yields} Negative Volume Thermal Expansion (NVTE) was observed with increasing temperature.

  17. Resistance noise at the metal-insulator transition in thermochromic VO2 films

    NASA Astrophysics Data System (ADS)

    Topalian, Zareh; Li, Shu-Yi; Niklasson, Gunnar A.; Granqvist, Claes G.; Kish, Laszlo B.

    2015-01-01

    Thermochromic VO2 films were prepared by reactive DC magnetron sputtering onto heated sapphire substrates and were used to make 100-nm-thick samples that were 10 μm wide and 100 μm long. The resistance of these samples changed by a factor ˜2000 in the 50 < Ts < 70 °C range of temperature Ts around the "critical" temperature Tc between a low-temperature semiconducting phase and a high-temperature metallic-like phase of VO2. Power density spectra S(f) were extracted for resistance noise around Tc and demonstrated unambiguous 1/f behavior. Data on S(10 Hz)/Rs2 scaled as Rsx, where Rs is sample resistance; the noise exponent x was -2.6 for Ts < Tc and +2.6 for Ts > Tc. These exponents can be reconciled with the Pennetta-Trefán-Reggiani theory [Pennetta et al., Phys. Rev. Lett. 85, 5238 (2000)] for lattice percolation with switching disorder ensuing from random defect generation and healing in steady state. Our work hence highlights the dynamic features of the percolating semiconducting and metallic-like regions around Tc in thermochromic VO2 films.

  18. Topological textures and metal-insulator transition in Reentrant Integer Quantum Hall Effect: role of disorder

    NASA Astrophysics Data System (ADS)

    Lyanda-Geller, Yuli; Simion, George

    2015-03-01

    We investigate a ground state of the two-dimensional (2D) electron liquid in the presence of disorder for Landau level filling factors, for which the re-entrant integer quantum Hall effect is observed. Our particular interest is the range of filling factors, which in a clean 2D system is favorable to formation of the two-electron (2e) bubble crystal. For the smooth random potential due to charged impurities placed far away from the 2D gas, the ground state is a lightly distorted 2e bubble crystal. However, for positively or negatively charged residual impurities located approximately within about three magnetic lengths from the 2D electrons, the ground state contains charged 2e complexes formed either by positively charged impurity and 3e defect bubble, or negatively charged impurity and 2e defect bubble. In the vicinity of 1e and 3e defect bubbles, the 2e bubbles of the crystal change their shape from round to elongated forming hedgehog (for 1e defect) or vortex (for 3e defect) textures. The topological textures due to these complexes interact with vortex and hedgehog excitations, generated as temperature increases that are not bound by residual impurities. The temperature of insulator to metal transition calculated with both bound and unbound defects agrees with experiment. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0010544.

  19. Probing the Metal-Insulator Transition in BaTiO3 by Electrostatic Doping

    NASA Astrophysics Data System (ADS)

    Raghavan, Santosh; Zhang, Jack Y.; Shoron, Omor F.; Stemmer, Susanne

    2016-07-01

    The metal-to-insulator transition in BaTiO3 is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO3/BaTiO3/SrTiO3 heterostructures are doped with a constant sheet carrier density of 3 ×1014 cm-2 that is introduced via the polar SmTiO3/BaTiO3 interface. Below a critical BaTiO3 thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO3/SrTiO3 interfaces. Above this thickness, data indicate that the BaTiO3 layer becomes ferroelectric. The BaTiO3 lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ˜125 K , and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

  20. Tunneling Spectroscopy of Amorphous Magnetic Rare Earth-Si Alloys near the Metal-Insulator Transition

    NASA Astrophysics Data System (ADS)

    Xiong, P.; Zink, B. L.; Tran, M. Q.; Gebala, A. E.; Wilcox, E. M.; Hellman, F.; Dynes, R. C.

    1997-03-01

    Amorphous dilute magnetic semiconductors exhibit striking differences in the electrical and magneto-transport behavior from their crystalline or nonmagnetic analogs.(F. Hellman et al., Phys. Rev. Lett. 77, 4652 (1996).) Magnetic impurities cause a large suppression of conductivity below 50 K in a-Si_xGd_1-x and a-Si_xTb_1-x relative to the nonmagnetic a-Si_xY_1-x (x ~ 0.85-0.9). Application of a magnetic field increases the conductivity by orders of magnitude. We have fabricated good quality tunnel junctions on a-Si:Gd and the nonmagnetic a-Si:Y to probe the electronic density of states in these two systems. We present the results of the tunneling spectroscopy and its magnetic field dependence for a series of the two alloys at different compositions. We will discuss the correlation between the tunneling spectra and the transport properties and its implications on the possible origin of the magnetic field tuned insulator-metal transition in a-Si:Gd. Research Supported by ONR Grant No. N000149151320 and NSF Grant No. DMR-9208599.

  1. Metal-insulator transition in nanostructured SrTiO3/LaAlO3

    NASA Astrophysics Data System (ADS)

    Zhuang, Houlong; Cooper, Valentino R.; Ganesh, P.; Xu, Haixuan; Kent, P. R. C.

    2015-03-01

    It is well known that an insulator-to-metal transition occurs at SrTiO3/LaAlO3 epitaxial heterostructures when the number of LaAlO3 layers reaches a critical value of four. With first-principles calculations, we show that instead of requiring the threshold number of layers to trigger metallicity, the so-called 1+2 overlayer heterostructure also exhibits metallic states. Interestingly, we demonstrate that these metallic states form a two-dimensional electron gas at the overlayer heterostructure. We understand that these fascinating phenomena originate from a modified ``polar catastrophe'' model, where the overlayer heterostructure accumulates an electrostatic potential more rapidly than regular heterostructures, leading to the reduction of number of LAO layers. Using this model, we further show that the thinner 1+1 overlayer heterostructure exhibits a similar 2DEG. Our work provides a novel approach of inducing 2DEGs in oxide heterostructures, which are beneficial for modern electronics applications. HZ, PRCK, VRC and PG were sponsored by the LDRD at ORNL for the U.S. DOE and HX by the University of Tennessee JDRD and UT/ORNL-JIAM programs.

  2. The Unusual Metal-Insulator Transition in Ca(2-x)Sr(x)RuO(4)

    NASA Astrophysics Data System (ADS)

    Rice, T. Maurice

    2002-03-01

    The isoelectronic compounds Ca_2-xSr_xRuO4 offer a rare opportunity to follow the evolution of the electronic structure from a multiband metal, Sr_2RuO_4, to a Mott insulator, Ca_2RuO_4. The evolution is not at all monotonic but proceeds through a series of intermediate regions with unexpected behavior [1]. Sr_2RuO4 is a good metal with the 4 electrons in the t_2g-subshell of the Ru^4+-ions distributed equally in 3 bands. These in turn separate into a d_xy-band which disperses in both directions in the RuO_2-planes and d_xz/d_yz-bands dispersing only in one direction. The hybridization between these components occurs only through very weak interplanar processes. Substituting Ca for Sr leads to band narrowing through a rotation of the RuO_4-octahedra. A series of electronic structure calculations [2] using the LDA+DMFT method to incorporate strong correlations, predict an unusual state with 3 electrons localizing in the narrower d_xz/d_yz bands while the last electron remains itinerant in the broader d_xy-band. The observation of a strongly enhanced and temperature dependent spin susceptibility in the metallic state at x=0.5 is attributed to the S=1/2 local moments of the localized hole in the d_xz/d_yz-orbitals. The superexchange interaction between the local moments is strongly dependent on the specific orbital occupation and so glassy behavior in the orbital ordering can account for the glassy behavior observed in the susceptibility in the range 0.2 < x < 0.5. The final transition to a Mott insulator at x < 0.2 is driven by a compression of the RuO_4-octahedra and a switch to an electronic configuration with a filled d_xy-orbital and 2 electrons in the d_xz/d_yz orbitals which has a S=1 local moment expected for a Ru^4+-ion. [1] S. Nakatsuji and Y. Maeno, Phys. Rev. Lett. 84, 2666 (2000). [2] V.I. Anisimov, I.A. Nekrasov, D.E. Kondakov, T.M. Rice, and M. Sigrist, cond-mat0107095 and Eur. Phys. Jour. B (in press).

  3. Indium-Tin-Oxide Metal-Insulator-Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide

    NASA Astrophysics Data System (ADS)

    Yang, Gow-Huei; Hwang, Jun-Dar; Lan, Chih-Hsueh; Chan, Chien-Mao; Chen, Hone-Zem; Chang, Shoou-Jinn

    2007-08-01

    A low-cost and reliable SiO2 insulating layer was successfully deposited onto GaN by liquid-phase deposition (LPD) using supersaturated H2SiF6 and H3BO3 solutions. The interface-trap density, Dit, was estimated to be 1.2× 1012 cm-2 eV-1 for the as-grown, not annealed LPD-SiO2 layers. It was found that the leakage current density was 2.06× 10-5 A/cm2 at a negative bias of 10 V for the as-grown Al/20 nm LPD-SiO2/GaN metal-insulator-semiconductor (MIS) capacitors. It was also found that the LPD-SiO2 layer could be used to suppress the dark current of nitride-based photodetectors. A large photocurrent to dark-current contrast ratio higher than four orders of magnitude and a maximum responsivity of 0.65 A/W were observed from the fabricated indium-tin-oxide (ITO)/LPD-SiO2/GaN MIS UV photodetectors. These results could be explained by defect-assisted tunneling.

  4. Metal-Insulator Transitions.

    ERIC Educational Resources Information Center

    Mott, Nevill

    1978-01-01

    Explains how changes in temperature, pressure, magnetic field or alloy composition can affect the electronic band structure of substances, leading in some cases to dramatic changes in conductivity. (GA)

  5. First-principles study of Sr2Ir1-xRhxO4: charge transfer, spin-orbit coupling change, and the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Sim, Jae-Hoon; Kim, Heung-Sik; Han, Myung Joon

    2015-03-01

    Using first-principles density functional theory (DFT) calculations, we investigated the electronic structure of Rh-doped iridate, Sr2Ir1-xRhxO4 for which the doping (x) dependent metal-insulator transition (MIT) has been reported experimentally and the controversial discussion developed regarding the origin of this transition. Our DFT+U calculation shows that the value of < L . S > remains largely intact over the entire doping range considered here (x = 0 . 0 , 0 . 125 , 0 . 25 , 0 . 50 , 0 . 75 , and 1 . 0) in good agreement with the branching ratio measured by x-ray absorption spectroscopy. Also contrary to a previous picture to explain MIT based on the charge transfer between the transition-metal sites, our calculation clearly shows that those sites remain basically isoelectronic while the impurity bands of predominantly rhodium character are introduced near the Fermi level. As the doping increases, this impurity band overlaps with lower Hubbard band of iridium, leading to metal-insulator transition. The results will be discussed with comparison to the case of Ru doping. Computational resources were suported by The National Institute of Supercomputing and Networking/Korea Institute of Science and Technology Information with supercomputing resources including technical spport (Grant No. KSC-2013-C2-23).

  6. Metal--Insulator Transition in Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) Thin Films

    SciTech Connect

    Pop, Aurel V.

    2009-05-22

    We have studied the influence of disorder induced by oxygen on the normal state resistivity of under doped Bi{sub 2}Sr{sub 2}Cu{sub 1}O{sub 6+d}(Bi-2201) thin films, deposited in situ onto heated SrTiO{sub 3}(100) substrates by using DC magnetron sputtering for an off-stoichiometric target. The compositions and structural characterization for the deposited films were carried by (EDX), (XPS) and X-ray diffraction measurements. The effect of partial oxygen pressure in the sputtering gas on the metal-insulator transition are presented.

  7. Size-dependent metal-insulator transition in platinum-dispersed silicon dioxide thin film: A candidate for future non-volatile memory

    NASA Astrophysics Data System (ADS)

    Chen, Albert B. K.

    Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, the goal of this study is to use a model material to delineate the intrinsic features of the electronic metal/insulator transition in random systems and to demonstrate their relevance to reliable memory storage and retrieval. We fabricated amorphous SiO2 thin films embedded with randomly dispersed Pt atoms. Macroscopically, this random material exhibits a percolation transition in electric conductivity similar to the one found in various insulator/metal granular materials. However, at Pt concentrations well below the bulk percolation limit, a distinct insulator to metal transition occurs in the thickness direction as the film thickness falls below electron's "diffusion" distance, which is the tunneling distance at 0K. The thickness-triggered metal- to-insulator transition (MIT) can be similarly triggered by other conditions: (a) a changing Pt concentration (a concentration-triggered MIT), (b) a changing voltage/polarity (voltage-triggered MIT), and (c) an UV irradiation (photon-triggered MIT). The resistance switching characteristics of this random material were further investigated in several device configurations under various test conditions. These include: materials for the top and bottom electrodes, fast pulsing, impedance spectroscopy, static stressing, retention, fatigue and temperature from 10K to 448K. The SiO2-Pt

  8. Metal-insulator transition in Nd{sub 1−x}Eu{sub x}NiO{sub 3}: Entropy change and electronic delocalization

    SciTech Connect

    Jardim, R. F. Andrade, S.; Barbeta, V. B.; Escote, M. T.; Cordero, F.; Torikachvili, M. S.

    2015-05-07

    The metal-insulator (MI) phase transition in Nd{sub 1–x}Eu{sub x}NiO{sub 3}, 0 ≤ x ≤ 0.35, has been investigated through the pressure dependence of the electrical resistivity ρ(P, T) and measurements of specific heat C{sub P}(T). The MI transition temperature (T{sub MI}) increases with increasing Eu substitution and decreases with increasing pressure. Two distinct regions for the Eu dependence of dT{sub MI}/dP were found: (i) for x ≤ 0.15, dT{sub MI}/dP is nearly constant and ∼−4.3 K/kbar; (ii) for x ≥ 0.15, dT{sub MI}/dP increases with x and it seems to reach a saturation value ∼−6.2 K/kbar for the x = 0.35 sample. This change is accompanied with a strong decrease in the thermal hysteresis in ρ(P, T) between the cooling and warming cycles, observed in the vicinity of T{sub MI}. The entropy change (ΔS) at T{sub MI} for the sample x = 0, estimated by using the dT{sub MI}/dP data and the Clausius-Clapeyron equation, resulted in ΔS ∼ 1.2 J/mol K, a value in line with specific heat measurements. When the Eu concentration is increased, the antiferromagnetic (AF) and the MI transitions are separated in temperature, permitting that an estimate of the entropy change due to the AF/Paramagnetic transition be carried out, yielding ΔS{sub M} ∼ 200 mJ/mol K. This value is much smaller than that expected for a s = 1/2 spin system. The analysis of ρ(P, T) and C{sub P}(T) data indicates that the entropy change at T{sub MI} is mainly due to the electronic delocalization and not related to the AF transition.

  9. The metal-insulator transition in vanadium dioxide: A view at bulk and surface contributions for thin films and the effect of annealing

    SciTech Connect

    Yin, W.; West, K. G.; Lu, J. W.; Pei, Y.; Wolf, S. A.; Reinke, P.; Sun, Y.

    2009-06-01

    Vanadium dioxide is investigated as potential oxide barrier in spin switches, and in order to incorporate VO{sub 2} layers in complex multilayer devices, it is necessary to understand the relation between bulk and surface/interface properties. Highly oriented VO{sub 2} thin films were grown on (0001) sapphire single crystal substrates with reactive bias target ion beam deposition. In the analysis of the VO{sub 2} films, bulk-sensitive methods [x-ray diffraction (XRD) and transport measurements] and surface sensitive techniques [photoelectron spectroscopy (PES) and scanning tunneling microscopy and spectroscopy] were employed. The samples were subjected to heating cycles with annealing temperatures of up to 425 and 525 K. Prior to annealing the VO{sub 2} films exhibit the transition from the monoclinic to the tetragonal phase with the concurrent change in conductivity by more than a factor of 10{sup 3} and their phase purity is confirmed by XRD. Annealing to 425 K and thus cycling across the metal-insulator transition (MIT) temperature has no impact on the bulk properties of the VO{sub 2} film but the surface undergoes irreversible electronic changes. The observation of the valence band with PES during the annealing illustrates that the surface adopts a partially metallic character, which is retained after cooling. Annealing to a higher temperature (525 K) triggers a modification of the bulk, which is evidenced by a considerable reduction in the MIT characteristics, and a degradation in crystallite morphology. The local measurement of the conductivity with scanning tunneling spectroscopy shows the transition of the surface from predominantly semiconducting surface prior to annealing to a surface with an overwhelming contribution from metallic sections afterward. The spatial distribution of metallic regions cannot be linked in a unique manner to the crystallite size or location within the crystallites. The onset of oxygen depletion at the surface is held responsible

  10. Magnetic, electrical, and structural studies on the metal-insulator transition in CuIr2S4-xSex (0⩽x⩽4)

    NASA Astrophysics Data System (ADS)

    Somasundaram, P.; Kim, D.; Honig, J. M.; Pekarek, T. M.; Gu, T.; Goldman, A. I.

    1998-06-01

    Magnetic transitions and structural transformations have been investigated in CuIr2S4-xSex (0⩽x⩽4). It is found from magnetic, resistivity, and thermopower studies that the transition temperature decreases as the Se concentration is increased. The change in magnetization occurs over a 10-15 K range at lower Se concentration, while it broadens to 30 K for an Se concentration of x=0.5. Low-temperature studies proved that beyond the composition corresponding to x=0.5 the cubic structure is stabilized. The metal-insulator transition beyond the x=0.5 composition arises from the electronic rather than from the lattice contribution.

  11. Local structural distortion and electronic modifications in PrNiO3 across the metal-insulator transition

    SciTech Connect

    Piamonteze, C.; Tolentino, H.C.N.; Ramos, A.Y.; Massa, N. E.; Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.

    2003-01-24

    Local electronic and structural properties of PrNiO3 perovskite were studied by means of X-ray Absorption Spectroscopy at Ni K and L edges. The EXAFS results at Ni K edge show a structural transition from three different Ni-O bond-lengths at the insulating phase to two Ni-O bond-lengths above TMI. These results were interpreted as being due to a transition from a structure with two different Ni sites at the insulating phase to one distorted Ni site at the metallic phase. The Ni L edge spectra show a remarkable difference between the spectra measured at the insulating and metallic phases that indicates a decreasing degree of hybridization between Ni3d and O2p bands from the metallic to the insulating phase.

  12. Detailed mapping of the local Ir4+ dimers through the metal-insulator transitions of CuIr2S4 thiospinel by X-ray atomic pair distribution function measurements.

    PubMed

    Božin, E S; Masadeh, A S; Hor, Y S; Mitchell, J F; Billinge, S J L

    2011-01-28

    The evolution of the short-range structural signature of the Ir4+ dimer state in CuIr2S4 thiospinel has been studied across the metal-insulator phase transitions as the metallic state is induced by temperature, Cr doping, and x-ray fluence. An atomic pair distribution function (PDF) approach reveals that there are no local dimers that survive into the metallic phase when this is invoked by temperature and doping. The PDF shows Ir4+ dimers when they exist, regardless of whether or not they are long-range ordered. At 100 K, exposure to a 98 keV x-ray beam melts the long-range dimer order within a few seconds, though the local dimers remain intact. This shows that the metallic state accessed on warming and doping is qualitatively different from the state obtained under x-ray irradiation. PMID:21405330

  13. Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2015-07-01

    Insulator-to-metal (MI) phase transition in vanadium dioxide (V O2) thin films with controlled lattice distortion was investigated by thermopower measurements. V O2 epitaxial films with different crystallographic orientations, grown on (0001 ) α -A l2O3 , (11 2 ¯0 ) α -A l2O3 , and (001 ) Ti O2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S ) from ˜200 to 23 μ V K-1 , along with a sharp drop in electrical resistivity (ρ ) , due to the transition from an insulator to a metal. The MI transition temperatures observed both in ρ (Tρ) and S (TS) for the V O2 films systematically decrease with lattice shrinkage in the pseudorutile structure along the c axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than the onset Tρ. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in ρ measurements. Consequently, S measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in V O2 .

  14. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    NASA Astrophysics Data System (ADS)

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-11-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system.

  15. Electron lone pair distortion facilitated metal-insulator transition in β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires

    SciTech Connect

    Wangoh, L.; Quackenbush, N. F.; Marley, P. M.; Banerjee, S.; Sallis, S.; Fischer, D. A.; Woicik, J. C.; Piper, L. F. J.

    2014-05-05

    The electronic structure of β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires has been studied with x-ray photoelectron spectroscopy techniques. The recent synthesis of defect-free β-Pb{sub 0.33}V{sub 2}O{sub 5} nanowires resulted in the discovery of an abrupt voltage-induced metal insulator transition. First principle calculations predicted an additional V-O-Pb hybridized “in-gap” state unique to this vanadium bronze playing a significant role in facilitating the transition. We confirm the existence, energetic position, and orbital character of the “in-gap” state. Moreover, we reveal that this state is a hybridized Pb 6s–O 2p antibonding lone pair state resulting from the asymmetric coordination of the Pb{sup 2+} ions.

  16. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

    PubMed Central

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Soon Tok, Eng; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  17. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

    PubMed

    Ke, Chang; Zhu, Weiguang; Zhang, Zheng; Tok, Eng Soon; Ling, Bo; Pan, Jisheng

    2015-01-01

    A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO2:Sb system. PMID:26616286

  18. Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition

    SciTech Connect

    Okimura, Kunio; Mian, Md.Suruz

    2012-09-15

    The authors achieved oriented growth of vanadium dioxide (VO{sub 2}) films on CoCrTa metal template grown on an Si substrate. Low-temperature ({approx}250 Degree-Sign C) deposition of VO{sub 2} films using inductively coupled-plasma-assisted sputtering technique realized an abrupt interface between VO{sub 2} and CoCrTa layers, suppressing the oxidation and diffusion of metal components. The films revealed a metal-insulator transition with resistance change of over 2 orders of magnitude. The CoCrTa film, in which Co hexagonal crystalline grains with c-axis orientation were surrounded by segregated Cr and Ta, serves for the oriented growth of VO{sub 2} crystalline film, enabling higher orders of transition in resistance and low voltage switching, even for the vertical (out-of-plane) direction.

  19. DC current induced metal-insulator transition in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3}/LaAlO{sub 3} thin film

    SciTech Connect

    Huang, Haoliang; Luo, Zhenlin Yang, Yuanjun; Yang, Mengmeng; Wang, Haibo; Hu, Sixia; Bao, Jun; Yun, Yu; Meng, Dechao; Lu, Yalin; Gao, Chen

    2014-05-15

    The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm{sub 0.6}Nd{sub 0.4}NiO{sub 3} (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO{sub 3} substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The T{sub MI} of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 10{sup 9} A•m{sup −2} to 4.9 × 10{sup 9} A•m{sup −2}. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

  20. Testing the universality of the many-body metal-insulator transition by time evolution of a disordered one-dimensional ultracold fermionic gas

    NASA Astrophysics Data System (ADS)

    Tezuka, Masaki; García-García, Antonio M.

    2012-03-01

    It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional Fermi gas with short-range interactions in a quasiperiodic potential by the time-dependent density-matrix renormalization group technique. By tuning disorder and interactions we study the MIT from the weakly to the strongly interacting limit. The MIT is not universal as time evolution, well described by a process of anomalous diffusion, depends qualitatively on the interaction strength. By using scaling ideas we relate the parameter that controls the diffusion process with the critical exponent that describes the divergence of the localization length. In the limit of strong interactions theoretical arguments suggest that the motion at the MIT tends to ballistic and critical exponents approach mean-field predictions.

  1. Improved metal-insulator-transition characteristics of ultrathin VO{sub 2} epitaxial films by optimized surface preparation of rutile TiO{sub 2} substrates

    SciTech Connect

    Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

    2014-02-24

    Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO{sub 2} (001), only ∼2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ∼500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO{sub 2}(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700–750  °C in flowing oxygen. This pretreatment removes surface contaminants, TiO{sub 2} defects, and provides a terraced, atomically smooth surface.

  2. Disorder Driven Metal-Insulator Transition in BaPb1-xBixO3 and Inference of Disorder-Free Critical Temperature

    NASA Astrophysics Data System (ADS)

    Luna, Katherine; Giraldo-Gallo, Paula; Geballe, Theodore; Fisher, Ian; Beasley, Malcolm

    2014-10-01

    We performed point-contact spectroscopy tunneling measurements on single crystal BaPb1-xBixO3 for 0≤x ≤0.28 at temperatures T =2-40 K and find a suppression in the density of states at low bias voltages that is characteristic of disordered metals. Both the correlation gap and the zero-temperature conductivity are zero at a critical concentration xc=0.30. Not only does this suggests that a disorder driven metal-insulator transition occurs before the onset of the charge disproportionated charge density wave insulator, but we also explore whether a scaling theory is applicable. In addition, we estimate the disorder-free critical temperature and compare these results to Ba1-xKxBiO3.

  3. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

    PubMed

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  4. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    NASA Astrophysics Data System (ADS)

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-06-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

  5. Sr{sub 2}CrOsO{sub 6}: End point of a spin-polarized metal-insulator transition by 5d band filling

    SciTech Connect

    Krockenberger, Y.; Mogare, K.; Jansen, M.; Reehuis, M.; Tovar, M.; Vaitheeswaran, G.; Kanchana, V.; Bultmark, F.; Delin, A.; Wilhelm, F.; Rogalev, A.; Winkler, A.; Alff, L.

    2007-01-01

    In the search for new spintronic materials with high spin polarization at room temperature, we have synthesized an osmium-based double perovskite with a Curie temperature of 725 K. Our combined experimental results confirm the existence of a sizable induced magnetic moment at the Os site, supported by band-structure calculations, in agreement with a proposed kinetic-energy-driven mechanism of ferrimagnetism in these compounds. The intriguing property of Sr{sub 2}CrOsO{sub 6} is that it is at the end point of a metal-insulator transition due to 5d band filling and at the same time ferrimagnetism and high-spin polarization are preserved.

  6. Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

    PubMed Central

    Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

    2015-01-01

    Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

  7. Directing Colloidal Assembly and a Metal-Insulator Transition Using a Quench-Disordered Porous Rod Template

    NASA Astrophysics Data System (ADS)

    Jadrich, Ryan B.; Schweizer, Kenneth S.

    2014-11-01

    Replica and effective-medium theory methods are employed to elucidate how to massively reconfigure a colloidal assembly to achieve globally homogeneous, strongly clustered, and percolated equilibrium states of high electrical conductivity at low physical volume fractions. A key idea is to employ a quench-disordered, large-mesh rigid-rod network as a templating internal field. By exploiting bulk phase separation frustration and the tunable competing processes of colloid adsorption on the low-dimensional network and fluctuation-driven colloid clustering in the pore spaces, two distinct spatial organizations of greatly enhanced particle contacts can be achieved. As a result, a continuous, but very abrupt, transition from an insulating to metallic-like state can be realized via a small change of either the colloid-template or colloid-colloid attraction strength. The approach is generalizable to more complicated template or colloidal architectures.

  8. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.

  9. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    PubMed Central

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-01-01

    Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent. PMID:27033955

  10. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br

    NASA Astrophysics Data System (ADS)

    Brandenburg, Jens; Müller, Jens; Schlueter, John A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt κ-(D8-BEDT-TTF)2Cu[N(CN)2]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  11. Sudden slowing down of charge carrier dynamics at the Mott metal-insulator transition in kappa-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br.

    SciTech Connect

    Brandenburg, J.; Muller, J.; Schlueter, J. A.

    2012-02-01

    We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-insulator (MI) transition in the quasi-two-dimensional organic charge-transfer salt {kappa}-(D{sub 8}-BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br by means of fluctuation (noise) spectroscopy. The observed 1/f-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponential kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies in the vicinity of the Mott critical endpoint. This sudden slowing down of the electron dynamics, observed here in a pure Mott system, may be a universal feature of MI transitions. Our findings are compatible with an electronic phase separation in the critical region of the phase diagram and offer an explanation for the not yet understood absence of effective mass enhancement when crossing the Mott transition.

  12. Phonon mode spectroscopy, electron-phonon coupling, and the metal-insulator transition in quasi-one-dimensional M2Mo6Se6

    NASA Astrophysics Data System (ADS)

    Petrović, A. P.; Lortz, R.; Santi, G.; Decroux, M.; Monnard, H.; Fischer, Ø.; Boeri, L.; Andersen, O. K.; Kortus, J.; Salloum, D.; Gougeon, P.; Potel, M.

    2010-12-01

    We present electronic-structure calculations, electrical resistivity data, and the first specific-heat measurements in the normal and superconducting states of quasi-one-dimensional M2Mo6Se6 (M=Tl,In,Rb) . Rb2Mo6Se6 undergoes a metal-insulator transition at ˜170K : electronic-structure calculations indicate that this is likely to be driven by the formation of a dynamical charge-density wave. However, Tl2Mo6Se6 and In2Mo6Se6 remain metallic down to low temperature, with superconducting transitions at Tc=4.2K and 2.85 K, respectively. The absence of any metal-insulator transition in these materials is due to a larger in-plane bandwidth, leading to increased interchain hopping which suppresses the density wave instability. Electronic heat-capacity data for the superconducting compounds reveal an exceptionally low density of states DEF=0.055 states eV-1atom-1 , with BCS fits showing 2Δ/kBTc≥5 for Tl2Mo6Se6 and 3.5 for In2Mo6Se6 . Modeling the lattice specific heat with a set of Einstein modes, we obtain the approximate phonon density of states F(ω) . Deconvolving the resistivity for the two superconductors then yields their electron-phonon transport coupling function αtr2F(ω) . In Tl2Mo6Se6 and In2Mo6Se6 , F(ω) is dominated by an optical “guest ion” mode at ˜5meV and a set of acoustic modes from ˜10 to 30 meV. Rb2Mo6Se6 exhibits a similar spectrum; however, the optical phonon has a lower intensity and is shifted to ˜8meV . Electrons in Tl2Mo6Se6 couple strongly to both sets of modes, whereas In2Mo6Se6 only displays significant coupling in the 10-18 meV range. Although pairing is clearly not mediated by the guest ion phonon, we believe it has a beneficial effect on superconductivity in Tl2Mo6Se6 , given its extraordinarily large coupling strength and higher Tc compared to In2Mo6Se6 .

  13. Hopping conduction in p-type MoS{sub 2} near the critical regime of the metal-insulator transition

    SciTech Connect

    Park, Tae-Eon; Jang, Chaun E-mail: presto@kist.re.kr; Suh, Joonki; Wu, Junqiao; Seo, Dongjea; Park, Joonsuk; Lin, Der-Yuh; Huang, Ying-Sheng; Choi, Heon-Jin; Chang, Joonyeon E-mail: presto@kist.re.kr

    2015-11-30

    We report on temperature-dependent charge and magneto transport of chemically doped MoS{sub 2}, p-type molybdenum disulfide degenerately doped with niobium (MoS{sub 2}:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T{sup −0.25}, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS{sub 2}:Nb on the insulating side of the M-I transition.

  14. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  15. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  16. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  17. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

    PubMed Central

    Lee, Hong Sub; Choi, Sun Gyu; Park, Hyung-Ho; Rozenberg, M. J.

    2013-01-01

    Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr0.7Ca0.3MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics.

  18. Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

    DOE PAGESBeta

    Zhang, Jack Y.; Kim, Honggyu; Mikheev, Evgeny; Hauser, Adam J.; Stemmer, Susanne

    2016-04-01

    Here, bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Usingmore » space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.« less

  19. Polarity and the Metal-Insulator Transition in ultrathin LaNiO3 on SrTiO3

    NASA Astrophysics Data System (ADS)

    Freeland, J. W.; Tung, I. C.; Luo, G.; Zhou, H.; Lee, J. H.; Chang, S. H.; Morgan, D.; Bedzyk, M. J.; Fong, D. D.

    Dimensionality and strain control of nickelates has been shown as a route for control of interesting electronic and magnetic phases. However, little is know about the evolution of atomic structure in these layered architectures and the interplay with these states. Here we present, a detailed study of lattice structures measured real time during the layer-by-layer growth of LaNiO3 on SrTiO3. Using hard X-rays coupled with oxide MBE, we have tracked the lattice structure evolution as a function of depth across the regime where transport shows a clear metal to insulator transition. At the same time X-ray absorption shows the films are closer to LaNiO2.5 when thin and evolve to LaNiO3 by 10 unit cells thickness. Analysis of the structure during growth displays a very complex evolution throughout the film of the lattice parameter and displacement of the B-site from the unit cell center, which theory connects with pathways of compensating the polar mismatch at the surface and interface. Work at the APS, Argonne is supported by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  20. Metal-Insulator Transition of the New One-Dimensional Organic Conductors with Complete Uniform Stacks: (DMEDO-TTF)2X (X = ClO4 and BF4)

    NASA Astrophysics Data System (ADS)

    Kumeta, Shohei; Kawamoto, Tadashi; Shirahata, Takashi; Misaki, Yohji; Mori, Takehiko

    2016-09-01

    The structural, transport, and magnetic properties of the new organic conductors (DMEDO-TTF)2X (X = ClO4 and BF4), where DMEDO-TTF is dimethyl(ethylenedioxy)tetrathiafulvalene, have been investigated. These compounds have a complete uniform stack structure, indicating that a quasi-one-dimensional 3/4-filled band without a dimerization gap is realized. The ClO4 and BF4 salts show a first-order metal-insulator (MI) transition at approximately 190 and 210 K, respectively, in the cooling process. The ground state is a nonmagnetic insulator on the basis of magnetic susceptibility measurements. Low-temperature X-ray diffraction measurements show that the MI transition originates in the anion ordering transition with a superstructure wave vector of q = (0,1/2,0) corresponding to the stacking direction; the uniform donor stacking structure changes to the tetramerized structure with a large shift of the donors. The shift of the anion toward the central two donors in a tetramer indicates that the insulating phase is a charge-density-wave state.

  1. Tunable metal-insulator transition in Nd{sub 1−x}Y{sub x}NiO{sub 3} (x = 0.3, 0.4) perovskites thin film at near room temperature

    SciTech Connect

    Shao, Tao; Qi, Zeming Wang, Yuyin; Li, Yuanyuan; Yang, Mei; Zhang, Guobin; Wang, Yu; Liu, Miao

    2015-07-13

    Metal-insulator transition (MIT) occurs due to the charge disproportionation and lattice distortions in rare-earth nickelates. Existing studies revealed that the MIT behavior of rare-earth nickelates is fairly sensitive to external stress/pressure, suggesting a viable route for MIT strain engineering. Unlike applying extrinsic strain, the MIT can also be modulated by through rare-earth cation mixing, which can be viewed as intrinsic quantum stress. We choose Nd{sub 1−X}Y{sub X}NiO{sub 3} (x = 0.3, 0.4) perovskites thin films as a prototype system to exhibit the tunable sharp MIT at near room temperature. By adjusting Y concentration, the transition temperature of the thin films can be changed within the range of 340–360 K. X-ray diffraction, X-ray absorption fine structure (XAFS), and in situ infrared spectroscopy are employed to probe the structural and optical property variation affected by composition and temperature. The infrared transmission intensity decreases with temperature across the MIT, indicating a pronounced thermochromic effect. Meanwhile, the XAFS result exhibits that the crystal atomistic structure changes accompanying with the Y atoms incorporation and MIT phase transition. The heavily doped Y atoms result in the pre-edge peak descent and Ni-O bond elongation, suggesting an enhanced charge disproportionation effect and the weakening of hybridization between Ni-3d and O-2p orbits.

  2. Correlation-induced metal-insulator transitions in d0 magnetic superlattices based on alkaline-earth monoxides: Insights from ab initio calculations

    NASA Astrophysics Data System (ADS)

    Lu, Yi-Lin; Dong, Shengjie; Zhou, Baozeng; Zhao, Hui; Wu, Ping

    2015-06-01

    Using first-principles density functional theory calculations, we have investigated the electronic structure and magnetic properties of four superlattices (MO)1/(MX)1 (001) (M=Ca and Sr; X=N and C). Our results show that compared with standard GGA approach, the GGA plus effective Ueff scheme can correct electronic structure and magnetic properties in some extent. With enhancing electronic correlation, for (CaO)1/(CaN)1, (SrO)1/(SrN)1, and (SrO)1/(SrC)1, the bands across Fermi level are divided into two parts and the shape of isotropic spherical spin atmosphere becomes anisotropic dumbbell-like with specific orientation, accompanying metal-insulator transitions. For (CaO)1/(CaC)1, the states just smearing with the Fermi level shift to lower energy region below Fermi level, indicating the transformation from a nearly half metal to an actual half metal occurs. The different behavior of (CaO)1/(CaC)1 compared with three other compounds may be caused by the larger ionization energy of calcium than that of strontium and the smaller electronegativity of carbon than that of nitrogen.

  3. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  4. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  5. Strain-induced metal-insulator transition in t2 g electron system of perovskite titanate S m0.5C a0.5Ti O3 films

    NASA Astrophysics Data System (ADS)

    Yoshimatsu, K.; Okabe, H.; Oshima, T.; Ueda, S.; Ohtomo, A.

    2016-05-01

    We have demonstrated a strain-induced metal-insulator transition for weak Jahn-Teller effects in a t2 g electron system of S m0.5C a0.5Ti O3 , which has metallic ground states in the bulk. A clear variation of electronic properties in S m0.5C a0.5Ti O3 thin films was investigated as a function of epitaxial stain by changing a substrate and the film thickness. Under strong biaxial tensile strain, metallic behaviors were completely eliminated, as evidenced by the temperature dependence of resistivity. The observed metal-insulator transition was consistent with the behavior of the Ti 3 d density of states at the Fermi level seen in valence band hard x-ray photoemission spectra.

  6. Metal-insulator transition in AC{sub 60}:RbC{sub 60} and KC{sub 60}

    SciTech Connect

    Khazeni, K.; Crespi, V.H.; Hone, J.; Zettl, A.; Cohen, M.L. |

    1997-09-01

    At zero pressure polymerized RbC{sub 60} is an insulator, whereas polymerized KC{sub 60} is a metal with a slight low-temperature resistive upturn. We report measurements of the resistivity of RbC{sub 60} under pressure, finding a hysteretic resistive transition in RbC{sub 60} near 200 K at 5 kbar, at which point the material transforms from insulator to metal. Correcting the resistivity to constant volume, both materials are metallic below the transition with a common low-temperature resistive upturn which is suppressed under compression. {copyright} {ital 1997} {ital The American Physical Society}

  7. Continuous metal-insulator transition at 410 K of the antiferromagnetic perovskite NaOsO3

    NASA Astrophysics Data System (ADS)

    Yamaura, K.; Shi, Y. G.; Guo, Y. F.; Yu, S.; Arai, M.; Belik, A. A.; Sato, A.; Takayama-Muromachi, E.; Tian, H. F.; Yang, H. X.; Li, J. Q.; Varga, T.; Mitchell, J. F.; Okamoto, S.

    2010-03-01

    Newly synthesized perovskite NaOsO3 shows a Curie-Weiss metallic nature at high temperature and suddenly goes into an antiferromagnetically insulating state at 410 K on cooling. Electronic specific heat at the low temperature limit is absent, indicating that the band gap fully opens. In situ observation in electron microscopy undetected any lattice anomalies in the vicinity of the transition temperature. It is most likely that the antiferromagnetic correlation plays an essential role in the gap opening. Use of the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. This research was supported in part by the WPI Initiative on Materials Nanoarchitectonics from MEXT, Japan, and the Grants-in-Aid for Scientific Research (20360012) from JSPS.

  8. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  9. Controlling the sharpness of metal-insulator transition in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (0 ≤ x ≤ 0.35) films

    NASA Astrophysics Data System (ADS)

    Chen, Pingfan; Huang, Zhen; Tan, Xuelian; Chen, Binbin; Zhi, Bowen; Gao, Guanyin; Chen, Feng; Wu, Wenbin

    2014-10-01

    We report that epitaxial strain and chemical doping can be used cooperatively to tune the sharpness of metal-insulator transition (MIT) in epitaxial (La1-xPrx)0.67Ca0.33MnO3 (LPCMO) films. Compared to multiple MITs in anisotropically strained LPCMO/(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001)C (LSAT) films with a phase-separated ground state, the lattice-matched LPCMO/NdGaO3(110)Or (NGO) films show a sharp MIT near the Curie temperature (TC), with a ferromagnetic-metallic ground state. The sharpness of MIT, as evaluated by the temperature coefficient of resistance (TCR), can be two times larger in LPCMO/NGO films than in LPCMO/LSAT films. Moreover, for LPCMO/NGO films, TCR greatly relies on the Pr doping level x, where a maximum TCR value of 88.17% K-1 can be obtained at x = 0.25, but shows less dependence on the film thicknesses. These results suggest that the combination of epitaxial strain and chemical doping could be employed to control not only the ground state of the manganite films, but the sharpness of MIT at various TC, providing the feasibility to design manganite-based infrared devices in a broad temperature range.

  10. Electronic Griffiths phase of the d = 2 Mott transition.

    PubMed

    Andrade, E C; Miranda, E; Dobrosavljević, V

    2009-05-22

    We investigate the effects of disorder within the T = 0 Brinkman-Rice scenario for the Mott metal-insulator transition in two dimensions. For sufficiently weak disorder the transition retains the Mott character, as signaled by the vanishing of the local quasiparticle weights Z_{i} and strong screening of the renormalized site energies at criticality. In contrast to the behavior in high dimensions, here the local spatial fluctuations of quasiparticle parameters are strongly enhanced in the critical regime, with a distribution function P(Z) approximately Z;{alpha-1} and alpha --> 0 at the transition. This behavior indicates a robust emergence of an electronic Griffiths phase preceding the metal-insulator transition, in a fashion surprisingly reminiscent of the "infinite randomness fixed point" scenario for disordered quantum magnets. PMID:19519046

  11. A synergic effect of sodium on the phase transition of tungsten-doped vanadium dioxide.

    PubMed

    Song, Qiang; Gong, Weitao; Ning, Guiling; Mehdi, Hassan; Zhang, Guiqi; Ye, Junwei; Lin, Yuan

    2014-05-21

    A synergic effect of sodium on the metal-insulator transition temperature reduction of tungsten-doped vanadium dioxide is noted. With the assistance of sodium, doping with tungsten yields an extra depression in phase temperature of 6-12 °C over that of 20-26 °C per at% of tungsten. PMID:24691489

  12. Phases and Phase Transitions

    NASA Astrophysics Data System (ADS)

    Gitterman, Moshe

    2014-09-01

    In discussing phase transitions, the first thing that we have to do is to define a phase. This is a concept from thermodynamics and statistical mechanics, where a phase is defined as a homogeneous system. As a simple example, let us consider instant coffee. This consists of coffee powder dissolved in water, and after stirring it we have a homogeneous mixture, i.e., a single phase. If we add to a cup of coffee a spoonful of sugar and stir it well, we still have a single phase -- sweet coffee. However, if we add ten spoonfuls of sugar, then the contents of the cup will no longer be homogeneous, but rather a mixture of two homogeneous systems or phases, sweet liquid coffee on top and coffee-flavored wet sugar at the bottom...

  13. Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1 -xSbxTe2 studied by angle-resolved photoemission

    NASA Astrophysics Data System (ADS)

    Trang, Chi Xuan; Wang, Zhiwei; Yamada, Keiko; Souma, Seigo; Sato, Takafumi; Takahashi, Takashi; Segawa, Kouji; Ando, Yoichi

    2016-04-01

    We report a systematic angle-resolved photoemission spectroscopy on topological insulator (TI) TlBi1 -xSbxTe2 which is bulk insulating at 0.5 ≲x ≲0.9 and undergoes a metal-insulator-metal transition with the Sb content x . We found that this transition is characterized by a systematic hole doping with increasing x , which results in the Fermi-level crossings of the bulk conduction and valence bands at x ˜0 and x ˜1 , respectively. The Dirac point of the topological surface state is gradually isolated from the valence-band edge, accompanied by a sign reversal of Dirac carriers. We also found that the Dirac velocity is the largest among known solid-solution TI systems. The TlBi1 -xSbxTe2 system thus provides an excellent platform for Dirac-cone engineering and device applications of TIs.

  14. Quantum Magnetic Oscillations of the Surface Tension at a Metal-Insulator Interface

    NASA Astrophysics Data System (ADS)

    Dubovskii, L. B.

    2016-03-01

    Any metal-insulator transition (MI transition) in a crystalline material must be a transition from a situation in which electronic bands overlap to a situation when they do not (Mott, Metal-insulator, 2nd edn. Taylor@Francis, London, 1990). For this case the self-consistent equations for the two-band conductor are formulated (cf. Dubovskii, JETP Lett. 99(1):22-26, 2014). The description of the MI phase transition is based on two order parameters. The first one is the material density distribution at the MI boundary ρ ({vec {r}}). The second one is a four-component complex vector in spin space Upsilon ({vec {r}}). The value Upsilon ({vec {r}}) determines the electron density in the metallic or semimetallic phase in the presence of an external magnetic field. Two different components of the vector describe possible spin states of electrons and holes inserted in the external magnetic field. The solution gives a singular behavior of the surface tension at the MI interface in the vicinity of the MI phase transition. At low temperature quantum oscillations of the surface tension in the magnetic field take place.

  15. Holographic entanglement entropy close to quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Ling, Yi; Liu, Peng; Niu, Chao; Wu, Jian-Pin; Xian, Zhuo-Yu

    2016-04-01

    We investigate the holographic entanglement entropy (HEE) of a strip geometry in four dimensional Q-lattice backgrounds, which exhibit metal-insulator transitions in the dual field theory. Remarkably, we find that the HEE always displays a peak in the vicinity of the quantum critical points. Our model provides the first direct evidence that the HEE can be used to characterize the quantum phase transition (QPT). We also conjecture that the maximization behavior of HEE at quantum critical points would be universal in general holographic models.

  16. Valence and origin of metal-insulator transition in Mn doped SrRuO 3 studied by electrical transport, X-ray photoelectron spectroscopy and LSDA+ U calculation

    NASA Astrophysics Data System (ADS)

    Sahu, Ranjan K.; Pandey, Sudhir K.; Pathak, L. C.

    2011-03-01

    We have studied the valence and electronic properties of Mn doped SrRuO 3 using electrical transport measurement, X-ray photoelectron spectroscopy (XPS) and local (spin) density approximation plus Coulomb interaction strength calculation (LSDA+ U). The resistivity data revealed that the system undergoes transition from metal to insulator at the critical Mn doping level, x˜0.2, which is accompanied by the structural transition from orthorhombic to tetragonal crystal symmetry. Besides, the significant reduction of the spectral weight at the coherent zone (0.8 eV) of the valence band is observed for x>0.2. The core XPS spectra suggest that both the transition elements exist in the mixed ionic pair, Ru +4/Ru +5↔Mn +3/Mn +4. The detail analysis of the results suggests that the Coulomb correlation effect in conjugation with localization of the charge carriers predominate over the mixed ionic pair effect and responsible for the metal-insulator transition in the series.

  17. Depressed Phase Transition in Solution-Grown VO2 Nanostructures

    SciTech Connect

    Whittaker, L.; Jaye, C; Fu, Z; Fischer, D; Banerjee, S

    2009-01-01

    The first-order metal-insulator phase transition in VO{sub 2} is characterized by an ultrafast several-orders-of-magnitude change in electrical conductivity and optical transmittance, which makes this material an attractive candidate for the fabrication of optical limiting elements, thermochromic coatings, and Mott field-effect transistors. Here, we demonstrate that the phase-transition temperature and hysteresis can be tuned by scaling VO{sub 2} to nanoscale dimensions. A simple hydrothermal protocol yields anisotropic free-standing single-crystalline VO{sub 2} nanostructures with a phase-transition temperature depressed to as low as 32 C from 67 C in the bulk. The observations here point to the importance of carefully controlling the stochiometry and dimensions of VO{sub 2} nanostructures to tune the phase transition in this system.

  18. Finite-size driven topological and metal-insulator transition in (Bi1-xInx)2 Se3thin films

    NASA Astrophysics Data System (ADS)

    Salehi, Maryam; Shapourian, Hassan; Koirala, Nikesh; Brahlek, Matthew; Moon, Jisoo; Oh, Seongshik

    In a topological insulator (TI), if one of its heavy elements is replaced by a light one, the spin-orbit coupling (SOC) strength decreases and eventually the TI transforms into a normal insulator beyond a critical level of substitution.This is the standard description of the topological phase transition (TPT). However, this notion of TPT, driven solely by the SOC (or something equivalent), is not complete for finite size samples considering that the thickness of the topological surface states diverges at the critical point. Here, on specially-engineered (BixIn1-x)2 Se3 thin films, using systematic transport measurments we show that not only the SOC but also the finite sample size can induce TPT. This study sheds light on the role of spatial confinement as an extra tuning parameter controlling the topological critical point.

  19. Metal-insulator transition in antiferromagnetic Ba1−xKxMn2As2 (0≤x≤0.4) single crystals studied by 55Mn and 75As NMR

    SciTech Connect

    Yeninas, Steven; Pandey, Abhishek; Ogloblichev, V.; Mikhalev, K.; Johnston, David C.; Furukawa, Yuji

    2013-12-23

    The magnetic structure and metal-insulator transition in antiferromagnetic (AFM) BaMn2As2 and Ba1−xKxMn2As2 single crystals have been investigated by 55Mn and 75As nuclear magnetic resonance (NMR) measurements. In the parent AFM insulator BaMn2As2 with a Néel temperature TN=625 K, we observed a 55Mn zero-field NMR (ZFNMR) spectrum and confirmed the G-type AFM structure from the field dependence of the 55Mn spectra and 75As NMR spectra below TN. In hole-doped crystals with x>0.01, similar 55Mn ZFNMR spectra were observed and the AFM state was revealed to be robust up to x=0.4 with the ordered moment nearly independent of x. The nuclear spin-lattice relaxation rates (1/T1) for both nuclei in the doped samples follow the Korringa relation T1T=const, indicating a metallic state. This confirms the coexistence of AFM ordered localized Mn spins and conduction carriers from a microscopic point of view. From the x dependence of (T1T)−1/2 for both nuclei, we conclude that this transition is caused by vanishing of the hole concentration as the transition is approached from the metallic side.

  20. Suppression of the metal-insulator transition by magnetic field in (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} (y = 0.0625)

    SciTech Connect

    Naito, Tomoyuki Fujishiro, Hiroyuki; Nishizaki, Terukazu; Kobayashi, Norio; Hejtmánek, Jiří; Knížek, Karel; Jirák, Zdeněk

    2014-06-21

    The (Pr{sub 1−y}Y{sub y}){sub 0.7}Ca{sub 0.3}CoO{sub 3} compound (y = 0.0625, T{sub MI-SS}=40 K), at the lower limit for occurrence of the first-order metal-insulator (MI) and simultaneous spin-state (SS) transitions, has been studied using electrical resistivity and magnetization measurements in magnetic fields up to 17 T. The isothermal experiments demonstrate that the low-temperature insulating phase can be destabilized by an applied field and the metallic phase returns well below the transition temperature T{sub MI-SS}. The reverse process with decreasing field occurs with a significant hysteresis. The temperature scans taken at fixed magnetic fields reveal a parabolic-like decrease in T{sub MI-SS} with increasing field strength and a complete suppression of the MI-SS transition in fields above 9 T.

  1. Metal-insulator transition and emergence of spontaneous polarization in (La1-xSrxMnO3)m /(LaNiO3)n superlattices constructed from metallic building blocks

    NASA Astrophysics Data System (ADS)

    Ghosh, Saurabh; Mishra, Rohan; Hoffman, Jason; Bhattacharya, Anand; Borisevich, Albina Y.; Pantelides, Sokrates T.

    La0.7Sr0.3MnO3 and LaNiO3 are metallic oxides. However, short-period superlattices of the form (La0.7Sr0.3MnO3)m /(LaNiO3)n show insulating behavior depending on m and n. In particular, the insulating property is robust when m = n = 2 (SL 2/2). Here, using first-principles density functional theory (DFT) and DFT+U (static d - d Coulomb interaction), we explain the experimental observation and discuss a general mechanism that underlies such metal-insulator transition for different m and n. The general mechanism is based on the finding that disproportionation on Ni sites is the key. Further, we predict that insulating SL 2/2 is ferroelectric with large spontaneous polarization. The ferroelectric distortion persists in the cases where the superlattices are metallic, which leads to the possibility of designing a new family of 'polar metals'. Finally, we discuss the origin of such polar distortion and its coupling with the magnetic properties (by considering spin-phonon coupling) of the material. This work is supported by DOE Grant Number DE-FG02-09ER46554 and DOE BES DMSE.

  2. Thin film phase transition materials development program

    NASA Astrophysics Data System (ADS)

    Case, W. E.

    1985-04-01

    A number of application concepts have emerged based on the idea that a phase transition thin film such as vanadium dioxide provides a high resolution, two-dimensional format for switching, recording, and processing optical signals. These applications range from high density optical disk recording systems and optical data processing to laser protection devices, infrared FLIRS and seekers, laser radar systems and IR scene simulators. All application candidates have a potential for providing either a totally new capability, an improved performance, a lower cost, or combinations of the three. Probably of greatest significance is the emergence of agile sensor concepts arising out of some of the film's special properties. These are represented by the above FLIRs, seekers and laser radar systems. A three year research program has been completed to advance the state-of-the-art in the preparation and characterization of selected thin film phase transition materials. The objectives of the program were: (1) to expand the data base and improve operational characteristics of Vought prepared vanadium dioxide thin films, (2) to evolve process chemistry and subsequently characterize several new program materials, including rare-earth chalcogenides, organic semiconductor charge complexes, alloys of transition metal oxides, and metal-insulator cermets, and (3) to spin-off new applications and concepts.

  3. Enhanced ferromagnetic and metal insulator transition in Sm0.55Sr0.45MnO3 thin films: Role of oxygen vacancy induced quenched disorder

    NASA Astrophysics Data System (ADS)

    Srivastava, M. K.; Siwach, P. K.; Kaur, A.; Singh, H. K.

    2010-11-01

    Effect of quenched disorder (QD) caused by oxygen vacancy (OV) and substrate induced inhomogeneous compressive strain, on the magnetic and transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films is investigated. QD is related intimately to the ordering/disordering of the OVs and controls the paramagnetic-ferromagnetic/insulator-metal transition. OV ordered films show enhanced TC/TIM˜165 K, which is depressed by oxygen annealing. OV disordering realized by quenching reduces TC/TIM. The first order IM transition observed in SSMO single crystals is transformed into nonhysteretic and continuous one in the OV ordered films. QD appears to be diluted by OV disorder/annihilation and results in stronger carrier localization.

  4. Electric-field-driven Mott metal-insulator transition in correlated thin films: An inhomogeneous dynamical mean-field theory approach

    NASA Astrophysics Data System (ADS)

    Bakalov, P.; Nasr Esfahani, D.; Covaci, L.; Peeters, F. M.; Tempere, J.; Locquet, J.-P.

    2016-04-01

    Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, a local density approximation (LDA) is considered in which the particle density n , quasiparticle residue Z , and spectral weight at the Fermi level A (ω =0 ) of each layer are approximated by a homogeneous bulk environment. A systematic comparison between the two approaches reveals that the less expensive LDA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. LDA values for n are overall more reliable than those for Z and A (ω =0 ) . The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

  5. Characterization of quantum phase transition using holographic entanglement entropy

    NASA Astrophysics Data System (ADS)

    Ling, Yi; Liu, Peng; Wu, Jian-Pin

    2016-06-01

    The entanglement exhibits extremal or singular behavior near quantum critical points (QCPs) in many condensed matter models. These intriguing phenomena, however, still call for a widely accepted understanding. In this paper we study this issue in holographic framework. We investigate the connection between the holographic entanglement entropy (HEE) and the quantum phase transition (QPT) in a lattice-deformed Einstein-Maxwell-Dilaton theory. Novel backgrounds exhibiting metal-insulator transitions (MIT) have been constructed in which both metallic phase and insulating phase have vanishing entropy density in zero temperature limit. We find that the first order derivative of HEE with respect to lattice parameters exhibits extremal behavior near QCPs. We propose that it would be a universal feature that HEE or its derivatives with respect to system parameters can characterize QPT in a generic holographic system. Our work opens a window for understanding the relation between entanglement and the QPT from a holographic perspective.

  6. Monoclinic and Correlated Metal Phase in VO2 as Evidence of the Mott Transition: Coherent Phonon Analysis

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak; Lee, Yong Wook; Kim, Bong-Jun; Chae, Byung-Gyu; Yun, Sun Jin; Kang, Kwang-Yong; Han, Kang-Jeon; Yee, Ki-Ju; Lim, Yong-Sik

    2006-12-01

    In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 and 6.0 THz indicating the rutile metal phase of VO2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68°C. The monoclinic and correlated metal (MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photoassisted hole excitation, which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate nonequilibrium state.

  7. Metal-insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

    NASA Astrophysics Data System (ADS)

    Capon, F.; Laffez, P.; Bardeau, J.-F.; Simon, P.; Lacorre, P.; Zaghrioui, M.

    2002-07-01

    Nd0.7Eu0.3NiO3 thin films are deposited by rf sputtering and subsequent oxygen pressure annealing on (100) oriented silicon substrate. We characterize the thermochromic properties of films by measuring electrical transition, infrared transmittance, and reflectance. The thermochromic effect at room temperature is observed. Resistivity measurements exhibit a sharper hysteresis loop than is usually observed in NdNiO3 thin films. Infrared properties in the 8-14 mum wavelength range spectra reveal a contrast of 30% in reflectance and 55% in transmittance.

  8. Metal insulator transition and magnetotransport anomalies in perovskite SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} thin films

    SciTech Connect

    Biswas, Abhijit; Lee, Yong Woo; Kim, Sang Woo; Jeong, Yoon Hee

    2015-03-21

    We investigated the nature of transport and magnetic properties in SrIr{sub 0.5}Ru{sub 0.5}O{sub 3} (SIRO), which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on various substrates (e.g., SrTiO{sub 3} (001), (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7} (001), and LaAlO{sub 3} (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures (T{sub MIT} ∼ 80 K on SrTiO{sub 3}, ∼90 K on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}TaAlO{sub 6}){sub 0.7}, and ∼100 K on LaAlO{sub 3}) in resistivity. At temperature 300 K ≥ T ≥ T{sub MIT}, SIRO is metallic and its resistivity follows a T{sup 3/2} power law, whereas insulating nature at T < T{sub MIT} is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO{sub 3} (001) shows negative MR at T < 25 K and positive MR at T > 25 K, with negative MR ∝ B{sup 1/2} and positive MR ∝ B{sup 2}; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO{sub 3} (001) at T < 25 K in the localized regime validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.

  9. Spin-orbit tuned metal-insulator transitions in single-crystal Sr₂Ir1–xRhxO₄ (0≤x≤1)

    DOE PAGESBeta

    Qi, T. F.; Korneta, O. B.; Li, L.; Butrouna, K.; Cao, V. S.; Wan, Xiangang; Schlottmann, P.; Kaul, R. K.; Cao, G.

    2012-09-06

    Sr₂IrO₄ is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr₂RhO₄ is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic, and thermal properties reveals that substituting 4d Rh⁴⁺ (4d⁵) ions for 5d Ir⁴⁺ (5d⁵) ions in Sr₂IrO₄ directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr₂Ir1–xRhxO₄ featuring two major effects: (1) Light Rh doping (0 ≤ x ≤ 0.16) prompts a simultaneous andmore » precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x = 0. (2) However, with heavier Rh doping [0.24 < x < 0.85 (±0.05)] disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x = 1. The intricacy of Sr₂Ir1–xRhxO₄ is further highlighted by comparison with Sr₂Ir1–xRuxO₄ where Ru⁴⁺ (4d⁴) drives a direct crossover from the insulating to metallic states.« less

  10. Holographic magnetic phase transition

    SciTech Connect

    Lifschytz, Gilad; Lippert, Matthew

    2009-09-15

    We study four-dimensional interacting fermions in a strong magnetic field, using the holographic Sakai-Sugimoto model of intersecting D4- and D8-branes in the deconfined, chiral-symmetric parallel phase. We find that as the magnetic field is varied, while staying in the parallel phase, the fermions exhibit a first-order phase transition in which their magnetization jumps discontinuously. Properties of this transition are consistent with a picture in which some of the fermions jump to the lowest Landau level. Similarities to known magnetic phase transitions are discussed.

  11. Photoinduced phase transitions.

    PubMed

    Bennemann, K H

    2011-02-23

    Optically induced ultrafast electronic excitations with sufficiently long lifetimes may cause strong effects on phase transitions like structural and nonmetal→metal ones and on supercooling, supersaturation, etc. Examples are the transitions diamond→graphite, graphite→graphene, non-metal→metal, solid→liquid and vapor→liquid, solid. Photoinduced formation of graphene and water condensation of saturated or supersaturated vapor due to increased bonding amongst water molecules are of particular interest. These nonequilibrium transitions are an ultrafast response, on a few hundred fs time scale, to the fast low to large energy electronic excitations. The energy of the photons is converted into electronic energy via electronic excitations changing the cohesive energy. This changes the chemical potential controlling the phase transition. In view of the advances in laser optics photon induced transitions are expected to become an active area in nonequilibrium physics and phase transition dynamics. Conservation laws like energy or angular momentum conservation control the time during which the transitions occur. Since the photon induced effects result from weakening or strengthening of the bonding between the atoms or molecules transitions like solid/liquid, etc can be shifted in both directions. Photoinduced transitions will be discussed from a unified point of view. PMID:21411879

  12. Percolation behavior in metallic-insulator composite systems and the filling factor near the percolation threshold

    NASA Astrophysics Data System (ADS)

    Mukherjee, Rupam; Mishra, Debabrata; Huang, Zhifeng; Nadgorny, Boris

    2012-10-01

    We investigate the percolation behavior in various composite metal -- insulator systems including LiCoO2/ CrO2, MgB2/Al2O3, CrO2/Al2O3, CrO2/ CaCO3. The effect of particle size and shapes in these systems has been studied to better understand the geometrical phase transitions. The power law exponent around the percolation threshold has been found to be 2.0±0.04 in all the cases, which agrees well with the theoretical result. Interestingly, the filling factor of these composite systems also exhibits the power law dependence near the percolation threshold with the value found to be dependent on the shape of the insulating particle. The exponent ranges from 0.2 to 0.4 depending on size of particles of a given shape in the composite system.

  13. Electroweak Phase Transitions

    NASA Astrophysics Data System (ADS)

    Anderson, Gregory Wayne

    An analytic treatment of the one Higgs doublet, electroweak phase transition is given. The phase transition is first order, occurs by the nucleation of thin walled bubbles, and completes at a temperature where the order parameter, _ {T}, is significantly smaller than it is when the origin becomes absolutely unstable. The rate of anomalous baryon number violation is an exponentially sensitive function of T. In very minimal extensions of the standard model it is quite easy to increase T so that anomalous baryon number violation is suppressed after completion of the phase transition. Hence baryogenesis at the electroweak phase transition is tenable in minimal extensions of the standard model. In some cases additional phase transitions are possible. For a light Higgs boson, when the top quark mass is sufficiently large, the state where the Higgs field has a vacuum expectation value = 246 GeV is not the true minimum of the Higgs potential. When this is the case, and when the top quark mass exceeds some critical value, thermal fluctuations in the early universe would have rendered the state = 246 GeV unstable. The requirement that the state = 246 GeV is sufficiently long lived constrains the masses of the Higgs boson and the top quark. Finally, we consider whether local phase transitions can be induced by heavy particles which act as seeds for deformations in the scalar field. Semi-classical reasoning suggests that, when a particle receives a contribution to its mass from the vacuum expectation value of a scalar, under certain conditions, the ground state of particle number one contains a 'dimple' or shallow scalar field condensate around the particle. We argue that this is not the case. A careful analysis, taking into account quantum mechanics, shows that the semi-classical approximation is a poor one. We find that there are no energetically favored one-particle dimple solutions for perturbative couplings.

  14. Electroweak phase transitions

    SciTech Connect

    Anderson, G.W.

    1991-09-16

    An analytic treatment of the one Higgs doublet, electroweak phase transition is given. The phase transition is first order, occurs by the nucleation of thin walled bubbles and completes at a temperature where the order parameter, {l angle}{phi}{r angle}{sub T} is significantly smaller than it is when the origin becomes absolutely unstable. The rate of anomalous baryon number violation is an exponentially function of {l angle}{phi}{r angle}{sub T}. In very minimal extensions of the standard model it is quite easy to increase {l angle}{phi}{r angle}{sub T} so that anomalous baryon number violation is suppressed after completion of the phase transition. Hence baryogenesis at the electroweak phase transition is tenable in minimal of the standard model. In some cases additional phase transitions are possible. For a light Higgs boson, when the top quark mass is sufficiently large, the state where the Higgs field has a vacuum expectation value {l angle}{phi}{r angle} = 246 GeV is not the true minimum of the Higgs potential. When this is the case, and when the top quark mass exceeds some critical value, thermal fluctuations in the early universe would have rendered the state {l angle}{phi}{r angle} = 246 GeV unstable. The requirement that the state {l angle}{phi}{r angle} = 246 GeV is sufficiently long lived constrains the masses of the Higgs boson and the top quark. Finally, we consider whether local phase transitions can be induced by heavy particles which act as seeds for deformations in the scalar field.

  15. Electroweak phase transitions

    SciTech Connect

    Anderson, G.W.

    1991-09-16

    An analytic treatment of the one Higgs doublet, electroweak phase transition is given. The phase transition is first order, occurs by the nucleation of thin walled bubbles and completes at a temperature where the order parameter, {l_angle}{phi}{r_angle}{sub T} is significantly smaller than it is when the origin becomes absolutely unstable. The rate of anomalous baryon number violation is an exponentially function of {l_angle}{phi}{r_angle}{sub T}. In very minimal extensions of the standard model it is quite easy to increase {l_angle}{phi}{r_angle}{sub T} so that anomalous baryon number violation is suppressed after completion of the phase transition. Hence baryogenesis at the electroweak phase transition is tenable in minimal of the standard model. In some cases additional phase transitions are possible. For a light Higgs boson, when the top quark mass is sufficiently large, the state where the Higgs field has a vacuum expectation value {l_angle}{phi}{r_angle} = 246 GeV is not the true minimum of the Higgs potential. When this is the case, and when the top quark mass exceeds some critical value, thermal fluctuations in the early universe would have rendered the state {l_angle}{phi}{r_angle} = 246 GeV unstable. The requirement that the state {l_angle}{phi}{r_angle} = 246 GeV is sufficiently long lived constrains the masses of the Higgs boson and the top quark. Finally, we consider whether local phase transitions can be induced by heavy particles which act as seeds for deformations in the scalar field.

  16. Electronic Griffiths Phases and Quantum Criticality at Disordered Mott Transitions

    NASA Astrophysics Data System (ADS)

    Dobrosavljevic, Vladimir

    2012-02-01

    The effects of disorder are investigated in strongly correlated electronic systems near the Mott metal-insulator transition. Correlation effects are foundootnotetextE. C. Andrade, E. Miranda, and V. Dobrosavljevic, Phys. Rev. Lett., 102, 206403 (2009). to lead to strong disorder screening, a mechanism restricted to low-lying electronic states, very similar to what is observed in underdoped cuprates. These results suggest, however, that this effect is not specific to disordered d-wave superconductors, but is a generic feature of all disordered Mott systems. In addition, the resulting spatial inhomogeneity rapidly increasesootnotetextE. C. Andrade, E. Miranda, and V. Dobrosavljevic, Phys. Rev. Lett., 104 (23), 236401 (2010). as the Mott insulator is approached at fixed disorder strength. This behavior, which can be described as an Electronic Griffiths Phase, displays all the features expected for disorder-dominated Infinite-Randomness Fixed Point scenario of quantum criticality.

  17. String mediated phase transitions

    NASA Technical Reports Server (NTRS)

    Copeland, ED; Haws, D.; Rivers, R.; Holbraad, S.

    1988-01-01

    It is demonstrated from first principles how the existence of string-like structures can cause a system to undergo a phase transition. In particular, the role of topologically stable cosmic string in the restoration of spontaneously broken symmetries is emphasized. How the thermodynamic properties of strings alter when stiffness and nearest neighbor string-string interactions are included is discussed.

  18. Large epitaxial bi-axial strain induces a Mott-like phase transition in VO{sub 2}

    SciTech Connect

    Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2014-08-18

    The metal insulator transition (MIT) in vanadium dioxide (VO{sub 2}) has been an important topic for recent years. It has been generally agreed upon that the mechanism of the MIT in bulk VO{sub 2} is considered to be a collaborative Mott-Peierls transition, however, the effect of strain on the phase transition is much more complicated. In this study, the effect of the large strain on the properties of VO{sub 2} films was investigated. One remarkable result is that highly strained epitaxial VO{sub 2} thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO{sub 2} films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO{sub 2} resulted in a phase transition temperature of ∼433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO{sub 2} can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition.

  19. Visualization of local phase transition behaviors in ultrathin VO2/TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Sohn, Ahrum; Kanki, Terou; Tanaka, Hidekazu; Kim, Dong-Wook

    VO2 undergoes the first order phase transition and two electronic phases can coexist near the critical temperature. We investigated evolution of the surface work function maps of epitaxial VO2/TiO2 thin films (thickness: 15, 30, and 45 nm) using Kelvin probe force microscopy (KPFM) measurements in the temperature range of 285-330 K. Fully strained thin films were almost free of grain boundaries and thicker films had dislocations caused by strain relaxation. The sample's work function decreases, while spanning the metal-insulator transition (MIT). The work function maps clearly revealed coexistence of the two distinct phase domains. The surface area fraction of the insulating phase near the dislocations was higher than that in other regions. Thicker films have complicated domain patterns; hence, the three-dimensional percolation model properly described the MIT behaviors. In contrast, the two-dimensional percolation model well explained the transition behaviors of uniformly strained thinner films.

  20. Emergence and Phase Transitions

    NASA Astrophysics Data System (ADS)

    Sikkema, Arnold

    2006-05-01

    Phase transitions are well defined in physics through concepts such as spontaneous symmetry breaking, order parameter, entropy, and critical exponents. But emergence --- also exhibiting whole-part relations (such as top-down influence), unpredictability, and insensitivity to microscopic detail --- is a loosely-defined concept being used in many disciplines, particularly in psychology, biology, philosophy, as well as in physics[1,2]. I will review the concepts of emergence as used in the various fields and consider the extent to which the methods of phase transitions can clarify the usefulness of the concept of emergence both within the discipline of physics and beyond.1. Robert B. Laughlin, A Different Universe: Reinventing Physics from the Bottom Down (New York: Basic Books, 2005). 2. George F.R. Ellis, ``Physics and the Real World'', Physics Today, vol. 58, no. 7 (July 2005) pp. 49-54.

  1. Nonpercolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1 -xCaxMnO3

    NASA Astrophysics Data System (ADS)

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-01

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x =0.18 ,0.22 ). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS˜720 K. The study utilized explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1 -xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ˜1 nm with observably smaller distortions. In the x =0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ˜1050 K), where they are crystallographically prohibited. Their magnitude and subnanometer spatial extent remain unchanged.

  2. Non percolative nature of the metal-insulator transition and persistence of local Jahn-Teller distortions in the rhombohedral regime of La1-xCaxMnO3

    DOE PAGESBeta

    Shatnawi, Mouath; Bozin, Emil S.; Mitchell, J. F.; Billinge, Simon J. L.

    2016-04-25

    Evolution of the average and local crystal structure of Ca-doped LaMnO3 has been studied across the metal to insulator (MI) and the orthorhombic to rhombohedral (OR) structural phase transitions over a broad temperature range for two Ca concentrations (x = 0.18,0.22). Combined Rietveld and high real space resolution atomic pair distribution function (PDF) analysis of neutron total scattering data was carried out with aims of exploring the possibility of nanoscale phase separation (PS) in relation to MI transition, and charting the evolution of local Jahn-Teller (JT) distortion of MnO6 octahedra across the OR transition at TS~720 K. The study utilizedmore » explicit two-phase PDF structural modeling, revealing that away from TMI there is no evidence for nanoscale phase coexistence. The local JT distortions disappear abruptly upon crossing into the metallic regime both with doping and temperature, with only a small temperature-independent signature of quenched disorder being observable at low temperature as compared to CaMnO3. The results hence do not support the percolative scenario for the MI transition in La1–xCaxMnO3 based on PS, and question its ubiquity in the manganites. In contrast to LaMnO3 that exhibits long-range orbital correlations and sizable octahedral distortions at low temperature, the doped samples with compositions straddling the MI boundary exhibit correlations (in the insulating regime) limited to only ~1 nm with observably smaller distortions. In the x = 0.22 sample local JT distortions are found to persist across the OR transition and deep into the R phase (up to ~1050 K), where they are crystallographically prohibited. As a result, their magnitude and subnanometer spatial extent remain unchanged.« less

  3. Thin Nanoporous Metal-Insulator-Metal Membranes.

    PubMed

    Aramesh, Morteza; Djalalian-Assl, Amir; Yajadda, Mir Massoud Aghili; Prawer, Steven; Ostrikov, Kostya Ken

    2016-02-01

    Insulating nanoporous materials are promising platforms for soft-ionizing membranes; however, improvement in fabrication processes and the quality and high breakdown resistance of the thin insulator layers are needed for high integration and performance. Here, scalable fabrication of highly porous, thin, silicon dioxide membranes with controlled thickness is demonstrated using plasma-enhanced chemical-vapor-deposition. The fabricated membranes exhibit good insulating properties with a breakdown voltage of 1 × 10(7) V/cm. Our calculations suggest that the average electric field inside a nanopore of the membranes can be as high as 1 × 10(6) V/cm; sufficient for ionization of wide range of molecules. These metal-insulator-metal nanoporous arrays are promising for applications such soft ionizing membranes for mass spectroscopy. PMID:26846250

  4. Active Metal-Insulator-Metal Plasmonic Devices

    NASA Astrophysics Data System (ADS)

    Diest, Kenneth Alexander

    As the field of photonics constantly strives for ever smaller devices, the diffraction limit of light emerges as a fundamental limitation in this pursuit. A growing number of applications for optical "systems on a chip" have inspired new ways of circumventing this issue. One such solution to this problem is active plasmonics. Active plasmonics is an emerging field that enables light compression into nano-structures based on plasmon resonances at a metal-dielectric interface and active modulation of these plasmons with an applied external field. One area of active plasmonics has focused on replacing the dielectric layer in these waveguides with an electro-optic material and designing the resulting structures in such a way that the transmitted light can be modulated. These structures can be utilized to design a wide range of devices including optical logic gates, modulators, and filters. This thesis focuses on replacing the dielectric layer within a metal-insulator-metal plasmonic waveguide with a range of electrically active materials. By applying an electric field between the metal layers, we take advantage of the electro-optic effect in lithium niobate, and modulating the carrier density distribution across the structure in n-type silicon and indium tin oxide. The first part of this thesis looks at fabricating metal-insulator-metal waveguides with ion-implantation induced layer transferred lithium niobate. The process is analyzed from a thermodynamic standpoint and the ion-implantation conditions required for layer transfer are determined. The possible failure mechanisms that can occur during this process are analyzed from a thin-film mechanics standpoint, and a metal-bonding method to improve successful layer transfer is proposed and analyzed. Finally, these devices are shown to naturally filter white light into individual colors based on the interference of the different optical modes within the dielectric layer. Full-field electromagnetic simulations show that

  5. Uniaxial pressure effect of Metal-Insulator Transition (TMI) in oriented Sm0.55(Sr0.5Ca0.5)0.45MnO3

    NASA Astrophysics Data System (ADS)

    Arumugam, Sonachalam; Mohan Radheep, D.; Sarkar, P.; Mandal, P.; Arumugam Team; Prabhat Mandal Collaboration

    2013-06-01

    Perovskite type manganites R1 - xAxMnO3 (R: rare earth ions, A: alkaline earth ions) exhibit various fundamental phenomena like colossal magnetoresistance (CMR), phase separation, and first-order ferromagnetic (FM) to paramagnetic (PM) phase transition etc. Similar to CMR, piezoresistance (PR), the change in electrical resistance in response to external pressure, can also be important parameter for various technological applications. Several studies shows that the order of phase transition can be changed either by applying external perturbations like magnetic field, pressure (P) , etc. or internally like doping etc. SSCMO single crystal was grown using floating zone technique and the quality was carefully checked and aligned along the c axis as well as ab-plane. We have investigated the effect of uniaxial pressure (P) on electrical resistivity along the ab-plane and c - axis in a single crystal of SSCMO. A huge PR ~107 % at P = 90 MPa and a remarkable increase (~79 K/GPa) of TMI have been observed with the application of P || c - axis, while TMI decreases at the rate of ~77 K/GPa for P⊥ c axis. These values of PR and dTMI /dP are much larger than those observed in other perovskite and bilayer manganites. Hence, these materials may be used for various technological applications. The authors SA and DMR wishes to thank DST, UGC and CSIR-SRF scheme (India) for the financial support to carry out the research work.

  6. Metal-insulator transition upon heating and negative-differential-resistive-switching induced by self-heating in BaCo{sub 0.9}Ni{sub 0.1}S{sub 1.8}

    SciTech Connect

    Fisher, B.; Genossar, J.; Chashka, K. B.; Patlagan, L.; Reisner, G. M.

    2014-04-14

    The layered compound BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (0.05 < x < 0.2 and 0.05 < y < 0.2) exhibits an unusual first-order structural and electronic phase transition from a low-T monoclinic paramagnetic metal to a high-T tetragonal antiferromagnetic insulator around 200 K with huge hysteresis (∼40 K) and large volume change (∼0.01). Here, we report on unusual voltage-controlled resistive switching followed by current-controlled resistive switching induced by self-heating in polycrystalline BaCo{sub 1−x}Ni{sub x}S{sub 2−y} (nominal x = 0.1 and y = 0.2). These were due to the steep metal to insulator transition upon heating followed by the activated behavior of the resistivity above the transition. The major role of Joule heating in switching is supported by the absence of nonlinearity in the current as function of voltage, I(V), obtained in pulsed measurements, in the range of electric fields relevant to d.c. measurements. The voltage-controlled negative differential resistance around the threshold for switching was explained by a simple model of self-heating. The main difficulty in modeling I(V) from the samples resistance as function of temperature R(T) was the progressive increase of R(T), and to a lesser extend the decrease of the resistance jumps at the transitions, caused by the damage induced by cycling through the transitions by heating or self-heating. This was dealt with by following systematically R(T) over many cycles and by using the data of R(T) in the heating cycle closest to that of the self-heating one.

  7. metal-insulator-metal (MIM) devices

    NASA Astrophysics Data System (ADS)

    Khaldi, O.; Jomni, F.; Gonon, P.; Mannequin, C.; Yangui, B.

    2014-09-01

    This paper is devoted to the study of the electrical properties of Au/HfO2/TiN metal-insulator-metal (MIM) capacitors in three distinctive modes: (1) alternative mode ( C- f), (2) dynamic regime [thermally stimulated currents, TSCs I( T)] and (3) static mode [ I( V)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency C- f characteristic possesses a low-frequency dispersion that arises for high temperature ( T > 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy E a ~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C ( E a ~ 1 eV) is in agreement with impedance spectroscopy ( C- f). On the other hand, when the MIM structures are analyzed in static mode, the I- V plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.

  8. Quantum phase transition in space

    SciTech Connect

    Damski, Bogdan; Zurek, Wojciech H

    2008-01-01

    A quantum phase transition between the symmetric (polar) phase and the phase with broken symmetry can be induced in a ferromagnetic spin-1 Bose-Einstein condensate in space (rather than in time). We consider such a phase transition and show that the transition region in the vicinity of the critical point exhibits scalings that reflect a compromise between the rate at which the transition is imposed (i.e., the gradient of the control parameter) and the scaling of the divergent healing length in the critical region. Our results suggest a method for the direct measurement of the scaling exponent {nu}.

  9. Theory of antiferroelectric phase transitions

    NASA Astrophysics Data System (ADS)

    Tolédano, Pierre; Guennou, Mael

    2016-07-01

    At variance with structural ferroic phase transitions which give rise to macroscopic tensors coupled to macroscopic fields, criteria defining antiferroelectric (AFE) phase transitions are still under discussion due to the absence of specific symmetry properties characterizing their existence. They are recognized by the proximity of a ferroelectric (FE) phase induced under applied electric field, with a double hysteresis loop relating the induced polarization to the electric field and a typical anomaly of the dielectric permittivity. Here, we show that there exist indeed symmetry criteria defining AFE transitions. They relate the local symmetry of the polar crystallographic sites emerging at an AFE phase transition with the macroscopic symmetry of the AFE phase. The dielectric properties of AFE transitions are deduced from a Landau theoretical model in which ferroelectric and ferrielectric phases are shown to stabilize as the result of specific symmetry-allowed couplings of the AFE order parameter with the field-induced polarization.

  10. Transient slip behaviour of metal/insulator pairs at 4.2 K

    NASA Astrophysics Data System (ADS)

    Kensley, R. S.; Maeda, H.; Iwasa, Y.

    Experiments have been conducted to observe the sliding behaviour, at 4.2 K, of freshly prepared metal/insulator combinations during a set of sequential slip tests. Measurements of the tangential force versus displacement, as well as displacement and acoustic emission rate versus time, were recorded. A triboelectric effect was also monitored. Depending on the particular metal/insulator pair tested, completely stable (slow velocity), completely unstable (rapid velocity), or a transition from unstable to stable sliting behaviour was observed. This transition behaviour was noticed for several metal/insulator combinations commonly used in superconducting magnet windings. An asperity plowing model is proposed to account for this behaviour, and is based upon the abrasive action of rubbing materials poorly matched in hardness against each other. The training phenomenon in unimpregnated superconducting magnet windings may be attributable to this wearing-in of frictional surfaces. A simple epoxy coating technique was successful in eliminating initial rapid slip events, thereby completely stabilizing the sliding behaviour of a conductor/insulator combination.

  11. Phase Transitions for Suspension Flows

    NASA Astrophysics Data System (ADS)

    Iommi, Godofredo; Jordan, Thomas

    2013-06-01

    This paper is devoted to studying the thermodynamic formalism for suspension flows defined over countable alphabets. We are mostly interested in the regularity properties of the pressure function. We establish conditions for the pressure function to be real analytic or to exhibit a phase transition. We also construct an example of a potential for which the pressure has countably many phase transitions.

  12. Phase transitions in disordered systems

    NASA Astrophysics Data System (ADS)

    Hrahsheh, Fawaz Y.

    Disorder can have a wide variety of consequences for the physics of phase transitions. Some transitions remain unchanged in the presence of disorder while others are completely destroyed. In this thesis we study the effects of disorder on several classical and quantum phase transitions in condensed matter systems. After a brief introduction, we study the ferromagnetic phase transition in a randomly layered Heisenberg magnet using large-scale Monte-Carlo simulations. Our results provide numerical evidence for the exotic infinite-randomness scenario. We study classical and quantum smeared phase transitions in substitutional alloys A1-xBx. Our results show that the disorder completely destroys the phase transition with a pronounced tail of the ordered phase developing for all compositions x < 1. In addition, we find that short-ranged disorder correlations can have a dramatic effect on the transition. Moreover, we show an experimental realization of the composition-tuned ferromagnetic-to-paramagnetic quantum phase transition in Sr1-xCa xRuO3. We investigate the effects of disorder on first-order quantum phase transitions on the example of the N-color quantum Ashkin-Teller model. By means of a strong disorder renormalization group, we demonstrate that disorder rounds the first-order transition to a continuous one for both weak and strong coupling between the colors. Finally, we investigate the superfluid-insulator quantum phase transition of one-dimensional bosons with off-diagonal disorder by means of large-scale Monte-Carlo simulations. Beyond a critical disorder strength, we find nonuniversal, disorder dependent critical behavior.

  13. Fluctuation driven electroweak phase transition

    NASA Technical Reports Server (NTRS)

    Gleiser, Marcelo; Kolb, Edward W.

    1991-01-01

    We examine the dynamics of the electroweak phase transition in the early Universe. For Higgs masses in the range 46 less than or = M sub H less than or = 150 GeV and top quark masses less than 200 GeV, regions of symmetric and asymmetric vacuum coexist to below the critical temperature, with thermal equilibrium between the two phases maintained by fluctuations of both phases. We propose that the transition to the asymmetric vacuum is completed by percolation of these subcritical fluctuations. Our results are relevant to scenarios of baryogenesis that invoke a weakly first-order phase transition at the electroweak scale.

  14. Transition of Bery Phase and Pancharatnam Phase and Phase Change

    NASA Astrophysics Data System (ADS)

    Fu, Guolan; Pan, Hui; Wang, Zisheng

    2016-07-01

    Berry Phase and time-dependent Pancharatnam phase are investigated for nuclear spin polarization in a liquid by a rotation magnetic field, where two-state mixture effect is exactly included in the geometric phases. We find that when the system of nuclear spin polarization is in the unpolarized state, the transitive phenomena of both Berry phase and Pancharatnam phase are taken place. For the polarized system, in contrast, such a transition is not taken place. It is obvious that the transitions of geometric phase correspond to the phase change of physical system.

  15. Hadron-Quark Phase Transition

    SciTech Connect

    Cavagnoli, Rafael; Menezes, Debora P.; Providencia, Constanca

    2009-06-03

    In the present work we study the hadron-quarkphase transition with boson condensation by investigating the binodal surface and extending it to finite temperature in order to mimic the QCD phase diagram.

  16. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  17. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-04-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

  18. Phase transitions via selective elemental vacancy engineering in complex oxide thin films.

    PubMed

    Lee, Sang A; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  19. Holographic approach to phase transitions

    SciTech Connect

    Franco, Sebastian; Garcia-Garcia, Antonio M.; Rodriguez-Gomez, Diego

    2010-02-15

    We provide a description of phase transitions at finite temperature in strongly coupled field theories using holography. For this purpose, we introduce a general class of gravity duals to superconducting theories that exhibit various types of phase transitions (first or second order with both mean and non-mean field behavior) as parameters in their Lagrangian are changed. Moreover the size and strength of the conductivity coherence peak can also be controlled. Our results suggest that certain parameters in the gravitational dual control the interactions responsible for binding the condensate and the magnitude of its fluctuations close to the transition.

  20. Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

    2016-04-01

    VO2 is a unique material that undergoes a reversible phase transformation around 68∘C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32∘C. In addition, the VO2 film possesses a typical metal-insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

  1. Structural phase transition and phonon instabilities in Cu12Sb4S13

    DOE PAGESBeta

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  2. Structural phase transition and phonon instability in Cu12Sb4S13

    DOE PAGESBeta

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  3. Directional coupler and nonlinear Mach-Zehnder interferometer based on metal-insulator-metal plasmonic waveguide.

    PubMed

    Pu, Mingbo; Yao, Na; Hu, Chenggang; Xin, Xuecheng; Zhao, Zeyu; Wang, Changtao; Luo, Xiangang

    2010-09-27

    Directional coupler (DC) and nonlinear Mach-Zehnder interferometer (MZI) based on metal-insulator-metal (MIM) plasmonic waveguide are investigated numerically. We show that the coupling length increases almost linearly with the wavelength and this property is utilized in the design of wavelength division multiplexer (WDM). A nonlinear MZI, with one branch filled with Kerr nonlinear medium, is built to ensure controlling light with light. Employing nonlinear processes including self-phase modulation (SPM) and cross-phase modulation (XPM), intensity-based router and all-optical switch are realized. PMID:20940998

  4. Abrupt Depletion Layer Approximation for the Metal Insulator Semiconductor Diode.

    ERIC Educational Resources Information Center

    Jones, Kenneth

    1979-01-01

    Determines the excess surface change carrier density, surface potential, and relative capacitance of a metal insulator semiconductor diode as a function of the gate voltage, using the precise questions and the equations derived with the abrupt depletion layer approximation. (Author/GA)

  5. Griffiths singularity of quantum phase transition in ion-gated ZrNCl

    NASA Astrophysics Data System (ADS)

    Saito, Yu; Nojima, Tsutomu; Iwasa, Yoshihiro

    Recent technological advances of thin films fabrication, especially mechanical exfoliation, led to discoveries of less-disordered highly-crystalline two-dimensional (2D) superconductors; atomically thin NbSe2 and ion-gated 2D materials, which show intrinsic properties of 2D superconductors with minimal disorder; for example, metallic ground state, and unconventional 2D Ising superconductivity due to pure spin-valley locking effect. In this talk, we focus on magnetotransport properties of an ionic-liquid gated ZrNCl, which exhibited Griffiths singularity-like behavior in superconductor-metal-insulator transition induced by magnetic fields at low carrier concentrations. The overall behavior is quite similar to the recent results of superconducting Ga thin films, in which quantum Griffiths singularity was observed in vortex-glass state. We will discuss the relationship between Griffiths singularity and quantum tunneling or flux flow of vortices phase (vortex liquid) in our system

  6. Phase transition characteristics in the conductivity of VO₂(A) nanowires: size and surface effects.

    PubMed

    Wang, C Q; Shao, Jian; Liu, X L; Chen, Yun; Xiong, W M; Zhang, X Y; Zheng, Yue

    2016-04-21

    Transition-metal oxides have fascinating characteristics, and have been exploited for various applications, such as Mott transistors, optical switches and strain sensors, etc. Vanadium dioxide is a special and important transition-metal oxide, and exhibits the significant behavior of metal-insulator transition. In this work, single crystalline VO2(A) nanowires have been synthesized by a facile hydrothermal method. Due to the size and surface effects, the nanowires with different widths show great disparities in their hysteresis loops, phase transition temperatures and electrical conductivities. Our results show that the phase transition temperature is linearly dependent on the inverse of the nanowire widths, and a similar relationship between the electrical conductivity and the width of the nanowires has also been found. More interestingly, the first-order phase transition of the nanowire even coverts into high-order continuous phase transition when the width is below a critical size. To explore the intrinsic influence of the size and surface effects, the analysis of the transmission electron microscopy measurements showed that the rough surface structure of the nanowire is very different to the internal structure, and the thickness of this rough surface structure almost remains unchanged as the with of the nanowire decreases. Our results indicated that the surface structure has a remarkable effect on the phase transition characteristics decreasing nanowire width, and the suitable heterogeneous nucleation originating from the rough surface structure should play a crucial role in properties of the VO2(A) nanowires. Size-dependent phase transition features of the VO2(A) nanowires also suggest that the size and surface effects must be taken into consideration when designing VO2 nanodevices. PMID:27020733

  7. Growth and phase transition characteristics of pure M-phase VO{sub 2} epitaxial film prepared by oxide molecular beam epitaxy

    SciTech Connect

    Fan, L. L.; Chen, S.; Wu, Y. F.; Chen, F. H.; Chu, W. S.; Chen, X.; Zou, C. W.; Wu, Z. Y.

    2013-09-23

    VO{sub 2} epitaxial film with large size has been prepared by oxide-molecular beam epitaxy method on Al{sub 2}O{sub 3} (0001) substrate. The VO{sub 2} film shows a perfect crystal orientation, uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed that the MIT character is closely associated with the crystal defects such as oxygen vacancies. By controlling the growth condition, the MIT temperature can be tuned through modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase transition behavior of this VO{sub 2} film is discussed in the framework of the hybridization theory and the valence state of vanadium.

  8. Phase transitions in nuclear matter

    SciTech Connect

    Glendenning, N.K.

    1984-11-01

    The rather general circumstances under which a phase transition in hadronic matter at finite temperature to an abnormal phase in which baryon effective masses become small and in which copious baryon-antibaryon pairs appear is emphasized. A preview is also given of a soliton model of dense matter, in which at a density of about seven times nuclear density, matter ceases to be a color insulator and becomes increasingly color conducting. 22 references.

  9. Carrier tuning the metal-insulator transition of epitaxial La0.67Sr0.33MnO3 thin film on Nb doped SrTiO3 substrate

    NASA Astrophysics Data System (ADS)

    Zhan, J. M.; Li, P. G.; Liu, H.; Tao, S. L.; Ma, H.; Shen, J. Q.; Pan, M. J.; Zhang, Z. J.; Wang, S. L.; Yuan, G. L.

    2016-04-01

    La0.67Sr0.33MnO3 (LSMO) thin films were deposited on (001)SrTiO3(STO) and n-type doped Nb:SrTiO3(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(TMI) of LSMO film on NSTO is lower than that on STO, and the TMI of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.

  10. Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

    SciTech Connect

    Das, Amit K. Ajimsha, R. S.; Kukreja, L. M.

    2014-05-21

    Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

  11. Pressure-Induced Mott Transition Followed by a 24-K Superconducting Phase in BaFe2S3

    NASA Astrophysics Data System (ADS)

    Yamauchi, Touru; Hirata, Yasuyuki; Ueda, Yutaka; Ohgushi, Kenya

    2015-12-01

    We performed high-pressure study for a Mott insulator BaFe2S3 , by measuring dc resistivity and ac susceptibility up to 15 GPa. We found that the antiferromagnetic insulating state at the ambient pressure is transformed into a metallic state at the critical pressure, Pc=10 GPa , and the superconductivity with the optimum Tc=24 K emerges above Pc. Furthermore, we found that the metal-insulator transition (Mott transition) boundary terminates at a critical point around 10 GPa and 75 K. The obtained pressure-temperature (P -T ) phase diagram is similar to those of the organic and fullerene compounds; namely, BaFe2S3 is the first inorganic superconductor in the vicinity of bandwidth control type Mott transition.

  12. Phase transition transistors based on strongly-correlated materials

    NASA Astrophysics Data System (ADS)

    Nakano, Masaki

    2013-03-01

    The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

  13. Ground-state tuning of metal-insulator transition by compositional variations in BaI r1 -xR uxO3(0 ≤x ≤1 )

    NASA Astrophysics Data System (ADS)

    Yuan, S. J.; Butrouna, K.; Terzic, J.; Zheng, H.; Aswartham, S.; DeLong, L. E.; Ye, Feng; Schlottmann, P.; Cao, G.

    2016-04-01

    Hexagonal BaIr O3 is a magnetic insulator driven by the spin-orbit interaction (SOI), whereas BaRu O3 is an enhanced paramagnetic metal. Our investigation of structural, magnetic, transport, and thermal properties reveals that substitution of R u4 + (4 d4 ) ions for I r4 + (5 d5 ) ions in BaIr O3 reduces the magnitudes of the SOI and a monoclinic structural distortion and rebalances the competition between the SOI and the lattice degrees of freedom to render an evolution from a magnetic insulting state to a robust metallic state. The central findings of this paper are as follows: (1) light Ru doping (0 transition-metal oxides.

  14. Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film

    NASA Astrophysics Data System (ADS)

    Lin, Tiegui; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen; Yu, Yonghao

    2016-08-01

    In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO2 thin film. SEM images revealed that all the VO2 thin films had crystallite sizes of below 20 nm, and similar configurations. UV-vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal-insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO2. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO2. Furthermore, a room temperature rutile VO2 thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO2 thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  15. Electron-phonon coupling and structural phase transitions in early transition metal oxides and chalcogenides

    NASA Astrophysics Data System (ADS)

    Farley, Katie Elizabeth

    promising catalyst for electrocatalytic water splitting and can catalyze the hydrogen evolution reaction that is utilized within photoelectrochemical cells. Chapters 4 and 5 delve into the synthesis and doping of VO2, which undergoes a metal to insulator transition. Chapter 4 develops a detailed understanding of the influence of doping on the MIT and reports the activation energies of the monoclinic→rutile (insulator→metal) and rutile→monoclinic (metal?insulator) transitions. The dynamical effects of doping on hysteresis are considered for both Mo- and W-doped VO2. Chapter 5 reports the development of synthetic route to produce optical grade VO2 with considerable size control. Smart window applications for this material require small particle sizes in order to reduce visible light scattering. This chapter systematically explores hydrothermal syntheses for the preparation of VO2 and allows for development of mechanistic postulates for obtaining size control.

  16. Spin-orbit tuned metal-insulator transitions in single-crystal Sr₂Ir1–xRhxO₄ (0≤x≤1)

    SciTech Connect

    Qi, T. F.; Korneta, O. B.; Li, L.; Butrouna, K.; Cao, V. S.; Wan, Xiangang; Schlottmann, P.; Kaul, R. K.; Cao, G.

    2012-09-06

    Sr₂IrO₄ is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr₂RhO₄ is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic, and thermal properties reveals that substituting 4d Rh⁴⁺ (4d⁵) ions for 5d Ir⁴⁺ (5d⁵) ions in Sr₂IrO₄ directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr₂Ir1–xRhxO₄ featuring two major effects: (1) Light Rh doping (0 ≤ x ≤ 0.16) prompts a simultaneous and precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x = 0. (2) However, with heavier Rh doping [0.24 < x < 0.85 (±0.05)] disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x = 1. The intricacy of Sr₂Ir1–xRhxO₄ is further highlighted by comparison with Sr₂Ir1–xRuxO₄ where Ru⁴⁺ (4d⁴) drives a direct crossover from the insulating to metallic states.

  17. Non-equilibrium phase transitions

    SciTech Connect

    Mottola, E.; Cooper, F.M.; Bishop, A.R.; Habib, S.; Kluger, Y.; Jensen, N.G.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Non-equilibrium phase transitions play a central role in a very broad range of scientific areas, ranging from nuclear, particle, and astrophysics to condensed matter physics and the material and biological sciences. The aim of this project was to explore the path to a deeper and more fundamental understanding of the common physical principles underlying the complex real time dynamics of phase transitions. The main emphasis was on the development of general theoretical tools to deal with non-equilibrium processes, and of numerical methods robust enough to capture the time-evolving structures that occur in actual experimental situations. Specific applications to Laboratory multidivisional efforts in relativistic heavy-ion physics (transition to a new phase of nuclear matter consisting of a quark-gluon plasma) and layered high-temperature superconductors (critical currents and flux flow at the National High Magnetic Field Laboratory) were undertaken.

  18. Phase Transitions in Dipalmitoylphosphatidylcholine Monolayers.

    PubMed

    Zuo, Yi Y; Chen, Rimei; Wang, Xianju; Yang, Jinlong; Policova, Zdenka; Neumann, A Wilhelm

    2016-08-23

    A self-assembled phospholipid monolayer at an air-water interface is a well-defined model system for studying surface thermodynamics, membrane biophysics, thin-film materials, and colloidal soft matter. Here we report a study of two-dimensional phase transitions in the dipalmitoylphosphatidylcholine (DPPC) monolayer at the air-water interface using a newly developed methodology called constrained drop surfactometry (CDS). CDS is superior to the classical Langmuir balance in its capacity for rigorous temperature control and leak-proof environments, thus making it an ideal alternative to the Langmuir balance for studying lipid polymorphism. In addition, we have developed a novel Langmuir-Blodgett (LB) transfer technique that allows the direct transfer of lipid monolayers from the droplet surface under well-controlled conditions. This LB transfer technique permits the direct visualization of phase coexistence in the DPPC monolayer. With these technological advances, we found that the two-dimensional phase behavior of the DPPC monolayer is analogous to the three-dimensional phase transition of a pure substance. This study has implications in the fundamental understanding of surface thermodynamics as well as applications such as self-assembled monolayers and pulmonary surfactant biophysics. PMID:27479299

  19. Thermal and Magnetic Measurements at Phase Transitions in NiS_2-xSe_x

    NASA Astrophysics Data System (ADS)

    Kuo, Y.-K.; Powell, D. K.; Brill, J. W.; Yao, X.; Honig, J. M.

    1996-03-01

    We have measured the specific heat and magnetic susceptibility of single crystals of the pyrites, NiS_2-xSe_x,(H. Takano and A. Okiji, Jnl. Phys. Soc. Jpn. \\underline50), 3835 (1981) .^,(X. Yao, T. Hogan, C. Kannewurf, and J.M. Honig, to be published in Phys. Rev. B.) with x=0.38, 0.44, 0.51, 0.55, and 0.58. Anomalies in both properties were observed for all samples at the (``A-P'') antiferromagnetic-paramagnetic transitions; T_A-P increases from 35 K to 92 K with x. The (``WF-A'') weak (canted) ferromagnetic-antiferromagnetic transition (T_WF-A < 25 K) observed in susceptibility (for all stoichiometries) was only observed for some samples in the specific heat. All transitions appear second order, with molar entropies much less than R, suggesting that the magnetic moments are small even in the antiferromagnetic phases. Comparison with recent resistance measurements^2 show that T_A-P is also a metal-insulator boundary for x>0.5, while the low temperature WF-A phase boundary extends above x=0.5 into the metallic phase. *Supported in part by NSF Grants DMR-9222986, EHR-9108764 and DMR-9300507.

  20. Polarized gravitational waves from cosmological phase transitions

    NASA Astrophysics Data System (ADS)

    Kisslinger, Leonard; Kahniashvili, Tina

    2015-08-01

    We estimate the degree of circular polarization for the gravitational waves generated during the electroweak and QCD phase transitions from the kinetic and magnetic helicity generated by bubble collisions during those cosmological phase transitions.

  1. Metal-insulator transitions, structural and microstructural evolution of RNiO{sub 3} (R = Sm, Eu, Gd, Dy, Ho, Y) perovskites: Evidence for room-temperature charge disproportionation in monoclinic HoNiO{sub 3} and YNiO{sub 3}

    SciTech Connect

    Alonso, J.A.; Martinez-Lope, M.J.; Casais, M.T.; Arangda, M.A.G.; Fernandez-Diaz, M.T.

    1999-05-26

    RNiO{sub 3} nickelates have been prepared under high oxygen pressure (R = Sm, Eu, Gd) or high hydrostatic pressure (R = Dy, Ho, Y) in the presence of KClO{sub 4}. The samples have been investigated at room temperature (RT) by synchrotron X-ray powder diffraction to follow the evolution of the crystal structures and microstructures along the series. The distortion of the orthorhombic (space group Pbnm) perovskite progressively increases along the series, leading for the smallest Ho{sup 3+} and Y{sup 3+} cations to a subtle monoclinic distortion (space group P2{sub 1}/n) which implies the splitting of the Ni positions in the crystal. This symmetry was confirmed by neutron powder diffraction; the crystal structures for R = Ho and Y were refined simultaneously from RT synchrotron and neutron powder diffraction data. In both perovskites the oxygen octahedra around Ni1 and Ni2 positions are significantly distorted, suggesting the manifestation of Jahn-Teller effect, which is almost absent in the nickelates` of lighter rare earths. The very distinct mean Ni-O bond distances observed for Ni1 and Ni2 atoms at RT, in the insulating regime, suggest the presence of a charge disproportionation effect, considered as driving force for the splitting of the Ni positions. The metal-insulator (MI) transitions for RNiO{sub 3} (R = Gd, Dy, Ho, Y), above room temperature, have been characterized by DSC. The transition temperatures for Gd, Dy, Ho, and Y oxides in the heating runs are 510.7, 563.9, 572.7, and 581.9 K, respectively. The increasing rate of T{sub MI} for Dy, Ho, and Y materials is lower than that expected from the variation of T{sub MI} for the larger rare earth perovskites. This is probably related to the subtle monoclinic distortion found for Ho and Y nickelates. The high-resolution synchrotron X-ray powder patterns have revealed changes in the microstructure along the series. Powder patterns for orthorhombic RNiO{sub 3} (R = Sm, Eu, Gd, Dy) display asymmetric tails for

  2. Mott metal-insulator transition on compressible lattices.

    PubMed

    Zacharias, Mario; Bartosch, Lorenz; Garst, Markus

    2012-10-26

    The critical properties of the finite temperature Mott end point are drastically altered by a coupling to crystal elasticity, i.e., whenever it is amenable to pressure tuning. Similar as for critical piezoelectric ferroelectrics, the Ising criticality of the electronic system is preempted by an isostructural instability, and long-range shear forces suppress microscopic fluctuations. As a result, the end point is governed by Landau criticality. Its hallmark is, thus, a breakdown of Hooke's law of elasticity with a nonlinear strain-stress relation characterized by a mean-field exponent. Based on a quantitative estimate, we predict critical elasticity to dominate the temperature range ΔT*/T(c)≃8%, close to the Mott end point of κ-(BEDT-TTF)(2)X. PMID:23215206

  3. Phase transition dynamics and gravitational waves

    SciTech Connect

    Megevand, Ariel

    2009-04-20

    During a first-order phase transition, gravitational radiation is generated either by bubble collisions or by turbulence. For phase transitions which took place at the electroweak scale and beyond, the signal is expected to be within the sensitivity range of planned interferometers such as LISA or BBO. We review the generation of gravitational waves in a first-order phase transition and discuss the dependence of the spectrum on the dynamics of the phase transition.

  4. Low-voltage current noise in long quantum superconductor/insulator/normal-metal/insulator/superconductor junctions.

    SciTech Connect

    Kopnin, N. B.; Galperin, Y. M.; Vinokur, V.; Materials Science Division; Helsinki Univ. Tech.; L.D. Landau Inst. for Theoretical Physics; Univ. Oslo; A.F. Ioffe Physico-Tech. Inst. of Russian Academy of Sciences

    2007-01-01

    The current noise in long superconductor/insulator/normal-metal/insulator/superconductor junctions at low temperatures is sensitive to the population of the subgap states, which is far from equilibrium even at low bias voltages. A nonequilibrium distribution is established due to an interplay between voltage-driven interlevel Landau-Zener transitions and intralevel inelastic relaxation. The Fano factor (the ratio of the zero-frequency noise to the dc current) is enhanced drastically, being proportional to the number of times which a particle flies along the Andreev trajectory before it escapes from the level due to inelastic scattering. For weak Landau-Zener transitions, the enhancement is even larger due to a smaller dc current.

  5. Brain Performance versus Phase Transitions

    NASA Astrophysics Data System (ADS)

    Torres, Joaquín J.; Marro, J.

    2015-07-01

    We here illustrate how a well-founded study of the brain may originate in assuming analogies with phase-transition phenomena. Analyzing to what extent a weak signal endures in noisy environments, we identify the underlying mechanisms, and it results a description of how the excitability associated to (non-equilibrium) phase changes and criticality optimizes the processing of the signal. Our setting is a network of integrate-and-fire nodes in which connections are heterogeneous with rapid time-varying intensities mimicking fatigue and potentiation. Emergence then becomes quite robust against wiring topology modification—in fact, we considered from a fully connected network to the Homo sapiens connectome—showing the essential role of synaptic flickering on computations. We also suggest how to experimentally disclose significant changes during actual brain operation.

  6. Work and quantum phase transitions: quantum latency.

    PubMed

    Mascarenhas, E; Bragança, H; Dorner, R; França Santos, M; Vedral, V; Modi, K; Goold, J

    2014-06-01

    We study the physics of quantum phase transitions from the perspective of nonequilibrium thermodynamics. For first-order quantum phase transitions, we find that the average work done per quench in crossing the critical point is discontinuous. This leads us to introduce the quantum latent work in analogy with the classical latent heat of first order classical phase transitions. For second order quantum phase transitions the irreversible work is closely related to the fidelity susceptibility for weak sudden quenches of the system Hamiltonian. We demonstrate our ideas with numerical simulations of first, second, and infinite order phase transitions in various spin chain models. PMID:25019721

  7. Electric-field-induced Spontaneous Magnetization and Phase Transitions in Zigzag Boron Nitride Nanotubes

    PubMed Central

    Bai, Lang; Gu, Gangxu; Xiang, Gang; Zhang, Xi

    2015-01-01

    We demonstrate an alternative scheme for realizing spin polarizations in semiconductor nanostructures by an all-electric way. The electronic and magnetic properties of the model system, zigzag pristine boron nitride nanotubes (BNNTs), are investigated under a transverse electric field (E) through spin-polarized density functional theory calculations. As E increases, the band gap of BNNTs is reduced due to charge redistribution induced by the asymmetry of electrostatic potential energy, and BNNTs experience rich phase transitions, such as semiconductor-metal transition and nonmagnetic (NM) metal-ferromagnetic (FM) metal transitions. Electric-field-induced magnetization occurs when a sufficiently high density of states at the Fermi level in the vicinity of metal-insulator transition is reached due to the redistribution of electronic bands and charge transferring across the BNNTs. Further analysis show that the spontaneous magnetization is derived from the localized nature of the 2p states of B and N, and the ferromagnetic coupling is stabilized by Zener’s double-exchange mechanism. Our results may provide a viable way to realize spintronic devices for applications. PMID:26206393

  8. Surface polaritons of a metal-insulator-metal curved slab

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2016-09-01

    The properties of s- and p-polarized surface polariton modes propagating circumferentially around a portion of a cylindrical metal-insulator-metal structure are studied, theoretically. By using the Maxwell equations in conjunction with the Drude model for the dielectric function of the metals and applying the appropriate boundary conditions, the dispersion relations of surface waves for two types of modes, are derived and numerically solved. The effects of the slab curvature and insulator thickness on the propagation of electromagnetic modes are investigated. The differences of the s- and p-polarized surface modes are also shown.

  9. Nonequilibrium dynamics of phase transitions

    NASA Astrophysics Data System (ADS)

    Gagne, Carmen Jeanne

    2001-11-01

    Phase transitions occur in such diverse and important systems as ferromagnets, liquid crystals and the early Universe. The dynamics of phase transitions such as these have been studied for decades, but the analytical models still need a great deal of improvement before they can adequately describe all time stages and regions under the coexistence curve. Numerical studies can supplement these analytical theories, but they need to accurately describe the continuum equations that they are intended to solve. This thesis describes a method for removing the lattice- spacing and renormalization-mass dependence of Langevin simulations of phase mixing in (2 + 1)-dimensional asymmetric Ginzburg-Landau models with short-ranged interactions. Also, the spread in the order parameter near the critical value of the control parameter due to critical slowing down is used to more accurately determine this value of the control parameter in these simulations. In addition, a new method is proposed for quantifying the departure from equilibrium. The method explores the behavior of the rate of change of the momentum-integrated structure function, ΔStot( t), as it evolves in time. As an illustration, we examine a (1 + 1)-dimensional model of a stochastic Ginzburg-Landau model at varying cooling rates. We show that ΔStot(t) displays a peak which scales with cooling time-scale as t1/2q in the over-damped limit and t1/3q in the underdamped limit. The peak amplitude was found to scale with cooling time-scale as t6/5q in all viscosities studied.

  10. QCD Phase Transitions, Volume 15

    SciTech Connect

    Schaefer, T.; Shuryak, E.

    1999-03-20

    The title of the workshop, ''The QCD Phase Transitions'', in fact happened to be too narrow for its real contents. It would be more accurate to say that it was devoted to different phases of QCD and QCD-related gauge theories, with strong emphasis on discussion of the underlying non-perturbative mechanisms which manifest themselves as all those phases. Before we go to specifics, let us emphasize one important aspect of the present status of non-perturbative Quantum Field Theory in general. It remains true that its studies do not get attention proportional to the intellectual challenge they deserve, and that the theorists working on it remain very fragmented. The efforts to create Theory of Everything including Quantum Gravity have attracted the lion share of attention and young talent. Nevertheless, in the last few years there was also a tremendous progress and even some shift of attention toward emphasis on the unity of non-perturbative phenomena. For example, we have seen some efforts to connect the lessons from recent progress in Supersymmetric theories with that in QCD, as derived from phenomenology and lattice. Another example is Maldacena conjecture and related development, which connect three things together, string theory, super-gravity and the (N=4) supersymmetric gauge theory. Although the progress mentioned is remarkable by itself, if we would listen to each other more we may have chance to strengthen the field and reach better understanding of the spectacular non-perturbative physics.

  11. Dynamics of a Quantum Phase Transition

    SciTech Connect

    Zurek, Wojciech H.; Dorner, Uwe; Zoller, Peter

    2005-09-02

    We present two approaches to the dynamics of a quench-induced phase transition in the quantum Ising model. One follows the standard treatment of thermodynamic second order phase transitions but applies it to the quantum phase transitions. The other approach is quantum, and uses Landau-Zener formula for transition probabilities in avoided level crossings. We show that predictions of the two approaches of how the density of defects scales with the quench rate are compatible, and discuss the ensuing insights into the dynamics of quantum phase transitions.

  12. Phase Transition of Diluted Magnetic Semiconductor

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Lee, S. J.; Yuldashev, S. U.; Ihm, G.; Kang, T. W.

    2011-12-01

    Three types of phase transitions in diluted magnetic semiconductor, first-order, second-order and mixed-order, are found in theory. Especially the mixed type transition shows two steps transition and novel specific heat property. Specific heat properties disclose a possible meta ferromagnetic phase confirmed by the experimental qualitative result.

  13. Cloud regimes as phase transitions

    NASA Astrophysics Data System (ADS)

    Stechmann, Samuel N.; Hottovy, Scott

    2016-06-01

    Clouds are repeatedly identified as a leading source of uncertainty in future climate predictions. Of particular importance are stratocumulus clouds, which can appear as either (i) closed cells that reflect solar radiation back to space or (ii) open cells that allow solar radiation to reach the Earth's surface. Here we show that these clouds regimes -- open versus closed cells -- fit the paradigm of a phase transition. In addition, this paradigm characterizes pockets of open cells as the interface between the open- and closed-cell regimes, and it identifies shallow cumulus clouds as a regime of higher variability. This behavior can be understood using an idealized model for the dynamics of atmospheric water as a stochastic diffusion process. With this new conceptual viewpoint, ideas from statistical mechanics could potentially be used for understanding uncertainties related to clouds in the climate system and climate predictions.

  14. Mid-infrared intersubband polaritons in dispersive metal-insulator-metal resonators

    SciTech Connect

    Manceau, J.-M. Ongarello, T.; Colombelli, R.; Zanotto, S.; Sorba, L.; Tredicucci, A.; Biasiol, G.

    2014-08-25

    We demonstrate room-temperature strong coupling between a mid-infrared (λ = 9.9 μm) intersubband transition and the fundamental cavity mode of a metal-insulator-metal resonator. Patterning of the resonator surface enables surface-coupling of the radiation and introduces an energy dispersion which can be probed with angle-resolved reflectivity. In particular, the polaritonic dispersion presents an accessible energy minimum at k = 0 where—potentially—polaritons can accumulate. We also show that it is possible to maximize the coupling of photons into the polaritonic states and—simultaneously—to engineer the position of the minimum Rabi splitting at a desired value of the in-plane wavevector. This can be precisely accomplished via a simple post-processing technique. The results are confirmed using the temporal coupled mode theory formalism and their significance in the context of the strong critical coupling concept is highlighted.

  15. Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions

    SciTech Connect

    Chaudhuri, S.; Maasilta, I. J.

    2014-03-24

    We report the development of superconducting tantalum nitride (TaN{sub x}) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO{sub x} and TaO{sub x} (Cu-AlO{sub x}-Al-TaN{sub x} and Cu-TaO{sub x}-TaN{sub x}), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature T{sub C} of the TaN{sub x} film at ∼5 K down to ∼0.5 K. Numerical simulations were also performed to predict how junction parameters should be tuned to achieve electronic cooling at temperatures above 1 K.

  16. Metal-insulator quantum critical point beneath the high Tc superconducting dome

    PubMed Central

    Sebastian, Suchitra E.; Harrison, N.; Altarawneh, M. M.; Mielke, C. H.; Liang, Ruixing; Bonn, D. A.; Lonzarich, G. G.; Hardy, W. N.

    2010-01-01

    An enduring question in correlated systems concerns whether superconductivity is favored at a quantum critical point (QCP) characterized by a divergent quasiparticle effective mass. Despite such a scenario being widely postulated in high Tc cuprates and invoked to explain non-Fermi liquid transport signatures, experimental evidence is lacking for a critical divergence under the superconducting dome. We use ultrastrong magnetic fields to measure quantum oscillations in underdoped YBa2Cu3O6+x, revealing a dramatic doping-dependent upturn in quasiparticle effective mass at a critical metal-insulator transition beneath the superconducting dome. Given the location of this QCP under a plateau in Tc in addition to a postulated QCP at optimal doping, we discuss the intriguing possibility of two intersecting superconducting subdomes, each centered at a critical Fermi surface instability. PMID:20304800

  17. Phase transitions in semidefinite relaxations

    PubMed Central

    Javanmard, Adel; Montanari, Andrea; Ricci-Tersenghi, Federico

    2016-01-01

    Statistical inference problems arising within signal processing, data mining, and machine learning naturally give rise to hard combinatorial optimization problems. These problems become intractable when the dimensionality of the data is large, as is often the case for modern datasets. A popular idea is to construct convex relaxations of these combinatorial problems, which can be solved efficiently for large-scale datasets. Semidefinite programming (SDP) relaxations are among the most powerful methods in this family and are surprisingly well suited for a broad range of problems where data take the form of matrices or graphs. It has been observed several times that when the statistical noise is small enough, SDP relaxations correctly detect the underlying combinatorial structures. In this paper we develop asymptotic predictions for several detection thresholds, as well as for the estimation error above these thresholds. We study some classical SDP relaxations for statistical problems motivated by graph synchronization and community detection in networks. We map these optimization problems to statistical mechanics models with vector spins and use nonrigorous techniques from statistical mechanics to characterize the corresponding phase transitions. Our results clarify the effectiveness of SDP relaxations in solving high-dimensional statistical problems. PMID:27001856

  18. Phase transitions in semidefinite relaxations.

    PubMed

    Javanmard, Adel; Montanari, Andrea; Ricci-Tersenghi, Federico

    2016-04-19

    Statistical inference problems arising within signal processing, data mining, and machine learning naturally give rise to hard combinatorial optimization problems. These problems become intractable when the dimensionality of the data is large, as is often the case for modern datasets. A popular idea is to construct convex relaxations of these combinatorial problems, which can be solved efficiently for large-scale datasets. Semidefinite programming (SDP) relaxations are among the most powerful methods in this family and are surprisingly well suited for a broad range of problems where data take the form of matrices or graphs. It has been observed several times that when the statistical noise is small enough, SDP relaxations correctly detect the underlying combinatorial structures. In this paper we develop asymptotic predictions for several detection thresholds, as well as for the estimation error above these thresholds. We study some classical SDP relaxations for statistical problems motivated by graph synchronization and community detection in networks. We map these optimization problems to statistical mechanics models with vector spins and use nonrigorous techniques from statistical mechanics to characterize the corresponding phase transitions. Our results clarify the effectiveness of SDP relaxations in solving high-dimensional statistical problems. PMID:27001856

  19. Metal-insulator-metal waveguides for particle trapping and separation.

    PubMed

    Khan, Saara A; Chang, Chia-Ming; Zaidi, Zain; Shin, Wonseok; Shi, Yu; Ellerbee Bowden, Audrey K; Solgaard, Olav

    2016-06-21

    Optical particle trapping and separation are essential techniques in the fields of biology and chemistry. In many applications, it is important to identify passive separation techniques that only rely on intrinsic forces in a system with a fixed device geometry. We present a dual-waveguide sorter that utilizes the loss of metal-insulator-metal (MIM) waveguides for completely passive particle trapping and separation and is created using a unique angle sidewall deposition process. Our experiments show that an inner Au-Si3N4-Au waveguide is able to trap particles within the propagation distance of its dominant modes and release the particles into an outer Au-H2O-Au waveguide. The outer waveguide then propels the particles and separates them by size. The separation results are accurately modeled by a first-principles, analytical model. PMID:27216706

  20. Graphene oxide-based flexible metal-insulator-metal capacitors

    NASA Astrophysics Data System (ADS)

    Bag, A.; Hota, M. K.; Mallik, S.; Maiti, C. K.

    2013-05-01

    This work explores the fabrication of graphene oxide (GO)-based metal-insulator-metal (MIM) capacitors on flexible polyethylene terephthalate (PET) substrates. Electrical properties are studied in detail. A high capacitance density of ˜4 fF µm-2 measured at 1 MHz and permittivity of ˜6 have been obtained. A low voltage coefficient of capacitance, VCC-α, and a low dielectric loss tangent indicate the potential of GO-based MIM capacitors for RF applications. The constant voltage stressing study has shown a high reliability against degradation up to a projected period of 10 years. Degradation in capacitance of the devices on flexible substrates has been studied by bending radius down to 1 cm even up to 6000 times of repeated bending.

  1. Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

    PubMed

    Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

    2016-06-01

    Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values. PMID:27172429

  2. Phase transitions in the web of science

    NASA Astrophysics Data System (ADS)

    Phillips, J. C.

    2015-06-01

    The Internet age is changing the structure of science, and affecting interdisciplinary interactions. Publication profiles connecting mathematics with molecular biology and condensed matter physics over the last 40 years exhibit common phase transitions indicative of the critical role played by specific interdisciplinary interactions. The strengths of the phase transitions quantify the importance of interdisciplinary interactions.

  3. Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Huang, Ting; You, Qinghu; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

    2015-12-01

    The phase transition behaviour of vanadium dioxide (VO2) with different thicknesses has been investigated by temperature-dependent optical transmittance and Raman spectra. It is found that the crystal orientation has a great effect on the metal-insulator transition (MIT) of VO2 films. The x-ray diffraction (XRD) analysis shows that the films are polycrystalline and exhibit the characteristics of the monoclinic phase. The preferential growth crystal orientation (0 2 0) is converted to the (\\bar{1} 1 1) plane with the film thickness increasing. It is believed that the (\\bar{1} 1 1) plane is the reflection of a twinned structure with (0 1 1) crystal orientation, which will lead to the arrangements of oxygen atoms and vanadium atoms deviating from the pure monoclinic structure. It is found that the highest order transition (E 3) is highly susceptible to the crystal orientation, whereas the lowest order transition (E 1) is nearly unaffected by it. The E 3 exhibits an anomalous temperature dependence with an abrupt blue-shift (˜0.5 eV) in the vicinity of the metal-insulator transition (MIT) for VO2 film with a thickness of 84 nm. The findings show that the empty {σ*} band can be driven close to the Fermi level when the (0 2 0) orientation is converted to the (\\bar{1} 1 1) orientation. Compared to the VO2 films with thicknesses of 39 and 57 nm, the E 3 decreases by 0.8 eV and the E 2 increases by about 0.1 eV at the insulator state for the VO2 film with a thickness of 84 nm. The abnormal electronic transition and the variation of energy band is likely caused by the lattice distortion and V-V dimerisation deviation from the monoclinic {{a}\\text{m}} axis.

  4. Analysis of Nuclear Quantum Phase Transitions

    SciTech Connect

    Li, Z. P.; Meng, J.; Niksic, T.; Vretenar, D.; Lalazissis, G. A.; Ring, P.

    2009-08-26

    A microscopic analysis, based on nuclear energy density functionals, is presented for shape phase transitions in Nd isotopes. Low-lying excitation spectra and transition probabilities are calculated starting from a five-dimensional Hamiltonian, with parameters determined by constrained relativistic mean-field calculations for triaxial shapes. The results reproduce available data, and show that there is an abrupt change of structure at N = 90, that corresponds to a first-order quantum phase transition between spherical and axially deformed shapes.

  5. Quantum phase transitions in disordered magnets

    NASA Astrophysics Data System (ADS)

    Nozadze, David

    We study the effects of quenched weak disorder on quantum phase transitions in disordered magnets. The presence of disorder in the system can lead to a variety of exotic phenomena, e.g., the smearing of transitions or quantum Griffiths singularities. Phase transitions are smeared if individual spatial regions can order independently of the bulk system. In paper I, we study smeared quantum phase transitions in binary alloys A1-xBx that are tuned by changing the composition x. We show that in this case the ordered phase is extended over all compositions x < 1. We also study the composition dependence of observables. In paper II, we investigate the influence of spatial disorder correlations on smeared phase transitions. As an experimental example, we demonstrate in paper III, that the composition-driven ferromagnetic-toparamagnetic quantum phase transition in Sr1-xCaxRuO3 is smeared. When individual spatial regions cannot order but fluctuate slowly, the phase transition is characterized by strong singularities in the quantum Griffiths phase. In paper IV, we develop a theory of the quantum Griffiths phases in disordered ferromagnetic metals. We show that the quantum Griffiths singularities are stronger than the usual power-law quantum Griffiths singularities in insulating magnets. In paper V, we present an efficient numerical method for studying quantum phase transitions in disordered systems with O(N) order parameter symmetry in the large-N limit. Our algorithm solves iteratively the large-N self-consistent equations for the renormalized distances from criticality. Paper VI is devoted to the study of transport properties in the quantum Griffiths phase associated with the antiferromagnetic quantum phase transition in a metal. We find unusual behavior of transport properties which is in contrast to the normal Fermi-liquid behavior.

  6. Exploring structural phase transitions of ion crystals

    PubMed Central

    Yan, L. L.; Wan, W.; Chen, L.; Zhou, F.; Gong, S. J.; Tong, X.; Feng, M.

    2016-01-01

    Phase transitions have been a research focus in many-body physics over past decades. Cold ions, under strong Coulomb repulsion, provide a repealing paradigm of exploring phase transitions in stable confinement by electromagnetic field. We demonstrate various conformations of up to sixteen laser-cooled 40Ca+ ion crystals in a home-built surface-electrode trap, where besides the usually mentioned structural phase transition from the linear to the zigzag, two additional phase transitions to more complicated two-dimensional configurations are identified. The experimental observation agrees well with the numerical simulation. Heating due to micromotion of the ions is analysed by comparison of the numerical simulation with the experimental observation. Our investigation implies very rich and complicated many-body behaviour in the trapped-ion systems and provides effective mechanism for further exploring quantum phase transitions and quantum information processing with ultracold trapped ions. PMID:26865229

  7. Universal intermediate phases of dilute electronic and molecular glasses.

    PubMed

    Phillips, J C

    2002-05-27

    Generic intermediate phases with anomalous properties exist over narrow composition ranges adjacent to connectivity transitions. Analysis of both simple classical and complex quantum percolation shows how topological concepts can be used to understand many mysterious properties of high temperature superconductors, including the remarkably similar phase diagrams of La(2-x)Sr(x)CuO4 and C60(+y). Predictions are made for novel threshold behavior of the impurity band metal-insulator transition in two dimensions. PMID:12059486

  8. Pressure-induced phase transition in pentacene

    NASA Astrophysics Data System (ADS)

    Farina, L.; Brillante, A.; Della Valle, R. G.; Venuti, E.; Amboage, M.; Syassen, K.

    2003-07-01

    We have recently studied two solid phases of bulk pentacene (polymorphs H and C) by means of lattice phonon Raman spectroscopy. The assignment, previously based on lattice dynamics calculations alone, is now verified by X-ray diffraction measurements, conclusively confirming the existence of both polymorphs. Furthermore, Raman phonon spectra indicate a pressure-induced phase transition where the polymorph C (lower density phase) transforms to the H form (higher density phase). The onset pressure for the phase transition is only 0.2 GPa. The phase change is irreversible.

  9. Topological Phase Transition between s+- and s++ Superconducting Phases from Competing Electron--Electron and Electron--Phonon Interactions

    NASA Astrophysics Data System (ADS)

    Kim, Ki-Seok; Gammag, Rayda

    2013-06-01

    We discover a topological phase transition between conventional s+- and s++ superconducting phases by tuning the ratio of electron--electron and electron--phonon coupling constants in an FeAs-type two-band structure. Proving the existence of this unexpected quantum criticality within the mean-field theory, we propose that the quantum critical point be identified with a critical spin liquid state of an ``extended'' Dirac spectrum, where critical superconducting fluctuations cause screening of charge degrees of freedom for electronic excitations, which allows spinon excitations to carry only the spin quantum number 1/2. The emergence of the critical spin liquid state at the s+--s++ superconducting quantum critical point leads us to predict a metal--insulator--metal crossover behavior in electrical resistivity above the superconducting transition temperatures as the ratio of the electron--electron and electron--phonon coupling constants is increased. In addition, we uncover that the competition between electron--electron repulsion and electron--phonon attraction gives rise to a huge enhancement of the superconducting transition temperature near the quantum critical point which is several hundreds percent larger than that of the case when only one of the two is taken into account. Our renormalization group analysis claims that this mechanism for the enhancement of the critical temperature is not limited to superconductivity but can be applied to various Fermi surface instabilities, proposing an underlying universal structure, which turns out to be essentially identical to that of a recent study [Phys. Rev. Lett. 108 (2012) 046601] on the enhancement of the Kondo temperature in the presence of Rashba spin--orbit interaction. We speculate that the existence of this possible ``deconfined'' quantum criticality can be verified not only theoretically but also experimentally, particularly, in Li2(Pd1-xPtx)3B superconductors, varying x from 0 to 1.

  10. Microscopic Description of Nuclear Quantum Phase Transitions

    SciTech Connect

    Niksic, T.; Vretenar, D.; Lalazissis, G. A.; Ring, P.

    2007-08-31

    The relativistic mean-field framework, extended to include correlations related to restoration of broken symmetries and to fluctuations of the quadrupole deformation, is applied to a study of shape transitions in Nd isotopes. It is demonstrated that the microscopic self-consistent approach, based on global effective interactions, can describe not only general features of transitions between spherical and deformed nuclei, but also the singular properties of excitation spectra and transition rates at the critical point of quantum shape phase transition.

  11. Phase transitions in QCD and string theory

    NASA Astrophysics Data System (ADS)

    Campell, Bruce A.; Ellis, John; Kalara, S.; Nanopoulos, D. V.; Olive, Keith A.

    1991-02-01

    We develop a unified effective field theory approach to the high-temperature phase transitions in QCD and string theory, incorporating winding modes (time-like Polyakov loops, vortices) as well as low-mass states (pseudoscalar mesons and glueballs, matter and dilaton supermultiplets). Anomalous scale invariance and the Z3 structure of the centre of SU(3) decree a first-order phase transition with simultaneous deconfinement and Polyakov loop condensation in QCD, whereas string vortex condensation is a second-order phase transition breaking a Z2 symmetry. We argue that vortex condensation is accompanied by a dilaton phase transition to a strong coupling regime, and comment on the possible role of soliton degrees of freedom in the high-temperature string phase. On leave of absence from the School of Physics & Astronomy, University of Minnesota, Minneapolis, Minnesota, USA.

  12. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO x

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Antonov, I. N.; Kasatkin, A. P.; Korolev, D. S.; Belov, A. I.; Mikhaylov, A. N.; Tetel'baum, D. I.

    2016-05-01

    The change of the immitance of the metal-insulator-metal memristive structures based on SiOx, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.

  13. Phase transitions and convection in icy satellites

    NASA Technical Reports Server (NTRS)

    Bercovici, D.; Schubert, G.; Reynolds, R. T.

    1986-01-01

    The effects of solid-solid phase changes on subsolidus convection in the large icy moons of the outer solar system are considered. Phase transitions affect convection via processes that distort the phase change boundary and/or influence buoyancy through thermal expansion. Linear stability analyses are carried out for ice layers with a phase change at the midplane. Two exothermic phase transitions (ice I - ice II, ice VI - ice VIII) and two endothermic transitions (ice I - ice III, ice II - ice V) are considered. For the exothermic cases, the phase change can either impede or enhance whole-layer convection. For the endothermic cases, the phse change always inhibits whole-layer convective overturn and tends to enforce two-layer convection. These results play some constraints on possible models of icy satellite evolution and structure.

  14. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE PAGESBeta

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more » by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  15. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  16. Nanoengineering strategies for metal-insulator-metal electrostatic nanocapacitors.

    PubMed

    Haspert, Lauren C; Lee, Sang Bok; Rubloff, Gary W

    2012-04-24

    Nanostructures can improve the performance of electrical energy storage devices. Recently, metal-insulator-metal (MIM) electrostatic capacitors fabricated in a three-dimensional cylindrical nanotemplate of anodized aluminum oxide (AAO) porous film have shown profound increase in device capacitance (100× or more) over planar structures. However, inherent asperities at the top of the nanostructure template cause locally high field strengths and lead to low breakdown voltage. This severely limits the usable voltage, the associated energy density (1/2 CV(2)), and thus the operational charge-discharge window of the device. We describe an electrochemical technique, complementary to the self-assembled template pore formation process in the AAO film, that provides nanoengineered topographies with significantly reduced local electric field concentrations, enabling breakdown fields up to 2.5× higher (to >10 MV/cm) while reducing leakage current densities by 1 order of magnitude (to ∼10(-10) A/cm(2)). In addition, we consider and optimize the AAO template and nanopore dimensions, increasing the capacitance per planar unit area by another 20%. As a result, the MIM nanocapacitor devices achieve an energy density of ∼1.5 Wh/kg--the highest reported. PMID:22394362

  17. Metal-Insulator Photocathode Heterojunction for Directed Electron Emission

    SciTech Connect

    Droubay, Timothy C.; Chambers, Scott A.; Joly, Alan G.; Hess, Wayne P.; Nemeth, Karoly; Harkay, Katherine C.; Spentzouris, Linda

    2014-02-14

    New photocathode materials capable of producing intense and directed electron pulses are needed for development of next generation light sources and dynamic transmission electron microscopy. Ideal photocathodes should have high photoemission quantum efficiency (QE) and be capable of delivering collimated and well-shaped pulses of consistent charge under high-field operating conditions. High-brightness and low-intrinsic emittance electron pulses have been predicted for hybrid metal-insulator photocathode designs constructed from three to four monolayer MgO films on atomically flat silver. Here we use angle-resolved photoelectron spectroscopy to confirm directional photoemission and a large increase in QE under ultraviolet laser excitation of an ultrathin MgO film on Ag(001). We observe new low-binding energy photoemission, not seen for Ag(001), and greater electron emission in the normal direction. Under 4.66 eV laser excitation, the photoemission quantum efficiency of the MgO/Ag(001) hybrid photocathode is a factor of seven greater than that for clean Ag(001).

  18. Phase transition phenomenon: A compound measure analysis

    NASA Astrophysics Data System (ADS)

    Kang, Bo Soo; Park, Chanhi; Ryu, Doojin; Song, Wonho

    2015-06-01

    This study investigates the well-documented phenomenon of phase transition in financial markets using combined information from both return and volume changes within short time intervals. We suggest a new measure for the phase transition behaviour of markets, calculated as a return distribution conditional on local variance in volume imbalance, and show that this measure successfully captures phase transition behaviour under various conditions. We analyse the intraday trade and quote dataset from the KOSPI 200 index futures, which includes detailed information on the original order size and the type of each initiating investor. We find that among these two competing factors, the submitted order size yields more explanatory power on the phenomenon of market phase transition than the investor type.

  19. Critical behaviours of contact near phase transitions

    PubMed Central

    Chen, Y.-Y.; Jiang, Y.-Z.; Guan, X.-W.; Zhou, Qi

    2014-01-01

    A central quantity of importance for ultracold atoms is contact, which measures two-body correlations at short distances in dilute systems. It appears in universal relations among thermodynamic quantities, such as large momentum tails, energy and dynamic structure factors, through the renowned Tan relations. However, a conceptual question remains open as to whether or not contact can signify phase transitions that are insensitive to short-range physics. Here we show that, near a continuous classical or quantum phase transition, contact exhibits a variety of critical behaviours, including scaling laws and critical exponents that are uniquely determined by the universality class of the phase transition, and a constant contact per particle. We also use a prototypical exactly solvable model to demonstrate these critical behaviours in one-dimensional strongly interacting fermions. Our work establishes an intrinsic connection between the universality of dilute many-body systems and universal critical phenomena near a phase transition. PMID:25346226

  20. Thermal Phase Transitions in Finite Quantum Systems

    SciTech Connect

    Dean, D.J.

    2001-10-18

    In this Proceedings, the author will describe the behavior of two different quantum-mechanical systems as a function of increasing temperature. While these systems are somewhat different, the questions addressed are very similar, namely, how does one describe transitions in phase of a finite many-body system; how does one recognize these transitions in practical calculations; and how may one obtain the order of the transition.

  1. Phase transition model for community detection

    NASA Astrophysics Data System (ADS)

    Wu, Jianshe; Lu, Rui; Jiao, Licheng; Liu, Fang; Yu, Xin; Wang, Da; Sun, Bo

    2013-03-01

    Motivated by social and biological interactions, a novel type of phase transition model is provided in order to investigate the emergence of the clustering phenomenon in networks. The model has two types of interactions: one is attractive and the other is repulsive. In each iteration, the phase of a node (or an agent) moves toward the average phase of its neighbors and moves away from the average phase of its non-neighbors. The velocities of the two types of phase transition are controlled by two parameters, respectively. It is found that the phase transition phenomenon is closely related to the topological structure of the underlying network, and thus can be applied to identify its communities and overlapping groups. By giving each node of the network a randomly generated initial phase and updating these phases by the phase transition model until they reach stability, one or two communities will be detected according to the nodes’ stable phases, confusable nodes are moved into a set named Of. By removing the detected communities and the nodes in Of, another one or two communities will be detected by an iteration of the algorithm, …. In this way, all communities and the overlapping nodes are detected. Simulations on both real-world networks and the LFR benchmark graphs have verified the efficiency of the proposed scheme.

  2. Nuclear binding near a quantum phase transition

    NASA Astrophysics Data System (ADS)

    Lee, Dean

    2016-03-01

    I review recent ab initio results by the Nuclear Lattice Effective Field Theory Collaboration showing that nature lies close to a quantum phase transition between an alpha-particle gas and nuclear liquid. I discuss the control parameter of this transition and the implications for clustering in nuclei and improving ab initio nuclear structure calculations.

  3. Phase transitions three-component superfluid

    NASA Astrophysics Data System (ADS)

    Carlstrom, Johan; Babaev, Egor

    2014-03-01

    We discuss phase transitions in three-component models of superfluidity and superconductivity. We present Monte Carlo simulations showing that for certain types of inter-component interactions, these systems exhibit novel types of first order phase transitions that are driven by spin-waves. Supported by NSF CAREER Award DMR-0955902, Knut and Alice Wallenberg Foundation through the Royal Swedish Academy of Sciences andSwedish Research Council.

  4. Persistent homology analysis of phase transitions

    NASA Astrophysics Data System (ADS)

    Donato, Irene; Gori, Matteo; Pettini, Marco; Petri, Giovanni; De Nigris, Sarah; Franzosi, Roberto; Vaccarino, Francesco

    2016-05-01

    Persistent homology analysis, a recently developed computational method in algebraic topology, is applied to the study of the phase transitions undergone by the so-called mean-field XY model and by the ϕ4 lattice model, respectively. For both models the relationship between phase transitions and the topological properties of certain submanifolds of configuration space are exactly known. It turns out that these a priori known facts are clearly retrieved by persistent homology analysis of dynamically sampled submanifolds of configuration space.

  5. Modelling of phase transitions: do it yourself

    NASA Astrophysics Data System (ADS)

    Medved', I.; Huckaby, D. A.; Trník, A.; Valovičová, L'

    2013-01-01

    We present the basics of a powerful contemporary statistical mechanical technique that can be used by students to explore first-order phase transitions by themselves and for models of their own construction. The technique is a generalization of the well-known Peierls argument and is applicable to various models on a lattice. We illustrate the technique with the help of two simple models that were recently used to simulate phase transitions on surfaces.

  6. Higgs couplings and electroweak phase transition

    NASA Astrophysics Data System (ADS)

    Katz, Andrey; Perelstein, Maxim

    2014-07-01

    We argue that extensions of the Standard Model (SM) with a strongly first-order electroweak phase transition generically predict significant deviations of the Higgs couplings to gluons, photons, and Z bosons from their SM values. Precise experimental measurements of the Higgs couplings at the LHC and at the proposed next-generation facilities will allow for a robust test of the phase transition dynamics. To illustrate this point, in this paper we focus on the scenario in which loops of a new scalar field are responsible for the first-order phase transition, and study a selection of benchmark models with various SM gauge quantum numbers of the new scalar. We find that the current LHC measurement of the Higgs coupling to gluons already excludes the possibility of a first-order phase transition induced by a scalar in a sextet, or larger, representation of the SU(3) c . Future LHC experiments (including HL-LHC) will be able to definitively probe the case when the new scalar is a color triplet. If the new scalar is not colored, an electron-positron Higgs factory, such as the proposed ILC or TLEP, would be required to test the nature of the phase transition. The extremely precise measurement of the Higgsstrahlung cross section possible at such machines will allow for a comprehensive and definitive probe of the possibility of a first-order electroweak phase transition in all models we considered, including the case when the new scalar is a pure gauge singlet.

  7. Contemporary Research of Dynamically Induced Phase Transitions

    NASA Astrophysics Data System (ADS)

    Hull, Lawrence

    2015-06-01

    Dynamically induced phase transitions in metals, within the present discussion, are those that take place within a time scale characteristic of the shock waves and any reflections or rarefactions involved in the loading structure along with associated plastic flow. Contemporary topics of interest include the influence of loading wave shape, the effect of shear produced by directionality of the loading relative to the sample dimensions and initial velocity field, and the loading duration (kinetic effects, hysteresis) on the appearance and longevity of a transformed phase. These topics often arise while considering the loading of parts of various shapes with high explosives, are typically two or three-dimensional, and are often selected because of the potential of the transformed phase to significantly modify the motion. In this paper, we look at current work on phase transitions in metals influenced by shear reported in the literature, and relate recent work conducted at Los Alamos on iron's epsilon phase transition that indicates a significant response to shear produced by reflected elastic waves. A brief discussion of criteria for the occurrence of stress induced phase transitions is provided. Closing remarks regard certain physical processes, such as fragmentation and jet formation, which may be strongly influenced by phase transitions. Supported by the DoD/DOE Joint Munitions Technology Development Program.

  8. Supercooling and phase coexistence in cosmological phase transitions

    SciTech Connect

    Megevand, Ariel; Sanchez, Alejandro D.

    2008-03-15

    Cosmological phase transitions are predicted by particle physics models, and have a variety of important cosmological consequences, which depend strongly on the dynamics of the transition. In this work we investigate in detail the general features of the development of a first-order phase transition. We find thermodynamical constraints on some quantities that determine the dynamics, namely, the latent heat, the radiation energy density, and the false-vacuum energy density. Using a simple model with a Higgs field, we study numerically the amount and duration of supercooling and the subsequent reheating and phase coexistence. We analyze the dependence of the dynamics on the different parameters of the model, namely, the energy scale, the number of degrees of freedom, and the couplings of the scalar field with bosons and fermions. We also inspect the implications for the cosmological outcomes of the phase transition.

  9. Continuous and discontinuous topological quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Roy, Bitan; Goswami, Pallab; Sau, Jay D.

    2016-07-01

    The continuous quantum phase transition between noninteracting, time-reversal symmetric topological and trivial insulators in three dimensions is described by the massless Dirac fermion. We address the stability of this quantum critical point against short range electronic interactions by using renormalization group analysis and mean field theory. For sufficiently weak interactions, we show that the nature of the direct transition remains unchanged. Beyond a critical strength of interactions we find that either (i) there is a direct first order transition between two time reversal symmetric insulators or (ii) the direct transition is eliminated by an intervening time reversal and inversion odd "axionic" insulator. We also demonstrate the existence of an interaction driven first order quantum phase transition between topological and trivial gapped states in lower dimensions.

  10. Monoclinic phases arising across thermal inter-ferroelectric phase transitions

    NASA Astrophysics Data System (ADS)

    Gu, Yijia; Xue, Fei; Lei, Shiming; Lummen, Tom T. A.; Wang, Jianjun; Gopalan, Venkatraman; Chen, Long-Qing

    2014-07-01

    Thermotropic phase boundaries (TPBs), as thermal analogs of morphotropic phase boundaries (MPBs), are associated with the thermal inter-ferroelectric phase transitions. Similar to an MPB, a TPB exhibits a characteristically flattened energy profile which favors polarization rotation, thus giving rise to a structurally bridging low-symmetry phase. We report on the kinetic process of thermal inter-ferroelectric phase transitions in BaTiO3 and KNbO3 using the phase-field method. The domain structures are found to play key roles in stabilizing the monoclinic phase. In simple domain structures, the monoclinic phase is a transient phase and cannot be stabilized into its neighboring phase regimes. However, by introducing structural inhomogeneity (orthogonal in-plane domain twins), we found that the monoclinic phase can be stabilized over a range of over 100 K across the transition. As a result, the piezoelectric properties are enhanced due to the stabilized monoclinic phase. In addition to the emergence of new piezoelectric components with monoclinic symmetry, most of the original components present in the tetragonal symmetry also show substantial enhancement with the rotation of polarization.

  11. Thermochromic phase transitions in two aromatic tetrachlorocuprates

    NASA Astrophysics Data System (ADS)

    Mostafa, M. Fareed; Abdel-Kader, M. M.; Arafat, S. S.; Kandeel, E. M.

    1991-06-01

    Bis(para-toluidinium)2 tetrachlorocuprate and bis(para-chloroanilinium)2 tetrachlorocuprate crystallize in a perovskite-related layer structure. The former crystallizes in an orthorhombic unit cell with a = 6.911 Å, b = 7.052 Å and c = 33.182 Å. It undergoes a thermochromic first order phase transition from a yellow low temperature phase to a dark orange high temperature phase at T = 300 ± 3K with a 10° thermal hysteresis. The latter compound undergoes two thermochromic transitions expressed by the relation. Orange Phase (I) rightleftarrows294 K Yellow Phase (II) rightleftarrows214K Green Phase (III). Both compounds are ferromagnetic at low temperture with exchange interactions J/k = 17.5° and 20° for the two compounds respectively.

  12. Random fields at a nonequilibrium phase transition.

    PubMed

    Barghathi, Hatem; Vojta, Thomas

    2012-10-26

    We study nonequilibrium phase transitions in the presence of disorder that locally breaks the symmetry between two equivalent macroscopic states. In low-dimensional equilibrium systems, such random-field disorder is known to have dramatic effects: it prevents spontaneous symmetry breaking and completely destroys the phase transition. In contrast, we show that the phase transition of the one-dimensional generalized contact process persists in the presence of random-field disorder. The ultraslow dynamics in the symmetry-broken phase is described by a Sinai walk of the domain walls between two different absorbing states. We discuss the generality and limitations of our theory, and we illustrate our results by large-scale Monte Carlo simulations. PMID:23215170

  13. Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Nag, Joyeeta; Ryckman, Judson D.; Hertkorn, Michael T.; Choi, Bo K.; Haglund, Richard F., Jr.; Weiss, Sharon M.

    2010-02-01

    We present an optical modulator based on a silicon ring resonator coated with vanadium-dioxide (VO2) motivated by the need for compact silicon-compatible optical switches operating at THz speeds. VO2 is a functional oxide undergoing metal-insulator transition (MIT) near 67°C, with huge changes in electrical resistivity and near-infrared transmission. The MIT can be induced thermally, optically (by ultra-fast laser excitation in less than 100 fs), and possibly with electric field. VO2 is easily deposited on silicon and its ultrafast switching properties in the near-infrared can be used to tune the effective index of ring resonators in the telecommunication frequencies instead of depending on the weak electro-optic properties of silicon. The VO2-silicon hybrid ring resonator is expected to operate at speeds up to 10 THz at low Q-factor and with shorter cavity lifetimes, thus enabling compact, faster, more robust devices. We have made ring resonator structures on SOI substrates with rings varying in diameter from 3-10 μm coupled to 5 mm-long nanotapered waveguides at separations of 200 nm. Rings were coated with 80 nm of VO2 by pulsed laser deposition. As proof-of-concept, by switching the VO2 top layer thermally, we were able to modulate the resonance frequency of the ring to match with the predictions from our FDTD simulations.

  14. Phase transitions at high pressure in tetracyanoethylene

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, R.; Deb, S. K.; Das, Amitabh; Chaplot, S. L.

    2009-11-01

    We report in situ x-ray diffraction studies in tetracyanoethylene (TCNE) at high pressure using diamond anvil cell (DAC) at Elettra synchrotron source, Trieste, Italy. Experiments were performed with both the polymorphic phases (monoclinic and cubic) of TCNE as the starting phase. While starting with monoclinic (the high temperature stable) TCNE, it was found that the Bragg peaks get broadened with increase of pressure and above 5 GPa only few broad peaks remained to be observed. On release of pressure from 6.4 GPa, when the sample started turning black, the diffraction pattern at ambient pressure corresponds to cubic, the other crystalline phase of TCNE. Results reconfirm the monoclinic to cubic transition at high pressure but via an intermediate 'disordered' phase. This settles a number of conflicting issues. TCNE represents only system, which undergoes transition from one crystalline to another crystalline phase via a 'disordered' metastable phase at high pressure. When the starting phase was cubic (the low temperature stable) no apparent phase transition was observed up to 10.8 GPa.

  15. Shaping Crystal-Crystal Phase Transitions

    NASA Astrophysics Data System (ADS)

    Du, Xiyu; van Anders, Greg; Dshemuchadse, Julia; Glotzer, Sharon

    Previous computational and experimental studies have shown self-assembled structure depends strongly on building block shape. New synthesis techniques have led to building blocks with reconfigurable shape and it has been demonstrated that building block reconfiguration can induce bulk structural reconfiguration. However, we do not understand systematically how this transition happens as a function of building block shape. Using a recently developed ``digital alchemy'' framework, we study the thermodynamics of shape-driven crystal-crystal transitions. We find examples of shape-driven bulk reconfiguration that are accompanied by first-order phase transitions, and bulk reconfiguration that occurs without any thermodynamic phase transition. Our results suggest that for well-chosen shapes and structures, there exist facile means of bulk reconfiguration, and that shape-driven bulk reconfiguration provides a viable mechanism for developing functional materials.

  16. The tetragonal-like to rutile structural phase transition in epitaxial VO2/TiO2 (001) thick films

    NASA Astrophysics Data System (ADS)

    Qiu, Hongbo; Yang, Memgmeng; Dong, Yongqi; Xu, Han; Hong, Bin; Gu, Yueliang; Yang, Yuanjun; Zou, Chongwen; Luo, Zhenlin; Gao, Chen

    2015-11-01

    A controllable metal-insulator transition (MIT) of VO2 has been highly desired due to its huge potential applications in memory storage, smart windows or optical switching devices. Recently, interfacial strain engineering has been recognized as an effective approach to tuning the MIT of epitaxial VO2 films. However, the strain-involved structural evolution during the MIT process is still not clear, which prevents comprehensively understanding and utilizing interfacial strain engineering in VO2 films. In this work, we have systematically studied the epitaxial VO2 thick films grown on TiO2 (001) single crystal substrate and the structural transition at the boundary of MIT region. By using in situ temperature-dependent high-resolution x-ray diffractions, a tetragonal-like (‘T-like’) to ‘rutile’ structural phase transition is identified during the MIT process. The room-temperature crystal phase of epitaxial VO2/TiO2(001) thick film is clarified to be tetragonal-like, neither strained-rutile phase nor monoclinic phase. The calculated atomic structure of this T-like phase VO2 resembles that of the M1 phase VO2, which has been verified by their similar Raman spectra. More, the crystal lattices of the coexisted phases in the MIT region were revealed in detail. The current findings will not only show some clues on the MIT mechanism study from the structural point of view, but also favor the interface engineering assisted VO2-based devices and applications in the future.

  17. Phase transitions in multiplicative competitive processes

    SciTech Connect

    Shimazaki, Hideaki; Niebur, Ernst

    2005-07-01

    We introduce a discrete multiplicative process as a generic model of competition. Players with different abilities successively join the game and compete for finite resources. Emergence of dominant players and evolutionary development occur as a phase transition. The competitive dynamics underlying this transition is understood from a formal analogy to statistical mechanics. The theory is applicable to bacterial competition, predicting novel population dynamics near criticality.

  18. Fingerprints of intrinsic phase separation: magnetically doped two-dimensional electron gas.

    PubMed

    Terletska, H; Dobrosavljević, V

    2011-05-01

    In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality precludes global phase separation, it may lead to various inhomogeneous states and dramatically affect transport. Here we theoretically predict the precise experimental signatures of such phase separation-driven metal-insulator transitions. We show that anomalous transport is expected in an intermediate regime around the transition, displaying very strong temperature and magnetic field dependence but very weak density dependence. Our predictions find striking agreement with recent experiments on Mn-doped CdTe quantum wells, a system where we identify the microscopic origin for intrinsic phase separation. PMID:21635108

  19. Friction forces on phase transition fronts

    SciTech Connect

    Mégevand, Ariel

    2013-07-01

    In cosmological first-order phase transitions, the microscopic interaction of the phase transition fronts with non-equilibrium plasma particles manifests itself macroscopically as friction forces. In general, it is a nontrivial problem to compute these forces, and only two limits have been studied, namely, that of very slow walls and, more recently, ultra-relativistic walls which run away. In this paper we consider ultra-relativistic velocities and show that stationary solutions still exist when the parameters allow the existence of runaway walls. Hence, we discuss the necessary and sufficient conditions for the fronts to actually run away. We also propose a phenomenological model for the friction, which interpolates between the non-relativistic and ultra-relativistic values. Thus, the friction depends on two friction coefficients which can be calculated for specific models. We then study the velocity of phase transition fronts as a function of the friction parameters, the thermodynamic parameters, and the amount of supercooling.

  20. Quantum phase transitions with dynamical flavors

    NASA Astrophysics Data System (ADS)

    Bea, Yago; Jokela, Niko; Ramallo, Alfonso V.

    2016-07-01

    We study the properties of a D6-brane probe in the Aharony-Bergman-Jafferis-Maldacena (ABJM) background with smeared massless dynamical quarks in the Veneziano limit. Working at zero temperature and nonvanishing charge density, we show that the system undergoes a quantum phase transition in which the topology of the brane embedding changes from a black hole to a Minkowski embedding. In the unflavored background the phase transition is of second order and takes place when the charge density vanishes. We determine the corresponding critical exponents and show that the scaling behavior near the quantum critical point has multiplicative logarithmic corrections. In the background with dynamical quarks the phase transition is of first order and occurs at nonzero charge density. In this case we compute the discontinuity of several physical quantities as functions of the number Nf of unquenched quarks of the background.

  1. Late-time cosmological phase transitions

    SciTech Connect

    Schramm, D.N. Fermi National Accelerator Lab., Batavia, IL )

    1990-11-01

    It is shown that the potential galaxy formation and large-scale structure problems of objects existing at high redshifts (Z {approx gt} 5), structures existing on scales of 100M pc as well as velocity flows on such scales, and minimal microwave anisotropies ({Delta}T/T) {approx lt} 10{sup {minus}5} can be solved if the seeds needed to generate structure form in a vacuum phase transition after decoupling. It is argued that the basic physics of such a phase transition is no more exotic than that utilized in the more traditional GUT scale phase transitions, and that, just as in the GUT case, significant random gaussian fluctuations and/or topological defects can form. Scale lengths of {approximately}100M pc for large-scale structure as well as {approximately}1 M pc for galaxy formation occur naturally. Possible support for new physics that might be associated with such a late-time transition comes from the preliminary results of the SAGE solar neutrino experiment, implying neutrino flavor mixing with values similar to those required for a late-time transition. It is also noted that a see-saw model for the neutrino masses might also imply a tau neutrino mass that is an ideal hot dark matter candidate. However, in general either hot or cold dark matter can be consistent with a late-time transition. 47 refs., 2 figs.

  2. Late-time cosmological phase transitions

    NASA Technical Reports Server (NTRS)

    Schramm, David N.

    1991-01-01

    It is shown that the potential galaxy formation and large scale structure problems of objects existing at high redshifts (Z approx. greater than 5), structures existing on scales of 100 M pc as well as velocity flows on such scales, and minimal microwave anisotropies ((Delta)T/T) (approx. less than 10(exp -5)) can be solved if the seeds needed to generate structure form in a vacuum phase transition after decoupling. It is argued that the basic physics of such a phase transition is no more exotic than that utilized in the more traditional GUT scale phase transitions, and that, just as in the GUT case, significant random Gaussian fluctuations and/or topological defects can form. Scale lengths of approx. 100 M pc for large scale structure as well as approx. 1 M pc for galaxy formation occur naturally. Possible support for new physics that might be associated with such a late-time transition comes from the preliminary results of the SAGE solar neutrino experiment, implying neutrino flavor mixing with values similar to those required for a late-time transition. It is also noted that a see-saw model for the neutrino masses might also imply a tau neutrino mass that is an ideal hot dark matter candidate. However, in general either hot or cold dark matter can be consistent with a late-time transition.

  3. Shape phase transitions and critical points

    SciTech Connect

    Alonso, C. E.; Arias, J. M.; Fortunato, L.; Vitturi, A.

    2009-05-04

    We investigate different aspects connected with shape phase transitions in nuclei and the possible occurrence of dynamical symmetries at the critical points. We discuss in particular the behaviour of the neighbour odd nuclei at the vicinity of the critical points in the even nuclei. We consider both the case of the transition from the vibrational behaviour to the gamma-unstable deformation (characterized within the collective Bohr hamiltonian by the E(5) critical point symmetry) and the case of the transition from the vibrational behaviour to the stable axial deformation (characterized by the X(5) symmetry). The odd particle is assumed to be moving in the three single particle orbitals j = 1/2,3/2,5/2, a set of orbitals that is known to lead to possible supersymmetric cases. The coupling of the odd particle to the Bohr hamiltonian does lead in fact in the former case at the critical point to the E(5/12) boson-fermion dynamical symmetry. An alternative approach to the two shape transitions is based on the Interacting Boson Fermion Model. In this case suitably parametrized boson-fermion hamiltonians can describe the evolution of the odd system along the shape transitions. At the critical points both energy spectra and electromagnetic transitions were found to display characteristic patterns similar to those displayed by the even nuclei at the corresponding critical point. The behaviour of the odd nuclei can therefore be seen as necessary complementary signatures of the occurrence of the phase transitions.

  4. Network traffic behaviour near phase transition point

    NASA Astrophysics Data System (ADS)

    Lawniczak, A. T.; Tang, X.

    2006-03-01

    We explore packet traffic dynamics in a data network model near phase transition point from free flow to congestion. The model of data network is an abstraction of the Network Layer of the OSI (Open Systems Interconnect) Reference Model of packet switching networks. The Network Layer is responsible for routing packets across the network from their sources to their destinations and for control of congestion in data networks. Using the model we investigate spatio-temporal packets traffic dynamics near the phase transition point for various network connection topologies, and static and adaptive routing algorithms. We present selected simulation results and analyze them.

  5. Solid-liquid phase transition in argon

    NASA Technical Reports Server (NTRS)

    Tsang, T.; Tang, H. T.

    1978-01-01

    Starting from the Lennard-Jones interatomic potential, a modified cell theory has been used to describe the solid-liquid phase transition in argon. The cell-size variations may be evaluated by a self-consistent condition. With the inclusion of cell-size variations, the transition temperature, the solid and liquid densities, and the liquid-phase radial-distribution functions have been calculated. These ab initio results are in satisfactory agreement with molecular-dynamics calculations as well as experimental data on argon.

  6. Phase transition in loop quantum gravity

    NASA Astrophysics Data System (ADS)

    Mäkelä, Jarmo

    2016-04-01

    We point out that with a specific counting of states loop quantum gravity implies that black holes perform a phase transition at a certain characteristic temperature TC . In this phase transition the punctures of the spin network on the stretched horizon of the black hole jump, in effect, from the vacuum to the excited states. The characteristic temperature TC may be regarded as the lowest possible temperature of the hole. From the point of view of a distant observer at rest with respect to the hole, the characteristic temperature TC corresponds to the Hawking temperature of the hole.

  7. Queueing phase transition: theory of translation.

    PubMed

    Romano, M Carmen; Thiel, Marco; Stansfield, Ian; Grebogi, Celso

    2009-05-15

    We study the current of particles on a lattice, where to each site a different hopping probability has been associated and the particles can move only in one direction. We show that the queueing of the particles behind a slow site can lead to a first-order phase transition, and derive analytical expressions for the configuration of slow sites for this to happen. We apply this stochastic model to describe the translation of mRNAs. We show that the first-order phase transition, uncovered in this work, is the process responsible for the classification of the proteins having different biological functions. PMID:19519001

  8. Holographic endpoint of spatially modulated phase transition

    SciTech Connect

    Ooguri, Hirosi; Park, Chang-Soon

    2010-12-15

    In a previous paper [S. Nakamura, H. Ooguri, and C. S. Park, Phys. Rev. D 81, 044018 (2010)], we showed that the Reissner-Nordstroem black hole in the five-dimensional anti-de Sitter space coupled to the Maxwell theory with the Chern-Simons term is unstable when the Chern-Simons coupling is sufficiently large. In the dual conformal field theory, the instability suggests a spatially modulated phase transition. In this paper, we construct and analyze nonlinear solutions which describe the endpoint of this phase transition. In the limit where the Chern-Simons coupling is large, we find that the phase transition is of the second order with the mean field critical exponent. However, the dispersion relation with the Van Hove singularity enhances quantum corrections in the bulk, and we argue that this changes the order of the phase transition from the second to the first. We compute linear response functions in the nonlinear solution and find an infinite off-diagonal DC conductivity in the new phase.

  9. Transition to turbulence in pipe flow as a phase transition

    NASA Astrophysics Data System (ADS)

    Vasudevan, Mukund; Hof, Björn

    2015-11-01

    In pipe flow, turbulence first arises in the form of localized turbulent patches called puffs. The flow undergoes a transition to sustained turbulence via spatio-temporal intermittency, with puffs splitting, decaying and merging in the background laminar flow. However, the due to mean advection of the puffs and the long timescales involved (~107 advective time units), it is not possible to study the transition in typical laboratory set-ups. So far, it has only been possible to indirectly estimate the critical point for the transition. Here, we exploit the stochastic memoryless nature of the puff decay and splitting processes to construct a pipe flow set-up, that is periodic in a statistical sense. It then becomes possible to study the flow for sufficiently long times and characterize the transition in detail. We present measurements of the turbulent fraction as a function of Reynolds number which in turn allows a direct estimate of the critical point. We present evidence that the transition has features of a phase transition of second order.

  10. On configurational weak phase transitions in graphene

    NASA Astrophysics Data System (ADS)

    Sfyris, Dimitris

    2016-07-01

    We report a study on configurational weak phase transitions for a freestanding monolayer graphene. Firstly, we characterize weak transformation neighborhoods by suitably bounding the metric components. Then, we distinguish between structural and configurational phase changes and elaborate on the second class of them. We evaluate the irreducible invariant subspaces corresponding to these phase changes and lay down symmetry-breaking as well as symmetry-preserving stretches. In the reduced bifurcation diagram, symmetry-preserving stretches are related to a turning point with a change of stability but not of symmetry. Symmetry-breaking stretches are related to a first-order weak phase transition. We evaluate symmetry-breaking stretches as well as their generating cosets. The reduced bifurcation diagram consists of three transcritical bifurcating curves which are all unstable but can be stabilized producing a subcritical bifurcation. We, also, shortly comment on the hysteretical behavior that might appear in this case.

  11. Black Hole Phase Transition in Massive Gravity

    NASA Astrophysics Data System (ADS)

    Ning, Shou-Li; Liu, Wen-Biao

    2016-07-01

    In massive gravity, some new phenomena of black hole phase transition are found. There are more than one critical points under appropriate parameter values and the Gibbs free energy near critical points also has some new properties. Moreover, the Maxwell equal area rule is also investigated and the coexistence curve of the black hole is given.

  12. Hysteresis in the phase transition of chocolate

    NASA Astrophysics Data System (ADS)

    Ren, Ruilong; Lu, Qunfeng; Lin, Sihua; Dong, Xiaoyan; Fu, Hao; Wu, Shaoyi; Wu, Minghe; Teng, Baohua

    2016-01-01

    We designed an experiment to reproduce the hysteresis phenomenon of chocolate appearing in the heating and cooling process, and then established a model to relate the solidification degree to the order parameter. Based on the Landau-Devonshire theory, our model gave a description of the hysteresis phenomenon in chocolate, which lays the foundations for the study of the phase transition behavior of chocolate.

  13. Dual condensate and QCD phase transition

    SciTech Connect

    Zhang Bo; Bruckmann, Falk; Fodor, Zoltan; Szabo, Kalman K.; Gattringer, Christof

    2011-05-23

    The dual condensate is a new QCD phase transition order parameter, which connnects confinement and chiral symmetry breaking as different mass limits. We discuss the relation between the fermion spectrum at general boundary conditions and the dual condensate and show numerical results for the latter from unquenched SU(3) lattice configurations.

  14. Theory and phenomenology of electroweak phase transitions

    NASA Astrophysics Data System (ADS)

    Patel, Hiren H.

    An open problem in cosmology is to explain the origin of baryon abundance implied by observational cosmology. Among the many proposed explanations, electroweak baryogenesis is particularly attractive in that its ingredients is discoverable by modern experiments. The analysis of the electroweak phase transition in the early universe comprises an integral component within the larger study of electroweak baryogenesis. In this work, I make a detailed investigation of the conventional analysis of the electroweak phase transition commonly found in literature, and explicitly demonstrate that results are not independent of the choice of gauge. In its place, I provide a manifestly gauge-independent method for the analysis, review sources of theoretical and numerical uncertainties, and explore avenues for further development. Next, I explore the dynamics of the electroweak phase transition in two minimal extensions of the Standard Model of particle physics. Within these simple models, I describe a novel pattern of electroweak symmetry breaking favorable for baryogenesis that can serve as a paradigm for phase transition analysis in more complicated models.

  15. Chaos: Butterflies also Generate Phase Transitions

    NASA Astrophysics Data System (ADS)

    Leplaideur, Renaud

    2015-10-01

    We exhibit examples of mixing subshifts of finite type and of continuous potentials such that there are phase transitions but the pressure is always strictly convex. More surprisingly, we show that the pressure can be analytic on some interval although there exist several equilibrium states.

  16. Application of epidemic models to phase transitions

    NASA Astrophysics Data System (ADS)

    Bilge, A. H.; Pekcan, Ö.; Gürol, M. V.

    2012-11-01

    The Susceptible-Infected-Recovered (SIR) and Susceptible-Exposed-Infected-Recovered (SEIR) models describe the spread of epidemics in a society. In the typical case, the ratio of the susceptible individuals fall from a value S 0 close to 1 to a final value Sf , while the ratio of recovered individuals rise from 0 to Rf = 1 - Sf . The sharp passage from the level zero to the level Rf allows also the modeling of phase transitions by the number of "recovered" individuals R(t) of the SIR or SEIR model. In this article, we model the sol-gel transition for polyacrylamide-sodium alginate (SA) composite with different concentrations of SA as SIR and SEIR dynamical systems by solving the corresponding differential equations numerically and we show that the phase transitions of "classical" and "percolation" types are represented, respectively, by the SEIR and SIR models.

  17. Double-Diffusive Layers and Phase Transitions

    NASA Astrophysics Data System (ADS)

    Dude, Sabine; Hansen, Ulrich

    2015-04-01

    Researching the thermal evolution of the Earth's mantle on numerical base is very challenging. During the last decade different approaches are put forward in oder to understand the picture of the today's Earth's mantle. One way is to incorporate all the known features and physics (plate tectonics, phase transitions, CMB-topography, ...) into numerical models and make them as complex (or 'complete') as possible to capture Earth's mantle processes and surface signals. Another way is, to take a step back and look at less complex models which account for single processes and their interaction and evolution. With these 'simpler' models one is able look in detail into the physical processes and dependencies on certain parameters. Since the knowledge of slab stagnation in the transitions zone of the Earth's mantle the question whether the mantle is or at least has been layered to some degree is still under debate. On this basis we address two important features that lead to layered mantle convection and may affect each other and with this the thermal evolution of the mantle. It is commonly known the main mantle mineral olivine pass through various phase changes with depth [1]. Detailed numerical studies had been carried out to ascertain the influence on convective motion and planetary evolution [2]. It is still heavily discussed whether the endothermic phase change at 660km depth can lead an isolated lower mantle. Most of the numerical studies favour a model which has phases of layering that are disrupted by catastrophic events. In the last years double-diffusive convection has also been intensively studied with regard to planetary mantle evolution such as pile formation and core-mantle boundary topography [3]. However, another striking feature still posing open questions are evolving layers self-organised from a previous non layered state. Considering a chemical component that influences the density of a fluid in addition to the temperature leads to dynamical phenomena

  18. Nonuniversal surface behavior of dynamic phase transitions.

    PubMed

    Riego, Patricia; Berger, Andreas

    2015-06-01

    We have studied the dynamic phase transition (DPT) of the kinetic Ising model in systems with surfaces within the mean-field approximation. Varying the surface exchange coupling strength J(s), the amplitude of the externally applied oscillating field h(0), and its period P, we explore the dynamic behavior of the layer-dependent magnetization and the associated DPTs. The surface phase diagram shows several features that resemble those of the equilibrium case, with an extraordinary bulk transition and a surface transition for high J(s) values, independent from the value of h(0). For low J(s), however, h(0) is found to be a crucial parameter that leads to nonuniversal surface behavior at the ordinary bulk transition point. Specifically, we observed here a bulk-supported surface DPT for high field amplitudes h(0) and correspondingly short critical periods P(c), whereas this surface transition simultaneous to the bulk one is suppressed for slow critical dynamics occurring for low values of h(0). The suppression of the DPT for low h(0) not only occurs for the topmost surface layer, but also affects a significant number of subsurface layers. We find that the key physical quantity that explains this nonuniversal behavior is the time correlation between the dynamic surface and bulk magnetizations at the bulk critical point. This time correlation has to pass a threshold value to trigger a bulk-induced DPT in the surface layers. Otherwise, dynamic phase transitions are absent at the surface in stark contrast to the equilibrium behavior of the corresponding thermodynamic Ising model. Also, we have analyzed the penetration depth of the dynamically ordered phase for the surface DPT that occurs for large J(s) values. Here we find that the penetration depth depends strongly on J(s) and behaves identically to the corresponding equilibrium Ising model. PMID:26172695

  19. The transition to the metallic state in low density hydrogen.

    PubMed

    McMinis, Jeremy; Morales, Miguel A; Ceperley, David M; Kim, Jeongnim

    2015-11-21

    Solid atomic hydrogen is one of the simplest systems to undergo a metal-insulator transition. Near the transition, the electronic degrees of freedom become strongly correlated and their description provides a difficult challenge for theoretical methods. As a result, the order and density of the phase transition are still subject to debate. In this work, we use diffusion quantum Monte Carlo to benchmark the transition between paramagnetic and anti-ferromagnetic body centered cubic atomic hydrogen in its ground state. We locate the density of the transition by computing the equation of state for these two phases and identify the phase transition order by computing the band gap near the phase transition. These benchmark results show that the phase transition is continuous and occurs at a Wigner-Seitz radius of rs = 2.27(3) a0. We compare our results to previously reported density functional theory, Hedin's GW approximation, and dynamical mean field theory results. PMID:26590549

  20. The comfortable driving model revisited: traffic phases and phase transitions

    NASA Astrophysics Data System (ADS)

    Knorr, Florian; Schreckenberg, Michael

    2013-07-01

    We study the spatiotemporal patterns resulting from different boundary conditions for a microscopic traffic model and contrast them with empirical results. By evaluating the time series of local measurements, the local traffic states are assigned to the different traffic phases of Kerner’s three-phase traffic theory. For this classification we use the rule-based FOTO-method, which provides ‘hard’ rules for this assignment. Using this approach, our analysis shows that the model is indeed able to reproduce three qualitatively different traffic phases: free flow (F), synchronized traffic (S), and wide moving jams (J). In addition, we investigate the likelihood of transitions between the three traffic phases. We show that a transition from free flow to a wide moving jam often involves an intermediate transition: first from free flow to synchronized flow and then from synchronized flow to a wide moving jam. This is supported by the fact that the so-called F → S transition (from free flow to synchronized traffic) is much more likely than a direct F → J transition. The model under consideration has a functional relationship between traffic flow and traffic density. The fundamental hypothesis of the three-phase traffic theory, however, postulates that the steady states of synchronized flow occupy a two-dimensional region in the flow-density plane. Due to the obvious discrepancy between the model investigated here and the postulate of the three-phase traffic theory, the good agreement that we found could not be expected. For a more detailed analysis, we also studied vehicle dynamics at a microscopic level and provide a comparison of real detector data with simulated data of the identical highway segment.

  1. Optical properties and solar selectivity of metal-insulator composite films

    NASA Astrophysics Data System (ADS)

    Craighead, H. G.

    1980-03-01

    The results of an experimental study of metal-insulator composite films are described. A description of the entire process of sample production, characterization, experimental examination and ultimate demonstration of an application is included. The problem considered was to measure the optical constants of metal insulator-composite materials and check the applicability of effective medium-composite materials and check the applicability of effective medium theories in predicting their optical properties. With this knowledge, there was also the goal of designing and fabricating efficient and durable solar photothermal absorber surfaces. The method used for controlled coevaporation of microscopically segregated metal-insulator composites is described. With this technique many different composites were produced; the most notable ones were Ni/Al2O3, Au/Al2O3, Au/MgO, Ag/MgO and Pt/Al2O3.

  2. Phase transitions in nonequilibrium traffic theory

    SciTech Connect

    Zhang, H.M.

    2000-02-01

    This paper uses the center difference scheme of Lax-Friedrichs to numerically solve a newly developed continuum traffic flow theory and the kinematic theory of Lighthill and Whitham, and Richards, and it studies the flow-concentration phase transitions in flow containing both shock and rarefaction waves. A homogeneous road with finite length was modeled by both theories. Numerical simulations show that both theories yield nearly identical results for two representative Riemann problems--one has a shock solution and the other a rarefaction wave solution. Their phase transition curves, however, are different: those derived from the new theory have two branches--one for acceleration flow and one for deceleration flow, whereas those derived from the LWR theory comprise a single curve--the equilibrium curve. The phase transition curves in the shock case agree well with certain experimental observations but disagree with others. This disagreement may be resolved by studying transitions among nonequilibrium states, which awaits further development of a more accurate finite difference approximation of the nonequilibrium theory.

  3. Phase transition theory of sprite halo

    NASA Astrophysics Data System (ADS)

    Hiraki, Yasutaka

    2010-04-01

    We present the phase transition theory for sprite halo using measurable lightning parameters (charge moment and discharge time) on the basis of steady state thermodynamics. A halo is located at the upper part of the tree-like structure of a sprite and is produced through electron impact excitation of neutral species under the lightning-induced electric field. We proposed in our previous studies that the occurrence criteria for halos and sprites are characterized by the above lightning parameters, and additionally, the intensity of a halo weakens rapidly with an increase in the discharge time T. We assume that this phenomenon is quite similar to the phase transition between the vapor and the liquid states of water; here the analogy is between the accelerated electrons and the water molecules. We demonstrate analytically a phase transition for a simply modeled halo based on the quasistatic theory of lightning-induced electric field. Choosing the luminosity of a halo as an order parameter, we show that it has a dependence of T-0.25 - Tc-0.25 near the critical point Tc, which is characteristic of the phase transition. Furthermore, the critical time scale Tc ≈ 5.5 ms is provided naturally from our modeling and is somewhat larger than the typical time scale of the halo luminosity in observations. We consider that this kind of formalism is useful in understanding the detailed relationship between lightning activity and occurrence of halos. We discuss this point for future observations along with the possibilities of the transition model of column and carrot structures.

  4. Grand canonical Peierls transition in In/Si(111)

    NASA Astrophysics Data System (ADS)

    Jeckelmann, Eric; Sanna, Simone; Schmidt, Wolf Gero; Speiser, Eugen; Esser, Norbert

    2016-06-01

    Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.

  5. Advanced piezoresistance of extended metal-insulator core-shell nanoparticle assemblies.

    PubMed

    Athanassiou, E K; Krumeich, F; Grass, R N; Stark, W J

    2008-10-17

    Assembled metal-insulator nanoparticles with a core-shell geometry provide access to materials containing a large number (>10(6)) of tunneling barriers. We demonstrate the production of ceramic coated metal nanoparticles exhibiting an exceptional pressure-sensitive conductivity. We further show that graphene bi- and trilayers on 20 nm copper nanoparticles are insulating in such a core-shell geometry and show a similar pressure-dependent conductivity. This demonstrates that core-shell metal-insulator assemblies offer a route to alternative sensing materials. PMID:18999701

  6. Understanding topological phase transition in monolayer transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha-Jun; Chang, K. J.

    2016-03-01

    Despite considerable interest in layered transition metal dichalcogenides (TMDs), such as M X2 with M =(Mo ,W ) and X =(S ,Se ,Te ) , the physical origin of their topological nature is still poorly understood. In the conventional view of topological phase transition (TPT), the nontrivial topology of electron bands in TMDs is caused by the band inversion between metal d - and chalcogen p -orbital bands where the former is pulled down below the latter. Here, we show that, in TMDs, the TPT is entirely different from the conventional speculation. In particular, M S2 and M S e2 exhibits the opposite behavior of TPT such that the chalcogen p -orbital band moves down below the metal d -orbital band. More interestingly, in M T e2 , the band inversion occurs between the metal d -orbital bands. Our findings cast doubts on the common view of TPT and provide clear guidelines for understanding the topological nature in new topological materials to be discovered.

  7. Topological phase transition in layered transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha-Jun; Chang, Kee Joo

    Despite considerable interests in transition metal dichalcogenides (TMDs), such as MX2 with M = (Mo, W) and X = (S, Se, Te), the physical origin of their topological nature is still in its infancy. The conventional view of topological phase transition (TPT) in TMDs is that the band inversion occurs between the metal d and chalcogen p orbital bands. More precisely, the former is pulled down below the latter. Here we introduce an explicit scheme for analyzing TPT in topological materials and find that the TPT in TMDs is different from the conventional speculation. When the 1T phase undergoes a structural transformation to the 1T' phase in monolayer MX2, the band topology changes from trivial to non-trivial, leading to the TPT. We discuss the exact role of the metal d and chalcogen p orbital bands during the TPT. Our finding would provide clear guidelines for understanding the topological nature not only in TMDs but also in other topological materials yet to be explored.

  8. Phase Transitions in Models of Bird Flocking

    NASA Astrophysics Data System (ADS)

    Christodoulidi, H.; van der Weele, K.; Antonopoulos, Ch. G.; Bountis, T.

    2014-12-01

    The aim of the present paper is to elucidate the transition from collective to random behavior exhibited by various mathematical models of bird flocking. In particular, we compare Vicsek's model [Vicsek et al., Phys. Rev. Lett. 75, 1226-1229 (1995)] with one based on topological considerations. The latter model is found to exhibit a first order phase transition from flocking to decoherence, as the "noise parameter" of the problem is increased, whereas Vicsek's model gives a second order transition. Refining the topological model in such a way that birds are influenced mostly by the birds in front of them, less by the ones at their sides and not at all by those behind them (because they do not see them), we find a behavior that lies in between the two models. Finally, we propose a novel mechanism for preserving the flock's cohesion, without imposing artificial boundary conditions or attractive forces.

  9. Phase transition to turbulence in a pipe

    NASA Astrophysics Data System (ADS)

    Goldenfeld, Nigel

    Leo Kadanoff taught us much about phase transitions, turbulence and collective behavior. Here I explore the transition to turbulence in a pipe, showing how a collective mode determines the universality class. Near the transition, turbulent puffs decay either directly or through splitting, with characteristic time-scales that exhibit a super-exponential dependence on Reynolds number. Direct numerical simulations reveal that a collective mode, a so-called zonal flow emerges at large scales, activated by anisotropic turbulent fluctuations, as represented by Reynolds stress. This zonal flow imposes a shear on the turbulent fluctuations that tends to suppress their anisotropy, leading to a Landau theory of predator-prey type, in the directed percolation universality class. Stochastic simulations of this model reproduce the functional form and phenomenology of pipe flow experiments. Talk based on work performed with Hong-Yan Shih and Tsung-Lin Hsieh. This work was partially supported by the National Science Foundation through Grant NSF-DMR-1044901.

  10. Phase transitions in soft-committee machines

    NASA Astrophysics Data System (ADS)

    Biehl, M.; Schlösser, E.; Ahr, M.

    1998-10-01

    Equilibrium statistical physics is applied to the off-line training of layered neural networks with differentiable activation functions. A first analysis of soft-committee machines with an arbitrary number (K) of hidden units and continuous weights learning a perfectly matching rule is performed. Our results are exact in the limit of high training temperatures (β → 0). For K = 2 we find a second-order phase transition from unspecialized to specialized student configurations at a critical size P of the training set, whereas for K >= 3 the transition is first order. The limit K → ∞ can be performed analytically, the transition occurs after presenting on the order of NK/β examples. However, an unspecialized metastable state persists up to P propto NK2/β.

  11. Gravitational Waves from a Dark Phase Transition.

    PubMed

    Schwaller, Pedro

    2015-10-30

    In this work, we show that a large class of models with a composite dark sector undergo a strong first order phase transition in the early Universe, which could lead to a detectable gravitational wave signal. We summarize the basic conditions for a strong first order phase transition for SU(N) dark sectors with n_{f} flavors, calculate the gravitational wave spectrum and show that, depending on the dark confinement scale, it can be detected at eLISA or in pulsar timing array experiments. The gravitational wave signal provides a unique test of the gravitational interactions of a dark sector, and we discuss the complementarity with conventional searches for new dark sectors. The discussion includes the twin Higgs and strongly interacting massive particle models as well as symmetric and asymmetric composite dark matter scenarios. PMID:26565451

  12. Phase transition in the countdown problem.

    PubMed

    Lacasa, Lucas; Luque, Bartolo

    2012-07-01

    We present a combinatorial decision problem, inspired by the celebrated quiz show called Countdown, that involves the computation of a given target number T from a set of k randomly chosen integers along with a set of arithmetic operations. We find that the probability of winning the game evidences a threshold phenomenon that can be understood in the terms of an algorithmic phase transition as a function of the set size k. Numerical simulations show that such probability sharply transitions from zero to one at some critical value of the control parameter, hence separating the algorithm's parameter space in different phases. We also find that the system is maximally efficient close to the critical point. We derive analytical expressions that match the numerical results for finite size and permit us to extrapolate the behavior in the thermodynamic limit. PMID:23005354

  13. Evolution of structure during phase transitions

    SciTech Connect

    Martin, J.E.; Wilcoxon, J.P.; Anderson, R.A.

    1996-03-01

    Nanostructured materials can be synthesized by utilizing the domain growth that accompanies first-order phase separation. Structural control can be achieved by appropriately selecting the quench depth and the quench time, but in order to do this in a mindful fashion one must understand the kinetics of domain growth. The authors have completed detailed light scattering studies of the evolution of structure in both temperature- and field-quenched phase transitions in two and three dimensional systems. They have studied these systems in the quiescent state and in shear and have developed theoretical models that account for the experimental results.

  14. Structural phase transitions in monolayer molybdenum dichalcogenides

    NASA Astrophysics Data System (ADS)

    Choe, Duk-Hyun; Sung, Ha June; Chang, Kee Joo

    2015-03-01

    The recent discovery of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) has provided opportunities to develop ultimate thin channel devices. In contrast to graphene, the existence of moderate band gap and strong spin-orbit coupling gives rise to exotic electronic properties which vary with layer thickness, lattice structure, and symmetry. TMDs commonly appear in two structures with distinct symmetries, trigonal prismatic 2H and octahedral 1T phases which are semiconducting and metallic, respectively. In this work, we investigate the structural and electronic properties of monolayer molybdenum dichalcogenides (MoX2, where X = S, Se, Te) through first-principles density functional calculations. We find a tendency that the semiconducting 2H phase is more stable than the metallic 1T phase. We show that a spontaneous symmetry breaking of 1T phase leads to various distorted octahedral (1T') phases, thus inducing a metal-to-semiconductor transition. We discuss the effects of carrier doping on the structural stability and the modification of the electronic structure. This work was supported by the National Research Foundation of Korea (NRF) under Grant No. NRF-2005-0093845 and Samsung Science and Technology Foundation under Grant No. SSTFBA1401-08.

  15. Phase transitions in Nowak Sznajd opinion dynamics

    NASA Astrophysics Data System (ADS)

    Wołoszyn, Maciej; Stauffer, Dietrich; Kułakowski, Krzysztof

    2007-05-01

    The Nowak modification of the Sznajd opinion dynamics model on the square lattice assumes that with probability β the opinions flip due to mass-media advertising from down to up, and vice versa. Besides, with probability α the Sznajd rule applies that a neighbour pair agreeing in its two opinions convinces all its six neighbours of that opinion. Our Monte Carlo simulations and mean-field theory find sharp phase transitions in the parameter space.

  16. Phase Transitions in Delaunay Potts Models

    NASA Astrophysics Data System (ADS)

    Adams, Stefan; Eyers, Michael

    2016-01-01

    We establish phase transitions for certain classes of continuum Delaunay multi-type particle systems (continuum Potts models) with infinite range repulsive interaction between particles of different type. In one class of the Delaunay Potts models studied the repulsive interaction is a triangle (multi-body) interaction whereas in the second class the interaction is between pairs (edges) of the Delaunay graph. The result for the edge model is an extension of finite range results in Bertin et al. (J Stat Phys 114(1-2):79-100, 2004) for the Delaunay graph and in Georgii and Häggström (Commun Math Phys 181:507-528, 1996) for continuum Potts models to an infinite range repulsion decaying with the edge length. This is a proof of an old conjecture of Lebowitz and Lieb. The repulsive triangle interactions have infinite range as well and depend on the underlying geometry and thus are a first step towards studying phase transitions for geometry-dependent multi-body systems. Our approach involves a Delaunay random-cluster representation analogous to the Fortuin-Kasteleyn representation of the Potts model. The phase transitions manifest themselves in the percolation of the corresponding random-cluster model. Our proofs rely on recent studies (Dereudre et al. in Probab Theory Relat Fields 153:643-670, 2012) of Gibbs measures for geometry-dependent interactions.

  17. Generalized phase transitions in Lovelock gravity

    NASA Astrophysics Data System (ADS)

    Camanho, Xián O.; Edelstein, José D.; Giribet, Gastón; Gomberoff, Andrés

    2014-09-01

    We investigate a novel mechanism for phase transitions that is a distinctive feature of higher-curvature gravity theories. For definiteness, we bound ourselves to the case of Lovelock gravities. These theories are known to have several branches of asymptotically anti-de Sitter solutions. Here, extending our previous work, we show that phase transitions among some of these branches are driven by a thermalon configuration: a bubble separating two regions of different effective cosmological constants, generically hosting a black hole in the interior. Above some critical temperature, this thermalon configuration is preferred with respect to the finite-temperature anti-de Sitter space, triggering a sophisticated version of the Hawking-Page transition. After being created, the unstable bubble configuration can in general dynamically change the asymptotic cosmological constant. While this phenomenon already occurs in the case of a gravity action with square curvature terms, we point out that in the case of Lovelock theory with cubic (and higher) terms new effects appear. For instance, the theory may admit more than one type of bubble and branches that are in principle free of pathologies may also decay through the thermalon mechanism. We also find ranges of the gravitational couplings for which the theory becomes sick. These add up to previously found restrictions to impose tighter constraints on higher-curvature gravities. The results of this paper point to an intricate phase diagram which might accommodate similarly rich behavior in the dual conformal field theory side.

  18. Phase transitions in planar bilayer membranes.

    PubMed Central

    White, S H

    1975-01-01

    Temperature-dependent structural changes in planar bilayer membranes formed from glycerol monooleate (GMO) dispersed in various n-alkane solvents (C12-C17) have been studied using precise measurements of specific geometric capacitance (Cg). Cg generally increases as temperature (T) decreases. A change in the slope of Cg(T) occurs between 15 and 18 degrees C for all solvent systems examined. Measurements of the interfacial tension (gamma) of the bulk GMO-alkane dispersions against 0.1 M NaCl show that gamma generally decreases with decreasing temperature. The data can be fitted with two straight lines of different slope which intersect on the average at 17 degrees C. Pagano et al. (1973, Science (Wash. D.C.). 181:557) have shown using calorimetry that GMO has a phase transition at about 15 degrees C. Thus, the changes in Cg and gamma with temperature are likely to result from a GMO phase transition. A second structural change is observed to occur between 5 and 10 degrees C which has not been detected calorimetrically. Calculations of Cg based on various estimates of the hydrocarbon dielectric coefficient (epsilon-b) and/or hydrocarbon thickness (delta-b) leads to models for the structure of the bilayer above and below the phase transition temperature. PMID:1111634

  19. Phase Transitions in Model Active Systems

    NASA Astrophysics Data System (ADS)

    Redner, Gabriel S.

    The amazing collective behaviors of active systems such as bird flocks, schools of fish, and colonies of microorganisms have long amazed scientists and laypeople alike. Understanding the physics of such systems is challenging due to their far-from-equilibrium dynamics, as well as the extreme diversity in their ingredients, relevant time- and length-scales, and emergent phenomenology. To make progress, one can categorize active systems by the symmetries of their constituent particles, as well as how activity is expressed. In this work, we examine two categories of active systems, and explore their phase behavior in detail. First, we study systems of self-propelled spherical particles moving in two dimensions. Despite the absence of an aligning interaction, this system displays complex emergent dynamics, including phase separation into a dense active solid and dilute gas. Using simulations and analytic modeling, we quantify the phase diagram and separation kinetics. We show that this nonequilibrium phase transition is analogous to an equilibrium vapor-liquid system, with binodal and spinodal curves and a critical point. We also characterize the dense active solid phase, a unique material which exhibits the structural signatures of a crystalline solid near the crystal-hexatic transition point, as well as anomalous dynamics including superdiffusive motion on intermediate timescales. We also explore the role of interparticle attraction in this system. We demonstrate that attraction drastically changes the phase diagram, which contains two distinct phase-separated regions and is reentrant as a function of propulsion speed. We interpret this complex situation with a simple kinetic model, which builds from the observed microdynamics of individual particles to a full description of the macroscopic phase behavior. We also study active nematics, liquid crystals driven out of equilibrium by energy-dissipating active stresses. The equilibrium nematic state is unstable in these

  20. Structural phase transition in evolving networks.

    PubMed

    Kim, Sang-Woo; Noh, Jae Dong

    2009-08-01

    A network as a substrate for dynamic processes may have its own dynamics. We propose a model for networks which evolve together with diffusing particles through a coupled dynamics and investigate emerging structural property. The model consists of an undirected weighted network of fixed mean degree and randomly diffusing particles of fixed density. The weight w of an edge increases by the amount of traffics through its connecting nodes or decreases by a constant factor. Edges are removed with the probability P(rew)=1/(1+w) and replaced by new ones having w=0 at random locations. We find that the model exhibits a structural phase transition between the homogeneous phase characterized by an exponentially decaying degree distribution and the heterogeneous phase characterized by the presence of hubs. The hubs emerge as a consequence of a positive feedback between the particle and the edge dynamics. PMID:19792212

  1. Polymer physics of intracellular phase transitions

    NASA Astrophysics Data System (ADS)

    Brangwynne, Clifford P.; Tompa, Peter; Pappu, Rohit V.

    2015-11-01

    Intracellular organelles are either membrane-bound vesicles or membrane-less compartments that are made up of proteins and RNA. These organelles play key biological roles, by compartmentalizing the cell to enable spatiotemporal control of biological reactions. Recent studies suggest that membrane-less intracellular compartments are multicomponent viscous liquid droplets that form via phase separation. Proteins that have an intrinsic tendency for being conformationally heterogeneous seem to be the main drivers of liquid-liquid phase separation in the cell. These findings highlight the relevance of classical concepts from the physics of polymeric phase transitions for understanding the assembly of intracellular membrane-less compartments. However, applying these concepts is challenging, given the heteropolymeric nature of protein sequences, the complex intracellular environment, and non-equilibrium features intrinsic to cells. This provides new opportunities for adapting established theories and for the emergence of new physics.

  2. Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N.; Antonov, I. N.; Kasatkin, A. P.

    2016-05-01

    We have studied light-induced resistive switching in metal-insulator-semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

  3. Phase transitions of ɛ-HNIW in compound systems

    NASA Astrophysics Data System (ADS)

    Zhang, Jing-yuan; Guo, Xue-yong; Jiao, Qing-jie; Zhang, Pu

    2016-05-01

    The heat-induced phase transitions of ɛ-HNIW, both neat and coated with various additives used in plastic bonded explosives, were investigated using powder X-ray diffraction and differential scanning calorimetry. It was found that ɛ-HNIW, after being held at 70°C for 60h, remained in the ɛ-phase. Applying other conditions, various phase transition parameters were determined, including Tc (the critical phase transition temperature), T50 (the temperature at which 50% of the phase transition is complete) and T180 (the percentage of γ-HNIW present in samples heated to 180°C). According to the above three parameters, additives were divided into three categories: those that delay phase transition, those that raise the critical temperature and the transition rate, and those that promote the phase transition. Based on the above data, a phase transition mechanism is proposed.

  4. Quantum Phase Transitions in Antiferromagnets and Superfluids

    NASA Astrophysics Data System (ADS)

    Sachdev, Subir

    2000-03-01

    A general introduction to the non-zero temperature dynamic and transport properties of low-dimensional systems near a quantum phase transition shall be presented. Basic results will be reviewed in the context of experiments on the spin-ladder compounds. Recent large N computations (M. Vojta and S. Sachdev, Phys. Rev. Lett. 83), 3916 (1999) on an extended t-J model motivate a global scenario of the quantum phases and transitions in the high temperature superconductors, and connections will be made to numerous experiments. A universal theory (S. Sachdev, C. Buragohain, and M. Vojta, Science, in press M. Vojta, C. Buragohain, and S. Sachdev, cond- mat/9912020) of quantum impurities in spin-gap antiferromagnets near a magnetic ordering transition will be compared quantitatively to experiments on Zn doped Y Ba2 Cu3 O7 (Fong et al.), Phys. Rev. Lett. 82, 1939 (1999)

  5. The transition to chaotic phase synchronization

    NASA Astrophysics Data System (ADS)

    Mosekilde, E.; Laugesen, J. L.; Zhusubaliyev, Zh. T.

    2012-08-01

    The transition to chaotic phase synchronization for a periodically driven spiral-type chaotic oscillator is known to involve a dense set of saddle-node bifurcations. By following the synchronization transition through the cascade of period-doubling bifurcations in a forced Rössler system, this paper describes how these saddle-node bifurcations arise and how their characteristic cyclic organisation develops. We identify the cycles that are involved in the various saddle-node bifurcations and descibe how the formation of multi-layered resonance cycles in the synchronization domain is related to the torus doubling bifurcations that take place outside this domain. By examining a physiology-based model of the blood flow regulation to the individual functional unit (nephron) of the kidney we demonstrate how a similar bifurcation structure may arise in this system as a response to a periodically varying arterial blood pressure. The paper finally discusses how an alternative transition to chaotic phase synchronization may occur in the mutual synchronization of two chaotically oscillating period-doubling systems.

  6. Transitional Bubble in Periodic Flow Phase Shift

    NASA Technical Reports Server (NTRS)

    Talan, M.; Hourmouziadis, Jean

    2004-01-01

    One particular characteristic observed in unsteady shear layers is the phase shift relative to the main flow. In attached boundary layers this will have an effect both on the instantaneous skin friction and heat transfer. In separation bubbles the contribution to the drag is dominated by the pressure distribution. However, the most significant effect appears to be the phase shift on the transition process. Unsteady transition behaviour may determine the bursting of the bubble resulting in an un-recoverable full separation. An early analysis of the phase shift was performed by Stokes for the incompressible boundary layer of an oscillating wall and an oscillating main flow. An amplitude overshoot within the shear layer as well as a phase shift were observed that can be attributed to the relatively slow diffusion of viscous stresses compared to the fast change of pressure. Experiments in a low speed facility with the boundary layer of a flat plate were evaluated in respect to phase shift. A pressure distribution similar to that on the suction surface of a turbomachinery aerofoil was superimposed generating a typical transitional separation bubble. A periodically unsteady main flow in the suction type wind tunnel was introduced via a rotating flap downstream of the test section. The experiments covered a range of the three similarity parameters of momentum-loss-thickness Reynolds-number of 92 to 226 and Strouhal-number (reduced frequency) of 0.0001 to 0.0004 at the separation point, and an amplitude range up to 19 %. The free stream turbulence level was less than 1% .Upstream of the separation point the phase shift in the laminar boundary layer does not appear to be affected significantly bay either of the three parameters. The trend perpendicular to the wall is similar to the Stokes analysis. The problem scales well with the wave velocity introduced by Stokes, however, the lag of the main flow near the wall is less than indicated analytically. The separation point

  7. Exploiting phase transitions for fusion optimization problems

    NASA Astrophysics Data System (ADS)

    Svenson, Pontus

    2005-05-01

    Many optimization problems that arise in multi-target tracking and fusion applications are known to be NP-complete, ie, believed to have worst-case complexities that are exponential in problem size. Recently, many such NP-complete problems have been shown to display threshold phenomena: it is possible to define a parameter such that the probability of a random problem instance having a solution jumps from 1 to 0 at a specific value of the parameter. It is also found that the amount of resources needed to solve the problem instance peaks at the transition point. Among the problems found to display this behavior are graph coloring (aka clustering, relevant for multi-target tracking), satisfiability (which occurs in resource allocation and planning problem), and the travelling salesperson problem. Physicists studying these problems have found intriguing similarities to phase transitions in spin models of statistical mechanics. Many methods previously used to analyze spin glasses have been used to explain some of the properties of the behavior at the transition point. It turns out that the transition happens because the fitness landscape of the problem changes as the parameter is varied. Some algorithms have been introduced that exploit this knowledge of the structure of the fitness landscape. In this paper, we review some of the experimental and theoretical work on threshold phenomena in optimization problems and indicate how optimization problems from tracking and sensor resource allocation could be analyzed using these results.

  8. Phase transitions in least-effort communications

    NASA Astrophysics Data System (ADS)

    Prokopenko, Mikhail; Ay, Nihat; Obst, Oliver; Polani, Daniel

    2010-11-01

    We critically examine a model that attempts to explain the emergence of power laws (e.g., Zipf's law) in human language. The model is based on the principle of least effort in communications—specifically, the overall effort is balanced between the speaker effort and listener effort, with some trade-off. It has been shown that an information-theoretic interpretation of this principle is sufficiently rich to explain the emergence of Zipf's law in the vicinity of the transition between referentially useless systems (one signal for all referable objects) and indexical reference systems (one signal per object). The phase transition is defined in the space of communication accuracy (information content) expressed in terms of the trade-off parameter. Our study explicitly solves the continuous optimization problem, subsuming a recent, more specific result obtained within a discrete space. The obtained results contrast Zipf's law found by heuristic search (that attained only local minima) in the vicinity of the transition between referentially useless systems and indexical reference systems, with an inverse-factorial (sub-logarithmic) law found at the transition that corresponds to global minima. The inverse-factorial law is observed to be the most representative frequency distribution among optimal solutions.

  9. Phase transitions of Dirac electrons in bismuth.

    PubMed

    Li, Lu; Checkelsky, J G; Hor, Y S; Uher, C; Hebard, A F; Cava, R J; Ong, N P

    2008-07-25

    The Dirac Hamiltonian, which successfully describes relativistic fermions, applies equally well to electrons in solids with linear energy dispersion, for example, in bismuth and graphene. A characteristic of these materials is that a magnetic field less than 10 tesla suffices to force the Dirac electrons into the lowest Landau level, with resultant strong enhancement of the Coulomb interaction energy. Moreover, the Dirac electrons usually come with multiple flavors or valley degeneracy. These ingredients favor transitions to a collective state with novel quantum properties in large field. By using torque magnetometry, we have investigated the magnetization of bismuth to fields of 31 tesla. We report the observation of sharp field-induced phase transitions into a state with striking magnetic anisotropy, consistent with the breaking of the threefold valley degeneracy. PMID:18653888

  10. Dynamical phase transitions in quantum mechanics

    NASA Astrophysics Data System (ADS)

    Rotter, Ingrid

    2012-02-01

    The nucleus is described as an open many-body quantum system with a non-Hermitian Hamilton operator the eigenvalues of which are complex, in general. The eigenvalues may cross in the complex plane (exceptional points), the phases of the eigenfunctions are not rigid in approaching the crossing points and the widths bifurcate. By varying only one parameter, the eigenvalue trajectories usually avoid crossing and width bifurcation occurs at the critical value of avoided crossing. An analog spectroscopic redistribution takes place for discrete states below the particle decay threshold. By this means, a dynamical phase transition occurs in the many-level system starting at a critical value of the level density. Hence the properties of the low-lying nuclear states (described well by the shell model) and those of highly excited nuclear states (described by random ensembles) differ fundamentally from one another. The statement of Niels Bohr on the collective features of compound nucleus states at high level density is therefore not in contradiction to the shell-model description of nuclear (and atomic) states at low level density. Dynamical phase transitions are observed experimentally in different quantum mechanical systems by varying one or two parameters.

  11. Topological Phase Transition without Gap Closing

    PubMed Central

    Ezawa, Motohiko; Tanaka, Yukio; Nagaosa, Naoto

    2013-01-01

    Topological phase transition is accompanied with a change of topological numbers. According to the bulk-edge correspondence, the gap closing and the breakdown of the adiabaticity are necessary at the phase transition point to make the topological number ill-defined. However, the gap closing is not always needed. In this paper, we show that two topological distinct phases can be continuously connected without gap closing, provided the symmetry of the system changes during the process. Here we propose the generic principles how this is possible by demonstrating various examples such as 1D polyacetylene with the charge-density-wave order, 2D silicene with the antiferromagnetic order, 2D silicene or quantum well made of HgTe with superconducting proximity effects and 3D superconductor Cu doped Bi2Se3. It is argued that such an unusual phenomenon can occur when we detour around the gap closing point provided the connection of the topological numbers is lost along the detour path. PMID:24071900

  12. Finitely Generated Multifractals Can Display Phase Transitions

    NASA Astrophysics Data System (ADS)

    Huillet, Thierrey; Jeannet, Bernard

    1996-02-01

    A new class of multifractal objects (“skewed” multifractals) is introduced, the mutiplicative generator of which has a finite number of branches of different real-valued depths. Both microscopic and macroscopic scales are represented by such objects, each of these corresponding to a specific thermodynamical regime. In the “diluted” regime, the partition function Z_t is exactly renormalizable which means in the sequel, as is the case in the general multifractal theory, that t^{-1} log Z_t as a non trivial limit as t tends to infinity. In the “condensed” one the partition function converges. Details about the transition between these two regimes are given. Une nouvelle classe de “multifractales” est introduite, pour laquelle le générateur présente un nombre fini de branches de longueur variable à valeurs réelles. Les échelles macroscopiques et microscopiques sont représentables par de tels objets, chacune d'elles correspondant à un régime thermodynamique spécifique. Dans la phase “diluée”, la fonction de partition Z_t est exactement renormalisable, en ce sens (classique) que la limite quand trightarrow infty de t^{-1} log Z_t est non triviale. Dans la phase “condensée” la fonction de partition converge. Les détails thermodynamiques concernant cette transition de phase sont fournis.

  13. Phase transitions of nuclear matter beyond mean field theory

    SciTech Connect

    Tran Huu Phat; Nguyen Tuan Anh; Nguyen Van Long; Le Viet Hoa

    2007-10-15

    The Cornwall-Jackiw-Tomboulis (CJT) effective action approach is applied to study the phase transition of nuclear matter modeled by the four-nucleon interaction. It is shown that in the Hartree-Fock approximation (HFA) a first-order phase transition takes place at low temperature, whereas the phase transition is of second order at higher temperature.

  14. Jahn-Teller solitons, structural phase transitions, and phase separation.

    PubMed

    Clougherty, Dennis P

    2006-02-01

    It is demonstrated that under common conditions a molecular solid subject to Jahn-Teller interactions supports stable Q-ball-like nontopological solitons. Such solitons represent a localized lump of excess electric charge in periodic motion accompanied by a time-dependent shape distortion of a set of adjacent molecules. The motion of the distortion can correspond to a true rotation or to a pseudorotation about the symmetric shape configuration. These solitons are stable for Jahn-Teller coupling strengths below a critical value; however, as the Jahn-Teller coupling approaches this critical value, the size of the soliton diverges signaling an incipient structural phase transition. The soliton phase mimics features commonly attributed to phase separation in complex solids. PMID:16486846

  15. Jahn-Teller Solitons, Structural Phase Transitions, and Phase Separation

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis P.

    2006-02-01

    It is demonstrated that under common conditions a molecular solid subject to Jahn-Teller interactions supports stable Q-ball-like nontopological solitons. Such solitons represent a localized lump of excess electric charge in periodic motion accompanied by a time-dependent shape distortion of a set of adjacent molecules. The motion of the distortion can correspond to a true rotation or to a pseudorotation about the symmetric shape configuration. These solitons are stable for Jahn-Teller coupling strengths below a critical value; however, as the Jahn-Teller coupling approaches this critical value, the size of the soliton diverges signaling an incipient structural phase transition. The soliton phase mimics features commonly attributed to phase separation in complex solids.

  16. Phases and phase transitions in the algebraic microscopic shell model

    NASA Astrophysics Data System (ADS)

    Georgieva, A. I.; Drumev, K. P.

    2016-01-01

    We explore the dynamical symmetries of the shell model number conserving algebra, which define three types of pairing and quadrupole phases, with the aim to obtain the prevailing phase or phase transition for the real nuclear systems in a single shell. This is achieved by establishing a correspondence between each of the pairing bases with the Elliott's SU(3) basis that describes collective rotation of nuclear systems. This allows for a complete classification of the basis states of different number of particles in all the limiting cases. The probability distribution of the SU(3) basis states within theirs corresponding pairing states is also obtained. The relative strengths of dynamically symmetric quadrupole-quadrupole interaction in respect to the isoscalar, isovector and total pairing interactions define a control parameter, which estimates the importance of each term of the Hamiltonian in the correct reproduction of the experimental data for the considered nuclei.

  17. Swarms, phase transitions, and collective intelligence

    SciTech Connect

    Millonas, M.M.

    1992-12-31

    A model of the collective behavior of a large number of locally acting organisms is proposed. The model is intended to be realistic, but turns out to fit naturally into the category of connectionist models, Like all connectionist models, its properties can be divided into the categories of structure, dynamics, and learning. The space in which the organisms move is discretized, and is modeled by a lattice of nodes, or cells. Each cell hag a specified volume, and is connected to other cells in the space in a definite way. Organisms move probabilistically between local cells in this space, but with weights dependent on local morphogenic substances, or morphogens. The morphogens are in turn are effected by the passage of an organism. The evolution of the morphogens, and the corresponding constitutes of the organisms constitutes the collective behavior of the group. The generic properties of such systems are analyzed, and a number of results are obtained. The model has various types of phase transitions and self-organizing properties controlled both by the level of the noise, and other parameters. It is hoped that the present mode; might serve as a paradigmatic example of a complex cooperative system in nature. In particular this model can be used to explore the relation of phase transitions to at least three important issues encountered in artificial life. Firstly, that of emergence as complex adaptive behavior. Secondly, as an exploration of second order phase transitions in biological systems. Lastly, to derive behavioral criteria for the evolution of collective behavior in social organisms. The model is then applied to the specific case of ants moving on a lattice. The local behavior of the ants is inspired by the actual behavior observed in the laboratory, and analytic results for the collective behavior are compared to the corresponding laboratory results. Monte carlo simulations are used as illustrations.

  18. Swarms, phase transitions, and collective intelligence

    SciTech Connect

    Millonas, M.M. . Dept. of Physics)

    1992-01-01

    A model of the collective behavior of a large number of locally acting organisms is proposed. The model is intended to be realistic, but turns out to fit naturally into the category of connectionist models, Like all connectionist models, its properties can be divided into the categories of structure, dynamics, and learning. The space in which the organisms move is discretized, and is modeled by a lattice of nodes, or cells. Each cell hag a specified volume, and is connected to other cells in the space in a definite way. Organisms move probabilistically between local cells in this space, but with weights dependent on local morphogenic substances, or morphogens. The morphogens are in turn are effected by the passage of an organism. The evolution of the morphogens, and the corresponding constitutes of the organisms constitutes the collective behavior of the group. The generic properties of such systems are analyzed, and a number of results are obtained. The model has various types of phase transitions and self-organizing properties controlled both by the level of the noise, and other parameters. It is hoped that the present mode; might serve as a paradigmatic example of a complex cooperative system in nature. In particular this model can be used to explore the relation of phase transitions to at least three important issues encountered in artificial life. Firstly, that of emergence as complex adaptive behavior. Secondly, as an exploration of second order phase transitions in biological systems. Lastly, to derive behavioral criteria for the evolution of collective behavior in social organisms. The model is then applied to the specific case of ants moving on a lattice. The local behavior of the ants is inspired by the actual behavior observed in the laboratory, and analytic results for the collective behavior are compared to the corresponding laboratory results. Monte carlo simulations are used as illustrations.

  19. Is ``metamictization`` of zircon a phase transition?

    SciTech Connect

    Salje, E.K.H.; Chrosch, J.; Ewing, R.C.

    1999-07-01

    Metamictization is the transition from the crystalline to an aperiodic or amorphous state due to alpha-decay event damage from constituent radionuclides ({sup 238}U, {sup 235}U, and {sup 232}Th) and their daughters. However, this transformation in minerals is part of a larger class of radiation-induced transformations to the amorphous state that has received considerable recent attention as a result of ion- and electron-beam experiments on metals, intermetallics, simple oxides, and complex ceramics and minerals. Diffuse X-ray scattering from single crystals of metamict zircon reveals residual crystallinity even at high fluences (up to 7.2 {times} 10{sup 18} {alpha}-decay events/g). The experimental evidence does not suggest that radiation-induced amorphization is a phase transition. The observations are in good agreement with a nonconvergent, heterogeneous model of amorphization in which damage production is a random process of cascade formation and overlap at increasing fluence. Instead of an amorphization transition, the existence of a percolation transition is postulated. At the level of radiation damage near the percolation point, the heterogeneous strain broadening of X-ray diffraction profiles is reduced whereas the particle-size broadening increases. Simultaneously, the macroscopic swelling of the zircon becomes larger than the maximum expansion of the unit-cell parameters. A suitable empirical parameter that characterizes this transition is the flux, D{sub s}, at which the macroscopic expansion is identical to the maximum expansion of the crystallographic unit cell. In zircon, D{sub s} = 3.5{center_dot}10{sup 18} {alpha}-decay events/g.

  20. Evolutionary Phase Transitions in Random Environments.

    PubMed

    Skanata, Antun; Kussell, Edo

    2016-07-15

    We present analytical results for long-term growth rates of structured populations in randomly fluctuating environments, which we apply to predict how cellular response networks evolve. We show that networks which respond rapidly to a stimulus will evolve phenotypic memory exclusively under random (i.e., nonperiodic) environments. We identify the evolutionary phase diagram for simple response networks, which we show can exhibit both continuous and discontinuous transitions. Our approach enables exact analysis of diverse evolutionary systems, from viral epidemics to emergence of drug resistance. PMID:27472146

  1. Evolutionary Phase Transitions in Random Environments

    NASA Astrophysics Data System (ADS)

    Skanata, Antun; Kussell, Edo

    2016-07-01

    We present analytical results for long-term growth rates of structured populations in randomly fluctuating environments, which we apply to predict how cellular response networks evolve. We show that networks which respond rapidly to a stimulus will evolve phenotypic memory exclusively under random (i.e., nonperiodic) environments. We identify the evolutionary phase diagram for simple response networks, which we show can exhibit both continuous and discontinuous transitions. Our approach enables exact analysis of diverse evolutionary systems, from viral epidemics to emergence of drug resistance.

  2. Berry phase transition in twisted bilayer graphene

    NASA Astrophysics Data System (ADS)

    Rode, Johannes C.; Smirnov, Dmitri; Schmidt, Hennrik; Haug, Rolf J.

    2016-09-01

    The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between π and 2π is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.

  3. Quantum coherence and quantum phase transitions

    PubMed Central

    Li, Yan-Chao; Lin, Hai-Qing

    2016-01-01

    We study the connections between local quantum coherence (LQC) based on Wigner-Yanase skew information and quantum phase transitions (QPTs). When applied on the one-dimensional Hubbard, XY spin chain with three-spin interaction, and Su-Schrieffer-Heeger models, the LQC and its derivatives are used successfully to detect different types of QPTs in these spin and fermionic systems. Furthermore, the LQC is effective as the quantum discord (QD) in detecting QPTs at finite temperatures, where the entanglement has lost its effectiveness. We also demonstrate that the LQC can exhibit different behaviors in many forms compared with the QD. PMID:27193057

  4. Bound entanglement in quantum phase transitions

    SciTech Connect

    Baghbanzadeh, S.; Alipour, S.; Rezakhani, A. T.

    2010-04-15

    We investigate quantum phase transitions in which a change in the type of entanglement from bound entanglement to either free entanglement or separability may occur. In particular, we present a theoretical method to construct a class of quantum spin-chain Hamiltonians that exhibit this type of quantum criticality. Given parameter-dependent two-site reduced density matrices (with prescribed entanglement properties), we lay out a reverse construction for a compatible pure state for the whole system, as well as a class of Hamiltonians for which this pure state is a ground state. This construction is illustrated through several examples.

  5. Quantum coherence and quantum phase transitions

    NASA Astrophysics Data System (ADS)

    Li, Yan-Chao; Lin, Hai-Qing

    2016-05-01

    We study the connections between local quantum coherence (LQC) based on Wigner-Yanase skew information and quantum phase transitions (QPTs). When applied on the one-dimensional Hubbard, XY spin chain with three-spin interaction, and Su-Schrieffer-Heeger models, the LQC and its derivatives are used successfully to detect different types of QPTs in these spin and fermionic systems. Furthermore, the LQC is effective as the quantum discord (QD) in detecting QPTs at finite temperatures, where the entanglement has lost its effectiveness. We also demonstrate that the LQC can exhibit different behaviors in many forms compared with the QD.

  6. Quantum coherence and quantum phase transitions.

    PubMed

    Li, Yan-Chao; Lin, Hai-Qing

    2016-01-01

    We study the connections between local quantum coherence (LQC) based on Wigner-Yanase skew information and quantum phase transitions (QPTs). When applied on the one-dimensional Hubbard, XY spin chain with three-spin interaction, and Su-Schrieffer-Heeger models, the LQC and its derivatives are used successfully to detect different types of QPTs in these spin and fermionic systems. Furthermore, the LQC is effective as the quantum discord (QD) in detecting QPTs at finite temperatures, where the entanglement has lost its effectiveness. We also demonstrate that the LQC can exhibit different behaviors in many forms compared with the QD. PMID:27193057

  7. Phase transitions in fluids and biological systems

    NASA Astrophysics Data System (ADS)

    Sipos, Maksim

    metric to 16S rRNA metagenomic studies of 6 vertebrate gastrointestinal microbiomes and find that they assembled through a highly non-neutral process. I then consider a phase transition that may occur in nutrient-poor environments such as ocean surface waters. In these systems, I find that the experimentally observed genome streamlining, specialization and opportunism may well be generic statistical phenomena.

  8. Phase Transitions of Single Semistiff Polymer Chains

    NASA Astrophysics Data System (ADS)

    Bastolla, Ugo; Grassberger, Peter

    1997-12-01

    We study numerically a lattice model of semiflexible homopolymers with nearest neighbor (nn) attraction and energetic preference for straight joints between bonded monomers. For this we use a new Monte Carlo algorithm, the “prunedenriched Rosenbluth Method” (PERM). It is very efficient both for relatively open configurations at high temperatures and for compact and frozen-in low- T states. This allows us to study in detail the phase diagram as a function of nn attraction ɛ and stiffness x. It shows a θ-collapse line with a transition from open coils (small ɛ) to molten compact globules (large ɛ) and a freezing transition toward a state with orientational global order (large stiffness x). Qualitatively this is similar to a recently studied mean-field theory [S. Doniach, T. Garel, and H. Orland (1996), J. Chem. Phys. 105(4), 1601], but there are important differences in details. In contrast to the mean-field theory and to naive expectations, the θ-temperature increases with stiffness x. The freezing temperature increases even faster, and reaches the θ-line at a finite value of x. For even stiffer chains, the freezing transition takes place directly, without the formation of an intermediate globular state. Although being in conflict with mean-field theory, the latter had been conjectured already by Doniach et al. on the basis of heuristic arguments and of low-statistics Monte Carlo simulations. Finally, we discuss the relevance of the present model as a very crude model for protein folding.

  9. Phase transitions in Thirring’s model

    NASA Astrophysics Data System (ADS)

    Campa, Alessandro; Casetti, Lapo; Latella, Ivan; Pérez-Madrid, Agustín; Ruffo, Stefano

    2016-07-01

    In his pioneering work on negative specific heat, Walter Thirring introduced a model that is solvable in the microcanonical ensemble. Here, we give a complete description of the phase-diagram of this model in both the microcanonical and the canonical ensemble, highlighting the main features of ensemble inequivalence. In both ensembles, we find a line of first-order phase transitions which ends in a critical point. However, neither the line nor the point have the same location in the phase-diagram of the two ensembles. We also show that the microcanonical and canonical critical points can be analytically related to each other using a Landau expansion of entropy and free energy, respectively, in analogy with what has been done in (Cohen and Mukamel 2012 J. Stat. Mech. P12017). Examples of systems with certain symmetries restricting the Landau expansion have been considered in this reference, while no such restrictions are present in Thirring’s model. This leads to a phase diagram that can be seen as a prototype for what happens in systems of particles with kinematic degrees of freedom dominated by long-range interactions.

  10. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    impurities (or doping) allows further control over the electrical and optical properties of nanocrystals. However, while impurity doping in bulk semiconductors is now routine, doping of nanocrystals remains challenging. In particular, evidence for electronic doping, in which additional electrical carriers are introduced into the nanocrystals, has been very limited. Here, we adopt a new approach to electronic doping of nanocrystals. We utilize a partial cation exchange to introduce silver impurities into cadmium selenide (CdSe) and lead selenide (PbSe) nanocrystals. Results indicate that the silver-doped CdSe nanocrystals show a significant increase in fluorescence intensity, as compared to pure CdSe nanocrystals. We also observe a switching from n- to p-type doping in the silver-doped CdSe nanocrystals with increased silver amounts. Moreover, the silver-doping results in a change in the conductance of both PbSe and CdSe nanocrystals and the magnitude of this change depends on the amount of silver incorporated into the nanocrystals. In the bulk, silver chalcogenides (Ag2E, E=S, Se, and Te) possess a wide array of intriguing properties, including superionic conductivity. In addition, they undergo a reversible temperature-dependent phase transition which induces significant changes in their electronic and ionic properties. While most of these properties have been examined extensively in bulk, very few studies have been conducted at the nanoscale. We have recently developed a versatile synthesis that yields colloidal silver chalcogenide nanocrystals. Here, we study the size dependence of their phase-transition temperatures. We utilize differential scanning calorimetry and in-situ X-ray diffraction analyses to observe the phase transition in nanocrystal assemblies. We observe a significant deviation from the bulk alpha (low-temperature) to beta (high-temperature) phase-transition temperature when we reduce their size to a few nanometers. Hence, these nanocrystals provide great

  11. Gravitational waves from the electroweak phase transition

    SciTech Connect

    Leitao, Leonardo; Mégevand, Ariel; Sánchez, Alejandro D. E-mail: megevand@mdp.edu.ar

    2012-10-01

    We study the generation of gravitational waves in the electroweak phase transition. We consider a few extensions of the Standard Model, namely, the addition of scalar singlets, the minimal supersymmetric extension, and the addition of TeV fermions. For each model we consider the complete dynamics of the phase transition. In particular, we estimate the friction force acting on bubble walls, and we take into account the fact that they can propagate either as detonations or as deflagrations preceded by shock fronts, or they can run away. We compute the peak frequency and peak intensity of the gravitational radiation generated by bubble collisions and turbulence. We discuss the detectability by proposed spaceborne detectors. For the models we considered, runaway walls require significant fine tuning of the parameters, and the gravitational wave signal from bubble collisions is generally much weaker than that from turbulence. Although the predicted signal is in most cases rather low for the sensitivity of LISA, models with strongly coupled extra scalars reach this sensitivity for frequencies f ∼ 10{sup −4} Hz, and give intensities as high as h{sup 2}Ω{sub GW} ∼ 10{sup −8}.

  12. Gravitational waves from the electroweak phase transition

    NASA Astrophysics Data System (ADS)

    Leitao, Leonardo; Mégevand, Ariel; Sánchez, Alejandro D.

    2012-10-01

    We study the generation of gravitational waves in the electroweak phase transition. We consider a few extensions of the Standard Model, namely, the addition of scalar singlets, the minimal supersymmetric extension, and the addition of TeV fermions. For each model we consider the complete dynamics of the phase transition. In particular, we estimate the friction force acting on bubble walls, and we take into account the fact that they can propagate either as detonations or as deflagrations preceded by shock fronts, or they can run away. We compute the peak frequency and peak intensity of the gravitational radiation generated by bubble collisions and turbulence. We discuss the detectability by proposed spaceborne detectors. For the models we considered, runaway walls require significant fine tuning of the parameters, and the gravitational wave signal from bubble collisions is generally much weaker than that from turbulence. Although the predicted signal is in most cases rather low for the sensitivity of LISA, models with strongly coupled extra scalars reach this sensitivity for frequencies f ~ 10-4 Hz, and give intensities as high as h2ΩGW ~ 10-8.

  13. Phase transitions in supercritical explosive percolation

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Nagler, Jan; Cheng, Xueqi; Jin, Xiaolong; Shen, Huawei; Zheng, Zhiming; D'Souza, Raissa M.

    2013-05-01

    Percolation describes the sudden emergence of large-scale connectivity as edges are added to a lattice or random network. In the Bohman-Frieze-Wormald model (BFW) of percolation, edges sampled from a random graph are considered individually and either added to the graph or rejected provided that the fraction of accepted edges is never smaller than a decreasing function with asymptotic value of α, a constant. The BFW process has been studied as a model system for investigating the underlying mechanisms leading to discontinuous phase transitions in percolation. Here we focus on the regime α∈[0.6,0.95] where it is known that only one giant component, denoted C1, initially appears at the discontinuous phase transition. We show that at some point in the supercritical regime C1 stops growing and eventually a second giant component, denoted C2, emerges in a continuous percolation transition. The delay between the emergence of C1 and C2 and their asymptotic sizes both depend on the value of α and we establish by several techniques that there exists a bifurcation point αc=0.763±0.002. For α∈[0.6,αc), C1 stops growing the instant it emerges and the delay between the emergence of C1 and C2 decreases with increasing α. For α∈(αc,0.95], in contrast, C1 continues growing into the supercritical regime and the delay between the emergence of C1 and C2 increases with increasing α. As we show, αc marks the minimal delay possible between the emergence of C1 and C2 (i.e., the smallest edge density for which C2 can exist). We also establish many features of the continuous percolation of C2 including scaling exponents and relations.

  14. Does sex induce a phase transition?

    NASA Astrophysics Data System (ADS)

    de Oliveira, P. M. C.; Moss de Oliveira, S.; Stauffer, D.; Cebrat, S.; Pękalski, A.

    2008-05-01

    We discovered a dynamic phase transition induced by sexual reproduction. The dynamics is a pure Darwinian rule applied to diploid bit-strings with both fundamental ingredients to drive Darwin's evolution: (1) random mutations and crossings which act in the sense of increasing the entropy (or diversity); and (2) selection which acts in the opposite sense by limiting the entropy explosion. Selection wins this competition if mutations performed at birth are few enough, and thus the wild genotype dominates the steady-state population. By slowly increasing the average number m of mutations, however, the population suddenly undergoes a mutational degradation precisely at a transition point mc. Above this point, the “bad” alleles (represented by 1-bits) spread over the genetic pool of the population, overcoming the selection pressure. Individuals become selectively alike, and evolution stops. Only below this point, m < mc, evolutionary life is possible. The finite-size-scaling behaviour of this transition is exhibited for large enough “chromosome” lengths L, through lengthy computer simulations. One important and surprising observation is the L-independence of the transition curves, for large L. They are also independent on the population size. Another is that mc is near unity, i.e. life cannot be stable with much more than one mutation per diploid genome, independent of the chromosome length, in agreement with reality. One possible consequence is that an eventual evolutionary jump towards larger L enabling the storage of more genetic information would demand an improved DNA copying machinery in order to keep the same total number of mutations per offspring.

  15. Weyl semimetals and topological phase transitions

    NASA Astrophysics Data System (ADS)

    Murakami, Shuichi

    Weyl semimetals are semimetals with nondegenerate 3D Dirac cones in the bulk. We showed that in a transition between different Z2 topological phases, i.e. between the normal insulator (NI) and topological insulator (TI), the Weyl semimetal phase necessarily appears when inversion symmetry is broken. In the presentation we show that this scenario holds for materials with any space groups without inversion symmetry. Namely, let us take any band insulator without inversion symmetry, and assume that the gap is closed by a change of an external parameter. In such cases we found that the system runs either into (i) a Weyl semimetal or (ii) a nodal-line semimetal, but no insulator-to-insulator transition happens. This is confirmed by classifying the gap closing in terms of the space groups and the wavevector. In the case (i), the number of Weyl nodes produced at the gap closing ranges from 2 to 12 depending on the symmetry. In (ii) the nodal line is protected by mirror symmetry. In the presentation, we explain some Weyl semimetal and nodal-line semimetals which we find by using this classification. As an example, we explain our result on ab initio calculation on tellurium (Te). Tellurium consists of helical chains, and therefore lacks inversion and mirror symmetries. At high pressure the band gap of Te decreases and finally it runs into a Weyl semimetal phase, as confirmed by our ab initio calculation. In such chiral systems as tellurium, we also theoretically propose chiral transport in systems with such helical structures; namely, an orbital magnetization is induced by a current along the chiral axis, in analogy with a solenoid.

  16. Symmetry Relationship and Strain-Induced Transitions between Insulating M1 and M2 and Metallic R phases of Vanadium Dioxide

    SciTech Connect

    Tselev, A.; Luk’yanchuk, I.A.; Ivanov, I.N.; Budai, J.D.; Tischler, J.Z.; Strelcov, E.; Kolmakov, A.; Kalinin, S.V.

    2010-12-07

    The ability to synthesize VO{sub 2} in the form of single-crystalline nanobeams and nano- and microcrystals uncovered a number of previously unknown aspects of the metal-insulator transition (MIT) in this oxide. In particular, several reports demonstrated that the MIT can proceed through competition between two monoclinic (insulating) phases M1 and M2 and the tetragonal (metallic) R phase under influence of strain. The nature of such phase behavior has been not identified. Here we show that the competition between M1 and M2 phases is purely lattice-symmetry-driven. Within the framework of the Ginzburg-Landau formalism, both M phases correspond to different directions of the same four-component structural order parameter, and as a consequence, the M2 phase can appear under a small perturbation of the M1 structure such as doping or stress. We analyze the strain-controlled phase diagram of VO{sub 2} in the vicinity of the R-M2-M1 triple point using the Ginzburg-Landau formalism and identify and experimentally verify the pathways for strain-control of the transition. These insights open the door toward more systematic approaches to synthesis of VO{sub 2} nanostructures in desired phase states and to use of external fields in the control of the VO{sub 2} phase states. Additionally, we report observation of the triclinic T phase at the heterophase domain boundaries in strained quasi-two-dimensional VO{sub 2} nanoplatelets, and theoretically predict phases that have not been previously observed.

  17. High-pressure phase transitions of strontianite

    NASA Astrophysics Data System (ADS)

    Speziale, S.; Biedermann, N.; Reichmann, H. J.; Koch-Mueller, M.; Heide, G.

    2015-12-01

    Strontianite (SrCO3) is isostructural to aragonite, a major high-pressure polymorph of calcite. Thus it is a material of interest to investigate the high-pressure phase behavior of aragonite-group minerals. SrCO3 is a common component of natural carbonates and knowing its physical properties at high pressures is necessary to properly model the thermodynamic properties of complex carbonates, which are major crustal minerals but are also present in the deep Earth [Brenker et al., 2007] and control carbon cycling in the Earth's mantle. The few available high-pressure studies of SrCO3 disagree regarding both pressure stability and structure of the post-aragonite phase [Lin & Liu, 1997; Ono et al., 2005; Wang et al. 2015]. To clarify such controversies we investigated the high-pressure behavior of synthetic SrCO3 by Raman spectroscopy. Using a diamond anvil cell we compressed single-crystals or powder of strontianite (synthesized at 4 GPa and 1273 K for 24h in a multi anvil apparatus), and measured Raman scattering up to 78 GPa. SrCO3 presents a complex high-pressure behavior. We observe mode softening above 20 GPa and a phase transition at 25 - 26.9 GPa, which we interpret due to the CO3 groups rotation, in agreement with Lin & Liu [1997]. The lattice modes in the high-pressure phase show dramatic changes which may indicate a change from 9-fold coordinated Sr to a 12-fold-coordination [Ono, 2007]. Our results confirm that the high-pressure phase of strontianite is compatible with Pmmn symmetry. References Brenker, F.E. et al. (2007) Earth and Planet. Sci. Lett., 260, 1; Lin, C.-C. & Liu, L.-G. (1997) J. Phys. Chem. Solids, 58, 977; Ono, S. et al. (2005) Phys. Chem. Minerals, 32, 8; Ono, S. (2007) Phys. Chem. Minerals, 34, 215; Wang, M. et al. (2015) Phys Chem Minerals 42, 517.

  18. Quantum phase transitions in frustrated magnetic systems

    NASA Astrophysics Data System (ADS)

    Wölfle, P.; Schmitteckert, P.

    2015-07-01

    We review our recent work on quantum phase transitions in frustrated magnetic systems. In the first part a Pseudo Fermion Functional Renormalization Group (PFFRG) method is presented. By using an exact representation of spin 1/2 operators in terms of pseudofermions a quantum spin Hamiltonian may be mapped onto an interacting fermion system. For the latter an FRG treatment is employed. The results for the J1-J2 model and similar models of frustrated interaction show phase diagrams in agreement with those obtained by other methods, but give more detailed information on the nature of correlations, in particular in the non-magnetic phases. Applications of PFFRG to geometrically frustrated systems and to highly anisotropic Kitaev type models are also reported. In the second part the derivation of quantum spin models from the microscopic many-body Hamiltonian is discussed. The results for multiband systems with strong spin-orbit interaction encountered in the iridates class of compounds are shown to resolve some of the questions posed by experiment.

  19. QCD PHASE TRANSITIONS-VOLUME 15.

    SciTech Connect

    SCHAFER,T.

    1998-11-04

    The title of the workshop, ''The QCD Phase Transitions'', in fact happened to be too narrow for its real contents. It would be more accurate to say that it was devoted to different phases of QCD and QCD-related gauge theories, with strong emphasis on discussion of the underlying non-perturbative mechanisms which manifest themselves as all those phases. Before we go to specifics, let us emphasize one important aspect of the present status of non-perturbative Quantum Field Theory in general. It remains true that its studies do not get attention proportional to the intellectual challenge they deserve, and that the theorists working on it remain very fragmented. The efforts to create Theory of Everything including Quantum Gravity have attracted the lion share of attention and young talent. Nevertheless, in the last few years there was also a tremendous progress and even some shift of attention toward emphasis on the unity of non-perturbative phenomena. For example, we have seen some. efforts to connect the lessons from recent progress in Supersymmetric theories with that in QCD, as derived from phenomenology and lattice. Another example is Maldacena conjecture and related development, which connect three things together, string theory, super-gravity and the (N=4) supersymmetric gauge theory. Although the progress mentioned is remarkable by itself, if we would listen to each other more we may have chance to strengthen the field and reach better understanding of the spectacular non-perturbative physics.

  20. Phase transitions in biogenic amorphous calcium carbonate

    NASA Astrophysics Data System (ADS)

    Gong, Yutao

    Geological calcium carbonate exists in both crystalline phases and amorphous phases. Compared with crystalline calcium carbonate, such as calcite, aragonite and vaterite, the amorphous calcium carbonate (ACC) is unstable. Unlike geological calcium carbonate crystals, crystalline sea urchin spicules (99.9 wt % calcium carbonate and 0.1 wt % proteins) do not present facets. To explain this property, crystal formation via amorphous precursors was proposed in theory. And previous research reported experimental evidence of ACC on the surface of forming sea urchin spicules. By using X-ray absorption near-edge structure (XANES) spectroscopy and photoelectron emission microscopy (PEEM), we studied cross-sections of fresh sea urchin spicules at different stages (36h, 48h and 72h after fertilization) and observed the transition sequence of three mineral phases: hydrated ACC → dehydrated ACC → biogenic calcite. In addition, we unexpectedly found hydrated ACC nanoparticles that are surrounded by biogenic calcite. This observation indicates the dehydration from hydrated ACC to dehydrated ACC is inhibited, resulting in stabilization of hydrated ACC nanoparticles. We thought that the dehydration was inhibited by protein matrix components occluded within the biomineral, and we designed an in vitro assay to test the hypothesis. By utilizing XANES-PEEM, we found that SM50, the most abundant occluded matrix protein in sea urchin spicules, has the function to stabilize hydrated ACC in vitro.

  1. Phase transitions in femtosecond laser ablation

    NASA Astrophysics Data System (ADS)

    Povarnitsyn, Mikhail E.; Khishchenko, Konstantin V.; Levashov, Pavel R.

    2009-03-01

    In this study we simulate an interaction of femtosecond laser pulses (100 fs, 800 nm, 0.1-10 J/cm 2) with metal targets of Al, Au, Cu, and Ni. For analysis of laser-induced phase transitions, melting and shock waves propagation as well as material decomposition we use an Eulerian hydrocode in conjunction with a thermodynamically complete two-temperature equation of state with stable and metastable phases. Isochoric heating, material evaporation from the free surface of the target and fast propagation of the melting and shock waves are observed. On rarefaction the liquid phase becomes metastable and its lifetime is estimated using the theory of homogeneous nucleation. Mechanical spallation of the target material at high strain rates is also possible as a result of void growth and confluence. In our simulation several ablation mechanisms are taken into account but the main issue of the material is found to originate from the metastable liquid state. It can be decomposed either into a liquid-gas mixture in the vicinity of the critical point, or into droplets at high strain rates and negative pressure. The simulation results are in agreement with available experimental findings.

  2. Scaling theory of topological phase transitions.

    PubMed

    Chen, Wei

    2016-02-10

    Topologically ordered systems are characterized by topological invariants that are often calculated from the momentum space integration of a certain function that represents the curvature of the many-body state. The curvature function may be Berry curvature, Berry connection, or other quantities depending on the system. Akin to stretching a messy string to reveal the number of knots it contains, a scaling procedure is proposed for the curvature function in inversion symmetric systems, from which the topological phase transition can be identified from the flow of the driving energy parameters that control the topology (hopping, chemical potential, etc) under scaling. At an infinitesimal operation, one obtains the renormalization group (RG) equations for the driving energy parameters. A length scale defined from the curvature function near the gap-closing momentum is suggested to characterize the scale invariance at critical points and fixed points, and displays a universal critical behavior in a variety of systems examined. PMID:26790004

  3. Topological classification of dynamical phase transitions

    NASA Astrophysics Data System (ADS)

    Vajna, Szabolcs; Dóra, Balázs

    2015-04-01

    We study the nonequilibrium time evolution of a variety of one-dimensional (1D) and two-dimensional (2D) systems (including SSH model, Kitaev-chain, Haldane model, p +i p superconductor, etc.) following a sudden quench. We prove analytically that topology-changing quenches are always followed by nonanalytical temporal behavior of return rates (logarithm of the Loschmidt echo), referred to as dynamical phase transitions (DPTs) in the literature. Similarly to edge states in topological insulators, DPTs can be classified as being topologically protected or not. In 1D systems the number of topologically protected nonequilibrium time scales are determined by the difference between the initial and final winding numbers, while in 2D systems no such relation exists for the Chern numbers. The singularities of dynamical free energy in the 2D case are qualitatively different from those of the 1D case; the cusps appear only in the first time derivative.

  4. Shape phase transition in Nd-152144 isotopes

    NASA Astrophysics Data System (ADS)

    Gupta, J. B.

    2015-10-01

    Background: The Z =60 Nd-152144 isotopes span the spherical to the well-deformed collective nuclear structures. The shape phase transition at N =86 -88 and N =88 -90 is intermediate between (Ba,Ce) and (Sm,Gd). The role of the Z =64 subshell closure in this forms an interesting subject of study. Objective: To analyze these complex features of the Nd spectra and the effects of the Z =64 subshell by comparing with predictions from the microscopic dynamic pairing plus quadrupole model to explain the shape transition at N =86 -90 . Method: Empirical analysis of the Nd spectra is illustrated. The K -band structures of the collective Iπ=2+ states in Nd-152144 are described. The predicted B (E 2 ) values and the interband B (E 2 ) ratios are compared with experimental data. The potential-energy surfaces of Nd-152146 are illustrated, and the role of protons and neutrons filling the Nilsson orbits is described. Results: The different effects of the Z =64 subshell on the ground-state band and the excited vibrational bands of Nd-148146 are illustrated. Conclusion: The important role of the dynamics of the nucleus, besides the static features, is made more transparent.

  5. Phase transitions in Hidden Markov Models

    NASA Astrophysics Data System (ADS)

    Bechhoefer, John; Lathouwers, Emma

    In Hidden Markov Models (HMMs), a Markov process is not directly accessible. In the simplest case, a two-state Markov model ``emits'' one of two ``symbols'' at each time step. We can think of these symbols as noisy measurements of the underlying state. With some probability, the symbol implies that the system is in one state when it is actually in the other. The ability to judge which state the system is in sets the efficiency of a Maxwell demon that observes state fluctuations in order to extract heat from a coupled reservoir. The state-inference problem is to infer the underlying state from such noisy measurements at each time step. We show that there can be a phase transition in such measurements: for measurement error rates below a certain threshold, the inferred state always matches the observation. For higher error rates, there can be continuous or discontinuous transitions to situations where keeping a memory of past observations improves the state estimate. We can partly understand this behavior by mapping the HMM onto a 1d random-field Ising model at zero temperature. We also present more recent work that explores a larger parameter space and more states. Research funded by NSERC, Canada.

  6. Phase Transitions in Networks of Memristive Elements

    NASA Astrophysics Data System (ADS)

    Sheldon, Forrest; di Ventra, Massimiliano

    The memory features of memristive elements (resistors with memory), analogous to those found in biological synapses, have spurred the development of neuromorphic systems based on them (see, e.g.,). In turn, this requires a fundamental understanding of the collective dynamics of networks of memristive systems. Here, we study an experimentally-inspired model of disordered memristive networks in the limit of a slowly ramped voltage and show through simulations that these networks undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF ratio. We provide also a mean-field theory that reproduces many features of the transition and particularly examine the role of boundary conditions and current- vs. voltage-controlled networks. The dynamics of the mean-field theory suggest a distribution of conductance jumps which may be accessible experimentally. We finally discuss the ability of these networks to support massively-parallel computation. Work supported in part by the Center for Memory and Recording Research at UCSD.

  7. Novel Way to Characterize Metal-Insulator-Metal Devices via Nanoindentation: Preprint

    SciTech Connect

    Periasamy, P.; Packard, C. E.; O?Hayre, R. P.; Berry, J. J.; Parilla, P. A.; Ginley, D. S.

    2011-07-01

    Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is the point-contact diode where a metal tip serves as one of the metals in the MIM device. The intrinsic advantage of the point-contact configuration is that it is possible to achieve very small contact areas for the device thereby allowing very high-frequency operation. In this study, precise control over the contact area and penetration depth of an electrically conductive tip into a metal/insulator combination is achieved using a nanoindenter with in-situ electrical contact resistance measurement capabilities. A diamond probe tip, doped (degeneratively) with boron for conductivity, serves as the point contact and second 'metal' (b-Diamond) of the MIM diode. The base layer consists of Nb/Nb2O5 thin films on Si substrates and serves as the first metal /insulator combination of the MIM structure. The current-voltage response of the diodes is measured under a range of conditions to assess the validity and repeatability of the technique. Additionally, we compare the results of this technique to those acquired using a bent-wire approach and find that Nb/Nb2O5/b-Diamond MIM devices show an excellent asymmetry (60-300) and nonlinearity values (~6-9). This technique shows great promise for screening metal-insulator combinations for performance without the uncertainty that stems from a typical bent-wire point-contact.

  8. Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.

    PubMed

    Wei, Jing; Li, Heng; Zhao, Yicheng; Zhou, Wenke; Fu, Rui; Pan, Huiyue; Zhao, Qing

    2016-09-14

    The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process. Flexible devices based on this structure are also realized with excellent flexibility, which hold 85% of their initial efficiency after bending 100 times. PMID:27524362

  9. Survey of CRISM Transition Phase Observations

    NASA Astrophysics Data System (ADS)

    Seelos, F. P.; Murchie, S. L.; Choo, T. H.; McGovern, J. A.

    2006-12-01

    The Mars Reconnaissance Orbiter (MRO) transition phase extends from the end of aerobraking (08/30/06) to the start of the Primary Science Phase (PSP) (11/08/2006). Within this timeframe, the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) will acquire Mars scene observations in association with the deployment of the telescope cover (09/27/06) and during the operational checkout of the full science payload (09/29/06 - 10/05/06). The CRISM cover opening sequence includes scene observations that will be used to verify deployment and to validate the on-orbit instrument wavelength calibration. The limited cover opening observation set consists of: 1. A hyperspectral nadir scan acquired as the cover is deployed (first light) 2. A single targeted (gimbaled) hyperspectral observation in the northern plains 3. A restricted duration nadir multispectral strip The high level objectives for the science payload checkout are to obtain observations in support of in-flight wavelength, radiometric, and geometric instrument calibration, to acquire data that will contribute to the development of a first-order hyperspectral atmospheric correction, and to exercise numerous spacecraft and instrument observing modes and strategies that will be employed during PSP. The science payload checkout also enables a unique collaboration between the Mars Express OMEGA and CRISM teams, with both spectrometers slated to observe common target locations with a minimal time offset for the purpose of instrument cross-calibration. The priority CRISM observations for the payload checkout include: 1. Multispectral nadir and hyperspectral off-nadir targeted observations in support of the cross-calibration experiment with OMEGA 2. Terminator-to-terminator multispectral data acquisition demonstrating the strategy that will be used to construct the global multispectral survey map 3. Terminator-to-terminator atmospheric emission phase function (EPF) data acquisition demonstrating the observation

  10. A Direct Method for Viewing Ferromagnetic Phase Transition.

    ERIC Educational Resources Information Center

    Lue, Chin-Shan

    1994-01-01

    Provides a method, using the Rowland ring as a specimen, to observe the phase transition process directly on the oscilloscope and even extract the critical exponent of ferromagnetic transition. Includes theory, experimental setup, and results. (MVL)

  11. Pressure-induced phase transition in CrO2.

    PubMed

    Alptekin, Sebahaddin

    2015-12-01

    The ab initio constant pressure molecular dynamics technique and density functional theory with generalized gradient approximation (GGA) was used to study the pressure-induced phase transition of CrO2. The phase transition of the rutile (P42/mnm) to the orthorhombic CaCl2 (Pnnm) structure at 30 GPa was determined successfully in a constant pressure simulation. This phase transition was analyzed from total energy calculations and, from the enthalpy calculation, occurred at around 17 GPa. Structural properties such as bulk modules, lattice parameters and phase transition were compared with experimental results. The phase transition at 12 ± 3 GPa was in good agreement with experimental results, as was the phase transition from the orthorhombic CaCl2 (Pnnm) to the monoclinic (P21/c) structure also found at 35 GPa. PMID:26541468

  12. Diffuse phase transition of Fe doped lead ytterbium tantalate ceramics

    NASA Astrophysics Data System (ADS)

    Rout, Dibyaranjan; Subramanian, V.; Hariharan, K.; Sivasubramanian, V.

    2006-02-01

    The effect of different concentration of Fe on the phase transition behavior of Lead ytterbium tantalate is investigated by dielectric and differential scanning calrimetry measurements. The samples are prepared through solid state reaction method and it has been found that the sintering temperature significantly lowered when the proportion of Pb(Fe 1/2Ta 1/2)O 3 increased. It has been observed that the doping in small amounts (0≤ x≤0.2) of Fe could meliorate the dielectric and ferroelectric properties. The diffuseness in the mode of phase transition increases and the phase transition temperature decreases as a function of Fe content. It is revealed that the dielectric data and heat capacity data follow a similar trend in the variation of the mode of phase transition and phase transition temperatures. The phase transition temperature values obtained from the heat capacity measurement well agreed with the values obtained from dielectric measurement.

  13. The Roberge-Weiss phase transition and its endpoint

    NASA Astrophysics Data System (ADS)

    Kouno, Hiroaki; Sakai, Yuji; Kashiwa, Kouji; Yahiro, Masanobu

    2009-11-01

    The Roberge-Weiss (RW) phase transition in the imaginary chemical potential region is analyzed by the Polyakov-loop extended Nambu-Jona-Lasinio (PNJL) model. In the RW phase transition, the charge-conjugation symmetry is spontaneously broken, while the extended {\\mathbb Z}_{3} symmetry (the RW periodicity) is preserved. The RW transition is of second order at the endpoint. At the zero chemical potential, a crossover deconfinement transition appears as a remnant of the second-order RW phase transition at the endpoint, while the charge-conjugation symmetry is always preserved.

  14. Main phase transitions in supported lipid single-bilayer.

    PubMed

    Charrier, A; Thibaudau, F

    2005-08-01

    We have studied the phase transitions of a phospholipidic single-bilayer supported on a mica substrate by real-time temperature-controlled atomic force microscopy. We show the existence of two phase transitions in this bilayer that we attribute to two gel (L(beta))/fluid (L(alpha)) transitions, corresponding to the independent melting of each leaflet of the bilayer. The ratio of each phase with temperature and the large broadening of the transitions' widths have been interpreted through a basic thermodynamic framework in which the surface tension varies during the transitions. The experimental data can be fit with such a model using known thermodynamic parameters. PMID:15879467

  15. Gravitational waves from global second order phase transitions

    SciTech Connect

    Jr, John T. Giblin; Price, Larry R.; Siemens, Xavier; Vlcek, Brian E-mail: larryp@caltech.edu E-mail: bvlcek@uwm.edu

    2012-11-01

    Global second-order phase transitions are expected to produce scale-invariant gravitational wave spectra. In this manuscript we explore the dynamics of a symmetry-breaking phase transition using lattice simulations. We explicitly calculate the stochastic gravitational wave background produced during the transition and subsequent self-ordering phase. We comment on this signal as it compares to the scale-invariant spectrum produced during inflation.

  16. Quantum phase transition of condensed bosons in optical lattices

    SciTech Connect

    Liang Junjun; Liang, J.-Q.; Liu, W.-M.

    2003-10-01

    In this paper we study the superfluid-Mott-insulator phase transition of ultracold dilute gas of bosonic atoms in an optical lattice by means of Green function method and Bogliubov transformation as well. The superfluid-Mott-insulator phase transition condition is determined by the energy-band structure with an obvious interpretation of the transition mechanism. Moreover the superfluid phase is explained explicitly from the energy spectrum derived in terms of Bogliubov approach.

  17. Topological phase transition of a Josephson junction and its dynamics

    NASA Astrophysics Data System (ADS)

    Hutasoit, Jimmy; Marciani, Marco; Tarasinski, Brian; Beenakker, Carlo

    A Josephson junction formed by a superconducting ring interrupted by a semiconductor nanowire can realize a zero-dimensional class D topological superconductor. By coupling the Josephson junction to a ballistic wire and altering the strength of the coupling, one can drive this topological superconductor through a topological phase transition. We study the compressibility of the junction as a probe of the topological phase transition. We also study the dynamics of the phase transition by studying the current pulse injected into the wire.

  18. Phase transition of holographic entanglement entropy in massive gravity

    NASA Astrophysics Data System (ADS)

    Zeng, Xiao-Xiong; Zhang, Hongbao; Li, Li-Fang

    2016-05-01

    The phase structure of holographic entanglement entropy is studied in massive gravity for the quantum systems with finite and infinite volumes, which in the bulk is dual to calculating the minimal surface area for a black hole and black brane respectively. In the entanglement entropy-temperature plane, we find for both the black hole and black brane there is a Van der Waals-like phase transition as the case in thermal entropy-temperature plane. That is, there is a first order phase transition for the small charge and a second order phase transition at the critical charge. For the first order phase transition, the equal area law is checked and for the second order phase transition, the critical exponent of the heat capacity is obtained. All the results show that the phase structure of holographic entanglement entropy is the same as that of thermal entropy regardless of the volume of the spacetime on the boundary.

  19. Raman study of thermochromic phase transition in tungsten trioxide nanowires

    NASA Astrophysics Data System (ADS)

    Lu, Dong Yu; Chen, Jian; Chen, Huan Jun; Gong, Li; Deng, Shao Zhi; Xu, Ning Sheng; Liu, Yu Long

    2007-01-01

    Tungsten trioxide (WO3) nanowires were synthesized by thermal evaporation of tungsten powder in two steps: tungsten suboxide (WO3-x) nanowires were synthesized, and then oxidized in O2 ambient and transformed into WO3 nanowires. Raman spectroscopy was applied to study the thermochromic phase transition of one-dimensional WO3 nanowires. From the temperature dependence of the characteristic mode at 33cm-1 in WO3, the phase transition temperature was determined. It was found that the phase transition of WO3 nanowires was reversible and the phase transition temperatures were even lower than that of WO3 nanopowder.

  20. Phase transitions in a gas of anyons

    NASA Astrophysics Data System (ADS)

    MacKenzie, R.; Nebia-Rahal, F.; Paranjape, M. B.; Richer, J.

    2010-10-01

    We continue our numerical Monte Carlo simulation of a gas of closed loops on a 3 dimensional lattice, however, now in the presence of a topological term added to the action which corresponds to the total linking number between the loops. We compute the linking number using a novel approach employing certain notions from knot theory. Adding the topological term converts the particles into anyons. Interpreting the model as an effective theory that describes the 2+1-dimensional Abelian Higgs model in the asymptotic strong-coupling regime, the topological linking number simply corresponds to the addition to the action of the Chern-Simons term. The system continues to exhibit a phase transition as a function of the vortex mass as it becomes small. We find the following new results. The Chern-Simons term has no effect on the Wilson loop. On the other hand, it does effect the ’t Hooft loop of a given configuration, adding the linking number of the ’t Hooft loop with all of the dynamical vortex loops. We find the unexpected result that both the Wilson loop and the ’t Hooft loop exhibit a perimeter law even though there are no massless particles in the theory, in both phases of the theory. It should be noted that our method suffers from numerical instabilities if the coefficient of the Chern-Simons term is too large; thus, we have restricted our results to small values of this parameter. Furthermore, interpreting the lattice loop gas as an effective theory describing the Abelian Higgs model is only known to be true in the infinite coupling limit; for strong but finite coupling this correspondence is only a conjecture, the validity of which is beyond the scope of this article.

  1. Phase transitions in a gas of anyons

    SciTech Connect

    MacKenzie, R.; Nebia-Rahal, F.; Paranjape, M. B.; Richer, J.

    2010-10-01

    We continue our numerical Monte Carlo simulation of a gas of closed loops on a 3 dimensional lattice, however, now in the presence of a topological term added to the action which corresponds to the total linking number between the loops. We compute the linking number using a novel approach employing certain notions from knot theory. Adding the topological term converts the particles into anyons. Interpreting the model as an effective theory that describes the 2+1-dimensional Abelian Higgs model in the asymptotic strong-coupling regime, the topological linking number simply corresponds to the addition to the action of the Chern-Simons term. The system continues to exhibit a phase transition as a function of the vortex mass as it becomes small. We find the following new results. The Chern-Simons term has no effect on the Wilson loop. On the other hand, it does effect the 't Hooft loop of a given configuration, adding the linking number of the 't Hooft loop with all of the dynamical vortex loops. We find the unexpected result that both the Wilson loop and the 't Hooft loop exhibit a perimeter law even though there are no massless particles in the theory, in both phases of the theory. It should be noted that our method suffers from numerical instabilities if the coefficient of the Chern-Simons term is too large; thus, we have restricted our results to small values of this parameter. Furthermore, interpreting the lattice loop gas as an effective theory describing the Abelian Higgs model is only known to be true in the infinite coupling limit; for strong but finite coupling this correspondence is only a conjecture, the validity of which is beyond the scope of this article.

  2. Pressure induced phase transitions in ceramic compounds containing tetragonal zirconia

    SciTech Connect

    Sparks, R.G.; Pfeiffer, G.; Paesler, M.A.

    1988-12-01

    Stabilized tetragonal zirconia compounds exhibit a transformation toughening process in which stress applied to the material induces a crystallographic phase transition. The phase transition is accompanied by a volume expansion in the stressed region thereby dissipating stress and increasing the fracture strength of the material. The hydrostatic component of the stress required to induce the phase transition can be investigated by the use of a high pressure technique in combination with Micro-Raman spectroscopy. The intensity of Raman lines characteristic for the crystallographic phases can be used to calculate the amount of material that has undergone the transition as a function of pressure. It was found that pressures on the order of 2-5 kBar were sufficient to produce an almost complete transition from the original tetragonal to the less dense monoclinic phase; while a further increase in pressure caused a gradual reversal of the transition back to the original tetragonal structure.

  3. Electrical Dissipation Measurement of Polymer Phase Transitions

    NASA Technical Reports Server (NTRS)

    Long, E. R., R; Schuszler, A., II

    1983-01-01

    Technique measures solid/solid, glass/rubber, and liquid/liquid transition temperatures in polymers having dipole moments. Technique based on change in dipole packing that occurs with each transition and measured as change in electrical dissipation factor. Change in dipole packing occuring with each transition sensed by effect on dissipation factor.

  4. Consistent lattice Boltzmann equations for phase transitions.

    PubMed

    Siebert, D N; Philippi, P C; Mattila, K K

    2014-11-01

    Unlike conventional computational fluid dynamics methods, the lattice Boltzmann method (LBM) describes the dynamic behavior of fluids in a mesoscopic scale based on discrete forms of kinetic equations. In this scale, complex macroscopic phenomena like the formation and collapse of interfaces can be naturally described as related to source terms incorporated into the kinetic equations. In this context, a novel athermal lattice Boltzmann scheme for the simulation of phase transition is proposed. The continuous kinetic model obtained from the Liouville equation using the mean-field interaction force approach is shown to be consistent with diffuse interface model using the Helmholtz free energy. Density profiles, interface thickness, and surface tension are analytically derived for a plane liquid-vapor interface. A discrete form of the kinetic equation is then obtained by applying the quadrature method based on prescribed abscissas together with a third-order scheme for the discretization of the streaming or advection term in the Boltzmann equation. Spatial derivatives in the source terms are approximated with high-order schemes. The numerical validation of the method is performed by measuring the speed of sound as well as by retrieving the coexistence curve and the interface density profiles. The appearance of spurious currents near the interface is investigated. The simulations are performed with the equations of state of Van der Waals, Redlich-Kwong, Redlich-Kwong-Soave, Peng-Robinson, and Carnahan-Starling. PMID:25493907

  5. Phononic Crystal Tunable via Ferroelectric Phase Transition

    NASA Astrophysics Data System (ADS)

    Xu, Chaowei; Cai, Feiyan; Xie, Shuhong; Li, Fei; Sun, Rong; Fu, Xianzhu; Xiong, Rengen; Zhang, Yi; Zheng, Hairong; Li, Jiangyu

    2015-09-01

    Phononic crystals (PCs) consisting of periodic materials with different acoustic properties have potential applications in functional devices. To realize more smart functions, it is desirable to actively control the properties of PCs on demand, ideally within the same fabricated system. Here, we report a tunable PC made of Ba0.7Sr0.3Ti O3 (BST) ceramics, wherein a 20-K temperature change near room temperature results in a 20% frequency shift in the transmission spectra induced by a ferroelectric phase transition. The tunability phenomenon is attributed to the structure-induced resonant excitation of A0 and A1 Lamb modes that exist intrinsically in the uniform BST plate, while these Lamb modes are sensitive to the elastic properties of the plate and can be modulated by temperature in a BST plate around the Curie temperature. The study finds opportunities for creating tunable PCs and enables smart temperature-tuned devices such as the Lamb wave filter or sensor.

  6. Phase transitions in models of human cooperation

    NASA Astrophysics Data System (ADS)

    Perc, Matjaž

    2016-08-01

    If only the fittest survive, why should one cooperate? Why should one sacrifice personal benefits for the common good? Recent research indicates that a comprehensive answer to such questions requires that we look beyond the individual and focus on the collective behavior that emerges as a result of the interactions among individuals, groups, and societies. Although undoubtedly driven also by culture and cognition, human cooperation is just as well an emergent, collective phenomenon in a complex system. Nonequilibrium statistical physics, in particular the collective behavior of interacting particles near phase transitions, has already been recognized as very valuable for understanding counterintuitive evolutionary outcomes. However, unlike pairwise interactions among particles that typically govern solid-state physics systems, interactions among humans often involve group interactions, and they also involve a larger number of possible states even for the most simplified description of reality. Here we briefly review research done in the realm of the public goods game, and we outline future research directions with an emphasis on merging the most recent advances in the social sciences with methods of nonequilibrium statistical physics. By having a firm theoretical grip on human cooperation, we can hope to engineer better social systems and develop more efficient policies for a sustainable and better future.

  7. Quantum phase transitions and local magnetism in Mott insulators: A local probe investigation using muons, neutrons, and photons

    NASA Astrophysics Data System (ADS)

    Frandsen, Benjamin A.

    destroyed at the quantum phase transition. Taken together, these findings point unambiguously to a first-order quantum phase transition in these systems. We also conducted x-ray and neutron PDF experiments, which suggest that the distinct atomic structures associated with the insulating and metallic phases similarly coexist near the quantum phase transition. These results have significant implications for our understanding of the Mott metal-insulator quantum phase transition in real materials. The second part of this thesis centers on the derivation and development of the magnetic pair distribution function (mPDF) technique and its application to the antiferromagnetic Mott insulator MnO. The atomic PDF method involves Fourier transforming the x-ray or neutron total scattering intensity from reciprocal space into real space to directly reveal the local atomic correlations in a material, which may deviate significantly from the average crystallographic structure of that material. Likewise, the mPDF method involves Fourier transforming the magnetic neutron total scattering intensity to probe the local correlations of magnetic moments in the material, which may exist on short length scales even when the material has no long-range magnetic order. After deriving the fundamental mPDF equations and providing a proof-of-principle by recovering the known magnetic structure of antiferromagnetic MnO, we used this technique to investigate the short-range magnetic correlations that persist well into the paramagnetic phase of MnO. By combining the mPDF measurements with ab initio calculations of the spin-spin correlation function in paramagnetic MnO, we were able to quantitatively account for the observed mPDF. We also used the mPDF data to evaluate competing ab initio theories, thereby resolving some longstanding questions about the magnetic exchange interactions in MnO.

  8. Highly birefringent crystal for Raman transitions with phase modulators

    NASA Astrophysics Data System (ADS)

    Arias, Nieves; Abediyeh, Vahide; Hamzeloui, Saeed; Jeronimo-Moreno, Yasser; Gomez, Eduardo

    2016-05-01

    We present a system to excite Raman transitions with minimum phase noise. The system uses a phase modulator to generate the phase locked beams required for the transition. We use a long calcite crystal to filter out one of the sidebands, avoiding the cancellation that appears at high detunings for phase modulation. The measured phase noise is limited by the quality of the microwave synthesizer. We use the calcite crystal a second time to produce a co-propagating Raman pair with perpendicular polarizations to drive velocity insensitive Raman transitions. Support from CONACYT and Fundacion Marcos Moshinsky.

  9. Interplay between micelle formation and waterlike phase transitions

    NASA Astrophysics Data System (ADS)

    Heinzelmann, G.; Figueiredo, W.; Girardi, M.

    2010-02-01

    A lattice model for amphiphilic aggregation in the presence of a structured waterlike solvent is studied through Monte Carlo simulations. We investigate the interplay between the micelle formation and the solvent phase transition in two different regions of temperature-density phase diagram of pure water. A second order phase transition between the gaseous (G) and high density liquid (HDL) phases that occurs at very high temperatures, and a first order phase transition between the low density liquid (LDL) and (HDL) phases that takes place at lower temperatures. In both cases, we find the aggregate size distribution curve and the critical micellar concentration as a function of the solvent density across the transitions. We show that micelle formation drives the LDL-HDL first order phase transition to lower solvent densities, while the transition G-HDL is driven to higher densities, which can be explained by the markedly different degrees of micellization in both cases. The diffusion coefficient of surfactants was also calculated in the LDL and HDL phases, changing abruptly its behavior due to the restructuring of waterlike solvent when we cross the first order LDL-HDL phase transition. To understand such behavior, we calculate the solvent density and the number of hydrogen bonds per water molecule close to micelles. The curves of the interfacial solvent density and the number of hydrogen bonds per water molecule in the first hydration signal a local phase change of the interfacial water, clarifying the diffusion mechanism of free surfactants in the solvent.

  10. Strain glass state as the boundary of two phase transitions

    NASA Astrophysics Data System (ADS)

    Zhou, Zhijian; Cui, Jian; Ren, Xiaobing

    2015-08-01

    A strain glass state was found to be located between B2-B19’ (cubic to monoclinic) phase transition and B2-R (cubic to rhombohedral) phase transition in Ti49Ni51 alloys after aging process. After a short time aging, strong strain glass transition was observed, because the size of the precipitates is small, which means the strain field induced by the precipitates is isotropic and point-defect-like, and the distribution of the precipitates is random. After a long time aging, the average size of the precipitates increases. The strong strain field induced by the precipitates around them forces the symmetry of the matrix materials to conform to the symmetry of the crystalline structure of the precipitates, which results in the new phase transition. The experiment shows that there exists no well-defined boundary in the evolution from the strain glass transition to the new phase transition. Due to its generality, this glass mediated phase transition divergence scheme can be applied to other proper material systems to induce a more important new phase transition path, which can be useful in the field of phase transition engineering.

  11. Strain glass state as the boundary of two phase transitions.

    PubMed

    Zhou, Zhijian; Cui, Jian; Ren, Xiaobing

    2015-01-01

    A strain glass state was found to be located between B2-B19' (cubic to monoclinic) phase transition and B2-R (cubic to rhombohedral) phase transition in Ti49Ni51 alloys after aging process. After a short time aging, strong strain glass transition was observed, because the size of the precipitates is small, which means the strain field induced by the precipitates is isotropic and point-defect-like, and the distribution of the precipitates is random. After a long time aging, the average size of the precipitates increases. The strong strain field induced by the precipitates around them forces the symmetry of the matrix materials to conform to the symmetry of the crystalline structure of the precipitates, which results in the new phase transition. The experiment shows that there exists no well-defined boundary in the evolution from the strain glass transition to the new phase transition. Due to its generality, this glass mediated phase transition divergence scheme can be applied to other proper material systems to induce a more important new phase transition path, which can be useful in the field of phase transition engineering. PMID:26307500

  12. Quantum phase transitions in the presence of disorder and dissipation

    NASA Astrophysics Data System (ADS)

    Kotabage, Chetan

    A quantum phase transition is a phase transition at absolute zero occurring under variations in an external non-thermal parameter such as magnetic field or pressure. Quantum phase transitions are one among the important topics currently investigated in condensed matter physics. They are observed in various systems, e.g., in the ferromagnetic-paramagnetic phase transition in LiHoF 4 or in the superconductor-metal phase transition in nanowires. A particular class of quantum phase transitions, which is phase transitions in the presence of disorder and dissipation, is investigated here. An example of this class is the ferromagnetic-paramagnetic phase transition in Ni 1-xVx or CePd 1-xRhx caused by variations in chemical composition. In these system, disorder is due to random positions of doping element and the dynamics of order-parameter fluctuations is dissipative due to conduction electrons. These quantum phase transitions are explained using the following approach: The Landau-Ginzberg-Wilson functional, which is derived from a microscopic Hamiltonian, is treated by the strong-disorder renormalization group method. For ohmic damping, phase transitions are strongly influenced by disorder and the critical point is an infinite-randomness fixed point, which is in the universality class same as that of the random transverse-field Ising model. The scaling form of observable quantities is activated type rather than conventional power-law type. For superohmic damping, the strong-disorder renormalization group method yields one of the recursion relationships different from ohmic damping. This difference indicates a more conventional transition for superohmic damping.

  13. Dynamics of a photoinduced phase transition in polydiacetylene crystals

    NASA Astrophysics Data System (ADS)

    Koshihara, S.; Tokura, Y.; Takeda, K.; Koda, T.

    1995-09-01

    The dynamical process of the photoinduced phase transition in polydiacetylene (PDA) single crystals has been investigated by time-resolved spectroscopy with varying temperature, excitation photon energy, and intensity. The photoinduced phase transition can be driven bidirectionally between the two (A and B) phases by dichromatic irradiation of a laser pulse, when the temperature of the PDA crystal is kept around the phase transition temperature (Tc). It was found that primary process of the photoinduced phase transition is mostly completed within 50 ns. In addition, occurrence of a transient domain injection has been confirmed at temperatures far below and above Tc. Together with the time-resolved measurement of photocurrent, we have found a close correlation between the photocurrent intensity and the phase conversion efficiency. This suggests that the domain walls separating the A and B phases can carry the charge.

  14. Method for identifying and probing phase transitions in materials

    DOEpatents

    Asay, Blaine W.; Henson, Bryan F.; Sander, Robert K.; Robinson, Jeanne M.; Son, Steven F.; Dickson, Peter M.

    2002-01-01

    The present invention includes a method for identifying and probing phase transitions in materials. A polymorphic material capable of existing in at least one non-centrosymmetric phase is interrogated with a beam of laser light at a chosen wavelength and frequency. A phase transition is induced in the material while it is interrogated. The intensity of light scattered by the material and having a wavelength equal to one half the wavelength of the interrogating laser light is detected. If the phase transition results in the production of a non-centrosymmetric phase, the intensity of this scattered light increases; if the phase transition results in the disappearance of a non-centrosymmetric phase, the intensity of this scattered light decreases.

  15. Liquid liquid phase transition in Stillinger Weber silicon

    NASA Astrophysics Data System (ADS)

    Beaucage, Philippe; Mousseau, Normand

    2005-04-01

    It was recently demonstrated that Stillinger-Weber silicon undergoes a liquid-liquid first-order phase transition deep into the supercooled region (Sastry and Angell 2003 Nat. Mater. 2 739). Here we study the effects of perturbations on this phase transition. We show that the order of the liquid-liquid transition changes with negative pressure. We also find that the liquid-liquid transition disappears when the three-body term of the potential is strengthened by as little as 5%. This implies that the details of the potential could affect strongly the nature and even the existence of the liquid-liquid phase.

  16. Transformation of phase transitions driven by an anisotropic random field

    NASA Astrophysics Data System (ADS)

    Popa-Nita, V.; Kralj, Samo

    2005-04-01

    We carry out a comparative study of the influence of a random anisotropy field on continuous and discontinuous phase transitions. The ordered phase, which is reached via a continuous symmetry breaking phase transition, is characterized by an order parameter and by a corresponding hydrodynamic continuum field. We assume that the response of the hydrodynamic field to the imposed disorder results in a domainlike pattern of the system. For a strong enough disorder both transitions become gradual. For weaker disorder strengths the disorder converts a second order transition into a discontinuous one.

  17. Bi-phase transition diagrams of metallic thin multilayers

    SciTech Connect

    Li, J.C.; Liu, W.; Jiang, Q. . E-mail: jiangq@jlu.edu.cn

    2005-02-01

    Phase transitions of metallic multilayers induced by differences in interface energy are considered thermodynamically, based on a thermodynamic model for interface energy and the Goldschmidt premise for lattice contraction. Bi-phase transition diagrams of Co/Cr, Zr/Nb, Ti/Nb and Ti/Al multilayers are constructed, which are in agreement with experimental results.

  18. Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti4+) Doping

    PubMed Central

    Wu, Yanfei; Fan, Lele; Liu, Qinghua; Chen, Shi; Huang, Weifeng; Chen, Feihu; Liao, Guangming; Zou, Chongwen; Wu, Ziyu

    2015-01-01

    The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti4+-doped VO2 (TixV1-xO2) system. It was observed that the TC of TixV1-xO2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in TixV1-xO2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials. PMID:25950809

  19. Pressure-induced phase transitions and metallization in VO2

    NASA Astrophysics Data System (ADS)

    Bai, Ligang; Li, Quan; Corr, Serena A.; Meng, Yue; Park, Changyong; Sinogeikin, Stanislav V.; Ko, Changhyun; Wu, Junqiao; Shen, Guoyin

    2015-03-01

    We report the results of pressure-induced phase transitions and metallization in VO2 based on synchrotron x-ray diffraction, electrical resistivity, and Raman spectroscopy. Our isothermal compression experiments at room temperature and 383 K show that the room temperature monoclinic phase (M 1 ,P 21/c ) and the high-temperature rutile phase (R ,P 42/m n m ) of VO2 undergo phase transitions to a distorted M 1 monoclinic phase (M 1' ,P 21/c ) above 13.0 GPa and to an orthorhombic phase (CaCl2-like, P n n m ) above 13.7 GPa, respectively. Upon further compression, both high-pressure phases transform into a new phase (phase X ) above 34.3 and 38.3 GPa at room temperature and 383 K, respectively. The room temperature M 1 -M 1' phase transition structurally resembles the R -CaCl2 phase transition at 383 K, suggesting a second-order displacive type of transition. Contrary to previous studies, our electrical resistivity results, Raman measurements, as well as ab initio calculations indicate that the new phase X , rather than the M 1' phase, is responsible for the metallization under pressure. The metallization mechanism is discussed based on the proposed crystal structure.

  20. Infrared reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium dioxide

    SciTech Connect

    Ruzmetov, Dmitry; Zawilski, Kevin; Senanayake, Sanjaya D; Narayanamurti, Venkatesh; Ramanathan, Shriram

    2008-01-01

    Optical properties and valence band density of states near the Fermi level of high-quality VO2 thin films have been investigated by mid-infrared reflectometry and hard-UV (h = 150 eV) photoemission spectroscopy. An exceptionally large change in reflectance from 2 to 94% is found upon the thermally driven metal insulator transition (MIT). The infrared dispersion spectra of the reflectance across the MIT are presented and evidence for the percolative nature of the MIT is pointed out. The discrepancy between the MIT temperatures defined from the electrical and optical properties is found and its origin is discussed. The manifestation of the MIT is observed in the photoemission spectra of the V 3d levels. The analysis of the changes of the V 3d density of states is done and the top valence band shift upon the MIT is measured to be 0.6 eV.