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Sample records for microwave plasma-enhanced chemical

  1. Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Shim, Gyu Il; Kojima, Yoshihiro; Kono, Satoshi; Ohno, Yutaka; Ishijima, Tatsuo

    2008-07-01

    Carbon nanotubes (CNTs) are fabricated by adopting plasma-enhanced chemical vapor deposition (PECVD) with a planar microwave plasma source. Plasma is produced by a slot antenna at 2.45-GHz microwave injection in CH4/H2 mixture. In this study, it is shown that avoiding the exposure of the substrate to the plasma drastically improves the CNT growth. Furthermore, it is found that the CNT quality can be controlled with the optimization of one of the steps in the catalyst treatment, such as the preheating procedure; the treated catalyst is considered to be unaffected by the heating in the high-density microwave plasma treatment during the CNT growth.

  2. Deposition of aligned bamboo-like carbon nanotubes via microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cui, H.; Zhou, O.; Stoner, B. R.

    2000-11-01

    Aligned multiwall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. Scanning electron microscopy shows that the nanotubes are well aligned with high aspect ratio and growth direction normal to the substrate. Transmission electron microscopy reveals that the majority phase has a bamboo-like structure. Data are also presented showing process variable effects on the size and microstructure of the aligned nanotubes, giving insight into possible nucleation and growth mechanisms for the process.

  3. Growth of cubic boron nitride on diamond particles by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Saitoh, H.; Yarbrough, W. A.

    1991-06-01

    The nucleation and growth of cubic boron nitride (c-BN) onto diamond powder using solid NaBH4 in low pressure gas mixtures of NH3 and H2 by microwave plasma enhanced chemical vapor deposition has been studied. Boron nitride was deposited on submicron diamond seed crystals scattered on (100) silicon single crystal wafers and evidence was found for the formation of the cubic phase. Diamond powder surfaces appear to preferentially nucleate c-BN. In addition, it was found that the ratio of c-BN to turbostratic structure boron nitride (t-BN) deposited increases with decreasing NH3 concentration in H2. It is suggested that this may be due to an increased etching rate for t-BN by atomic hydrogen whose partial pressure may vary with NH3 concentration.

  4. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    SciTech Connect

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao; Zhou Lei; Mushtaq, Fajer; Ouyang Defang; James, David; Roberts, Darren

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  5. Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition.

    PubMed

    Joung, Y H; Kang, F S; Lee, S; Kang, H; Choi, W S; Choi, Y K; Song, B S; Lee, J; Hong, B

    2016-05-01

    In this study, diamond films were prepared using the microwave plasma-enhanced chemical vapor deposition (PECVD) system, which included a DC bias system to enhance the nucleation of the films. The films were synthesized on Si wafers with different ratios of methane (CH4) and hydrogen (H2) gases. We have studied the effects of the CH4-to-H2 ratio on the structural and optical properties of diamond films. The thickness and surface profile of the films were characterized via field emission scanning electron microscopy (FE-SEM). Raman was used to investigate the structural properties of the diamond films. The refractive indexes as functions of the CH4-to-H2 ratio were measured using an ellipsometer. The FE-SEM analysis showed that the 3 and 5 sccm CH4 created diamond films. The Raman analysis indicated that a nanocrystalline diamond film was formed at 3 sccm; a general diamond film, at 5 sccm; and films similar to the a-C:H film, at 7 sccm. The ellipsometer measurement showed that the refractive index of the synthesized diamond film was around 2.42 at 3 sccm. This value decreased as the CH4 volume increased. PMID:27483918

  6. Coating of diamond-like carbon nanofilm on alumina by microwave plasma enhanced chemical vapor deposition process.

    PubMed

    Rattanasatien, Chotiwan; Tonanon, Nattaporn; Bhanthumnavin, Worawan; Paosawatyanyong, Boonchoat

    2012-01-01

    Diamond-like carbon (DLC) nanofilms with thickness varied from under one hundred to a few hundred nanometers have been successfully deposited on alumina substrates by microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. To obtain dense continuous DLC nanofilm coating over the entire sample surface, alumina substrates were pre-treated to enhance the nucleation density. Raman spectra of DLC films on samples showed distinct diamond peak at around 1332 cm(-1), and the broad band of amorphous carbon phase at around 1550 cm(-1). Full width at half maximum height (FWHM) values indicated good formation of diamond phase in all films. The result of nano-indentation test show that the hardness of alumina samples increase from 7.3 +/- 2.0 GPa in uncoated samples to 15.8 +/- 4.5-52.2 +/- 2.1 GPa in samples coated with DLC depending on the process conditions. It is observed that the hardness values are still in good range although the thickness of the films is less than a hundred nanometer. PMID:22524033

  7. Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

    SciTech Connect

    Chu, Yueh-Chieh; Tzeng, Yonhua; Auciello, Orlando

    2014-01-14

    Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from −490 V to −375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from −375 V to −390 V for silicon pre-heated to 900 °C. Method C employs −350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

  8. Synthesis of thin films in boron-carbon-nitrogen ternary system by microwave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kukreja, Ratandeep Singh

    The Boron Carbon Nitorgen (B-C-N) ternary system includes materials with exceptional properties such as wide band gap, excellent thermal conductivity, high bulk modulus, extreme hardness and transparency in the optical and UV range that find application in most fields ranging from micro-electronics, bio-sensors, and cutting tools to materials for space age technology. Interesting materials that belong to the B-C-N ternary system include Carbon nano-tubes, Boron Carbide, Boron Carbon Nitride (B-CN), hexagonal Boron Nitride ( h-BN), cubic Boron Nitride (c-BN), Diamond and beta Carbon Nitride (beta-C3N4). Synthesis of these materials requires precisely controlled and energetically favorable conditions. Chemical vapor deposition is widely used technique for deposition of thin films of ceramics, metals and metal-organic compounds. Microwave plasma enhanced chemical vapor deposition (MPECVD) is especially interesting because of its ability to deposit materials that are meta-stable under the deposition conditions, for e.g. diamond. In the present study, attempt has been made to synthesize beta-carbon nitride (beta-C3N4) and cubic-Boron Nitride (c-BN) thin films by MPECVD. Also included is the investigation of dependence of residual stress and thermal conductivity of the diamond thin films, deposited by MPECVD, on substrate pre-treatment and deposition temperature. Si incorporated CNx thin films are synthesized and characterized while attempting to deposit beta-C3N4 thin films on Si substrates using Methane (CH4), Nitrogen (N2), and Hydrogen (H2). It is shown that the composition and morphology of Si incorporated CNx thin film can be tailored by controlling the sequence of introduction of the precursor gases in the plasma chamber. Greater than 100mum size hexagonal crystals of N-Si-C are deposited when Nitrogen precursor is introduced first while agglomerates of nano-meter range graphitic needles of C-Si-N are deposited when Carbon precursor is introduced first in the

  9. Effect of Gas Sources on the Deposition of Nano-Crystalline Diamond Films Prepared by Microwave Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Weng, Jun; Xiong, Liwei; Wang, Jianhua; Man, Weidong; Chen, Guanhu

    2010-12-01

    Nano-crystalline diamond (NCD) films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor in C2H5OH/H2 and CH4/H2/O2 systems, respectively, with a constant ratio of carbon/hydrogen/oxygen. By means of atomic force microscopy (AFM) and X-ray diffraction (XRD), it was shown that the NCD films deposited in the C2H5OH/H2 system possesses more uniform surface than that deposited in the CH4/H2/O2 system. Results from micro-Raman spectroscopy revealed that the quality of the NCD films was different even though the plasmas in the two systems contain exactly the same proportion of elements. In order to explain this phenomenon, the bond energy of forming OH groups, energy distraction in plasma and the deposition process of NCD films were studied. The experimental results and discussion indicate that for a same ratio of carbon/hydrogen/oxygen, the C2H5OH/H2 plasma was beneficial to deposit high quality NCD films with smaller average grain size and lower surface roughness.

  10. Study of the catalyst evolution during annealing preceding the growth of carbon nanotubes by microwave plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Malesevic, Alexander; Chen, Hong; Hauffman, Tom; Vanhulsel, Annick; Terryn, Herman; Van Haesendonck, Chris

    2007-11-01

    A two-step catalyst annealing process is developed in order to control the diameter of nickel catalyst particles for the growth of carbon nanotubes (CNTs) by microwave plasma-enhanced chemical vapour deposition (MW PECVD). Thermal annealing of a continuous nickel film in a hydrogen (H2) environment in a first step is found to be insufficient for the formation of nanometre-size, high-density catalyst particles. In a second step, a H2 MW plasma treatment decreases the catalyst diameter by a factor of two and increases the particle density by a factor of five. An x-ray photoelectron spectroscopy study of the catalyst after each step in the annealing process is presented. It is found that the catalyst particles interact with the substrate during thermal annealing, thereby forming a silicate, even if a buffer layer in between the catalyst and the substrate is intended to prevent silicate formation. The silicate formation and reduction is shown to be directly related to the CNT growth mechanism, determining whether the catalyst particles reside at the base or the tip of the growing CNTs. The catalyst particles are used for the growth of a high-density CNT coating by MW PECVD. CNTs are analysed with electron microscopy and Raman spectroscopy.

  11. A solid-state nuclear magnetic resonance study of post-plasma reactions in organosilicone microwave plasma-enhanced chemical vapor deposition (PECVD) coatings.

    PubMed

    Hall, Colin J; Ponnusamy, Thirunavukkarasu; Murphy, Peter J; Lindberg, Mats; Antzutkin, Oleg N; Griesser, Hans J

    2014-06-11

    Plasma-polymerized organosilicone coatings can be used to impart abrasion resistance and barrier properties to plastic substrates such as polycarbonate. Coating rates suitable for industrial-scale deposition, up to 100 nm/s, can be achieved through the use of microwave plasma-enhanced chemical vapor deposition (PECVD), with optimal process vapors such as tetramethyldisiloxane (TMDSO) and oxygen. However, it has been found that under certain deposition conditions, such coatings are subject to post-plasma changes; crazing or cracking can occur anytime from days to months after deposition. To understand the cause of the crazing and its dependence on processing plasma parameters, the effects of post-plasma reactions on the chemical bonding structure of coatings deposited with varying TMDSO-to-O2 ratios was studied with (29)Si and (13)C solid-state magic angle spinning nuclear magnetic resonance (MAS NMR) using both single-pulse and cross-polarization techniques. The coatings showed complex chemical compositions significantly altered from the parent monomer. (29)Si MAS NMR spectra revealed four main groups of resonance lines, which correspond to four siloxane moieties (i.e., mono (M), di (D), tri (T), and quaternary (Q)) and how they are bound to oxygen. Quantitative measurements showed that the ratio of TMDSO to oxygen could shift the chemical structure of the coating from 39% to 55% in Q-type bonds and from 28% to 16% for D-type bonds. Post-plasma reactions were found to produce changes in relative intensities of (29)Si resonance lines. The NMR data were complemented by Fourier transform infrared (FTIR) spectroscopy. Together, these techniques have shown that the bonding environment of Si is drastically altered by varying the TMDSO-to-O2 ratio during PECVD, and that post-plasma reactions increase the cross-link density of the silicon-oxygen network. It appears that Si-H and Si-OH chemical groups are the most susceptible to post-plasma reactions. Coatings produced at a

  12. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    NASA Technical Reports Server (NTRS)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  13. Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

    SciTech Connect

    Ray, S.K.; Maiti, C.K.; Lahiri, S.K.; Chakrabarti, N.B.

    1992-05-01

    Silicon dioxide films have been deposited at low temperatures (200-250{degrees}C) by microwave plasma enhanced decomposition of tetraethylorthosilicate (TEOS). The effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and the physical properties of the films have been investigated. Structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x-ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses. Films deposited using TEOS and oxygen have confirmed a density comparable to standard silane-based low-pressure chemical vapor deposited and plasma enhanced chemical vapor deposited oxides, nearly perfect stoichiometry, extremely low sodium and carbon content, and the absence of many undesirable hydrogen related bonds. Various electrical properties, viz., resistivity, breakdown strength, fixed oxide charge density, interface state density, and trapping behavior have been evaluated by the characterization of metal-oxide-semiconductor capacitors fabricated using deposited oxides. Deposited films on thin native oxides grown by either in situ plasma oxidation or a low temperature thermal oxidation exhibited excellent electrical properties. 32 refs., 16 figs., 2 tabs.

  14. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  15. Quantum cascade laser investigations of CH{sub 4} and C{sub 2}H{sub 2} interconversion in hydrocarbon/H{sub 2} gas mixtures during microwave plasma enhanced chemical vapor deposition of diamond

    SciTech Connect

    Ma Jie; Cheesman, Andrew; Ashfold, Michael N. R.; Hay, Kenneth G.; Wright, Stephen; Langford, Nigel; Duxbury, Geoffrey; Mankelevich, Yuri A.

    2009-08-01

    CH{sub 4} and C{sub 2}H{sub 2} molecules (and their interconversion) in hydrocarbon/rare gas/H{sub 2} gas mixtures in a microwave reactor used for plasma enhanced diamond chemical vapor deposition (CVD) have been investigated by line-of-sight infrared absorption spectroscopy in the wavenumber range of 1276.5-1273.1 cm{sup -1} using a quantum cascade laser spectrometer. Parameters explored include process conditions [pressure, input power, source hydrocarbon, rare gas (Ar or Ne), input gas mixing ratio], height (z) above the substrate, and time (t) after addition of hydrocarbon to a pre-existing Ar/H{sub 2} plasma. The line integrated absorptions so obtained have been converted to species number densities by reference to the companion two-dimensional (r,z) modeling of the CVD reactor described in Mankelevich et al. [J. Appl. Phys. 104, 113304 (2008)]. The gas temperature distribution within the reactor ensures that the measured absorptions are dominated by CH{sub 4} and C{sub 2}H{sub 2} molecules in the cool periphery of the reactor. Nonetheless, the measurements prove to be of enormous value in testing, tensioning, and confirming the model predictions. Under standard process conditions, the study confirms that all hydrocarbon source gases investigated (methane, acetylene, ethane, propyne, propane, and butane) are converted into a mixture dominated by CH{sub 4} and C{sub 2}H{sub 2}. The interconversion between these two species is highly dependent on the local gas temperature and the H atom number density, and thus on position within the reactor. CH{sub 4}->C{sub 2}H{sub 2} conversion occurs most efficiently in an annular shell around the central plasma (characterized by 1400CH{sub 4} is favored in the more distant regions where T{sub gas}<1400 K. Analysis of the multistep interconversion mechanism reveals substantial net consumption of H atoms accompanying the CH{sub 4}->C{sub 2}H{sub 2

  16. Quantum cascade laser investigations of CH4 and C2H2 interconversion in hydrocarbon/H2 gas mixtures during microwave plasma enhanced chemical vapor deposition of diamond

    NASA Astrophysics Data System (ADS)

    Ma, Jie; Cheesman, Andrew; Ashfold, Michael N. R.; Hay, Kenneth G.; Wright, Stephen; Langford, Nigel; Duxbury, Geoffrey; Mankelevich, Yuri A.

    2009-08-01

    CH4 and C2H2 molecules (and their interconversion) in hydrocarbon/rare gas/H2 gas mixtures in a microwave reactor used for plasma enhanced diamond chemical vapor deposition (CVD) have been investigated by line-of-sight infrared absorption spectroscopy in the wavenumber range of 1276.5-1273.1 cm-1 using a quantum cascade laser spectrometer. Parameters explored include process conditions [pressure, input power, source hydrocarbon, rare gas (Ar or Ne), input gas mixing ratio], height (z) above the substrate, and time (t) after addition of hydrocarbon to a pre-existing Ar/H2 plasma. The line integrated absorptions so obtained have been converted to species number densities by reference to the companion two-dimensional (r ,z) modeling of the CVD reactor described in Mankelevich et al. [J. Appl. Phys. 104, 113304 (2008)]. The gas temperature distribution within the reactor ensures that the measured absorptions are dominated by CH4 and C2H2 molecules in the cool periphery of the reactor. Nonetheless, the measurements prove to be of enormous value in testing, tensioning, and confirming the model predictions. Under standard process conditions, the study confirms that all hydrocarbon source gases investigated (methane, acetylene, ethane, propyne, propane, and butane) are converted into a mixture dominated by CH4 and C2H2. The interconversion between these two species is highly dependent on the local gas temperature and the H atom number density, and thus on position within the reactor. CH4→C2H2 conversion occurs most efficiently in an annular shell around the central plasma (characterized by 1400

  17. Growth of graphene films by plasma enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Baraton, Laurent; Gangloff, Laurent; Xavier, Stéphane; Cojocaru, Costel S.; Huc, Vincent; Legagneux, Pierre; Lee, Young Hee; Pribat, Didier

    2009-08-01

    Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO2 layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

  18. Modeling and Simulation of Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Smith, Aaron; Bett, Dominic; Cunningham, Monisha; Sen, Sudip

    2015-04-01

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Recent study from the X-ray diffraction spectra of SnO2 films deposited as a function of RF power apparently indicates that RF power is playing a stabilizing role and hence in the better deposition. The results show that the RF power results in smoother morphology, improved crystallinity, and lower sheet resistance value in the PECVD process. The PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. In this talk we will address two aspects of the problem, first to develop a model to study the mechanism of how the PECVD is effected by the RF power, and second to actually simulate the effect of RF power on PECVD. As the PECVD is a very important component of the plasma processing technology with many applications in the semiconductor technology and surface science, the research proposed here has the prospect to revolutionize the plasma processing technology through the stabilizing role of the RF power.

  19. Analysis of mass transport in an atmospheric pressure remote plasma-enhanced chemical vapor deposition process

    SciTech Connect

    Cardoso, R. P.; Belmonte, T.; Henrion, G.; Gries, T.; Tixhon, E.

    2010-01-15

    In remote microwave plasma enhanced chemical vapor deposition processes operated at atmospheric pressure, high deposition rates are associated with the localization of precursors on the treated surface. We show that mass transport can be advantageously ensured by convection for the heavier precursor, the lighter being driven by turbulent diffusion toward the surface. Transport by laminar diffusion is negligible. The use of high flow rates is mandatory to have a good mixing of species. The use of an injection nozzle with micrometer-sized hole enables us to define accurately the reaction area between the reactive species. The localization of the flow leads to high deposition rates by confining the reactive species over a small area, the deposition yield being therefore very high. Increasing the temperature modifies nonlinearly the deposition rates and the coating properties.

  20. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  1. Synthesis, characterization and cathodoluminescence of nanostructured SnO2 using microwave plasma enhanced CVD

    NASA Astrophysics Data System (ADS)

    Wang, Chih-Yuan; Chen, Tzu-Wang; Lin, Chun-Chun; Hsieh, Wei-Jen; Chang, Ku-Ling; Shih, Han C.

    2007-05-01

    Nanostructured tin oxides have been synthesized in the form of nano-pins using SnCl2 · 2H2O as precursors in a short period of 2.5 min by microwave plasma enhanced CVD. The resulting nano-pins have square cross sections of 50-60 nm at the pin head, 10-20 nm at the pin proper and less than 5 nm at the pin tail; the full length of the pin is about several micrometres. The optical properties measured by cathodoluminescence show strong indigo emission at 404 and 460 nm. The nucleation and growth are dominated by a self-catalytic vapour-liquid-solid mechanism, which has been studied in this work.

  2. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    SciTech Connect

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-15

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  3. Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

    NASA Astrophysics Data System (ADS)

    Dechana, A.; Thamboon, P.; Boonyawan, D.

    2014-10-01

    A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

  4. Vertically aligned peptide nanostructures using plasma-enhanced chemical vapor deposition.

    PubMed

    Vasudev, Milana C; Koerner, Hilmar; Singh, Kristi M; Partlow, Benjamin P; Kaplan, David L; Gazit, Ehud; Bunning, Timothy J; Naik, Rajesh R

    2014-02-10

    In this study, we utilize plasma-enhanced chemical vapor deposition (PECVD) for the deposition of nanostructures composed of diphenylalanine. PECVD is a solvent-free approach and allows sublimation of the peptide to form dense, uniform arrays of peptide nanostructures on a variety of substrates. The PECVD deposited d-diphenylalanine nanostructures have a range of chemical and physical properties depending on the specific discharge parameters used during the deposition process. PMID:24400716

  5. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  6. Microstructure of boron nitride coated on nuclear fuels by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör; Toker, Canan

    1998-08-01

    Three nuclear fuels, pure urania, 5% and 10% gadolinia containing fuels were coated with boron nitride to improve nuclear and physical properties. Coating was done by plasma enhanced chemical vapor deposition technique by using boron trichloride and ammonia. The specimens were examined under a scanning electron microscope. Boron nitride formed a grainy structure on all fuels. Gadolinia decreased the grain size of boron nitride. The fractal dimensions of fragmentation and of area-perimeter relation were determined.

  7. Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes

    NASA Astrophysics Data System (ADS)

    Ohnaka, Hirofumi; Kojima, Yoshihiro; Kishimoto, Shigeru; Ohno, Yutaka; Mizutani, Takashi

    2006-06-01

    Single-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current-voltage (I-V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%.

  8. TOPICAL REVIEW: A review of plasma enhanced chemical vapour deposition of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Meyyappan, M.

    2009-11-01

    Plasma enhanced chemical vapour deposition (PECVD) has been widely discussed in the literature for the growth of carbon nanotubes (CNTs) and carbon nanofibres (CNFs) in recent years. Advantages claimed include lower growth temperatures relative to thermal CVD and the ability to grow individual, free-standing, vertical CNFs instead of tower-like structures or ensembles. This paper reviews the current status of the technology including equipment, plasma chemistry, diagnostics and modelling, and mechanisms. Recent accomplishments include PECVD of single-walled CNTs and growth at low temperatures for handling delicate substrates such as glass.

  9. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  10. Low-temperature in situ formation of Y-Ba-Cu-O high T sub c superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Zhao, J.; Noh, D.W.; Chern, C.; Li, Y.Q.; Norris, P.; Gallois, B.; Kear, B. )

    1990-06-04

    Highly textured, highly dense, superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} thin films with mirror-like surfaces have been prepared, {ital in} {ital situ}, at a reduced substrate temperature as low as 570 {degree}C by a remote microwave plasma-enhanced metalorganic chemical vapor deposition process (PE-MOCVD). Nitrous oxide was used as the oxidizer gas. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K. PE-MOCVD was carried out in a commercial scale MOCVD reactor.

  11. Synthesis of carbon nanowall by plasma-enhanced chemical vapor deposition method.

    PubMed

    Liu, Rulin; Chi, Yaqing; Fang, Liang; Tang, Zhensen; Yi, Xun

    2014-02-01

    Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the synthesis of carbon materials, such as diamond-like carbons (DLCs), carbon nanotubes (CNTs) and carbon nanowalls (CNWs). Advantages of PECVD are low synthesis temperature compared with thermal CVD and the ability to grow vertically, free-standing structures. Due to its self-supported property and high specific surface area, CNWs are a promising material for field emission devices and other chemical applications. This article reviews the recent process on the synthesis of CNW by the PECVD method. We briefly introduce the structure and properties of CNW with characterization techniques. Growth mechanism is also discussed to analyze the influence of plasma conditions, substrates, temperature, and other parameters to the final film, which will give a suggestion on parameter modulation for desired film. PMID:24749447

  12. MICROWAVE TECHNOLOGY CHEMICAL SYNTHESIS APPLICATIONS

    EPA Science Inventory

    Microwave-accelerated chemical syntheses in various solvents as well as under solvent-free conditions have witnessed an explosive growth. The technique has found widespread application predominantly exploiting the inexpensive unmodified household microwave (MW) ovens although th...

  13. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  14. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    NASA Astrophysics Data System (ADS)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  15. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui

    2015-08-01

    We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl2 formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D' band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  16. Nickel doping of boron carbide grown by plasma enhanced chemical vapor deposition

    SciTech Connect

    Hwang, S.; Remmes, N.B.; Dowben, P.A.; McIlroy, D.N.

    1996-07-01

    We have nickel doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadodecaborane (ortho-carborane) was used to grow the boron carbide, while nickelocene [Ni(C{sub 5}H{sub 5}){sub 2}] was used to introduce nickel into the growing film. The doping of nickel transformed a {ital p}-type, B{sub 5}C material, relative to lightly doped {ital n}-type silicon, to an {ital n}-type material. Both {ital n}-{ital n} heterojunction diodes and {ital n}-{ital p} heterojunction diodes were constructed, using as substrates {ital n}- and {ital p}-type Si(111), respectively. With sufficient partial pressures of nickelocene in the plasma reactor, diodes with characteristic tunnel diode behavior can be successfully fabricated. {copyright} {ital 1996 American Vacuum Society}

  17. Plasma-enhanced chemical vapor deposition method to coat micropipettes with diamond-like carbon

    SciTech Connect

    Kakuta, Naoto; Watanabe, Mayu; Yamada, Yukio; Okuyama, Naoki; Mabuchi, Kunihiko

    2005-07-15

    This article provides a simple method for coating glass micropipettes with diamond-like carbon (DLC) through plasma-enhanced chemical vapor deposition. The apparatus uses a cathode that is a thin-metal-coated micropipette itself and an anode that is a meshed cylinder with its cylinder axis along the micropipette length. To produce a uniform plasma and prevent a temperature increase at the tip due to ion collision concentration, we investigated the effect of the height and diameter of the meshed cylindrical anode on the plasma. Intermittent deposition is also effective for inhibiting the temperature rise and producing high quality DLC films. Measured Raman spectra and electric resistivity indicate that a DLC film suitable for use as an insulating film can be produced on the micropipette. This coating method should also be useful for other extremely small probes.

  18. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm2. The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs.

  19. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition.

    PubMed

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm(2). The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs. PMID:26666912

  20. Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Outlaw, R. A.; Hopson, P., Jr.

    1984-01-01

    The films, which are approximately 10 microns in thickness, are grown epitaxially on polished (100) NaCl substrates at 450 C by plasma enhanced chemical vapor deposition. Upon cooling, the films are separated from the substrate by differential shear stress, leaving free-standing films of Ge which can be handled. Growths are attained by nucleating at minimum plasma power for very brief intervals and then raising the power to 65 W to increase the growth rate to approximately 10 microns/h. It is found that substrate exposure to the plasma at too high a power for too long a time sputters and erodes the surface, thereby substantially degrading the nucleation process and the ultimate growths. It is noted that the free-standing films are visually specular and exhibit a high degree of crystalline order when examined by X-ray diffraction. Auger electron spectroscopy and energy dispersive analysis of X-rays reveal no detectable bulk contamination.

  1. Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach

    SciTech Connect

    Jousseaume, V.; Favennec, L.; Zenasni, A.; Passemard, G.

    2006-05-01

    Conventional Cu-ultra low K (ULK) integration schemes lead to a drastic increase of the effective dielectric constant due to porous material degradation during process steps. Although a postintegration porogen removal scheme allows overcoming these issues, only spin-on dielectrics were developed to validate this approach. In this letter, plasma-enhanced chemical-vapor deposition is used to deposit ULK dielectric (k<2.5). The precursor chemistry and the deposition conditions have been chosen to obtain a material with the required characteristics to use a postintegration porogen removal approach: porogen thermal stability up to 325 deg. C, good mechanical properties of the hybrid film, no metallic barrier diffusion in the film, and a minimal shrinkage after the porogen removal treatment.

  2. Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

    NASA Astrophysics Data System (ADS)

    Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

    2004-02-01

    A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

  3. Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride

    SciTech Connect

    Sennikov, P. G. Golubev, S. V.; Shashkin, V. I.; Pryakhin, D. A.; Drozdov, M. N.; Andreev, B. A.; Drozdov, Yu. N.; Kuznetsov, A. S.; Pohl, H.-J.

    2009-07-15

    The data on fabrication of silicon layers on various substrates by plasma enhanced chemical vapor deposition from the (silicon tetrafluoride)-hydrogen system are reported. The emission spectra of the plasma in the system are recorded. The samples were studied by the X-ray diffraction and secondary ion mass spectrometry techniques. The morphologic properties of the surface are examined, and the Raman spectra, the transmittance spectra in the infrared region, and photoluminescence spectra are recorded. The phase composition of the layers corresponds to nanocrystalline silicon, in which the dimensions of coherent-scattering grains vary with the conditions of the preparation process in the range from 3 to 9 nm. The layers exhibit intense photoluminescence at room temperature.

  4. Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

    NASA Astrophysics Data System (ADS)

    Schmidt, Marek E.; Xu, Cigang; Cooke, Mike; Mizuta, Hiroshi; Chong, Harold M. H.

    2014-04-01

    This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size {{L}_{\\text{a}}} of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance {{R}_{\\text{sq}}} of 3.73 \\text{k}\\Omega and charge carrier mobility μ of 2.49\\;\\text{c}{{\\text{m}}^{2}}\\;{{\\text{V}}^{-1}}\\;{{\\text{s}}^{-1}} are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed >85% optical transparency in the visible light spectrum.

  5. Enhanced stability of Cu-BTC MOF via perfluorohexane plasma-enhanced chemical vapor deposition.

    PubMed

    Decoste, Jared B; Peterson, Gregory W; Smith, Martin W; Stone, Corinne A; Willis, Colin R

    2012-01-25

    Metal organic frameworks (MOFs) are a leading class of porous materials for a wide variety of applications, but many of them have been shown to be unstable toward water. Cu-BTC (1,3,5 benzenetricarboxylic acid, BTC) was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane creating a hydrophobic form of Cu-BTC. It was found that the treated Cu-BTC could withstand high humidity and even submersion in water much better than unperturbed Cu-BTC. Through Monte Carlo simulations it was found that perfluorohexane sites itself in such a way within Cu-BTC as to prevent the formation of water clusters, hence preventing the decomposition of Cu-BTC by water. This PECVD of perfluorohexane could be exploited to widen the scope of practical applications of Cu-BTC and other MOFs. PMID:22239201

  6. Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities

    SciTech Connect

    Peter, S.; Guenther, M.; Hauschild, D.; Richter, F.

    2010-08-15

    The deposition of hydrogenated amorphous carbon (a-C:H) as well as hydrogenated amorphous silicon carbonitride (SiCN:H) films was investigated in view of a simultaneous realization of a minimum Young's modulus (>70 GPa), a high electrical insulation ({>=}1 MV/cm), a low permittivity and the uniform coverage of microcavities with submillimeter dimensions. For the a-C:H deposition the precursors methane (CH{sub 4}) and acetylene (C{sub 2}H{sub 2}) were used, while SiCN:H films were deposited from mixtures of trimethylsilane [SiH(CH{sub 3}){sub 3}] with nitrogen and argon. To realize the deposition of micrometer thick films with the aforementioned complex requirements at substrate temperatures {<=}200 deg. C, several plasma enhanced chemical vapor deposition methods were investigated: the capacitively coupled rf discharge and the microwave electron cyclotron resonance (ECR) plasma, combined with two types of pulsed substrate bias. SiCN:H films deposited at about 1 Pa from ECR plasmas with pulsed high-voltage bias best met the requirements. Pulsed biasing with pulse periods of about 1 {mu}s and amplitudes of about -2 kV was found to be most advantageous for the conformal low temperature coating of the microtrenches, thereby ensuring the required mechanical and insulating film properties.

  7. Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Desta, Yohannes; Goettert, Jost; Lee, G. S.; Ajmera, P. K.

    2005-07-01

    Surface modification of silicon-containing fluorocarbon (SiCF) films achieved by wet chemical treatments and through x-ray irradiation is examined. The SiCF films were prepared by plasma-enhanced chemical vapor deposition, using gas precursors of tetrafluoromethane and disilane. As-deposited SiCF film composition was analyzed by x-ray photoelectron spectroscopy. Surface modification of SiCF films utilizing n-lithiodiaminoethane wet chemical treatment is discussed. Sessile water-drop contact angle changed from 95°+/-2° before treatment to 32°+/-2° after treatment, indicating a change in the film surface characteristics from hydrophobic to hydrophilic. For x-ray irradiation on the SiCF film with a dose of 27.4 kJ/cm3, the contact angle of the sessile water drop changed from 95°+/-2° before radiation to 39°+/-3° after x-ray exposure. The effect of x-ray exposure on chemical bond structure of SiCF films is studied using Fourier transform infrared measurements. Electroless Cu deposition was performed to test the applicability of the surface modified films. The x-ray irradiation method offers a unique advantage in making possible surface modification in a localized area of high-aspect-ratio microstructures. Fabrication of a Ti-membrane x-ray mask is introduced here for selective surface modification using x-ray irradiation.

  8. Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yoonyoung; Ajmera, P. K.; Lee, G. S.; Singh, Varshni

    2005-09-01

    Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2 2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4 1.78 GPa and in the range 11.6 23.2 MPa of compressive stress.

  9. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    PubMed

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first. PMID:21875044

  10. Fluorinated carboxylic membranes deposited by plasma enhanced chemical vapour deposition for fuel cell applications

    NASA Astrophysics Data System (ADS)

    Thery, J.; Martin, S.; Faucheux, V.; Le Van Jodin, L.; Truffier-Boutry, D.; Martinent, A.; Laurent, J.-Y.

    Among the fuel cell technologies, the polymer electrolyte membrane fuel cells (PEMFCs) are particularly promising because they are energy-efficient, clean, and fuel-flexible (i.e., can use hydrogen or methanol). The great majority of PEM fuel cells rely on a polymer electrolyte from the family of perfluorosulfonic acid membranes, nevertheless alternative materials are currently being developed, mainly to offer the alternative workout techniques which are required for the portable energy sources. Plasma polymerization represents a good solution, as it offers the possibility to deposit thin layer with an accurate and homogeneous thickness, even on 3D surfaces. In this paper, we present the results for the growth of proton conductive fluoro carboxylic membranes elaborated by plasma enhanced chemical vapour deposition. These membranes present conductivity values of the same order than the one of Nafion ®. The properties of the membrane, such as the chemical composition, the ionic conductivity, the swelling behaviour and the permeability were correlated to the plasma process parameters. The membranes were integrated in fuel cells on porous substrates and we present here the results regarding the barrier effect and the power output. Barrier effect similar to those of 40 μm Nafion ® layers was reached for 10 μm thick carboxylic membranes. Power outputs around 3 mW cm -2 were measured. We discuss the results regarding the gas barrier effect and the power outputs.

  11. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.

    PubMed

    Hou, Wen Chi; Hong, Franklin Chau-Nan

    2009-02-01

    This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 degrees C. PMID:19417353

  12. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  13. Passivation of aluminum nanoparticles by plasma-enhanced chemical vapor deposition for energetic nanomaterials.

    PubMed

    Shahravan, Anaram; Desai, Tapan; Matsoukas, Themis

    2014-05-28

    We have produced passivating coatings on 80-nm aluminum particles by plasma-enhanced chemical vapor deposition (PECVD). Three organic precursors--isopropyl alcohol, toluene, and perfluorodecalin--were used to fabricate thin films with thicknesses ranging from 5 nm to 30 nm. The coated samples and one untreated sample were exposed to 85% humidity at 25 °C for two months, and the active Al content was determined by thermogravimetric analysis (TGA) in the presence of oxygen. The results were compared with an uncoated sample stored in a glovebox under argon for the same period. We find that all three coatings provide protection against humidity, compared to the control, and their efficacy ranks in the following order: isopropyl alcohol < toluene < perfluorodecalin. This order also correlates with increasing water contact angle of the three solid coatings. The amount of heat released in the oxidation, measured by differential scanning calorimetry (DSC), was found to increase in the same order. Perfluorodecalin resulted in providing the best protection, and it produced the maximum enthalpy of combustion, ΔH = 4.65 kJ/g. This value is higher than that of uncoated aluminum stored in the glovebox, indicating that the coatings promote more complete oxidation of the core. Overall, we conclude that the plasma polymer coatings of this study are suitable passivating thin film for aluminum nanoparticles by providing protection against oxidation while facilitating the complete oxidation of the metallic core at elevated temperature. PMID:24787245

  14. Plasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane

    SciTech Connect

    Park, Sung-Gyu; Rhee, Shi-Woo

    2006-03-15

    Carbon-doped silicon oxide (SiCOH) low-k films were deposited with plasma enhanced chemical vapor deposition (PECVD) using divinyldimethylsilane (DVDMS) with two vinyl groups and tetravinylsilane (TVS) with four vinyl groups compared with vinyltrimethylsilane (VTMS) with one vinyl group. With more vinyl groups in the precursor, due to the crosslinking of the vinyl groups, the film contains more of an organic phase and organic phase became less volatile. It was confirmed that the deposition rate, refractive index, and k value increase with more vinyl groups in the precursor molecule. After annealing, the SiCOH films deposited with DVDMS and TVS showed a low dielectric constant of 2.2 and 2.4 at optimum conditions, respectively. In both cases, the annealed film had low leakage current density (J=6.7x10{sup -7} A/cm{sup 2} for SiCOH film of DVDMS and J=1.18x10{sup -8} A/cm{sup 2} for SiCOH film of TVS at 1 MV/cm) and relatively high breakdown field strength (E>4.0 MV/cm at 1 mA/cm{sup 2}), which is comparable to those of PECVD SiO{sub 2}.

  15. Conformal encapsulation of three-dimensional, bioresorbable polymeric scaffolds using plasma-enhanced chemical vapor deposition.

    PubMed

    Hawker, Morgan J; Pegalajar-Jurado, Adoracion; Fisher, Ellen R

    2014-10-21

    Bioresorbable polymers such as poly(ε-caprolactone) (PCL) have a multitude of potential biomaterial applications such as controlled-release drug delivery and regenerative tissue engineering. For such biological applications, the fabrication of porous three-dimensional bioresorbable materials with tunable surface chemistry is critical to maximize their surface-to-volume ratio, mimic the extracellular matrix, and increase drug-loading capacity. Here, two different fluorocarbon (FC) precursors (octofluoropropane (C3F8) and hexafluoropropylene oxide (HFPO)) were used to deposit FC films on PCL scaffolds using plasma-enhanced chemical vapor deposition (PECVD). These two coating systems were chosen with the intent of modifying the scaffold surfaces to be bio-nonreactive while maintaining desirable bulk properties of the scaffold. X-ray photoelectron spectroscopy showed high-CF2 content films were deposited on both the exterior and interior of PCL scaffolds and that deposition behavior is PECVD system specific. Scanning electron microscopy data confirmed that FC film deposition yielded conformal rather than blanket coatings as the porous scaffold structure was maintained after plasma treatment. Treated scaffolds seeded with human dermal fibroblasts (HDF) demonstrate that the cells do not attach after 72 h and that the scaffolds are noncytotoxic to HDF. This work demonstrates conformal FC coatings can be deposited on 3D polymeric scaffolds using PECVD to fabricate 3D bio-nonreactive materials. PMID:25247481

  16. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    PubMed

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results. PMID:26682441

  17. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  18. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  19. The augmented saddle field discharge characteristics and its applications for plasma enhanced chemical vapour deposition

    SciTech Connect

    Wong, Johnson; Yeghikyan, Davit; Kherani, Nazir P.

    2013-04-07

    A high ion flux parallel electrode plasma is proposed and studied in its DC configuration. By cascading a diode source region which supplies electrons and a saddle field region where these seed electrons are energized and amplified, the energy of ion bombardment on the substrate can be decoupled from the plasma density. The sufficiently large density of electrons and holes in the vicinity of the substrate raises the possibility to perform plasma enhanced chemical vapour deposition on insulating materials, at low sheath voltages (around 40 V in the configuration studied), at low temperatures in which the surface mobility of film growth species may be provided by the bombardment of moderate energy ions. As a benchmarking exercise, experiments are carried out on silane discharge characteristics and deposition of hydrogenated amorphous silicon (a-Si:H) on both silicon wafer and glass. The films grown at low anode voltages have excellent microstructures with predominantly monohydride bonds, sharp band tails, but relatively high integrated defect density in the mid 10{sup 16}/cm{sup 3} range for the particular substrate temperature of 180 Degree-Sign C, indicating that further optimizations are necessary if the electrode configuration is to be used to create a-Si:H devices.

  20. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  1. The evolution of carbon nanotubes during their growth by plasma enhanced chemical vapor deposition.

    PubMed

    Wang, Hengzhi; Ren, Z F

    2011-10-01

    During the growth of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD), plasma etching is the crucial factor that determines the growth mode and alignment of the CNTs. Focusing on a thin catalyst coating (Ni = 5 nm), this study finds that the CNT growth by PECVD goes through three stages from randomly entangled (I-CNTs) to partially aligned (II-CNTs) to fully aligned (III-CNTs). The I-CNTs and II-CNTs are mostly etched away by the plasma as time goes by ending up with III-CNTs as the only product when growth time is long enough. However, with a thickness of the catalyst coating of 10 nm or more, neither I-CNTs nor II-CNTs are produced, but III-CNTs are the only type of CNTs grown during the whole growth process. During the growth of III-CNTs, the catalyst particles (Ni) stay on the tips of each of the aligned CNTs and act as a 'safety helmet' to protect the CNTs from plasma ion bombardment. On the other hand, it is also the plasma that limits the growth of III-CNTs, since the plasma eventually etches all the catalytic particles out and stops the growth. PMID:21911923

  2. The evolution of carbon nanotubes during their growth by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Hengzhi; Ren, Z. F.

    2011-10-01

    During the growth of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD), plasma etching is the crucial factor that determines the growth mode and alignment of the CNTs. Focusing on a thin catalyst coating (Ni = 5 nm), this study finds that the CNT growth by PECVD goes through three stages from randomly entangled (I-CNTs) to partially aligned (II-CNTs) to fully aligned (III-CNTs). The I-CNTs and II-CNTs are mostly etched away by the plasma as time goes by ending up with III-CNTs as the only product when growth time is long enough. However, with a thickness of the catalyst coating of 10 nm or more, neither I-CNTs nor II-CNTs are produced, but III-CNTs are the only type of CNTs grown during the whole growth process. During the growth of III-CNTs, the catalyst particles (Ni) stay on the tips of each of the aligned CNTs and act as a 'safety helmet' to protect the CNTs from plasma ion bombardment. On the other hand, it is also the plasma that limits the growth of III-CNTs, since the plasma eventually etches all the catalytic particles out and stops the growth.

  3. Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets.

    PubMed

    Bo, Zheng; Yang, Yong; Chen, Junhong; Yu, Kehan; Yan, Jianhua; Cen, Kefa

    2013-06-21

    Vertically oriented graphene (VG) nanosheets have attracted growing interest for a wide range of applications, from energy storage, catalysis and field emission to gas sensing, due to their unique orientation, exposed sharp edges, non-stacking morphology, and huge surface-to-volume ratio. Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a key method for VG synthesis; however, controllable growth of VG with desirable characteristics for specific applications remains a challenge. This paper attempts to summarize the state-of-the-art research on PECVD growth of VG nanosheets to provide guidelines on the design of plasma sources and operation parameters, and to offer a perspective on outstanding challenges that need to be overcome to enable commercial applications of VG. The review starts with an overview of various types of existing PECVD processes for VG growth, and then moves on to research on the influences of feedstock gas, temperature, and pressure on VG growth, substrate pretreatment, the growth of VG patterns on planar substrates, and VG growth on cylindrical and carbon nanotube (CNT) substrates. The review ends with a discussion on challenges and future directions for PECVD growth of VG. PMID:23670071

  4. Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets

    NASA Astrophysics Data System (ADS)

    Bo, Zheng; Yang, Yong; Chen, Junhong; Yu, Kehan; Yan, Jianhua; Cen, Kefa

    2013-05-01

    Vertically oriented graphene (VG) nanosheets have attracted growing interest for a wide range of applications, from energy storage, catalysis and field emission to gas sensing, due to their unique orientation, exposed sharp edges, non-stacking morphology, and huge surface-to-volume ratio. Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a key method for VG synthesis; however, controllable growth of VG with desirable characteristics for specific applications remains a challenge. This paper attempts to summarize the state-of-the-art research on PECVD growth of VG nanosheets to provide guidelines on the design of plasma sources and operation parameters, and to offer a perspective on outstanding challenges that need to be overcome to enable commercial applications of VG. The review starts with an overview of various types of existing PECVD processes for VG growth, and then moves on to research on the influences of feedstock gas, temperature, and pressure on VG growth, substrate pretreatment, the growth of VG patterns on planar substrates, and VG growth on cylindrical and carbon nanotube (CNT) substrates. The review ends with a discussion on challenges and future directions for PECVD growth of VG.

  5. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-05-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called "pSiCOH," using a production 200mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si -CH3 species, and lower k is shown to correlate with increased concentration of Si -CH3. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CHx) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CHx) content and the presence of C O and C C functional groups.

  6. Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers

    NASA Astrophysics Data System (ADS)

    Cao, Zhiqiang; Zhang, Tong-Yi; Zhang, Xin

    2005-05-01

    Plasma-enhanced chemical-vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and microelectromechanical systems (MEMS) to form electrical and/or mechanical components. In this paper, a nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young's modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. Some microbridges were subjected to rapid thermal annealing (RTA) at a temperature of 400 °C, 600 °C, or 800 °C to simulate the thermal process in the device fabrication. The results showed that the as-deposited PECVD SiOx films had a residual stress of -155±17MPa and a Young's modulus of 74.8±3.3GPa. After the RTA, Young's modulus remained relatively unchanged at around 75 GPa, however, significant residual stress hysteresis was found in all the films. A microstructure-based mechanism was then applied to explain the experimental results of the residual stress changes in the PECVD SiOx films after the thermal annealing.

  7. Plasma effects in aligned carbon nanoflake growth by plasma-enhanced hot filament chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, B. B.; Zheng, K.; Cheng, Q. J.; Ostrikov, K.

    2015-01-01

    Carbon nanofilms are directly grown on silicon substrates by plasma-enhanced hot filament chemical vapor deposition in methane environment. It is shown that the nanofilms are composed of aligned carbon nanoflakes by extensive investigation of experimental results of field emission scanning electron microscopy, micro-Raman spectroscopy and transmission electron microscopy. In comparison with the graphene-like films grown without plasmas, the carbon nanoflakes grow in an alignment mode and the growth rate of the films is increased. The effects of the plasma on the growth of the carbon nanofilms are studied. The plasma plays three main effects of (1) promoting the separation of the carbon nanoflakes from the silicon substrate, (2) accelerating the motion of hydrocarbon radicals, and (3) enhancing the deposition of hydrocarbon ions onto the substrate surface. Due to these plasma-specific effects, the carbon nanofilms can be formed from the aligned carbon nanoflakes with a high rate. These results advance our knowledge on the synthesis, properties and applications of graphene-based materials.

  8. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  9. Thermal Conductivity of Nanocrystalline Silicon Prepared by Plasma-Enhanced Chemical-Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Jugdersuren, Battogtokh; Liu, Xiao; Kearney, Brian; Queen, Daniel; Metcalf, Thomas; Culbertson, James; Chervin, Christopher; Katz, Michael; Stroud, Rhonda

    Nanocrystallization by ball milling has been used successfully to reduce the thermal conductivity of silicon-germanium alloys (SiGe) and turn them into useful thermoelectric materials at a temperature of a few hundred degrees C. Currently the smallest grain sizes in nanocrystalline SiGe are in the 10 nm range. Germanium is added to scatter short wavelength phonons by impurity scattering. In this work, we report a record low thermal conductivity in nanocrystalline silicon prepared by plasma-enhanced chemical-vapor deposition. By varying hydrogen to silane ratio, we can vary the average grain sizes from greater than 10 nm down to 3 nm, as determined by both the high resolution transmission electron microscopy and X-ray diffraction. The values of thermal conductivity, as measured by the 3 ω technique, can be correspondingly modulated from that of ball-milled nanocrystalline SiGe to a record low level of 0.3 W/mK at room temperature. This low thermal conductivity is only about 1/3 of the minimum thermal conductivity limit of silicon. Possible causes of such a large reduction are discussed. Work supported by the Office of Naval Research.

  10. Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating.

    PubMed

    Cogan, Stuart F; Edell, David J; Guzelian, Andrew A; Ping Liu, Ying; Edell, Robyn

    2003-12-01

    Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosphate-buffered saline (PBS, pH 7.4). Low leakage currents of <10(-11) A were observed over a +/-5-V bias. The electronic resistivity of a-SiC was 3 x 10(13) Omega-cm. Dissolution rates of a-SiC in PBS at 37 and 90 degrees C were determined from changes in infrared absorption band intensities and compared with those of silicon nitride formed by low-pressure chemical vapor deposition (LPCVD). Dissolution rates of LPCVD silicon nitride were 2 nm/h and 0.4 nm/day at 90 and 37 degrees C, respectively, while a-SiC had a dissolution rate of 0.1 nm/h at 90 degrees C and no measurable dissolution at 37 degrees C. Biocompatibility was assessed by implanting a-SiC-coated quartz discs in the subcutaneous space of the New Zealand White rabbit. Histological evaluation showed no chronic inflammatory response and capsule thickness was comparable to silicone or uncoated quartz controls. Amorphous SiC-coated microelectrodes were implanted in the parietal cortex for periods up to 150 days and the cortical response evaluated by histological evaluation of neuronal viability at the implant site. The a-SiC was more stable in physiological saline than LPCVD Si(3)N(4) and well tolerated in the cortex. PMID:14613234

  11. CHEMICAL SYNTHESIS & TRANSFORMATIONS USING MICROWAVES

    EPA Science Inventory

    A historical account of the utility of microwaves in a variety of chemical synthesis applications will be presented, including a solvent-free strategy that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of recyclable mineral supports such...

  12. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    SciTech Connect

    Bartlome, Richard De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe; Amanatides, Eleftherios; Mataras, Dimitrios

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  13. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor depositiona)

    NASA Astrophysics Data System (ADS)

    Bartlome, Richard; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe; Amanatides, Eleftherios; Mataras, Dimitrios

    2015-05-01

    We clarify the difference between the SiH4 consumption efficiency η and the SiH4 depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH4 consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH4 concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH4 concentration in the plasma cp, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH4 density measurements throughout the ignition and the termination of a plasma.

  14. Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

    SciTech Connect

    George, M. A.; Chandra, H.; Morse, P.; Madocks, J.

    2009-07-15

    In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP trade mark sign ) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO{sub 2} and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam Source (PBS trade mark sign ) is a remote plasma source that is more versatile for deposition on not only insulating flexible substrates but also conductive or rigid substrates for deposition of thin films that are sensitive to the high ion bombardment flux inherent to the PDP trade mark sign technology. The authors have developed PBS thin film processes in our laboratory for deposition of SiO{sub 2}, SiC:O, SiN:C, SiN:H, ZnO, FeO{sub x}, and Al{sub 2}O{sub 3}. [M. A. George, Conference Proceedings of the Association of Industrial Metallizers, Coaters, and Laminators (AIMCAL), 2007 (unpublished)]. The authors discuss the design of the patented sources, plasma physics, and chemistry of the deposited thin films.

  15. Analysis of photoluminescence background of Raman spectra of carbon nanotips grown by plasma-enhanced chemical vapor deposition

    SciTech Connect

    Wang, B. B.; Ostrikov, K.; Tsakadze, Z. L.; Xu, S.

    2009-07-01

    Carbon nanotips with different structures were synthesized by plasma-enhanced hot filament chemical vapor deposition and plasma-enhanced chemical vapor deposition using different deposition conditions, and they were investigated by scanning electron microscopy and Raman spectroscopy. The results indicate that the photoluminescence background of the Raman spectra is different for different carbon nanotips. Additionally, the Raman spectra of the carbon nanotips synthesized using nitrogen-containing gas precursors show a peak located at about 2120 cm{sup -1} besides the common D and G peaks. The observed difference in the photoluminescence background is related to the growth mechanisms, structural properties, and surface morphology of a-C:H and a-C:H:N nanotips, in particular, the sizes of the emissive tips.

  16. Superconducting YBa sub 2 Cu sub 3 O sub 7 minus x thin films on silver substrates by in situ plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Zhao, J.; Li, Y.Q.; Chern, C.S.; Norris, P.; Gallois, B.; Kear, B.; Wessels, B.W. )

    1991-01-07

    An {ital in} {ital situ} microwave plasma-enhanced metalorganic chemical vapor deposition process was used to fabricate highly {ital c}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films on metallic Ag substrates. The films were deposited at a reduced substrate temperature of 740 {degree}C in about 270 Pa of N{sub 2}O ambient. Magnetic susceptibilities versus temperature of the as-deposited films show attainment of zero resistance of 85 K and composition of single (high {ital T}{sub {ital c}}) phase. X-ray diffraction measurements reveal that the films deposited at 740 {degree}C have highly preferential orientation of the crystallite {ital c} axes perpendicular to the substrate surface.

  17. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition.

    PubMed

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene's semiconducting properties is considered to be key to its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into the graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties. PMID:23203220

  18. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

    SciTech Connect

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene’s semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

  19. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Barranco, A.; Cotrino, J.; Yubero, F.; Espinós, J. P.; González-Elipe, A. R.

    2004-07-01

    Silicon dioxide thin films with variable and controlled porosity have been prepared at room temperature by plasma enhanced chemical vapor deposition in an electron cyclotron resonance microwave reactor with a downstream configuration. The procedure consists of the deposition of successive cycles consisting of a sacrificial organic-polymeric layer and, afterward, a silicon dioxide layer. Toluene and oxygen are used as precursors of the organic layers and Si(CH3)3Cl and oxygen for the SiO2. During deposition of the latter, the organic layer is simultaneously burned off. In these conditions, the release of gases produced by oxidation of the organic-polymeric layer take place while the oxide layer is being deposited. Thus, modification of the nucleation and growing mechanism of the silicon oxide thin film take place. The porosity of the final porous SiO2 thin films increases with the thickness of the sacrificial organic layer. The porous SiO2 films prepared with the aforementioned method are free of carbon and chlorine contamination as confirmed by Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. Depending on their porosity, the SiO2 thin films are either transparent or scattered visible light. The former have refractive index lower than that of thermal silicon dioxide and the latter show membranelike behavior in gas diffusion experiments. All the samples have good adhesion to the substrates used for the deposition, either polished Si wafer, glass plates, or standard porous supports. They have columnar microstructure, as determined by scanning electron microscopy. A preliminary ultraviolet-visible characterization of the optically transparent thin films reveals that transmission of light through glass increases by 7%-8% when the porous silica is deposited on this substrate. These films prove to be very efficient as antireflective coatings and are of interest for photovoltaic and similar applications

  20. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  1. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  2. Spectroscopic ellipsometry study of hydrogenated amorphous silicon carbon alloy films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Basa, D. K.; Abbate, G.; Ambrosone, G.; Marino, A.; Coscia, U.

    2010-01-15

    The optical properties of the hydrogenated amorphous silicon carbon alloy films, prepared by plasma enhanced chemical vapor deposition technique from silane and methane gas mixture diluted in helium, have been investigated using variable angle spectroscopic ellipsometry in the photon energy range from 0.73 to 4.59 eV. Tauc-Lorentz model has been employed for the analysis of the optical spectra and it has been demonstrated that the model parameters are correlated with the carbon content as well as to the structural properties of the studied films.

  3. On the low-temperature growth mechanism of single walled carbon nanotubes in plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shariat, M.; Shokri, B.; Neyts, E. C.

    2013-12-01

    Despite significant progress in single walled carbon nanotube (SWCNT) production by plasma enhanced chemical vapor deposition (PECVD), the growth mechanism in this method is not clearly understood. We employ reactive molecular dynamics simulations to investigate how plasma-based deposition allows growth at low temperature. We first investigate the SWCNT growth mechanism at low and high temperatures under conditions similar to thermal CVD and PECVD. We then show how ion bombardment during the nucleation stage increases the carbon solubility in the catalyst at low temperature. Finally, we demonstrate how moderate energy ions sputter amorphous carbon allowing for SWCNT growth at 500 K.

  4. Low-Temperature Growth of Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kojima, Yoshihiro; Kishimoto, Shigeru; Mizutani, Takashi

    2007-12-01

    Carbon nanotubes (CNTs) have been successfully grown at a temperature as low as 400 °C by grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The grid and a thin double-layer catalyst of Fe (1 nm)/Ti (1 nm) were effective in growing the CNTs. The growth rates were 10 nm/min at 400 °C and 10 μm/min at 600 °C. The intensity ratios between G-peak and D-peak (G/D ratio) of the Raman scattering spectroscopy were almost the same for the CNTs grown at temperatures between 400 and 600 °C.

  5. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

    PubMed

    Podhorodecki, A; Zatryb, G; Misiewicz, J; Wojcik, J; Wilson, P R J; Mascher, P

    2012-11-30

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature. PMID:23110801

  6. Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method.

    PubMed

    Choi, Eun Chang; Park, Yong Seob; Hong, Byungyou

    2009-01-01

    Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, transistors, and sensors. The growth of CNTs can be explained by interaction between small carbon patches and the metal catalyst. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC films were observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate. PMID:19318258

  7. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    SciTech Connect

    Woehrl, Nicolas Schulz, Stephan; Ochedowski, Oliver; Gottlieb, Steven; Shibasaki, Kosuke

    2014-04-15

    A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  8. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H2/CH4/B2H6 plasmas (99% of H2 and 1% of CH4, with 0-100ppm of B2H6 added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23Wcm-3 average microwave power density values), and the emission spectra used for studies reported here are B(S1/22-P1/2,3/202) and BH [AΠ1-XΣ+1(0,0)]. Variations of their respective emission intensities as a function of the ratio B /C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (Tg, Te, and ne) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BHx+H ↔BHx -1+H2 (x=1-3) by analogy with the well-known equilibrium CHx+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BHx+C2H2 (x =0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary, [BH] and [B] drop off in contrast to [BH2], which shows little decrease, and [BH3], which shows little increase, in this region.

  9. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    NASA Astrophysics Data System (ADS)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  10. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    DOEpatents

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  11. Cell proliferation on modified DLC thin films prepared by plasma enhanced chemical vapor deposition.

    PubMed

    Stoica, Adrian; Manakhov, Anton; Polčák, Josef; Ondračka, Pavel; Buršíková, Vilma; Zajíčková, Renata; Medalová, Jiřina; Zajíčková, Lenka

    2015-01-01

    Recently, diamondlike carbon (DLC) thin films have gained interest for biological applications, such as hip and dental prostheses or heart valves and coronary stents, thanks to their high strength and stability. However, the biocompatibility of the DLC is still questionable due to its low wettability and possible mechanical failure (delamination). In this work, DLC:N:O and DLC: SiOx thin films were comparatively investigated with respect to cell proliferation. Thin DLC films with an addition of N, O, and Si were prepared by plasma enhanced CVD from mixtures of methane, hydrogen, and hexamethyldisiloxane. The films were optically characterized by infrared spectroscopy and ellipsometry in UV-visible spectrum. The thickness and the optical properties were obtained from the ellipsometric measurements. Atomic composition of the films was determined by Rutherford backscattering spectroscopy combined with elastic recoil detection analysis and by x-ray photoelectron spectroscopy. The mechanical properties of the films were studied by depth sensing indentation technique. The number of cells that proliferate on the surface of the prepared DLC films and on control culture dishes were compared and correlated with the properties of as-deposited and aged films. The authors found that the level of cell proliferation on the coated dishes was high, comparable to the untreated (control) samples. The prepared DLC films were stable and no decrease of the biocompatibility was observed for the samples aged at ambient conditions. PMID:25967153

  12. Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor.

    PubMed

    Remolina, A; Monroy, B M; García-Sánchez, M F; Ponce, A; Bizarro, M; Alonso, J C; Ortiz, A; Santana, G

    2009-06-17

    Polymorphous silicon thin films (pm-Si) have been deposited from mixtures of dichlorosilane and hydrogen, using argon as the diluting gas by plasma-enhanced chemical vapor deposition. The deposition conditions were chosen to simultaneously obtain both Si nanocrystallites and an amorphous silicon matrix in the as-grown samples. High resolution transmission electron microscopy studies show the crystallinity of Si domains whose dimensions are in the interval of 2-14 nm. The surface passivation state of the silicon nanocrystals was inferred from Fourier transform infrared spectroscopy analysis. Two optical absorption edges, corresponding to the amorphous matrix and the Si nanocrystals, were observed for all the pm-Si thin films. Intense visible photoluminescence was observed for the as-grown samples. The possibility of using these thin films for the down-conversion effect in silicon solar cells is discussed. PMID:19471076

  13. Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

    NASA Astrophysics Data System (ADS)

    Mishina, Ken; Ogishi, Atsufumi; Ueno, Kiyoshi; Jonai, Sachiko; Ikeno, Norihiro; Saruwatari, Tetsuya; Hara, Kohjiro; Ogura, Atsushi; Yamazaki, Toshiharu; Doi, Takuya; Shinohara, Makoto; Masuda, Atsushi

    2015-08-01

    The antireflection coating (ARC) on crystalline silicon solar cells plays an important role in preventing potential-induced degradation (PID). In a previous work, we reported that the module, which has an ARC prepared by plasma-enhanced chemical-vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with a constant conventional refractive index (RI). In this work, we report further investigation of the high-PID-resistant ARC. The results indicate that the high-PID resistant ARC had high conductivity, high Si-H bond density, and low N-H bond density. Furthermore, both higher PID resistance and higher conversion efficiency are achieved using an ARC of double or triple layers comprising stacked silicon nitride layers of different RI than those of a conventional single-layer ARC.

  14. Growth of carbon nanotubes (CNTs) on metallic underlayers by diffusion plasma-enhanced chemical vapour deposition (DPECVD)

    NASA Astrophysics Data System (ADS)

    Kim, S. M.; Gangloff, L.

    2009-10-01

    Here, we demonstrate the low-temperature (480-612 °C) synthesis of carbon nanotubes (CNTs) on different metallic underlayers (i.e., NiV, Ir, Ag, Pt, W, and Ta) using diffusion (dc) plasma-enhanced (~20 W, -600 V) chemical vapour deposition (DPECVD). The catalyst used is bi-layered Fe/Al and the feedstock used is a mixture of C 2H 2 and NH 3 (1:4). The crucial component is the diffusion of radical ions and hydrogen generated such as H 2/H +/H 2+/NH 3+/CH 2+/C 2H 2+ (which are confirmed by in-situ mass spectroscopy) from the nozzle, where it is inserted for most effective plasma diffusion between a substrate and a gas distributor.

  15. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    PubMed

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices. PMID:27181294

  16. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films

    NASA Astrophysics Data System (ADS)

    Kato, Hiromitsu; Nango, Tomohiro; Miyagawa, Takeshi; Katagiri, Takahiro; Seol, Kwang Soo; Ohki, Yoshimichi

    2002-07-01

    Deposition of hafnium silicate films with various hafnium contents was tried by plasma-enhanced chemical vapor deposition using tetraethoxysilane and a hafnium alkoxide. From x-ray photoelectron spectroscopy, the deposited films are confirmed to be silicate with Hf-O-Si bonds but without any Hf-Si bonds. The permittivity calculated from the capacitance of the accumulation layer increases monotonically with an increase in the hafnium content, whereas the optical band gap energy estimated from vacuum ultraviolet absorption spectra decreases. Similar results were obtained from zirconium silicate films deposited using tetraethoxysilane and a zirconium alkoxide. If we compare the films with the same hafnium or zirconium content, the hafnium silicate exhibits a higher permittivity and a larger band gap energy than the zirconium silicate.

  17. Formation of a Si Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures

    NASA Astrophysics Data System (ADS)

    Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Puzzer, T.; Pink, E.; Conibeer, G.

    2008-07-01

    This work reports on the crystallization of α-Si3N4, β-Si3N4, and silicon in plasma enhanced chemical vapour deposition silicon nitride films grown with SiH4 and NH3 at 400C and annealed at 1150C. Nanometric multilayer structures, composed of alternating layers of silicon nitride and silicon-rich nitride, were used as the starting material. The final product is a thin-film Si-Si3N4 nanocomposite. The formation of this composite is verified using glancing incidence X-ray diffraction, transmission electron microscopy and Fourier transform infra-red spectroscopy. Annealing investigations indicate that the multilayer structure plays a key role in the formation of this composite and for the relatively low temperature formation of α- and β-Si3N4 nanocrystals.

  18. On the nature of carbon nitride nanocrystals formed by plasma enhanced chemical vapor deposition and rapid thermal annealing

    NASA Astrophysics Data System (ADS)

    Lim, S. F.; Wee, A. T. S.; Lin, J.; Chua, D. H. C.; Huan, C. H. A.

    1999-06-01

    Using high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy, carbon nitride nanocrystals were observed in films deposited by RF plasma-enhanced chemical vapor deposition (RF-PECVD) followed by a rapid thermal annealing (RTA) to 1000°C. The (30±10) nm crystals are embedded in an amorphous matrix, and the interplanar lattice spacings suggest that the crystals are the hexagonal β-carbon nitride phase. Investigations using Fourier transform infra-red spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) of the films show that RTA increases the sp 3 content of the films but decreases the CN (nitrile), N-H and C-H content.

  19. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    NASA Astrophysics Data System (ADS)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0–600 s). Silicon nanopores within a 50–400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  20. Preparation of glasses in the Ge-S-I system by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mochalov, L. A.; Churbanov, M. F.; Velmuzhov, A. P.; Lobanov, A. S.; Kornev, R. A.; Sennikov, G. P.

    2015-08-01

    The glass samples of the Ge-S-I system were synthesized by plasma-enhanced chemical vapor deposition (PECVD) in a low-temperature non-equilibrium RF-plasma discharge. The vapors of S and GeI4 were the initial substances. The process was carried out in a flowing quartz reactor at the walls temperature of 300-500 °C and the total pressure range of 1.9-22.8 Torr. The phase and the elemental compositions of the deposited glassy batches were investigated. The glasses obtained by melting of the solid reaction products were homogenized in the evacuated quartz glass ampoule and they were studied by DSC, X-ray microanalysis, and atomic emission spectroscopy. The proposed method allows to prepare the glasses of the system Ge-S-I with Si content less than 3 ṡ 10-5 wt.%.

  1. Growth kinetics of low temperature single-wall and few walled carbon nanotubes grown by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Jiménez, J.; Granier, A.

    2007-03-01

    Single-wall, double walled or few walled nanotubes (FWNT) are grown by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) at temperature as low as 600 °C. Most of these structures are isolated and self-oriented perpendicular to the substrate. The growth mechanism observed for single-wall and few walled (less than seven walls) nanotubes is the “base-growth” mode. Their grow kinetics is investigated regarding two parameters namely the growth time and the synthesis temperature. It is shown that nucleation and growth rate is correlated with the number of walls into FWNT. It also provides an evidence of a critical temperature for FWNT synthesis.

  2. Synthesis and growth mechanism of Fe-catalyzed carbon nanotubes by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Feng, Tao; Cheng, Xinhong; Dai, Lijuan; Cao, Gongbai; Jiang, Bingyao; Wang, Xi; Liu, Xianghuai; Zou, Shichang

    2006-03-01

    Plasma-enhanced chemical vapor deposition (PECVD) was used to grow Fe-catalyzed carbon nanotubes (CNTs). The nanotubes had a uniform diameter in the range of about 10-20 nm. A base growth mode was responsible for the CNTs growth using a mixture of H 2 (60 sccm) and C 2H 2 (15 sccm). For a mixture of H 2 (100 sccm) and C 2H 2 (25 sccm), a complicated growth mechanism took place involving both the base growth and the tip growth. X-ray photoelectron spectroscopy measurements revealed that the grown CNTs contained C-H covalent bonds and Fe-C bonds located at the interface between them and the substrates. The factors determining the growth mechanism of CNTs are discussed and their growth mechanisms with the different gas ratios are suggested.

  3. In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

    NASA Astrophysics Data System (ADS)

    Jönsson, M.; Nerushev, O. A.; Campbell, E. E. B.

    2007-08-01

    In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 µm min-1) and then drops off rapidly to reach a steady level (2 µm min-1) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer.

  4. Monitoring and analyses of substrate surface in first stages of graphene growth in plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kawano, Masahiro; Yamada, Shunya; Hayashi, Yasuaki

    2016-06-01

    In situ ellipsometry was carried out as well as ex situ measurements by scanning electron microscopy and Raman spectroscopy for the analyses of substrate surface in the first stage of graphene growth in plasma-enhanced chemical vapor deposition. Evolutions of the ellipsometric parameters Ψ and Δ were precisely measured during the growth of graphene with the sensitivity far less than 1 nm in film thickness. By the fitting of the experimentally obtained trajectory of ellipsometric parameters on the Ψ–Δ coordinate plane to that of the calculated ones, we confirmed that the graphite volume fraction decreased with growth after a dense graphite material initially formed. This suggests that carbon nanowalls grew on a thin graphitic layer.

  5. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    NASA Technical Reports Server (NTRS)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  6. Deposition kinetics and characterization of stable ionomers from hexamethyldisiloxane and methacrylic acid by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Urstöger, Georg; Resel, Roland; Koller, Georg; Coclite, Anna Maria

    2016-04-01

    A novel ionomer of hexamethyldisiloxane and methacrylic acid was synthesized by plasma enhanced chemical vapor deposition (PECVD). The PECVD process, being solventless, allows mixing of monomers with very different solubilities, and for polymers formed at high deposition rates and with high structural stability (due to the high number of cross-links and covalent bonding to the substrate) to be obtained. A kinetic study over a large set of parameters was run with the aim of determining the optimal conditions for high stability and proton conductivity of the polymer layer. Copolymers with good stability over 6 months' time in air and water were obtained, as demonstrated by ellipsometry, X-Ray reflectivity, and FT-IR spectroscopy. Stable coatings showed also proton conductivity as high as 1.1 ± 0.1 mS cm-1. Chemical analysis showed that due to the high molecular weight of the chosen precursors, it was possible to keep the plasma energy-input-per-mass low. This allowed limited precursor fragmentation and the functional groups of both monomers to be retained during the plasma polymerization.

  7. Determination of photocatalytic activity in amorphous and crystalline titanium oxide films prepared using plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wu, Cheng-Yang; Chiang, Bo-Sheng; Chang, Springfield; Liu, Day-Shan

    2011-01-01

    Hydro-oxygenated amorphous titanium oxide (a-TiO x:OH) films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using precursors of titanium tetraisopropoxide (TTIP) and oxygen. The influences of chemical states and crystal quality on the photocatalytic activity were systematically investigated in the as-deposited and post-annealed films. The degree of the photocatalytic activity was deeply correlated with the porosity related to the hydroxyl (OH) groups in the as-deposited amorphous film. The crystallized anatase structures was observed from the 200 °C-deposited a-TiO x:OH film after a post-annealing treatment at 400 °C. The photocatalytic activity related to the film with anatase structure was markedly superior to that of an amorphous film with porous structures. The larger the crystal size of the anatase structure, the higher the photocatalytic activity obtained. At elevated annealed temperatures, the inferior anatase structure due to the crystalline transformation led to a low photocatalytic activity. It was concluded that the photocatalytic activity of an amorphous TiO x film prepared using PECVD was determined by the porosity originating from the functional OH groups in the film, whereas the crystalline quality of anatase phase in the annealed poly-TiO x film was crucial to the photocatalytic activity.

  8. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  9. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition.

    PubMed

    Zhan, Hualin; Garrett, David J; Apollo, Nicholas V; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm(3), were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  10. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    PubMed Central

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  11. Free standing carbon nanotubes growth on large-area by nanoimprint and plasma-enhanced chemical vapor deposition.

    NASA Astrophysics Data System (ADS)

    Chang, Won Seok; Choi, Dae-Geon; Chung, Jun-Ho; Huh, Kab-Soo

    2008-03-01

    Among various synthesis methods for carbon nanotube growth, chemical vapor deposition (CVD) method has been widely used for various advantages such as high quality, vertical alignment, controlled diameter and length of nanotubes and so on. Especially, vertically aligned multi-wall carbon nanotube could be grown using plasma-enhanced chemical vapor deposition (PECVD). In this paper, we presented growth of free standing carbon nanotubes by PECVD for the fabrication of nano-electrode. For the growth of nanotubes on the large area 50 mm x 50 mm, catalyst dots were formed by nanoimprint and lift-off process. The synthesis of carbon nanotube requires a metal catalyst layer, etchant gas, and a carbon source. Ammonia (NH3) and acetylene (C2H2) were used as the etchant gas and carbon source, respectively. And iron (Fe) of catalyst metal was deposited on silicon wafer substrates. To form Fe nano dots with diameter of 150 nm and thickness of 50 nm, nano holes patterned imprint resin was used for lift-off process. Carbon nanotubes were grown on pretreated substrates at approximately 30% C2H2:NH3 flow ratios for 40 min.

  12. Effects of feed gas composition and catalyst thickness on carbon nanotube and nanofiber synthesis by plasma enhanced chemical vapor deposition.

    PubMed

    Garg, R K; Kim, S S; Hash, D B; Gore, J P; Fisher, T S

    2008-06-01

    Many engineering applications require carbon nanotubes with specific characteristics such as wall structure, chirality and alignment. However, precise control of nanotube properties grown to application specifications remains a significant challenge. Plasma-enhanced chemical vapor deposition (PECVD) offers a variety of advantages in the synthesis of carbon nanotubes in that several important synthesis parameters can be controlled independently. This paper reports an experimental study of the effects of reacting gas composition (percentage methane in hydrogen) and catalyst film thickness on carbon nanotube (CNT) growth and a computational study of gas-phase composition for the inlet conditions of experimentally observed carbon nanotube growth using different chemical reaction mechanisms. The simulations seek to explain the observed effects of reacting gas composition and to identify the precursors for CNT formation. The experimental results indicate that gas-phase composition significantly affects the synthesized material, which is shown to be randomly aligned nanotube and nanofiber mats for relatively methane-rich inlet gas mixtures and non-tubular carbon for methane-lean incoming mixtures. The simulation results suggest that inlet methane-hydrogen mixture coverts to an acetylene-methane-hydrogen mixture with minor amounts of ethylene, hydrogen atom, and methyl radical. Acetylene appears to be the indicator species for solid carbon formation. The simulations also show that inlet methane-hydrogen mixture does not produce enough gas-phase precursors needed to form quality CNTs below 5% CH4 concentrations in the inlet stream. PMID:18681048

  13. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers

    NASA Astrophysics Data System (ADS)

    James, Robinson; Pasquale, Frank L.; Kelber, Jeffry A.

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics.

  14. Plasma-enhanced chemical vapor deposition of ortho-carborane: structural insights and interaction with Cu overlayers.

    PubMed

    James, Robinson; Pasquale, Frank L; Kelber, Jeffry A

    2013-09-01

    X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) are used to investigate the chemical and electronic structure of boron carbide films deposited from ortho-carborane precursors using plasma-enhanced chemical vapor deposition (PECVD), and the reactivity of PECVD films toward sputter-deposited Cu overlayers. The XPS data provide clear evidence of enhanced ortho-carborane reactivity with the substrate, and of extra-icosahedral boron and carbon species; these results differ from results for films formed by condensation and electron beam induced cross-linking of ortho-carborane (EBIC films). The UPS data show that the valence band maximum for PECVD films is ∼1.5 eV closer to the Fermi level than for EBIC films. The XPS data also indicate that PECVD films are resistant to thermally-stimulated diffusion of Cu at temperatures up to 1000 K in UHV, in direct contrast to recently reported results, but important for applications in neutron detection and in microelectronics. PMID:23883590

  15. Fluid modeling for plasma-enhanced direct current chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ismagilov, Rinat R.; Khamidullin, Ildar R.; Kleshch, Victor I.; Malykhin, Sergei A.; Alexeev, Andrey M.; Obraztsov, Alexander N.

    2016-01-01

    A self-consistent continuum (fluid) model for a direct current discharge used in a chemical vapor deposition system is developed. The model is built for a two-dimensional axisymmetric system and incorporates an electron energy balance for low-pressure Ar gas. The underlying physics of the fluid model is briefly discussed. The fluid and Poisson equations for plasma species are used as the model background. The plasma species considered in the model include electrons, Ar+ ions, and Ar atoms in ground and excited states. Nine reactions between these species are taken into account, including surface reactions. The densities of various plasma species as well as the relative contributions of generation and annihilation processes for electrons, ions, and atoms are calculated. The concentrations for electrons and Ar+ ions on the order of 1020 m-3 are obtained for the plasma in the computer simulations.

  16. Growth of aligned carbon nanotubes on carbon microfibers by dc plasma-enhanced chemical vapor deposition

    SciTech Connect

    Chen, L H.; AuBuchon, J F.; Chen, I C.; Daraio, C; Ye, X R.; Gapin, A; Jin, Sungho; Wang, Chong M.

    2006-01-16

    It is shown that unidirectionally aligned carbon nanotubes can be grown on electrically conductive network of carbon microfibers via control of buffer layer material and applied electric field during dc plasma chemical vapor deposition growth. Ni catalyst deposition on carbon microfiber produces relatively poorly aligned nanotubes with significantly varying diameters and lengths obtained. The insertion of Ti 5 nm thick underlayer between Ni catalyst layer and C microfiber substrate significantly alters the morphology of nanotubes, resulting in much better aligned, finer diameter, and longer array of nanotubes. This beneficial effect is attributed to the reduced reaction between Ni and carbon paper, as well as prevention of plasma etching of carbon paper by inserting a Ti buffer layer. Such a unidirectionally aligned nanotube structure on an open-pore conductive substrate structure may conveniently be utilized as a high-surface-area base electrodes for fuel cells, batteries, and other electrochemical and catalytic reactions.

  17. Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen

    NASA Astrophysics Data System (ADS)

    Idris, Irman; Sugiura, Osamu

    1998-12-01

    Silicon dioxide films were deposited in a parallel-plate electrode RF plasma-enhanced chemical vapor deposition (PECVD) system using hydrogen-free tetraisocyanatesilane (TICS) and oxygen. The deposition parameters were varied systematically, and the films were characterized by measuring infrared spectra, density, etch rate, refractive index, and current-voltage (I V) and capacitance-voltage (C V) characteristics, as well as by examining their annealing behavior. At 300°C and a TICS partial pressure ratio of 20%, a water-free and hydroxyl-group-free SiO2 film was obtained. The film density, BHF etch rate, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 330 nm/min, 1.46, 7×1015 Ω·cm, and 3.6, respectively. The film quality degraded and, simultaneously, the film absorbed moisture from the atmosphere with decreasing deposition temperature; however, the quality can be improved by reducing TICS partial pressure. SiO2 films could be deposited even at 15°C, and had a resistivity of about 1013Ω·cm. Infrared measurements showed that SiO2 films deposited from TICS/O2 contained less absorbed water than those deposited from hydrogen-containing source materials at the same deposition temperature.

  18. Single-chamber plasma enhanced chemical vapor deposition of transparent organic/inorganic multilayer barrier coating at low temperature

    SciTech Connect

    Park, S. M.; Kim, D. J.; Kim, S. I.; Lee, N.-E.

    2008-07-15

    Deposition of organic/inorganic multilayers is usually carried out by two different process steps by two different deposition methods. A single-chamber process for the deposition of multilayer stacks can make the process and deposition system simpler. In this work, SiOCH and plasma-polymerized methylcyclohexane (pp-MCH) films and their multilayer stacks for application to transparent diffusion barrier coatings were deposited in a single low-temperature plasma enhanced chemical vapor deposition reactor using hexamethyldisilazane/N{sub 2}O/O{sub 2}/Ar and methylcyclohexane/Ar mixtures for SiOCH and pp-MCH layers, respectively. The deposition rates of the SiOCH and pp-MCH layers were increased with increasing the N{sub 2}O:O{sub 2} gas flow ratio and rf plasma power, respectively. Oxygen concentration in the SiOCH films was decreased and carbon and hydrogen incorporation was increased when increasing the N{sub 2}O:O{sub 2} gas flow ratio from 0:1 to 3:1. In this work, the water vapor transmission rate of polyester sulfone substrate could be reduced from a level of 50 (bare substrate) to 0.8 g/m{sup 2} day after deposition of a pp-MCH/SiOCH/pp-MCH multilayer coating.

  19. Optimal design of antireflection coating and experimental verification by plasma enhanced chemical vapor deposition in small displays

    SciTech Connect

    Yang, S. M.; Hsieh, Y. C.; Jeng, C. A.

    2009-03-15

    Conventional antireflection coating by thin films of quarter-wavelength thickness is limited by material selections and these films' refractive indices. The optimal design by non-quarter-wavelength thickness is presented in this study. A multilayer thin-film model is developed by the admittance loci to show that the two-layer thin film of SiN{sub x}/SiO{sub y} at 124/87 nm and three layer of SiN{sub x}/SiN{sub y}/SiO{sub z} at 58/84/83 nm can achieve average transmittances of 94.4% and 94.9%, respectively, on polymer, glass, and silicon substrates. The optimal design is validated by plasma enhanced chemical vapor deposition of N{sub 2}O/SiH{sub 4} and NH{sub 3}/SiH{sub 4} to achieve the desired optical constants. Application of the antireflection coating to a 4 in. liquid crystal display demonstrates that the transmittance is over 94%, the mean luminance can be increased by 25%, and the total reflection angle increased from 41 deg. to 58 deg.

  20. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups

    PubMed Central

    Szili, Endre J.; Kumar, Sunil; Smart, Roger St. C.; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H.

    2009-01-01

    Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO2, showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups. PMID:19809536

  1. Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

    PubMed Central

    DeCoste, Jared B.; Peterson, Gregory W.

    2013-01-01

    Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m2/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials. PMID:24145623

  2. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    PubMed Central

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  3. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-12-15

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH{sub 4}) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  4. Antireflection coating formed by plasma-enhanced chemical-vapor deposition for terahertz-frequency germanium optics

    NASA Astrophysics Data System (ADS)

    Hosako, Iwao

    2003-07-01

    A method of manufacturing optical coatings for germanium optics used at terahertz frequencies has been developed. The various optical coatings used at terahertz frequencies are difficult to manufacture conventionally because these coatings must be as thick as several tens of micrometers, which is far thicker than those used in the optical region. One way to overcome this problem is to form a silicon oxide layer through plasma-enhanced chemical-vapor deposition, with silane (SiH4) as a source gas. Using this method, I formed 21-μm-thick silicon oxide films as antireflection (AR) layers for germanium optics and obtained low reflection at 1.7 THz (wavelength, λ = 175 μm). This method is easily applied to large-aperture optics and micro-optics as well as to optics with a complex surface form. The AR coatings can also be formed for photoconductive detectors made from germanium doped with gallium at a low temperature (160 °C) this low temperature ensures that the doped impurities in the germanium do not diffuse. Fabrication of optical coatings upon substrates that have refractive indices of 3.84-11.7 may also be possible by control of the refractive indices of the deposited layers.

  5. Synthesis of large scale graphene oxide using plasma enhanced chemical vapor deposition method and its application in humidity sensing

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Chen, Yuming

    2016-03-01

    Large scale graphene oxide (GO) is directly synthesized on copper (Cu) foil by plasma enhanced chemical vapor deposition method under 500 °C and even lower temperature. Compared to the modified Hummer's method, the obtained GO sheet in this article is large, and it is scalable according to the Cu foil size. The oxygen-contained groups in the GO are introduced through the residual gas of methane (99.9% purity). To prevent the Cu surface from the bombardment of the ions in the plasma, we use low intensity discharge. Our experiment reveals that growth temperature has important influence on the carbon to oxygen ratio (C/O ratio) in the GO; and it also affects the amount of π-π* bonds between carbon atoms. Preliminary experiments on a 6 mm × 12 mm GO based humidity sensor prove that the synthesized GO reacts well to the humidity change. Our GO synthesis method may provide another channel for obtaining large scale GO in gas sensing or other applications.

  6. Creating Voids by Annealing a-SiC:O:H Films Prepared by Plasma-enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Gangopadhyay, S.; Lahlouh, B.; Rajagopalan, T.; Biswas, N.; Mehta, N.; Lubguban, J. A.

    2004-03-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) films were prepared by plasma-enhanced chemical vapor deposition from diethylsilane (C4H12Si) diluted in methane (CH4). The deposition conditions resulted in a highly unstable a-SiC:H film, which reacted with oxygen when exposed to air, forming Si-OH and H-OH bonds and Si-O networks as well. The Rutherford Back Scattering analysis shows 15incorporation. The Fourier transfom infra-red (FT-IR) measurement suggests the presence of a-SiC:O:H component and a-C:H moieties throughout the film. The films were then thermally annealed in vacuum at 450C to removed unstable C-H bonds and Si-OH and H-OH groups creating voids in the film. The removal of C-H, Si-OH and H-OH is evident from the FT-IR spectra. During the annealing process, the film also cross-links and formed a stable a-SiC:O:H film. After annealing, the dielectric constant of the films decreased from 4.2 to 2.1 suggesting the presence of voids/pores in the films.

  7. Structure and characteristics of C3N4 thin films prepared by rf plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Dawei, Wu; Dejun, Fu; Huaixi, Guo; Zhihong, Zhang; Xianquan, Meng; Xiangjun, Fan

    1997-08-01

    C3N4 films were prepared on Si(111) by rf plasma-enhanced chemical vapor deposition using Si3N4/TiN and Si3N4/ZrN as transition layers. X-ray diffraction and transmission electron diffraction revealed that the films deposited have a polycrystalline structure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy confirmed the presence of sp3 and sp2 hybridized C atoms tetrahedrally and hexagonally bonded with N atoms, respectively. The nitrogen concentration was calculated from the XPS spectra. Graphite-free C3N4 films were obtained under optimal conditions. The Vickers hardness of the C3N4 films falls in the range of 2950-5100 kgf/mm2. The C3N4 films exhibit high resistance against acid and electrochemical etching. Thermal gravimetric and differential thermal analysis showed that the films are thermally stable at temperatures ranging from room temperature to 1200 °C.

  8. Large-area SiC membrane produced by plasma enhanced chemical vapor deposition at relatively high temperature

    SciTech Connect

    Liu, Yu; Xie, Changqing

    2015-09-15

    Advances in the growth of silicon carbide (SiC) thin films with outstanding thermal and mechanical properties have received considerable attention. However, the fabrication of large-area free-standing SiC membrane still remains a challenge. Here, the authors report a plasma enhanced chemical vapor deposition process at a relatively high temperature to improve the free-standing SiC membrane area. A systematic study on the microstructural, mechanical, and optical properties of hydrogenated polycrystalline silicon carbide (poly-SiC{sub x}:H) thin films deposited at 600 °C with different annealing temperatures has been performed. In the as-deposited state, SiC{sub x}:H thin films show a polycrystalline structure. The crystallinity degree can be further improved with the increase of the postdeposition annealing temperature. The resulting process produced free-standing 2-μm-thick SiC membranes up to 70 mm in diameter with root mean square roughness of 3.384 nm and optical transparency of about 70% at 632.8 nm wavelength. The large-area SiC membranes made out of poly-SiC{sub x}:H thin films deposited at a relatively high temperature can be beneficial for a wide variety of applications, such as x-ray diffractive optical elements, optical and mechanical filtering, lithography mask, lightweight space telescopes, etc.

  9. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Outlaw, R. A.; Hopson, P., Jr.

    1986-01-01

    Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm.

  10. Parametric Study for Selective Growth of Single-Walled Carbon Nanotubes in Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Nozaki, Tomohiro; Karatsu, Takuya; Yoshida, Shinpei; Okazaki, Ken

    2011-01-01

    Carbon nanotube (CNT) growth mechanism in plasma enhanced chemical vapor deposition (PECVD) is presented. Previously developed atmospheric pressure glow discharge reactor was modified and used for this purpose. First, pressure-dependent transition (20-100 kPa) of CNT morphology was investigated with fixed input power (60 W) and different catalyst loading (Fe/Al2Ox: 20 nm). High-purity, vertically-aligned single-walled CNTs (SWCNTs) were synthesized when capacitively coupled non-thermal plasma was generated at atmospheric pressure. On the other hand, fraction of double-walled and multi-walled CNTs increased as total pressure decreased. Although CNT growth rate was decelerated at reduced input power (5-20 W), SWCNTs were also synthesized in the root growth regime at 20 kPa. Plasma-generated reactive species are the important driving force of CNT growth; however, generation and transportation of those species must be properly suppressed for selective growth of single-, double-, and multi-walled CNTs.

  11. A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mizutani, Takashi; Ohnaka, Hirofumi; Okigawa, Yuki; Kishimoto, Shigeru; Ohno, Yutaka

    2009-10-01

    The electrical properties of carbon nanotubes (CNTs) grown by plasma-enhanced chemical vapor deposition (PECVD) have been studied by measuring the I-V characteristics of many CNT-field effect transistors. The ratio of modulation current to total current was as high as 97%, with a small nondepletable OFF current component. This suggests that CNTs with semiconducting behavior were preferentially grown in the PECVD process. Raman scattering spectroscopy of the PECVD-grown CNTs, however, revealed several peaks of the radial breezing mode, which correspond to the presence of metallic CNTs. Scanning gate microscopy measurement of the CNT-FET with an ON/OFF ratio of 100 revealed the existence of a potential barrier in the metallic CNTs. These results suggest that observation of the preferential growth of CNTs with semiconducting behavior in the CNT-FETs fabricated via the present PECVD process results from the opening of the band gap due to defects caused by irradiation damage during the PECVD growth.

  12. Investigation on growth behavior of CNTs synthesized by atmospheric pressure plasma enhanced chemical vapor deposition system on Fe catalyzed substrate.

    PubMed

    Choi, Bum Ho; Kim, Won Jae; Kim, Young Baek; Lee, Jong Ho; Park, Jong Woon; Kim, Woo Sam; Shin, Dong Chan

    2008-10-01

    We have studied growth behavior of carbon nanotubes (CNTs) on iron (Fe) catalyzed substrate using newly developed atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) system. To investigate the improved growth performance with simple equipment and process on large scale, a new AP-PECVD system containing different concept on downstream gas was designed and manufactured. As a catalyst, either sputtered or evaporated Fe thin film on SiO2/Si substrate was used and acetylene gas was used as a carbon source. We observed growth behavior of CNTs such as height, rate and density were strongly affected by plasma power. The maximum height of 427 microm and 267 microm was synthesized under RF plasma power of 30 W for 30 min and 40 W for 3 min, respectively. The growth rate dramatically increased to 6.27 times as plasma power increased from 30 to 40 W which opens the possibility the mass production of CNTs. By SEM and TEM observation, it was verified the grown CNTs was consists of mixture of single-wall and multi-wall CNTs. The graphitization ratio was measured to be 0.93, indicating that the graphitized CNTs forest was formed and relatively high purity of CNTs was synthesized, being useful for nano-composite materials to reinforce the strength. From our experiments, we can observe that the height and growth rate of CNTs is strong function of plasma power. PMID:19198378

  13. Effects of plasma power on the growth of carbon nanotubes in the plasma enhanced chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Abdi, Y.; Arzi, E.; Mohajerzadeh, S.

    2008-11-01

    Effects of plasma power on the growth of the multi-wall carbon nanotubes (CNTs) are reported. CNTs were grown on the silicon wafers by plasma enhanced chemical vapor deposition (PECVD) method using a mixture of acetylene and hydrogen at the temperature of 650°C. Plasma powers ranging from zero to 35W were applied on the samples and the effects of different magnitudes of the plasma power on the growth direction of the CNTs were investigated. Regular vertically aligned nanotubes were obtained at plasma power of 25W. In order to set on the plasma during the growth, electrical force was applied on the carbon ions. Nickel layer was used as a catalyst, and prior to the nanotubes growth step, it was treated by hydrogen plasma bombardment in order to obtain the Ni nano-islands. In this step, as the plasma power on the Ni layer was increased, the grain size of nickel nano-particles decreased, and hence, nanotubes of smaller diameter were obtained later on. At the last step some anomalous structures of agglomerated CNTs were obtained by controlling the plasma power. Samples were analyzed by scanning tunneling microscopy (STM) and scanning electron microscopy (SEM).

  14. Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chao, Chung-Hua; Wei, Da-Hua

    2014-11-01

    Non-polar coexisting m-plane (10\\bar{1}0) and a-plane (11\\bar{2}0) zinc oxide (ZnO) thin films have been synthesized onto commercial silicon (100) substrates by using plasma enhanced chemical vapor deposition (PECVD) system at different working pressures. The effects of the working pressure on crystal orientation, microstructure, surface morphology, and optical properties of the ZnO thin films were investigated. From the X-ray diffraction patterns, the non-polar ZnO thin films were successfully synthesized at the working pressures of 6 and 9 Torr, respectively. The non-polar ZnO thin films showed stripes-like surface morphology and with smooth surface roughness (˜3.53 nm) was performed by field emission scanning electron microscope (FE-SEM) and atomic force microscope (AFM), respectively. All the ZnO films show a remarkable near-band-edge (NBE) emission peak located at ultraviolet (UV) band accompanying a negligible deep-level (DL) emission at visible region detected by photoluminescence (PL) spectra at room temperature. From the above systematic measurement analysis, indicating the better crystallinity and optical character of ZnO thin film was improved with reducing the working pressure. The wettability of non-polar ZnO thin films was also explored in this presented article.

  15. Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films

    NASA Astrophysics Data System (ADS)

    Cao, Zhiqiang; Zhang, Xin

    2004-10-01

    The structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1to40μm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat/electrical insulation layers.

  16. Effects of ion bombardments on electronic properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sugiura, Hirotsugu; Jia, Lingyun; Kondo, Hiroki; Ishikawa, Kenji; Takeda, Keigo; Sekine, Makoto; Hori, Masaru

    2015-09-01

    Amorphous carbon (a-C) films show huge variety of optical and electronic properties, because of a mixture of sp2 and sp3 bonding carbon. Therefore, it's expected to apply a-C films to optical and electrical device applications, such as solar cells. However, there has been no report about a photovoltaic effect in a-C junction solar cells. Growth mechanism and relationship between plasma factors and film properties are not clarified yet. It is important to clear the effect of radicals and ions on their film properties. In this study, a-C films were synthesized by a radical-injection plasma-enhanced chemical vapor deposition at 550 degree C, in which 20 or 250 W VHF powers was applied to capacitively-coupled plasma (CCP). And, RF bias powers were applied to substrates to control the self-bias voltage (VDC) . VDC values were adjusted to 200, 275, and 400V, respectively. As the CCP power increased, optical emission intensity of C2 radicals increased, and G-band peaks became shaper which indicates development of graphitization. With increasing the VDC, optical band gap decreased and conductivity increased. From these results, it was found that formation of sp2 bonds and modification of energy bandgap can be realized by control of ion energy.

  17. Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition

    SciTech Connect

    Kim, S.; Kim, I.; Kim, K.

    1996-12-01

    Cubic boron nitride ({ital c}-BN) film was deposited on Si(100) substrate using the chemical vapor deposition process assisted by high density plasma of Helicon wave with Borazine (B{sub 3}N{sub 3}H{sub 6}) precursor. It was found that the bombardment of ions with high flux and energy onto the film was necessarily required for synthesizing a {ital c}-BN film. Increasing a negative rf bias on the substrate increased the formation fraction of {ital c}-BN in the film. A nearly pure {ital c}-BN phase was synthesized at the conditions of plasma density in the reactor and rf substrate bias, above 10{sup 11} cm{sup {minus}3} and {minus}350 V, respectively. The phase identification of BN film was carried out by the transmission electron microscopy as well as Fourier transformed infrared spectroscopy. The infrared spectra for {ital c}-BN film synthesized at the rf bias of {minus}350 V appeared at 1093 cm{sup {minus}1} with a strong single peak, which is close to a value for the characteristic vibration mode of bulk {ital c}-BN (1065 cm{sup {minus}1}). The {ital c}-BN in the film was also confirmed and found to be a fine poly-crystalline with the grain sizes ranging from 200 to 400 A. {copyright} {ital 1996 American Institute of Physics.}

  18. Microwave-assisted Chemical Transformations

    EPA Science Inventory

    In recent years, there has been a considerable interest in developing sustainable chemistries utilizing green chemistry principles. Since the first published report in 1986 by Gedye and Giguere on microwave assisted synthesis in household microwave ovens, the use of microwaves as...

  19. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    SciTech Connect

    Baumann, H.; Sah, R.E.

    2005-05-01

    We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.

  20. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Abbasi-Firouzjah, M.; Shokri, B.

    2013-12-01

    Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF4) was used for the deposition of the films in forms of two structures called as SiOxCy and SiOxCyFz. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF4 flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiOxCy and SiOxCyFz films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiOxCy films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF4 in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiOxCyFz films and the leakage current of these films reduced by increment of the CF4 flow.

  1. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition

    SciTech Connect

    Abbasi-Firouzjah, M.; Shokri, B.

    2013-12-07

    Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF{sub 4}) was used for the deposition of the films in forms of two structures called as SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z}. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF{sub 4} flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z} films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiO{sub x}C{sub y} films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF{sub 4} in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiO{sub x}C{sub y}F{sub z} films and the leakage current of these films reduced by increment of the CF{sub 4} flow.

  2. In situ growth of YBa sub 2 Cu sub 3 O sub 7 minus x high Tc superconducting thin films directly on sapphire by plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Chern, C.S.; Zhao, J.; Li, Y.Q.; Norris, P.; Kear, B.; Gallois, B. )

    1990-08-13

    Highly {ital c}-axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films have been, {ital in} {ital situ}, deposited directly on sapphire substrate by a remote microwave plasma-enhanced metalorganic chemical vapor deposition process (PE-MOCVD). The films were deposited at a substrate temperature of 730 {degree}C followed by a fast cooling. The as-deposited films show attainment of zero resistance at 82 K and have critical current density of 10{sup 4} A/cm{sup 2} at 70 K. ac susceptibility measurement indicated that the films contain a single superconducting phase. PE-MOCVD was carried out in a commercial-scale MOCVD reactor with capability of uniform deposition over 100 cm{sup 2} per growth run.

  3. Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane

    NASA Astrophysics Data System (ADS)

    Takeda, Ken-ichi; Ryuzaki, Daisuke; Mine, Toshiyuki; Hinode, Kenji; Yoneyama, Ryo

    2003-08-01

    The barrier mechanism against copper-ion diffusion in silicon-oxide films deposited by plasma-enhanced chemical vapor deposition (PECVD) using trimethoxysilane (TMS) and nitrous oxide (N2O) chemistry (PE-TMS oxide) was studied. It was found that the flow ratio of TMS gas to N2O gas during deposition strongly affects a time-dependent dielectric-breakdown lifetime of PE-TMS oxide with a copper electrode as well as other PE-TMS oxide film properties such as electrical properties (leakage current and dielectric constant), a physical property (atomic composition), and chemical properties (chemical bonding states and wet-etching rate). The dielectric-breakdown lifetime of PE-TMS oxide film with a copper anode is a maximum at a source-gas ratio ranging from 1.7% to 3.3%. On the other hand, leakage current density, wet-etch rate, and dielectric-breakdown lifetime of PE-TMS oxide film with an aluminum electrode are degraded by increasing the source-gas flow ratio (0.83% to 12%). These results suggest that two types of degradation mode exist in the dielectric breakdown of PE-TMS oxide with a copper electrode. Namely, at low flow ratio (<1.7%), copper-induced degradation is dominant, but at high flow ratio (>3.3%), the dielectric degradation is probably not caused by copper contamination but by low-quality dielectric material. The dielectric-breakdown lifetimes of a PE-TMS oxide film (flow ratio: 3.3%) with a copper anode show an Arrhenius-type temperature dependence. That is, the activation energy of the dielectric-breakdown lifetime depends on the applied electric field and decreases from 1.8 to 0.55 eV when the applied field is increased from 0 to 5 MV/cm. As a simple kinetic model of the copper injection reaction at the anode surface, a thermally activated reaction process between two energy states—copper atom state on the anode surface and copper ion state in the dielectric material—is proposed.

  4. Microwave assisted chemical vapor infiltration

    SciTech Connect

    Devlin, D.J.

    1993-12-31

    The purpose of this program is to develop a new process for the fabrication of ceramic matrix composites by chemical vapor infiltration. This period has been devoted in part to the exploration of material systems suitable for MACVI processing. A number of potential processing schemes are possible using combinations of absorbing and transparent material as composite components. This includes the use of an absorbing preform (nicalon fiber) combined with a transparent matrix (silicon nitride). Composites 5 cm in diameter by 1 cm. thick have been fabricated to densities of 65% theoretical. Processing times for these materials are under 20 hours. Higher densities will require additional microwave power now possible with the new reactor. The most effective MACVI scheme will involve the use of a transparent fiber with an absorbing matrix. The hot spot will be initiated by appropriate treatment of the central region of the preform. To this end alumna fibers with pretreatments to control thermal gradients has been explored. Nextel 610 fibers have been effectively pretreated carbon coating resulting in preferential heating in the interior of the preform. Possible matrix materials include siliconized silicon carbide, doped silicon carbide, alumna and zirconia. A patent for MACVI has been issued 10/19/93.

  5. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    PubMed

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings. PMID:25775244

  6. Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

    SciTech Connect

    Kawata, Mayuri Ojiro, Yoshihiro; Ogawa, Shuichi; Takakuwa, Yuji; Masuzawa, Tomoaki; Okano, Ken

    2014-03-15

    Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

  7. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials. PMID:27433646

  8. EFFICIENT CHEMICAL SYNTHESIS USING MICROWAVES

    EPA Science Inventory

    Synthetic organic transformations performed under non-traditional conditions are becoming popular primarily to circumvent the growing environmental concerns. A solvent-free approach that involves microwave (MW) exposure of neat reactants catalyzed by the surfaces of less-expensiv...

  9. Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

    SciTech Connect

    Castex, A.; Jousseaume, V.; Deval, J.; Bruat, J.; Favennec, L.; Passemard, G.

    2008-09-15

    As interconnects are scaled down, much effort is made to achieve ultralow k material with a dielectric constant lower than 2.5. Thus, many new precursors are investigated in plasma-enhanced chemical vapor deposition. This is particularly true with the porogen approach where two molecules are used: an organosilicon to create the silicon matrix and an organic molecule 'porogen' that creates material porosity during a post-treatment such as annealing. In this article, the influence of the organosilicon molecular structure is investigated. Two 'matrix precursors' with different structures are therefore compared. The first one, referred to as D5, has a ring structure (decamethyl pentacyclosiloxane); the second one, referred to as DEOMS, has a star structure (diethoxymethyl silane). The porogen organic molecule, referred to as CHO, is cyclohexen oxide. The fragmentation paths of the precursor molecules in the plasma are investigated by quadrupole mass spectroscopy and the film structure is studied by Fourier transform infrared spectroscopy. The mass spectroscopy analysis shows that the fragmentation in plasma is highest for DEOMS, intermediate for CHO, and lowest for D5 in comparable process conditions. At the maximum plasma power setting, the loss rate, which yields molecule consumption, is 43%-81% for the D5-CHO mixture, respectively, and 73%-37% for the DEOMS-CHO mixture, respectively. This is related to higher bond-dissociation energy for the siloxane (Si-O-Si) link in D5 than silane (Si-H), silylethoxyde (Si-OC{sub 2}H{sub 5}) in DEOMS, or C-C and epoxy cycle in CHO. Indeed, a higher electron-energy relative threshold for dissociation under electron impact is measured for D5 (around 7 eV) than for DEOMS and CHO (around 4 eV). Moreover, the fragment structures differ from one precursor to another. Methyl groups are abstracted from D5 and a few polysiloxane chains are produced from pentacycle opening and fragmentation. In the case of DEOMS, many single silicon

  10. Modeling and experimental study on the growth of silicon germanium film by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Lai

    Hydrogenated microcrystalline silicon germanium µc-SiGe:H deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest to photovoltaic (PV) applications due to its low process temperature and good uniformity over large area. The nature of high optical absorption and low optical bandgap makes it promising as the bottom cell absorbing layer for tandem junction solar cells. However, the addition of germane (GeH4) gas changes deposited film properties and makes it rather complicated for the established silane (SiH4) based discharge process with hydrogen (H2) dilution. Despite existing experimental studies for SiH 4/GeH4/H2 3-gas mixture discharge and comprehensive numerical simulations for SiH4/H2 or SiH4/Ar plasma, to the author's best knowledge, a numerical model for both SiH 4 and GeH4 in a high pressure regime is yet to be developed. The plasma discharge, the film growth and their effects on film properties and the solar device performance need deep understanding. In this dissertation, the growth of the µc-SiGe:H film by radio frequency (RF) PECVD is studied through modeling simulation as well as experiments. The first numerical model for the glow discharge of SiH4/GeH 4/H2 3-gas mixture in a high pressure regime is developed based on one dimensional fluid model. Transports of electrons, molecules, radicals and ions in the RF excitation are described by diffusion equations that are coupled with the Poisson's equation. The deposition is integrated as the boundary conditions for discharge equations through the sticking coefficient model. Neutral ionizations, radical dissociations and chemical reactions in the gas phase and surface kinetics such as the diffusive motion, chemical reactions and the hydrogen etching are included with interaction rate constants. Solved with an explicit central-difference discretization scheme, the model simulates mathematical features that reflect the plasma physics such as the plasma sheath and gas species

  11. GREENER CHEMICAL SYNTHESIS USING MICROWAVES

    EPA Science Inventory

    A solvent-free approach that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of recyclable mineral supports such as alumina, silica, clay, or "doped" surfaces is presented which is applicable to a wide range of cleavage, condensation, cyc...

  12. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures

    NASA Astrophysics Data System (ADS)

    Gaspar, J.; Gualdino, A.; Lemke, B.; Paul, O.; Chu, V.; Conde, J. P.

    2012-07-01

    This paper reports on the mechanical and piezoresistance characterization of hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot-wire chemical vapor deposition (HWCVD) and radio-frequency plasma-enhanced chemical vapor deposition (PECVD) using substrate temperatures between 100 and 250 °C. The microtensile technique is used to determine film properties such as Young's modulus, fracture strength and Weibull parameters, and linear and quadratic piezoresistance coefficients obtained at large applied stresses. The 95%-confidence interval for the elastic constant of the films characterized, 85.9 ± 0.3 GPa, does not depend significantly on the deposition method or on film structure. In contrast, mean fracture strength values range between 256 ± 8 MPa and 600 ± 32 MPa: nanocrystalline layers are slightly stronger than their amorphous counterparts and a pronounced increase in strength is observed for films deposited using HWCVD when compared to those grown by PECVD. Extracted Weibull moduli are below 10. In terms of piezoresistance, n-doped radio-frequency nanocrystalline silicon films deposited at 250 °C present longitudinal piezoresistive coefficients as large as -(2.57 ± 0.03) × 10-10 Pa-1 with marginally nonlinear response. Such values approach those of crystalline silicon and of polysilicon layers deposited at much higher temperatures.

  13. Microwave-enhanced chemical processes

    DOEpatents

    Varma, Ravi

    1990-01-01

    A process for disposal of toxic wastes including chlorinated hydrocarbons, comprising, establishing a bed of non-metallic particulates having a high dielectric loss factor. Effecting intimate contact of the particulates and the toxic wastes at a temperature in excess of about 400.degree. C. in the presence of microwave radiation for a time sufficient to break the hydrocarbon chlorine bonds and provide detoxification values in excess of 80 and further detoxifying the bed followed by additional disposal of toxic wastes.

  14. Hydrogen-Free Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO) 4)

    NASA Astrophysics Data System (ADS)

    Idris, Irman; Sugiura, Osamu

    1995-06-01

    Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetra-isocyanate-silane (Si(NCO)4 : TICS) and oxygen for interlayer dielectric film application is proposed. Film properties strongly depend on the gas composition. The film which was deposited under an oxygen-rich condition was water-free after deposition. The film density, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 1.46, 5×1014 Ω·cm, and 3.6, respectively. The etch rate by buffered HF was 330 nm/min.

  15. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    NASA Astrophysics Data System (ADS)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  16. Influence of density on N-H bond stretch vibration in plasma enhanced chemical vapor deposited SiN{sub x}:H

    SciTech Connect

    Dekkers, H. F. W.; Pourtois, G.; Srinivasan, Nagendra Babu

    2010-01-04

    The infrared absorption of hydrogenated silicon nitride (SiN{sub x}:H) films provides information about the average configuration of covalent bonds in the film. In plasma enhanced chemical vapor deposited SiN{sub x}:H, the absorption spectrum of the N-H bonds shows both a systematic shift and a tailing toward lower frequency with the increase in the film density. First-principles computations of N-H vibrations show an increased degree of anharmonicity when the H site is weakly interacting with a second neighboring N atom. This interaction becomes more pronounced in films with higher density, which consequently shifts the vibrational spectrum down.

  17. Microwave-enhanced chemical processes

    DOEpatents

    Varma, R.

    1990-06-19

    A process is disclosed for the disposal of toxic wastes including chlorinated hydrocarbons, comprising, establishing a bed of non-metallic particulates having a high dielectric loss factor. Intimate contact of the particulates and the toxic wastes at a temperature in excess of about 400 C in the presence of microwave radiation for a time sufficient breaks the hydrocarbon chlorine bonds. Detoxification values in excess of 80 are provided and further detoxification of the bed is followed by additional disposal of toxic wastes. 1 figure.

  18. CHEMICAL SYNTHESES IN AQUEOUS MEDIA USING MICROWAVES

    EPA Science Inventory

    The development of efficient, selective and eco-friendly synthetic methods has remained a major focus of our research group. Microwave (MW) irradiation as alternative energy source in conjunction with water as reaction media has proven to be a successful 'greener' chemical appro...

  19. Microwave Technology--Applications in Chemical Synthesis

    EPA Science Inventory

    Microwave heating, being specific and instantaneous, is unique and has found a place for expeditious chemical syntheses. Specifically, the solvent-free reactions are convenient to perform and have advantages over the conventional heating protocols as summarized in the previous se...

  20. ‘GREENER’ CHEMICAL SYNTHESES USING MICROWAVES

    EPA Science Inventory

    The diverse nature of chemical entities requires various green strategic pathways in our quest towards attaining sustainability. A solvent-free approach that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of less-expensive and recyclable ...

  1. Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

    SciTech Connect

    Lee, Byung Kook; Jung, Eunae; Kim, Seok Hwan; Moon, Dae Chul; Lee, Sun Sook; Park, Bo Keun; Hwang, Jin Ha; Chung, Taek-Mo; Kim, Chang Gyoun; An, Ki-Seok

    2012-10-15

    Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO{sub 2}. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 10{sup 6} while the device mobility values were increased from 2.31 cm{sup 2}/V s to 6.24 cm{sup 2}/V s upon increasing the deposition temperature of the tin oxide films.

  2. Remote plasma enhanced chemical vapor deposition of fluorinated silicon oxide films using 1,2bis(methyldifluorosilyl)ethane and triethoxyfluorosilane

    NASA Astrophysics Data System (ADS)

    Jin, Zhongping

    2005-07-01

    The deposition characteristics of fluorinated silicon dioxide (SiO xFy) films using two fluorine-containing precursors, 1,2bis(methyldifluorosilyl)ethane (FASi-4) and triethoxyfluorosilane (FTES) were investigated in a custom-built remote microwave plasma enhanced chemical vapor deposition (PECVD) micro-reactor system. These studies were motivated by the finding that incorporation of fluorine in the oxide films reduces the dielectric permittivity of the films. Statistically-designed experiments were performed to identify significant independent parameters and their interactions, and to determine preferred operating windows; subsequent one factor at a time experiments were performed to better understand the effects of important single variables. Complementary film characterization methods including Rutherford Backscattering Spectroscopy (RBS), Fourier transform infrared transmission spectroscopy (FTIR), and scanning electron microscopy (SEM) were used to investigate and quantify film physical, chemical and electrical properties. Arrhenius-type plots for the dependence of the deposition rate on substrate inverse temperature show that the FASi-4 sourced process is mildly activated with an apparent activation energy of 0.17 eV at a pressure of 0.4 Torr and 0.05 eV at a pressure of 0.1 Torr. Single factor experiments indicate that the deposition rates exhibit maxima at 0.1 Torr and 0.31 Torr for FASi-4 and FTES, respectively. The deposition rate maxima occur at lower pressures than the corresponding maximum observed for PETEOS deposition (˜0.6 Torr). Deposition rate maxima were also observed as a function of oxygen to source gas flow ratio. The deposition rate maximizes at 108 A/min with an oxygen: FTES flow ratio of 12:1. The deposition rate with TEOS, on the other hand, maximizes at over 400 A/min at an oxygen: TEOS flow ratio of 3:1. RBS data indicate that decreasing O2:FASi-4 ratio from 15:1 to 8:1 increases the fluorine content in the deposited fluorinated silicon

  3. Effect of gas residence time on near-edge X-ray absorption fine structures of hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jia, Lingyun; Sugiura, Hirotsugu; Kondo, Hiroki; Takeda, Keigo; Ishikawa, Kenji; Oda, Osamu; Sekine, Makoto; Hiramatsu, Mineo; Hori, Masaru

    2016-04-01

    In hydrogenated amorphous carbon films, deposited using a radical-injection plasma-enhanced chemical vapor deposition system, the chemical bonding structure was analyzed by near-edge X-ray absorption fine-structure spectroscopy. With a change in the residence times of source gases in a reactor, whereby total gas flow rates of H2/CH4 increased from 50 to 400 sccm, sp2-C fractions showed the minimum value at 150 sccm, while H concentration negligibly changed according to the results of secondary ion mass spectroscopy. On the other hand, widths of σ* C-C peaks increased with decreasing gas residence time, which indicates an increase in the fluctuation of bonding structures.

  4. Characterization of TiO x film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source

    NASA Astrophysics Data System (ADS)

    Nakamura, Masatoshi; Korzec, Dariusz; Aoki, Toru; Engemann, Jurgen; Hatanaka, Yoshinori

    2001-05-01

    The high rate deposition of TiO x film at low temperature was achieved by plasma enhanced chemical vapor deposition (PECVD) using titanium tetraisopropoxide (TTIP) as a source material. The multi-jet hollow cathode plasma source was used to generate the high-density plasma, which was showered toward the substrate. The emission spectra suggest that oxygen radicals play an important role for dissociation of the source material and for yielding the precursors. The high deposition rate up to 50 nm/min was achieved by this process. The as-deposited films are completely amorphous. They consist of structures with complex bondings including both tetrahedral and octahedral components. Though they have such complex bondings, the hydrophilicity of the PECVD film is excellent comparing to that of the annealed crystalline anatase structure. It seems that the PECVD using the multi-jet plasma source is promising for fabrication of hydrophilic TiO x films in low-temperature process.

  5. Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

    NASA Astrophysics Data System (ADS)

    Dang, Chun; Wang, Tingzhi

    2006-11-01

    Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH 4, NH 3, and H 2 as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.

  6. Ellipsometric and Rutherford Back scattering Spectrometry studies of SiO(X)N(Y) films elaborated by plasma-enhanced chemical vapour deposition technique.

    PubMed

    Mahamdi, R; Boulesbaa, M; Saci, L; Mansour, F; Molliet, C; Collet, M; Temple-Boyer, P

    2011-10-01

    Silicon oxynitride (SiO(X)N(Y)) thin films were deposited by plasma-enhanced chemical vapour deposition technique (PECVD) from silane (SiH4), nitrous oxide (N2O), ammonia (NH3) and nitrogen (N2) mixture. Spectroscopic ellipsometry (SE), in the range of wavelengths 450-900 nm, was used to define the film thickness and therefore the deposition rate, as well as the refractive index as a function of the N2O gaseous flow. While considering the (Si3N4, SiO2, H2 or void) heterogeneous mixture, Maxwell Garnett (MG) theory allows to fit the SE measurements and to define the volume fraction of the different phases. Finally, Rutherford Backscattering Spectrometry (RBS) results showed that x = O/Si ratio increases gradually with increasing the N2O flow, allowing the correlation of the SiO(X)N(Y) films main parameters. PMID:22400311

  7. Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition Process

    NASA Astrophysics Data System (ADS)

    Ma, Yifei; Jang, Haegyu; Kim, Sun Jung; Pang, Changhyun; Chae, Heeyeop

    2015-08-01

    Vertical graphene (VG) nanosheets are directly grown below 500 °C on glass substrates by a one-step copper-assisted plasma-enhanced chemical vapour deposition (PECVD) process. A piece of copper foil is located around a glass substrate as a catalyst in the process. The effect of the copper catalyst on the vertical graphene is evaluated in terms of film morphology, growth rate, carbon density in the plasma and film resistance. The growth rate of the vertical graphene is enhanced by a factor of 5.6 with the copper catalyst with denser vertical graphene. The analysis of optical emission spectra suggests that the carbon radical density is increased with the copper catalyst. Highly conductive VG films having 800 Ω/□ are grown on glass substrates with Cu catalyst at a relatively low temperature.

  8. Synthesis and characterization of silicon carbonitride films by plasma enhanced chemical vapor deposition (PECVD) using bis(dimethylamino)dimethylsilane (BDMADMS), as membrane for a small molecule gas separation

    NASA Astrophysics Data System (ADS)

    Kafrouni, W.; Rouessac, V.; Julbe, A.; Durand, J.

    2010-12-01

    Silicon carbonitride thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) from bis(dimethylamino)dimethylsilane (BDMADMS) as a function of X = (BDMADMS/(BDMADMS + NH 3)) between 0.1 and 1, and plasma power P (W) between 100 and 400 W. The microstructure of obtained materials has been studied by SEM, FTIR, EDS, ellipsometrie, and contact angle of water measurements. The structure of the materials is strongly depended on plasma parameters; we can pass from a material rich in carbon to a material rich in nitrogen. Single gas permeation tests have been carried out and we have obtained a helium permeance of about 10 -7 mol m -2 s -1 Pa -1 and ideal selectivity of helium over nitrogen of about 20.

  9. Preparation of Aligned Ultra-long and Diameter-controlled Silicon Oxide Nanotubes by Plasma Enhanced Chemical Vapor Deposition Using Electrospun PVP Nanofiber Template

    NASA Astrophysics Data System (ADS)

    Zhou, Ming; Zhou, Jinyuan; Li, Ruishan; Xie, Erqing

    2010-02-01

    Well-aligned and suspended polyvinyl pyrrolidone (PVP) nanofibers with 8 mm in length were obtained by electrospinning. Using the aligned suspended PVP nanofibers array as template, aligned ultra-long silicon oxide (SiO x) nanotubes with very high aspect ratios have been prepared by plasma-enhanced chemical vapor deposition (PECVD) process. The inner diameter (20-200 nm) and wall thickness (12-90 nm) of tubes were controlled, respectively, by baking the electrospun nanofibers and by coating time without sacrificing the orientation degree and the length of arrays. The micro-PL spectrum of SiO x nanotubes shows a strong blue-green emission with a peak at about 514 nm accompanied by two shoulders around 415 and 624 nm. The blue-green emission is caused by the defects in the nanotubes.

  10. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C2H2/NH3 and C2H2/H2 with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH3 and H2) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals).

  11. Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Un Jeong; Lee, Eun Hong; Kim, Jong Min; Min, Yo-Sep; Kim, Eunseong; Park, Wanjun

    2009-07-01

    Nearly perfect semiconducting single-walled carbon nanotube random network thin film transistors were fabricated and their reproducible transport properties were investigated. The networked single-walled carbon nanotubes were directly grown by water-assisted plasma-enhanced chemical vapor deposition. Optical analysis confirmed that the nanotubes were mostly semiconductors without clear metallic resonances in both the Raman and the UV-vis-IR spectroscopy. The transistors made by the nanotube networks whose density was much larger than the percolation threshold also showed no metallic paths. Estimation based on the conductance change of semiconducting nanotubes in the SWNT network due to applied gate voltage difference (conductance difference for on and off state) indicated a preferential growth of semiconducting nanotubes with an advantage of water-assisted PECVD. The nanotube transistors showed 10-5 of on/off ratio and ~8 cm2 V-1 s-1 of field effect mobility.

  12. Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition.

    PubMed

    Kim, Un Jeong; Lee, Eun Hong; Kim, Jong Min; Min, Yo-Sep; Kim, Eunseong; Park, Wanjun

    2009-07-22

    Nearly perfect semiconducting single-walled carbon nanotube random network thin film transistors were fabricated and their reproducible transport properties were investigated. The networked single-walled carbon nanotubes were directly grown by water-assisted plasma-enhanced chemical vapor deposition. Optical analysis confirmed that the nanotubes were mostly semiconductors without clear metallic resonances in both the Raman and the UV-vis-IR spectroscopy. The transistors made by the nanotube networks whose density was much larger than the percolation threshold also showed no metallic paths. Estimation based on the conductance change of semiconducting nanotubes in the SWNT network due to applied gate voltage difference (conductance difference for on and off state) indicated a preferential growth of semiconducting nanotubes with an advantage of water-assisted PECVD. The nanotube transistors showed 10(-5) of on/off ratio and approximately 8 cm2 V(-1) s(-1) of field effect mobility. PMID:19567966

  13. Plasma enhanced chemical vapor deposition of wear resistant gradual a-Si1-x:Cx:H coatings on nickel-titanium for biomedical applications

    NASA Astrophysics Data System (ADS)

    Niermann, Benedikt; Böke, Marc; Schauer, Janine-Christina; Winter, Jörg

    2010-03-01

    Plasma enhanced chemical vapor deposition has been used to deposit thin films with gradual transitions from silicon to carbon on Cu, Ni, stainless steel, and NiTi. Thus show low stress, elasticity, and wear resistance with excellent adhesion on all metals under investigation. Already at low Si concentrations of 10 at. % the intrinsic stress is considerably reduced compared to pure diamondlike carbon (DLC) films. The deposition process is controlled by optical emission spectroscopy. This technique has been applied to monitor the growth precursors and to correlate them with the film composition. The compositions of the films were determined by Rutherford backscattering spectroscopy and XPS measurements. Due to the elastic properties of the gradual transition and the excellent biocompatibility of DLC, the described film systems present a useful coating for biomedical applications.

  14. Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Yong Seung; Lee, Jae Hong; Kim, Young Duck; Jerng, Sahng-Kyoon; Joo, Kisu; Kim, Eunho; Jung, Jongwan; Yoon, Euijoon; Park, Yun Daniel; Seo, Sunae; Chun, Seung-Hyun

    2013-01-01

    A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during the methane decomposition process into their active species (CHx<4), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide a sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD.A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during the methane decomposition process into their active species (CHx<4), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide a sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD. Electronic supplementary information (ESI) available: Schematic diagram of the ICP-CVD system, substrate heating by plasma, differential-pumping technique for mass spectra measurement, and transport properties of a single-domain graphene device. See DOI. 10.1039/c2nr33034b

  15. Epitaxial thin films of YBa sub 2 Cu sub 3 O sub 7 minus x on LaAlO sub 3 substrates deposited by plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Chern, C.S.; Zhao, J.; Li, Y.Q.; Norris, P.; Kear, B.; Gallois, B.; Kalman, Z. )

    1991-01-14

    High quality epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) superconducting thin films (0.3 {mu}m thick) were grown on the closely lattice and thermal expansion matched substrate, LaAlO{sub 3}, which has low dielectric loss. The YBCO layers were prepared, {ital in} {ital situ}, by a microwave plasma-enhanced metalorganic chemical vapor deposition process. The films, which had mirror-like smooth surfaces, were deposited at a substrate temperature of 730 {degree}C with a partial pressure of 2 Torr of N{sub 2}O. The electrical resistance and magnetic susceptibility versus temperature of the as-deposited films show metallic behavior in the normal state and sharp superconducting transitions with {ital T}{sub {ital c}} ({ital R}=0) of 88 K. Critical current densities measured on patterned bridges were 5{times}10{sup 5} A/cm{sup 2} at 78 K for the films deposited on LaAlO{sub 3}. X-ray diffraction measurements indicate that films grow epitaxially in the plane of the substrate with axis perpendicular to the substrate surface.

  16. Effects of Ammonia Plasma Treatment on the Electrical Properties of Plasma-Enhanced Chemical Vapor Deposition Amorphous Hydrogenated Silicon Carbide Films

    NASA Astrophysics Data System (ADS)

    Li, Yan-Way; Chen, Chia-Fu

    2002-09-01

    Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited from a mixture of silane and methane gases using the plasma-enhanced chemical vapor deposition (PECVD) process. The properties of the film, following ammonia plasma treatment, are reported. A lower silane flow rate reduces the refractive index, but increases the carbon content and the optical band gap. Increasing the carbon concentration of the a-SiC:H films reduces the dielectric constant. The films were treated with ammonia plasma for various treatment periods. The original film has a smooth surface with a roughness of 0.231 nm, but increasing the ammonia plasma treatment period gradually roughens the surface. The chemical bonding nature of the a-SiC:H films with higher silicon content was investigated by X-ray photoelectron spectroscopy. Various nitrogen ionization species reacted with Si to promote the formation of silicon nitride. As a result, although the dielectric constant of the a-SiC:H films increased slightly, the leakage current density declined as the ammonia plasma treatment time increased.

  17. In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Sanden, M. C. M. van de

    2008-02-01

    In situ spectroscopic ellipsometry (SE) was applied to study the pyramidlike and pillarlike growth of Al doped ZnO (AZO) films deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition for transparent conductive oxide applications. Real time SE studies in the visible region allowed discerning between the two growth modes by addressing the time evolution of the bulk and surface roughness layer thickness. While the pillarlike mode is characterized by a constant growth rate, a slower rate in the initial stage (up to 150-200 nm film thickness), compared to the bulk, is observed for the growth of pyramidlike AZO films. The two modes differ also in terms of surface roughness development: a saturation behavior is observed for film thickness above 150-200 nm in the case of the pyramidlike films, while a slow linear increase with film thickness characterizes the pillarlike mode. By extending the SE analysis of the AZO films to the near infrared region, valuable information about the in grain properties could be extracted: excellent in grain mobility values, i.e., larger than 100 and 50 cm{sup 2}/V s, are determined for the pyramidlike and pillarlike AZO layers, respectively. The comparison between the outcome of the in situ real time SE studies and the ex situ electrical and chemical characterization highlights the limitations in the electron transport occurring in both types of films and allows one to address routes toward further improvement in AZO conductivity.

  18. The Surface Interface Characteristics of Vertically Aligned Carbon Nanotube and Graphitic Carbon Fiber Arrays Grown by Thermal and Plasma Enhanced Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance; Nguyen, Cattien; Li, Jun; Han, Jie; Meyyappan, M.

    2002-01-01

    The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.

  19. Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Hori, Takahiro; Mori, Tetsuya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2011-06-01

    The synthesis of microcrystalline 3C-SiC films on glass substrates at relatively low temperatures (<=600 °C) by the plasma-enhanced chemical transport method was carried out using a high-pressure pure hydrogen glow discharge. This method used the chemical erosion products of graphite and silicon in the hydrogen plasma as the deposition source. The temperature dependence of the etching rate of graphite and the generated volatile C-species were investigated by exposing sintered graphite to a pure hydrogen plasma at 100 Torr. Infrared absorption gas analysis indicated that the C-related film precursor generated from the graphite was mainly CH4. The etch rate of graphite reached a maximum at a sample temperature of 200 °C. The deposition rate of the SiC film prepared at a hydrogen pressure of 200 Torr increased monotonically from 14 to 29 nm min-1 with an increase in substrate temperature (Tsub) from 100 to 600 °C. The Si/C composition ratio in the films was independent of Tsub and all the film compositions were nearly stoichiometric. The prepared SiC films were microcrystalline 3C-SiC. Raman spectroscopy indicated that the film quality significantly depends on Tsub. The electrical conductivity of the films at room temperature was found to increase exponentially from 3 × 10-4 to 1.7 S cm-1 with Tsub.

  20. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    PubMed

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and

  1. Compositional effects on plasma-enhanced metalorganic chemical vapor deposition of YBa sub 2 Cu sub 3 O sub 7 minus x thin films

    SciTech Connect

    Zhao, J.; Chern, C.S.; Li, Y.Q.; Norris, P.; Gallois, B.; Kear, B.; Wu, X.D.; Muenchausen, R.E. )

    1991-06-17

    Epitaxial YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films with a zero resistance transition temperatures of about 90 K have been prepared, {ital in} {ital situ}, on LaAlO{sub 3} by a plasma-enhanced metalorganic chemical vapor deposition process at a substrate temperature of 670 {degree}C in 1 Torr partial pressure of N{sub 2}O. The composition of the films was varied systematically to investigate the effect of changes in the Ba/Y and Cu/Y ratio on the film properties. The results indicated that superconducting current densities exceeding 10{sup 6} A/cm{sup 2}, measured at 77 K by a transport method, could be obtained on films with an anomalously wide range of film compositions. Excess Cu (up to 60%) and deficiency in Ba (down to 30%) from their stoichiometric values did not significantly degrade the superconducting properties of the films. As the composition approached the Y-Ba-Cu ratio of 1-2-3, an improvement in surface morphology and a decrease in superconducting transition temperature were found.

  2. High-quality YBa sub 2 Cu sub 3 O sub 7 minus x thin films by plasma-enhanced metalorganic chemical vapor deposition at low temperature

    SciTech Connect

    Zhao, J.; Li, Y.Q.; Chern, C.S.; Lu, P.; Norris, P.; Gallois, B.; Kear, B.; Cosandey, F.; Wu, X.D.; Muenchausen, R.E.; Garrison, S.M. )

    1991-09-02

    Single-crystalline epitaxial YBa{sub 2}Cu{sub 3}O{sub 7-{ital x}} thin films with a sharp superconducting transition temperature of 90 K and a critical current density of 3.3{times}10{sup 6} A/cm{sup 2} at 77 K were prepared by a plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. The films were formed {ital in} {ital situ} on (100) LaAlO{sub 3} substrates at a temperature of 670 {degree}C in 2 Torr partial pressure of N{sub 2}O. X-ray analysis indicated that films grew epitaxially with the {ital c}-axis perpendicular to the substrate and the {ital a} and {ital b} axes uniformly aligned along the LaAlO{sub 3} (100) directions. High-resolution transmission electron microscopy along with electron diffraction revealed that the films grew epitaxially with atomically abrupt film-substrate interfaces. The high degree of epitaxial crystallinity of the films was also confirmed by Rutherford backscattering spectroscopy which gave a minimum channeling yield of 9%.

  3. A simple method to deposit palladium doped SnO{sub 2} thin films using plasma enhanced chemical vapor deposition technique

    SciTech Connect

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-11-15

    This work presents a simple method to deposit palladium doped tin oxide (SnO{sub 2}) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl{sub 4}) was used as precursor and oxygen (O{sub 2}, 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C{sub 5}HF{sub 6}O{sub 2}){sub 2}) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd{sub 2}Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 m{Omega} cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  4. Effect of power on interface and electrical properties of SiO2 films produced by plasma-enhanced chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Landheer, D.; Xu, D.-X.; Tao, Y.; Sproule, G. I.

    1995-02-01

    The effect of power on the electrical and interface properties of silicon dioxide films produced by direct plasma-enhanced chemical-vapor deposition, using nitrous oxide and silane with high helium dilution, has been investigated. Auger depth profiling measurements indicate that while the bulk of the films have no measurable impurities, the interface region contains about 1.6 x 10(exp 15) atoms/sq cm of nitrogen. In contrast to thermal oxides, there is no thick interface layer with a large intrinsic compressive stress. The interface-state densities of the films obtained from capacitance-voltage measurements on metal-oxide-semiconductor diodes increase with increasing plasma power, but these can be removed to some extent by high-temperature annealing at temperatures in the range 800-950 C. The flatband voltage is relatively insensitive to plasma power. Thermal oxide samples have been subjected to the plasma processes and these also show evidence of plasma damage. A thin layer produced at the interface by a separate plasma oxynitridation process is shown to be incapable of protecting the Si/SiO2 interface from the plasma damage produced by subsequent high-power plasma deposition processes. The nature of the interface states is discussed.

  5. Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

    NASA Astrophysics Data System (ADS)

    Ang, S. S.; Shi, Y. J.; Brown, W. D.

    1994-12-01

    The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silison (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 C for 60 s followed by reoxidtion for 60 s at 1000 C in an oxygen/ nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical vlaues of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4 x 10(exp 10) cm(exp -2) and 7 x 10(exp 10) eV(exp -1) cm(exp -2), respectively. Avalanche electron injection using electric field of 3-5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection vlaue. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide.

  6. Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Hee-Chul; Lee, Won-Jong

    2002-11-01

    Structural and electrical characteristics of Pb(Zr, Ti)O3 (PZT) ferroelectric thin films deposited on various Ir-based electrodes (Ir, IrO2, and Pt/IrO2) using electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. On the Ir electrode, stoichiometric PZT films with pure perovskite phase could be obtained over a very wide range of processing conditions. However, PZT films prepared on the IrO2 electrode contain a large amount of PbOx phases and exhibited high Pb-excess composition. The deposition characteristics were dependent on the behavior of PbO molecules on the electrode surface. The PZT thin film capacitors prepared on the Ir bottom electrode showed different electrical properties depending on top electrode materials. The PZT capacitors with Ir, IrO2, and Pt top electrodes showed good leakage current characteristics, whereas those with the Ru top electrode showed a very high leakage current density. The PZT capacitor exhibited the best fatigue endurance with an IrO2 top electrode. An Ir top electrode provided better fatigue endurance than a Pt top electrode. The PZT capacitor with an Ir-based electrode is thought to be attractive for the application to ferroelectric random access memory devices because of its wide processing window for a high-quality ferroelectric film and good polarization, fatigue, and leakage current characteristics.

  7. Structure, mechanical, and frictional properties of hydrogenated fullerene-like amorphous carbon film prepared by direct current plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Yongfu; Gao, Kaixiong; Zhang, Junyan

    2016-07-01

    In this study, fullerene like carbon (FL-C) is introduced in hydrogenated amorphous carbon (a-C:H) film by employing a direct current plasma enhanced chemical vapor deposition. The film has a low friction and wear, such as 0.011 and 2.3 × 10-9mm3/N m in the N2, and 0.014 and 8.4 × 10-8mm3/N m in the humid air, and high hardness and elasticity (25.8 GPa and 83.1%), to make further engineering applications in practice. It has several nanometers ordered domains consisting of less frequently cross-linked graphitic sheet stacks. We provide new evidences for understanding the reported Raman fit model involving four vibrational frequencies from five, six, and seven C-atom rings of FL-C structures, and discuss the structure evolution before or after friction according to the change in the 1200 cm-1 Raman band intensity caused by five- and seven-carbon rings. Friction inevitably facilitates the transformation of carbon into FL-C nanostructures, namely, the ultra low friction comes from both such structures within the carbon film and the sliding induced at friction interface.

  8. Fine-tuning of catalytic tin nanoparticles by the reverse micelle method for direct deposition of silicon nanowires by a plasma-enhanced chemical vapour technique.

    PubMed

    Poinern, Gérrard E J; Ng, Yan-Jing; Fawcett, Derek

    2010-12-15

    The reverse micelle method was used for the reduction of a tin (Sn) salt solution to produce metallic Sn nanoparticles ranging from 85 nm to 140 nm in diameter. The reverse micellar system used in this process was hexane-butanol-cetyl trimethylammonium bromide (CTAB). The diameters of the Sn nanoparticles were proportional to the concentration of the aqueous Sn salt solution. Thus, the size of the Sn nanoparticles can easily be controlled, enabling a simple, reproducible mechanism for the growth of silicon nanowires (SiNWs) using plasma-enhanced chemical vapour deposition (PECVD). Both the Sn nanoparticles and silicon nanowires were characterised using field-emission scanning electron microscopy (FE-SEM). Further characterisations of the SiNW's were made using transmission electron microscopy (TEM), atomic force microscopy (AFM) and Raman spectroscopy. In addition, dynamic light scattering (DLS) was used to investigate particle size distributions. This procedure demonstrates an economical route for manufacturing reproducible silicon nanowires using fine-tuned Sn nanoparticles for possible solar cell applications. PMID:20887996

  9. Electrical and Optical Properties of Si-Incorporated a-C:H Films via the Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Method.

    PubMed

    Kim, In Jun; Choi, Won Seok; Hong, Byungyou

    2016-05-01

    The optical and electrical properties of silicon-incorporated hydrogenated amorphous carbon (a-C:H:Si) films deposited via the radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) method using a mixture of CH4, H2, and SiH4 were observed. The silane gas whose ranged from 0 to 25 vol.% [SiH4/(SiH4 + CH4) was fed into the reactor while the other deposition parameters were kept constant. The basic properties of these films were investigated via Raman spectroscopy, UV-visible spectrometry, I-V measurement, and surface profiling. The experiment results showed that the film thickness increased from 300 nm to 800 nm for the same deposition time as the silane gas increased. The Raman spectrum obtained from the silicon-incorporated a-C:H films suggested that the film property changed from graphitic-like to more diamond-like. As the silane gas increased, the optical gap, E04, slightly increased from 1.98 eV to 2.62 eV. It was shown that the Si atoms incorporated into the a-C:H films reduced the size of the sp2 clusters. As for the I-V characteristics, the Si-incorporated a-C:H films had a lower leakage current than the a-C:H films without Si. PMID:27483937

  10. Si nanowires grown by Al-catalyzed plasma-enhanced chemical vapor deposition: synthesis conditions, electrical properties and application to lithium battery anodes

    NASA Astrophysics Data System (ADS)

    Toan, Le Duc; Moyen, Eric; Zamfir, Mihai Robert; Joe, Jemee; Kim, Young Woo; Pribat, Didier

    2016-01-01

    Silicon nanowires have been synhesized using Al as a catalyst. Silane (SiH4) diluted in H2 carrier gas was employed as Si precursor in a plasma enhanced chemical vapor deposition system operated at various temperatures (450 °C and 550 °C). Those growth temperatures, which are lower than the eutectic temperature in the Al-Si system (577 °C) suggests a vapor-solid-solid growth mechanism. Four point resistance measurements and back-gated current-voltage measurements indicated that silicon nanowires were heavily doped (p type), with a doping concentration of a few 1019 cm-3. We have measured hole mobility values of ˜16 cm2 V-1 s-1 at 450 °C and ˜30 cm2 V-1 s-1 at 550 °C. Transmission electron microscope analyses showed that the silicon nanowires were highly twinned even when they grow epitaxially on (111) Si substrates. We have also evaluated the use of those highly doped Si nanowires for lithium-ion battery anodes. We have observed a good cycling behavior during the first 65 charge-discharge cycles, followed by a slow capacity decay. After 150 cycles at a charge-discharge rate of 0.1 C, the electrode capacity was still 1400 mAh g-1. The ageing mechanism seems to be related to the delamination of the SiNWs from the stainless steel substrate on which they were grown.

  11. Effect of plasma parameters on characteristics of silicon nitride film deposited by single and dual frequency plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sahu, B. B.; Yin, Yongyi; Han, Jeon G.

    2016-03-01

    This work investigates the deposition of hydrogenated amorphous silicon nitride films using various low-temperature plasmas. Utilizing radio-frequency (RF, 13.56 MHz) and ultra-high frequency (UHF, 320 MHz) powers, different plasma enhanced chemical vapor deposition processes are conducted in the mixture of reactive N2/NH3/SiH4 gases. The processes are extensively characterized using different plasma diagnostic tools to study their plasma and radical generation capabilities. A typical transition of the electron energy distribution function from single- to bi-Maxwellian type is achieved by combining RF and ultra-high powers. Data analysis revealed that the RF/UHF dual frequency power enhances the plasma surface heating and produces hot electron population with relatively low electron temperature and high plasma density. Using various film analysis methods, we have investigated the role of plasma parameters on the compositional, structural, and optical properties of the deposited films to optimize the process conditions. The presented results show that the dual frequency power is effective for enhancing dissociation and ionization of neutrals, which in turn helps in enabling high deposition rate and improving film properties.

  12. Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor deposition.

    PubMed

    Luo, Zhiqiang; Lim, Sanhua; You, Yumeng; Miao, Jianmin; Gong, Hao; Zhang, Jixuan; Wang, Shanzhong; Lin, Jianyi; Shen, Zexiang

    2008-06-25

    The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input power and gas pressure. The resistibility of synthesized VA-SWNTs against ion bombardment etching was found to be closely related to the growth temperature. At relatively low temperature (500 °C), the VA-SWNTs were very susceptible to ion bombardments, which could induce structural defects, and even resulted in a structural transition to few-walled nanotubes. For capacitively coupled radio frequency (rf) PECVD operating at moderate gas pressure (0.3-10 Torr), the ion bombardment etching effect is mainly dependent on the ion flux, which is related to the plasma input power and gas pressure. PMID:21828659

  13. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    SciTech Connect

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C{sub 2}H{sub 2}/NH{sub 3} and C{sub 2}H{sub 2}/H{sub 2} with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH{sub 3} and H{sub 2}) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals)

  14. Effects of total CH 4/Ar gas pressure on the structures and field electron emission properties of carbon nanomaterials grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Qi, J. L.; Wang, X.; Zheng, W. T.; Tian, H. W.; Liu, C.; Lu, Y. L.; Peng, Y. S.; Cheng, G.

    2009-12-01

    The effects of total CH 4/Ar gas pressure on the growth of carbon nanomaterials on Si (1 0 0) substrate covered with CoO nanoparticles, using plasma-enhanced chemical vapor deposition (PECVD), were investigated. The structures of obtained products were correlated with the total gas pressure and changed from pure carbon nanotubes (CNTs) through hybrid CNTs/graphene sheets (GSs), to pure GSs as the total gas pressure changed from 20 to 4 Torr. The total gas pressure influenced the density of hydrogen radicals and Ar ions in chamber, which in turn determined the degree of how CoO nanoparticles were deoxidized and ion bombardment energy that governed the final carbon nanomaterials. Moreover, the obtained hybrid CNTs/GSs exhibited a lower turn-on field (1.4 V/μm) emission, compared to either 2.7 V/μm for pure CNTs or 2.2 V/μm for pure GSs, at current density of 10 μA/cm 2.

  15. Effect of ion bombardment on the synthesis of vertically aligned single-walled carbon nanotubes by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Luo, Zhiqiang; Lim, Sanhua; You, Yumeng; Miao, Jianmin; Gong, Hao; Zhang, Jixuan; Wang, Shanzhong; Lin, Jianyi; Shen, Zexiang

    2008-06-01

    The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input power and gas pressure. The resistibility of synthesized VA-SWNTs against ion bombardment etching was found to be closely related to the growth temperature. At relatively low temperature (500 °C), the VA-SWNTs were very susceptible to ion bombardments, which could induce structural defects, and even resulted in a structural transition to few-walled nanotubes. For capacitively coupled radio frequency (rf) PECVD operating at moderate gas pressure (0.3-10 Torr), the ion bombardment etching effect is mainly dependent on the ion flux, which is related to the plasma input power and gas pressure.

  16. Structural and electrical properties and current–voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Masato; Murakami, Kazuki; Magara, Kohei; Nakamura, Kazuki; Ohashi, Haruka; Tokuda, Kengo; Takami, Takahiro; Ogasawara, Haruka; Enta, Yoshiharu; Suzuki, Yushi; Ando, Satoshi; Nakazawa, Hideki

    2016-06-01

    We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using CH4, N2, and Ar, and investigated the effects of N doping on the structure and the electrical, mechanical, and optical properties of the N-DLC films. We fabricated undoped DLC/p-type Si and N-DLC/p-type Si heterojunctions and examined the current–voltage characteristics of the heterojunctions. When the N2 flow ratio was increased from 0 to 3.64%, the resistivity markedly decreased from the order of 105 Ω·cm to that of 10‑2 Ω·cm and the internal stress also decreased. The resistivity gradually increased with increasing N2 flow ratio from 3.64 to 13.6%, and then it decreased at a N2 flow ratio of 13.6%. These behaviors can be explained in terms of the clustering of sp2 carbons and the formation of sp3C–N, sp2C=N, sp1C≡N, and C–H n bonds. The rectification ratio of the heterojunction using the N-DLC film prepared at 3.64% was 35.8 at ±0.5 V.

  17. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    NASA Astrophysics Data System (ADS)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  18. Thermal expansion coefficient and thermomechanical properties of SiN(x) thin films prepared by plasma-enhanced chemical vapor deposition.

    PubMed

    Tien, Chuen-Lin; Lin, Tsai-Wei

    2012-10-20

    We present a new method based on fast Fourier transform (FFT) for evaluating the thermal expansion coefficient and thermomechanical properties of thin films. The silicon nitride thin films deposited on Corning glass and Si wafers were prepared by plasma-enhanced chemical vapor deposition in this study. The anisotropic residual stress and thermomechanical properties of silicon nitride thin films were studied. Residual stresses in thin films were measured by a modified Michelson interferometer associated with the FFT method under different heating temperatures. We found that the average residual-stress value increases when the temperature increases from room temperature to 100°C. Increased substrate temperature causes the residual stress in SiN(x) film deposited on Si wafers to be more compressive, but the residual stress in SiN(x) film on Corning glass becomes more tensile. The residual-stress versus substrate-temperature relation is a linear correlation after heating. A double substrate technique is used to determine the thermal expansion coefficients of the thin films. The experimental results show that the thermal expansion coefficient of the silicon nitride thin films is 3.27×10(-6)°C(-1). The biaxial modulus is 1125 GPa for SiN(x) film. PMID:23089776

  19. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    NASA Technical Reports Server (NTRS)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  20. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    SciTech Connect

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  1. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

    SciTech Connect

    Volintiru, I.; Creatore, M.; Kniknie, B. J.; Spee, C. I. M. A.; Sanden, M. C. M. van de

    2007-08-15

    Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance R{sub s} and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (R{sub s}<6 {omega}/{open_square} for a film thickness above 1200 nm) and very rough (>4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (R{sub s}{approx_equal}100 {omega}/{open_square} for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth.

  2. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2 chemistry

    NASA Astrophysics Data System (ADS)

    Wang, Junkang; Bulkin, Pavel; Florea, Ileana; Maurice, Jean-Luc; Johnson, Erik

    2016-07-01

    For the growth of hydrogenated microcrystalline silicon (μc-Si:H) thin films by low temperature plasma-enhanced chemical vapor deposition (PECVD), silicon tetrafluoride (SiF4) has recently attracted interest as a precursor due to the resilient optoelectronic performance of the resulting material and devices. In this work, μc-Si:H films are deposited at high rates (7 Å s‑1) from a SiF4 and hydrogen (H2) gas mixture by matrix-distributed electron cyclotron resonance PECVD (MDECR-PECVD). Increased substrate temperature and moderate ion bombardment energy (IBE) are demonstrated to be of vital importance to achieve high quality μc-Si:H films under such low process pressure and high plasma density conditions, presumably due to thermally-induced and ion-induced enhancement of surface species migration. Two well-defined IBE thresholds at 12 eV and 43 eV, corresponding respectively to SiF+ ion-induced surface and bulk atomic displacement, are found to be determinant to the final film properties, namely the surface roughness, feature size and crystalline content. Moreover, a study of the growth dynamics shows that the primary challenge to producing highly crystallized μc-Si:H films by MDECR-PECVD appears to be the nucleation step. By employing a two-step method to first prepare a highly crystallized seed layer, μc-Si:H films lacking any amorphous incubation layer have been obtained. A crystalline volume fraction of 68% is achieved with a substrate temperature as low as 120 °C, which is of great interest to broaden the process window for solar cell applications.

  3. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.

    PubMed

    Chao, Chung-Hua; Wei, Da-Hua

    2015-01-01

    In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application. PMID:26484561

  4. High-temperature degradation in plasma-enhanced chemical vapor deposition Al{sub 2}O{sub 3} surface passivation layers on crystalline silicon

    SciTech Connect

    Kühnhold, Saskia; Saint-Cast, Pierre; Kafle, Bishal; Hofmann, Marc; Colonna, Francesco; Zacharias, Margit

    2014-08-07

    In this publication, the activation and degradation of the passivation quality of plasma-enhanced chemical vapor deposited aluminum oxide (Al{sub 2}O{sub 3}) layers with different thicknesses (10 nm, 20 nm, and 110 nm) on crystalline silicon (c-Si) during long and high temperature treatments are investigated. As indicated by Fourier Transform Infrared Spectroscopy, the concentration of tetrahedral and octahedral sites within the Al{sub 2}O{sub 3} layer changes during temperature treatments and correlates with the amount of negative fixed charges at the Si/Al{sub 2}O{sub 3} interface, which was detected by Corona Oxide Characterization of Semiconductors. Furthermore, during a temperature treatment at 820 °C for 30 min, the initial amorphous Al{sub 2}O{sub 3} layer crystallize into the γ-Al{sub 2}O{sub 3} structure and was enhanced by additional oxygen as was proven by x-ray diffraction measurements and underlined by Density Functional Theory simulations. The crystallization correlates with the increase of the optical density up to 20% while the final Al{sub 2}O{sub 3} layer thickness decreases at the same time up to 26%. All observations described above were detected to be Al{sub 2}O{sub 3} layer thickness dependent. These observations reveal novel aspects to explain the temperature induced passivation and degradation mechanisms of Al{sub 2}O{sub 3} layers at a molecular level like the origin of the negative fixe charges at the Si/SiO{sub x}/Al{sub 2}O{sub 3} interface or the phenomena of blistering. Moreover, the crystal phase of Al{sub 2}O{sub 3} does not deliver good surface passivation due to a high concentration of octahedral sites leading to a lower concentration of negative fixed charges at the interface.

  5. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-12-01

    Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm2 for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10-6 Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm2 at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N2) plasma for 5 min and again field emission characteristics have been measured. The N2 plasma treated SWCNTs show a good enhancement in the field emission properties with emission current density 81.5 mA/cm2 at turn on field 1.2 V/μm. The as-grown and N2 plasma treated SWCNTs were also characterized by field emission scanning electron microscope (FESEM), high resolution transmission electron microscope (HRTEM), Raman spectrometer, Fourier transform infrared spectrometer (FTIR) and X-ray photoelectron spectroscopy (XPS).

  6. Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

    SciTech Connect

    Yang, Jaeyoung; Lee, Sungwoo; Park, Hyoungsun; Jung, Donggeun; Chae, Heeyeop

    2006-01-15

    We investigated the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of decamethyl-cyclopentasiloxane (C{sub 10}H{sub 30}O{sub 5}Si{sub 5}) and cyclohexane (C{sub 6}H{sub 12}) as the precursors, which we refer to as plasma polymerized decamethyl-cyclopentasiloxane: cyclohexane (PPDMCPSO:CHex) films. The relative dielectric constants, k, of the plasma polymer films were correlated with the Fourier transform infrared absorption peaks of the C-Hx, Si-CH{sub 3}, and Si-O related groups. As the amount of the CHx species in the as-deposited plasma polymer films increased, the k value and the leakage current density of the thin films decreased. The subsequent annealing of the PPDMCPSO:CHex film at 400 deg. C for 1 h further reduced the k value to as low as k=2.05. This annealed PPDMCPSO:CHex thin film showed a leakage current density of the order of 4x10{sup -7} A/cm{sup 2} at 1 MV/cm and a breakdown field of 6.5 MV/cm. Through the bias-temperature stress test, it was estimated that the PPDMCPSO:CHex film with a k value of 2.05 would retain its insulating properties for ten years at 167 deg. C under an electrical field of 1 MV/cm, when it is presented as a layer adjacent to Cu/TaN(10 nm)

  7. Use of SiBN and SiBON films prepared by plasma enhanced chemical vapor deposition from borazine as interconnection dielectrics

    SciTech Connect

    Kane, W.F.; Cohen, S.A.; Hummel, J.P.; Luther, B.; Beach, D.B.

    1997-02-01

    Thin films of silicon boron nitride (SiBN) of typical composition Si{sub 0.09}B{sub 0.39}N{sub 0.51} and silicon boron oxynitride (SiBON) of typical composition Si{sub 0.16}B{sub 0.29}O{sub 0.41}N{sub 0.14} were prepared by plasma enhanced chemical vapor deposition and the properties of these films were evaluated with respect to their suitability as interconnection dielectrics in microelectronic fabrication. Films were deposited on 125 mm silicon substrates in a parallel-plate reactor at a substrate temperature of 400 C and a plasma power of 0.5 W/cm{sup 2}. Boron nitride, for comparison of electrical properties, was deposited from borazine (B{sub 3}N{sub 3}H{sub 6}); silicon boron nitride was deposited from borazine, disilane (Si{sub 2}H{sub 6}), and ammonia (NH{sub 3}); silicon boron oxynitride was deposited from borazine, disilane, ammonia, and nitrous oxide (N{sub 2}O). Metal-insulator-metal capacitors were fabricated and electrical measurements indicated that all three films had excellent dielectric properties with dielectric constants of 4.1, 4.7, and 3.9 for BN, SiBN, and SiBON, respectively. Tests of conformality indicated that deposition into trenches with an aspect ratio of 4:1 gave conformality greater than 70%. Silicon boron oxynitride was shown to be an excellent barrier to the diffusion of copper. A planar, single level metal-insulator structure was constructed using a SiBN/SiBON insulator with copper metallization.

  8. Deposition of Amorphous Silicon and Silicon-Based Dielectrics by Remote Plasma-Enhanced Chemical Vapor Deposition: Application to the Fabrication of Tft's and Mosfet's.

    NASA Astrophysics Data System (ADS)

    Kim, Sang Soo

    1990-01-01

    This thesis discusses the deposition of device quality silicon dioxide (SiO_2), silicon nitride (Si_3N_4 ), and hydrogenated amorphous silicon (a-Si:H) by the remote plasma enhanced chemical vapor deposition (Remote PECVD) technique at low substrate temperature (100 ^circC < T _{rm s} < 450^ circC). An ultra-high-vacuum (UHV) compatible, multi-chamber integrated processing system has been built and used for this study. This system provides: (1) in -situ substrate processing; (2) surface analysis by Auger electron spectroscopy (AES) and reflected high energy electron diffraction (RHEED); and (3) thin film deposition by Remote PECVD. Six issues are addressed: (1) in-situ semiconductor surface cleaning for Si, Ge, GaAs, and CdTe; (2) substrate surface characterization by using RHEED and AES; (3) process gas-substrate interactions (subcutaneous oxidation) occurring during the thin film deposition; (4) the thin film deposition process for silicon-based dielectrics and for doped and intrinsic amorphous silicon; (5) physical properties of the thin films deposited by Remote PECVD using in-situ AES, and ex-situ infrared (ir) spectroscopy and ellipsometry; and (6) electrical performance of thin films in device structures including metal-oxide/or insulator-semiconductor (MOS or MIS) capacitors formed on silicon, and hydrogenated -amorphous silicon thin film transistors (a-Si:H TFT's). Atomically clean semiconductor surfaces are obtained by a remote hydrogen plasma treatment prior to thin film deposition. In the remote PECVD process the process gases are selectively excited, the silane reactant, the source of silicon atoms in the films is never directly plasma excited, and the substrate is also remote from the plasma discharge region. These differences between the remote PECVD process and the conventional direct PECVD process, result in improved control of the insulator stoichiometry, and a reduction in level of chemical impurities such as hydrogen. We find that the

  9. Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sungwoo; Yang, Jaeyoung; Yeo, Sanghak; Lee, Jaewon; Jung, Donggeun; Boo, Jin-hyo; Kim, Hyoungsub; Chae, Heeyeop

    2007-02-01

    We investigated the effect of annealing temperature on the properties of SiCOH films deposited by plasma-enhanced chemical vapor deposition using or a mixture of Si-O containing and hydrocarbon precursors, decamethyl-cyclopentasiloxane (DMCPSO-C10H30O5Si5) and cyclohexane (CHex-C6H12). These SiCOH films were deposited at pressures of 0.6 and 1.5 Torr and the as-deposited SiCOH films were subjected to annealing temperatures from 25 to 500 °C in a furnace for 1 h in N2 ambient at a pressure of 1 atm. The relative dielectric constants, k, of the SiCOH films deposited at 0.6 and 1.5 Torr were 2.76 and 2.26, respectively, before the annealing process. The subsequent annealing of the SiCOH film at 500 °C further reduced the k values to as low as 2.31 and 1.85, respectively. Decreases in the refractive index, hardness, and modulus were observed as the annealing temperature increased to 450 °C. However, further increasing annealing temperature to 500 °C caused the refractive index, hardness, and modulus to increase again. Trends of decreases in both the hardness and modulus with increasing annealing temperature were found. The refractive index and the film thickness retention also decreased with increasing annealing temperature. The change in the k value as a function of the annealing temperature was correlated with the change in the Fourier transform infrared absorption peaks of C-Hx, Si-CH3, and Si-O related groups. As the annealing temperature increased, the intensity of both the CHx and Si-CH3 peaks decreased, respectively. In particular, the C-H2 (asymmetric and symmetric) peaks provide direct evidence of the presence of ethylene groups in the SiCOH films. Thus the decrease in intensity of the peaks corresponding to the CHx groups and Si-O cage structure in the SiCOH films was considered to be responsible for lowering they dielectric constant, refractive index, hardness and modulus of the films. The leakage current density of the SiCOH films at 1 MV/cm is obtained

  10. High-Quality Amorphous-Crystalline Silicon Heterostructures Using the Grid-Based Triode Radio-Frequency Plasma Enhanced Chemical Vapour Deposition Method

    NASA Astrophysics Data System (ADS)

    Mahtani, Pratish

    The amorphous-crystalline silicon heterojunction (SHJ) represents a new paradigm in crystalline silicon (c-Si) photovoltaics (PV). To achieve the 27% efficiency target for SHJ PV, defects in the silicon heterointerface must be minimized by growing high-quality hydrogenated amorphous silicon (a-Si:H) onto the c-Si surfaces without deposition-related damage. Typically, a-Si:H is deposited using radio-frequency (RF) plasma enhanced chemical vapour deposition (PECVD), which in its conventional configuration directly exposes the c-Si growth surface to the ignited plasma. In this thesis, silicon heterostructures prepared by the grid-based triode RF PECVD method is investigated for the first time. The triode method allows for high-quality a-Si:H growth with the c-Si surfaces shielded from any potential plasma damage. Using a custom-built configurable PECVD facility, a systematic study was conducted and it was demonstrated that the triode method affords the preparation of a-Si:H with excellent bulk film quality and state-of-the-art passivation for c-Si surfaces. Using the triode method, an effective minority carrier lifetime (taueff) of 8.1 ms and an Auger-corrected surface recombination velocity (S) of 2.4 cm/s at an excess carrier density of 1015 cm-3 have been achieved for 1-2 ohm-cm n-type c-Si passivated with intrinsic a-Si:H. Further, using the triode method to deposit thin-layers of intrinsic and doped a-Si:H, a conventional SHJ solar cell structure was prepared and was found to exhibit an excellent implied Voc of 710 mV. Under all conditions scanned, samples prepared in the triode configuration showed improved passivation compared with samples prepared in the conventional diode configuration with the best triode prepared sample showing a nearly threefold increase in taueff and a twofold decrease in S compared with the best diode prepared sample. Furthermore, a-Si:H deposited using the triode method showed significantly improved bulk properties compared to diode

  11. Microwave-assisted synthesis of chromenes: biological and chemical importance.

    PubMed

    Patil, Shivaputra A; Patil, Siddappa A; Patil, Renukadevi

    2015-01-01

    Chromenes constitute chemically important class of heterocyclic compounds having diverse biological and chemical importance. Development of environmentally benign, efficient and economical methods for the synthesis of chromenes remains a significant challenge in synthetic chemistry. The synthesis of chromenes, therefore, has attracted enormous attention from medicinal and organic chemists. Researchers have embraced the concepts of microwave (high speed) synthesis to produce biologically and chemically important chromenes in a time sensitive manner. This review will summarize the recent biological applications such as anticancer, antimicrobial, neurodegenerative and insecticidal activity of new chromenes prepared via microwave irradiation. The development of new methodologies for the synthesis of chromenes including green chemistry processes has also been discussed. PMID:26061107

  12. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-02-01

    Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  13. GREENER CHEMICAL SYNTHESES USING MICROWAVE IRRADIATION

    EPA Science Inventory

    Greener solvent-free protocols involve microwave (MW) exposure of neat reactants catalyzed by the surfaces of recyclable mineral supports such as alumina, silica and clay which are applicable to a wide range of cleavage, condensation, cyclization, oxidation and reduction reaction...

  14. 'GREENER' CHEMICAL SYNTHESIS USING MICROWAVE IRRADIATION

    EPA Science Inventory

    A solvent-free approach that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of recyclable mineral supports such as alumina, silica, clay, or 'doped' surfaces is presented which is applicable to a wide range of cleavage, condensation, cycl...

  15. EFFICIENT AND GREENER CHEMICAL SYNTHESES USING MICROWAVE IRRADIATION

    EPA Science Inventory

    The diverse nature of chemical entities requires various ‘green’ strategic pathways in our quest towards attaining sustainability. A solvent-free approach involving microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of less-expensive and rec...

  16. ADVANCES IN GREEN CHEMISTRY: CHEMICAL SYNTHESES USING MICROWAVE IRRADIATION, ISBN 81-901238-5-8

    EPA Science Inventory

    16. Abstract Advances in Green Chemistry: Chemical Syntheses Using Microwave Irradiation
    Microwave-accelerated chemical syntheses in solvents as well as under solvent-free conditions have witnessed an explosive growth. The technique has found widespread application predomi...

  17. Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50 °C

    NASA Astrophysics Data System (ADS)

    Lu, Yi; Kobayashi, Akiko; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru

    2014-01-01

    We report the temporal evolution of surface species observed in situ using attenuated total reflection Fourier transform infrared absorption spectroscopy (ATR-FTIR) during plasma-enhanced atomic layer deposition (PE-ALD) of SiO2 films employing aminosilane and an O2/Ar plasma at a temperature of 50 °C. Reversals in the appearance of IR absorbance features associated with SiO-H, C-Hx, and Si-H proved to coincide with the self-limiting reaction property in ALD. Our IR results indicate that an O2/Ar plasma can both removed CHx groups and transform SiH surface species to SiOH. In addition, SiO2 deposition was confirmed by a continuous increase in Si-O absorbance with each PE-ALD step, which becomes stable after several cycles. On the basis of our results, the mechanism of low temperature SiO2 PE-ALD was discussed.

  18. The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

    PubMed

    Wu, Chien-Hung; Huang, Bo-Wen; Chang, Kow-Ming; Wang, Shui-Jinn; Lin, Jian-Hong; Hsu, Jui-Mei

    2016-06-01

    The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7). PMID:27427669

  19. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    SciTech Connect

    Podhorodecki, A. Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  20. Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H{sub 2} dilution of SiH{sub 4}

    SciTech Connect

    Wang Xiang; Huang Rui; Song Jie; Guo Yanqing; Ding Honglin

    2010-06-15

    Nanocrystalline silicon (nc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H{sub 2} dilution of SiH{sub 4} has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. It is found that at early growth stage the initial amorphous incubation layer in nc-Si:H growth on silicon oxide can be almost eliminated and crystallites with diameter of about 6 to 10 nm are directly formed on the silicon oxide. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. It is considered that highly H{sub 2} dilution and higher excitation frequency are the main reason for eliminating the initial amorphous incubation layer in nc-Si:H growth on silicon oxide.

  1. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    SciTech Connect

    Choi, Bum Ho Lee, Jong Ho

    2014-08-04

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer.

  2. Plasma enhanced chemical vapor deposition of wear resistant gradual a-Si{sub 1-x}:C{sub x}:H coatings on nickel-titanium for biomedical applications

    SciTech Connect

    Niermann, Benedikt; Boeke, Marc; Schauer, Janine-Christina; Winter, Joerg

    2010-03-15

    Plasma enhanced chemical vapor deposition has been used to deposit thin films with gradual transitions from silicon to carbon on Cu, Ni, stainless steel, and NiTi. Thus show low stress, elasticity, and wear resistance with excellent adhesion on all metals under investigation. Already at low Si concentrations of 10 at. % the intrinsic stress is considerably reduced compared to pure diamondlike carbon (DLC) films. The deposition process is controlled by optical emission spectroscopy. This technique has been applied to monitor the growth precursors and to correlate them with the film composition. The compositions of the films were determined by Rutherford backscattering spectroscopy and XPS measurements. Due to the elastic properties of the gradual transition and the excellent biocompatibility of DLC, the described film systems present a useful coating for biomedical applications.

  3. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2014-04-01

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  4. Chemical vapor deposition coating of fibers using microwave application

    NASA Technical Reports Server (NTRS)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  5. Microwave detection of chemical agents: a review. Special publication, January 1982-July 1984

    SciTech Connect

    Christensen, S.D.

    1986-06-01

    This report represents an overview of microwave-detection techniques and an analysis of their possible application to chemical agent point and remote sensing. Microwave rotational spectroscopy and millimeter-wavelength radar are also discussed.

  6. Oxygen incorporation in highly c -axis oriented YBa sub 2 Cu sub 3 O sub 7 minus x thin films deposited by plasma-enhanced metalorgainic chemical vapor deposition

    SciTech Connect

    Li, Y.Q.; Zhao, J.; Chern, C.S.; Lemoine, E.E.; Gallois, B.; Norris, P.; Kear, B. )

    1991-05-20

    YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} superconducting thin films prepared by chemical vapor deposition which exhibit high transition temperatures ({ital T}{sub {ital c}}{similar to}90 K) and high critical current densities ({ital J}{sub {ital c}}{gt}10{sup 6} A/cm{sup 2} at 77.7 K and 0 T) generally have copper-rich precipitates on the surface. We have studied both near-stoichiometric and nonstoichiometric highly {ital c}-axis oriented thin films formed by plasma-enhanced metalorganic chemical vapor deposition. We show that the reduction in transport properties ({ital T}{sub {ital c}} and {ital J}{sub {ital c}}) observed in stoichiometric films with smooth morphologies may result from a dramatic reduction of the oxygen diffusion rate in these thin films as compared to nonstoichiometric films. The significant enhancement of the transport properties of these films was achieved by further oxygen anneals at 480 {degree}C.

  7. Microwave separation of organic chemicals from mixed hazardous waste

    SciTech Connect

    Anderson, A.A.; Albano, R.K.

    1992-08-01

    The feasibility of utilizing the differential heating characteristics of microwave energy (MW) to aid in the chemical extraction and separation process of hazardous organic compounds from mixed hazardous waste, was studied at the INEL. The long-term objective of this work was to identify a practical method of separating or enhancing the separation process of organic hazardous waste components from mixed waste using microwave (MW) frequency radiation. Methods using MW energy for calcination, solidification, and drying of radioactive waste from nuclear facilities is becoming more attractive. In order to study the effectiveness of MW heating, samples of several organic chemicals simulating those which may be found at the Radioactive Waste Management Complex at the INEL were exposed to MW energy. Vapor collection and analysis was performed as a function of time, signal frequency, and MW power throughout the process. Signal frequencies ranging from 900 MHz t 8000 MHz were used. Although the signal frequency bandwidth of the selectivity was quite broad, for the material tested an indication of the frequency dependence in the selectivity of MW heating was given. Greater efficiency in terms of energy used and time required was observed. The relatively large electromagnetic field intensities generated at the resonant frequencies which were supported by the cavity sample holder demonstrated the use of cavity resonance to aid in the process of differential heating.

  8. Microwave separation of organic chemicals from mixed hazardous waste

    SciTech Connect

    Anderson, A.A.; Albano, R.K.

    1992-01-01

    The feasibility of utilizing the differential heating characteristics of microwave energy (MW) to aid in the chemical extraction and separation process of hazardous organic compounds from mixed hazardous waste, was studied at the INEL. The long-term objective of this work was to identify a practical method of separating or enhancing the separation process of organic hazardous waste components from mixed waste using microwave (MW) frequency radiation. Methods using MW energy for calcination, solidification, and drying of radioactive waste from nuclear facilities is becoming more attractive. In order to study the effectiveness of MW heating, samples of several organic chemicals simulating those which may be found at the Radioactive Waste Management Complex at the INEL were exposed to MW energy. Vapor collection and analysis was performed as a function of time, signal frequency, and MW power throughout the process. Signal frequencies ranging from 900 MHz t 8000 MHz were used. Although the signal frequency bandwidth of the selectivity was quite broad, for the material tested an indication of the frequency dependence in the selectivity of MW heating was given. Greater efficiency in terms of energy used and time required was observed. The relatively large electromagnetic field intensities generated at the resonant frequencies which were supported by the cavity sample holder demonstrated the use of cavity resonance to aid in the process of differential heating.

  9. A microwave and quantum chemical study of allyltrifluorosilane

    NASA Astrophysics Data System (ADS)

    Møllendal, H.; Guirgis, G. A.

    2003-04-01

    The structural and conformational properties of allytrifluorsilane, H 2CCH-CH 2-SiF 3, have been explored by microwave (MW) spectroscopy and high-level ab initio and density functional theory quantum chemical calculations. The microwave spectrum was investigated in the 18-62 GHz spectral regions. The a-type R-branch transitions of one conformer were assigned for the ground as well as for 10 vibrationally excited states. The CC-C-Si chain of atoms in this rotamer takes an anti-clinal ('skew') conformation, with a dihedral angle calculated to be 111.6° from the syn-periplanar (0°) conformation. The question whether a CC-C-Si syn-periplanar conformer exists as a high-energy form in the gas phase remains open. In most of the quantum chemical calculations this conformation is predicted to be a transition state. However, in the most advanced calculations (B3LYP/aug-cc-pVTZ level of theory) the syn-periplanar conformer is predicted to be a stable rotamer that is calculated to be 6.5 kJ/mol higher in energy than the anti-clinal form. Since there is no indication in the MW spectrum for the presence of high-energy form(s), it is concluded that the anti-clinal conformer is at least 4 kJ/mol more stable than any other hypothetical rotamer.

  10. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    NASA Astrophysics Data System (ADS)

    Li, Y. S.; Hirose, A.

    2007-04-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370to740°C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface.

  11. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

    NASA Astrophysics Data System (ADS)

    Aoukar, M.; Szkutnik, P. D.; Jourde, D.; Pelissier, B.; Michallon, P.; Noé, P.; Vallée, C.

    2015-07-01

    Amorphous and smooth GeTe thin films are deposited on 200 mm silicon substrates by plasma enhanced—metal organic chemical vapor deposition (PE-MOCVD) using the commercial organometallic precursors TDMAGe and DIPTe as Ge and Te precursors, respectively. X-ray photoelectron spectroscopy (XPS) measurements show a stoichiometric composition of the deposited GeTe films but with high carbon contamination. Using information collected by Optical Emission Spectroscopy (OES) and XPS, the origin of carbon contamination is determined and the dissociation mechanisms of Ge and Te precursors in H2 + Ar plasma are proposed. As a result, carbon level is properly controlled by varying operating parameters such as plasma radio frequency power, pressure and H2 rate. Finally, GeTe films with carbon level as low as 5 at. % are obtained.

  12. Fundamental studies of defect generation in amorphous silicon alloys grown by remote plasma-enhanced chemical-vapor deposition. Final subcontract report, 1 July 1989--31 December 1992

    SciTech Connect

    Lucovsky, G.

    1993-08-01

    This report describes research to reduce the intrinsic bonding defects in amorphous and microcrystalline Si alloys by controlling the bonding chemistry and the microstructure via the deposition process reactions. The specific approach was to use remote plasma-enhanced, chemical-vapor deposition (PECVD) and reactive magnetron sputtering to limit the multiplicity of deposition inaction pathways, and thereby gain increased control over the thin-film chemistry and microstrucre. The research included (1) the deposition of amorphous and microcrystalline Si alloy materials by the PECVD process and by reactive magnetron sputtering, and (2) the evaluation of the material properties of these films for potential applications in PV devices. The focus of the research was on pining a fundamental understanding of the relationships between deposition reaction pathways, the bonding of dopant and alloy atoms, and the electrical provides of importance for PV applications. This involved studying the factors that contribute to defect generation and to defect removal and/or neutralization. In addition to the experimental studies, the research also included theoretical and modeling studies aimed at understanding the relationships between local atomic arrangements of Si and alloy atoms, and the electrical, optical, vibrational, and defect properties.

  13. Effect of Si and C concentration on the microstructure, and the mechanical, tribological and electrochemical properties of nanocomposite TiC/a-SiC:H/a-C:H coatings prepared by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Duanjie; Hassani, Salim; Poulin, Suzie; Szpunar, Jerzy A.; Martinu, Ludvik; Klemberg-Sapieha, Jolanta E.

    2012-02-01

    The nanocomposite TiC/a-SiC:H/a-C:H (presented as Ti-Si-C) coatings attract considerable interest due to their possible applications such as wear protective coatings, diffusion barriers, and materials for solar cells and electrical contacts. In order to explore new film properties and open new opportunities, in the present work, we prepare a series of C-rich Ti-Si-C coatings with different Si and C concentrations using plasma enhanced chemical vapor deposition, and we systematically investigate the effect of elemental composition on the microstructure, and on the mechanical, tribological and electrochemical properties. XRD and XPS analyses demonstrate that the Ti-Si-C coatings mainly consist of nanocrystalline (nc-) TiC embedded in amorphous (a-) SiC:H and a-C:H matrices. Ti-Si-C coatings with a high Si concentration possess enhanced mechanical properties (high hardness), while those with additional C exhibit superior tribological behaviors. The increase of Si and/or C concentrations leads to a grain size refinement of the TiC nanocrystals and to an expansion of the amorphous phase. This in turn substantially enhances their corrosion resistance. Ti-Si-C coatings with the highest Si or C contents exhibit the best corrosion performance among the tested samples by improving the corrosion resistance of the SS410 substrate by a factor of ˜400.

  14. Organo-Chlorinated Thin Films Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition for Adhesion Enhancement between Rubber and Zinc-Plated Steel Monofilaments.

    PubMed

    Vandenabeele, Cédric; Bulou, Simon; Maurau, Rémy; Siffer, Frederic; Belmonte, Thierry; Choquet, Patrick

    2015-07-01

    A continuous-flow plasma process working at atmospheric pressure is developed to enhance the adhesion between a rubber compound and a zinc-plated steel monofilament, with the long-term objective to find a potential alternative to the electrolytic brass plating process, which is currently used in tire industry. For this purpose, a highly efficient tubular dielectric barrier discharge reactor is built to allow the continuous treatment of "endless" cylindrical substrates. The best treatment conditions found regarding adhesion are Ar/O2 plasma pretreatment, followed by the deposition from dichloromethane of a 75 nm-thick organo-chlorinated plasma polymerized thin film. Ar/O2 pretreatment allows the removal of organic residues, coming from drawing lubricants, and induces external growth of zinc oxide. The plasma layer has to be preferably deposited at low power to conserve sufficient hydrocarbon moieties. Surface analyses reveal the complex chemical mechanism behind the establishment of strong adhesion levels, more than five times higher after the plasma treatment. During the vulcanization step, superficial ZnO reacts with the chlorinated species of the thin film and is converted into porous and granular bump-shaped ZnwOxHyClz nanostructures. Together, rubber additives diffuse through the plasma layer and lead to the formation of zinc sulfide on the substrate surface. Hence, two distinct interfaces, rubber/thin film and thin film/substrate, are established. On the basis of these observations, hypotheses explaining the high bonding strength results are formulated. PMID:26069994

  15. A nucleation and growth model of vertically-oriented carbon nanofibers or nanotubes by plasma-enhanced catalytic chemical vapor deposition.

    PubMed

    Cojocaru, C S; Senger, A; Le Normand, F

    2006-05-01

    Carbon nanofibers are grown by direct current and hot filaments-activated catalytic chemical vapor deposition while varying the power of the hot filaments. Observations of these carbon nanofibers vertically oriented on a SiO2 (8 nm thick)/Si(100) substrate covered with Co nanoparticles (10-15 nm particle size) by Scanning Electron and Transmission Electron Microscopies show the presence of a graphitic "nest" either on the surface of the substrate or at the end of the specific nanofiber that does not encapsulate the catalytic particle. Strictly in our conditions, the activation by hot filaments is required to grow nanofibers with a C2H2 - H2 gas mixture, as large amounts of amorphous carbon cover the surface of the substrate without using hot filaments. From these observations as well as data of the literature, it is proposed that the nucleation of carbon nanofibers occurs through a complex process involving several steps: carbon concentration gradient starting from the catalytic carbon decomposition and diffusion from the surface of the catalytic nanoparticles exposed to the activated gas and promoted by energetic ionic species of the gas phase; subsequent graphitic condensation of a "nest" at the interface of the Co particle and substrate. The large concentration of highly reactive hydrogen radicals mainly provided by activation with hot filaments precludes further spreading out of this interfacial carbon nest over the entire surface of the substrate and thus selectively orientates the growth towards the condensation of graphene over facets that are perpendicular to the surface. Carbon nanofibers can then be grown within the well-known Vapor-Liquid-Solid process. Thus the effect of energetic ions and highly reactive neutrals like atomic hydrogen in the preferential etching of carbon on the edge of graphene shells and on the broadening of the carbon nanofiber is underlined. PMID:16792361

  16. Microwave processing of epoxy resins and synthesis of carbon nanotubes by microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zong, Liming

    Microwave processing of advanced materials has been studied as an attractive alternative to conventional thermal processing. In this dissertation, work was preformed in four sections. The first section is a review on research status of microwave processing of polymer materials. The second section is investigation of the microwave curing kinetics of epoxy resins. The curing of diglycidyl ether of bisphenol A (DGEBA) and 3, 3'-diaminodiphenyl sulfone (DDS) system under microwave radiation at 145 °C was governed by an autocatalyzed reaction mechanism. A kinetic model was used to describe the curing progress. The third section is a study on dielectric properties of four reacting epoxy resins over a temperature range at 2.45 GHz. The epoxy resin was DGEBA. The four curing agents were DDS, Jeffamine D-230, m-phenylenediamine, and diethyltoluenediamine. The mixtures of DGEBA and the four curing agents were stoichiometric. The four reacting systems were heated under microwave irradiation to certain cure temperatures. Measurements of temperature and dielectric properties were made during free convective cooling of the samples. The cooled samples were analyzed with a Differential Scanning Calorimeter to determine the extents of cure. The Davidson-Cole model can be used to describe the dielectric data. A simplified Davidson-Cole expression was proposed to calculate the parameters in the Davidson-Cole model and describe the dielectric properties of the DGEBA/DDS system and part of the dielectric data of the other three systems. A single relaxation model was used with the Arrhenius expression for temperature dependence to model the results. The evolution of all parameters in the models during cure was related to the decreasing number of the epoxy and amine groups in the reactants and the increasing viscosity of the reacting systems. The last section is synthesis of carbon nanotubes (CNTs) on silicon substrate by microwave plasma chemical vapor deposition of a gas mixture of

  17. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    PubMed

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  18. Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF{sub 4}/N{sub 2}/H{sub 2} mixtures

    SciTech Connect

    Fandino, J.; Santana, G.; Rodriguez-Fernandez, L.; Cheang-Wong, J.C.; Ortiz, A.; Alonso, J.C.

    2005-03-01

    Fluorinated silicon-nitride films have been prepared at low temperature (250 deg. C) by remote plasma enhanced chemical vapor deposition using mixtures of SiF{sub 4}, N{sub 2}, Ar, and various H{sub 2} flow rates. The deposited films were characterized by means of single wavelength ellipsometry, infrared transmission, resonant nuclear reactions, Rutherford backscattering analysis, and current-voltage measurements. It was found that films deposited without hydrogen grow with the highest deposition rate, however, they result with the highest fluorine content ({approx}27 at. %) and excess of silicon (Si/N ratio{approx_equal}1.75). These films also have the lowest refractive index and the highest etch rate, and exhibit very poor dielectric properties. As a consequence of the high fluorine content, these films hydrolize rapidly upon exposure to the ambient moisture, forming Si-H and N-H bonds, however, they do not oxidize completely. The addition of hydrogen to the deposition process reduces the deposition rate but improves systematically the stability and insulating properties of the films by reducing the amount of both silicon and fluorine incorporated during growth. All the fluorinated silicon-nitride films deposited at hydrogen flow rates higher than 3.5 sccm resulted free of Si-H bonds. In spite of the fact that films obtained at the highest hydrogen flow rate used in this work are still silicon rich (Si/N ratio{approx_equal}1.0) and contain a considerable amount of fluorine ({approx}16 at. %), they are chemically stable and show acceptable dielectric properties.

  19. pH-dependent immobilization of proteins on surfaces functionalized by plasma-enhanced chemical vapor deposition of poly(acrylic acid)- and poly(ethylene oxide)-like films.

    PubMed

    Belegrinou, Serena; Mannelli, Ilaria; Lisboa, Patricia; Bretagnol, Frederic; Valsesia, Andrea; Ceccone, Giacomo; Colpo, Pascal; Rauscher, Hubert; Rossi, François

    2008-07-15

    The interaction of the proteins bovine serum albumin (BSA), lysozyme (Lys), lactoferrin (Lf), and fibronectin (Fn) with surfaces of protein-resistant poly(ethylene oxide) (PEO) and protein-adsorbing poly(acrylic acid) (PAA) fabricated by plasma-enhanced chemical vapor deposition has been studied with quartz crystal microbalance with dissipation monitoring (QCM-D). We focus on several parameters which are crucial for protein adsorption, i.e., the isoelectric point (pI) of the proteins, the pH of the solution, and the charge density of the sorbent surfaces, with the zeta-potential as a measure for the latter. The measurements reveal adsorption stages characterized by different segments in the plots of the dissipation vs frequency change. PEO remains protein-repellent for BSA, Lys, and Lf at pH 4-8.5, while weak adsorption of Fn was observed. On PAA, different stages of protein adsorption processes could be distinguished under most experimental conditions. BSA, Lys, Lf, and Fn generally exhibit a rapid initial adsorption phase on PAA, often followed by slower processes. The evaluation of the adsorption kinetics also reveals different adsorption stages, whereas the number of these stages does not always correspond to the structurally different phases as revealed by the D- f plots. The results presented here, together with information obtained in previous studies by other groups on the properties of these proteins and their interaction with surfaces, allow us to develop an adsorption scenario for each of these proteins, which takes into account electrostatic protein-surface and protein-protein interaction, but also the pH-dependent properties of the proteins, such as shape and exposure of specific domains. PMID:18549295

  20. Microwave spectroscopy of chemical warfare agents: prospects for remote sensing

    NASA Astrophysics Data System (ADS)

    Samuels, Alan C.; Jensen, James O.; Suenram, Richard D.; Hight Walker, Angela R.; Woolard, Dwight L.

    1999-07-01

    The high level of interest in the sensor development community in millimeter wave technology development demonstrates the potential for several multipurpose applications of millimeter wave sensors. The potential for remote sensing of hazardous chemical materials based on their millimeter wave rotational signatures is yet another possible applications, offering certain distinct advantages over FTIR remote sensing. The high specificity of the rotational spectra to the molecular structures affords the capability of detecting chemical warfare (CW) agents and degradation products in complex mixtures including water vapor and smoke, an important consideration in military applications. Furthermore, the rotational modes are not complicated by electronic or vibrational transitions, reducing the potential for false alarms. We have conducted microwave spectroscopic measurements on two CW nerve agents (sarin and soman) and one blister agent (H-mustard). The assignment of the observed band furnishes us with an extremely accurate tool for predicting the rotational spectrum of these agents at any arbitrary frequency. By factoring in the effects of pressure (Lorentzian broadening and intensity reduction), we present the predicted spectral signatures of the CW agents in the 80 - 300 GHz region. This frequency regime is important for atmospheric monitoring as it exploits the wide bandwidth capability of millimeter wave sensors as well as the atmospheric windows that occur in this region.

  1. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ficek, Mateusz; Sankaran, Kamatchi J.; Ryl, Jacek; Bogdanowicz, Robert; Lin, I.-Nan; Haenen, Ken; Darowicki, Kazimierz

    2016-06-01

    The influence of N2 concentration (1%-8%) in CH4/H2/N2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS-NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH4/H2 plasma contained micron-sized diamond grains, the films grown using CH4/H2/(4%)N2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

  2. Parameters affecting the microwave-specific acceleration of a chemical reaction.

    PubMed

    Chen, Po-Kai; Rosana, Michael R; Dudley, Gregory B; Stiegman, A E

    2014-08-15

    Under appropriate conditions, significant microwave-specific enhancement of the reaction rate of an organic chemical reaction can be observed. Specifically, the unimolecular Claisen rearrangement of allyl p-nitrophenyl ether (ApNE) dissolved in naphthalene was studied under microwave heating and conventional convective (thermal) heating. Under constant microwave power, reaching a temperature of 185 °C, a 4-fold rate enhancement was observed in the microwave over that using convective heating; this means that the microwave reaction was proceeding at an effective temperature of 202 °C. Conversely, under constant temperature microwave conditions (200 °C), a negligible (∼1.5-fold) microwave-specific rate enhancement was observed. The largest microwave-specific rate enhancement was observed when a series of 300 W pulses, programmed for 145-175 °C and 85-155 °C cycles, where 2- and 9-fold rate enhancements, over what would be predicted by conventional thermal heating, was observed, respectively. The postulated origins of the microwave-specific effect are purely thermal and arise from selective heating of ApNE, a microwave-absorbing reactant in a nonabsorbing solvent. Under these conditions, excess heat is accumulated in the domains around the ApNE solute so that it experiences a higher effective temperature than the measured temperature of the bulk medium, resulting in an accelerated unimolecular rearrangement. PMID:25050921

  3. A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers

    NASA Technical Reports Server (NTRS)

    Luke, Keung L.; Cheng, Li-Jen

    1988-01-01

    A chemical/microwave technique for the measurement of bulk minority carrier lifetime in silicon wafers is described. This method consists of a wet chemical treatment (surface cleaning, oxidation in solution, and measurement in HF solution) to passivate the silicon surfaces, a laser diode array for carrier excitation, and a microwave bridge measuring system which is more sensitive than the microwave systems used previously for lifetime measurement. Representative experimental data are presented to demonstrate this technique. The result reveals that this method is useful for the determination of bulk lifetime of commercial silicon wafers.

  4. ‘GREENER’ CHEMICAL SYNTHESES USING MICROWAVE IRRADIATION (PRAGUE)

    EPA Science Inventory

    'Greener' solvent-free protocols involve microwave (MW) exposure of neat reactants catalyzed by the surfaces of recyclable mineral supports such as alumina, silica and clay which are applicable to a wide range of cleavage, condensation, cyclization, oxidation and reduction reacti...

  5. 'GREENER' SOLVENT-FREE CHEMICAL SYNTHESIS USING MICROWAVE IRRADIATION

    EPA Science Inventory

    Solvent-free approach that involves microwave (MW) irradiation of neat reactants (undiluted) catalyzed by the surfaces of less-expensive and recyclable mineral supports such as alumina, silica, clay, or 'doped' surfaces is presented which is applicable to a wide range of cleavage...

  6. Chemical activation by mechanochemical mixing, microwave, and ultrasonic irradiation

    EPA Science Inventory

    The use of emerging MW-assisted chemistry techniques in conjunction with benign reaction media is dramatically reducing chemical waste ad reaction times in several organic syntheses and chemical transformations. This editorial comments on the recent developments in mechanochemica...

  7. Organo- and nano-catalyst in greener reaction medium: Microwave-assisted expedient synthesis of fine chemicals

    EPA Science Inventory

    The use of emerging microwave (MW) -assisted chemistry techniques is dramatically reducing chemical waste and reaction times in several organic syntheses and chemical transformations. A brief account of our experiences in developing MW-assisted organic transformations, which invo...

  8. Simulated experiment for elimination of air contaminated with odorous chemical agents by microwave plasma burner

    SciTech Connect

    Hong, Yong Cheol; Shin, Dong Hun; Uhm, Han Sup

    2007-10-15

    An experimental study on elimination of odorous chemical agent was carried out by making use of a microwave plasma burner, which consists of a microwave plasma torch and a reaction chamber with a fuel injector. Injection of hydrocarbon fuels into a high-temperature microwave torch plasma generates a plasma flame. The plasma flame can eliminate the odorous chemical agent diluted in air or purify the interior air of a large volume in isolated spaces. The specially designed reaction chamber eliminated H{sub 2}S and NH{sub 3} diluted in airflow rate of 5000 lpm (liters per minute), showing {beta} values of 46.52 and 39.69 J/l, respectively.

  9. MICROWAVE-INDUCED RAPID CHEMICAL FUNCTIONALIZATION OF SINGLE-WALLED CARBON NANOTUBES (R830901)

    EPA Science Inventory


    Abstract

    The microwave-induced chemical functionalization of single-walled carbon nanotubes (SWNTs) is reported. The major advantage of this high-energy procedure is that it reduced the reaction time to the order of minutes and the number of steps in the reac...

  10. Microwave assisted total synthesis of a benzothiophene-based new chemical entity (NCE)

    EPA Science Inventory

    Pharmaceutical scientists are required to generate diverse arrays of complex targets in short span of time, which can now be achieved by microwave-assisted organic synthesis. New chemical entities (NCE) can be built in a fraction of the time using this technique. However, there a...

  11. Sustainable synthesis of chemical entities by microwave heating with nano-catalysis in water

    EPA Science Inventory

    •Sustainable synthesis of chemical entities by microwave heating with nano-catalysis in water •CRADA’s with the private companies, CEM corporation and VeruTEK Technologies •Green Chemistry principles are accommodated via multi-faceted approach. Learning from nature- using na...

  12. Microwave-assisted chemical process for treatment of hazardous waste: Annual report

    SciTech Connect

    Varma, R.; Nandi, S.P.; Cleaveland, D.C.

    1987-10-01

    Microwave energy provides rapid in situ uniform heating and can be used to initiate chemical processes at moderate temperatures. We investigate the technical feasibility of microwave-assisted chemical processes for detoxification of liquid hazardous waste. Trichloroethylene, a major constituent of waste streams, was selected for this detoxification study. Experiments were performed to investigate the oxidative degradation of trichloroethylene over active carbons (with and without catalysts) in air streams with microwave in situ heating, and to examine the feasibility of regenerating the used carbons. This study established that trichloroethylene in a vapor stream can be adsorbed at room temperature on active carbon beds that are loaded with Cu and Cr catalysts. When the bed is heated by a microwave radiation to moderate temperatures (<400/sup 0/C) while a moist air stream is passed through it, the trichloroethylene is readily converted into less-noxious products such as HCl, CO, CO/sub 2/ and C/sub 2/H/sub 2/Cl/sub 2/. Conversion higher than 80% was observed. Furthermore, the used carbon bed can be conveniently regenerated by microwave heating while a moist-N/sub 2/ or moist-air stream is passed through the bed. 4 refs., 5 figs., 10 tabs.

  13. Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

    SciTech Connect

    Kundhikanjana, W.

    2010-06-02

    Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces.

  14. Rapid, facile microwave-assisted synthesis of xanthan gum grafted polyaniline for chemical sensor.

    PubMed

    Pandey, Sadanand; Ramontja, James

    2016-08-01

    Grafting method, through microwave radiation procedure is extremely productive in terms of time consumption, cost effectiveness and environmental friendliness. In this study, conductive and thermally stable composite (mwXG-g-PANi) was synthesized by grafting of aniline (ANi) on to xanthan gum (XG) using catalytic weight of initiator, ammonium peroxydisulfate in the process of microwave irradiation in an aqueous medium. The synthesis of mwXG-g-PANi were confirm by FTIR, XRD, TGA, and SEM. The influence of altering the microwave power, exposure time of microwave, concentration of monomer and the amount of initiator of graft polymerization were studied over the grafting parameters, for example, grafting percentage (%G) and grafting efficiency (%E). The maximum %G and %E achieved was 172 and 74.13 respectively. The outcome demonstrates that the microwave irradiation strategy can increase the reaction rate by 72 times over the conventional method. Electrical conductivity of XG and mwXG-g-PANi composite film was performed. The fabricated grafted sample film were then examined for the chemical sensor. The mwXG-g-PANi, effectively integrated and handled, are NH3 sensitive and exhibit a rapid sensing in presence of NH3 vapor. Chemiresistive NH3 sensors with superior room temperature sensing performance were produced with sensor response of 905 at 1ppb and 90% recovery within few second. PMID:27118045

  15. Microwave-irradiation-assisted hybrid chemical approach for titanium dioxide nanoparticle synthesis: microbial and cytotoxicological evaluation.

    PubMed

    Ranjan, Shivendu; Dasgupta, Nandita; Rajendran, Bhavapriya; Avadhani, Ganesh S; Ramalingam, Chidambaram; Kumar, Ashutosh

    2016-06-01

    Titanium dioxide nanoparticles (TNPs) are widely used in the pharmaceutical and cosmetics industries. It is used for protection against UV exposure due to its light-scattering properties and high refractive index. Though TNPs are increasingly used, the synthesis of TNPs is tedious and time consuming; therefore, in the present study, microwave-assisted hybrid chemical approach was used for TNP synthesis. In the present study, we demonstrated that TNPs can be synthesized only in 2.5 h; however, the commonly used chemical approach using muffle furnace takes 5 h. The activity of TNP depends on the synthetic protocol; therefore, the present study also determined the effect of microwave-assisted hybrid chemical approach synthetic protocol on microbial and cytotoxicity. The results showed that TNP has the best antibacterial activity in decreasing order from Escherichia coli, Bacillus subtilis, and Staphylococcus aureus. The IC50 values of TNP for HCT116 and A549 were found to be 6.43 and 6.04 ppm, respectively. Cell death was also confirmed from trypan blue exclusion assay and membrane integrity loss was observed. Therefore, the study determines that the microwave-assisted hybrid chemical approach is time-saving; hence, this technique can be upgraded from lab scale to industrial scale via pilot plant scale. Moreover, it is necessary to find the mechanism of action at the molecular level to establish the reason for greater bacterial and cytotoxicological toxicity. Graphical abstract A graphical representation of TNP synthesis. PMID:26976013

  16. Toroidal plasma enhanced CVD of diamond films

    SciTech Connect

    Zvanya, John Cullen, Christopher Morris, Thomas Krchnavek, Robert R.; Holber, William Basnett, Andrew Basnett, Robert; Hettinger, Jeffrey

    2014-09-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp{sup 3} peak has a narrow spectral width (FWHM 12 ± 0.5 cm{sup −1}) and that negligible amounts of the sp{sup 2} band are present, indicating good-quality diamond films.

  17. Microwave spectra of some sulfur and nitrogen compounds. [for chemical analysis

    NASA Technical Reports Server (NTRS)

    White, W. F.

    1974-01-01

    A computer-controlled microwave spectrometer was used to catalog reference spectra for chemical analysis. The apparatus, software, and experimental procedures are described. Tables of absorption frequencies, peak absorption coefficients, and integrated intensities are included for 13 sulfur compounds, 14 nitrogen compounds, and 1 compound containing both sulfur and nitrogen. The frequency range covered was 26,500 to 40,000 MHz for most compounds and 18,000 to 40,000 MHz for some.

  18. Enantiospecific Chemical Mixture Analysis via Microwave Spectroscopy of Buffer Gas Cooled Samples

    NASA Astrophysics Data System (ADS)

    Patterson, David; Schnell, Melanie; Doyle, John

    2013-05-01

    We present experimental results demonstrating a sensitive, highly specific chemical analyzer via Fourier transform microwave (FTMW) spectroscopy of molecular samples cooled via buffer gas cooling to about 7 K. Room temperature spectroscopic methods are routinely used to identify and quantify small and medium sized molecules. These methods fail for larger molecules, which at room temperature occupy hundreds of thousands of ro-vibrational states, leading to broad spectral features composed of a large number of weak, unresolved lines. In contrast, samples cooled to a few degrees K exhibit qualitatively simpler spectra, composed of many fewer and much stronger resolvable, narrow lines. Here we show that a continuous, cold buffer gas cooled source provides an attractive source for a spectroscopy based chemical mixture analyzer. In addition, we will present novel extensions to FTMW which render it sensitive to the chirality of the analyte. In this work, opposite enantiomers are distinguished via a change in the phase of the emitted microwave radiation. This technique provides a robust, general, chirally sensitive chemical analyzer, and is the first demonstration of microwave spectroscopy applied to chiral analysis.

  19. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-01

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit "coral" and "cauliflower-like" morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  20. Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

    SciTech Connect

    Asmussen, J.; Grotjohn, T. A.; Reinhard, D. K.; Schuelke, T.; Becker, M. F.; Yaran, M. K.; King, D. J.; Wicklein, S.

    2008-07-21

    A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of CH{sub 4}/H{sub 2}, microwave input powers of 10-11.5 kW, substrate temperatures of 1100-1200 deg. C, and pressures of 110-135 Torr. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of 14-21 {mu}m/h. Multiple deposition runs totaling 145 h of deposition time added 1.8-2.5 mm of diamond material to each of the 70 seed crystals.

  1. Fourier transform microwave spectroscopy of chemical-warfare agents and their synthetic precursors

    NASA Astrophysics Data System (ADS)

    Hight Walker, Angela R.; Suenram, Richard D.; Samuels, Alan C.; Jensen, James O.; Woolard, Dwight L.; Wiebach, W.

    1999-01-01

    Fourier-transform microwave (FTMW) spectroscopy is an established is an established technique for observing the rotational spectra of molecules and complexes in molecular beams. Scientists at the National Institute of Standards and Technology (NIST) are adapting this measurement technology for applications in analytical chemistry. Presently, FTMW spectroscopy is being used to investigate chemical-warfare agents and their synthetic precursors. A FTMW spectroscopy facility has been established at a surety laboratory at the Edgewood Research, Development, and Engineering Center, where the capabilities exist for handling these deadly warfare agents. Here, the rotational spectra of Sarin, Soman and DF have been observed and assigned. Also, microwave spectroscopic studies of less toxic precursors such as pinacolyl alcohol, isopropyl alcohol, and thiodiglycol have been carried out at NIST. Tests will be undertaken to assess the potential of using FTMW spectroscopy for detecting trace amounts of chemical-warfare agents and precursors in air. A database of rotational transition frequencies is being compiled for use in conjunction with a FTMW spectrometer to unambiguously detect and monitor chemical weapons. The sensitivity and resolution of FTMW spectroscopy of FTMW spectroscopy suggest that the technique may offer real-time, unequivocal identification of chemical-warfare agents at trace vapor concentrations in air.

  2. Structural studies on ethyl isovalerate by microwave spectroscopy and quantum chemical calculations.

    PubMed

    Mouhib, Halima; Jelisavac, Dragan; Sutikdja, Lilian W; Isaak, Elisabeth; Stahl, Wolfgang

    2011-01-20

    We observed the microwave spectrum of ethyl isovalerate by molecular beam Fourier transform microwave spectroscopy. The rotational and centrifugal distortion constants of the most abundant conformer were determined. Its structure was investigated by comparison of the experimental rotational constants with those obtained by ab initio methods. In a first step, the rotational constants of various conformers were calculated at the MP2/6-311++G** level of theory. Surprisingly, no agreement with the experimental results was found. Therefore, we concluded that in the case of ethyl isovalerate more advanced quantum chemical methods are required to obtain a reliable molecular geometry. Ab initio calculations carried out at MP3/6-311++G**, MP4/6-311++G**, and CCSD/6-311++G** levels and also density functional theory calculations using the B3LYP/6-311++G** method gave similar results for the rotational constants, but they were clearly distinct from those obtained at the MP2/6-311++G** level. With use of these more advanced methods, the rotational constants of the lowest energy conformer were in good agreement with those obtained from the microwave spectrum. PMID:21162564

  3. Growth and Characteristics of Freestanding Hemispherical Diamond Films by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Qi-Liang; Lü, Xian-Yi; Li, Liu-An; Cheng, Shao-Heng; Li, Hong-Dong

    2010-04-01

    Freestanding hemispherical diamond films have been fabricated by microwave plasma chemical vapor deposition using graphite and molybdenum (Mo) as substrates. Characterized by Raman spectroscopy and scanning electron microscopy, the crystalline quality of the films deposited on Mo is higher than that on graphite, which is attributed to the difference in intrinsic properties of the two substrates. By decreasing the methane concentration, the diamond films grown on the Mo substrate vary from black to white, and the optical transparency is enhanced. After polishing the growth side, the diamond films show an infrared transmittance of 35-60% in the range 400-4000 cm-1.

  4. Isolation and characterization of cellulose nanofibers from bamboo using microwave liquefaction combined with chemical treatment and ultrasonication.

    PubMed

    Xie, Jiulong; Hse, Chung-Yun; De Hoop, Cornelis F; Hu, Tingxing; Qi, Jinqiu; Shupe, Todd F

    2016-10-20

    Cellulose nanofibers were successfully isolated from bamboo using microwave liquefaction combined with chemical treatment and ultrasonic nanofibrillation processes. The microwave liquefaction could eliminate almost all the lignin in bamboo, resulting in high cellulose content residues within 7min, and the cellulose enriched residues could be readily purified by subsequent chemical treatments with lower chemical charging and quickly. The results of wet chemistry analyses, SEM images, and FTIR and X-ray spectra indicated the combination of microwave liquefaction and chemical treatment was significantly efficient in removing non-cellulosic compounds. Ultrasonication was used to separate the nanofibrils from the purified residues to extract nanofibers. The TEM images confirmed the presence of elementary fibrils, nano-sized fibril bundles, and aggregated fibril bundles. As evidenced by the TGA analysis, cellulose nanofibers isolated by this novel technique had high thermal stability indicating that the isolated nanofibers could possibly be applied as reinforcing elements in biomaterials. PMID:27474619

  5. Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

    NASA Technical Reports Server (NTRS)

    Johnson, C. C.; Wydeven, T.; Donohoe, K.

    1983-01-01

    Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

  6. Plasma enhanced atomic layer deposition of ultrathin oxides on graphene

    NASA Astrophysics Data System (ADS)

    Trimble, Christie J.; Zaniewski, Anna M.; Kaur, Manpuneet; Nemanich, Robert J.

    2015-03-01

    Graphene, a single atomic layer of sp2 bonded carbon atoms, possesses extreme material properties that point toward a plethora of potential electronic applications. Many of these possibilities require the combination of graphene with dielectric materials such as metal oxides. Simultaneously, there is interest in new physical properties that emerge when traditionally three dimensional materials are constrained to ultrathin layers. For both of these objectives, we explore deposition of ultrathin oxide layers on graphene. In this project, we perform plasma enhanced atomic layer deposition (PEALD) of aluminum oxide on graphene that has been grown by chemical vapor deposition atop copper foil and achieve oxide layers that are <1.5 nm. Because exposure to oxygen plasma can cause the graphene to deteriorate, we explore techniques to mitigate this effect and optimize the PEALD process. Following deposition, the graphene and oxide films are transferred to arbitrary substrates for further analysis. We use x-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy to assess the quality of the resulting films. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  7. Synthesis of graphene by cobalt-catalyzed decomposition of methane in plasma-enhanced CVD: Optimization of experimental parameters with Taguchi method

    NASA Astrophysics Data System (ADS)

    Mehedi, H.-A.; Baudrillart, B.; Alloyeau, D.; Mouhoub, O.; Ricolleau, C.; Pham, V. D.; Chacon, C.; Gicquel, A.; Lagoute, J.; Farhat, S.

    2016-08-01

    This article describes the significant roles of process parameters in the deposition of graphene films via cobalt-catalyzed decomposition of methane diluted in hydrogen using plasma-enhanced chemical vapor deposition (PECVD). The influence of growth temperature (700-850 °C), molar concentration of methane (2%-20%), growth time (30-90 s), and microwave power (300-400 W) on graphene thickness and defect density is investigated using Taguchi method which enables reaching the optimal parameter settings by performing reduced number of experiments. Growth temperature is found to be the most influential parameter in minimizing the number of graphene layers, whereas microwave power has the second largest effect on crystalline quality and minor role on thickness of graphene films. The structural properties of PECVD graphene obtained with optimized synthesis conditions are investigated with Raman spectroscopy and corroborated with atomic-scale characterization performed by high-resolution transmission electron microscopy and scanning tunneling microscopy, which reveals formation of continuous film consisting of 2-7 high quality graphene layers.

  8. Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Myers, J.; Mou, S.; Chen, K.-H.; Zhuang, Y.

    2016-02-01

    Characterization of micro-patterned chemical vapor deposited monolayer graphene using a scanning microwave microscope has been presented. Monolayer graphene sheets deposited on a copper substrate were transferred to a variety of substrates and micro-patterned into a periodic array of parallel lines. The measured complex reflection coefficients exhibit a strong dependency on the operating frequency and on the samples' electrical conductivity and permittivity. The experiments show an extremely high sensitivity by detecting image contrast between single and double layer graphene sheets. Correlating the images recorded at the half- and quarter-wavelength resonant frequencies shows that the relative permittivity of the single layer graphene sheet is above 105. The results are in good agreement with the three dimensional numerical electromagnetic simulations. This method may be instrumental for a comprehensive understanding of the scanning microwave microscope image contrast and provide a unique technique to estimate the local electrical properties with nano-meter scale spatial resolution of two dimensional materials at radio frequency.

  9. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    SciTech Connect

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  10. Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

    NASA Astrophysics Data System (ADS)

    Shivkumar, G.; Tholeti, S. S.; Alrefae, M. A.; Fisher, T. S.; Alexeenko, A. A.

    2016-03-01

    The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the heat transfer solver in COMSOL Multiphysics. The system is modeled to study variation in parameters with reactor geometry, microwave power, and gas pressure. The results are compared with experimental measurements from the Q-branch of the H2 Fulcher band of hydrogen using an optical emission spectroscopy technique. The parameter γ in Füner's model is calibrated to match experimental observations at a power of 500 W and 30 Torr. Good agreement is found between the modeling and experimental results for a wide range of powers and pressures. The gas temperature exhibits a weak dependence on power and a strong dependence on gas pressure. The inclusion of a vertical dielectric pillar that concentrates the plasma increases the maximum electron temperature by 70%, the maximum gas temperature by 50%, and the maximum electron number density by 70% when compared to conditions without the pillar at 500 W and 30 Torr. Experimental observations also indicate intensified plasma with the inclusion of a pillar.

  11. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition.

    PubMed

    Kim, Y; Song, W; Lee, S Y; Jeon, C; Jung, W; Kim, M; Park, C-Y

    2011-06-27

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω∕sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film. PMID:21799537

  12. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-06-01

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  13. Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

    SciTech Connect

    Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y.

    2011-06-27

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 deg. C down to 450 deg. C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 {Omega}/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

  14. Electrical characterization of graphene films synthesized by low-temperature microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Okigawa, Yuki; Tsugawa, Kazuo; Yamada, Takatoshi; Ishihara, Masatou; Hasegawa, Masataka

    2013-10-01

    In this Letter, we discuss the results of Hall effect measurements to examine the electrical properties of the graphene films synthesized by low-temperature microwave plasma chemical vapor deposition. Van der Pauw devices with sizes of 50-100 μm were fabricated, for which we observed p-type conduction and mobility from 10 to 100 cm2/V s. To investigate the mobility dispersion, we performed Raman mapping to quantify the number of defects and the disorder in graphene films. The results suggest that the D-band/G-band intensity ratio is correlated with the mobility. Moreover, we discuss the factors controlling the mobility and how to improve the quality of the graphene films by reducing the number of defects.

  15. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  16. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  17. Role of the conducting layer substrate on TiO2 nucleation when using microwave activated chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Zumeta, I.; Espinosa, R.; Ayllón, J. A.; Vigil, E.

    2002-12-01

    Nanostructured TiO2 is used in novel dye sensitized solar cells. Because of their interaction with light, thin TiO2 films are also used as coatings for self-cleaning glasses and tiles. Microwave activated chemical bath deposition represents a simple and cost-effective way to obtain nanostructured TiO2 films. It is important to study, in this technique, the role of the conducting layer used as the substrate. The influence of microwave-substrate interactions on TiO2 deposition is analysed using different substrate positions, employing substrates with different conductivities, and also using different microwave radiation powers for film deposition. We prove that a common domestic microwave oven with a large cavity and inhomogeneous radiation field can be used with equally satisfactory results. The transmittance spectra of the obtained films were studied and used to analyse film thickness and to obtain gap energy values. The results, regarding different indium-tin oxide resistivities and different substrate positions in the oven cavity, show that the interaction of the microwave field with the conducting layer is determinant in layer deposition. It has also been found that film thickness increases with the power of the applied radiation while the gap energies of the TiO2 films decrease approaching the 3.2 eV value reported for bulk anatase. This indicates that these films are not crystalline and it agrees with x-ray spectra that do not reveal any peak.

  18. Physical and Chemical Properties of Bio-Oils From Microwave Pyrolysis of Corn Stover

    NASA Astrophysics Data System (ADS)

    Yu, Fei; Deng, Shaobo; Chen, Paul; Liu, Yuhuan; Wan, Yiqin; Olson, Andrew; Kittelson, David; Ruan, Roger

    This study was aimed to understand the physical and chemical properties of pyrolytic bio-oils produced from microwave pyrolysis of corn stover regarding their potential use as gas turbine and home heating fuels. The ash content, solids content, pH, heating value, minerals, elemental ratio, moisture content, and viscosity of the bio-oils were determined. The water content was approx 15.2 wt%, solids content 0.22 wt%, alkali metal content 12 parts per million, dynamic viscosity 185 mPa·s at 40°C, and gross high heating value 17.5 MJ/kg for a typical bio-oil produced. Our aging tests showed that the viscosity and water content increased and phase separation occurred during the storage at different temperatures. Adding methanol and/or ethanol to the bio-oils reduced the viscosity and slowed down the increase in viscosity and water content during the storage. Blending of methanol or ethanol with the bio-oils may be a simple and cost-effective approach to making the pyrolytic bio-oils into a stable gas turbine or home heating fuels.

  19. Physical and chemical properties of bio-oils from microwave pyrolysis of corn stover.

    PubMed

    Yu, Fei; Deng, Shaobo; Chen, Paul; Liu, Yuhuan; Wan, Yiqin; Olson, Andrew; Kittelson, David; Ruan, Roger

    2007-04-01

    This study was aimed to understand the physical and chemical properties of pyrolytic bio-oils produced from microwave pyrolysis of corn stover regarding their potential use as gas turbine and home heating fuels. The ash content, solids content, pH, heating value, minerals, elemental ratio, moisture content, and viscosity of the bio-oils were determined. The water content was approx 15.2 wt%, solids content 0.22 wt%, alkali metal content 12 parts per million, dynamic viscosity 185 mPa.s at 40 degrees C, and gross high heating value 17.5 MJ/kg for a typical bio-oil produced. Our aging tests showed that the viscosity and water content increased and phase separation occurred during the storage at different temperatures. Adding methanol and/or ethanol to the bio-oils reduced the viscosity and slowed down the increase in viscosity and water content during the storage. Blending of methanol or ethanol with the bio-oils may be a simple and cost-effective approach to making the pyrolytic bio-oils into a stable gas turbine or home heating fuels. PMID:18478448

  20. Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lai, Wen Chi; Wu, Yu-Shiang; Chang, Hou-Cheng; Lee, Yuan-Haun

    2010-12-01

    This study investigates the orientation of textured diamond films produced through microwave plasma chemical vapor deposition (MPCVD) at 1200 W, 110 Torr, CH 4/H 2 = 1/20, with depositions times of 0.5-4.0 h. After a growth period of 2.0-4.0 h, this particular morphology revealed a rectangular structure stacked regularly on the diamond film. The orientation on {1 1 1}-textured diamond films grew a preferred orientation of {1 1 0} on the surface, as measured by XRD. The formation of the diamond epitaxial film formed textured octahedrons in ball shaped (or cauliflower-like) diamonds in the early stages (0.5 h), and the surface of the diamond film extended to pile the rectangular structure at 4.0 h. The width of the tier was approximately 200 nm at the 3.0 h point of deposition, according to TEM images. The results revealed that the textured diamond films showed two different morphological structures (typical ball shaped and rectangular diamonds), at different stages of the deposition period. The I- V characteristics of the oriented diamond films after 4.0 h of deposition time showed good conformity with the ohmic contact.

  1. [Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films].

    PubMed

    Cao, Wei; Ma, Zhi-bin

    2015-11-01

    Polycrystalline diamond growth by microwave plasma chemical vapor deposition (MPCVD) at high-pressure (34.5 kPa) was investigated. The CH₄/H₂/O₂plasma was detected online by optical emission spectroscopy (OES), and the spatial distribution of radicals in the CH₄/H₂/O₂plasma was studied. Raman spectroscopy was employed to analyze the properties of the diamond films deposited in different oxygen volume fraction. The uniformity of diamond films quality was researched. The results indicate that the spectrum intensities of C₂, CH and Hα decrease with the oxygen volume fraction increasing. While the intensity ratios of C₂, CH to Hα also reduced as a function of increasing oxygen volume fraction. It is shown that the decrease of the absolute concentration of carbon radicals is attributed to the rise volume fraction of oxygen, while the relative concentration of carbon radicals to hydrogen atom is also reducing, which depressing the growth rate but improving the quality of diamond film. Furthermore, the OH radicals, role of etching, its intensities increase with the increase of oxygen volume fraction. Indicated that the improvement of OH concentration is also beneficial to reduce the content of amorphous carbon in diamond films. The spectrum space diagnosis results show that under high deposition pressure the distribution of the radicals in the CH₄/H₂/O₂plasma is inhomogeneous, especially, that of radical C₂ gathered in the central region. And causing a rapid increase of non-diamond components in the central area, eventually enable the uneven distribution of diamond films quality. PMID:26978897

  2. Synthesis and characterization of nano ZnO rods via microwave assisted chemical precipitation method

    SciTech Connect

    Uma Sangari, N.; Chitra Devi, S.

    2013-01-15

    A microwave assisted chemical precipitation method has been employed for the synthesis of nano zinc oxide rods by reacting zinc nitrate and potassium hydroxide. The amount of potassium hydroxide was adjusted for three different pHs to achieve ZnO nano rods with varying aspect ratio. The mechanism of growth of nano rods is explained briefly. The average crystallite size of the as synthesized samples was analyzed by means of powder XRD pattern and estimated to vary from 25.6 nm to 43.1 nm. The existence of rods was confirmed using scanning electron microscopy (SEM). The samples were also analyzed using FT-IR. The optical properties of the samples were also studied by means of UV-visible spectra and Room Temperature Photo Luminescence studies. The band gap of the samples was determined from the DRS spectrum. A strong near band emission peaks due to surface defects are observed in the PL spectrum. - Graphical abstract: At the solution pH of 11 and 9, tetrapod-like and flower-like ZnO nano rods were formed along with separated rods respectively due to the formation of activated nuclei of different sizes. Highlights: Black-Right-Pointing-Pointer Increase in alkalinity of the precursor solution results in longer rods. Black-Right-Pointing-Pointer Beyond a saturation limit, the excess of added OH{sup -} ions inhibited the growth of rods. Black-Right-Pointing-Pointer Keeping all parameters the same, the alkalinity can only modify the aspect ratio of the rods and not their morphology.

  3. Evidence for the occurrence of subcutaneous oxidation during low temperature remote plasma enhanced deposition of silicon dioxide films

    NASA Astrophysics Data System (ADS)

    Fountain, G. G.; Hattangady, S. V.; Rudder, R. A.; Markunas, R. J.; Lucovsky, G.

    1989-06-01

    The paper presents evidence which indicates that a subcutaneous oxidation process takes place during remote plasma enhanced chemical vapor deposition of SiO2, which oxidizes a few monolayers of the underlying substrate. Electrical measurements on metal-insulator semiconductor (MIS) structures fabricated on Ge and GaAs materials are presented. It is found that the performance of Si metal-oxide semiconductor structures fabricated using deposited oxides degrades as the thickness of the oxide is increased.

  4. Sintering Behavior of Metal Powders Involving Microwave-Enhanced Chemical Reaction

    NASA Astrophysics Data System (ADS)

    Takayama, Sadatsugu; Saito, Yasushi; Sato, Motoyasu; Nagasaka, Takuya; Muroga, Takeo; Ninomiya, Yoshihiko

    2006-03-01

    Copper powder compacts were sintered by microwave radiation in air. In this procedure, the samples were sintered by microwave in air without using any special atmosphere, only by protecting them in a container filled with ceramic powder. The enhancement of the deoxidation reaction by the microwave was observed. The samples were analyzed by using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) analysis. The samples were deoxidized on the surface and were well sintered to the edge from the inside throughout the entire cross section. The tensile strength of the copper samples sintered by the microwave in air was higher than that found in conventional sintering in N2 gas. No other differences were noticed between the samples sintered by the microwave under the air-rich conditions and in the conventional furnace in H2+N2 gas. The microwave-sintered copper samples were of good quality; for example, the tensile strength measured throughout the cross section was the same as that for the samples sintered in H2+N2 gas by the conventional method.

  5. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions

    NASA Astrophysics Data System (ADS)

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-04-01

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea’) decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea’ under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea’ was determined. MW irradiation energy was partially transformed to reduce the Ea’, and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology.

  6. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions.

    PubMed

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-01-01

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea') decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea' under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea' was determined. MW irradiation energy was partially transformed to reduce the Ea', and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology. PMID:27118640

  7. A new type of power energy for accelerating chemical reactions: the nature of a microwave-driving force for accelerating chemical reactions

    PubMed Central

    Zhou, Jicheng; Xu, Wentao; You, Zhimin; Wang, Zhe; Luo, Yushang; Gao, Lingfei; Yin, Cheng; Peng, Renjie; Lan, Lixin

    2016-01-01

    The use of microwave (MW) irradiation to increase the rate of chemical reactions has attracted much attention recently in nearly all fields of chemistry due to substantial enhancements in reaction rates. However, the intrinsic nature of the effects of MW irradiation on chemical reactions remains unclear. Herein, the highly effective conversion of NO and decomposition of H2S via MW catalysis were investigated. The temperature was decreased by several hundred degrees centigrade. Moreover, the apparent activation energy (Ea’) decreased substantially under MW irradiation. Importantly, for the first time, a model of the interactions between microwave electromagnetic waves and molecules is proposed to elucidate the intrinsic reason for the reduction in the Ea’ under MW irradiation, and a formula for the quantitative estimation of the decrease in the Ea’ was determined. MW irradiation energy was partially transformed to reduce the Ea’, and MW irradiation is a new type of power energy for speeding up chemical reactions. The effect of MW irradiation on chemical reactions was determined. Our findings challenge both the classical view of MW irradiation as only a heating method and the controversial MW non-thermal effect and open a promising avenue for the development of novel MW catalytic reaction technology. PMID:27118640

  8. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  9. Terpenes in the gas phase: The structural conformation of S-(-)-perillaldehyde investigated by microwave spectroscopy and quantum chemical calculations

    NASA Astrophysics Data System (ADS)

    Avilés Moreno, Juan Ramón; Partal Ureña, Francisco; López González, Juan Jesús; Huet, Thérèse R.

    2009-04-01

    S-(-)-perillaldehyde (C 10H 14O) has been characterized in the gas phase using a Fourier transform microwave spectroscopy experiment in a supersonic molecular beam. Two conformers - with the isopropenyl group in the equatorial position - have been detected and described by a set of molecular parameters including the principal rotational constants and the quartic centrifugal distortion parameters. Quantum chemical calculations indicate that a third conformer might not be observed due to relaxation processes in the jet. The gas phase results are compared with the liquid phase IR-Raman-VCD spectra. Our study shows that gas phase spectroscopy is a powerful tool for characterizing monoterpenes.

  10. "GREENER" CHEMICAL SYNTHETIC PROCESSES USING ENZYMATIC, MECHANOCHEMICAL MIXING, OR MICROWAVE AND ULTRASOUND IRRADIATION

    EPA Science Inventory

    Several newer strategies, such as solvent-free (dry media), solid-supported with and without microwave (MW) irradiation, and mechanochemical mixing (grinding); and the use of room temperature ionic liquids, supercritical carbon dioxide, and water as reaction media that can be com...

  11. ‘Greener’ Chemical Syntheses Using Mechanochemical Mixing or Microwave and Ultrasound Irradiation

    EPA Science Inventory

    Various emerging ‘greener’ strategic pathways researched primarily in the author’s own laboratory are summarized. They include solvent-free mechanochemical methods and microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of less-expensive and recyclabl...

  12. 'GREENER' CHEMICAL SYNTHESES USING MICROWAVES UNDER SOLVENT-FREE CONDITIONS OR AQUEOUS MEDIA

    EPA Science Inventory

    A solvent-free approach that involves microwave (MW) exposure of neat reactants (undiluted) catalyzed by the surfaces of recyclable mineral supports such as alumina, silica, clay, or 'doped' surfaces is presented which is applicable to a wide range of cleavage, condensation, cycl...

  13. Extraction and separation of nickel and cobalt from saprolite laterite ore by microwave-assisted hydrothermal leaching and chemical deposition

    NASA Astrophysics Data System (ADS)

    Zhao, Yan; Gao, Jian-ming; Yue, Yi; Peng, Ben; Que, Zai-qing; Guo, Min; Zhang, Mei

    2013-07-01

    Extraction and separation of nickel and cobalt from saprolite laterite ore were studied by using a method of microwave-assisted hydrothermal leaching and chemical deposition. The effects of leaching temperature and time on the extraction efficiencies of Ni2+ and Co2+ were investigated in detail under microwave conditions. It is shown that the extraction efficiencies of Ni2+ and Co2+ from the ore pre-roasted at 300°C for 5 h were 89.19% and 61.89% when the leaching temperature and time were about 70°C and 60 min, respectively. For the separation process of Ni and Co, the separation of main chemical components was performed by adjusting the pH values of sulfuric leaching solutions using a NaOH solution based on the different pH values of precipitation for metal hydroxides. The final separation efficiencies of Ni and Co were 77.29% and 65.87%, respectively. Furthermore, the separation efficiencies of Fe of 95.36% and Mg of 92.2% were also achieved at the same time.

  14. Fabrication and morphology control of BaWO{sub 4} thin films by microwave assisted chemical bath deposition

    SciTech Connect

    Wang Rui; Liu Chen; Zeng Jia; Li KunWei; Wang Hao

    2009-04-15

    Highly crystallized barium tungstate (BaWO{sub 4}) thin films with dumbbell-like, kernel-like, bowknot-like and cauliflower-like microstructure were synthesized from an aqueous solution containing barium nitrate, ethylenediamine tetraacetate acid disodium and sodium tungstate, via mild microwave assisted chemical bath deposition process. The resulting BaWO{sub 4} films with different morphologies were characterized by X-ray diffraction spectrum, scanning electron microscope, Raman and photoluminescence spectra. The results indicate that the morphologies of final products significantly depend on the reaction conditions including the reaction time, the initial concentration of precursor reagent and the physicochemical characteristics of the substrates. Furthermore, the oriented aggregation mechanism is proposed as a possible formation mechanism of the films with specific morphologies. - Graphical abstract: Highly crystallized BaWO{sub 4} thin films with controllable morphologies have been synthesized via mild microwave assisted chemical bath deposition. The oriented aggregation mechanism has been proposed as the possible formation mechanism of specific films.

  15. Iron silicide root formation in carbon nanotubes grown by microwave PECVD.

    PubMed

    AuBuchon, Joseph F; Daraio, Chiara; Chen, Li-Han; Gapin, Andrew I; Jin, Sungho

    2005-12-29

    Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications. PMID:16375415

  16. Synthesis of nanostructured and microstructured ZnO and Zn(OH)2 on activated carbon cloth by hydrothermal and microwave-assisted chemical bath deposition methods

    NASA Astrophysics Data System (ADS)

    Mosayebi, Elham; Azizian, Saeid; Hajian, Ali

    2015-05-01

    Nanostructured and microstructured ZnO and Zn(OH)2 loaded on activated carbon cloth were synthesized by microwave-assisted chemical bath deposition and hydrothermal methods. By hydrothermal method the deposited sample on carbon fiber is pure ZnO with dandelion-like nanostructures. By microwave-assisted chemical bath method the structure and composition of deposited sample depends on solution pH. At pH = 9.8 the deposited sample on carbon fiber is pure ZnO with flower-like microstructure; but at pH = 10.8 the sample is a mixture of ZnO and Zn(OH)2 with flower-like and rhombic microstructures, respectively. The mechanism of crystal grow by microwave-assisted chemical bath method was investigated by SEM method at both pH.

  17. Automated microwave double resonance spectroscopy: A tool to identify and characterize chemical compounds

    NASA Astrophysics Data System (ADS)

    Martin-Drumel, Marie-Aline; McCarthy, Michael C.; Patterson, David; McGuire, Brett A.; Crabtree, Kyle N.

    2016-03-01

    Owing to its unparalleled structural specificity, rotational spectroscopy is a powerful technique to unambiguously identify and characterize volatile, polar molecules. We present here a new experimental approach, automated microwave double resonance (AMDOR) spectroscopy, to rapidly determine the rotational constants of these compounds without a priori knowledge of elemental composition or molecular structure. This task is achieved by rapidly acquiring the classical (frequency vs. intensity) broadband spectrum of a molecule using chirped-pulse Fourier transform microwave (FTMW) spectroscopy and subsequently analyzing it in near real-time using complementary cavity FTMW detection and double resonance. AMDOR measurements provide a unique "barcode" for each compound from which rotational constants can be extracted. To illustrate the power of this approach, AMDOR spectra of three aroma compounds — trans-cinnamaldehyde, α-, and β-ionone — have been recorded and analyzed. The prospects to extend this approach to mixture characterization and purity assessment are described.

  18. Automated microwave double resonance spectroscopy: A tool to identify and characterize chemical compounds.

    PubMed

    Martin-Drumel, Marie-Aline; McCarthy, Michael C; Patterson, David; McGuire, Brett A; Crabtree, Kyle N

    2016-03-28

    Owing to its unparalleled structural specificity, rotational spectroscopy is a powerful technique to unambiguously identify and characterize volatile, polar molecules. We present here a new experimental approach, automated microwave double resonance (AMDOR) spectroscopy, to rapidly determine the rotational constants of these compounds without a priori knowledge of elemental composition or molecular structure. This task is achieved by rapidly acquiring the classical (frequency vs. intensity) broadband spectrum of a molecule using chirped-pulse Fourier transform microwave (FTMW) spectroscopy and subsequently analyzing it in near real-time using complementary cavity FTMW detection and double resonance. AMDOR measurements provide a unique "barcode" for each compound from which rotational constants can be extracted. To illustrate the power of this approach, AMDOR spectra of three aroma compounds - trans-cinnamaldehyde, α-, and β-ionone - have been recorded and analyzed. The prospects to extend this approach to mixture characterization and purity assessment are described. PMID:27036441

  19. Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Triplett, G. E., Jr.; Durbin, S. M.

    2004-01-01

    The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

  20. Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor

    PubMed Central

    2014-01-01

    A widely used application of the atomic layer deposition (ALD) and chemical vapour deposition (CVD) methods is the preparation of permeation barrier layers against water vapour. Especially in the field of organic electronics, these films are highly demanded as such devices are very sensitive to moisture and oxygen. In this work, multilayers of aluminium oxide (AlO x ) and plasma polymer (PP) were coated on polyethylene naphthalate substrates by plasma-enhanced ALD and plasma-enhanced CVD at 80℃ in the same reactor, respectively. As precursor, trimethylaluminium was used together with oxygen radicals in order to prepare AlO x , and benzene served as precursor to deposit the PP. This hybrid structure allows the decoupling of defects between the single AlO x layers and extends the permeation path for water molecules towards the entire barrier film. Furthermore, the combination of two plasma techniques in a single reactor system enables short process times without vacuum breaks. Single aluminium oxide films by plasma-enhanced ALD were compared to thermally grown layers and showed a significantly better barrier performance. The water vapour transmission rate (WVTR) was determined by means of electrical calcium tests. For a multilayer with 3.5 dyads of 25-nm AlO x and 125-nm PP, a WVTR of 1.2 × 10 −3 gm−2d−1 at 60℃ and 90% relative humidity could be observed. PMID:24936155

  1. Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor

    NASA Astrophysics Data System (ADS)

    Bülow, Tim; Gargouri, Hassan; Siebert, Mirko; Rudolph, Rolf; Johannes, Hans-Hermann; Kowalsky, Wolfgang

    2014-05-01

    A widely used application of the atomic layer deposition (ALD) and chemical vapour deposition (CVD) methods is the preparation of permeation barrier layers against water vapour. Especially in the field of organic electronics, these films are highly demanded as such devices are very sensitive to moisture and oxygen. In this work, multilayers of aluminium oxide (AlO x ) and plasma polymer (PP) were coated on polyethylene naphthalate substrates by plasma-enhanced ALD and plasma-enhanced CVD at 80℃ in the same reactor, respectively. As precursor, trimethylaluminium was used together with oxygen radicals in order to prepare AlO x , and benzene served as precursor to deposit the PP. This hybrid structure allows the decoupling of defects between the single AlO x layers and extends the permeation path for water molecules towards the entire barrier film. Furthermore, the combination of two plasma techniques in a single reactor system enables short process times without vacuum breaks. Single aluminium oxide films by plasma-enhanced ALD were compared to thermally grown layers and showed a significantly better barrier performance. The water vapour transmission rate (WVTR) was determined by means of electrical calcium tests. For a multilayer with 3.5 dyads of 25-nm AlO x and 125-nm PP, a WVTR of 1.2 × 10 -3 g m -2 d -1 at 60℃ and 90% relative humidity could be observed.

  2. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    NASA Technical Reports Server (NTRS)

    Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  3. Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

    NASA Technical Reports Server (NTRS)

    Cassell, Alan M.; Meyyappan, M.

    2004-01-01

    The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical bio-sensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

  4. Conformational analysis of tert-butyl acetate using a combination of microwave spectroscopy and quantum chemical calculations

    NASA Astrophysics Data System (ADS)

    Zhao, Yueyue; Mouhib, Halima; Li, Guohua; Kleiner, Isabelle; Stahl, Wolfgang

    2016-04-01

    tert-Butyl acetate was investigated using a combination of quantum chemical calculations and molecular beam Fourier transform microwave spectroscopy. The microwave spectrum was recorded in the frequency range from 8.00 to 15.75 GHz. Due to its rather rigid frame, the molecule possesses only two conformers: one of Cs symmetry and one of C1 symmetry that appears as a pair of enantiomers. The Cs conformer is the most abundant in the supersonic jet and according to ab initio calculations at the MP2/6-311++G(d, p) level of theory it is 46 kJ/mol lower in energy than the C1 conformer. Here, we report on the structure and dynamics of the most abundant conformer of tert-butyl acetate, for which a set of rotational and centrifugal distortion constants, as well as the barrier to internal rotation of the acetyl methyl group were determined with high accuracy. Splittings due to the internal rotation of the methyl group of up to 1.3 GHz were observed in the spectrum. Using the programs XIAM and BELGI-Cs, we were able to determine a barrier height of about 113 cm-1 and subsequently compare the molecular parameters obtained from these two codes.

  5. Microwave-assisted chemical oxidation of biological waste sludge: simultaneous micropollutant degradation and sludge solubilization.

    PubMed

    Bilgin Oncu, Nalan; Akmehmet Balcioglu, Isil

    2013-10-01

    Microwave-assisted hydrogen peroxide (MW/H2O2) treatment and microwave-assisted persulfate (MW/S2O8(2-)) treatment of biological waste sludge were compared in terms of simultaneous antibiotic degradation and sludge solubilization. A 2(3) full factorial design was utilized to evaluate the influences of temperature, oxidant dose, and holding time on the efficiency of these processes. Although both MW/H2O2 and MW/S2O8(2-) yielded ≥97% antibiotic degradation with 1.2g H2O2 and 0.87 g S2O8(2-) per gram total solids, respectively, at 160 °C in 15 min, MW/S2O8(2-) was found to be more promising for efficient sludge treatment at a lower temperature and a lower oxidant dosage, as it allows more effective activation of persulfate to produce the SO4(-) radical. Relative to MW/H2O2, MW/S2O8(2-) gives 48% more overall metal solubilization, twofold higher improvement in dewaterability, and the oxidation of solubilized ammonia to nitrate in a shorter treatment period. PMID:23928124

  6. Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures

    SciTech Connect

    Liang Qi; Chin Chengyi; Lai, Joseph; Yan Chihshiue; Meng Yufei; Mao Hokwang; Hemley, Russell J.

    2009-01-12

    Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 {mu}m/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.

  7. Fabrication and morphology control of BaWO 4 thin films by microwave assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Wang, Rui; Liu, Chen; Zeng, Jia; Li, KunWei; Wang, Hao

    2009-04-01

    Highly crystallized barium tungstate (BaWO 4) thin films with dumbbell-like, kernel-like, bowknot-like and cauliflower-like microstructure were synthesized from an aqueous solution containing barium nitrate, ethylenediamine tetraacetate acid disodium and sodium tungstate, via mild microwave assisted chemical bath deposition process. The resulting BaWO 4 films with different morphologies were characterized by X-ray diffraction spectrum, scanning electron microscope, Raman and photoluminescence spectra. The results indicate that the morphologies of final products significantly depend on the reaction conditions including the reaction time, the initial concentration of precursor reagent and the physicochemical characteristics of the substrates. Furthermore, the oriented aggregation mechanism is proposed as a possible formation mechanism of the films with specific morphologies.

  8. Microwave-Assisted Extraction, Chemical Structures, and Chain Conformation of Polysaccharides from a Novel Cordyceps Sinensis Fungus UM01.

    PubMed

    Cheong, Kit-Leong; Wang, Lan-Ying; Wu, Ding-Tao; Hu, De-Jun; Zhao, Jing; Li, Shao-Ping

    2016-09-01

    Cordyceps sinensis is a well-known tonic food with broad medicinal properties. The aim of the present study was to investigate the optimization of microwave-assisted extraction (MAE) and characterize chemical structures and chain conformation of polysaccharides from a novel C. sinensis fungus UM01. Ion-exchange and gel filtration chromatography were used to purify the polysaccharides. The chemical structure of purified polysaccharide was determined through gas chromatography-mass spectrometry. Moreover, high performance size exclusion chromatography combined with refractive index detector and multiangle laser light scattering were conducted to analyze the molecular weight (Mw ) and chain conformation of purified polysaccharide. Based on the orthogonal design L9 , optimal MAE conditions could be obtained through 1300 W of microwave power, with a 5-min irradiation time at a solid to water ratio of 1:60, generating the highest extraction yield of 6.20%. Subsequently, the polysaccharide UM01-S1 was purified. The UM01-S1 is a glucan-type polysaccharide with a (1→4)-β-d-glucosyl backbone and branching points located at O-3 of Glcp with a terminal-d-Glcp. The Mw , radius of gyration (Rg ) and hydrodynamic radius (Rh ) of UM01-S1 were determined as 5.442 × 10(6)  Da, 21.8 and 20.2 nm, respectively. Using the polymer solution theory, the exponent (ν) value of the power law function was calculated as 0.38, and the shape factor (ρ = Rg /Rh ) was 1.079, indicating that UM01-S1 has a sphere-like conformation with a branched structure in an aqueous solution. These results provide fundamental information for the future application of polysaccharides from cultured C. sinensis in health and functional food area. PMID:27514485

  9. CHEMICAL TRANSFORMATIONS USING NON-TRADITIONAL APPROACHES: MICROWAVE-ASSISTED GREENER SYNTHESES IN AQUEOUS MEDIA OR UNDER SOLVENT-FREE CONDITIONS

    EPA Science Inventory

    Microwave (MW) irradiation in conjunction with water as reaction media has proven to be a 'greener' chemical approach for expeditious N-alkylation reactions of amines and hydrazines wherein the reactions under mildly basic conditions afford tertiary amines and double N<...

  10. Properties of linear microwave plasma sustained by coaxial TEM waveguide

    NASA Astrophysics Data System (ADS)

    Han, Moon-Ki; Seo, Kwon-Sang; Kim, Dong Hyun; Lee, Hae June; Lee, Ho-Jun

    2013-09-01

    A linear 2.45GHz microwave plasma sustained by coaxial circular TEM waveguide has been developed for the low temperature large area plasma enhanced chemical vapor deposition application. TE-TEM microwave power coupling was achieved by copper rod located at λg/4 from short-end of TE10 waveguide. TEM waveguide consists of quartz tube surrounded by plasma and copper rod electrode. TEM waveguide is 60 cm in length and 3 cm in diameter, which is terminated with shorted metal cap. For the operation condition of 300 W input power and Ar pressure of 200 mTorr, a clear standing wave pattern with wavelength of 10 cm was observed. Measured plasma density and temperature at 5 cm from quartz wall was 1.2 × 1017/cm3 and 1.7 eV respectively. Density non-uniformity was less than 6% along quartz tube in spite of standing wave set-up. In addition, properties of the microwave source are also investigated through electromagnetic field simulation coupled with drift-diffusion approximation of plasma. Calculated and measured standing wave pattern was almost identical. Electron density and temperature distribution show similar behavior with experimental results. S11 value of input port of TE10 waveguide was calculated as 17dB.

  11. Physical and chemical proceses during the dissociation of H{sub 2}S-CO{sub 2} mixtures in microwave discharges

    SciTech Connect

    Bagautdinov, A.Z.; Zhivotov, V.K.; Musinov, S.V.

    1992-07-01

    The mechanism for the plasma chemical dissociation of hydrogen sulfide mixed with carbon dioxide in a high-power microwave discharge is studied. The degree of dissociation in various regions of the discharge system and the longitudinal distribution of the composition of the products of this process at the edge of the discharge are determined experimentally. Turbulent flows are important in the realization of a high energy efficiency in the plasma chemical process.

  12. Composition dependence of microwave properties of Y-Ba-Cu-O thin films grown by metal-organic chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Waffenschmidt, E.; Sjamsudin, G.; Musolf, J.; Arndt, F.; He, X.; Heuken, M.; Heime, K.

    1995-01-01

    Thin film of Y-Ba-Cu-O of different compostition were grown on MgO and LaAlO3 substrates by metal-organic chemical-vapor deposition. Using a microwave cavity resonator, their microwave surface resistance at 24.5 GHz was measured at a temperature of 77.5 K. It varies from less than 3 mOmega to more than 50 mOmega depending on the composition of the films. The lowest surface resistances could be obtained with samples having a composition close to the ideal stoichiometry 1:2:3 but with a slight excess of copper and yttrium.

  13. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions

    SciTech Connect

    Nad, Shreya; Gu, Yajun; Asmussen, Jes

    2015-07-15

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100–260 Torr pressure range and 1.5–2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η{sub coup}) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

  14. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions.

    PubMed

    Nad, Shreya; Gu, Yajun; Asmussen, Jes

    2015-07-01

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100-260 Torr pressure range and 1.5-2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (η(coup)) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance. PMID:26233399

  15. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions

    NASA Astrophysics Data System (ADS)

    Nad, Shreya; Gu, Yajun; Asmussen, Jes

    2015-07-01

    The microwave coupling efficiency of the 2.45 GHz, microwave plasma assisted diamond synthesis process is investigated by experimentally measuring the performance of a specific single mode excited, internally tuned microwave plasma reactor. Plasma reactor coupling efficiencies (η) > 90% are achieved over the entire 100-260 Torr pressure range and 1.5-2.4 kW input power diamond synthesis regime. When operating at a specific experimental operating condition, small additional internal tuning adjustments can be made to achieve η > 98%. When the plasma reactor has low empty cavity losses, i.e., the empty cavity quality factor is >1500, then overall microwave discharge coupling efficiencies (ηcoup) of >94% can be achieved. A large, safe, and efficient experimental operating regime is identified. Both substrate hot spots and the formation of microwave plasmoids are eliminated when operating within this regime. This investigation suggests that both the reactor design and the reactor process operation must be considered when attempting to lower diamond synthesis electrical energy costs while still enabling a very versatile and flexible operation performance.

  16. Growth and characterization of large, high quality single crystal diamond substrates via microwave plasma assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nad, Shreya

    Single crystal diamond (SCD) substrates can be utilized in a wide range of applications. Important issues in the chemical vapor deposition (CVD) of such substrates include: shrinking of the SCD substrate area, stress and cracking, high defect density and hence low electronic quality and low optical quality due to high nitrogen impurities. The primary objective of this thesis is to begin to address these issues and to find possible solutions for enhancing the substrate dimensions and simultaneously improving the quality of the grown substrates. The deposition of SCD substrates is carried out in a microwave cavity plasma reactor via the microwave plasma assisted chemical vapor deposition technique. The operation of the reactor was first optimized to determine the safe and efficient operating regime. By adjusting the matching of the reactor cavity with the help of four internal tuning length variables, the system was further matched to operate at a maximum overall microwave coupling efficiency of ˜ 98%. Even with adjustments in the substrate holder position, the reactor remains well matched with a coupling efficiency of ˜ 95% indicating good experimental performance over a wide range of operating conditions. SCD substrates were synthesized at a high pressure of 240 Torr and with a high absorbed power density of 500 W/cm3. To counter the issue of shrinking substrate size during growth, the effect of different substrate holder designs was studied. An increase in the substrate dimensions (1.23 -- 2.5 times) after growth was achieved when the sides of the seeds were shielded from the intense microwave electromagnetic fields in a pocket holder design. Using such pocket holders, high growth rates of 16 -- 32 mum/hr were obtained for growth times of 8 -- 72 hours. The polycrystalline diamond rim deposition was minimized/eliminated from these growth runs, hence successfully enlarging the substrate size. Several synthesized CVD SCD substrates were laser cut and separated

  17. Flexural strength of acrylic resin repairs processed by different methods: water bath, microwave energy and chemical polymerization

    PubMed Central

    ARIOLI FILHO, João Neudenir; BUTIGNON, Luís Eduardo; PEREIRA, Rodrigo de Paula; LUCAS, Matheus Guilherme; MOLLO JUNIOR, Francisco de Assis

    2011-01-01

    Denture fractures are common in daily practice, causing inconvenience to the patient and to the dentists. Denture repairs should have adequate strength, dimensional stability and color match, and should be easily and quickly performed as well as relatively inexpensive. Objective The aim of this study was to evaluate the flexural strength of acrylic resin repairs processed by different methods: warm water-bath, microwave energy, and chemical polymerization. Material and methods Sixty rectangular specimens (31x10x2.5 mm) were made with warm water-bath acrylic resin (Lucitone 550) and grouped (15 specimens per group) according to the resin type used to make repair procedure: 1) specimens of warm water-bath resin (Lucitone 550) without repair (control group); 2) specimens of warm water-bath resin repaired with warm water-bath; 3) specimens of warm water-bath resin repaired with microwave resin (Acron MC); 4) specimens of warm water-bath resin repaired with autopolymerized acrylic resin (Simplex). Flexural strength was measured with the three-point bending in a universal testing machine (MTS 810 Material Test System) with load cell of 100 kgf under constant speed of 5 mm/min. Data were analyzed statistically by Kruskal-Wallis test (p<0.05). Results The control group showed the best result (156.04±1.82 MPa). Significant differences were found among repaired specimens and the results were decreasing as follows: group 3 (43.02±2.25 MPa), group 2 (36.21±1.20 MPa) and group 4 (6.74±0.85 MPa). Conclusion All repaired specimens demonstrated lower flexural strength than the control group. Repairs with autopolymerized acrylic resin showed the lowest flexural strength. PMID:21625742

  18. Microwave and Quantum Chemical Study of Intramolecular Hydrogen Bonding in 2-Propenylhydrazine (H2C═CHCH2NHNH2).

    PubMed

    Møllendal, Harald; Samdal, Svein; Guillemin, Jean-Claude

    2016-01-28

    The microwave spectrum of 2-propenylhydrazine (H2C═CHCH2NHNH2) was studied in the 12-61 and 72-123 GHz spectral regions. A variety of intramolecular hydrogen bonds between one or more of the hydrogen atoms of the hydrazino group and the π-electrons are possible for this compound. Assignments of the spectra of four conformers, all of which are stabilized with intramolecular hydrogen bonds are reported. One hydrogen bond exists in two of these conformers, whereas the π-electrons are shared by two hydrogen atoms in the two other rotamers. Vibrationally excited-state spectra were assigned for three of the four conformers. The internal hydrogen bonds are weak, probably in the 3-6 kJ/mol range. A total of about 4400 transitions were assigned for these four forms. The microwave work was guided by quantum chemical calculations at the B3LYP/cc-pVTZ and CCSD/cc-pVTZ levels of theory. These calculations indicated that as many as 18 conformers may exist for 2-propenylhydrazine and 11 of these have either one or two intramolecular hydrogen bonds. The four conformers detected in this work are among the rotamers with the lowest CCSD electronic energies. The CCSD method predicts rotational constants that are very close to the experimental rotational constants. The B3LYP calculations yielded quartic centrifugal distortion constants that deviated considerably from their experimental counterparts in most cases. The calculation of vibration-rotation constants and sextic centrifugal distortion constants by the B3LYP method were generally found to be in poor agreement with the corresponding experimental constants. PMID:26696467

  19. Studies on the Conformational Landscape of Tert-Butyl Acetate Using Microwave Spectroscopy and Quantum Chemical Calculations

    NASA Astrophysics Data System (ADS)

    Zhao, YueYue; Mouhib, Halima; Li, Guohua; Stahl, Wolfgang; Kleiner, Isabelle

    2014-06-01

    The tert-Butyl acetate molecule was studied using a combination of quantum chemical calculations and molecular beam Fourier transform microwave spectroscopy in the 9 to 14 GHz range. Due to its rather rigid frame, the molecule possesses only two different conformers: one of Cs and one of C1 symmetry. According to ab initio calculations, the Cs conformer is 46 kJ/mol lower in energy and is the one observed in the supersonic jet. We report on the structure and dynamics of the most abundant conformer of tert-butyl acetate, with accurate rotational and centrifugal distortion constants. Additionally, the barrier to internal rotation of the acetyl methyl group was determined. Splittings due to the internal rotation of the methyl group of up to 1.3 GHz were observed in the spectrum. Using the programs XIAM and BELGI-Cs, we determine the barrier height to be about 113 cm-1 and compare the molecular parameters obtained from these two codes. Additionally, the experimental rotational constants were used to validate numerous quantum chemical calculations. This study is part of a larger project which aims at determining the lowest energy conformers of organic esters and ketones which are of interest for flavor or perfume synthetic applications Project partly supported by the PHC PROCOPE 25059YB.

  20. Mass spectrometric studies of SiO2 deposition in an indirect plasma enhanced LPCVD system

    NASA Technical Reports Server (NTRS)

    Iyer, R.; Lile, D. L.; Mcconica, C. M.

    1993-01-01

    Reaction pathways for the low temperature deposition of SiO2 from silane and indirect plasma-excited oxygen-nitrogen mixtures are proposed based on experimental evidence gained from mass spectrometry in an indirect plasma enhanced chemical vapor deposition chamber. It was observed that about 80-85 percent of the silane was oxidized to byproduct hydrogen and only about 15-20 percent to water. Such conversion levels have led us to interpret that silanol (SiH3OH) could be the precursor for SiO2 film deposition, rather than siloxane /(SiH3)2O/ which has generally been cited in the literature. From mass spectrometry, we have also shown the effects of the plasma, and of mixing small amounts of N2 with the oxygen flow, in increasing the deposition rate of SiO2. Free radical reaction of nitric oxide, synthesized from the reaction of oxygen and nitrogen in the plasma chamber, and an *ncrease in atomic oxygen concentration, are believed to be the reasons for these SiO2 deposition rate increases. Through mass spectrometry we have, in addition, been able to identify products, presumably originating from terminating reactions, among a sequence of chemical reactions proposed for the deposition of SiO2.

  1. MICROWAVE ACCELERATED SOLVENT-FREE CHEMICAL REACTIONS, PUBLISHED IN AMPERE NEWSLETTER, ISSUE 29, JUNE 2001

    EPA Science Inventory

    The worldwide annual usage of volatile organic solvents is generally of the order of ~4 billion pounds. In the environmentally conscieous era, the focus in to design chemical processes and products that eliminate or minimize the waste generation and the ideal approach may compris...

  2. Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

    SciTech Connect

    Kawase, Kazumasa Motoya, Tsukasa; Uehara, Yasushi; Teramoto, Akinobu; Suwa, Tomoyuki; Ohmi, Tadahiro

    2014-09-01

    Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) have been treated with Ar plasma excited by microwave. The changes of the mass densities, carrier trap densities, and thicknesses of the CVD-SiO{sub 2} films with the Ar plasma treatments were investigated. The mass density depth profiles were estimated with X-Ray Reflectivity (XRR) analysis using synchrotron radiation. The densities of carrier trap centers due to defects of Si-O bond network were estimated with X-ray Photoelectron Spectroscopy (XPS) time-dependent measurement. The changes of the thicknesses due to the oxidation of Si substrates were estimated with the XRR and XPS. The mass densities of the CVD-SiO{sub 2} films are increased by the Ar plasma treatments. The carrier trap densities of the films are decreased by the treatments. The thicknesses of the films are not changed by the treatments. It has been clarified that the mass densification and defect restoration in the CVD-SiO{sub 2} films are caused by the Ar plasma treatments without the oxidation of the Si substrates.

  3. Chemical vapour deposition enhanced by atmospheric microwave plasmas: a large-scale industrial process or the next nanomanufacturing tool?

    NASA Astrophysics Data System (ADS)

    Belmonte, T.; Gries, T.; Cardoso, R. P.; Arnoult, G.; Kosior, F.; Henrion, G.

    2011-04-01

    This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of μm h-1) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO2 nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O2 micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (~500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (~1 µm), and for relatively high content in HMDSO, SiO2 walls forming hexagonal cells are obtained.

  4. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Koinkar, Pankaj M.; Patil, Sandip S.; Kim, Tae-Gyu; Yonekura, Daisuke; More, Mahendra A.; Joag, Dilip S.; Murakami, Ri-ichi

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B 2O 3 concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B 2O 3 concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/μm, respectively. The field emission current stability investigated at the preset value of ˜1 μA is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  5. Microwave enhanced alcoholysis of non-edible (algal, jatropha and pongamia) oils using chemically activated egg shell derived CaO as heterogeneous catalyst.

    PubMed

    Joshi, Girdhar; Rawat, Devendra S; Sharma, Amit Kumar; Pandey, Jitendra K

    2016-11-01

    Microwave enhanced fast and efficient alcoholysis (methanolysis and ethanolysis) of non-edible oils (algal, jatropha and pongamia) is achieved using chemically activated waste egg shell derived CaO (i.e. CaO(cesp)) as heterogeneous catalyst. CaO(cesp) was extracted from waste chicken egg shell and further activated chemically by supporting transition metal oxide. The maximum conversion was achieved using 3wt% catalysts under 700W microwave irradiation and 10:1 alcohol/oil ratio in 6min. Alcoholysis using ZnO activated CaO(cesp) catalyst has shown higher reaction yields in comparison to other modified catalysts. Methanolysis has shown better biodiesel conversion in comparison to ethanolysis. The catalyst has shown longer lifetime and sustained activity after being used for four cycles. Due to more saturated fatty acid content; algal biodiesel has shown improved fuel properties in comparison to other biodiesels. PMID:27521785

  6. Plasma-enhanced atomic layer deposition zinc oixde flexible thin film electronics

    NASA Astrophysics Data System (ADS)

    Zhao, Dalong

    This thesis demonstrates high performance flexible thin film electronics fabricated by low temperature process. A novel process for forming high quality stable oxide films using weak oxidant plasma-enhanced atomic layer deposition (PEALD) has been used to achieve fastest flexible oxide integrated circuits reported to date. In addition, a unique approach based on plasma-enhanced chemical vapor deposition (PECVD) silicon nitride for organic light emitting diodes (OLEDs) encapsulation at low temperature (<70 °C) is also reported. Among several low temperature deposition approaches PEALD process provides highly crystalline and dense ZnO thin films which are uniform and conformal at 200 ºC. Crossover measurement results also demonstrate the advantage of PEALD process in thin film deposition on flexible substrates. PEALD ZnO flexible TFTs have high field-effect mobility (˜ 20 cm2/V˙s) and excellent bias stress stability with ALD Al2O3 passivation. 15-stage ring oscillators with propagation delay of <20 nsec/stage have been successfully fabricated on flexible substrates. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date, and they are about 20 times faster than the best previous report. This thesis also presents the investigation of ZnO device physics by modeling. Non-ideal ZnO device characteristics, including passivation, contacts, and output conductance, have been well modeled and verified with experimental results. Two different approaches were also proposed to extract device parameters for compact models and form the foundation for later circuit design and simulations. A TCAD ZnO model is established and can well describe the operation physics from single transistor to simple circuits. This model is verified by reasonable agreement with experimental data. Building on the results of ZnO TFTs and circuits, several ZnO based applications have been demonstrated. Microsensors with ZnO pyroFETs have

  7. Plasma-enhanced synthesis of surfaces that kill bacteria on contact

    NASA Astrophysics Data System (ADS)

    Jampala, Soujanya Naga

    High incidences of microbial contamination and infections are a major concern in all existing and evolving technologies of medicine and biology. The propensity towards infections is directly related to bacterial colonization and biofilms on surfaces. This dissertation presents the development of surfaces that can kill bacteria on contact by using cold plasma technology. Quaternary ammonium (QA) groups are known to exhibit antibacterial characteristics in water-based environments. To overcome the limitations of residual toxicity, alternative strategies involving covalent attachment of QA groups to metallic and cellulosic surfaces have been developed. Low pressure, non-equilibrium plasma-enhanced functionalization and subsequent ex situ chemical reactions were designed for step-by-step "bottom-up" chemical synthesis of QA groups covalently anchored to surfaces. The plasma processes under selected discharge parameters generated structure- and functionality-controlled crosslinked networks of macromolecular layers with high concentrations of reactive amine groups. Subsequent derivatization of the plasma-deposited films with alkyl halides yielded surface-bound QA groups rendering surfaces with high bactericidal efficacy against Gram-positive Staphylococcus aureus and Gram-negative Klebsiella pneumoniae. Stainless steel and cotton surfaces sequentially treated with ethylene diamine plasma, n-hexyl bromide and methyl iodide exhibited at least 99.9% and 98% kill of S. aureus and K. pneumoniae respectively. The influence of chemical architecture of QA groups with different alkyl substituents on the efficacy of bactericidal surfaces was quantified. Results from this work will permit the development of novel plasma-aided technologies for the synthesis of antibacterial surfaces with potential biomedical applications. The cold plasma approach can be used on any solid material surfaces including polymers, metals, ceramics and semiconductors.

  8. Plasma enhanced vortex fluidic device manipulation of graphene oxide.

    PubMed

    Jones, Darryl B; Chen, Xianjue; Sibley, Alexander; Quinton, Jamie S; Shearer, Cameron J; Gibson, Christopher T; Raston, Colin L

    2016-08-25

    A vortex fluid device (VFD) with non-thermal plasma liquid processing within dynamic thin films has been developed. This plasma-liquid microfluidic platform facilitates chemical processing which is demonstrated through the manipulation of the morphology and chemical character of colloidal graphene oxide in water. PMID:27506139

  9. Effect of pre-cooking methods on the chemical and sensory deterioration of ready-to-eat chicken patties during chilled storage and microwave reheating.

    PubMed

    Ferreira, Valquíria C S; Morcuende, David; Madruga, Marta S; Hernández-López, Silvia H; Silva, Fábio A P; Ventanas, Sonia; Estévez, Mario

    2016-06-01

    The effects of pre-cooking methods, namely, boiling (BL), roasting (RT) and grilling (GR), refrigerated storage (14 days/+4 °C) and microwave reheating on chicken patties were studied. Physical, chemical and sensory parameters were evaluated in order to correlate the chemical deterioration of ready-to-eat chicken patties with the acceptance of the odor. Chemical deterioration was evaluated through the chemical composition, Maillard compounds, Thiobarbituric acid-reactive substances (TBARS) and volatiles. Sensory deterioration (odor liking) was performed by an acceptance test with hedonic scale. According to the TBARS values and volatile compounds generated in the head space during the examined stages, the pre-cooking method and the storage time had a significant effect on lipid oxidation, whereas reheating in a microwave had a negligible impact. At each succeeding processing stage, panelists gave lower odor scores to all samples and no significant differences were found between treatments at any stage. RT and GR patties showed less intense chemical changes and presented higher acceptation scores by the sensory panel than BL patties. Thus, the choice of pre-cooking method and control of storage conditions plays a key role in the inhibition of oxidative changes in ready-to-eat chicken patties. PMID:27478232

  10. Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics

    NASA Astrophysics Data System (ADS)

    Sato, Masaru; Takeyama, Mayumi B.; Nakata, Yoshihiro; Kobayashi, Yasushi; Nakamura, Tomoji; Noya, Atsushi

    2016-04-01

    The characteristics of SiN x films deposited by reactive sputtering and plasma-enhanced chemical vapor deposition (PECVD) are examined to obtain high-density films at low deposition temperatures. PECVD SiN x films deposited at 200 °C show low densities of 2.14-2.20 g/cm3 regardless of their composition, while their refractive index varies depending on their composition. PECVD requires the substrate temperature to obtain high-density films, because a possible cause of low-density films is the amount of Si-H bond, rather than that of N-H bond, in the films originating from hydrogen incorporated by the insufficient decomposition of SiH4 molecules at low temperatures. The sputtered SiN x films with high density are obtained at a temperature lower than 200 °C and considered a promising candidate for insulating films at low process temperatures.

  11. Dendrimer-templated Fe nanoparticles for the growth of single-wall carbon nanotubes by plasma-enhanced CVD.

    PubMed

    Amama, Placidus B; Maschmann, Matthew R; Fisher, Timothy S; Sands, Timothy D

    2006-06-01

    A fourth-generation (G4) poly(amidoamine) (PAMAM) dendrimer (G4-NH2) has been used as a template to deliver nearly monodispersed catalyst nanoparticles to SiO2/Si, Ti/Si, sapphire, and porous anodic alumina (PAA) substrates. Fe2O3 nanoparticles obtained after calcination of the immobilized Fe3+/G4-NH2 composite served as catalytic "seeds" for the growth of single-wall carbon nanotubes (SWNTs) by microwave plasma-enhanced CVD (PECVD). To surmount the difficulty associated with SWNT growth via PECVD, reaction conditions that promote the stabilization of Fe nanoparticles, resulting in enhanced SWNT selectivity and quality, have been identified. In particular, in situ annealing of Fe catalyst in an N2 atmosphere was found to improve SWNT selectivity and quality. H2 prereduction at 900 degrees C for 5 min was also found to enhance SWNT selectivity and quality for SiO2/Si supported catalyst, albeit of lower quality for sapphire supported catalyst. The application of positive dc bias voltage (+200 V) during SWNT growth was shown to be very effective in removing amorphous carbon impurities while enhancing graphitization, SWNT selectivity, and vertical alignment. The results of this study should promote the use of exposed Fe nanoparticles supported on different substrates for the growth of high-quality SWNTs by PECVD. PMID:16771309

  12. Plasma enhanced C1 chemistry for green technology

    NASA Astrophysics Data System (ADS)

    Nozaki, Tomohiro

    2013-09-01

    Plasma catalysis is one of the innovative next generation green technologies that meet the needs for energy and materials conservation as well as environmental protection. Non-thermal plasma uniquely generates reactive species independently of reaction temperature, and these species are used to initiate chemical reactions at unexpectedly lower temperatures than normal thermochemical reactions. Non-thermal plasma thus broadens the operation window of existing chemical conversion processes, and ultimately allows modification of the process parameters to minimize energy and material consumption. We have been specifically focusing on dielectric barrier discharge (DBD) as one of the viable non-thermal plasma sources for practical fuel reforming. In the presentation, room temperature one-step conversion of methane to methanol and hydrogen using a miniaturized DBD reactor (microplasma reactor) is highlighted. The practical impact of plasma technology on existing C1-chemistry is introduced, and then unique characteristics of plasma fuel reforming such as non-equilibrium product distribution is discussed.

  13. Flow injection method for the rapid determination of chemical oxygen demand based on microwave digestion and chromium speciation in flame atomic absorption spectrometry

    NASA Astrophysics Data System (ADS)

    Cuesta, A.; Todoli, J. L.; Canals, A.

    1996-12-01

    The present paper describes a new flow injection method for the determination of Chemical Oxygen Demand (COD). This method consists of a first digestion step, where the sample is heated by microwave radiation, a second one where an anionic exchange resin retains the Cr(VI) that has not been reduced by the organic matter of the sample and a third one where Cr(VI), after being eluted, is determined by flame atomic absorption spectrometry. The microwave power applied, the sulphuric acid concentration, the liquid flow in the digestion step and the sample volume were the variables studied. The recovery and precision obtained with this method are similar to those obtained using a standard semi-micro method, whereas the throughput is much higher (up to 50 determinations per hour). As regards sensitivity, by changing the sample loop volume and the concentration of dichromate, one can analyze samples with Chemical Oxygen Demand values between 25 and 5000 mg/l. The limit of detection is about 7 mg/l COD. An interesting feature of the new method, which is not shared by most other flow injection methods of Chemical Oxygen Demand determination, is that there is no matrix effect in the determination step.

  14. Novel ultra-low temperature co-fired microwave dielectric ceramic at 400 degrees and its chemical compatibility with base metal.

    PubMed

    Di, Zhou; Li-Xia, Pang; Ze-Ming, Qi; Biao-Bing, Jin; Xi, Yao

    2014-01-01

    A novel NaAgMoO4 material with spinel-like structure was synthesized by using the solid state reaction method and the ceramic sample was well densified at an extreme low sintering temperature about 400°C. Rietveld refinement of the crystal structure was performed using FULLPROF program and the cell parameters are a = b = c = 9.22039 Å with a space group F D -3 M (227). High performance microwave dielectric properties, with a permittivity ~7.9, a Qf value ~33,000 GHz and a temperature coefficient of resonant frequency ~-120 ppm/°C, were obtained. From X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS) analysis of the co-fired sample, it was found that the NaAgMoO4 ceramic is chemically compatible with both silver and aluminum at the sintering temperature and this makes it a promising candidate for the ultra-low temperature co-fired ceramics technology. Analysis of infrared and THz spectra indicated that dielectric polarizability at microwave region of the NaAgMoO4 ceramic was equally contributed by ionic displasive and electronic polarizations. Its small microwave dielectric permittivity can also be explained well by the Shannon's additive rule. PMID:25099530

  15. Novel ultra-low temperature co-fired microwave dielectric ceramic at 400 degrees and its chemical compatibility with base metal

    NASA Astrophysics Data System (ADS)

    di, Zhou; Li-Xia, Pang; Ze-Ming, Qi; Biao-Bing, Jin; Xi, Yao

    2014-08-01

    A novel NaAgMoO4 material with spinel-like structure was synthesized by using the solid state reaction method and the ceramic sample was well densified at an extreme low sintering temperature about 400°C. Rietveld refinement of the crystal structure was performed using FULLPROF program and the cell parameters are a = b = c = 9.22039 Å with a space group F D -3 M (227). High performance microwave dielectric properties, with a permittivity ~7.9, a Qf value ~33,000 GHz and a temperature coefficient of resonant frequency ~-120 ppm/°C, were obtained. From X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS) analysis of the co-fired sample, it was found that the NaAgMoO4 ceramic is chemically compatible with both silver and aluminum at the sintering temperature and this makes it a promising candidate for the ultra-low temperature co-fired ceramics technology. Analysis of infrared and THz spectra indicated that dielectric polarizability at microwave region of the NaAgMoO4 ceramic was equally contributed by ionic displasive and electronic polarizations. Its small microwave dielectric permittivity can also be explained well by the Shannon's additive rule.

  16. Performance of a novel microwave-based treatment technology for atrazine removal and destruction: Sorbent reusability and chemical stability, and effect of water matrices.

    PubMed

    Hu, Erdan; Hu, Yuanan; Cheng, Hefa

    2015-12-15

    Transition metal-exchanged dealuminated Y zeolites were used to adsorb atrazine from aqueous solutions, followed by regeneration of the sorbents and destruction of the sorbed atrazine with microwave irradiation. Exchange of copper and iron into the zeolite's micropores significantly enhanced its sorption capacity and selectivity toward atrazine, and increased the microwave-induced degradation rate of the sorbed atrazine by 3-4-folds. Both the copper- and iron-exchanged zeolites could be regenerated and reused multiple times, while the catalytic activity of the latter was more robust due to the much greater chemical stability of Fe(3+) species in the micropores. The presence of humic acid, and common cations and anions had little impact on the sorption of atrazine on the transition metal-exchanged zeolites. In the treatment of atrazine spiked in natural surface water and groundwater samples, sorptive removal of atrazine was found to be impacted by the level of dissolved organic carbon, probably through competition for the micropore spaces and pore blocking, while the water matrices exhibited no strong effect on the microwave-induced degradation of sorbed atrazine. Overall, iron-exchanged dealuminated Y zeolites show great potential for removal and destruction of atrazine from contaminated surface water and groundwater in practical implementation of the novel treatment technology. PMID:26241770

  17. Preparation of highly photocatalytic active CdS/TiO2 nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    NASA Astrophysics Data System (ADS)

    Li, Li; Wang, Lili; Hu, Tianyu; Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi

    2014-10-01

    CdS/TiO2 nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N2 adsorption-desorption measurements. The results show that the CdS/TiO2 nanocomposites were composed of anatase TiO2 and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer-Emmett-Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO2 (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO2 nanocomposites. The CdS/TiO2 (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO2 nanocomposites, controlled experiments were performed by adding different radical scavengers.

  18. [EVALUATION OF CHANGES OF GEOMETRICAL PARAMETERS OF ALGINATE DENTAL IMPRESSIONS DUE TO THE INFLUENCE OF CHEMICAL AND MICROWAVE DISINFECTION METHOD USING 3D TECHNOLOGIES].

    PubMed

    Nespraydko, V P; Shevchuk, V A; Michaylov, A A; Lyseyko, N V

    2015-01-01

    This clinical and laboratory study evaluated the effect of two methods of disinfection in different modes at the volume changes of alginate dental impressions and plaster models poured from them, as compared to the same parameters of plastic master models (PMM), using three-dimensional non-contact laser scanner and software. Immersion chemical disinfection for 15 min, microwave disinfection at 354 W for 10 minutes and combined disinfection with the power of 319 W for 4 minutes did not significantly affect the volumetric dimensional accuracy of the alginate impressions (P > 0.05). PMID:27491163

  19. Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene.

    PubMed

    Roy, Amit K; Dendooven, Jolien; Deduytsche, Davy; Devloo-Casier, Kilian; Ragaert, Kim; Cardon, Ludwig; Detavernier, Christophe

    2015-02-28

    This communication reports an approach based on plasma-enhanced atomic layer deposition of aluminium oxide for the functionalization of polytetrafluoroethylene (PTFE or "Teflon") surfaces. Alternating exposure of PTFE to oxygen plasma and trimethylaluminium causes a permanent hydrophilic effect, and a more than 10-fold improvement of the "glueability" of PTFE to aluminium. PMID:25631168

  20. Preparation of highly photocatalytic active CdS/TiO{sub 2} nanocomposites by combining chemical bath deposition and microwave-assisted hydrothermal synthesis

    SciTech Connect

    Li, Li; Wang, Lili; Hu, Tianyu; Zhang, Wenzhi; Zhang, Xiuli; Chen, Xi

    2014-10-15

    CdS/TiO{sub 2} nanocomposites were prepared from Cd and Ti (1:1 M ratio) using cetyltrimethylammonium bromide by a two-step chemical bath deposition (CBD) and microwave-assisted hydrothermal synthesis (MAHS) method. A series of nanocomposites with different morphologies and activities were prepared by varying the reaction time in the MAHS (2, 4, and 6 h). The crystal structure, morphology, and surface physicochemical properties of the nanocomposites were characterized by X-ray diffraction, UV–visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and N{sub 2} adsorption–desorption measurements. The results show that the CdS/TiO{sub 2} nanocomposites were composed of anatase TiO{sub 2} and hexagonal CdS phases with strong absorption in the visible region. The surface morphologies changed slightly with increasing microwave irradiation time, while the Brunauer–Emmett–Teller surface area increased remarkably. The photocatalytic degradation of methyl orange (MO) was investigated under UV light and simulated sunlight irradiation. The photocatalytic activity of the CdS/TiO{sub 2} (6 h) composites prepared by the MAHS method was higher than those of CdS, P25, and other CdS/TiO{sub 2} nanocomposites. The CdS/TiO{sub 2} (6 h) nanocomposites significantly affected the UV and microwave-assisted photocatalytic degradation of different dyes. To elucidate the photocatalytic reaction mechanism for the CdS/TiO{sub 2} nanocomposites, controlled experiments were performed by adding different radical scavengers. - Graphical abstract: CdS/TiO{sub 2} nanocomposites were prepared using CTAB by CBD combined with MAHS method. In addition, with increasing microwave irradiation time, the morphology of CdS/TiO{sub 2} changed from popcorn-like to wedge-like structure. - Highlights: • The CdS/TiO{sub 2} was prepared by CBD combined with MAHS two-step method under CTAB. • The morphologies of as-samples were different with the time of

  1. ORGANIC SYNTHESES USING MICROWAVES AND SUPPORTED REAGENTS

    EPA Science Inventory

    Microwave-accelerated chemical syntheses under solvent-free conditions have witnessed an explosive growth. The technique has found widespread application predominantly exploiting the inexpensive unmodified household microwave (MW) ovens although the use of dedicated MW equipment...

  2. Rapid adsorption of toxic Pb(II) ions from aqueous solution using multiwall carbon nanotubes synthesized by microwave chemical vapor deposition technique.

    PubMed

    Mubarak, Nabisab Mujawar; Sahu, Jaya Narayan; Abdullah, Ezzat Chan; Jayakumar, Natesan Subramanian

    2016-07-01

    Multiwall carbon nanotubes (MWCNTs) were synthesized using a tubular microwave chemical vapor deposition technique, using acetylene and hydrogen as the precursor gases and ferrocene as catalyst. The novel MWCNT samples were tested for their performance in terms of Pb(II) binding. The synthesized MWCNT samples were characterized using Fourier Transform Infrared (FT-IR), Brunauer, Emmett and Teller (BET), Field Emission Scanning Electron Microscopy (FESEM) analysis, and the adsorption of Pb(II) was studied as a function of pH, initial Pb(II) concentration, MWCNT dosage, agitation speed, and adsorption time, and process parameters were optimized. The adsorption data followed both Freundlich and Langmuir isotherms. On the basis of the Langmuir model, Qmax was calculated to be 104.2mg/g for the microwave-synthesized MWCNTs. In order to investigate the dynamic behavior of MWCNTs as an adsorbent, the kinetic data were modeled using pseudo first-order and pseudo second-order equations. Different thermodynamic parameters, viz., ∆H(0), ∆S(0) and ∆G(0) were evaluated and it was found that the adsorption was feasible, spontaneous and endothermic in nature. The statistical analysis revealed that the optimum conditions for the highest removal (99.9%) of Pb(II) are at pH5, MWCNT dosage 0.1g, agitation speed 160r/min and time of 22.5min with the initial concentration of 10mg/L. Our results proved that microwave-synthesized MWCNTs can be used as an effective Pb(II) adsorbent due to their high adsorption capacity as well as the short adsorption time needed to achieve equilibrium. PMID:27372128

  3. Silicon carbide for mirrors by plasma enhanced chemical vapour deposition at low temperature

    NASA Astrophysics Data System (ADS)

    Novi, A.; Taglioni, G.; Novella, L.; Citterio, O.; Ghigo, M.

    2004-06-01

    A new technology is under development to grow layers of amorphous Silicon Carbide in vacuum at temperatures below 200°C by PE-CVD technology. The layers can be used either to improve the surface quality of mirror substrates, as a polishable cladding coating, or to form self-sustaining thin mirrors in SiC. The former application is useful in particular for the coating of some varieties of SiC materials that are not well polishable or that have high residual porosity, thus obtaining good CTE matching with the substrates. The latter application is very promising to get ultra-thin mirrors by replica, by growing layers of some tenths of millimetre on an optically polished master. The paper presents the preliminary results obtained with the two mentioned possible uses of the PE-CVD SiC process.

  4. Monitoring and Analyses of Initial Stages of Graphene Growth in Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Hayashi, Yasuaki; Yamada, Junya; Kawano, Masahiro; Sano, Kazuya

    2015-09-01

    RF magnetron plasma was used for the growth of graphene. Copper films deposited by sputtering on mirror-polished silicon were used for substrates. Slant view-ports are welded to the side wall of vacuum chamber. In-situ ellipsometry is able to be carried out for the monitoring of substrate surface. The growth of graphene was started by the introduction of C2H4 gas in addition to hydrogen. Substrate temperature was controlled at 680°C at the first stage. An RF power up to 100 W was applied. C2H4 and H2 gases were introduced with the flow rate of 20 and 10 sccm, respectively. The pressure in the vacuum chamber was maintained at 200 Pa. The result of Raman analysis showed that the ratio of height of D (1350 cm-1) peak to G (1580 cm-1) peak, as well as that of 2D (2700 cm-1) peak to G peak, increased with time. Time evolution of height and width of graphene or graphite tips showed that, during the first 5 min, the width abruptly increases, while the increase speed of the height is lower than that after 5 min. The result implies that graphene sheets horizontally grow on the surface of substrate first before perpendicularly aligned CNWs grow. In order to analyze the first stage of the graphene growth, in-situ and precise measurement is required. For this purpose, in-situ ellipsometry should play an important role. Therefore we carried out a preliminary experiment of in-situ ellipsometry monitoring. Evolutions of ellipsometric parameters, Ψ and Δ, were precisely measured before the growth of graphene of 1 nm in thickness.

  5. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    SciTech Connect

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  6. Aerosol generation and charging phenomena in plasma- enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Forsyth, Bruce Riley

    This thesis is concerned with advancing the theoretical study of the origin and acquisition of particle charge from aerosol generation. A newly designed integral mobility charge analyzer was constructed and calibrated to measure the electrical charge distribution on aerosol particles between 10 nanometer (nm) and 10 micrometer ( m m). The charge analyzer can be used in a wide variety of laboratory and industrial applications due to its broad operating range. Initially, the analyzer performance was tested by generating a variety of aerosol particles with and without neutralization by two different radioactive sources. As a result, experimental charge distributions can be compared with analytical and numerical models of spray and contact electrification related to the interface's double layer. The liquid surface can be simply modeled as a flat plate electrical capacitor with a stored dipole charge layer near the interface. Experimental research will investigate the charge state of a surface double layer using the interaction of dissolved particles. Ion interactions with a particle- liquid interface in the electrical double layer can be analyzed by measuring the aerosol charge distribution from different concentrations of salts, colloids and organic solutions. However, the main thesis research goal is to monitor charged contaminants in process exhaust using the developed integral mobility charge analyzer. Experimental measurements can then be correlated with the dynamic behavior of different nucleated species in the reactor. Hypothetically, particles formed in the plasma volume will have a different charge and size distribution than exhaust line particles originating from unreacted gas species in the pump line. A thorough understanding of the charge level of particles within the plasma volume is necessary to understand the charging, trapping and behavior of contaminant species in the CVD film processes. Charge neutralization by free ion attachment in the exhaust lines must be investigated to describe the contaminant charge after exiting the plasma volume. In addition, particle number concentration and size distributions may be compared to models of aerosol coagulation from the nucleated particles during vacuum transport. Theoretical models can be corrected for the effect of Coulombic repulsion between charged particles.

  7. Glutamate biosensor based on carbon nanowalls grown using plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tomatsu, Masakazu; Hiramatsu, Mineo; Kondo, Hiroki; Hori, Masaru

    2015-09-01

    Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate. Due to the large surface area of vertical nanographene network, CNWs draw attention as platform for electrochemical sensing, biosensing and energy conversion applications. In this work, CNWs were grown on nickel substrate using inductively coupled plasma with methane/Ar mixture. After the CNW growth, the surface of CNWs was oxidized using Ar atmospheric pressure plasma to obtain super-hydrophilic surface. For the biosensing application, the surface of CNWs was decorated with platinum (Pt) nanoparticles by the reduction of hydrogen hexachloroplatinate (IV) solution. The resultant Pt particle size was estimated to be 3-4 nm. From the XPS analysis, pure Pt existed without being oxidized on the CNW surface. Electrochemical surface area of the Pt catalyst was evaluated by cyclic voltammetry. Pt-decorated CNWs will be used as an electrode for electrochemical glutamate biosensing. L-glutamate is one of the most important in the mammalian central nervous system, playing a vital role in many physiological processes. Nanoplatform based on vertical nanographene offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing.

  8. Controlling Degree of Crystalline Boron Carbide by Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Sandstrom, Joseph

    2007-03-01

    There has been a recent resurgence in the interest of semiconducting boron carbide, based on its use as a radiation hard semiconductor. Here, we present growth character and commensurate structural and electronic properties from the low temperature but large area (6" wafer) deposition of boron carbide from the solid source precursor, 1,2 - dicarbadodecaborane. Of special interest is the control over the degree of crystallinity as provided from changing plasma pressure growth.

  9. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    SciTech Connect

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  10. Numerical analysis of a mixture of Ar/NH{sub 3} microwave plasma chemical vapor deposition reactor

    SciTech Connect

    Li Zhi; Zhao Zhen; Li Xuehui

    2012-06-01

    A two-dimensional fluid model has been used to investigate the properties of plasma in Ar/NH{sub 3} microwave electron cyclotron resonance discharge at low pressure. The electromagnetic field model solved by the three-dimensional Simpson method is coupled to a fluid plasma model. The finite difference method was employed to discrete the governing equations. 40 species (neutrals, radicals, ions, and electrons) are consisted in the model. In total, 75 electron-neutral, 43 electron-ion, 167 neutral-neutral, 129 ion-neutral, 28 ion-ion, and 90 3-body reactions are used in the model. According to the simulation, the distribution of the densities of the considered plasma species has been showed and the mechanisms of their variations have been discussed. It is found that the main neutrals (Ar*, Ar**, NH{sub 3}{sup *}, NH, H{sub 2}, NH{sub 2}, H, and N{sub 2}) are present at high densities in Ar/NH{sub 3} microwave electron cyclotron resonance discharge when the mixing ratio of Ar/NH{sub 3} is 1:1 at 20 Pa. The density of NH is more than that of NH{sub 2} atom. And NH{sub 3}{sup +} are the most important ammonia ions. But the uniformity of the space distribution of NH{sub 3}{sup +} is lower than the other ammonia ions.

  11. Use of zirconium oxychloride to neutralize HF in the microwave-assisted acid dissolution of ceramic glazes for their chemical analysis by ICP-OES.

    PubMed

    Dondi, M; Fabbri, B; Mingazzini, C

    1998-04-01

    The use of a zirconium compound (ZrOCl(2)) to neutralize HF in the microwave-assisted acid dissolution of ceramic glazes for their chemical analysis was tested. Zr is a strong complexing agent for the fluorine ion and permits the determination of those elements which would form insoluble fluorides. The use of Zr implies strong spectral interferences and a high salt content; however, we found that at least 27 elements can be measured with low detection limits, and satisfactory precision and accuracy. In addition, the use of ZrOCl(2) would permit the complete analysis of a ceramic glaze with a single attack when acid-resistant mineral phases are not present. For potassium determinations in acid matrix, the addition of an ionization buffer was studied in order to increase sensitivity, avoiding ionization interferences and non-linear calibration curves. PMID:18967112

  12. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    SciTech Connect

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  13. Microwave Ovens

    MedlinePlus

    ... Required Reports for the Microwave Oven Manufacturers or Industry Exemption from Certain Reporting and Recordkeeping Requirements for ... Microwave Ovens (PDF) (PDF - 2.5MB) FDA eSubmitter Industry Guidance - Documents of Interest Notifications to Industry (PDF ...

  14. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    SciTech Connect

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C{sub 60}-containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d{sup 3}{Pi}g-a{sup 3}{Pi}u Swan bands of C{sub 2} and particularly the {Delta}v = {minus}2, {minus}1, 0, +1, and +2 sequences. These results give direct evidence that C{sub 2} is one of the products of C{sub 60} fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C{sub 60} has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H{sub 2} gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H{sub 2}, 1500 W, 850{degree}C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be {approx} 0.6 {mu}/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C{sub 60}. Energetic and mechanistic arguments are advanced to rationalize this result based on C{sub 2} as the growth species.

  15. The structure and molecular parameters of camphene determined by Fourier transform microwave spectroscopy and quantum chemical calculations

    NASA Astrophysics Data System (ADS)

    Neeman, Elias M.; Dréan, Pascal; Huet, Thérèse R.

    2016-04-01

    Camphene (C10H16) is a bicyclic monoterpene of atmospheric interest. The structure of the unique stable conformer was optimized using density functional theory and ab initio calculations. The rotational spectrum of camphene was recorded in a supersonic jet expansion with a Fourier transform microwave spectrometer over the range 2-20 GHz. Signals from the parent species and from the ten 13C isotopomers were observed in natural abundance. The rotational and centrifugal distortion parameters were fitted to a Watson's Hamiltonian in the A-reduction. Complex line-shapes resulting from a magnetic interaction associated with the pairs of hydrogen nuclei in the methylene groups was observed and modeled. The rotational constants were used together with equilibrium structure to determine the r0 and the rm(1) gas-phase geometries of the carbon skeleton. The present work provides the first spectroscopic characterization of camphene in the gas phase.

  16. A facile microwave assisted green chemical synthesis of novel piperidino 2-thioxoimidazolidin-4-ones and their in vitro microbiological evaluation.

    PubMed

    Kanagarajan, V; Thanusu, J; Gopalakrishnan, M

    2011-02-01

    A series of novel hybrid heterocyclic compounds, 3-(3-alkyl-2,6-diarylpiperin-4-ylidene)-2-thioxoimidazolidin-4-ones were synthesised and a comparative study was also carried out under microwave irradiation. The synthesised compounds were characterised by their melting points, elemental analysis, MS, FT-IR, one-dimensional NMR (1H, D(2)O exchanged 1H and (13)C), two dimensional HOMOCOSY and NOESY spectroscopic data. All the synthesised title compounds were screened for their in vitro antibacterial and antifungal activity against clinically isolated strains namely B. subtilis, M. luteus, S. typhii, S. paratyphii B, S. felxneri, P. vulgaris, A. niger, Mucor, Rhizopus and M. gypsuem and the results were discussed. PMID:20583857

  17. GREENER SYNTHETIC TRANSFORMATIONS USING MICROWAVES

    EPA Science Inventory

    Microwave irradiation has been used for a variety of organic transformations wherein chemical reactions are expedited because of selective adsorption of microwave (MW) energy by polar molecules, non-polar molecules being inert to the MW dielectric loss. The MW application under s...

  18. Improved film quality of plasma enhanced atomic layer deposition SiO{sub 2} using plasma treatment cycle

    SciTech Connect

    Kim, Haiwon; Chung, Ilsub; Kim, Seokyun; Shin, Seungwoo; Jung, Wooduck; Hwang, Ryong; Jeong, Choonsik; Hwang, Hanna

    2015-01-15

    Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO{sub 2}) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical NAND flash memory devices. The comparative angle resolved x-ray photoelectron spectroscopy studies show the plasma treatment cycle causes to shift the core level binding energy (chemical shifts) in the SiO{sub 2} film. The wet etch rates with respect to plasma treatment cycle times were varied due to curing of the SiO{sub 2} network defects by Ar{sup +} ions and oxygen radicals. It is assumed that the angle between the bonds linking SiO{sub 4} tetrahedra is a critical point understanding the variation in wet etch rate of SiO{sub 2}. The features of wet etch rate of low temperature high quality SiO{sub 2} demonstrated lower than high temperature low-pressure chemical vapor deposition (LP-CVD) SiO{sub 2} values. In addition, the better step-coverage compared to that of the LP-CVD SiO{sub 2} film was achieved from the deep trench structure having the 20:1 aspect ratio. PE-ALD SiO{sub 2} with plasma treatment cycle showed excellent I–V properties with higher breakdown voltage compared to LP-CVD SiO{sub 2} and similar to the thermal SiO{sub 2} carrier transport plot.

  19. Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

    SciTech Connect

    Stradins, P.; Kunz, O.; Young, D. L.; Yan, Y.; Jones, K. M.; Xu, Y.; Reedy, R. C.; Branz, H. M.; Aberle, A. G.; Wang, Q.

    2007-01-01

    Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

  20. Microwave-assisted catalytic fast pyrolysis of biomass for bio-oil production using chemical vapor deposition modified HZSM-5 catalyst.

    PubMed

    Zhang, Bo; Zhong, Zhaoping; Chen, Paul; Ruan, Roger

    2015-12-01

    Chemical vapor deposition with tetra-ethyl-orthosilicate as the modifier was applied to deposit the external acid sites of HZSM-5, and the modified HZSM-5 samples were used for the microwave-assisted catalytic fast pyrolysis (MACFP) of biomass for bio-oil production. The experimental results showed that the external acid sites of HZSM-5 decreased significantly when SiO2 deposited amount increased from 0% to 5.9%. For product distribution, the coke yield decreased, the oil fraction yield decreased at first and then increased, and the yields of water and gas first increased and then decreased over the range of SiO2 deposited amount studied. For chemical compositions in oil fraction, the relative contents of aliphatic hydrocarbons, aromatic hydrocarbons and oxygen-containing aromatic compounds first increased to maximum values and then decreased, while the relative content of oxygen-containing aliphatic compounds first decreased and then increased with increasing SiO2 deposited amount. PMID:26318925

  1. Chemically coupled microwave and ultrasonic pre-hydrolysis of pulp and paper mill waste-activated sludge: effect on sludge solubilisation and anaerobic digestion.

    PubMed

    Tyagi, Vinay Kumar; Lo, Shang-Lien; Rajpal, Ankur

    2014-05-01

    The effects of alkali-enhanced microwave (MW; 50-175 °C) and ultrasonic (US) (0.75 W/mL, 15-60 min) pretreatments, on solubilisation and subsequent anaerobic digestion efficiency of pulp and paper mill waste-activated sludge, were investigated. Improvements in total chemical oxygen demand and volatile suspended solids (VSS) solubilisation were limited to 33 and 39 % in MW pretreatment only (175 °C). It reached 78 and 66 % in combined MW-alkali pretreatment (pH 12 + 175 °C), respectively. Similarly, chemical oxygen demand and VSS solubilisation were 58 and 37 % in US pretreatment alone (60 min) and it improved by 66 and 49 % after US-alkali pretreatment (pH 12 + 60 min), respectively. The biogas yield for US 60 min-alkali (pH 12)-pretreated sludge was significantly improved by 47 and 20 % over the control and US 60 reactors, respectively. The biogas generation for MW (150 °C)-alkali (pH 12)-pretreated sludge was only 6.3 % higher than control; however, it was 8.3 % lower than the MW (150 °C) reactor, which was due to the inhibition of anaerobic activity under harsh thermal-alkali treatment condition. PMID:24488518

  2. Photoinduced Charge Transfer at Metal Oxide/Oxide Interfaces Prepared with Plasma Enhanced Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Kaur, Manpuneet

    LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO 3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3. Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO 4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements. This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO 3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O 3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM). The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient

  3. Synthesis via a Microwave-Assisted Wet Chemical Method and Characterization of Bi2Te3 with Various Morphologies

    NASA Astrophysics Data System (ADS)

    Chen, Song; Cai, Kefeng; Shen, Shirley

    2016-03-01

    Bi2Te3 with various morphologies, such as microrods, nanoplates, and nanoflowers, has been successfully fabricated by a microwave-assisted method in ethylene glycol solution without any surfactant. The structures and morphologies of the obtained products have been characterized by powder x-ray diffraction and field-emission scanning electron microscopy. Based on time-dependent experiments, a possible formation mechanism of the Bi2Te3 has been proposed. The concentration of KOH in the solution controls the rate of the disproportionation reaction of Te and plays an important role in the formation of the various morphologies of Bi2Te3. The electrical properties of bulk Bi2Te3 materials obtained by cold pressing and then vacuum heat treatment of the Bi2Te3 nanostructures with various morphologies have also been investigated. The highest power factor among the studied samples, ˜17.3 μW cm-1 K-2, was achieved using Bi2Te3 nanoflowers.

  4. Role of plasma enhanced atomic layer deposition reactor wall conditions on radical and ion substrate fluxes

    SciTech Connect

    Sowa, Mark J.

    2014-01-15

    Chamber wall conditions, such as wall temperature and film deposits, have long been known to influence plasma source performance on thin film processing equipment. Plasma physical characteristics depend on conductive/insulating properties of chamber walls. Radical fluxes depend on plasma characteristics as well as wall recombination rates, which can be wall material and temperature dependent. Variations in substrate delivery of plasma generated species (radicals, ions, etc.) impact the resulting etch or deposition process resulting in process drift. Plasma enhanced atomic layer deposition is known to depend strongly on substrate radical flux, but film properties can be influenced by other plasma generated phenomena, such as ion bombardment. In this paper, the chamber wall conditions on a plasma enhanced atomic layer deposition process are investigated. The downstream oxygen radical and ion fluxes from an inductively coupled plasma source are indirectly monitored in temperature controlled (25–190 °C) stainless steel and quartz reactors over a range of oxygen flow rates. Etch rates of a photoresist coated quartz crystal microbalance are used to study the oxygen radical flux dependence on reactor characteristics. Plasma density estimates from Langmuir probe ion saturation current measurements are used to study the ion flux dependence on reactor characteristics. Reactor temperature was not found to impact radical and ion fluxes substantially. Radical and ion fluxes were higher for quartz walls compared to stainless steel walls over all oxygen flow rates considered. The radical flux to ion flux ratio is likely to be a critical parameter for the deposition of consistent film properties. Reactor wall material, gas flow rate/pressure, and distance from the plasma source all impact the radical to ion flux ratio. These results indicate maintaining chamber wall conditions will be important for delivering consistent results from plasma enhanced atomic layer deposition

  5. Microwave detector

    DOEpatents

    Meldner, Heiner W.; Cusson, Ronald Y.; Johnson, Ray M.

    1986-01-01

    A microwave detector (10) is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite (26, 28) produces a magnetization field flux that links a B-dot loop (16, 20). The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means (18, 22) are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  6. Microwave detector

    DOEpatents

    Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

    1985-02-08

    A microwave detector is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite produces a magnetization field flux that links a B-dot loop. The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  7. Microwave and Quantum Chemical Study of Intramolecular Hydrogen Bonding in 2-Propynylhydrazine (HC≡CCH2NHNH2).

    PubMed

    Møllendal, Harald; Samdal, Svein; Guillemin, Jean-Claude

    2016-06-16

    The microwave spectrum of 2-propynylhydrazine (HC≡CCH2NHNH2) was investigated in the 23-124 GHz spectral interval. The spectra of two conformers denoted I and II were assigned. I is the lower-energy form, and relative intensity measurements yielded an internal energy difference of 3.0(4) kJ/mol between I and II. The spectra of the ground and five vibrationally excited states were assigned for I, whereas only the spectrum of the ground vibrational state was assigned for II. Both I and II are each stabilized simultaneously by two intramolecular hydrogen bonds. The first of these hydrogen bonds is formed between the hydrogen atom of the -NH- part of the hydrazino group, and the second internal hydrogen bond is formed between one of the hydrogen atoms of the -NH2 part. The π-electrons of the triple bond is thus shared by these two hydrogen atoms. The shortest contact between a hydrogen atom of the hydrazino group and the π-electrons of the ethynyl group is found in lower-energy conformer I. The conformational properties of 2-propynylhydrazine were explored by MP2/cc-pVTZ and CCSD/cc-pVQZ calculations. The CCSD method predicts that seven rotameric forms exist for this compound. Five of these rotamers are stabilized by internal hydrogen bonding. The simultaneous sharing of the π-electrons of the triple bond by two hydrogen atoms occurs only in Conformers I and II, which are predicted to be the two forms with the lowest energies, with I 2.52 kJ/mol lower in energy than II. The effective rotational constants of the ground vibrational states of I and II were predicted by a combination of MP2 and CCSD calculations, whereas centrifugal distortion constants and vibration-rotation constants were calculated by the MP2 method. The theoretical spectroscopic constants are compared with the experimental counterparts. It is concluded that more refined calculations are necessary to obtain complete agreement. PMID:27196111

  8. Fabrication and characterization of ZnO nanorods/p-6H-SiC heterojunction LED by microwave-assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Hassan, J. J.; Mahdi, M. A.; Ramizy, Asmiet; Abu Hassan, H.; Hassan, Z.

    2013-01-01

    High-quality vertically aligned zinc oxide nanorods were successfully grown on p-type 6H-SiC substrate by microwave-assisted chemical bath deposition. The novel seed material poly(vinyl alcohol)-Zn(OH)2 nanocomposites was used to seed the 6H-SiC substrate. X-ray diffraction analysis and field emission scanning electron microscopy showed that the synthesized ZnO nanorods were vertically well aligned in the direction of the (0 0 2) plane of the hexagonal structure. The optical properties were examined by photoluminescence spectroscopy, which showed a high-intensity UV peak compared with visible defect peaks. The current-voltage property proved the good rectifier characteristic of the n-type ZnO nanorod/p-type SiC diode heterojunction. The electroluminescence emission of the heterojunction LED was sufficiently high to be seen with the naked eye, with a broad peak centered at the green part of the visible spectrum.

  9. Chemical characteristics of different parts of Coreopsis tinctoria in China using microwave-assisted extraction and high-performance liquid chromatography followed by chemometric analysis.

    PubMed

    Lam, Shing-Chung; Liu, Xin; Chen, Xian-Qiang; Hu, De-Jun; Zhao, Jing; Long, Ze-Rong; Fan, Bing; Li, Shao-Ping

    2016-08-01

    Coreopsis tinctoria, also called "snow chrysanthemum" in China, is a flower tea material that has been reported to possess excellent pharmacological properties such as antioxidant and antidiabetic activities. The chemical characteristics of different parts (flowers, buds, seeds, stems, and leaves) of C. tinctoria were investigated based on microwave-assisted extraction and the simultaneous determination of 13 major active compounds by high-performance liquid chromatography, including taxifolin-7-O-glucoside, chlorogenic acid, (R/S)-flavanomarein, isocoreopsin, quercetagetin-7-O-glucoside, isookanin, 5,7,3',5'-tetrahydroxyflavanone-7-O-glucoside, marein, 3,5-dicaffeoylquinic acid, coreopsin, okanin, 5,7,3',5'-tetrahydroxyflavanone, and N(1) ,N(5) ,N(10) ,N(14) -tetra-p-coumaroylspermine. Chemometric analysis based on the contents of investigated compounds from 13 samples showed that C. tinctoria and the related flower tea materials, Chrysanthemum morifolium cv "Hangju" and "Gongju," were in different clusters, and different parts (flowers, buds, seeds, stems, and leaves) of C. tinctoria were obviously different. This study is helpful for the quality control and pharmacological evaluation of different parts from C. tinctoria and its related products. PMID:27291468

  10. Microwave-assisted chemical-vapor-induced in situ polymerization of polyaniline nanofibers on graphite electrode for high-performance supercapacitor.

    PubMed

    Li, Xiaoqin; Yang, Li; Lei, Ying; Gu, Li; Xiao, Dan

    2014-11-26

    Polyaniline (PANI) nanofibers-coated graphite electrode is fabricated by microwave-assisted chemical vapor induced in situ polymerization in the presence of ammonium persulfate. The microstructure and electrochemical performance of the as-prepared nanofibers are investigated in detail. The obtained PANI nanofibers at the optimum volume ratio of 4% aniline, with some protuberances on the surface and the diameter from 50 to 100 nm, are coated onto the surface of graphite electrode. The PANI-coated graphite electrodes display the best electrochemical performance in 6 M H2SO4 electrolyte, including a large reversible capacity of 2136 F g(-1) at the current density of 1 A g(-1) and excellent rate capability. In particular, The PANI-coated graphite electrode exhibits a long cycle life by retaining 91% of the initial specific capacitance after 1000 cycles. More importantly, a symmetric supercapacitor was fabricated using PANI-coated graphite electrode, showing maximum energy density and power density of 24 Wh kg(-1) and 6000 W kg(-1), respectively. PMID:25361469

  11. Technical and Engineering Feasibility Study of the Vitrification of Plutonium-Bearing Sludges at the Krasnoyarsk Mining and Chemical Combine by Means of Microwave Heating

    SciTech Connect

    Revenko, Y.A.; Kudinov, K.G.; Tretyakov, A.A.; Vassilyev, A.V.; Borisov, G.B.; Nazarov, A.V.; Aloy, A.S.; Shvedov, A.A.; Gusakov, B.V.; Jardine, L.J.

    2000-03-03

    This engineering feasibility study compared three possible technical options and their economic viability of processing plutonium-bearing sludges containing 0.6 MT of weapons-grade Pu accumulated at the Mining and Chemical Combine (MCC) at Krasnoyarsk. In Option 1, the baseline, the sludges are processed by extraction and purification of plutonium for storage using existing technologies, and the non-soluble radioactive residues generated in these processes undergo subsequent solidification by cementation. Options 2 and 3 involve the direct immobilization of plutonium-bearing sludges into a solid matrix (without any Pu extraction) using a microwave solidification process in a metal crucible to produce a glass, which is boron-silicate in Option 2 and phosphate glass in Option 3. In all three options, the solid radioactive waste end products will be placed in storage for eventual geologic disposal. Immobilization of residual plutonium into glass-like matrices provides both safer storage over the lifetime of the radionuclides and greater security against unauthorized access to stored materials than does the extraction and concentration of PuO{sub 2}, supporting our efforts toward non-proliferation of fissile materials. Although immobilization in boron-silicate glass appears now to be marginally preferable compared to the phosphate glass option, a number of technical issues remain to be assessed by further study to determine the preferable immobilization option.

  12. Automated radioanalytical system incorporating microwave-assisted sample preparation, chemical separation, and online radiometric detection for the monitoring of total 99Tc in nuclear waste processing streams.

    PubMed

    Egorov, Oleg B; O'Hara, Matthew J; Grate, Jay W

    2012-04-01

    An automated fluidic instrument is described that rapidly determines the total (99)Tc content of aged nuclear waste samples, where the matrix is chemically and radiologically complex and the existing speciation of the (99)Tc is variable. The monitor links microwave-assisted sample preparation with an automated anion exchange column separation and detection using a flow-through solid scintillator detector. The sample preparation steps acidify the sample, decompose organics, and convert all Tc species to the pertechnetate anion. The column-based anion exchange procedure separates the pertechnetate from the complex sample matrix, so that radiometric detection can provide accurate measurement of (99)Tc. We developed a preprogrammed spike addition procedure to automatically determine matrix-matched calibration. The overall measurement efficiency that is determined simultaneously provides a self-diagnostic parameter for the radiochemical separation and overall instrument function. Continuous, automated operation was demonstrated over the course of 54 h, which resulted in the analysis of 215 samples plus 54 hly spike-addition samples, with consistent overall measurement efficiency for the operation of the monitor. A sample can be processed and measured automatically in just 12.5 min with a detection limit of 23.5 Bq/mL of (99)Tc in low activity waste (0.495 mL sample volume), with better than 10% RSD precision at concentrations above the quantification limit. This rapid automated analysis method was developed to support nuclear waste processing operations planned for the Hanford nuclear site. PMID:22440010

  13. Validating optical emission spectroscopy as a diagnostic of microwave activated CH{sub 4}/Ar/H{sub 2} plasmas used for diamond chemical vapor deposition

    SciTech Connect

    Ma Jie; Ashfold, Michael N. R.; Mankelevich, Yuri A.

    2009-02-15

    Spatially resolved optical emission spectroscopy (OES) has been used to investigate the gas phase chemistry and composition in a microwave activated CH{sub 4}/Ar/H{sub 2} plasma operating at moderate power densities ({approx}30 W cm{sup -3}) and pressures ({<=}175 Torr) during chemical vapor deposition of polycrystalline diamond. Several tracer species are monitored in order to gain information about the plasma. Relative concentrations of ground state H (n=1) atoms have been determined by actinometry, and the validity of this method have been demonstrated for the present experimental conditions. Electronically excited H (n=3 and 4) atoms, Ar (4p) atoms, and C{sub 2} and CH radicals have been studied also, by monitoring their emissions as functions of process parameters (Ar and CH{sub 4} flow rates, input power, and pressure) and of distance above the substrate. These various species exhibit distinctive behaviors, reflecting their different formation mechanisms. Relative trends identified by OES are found to be in very good agreement with those revealed by complementary absolute absorption measurements (using cavity ring down spectroscopy) and with the results of complementary two-dimensional modeling of the plasma chemistry prevailing within this reactor.

  14. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    SciTech Connect

    Tiwari, Rajanish N.; Chang Li

    2010-05-15

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {l_brace}100{r_brace} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was {approx}530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/{mu}m) and high current-density (1.6 mA/cm{sup 2}) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  15. Automated Radioanalytical System Incorporating Microwave-Assisted Sample Preparation, Chemical Separation, and Online Radiometric Detection for the Monitoring of Total 99Tc in Nuclear Waste Processing Streams

    SciTech Connect

    Egorov, Oleg; O'Hara, Matthew J.; Grate, Jay W.

    2012-04-03

    An automated fluidic instrument is described that rapidly determines the total 99Tc content of aged nuclear waste samples, where the matrix is chemically and radiologically complex and the existing speciation of the 99Tc is variable. The monitor links microwave-assisted sample preparation with an automated anion exchange column separation and detection using a flow-through solid scintillator detector. The sample preparation steps acidify the sample, decompose organics, and convert all Tc species to the pertechnetate anion. The column-based anion exchange procedure separates the pertechnetate from the complex sample matrix, so that radiometric detection can provide accurate measurement of 99Tc. We developed a preprogrammed spike addition procedure to automatically determine matrix-matched calibration. The overall measurement efficiency that is determined simultaneously provides a self-diagnostic parameter for the radiochemical separation and overall instrument function. Continuous, automated operation was demonstrated over the course of 54 h, which resulted in the analysis of 215 samples plus 54 hly spike-addition samples, with consistent overall measurement efficiency for the operation of the monitor. A sample can be processed and measured automatically in just 12.5 min with a detection limit of 23.5 Bq/mL of 99Tc in low activity waste (0.495 mL sample volume), with better than 10% RSD precision at concentrations above the quantification limit. This rapid automated analysis method was developed to support nuclear waste processing operations planned for the Hanford nuclear site.

  16. Synthesis of highly transparent ultrananocrystalline diamond films from a low-pressure, low-temperature focused microwave plasma jet

    PubMed Central

    2012-01-01

    This paper describes a new low-temperature process underlying the synthesis of highly transparent ultrananocrystalline diamond [UNCD] films by low-pressure and unheated microwave plasma jet-enhanced chemical vapor deposition with Ar-1%CH4-10%H2 gas chemistry. The unique low-pressure/low-temperature [LPLT] plasma jet-enhanced growth even with added H2 and unheated substrates yields UNCD films similar to those prepared by plasma-enhanced growth without addition of H2 and heating procedure. This is due to the focused plasma jet which effectively compensated for the sluggish kinetics associated with LPLT growth. The effects of pressure on UNCD film synthesis from the microwave plasma jet were systematically investigated. The results indicated that the substrate temperature, grain size, surface roughness, and sp3 carbon content in the films decreased with decreasing pressure. The reason is due to the great reduction of Hα emission to lower the etching of sp2 carbon phase, resulting from the increase of mean free path with decreasing pressure. We have demonstrated that the transition from nanocrystalline (80 nm) to ultrananocrystalline (3 to 5 nm) diamond films grown via microwave Ar-1%CH4-10%H2 plasma jets could be controlled by changing the pressure from 100 to 30 Torr. The 250-nm-thick UNCD film was synthesized on glass substrates (glass transition temperature [Tg] 557°C) using the unique LPLT (30 Torr/460°C) microwave plasma jet, which produced UNCD films with a high sp3 carbon content (95.65%) and offered high optical transmittance (approximately 86% at 700 nm). PMID:22260391

  17. Microwave Plasma-Activated Chemical Vapor Deposition of Nitrogen-Doped Diamond. I. N2/H2 and NH3/H2 Plasmas.

    PubMed

    Truscott, Benjamin S; Kelly, Mark W; Potter, Katie J; Johnson, Mack; Ashfold, Michael N R; Mankelevich, Yuri A

    2015-12-31

    We report a combined experimental/modeling study of microwave activated dilute N2/H2 and NH3/H2 plasmas as a precursor to diagnosis of the CH4/N2/H2 plasmas used for the chemical vapor deposition (CVD) of N-doped diamond. Absolute column densities of H(n = 2) atoms and NH(X(3)Σ(-), v = 0) radicals have been determined by cavity ring down spectroscopy, as a function of height (z) above a molybdenum substrate and of the plasma process conditions, i.e., total gas pressure p, input power P, and the nitrogen/hydrogen atom ratio in the source gas. Optical emission spectroscopy has been used to investigate variations in the relative number densities of H(n = 3) atoms, NH(A(3)Π) radicals, and N2(C(3)Πu) molecules as functions of the same process conditions. These experimental data are complemented by 2-D (r, z) coupled kinetic and transport modeling for the same process conditions, which consider variations in both the overall chemistry and plasma parameters, including the electron (Te) and gas (T) temperatures, the electron density (ne), and the plasma power density (Q). Comparisons between experiment and theory allow refinement of prior understanding of N/H plasma-chemical reactivity, and its variation with process conditions and with location within the CVD reactor, and serve to highlight the essential role of metastable N2(A(3)Σ(+)u) molecules (formed by electron impact excitation) and their hitherto underappreciated reactivity with H atoms, in converting N2 process gas into reactive NHx (x = 0-3) radical species. PMID:26593853

  18. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    NASA Astrophysics Data System (ADS)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  19. A microwave and quantum chemical study of (trifluoromethyl)thiolacetic acid, CF3COSH, a compound with an unusual double-minimum potential.

    PubMed

    Møllendal, Harald

    2007-03-15

    The microwave spectra of CF3COSH and one deuterated species, CF3COSD, have been investigated by Stark spectroscopy in the 40-80 GHz spectral range at -78 degrees C and by quantum chemical calculations using the HF, MP2, and B3LYP procedures with the aug-cc-pVTZ basis set. The microwave spectrum of one conformer was assigned. The conformations of the COSH and CF3 groups determine the overall conformation of this rotamer. It was not possible experimentally to find precise values for the associated dihedral angles, but it appears that the COSH group is distorted somewhat from an exact synperiplanar arrangement, while the CF3 group is rotated several degrees from a position where one of the C-F bonds eclipses the C-S bond. This rotamer tunnels through a transition state that has an exact Cs symmetry, where one C-F bond eclipses the C-S bond and the COSH group is synperiplanar. Relative intensity measurements yielded 28(15) cm-1 for the tunneling frequency. Two additional vibrationally excited states were assigned and their frequencies determined to be 94(30) and 184(40) cm-1, respectively. The theoretical calculations predict conflicting conformational properties for the identified rotamer. The B3LYP calculations find an exact synperiplanar arrangement for the COSH group, whereas the MP2 and HF calculations predict that this group is distorted slightly form this conformation. One of the C-F bonds is found to eclipse the C-S bond in the B3LYP calculations, while the MP2 calculations predict a slight deviation and the HF calculations a large deviation from the eclipsed position, as the corresponding F-C-C-S dihedral angle is calculated to be 0.9 degrees (MP2) and 27.6 degrees (HF). All three methods of calculations predict that a second rotamer coexists with the identified form but is several kJ/mol less stable. The spectrum of this form, which has overall Cs symmetry and is predicted to have an antiperiplanar conformation for the COSH group with one of the C-F bonds

  20. Microwave discharge electrodeless lamps (MDELs). Part IX. A novel MDEL photoreactor for the photolytic and chemical oxidation treatment of contaminated wastewaters.

    PubMed

    Horikoshi, Satoshi; Tsuchida, Akihiro; Shinomiya, Tomohiro; Serpone, Nick

    2015-12-01

    This article reports on the fabrication and enhanced performance of a novel microwave discharge electrodeless lamp (MDEL) consisting of a three layered cylindrical structure that was effective in the remediation of wastewater containing the 2,4-D herbicide and the near total sterilization of bacteria-contaminated pond water (E. coli and other microorganisms) through photolysis with the emitted vacuum-UV (185 nm) and UVC (254 nm) light from the MDEL and through chemical oxidation with reactive oxygen species (ROS) produced by the photolysis of dioxygen and air oxygen through one of the photoreactors. The flow rates of the 1.0 L contaminated waters were 0.6 and 1.2 L min(-1). The integrated UV/ROSO2 and UV/ROSair methods used to carry out the degradation of 2,4-D and sterilization processes were more effective than either the UV method alone or the ROSO2 and ROSair methods for short time periods (5 or 8 min). At a lower flow rate, 79% of 2,4-D was degraded by the UV/ROSO2 method and 55% by UV/ROSair after 8 min. At a faster flow rate of 1.2 L min(-1), degradation of 2,4-D in 1.0 L volume of water was 84% and 77% complete by the UV/ROSO2 and the UV/ROSair method, respectively, after 8 min of irradiation. The number of kills of E. coli bacteria was nearly quantitative (98 and 99%) by the UV/ROSO2 and UV/ROSair methods after treating the contaminated water for 5 min. The decrease of total viable microorganisms in pond water was 90% and 80% after 5 min of microwave irradiation at a flow rate of 1.2 L min(-1) by the integrated methods UV/ROSO2 and UV/ROSair, respectively. The rate of flow of oxygen gas through the photoreactor impacted the extent of degradation and the related dynamics of the 2,4-D herbicide. PMID:26456244

  1. Atmospheric pressure microwave assisted heterogeneous catalytic reactions.

    PubMed

    Chemat-Djenni, Zoubida; Hamada, Boudjema; Chemat, Farid

    2007-01-01

    The purpose of the study was to investigate microwave selective heating phenomena and their impact on heterogeneous chemical reactions. We also present a tool which will help microwave chemists to answer to such questions as "My reaction yields 90% after 7 days at reflux; is it possible to obtain the same yield after a few minutes under microwaves?" and to have an approximation of their reactions when conducted under microwaves with different heterogeneous procedures. This model predicting reaction kinetics and yields under microwave heating is based on the Arrhenius equation, in agreement with experimental data and procedures. PMID:17909495

  2. RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

    NASA Astrophysics Data System (ADS)

    Chopade, S. S.; Nayak, C.; Bhattacharyya, D.; Jha, S. N.; Tokas, R. B.; Sahoo, N. K.; Deo, M. N.; Biswas, A.; Rai, Sanjay; Thulasi Raman, K. H.; Rao, G. M.; Kumar, Niranjan; Patil, D. S.

    2015-11-01

    Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)3), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)4), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.

  3. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  4. Rotational Spectroscopy and Quantum Chemical Calculations of a Fruit Ester: the Microwave Spectrum of n-BUTYL Acetate

    NASA Astrophysics Data System (ADS)

    Attig, T.; Sutikdja, L. W.; Kannengiesser, R.; Stahl, W.; Kleiner, I.

    2013-06-01

    In the course of our studies on a number of aliphatic ester molecules and natural substances, the rotational spectrum of n-butyl acetate (CH_{3}-COO-C_4H_9) has been recorded for the first time in the 10-13.5 GHz frequency range, using the MB-FTMW spectrometer in Aachen, with an instrumental uncertainty of a few kHz for unblended lines. Three conformers were observed. The main conformer with C_{1} symmetry has a strong spectrum. The other two conformers have C_{s} and C_{1} symmetries. Their intensities are considerably weaker. The quantum chemical calculations of specific conformers were carried out at the MP2/6-311++G(d,p) level, and for the main conformer different levels of theory were calculated. To analyze the internal rotation of the acetyl methyl groups the codes XIAM (based on the Combined Axis Method) and BELGI (based on the Rho-Axis-Method) were used to model the large amplitude motion. The molecular structures of the three conformers were determined and the values of the experimental rotational constants were compared with those obtained by ab initio methods. For all conformers torsional barriers of approximately 100 cm^{-1} were found. This study is part of a larger project which aims at determining the lowest energy conformers and their structures of organic esters and ketones which are of interest for flavour or perfume synthetic applications. Project partly supported by the PHC PROCOPE 25059YB

  5. Microwave generator

    SciTech Connect

    Kwan, T.J.T.; Snell, C.M.

    1987-03-31

    A microwave generator is provided for generating microwaves substantially from virtual cathode oscillation. Electrons are emitted from a cathode and accelerated to an anode which is spaced apart from the cathode. The anode has an annular slit there through effective to form the virtual cathode. The anode is at least one range thickness relative to electrons reflecting from the virtual cathode. A magnet is provided to produce an optimum magnetic field having the field strength effective to form an annular beam from the emitted electrons in substantial alignment with the annular anode slit. The magnetic field, however, does permit the reflected electrons to axially diverge from the annular beam. The reflected electrons are absorbed by the anode in returning to the real cathode, such that substantially no reflexing electrons occur. The resulting microwaves are produced with a single dominant mode and are substantially monochromatic relative to conventional virtual cathode microwave generators. 6 figs.

  6. SOLVENT-FREE CHEMICAL TRANSFORMATIONS USING MICROWAVE IRRADIATION. 32ND ACS CENTRAL REGIONAL MEETING, MAY 16-19, 2000, ABSTRACTS & PROGRAM, NORTHERN KENTUCKY CONVENTION CENTER, COVINGTON, KY. AMERICAN CHEMICAL SOCIETY, 1999, P. 121.

    EPA Science Inventory

    Microwave-expedited solvent-free synthetic processes will be described that involve the exposure of neat reactants to microwave (MW) irradiation in the presence of supported reagents or catalysts on minineral oxides. Recent developments will be presented on the synthetic utility...

  7. Microwave furnace having microwave compatible dilatometer

    DOEpatents

    Kimrey, Jr., Harold D.; Janney, Mark A.; Ferber, Mattison K.

    1992-01-01

    An apparatus for measuring and monitoring a change in the dimension of a sample being heated by microwave energy is described. The apparatus comprises a microwave heating device for heating a sample by microwave energy, a microwave compatible dilatometer for measuring and monitoring a change in the dimension of the sample being heated by microwave energy without leaking microwaves out of the microwave heating device, and a temperature determination device for measuring and monitoring the temperature of the sample being heated by microwave energy.

  8. Microwave furnace having microwave compatible dilatometer

    DOEpatents

    Kimrey, H.D. Jr.; Janney, M.A.; Ferber, M.K.

    1992-03-24

    An apparatus for measuring and monitoring a change in the dimension of a sample being heated by microwave energy is described. The apparatus comprises a microwave heating device for heating a sample by microwave energy, a microwave compatible dilatometer for measuring and monitoring a change in the dimension of the sample being heated by microwave energy without leaking microwaves out of the microwave heating device, and a temperature determination device for measuring and monitoring the temperature of the sample being heated by microwave energy. 2 figs.

  9. Plasma Enhanced Atomic Layer Deposition of Cooper Seed Layers at Low Process Temperatures

    NASA Astrophysics Data System (ADS)

    Mao, Jiajun

    In conventional Cu interconnect fabrication, a sputtered copper seed layer is deposited before the electrochemically deposited (ECD) copper plating step. However, as interconnect dimensions scale down, non-conformal seed layer growth and subsequent voiding of metallized structures is becoming a critical issue. With its established excellent thickness controllability and film conformality, atomic layer deposition (ALD) is becoming an attractive deposition approach for the sub-24nm fabrication regime. However, in order to achieve a smooth and continuous seed layer deposition, a low process temperature (below 100°C) is needed, given the tendency of Cu agglomeration at elevated temperature. In this research, plasma enhanced ALD (PEALD) Cu processes at low process temperature are developed using two novel precursors: Cuprum and AbaCus. The volatility and thermal stability of these two precursors are presented. Self-limiting nature of the PEALD processes are demonstrated. Key film properties including purity, resistivity, conformality, adhesion and platability are evaluated using multiple characterization techniques. In addition, film nucleation and growth of PEALD Cu at room temperature on different liner materials are studied. Via structures are employed for the investigation of film continuity on side walls. It is also shown that film conformality and platability can be improved by over saturating the plasma reactions.

  10. Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications

    SciTech Connect

    Swerts, J.; Armini, S.; Carbonell, L.; Delabie, A.; Franquet, A.; Mertens, S.; Popovici, M.; Schaekers, M.; Witters, T.; Toekei, Z.; Beyer, G.; Van Elshocht, S.; Gravey, V.; Cockburn, A.; Shah, K.; Aubuchon, J.

    2012-01-15

    Ru thin films were deposited by plasma enhanced atomic layer deposition using MethylCyclopentadienylPyrrolylRuthenium (MeCpPy)Ru and N{sub 2}/NH{sub 3} plasma. The growth characteristics have been studied on titanium nitride or tantalum nitride substrates of various thicknesses. On SiO{sub 2}, a large incubation period has been observed, which can be resolved by the use of a metal nitride layer of {approx} 0.8 nm. The growth characteristics of Ru layers deposited on ultra-thin metal nitride layers are similar to those on thick metal nitride substrates despite the fact that the metal nitride layers are not fully closed. Scaled Ru/metal nitride stacks were deposited in narrow lines down to 25 nm width. Thinning of the metal nitride does not impact the conformality of the Ru layer in the narrow lines. For the thinnest lines the Ru deposited on the side wall showed a more granular structure when compared to the bottom of the trench, which is attributed to the plasma directionality during the deposition process.

  11. ZnO nanorod growth by plasma-enhanced vapor phase transport with different growth durations

    SciTech Connect

    Kim, Chang-Yong; Oh, Hee-bong; Ryu, Hyukhyun; Yun, Jondo; Lee, Won-Jae

    2014-09-01

    In this study, the structural properties of ZnO nanostructures grown by plasma-enhanced vapor phase transport (PEVPT) were investigated. Plasma-treated oxygen gas was used as the oxygen source for the ZnO growth. The structural properties of ZnO nanostructures grown for different durations were measured by scanning electron microscopy, x-ray diffraction, and transmission electron microscopy. The authors comprehensively analyzed the growth of the ZnO nanostructures with different growth durations both with and without the use of plasma-treated oxygen gas. It was found that PEVPT has a significant influence on the growth of the ZnO nanorods. PEVPT with plasma-treated oxygen gas facilitated the generation of nucleation sites, and the resulting ZnO nanorod structures were more vertical than those prepared by conventional VPT without plasma-treated oxygen gas. As a result, the ZnO nanostructures grown using PEVPT showed improved structural properties compared to those prepared by the conventional VPT method.

  12. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5. PMID:27447839

  13. (Ti,Al,Si,C)N nanocomposite coatings synthesized by plasma-enhanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Yanfeng; Zhengxian, Li; Jihong, Du; Yunfeng, Hua; Baoyun, Wang

    2011-10-01

    Materials' surface service property could be enhanced by transition metal nitride hard coatings due to their high hardness, wear and high temperature oxidation resistance, but the higher friction coefficient (0.4-0.9) of which aroused terrible abrasion. In this work, quinternary (Ti,Al,Si,C)N hard coating 3-4 μm was synthesized at 300 °C using plasma enhanced magnetron sputtering system. It was found that the coating's columnar crystals structure was restrained obviously with the increase of C content and a non-columnar crystals growth mode was indicated at the C content of 33.5 at.%. Both the XRD and TEM showed that the (Ti,Al,Si,C)N hard coatings had unique nanocomposite structures composed of nanocrystalline and amorphous nc-(Ti,Al)(C,N)/nc-AlN/a-Si 3N 4/a-Si/a-C. However, the coatings were still super hard with the highest hardness of 41 GPa in spite of the carbon incorporation. That a-C could facilitate the graphitization process during the friction process which could improve the coating's tribological performance. Therefore, that nanocomposite (Ti,Al,Si,C)N coatings with higher hardness (>36 GPa) and a lower friction coefficient (<0.2) could be synthesized and enhance the tribological performance and surface properties profoundly.

  14. Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

    SciTech Connect

    Altuntas, Halit E-mail: biyikli@unam.bilkent.edu.tr; Ozgit-Akgun, Cagla; Donmez, Inci; Biyikli, Necmi E-mail: biyikli@unam.bilkent.edu.tr

    2015-04-21

    Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.

  15. Microwave and Quantum Chemical Study of the Hydrazino Group as Proton Donor in Intramolecular Hydrogen Bonding of (2-Fluoroethyl)hydrazine (FCH2CH2NHNH2).

    PubMed

    Møllendal, Harald; Samdal, Svein; Guillemin, Jean-Claude

    2015-09-01

    The microwave spectrum of (2-fluoroethyl)hydrazine (FCH2CH2NHNH2) was studied in the 11-123 GHz spectral region to investigate the ability of the hydrazino group to form intramolecular hydrogen bonds acting as a proton donor. This group can participate both in five-member and in six-member internal hydrogen bonds with the fluorine atom. The spectra of four conformers were assigned, and the rotational and centrifugal distortion constants of these rotameric forms were determined. Two of these conformers have five-member intramolecular hydrogen bonds, while the two other forms are without this interaction. The internal hydrogen bonds in the two hydrogen-bonded forms are assumed to be mainly electrostatic in origin because the N-H and C-F bonds are nearly parallel and the associated bond moments are antiparallel. This is the first example of a gas-phase study of a hydrazine where the hydrazino functional group acts as a proton donor in weak intramolecular hydrogen bonds. Extensive quantum chemical calculations at the B3LYP/cc-pVTZ, MP2/cc-pVTZ, and CCSD/cc-pVQZ levels of theory accompanied and guided the experimental work. These calculations predict the existence of no less than 18 conformers, spanning a CCSD internal energy range of 15.4 kJ/mol. Intramolecular hydrogen bonds are predicted to be present in seven of these conformers. Three of these forms have six-member hydrogen bonds, while four have five-member hydrogen bonds. The three lowest-energy conformers have five-member internal hydrogen bonds. The spectrum of the conformer with the lowest energy was not assigned because it has a very small dipole moment. The CCSD relative energies of the two hydrogen-bonded rotamers whose spectra were assigned are 1.04 and 1.62 kJ/mol, respectively, whereas the relative energies of the two conformers with assigned spectra and no hydrogen bonds have relative energies of 6.46 and 4.89 kJ/mol. PMID:26258892

  16. Nanocrystalline diamond thin films on titanium-6 aluminum-4 vanadium alloy temporomandibular joint prosthesis simulants by microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fries, Marc Douglas

    A course of research has been performed to assess the suitability of nanocrystal-line diamond (NCD) films on Ti-6Al-4V alloy as wear-resistant coatings in biomedical implant use. A series of temporomandibular (TMJ) joint condyle simulants were polished and acid-passivated as per ASTM F86 standard for surface preparation of implants. A 3-mum-thick coating of NCD film was deposited by microwave plasma chemical vapor deposition (MPCVD) over the hemispherical articulation surfaces of the simulants. Plasma chemistry conditions were measured and monitored by optical emission spectroscopy (OES), using hydrogen as a relative standard. The films consist of diamond grains around 20 nm in diameter embedded in an amorphous carbon matrix, free of any detectable film stress gradient. Hardness averages 65 GPa and modulus measures 600 GPa at a depth of 250 nm into the film surface. A diffuse film/substrate boundary produces a minimal film adhesion toughness (GammaC) of 158 J/m2. The mean RMS roughness is 14.6 +/- 4.2 nm, with an average peak roughness of 82.6 +/- 65.9 nm. Examination of the surface morphology reveals a porous, dendritic surface. Wear testing resulted in two failed condylar coatings out of three tests. No macroscopic delamination was found on any sample, but micron-scale film pieces broke away, exposing the substrate. Electrochemical corrosion testing shows a seven-fold reduction in corrosion rate with the application of an NCD coating as opposed to polished, passivated Ti-6Al-4V, producing a corrosion rate comparable to wrought Co-Cr-Mo. In vivo biocompatibility testing indicates that implanted NCD films did not elicit an immune response in the rabbit model, and osteointegration was apparent for both compact and trabecular bone on both NCD film and bare Ti-6Al-4V. Overall, NCD thin film material is reasonably smooth, biocompatible, and very well adhered. Wear testing indicates that this material is unacceptable for use in demanding TMJ applications without

  17. Microwave plasma CVD-grown graphene-CNT hybrids for enhanced electron field emission applications

    NASA Astrophysics Data System (ADS)

    Kaushik, Vishakha; Shukla, A. K.; Vankar, V. D.

    2014-12-01

    The growth and electron emission characteristics were investigated from a hybrid structure of multiwalled carbon nanotubes (MWCNTs) and multilayer layer graphene (MLG) deposited on silicon substrate coated with iron catalyst and an interlayer of aluminium. The hybrid structures were synthesized in a two-step process by microwave plasma-enhanced chemical vapour deposition technique. The formation of MWCNTs takes place by absorption and precipitation of carbon radicals into the catalyst particles. Thereafter, ample carbon forms MLG on tip of the MWCNTs resulting in a MLG-MWCNTs hybrid nanostructure. MLG was observed to grow branching out of the tips and sidewalls of the MWCNTs and is expected to attach by Van der Walls bonds. Transmission electron microscopy and micro-Raman spectroscopy confirmed the crystalline nature of the hybrid structures. Electron emission studies were carried out using a diode-type field emission setup. The enhancement factor was found to be ~3,500 for bare MWCNTs, ~4,070 to ~5,000 for hybrid structures and ~6,500 for N-doped MLG-MWCNTs hybrid structures. Modification in the defects structure and enhancement of emission sites are suggested to be responsible for the increase of the field emission characteristics.

  18. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Zhu, Chiyu; England, Chris; Nemanich, Robert J.

    2012-09-01

    Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al2O3 layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO2/IPL/GaN structures. The VBOs were ˜0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO2 with respect to Al2O3 and GaN, respectively.

  19. Plasma-enhanced gasification of low-grade coals for compact power plants

    NASA Astrophysics Data System (ADS)

    Uhm, Han S.; Hong, Yong C.; Shin, Dong H.; Lee, Bong J.

    2011-10-01

    A high temperature of a steam torch ensures an efficient gasification of low-grade coals, which is comparable to that of high-grade coals. Therefore, the coal gasification system energized by microwaves can serve as a moderately sized power plant due to its compact and lightweight design. This plasma power plant of low-grade coals would be useful in rural or sparsely populated areas without access to a national power grid.

  20. Plasma-enhanced gasification of low-grade coals for compact power plants

    SciTech Connect

    Uhm, Han S.; Hong, Yong C.; Shin, Dong H.; Lee, Bong J.

    2011-10-15

    A high temperature of a steam torch ensures an efficient gasification of low-grade coals, which is comparable to that of high-grade coals. Therefore, the coal gasification system energized by microwaves can serve as a moderately sized power plant due to its compact and lightweight design. This plasma power plant of low-grade coals would be useful in rural or sparsely populated areas without access to a national power grid.

  1. Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma

    NASA Astrophysics Data System (ADS)

    Han, Jeong Hwan; Lee, Byoung Kook; Jung, Eun Ae; Kim, Hyo-Suk; Kim, Seong Jun; Kim, Chang Gyoun; Chung, Taek-Mo; An, Ki-Seok

    2015-12-01

    Amorphous ZnSnOx (ZTO) films were prepared using plasma-enhanced atomic layer deposition (PEALD) in a temperature range of 100-200 °C. Metal-organic precursors of Sn(dmamp)2 (dmamp = bis(1-dimethylamino-2-methyl-2-propoxide) and diethylzinc were employed as sources of Sn and Zn, respectively, in combination with O2 plasma as a reactant. Sn levels in the ZTO films were controlled by varying the SnO2/ZnO cycle ratio from 0 to 8. According to the growth behaviour of the ZTO film by alternating SnO2 and ZnO PEALD cycles, it was observed that ZnO growth on Sn-rich ZTO film is retarded, whereas SnO2 growth is enhanced on Zn-rich ZTO film. The chemical states of the ZTO films were confirmed by X-ray photoelectron spectroscopy (XPS); the chemical compositions of the ZTO films were characterised by XPS depth profiling. Grazing-angle X-ray diffraction revealed that the PEALD ZTO films possess an amorphous structure, irrespective of Sn levels from 20 to 59 at.%. ZTO films with intermediate Sn at.% exhibited smooth surface morphology compared to binary ZnO and SnO2 films. Additionally, the step coverage of a ZTO film deposited on hole pattern with an aspect ratio of 8 and opening diameter of 110 nm was about 93%, suggesting the realisation of self-limited growth.

  2. Work function tuning of plasma-enhanced atomic layer deposited WC{sub x}N{sub y} electrodes for metal/oxide/semiconductor devices

    SciTech Connect

    Zonensain, Oren; Fadida, Sivan; Eizenberg, Moshe; Fisher, Ilanit; Gao, Juwen; Chattopadhyay, Kaushik; Harm, Greg; Mountsier, Tom; Danek, Michal

    2015-02-23

    One of the main challenges facing the integration of metals as gate electrodes in advanced MOS devices is control over the Fermi level position at the metal/dielectric interface. In this study, we demonstrate the ability to tune the effective work function (EWF) of W-based electrodes by process modifications of the atomic layer deposited (ALD) films. Tungsten carbo-nitrides (WC{sub x}N{sub y}) films were deposited via plasma-enhanced and/or thermal ALD processes using organometallic precursors. The process modifications enabled us to control the stoichiometry of the WC{sub x}N{sub y} films. Deposition in hydrogen plasma (without nitrogen based reactant) resulted in a stoichiometry of WC{sub 0.4} with primarily W-C chemical bonding, as determined by x-ray photoelectron spectroscopy. These films yielded a relatively low EWF of 4.2 ± 0.1 eV. The introduction of nitrogen based reactant to the plasma or the thermal ALD deposition resulted in a stoichiometry of WC{sub 0.1}N{sub 0.6–0.8} with predominantly W-N chemical bonding. These films produced a high EWF of 4.7 ± 0.1 eV.

  3. Filamentation-induced third-harmonic generation in air via plasma-enhanced third-order susceptibility

    SciTech Connect

    Suntsov, S.; Abdollahpour, D.; Tzortzakis, S.; Papazoglou, D. G.

    2010-03-15

    We study, both experimentally and theoretically, the underlying physics of third-harmonic generation in air by a filamented infrared femtosecond laser pulse propagating through a thin plasma channel. It is shown that the recently observed more than two-order-of-magnitude increase of the efficiency of third-harmonic generation occurs due to the plasma-enhanced third-order susceptibility. An estimate of the effective value of this susceptibility is given.

  4. Nonthermal Atmospheric Pressure Plasma Enhances Mouse Limb Bud Survival, Growth, and Elongation

    PubMed Central

    Chernets, Natalie; Zhang, Jun; Steinbeck, Marla J.; Kurpad, Deepa S.; Koyama, Eiki; Friedman, Gary

    2015-01-01

    The enhanced differentiation of mesenchymal cells into chondrocytes or osteoblasts is of paramount importance in tissue engineering and regenerative therapies. A newly emerging body of evidence demonstrates that appendage regeneration is dependent on reactive oxygen species (ROS) production and signaling. Thus, we hypothesized that mesenchymal cell stimulation by nonthermal (NT)-plasma, which produces and induces ROS, would (1) promote skeletal cell differentiation and (2) limb autopod development. Stimulation with a single treatment of NT-plasma enhanced survival, growth, and elongation of mouse limb autopods in an in vitro organ culture system. Noticeable changes included enhanced development of digit length and definition of digit separation. These changes were coordinated with enhanced Wnt signaling in the distal apical epidermal ridge (AER) and presumptive joint regions. Autopod development continued to advance for approximately 144 h in culture, seemingly overcoming the negative culture environment usually observed in this in vitro system. Real-time quantitative polymerase chain reaction analysis confirmed the up-regulation of chondrogenic transcripts. Mechanistically, NT-plasma increased the number of ROS positive cells in the dorsal epithelium, mesenchyme, and the distal tip of each phalange behind the AER, determined using dihydrorhodamine. The importance of ROS production/signaling during development was further demonstrated by the stunting of digital outgrowth when anti-oxidants were applied. Results of this study show NT-plasma initiated and amplified ROS intracellular signaling to enhance development of the autopod. Parallels between development and regeneration suggest that the potential use of NT-plasma could extend to both tissue engineering and clinical applications to enhance fracture healing, trauma repair, and bone fusion. PMID:25102046

  5. Nonthermal atmospheric pressure plasma enhances mouse limb bud survival, growth, and elongation.

    PubMed

    Chernets, Natalie; Zhang, Jun; Steinbeck, Marla J; Kurpad, Deepa S; Koyama, Eiki; Friedman, Gary; Freeman, Theresa A

    2015-01-01

    The enhanced differentiation of mesenchymal cells into chondrocytes or osteoblasts is of paramount importance in tissue engineering and regenerative therapies. A newly emerging body of evidence demonstrates that appendage regeneration is dependent on reactive oxygen species (ROS) production and signaling. Thus, we hypothesized that mesenchymal cell stimulation by nonthermal (NT)-plasma, which produces and induces ROS, would (1) promote skeletal cell differentiation and (2) limb autopod development. Stimulation with a single treatment of NT-plasma enhanced survival, growth, and elongation of mouse limb autopods in an in vitro organ culture system. Noticeable changes included enhanced development of digit length and definition of digit separation. These changes were coordinated with enhanced Wnt signaling in the distal apical epidermal ridge (AER) and presumptive joint regions. Autopod development continued to advance for approximately 144 h in culture, seemingly overcoming the negative culture environment usually observed in this in vitro system. Real-time quantitative polymerase chain reaction analysis confirmed the up-regulation of chondrogenic transcripts. Mechanistically, NT-plasma increased the number of ROS positive cells in the dorsal epithelium, mesenchyme, and the distal tip of each phalange behind the AER, determined using dihydrorhodamine. The importance of ROS production/signaling during development was further demonstrated by the stunting of digital outgrowth when anti-oxidants were applied. Results of this study show NT-plasma initiated and amplified ROS intracellular signaling to enhance development of the autopod. Parallels between development and regeneration suggest that the potential use of NT-plasma could extend to both tissue engineering and clinical applications to enhance fracture healing, trauma repair, and bone fusion. PMID:25102046

  6. Ceramic matrix composites by microwave assisted CVI

    SciTech Connect

    Currier, R.P.; Devlin, D.J.

    1993-05-01

    Chemical vapor infiltration (CVI) processes for producing continuously reinforced ceramic composites are reviewed. The potential advantages of microwave assisted CVI are noted. Recent numerical studies of microwave assisted CVI are then reviewed. These studies predict inverted thermal gradients in fibrous ceramic preforms subjected to microwave radiation and suggest processing strategies for achieving uniformly dense composites. Comparisons are made to experimental results obtained using silicon based composite systems. The importance of microwave-material interactions is stressed. In particular, emphasis is placed on the role played by the relative ability of fiber and matrix to dissipate microwave energy. Results suggest that microwave induced inverted gradients can in fact be exploited using the CVI technique to promote inside-out densification.

  7. Ceramic matrix composites by microwave assisted CVI

    SciTech Connect

    Currier, R.P.; Devlin, D.J.

    1993-01-01

    Chemical vapor infiltration (CVI) processes for producing continuously reinforced ceramic composites are reviewed. The potential advantages of microwave assisted CVI are noted. Recent numerical studies of microwave assisted CVI are then reviewed. These studies predict inverted thermal gradients in fibrous ceramic preforms subjected to microwave radiation and suggest processing strategies for achieving uniformly dense composites. Comparisons are made to experimental results obtained using silicon based composite systems. The importance of microwave-material interactions is stressed. In particular, emphasis is placed on the role played by the relative ability of fiber and matrix to dissipate microwave energy. Results suggest that microwave induced inverted gradients can in fact be exploited using the CVI technique to promote inside-out densification.

  8. Microwave spectra of some volatile organic compounds

    NASA Technical Reports Server (NTRS)

    White, W. F.

    1975-01-01

    A computer-controlled microwave (MRR) spectrometer was used to catalog reference spectra for chemical analysis. Tables of absorption frequency, peak absorption intensity, and integrated intensity are included for 26 volatile organic compounds, all but one of which contain oxygen.

  9. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  10. Plasma-enhanced atomic layer deposition zinc oxide for multifunctional thin film electronics

    NASA Astrophysics Data System (ADS)

    Mourey, Devin A.

    A novel, weak oxidant, plasma-enhanced atomic layer deposition (PEALD) process has been used to fabricate stable, high mobility ZnO thin film transistors (TFTs) and fast circuits on glass and polyimide substrates at 200°C. Weak oxidant PEALD provides a simple, fast deposition process which results in uniform, conformal coatings and highly crystalline, dense ZnO thin films. These films and resulting devices have been compared with those prepared by spatial atomic layer deposition (SALD) throughout the work. Both PEALD and SALD ZnO TFTs have high field-effect mobility (>20 cm 2/V·s) and devices with ALD Al2O3 passivation can have excellent bias stress stability. Temperature dependent measurements of PEALD ZnO TFTs revealed a mobility activation energy < 5 meV and can be described using a simple percolation model with a Gaussian distribution of near-conduction band barriers. Interestingly, both PEALD and SALD devices operate with mobility > 1 cm2/V·s even at temperatures < 10 K. The effects of high energy irradiation have also been investigated. Devices exposed to 1 MGy of gamma irradiation showed small threshold voltage shifts (<2 V) which were fully recoverable with short (1 min) low-temperature (200°C) anneals. ZnO TFTs exhibit a range of non-ideal behavior which has direct implications on how important parameters such as mobility and threshold voltage are quantified. For example, the accumulation-dependent mobility and contact effects can lead to significant overestimations in mobility. It is also found that self-heating plays and important role in the non-ideal behavior of oxide TFTs on low thermal conductivity substrates. In particular, the output conductance and a high current device runaway breakdown effect can be directly ascribed to self-heating. Additionally, a variety of simple ZnO circuits on glass and flexible substrates were demonstrated. A backside exposure process was used to form gate-self-aligned structures with reduced parasitic capacitance and

  11. Microwave processing of ceramics

    SciTech Connect

    Katz, J.D.

    1989-01-01

    This paper discusses the following topics on microwave processing of ceramics: Microwave-material interactions; anticipated advantage of microwave sintering; ceramic sintering; and ceramic joining. 24 refs., 4 figs. (LSP)

  12. Low-dielectric-constant fluorinated diamond-like carbon thin films by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yi, Jeong Woo

    Fluorinated amorphous carbon (a-C:F) thin films are developed for a low dielectric constant interlayer dielectric material from hexafluorobenze (C 6F6) or 1,1,1,2-tetrafluoroethane (FCH2CF 4) as the source gas and argon as the diluent gas in an asymmetric capacitively coupled rf (radio frequency) plasma reactor and an inductively coupled plasma reactor. Effects of input rf power, fluorination, applied bias voltage and post annealing on the properties of a-C:F films are investigated. For depositing a-C:F films from highly diluted C6F6 (3%) and argon (97%) in the capacitively rf plasma reactor at 150 mTorr, the dielectric constant of the film increases from 2.0 to 2.8 as the rf power is increased from 10 W to 70 W, while the optical energy gap decreases from 2.6 eV to 1.9 eV and the transparency in a ultra-violet range is degraded. At input power of 100 W, the deposited film exhibits high residual stress of 40 MPa and easily peeled off by a Scotch tape test. This is due to high self-bias voltage (-230 V) developed at the substrate holder during deposition. When depositing amorphous carbon films from tetrafluoroethane (TFE) and methane in the capacitively coupled plasma reactor, the incorporation of fluorine in the film is increased with increasing TFE fraction in the feed gas mixture. The dielectric constant of the a-C:F film deposited from pure TFE is as low as 2.3, but the film exhibits poor thermal stability while a-C:H (diamond-like carbon) film deposited from pure methane has a dielectric constant of 3.8 and shows good thermal stability up to 400°C. As the TFE content in the feed is increased, the dielectric constant and the refractive index decrease while the transparency of the film is enhanced significantly. When depositing a-C:F films from C6F6 (4 sccm) and Ar (5 sccm) in the inductively coupled rf plasma reactor, the bias voltage (from a separate 100 KHz source) applied to the substrate holder affects the film properties significantly. As the negative bias voltage is increased from 0 V to 200 V, the dielectric constant of the film increases from 2.1 to 2.6, and the degree of graphitization in the film is enhanced. When no bias voltage is applied, interface traps are formed between the film and the silicon substrate at a significant level, whereas a high bias voltage of -200 V degrades the film quality---the film exhibits high water absorption and high leakage current. Post annealing in N2 or H2 enhances the electrical properties of a-C:F films. At annealing temperatures greater than 300°C, the films exhibit few defects and high degree of crosslinking. Annealing in H2 environment is effective in decreasing the interface traps and the charge density in the film. Annealing in N2 environment is effective in eliminating the water absorption by the film is prevented and in enhancing the adhesion of the film to glass substrates. To deposit low dielectric constant fluorinated amorphous carbon thin films, low rf powers should used in capacitively coupled rf plasma reactors or low bias voltages should be used in inductively coupled plasma reactors. Post annealing at 400°C in a H2 environment is recommended for improving film quality.

  13. Novel Growth Mechanism of Low-Temperature-Grown Graphene by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

    NASA Astrophysics Data System (ADS)

    Hsu, Chen-Chih; Boyd, David; Lin, Wei-Hisang; Yeh, Nai-Chang

    2014-03-01

    We show a one-step method that employs PECVD for rapidly producing superior quality, large-area (~ 1 cm2) , monolayer graphene on Cu at low temperature (LT). The key to our approach is that deposition of high-quality graphene on Cu can be achieved through balancing carbon deposition by methyl radicals with etching of amorphous carbon by atomic hydrogen, while concurrently preparing the Cu surface for growth by cyano radicals. We find that removal of Cu always accompanies graphene growth, as evidenced by the presence of Cu deposits on the quartz tube and sample holder for each successful growth. We are also able to fabricate monolayer graphene by PECVD growth in 3 minutes. Even if the growth time is increased to 20 minutes, we still observe monolayer instead of multilayer graphene, suggesting that the growth mechanism differs from high-temperature CVD grown graphene. Electrical mobility determined by the field-effect-transistor configuration exhibits consistently high values, up to 60,000 cm2/V-s on BN at 300K, exceeding the best values reported for thermal-CVD graphene on BN. Our findings suggest a promising pathway to large-scale, superior-quality and one-step inexpensive graphene fabrication for scientific research and technological applications. Work supported by NSF under the IQIM at Caltech.

  14. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    PubMed

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase. PMID:25254307

  15. Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition

    SciTech Connect

    Laube, J. Gutsch, S.; Hiller, D.; Zacharias, M.; Bruns, M.; Kübel, C.; Weiss, C.

    2014-12-14

    This paper reports the growth of silicon nanocrystals (SiNCs) from SiH4–O{sub 2} plasma chemistry. The formation of an oxynitride was avoided by using O{sub 2} instead of the widely used N{sub 2}O as precursor. X-ray photoelectron spectroscopy is used to prove the absence of nitrogen in the layers and determine the film stoichiometry. It is shown that the Si rich film growth is achieved via non-equilibrium deposition that resembles a interphase clusters mixture model. Photoluminescence and Fourier transformed infrared spectroscopy are used to monitor the formation process of the SiNCs, to reveal that the phase separation is completed at lower temperatures as for SiNCs based on oxynitrides. Additionally, transmission electron microscopy proves that the SiNC sizes are well controllable by superlattice configuration, and as a result, the optical emission band of the Si nanocrystal can be tuned over a wide range.

  16. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

    PubMed

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  17. Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide

    NASA Astrophysics Data System (ADS)

    Fryauf, David M.; Phillips, Andrew C.; Kobayashi, Nobuhiko P.

    2015-10-01

    Astronomical telescopes continue to demand high-endurance high-reflectivity silver (Ag) mirrors that can withstand years of exposure in Earth-based observatory environments. We present promising results of improved Ag mirror robustness using plasma-enhanced atomic layer deposition (PEALD) of aluminum oxide (AlOx) as a top barrier layer. Transparent AlOx is suitable for many optical applications; therefore, it has been the initial material of choice for this study. Two coating recipes developed with electron beam ion-assisted deposition (e-beam IAD) of materials including yttrium fluoride, titanium nitride, oxides of yttrium, tantalum, and silicon are used to provide variations in basic Ag mirror structures to compare the endurance of reactive e-beam IAD barriers with PEALD barriers. Samples undergo high temperature/high humidity environmental testing in a controlled environment of 80% humidity at 80°C for 10 days. Environmental testing shows visible results suggesting that the PEALD AlOx barrier offers robust protection against chemical corrosion and moisture permeation. Ag mirror structures were further characterized by reflectivity/absorption before and after deposition of AlOx barriers.

  18. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    NASA Astrophysics Data System (ADS)

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-05-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

  19. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    PubMed Central

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca i Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  20. Microwave treatment of vulcanized rubber

    DOEpatents

    Wicks, George G.; Schulz, Rebecca L.; Clark, David E.; Folz, Diane C.

    2002-07-16

    A process and resulting product is provided in which a vulcanized solid particulate, such as vulcanized crumb rubber, has select chemical bonds broken by microwave radiation. The direct application of microwaves in combination with uniform heating of the crumb rubber renders the treated crumb rubber more suitable for use in new rubber formulations. As a result, larger particle sizes and/or loading levels of the treated crumb rubber can be used in new rubber mixtures to produce recycled composite products with good properties.

  1. Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements.

    PubMed

    Melo, Luis; Burton, Geoff; Kubik, Philip; Wild, Peter

    2016-04-01

    Long period gratings (LPGs) are coated with hafnium oxide using plasma-enhanced atomic layer deposition (PEALD) to increase the sensitivity of these devices to the refractive index of the surrounding medium. PEALD allows deposition at low temperatures which reduces thermal degradation of UV-written LPGs. Depositions targeting three different coating thicknesses are investigated: 30 nm, 50 nm and 70 nm. Coating thickness measurements taken by scanning electron microscopy of the optical fibers confirm deposition of uniform coatings. The performance of the coated LPGs shows that deposition of hafnium oxide on LPGs induces two-step transition behavior of the cladding modes. PMID:27137052

  2. Microwave-assisted synthesis of organics and nanomaterials

    EPA Science Inventory

    Microwave-assisted chemistry techniques and greener reaction media are dramatically reducing chemical waste and reaction times in several organic transformations and material synthesis. This presentation summarizes author’s own experience in developing MW-assisted chemical proces...

  3. Emissions from cooking microwave popcorn.

    PubMed

    Rosati, Jacky A; Krebs, Kenneth A; Liu, Xiaoyu

    2007-01-01

    This study characterized chemicals released into a chamber in the process of cooking microwave popcorn. Seventeen types of microwave popcorn from eight different brands were studied. The work proceeded in two phases: phase one investigated chemicals emitted during popping and opening, phase two investigated chemicals emitted at discrete intervals from 0-40 minutes post-pop opening. The research was performed using a microwave oven enclosed in a chamber with ports for air sampling of particulate matter (PM) and volatile organic compounds (VOCs). VOCs in the air samples were identified and quantified using gas chromatography/mass spectrometry (GC/MS). PM was characterized using both an aerodynamic particle sizer (APS) and a scanning mobility particle sizer (SMPS) to cover a full range of emitted sizes. The compounds measured during popping and opening included butter flavoring components such as diacetyl, butyric acid, acetoin, propylene glycol, 2-nonanone, and triacetin and bag components such as p-xylene and perfluorinated alcohol 8:2 telomer. The greatest chemical quantity is emitted when the bag is opened post-popping; more than 80% of the total chemical emissions occur at this time. PMID:17987444

  4. Compact Microwave Fourier Spectrum Analyzer

    NASA Technical Reports Server (NTRS)

    Savchenkov, Anatoliy; Matsko, Andrey; Strekalov, Dmitry

    2009-01-01

    A compact photonic microwave Fourier spectrum analyzer [a Fourier-transform microwave spectrometer, (FTMWS)] with no moving parts has been proposed for use in remote sensing of weak, natural microwave emissions from the surfaces and atmospheres of planets to enable remote analysis and determination of chemical composition and abundances of critical molecular constituents in space. The instrument is based on a Bessel beam (light modes with non-zero angular momenta) fiber-optic elements. It features low power consumption, low mass, and high resolution, without a need for any cryogenics, beyond what is achievable by the current state-of-the-art in space instruments. The instrument can also be used in a wide-band scatterometer mode in active radar systems.

  5. Phase Transition and Microwave Dielectric Properties of Low-Temperature Sintered BiCu2VO6 Ceramic and its Chemical Compatibility with Silver

    NASA Astrophysics Data System (ADS)

    Li, Chunchun; Xiang, Huaicheng; Fang, Liang

    2016-01-01

    In this work, a low-firing microwave dielectric ceramic BiCu2VO6 with monoclinic structure was prepared through a solid state reaction method. Dense ceramic could be obtained when sintered at 740°C with a relative density about 96.7%. A diffusive phase transition was observed from the temperature dependence of the relative permittivity and loss tangent. The best sintered sample at 740°C exhibited the optimum microwave dielectric properties with a relative permittivity ~22.7, a quality factor ~11,960 GHz (at 11.0 GHz), and a temperature coefficient of resonant frequency of -17.2 ppm/°C. From the x-ray diffraction, backscattered electron imaging results of the cofired sample with 20 wt.% silver, the BiCu2VO6 ceramic was found not to react with Ag at 740°C. It might be promising for the low-temperature cofired ceramics and dielectric resonator applications.

  6. A Microwave Thruster for Spacecraft Propulsion

    SciTech Connect

    Chiravalle, Vincent P

    2012-07-23

    This presentation describes how a microwave thruster can be used for spacecraft propulsion. A microwave thruster is part of a larger class of electric propulsion devices that have higher specific impulse and lower thrust than conventional chemical rocket engines. Examples of electric propulsion devices are given in this presentation and it is shown how these devices have been used to accomplish two recent space missions. The microwave thruster is then described and it is explained how the thrust and specific impulse of the thruster can be measured. Calculations of the gas temperature and plasma properties in the microwave thruster are discussed. In addition a potential mission for the microwave thruster involving the orbit raising of a space station is explored.

  7. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect

    Van Bui, Hao Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y.

    2015-01-01

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30 nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  8. Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

    SciTech Connect

    Shin, Yu-Ri; Kwack, Won-Sub; Park, Yun Chang; Kim, Jin-Hyock; Shin, Seung-Yong; Moon, Kyoung Il; Lee, Hyung-Woo; Kwon, Se-Hun

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Ru-AlN thin films were grown by plasma-enhanced atomic layer deposition (PEALD). Black-Right-Pointing-Pointer Structural properties were systematically investigated by XRD, BF-STEM and EDX. Black-Right-Pointing-Pointer A drastic decrease in resistivity was due to the microstructural change of the films. -- Abstract: Ruthenium-aluminum-nitride (Ru-AlN) thin films were grown by plasma-enhanced atomic layer deposition (PEALD) at 300 Degree-Sign C. The Ru intermixing ratio of Ru-AlN thin films was controlled by the number of Ru unit cycles, while the number of AlN unit cycles was fixed to one cycle. The electrical resistivity of Ru-AlN thin film decreased with increasing the Ru intermixing ratio, but a drastic decrease in electrical resistivity was observed when the Ru intermixing ratio was around 0.58-0.78. Bright-field scanning transmission electron microscope (BF-STEM) and energy-dispersive X-ray spectroscopy (EDX) element mapping analysis revealed that the electrical resistivity of Ru-AlN thin film was strongly dependent on the microstructures as well as on the Ru intermixing ratio. Although the electrical resistivity of Ru-AlN thin films decreased with increasing the Ru intermixing ratio, a drastic decrease in electrical resistivity occurred where the electrical paths formed as a result of the coalescence of Ru nanocrystals.

  9. Microwave combustion and sintering without isostatic pressure

    SciTech Connect

    Ebadian, M.A.

    1998-01-01

    In recent years interest has grown rapidly in the application of microwave energy to the processing of ceramics, composites, polymers, and other materials. Advances in the understanding of microwave/materials interactions will facilitate the production of new ceramic materials with superior mechanical properties. One application of particular interest is the use of microwave energy for the mobilization of uranium for subsequent redeposition. Phase III (FY98) will focus on the microwave assisted chemical vapor infiltration tests for mobilization and redeposition of radioactive species in the mixed sludge waste. Uranium hexachloride and uranium (IV) borohydride are volatile compounds for which the chemical vapor infiltration procedure might be developed for the separation of uranium. Microwave heating characterized by an inverse temperature profile within a preformed ceramic matrix will be utilized for CVI using a carrier gas. Matrix deposition is expected to commence from the inside of the sample where the highest temperature is present. The preform matrix materials, which include aluminosilicate based ceramics and silicon carbide based ceramics, are all amenable to extreme volume reduction, densification, and vitrification. Important parameters of microwave sintering such as frequency, power requirement, soaking temperature, and holding time will be investigated to optimize process conditions for the volatilization of uranyl species using a reactive carrier gas in a microwave chamber.

  10. Plasma-Enhanced Combustion of Hydrocarbon Fuels and Fuel Blends Using Nanosecond Pulsed Discharges

    SciTech Connect

    Cappelli, Mark; Mungal, M Godfrey

    2014-10-28

    This project had as its goals the study of fundamental physical and chemical processes relevant to the sustained premixed and non-premixed jet ignition/combustion of low grade fuels or fuels under adverse flow conditions using non-equilibrium pulsed nanosecond discharges.

  11. Diffuse Microwave Emission Survey

    NASA Astrophysics Data System (ADS)

    Shafer, R. A.; Mather, J.; Kogut, A.; Fixsen, D. J.; Seiffert, M.; Lubin, P. M.; Levin, S. M.

    1996-12-01

    The Diffuse Microwave Emission Survey (DIMES) is a mission concept selected by NASA in 1995 to answer fundamental questions about the content and history of the universe. DIMES will use a set of absolutely calibrated cryogenic radiometers from a space platform to measure the frequency spectrum of the cosmic microwave background (CMB) at wavelengths 15--0.3 cm (frequency 2--100 GHz) to precision 0.1 mK or better. Measurements at centimeter wavelengths probe different physical processes than the COBE-FIRAS spectra at shorter wavelengths, and complement the anisotropy measurements from DMR, balloon and ground-based instruments, and the planned MAP and COBRAS/SAMBA satellites. DIMES will observe the free-free signal from early photoionization to establish the precise epoch of structure formation, and will measure or limit energy release at redshift 10(4) < z < 10(7) by measuring the chemical potential distortion of the CMB spectrum. Both are likely under current cosmological theory and allowed by current measurement limits; even an upper limit at the expected sensitivity 10(-5) MJy/sr will place important constraints on the matter content, structure, and evolution of the universe. Detecting these distortions or showing that they do not exist constitutes the last frontier of CMB observations.

  12. Atmospheric-air plasma enhances coating of different lubricating agents on polyester fiber

    NASA Astrophysics Data System (ADS)

    Ebrahimi, I.; Kiumarsi, A.; Parvinzadeh Gashti, M.; Rashidian, R.; Norouzi, M. Hossein

    2011-10-01

    This research work involves the plasma treatment of polyethylene terephthalate fiber to improve performance of various ionic lubricating agents. To do this, polyester fabric was pre-scoured with detergent, treated with atmospheric-air plasma and then coated with anionic, cationic and nonionic emulsions. Chemical and physical properties of samples were investigated by the use of Fourier transform infrared spectroscopy (FTIR), bending lengths (BL), wrinkle recovery angles (WRA), fiber friction coefficient analysis (FFCA), moisture absorbency (MA), scanning electron microscopy (SEM) and reflectance spectroscopy (RS). Study on chemical properties of fibers revealed that the plasma pretreatment modifies the surface of fibers and increases the reactivity of substrate toward various ionic emulsions. Physical properties of textiles indicated that the combination of plasma and emulsion treatments on polyester can improve crease resistant, drapeability and water repellency due to uniform coating of various emulsions on surface of textiles.

  13. Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2-PVA nanocomposites as seed layer

    NASA Astrophysics Data System (ADS)

    Hassan, J. J.; Mahdi, M. A.; Yusof, Y.; Abu-Hassan, H.; Hassan, Z.; Al-Attar, H. A.; Monkman, A. P.

    2013-03-01

    Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we report the growth of high-quality, vertically aligned ZnO nanorods directly on a p-type GaN substrate, with no interface layer, by microwave-assisted chemical bath deposition using a polyvinyl alcohol (PVA)-Zn(OH)2 nanocomposites as the seed layer. X-ray diffraction and field-emission scanning electron microscopy confirmed the high quality of the nanorods in addition to the narrow and high-intensity UV peak of the photoluminescence spectrum. Three different filling insulator materials, poly methyl methacrylate (PMMA), SiO2, and PVA, were used to fabricate n-ZnO nanorod/p-GaN thin film LED structures. The electroluminescence (EL) properties for these three devices showed different emission peaks, which mainly originated from the recombination of free carriers at the two sides of the heterojunction. All devices showed excellent LED performance under forward and reverse bias; the PMMA device showed EL peaks in the UV-blue region, and the SiO2 device displayed EL peaks in the UV and green regions, respectively.

  14. Controlled, defect-guided, metal-nanoparticle incorporation onto MoS2 via chemical and microwave routes: electrical, thermal, and structural properties.

    PubMed

    Sreeprasad, T S; Nguyen, Phong; Kim, Namhoon; Berry, Vikas

    2013-09-11

    Ultrathin (0.3-3 nm) metal dichalcogenides exhibit confinement of carriers, evolution of band-structure and photophysical properties with thickness, high on/off rectification (in MoS2, WS2, and so forth) and high thermal absorption. Here, we leverage the stable sulfur/nobel-metal binding to incorporate highly capacitive gold nanoparticles (Au NPs) onto MoS2 to raise the effective gate-voltage by an order of magnitude. Functionalization is achieved via both diffusion limited aggregation and instantaneous reaction arresting (using microwaves) with selective deposition on crystallographic edges (with 60° displacement). The electrical, thermal, and Raman studies show a highly capacitive interaction between Au NP and MoS2 flakes (CAu-MoS2 = 2.17 μF/cm(2)), a low Schottky barrier (14.52 meV), a reduced carrier-transport thermal-barrier (253 to 44.18 meV after Au NP functionalization), and increased thermal conductivity (from 15 to 23 W/mK post NP deposition). The process could be employed to attach electrodes to heterostructures of graphene and MoS2, where a gold film could be grown to act as an electron-tunneling gate-electrode connected to MoS2. PMID:23927716

  15. Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films

    SciTech Connect

    Claassen, W.A.P.

    1987-03-01

    The authors have studied the influence of different deposition conditions on the mechanical stress of silicon nitride and silicon oxynitride layers formed by plasma-enhanced deposition onto silicon substrates. It appears that the mechanical stress of the as-deposited silicon (oxy)nitride layer is a combined effect of the extent of ion bombardment and the deposition temperature on the hydrogen desorption rate. Deposited films show a tensile stress character when the hydrogen desorption rate is thermally controlled, whereas in the case of an ion-bombardment-controlled hydrogen desorption rate the deposited films have a compressive stress. It is also shown that due to annealing at temperatures above the deposition temperature the films are densified as a result of hydrogen desorption and cross-linking.

  16. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    SciTech Connect

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-07

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10{sup 3}, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  17. Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Zhang, Qilong; Yang, Hui; Wu, Huayu; Zhou, Juehui; Hu, Liang

    2014-10-01

    AlN thin films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate the resistive switching (RS) behavior. The bipolar RS properties were observed in the Cu/PEALD-AlN/Pt devices, which are induced upon the formation/disruption of Cu conducting filaments, as confirmed by the temperature dependent resistances relationships at different resistance states. The resistance ratio of the high and low resistance states (HRS/LRS) is 102-105. The dominant conduction mechanisms at HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. This study demonstrated that the PEALD-AlN films have a great potential for the applications in high-density resistance random access memory.

  18. Multilayered Graphene in Microwaves

    NASA Astrophysics Data System (ADS)

    Kuzhir, P.; Volynets, N.; Maksimenko, S.; Kaplas, T.; Svirko, Yu.

    2013-05-01

    We report on the experimental study of electromagnetic (EM) properties of multilayered graphene in Ka-band synthesized by catalytic chemical vapor deposition (CVD) process in between nanometrically thin Cu catalyst film and dielectric (SiO2) substrate. The quality of the produced multilayered graphene samples were monitored by Raman spectroscopy. The thickness of graphene films was controlled by atomic force microscopy (AFM) and was found to be a few nanometers (up to 5 nm). We discovered, that the fabricated graphene provided remarkably high EM shielding efficiency caused by absorption losses at the level of 35-43% of incident power. Being highly conductive at room temperature, multi-layer graphene emerges as a promising material for manufacturing ultrathin microwave coatings to be used in aerospace applications.

  19. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    SciTech Connect

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi

    2014-12-08

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  20. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    NASA Astrophysics Data System (ADS)

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi; Koizumi, Satoshi

    2014-12-01

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  1. Plasma-enhanced CVD preparation of isotopes of group IV and VI elements

    NASA Astrophysics Data System (ADS)

    Sennikov, P. G.; Kornev, R. A.

    2016-03-01

    The plasma-chemical reduction was studied experimentally of molybdenum, sulfur and germanium fluorides with different isotopic composition by hydrogen in plasmas sustained by inductively coupled (IC) and capacitively-coupled (CC) RF discharges. The emission spectra of plasmas recorded under different experimental conditions are discussed. Reaction mechanisms are proposed. In the case of 98MoF6 reduction in CCP, the combined radical-atomic mechanism including intermediate MoF3 resulting in bulk and powder 98Mo formation was established. In the emission spectrum of the 32SF6 + H2 system in ICP at 0.2 Torr, only lines assigned to SiF2, SiF and F2 * originating from the decomposition of 32SF6 and a fast reaction of its products with the reactor's quartz walls were observed. Due to this etching process, the yield of 32S was moderate. Increasing the pressure in the reactor above 1 Torr resulted in an increase of the 32S yield. The mechanism of 72GeF4 reduction depends on the pressure and plasma type. At 0.25 Torr in ICP, a 72Ge deposit was formed via the 72GeF radical; however, at 3.5 Torr in CCP, the mechanism changed to a molecular one. Results of the study of the structure and the isotopic and chemical purity of isotope samples obtained are briefly presented.

  2. Microwave Radiometer (MWR) Handbook

    SciTech Connect

    Morris, VR

    2006-08-01

    The Microwave Radiometer (MWR) provides time-series measurements of column-integrated amounts of water vapor and liquid water. The instrument itself is essentially a sensitive microwave receiver. That is, it is tuned to measure the microwave emissions of the vapor and liquid water molecules in the atmosphere at specific frequencies.

  3. Microwave Workshop for Windows.

    ERIC Educational Resources Information Center

    White, Colin

    1998-01-01

    "Microwave Workshop for Windows" consists of three programs that act as teaching aid and provide a circuit design utility within the field of microwave engineering. The first program is a computer representation of a graphical design tool; the second is an accurate visual and analytical representation of a microwave test bench; the third is a more…

  4. ENVIRONMENTALLY FRIENDLIER ALTERNATIVES TO ORGANIC SYNTHESIS USING MICROWAVES

    EPA Science Inventory

    Microwave irradiation has been used for a variety of organic transformations wherein chemical reactions are expedited because of selective adsorption of microwave (MW) energy by polar molecules, non-polar molecules being inert to the MW dielectric loss. The MW application under s...

  5. CONTINUOUS MICROWAVE REACTORS FOR ORGANIC SYNTHESIS: HYDRODECHLORINATION AND HYDROLYSIS

    EPA Science Inventory

    Microwave heating has been sought as a convenient way of enhancing chemical processes. The advantages of microwave heating, such as selective direct heating of materials of a catalytic site, minimized fouling on hot surfaces, process simplicity, rapid startup, as well as the poss...

  6. GREENER APPROACH TO EFFICIENT ORGANIC SYNTHESES USING MICROWAVES

    EPA Science Inventory

    Microwave irradiation has been used for a variety of organic transformations wherein chemical reactions are expedited because of selective adsorption of microwave (MW) energy by polar molecules, non-polar molecules being inert to the MW dielectric loss. The MW application under s...

  7. CONTINUOUS FLOW MICROWAVE REACTORS FOR ORGANIC SYNTHESIS: HYDRODECHLORINATION, HETROCYCLIZATION, ISOMERIZATION

    EPA Science Inventory

    Microwave heating has been sought as a convenient way of enhancing chemical processes. The advantages of microwave heating, such as selective direct heating of materials of a catalytic site, minimized fouling on hot surfaces, process simplicity, rapid startup, as well as the pos...

  8. Medical applications of microwaves

    NASA Astrophysics Data System (ADS)

    Vrba, Jan; Lapes, M.

    2004-04-01

    Medical applications of microwaves (i.e. a possibility to use microwave energy and/or microwave technique and technology for therapeutical purposes) are a quite new and a very rapidly developing field. Microwave thermotherapy is being used in medicine for the cancer treatment and treatment of some other diseases since early eighties. In this contribution we would like to offer general overview of present activities in the Czech Republic, i.e. clinical applications and results, technical aspects of thermo therapeutic equipment and last but not least, prospective diagnostics based on microwave principals ant technology and instrumentation.

  9. Microwave sintering of ceramics

    SciTech Connect

    Snyder, W.B.

    1989-01-01

    Successful adaptation of microwave heating to the densification of ceramic materials require a marriage of microwave and materials technologies. Using an interdisciplinary team of microwave and materials engineers, we have successfully demonstrated the ability to density ceramic materials over a wide range of temperatures. Microstructural evolution during microwave sintering has been found to be significantly different from that observed in conventional sintering. Our results and those of others indicate that microwave sintering has the potential to fabricate components to near net shape with mechanical properties equivalent to hot pressed or hot isostatically pressed material. 6 refs., 11 figs.

  10. Plasma - enhanced dispersion of metal and ceramic nanoparticles in polymer nanocomposite films

    NASA Astrophysics Data System (ADS)

    Maguire, Paul; Liu, Yazi; Askari, Sadegh; Patel, Jenish; Macia-Montero, Manuel; Mitra, Somak; Zhang, Richao; Sun, Dan; Mariotti, Davide

    2015-09-01

    In this work we demonstrate a facile method to synthesize a nanoparticle/PEDOT:PSS hybrid nanocomposite material in aqueous solution through atmospheric pressure direct current (DC) plasma processing at room temperature. Both metal (Au) and ceramic (TiO2) nanoparticle composite films have been fabricated. Nanoparticle dispersion is enhanced considerable and remains stable. TiO2/polymer hybrid nanoparticles with a distinct core shell structure have been obtained. Increased nanoparticle/PEDOT:PSS nanocomposite electrical conductivity has been observed. The improvement in nanocomposite properties is due to the enhanced dispersion and stability in liquid polymer of microplasma processed Au or TiO2 nanoparticles. Both plasma induced surface charge and nanoparticle surface termination with specific plasma chemical species are thought to provide an enhanced barrier to nanoparticle agglomeration and promote nanoparticle-polymer bonding. This is expected to have a significant benefit in materials processing with inorganic nanoparticles for applications in energy storage, photocatalysis and biomedical sensors. Engineering and Physical Sciences Research Council (EPSRC: EP/K006088/1, EP/K006142, Nos. EP/K022237/1).

  11. Optically Transparent Microwave Polarizer Based On Quasi-Metallic Graphene.

    PubMed

    Grande, Marco; Bianco, Giuseppe Valerio; Vincenti, Maria Antonietta; de Ceglia, Domenico; Capezzuto, Pio; Scalora, Michael; D'Orazio, Antonella; Bruno, Giovanni

    2015-01-01

    In this paper, we report on the engineering and the realization of optically transparent graphene-based microwave devices using Chemical Vapour Deposition (CVD) graphene whose sheet resistance may be tailored down to values below 30 Ω/sq. In particular, we show that the process was successfully used to realize and characterize a simple, optically transparent graphene-based wire-grid polarizer at microwave frequencies (X band). The availability of graphene operating in a quasi-metallic region may allow the integration of graphene layers in several microwave components, thus leading to the realization of fully transparent (and flexible) microwave devices. PMID:26603112

  12. Microwave Brightness Of Land Surfaces From Outer Space

    NASA Technical Reports Server (NTRS)

    Kerr, Yann H.; Njoku, Eni G.

    1991-01-01

    Mathematical model approximates microwave radiation emitted by land surfaces traveling to microwave radiometer in outer space. Applied to measurements made by Scanning Multichannel Microwave Radiometer (SMMR). Developed for interpretation of microwave imagery of Earth to obtain distributions of various chemical, physical, and biological characteristics across its surface. Intended primarily for use in mapping moisture content of soil and fraction of Earth covered by vegetation. Advanced Very-High-Resolution Radiometer (AVHRR), provides additional information on vegetative cover, thereby making possible retrieval of soil-moisture values from SMMR measurements. Possible to monitor changes of land surface during intervals of 5 to 10 years, providing significant data for mathematical models of evolution of climate.

  13. Optically Transparent Microwave Polarizer Based On Quasi-Metallic Graphene

    PubMed Central

    Grande, Marco; Bianco, Giuseppe Valerio; Vincenti, Maria Antonietta; de Ceglia, Domenico; Capezzuto, Pio; Scalora, Michael; D’Orazio, Antonella; Bruno, Giovanni

    2015-01-01

    In this paper, we report on the engineering and the realization of optically transparent graphene-based microwave devices using Chemical Vapour Deposition (CVD) graphene whose sheet resistance may be tailored down to values below 30 Ω/sq. In particular, we show that the process was successfully used to realize and characterize a simple, optically transparent graphene-based wire-grid polarizer at microwave frequencies (X band). The availability of graphene operating in a quasi-metallic region may allow the integration of graphene layers in several microwave components, thus leading to the realization of fully transparent (and flexible) microwave devices. PMID:26603112

  14. Determination of 13 endocrine disrupting chemicals in environmental solid samples using microwave-assisted solvent extraction and continuous solid-phase extraction followed by gas chromatography-mass spectrometry.

    PubMed

    Azzouz, Abdelmonaim; Ballesteros, Evaristo

    2016-01-01

    Soil can contain large numbers of endocrine disrupting chemicals (EDCs). The varied physicochemical properties of EDCs constitute a great challenge to their determination in this type of environmental matrix. In this work, an analytical method was developed for the simultaneous determination of various classes of EDCs, including parabens, alkylphenols, phenylphenols, bisphenol A, and triclosan, in soils, sediments, and sewage sludge. The method uses microwave-assisted extraction (MAE) in combination with continuous solid-phase extraction for determination by gas chromatography-mass spectrometry. A systematic comparison of the MAE results with those of ultrasound-assisted and Soxhlet extraction showed MAE to provide the highest extraction efficiency (close to 100%) in the shortest extraction time (3 min). The proposed method provides a linear response over the range 2.0 - 5000 ng kg(-1) and features limits of detection from 0.5 to 4.5 ng kg(-1) depending on the properties of the EDC. The method was successfully applied to the determination of target compounds in agricultural soils, pond and river sediments, and sewage sludge. The sewage sludge samples were found to contain all target compounds except benzylparaben at concentration levels from 36 to 164 ng kg(-1). By contrast, the other types of samples contained fewer EDCs and at lower concentrations (5.6 - 84 ng kg(-1)). PMID:26475722

  15. Microwave Plasma Chemical Vapor Deposition of Carbon Coatings on LiNi1/3Co1/3Mn1/3O2 for Li-Ion Battery Composite Cathodes

    SciTech Connect

    Doeff, M.M.; Kostecki, R.; Marcinek, M.; Wilcoc, J.D.

    2008-12-10

    In this paper, we report results of a novel synthesis method of thin film conductive carbon coatings on LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} cathode active material powders for lithium-ion batteries. Thin layers of graphitic carbon were produced from a solid organic precursor, anthracene, by a one-step microwave plasma chemical vapor deposition (MPCVD) method. The structure and morphology of the carbon coatings were examined using SEM, TEM, and Raman spectroscopy. The composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes were electrochemically tested in lithium half coin cells. The composite cathodes made of the carbon-coated LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} powder showed superior electrochemical performance and increased capacity compared to standard composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes.

  16. High brightness microwave lamp

    DOEpatents

    Kirkpatrick, Douglas A.; Dolan, James T.; MacLennan, Donald A.; Turner, Brian P.; Simpson, James E.

    2003-09-09

    An electrodeless microwave discharge lamp includes a source of microwave energy, a microwave cavity, a structure configured to transmit the microwave energy from the source to the microwave cavity, a bulb disposed within the microwave cavity, the bulb including a discharge forming fill which emits light when excited by the microwave energy, and a reflector disposed within the microwave cavity, wherein the reflector defines a reflective cavity which encompasses the bulb within its volume and has an inside surface area which is sufficiently less than an inside surface area of the microwave cavity. A portion of the reflector may define a light emitting aperture which extends from a position closely spaced to the bulb to a light transmissive end of the microwave cavity. Preferably, at least a portion of the reflector is spaced from a wall of the microwave cavity. The lamp may be substantially sealed from environmental contamination. The cavity may include a dielectric material is a sufficient amount to require a reduction in the size of the cavity to support the desired resonant mode.

  17. Microwave hemorrhagic stroke detector

    DOEpatents

    Haddad, Waleed S.; Trebes, James E.

    2007-06-05

    The microwave hemorrhagic stroke detector includes a low power pulsed microwave transmitter with a broad-band antenna for producing a directional beam of microwaves, an index of refraction matching cap placed over the patients head, and an array of broad-band microwave receivers with collection antennae. The system of microwave transmitter and receivers are scanned around, and can also be positioned up and down the axis of the patients head. The microwave hemorrhagic stroke detector is a completely non-invasive device designed to detect and localize blood pooling and clots or to measure blood flow within the head or body. The device is based on low power pulsed microwave technology combined with specialized antennas and tomographic methods. The system can be used for rapid, non-invasive detection of blood pooling such as occurs with hemorrhagic stoke in human or animal patients as well as for the detection of hemorrhage within a patient's body.

  18. Microwave hemorrhagic stroke detector

    DOEpatents

    Haddad, Waleed S.; Trebes, James E.

    2002-01-01

    The microwave hemorrhagic stroke detector includes a low power pulsed microwave transmitter with a broad-band antenna for producing a directional beam of microwaves, an index of refraction matching cap placed over the patients head, and an array of broad-band microwave receivers with collection antennae. The system of microwave transmitter and receivers are scanned around, and can also be positioned up and down the axis of the patients head. The microwave hemorrhagic stroke detector is a completely non-invasive device designed to detect and localize blood pooling and clots or to measure blood flow within the head or body. The device is based on low power pulsed microwave technology combined with specialized antennas and tomographic methods. The system can be used for rapid, non-invasive detection of blood pooling such as occurs with hemorrhagic stroke in human or animal patients as well as for the detection of hemorrhage within a patient's body.

  19. Microwave waste processing technology overview

    SciTech Connect

    Petersen, R.D.

    1993-02-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the {open_quotes}cold{close_quotes} demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge.

  20. Microwave waste processing technology overview

    SciTech Connect

    Sprenger, G.S.; Petersen, R.D.

    1995-04-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the ``cold`` demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge.

  1. Carbon nanotubes and microwaves: interactions, responses, and applications.

    PubMed

    Vázquez, Ester; Prato, Maurizio

    2009-12-22

    The interaction of microwaves with carbon nanotubes (CNTs) is an interesting topic for a variety of potential applications. Microwaves have been used for the purification of CNTs and for their chemical functionalization, providing a technique for simple, green, and large-scale protocols. In addition, the selective destruction of metallic CNTs under microwave irradiation could potentially result in a batch of semiconducting-only nanotubes. As an innovative application, the combination of microwaves with well-aligned CNTs could produce a new illumination technology. Moreover, the microwave absorbing properties of CNTs and their different behavior from typical organic compounds may open the door to the preparation of a wide range of new materials useful in many fields. A few examples of practical applications include electromagnetic interference for protecting the environment from radiation and microwave hyperthermia for cancer treatment as well as other medical therapies requiring precise heating of biological tissues. PMID:20025299

  2. Microwave-assisted 'greener' synthesis of organics and nanomaterials

    EPA Science Inventory

    Microwave selective heating techniques in conjunction with greener reaction media are dramatically reducing chemical waste and reaction times in several organic transformations and material synthesis. This presentation summarizes author’s own experience in developing MW-assisted ...

  3. Microwave spectra of some chlorine and fluorine compounds. [spectroscopic analysis

    NASA Technical Reports Server (NTRS)

    White, W. F.

    1975-01-01

    A computer-controlled microwave spectrometer was used to catalog reference spectra for chemical analysis. Tables of absorption frequencies, peak absorption intensities, and integrated intensities are shown for 21 organic compounds which contain chlorine, fluorine, or both.

  4. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  5. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.

    PubMed

    Yun, Sun Jin; Lim, Jung Wook; Kim, Hyun-Tak

    2007-11-01

    Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (T(IL)) was considerably reduced compared to ZrO2 and Al2O3 films. The T(IL) was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2. PMID:18047146

  6. Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

    NASA Astrophysics Data System (ADS)

    Chernikova, A. G.; Kuzmichev, D. S.; Negrov, D. V.; Kozodaev, M. G.; Polyakov, S. N.; Markeev, A. M.

    2016-06-01

    We report the possibility of employment of low temperature (≤330 °C) plasma-enhanced atomic layer deposition for the formation of both electrodes and hafnium-oxide based ferroelectric in the metal-insulator-metal structures. The structural and ferroelectric properties of La doped HfO2-based layers and its evolution with the change of both La content (2.1, 3.7 and 5.8 at. %) and the temperature of the rapid thermal processing (550-750 °C) were investigated in detail. Ferroelectric properties emerged only for 2.1 and 3.7 at. % of La due to the structural changes caused by the given doping levels. Ferroelectric properties were also found to depend strongly on annealing temperature, with the most robust ferroelectric response for lowest La concentration and intermediate 650 °C annealing temperature. The long term wake-up effect and such promising endurance characteristics as 3 × 108 switches by bipolar voltage cycles with 30 μs duration and ± 3 MV/cm amplitude without any decrease of remnant polarization value were demonstrated.

  7. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

    SciTech Connect

    Das, Chittaranjan Henkel, Karsten; Tallarida, Massimo; Schmeißer, Dieter; Gargouri, Hassan; Kärkkänen, Irina; Schneidewind, Jessica; Gruska, Bernd; Arens, Michael

    2015-01-15

    Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

  8. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    SciTech Connect

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-05-15

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO{sub 2} thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr){sub 3}SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO{sub 2} films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO{sub 2} films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS.

  9. Fabrication of TiO2-modified polytetrafluoroethylene ultrafiltration membranes via plasma-enhanced surface graft pretreatment

    NASA Astrophysics Data System (ADS)

    Qian, Yingjia; Chi, Lina; Zhou, Weili; Yu, Zhenjiang; Zhang, Zhongzhi; Zhang, Zhenjia; Jiang, Zheng

    2016-01-01

    Surface hydrophilic modification of polymer ultrafiltration membrane using metal oxide represents an effective yet highly challenging solution to improve water flux and antifouling performance. Via plasma-enhanced graft of poly acryl acid (PAA) prior to coating TiO2, we successfully fixed TiO2 functional thin layer on super hydrophobic polytetrafluoroethylene (PTFE) ultrafiltration (UF) membranes. The characterization results evidenced TiO2 attached on the PTFE-based UF membranes through the chelating bidentate coordination between surface-grafted carboxyl group and Ti4+. The TiO2 surface modification may greatly reduce the water contact angle from 115.8° of the PTFE membrane to 35.0° without degradation in 30-day continuous filtration operations. The novel TiO2/PAA/PTFE membranes also exhibited excellent antifouling and self-cleaning performance due to the intrinsic hydrophilicity and photocatalysis properties of TiO2, which was further confirmed by the photo-degradation of MB under Xe lamp irradiation.

  10. Addition of Hetero-Atoms to the Polymer Film by Plasma Enhanced Polymerization and its Optical Properties

    NASA Astrophysics Data System (ADS)

    Moriki, Kazunori; Yumoto, Motoshige

    Plasma enhanced polymerization is an attractive technology to fabricate an optical polymer waveguide, because it has capability to provide an uniform thickness film on a substrate with various surface geometry, and to provide change of refractive index by controlling a proportion of source monomer mixing. In the present paper we discuss optical constants and molecule structures of the films added hetero-atoms, O, N and F in the CHx network of polymer. Refractive index of those films changes from 1.52 to 1.63 at 1.0 μm wavelength, depending on the variety of hetero-atoms. Fluorine atoms added into a film decreases refractive index of the film. Oxygen atoms added into a film, which form ester structure (- COO-), decrease refractive index of the film, and some O atoms token into a film as OH base will increase optical absorption in inferred region for optical communication. Nitrogen atoms added increase optical absorption due to forming NH2 base. Finally, sp3/sp2 fraction controlling in the film will be a suitable to control refractive index of the film for an optical waveguide, for example by using mixed monomer of C6H6 and C6H10.

  11. Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

    SciTech Connect

    Muneshwar, Triratna Cadien, Ken

    2015-11-15

    Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known. In this article, precursor condensation within an ALD valve is described, and the effect of the continuous precursor source from condensate evaporation on ALD growth is discussed. The influence of the ALD valve temperature on growth and electrical resistivity of ZrN plasma enhanced ALD (PEALD) films is reported. Increasing ALD valve temperature from 75 to 95 °C, with other process parameters being identical, decreased both the growth per cycle and electrical resistivity (ρ) of ZrN PEALD films from 0.10 to 0.07 nm/cycle and from 560 to 350 μΩ cm, respectively. Our results show that the non-ALD growth resulting from condensate accumulation is eliminated at valve temperatures close to the pressure corrected boiling point of precursor.

  12. Microwave Ovens--Out of the Kitchen

    NASA Astrophysics Data System (ADS)

    Cresswell, Sarah L.; Haswell, Stephen J.

    2001-07-01

    We are all aware of the advantages cooking or heating meals in a microwave oven can offer, but we may be less familiar with what this technology brings to the field of chemistry. This paper reviews the applications of microwaves in the chemical laboratory, including their use in undergraduate laboratory classes. We show that microwave ovens have successfully made the transition from kitchens to laboratories and the story continues. Perhaps the greatest impact of microwaves in the laboratory over the past 20 years has been in analytical chemistry, where rapid and efficient heating of samples in closed vessels or flow-through systems has revolutionized sample preparation methodology. The use of microwaves in extraction procedures before chromatographic analysis has sharply reduced the total analysis time and has allowed larger numbers of samples to be analyzed. More recently microwave technology has expanded into other branches of chemistry and is now being used in the relatively new field of combinatorial chemistry for fast preparation of large numbers of similar compounds.

  13. Thermal measurements of microwave transmitter feedhorn window

    NASA Technical Reports Server (NTRS)

    Perez, R. M.; Hoppe, D. J.

    1989-01-01

    Thermal measurements of microwave transmitter feedhorn windows were performed using an imaging infrared radiometer. The measurement technique is described and results are presented for windows made of 0.001-in. Kapton (trademark of Dupont Chemical Co.) and 0.1-in. HTP-6 (Space Shuttle tile material). Measured and calculated temperatures agree well.

  14. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  15. Destruction of dimethyl methylphosphonate using a microwave plasma torch

    NASA Astrophysics Data System (ADS)

    Uhm, Han S.; Cho, Soon C.; Hong, Yong C.; Park, Yang G.; Park, Ju S.

    2008-02-01

    A microwave plasma torch with a microwave power of 1.2kW destroys dimethyl methylphosphonate (DMMP) with a destruction rate of 1.14l/h, demonstrating a safe removal capability of stockpiled chemical weapons. The FTIR spectra of the discharge gas from DMMP destruction indicates near perfect elimination of DMMP when the proper amount of oxygen gas is added. This can be confirmed by the gas chromatography spectra, which show the disappearance of even intermediary compounds. The compactness and light weight of the microwave plasma torch provide an effective means of on-site removal of the chemical warfare agents found on a battlefield.

  16. Epithelial cell morphology and adhesion on diamond films deposited and chemically modified by plasma processes.

    PubMed

    Rezek, Bohuslav; Ukraintsev, Egor; Krátká, Marie; Taylor, Andrew; Fendrych, Frantisek; Mandys, Vaclav

    2014-09-01

    The authors show that nanocrystalline diamond (NCD) thin films prepared by microwave plasma enhanced chemical vapor deposition apparatus with a linear antenna delivery system are well compatible with epithelial cells (5637 human bladder carcinoma) and significantly improve the cell adhesion compared to reference glass substrates. This is attributed to better adhesion of adsorbed layers to diamond as observed by atomic force microscopy (AFM) beneath the cells. Moreover, the cell morphology can be adjusted by appropriate surface treatment of diamond by using hydrogen and oxygen plasma. Cell bodies, cytoplasmic rims, and filopodia were characterized by Peakforce AFM. Oxidized NCD films perform better than other substrates under all conditions (96% of cells adhered well). A thin adsorbed layer formed from culture medium and supplemented with fetal bovine serum (FBS) covered the diamond surface and played an important role in the cell adhesion. Nevertheless, 50-100 nm large aggregates formed from the RPMI medium without FBS facilitated cell adhesion also on hydrophobic hydrogenated NCD (increase from 23% to 61%). The authors discuss applicability for biomedical uses. PMID:25280853

  17. Microwave Lightcraft concept

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Looking like an alien space ship or a flying saucer the Microwave Lightcraft is an unconventional launch vehicle approach for delivering payload to orbit using power transmitted via microwaves. Microwaves re beamed from either a ground station or an orbiting solar power satellite to the lightcraft. The energy received breaks air molecules into a plasma and a magnetohydrodynamic fanjet provides the lifting force. Only a small amount of propellant is required for circulation, attitude control and deorbit.

  18. Advanced microwave processing concepts

    SciTech Connect

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.

    1997-04-01

    The purpose of this work is to explore the feasibility of several advanced microwave processing concepts to develop new energy-efficient materials and processes. The project includes two tasks: (1) commercialization of the variable-frequency microwave furnace; and (2) microwave curing of polymeric materials. The variable frequency microwave furnace, whose initial conception and design was funded by the AIM Materials Program, allows the authors, for the first time, to conduct microwave processing studies over a wide frequency range. This novel design uses a high-power traveling wave tube (TWT) originally developed for electronic warfare. By using this microwave source, one can not only select individual microwave frequencies for particular experiments, but also achieve uniform power densities over a large area by the superposition of many different frequencies. Microwave curing of various thermoset resins will be studied because it holds the potential of in-situ curing of continuous-fiber composites for strong, lightweight components or in-situ curing of adhesives, including metal-to-metal. Microwave heating can shorten curing times, provided issues of scaleup, uniformity, and thermal management can be adequately addressed.

  19. Advanced microwave processing concepts

    SciTech Connect

    Lauf, R.J.; McMillan, A.D.; Paulauskas, F.L.

    1995-05-01

    The purpose of this work is to explore the feasibility of several advanced microwave processing concepts to develop new energy-efficient materials and processes. The project includes two tasks: (1) commercialization of the variable-frequency microwave furnace; and (2) microwave curing of polymer composites. The variable frequency microwave furnace, whose initial conception and design was funded by the AIC Materials Program, will allow us, for the first time, to conduct microwave processing studies over a wide frequency range. This novel design uses a high-power traveling wave tube (TWT) originally developed for electronic warfare. By using this microwave source, one can not only select individual microwave frequencies for particular experiments, but also achieve uniform power densities over a large area by the superposition of many different frequencies. Microwave curing of thermoset resins will be studied because it hold the potential of in-situ curing of continuous-fiber composites for strong, lightweight components. Microwave heating can shorten curing times, provided issues of scaleup, uniformity, and thermal management can be adequately addressed.

  20. Flexible graphene based microwave attenuators.

    PubMed

    Byun, Kisik; Ju Park, Yong; Ahn, Jong-Hyun; Min, Byung-Wook

    2015-02-01

    We demonstrate flexible 3 dB and 6 dB microwave attenuators using multilayer graphene grown by the chemical vapor deposition method. On the basis of the characterized results of multilayer graphene and graphene-Au ohmic contacts, the graphene attenuators are designed and measured. The flexible graphene-based attenuators have 3 dB and 6 dB attenuation with a return loss of less than -15 dB at higher than 5 GHz. The devices have shown durability in a bending cycling test of 100 times. The circuit model of the attenuator based on the characterized results matches the experimental results well. PMID:25590144

  1. Synthesis and Mechanical Wear Studies of Ultra Smooth Nanostructured Diamond (USND) Coatings Deposited by Microwave Plasma Chemical Vapor Deposition with He/H2/CH4/N2 Mixtures

    PubMed Central

    Chowdhury, S.; Borham, J.; Catledge, S. A.; Eberhardt, A. W.; Johnson, P. S.; Vohra, Y. K.

    2008-01-01

    Ultra smooth nanostructured diamond (USND) coatings were deposited by microwave plasma chemical vapor deposition (MPCVD) technique using He/H2/CH4/N2 gas mixture. The RMS surface roughness as low as 4 nm (2 micron square area) and grain size of 5–6 nm diamond coatings were achieved on medical grade titanium alloy. Previously it was demonstrated that the C2 species in the plasma is responsible for the production of nanocrystalline diamond coatings in the Ar/H2/CH4 gas mixture. In this work we have found that CN species is responsible for the production of USND coatings in He/H2/CH4/N2 plasma. It was found that diamond coatings deposited with higher CN species concentration (normalized by Balmer Hα line) in the plasma produced smoother and highly nanostructured diamond coatings. The correlation between CN/Hα ratios with the coating roughness and grain size were also confirmed with different set of gas flows/plasma parameters. It is suggested that the presence of CN species could be responsible for producing nanocrystallinity in the growth of USND coatings using He/H2/CH4/N2 gas mixture. The RMS roughness of 4 nm and grain size of 5–6 nm were calculated from the deposited diamond coatings using the gas mixture which produced the highest CN/Hα species in the plasma. Wear tests were performed on the OrthoPOD®, a six station pin-on-disk apparatus with ultra-high molecular weight polyethylene (UHMWPE) pins articulating on USND disks and CoCrMo alloy disk. Wear of the UHMWPE was found to be lower for the polyethylene on USND than that of polyethylene on CoCrMo alloy. PMID:19112519

  2. Rutile-structured TiO{sub 2} deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

    SciTech Connect

    Pointet, John; Gonon, Patrice; Latu-Romain, Lawrence; Bsiesy, Ahmad Vallée, Christophe

    2014-01-15

    In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

  3. Characterization of plasma-enhanced atomic layer deposition of Al{sub 2}O{sub 3} using dimethylaluminum isopropoxide

    SciTech Connect

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.; Kaur, Manpuneet

    2014-03-15

    In this research, Al{sub 2}O{sub 3} films were grown by remote plasma-enhanced atomic layer deposition using a nonpyrophoric precursor, dimethylaluminum isopropoxide (DMAI), and oxygen plasma. After optimization, the growth rate was determined to be ∼1.5 Å/cycle within a growth window of 25–220 °C; the higher growth rate than reported for thermal atomic layer deposition was ascribed to the higher reactivity of the plasma species compared with H{sub 2}O and the adsorption of active oxygen at the surface, which was residual from the oxygen plasma exposure. Both effects enhance DMAI chemisorption and increase the saturation density. In addition, a longer oxygen plasma time was required at room temperature to complete the reaction and decrease the carbon contamination below the detection limit of x-ray photoemission spectroscopy. The properties of the subsequent Al{sub 2}O{sub 3} films were measured for different temperatures. When deposited at 25 °C and 200 °C, the Al{sub 2}O{sub 3} films demonstrated a single Al-O bonding state as measured by x-ray photoemission spectroscopy, a similar band gap of 6.8±0.2 eV as determined by energy loss spectroscopy, a similar index of refraction of 1.62±0.02 as determined by spectroscopic ellipsometry, and uniform growth with a similar surface roughness before and after growth as confirmed by atomic force microscopy. However, the room temperature deposited Al{sub 2}O{sub 3} films had a lower mass density (2.7 g/cm{sup 3} compared with 3.0 g/cm{sup 3}) and a higher atomic ratio of O to Al (2.1 compared with 1.6) as indicated by x-ray reflectivity and Rutherford backscattering spectroscopy, respectively.

  4. Applications of microwave radiation environmental remediation technologies

    SciTech Connect

    Krause, T.R.; Helt, J.E.

    1993-01-01

    A growing number of environmental remediation technologies (e.g., drying, melting, or sintering) utilize microwave radiation as an integral part of the process. An increasing number of novel applications, such as sustaining low-temperature plasmas or enhancing chemical reactivity, are also being developed. An overview of such technologies being developed by the Department of Energy is presented. A specific example being developed at Argonne National Laboratory, microwave-induced plasma reactors for the destruction of volatile organic compounds, is discussed in more detail.

  5. Applications of microwave radiation environmental remediation technologies

    SciTech Connect

    Krause, T.R.; Helt, J.E.

    1993-05-01

    A growing number of environmental remediation technologies (e.g., drying, melting, or sintering) utilize microwave radiation as an integral part of the process. An increasing number of novel applications, such as sustaining low-temperature plasmas or enhancing chemical reactivity, are also being developed. An overview of such technologies being developed by the Department of Energy is presented. A specific example being developed at Argonne National Laboratory, microwave-induced plasma reactors for the destruction of volatile organic compounds, is discussed in more detail.

  6. Coating Solar Cells By Microwave Plasma Deposition

    NASA Technical Reports Server (NTRS)

    Minaee, Behrooz; Chitre, Sanjeev R.; Zahedi, Narges

    1991-01-01

    Antireflection films deposited on silicon solar cells at high production rates with microwave-enhanced plasma deposition. Microwave energy at frequency of 2.45 GHz generates plasma in mixture of gases, from which thin film of silicon nitride deposits on silicon substrates. Reaction temperature relatively low (only 250 degrees C), and film deposition rate more than 500 Angstrom/minute - 2 to 5 times faster. Quality of antireflection film similar to that produced by chemical-vapor deposition. Uses less power and consumes smaller quantities of gas. Species formed in plasma longer lived and dissociate reactants in region of chamber well away from plasma-generation region.

  7. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  8. MICROWAVES IN ORGANIC SYNTHESIS

    EPA Science Inventory

    The effect of microwaves, a non-ionizing radiation, on organic reactions is described both in polar solvents and under solvent-free conditions. The special applications are highlighted in the context of solventless organic synthesis which involve microwave (MW) exposure of neat r...

  9. Microwave processing of ceramics

    SciTech Connect

    Katz, J.D.

    1993-01-01

    Recent work in the areas of microwave processing and joining of ceramics is briefly reviewed. Advantages and disadvantages of microwave processing as well as some of the current issues in the field are discussed. Current state and potential for future commercialization of this technology is also addressed.

  10. Microwave processing of ceramics

    SciTech Connect

    Katz, J.D.

    1993-04-01

    Recent work in the areas of microwave processing and joining of ceramics is briefly reviewed. Advantages and disadvantages of microwave processing as well as some of the current issues in the field are discussed. Current state and potential for future commercialization of this technology is also addressed.

  11. Television Microwave--1971.

    ERIC Educational Resources Information Center

    Peterson, Roger E.

    Since it became a reality just before World War II, terrestrial microwave has improved in systems and equipments, but with the improvements have come higher costs. Television microwave costs are so high because users are demanding more capability, land prices have increased, operating costs are higher, and there is frequency congestion along many…

  12. Variable frequency microwave heating apparatus

    DOEpatents

    Bible, Don W.; Lauf, Robert J.; Johnson, Arvid C.; Thigpen, Larry T.

    1999-01-01

    A variable frequency microwave heating apparatus (10) designed to allow modulation of the frequency of the microwaves introduced into a multi-mode microwave cavity (34) for testing or other selected applications. The variable frequency microwave heating apparatus (10) includes a microwave signal generator (12) and a high-power microwave amplifier (20) or a high-power microwave oscillator (14). A power supply (22) is provided for operation of the high-power microwave oscillator (14) or microwave amplifier (20). A directional coupler (24) is provided for detecting the direction and amplitude of signals incident upon and reflected from the microwave cavity (34). A first power meter (30) is provided for measuring the power delivered to the microwave furnace (32). A second power meter (26) detects the magnitude of reflected power. Reflected power is dissipated in the reflected power load (28).

  13. Microwave hydrology: A trilogy

    NASA Technical Reports Server (NTRS)

    Stacey, J. M.; Johnston, E. J.; Girard, M. A.; Regusters, H. A.

    1985-01-01

    Microwave hydrology, as the term in construed in this trilogy, deals with the investigation of important hydrological features on the Earth's surface as they are remotely, and passively, sensed by orbiting microwave receivers. Microwave wavelengths penetrate clouds, foliage, ground cover, and soil, in varying degrees, and reveal the occurrence of standing liquid water on and beneath the surface. The manifestation of liquid water appearing on or near the surface is reported by a microwave receiver as a signal with a low flux level, or, equivalently, a cold temperature. Actually, the surface of the liquid water reflects the low flux level from the cosmic background into the input terminals of the receiver. This trilogy describes and shows by microwave flux images: the hydrological features that sustain Lake Baykal as an extraordinary freshwater resource; manifestations of subsurface water in Iran; and the major water features of the Congo Basin, a rain forest.

  14. Microwave ion source

    DOEpatents

    Leung, Ka-Ngo; Reijonen, Jani; Thomae, Rainer W.

    2005-07-26

    A compact microwave ion source has a permanent magnet dipole field, a microwave launcher, and an extractor parallel to the source axis. The dipole field is in the form of a ring. The microwaves are launched from the middle of the dipole ring using a coaxial waveguide. Electrons are heated using ECR in the magnetic field. The ions are extracted from the side of the source from the middle of the dipole perpendicular to the source axis. The plasma density can be increased by boosting the microwave ion source by the addition of an RF antenna. Higher charge states can be achieved by increasing the microwave frequency. A xenon source with a magnetic pinch can be used to produce intense EUV radiation.

  15. Microwave radiation hazards around large microwave antenna.

    NASA Technical Reports Server (NTRS)

    Klascius, A.

    1973-01-01

    The microwave radiation hazards associated with the use of large antennas become increasingly more dangerous to personnel as the transmitters go to ever higher powers. The near-field area is of the greatest concern. It has spill over from subreflector and reflections from nearby objects. Centimeter waves meeting in phase will reinforce each other and create hot spots of microwave energy. This has been measured in front of and around several 26-meter antennas. Hot spots have been found and are going to be the determining factor in delineating safe areas for personnel to work. Better techniques and instruments to measure these fields are needed for the evaluation of hazard areas.

  16. Microwave continuous sterilization of injection ampoules.

    PubMed

    Sasaki, K; Honda, W; Shimizu, K; Iizima, K; Ehara, T; Okuzawa, K; Miyake, Y

    1996-01-01

    A new microwave continuous sterilizer (MWS) for applying microwave dielectric heating as an alternative to an autoclave was developed. The developmental objectives of the MWS were: 1. Achieving sufficient sterilization for the drugs containing heat-sensitive ingredients. 2. Measuring and recording sterilization temperature of each ampoule. 3. Ensuring automatic continuous operation and linkage with the preceding and following machines in an injection ampoule production process. The temperature of the drug solution in an ampoule was heated to 140 degrees C within about 30 seconds by the MWS. Target F0 value is achieved through the maintaining heater to maintain the target temperature for 12 seconds. Ampoules are cooled with air and water after completion of heating. The MWS is capable of processing 150 ampoules per minute. The newly developed techniques which minimized temperature distribution of heated ampoule solution were: 1. Microwave irradiation in a direction opposite to the direction of ampoules transportation. 2. Microwave irradiation in the lower part of ampoule solution (i.e., heating up the drug solution by thermal convection.) 3. Microwave power control by feedback of measured temperatures. 4. Heating rate control corresponding to the dielectric property of ampoule solution. The drug stability test was performed using 3% pyridoxamine phosphate solution, and the inactivation of spores in 3% pyridoxamine phosphate solution was examined using Bacillus stearothermophilus ATCC 7953 spores. The MWS was proved to have an adequate efficiency of sterilization with less chemical degradation of the contents than an autoclave. PMID:8696781

  17. Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

    SciTech Connect

    Liu, H. Y.; Avrutin, V.; Izyumskaya, N.; Oezguer, Ue.; Morkoc, H.; Yankovich, A. B.; Kvit, A. V.; Voyles, P. M.

    2012-05-15

    We report on the mechanisms governing electron transport using a comprehensive set of ZnO layers heavily doped with Ga (GZO) grown by plasma-enhanced molecular-beam epitaxy on a-plane sapphire substrates with varying oxygen-to-metal ratios and Ga fluxes. The analyses were conducted by temperature dependent Hall measurements which were supported by microstructural investigations as well. Highly degenerate GZO layers with n > 5 x 10{sup 20} cm{sup -3} grown under metal-rich conditions (reactive oxygen-to-metal ratio <1) show relatively larger grains ({approx}20-25 nm by x-ray diffraction) with low-angle boundaries parallel to the polar c-direction. For highly conductive GZO layers, ionized-impurity scattering with almost no compensation is the dominant mechanism limiting the mobility in the temperature range from 15 to 330 K and the grain-boundary scattering governed by quantum-mechanical tunnelling is negligible. However, due to the polar nature of ZnO having high crystalline quality, polar optical phonon scattering cannot be neglected for temperatures above 150 K, because it further reduces mobility although its effect is still substantially weaker than the ionized impurity scattering even at room temperature (RT). Analysis of transport measurements and sample microstructures by x-ray diffraction and transmission electron microscopy led to a correlation between the grain sizes in these layers and mobility even for samples with a carrier concentration in the upper 10{sup 20} cm{sup -3} range. In contrast, electron transport in GZO layers grown under oxygen-rich conditions (reactive oxygen-to-metal ratio >1), which have inclined grain boundaries and relatively smaller grain sizes of 10-20 nm by x-ray diffraction, is mainly limited by compensation caused by acceptor-type point-defect complexes, presumably (Ga{sub Zn}-V{sub Zn}), and scattering on grain boundaries. The GZO layers with n <10{sup 20} cm{sup -3} grown under metal-rich conditions with reduced Ga fluxes

  18. Microwave bonding of MEMS component

    NASA Technical Reports Server (NTRS)

    Barmatz, Martin B. (Inventor); Mai, John D. (Inventor); Jackson, Henry W. (Inventor); Budraa, Nasser K. (Inventor); Pike, William T. (Inventor)

    2005-01-01

    Bonding of MEMs materials is carried out using microwave. High microwave absorbing films are placed within a microwave cavity, and excited to cause selective heating in the skin of the material. This causes heating in one place more than another. Thereby minimizing the effects of the bonding microwave energy.

  19. Microwave and RF assisted chemical vapor infiltration

    SciTech Connect

    Devlin, D.J.; Barbero, R.S.

    1995-05-01

    Work during this reporting period has focused on the development of a CVI technique for rapid production of carbon/carbon and alumina composite systems. The focus of the alumina effort is towards porous materials for membrane supports and hot gas filtration. Industrial interest in these applications include companies such as: Dow, Westinghouse, Amoco and DuPont. Applications for the carbon materials are numerous and include: brakes, sporting goods, biomedical materials, flaps and seals for thrust control, after burner nozzles, turbine engine flaps and rotors. This effort will focus on aircraft brakes. A collaboration is underway with Hitco a major producer of carbon/carbon materials.

  20. Microwave vision for robots

    NASA Technical Reports Server (NTRS)

    Lewandowski, Leon; Struckman, Keith

    1994-01-01

    Microwave Vision (MV), a concept originally developed in 1985, could play a significant role in the solution to robotic vision problems. Originally our Microwave Vision concept was based on a pattern matching approach employing computer based stored replica correlation processing. Artificial Neural Network (ANN) processor technology offers an attractive alternative to the correlation processing approach, namely the ability to learn and to adapt to changing environments. This paper describes the Microwave Vision concept, some initial ANN-MV experiments, and the design of an ANN-MV system that has led to a second patent disclosure in the robotic vision field.