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Sample records for mm-thick cdte detectors

  1. Performance of a 6 mm thick CdTe detector for 166 keV gamma rays

    NASA Astrophysics Data System (ADS)

    McKee, B. T. A.; Goetz, T.; Hazlett, T.; Forkert, L.

    1988-11-01

    In order to extend the utility of CdTe detectors to higher gamma ray energies, yet avoid increasing the charge collection problems of thick detectors, a 6 mm thick detector configuration has been developed consisting of three crystals 2 mm thick and of 16 mm diameter. The active volume is over 1.0 cm 3. The performance of this detector has been evaluated for gamma rays of 166 keV energy by measuring the pulse height spectra and determining the intrinsic peak and total efficiencies over a range of bias voltages and amplifier time constants. A maximum peak and total efficiency of 41% and 80% were obtained with 200 V bias and 2 μs amplifier time constant, although under these conditions the noise width was almost 40 keV FWHM. A Monte Carlo model was used to simulate the gamma ray and electron interaction in this 6 mm detector. Charge collection, including trapping effects, was incorporated into the model. The model pulse height spectra could be approximately matched to the measured data using hole and electron effective mobility values of 60 and 600 cm 2/V s, and hole and electron mean trapping times of 25 and 15 μs. Our findings indicate that detectors such as this will not be useful for high resolution spectroscopic applications, but the high gamma ray stopping power will be of interest for applications where the noise width is acceptable. Results from the modelling imply that in this detector shallow trapping sites (reducing the effective mobility) are more important than deep trapping sites in contributing to incomplete charge collection.

  2. High-contrast X-ray radiography using hybrid semiconductor pixel detectors with 1 mm thick Si sensor as a tool for monitoring liquids in natural building stones

    NASA Astrophysics Data System (ADS)

    Krejci, F.; Slavikova, M.; Zemlicka, J.; Jakubek, J.; Kotlik, P.

    2014-07-01

    For the preservation of buildings and other cultural heritage, the application of various conservation products such as consolidants or water repellents is often used. X-ray radiography utilizing semiconductor particle-counting detectors stands out as a promising tool in research of consolidants inside natural building stones. However, a clear visualization of consolidation products is often accomplished by doping with a contrast agent, which presents a limitation. This approach causes a higher attenuation for X-rays, but also alters the penetration ability of the original consolidation product. In this contribution, we focus on the application of Medipix type detectors newly equipped with a 1 mm thick Si sensor. This thicker sensor has enhanced detection efficiency leading to extraordinary sensitivity for monitoring consolidants and liquids in natural building stones even without any contrast agent. Consequently, methods for the direct monitoring of organosilicon consolidants and dynamic visualization of the water uptake in the Opuka stone using high-contrast X-ray radiography are demonstrated. The presented work demonstrates a significant improvement in the monitoring sensitivity of X-ray radiography in stone consolidation studies and also shows advantages of this detector configuration for X-ray radiography in general.

  3. Energy and coincidence time resolution measurements of CdTe detectors for PET

    PubMed Central

    Ariño, G.; Chmeissani, M.; De Lorenzo, G.; Puigdengoles, C.; Cabruja, E.; Calderón, Y.; Kolstein, M.; Macias-Montero, J.G.; Martinez, R.; Mikhaylova, E.; Uzun, D.

    2013-01-01

    We report on the characterization of 2 mm thick CdTe diode detector with Schottky contacts to be employed in a novel conceptual design of PET scanner. Results at −8°C with an applied bias voltage of −1000 V/mm show a 1.2% FWHM energy resolution at 511 keV. Coincidence time resolution has been measured by triggering on the preamplifier output signal to improve the timing resolution of the detector. Results at the same bias and temperature conditions show a FWHM of 6 ns with a minimum acceptance energy of 500 keV. These results show that pixelated CdTe Schottky diode is an excellent candidate for the development of next generation nuclear medical imaging devices such as PET, Compton gamma cameras, and especially PET-MRI hybrid systems when used in a magnetic field immune configuration. PMID:23750177

  4. Radiation induced polarization in CdTe detectors

    NASA Astrophysics Data System (ADS)

    Vartsky, D.; Goldberg, M.; Eisen, Y.; Shamai, Y.; Dukhan, R.; Siffert, P.; Koebel, J. M.; Regal, R.; Gerber, J.

    1988-01-01

    Polarization induced by irradiation with intense gamma ray sources has been studied in chlorine-compensated CdTe detectors. The influence of several parameters, such as applied field strength, temperature and incident photon flux, on the polarization effect have been investigated. A relationship was found between the degree of polarization, detector efficiency and detector leakage current.

  5. Evaluation of Compton gamma camera prototype based on pixelated CdTe detectors.

    PubMed

    Calderón, Y; Chmeissani, M; Kolstein, M; De Lorenzo, G

    2014-06-01

    A proposed Compton camera prototype based on pixelated CdTe is simulated and evaluated in order to establish its feasibility and expected performance in real laboratory tests. The system is based on module units containing a 2×4 array of square CdTe detectors of 10×10 mm(2) area and 2 mm thickness. The detectors are pixelated and stacked forming a 3D detector with voxel sizes of 2 × 1 × 2 mm(3). The camera performance is simulated with Geant4-based Architecture for Medicine-Oriented Simulations(GAMOS) and the Origin Ensemble(OE) algorithm is used for the image reconstruction. The simulation shows that the camera can operate with up to 10(4) Bq source activities with equal efficiency and is completely saturated at 10(9) Bq. The efficiency of the system is evaluated using a simulated (18) F point source phantom in the center of the Field-of-View (FOV) achieving an intrinsic efficiency of 0.4 counts per second per kilobecquerel. The spatial resolution measured from the point spread function (PSF) shows a FWHM of 1.5 mm along the direction perpendicular to the scatterer, making it possible to distinguish two points at 3 mm separation with a peak-to-valley ratio of 8. PMID:24932209

  6. Digital pulse-shape processing for CdTe detectors

    NASA Astrophysics Data System (ADS)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.; Wachtmeister, S.

    2001-09-01

    CdTe detectors suffer from low photo-peak efficiency and poor energy resolution. These problems are due to the drift properties of charge carriers in CdTe where particularly the holes have small mobility and trapping time. This is reflected in the amplitude and the shape of the detector output. To improve this situation a digital method is introduced where a sampling ADC is used to make a detailed measurement of the time evolution of the pulse. The measured pulse shape is fitted with a model. For the detector under study a model taking hole trapping into account significantly improves the photo-peak efficiency. The description of the hole component is, however, not fully satisfactory since for pulses with a large hole contribution a broadening of the full-energy peak occurs. Allowing for inhomogeneities in the detector material within the model partially remedies this deficiency.

  7. CdTe focal plane detector for hard x-ray focusing optics

    NASA Astrophysics Data System (ADS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Gregory, Kyle; Inglis, Andrew; Panessa, Marco

    2015-08-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 mm x 20 mm CdTe-based detector with 250 μm square pixels (80x80 pixels) which achieves 1 keV FWHM @ 60 keV and gives full spectroscopy between 5 keV and 200 keV. An added advantage of these detectors is that they have a full-frame readout rate of 10 kHz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1mm-thick CdTe detectors are tiled into a 2x2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flightsuitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  8. Performance of CdTe gamma-ray detectors fabricated in a new M π n design

    NASA Astrophysics Data System (ADS)

    Niraula, M.; Mochizuki, D.; Aoki, T.; Tomita, Y.; Hatanaka, Y.

    2000-06-01

    CdTe radiation detectors have been fabricated in a new M-π-n structure that provides very effective blocking for the leakage current and, as a result, excellent spectral responses are achieved. An iodine-doped n-CdTe layer was grown on the Te-faces of the (1 1 1)-oriented high-resistivity (˜10 9 Ω cm) ρ-type CdTe wafers at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side, while a gold electrode was evaporated on the other side. Low leakage current around 60 pA/mm 2 was typically attained for a 0.5 mm thick detector at room-temperature (25°C) for an applied reverse bias of 250 V. Improved charge collection efficiency and spectral responses for different radioisotopes in the energy range of a few tens of keV to several hundreds of keV were obtained due to the application of very large electric fields on the detectors. The performance of the detectors thus fabricated is presented.

  9. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    NASA Astrophysics Data System (ADS)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  10. Characterization of M-π-n CdTe pixel detectors coupled to HEXITEC readout chip

    NASA Astrophysics Data System (ADS)

    Veale, M. C.; Kalliopuska, J.; Pohjonen, H.; Andersson, H.; Nenonen, S.; Seller, P.; Wilson, M. D.

    2012-01-01

    Segmentation of the anode-side of an M-π-n CdTe diode, where the pn-junction is diffused into the detector bulk, produces large improvements in the spatial and energy resolution of CdTe pixel detectors. It has been shown that this fabrication technique produces very high inter-pixel resistance and low leakage currents are obtained by physical isolation of the pixels of M-π-n CdTe detectors. In this paper the results from M-π-n CdTe detectors stud bonded to a spectroscopic readout ASIC are reported. The CdTe pixel detectors have 250 μm pitch and an area of 5 × 5 mm2 with thicknesses of 1 and 2 mm. The polarization and energy resolution dependence of the M-π-n CdTe detectors as a function of detector thickness are discussed.

  11. Development of mammography system using CdTe photon counting detector for the exposure dose reduction

    NASA Astrophysics Data System (ADS)

    Maruyama, Sho; Niwa, Naoko; Yamazaki, Misaki; Yamakawa, Tsutomu; Nagano, Tatsuya; Kodera, Yoshie

    2014-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) photon-counting detector for exposure dose reduction. In contrast to conventional mammography, this system uses high-energy X-rays. This study evaluates the usefulness of this system in terms of the absorbed dose distribution and contrast-to-noise ratio (CNR) at acrylic step using a Monte Carlo simulation. In addition, we created a prototype system that uses a CdTe detector and automatic movement stage. For various conditions, we measured the properties and evaluated the quality of images produced by the system. The simulation result for a tube voltage of 40 kV and tungsten/barium (W/Ba) as a target/filter shows that the surface dose was reduced more than 60% compared to that under conventional conditions. The CNR of our proposal system also became higher than that under conventional conditions. The point at which the CNRs coincide for 4 cm polymethyl methacrylate (PMMA) at the 2-mm-thick step corresponds to a dose reduction of 30%, and these differences increased with increasing phantom thickness. To improve the image quality, we determined the problematic aspects of the scanning system. The results of this study indicate that, by using a higher X-ray energy than in conventional mammography, it is possible to obtain a significant exposure dose reduction without loss of image quality. Further, the image quality of the prototype system can be improved by optimizing the balance between the shift-and-add operation and the output of the X-ray tube. In future work, we will further examine these improvement points.

  12. Performance and qualification of CdTe pixel detectors for the Spectrometer/Telescope for Imaging X-rays

    NASA Astrophysics Data System (ADS)

    Grimm, O.; Bednarzik, M.; Birrer, G.; Arnold, N.; Commichau, V.; Hurford, G.; Krucker, S.; Limousin, O.; Meuris, A.

    2015-02-01

    The Spectrometer/Telescope for Imaging X-rays (STIX) is a remote sensing instrument on-board the ESA Solar Orbiter spacecraft. STIX is designated to the study of energetic phenomena in solar flares. A Fourier-imaging technique using tungsten grid collimators in front of CdTe pixel detectors is employed, covering the 4 to 150 keV energy range with a full-width-half maximum resolution around 1 keV at low energies. Acrorad CdTe detectors of 1 mm thickness with a planar aluminum Schottky contact are used as basis for a subsequent patterning process into eight large pixels, four small pixels, and a guard ring. The patterning is done by means of microfabrication technologies. The area of the patterned sensor is 10×10 mm2. Test equipment has been developed for selecting the detectors with best performance prior to integration with the read-out system, and for qualification purposes. The set-up allows pixel-based dark current measurements at low temperatures. Pixel dark currents below 60 pA are needed to avoid excess noise in the read-out ASIC. The best pixels show dark currents below 10 pA at 300 V bias and -20 °C. Spectroscopic measurements with 133Ba sources confirm the good performance. This paper briefly explains the mission context of the CdTe detectors and then gives details of the production and testing procedures. Typical results are shown, with emphasis on performance degradation studies from displacement damage by proton irradiation. This is expected to be the dominant degradation mechanism for this application.

  13. Position-sensitive CdTe detector using improved crystal growth method

    NASA Astrophysics Data System (ADS)

    1988-09-01

    The feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.

  14. Position-sensitive CdTe detector using improved crystal growth method

    NASA Technical Reports Server (NTRS)

    1988-01-01

    The feasibility of developing a position-sensitive CdTe detector array for astronomical observations in the hard X-ray, soft gamma ray region is demonstrated. In principle, it was possible to improve the resolution capability for imaging measurements in this region by orders of magnitude over what is now possible through the use of CdTe detector arrays. The objective was to show that CdTe crystals of the quality, size and uniformity required for this application can be obtained with a new high pressure growth technique. The approach was to fabricate, characterize and analyze a 100 element square array and several single-element detectors using crystals from the new growth process. Results show that detectors fabricated from transversely sliced, 7 cm diameter wafers of CdTe exhibit efficient counting capability and a high degree of uniformity over their entire areas. A 100 element square array of 1 sq mm detectors was fabricated and operated.

  15. Photon counting X-ray imaging with CdTe pixel detectors based on XPAD2 circuit

    NASA Astrophysics Data System (ADS)

    Franchi, Romain; Glasser, Francis; Gasse, Adrien; Clemens, Jean-Claude

    2006-07-01

    A semiconductor hybrid pixel detector for photon counting X-ray imaging has been developed and tested under radiation. The sensor is based on recent uniform CdTe single crystal associated with XPAD 2 counting chip via innovative processes of interconnection. The building detector is 1 mm thick, with an area of 1 cm 2 and consists of 600 square pixels cells 330 μm side. The readout chip working in electron collection mode is capable of setting homogeneous threshold with only a dispersion of 730 e -. Maximum noise level has been evaluated around 15 keV. First experiments under X-rays demonstrate a very good efficiency of detection. Moreover, imaging system allows excellent linearity over a large-scale achieving count rate of 3×10 6 photons/s/mm 2. Spectrometric measurements point up the system potential in multi-energies applications by locating and resolving X-rays lines of 241Am and 57Co sources.

  16. Performance of a new Schottky CdTe detector for hard x-ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Takahashi, Tadayuki; Hirose, K.; Matsumoto, Chiho; Takizawa, Kyoko; Ohno, Ryouichi; Ozaki, Tsutomu; Mori, Kunishiro; Tomita, Yasuhiro

    1998-07-01

    We report a significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface using a low work-function metal, indium. For a 2 X 2 mm(superscript 2) detector with a thickness of 0.5 mm the leakage current was measured to be 0.7 nA at room temperature (20 degree(s)C) and 10 pA at -20 degree(s)C for a 400 V bias voltage. The low-leakage current of the detector allows us to operate the detector at a higher bias voltage than previous CdTe detectors. The improved charge collection efficiency and the low-leakage current leads to an energy resolution of 1.1 - 2.5 keV FWHM in the energy range 2 keV to 150 keV at 20 degree(s)C without charge loss correction electronics. We confirmed that once a high electric field of several kV/cm is applied, the Schottky CdTe has a very good energy resolution as well as sufficient stability to be used for practical applications.

  17. Testing the plutonium isotopic analysis code FRAM with various CdTe detectors.

    SciTech Connect

    Vo, Duc T.; Russo, P. A.

    2002-01-01

    The isotopic analysis code Fixed-energy Response-function Analysis with Multiple efficiency (FRAM)1,2 has been proven to successfully analyze plutonium spectra taken with a portable CdTe detector with Peltier cooling, the first results of this kind for a noncryogenic detector.3 These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than Ge spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. This paper describes further testing of FRAM with two CdTe detectors of different sizes and resolutions using different analog and digital, portable multichannel analyzers (MCAs).

  18. High performance p-i-n CdTe and CdZnTe detectors

    NASA Astrophysics Data System (ADS)

    Khusainov, A. Kh; Dudin, A. L.; Ilves, A. G.; Morozov, V. F.; Pustovoit, A. K.; Arlt, R. D.

    1999-06-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  19. Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

    2003-01-01

    The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

  20. Simulation of active-edge pixelated CdTe radiation detectors

    NASA Astrophysics Data System (ADS)

    Duarte, D. D.; Lipp, J. D.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.

    2016-01-01

    The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

  1. CdTe X-ray detectors under strong optical irradiation

    SciTech Connect

    Cola, Adriano; Farella, Isabella

    2014-11-17

    The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes.

  2. Frontal IBICC study of the induced proton radiation damage in CdTe detectors

    NASA Astrophysics Data System (ADS)

    Pastuović, Željko; Jakšić, Milko

    2001-07-01

    Within a continuous international effort in developing the non-cryogenic semiconductor detectors for gamma ray spectroscopy, various wide gap materials were considered. With a best performance achieved, CdTe- and CdZnTe-based detectors become today widely accepted and commercially available. In addition to possible future use of such detectors for particle-induced gamma-ray emission (PIGE), nuclear microprobes are in recent years applied more as their characterisation tool using the ion beam-induced charge collection (IBICC) technique. Several CdTe detectors of 2×2×1 mm3 size were used in this study. On the basis of frontal IBICC measurements of the charge collection efficiency (CCE) distribution, the spectroscopy performance of detectors were measured. Further degradation of charge collection efficiency and the downward trend in peak position were studied by on-line irradiation of CdTe samples with 3 MeV protons up to 10 10 p/cm2 radiation dose.

  3. Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

    NASA Astrophysics Data System (ADS)

    Jambi, L. K.; Lees, J. E.; Bugby, S. L.; Tipper, S.; Alqahtani, M. S.; Perkins, A. C.

    2015-06-01

    Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported.

  4. Balloon-Borne Hard X-Ray Spectrometer Using CdTe Detectors

    NASA Astrophysics Data System (ADS)

    Kobayashi, K.; Tsuneta, S.; Tamura, T.; Kumagai, K.; Katsukawa, Y.; Kubo, M.; Sakamoto, Y.; Kohara, N.; Yamagami, T.; Saito, Y.; Mori, K.

    2008-08-01

    Spectroscopic observation of solar flares in the hard X-ray energy range, particularly the 20 ˜ 100 keV region, is an invaluable tool for investigating the flare mechanism. This paper describes the design and performance of a balloon-borne hard X-ray spectrometer using CdTe detectors developed for solar flare observation. The instrument is a small balloon payload (gondola weight 70 kg) with sixteen 10×10×0.5 mm CdTe detectors, designed for a 1-day flight at 41 km altitude. It observes in an energy range of 20-120 keV and has an energy resolution of 3 keV at 60 keV. The second flight on 24 May 2002 succeeded in observing a class M1.1 flare.

  5. P-I-N CdTe gamma-ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Niizawa, G.T.; Pasko, J.G.; Bostrup, G.L.; Ryan, F.J.; Khoshnevisan, M.; Westmark, C.I.; Fuller, C.

    1984-01-01

    A new device concept of CdTe gamma ray detectors has been demonstrated by using p+(HgCdTe)-n(CdTe)-n+(HgCdTe) diode structures. Both p+ and n/sup +/-type Hg/sub 0.25/Cd/sub 0.75/Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE-grown P-I-N structure offers potential advantages for p-n junction formation and ohmic contact over standard ion-implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 keV were obtained for the 122 keV gamma peak of Co/sup 57/ at room temperature.

  6. P-I-N CdTe gamma ray detectors by liquid phase epitaxy (LPE)

    SciTech Connect

    Shin, S.H.; Bostrup, G.L.; Fuller, C.; Khoshnevisan, M.; Niizawa, G.T.; Pasko, J.G.; Ryan, F.J.; Westmark, C.I.

    1985-02-01

    A new device concept for CdTe gamma ray detectors has been demonstrated using p/sup +/(HgCdTe)-n(CdTe)-n/sup +/ (HgCdTe) diode structures. Both p/sup +/ and n/sup +/ Hg /SUB 0.25/ Cd /SUB 0.75/ Te epilayers were grown by the liquid phase epitaxy (LPE) technique on semi-insulating CdTe sensor elements. The LPE grown P-I-N structure offers potential advantages for p-n junction and ohmic contact formation over standard ion implanted diodes or Schottky barrier devices. Detectors with active areas of 2 mm/sup 2/ were fabricated. Resolutions of 10 KeV were obtained for the 122 KeV gamma peak of Co/sup 57/ at room temperature.

  7. Large-area CdTe diode detector for space application

    NASA Astrophysics Data System (ADS)

    Nakazawa, K.; Takahashi, T.; Watanabe, S.; Sato, G.; Kouda, M.; Okada, Y.; Mitani, T.; Kobayashi, Y.; Kuroda, Y.; Onishi, M.; Ohno, R.; Kitajima, H.

    2003-10-01

    The current status of Schottky CdTe diode detectors, especially in view of their space application for hard X-ray and gamma-ray astronomy, are reported. For practical use in space science, a large-area CdTe diode with a size of 21.5×21.5mm2 and a thickness of 0.5mm was developed. A good energy resolution, 2.8keV (FWHM) at -20°C, and high homogeneity to within 0.2% over the detector were achieved for the spectral performance. This device has successfully passed a series of tests required for its use in space, in view of utilizing Japanese M-V rockets. The tests include the mechanical environment test, vacuum test, long run for weeks and proton-beam radiation. Initial results from a 2×2 segmented electrode large-area device with a guard-ring are also presented.

  8. ASTRO-H CdTe detectors proton irradiation at PIF

    NASA Astrophysics Data System (ADS)

    Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

    2015-07-01

    ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 μm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper, we report on the test campaigns at PIF and will show up our experimental setup. We will pursue describing the irradiation conditions associated with our GEANT 4 predictions and finally, we report the main results of our campaigns concluding that the proton effect does not severely affect the CdTe response neither the detector stability while the secondary neutrons might be more active to reduce the performance on the long run.

  9. Imaging detector development for nuclear astrophysics using pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Álvarez, J. M.; Gálvez, J. L.; Hernanz, M.; Isern, J.; Llopis, M.; Lozano, M.; Pellegrini, G.; Chmeissani, M.

    2010-11-01

    The concept of focusing telescopes in the energy range of lines of astrophysical interest (i.e., of energies around 1 MeV) should allow to reach unprecedented sensitivities, essential to perform detailed studies of cosmic explosions and cosmic accelerators. Our research and development activities aim to study a detector suited for the focal plane of a γ-ray telescope mission. A CdTe/CdZnTe detector operating at room temperature, that combines high detection efficiency with good spatial and spectral resolution is being studied in recent years as a focal plane detector, with the interesting option of also operating as a Compton telescope monitor. We present the current status of the design and development of a γ-ray imaging spectrometer in the MeV range, for nuclear astrophysics, consisting of a stack of CdTe pixel detectors with increasing thicknesses. We have developed an initial prototype based on CdTe ohmic detector. The detector has 11×11 pixels, with a pixel pitch of 1 mm and a thickness of 2 mm. Each pixel is stud bonded to a fanout board and routed to an front end ASIC to measure pulse height and rise time information for each incident γ-ray photon. First measurements of a 133Ba and 241Am source are reported here.

  10. Super-resolution x-ray imaging by CdTe discrete detector arrays

    NASA Astrophysics Data System (ADS)

    Aoki, T.; Ishida, Y.; Morii, H.; Tomita, Y.; Ohashi, G.; Temmyo, J.; Hatanaka, Y.

    2005-08-01

    512-pixel CdTe super-liner imaging scanner was developed. This device was consist with 512 chips of M-π-n CdTe diode detector fabricated by excimer laser doping process, 8 chips of photon-counting mode 64ch ASIC with FPGA circuit, USB2.0 interface with 1-CPU. It has 5 discriminated levels and over 2Mcps count rate for X-ray penetration imaging. This imaging scanner has 512 discrete CdTe chips for detector arrays with the length of 2.0mm, width of 0.8mm and thickness of 0.5mm. These chips were mounted in four plover array rows for high-resolution imaging with 0.5mm-pitch, therefore the pixel pitch was over the pixel width. When images were taken with scanning system with this arrays, we could obtain over-resolution than pixel width. In this paper, this "over-resolution" imaging will be called "super resolution imaging". In high-resolution imaging device, the pixel devices on one substrate were formed by integrated process, or many discrete detector chips were installed on circuit board, usually. In the latter case, it is easer to make each detector chips than former case, and it are no need to consider charge sharing phenomena compare with one-chip pixel devices. However, a decrease in pixel pitch makes the mount to the detector chip to the ASIC board difficult because the handling will also be difficult The super-resolution technique in this scanner by pixel-shift method for X-ray imaging is shown in this paper

  11. Imaging and spectroscopic performance studies of pixellated CdTe Timepix detector

    NASA Astrophysics Data System (ADS)

    Maneuski, D.; Astromskas, V.; Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Marchal, J.; O'Shea, V.; Stewart, G.; Tartoni, N.; Wilhelm, H.; Wraight, K.; Zain, R. M.

    2012-01-01

    In this work the results on imaging and spectroscopic performances of 14 × 14 × 1 mm CdTe detectors with 55 × 55 μm and 110 × 110 μm pixel pitch bump-bonded to a Timepix chip are presented. The performance of the 110 × 110 μm pixel detector was evaluated at the extreme conditions beam line I15 of the Diamond Light Source. The energy of X-rays was set between 25 and 77 keV. The beam was collimated through the edge slits to 20 μm FWHM incident in the middle of the pixel. The detector was operated in the time-over-threshold mode, allowing direct energy measurement. Energy in the neighbouring pixels was summed for spectra reconstruction. Energy resolution at 77 keV was found to be ΔE/E = 3.9%. Comparative imaging and energy resolution studies were carried out between two pixel size detectors with a fluorescence target X-ray tube and radioactive sources. The 110 × 110 μm pixel detector exhibited systematically better energy resolution in comparison to 55 × 55 μm. An imaging performance of 55 × 55 μm pixellated CdTe detector was assessed using the Modulation Transfer Function (MTF) technique and compared to the larger pixel. A considerable degradation in MTF was observed for bias voltages below -300 V. Significant room for improvement of the detector performance was identified both for imaging and spectroscopy and is discussed.

  12. CdTe detectors in medicine: a review of current applications and future perspectives

    NASA Astrophysics Data System (ADS)

    Scheiber, C.; Chambron, J.

    1992-11-01

    Cadmium telluride (CdTe) semiconductor sensors have been evaluated for medical applications for 15 years owing to their high stopping power, convenient energy resolution and operating conditions at room temperature. Most of the applications herein reviewed concern medical imaging procedures, i.e., nuclear medicine, including positron emission tomography and radiology with computerized tomography (XCT). Despite their attractive physical characteristics, their preliminary commercial development has been slowed down in the early 80s because of technical problems, particularly when large arrays were considered, and because of the competition with the more available and less expensive scintillators or xenon chambers which are still mounted in most modern medical imaging systems. Nowadays the characteristics of new materials have allowed the development of restricted but more specific domains of CdTe medical applications i.e. miniaturized nuclear probes dedicated to per-operative tumor detection or ambulatory monitoring of physiological (renal, cardiac) functions and bone absorptiometry using either planar or miniature tomographic systems. Supported by these features and encouraged by the growing competition between ionising and non-ionizing imaging modalities (US, MRI), research work is presently conducted with a view to using CdTe detectors in XCT.

  13. Study of the effect of the stress on CdTe nuclear detectors

    SciTech Connect

    Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

    2013-09-14

    CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

  14. Prompt gamma and neutron detection in BNCT utilizing a CdTe detector.

    PubMed

    Winkler, Alexander; Koivunoro, Hanna; Reijonen, Vappu; Auterinen, Iiro; Savolainen, Sauli

    2015-12-01

    In this work, a novel sensor technology based on CdTe detectors was tested for prompt gamma and neutron detection using boronated targets in (epi)thermal neutron beam at FiR1 research reactor in Espoo, Finland. Dedicated neutron filter structures were omitted to enable simultaneous measurement of both gamma and neutron radiation at low reactor power (2.5 kW). Spectra were collected and analyzed in four different setups in order to study the feasibility of the detector to measure 478 keV prompt gamma photons released from the neutron capture reaction of boron-10. The detector proved to have the required sensitivity to detect and separate the signals from both boron neutron and cadmium neutron capture reactions, which makes it a promising candidate for monitoring the spatial and temporal development of in vivo boron distribution in boron neutron capture therapy. PMID:26249745

  15. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

    NASA Astrophysics Data System (ADS)

    Eisen, Y.; Shor, A.

    1998-02-01

    Among the semiconductor materials of a wide band gap, CdTe and CdZnTe have attracted most attention as room-temperature X-ray and gamma-ray detectors. Suitable CdTe materials for nuclear detectors and, in particular, for spectrometers, have been developed over the past few decades and are mainly grown via the traveling heater method (THM). However, the manufacture of large homogeneous ingots at relatively low cost has not reached yet a proven stage. Cd 1- xZn xTe (CZT) materials, mainly grown via the high-pressure Bridgman (HPB) technique, possess several advantages over CdTe and appear to better approach the practicality of providing large volume X-ray and gamma-ray detectors at moderate costs. Continuing effort is still underway to improve the characteristics of both CdTe and CZT materials in order to achieve reproducible detectors for either low- and high-energy gamma rays. This review paper is divided into three parts: The first part describes different structural designs of detectors to improve their spectroscopic characteristics. These include hemispherical detectors, coplanar strip-electrode detectors and monolithic, two-dimensional segmented electrode arrays with pad sizes smaller than their thickness. This part will also describe various electronic methods to compensate for the poor charge collection of holes. The second part compares the characteristics of planar CdTe and CZT nuclear detectors containing metal contacts. Characteristics include: charge collection efficiencies for both electrons and holes indicated by the mobility-lifetime product, energy resolutions, leakage currents and robustness in field use. The third part is devoted to field uses of these detectors. Those include: X-ray fluorescent spectrometers, large volume spectrometers and a new generation nuclear gamma camera for medical diagnostics based on room-temperature solid-state spectrometers.

  16. Improvement of the energy resolution of pixelated CdTe detectors for applications in 0νββ searches

    NASA Astrophysics Data System (ADS)

    Gleixner, T.; Anton, G.; Filipenko, M.; Seller, P.; Veale, M. C.; Wilson, M. D.; Zang, A.; Michel, T.

    2015-07-01

    Experiments trying to detect 0νββ are very challenging. Their requirements include a good energy resolution and a good detection efficiency. With current fine pixelated CdTe detectors there is a trade off between the energy resolution and the detection efficiency, which limits their performance. It will be shown with simulations that this problem can be mostly negated by analysing the cathode signal which increases the optimal sensor thickness. We will compare different types of fine pixelated CdTe detectors (Timepix, Dosepix, HEXITEC) from this point of view.

  17. Pixelated CdTe detectors to overcome intrinsic limitations of crystal based positron emission mammographs

    NASA Astrophysics Data System (ADS)

    De Lorenzo, G.; Chmeissani, M.; Uzun, D.; Kolstein, M.; Ozsahin, I.; Mikhaylova, E.; Arce, P.; Cañadas, M.; Ariño, G.; Calderón, Y.

    2013-01-01

    A positron emission mammograph (PEM) is an organ dedicated positron emission tomography (PET) scanner for breast cancer detection. State-of-the-art PEMs employing scintillating crystals as detection medium can provide metabolic images of the breast with significantly higher sensitivity and specificity with respect to standard whole body PET scanners. Over the past few years, crystal PEMs have dramatically increased their importance in the diagnosis and treatment of early stage breast cancer. Nevertheless, designs based on scintillators are characterized by an intrinsic deficiency of the depth of interaction (DOI) information from relatively thick crystals constraining the size of the smallest detectable tumor. This work shows how to overcome such intrinsic limitation by substituting scintillating crystals with pixelated CdTe detectors. The proposed novel design is developed within the Voxel Imaging PET (VIP) Pathfinder project and evaluated via Monte Carlo simulation. The volumetric spatial resolution of the VIP-PEM is expected to be up to 6 times better than standard commercial devices with a point spread function of 1 mm full width at half maximum (FWHM) in all directions. Pixelated CdTe detectors can also provide an energy resolution as low as 1.5% FWHM at 511 keV for a virtually pure signal with negligible contribution from scattered events.

  18. Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

    NASA Astrophysics Data System (ADS)

    Gimenez, E. N.; Astromskas, V.; Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N.

    2016-07-01

    A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e- collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system.

  19. Experimental evaluation of a-Se and CdTe flat-panel x-ray detectors for digital radiography and fluoroscopy

    NASA Astrophysics Data System (ADS)

    Adachi, Susumu; Hori, Naoyuki; Sato, Kenji; Tokuda, Satoshi; Sato, Toshiyuki; Uehara, Kazuhiro; Izumi, Yoshihiro; Nagata, Hisashi; Yoshimura, Youji; Yamada, Satoshi

    2000-04-01

    Described are two types of direct-detection flat-panel X-ray detectors utilizing amorphous selenium (a-Se) and cadmium telluride (CdTe). The a-Se detector is fabricated using direct deposition onto a thin film transistor (TFT) substrate, whereas the CdTe detector is fabricated using a novel hybrid method, in which CdTe is pre-deposited onto a glass substrate and then connected to a TFT substrate. The detector array format is 512 X 512 with a pixel pitch of 150 micrometer. The imaging properties of both detectors have been evaluated with respect to X-ray sensitivity, lag, spatial resolution, and detective quantum efficiency (DQE). The modulation transfer functions (MTFs) measured at 1 lp/mm were 0.96 for a- Se and 0.65 for CdTe. The imaging lags after 33 ms were about 4% for a-Se and 22% for CdTe. The DQE values measured at zero spatial frequency were 0.75 for a-Se and 0.22 for CdTe. The results indicate that the a-Se and CdTe detectors have high potential as new digital X-ray imaging devices for both radiography and fluoroscopy.

  20. A pixellated γ-camera based on CdTe detectors clinical interests and performances

    NASA Astrophysics Data System (ADS)

    Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

    2000-07-01

    A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cm×15 cm detection matrix of 2304 CdTe detector elements, 2.83 mm×2.83 mm×2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an

  1. CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

    NASA Technical Reports Server (NTRS)

    Seller, Paul; Wilson, Matthew D.; Veale, Matthew C.; Schneider, Andreas; Gaskin, Jessica; Wilson-Hodge, Colleen; Christe, Steven; Shih, Albert Y.; Inglis, Andrew; Panessa, Marco

    2015-01-01

    The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

  2. Modeling and simulation of Positron Emission Mammography (PEM) based on double-sided CdTe strip detectors

    NASA Astrophysics Data System (ADS)

    Ozsahin, I.; Unlu, M. Z.

    2014-03-01

    Breast cancer is the most common leading cause of cancer death among women. Positron Emission Tomography (PET) Mammography, also known as Positron Emission Mammography (PEM), is a method for imaging primary breast cancer. Over the past few years, PEMs based on scintillation crystals dramatically increased their importance in diagnosis and treatment of early stage breast cancer. However, these detectors have significant limitations like poor energy resolution resulting with false-negative result (missed cancer), and false-positive result which leads to suspecting cancer and suggests an unnecessary biopsy. In this work, a PEM scanner based on CdTe strip detectors is simulated via the Monte Carlo method and evaluated in terms of its spatial resolution, sensitivity, and image quality. The spatial resolution is found to be ~ 1 mm in all three directions. The results also show that CdTe strip detectors based PEM scanner can produce high resolution images for early diagnosis of breast cancer.

  3. Imaging of Ra-223 with a small-pixel CdTe detector

    NASA Astrophysics Data System (ADS)

    Scuffham, J. W.; Pani, S.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.; Cernik, R. J.

    2015-01-01

    Ra-223 Dichloride (Xofigo™) is a promising new radiopharmaceutical offering survival benefit and palliation of painful bone metastases in patients with hormone-refractory prostate cancer [1]. The response to radionuclide therapy and toxicity are directly linked to the absorbed radiation doses to the tumour and organs at risk respectively. Accurate dosimetry necessitates quantitative imaging of the biodistribution and kinetics of the radiopharmaceutical. Although primarily an alpha-emitter, Ra-223 also has some low-abundance X-ray and gamma emissions, which enable imaging of the biodistribution in the patient. However, the low spectral resolution of conventional gamma camera detectors makes in-vivo imaging of Ra-223 challenging. In this work, we present spectra and image data of anthropomorphic phantoms containing Ra-223 acquired with a small-pixel CdTe detector (HEXITEC) [2] with a pinhole collimator. Comparison is made with similar data acquired using a clinical gamma camera. The results demonstrate the advantages of the solid state detector in terms of scatter rejection and quantitative accuracy of the images. However, optimised collimation is needed in order for the sensitivity to rival current clinical systems. As different dosage levels and administration regimens for this drug are explored in current clinical trials, there is a clear need to develop improved imaging technologies that will enable personalised treatments to be designed for patients.

  4. A 10 cm × 10 cm CdTe Spectroscopic Imaging Detector based on the HEXITEC ASIC

    NASA Astrophysics Data System (ADS)

    Wilson, M. D.; Dummott, L.; Duarte, D. D.; Green, F. H.; Pani, S.; Schneider, A.; Scuffham, J. W.; Seller, P.; Veale, M. C.

    2015-10-01

    The 250 μ m pitch 80x80 pixel HEXITEC detector systems have shown that spectroscopic imaging with an energy resolution of <1 keV FWHM per pixel can be readily achieved in the range of 5-200 keV with Al-pixel CdTe biased to -500 V. This level of spectroscopic imaging has a variety of applications but the ability to produce large area detectors remains a barrier to the adoption of this technology. The limited size of ASICs and defect free CdTe wafers dictates that building large area monolithic detectors is not presently a viable option. A 3-side buttable detector module has been developed to cover large areas with arrays of smaller detectors. The detector modules are 20.35 × 20.45 mm with CdTe bump bonded to the HEXITEC ASIC with coverage up to the edge of the module on three sides. The fourth side has a space of 3 mm to allow I/O wire bonds to be made between the ASIC and the edge of a PCB that routes the signals to a connector underneath the active area of the module. The detector modules have been assembled in rows of five modules with a dead space of 170 μ m between each module. Five rows of modules have been assembled in a staggered height array where the wire bonds of one row of modules are covered by the active detector area of a neighboring row. A data acquisition system has been developed to digitise, store and output the 24 Gbit/s data that is generated by the array. The maximum bias magnitude that could be applied to the CdTe detectors from the common voltage source was limited by the worst performing detector module. In this array of detectors a bias of -400 V was used and the detector modules had 93 % of pixels with better than 1.2 keV FWHM at 59.5 keV. An example of K-edge enhanced imaging for mammography was demonstrated. Subtracting images from the events directly above and below the K-edge of the Iodine contrast agent was able to extract the Iodine information from the image of a breast phantom and improve the contrast of the images. This is just

  5. A simulation of a CdTe gamma ray detector based on collection efficiency profiles as determined by lateral IBIC

    NASA Astrophysics Data System (ADS)

    Vittone, E.; Fizzotti, F.; Lo Giudice, A.; Polesello, P.; Manfredotti, C.

    1999-06-01

    Collection efficiency profiles as determined by the ion beam-induced charge (IBIC) technique have been considered to evaluate the spectroscopic performance of a cadmium telluride (CdTe) nuclear radiation detector. The dependence of such profiles on the applied bias voltage and the shaping time are presented and discussed on the basis of a theoretical model, which is also used to evaluate the electron/hole collection lengths profiles. Experimental collection efficiency profiles were used as input data of the "ISIDE" Monte Carlo programme to simulate the CdTe response to gamma rays produced by 57Co. A systematic investigation of such spectra obtained under different detection conditions shows the effects of non constant collection efficiency profiles and ballistic deficit on the energy resolution of the detector.

  6. Development of a CdTe pixel detector with a window comparator ASIC for high energy X-ray applications

    NASA Astrophysics Data System (ADS)

    Hirono, T.; Toyokawa, H.; Furukawa, Y.; Honma, T.; Ikeda, H.; Kawase, M.; Koganezawa, T.; Ohata, T.; Sato, M.; Sato, G.; Takagaki, M.; Takahashi, T.; Watanabe, S.

    2011-09-01

    We have developed a photon-counting-type CdTe pixel detector (SP8-01). SP8-01 was designed as a prototype of a high-energy X-ray imaging detector for experiments using synchrotron radiation. SP8-01 has a CdTe sensor of 500 μm thickness, which has an absorption efficiency of almost 100% up to 50 keV and 45% even at 100 keV. A full-custom application specific integrated circuit (ASIC) was designed as a readout circuit of SP8-01, which is equipped with a window-type discriminator. The upper discriminator realizes a low-background measurement, because X-ray beams from the monochromator contain higher-order components beside the fundamental X-rays in general. ASIC chips were fabricated with a TSMC 0.25 μm CMOS process, and CdTe sensors were bump-bonded to the ASIC chips by a gold-stud bonding technique. Beam tests were performed at SPring-8. SP8-01 detected X-rays up to 120 keV. The capability of SP8-01 as an imaging detector for high-energy X-ray synchrotron radiation was evaluated with its performance characteristics.

  7. Design and optimization of large area thin-film CdTe detector for radiation therapy imaging applications

    SciTech Connect

    Parsai, E. Ishmael; Shvydka, Diana; Kang, Jun

    2010-08-15

    Purpose: The authors investigate performance of thin-film cadmium telluride (CdTe) in detecting high-energy (6 MV) x rays. The utilization of this material has become technologically feasible only in recent years due to significant development in large area photovoltaic applications. Methods: The CdTe film is combined with a metal plate, facilitating conversion of incoming photons into secondary electrons. The system modeling is based on the Monte Carlo simulations performed to determine the optimized CdTe layer thickness in combination with various converter materials. Results: The authors establish a range of optimal parameters producing the highest DQE due to energy absorption, as well as signal and noise spatial spreading. The authors also analyze the influence of the patient scatter on image formation for a set of detector configurations. The results of absorbed energy simulation are used in device operation modeling to predict the detector output signal. Finally, the authors verify modeling results experimentally for the lowest considered device thickness. Conclusions: The proposed CdTe-based large area thin-film detector has a potential of becoming an efficient low-cost electronic portal imaging device for radiation therapy applications.

  8. CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

    NASA Astrophysics Data System (ADS)

    Eisen, Y.; Shor, A.; Mardor, I.

    1999-06-01

    CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems.

  9. Charge collection efficiency and space charge formation in CdTe gamma and X-ray detectors

    NASA Astrophysics Data System (ADS)

    Matz, R.; Weidner, M.

    1998-02-01

    A new extended model for the charge collection efficiency in CdTe gamma and X ray detectors is presented which allows to derive from apparent experimental gamma spectra of a quasi-monochromatic source, an 241Am source in the present case, not only the μρ products of electrons and holes individually but also the sign, spatial distribution, and temporal evolution of the net space charge accumulated in the detector. Resistive CdTe and CdZnTe as well as CdTe Schottky detectors are studied. While the resistive type is stable in time and exhibits higher μτ products, the Schottky type shows space charge accumulation which approaches saturation after about 1 h at several 10 11 cm -3. This is attributed to efficient majority carrier depletion, Fermi level shift, and trap filling. Resistive detectors thus appear optimized to the needs of gamma spectroscopy even at low bias voltage, while Schottky types need higher bias to overcome the space charge. They are suited to both, gamma spectroscopy and X-ray detection in analog current mode, where they operate more stably due ρo the higher bias. From the point of view of materials characterization, gamma spectroscopy with Schottky detectors probes and reveals the trap density near the Fermi level (several 10 12 cm -3 eV -1). We find a basically homogeneous spatial distribution suggesting the trap origin being in crystal growth rather than surface processing. Capture of photogenerated charges in traps is detrimental for current-mode operation under high X-ray flux because delayed emission from traps limits the detector's ability to respond to fast signal changes.

  10. Monte Carlo simulation of the response functions of CdTe detectors to be applied in x-ray spectroscopy.

    PubMed

    Tomal, A; Santos, J C; Costa, P R; Lopez Gonzales, A H; Poletti, M E

    2015-06-01

    In this work, the energy response functions of a CdTe detector were obtained by Monte Carlo (MC) simulation in the energy range from 5 to 160keV, using the PENELOPE code. In the response calculations the carrier transport features and the detector resolution were included. The computed energy response function was validated through comparison with experimental results obtained with (241)Am and (152)Eu sources. In order to investigate the influence of the correction by the detector response at diagnostic energy range, x-ray spectra were measured using a CdTe detector (model XR-100T, Amptek), and then corrected by the energy response of the detector using the stripping procedure. Results showed that the CdTe exhibits good energy response at low energies (below 40keV), showing only small distortions on the measured spectra. For energies below about 80keV, the contribution of the escape of Cd- and Te-K x-rays produce significant distortions on the measured x-ray spectra. For higher energies, the most important correction is the detector efficiency and the carrier trapping effects. The results showed that, after correction by the energy response, the measured spectra are in good agreement with those provided by a theoretical model of the literature. Finally, our results showed that the detailed knowledge of the response function and a proper correction procedure are fundamental for achieving more accurate spectra from which quality parameters (i.e., half-value layer and homogeneity coefficient) can be determined. PMID:25599872

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  12. A study on friction stir welding of 12mm thick aluminum alloy plates

    NASA Astrophysics Data System (ADS)

    Kumar, Deepati Anil; Biswas, Pankaj; Tikader, Sujoy; Mahapatra, M. M.; Mandal, N. R.

    2013-12-01

    Most of the investigations regarding friction stir welding (FSW) of aluminum alloy plates have been limited to about 5 to 6 mm thick plates. In prior work conducted the various aspects concerning the process parameters and the FSW tool geometry were studied utilizing friction stir welding of 12 mm thick commercial grade aluminum alloy. Two different simple-to-manufacture tool geometries were used. The effect of varying welding parameters and dwell time of FSW tool on mechanical properties and weld quality was examined. It was observed that in order to achieve a defect free welding on such thick aluminum alloy plates, tool having trapezoidal pin geometry was suitable. Adequate tensile strength and ductility can be achieved utilizing a combination of high tool rotational speed of about 2000 r/min and low speed of welding around 28 mm/min. At very low and high dwell time the ductility of welded joints are reduced significantly.

  13. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    NASA Astrophysics Data System (ADS)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  14. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors.

    PubMed

    Cassol, F; Portal, L; Graber-Bolis, J; Perez-Ponce, H; Dupont, M; Kronland, C; Boursier, Y; Blanc, N; Bompard, F; Boudet, N; Buton, C; Clémens, J C; Dawiec, A; Debarbieux, F; Delpierre, P; Hustache, S; Vigeolas, E; Morel, C

    2015-07-21

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. PMID:26133567

  15. Estimation of mammary gland composition using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Ihori, Akiko; Okamoto, Chizuru; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Nakajima, Ai; Kato, Misa; Kodera, Yoshie

    2016-03-01

    Energy resolved photon-counting mammography is a new technology, which counts the number of photons that passes through an object, and presents it as a pixel value in an image of the object. Silicon semiconductor detectors are currently used in commercial mammography. However, the disadvantage of silicon is the low absorption efficiency for high X-ray energies. A cadmium telluride (CdTe) series detector has a high absorption efficiency over a wide energy range. In this study, we proposed a method to estimate the composition of the mammary gland using a CdTe series detector as a photon-counting detector. The fact that the detection rate of breast cancer in mammography is affected by mammary gland composition is now widely accepted. Assessment of composition of the mammary gland has important implications. An important advantage of our proposed technique is its ability to discriminate photons using three energy bins. We designed the CdTe series detector system using the MATLAB simulation software. The phantom contains nine regions with the ratio of glandular tissue and adipose varying in increments of 10%. The attenuation coefficient for each bin's energy was calculated from the number of input and output photons possessed by each. The evaluation results obtained by plotting the attenuation coefficient μ in a three-dimensional (3D) scatter plot show that the plots had a regular composition order congruent with that of the mammary gland. Consequently, we believe that our proposed method can be used to estimate the composition of the mammary gland.

  16. Characterization measurement of a thick CdTe detector for BNCT-SPECT - detection efficiency and energy resolution.

    PubMed

    Murata, Isao; Nakamura, Soichiro; Manabe, Masanobu; Miyamaru, Hiroyuki; Kato, Itsuro

    2014-06-01

    Author׳s group is carrying out development of BNCT-SPECT with CdTe device, which monitors the therapy effect of BNCT in real-time. From the design calculations, the dimensions were fixed to 1.5×2×30mm(3). For the collimator it was confirmed that it would have a good spatial resolution and simultaneously the number of counts would be acceptably large. After producing the CdTe crystal, the characterization measurement was carried out. For the detection efficiency an excellent agreement between calculation and measurement was obtained. Also, the detector has a very good energy resolution so that gamma-rays of 478keV and 511keV could be distinguished in the spectrum. PMID:24581600

  17. DPIX, an assembly of 6400 CdTe detectors for gamma-ray bursts detection with ECLAIRs

    NASA Astrophysics Data System (ADS)

    Remoué, N.; Barret, D.; Mandrou, P.; Lacombe, K.; Pons, R.; Amoros, C.; Landé, J.; Rambaud, D.; Dezalay, J. P.; Narbonne, J.; Soulié, Y.; Marty, W.; Ramon, P.; Rouaix, G.; Houret, B.; Limousin, O.; Gevin, O.; Lugiez, F.; Penquer, A.

    2008-07-01

    The French instrument ECLAIRs, to be part of the French and Chinese SVOM mission for the study of gamma-ray bursts (GRBs), will detect bursts between 4 and 250 keV. Its detector plane is an assembly of 200 elementary detection modules (XRDPIX) equipped with 32 Schottky CdTe detectors, produced by ACRORAD in Japan. The innovative concept of XRDPIX will enable a 4 keV low-energy threshold to be achieved. After introducing the SVOM payload, the ECLAIRs instrument and its detector plane, this paper presents the results of the performance evaluation of a first set of 500 detectors, and briefly describes the tests foreseen for the first XRDPIX prototypes.

  18. Discrimination between normal breast tissue and tumor tissue using CdTe series detector developed for photon-counting mammography

    NASA Astrophysics Data System (ADS)

    Okamoto, Chizuru; Ihori, Akiko; Yamakawa, Tsutomu; Yamamoto, Shuichiro; Okada, Masahiro; Kato, Misa; Nakajima, Ai; Kodera, Yoshie

    2016-03-01

    We propose a new mammography system using a cadmium telluride (CdTe) series photon-counting detector, having high absorption efficiency over a wide energy range. In a previous study, we showed that the use of high X-ray energy in digital mammography is useful from the viewpoint of exposure dose and image quality. In addition, the CdTe series detector can acquire X-ray spectrum information following transmission through a subject. This study focused on the tissue composition identified using spectral information obtained by a new photon-counting detector. Normal breast tissue consists entirely of adipose and glandular tissues. However, it is very difficult to find tumor tissue in the region of glandular tissue via a conventional mammogram, especially in dense breast because the attenuation coefficients of glandular tissue and tumor tissue are very close. As a fundamental examination, we considered a simulation phantom and showed the difference between normal breast tissue and tumor tissue of various thicknesses in a three-dimensional (3D) scatter plot. We were able to discriminate between both types of tissues. In addition, there was a tendency for the distribution to depend on the thickness of the tumor tissue. Thinner tumor tissues were shown to be closer in appearance to normal breast tissue. This study also demonstrated that the difference between these tissues could be made obvious by using a CdTe series detector. We believe that this differentiation is important, and therefore, expect this technology to be applied to new tumor detection systems in the future.

  19. Design of a high-resolution small-animal SPECT-CT system sharing a CdTe semiconductor detector

    NASA Astrophysics Data System (ADS)

    Ryu, Hyun-Ju; Lee, Young-Jin; Lee, Seung-Wan; Cho, Hyo-Min; Choi, Yu-Na; Kim, Hee-Joung

    2012-07-01

    A single photon emission computed tomography (SPECT) system with a co-registered X-y computed tomography (CT) system allows the convergence of functional information and morphologic information. The localization of radiopharmaceuticals on a SPECT can be enhanced by combining the SPECT with an anatomical modality, such as X-ray CT. Gamma-ray imaging for nuclear medicine devices and X-ray imaging systems for diagnostics has recently been developed based on semiconductor detectors, and semiconductor detector materials such as cadmium telluride (CdTe) or cadmium zinc telluride (CZT) are available for both X-ray and gamma-ray systems for small-animal imaging. CdTe or CZT detectors provide strong absorption and high detection efficiency of high energy X-ray and gamma-ray photons because of their large atomic numbers. In this study, a pinhole collimator SPECT system sharing a cadmium telluride (CdTe) detector with a CT was designed. The GEANT4 application for tomographic emission (GATE) v.6.1 was used for the simulation. The pinhole collimator was designed to obtain a high spatial resolution of the SPECT system. The acquisition time for each projection was 40 seconds, and 60 projections were obtained for tomographic image acquisition. The reconstruction was performed using ordered subset expectation maximization (OS-EM) algorithms. The sensitivity and the spatial resolution were measured on the GATE simulation to evaluate the system characteristics. The spatial resolution of the system calculated from the FWHM of Gaussian fitted PSF curve was 0.69 mm, and the sensitivity of the system was measured to be 0.354 cps/kBq by using a Tc-99m point source of 1 MBq for 800 seconds. A phantom study was performed to verify the design of the dual imaging modality system. The system will be built as designed, and it can be applied as a pre-clinical imaging system.

  20. Holographic characteristics of a 1-mm-thick photopolymer to be used in holographic memories

    NASA Astrophysics Data System (ADS)

    Ortun~O, Manuel; Gallego, Sergi; García, Celia; Neipp, Cristian; Pascual, Inmaculada

    2003-12-01

    Poly(vinyl alcohol-acrylamide) photopolymers are materials of interest in the field of digital information storage (holographic memories). We analyzed the behavior of a 1-mm-thick photopolymer. Using a standard holographic setup, we recorded unslanted diffraction gratings. The material has high angular selectivity (0.4°), good sensitivity (88 mJ/cm2), and small losses caused by absorption and scattering of light. It also has a high maximum diffraction efficiency (70%). A significant induction period was seen in the material. The authors hypothesize that, during most of this induction period, polymerization does in fact take place but is not reflected in the appearance of the diffracted light until a certain threshold value of exposure is reached.

  1. Concentration of uncompensated impurities as a key parameter of CdTe and CdZnTe crystals for Schottky diode x\\ssty{/}γ-ray detectors

    NASA Astrophysics Data System (ADS)

    Kosyachenko, L. A.; Lambropoulos, C. P.; Aoki, T.; Dieguez, E.; Fiederle, M.; Loukas, D.; Sklyarchuk, O. V.; Maslyanchuk, O. L.; Grushko, E. V.; Sklyarchuk, V. M.; Crocco, J.; Bensalah, H.

    2012-01-01

    In this paper we report on the strong impact of the concentration of uncompensated impurities on the detection efficiency of CdTe and Cd0.9Zn0.1Te Schottky diodes. The results of our study explain the observed poor detection properties of some Cd0.9Zn0.1Te detectors with resistivity and lifetime of carriers comparable to those of good CdTe detectors. We show that the concentration of uncompensated impurities in a highly efficient CdTe Schottky diode detector is several orders of magnitude higher than that of a CdZnTe, which does not register the gamma spectra of commonly used isotopes (59-662 keV) by using photoelectric measurements. The significant difference of the concentration of uncompensated impurities between CdTe and Cd0.9Zn0.1Te crystals is confirmed by our study of the temperature change of the resistivity and of the Fermi level energy. The degree of compensation of the donor complex, responsible for the electrical conductivity of the material, is much lower in the CdTe crystal compared to that in the Cd0.9Zn0.1Te crystal. The calculations of the detection efficiency of x/γ-radiation by a Schottky diode result in a dependence on the concentration of uncompensated impurities described by a curve with a pronounced maximum. The position of this maximum occurs at a concentration of uncompensated impurities which ranges from 3 × 1010 to 3 × 1012 cm-3 depending on the registered photon energy of x/γ-rays and on the lifetime of the charge carriers. Our measurements and calculations lead to the conclusion that the concentration of uncompensated impurities in this range is a necessary condition for the effective operation of x- and γ-ray Schottky diode detectors based on CdTe and Cd1-xZnxTe crystals.

  2. Modelling and 3D optimisation of CdTe pixels detector array geometry - Extension to small pixels

    NASA Astrophysics Data System (ADS)

    Zumbiehl, A.; Hage-Ali, M.; Fougeres, P.; Koebel, J. M.; Regal, R.; Rit, C.; Ayoub, M.; Siffert, P.

    2001-08-01

    CdTe and CdZnTe pixel detectors offer great interest for many applications, especially for medical and industrial imaging. Up to now, the material, generally, used and investigated for pixel arrays was CZT (Hamel et al., IEEE Trans. Nucl. Sci. 43 (3) (1996) 1422; Barrett et al., Phys. Rev. Lett. 75 (1) (1995) 156; Bennett et al., Nucl. Instr. and Meth. A 392 (1997) 260; Eskin et al., J. Appl. Phys. 85 (2) (1999) 647; Brunett et al., J. Appl. Phys. 86 (7) (1999) 3926; Luke, Nucl. Instr. and Meth. A 380 (1996) 232), but cadmium telluride can also be an appropriate choice, as shown here. However, we clearly demonstrate here that the optimal pixel configuration is highly dependent on the electrical transport properties of the material. Depending on the field of primary interest, either energy resolution or counting rate efficiency in the photopeak, the geometry for each case has to be optimised. For that purpose, we have developed a calculation of the signal induced onto the pixel. Two distinct parts are used: after showing our approach for the weighting potential calculation, we present our results performed by a "pseudo-Monte Carlo" simulation. Results are supported by a few experimental comparisons. We argue about the optimum sizes with clarifying the problems caused by too small and too large pixel sizes. The study field is chosen to be vast, i.e. pixel size to detector thickness ratios ( W/ L) of 1/8-1, and detector thickness of 1.0-8.0 mm. In addition, several electrical transport properties are used. Since efficiency is often of primary interest, thick detectors could be very attractive, which are shown to be really feasible even on CdTe.

  3. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior

    PubMed Central

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  4. Energy Calibration of a CdTe Photon Counting Spectral Detector with Consideration of its Non-Convergent Behavior.

    PubMed

    Lee, Jeong Seok; Kang, Dong-Goo; Jin, Seung Oh; Kim, Insoo; Lee, Soo Yeol

    2016-01-01

    Fast and accurate energy calibration of photon counting spectral detectors (PCSDs) is essential for their biomedical applications to identify and characterize bio-components or contrast agents in tissues. Using the x-ray tube voltage as a reference for energy calibration is known to be an efficient method, but there has been no consideration in the energy calibration of non-convergent behavior of PCSDs. We observed that a single pixel mode (SPM) CdTe PCSD based on Medipix-2 shows some non-convergent behaviors in turning off the detector elements when a high enough threshold is applied to the comparator that produces a binary photon count pulse. More specifically, the detector elements are supposed to stop producing photon count pulses once the threshold reaches a point of the highest photon energy determined by the tube voltage. However, as the x-ray exposure time increases, the threshold giving 50% of off pixels also increases without converging to a point. We established a method to take account of the non-convergent behavior in the energy calibration. With the threshold-to-photon energy mapping function established by the proposed method, we could better identify iodine component in a phantom consisting of iodine and other components. PMID:27077856

  5. Analysis of stable tearing in a 7.6 mm thick aluminum plate alloy

    SciTech Connect

    Dawicke, D.S.; Piascik, R.S.; Newman, J.C. Jr.

    1997-12-31

    The behavior of a 7.6 mm thick 2000 series aluminum plate alloy was investigated. Fracture tests were conducted on 304.8 mm and 101.6 mm wide M(T) specimens and 152.4 mm and 101.6 C(T) specimens. Two-dimensional and three-dimensional, elastic-plastic finite element simulations used the critical CTOA criterion to simulate the fracture behavior. A plane strain core was used in the two-dimensional analyses to approximate the three-dimensional constraint. The results from this study indicate: (A) The three-dimensional finite element analyses required a critical CTOA of 5.75{degree} to simulate the fracture behavior of the 101.6 mm and 304.8 mm wide M(T) specimen with side grooves. This angle was about the upper limit of the surface CTOA measurements. (B) The three-dimensional finite element analyses required a critical CTOA of 3.6{degree} to simulate the fracture behavior of the 101.6 mm C(T) specimen with side grooves. This angle was about the upper limit of the microtopography through-thickness CTOA measurements. (C) A plane strain core height of PSC = 4 mm was required for the two-dimensional analyses to match the fracture behavior obtained from the three-dimensional analyses. This height agreed with the distance that a three-dimensional analysis indicated was the start of plane strain like behavior. (D) For large M(T) specimens (W > 1,000 mm) the two-dimensional plane strain core analysis predicted a failure stress between the plane stress and plane strain conditions and provided a good approximation of the three-dimensional analyses. (E) The experimental measurements and analytical results show good agreement when the specimens sizes meet the uncracked ligament to thickness ratio (b/B > 4) determined by Newman et al. This indicates that there is a minimum size laboratory specimen that can be used to determine the material behavior needed to predict fracture in large specimens and structures.

  6. Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Krishna, Ramesh M.; Pak, Rahmi O.; Mannan, Mohammad A.

    2014-09-01

    CdTe and Cd0.9Zn0.1Te (CZT) crystals have been studied extensively for various applications including x- and γ-ray imaging and high energy radiation detectors. The crystals were grown from zone refined ultra-pure precursor materials using a vertical Bridgman furnace. The growth process has been monitored, controlled, and optimized by a computer simulation and modeling program developed in our laboratory. The grown crystals were thoroughly characterized after cutting wafers from the ingots and processed by chemo-mechanical polishing (CMP). The infrared (IR) transmission images of the post-treated CdTe and CZT crystals showed average Te inclusion size of ~10 μm for CdTe and ~8 μm for CZT crystal. The etch pit density was ≤ 5×104 cm-2 for CdTe and ≤ 3×104 cm-2 for CZT. Various planar and Frisch collar detectors were fabricated and evaluated. From the current-voltage measurements, the electrical resistivity was estimated to be ~ 1.5×1010 Ω-cm for CdTe and 2-5×1011 Ω-cm for CZT. The Hecht analysis of electron and hole mobility-lifetime products (μτe and μτh) showed μτe = 2×10-3 cm2/V (μτh = 8×10-5 cm2/V) and 3-6×10-3 cm2/V (μτh = 4- 6×10-5 cm2/V) for CdTe and CZT, respectively. Detectors in single pixel, Frisch collar, and coplanar grid geometries were fabricated. Detectors in Frisch grid and guard-ring configuration were found to exhibit energy resolution of 1.4% and 2.6 %, respectively, for 662 keV gamma rays. Assessments of the detector performance have been carried out also using 241Am (60 keV) showing energy resolution of 4.2% FWHM.

  7. Digital performance improvements of a CdTe pixel detector for high flux energy-resolved X-ray imaging

    NASA Astrophysics Data System (ADS)

    Abbene, L.; Gerardi, G.; Principato, F.

    2015-03-01

    Photon counting detectors with energy resolving capabilities are desired for high flux X-ray imaging. In this work, we present the performance of a pixelated Schottky Al/p-CdTe/Pt detector (4×4) coupled to a custom-designed digital readout electronics for high flux measurements. The detector (4×4×2 mm3) has an anode layout based on an array of 16 pixels with a geometric pitch of 1 mm (pixel size of 0.6 mm). The 4-channel readout electronics is able to continuously digitize and process the signals from each pixel, performing multi-parameter analysis (event arrival time, pulse shape, pulse height, pulse time width, etc.) even at high fluxes and at different throughput and energy resolution conditions. The spectroscopic response of the system to monochromatic X-ray sources, at both low and high rates, is presented with particular attention to the mitigation of some typical spectral distortions (pile-up, baseline shifts and charge sharing). At a photon counting rate of 520 kcps/pixel, the system exhibits an energy resolution (FWHM at 59.5 keV) of 4.6%, 7.1% and 9% at throughputs of 0.9%, 16% and 82%, respectively. Measurements of Ag-target X-ray spectra also show the ability of the system to perform accurate estimation of the input counting rate up to 1.1 Mcps/pixel. The aim of this work is to point out, beside the appealing properties of CdTe detectors, the benefits of the digital approach in the development of high-performance energy resolved photon counting (ERPC) systems for high flux X-ray imaging.

  8. A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

    2015-01-01

    We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μW. In acquisition mode, the total power consumption of every pixel is 200 μW. An equivalent noise charge (ENC) of 160 e−RMS at maximum gain and negative polarity conditions has been measured at room temperature. PMID:26744545

  9. Laser-Assisted Stir Welding of 25-mm-Thick HSLA-65 Plate

    NASA Astrophysics Data System (ADS)

    Williamson, Keith M.

    2002-12-01

    Laser-assisted stir welding is a hybrid process that combines energy from a laser with functional heating and mechanical energy to join materials in the solid state. The technology is an adaptation of friction stir welding which is particularly suited for joining thick plates. Aluminum plates up to 75 mm thick have been successfully joined using friction stir welding. Since joining occurs in the solid state, stir technology offers the capability for fabricating full penetration joints in thick plates with better mechanical properties and less weld distortion than is possible by fusion processes. Currently friction stir welding is being used in several industries to improve productivity, reduce weight, and increase the strength of welded structures. Examples include: (a) the aircraft/aerospace industry where stir technology is currently being used to fabricate the space shuttle's external tank as well as components of the Delta family of rockets; (b) the shipping industry where container manufacturers are using stir technology to produce lighter containers with more payload capacity; and (c) the oil industry where offshore platform manufactures are using automated stir welding plants to fabricate large panels and structures up to 16 meters long with widths as required. In all these cases, stir technology has been restricted to aluminum alloys; however, stainless and HSLA 65 steels have been recently stir welded with friction as the primary heat source. One of the difficulties in adapting stir welding to steel is tool wear aggravated by the high tool rubbing velocities needed to provide frictional heat input into the material. Early work showed that the tool shoulder reached temperatures above 1000 C and the weld seam behind the tool stayed within this temperature range for up to 25 mm behind the tool. Cross sections of stir welded samples showed that the heat-affected zone is relatively wide and follows the profile of the tool shoulder. Besides minimizing the tool

  10. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    PubMed Central

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2014-01-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  11. Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

    NASA Astrophysics Data System (ADS)

    Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

    2015-06-01

    We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

  12. Simulation of the Expected Performance of a Seamless Scanner for Brain PET Based on Highly Pixelated CdTe Detectors

    PubMed Central

    Mikhaylova, Ekaterina; De Lorenzo, Gianluca; Chmeissani, Mokhtar; Kolstein, Machiel; Cañadas, Mario; Arce, Pedro; Calderón, Yonatan; Uzun, Dilber; Ariño, Gerard; Macias-Montero, José Gabriel; Martinez, Ricardo; Puigdengoles, Carles; Cabruja, Enric

    2014-01-01

    The aim of this work is the evaluation of the design for a nonconventional PET scanner, the voxel imaging PET (VIP), based on pixelated room-temperature CdTe detectors yielding a true 3-D impact point with a density of 450 channels cm3, for a total 6 336 000 channels in a seamless ring shaped volume. The system is simulated and evaluated following the prescriptions of the NEMA NU 2-2001 and the NEMA NU 4-2008 standards. Results show that the excellent energy resolution of the CdTe detectors (1.6% for 511 keV photons), together with the small voxel pitch (1×1×2 mm3), and the crack-free ring geometry, give the design the potential to overcome the current limitations of PET scanners and to approach the intrinsic image resolution limits set by physics. The VIP is expected to reach a competitive sensitivity and a superior signal purity with respect to values commonly quoted for state-of-the-art scintillating crystal PETs. The system can provide 14 cps/kBq with a scatter fraction of 3.95% and 21 cps/kBq with a scatter fraction of 0.73% according to NEMA NU 2-2001 and NEMA NU 4-2008, respectively. The calculated NEC curve has a peak value of 122 kcps at 5.3 kBq/mL for NEMA NU 2-2001 and 908 kcps at 1.6 MBq/mL for NEMA NU 4-2008. The proposed scanner can achieve an image resolution of ~ 1 mm full-width at half-maximum in all directions. The virtually noise-free data sample leads to direct positive impact on the quality of the reconstructed images. As a consequence, high-quality high-resolution images can be obtained with significantly lower number of events compared to conventional scanners. Overall, simulation results suggest the VIP scanner can be operated either at normal dose for fast scanning and high patient throughput, or at low dose to decrease the patient radioactivity exposure. The design evaluation presented in this work is driving the development and the optimization of a fully operative prototype to prove the feasibility of the VIP concept. PMID:24108750

  13. High-rate x-ray spectroscopy in mammography with a CdTe detector: A digital pulse processing approach

    SciTech Connect

    Abbene, L.; Gerardi, G.; Principato, F.; Del Sordo, S.; Ienzi, R.; Raso, G.

    2010-12-15

    Purpose:Direct measurement of mammographic x-ray spectra under clinical conditions is a difficult task due to the high fluence rate of the x-ray beams as well as the limits in the development of high resolution detection systems in a high counting rate environment. In this work we present a detection system, based on a CdTe detector and an innovative digital pulse processing (DPP) system, for high-rate x-ray spectroscopy in mammography. Methods: The DPP system performs a digital pile-up inspection and a digital pulse height analysis of the detector signals, digitized through a 14-bit, 100 MHz digitizer, for x-ray spectroscopy even at high photon counting rates. We investigated on the response of the digital detection system both at low (150 cps) and at high photon counting rates (up to 500 kcps) by using monoenergetic x-ray sources and a nonclinical molybdenum anode x-ray tube. Clinical molybdenum x-ray spectrum measurements were also performed by using a pinhole collimator and a custom alignment device. Results: The detection system shows excellent performance up to 512 kcps with an energy resolution of 4.08% FWHM at 22.1 keV. Despite the high photon counting rate (up to 453 kcps), the molybdenum x-ray spectra, measured under clinical conditions, are characterized by a low number of pile-up events. The agreement between the attenuation curves and the half value layer values, obtained from the measured spectra, simulated spectra, and from the exposure values directly measured with an ionization chamber, also shows the accuracy of the measurements. Conclusions: These results make the proposed detection system a very attractive tool for both laboratory research and advanced quality controls in mammography.

  14. Model-based pulse shape correction for CdTe detectors

    NASA Astrophysics Data System (ADS)

    Bargholtz, Chr.; Fumero, E.; Mårtensson, L.

    1999-02-01

    We present a systematic method to improve energy resolution of CdTe-detector systems with full control of the efficiency. Sampled pulses and multiple amplifier data are fitted by a model of the pulse shape including the deposited energy and the interaction point within the detector as parameters. We show the decisive improvements of spectral resolution and photo-peak efficiency that is obtained without distortion of spectral shape. The information concerning the interaction depth of individual events can be used to discriminate between beta particles and gamma quanta.

  15. The use of Schottky CdTe detectors for high-energy astronomy: application to the detection plane of the instrument SVOM/ECLAIRs

    NASA Astrophysics Data System (ADS)

    Nasser, G.; Godet, O.; Atteia, J.-L.; Amoros, C.; Barret, D.; Bordon, S.; Cordier, B.; Gevin, O.; Gonzalez, F.; Houret, B.; Lacombe, K.; Mandrou, P.; Marty, W.; Mercier, K.; Pons, R.; Rambaud, D.; Ramon, P.; Rouaix, G.; Waegebaert, V.

    2014-07-01

    Ohmic CdZnTe and CdTe detectors have been successfully used in high-energy missions such as IBIS on-board INTEGRAL and the Swift-BAT in the past two decades. Such detectors provide very good quantum efficiency in the hard X-ray band. For the future generation of hard X-ray coded mask detectors, a higher sensitivity will be required. A way to achieve this is to increase the effective area of the pixilated detection plane, to change the mask pattern and/or the properties of the semi-conductors paving the detection plane. For the future Chinese-French Gamma-ray burst mission SVOM, the GRB trigger camera ECLAIRs will make use of a new type of high-energy detectors, the Schottky CdTe detectors. Such detectors, when reversely biased, are known to present very low leakage current, resulting in lower values of the low-energy threshold (down to 4 keV or less) than for previous missions (i.e. > 10 keV for the Swift-BAT and INTEGRAL/IBIS). Such low values will enable ECLAIRs with a moderate geometrical area of 1024 cm2 and a low-energy threshold of 4 keV to be more sensitive to high-redshift GRBs (emitting mainly in X-rays) than the Swift-BAT with a higher effective area and low-energy threshold. However, the spectral performance of such detectors are known to degrade over time, once polarized, due to the polarization effect that strongly depends on the temperature and the bias voltage applied to the detectors. In this paper, we present an intensive study of the properties of Schottky CdTe detectors as used on SVOM/ECLAIRs such as I-V characteristics, polarization effect, activation energy and low temperature annealing effects. We discuss the implications of these measurements on the use of this type of detectors in future high-energy instruments.

  16. Imaging and spectral performance of CdTe double-sided strip detectors for the hard x-ray imager onboard ASTRO-H

    NASA Astrophysics Data System (ADS)

    Hagino, Kouichi; Odaka, Hirokazu; Sato, Goro; Watanabe, Shin; Takeda, Shin'ichiro; Kokubun, Motohide; Fukuyama, Taro; Saito, Shinya; Sato, Tamotsu; Ichinohe, Yuto; Takahashi, Tadayuki; Nakano, Toshio; Nakazawa, Kazuhiro; Makishima, Kazuo; Tajima, Hiroyasu; Tanaka, Takaaki; Ishibashi, Kazunori; Miyazawa, Takuya; Sakai, Michito; Sakanobe, Karin; Kato, Hiroyoshi; Takizawa, Shunya; Uesugi, Kentaro

    2012-09-01

    The imaging and spectral performance of CdTe double-sided strip detectors (CdTe-DSDs) was evaluated for the ASTRO-H mission. The charcterized CdTe-DSDs have a strip pitch of 0.25 mm, an imaging area of 3.2 cm × 3.2 cm and a thickness of 0.75 mm. The detector was successfully operated at a temperature of -20°C and with an applied bias voltage of 250 V. By using two-strip events as well as one-strip events for the event reconstruction, a good energy resolution of 2.0 keV at 59.5 keV and a sub-strip spatial resolution was achieved. The hard X-ray and gamma-ray response of CdTe-DSDs is complex due to the properties of CdTe and the small pixel effect. Therefore, one of the issues to investigate is the response of the CdTe-DSD. In order to investigate the spatial dependence of the detector response, we performed fine beam scan experiments at SPring-8, a synchrotron radiation facility. From these experiments, the depth structure of the electric field was determined as well as properties of carriers in the detector and successfully reproduced the experimental data with simulated spectra.

  17. Signal formation and decay in CdTe x-ray detectors under intense irradiation.

    PubMed

    Jahnke, A; Matz, R

    1999-01-01

    The response of Cd(Zn)Te Schottky and resistive detectors to intense x-rays is investigated in a commercial computed tomography (CT) system to assess their potential for medical diagnostics. To describe their signal height, responsivity, signal-to-noise ratio (SNR), and detective quantum efficiency the devices are modeled as solid-state ionization chambers with spatially varying electric field and charge collection efficiency. The thicknesses and pixel areas of the discrete detector elements are 0.5-2 mm and a few mm2, respectively. The incident spectrum extends from 26 to 120 keV and comprises 10(10) quanta/s cm2. It photogenerates a carrier concentration in the semiconductor that is two to three orders of magnitude above the intrinsic concentration, but remains to a similar extent below the charge densities on the device electrodes. Stable linear operation is achieved with the Schottky-type devices under high bias. Their behavior can be modeled well if negatively charged near-midgap bulk defects with a concentration of 10(11)-10(13) cm-3 are assumed. The bulk defects explain the amount and time constant (about 100 ms) of the detrapping current measured after x-ray pulses (afterglow). To avoid screening by the trapped space charge the bias voltage should exceed 100(V) x [detector thickness/mm]2. Dark currents are of the order of the generation-recombination current, i.e., 300 pA/mm3 detector volume. With proper device design the signal height approaches the theoretical maximum of 0.2 A/W. This high responsivity, however, is not exploited in CT since the SNR is determined here by the incident quantum noise. As a consequence of the detrapping current, the response speed does not meet CT requirements. A medium-term effort for crystal growth appears necessary to achieve the required reduction of the trap density by an order of magnitude. Scintillation based detectors are, therefore, still preferred in fast operating medical diagnostic systems. PMID:9949396

  18. Hard X-ray and gamma-ray detector for ASTRO-H based on Si and CdTe imaging sensors

    NASA Astrophysics Data System (ADS)

    Hxi/Sgd Team; Kokubun, M.; Watanabe, S.; Nakazawa, K.; Tajima, H.; Fukazawa, Y.; Takahashi, T.; Kataoka, J.; Kamae, T.; Katagiri, H.; Madejski, G. M.; Makishima, K.; Mizuno, T.; Ohno, M.; Sato, R.; Takahashi, H.; Tanaka, T.; Tashiro, M.; Terada, Y.; Yamaoka, K.; HXI/SGD Team

    2010-11-01

    We have been developing a hard X-ray imager and soft gamma-ray detector as on board instruments of the ASTRO-H mission. The Hard X-ray Imager (HXI) is one of the three focal plane detectors of ASTRO-H, which is aimed to realize the focusing imaging of hard X-ray photons in combination with hard X-ray telescopes. By use of the hybrid structure composed of double-sided silicon strip detectors and a cadmium telluride strip detector, it fully covers the energy range up to 80 keV with a high quantum efficiency. High spatial resolutions of 250μm pitch and energy resolutions of 1-2 keV (FWMH) are at the same time achieved with low noise front-end ASICs. The Soft Gamma-ray Detector (SGD) is a novel and unique detector which is characterized by semiconductor Compton cameras surrounded by narrow field-of-view active shields, and covers a higher energy range (30-600 keV) than that of HXI. It consists of four Compton Cameras constructed with many layers of Silicon and CdTe pad detectors. With its multi-layer structure and Compton reconstruction capability, in addition to the BGO active shields read by Avalanche photo-diodes, this detector will achieve an extremely high background rejection efficiency in the orbit. We report the current status of hardware development including the design requirement, expected performance, and technical readinesses of key technologies.

  19. Medipix2 based CdTe microprobe for dental imaging

    NASA Astrophysics Data System (ADS)

    Vykydal, Z.; Fauler, A.; Fiederle, M.; Jakubek, J.; Svestkova, M.; Zwerger, A.

    2011-12-01

    Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

  20. Development of a cadmium telluride pixel detector for astrophysical applications

    NASA Astrophysics Data System (ADS)

    Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

    2009-08-01

    We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

  1. Dynamic X-ray direct conversion detector using a CdTe polycrystalline layer coupled to a CMOS readout chip

    NASA Astrophysics Data System (ADS)

    Arques, Marc; Renet, Sébastien; Brambilla, Andréa; Feuillet, Guy; Gasse, Adrien; Billon-Pierron, Nicolas; Jolliot, Muriel; Mathieu, Lydie; Rohr, Pierre

    2011-05-01

    A direct detection X-ray imager is presented. It uses polycrystalline cadmium telluride (CdTe) grown by close space sublimation technique for the X-ray photoconductor. A 15 mm×15 mm CdTe layer is connected to a 200×200 pixel readout CMOS by indium bumping. X-ray performance at 16 frames/s rate is measured. In particular a readout noise of 0.5 X-ray, an MTF of 50% at 4 lp/mm and a DQE of 20% at 4 lp/mm are obtained.

  2. Development of a CZT drift ring detector for X and γ ray spectroscopy

    NASA Astrophysics Data System (ADS)

    Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

    2015-04-01

    CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

  3. Continued Development of Small-Pixel CZT and CdTe Detectors for Future High-Angular-Resolution Hard X-ray Missions

    NASA Astrophysics Data System (ADS)

    Krawczynski, Henric

    The Nuclear Spectroscopic Telescope Array (NuSTAR) Small Explorer Mission was launched in June 2012 and has demonstrated the technical feasibility and high scientific impact of hard X-ray astronomy. We propose to continue our current R&D program to develop finely pixelated semiconductor detectors and the associated readout electronics for the focal plane of a NuSTAR follow-up mission. The detector-ASIC (Application Specific Integrated Circuit) package will be ideally matched to the new generation of low-cost, low-mass X-ray mirrors which achieve an order of magnitude better angular resolution than the NuSTAR mirrors. As part of this program, the Washington University group will optimize the contacts of 2x2 cm^2 footprint Cadmium Zinc Telluride (CZT) and Cadmium Telluride (CdTe) detectors contacted with 100x116 hexagonal pixels at a next-neighbor pitch of 200 microns. The Brookhaven National Laboratory group will design, fabricate, and test the next generation of the HEXID ASIC matched to the new X-ray mirrors and the detectors, providing a low-power 100x116 channel ASIC with extremely low readout noise (i.e. with a root mean square noise of 13 electrons). The detectors will be tested with radioactive sources and in the focal plane of high-angular-resolution X-ray mirrors at the X-ray beam facilities at the Goddard and Marshall Space Flight Centers.

  4. Effect of Backing Plate Thermal Property on Friction Stir Welding of 25-mm-Thick AA6061

    NASA Astrophysics Data System (ADS)

    Upadhyay, Piyush; Reynolds, Anthony

    2014-04-01

    By using backing plates made out of materials with widely varying thermal diffusivity this work seeks to elucidate the effects of the root side thermal boundary condition on weld process variables and resulting joint properties. Welds were made in 25.4-mm-thick AA6061 using ceramic, titanium, steel, and aluminum as backing plate (BP) material. Welds were also made using a "composite backing plate" consisting of longitudinal narrow strip of low diffusivity material at the center and two side plates of high diffusivity aluminum. Stir zone temperature during the welding was measured using two thermocouples spot welded at the core of the probe: one at the midplane height and another near the tip of the probe corresponding to the root of the weld. Steady state midplane probe temperatures for all the BPs used were found to be very similar. Near root peak temperature, however, varied significantly among weld made with different BPs all other things being equal. Whereas the near root and midplane temperature were the same in the case of ceramic backing plate, the root peak temperature was 318 K (45 °C) less than the midplane temperature in the case of aluminum BP. The trends of nugget hardness and grain size in through thickness direction were in agreement with the measured probe temperatures. Hardness and tensile test results show that the use of composite BP results in stronger joint compared to monolithic steel BP.

  5. Effect of laser incidence angle on cut quality of 4 mm thick stainless steel sheet using fiber laser

    NASA Astrophysics Data System (ADS)

    Mullick, Suvradip; Agrawal, Arpit Kumar; Nath, Ashish Kumar

    2016-07-01

    Fiber laser has potential to outperform the more traditionally used CO2 lasers in sheet metal cutting applications due to its higher efficiency, better beam quality, reliability and ease of beam delivery through optical fiber. It has been however, reported that the higher focusability and shorter wavelength are advantageous for cutting thin metal sheets up to about 2 mm only. Better focasability results in narrower kerf-width, which leads to an earlier flow separation in the flow of assist gas within the kerf, resulting in uncontrolled material removal and poor cut quality. However, the advarse effect of tight focusability can be taken care by shifting the focal point position towards the bottom surface of work-piece, which results in a wider kerf size. This results in a more stable flow within the kerf for a longer depth, which improves the cut quality. It has also been reported that fiber laser has an unfavourable angle of incidence during cutting of thick sections, resulting in poor absorption at the metal surface. Therefore, the effect of laser incidence angle, along with other process parameters, viz. cutting speed and assist gas pressure on the cut quality of 4 mm thick steel sheet has been investigated. The change in laser incidence angle has been incorporated by inclining the beam towards and away from the cut front, and the quality factors are taken as the ratio of kerf width and the striation depth. Besides the absorption of laser radiation, beam inclination is also expected to influence the gas flow characteristics inside the kerf, shear force phenomena on the molten pool, laser beam coupling and laser power distribution at the inclined cut surface. Design of experiment has been used by implementing response surface methodology (RSM) to study the parametric dependence of cut quality, as well as to find out the optimum cut quality. An improvement in quality has been observed for both the inclination due to the combined effect of multiple phenomena.

  6. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

    PubMed

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-08-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e(-) RMS at room temperature. PMID:24187382

  7. Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners

    PubMed Central

    Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

    2013-01-01

    VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event’s time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μm mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μW from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e− RMS at room temperature. PMID:24187382

  8. MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

    NASA Astrophysics Data System (ADS)

    Accorsi, R.; Autiero, M.; Celentano, L.; Chmeissani, M.; Cozzolino, R.; Curion, A. S.; Frallicciardi, P.; Laccetti, P.; Lanza, R. C.; Lauria, A.; Maiorino, M.; Marotta, M.; Mettivier, G.; Montesi, M. C.; Riccio, P.; Roberti, G.; Russo, P.

    2007-02-01

    We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256×256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125I, 27-35 keV, 99mTc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor.

  9. Evaluation of a CdTe semiconductor based compact gamma camera for sentinel lymph node imaging

    SciTech Connect

    Russo, Paolo; Curion, Assunta S.; Mettivier, Giovanni; Esposito, Michela; Aurilio, Michela; Caraco, Corradina; Aloj, Luigi; Lastoria, Secondo

    2011-03-15

    Purpose: The authors assembled a prototype compact gamma-ray imaging probe (MediPROBE) for sentinel lymph node (SLN) localization. This probe is based on a semiconductor pixel detector. Its basic performance was assessed in the laboratory and clinically in comparison with a conventional gamma camera. Methods: The room-temperature CdTe pixel detector (1 mm thick) has 256x256 square pixels arranged with a 55 {mu}m pitch (sensitive area 14.08x14.08 mm{sup 2}), coupled pixel-by-pixel via bump-bonding to the Medipix2 photon-counting readout CMOS integrated circuit. The imaging probe is equipped with a set of three interchangeable knife-edge pinhole collimators (0.94, 1.2, or 2.1 mm effective diameter at 140 keV) and its focal distance can be regulated in order to set a given field of view (FOV). A typical FOV of 70 mm at 50 mm skin-to-collimator distance corresponds to a minification factor 1:5. The detector is operated at a single low-energy threshold of about 20 keV. Results: For {sup 99m}Tc, at 50 mm distance, a background-subtracted sensitivity of 6.5x10{sup -3} cps/kBq and a system spatial resolution of 5.5 mm FWHM were obtained for the 0.94 mm pinhole; corresponding values for the 2.1 mm pinhole were 3.3x10{sup -2} cps/kBq and 12.6 mm. The dark count rate was 0.71 cps. Clinical images in three patients with melanoma indicate detection of the SLNs with acquisition times between 60 and 410 s with an injected activity of 26 MBq {sup 99m}Tc and prior localization with standard gamma camera lymphoscintigraphy. Conclusions: The laboratory performance of this imaging probe is limited by the pinhole collimator performance and the necessity of working in minification due to the limited detector size. However, in clinical operative conditions, the CdTe imaging probe was effective in detecting SLNs with adequate resolution and an acceptable sensitivity. Sensitivity is expected to improve with the future availability of a larger CdTe detector permitting operation at shorter

  10. A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

    NASA Astrophysics Data System (ADS)

    Lee, Youngjin; Lee, Amy Candy; Kim, Hee-Joung

    2016-09-01

    Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

  11. Characterization of CdTe and CdZnTe detectors for gamma-ray imaging applications

    NASA Astrophysics Data System (ADS)

    Verger, L.; Boitel, M.; Gentet, M. C.; Hamelin, R.; Mestais, C.; Mongellaz, F.; Rustique, J.; Sanchez, G.

    2001-02-01

    CEA-LETI in association with Bicron and Crismatec has been developing solid-state gamma camera technology based on CZT. The project included gamma camera head systems development including front-end electronics with an integrated circuit (ASIC), material growth, and detector fabrication and characterization. One feature of the work is the use of linear correlation between the amplitude and the fast rise time of the signal - which corresponds to the electron transit time in the detector, a development that was reported previously and which allows more than 80% of the 122 keV γ-photons incident on HPBM material to be recovered in a ±6.5% 2D window. In the current work, we summarize other methods to improve CZT detector performance and compare them with the Bi-Parametric Spectrum (BPS) method. The BPS method can also be applied as a diagnositic. BPS curve shapes are shown to vary with electric field, and with electron transport properties, and the correction algorithims are seen to be robust over a range of values. In addition, the technique is found to improve detectors from a variety of sources including some with special electrode geometries. In all cases, the BPS method improves efficiency (>75%) without degrading energy resolution (± 6.5% 2D window) even for a monolithic detector. The method does not overcome bulk inhomogeneity nor noise which comes from low resistivity.

  12. The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

    NASA Astrophysics Data System (ADS)

    Zang, A.; Anton, G.; Ballabriga, R.; Bisello, F.; Campbell, M.; Celi, J. C.; Fauler, A.; Fiederle, M.; Jensch, M.; Kochanski, N.; Llopart, X.; Michel, N.; Mollenhauer, U.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W.; Michel, T.

    2015-04-01

    The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation was carried out to use the Dosepix detector as a kVp-meter, that means to determine the applied acceleration voltage from measured X-ray tubes spectra.

  13. Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region

    NASA Technical Reports Server (NTRS)

    1972-01-01

    High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

  14. Optimization of a 1 mm thick PVA/acrylamide recording material to obtain holographic memories: method of preparation and holographic properties

    NASA Astrophysics Data System (ADS)

    Ortuño, M.; Gallego, S.; García, C.; Neipp, C.; Beléndez, A.; Pascual, I.

    2003-07-01

    Information holographic storage is a very promising technique due to its high theoretical capacity. One of the key factors in developing holographic memories is the need for a suitable recording material which must have certain specific characteristics. In particular, in order to achieve a high storage density it is necessary to work with great thicknesses. One of the essential requirements for holographic memories to be competitive is that the material must have a thickness of 500 μm or more, but it is not easy to find such thicknesses with the photopolymers currently available. In this study, we develop a method of preparing layers of a polyvinyl alcohol/acrylamide based photopolymer approximately 1 mm thick. Optimization of this material makes it possible to obtain good results for the main holographic parameters; diffraction efficiency 70% and energetic sensitivity 50 mJ/cm2.

  15. Development of a stacked detector system for the x-ray range and its possible applications

    NASA Astrophysics Data System (ADS)

    Maier, Daniel; Limousin, Olivier; Meuris, Aline; Pürckhauer, Sabina; Santangelo, Andrea; Schanz, Thomas; Tenzer, Christoph

    2014-07-01

    We have constructed a stacked detector system operating in the X-ray range from 0.5 keV to 250 keV that consists of a Si-based 64×64 DePFET-Matrix in front of a CdTe hybrid detector called Caliste-64. The setup is operated under laboratory conditions that approximate the expected environment of a space-borne observatory. The DePFET detector is an active pixel matrix that provides high count-rate capabilities with a near Fanolimited spectral resolution at energies up to 15 keV. The Caliste-64 hard X-ray camera consists of a 1mm thick CdTe crystal combined with very compact integrated readout electronics, constituting a high performance spectro-imager with event-triggered time-tagging capability in the energy range between 2 keV and 200 keV. In this combined geometry the DePFET detector works as the Low Energy Detector (LED) while the Caliste-64 - as the High Energy Detector (HED) - detects predominantly the high energetic photons that have passed the LED. In addition to the individual optimization of both detectors, we use the setup to test and optimize the performance of the combined detector system. Side-effects like X-ray fluorescence photons, electrical crosstalk, and mutual heating have negative impacts on the data quality and will be investigated. Besides the primary application as a combined imaging detector system with high sensitivity across a broad energy range, additional applications become feasible. Via the analysis of coincident events in both detectors we can estimate the capabilities of the setup to be used as a Compton camera and as an X-ray polarimeter - both desirable functionalities for use in the lab as well as for future X-ray missions.

  16. Influence of Temperature and Time of Post-weld Heat Treatment on Stress Relief in an 800-mm-Thick Steel Weldment

    NASA Astrophysics Data System (ADS)

    Mitra, Abhishek; Siva Prasad, N.; Janaki Ram, G. D.

    2016-04-01

    Ferritic steel weldments are invariably post-weld heat treated for relieving the residual stresses. However, the long duration of post-weld heat treatment (PWHT) required for very thick weldments can adversely affect the mechanical properties and fracture toughness. Thus, there is a need to establish the relative importance of temperature and time of PWHT with respect to stress relief. Accordingly, in the present work, the phenomenon of stress relief (due to PWHT) in an 800-mm-thick steel weldment was investigated using finite element analysis and the results were validated against experimental measurements. An analytical study was also carried out to determine the relative influence of temperature and time of PWHT on stress relief. It was found that time of PWHT plays a more significant role in case of relatively lower PWHT temperatures. It was also found that, for a given value of Hollomon parameter, different combinations of PWHT temperature and time can be employed to achieve the same level of stress relief. A mathematical relationship has been established between Hollomon parameter and magnitude of residual stress after PWHT. It has been shown that residual stress is a monotonically decreasing function of the Hollomon parameter.

  17. Tungsten Inert Gas and Friction Stir Welding Characteristics of 4-mm-Thick 2219-T87 Plates at Room Temperature and -196 °C

    NASA Astrophysics Data System (ADS)

    Lei, Xuefeng; Deng, Ying; Yin, Zhimin; Xu, Guofu

    2014-06-01

    2219-T87 aluminum alloy is widely used for fabricating liquid rocket propellant storage tank, due to its admirable cryogenic property. Welding is the dominant joining method in the manufacturing process of aerospace components. In this study, the tungsten inert gas welding and friction stir welding (FSW) characteristics of 4-mm-thick 2219-T87 alloy plate at room temperature (25 °C) and deep cryogenic temperature (-196 °C) were investigated by property measurements and microscopy methods. The studied 2219 base alloy exhibits a low strength plane anisotropy and excellent room temperature and cryogenic mechanical properties. The ultimate tensile strength values of TIG and FSW welding joints can reach 265 and 353 MPa at room temperature, and 342 and 438 MPa at -196 °C, respectively. The base metal consists of elongated deformed grains and many nano-scaled θ (Al2Cu) aging precipitates. Fusion zone and heat-affected zone (HAZ) of the TIG joint are characterized by coarsening dendritic grains and equiaxed recrystallized grains, respectively. The FSW-welded joint consists of the weld nugget zone, thermo-mechanically affected zone (TMAZ), and HAZ. In the weld nugget zone, a micro-scaled sub-grain structure is the main microstructure characteristic. The TMAZ and HAZ are both characterized by coarsened aging precipitates and elongated deformed grains. The excellent FSW welding properties are attributed to the preservation of the working structures and homogenous chemical compositions.

  18. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system

    PubMed Central

    Cai, Liang; Meng, Ling-Jian

    2013-01-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X–Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2–5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper. PMID:24371365

  19. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system.

    PubMed

    Cai, Liang; Meng, Ling-Jian

    2013-02-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X-Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2-5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper. PMID:24371365

  20. Hybrid pixel-waveform CdTe/CZT detector for use in an ultrahigh resolution MRI compatible SPECT system

    NASA Astrophysics Data System (ADS)

    Cai, Liang; Meng, Ling-Jian

    2013-02-01

    In this paper, we will present a new small pixel CdTe/CZT detector for sub-500 μm resolution SPECT imaging application inside MR scanner based on a recently developed hybrid pixel-waveform (HPWF) readout circuitry. The HPWF readout system consists of a 2-D multi-pixel circuitry attached to the anode pixels to provide the X-Y positions of interactions, and a high-speed digitizer to read out the pulse-waveform induced on the cathode. The digitized cathode waveform could provide energy deposition information, precise timing and depth-of-interaction information for gamma ray interactions. Several attractive features with this HPWF detector system will be discussed in this paper. To demonstrate the performance, we constructed several prototype HPWF detectors with pixelated CZT and CdTe detectors of 2-5 mm thicknesses, connected to a prototype readout system consisting of energy-resolved photon-counting ASIC for readout anode pixels and an Agilent high-speed digitizer for digitizing the cathode signals. The performances of these detectors based on HPWF are discussed in this paper.

  1. Applications of CdTe to nuclear medicine. Final report

    SciTech Connect

    Entine, G.

    1985-05-07

    Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals. (ACR)

  2. Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

    NASA Astrophysics Data System (ADS)

    Beilicke, Matthias

    Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

  3. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    NASA Astrophysics Data System (ADS)

    Hahn, C.; Weber, G.; Märtin, R.; Höfer, S.; Kämpfer, T.; Stöhlker, Th.

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  4. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    PubMed

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse. PMID:27131653

  5. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  6. Measurement of the electrical properties of a polycrystalline cadmium telluride for direct conversion flat panel x-ray detector

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; kim, D. K.; Shin, J. W.; Heo, S. U.; Kim, J. S.; Park, J. G.; Nam, S. H.

    2014-01-01

    Cadmium telluride (CdTe) is one of the best candidate direct conversion material for medical X-ray application because it satisfies the requirements of direct conversion x-ray material such as high atomic absorption, density, bandgap energy, work fuction, and resistivity. With such properties, single crystal CdTe exhibits high quantum efficiency and charge collection efficiency. However, for the development of low-cost large area detector, the study of the improvement of polycrystalline CdTe property is desirable. In this study, in order to improve the properties of polycrystalline CdTe, we produced polycrystalline CdTe with different kinds of raw materials, high purity Cd and Te powder compounds and bulk CdTe compound synthesized from single crystal CdTe. The electric properties including resistivity, x-ray sensitivity, and charge transport properties were investigated. As a result, polycrystalline CdTe exhibited simular level of resistivity and x-ray sensitivity to single crystal CdTe. The carrier transport properties of polycrystalline CdTe showed poorer properties than those of single crystal CdTe due to significant charge trapping. However, the polycrystalline CdTe fabricated with bulk CdTe compound synthesized from single crystal CdTe showed better charge transport properties than the polycrystalline CdTe fabricated with CdTe powder compounds. This is suitable for diagnostic x-ray detectors, especially for digital fluoroscopy.

  7. PC/FRAM plutonium isotopic analysis of CdTe gamma-ray spectra

    NASA Astrophysics Data System (ADS)

    Vo, D. T.; Russo, P. A.

    2002-07-01

    This paper reports the results of isotopics measurements of plutonium with the new CdTe gamma-ray spectrometer. These are the first wide-range plutonium gamma-ray isotopics analysis results obtained with other than germanium spectrometers. The CdTe spectrometer measured small plutonium reference samples in reasonable count times, covering the range from low to high burnup. The complete experimental hardware included the new, commercial, portable CdTe detector and two commercial portable multichannel analyzers. Version 4 of FRAM is the software that performed the isotopics analysis.

  8. Detectors

    DOEpatents

    Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

    2002-01-01

    The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

  9. SU-E-T-231: Measurements of Gold Nanoparticle-Mediated Proton Dose Enhancement Due to Particle-Induced X-Ray Emission and Activation Products Using Radiochromic Films and CdTe Detector

    SciTech Connect

    Cho, J; Cho, S; Manohar, N; Krishnan, S

    2014-06-01

    Purpose: There have been several reports of enhanced cell-killing and tumor regression when tumor cells and mouse tumors were loaded with gold nanoparticles (GNPs) prior to proton irradiation. While particle-induced xray emission (PIXE), Auger electrons, secondary electrons, free radicals, and biological effects have been suggested as potential mechanisms responsible for the observed GNP-mediated dose enhancement/radiosensitization, there is a lack of quantitative analysis regarding the contribution from each mechanism. Here, we report our experimental effort to quantify some of these effects. Methods: 5-cm-long cylindrical plastic vials were filled with 1.8 mL of either water or water mixed with cylindrical GNPs at the same gold concentration (0.3 mg Au/g) as used in previous animal studies. A piece of EBT2 radiochromic film (30-µm active-layer sandwiched between 80/175-µm outer-layers) was inserted along the long axis of each vial and used to measure dose enhancement due to PIXE from GNPs. Vials were placed at center-of-modulation (COM) and 3-cm up-/down-stream from COM and irradiated with 5 different doses (2–10 Gy) using 10-cm-SOBP 160-MeV protons. After irradiation, films were cleaned and read to determine the delivered dose. A vial containing spherical GNPs (20 mg Au/g) was also irradiated, and gamma-rays from activation products were measured using a cadmium-telluride (CdTe) detector. Results: Film measurements showed no significant dose enhancement beyond the experimental uncertainty (∼2%). There was a detectable activation product from GNPs, but it appeared to contribute to dose enhancement minimally (<0.01%). Conclusion: Considering the composition of EBT2 film, it can be inferred that gold characteristic x-rays from PIXE and their secondary electrons make insignificant contribution to dose enhancement. The current investigation also suggests negligible dose enhancement due to activation products. Thus, previously-reported GNP-mediated proton dose

  10. High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

    NASA Astrophysics Data System (ADS)

    Takahashi, T.; Paul, B.; Hirose, K.; Matsumoto, C.; Ohno, R.; Ozaki, T.; Mori, K.; Tomita, Y.

    1999-10-01

    We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A /2 mm/×2 mm detector of thickness 0.5 mm, when operated at a temperature of /5°C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm-1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of /1.1% and /0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions.

  11. CDTE CERAMICS BASED ON COMPRESSION OF NANOCRYSTAL POWDER.

    SciTech Connect

    KOLESNIKOV, N.N.; BORISENKO, E.B.; BORISENKO, D.N.; JAMES, R.B.; KVEDER, V.V.; GARTMAN, V.K.; GNESIN, G.A.

    2005-07-01

    Wide-gap II-VI semiconductor crystalline materials are conventionally used in laser optics, light emitting devices, and nuclear detectors. The advances made in the studies of nanocrystals and in the associated technologies have created great interest in the design of semiconductor devices based on these new materials. The objectives of this work are to study the microstructure and the properties of the new material produced through CdTe nanopowder compression and to consider the prospects of its use in the design of ionizing-radiation detectors and in laser optics. Highly dense material produced of 7-10 nm CdTe particles under pressure of 20-600 MPa at temperatures from 20 to 200 C was analyzed using x-ray diffractometry, texture analysis; light and scanning electron microscopy, and optical spectrophotometry. The mechanical and electrical properties of the compacted material were measured and compared with similar characteristics of the conventionally grown single crystals. Phase transformation from metastable to stable crystal structure caused by deformation was observed in the material. Sharp crystallographic texture {l_brace}001{r_brace} that apparently affects specific mechanical, electrical and optical characteristics of compacted CdTe was observed. The specific resistivity calculated from the linear current-voltage characteristics was about 10{sup 10} Ohm x cm, which is a promisingly high value regarding the possibility of using this material in the design of semiconductor radiation detectors. The optical spectra show that the transmittance in the infrared region is sufficient to consider the prospects of possible applications of CdTe ceramics in laser optics.

  12. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors

    NASA Astrophysics Data System (ADS)

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-01

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution.

  13. Results of a Si/Cdte Compton Telescope

    SciTech Connect

    Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu; Fukazawa, Yasushi; Nomachi, Masaharu; /Sagamihara, Inst. Space Astron. Sci. /Tokyo U. /SLAC /Hiroshima U. /Osaka U.

    2005-09-23

    We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2{sup o}(FWHM).

  14. APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE

    SciTech Connect

    Khusainov, A. K.; Iwanczyk, J. S.; Patt, B. E.; Prirogov, A. M.; Vo, Duc T.

    2001-01-01

    A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  15. CdTe devices and method of manufacturing same

    DOEpatents

    Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.; Albin, David S.; Barnes, Teresa; Burst, James; Duenow, Joel N.; Reese, Matthew

    2015-09-29

    A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

  16. Carrier compensation in semi-insulating CdTe: First-principles calculations

    SciTech Connect

    Du, Mao-Hua; Singh, David J

    2008-01-01

    Carrier compensation in semi-insulating CdTe has been attributed to the compensation of surplus shallow acceptors by deep donors, usually assumed to be Te antisites. However, our first-principles calculations show that intrinsic defects should not have a significant effect on the carrier compensation due either to lack of deep levels near midgap or to low defect concentration. We demonstrate that an extrinsic defect, OTe-H complex, may play an important role in the carrier compensation in CdTe because of its amphoteric character and reasonably high concentration. Our findings have important consequences for improving device performance in CdTe-based radiation detectors and solar cells.

  17. Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

    SciTech Connect

    Entine, G

    1980-01-01

    The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder. (ACR)

  18. Detector, collimator and real-time reconstructor for a new scanning-beam digital x-ray (SBDX) prototype

    PubMed Central

    Speidel, Michael A.; Tomkowiak, Michael T.; Raval, Amish N.; Dunkerley, David A. P.; Slagowski, Jordan M.; Kahn, Paul; Ku, Jamie; Funk, Tobias

    2015-01-01

    Scanning-beam digital x-ray (SBDX) is an inverse geometry fluoroscopy system for low dose cardiac imaging. The use of a narrow scanned x-ray beam in SBDX reduces detected x-ray scatter and improves dose efficiency, however the tight beam collimation also limits the maximum achievable x-ray fluence. To increase the fluence available for imaging, we have constructed a new SBDX prototype with a wider x-ray beam, larger-area detector, and new real-time image reconstructor. Imaging is performed with a scanning source that generates 40,328 narrow overlapping projections from 71 × 71 focal spot positions for every 1/15 s scan period. A high speed 2-mm thick CdTe photon counting detector was constructed with 320×160 elements and 10.6 cm × 5.3 cm area (full readout every 1.28 μs), providing an 86% increase in area over the previous SBDX prototype. A matching multihole collimator was fabricated from layers of tungsten, brass, and lead, and a multi-GPU reconstructor was assembled to reconstruct the stream of captured detector images into full field-of-view images in real time. Thirty-two tomosynthetic planes spaced by 5 mm plus a multiplane composite image are produced for each scan frame. Noise equivalent quanta on the new SBDX prototype measured 63%–71% higher than the previous prototype. X-ray scatter fraction was 3.9–7.8% when imaging 23.3–32.6 cm acrylic phantoms, versus 2.3–4.2% with the previous prototype. Coronary angiographic imaging at 15 frame/s was successfully performed on the new SBDX prototype, with live display of either a multiplane composite or single plane image. PMID:26236071

  19. Detector, collimator and real-time reconstructor for a new scanning-beam digital x-ray (SBDX) prototype

    NASA Astrophysics Data System (ADS)

    Speidel, Michael A.; Tomkowiak, Michael T.; Raval, Amish N.; Dunkerley, David A. P.; Slagowski, Jordan M.; Kahn, Paul; Ku, Jamie; Funk, Tobias

    2015-03-01

    Scanning-beam digital x-ray (SBDX) is an inverse geometry fluoroscopy system for low dose cardiac imaging. The use of a narrow scanned x-ray beam in SBDX reduces detected x-ray scatter and improves dose efficiency, however the tight beam collimation also limits the maximum achievable x-ray fluence. To increase the fluence available for imaging, we have constructed a new SBDX prototype with a wider x-ray beam, larger-area detector, and new real-time image reconstructor. Imaging is performed with a scanning source that generates 40,328 narrow overlapping projections from 71 x 71 focal spot positions for every 1/15 s scan period. A high speed 2-mm thick CdTe photon counting detector was constructed with 320x160 elements and 10.6 cm x 5.3 cm area (full readout every 1.28 μs), providing an 86% increase in area over the previous SBDX prototype. A matching multihole collimator was fabricated from layers of tungsten, brass, and lead, and a multi-GPU reconstructor was assembled to reconstruct the stream of captured detector images into full field-of-view images in real time. Thirty-two tomosynthetic planes spaced by 5 mm plus a multiplane composite image are produced for each scan frame. Noise equivalent quanta on the new SBDX prototype measured 63%-71% higher than the previous prototype. X-ray scatter fraction was 3.9-7.8% when imaging 23.3-32.6 cm acrylic phantoms, versus 2.3- 4.2% with the previous prototype. Coronary angiographic imaging at 15 frame/s was successfully performed on the new SBDX prototype, with live display of either a multiplane composite or single plane image.

  20. CdTe quantum dots for an application in the life sciences

    NASA Astrophysics Data System (ADS)

    Thi Dieu Thuy, Ung; Toan, Pham Song; Chi, Tran Thi Kim; Duy Khang, Dinh; Quang Liem, Nguyen

    2010-12-01

    This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1.

  1. High Energy Resolution Hard X-Ray and Gamma-Ray Imagers Using CdTe Diode Devices

    NASA Astrophysics Data System (ADS)

    Watanabe, Shin; Ishikawa, Shin-Nosuke; Aono, Hiroyuki; Takeda, Shin'ichiro; Odaka, Hirokazu; Kokubun, Motohide; Takahashi, Tadayuki; Nakazawa, Kazuhiro; Tajima, Hiroyasu; Onishi, Mitsunobu; Kuroda, Yoshikatsu

    2009-06-01

    We developed CdTe double-sided strip detectors (DSDs or cross strip detectors) and evaluated their spectral and imaging performance for hard X-rays and gamma-rays. Though the double-sided strip configuration is suitable for imagers with a fine position resolution and a large detection area, CdTe diode DSDs with indium (In) anodes have yet to be realized due to the difficulty posed by the segmented In anodes. CdTe diode devices with aluminum (Al) anodes were recently established, followed by a CdTe device in which the Al anodes could be segmented into strips. We developed CdTe double-sided strip devices having Pt cathode strips and Al anode strips, and assembled prototype CdTe DSDs. These prototypes have a strip pitch of 400 micrometer. Signals from the strips are processed with analog ASICs (application specific integrated circuits). We have successfully performed gamma-ray imaging spectroscopy with a position resolution of 400 micrometer. Energy resolution of 1.8 keV (FWHM: full width at half maximum) was obtained at 59.54 keV. Moreover, the possibility of improved spectral performance by utilizing the energy information of both side strips was demonstrated. We designed and fabricated a new analog ASIC, VA32TA6, for the readout of semiconductor detectors, which is also suitable for DSDs. A new feature of the ASIC is its internal ADC function. We confirmed this function and good noise performance that reaches an equivalent noise charge of 110 e- under the condition of 3-4 pF input capacitance.

  2. Radiation detection with CdTe quantum dots in sol-gel glass and polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Manickaraj, Kavin; Wagner, Brent K.; Kang, Zhitao

    2013-05-01

    Optically based radiation detectors in various fields of science still suffer from low resolution, sensitivity and efficiency that restrict their overall performance. Quantum dots (QD) are well-suited for such detectors due to their unique optical properties. CdTe QDs show fast luminescence decay times, high conversion efficiencies, and have band gaps strongly dependent on the particle radius. Since QD particle sizes are well below the wavelengths of their emissions, they remain optically transparent when incorporated in both polymer and sol-gel based silica glass due to negligible optical scattering. In addition, as these composite materials can greatly improve the mechanical robustness of alpha-particle detectors, conventionally known to have delicate components, CdTe QDs show high promise for radiation sensing applications. These properties are especially advantageous for alpha-particle and potentially neutron detection. In this work, CdTe QD-based glass or polymer matrix nanocomposites were synthesized for use as alpha-particle detection scintillators.. The fast photo-response and decay times provide excellent time resolution. The radiation responses of such nanocomposites in polymer or glass matrices were investigated.

  3. Imaging properties of small-pixel spectroscopic x-ray detectors based on cadmium telluride sensors.

    PubMed

    Koenig, Thomas; Schulze, Julia; Zuber, Marcus; Rink, Kristian; Butzer, Jochen; Hamann, Elias; Cecilia, Angelica; Zwerger, Andreas; Fauler, Alex; Fiederle, Michael; Oelfke, Uwe

    2012-11-01

    Spectroscopic x-ray imaging by means of photon counting detectors has received growing interest during the past years. Critical to the image quality of such devices is their pixel pitch and the sensor material employed. This paper describes the imaging properties of Medipix2 MXR multi-chip assemblies bump bonded to 1 mm thick CdTe sensors. Two systems were investigated with pixel pitches of 110 and 165 μm, which are in the order of the mean free path lengths of the characteristic x-rays produced in their sensors. Peak widths were found to be almost constant across the energy range of 10 to 60 keV, with values of 2.3 and 2.2 keV (FWHM) for the two pixel pitches. The average number of pixels responding to a single incoming photon are about 1.85 and 1.45 at 60 keV, amounting to detective quantum efficiencies of 0.77 and 0.84 at a spatial frequency of zero. Energy selective CT acquisitions are presented, and the two pixel pitches' abilities to discriminate between iodine and gadolinium contrast agents are examined. It is shown that the choice of the pixel pitch translates into a minimum contrast agent concentration for which material discrimination is still possible. We finally investigate saturation effects at high x-ray fluxes and conclude with the finding that higher maximum count rates come at the cost of a reduced energy resolution. PMID:23032372

  4. Hard x-ray polarimetry with a thick CdTe position sensitive spectrometer

    NASA Astrophysics Data System (ADS)

    Caroli, Ezio; Bertuccio, Giuseppe; Cola, Adriano; Curado da Silva, R. M.; Donati, Ariano; Dusi, Waldes; Landini, Gianni; Siffert, Paul; Sampietro, Marco; Stephen, John B.

    2000-12-01

    Even though it is recognized that the study of polarization from cosmic high-energy sources can give very important information about the nature of the emission mechanism, to date very few measurements have been attempted. For several years we have proposed the use of a thick CdTe array as a position sensitive spectrometer for hard X- and soft gamma-ray astronomy, a design which is also efficient for use as a polarimeter at energies above approximately 100 keV. Herein we describe the preliminary results of our study of a polarimeter based on 4096 CdTe microcrystals that we would like to develop for a high altitude balloon experiment. We present the telescope concept with a description of each subsystem together with some results on activities devoted to the optimization of the CdTe detector units' response. Furthermore we give an evaluation of the telescope performance in terms of achievable spectroscopic and polarimetric performance. In particular we will show the results of Monte Carlo simulations developed to evaluate the efficiency of our detector as a hard X ray polarimeter.

  5. CdTe quantum dots@luminol as signal amplification system for chrysoidine with chemiluminescence-chitosan/graphene oxide-magnetite-molecularly imprinting sensor

    NASA Astrophysics Data System (ADS)

    Duan, Huimin; Li, Leilei; Wang, Xiaojiao; Wang, Yanhui; Li, Jianbo; Luo, Chuannan

    2016-01-01

    A sensitive chemiluminescence (CL) sensor based on chemiluminescence resonance energy transfer (CRET) in CdTe quantum dots@luminol (CdTe QDs@luminol) nanomaterials combined with chitosan/graphene oxide-magnetite-molecularly imprinted polymer (Cs/GM-MIP) for sensing chrysoidine was developed. CdTe QDs@luminol was designed to not only amplify the signal of CL but also reduce luminol consumption in the detection of chrysoidine. On the basis of the abundant hydroxy and amino, Cs and graphene oxide were introduced into the GM-MIP to improve the adsorption ability. The adsorption capacities of chrysoidine by both Cs/GM-MIP and non-imprinted polymer (Cs/GM-NIP) were investigated, and the CdTe QDs@luminol and Cs/GM-MIP were characterized by UV-vis, FTIR, SEM and TEM. The proposed sensor can detect chrysoidine within a linear range of 1.0 × 10- 7 - 1.0 × 10- 5 mol/L with a detection limit of 3.2 × 10- 8 mol/L (3δ) due to considerable chemiluminescence signal enhancement of the CdTe quantum dots@luminol detector and the high selectivity of the Cs/GM-MIP system. Under the optimal conditions of CL, the CdTe QDs@luminol-Cs/GM-MIP-CL sensor was used for chrysoidine determination in samples with satisfactory recoveries in the range of 90-107%.

  6. Photoinduced tellurium precipitation in CdTe

    NASA Astrophysics Data System (ADS)

    Sugai, Shunji

    1991-06-01

    Tellurium precipitation in CdTe is found to be induced by photoirradiation with energy higher than the energy gap at 240 W/sq cm. It is suggested that this photoinduced precipitation is related with the strong electron-phonon interactions, possibly self-trapped excitons. This irreducible tellurium precipitation may cause a serious problem for the life of semiconductor devices.

  7. Ruggedization of CdZnTe detectors and detector assemblies for radiation detection applications

    NASA Astrophysics Data System (ADS)

    Lu, P. H.; Gomolchuk, P.; Chen, H.; Beitz, D.; Grosser, A. W.

    2015-06-01

    This paper described improvements in the ruggedization of CdZnTe detectors and detector assemblies for use in radiation detection applications. Research included experimenting with various conductive and underfill adhesive material systems suitable for CZT substrates. A detector design with encapsulation patterning was developed to protect detector surfaces and to control spacing between CZT anode and PCB carrier. Robustness of bare detectors was evaluated through temperature cycling and metallization shear testing. Attachment processes using well-chosen adhesives and PCB carrier materials were optimized to improve reliability of detector assemblies, resulted in Improved Attachment Detector Assembly. These detector assemblies were subjected to aggressive temperature cycling, and varying levels of drop/shock and vibration, in accordance with modified JEDEC, ANSI and FedEx testing standards, to assess their ruggedness. Further enhanced detector assembly ruggedization methods were investigated involving adhesive conformal coating, potting and dam filling on detector assemblies, which resulted in the Enhanced Ruggedization Detector Assembly. Large numbers of CZT detectors and detector assemblies with 5 mm and 15 mm thick, over 200 in total, were tested. Their performance was evaluated by exposure to various radioactive sources using comprehensive predefined detector specifications and testing protocols. Detector assemblies from improved attachment and enhanced ruggedization showed stable performances during the harsh environmental condition tests. In conclusion, significant progress has been made in improving the reliability and enhancing the ruggedness of CZT detector assemblies for radiation detection applications deployed in operational environments.

  8. Approaching cryogenic Ge performance with Peltier-cooled CdTe

    NASA Astrophysics Data System (ADS)

    Khusainov, Abdurakhman; Iwanczyk, Jan S.; Patt, Bradley E.; Pirogov, Alexandre M.; Vo, Duc T.; Russo, Phyllis A.

    2001-12-01

    A new class of hand-held, portable spectrometers based on large area (1cm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

  9. Characterisation of an electron collecting CdTe strip sensor using the MYTHEN readout chip

    NASA Astrophysics Data System (ADS)

    Elbracht-Leong, S.; Bergamaschi, A.; Greiffenberg, D.; Peake, D.; Rassool, R.; Schmitt, B.; Toyokawa, H.; Sobbott, B.

    2015-01-01

    MYTHEN is a single photon counting hybrid strip X-ray detector that has found application in x-ray powder diffraction (XRPD) experiments at synchrotrons worldwide. Originally designed to operate with hole collecting silicon sensors, MYTHEN is suited for detecting X-rays above 5 keV, however many PD beamlines have been designed for energies above 50 keV where silicon sensors have an efficiency of only few percent. In order to adapt MYTHEN to meet these energies the absorption efficiency of the sensor must be substantially increased. Cadmium-Telluride (CdTe) has an absorption efficiency approximately 30 times that of silicon at 50 keV, and is therefore a very promising replacement candidate for silicon. Furthermore, the large dynamic range of the pre-amplifier of MYTHEN and its double polarity capability has enabled the characterisation of an electron collecting Schottky type CdTe sensor. A CdTe MYTHEN system has undergone a series of characterisation experiments including stress test of bias and radiation induced polarizations. The performance of this system will be presented and discussed.

  10. Light-weight spherical mirrors for Cherenkov detectors

    NASA Astrophysics Data System (ADS)

    Cisbani, E.; Colilli, S.; Crateri, R.; Cusanno, F.; Fratoni, R.; Frullani, S.; Garibaldi, F.; Giuliani, F.; Gricia, M.; Iodice, M.; Iommi, R.; Lucentini, M.; Mostarda, A.; Pierangeli, L.; Santavenere, F.; Urciuoli, G. M.; De Leo, R.; Lagamba, L.; Nappi, E.; Braem, A.; Vernin, P.

    2003-01-01

    Light-weight spherical mirrors have been appositely designed and built for the gas threshold Cherenkov detectors of the two Hall A spectrometers. The mirrors are made of a 1 mm thick aluminized plexiglass sheet, reinforced by a rigid backing consisting of a phenolic honeycomb sandwiched between two carbon fiber mats epoxy glued. The produced mirrors have a thickness equivalent to 0.55% of radiation length, and an optical slope error of about 5.5 mrad. These characteristics make these mirrors suitable for the implementation in Cherenkov threshold detectors. Ways to improve the mirror features are also discussed in view of their possible employment in RICH detectors.

  11. Comparison of NaI(Tl), CdTe, and HgI2 surgical probes: physical characterization.

    PubMed

    Barber, H B; Barrett, H H; Hickernell, T S; Kwo, D P; Woolfenden, J M; Entine, G; Ortale Baccash, C

    1991-01-01

    The physical properties of three surgical probes containing different radiation detectors are compared: a NaI(Tl) scintillator with a flexible, fiber-optic light guide, and two semiconductor detectors that operate at room temperature, CdTe and HgI2. Also compared are spectra, energy resolutions, and counting efficiencies measured at a variety of gamma-ray energies between 30 and 1000 keV. The energy resolution of the NaI probe is substantially poorer than that of either semiconductor probe due in part to light losses in coupling the scintillator to the fiber optics. The semiconductor probes have complex spectral response due to charge-carrier trapping and K x-ray escape, and not all photoelectric interactions in these detectors contribute to the useful part of the photopeak. Above 120 keV the counting efficiency for the NaI probe is an order of magnitude higher than for the CdTe and HgI2 probes. Both energy resolution and counting efficiency are slightly better for the HgI2 probe than for the CdTe probe. PMID:1870478

  12. An evaluation of cadmium telluride detectors for computer assisted tomography.

    PubMed

    Chu, D; Kaufman, L; Hosier, K; Hoenninger, J

    1978-11-01

    Cadmium telluride (CdTe) presents a set of extremely attractive features as an X-ray detector for computer assisted tomography (CAT). It is stable and easily handled; has a high detection efficiency and very efficient conversion of energy to charge; and permits a high element density in a compact configuration. Unfortunately, effects due to "polarization," "tailing," high and variable leakage currents, and long "memory" are incompatible with the needs of CAT instrumentation. Pulse-processing techniques have allowed us to eliminate these problems in positive-sensitive detectors, thus opening the way for utilization of CdTe in CAT. PMID:711945

  13. Monte Carlo Polarimetric Efficiency Simulations for a Single Monolithic CdTe Thick Matrix

    NASA Astrophysics Data System (ADS)

    Curado da Silva, R. M.; Hage-Ali, M.; Caroli, E.; Siffert, P.; Stephen, J. B.

    Polarimetric measurements for hard X- and soft gamma-rays are still quite unexplored in astrophysical source observations. In order to improve the study of these sources through Compton polarimetry, detectors should have a good polarimetric efficiency and also satisfy the demands of the typical exigent detection environments for this kind of missions. Herein we present a simple concept for such systems, since we propose the use of a single thick (˜10 mm) monolithic matrix of CdTe of 32×32 pixels, with an active area of about 40 cm2. In order to predict the best configuration and dimension of detector pixels defined inside the CdTe monolithic piece, a Monte Carlo code based on GEANT4 library modules was developed. Efficiency and polarimetric modulation factor results as a function of energy and detector thickness, are presented and discussed. Q factor of the order of 0.3 has been found up to several hundreds of keV.

  14. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-01-01

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate and electrolyzing the leachate to separate Cd from Te, wherein the Te is deposits onto a cathode while the Cd remains in solution.

  15. Carbon analysis in CdTe by nuclear activation

    NASA Astrophysics Data System (ADS)

    Chibani, H.; Stoquert, J. P.; Hage-Ali, M.; Koebel, J. M.; Abdesselam, M.; Siffert, P.

    1991-06-01

    We describe the capabilities of the nuclear reaction 12C(d, n) 13Nlimit→β +13C the measurement of absolute concentrations of C in CdTe by the charged particle activation (CPA) method. This technique is used to determine the segregation coefficient of C introduced as an impurity in CdTe.

  16. Gamma ray detector modules

    NASA Technical Reports Server (NTRS)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  17. Schottky Barrier CdTe(Cl) Detectors for Planetary Missions

    NASA Astrophysics Data System (ADS)

    Eisen, Yosef; Floyd, Samuel

    2002-10-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm × 2mm × 1mm and segmented monolithic 3cm × 3 cm × 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm × 2mm × 1mm CdTe operating at -30°C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm × 3cm × 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed.

  18. Thickness scalability of large volume cadmium zinc telluride high resolution radiation detectors

    NASA Astrophysics Data System (ADS)

    Awadalla, S. A.; Chen, H.; Mackenzie, J.; Lu, P.; Iniewski, K.; Marthandam, P.; Redden, R.; Bindley, G.; He, Z.; Zhang, F.

    2009-06-01

    This work focuses on the thickness scalability of traveling heater method (THM) grown CdZnTe crystals to produce large volume detectors with optimized spectroscopic performance. To meet this challenge, we have tuned both our THM growth process, to grow 75 mm diameter ingots, and our postgrowth annealing process. We have increased the thickness of our sliced wafers from 6 to 12 and 18 mm allowing the production of 10 and 15 mm thick detectors. As the detectors' thickness is scaled up, the energy resolution of both types, as pseudo-Frisch grid and pixelated monolithic detectors showed no degradation indicating improved materials uniformity and transport properties.

  19. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, Robert E.; Long, Mark O.; Drinkard, Jr., William F.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base.

  20. Recycling of CdTe photovoltaic waste

    DOEpatents

    Goozner, R.E.; Long, M.O.; Drinkard, W.F. Jr.

    1999-04-27

    A method for extracting and reclaiming metals from scrap CdTe photovoltaic cells and manufacturing waste by leaching the metals in dilute nitric acid, leaching the waste with a leaching solution comprising nitric acid and water, skimming any plastic material from the top of the leaching solution, separating the glass substrate from the liquid leachate, adding a calcium containing base to the leachate to precipitate Cd and Te, separating the precipitated Cd and Te from the leachate, and recovering the calcium-containing base. 3 figs.

  1. Annealing conditions for intrinsic CdTe

    NASA Astrophysics Data System (ADS)

    Berding, M. A.

    1999-01-01

    Equilibrium native defect densities in CdTe are calculated from ab initio methods, and compared with experimental results. We find that CdTe is highly compensated p type under tellurium-saturated conditions, with the cadmium vacancy as the dominant acceptor and the tellurium antisite as the compensating donor. This finding is in agreement with recent experiments that find a much larger deviation from stoichiometry than would be predicted by the electrically active defects. Under cadmium-saturated conditions, cadmium interstitials are predicted to dominate and the material is found to be n type. Native defect concentrations and the corresponding carrier concentrations are predicted as a function of processing conditions, and can serve as a guide to postgrowth anneals to manipulate the conductivity of undoped material for applications in x- and γ-ray spectrometers. Furthermore, we show that by choosing appropriate annealing conditions and extrinsic dopants, one can increase the operating efficiency of nuclear spectrometers by reducing the density of specific native defects that produce midgap trapping states.

  2. Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christian

    2014-03-12

    An impurity reaction-diffusion model is applied to Cu defects and related intrinsic defects in polycrystalline CdTe for a better understanding of Cu’s role in the cell level reliability of CdTe PV devices. The simulation yields transient Cu distributions in polycrystalline CdTe during solar cell processing and stressing. Preliminary results for Cu migration using available diffusivity and solubility data show that Cu accumulates near the back contact, a phenomena that is commonly observed in devices after back-contact processing or stress conditions.

  3. Process Development for High Voc CdTe Solar Cells

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2011-05-01

    This is a cumulative and final report for Phases I, II and III of this NREL funded project (subcontract # XXL-5-44205-10). The main research activities of this project focused on the open-circuit voltage of the CdTe thin film solar cells. Although, thin film CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, the efficiency of the CdTe solar cells have been stagnant for the last few years. This report describes and summarizes the results for this 3-year research project.

  4. The selective synthesis of water-soluble highly luminescent CdTe nanoparticles and nanorods: The influence of the precursor Cd/Te molar ratio

    NASA Astrophysics Data System (ADS)

    Deng, Da-Wei; Qin, Yuan-Bin; Yang, Xi; Yu, Jun-Sheng; Pan, Yi

    2006-11-01

    In this report, we initially systematically investigated the influence of the precursor Cd/Te molar ratio on the morphology of water-soluble thiol-stabilized CdTe nanocrystals. By only changing the precursor Cd/Te molar ratio, highly luminescent CdTe nanoparticles (NPs) and nanorods (NRs) can be prepared selectively in the presence of the same concentration single ligand ( L-cysteine or thioglycolic acid) system. A high precursor Cd/Te molar ratio leads to isotropic spherical growth, whereas a low Cd/Te molar ratio promotes the linear self-assembly of NPs into NRs. Thus, a new efficient strategy has been developed in aqueous phase to prepare selectively highly luminescent dot- or rod-shaped CdTe nanocrystals in single ligand system. Then, we further explored the influence of the properties of initial CdTe dispersions with different luminescence maxima on the formation of NRs. The experiment results revealed that the formation of CdTe NRs is also dependent on the properties of initial CdTe dispersions. CdTe NPs with short wavelength emission (˜520-550 nm) can self-assemble directly into high quality CdTe NRs after storage at room temperature.

  5. Preparation and properties of evaporated CdTe films compared with single crystal CdTe

    NASA Astrophysics Data System (ADS)

    Bube, R. H.

    The hot wall vacuum deposition system is discussed and is is good temperature tracking between the furnace core and the CdTe source itself are indicated. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates show no significant change in dark or light properties after open circuit storage for the next 9 months. CdTe single crystal boules were grown with P, As and Cs impurity. For P impurity it appears that the segregation coefficient is close to unity, that the value of hole density is controlled by the P, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.

  6. Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

    SciTech Connect

    Zaunbrecher, Katherine; Burst, James; Seyedmohammadi, Shahram; Malik, Roger; Li, Jian V.; Gessert, Timothy A.; Barnes, Teresa

    2015-06-14

    We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

  7. Accuracy of existing atomic potentials for the CdTe semiconductor compound

    NASA Astrophysics Data System (ADS)

    Ward, D. K.; Zhou, X. W.; Wong, B. M.; Doty, F. P.; Zimmerman, J. A.

    2011-06-01

    CdTe and CdTe-based Cd1-xZnxTe (CZT) alloys are important semiconductor compounds that are used in a variety of technologies including solar cells, radiation detectors, and medical imaging devices. Performance of such systems, however, is limited due to the propensity of nano- and micro-scale defects that form during crystal growth and manufacturing processes. Molecular dynamics simulations offer an effective approach to study the formation and interaction of atomic scale defects in these crystals, and provide insight on how to minimize their concentrations. The success of such a modeling effort relies on the accuracy and transferability of the underlying interatomic potential used in simulations. Such a potential must not only predict a correct trend of structures and energies of a variety of elemental and compound lattices, defects, and surfaces but also capture correct melting behavior and should be capable of simulating crystalline growth during vapor deposition as these processes sample a variety of local configurations. In this paper, we perform a detailed evaluation of the performance of two literature potentials for CdTe, one having the Stillinger-Weber form and the other possessing the Tersoff form. We examine simulations of structures and the corresponding energies of a variety of elemental and compound lattices, defects, and surfaces compared to those obtained from ab initio calculations and experiments. We also perform melting temperature calculations and vapor deposition simulations. Our calculations show that the Stillinger-Weber parameterization produces the correct lowest energy structure. This potential, however, is not sufficiently transferrable for defect studies. Origins of the problems of these potentials are discussed and insights leading to the development of a more transferrable potential suitable for molecular dynamics simulations of defects in CdTe crystals are provided.

  8. CdTe Solar Cells: The Role of Copper

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  9. Extracting Cu Diffusion Parameters in Polycrystalline CdTe

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Dragica, Vasileska; Ringhofer, Christian

    2014-06-13

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

  10. Modeling Copper Diffusion in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Guo, Da; Vasileska, Dragica; Ringhofer, Christain

    2014-06-06

    It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystalline, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately

  11. CdTe Photovoltaics for Sustainable Electricity Generation

    NASA Astrophysics Data System (ADS)

    Munshi, Amit; Sampath, Walajabad

    2016-04-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1-x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  12. CdTe Photovoltaics for Sustainable Electricity Generation

    NASA Astrophysics Data System (ADS)

    Munshi, Amit; Sampath, Walajabad

    2016-09-01

    Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

  13. Strategies for recycling CdTe photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Eberspacher, Chris; Gay, Charles F.; Moskowitz, Paul D.

    1994-12-01

    Recycling end-of-life cadmium telluride (CdTe) photovoltaic (PV) modules may enhance the competitive advantage of CdTe PV in the marketplace, but the experiences of industries with comparable Environmental, Health and Safety (EH&S) challenges suggest that collection and recycling costs can impose significant economic burdens. Customer cooperation and pending changes to US Federal law may improve recycling economics.

  14. High-quality CdTe films from nanoparticle precursors

    SciTech Connect

    Schulz, D.L.; Pehnt, M.; Urgiles, E.

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  15. A 4 π charged-particle detector array for light-ion-induced nuclear fragmentation studies

    NASA Astrophysics Data System (ADS)

    Kwiatkowski, K.; Alexander, A.; Bracken, D. S.; Brzychczyk, J.; Dorsett, J.; Ensman, R.; Renshaw Foxford, E.; Hamilton, T.; Komisarcik, K.; McDonald, K. N.; Morley, K. B.; Poehlman, J.; Powell, C.; Viola, V. E.; Yoder, N. R.; Ottarson, J.; Madden, N.

    1994-12-01

    Operating characteristics of the Indiana Silicon Sphere 4 π detector array are outlined. The detector geometry is spherical, with 90 telescopes in the forward hemisphere and 72 at backward angles, covering a total solid angle of 74% of 4π. Each telescope consists of a simple gas-ion chamber, operated with C3F8 gas, followed by a 0.5 mm thick ion-implanted silicon detector and a 28 mm CsI(Tl) crystal, readout by a photodiode. Custom-built bias supplies and NIM preamp/shaper modules were used in conjunction with commercial CFD, TDC and ADC CAMAC units.

  16. Aqueous synthesis of CdTe at FeOOH and CdTe at Ni(OH){sub 2} composited nanoparticles

    SciTech Connect

    Li Liang; Ren Jicun . E-mail: Jicunren@sjtu.edu.cn

    2006-06-15

    Two kinds of bi-functional nanomaterials, CdTe at FeOOH and CdTe at Ni(OH){sub 2}, were synthesized in water phase. In the synthesis, using the luminescent CdTe nanocrystals (NCs) as a core, Fe{sup 3+} (Ni{sup 2+}) was added to CdTe NCs aqueous solution and slowly hydrolyzed to deposit a layer of hydroxide onto the luminescent CdTe NCs in the presence of stabilizer. TEM, XRD, XPS, UV, fluorescence spectrometer and physical property measurement system (PPMS) were used to characterize the final products, and the results showed that the as-prepared nanoparticles with core/shell structure exhibited certain magnetic properties and fluorescence. - Graphical abstract: Fluorescent and magnetic bi-functional CdTe at FeOOH and CdTe at Ni(OH){sub 2} nanoparticles were prepared by seed-mediated approach in water phase.

  17. Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

    PubMed

    Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

    2009-04-01

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported. PMID:19472638

  18. CdTe Based Hard X-ray Imager Technology For Space Borne Missions

    NASA Astrophysics Data System (ADS)

    Limousin, Olivier; Delagnes, E.; Laurent, P.; Lugiez, F.; Gevin, O.; Meuris, A.

    2009-01-01

    CEA Saclay has recently developed an innovative technology for CdTe based Pixelated Hard X-Ray Imagers with high spectral performance and high timing resolution for efficient background rejection when the camera is coupled to an active veto shield. This development has been done in a R&D program supported by CNES (French National Space Agency) and has been optimized towards the Simbol-X mission requirements. In the latter telescope, the hard X-Ray imager is 64 cm² and is equipped with 625µm pitch pixels (16384 independent channels) operating at -40°C in the range of 4 to 80 keV. The camera we demonstrate in this paper consists of a mosaic of 64 independent cameras, divided in 8 independent sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique 1 cm² component, juxtaposable on its four sides. Recently, promising results have been obtained from the first micro-camera prototypes called Caliste 64 and will be presented to illustrate the capabilities of the device as well as the expected performance of an instrument based on it. The modular design of Caliste enables to consider extended developments toward IXO type mission, according to its specific scientific requirements.

  19. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tang, H. P.; Feng, J. Y.; Fan, Y. D.; Li, H. D.

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480°C, while CdTe growth inboth (100) and (111) orientations occured when the substrate preheating temperature was above 550°C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.

  20. Pressure-induced Phase Transition in Thiol-capped CdTe Nanoparticles

    SciTech Connect

    Wu, F; Zaug, J; Young, C; Zhang, J Z

    2006-11-29

    Phase transitions for CdTe nanoparticles (NPs) under high pressure up to 37.0 GPa have been studied using fluorescence measurements. The phase transition from cinnarbar to rocksalt phase has been observed in CdTe NPs solution at 5.8 GPa, which is much higher than the phase transition pressure of bulk CdTe (3.8 GPa) and that of CdTe NPs in solid form (0.8 GPa). CdTe NPs solution therefore shows elevated phase transition pressure and enhanced stability against pressure compared with bulk CdTe and CdTe NPs in solid forms. The enhanced stability of CdTe NPs solution has been attributed to possible shape change in the phase transition and/or inhomogeneous strains in nanoparticle solutions.

  1. CdTe Thin Film Solar Cells and Modules Tutorial; NREL (National Renewable Energy Laboratory)

    SciTech Connect

    Albin, David S.

    2015-06-13

    This is a tutorial presented at the 42nd IEEE Photovoltaics Specialists Conference to cover the introduction, background, and updates on CdTe cell and module technology, including CdTe cell and module structure and fabrication.

  2. CdTe solar cells on thin molybdenum substrates

    NASA Astrophysics Data System (ADS)

    Matulionis, Ilvydas

    2000-10-01

    We report on the development of Mo/(ZnTe:N)/CdTe/CdS/ITO (inverted structure) solar cells grown by radio frequency sputtering. The 0.1 mm thick molybdenum substrate is lightweight and flexible which is advantageous for both terrestrial and space applications. Conversion efficiencies close to 8 percent have been achieved for 5 square millimeter area devices. The photovoltaic activity has also been observed on similar cells deposited on Mo coated kapton and stainless steel substrates.

  3. Portable electro-mechanically cooled high-resolution germanium detector

    NASA Astrophysics Data System (ADS)

    Neufeld, K. W.; Ruhter, W. D.

    1995-05-01

    We have integrated a small, highly-reliable, electro-mechanical cryo-cooler with a high-resolution germanium detector for portable/field applications. The system weighs 6.8 kg and requires 40 watts of power to operate once the detector is cooled to its operating temperature. The detector is a 500 mm(exp 2) by 20-mm thick low-energy configuration that gives a full-width at half maximum (FWHM) energy resolution of 523 eV at 122 keV, when cooled with liquid nitrogen. The energy resolution of the detector, when cooled with the electro-mechanical cooler, is 570 eV at 122 keV. We have field tested this system in measurements of plutonium and uranium for isotopic and enrichment information using the MGA and MGAU analysis programs without any noticeable effects on the results.

  4. Comparison of photon counting and conventional scintillation detectors in a pinhole SPECT system for small animal imaging: Monte carlo simulation studies

    NASA Astrophysics Data System (ADS)

    Lee, Young-Jin; Park, Su-Jin; Lee, Seung-Wan; Kim, Dae-Hong; Kim, Ye-Seul; Kim, Hee-Joung

    2013-05-01

    The photon counting detector based on cadmium telluride (CdTe) or cadmium zinc telluride (CZT) is a promising imaging modality that provides many benefits compared to conventional scintillation detectors. By using a pinhole collimator with the photon counting detector, we were able to improve both the spatial resolution and the sensitivity. The purpose of this study was to evaluate the photon counting and conventional scintillation detectors in a pinhole single-photon emission computed tomography (SPECT) system. We designed five pinhole SPECT systems of two types: one type with a CdTe photon counting detector and the other with a conventional NaI(Tl) scintillation detector. We conducted simulation studies and evaluated imaging performance. The results demonstrated that the spatial resolution of the CdTe photon counting detector was 0.38 mm, with a sensitivity 1.40 times greater than that of a conventional NaI(Tl) scintillation detector for the same detector thickness. Also, the average scatter fractions of the CdTe photon counting and the conventional NaI(Tl) scintillation detectors were 1.93% and 2.44%, respectively. In conclusion, we successfully evaluated various pinhole SPECT systems for small animal imaging.

  5. Combining Surface Treatments with Shallow Slots to Improve the Spatial Resolution Performance of Continuous, Thick LYSO Detectors for PET

    PubMed Central

    Kaul, M.; Surti, S.; Karp, J.S.

    2013-01-01

    Positron emission tomography (PET) detectors based on continuous scintillation crystals can achieve very good performance and have a number of practical advantages compared to detectors based on a pixelated array of crystals. Our goal is to develop a thick continuous detector with high energy and spatial resolution, along with high γ-photon capture efficiency. We examine the performance of two crystal blocks: a 46 × 46 × 14 mm3 and a 48 × 48 × 25 mm3 block of LYSO (Lutetium Yttrium Orthosilicate). Using Maximum Likelihood (ML) positioning based upon the light response function (LRF) in the 14 mm thick crystal, we measure a spatial resolution of 3 mm in the central region of the crystal with degradation near the edges due to reflections off the crystal sides. We also show that we can match the spatial resolution achieved using a 14 mm thick crystal by using a 25 mm thick crystal with slots cut into the gamma entrance surface to narrow the LRF. We also find that we can improve the spatial resolution performance near the detector edges by reducing the reflectivity of the crystal sides, albeit with some loss in energy resolution. PMID:24077642

  6. High-temporal-resolution CdTe nuclear stethoscope for cardiac γ-ventriculography: preclinical evaluation

    NASA Astrophysics Data System (ADS)

    Eclancher, Bernard; Arntz, Y.; Chambron, Jacques; Prat, Vincent; Perret, C.; Karman, Miklos; Pszota, Agnes; Nemeth, Laszlo

    1999-10-01

    A hand-size probe including 64 elementary 5 X 5 X 2 mm CdTe detectors has been optimized to detect the (gamma) tracer 99Tc in the heart left ventricle. The system, has been developed, not for imaging, allowing acquisitions at 33 Hz to describe the labeled blood volume variations. The (gamma) -counts variations were found accurately proportional to the known volume variations of an artificial ventricle paced at variable rate and systolic volume. Softwares for on line data monitoring and for post-processing have been developed for beat to beat assessment of cardiac performance at rest and during physical exercise. The evaluation of this probe has been performed on 5 subjects in the Nucl Dep of Balatonfured Cardiology Hospital. It appears that the probe needs to be better shielded to work properly in the hot environment of the ventricle, but can provide reliable ventriculography, even under heavy exercise load, although the ventricle volume itself is unknown.

  7. Characterization of Pixelated Cadmium-Zinc-Telluride Detectors for Astrophysical Applications

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    Comparisons of charge sharing and charge loss measurements between two pixelated Cadmium-Zinc-Telluride (CdZnTe) detectors are discussed. These properties along with the detector geometry help to define the limiting energy resolution and spatial resolution of the detector in question. The first detector consists of a 1-mm-thick piece of CdZnTe sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). Signal readout is via discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). This crystal is bonded to a custom-built readout chip (ASIC) providing all front-end electronics to each of the 256 independent pixels. These detectors act as precursors to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation.

  8. High-Resolution PET Detector. Final report

    SciTech Connect

    Karp, Joel

    2014-03-26

    The objective of this project was to develop an understanding of the limits of performance for a high resolution PET detector using an approach based on continuous scintillation crystals rather than pixelated crystals. The overall goal was to design a high-resolution detector, which requires both high spatial resolution and high sensitivity for 511 keV gammas. Continuous scintillation detectors (Anger cameras) have been used extensively for both single-photon and PET scanners, however, these instruments were based on NaI(Tl) scintillators using relatively large, individual photo-multipliers. In this project we investigated the potential of this type of detector technology to achieve higher spatial resolution through the use of improved scintillator materials and photo-sensors, and modification of the detector surface to optimize the light response function.We achieved an average spatial resolution of 3-mm for a 25-mm thick, LYSO continuous detector using a maximum likelihood position algorithm and shallow slots cut into the entrance surface.

  9. Hard X-ray polarimetry with Caliste, a high performance CdTe based imaging spectrometer

    NASA Astrophysics Data System (ADS)

    Antier, S.; Ferrando, P.; Limousin, O.; Caroli, E.; Curado da Silva, R. M.; Blondel, C.; Chipaux, R.; Honkimaki, V.; Horeau, B.; Laurent, P.; Maia, J. M.; Meuris, A.; Del Sordo, S.; Stephen, J. B.

    2015-06-01

    Since the initial exploration of the X- and soft γ-ray sky in the 60's, high-energy celestial sources have been mainly characterized through imaging, spectroscopy and timing analysis. Despite tremendous progress in the field, the radiation mechanisms at work in sources such as neutrons stars, black holes, and Active Galactic Nuclei are still unclear. The polarization state of the radiation is an observational parameter which brings key additional information about the physical processes in these high energy sources, allowing the discrimination between competing models which may otherwise all be consistent with other types of measurement. This is why most of the projects for the next generation of space missions covering the few tens of keV to the MeV region require a polarization measurement capability. A key element enabling this capability, in this energy range, is a detector system allowing the identification and characterization of Compton interactions as they are the main process at play. The compact hard X-ray imaging spectrometer module, developed in CEA with the generic name of "Caliste" module, is such a detector. In this paper, we present experimental results for two types of Caliste-256 modules, one based on a CdTe crystal, the other one on a CdZnTe crystal, which have been exposed to linearly polarized beams at the European Synchrotron Radiation Facility (ESRF). These results, obtained at 200 and 300 keV, demonstrate the capability of these modules to detect Compton events and to give an accurate determination of the polarization parameters (polarization angle and fraction) of the incoming beam. For example, applying an optimized selection to our data set, equivalent to select 90° Compton scattered interactions in the detector plane, we find a modulation factor Q of 0.78 ± 0.06 in the 200-300 keV range. The polarization angle and fraction are derived with accuracies of approximately 1° and 5 % respectively for both CdZnTe and CdTe crystals. The

  10. Shockley-Read-Hall lifetimes in CdTe

    SciTech Connect

    Buurma, C.; Sivananthan, S.; Krishnamurthy, S.

    2014-07-07

    A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.

  11. Resetting the Defect Chemistry in CdTe

    SciTech Connect

    Metzger, Wyatt K.; Burst, James; Albin, David; Colegrove, Eric; Moseley, John; Duenow, Joel; Farrell, Stuart; Moutinho, Helio; Reese, Matt; Johnston, Steve; Barnes, Teresa; Perkins, Craig; Guthrey, Harvey; Al-Jassim, Mowafak

    2015-06-14

    CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill factor. Record-efficiency CdTe cells have been limited to Voc <; 880 mV, whereas GaAs can attain Voc of 1.10 V with a slightly smaller bandgap [2,3]. To overcome this barrier, we seek to understand and increase lifetime and carrier concentration in CdTe. In polycrystalline structures, lifetime can be limited by interface and grain-boundary recombination, and attaining high carrier concentration is complicated by morphology.

  12. Advances in CdTe R&D at NREL

    SciTech Connect

    Wu, X.; Zhou, J.; Keane, J. C.; Dhere, R. G.; Albin, D. S.; Gessert, T. A.; DeHart, C.; Duda, A.; Ward, J. J.; Yan, Y.; Teeter, G.; Levi, D. H.; Asher, S.; Perkins, C.; Moutinho, H. R.; To, B.

    2005-11-01

    This paper summarizes the following R&D accomplishments at National Renewable Energy Laboratory (NREL): (1) Developed several novel materials and world-record high-efficiency CdTe solar cell, (2) Developed "one heat-up step" manufacturing processes, and (3) Demonstrated 13.9% transparent CdTe cell and 15.3% CdTe/CIS polycrystalline tandem solar cell. Cadmium telluride has been well recognized as a promising photovoltaic material for thin-film solar cells because of its near-optimum bandgap of ~1.5 eV and its high absorption coefficient. Impressive results have been achieved in the past few years for polycrystalline CdTe thin-film solar cells at NREL. In this paper, we summarize some recent R&D activities at NREL.

  13. Thin film cadmium telluride charged particle sensors for large area neutron detectors

    SciTech Connect

    Murphy, J. W.; Smith, L.; Calkins, J.; Mejia, I.; Cantley, K. D.; Chapman, R. A.; Quevedo-Lopez, M.; Gnade, B.; Kunnen, G. R.; Allee, D. R.; Sastré-Hernández, J.; Contreras-Puente, G.; Mendoza-Pérez, R.

    2014-09-15

    Thin film semiconductor neutron detectors are an attractive candidate to replace {sup 3}He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to be an excellent material for thin film charged particle detectors—an integral component of a thin film neutron detector. The devices presented here are characterized in terms of their response to alpha and gamma radiation. Individual alpha particles are detected with an intrinsic efficiency of >80%, while the devices are largely insensitive to gamma rays, which is desirable so that the detector does not give false positive counts from gamma rays. The capacitance-voltage behavior of the devices is studied and correlated to the response due to alpha radiation. When coupled with a boron-based neutron converting material, the CdTe detectors are capable of detecting thermal neutrons.

  14. Thin film CdTe solar cells - A review

    NASA Astrophysics Data System (ADS)

    Basol, Bulent M.

    High-efficiency thin-film CdTe solar cells can be fabricated using various methods ranging from the wet chemical techniques such as electrodeposition to the more conventional semiconductor processing methods such as vacuum evaporation. An examination of these different methods reveals that there are similarities between the postdeposition treatments that the CdTe films are subjected to, before they are used for device fabrication. Some of the cell fabrication techniques are reviewed, and the processing steps common to all methods are highlighted.

  15. Electrical properties of single CdTe nanowires

    PubMed Central

    Matei, Elena; Florica, Camelia; Costas, Andreea; Toimil-Molares, María Eugenia

    2015-01-01

    Summary Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties. PMID:25821685

  16. Electron-hole dynamics in CdTe tetrapods.

    PubMed

    Malkmus, Stephan; Kudera, Stefan; Manna, Liberato; Parak, Wolfgang J; Braun, Markus

    2006-09-01

    We present transient absorption studies with femtosecond time resolution on the electron-hole dynamics in CdTe tetrapod nanostructures. Electron-hole pairs are generated by optical excitation in the visible spectral range, and an immediate bleach and induced absorption signal are observed. The relaxation dynamics to the lowest excitonic state is completed in about 6 ps. Experiments with polarized excitation pulses give information about the localization of the excited-state wave functions. The influence of the nanocrystal shape on the optical properties of CdTe nanoparticles is discussed. PMID:16942067

  17. High resolution gamma detector for small-animal positron emission tomography

    NASA Astrophysics Data System (ADS)

    Ling, Tao

    In this study, the performance of continuous miniature crystal element (cMiCE) detectors with LYSO crystals of different thickness were investigated. Potential designs of a cMiCE small animal positron emission tomography scanner were also evaluated by an analytical simulation approach. The cMiCE detector was proposed as a high sensitivity, low cost alternative to the prevailing discrete crystal detectors. A statistics based positioning (SBP) algorithm was developed to solve the scintillation position estimation problem and proved to be successful on a cMiCE detector with a 4 mm thick crystal. By assuming a Gaussian distribution, the distributions of the photomultiplier signals could be characterized by mean and variance, which are functions of scintillation position. After calibrating the detector on a grid of locations, a 2D table of the mean and variance can be built. The SBP algorithm searches the tables to find the location that maximizes the likelihood between the mean and variance of known positions and the incoming scintillation event. In this work, the performance of the SBP algorithm on cMiCE detectors with thicker crystals (6 and 8 mm) was studied. The stopping power of a cMiCE detector is 40% and 49% for 6 and 8 mm thick crystals respectively. The intrinsic spatial resolution is 1.2 mm and 1.4 mm FWHM for the center and corner sections of a 6 mm thick crystal detector, and 1.3 mm and 1.6 mm for center and corner of an 8 mm thick crystal detector. These results demonstrate that the cMiCE detector is a promising candidate for high resolution, high sensitivity PET applications. A maximum-likelihood (ML) clustering method was developed to empirically separate the experimental data set into two to four subgroups according to the depth-of-interaction of the detected photons. This method enabled us to build 2-DOI lookup tables (LUT) (mean and variance lookup tables for front group and back group). Using the 2-DOI SBP LUTs, the scintillation position and DOI

  18. ART-XC/SRG: status of the x-ray focal plane detector development

    NASA Astrophysics Data System (ADS)

    Levin, Vasily; Pavlinsky, Mikhail; Akimov, Valeriy; Kuznetsova, Maria; Rotin, Alexey; Krivchenko, Alexander; Lapshov, Igor; Oleinikov, Vladimir

    2014-07-01

    The Russian Space Research Institute (IKI) has developed CdTe detectors for the focal plane of the ART-XC/SRG instrument. The CdTe crystal has dimensions about 30 × 30 × 1 mm. Top and bottom sides of the detector each contain 48 strips and a guard ring. The ASIC VA64TA1 is connected to the CdTe crystal by AC-coupling for both DSSD sides. This approach allows one to have the same ground level for both electronic parts and to operate detectors with different leakage currents without reconfiguration of the VA64TA1 chips. One CdTe crystal and two ASICs are integrated with thermal sensors and Peltier cooler in a big hybrid integrated circuit. This detector is hermetically sealed by a cover with beryllium window. For ground testing the detector volume is filled with dry nitrogen. Peltier cooler is used during ground tests only. Together with the hermetic case package it allows us to operate the detector at low temperature during all ART-XC telescope development tests. When in space, the detector cooling will be provided by a radiator and heat pipes. Polarization rate temperature and voltage dependences as well as splitting charges between electrodes are being studied. IKI manufactured dozen X-ray cameras with detectors and supporting electronics for EM, QM and flight model of the ART-XC telescope. Spectroscopic and imaging performances of the detectors were tested on the IKI's X-Ray Calibration Facility. Current status of the focal plane detector development and testing will be presented.

  19. Improved process for the TlBr single-crystal detector

    NASA Astrophysics Data System (ADS)

    Kozlov, Vasilij; Andersson, Hans; Gostilo, Vladimir; Leskelä, Markku; Owens, Alan; Shorohov, Mihail; Sipilä, Heikki

    2008-06-01

    The combination of Bridgman, recrystallization by dissolving in pure water under hydrothermal conditions and travelling molten zone (TMZ) methods were used for TlBr purification. Detectors of 0.5 and 3 mm thickness were produced from a single crystal grown by the TMZ method. The samples had stable spectrometric characteristics from -40 °C to room temperature. A resolution of 3.7% at 60 keV ( 241Am source) was attained for 3-mm sample at 0 °C. Electrical and spectroscopic properties of the detectors are reported and discussed.

  20. Hard x-ray response of pixellated CdZnTe detectors

    SciTech Connect

    Abbene, L.; Caccia, S.; Bertuccio, G.

    2009-06-15

    In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm{sup 3} single crystals) have an anode layout based on an array of 256 pixels with a geometric pitch of 0.5 mm. The ASIC, fabricated in 0.8 mum BiCMOS technology, is equipped with eight independent channels (preamplifier and shaper) and characterized by low power consumption (0.5 mW/channel) and low noise (150-500 electrons rms). The spectroscopic results point out the good energy resolution of both detectors at room temperature [5.8% full width at half maximum (FWHM) at 59.5 keV for the 1 mm thick detector; 5.5% FWHM at 59.5 keV for the 2 mm thick detector) and low tailing in the measured spectra, confirming the single charge carrier sensing properties of the CdZnTe detectors equipped with a pixellated anode layout. Temperature measurements show optimum performance of the system (detector and electronics) at T=10 deg.C and performance degradation at lower temperatures. The detectors and the ASIC were developed by our collaboration as two small focal plane detector prototypes for hard x-ray multilayer telescopes operating in the 20-70 keV energy range.

  1. Electronics for the Si detectors in APEX

    SciTech Connect

    Wilt, P.R. |; Betts, R.R.; Freer, M.

    1994-07-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen`s, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC`s and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ``Mother board`` for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC`s. Function and performance of the individual modules as well as the system as a whole will be discussed.

  2. Electronics for the Si detectors in APEX

    NASA Astrophysics Data System (ADS)

    Wilt, P. R.; Betts, R. R.; Freer, M.; Happ, Th.; Maier, M. R.; Perara, P. A. A.; Rhein, M. D.; Robertson, M.; Sowinski, D.; Wolfs, F. L. H.

    1994-08-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen's, Rochester, Washington, and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC's and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, 'Mother board' for the charge amplifiers, eight channel shaper, 16 channel constant fraction discriminator (CFD), 16 channel peak-to-FERA (PTF), and the integration of the CFD and PTF with charge sensing ADC's. Function and performance of the individual modules as well as the system as a whole will be discussed.

  3. Semiconductor multiple-electrode detectors for measuring ionizing radiation at room temperature

    NASA Astrophysics Data System (ADS)

    Lingren, Clinton L.; Apotovsky, Boris A.; Butler, Jack F.; Conwell, Richard L.; Doty, F. Patrick; Friesenhahn, Stan J.; Oganesyan, A.; Pi, Bo; Zhao, S.

    1997-07-01

    Researchers at Digirad Corporation have developed an innovative method for eliminating the effects of hole trapping in radiation detectors made from compound semiconductors such as CdTe or CdZnTe. The technique involves no additional electronics. Working devices have been manufactured in a variety of configurations including imaging arrays. This paper presents results from some simple structures.

  4. Development and performance of a gamma-ray imaging detector

    NASA Astrophysics Data System (ADS)

    Gálvez, J. L.; Hernanz, M.; Álvarez, J. M.; La Torre, M.; Álvarez, L.; Karelin, D.; Lozano, M.; Pellegrini, G.; Ullán, M.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2012-09-01

    In the last few years we have been working on feasibility studies of future instruments in the gamma-ray range, from several keV up to a few MeV. The innovative concept of focusing gamma-ray telescopes in this energy range, should allow reaching unprecedented sensitivities and angular resolution, thanks to the decoupling of collecting area and detector volume. High sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators, e.g., Supernovae, Classical Novae, Supernova Remnants (SNRs), Gamma-Ray Bursts (GRBs), Pulsars, Active Galactic Nuclei (AGN). In order to achieve the needed performance, a gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. In order to fulfill the combined requirement of high detection efficiency with good spatial and energy resolution, an initial prototype of a gamma-ray imaging detector based on CdTe pixel detectors is being developed. It consists of a stack of several layers of CdTe detectors with increasing thickness, in order to enhance the gamma-ray absorption in the Compton regime. A CdTe module detector lies in a 11 x 11 pixel detector with a pixel pitch of 1mm attached to the readout chip. Each pixel is bump bonded to a fan-out board made of alumina (Al2O3) substrate and routed to the corresponding input channel of the readout ASIC to measure pixel position and pulse height for each incident gamma-ray photon. We will report the main features of the gamma-ray imaging detector performance such as the energy resolution for a set of radiation sources at different operating temperatures.

  5. High resistivity silicon radiation detectors

    NASA Astrophysics Data System (ADS)

    Segal, Julie Diane

    This work addresses the use of silicon detectors both for charged particles in a high energy physics application, and for electromagnetic radiation, specifically x-ray and γ-ray detectors. The second generation of a PIN diode array pixel detector integrated with full twin well CMOS was developed for high energy particle physics. A new vertical high voltage diode termination structure was developed and compared to other diode termination structures through simulations. The new structure reduced the process complexity and improved the yield and robustness to mechanical damage to the backside, allowing us to build a much larger detector with denser frontside patterning, implementing a new sparse-field read-out design. Radiation measurements from this pixel detector are presented, which represent the first integrated sparse-field read-out results ever reported. A prototype 1mm thick PIN diode array x-ray detector with a depletion voltage of 800V was simulated, designed and fabricated for protein crystallography. Using 2D simulations, an optimized 5 floating ring high voltage structure was designed and implemented. Preliminary measurements indicate that the detector can be operated successfully up to 1000V. A new cylindrical drift detector was developed for x-ray absorbtion spectroscopy. To minimize the drift time, an analytic expression for drift field and 2D simulations were used to optimize the applied surface potential for a uniform drift field. Three novel integrated transistors for first stage amplification were designed and fabricated, which show promise of working with fairly straightforward optimization. A new technique for controlling dark current due to surface generation was introduced and implemented successfully. Instead of collecting the surface current at a guard anode, surface generation is suppressed by putting n+ diffusion rings between the p+ rings, dramatically reducing the depleted oxide interface area which is the site for surface generation

  6. Electron transient transport in CdTe polycrystalline films

    NASA Astrophysics Data System (ADS)

    Ramírez-Bon, R.; Sánchez-Sinencio, F.; González de la Cruz, G.; Zelaya, O.

    1991-11-01

    Electron transient currents between coplanar electrodes have been measured in intrinsic polycrystalline films of CdTe, by means of the time of flight technique. The experimental results: electron transient current vs time, transit time vs voltage and the temperature dependence of the electron drift mobility, show features characteristics of dispersive electrical transport similar to that observed in disordered solids.

  7. Radiative and interfacial recombination in CdTe heterostructures

    SciTech Connect

    Swartz, C. H. Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H.; Zaunbrecher, K. N.

    2014-12-01

    Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

  8. CdTe nano-structures for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Corregidor, V.; Alves, L. C.; Franco, N.; Barreiros, M. A.; Sochinskii, N. V.; Alves, E.

    2013-07-01

    CdTe nano-structures with diameter of ∼100 nm and variable length (200-600 nm) were fabricated on glass substrates covered with conductive buffer layers such as NiCr, ZAO (ZnO:Al2O3 + Ta2O5) or TiPd alloys. The fabrication process consisted of the starting vapour deposition of metal catalyst dropped layer followed by the isothermal catalyst-prompted vapour growth of CdTe nano-structured layer of controllable shape and surface filling. The effect of buffer layers on the crystallographic orientation and thickness of CdTe nano-structured layers is investigated by means of IBA techniques, SEM and X-ray diffraction. It was shown that the formed CdTe nano-layers have a cubic structure, mainly oriented towards the [1 1 1] crystallographic direction, except for those grown on ZAO layer where the X-ray diffraction signal is very weak to be associated to any crystallographic form. The RBS spectra recorded on different areas of each sample type showed an almost constant thickness and SEM images revealed an homogeneous and dense distribution of the structures. It was also possible to study the first stage of the nano-structures grown on the Bi2Te3 seeds.

  9. Intracavity CdTe modulators for CO2 lasers.

    NASA Technical Reports Server (NTRS)

    Kiefer, J. E.; Nussmeier, T. A.; Goodwin, F. E.

    1972-01-01

    The use of cadmium telluride as an electrooptic material for intracavity modulation of CO2 lasers is described. Included are the predicted and measured effects of CdTe intracavity modulators on laser performance. Coupling and frequency modulation are discussed and experimental results compared with theoretically predicted performance for both techniques. Limitations on the frequency response of the two types of modulation are determined.

  10. Characterization of CdTe thin film solar cells

    NASA Astrophysics Data System (ADS)

    Ramanathan, V.; Russell, L.; Liu, C. H.; Meyers, P. V.; Ullal, H. S.

    Experimental results are presented for two types of solar cells produced from electrodeposited CdTe thin films, namely n-i-p CdS/CdTe/ZnTe and np CdS/CdTe structures. Properties of the n-i-p structure are highlighted and it is shown that the distribution of the electric field in the entire CdTe layer is crucial for producing high conversion efficiency solar cells. The properties of n-p and n-i-p devices of 0.08 sq cm area are compared and typical light I-V data are reported. Although neither device was fully optimized, the advantages of the n-i-p structure is reflected in increased short circuit current density, fill factor and as a reduced series resistance. The variation of the acceptor density (NA) with distance in the CdTe layer is shown for both devices. The zero bias depletion widths are 1.3 micron for the n-p and 1.58 micron for the n-i-p devices. The external quantum efficiency vs. wavelength for the two devices is given. For light incident from CdS side, the n-i-p device has a higher long wavelength response. Carriers generated deep in the CdTe are collected efficiently as the electric field extends throughout the i layer. Recombination in the field-free region of the n-p device is responsible for the losses. For short wavelength light, which is absorbed close to the CdTe surface, collection is limited due to diffusion and recombination. In the n-i-p device, however, these carriers are also collected by the drift field.

  11. Electrostatic assembles and optical properties of Au CdTe QDs and Ag/Au CdTe QDs

    NASA Astrophysics Data System (ADS)

    Yang, Dongzhi; Wang, Wenxing; Chen, Qifan; Huang, Yuping; Xu, Shukun

    2008-09-01

    Au-CdTe and Ag/Au-CdTe assembles were firstly investigated through the static interaction between positively charged cysteamine-stabilized CdTe quantum dots (QDs) and negatively charged Au or core/shell Ag/Au nano-particles (NCs). The CdTe QDs synthesized in aqueous solution were capped with cysteamine which endowed them positive charges on the surface. Both Au and Ag/Au NCs were prepared through reducing precursors with gallic acid obtained from the hydrolysis of natural plant poly-phenols and favored negative charges on the surface of NCs. The fluorescence spectra of CdTe QDs exhibited strong quenching with the increase of added Au or Ag/Au NCs. Railey resonance scattering spectra of Au or Ag/Au NCs increased firstly and decreased latter with the concentration of CdTe QDs, accompanied with the solution color changing from red to purple and colorless at last. Experimental results on the effects of gallic acid, chloroauric acid tetrahydrate and other reagents demonstrated the static interaction occurred between QDs and NCs. This finding reveals the possibilities to design and control optical process and electromagnetic coupling in hybrid structures.

  12. Large area silicon drift detectors for x-rays -- New results

    SciTech Connect

    Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.; Segal, J.D.; Kenney, C.J.; Bradley, J.; Hedman, B.; Hodgson, K.O.

    1999-06-01

    Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range {minus}75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was <0.5%.

  13. Si(Li) x-ray detectors with amorphous silicon passivation

    SciTech Connect

    Walton, J.T.; Pehl, R.H.; Wong, Y.K.; Cork, C.P.

    1983-10-01

    Lithium-drifted silicon (Si(Li)) detectors with thin lithium n/sup +/ contacts and amorphous silicon (..cap alpha..-Si) junction passivation are described. These detectors (7 mm thick, 9 cm/sup 2/ area) are intended for use in a six element detector array which is designed to measure trace amounts of plutonium in soil samples. Results are given showing a spectral resolution of approx. 400 eV (FWHM) for the 17.8 keV N/sub p/ L x-rays entering through either these detectors. Measurements on the effects of the fractional H/sub 2/ concentration on the electrical behavior of the ..cap alpha..-Si/Si interface are reported. The increase with time in the lithium window thickness when the detectors are stored at room temperature is discussed.

  14. Performance of the Nab segmented silicon detectors: GEANT4 and data

    NASA Astrophysics Data System (ADS)

    Frlez, Emil; Nab Collaboration

    2015-10-01

    The Nab Collaboration has proposed to measure neutron β-decay correlation parameters a and b at the Oak Ridge National Laboratory using a custom superconducting spectrometer and novel Si detectors. Two large area 2-mm thick silicon detectors, each segmented into 127 hexagonal pixels, will be used to detect the proton and electron from cold neutron decay. We present GEANT4 Monte Carlo simulations of the Si detector energy and timing responses to electrons below 1 MeV and to 30 keV protons with realistic simulated amplified anode waveforms. Both the data acquired with a prototype detector at Los Alamos National Laboratory with radioactive sources and the synthetic waveforms are analyzed by the same code. Energy and timing responses of the Si detectors are discussed, with the MC waveforms calibrated to the decay constants, baselines, noise, gains, and timing offsets extracted from measured data, pixel by pixel. Work supported by NSF Grants PHY-1126683, 1205833, 1307328, 1506320, and others.

  15. Large area silicon drift detectors for x-rays -- New results

    SciTech Connect

    Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.; Segal, J.D.; Kenney, C.J.; Bradley, J.; Hedman, B.; Hodgson, K.O.

    1998-12-31

    Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5%.

  16. Impact of detector design on imaging performance of a long axial field-of-view, whole-body PET scanner

    PubMed Central

    Surti, S; Karp, J S

    2015-01-01

    Current generation of commercial time-of-flight (TOF) PET scanners utilize 20–25 mm thick LSO or LYSO crystals and have an axial FOV (AFOV) in the range of 16–22 mm. Longer AFOV scanners would provide increased intrinsic sensitivity and require fewer bed positions for whole-body imaging. Recent simulation work has investigated the sensitivity gains that can be achieved with these long AFOV scanners, and has motivated new areas of investigation such as imaging with very low dose of injected activity as well as providing whole-body dynamic imaging capability in one bed position. In this simulation work we model a 72 cm long scanner and prioritize the detector design choices in terms of timing resolution, crystal size (spatial resolution), crystal thickness (detector sensitivity), and depth-of-interaction (DOI) measurement capability. The generated list data are reconstructed with a list-mode OSEM algorithm using a Gaussian TOF kernel that depends on the timing resolution and blob basis functions for regularization. We use lesion phantoms and clinically relevant metrics for lesion detectability and contrast measurement. The scan time was fixed at 10 minutes for imaging a 100 cm long object assuming a 50% overlap between adjacent bed positions. Results show that a 72 cm long scanner can provide a factor of ten reduction in injected activity compared to an identical 18 cm long scanner to get equivalent lesion detectability. While improved timing resolution leads to further gains, using 3 mm (as opposed to 4 mm) wide crystals does not show any significant benefits for lesion detectability. A detector providing 2-level DOI information with equal crystal thickness also does not show significant gains. Finally, a 15 mm thick crystal leads to lower lesion detectability than a 20 mm thick crystal when keeping all other detector parameters (crystal width, timing resolution, and DOI capability) the same. However, improved timing performance with 15 mm thick crystals can

  17. Impact of detector design on imaging performance of a long axial field-of-view, whole-body PET scanner

    NASA Astrophysics Data System (ADS)

    Surti, S.; Karp, J. S.

    2015-07-01

    Current generation of commercial time-of-flight (TOF) PET scanners utilize 20-25 mm thick LSO or LYSO crystals and have an axial FOV (AFOV) in the range of 16-22 mm. Longer AFOV scanners would provide increased intrinsic sensitivity and require fewer bed positions for whole-body imaging. Recent simulation work has investigated the sensitivity gains that can be achieved with these long AFOV scanners, and has motivated new areas of investigation such as imaging with a very low dose of injected activity as well as providing whole-body dynamic imaging capability in one bed position. In this simulation work we model a 72 cm long scanner and prioritize the detector design choices in terms of timing resolution, crystal size (spatial resolution), crystal thickness (detector sensitivity), and depth-of-interaction (DOI) measurement capability. The generated list data are reconstructed with a list-mode OSEM algorithm using a Gaussian TOF kernel that depends on the timing resolution and blob basis functions for regularization. We use lesion phantoms and clinically relevant metrics for lesion detectability and contrast measurement. The scan time was fixed at 10 min for imaging a 100 cm long object assuming a 50% overlap between adjacent bed positions. Results show that a 72 cm long scanner can provide a factor of ten reduction in injected activity compared to an identical 18 cm long scanner to get equivalent lesion detectability. While improved timing resolution leads to further gains, using 3 mm (as opposed to 4 mm) wide crystals does not show any significant benefits for lesion detectability. A detector providing 2-level DOI information with equal crystal thickness also does not show significant gains. Finally, a 15 mm thick crystal leads to lower lesion detectability than a 20 mm thick crystal when keeping all other detector parameters (crystal width, timing resolution, and DOI capability) the same. However, improved timing performance with 15 mm

  18. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    DOE PAGESBeta

    Yang, Ji -Hui; Yin, Wan -Jian; Park, Ji -Sang; Metzger, Wyatt; Wei, Su -Huai

    2016-01-25

    In this study, Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance ptype doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu willmore » prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.« less

  19. First-principles study of roles of Cu and Cl in polycrystalline CdTe

    NASA Astrophysics Data System (ADS)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Metzger, Wyatt; Wei, Su-Huai

    2016-01-01

    Cu and Cl treatments are important processes to achieve high efficiency polycrystalline cadmium telluride (CdTe) solar cells, thus it will be beneficial to understand the roles they play in both bulk CdTe and CdTe grain boundaries (GBs). Using first-principles calculations, we systematically study Cu and Cl-related defects in bulk CdTe. We find that Cl has only a limited effect on improving p-type doping and too much Cl can induce deep traps in bulk CdTe, whereas Cu can enhance p-type doping of bulk CdTe. In the presence of GBs, we find that, in general, Cl and Cu will prefer to stay at GBs, especially for those with Te-Te wrong bonds, in agreement with experimental observations.

  20. Materials for infrared detectors and sources; Proceedings of the Symposium, Boston, MA, Dec. 1-5, 1986

    NASA Astrophysics Data System (ADS)

    Farrow, R. F. C.; Schetzina, J. F.; Cheung, J. T.

    The present conference discusses epitaxial semiconductor structures for the IR, materials requirements for IR detectors and imagers, HgCdTe for LWIR imagers and heterojunction devices, epitaxial IV-VI semiconductor films, the growth of bulk IR sensor-material crystals, structure-property relationships in semiconductor alloys, high quality growth of CdTe by the gradient-freeze method, the electronic properties and vacancy-formation energies of HgCdTe vs HgZnTe, and the structure of hydrogenated amorphous carbon IR coatings. Also discussed are tailored microstructures for IR detection, the X-ray characterization of IR materials, subsurface microlattice strain mapping, deep-level defects in CdTe, the MBE HgTe growth process, interdiffused multilayer processing in alloy growth, HgTe-CdTe superlattices grown by photo-MOCVD, InSb in IR detector applications, and CdTe films grown on InSb substrates by organometallic epitaxy.

  1. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  2. Possibility of gated silicon drift detector detecting hard x-ray

    NASA Astrophysics Data System (ADS)

    Matsuura, Hideharu; Fukushima, Shinya; Sakurai, Shungo; Ishikawa, Shohei; Takeshita, Akinobu; Hidaka, Atsuki

    2015-08-01

    One of the authors has proposed a simple-structure silicon X-ray detector (gated silicon drift detector: GSDD), whose structure is much simpler than commercial silicon drift detectors (SDDs). SDDs contain multiple built-in metal-oxide-semiconductor field-effect transistors (MOSFETs) or implanted resistors, whose fabrication processes lower the yield rate of detectors, and also require at least two high-voltage sources. On the other hand, GSDDs do not contain built-in MOSFETs or implanted resistors. Moreover, GSDDs require only one high-voltage source. Therefore, GSDDs greatly reduce the cost of the X-ray detection system. We fabricated prototype GSDDs that contained 0.625-mm-thick Si substrates with an active area of 18 mm2, operated by Peltier cooling and a single voltage source. Its energy resolution at 5.9 keV from an 55Fe source was 145 eV at -38°C and -90°V. Thicker Si substrates are required to enhance its absorption of X-rays. To detect X-ray photons with energies up to 77 keV for X-ray absorbance higher than 15%, we simulate the electric potential distribution in GSDDs with Si thicknesses from 0.625 to 3.0 mm. We obtain an adequate electric potential distribution in the thicknesses of up to 3.0 mm, and the capacitance of the GSDD remains small and its X-ray count rate remain high. The high reverse bias required in the 3-mm-thick GSDD was a third of that in a 3-mm-thick pin diode.

  3. Review of Photovoltaic Energy Production Using CdTe Thin-Film Modules: Extended Abstract Preprint

    SciTech Connect

    Gessert, T. A.

    2008-09-01

    CdTe has near-optimum bandgap, excellent deposition traits, and leads other technologies in commercial PV module production volume. Better understanding materials properties will accelerate deployment.

  4. Imaging performance comparison between a LaBr{sub 3}:Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera

    SciTech Connect

    Russo, P.; Mettivier, G.; Pani, R.; Pellegrini, R.; Cinti, M. N.; Bennati, P.

    2009-04-15

    The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr{sub 3}:Ce scintillator continuous crystal (49x49x5 mm{sup 3}) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14x14x1 mm{sup 3}) with 256x256 square pixels and a pitch of 55 {mu}m, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 {mu}m, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

  5. Radiation detectors: needs and prospects

    SciTech Connect

    Armantrout, G.A.

    1981-01-01

    Important applications for x- and ..gamma..-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI/sub 2/, have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties.

  6. Dependence of CdTe response of bias history

    SciTech Connect

    Sites, J.R.; Sasala, R.A.; Eisgruber, I.L.

    1995-11-01

    Several time-dependent effect have been observed in CdTe cells and modules in recent years. Some appear to be related to degradation at the back contact, some to changes in temperature at the thin-film junction, and some to the bias history of the cell or module. Back-contact difficulties only occur in some cases, and the other two effects are reversible. Nevertheless, confusion in data interpretation can arise when these effects are not characterized. This confusion can be particularly acute when more than one time-dependent effect occurs during the same measurement cycle. The purpose of this presentation is to help categorize time-dependent effects in CdTe and other thin-film cells to elucidate those related to bias history, and to note differences between cell and module analysis.

  7. CdTe nanoparticles synthesized by laser ablation

    SciTech Connect

    Semaltianos, N. G.; Logothetidis, S.; Perrie, W.; Romani, S.; Potter, R. J.; Dearden, G.; Watkins, K. G.; Sharp, M.

    2009-07-20

    Nanoparticle generation by laser ablation of a solid target in a liquid environment is an easy, fast, and 'green' method for a large scale production of nanomaterials with tailored properties. In this letter we report the synthesis of CdTe nanoparticles by femtosecond laser [387 nm, 180 fs, 1 kHz, pulse energy=6 {mu}J (fluence=1.7 J/cm{sup 2})] ablation of the target material. Nanoparticles with diameters from {approx}2 up to {approx}25 nm were observed to be formed in the colloidal solution. Their size distribution follows the log-normal function with a statistical median diameter of {approx_equal}7.1 nm. Their crystal structure is the same as that of the bulk material (cubic zincblende) and they are slightly Cd-rich (Cd:Te percentage ratio {approx}1:0.9). Photoluminescence emission from the produced nanoparticles was detected in the deep red ({approx}652 nm)

  8. Research on single-crystal CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Borrego, J. M.; Ghandhi, S. K.

    1986-06-01

    This report outlines work carried out during Phase 1 of growth and characterization of single-crystal CdTe layers to explore their potential in high-efficiency solar cells. High-quality InSb layers can be grown by organometallic vapor phase epitaxy (OMVPE). Layers have been grown whose photoluminescence peak has a full width half maximum of 5.8 MeV, the lowest value achieved to date in epitaxial layers of this compound semiconductor. CdTe layers with featureless morphology were grown at 350 to 420 C. All layers are n-type. A hole lifetime of 1.5 micrometers was measured by optical techniques and corroborated by DLTS measurements. Both Schottky and p-n junction cells have been made on these layers. Device characteristics are contained in the report.

  9. Native defects in MBE-grown CdTe

    SciTech Connect

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  10. First principles modeling of grain boundaries in CdTe

    NASA Astrophysics Data System (ADS)

    Chan, Maria K. Y.; Sen, Fatih; Buurma, Christopher; Paulauskas, Tadas; Sun, Ce; Kim, Moon; Klie, Robert

    The role of extended defects is of significant interest for semiconductors, especially photovoltaics since energy conversion efficiencies are often affected by such defects. In particular, grain boundaries in CdTe photovoltaics are enigmatic since the achievable efficiencies of CdTe photovoltaics are higher in polycrystalline devices as compared to single crystalline devices. Yet, despite recent advances, the efficiency of poly-CdTe devices are still substantially below the theoretical maximum. We carry out an atomistic-level study using Scanning Transmission Electron Microscopy (STEM), together with first principles density functional theory (DFT) modeling, in order to understand the properties of specific bicrystals, i.e. artificial grain boundaries, constructed using wafer bonding. We discuss examples of bicrystals, including some involving large scale DFT calculations, and trends in defect and electronic properties. This work was funded by DOE SunShot BRIDGE program.

  11. Phosphorus Doping of Polycrystalline CdTe by Diffusion

    SciTech Connect

    Colegrove, Eric; Albin, David S.; Guthrey, Harvey; Harvey, Steve; Burst, James; Moutinho, Helio; Farrell, Stuart; Al-Jassim, Mowafak; Metzger, Wyatt K.

    2015-06-14

    Phosphorus diffusion in single crystal and polycrystalline CdTe material is explored using various methods. Dynamic secondary ion mass spectroscopy (SIMS) is used to determine 1D P diffusion profiles. A 2D diffusion model is used to determine the expected cross-sectional distribution of P in CdTe after diffusion anneals. Time of flight SIMS and cross-sectional cathodoluminescence corroborates expected P distributions. Devices fabricated with diffused P exhibit hole concentrations up to low 1015 cm-3, however a subsequent activation anneal enabled hole concentrations greater than 1016 cm-3. CdCl2 treatments and Cu based contacts were also explored in conjunction with the P doping process.

  12. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition

    SciTech Connect

    GIARE, C; RAO, S; RILEY, M; CHEN, L; Goyal, Amit; BHAT, I; LU, T; WANG, G

    2012-01-01

    CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

  13. Estimation of the heat capacity of CdTe semiconductor

    NASA Astrophysics Data System (ADS)

    Koç, Hüseyin; Eser, Erhan

    2016-01-01

    The aim of this paper is to provide a simple and reliable analytical expression for the thermodynamic properties calculated in terms of the Debye model using the binomial coefficient, and examine specific heat capacity of CdTe in the 300-1400 K temperature range. The obtained results have been compared with the corresponding experimental and theoretical results. The calculated results are in good agreement with the other results over the entire temperature range.

  14. Optical modeling of graphene contacted CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Aldosari, Marouf; Sohrabpoor, Hamed; Gorji, Nima E.

    2016-04-01

    For the first time, an optical model is applied on CdS/CdTe thin film solar cells with graphene front or back contact. Graphene is highly conductive and is as thin as a single atom which reduces the light reflection and absorption, and thus enhances the light transmission to CdTe layer for a wide range of wavelengths including IR. Graphene as front electrode of CdTe devices led to loss in short circuit current density of 10% ΔJsc ≤ 15% compared to the conventional electrodes of TCO and ITO at CdS thickness of dCdS = 100 nm. In addition, all the multilayer graphene electrodes with 2, 4, and 7 graphene layers led to Jsc ≤ 20 mA/cm2. Therefore, we conclude that a single monolayer graphene with hexagonal carbon network reduces optical losses and enhances the carrier collection measured as Jsc. In another structure design, we applied the optical model to graphene back contacted CdS/CdTe device. This scheme allows double side irradiation of the cell which is expected to enhance the Jsc. We obtained 1 ∼ 6 , 23, and 38 mA/cm2 for back, front and bifacial illumination of graphene contacted CdTe cell with CdS = 100 nm. The bifacial irradiated cell, to be efficient, requires an ultrathin CdTe film with dCdTe ≤ 1 μm. In this case, the junction electric field extends to the back region and collects out the generated carriers efficiently. This was modelled by absorptivity rather than transmission rate and optical losses. Since the literature suggest that ZnO can increase the graphene conductivity and enhance the Jsc, we performed our simulations for a graphene/ZnO electrode (ZnO = 100 nm) instead of a single graphene layer.

  15. High-efficiency, large-area CdTe panels

    NASA Astrophysics Data System (ADS)

    Albright, S. P.; Singh, V. P.; Ackerman, B.

    1989-04-01

    This technical progress report on large-area CdTe solar panels cover work accomplished from June 1987 to May 1988. The highest-efficiency devices produced during this period measured 10.6 percent efficient on a 0.302-cm(2) cell. On 11-7/8 in. by 12 in. panels, the highest output obtained was 5.3 W over 847 cm(2), or 7.0 percent active-area efficiency. The aperture-area efficiency is presently about 12 percent lower, or 6.3 percent efficiency, because of interconnection losses. A 4-ft(2) panel was also produced. Resistivities of less than 100 ohm-cm have been observed consistently in phosphorus- or copper-doped CdTe. Surface analysis is presented for various CdTe treatments. Devices were characterized and analyzed using electron-beam-induced current, capacitance, spectral response, and I-V curves at various temperatures. A model for junction transport is presented. An encapsulation system is described, and lifetime test results are presented.

  16. Challenges in p-type Doping of CdTe

    NASA Astrophysics Data System (ADS)

    McCoy, Jedidiah; Swain, Santosh; Lynn, Kelvin

    We have made progress in defect identification of arsenic and phosphorous doped CdTe to understand the self-compensation mechanism which will help improve minority bulk carrier lifetime and net acceptor density. Combining previous measurements of un-doped CdTe, we performed a systematic comparison of defects between different types of crystals and confirmed the defects impacting the doping efficiency. CdTe bulk crystals have been grown via vertical Bridgman based melt growth technique with varying arsenic and phosphorous dopant schemes to attain p-type material. Furnace temperature profiles were varied to influence dopant solubility. Large carrier densities have been reproducibly obtained from these boules indicating successful incorporation of dopants into the lattice. However, these values are orders of magnitude lower than theoretical solubility values. Infrared Microscopy has revealed a plethora of geometrically abnormal second phase defects and X-ray Fluorescence has been used to identify the elemental composition of these defects. We believe that dopants become incorporated into these second phase defects as Cd compounds which act to inhibit dopant solubility in the lattice.

  17. CdTe Feedstock Development and Validation: Cooperative Research and Development Final Report, CRADA Number CRD-08-00280

    SciTech Connect

    Albin, D.

    2011-05-01

    The goal of this work was to evaluate different CdTe feedstock formulations (feedstock provided by Redlen) to determine if they would significantly improve CdTe performance with ancillary benefits associated with whether changes in feedstock would affect CdTe cell processing and possibly reliability of cells. Feedstock also included attempts to intentionally dope the CdTe with pre-selected elements.

  18. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Su, Peng-Yu; Dahal, Rajendra; Wang, Gwo-Ching; Zhang, Shengbai; Lu, Toh-Ming; Bhat, Ishwara B.

    2015-09-01

    We report two different CdTe homojunction solar cell structures. Single-crystal CdTe homojunction solar cells were grown on GaAs single-crystal substrates by metalorganic chemical vapor deposition. Arsenic and iodine were used as dopants for p-type and n-type CdTe, respectively. Another homojunction solar cell structure was fabricated by growing n-type CdTe directly on bulk p-type CdTe single-crystal substrates. The electrical properties of the different layers were characterized by Hall measurements. When arsine was used as arsenic source, the highest hole concentration was ~6 × 1016 cm-3 and the activation efficiency was ~3%. Very abrupt arsenic doping profiles were observed by secondary ion mass spectrometry. For n-type CdTe with a growth temperature of 250°C and a high Cd/Te ratio the electron concentration was ~4.5 × 1016 cm-3. Because of the 300 nm thick n-type CdTe layer, the short circuit current of the solar cell grown on the bulk CdTe substrate was less than 10 mA/cm2. The open circuit voltage of the device was 0.86 V. According to a prediction based on measurement of short circuit current density ( J sc) as a function of open circuit voltage ( V oc), an open circuit voltage of 0.92 V could be achieved by growing CdTe solar cells on bulk CdTe substrates.

  19. The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

    NASA Technical Reports Server (NTRS)

    Parker, Bradford H.; Stahle, C. M.; Roth, D.; Babu, S.; Tueller, Jack; Powers, Edward I. (Technical Monitor)

    2001-01-01

    Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

  20. A large surface X-ray camera based on XPAD3/CdTe single chip hybrids

    NASA Astrophysics Data System (ADS)

    Cassol, F.; Blanc, N.; Bompard, F.; Boudet, N.; Boursier, Y.; Buton, C.; Clémens, J.-C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Dupont, M.; Graber-Bolis, J.; Hustache, S.; Morel, C.; Perez-Ponce, H.; Portal, L.; Vigeolas, E.

    2015-11-01

    The XPAD3 chip bump-bonded to a Si sensor has been widely used in preclinical micro-computed tomography and in synchrotron experiments. Although the XPAD3 chip is linear up to 60 keV, the performance of the XPAD3/Si hybrid detector is limited to energies below 30 keV, for which detection efficiencies remain above 20%. To overcome this limitation on detection efficiency in order to access imaging at higher energies, we decided to develop a camera based on XPAD3 single chips bump-bonded to high-Z CdTe sensors. We will first present the construction of this new camera, from the first tests of the single chip hybrids to the actual mechanical assembly. Then, we will show first images and stability tests performed on the D2AM beam line at ESRF synchrotron facility with the fully assembled camera.

  1. Design and Performance of the Soft Gamma-ray Detector for the NeXT mission

    SciTech Connect

    Tajima, Hiroyasu; Kamae, T.; Madejski, G.; Mitani, T.; Nakazawa, K.; Tanaka, T.; Takahashi, T.; Watanabe, S.; Fukazawa, Y.; Ikagawa, T.; Kataoka, J.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.; /SLAC /Sagamihara, Inst. Space Astron. Sci. /Tokyo U. /Hiroshima U. /Tokyo Inst. Tech. /Wako, RIKEN /Osaka U. /Saitama U.

    2006-04-19

    The Soft Gamma-ray Detector (SGD) on board the NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view (FOV), which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and CdTe (cadmium telluride) detectors. It can detect photons in a wide energy band (0.05-1 MeV) at a background level of 5 x 10{sup -7} counts/s/cm{sup 2}/keV; the silicon layers are required to improve the performance at a lower energy band (<0.3 MeV). Excellent energy resolution is the key feature of the SGD, allowing it to achieve both high angular resolution and good background rejection capability. An additional capability of the SGD, its ability to measure gamma-ray polarization, opens up a new window to study properties of astronomical objects. We will present the development of key technologies to realize the SGD: high quality CdTe, low noise front-end ASIC and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for Si strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  2. Design and performance of soft gamma-ray detector for NeXT mission

    SciTech Connect

    Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.; /Saitama U.

    2005-05-04

    The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5 x 10{sup -7} counts/s/cm{sup 2}/keV; the silicon layers are required to improve the performance at a lower energy band (<0.3 MeV). Excellent energy resolution is the key feature of the SGD to achieve both high angular resolution and good background rejection capability. Its ability to measure gamma-ray polarization opens up a new window to study gamma-ray emission in the universe. We will present the development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  3. Design and Performance of Soft Gamma-ray Detector for NeXT Mission

    NASA Astrophysics Data System (ADS)

    Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.

    The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5×10-7 counts/s/cm2/keV; the silicon layers are required to improve the performance at a lower energy band (<0.3 MeV). Excellent energy resolution is the key feature of the SGD to achieve both high angular resolution and good background rejection capability. Its ability to measure gamma-ray polarization opens up a new window to study gamma-ray emission in the universe. We will present the development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

  4. Absorption coefficient at 10.6 microm in CdTe modulator crystals.

    PubMed

    Tucker, A W; Birnbaum, M; Montes, H; Fincher, C L

    1982-08-15

    The bulk and surface absorption coefficients of CdTe modulator crystals at 10.6 microm were compared with those of single-crystal KC1 and NaCl which served to calibrate the laser calorimeter. High-resistivity (>10(7) ohm/cm) CdTe crystals exhibited a bulk absorption coefficient of 0.0014 cm(-1). PMID:20396150

  5. Homo-epitaxial growth of CdTe by sublimation under low pressure

    NASA Astrophysics Data System (ADS)

    Yoshioka, Yasushi; Yoda, Hiroki; Kasuga, Masanobu

    1991-12-01

    A new method to obtain a twin-free single crystal of CdTe on a CdTe substrate by sublimation is described. When CdTe(111)A substrates were employed for the homo-epitaxial growth of CdTe, twin crystals were frequently obtained. The substrate of CdTe(211)A and (211)B, however, gave no twins resulting in single crystals of high quality. The difference may come from the existence of many steps, sufficient to suppress two-dimensional nucleation and to promote step flow mechanism. To obtain twin-free films, therefore, a fairly large tilt angle of the substrate from a singular plane and a fairly low supersaturation are essential.

  6. Vapor phase epitaxy of CdTe on sapphire and GaAs

    NASA Astrophysics Data System (ADS)

    Kasuga, Masanobu; Futami, Hiroyuki; Iba, Yoshihiro

    1991-12-01

    CdTe films were deposited on three kinds of sapphire substrate and two kinds of GaAs substrate by open tube vapor transport. X-ray Laue diffraction study showed that CdTe(111) film grew on every kind of sapphire substrate used, i.e. on the (0001) basal plane, the (11 overline20)A plane and the (1 overline102)R plane, and that there exist a few degrees of tilt angel between CdTe(111) and the lattice plane of each substrate. The process of making the tilt angle may be explained by the atomistic mismatch model of the Cd and Al arrangement which is projected on the film-substrate interface. On GaAs(100), either CdTe(111) or CdTe(100) was obtained, whereas only a twin crystalline film was obtained on GaAs(111). These results are also consistent with the mismatch model of Cd and Ga atoms.

  7. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun; Chun, Seungju; Kim, Donghwan

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400 nm/min with a bandgap energy of 1.45–1.49 eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  8. Synthesis and characterization of high-ordered CdTe nanorods

    NASA Astrophysics Data System (ADS)

    Ma, Ligang; Wei, Zelu; Zhang, Fengming; Wu, Xiaoshan

    2015-12-01

    Cadmium telluride (CdTe) materials are an important absorbed layer and development solar energy conversion devices based on nano-fabrication techniques have attracted considerable interest in fabricating optoelectronic devices. Herein, through close-space sublimation method, vertically high-aligned CdTe nanorods are successfully obtained for the first time, with the help of Anodic Aluminum Oxide (AAO) template, which can perfectly control the morphology, diameter, and spacing among the CdTe nanorods. Its the crystal structure and optical properties are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman scattering, and photoluminescence. The results indicate that CdTe nanorods are textured polycrystalline with the cubic phase and bear good crystallinity. In addition, this deposition technique is a clean, inexpensive, high-throughput, versatile and reproducible for obtaining vertically aligned CdTe nanorod, which shows the potential applications in the future for the preparation of CdTe-based nanostructure solar cells.

  9. Growth of CdTe smoke particles prepared by gas evaporation technique

    NASA Astrophysics Data System (ADS)

    Kaito, Chihiro; Fujita, Kazuo; Shiojiri, Makoto

    1983-07-01

    CdTe smoke particles prepared by evaporating CdTe powder in Ar gas were studied by electron microscopy. The zinc-blende particles were formed in an atmosphere of Ar containing an excess Te vapor. The wurtzite particles were formed in an atmosphere of Ar containing an excess of Cd vapor. The lattice images of the CdTe crystal particles prepared by evaporating CdTe powder showed that the particles were composed of pure CdTe crystal. Tetrapod crystals with the wurtzite structure and with the zinc-blende structure grew from nuclei which have been identified to have the zinc-blende structure. A thin layer skin-like mechanism was observed on the particles formed by the excess Te vapor.

  10. Characterization of segmented Silicon detectors for neutron beta decay experiments

    NASA Astrophysics Data System (ADS)

    Salas, Americo; McGaughey, Patrick

    2012-03-01

    The ``Nab'', and ``UCNB'' collaborations will measure the correlation parameters ``a'', ``b'', and ``B'' that are found in the triple differential rate equation from neutron β-decay ( n ->p + e + νe). These parameters that offer an atractive platform for searches of signals of new physics beyond standard model will be measured using unpolarized cold neutrons (Nab) at SNS, ORNL,and polarized ultracold neutrons (UCNB) at LANL. Following a neutron β-decay the electron and proton, will be accelerated in a 4π-field spectrometer, and detected by a novel detector design consisting of two opposite large area and thick silicon detectors segmented in 127 pixels per detector, and operated at ˜ 100 Kelvin. We have successfully completed the first phase of detector characterization, operating 0.5, 1.0, and 1.5 mm thick Silicon detectors of 11 cm in diameter for neutron β-decay experiments at Los Alamos National Laboratory, and detected ˜ 300 Hz protons from 15 to 35 keV at NCSU with a FWHM resolution of ˜ 3.2 keV with a potential of another factor of two improvement. Custom amplifiers based on FETs mounted directly on the detector reduced the noise and made possible the proton detection.

  11. Influence of EDTA{sup 2-} on the hydrothermal synthesis of CdTe nanocrystallites

    SciTech Connect

    Gong Haibo; Hao Xiaopeng; Xu Xiangang

    2011-12-15

    Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd{sup 2+}. Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA{sup 2-}. Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: Black-Right-Pointing-Pointer EDTA serves as a strong ligand with Cd{sup 2+}. Black-Right-Pointing-Pointer The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. Black-Right-Pointing-Pointer With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Black-Right-Pointing-Pointer Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

  12. Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential.

    PubMed

    Zhou, Xiaowang; Ward, Donald K; Wong, Bryan M; Doty, F Patrick; Zimmerman, Jonathan A

    2012-08-23

    Cd(1-x)Zn(x)Te (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property nonuniformity that causes low manufacturing yield. Although tremendous efforts have been made in the past to reduce Te inclusions/precipitates in CZT, this has not resulted in an anticipated improvement in material property uniformity. Moreover, it is recognized that in addition to Te particles, dislocation cells can also cause electric field perturbations and the associated property nonuniformities. Further improvement of the material, therefore, requires that dislocations in CZT crystals be understood and controlled. Here, we use a recently developed CZT bond order potential to perform representative molecular dynamics simulations to study configurations, energies, and mobilities of 29 different types of possible dislocations in CdTe (i.e., x = 1) crystals. An efficient method to derive activation free energies and activation volumes of thermally activated dislocation motion will be explored. Our focus gives insight into understanding important dislocations in the material and gives guidance toward experimental efforts for improving dislocation network structures in CZT crystals. PMID:22962626

  13. Particle Detectors

    NASA Astrophysics Data System (ADS)

    Grupen, Claus; Shwartz, Boris

    2011-09-01

    Preface to the first edition; Preface to the second edition; Introduction; 1. Interactions of particles and radiation with matter; 2. Characteristic properties of detectors; 3. Units of radiation measurements and radiation sources; 4. Accelerators; 5. Main physical phenomena used for particle detection and basic counter types; 6. Historical track detectors; 7. Track detectors; 8. Calorimetry; 9. Particle identification; 10. Neutrino detectors; 11. Momentum measurement and muon detection; 12. Ageing and radiation effects; 13. Example of a general-purpose detector: Belle; 14. Electronics; 15. Data analysis; 16. Applications of particle detectors outside particle physics; 17. Glossary; 18. Solutions; 19. Resumé; Appendixes; Index.

  14. Selective Growth of CdTe on Nano-patterned CdS via Close-Space Sublimation

    NASA Astrophysics Data System (ADS)

    Aguirre, Brandon A.; Zubia, David; Ordonez, Rafael; Anwar, Farhana; Prieto, Heber; Sanchez, Carlos A.; Salazar, Maria T.; Pimentel, Alejandro. A.; Michael, Joseph R.; Zhou, Xiaowang; Mcclure, John C.; Nielson, Gregory N.; Cruz-Campa, Jose L.

    2014-07-01

    Selective-area deposition of CdTe on CdS via close-space sublimation is used to study the effect of window size (2 μm and 300 nm) on grain growth. The basic fabrication procedures for each of the layers (CdS, SiO2, and CdTe) and for achieving selective-area growth are presented. Selective-area growth of both micro- and nano-scale CdTe islands on CdS substrates using close-spaced sublimation is demonstrated. Scanning electron microscopy and electron backscatter diffraction microstructure analysis show that the micro-scale CdTe islands remain polycrystalline. However, when the island size is reduced to 300 nm, single crystal CdTe can be achieved within the windows. The CdTe grains were most often in the (101) orientation for both the micro- and nano-sized CdTe islands.

  15. Study of tellurium precipitates in CdTe crystals

    NASA Technical Reports Server (NTRS)

    Jayatirtha, H. N.; Henderson, D. O.; Burger, A.; Volz, M. P.

    1993-01-01

    The effect of tellurium precipitates was studied in medium resistivity (10 exp 3-10 exp 6 ohm cm) undoped and Cl-doped CdTe using differential scanning calorimetry (DSC) and mid-infrared spectroscopy and the results were correlated with near-infrared microscopy photographs. When present in a significant quantity (about 0.25 wt pct), we show that Te precipitates are detectable using DSC measurements. In the mid-infrared, the contribution of the absorption by free-carriers is negligible, and therefore, the effect of the Te precipitates in these crystals can be considered uncoupled from the effects of Cd vacancies.

  16. High-Efficiency, Commercial Ready CdTe Solar Cells

    SciTech Connect

    Sites, James R.

    2015-11-19

    Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

  17. Thermomechanical analysis in directional solidification of CdTe

    SciTech Connect

    Carlson, F.M.; Lee, T.; Moosbrugger, J.C.; Larson, D.J. Jr.

    1996-12-31

    Thermoelastic calculations for CdTe grown by the vertical Bridgman method are presented. Finite element calculations are verified by some experimental data. Solidification interface velocity, charge temperature and stress distributions are computed for prescribed ampoule withdrawal rates and several ampoule support systems. The support systems include various materials and seed-wafer transition zone geometries. Crystal stress in excess of the critical resolved shear stress is used as the figure of merit to judge the performance of a particular system. Emphasis is focused on the transition region between the seed and wafer. A processing strategy is proposed and desirable support system characteristics are presented.

  18. The High Energy Detector of Simbol-X

    SciTech Connect

    Meuris, A.; Limousin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Ferrando, P.; Lugiez, F.; Gevin, O.; Tauzin, G.; Herve, S.; Authier, M.

    2009-05-11

    The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

  19. The High Energy Detector of Simbol-X

    NASA Astrophysics Data System (ADS)

    Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Tauzin, G.; Hervé, S.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Authier, M.; Ferrando, P.

    2009-05-01

    The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

  20. RADIATION DETECTOR

    DOEpatents

    Wilson, H.N.; Glass, F.M.

    1960-05-10

    A radiation detector of the type is described wherein a condenser is directly connected to the electrodes for the purpose of performing the dual function of a guard ring and to provide capacitance coupling for resetting the detector system.

  1. Development of gamma-ray detector for lunar and planetary landing mission

    NASA Astrophysics Data System (ADS)

    Mitani, Takefumi; Inoue, Yousuke; Kobayashi, Shingo; Iijima, Yuichi; Takashima, Takeshi

    For a study of the origin and eveolution of a planet, its chemical composition holds an important information. The abundances of certain elements with different condensation temperature and with various types of geochemical behavior can provide valuable information for its history. Gamma-ray lines from the planet are generally used to determine the chemical composition of a planet without atmosphere. These gamma-ray lines are produded by the decay of nat-ural radionuclides or nuclear-reactions between planetary material and galactic cosmic rays. Abundance of elements is determined by measuring the intensity of gamma-ray lines specific to each element. From a orbital remote-sensing observation, global distribution of elements is acquired but its spatial resolution is limited, sim 10s km, because of difficulty of collimation of gamma-rays. Therefore in-situ gamma-ray observation is necessary to measure the elemental abundances in meter-scale topography. To survey the gamma-ray flux, a gamma-ray detec-tor aboard a rover on a planet is desired. Because of its limited electrical power and weight resources, we are developing small gamma-ray detector using a Cadmium Telluride (CdTe) semiconductor. CdTe has been regarded as a promising semiconductor material for gamma-ray detector because of such features as room temperature operation and large band-gap energy. The high atomic number of the materials gives a high absorption efficiency. On the surface of the moon, CdTe must be used in high temperature condition without any cooling system. Since CdTe spectral performance above room temperature is not established, we have examined the detector property in detail up to 40 degrees Celsius. Based on the results, we design total observation system and estimate the sensitivity of specific elements. Here we present the development status of gamma-ray detector system and the sensitivty estimate for the lunar observation.

  2. Recent developments in a CdTe-based x-ray detector for digital radiography

    NASA Astrophysics Data System (ADS)

    Glasser, Francis; Martin, Jean-Luc; Thevenin, Bernard; Schermesser, Patrick; Pantigny, Philippe; Laurent, Jean Yves; Rambaud, Philippe; Pitault, Bernard; Paltrier, Sylvain

    1997-05-01

    The performance of a new CdTe based x-ray detector devoted to digital radiography are presented. The detectors consist of a 6 cm2 CdTe 2D-array connected to CMOS readout circuit by indium bumps. The final image has 400 X 600 pixels with a 50 micron pitch. This solid-state detector presents the advantages of direct conversion, i.e. high stopping power with high spatial resolution and a significantly higher signal than commercially available scintillator/photodetector systems. The experimental results show excellent linearity, spatial resolution and detective quantum efficiency. The MTF was measured by the angled-slit method: 20 to 30 percent at 10 1p/mm depending on the incident x-ray energy. The measured DQE is about 0.8 at 40 KeV and 100 (mu) Gray dose. Our simulation shows that these experimental results do not reach the theoretical limit. Further improvements are in progress. The first industrial application will be dental radiography due to the small size and the excellent performances. We also tested the detector with x-rays form 20 KeV to 1.25 MeV. Of course the CdTe thickness should then be adapted to the incident x-ray energy.

  3. Mechanical Properties of Laser Heat Treated 6 mm Thick UHSS-Steel

    SciTech Connect

    Jaervenpaeae, Antti; Maentyjaervi, Kari; Maeaettae, Antti; Hietala, Mikko; Merklein, Marion; Karjalainen, Jussi

    2011-05-04

    In this work abrasion resistant (AR) steel with a sheet thickness of 6 mm was heat treated by a 4 kW Nd:YAG and a 4 kW Yb:Yag-laser, followed by self-quenching. In the delivered condition, test material blank (B27S) is water quenched from 920 deg. C. In this condition, fully martensitic microstructure provides excellent hardness of over 500 HB. The test material is referred to AR500 from now onwards. Laser heat treatment was carried out only on top surface of the AR500 sheet: the achieved maximum temperature in the cross-section varies as a function of the depth. Consequently, the microstructure and mechanical properties differ between the surfaces and the centre of the cross-section (layered microstructure). For better understanding, all layers were tested in tensile tests. For a wide heat treatment track, the laser beam was moved by scanning. Temperatures were measured using thermographic camera and thermocouples. Laser heat treated AR500 samples were tested in hardness tests and by air bending using a press brake machine. Microstructures were studied using a light microscope and FE-SEM/SEM-EBSD. At least three kind of microstructure layers were observed: 1) Dual-Phase ferritic/martensitic (T = A{sub C1}-A{sub C3}), 2) ferritic (T{approx}A{sub C3}) and 3) bainitic/martensitic (T>A{sub C3}).

  4. Mechanical Properties of Laser Heat Treated 6 mm Thick UHSS-Steel

    NASA Astrophysics Data System (ADS)

    Järvenpää, Antti; Mäntyjärvi, Kari; Merklein, Marion; määttä, Antti; Hietala, Mikko; Karjalainen, Jussi

    2011-05-01

    In this work abrasion resistant (AR) steel with a sheet thickness of 6 mm was heat treated by a 4 kW Nd:YAG and a 4 kW Yb:Yag-laser, followed by self-quenching. In the delivered condition, test material blank (B27S) is water quenched from 920° C. In this condition, fully martensitic microstructure provides excellent hardness of over 500 HB. The test material is referred to AR500 from now onwards. Laser heat treatment was carried out only on top surface of the AR500 sheet: the achieved maximum temperature in the cross-section varies as a function of the depth. Consequently, the microstructure and mechanical properties differ between the surfaces and the centre of the cross-section (layered microstructure). For better understanding, all layers were tested in tensile tests. For a wide heat treatment track, the laser beam was moved by scanning. Temperatures were measured using thermographic camera and thermocouples. Laser heat treated AR500 samples were tested in hardness tests and by air bending using a press brake machine. Microstructures were studied using a light microscope and FE-SEM/SEM-EBSD. At least three kind of microstructure layers were observed: 1) Dual-Phase ferritic/martensitic (T = AC1-AC3), 2) ferritic (T˜AC3) and 3) bainitic/martensitic (T>AC3).

  5. Left Ventricular Aneurysm with 1- to 2-mm-Thick Myocardium

    PubMed Central

    Liotta, Domingo; Del Río, Miguel; Gallo, Amelia; Frank, Luis; Tamashiro, Alberto; Schneider, Raúl

    1990-01-01

    From January 1983 to July 1985, 64 patients underwent left ventricular aneurysmectomy in our surgical unit. In 11 (17%) of these cases, the lesion was a variant of the true aneurysm that included an extremely thin (1- to 2-mm), well-defined area of myocardium. In 9 of the cases, the aneurysm was confirmed preoperatively by means of high-quality ventriculography (high resolution and many hues of gray). Surgical and pathologic criteria established the lesion's clinical significance. To the best of our knowledge, these aneurysms constitute a heretofore undescribed variant of the classic true left ventricular aneurysm, exhibiting certain gross characteristics of the false left ventricular aneurysm and sharing with false aneurysms their greater risk of rupture. While it is impossible to tell whether these aneurysms are progressing toward rupture, we believe that all such lesions should undergo urgent repair in the presence of cardiac symptoms. Following aneurysmectomy, ventriculoplasty or septoplasty using an elliptical woven Dacron patch helps to preserve the internal contour and surface anatomy of the ventricle. In our series, this procedure resulted in early and late postoperative mortality figures comparable to those associated with the surgical treatment of classic true left ventricular aneurysms. (Texas Heart Institute Journal 1990;17:337-45) Images PMID:15227526

  6. Raman characterization of a new Te-rich binary compound: CdTe2.

    PubMed

    Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

    2009-04-01

    Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te. PMID:19253976

  7. Comparison of NaI(T1), CdTe, and HgI2 surgical probes: effect of scatter compensation on probe performance.

    PubMed

    Kwo, D P; Barber, H B; Barrett, H H; Hickernell, T S; Woolfenden, J M

    1991-01-01

    Spatial variation in the background source distribution makes tumor detection difficult for single-detector probes. Using a single energy window that brackets the photopeak helps discriminate against background events dominated by Compton scattering. Another approach is to use the information provided by an additional window in the Compton region. The performances of NaI(T1), CdTe, and HgI2 surgical probes have been compared under realistic simulations of a tumor-staging procedure using optimal single-sided energy windows and a two-window scatter-subtraction technique. Results showed that despite the differences in energy resolution of the detectors, the performances of the probes in a variable background were similar when optimal single energy windows were used. When the background variations were large, using information provided by a second window improved probe performance. PMID:1870479

  8. Nonstoichiometric composition shift in physical vapor deposition of CdTe thin films

    NASA Astrophysics Data System (ADS)

    Chin, Ken K.; Cheng, Zimeng; Delahoy, Alan E.

    2015-05-01

    While it is being debated whether Cd vacancy is an effective p-dopant in CdTe, and whether CdTe thin film in solar energy application should be Cd-deficient or Cd-rich, in the theory of CdTe physical vapor deposition (PVD) it has been assumed that both the source material and the thin film product is stoichiometric. To remediate the lack of effective theory, a new PVD model for CdTe photovoltaic (PV) modules is presented in this work, in which the composition of the CdTe thin film under growth is a parameter determined by the source CdTe composition as well as the growth condition. The solid phase Cd1-δTe1+δ compound under deposition temperature is treated as a solid solution with a mole of excess pure Te or Cd as solute and one mole of congruently grown CdTe as solvent. Assuming that the vapor pressure of Te2 can be calculated by using the law of solid solution PTe=H0+aH1+a2H2 round the congruent composition, where the molar number a and the constants H0, H1 and H2 as functions of temperature T are extracted from the experimental data. Thus, the mole fraction of solute in the grown CdTe thin film as well as the growth rate, as a function of the solute mole fraction in the source CdTe can be determined.

  9. Portable Detector FY 2000 Task 4 Completion Report

    SciTech Connect

    Z. W. Bell; M. W. Moyer

    2001-02-01

    The fabrication of boron-covered crystal scintillation detectors is described. Bulk boron-loaded epoxy material was cast and cut into 0.5 mm-thick wafers that were mounted on CdWO{sub 4} and CsI(Tl) crystals. The crystals were mounted on miniature photomultiplier tubes and gamma spectra were obtained with the detectors. The ability of these small detectors to produce spectra that can be analyzed to provide isotopic identification has been demonstrated. In addition, the detector can produce a signature indicating the presence of neutrons. The same miniature size of these detectors that makes them attractive for hand-held portable use, may be a limiting factor in their efficiency. The small size of the scintillation crystals makes them not as efficient as larger NaI(Tl) crystals simply by virtue of significantly decreased sensitive volume and surface area. It may be worthwhile to consider slightly larger crystals (approximately 15 mm cubic CdWO{sub 4}) mounted on rectangular photomultipliers in a detecting head connected to the electronics package by a signal cable.

  10. The TORCH time-of-flight detector

    NASA Astrophysics Data System (ADS)

    Harnew, N.; Brook, N.; Castillo García, L.; Cussans, D.; Föhl, K.; Forty, R.; Frei, C.; Gao, R.; Gys, T.; Piedigrossi, D.; Rademacker, J.; Ros Garcia, A.; van Dijk, M.

    2016-07-01

    The TORCH time-of-flight detector is being developed to provide particle identification between 2 and 10 GeV/c momentum over a flight distance of 10 m. TORCH is designed for large-area coverage, up to 30 m2, and has a DIRC-like construction. The goal is to achieve a 15 ps time-of-flight resolution per incident particle by combining arrival times from multiple Cherenkov photons produced within quartz radiator plates of 10 mm thickness. A four-year R&D programme is underway with an industrial partner (Photek, UK) to produce 53×53 mm2 Micro-Channel Plate (MCP) detectors for the TORCH application. The MCP-PMT will provide a timing accuracy of 40 ps per photon and it will have a lifetime of up to at least 5 Ccm-2 of integrated anode charge by utilizing an Atomic Layer Deposition (ALD) coating. The MCP will be read out using charge division with customised electronics incorporating the NINO chipset. Laboratory results on prototype MCPs are presented. The construction of a prototype TORCH module and its simulated performance are also described.

  11. Single CdTe Nanowire Optical Correlator for Femtojoule Pulses.

    PubMed

    Xin, Chenguang; Yu, Shaoliang; Bao, Qingyang; Wu, Xiaoqin; Chen, Bigeng; Wang, Yipei; Xu, Yingxin; Yang, Zongyin; Tong, Limin

    2016-08-10

    On the basis of the transverse second harmonic generation (TSHG) in a highly nonlinear subwavelength-diameter CdTe nanowire, we demonstrate a single-nanowire optical correlator for femto-second pulse measurement with pulse energy down to femtojoule (fJ) level. Pulses to be measured were equally split and coupled into two ends of a suspending nanowire via tapered optical fibers. The couterpropagating pulses meet each other around the central area of the nanowire, and emit TSHG signal perpendicular to the axis of the nanowire. By transferring the spatial intensity profile of the transverse second harmonic (TSH) image into the time-domain temporal profile of the input pulses, we operate the nanowire as a miniaturized optical correlator. Benefitted from the high nonlinearity and the very small effective mode area of the waveguiding CdTe nanowire, the input energy of the single-nanowire correlator can go down to fJ-level (e.g., 2 fJ/pulse for 1064 nm 200 fs pulses). The miniature fJ-pulse correlator may find applications from low power on-chip optical communication, biophotonics to ultracompact laser spectroscopy. PMID:27414182

  12. Research on single-crystal CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Borrego, J. M.; Ghandhi, S. K.

    1987-10-01

    This report outlines two years of work on the growth and characterization of single-crystal CdTe layers, to explore their potential for high-efficiency solar cells. It was demonstrated that high-quality layers can be grown by organometallic vapor phase epitaxy (OMVPE), whose photoluminescence peak has a FWHM of 5.8 MeV, the lowest value for them yet achieved. CdTe layers were extrinsically doped both n- and p-type with indium and arsenic, respectively. The doping level achieved for p-type is the highest yet reported in the literature, achieved for the first time in an OMVPE system. A hole lifetime of 2.0 microns was measured. In the n-type material, five deep levels were isolated; their capture cross section, energy level, and concentration were determined. A thermodynamic analysis was made to identify their defect character. Both Schottky and p-n junction devices were produced on these layers. The diode characteristics were superior to those of GaAs so this is a potentially superior material for solar cells.

  13. Advanced CdTe Photovoltaic Technology: September 2007 - March 2009

    SciTech Connect

    Barth, K.

    2011-05-01

    During the last eighteen months, Abound Solar (formerly AVA Solar) has enjoyed significant success under the SAI program. During this time, a fully automated manufacturing line has been developed, fabricated and commissioned in Longmont, Colorado. The facility is fully integrated, converting glass and semiconductor materials into complete modules beneath its roof. At capacity, a glass panel will enter the factory every 10 seconds and emerge as a completed module two hours later. This facility is currently undergoing trials in preparation for large volume production of 120 x 60 cm thin film CdTe modules. Preceding the development of the large volume manufacturing capability, Abound Solar demonstrated long duration processing with excellent materials utilization for the manufacture of high efficiency 42 cm square modules. Abound Solar prototype modules have been measured with over 9% aperture area efficiency by NREL. Abound Solar demonstrated the ability to produce modules at industry leading low costs to NREL representatives. Costing models show manufacturing costs below $1/Watt and capital equipment costs below $1.50 per watt of annual manufacturing capacity. Under this SAI program, Abound Solar supported a significant research and development program at Colorado State University. The CSU team continues to make progress on device and materials analysis. Modeling for increased device performance and the effects of processing conditions on properties of CdTe PV were investigated.

  14. Thin-film CdTe and CuInSe{sub 2} photovoltaic technologies

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; von Roedern, B.G.

    1993-08-01

    Total-area conversion efficiency of 15%--15.8% have been achieved for thin-film CdTe and CIS solar cells. Modules with power output of 5--53 W have been demonstrated by several groups world-wide. Critical processes and reaction pathways for achieving excellent PV devices have been eluciated. Research, development and technical issues have been identified, which could result in potential improvements in device and module performance. A 1-kW thin-film CdTe array has been installed and is being tested. Multimegawatt thin-film CdTe manufacturing plants are expected to be completed in 1-2 years.

  15. Electronic structure of the quantum spin Hall parent compound CdTe and related topological issues

    NASA Astrophysics Data System (ADS)

    Ren, Jie; Bian, Guang; Fu, Li; Liu, Chang; Wang, Tao; Zha, Gangqiang; Jie, Wanqi; Neupane, Madhab; Miller, T.; Hasan, M. Z.; Chiang, T.-C.

    2014-11-01

    Cadmium telluride (CdTe), a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. We report herein a study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. Through a theoretical simulation a topological phase transition as well as the Dirac-Kane semimetal phase at the critical point was demonstrated in the mixed compound H gxC d1 -xTe .

  16. Time-resolved photoluminescence of polycrystalline CdTe grown by close-spaced sublimation

    SciTech Connect

    Keyes, B.; Dhere, R.; Ramanathan, K. )

    1994-06-30

    Polycrystalline CdTe has shown great promise as a low-cost material for thin-film, terrestrial photovoltaic applications, with efficiencies approaching 16% achieved with close-spaced sublimation (CSS)-grown CdTe. Due to the inherent complexities of polycrystalline material, much of the progress in this area has occurred through a slow trial-and-error process. This report uses time-resolved photoluminescence (TRPL) to characterize the CdTe material quality as a function of one basic growth parameter---substrate temperature. This characterization is done for two different glass substrate materials, soda-lime silicate and borosilicate.

  17. Growth and characterization of CdTe on GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Nouhi, A.; Liu, J.

    1988-01-01

    Epitaxial CdTe has been grown on both (100) GaAs/Si and (111) GaAs/Si substrates. A combination of molecular beam epitaxy and metal organic chemical vapor deposition have been employed to achieve this growth. The GaAs layers are grown in Si substrates by molecular beam epitaxy, followed by the growth of CdTe on GaAs/Si substra by metalorganic chemical vapor deposition. X-ray diffraction, photoluminescence, and scanning electron microscopy have been used to characterize the CdTe films.

  18. Effect of low energy ion irradiation on CdTe crystals: Luminescence enhancement

    SciTech Connect

    Olvera, J.; Plaza, J. L.; Dios, S. de; Dieguez, E.; Martinez, O.; Avella, M.

    2010-12-15

    In this work we show that low energy ion sputtering is a very efficient technique as a cleaning process for CdTe substrates. We demonstrate, by using several techniques like grazing-angle x-ray diffraction, cathodoluminescence, microluminescence, and micro-Raman spectroscopy that the luminescent properties of CdTe substrates can be very much increased when CdTe surfaces are irradiated with low energy Argon ions. We postulate that this enhancement is mainly due to the removal of surface damage induced by the cutting and polishing processes. The formation of a low density of nonluminescent aggregates after the sputtering process has also been observed.

  19. Imaging performance of the hybrid pixel detectors XPAD3-S

    NASA Astrophysics Data System (ADS)

    Brunner, F. Cassol; Clemens, J. C.; Hemmer, C.; Morel, C.

    2009-03-01

    Hybrid pixel detectors, originally developed for tracking particles in high-energy physics experiments, have recently been used in material sciences and macromolecular crystallography. Their capability to count single photons and to apply a threshold on the photon energy suggests that they could be optimal digital x-ray detectors in low energy beams such as for small animal computed tomography (CT). To investigate this issue, we have studied the imaging performance of photon counting hybrid pixel detectors based on the XPAD3-S chip. Two detectors are considered, connected either to a Si or to a CdTe sensor, the latter being of interest for its higher efficiency. Both a standard 'International Electrotechnical Commission' (IEC) mammography beam and a beam used for mouse CT results published in the literature are employed. The detector stability, linearity and noise are investigated as a function of the dose for several imaging exposures (~0.1-400 µGy). The perfect linearity of both detectors is confirmed, but an increase in internal noise for counting statistics higher than ~5000 photons has been found, corresponding to exposures above ~110 µGy and ~50 µGy for the Si and CdTe sensors, respectively. The noise power spectrum (NPS), the modulation transfer function (MTF) and the detective quantum efficiency (DQE) are then measured for two energy threshold configurations (5 keV and 18 keV) and three doses (~3, 30 and 300 µGy), in order to obtain a complete estimation of the detector performances. In general, the CdTe sensor shows a clear superiority with a maximal DQE(0) of ~1, thanks to its high efficiency (~100%). The DQE of the Si sensor is more dependent on the radiation quality, due to the energy dependence of its efficiency its maximum is ~0.4 with respect to the softer radiation. Finally, we compare the XPAD3-S DQE with published curves of other digital devices in a similar radiation condition. The XPAD3-S/CdTe detector appears to be the best with the highest

  20. Early operating experience with large-area germanium detectors for detecting low-energy photons

    SciTech Connect

    Rieksts, G.A.; Lynch, T.P.; Olsen, P.C.

    1994-11-01

    Intrinsic germanium (Ge) planar detector arrays have been used at Hanford for lung counting since 1983. This paper describes a counting system using an array of only four detectors, larger than those used in the past, using larger dewars and a simplified detector-positioning system. Typical detector elements have been 51 mm in diameter and 20 mm thick, with a beryllium window thickness of 0.51 mm. The resolution of the detectors has been about 560 eV for 6.4-keV x-rays and 700 eV for 122-keV gamma rays. In the past, arrays of three, four, five, and six detectors have been employed. Six detectors have been the preferred configuration for lung counting. Up to 3,000 counts annually have been performed with these systems. When detectors fail and spares are not available, calibrations and calculational algorithms are maintained for four-detector configurations. For several years, both ``bucket`` and ``stovepipe`` designs have been used for the Dewars with the 15-liter dewars proving to be much more reliable than the ``stovepipe`` designs.

  1. Development of Si-APD Timing Detectors for Nuclear Resonant Scattering using High-energy Synchrotron X-rays

    SciTech Connect

    Kishimoto, Shunji; Zhang Xiaowei

    2007-01-19

    A timing detector with silicon avalanche photodiodes (Si-APDs) has been developed for nuclear resonant scattering using synchrotron x-rays. The detector had four pairs of a germanium plate 0.1mm thick and a Si-APD (3 mm in dia., a depletion layer of 30-{mu}m thickness). Using synchrotron x-rays of 67.4 keV, the efficiency increased to 1.5% for the incident beam, while the efficiency was 0.76 % without the germanium converters. A measurement of SR-PAC on Ni-61 was executed by using the detector. Some other types of timing detectors are planned for x-rays of E>20 keV.

  2. Facile preparation of highly luminescent CdTe quantum dots within hyperbranched poly(amidoamine)s and their application in bio-imaging

    PubMed Central

    2014-01-01

    A new strategy for facile preparation of highly luminescent CdTe quantum dots (QDs) within amine-terminated hyperbranched poly(amidoamine)s (HPAMAM) was proposed in this paper. CdTe precursors were first prepared by adding NaHTe to aqueous Cd2+ chelated by 3-mercaptopropionic sodium (MPA-Na), and then HPAMAM was introduced to stabilize the CdTe precursors. After microwave irradiation, highly fluorescent and stable CdTe QDs stabilized by MPA-Na and HPAMAM were obtained. The CdTe QDs showed a high quantum yield (QY) up to 58%. By preparing CdTe QDs within HPAMAM, the biocompatibility properties of HPAMAM and the optical, electrical properties of CdTe QDs can be combined, endowing the CdTe QDs with biocompatibility. The resulting CdTe QDs can be directly used in biomedical fields, and their potential application in bio-imaging was investigated. PMID:24624925

  3. Atomic-force microscopy and photoluminescence of nanostructured CdTe

    SciTech Connect

    Babentsov, V.; Sizov, F.; Franc, J.; Luchenko, A.; Svezhentsova, E. Tsybrii, Z.

    2013-09-15

    Low-dimensional CdTe nanorods with a diameter of 10-30 nm and a high aspect ratio that reaches 100 are studied. The nanorods are grown by the physical vapor transport method with the use of Bi precipitates on the substrates. In addition, thin films of closely packed CdTe nanorods with the transverse dimensions {approx}(100-200) nm are grown. Atomic-force microscopy shows that the cross sections of all of the nanorods were hexagonally shaped. By photoluminescence measurements, the inference about the wurtzite structure of CdTe is supported, and the structural quality, electron-phonon coupling, and defects are analyzed. On the basis of recent ab initio calculations, the nature of defects responsible for the formation of deep levels in the CdTe layers and bulk crystals are analyzed.

  4. APT mass spectrometry and SEM data for CdTe solar cells

    DOE PAGESBeta

    Li, Chen; Paudel, Naba R.; Yan, Yanfa; Pennycook, Stephen J.; Poplawsky, Jonathan D.; Guo, Wei

    2016-03-16

    Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl2 treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl2-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. As a result, these data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparationmore » of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.« less

  5. First-Principles Study of Back Contact Effects on CdTe Thin Film Solar Cells

    SciTech Connect

    Du, Mao-Hua

    2009-01-01

    Forming a chemically stable low-resistance back contact for CdTe thin-film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back-contact material, Sb{sub 2}Te{sub 3}, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar-cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb{sub 2}Te{sub 3} back contacts.

  6. Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

    NASA Astrophysics Data System (ADS)

    Schwenke, M.; Zuber, K.; Janutta, B.; He, Z.; Zeng, F.; Anton, G.; Michel, T.; Durst, J.; Lück, F.; Gleixner, T.; Gössling, C.; Schulz, O.; Köttig, T.; Krawczynski, H.; Martin, J.; Stekl, I.; Cermak, P.

    2011-09-01

    The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

  7. Smoke Detector

    NASA Technical Reports Server (NTRS)

    1979-01-01

    In the photo, Fire Chief Jay Stout of Safety Harbor, Florida, is explaining to young Richard Davis the workings of the Honeywell smoke and fire detector which probably saved Richard's life and that of his teen-age brother. Alerted by the detector's warning, the pair were able to escape their burning home. The detector in the Davis home was one of 1,500 installed in Safety Harbor residences in a cooperative program conducted by the city and Honeywell Inc.

  8. Development of a novel scintillation-trigger detector for the MTV experiment using aluminum-metallized film tapes

    NASA Astrophysics Data System (ADS)

    Tanaka, S.; Ozaki, S.; Sakamoto, Y.; Tanuma, R.; Yoshida, T.; Murata, J.

    2014-07-01

    A new type of a trigger-scintillation counter array designed for the MTV experiment at TRIUMF-ISAC has been developed, which uses aluminum-metallized film tape for wrapping to achieve the required assembling precision of ±0.5 mm. The MTV experiment uses a cylindrical drift chamber (CDC) as the main electron-tracking detector. The barrel-type trigger counter is placed inside the CDC to generate a trigger signal using 1 mm thick, 300 mm long thin plastic scintillation counters. Detection efficiency and light attenuation compared with conventional wrapping materials are studied.

  9. Formation and Properties of Polycrystalline p-Type High-Conductivity CdTe Films by Coevaporation of CdTe and Te

    NASA Astrophysics Data System (ADS)

    Hayashi, Toshiya; Hayashi, Hiroaki; Fukaya, Mitsuru; Ema, Yoshinori

    1991-10-01

    Polycrystalline p-type high-dark-conductivity CdTe films have been prepared by coevaporation of CdTe and Te. The structural and electrical properties were investigated. The dark conductivity of the films at 300 K ranged from 6.32× 10-8 to 3.41 S cm-1. The film structure was of the zincblende type with a preferential orientation of the (111) planes parallel to the substrate. The crystallinity was rather good. From the measurements of the carrier concentration versus ambient temperature characteristics, it was found that the high-conductivity p-type conduction of the films was due to the formation of Cd vacancies, acceptors resulting from the coevaporation of CdTe and Te. It is shown that the high-conductivity films obtained are suitable for p-CdTe/n-CdS solar cells.

  10. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

    NASA Astrophysics Data System (ADS)

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-01

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

  11. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    SciTech Connect

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  12. Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole.

    PubMed

    Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

    2015-04-15

    Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL(-1) (3.4 ng mL(-1)) and the quantitative determination range was 0-2.8 μg mL(-1) with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results. PMID:25659737

  13. Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

    NASA Astrophysics Data System (ADS)

    Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

  14. Photovoltaic properties of CdTe layers grown by OMVPE

    NASA Astrophysics Data System (ADS)

    Bhimnathwala, H. G.; Taskar, N. R.; Lee, W. I.; Bhat, I.; Ghandhi, S. K.

    Photovoltaic characteristics of single-crystal cadmium telluride epitaxial layers grown by organometallic vapor phase epitaxy (OMVPE) on InSb substrates are reported. Electrical characterization of Schottky solar cells fabricated by depositing thin transparent gold shows that a hole diffusion length of 2 microns can be obtained in n-CdTe. The current flow in the p-n junction in the forward bias is determined by recombination in the depletion region. Theoretical calculations show that n+p CdTe solar cells could have an open-circuit voltage of 0.90 V, a short-circuit current of 22.2 mA/sq cm and an efficiency of 21 percent under AM1.5 illumination.

  15. Theoretical study of intrinsic defects in CdTe

    NASA Astrophysics Data System (ADS)

    Menéndez-Proupin, E.; Orellana, W.

    2016-05-01

    The quantum states and thermodynamical properties of the Cd and Te vacancies in CdTe are studied by first principles calculations. It is shown that the band structure of a cubic 64-atoms supercell with a Te vacancy is dramatically different from the band structure of the perfect crystal, suggesting that it cannot be used as model to calculate isolated defects. This flaw is solved modeling the Te vacancy within a cubic 216-atoms supercell. However, even with this large supercell, the 2— charge state relaxes to an incorrect distorted structure. This distortion is driven by partial filling of the conduction band induced by the k-point sampling. The correct structures and formation energies are obtained by relaxation with restriction of system symmetry, followed by band-filling correction to the energy, or by using a larger supercell that allows sampling the Brillouin zone with a single k-point.

  16. Fire Detector

    NASA Technical Reports Server (NTRS)

    1978-01-01

    An early warning fire detection sensor developed for NASA's Space Shuttle Orbiter is being evaluated as a possible hazard prevention system for mining operations. The incipient Fire Detector represents an advancement over commercially available smoke detectors in that it senses and signals the presence of a fire condition before the appearance of flame and smoke, offering an extra margin of safety.

  17. Optical Detectors

    NASA Astrophysics Data System (ADS)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  18. Metal Detectors.

    ERIC Educational Resources Information Center

    Harrington-Lueker, Donna

    1992-01-01

    Schools that count on metal detectors to stem the flow of weapons into the schools create a false sense of security. Recommendations include investing in personnel rather than hardware, cultivating the confidence of law-abiding students, and enforcing discipline. Metal detectors can be quite effective at afterschool events. (MLF)

  19. Semiconductor P-I-N detector

    SciTech Connect

    Sudharsanan, Rengarajan; Karam, Nasser H.

    2001-01-01

    A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

  20. Gaseous Detectors

    NASA Astrophysics Data System (ADS)

    Titov, Maxim

    Since long time, the compelling scientific goals of future high-energy physics experiments were a driving factor in the development of advanced detector technologies. A true innovation in detector instrumentation concepts came in 1968, with the development of a fully parallel readout for a large array of sensing elements - the Multi-Wire Proportional Chamber (MWPC), which earned Georges Charpak a Nobel prize in physics in 1992. Since that time radiation detection and imaging with fast gaseous detectors, capable of economically covering large detection volumes with low mass budget, have been playing an important role in many fields of physics. Advances in photolithography and microprocessing techniques in the chip industry during the past decade triggered a major transition in the field of gas detectors from wire structures to Micro-Pattern Gas Detector (MPGD) concepts, revolutionizing cell-size limitations for many gas detector applications. The high radiation resistance and excellent spatial and time resolution make them an invaluable tool to confront future detector challenges at the next generation of colliders. The design of the new micro-pattern devices appears suitable for industrial production. Novel structures where MPGDs are directly coupled to the CMOS pixel readout represent an exciting field allowing timing and charge measurements as well as precise spatial information in 3D. Originally developed for the high-energy physics, MPGD applications have expanded to nuclear physics, photon detection, astroparticle and neutrino physics, neutron detection, and medical imaging.

  1. Development of CZT detectors for x-ray and gamma-ray astronomy

    NASA Astrophysics Data System (ADS)

    Lee, Kuen; Martin, J. W.; Garson, A., III; Guo, Q.; Matteson, J.; Groza, M.; Beilicke, M.; Burger, A.; de Geronimo, G.; Krawczynski, H.

    2011-09-01

    Cadmium Zinc Telluride (CZT) is the detector material of choice for the detection of X-rays in the 10 keV-1MeV energy band with excellent spatial and energy resolutions and without cryogenic cooling. In this contribution, we report on recent results of the CZT detector development program and several astrophysical experiments which make use of CZT detectors. In the first part of the paper, we discuss the performance of pixel and cross-strip CZT detectors read out with an ASIC developed at the Brookhaven National Laboratory. Our pixel detectors achieve some of the best energy resolutions reported in the literature. Cross-strip detectors are found to give an inferior performance and we investigate the reason for this performance difference. We also present results from a precision measurement of the effect of a steering grid on multi-pixel events obtained with a 200 micrometer collimator. In the second part of the paper, we describe the design and performance of the hard X-ray polarimeter X-Calibur. The polarimeter uses a 14 cm long scintillator scatterer, surrounded by an assembly of 32 2-5 mm thick CZT detectors. We discuss the sensitivity of the polarimeter to measure the linear polarization of 10 keV-80 keV X-rays on short and long balloon flights and results from testing the polarimeter in the laboratory.

  2. A 1200 element detector system for synchrotron-based coronary angiography

    SciTech Connect

    Thompson, A.C.; Lavender, W.M.; Rubenstein, E.; Giacomini, J.C.; Rosso, V.; Schulze, C.; Chapman, D.; Thomlinson, W.

    1993-08-23

    A 1200 channel Si(Li) detector system has been developed for transvenous coronary angiography experiments using synchrotron radiation. It is part of the synchrotron medical imaging facility at the National Synchrotron Light Source. The detector is made from a single crystal of lithium-drifted silicon with an active area 150 mm long {times} 11 mm high {times} 5 mm thick. The elements are arranged in two parallel rows of 600 elements with a center-to-center spacing of 0.25 mm. All 1200 elements are read out simultaneously every 4 ms. A Intel 80486 based computer with a high speed digital signal processing interface is used to control the beamline hardware and to acquire a series of images. The signal-to-noise, linearity and resolution of the system have been measured. Human images have been taken with this system.

  3. Growth, characterization and fabrication of thick detectors from as-grown Cd0.9Zn0.1Te:In by traveling heater method

    NASA Astrophysics Data System (ADS)

    Roy, U. N.; Weiler, S.; Stein, J.; Groza, M.; Cui, Y.; Buliga, V.; Burger, A.

    2011-09-01

    CdZnTe, commonly known as CZT is the material of paramount importance for hard X-ray and gamma ray spectroscopy and imaging applications at room temperature. Over the years, the quality of CZT crystals and its charge transport properties has improved significantly making it an attractive detector material especially for homeland security applications. The applications for homeland security demand large and thick detectors to provide a sufficient stopping power for fast detection of high energy gamma photons. In this present report we have grown two inch diameter CZT by Traveling heater method (THM) technique. The as-grown crystals were characterized through photoluminescence (PL) mapping for composition uniformity, growth interface study, Te precipitations/inclusions studies. In order to evaluate our as-grown samples, charge transport characteristics have been studied for thick samples up to ~16mm thick. It has been demonstrated that by controlling the growth interface, visualization of large and thick (~16mm thick) detectors with fairly good response is possible from as-grown CZT detectors grown by THM technique.

  4. Advanced Solid State Pixel Detectors for Future High Energy X-ray Missions

    NASA Astrophysics Data System (ADS)

    Harrison, Fiona

    We propose to advance the state of the art in solid state high energy X-ray pixel detectors for astrophysics. This program builds on advanced readout technology developed for suborbital and the NuSTAR space mission, and combines newly-developed CdTe PIN sensors and materials characterization techniques to achieve detectors broad band (1 - 200 keV), sub-keV energy resolution, and 300 micron spatial resolution. The low-noise readout technology will also be taken to the next generation with reduced pixel size, lower noise and significantly reduced dead time.

  5. Optimizing diode thickness for thin-film solid state thermal neutron detectors

    SciTech Connect

    Murphy, John W.; Mejia, Israel; Quevedo-Lopez, Manuel A.; Gnade, Bruce; Kunnen, George R.; Allee, David

    2012-10-01

    In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  6. MS Detectors

    SciTech Connect

    Koppenaal, David W.; Barinaga, Charles J.; Denton, M Bonner B.; Sperline, Roger P.; Hieftje, Gary M.; Schilling, G. D.; Andrade, Francisco J.; Barnes IV., James H.

    2005-11-01

    Good eyesight is often taken for granted, a situation that everyone appreciates once vision begins to fade with age. New eyeglasses or contact lenses are traditional ways to improve vision, but recent new technology, i.e. LASIK laser eye surgery, provides a new and exciting means for marked vision restoration and improvement. In mass spectrometry, detectors are the 'eyes' of the MS instrument. These 'eyes' have also been taken for granted. New detectors and new technologies are likewise needed to correct, improve, and extend ion detection and hence, our 'chemical vision'. The purpose of this report is to review and assess current MS detector technology and to provide a glimpse towards future detector technologies. It is hoped that the report will also serve to motivate interest, prompt ideas, and inspire new visions for ion detection research.

  7. Emitter/absorber interface of CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-06-01

    The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔEC ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interface defect density, much like with Cu(In,Ga)Se2 (CIGS) cells. The basic principle is that positive ΔEC, often referred to as a "spike," creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔEC ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a "cliff" (ΔEC < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔEC of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔEC. These materials are predicted to yield higher voltages and would therefore be

  8. Performance of a position-sensitive scintillation detector.

    PubMed

    Karp, J S; Muehllehner, G

    1985-07-01

    The spatial resolution of a NaI(T1), 25 mm thick bar detector designed for use in positron emission tomography has been studied. The position along the 500 mm long detector is determined from the centroid of the light distribution in the crystal as measured by a linear array of photomultiplier tubes. A Monte Carlo computer simulation was performed to investigate the factors limiting the spatial resolution. The program allowed us to study the effect of various phototube configurations and crystal surfaces. Since the resolution is affected by the width of the light distribution, we studied the effect of sharpening the distribution by modifying the front crystal surface with grooves cut perpendicular to the long axis of the crystal and by using non-linear preamplifiers. The simulation predicts a spatial resolution (FWHM) of 3 mm with this crystal. Experimental measurements of spatial resolution were performed concurrently with the simulations. In particular, a modified grooved crystal was measured to have 4.0 mm spatial resolution, an improvement over the original crystal without grooves. With delay line pulse shortening, which increases the count rate capability of the detector, the grooved crystal was measured to have 5.5 mm spatial resolution. PMID:3895256

  9. Temperature dependence measurements for Cadmium Telluride (CdTe) solar cells

    NASA Astrophysics Data System (ADS)

    Duarte, Fernanda; Wang, Weining

    2015-03-01

    Traditional silicon (Si)-based solar cells have been studied broadly and have already reached their maximum efficiency. However, their cost is relatively high, preventing them from being widely used. Unlike Si-based solar cells, Cadmium Telluride (CdTe) solar cells are considerably cheap, yet the record efficiency is still lower than that of traditional silicon-based solar cells. More studies are needed to understand and improve the efficiency of CdTe solar cells. In this work, we report our studies of the temperature dependence of CdTe solar cell parameters using the temperature-varying apparatus designed and built by us in-house. This temperature-varying apparatus will be incorporated with a solar cell testing station in order to measure the solar cell parameters while varying the temperature. The solar cell parameters will be measured at different temperatures (with a 100 K temperature range), and the effects of temperature on the open-circuit voltage, short-circuit current and efficiency of the solar cells will be reported. These results allow us to further understand the physics of CdTe solar cells and shine light on how to improve the efficiency of CdTe solar cells.

  10. Electronic Structure of Quantum Spin Hall Parent Compound CdTe

    NASA Astrophysics Data System (ADS)

    Bian, Guang

    2015-03-01

    Cadmium telluride, a compound widely used in devices, is a key base material for the experimental realization of the quantum spin Hall phase. The electronic structure of CdTe has been studied by various theoretical and experimental methods. However, high-resolution band mapping has been lacking to this date. The detailed low-energy electronic structure of CdTe is thus unavailable, but it is of fundamental importance for understanding the topological properties and trends of this type of materials. We report herein, for the first time, a systematic study of the electronic structure of CdTe by angle-resolved photoemission spectroscopy from well-ordered (110) surfaces. The results are compared with first-principles calculations to illustrate the topological distinction between CdTe and a closely related compound HgTe. In addition, topological phase transition from CdTe to HgTe upon alloying and the massless Dirac-Kane semimetal phase at the critical composition are illustrated by computations based on a mixed-pseudopotential simulation.

  11. Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Kitamoto, Shinji; Yamada, Akira; Konagai, Makoto

    2001-05-01

    The control of native defects in the CdTe thin film solar cells was investigated using a novel source for close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and the Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2% because of the extremely low shunt resistance. On the other hand, a conversion efficiency above 15% was obtained by using the Cd-rich source. Capacitance-voltage (C-V) characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed using the Cd-rich source.

  12. Quantitative determination of uric acid using CdTe nanoparticles as fluorescence probes.

    PubMed

    Jin, Dongri; Seo, Min-Ho; Huy, Bui The; Pham, Quoc-Thai; Conte, Maxwell L; Thangadurai, Daniel; Lee, Yong-Ill

    2016-03-15

    A convenient enzymatic optical method for uric acid detection was developed based on the fluorescence quenching of ligand-capped CdTe nanoparticles by H2O2 which was generated from the enzymatic reaction of uric acid. The interactions between the CdTe nanoparticles capped with different ligands (glutathione, 3-mercaptopropionic acid, and thioglycerol) and H2O2 were investigated. The fluorescence quenching studies of GSH-capped CdTe nanoparticles demonstrated an excellent sensitivity to H2O2. The effects of uric acid, uricase and H2O2 on the fluorescence intensity of CdTe nanoparticles were also explored. The detection conditions, reaction time, pH value, incubation period and the concentration of uricase and uric acid were optimized. The detection limit of uric acid was found to be 0.10 µM and the linear range was 0.22-6 µM under the optimized experimental conditions. These results typify that CdTe nanoparticles could be used as a fluorescent probe for uric acid detection. PMID:26433069

  13. Synthesis of CdTe thin films on flexible metal foil by electrodeposition

    NASA Astrophysics Data System (ADS)

    Luo, H.; Ma, L. G.; Xie, W. M.; Wei, Z. L.; Gao, K. G.; Zhang, F. M.; Wu, X. S.

    2016-04-01

    CdTe thin films have been deposited onto the Mo foil from aqueous acidic bath via electrodeposition method with water-soluble Na2TeO3 instead of the usually used TeO2. X-ray diffraction studies indicate that the CdTe thin films are crystallized in zinc-blende symmetry. The effect of tellurite concentration on the morphology of the deposited thin film is investigated. In such case, the Cd:Te molar ratios in the films are both stoichiometric at different tellurite concentrations. In addition, the reduction in tellurite concentration leads to the porous thin film and weakens the crystallinity of thin film. The island growth model is used to interpret the growth mechanism of CdTe. The bandgap of the CdTe thin films is assigned to be 1.49 eV from the UV-Vis spectroscopy measurement, which is considered to serve as a promising candidate for the heterojunction solar cells.

  14. A Simple Sb2Te3 Back-Contact Process for CdTe Solar Cells

    NASA Astrophysics Data System (ADS)

    Siepchen, B.; Späth, B.; Drost, C.; Krishnakumar, V.; Kraft, C.; Winkler, M.; König, J.; Bartholomé, K.; Peng, S.

    2015-10-01

    CdTe solar technology has proved to be a cost-efficient solution for energy production. Formation of the back contact is an important and critical step in preparing high-efficiency, stable CdTe solar cells. In this paper we report a simple CdTe solar cell (Sb2Te3) back contact-formation process. The CdS and CdTe layers were deposited by close-space sublimation. After CdCl2 annealing treatment, the CdTe surface was etched by use of a mixture of nitric and phosphoric acids to obtain a Te-rich surface. Elemental Sb was sputtered on the etched surface and successive post-annealing treatment induced Sb2Te3 alloy formation. Structural characterization by x-ray diffraction analysis confirmed formation of the Sb2Te3 phase. The performance of solar cells with nanoalloyed Sb2Te3 back contacts was comparable with that of reference solar cells prepared with sputtered Sb2Te3 back contact from a compound sputter target.

  15. Fabrication of an Absorber-Coupled MKID Detector

    NASA Technical Reports Server (NTRS)

    Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

    2012-01-01

    Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a

  16. Radiation damage effects in CZT drift strip detectors

    NASA Astrophysics Data System (ADS)

    Kuvvetli, Irfan; Budtz-Joergensen, Carl; Korsbech, Uffe; Jensen, H. J.

    2003-03-01

    At DSRI, in collaboration with the cyclotron facility at Copenhagen University Hospital, we have performed a study of radiation effects exposing a 2.7 mm thick CZT drift strip detector to 30 MeV protons. The detector characteristics were evaluated after exposure to a number of dose loads in the range from 2*108 to 60*108 p+/cm2. Even for the highest dose loads, which had a dramatic effect on the spectroscopic performance, we were able to recover the detectors after an appropriate annealing procedure. The radiation damage was studied as function of depth inside the detector material. A numerical model that emulates the physical processes of the charge transport in the CZT detector was used to derive the charge trapping parameter , μτe (the product of charge mobility and trapping time) as function of dose. The analysis showed that the electron trapping increased proportional with the proton dose. The radiation contribution to the electron trapping was found to obey the following relation: (μτe)-1rad =(2.5±0.2)*10-7*Φ (V/cm2) with the proton fluence, Φ in p+/cm2. The trapping depth dependence, however, did not agree well the damage profile calculated using the standard Monte Carlo simulations, TRIM for the proton induced radiation effects. The present results suggest that proton induced nuclear reactions contribute significantly to the radiation damage. Further work will elaborate on these effects. The detector energy resolution was investigated as function of proton dose. It was found that the observed degradation is well explained by the decrease of μτe when the fluctuations of the electron path length are taken into account. The proton irradiation produced In meta stable isotopes in the CZT material. Their decay and production yield as function of depth were analyzed.

  17. FOXSI: Properties of optics and detectors for hard-X rays

    NASA Astrophysics Data System (ADS)

    Camilo Buitrago-Casas, Juan; Glesener, Lindsay; Christe, Steven; Krucker, Sam; Ishikawa, Shin-nosuke; Foster, Natalie

    2015-04-01

    The Focusing Optics X-ray Solar Imager (FOXSI) is a state-of-the-art direct focusing X-ray telescope designed to observe the Sun. This experiment completed its second flight onboard a sounding rocket last December 11, 2014 from the White Sands Missile Range in New Mexico. The optics use a set of iridium-coated nickel/cobalt mirrors made using a replication technique based on an electroformed perfect polished surface. Since this technique creates full shells that no need to be co-aligned with other segments, an angular resolution of up to ~5 arcsec is gotten. The FOXSI focal plane consists of seven double-sided strip detectors. Five Silicon and 2 CdTe detectors were used during the second flight.We present on various properties of Wolter-I optics that are applicable to solar HXR observation, including ray-tracing simulations of the single-bounce (“ghost ray”) patterns from sources outside the field of view and angular resolution for different source angles and effective area measurements of the FOXSI optics. We also present the detectors calibration results, paying attention to energy resolution (~0.5 keV), energy thresholds (~4-15 keV for Silicon and ~4-20 keV for CdTe detectors), and spatial coherence of these values over the entire detector.

  18. Structural and AC conductivity study of CdTe nanomaterials

    NASA Astrophysics Data System (ADS)

    Das, Sayantani; Banerjee, Sourish; Sinha, T. P.

    2016-04-01

    Cadmium telluride (CdTe) nanomaterials have been synthesized by soft chemical route using mercapto ethanol as a capping agent. Crystallization temperature of the sample is investigated using differential scanning calorimeter. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to cubic structure with the average particle size of 20 nm. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 313 to 593 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The frequency dependence of real and imaginary parts of dielectric permittivity is analyzed using modified Cole-Cole equation. The temperature dependence relaxation time is found to obey the Arrhenius law having activation energy ~0.704 eV. The frequency dependent conductivity spectra are found to follow the power law. The frequency dependence ac conductivity is analyzed by power law.

  19. Recombination by grain-boundary type in CdTe

    SciTech Connect

    Moseley, John Ahrenkiel, Richard K.; Metzger, Wyatt K.; Moutinho, Helio R.; Guthrey, Harvey L.; Al-Jassim, Mowafak M.; Paudel, Naba; Yan, Yanfa

    2015-07-14

    We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB “type.” We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5–49), and general GBs (Σ > 49), which make up ∼47%–48%, ∼6%–8%, and ∼44%–47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%–18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl{sub 2}-treated films were studied. The CdCl{sub 2} treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl{sub 2} treatment.

  20. Defect-induced emission band in CdTe

    NASA Astrophysics Data System (ADS)

    Seto, S.; Tanaka, A.; Takeda, F.; Matsuura, K.

    1994-04-01

    We report on a distinct correlation between the 1.47 eV emission band and the dislocation density in bulk CdTe. The 1.47 eV band intensifies around the high-dislocation area (lineage structure) and at the position just on dislocation bundle. On the other hand, the 1.47 eV band was hardly observed in the low-dislocation area (etch pit density less than 2 × 10 5 cm -2) or at the position away from the dislocation bundle. Furthermore, the 1.47 eV band was intensified by γ-ray irradiation of 1.7 × 10 7 Gy, which produced a great number of Frenkel defects. It was shown that the 1.47 eV band is related not only to an extended defect such as a dislocation, but also to a point defect such as a Frenkel defect. These results suggest that the strain field induced in the vicinity of the defects is responsible for the recombination center of the 1.47 eV band.

  1. Recombination by grain-boundary type in CdTe

    NASA Astrophysics Data System (ADS)

    Moseley, John; Metzger, Wyatt K.; Moutinho, Helio R.; Paudel, Naba; Guthrey, Harvey L.; Yan, Yanfa; Ahrenkiel, Richard K.; Al-Jassim, Mowafak M.

    2015-07-01

    We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB "type." We examined misorientation-based GB types, including coincident site lattice (CSL) Σ = 3, other-CSL (Σ = 5-49), and general GBs (Σ > 49), which make up ˜47%-48%, ˜6%-8%, and ˜44%-47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ˜16%-18% of Σ = 3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl2-treated films were studied. The CdCl2 treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl2 treatment.

  2. Pyroelectric detectors

    NASA Technical Reports Server (NTRS)

    Haller, Eugene E.; Beeman, Jeffrey; Hansen, William L.; Hubbard, G. Scott; Mcmurray, Robert E., Jr.

    1990-01-01

    The multi-agency, long-term Global Change programs, and specifically NASA's Earth Observing system, will require some new and advanced photon detector technology which must be specifically tailored for long-term stability, broad spectral range, cooling constraints, and other parameters. Whereas MCT and GaAs alloy based photovoltaic detectors and detector arrays reach most impressive results to wavelengths as long as 12 microns when cooled to below 70 K, other materials, such as ferroelectrics and pyroelectrics, appear to offer special opportunities beyond 12 microns and above 70 K. These materials have found very broad use in a wide variety of room temperature applications. Little is known about these classes of materials at sub-room temperatures and no photon detector results have been reported. From the limited information available, researchers conclude that the room temperature values of D asterisk greater than or equal to 10(exp 9) cm Hz(exp 1/2)/W may be improved by one to two orders of magnitude upon cooling to temperatures around 70 K. Improvements of up to one order of magnitude appear feasible for temperatures achievable by passive cooling. The flat detector response over a wavelength range reaching from the visible to beyond 50 microns, which is an intrinsic advantage of bolometric devices, makes for easy calibration. The fact that these materials have been developed for reduced temperature applications makes ferro- and pyroelectric materials most attractive candidates for serious exploration.

  3. Development of GAGG depth-of-interaction (DOI) block detectors based on pulse shape analysis

    NASA Astrophysics Data System (ADS)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Yeol Yeom, Jung; Morishita, Yuki; Sato, Hiroki; Endo, Takanori; Usuki, Yoshiyuki; Kamada, Kei; Yoshikawa, Akira

    2014-12-01

    A depth-of-interaction (DOI) detector is required for developing a high resolution and high sensitivity PET system. Ce-doped Gd3Al2Ga3O12 (GAGG fast: GAGG-F) is a promising scintillator for PET applications with high light output, no natural radioisotope and suitable light emission wavelength for semiconductor based photodetectors. However, no DOI detector based on pulse shape analysis with GAGG-F has been developed to date, due to the lack of appropriate scintillators of pairing. Recently a new variation of this scintillator with different Al/Ga ratios-Ce-doped Gd3Al2.6Ga2.4O12 (GAGG slow: GAGG-S), which has slower decay time was developed. The combination of GAGG-F and GAGG-S may allow us to realize high resolution DOI detectors based on pulse shape analysis. We developed and tested two GAGG phoswich DOI block detectors comprised of pixelated GAGG-F and GAGG-S scintillation crystals. One phoswich block detector comprised of 2×2×5 mm pixel that were assembled into a 5×5 matrix. The DOI block was optically coupled to a silicon photomultiplier (Si-PM) array (Hamamatsu MPPC S11064-050P) with a 2-mm thick light guide. The other phoswich block detector comprised of 0.5×0.5×5 mm (GAGG-F) and 0.5×0.5×6 mm3 (GAGG-S) pixels that were assembled into a 20×20 matrix. The DOI block was also optically coupled to the same Si-PM array with a 2-mm thick light guide. In the block detector of 2-mm crystal pixels (5×5 matrix), the 2-dimensional histogram revealed excellent separation with an average energy resolution of 14.1% for 662-keV gamma photons. The pulse shape spectrum displayed good separation with a peak-to-valley ratio of 8.7. In the block detector that used 0.5-mm crystal pixels (20×20 matrix), the 2-dimensional histogram also showed good separation with energy resolution of 27.5% for the 662-keV gamma photons. The pulse shape spectrum displayed good separation with a peak-to-valley ratio of 6.5. These results indicate that phoswich DOI detectors with the two

  4. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    PubMed Central

    Campbell, DL; Peterson, TE

    2014-01-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140-keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a −5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time. PMID:25360792

  5. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    NASA Astrophysics Data System (ADS)

    Campbell, D. L.; Peterson, T. E.

    2014-11-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  6. Development of an array of cooled large area Si(Li) detectors

    SciTech Connect

    Pehl, R.H.; Madden, N.W.; Walton, J.T.; Malone, D.F.; Landis, D.A.; Goulding, F.S.; Cork, C.P.; Wong, Y.K.; Strauss, M.G.; Sherman, I.S.

    1985-10-01

    A system containing six cooled, 34 mm diam by 7 mm thick, high-resolution Si(Li) detectors designed to maximize the sensitivity for counting x rays in the 10-30 keV range to measure trace radionuclides in soil samples has been successfully fabricated. The detectors were mounted in a paddle-shaped cryostat with a single large beryllium window on each side. This configuration provides for efficient anticoincidence background suppression and effectively doubles the sensitive detector area because x rays can impinge on the detectors from both sides. To maximize detection efficiency, the thickness of the cryostat was held to a bare minimum (25 mm); this caused severe difficulties during fabrication of the system. Cutting down the rim of the detectors reduced to an acceptable level the microphony caused by movement of the beryllium window that faces the lithium-diffused contact of the detectors. Since this system will be used for low level counting. careful testing was performed to select materials having the lowest radioactivity.

  7. X-ray luminescence of CdTe quantum dots in LaF{sub 3}:Ce/CdTe nanocomposites

    SciTech Connect

    Hossu, Marius; Liu Zhongxin; Yao Mingzhen; Ma Lun; Chen Wei

    2012-01-02

    CdTe quantum dots have intense photoluminescence but exhibit almost no x-ray luminescence. However, intense x-ray luminescence from CdTe quantum dots is observed in LaF{sub 3}:Ce/CdTe nanocomposites. This enhancement in the x-ray luminescence of CdTe quantum dots is attributed to the energy transfer from LaF{sub 3}:Ce to CdTe quantum dots in the nanocomposites. The combination of LaF{sub 3}:Ce nanoparticles and CdTe quantum dots makes LaF{sub 3}:Ce/CdTe nanocomposites promising scintillators for radiation detection.

  8. Controlled optical properties of water-soluble CdTe nanocrystals via anion exchange.

    PubMed

    Li, Jing; Jia, Jianguang; Lin, Yuan; Zhou, Xiaowen

    2016-02-01

    We report a study on anion exchange reaction of CdTe nanocrystals with S(2-) in aqueous solution under ambient condition. We found that the optical properties of CdTe nanocrystals can be well tuned by controlling the reaction conditions, in which the reaction temperature is crucially important. At low reaction temperature, the product nanocrystals showed blue-shifts in both absorption and PL spectra, while the photoluminescence quantum yield (PLQY) was significantly enhanced. When anion exchanges were carried out at higher reaction temperature, on the other hand, obvious red shifts in absorption and PL spectra accompanied by a fast increase followed by gradual decrease in PLQY were observed. On variation of S(2-) concentration, it was found that the overall kinetics of Te(2-) for S(2-) exchanges depends also on [S(2-)] when anion exchanges were performed at higher temperature. A possible mechanism for anion exchanges in CdTe NCs was proposed. PMID:26520812

  9. Role of polycrystallinity in CdTe and CuInSe sub 2 photovoltaic cells

    SciTech Connect

    Sites, J.R. )

    1991-01-01

    The polycrystalline nature of thin-film CdTe and CuInSe{sub 2} solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe{sub 2} cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm{sup 2}; those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe{sub 2} cells from International Solar Electric Technology have shown a hole density as high as 7 {times} 10{sup 16} cm{sup {minus}3}, implying a significant reduction in compensation. 9 refs.

  10. Advances in the In-House CdTe Research Activities at NREL

    SciTech Connect

    Gessert, T.; Wu, X.; Dhere, R.; Moutinho, H.; Smith, S.; Romero, M.; Zhou, J.; Duda, A.; Corwine, C.

    2005-01-01

    NREL in-house CdTe research activities have impacted a broad range of recent program priorities. Studies aimed at industrially relevant applications have produced new materials and processes that enhance the performance of devices based on commercial materials (e.g., soda-lime glass, SnO2:F). Preliminary tests of the effectiveness of these novel components using large-scale processes have been encouraging. Similarly, electro- and nano-probe techniques have been developed and used to study the evolution and function of CdTe grain boundaries. Finally, cathodoluminescence (CL) and photoluminescence (PL) studies on single-crystal samples have yielded improved understanding of how various processes may combine to produce important defects in CdTe films.

  11. Far-infrared spectroscopy of CdTe1-xSex(In): Phonon properties

    NASA Astrophysics Data System (ADS)

    Petrović, M.; Romčević, N.; Trajić, J.; Dobrowolski, W. D.; Romčević, M.; Hadžić, B.; Gilić, M.; Mycielski, A.

    2014-11-01

    The far-infrared reflectivity spectra of CdTe0.97Se0.03 and CdTe0.97Se0.03(In) single crystals were measured at different temperatures. The analysis of the far-infrared spectra was carried out by a fitting procedure based on the dielectric function which includes spatial distribution of free carriers as well as their influence on the plasmon-phonon interaction. We found that the long wavelength optical phonon modes of CdTe1-xSex mixed crystals exhibit a two-mode behavior. The local In mode at about 160 cm-1 is observed. In both sample, a surface layer with a low concentration of free carriers (depleted region) are formed.

  12. Synthesis of positively charged CdTe quantum dots and detection for uric acid

    NASA Astrophysics Data System (ADS)

    Zhang, Tiliang; Sun, Xiangying; Liu, Bin

    2011-09-01

    The CdTe dots (QDs) coated with 2-Mercaptoethylamine was prepared in aqueous solution and characterized with fluorescence spectroscopy, UV-Vis absorption spectra, high-resolution transmission electron microscopy and infrared spectroscopy. When the λex = 350 nm, the fluorescence peak of positively charged CdTe quantum dots is at 592 nm. The uric acid is able to quench their fluorescence. Under optimum conditions, the change of fluorescence intensity is linearly proportional to the concentration of uric acid in the range 0.4000-3.600 μmol L -1, and the limit of detection calculated according to IUPAC definitions is 0.1030 μmol L -1. Compared with routine method, the present method determines uric acid in human serum with satisfactory results. The mechanism of this strategy is due to the interaction of the tautomeric keto/hydroxyl group of uric acid and the amino group coated at the CdTe QDs.

  13. Role of polycrystallinity in CdTe and CuInSe2 photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Sites, J. R.

    The polycrystalline nature of thin-film CdTe and CuInSe2 solar cells continues to be a major factor in several individual losses that limit overall cell efficiency. This report describes progress in the quantitative separation of these losses, including both measurement and analysis procedures. It also applies these techniques to several individual cells to help document the overall progress with CdTe and CuInSe2 cells. Notably, CdTe cells from Photon Energy have reduced window photocurrent losses to 1 mA/Cm(exp 2); those from the University of South Florida have achieved a maximum power voltage of 693 mV; and CuInSe2 cells from International Solar Electric Technology have shown a hole density as high as 7 x 10(exp 16) cm(exp -3), implying a significant reduction in compensation.

  14. High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies

    NASA Astrophysics Data System (ADS)

    Lindström, A.; Mirbt, S.; Sanyal, B.; Klintenberg, M.

    2016-01-01

    In this paper, we focus on the high resistivity of intentionally undoped CdTe, where the most prevalent defects are Cd vacancies and Te antisites. Our calculated formation energies lead to the conclusion that the Fermi energy of undoped CdTe is at midgap due to carrier compensation of Te antisites and Cd vacancies, which explains the experimentally observed high resistivity. We use density functional theory with the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE06) and show that the proper description of the native defects in general fails using the local density approximation (LDA) instead of HSE06. We conclude that LDA is insufficient to understand the high resistivity of undoped CdTe. We calculate the neutral and double acceptor state of the Te antisite to be intrinsic DX-centers.

  15. Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

    NASA Astrophysics Data System (ADS)

    Wijewarnasuriya, Priyalal S.

    2016-05-01

    Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

  16. A novel silica-coated multiwall carbon nanotube with CdTe quantum dots nanocomposite

    NASA Astrophysics Data System (ADS)

    Fei, Qiang; Xiao, Dehai; Zhang, Zhiquan; Huan, Yanfu; Feng, Guodong

    2009-10-01

    A novel silica-coated multiwall carbon nanotube (MWNTs) with CdTe quantum dots nanocomposite was synthesized in this paper. Here, we show the in situ growth of crystalline CdTe quantum dots on the surfaces of oxidized MWNTs. The approach proposed herein differs from previous attempts to synthesize nanotube assemblies in that we mix the oxidized MWNTs into CdCl 2 solution of CdTe nanocrystals synthesized in aqueous solution. Reinforced the QD-MWNTs heterostructures with silica coating, this method is not invasive and does not introduce defects to the structure of carbon nanotubes (CNTs), and it ensures high stability in a range of organic solvents. Furthermore, a narrow SiO 2 layer on the MWNT-CdTe heterostructures can eliminate the biological toxicity of quantum dots and carbon nanotubes. This is not only a breakthrough in the synthesis of one-dimensional nanostructures, but also taking new elements into bio-nanotechnology.

  17. Bismuth-induced deep levels and carrier compensation in CdTe

    SciTech Connect

    Du, Mao-Hua

    2008-01-01

    First-principles calculations show that Bi on Cd site in CdTe can be either a donor, Bi_Cd+, or an acceptor, Bi_Cd- , depending on the Fermi level. The can bind a substitutional O (O_Te) with large binding energy of 1.40 eV. The calculated (0/-) transition level for B_Cd- - O_Te complex is in good agreement with the observed deep hole trapping level. Bi can also substitute Te to form an acceptor. The amphoteric nature of Bi in CdTe results in the pinning of the Fermi level and the high resistivity. We also discuss the origin of p-type CdTe at high Bi doping level.

  18. PHASE DETECTOR

    DOEpatents

    Kippenhan, D.O.

    1959-09-01

    A phase detector circuit is described for use at very high frequencies of the order of 50 megacycles. The detector circuit includes a pair of rectifiers inverted relative to each other. One voltage to be compared is applied to the two rectifiers in phase opposition and the other voltage to be compared is commonly applied to the two rectifiers. The two result:ng d-c voltages derived from the rectifiers are combined in phase opposition to produce a single d-c voltage having amplitude and polarity characteristics dependent upon the phase relation between the signals to be compared. Principal novelty resides in the employment of a half-wave transmission line to derive the phase opposing signals from the first voltage to be compared for application to the two rectifiers in place of the transformer commonly utilized for such purpose in phase detector circuits for operation at lower frequency.

  19. MAMA Detector

    NASA Technical Reports Server (NTRS)

    Bowyer, Stuart

    1998-01-01

    Work carried out under this grant led to fundamental discoveries and over one hundred publications in the scientific literature. Fundamental developments in instrumentation were made including all the instrumentation on the EUVE satellite, the invention of a whole new type of grazing instrument spectrometer and the development of fundamentally new photon counting detectors including the Wedge and Strip used on EUVE and many other missions and the Time Delay detector used on OREFUS and FUSE. The Wedge and Strip and Time Delay detectors were developed under this grant for less than two million dollars and have been used in numerous missions most recently for the FUSE mission. In addition, a fundamentally new type of diffuse spectrometer has been developed under this grant which has been used in instrumentation on the MMSAT spacecraft and the Lewis spacecraft. Plans are underway to use this instrumentation on several other missions as well.

  20. Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

    NASA Astrophysics Data System (ADS)

    Colegrove, Eric; Harvey, Steven P.; Yang, Ji-Hui; Burst, James M.; Albin, David S.; Wei, Su-Huai; Metzger, Wyatt K.

    2016-05-01

    A key challenge in cadmium-telluride (CdTe) semiconductors is obtaining stable and high hole density. Group-I elements substituting Cd can form acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but this creates stability problems and hole density that has not exceeded 1015 cm-3 . If hole density can be increased beyond 1016 cm-3 , CdTe solar technology can exceed multicrystalline silicon performance and provide levelized costs of electricity below conventional energy sources. Group-V elements substituting Te offer a solution, but they are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain-boundary diffusion of phosphorus (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast grain-boundary diffusion, there is a critical fast bulk-diffusion component that enables deep P incorporation in CdTe. Detailed first-principle calculations indicate the slow bulk-diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk-diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, these results open up experimental possibilities for group-V doping in CdTe applications.

  1. Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

    SciTech Connect

    Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D.; Gessert, T. A.

    2012-08-01

    Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (Voc) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuxTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with Voc values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.

  2. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  3. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    SciTech Connect

    Yuan, Zhimin; Yang, Ping

    2013-07-15

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling.

  4. Methods to extract more light from minute scintillation crystals used in an ultra-high resolution positron emission tomography detector

    NASA Astrophysics Data System (ADS)

    Levin, Craig S.; Habte, Frezghi; Foudray, Angela M.

    2004-07-01

    Recently, there has been great interest in developing finely pixellated position-sensitive scintillation detectors for ultra-high-resolution Positron Emission Tomography (PET) systems designed for breast cancer detection, diagnosis, and staging and for imaging small laboratory animals. We are developing a different high-resolution PET detector design that promotes nearly complete scintillation light collection in ⩽1 mm wide, >10 mm thick lutetium oxyorthosilicate (LSO) crystals. The design requires the use of semiconductor photodetector arrays in novel configurations that significantly improve the light collection aspect ratio for minute crystals. To reduce design complexity and dead area we are investigating the use of 1 mm thick sheets of LSO in addition to discrete crystal rods, and the use of position-sensitive avalanche photodiodes (PSAPDs) which require only four readout channels per device, in addition to pixellated APD arrays. Using a 1 mm thick scintillation crystal sheet coupled to a finely pixellated APD array results in a pseudo-discrete response to flood irradiation: due to a very narrow light spread function in the thin sheet we observe sharp (<1 mm wide) peaks in sensitivity centered at the APD pixel locations in a very linear fashion all the way out to the crystal edge. We measured an energy resolution of 13.7% FWHM at 511 keV for a 1 mm LSO crystal coupled to two APD pixels. Using a 1 mm thick crystal sheet coupled to a PSAPD the response to flood and edge-on irradiation with a 22Na point source shows a compressed dynamic range compared to that observed with discrete crystals or direct X-ray irradiation. With a discrete LSO crystal array the flood response is peaked at the crystal location where light is focused onto one spot on the PSAPD. We observed strong pin-cushioning effects in all PSAPD measurements. All LSO-PSAPD configurations studied had high aspect ratio for light collection and achieved energy resolutions ⩽12% FWHM at 511 keV.

  5. Hydrogen detector

    DOEpatents

    Kanegae, Naomichi; Ikemoto, Ichiro

    1980-01-01

    A hydrogen detector of the type in which the interior of the detector is partitioned by a metal membrane into a fluid section and a vacuum section. Two units of the metal membrane are provided and vacuum pipes are provided independently in connection to the respective units of the metal membrane. One of the vacuum pipes is connected to a vacuum gauge for static equilibrium operation while the other vacuum pipe is connected to an ion pump or a set of an ion pump and a vacuum gauge both designed for dynamic equilibrium operation.

  6. Microwave detector

    DOEpatents

    Meldner, Heiner W.; Cusson, Ronald Y.; Johnson, Ray M.

    1986-01-01

    A microwave detector (10) is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite (26, 28) produces a magnetization field flux that links a B-dot loop (16, 20). The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means (18, 22) are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  7. Microwave detector

    DOEpatents

    Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

    1985-02-08

    A microwave detector is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite produces a magnetization field flux that links a B-dot loop. The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  8. Monte Carlo Simulations of Background Spectra in Integral Imager Detectors

    NASA Technical Reports Server (NTRS)

    Armstrong, T. W.; Colborn, B. L.; Dietz, K. L.; Ramsey, B. D.; Weisskopf, M. C.

    1998-01-01

    Predictions of the expected gamma-ray backgrounds in the ISGRI (CdTe) and PiCsIT (Csl) detectors on INTEGRAL due to cosmic-ray interactions and the diffuse gamma-ray background have been made using a coupled set of Monte Carlo radiation transport codes (HETC, FLUKA, EGS4, and MORSE) and a detailed, 3-D mass model of the spacecraft and detector assemblies. The simulations include both the prompt background component from induced hadronic and electromagnetic cascades and the delayed component due to emissions from induced radioactivity. Background spectra have been obtained with and without the use of active (BGO) shielding and charged particle rejection to evaluate the effectiveness of anticoincidence counting on background rejection.

  9. Chapter 1.19: Cadmium Telluride Photovoltaic Thin Film: CdTe

    SciTech Connect

    Gessert, T. A.

    2012-01-01

    The chapter reviews the history, development, and present processes used to fabricate thin-film, CdTe-based photovoltaic (PV) devices. It is intended for readers who are generally familiar with the operation and material aspects of PV devices but desire a deeper understanding of the process sequences used in CdTe PV technology. The discussion identifies why certain processes may have commercial production advantages and how the various process steps can interact with each other to affect device performance and reliability. The chapter concludes with a discussion of considerations of large-area CdTe PV deployment including issues related to material availability and energy-payback time.

  10. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    SciTech Connect

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L.; Mayo, B.

    1998-10-29

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  11. Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

    SciTech Connect

    Moutinho, H. R.; Dhere, R. G.; Al-Jassim, M. M.; Levi, D. H.; Kazmerski, L. L.; Mayo, B.

    1998-10-26

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350 C and completely recrystallized after the same treatment at 400 C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures.

  12. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics.

    PubMed

    Mendis, B G; Gachet, D; Major, J D; Durose, K

    2015-11-20

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps) within the grains and are rapidly quenched at the grain boundary. However, a ~47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature. PMID:26636877

  13. Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

    NASA Astrophysics Data System (ADS)

    Mendis, B. G.; Gachet, D.; Major, J. D.; Durose, K.

    2015-11-01

    A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps ) within the grains and are rapidly quenched at the grain boundary. However, a ˜47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

  14. Synthesis of CdTe QDs by hydrothermal method, with tunable emission fluorescence

    NASA Astrophysics Data System (ADS)

    Liu, Fujun; Laurent, Sophie; Vander Elst, Luce; Muller, Robert N.

    2015-09-01

    Cadmium telluride (CdTe) quantum dots (QDs) were prepared via a hydrothermal method, using 3-mercaptopropionic acid (3-MPA) as the stabilizing agent. With the help of absorption and emission spectra, it was found that prolonging the reaction time and raising the reaction temperature can increase the size of the QDs obtained, and hence induce a red shift of fluorescence emission. Rhodamine 6G was used as the reference to calculate the quantum yield (QY), and this showed that the use of extra Cd ions will distinctly increase the QY of CdTe.

  15. Characterizing Recombination in CdTe Solar Cells with Time-Resolved Photoluminescence: Preprint

    SciTech Connect

    Metzger, W. K.; Romero, M. J.; Dippo, P.; Young, M.

    2006-05-01

    Time-resolved photoluminescence (TRPL) computer simulations demonstrate that under certain experimental conditions it is possible to assess recombination in CdTe solar cells in spite of the junction. This is supported by experimental findings that open-circuit voltage (Voc) is dependent on lifetime in a manner consistent with device theory. Measurements on inverted structures show that the CdCl2 treatment significantly reduces recombination in the CdTe layer without S diffusion. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. The results indicate that substrate solar cells can be fabricated with recombination lifetimes similar to superstrate cells.

  16. Determination of dispersion parameters of thermally deposited CdTe thin film

    NASA Astrophysics Data System (ADS)

    Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

    2016-05-01

    Cadmium Telluride (CdTe) thin film was deposited onto glass substrates under a vacuum of 5 × 10-6 torr by using thermal evaporation technique. The prepared film was characterized for dispersion analysis from reflectance spectra within the wavelength range of 300 nm - 1100 nm which was recorded by using UV-Visible spectrophotometer. The dispersion parameters (oscillator strength, oscillator wavelength, high frequency dielectric constant, long wavelength refractive index, lattice dielectric constant and plasma resonance frequency) of CdTe thin film were investigated using single sellimeir oscillator model.

  17. Experimental ground-based Bridgman CdTe growth in NASA's advanced automated directional solidification furnace

    NASA Technical Reports Server (NTRS)

    Bostrup, G.; Viola, J.; Gertner, E.; Aldrich, W.

    1988-01-01

    The role of gravity-induced phenomena in bulk CdTe crystal growth is studied with emphasis placed on the negative effects of buoyancy-driven convection, container effects, and hydrostatic pressure. An earth-bound crystal growth data base utilizing NASA's prototype advanced automated directional solidification furnace is described. Growth procedures that can be employed in a microgravity environment aboard the Space Shuttle or Space Station are presented. It is found that NASA's directional solidification furnace can produce Bridgman-type CdTe and has the potential for producing it in space.

  18. Characterization of point defects in CdTe by positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Elsharkawy, M. R. M.; Kanda, G. S.; Abdel-Hady, E. E.; Keeble, D. J.

    2016-06-01

    Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

  19. Vertex detectors

    SciTech Connect

    Lueth, V.

    1992-07-01

    The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10{sup {minus}13} s, among them the {tau} lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation.

  20. CZT detectors used in different irradiation geometries: Simulations and experimental results

    SciTech Connect

    Fritz, Shannon G.; Shikhaliev, Polad M.

    2009-04-15

    The purpose of this work was to evaluate potential advantages and limitations of CZT detectors used in surface-on, edge-on, and tilted angle irradiation geometries. Simulations and experimental investigations of the energy spectrum measured by a CZT detector have been performed using different irradiation geometries of the CZT. Experiments were performed using a CZT detector with 10x10 mm{sup 2} size and 3 mm thickness. The detector was irradiated with collimated photon beams from Am-241 (59.5 keV) and Co-57 (122 keV). The edge-scan method was used to measure the detector response function in edge-on illumination mode. The tilted angle mode was investigated with the radiation beam directed to the detector surface at angles of 90 degree sign , 15 degree sign , and 10 degree sign . The Hecht formalism was used to simulate theoretical energy spectra. The parameters used for simulations were matched to experiment to compare experimental and theoretical results. The tilted angle CZT detector suppressed the tailing of the spectrum and provided an increase in peak-to-total ratio from 38% at 90 degree sign to 83% at 10 degree sign tilt angle for 122 keV radiation. The corresponding increase for 59 keV radiation was from 60% at 90 degree sign to 85% at 10 degree sign tilt angle. The edge-on CZT detector provided high energy resolution when the beam thickness was much smaller than the thickness of CZT. The FWHM resolution in edge-on illumination mode was 4.2% for 122 keV beam with 0.3 mm thickness, and rapidly deteriorated when the thickness of the beam was increased. The energy resolution of surface-on geometry suffered from strong tailing effect at photon energies higher than 60 keV. It is concluded that tilted angle CZT provides high energy resolution but it is limited to a 1D linear array configuration. The surface-on CZT provides 2D pixel arrays but suffers from tailing effect and charge build up. The edge-on CZT is considered suboptimal as it requires small beam

  1. Position-Sensitive CZT Detectors for High Energy X-Ray Astronomy

    NASA Astrophysics Data System (ADS)

    Matteson, J.; Coburn, W.; Heindl, W.; Peterson, L.; Pelling, M.; Rothschild, R.; Skelton, R.; Hink, P.; Slavis, K.

    1998-05-01

    We report recent progress on CZT (Cadmium Zinc Telluride) detectors by the UCSD/WU collaboration. CZT, a room- temperature semiconductor, is a very promising detector material for high energy X-ray astronomy. It can operate from <10 keV to >200 keV, and give sub-keV energy resolution and sub-mm spatial resolution. We have developed an advanced CZT detector that uses two innovations to improve spectral response, give it 3-D localization of energy loss events, and reduce background at high altitudes and in space. The detector measures 12 x 12 x 2 mm(3) and was manufactured by eV Products. Each face has a strip readouts with 500 micron pitch electrodes. The 2 faces' strips are orthogonal, which provides x-y localization into 500 micron pixels. One innovation is "steering electrodes", which are located between the anode strips. They improve the anode charge collection and energy resolution, and tailing due to hole trapping is nearly totally eliminated. The energy resolution at 60 keV is 4 keV and the peak to valley ratio is 50. The other innovation is 3-D localization of energy losses. This is done by comparing the signals from the anode strips, cathode strips, and steering electrodes. There is a strong depth of interaction signature, which can be used to accept events which interact close to the cathode strips (where X-rays of interest are incident) and reject deeper interactions (which are likely to be background). The detector was tested in a balloon flight at 108,000 feet in October 1997. Background was reduced by passive shielding, consisting of lead graded with tin and copper. The lead thickness was changed by command during the flight, and was 7, 2, and 0 mm thick. With the 2 mm thickness the 20 - 40 keV background for the central 30 pixels was 8x10(-4) c/cm(2) -s-keV when the depth of interaction signature was used to reject background, and 7 times greater when this information was not used. The lower background is 12 times less than other workers have obtained

  2. The high-energy detector of the New Hard X-ray Mission (NHXM): design concept

    NASA Astrophysics Data System (ADS)

    Bellazzini, R.; Brez, A.; Minuti, M.; Pinchera, M.; Spandre, G.; Argan, A.; Catalano, O.; Costa, E.; Fiorini, C.; Malaguti, G.; Pareschi, G.; Tagliaferri, G.; Uslenghi, M.

    2010-07-01

    The New Hard X-ray Mission (NHXM) is conceived to extend the grazing-angle reflection imaging capability up to 80 keV energy. The payload of the mission consists of four telescopes: three of the them having at their focal plane an identical spectral-imaging camera operating between 0.2 and 80 keV, while the fourth one is equipped with a X-ray imaging polarimeter. The three cameras consist of two detection layers: a Low Energy Detector (LED) and a High Energy Detector (HED) surrounded by an Anti Coincidence (AC) system. Here we present the preliminary design and the solutions that we are currently studying to meet the requirements for the high energy detectors. These detectors will be based on Cadmium Telluride (CdTe) pixel sensors coupled to pixel read-out electronics using custom CMOS ASICs.

  3. New Possibilities in Medical X-Ray Imaging with Photon Counting Pixel Detectors

    NASA Astrophysics Data System (ADS)

    Durst, J.; Bartl, P.; Guni, E.; Haas, W.; Ritter, A.; Takoukam Talla, P.; Weber, T.; Michel, T.; Anton, G.

    2010-04-01

    The new generation of X-ray photon counting pixel detectors like the Medipix2 and the Medipix3 opens a new field of applications in medical X-ray imaging. These detectors work with one or more energy windows, which makes energy information available in addition to the intensity. A detailled understanding of the detector response of such detectors is important. Results will be presented for Si and CdTe as sensor material. With this knowledge two methods called spectrum reconstruction and material reconstruction can be applied to energy resolved images in absorption radiography and computed tomography. Another new application is the measurement of the phase information in computed tomography in addition to the absorption information. The potential of phase contrast imaging will be discussed.

  4. The influence of electron track lengths on the γ-ray response of compound semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Nakhostin, M.; Esmaili-Torshabi, A.

    2015-10-01

    The charge-trapping effect in compound semiconductor γ-ray detectors in the presence of a uniform electric field is commonly described by Hecht's relation. However, Hecht's relation ignores the geometrical spread of charge carriers caused by the finite range of primary and secondary electrons (δ-rays) in the detector. In this paper, a method based on the Shockley-Ramo theorem is developed to calculate γ-ray induced charge pulses by taking into account the charge-trapping effect associated with the geometrical spread of charge carriers. The method is then used to calculate the response of a planar CdTe detector to energetic γ-rays by which the influence of electron track lengths on the γ-ray response of the detectors is clearly shown.

  5. Structural, optical and photovoltaic properties of co-doped CdTe QDs for quantum dots sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Ayyaswamy, Arivarasan; Ganapathy, Sasikala; Alsalme, Ali; Alghamdi, Abdulaziz; Ramasamy, Jayavel

    2015-12-01

    Zinc and sulfur alloyed CdTe quantum dots (QDs) sensitized TiO2 photoelectrodes have been fabricated for quantum dots sensitized solar cells. Alloyed CdTe QDs were prepared in aqueous phase using mercaptosuccinic acid (MSA) as a capping agent. The influence of co-doping on the structural property of CdTe QDs was studied by XRD analysis. The enhanced optical absorption of alloyed CdTe QDs was studied using UV-vis absorption and fluorescence emission spectra. The capping of MSA molecules over CdTe QDs was confirmed by the FTIR and XPS analyses. Thermogravimetric analysis confirms that the prepared QDs were thermally stable up to 600 °C. The photovoltaic performance of alloyed CdTe QDs sensitized TiO2 photoelectrodes were studied using J-V characteristics under the illumination of light with 1 Sun intensity. These results show the highest photo conversion efficiency of η = 1.21%-5% Zn & S alloyed CdTe QDs.

  6. Optical and electrical characterizations of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation

    NASA Astrophysics Data System (ADS)

    Okamoto, T.; Yamada, A.; Konagai, M.

    2000-06-01

    The effects of the Cu diffusion on the optical and electrical properties of CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage ( C- V) measurement and low-temperature photoluminescence (PL) measurement. C- V measurement revealed that the net acceptor concentration in the CdTe layer was independent of the heat treatment after screen printing of the Cu-doped graphite electrode for Cu diffusion into the CdTe layer, although it greatly affected the solar cell performance. Furthermore, the depth profile of PL spectrum of CdTe layer implies that the heat treatment for Cu diffusion facilitates the formation of low-resistance contact to CdTe through the formation of a heavily doped (p +) region in the CdTe adjacent to the back electrode, but Cu atoms do not act as effective acceptors in the CdTe layer except the region near the back electrode.

  7. MBE-Grown CdTe Layers on GaAs with In-assisted Thermal Deoxidation

    NASA Astrophysics Data System (ADS)

    Arı, Ozan; Bilgilisoy, Elif; Ozceri, Elif; Selamet, Yusuf

    2016-03-01

    Molecular beam epitaxy (MBE) growth of thin (˜2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm-2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.

  8. Prospects of Thickness Reduction of the CdTe Layer in Highly Efficient CdTe Solar Cells Towards 1 µm

    NASA Astrophysics Data System (ADS)

    Amin, Nowshad; Isaka, Takayuki; Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    1999-08-01

    This study focuses on the technique for the stable growth of CdTe (1.44 eV) with thickness near its absorption length, 1 µm, by close spaced sublimation (hereafter CSS) process, in order to achieve high conversion efficiency. X-ray diffraction (XRD) spectroscopy was carried out to examine the microstructure of the films. Current-voltage (I V) characteristics, spectral response and other features of the solar cells using these CdTe films were investigated to elucidate the optimum conditions for achieving the best performance in such thin (1 µm) CdTe solar cells. Thickness was found to be reduced by controlling the temperature profile used during CSS growth. The temperature profile was found to be an important factor in growing high-quality thin films. By controlling the growth parameters and optimizing the annealing temperature at different fabrication steps, we have succeeded, to date, in achieving cell efficiencies of 14.3% (open-circuit voltage (Voc): 0.82 V, short-circuit current (Jsc): 25.2 mA/cm2, fill factor (F.F.): 0.695, area: 1 cm2) with 5 µm, 11.4% (Voc: 0.77 V, Jsc: 23.7 mA/cm2, F.F.: 0.63, area: 1 cm2) with 1.5 µm and 11.2% (Voc: 0.77 V, Jsc: 23.1 mA/cm2, F.F.: 0.63, area: 1 cm2) with only 1 µm of CdTe layer thickness at an air mass of 1.5 without antireflection coatings. This is important for establishing a strong foundation before developing a new structure (e.g., glass/ITO/CdS/CdTe/ZnTe/Ag configuration) with a back surface field of wide-bandgap material (e.g., ZnTe).

  9. Characterization of a hybrid energy-resolving photon-counting detector

    NASA Astrophysics Data System (ADS)

    Zang, A.; Pelzer, G.; Anton, G.; Ballabriga Sune, R.; Bisello, F.; Campbell, M.; Fauler, A.; Fiederle, M.; Llopart Cudie, X.; Ritter, I.; Tennert, F.; Wölfel, S.; Wong, W. S.; Michel, T.

    2014-03-01

    Photon-counting detectors in medical x-ray imaging provide a higher dose efficiency than integrating detectors. Even further possibilities for imaging applications arise, if the energy of each photon counted is measured, as for example K-edge-imaging or optimizing image quality by applying energy weighting factors. In this contribution, we show results of the characterization of the Dosepix detector. This hybrid photon- counting pixel detector allows energy resolved measurements with a novel concept of energy binning included in the pixel electronics. Based on ideas of the Medipix detector family, it provides three different modes of operation: An integration mode, a photon-counting mode, and an energy-binning mode. In energy-binning mode, it is possible to set 16 energy thresholds in each pixel individually to derive a binned energy spectrum in every pixel in one acquisition. The hybrid setup allows using different sensor materials. For the measurements 300 μm Si and 1 mm CdTe were used. The detector matrix consists of 16 x 16 square pixels for CdTe (16 x 12 for Si) with a pixel pitch of 220 μm. The Dosepix was originally intended for applications in the field of radiation measurement. Therefore it is not optimized towards medical imaging. The detector concept itself still promises potential as an imaging detector. We present spectra measured in one single pixel as well as in the whole pixel matrix in energy-binning mode with a conventional x-ray tube. In addition, results concerning the count rate linearity for the different sensor materials are shown as well as measurements regarding energy resolution.

  10. Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

    NASA Astrophysics Data System (ADS)

    Onodera, T.; Hitomi, K.; Shoji, T.; Hiratate, Y.

    2004-06-01

    Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI 2. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm 3). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI 2. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3×3 pixellated anodes (0.57×0.57 mm 2 each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with 241Am (59.5 keV), 57Co (122 keV) and 137Cs (662 keV) gamma-ray sources at temperature of -20°C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

  11. Performance characteristics of thermal neutron detectors based on Li6Y(BO3)3:Ce single crystals

    NASA Astrophysics Data System (ADS)

    Singh, A. K.; Tyagi, M.; Singh, S. G.; Tiwari, B.; Desai, D. G.; Sen, S.; Desai, S. S.; Ghodke, S. S.; Gadkari, S. C.

    2015-12-01

    Crack-free single crystals of Ce doped Li6Y(BO3)3 (LYBO:Ce) have been grown using the Czochralski technique. Grown crystals were characterized for their optical and scintillation characteristics to explore their potential as neutron detectors. Scintillator detectors based on LYBO:Ce crystal were used successfully to record the pulse height spectra from various neutron sources in the flux range from 10 n/cm2/s to 107 n/cm2/s. The detection efficiency for thermal neutrons was found to be over 80% for a 2 mm thick LYBO:Ce crystal. The scintillation decay times measured for neutron and gamma radiations were about 27 ns and 49 ns, respectively.

  12. Spectroscopic properties of large-volume virtual Frisch-grid CdMnTe detectors

    NASA Astrophysics Data System (ADS)

    Kim, K. H.; Park, Chansun; Kim, Pilsu; Cho, Shinhaeng; Lee, Jinseo; Hong, T. K.; Hossain, A.; Bolotnikov, A. E.; James, R. B.

    2015-06-01

    CdMnTe(CMT) is a promising alternative material for use as a room-temperature radiation detector. Frisch-grid detectors have a simple configuration and outstanding spectral performance compared with other single-carrier collection techniques. The energy resolution of large-volume virtual Frisch-grid CMT detectors was tested by using several isotopes such as 57Co, 22 Na, 133Ba, and 137Cs together or separately. Energy resolutions of 6.7% and 2.1% were obtained for 122-keV 57Co and 662-keV 137Cs gamma rays, respectively, without using any additional signal processing techniques. Also, a 12-mm-thick CMT detector detected the 511-keV and 1.277-MeV gamma peaks of 22Na with values of the full width at half maximum (FWHM) of 2.7% and 1.5%, respectively. In addition, multiple low- and high-energy gamma peaks of 133Ba were well separated. The mobilitylifetime product calculated from the shift of the 662-keV photo-peak vs. bias by using Hecht's equation was 7 × 10 -3 cm2/V. These results show the possibility of using CMT detectors in response to various requirements for gamma-ray detection at room-temperature.

  13. Development of an encapsulated scintillating fiber detector as a 14-MeV neutron sensor

    NASA Astrophysics Data System (ADS)

    Singkarat, S.; Boonyawan, D.; Hoyes, G. G.; Tippawan, U.; Vilaithong, T.; Garis, N. S.; Kobus, H.

    1997-02-01

    A scintillating fiber detector has been developed and tested for use as a 14-MeV neutron sensor. The detector, designated an "Encapsulated Scintillating Fiber Detector (EFD)", is composed of a parallel array of 0.5 × 0.5 × 15 mm BCF-12 plastic scintillating fibers encapsulated in clear BC-600 optical cement. The 85 fibers from a 12 × 12 mm square array, with a separation gap of 0.8-1 mm, in the center of the 40 mm diameter × 15 mm thick hardened optical cement. It can be directly coupled to an ordinary 2 in. diameter photomultiplier tube and its simple electronics. The response of the detector to gamma-rays from isotopic sources, as well as to 2.6- and 14-MeV monoenergetic neutrons from a neutron generator has been evaluated. The detector shows 3 distinct properties simultaneously, i.e. (1) good gamma-ray pulse height reduction, (2) discrimination against 14-MeV neutrons entering at angles non-parallel to the fiber axis, and (3) production of a full energy peak of 14-MeV recoil protons in the direction of the fiber axes. Investigations by Monte Carlo simulation are also included.

  14. Evaluation of Si(Li) detectors for use in Compton telescopes

    SciTech Connect

    Tindall, C.; Hau, I.D.; Luke, P.N.

    2002-05-01

    Si(Li) detectors are currently being developed for use in large Compton telescopes. A major advantage of silicon when compared with germanium is its ability to operate at significantly higher temperature. To determine the feasibility of using Si(Li) detectors in a Compton telescope, their performance as a function of temperature has been studied. We present leakage current, noise data and gamma-ray spectral performance at various temperatures for single 6-mm thick planar devices. It has been determined that for detectors without a guard ring, the noise began to rise significantly around 210K. Adding a guard ring improved the leakage current by about an order of magnitude and reduced the total noise (detector plus electronics) by about 25 percent. The noise of the detectors with {approx}130 mm2 area and a guard ring did not exceed our performance goal of 2 keV FWHM until the temperature was approximately 240K. For 122 keV gamma rays, no evidence of ballistic deficit was seen at 8 ms peaking time and bias voltages corresponding to an internal electric field of {approx}1150 V/cm. Some evidence of ballistic deficit was seen for 662 keV gamma rays at temperatures above 220K.

  15. Angle detector

    NASA Technical Reports Server (NTRS)

    Parra, G. T. (Inventor)

    1978-01-01

    An angle detector for determining a transducer's angular disposition to a capacitive pickup element is described. The transducer comprises a pendulum mounted inductive element moving past the capacitive pickup element. The capacitive pickup element divides the inductive element into two parts L sub 1 and L sub 2 which form the arms of one side of an a-c bridge. Two networks R sub 1 and R sub 2 having a plurality of binary weighted resistors and an equal number of digitally controlled switches for removing resistors from the networks form the arms of the other side of the a-c bridge. A binary counter, controlled by a phase detector, balances the bridge by adjusting the resistance of R sub 1 and R sub 2. The binary output of the counter is representative of the angle.

  16. Flame Detector

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Scientific Instruments, Inc. has now developed a second generation, commercially available instrument to detect flames in hazardous environments, typically refineries, chemical plants and offshore drilling platforms. The Model 74000 detector incorporates a sensing circuit that detects UV radiation in a 100 degree conical field of view extending as far as 250 feet from the instrument. It operates in a bandwidth that makes it virtually 'blind' to solar radiation while affording extremely high sensitivity to ultraviolet flame detection. A 'windowing' technique accurately discriminates between background UV radiation and ultraviolet emitted from an actual flame, hence the user is assured of no false alarms. Model 7410CP is a combination controller and annunciator panel designed to monitor and control as many as 24 flame detectors. *Model 74000 is no longer being manufactured.

  17. Neutron detector

    DOEpatents

    Stephan, Andrew C.; Jardret; Vincent D.

    2011-04-05

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  18. Temperature and illumination intensity dependence of photoconductivity in sputter-deposited heteroepitaxial (100)CdTe layers

    NASA Astrophysics Data System (ADS)

    Das, S. R.; Cook, J. G.; Mukherjee, G.

    1991-06-01

    The photoconductivity behavior and the Hall-effect of sputter-deposited heteroepitaxial (100)CdTe layers grown at temperatures between 300 and 325 C were investigated. The (100)CdTe epilayers were found to be highly photoconductive and exhibited photoconductivity/dark conductivity ratios as high as 1 x 10 to the 6th at around 200 K. Photoconductivity showed a sublinear dependence on the illumination intensity and was higher at higher temperatures. It is shown that the model of Simmons and Taylor (1974) developed to explain photoconductivity in amorphous semiconductors is also applicable to the (100)CdTe epitaxial layers.

  19. Assembly of light-emitting diode based on hydrophilic CdTe quantum dots incorporating dehydrated silica gel.

    PubMed

    Du, Jinhua; Wang, Chunlei; Xu, Xiaojing; Wang, Zhuyuan; Xu, Shuhong; Cui, Yiping

    2016-03-01

    Stable photoluminescence QD light-emitting diodes (QD-LEDs) were made based on hydrophilic CdTe quantum dots (QDs). A quantum dot-inorganic nanocomposite (hydrophilic CdTe QDs incorporating dehydrated silica gel) was prepared by two methods (rotary evaporation and freeze drying). Taking advantage of its viscosity, plasticity and transparency, dehydrated silica gel could be coated on the surface of ultraviolet (UV) light LEDs to make photoluminescence QD-LEDs. This new photoluminescence QD-LED, which is stable, environmentally non-toxic, easy to operate and low cost, could expand the applications of hydrophilic CdTe QDs in photoluminescence. PMID:26199049

  20. Investigation of radiation doses in open space using TLD detectors.

    PubMed

    Reitz, G; Facius, R; Bilski, P; Olko, P

    2002-01-01

    The low energy component of the cosmic radiation field is strongly modified by the shielding of the spacecraft and it is time and location dependent. Thermoluminescent lithium fluoride detectors have been applied to determine the radiation doses inside the ESA-Facility BIOPAN. The BIOPAN facility was mounted outside and launched on a Foton spacecraft and opened to space to allow exposure of several experiments to open space. Standard TLD-600. TLD-700 chips, two layers MTS-Ns sintered pellets with different effective thickness of the sensitive layer and MTS-N of different thickness have been exposed with different shielding thicknesses in front of them. The measured TL signal in the 0.1 mm thick detector just shielded by an aluminised Kapton foil of 25 microm thickness in front yielded a dose of 29.8 Gy (calibrated with 137Cs gamma rays) for an exposure time of 12.7 days: after 2.5 g.cm(-2) shielding the doses dropped to 3 mGy. The monitoring of radiation doses and its depth dose distribution outside the spacecraft are of great interest for radiation protection of astronauts working in open space. The knowledge of depth-dose distribution is a prerequisite to determine the organ doses an astronaut will receive during an extravehicular activity (EVA). The BIOPAN experiments are to be continued in the future. PMID:12382937

  1. Surface plasmon polariton enhanced ultrathin nano-structured CdTe solar cell.

    PubMed

    Luk, Ting S; Fofang, Nche T; Cruz-Campa, Jose L; Frank, Ian; Campione, Salvatore

    2014-08-25

    We demonstrate numerically that two-dimensional arrays of ultrathin CdTe nano-cylinders on Ag can serve as an effective broadband anti-reflection structure for solar cell applications. Such devices exhibit strong absorption properties, mainly in the CdTe semiconductor regions, and can produce short-circuit current densities of 23.4 mA/cm(2), a remarkable number in the context of solar cells given the ultrathin dimensions of our nano-cylinders. The strong absorption is enabled via excitation of surface plasmon polaritons (SPPs) under plane wave incidence. In particular, we identified the key absorption mechanism as enhanced fields of the SPP standing waves residing at the interface of CdTe nano-cylinders and Ag. We compare the performance of Ag, Au, and Al substrates, and observe significant improvement when using Ag, highlighting the importance of using low-loss metals. Although we use CdTe here, the proposed approach is applicable to other solar cell materials with similar absorption properties. PMID:25322192

  2. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    SciTech Connect

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  3. Molecular-beam epitaxy of CdTe on large area Si(100)

    NASA Astrophysics Data System (ADS)

    Sporken, R.; Lange, M. D.; Faurie, J. P.; Petruzzello, J.

    1991-10-01

    We have grown CdTe directly on 2- and 5-in. diam Si(100) by molecular-beam epitaxy and characterized the layers by in situ reflection high-energy electron diffraction, double crystal x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and low-temperature photoluminescence. The films are up to 10-μm thick and mirror-like over their entire surface. Even on 5-in. diam wafers, the structural and thickness uniformity is excellent. Two domains, oriented 90° apart, are observed in the CdTe films on oriented Si(100) substrates, whereas single-domain films are grown on Si(100) titled 6° or 8° toward [011]. The layers on misoriented substrates have better morphology than those on oriented Si(100), and the substrate tilt also eliminates twinning in the CdTe layers. First attempts to grow HgCdTe on Si(100 with a CdTe buffer layer have produced up to 10-μm thick layers with cutoff wavelengths between 5 and 10-μm and with an average full width at half-maximum of the double-crystal x-ray diffraction peaks of 200 arc s.

  4. Photorefractive nonlinearities caused by the Dember space-charge field in undoped CdTe.

    PubMed

    Schroeder, W A; Stark, T S; Boggess, T F; Smirl, A L; Valley, G C

    1991-06-01

    The photorefractive nonlinearity associated with the Dember space-charge field between electrons and holes produced by two-photon absorption is unambiguously isolated and studied in undoped CdTe by using a nondegenerate, forward-probing, polarization-sensitive, transient-grating technique with a temporal resolution of <5 ps. PMID:19776789

  5. Investigation of deep level defects in CdTe thin films

    SciTech Connect

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  6. The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires.

    PubMed

    Neretina, S; Hughes, R A; Devenyi, G A; Sochinskii, N V; Preston, J S; Mascher, P

    2008-05-01

    Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires. PMID:21825689

  7. Analysis of electroluminescence images in small-area circular CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

    2013-09-01

    The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

  8. Characterization of Highly Efficient CdTe Thin Film Solar Cells by Low-Temperature Photoluminescence

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Matsuzaki, Yuichi; Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    1998-07-01

    Highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method with a glass/ITO/CdS/CdTe/Cu-doped carbon/Ag structure were characterized by low-temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to VCd Cl defect complexes appeared as a result of CdCl2 treatment. CdS/CdTe junction PL revealed that a CdSxTe1-x mixed crystal layer was formed at the CdS/CdTe interface region during the deposition of CdTe by CSS and that CdCl2 treatment promoted the formation of the mixed crystal layer. Furthermore, in the PL spectra of the heat-treated CdTe after screen printing of the Cu-doped carbon electrode, a neutral-acceptor bound exciton (ACu0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment.

  9. Second Harmonic Generation in CdTe Plate by Free Electron Laser

    NASA Astrophysics Data System (ADS)

    Yamauchi, Toshihiko; Kikuzawa, Nobuhiro; Minehara, Eisuke; Nagai, Ryoji; Nishimori, Nobuyuki; Sawamura, Masaru; Hajima, Ryoichi; Shizuma, Toshiyuki; Hayakawa, Takehito

    2000-10-01

    The second harmonic generation (SHG) signal converted from the 22 μm input wavelength of free electron laser (FEL) is observed using a non-birefringent CdTe crystal. The conversion efficiency of SHG is experimentally obtained to be ˜3× 10-5%/(MWcm-2).

  10. 14%-efficient flexible CdTe solar cells on ultra-thin glass substrates

    SciTech Connect

    Rance, W. L.; Burst, J. M.; Reese, M. O.; Gessert, T. A.; Metzger, W. K.; Barnes, T. M.; Meysing, D. M.; Wolden, C. A.; Garner, S.; Cimo, P.

    2014-04-07

    Flexible glass enables high-temperature, roll-to-roll processing of superstrate devices with higher photocurrents than flexible polymer foils because of its higher optical transmission. Using flexible glass in our high-temperature CdTe process, we achieved a certified record conversion efficiency of 14.05% for a flexible CdTe solar cell. Little has been reported on the flexibility of CdTe devices, so we investigated the effects of three different static bending conditions on device performance. We observed a consistent trend of increased short-circuit current and fill factor, whereas the open-circuit voltage consistently dropped. The quantum efficiency under the same static bend condition showed no change in the response. After storage in a flexed state for 24 h, there was very little change in device efficiency relative to its unflexed state. This indicates that flexible glass is a suitable replacement for rigid glass substrates, and that CdTe solar cells can tolerate bending without a decrease in device performance.

  11. A simple and sensitive label-free fluorescence sensing of heparin based on Cdte quantum dots.

    PubMed

    Rezaei, B; Shahshahanipour, M; Ensafi, Ali A

    2016-06-01

    A rapid, simple and sensitive label-free fluorescence method was developed for the determination of trace amounts of an important drug, heparin. This new method was based on water-soluble glutathione-capped CdTe quantum dots (CdTe QDs) as the luminescent probe. CdTe QDs were prepared according to the published protocol and the sizes of these nanoparticles were verified through transmission electron microscopy (TEM), X-ray diffraction (XRD) and dynamic light scattering (DLS) with an average particle size of about 7 nm. The fluorescence intensity of glutathione-capped CdTe QDs increased with increasing heparin concentration. These changes were followed as the analytical signal. Effective variables such as pH, QD concentration and incubation time were optimized. At the optimum conditions, with this optical method, heparin could be measured within the range 10.0-200.0 ng mL(-1) with a low limit of detection, 2.0 ng mL(-1) . The constructed fluorescence sensor was also applied successfully for the determination of heparin in human serum. Copyright © 2015 John Wiley & Sons, Ltd. PMID:26542329

  12. Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2

    NASA Astrophysics Data System (ADS)

    Jensen, S. A.; Burst, J. M.; Duenow, J. N.; Guthrey, H. L.; Moseley, J.; Moutinho, H. R.; Johnston, S. W.; Kanevce, A.; Al-Jassim, M. M.; Metzger, W. K.

    2016-06-01

    For decades, polycrystalline CdTe thin films for solar applications have been restricted to grain sizes of microns or less whereas other semiconductors such as silicon and perovskites have produced devices with grains ranging from less than a micron to more than 1 mm. Because the lifetimes in as-deposited polycrystalline CdTe films are typically limited to less than a few hundred picoseconds, a CdCl2 treatment is generally used to improve the lifetime; but this treatment may limit the achievable hole density by compensation. Here, we establish methods to produce CdTe films with grain sizes ranging from hundreds of nanometers to several hundred microns by close-spaced sublimation at industrial manufacturing growth rates. Two-photon excitation photoluminescence spectroscopy shows a positive correlation of lifetime with grain size. Large-grain, as-deposited CdTe exhibits lifetimes exceeding 10 ns without Cl, S, O, or Cu. This uncompensated material allows dopants such as P to achieve a hole density of 1016 cm-3, which is an order of magnitude higher than standard CdCl2-treated devices, without compromising the lifetime.

  13. Interfacial charge transfer between CdTe quantum dots and Gram negative vs. Gram positive bacteria.

    SciTech Connect

    Dumas, E.; Gao, C.; Suffern, D.; Bradforth, S. E.; Dimitrejevic, N. M.; Nadeau, J. L.; McGill Univ.; Univ. of Southern California

    2010-01-01

    Oxidative toxicity of semiconductor and metal nanomaterials to cells has been well established. However, it may result from many different mechanisms, some requiring direct cell contact and others resulting from the diffusion of reactive species in solution. Published results are contradictory due to differences in particle preparation, bacterial strain, and experimental conditions. It has been recently found that C{sub 60} nanoparticles can cause direct oxidative damage to bacterial proteins and membranes, including causing a loss of cell membrane potential (depolarization). However, this did not correlate with toxicity. In this study we perform a similar analysis using fluorescent CdTe quantum dots, adapting our tools to make use of the particles fluorescence. We find that two Gram positive strains show direct electron transfer to CdTe, resulting in changes in CdTe fluorescence lifetimes. These two strains also show changes in membrane potential upon nanoparticle binding. Two Gram negative strains do not show these effects - nevertheless, they are over 10-fold more sensitive to CdTe than the Gram positives. We find subtoxic levels of Cd{sup 2+} release from the particles upon irradiation of the particles, but significant production of hydroxyl radicals, suggesting that the latter is a major source of toxicity. These results help establish mechanisms of toxicity and also provide caveats for use of certain reporter dyes with fluorescent nanoparticles which will be of use to anyone performing these assays. The findings also suggest future avenues of inquiry into electron transfer processes between nanomaterials and bacteria.

  14. Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices

    NASA Astrophysics Data System (ADS)

    Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea

    To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.

  15. Neutrino Detectors

    NASA Astrophysics Data System (ADS)

    von Feilitzsch, Franz; Lanfranchi, Jean-Côme; Wurm, Michael

    The neutrino was postulated by Wolfgang Pauli in the early 1930s, but could only be detected for the first time in the 1950s. Ever since scientists all around the world have worked on the detection and understanding of this particle which so scarcely interacts with matter. Depending on the origin and nature of the neutrino, various types of experiments have been developed and operated. In this entry, we will review neutrino detectors in terms of neutrino energy and associated detection technique as well as the scientific outcome of some selected examples. After a brief historical introduction, the detection of low-energy neutrinos originating from nuclear reactors or from the Earth is used to illustrate the principles and difficulties which are encountered in detecting neutrinos. In the context of solar neutrino spectroscopy, where the neutrino is used as a probe for astrophysics, three different types of neutrino detectors are presented - water Čerenkov, radiochemical, and liquid-scintillator detectors. Moving to higher neutrino energies, we discuss neutrinos produced by astrophysical sources and from accelerators. The entry concludes with an overview of a selection of future neutrino experiments and their scientific goals.

  16. Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

    NASA Astrophysics Data System (ADS)

    Hitomi, K.; Murayama, T.; Shoji, T.; Suehiro, T.; Hiratate, Y.

    1999-06-01

    Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime ( μτ) product and the energy required to create an electron-hole pair (the ɛ value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV γ-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the ɛ value has been estimated to be about 5.85 eV for the TlBr crystal.

  17. A YSO/LSO phoswich array detector for single and coincidence photon imaging

    SciTech Connect

    Dahlbom, M.; MacDonald, L.R.; Schmand, M.; Eriksson, L.; Andreaco, M.; Williams, C.

    1998-06-01

    The performance of a phoswich array detector module for possible use in a combined single and coincidence photon imaging system has been evaluated. The assumption is that this detection module would allow the construction of a combined SPECT/PET imaging system with better count rate performance in the coincidence mode compared to current dual headed scintillation cameras. The detector consist of a linear array of discrete 4 x 4 x 15 mm{sup 3} YSO elements coupled to a combined detector array/light guide of LSO, 10 mm thick. Since the scintillation light decay time is different in YSO and LSO (70 and 40 ns, respectively), events originating from the two detector materials can be separated by pulse shape discrimination. The front layer of YSO could then be used for detection of low energy, single photon events and the LSO layer for coincidence detection of annihilation radiation. The light collection of the PMTs coupled to the detector was found to be adequate to accurately identify each detector element in the array using the same positioning logic used in conventional BGO block detectors. The average energy resolution of the YSO elements at 140 keV for the block detector was found to be 14.5% FWHM, ranging from 13.8 to 15.4%. Spatial resolution of the detector block in single photon mode, using a high resolution collimator (geometric resolution 6.5 mm at 10 cm) was measured by scanning a {sup 99m}Tc line source. The resolution at 5 and 10 cm from the collimator face was found to be 5.9 and 8.5 mm FWHM, respectively.

  18. Image quality in two phosphor-based flat panel digital radiographic detectors.

    PubMed

    Samei, Ehsan

    2003-07-01

    Two general types of phosphor screens are currently used in indirect digital radiographic systems: structured phosphor screens and turbid phosphor screens. The purpose of the study was to experimentally compare the image quality characteristics of two flat-panel digital radiography detectors with similar electronics and pixel sizes (0.127 mm), but otherwise equipped with the two types of screens (0.6-mm-thick structured CsI and Lanex Regular). The presampled modulation transfer functions (MTFs) of the detectors were assessed using an edge method. The noise power spectra (NPS) were measured by two-dimensional Fourier analysis of uniformly-exposed radiographs at 50-100 kVp with 19 mm added Al filtration. The detective quantum efficiencies (DQEs) were assessed from the MTF, the NPS, and estimates of the ideal signal-to-noise ratio. The MTF measures of the two detectors were generally similar above a spatial frequency of 2 mm(-1), with approximately 2.5 and approximately 3.8 mm(-1) spatial frequencies corresponding to 0.2 MTF and 0.1 MTF, respectively. Below 2 mm(-1), the MTF for the CsI-based detector was slightly higher by an average of 0.07. At 70 kVp, the measured DQE values in the diagonal (and axial) direction(s) at spatial frequencies of 0.15 mm(-1) and 2.5 mm(-1) were 78% (78%) and 26% (20%) for the CsI-based detector, and 20% (20%) and 7% (6%) for the Lanex-based detector, respectively. The comparative findings experimentally confirm that in indirect flat-panel detectors, structured phosphor screens provide a more favorable tradeoff between resolution and noise compared to turbid-phosphor screens, effectively increasing the detection efficiency of the detector without a negative impact on the detector's spatial resolution response. PMID:12906192

  19. Improvement of the charge-carrier transport property of polycrystalline CdTe for digital fluoroscopy

    NASA Astrophysics Data System (ADS)

    Oh, K. M.; Heo, Y. J.; Kim, D. K.; Kim, J. S.; Shin, J. W.; Lee, G. H.; Nam, S. H.

    2014-05-01

    Minimizing the radiation impact to the patient is currently an important issue in medical imaging. Particularly, in case of X-ray fluoroscopy, the patient is exposed to high X-ray dose because a large number of images is required in fluoroscopic procedures. In this regard, a direct-conversion X-ray sensor offers the advantages of high quantum efficiency, X-ray sensitivity, and high spatial resolution. In particular, an X-ray sensor in fluoroscopy operates at high frame rate, in the range from 30 to 60 image frames per second. Therefore, charge-carrier transport properties and signal lag are important factors for the development of X-ray sensors in fluoroscopy. In this study, in order to improve the characteristics of polycrystalline cadmium telluride (CdTe), CdTe films were prepared by thermal evaporation and RF sputtering. The deposition was conducted to form a CdTeO3 layer on top of a CdTe film. The role of CdTeO3 is not only to improve the charge-carrier transport by increasing the life-time but also to reduce the leakage current of CdTe films by acting as a passivation layer. In this paper, to establish the effect of a thin oxide layer on top of a CdTe film, the morphological and electrical properties including charge-carrier transport and signal lag were investigated by means of X-ray diffraction, X-ray photoemission spectroscopy, and resistivity measurements.

  20. Study of spatial resolution of proton computed tomography using a silicon strip detector

    NASA Astrophysics Data System (ADS)

    Saraya, Y.; Izumikawa, T.; Goto, J.; Kawasaki, T.; Kimura, T.

    2014-01-01

    Proton computed tomography (CT) is an imaging technique using a high-energy proton beam penetrating the human body and shows promise for improving the quality of cancer therapy with high-energy particle beams because more accurate electron density distribution measurements can be achieved with proton CT. The deterioration of the spatial resolution owing to multiple Coulomb scattering is, however, a crucial issue. The control of the radiation dose and the long exposure time are also problems to be solved. We have developed a prototype system for proton CT with a silicon strip detector and performed a beam test for imaging. The distribution of the electron density has been measured precisely. We also demonstrated an improvement in spatial resolution by reconstructing the proton trajectory. A spatial resolution of 0.45 mm is achieved for a 25-mm-thick polyethylene object. This will be a useful result for upgrading proton CT application for practical use.

  1. Characterization of a high-purity germanium detector for small-animal SPECT

    PubMed Central

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-01-01

    We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

  2. Water-soluble CdTe quantum dots as an anode interlayer for solution-processed near infrared polymer photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Xilan; Zhou, Jinjun; Zheng, Jie; Becker, Matthew L.; Gong, Xiong

    2013-11-01

    Water-soluble cadmium telluride (CdTe) quantum dots (QDs) used as an anode interlayer in solution-processed near infrared (NIR) polymer photodetectors (PDs) were demonstrated. Polymer PDs incorporated with CdTe QDs as an anode interlayer exhibited 10-fold suppressed dark current density and analogous photocurrent density relative to poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), which resulted in enhanced detectivities over 1011 Jones in the spectral range from 350 nm to 900 nm. Moreover, with the substitution of PEDOT:PSS by CdTe QDs, the stability of unencapsulated NIR polymer PDs was extended up to 650 hours, which is more than 3 times longer than those with PEDOT:PSS as an anode interlayer. These results indicated that CdTe QDs can be utilized as a solution-processable alternative to PEDOT:PSS as an anode interlayer for high performance NIR polymer PDs.

  3. Influence of Kilo-Electron Oxygen Ion Irradiation on Structural, Electrical and Optical Properties of CdTe Thin Films

    NASA Astrophysics Data System (ADS)

    Honey, Shehla; Thema, F. T.; Bhatti, M. T.; Ishaq, A.; Naseem, Shahzad; Maaza, M.

    2016-09-01

    In this paper, effect of oxygen (O+) ion irradiation on the properties of polycrystalline cubic structure CdTe thin films has been investigated. CdTe thin films were irradiated with O+ ions of energy 80keV at different fluence ranging from 1×1015 to 5×1016 ion/cm2 at room temperature. At 1×1015 ion/cm2 O+ ions fluence, the CdTe structure was maintained while XRD peaks of cubic phase were shifted toward lower angles. At 5×1016 ion/cm2 O+ ions fluence, cubic structure of CdTe thin films was transformed into hexagonal structure. In addition, electrical resistivity and optical bandgap were decreased with increasing O+ ion beam irradiation.

  4. High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Rao, S. R.; Shintri, S. S.; Markunas, J. K.; Jacobs, R. N.; Bhat, I. B.

    2011-08-01

    High-quality (211)B CdTe buffer layers are required during Hg1- x Cd x Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 105 cm-2. These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam epitaxy.

  5. Luminescence Enhancement of CdTe Nanostructures in LaF3:Ce/CdTe Nanocomposites

    SciTech Connect

    Yao, Mingzhen; Zhang, Xing; Ma, Lun; Chen, Wei; Joly, Alan G.; Huang, Jinsong; Wang, Qingwu

    2010-11-15

    Radiation detection demands new scintillators with high quantum efficiency, high energy resolution and short luminescence lifetimes. Nanocomposites consisting of quantum dots and Ce3+ doped nanophosphors may be able to meet these requirements. Here we report the luminescence of LaF3:Ce/CdTe nanocomposites which were synthesized by a wet chemistry method. In LaF3:Ce/CdTe nanocomposites the CdTe quantum dots are converted into nanowires, while in LaF3/CdTe nanocomposites no such conversion is observed. The CdTe luminescence in LaF3:Ce/CdTe nanocomposites is enhanced about 5 times, while in LaF3/CdTe nanocomposites no enhancement was observed. Energy transfer, light-re-absorption and surface passivation are likely the reasons for the luminescence enhancement.

  6. X-ray radiation influence on photoluminescence spectra of composite thin films based on C60<CdTe>

    NASA Astrophysics Data System (ADS)

    Elistratova, M. A.; Zakharova, I. B.; Romanov, N. M.

    2015-01-01

    Photoluminescence spectra of composite thin films based on C60<CdTe> before and after X-ray irradiation, as well as the results of quantum-chemical calculations of corresponding molecular complexes are presented. Fullerene films doped by CdTe with various concentrations were obtained by means of vacuum co-evaporation in a Knudsen cell. Composition and surface morphology were measured by secondary electron microscopy and energy-dispersive X-ray spectroscopy. X-ray irradiated films were considered, and additional peaks in photoluminescence spectra were detected. These peaks appear as a result of molecular complexes formation from C60CdTe mixture and dimerization of the films. Density functional B3LYP quantum-chemical calculations for C60CdTe, molecular complexes, (C60)2 and C120O dimers were performed to elucidate some experimental results.

  7. In situ preparation of fluorescent CdTe quantum dots with small thiols and hyperbranched polymers as co-stabilizers

    PubMed Central

    2014-01-01

    A new strategy for in situ preparation of highly fluorescent CdTe quantum dots (QDs) with 3-mercaptopropionic acid (MPA) and hyperbranched poly(amidoamine)s (HPAMAM) as co-stabilizers was proposed in this paper. MPA and HPAMAM were added in turn to coordinate Cd2+. After adding NaHTe and further microwave irradiation, fluorescent CdTe QDs stabilized by MPA and HPAMAM were obtained. Such a strategy avoids the aftertreatment of thiol-stabilized QDs in their bioapplication and provides an opportunity for direct biomedical use of QDs due to the existence of biocompatible HPAMAM. The resulting CdTe QDs combine the mechanical, biocompatibility properties of HPAMAM and the optical, electrical properties of CdTe QDs together. PMID:24636234

  8. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

    2008-06-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  9. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire.

    PubMed

    Wojnar, P; Płachta, J; Zaleszczyk, W; Kret, S; Sanchez, Ana M; Rudniewski, R; Raczkowska, K; Szymura, M; Karczewski, G; Baczewski, L T; Pietruczik, A; Wojtowicz, T; Kossut, J

    2016-03-14

    We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis. PMID:26903109

  10. Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    SciTech Connect

    Teeter, G.; Asher, S.

    2008-05-01

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devices during device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.

  11. One-Dimensional Reaction-Diffusion Simulation of Cu Migration in Polycrystalline CdTe Solar Cells

    SciTech Connect

    Guo, Da; Akis, Richard; Brinkman, Daniel; Sankin, Igor; Fang, Tian; Vasileska, Dragica; Ringhofer, Christain

    2014-06-13

    In this work, we report on developing 1D reaction-diffusion solver to understand the kinetics of p-type doping formation in CdTe absorbers and to shine some light on underlying causes of metastabilities observed in CdTe PV devices. Evolution of intrinsic and Cu-related defects in CdTe solar cell has been studied in time-space domain self-consistently with free carrier transport and Poisson equation. Resulting device performance was simulated as a function of Cu diffusion anneal time showing pronounced effect the evolution of associated acceptor and donor states can cause on device characteristics. Although 1D simulation has intrinsic limitations when applied to poly-crystalline films, the results suggest strong potential of the approach in better understanding of the performance and metastabilities of CdTe photovoltaic device.

  12. Dust Detector

    NASA Technical Reports Server (NTRS)

    Kelley, M. C.

    2001-01-01

    We discuss a recent sounding rocket experiment which found charged dust in the Earth's tropical mesosphere. The dust detector was designed to measure small (5000 - 10000 amu.) charged dust particles, most likely of meteoric origin. A 5 km thick layer of positively charged dust was found at an altitude of 90 km, in the vicinity of an observed sporadic sodium layer and sporadic E layer. The observed dust was positively charged in the bulk of the dust layer, but was negatively charged near the bottom.

  13. Ion detector

    DOEpatents

    Tullis, Andrew M.

    1987-01-01

    An improved ion detector device of the ionization detection device chamber ype comprises an ionization chamber having a central electrode therein surrounded by a cylindrical electrode member within the chamber with a collar frictionally fitted around at least one of the electrodes. The collar has electrical contact means carried in an annular groove in an inner bore of the collar to contact the outer surface of the electrode to provide electrical contact between an external terminal and the electrode without the need to solder leads to the electrode.

  14. Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Sharma, Dharma; Ramsey, Brian; Seller, Paul

    2003-01-01

    As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

  15. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire

    NASA Astrophysics Data System (ADS)

    Wojnar, P.; Płachta, J.; Zaleszczyk, W.; Kret, S.; Sanchez, Ana M.; Rudniewski, R.; Raczkowska, K.; Szymura, M.; Karczewski, G.; Baczewski, L. T.; Pietruczik, A.; Wojtowicz, T.; Kossut, J.

    2016-03-01

    We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08806b

  16. Hydrogenation of undoped and nitrogen doped CdTe and ZnSe grown by molecular beam epitaxy

    SciTech Connect

    Hirsch, L.S.; Setzler, S.D.; Ptak, A.J.; Giles, N.C.; Myers, T.H.

    1998-12-31

    Hydrogen incorporation in both undoped and nitrogen-doped CdTe and ZnSe is investigated. Evidence for a strong nitrogen-hydrogen interaction is presented. Preliminary data indicate that the growth of CdTe and ZnSe under an atomic hydrogen flux results in a significant concentration of paramagnetic defects possibly accompanied by enhanced auto-doping from residual impurities.

  17. Evaluation of toxic effects of CdTe quantum dots on the reproductive system in adult male mice.

    PubMed

    Li, Xiaohui; Yang, Xiangrong; Yuwen, Lihui; Yang, Wenjing; Weng, Lixing; Teng, Zhaogang; Wang, Lianhui

    2016-07-01

    Fluorescent quantum dots (QDs) are highly promising nanomaterials for various biological and biomedical applications because of their unique optical properties, such as robust photostability, strong photoluminescence, and size-tunable fluorescence. Several studies have reported the in vivo toxicity of QDs, but their effects on the male reproduction system have not been examined. In this study, we investigated the reproductive toxicity of cadmium telluride (CdTe) QDs at a high dose of 2.0 nmol per mouse and a low dose of 0.2 nmol per mouse. Body weight measurements demonstrated there was no overt toxicity for both dose at day 90 after exposure, but the high dose CdTe affected body weight up to 15 days after exposure. CdTe QDs accumulated in the testes and damaged the tissue structure for both doses on day 90. Meanwhile, either of two CdTe QDs treatments did not significantly affect the quantity of sperm, but the high dose CdTe significantly decreased the quality of sperm on day 60. The serum levels of three major sex hormones were also perturbed by CdTe QDs treatment. However, the pregnancy rate and delivery success of female mice that mated with the treated male mice did not differ from those mated with untreated male mice. These results suggest that CdTe QDs can cause testes toxicity in a dose-dependent manner. The low dose of CdTe QDs is relatively safe for the reproductive system of male mice. Our preliminary result enables better understanding of the reproductive toxicity induced by cadmium-containing QDs and provides insight into the safe use of these nanoparticles in biological and environmental systems. PMID:27135714

  18. Band offsets for mismatched interfaces. The special case of ZnO on CdTe (001)

    SciTech Connect

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C.; Varga, Tamas

    2013-08-02

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications, but appear difficult to achieve given the rather different crystal structures (CdTe is zinc blende with cubic lattice constant a = 6.482 Å, ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å.) However, ZnO has been reported to occur in some epitaxially stabilized films in the zinc blende structure with an fcc primitive lattice constant close to the hexagonal a value. Observing that this value equals half of the CdTe cubic lattice constant to within 1%, we propose that (001)-oriented cubic ZnO films could be grown epitaxially on a CdTe (001) surface in an R45° √2 x √2 configuration. Many terminations and alignments (in-plane fractional translations) are possible, and we describe density-functional total-energy electronic-structure calculations on several configurations to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe (001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a type II alignment as needed, for example, in solar cells. We also describe recent experiments that corroborate some of these predictions.

  19. Band offsets for mismatched interfaces: The special case of ZnO on CdTe (001)

    SciTech Connect

    Jaffe, John E.; Kaspar, Tiffany C.; Droubay, Timothy C.; Varga, Tamas

    2013-11-15

    High-quality planar interfaces between ZnO and CdTe would be useful in optoelectronic applications. Although CdTe is zinc blende with cubic lattice constant a = 6.482 Å while ZnO is hexagonal wurtzite with a = 3.253 Å and c = 5.213 Å, (001)-oriented cubic zinc blende ZnO films could be stabilized epitaxially on a CdTe (001) surface in an √2 × √2 R45° configuration with a lattice mismatch of <0.5%. Modeling such a configuration allows density-functional total-energy electronic-structure calculations to be performed on several interface arrangements (varying terminations and in-plane fractional translations) to identify the most likely form of the interface, and to predict valence-band offsets between CdTe and ZnO in each case. Growth of ZnO on Te-terminated CdTe(001) is predicted to produce small or even negative (CdTe below ZnO) valence band offsets, resulting in a Type I band alignment. Growth on Cd-terminated CdTe is predicted to produce large positive offsets for a Type II alignment as needed, for example, in solar cells. To corroborate some of these predictions, thin layers of ZnO were deposited on CdTe(001) by pulsed laser deposition, and the band alignments of the resulting heterojunctions were determined from x-ray photoelectron spectroscopy measurements. Although zinc blende ZnO could not be confirmed, the measured valence band offset (2.0–2.2 eV) matched well with the predicted value.

  20. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    SciTech Connect

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  1. Process Development for High Voc CdTe Solar Cells: Phase I, Annual Technical Report, October 2005 - September 2006

    SciTech Connect

    Ferekides, C. S.; Morel, D. L.

    2007-04-01

    The focus of this project is the open-circuit voltage of the CdTe thin-film solar cell. CdTe continues to be one of the leading materials for large-scale cost-effective production of photovoltaics, but the efficiency of the CdTe solar cell has been stagnant for the last few years. At the manufacturing front, the CdTe technology is fast paced and moving forward with U.S.-based First Solar LLC leading the world in CdTe module production. To support the industry efforts and continue the advancement of this technology, it will be necessary to continue improvements in solar cell efficiency. A closer look at the state-of-the-art performance levels puts the three solar cell efficiency parameters of short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) in the 24-26 mA/cm2, 844?850 mV, and 74%-76% ranges respectively. During the late 1090s, efforts to improve cell efficiency were primarily concerned with increasing JSC, simply by using thinner CdS window layers to enhance the blue response (<510 nm) of the CdTe cell. These efforts led to underscoring the important role 'buffers' (or high-resistivity transparent films) play in CdTe cells. The use of transparent bi-layers (low-p/high-p) as the front contact is becoming a 'standard' feature of the CdTe cell.

  2. Solution-Processed, Ultrathin Solar Cells from CdCl3(-)-Capped CdTe Nanocrystals: The Multiple Roles of CdCl3(-) Ligands.

    PubMed

    Zhang, Hao; Kurley, J Matthew; Russell, Jake C; Jang, Jaeyoung; Talapin, Dmitri V

    2016-06-22

    Solution-processed CdTe solar cells using CdTe nanocrystal (NC) ink may offer an economically viable route for large-scale manufacturing. Here we design a new CdCl3(-)-capped CdTe NC ink by taking advantage of novel surface chemistry. In this ink, CdCl3(-) ligands act as surface ligands, sintering promoters, and dopants. Our solution chemistry allows obtaining very thin continuous layers of high-quality CdTe which is challenging for traditional vapor transport methods. Using benign solvents, in air, and without additional CdCl2 treatment, we obtain a well-sintered CdTe absorber layer from the new ink and demonstrate thin-film solar cells with power conversion efficiency over 10%, a record efficiency for sub-400 nm thick CdTe absorber layer. PMID:27269672

  3. Liver Toxicity of Cadmium Telluride Quantum Dots (CdTe QDs) Due to Oxidative Stress in Vitro and in Vivo

    PubMed Central

    Zhang, Ting; Hu, Yuanyuan; Tang, Meng; Kong, Lu; Ying, Jiali; Wu, Tianshu; Xue, Yuying; Pu, Yuepu

    2015-01-01

    With the applications of quantum dots (QDs) expanding, many studies have described the potential adverse effects of QDs, yet little attention has been paid to potential toxicity of QDs in the liver. The aim of this study was to investigate the effects of cadmium telluride (CdTe) QDs in mice and murine hepatoma cells alpha mouse liver 12 (AML 12). CdTe QDs administration significantly increased the level of lipid peroxides marker malondialdehyde (MDA) in the livers of treated mice. Furthermore, CdTe QDs caused cytotoxicity in AML 12 cells in a dose- and time-dependent manner, which was likely mediated through the generation of reactive oxygen species (ROS) and the induction of apoptosis. An increase in ROS generation with a concomitant increase in the gene expression of the tumor suppressor gene p53, the pro-apoptotic gene Bcl-2 and a decrease in the anti-apoptosis gene Bax, suggested that a mitochondria mediated pathway was involved in CdTe QDs’ induced apoptosis. Finally, we showed that NF-E2-related factor 2 (Nrf2) deficiency blocked induced oxidative stress to protect cells from injury induced by CdTe QDs. These findings provide insights into the regulatory mechanisms involved in the activation of Nrf2 signaling that confers protection against CdTe QDs-induced apoptosis in hepatocytes. PMID:26404244

  4. Quantum dot sensitized solar cells. A tale of two semiconductor nanocrystals: CdSe and CdTe.

    PubMed

    Bang, Jin Ho; Kamat, Prashant V

    2009-06-23

    CdSe and CdTe nanocrystals are linked to nanostructured TiO2 films using 3-mercaptopropionic acid as a linker molecule for establishing the mechanistic aspects of interfacial charge transfer processes. Both these quantum dots are energetically capable of sensitizing TiO2 films and generating photocurrents in quantum dot solar cells. These two semiconductor nanocrystals exhibit markedly different external quantum efficiencies ( approximately 70% for CdSe and approximately 0.1% for CdTe at 555 nm). Although CdTe with a more favorable conduction band energy (E(CB) = -1.0 V vs NHE) is capable of injecting electrons into TiO2 faster than CdSe (E(CB) = -0.6 V vs NHE), hole scavenging by a sulfide redox couple remains a major bottleneck. The sulfide ions dissolved in aqueous solutions are capable of scavenging photogenerated holes in photoirradiated CdSe system but not in CdTe. The anodic corrosion and exchange of Te with S dominate the charge transfer at the CdTe interface. Factors that dictate the efficiency and photostability of CdSe and CdTe quantum dots are discussed. PMID:19435373

  5. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-09-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  6. CdTe solar cells with open-circuit voltage breaking the 1 V barrier

    NASA Astrophysics Data System (ADS)

    Burst, J. M.; Duenow, J. N.; Albin, D. S.; Colegrove, E.; Reese, M. O.; Aguiar, J. A.; Jiang, C.-S.; Patel, M. K.; Al-Jassim, M. M.; Kuciauskas, D.; Swain, S.; Ablekim, T.; Lynn, K. G.; Metzger, W. K.

    2016-03-01

    CdTe solar cells have the potential to undercut the costs of electricity generated by other technologies, if the open-circuit voltage can be increased beyond 1 V without significant decreases in current. However, in the past decades, the open-circuit voltage has stagnated at around 800-900 mV. This is lower than in GaAs solar cells, even though GaAs has a smaller bandgap; this is because it is more difficult to achieve simultaneously high hole density and lifetime in II-VI materials than in III-V materials. Here, by doping the CdTe with a Group V element, we report lifetimes in single-crystal CdTe that are nearly radiatively limited and comparable to those in GaAs over a hole density range relevant for solar applications. Furthermore, the deposition on CdTe of nanocrystalline CdS layers that form non-ideal heterointerfaces with 10% lattice mismatch impart no damage to the CdTe surface and show excellent junction transport properties. These results enable the fabrication of CdTe solar cells with open-circuit voltage greater than 1 V.

  7. Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2016-04-01

    Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

  8. The UCSD high energy X-ray timing experiment cosmic ray particle anticoincidence detector

    NASA Technical Reports Server (NTRS)

    Hink, P. L.; Rothschild, R. E.; Pelling, M. R.; Macdonald, D. R.; Gruber, D. E.

    1991-01-01

    The HEXTE, part of the X-Ray Timing Explorer (XTE), is designed to make high sensitivity temporal and spectral measurements of X-rays with energies between 15 and 250 keV using NaI/CsI phoswich scintillation counters. To achieve the required sensitivity it is necessary to provide anticoincidence of charged cosmic ray particles incident upon the instrument, some of which interact to produce background X-rays. The proposed cosmic ray particle anticoincidence shield detector for HEXTE uses a novel design based on plastic scintillators and wavelength-shifter bars. It consists of five segments, each with a 7 mm thick plastic scintillator, roughly 50 cm x 50 cm in size, coupled to two wavelength-shifter bars viewed by 1/2 inch photomultiplier tubes. These segments are configured into a five-sided, box-like structure around the main detector system. Results of laboratory testing of a model segment, and calculations of the expected performance of the flight segments and particle anticoincidence detector system are presented to demonstrate that the above anticoincidence detector system satisfies its scientific requirements.

  9. Background information and technological tests of hard X-ray detectors .

    NASA Astrophysics Data System (ADS)

    Natalucci, L.; Caroli, E.; Quadrini, E.; Del Sordo, S.; Ubertini, P.

    Hard X-ray detectors for astronomical observations are currently being designed with advanced background rejection capabilities, based on high level of pixelisation and on fast signal processing. The development of such devices, based on room temperature semiconductor such as CdTe or CdZnTe comes through extensive testing programs normally based on ground campaigns, using radioactive sources, X-ray tubes and particle beam accelerators. These methods show their limits, however, especially for the measurements of the response to the different types of hadrons. Firtsly, we briefly review the knowledge of the primary sources of background and of the different radiation environments both for space and balloon altitudes, for which typical fluxes/rates are given. Then, we discuss how flying prototypes on high altitude balloons can greatly help to test the detector performance in an environment almost as severe as the conditions found in orbit, with detectors responding at very similar rates.

  10. Advantages and limitations of cadmium selenide room temperature gamma ray detectors

    NASA Astrophysics Data System (ADS)

    Roth, M.

    1989-11-01

    State-of-the-art technology of spectrometer grade CdSe gamma ray detectors is presented in this paper. It is shown that high resistivity CdSe single crystals can be reproducibly grown by the temperature gradient solution zoning technique. Zone refining of Se used for crystal growth is found to reduce efficiently the concentration of Cu trace impurities, which are mainly responsible for the electron trapping. The charge carrier transport parameters are studied in detail, and the perspective of further improvement of the energy resolution of CdSe detectors are discussed. A comparison with the performance of CdTe and HgI2 nuclear radiation detectors is also given.

  11. The use of cadmium telluride detectors for the qualitative analysis of diagnostic x-ray spectra.

    PubMed

    Di Castro, E; Pani, R; Pellegrini, R; Bacci, C

    1984-09-01

    A method is introduced for the evaluation of x-ray spectra from x-ray machines operating in the range 50-100 kVp using a cadmium telluride (CdTe) detector with low detection efficiency. The pulse height distribution obtained with this kind of detector does not represent the true photon spectra owing to the presence of K-escape, Compton scattering, etc.; these effects were evaluated using a Monte Carlo method. A stripping procedure is described for implementation on a Univac 1100/82 computer. The validity of our method was finally tested by comparison with experimental results obtained with a Ge detector and with data from the literature; the results are in good agreement with published data. PMID:6483976

  12. A conceptual design of hard X-ray focal plane detector for simultaneous x-ray polarimetric, spectroscopic, and timing measurements

    NASA Astrophysics Data System (ADS)

    Vadawale, S. V.; Chattopadhyay, T.; Pendharkar, J.

    2012-09-01

    Importance of polarisation measurement of X-rays from celestial sources has been realized for long time. Such measurements can provide unique opportunity to study the behaviour of matter and radiation under extreme magnetic and gravitational fields. However sensitivity of the X-ray polarimeters has always been an issue and as a result no X-ray polarization measurement has been flown in last three decades. The situation is expected to change in near future with launch of GEMS, but these polarisation measurements will be limited to energies below 10KeV. On the other hand most of the X-ray sources are expected to have higher degree of polarisation at higher energies. With the advent of high energy focussing telescopes (e.g. NuSTAR, ASTRO-H), it is now possible to design a focal plane Compton polarimeter which can be sensitive upto 80KeV. However, X-ray polarisation measurement is extremely photon hungry. Therefore, a dedicated X-ray polarimeter always has lower sensitivity when compared to any other type of X-ray detector for equal collecting area and time. In this context, we explore a new design of hard X-ray focal plane detector which can provide simultaneous measurements of X-ray polarisation measurements along with high resolution X-ray spectroscopy as well as timing. This design employs a sandwich of a 0.5mm thick Si detector and 10mm thick plastic detector which is surrounded by a cylindrical array of scintillator detectors. Here we present results of detailed Geant4 simulations for estimating sensitivity of this configuration.

  13. CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

    NASA Astrophysics Data System (ADS)

    Zhang, Gen; Shi, Lixin; Selke, Matthias; Wang, Xuemei

    2011-06-01

    Cadmium telluride quantum dots (Cdte QDs) have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR) on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

  14. Oscillator detector

    SciTech Connect

    Potter, B.M.

    1980-05-13

    An alien liquid detector employs a monitoring element and an oscillatory electronic circuit for maintaining the temperature of the monitoring element substantially above ambient temperature. The output wave form, eg., frequency of oscillation or wave shape, of the oscillatory circuit depends upon the temperaturedependent electrical characteristic of the monitoring element. A predetermined change in the output waveform allows water to be discriminated from another liquid, eg., oil. Features of the invention employing two thermistors in two oscillatory circuits include positioning one thermistor for contact with water and the other thermistor above the oil-water interface to detect a layer of oil if present. Unique oscillatory circuit arrangements are shown that achieve effective thermistor action with an economy of parts and energizing power. These include an operational amplifier employed in an astable multivibrator circuit, a discrete transistor-powered tank circuit, and use of an integrated circuit chip.

  15. Ice detector

    NASA Technical Reports Server (NTRS)

    Weinstein, Leonard M. (Inventor)

    1988-01-01

    An ice detector is provided for the determination of the thickness of ice on the outer surface on an object (e.g., aircraft) independently of temperature or the composition of the ice. First capacitive gauge, second capacitive gauge, and temperature gauge are embedded in embedding material located within a hollowed out portion of the outer surface. This embedding material is flush with the outer surface to prevent undesirable drag. The first capacitive gauge, second capacitive gauge, and the temperature gauge are respectively connected to first capacitive measuring circuit, second capacitive measuring circuit, and temperature measuring circuit. The geometry of the first and second capacitive gauges is such that the ratio of the voltage outputs of the first and second capacitance measuring circuits is proportional to the thickness of ice, regardless of ice temperature or composition. This ratio is determined by offset and dividing circuit.

  16. Hardware simulator of Caliste-SO detectors for STIX instrument

    NASA Astrophysics Data System (ADS)

    Podgórski, P.; Ścisłowski, D.; Kowaliński, M.; Mrozek, T.; Steślicki, M.; Barylak, J.; Barylak, A.; Sylwester, J.; Krucker, S.; Hurford, G. J.; Arnold, N. G.; Orleański, P.; Meuris, A.; Limousin, O.; Gevin, O.; Grimm, O.; Etesi, L.; Hochmuth, N.; Battaglia, M.; Csillaghy, A.; Kienreich, I. W.; Veronig, A.; Bloomfield, D. Shaun; Byrne, M.; Massone, A. M.; Piana, M.; Giordano, S.; Skup, K. R.; Graczyk, R.; Michalska, M.; Nowosielski, W.; Cichocki, A.; Mosdorf, M.

    2013-10-01

    The Spectrometer Telescope for Imaging X-rays (STIX) is one of 10 instruments on-board Solar Orbiter mission of the European Space Agency (ESA) scheduled to be launched in 2017. STIX is aimed to provide imaging spectroscopy of solar thermal and non-thermal hard X-ray emissions from 4 keV to 150 keV using a Fourier-imaging technique. The instrument employs a set of tungsten grids in front of 32 pixelized CdTe detectors. These detectors are source of data collected and analyzed in real time by Instrument Data Processing Unit (IDPU). In order to support development and implementation of on-board algorithms a dedicated detector hardware simulator is designed and manufactured as a part of Electrical Ground Support Equipment (EGSE) for STIX instrument. Complementary to the hardware simulator is data analysis software which is used to generate input data and to analyze output data. The simulator will allow sending strictly defined data from all detectors' pixels at the input of the IDPU for further analysis of instrument response. Particular emphasis is given here to the simulator hardware design.

  17. (Cd,Mn)Te detectors for characterization of x-ray emissions generated during laser-driven fusion experiments

    SciTech Connect

    Cross,A.S.; Knauer, J. P.; Mycielski, A.; Kochanowska, D.; Wiktowska-Baran, M.; Jakiela, R.; Domagala, J.; Cui, Y.; James, R.; Sobolewski, R.

    2008-10-19

    We present our measurements of (Cd,Mn)Te photoconductive detectors (PCDs), fabricated for the goal of measuring both the temporal and spectral dependences of X-ray emissions generated from laser-illuminated targets during the inertial confinement fusion experiments. Our Cd{sub 1-x}Mn{sub x}Te (x = 0.05) single crystals, doped with V, were grown using a vertical Bridgman method and, subsequently, annealed in Cd for the highest resistivity ({approx}10{sup 10} {Omega}cm) and a good mobility-lifetime product ({approx}10{sup -3} cm{sup 2}/V). The 1-mm- and 2.3-mm-thick detectors were placed in the same housing as two 1-mm-thick diamond PCDs. All devices were pre-screened by a 7.6-mm-thick Be X-ray filter with a frequency cutoff of 1 keV. The incident shots from the OMEGA laser were 1-ns-long square pulses with energies ranging from 2.3 kJ to 22.6 kJ, and the PCDs were biased with 5000 V/cm. The response amplitudes and rise times of our (Cd,Mn)Te PCDs were comparable with the diamond detector performance, while the decay times were 4 to 10 times longer and in the 2-5 ns range. We observed two X-ray emission events separated by 1.24 ns. The first was identified as caused by heating of the target and creating a hot corona, while the second one was from the resulting compressed core. For comparison purposes, our testing was performed using {approx}1 keV X-ray photons, optimal for the diamond PCD. According to the presented simulations, however, at X-ray energies >10 keV diamond absorption efficiency drops to <50%, whereas for (Cd,Mn)Te the drop occurs at {approx}100 keV with near perfect, 100% absorption, up to 50 keV.

  18. Characterization of CdTe Growth on GaAs Using Different Etching Techniques

    NASA Astrophysics Data System (ADS)

    Bilgilisoy, E.; Özden, S.; Bakali, E.; Karakaya, M.; Selamet, Y.

    2015-09-01

    CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm-2 to 2 × 108 cm-2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm-2 to 7 × 107 cm-2 range for samples with thicknesses <2 μm.

  19. Effect of surface ligands on the optical properties of aqueous soluble CdTe quantum dots

    PubMed Central

    2012-01-01

    We investigate systematically the influence of the nature of thiol-type capping ligands on the optical and structural properties of highly luminescent CdTe quantum dots synthesized in aqueous media, comparing mercaptopropionic acid (MPA), thioglycolic acid (TGA), 1-thioglycerol (TGH), and glutathione (GSH). The growth rate, size distribution, and quantum yield strongly depend on the type of surface ligand used. While TGH binds too strongly to the nanocrystal surface inhibiting growth, the use of GSH results in the fastest growth kinetics. TGA and MPA show intermediate growth kinetics, but MPA yields a much lower initial size distribution than TGA. The obtained fluorescence quantum yields range from 38% to 73%. XPS studies unambiguously put into evidence the formation of a CdS shell on the CdTe core due to the thermal decomposition of the capping ligands. This shell is thicker when GSH is used as ligand, as compared with TGA ligands. PMID:23017183

  20. Photoluminescence Imaging of Large-Grain CdTe for Grain Boundary Characterization

    SciTech Connect

    Johnston, Steve; Allende Motz, Alyssa; Reese, Matthew O.; Burst, James M.; Metzger, Wyatt K.

    2015-06-14

    In this work, we use photoluminescence (PL) imaging to characterize CdTe grain boundary recombination. We use a silicon megapixel camera and green (532 nm) laser diodes for excitation. A microscope objective lens system is used for high spatial resolution and a field of view down to 190 um x 190 um. PL images of large-grain (5 to 50 um) CdTe samples show grain boundary and grain interior features that vary with processing conditions. PL images of samples in the as-deposited state show distinct dark grain boundaries that suggest high excess carrier recombination. A CdCl2 treatment leads to PL images with very little distinction at the grain boundaries, which illustrates the grain boundary passivation properties. Other process conditions are also shown, along with comparisons of PL images to high spatial resolution time-resolved PL carrier lifetime maps.

  1. First-principles DFT +G W study of oxygen-doped CdTe

    NASA Astrophysics Data System (ADS)

    Flores, Mauricio A.; Orellana, Walter; Menéndez-Proupin, Eduardo

    2016-05-01

    The role of oxygen doping in CdTe is addressed by first-principles calculations. Formation energies, charge transition levels, and quasiparticle defect states are calculated within the DFT+G W formalism. The formation of a new defect is identified, the (OTe-TeCd) complex.Thiscomplex is energetically favored over both isovalent (OTe) and interstitial oxygen (Oi), in the Te-rich limit. We find that the incorporation of oxygen passivates the harmful deep energy levels associated with (TeCd), suggesting an improvement in the efficiency of CdTe based solar cells. Substitutional (OCd) is only stable in the neutral charge state and undergoes a Jahn-Teller distortion. We also investigate the diffusion profiles of interstitial oxygen and find a low-energy diffusion barrier of only 0.14 eV between two structurally distinct interstitial sites.

  2. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Bi, Xianghong; Chen, Haibin; Wu, Jingshen

    2014-05-01

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  3. Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

    SciTech Connect

    Gessert, Timothy A.; Colegrove, Eric; Stafford, Brian; Gao, Wei; Sivananthan, Siva; Kuciauskas, Darius; Moutinho, Helio; Farrell, Stuart; Barnes, Teresa

    2015-06-14

    Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.

  4. A model for the growth of cdte by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nemirovsky, Y.; Goren, D.; Ruzin, A.

    1991-10-01

    A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380° C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.

  5. Growth and optical characterization of strained CdZnTe/ CdTe quantum wells

    NASA Astrophysics Data System (ADS)

    Reno, J. L.; Jones, E. D.

    1991-04-01

    We have grown strained Cd1-xZnxTe (x ≈ 0.2)/CdTe single and multiple quantum wells by molecular beam epitaxy. GaAs was used as a substrate. The well widths were systematically increased until the critical thickness was exceeded. Low-temperature (liquid helium) photoluminescence (PL) spectroscopy was used to characterize the films. Two prominent PL peaks were observed: one arising from the quantum well and the other from the barrier material. The energy of the quantum well luminescence is consistent with theory when strain is included. The critical layer thickness for the CdTe quantum wells was found to be between 150 and 175 å, in agreement with the model of Matthews and Blakeslee.

  6. CdTe quantum dot as a fluorescence probe for vitamin B12 in dosage form

    NASA Astrophysics Data System (ADS)

    Vaishnavi, E.; Renganathan, R.

    2013-11-01

    We here report the CdTe quantum dot (CdTe QDs)-based sensor for probing vitamin B12 derivatives in aqueous solution. In this paper, simple and sensitive fluorescence quenching measurements has been employed. The Stern-Volmer constant (KSV), quenching rate constant (kq) and binding constant (K) were rationalized from fluorescence quenching measurement. Furthermore, the fluorescence resonance energy transfer (FRET) mechanism was discussed. This method was applicable over the concentration ranging from 1 to 14 μg/mL (VB12) with correlation coefficient of 0.993. The limit of detection (LOD) of VB12 was found to be 0.15 μg/mL. Moreover, the present approach opens a simple pathway for developing cost-effective, sensitive and selective QD-based fluorescence sensors/probes for biologically significant VB12 in pharmaceutical sample with mean recoveries in the range of 100-102.1%.

  7. Induced recrystallization of CdTe thin films deposited by close-spaced sublimation

    SciTech Connect

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L.; Mayo, B.

    1999-03-01

    We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl{sub 2} treatment at 350&hthinsp;{degree}C and completely recrystallized after the same treatment at 400&hthinsp;{degree}C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl{sub 2} are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures. {copyright} {ital 1999 American Institute of Physics.}

  8. Strongly confining bare core CdTe quantum dots in polymeric microdisk resonators

    SciTech Connect

    Flatae, Assegid Grossmann, Tobias; Beck, Torsten; Wiegele, Sarah; Kalt, Heinz

    2014-01-01

    We report on a simple route to the efficient coupling of optical emission from strongly confining bare core CdTe quantum dots (QDs) to the eigenmodes of a micro-resonator. The quantum emitters are embedded into QD/polymer sandwich microdisk cavities. This prevents photo-oxidation and yields the high dot concentration necessary to overcome Auger enhanced surface trapping of carriers. In combination with the very high cavity Q-factors, interaction of the QDs with the cavity modes in the weak coupling regime is readily observed. Under nanosecond pulsed excitation the CdTe QDs in the microdisks show lasing with a threshold energy as low as 0.33 μJ.

  9. Investigation of the origin of deep levels in CdTe doped with Bi

    SciTech Connect

    Saucedo, E.; Franc, J.; Elhadidy, H.; Horodysky, P.; Ruiz, C. M.; Bermudez, V.; Sochinskii, N. V.

    2008-05-01

    Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 10{sup 17}-10{sup 19} at./cm{sup 3}. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

  10. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    SciTech Connect

    Guo, Da; Brinkman, Daniel; Fang, Tian; Akis, Richard; Sankin, Igor; Vasileska, Dragica; Ringhofer, Christian

    2015-09-04

    In this work, we report on development of one-dimensional (1D) finite-difference and two-dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu-related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in response to the evolution of associated acceptor and donor states. To achieve such capability, the simu-lators solve reaction-diffusion equations for the defect states in time-space domain self-consistently with the free carrier transport. Re-sults of 1-D and 2-D simulations have been compared to verify the accuracy of solutions.

  11. Identification of critical stacking faults in thin-film CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Yoo, Su-Hyun; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.; Walsh, Aron

    2014-08-01

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl2 is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  12. Heteroepitaxy of CdTe(1 1 1)B on Si(1 1 1) : As

    NASA Astrophysics Data System (ADS)

    Schick, H.; Bensing, F.; Hilpert, U.; Richter, U.; Hansen, L.; Wagner, J.; Wagner, V.; Geurts, J.; Waag, A.; Landwehr, G.

    2000-06-01

    In order to improve the structural quality of CdTe/Si composite substrates, we have investigated the MBE growth mechanisms of CdTe(1 1 1) onto planar and vicinal arsenic-passivated Si(1 1 1) surfaces. The films were characterized by in situ RHEED, X-ray diffraction, Raman spectroscopy, photoluminescence, secondary electron microscopy, transmission electron microscopy and atomic force microscopy. Rocking curves had peaks narrower than 100 arcsec at a layer thickness of only 1-2 μm. BeTe buffer layers did not show a dominant effect, whereas the twin content decreased drastically when misoriented substrates were used. Efficient twin suppression can be obtained by realizing an interface step alignment between substrate and epitaxial CdTe film.

  13. Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

    SciTech Connect

    Rao, N. Madhusudhana; Kaleemulla, S.; Begam, M. Rigana

    2014-04-24

    Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

  14. CdTe and ZnTe metal interface formation and Fermi-level pinning

    NASA Technical Reports Server (NTRS)

    Wahi, A. K.; Carey, G. P.; Chiang, T. T.; Lindau, I.; Spicer, W. E.

    1989-01-01

    Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

  15. Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

    2004-01-01

    In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

  16. Identification of critical stacking faults in thin-film CdTe solar cells

    SciTech Connect

    Yoo, Su-Hyun; Walsh, Aron; Butler, Keith T.; Soon, Aloysius; Abbas, Ali; Walls, John M.

    2014-08-11

    Cadmium telluride (CdTe) is a p-type semiconductor used in thin-film solar cells. To achieve high light-to-electricity conversion, annealing in the presence of CdCl{sub 2} is essential, but the underlying mechanism is still under debate. Recent evidence suggests that a reduction in the high density of stacking faults in the CdTe grains is a key process that occurs during the chemical treatment. A range of stacking faults, including intrinsic, extrinsic, and twin boundary, are computationally investigated to identify the extended defects that limit performance. The low-energy faults are found to be electrically benign, while a number of higher energy faults, consistent with atomic-resolution micrographs, are predicted to be hole traps with fluctuations in the local electrostatic potential. It is expected that stacking faults will also be important for other thin-film photovoltaic technologies.

  17. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect

    Zhang, Lei Chen, Haibin E-mail: mejswu@ust.hk; Wu, Jingshen E-mail: mejswu@ust.hk; Bi, Xianghong

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  18. High efficiency solution processed sintered CdTe nanocrystal solar cells: the role of interfaces.

    PubMed

    Panthani, Matthew G; Kurley, J Matthew; Crisp, Ryan W; Dietz, Travis C; Ezzyat, Taha; Luther, Joseph M; Talapin, Dmitri V

    2014-02-12

    Solution processing of photovoltaic semiconducting layers offers the potential for drastic cost reduction through improved materials utilization and high device throughput. One compelling solution-based processing strategy utilizes semiconductor layers produced by sintering nanocrystals into large-grain semiconductors at relatively low temperatures. Using n-ZnO/p-CdTe as a model system, we fabricate sintered CdTe nanocrystal solar cells processed at 350 °C with power conversion efficiencies (PCE) as high as 12.3%. JSC of over 25 mA cm(-2) are achieved, which are comparable or higher than those achieved using traditional, close-space sublimated CdTe. We find that the VOC can be substantially increased by applying forward bias for short periods of time. Capacitance measurements as well as intensity- and temperature-dependent analysis indicate that the increased VOC is likely due to relaxation of an energetic barrier at the ITO/CdTe interface. PMID:24364381

  19. Grain-boundary-enhanced carrier collection in CdTe solar cells.

    PubMed

    Li, Chen; Wu, Yelong; Poplawsky, Jonathan; Pennycook, Timothy J; Paudel, Naba; Yin, Wanjian; Haigh, Sarah J; Oxley, Mark P; Lupini, Andrew R; Al-Jassim, Mowafak; Pennycook, Stephen J; Yan, Yanfa

    2014-04-18

    When CdTe solar cells are doped with Cl, the grain boundaries no longer act as recombination centers but actively contribute to carrier collection efficiency. The physical origin of this remarkable effect has been determined through a combination of aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles theory. Cl substitutes for a large proportion of the Te atoms within a few unit cells of the grain boundaries. Density functional calculations reveal the mechanism, and further indicate the grain boundaries are inverted to n type, establishing local p-n junctions which assist electron-hole pair separation. The mechanism is electrostatic, and hence independent of the geometry of the boundary, thereby explaining the universally high collection efficiency of Cl-doped CdTe solar cells. PMID:24785058

  20. Cyclodextrin capped CdTe quantum dots as versatile fluorescence sensors for nitrophenol isomers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhixing; Zhou, Jie; Liu, Yun; Tang, Jian; Tang, Weihua

    2015-11-01

    Cyclodextrin (CD) capped CdTe quantum dots (QDs) were prepared with uniform dimension (average diameter ~5 nm) and high quantum yield (ca. 65%). By taking advantage of the inclusion complexation of CD, β-CD-CdTe QDs exhibited strong fluorescence quenching in a linear relationship with the concentration of o-, m- and p-nitrophenol in the range of 20-100 μM. The detection limit reached 0.05 μM for o-/p-nitrophenol and 0.3 μM for m-nitrophenol. The fluorescence decay study revealed the stabilization effect of CD covering on CdTe QDs and fine-tuning of the fluorescence for selective ultrasensitive detection of nitrophenol isomers.Cyclodextrin (CD) capped CdTe quantum dots (QDs) were prepared with uniform dimension (average diameter ~5 nm) and high quantum yield (ca. 65%). By taking advantage of the inclusion complexation of CD, β-CD-CdTe QDs exhibited strong fluorescence quenching in a linear relationship with the concentration of o-, m- and p-nitrophenol in the range of 20-100 μM. The detection limit reached 0.05 μM for o-/p-nitrophenol and 0.3 μM for m-nitrophenol. The fluorescence decay study revealed the stabilization effect of CD covering on CdTe QDs and fine-tuning of the fluorescence for selective ultrasensitive detection of nitrophenol isomers. Electronic supplementary information (ESI) available: Experimental procedure and characterization for new materials. See DOI: 10.1039/c5nr06073g

  1. Advanced Research Deposition System (ARDS) for processing CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Barricklow, Keegan Corey

    CdTe solar cells have been commercialized at the Gigawatt/year level. The development of volume manufacturing processes for next generation CdTe photovoltaics (PV) with higher efficiencies requires research systems with flexibility, scalability, repeatability and automation. The Advanced Research Deposition Systems (ARDS) developed by the Materials Engineering Laboratory (MEL) provides such a platform for the investigation of materials and manufacturing processes necessary to produce the next generation of CdTe PV. Limited by previous research systems, the ARDS was developed to provide process and hardware flexibility, accommodating advanced processing techniques, and capable of producing device quality films. The ARDS is a unique, in-line process tool with nine processing stations. The system was designed, built and assembled at the Materials Engineering Laboratory. Final assembly, startup, characterization and process development are the focus of this research. Many technical challenges encountered during the startup of the ARDS were addressed in this research. In this study, several hardware modifications needed for the reliable operation of the ARDS were designed, constructed and successfully incorporated into the ARDS. The effect of process condition on film properties for each process step was quantified. Process development to achieve 12% efficient baseline solar cell required investigation of discrete processing steps, troubleshooting process variation, and developing performance correlations. Subsequent to this research, many advances have been demonstrated with the ARDS. The ARDS consistently produces devices of 12% +/-.5% by the process of record (POR). The champion cell produced to date utilizing the ARDS has an efficiency of 16.2% on low cost commercial sodalime glass and utilizes advanced films. The ARDS has enabled investigation of advanced concepts for processing CdTe devices including, Plasma Cleaning, Plasma Enhanced Closed Space Sublimation

  2. Angle-resolved photoemission studies of the CdTe(110) surface

    NASA Astrophysics Data System (ADS)

    Qu, H.; Kanski, J.; Nilsson, P. O.; Karlsson, U. O.

    1991-06-01

    The electronic structure of the CdTe(110) surface has been studied with angle-resolved photoelectron spectroscopy using synchrotron radiation. An empirical tight-binding linar combination of atomic orbitals band structure has been derived, based on normal-emission spectra. Several, previously unreported, surface-related states have been observed in off-normal emission, and their dispersions have been mapped along symmetry directions of the surface Brillouin zone.

  3. Diamond detector in absorbed dose measurements in high-energy linear accelerator photon and electron beams.

    PubMed

    Ravichandran, Ramamoorthy; Binukumar, John Pichy; Al Amri, Iqbal; Davis, Cheriyathmanjiyil Antony

    2016-01-01

    Diamond detectors (DD) are preferred in small field dosimetry of radiation beams because of small dose profile penumbras, better spatial resolution, and tissue-equivalent properties. We investigated a commercially available 'microdiamond' detector in realizing absorbed dose from first principles. A microdiamond detector, type TM 60019 with tandem electrometer is used to measure absorbed doses in water, nylon, and PMMA phantoms. With sensitive volume 0.004 mm3, radius 1.1mm, thickness 1 x10(-3) mm, the nominal response is 1 nC/Gy. It is assumed that the diamond detector could collect total electric charge (nC) developed during irradiation at 0 V bias. We found that dose rate effect is less than 0.7% for changing dose rate by 500 MU/min. The reproducibility in obtaining readings with diamond detector is found to be ± 0.17% (1 SD) (n = 11). The measured absorbed doses for 6 MV and 15 MV photons arrived at using mass energy absorption coefficients and stop-ping power ratios compared well with Nd, water calibrated ion chamber measured absorbed doses within 3% in water, PMMA, and nylon media. The calibration factor obtained for diamond detector confirmed response variation is due to sensitivity due to difference in manufacturing process. For electron beams, we had to apply ratio of electron densities of water to carbon. Our results qualify diamond dosimeter as a transfer standard, based on long-term stability and reproducibility. Based on micro-dimensions, we recommend these detectors for pretreatment dose verifications in small field irradiations like stereotactic treatments with image guidance. PMID:27074452

  4. Modeling the defect distribution and degradation of CdTe ultrathin films

    NASA Astrophysics Data System (ADS)

    Gorji, Nima E.

    2014-12-01

    The defect distribution across an ultrathin film CdTe layer of a CdS/CdTe solar cell is modelled by solving the balance equation in steady state. The degradation of the device parameters due to the induced defects during ion implantation is considered where the degradation rate is accelerated if the defect distribution is considerable. The defect concentration is maximum at the surface of the CdTe layer where implantation is applied and it is minimum at the junction with the CdS layer. It shows that ultrathin devices degrade faster if the defect concentration is high at the junction rather than the back region (CdTe/Metal). Since the front and back contacts of the device are close in ultrathin films and the electric field is strong to drive the defects into the junction, the p-doping process might be precisely controlled during ion implantation. The modeling results presented here are in agreement with the few available experimental reports in literature about the degradation and defect configuration of the ultrathin CdTe films.

  5. S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

    DOE PAGESBeta

    Li, C.; Poplawsky, J.; Paudel, N.; Pennycook, T. J.; Haigh, S. J.; Al-Jassim, M. M.; Yan, Y.; Pennycook, S. J.

    2014-09-19

    At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shiftmore » of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.« less

  6. S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

    SciTech Connect

    Li, C.; Poplawsky, J.; Paudel, N.; Pennycook, T. J.; Haigh, S. J.; Al-Jassim, M. M.; Yan, Y.; Pennycook, S. J.

    2014-09-19

    At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images. Moreover, when enough S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. Cl segregation has also been found at the interface. STEM electron-beam-induced current (EBIC) shows that the p-n junction occurs a few nm into the CdTe grains, which is consistent with the S diffusion range we observe. The shift of the p-n junction suggests a buried homo-junction which would help reduce non-radiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as well as Te and Cl diffusion in CdS GBs.

  7. Luminescent CdTe and CdSe semiconductor nanocrystals: preparation, optical properties and applications.

    PubMed

    Wang, Ying

    2008-03-01

    The novel optical and electrical properties of luminescent semiconductor nanocrystals are appealing for ultrasensitive multiplexing and multicolor applications in a variety of fields, such as biotechnology, nanoscale electronics, and opto-electronics. Luminescent CdSe and CdTe nanocrystals are archetypes for this dynamic research area and have gained interest from diverse research communities. In this review, we first describe the advances in preparation of size- and shape-controlled CdSe and CdTe semiconductor nanocrystals with the organometallic approach. This article gives particular focus to water soluble nanocrystals due to the increasing interest of using semiconductor nanocrystals for biological applications. Post-synthetic methods to obtain water solubility, the direct synthesis routes in aqueous medium, and the strategies to improve the photoluminescence efficiency in both organic and aqueous phase are discussed. The shape evolution in aqueous medium via self-organization of preformed nanoparticles is a versatile and powerful method for production of nanocrystals with different geometries, and some recent advances in this field are presented with a qualitative discussion on the mechanism. Some examples of CdSe and CdTe nanocrystals that have been applied successfully to problems in biosensing and bioimaging are introduced, which may profoundly impact biological and biomedical research. Finally we present the research on the use of luminescent semiconductor nanocrystals for construction of light emitting diodes, solar cells, and chemical sensors, which demonstrate that they are promising building blocks for next generation electronics. PMID:18468108

  8. Signal-on electrochemiluminescence of biofunctional CdTe quantum dots for biosensing of organophosphate pesticides.

    PubMed

    Liang, Han; Song, Dandan; Gong, Jingming

    2014-03-15

    A new, highly sensitive and selective ECL assay biosensor based on target induced signal on has been developed for the detection of organophosphate pesticides (OPs), whereby the smart integration of graphene nanosheets (GNs), CdTe quantum dots (CdTe QDs), and acetylcholinesterase (AChE) enzymatic reaction yields a biofunctional AChE-GNs-QDs hybrid as cathodic ECL emitters for OPs sensing. The electrochemically synthesized GNs were selected as a supporting material to anchor CdTe QDs, exhibiting a significantly amplified ECL signal of QDs. On the basis of the effect of OPs on the ECL signal of AChE-QDs-GNs modified glassy carbon electrode (GCE), a highly sensitive GNs-anchored-QDs-based signal-on ECL biosensor was developed for sensing OPs, combined with the enzymatic reactions and the dissolved oxygen as coreactant. The conditions for OPs detection were optimized by using methyl parathion (MP) as a model OP compound. Under the optimized experimental conditions, such a newly designed system shows remarkably improved sensitivity and selectivity for the sensing of OPs. The detection limit was found to be as low as about 0.06 ng mL(-1) (S/N=3). Toward the goal for practical applications, the resulting sensor was further evaluated by monitoring MP in spiked vegetable samples, showing fine applicability for the detection of MP in real samples. PMID:24184599

  9. Electron and hole drift mobility measurements on thin film CdTe solar cells

    SciTech Connect

    Long, Qi; Dinca, Steluta A.; Schiff, E. A.; Yu, Ming; Theil, Jeremy

    2014-07-28

    We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10{sup −1}–10{sup 0} cm{sup 2}/V s, and holes are in the range of 10{sup 0}–10{sup 1} cm{sup 2}/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl{sub 2}; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.

  10. Probing the interactions of CdTe quantum dots with pseudorabies virus

    PubMed Central

    Du, Ting; Cai, Kaimei; Han, Heyou; Fang, Liurong; Liang, Jiangong; Xiao, Shaobo

    2015-01-01

    Quantum dots (QDs) have become one of the most promising luminescent materials for tracking viral infection in living cells. However, several issues regarding how QDs interact with the virus remain unresolved. Herein, the effects of Glutathione (GSH) capped CdTe QDs on virus were investigated by using pseudorabies virus (PRV) as a model. One-step growth curve and fluorescence colocalization analyses indicate that CdTe QDs inhibit PRV multiplication in the early stage of virus replication cycle by suppressing the invasion, but have no significant effect on the PRV penetration. Fluorescence spectrum analysis indicates that the size of QDs is reduced gradually after the addition of PRV within 30 min. Release of Cd2+ was detected during the interaction of QDs and PRV, resulting in a decreased number of viruses which can infect cells. Further Raman spectra and Circular Dichroism (CD) spectroscopy analyses reveal that the structure of viral surface proteins is altered by CdTe QDs adsorbed on the virus surface, leading to the inhibition of virus replication. This study facilitates an in-depth understanding of the pathogenic mechanism of viruses and provides a basis for QDs-labeled virus research. PMID:26552937

  11. Thin-film CdTe photovoltaic cells by laser deposition and rf sputtering

    NASA Astrophysics Data System (ADS)

    Compaan, A.; Bohn, R. G.; Bhat, A.; Tabory, C.; Shao, M.; Li, Y.; Savage, M. E.; Tsien, L.

    1992-12-01

    Laser-driven physical vapor deposition (LDPVD) and radio-frequency (rf) sputtering have been used to fabricate thin-film solar cells on SnO2-coated glass substrates. The laser-ablation process readily permits the use of several target materials in the same vacuum chamber and complete solar cell structures have been fabricated on SnO2-coated glass using LDPVD for the CdS, CdTe, and CdCl2. To date the best devices (˜9% AM1.5) have been obtained after a post-deposition anneal at 400 °C. In addition, cells have been fabricated with the combination of LDPVD CdS, rf-sputtered CdTe, and LDPVD CdCl2. The performance of these cells indicates considerable promise for the potential of rf sputtering for CdTe photovoltaic devices. The physical mechanisms of LDPVD have been studied by transient optical spectroscopy on the laser ablation plume. These measurements have shown that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a large fraction which is highly excited internally (≥6 eV) and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. Quality of as-grown and annealed films has been analyzed by optical absorption. Raman scattering, photoluminescence, electrical conductivity, Hall effect, x-ray diffraction, and SEM/EDS.

  12. Individual losses in thin-film CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Tavakolian, Hossein; Sites, James R.

    Thin-film polycrystalline CdTe solar cells have been analyzed using current-voltage, reflection, quantum efficiency, and capacitance measurements. The objective is to quantify the individual current and voltage losses in recent cells from different sources. Compared to an optimum photocurrent density of 30.5 mA/sq cm, they typically lose 2 mA/sq cm to reflection, 2-3 to uncollected CdTe carriers, and 2-6 to window-layer absorption. Voltage loss at maximum power is on the order of 200 mV because of the polycrystallinity, 100 mV due to light-dark differences in forward current, and 50 mV resulting from series resistance. Individual voltage loss values vary considerably among samples. The capacitance measurement implies that a significant fraction of the CdTe is a highly compensated i-layer and that the extraneous bandgap state density is above 10 to the 11th e/V/sq cm under operating conditions.

  13. Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint

    SciTech Connect

    Gessert, T. A.; Dhere, R. G.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Bergeson, J. D.

    2011-07-01

    We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.

  14. CuInSe[sub 2] and CdTe thin films for photovoltaic applications''

    SciTech Connect

    Attar, G.; Bhethanobolta, D.P.; Dugan, K.; Karthikeyan, S.; Kazi, M.; Killian, J.L.; Muthaiah, A.B.; Nierman, D.; Oman, D.M.; Swaminathan, R.; Zafar, S.A.; Ferekides, C.S.; Morel, D.L. )

    1994-06-30

    We are developing processing techniques for CuInSe[sub 2] that are manufacturing-friendly due to relaxed controls on deposition conditions. We routinely achieve J[sub sc]'s in the range 35--45+ mA/cm[sup 2], FF's of 0.55--0.63, and have recently achieved 410 mV in devices without advanced Ga alloying techniques. Our progress and analysis suggests that these processing techniques can achieve state-of-the-art efficiencies. We are also developing an understanding of the complex underlying device mechanisms and their correlation to processing. We propose that a multi-junction classical model which includes space charge recombination can adequately explain device performance and help guide development efforts. The effect of the substrate temperature on the performance of CdTe solar cells prepared by the close spaced sublimation (CSS) process is being investigated. Significant progress has been made and the maximum open-circuit voltage, short-circuit current, and fill factor obtained are 840--860 mV, 22+ mA/cm[sup 2], and 69--70% respectively. The extend of interface reaction between the CdTe and CdS layers appears to be dependent on the substrate temperature. Other process parameters such as the total pressure and spacing are of equal importance in obtaining dense CdTe films. Stability studies are also underway in order to determine whether any degradation mechanisms exist and identify their origins.

  15. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

    NASA Astrophysics Data System (ADS)

    Dai, Shujun; Wang, Tao; Liu, Huimin; He, Yihui; Jie, Wanqi

    2016-06-01

    A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), {{Te}}_{{Cd}}^{2 + } - {{V}}_{{Cd}}^{2 - } (D complex), {{In}}_{{Cd}}^{ + } - {{V}}_{{Cd}}^{ - } (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a {{V}}_{{Cd}}^{2 - } , TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

  16. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

    SciTech Connect

    Simonds, Brian J.; Kheraj, Vipul; Palekis, Vasilios; Ferekides, Christos; Scarpulla, Michael A.

    2015-06-14

    Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

  17. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    SciTech Connect

    Ullal, H. S.; von Roedern, B.

    2007-09-01

    We report here on the major commercialization aspects of thin-film photovoltaic (PV) technologies based on CIGS and CdTe (a-Si and thin-Si are also reported for completeness on the status of thin-film PV). Worldwide silicon (Si) based PV technologies continues to dominate at more than 94% of the market share, with the share of thin-film PV at less than 6%. However, the market share for thin-film PV in the United States continues to grow rapidly over the past several years and in CY 2006, they had a substantial contribution of about 44%, compared to less than 10% in CY 2003. In CY 2007, thin-film PV market share is expected to surpass that of Si technology in the United States. Worldwide estimated projections for CY 2010 are that thin-film PV production capacity will be more than 3700 MW. A 40-MW thin-film CdTe solar field is currently being installed in Saxony, Germany, and will be completed in early CY 2009. The total project cost is Euro 130 million, which equates to an installed PV system price of Euro 3.25/-watt averaged over the entire solar project. This is the lowest price for any installed PV system in the world today. Critical research, development, and technology issues for thin-film CIGS and CdTe are also elucidated in this paper.

  18. First-principles DFT+GW study of oxygen doped CdTe

    NASA Astrophysics Data System (ADS)

    Orellana, Walter; Flores, Mauricio A.; Menéndez-Proupin, Eduardo

    The role of oxygen doping in CdTe is addressed by first-principles calculations. Formation energies, charge transition levels and quasiparticle defect states are calculated within the DFT+GW formalism. The formation of a new defect is identified, the (OTe -TeCd) complex. This complex is energetically favored over both isovalent (OTe) and interstitial oxygen (Oi). We find that incorporation of oxygen passivates the harmful deep energy levels derived from Te antisites, suggesting an improvement in the efficiency of CdTe based solar cells. Our calculations indicate that both (OTe) and (Oi) have low formation energies. Moreover, (OCd) is only stable in the neutral charge state and undergoes a Jahn-Teller distortion. The (VCd - OTe) complex is found to be a shallow acceptor with a high formation energy. We also report an oxygen-related interstitial defect, which plays a key role in the diffusion mechanism of oxygen in CdTe. Support by FONDECYT Grant No. 1130437 is acknowledged. Powered@NLHPC: This research was partially supported by the supercomputing infrastructure of the NLHPC (ECM-02).

  19. Optical absorption enhancement of CdTe nanostructures by low-energy nitrogen ion bombardment

    NASA Astrophysics Data System (ADS)

    Akbarnejad, E.; Ghoranneviss, M.; Mohajerzadeh, S.; Hantehzadeh, M. R.; Asl Soleimani, E.

    2016-02-01

    In this paper we present the fabrication of cadmium telluride (CdTe) nanostructures by means of RF magnetron sputtering followed by low-energy ion implantation and post-thermal treatment. We have thoroughly studied the structural, optical, and morphological properties of these nanostructures. The effects of nitrogen ion bombardment on the structural parameters of CdTe nanostructures such as crystal size, microstrain, and dislocation density have been examined. From x-ray diffractometer (XRD) analysis it could be deduced that N+ ion fluence and annealing treatment helps to form (3 0 0) orientation in the crystalline structure of cadmium-telluride films. Fluctuations in optical properties like the optical band gap and absorption coefficient as a function of N+ ion fluences have been observed. The annealing of the sample irradiated by a dose of 1018 ions cm-2 has led to great enhancement in the optical absorption over a wide range of wavelengths with a thickness of 250 nm. The enhanced absorption is significantly higher than the observed value in the original CdTe layer with a thickness of 3 μm. Surface properties such as structure, grain size and roughness are noticeably affected by varying the nitrogen fluences. It is speculated that nitrogen bombardment and post-annealing treatment results in a smaller optical band gap, which in turn leads to higher absorption. Nitrogen bombardment is found to be a promising method to increase efficiency of thin film solar cells.

  20. Review on first-principles study of defect properties of CdTe as a solar cell absorber

    NASA Astrophysics Data System (ADS)

    Yang, Ji-Hui; Yin, Wan-Jian; Park, Ji-Sang; Ma, Jie; Wei, Su-Huai

    2016-08-01

    CdTe is one of the leading materials for high-efficiency, low-cost, and thin-film solar cells. In this work, we review the recent first-principles study of defect properties of CdTe and present that: (1) When only intrinsic defects are present, p-type doping in CdTe is weak and the hole density is low due to the relatively deep acceptor levels of Cd vacancy. (2) When only intrinsic defects present, the dominant non-radiative recombination center in p-type CdTe is T{e}Cd2+, which limits the carrier lifetime to be around 200 ns. (3) Extrinsic p-type doping in CdTe by replacing Te with group V elements generally will be limited by the formation of AX centers. This could be overcome through a non-equilibrium cooling process and the hole density can achieve {10}17 {{{cm}}}-3. However, the long-term stability will be a challenging issue. (4) Extrinsic p-type doping by replacing Cd with alkaline group I elements is limited by alkaline interstitials and a non-equilibrium cooling process can efficiently enhance the hole density to the order of {10}17 {{{cm}}}-3. (5) Cu and Cl treatments are discussed. In bulk CdTe, Cu can enhance p-type doping, but Cl is found to be unsuitable for this. Both Cu and Cl show segregation at grain boundaries, especially at those with Te–Te wrong bonds. (6) External impurities are usually incorporated by diffusion. Therefore, the diffusion processes in CdTe are investigated. We find that cation interstitial (Nai, Cui) diffusion follows relatively simple diffusion paths, but anion diffusion (Cli, Pi) follows more complicated paths due to the degenerated defect wavefunctions.

  1. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    SciTech Connect

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto; Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya; Othaman, Zulkafli

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  2. "Phoswich Wall": A charged-particle detector array for inverse-kinematic reactions with the Gretina/GRETA γ-ray arrays

    NASA Astrophysics Data System (ADS)

    Sarantites, D. G.; Reviol, W.; Elson, J. M.; Kinnison, J. E.; Izzo, C. J.; Manfredi, J.; Liu, J.; Jung, H. S.; Goerres, J.

    2015-08-01

    A high-efficiency, forward-hemisphere detector system for light charged particles and low-Z heavy ions, as obtained in an accelerator experiment, is described. It consists of four 8×8 pixel multianode photomultiplier tubes with 2.2-mm thick CsI(Tl) and 12 -μm thick fast-plastic scintillation detectors. Its phoswich structure allows individual Z resolution for 1H, 4He, 7Li, 4He+4He, 9Be, 11B, 12C, and 14N ions, which are target-like fragments detected in strongly inverse kinematics. The device design has been optimized for use with a 4π γ-ray array, and the main applications are transfer reactions and Coulomb excitation. A high-angular resolution for the detection of the target-like fragments is achieved which permits angular distributions to be measured in the rest frame of the projectile-like fragment with a resolution of ~ 2 °.

  3. A prototype high-purity germanium detector system with fast photon-counting circuitry for medical imaging.

    PubMed

    Hasegawa, B H; Stebler, B; Rutt, B K; Martinez, A; Gingold, E L; Barker, C S; Faulkner, K G; Cann, C E; Boyd, D P

    1991-01-01

    A data-acquisition system designed for x-ray medical imaging utilizes a segmented high-purity germanium (HPGe) detector array with 2-mm wide and 6-mm thick elements. The detectors are contained within a liquid-nitrogen cryostat designed to minimize heat losses. The 50-ns pulse-shaping time of the preamplifier electronics is selected as the shortest time constant compatible with the 50-ns charge collection time of the detector. This provides the detection system with the fastest count-rate capabilities and immunity from microphonics, with moderate energy resolution performance. A theoretical analysis of the preamplifier electronics shows that its noise performance is limited primarily by its input capacitance, and is independent of detector leakage current up to approximately 100 nA. The system experimentally demonstrates count rates exceeding 1 million counts per second per element with an energy resolution of 7 keV for the 60-keV gamma ray photon from 241Am. The results demonstrate the performance of a data acquisition system utilizing HPGe detector systems which would be suitable for dual-energy imaging as well as systems offering simultaneous x-ray transmission and radionuclide emission imaging. PMID:1961152

  4. A New Neutron Time-of-Flight Detector for DT Yield and Ion-Temperature Measurements on OMEGA

    NASA Astrophysics Data System (ADS)

    Glebov, V. Yu.; Forrest, C. J.; Knauer, J. P.; Regan, S. P.; Sangster, T. C.; Stoeckl, C.

    2015-11-01

    A new neutron time-of-flight (nTOF) detector for DT yield and ion-temperature measurements in DT implosions on the OMEGA Laser System was designed, fabricated, tested, and calibrated. The goal of this detector is to provide a second line of sight for DT yield and ion-temperature measurements in the 1 ×1012 to 1014 yield range. The nTOF detector consists of a 40-mm-diam, 20-mm-thick BC-422Q(1%) scintillator coupled with a one-stage Photek PMT-140 photomultiplier tube. To avoid PMT saturation at high yields a neutral density filter ND1 is inserted between the scintillator and PMT. Both the scintillator and PMT are shielded from hard x rays by 5 mm of lead on all sides and 10 mm in the direction of the target. The nTOF detector is located at 15.8 m from target chamber center in the OMEGA Target Bay. The design details and calibration results of this nTOF detector in DT implosions on OMEGA will be presented. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  5. Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 3, May 1-July 31, 1981

    SciTech Connect

    Bube, R.H.

    1981-01-01

    Preparation of the hot-wall vacuum deposition system nears completion and the first trial evaporation should take place in mid October. A UTI 100C Mass Analyzer with a 1 to 300 AMU capability has been ordered for the system. Preliminary tests indicate good temperature tracking between the furnace core and the CdTe source itself. Homojunction cells prepared by HWVE deposition of n-CdTe on p-CdTe substrates in October 1980 show no significant change in dark or light properties after open-circuit storage for the next 9 months. CdTe single crystal boules have been grown with P, As and Cs impurity. For P impurity it appears from our data that the segregation coefficient is close to unity, that the value of hole density is controlled by the P and not by some unknown background acceptor, and that growth with excess Cd gives slightly higher values of hole density than growth with excess Te. CdTe:As crystals appear similar to CdTe:P crystals.

  6. An investigation of a noninvasive detector system for [oxygen-15]water blood flow studies in positron emission tomography

    NASA Astrophysics Data System (ADS)

    Aykac, Mehmet

    Imaging studies that use positron emission tomography (PET) with [O-15]water have been central for the assessment of neurophysiological activity. Estimation of regional cerebral blood flow (rCBF) for accurate and quantitative mapping of brain function requires measurement of the post-injection arterial time course of [O-15]water. The overall purpose of this work is to design and build a small inexpensive single ring PET tomograph that can be placed around a subject's neck or wrist to noninvasively measure the arterial radioactivity input function. The design and construction of a noninvasive blood sampling system required modeling of the time varying radioactivity distribution in the neck and wrist, examination of the light collection properties of various reflectors and scintillator surface treatment, and an investigation of scintillator size and PMT coupling. Neural network method was also used in order to estimate phenomenologically the light collection efficiency of the coincidence detectors. Two detector modules were designed and fabricated using 0.8mm x 10mm x 20mm BGO crystals wrapped with Teflon reflector of 0.1 mm thickness and coupled to R5900-L16 PSPMTs (Hamamatsu, Japan). A coincidence detector system with 184mm ring diameter was simulated by Monte Carlo methods and experimental data acquired by rotating the radioactive phantoms in front of two detector modules operated in coincidence. Detector linearity was verified up to 125mCi/ml radioactivity concentration. The sensitivity of the system was extrapolated to be 1600 (counts/sec)/(mCi/ml) for 578 total detectors of an equivalent ring tomograph. The spatial resolution of the system was measured <=2mm. The system responded linearly to bolus injections between 50mCi and 375mCi. Due to the small field of view (7mm), the system was not tested in the clinical operation. Inter-crystal scattering of the annihilation photons and transmission of scintillation photons limit energy resolution. Improvements in

  7. Detector simulation needs for detector designers

    SciTech Connect

    Hanson, G.G.

    1987-11-01

    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers.

  8. Development of the large-area silicon PIN diode with 2 millimeter-thick depletion layer for hard x-ray detector (HXD) on board ASTRO-E

    NASA Astrophysics Data System (ADS)

    Sugizaki, Mutsumi; Kubo, S.; Murakami, Toshio; Ota, Naomi; Ozawa, Hideki; Takahashi, Tadayuki; Kaneda, Hidehiro; Iyomoto, Naoko; Kamae, Tuneyoshi; Kokubun, Motohide; Kubota, Aya; Makishima, Kazuo; Tamura, Takayuki; Tashiro, Makoto

    1997-07-01

    ASTRO-E is the next Japanese x-ray satellite to be launched in the year 2000. It carries three high-energy astrophysical experiments, including the hard x-ray detector (HXD) which is unique in covering the wide energy band from 10 keV to 700 keV with an extremely low background. The HXD is a compound-eye detector, employing 16 GSO/BGO well-type phoswich scintillation counters together with 64 silicon PIN detectors. The scintillation counters cover an energy range of 40 - 700 keV, while the PIN diodes fill the intermediate energy range from 10 keV to 70 keV with an energy resolution about 3 keV. In this paper, we report on the developments of the large area, thick silicon PIN diodes. In order to achieve a high quantum efficiency up to 70 keV with a high energy resolution, we utilize a double stack of silicon PIN diodes, each 20 by 20 mm(superscript 2) in size and 2 mm thick. Signals from the two diodes are summed into a single output. Four of these stacks (or eight diodes) are placed inside the deep BGO active-shield well of a phoswich counter, to achieve an extremely low background environment. Thus, the HXD utilizes 64 stacked silicon PIN detectors, achieving a total geometrical collecting area of 256 cm(superscript 2). We have developed the 2 mm thick silicon PIN diodes which have low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal. Through various trials in fabricating PIN diodes with different structures, we have found optimal design parameters, such as mask design of the surface p(superscript +) layer and the implantation process.

  9. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  10. Crystal growth of CdTe in space and thermal field effects on mass flux and morphology

    NASA Technical Reports Server (NTRS)

    Wiedemeier, H.

    1988-01-01

    The primary, long-range goals are the development of vapor phase crystal growth experiments, and the growth of technologically useful crystals in space. The necessary ground-based studies include measurements of the effects of temperature variations on the mass flux and crystal morphology in vapor-solid growth processes. For in-situ mass flux measurements dynamic microbalance techniques will be employed. Crystal growth procedures and equipment will be developed to be compatible with microgravity conditions and flight requirements. Emphasis was placed on the further development of crystal growth and the investigation of relevant transport properties of CdTe. The dependence of the mass flux on source temperature was experimentally established. The CdTe synthesis and pretreatment procedures are being developed that yield considerable improvements in mass transport rates, and mass fluxes which are independent of the amount of source material. A higher degree of stoichiometric control of CdTe than before was achieved during this period of investigation. Based on this, a CdTe crystal growth experiment, employing physical vapor transport, yielded very promising results. Optical microscopy and X-ray diffraction studies revealed that the boule contained several large sized crystal grains of a high degree of crystallinity. Further characterization studies of CdTe crystals are in progress. The reaction chamber, furnace dimensions, and ampoule location of the dynamic microbalance system were modified in order to minimize radiation effects on the balance performance.

  11. A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

    NASA Astrophysics Data System (ADS)

    Naderi, Ebadollah; Ghaisas, S. V.

    2016-08-01

    In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

  12. Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995

    SciTech Connect

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A.

    1996-01-01

    This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

  13. NONLINEAR OPTICS: Energy exchange between optical waves due to self-diffraction by photorefractive gratings in a CdTe crystal

    NASA Astrophysics Data System (ADS)

    Borshch, A. A.; Brodin, M. S.; Burin, O. M.; Volkov, V. I.; Kukhtarev, N. V.; Semenets, T. I.; Smereka, Z. N.

    1990-07-01

    Theoretical and experimental investigations were made of a photorefractive nonlinearity of CdTe semiconductor crystals. Photorefractive gratings were formed in undoped CdTe and used to provide efficient energy exchange between nanosecond pulsed light beams (λ approx 1.06 μm) characterized by an exchange gain of ~ 0.13 cm - 1.

  14. Multi-element silicon detector for x-ray flux measurements

    SciTech Connect

    Thompson, A.C.; Goulding, F.S.; Sommer, H.A.; Walton, J.T.; Hughes, E.B.; Rolfe, J.; Zeman, H.D.

    1981-10-01

    A 30-element Si(Li) detector has been fabricated to measure the one-dimensional flux profile of 33 KeV x-rays from a synchrotron radiation beam. The device, which is fabricated from a single 39 mm x 15 mm silicon wafer, is a linear array of 0.9 mm x 7 mm elements with a 1 mm center-to-center spacing. It is 5 mm thick and when operated at room temperature has an average leakage current of 10 nA/element. The x-ray flux in each element is determined by measuring the current with a high quality operational amplifier followed by a current digitizer. This detector is being used to study the use of synchrotron radiation for non-invasive imaging of coronary arteries. The experiment uses the difference in the transmitted flux of a monochromatized x-ray beam above and below the iodine K-edge. Measurements have been made on plastic phantoms and on excised animal hearts with iodinated arteries. The images obtained indicate that a 256-element device with similar properties, but with 0.6 mm element spacing, will make a very effective detector for high-speed medical imaging.

  15. A slot-scanned photodiode-array/CCD hybrid detector for digital mammography.

    PubMed

    Mainprize, James G; Ford, Nancy L; Yin, Shi; Tümer, Türmay; Yaffe, Martin J

    2002-02-01

    We have developed a novel direct conversion detector for use in a slot-scanning digital mammography system. The slot-scan concept allows for dose efficient scatter rejection and the ability to use small detectors to produce a large-area image. The detector is a hybrid design with a 1.0 mm thick silicon PIN photodiode array (the x-ray absorber) indium-bump bonded to a CCD readout that is operated in time-delay integration (TDI) mode. Because the charge capacity requirement for good image quality exceeds the capabilities of standard CCDs, a novel CCD was developed. This CCD consists of 24 independent sections, each acting as a miniature CCD with eight rows for TDI. The signal from each section is combined off-chip to produce a full signal image. The MTF and DQE for the device was measured at several exposures and compared to a linear systems model of signal and noise propagation. Because of the scanning nature of TDI imaging, both the MTF(f) and DQE(f) are reduced along the direction of the scanning motion. For a 26 kVp spectrum, the DQE(0) was measured to be 0.75+/-0.02 for an exposure of 1.29 x 10(-5) C/kg (50 mR). PMID:11865992

  16. Identification of static exposure of standard dosimetric badge with thermoluminescent detectors.

    PubMed

    Budzanowski, M; Olko, P; Kopeć, R; Obryk, B; Dzikiewicz-Sapiecha, H; Siwicki, R

    2007-01-01

    There are three main methods used in individual monitoring: radiographic films, thermoluminescence (TL) and optically stimulated luminescence (OSL). Distinguishing between static (e.g. by leaving it accidentally or purposely in the radiation field) and dynamic exposures can be almost routinely performed for radiographic and OSL methods but is still unsolved for TL detectors. The main aim of this work is to develop a method for identifying static exposures of standard TL detectors at doses which are typical of radiation protection. For this purpose, a new TLD reader equipped with a CCD camera was developed to measure the two-dimensional signal map and not only the total light emitted (as is performed with standard photomultiplier-based TL readers). Standard MCP-N (LiF:Mg,Cu,P) TL pellets of 4.5 mm diameter and 0.9 mm thickness were installed in the standard Rados TL personal badges with special, non-uniform filters and exposed statically to 33 keV X-ray beams at three angles: 0 degrees, 30 degrees and 60 degrees. The detectors were readout in the CCD camera reader and 2-D images were collected. The analysis of these CCD images allows the identification of the static exposure cases and partly the angle of incidence at a dose level of 20 mSv. PMID:17038405

  17. The Indiana silicon sphere 4 π charged-particle detector array

    NASA Astrophysics Data System (ADS)

    Kwiatkowski, K.; Bracken, D. S.; Morley, K. B.; Brzychczyk, J.; Foxford, E. Renshaw; Komisarcik, K.; Viola, V. E.; Yoder, N. R.; Dorsett, J.; Poehlman, J.; Madden, N.; Ottarson, J.

    1995-02-01

    A low threshold charged particle detector array for the study of fragmentation processes in light-ion-induced reactions has been constructed and successfully implemented at the IUCF and Saturne II accelerators. The array consists of 162-triple-element detector telescopes mounted in a spherical geometry and covering 74% of 4π in solid angle. Telescope elements are composed of (1) an axial-field gas ionization chamber operated with C3F8 gas; (2) a 0.5 mm thick passivated silicon detector, and (3) a 2.8 cm thick CsI(TI) scintillation crystal with photodiode readout. Discrete element identification is obtained for ejectiles up to Z ~ 16 over the dynamic range 0.7 <= E/A <= 95 MeV/nucleon. Isotopes are also distinguished for H, He, Li and Be ejectiles with 8 <~ E/A <~ 95 MeV. Custom-designed electronics are employed for bias supplies and linear signal processing. Data are acquired via a CAMAC/VME/Ethernet system.

  18. The MINDView brain PET detector, feasibility study based on SiPM arrays

    NASA Astrophysics Data System (ADS)

    González, Antonio J.; Majewski, Stan; Sánchez, Filomeno; Aussenhofer, Sebastian; Aguilar, Albert; Conde, Pablo; Hernández, Liczandro; Vidal, Luis F.; Pani, Roberto; Bettiol, Marco; Fabbri, Andrea; Bert, Julien; Visvikis, Dimitris; Jackson, Carl; Murphy, John; O'Neill, Kevin; Benlloch, Jose M.

    2016-05-01

    The Multimodal Imaging of Neurological Disorders (MINDView) project aims to develop a dedicated brain Positron Emission Tomography (PET) scanner with sufficient resolution and sensitivity to visualize neurotransmitter pathways and their disruptions in mental disorders for diagnosis and follow-up treatment. The PET system should be compact and fully compatible with a Magnetic Resonance Imaging (MRI) device in order to allow its operation as a PET brain insert in a hybrid imaging setup with most MRI scanners. The proposed design will enable the currently-installed MRI base to be easily upgraded to PET/MRI systems. The current design for the PET insert consists of a 3-ring configuration with 20 modules per ring and an axial field of view of ~15 cm and a geometrical aperture of ~33 cm in diameter. When coupled to the new head Radio Frequency (RF) coil, the inner usable diameter of the complete PET-RF coil insert is reduced to 26 cm. Two scintillator configurations have been tested, namely a 3-layer staggered array of LYSO with 1.5 mm pixel size, with 35×35 elements (6 mm thickness each) and a black-painted monolithic LYSO block also covering about 50×50 mm2 active area with 20 mm thickness. Laboratory test results associated with the current MINDView PET module concept are presented in terms of key parameters' optimization, such as spatial and energy resolution, sensitivity and Depth of Interaction (DOI) capability. It was possible to resolve all pixel elements from the three scintillator layers with energy resolutions as good as 10%. The monolithic scintillator showed average detector resolutions varying from 3.5 mm in the entrance layer to better than 1.5 mm near the photosensor, with average energy resolutions of about 17%.

  19. Study of Thick CZT Detectors for X-ray and Gamma-ray Astronomy

    SciTech Connect

    Li Q.; De Geronimo G.; Beilicke, M.; Lee, K.; Garson III, A.; Guo, Q.; Martin, J.; Yin, Y.; Dowkontt, P.; Jung, I.; Krawczynski, H.

    2011-02-12

    CdZnTe (CZT) is a wide bandgap II-VI semiconductor developed for the spectroscopic detection of X-rays and {gamma}-rays at room temperature. The Swift Burst Alert Telescope is using an 5240 cm{sup 2} array of 2 mm thick CZT detectors for the detection of 15-150 keV X-rays from Gamma-ray Bursts. We report on the systematic tests of thicker (0.5 cm) CZT detectors with volumes between 2 cm{sup 3} and 4 cm{sup 3} which are potential detector choices for a number of future X-ray telescopes that operate in the 10 keV to a few MeV energy range. The detectors contacted in our laboratory achieve Full Width Half Maximum energy resolutions of 2.7 keV (4.5%) at 59 keV, 3 keV (2.5%) at 122 keV and 4 keV (0.6%) at 662 keV. The 59 keV and 122 keV energy resolutions are among the world-best results for 0.5 cm thick CZT detectors. We use the data set to study trends of how the energy resolution depends on the detector thickness and on the pixel pitch. Unfortunately, we do not find clear trends, indicating that even for the extremely good energy resolutions reported here, the achievable energy resolutions are largely determined by the properties of individual crystals. Somewhat surprisingly, we achieve the reported results without applying a correction of the anode signals for the depth of the interaction. Measuring the interaction depths thus does not seem to be a pre-requisite for achieving sub-1% energy resolutions at 662 keV.

  20. Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993

    SciTech Connect

    Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A.

    1994-09-01

    Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

  1. IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

    SciTech Connect

    Kozyrev, S. P.

    2009-07-15

    A comparative analysis of multiperiod ZnTe/CdTe superlattices with the CdTe quantum dots grown by molecular beam epitaxy on the GaAs substrate with the ZnTe and CdTe buffer layers is carried out. The elastic-stress-induced shifts of eigenfrequencies of the modes of the CdTe- and ZnTe-like vibrations of materials forming similar superlattices but grown on different buffer ZnTe and CdTe layers are compared. The conditions of formation of quantum dots in the ZnTe/CdTe superlattices on the ZnTe and CdTe buffer layers differ radically.

  2. Single-Wall Carbon Nanotube Networks as a Transparent Back Contact in CdTe Solar Cells

    SciTech Connect

    Barnes, T. M.; Wu, X.; Zhou, J.; Duda, A.; van de Lagemaat, J.; Coutts, T. J.; Weeks, C. L.; Britz, D. A.; Glatkowski, P.

    2007-01-01

    Single-wall carbon nanotube (SWCNT) networks form a highly transparent and electrically conductive thin film that can be used to replace traditional transparent conducting oxides (TCOs) in a variety of applications. Here, the authors demonstrate their use as a transparent back contact in a near-infrared (NIR) transparent CdTe solar cell. SWCNT networks are hole-selective conductors and have a significantly greater NIR transparency than TCOs--qualities which could both make them very useful in tandem thin-film solar cells. SWCNT networks can be incorporated into single-junction CdTe devices and in CdTe top cells for mechanically stacked thin-film tandem devices, as described here. The best device efficiency using SWCNTs in the back contact was 12.4%, with 40%-50% transmission between 800 and 1500 nm.

  3. Luminescence Dynamics of Cr2+ in CdTe and Cd0.55Mn0.45Te

    NASA Astrophysics Data System (ADS)

    Bluiett, A.; Hommerich, U.; Seo, J. T.; Shah, R.; Trivedi, S. B.; Kutcher, S. W.; Chen, R. J.; Wang, C. C.; Zong, H.

    2001-04-01

    Cr^2+ in tetrahedrally coordinated CdTe and Cd_0.55Mn_0.45Te crystals are under investigation as potential host materials for tunable, mid-infrared (MIR) lasers. The small crystal field splitting of the free ion energy levels of Cr^2+ induces absorption (1900nm) and stokes shifted emission (2000nm-3000nm) bands in the MIR. Also, the relatively large ionic mass and tetrahedral environment of Cr^2+ in CdTe and Cd_0.55Mn_0.45Te have shown that the luminescence efficiency at room temperature is approximately 72100luminescence lifetime decreases rapidly, which suggest that the effects of nonradiative decay increases. The decay dynamics of Cr^2+ in CdTe and Cd_0.55Mn_0.45Te will be described with the model of Struck and Fonger for the non-radiative decay rate.

  4. Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Grecu, D.; Compaan, A. D.; Young, D.; Jayamaha, U.; Rose, D. H.

    2000-09-01

    We explore Cu electronic states in CdTe using photoluminescence as the main investigative method. Our results are consistent with some Cu atoms occupying substitutional positions on the Cd sublattice and with others forming Frenkel pairs of the type Cui+-VCd- involving an interstitial Cu and a Cd vacancy. In addition, we find that Cu-doped CdTe samples exhibit a significant "aging" behavior, attributable to the instability of Cu acceptor states as verified by our Hall measurements. The aging appears to be reversible by a 150-200 °C anneal. Our results are used to explain efficiency degradation of some CdTe solar-cell devices which use Cu for the formation of a backcontact.

  5. Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

    NASA Astrophysics Data System (ADS)

    Rousset, J.-G.; Kobak, J.; Janik, E.; Parlinska-Wojtan, M.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W.

    2016-05-01

    We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn2+ ion.

  6. Fabrication of polycrystalline CdTe thin-film solar cells using carbon electrodes with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Okamoto, Tamotsu; Hayashi, Ryoji; Ogawa, Yohei; Hosono, Aikyo; Doi, Makoto

    2015-04-01

    The effects of adding carbon nanotubes (CNTs) to carbon back electrodes in polycrystalline CdTe thin-film solar cells were investigated. The CNTs were prepared by arc discharge under atmospheric pressure. The conductivity of the obtained CNT film with a density of 1.65 g/cm3 was approximately 2.6 × 103 S/cm. In the CdTe solar cells using carbon back electrodes with CNTs, the fill factor (FF) was improved as a result of adding CNTs with a concentration of 1 to 5 wt %. The improvement of FF was mainly due to the decrease in the series resistance of the CdTe solar cell. Furthermore, the open-circuit voltage (VOC) was improved by the CNT addition. The improvement of VOC was probably due to the reduction of the back barrier at the back contact.

  7. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

    NASA Astrophysics Data System (ADS)

    Lu, Jing; DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi; Zhang, Yong-Hang; Kovacs, Andras; Dunin-Borkowski, Rafal E.; Smith, David J.

    2016-04-01

    A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

  8. Dose distribution around a needle-like anode X-ray tube: dye-film vs. planar thermoluminescent detectors.

    PubMed

    Budzanowski, M; Olko, P; Marczewska, B; Czopyk, L; Slapa, M; Stras, W; Traczyk, M; Talejko, M

    2006-01-01

    The dosimetry around the X-ray tube with a needle-like anode (NAXT), developed at the Institute of Nuclear Studies, for interstitial brachytherapy has been performed using (1) dye films (Gafchromic XR-T), (2) large-area thermoluminescent (TL) detectors--prepared either by gluing TL powder onto thin Al foil (so-called planar detectors with spatial resolution of 0.1 mm) and (3) miniature (2 mm diameter and 0.5 mm thick) TL detectors. The measurements were performed in following geometries. (1) Needle inside a PMMA cylinder--the planar TL detector mounted on the surface of the cylinder. (2) Needle inside a thick block of PMMA and TL detector mounted vertically 7 mm from needle axis. TL detectors were read with the planar (2D) thermoluminescence reader, developed at IFJ, with a sensitive CCD (charge couple device) camera. Gafchromic films were evaluated with a system based on Agfa Arcus 1200 scanner and calibrated with X rays (35 kV) filtered with 0.03 mm Mo and with Co-60 photons. The intensity distribution of TL light on the planar detector was calibrated in terms of absorbed dose to water, using (137)Cs gamma-rays. TL planar detectors seem to be a promising tool for 2D dosimetry of miniature X-ray sources. Obtained results for TLDs and Gafchromic films seem to be comparable but differences have been found. Both methods are useful for measurements of dose distribution around the NAXT X-rays source. PMID:16614087

  9. Cadmium zinc telluride detector for low photon energy applications

    NASA Astrophysics Data System (ADS)

    Shin, Kyung-Wook; Wang, Kai; Reznic, Alla; Karim, Karim S.

    2010-04-01

    Cadmium Zinc Telluride (CdZnTe or CZT) is a polycrystalline radiation detector that has been investigated over the years for a variety of applications including Constellation X-ray space mission [1] and direct-conversion medical imaging such as digital mammography [2]. Due to its high conversion gain and low electron-hole pair creation energy (~4.43 eV) [3], it has found use in high end, photon counting medical imaging applications including positron emission tomography (PET), computed tomography (CT) and single photon emission computed tomography (SPECT). However, its potential in low photon energy applications has not been fully explored. In this work, we explore the capacity of the CZT material to count low photon energies (6 keV - 20 keV). These energies are of direct relevance to applications in gamma ray breast brachytheraphy and mammography, X-ray protein crystallography, X-ray mammography and mammography tomosynthesis. We also present a design that integrates the CZT direct conversion detector with an inhouse fabricated amorphous silicon (a-Si:H) thin film transistor (TFT) passive pixel sensor (PPS) array. A CZT photoconductor (2 cm x 2 cm size, 5-mm-thick) prepared by the traveling heat method (THM) from RedlenTM is characterized. The current-voltage characteristics reveal a resistivity of 3.3 x 1011 Ω•cm and a steady state dark current in the range of nA. Photocurrent transients under different biases and illumination pulses are studied to investigate photogeneration and the charge trapping process. It is found that charge trapping plays a more significant role in transient behavior at low biases and low frequency.

  10. Characterization of CdTe, (Cd,Zn)Te, and Cd(Te,Se) single crystals by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Rai, R. S.; Mahajan, S.; McDevitt, S.; Johnson, C. J.

    1991-10-01

    CdTe, (Cd,Zn)Te, and Cd(Te,Se) crystals grown by the Bridgman technique have been characterized by transmission electron microscopy. Results indicate that the Te precipitates are seen in all the crystals, but their density and size are lowest and largest in the case of Cd(Te,Se) crystals. In addition, dislocations, stacking faults, and microtwins are observed in as-grown CdTe, (Cd,Zn)Te, and Cd(Te,Se) crystals. Arguments have been developed to rationalize these observations and their ramifications on crystal perfection are discussed.

  11. Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

    SciTech Connect

    Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

    2014-03-01

    We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

  12. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    NASA Astrophysics Data System (ADS)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-06-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  13. Allyl- iso-propyltelluride, a new MOVPE precursor for CdTe, HgTe and (Hg,Cd)Te

    NASA Astrophysics Data System (ADS)

    Hails, Janet E.; Cole-Hamilton, David J.; Stevenson, John; Bell, William

    2000-06-01

    The use of allyl- iso-propyltelluride as the tellurium precursor for the growth of CdTe, HgTe and (Hg,Cd)Te by metal organic vapour-phase epitaxy has been investigated. It has proved to be an efficient source of tellurium with growth rates for HgTe and (Hg,Cd)Te of up to 10 μm h -1 at 300°C. The best CdTe was grown at 4.5 μm h -1 under Me 2Cd-rich conditions at 300°C in the presence of Hg vapour.

  14. Sn doped CdTe as candidate for intermediate-band solar cells: A first principles DFT+GW study

    NASA Astrophysics Data System (ADS)

    Flores, Mauricio A.; Menéndez-Proupin, Eduardo

    2016-05-01

    In this work, we investigate the electronic properties and defect formation energies of Sn doped CdTe combining first principles density-functional theory and many body GW calculations. Due to the Sn dopant, an isolated impurity band is formed in the middle of the forbidden band gap of CdTe allowing the absorption of sub-bandgap photons via an intermediate-band. Our results suggest CdTe:Sn as a promising candidate for the development of third-generation intermediate-band solar cells with theoretical efficiencies up to 63.2%.

  15. High-efficiency CdTe thin-film solar cells using metalorganic chemical vapor deposition techniques

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.; Meyers, P. V.; Liu, C. H.

    1989-01-01

    Energy conversion efficiency of metalorganic chemical vapor deposited CdTe as an intrinsic active layer in n-i-p solar cell structures is reported. Small-area devices with efficiencies over 9 percent have been demonstrated. I-V characteristics, photospectral response, and the results of Auger profiling of structural composition for typical devices will be presented. Also presented are preliminary results on similar photovoltaic devices having Cd(0.85)Mn(0.15)Te in place of CdTe as an i layer.

  16. Fabrication of stable, large-area, thin-film CdTe photovoltaic modules

    SciTech Connect

    Nolan, J.F.; Meyers, P.V. )

    1992-09-01

    Solar Cells, Inc (SCI) has a program to produce 60 cm X 120 cm solar modules based on CdTe films. The method of choice for semiconductor deposition is condensation from high temperature vapor's. Early work focussed on Close Spaced Sublimation and Chemical Vapor Deposition using elemental sources, but later equipment designs no longer strictly conform to either category. Small area efficiency has been confirmed by NREL at 9.3% on a 0.22 cm{sup 2} device (825 mV Voc, 18.2 mA/cm{sup 2} Jsc, and 0.62 FF) deposited on a 100 cm{sup 2} substrate. On 8 cell, 64 cm{sup 2} submodules, the best result to date is 7.3% (5.9 V Voc, 130 mA Isc, and 0.61 FF). CdS, CdTe, and ZnTe films have been deposited onto 60 cm X 120 cm substrates - single cells produced from this material have exceeded 8% efficiency, 64 cm{sup 2} submodules have exceeded 5%. Module efficiency is limited by mechanical defects - mostly shunts - associated with processing after deposition of the semiconductor layer's. Present best result is 1.4% total area efficiency. In anticipation of more advanced designs, CdTe films have also been deposited from apparatus employing elemental sources. This project is in an early stage and has produced only rudimentary results. A pro-active Safety, Health, Environmental and Disposal program has been developed. Results to date indicate that both employees and the environment have been protected against overexposure to hazards including toxic chemicals.

  17. Temperature dependence of the electron spin g factor in CdTe and InP

    NASA Astrophysics Data System (ADS)

    Pfeffer, Pawel; Zawadzki, Wlodek

    2012-04-01

    Temperature dependence of the electron spin g factors in bulk CdTe and InP is calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P.p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated by summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of a magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiments in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of band-edge g values in the two materials. Good agreement between the theory and experiments strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

  18. High Efficiency Single Crystal CdTe Solar Cells: November 19, 2009 - January 31, 2011

    SciTech Connect

    Carmody, M.; Gilmore, A.

    2011-05-01

    The goal of the program was to develop single crystal CdTe-based top cells grown on Si solar cells as a platform for the subsequent manufacture of high efficiency tandem cells for CPV applications. The keys to both the single junction and the tandem junction cell architectures are the ability to grow high quality single-crystal CdTe and CdZnTe layers on p-type Si substrates, to dope the CdTe and CdZnTe controllably, both n and p-type, and to make low resistance ohmic front and back contacts. EPIR demonstrated the consistent MBE growth of CdTe/Si and CdZnTe/Si having high crystalline quality despite very large lattice mismatches; epitaxial CdTe/Si and CdZnTe/Si consistently showed state-of-the-art electron mobilities and good hole mobilities; bulk minority carrier recombination lifetimes of unintentionally p-doped CdTe and CdZnTe grown by MBE on Si were demonstrated to be consistently of order 100 ns or longer; desired n- and p-doping levels were achieved; solar cell series specific resistances <10 ?-cm2 were achieved; A single-junction solar cell having a state-of-the-art value of Voc and a unverified 16.4% efficiency was fabricated from CdZnTe having a 1.80 eV bandgap, ideal for the top junction in a tandem cell with a Si bottom junction.

  19. Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe

    NASA Astrophysics Data System (ADS)

    Krasikov, D. N.; Scherbinin, A. V.; Knizhnik, A. A.; Vasiliev, A. N.; Potapkin, B. V.; Sommerer, T. J.

    2016-02-01

    We present an analysis of recombination activity of intrinsic defects (VCd, TeCd, VTe, and Tei) in CdTe based on the multiphonon single-mode carrier-capture model, with vibronic parameters obtained using hybrid density functional theory. This analysis allows us to determine the defects and the corresponding electronic processes that have high trapping rates for electrons, for holes, or for both. The latter, being potentially the most active recombination centers, decreases the carrier lifetime in the absorber layer of a CdTe solar cell. Taking into account the relatively high calculated capture cross-sections of the TeCd antisite defect (σ = 8.7× 10-15 cm2 for electron capture on TeCd+2 defect, σ = 6.8 × 10-14 cm2 for hole capture on TeCd+1 defect at room temperature) and its deep trapping level (0.41 eV for +2/+1 level), we conclude that this defect is the most active recombination center among the intrinsic defects in p-type CdTe. Other processes that do not lead to effective recombination are: (i) fast hole capture on Tei+1 defect (σ = 1.1 × 10-13 cm-2), (ii) electron capture on TeCd+1 defect (σ = 2.9 × 10-15 cm-2), (iii) somewhat slower hole capture on TeCd0 defect (σ = 9.4 × 10-20 cm-2), (iv) hole capture on VCd-1 defect (σ = 7 × 10-19 cm2), and (v) electron capture on Tei+1 defect (σ = 4.4 × 10-19 cm-2). The cross-sections are found to be negligibly small for the remaining capture processes.

  20. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

    SciTech Connect

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, Vasant; Ganesan, V.

    2014-12-07

    In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, and oscillator energy (E{sub o}) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 10{sup 4} Ω cm was obtained for the CdTe:Cu (3 wt. %) film.