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Sample records for modeling euvl mask

  1. A practical approach for modeling EUVL mask defects

    SciTech Connect

    Gullikson, E.M.; Cerjan, C.; Stearns, D.J.; Mirkarimi, P.B.; Sweeney, D.W.

    2001-06-01

    An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer coating. In this single surface approximation (SSA) the defective multilayer structure is replaced by a single reflecting surface with the shape of the top surface of the multilayer. The range of validity of this approximation has been investigated for Gaussian line defects using 2D finite-difference-time-domain simulations. The SSA is found to be valid for sufficiently low aspect ratio defects such as those expected for the critical defects nucleated by particles on the mask substrate. The critical EUVL defect size is calculated by combining the SSA with a multilayer growth model and aerial image simulations. Another approximate method for calculating the aerial image of an unresolved defect is also discussed. Although the critical substrate defects may be larger than the resolution of higher NA cameras, the point defect approximation provides a useful framework for understanding the printability of a wide range of defects.

  2. EUVL Mask Blank Repair

    SciTech Connect

    Barty, A; Mirkarimi, P; Stearns, D G; Sweeney, D; Chapman, H N; Clift, M; Hector, S; Yi, M

    2002-05-22

    EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Small defects in this thin film coating can significantly alter the reflected field and introduce defects in the printed image. Ideally one would want to produce defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to effectively repair multilayer defects, and to this effect they present two complementary defect repair strategies for use on multilayer-coated EUVL mask blanks. A defect is any area on the mask which causes unwanted variations in EUV dose in the aerial image obtained in a printing tool, and defect repair is correspondingly defined as any strategy that renders a defect unprintable during exposure. The term defect mitigation can be adopted to describe any strategy which renders a critical defect non-critical when printed, and in this regard a non-critical defect is one that does not adversely affect device function. Defects in the patterned absorber layer consist of regions where metal, typically chrome, is unintentionally added or removed from the pattern leading to errors in the reflected field. There currently exists a mature technology based on ion beam milling and ion beam assisted deposition for repairing defects in the absorber layer of transmission lithography masks, and it is reasonable to expect that this technology will be extended to the repair of absorber defects in EUVL masks. However, techniques designed for the repair of absorber layers can not be directly applied to the repair of defects in the mask blank, and in particular the multilayer film. In this paper they present for the first time a new technique for the repair of amplitude defects as well as recent results on the repair of phase defects.

  3. Electrostatic chucking and EUVL mask flatness analysis

    NASA Astrophysics Data System (ADS)

    Nataraju, M.; Mikkelson, A.; Sohn, J.; Engelstad, R. L.; Lovell, E. G.

    2005-11-01

    Successful implementation of Extreme Ultraviolet Lithography (EUVL) depends on advancements in many areas, including the quality of the mask and chuck system to control image placement (IP) errors. One source of IP error is the height variations of the patterned mask surface (i.e., its nonflatness). The SEMI EUVL mask and chucking standards (SEMI P37 and SEMI P40) describe stringent requirements for the nonflatness of the mask frontside and backside, and the chucking surfaces. Understanding and characterizing the clamping ability of the electrostatic chuck and the effect on the mask flatness is therefore critical in order to meet these requirements. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients (obtained from measured mask and chuck data) as input data to define the surfaces of the mask and the chuck. The FE models are then used to determine the clamping response of the mask and the resulting flatness of the pattern surface. The sum of the mask thickness nonuniformity and the chuck surface shape has a dominant effect on the flatness of the patterned surface after chucking. The focus of the present research is a comprehensive analysis of the flatness and interaction between the nonflat chuck and the mask. Experiments will be conducted using several sample masks chucked by a slab type electrostatic chuck. Results from the study will support and facilitate the timely development of EUVL mask/chuck systems which meet required specifications.

  4. SEMATECH EUVL mask program status

    NASA Astrophysics Data System (ADS)

    Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

    2009-04-01

    As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been

  5. Effect of electrostatic chucking on EUVL mask flatness

    NASA Astrophysics Data System (ADS)

    Mikkelson, Andrew R.; Engelstad, Roxann L.; Lovell, Edward G.; Aschke, Lutz; Rueggeberg, Frauke; Sobel, Frank

    2004-06-01

    The International Technology Roadmap for Semiconductors for Extreme Ultraviolet Lithography (EUVL) places strict requirements on the quality and flatness of the substrate and patterned mask. The SEMI EUVL Mask Substrate Standard (SEMI P37) specifies that the substrate frontside and backside nonflatness be no more than 50 nm peak-to-valley (p-v). Recent technological advances in polishing and finishing techniques have placed the 50 nm p-v specification within reach. A key ingredient in the development of EUVL is understanding and characterizing the clamping ability of the electrostatic chuck and the resulting effect on the flatness of the chucked mask. By implementing the shape of a representative EUVL mask surface into a numerical model, the effect of electrostatic chucking on the shape of the mask was determined. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients as input data to define the surfaces of an EUVL mask. The FE models were then used to determine the clamping response of the mask. In particular, the maximum mask-to-chuck gap within the Flatness Quality Area and over the entire mask has been tracked as a function of clamping pressure for representative EUVL surfaces. One of the important parameters in this study was the chuck's mechanical stiffness (comprised of the thickness and modulus). The flatness of the EUVL mask also depends on the intrinsic stress and thickness of the multilayer and backside layers. The results in this paper show that the recent advances in EUVL substrate polishing have resulted in masks that can be chucked relatively flat.

  6. EUVL mask repair: expanding options with nanomachining

    NASA Astrophysics Data System (ADS)

    Gallagher, Emily; McIntyre, Gregory; Lawliss, Mark; Robinson, Tod; Bozak, Ronald; White, Roy; LeClaire, Jeff

    2012-11-01

    Mask defectivity is often cited as a barrier to EUVL manufacturing, falling just behind low source power. Mask defectivity is a combination of intrinsic blank defects, defects introduced during the mask fabrication and defects introduced during the use of the mask in the EUV exposure tool. This paper works towards minimizing the printing impact of blank defects so that the final EUVL mask can achieve a lower defectivity. Multilayer defects can be created by a step or scratch as shallow as 1nm in the substrate. These small defects create coherent disruptions in the multilayer that can generate significant variations in mask reflectivity and induce clearly-defined, printable defects. If the optical properties of the defect can be well understood, nanomachining repair processes can be deployed to fix these defects. The purpose of this work is to develop new nanomachining repair processes and approaches that can repair complex EUVL mask defects by targeted removal of the EUVL mask materials. The first phase of this work uses nanomachining to create artificial phase defects of different types and sizes for both printability evaluation and benchmarking with simulation. Experimental results validate the concept, showing a reasonable match between imaging with the LBNL Actinic Inspection Tool (AIT) and simulation of the mask topography measured by AFM. Once the printability of various nanomachined structures is understood, the second phase of the work aims to optimize the process to repair real EUVL mask defects with surrounding absorber patterns.

  7. Electrostatic chucking of EUVL masks: coefficients of friction

    NASA Astrophysics Data System (ADS)

    Kalkowski, Gerhard; Semmler, Christian; Risse, Stefan; Peschel, Thomas; Damm, Christoph; Müller, Sandra; Bauer, René

    2010-04-01

    In extreme ultraviolet lithography (EUVL), the mask hangs on an electrostatic chuck and is moved laterally during exposition. For proper control of the chucked mask under corresponding inertial forces, static friction of the mask on the chuck is critical and an important input parameter for reliable theoretical modelling. To determine static and dynamic friction values, measurements were performed in vacuum on a mask blank with a test chuck, smaller than a real EUVL mask chuck, but otherwise nearly identical in its characteristics. Experimental results were obtained at various voltages for a materials combination of Low Thermal Expansion Glass (LTEM) for the pin chuck surface and a mask blank with a chromium metal backside metallisation, respectively. Dynamic friction was found to be only marginally smaller than static friction and values in the range from 0.27 to 0.33 were determined for the static friction coefficient under vacuum conditions.

  8. EUVL mask inspection at Hydrogen Lyman Alpha

    NASA Astrophysics Data System (ADS)

    Jota, Thiago S.; Milster, Tom D.

    2012-11-01

    Mask inspection is an outstanding challenge for Extreme Ultra-Violet Lithography (EUVL). The purpose of this investigation is to compare imaging characteristics of ArF and KrF inspection sources to imaging characteristics using a source at the Lyman-alpha line of Hydrogen at 121.6nm (HLA). HLA provides a raw resolution improvement of 37% to ArF and 51% to KrF, based on proportional wavelength scaling. The HLA wavelength is in an atmospheric transmission window, so a vacuum environment is not required. Our comparison uses rigorous vector imaging techniques to simulate partially coherent illumination schemes and reasonably accurate mask material properties and dimensions. Contrast is evaluated for representative spatial frequencies. Imaging and detection of defects are also considered with NILS and MEEF. The goal is high throughput inspection with maximum resolution, contrast, and sensitivity.

  9. Experimental verification of finite element model prediction of EUVL mask flatness during electrostatic chucking

    NASA Astrophysics Data System (ADS)

    Nataraju, Madhura; Sohn, Jaewoong; Mikkelson, Andrew R.; Turner, Kevin T.; Engelstad, Roxann L.; Van Peski, Chris K.

    2006-10-01

    Stringent flatness requirements have been imposed for the front and back surfaces of extreme ultraviolet lithography masks to ensure successful pattern transfer within the image placement error budget. During exposure, an electrostatic chuck will be used to support and flatten the mask. It is therefore critical that the electrostatic chucking process and its effect on mask flatness be well-understood. The current research is focused on the characterization of various aspects of electrostatic chucking through advanced finite element (FE) models and experiments. FE models that use flatness measurements of the mask and the chuck to predict the final flatness of the pattern surface have been developed. Pressure was applied between the reticle and chuck to simulate electrostatic clamping. The modeling results are compared to experimental data obtained using a bipolar Coulombic pin chuck. Electrostatic chucking experiments were performed in a cleanroom, within a vacuum chamber mounted on a vibration isolation cradle, to minimize the effects of particles, humidity, and static charges. During these experiments, the chuck was supported on a 3-point mount; the reticle was placed on the chuck with the backside in contact with the chucking surface and the voltage was applied. A Zygo interferometer was used to measure the flatness of the reticle before and after chucking. The FE models and experiments provide insight into the electrostatic chucking process which will expedite the design of electrostatic chucks and the development of the SEMI standards.

  10. Effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance

    NASA Astrophysics Data System (ADS)

    Dietze, Uwe; Dress, Peter; Waehler, Tobias; Singh, Sherjang; Jonckheere, Rik; Baudemprez, Bart

    2011-03-01

    Extreme Ultraviolet Lithography (EUVL) is considered the leading lithography technology choice for semiconductor devices at 16nm HP node and beyond. However, before EUV Lithography can enter into High Volume Manufacturing (HVM) of advanced semiconductor devices, the ability to guarantee mask integrity at point-of-exposure must be established. Highly efficient, damage free mask cleaning plays a critical role during the mask manufacturing cycle and throughout the life of the mask, where the absence of a pellicle to protect the EUV mask increases the risk of contamination during storage, handling and use. In this paper, we will present effective EUVL mask cleaning technology solutions for mask manufacturing and in-fab mask maintenance, which employs an intelligent, holistic approach to maximize Mean Time Between Cleans (MBTC) and extend the useful life span of the reticle. The data presented will demonstrate the protection of the capping and absorber layers, preservation of pattern integrity as well as optical and mechanical properties to avoid unpredictable CD-linewidth and overlay shifts. Experiments were performed on EUV blanks and pattern masks using various process conditions. Conditions showing high particle removal efficiency (PRE) and minimum surface layer impact were then selected for durability studies. Surface layer impact was evaluated over multiple cleaning cycles by means of UV reflectivity metrology XPS analysis and wafer prints. Experimental results were compared to computational models. Mask life time predictions where made using the same computational models. The paper will provide a generic overview of the cleaning sequence which yielded best results, but will also provide recommendations for an efficient in-fab mask maintenance scheme, addressing handling, storage, cleaning and inspection.

  11. Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Hector, S D; Shell, M; Taylor, J S; Tong, W M

    1999-09-28

    The mask is deemed one of the areas that require significant research and development in EUVL. Silicon wafers will be used for mask substrates for an alpha-class EUVL exposure tool due to their low-defect levels and high quality surface finish. However, silicon has a large coefficient of thermal expansion that leads to unacceptable image distortion due to absorption of EUV light. A low thermal expansion glass or glass-ceramic is likely to be required in order to meet error budgets for the 70nm node and beyond. Since EUVL masks are used in reflection, they are coated with multilayers prior to patterning. Surface imperfections, such as polishing marks, particles, scratches, or digs, are potential nucleation sites for defects in the multilayer coating, which could result in the printed defects. Therefore we are accelerating developments in the defect reduction and surface finishing of low thermal expansion mask substrates in order to understand long-term issues in controlling printable defects, and to establish the infrastructure for supplying masks. In this paper, we explain the technical requirements for EUVL mask substrates and describe our efforts in establishing a SEMI standard for EUVL masks. We will also report on the early progress of our suppliers in producing low thermal-expansion mask substrates for our development activities.

  12. EUVL printing results of a low-thermal expansion material (LTEM) mask

    NASA Astrophysics Data System (ADS)

    Tong, William M.; Taylor, John S.; Hector, Scott D.; Shell, Melissa K.; Zhang, Guojing; Kearney, Patrick A.; Walton, Christopher C.; Larson, Cindy C.; Wasson, James R.; Mangat, Pawitter J. S.; O'Connell, Donna J.; Folk, Daniel R.

    2000-07-01

    Minimizing image placement errors due to thermal distortion of the mask is a key requirement for qualifying EUV Lithography as a Next Generation Lithography (NGL). Employing Low Thermal Expansion Materials (LTEMs) for mask substrates is a viable solution for controlling mask thermal distortion and is being investigated by a wide array of researchers, tool makers, photomask suppliers, and material manufacturers. Finite element modeling has shown that an EUVL mask with a Coefficient of Thermal Expansion (CTE) of less than 20 ppb/K will meet overlay error budgets for EUVL masks; some of these differences are EUVL specific, while others are natural consequences of the shrinking critical dimension. We demonstrate that a feasible manufacturing pathway exists for Low Thermal Expansion Material (LTEM) EUVL masks by fabricating a wafer-shaped LTEM mask substrate using the same manufacturing steps as for fabricating Si wafers. The LTEM substrate was then coated with Mo/Si multilayers, patterned, and printed using the 10X Microstepper. The images were essentially indistinguishable from those images acquired from masks fabricated from high quality silicon wafers as substrates. Our observations lend further evidence that an LTEM can be used as the EUVL mask substrate material.

  13. Evaluation of alternative capping layers for EUVL mask ML blank

    NASA Astrophysics Data System (ADS)

    Yan, Pei-yang; Spiller, Eberhard; Gullikson, Eric; Hill, Shannon

    2005-11-01

    The standard silicon (Si) capping layer used for extreme ultra-violet lithography (EUVL) multilayer (ML) mask blanks has some shortcomings, such as low oxidation resistance, low chemical resistance, low etch selectivity in either the SiO2 buffer layer etch to the capping layer or the absorber etch (e.g., TaN) to the capping layer. These performance and process issues with Si capped ML mask blank will reduce the mask lifetime and require tighter process control during EUVL mask fabrication. Alternative capping materials have been investigated for both EUVL optics and for mask applications.1-5 It has been initially demonstrated that Ru capping layers have high oxidation resistance and high mask process margin as compared to Si ML cap. In this paper, we will present a detailed evaluation of Ru and ion beam deposited (IBD) diamond-like-carbon (DLC) for EUVL mask application. Performance evaluations of the DLC mask blank capping layer and Ru capping layer were made in the area of reflectivity performance, shelf-life, and EUV exposure stability. It has been shown that EUV exposure induced capping layer change depends upon the exposure conditions. However, we found that as long as the induced relative change in the ML cap material are the same (e.g., the same amount of oxidation), regardless of exposure time and exposure conditions, the resulting reflectivity change is about the same. In the case of the two capping layer materials we evaluated, the capping surface reaction with active oxygen is the primary cause for the reflectivity degradation.

  14. Advances in Low-Defect Multilayers for EUVL Mask Blanks

    SciTech Connect

    Folta, J A; Davidson, J C; Larson, C C; Walton, C C; Kearney, P A

    2002-04-15

    Low-defect multilayer coatings are required to fabricate mask blanks for Extreme Ultraviolet Lithography (EUVL). The mask blanks consist of high reflectance E W multilayers on low thermal expansion substrates. A defect density of 0.0025 printable defects/cm{sup 2} for both the mask substrate and the multilayer is required to provide a mask blank yield of 60%. Current low defect multilayer coating technology allows repeated coating-added defect levels of 0.05/cm{sup 2} for defects greater than 90 nm polystyrene latex sphere (PSL) equivalent size for lots of 20 substrates. Extended clean operation of the coating system at levels below 0.08/cm{sup 2} for 3 months of operation has also been achieved. Two substrates with zero added defects in the quality area have been fabricated, providing an existence proof that ultra low defect coatings are possible. Increasing the ion source-to-target distance from 410 to 560 mm to reduce undesired coating of the ion source caused the defect density to increase to 0.2/cm{sup 2}. Deposition and etching diagnostic witness substrates and deposition pinhole cameras showed a much higher level of ion beam spillover (ions missing the sputter target) than expected. Future work will quantify beam spillover, and test designs to reduce spillover, if it is confirmed to be the cause of the increased defect level. The LDD system will also be upgraded to allow clean coating of standard format mask substrates. The upgrade will confirm that the low defect process developed on Si wafers is compatible with the standard mask format 152 mm square substrates, and will provide a clean supply of EUVL mask blanks needed to support development of EUVL mask patterning processes and clean mask handling technologies.

  15. Characterization of electrostatically chucked EUVL mask blanks

    NASA Astrophysics Data System (ADS)

    Ligman, Rebekah K.; Shu, Emily Y.; Yan, Pei-yang

    2005-05-01

    The flatness of electrostatically chucked EUVL reticles was evaluated on two Zerodur bipolar coulombic electrostatic chucks (from Invax Technologies) of different thicknesses, which represent different chuck stiffness, different hardness of the dielectric material used for chuck surface, and different surface flatness finishing. A Zygo GPI interferometer was used to measure the flatness of the chucked reticles, freestanding reticles, and chuck surfaces. The chucked reticle flatness was impacted by the flatness and shape of the front and back sides of the reticle and that of the chuck. Chucked reticle dynamics during chucking and reticle hysterisis were observed. A stable operation range for the e-chucks was found. We also observed backside-particle-induced-out of plane distortion (OPD) on the chucked reticle in the experiments when Cu particles of height 1 to 3μm were placed between the chuck and the reticle backside.

  16. Actinic defect counting statistics over 1 cm2 area of EUVL mask blank

    SciTech Connect

    Jeong, Seongtae; Lai, Chih-Wei; Rekawa, Seno; Walton, Chris W.; Bokor, Jeffrey

    2000-02-18

    As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm{sup 2} of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript.

  17. Challenges for 1x-nm device fabrication using EUVL: scanner and mask

    NASA Astrophysics Data System (ADS)

    Arnold, William H.

    2011-11-01

    EUVL lithography using high resolution step and scan systems operating at 13.5nm is being inserted in leading edge production lines for memory and logic devices. These tools use mirror optics and either laser produced plasma (LPP) or discharge produced plasma (DPP) sources along with reflective reduction masks to image circuit features. These tools show their capability to meet the challenging device requirements for imaging and overlay. Next generation scanners with resolution and overlay capability to produce 1X nm (10 nm class) memory and logic devices are in preparation. Challenges remain for EUVL, the principal of which are increasing source power enabling high productivity, building a volume mask business encouraging rapid learning cycles, and improving resist performance so it is capable of sub 20nm resolution.

  18. Particle transport in plasma systems for development of EUVL mask blanks

    NASA Astrophysics Data System (ADS)

    Stoltz, Peter; Likhanskii, Alex; Zhou, Chuandong; Jindal, Vibhu; Kearney, Patrick

    2012-11-01

    Defect transport in development of EUVL mask blanks is an important issue for the near-term of the industry. One main issue affecting transport is how the defect may charge in the presence of plasma. In some cases, plasma may act to contain defects away from the mask surface. We show simulation results of the effect of plasma on defect transport demonstrating how the formation of plasma sheathes and a plasma potential act to confine highly negatively charged particles, such as defect particles would be.

  19. Performance of actinic EUVL mask imaging using a zoneplatemicroscope

    SciTech Connect

    Goldberg, Kenneth A.; Naulleau, Patrick P.; Barty, Anton; Rekawa,Senajith B.; Kemp, Charles D.; Gunion, Robert F.; Salmassi, Farhad; Gullikson, Eric M.; Anderson, Erik H.; Han, Hak-Seung

    2007-08-20

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with {sigma} below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

  20. Performance of actinic EUVL mask imaging using a zoneplate microscope

    SciTech Connect

    Goldberg, K; Naulleau, P; Barty, A; Rekawa, S; Kemp, C; Gunion, R; Salmassi, F; Gullikson, E; Anderson, E; Han, H

    2007-09-25

    The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with {sigma} below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

  1. Performance in practical use of actinic EUVL mask blank inspection

    NASA Astrophysics Data System (ADS)

    Yamane, Takeshi; Kim, Yongdae; Takagi, Noriaki; Terasawa, Tsuneo; Ino, Tomohisa; Suzuki, Tomohiro; Miyai, Hiroki; Takehisa, Kiwamu; Kusunose, Haruhiko

    2014-07-01

    A high-volume manufacturing (HVM) actinic blank inspection (ABI) prototype has been developed, of which the inspection capability for a native defect was evaluated. An analysis of defect signal intensity (DSI) analysis showed that the DSI varied as a result of mask surface roughness. Operating the ABI under a review mode reduced that variation by 71 %, and therefore this operation was made available for precise DSI evaluation. The result also indicated that the defect capture rate was influenced by the DSI variation caused by mask surface roughness. A mask blank was inspected three times by the HVM ABI prototype, and impact of the detected native defects on wafer CD was evaluated. There was observed a pronounced relationship between the DSI and wafer CD; and this means that the ABI tool could detect wafer printable defects. Using the total DSI variation, the capture rate of the smallest defect critical for 16 nm node was estimated to be 93.2 %. This means that most of the critical defects for 16 nm node can be detected with the HVM ABI prototype.

  2. Evaluation of EUVL mask pattern defect inspection using 199nm inspection tool with super-resolution method

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Nishiyama, Yasushi; Suga, Osamu; Arisawa, Yukiyasu; Hashimoto, Hideaki; Takahara, Kenichi; Usuda, Kinya; Kikuiri, Nobutaka; Hirano, Ryoichi

    2009-04-01

    In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

  3. The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Nishiyama, Yasushi; Suga, Osamu; Terasawa, Tsuneo; Arisawa, Yukiyasu; Hashimoto, Hideaki; Kameya, Norio; Takeda, Masaya; Kikuiri, Nobutaka; Hirano, Ryoichi; Hirono, Masatoshi

    2008-10-01

    In this paper, we will report on our experimental and simulation results on the impact of EUVL mask absorber structure and of inspection system optics on mask defect detection sensitivity. We employed a commercial simulator EM-Suite (Panoramic Technology, Inc.) which calculated rigorously using FDTD (Finite-difference time-domain) method. By using various optical constants of absorber stacks, we calculated image contrasts and defect image signals as obtained from the mask defect inspection system. We evaluated the image contrast and the capability of detecting defects on the EUVL masks by using a new inspection tool made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect masks with LR-TaBN and LRTaSi absorbers were used which had various sized opaque and clear extension defects on hp-160nm, hp-225nm, and hp- 325nm line and space patterns. According to the analysis, reflectivity of EUVL mask absorber structures and the inspection optics have large influence on image contrast and defect sensitivity. It is very important to optimize absorber structure and inspection optics for the development of EUVL mask inspection technology, and for the improvement of performance of EUV lithographic systems.

  4. Analytical treatment of the deformation behavior of EUVL masks during electrostatic chucking

    NASA Astrophysics Data System (ADS)

    Brandstetter, Gerd; Govindjee, Sanjay

    2012-03-01

    A new analytical approach is presented to predict mask deformation during electro-static chucking in next generation extreme-ultraviolet-lithography (EUVL). Given an arbitrary profile measurement of the mask and chuck non-flatness, this method has been developed as an alternative to time-consuming finite element simulations for overlay error correction algorithms. We consider the feature transfer of each harmonic component in the profile shapes via linear elasticity theory and demonstrate analytically how high spatial frequencies are filtered. The method is compared to presumably more accurate finite element simulations and has been tested successfully in an overlay error compensation experiment, where the residual error y-component could be reduced by a factor 2. As a side outcome, the formulation provides a tool to estimate the critical pin-size and -pitch such that the distortion on the mask front-side remains within given tolerances. We find for a numerical example that pin-pitches of less than 5 mm will result in a mask pattern-distortion of less than 1 nm if the chucking pressure is below 30 kPa.

  5. Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

    NASA Astrophysics Data System (ADS)

    Shigemura, Hiroyuki; Amano, Tsuyoshi; Arisawa, Yukiyasu; Suga, Osamu; Hashimoto, Hideaki; Saito, Masanori; Takeda, Masaya; Kikuiri, Nobutaka; Hirano, Ryoichi

    2009-10-01

    In this paper, we will report on our experimental results on the impact of inspection system optics on mask defect detection sensitivity. We evaluated the capability of detecting defects on the EUVL masks by using a new inspection tool (NPI6000EUVα) made by NuFlare Technology, Inc. (NFT) and Advanced Mask Inspection Technology, Inc. (AMiT). This tool is based on NPI-5000 which is the leading-edge photomask defect inspection system using 199nm wavelength inspection optics. The programmed defect mask with LR-TaBN absorber was used which had various sized opaque and clear extension defects on hp-180nm, hp-128nm, and hp-108nm line and space patterns. According to the analysis, to obtain optimum sensitivity for various types of defects, using both C- and P-polarized illumination conditions were found to be effective. At present, sufficient defect-detection sensitivity is achieved for opaque and clear extension defects in hp128nm (hp32nm at wafer). For hp108nm (hp27nm at wafer), using both C- and P- polarized illumination is effective. However, further developments in defect-detection sensitivity are necessary.

  6. Report on EUVL Mask Substrate Development: Low-Expansion Substrate Finishing II

    SciTech Connect

    Tong, W.M.; Taylor, J.S.; Hector, S.D.; Shell, M.

    1999-12-08

    This report is a continuation of our assessment of the finishing of low thermal expansion material wafers obtained through three different commercial pathways. This quarter we have patterned and printed a ULE{reg_sign} wafer (Rodel 1) and saw no difference between its images and those from silicon wafer substrates. This further demonstrated that ULE{reg_sign} can be used as the EUVL mask substrate material. We have also evaluated substrates produced by three vendors: Hoya, General Optics, and Rodel. Consistent with our results reported last quarter, surface roughness of the bare substrates from all three companies does not depend on the position. For Hoya, the wafers it produced had a low roughness than those from last quarter. However, the cleanliness of the wafers needs to be improved. For General Optics, the wafer roughness has increased, and it was only able to deliver one wafer this quarter. General Optics will be replaced by Schott ML next quarter. For Rodel, one of its wafers (Rodel 1) that had been cleaned in-house showed excellent finishing and was selected to be patterned. We also observed that the sleeks on the substrates were smoothed by the ML coating. The other two Rodel wafers (Rodel 2 and Rodel 4) had too many defects and the roughness values derived from AFM are not reliable.

  7. Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC

    NASA Astrophysics Data System (ADS)

    Racette, Kenneth C.; Williams, Carey T.; Fisch, Emily; Kindt, Louis; Lawliss, Mark; Ackel, Robin; Lercel, Michael J.

    2002-07-01

    Fabricating masks for extreme ultraviolet lithography is challenging. The high absorption of most materials at 13.4 nm and the small critical dimension (45 nm) at the target insertion node force many new features, including reflective mask design, new film choices, and stringent defect specifications. Fabrication of these masks requires the formation and patterning of both a repair buffer layer and an EUV absorber layer on top of a molybdenum/silicon multi-layer substrate. IBM and Photronics have been engaged in developing mask processing technology for x-ray, electron beam projection and extreme ultraviolet lithographies at the Next Generation Lithography Mask Center of Competency (NGL-MCoC) within IBM's mask facility at Essex Junction, Vermont. This paper describes recent results of mask fabrication on 6 x 6 x 1/4 inch EUVL substrates (quartz with molybdenum silicon multi-layers) at the MCoC. Masks fabricated with high and low-stress chromium and externally deposited chromium absorber films are compared. In particular, etch characteristics, image size, image placement, line edge roughness, and defect levels are presented and compared. Understanding the influence of the absorber film characteristics on these parameters will enable us to optimize the effectiveness of a given absorber film or to select acceptable alternatives.

  8. Status of EUVL reticle chucking

    NASA Astrophysics Data System (ADS)

    Engelstad, Roxann L.; Sohn, Jaewoong; Zeuske, Jacob R.; Battula, Venkata Siva; Vukkadala, Pradeep; Van Peski, Chris K.; Orvek, Kevin J.; Turner, Kevin T.; Mikkelson, Andrew R.; Nataraju, Madhura

    2008-04-01

    Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. Successful implementation of this technology will depend upon advancements in many areas, including the quality of the mask system to control image placement errors. For EUVL, the nonflatness of both the mask and chuck is critical, due to the nontelecentric illumination during exposure. The industry is proposing to use an electrostatic chuck to support and flatten the mask in the exposure tool. The focus of this research is to investigate the clamping ability of a pin-type chuck, both experimentally and with the use of numerical simulation tools, i.e., finite element modeling. A status report on electrostatic chucking is presented, including the results obtained during repeatability studies and long-term chucking experiments.

  9. Experimental validation of a thermal model used to predict the image placement error of a scanned EUVL reticle

    NASA Astrophysics Data System (ADS)

    Gianoulakis, Steven E.; Craig, Marcus J.; Ray-Chaudhuri, Avijit K.

    2000-07-01

    Lithographic masks must maintain dimensional stability during exposure in a lithographic tool to minimize subsequent overlay errors. In extreme ultraviolet lithography (EUVL), multilayer coatings are deposited on a mask substrate to make the mask surface reflective at EUV wavelengths. About 40% of the incident EUV light is absorbed by the multilayer coating which leads to a temperature rise. The choice of mask substrate material and absorber affects the magnitude of thermal distortion. Finite element modeling has been used to investigate potential mask materials and to explore the efficiency of various thermal management strategies. An experimental program was conducted to validate the thermal models used to predict the performance of EUV reticles. The experiments closely resembled actual conditions expected within the EUV tool. A reticle instrumented with temperature sensors was mounted on a scanning stage with an electrostatic chuck. An actively cooled isolation plate was mounted in front of the reticle for thermal management. Experimental power levels at the reticle corresponding to production throughput levels were utilized in the experiments. Both silicon and low expansion glass reticles were tested. Temperatures were measured a several locations on the reticle and tracked over time as the illuminated reticle was scanned. The experimental results coupled with the predictive modeling capability validates that the assertion that the use of a low expansion glass will satisfy image placement error requirements down to the 30 nm lithographic node.

  10. Investigation and prediction of image placement errors in extreme ultraviolet lithography masks

    NASA Astrophysics Data System (ADS)

    Zheng, Liang

    2010-11-01

    According to the latest ITRS Roadmap, extreme ultraviolet lithography (EUVL) is expected to be one of the principal carriers for the IC production at sub-45 nm technology nodes. One of the most challenging tasks to fulfill EUVL is the fabrication of the EUVL mask in which the most important issue is the control of image placement errors. In this paper, the EUVL mask fabrication process was analyzed and image placement errors due to the fabrication process were investigated and predicted. A theoretical analysis was conducted to analytically benchmark the EUVL mask fabrication process. A line-and-space pattern (with pattern coverage of 50%) was employed in the theoretical analysis as an example. The theoretical deduction revealed that this 50% coverage pattern produces the same global response as a uniformly stressed thin film with half of the stress-thickness product of the patterned lines. Finite element (FE) models were established to simulate the EUVL mask fabrication process. In FE simulations, a new equivalent modeling technique was developed to predict the global distortions of the mask and the local distortions of the pattern features. Results indicate that for the EUVL mask with this line-and-space pattern (50% pattern coverage), the maximum image placement error is only about 10 nm, which is largely due to the application of a flat electrostatic chuck in both e-beam mounting and exposure chucking. Nonuniformities of either the mask or the electrostatic chuck will add to the final image placement errors of the EUVL mask.

  11. Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking

    NASA Astrophysics Data System (ADS)

    Ramaswamy, Vasu; Turner, Kevin T.; Engelstad, Roxann L.; Lovell, Edward G.

    2006-10-01

    Among the potential sources of image placement (IP) error for extreme ultraviolet lithography (EUVL) is the deformation of the mask during electrostatic chucking. This paper focuses on the in-plane and out-of-plane distortion of the EUVL reticle due to the entrapment of particles. Localized finite element (FE) models have been developed to simulate the micro response of the reticle / particle / chuck system. To identify the macro response, global FE models have been generated to simulate the system under typical chucking conditions. Parametric studies were performed to illustrate the effect of particle size on the final IP accuracy.

  12. Electrostatic chucking of EUVL reticles

    NASA Astrophysics Data System (ADS)

    Nataraju, Madhura; Sohn, Jaewoong; Mikkelson, Andrew R.; Engelstad, Roxann L.; Turner, Kevin T.; Van Peski, Chris K.; Orvek, Kevin J.

    2007-03-01

    Characterizing the effect of electrostatic chucking on the flatness of Extreme Ultraviolet Lithography (EUVL) reticles is necessary for the implementation of EUVL for the sub-32 nm node. In this research, finite element (FE) models have been developed to predict the flatness of reticles when clamped by a bipolar Coulombic pin chuck. Nonflatness measurements of the reticle and chuck surfaces were used to create the model geometry. Chucking was then simulated by applying forces consistent with the pin chuck under consideration. The effect of the nonuniformity of electrostatic forces due to the presence of gaps between the chuck and reticle backside surfaces was also included. The model predictions of the final pattern surface shape of the chucked reticle have been verified with chucking experiments and the results have established the validity of the models. Parametric studies with varying reticle shape, chuck shape, chuck geometry, and chucking pressure performed using FE modeling techniques are extremely useful in the development of SEMI standards for EUVL.

  13. Nikon EUVL development progress update

    NASA Astrophysics Data System (ADS)

    Miura, Takaharu; Murakami, Katsuhiko; Suzuki, Kazuaki; Kohama, Yoshiaki; Morita, Kenji; Hada, Kazunari; Ohkubo, Yukiharu; Kawai, Hidemi

    2008-03-01

    Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors. In this paper we would like to present our significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible, such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. Nikon has developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. The proto-type development of full-field projection optics has been successfully completed and its technical achievement has reflected into production optics. Preparation of complete set of production and metrology tools necessary for projection optics production was completed and all tools are now in full operation. Nikon has already developed dual pod reticle carrier for EUV1 tool. In parallel Nikon has been developing the same concept carrier for HVM in cooperation with Canon and Entegris. Regarding to EUV1 tool development, all modules of EUV1 such as full

  14. Process liability evaluation for EUVL

    NASA Astrophysics Data System (ADS)

    Aoyama, Hajime; Tawarayama, Kazuo; Tanaka, Yuusuke; Kawamura, Daisuke; Arisawa, Yukiyasu; Uno, Taiga; Kamo, Takashi; Tanaka, Toshihiko; Itani, Toshiro; Tanaka, Hiroyuki; Nakajima, Yumi; Inanami, Ryoichi; Takai, Kosuke; Murano, Koji; Koshiba, Takeshi; Hashimoto, Kohji; Mori, Ichiro

    2009-03-01

    This paper concerns the readiness of extreme ultraviolet lithography (EUVL) for high-volume manufacture based on accelerated development in critical areas and the construction of a process liability (PL) test site that integrates results in these areas. The overall lithography performance was determined from the performance of the exposure tool, the printability obtainable with the resist, mask fabrication with accurate critical dimension (CD) control, and correction technology for mask data preparation. The EUV1 exposure tool can carry out exposure over the full field (26 mm × 33 mm) at a resolution high enough for 32-nm line-and-space patterns when Selete Standard Resist 3 (SSR3) is used. Thus, the test site was designed for the full-field exposure of various pattern sizes [half-pitch (hp) 32-50 nm]. The CD variation of the mask was found to be as good as 2.8 nm (3σ) and only one printable defect was detected. The effect of flare on CD variation is a critical issue in EUVL; so flare was compensated for based on the point spread function for the projection optics of the EUV1 and aerial simulations that took resist blur into account. The accuracy obtained when an electronic design automation (EDA) tool was used for mask resizing was found to be very good (error <= +/-2 nm). Metal wiring patterns with a size of hp 32 nm were successfully formed by wafer processing. The production readiness of EUVL based on the integration of results in these areas was evaluated by electrical tests on low-resistance tungsten wiring. The yield for the electrically open test for hp 50 nm (32-nm logic node) and hp 40 nm (22-nm logic node) were found to be over 60% and around 50%, respectively; and the yield tended to decrease as patterns became smaller. We found the PL test site to be very useful for determining where further improvements need to be made and for evaluating the production readiness of EUVL.

  15. Optics and multilayer coatings for EUVL systems

    SciTech Connect

    Soufli, R; Bajt, S; Hudyma, R M; Taylor, J S

    2008-03-21

    EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is considered an extension of optical lithography, which is used for the high-volume manufacturing (HVM) of today's microprocessors. The EUV wavelength of illumination dictates the use of reflective optical elements (mirrors) as opposed to the refractive lenses used in conventional lithographic systems. Thus, EUVL tools are based on all-reflective concepts: they use multilayer (ML) coated optics for their illumination and projection systems, and they have a ML-coated reflective mask.

  16. Challenges and solutions ensuring EUVL photomask integrity

    NASA Astrophysics Data System (ADS)

    Brux, O.; Dreß, P.; Schmalfuß, H.; Jonckheere, R.; Koolen-Hermkens, W.

    2012-06-01

    Industry roadmaps indicate that the introduction of Extreme Ultraviolet Lithography (EUVL) is on track for high volume manufacturing. Although, there has been significant progress in each of the individual subsets of the EUVL infrastructure, the absolute management of the process outside of the scanner and up to the point-of-exposure has been highlighted as critical requirement for the adoption of EUVL. Significant changes in the EUV system environment and mask architecture are driving a zero process tolerance level. Any unforeseen contamination introduced to the scanner environment from the EUV mask could cause considerable downtime and yield loss. Absolute mask integrity at the point-of-exposure must be guaranteed. EUV mask cleaning processes-of-record have been developed and introduced to the industry [1]. The issue is not longer "how to clean the mask" but, "how to keep it clean". With the introduction of EUVL, mask cleanliness extends out beyond the traditional mask cleaning tool. Complete control of contamination and/or particles during transportation, handling and storage will require a holistic approach to mask management. A new environment specifically for EUV mask integrity must be developed and fully tested for the sub 16nm half-pitch node introduction. The SUSS MaskTrack Pro (MTP) InSync was introduced as the solution for EUV mask integrity. SUSS demonstrated the fully automated handling of EUV masks into and out of a Dual Pod System [2]. Intrinsic cleanliness of each individual handling and storage step of the inner pod (EIP) and EUV mask inside the MTP InSync Tool was investigated and reported. A target specification of a PRP <= 0.08 as criterion for the cross contamination between EIP and the EUV reticle during handling within MTP InSync has been achieved and therefore proofing the applicability for the Dual Pod automation. Moreover an appropriate automated handling, other aspects like backside particle contamination and EIP cleanliness plays a

  17. Accurate mask model for advanced nodes

    NASA Astrophysics Data System (ADS)

    Zine El Abidine, Nacer; Sundermann, Frank; Yesilada, Emek; Ndiaye, El Hadji Omar; Mishra, Kushlendra; Paninjath, Sankaranarayanan; Bork, Ingo; Buck, Peter; Toublan, Olivier; Schanen, Isabelle

    2014-07-01

    Standard OPC models consist of a physical optical model and an empirical resist model. The resist model compensates the optical model imprecision on top of modeling resist development. The optical model imprecision may result from mask topography effects and real mask information including mask ebeam writing and mask process contributions. For advanced technology nodes, significant progress has been made to model mask topography to improve optical model accuracy. However, mask information is difficult to decorrelate from standard OPC model. Our goal is to establish an accurate mask model through a dedicated calibration exercise. In this paper, we present a flow to calibrate an accurate mask enabling its implementation. The study covers the different effects that should be embedded in the mask model as well as the experiment required to model them.

  18. Nikon EUVL development progress update

    NASA Astrophysics Data System (ADS)

    Miura, Takaharu; Murakami, Katsuhiko; Suzuki, Kazuaki; Kohama, Yoshiaki; Morita, Kenji; Hada, Kazunari; Ohkubo, Yukiharu

    2007-03-01

    Extreme Ultra Violet Lithography (EUVL) has been widely regarded as the lithography technology to succeed optical lithography. It is now considered as one of the most promising technologies below hp45nm node [1], following ArF immersion lithography considering trend of achievable process K1 factors shown in Fig. 1. In this paper we would like to present significant progress on the development of EUV exposure tool. There are several key important areas which should be developed to realize EUVL to be feasible such as reflective mask, resist, and tool itself. The reflective mask features such characteristics as pellicle-less, ultra-smooth blank flatness and defect free. The resist should be of high sensitivity and small line edge roughness (LER) as well as fine resolution. EUV exposure tool itself consists of major modules such as EUV light source, projection optics, vacuum body, vacuum stages, and so on. As far as EUVL optics development is concerned, through the development of high-NA small-field EUV exposure system (HiNA) in conjunction with EUVA (Extreme Ultraviolet Lithography System Development Association) projects, we have developed new polishing technologies such as ion-beam figuring and elastic emission machining, and new ultra high-precision interferometers for aspheric surface metrology. Wave front sensor system has been also developed partly in EUVA project. A new wave front sensor system which can be used for evaluating the projection optics with EUV light has already been installed in New SUBARU synchrotron facility in University of Hyogo. Our multi-layer coating technology has been also improved. High reflective Mo/Si multi layer coating has been successfully achieved and irradiation tests using synchrotron radiation have been conducted [8]. Successful achievement of those developments enables us to produce full-field projection optics for EUVL process development tool called EUV1. Proto-type development of full-field projection optics has been

  19. Properties and performance of EUVL pellicle membranes

    NASA Astrophysics Data System (ADS)

    Gallagher, Emily E.; Vanpaemel, Johannes; Pollentier, Ivan; Zahedmanesh, Houman; Adelmann, Christoph; Huyghebaert, Cedric; Jonckheere, Rik; Lee, Jae Uk

    2015-10-01

    EUV mask protection during handling and exposure remains a challenge for high volume manufacturing using EUV scanners. A thin, transparent membrane can be mounted above the mask pattern so that any particle that falls onto the front of the mask is held out of focus and does not image. The fluoropolymer membranes that are compatible with 193nm lithography absorb too strongly at the 13.5nm EUV exposure wavelength to be considered. Initially, the industry planned to expose EUV masks without any pellicle; however, the time and cost of fabricating and qualifying an EUV mask is simply too high to risk decimating wafer yield each time a particle falls onto the mask pattern. Despite the challenges of identifying a membrane for EUV, the industry has returned to the pellicle concept for protection. EUVL pellicles have been in development for more than a decade and reasonable options exist. Meeting all pellicle requirements is difficult, so this type of risk-mitigation effort is needed to ensure that there is a viable high-volume manufacturing option. This paper first reviews the desired membrane properties for EUVL pellicles. Next, candidate materials are introduced based on reported properties and compatibility with fabrication. Finally a set of candidate membranes are fabricated. These membranes are screened using a simplified set of tests to assess their suitability as an EUV pellicle. EUV transmission, film stress, and film durability data are included. The results are presented along with general guidelines for pellicle membrane properties for EUV manufacturing.

  20. Optimization of EUVL reticle thickness for image placement accuracy

    NASA Astrophysics Data System (ADS)

    Zheng, Liang; Mikkelson, Andrew R.; Abdo, Amr Y.; Engelstad, Roxann L.; Lovell, Edward G.; White, Thomas J.

    2003-12-01

    Extreme ultraviolet lithography (EUVL) is one of the leading candidates for next-generation lithography in the sub-65 nm regime. The International Technology Roadmap for Semiconductors proposes overlay error budgets of 18 nm and 13 nm for the 45 nm and 32 nm nodes, respectively. Full three-dimensional finite element (FE) models were developed to identify the optimal mask thickness to minimize image placement (IP) errors. Five thicknesses of the EUVL reticle have been investigated ranging from 2.3 mm to 9.0 mm. The mask fabrication process was simulated, as well as the e-beam mounting, pattern transfer, and exposure mounting, utilizing FE structural models. Out-of-plane distortions and in-plane distortions were tracked for each process step. Both electrostatic and 3-point mounts were considered for the e-beam tool and exposure tool. In this case, increasing the thickness of the reticle will reduce the magnitude of the distortions. The effect of varying the reticle thickness on chucking was also studied. FE models were utilized to predict how changing the reticle thickness would affect the overall clamping response. By decreasing the reticle thickness (and therefore the effective bending stiffness), the deformed reticle is easier to flatten during chucking. In addition, the thermomechanical response of the reticle during exposure was investigated for different reticle thicknesses. Since conduction to the chuck is the main heat dissipation mechanism, decreasing the reticle thickness results in more energy being conducted away from the reticle, which reduces the maximum temperature rise and the corresponding thermal distortion. The FE simulations illustrate the optimal thickness to keep IP errors within the allotted error budget as well as provide the necessary flatness during typical chucking procedures.

  1. Evaluating Printability of Buried Native EUV Mask Phase Defects through a Modeling and Simulation Approach

    SciTech Connect

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-03-16

    The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect’s width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.

  2. Evaluating printability of buried native EUV mask phase defects through a modeling and simulation approach

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-03-01

    The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.

  3. Predicting wafer-level IP error due to particle-induced EUVL reticle distortion during exposure chucking

    NASA Astrophysics Data System (ADS)

    Ramaswamy, Vasu; Mikkelson, Andrew; Engelstad, Roxann; Lovell, Edward

    2005-11-01

    The mechanical distortion of an EUVL mask from mounting in an exposure tool can be a significant source of wafer-level image placement error. In particular, the presence of debris lodged between the reticle and chuck can cause the mask to experience out-of-plane distortion and in-plane distortion. A thorough understanding of the response of the reticle/particle/chuck system during electrostatic chucking is necessary to predict the resulting effects of such particle contamination on image placement accuracy. In this research, finite element modeling is employed to simulate this response for typical clamping conditions.

  4. A model of visual backward masking.

    PubMed

    Bugmann, Guido; Taylor, John G

    2005-01-01

    When two successive stimuli are presented within 0-200 ms intervals, the recognition of the first stimulus (the target) can be impaired by the second (the mask). This backward masking phenomenon has a form called metacontrast masking where the target and the mask are in close spatial proximity but not overlapping. In that case, the masking effect is strongest for interval of 60-100 ms. To understand this behaviour, activity propagation in a feedforward network of leaky integrate and fire neurons is investigated. It is found that, if neurons have a selectivity similar to that of V1 simple cells, activity decays layer after layer and ceases to propagate. To combat this, a local amplification mechanism is included in the model, using excitatory lateral connections, which turn out to support prolonged self-sustained activity. Masking is assumed to arise from local competition between representations recruited by the target and the mask. This tends to interrupt sustained firing, while prolonged retinal input tends to re-initiate it. Thus, masking causes a maximal reduction of the duration of the cortical response to the target towards the end of the retinal response. This duration exhibits the typical U-shape of the masking curve. In this model, masking does not alter the propagation of the onset of the response to the target, thus preserving response reaction times and enabling unconscious priming phenomena. PMID:15649600

  5. 100-Picometer Interferometry for EUVL

    SciTech Connect

    Sommargren, G E; Phillion, D W; Johnson, M A; Nguyen, N O; Barty, A; Snell, F J; Dillon, D R; Bradsher, L S

    2002-03-18

    Future extreme ultraviolet lithography (EWL) steppers will, in all likelihood, have six-mirror projection cameras. To operate at the diffraction limit over an acceptable depth of focus each aspheric mirror will have to be fabricated with an absolute figure accuracy approaching 100 pm rms. We are currently developing visible light interferometry to meet this need based on modifications of our present phase shifting diffraction interferometry (PSDI) methodology where we achieved an absolute accuracy of 250pm. The basic PSDI approach has been further simplified, using lensless imaging based on computational diffractive back-propagation, to eliminate auxiliary optics that typically limit measurement accuracy. Small remaining error sources, related to geometric positioning, CCD camera pixel spacing and laser wavelength, have been modeled and measured. Using these results we have estimated the total system error for measuring off-axis aspheric EUVL mirrors with this new approach to interferometry.

  6. Measuring and characterizing the nonflatness of EUVL reticles and electrostatic chucks

    NASA Astrophysics Data System (ADS)

    Engelstad, Roxann L.; Turner, Kevin T.; Nataraju, Madhura; Sohn, Jaewoong; Mikkelson, Andrew R.; Battula, Venkata Siva; Vukkadala, Pradeep; Zeuske, Jacob R.; Van Peski, Chris K.

    2007-10-01

    According to the International Technology Roadmap for Semiconductors, meeting the strict requirements on image placement errors in the sub-45-nm regime may be one of the most difficult challenges for the industry. For Extreme Ultraviolet Lithography (EUVL), the nonflatness of both the mask and chuck is critical as well, due to the nontelecentric illumination during exposure. To address this issue, SEMI Standards P37 and P40 have established the specifications on flatness for the EUVL mask substrate and electrostatic chuck. This study investigates the procedures for implementing the Standards when measuring and characterizing the shapes of these surfaces. Finite element simulations are used to demonstrate the difficulties in supporting the mask substrate, while ensuring that the measured flatness is accurate. Additional modeling is performed to illustrate the most appropriate methods of characterizing the nonflatness of the electrostatic chuck. The results presented will aid in identifying modifications and clarifications that are needed in the Standards to facilitate the timely development of EUV lithography.

  7. Simplified models for mask roughness induced LER

    SciTech Connect

    McClinton, Brittany; Naulleau, Patrick

    2011-02-21

    The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.

  8. An automated image-based tool for pupil plane characterization of EUVL tools

    NASA Astrophysics Data System (ADS)

    Levinson, Zac; Smith, Jack S.; Fenger, Germain; Smith, Bruce W.

    2016-03-01

    Pupil plane characterization will play a critical role in image process optimization for EUV lithography (EUVL), as it has for several lithography generations. In EUVL systems there is additional importance placed on understanding the ways that thermally-induced system drift affect pupil variation during operation. In-situ full pupil characterization is therefore essential for these tools. To this end we have developed Quick Inverse Pupil (QUIP)—a software suite developed for rapid characterization of pupil plane behavior based on images formed by that system. The software consists of three main components: 1) an image viewer, 2) the model builder, and 3) the wavefront analyzer. The image viewer analyzes CDSEM micrographs or actinic mask micrographs to measure either CDs or through-focus intensity volumes. The software is capable of rotation correction and image registration with subpixel accuracy. The second component pre-builds a model for a particular imaging system to enable rapid pupil characterization. Finally, the third component analyzes the results from the image viewer and uses the optional pre-built model for inverse solutions of pupil plane behavior. Both pupil amplitude and phase variation can be extracted using this software. Inverse solutions are obtained through a model based algorithm which is built on top of commercial rigorous full-vector simulation software.

  9. SEMATECH's EUV program: a key enabler for EUVL introduction

    NASA Astrophysics Data System (ADS)

    Wurm, Stefan; Jeon, Chan-Uk; Lercel, Michael

    2007-03-01

    With the introduction of alpha tools, extreme ultraviolet lithography (EUVL) has reached a key milestone. Users of those tools must have access to critical EUV infrastructure capabilities to evaluate the technology in a pilot line operation. In cooperation with universities, national laboratories, suppliers, integrated device manufacturers, and other industry consortia, SEMATECH has been spearheading the worldwide effort to develop this EUV infrastructure in the source, mask, optics, and resist areas. In the process, SEMATECH's Mask Blank Development Center, its EUV Resist Test Center, and the EUV expertise built within the SEMATECH EUV program have become key enablers for the successful introduction of EUV technology. We will highlight the significant contributions that the SEMATECH EUV Program has made, and continues to make, to the worldwide EUV infrastructure development effort. Moving beyond the alpha tool phase, the industry must have a clear understanding of the challenges that need to be addressed before EUV beta tools can be successfully introduced as early as 2009. We will identify those areas that still need a substantial effort to overcome technical and business challenges to meet 32 nm half-pitch requirements in time. Although some of those areas are clearly EUV-specific, others are generic and impact other lithography technologies as well. One of the major attractions of EUVL is that it is an extendible technology that can likely support patterning for several technology generations. We will review the outlook for EUVL technology extendibility and discuss what the industry needs to start working on to enable EUVL's bright future and long lifetime.

  10. Are Masking-Based Models of Risk Useful?

    PubMed

    Gisiner, Robert C

    2016-01-01

    As our understanding of directly observable effects from anthropogenic sound exposure has improved, concern about "unobservable" effects such as stress and masking have received greater attention. Equal energy models of masking such as power spectrum models have the appeal of simplicity, but do they offer biologically realistic assessments of the risk of masking? Data relevant to masking such as critical ratios, critical bandwidths, temporal resolution, and directional resolution along with what is known about general mammalian antimasking mechanisms all argue for a much more complicated view of masking when making decisions about the risk of masking inherent in a given anthropogenic sound exposure scenario. PMID:26610979

  11. Automated mask creation from a 3D model using Faethm.

    SciTech Connect

    Schiek, Richard Louis; Schmidt, Rodney Cannon

    2007-11-01

    We have developed and implemented a method which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micro-machining. The masks produced by this design tool can be generic, process independent masks, or if given process constraints, specific for a target process. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology of the model.

  12. Mask technology for EUV lithography

    NASA Astrophysics Data System (ADS)

    Bujak, M.; Burkhart, Scott C.; Cerjan, Charles J.; Kearney, Patrick A.; Moore, Craig E.; Prisbrey, Shon T.; Sweeney, Donald W.; Tong, William M.; Vernon, Stephen P.; Walton, Christopher C.; Warrick, Abbie L.; Weber, Frank J.; Wedowski, Marco; Wilhelmsen, Karl C.; Bokor, Jeffrey; Jeong, Sungho; Cardinale, Gregory F.; Ray-Chaudhuri, Avijit K.; Stivers, Alan R.; Tejnil, Edita; Yan, Pei-yang; Hector, Scott D.; Nguyen, Khanh B.

    1999-04-01

    Extreme UV Lithography (EUVL) is one of the leading candidates for the next generation lithography, which will decrease critical feature size to below 100 nm within 5 years. EUVL uses 10-14 nm light as envisioned by the EUV Limited Liability Company, a consortium formed by Intel and supported by Motorola and AMD to perform R and D work at three national laboratories. Much work has already taken place, with the first prototypical cameras operational at 13.4 nm using low energy laser plasma EUV light sources to investigate issues including the source, camera, electro- mechanical and system issues, photoresists, and of course the masks. EUV lithograph masks are fundamentally different than conventional photolithographic masks as they are reflective instead of transmissive. EUV light at 13.4 nm is rapidly absorbed by most materials, thus all light transmission within the EUVL system from source to silicon wafer, including EUV reflected from the mask, is performed by multilayer mirrors in vacuum.

  13. Extreme Ultraviolet Lithography - Reflective Mask Technology

    SciTech Connect

    Walton, C.C.; Kearney, P.A.; Mirkarimi, P.B.; Bowers, J.M.; Cerjan, C.; Warrick, A.L.; Wilhelmsen, K.; Fought, E.; Moore, C.; Larson, C.; Baker, S.; Burkhart, S.C.; Hector, S.D.

    2000-05-09

    EUVL mask blanks consist of a distributed Bragg reflector made of 6.7nm-pitch bi-layers of MO and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150mm substrates, it was upgraded in July, 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects >100nm below 0.05/cm{sup 2}. These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross-platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank

  14. Attentional gating models of object substitution masking.

    PubMed

    Põder, Endel

    2013-11-01

    Di Lollo, Enns, and Rensink (2000) proposed the computational model of object substitution (CMOS) to explain their experimental results with sparse visual maskers. This model supposedly is based on reentrant hypotheses testing in the visual system, and the modeled experiments are believed to demonstrate these reentrant processes in human vision. In this study, I analyze the main assumptions of this model. I argue that CMOS is a version of the attentional gating model and that its relationship with reentrant processing is rather illusory. The fit of this model to the data indicates that reentrant hypotheses testing is not necessary for the explanation of object substitution masking (OSM). Further, the original CMOS cannot predict some important aspects of the experimental data. I test 2 new models incorporating an unselective processing (divided attention) stage; these models are more consistent with data from OSM experiments. My modeling shows that the apparent complexity of OSM can be reduced to a few simple and well-known mechanisms of perception and memory. PMID:23106303

  15. Modeling Spatial and Temporal Aspects of Visual Backward Masking

    ERIC Educational Resources Information Center

    Hermens, Frouke; Luksys, Gediminas; Gerstner, Wulfram; Herzog, Michael H.; Ernst, Udo

    2008-01-01

    Visual backward masking is a versatile tool for understanding principles and limitations of visual information processing in the human brain. However, the mechanisms underlying masking are still poorly understood. In the current contribution, the authors show that a structurally simple mathematical model can explain many spatial and temporal…

  16. Thermomechanical global response of the EUVL wafer during exposure

    NASA Astrophysics Data System (ADS)

    Chang, Jaehyuk; Martin, Carl J.; Engelstad, Roxann L.; Lovell, Edward G.

    2002-07-01

    Extreme ultraviolet lithography (EUVL) is one of the leading technologies for Next-Generation Lithography. Continued progress in its development will be facilitated by characterizing all sources of distortion in the chip fabrication process. These include the thermal distortions of the wafer caused by deposited EUVL energy during scanning exposure. Absorbed energy from the beam produces temperature increases and structural displacements in the wafer, which directly contribute to pattern placement errors and image blur. Because of the vacuum conditions of EUVL systems, wafer chucking will be electrostatic, which has a number of advantages over mechanical clamping systems. The goals of this research are to predict the transient temperature increases and corresponding displacements (locally and globally) consistent with the thermomechanical boundary conditions of the wafer. Both thermal and structural finite element models were constructed to numerically simulate wafer exposure. The response of the wafer is relatively sensitive to the interface conditions between the substrate and electrostatic chuck. Thus, parametric studies of the response to changes in the contact conductance and the friction coefficient were performed and are presented in this paper.

  17. Optimization of electrostatic chuck for mask-blank flatness control in extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Shu, Emily Y.

    2007-05-01

    Overlay requirements of Extreme Ultra-violet Lithography (EUVL) dictate reticle flatness errors of 50nm or less. During the early phase of EUVL development, it was decided that an electrostatic chuck was required to flatten EUVL masks to these specifications. However current experience and test data have demonstrated that it will be very difficult to reach the desired mask flatness goal without a thorough understanding and advanced control of the echucking process. The results of a parametric model study are reported in this paper. In this study we calculated the chucking force dependence of activating voltage, e-chuck geometry, film material, and pin design, and then proposed an optimized chuck design. We have also engaged in a material study for the mask backside coating for the purpose of reducing flatness errors and minimizing backside particle generation. We have also designed and built an automated, vacuum based, interferometric metrology tool to enable e-chucking experimentation. An early status report of this tool will be included in this paper.

  18. Diffraction modelling of laser ablation using transmission masks

    NASA Astrophysics Data System (ADS)

    Dyer, P. E.; Mackay, J.; Walton, C. D.

    2004-10-01

    We present an analysis of near-field diffraction effects in ablation with transmission masks, based on coupling a simplified form of the Fresnel-Kirchhoff diffraction integral with basic models for material removal. Modelling for square, hexagonal and circular proximity masks is described and compared with previously reported experiments on glass, silicon and polyimide using excimer, femtosecond and CO2 lasers. The model has general applicability and can provide useful insight into the effect of near-field diffraction in ablation patterning.

  19. Masked Areas in Shear Peak Statistics: A Forward Modeling Approach

    NASA Astrophysics Data System (ADS)

    Bard, D.; Kratochvil, J. M.; Dawson, W.

    2016-03-01

    The statistics of shear peaks have been shown to provide valuable cosmological information beyond the power spectrum, and will be an important constraint of models of cosmology in forthcoming astronomical surveys. Surveys include masked areas due to bright stars, bad pixels etc., which must be accounted for in producing constraints on cosmology from shear maps. We advocate a forward-modeling approach, where the impacts of masking and other survey artifacts are accounted for in the theoretical prediction of cosmological parameters, rather than correcting survey data to remove them. We use masks based on the Deep Lens Survey, and explore the impact of up to 37% of the survey area being masked on LSST and DES-scale surveys. By reconstructing maps of aperture mass the masking effect is smoothed out, resulting in up to 14% smaller statistical uncertainties compared to simply reducing the survey area by the masked area. We show that, even in the presence of large survey masks, the bias in cosmological parameter estimation produced in the forward-modeling process is ≈1%, dominated by bias caused by limited simulation volume. We also explore how this potential bias scales with survey area and evaluate how much small survey areas are impacted by the differences in cosmological structure in the data and simulated volumes, due to cosmic variance.

  20. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  1. On-line simulations of models for backward masking.

    PubMed

    Francis, Gregory

    2003-11-01

    Five simulations of quantitative models of visual backward masking are available on the Internet at http://www.psych.purdue.edu/-gfrancis/Publications/BackwardMasking/. The simulations can be run in a Web browser that supports the Java programming language. This article describes the motivation for making the simulations available and gives a brief introduction as to how the simulations are used. The source code is available on the Web page, and this article describes how the code is organized. PMID:14748495

  2. Model of visual contrast gain control and pattern masking

    NASA Technical Reports Server (NTRS)

    Watson, A. B.; Solomon, J. A.

    1997-01-01

    We have implemented a model of contrast gain and control in human vision that incorporates a number of key features, including a contrast sensitivity function, multiple oriented bandpass channels, accelerating nonlinearities, and a devisive inhibitory gain control pool. The parameters of this model have been optimized through a fit to the recent data that describe masking of a Gabor function by cosine and Gabor masks [J. M. Foley, "Human luminance pattern mechanisms: masking experiments require a new model," J. Opt. Soc. Am. A 11, 1710 (1994)]. The model achieves a good fit to the data. We also demonstrate how the concept of recruitment may accommodate a variant of this model in which excitatory and inhibitory paths have a common accelerating nonlinearity, but which include multiple channels tuned to different levels of contrast.

  3. The difficult business model for mask equipment makers and mask infrastructure development support from consortia and governments

    NASA Astrophysics Data System (ADS)

    Hector, Scott

    2005-11-01

    The extension of optical projection lithography through immersion to patterning features with half pitch <=65 nm is placing greater demands on the mask. Strong resolution enhancement techniques (RETs), such as embedded and alternating phase shift masks and complex model-based optical proximity correction, are required to compensate for diffraction and limited depth of focus (DOF). To fabricate these masks, many new or upgraded tools are required to write patterns, measure feature sizes and placement, inspect for defects, review defect printability and repair defects on these masks. Beyond the significant technical challenges, suppliers of mask fabrication equipment face the challenge of being profitable in the small market for mask equipment while encountering significant R&D expenses to bring new generations of mask fabrication equipment to market. The total available market for patterned masks is estimated to be $2.5B to $2.9B per year. The patterned mask market is about 20% of the market size for lithography equipment and materials. The total available market for mask-making equipment is estimated to be about $800M per year. The largest R&D affordability issue arises for the makers of equipment for fabricating masks where total available sales are typically less than ten units per year. SEMATECH has used discounted cash flow models to predict the affordable R&D while maintaining industry accepted internal rates of return. The results have been compared to estimates of the total R&D cost to bring a new generation of mask equipment to market for various types of tools. The analysis revealed that affordability of the required R&D is a significant problem for many suppliers of mask-making equipment. Consortia such as SEMATECH and Selete have played an important role in cost sharing selected mask equipment and material development projects. Governments in the United States, in Europe and in Japan have also helped equipment suppliers with support for R&D. This paper

  4. Evaluation of a new model of mask topography effects

    NASA Astrophysics Data System (ADS)

    Pierrat, Christophe

    2010-09-01

    A new method for simulating mask topography effects is described. A model comprising a set of functions is generated based on the results of test patterns simulated using rigorous mask simulation. The functions are combined with the thin mask diffraction pattern in order to create a modeled thick mask diffraction pattern. The mask diffraction pattern is subsequently used in the lithosimTM simulation tool to generate the wafer image. Results are described for 1D and 2D test structures. The 1D test structures is a line and space test pattern where the line is set at 40nm width and the space is varied from 40nm to 1000nm. The illumination setting chosen was a TE polarized dipole illumination with a pole distance of 0.9 and a pole radius of 0.01. First the accuracy of the simulator itself was verified using thin mask calculation and comparing the data to another simulator. The intensity profiles are virtually identical. The RMS of the difference between the two plots is 8E-05. Next the model is compared to the rigorous calculation. The RMS of the difference between the two plots is 3E-03. The standard deviation of the CD difference between the model and the rigorous calculation, calculated for 5 thresholds (0.1, 0.11, 0.12, 0.13, and 0.14) and for all the structures, is 0.38nm. We also demonstrate that the mask model can be used with different optical settings by showing an example of two additional defocus values with an identical RMS of 3E-03. For the 2D test pattern made of a dense contact array, the mask fields are computed using rigorous calculation and compared to the model. The difference between the fields is within the error of the rigorous calculation. The resulting wafer images are almost identical. No re-scaling of the data was applied to either the mask fields or the wafer images.

  5. Mask roughness induced LER: geometric model at long correlation lengths

    SciTech Connect

    McClinton, Brittany M.; Naulleau, Patrick P.

    2011-02-11

    Collective understanding of how both the resist and line-edge roughness (LER) on the mask affect the final printed LER has made significant advances. What is poorly understood, however, is the extent to which mask surface roughness couples to image plane LER as a function of illumination conditions, NA, and defocus. Recently, progress has been made in formulating a simplified solution for mask roughness induced LER. Here, we investigate the LER behavior at long correlation lengths of surface roughness on the mask. We find that for correlation lengths greater than 3/NA in wafer dimensions and CDs greater than approximately 0.75/NA, the previously described simplified model, which remains based on physical optics, converges to a 'geometric regime' which is based on ray optics and is independent of partial coherence. In this 'geometric regime', the LER is proportional to the mask slope error as it propagates through focus, and provides a faster alternative to calculating LER in contrast to either full 2D aerial image simulation modeling or the newly proposed physical optics model. Data is presented for both an NA = 0.32 and an NA = 0.5 imaging system for CDs of 22-nm and 50-nm horizontal-line-dense structures.

  6. Low-defect reflective mask blanks for extreme ultraviolet lithography

    SciTech Connect

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Walton, C; Ray-Chaudhuri, A

    1999-03-11

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm² @ 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm² for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm² in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10-2/cm² level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.

  7. A model of selective masking in chromatic detection.

    PubMed

    Shepard, Timothy G; Swanson, Emily A; McCarthy, Comfrey L; Eskew, Rhea T

    2016-07-01

    Narrowly tuned, selective noise masking of chromatic detection has been taken as evidence for the existence of a large number of color mechanisms (i.e., higher order color mechanisms). Here we replicate earlier observations of selective masking of tests in the (L,M) plane of cone space when the noise is placed near the corners of the detection contour. We used unipolar Gaussian blob tests with three different noise color directions, and we show that there are substantial asymmetries in the detection contours-asymmetries that would have been missed with bipolar tests such as Gabor patches. We develop a new chromatic detection model, which is based on probability summation of linear cone combinations, and incorporates a linear contrast energy versus noise power relationship that predicts how the sensitivity of these mechanisms changes with noise contrast and chromaticity. With only six unipolar color mechanisms (the same number as the cardinal model), the new model accounts for the threshold contours across the different noise conditions, including the asymmetries and the selective effects of the noises. The key for producing selective noise masking in the (L,M) plane is having more than two mechanisms with opposed L- and M-cone inputs, in which case selective masking can be produced without large numbers of color mechanisms. PMID:27442723

  8. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  9. Phase-induced amplitude apodization complex mask coronagraph mask fabrication, characterization, and modeling for WFIRST-AFTA

    NASA Astrophysics Data System (ADS)

    Kern, Brian; Guyon, Olivier; Belikov, Ruslan; Wilson, Daniel; Muller, Richard; Sidick, Erkin; Balasubramanian, Bala; Krist, John; Poberezhskiy, Ilya; Tang, Hong

    2016-01-01

    This work describes the fabrication, characterization, and modeling of a second-generation occulting mask for a phase-induced amplitude apodization complex mask coronagraph, designed for use on the WFIRST-AFTA mission. The mask has many small features (˜micron lateral scales) and was fabricated at the Jet Propulsion Laboratory Microdevices Laboratory, then characterized using a scanning electron microscope, atomic force microscope, and optical interferometric microscope. The measured fabrication errors were then fed to a wavefront control model which predicts the contrast performance of a full coronagraph. The expected coronagraphic performance using this mask is consistent with observing ˜15 planetary targets with WFIRST-AFTA in a reasonable time (<1 day/target).

  10. System for generating two-dimensional masks from a three-dimensional model using topological analysis

    DOEpatents

    Schiek, Richard

    2006-06-20

    A method of generating two-dimensional masks from a three-dimensional model comprises providing a three-dimensional model representing a micro-electro-mechanical structure for manufacture and a description of process mask requirements, reducing the three-dimensional model to a topological description of unique cross sections, and selecting candidate masks from the unique cross sections and the cross section topology. The method further can comprise reconciling the candidate masks based on the process mask requirements description to produce two-dimensional process masks.

  11. Analysis of the mechanical response of extreme ultraviolet lithography masks during electrostatic chucking

    NASA Astrophysics Data System (ADS)

    Nataraju, Madhura

    Stringent flatness requirements have been imposed for the front and back surfaces of Extreme Ultraviolet Lithography (EUVL) masks to ensure successful pattern transfer that satisfies the image placement error budget. During exposure an electrostatic chuck will be used to support and flatten the mask. The EUVL Mask and Chucking Standards, SEMI P-37 and SEMI P-40, specify the flatness of the two mask surfaces as well as the chucking surface to be within about 50 nm peak-to-valley. It is critical that the electrostatic chucking process and its effect on mask flatness be well-understood. The principal objective of this thesis is to develop a model that predicts the electrostatic chucking response of masks and the resulting flatness of the pattern surface using FE techniques and to validate this model with chucking experiments. Studies are performed to evaluate the definition of flatness as given in the SEMI standards and a more efficient representation is suggested. Classical plate theory is used to illustrate the effect of chuck thickness and stiffness on the chucking response of masks. A basic FE model is developed to demonstrate that the sum of the chuck shape and thickness variation of the mask are crucial to the response of the mask during chucking. FE models are also developed to model clamping using a bipolar Coulombic pin chuck used for this research. The initial geometry of the mask and chuck surfaces are created using interferometric flatness data. Chucking is simulated by the application of forces between the mask backside and the chuck surface. The final pattern surface shape is compared with experimental electrostatic chucking results. An experimental set-up is developed to validate the FE model predictions. This consists of a Zygo interferometer mounted on top of an optical table, inside a cleanroom, with the chuck and mask placed inside a vacuum chamber. Once the voltage is turned on, the pattern surface nonflatness is measured using the interferometer

  12. Mask process matching using a model based data preparation solution

    NASA Astrophysics Data System (ADS)

    Dillon, Brian; Saib, Mohamed; Figueiro, Thiago; Petroni, Paolo; Progler, Chris; Schiavone, Patrick

    2015-10-01

    Process matching is the ability to precisely reproduce the signature of a given fabrication process while using a different one. A process signature is typically described as systematic CD variation driven by feature geometry as a function of feature size, local density or distance to neighboring structures. The interest of performing process matching is usually to address differences in the mask fabrication process without altering the signature of the mask, which is already validated by OPC models and already used in production. The need for such process matching typically arises from the expansion of the production capacity within the same or different mask fabrication facilities, from the introduction of new, perhaps more advanced, equipment to deliver same process of record masks and/or from the re-alignment of processes which have altered over time. For state-of-the-art logic and memory mask processes, such matching requirements can be well below 2nm and are expected to reduce below 1nm in near future. In this paper, a data preparation solution for process matching is presented and discussed. Instead of adapting the physical process itself, a calibrated model is used to modify the data to be exposed by the source process in order to induce the results to match the one obtained while running the target process. This strategy consists in using the differences among measurements from the source and target processes, in the calibration of a single differential model. In this approach, no information other than the metrology results is required from either process. Experimental results were obtained by matching two different processes at Photronics. The standard deviation between both processes was of 2.4nm. After applying the process matching technique, the average absolute difference between the processes was reduced to 1.0nm with a standard deviation of 1.3nm. The methods used to achieve the result will be described along with implementation considerations, to

  13. EUV mask and chuck analysis: simulation and experimentation

    NASA Astrophysics Data System (ADS)

    Nataraju, Madhura; Sohn, Jaewoong; Mikkelson, Andrew R.; Turner, Kevin T.; Engelstad, Roxann L.; Van Peski, Chris K.

    2006-03-01

    Extreme ultraviolet (EUV) masks and mask chucks require extreme flatness in order to meet the performance and timing specified by the International Technology Roadmap for Semiconductors (ITRS). The EUVL Mask and Chucking Standards, SEMI P37 and SEMI P40, specify the nonflatness of the mask frontside and backside, as well as the chucking surface, to be no more than 50 nm peak-to-valley (p-v). Understanding and characterizing the clamping ability of the electrostatic chuck and its effect on the mask flatness is a critical issue. In the present study, chucking experiments were performed using an electrostatic pin chuck and finite element (FE) models were developed to simulate the chucking. The frontside and backside surface flatness of several EUV substrates were measured using a Zygo large-area interferometer. Flatness data for the electrostatic chuck was also obtained and this data along with the substrate flatness data was used as the input for the FE modeling. Data from one substrate was selected for modeling and testing and is included in this paper. Electrostatic chucking experiments were conducted in a clean-room facility to minimize contamination due to particles. The substrate was chucked using an electrostatic pin chuck and the measured flatness was compared to the predictions obtained from the FE simulation.

  14. Calibration of a Spatial-Temporal Discrimination Model from Forward, Simultaneous, and Backward Masking

    NASA Technical Reports Server (NTRS)

    Ahumada, Albert J.; Beard, B. L.; Stone, Leland (Technical Monitor)

    1997-01-01

    We have been developing a simplified spatial-temporal discrimination model similar to our simplified spatial model in that masking is assumed to be a function of the local visible contrast energy. The overall spatial-temporal sensitivity of the model is calibrated to predict the detectability of targets on a uniform background. To calibrate the spatial-temporal integration functions that define local visible contrast energy, spatial-temporal masking data are required. Observer thresholds were measured (2IFC) for the detection of a 12 msec target stimulus in the presence of a 700 msec mask. Targets were 1, 3 or 9 c/deg sine wave gratings. Masks were either one of these gratings or two of them combined. The target was presented in 17 temporal positions with respect to the mask, including positions before, during and after the mask. Peak masking was found near mask onset and offset for 1 and 3 c/deg targets, while masking effects were more nearly uniform during the mask for the 9 c/deg target. As in the purely spatial case, the simplified model can not predict all the details of masking as a function of masking component spatial frequencies, but overall the prediction errors are small.

  15. Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

    2015-07-01

    High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

  16. Mask roughness induced LER control and mitigation: aberrations sensitivity study and alternate illumination scheme

    NASA Astrophysics Data System (ADS)

    McClinton, Brittany M.; Naulleau, Patrick P.

    2011-04-01

    Here we conduct a mask-roughness-induced line-edge-roughness (LER) aberrations sensitivity study both as a random distribution amongst the first 16 Fringe Zernikes (for overall aberration levels of 0.25, 0.50, and 0.75nm rms) as well as an individual aberrations sensitivity matrix over the first 37 Fringe Zernikes. Full 2D aerial image modeling for an imaging system with NA = 0.32 was done for both the 22-nm and 16-nm half-pitch nodes on a rough mask with a replicated surface roughness (RSR) of 100 pm and a correlation length of 32 nm at the nominal extreme-ultraviolet lithography (EUVL) wavelength of 13.5nm. As the ideal RSR value for commercialization of EUVL is 50 pm and under, and furthermore as has been shown elsewhere, a correlation length of 32 nm of roughness on the mask sits on the peak LER value for an NA = 0.32 imaging optic, these mask roughness values and consequently the aberration sensitivity study presented here, represent a worst-case scenario. The illumination conditions were chosen based on the possible candidates for the 22-nm and 16-nm half-pitch nodes, respectively. In the 22-nm case, a disk illumination setting of σ = 0.50 was used, and for the 16-nm case, crosspole illumination with σ = 0.10 at an optimum offset of dx = 0 and dy = .67 in sigma space. In examining how to mitigate mask roughness induced LER, we considered an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a "strip". While this illumination surprisingly provides minimal improvement to the LER as compared to several alternate illumination schemes, the overall imaging quality in terms of image-log-slope (ILS) and contrast is improved.

  17. Mask roughness induced LER control and mitigation: aberrations sensitivity study and alternate illumination scheme

    SciTech Connect

    McClinton, Brittany M.; Naulleau, Patrick P.

    2011-03-11

    Here we conduct a mask-roughness-induced line-edge-roughness (LER) aberrations sensitivity study both as a random distribution amongst the first 16 Fringe Zernikes (for overall aberration levels of 0.25, 0.50, and 0.75nm rms) as well as an individual aberrations sensitivity matrix over the first 37 Fringe Zernikes. Full 2D aerial image modeling for an imaging system with NA = 0.32 was done for both the 22-nm and 16-nm half-pitch nodes on a rough mask with a replicated surface roughness (RSR) of 100 pm and a correlation length of 32 nm at the nominal extreme-ultraviolet lithography (EUVL) wavelength of 13.5nm. As the ideal RSR value for commercialization of EUVL is 50 pm and under, and furthermore as has been shown elsewhere, a correlation length of 32 nm of roughness on the mask sits on the peak LER value for an NA = 0.32 imaging optic, these mask roughness values and consequently the aberration sensitivity study presented here, represent a worst-case scenario. The illumination conditions were chosen based on the possible candidates for the 22-nm and 16-nm half-pitch nodes, respectively. In the 22-nm case, a disk illumination setting of {sigma} = 0.50 was used, and for the 16-nm case, crosspole illumination with {sigma} = 0.10 at an optimum offset of dx = 0 and dy = .67 in sigma space. In examining how to mitigate mask roughness induced LER, we considered an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a 'strip'. While this illumination surprisingly provides minimal improvement to the LER as compared to several alternate illumination schemes, the overall imaging quality in terms of image-log-slope (ILS) and contrast is improved.

  18. A patch-based cross masking model for natural images with detail loss and additive defects

    NASA Astrophysics Data System (ADS)

    Liu, Yucheng; Allebach, Jan P.

    2015-03-01

    Visual masking is an effect that contents of the image reduce the detectability of a given target signal hidden in the image. The effect of visual masking has found its application in numerous image processing and vision tasks. In the past few decades, numerous research has been conducted on visual masking based on models optimized for artificial targets placed upon unnatural masks. Over the years, there is a tendency to apply masking model to predict natural image quality and detection threshold of distortion presented in natural images. However, to our knowledge few studies have been conducted to understand the generalizability of masking model to different types of distortion presented in natural images. In this work, we measure the ability of natural image patches in masking three different types of distortion, and analyse the performance of conventional gain control model in predicting the distortion detection threshold. We then propose a new masking model, where detail loss and additive defects are modeled in two parallel vision channels and interact with each other via a cross masking mechanism. We show that the proposed cross masking model has better adaptability to various image structures and distortions in natural scenes.

  19. Techniques to measure force uniformity of electrostatic chucks for EUV mask clamping

    NASA Astrophysics Data System (ADS)

    Veeraraghavan, Sathish; Sohn, Jaewoong; Turner, Kevin T.

    2007-10-01

    Extreme ultraviolet lithography (EUVL) has stringent requirements on image placement (IP) errors in order to allow for the patterning of devices with critical dimensions (CD) in the sub-32 nm regime. A major contributor to IP error in EUVL is non-flatness of the mask. Electrostatic chucks are used to support and flatten masks in EUVL scanners. Proper operation requires that the electrostatic forces generated by the chuck be of sufficient magnitude and be uniform over the entire chucking area. Hence, there is a need to measure the clamping pressure distribution to properly characterize performance of electrostatic chucks. This paper discusses two methods to measure electrostatic pressure magnitude and uniformity by examining the distortion of thin substrates (wafers) during chucking. In the first method, a wafer with lithographically defined mesas is chucked with the mesas located at the interface between the wafer and the chuck and thus results in a void near the mesa after chucking. Analytical and finite element models were used to relate the resulting void radius to the electrostatic pressure and used to assess the feasibility of the technique. Measurements of pressure on a slab chuck were conducted to demonstrate the mesa measurement approach. The second measurement method examines the deflection of a wafer between pins on a pin chuck in order to estimate the local pressure. A 3D FE model was developed to predict the deformation of the wafer between the pins as a function of applied pressure. The model was used to assess the feasibility of the approach and provide guidance on selecting appropriate substrates for use in such experiments.

  20. Analysis of a relation between the spatial frequency of electrostatic chuck and induced mask inplane distortion (IPD)

    NASA Astrophysics Data System (ADS)

    Yamamoto, Takeshi; Ota, Kazuya; Nishimura, Naosuke; Warisawa, Shin'ichi; Ishihara, Sunao

    2009-03-01

    Due to potential applications of Extreme Ultraviolet Lithography (EUVL) to 22 nm half-pitch (hp) generations, EUVL is well researched. However, current SEMI standards about the chuck are based on only the local slope of roughness. Herein chuck standards, which consider the spatial frequency of the chuck surface roughness as well as the local slope of the shape, are proposed by examining the chuck roughness. To prevent a mask pattern shift when an EUVL mask is clamped by an electrostatic chuck, the roughness height must be limited. Thus, the in-plane distortion (IPD) and out-of-plane distortion (OPD) are introduced to evaluate the mask pattern shift. This research utilizes ANSYS to evaluate the relationship between the spatial frequency of chuck roughness and IPD/OPD induced on the mask surface after an EUVL mask is clamped by the chuck. The IPD depends on the local slope of the surface roughness shape of the electrostatic chuck (ESC) as well as the spatial frequency of the roughness. Therefore, re-polishing the chuck surface can decrease IPD. Moreover, the spatial frequency of roughness must be considered when a mask pattern shift correction is performed according to the surface roughness shape of the EUVL mask and ESC.

  1. Mechanisms of Masked Priming: Testing the Entry Opening Model

    ERIC Educational Resources Information Center

    Wu, Hongmei

    2012-01-01

    Since it was introduced in Forster and Davis (1984), masked priming has been widely adopted in the psycholinguistic research on visual word recognition, but there has been little consensus on its actual mechanisms, i.e. how it occurs and how it should be interpreted. This dissertation addresses two different interpretations of masked priming, one…

  2. Modeling and Observations of Phase-Mask Trapezoidal Profiles with Grating-Fiber Image Reproduction

    NASA Technical Reports Server (NTRS)

    Lyons, Donald R.; Lindesay, James V.; Lee, Hyung R.; Ndlela, Zolili U.; Thompso, Erica J.

    2000-01-01

    We report on an investigation of the trapezoidal design and fabrication defects in phase masks used to produce Bragg reflection gratings in optical fibers. We used a direct visualization technique to examine the nonuniformity of the interference patterns generated by several phase masks. Fringe patterns from the phase masks are compared with the analogous patterns resulting from two-beam interference. Atomic force microscope imaging of the actual phase gratings that give rise to anomalous fringe patterns is used to determine input parameters for a general theoretical model. Phase masks with pitches of 0.566 and 1.059 microns are modeled and investigated.

  3. Automated surface micro-machining mask creation from a 3D model.

    SciTech Connect

    Schiek, Richard Louis; Schmidt, Rodney Cannon

    2004-06-01

    We have developed and implemented a method, which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micromachining. The masks produced by this design tool can be generic, process independent masks, or if given process constraints, specific for a target process. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology to the model. The 3D model is first separated into bodies that are non-intersecting, made from different materials or only linked through a ground plane. Next, for each body unique vertical cross sections are located and arranged into a tree based on their topological relationship. A branch-wise search of the tree uncovers locations where deposition boundaries must lie and identifies candidate masks creating a generic mask set for the 3D model. Finally, in the last step specific process requirements are considered that may constrain the generic mask set. Constraints can include the thickness or number of deposition layers, specific ordering of masks as required by a process and type of material used in a given layer. Candidate masks are reconciled with the process constraints through a constrained optimization.

  4. EUVL defect printability: an industry challenge

    NASA Astrophysics Data System (ADS)

    Kwon, Hyuk Joo; Teki, Ranganath; Harris-Jones, Jenah; Cordes, Aaron

    2012-02-01

    Extreme ultraviolet (EUV) patterning appears feasible using currently available EUV exposure tools, but some issues must still be resolved for EUV patterning to be used in production. Defects in EUV mask blanks are one such major issue, as evidenced by the research focused on defect printability. Inspection tools are needed to detect phase defects on EUV mask blanks that could possibly print on the wafer. Currently available inspection tools can capture defects on the mask, but they also need to be able to classify possible printable defects. Defect classification for repair and mitigation of printable defects is very difficult using DUV inspection tools; however, if the actinic inspection tool (AIT) could gather defect information from more multilayer stacks, it may be able to separate printable defects from unprintable defects. If unprintable defects could be eliminated, the defect information could be used for mask pattern shifts to reduce printable defects. Fewer defects would need to be repaired if there were a better chance of capturing printable defects using an actinic inspection tool. Being able to detect printable defects on EUV blanks is therefore critical in mask making. In this paper, we describe the characterization of native phase defects in the manufacturing of EUV mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). Commercially available quartz substrates were used and Mo/Si multilayers were deposited on the substrates to characterize phase defects. Programmed defects of various dimensions were also prepared using e-beam patterning technology on which multilayers were deposited. Transmission electron microscopy (TEM) was used to study multilayer profile changes, while SEMATECH's AIT was used to image defects and predict their printability. A defect library for native defects and printability of programmed phase defects is introduced. Finally technical challenges for EUV defect

  5. Automated and integrated mask generation from a CAD constructed 3D model.

    SciTech Connect

    Schiek, Richard Louis; Schmidt, Rodney Cannon

    2005-03-01

    We have developed and implemented a method which given a three-dimensional object can infer from topology the two-dimensional masks needed to produce that object with surface micromachining. This design tool calculates the two-dimensional mask set required to produce a given three-dimensional model by investigating the vertical topology to the model. The 3D model is first separated into bodies that are non-intersecting, made from different materials or only linked through a ground plane. Next, for each body unique horizontal cross sections are located and arranged into a tree based on their topological relationship. A branch-wise search of the tree uncovers locations where deposition boundaries must lie and identifies candidate masks creating a generic mask set for the 3D model. Finally, in the last step specific process requirements are considered that may constrain the generic mask set.

  6. Experiments on the Fehrer-Raab effect and the 'Weather Station Model' of visual backward masking.

    PubMed

    Neumann, Odmar; Scharlau, Ingrid

    2007-11-01

    The Fehrer-Raab effect (simple reaction time is unaffected by metacontrast masking of the test stimulus) seems to imply that a stimulus can trigger a voluntary reaction without reaching a conscious representation. However, it is also possible that the mask triggers the reaction, and that the masked test stimulus causes a focussing of attention from which processing of the mask profits, thus reaching conscious representation earlier. This is predicted by the Weather Station Model of visual masking. Three experiments tested this explanation. Experiment 1 showed that the masked test stimulus caused a temporal shift of the mask. Experiment 2 showed that the reaction in the Fehrer-Raab effect was not exclusively triggered by a conscious representation of the test stimulus: the mask was involved in evoking the reaction. Experiment 3 again revealed a temporal shift of the mask. However, the shift was only about half as large as the Fehrer-Raab effect. The psychometric functions suggested that the observers used two different cues for their temporal order judgments. The results cast doubts on whether judged temporal order yields a direct estimate of the time of conscious perception. Some methodological alternatives are discussed. PMID:16715303

  7. Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

    SciTech Connect

    Yan, Pei-Yang; Zhang, Guojing; Gullickson, Eric M.; Goldberg, Kenneth A.; Benk, Markus P.

    2015-03-01

    Extreme ultraviolet lithography (EUVL) mask multi-layer (ML) blank surface roughness specification historically comes from blank defect inspection tool requirement. Later, new concerns on ML surface roughness induced wafer pattern line width roughness (LWR) arise. In this paper, we have studied wafer level pattern LWR as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool. We found that the blank surface roughness induced LWR at current blank roughness level is in the order of 0.5nm 3σ for NA=0.42 at the best focus. At defocus of ±40nm, the corresponding LWR will be 0.2nm higher. Further reducing EUVL mask blank surface roughness will increase the blank cost with limited benefit in improving the pattern LWR, provided that the intrinsic resist LWR is in the order of 1nm and above.

  8. Coatings on reflective mask substrates

    DOEpatents

    Tong, William Man-Wai; Taylor, John S.; Hector, Scott D.; Mangat, Pawitter J. S.; Stivers, Alan R.; Kofron, Patrick G.; Thompson, Matthew A.

    2002-01-01

    A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

  9. A novel model building flow for the simulation of proximity effects of mask processes

    NASA Astrophysics Data System (ADS)

    Mas, Jonathan; Mittermeier, Engelbert

    2007-02-01

    Linearity- and proximity effects are present on actual masks even if manufactured with current state-of-the-art mask processes. Currently the mask writers rectify the difference on the target critical dimension generated by these effects by changing the dose in function of the density of the pattern. However, the accuracy of this compensation is limited resulting in a deviation dependent of the critical dimensions (CD) from the design. The consequences of these mask imperfections on the photolithographic results on the wafer get increasingly into focus with each shrink in the semiconductor technology. In this paper we will present a procedure for building mask proximity simulation models. In a first part this new flow will be introduced, then one application on the Electron beam lithography modelling is exposed.

  10. A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection

    SciTech Connect

    Huh, S.; Ren, L.; Chan, D.; Wurm, S.; Goldberg, K. A.; Mochi, I.; Nakajima, T.; Kishimoto, M.; Ahn, B.; Kang, I.; Park, J.-O.; Cho, K.; Han, S.-I.; Laursen, T.

    2010-03-12

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.

  11. Masked Translation Priming with Semantic Categorization: Testing the Sense Model

    ERIC Educational Resources Information Center

    Wang, Xin; Forster, Kenneth I.

    2010-01-01

    Four experiments are reported which were designed to test hypotheses concerning the asymmetry of masked translation priming. Experiment 1 confirmed the presence of L2-L1 priming with a semantic categorization task and demonstrated that this effect was restricted to exemplars. Experiment 2 showed that the translation priming effect was not due to…

  12. Mask process simulation for mask quality improvement

    NASA Astrophysics Data System (ADS)

    Takahashi, Nobuyasu; Goto, So; Tsunoda, Dai; Shin, So-Eun; Lee, Sukho; Shon, Jungwook; Park, Jisoong

    2015-10-01

    Demand for mask process correction (MPC) is growing facing the 14nm era. We have developed model based MPC and can generate mask contours by using this mask process model. This mask process model consists of EB (development) and etch, which employs a threshold (level set) model and a variable bias model respectively. The model calibration tool accepts both CD measurement results and SEM images. The simulation can generate mask image (contour), runs with distributed computing resources, and has scalable performance. The contour simulation shows the accuracy of the MPC correction visually and provides comprehensive information about hot spots in mask fabrication. Additionally, it is possible to improve lithography simulation quality by providing a simulated mask contour. In this paper, accuracy and computational performance of mask process simulation are shown. The focus is on the difference between the calibration methods using CDs or images.

  13. Actinic review of EUV masks: Status and recent results of the AIMS EUV system

    NASA Astrophysics Data System (ADS)

    Weiss, Markus R.; Hellweg, Dirk; Koch, Markus; Peters, Jan Hendrik; Perlitz, Sascha; Garetto, Anthony; Magnusson, Krister; Capelli, Renzo; Jindal, Vibhu

    2015-03-01

    The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. To realize such an actinic review tool, Carl Zeiss and the SEMATECH EUVL Mask Infrastructure consortium started a development program for an EUV aerial image metrology system, the AIMS™ EUV. In this paper, we discuss the current status of the prototype integration and show recent results.

  14. Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Gallagher, Emily; Seki, Kazunori; McIntyre, Gregory; Konishi, Toshio; Kodera, Yutaka; Redding, Vincent

    2013-06-01

    EUV wavelength inspection tools are several years away from product release. Until then, the EUV Lithography (EUVL) community faces the challenge of inspecting EUV masks at non-actinic wavelengths. It is critical to understand how to improve mask inspectability and defect sensitivity. The absorber stack is one contributor, since changing the film stack modifies image contrast. To study the effect, masks were fabricated from three different film stacks on which the thickness of the low reflective and absorber layers vary. These three absorbers are identified in this paper as Type A, Type B and Type C. All blanks had the same Ru-capped multi-layer substrate beneath the absorber stack. Inspection contrast, defect sensitivity and inspectability were measured on a 193nm wavelength inspection tool. The focus of this paper will be on inspection at the 193nm wavelength; however, simulated wafer results at the 13.5 nm EUV exposure wavelength will be included to anchor the relevance of the mask inspection results. A comparison of the different absorber stacks, the ability to detect defects on the various masks, and how defects on these substrates prints on wafer will be provided. This work addresses the gap between EUVL mask inspection and wafer defect printability and how the two views differ relative to various absorber stacks.

  15. An improved virtual aberration model to simulate mask 3D and resist effects

    NASA Astrophysics Data System (ADS)

    Kanaya, Reiji; Fujii, Koichi; Imai, Motokatsu; Matsuyama, Tomoyuki; Tsuzuki, Takao; Lin, Qun Ying

    2015-03-01

    As shrinkage of design features progresses, the difference in best focus positions among different patterns is becoming a fatal issue, especially when many patterns co-exist in a layer. The problem arises from three major factors: aberrations of projection optics, mask 3D topography effects, and resist thickness effects. Aberrations in projection optics have already been thoroughly investigated, but mask 3D topography effects and resist thickness effects are still under study. It is well known that mask 3D topography effects can be simulated by various Electro-magnetic Field (EMF) analysis methods. However, it is almost impossible to use them for full chip modeling because all of these methods are extremely computationally intensive. Consequently, they usually apply only to a limited range of mask patterns which are about tens of square micro meters in area. Resist thickness effects on best focus positions are rarely treated as a topic of lithography investigations. Resist 3D effects are treated mostly for resist profile prediction, which also requires an intensive EMF analysis when one needs to predict it accurately. In this paper, we present a simplified Virtual Aberration (VA) model to simulate both mask 3D induced effects and resist thickness effects. A conventional simulator, when applied with this simplified method, can factor in both mask 3D topography effects and resist thickness effects. Thus it can be used to model inter-pattern Best Focus Difference (BFD) issues with the least amount of rigorous EMF analysis.

  16. Neonatal resuscitation 3: manometer use in a model of face mask ventilation

    PubMed Central

    O'Donnell, C; Davis, P; Lau, R; Dargaville, P; Doyle, L; Morley, C

    2005-01-01

    Background: Adequate ventilation is the key to successful neonatal resuscitation. Positive pressure ventilation (PPV) is initiated with manual ventilation devices via face masks. These devices may be used with a manometer to measure airway pressures delivered. The expiratory tidal volume measured at the mask (VTE(mask)) is a good estimate of the tidal volume delivered during simulated neonatal resuscitation. Aim: To assess the effect of viewing a manometer on the peak inspiratory pressures used, the volume delivered, and leakage from the face mask during PPV with two manual ventilation devices in a model of neonatal resuscitation. Methods: Participants gave PPV to a modified resuscitation mannequin using a Laerdal infant resuscitator and a Neopuff infant resuscitator at specified pressures ensuring adequate chest wall excursion. Each participant gave PPV to the mannequin with each device twice, viewing the manometer on one occasion and unable to see the manometer on the other. Data from participants were averaged for each device used with the manometer and without the manometer separately. Results: A total of 7767 inflations delivered by the 18 participants were recorded and analysed. Peak inspiratory pressures delivered were lower with the Laerdal device. There were no differences in leakage from the face mask or volumes delivered. Whether or not the manometer was visible made no difference to any measured variable. Conclusions: Viewing a manometer during PPV in this model of neonatal resuscitation does not affect the airway pressure or tidal volumes delivered or the degree of leakage from the face mask. PMID:15871988

  17. Optimization of mask manufacturing rule check constraint for model based assist feature generation

    NASA Astrophysics Data System (ADS)

    Shim, Seongbo; Kim, Young-chang; Chun, Yong-jin; Lee, Seong-Woo; Lee, Suk-joo; Choi, Seong-woon; Han, Woo-sung; Chang, Seong-hoon; Yoon, Seok-chan; Kim, Hee-bom; Ki, Won-tai; Woo, Sang-gyun; Cho, Han-gu

    2008-11-01

    space restriction. The test mask for this experimental work includes not only typical split patterns but also real device patterns that are generated by in-house model-based assist feature generation tool. We analyzed the mask writing result for typical patterns and compared the simulation result, and wafer result for real device patterns.

  18. DIET Processes on Ruthenium Surfaces Related to Extreme Ultraviolet Lithography (EUVL)

    SciTech Connect

    Yakshinskiy, B.; Wasielewski, R; Loginova, E; Hedhili, M; Madey, T

    2008-01-01

    The aim of this work is to provide insights into desorption induced by electronic transitions (DIET) processes that affect the reflectivity of ruthenium-capped Mo/Si multilayer mirrors working under EUVL (extreme ultraviolet lithography) operating conditions (high vacuum, and 13.5 nm (92 eV) photons). Critical issues are associated with possible oxidation of the 2 nm thick Ru capping layer due to the inevitable background pressure of H{sub 2}O, and carbon build up due to background hydrocarbons. In the present work, we discuss aspects of the radiation-induced surface chemistry of Ru irradiated by 100 eV electrons and 92 eV photons. The cross section for electron-stimulated desorption of oxygen from O-covered Ru is 6 x 10{sup -19} cm{sup 2}. Carbon accumulation several nm thick occurs on the Ru surface during electron irradiation in methyl methacrylate (MMA) vapor, a model background impurity hydrocarbon. Radiation damage by low-energy secondary electrons is believed to dominate over direct photoexcitation of adsorbates under EUVL conditions. The secondary electron yield from Ru varies strongly with photon energy, and is 0.02 electrons/photon at 92 eV.

  19. DIET processes on ruthenium surfaces related to extreme ultraviolet lithography (EUVL)

    NASA Astrophysics Data System (ADS)

    Yakshinskiy, B. V.; Wasielewski, R.; Loginova, E.; Hedhili, M. N.; Madey , T. E.

    2008-10-01

    The aim of this work is to provide insights into desorption induced by electronic transitions (DIET) processes that affect the reflectivity of ruthenium-capped Mo/Si multilayer mirrors working under EUVL (extreme ultraviolet lithography) operating conditions [high vacuum, and 13.5 nm (92 eV) photons]. Critical issues are associated with possible oxidation of the 2 nm thick Ru capping layer due to the inevitable background pressure of H 2O, and carbon build up due to background hydrocarbons. In the present work, we discuss aspects of the radiation-induced surface chemistry of Ru irradiated by 100 eV electrons and 92 eV photons. The cross section for electron-stimulated desorption of oxygen from O-covered Ru is ˜6 × 10 -19 cm 2. Carbon accumulation several nm thick occurs on the Ru surface during electron irradiation in methyl methacrylate (MMA) vapor, a model background impurity hydrocarbon. Radiation damage by low-energy secondary electrons is believed to dominate over direct photoexcitation of adsorbates under EUVL conditions. The secondary electron yield from Ru varies strongly with photon energy, and is ˜0.02 electrons/photon at 92 eV.

  20. Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-04-01

    Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native extreme ultraviolet (EUV) mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability they cause. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a multilayer growth model based on a level-set technique was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. Further, the printability of the characterized native defects was studied at the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model, was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape.

  1. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  2. Considering mask pellicle effect for more accurate OPC model at 45nm technology node

    NASA Astrophysics Data System (ADS)

    Wang, Ching-Heng; Liu, Qingwei; Zhang, Liguo

    2008-11-01

    Now it comes to the 45nm technology node, which should be the first generation of the immersion micro-lithography. And the brand-new lithography tool makes many optical effects, which can be ignored at 90nm and 65nm nodes, now have significant impact on the pattern transmission process from design to silicon. Among all the effects, one that needs to be pay attention to is the mask pellicle effect's impact on the critical dimension variation. With the implement of hyper-NA lithography tools, light transmits the mask pellicle vertically is not a good approximation now, and the image blurring induced by the mask pellicle should be taken into account in the computational microlithography. In this works, we investigate how the mask pellicle impacts the accuracy of the OPC model. And we will show that considering the extremely tight critical dimension control spec for 45nm generation node, to take the mask pellicle effect into the OPC model now becomes necessary.

  3. Model-based mask data preparation (MB-MDP) and its impact on resist heating

    NASA Astrophysics Data System (ADS)

    Fujimura, Aki; Kamikubo, Takashi; Bork, Ingo

    2011-04-01

    Complex mask shapes will be required on critical layer masks for 20nm logic node, threatening to explode the mask write times. Model-Based Mask Data Preparation (MB-MDP) has been introduced to reduce the shot count required to write complex masks while simultaneously improving resolution and dose margin of sub-100nm features. For production use of MB-MDP, a number of questions have been raised and answered. This paper summarizes these potential issues and their resolutions. In particular, the paper takes an in-depth look at one of the questions: impact of overlapping shots on heating effect. The paper concludes that while heating effect is an important issue for all e-beam writing even with conventional non-overlapping shots, overall dose density per unit time over microns of space is the principal driver behind heating effects. Highly local shot density and shot sequencing does not affect heating significantly, particularly for smaller shots. MB-MDP does not introduce any additional concerns.

  4. Mathematical modeling of pattern formation caused by drying of colloidal film under a mask.

    PubMed

    Tarasevich, Yuri Yu; Vodolazskaya, Irina V; Sakharova, Lyudmila V

    2016-02-01

    In our model, we simulate an experiment (D.J. Harris, H. Hu, J.C. Conrad, J.A. Lewis, Patterning colloidal films via evaporative lithography, Phys. Rev. Lett. 98, 148301 (2007)). A thin colloidal sessile droplet is allowed to dry out on a horizontal hydrophilic surface. A mask just above the droplet predominantly allows evaporation from the droplet free surface directly beneath the holes in the mask. We consider one special case, when the holes in the mask are arranged so that the system has rotational symmetry of order m . We use a speculative evaporative flux to mimic the real system. Advection, diffusion, and sedimentation are taken into account. FlexPDE is utilized to solve an advection-diffusion equation using the finite element method. The simulation demonstrates that the colloidal particles accumulate below the holes as the solvent evaporates. Diffusion can reduce this accumulation. PMID:26920529

  5. Neonatal resuscitation 1: a model to measure inspired and expired tidal volumes and assess leakage at the face mask

    PubMed Central

    O'Donnell, C; Kamlin, C; Davis, P; Morley, C

    2005-01-01

    Background: Neonatal resuscitation is a common and important intervention, and adequate ventilation is the key to success. In the delivery room, positive pressure ventilation is given with manual ventilation devices using face masks. Mannequins are widely used to teach and practise this technique. During both simulated and real neonatal resuscitation, chest excursion is used to assess tidal volume delivery, and leakage from the mask is not measured. Objective: To describe a system that allows measurement of mask leakage and estimation of tidal volume delivery. Methods: Respiratory function monitors, a modified resuscitation mannequin, and a computer were used to measure leakage from the mask and to assess tidal volume delivery in a model of neonatal resuscitation. Results: The volume of gas passing through a flow sensor was measured at the face mask. This was a good estimate of the tidal volume entering and leaving the lung in this model. Gas leakage between the mask and mannequin was also measured. This occurred principally during inflation, although gas leakage during deflation was seen when the total leakage was large. A volume of gas that distended the mask but did not enter the lung was also measured. Conclusion: This system can be used to assess the effectiveness of positive pressure ventilation given using a face mask during simulated neonatal resuscitation. It could be useful for teaching neonatal resuscitation and assessing ventilation through a face mask. PMID:15871990

  6. Low CoO grazing incidence collectors for EUVL HVM

    NASA Astrophysics Data System (ADS)

    Bianucci, G.; Cassol, G. L.; Ceglio, N. M.; Valsecchi, G.; Zocchi, F.

    2012-03-01

    Media Lario Technologies (MLT) uses its proprietary replication by electroforming technology to manufacture grazing incidence collectors in support of the EUVL technology roadmap. With the experience of more than 20 alpha and preproduction collectors installed to date, and with the development results of the Advanced Cooling Architecture (ACA) for High Volume Manufacturing (HVM) collector generation, we present optical, lifetime, and thermo-optical performance of the grazing incidence collectors, meeting the requirements of HVM scanners for a throughput target of more than 100 wafers per hour. The ruthenium reflective layer of the grazing incidence collector is very forgiving to the hostile environment of the plasma sources, as proven by the installed base with 1-year lifetime expectancy. On the contrary, the multilayer-based collector is vulnerable to Sn deposition and ion bombardment, and the need to mitigate this issue has led to a steady increase of the complexity of the LPP source architecture. With the awareness that the source and collector module is the major risk against the timely adoption of EUVL in HVM, we propose a new paradigm that, by using the field-proven design simplicity and robustness of the grazing incidence collector in both LDP and LPP sources, effectively reduces the risk of both source architectures and improves their reliability.

  7. Design and fabrication considerations of EUVL collectors for HVM

    NASA Astrophysics Data System (ADS)

    Bianucci, G.; Cassol, G. L.; Kools, J.; Prea, M.; Salmaso, G.; Valsecchi, G.; Zocchi, F. E.; Bolshukhin, D.; Schürmann, M.; Schriever, G.; Mader, A.; Zink, P.

    2009-03-01

    The power roadmap for EUVL high volume manufacturing (HVM) exceeds the 200W EUV in-band power at intermediate focus, thus posing more demanding requirements on HVM sources, debris suppression systems and collectors. Starting from the lessons learned in the design and fabrication of the grazing incidence collectors for the Alpha EUVL scanners, Media Lario Technologies is developing HVM optical solutions that enable designed-in lifetime improvements, such as larger source-collector distances, optimized collection efficiency through larger collected solid angles, and customized EUV reflective layers. The optical design of an HVM collector is described together with the selection of the sacrificial ruthenium reflective layer. The water cooling layout of the collector is evolved from the integrated cooling technology developed at Alpha level into an innovative cooling layout that minimizes the thermal gradients across the mirrors and allows controlling the optical performance at the far-field plane. Finally, the evolution of the collector's manufacturing technologies for HVM is discussed. XTREME technologies and Philips Extreme UV support this work by integrating the collector in the complete source collector module (SoCoMo). At system level, each component of the SoCoMo is part of a development and improvement plan leading to a comprehensive system that will fulfill the 200+ W EUV in-band power at intermediate focus.

  8. Determining the Critcial Size of EUV Mask Substrate Defects

    SciTech Connect

    Mccall, Monnikue M; Han, Hakseung; Cho, Wonil; Goldberg, Kenneth; Gullikson, Eric; Jeon, Chan-Uk; Wurm, Stefan

    2008-02-28

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tool. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  9. Determining the critical size of EUV mask substrate defects

    SciTech Connect

    Goldberg, Kenneth A.; Gullikson, Eric M.; Han, Hakseung; Cho, Wonil; Jeon, Chan-Uk; Wurm, Stefan

    2008-05-26

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tools. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  10. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  11. Investigating printability of native defects on EUV mask blanks through simulations and experiments

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Herbol, Henry; Jang, Il-Yong; Kwon, Hyuk Joo; Harris-Jones, Jenah; Denbeaux, Gregory

    2014-04-01

    Availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the defect printability as well as the fundamental aspects of a defect that result in the defects being printed. In this work, the native mask blank defects were characterized using atomic force microscopy (AFM) and cross-section transmission electron microscopy (TEM), and the defect printability of the characterized native mask defects was evaluated using finite-difference time-domain (FDTD) simulations. The simulation results were compared with the through-focus aerial images obtained at the SEMATECH Actinic Inspection Tool (AIT) at Lawrence Berkeley National Lab (LBNL) for the characterized defects. There was a reasonable agreement between the through-focus FDTD simulation results and the AIT results. To model the Mo/Si multilayer growth over the native defects, which served as the input for the FDTD simulations, a level-set technique was used to predict the evolution of the multilayer disruption over the defect. Unlike other models that assume a constant flux of atoms (of materials to be deposited) coming from a single direction, this model took into account the direction and incident fluxes of the materials to be deposited, as well as the rotation of the mask substrate, to accurately simulate the actual deposition conditions. The modeled multilayer growth was compared with the cross-section TEM images, and a good agreement was observed between them.

  12. Liftoff lithography of metals for extreme ultraviolet lithography mask absorber layer patterning

    NASA Astrophysics Data System (ADS)

    Lyons, Adam; Teki, Ranganath; Hartley, John

    2012-03-01

    The authors present a process for patterning Extreme Ultraviolet Lithography (EUVL) mask absorber metal using electron beam evaporation and bi-layer liftoff lithography. The Line Edge Roughness (LER) and Critical Dimension Uniformity (CDU) of patterned chrome absorber are determined for various chrome thicknesses on silicon substrates, and the viability of the method for use with nickel absorber and on EUVL masks is demonstrated. Scanning Electron Microscope (SEM) data is used with SuMMIT software to determine the absorber LER and CDU. The Lawrence Berkeley National Labs Actinic Inspection Tool (AIT) is used to verify the printability of the pattern down to 24nm half pitch. The effect of processing on the integrity of the mask multilayer is measured using an actinic reflectometer at the College of Nanoscale Science and Engineering.

  13. Electron Beam Lithography Simulation for the Patterning of Extreme Ultraviolet Masks

    NASA Astrophysics Data System (ADS)

    Tsikrikas, N.; Patsis, G. P.; Raptis, I.; Gerardino, A.; Quesnel, E.

    2008-06-01

    Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo-Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100 nm reproduced experimental metrology trends on the fine features of the layout.

  14. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOEpatents

    Cardinale, Gregory F.

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  15. Simulated masking of right whale sounds by shipping noise: incorporating a model of the auditory periphery.

    PubMed

    Cunningham, Kane A; Mountain, David C

    2014-03-01

    Many species of large, mysticete whales are known to produce low-frequency communication sounds. These low-frequency sounds are susceptible to communication masking by shipping noise, which also tends to be low frequency in nature. The size of these species makes behavioral assessment of auditory capabilities in controlled, captive environments nearly impossible, and field-based playback experiments are expensive and necessarily limited in scope. Hence, it is desirable to produce a masking model for these species that can aid in determining the potential effects of shipping and other anthropogenic noises on these protected animals. The aim of this study was to build a model that combines a sophisticated representation of the auditory periphery with a spectrogram-based decision stage to predict masking levels. The output of this model can then be combined with a habitat-appropriate propagation model to calculate the potential effects of noise on communication range. For this study, the model was tested on three common North Atlantic right whale communication sounds, both to demonstrate the method and to probe how shipping noise affects the detection of sounds with varying spectral and temporal characteristics. PMID:24606298

  16. Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas

    2005-06-01

    This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic field (EMF) simu-lation of light diffraction from optical masks is compared to the traditional assumption of an infinitely thin mask, the so called Kirchhoff approach. Rigorous EMF simulation will be employed to analyze mask polarization phenomena which become important in the ultrahigh NA regime. Several important lithographic phenomena, which can be explained only with rigorous EMF simulation, are discussed. This includes the printability of small assist features, intensity imbalanc-ing for alternating PSM, and process window deformations. The paper concludes with a discussion on material issues and algorithmic extensions which will be necessary for an accurate modeling of future mask technology.

  17. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  18. Growth and Printability of Multilayer Phase Defects on EUV MaskBlanks

    SciTech Connect

    Liang, Ted; Ultanir, Erdem; Zhnag, Guojing; Park, Seh-Jin; Anderson, Erik; Gullikson, Eric; Naulleau, Patrick; Salmassi, Farhad; Mirkarimi, Paul; Spiller, Eberhard; Baker, Sherry

    2007-06-10

    The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ultraviolet lithography (EUVL) for semiconductor manufacturing. Both the specification and reduction of defects necessitate the understanding of their printability and how they are generated and grow during Mo-Si multilayer (ML) deposition. A ML phase defect can be depicted by its topographical profile on the surface as either a bump or pit, which is then characterized by height or depth and width. The complexity of such seemingly simple phase defects lies in the many ways they can be generated and the difficulties of measuring their physical shape/size and optical effects on printability. An effective way to study phase defects is to use a programmed defect mask (PDM) as 'model' test sample where the defects are produced with controlled growth on a ML blank and accurate placement in varying proximity to absorber patterns on the mask. This paper describes our recent study of ML phase defect printability with resist data from exposures of a ML PDM on the EUV micro-exposure tool (MET, 5X reduction with 0.3NA).

  19. Impact of mask line edge roughness and statistical noise on next generation mask making

    NASA Astrophysics Data System (ADS)

    Kim, Byung Gook; Choi, Jin; Lee, Sang Hee; Jeon, Chan Uk

    2012-06-01

    As extreme ultraviolet lithography (EUVL) moves toward high volume manufacturing and pushes to increasingly smaller critical dimensions, achieving the stringent requirements for line edge roughness (LER) is increasingly challenging. For the 22 nm half-pitch node and beyond, the International Roadmap for Semiconductors requires less than 1.6 nm of line width roughness (LWR) on the wafer. The major contributor of this tight LWR is wafer resist LER and mask LER. However, in current ITRS, there is no guideline for mask LER. While significant progress has been made to reduce the resist of the LER on the wafer, it is not yet clear how much the mask LER should be improved for a 22 nm half-pitch node application. Additionally, there are various approaches to obtaining a smaller LER on the mask. It could be improved either by reducing well-known statistical noise or manipulating some process condition or material. Both approaches are effective in improving the LER, however, they shows a different result in mask CD uniformity itself. In this paper, in addition to setting the criteria of the mask LER, we will discuss how tight the mask LER is required to be and what kind of approach is desirable with regards to the LER and CD uniformity. Finally, an analysis of the LER and CD variation provides some insights into the impact of the next generation mask infrastructure.

  20. Image-based EUVL aberration metrology

    NASA Astrophysics Data System (ADS)

    Fenger, Germain Louis

    A significant factor in the degradation of nanolithographic image fidelity is optical wavefront aberration. As resolution of nanolithography systems increases, effects of wavefront aberrations on aerial image become more influential. The tolerance of such aberrations is governed by the requirements of features that are being imaged, often requiring lenses that can be corrected with a high degree of accuracy and precision. Resolution of lithographic systems is driven by scaling wavelength down and numerical aperture (NA) up. However, aberrations are also affected from the changes in wavelength and NA. Reduction in wavelength or increase in NA result in greater impact of aberrations, where the latter shows a quadratic dependence. Current demands in semiconductor manufacturing are constantly pushing lithographic systems to operate at the diffraction limit; hence, prompting a need to reduce all degrading effects on image properties to achieve maximum performance. Therefore, the need for highly accurate in-situ aberration measurement and correction is paramount. In this work, an approach has been developed in which several targets including phase wheel, phase disk, phase edges, and binary structures are used to generate optical images to detect and monitor aberrations in extreme ultraviolet (EUV) lithographic systems. The benefit of using printed patterns as opposed to other techniques is that the lithography system is tested under standard operating conditions. Mathematical models in conjunction with iterative lithographic simulations are used to determine pupil phase wavefront errors and describe them as combinations of Zernike polynomials.

  1. Source-mask selection using computational lithography: further investigation incorporating rigorous resist models

    NASA Astrophysics Data System (ADS)

    Kapasi, Sanjay; Robertson, Stewart; Biafore, John; Smith, Mark D.

    2009-12-01

    Recent publications have emphasized the criticality of computational lithography in source-mask selection for 32 and 22 nm technology nodes. Lithographers often select the illuminator geometries based on analyzing aerial images for a limited set of structures using computational lithography tools. Last year, Biafore, et al1 demonstrated the divergence between aerial image models and resist models in computational lithography. In a follow-up study2, it was illustrated that optimal illuminator is different when selected based on resist model in contrast to aerial image model. In the study, optimal source shapes were evaluated for 1D logic patterns using aerial image model and two distinct commercial resist models. Physics based lumped parameter resist model (LPM) was used. Accurately calibrated full physical models are portable across imaging conditions compared to the lumped models. This study will be an extension of previous work. Full physical resist models (FPM) with calibrated resist parameters3,4,5,6 will be used in selecting optimum illumination geometries for 1D logic patterns. Several imaging parameters - like Numerical Aperture (NA), source geometries (Annular, Quadrupole, etc.), illumination configurations for different sizes and pitches will be explored in the study. Our goal is to compare and analyze the optimal source-shapes across various imaging conditions. In the end, the optimal source-mask solution for given set of designs based on all the models will be recommended.

  2. Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

    SciTech Connect

    Park, Y. R.; Ahn, J. H.; Kim, J. S.; Kwon, B. S.; Lee, N.-E.; Kang, H. Y.; Hwangbo, C. K.; Ahn, Jinho; Seo, Hwan Seok

    2010-07-15

    Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl{sub 2}/Ar gas flow ratio, dc self-bias voltage (V{sub dc}), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl{sub 2}/Ar plasma even with a very high overetch time.

  3. Phase defect mitigation strategy: fiducial mark requirements on extreme ultraviolet lithography mask

    NASA Astrophysics Data System (ADS)

    Murachi, Tetsunori; Amano, Tsuyoshi; Oh, Sung Hyun

    2012-03-01

    For Extreme Ultra-Violet Lithography (EUVL), fabrication of defect free multi-layered (ML) mask blanks is one of the difficult challenges. ML defects come from substrate defects and adders during ML coating, cannot be removed, and are called as phase defect. If we can accept ML blanks with certain number of phase defects, the blank yield will be drastically up. In order to use such blanks, the phase defects need to be identified and located during ML blank defect inspection before absorber patterning. To locate phase defects on the blanks accurately and precisely, Fiducial Marks (FM) on ML blanks are needed for mask alignment and defect location information. The proposed requirement of defect location accuracy is <=20 nm [1]. In this paper, we will present the result of feasibility study on the requirements of FM on EUVL mask by simulations & experiments to establish the phase defect mitigation method with EUV Actinic Blank Inspection (ABI) tool. And the optimum ranges of FM line width, depth, and fabrication method on EUVL mask based on above results are >= 5 um line width, >= 100 nm depth FM etched into ML respectively, and additional finer FMs for magnified optics.

  4. Formal specification and verification of a fault-masking and transient-recovery model for digital flight-control systems

    NASA Technical Reports Server (NTRS)

    Rushby, John

    1991-01-01

    The formal specification and mechanically checked verification for a model of fault-masking and transient-recovery among the replicated computers of digital flight-control systems are presented. The verification establishes, subject to certain carefully stated assumptions, that faults among the component computers are masked so that commands sent to the actuators are the same as those that would be sent by a single computer that suffers no failures.

  5. Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

    DOEpatents

    Hau-Riege, Stefan Peter

    2007-05-01

    The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo--Si multilayer mirrors. Repairing Mo--Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo--Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

  6. AutoMOPS- B2B and B2C in mask making: Mask manufacturing performance and customer satisfaction improvement through better information flow management using generic models and standardized languages

    NASA Astrophysics Data System (ADS)

    Filies, Olaf; de Ridder, Luc; Rodriguez, Ben; Kujiken, Aart

    2002-03-01

    Semiconductor manufacturing has become a global business, in which companies of different size unite in virtual enterprises to meet new opportunities. Therefore Mask manufacturing is a key business, but mask ordering is a complex process and is always critical regarding design to market time, even though mask complexity and customer base are increasing using a wide variety of different mask order forms which are frequently faulty and very seldom complete. This is effectively blocking agile manufacturing and can tie wafer fabs to a single mask The goal of the project is elimination of the order verification through paperless, electronically linked information sharing/exchange between chip design, mask production and production stages, which will allow automation of the mask preparation. To cover these new techniques and their specifications as well as the common ones with automated tools a special generic Meta-model will be generated, based on the current standards for mask specifications, including the requirements from the involved partners (Alcatel Microelectronics, Altis, Compugraphics, Infineon, Nimble, Sigma-C), the project works out a pre-normative standard. The paper presents the current status of work. This work is partly funded by the Commission of the European Union under the Fifth Framework project IST-1999-10332 AutoMOPS.

  7. Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Terao, Kenji

    2015-07-01

    High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.

  8. Actinic review of EUV masks: status and recent results of the AIMSTM EUV system

    NASA Astrophysics Data System (ADS)

    Perlitz, Sascha; Peters, Jan Hendrik; Weiss, Markus; Hellweg, Dirk; Capelli, Renzo; Magnusson, Krister; Malloy, Matt; Wurm, Stefan

    2015-10-01

    Key enabler of the successful introduction of EUV lithography into volume production is the EUV mask infrastructure. For the production of defect free masks, actinic review of potential defect sites to decide on the need for repair or compensation is required. Also, the repair or compensation with the ZEISS MERiT electron beam repair tool needs actinic verification in a closed loop mask repair solution. For the realization of actinic mask review, ZEISS and the SEMATECH EUVL Mask Infrastructure consortium started a development program for an EUV aerial image metrology system, the AIMSTM EUV, with realization of a prototype tool. The development and prototype realization of the AIMSTM EUV has entered the tool calibration and qualification phase utilizing the achieved capabilities of EUV aerial image acquisition and EUV mask handling. In this paper, we discuss the current status of the prototype qualification and show recent measurement results.

  9. Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook

    NASA Astrophysics Data System (ADS)

    Goodwin, Frank; Kearney, Patrick; Kadaksham, Arun J.; Wurm, Stefan

    2013-10-01

    The ability of optical lithography to steadily produce images at increasingly smaller dimension while maintaining pattern fidelity of devices with greater complexity has enabled the success of Moore's Law. Although 193 nm immersion and double patterning techniques have proven successful in extending optical lithography, the strategies proposed for further extension are too costly to support device manufacturing. As a result, greater focus has been shifted to resolving the challenges hindering extreme ultraviolet lithography (EUVL) adoption as the mainstream lithography solution. While similar to conventional optical lithography, there are unique challenges to EUVL, one of which is the change from transmission masks to the reflective masks required for EUVL. The use of reflective reticles greatly increases complexity of EUV reticle structure when compared to the binary masks used with optical lithography. Maximizing the reflectance an EUV mask requires the use of a multilayer Bragg reflector deposited on a finely polished substrate with a thin absorber film on top used to define the device pattern. Although similar in form to the substrates used in optical lithography, the tolerances on figure, surface finish, and defects are significantly more stringent for EUV substrates. Control of aberrations and maintaining pattern fidelity places tight constraints on the flatness and roughness of the EUV substrate; imperfections and particles can result in printable defects. The Bragg reflector of the EUV mask consists of 40 to 50 Si/Mo bi-layers deposited using an ion beam deposition tool. This film stack must be deposited to meet the reflectivity and uniformity requirements of the exposure tool and must be completely free of defects. The absorber film is typically a tantalum-based nitride layer selected for its ability to absorb EUV radiation and maintain thermal stability. The thickness and morphology of this film must be tightly controlled to enable use as the patterning

  10. Electron beam inspection of 16nm HP node EUV masks

    NASA Astrophysics Data System (ADS)

    Shimomura, Takeya; Narukawa, Shogo; Abe, Tsukasa; Takikawa, Tadahiko; Hayashi, Naoya; Wang, Fei; Ma, Long; Lin, Chia-Wen; Zhao, Yan; Kuan, Chiyan; Jau, Jack

    2012-11-01

    EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing

  11. Production of EUV mask blanks with low killer defects

    NASA Astrophysics Data System (ADS)

    Antohe, Alin O.; Kearney, Patrick; Godwin, Milton; He, Long; John Kadaksham, Arun; Goodwin, Frank; Weaver, Al; Hayes, Alan; Trigg, Steve

    2014-04-01

    For full commercialization, extreme ultraviolet lithography (EUVL) technology requires the availability of EUV mask blanks that are free of defects. This remains one of the main impediments to the implementation of EUV at the 22 nm node and beyond. Consensus is building that a few small defects can be mitigated during mask patterning, but defects over 100 nm (SiO2 equivalent) in size are considered potential "killer" defects or defects large enough that the mask blank would not be usable. The current defect performance of the ion beam sputter deposition (IBD) tool will be discussed and the progress achieved to date in the reduction of large size defects will be summarized, including a description of the main sources of defects and their composition.

  12. EUV mask reflectivity measurements with micro-scale spatial resolution

    SciTech Connect

    Goldberg, Kenneth A.; Rekawa, Senajith B.; Kemp, Charles D.; Barty, Anton; Anderson, Erik; Kearney, Patrick; Han, Hakseung

    2008-02-01

    The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. They describe the unique measurement capabilities of a prototype actinic (EUV) wavelength microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. The defects present in EUV masks can appear in many well-known forms: as particles that cause amplitude or phase variations in the reflected field; as surface contamination that reduces reflectivity and contrast; and as damage from inspection and use that reduces the reflectivity of the multilayer coating. This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. They describe the role of actinic scanning inspection in defect repair studies, observations of laser damage, actinic inspection following scanning electron microscopy, and the detection of both native and programmed defects.

  13. Properites of ultrathin films appropriate for optics capping layers in extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Bajt, S; Edwards, N V; Madey, T E

    2007-06-25

    The contamination of optical surfaces by irradiation shortens optics lifetime and is one of the main concerns for optics used in conjunction with intense light sources, such as high power lasers, 3rd and 4th generation synchrotron sources or plasma sources used in extreme ultraviolet lithography (EUVL) tools. This paper focuses on properties and surface chemistry of different materials, which as thin layers, could be used as capping layers to protect and extend EUVL optics lifetime. The most promising candidates include single element materials such as ruthenium and rhodium, and oxides such as TiO{sub 2} and ZrO{sub 2}.

  14. Computer models for masked hearing experiments with beluga whales (Delphinapterus leucas).

    PubMed

    Erbe, C; King, A R; Yedlin, M; Farmer, D M

    1999-05-01

    Environmental assessments of manmade noise and its effects on marine mammals need to address the question of how noise interferes with animal vocalizations. Seeking the answer with animal experiments is very time consuming, costly, and often infeasible. This article examines the possibility of estimating results with software models. A matched filter, spectrogram cross-correlation, critical band cross-correlation, and a back-propagation neural network detected a beluga vocalization in three types of ocean noise. Performance was compared to masked hearing experiments with a beluga whale [C. Erbe and D. M. Farmer, Deep-Sea Res. II 45, 1373-1388 (1998)]. The artificial neural network simulated the animal data most closely and raised confidence in its ability to predict the interference of a variety of noise source with a variety of vocalizations. PMID:10335646

  15. A cocktail party model of spatial release from masking by both noise and speech interferers a)

    PubMed Central

    Jones, Gary L.; Litovsky, Ruth Y.

    2011-01-01

    A mathematical formula for estimating spatial release from masking (SRM) in a cocktail party environment would be useful as a simpler alternative to computationally intensive algorithms and may enhance understanding of underlying mechanisms. The experiment presented herein was designed to provide a strong test of a model that divides SRM into contributions of asymmetry and angular separation [Bronkhorst (2000). Acustica 86, 117–128] and to examine whether that model can be extended to include speech maskers. Across masker types the contribution to SRM of angular separation of maskers from the target was found to grow at a diminishing rate as angular separation increased within the frontal hemifield, contrary to predictions of the model. Speech maskers differed from noise maskers in the overall magnitude of SRM and in the contribution of angular separation (both greater for speech). These results were used to develop a modified model that achieved good fits to data for noise maskers (ρ = 0.93) and for speech maskers (ρ = 0.94) while using the same functions to describe separation and asymmetry components of SRM for both masker types. These findings suggest that this approach can be used to accurately model SRM for speech maskers in addition to primarily “energetic” noise maskers. PMID:21895087

  16. ON and OFF inhibition as mechanisms for forward masking in the inferior colliculus: a modeling study.

    PubMed

    Gai, Yan

    2016-06-01

    Masking effects of a preceding stimulus on the detection or perception of a signal have been found in several sensory systems in mammals, including humans and rodents. In the auditory system, it has been hypothesized that a central "OFF-inhibitory" mechanism, which is generated by neurons that respond after a sound is terminated, may contribute to the observed psychophysics. The present study constructed a systems model for the inferior colliculus that includes major ascending monaural and binaural auditory pathways. The fundamental characteristics of several neuron types along the pathways were captured by Hodgkin-Huxley models with specific membrane and synaptic properties. OFF responses were reproduced with a model of the superior paraolivary nucleus containing a hyperpolarization-activated h current and a T-type calcium current. When the gap between the end of the masker and the onset of the signal was large, e.g., >5 ms, OFF inhibition generated strong suppressive effects on the signal response. For smaller gaps, an additional inhibitory source, which was modeled as ON inhibition from the contralateral dorsal nucleus of the lateral lemniscus, showed the potential of explaining the psychophysics. Meanwhile, the effect of a forward masker on the binaural sensitivity to a low-frequency signal was examined, which was consistent with previous psychophysical findings related to sound localization. PMID:26912597

  17. Investigating temporal asymmetry using masking period patterns and models of peripheral auditory processing.

    PubMed

    Lentz, Jennifer J; Shen, Yi

    2011-05-01

    Two experiments were conducted in conjunction with modeling to evaluate the role of peripheral nonlinearity and neural adaptation in the perception of temporally asymmetric sounds. In both experiments, maskers were broadband noises amplitude modulated with ramped and damped exponential modulators that repeated at 40 Hz. Masking period patterns (MPPs) were constructed by measuring detection threshold of a 5-ms, 1000-Hz tone burst as function of the signal's onset delay. Experiment I showed that varying modulator half-life from 1 to 16 ms led to differences in the damped and the ramped MPPs that were largest at the short half-lives and diminished at the longer half-lives. When masker level was varied (experiment II), the largest difference between ramped and damped MPPs occurred at moderate stimulus levels. Two peripheral auditory models were evaluated, one a simple auditory filter followed by a power-law nonlinearity and another, a model of auditory nerve processing [J. Acoust. Soc. Am. 126, 2390-2412 (2009)] that includes neural adaptation. Neither models predicted differences between the ramped and damped MPPs, providing indirect support that the central auditory system has a role in perceptual temporal asymmetry. PMID:21568421

  18. Experimental study of particle-free mask handling

    NASA Astrophysics Data System (ADS)

    Amemiya, Mitsuaki; Ota, Kazuya; Taguchi, Takao; Suga, Osamu

    2009-03-01

    One of the critical issues for EUVL masks is clean and particle-free mask handling. We reported that the number of particle adders on the front side of a mask in the dual pod during the process from the load port to putting on the Electrostatic chuck (ESC) in vacuum could be reduce to less than 0.01 particle/cycle (>=46 nm). In addition, we found that chucking the mask on the ESC caused two serious issues. The first is that many particles stick to on the backside of the mask after chucking on the ESC, raising the question of whether the particle adders on the backside will travel to the front side. We examined the travel of these particles using the substrates after chucking and polystyrene latex (PSL) substrates that were dispersed on the backside. These experiments show that there is very little probability that particles on the backside will travel to the front side. The second issue is whether the mask blanks will charge up by chucking on the ESC and some particles will add on the front side. We measured the electric potential of the back and front sides of the mask and examined the particle adders. Our experiments revealed that to protect the mask from the particles, the mask must be grounded from the beginning to the end. For these two issues, we confirmed that a dual pod system works effectively to protect the mask from particles. This work is supported by NEDO as a part of the EUV mask program.

  19. Masked translation priming asymmetry in Chinese-English bilinguals: making sense of the Sense Model.

    PubMed

    Xia, Violet; Andrews, Sally

    2015-01-01

    Masked translation priming asymmetry is the robust finding that priming from a bilingual's first language (L1) to their second language (L2) is stronger than priming from L2 to L1. This asymmetry has been claimed to be task dependent. The Sense Model proposed by Finkbeiner, Forster, Nicol, and Nakamura (2004) claims that the asymmetry is reduced in semantic categorization relative to lexical decision due to a category filtering mechanism that limits the features considered in categorization decisions to dominant, category-relevant features. This paper reports two pairs of semantic categorization and lexical decision tasks designed to test the Sense Model's predictions. The experiments replicated the finding of Finkbeiner et al. that L2-L1 priming is somewhat stronger in semantic categorization than lexical decision, selectively for exemplars of the category. However, the direct comparison of L2-L1 and L1-L2 translation priming across tasks failed to confirm the Sense Model's central prediction that translation priming asymmetry is significantly reduced in semantic categorization. The data therefore fail to support the category filtering account of translation priming asymmetry. Rather, they suggest that pre-activation of conceptual features of the target category provides feedback to lexical forms that compensates for the weak connections between the lexical and conceptual representations of L2 words. PMID:25014131

  20. Masked target transform volume clutter metric for human observer visual search modeling

    NASA Astrophysics Data System (ADS)

    Moore, Richard Kirk

    The Night Vision and Electronic Sensors Directorate (NVESD) develops an imaging system performance model to aid in the design and comparison of imaging systems for military use. It is intended to approximate visual task performance for a typical human observer with an imaging system of specified optical, electrical, physical, and environmental parameters. When modeling search performance, the model currently uses only target size and target-to-background contrast to describe a scene. The presence or absence of other non-target objects and textures in the scene also affect search performance, but NVESD's targeting task performance metric based time limited search model (TTP/TLS) does not currently account for them explicitly. Non-target objects in a scene that impact search performance are referred to as clutter. A universally accepted mathematical definition of clutter does not yet exist. Researchers have proposed a number of clutter metrics based on very different methods, but none account for display geometry or the varying spatial frequency sensitivity of the human visual system. After a review of the NVESD search model, properties of the human visual system, and a literature review of clutter metrics, the new masked target transform volume clutter metric will be presented. Next the results of an experiment designed to show performance variation due to clutter alone will be presented. Then, the results of three separate perception experiments using real or realistic search imagery will be used to show that the new clutter metric better models human observer search performance than the current NVESD model or any of the reviewed clutter metrics.

  1. Neural masking by sub-threshold electric stimuli: animal and computer model results.

    PubMed

    Miller, Charles A; Woo, Jihwan; Abbas, Paul J; Hu, Ning; Robinson, Barbara K

    2011-04-01

    Electric stimuli can prosthetically excite auditory nerve fibers to partially restore sensory function to individuals impaired by profound or severe hearing loss. While basic response properties of electrically stimulated auditory nerve fibers (ANF) are known, responses to complex, time-changing stimuli used clinically are inadequately understood. We report that forward-masker pulse trains can enhance and reduce ANF responsiveness to subsequent stimuli and the novel observation that sub-threshold (nonspike-evoking) electric trains can reduce responsiveness to subsequent pulse-train stimuli. The effect is observed in the responses of cat ANFs and shown by a computational biophysical ANF model that simulates rate adaptation through integration of external potassium cation (K) channels. Both low-threshold (i.e., Klt) and high-threshold (Kht) channels were simulated at each node of Ranvier. Model versions without Klt channels did not produce the sub-threshold effect. These results suggest that some such accumulation mechanism, along with Klt channels, may underlie sub-threshold masking observed in cat ANF responses. As multichannel auditory prostheses typically present sub-threshold stimuli to various ANF subsets, there is clear relevance of these findings to clinical situations. PMID:21080206

  2. Extending models of visual-word recognition to semicursive scripts: Evidence from masked priming in Uyghur.

    PubMed

    Yakup, Mahire; Abliz, Wayit; Sereno, Joan; Perea, Manuel

    2015-12-01

    One basic feature of the Arabic script is its semicursive style: some letters are connected to the next, but others are not, as in the Uyghur word [see text]/ya xʃi/ ("good"). None of the current orthographic coding schemes in models of visual-word recognition, which were created for the Roman script, assign a differential role to the coding of within letter "chunks" and between letter "chunks" in words in the Arabic script. To examine how letter identity/position is coded at the earliest stages of word processing in the Arabic script, we conducted 2 masked priming lexical decision experiments in Uyghur, an agglutinative Turkic language. The target word was preceded by an identical prime, by a transposed-letter nonword prime (that either kept the ligation pattern or did not), or by a 2-letter replacement nonword prime. Transposed-letter primes were as effective as identity primes when the letter transposition in the prime kept the same ligation pattern as the target word (e.g., [see text]/inta_jin/-/itna_jin/), but not when the transposed-letter prime didn't keep the ligation pattern (e.g., [see text]/so_w_ʁa_t/-/so_ʁw_a_t/). Furthermore, replacement-letter primes were more effective when they kept the ligation pattern of the target word than when they did not (e.g., [see text]/so_d_ʧa_t/-/so_w_ʁa_t/ faster than [see text]/so_ʧd_a_t/-/so_w_ʁa_t/). We examined how input coding schemes could be extended to deal with the intricacies of semicursive scripts. PMID:26618626

  3. Printability and inspectability of defects on the EUV mask for sub-32nm half pitch HVM application

    NASA Astrophysics Data System (ADS)

    Huh, Sungmin; Kang, In-Yong; Kim, Sang-Hyun; Seo, Hwan-seok; Kim, Dongwan; Park, Jooon; Kim, Seong-Sue; Cho, Han-Ku; Goldberg, Kenneth; Mochi, Iacopo; Shoki, Tsutomu; Inderhees, Gregg

    2011-04-01

    The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.

  4. Current status of NGL masks

    NASA Astrophysics Data System (ADS)

    Walker, David M.

    2000-07-01

    The manufacture of Next Generation Lithography reticles presents many challenges. Extremely small critical dimension and image placement error budgets; novel substrates including membranes and multi-layer reflective coatings; and inspection, detection and repair of subresolution defects will force revolutionary change in the infrastructure of mask technology. This paper surveys current NGL mask designs, structures, materials and manufacturing capabilities. Results from mask fabrication, physical modeling, error budget analysis and extensive experience in building X-Ray membrane masks are presented to develop process learning plans to meet future product specifications.

  5. Clay Mask Workshop

    ERIC Educational Resources Information Center

    Gamble, David L.

    2012-01-01

    Masks can represent so many things, such as emotions (happy, sad, fearful) and power. The familiar "comedy and tragedy" masks, derived from ancient Greek theater, are just one example from mask history. Death masks from the ancient Egyptians influenced the ancient Romans into creating similar masks for their departed. Masks can represent many…

  6. SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

    NASA Astrophysics Data System (ADS)

    Antohe, Alin O.; Balachandran, Dave; He, Long; Kearney, Patrick; Karumuri, Anil; Goodwin, Frank; Cummings, Kevin

    2015-03-01

    Availability of defect-free reflective mask has been one of the most critical challenges to extreme ultraviolet lithography (EUVL). To mitigate the risk, significant progress has been made on defect detection, pattern shifting, and defect repair. Clearly such mitigation strategies are based on the assumption that defect counts and sizes from incoming mask blanks must be below practical levels depending on mask specifics. The leading industry consensus for early mask product development is that there should be no defects greater than 80 nm in the quality area, 132 mm x 132 mm. In addition less than 10 defects smaller than 80 nm may be mitigable. SEMATECH has been focused on EUV mask blank defect reduction using Veeco Nexus TM IBD platform, the industry standard for mask blank production, and assessing if IBD technology can be evolved to a manufacturing solution. SEMATECH has recently announced a breakthrough reduction of defects in the mask blank deposition process resulting in the production of two defect-free EUV mask blanks at 54 nm inspection sensitivity (SiO2 equivalent). This paper will discuss the dramatic reduction of baseline EUV mask blank defects, review the current deposition process run and compare results with previous process runs. Likely causes of remaining defects will be discussed based on analyses as characterized by their compositions and whether defects are embedded in the multilayer stack or non-embedded.

  7. Smoke Mask

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Smoke inhalation injury from the noxious products of fire combustion accounts for as much as 80 percent of fire-related deaths in the United States. Many of these deaths are preventable. Smoke Mask, Inc. (SMI), of Myrtle Beach, South Carolina, is working to decrease these casualties with its line of life safety devices. The SMI personal escape hood and the Guardian Filtration System provide respiratory protection that enables people to escape from hazardous and unsafe conditions. The breathing filter technology utilized in the products is specifically designed to supply breathable air for 20 minutes. In emergencies, 20 minutes can mean the difference between life and death.

  8. EUV mask process development status for full field EUV exposure tool

    NASA Astrophysics Data System (ADS)

    Abe, Tsukasa; Adachi, Takashi; Akizuki, Hideo; Mohri, Hiroshi; Hayashi, Naoya; Ishikiriyama, Kosuke

    2008-05-01

    Extreme Ultra Violet Lithography (EUVL) is one of promising candidates for next generation lithography, 32nm node and beyond. Authors are developing EUV mask process targeting full field EUV exposure tool. Unlike the conventional optical mask, EUV mask is reflective type mask. To reflect 13.5nm wavelength light, 40 pairs of Mo/Si multilayer (ML) is used for reflective layer. Reflective layer is covered by capping layer. The capping layer protect reflective layer from absorber etching, defect repair and environmental condition. Top of absorber layer is covered by low reflective (LR) layer to achieve high contrast between the etched and not etched portion. Back side of EUV mask is covered by conductive film for electrostatic chuck use. In this paper, we will report current process development status of EUV mask for full field EUV exposure tool. Absorber patterning process including resist patterning and absorber etching were developed. Thin resist use and small resist damage dry etching process achieved pattern resolution of 32nm node. Defect inspection was also evaluated using DUV reticle inspection tool. Ta-based absorber on ruthenium (Ru) capped ML blanks was used for this evaluation. Because, Ru material has high resistivity to absorber etching plasma, it enable buffer layer less EUV mask structure. Ru also has better property on oxidation resistance compared to standard silicon (Si) capping layer.

  9. Dynamic mask for producing uniform or graded-thickness thin films

    DOEpatents

    Folta, James A.

    2006-06-13

    A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

  10. Development of a Model to Assess Masking Potential for Marine Mammals by the Use of Air Guns in Antarctic Waters.

    PubMed

    Wittekind, Dietrich; Tougaard, Jakob; Stilz, Peter; Dähne, Michael; Clark, Christopher W; Lucke, Klaus; von Benda-Beckmann, Sander; Ainslie, Michael A; Siebert, Ursula

    2016-01-01

    We estimated the long-range effects of air gun array noise on marine mammal communication ranges in the Southern Ocean. Air gun impulses are subject to significant distortion during propagation, potentially resulting in a quasi-continuous sound. Propagation modeling to estimate the received waveform was conducted. A leaky integrator was used as a hearing model to assess communication masking in three species due to intermittent/continuous air gun sounds. Air gun noise is most probably changing from impulse to continuous noise between 1,000 and 2,000 km from the source, leading to a reduced communication range for, e.g., blue and fin whales up to 2,000 km from the source. PMID:26611093

  11. Novel non-chemically amplified (n-CARs) negative resists for EUVL

    NASA Astrophysics Data System (ADS)

    Singh, Vikram; Satyanarayana, V. S. V.; Sharma, Satinder K.; Ghosh, Subrata; Gonsalves, Kenneth E.

    2014-03-01

    We report the lithography performance of novel non chemical amplified (n-CARS) negative photoresist materials which are accomplished by homopolymers and copolymers that are prepared from monomers containing sulfonium groups. The latter have long been found to be sensitive to UV radiation and undergo polarity change on exposure. For this reason, these groups were chosen as radiation sensitive groups in non- CARs that are discussed herein. Novel n-CAR negative resists were synthesized and characterized for EUVL applications, as they are directly sensitive to radiation without utilizing the concept of chemical amplification. The n-CARs achieved 20 and 16 nm L/2S, L/S patterns to meet the ITRS requirements. We will also discuss the sensitivity and LER of these negative n-CARS to e-beam irradiation which will provide a basis for EUVL down to the 16 nm node and below. These new negative tone resist provide a viable path forward for designing non- chemically amplified resists that can obtain higher resolutions than current chemically amplified resists at competitive sensitivities.

  12. Masks and Other Disguises.

    ERIC Educational Resources Information Center

    Ploghoft, Debra

    Instructions for making simple masks are provided in this guide for teachers of elementary children. Directions with illustrations are given for constructing masks from paper plates, construction paper, plastic milk jugs, and papier-mache. Ideas include a clown mask, a flower mask, a top hat, a paper crown, and "Groucho" glasses. Types of masks…

  13. A consistent NPMLE of the joint distribution function with competing risks data under the dependent masking and right-censoring model.

    PubMed

    Li, Jiahui; Yu, Qiqing

    2016-01-01

    Dinse (Biometrics, 38:417-431, 1982) provides a special type of right-censored and masked competing risks data and proposes a non-parametric maximum likelihood estimator (NPMLE) and a pseudo MLE of the joint distribution function [Formula: see text] with such data. However, their asymptotic properties have not been studied so far. Under the extention of either the conditional masking probability (CMP) model or the random partition masking (RPM) model (Yu and Li, J Nonparametr Stat 24:753-764, 2012), we show that (1) Dinse's estimators are consistent if [Formula: see text] takes on finitely many values and each point in the support set of [Formula: see text] can be observed; (2) if the failure time is continuous, the NPMLE is not uniquely determined, and the standard approach (which puts weights only on one element in each observed set) leads to an inconsistent NPMLE; (3) in general, Dinse's estimators are not consistent even under the discrete assumption; (4) we construct a consistent NPMLE. The consistency is given under a new model called dependent masking and right-censoring model. The CMP model and the RPM model are indeed special cases of the new model. We compare our estimator to Dinse's estimators through simulation and real data. Simulation study indicates that the consistent NPMLE is a good approximation to the underlying distribution for moderate sample sizes. PMID:25160694

  14. Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation

    NASA Astrophysics Data System (ADS)

    Houser, David C.; Dong, Feng; Perera, Chami N.; Perera, Rupert C. C.

    2015-09-01

    Extreme Ultraviolet (EUV) Lithography is still viewed as the most promising approach for maintaining the pace of Moore's Law. Recent real achievements in EUV Lithography (EUVL) have encouraged semiconductor manufacturers to reconsider their road maps. One of the principal challenges in the ongoing EUVL implementation for high volume manufacturing (HVM) is the availability of necessary clean at wavelength metrology tools. EUV Tech is the world's leading manufacturer of at-wavelength EUV metrology equipment. Founded in 1997, EUV Tech has pioneered the development of several stand-alone inspection, metrology, and calibration tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. In this paper, EUV Tech's R&D program to minimize particle adders in our EUV Reflectometer along with the ongoing effort to enhance the reflectivity and wavelength, precision and accuracy required to qualify the EUV masks for HVM. In addition to preliminary results from our stand alone EUV Scatterometer developed to characterize the phase roughness of a EUV mask and the introduction of EUV Tech's Pellicle test suite for testing EUV pellicles.

  15. History and future of mask making

    NASA Astrophysics Data System (ADS)

    Levy, Ken L.

    1996-12-01

    The history of the mask industry has three main periods, which I call the Classical Period, the Dark Ages, and the Renaissance, by analogy with those periods in the history of Western Europe. During the Classical Period, people developed 1X masks and the technology to make them. In the Dark Ages, people exploited the equipment developed during the Classical Period to make 5X reduction reticle, ending the nobility of mask making. In today's Renaissance of mask making, a proliferation of mask types is requiring a rebirth of innovation and creativity. The Renaissance resembles the Classical Period: masks are once again strategic, and technological capability is once again the driver. Meanwhile, the mask industry is carrying forward the productivity and efficiency gains it achieved during the Dark Ages. We must create a new business and economic model to support these changes in the characteristics of the marketplace.

  16. Improving Approaches for Determining Ice Volume Change on the Greenland Ice Sheet Margin using ASTER and SPOT Digital Elevation Models and Spectral Masking

    NASA Astrophysics Data System (ADS)

    Johnson, K. N.; Rhodes, T.; Tulaczyk, S. M.; Finfrock, A.; Lajoie, L.

    2009-12-01

    The Greenland Ice Sheet (GIS) is the largest ice sheet in the Northern Hemisphere and understanding trends in its mass balance has important implications for predicting global sea level rise. High relief topography along the margin of the GIS makes it difficult to use low-resolution remote sensing to resolve ice elevations. These marginal regions however, tend to be more dynamic than the interior of the ice sheet and may show signs of ice volume loss earlier than the interior. In this study we difference georeferenced ASTER digital elevation models (DEMs) from 2000-01 (30 meter resolution) with SPOT DEMs from 2008-09 (40 meter resolution) made available through the SPIRIT IPY program. ASTER DEMs from 2006-07 are used where SPOT data is not available. The change in these DEMs is divided by the time elapsed between scenes giving change in km3 per year. The method used for DEM production is not accurate over low contrast surfaces such as water, and snow. High relief bedrock can also have more error than areas of glacial ice due to slope. Masking snow, water, and rock from scenes minimizes total error. Most methods of spectral masking available in the literature rely on establishing thresholds for a scene which separate snow from ice from water. In order to apply these methods to multiple scenes taken at different latitudes, seasons, and sun altitudes, a new set of thresholds need to be developed for each scene which proves to be a very time intensive process. When covering large areas with a mosaic of scenes, these methods have not proven applicable. We have developed a method of nesting masks which allows for faster and less subjective trial-and-error threshold setting. This method can be applied to a range of scenes with little to no individual manipulation giving a repeatable result. The first mask eliminates most bedrock with a negative NDSI and fjord water and sea ice with an elevation of about 0. A principal components analysis (PCA) is done under this mask for

  17. Wavelength dependent mask defects

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Butt, Shahid; Burnham, Jay; Faure, Tom; Hibbs, Michael; Rankin, Jed; Thibault, David; Watts, Andrew

    2005-05-01

    For years there has been a mismatch between the photomask inspection wavelength and the usage conditions. While the non-actinic inspection has been a source for concern, there has been essentially no evidence that a defect "escaped" the mask production process due to the inspection mismatch. This paper will describe the discovery of one such defect, as well as the diagnostic and inspection techniques used to identify the location, analyze the composition, and determine the source of the printed wafer defect. Conventional mask inspection techniques revealed no defects, however an actinic Aerial Image Metrology System (AIMS) revealed a 1.5 mm region on the mask with up to 59% transmission reduction at 193 nm. Further diagnostics demonstrated a strong wavelength dependence which accounted for the near invisibility of the defect at I line (365 nm) or even DUV (248 nm) wavelengths, which had 0% and 5% respective transmission reductions. Using some creative imaging techniques via AIMS tool and modeling, the defect was deduced to have a three dimensional Gaussian absorption character, with total width approximately 1.5 mm. Several non-destructive diagnostic techniques were developed to determine the composition and location of the defect within the substrate. These results will be described in addition to identifying methods for ensuring product quality in the absence of actinic inspection.

  18. Development of core technologies on EUV mask and resist for sub-20-nm half pitch generation

    NASA Astrophysics Data System (ADS)

    Inoue, Soichi; Amano, Tsuyoshi; Itani, Toshiro; Watanabe, Hidehiro; Mori, Ichiro; Watanabe, Takeo; Kinoshita, Hiroo; Miyai, Hiroki; Hatakeyama, Masahiro

    2012-09-01

    This paper reports on the current status for the key infrastructures of the extreme ultraviolet lithography (EUVL) for sub-20-nm half pitch (hp) generation. More specifically, the inspection technologies for EUV mask and resist-related technologies will be dedicatedly discussed. First, the actinic blank inspector is strongly required especially for sub-20-nm hp generation. The basic configuration of the prototyping tool will be presented. Second, the basic configuration of the newly developing patterned mask inspector (PMI) consisting of the projection-type optics for the electron beam (EB) will be presented. The primary challenge for the EUV resist is the concurrent improvements of resolution, line width roughness, sensitivity, and outgas. The basic performance of the EUV resist and preliminary validation of the outgas qualification for sub-20-nm hp will be presented.

  19. Damage/organic free ozonated DI water cleaning on EUVL Ru capping layer

    NASA Astrophysics Data System (ADS)

    Lee, Seung-ho; Kang, Bong-kyun; Kim, Hyuk-min; Kim, Min-soo; Cho, Han-ku; Jeon, Chan-uk; Ko, Hyung-ho; Lee, Han-shin; Ahn, Jin-ho; Park, Jin-Goo

    2010-09-01

    The adaption of EUVL requires the development of new cleaning method for the removal of new contaminant without surface damage. One of the harsh contaminants is the carbon contamination generated during EUV exposure. This highly dense organic contaminant is hardly removed by conventional SPM solution on Ru capped Mo/Si multilayer. The hopeful candidate for this removal is ozonated water (DIO3), which is not only well-known strong oxidizer but also environmentally friendly solution. However, this solution might cause some damage to the Ru capping layer mostly depending on its concentration. For these reasons, DIO3 cleaning solutions, which are generated with various additive gases, were characterized to understand the correlation between DIO3 concentration and damages on 2.5 nm thick ruthenium (Ru) surface. An optimized DIO3 generation method and cleaning condition were developed with reduced surface damage. These phenomena were explained by electrochemical reaction.

  20. Shuttle mask floorplanning

    NASA Astrophysics Data System (ADS)

    Xu, Gang; Tian, Ruiqi; Wong, Martin D.; Reich, Alfred J.

    2003-12-01

    A shuttle mask has different chips on the same mask. The chips are not electrically connected. Alliance and foundry customers can utilize shuttle masks to share the rising cost of mask and wafer manufacturing. This paper studies the shuttle mask floorplan problem, which is formulated as a rectangle-packing problem with constraints of final die sawing strategy and die-to-die mask inspection. For our formulation, we offer a "merging" method that reduces the problem to an unconstrained slicing floorplan problem. Excellent results are obtained from the experiment with real industry data. We also study a "general" method and discuss the reason why it does not work very well.

  1. Image-based pupil plane characterization via principal component analysis for EUVL tools

    NASA Astrophysics Data System (ADS)

    Levinson, Zac; Burbine, Andrew; Verduijn, Erik; Wood, Obert; Mangat, Pawitter; Goldberg, Kenneth A.; Benk, Markus P.; Wojdyla, Antoine; Smith, Bruce W.

    2016-03-01

    We present an approach to image-based pupil plane amplitude and phase characterization using models built with principal component analysis (PCA). PCA is a statistical technique to identify the directions of highest variation (principal components) in a high-dimensional dataset. A polynomial model is constructed between the principal components of through-focus intensity for the chosen binary mask targets and pupil amplitude or phase variation. This method separates model building and pupil characterization into two distinct steps, thus enabling rapid pupil characterization following data collection. The pupil plane variation of a zone-plate lens from the Semiconductor High-NA Actinic Reticle Review Project (SHARP) at Lawrence Berkeley National Laboratory will be examined using this method. Results will be compared to pupil plane characterization using a previously proposed methodology where inverse solutions are obtained through an iterative process involving least-squares regression.

  2. Keeping African Masks Real

    ERIC Educational Resources Information Center

    Waddington, Susan

    2012-01-01

    Art is a good place to learn about our multicultural planet, and African masks are prized throughout the world as powerfully expressive artistic images. Unfortunately, multicultural education, especially for young children, can perpetuate stereotypes. Masks taken out of context lose their meaning and the term "African masks" suggests that there is…

  3. Mask degradation monitoring with aerial mask inspector

    NASA Astrophysics Data System (ADS)

    Tseng, Wen-Jui; Fu, Yung-Ying; Lu, Shih-Ping; Jiang, Ming-Sian; Lin, Jeffrey; Wu, Clare; Lifschitz, Sivan; Tam, Aviram

    2013-06-01

    As design rule continues to shrink, microlithography is becoming more challenging and the photomasks need to comply with high scanner laser energy, low CDU, and ever more aggressive RETs. This give rise to numerous challenges in the semiconductor wafer fabrication plants. Some of these challenges being contamination (mainly haze and particles), mask pattern degradation (MoSi oxidation, chrome migration, etc.) and pellicle degradation. Fabs are constantly working to establish an efficient methodology to manage these challenges mainly using mask inspection, wafer inspection, SEM review and CD SEMs. Aerial technology offers a unique opportunity to address the above mask related challenges using one tool. The Applied Materials Aera3TM system has the inherent ability to inspect for defects (haze, particles, etc.), and track mask degradation (e.g. CDU). This paper focuses on haze monitoring, which is still a significant challenge in semiconductor manufacturing, and mask degradation effects that are starting to emerge as the next challenge for high volume semiconductor manufacturers. The paper describes Aerial inspector (Aera3) early haze methodology and mask degradation tracking related to high volume manufacturing. These will be demonstrated on memory products. At the end of the paper we take a brief look on subsequent work currently conducted on the more general issue of photo mask degradation monitoring by means of an Aerial inspector.

  4. LER control and mitigation: mask roughness induced LER

    SciTech Connect

    McClinton, Brittany; Naulleau, Patrick

    2011-02-21

    In the push towards commercialization of extreme-ultraviolet lithography (EUVL), meeting the stringent requirements for line-edge roughness (LER) is increasingly challenging. For the 22-nm half-pitch node and below, the ITRS requires under 1.2 nm LER. Much of this LER is thought to arise from three significant contributors: LER on the mask absorber pattern, LER from the resist, and LER from mask roughness induced speckle. The physical mechanism behind the last contributor is becoming clearer, but how it is affected by the presence of aberrations is less well understood. Here, we conduct a full 2D aerial image simulation analysis of aberrations sensitivities of mask roughness induced LER for the first 37 fringe zernikes. These results serve as a guideline for future LER aberrations control. In examining how to mitigate mask roughness induced LER, we next consider an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a 'strip'. While this illumination surprisingly provides merely minimal improvement to the LER as several alternate illumination schemes, overall imaging quality in terms of ILS, NILS, and contrast is improved. While the 22-nm half-pitch node can tolerate significant aberrations from a mask roughness induced LER perspective, total aberration levels for the 16-nm half-pitch node need to be strictly capped at 0.25nm rms to meet the ITRS guidelines. An individual aberrations study for the first 37 fringe zernikes on the 16-nm half-pitch node at the 0.25nm rms level reveals a sensitivity to various forms of spherical aberrations (Z9 & Z25) and quadrafoil (Z28) in particular, under conventional crosspole illumination ({sigma} = 0.10). Compared to conventional dipole or crosspole illuminations, an extended dipole 'strip' illumination scheme offers a way to mitigate mask roughness induced LER, while still maintaining high imaging quality for

  5. Wafer topography modeling for ionic implantation mask correction dedicated to 2x nm FDSOI technologies

    NASA Astrophysics Data System (ADS)

    Michel, Jean-Christophe; Le Denmat, Jean-Christophe; Sungauer, Elodie; Robert, Frédéric; Yesilada, Emek; Armeanu, Ana-Maria; Entradas, Jorge; Sturtevant, John L.; Do, Thuy; Granik, Yuri

    2013-04-01

    Reflection by wafer topography and underlying layers during optical lithography can cause unwanted exposure in the resist [1]. This wafer stack effect phenomenon which is neglected for larger nodes than 45nm, is becoming problematic for 32nm technology node and below at the ionic implantation process. This phenomenon is expected to be attenuated by the use of anti-reflecting coating but increases process complexity and adds cost and cycle time penalty. As a consequence, an OPC based solution is today under evaluation to cope with stack effects involved in ionic implantation patterning [2] [3]. For the source drain (SD) ionic implantation process step on 28nm Fully Depleted Silicon-on-Insulator (FDSOI) technology, active silicon areas, poly silicon patterns, Shallow Trench Isolation (STI), Silicon-on-Insulator (SOI) areas and the transitions between these different regions result in significant SD implant pattern critical dimension variations. The large number of stack variations involved in these effects implies a complex modeling to simulate pattern degradations. This paper deals with the characterization of stack effects on 28nm node using SOI substrates. The large number of measurements allows to highlight all individual and combined stack effects. A new modeling flow has been developed in order to generate wafer stack aware OPC model. The accuracy and the prediction of the model is presented in this paper.

  6. Detecting Drawdowns Masked by Environmental Stresses with Water-Level Models

    PubMed Central

    Garcia, CA; Halford, KJ; Fenelon, JM

    2013-01-01

    Detecting and quantifying small drawdown at observation wells distant from the pumping well greatly expands the characterized aquifer volume. However, this detection is often obscured by water level fluctuations such as barometric and tidal effects. A reliable analytical approach for distinguishing drawdown from nonpumping water-level fluctuations is presented and tested here. Drawdown is distinguished by analytically simulating all pumping and nonpumping water-level stresses simultaneously during the period of record. Pumping signals are generated with Theis models, where the pumping schedule is translated into water-level change with the Theis solution. This approach closely matched drawdowns simulated with a complex three-dimensional, hypothetical model and reasonably estimated drawdowns from an aquifer test conducted in a complex hydrogeologic system. Pumping-induced changes generated with a numerical model and analytical Theis model agreed (RMS as low as 0.007 m) in cases where pumping signals traveled more than 1 km across confining units and fault structures. Maximum drawdowns of about 0.05 m were analytically estimated from field investigations where environmental fluctuations approached 0.2 m during the analysis period. PMID:23469925

  7. Cognitive Development Masks Support for Attributional Style Models of Depression in Children and Adolescents

    ERIC Educational Resources Information Center

    Weitlauf, Amy S.; Cole, David A.

    2012-01-01

    Attributional style models of depression in adults (Abramson et al. 1989, 1978) have been adapted for use with children; however, most applications do not consider that children's understanding of causal relations may be qualitatively different from that of adults. If children's causal attributions depend on children's level of cognitive…

  8. Detecting drawdowns masked by environmental stresses with water-level models

    USGS Publications Warehouse

    Garcia, C.A.; Halford, K.J.; Fenelon, J.M.

    2013-01-01

    Detecting and quantifying small drawdown at observation wells distant from the pumping well greatly expands the characterized aquifer volume. However, this detection is often obscured by water level fluctuations such as barometric and tidal effects. A reliable analytical approach for distinguishing drawdown from nonpumping water-level fluctuations is presented and tested here. Drawdown is distinguished by analytically simulating all pumping and nonpumping water-level stresses simultaneously during the period of record. Pumping signals are generated with Theis models, where the pumping schedule is translated into water-level change with the Theis solution. This approach closely matched drawdowns simulated with a complex three-dimensional, hypothetical model and reasonably estimated drawdowns from an aquifer test conducted in a complex hydrogeologic system. Pumping-induced changes generated with a numerical model and analytical Theis model agreed (RMS as low as 0.007 m) in cases where pumping signals traveled more than 1 km across confining units and fault structures. Maximum drawdowns of about 0.05 m were analytically estimated from field investigations where environmental fluctuations approached 0.2 m during the analysis period.

  9. Using synchrotron light to accelerate EUV resist and mask materials learning

    NASA Astrophysics Data System (ADS)

    Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Jones, Gideon; McClinton, Brittany; Miyakawa, Ryan; Mochi, Iacopo; Montgomery, Warren; Rekawa, Seno; Wallow, Tom

    2011-03-01

    As commercialization of extreme ultraviolet lithography (EUVL) progresses, direct industry activities are being focused on near term concerns. The question of long term extendibility of EUVL, however, remains crucial given the magnitude of the investments yet required to make EUVL a reality. Extendibility questions are best addressed using advanced research tools such as the SEMATECH Berkeley microfield exposure tool (MET) and actinic inspection tool (AIT). Utilizing Lawrence Berkeley National Laboratory's Advanced Light Source facility as the light source, these tools benefit from the unique properties of synchrotron light enabling research at nodes generations ahead of what is possible with commercial tools. The MET for example uses extremely bright undulator radiation to enable a lossless fully programmable coherence illuminator. Using such a system, resolution enhancing illuminations achieving k1 factors of 0.25 can readily be attained. Given the MET numerical aperture of 0.3, this translates to an ultimate resolution capability of 12 nm. Using such methods, the SEMATECH Berkeley MET has demonstrated resolution in resist to 16-nm half pitch and below in an imageable spin-on hard mask. At a half pitch of 16 nm, this material achieves a line-edge roughness of 2 nm with a correlation length of 6 nm. These new results demonstrate that the observed stall in ultimate resolution progress in chemically amplified resists is a materials issue rather than a tool limitation. With a resolution limit of 20-22 nm, the CAR champion from 2008 remains as the highest performing CAR tested to date. To enable continued advanced learning in EUV resists, SEMATECH has initiated a plan to implement a 0.5 NA microfield tool at the Advanced Light Source synchrotron facility. This tool will be capable of printing down to 8-nm half pitch.

  10. 2013 mask industry survey

    NASA Astrophysics Data System (ADS)

    Malloy, Matt

    2013-09-01

    A comprehensive survey was sent to merchant and captive mask shops to gather information about the mask industry as an objective assessment of its overall condition. 2013 marks the 12th consecutive year for this process. Historical topics including general mask profile, mask processing, data and write time, yield and yield loss, delivery times, maintenance, and returns were included and new topics were added. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. While each year's survey includes minor updates based on feedback from past years and the need to collect additional data on key topics, the bulk of the survey and reporting structure have remained relatively constant. A series of improvements is being phased in beginning in 2013 to add value to a wider audience, while at the same time retaining the historical content required for trend analyses of the traditional metrics. Additions in 2013 include topics such as top challenges, future concerns, and additional details in key aspects of mask masking, such as the number of masks per mask set per ground rule, minimum mask resolution shipped, and yield by ground rule. These expansions beyond the historical topics are aimed at identifying common issues, gaps, and needs. They will also provide a better understanding of real-life mask requirements and capabilities for comparison to the International Technology Roadmap for Semiconductors (ITRS).

  11. Mask industry assessment: 2004

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert V.; Hector, Scott D.

    2004-12-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of equipment for mask fabrication. This year's assessment is the third in the current series of annual reports and is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. This report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results may be used to guide future investments on critical path issues. This year's survey builds upon the 2003 survey to provide an ongoing database using the same questions as a baseline with only a few minor changes or additions. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services. Within each category are a many questions that create a detailed profile of both the business and technical status of the mask industry. This assessment includes inputs from ten major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market.

  12. Study on modeling of resist heating effect correction in EB mask writer EBM-9000

    NASA Astrophysics Data System (ADS)

    Nomura, Haruyuki; Kamikubo, Takashi; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Nakayamada, Noriaki; Anze, Hirohito; Ogasawara, Munehiro

    2015-07-01

    Resist heating effect which is caused in electron beam lithography by rise in substrate temperature of a few tens or hundreds of degrees changes resist sensitivity and leads to degradation of local critical dimension uniformity (LCDU). Increasing writing pass count and reducing dose per pass is one way to avoid the resist heating effect, but it worsens writing throughput. As an alternative way, NuFlare Technology is developing a heating effect correction system which corrects CD deviation induced by resist heating effect and mitigates LCDU degradation even in high dose per pass conditions. Our developing correction model is based on a dose modulation method. Therefore, a kind of conversion equation to modify the dose corresponding to CD change by temperature rise is necessary. For this purpose, a CD variation model depending on local pattern density was introduced and its validity was confirmed by experiments and temperature simulations. And then the dose modulation rate which is a parameter to be used in the heating effect correction system was defined as ideally irrelevant to the local pattern density, and the actual values were also determined with the experimental results for several resist types. The accuracy of the heating effect correction was also discussed. Even when deviations depending on the pattern density slightly remains in the dose modulation rates (i.e., not ideal in actual), the estimated residual errors in the correction are sufficiently small and acceptable for practical 2 pass writing with the constant dose modulation rates. In these results, it is demonstrated that the CD variation model is effective for the heating effect correction system.

  13. Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations

    SciTech Connect

    Naulleau, Patrick; George, Simi

    2011-01-26

    In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

  14. Investigating the intrinsic cleanliness of automated handling designed for EUV mask pod-in-pod systems

    NASA Astrophysics Data System (ADS)

    Brux, O.; van der Walle, P.; van der Donck, J. C. J.; Dress, P.

    2011-11-01

    Extreme Ultraviolet Lithography (EUVL) is the most promising solution for technology nodes 16nm (hp) and below. However, several unique EUV mask challenges must be resolved for a successful launch of the technology into the market. Uncontrolled introduction of particles and/or contamination into the EUV scanner significantly increases the risk for device yield loss and potentially scanner down-time. With the absence of a pellicle to protect the surface of the EUV mask, a zero particle adder regime between final clean and the point-of-exposure is critical for the active areas of the mask. A Dual Pod concept for handling EUV masks had been proposed by the industry as means to minimize the risk of mask contamination during transport and storage. SuSS-HamaTech introduces MaskTrackPro InSync as a fully automated solution for the handling of EUV masks in and out of this Dual Pod System and therefore constitutes an interface between various tools inside the Fab. The intrinsic cleanliness of each individual handling and storage step of the inner shell (EIP) of this Dual Pod and the EUV mask inside the InSync Tool has been investigated to confirm the capability for minimizing the risk of cross-contamination. An Entegris Dual Pod EUV-1000A-A110 has been used for the qualification. The particle detection for the qualification procedure was executed with the TNO's RapidNano Particle Scanner, qualified for particle sizes down to 50nm (PSL equivalent). It has been shown that the target specification of < 2 particles @ 60nm per 25 cycles has been achieved. In case where added particles were measured, the EIP has been identified as a potential root cause for Ni particle generation. Any direct Ni-Al contact has to be avoided to mitigate the risk of material abrasion.

  15. Actinic detection of multilayer defects on EUV mask blanks using LPP light source and dark-field imaging

    NASA Astrophysics Data System (ADS)

    Tezuka, Yoshihiro; Ito, Masaaki; Terasawa, Tsuneo; Tomie, Toshihisa

    2004-05-01

    The development of defect-free mask blanks including inspection is one of the big challenges for the implementation of extreme ultraviolet lithography (EUVL), especially when the introduction of EUVL is rescheduled to a later technology node. Among others, inspection of multilayer coated mask blanks with no oversight of critical defects and with minimal detection of false defects is a challenging issue for providing mask blanks free of defects or with thorough characterization of any existing defects. MIRAI Project has been developing a novel actinic (at-wavelength) inspection tool for detecting critical multilayer defects using a dark-field imaging and a laser-produced plasma (LPP) light source, expecting better sensitivity and better correlation with printability. The first experimental set up is completed for proof-of-concept (POC) demonstration using 20x Schwarzschild imaging optics and a backsideilluminated CCD. An in-house LPP light source is integrated to optimally illuminate the area of interest by EUV with a wavelength of 13.5nm. For its illuminator, a multilayer-coated elliptical mirror is used to illuminate a mask blank with the EUV that is collected within a wide solid angle from the light source. The first EUV dark-field image is obtained from a mask blank with programmed multilayer defects which are manufactured by locating well-defined patterns before depositing Mo/Si multilayer on EUV mask substrate. All the fabricated multilayer defects down to 70nm in width and 3.5nm in height are detected as clear signals that are distinguishable from the background intensity arising from the scattering by the surface roughness of the multilayer-coated mask blank. We have also detected a phase defect as low as 2nm in height. False defect count was not only zero within the area of view but also statistically confirmed to be less than one within the whole area of a mask blank assuming the extrapolation of observed fluctuation of background intensity is applicable

  16. Mask characterization for CDU budget breakdown in advanced EUV lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2012-11-01

    As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD's and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget

  17. Psychometric functions for informational masking

    NASA Astrophysics Data System (ADS)

    Lutfi, Robert A.; Kistler, Doris J.; Callahan, Michael R.; Wightman, Frederic L.

    2003-12-01

    The term informational masking has traditionally been used to refer to elevations in signal threshold resulting from masker uncertainty. In the present study, the method of constant stimuli was used to obtain complete psychometric functions (PFs) from 44 normal-hearing listeners in conditions known to produce varying amounts of informational masking. The listener's task was to detect a pure-tone signal in the presence of a broadband noise masker (low masker uncertainty) and in the presence of multitone maskers with frequencies and amplitudes that varied at random from one presentation to the next (high masker uncertainty). Relative to the broadband noise condition, significant reductions were observed in both the slope and the upper asymptote of the PF for multitone maskers producing large amounts of informational masking. Slope was affected more for some listeners and conditions while asymptote was affected more for others; consequently, neither parameter alone was highly predictive of individual thresholds or the amount of informational masking. Mean slopes and asymptotes varied nonmonotonically with the number of masker components in a manner similar to mean thresholds, particularly when the estimated effect of energetic masking on thresholds was subtracted out. As in past studies, the threshold data were well described by a model in which trial-by-trial judgments are based on a weighted sum of levels in dB at the output of independent auditory filters. The psychometric data, however, complicated the model's interpretation in two ways: First, they suggested that, depending on the listener and condition, the weights can either reflect a fixed influence of masker components on each trial or the effect of occasionally mistaking a masker component for the signal from trial to trial. Second, they indicated that in either case the variance of the underlying decision variable as estimated from PF slope is not by itself great enough to account for the observed changes

  18. Mask industry assessment: 2003

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2003-12-01

    Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was initiated in 2002 with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition.1 This paper presents the results of the second annual survey which is an enhanced version of the inaugural survey building upon its strengths and improving the weak points. The original survey was designed with the input of member company mask technologists, merchant mask suppliers, and industry equipment makers. The assessment is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the critical mask industry. An objective is to create a valuable reference to identify strengths and opportunities and to guide investments on critical-path issues. As subsequent years are added, historical profiles can also be created. This assessment includes inputs from ten major global merchant and captive mask manufacturers representing approximately 80% of the global mask market (using revenue as the measure) and making this the most comprehensive mask industry survey ever. The participating companies are: Compugraphics, Dai Nippon Printing, Dupont Photomask, Hoya, IBM, Infineon, Intel, Taiwan Mask Company, Toppan, and TSMC. Questions are grouped into five categories: General Business Profile Information; Data Processing; Yields and Yield loss Mechanisms; Delivery Time; and Returns and Services. Within each category are a multitude of questions that create a detailed profile of both the business and technical status of the mask industry.

  19. Object Substitution Masking: When Does Mask Preview Work?

    ERIC Educational Resources Information Center

    Lim, Stephen Wee Hun; Chua, Fook K.

    2008-01-01

    When a target is enclosed by a 4-dot mask that persists after the target disappears, target identification is worse than it is when the mask terminates with the target. This masking effect is attributed to object substitution masking (OSM). Previewing the mask, however, attenuates OSM. This study investigated specific conditions under which mask…

  20. Iso-sciatic point: novel approach to distinguish shadowing 3-D mask effects from scanner aberrations in extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Leunissen, Leonardus H. A.; Gronheid, Roel; Gao, Weimin

    2006-06-01

    Extreme ultraviolet lithography (EUVL) uses a reflective mask with a multilayer coating. Therefore, the illumination is an off-axis ring field system that is non-telecentric on the mask side. This non-zero angle of incidence combined with the three-dimensional mask topography results in the so-called "shadowing effect". The shadowing causes the printed CD to depend on the orientation as well as on the position in the slit and it will significantly influence the image formation [1,2]. In addition, simulations show that the Bossung curves are asymmetrical due to 3-D mask effects and their best focus depends on the shadowing angle [3]. Such tilts in the Bossung curves are usually associated with aberrations in the optical system. In this paper, we describe an approach in which both properties can be disentangled. Bossung curve simulations with varying effective angles of incidence (between 0 and 6 degrees) show that at discrete defocus offsets, the printed linewidth is independent of the incident angle (and thus independent of the shadowing effect), the so-called iso-sciatic (constant shadowing) point. For an ideal optical system this means that the size of a printed feature with a given mask-CD and orientation does not change through slit. With a suitable test structure it is possible to use this effect to distinguish between mask topography and imaging effects from aberrations through slit. Simulations for the following aberrations tested the approach: spherical, coma and astigmatism.

  1. Fast mask writers: technology options and considerations

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

    2011-04-01

    The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

  2. Mask industry assessment: 2005

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Hector, Scott

    2005-11-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of equipment for mask fabrication. This year's assessment is the fourth in the current series of annual reports and is intended to be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. This report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results may be used to guide future investments on critical path issues. This year's survey contains all of the 2004 survey questions to provide an ongoing database. Additional questions were added to the survey covering operating cost factors and equipment utilization. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services, operating cost factors and equipment utilization. Within each category are a many questions that create a detailed profile of both the business and technical status of the mask industry. This assessment includes inputs from eight major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market. This participation rate is reduced by one captive from 2004. Note: Toppan, DuPont Photomasks Inc and AMTC (new) were consolidated into one input therefore the 2004 and 2005 surveys are basically equivalent.

  3. Sensorimotor supremacy: Investigating conscious and unconscious vision by masked priming

    PubMed Central

    Ansorge, Ulrich; Neumann, Odmar; Becker, Stefanie I.; Kälberer, Holger; Cruse, Holk

    2008-01-01

    According to the sensorimotor supremacy hypothesis, conscious perception draws on motor action. In the present report, we will sketch two lines of potential development in the field of masking research based on the sensorimotor supremacy hypothesis. In the first part of the report, evidence is reviewed that masked, invisible stimuli can affect motor responses, attention shifts, and semantic processes. After the review of the corresponding evidence – so-called masked priming effects – an approach based on the sensorimotor supremacy hypothesis is detailed as to how the question of a unitary mechanism of unconscious vision can be pursued by masked priming studies. In the second part of the report, different models and theories of backward masking and masked priming are reviewed. Types of models based on the sensorimotor hypothesis are discussed that can take into account ways in which sensorimotor processes (reflected in masked priming effects) can affect conscious vision under backward masking conditions. PMID:20517513

  4. Mask and pattern characteristics

    NASA Technical Reports Server (NTRS)

    Routh, D. E.

    1972-01-01

    The use of the mask and pattern facility to include information on equipment accuracy, limitations, and pattern making capabilities is discussed. An insight is provided into potential areas of pattern applications, the sequence of mask making, as well as possible inputs and outputs available to the user.

  5. Mini Metal Masks.

    ERIC Educational Resources Information Center

    Henn, Cynthia

    2003-01-01

    Describes an art project used with kindergarten and first-grade students that focused on traditional African masks as part of a unit on the culture of West Africa. Discusses how the students created their clay masks. Includes lists of learning objectives and art materials. (CMK)

  6. Lightweight Face Mask

    NASA Technical Reports Server (NTRS)

    Cason, W. E. I.; Baucom, R. M.; Evans, R. C.

    1982-01-01

    Lightweight face mask originally developed to protect epileptic patients during seizures could have many other medical and nonmedical applications such as muscular distrophy patients, football linesmen and riot-control police. Masks are extremely lightweight, the lightest of the configurations weighing only 136 grams.

  7. Enhancement in Informational Masking

    ERIC Educational Resources Information Center

    Cao, Xiang; Richards, Virginia M.

    2012-01-01

    Purpose: The ability to detect a tone added to a random masker improves when a preview of the masker is provided. In 2 experiments, the authors explored the role that perceptual organization plays in this release from masking. Method: Detection thresholds were measured in informational masking studies. The maskers were drawn at random prior to…

  8. Mask industry assessment: 2006

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia

    2006-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the fifth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 survey. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  9. Mask industry assessment: 2009

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2009-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

  10. Mask industry assessment: 2008

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2008-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  11. Mask Industry Assessment: 2007

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

    2007-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  12. Mask industry assessment: 2002

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2002-12-01

    Microelectronics industry leaders routinely name mask technology and mask supply issues of cost and cycle time as top issues of concern. A survey was created with support from International SEMATECH (ISMT) and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of member company mask technologists, merchant mask suppliers, and industry equipment makers. This assessment can be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of our critical mask industry. It should serve as a valuable reference to identify strengths and opportunities and to guide investments on critical-path issues. Questions are grouped into five categories: General Business Profile Information; Data Processing; Yields and Yield loss Mechanisms; Delivery Time; and Returns and Services. Within each category are a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  13. A mask manufacturer's perspective on maskless lithography

    NASA Astrophysics Data System (ADS)

    Buck, Peter; Biechler, Charles; Kalk, Franklin

    2005-11-01

    successful ML2 system solves the mask cost issue and thereby reduces the need and attractiveness of ML2. Are these concerns valid? In this paper we will present a perspective on maskless lithography from the considerable "direct write" experience of a mask manufacturer. We will examine the various business models proposed for ML2 insertion as well as the key technical challenges to achieving simultaneously the throughput and the lithographic quality necessary to become economically viable. We will consider the question of the economic viability of the mask industry in a post-ML2 world and will propose possible models where the mask industry can meaningfully participate.

  14. Lithographic performance evaluation of a contaminated EUV mask after cleaning

    SciTech Connect

    George, Simi; Naulleau, Patrick; Okoroanyanwu, Uzodinma; Dittmar, Kornelia; Holfeld, Christian; Wuest, Andrea

    2009-11-16

    The effect of surface contamination and subsequent mask surface cleaning on the lithographic performance of a EUV mask is investigated. SEMATECH's Berkeley micro-field exposure tool (MET) printed 40 nm and 50 nm line and space (L/S) patterns are evaluated to compare the performance of a contaminated and cleaned mask to an uncontaminated mask. Since the two EUV masks have distinct absorber architectures, optical imaging models and aerial image calculations were completed to determine any expected differences in performance. Measured and calculated Bossung curves, process windows, and exposure latitudes for the two sets of L/S patterns are compared to determine how the contamination and cleaning impacts the lithographic performance of EUV masks. The observed differences in mask performance are shown to be insignificant, indicating that the cleaning process did not appreciably affect mask performance.

  15. Vendor Capability for Low Thermal Expansion Mask Substrates for EUV Lithography

    SciTech Connect

    Blaedel, K L; Taylor, J S; Hector, S D; Yan, P Y; Ramamoorthy, A; Brooker, P D

    2002-04-12

    Development of manufacturing infrastructure is required to ensure a commercial source of mask substrates for the timely introduction of EUVL. Improvements to the low thermal expansion materials that compose the substrate have been made, but need to be scaled to production quantities. We have been evaluating three challenging substrate characteristics to determine the state of the infrastructure for the finishing of substrates. First, surface roughness is on track and little risk is associated with achieving the roughness requirement as an independent specification. Second, with new flatness-measuring equipment just coming on line, the vendors are poised for improvement toward the SEMI P37 flatness specification. Third, significant acceleration is needed in the reduction of defect levels on substrates. The lack of high-sensitivity defect metrology at the vendors' sites is limiting progress in developing substrates for EWL.

  16. 2012 Mask Industry Survey

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Litt, Lloyd C.

    2012-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

  17. Masking by Gratings Predicted by an Image Sequence Discriminating Model: Testing Models for Perceptual Discrimination Using Repeatable Noise

    NASA Technical Reports Server (NTRS)

    Ahumada, Albert J., Jr.; Null, Cynthia H. (Technical Monitor)

    1998-01-01

    Adding noise to stimuli to be discriminated allows estimation of observer classification functions based on the correlation between observer responses and relevant features of the noisy stimuli. Examples will be presented of stimulus features that are found in auditory tone detection and visual vernier acuity. using the standard signal detection model (Thurstone scaling), we derive formulas to estimate the proportion of the observers decision variable variance that is controlled by the added noise. one is based on the probability of agreement of the observer with him/herself on trials with the same noise sample. Another is based on the relative performance of the observer and the model. When these do not agree, the model can be rejected. A second derivation gives the probability of agreement of observer and model when the observer follows the model except for internal noise. Agreement significantly less than this amount allows rejection of the model.

  18. Antibody-mediated immune suppression of erythrocyte alloimmunization can occur independently from red cell clearance or epitope masking in a murine model.

    PubMed

    Yu, Honghui; Stowell, Sean R; Bernardo, Lidice; Hendrickson, Jeanne E; Zimring, James C; Amash, Alaa; Uchikawa, Makoto; Lazarus, Alan H

    2014-09-15

    Anti-D can prevent immunization to the RhD Ag on RBCs, a phenomenon commonly termed Ab-mediated immune suppression (AMIS). The most accepted theory to explain this effect has been the rapid clearance of RBCs. In mouse models using SRBC, these xenogeneic cells are always rapidly cleared even without Ab, and involvement of epitope masking of the SRBC Ags by the AMIS-inducing Ab (anti-SRBC) has been suggested. To address these hypotheses, we immunized mice with murine transgenic RBCs expressing the HOD Ag (hen egg lysozyme [HEL], in sequence with ovalbumin, and the human Duffy transmembrane protein) in the presence of polyclonal Abs or mAbs to the HOD molecule. The isotype, specificity, and ability to induce AMIS of these Abs were compared with accelerated clearance as well as steric hindrance of the HOD Ag. Mice made IgM and IgG reactive with the HEL portion of the molecule only. All six of the mAbs could inhibit the response. The HEL-specific Abs (4B7, IgG1; GD7, IgG2b; 2F4, IgG1) did not accelerate clearance of the HOD-RBCs and displayed partial epitope masking. The Duffy-specific Abs (MIMA 29, IgG2a; CBC-512, IgG1; K6, IgG1) all caused rapid clearance of HOD RBCs without steric hindrance. To our knowledge, this is the first demonstration of AMIS to erythrocytes in an all-murine model and shows that AMIS can occur in the absence of RBC clearance or epitope masking. The AMIS effect was also independent of IgG isotype and epitope specificity of the AMIS-inducing Ab. PMID:25122924

  19. Temporal processes in prime–mask interaction: Assessing perceptual consequences of masked information

    PubMed Central

    Scharlau, Ingrid

    2008-01-01

    Visual backward masking is frequently used to study the temporal dynamics of visual perception. These dynamics may include the temporal features of conscious percepts, as suggested, for instance, by the asynchronous–updating model (Neumann, 1982) and perceptual–retouch theory ((Bachmann, 1994). These models predict that the perceptual latency of a visual backward mask is shorter than that of a like reference stimulus that was not preceded by a masked stimulus. The prediction has been confirmed by studies using temporal–order judgments: For certain asynchronies between mask and reference stimulus, temporal–order reversals are quite frequent (e.g. Scharlau, & Neumann, 2003a). However, it may be argued that these reversals were due to a response bias in favour of the mask rather than true temporal-perceptual effects. I introduce two measures for assessing latency effects that (1) are not prone to such a response bias, (2) allow to quantify the latency gain, and (3) extend the perceptual evidence from order reversals to duration/interval perception, that is, demonstrate that the perceived interval between a mask and a reference stimulus may be shortened as well as prolonged by the presence of a masked stimulus. Consequences for theories of visual masking such as asynchronous–updating, perceptual–retouch, and reentrant models are discussed. PMID:20517512

  20. Masked Photocathode for Photoinjector

    SciTech Connect

    Qiang, Ji

    2010-01-21

    In this research note, we propose a scheme to insert a photocathode inside a photoinjector for generating high brightness electron beam. Instead of mounting the photocathode onto the electrode, a masked electrode with small hole is used to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material very simple by rotating the photocathode behind the mask into the hole. This will significantly increase the usage lifetime of a photocathode. Furthermore, this also helps reduce the dark current or secondary electron emission from the photocathode. The hole on the mask also provides a transverse cut-off to the Gaussian laser profile which can be beneficial from the beam dynamics point of view.

  1. Protective Face Mask

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Mask to protect the physically impaired from injuries to the face and head has been developed by Langley Research Center. It is made of composite materials, usually graphite or boron fibers woven into a matrix. Weighs less than three ounces.

  2. Neonatal resuscitation 2: an evaluation of manual ventilation devices and face masks

    PubMed Central

    O'Donnell, C; Davis, P; Lau, R; Dargaville, P; Doyle, L; Morley, C

    2005-01-01

    Background: The key to successful neonatal resuscitation is effective ventilation. Little evidence exists to guide clinicians in their choice of manual ventilation device or face mask. The expiratory tidal volume measured at the mask (VTE(mask)) is a good estimate of the tidal volume delivered during simulated neonatal resuscitation. Aim: To compare the efficacy of (a) the Laerdal infant resuscitator and the Neopuff infant resuscitator, used with (b) round and anatomically shaped masks in a model of neonatal resuscitation. Methods: Thirty four participants gave positive pressure ventilation to a mannequin at specified pressures with each of the four device-mask combinations. Flow, inspiratory tidal volume at the face mask (VTI(mask)), VTE(mask), and airway pressure were recorded. Leakage from the mask was calculated from VTI(mask) and VTE(mask). Results: A total of 10 780 inflations were recorded and analysed. Peak inspiratory pressure targets were achieved equally with the Laerdal and Neopuff resuscitators. Positive end expiratory pressure was delivered with the Neopuff but not the Laerdal device. Despite similar peak pressures, VTE(mask) varied widely. Mask leakage was large for each combination of device and mask. There were no differences between the masks. Conclusion: During face mask ventilation of a neonatal resuscitation mannequin, there are large leaks around the face mask. Airway pressure is a poor proxy for volume delivered during positive pressure ventilation through a mask. PMID:15871989

  3. New mask technology challenges

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2001-09-01

    Mask technology development has accelerated dramatically in recent years from the glacial pace of the last three decades to the rapid and sometimes simultaneous introductions of new wavelengths and mask-based resolution enhancement techniques. The nature of the semiconductor business has also become one driven by time-to-market as an overwhelming factor in capturing market share and profit. These are among the factors that have created enormous stress on the mask industry to produce masks with enhanced capabilities, such as phase-shifting attenuators, sub-resolution assist bars, and optical proximity correction (OPC) features, while maintaining or reducing cost and cycle time. The mask can no longer be considered a commodity item that is purchased form the lowest-cost supplier. Instead, it must now be promoted as an integral part of the technical and business case for a total lithographic solution. Improving partnership between designer, mask-maker, and wafer lithographer will be the harbinger of success in finding a profitable balance of capability, cost, and cycle time. Likewise for equipment infrastructure development, stronger partnership on the international level is necessary to control development cost and mitigate schedule and technical risks.

  4. Mask Industry Assessment: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Chan, David Y.

    2010-09-01

    A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  5. Mask Industry Assessment: 2011

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2011-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the tenth in the current series of annual reports. With ongoing industry support, the report has been used as one of the baselines to gain perspective on the technical and business status of the mask and microelectronics industries. It continues to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was essentially the same as the 2005 through 2010 surveys. Questions are grouped into following categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  6. Masks: The Artist in Me

    ERIC Educational Resources Information Center

    Skophammer, Karen

    2009-01-01

    Whether masks are made from cardboard, papier-mache, metal, wood, leather, fabric, clay or any combination of these materials, they bring out the artist in people. Young children like to wear masks when they play to pretend they were another person or animal. Masks let them fantasize and be creative. The author's students made masks representing…

  7. Rates and mechanisms of optic contamination in the EUVL engineering test stand

    NASA Astrophysics Data System (ADS)

    Grunow, Philip A.; Klebanoff, Leonard E.; Graham, Samuel, Jr.; Haney, Steven J.; Clift, W. Miles

    2003-06-01

    The EUV Engineering Test Stand (ETS) is a full-field, alpha-class Extreme Ultraviolet Lithography (EUVL) tool that has demonstrated the printing of 70 nm resolution scanned images. The tool employs Mo/Si multilayer optics that reflect EUV radiation (13.4nm / 92.5eV) with ~67% peak reflectance per optic. For good reflectivity, many (≥40)Mo/Si layers must be present. Consequently, processes such as plasma-induced multilayer erosion, which reduces the number of bilayer pairs on plasma-facing optics, need to be understood. Since most materials readily absorb EUV photons, it is important to prevent contamination of mirror surfaces with EUV absorbing material. Contamination can occur by EUV photons "cracking" hydrocarbons or other species absorbed on the optical surfaces. The first ETS condenser component, referred to as C1, is coated with Mo/Si multilayers. Data collected from Mo/Si witness plates placed at the C1 position indicate erosion, using the Xe Laser Produced Plasma (LPP) spray jet, of 1 bilayer per ~15 million shots. Preliminary experiments with a filament jet yielded a significantly higher erosion rate. In the spray jet studies, erosion was found to depend sensitively on the composition of the residual background environment. Addition of low levels, ~7x10-7 Torr, of H2O to the vacuum background produced oxidation of the Si cap, and significantly slowed spray jet-induced erosion. Operation of the plasma changed the environment in the Illuminator Chamber from oxidizing to carbonizing, thereby changing the nature of the contamination found environment at the C3 optic which does not view the plasma directly (and therefore does not erode). The change in environment is attributed to plasma-induced outgassing of fluorocarbons in the Illuminator. Due to the non-zero conductance between the Illuminator and Main Chambers, fluorocarbons were also found in the Main Chamber during Xe LPP operation. RGA data are presented that document the effect. In the presence of such

  8. Comparison of different approaches for the correction of residual mask proximity effects

    NASA Astrophysics Data System (ADS)

    Mittermeier, E.; Franke, T.

    2005-11-01

    Linearity- and proximity effects do exist on actual masks even if manufactured with current state-of-the-art processes. The impact of these short-range mask effects on the results of the optical lithography for features sizes relevant in the 90nm-node is investigated. For this purpose, an approach is chosen which employs mask process simulations in combination with simulations of optical lithography. Two mask models are deduced and verified from measurement data of an existing mask process. The lithographic results are simulated using parameters of current optical- and process models. Both mask models are used to evaluate the impact of the mask proximity effects on the printing results of optical lithography for critical pattern geometries. The differences in the mask proximity characteristics lead to additional pattern-dependent CD-offtargets after wafer lithography. Additionally, a mask-process dependent sensitivity of the CD-offtarget on the presence of optical sub-resolution assist features is observed. Based on these simulation results, the efficiencies of two techniques for the correction of the mask proximity signatures are evaluated. The application of mask sub-resolution features is compared with model-based data correction on mask level. Mask sub-resolution assist features reduce the influence of the mask process significantly and provide an enhanced stability against mask process fluctuations. Data correction yields even better correction results at the cost of an increased complexity due to the susceptibility to changes of the mask processes characteristics.

  9. Mask cost of ownership for advanced lithography

    NASA Astrophysics Data System (ADS)

    Muzio, Edward G.; Seidel, Philip K.

    2000-07-01

    As technology advances, becoming more difficult and more expensive, the cost of ownership (CoO) metric becomes increasingly important in evaluating technical strategies. The International SEMATECH CoC analysis has steadily gained visibility over the past year, as it attempts to level the playing field between technology choices, and create a fair relative comparison. In order to predict mask cots for advanced lithography, mask process flows are modeled using bets-known processing strategies, equipment cost, and yields. Using a newly revised yield mode, and updated mask manufacture flows, representative mask flows can be built. These flows are then used to calculate mask costs for advanced lithography down to the 50 nm node. It is never the goal of this type of work to provide absolute cost estimates for business planning purposes. However, the combination of a quantifiable yield model with a clearly defined set of mask processing flows and a cost model based upon them serves as an excellent starting point for cost driver analysis and process flow discussion.

  10. Overview of Mask Metrology

    NASA Astrophysics Data System (ADS)

    Rice, Bryan J.; Jindal, Vibhu; Lin, C. C.; Harris-Jones, Jenah; Kwon, Hyuk Joo; Ma, Hsing-Chien; Goldstein, Michael; Chan, Yau-Wai; Goodwin, Frank

    2011-11-01

    Extreme ultraviolet (EUV) lithography is the successor to optical lithography and will enable advanced patterning in semiconductor manufacturing processes down to the 8 nm half pitch technology node and beyond. However, before EUV can successfully be inserted into high volume manufacturing a few challenges must be overcome. Central among these remaining challenges is the requirement to produce "defect free" EUV masks. Mask blank defects have been one of the top challenges in the commercialization of extreme ultraviolet (EUV) lithography. To determine defect sources and devise mitigation solutions, detailed characterization of defects is critical. However, small defects pose challenges in metrology scale-up. SEMATECH has a comprehensive metrology strategy to address any defect larger than a 20 nm core size to obtain solutions for defect-free EUV mask blanks. SEMATECH's Mask Blank Development Center has been working since 2003 to develop the technology to support defect free EUV mask blanks. Since 2003, EUV mask blank defects have been reduced from 10000 of size greater than 100 nm to about a few tens at size 70 nm. Unfortunately, today's state of the art defect levels are still about 10 to 100 times higher than needed. Closing this gap requires progress in the various processes associated with glass substrate creation and multilayer deposition. That process development improvement in turn relies upon the availability of metrology equipment that can resolve and chemically characterize defects as small as 30 nm. The current defect reduction efforts at SEMATECH have intensively included a focus on inspection and characterization. The facility boasts nearly 100M of metrology hardware, including an FEI Titan TEM, Lasertec M1350 and M7360 tools, an actinic inspection tool, AFM, SPM, and scanning auger capabilities. The newly established Auger tool at SEMATECH can run a standard 6-inch mask blank and is already providing important information on sub-100 nm defects on EUV

  11. Orion Emergency Mask Approach

    NASA Technical Reports Server (NTRS)

    Tuan, George C.; Graf, John C.

    2008-01-01

    Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction temperature and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

  12. Orion Emergency Mask Approach

    NASA Technical Reports Server (NTRS)

    Tuan, George C.; Graf, John C.

    2009-01-01

    Emergency mask approach on Orion poses a challenge to the traditional Shuttle or Station approaches. Currently, in the case of a fire or toxic spill event, the crew utilizes open loop oxygen masks that provide the crew with oxygen to breath, but also dumps the exhaled oxygen into the cabin. For Orion, with a small cabin volume, the extra oxygen will exceed the flammability limit within a short period of time, unless a nitrogen purge is also provided. Another approach to a fire or toxic spill event is the use of a filtering emergency masks. These masks utilize some form of chemical beds to scrub the air clean of toxic providing the crew safe breathing air for a period without elevating the oxygen level in the cabin. Using the masks and a form of smoke-eater filter, it may be possible to clean the cabin completely or to a level for safe transition to a space suit to perform a cabin purge. Issues with filters in the past have been the reaction time, breakthroughs, and high breathing resistance. Development in a new form of chemical filters has shown promise to make the filtering approach feasible.

  13. Anticipating and controlling mask costs within EDA physical design

    NASA Astrophysics Data System (ADS)

    Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

    2003-08-01

    For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By

  14. Visually lossless coding based on temporal masking in human vision

    NASA Astrophysics Data System (ADS)

    Adzic, Velibor; Hock, Howard S.; Kalva, Hari

    2014-02-01

    This paper presents a method for perceptual video compression that exploits the phenomenon of backward temporal masking. We present an overview of visual temporal masking and discuss models to identify portions of a video sequences masked due to this phenomenon exhibited by the human visual system. A quantization control model based on the psychophysical model of backward visual temporal masking was developed. We conducted two types of subjective evaluations and demonstrated that the proposed method up to 10% bitrate savings on top of state of the art encoder with visually identical video. The proposed methods were evaluated using HEVC encoder.

  15. Masked mycotoxins: A review

    PubMed Central

    Berthiller, Franz; Crews, Colin; Dall'Asta, Chiara; Saeger, Sarah De; Haesaert, Geert; Karlovsky, Petr; Oswald, Isabelle P; Seefelder, Walburga; Speijers, Gerrit; Stroka, Joerg

    2013-01-01

    The aim of this review is to give a comprehensive overview of the current knowledge on plant metabolites of mycotoxins, also called masked mycotoxins. Mycotoxins are secondary fungal metabolites, toxic to human and animals. Toxigenic fungi often grow on edible plants, thus contaminating food and feed. Plants, as living organisms, can alter the chemical structure of mycotoxins as part of their defence against xenobiotics. The extractable conjugated or non-extractable bound mycotoxins formed remain present in the plant tissue but are currently neither routinely screened for in food nor regulated by legislation, thus they may be considered masked. Fusarium mycotoxins (deoxynivalenol, zearalenone, fumonisins, nivalenol, fusarenon-X, T-2 toxin, HT-2 toxin, fusaric acid) are prone to metabolisation or binding by plants, but transformation of other mycotoxins by plants (ochratoxin A, patulin, destruxins) has also been described. Toxicological data are scarce, but several studies highlight the potential threat to consumer safety from these substances. In particular, the possible hydrolysis of masked mycotoxins back to their toxic parents during mammalian digestion raises concerns. Dedicated chapters of this article address plant metabolism as well as the occurrence of masked mycotoxins in food, analytical aspects for their determination, toxicology and their impact on stakeholders. PMID:23047235

  16. Apodized Phase Mask Coronagraphs

    NASA Astrophysics Data System (ADS)

    Carlotti, Alexis

    2013-01-01

    Among the optical instruments proposed to detect and characterize exoplanets, phase masks coronagraphs offer very small inner working angles. Designed for off-axis telescopes, their performance is greatly reduced when used with centrally obstructed apertures such as those of the Palomar telescope, the very large telescope, or the James Webb space telescope. However, a clear circular aperture is not the only pupil shape for which a phase mask coronagraph can work properly. In fact, for a given centrally obstructed aperture, we show that it is possible to compute optimal apodizers that help achieve stellar extinction levels similar to those obtained in the ideal case of an off-axis telescope. Trade-offs exist between these levels, the transmission of the apodizer, and the area covered by the Lyot stop. We detail the Fourier optics formalism that makes these optimizations possible, as well as a few examples of shaped pupils. Some are designed for a four-quadrants phase mask, and some others for a vortex phase mask. We also offer a comparison with a coronagraph solely composed of a shaped pupil.

  17. Competing for Consciousness: Prolonged Mask Exposure Reduces Object Substitution Masking

    ERIC Educational Resources Information Center

    Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

    2011-01-01

    In object substitution masking (OSM) a sparse, temporally trailing 4-dot mask impairs target identification, even though it has different contours from, and does not spatially overlap with the target. Here, we demonstrate a previously unknown characteristic of OSM: Observers show reduced masking at prolonged (e.g., 640 ms) relative to intermediate…

  18. Masking with faces in central visual field under a variety of temporal schedules.

    PubMed

    Daar, Marwan; Wilson, Hugh R

    2015-11-01

    With a few exceptions, previous studies have explored masking using either a backward mask or a common onset trailing mask, but not both. In a series of experiments, we demonstrate the use of faces in central visual field as a viable method to study the relationship between these two types of mask schedule. We tested observers in a two alternative forced choice face identification task, where both target and mask comprised synthetic faces, and show that a simple model can successfully predict masking across a variety of masking schedules ranging from a backward mask to a common onset trailing mask and a number of intermediate variations. Our data are well accounted for by a window of sensitivity to mask interference that is centered at around 100 ms. PMID:26381296

  19. Compensation of overlay errors due to mask bending and non-flatness for EUV masks

    NASA Astrophysics Data System (ADS)

    Chandhok, Manish; Goyal, Sanjay; Carson, Steven; Park, Seh-Jin; Zhang, Guojing; Myers, Alan M.; Leeson, Michael L.; Kamna, Marilyn; Martinez, Fabian C.; Stivers, Alan R.; Lorusso, Gian F.; Hermans, Jan; Hendrickx, Eric; Govindjee, Sanjay; Brandstetter, Gerd; Laursen, Tod

    2009-03-01

    EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budget. In addition, due to multilayer and other thin film induced stresses, EUV masks have severe bow (~1 um PV). Since there is no electrostatic chuck to flatten the mask during the e-beam write step, EUV masks are written in a bent state that can result in ~15 nm of overlay error. In this article we present the use of physically-based models of mask bending and non-flatness induced overlay errors, to compensate for pattern placement of EUV masks during the e-beam write step in a process we refer to as E-beam Writer based Overlay error Correction (EWOC). This work could result in less restrictive tolerances for the mask blank non-flatness specs which in turn would result in less blank defects.

  20. Mask defect printing mechanisms for future lithography generations

    NASA Astrophysics Data System (ADS)

    Erdmann, Andreas; Graf, Thomas; Bubke, Karsten; Höllein, Ingo; Teuber, Silvio

    2006-03-01

    Mask defects are of increasing concern for future lithography generations. The improved resolution capabilities of immersion and EUV systems increase also the sensitivity of these systems with respect to small imperfections of the mask. Advanced mask technologies such as alternating phase shift masks (AltPSM), chromeless phase shift lithography (CPL), or "thick" absorbers on EUV masks introduce new defect types. The paper presents an application of rigorous electromagnetic field modeling for the study of typical defect printing mechanisms in ArF immersion lithography and in EUV lithography. For standard imaging and mask technologies, such as binary masks or attenuated phase shift masks, small defects usually print as linewidth or critical dimension (CD) errors with the largest effect at best focus. For AltPSM, CPL masks, and EUV masks this is not always the case. Several unusual printing scenarios were observed: placement errors due to defects can become more critical than CD-errors, defects may print more critical at defocus positions different from the center of the process window, the defect printing may become asymmetric through focus, and the risk of defect printing depends on the polarization of the used light source. Several simulation examples will demonstrate these effects. Rigorous EMF simulations in combination with vector imaging simulations are very useful to understand the origins of the observed defect printing mechanisms.

  1. Mask Blank Defect Detection

    SciTech Connect

    Johnson, M A; Sommargren, G E

    2000-02-04

    Mask blanks are the substrates that hold the master patterns for integrated circuits. Integrated circuits are semiconductor devices, such as microprocessors (mPs), dynamic random access memory (DRAMs), and application specific integrated circuits (ASICs) that are central to the computer, communication, and electronics industries. These devices are fabricated using a set of master patterns that are sequentially imaged onto light-sensitive coated silicon wafers and processed to form thin layers of insulating and conductive materials on top of the wafer. These materials form electrical paths and transistors that control the flow of electricity through the device. For the past forty years the semiconductor industry has made phenomenal improvements in device functionality, compactness, speed, power, and cost. This progress is principally due to the exponential decrease in the minimum feature size of integrated circuits, which has been reduced by a factor of {radical}2 every three years. Since 1992 the Semiconductor Industry Association (SIA) has coordinated the efforts of producing a technology roadmap for semiconductors. In the latest document, ''The International Technology Roadmap for Semiconductors: 1999'', future technology nodes (minimum feature sizes) and targeted dates were specified and are summarized in Table 1. Lithography is the imaging technology for producing a de-magnified image of the mask on the wafer. A typical de-magnification factor is 4. Mask blank defects as small as one-eighth the equivalent minimum feature size are printable and may cause device failure. Defects might be the result of the surface preparation, such as polishing, or contamination due to handling or the environment. Table 2 shows the maximum tolerable defect sizes on the mask blank for each technology node. This downward trend puts a tremendous burden on mask fabrication, particularly in the area of defect detection and reduction. A new infrastructure for mask inspection will be

  2. Respiratory Source Control Using Surgical Masks With Nanofiber Media

    PubMed Central

    Skaria, Shaji D.; Smaldone, Gerald C.

    2014-01-01

    Background: Potentially infected individuals (‘source’) are sometimes encouraged to use face masks to reduce exposure of their infectious aerosols to others (‘receiver’). To improve compliance with Respiratory Source Control via face mask and therefore reduce receiver exposure, a mask should be comfortable and effective. We tested a novel face mask designed to improve breathability and filtration using nanofiber filtration. Methods: Using radiolabeled test aerosols and a calibrated exposure chamber simulating source to receiver interaction, facepiece function was measured with a life-like ventilated manikin model. Measurements included mask airflow resistance (pressure difference during breathing), filtration, (mask capture of exhaled radiolabeled test aerosols), and exposure (the transfer of ‘infectious’ aerosols from the ‘source’ to a ‘receiver’). Polydisperse aerosols were measured at the source with a mass median aerodynamic diameter of 0.95 µm. Approximately 90% of the particles were <2.0 µm. Tested facepieces included nanofiber prototype surgical masks, conventional surgical masks, and for comparison, an N95-class filtering facepiece respirator (commonly known as an ‘N95 respirator’). Airflow through and around conventional surgical face mask and nanofiber prototype face mask was visualized using Schlieren optical imaging. Results: Airflow resistance [ΔP, cmH2O] across sealed surgical masks (means: 0.1865 and 0.1791 cmH2O) approached that of the N95 (mean: 0.2664 cmH2O). The airflow resistance across the nanofiber face mask whether sealed or not sealed (0.0504 and 0.0311 cmH2O) was significantly reduced in comparison. In addition, ‘infected’ source airflow filtration and receiver exposure levels for nanofiber face masks placed on the source were comparable to that achieved with N95 placed on the source; 98.98% versus 82.68% and 0.0194 versus 0.0557, respectively. Compared to deflection within and around the conventional face

  3. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  4. [Intubating laryngeal mask].

    PubMed

    Langenstein, H; Möller, F

    1998-01-01

    To improve the success of blind intubation through a laryngeal mask, Dr. A.I.J. Brain constructed the intubating laryngeal mask airway (ILMA), marketed under the name Fastrach. The new construction allows blind intubation with highly flexible endotracheal tubes up to 8 mm ID with cuff (straight Woodbridge type), securing the airway around the intubation process and maintaining most of the characteristics of a standard laryngeal mask airway (SLMA), including contraindications. An additional contraindication is the existence of a Zenker diverticle. Up to now, eight working groups reported a success rate of blind intubation through the ILMA of more than 90% in about 1,200 patients, with a success rate of blind intubation of more than 50% for the first intubation attempt. Ten percent of the patients were difficult to intubate with the same success rate for blind intubation as in normal patients. Reduced mouth opening does not seem to hinder the use of the ILMA in spite of its increased outer diameter of 2 cm, as long as it is possible to enlarge the mouth opening to > 2 cm during anaesthesia. The new ILMA more than doubles the success of blind intubation compared to an SLMA, irrespective of a large variety of intubation difficulties. Correct judgement of endotracheal tube position is mandatory. The ILMA has the potential to be used in patients who are difficult to intubate and to substitute the SLMA in "cannot ventilate--cannot intubate" situations. The future will show if the ILMA also will improve emergency airway management by inexperienced personnel, including intubation, as has been shown for the standard laryngeal mask airway in cardiopulmonary resuscitation for ventilation only. PMID:9611362

  5. Masked multichannel analyzer

    DOEpatents

    Winiecki, A.L.; Kroop, D.C.; McGee, M.K.; Lenkszus, F.R.

    1984-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  6. Masked multichannel analyzer

    DOEpatents

    Winiecki, Alan L.; Kroop, David C.; McGee, Marilyn K.; Lenkszus, Frank R.

    1986-01-01

    An analytical instrument and particularly a time-of-flight-mass spectrometer for processing a large number of analog signals irregularly spaced over a spectrum, with programmable masking of portions of the spectrum where signals are unlikely in order to reduce memory requirements and/or with a signal capturing assembly having a plurality of signal capturing devices fewer in number than the analog signals for use in repeated cycles within the data processing time period.

  7. Mask strategy at International SEMATECH

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2002-08-01

    International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

  8. Incorporating mask topography edge diffraction in photolithography simulations.

    PubMed

    Tirapu-Azpiroz, Jaione; Yablonovitch, Eli

    2006-04-01

    In deep ultraviolet lithography simulations, conventional application of Kirchhoff's boundary conditions on the mask surface provides the so-called "thin-mask" approximation of the object field. Current subwavelength lithographic operation, however, places a serious limitation on this approximation, which fails to account for the topographical, or "thick-mask," effects. In this paper, a new simulation model is proposed that is theoretically founded on the well-established physical theory of diffraction. This model relies on the key result that diffraction effects can be interpreted as an intrinsic edge property, and modeled with just two fixed parameters: width and transmission coefficient of a locally determined boundary layer applied to each chrome edge. The proposed model accurately accounts for thick-mask effects of the fields on the mask, greatly improving the accuracy of aerial image simulations in photolithography, while maintaining a reasonable computational cost. PMID:16604762

  9. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Hector, Scott; Marmillion, Pat; Lercel, Michael

    2006-06-01

    Microelectronics industry leaders routinely name mask cost and cycle time as top issues of concern. In 2002, a survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of mask technologists from semiconductor manufacturers, merchant mask suppliers, and makers of mask equipment. The 2005 survey was the fourth in the current series of annual surveys. The survey data can be used as a baseline for the mask industry and the microelectronics industry to gain a perspective on the technical and business status of the mask industry. The results may be used to guide future investments on critical path issues. Questions are grouped into categories: general business profile information, data processing, yields and yield loss mechanisms, delivery times, returns and services, operating cost factors, and equipment utilization. Because the questions covering operating cost factors and equipment utilization were just added to the survey, no trend analysis is possible. Within each category are many questions that together create a detailed profile of both the business and technical status of the mask industry. The assessment participation has changed from year to year. The 2005 survey, for example, includes inputs from eight major global merchant and captive mask manufacturers whose revenue represents approximately 85% of the global mask market.

  10. Mask Design for the Space Interferometry Mission Internal Metrology

    NASA Technical Reports Server (NTRS)

    Marx, David; Zhao, Feng; Korechoff, Robert

    2005-01-01

    This slide presentation reviews the mask design used for the internal metrology of the Space Interferometry Mission (SIM). Included is information about the project, the method of measurements with SIM, the internal metrology, numerical model of internal metrology, wavefront examples, performance metrics, and mask design

  11. Metabolic power of European starlings Sturnus vulgaris during flight in a wind tunnel, estimated from heat transfer modelling, doubly labelled water and mask respirometry.

    PubMed

    Ward, S; Möller, U; Rayner, J M V; Jackson, D M; Nachtigall, W; Speakman, J R

    2004-11-01

    It is technically demanding to measure the energetic cost of animal flight. Each of the previously available techniques has some disadvantage as well advantages. We compared measurements of the energetic cost of flight in a wind tunnel by four European starlings Sturnus vulgaris made using three independent techniques: heat transfer modelling, doubly labelled water (DLW) and mask respirometry. We based our heat transfer model on thermal images of the surface temperature of the birds and air flow past the body and wings calculated from wing beat kinematics. Metabolic power was not sensitive to uncertainty in the value of efficiency when estimated from heat transfer modelling. A change in the assumed value of whole animal efficiency from 0.19 to 0.07 (the range of estimates in previous studies) only altered metabolic power predicted from heat transfer modelling by 13%. The same change in the assumed value of efficiency would cause a 2.7-fold change in metabolic power if it were predicted from mechanical power. Metabolic power did not differ significantly between measurements made using the three techniques when we assumed an efficiency in the range 0.11-0.19, although the DLW results appeared to form a U-shaped power-speed curve while the heat transfer model and respirometry results increased linearly with speed. This is the first time that techniques for determining metabolic power have been compared using data from the same birds flying under the same conditions. Our data provide reassurance that all the techniques produce similar results and suggest that heat transfer modelling may be a useful method for estimating metabolic rate. PMID:15531650

  12. High-etching selectivity of spin-on-carbon hard mask process for 22nm node and beyond

    NASA Astrophysics Data System (ADS)

    Iwao, Fumiko; Shimura, Satoru; Kyouda, Hideharu; Oyama, Kenichi; Yamauchi, Shohei; Hara, Arisa; Natori, Sakurako; Yaegashi, Hidetami

    2012-03-01

    As part of the trend toward finer semiconductor design rules, the resist film thickness is getting thinner, and the etching technology that uses resist masking is getting more difficult. To solve such a problem in recent years, the film structure used in the resist process also is changing from the single-layer process (BARC and resist stacked film) to the multi-layer process (Carbon hard-mask, middle layer and resist stacked film) The carbon hard-mask of multi-layer process can be divided into two kinds, which are the CVD-carbon (CVD-C) that uses the chemical vapor deposition method and Spin-on-carbon (SOC) that uses the spin-coating method. CVD-C is very attractive for ensuring the high etching selection ratio, but still has major challenges in particle reduction, lower planarization of substrate and high process cost. On the other hand, SOC is very attractive for low cost process, high level of planarization of substrate and no particles. Against this background, we verify the development of the SOC that had the high etch selection ratio by improving etching condition, material and SOC cure condition. Moreover, we can fabricate below 30nm SiO2 patterning and the possibility of development with extreme ultraviolet lithography (EUVL) was suggested. This paper reports on the results of a comprehensive process evaluation of a SOC based multi-layer technology using lithography clusters, etching tools.

  13. Overlay improvement by exposure map based mask registration optimization

    NASA Astrophysics Data System (ADS)

    Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

    2015-03-01

    Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density

  14. Masks of the Universe

    NASA Astrophysics Data System (ADS)

    Harrison, Edward

    2011-11-01

    Preface; Introducing the masks; Part I. Worlds in the Making: 1. The magic Universe; 2. The mythic Universe; 3. The geometric Universe; 4. The medieval Universe; 5. The infinite Universe; 6. The mechanistic Universe; Part II. The Heart Divine: 7. Dance of the atoms and waves; 8. Fabric of space and time; 9. Nearer to the heart's desire; 10. The cosmic tide; 11. Do dreams ever come true?; Part III. The Cloud of Unknowing: 12. The witch universe; 13. The spear of Archytas; 14. All that is made; 15. The cloud of unknowing; 16. Learned ignorance.

  15. Mask fabrication process

    DOEpatents

    Cardinale, Gregory F.

    2000-01-01

    A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

  16. A Masked Photocathode in Photoinjector

    SciTech Connect

    Qiang, Ji

    2010-12-14

    In this paper, we propose a masked photocathode inside the photoinjector for generating high brightness election beam. Instead of mounting the photocathode onto an electrode, an electrode with small hole is used as a mask to shield the photocathode from the accelerating vacuum chamber. Using such a masked photocathode will make the replacement of photocathode material easy by rotating the photocathode behind the electrode into the hole. Furthermore, this helps reduce the dark current or secondary electron emission from the photocathode material. The masked photocathode also provides transverse cut-off to a Gaussian laser beam that reduces electron beam emittance growth from nonlinear space-charge effects.

  17. Optical inspection of NGL masks

    NASA Astrophysics Data System (ADS)

    Pettibone, Donald W.; Stokowski, Stanley E.

    2004-12-01

    For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

  18. Enabling the 22nm node via grazing incidence collectors integrated into the DPP source for EUVL HVM

    NASA Astrophysics Data System (ADS)

    Bianucci, G.; Bragheri, A.; Cassol, G. L.; Ghislanzoni, R.; Mazzoleni, R.; Zocchi, F. E.

    2011-04-01

    Media Lario Technologies (MLT) has enabled the Extreme Ultraviolet Lithography (EUVL) roadmap with its grazing incidence collectors installed in all DPP sources since 2006. Furthermore, with several 100 WIF capable production grazing incidence collectors shipped in 2010, MLT is ready to support the start of High Volume Manufacturing (HVM). With a point-source collection efficiency of 25% and 6 kW power loading capability, the 9-shell collector design is capable of delivering 100 W in-band EUV power through the intermediate focus aperture. The customized reflective layer and the debris mitigation technology enable the 1-year lifetime objective under full production operating conditions. Integration of the grazing incidence collector in XTREME technologies' (XT) DPP source attached to ASML's NXE:3100 scanner has provided initial validation of the optical, thermal, and lifetime design objectives. In full HVM regime, we anticipate that the collector power loading will progressively reach 20 kW to enable 500 W inband EUV peak power at intermediate focus. We have started the development of a thermal management design maintaining the current optical stability with a collector power loading of 30 kW, thus meeting the aggressive HVM requirements.

  19. The implementation of Mask-Ed: reflections of academic participants.

    PubMed

    Reid-Searl, Kerry; Levett-Jones, Tracy; Cooper, Simon; Happell, Brenda

    2014-09-01

    This paper profiles the findings from a study that explored the perspectives and experiences of nurse educators who implemented a novel simulation approach termed Mask-Ed. The technique involves the educator wearing a silicone mask and or body parts and transforming into a character. The premise of this approach is that the masked educator has domain specific knowledge related to the simulation scenario and can transmit this to learners in a way that is engaging, realistic, spontaneous and humanistic. Nurse educators charged with the responsibility of implementing Mask-Ed in three universities were invited to participate in the study by attending an introductory workshop, implementing the technique and then journaling their experiences, insights and perspectives over a 12 month period. The journal entries were then thematically analysed. Key themes were categorised under the headings of Preparation, Implementation and Impact; Reflexivity and Responsiveness; Student Engagement and Ownership; and Teaching and Learning. Mask-Ed is a simulation approach which allows students to interact with the 'characters' in humanistic ways that promote person-centred care and therapeutic communication. This simulation approach holds previously untapped potential for a range of learning experiences, however, to be effective, adequate resourcing, training, preparation and practice is required. PMID:24906681

  20. What Is Being Masked in Object Substitution Masking?

    ERIC Educational Resources Information Center

    Gellatly, Angus; Pilling, Michael; Cole, Geoff; Skarratt, Paul

    2006-01-01

    Object substitution masking (OSM) is said to occur when a perceptual object is hypothesized that is mismatched by subsequent sensory evidence, leading to a new hypothesized object being substituted for the first. For example, when a brief target is accompanied by a longer lasting display of nonoverlapping mask elements, reporting of target…

  1. EFFECT OF MASKED REGIONS ON WEAK-LENSING STATISTICS

    SciTech Connect

    Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi

    2013-09-10

    Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation. We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple {chi}{sup 2} analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg{sup 2} survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting {chi}{sup 2}/n{sub dof} = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard {Lambda}CDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.

  2. Effect of Masked Regions on Weak-lensing Statistics

    NASA Astrophysics Data System (ADS)

    Shirasaki, Masato; Yoshida, Naoki; Hamana, Takashi

    2013-09-01

    Sky masking is unavoidable in wide-field weak-lensing observations. We study how masks affect the measurement of statistics of matter distribution probed by weak gravitational lensing. We first use 1000 cosmological ray-tracing simulations to examine in detail the impact of masked regions on the weak-lensing Minkowski Functionals (MFs). We consider actual sky masks used for a Subaru Suprime-Cam imaging survey. The masks increase the variance of the convergence field and the expected values of the MFs are biased. The bias then compromises the non-Gaussian signals induced by the gravitational growth of structure. We then explore how masks affect cosmological parameter estimation. We calculate the cumulative signal-to-noise ratio (S/N) for masked maps to study the information content of lensing MFs. We show that the degradation of S/N for masked maps is mainly determined by the effective survey area. We also perform simple χ2 analysis to show the impact of lensing MF bias due to masked regions. Finally, we compare ray-tracing simulations with data from a Subaru 2 deg2 survey in order to address if the observed lensing MFs are consistent with those of the standard cosmology. The resulting χ2/n dof = 29.6/30 for three combined MFs, obtained with the mask effects taken into account, suggests that the observational data are indeed consistent with the standard ΛCDM model. We conclude that the lensing MFs are a powerful probe of cosmology only if mask effects are correctly taken into account.

  3. Masked Proportional Routing

    NASA Technical Reports Server (NTRS)

    Wolpert, David

    2004-01-01

    Masked proportional routing is an improved procedure for choosing links between adjacent nodes of a network for the purpose of transporting an entity from a source node ("A") to a destination node ("B"). The entity could be, for example, a physical object to be shipped, in which case the nodes would represent waypoints and the links would represent roads or other paths between waypoints. For another example, the entity could be a message or packet of data to be transmitted from A to B, in which case the nodes could be computer-controlled switching stations and the links could be communication channels between the stations. In yet another example, an entity could represent a workpiece while links and nodes could represent, respectively, manufacturing processes and stages in the progress of the workpiece towards a finished product. More generally, the nodes could represent states of an entity and the links could represent allowed transitions of the entity. The purpose of masked proportional routing and of related prior routing procedures is to schedule transitions of entities from their initial states ("A") to their final states ("B") in such a manner as to minimize a cost or to attain some other measure of optimality or efficiency. Masked proportional routing follows a distributed (in the sense of decentralized) approach to probabilistically or deterministically choosing the links. It was developed to satisfy a need for a routing procedure that 1. Does not always choose the same link(s), even for two instances characterized by identical estimated values of associated cost functions; 2. Enables a graceful transition from one set of links to another set of links as the circumstances of operation of the network change over time; 3. Is preferably amenable to separate optimization of different portions of the network; 4. Is preferably usable in a network in which some of the routing decisions are made by one or more other procedure(s); 5. Preferably does not cause an

  4. Combining Simultaneous with Temporal Masking

    ERIC Educational Resources Information Center

    Hermens, Frouke; Herzog, Michael H.; Francis, Gregory

    2009-01-01

    Simultaneous and temporal masking are two frequently used techniques in psychology and vision science. Although there are many studies and theories related to each masking technique, there are no systematic investigations of their mutual relationship, even though both techniques are often applied together. Here, the authors show that temporal…

  5. Masked Repetition Priming Using Magnetoencephalography

    ERIC Educational Resources Information Center

    Monahan, Philip J.; Fiorentino, Robert; Poeppel, David

    2008-01-01

    Masked priming is used in psycholinguistic studies to assess questions about lexical access and representation. We present two masked priming experiments using MEG. If the MEG signal elicited by words reflects specific aspects of lexical retrieval, then one expects to identify specific neural correlates of retrieval that are sensitive to priming.…

  6. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia; Hughes, Greg

    2008-04-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the sixth in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 and 2006 surveys. Questions are grouped into eight categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were added to the survey only in 2005; therefore, meaningful trend analysis is not available.

  7. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2009-01-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  8. Advanced Mask Aligner Lithography (AMALITH)

    NASA Astrophysics Data System (ADS)

    Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna

    2015-03-01

    Mask aligner lithography is very attractive for less-critical lithography layers and is widely used for LED, display, CMOS image sensor, micro-fluidics and MEMS manufacturing. Mask aligner lithography is also a preferred choice the semiconductor back-end for 3D-IC, TSV interconnects, advanced packaging (AdP) and wafer-level-packaging (WLP). Mask aligner lithography is a mature technique based on shadow printing and has not much changed since the 1980s. In shadow printing lithography a geometric pattern is transferred by free-space propagation from a photomask to a photosensitive layer on a wafer. The inherent simplicity of the pattern transfer offers ease of operation, low maintenance, moderate capital expenditure, high wafers-per-hour (WPH) throughput, and attractive cost-of-ownership (COO). Advanced mask aligner lithography (AMALITH) comprises different measures to improve shadow printing lithography beyond current limits. The key enabling technology for AMALITH is a novel light integrator systems, referred to as MO Exposure Optics® (MOEO). MOEO allows to fully control and shape the properties of the illumination light in a mask aligner. Full control is the base for accurate simulation and optimization of the shadow printing process (computational lithography). Now photolithography enhancement techniques like customized illumination, optical proximity correction (OPC), phase masks (AAPSM), half-tone lithography and Talbot lithography could be used in mask aligner lithography. We summarize the recent progress in advanced mask aligner lithography (AMALITH) and discuss possible measures to further improve shadow printing lithography.

  9. Optimal mask characterization by Surrogate Wafer Print (SWaP) method

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.; Hoellein, Ingo; Peters, Jan Hendrick; Ackmann, Paul; Connolly, Brid; West, Craig

    2008-10-01

    enhancement to mask characterization quality including defectivity, dimensional control, pattern fidelity, and in-plane distortion. We present a thorough analysis of both the technical and logistical challenges coupled with an objective view of the advantages and disadvantages from both the technical and financial perspectives. The analysis and model used by the AMTC will serve to provoke other mask shops to prepare their own analyses then consider this new paradigm for mask characterization and qualification.

  10. Defect tolerant transmission lithography mask

    DOEpatents

    Vernon, Stephen P.

    2000-01-01

    A transmission lithography mask that utilizes a transparent substrate or a partially transparent membrane as the active region of the mask. A reflective single layer or multilayer coating is deposited on the membrane surface facing the illumination system. The coating is selectively patterned (removed) to form transmissive (bright) regions. Structural imperfections and defects in the coating have negligible effect on the aerial image of the mask master pattern since the coating is used to reflect radiation out of the entrance pupil of the imaging system. Similarly, structural imperfections in the clear regions of the membrane have little influence on the amplitude or phase of the transmitted electromagnetic fields. Since the mask "discards," rather than absorbs, unwanted radiation, it has reduced optical absorption and reduced thermal loading as compared to conventional designs. For EUV applications, the mask circumvents the phase defect problem, and is independent of the thermal load during exposure.

  11. The Mask Designs for Space Interferometer Mission (SIM)

    NASA Technical Reports Server (NTRS)

    Wang, Xu

    2008-01-01

    The Space Interferometer Mission (SIM) consists of three interferometers (science, guide1, and guide2) and two optical paths (metrology and starlight). The system requirements for each interferometer/optical path combination are different and sometimes work against each other. A diffraction model is developed to design and optimize various masks to simultaneously meet the system requirements of three interferometers. In this paper, the details of this diffraction model will be described first. Later, the mask design for each interferometer will be presented to demonstrate the system performance compliance. In the end, a tolerance sensitivity study on the geometrical dimension, shape, and the alignment of these masks will be discussed.

  12. A computational investigation of feedforward and feedback processing in metacontrast backward masking

    PubMed Central

    Silverstein, David N.

    2015-01-01

    In human perception studies, visual backward masking has been used to understand the temporal dynamics of subliminal vs. conscious perception. When a brief target stimulus is followed by a masking stimulus after a short interval of <100 ms, performance on the target is impaired when the target and mask are in close spatial proximity. While the psychophysical properties of backward masking have been studied extensively, there is still debate on the underlying cortical dynamics. One prevailing theory suggests that the impairment of target performance due to the mask is the result of lateral inhibition between the target and mask in feedforward processing. Another prevailing theory suggests that this impairment is due to the interruption of feedback processing of the target by the mask. This computational study demonstrates that both aspects of these theories may be correct. Using a biophysical model of V1 and V2, visual processing was modeled as interacting neocortical attractors, which must propagate up the visual stream. If an activating target attractor in V1 is quiesced enough with lateral inhibition from a mask, or not reinforced by recurrent feedback, it is more likely to burn out before becoming fully active and progressing through V2 and beyond. Results are presented which simulate metacontrast backward masking with an increasing stimulus interval and with the presence and absence of feedback activity. This showed that recurrent feedback diminishes backward masking effects and can make conscious perception more likely. One model configuration presented a metacontrast noise mask in the same hypercolumns as the target, and produced type-A masking. A second model configuration presented a target line with two parallel adjacent masking lines, and produced type-B masking. Future work should examine how the model extends to more complex spatial mask configurations. PMID:25759672

  13. Bringing mask repair to the next level

    NASA Astrophysics Data System (ADS)

    Edinger, K.; Wolff, K.; Steigerwald, H.; Auth, N.; Spies, P.; Oster, J.; Schneider, H.; Budach, M.; Hofmann, T.; Waiblinger, M.

    2014-10-01

    Mask repair is an essential step in the mask manufacturing process as the extension of 193nm technology and the insertion of EUV are drivers for mask complexity and cost. The ability to repair all types of defects on all mask blank materials is crucial for the economic success of a mask shop operation. In the future mask repair is facing several challenges. The mask minimum features sizes are shrinking and require a higher resolution repair tool. At the same time mask blanks with different new mask materials are introduced to optimize optical performance and long term durability. For EUV masks new classes of defects like multilayer and phase defects are entering the stage. In order to achieve a high yield, mask repair has to cover etch and deposition capabilities and must not damage the mask. These challenges require sophisticated technologies to bring mask repair to the next level. For high end masks ion-beam based and e-based repair technologies are the obvious choice when it comes to the repair of small features. Both technologies have their pro and cons. The scope of this paper is to review and compare the performance of ion-beam based mask repair to e-beam based mask repair. We will analyze the limits of both technologies theoretically and experimentally and show mask repair related performance data. Based on this data, we will give an outlook to future mask repair tools.

  14. Sensitivity of coded mask telescopes.

    PubMed

    Skinner, Gerald K

    2008-05-20

    Simple formulas are often used to estimate the sensitivity of coded mask x-ray or gamma-ray telescopes, but these are strictly applicable only if a number of basic assumptions are met. Complications arise, for example, if a grid structure is used to support the mask elements, if the detector spatial resolution is not good enough to completely resolve all the detail in the shadow of the mask, or if any of a number of other simplifying conditions are not fulfilled. We derive more general expressions for the Poisson-noise-limited sensitivity of astronomical telescopes using the coded mask technique, noting explicitly in what circumstances they are applicable. The emphasis is on using nomenclature and techniques that result in simple and revealing results. Where no convenient expression is available a procedure is given that allows the calculation of the sensitivity. We consider certain aspects of the optimization of the design of a coded mask telescope and show that when the detector spatial resolution and the mask to detector separation are fixed, the best source location accuracy is obtained when the mask elements are equal in size to the detector pixels. PMID:18493279

  15. Infrared Signature Masking by Air Plasma Radiation

    NASA Technical Reports Server (NTRS)

    Kruger, C. H.; Laux, C. O.

    1998-01-01

    This report describes progress during the second year of our research program on Infrared Signature Masking by Air Plasmas at Stanford University. This program is intended to investigate the masking of infrared signatures by the air plasma formed behind the bow shock of high velocity missiles. Our previous annual report described spectral measurements and modeling of the radiation emitted between 3.2 and 5.5 microns by an atmospheric pressure air plasma in chemical and thermal equilibrium at a temperature of approximately 3100 K. One of our goals was to examine the spectral emission of secondary species such as water vapor or carbon dioxide. The cold air stream injected in the plasma torch contained approximately 330 parts per million Of CO2, which is the natural CO2 concentration in atmospheric air at room temperature, and a small amount of water vapor with an estimated mole fraction of 3.8 x 10(exp -4). As can be seen from Figure 1, it was found that the measured spectrum exhibited intense spectral features due to the fundamental rovibrational bands of NO at 4.9 - 5.5 microns and the V(3) band of CO2 (antisymmetric stretch) at 4.2-4.8 microns. These observations confirmed the well-known fact that infrared signatures between 4.15 - 5.5 microns can be masked by radiative emission in the interceptor's bow-shock. Figure I also suggested that the range 3.2 - 4.15 microns did not contain any significant emission features (lines or continuum) that could mask IR signatures. However, the signal-to-noise level, close to one in that range, precluded definite conclusions. Thus, in an effort to further investigate the spectral emission in the range of interest to signature masking problem, new measurements were made with a higher signal-to-noise ratio and an extended wavelength range.

  16. Hg-Mask Coronagraph

    NASA Astrophysics Data System (ADS)

    Bourget, P.; Veiga, C. H.; Vieira Martins, R.; Assus, P.; Colas, F.

    In order to optimize the occulting process of a Lyot coronagraph and to provide a high dynamic range imaging, a new kind of occulting disk has been developed at the National Observatory of Rio de Janeiro. A mercury (Hg) drop glued onto an optical window by molecular cohesion and compressed by a pellicle film is used as the occulting disk. The minimum of the superficial tension potential function provides an optical precision (lambda/100) of the toric free surface of the mercury. This process provides a size control for the adaptation to the seeing conditions and to the apparent diameter of a resolved object, and in the case of adaptive optics, to the Airy diameter fraction needed. The occultation is a three dimensional process near the focal plane on the toric free surface that provides an apodization of the occultation. The Hg-Mask coronagraph has been projected for astrometric observations of faint satellites near to Jovian planets and works since 2000 at the 1.6 m telescope of the Pico dos Dias Observatory (OPD - Brazil).

  17. Mask materials for powder blasting

    NASA Astrophysics Data System (ADS)

    Wensink, Henk; Jansen, Henri V.; Berenschot, J. W.; Elwenspoek, Miko C.

    2000-06-01

    Powder blasting, or abrasive jet machining (AJM), is a technique in which a particle jet is directed towards a target for mechanical material removal. It is a fast, cheap and accurate directional etch technique for brittle materials such as glass, silicon and ceramics. The particle jet (which expands to about 1 cm in diameter) can be optimized for etching, while the mask defines the small and complex structures. The quality of the mask influences the performance of powder blasting. In this study we tested and compared several mask types and added a new one: electroplated copper. The latter combines a highly resistant mask material for powder blasting with the high-resolution capabilities of lithography, which makes it possible to obtain an accurate pattern transfer and small feature sizes (<50 µm).

  18. Cosmic Masks Still Dance

    NASA Astrophysics Data System (ADS)

    Block, David L.; Puerari, Ivânio; Frogel, Jay A.; Eskridge, Paul B.; Stockton, Alan; Fuchs, Burkhard

    The Hubble classification scheme of galaxies is based on their optical appearance or `masks'. As one goes from early to late type spirals, both barred and unbarred, the optical appearance will be dominated more and more by the young Population I, i.e., blue stars and dust. Atlases reveal the rich variety of responses of the Population I component of gas and dust (the mask) to the underlying, older, stellar population. However, the gaseous Population I component, may only constitute 5 percent of the dynamical mass of the galaxy. Masks of negligible mass may conceal the human face - and that of galaxy. In the near-infrared, the morphology of older star-dominated disk indicates a simple classification scheme: the dominant Fourier m-mode in the dust penetrated regime, and the associated pitch angle. A ubiquity of low m=1 and m=2 modes is confirmed. On the basis of deprojected H (1.65 μm) and K' (2.1μm) images, we propose that the evolved stellar disks may be grouped into three principal dust penetrated archetypes: those with tightly wound stellar arms characterised by pitch angles at K' of ~ 10^° (the α class), an intermediate group with pitch angles of ~ 25^° (the β class) and thirdly, those with open spirals demarcated by pitch angles at K' of ~ 40^° (the γ bin). Flat or falling rotation curves give rise to the tightly wound α class; rising rotation curves are associated with the open γ class. The observed dust penetrated classes are inextricably related to the rate of shear in the stellar disk, as determined by A/ω. Here A is the first Oort constant andω denotes the angular velocity. There is no correlation between our dust penetrated classes and optical Hubble binning; the Hubble tuning fork does not constrain the morphology of the old stellar Population II disks. NGC 3223 and NGC 7083 (both SbI-II and almost the same absolute blue magnitude) have identical Hubble types and identical luminosity classes; the dust penetrated disk of NGC 3223 has tightly

  19. Visual Masking During Pursuit Eye Movements

    ERIC Educational Resources Information Center

    White, Charles W.

    1976-01-01

    Visual masking occurs when one stimulus interferes with the perception of another stimulus. Investigates which matters more for visual masking--that the target and masking stimuli are flashed on the same part of the retina, or, that the target and mask appear in the same place. (Author/RK)

  20. Recent advances in prepellicle mask cleaning

    NASA Astrophysics Data System (ADS)

    Plambeck, Bert F.; Cerio, Mark D.; Reynolds, James A.

    1990-06-01

    Cleaning of photomasks prior to pelliclizatlon Is the most demanding of all mask cleaning operations. A single particle found under a pellicle can lead to costly and time consuming repelliclization. Improved stepper resolution and automatic post pellicle inspection systems are making the requirement even more difficult to meet. Careful anal ysi s of parti culate sou rces an d clean i n g p rocesses b y Solid State Equipment Corporation have lead to the evolution of the SSEC Model 156SC which has proven to be effective as a sub micron prepellicle mask cleaner. It uses a combination of brush surfactant high pressure water static control fluid and rapid drying to achieve superior cleaning results. In an effort to meet their cleaning requirements In a cost effective manner DuPont Photomasks has installed this system in their San Jose Facility. The system design and the evaluation techniques are described. Some experimental data is presented.

  1. New method of contour-based mask-shape compiler

    NASA Astrophysics Data System (ADS)

    Matsuoka, Ryoichi; Sugiyama, Akiyuki; Onizawa, Akira; Sato, Hidetoshi; Toyoda, Yasutaka

    2007-10-01

    We have developed a new method of accurately profiling a mask shape by utilizing a Mask CD-SEM. The method is intended to realize high accuracy, stability and reproducibility of the Mask CD-SEM adopting an edge detection algorithm as the key technology used in CD-SEM for high accuracy CD measurement. In comparison with a conventional image processing method for contour profiling, it is possible to create the profiles with much higher accuracy which is comparable with CD-SEM for semiconductor device CD measurement. In this report, we will introduce the algorithm in general, the experimental results and the application in practice. As shrinkage of design rule for semiconductor device has further advanced, an aggressive OPC (Optical Proximity Correction) is indispensable in RET (Resolution Enhancement Technology). From the view point of DFM (Design for Manufacturability), a dramatic increase of data processing cost for advanced MDP (Mask Data Preparation) for instance and surge of mask making cost have become a big concern to the device manufacturers. In a sense, it is a trade-off between the high accuracy RET and the mask production cost, while it gives a significant impact on the semiconductor market centered around the mask business. To cope with the problem, we propose the best method for a DFM solution in which two dimensional data are extracted for an error free practical simulation by precise reproduction of a real mask shape in addition to the mask data simulation. The flow centering around the design data is fully automated and provides an environment where optimization and verification for fully automated model calibration with much less error is available. It also allows complete consolidation of input and output functions with an EDA system by constructing a design data oriented system structure. This method therefore is regarded as a strategic DFM approach in the semiconductor metrology.

  2. Vector scattering analysis of TPF coronagraph pupil masks

    NASA Astrophysics Data System (ADS)

    Ceperley, Daniel P.; Neureuther, Andrew R.; Lieber, Michael D.; Kasdin, N. Jeremy; Shih, Ta-Ming

    2004-10-01

    Rigorous finite-difference time-domain electromagnetic simulation is used to simulate the scattering from proto-typical pupil mask cross-section geometries and to quantify the differences from the normally assumed ideal on-off behavior. Shaped pupil plane masks are a promising technology for the TPF coronagraph mission. However the stringent requirements placed on the optics require that the detailed behavior of the edge-effects of these masks be examined carefully. End-to-end optical system simulation is essential and an important aspect is the polarization and cross-section dependent edge-effects which are the subject of this paper. Pupil plane masks are similar in many respects to photomasks used in the integrated circuit industry. Simulation capabilities such as the FDTD simulator, TEMPEST, developed for analyzing polarization and intensity imbalance effects in nonplanar phase-shifting photomasks, offer a leg-up in analyzing coronagraph masks. However, the accuracy in magnitude and phase required for modeling a chronograph system is extremely demanding and previously inconsequential errors may be of the same order of magnitude as the physical phenomena under study. In this paper, effects of thick masks, finite conductivity metals, and various cross-section geometries on the transmission of pupil-plane masks are illustrated. Undercutting the edge shape of Cr masks improves the effective opening width to within λ/5 of the actual opening but TE and TM polarizations require opposite compensations. The deviation from ideal is examined at the reference plane of the mask opening. Numerical errors in TEMPEST, such as numerical dispersion, perfectly matched layer reflections, and source haze are also discussed along with techniques for mitigating their impacts.

  3. Microscale rarefied gas dynamics and surface interactions for EUVL and MEMS applications.

    SciTech Connect

    Gallis, Michail A.; Rader, Daniel John; Castaneda, Jaime N.; Torczynski, John Robert; Grasser, Thomas W.; Trott, Wayne Merle

    2004-11-01

    A combined experimental/modeling study was conducted to better understand the critical role of gas-surface interactions in rarefied gas flows. An experimental chamber and supporting diagnostics were designed and assembled to allow simultaneous measurements of gas heat flux and inter-plate gas density profiles in an axisymmetric, parallel-plate geometry. Measurements of gas density profiles and heat flux are made under identical conditions, eliminating an important limitation of earlier studies. The use of in situ, electron-beam fluorescence is demonstrated as a means to measure gas density profiles although additional work is required to improve the accuracy of this technique. Heat flux is inferred from temperature-drop measurements using precision thermistors. The system can be operated with a variety of gases (monatomic, diatomic, polyatomic, mixtures) and carefully controlled, well-characterized surfaces of different types (metals, ceramics) and conditions (smooth, rough). The measurements reported here are for 304 stainless steel plates with a standard machined surface coupled with argon, helium, and nitrogen. The resulting heat-flux and gas-density-profile data are analyzed using analytic and computational models to show that a simple Maxwell gas-surface interaction model is adequate to represent all of the observations. Based on this analysis, thermal accommodation coefficients for 304 stainless steel coupled with argon, nitrogen, and helium are determined to be 0.88, 0.80, and 0.38, respectively, with an estimated uncertainty of {+-}0.02.

  4. Generating mask inspection rules for advanced lithography

    NASA Astrophysics Data System (ADS)

    Badger, Karen; Broadbent, Bill; Dayal, Aditya; Gallagher, Emily; Hsiang, ChingYun; Redding, Vincent

    2005-11-01

    Semiconductor product designs are necessarily constrained by both the wafer and mask lithographic capabilities. When mask image sizes approach the exposure wavelength, optical and resist effects distort the printed images. Applying optical proximity correction (OPC) to design features on the mask compensates for diffraction effects. However, aggressive OPC introduces even smaller minimum features, adds notches and bulges, introduces sub-resolution assist features (SRAFs) and generally creates a more challenging mask design with respect to data handling, printing and inspection. Mask defect inspection is a critical part of the mask process, ensuring that the mask pattern matches the intended design. However, the inspection itself imposes constraints on mask patterns that can be inspected with high defect sensitivity but low nuisance defect counts. These additional restrictions are undesirable since they can reduce the effectiveness of the OPC. IBM and KLA-Tencor have developed a test mask methodology to investigate the inspectability limits of the 576 and 516 mask inspection systems. The test mask design contains a variety of rules or features that currently impose inspectability limits on the inspection tools, in a range of sizes. The design also incorporates many features essential for obtaining valid results, such as a user-friendly layout, multiple pattern orientations, and background patterns. The mask was built and inspected in IBM Burlington's mask house. Preliminary inspection results will be presented; they underscore the importance of understanding both the inspection tool and the mask process when restricting mask design rules.

  5. Mask roughness induced LER: a rule of thumb -- paper

    SciTech Connect

    McClinton, Brittany; Naulleau, Patrick

    2010-03-12

    Much work has already been done on how both the resist and line-edge roughness (LER) on the mask affect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and currently factor into LER limits. Here, we propose a 'rule-of-thumb' simplified solution that provides a fast and powerful method to obtain mask roughness induced LER. We present modeling data on an older generation mask with a roughness of 230 pm as well as the ultimate target roughness of 50 pm. Moreover, we consider feature sizes of 50 nm and 22 nm, and show that as a function of correlation length, the LER peaks at the condition that the correlation length is approximately equal to the resolution of the imaging optic.

  6. Comparison of ventilation and chest compression performance by bystanders using the Impact Model 730 ventilator and a conventional bag valve with mask in a model of adult cardiopulmonary arrest.

    PubMed

    Hurst, Victor; West, Sarah; Austin, Paul; Branson, Richard; Beck, George

    2007-04-01

    "Bystanders" or lay persons are typically the first caregivers to attend to a victim of out-of-hospital cardiopulmonary arrest. Astronaut crew medical officers (CMO) play a similar role to bystanders aboard the International Space Station (ISS). Studies have demonstrated the importance of bystander cardiopulmonary resuscitation (BCPR) for patient survival before the arrival of emergency medical care. Recent apprehension from bystanders about the threat of contracting communicable diseases during BCPR, however, has led to the consideration of other ventilation systems such as the bag-valve mask (BVM) and automatic transport ventilators (ATV). BVM use is called for during CPR aboard the ISS. This study evaluated the ventilation and compression performance of 40 basic CPR-trained bystanders using either a BVM (adult-sized self-inflating bag with face mask) or an ATV (Model 730 ventilator (M730), Impact Instrumentation, Inc., West Caldwell, NJ). Each two-bystander team gave BCPR to a simulated cardiopulmonary arrest victim using the 2-breath/15-compression cycle for 4 min and then switched roles for another 4-min interval. Compared to BVM use, the M730 led to significantly (p<0.05) lower number of breaths, smaller tidal volumes, airway flows, airway pressures, volume of gas entering the stomach per breath and chest compressions for the 4-min period. The M730 also enabled a bystander to meet the recommendation of 4-breath and compression cycles per minute as per Guidelines 2000. Lastly, ease-of-use scores were significantly higher for the M730 compared to the BVM. Overall, the data suggest that the M730 improves the quality of performance for a bystander performing BCPR. PMID:17175090

  7. Rewritable photochromic focal plane masks

    NASA Astrophysics Data System (ADS)

    Molinari, Emilio; Bertarelli, Chiara; Bianco, Andrea; Bortoletto, Fabio; Conconi, Paolo; Crimi, Giuseppe; Gallazzi, Maria C.; Giro, Enrico; Lucotti, Andrea; Pernechele, Claudio; Zerbi, Filippo M.; Zerbi, Giuseppe

    2003-02-01

    The application of organic photochromic materials in astronomy is opening new possibilities which we are investigating in order to design innovative devices for future instrumentation. The photochromic property of transparent/opaque transition (although in a limited wavelength range) and the changes in intrinsic refractive index have led our studies to application in astronomic spectrographs, both as focal plane mask (for MOS application) and as dispersive elements (volume phase holographic gratings, VPHG), respectively. In both cases the possibility to write and erase devices with suitable irradiation has revealed a new perspective for non-disposable and fully customizable items for spectroscopy. Pursuing this goal we have synthesized a series of novel photochromic materials belonging to the diarylethenes. They fulfill the requirements of thermal stability and fatigue resistance necessary to build functional devices. Prototypes of high contrast focal plane mask working in the H-alpha spectral region have been manufactured and characterized both in laboratory and with the AFOSC camera at Asiago telescope (1.8 m). A custom writing robot (ARATRO) which, taking imaging frames and with the aid of interactive mask design software and ad hoc control electronics, is able to write MOS masks, has been constructed. The design of the MOS masks allow the fitting in the AFOSC slit wheel. The overall set-up is ready for the sky tests.

  8. Dose masking feature for BNCT radiotherapy planning

    DOEpatents

    Cook, Jeremy L.; Wessol, Daniel E.; Wheeler, Floyd J.

    2000-01-01

    A system for displaying an accurate model of isodoses to be used in radiotherapy so that appropriate planning can be performed prior to actual treatment on a patient. The nature of the simulation of the radiotherapy planning for BNCT and Fast Neutron Therapy, etc., requires that the doses be computed in the entire volume. The "entire volume" includes the patient and beam geometries as well as the air spaces in between. Isodoses derived from the computed doses will therefore extend into the air regions between the patient and beam geometries and thus depict the unrealistic possibility that radiation deposition occurs in regions containing no physical media. This problem is solved by computing the doses for the entire geometry and then masking the physical and air regions along with the isodose contours superimposed over the patient image at the corresponding plane. The user is thus able to mask out (remove) the contour lines from the unwanted areas of the image by selecting the appropriate contour masking region from the raster image.

  9. Fabless company mask technology approach: fabless but not fab-careless

    NASA Astrophysics Data System (ADS)

    Hisamura, Toshiyuki; Wu, Xin

    2009-10-01

    There are two different foundry-fabless working models in the aspect of mask. Some foundries have in-house mask facility while others contract with merchant mask vendors. Significant progress has been made in both kinds of situations. Xilinx as one of the pioneers of fabless semiconductor companies has been continually working very closely with both merchant mask vendors and mask facilities of foundries in past many years, contributed well in both technology development and benefited from corporations. Our involvement in manufacturing is driven by the following three elements: The first element is to understand the new fabrication and mask technologies and then find a suitable design / layout style to better utilize these new technologies and avoid potential risks. Because Xilinx has always been involved in early stage of advanced technology nodes, this early understanding and adoption is especially important. The second element is time to market. Reduction in mask and wafer manufacturing cycle-time can ensure faster time to market. The third element is quality. Commitment to quality is our highest priority for our customers. We have enough visibility on any manufacturing issues affecting the device functionality. Good correlation has consistently been observed between FPGA speed uniformity and the poly mask Critical Dimension (CD) uniformity performance. To achieve FPGA speed uniformity requirement, the manufacturing process as well as the mask and wafer CD uniformity has to be monitored. Xilinx works closely with the wafer foundries and mask suppliers to improve productivity and the yield from initial development stage of mask making operations. As an example, defect density reduction is one of the biggest challenges for mask supplier in development stage to meet the yield target satisfying the mask cost and mask turn-around-time (TAT) requirement. Historically, masks were considered to be defect free but at these advanced process nodes, that assumption no longer

  10. Informational masking and musical training

    NASA Astrophysics Data System (ADS)

    Oxenham, Andrew J.; Fligor, Brian J.; Mason, Christine R.; Kidd, Gerald

    2003-09-01

    The relationship between musical training and informational masking was studied for 24 young adult listeners with normal hearing. The listeners were divided into two groups based on musical training. In one group, the listeners had little or no musical training; the other group was comprised of highly trained, currently active musicians. The hypothesis was that musicians may be less susceptible to informational masking, which is thought to reflect central, rather than peripheral, limitations on the processing of sound. Masked thresholds were measured in two conditions, similar to those used by Kidd et al. [J. Acoust. Soc. Am. 95, 3475-3480 (1994)]. In both conditions the signal was comprised of a series of repeated tone bursts at 1 kHz. The masker was comprised of a series of multitone bursts, gated with the signal. In one condition the frequencies of the masker were selected randomly for each burst; in the other condition the masker frequencies were selected randomly for the first burst of each interval and then remained constant throughout the interval. The difference in thresholds between the two conditions was taken as a measure of informational masking. Frequency selectivity, using the notched-noise method, was also estimated in the two groups. The results showed no difference in frequency selectivity between the two groups, but showed a large and significant difference in the amount of informational masking between musically trained and untrained listeners. This informational masking task, which requires no knowledge specific to musical training (such as note or interval names) and is generally not susceptible to systematic short- or medium-term training effects, may provide a basis for further studies of analytic listening abilities in different populations.

  11. Self-masking subtraction tomosynthesis

    SciTech Connect

    Chakraborty, D.P.; Yester, M.V.; Barnes, G.T.; Lakshminarayanan, A.V.

    1984-01-01

    The authors tested the image quality and dose savings of self-masking subtraction tomosynthesis (SST), which combines digital tomosynthesis with subtraction of a blurred self-mask. High-quality images of the inner ear of a head phantom were obtained at moderate dose savings. Although they were taken with linear motion, they did not exhibit the streaking due to off-fulcrum objects that is characteristic of conventional linear tomography. SST could reduce patient dose by a factor of at least 12 in examinations of the inner ear, and the mechanical aspects can be implemented with moderate modifications of existing instrumentation.

  12. Enhancing fullchip ILT mask synthesis capability for IC manufacturability

    NASA Astrophysics Data System (ADS)

    Cecil, Thomas; Ashton, Chris; Irby, David; Luan, Lan; Son, D. H.; Xiao, Guangming; Zhou, Xin; Kim, David; Gleason, Bob; Lee, H. J.; Sim, W. J.; Hong, M. J.; Jung, S. G.; Suh, S. S.; Lee, S. W.

    2011-04-01

    It is well known in the industry that the technology nodes from 30nm and below will require model based SRAF / OPC for critical layers to meet production required process windows. Since the seminal paper by Saleh and Sayegh[1][2] thirty years ago, the idea of using inverse methods to solve mask layout problems has been receiving increasing attention as design sizes have been steadily shrinking. ILT in its present form represents an attempt to construct the inverse solution to a constrained problem where the constraints are all possible phenomena which can be simulated, including: DOF, sidelobes, MRC, MEEF, EL, shot-count, and other effects. Given current manufacturing constraints and process window requirements, inverse solutions must use all possible degrees of freedom to synthesize a mask. Various forms of inverse solutions differ greatly with respect to lithographic performance and mask complexity. Factors responsible for their differences include composition of the cost function that is minimized, constraints applied during optimization to ensure MRC compliance and limit complexity, and the data structure used to represent mask patterns. In this paper we describe the level set method to represent mask patterns, which allows the necessary degrees of freedom for required lithographic performance, and show how to derive Manhattan mask patterns from it, which can be manufactured with controllable complexity and limited shot-counts. We will demonstrate how full chip ILT masks can control e-beam write-time to the level comparable to traditional OPC masks, providing a solution with maximized lithographic performance and manageable cost of ownership that is vital to sub-30nm node IC manufacturing.

  13. Recovery of EUVL substrates

    SciTech Connect

    Vernon, S.P.; Baker, S.L.

    1995-01-19

    Mo/Si multilayers, were removed from superpolished zerodur and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.

  14. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  15. "The Mask Who Wasn't There": Visual Masking Effect with the Perceptual Absence of the Mask

    ERIC Educational Resources Information Center

    Rey, Amandine Eve; Riou, Benoit; Muller, Dominique; Dabic, Stéphanie; Versace, Rémy

    2015-01-01

    Does a visual mask need to be perceptually present to disrupt processing? In the present research, we proposed to explore the link between perceptual and memory mechanisms by demonstrating that a typical sensory phenomenon (visual masking) can be replicated at a memory level. Experiment 1 highlighted an interference effect of a visual mask on the…

  16. Physiological functioning of the ear and masking

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The physiological functions of the ear and the role masking plays in speech communication are examined. Topics under investigation include sound analysis of the ear, the aural reflex, and various types of noise masking.

  17. Method for mask repair using defect compensation

    DOEpatents

    Sweeney, Donald W.; Ray-Chaudhuri, Avijit K.

    2001-01-01

    A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.

  18. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  19. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  20. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  1. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  2. 21 CFR 868.5580 - Oxygen mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Oxygen mask. 868.5580 Section 868.5580 Food and... ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5580 Oxygen mask. (a) Identification. An oxygen mask is a device placed over a patient's nose, mouth, or tracheostomy to administer oxygen or aerosols. (b)...

  3. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... operating in the frequency bands governed under this part. Applicable Emission Masks Frequency band(MHz) Mask for equipment with Audio low passfilter Mask for equipment without audio low pass filter Below 25... the output power (P in watts) of the transmitter as follows: (1) On any frequency removed from...

  4. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... operating under this part. Applicable Emission Masks Frequency band (MHz) Mask for equipmentwith audio low pass filter Mask for equipmentwithout audio low pass filter Below 25 1 A or B A or C 25-50 B C 72-76 B... watts) of the transmitter as follows: (1) On any frequency removed from the assigned frequency by...

  5. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... operating in the frequency bands governed under this part. Applicable Emission Masks Frequency band(MHz) Mask for equipment with Audio low passfilter Mask for equipment without audio low pass filter Below 25... the output power (P in watts) of the transmitter as follows: (1) On any frequency removed from...

  6. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... operating under this part. Applicable Emission Masks Frequency band (MHz) Mask for equipmentwith audio low pass filter Mask for equipmentwithout audio low pass filter Below 25 1 A or B A or C 25-50 B C 72-76 B... watts) of the transmitter as follows: (1) On any frequency removed from the assigned frequency by...

  7. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  8. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  9. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  10. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  11. 21 CFR 868.5600 - Venturi mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Venturi mask. 868.5600 Section 868.5600 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5600 Venturi mask. (a) Identification. A venturi mask is...

  12. Masks: Escape to/from Reality.

    ERIC Educational Resources Information Center

    Kavett, Hyman

    1981-01-01

    Explains the significance of masks in ethnographic and cultural research and suggests 24 activities intended for use by social studies classroom teachers as they teach about masks. Activities include projecting slides onto students' bodies and faces, directing students to create masks from old clothing and rags, cutting faces from magazines, and…

  13. Mask qualification strategies in a wafer fab

    NASA Astrophysics Data System (ADS)

    Jaehnert, Carmen; Kunowski, Angela

    2007-02-01

    Having consistent high quality photo masks is one of the key factors in lithography in the wafer fab. Combined with stable exposure- and resist processes, it ensures yield increases in production and fast learning cycles for technology development and design evaluation. Preventive controlling of incoming masks and quality monitoring while using the mask in production is essential for the fab to avoid yield loss or technical problems caused by mask issues, which eventually result in delivery problems to the customer. In this paper an overview of the procedures used for mask qualification and production release, for both logic and DRAM, at Infineon Dresden is presented. Incoming qualification procedures, such as specification checks, incoming inspection, and inline litho process window evaluation, are described here. Pinching and electrical tests, including compatibility tests for mask copies for high volume products on optimized litho processes, are also explained. To avoid mask degradation over lifetime, re-inspection checks are done for re-qualification while using the mask in production. The necessity of mask incoming inspection and re-qualification, due to the repeater printing from either the processing defects of the original mask or degrading defects of being used in the fab (i.e. haze, ESD, and moving particles, etc.), is demonstrated. The need and impact of tight mask specifications, such as CD uniformity signatures and corresponding electrical results, are shown with examples of mask-wafer CD correlation.

  14. Local masking in natural images: a database and analysis.

    PubMed

    Alam, Md Mushfiqul; Vilankar, Kedarnath P; Field, David J; Chandler, Damon M

    2014-01-01

    Studies of visual masking have provided a wide range of important insights into the processes involved in visual coding. However, very few of these studies have employed natural scenes as masks. Little is known on how the particular features found in natural scenes affect visual detection thresholds and how the results obtained using unnatural masks relate to the results obtained using natural masks. To address this issue, this paper describes a psychophysical study designed to obtain local contrast detection thresholds for a database of natural images. Via a three-alternative forced-choice experiment, we measured thresholds for detecting 3.7 cycles/° vertically oriented log-Gabor noise targets placed within an 85 × 85-pixels patch (1.9° patch) drawn from 30 natural images from the CSIQ image database (Larson & Chandler, Journal of Electronic Imaging, 2010). Thus, for each image, we obtained a masking map in which each entry in the map denotes the root mean squared contrast threshold for detecting the log-Gabor noise target at the corresponding spatial location in the image. From qualitative observations we found that detection thresholds were affected by several patch properties such as visual complexity, fineness of textures, sharpness, and overall luminance. Our quantitative analysis shows that except for the sharpness measure (correlation coefficient of 0.7), the other tested low-level mask features showed a weak correlation (correlation coefficients less than or equal to 0.52) with the detection thresholds. Furthermore, we evaluated the performance of a computational contrast gain control model that performed fairly well with an average correlation coefficient of 0.79 in predicting the local contrast detection thresholds. We also describe specific choices of parameters for the gain control model. The objective of this database is to provide researchers with a large ground-truth dataset in order to further investigate the properties of the human visual

  15. Object Substitution Masking Induced by Illusory Masks: Evidence for Higher Object-Level Locus of Interference

    ERIC Educational Resources Information Center

    Hirose, Nobuyuki; Osaka, Naoyuki

    2009-01-01

    A briefly presented target can be rendered invisible by a lingering sparse mask that does not even touch it. This form of visual backward masking, called object substitution masking, is thought to occur at the object level of processing. However, it remains unclear whether object-level interference alone produces substitution masking because…

  16. Performance of GFIS mask repair system for various mask materials

    NASA Astrophysics Data System (ADS)

    Aramaki, Fumio; Kozakai, Tomokazu; Matsuda, Osamu; Yasaka, Anto; Yoshikawa, Shingo; Kanno, Koichi; Miyashita, Hiroyuki; Hayashi, Naoya

    2014-10-01

    We have developed a new focused ion beam (FIB) technology using a gas field ion source (GFIS) for mask repair. Meanwhile, since current high-end photomasks do not have high durability in exposure nor cleaning, some new photomask materials are proposed. In 2012, we reported that our GFIS system had repaired a representative new material "A6L2". It is currently expected to extend the application range of GFIS technology for various new materials and various defect shapes. In this study, we repaired a single bridge, a triple bridge and a missing hole on a phase shift mask (PSM) of "A6L2", and also repaired single bridges on a binary mask of molybdenum silicide (MoSi) material "W4G" and a PSM of high transmittance material "SDC1". The etching selectivity between those new materials and quartz were over 4:1. There were no significant differences of pattern shapes on scanning electron microscopy (SEM) images between repair and non-repair regions. All the critical dimensions (CD) at repair regions were less than +/-3% of those at normal ones on an aerial image metrology system (AIMS). Those results demonstrated that GFIS technology is a reliable solution of repairing new material photomasks that are candidates for 1X nm generation.

  17. Mask blank defect printability comparison using optical and SEM mask and wafer inspection and bright field actinic mask imaging

    NASA Astrophysics Data System (ADS)

    Mangat, Pawitter; Verduijn, Erik; Wood, Obert R.; Benk, Markus P.; Wojdyla, Antoine; Goldberg, Kenneth A.

    2015-07-01

    Despite significant enhancements in defect detection using optical and e-beam methodology, the smaller length scales and increasing challenges of future technology nodes motivate ongoing research into the need and associated cost of actinic inspection for EUV masks. This paper reports an extensive study of two EUV patterned masks, wherein the mask blank defectivity was characterized using optical (mask and wafer) methods and bright-field mask imaging (using the SHARP actinic microscope) of previously identified blank defects. We find that the bright field actinic imaging tool microscope captures and images many defects that are not seen by the automated optical inspection of patterned masks and printed wafers. In addition, actinic review reveals the impact of multilayer damage and depicts the printability profile which can be used as an added metric to define the patterned mask repair and defect compensation strategies.

  18. Aperture masking behind AO systems

    NASA Astrophysics Data System (ADS)

    Ireland, Michael J.

    2012-07-01

    Sparse Aperture-Mask Interferometry (SAM or NRM) behind Adaptive Optics (AO) has now come of age, with more than a dozen astronomy papers published from several 5-10m class telescopes around the world. I will describe the reasons behind its success in achieving relatively high contrasts ( 1000:1 at lambda/ D) and repeatable binary astronomy at the diffraction limit, even when used behind laser-guide star adaptive optics. Placed within the context of AO calibration, the information in an image can be split into pupil-plane phase, Fourier amplitude and closure-phase. It is the closure-phase observable, or its generalisation to Kernel phase, that is immune to pupil-plane phase errors at first and second-order and has been the reason for the technique's success. I will outline the limitations of the technique and the prospects for aperture-masking and related techniques in the future.

  19. Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations

    NASA Astrophysics Data System (ADS)

    Zakharov, S. V.; Zakharov, V. S.; Choi, P.; Krukovskiy, A. Y.; Novikov, V. G.; Solomyannaya, A. D.; Berezin, A. V.; Vorontsov, A. S.; Markov, M. B.; Parot'kin, S. V.

    2011-04-01

    In the specifications for EUV sources, high EUV power at IF for lithography HVM and very high brightness for actinic mask and in-situ inspections are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limit the in-band radiance of the plasma and the usable radiation power of a conventional single unit EUV source. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources, particularly for EUVL. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting Conversion Efficiencies are considered. The generation of fast electrons, ions and neutrals is discussed. Conditions for the enhanced radiance of highly ionized plasma in the presence of fast electrons are evaluated. The modelling results are guiding a new generation of EUV sources being developed at Nano-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for both lithography HVM and actinic metrology applications.

  20. Improving vision by pupil masking.

    PubMed

    Bonaque-González, Sergio; Ríos-Rodríguez, Susana; López-Gil, Norberto

    2016-07-01

    We propose an alternative solution to improve visual quality by spatially modulating the amplitude of light passing into the eye (related to the eye's transmittance), in contrast to traditional correction of the wavefront phase (related to the local refractive power). Numerical simulations show that masking the aberrated areas at the pupil plane should enhance visual function, especially in highly aberrated eyes. This correction could be implemented in practice using customized contact or intraocular lenses. PMID:27446688

  1. Improving vision by pupil masking

    PubMed Central

    Bonaque-González, Sergio; Ríos-Rodríguez, Susana; López-Gil, Norberto

    2016-01-01

    We propose an alternative solution to improve visual quality by spatially modulating the amplitude of light passing into the eye (related to the eye's transmittance), in contrast to traditional correction of the wavefront phase (related to the local refractive power). Numerical simulations show that masking the aberrated areas at the pupil plane should enhance visual function, especially in highly aberrated eyes. This correction could be implemented in practice using customized contact or intraocular lenses. PMID:27446688

  2. Mask pattern generator employing EPL technology

    NASA Astrophysics Data System (ADS)

    Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

    2003-08-01

    Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

  3. Process capability of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  4. Cortical correlate of pattern backward masking.

    PubMed Central

    Kovács, G; Vogels, R; Orban, G A

    1995-01-01

    The perception of a briefly presented shape is strongly impaired when it is followed by another pattern, a phenomenon called backward masking. We found that the vast majority of a sample of shape-selective neurons in the macaque inferior temporal cortex respond selectively to backward-masked shapes, although these shapes could not be discriminated by human and monkey subjects. However, this selective response was brief, since it was either interrupted by the mask or overridden by a response to the mask itself. We show that reliable discrimination of briefly presented shapes by single neurons depends on the temporal integration of the response. Presentation of the mask, however, reduces the number of spikes available for integration, explaining backward masking. These results also provide direct neurophysiological evidence for the "interruption theory" of backward masking. PMID:7777553

  5. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... as follows: (1) Front-mounted or back-mounted gas mask. A gas mask which consists of a full facepiece.... (2) Chin-style gas mask. A gas mask which consists of a full facepiece, a canister which is usually attached to the facepiece, and associated connections. (3) Escape gas mask. A gas mask designed for...

  6. Multiple beam mask writers: an industry solution to the write time crisis

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.

    2010-09-01

    The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

  7. Fabrication and commercialization of scalpel masks

    NASA Astrophysics Data System (ADS)

    Novembre, Anthony E.; Peabody, Milton L., Jr.; Blakey, Myrtle I.; Farrow, Reginald C.; Kasica, Richard J.; Liddle, James A.; Saunders, Thomas E.; Tennant, Donald M.

    1998-09-01

    SCALPEL masks have been fabricated for use in the Proof-of- Lithography system and to demonstrate the feasibility of having them produced by a commercial blank manufacturer and optical mask shops. Masks blanks are formed from 100 mm diameter silicon wafers. A 100-150 nm thick SiNx layer is LPCVD deposited onto the wafers followed by magnetron sputter deposition of a thin Cr/W metal layer which is used as the scatterer layer for the mask>the mask is supported by an underlying network of struts which are arranged to be compatible with the step and scan writing strategy of the exposure tool and to provide robustness to the mask. Crystallographic wet etching of the silicon wafer forms membranes and struts. To date over 300 mask blanks have been formed and yield data as a function of the thickness of the silicon nitride membrane has been quantified. Recent developments in the mask blank formation process include the production of blanks by MCNC who serve as a commercial source of SCALPEL mask blanks. They have successfully delivered 36 blanks that exhibit equivalent properties to those produced at Lucent. Mask patterning has been performed at the commercial optical mask shops of PHOTRONICS and DUPONT. In this investigation a MEBES exposure system has been used to write patterns. The resist used is ZEP-520 and development and pattern transfer processes are performed in the STEAG-Hammatech spray/spin processing tool. Metrology is performed using a KMS 310 RT optical microscope. Pattern placement accuracy is measured on the LMS 2020 system without modification. The masks are inspected for defects using the optical based KLA 300 series inspection system in a die to die mode and in transmission. Results to date suggest feasibility of producing SCALPEL masks by a commercial blank supplier and by merchant optical mask shops.

  8. Comparative Study of Manufacturing Techniques for Coronagraphic Binary Pupil Masks: Masks on Substrates and Free-Standing Masks

    NASA Astrophysics Data System (ADS)

    Enya, Keigo; Haze, Kanae; Kotani, Takayuki; Abe, Lyu

    2012-12-01

    We present a comparative study of the manufacture of binary pupil masks for coronagraphic observations of exoplanets. A checkerboard mask design, a type of binary pupil mask design, was adopted, and identical patterns of the same size were used for all masks in order that we could compare the differences resulting from the different manufacturing methods. The masks on substrates had aluminum checkerboard patterns with thicknesses of 0.1/0.2/0.4/0.8/1.6μm, constructed on substrates of BK7 glass, silicon, and germanium using photolithography and chemical processes. Free-standing masks made of copper and nickel with thicknesses of 2/5/10/20μm were also realized using photolithography and chemical processes, which included careful release from the substrate used as an intermediate step in the manufacture. Coronagraphic experiments using a visible laser were carried out for all masks on BK7 glass substrate and the free-standing masks. The average contrasts were 8.4 × 10-8, 1.2 × 10-7, and 1.2 × 10-7 for the masks on BK7 substrates, the free-standing copper masks, and the free-standing nickel masks, respectively. No significant correlation was concluded between the contrast and the mask properties. The high-contrast masks have the potential to cover the needs of coronagraphs for both ground-based and space-borne telescopes over a wide wavelength range. Especially, their application to the infrared space telescope, SPICA, is appropriate.

  9. Facial skin beautification using adaptive region-aware masks.

    PubMed

    Liang, Lingyu; Jin, Lianwen; Li, Xuelong

    2014-12-01

    In this paper, we propose a unified facial beautification framework with respect to skin homogeneity, lighting, and color. A novel region-aware mask is constructed for skin manipulation, which can automatically select the edited regions with great precision. Inspired by the state-of-the-art edit propagation techniques, we present an adaptive edge-preserving energy minimization model with a spatially variant parameter and a high-dimensional guided feature space for mask generation. Using region-aware masks, our method facilitates more flexible and accurate facial skin enhancement while the complex manipulations are simplified considerably. In our beautification framework, a portrait is decomposed into smoothness, lighting, and color layers by an edge-preserving operator. Next, facial landmarks and significant features are extracted as input constraints for mask generation. After three region-aware masks have been obtained, a user can perform facial beautification simply by adjusting the skin parameters. Furthermore, the combinations of parameters can be optimized automatically, depending on the data priors and psychological knowledge. We performed both qualitative and quantitative evaluation for our method using faces with different genders, races, ages, poses, and backgrounds from various databases. The experimental results demonstrate that our technique is superior to previous methods and comparable to commercial systems, for example, PicTreat, Portrait+ , and Portraiture. PMID:24710839

  10. Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication

    NASA Astrophysics Data System (ADS)

    Akeno, Kiminobu; Ogasawara, Munehiro; Ooki, Kenji; Tojo, Toru; Hirano, Ryoichi; Yoshitake, Shusuke; Toriumi, Masaki; Sekine, Akihiko; Takigawa, Tadahiko; Shinoda, Toshiki; Noguchi, Shigeru

    2002-09-01

    An in-situ measurement system for particles in an electron beam (EB) writer is developed to improve mask yield management. The system has satisfied the required installation specifications for a mask blank inspection system for the EB writer, and the results of an experiment using the system prove that particles added from the mask handling system in our EB writer satisfy the total particle count specification (<1.25 counts/cycle for 6 inch mask). The investigation of particle increase after repeated mask movement has been carried out in each segmented mask handling route. It has been clarified that the segmentation test using this system is helpful for investigation of the origin of particle production on a mask. Effective application of information such as particle position and size obtained by this system will be very useful for improving mask yield management in the mask fabrication process in terms of pattern inspection and repair system.

  11. High performance mask fabrication process for the next-generation mask production

    NASA Astrophysics Data System (ADS)

    Yagawa, Keisuke; Ugajin, Kunihiro; Suenaga, Machiko; Kobayashi, Yoshihito; Motokawa, Takeharu; Hagihara, Kazuki; Saito, Masato; Itoh, Masamitsu

    2014-07-01

    ArF immersion lithography combined with double patterning has been used for fabricating below half pitch 40nm devices. However, when pattern size shrinks below 20nm, we must use new technology like quadruple patterning process or next generation lithography (NGL) solutions. Moreover, with change in lithography tool, next generation mask production will be needed. According to ITRS 2013, fabrication of finer patterns less than 15nm will be required on mask plate in NGL mask production 5 years later [1]. In order to fabricate finer patterns on mask, higher resolution EB mask writer and high performance fabrication process will be required. In a previous study, we investigated a potential of mask fabrication process for finer patterning and achieved 17nm dense line pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer and chemically amplified resist [2][3]. After a further investigation, we constructed higher performance mask process by using new EB mask writer EBM9000. EBM9000 is the equipment supporting hp16nm generation's photomask production and has high accuracy and high throughput. As a result, we achieved 15.5nm pattern on mask with high productivity. Moreover, from evaluation of isolated pattern, we proved that current mask process has the capability for sub-10nm pattern. These results show that the performance of current mask fabrication process have the potential to fabricate the next-generation mask.

  12. BAYESIAN INSIGHTS ON DISCLOSURE LIMITATION: MASK OR IMPUTE?

    SciTech Connect

    S. KELLER-MCNULTY; G. DUNCAN

    2000-10-01

    Statistical agencies seek to disseminate useful data while keeping low the risk of statistical confidentiality disclosure. Recognizing that reidentification of data is generally inadequate to protect its confidentiality against attack by a data snooper, agencies restrict the data they release for general use. Typically, these restricted data procedures have involved transformation or masking of the original, collected data through such devices as adding noise, topcoding, data swapping, and recoding. Recently, proposals have been put forth for the release of synthetic data, simulated from models constructed from the original data. This paper gives a framework for the comparison of masking and synthetic data as two approaches to disclosure limitation. Particular attention is paid to data utility and disclosure risk. Examples of instantiation of masking and of synthetic data construction are provided to illustrate the concepts. Particular attention is paid to data swapping. Insights drawn from the Bayesian paxadigm are provided.

  13. Taste masked thin films printed by jet dispensing.

    PubMed

    Scoutaris, Nikolaos; Snowden, Martin; Douroumis, Dennis

    2015-10-30

    Taste masking of bitter active substances is an emerging area in the pharmaceutical industry especially for paediatric/geriatric medications. In this study we introduce the use of jet dispensing as a taste masking technology by printing mucosal thin films of three model bitter substances, Cetirizine HCl, Diphenylhydramine HCl and Ibuprofen. The process was used to dispense aqueous drugs/polymer solutions at very high speed where eventually the drugs were embedded in the polymer matrix. The in vivo evaluation of jet-dispensed mucosal films showed excellent taste masking for drug loadings from 20 to 40%. Jet dispensing was proved to make uniform, accurate and reproducible thin films with excellent content uniformity. PMID:25957704

  14. RET masks for the final frontier of optical lithography

    NASA Astrophysics Data System (ADS)

    Chen, J. F.; van den Broeke, Douglas; Hsu, Stephen; Hsu, Michael C. W.; Laidig, Tom; Shi, Xuelong; Chen, Ting; Socha, Robert J.; Hollerbach, Uwe; Wampler, Kurt E.; Park, Jungchul; Park, Sangbong; Gronlund, Keith

    2005-06-01

    With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today"s advanced lithography for DRAM/Flash is operating at k1 close to 0.3. The manufacturing for leading edge logic devices does not follow too far behind. Patterning at near theoretical lithography imaging limit (k1=0.25) even with hyper NA optics, the attainable aerial image contrast is marginal at best for the critical feature. Thus, one of the key objectives for low k1 lithography is to ensure the printing performance of critical features for manufacturing. Resolution enhancement technology (RET) mask in combination with hyper NA and illumination optimization is one primary candidate to enable lithography manufacturing at very low k1 factor. The use of rule-based Scattering Bars (SB) for all types of phase-shifting masks has become the de facto OPC standard since 180nm node. Model-based SB OPC method derives from interference mapping lithography (IML) has shown impressive printing result for both clear (gate) and dark field (contact and via) mask types. There are four basic types of RET mask candidates for 65nm node, namely, alternating phase-shifting mask (altPSM), attenuated PSM (attPSM), chromeless phase lithography (CPL) PSM, and double dipole lithography (DDL) using binary chrome mask. The wafer printing performances from CPL and DDL have proven both are strong candidates for 45nm nodes. One concern for using RET masks to target 45 nm nodes is likely to be the scaling for SB dimension for 4X mask. To assist imaging effectively with high NA, SB cannot be too small in width. However, for SB to be larger than sub-resolution, they can easily cause unwanted SB printing. The other major concern is the unwanted side lobe printing. This may occur for semi-dense pitch ranges under high NA and strong off-axis-illumination (OAI). Looking ahead

  15. Mask data volume: explosion or damp squib?

    NASA Astrophysics Data System (ADS)

    Spence, Chris; Goad, Scott; Buck, Peter; Gladhill, Richard; Cinque, Russell

    2005-11-01

    Mask data file sizes are increasing as we move from technology generation to generation. The historical 30% linear shrink every 2-3 years that has been called Moore's Law, has driven a doubling of the transistor budget and hence feature count. The transition from steppers to step-and-scan tools has increased the area of the mask that needs to be patterned. At the 130nm node and below, Optical Proximity Correction (OPC) has become prevalent, and the edge fragmentation required to implement OPC leads to an increase in the number of polygons required to define the layout. Furthermore, Resolution Enhancement Techniques (RETs) such as Sub-Resolution Assist Features (SRAFs) or tri-tone Phase Shift Masks (PSM) require additional features to be defined on the mask which do not resolve on the wafer, further increasing masks volumes. In this paper we review historical data on mask file sizes for microprocessor designs. We consider the consequences of this increase in file size on Mask Data Prep (MDP) activities, both within the Integrated Device Manufacturer (IDM) and Mask Shop, namely: computer resources, storage and networks (for file transfer). The impact of larger file sizes on mask writing times is also reviewed. Finally we consider, based on the trends that have been observed over the last 5 technology nodes, what will be required to maintain reasonable MDP and mask manufacturing cycle times.

  16. Early, Equivalent ERP Masked Priming Effects for Regular and Irregular Morphology

    ERIC Educational Resources Information Center

    Morris, Joanna; Stockall, Linnaea

    2012-01-01

    Converging evidence from behavioral masked priming (Rastle & Davis, 2008), EEG masked priming (Morris, Frank, Grainger, & Holcomb, 2007) and single word MEG (Zweig & Pylkkanen, 2008) experiments has provided robust support for a model of lexical processing which includes an early, automatic, visual word form based stage of morphological parsing…

  17. Mask roughness and its implications for LER at the 22- and 16-nm nodes

    SciTech Connect

    Naulleau, Patrick; George, Simi A.; McClinton, Brittany M.

    2010-02-16

    Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

  18. The influence of an electrostatic pin chuck on EUV mask flatness

    NASA Astrophysics Data System (ADS)

    Dicks, Gerald A.; Mikkelson, Andrew R.; Engelstad, Roxann L.

    2004-12-01

    The development of a low-distortion mask is of prime importance to Extreme Ultraviolet (EUV) Lithography. The mask consists of a standard ultra low expansion (ULE®) substrate measuring 152.4 mm x 152.4 mm x 6.35 mm, with a 280 nm thick reflective multilayer deposited on the top surface. Nonflatness of the mask patterned surface will manifest itself as image placement errors on the device wafer. Bottom surface nonflatness can interfere with securely holding the mask in the patterning and exposure tools as well as exacerbating patterned surface nonflatness. Of great concern is the effect of the mounting technique employed in the patterning and exposure tools on mask flatness. One such design, the electrostatic pin chuck, consists of a 'bed of pins' on the top surface of the chuck that will support the EUV mask during patterning and exposure. The pin design has been proposed to minimize the likelihood of particulates becoming lodged between the mask and chuck that would adversely distort the mask. To ensure that a chuck of this design will minimize image placement errors while still securely holding the mask, three-dimensional finite element (FE) models have been created to predict the influence of the electrostatic pin chuck on mask flatness. Legendre polynomials were used as input to the models to represent experimentally-measured substrate bottom surface shapes. The FE results illustrate that mechanical modeling provides an invaluable tool for quantifying the influence of mounting techniques on mask flatness, and, ultimately optimizing system parameters to successfully meet the stringent requirements at the 45-nm node (and below).

  19. Masked Inhibitory Priming in English: Evidence for Lexical Inhibition

    ERIC Educational Resources Information Center

    Davis, Colin J.; Lupker, Stephen J.

    2006-01-01

    Predictions derived from the interactive activation (IA) model were tested in 3 experiments using the masked priming technique in the lexical decision task. Experiment 1 showed a strong effect of prime lexicality: Classifications of target words were facilitated by orthographically related nonword primes (relative to unrelated nonword primes) but…

  20. Evidence for Early Morphological Decomposition: Combining Masked Priming with Magnetoencephalography

    ERIC Educational Resources Information Center

    Lehtonen, Minna; Monahan, Philip J.; Poeppel, David

    2011-01-01

    Are words stored as morphologically structured representations? If so, when during word recognition are morphological pieces accessed? Recent masked priming studies support models that assume early decomposition of (potentially) morphologically complex words. The electrophysiological evidence, however, is inconsistent. We combined masked…

  1. Mask blank particle inspection in vacuum environments

    NASA Astrophysics Data System (ADS)

    Sekine, Akihiko; Nagahama, Hiroyuki; Tojo, Toru; Akeno, Kiminobu; Hirano, Ryoichi

    2002-10-01

    The mask blank surface inspection system for the electron beam mask writing system (EB mask writer) has developed. This system, that has the small vacuum chamber attachable to EB mask writer, inspects a mask blank that is just before EB writing in vacuum environments. It can inspect whole area of the 230mm mask at 0.3micrometer sensitivity. It also can perform fast inspection by applying the original scanning algorithm for the laser beam. It has the wide detective range from 0.3 to 2.0 micrometers of particle size. It can distinguish sizes of particles in that range. The auto focus function is most important factor for maintaining the sensitivity.

  2. Polarization masks: concept and initial assessment

    NASA Astrophysics Data System (ADS)

    Lam, Michael; Neureuther, Andrew R.

    2002-07-01

    Polarization from photomasks can be used as a new lever to improve lithographic performance in both binary and phase-shifting masks (PSMs). While PSMs manipulate the phase of light to control the temporal addition of electric field vectors, polarization masks manipulate the vector direction of electric field vectors to control the spatial addition of electric field components. This paper explores the theoretical possibilities of polarization masks, showing that it is possible to use bar structures within openings on the mask itself to polarize incident radiation. Rigorous electromagnetic scattering simulations using TEMPEST and imaging with SPLAT are used to give an initial assessment on the functionality of polarization masks, discussing the polarization quality and throughputs achieved with the masks. Openings between 1/8 and 1/3 of a wavelength provide both a low polarization ratio and good transmission. A final overall throughput of 33% - 40% is achievable, corresponding to a dose hit of 2.5x - 3x.

  3. Polyurethane Masks Large Areas in Electroplating

    NASA Technical Reports Server (NTRS)

    Beasley, J. L.

    1985-01-01

    Polyurethane foam provides effective mask in electroplating of copper or nickel. Thin layer of Turco maskant painted on area to be masked: Layer ensures polyurethane foam removed easily after served its purpose. Component A, isocyanate, and component B, polyol, mixed together and brushed or sprayed on mask area. Mixture reacts, yielding polyurethane foam. Foam prevents deposition of nickel or copper on covered area. New method saves time, increases productivity and uses less material than older procedures.

  4. Mask lithography for display manufacturing

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Ekberg, P.

    2010-05-01

    The last ten years have seen flat displays conquer our briefcases, desktops, and living rooms. There has been an enormous development in production technology, not least in lithography and photomasks. Current masks for large displays are more than 2 m2 and make 4-6 1X prints on glass substrates that are 9 m2. One of the most challenging aspects of photomasks for displays is the so called mura, stripes or blemishes which cause visible defects in the finished display. For the future new and even tighter maskwriter specifications are driven by faster transistors and more complex pixel layouts made necessary by the market's wish for still better image quality, multi-touch panels, 3D TVs, and the next wave of e-book readers. Large OLED screens will pose new challenges. Many new types of displays will be lowcost and use simple lithography, but anything which can show video and high quality photographic images needs a transistor backplane and sophisticated masks for its production.

  5. VIIRS Cloud Mask Validation Exercises

    NASA Astrophysics Data System (ADS)

    Frey, R.; Heidinger, A. K.; Hutchison, K.; Dutcher, S.

    2011-12-01

    The NPP Satellite is scheduled for launch October 25, 2011. Included on the platform is the VIIRS (Visible/Infrared Imager/Suite) instrument which features 16 bands at about 0.75 m spatial resolution and 5 imager bands at roughly 0.375 m resolution. The basic VIIRS cloud mask (VCM) output is a flag that indicates one of four possible cloudy vs. clear conditions for each 0.75 m pixel: confident clear, probably clear, probably cloudy, and confident cloudy. Pre-launch assessment of the VCM algorithm has been performed with use of MODIS observations as proxy input. Several comparisons are shown between VCM results and cloud detection from other instruments and/or algorithms: MODIS cloud mask (MOD35) at the five-minute granule level (L2), global and regional monthly average cloud amounts from MODIS (MOD35) and MODIS-CERES, ISCCP, PATMOS-x (AVHRR), and CALIOP (lidar). In addition to overall results, collocated MODIS observations, CALIOP and VCM cloud determinations are used to evaluate VCM cloud test thresholds and other tunable parameters. The methods shown will be among those used during the Intensive Calibration and Validation period and beyond.

  6. Evaluation of a native vegetation masking technique

    NASA Technical Reports Server (NTRS)

    Kinsler, M. C.

    1984-01-01

    A crop masking technique based on Ashburn's vegetative index (AVI) was used to evaluate native vegetation as an indicator of crop moisture condition. A mask of the range areas (native vegetation) was generated for each of thirteen Great Plains LANDSAT MSS sample segments. These masks were compared to the digitized ground truth and accuracies were computed. An analysis of the types of errors indicates a consistency in errors among the segments. The mask represents a simple quick-look technique for evaluating vegetative cover.

  7. Serotonin dependent masking of hippocampal sharp wave ripples.

    PubMed

    ul Haq, Rizwan; Anderson, Marlene L; Hollnagel, Jan-Oliver; Worschech, Franziska; Sherkheli, Muhammad Azahr; Behrens, Christoph J; Heinemann, Uwe

    2016-02-01

    Sharp wave ripples (SPW-Rs) are thought to play an important role in memory consolidation. By rapid replay of previously stored information during slow wave sleep and consummatory behavior, they result from the formation of neural ensembles during a learning period. Serotonin (5-HT), suggested to be able to modify SPW-Rs, can affect many neurons simultaneously by volume transmission and alter network functions in an orchestrated fashion. In acute slices from dorsal hippocampus, SPW-Rs can be induced by repeated high frequency stimulation that induces long-lasting LTP. We used this model to study SPW-R appearance and modulation by 5-HT. Although stimulation in presence of 5-HT permitted LTP induction, SPW-Rs were "masked"--but appeared after 5-HT wash-out. This SPW-R masking was dose dependent with 100 nM 5-HT being sufficient--if the 5-HT re-uptake inhibitor citalopram was present. Fenfluramine, a serotonin releaser, could also mask SPW-Rs. Masking was due to 5-HT1A and 5-HT2A/C receptor activation. Neither membrane potential nor membrane conductance changes in pyramidal cells caused SPW-R blockade since both remained unaffected by combining 5-HT and citalopram. Moreover, 10 and 30 μM 5-HT mediated SPW-R masking preceded neuronal hyperpolarization and involved reduced presynaptic transmitter release. 5-HT, as well as a 5-HT1A agonist, augmented paired pulse facilitation and affected the coefficient of variance. Spontaneous SPW-Rs in mice hippocampal slices were also masked by 5-HT and fenfluramine. While neuronal ensembles can acquire long lasting LTP during higher 5-HT levels, lower 5-HT levels enable neural ensembles to replay previously stored information and thereby permit memory consolidation memory. PMID:26409781

  8. Determination of mask induced polarization effects on AltPSM mask structures

    NASA Astrophysics Data System (ADS)

    Hollein, Ingo; Teuber, Silvio; Bubke, Karsten

    2005-06-01

    In the process of discussion of possible mask-types for the 5x nm node (half-pitch) and below, the alternating phase-shifting mask (AltPSM) is a potential candidate to be screened. The current scenario suggests using 193 nm immersion lithography with NA values of up to 1.2 and above. New optical effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate need to be taken into account when the optical performance of a mask is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures on a real mask. Measurements of the polarization dependent diffraction efficiencies have been performed on AltPSM masks. Experimental results show good agreement with simulations. A comparison with Binary Masks is made.

  9. A cluster randomised trial of cloth masks compared with medical masks in healthcare workers

    PubMed Central

    MacIntyre, C Raina; Seale, Holly; Dung, Tham Chi; Hien, Nguyen Tran; Nga, Phan Thi; Chughtai, Abrar Ahmad; Rahman, Bayzidur; Dwyer, Dominic E; Wang, Quanyi

    2015-01-01

    Objective The aim of this study was to compare the efficacy of cloth masks to medical masks in hospital healthcare workers (HCWs). The null hypothesis is that there is no difference between medical masks and cloth masks. Setting 14 secondary-level/tertiary-level hospitals in Hanoi, Vietnam. Participants 1607 hospital HCWs aged ≥18 years working full-time in selected high-risk wards. Intervention Hospital wards were randomised to: medical masks, cloth masks or a control group (usual practice, which included mask wearing). Participants used the mask on every shift for 4 consecutive weeks. Main outcome measure Clinical respiratory illness (CRI), influenza-like illness (ILI) and laboratory-confirmed respiratory virus infection. Results The rates of all infection outcomes were highest in the cloth mask arm, with the rate of ILI statistically significantly higher in the cloth mask arm (relative risk (RR)=13.00, 95% CI 1.69 to 100.07) compared with the medical mask arm. Cloth masks also had significantly higher rates of ILI compared with the control arm. An analysis by mask use showed ILI (RR=6.64, 95% CI 1.45 to 28.65) and laboratory-confirmed virus (RR=1.72, 95% CI 1.01 to 2.94) were significantly higher in the cloth masks group compared with the medical masks group. Penetration of cloth masks by particles was almost 97% and medical masks 44%. Conclusions This study is the first RCT of cloth masks, and the results caution against the use of cloth masks. This is an important finding to inform occupational health and safety. Moisture retention, reuse of cloth masks and poor filtration may result in increased risk of infection. Further research is needed to inform the widespread use of cloth masks globally. However, as a precautionary measure, cloth masks should not be recommended for HCWs, particularly in high-risk situations, and guidelines need to be updated. Trial registration number Australian New Zealand Clinical Trials Registry: ACTRN12610000887077. PMID

  10. Set Size and Mask Duration Do Not Interact in Object-Substitution Masking

    ERIC Educational Resources Information Center

    Argyropoulos, Ioannis; Gellatly, Angus; Pilling, Michael; Carter, Wakefield

    2013-01-01

    Object-substitution masking (OSM) occurs when a mask, such as four dots that surround a brief target item, onsets simultaneously with the target and offsets a short time after the target, rather than simultaneously with it. OSM is a reduction in accuracy of reporting the target with the temporally trailing mask, compared with the simultaneously…

  11. Mask CD uniformity improvement by electron scanning exposure based Global Loading Effect Correction

    NASA Astrophysics Data System (ADS)

    Li, Rivan; Tian, Eric; Shi, Irene; Guo, Eric; Lu, Max

    2015-07-01

    Critical Dimension (CD) Uniformity is one of the necessary parameters to assure good performance and reliable functionality of any integrated circuit (IC), and towards the advanced technology node 28nm and beyond, corresponding CD Uniformity becomes more and more crucial. It is found that bad mask CD Uniformity is a significant error source at 28nm process. The CD Uniformity on mask, if not controlled well, will badly impact wafer CD performance, and it has been well-studied that CD Uniformity issue from gate line-width in transistors would affect the device performance directly. In this paper we present a novel solution for mask global CD uniformity error correction, which is called as global loading effect correction (GLEC) method and applied nesting in the mask exposure map during the electron beam exposure. There are factors such as global chip layout, writing sequence and chip pattern density distribution (Global Loading), that work on the whole mask CD Uniformity, especially Global Loading is the key factor related to mask global CD error. From our experimental results, different pattern density distribution on mask significantly influenced the final mask CD Uniformity: the mask with undulating pattern density distribution provides much worse CD Uniformity than that with uniform one. Therefore, a GLEC model based on pattern density has been created to compensate the global error during the electron beam exposure, which has been proved to be efficacious to improve mask global CD Uniformity performance. Furthermore, it 's also revealed that pattern type is another important impact factor, and GLEC coefficient need be modified due to the specific pattern type (e.g. dense line-space only, iso-space only or an average of them) to improve the corresponding mask CD uniformity.

  12. Shadows Alter Facial Expressions of Noh Masks

    PubMed Central

    Kawai, Nobuyuki; Miyata, Hiromitsu; Nishimura, Ritsuko; Okanoya, Kazuo

    2013-01-01

    Background A Noh mask, worn by expert actors during performance on the Japanese traditional Noh drama, conveys various emotional expressions despite its fixed physical properties. How does the mask change its expressions? Shadows change subtly during the actual Noh drama, which plays a key role in creating elusive artistic enchantment. We here describe evidence from two experiments regarding how attached shadows of the Noh masks influence the observers’ recognition of the emotional expressions. Methodology/Principal Findings In Experiment 1, neutral-faced Noh masks having the attached shadows of the happy/sad masks were recognized as bearing happy/sad expressions, respectively. This was true for all four types of masks each of which represented a character differing in sex and age, even though the original characteristics of the masks also greatly influenced the evaluation of emotions. Experiment 2 further revealed that frontal Noh mask images having shadows of upward/downward tilted masks were evaluated as sad/happy, respectively. This was consistent with outcomes from preceding studies using actually tilted Noh mask images. Conclusions/Significance Results from the two experiments concur that purely manipulating attached shadows of the different types of Noh masks significantly alters the emotion recognition. These findings go in line with the mysterious facial expressions observed in Western paintings, such as the elusive qualities of Mona Lisa’s smile. They also agree with the aesthetic principle of Japanese traditional art “yugen (profound grace and subtlety)”, which highly appreciates subtle emotional expressions in the darkness. PMID:23940748

  13. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  14. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 42 Public Health 1 2011-10-01 2011-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  15. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  16. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 1 2014-10-01 2014-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  17. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas mask containers; minimum requirements. 84.117... § 84.117 Gas mask containers; minimum requirements. (a) Gas masks shall be equipped with a substantial... mask it contains and all appropriate approval labels. (b) Containers for gas masks shall be...

  18. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas masks; description. 84.110 Section 84.110... HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.110 Gas masks; description. (a) Gas masks including all completely assembled air purifying masks designed...

  19. 42 CFR 84.110 - Gas masks; description.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas masks; description. 84.110 Section 84.110... HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.110 Gas masks; description. (a) Gas masks including all completely assembled air purifying masks designed...

  20. The attentional blink is not affected by backward masking of T2, T2-mask SOA, or level of T2 impoverishment.

    PubMed

    Jannati, Ali; Spalek, Thomas M; Lagroix, Hayley E P; Di Lollo, Vincent

    2012-02-01

    Identification of the second of two targets (T2) is impaired when presented shortly after the first (T1). This attentional blink (AB) is thought to arise from a delay in T2 processing during which T2 is vulnerable to masking. Conventional studies have measured T2 accuracy which is constrained by the 100% ceiling. We avoided this problem by using a dynamic threshold-tracking procedure that is inherently free from ceiling constraints. In two experiments we examined how AB magnitude is affected by three masking-related factors: (a) presence/absence of T2 mask, (b) T2-mask stimulus onset asynchrony (SOA), and (c) level of T2 impoverishment (signal-to-noise ratio [SNR]). In Experiment 1, overall accuracy decreased with T2-mask SOA. The magnitude of the AB, however, was invariant with SOA and with mask presence/absence. Experiment 2 further showed that the AB was invariant with T2 SNR. The relationship among mask presence/absence, SOA, and T2 SNR and the AB is encompassed in a qualitative model. PMID:22060143

  1. A novel 3D constellation-masked method for physical security in hierarchical OFDMA system.

    PubMed

    Zhang, Lijia; Liu, Bo; Xin, Xiangjun; Liu, Deming

    2013-07-01

    This paper proposes a novel 3D constellation-masked method to ensure the physical security in hierarchical optical orthogonal frequency division multiplexing access (OFDMA) system. The 3D constellation masking is executed on the two levels of hierarchical modulation and among different OFDM subcarriers, which is realized by the masking vectors. The Lorenz chaotic model is adopted for the generation of masking vectors in the proposed scheme. A 9.85 Gb/s encrypted hierarchical QAM OFDM signal is successfully demonstrated in the experiment. The performance of illegal optical network unit (ONU) with different masking vectors is also investigated. The proposed method is demonstrated to be secure and efficient against the commonly known attacks in the experiment. PMID:23842348

  2. Implicit Semantic Perception in Object Substitution Masking

    ERIC Educational Resources Information Center

    Goodhew, Stephanie C.; Visser, Troy A. W.; Lipp, Ottmar V.; Dux, Paul E.

    2011-01-01

    Decades of research on visual perception has uncovered many phenomena, such as binocular rivalry, backward masking, and the attentional blink, that reflect "failures of consciousness". Although stimuli do not reach awareness in these paradigms, there is evidence that they nevertheless undergo semantic processing. Object substitution masking (OSM),…

  3. 47 CFR 90.210 - Emission masks.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Emission masks. 90.210 Section 90.210 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES General Technical Standards § 90.210 Emission masks. Except as indicated elsewhere in this part, transmitters used in...

  4. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  5. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  6. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  7. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  8. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  9. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  10. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  11. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  12. 21 CFR 868.5590 - Scavenging mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Scavenging mask. 868.5590 Section 868.5590 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5590 Scavenging mask. (a) Identification....

  13. 21 CFR 868.5570 - Nonrebreathing mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Nonrebreathing mask. 868.5570 Section 868.5570 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5570 Nonrebreathing mask....

  14. GEWEX-RFA Land-Ocean Mask

    Atmospheric Science Data Center

    2016-05-20

    GEWEX RFA Land-Ocean Mask A 2.5° resolution land-ocean mask has been developed for the Radiative Flux Assessment. It can be used ... creating global, regional, or zonal time series for land or ocean. Format - Pixels are arranged as in global map standard . ...

  15. A facial mask comprising Dead Sea mud.

    PubMed

    Abu-Jdayil, Basim; Mohameed, Hazim A

    2006-01-01

    Many investigators have proved that Dead Sea salt and mud are useful in treating skin disorders and skin diseases. Therefore, the black mud has been extensively used as a base for the preparation of soaps, creams, and unguents for skin care. This study concerns a facial mask made mainly of Dead Sea mud. The effects of temperature and shearing conditions on the rheological behavior of the facial mask were investigated. The mud facial mask exhibited a shear thinning behavior with a yield stress. It was found that the apparent viscosity of the mask has a strong dependence on the shear rate as well as on the temperature. The facial mask exhibited a maximum yield stress and very shear thinning behavior at 40 degrees C, which is attributed to the gelatinization of the polysaccharide used to stabilize the mud particles. On the other hand, the mud mask exhibited a time-independent behavior at low temperatures and shear rates and changed to a thixotropic behavior upon increasing both the temperature and the shear rate. The shear thinning and thixotropic behaviors have a significant importance in the ability of the facial mask to spread on the skin: the Dead Sea mud mask can break down for easy spreading, and the applied film can gain viscosity instantaneously to resist running. Moreover, particle sedimentation, which in this case would negatively affect consumer acceptance of the product, occurs slowly due to high viscosity at rest conditions. PMID:17256074

  16. Masking the Feeling of Being Stupid.

    ERIC Educational Resources Information Center

    Smith, Sally L.

    1988-01-01

    Teaching experience at The Lab School of Washington has shown that learning-disabled children and adults cope with their lack of self-esteem and feelings of stupidity by developing masks to hide their hurt. These include masks of super-competence, helplessness, invisibility, clowning, injustice collecting, indifference, boredom, outrageousness,…

  17. Mask industry assessment trend analysis 2006

    NASA Astrophysics Data System (ADS)

    Shelden, Gilbert; Marmillion, Patricia

    2007-02-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by SEMI North America to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data was presented at BACUS and a detailed trend analysis is presented here. The annual survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers and industry equipment makers. This year's assessment is the fifth in the current series of annual reports. With continued industry support the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify trends in the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the 2005 survey. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns and Services, Operating Cost Factors, and Equipment Utilization. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. Note: the questions covering operating cost factors and equipment utilization were only added to the survey in 2005; therefore meaningful trend analysis is not yet available.

  18. Mask industry assessment trend analysis: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2010-05-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  19. Computing Challenges in Coded Mask Imaging

    NASA Technical Reports Server (NTRS)

    Skinner, Gerald

    2009-01-01

    This slide presaentation reviews the complications and challenges in developing computer systems for Coded Mask Imaging telescopes. The coded mask technique is used when there is no other way to create the telescope, (i.e., when there are wide fields of view, high energies for focusing or low energies for the Compton/Tracker Techniques and very good angular resolution.) The coded mask telescope is described, and the mask is reviewed. The coded Masks for the INTErnational Gamma-Ray Astrophysics Laboratory (INTEGRAL) instruments are shown, and a chart showing the types of position sensitive detectors used for the coded mask telescopes is also reviewed. Slides describe the mechanism of recovering an image from the masked pattern. The correlation with the mask pattern is described. The Matrix approach is reviewed, and other approaches to image reconstruction are described. Included in the presentation is a review of the Energetic X-ray Imaging Survey Telescope (EXIST) / High Energy Telescope (HET), with information about the mission, the operation of the telescope, comparison of the EXIST/HET with the SWIFT/BAT and details of the design of the EXIST/HET.

  20. Computational inspection applied to a mask inspection system with advanced aerial imaging capability

    NASA Astrophysics Data System (ADS)

    Pang, Linyong; Peng, Danping; He, Lin; Chen, Dongxue; Dam, Thuc; Tolani, Vikram; Tam, Aviram; Staud, Wolf

    2010-03-01

    At the most advanced technology nodes, such as 32nm and 22nm, aggressive OPC and Sub-Resolution Assist Features (SRAFs) are required. However, their use results in significantly increased mask complexity, challenging mask defect dispositioning more than ever. To address these challenges in mask inspection and defect dispositioning, new mask inspection technologies have been developed that not only provide high resolution masks imaged at the same wavelength as the scanner, but that also provide aerial images by using both: software simulation and hardware emulation. The original mask patterns stored by the optics of mask inspection systems can be recovered using a patented algorithm based on the Level Set Method. More accurate lithography simulation models can be used to further evaluate defects on simulated resist patterns using the recovered mask pattern in high resolution and aerial mode. An automated defect classification based on lithography significance and local CD changes is also developed to disposition tens of thousands of potential defects in minutes, so that inspection throughput is not impacted.

  1. Evaluation of the efficiency of medical masks and the creation of new medical masks.

    PubMed

    Huang, J T; Huang, V I

    2007-01-01

    The effectiveness of medical masks in preventing respiratory infection was investigated by testing bacterial leakage, filtration efficiency, respiratory resistance and oxygen concentration of the enclosed space. Polypropylene (PP) fibres were treated with dimethyldioctadecylammonium bromide to impart a positive electrical charge capable of attracting bacteria. The fluffed PP fibres were used to make a polypropylene mask and to edge standard surgical and N-95 respirators to prevent leakage. A PP napkin was created by melting and blowing PP. The PP edging seal dramatically reduced bacterial leakage of standard masks and was more effective than adhesive paper tape edging in reducing respiratory resistance. Bacterial or viral filtration efficiency was almost 100% for the PP mask and the PP napkin. The specially designed PP mask with a synthetic adhesive at the edge of the mask may be more effective than the standard surgical mask and the N-95 respirator. The PP napkin is an important tool in preventing the spread of pathogens. PMID:17542408

  2. Polarization-induced astigmatism caused by topographic masks

    NASA Astrophysics Data System (ADS)

    Ruoff, Johannes; Neumann, Jens Timo; Schmitt-Weaver, Emil; van Setten, Eelco; le Masson, Nicolas; Progler, Chris; Geh, Bernd

    2007-10-01

    With the continuous shrink of feature sizes the pitch of the mask comes closer to the wave length of light. It has been recognized that in this case polarization effects of the mask become much more pronounced and deviations in the diffraction efficiencies from the well-known Kirchhoff approach can no longer be neglected. It is not only the diffraction efficiencies that become polarization-dependent, also the phases of the diffracted orders tend to deviate from Kirchhoff theory when calculated rigorously. This also happens for large structures, where these phase deviations can mimic polarization dependent wave front aberrations, which in the case of polarized illumination can lead to non-negligible focus shifts that depend on the orientation and the features size themselves. This orientation dependence results in a polarization induced astigmatism offset, which can be of the same order of magnitude or even larger as polarization effects stemming from the lens itself. Hence, for correctly predicting polarization induced astigmatism offsets, one has to both consider lens and mask effects at the same time. In this paper we present a comprehensive study of polarized induced phase effects of topographic masks and develop a simple theoretical model that accurately describes the observed effects.

  3. Coronagraph-integrated wavefront sensing with a sparse aperture mask

    NASA Astrophysics Data System (ADS)

    Subedi, Hari; Zimmerman, Neil T.; Kasdin, N. Jeremy; Cavanagh, Kathleen; Riggs, A. J. Eldorado

    2015-07-01

    Stellar coronagraph performance is highly sensitive to optical aberrations. In order to effectively suppress starlight for exoplanet imaging applications, low-order wavefront aberrations entering a coronagraph, such as tip-tilt, defocus, and coma, must be determined and compensated. Previous authors have established the utility of pupil-plane masks (both nonredundant/sparse-aperture and generally asymmetric aperture masks) for wavefront sensing (WFS). Here, we show how a sparse aperture mask (SAM) can be integrated with a coronagraph to measure low-order differential phase aberrations. Starlight rejected by the coronagraph's focal plane stop is collimated to a relay pupil, where the mask forms an interference fringe pattern on a subsequent detector. Our numerical Fourier propagation models show that the information encoded in the fringe intensity distortions is sufficient to accurately discriminate and estimate Zernike phase modes extending from tip-tilt up to radial degree n=5, with amplitude up to λ/20 RMS. The SAM sensor can be integrated with both Lyot and shaped pupil coronagraphs at no detriment to the science beam quality. We characterize the reconstruction accuracy and the performance under low flux/short exposure time conditions, and place it in context of other coronagraph WFS schemes.

  4. Wearable Monitor Helps Spot 'Masked' High Blood Pressure

    MedlinePlus

    ... fullstory_158860.html Wearable Monitor Helps Spot 'Masked' High Blood Pressure Black people with undetected problem twice as likely ... doctors spot black people with "masked," or undetected, high blood pressure, a new study suggests. "Masked" high blood pressure ...

  5. Cheap Face Masks Little Help Against Air Pollutants

    MedlinePlus

    ... News) -- Inexpensive cloth masks offer little protection against air pollution, a new study suggests. Many people in Asia ... or washable cloth masks to protect against small air pollution particles. But tests on different types of masks ...

  6. Nasal mask ventilation is better than face mask ventilation in edentulous patients

    PubMed Central

    Kapoor, Mukul Chandra; Rana, Sandeep; Singh, Arvind Kumar; Vishal, Vindhya; Sikdar, Indranil

    2016-01-01

    Background and Aims: Face mask ventilation of the edentulous patient is often difficult as ineffective seating of the standard mask to the face prevents attainment of an adequate air seal. The efficacy of nasal ventilation in edentulous patients has been cited in case reports but has never been investigated. Material and Methods: Consecutive edentulous adult patients scheduled for surgery under general anesthesia with endotracheal intubation, during a 17-month period, were prospectively evaluated. After induction of anesthesia and administration of neuromuscular blocker, lungs were ventilated with a standard anatomical face mask of appropriate size, using a volume controlled anesthesia ventilator with tidal volume set at 10 ml/kg. In case of inadequate ventilation, the mask position was adjusted to achieve best-fit. Inspired and expired tidal volumes were measured. Thereafter, the face mask was replaced by a nasal mask and after achieving best-fit, the inspired and expired tidal volumes were recorded. The difference in expired tidal volumes and airway pressures at best-fit with the use of the two masks and number of patients with inadequate ventilation with use of the masks were statistically analyzed. Results: A total of 79 edentulous patients were recruited for the study. The difference in expiratory tidal volumes with the use of the two masks at best-fit was statistically significant (P = 0.0017). Despite the best-fit mask placement, adequacy of ventilation could not be achieved in 24.1% patients during face mask ventilation, and 12.7% patients during nasal mask ventilation and the difference was statistically significant. Conclusion: Nasal mask ventilation is more efficient than standard face mask ventilation in edentulous patients. PMID:27625477

  7. Masking property of quantum random cipher with phase mask encryption

    NASA Astrophysics Data System (ADS)

    Sohma, Masaki; Hirota, Osamu

    2014-10-01

    The security analysis of physical encryption protocol based on coherent pulse position modulation (CPPM) originated by Yuen is one of the most interesting topics in the study of cryptosystem with a security level beyond the Shannon limit. Although the implementation of CPPM scheme has certain difficulty, several methods have been proposed recently. This paper deals with the CPPM encryption in terms of symplectic transformation, which includes a phase mask encryption as a special example, and formulates a unified security analysis for such encryption schemes. Specifically, we give a lower bound of Eve's symbol error probability using reliability function theory to ensure that our proposed system exceeds the Shannon limit. Then we assume the secret key is given to Eve after her heterodyne measurement. Since this assumption means that Eve has a great advantage in the sense of the conventional cryptography, the lower bound of her error indeed ensures the security level beyond the Shannon limit. In addition, we show some numerical examples of the security performance.

  8. Lithographic plane review (LPR) for sub-32nm mask defect disposition

    NASA Astrophysics Data System (ADS)

    Tolani, Vikram; Peng, Danping; He, Lin; Hwa, George; Chang, Hsien-Min; Dai, Grace; Corcoran, Noel; Dam, Thuc; Pang, Linyong; Tuo, Laurent C.; Chen, C. J.; Lai, Rick

    2010-09-01

    As optical lithography continues to extend into low-k1 regime, resolution of mask patterns under mask inspection optical conditions continues to diminish. Furthermore, as mask complexity and MEEF has also increased, it requires detecting even smaller defects in the already narrower pitch mask patterns. This leaves the mask inspection engineer with the option to either purchase a higher resolution mask inspection tool or increase the detector sensitivity on the existing inspection system or maybe even both. In order to meet defect sensitivity requirements in critical features of sub-32nm node designs, increasing sensitivity typically results in increased nuisance (i.e., small sub-specification) defect detection by 5-20X defects making post-inspection defect review non-manufacturable. As a solution for automatically dispositioning the increased number of nuisance and real defects detected at higher inspection sensitivity, Luminescent has successfully extended Inverse Lithography Technology (ILT) and its patented level-set methods to reconstruct the defective mask from its inspection image, and then perform simulated AIMS dispositioning on the reconstructed mask. In this technique, named Lithographic Plane Review (LPR), inspection transmitted and reflected light images of the test (i.e. defect) and reference (i.e., corresponding defect-free) regions are provided to the "inversion" engine which then computes the corresponding test and reference mask patterns. An essential input to this engine is a well calibrated model incorporating inspection tool optics, mask processing and 3D effects, and also the subsequent AIMS tool optics to be able to then simulate the aerial image impact of the defects. This flow is equivalent to doing an actual AIMS tool measurement of every defect detected during mask inspection, while at the same time maintaining inspection at high enough resolution. What makes this product usable in mask volume production is the high degree of accuracy of

  9. Global image placement of LEEPL mask

    NASA Astrophysics Data System (ADS)

    Eguchi, Hideyuki; Susa, Takashi; Sumida, Tomoya; Kurosu, Toshiaki; Yoshii, Takashi; Yotsui, Kenta; Sugimura, Hiroshi; Itoh, Kojiro; Tamura, Akira

    2004-12-01

    Two types of strut-supported low energy electron-beam proximity projection lithography (LEEPL) masks which are grid-type mask and COSMOS-type mask, were investigated for Global image placement (IP). First, we evaluated the dynamic repeatability measurement performance for global IP, measuring a same mask 10 times on a 46 x 46 mm pattern area by using LEEPL electrostatic chuck (ESC). The measurement repeatability for grid type and COSMOS type were 5.1/7.8 nm and 4.4/5.8 nm in x/y directions respectively. And then global in-plane distortion (IPD) of COSMOS type masks with various stress and flatness were measured. The global IPD of a COSMOS-type mask with a low stress of 10 MPa and a flatness of 3.1 μm was 6.5/6.4 nm in x/y directions, which is negligible assuming the measurement repeatability. Finally the global IPs of the two-type masks were measured. The global IPs for the grid-type and COSMOS-type were 24.5/15.7 nm and 23.2/16.4 nm in x/y directions respectively. Thus we confirmed that the global IP obtained meet the required value of less than 30 nm.

  10. LCD masks for spatial augmented reality

    NASA Astrophysics Data System (ADS)

    Smithwick, Quinn Y. J.; Reetz, Daniel; Smoot, Lanny

    2014-03-01

    One aim of Spatial Augmented Reality is to visually integrate synthetic objects into real-world spaces amongst physical objects, viewable by many observers without 3D glasses, head-mounted displays or mobile screens. In common implementations, using beam-combiners, scrim projection, or transparent self-emissive displays, the synthetic object's and real-world scene's light combine additively. As a result, synthetic objects appear low-contrast and semitransparent against well-lit backgrounds, and do not cast shadows. These limitations prevent synthetic objects from appearing solid and visually integrated into the real-world space. We use a transparent LCD panel as a programmable dynamic mask. The LCD panel displaying the synthetic object's silhouette mask is colocated with the object's color image, both staying aligned for all points-of-view. The mask blocks the background providing occlusion, presents a black level for high-contrast images, blocks scene illumination thus casting true shadows, and prevents blow-by in projection scrim arrangements. We have several implementations of SAR with LCD masks: 1) beam-combiner with an LCD mask, 2) scrim projection with an LCD mask, and 3) transparent OLED display with an LCD mask. Large format (80" diagonal) and dual layer volumetric variations are also implemented.

  11. An interactive tool for gamut masking

    NASA Astrophysics Data System (ADS)

    Song, Ying; Lau, Cheryl; Süsstrunk, Sabine

    2014-02-01

    Artists often want to change the colors of an image to achieve a particular aesthetic goal. For example, they might limit colors to a warm or cool color scheme to create an image with a certain mood or feeling. Gamut masking is a technique that artists use to limit the set of colors they can paint with. They draw a mask over a color wheel and only use the hues within the mask. However, creating the color palette from the mask and applying the colors to the image requires skill. We propose an interactive tool for gamut masking that allows amateur artists to create an image with a desired mood or feeling. Our system extracts a 3D color gamut from the 2D user-drawn mask and maps the image to this gamut. The user can draw a different gamut mask or locally refine the image colors. Our voxel grid gamut representation allows us to represent gamuts of any shape, and our cluster-based image representation allows the user to change colors locally.

  12. The Sensitivity of Coded Mask Telescopes

    NASA Technical Reports Server (NTRS)

    Skinner, Gerald K.

    2008-01-01

    Simple formulae are often used to estimate the sensitivity of coded mask X-ray or gamma-ray telescopes, but t,hese are strictly only applicable if a number of basic assumptions are met. Complications arise, for example, if a grid structure is used to support the mask elements, if the detector spatial resolution is not good enough to completely resolve all the detail in the shadow of the mask or if any of a number of other simplifying conditions are not fulfilled. We derive more general expressions for the Poisson-noise-limited sensitivity of astronomical telescopes using the coded mask technique, noting explicitly in what circumstances they are applicable. The emphasis is on using nomenclature and techniques that result in simple and revealing results. Where no convenient expression is available a procedure is given which allows the calculation of the sensitivity. We consider certain aspects of the optimisation of the design of a coded mask telescope and show that when the detector spatial resolution and the mask to detector separation are fixed, the best source location accuracy is obtained when the mask elements are equal in size to the detector pixels.

  13. Mask industry assessment trend analysis: 2012

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2012-02-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year's assessment was the tenth in the current series of annual reports. This year's survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

  14. Electron beam EUV patterned mask inspection system

    NASA Astrophysics Data System (ADS)

    Yamada, Keizo; Kitayama, Yasunobu; Fiekowsky, Peter

    2011-11-01

    EUV lithography is expected to begin production in 2014. Production of successful EUV photomasks requires patterned mask inspection (PMI). The ultimate PMI tool is expected to utilize actinic (EUV) illumination. Development of such a tool is expected to require three years after funding. Current test EUV masks, such as 22 nm, can be inspected using 193 nm wavelength deep UV (DUV) inspection tools similar to those currently being used for DUV masks. The DUV inspection tools may be extended for the 16 nm node. However EUV production is expected to start with 11 nm node masks which cannot be inspected with proposed DUV inspection tools. Therefore E-beam inspection (EBI) is discussed as the interim PMI method. EBI has the advantage of high resolution and the disadvantages of low inspection speed and relative insensitivity to ML defects (in the multi-layer material). EBI inspection speed is limited by the pixel size, pixel capture rate and the number of electron columns. The pixel rate is limited by the detector time-resolution, the beam current, and the detection efficiency. Technical improvements in beam focus, secondary electron detection, and defect detection and analysis provide good performance for 22 nm node masks. We discuss the advances and show that performance can be extrapolated for 16 and 11 nm node patterned mask inspections. We present sensitivity and false-defect frequency results of using the Holon EBI tool on 22 nm test masks and a roadmap for extending its operation for use on 16 and 11 nm node masks for inspections requiring 2-5 hours per mask.

  15. Next-generation lithography mask inspection

    NASA Astrophysics Data System (ADS)

    Bareket, Noah; Biellak, Steve; Pettibone, Donald W.; Stokowski, Stanley E.

    2000-07-01

    KLA-Tencor and industry partners are collaborating on a project for developing early capabilities of inspecting NGL masks. The project, partially funded by NIST as part of the ATP program, is focusing on building a research tool that will provide experimental data for development of a production capable tool. Some of the key technical issues include contrast in transmission and reflection, defect sources and types, and maintaining mask cleanliness in the absence of pellicles. The masks need to be inspected at multiple process stages, starting with unpatterned substrates, and ending with the pattern inspection. System issues include defect sensitivity and inspection time, which need to be balanced.

  16. Actinic review of EUV masks

    NASA Astrophysics Data System (ADS)

    Feldmann, Heiko; Ruoff, Johannes; Harnisch, Wolfgang; Kaiser, Winfried

    2010-04-01

    Management of mask defects is a major challenge for the introduction of EUV for HVM production. Once a defect has been detected, its printing impact needs to be predicted. Potentially the defect requires some repair, the success of which needs to be proven. This defect review has to be done with an actinic inspection system that matches the imaging conditions of an EUV scanner. During recent years, several concepts for such an aerial image metrology system (AIMS™) have been proposed. However, until now no commercial solution exists for EUV. Today, advances in EUV optics technology allow envisioning a solution that has been discarded before as unrealistic. We present this concept and its technical cornerstones.While the power requirement for the EUV source is less demanding than for HVM lithography tools, radiance, floor space, and stability are the main criteria for source selection. The requirement to emulate several generations of EUV scanners demands a large flexibility for the ilumination and imaging systems. New critical specifications to the EUV mirrors in the projection microscope can be satisfied using our expertise from lithographic mirrors. In summary, an EUV AIMS™ meeting production requirements seems to be feasible.

  17. When Bad Masks Turn Good

    NASA Astrophysics Data System (ADS)

    Abraham, Roberto G.

    In keeping with the spirit of a meeting on ‘masks,' this talk presents two short stories on the theme of dust. In the first, dust plays the familiar role of the evil obscurer, the enemy to bedefeated by the cunning observer in order to allow a key future technology (adaptive optics) to be exploited fully by heroic astronomers. In the second story, dust itself emerges as the improbable hero, in the form of a circumstellar debris disks. I will present evidence of a puzzling near-infrared excess in the continuum of high-redshift galaxies and will argue that the seemingly improbable origin of this IR excess is a population of young circumstellar disks formed around high-mass stars in distant galaxies. Assuming circumstellar disks extend down to lower masses,as they do in our own Galaxy, the excess emission presents us with an exciting opportunity to measure the formation rate of planetary systems in distant galaxies at cosmic epochs before our own solar system formed.

  18. Masked PDAMNA Film On Glass

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Polydiacetylenes are a unique class of highly conjugated organic polymers that are of interest for both electronic and photonic applications. Photodeposition from solutions is a novel process superior to those grown by conventional techniques. Evidence of this is seen when the films are viewed under a microscope; they exhibit small particles of solid polymer which form in the bulk solution, get transported by convection to the surface of the growing film, and become embedded. Also convection tends to cause the film thickness to be less uniform, and may even affect the molecular orientation of the films. The thrust of the research is to investigate in detail, both in 1-g and low-g, the effects of convection (and lack thereof) on this novel and interesting reaction. In this example, a portion of the substrate was blocked from exposure to the UV light by the mask, which was placed on the opposite side of the glass disk as the film, clearly demonstrating that photodeposition occurs only where the substrate is irradiated directly.

  19. Evaluation of taste-masking effects of pharmaceutical sweeteners with an electronic tongue system.

    PubMed

    Choi, Du Hyung; Kim, Nam Ah; Nam, Tack Soo; Lee, Sangkil; Jeong, Seong Hoon

    2014-03-01

    Electronic tongue systems have been developed for taste measurement of bitter drug substances in accurate taste comparison to development palatable oral formulations. This study was to evaluate the taste masking effect of conventional pharmaceutical sweeteners such as neohesperidin dihydrochalcone, sucrose, sucralose and aspartame. The model drugs were acetaminophen, ibuprofen, tramadol hydrochloride, and sildenafil citrate (all at 20 mM). The degree of bitterness was measured by a multichannel taste sensor system (an electronic tongue). The data was collected by seven sensors and analyzed by a statistical method of principal components analysis (PCA). The effect of taste masking excipient was dependent on the type of model drug. Changing the concentration of taste masking excipients affected the sensitivity of taste masking effect according to the type of drug. As the excipient concentration increased, the effect of taste masking increased. Moreover, most of the sensors showed a concentration-dependent pattern of the taste-masking agents as higher concentration provided higher selectivity. This might indicate that the sensors can detect small concentration changes of a chemical in solution. These results suggest that the taste masking could be evaluated based on the data of the electronic tongue system and that the formulation development process could be performed in a more efficient way. PMID:23786206

  20. Auditory masking of speech in reverberant multi-talker environments.

    PubMed

    Weller, Tobias; Buchholz, Jörg M; Best, Virginia

    2016-03-01

    Auditory localization research needs to be performed in more realistic testing environments to better capture the real-world abilities of listeners and their hearing devices. However, there are significant challenges involved in controlling the audibility of relevant target signals in realistic environments. To understand the important aspects influencing target detection in more complex environments, a reverberant room with a multi-talker background was simulated and presented to the listener in a loudspeaker-based virtual sound environment. Masked thresholds of a short speech stimulus were measured adaptively for multiple target source locations in this scenario. It was found that both distance and azimuth of the target source have a strong influence on the masked threshold. Subsequently, a functional model was applied to analyze the factors influencing target detectability. The model is comprised of an auditory front-end that generates an internal representation of the stimuli in both ears, followed by a decision device combining d' information across time, frequency and both ears. The model predictions of the masked thresholds were overall in very good agreement with the experimental results. An analysis of the model processes showed that head shadow effects, signal spectrum, and reverberation have a strong impact on target audibility in the given scenario. PMID:27036267

  1. AIMS D2DB simulation for DUV and EUV mask inspection

    NASA Astrophysics Data System (ADS)

    Peng, Danping; Li, Ying; Satake, Masaki; Hu, Peter; Chen, Jerry; Hsu, S. C.; Lai, Rick; Lin, C. S.; Tuo, Laurent C. C.

    2012-02-01

    AIMS™ Die-to-Die (D2D) is widely used in checking the wafer printability of mask defects for DUV lithography. Two AIMS images, a reference and a defect image, are captured and compared with differences larger than certain tolerances identified as real defects. Since two AIMS images are needed, and since AIMS system time is precious, it is desirable to save image search and capture time by simulating reference images from the OPC mask pattern and AIMS optics. This approach is called Die-to-Database (D2DB). Another reason that D2DB is desirable is in single die mask, where the reference image from another die does not exist. This paper presents our approach to simulate AIMS optics and mask 3D effects. Unlike OPC model, whose major concern is predicting printed CD, AIMS D2DB model must produce simulated images that match measured images across the image field. This requires a careful modeling of all effects that impact the final image quality. We present a vector-diffraction theory that is based on solid theoretical foundations and a general formulation of mask model that are applicable to both rigorous Maxwell solver and empirical model that can capture the mask 3D-effects. We demonstrated the validity of our approach by comparing our simulated image with AIMS machine measured images. We also briefly discuss the necessary changes needed to model EUV optics. Simulation is particularly useful while the industry waits for an actinic EUV-AIMS tool.

  2. Investigation of EUV haze defect: molecular behaviors of mask cleaning chemicals on EUV mask surfaces

    NASA Astrophysics Data System (ADS)

    Choi, Jaehyuck; Novak, Steve; Kandel, Yudhishthir; Denbeaux, Greg; Lee, Han-shin; Ma, Andy; Goodwin, Frank

    2012-03-01

    Photo-induced defects (or haze defects) on 193nm optic masks (haze defects) have been a serious problem not only to reticle engineers working for mask manufacturing and handling but also to photo-lithography engineers. The most widely accepted explanation of the root causes of haze defects is the cleaning chemical residues remaining on the mask surface and unavoidable outgassed molecules that outgas from pellicle materials when exposed to 193nm radiation. These have been significant challenges for reticle cleaning engineers who need to use cleaning chemicals whose residues do not lead to progressive defect formation on the mask and to find improved materials to minimize pellicle outgassing. It is assumed that contamination generation on EUV masks would have a higher probability than on optic masks, primarily since EUV masks are not protected by a pellicle and amorphous carbon films can accumulate during exposure to EUV light. While there is potential to mitigate the generation of carbon contamination by improving the exposure tool environment and removing carbon films using in-situ atomic hydrogen cleaning, it is not yet clear whether the reaction of mask cleaning chemicals to EUV radiation will lead to creation of progressive defects on EUV mask surfaces. With the work to being done it has been observed that carbon contamination on EUV masks dominates any effects of solvent chemicals under normal environmental or exposure conditions (from atmospheric pressure up to a vacuum level of 10-6 Torr) during EUV exposure. However, it is still unknown whether residual cleaning chemicals will provide a nucleus for progressive defect formation during exposure. This lack of understanding needs to be addressed by the industry as EUV masks are expected to undergo more frequent cleaning cycles. In this work, we will report on an investigation of the molecular behavior of cleaning chemicals on EUV mask surfaces during EUV exposure. Movement (e.g., migration or aggregation) of

  3. Mask effects on cosmological studies with weak-lensing peak statistics

    SciTech Connect

    Liu, Xiangkun; Pan, Chuzhong; Fan, Zuhui; Wang, Qiao

    2014-03-20

    With numerical simulations, we analyze in detail how the bad data removal, i.e., the mask effect, can influence the peak statistics of the weak-lensing convergence field reconstructed from the shear measurement of background galaxies. It is found that high peak fractions are systematically enhanced because of the presence of masks; the larger the masked area is, the higher the enhancement is. In the case where the total masked area is about 13% of the survey area, the fraction of peaks with signal-to-noise ratio ν ≥ 3 is ∼11% of the total number of peaks, compared with ∼7% of the mask-free case in our considered cosmological model. This can have significant effects on cosmological studies with weak-lensing convergence peak statistics, inducing a large bias in the parameter constraints if the effects are not taken into account properly. Even for a survey area of 9 deg{sup 2}, the bias in (Ω {sub m}, σ{sub 8}) is already intolerably large and close to 3σ. It is noted that most of the affected peaks are close to the masked regions. Therefore, excluding peaks in those regions in the peak statistics can reduce the bias effect but at the expense of losing usable survey areas. Further investigations find that the enhancement of the number of high peaks around the masked regions can be largely attributed to the smaller number of galaxies usable in the weak-lensing convergence reconstruction, leading to higher noise than that of the areas away from the masks. We thus develop a model in which we exclude only those very large masks with radius larger than 3' but keep all the other masked regions in peak counting statistics. For the remaining part, we treat the areas close to and away from the masked regions separately with different noise levels. It is shown that this two-noise-level model can account for the mask effect on peak statistics very well, and the bias in cosmological parameters is significantly reduced if this model is applied in the parameter fitting.

  4. Masking of aluminum surface against anodizing

    NASA Technical Reports Server (NTRS)

    Crawford, G. B.; Thompson, R. E.

    1969-01-01

    Masking material and a thickening agent preserve limited unanodized areas when aluminum surfaces are anodized with chromic acid. For protection of large areas it combines well with a certain self-adhesive plastic tape.

  5. Fabrication of defect-free full-field pixelated phase mask

    NASA Astrophysics Data System (ADS)

    Cheng, Wen-Hao; Farnsworth, Jeff; Kwok, Wai; Jamieson, Andrew; Wilcox, Nathan; Vernon, Matt; Yung, Karmen; Liu, Yi-Ping; Kim, Jun; Frendberg, Eric; Chegwidden, Scott; Schenker, Richard; Borodovsky, Yan

    2008-03-01

    Pixelated phase masks rendered from computational lithography techniques demand one generation-ahead mask technology development. In this paper, we reveal the accomplishment of fabricating Cr-less, full field, defect-free pixilated phase masks, including integration of tapeout, front-end patterning and backend defect inspection, repair, disposition and clean. This work was part of a comprehensive program within Intel which demonstrated microprocessor device yield. To pattern mask pixels with lateral sizes <100nm and vertical depth of 170nm, tapeout data management, ebeam write time management, aggressive pattern resolution scaling, etch improvement, new tool insertion and process integration were co-optimized to ensure good linearity of lateral, vertical dimensions and sidewall angle of glass pixels of arbitrary pixelated layout, including singlets, doublets, triplets, touch-corners and larger scale features of structural tones including pit/trench and pillar/mesa. The final residual systematic mask patterning imperfections were corrected and integrated upstream in the optical model and design layout. The volume of 100nm phase pixels on a full field reticle is on the order tera-scale magnitude. Multiple breakthroughs in backend mask technology were required to achieve a defect free full field mask. Specifically, integration of aerial image-based defect inspection, 3D optical model-based high resolution ebeam repair and disposition were introduced. Significant reduction of pixel mask specific defect modes, such as electro static discharge and glass pattern collapse, were executed to drive defect level down to single digit before attempt of repair. The defect printability and repair yield were verified downstream through silicon wafer print test to validate defect free mask performance.

  6. Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications

    SciTech Connect

    Naulleau, P. P.; George, Simi A.

    2009-02-13

    Line-edge roughness (LER) and the related effect of contact size variation remain as significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can indeed be an important contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam (see Fig. 1). The latter effect is especially important as higher coherence off-axis illumination conditions are used and defocus is considered. Here we describe these effect in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Figure 2 shows modeling results for 22-nm lines printed in a 0.32-numerical aperture system with 100-nm defocus assuming a mask with 0.24-nm rms multilayer roughness and no absorber edge roughness (unlike the example in Fig. 1). The impact of the phase roughness on the printed line-edge roughness is clearly evident and demonstrates the basic problem with mask roughness. The more detailed modeling-based analysis to be presented will account for performance throughout the process window as well as non-stochastic resist effects. We note that the mean-field resist effect is important to consider because, in practice, the resist is the limiting resolution element in the system and therefore dominates the mask-error enhancement factor (MEEF). As is typically the case with projection-optic-induced MEEF, the resist-induced MEEF will lead to even tighter mask requirements. Note that we do not consider resist stochastic effects since the purpose of this study is isolate mask-induced sources of image-plane roughness.

  7. Noble approach for mask-wafer measurement by design-based metrology integration system

    NASA Astrophysics Data System (ADS)

    Mito, Hiroaki; Hayano, Katsuya; Maeda, Tatsuya; Mohri, Hiroshi; Sato, Hidetoshi; Matsuoka, Ryoichi; Sukegawa, Shigeki

    2009-10-01

    OPC technique is getting more complicated toward 32nm and below technology node, i.e. from moderate OPC to aggressive OPC. Also, various types of phase shift mask have been introduced, and then the manufacturing process of them is complicated now. In order to shorten TAT (Turn around time) time, mask technique need be considered in addition to lithography technique. Furthermore, the lens aberration of the exposure system is getting smaller, so the current performance of it is very close to the ideal. On the other hand, when down sizing goes down to 32nm technology node, it starts to be reported that there are cases that size cannot be matched between a mask pattern and the corresponding printed pattern. Therefore, it is very indispensable to understand the pattern sizes correlation between a mask and the corresponding printed wafer in order to improve the accuracy and the quality, in the situation that the device size is so small that low k1 lithography had been developed and widely used in a production. Then it is thought that it is one of the approaches to improve an estimated accuracy of lithography by using contour that was extracted from mask SEM image in addition to mask model. This paper describes a newly developed integration system in order to solve issues above, and the applications. This is a system which integrates CG4500; CD-SEM for mask and CG4000; CD SEM for wafer; using DesignGauge; OPC evaluation system by Hitachi High-Technologies. It was investigated that a measurement accuracy improvement by executing a mask-wafer same point measurement with same measurement algorithm utilizing the new system. At first, we measured patterns described on a mask and verified the validity based on a measurement value, picture, measurement parameter and the coordinate. Then create a job file for a wafer CD-SEM using the system so as to measure the same patterns that were exposed using the mask. In addition, average CD measurement was tried in order to improve the

  8. New approach for mask-wafer measurement by design-based metrology integration system

    NASA Astrophysics Data System (ADS)

    Maeda, Tatsuya; Hayano, Katsuya; Kawashima, Satoshi; Mohri, Hiroshi; Sakai, Hideo; Sato, Hiodetoshi; Matsuoka, Ryoichi; Nishihara, Makoto; Sukegawa, Shigeki

    2009-03-01

    OPC (Optical Proximity Correction) technique is getting more complicated towards 32 nm technology node and beyond, i.e. from moderate OPC to aggressive OPC. Also, various types of phase shift mask have been introduced, and their manufacturing process is complicated. In order to shorten TAT (Turn around time), mask design technique needs be considered in addition to lithography technique. Furthermore, the lens aberration of the exposure system is getting smaller, so its current performance is very close to the ideal. On the other hand, when down sizing of device feature size reaches the 32nm technology node, cases begin to be reported where the feature dimension is not matched between a mask pattern and the corresponding printed pattern. Therefore, it is indispensable to understand the pattern size correlation between a mask and the corresponding printed wafer in order to improve the processing accuracy and the quality in the situation where the device size is so small that the low k1 lithography is widely used in production. One of the approaches to improve the estimated accuracy of lithography is the use of contour data extracted from mask SEM image in addition to the application of a mask model. This paper describes a newly developed integration system that aims to solve the issues above, and its applications. This is a system that integrates mask CD-SEM (Critical Dimension-Scanning Electron Microscope) CG4500, wafer CD-SEM CG4000, OPC evaluation system DesignGauge, all manufactured by Hitachi High-Technologies. The measurement accuracy improvement was examined by executing a mask-wafer same point measurement, i.e. measurement of the corresponding points, with same measurement algorithm utilizing the new system. First, we measured mask patterns and verified the validity based on the measurement value, the image, the measurement parameter and the coordinates. Then a job file was formulated for a wafer CD-SEM using the new system so as to measure the corresponding

  9. Inspection of lithographic mask blanks for defects

    DOEpatents

    Sommargren, Gary E.

    2001-01-01

    A visible light method for detecting sub-100 nm size defects on mask blanks used for lithography. By using optical heterodyne techniques, detection of the scattered light can be significantly enhanced as compared to standard intensity detection methods. The invention is useful in the inspection of super-polished surfaces for isolated surface defects or particulate contamination and in the inspection of lithographic mask or reticle blanks for surface defects or bulk defects or for surface particulate contamination.

  10. Thorough characterization of a EUV mask

    SciTech Connect

    Mizuno, H.; McIntyre, G.; Koay, C.-W.; Burkhardt, M.; He, L.; Hartley, J.; Johnson, C.; Raghunathan, S.; Goldberg, K.; Mochi, I.; La Fontaine, B.; Wood, O.

    2009-06-25

    We reported that we were successful in our 45nm technology node device demonstration in February 2008 and 22nm node technology node device patterning in February 2009 using ASML's Alpha Demo Tool (ADT). In order to insert extreme ultraviolet (EUV) lithography at the 15nm technology node and beyond, we have thoroughly characterized one EUV mask, a so-called NOVACD mask. In this paper, we report on three topics, The first topic is an analysis of line edge roughness (LER) using a mask Scanning Electron Microscope (SEM), an Atomic Force Microscope (AFM) and the Actinic Inspection Tool (AIT) to compare resist images printed with the ASML ADT. The results of the analysis show a good correlation between the mask AFM and the mask SEM measurements, However, the resist printing results for the isolated space patterns are slightly different. The cause ofthis discrepancy may be resist blur, image log slope and SEM image quality and so on. The second topic is an analysis of mask topography using an AFM and relative reflectivity of mirror and absorber surface using the AIT, The AFM data show 6 and 7 angstrom rms roughness for mirror and absorber, respectively. The reflectivity measurements show that the mirror reflects EUV light about 20 times higher than absorber. The last topic is an analysis of a 32nm technology node SRAM cell which includes a comparison of mask SEM image, AIT image, resist image and simulation results. The ADT images of the SRAM pattern were of high quality even though the mask patters were not corrected for OPC or any EUV-specific effects. Image simulation results were in good agreement with the printing results.

  11. VSP wave separation by adaptive masking filters

    NASA Astrophysics Data System (ADS)

    Rao, Ying; Wang, Yanghua

    2016-06-01

    In vertical seismic profiling (VSP) data processing, the first step might be to separate the down-going wavefield from the up-going wavefield. When using a masking filter for VSP wave separation, there are difficulties associated with two termination ends of the up-going waves. A critical challenge is how the masking filter can restore the energy tails, the edge effect associated with these terminations uniquely exist in VSP data. An effective strategy is to implement masking filters in both τ-p and f-k domain sequentially. Meanwhile it uses a median filter, producing a clean but smooth version of the down-going wavefield, used as a reference data set for designing the masking filter. The masking filter is implemented adaptively and iteratively, gradually restoring the energy tails cut-out by any surgical mute. While the τ-p and the f-k domain masking filters target different depth ranges of VSP, this combination strategy can accurately perform in wave separation from field VSP data.

  12. The effects of adaptation and masking on incremental thresholds for contrast.

    PubMed

    Ross, J; Speed, H D; Morgan, M J

    1993-10-01

    Using a temporal two-alternative forced-choice procedure, we measured thresholds for detecting increments in contrast of a 2 c/deg vertical grating at a wide range of pedestal contrasts, (1) before and after adapting to a grating of the same orientation and spatial frequency, and (2) in the presence of superimposed masks that varied in either orientation or spatial frequency. The adapting grating and all masks were of fixed 40% contrast. The results show that prior adaptation and concurrent masking have qualitatively similar effects on incremental thresholds; both raise threshold at low pedestal contrasts and leave them unaltered at higher contrasts. But masks have greater effects than adaptors, the effect of an orthogonal mask, or one two octaves higher in spatial frequency, being about the same as a parallel adaptor of the same spatial frequency as the pedestal grating. The results are explained by a model of Ross and Speed [(1991) Proceedings of the Royal Society of London B, 246, 61-69] that assumes that masks and adaptors both reposition the transducer function of contrast sensitive mechanisms and that masks, but not adaptors, also stimulate the detecting mechanism. PMID:8266646

  13. Accurate mask registration on tilted lines for 6F2 DRAM manufacturing

    NASA Astrophysics Data System (ADS)

    Roeth, K. D.; Choi, W.; Lee, Y.; Kim, S.; Yim, D.; Laske, F.; Ferber, M.; Daneshpanah, M.; Kwon, E.

    2015-10-01

    193nm immersion lithography is the mainstream production technology for the 22nm half pitch (HP) DRAM manufacturing. Considering multi-patterning as the technology to solve the very low k1 situation in the resolution equation puts extreme pressure on the intra-field overlay, to which mask registration error may be a significant error contributor [3]. The International Technology Roadmap for Semiconductors (ITRS [1]) requests a registration error below 4 nm for each mask of a multi-patterning set forming one layer on the wafer. For mask metrology at the 22nm HP node, maintaining a precision-to-tolerance (P/T) ratio below 0.25 will be very challenging. Mask registration error impacts intra-field wafer overlay directly and has a major impact on wafer yield. DRAM makers moved several years ago to 6F2 (figure 1, [2]) cell design and thus printing tilted lines at 15 or 30 degree. Overlay of contact layer over buried line has to be well controlled. However, measuring mask registration performance accurately on tilted lines was a challenge. KLA Tencor applied the model-based algorithm to enable the accurate registration measurement of tilted lines on the Poly layer as well as the mask-to-mask overlay to the adjacent contact layers. The metrology solution is discussed and measurement results are provided.

  14. Thrifty metabolic programming in rats is induced by both maternal undernutrition and postnatal leptin treatment, but masked in the presence of both: implications for models of developmental programming

    PubMed Central

    2014-01-01

    Background Maternal undernutrition leads to an increased risk of metabolic disorders in offspring including obesity and insulin resistance, thought to be due to a programmed thrifty phenotype which is inappropriate for a subsequent richer nutritional environment. In a rat model, both male and female offspring of undernourished mothers are programmed to become obese, however postnatal leptin treatment gives discordant results between males and females. Leptin treatment is able to rescue the adverse programming effects in the female offspring of undernourished mothers, but not in their male offspring. Additionally, in these rats, postnatal leptin treatment of offspring from normally-nourished mothers programmes their male offspring to develop obesity in later life, while there is no comparable effect in their female offspring. Results We show by microarray analysis of the female liver transcriptome that both maternal undernutrition and postnatal leptin treatment independently induce a similar thrifty transcriptional programme affecting carbohydrate metabolism, amino acid metabolism and oxidative stress genes. Paradoxically, however, the combination of both stimuli restores a more normal transcriptional environment. This demonstrates that “leptin reversal” is a global phenomenon affecting all genes involved in fetal programming by maternal undernourishment and leptin treatment. The thrifty transcriptional programme was associated with pro-inflammatory markers and downregulation of adaptive immune mediators, particularly MHC class I genes, suggesting a deficit in antigen presentation in these offspring. Conclusions We propose a revised model of developmental programming reconciling the male and female observations, in which there are two competing programmes which collectively drive liver transcription. The first element is a thrifty metabolic phenotype induced by early life growth restriction independently of leptin levels. The second is a homeostatic set point

  15. 21 CFR 868.5560 - Gas mask head strap.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Gas mask head strap. 868.5560 Section 868.5560...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5560 Gas mask head strap. (a) Identification. A gas mask head strap is a device used to hold an anesthetic gas mask in position on a...

  16. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ....111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its design... each gas mask shall meet the minimum construction requirements set forth in subpart G of this part. ... 42 Public Health 1 2011-10-01 2011-10-01 false Gas masks; required components. 84.111 Section...

  17. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2012-07-01 2012-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  18. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2013-07-01 2013-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  19. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  20. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2010-07-01 2010-07-01 false Mask work fees. 211.3 Section... PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask works. (b)...

  1. 37 CFR 211.3 - Mask work fees.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 37 Patents, Trademarks, and Copyrights 1 2014-07-01 2014-07-01 false Mask work fees. 211.3 Section... AND PROCEDURES MASK WORK PROTECTION § 211.3 Mask work fees. (a) Section 201.3 of this chapter prescribes the fees or charges established by the Register of Copyrights for services relating to mask...

  2. Ceramic Masks--A Multi-Cultural Experience

    ERIC Educational Resources Information Center

    Penn, Elizabeth E.

    1978-01-01

    The creation of ceramic masks in reaction to the film, Roots, focused on the functions of the masks themselves within a particular society, the materials and techniques used to create these masks, and the identification of typical shapes of heads and facial features on the masks in each culture. (Author/RK)

  3. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 42 Public Health 1 2013-10-01 2013-10-01 false Gas masks; required components. 84.111 Section 84... AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its...

  4. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 42 Public Health 1 2012-10-01 2012-10-01 false Gas masks; required components. 84.111 Section 84... AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its...

  5. Wide-band six-region phase mask coronagraph.

    PubMed

    Hou, Fanzhen; Cao, Qing; Zhu, Minning; Ma, Ourui

    2014-01-27

    An achromatic six-region phase mask coronagraph, used for the detection of exoplanets, is proposed. The mask has six regions in angular direction and could work in wideband. Furthermore, a six-level phase mask, as an example of the six-region phase mask, is theoretically investigated. According to numerical simulations, this specific mask has a deep elimination of starlight, good performance of achromatism and small inner working angle. As a single phase mask, the ratio of the remaining starlight of the six-level phase mask to the total incident starlight is less than 0.001 when the wavelength is between 500 nm and 600 nm. PMID:24515197

  6. Computational mask defect review for contamination and haze inspections

    NASA Astrophysics Data System (ADS)

    Morgan, Paul; Rost, Daniel; Price, Daniel; Corcoran, Noel; Satake, Masaki; Hu, Peter; Peng, Danping; Yonenaga, Dean; Tolani, Vikram; Wolf, Yulian; Shah, Pinkesh

    2013-09-01

    the mask manufacturing process. The latter characterization qualifies real defect signatures, such as pin-dots or pin-holes, extrusions or intrusions, assist-feature or dummy-fill defects, writeerrors or un-repairable defects, chrome-on-shifter or missing chrome-from-shifter defects, particles, etc., and also false defect signatures, such as those due to inspection tool registration or image alignment, interlace artifacts, CCD camera artifacts, optical shimmer, focus errors, etc. Such qualitative characterization of defects has enabled better inspection tool SPC and process defect control in the mask shop. In this paper, the same computational approach to defect review has been extended to contamination style defect inspections, including Die-to-Die reflected, and non Die-to-Die or single-die inspections. In addition to the computational methods used for transmitted aerial images, defects detected in die-to-die reflected light mode are analyzed based on special defect and background coloring in reflected-light, and other characteristics to determine the exact type and severity. For those detected in the non Die-to-Die mode, only defect images are available from the inspection tool. Without a reference, i.e., defect-free image, it is often difficult to determine the true nature or impact of the defect in question. Using a combination of inspection-tool modeling and image inversion techniques, Luminescent's LAIPHTM system generates an accurate reference image, and then proceeds with automated defect characterization as if the images were simply from a die-to-die inspection. The disposition of contamination style defects this way, filters out >90% of false and nuisance defects that otherwise would have been manually reviewed or measured on AIMSTM. Such computational defect review, unifying defect disposition across all available inspection modes, has been imperative to ensuring no yield losses due to errors in operator defect classification on one hand, and on the other

  7. Respiratory source control using a surgical mask: An in vitro study.

    PubMed

    Patel, Rajeev B; Skaria, Shaji D; Mansour, Mohamed M; Smaldone, Gerald C

    2016-07-01

    Cough etiquette and respiratory hygiene are forms of source control encouraged to prevent the spread of respiratory infection. The use of surgical masks as a means of source control has not been quantified in terms of reducing exposure to others. We designed an in vitro model using various facepieces to assess their contribution to exposure reduction when worn at the infectious source (Source) relative to facepieces worn for primary (Receiver) protection, and the factors that contribute to each. In a chamber with various airflows, radiolabeled aerosols were exhaled via a ventilated soft-face manikin head using tidal breathing and cough (Source). Another manikin, containing a filter, quantified recipient exposure (Receiver). The natural fit surgical mask, fitted (SecureFit) surgical mask and an N95-class filtering facepiece respirator (commonly known as an "N95 respirator") with and without a Vaseline-seal were tested. With cough, source control (mask or respirator on Source) was statistically superior to mask or unsealed respirator protection on the Receiver (Receiver protection) in all environments. To equal source control during coughing, the N95 respirator must be Vaseline-sealed. During tidal breathing, source control was comparable or superior to mask or respirator protection on the Receiver. Source control via surgical masks may be an important adjunct defense against the spread of respiratory infections. The fit of the mask or respirator, in combination with the airflow patterns in a given setting, are significant contributors to source control efficacy. Future clinical trials should include a surgical mask source control arm to assess the contribution of source control in overall protection against airborne infection. PMID:26225807

  8. OPC mask simplification using over-designed timing slack of standard cells

    NASA Astrophysics Data System (ADS)

    Qu, Yifan; Heng, Chun Huat; Tay, Arthur; Lee, Tong Heng

    2013-05-01

    It is well known that VLSI circuits must be designed to sustain the variations in process, voltage, temperature, etc. As a result, standard cell libraries (collections of the basic circuit components) are usually designed with large margin (also known as "timing slack"). However, in circuit manufacturing, only part of the margin will be utilized. The knowledge of the rest of the margin (over-designed timing slack), armed with models that link between timing domain and shape domain, can help to reduce the complexity of mask patterns and manufacturing cost. This paper proposed a novel methodology to simplify mask patterns in optical proximity correction (OPC) by using extra margin in timing (over-designed timing slack). This methodology can be applied after a conventional OPC, and is compatible with the current application-specific integrated circuit (ASIC) design flow. This iterative method is applied to each occurrence of over-designed timing slack. The actual value of timing slack can be estimated from post-OPC simulation. A timing cost function is developed in this work to map timing slack in timing domain to mask patterns in shape domain. This enables us to adjust mask patterns selectively based on the outcome of the cost function. All related mask patterns with over-designed timing slack will be annotated and simplified using our proposed mask simplification algorithm, which is in fact to merge the nearby edge fragments on the mask patterns. Simulations are conducted on a standard cell library and a full chip design to validate this proposed approach. When compared to existing OPC methods without mask simplification in the literature, our approach achieved a 51% reduction in mask fragment count, and this directly leads to a large saving in lithography manufacturing cost. The result also shows that timing closure is ensured, though part of the timing slack has been sacrificed.

  9. Respiratory source control using a surgical mask: An in vitro study

    PubMed Central

    Patel, Rajeev B.; Skaria, Shaji D.; Mansour, Mohamed M.; Smaldone, Gerald C.

    2016-01-01

    ABSTRACT Cough etiquette and respiratory hygiene are forms of source control encouraged to prevent the spread of respiratory infection. The use of surgical masks as a means of source control has not been quantified in terms of reducing exposure to others. We designed an in vitro model using various facepieces to assess their contribution to exposure reduction when worn at the infectious source (Source) relative to facepieces worn for primary (Receiver) protection, and the factors that contribute to each. In a chamber with various airflows, radiolabeled aerosols were exhaled via a ventilated soft-face manikin head using tidal breathing and cough (Source). Another manikin, containing a filter, quantified recipient exposure (Receiver). The natural fit surgical mask, fitted (SecureFit) surgical mask and an N95-class filtering facepiece respirator (commonly known as an “N95 respirator”) with and without a Vaseline-seal were tested. With cough, source control (mask or respirator on Source) was statistically superior to mask or unsealed respirator protection on the Receiver (Receiver protection) in all environments. To equal source control during coughing, the N95 respirator must be Vaseline-sealed. During tidal breathing, source control was comparable or superior to mask or respirator protection on the Receiver. Source control via surgical masks may be an important adjunct defense against the spread of respiratory infections. The fit of the mask or respirator, in combination with the airflow patterns in a given setting, are significant contributors to source control efficacy. Future clinical trials should include a surgical mask source control arm to assess the contribution of source control in overall protection against airborne infection. PMID:26225807

  10. Hidden data transmission using time delay for separating useful signals from masking oscillations

    NASA Astrophysics Data System (ADS)

    Kal'Yanov, Er. V.

    2009-03-01

    A new method of hidden data transmission based on the use of time delay for the separation of useful signals from masking noise-like (chaotic or stochastic) oscillations is described. Mathematical models involving a source of chaotic oscillations have been studied using numerical methods. The transmission of a masked non-encoded signal and the pulsed data transmission using 0/1 bit code are considered.

  11. Understanding the ion beam in EUV mask blank production

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick; Jindal, Vibhu; Weaver, Alfred; Teora, Pat; Sporre, John; Ruzic, David; Goodwin, Frank

    2012-03-01

    One of the major technical hurdles to be overcome before EUV lithography can enter high volume manufacturing is the amount of defects in EUV mask blanks, many of which occur during the EUV reflector deposition process. The technology currently used to deposit this reflector is ion beam sputter deposition. Understanding the properties of the ion beam and the nature of the plasma in the deposition chamber is therefore critical to understanding defect production mechanisms and subsequently eliminating them. In this work, we have studied how the source parameters influence ion beam divergence, its footprint on the target, and the amount of beam that misses the target and hits the shielding. By optimizing the source parameters, we can modulate certain target- and shield-specific defect types. We have compared our data with models of source performance and found general agreement, enabling the theory to be fine-tuned based on the results of the measurements. Models are being developed to better describe actual source performance. We have also investigated the plasma conditions the ion beam creates in the tool, which is crucial to understanding the transport of defects from their source to the mask. A well characterized ion beam and plasma will lead to process and tool changes that will ultimately reduce defect levels in EUV mask blanks.

  12. Infrared Signature Masking by Air Plasma Radiation

    NASA Technical Reports Server (NTRS)

    Kruger, Charles H.; Laux, C. O.

    2001-01-01

    This report summarizes the results obtained during a research program on the infrared radiation of air plasmas conducted in the High Temperature Gasdynamics Laboratory at Stanford University under the direction of Professor Charles H. Kruger, with Dr. Christophe O. Laux as Associate Investigator. The goal of this research was to investigate the masking of infrared signatures by the air plasma formed behind the bow shock of high velocity missiles. To this end, spectral measurements and modeling were made of the radiation emitted between 2.4 and 5.5 micrometers by an atmospheric pressure air plasma in chemical and thermal equilibrium at a temperature of approximately 3000 K. The objective was to examine the spectral emission of air species including nitric oxide, atomic oxygen and nitrogen lines, molecular and atomic continua, as well as secondary species such as water vapor or carbon dioxide. The cold air stream injected in the plasma torch contained approximately 330 parts per million of CO2, which is the natural CO2 concentration in atmospheric air at room temperatures, and a small amount of water vapor with an estimated mole fraction of 3.8x10(exp -4).

  13. ASTER nighttime cloud mask database using MODIS cloud mask (MOD35) products

    NASA Astrophysics Data System (ADS)

    Tonooka, Hideyuki

    2008-10-01

    Cloud assessment for ASTER nighttime scenes is not accurate because the ASTER Cloud Coverage Assessment Algorithm (ACCAA) thresholds with only one thermal infrared (TIR) band for nighttime scenes. First in the present paper, it is shown that the original ACCAA cloud masks differ considerably from the masks interpolated from MODIS Cloud Mask Products (MOD35), and this discrepancy is caused from errors in the ACCAA masks by visual check for 543 scenes. In addition, uncertain pixels included in MOD35 masks, which are classified to neither cloud nor clear, are visually checked for 76 scenes. Then, the ASTER nighttime cloud mask database using MOD35 products is introduced. It provides the interpolated MOD35 cloud masks for almost all ASTER nighttime scenes (143,242 scenes as of July 2008) through Internet. The database also shows that clear scenes with cloud coverage of 20% or less are about 34% of the total nighttime scenes. In the final part of the paper, an algorithm for reclassifying an interpolated MOD35 mask using ASTER measurements is proposed and applied to 42 test scenes. The algorithm will work well for some scenes, but less well for snow/ice surfaces, and thin, cirrus, and high clouds, due to the band limitation of ASTER/TIR. If a spatial uniformity test is added, the algorithm performance may be improved.

  14. The Intervenor Effect in Masked Priming: How Does Masked Priming Survive across an Intervening Word?

    ERIC Educational Resources Information Center

    Forster, Kenneth I.

    2009-01-01

    Four masked priming experiments are reported investigating the effect of inserting an unrelated word between the masked prime and the target. When the intervening word is visible, identity priming is reduced to the level of one-letter-different form priming, but form priming is largely unaffected. However, when the intervening word is itself…

  15. Mask automation: need a revolution in mask makers and equipment industry

    NASA Astrophysics Data System (ADS)

    Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

    2013-09-01

    As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

  16. High-radiance LDP source: clean, reliable, and stable EUV source for mask inspection

    NASA Astrophysics Data System (ADS)

    Teramoto, Yusuke; Santos, Bárbara; Mertens, Guido; Kops, Ralf; Kops, Margarete; von Wezyk, Alexander; Bergmann, Klaus; Yabuta, Hironobu; Nagano, Akihisa; Ashizawa, Noritaka; Taniguchi, Yuta; Shirai, Takahiro; Nakamura, Kiyotada; Aoki, Kazuya; Kasama, Kunihiko

    2016-03-01

    High-throughput and -resolution actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. To realize such inspection tools, a high-radiance EUV source is necessary. Ushio's laser-assisted discharge-produced plasma (LDP) source is able to meet industry's requirements in radiance, cleanliness, stability and reliability. Ushio's LDP source has shown the peak radiance at plasma of 180 W/mm2/sr and the area-averaged radiance in a 200-μm-diameter circle behind the debris mitigation system of 120 W/mm2/sr. A new version of the debris mitigation system is in testing phase. Its optical transmission was confirmed to be 73 %, which is 4 % lower than that of the previous version and therefore will be improved. Cleanliness of the system is evaluated by exposing Ru mirrors placed behind the debris mitigation system. Ru sputter rate was proven to be sufficiently low as 3~5 nm/Gpulse at 7 kHz, whereas frequency-dependent sputter rate was 1~3 nm/Gpulse at 5~9 kHz as previously reported. Sn deposition remained very low (< 0.05 nm) and did not grow over time. A new technique to suppress debris was tested and preliminary results were promising. Time-of-flight signal of fast ions was completely suppressed and Ru sputter rate of exposed mirrors at 3 kHz was approximately 1.3 nm/Gpulse, whereas the conventional mitigation system (new version) resulted in Ru sputter rate of 0.7 nm/Gpulse. This new technique also allows increasing the radiance efficiency by 30 %. Stability tests were done at several different discharge frequencies. Pulse energy stability was approximately 10 %. Dose energy stability dropped from approximately 2 % to 0.1 % when feedback control was activated. EUV emission position stability was studied at 3 kHz. Deviation of the plasma center of gravity was 6 μm, which is 3 % of plasma diameter and therefore considered to be negligible. Reliability tests were performed on both R and D and prototype machines and up to 200 hours of non

  17. AIMS mask qualification for 32nm node

    NASA Astrophysics Data System (ADS)

    Richter, Rigo; Thaler, Thomas; Seitz, Holger; Stroessner, Ulrich; Scheruebl, Thomas

    2009-10-01

    Moving forward to 32nm node and below optical lithography using 193nm is faced with complex requirements to be solved. Mask makers are forced to address both Double Patterning Techniques and Computational Lithography approaches such as Source Mask Optimizations and Inverse Lithography. Additionally, lithography at low k1 values increases the challenges for mask repair as well as for repair verification and review by AIMSTM. Higher CD repeatability, more flexibility in the illumination settings as well as significantly improved image performance must be added when developing the next generation mask qualification equipment. This paper reports latest measurement results verifying the appropriateness of the latest member of AIMSTM measurement tools - the AIMSTM 32-193i. We analyze CD repeatability measurements on lines and spaces pattern. The influence of the improved optical performance and newly introduced interferometer stage will be verified. This paper highlights both the new Double Patterning functionality emulating double patterning processes and the influence of its critical parameters such as overlay errors and resist impact. Beneficial advanced illumination schemes emulating scanner illumination document the AIMSTM 32-193i to meet mask maker community's requirements for the 32nm node.

  18. EUV mask process specifics and development challenges

    NASA Astrophysics Data System (ADS)

    Nesladek, Pavel

    2014-07-01

    EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed.

  19. Mask and lithography techniques for FPD

    NASA Astrophysics Data System (ADS)

    Sandstrom, T.; Wahlsten, M.; Sundelin, E.; Hansson, G.; Svensson, A.

    2015-09-01

    Large-field projection lithography for FPDs has developed gradually since the 90s. The LCD screen technology has remained largely unchanged and incremental development has given us better image quality, larger screen sizes, and above all lower cost per area. Recently new types of mobile devices with very high pixel density and/or OLED displays have given rise to dramatically higher requirem ents on photomask technology. Devices with 600 ppi or m ore need lithography with higher optical resolution and better linewidth control. OLED di splays pose new challenges with high sensitivity to transistor parameters and to capacitive cross-talk. New mask requirements leads to new maskwriter requirements and Mycronic has developed a new generation of large -area mask writers with significantly improved properties. This paper discusses and shows data for the improved writers. Mask production to high er quality stan dards also need metrology to verify the quality and Mycronic has introduced a 2D metrology tool with accuracy adequate for current and future masks. New printing or additive methods of producing disp lays on plastic or metal foil will make low-cost disp lays available. This inexpensive type of disp lays will exist side by side with the photographic quality displays of TVs and mobile devices, which will continue to be a challenge in terms of mask and production quality.

  20. Calculating aerial images from EUV masks

    NASA Astrophysics Data System (ADS)

    Pistor, Thomas V.; Neureuther, Andrew R.

    1999-06-01

    Aerial images for line/space patterns, arrays of posts and an arbitrary layout pattern are calculated for EUV masks in a 4X EUV imaging system. Both mask parameters and illumination parameters are varied to investigate their effects on the aerial image. To facilitate this study, a parallel version of TEMPEST with a Fourier transform boundary condition was developed and run on a network of 24 microprocessors. Line width variations are observed when absorber thickness or sidewall angle changes. As the line/space pattern scales to smaller dimensions, the aspect ratios of the absorber features increase, introducing geometric shadowing and reducing aerial image intensity and contrast. 100nm square posts have circular images of diameter close to 100nm, but decreasing in diameter significantly when the corner round radius at the mask becomes greater than 50 nm. Exterior mask posts image slightly smaller and with higher ellipticity than interior mask posts. The aerial image of the arbitrary test pattern gives insight into the effects of the off-axis incidence employed in EUV lithography systems.

  1. Sparse aperture mask for low order wavefront sensing

    NASA Astrophysics Data System (ADS)

    Subedi, Hari; Zimmerman, Neil T.; Kasdin, N. Jeremy; Cavanagh, Kathleen; Riggs, A. J. E.

    2015-09-01

    A high contrast is required for direct imaging of exoplanets. Ideally, the level of contrast required for direct imaging of exoplanets can be achieved by coronagraphic imaging, but in practice, the contrast is degraded by wavefront aberrations. To achieve the required contrast, low-order wavefront aberrations such as tip-tilt, defocus and coma must be determined and corrected. In this paper, we present a technique that integrates a sparse- aperture mask (SAM) with a shaped pupil coronagraph (SPC) to make precise estimates of these low-order aberrations. Starlight rejected by the coronagraph's focal plane stop is collimated to a relay pupil, where the mask forms an interference fringe pattern on a detector. Using numerical simulations, we show that the SAM can estimate rapidly varying tip-tilt errors in space telescopes arising from line-of-sight pointing oscillations as well as other higher-order modes. We also show that a Kalman filter can be used with the SAM to improve the estimation. At Princetons High Contrast Imaging Laboratory, we have recently created a testbed devoted to low-order wavefront sensing experiments. The testbed incorporates custom-fabricated masks (shaped pupil, focal plane, and sparse aperture) with a deformable mirror and a CCD camera to demonstrate the estimation and correction of low-order aberrations. Our first experiments aim to replicate the results of the SAM wavefront sensor (SAM WFS) Fourier propagation models.

  2. International Space Station (ISS) Emergency Mask (EM) Development

    NASA Technical Reports Server (NTRS)

    Toon, Katherine P.; Hahn, Jeffrey; Fowler, Michael; Young, Kevin

    2011-01-01

    The Emergency Mask (EM) is considered a secondary response emergency Personal Protective Equipment (PPE) designed to provide respiratory protection to the International Space Station (ISS) crewmembers in response to a post-fire event or ammonia leak. The EM is planned to be delivered to ISS in 2012 to replace the current air purifying respirator (APR) onboard ISS called the Ammonia Respirator (AR). The EM is a one ]size ]fits ]all model designed to fit any size crewmember, unlike the APR on ISS, and uses either two Fire Cartridges (FCs) or two Commercial Off-the-Shelf (COTS) 3M(Trademark). Ammonia Cartridges (ACs) to provide the crew with a minimum of 8 hours of respiratory protection with appropriate cartridge swap ]out. The EM is designed for a single exposure event, for either post ]fire or ammonia, and is a passive device that cannot help crewmembers who cannot breathe on their own. The EM fs primary and only seal is around the wearer fs neck to prevent a crewmember from inhaling contaminants. During the development of the ISS Emergency Mask, several design challenges were faced that focused around manufacturing a leak free mask. The description of those challenges are broadly discussed but focuses on one key design challenge area: bonding EPDM gasket material to Gore(Registered Trademark) fabric hood.

  3. Evaluating Texture Compression Masking Effects Using Objective Image Quality Assessment Metrics.

    PubMed

    Griffin, Wesley; Olano, Marc

    2015-08-01

    Texture compression is widely used in real-time rendering to reduce storage and bandwidth requirements. Recent research in compression algorithms has explored both reduced fixed bit rate and variable bit rate algorithms. The results are evaluated at the individual texture level using mean square error, peak signal-to-noise ratio, or visual image inspection. We argue this is the wrong evaluation approach. Compression artifacts in individual textures are likely visually masked in final rendered images and this masking is not accounted for when evaluating individual textures. This masking comes from both geometric mapping of textures onto models and the effects of combining different textures on the same model such as diffuse, gloss, and bump maps. We evaluate final rendered images using rigorous perceptual error metrics. Our method samples the space of viewpoints in a scene, renders the scene from each viewpoint using variations of compressed textures, and then compares each to a ground truth using uncompressed textures from the same viewpoint. We show that masking has a significant effect on final rendered image quality, masking effects and perceptual sensitivity to masking varies by the type of texture, graphics hardware compression algorithms are too conservative, and reduced bit rates are possible while maintaining final rendered image quality. PMID:26357259

  4. Counteracting Power Analysis Attacks by Masking

    NASA Astrophysics Data System (ADS)

    Oswald, Elisabeth; Mangard, Stefan

    The publication of power analysis attacks [12] has triggered a lot of research activities. On the one hand these activities have been dedicated toward the development of secure and efficient countermeasures. On the other hand also new and improved attacks have been developed. In fact, there has been a continuous arms race between designers of countermeasures and attackers. This chapter provides a brief overview of the state-of-the art in the arms race in the context of a countermeasure called masking. Masking is a popular countermeasure that has been extensively discussed in the scientific community. Numerous articles have been published that explain different types of masking and that analyze weaknesses of this countermeasure.

  5. Advanced mask aligner lithography: new illumination system.

    PubMed

    Voelkel, Reinhard; Vogler, Uwe; Bich, Andreas; Pernet, Pascal; Weible, Kenneth J; Hornung, Michael; Zoberbier, Ralph; Cullmann, Elmar; Stuerzebecher, Lorenz; Harzendorf, Torsten; Zeitner, Uwe D

    2010-09-27

    A new illumination system for mask aligner lithography is presented. The illumination system uses two subsequent microlens-based Köhler integrators. The second Köhler integrator is located in the Fourier plane of the first. The new illumination system uncouples the illumination light from the light source and provides excellent uniformity of the light irradiance and the angular spectrum. Spatial filtering allows to freely shape the angular spectrum to minimize diffraction effects in contact and proximity lithography. Telecentric illumination and ability to precisely control the illumination light allows to introduce resolution enhancement technologies (RET) like customized illumination, optical proximity correction (OPC) and source-mask optimization (SMO) in mask aligner lithography. PMID:20940992

  6. An ERP indicator of processing relevant gestalts in masked priming.

    PubMed

    Verleger, Rolf; Görgen, Stefani; Jaśkowski, Piotr

    2005-11-01

    Briefly presented arrows, made indistinguishable by masks that contain arrows, inversely prime responses to following visible arrows. This inverse effect might reflect general regularities of masked priming or be either due to the task-relevant elements of the mask or to special features of arrows. Here we report a slow negative EEG potential recorded from the scalp above the visual cortex, which is evoked by masks that contain arrows. Even being evoked when arrows masks were presented in isolation, this "Nd-mask" appeared to be an obligatory response. Yet Nd-mask was enhanced when primes and targets were arrows and was reduced in the other cases, and even reversed its polarity with appropriate control stimuli. These findings provide support both for the special status of arrows and for the notion of mask relevance. Nd-mask might be one instance of negative EEG potentials evoked by stimuli with familiar gestalts. PMID:16364063

  7. Communication masking in marine mammals: A review and research strategy.

    PubMed

    Erbe, Christine; Reichmuth, Colleen; Cunningham, Kane; Lucke, Klaus; Dooling, Robert

    2016-02-15

    Underwater noise, whether of natural or anthropogenic origin, has the ability to interfere with the way in which marine mammals receive acoustic signals (i.e., for communication, social interaction, foraging, navigation, etc.). This phenomenon, termed auditory masking, has been well studied in humans and terrestrial vertebrates (in particular birds), but less so in marine mammals. Anthropogenic underwater noise seems to be increasing in parts of the world's oceans and concerns about associated bioacoustic effects, including masking, are growing. In this article, we review our understanding of masking in marine mammals, summarise data on marine mammal hearing as they relate to masking (including audiograms, critical ratios, critical bandwidths, and auditory integration times), discuss masking release processes of receivers (including comodulation masking release and spatial release from masking) and anti-masking strategies of signalers (e.g. Lombard effect), and set a research framework for improved assessment of potential masking in marine mammals. PMID:26707982

  8. Masked fake face detection using radiance measurements.

    PubMed

    Kim, Youngshin; Na, Jaekeun; Yoon, Seongbeak; Yi, Juneho

    2009-04-01

    This research presents a novel 2D feature space where real faces and masked fake faces can be effectively discriminated. We exploit the reflectance disparity based on albedo between real faces and fake materials. The feature vector used consists of radiance measurements of the forehead region under 850 and 685 nm illuminations. Facial skin and mask material show linearly separable distributions in the feature space proposed. By simply applying Fisher's linear discriminant, we have achieved 97.78% accuracy in fake face detection. Our method can be easily implemented in commercial face verification systems. PMID:19340250

  9. Robust speech recognition from binary masks.

    PubMed

    Narayanan, Arun; Wang, DeLiang

    2010-11-01

    Inspired by recent evidence that a binary pattern may provide sufficient information for human speech recognition, this letter proposes a fundamentally different approach to robust automatic speech recognition. Specifically, recognition is performed by classifying binary masks corresponding to a word utterance. The proposed method is evaluated using a subset of the TIDigits corpus to perform isolated digit recognition. Despite dramatic reduction of speech information encoded in a binary mask, the proposed system performs surprisingly well. The system is compared with a traditional HMM based approach and is shown to perform well under low SNR conditions. PMID:21110529

  10. Free electron laser with masked chicane

    DOEpatents

    Nguyen, Dinh C.; Carlsten, Bruce E.

    1999-01-01

    A free electron laser (FEL) is provided with an accelerator for outputting electron beam pulses; a buncher for modulating each one of the electron beam pulses to form each pulse into longitudinally dispersed bunches of electrons; and a wiggler for generating coherent light from the longitudinally dispersed bunches of electrons. The electron beam buncher is a chicane having a mask for physically modulating the electron beam pulses to form a series of electron beam bunches for input to the wiggler. In a preferred embodiment, the mask is located in the chicane at a position where each electron beam pulse has a maximum dispersion.

  11. Carbon contamination topography analysis of EUV masks

    SciTech Connect

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  12. Cosmic Ballet or Devil's Mask?

    NASA Astrophysics Data System (ADS)

    2004-04-01

    Stars like our Sun are members of galaxies, and most galaxies are themselves members of clusters of galaxies. In these, they move around among each other in a mostly slow and graceful ballet. But every now and then, two or more of the members may get too close for comfort - the movements become hectic, sometimes indeed dramatic, as when galaxies end up colliding. ESO PR Photo 12/04 shows an example of such a cosmic tango. This is the superb triple system NGC 6769-71, located in the southern Pavo constellation (the Peacock) at a distance of 190 million light-years. This composite image was obtained on April 1, 2004, the day of the Fifth Anniversary of ESO's Very Large Telescope (VLT). It was taken in the imaging mode of the VIsible Multi-Object Spectrograph (VIMOS) on Melipal, one of the four 8.2-m Unit Telescopes of the VLT at the Paranal Observatory (Chile). The two upper galaxies, NGC 6769 (upper right) and NGC 6770 (upper left), are of equal brightness and size, while NGC 6771 (below) is about half as bright and slightly smaller. All three galaxies possess a central bulge of similar brightness. They consist of elderly, reddish stars and that of NGC 6771 is remarkable for its "boxy" shape, a rare occurrence among galaxies. Gravitational interaction in a small galaxy group NGC 6769 is a spiral galaxy with very tightly wound spiral arms, while NGC 6770 has two major spiral arms, one of which is rather straight and points towards the outer disc of NGC 6769. NGC 6770 is also peculiar in that it presents two comparatively straight dark lanes and a fainter arc that curves towards the third galaxy, NGC 6771 (below). It is also obvious from this new VLT photo that stars and gas have been stripped off NGC 6769 and NGC 6770, starting to form a common envelope around them, in the shape of a Devil's Mask. There is also a weak hint of a tenuous bridge between NGC 6769 and NGC 6771. All of these features testify to strong gravitational interaction between the three galaxies

  13. High quality mask storage in an advanced Logic-Fab

    NASA Astrophysics Data System (ADS)

    Jähnert, Carmen; Fritsche, Silvio

    2012-02-01

    High efficient mask logistics as well as safe and high quality mask storage are essential requirements within an advanced lithography area of a modern logic waferfab. Fast operational availability of the required masks at the exposure tool with excellent mask condition requires a safe mask handling, safeguarding of high mask quality over the whole mask usage time without any quality degradation and an intelligent mask logistics. One big challenge is the prevention of haze on high advanced phase shift masks used in a high volume production line for some thousands of 248nm or 193nm exposures. In 2008 Infineon Dresden qualified a customer specific developed semi-bare mask storage system from DMSDynamic Micro Systems in combination with a high advanced mask handling and an interconnected complex logistic system. This high-capacity mask storage system DMS M1900.22 for more than 3000 masks with fully automated mask and box handling as well as full-blown XCDA purge has been developed and adapted to the Infineon Lithotoollandscape using Nikon and SMIF reticle cases. Advanced features for ESD safety and mask security, mask tracking via RFID and interactions with the exposure tools were developed and implemented. The stocker is remote controlled by the iCADA-RSM system, ordering of the requested mask directly from the affected exposure tool allows fast access. This paper discusses the advantages and challenges for this approach as well as the practical experience gained during the implementation of the new system which improves the fab performance with respect to mask quality, security and throughput. Especially the realization of an extremely low and stable humidity level in addition with a well controlled air flow at each mask surface, preventing masks from haze degradation and particle contamination, turns out to be a notable technical achievement. The longterm stability of haze critical masks has been improved significantly. Relevant environmental parameters like

  14. Influence of auditory fatigue on masked pure-tone thresholds

    NASA Technical Reports Server (NTRS)

    Parker, D. E.; Tubbs, R. L.; Johnston, P. A.; Johnston, L. S.

    1976-01-01

    A description is presented of four related experiments involving conditions of 3-kHz low-intensity masking, a replication of experiment I with slight variations, 3-kHz high-intensity masking, and 6-kHz low-intensity masking. The frequencies of the tones which the observers detected were 3 and 6 kHz. The observed change in masked-tone threshold as a function of fatigue is discussed. It is found that masked-tone-detection thresholds remain essentially unchanged following fatigue if the masking-noise intensity is sufficiently great.

  15. Conceptual design of a hybrid parallel mechanism for mask exchanging of TMT

    NASA Astrophysics Data System (ADS)

    Wang, Jianping; Zhou, Hongfei; Li, Kexuan; Zhou, Zengxiang; Zhai, Chao

    2015-10-01

    Mask exchange system is an important part of the Multi-Object Broadband Imaging Echellette (MOBIE) on the Thirty Meter Telescope (TMT). To solve the problem of stiffness changing with the gravity vector of the mask exchange system in the MOBIE, the hybrid parallel mechanism design method was introduced into the whole research. By using the characteristics of high stiffness and precision of parallel structure, combined with large moving range of serial structure, a conceptual design of a hybrid parallel mask exchange system based on 3-RPS parallel mechanism was presented. According to the position requirements of the MOBIE, the SolidWorks structure model of the hybrid parallel mask exchange robot was established and the appropriate installation position without interfering with the related components and light path in the MOBIE of TMT was analyzed. Simulation results in SolidWorks suggested that 3-RPS parallel platform had good stiffness property in different gravity vector directions. Furthermore, through the research of the mechanism theory, the inverse kinematics solution of the 3-RPS parallel platform was calculated and the mathematical relationship between the attitude angle of moving platform and the angle of ball-hinges on the moving platform was established, in order to analyze the attitude adjustment ability of the hybrid parallel mask exchange robot. The proposed conceptual design has some guiding significance for the design of mask exchange system of the MOBIE on TMT.

  16. Hearing Mechanisms and Noise Metrics Related to Auditory Masking in Bottlenose Dolphins (Tursiops truncatus).

    PubMed

    Branstetter, Brian K; Bakhtiari, Kimberly L; Trickey, Jennifer S; Finneran, James J

    2016-01-01

    Odontocete cetaceans are acoustic specialists that depend on sound to hunt, forage, navigate, detect predators, and communicate. Auditory masking from natural and anthropogenic sound sources may adversely affect these fitness-related capabilities. The ability to detect a tone in a broad range of natural, anthropogenic, and synthesized noise was tested with bottlenose dolphins using a psychophysical, band-widening procedure. Diverging masking patterns were found for noise bandwidths greater than the width of an auditory filter. Despite different noise types having equal-pressure spectral-density levels (95 dB re 1 μPa(2)/Hz), masked detection threshold differences were as large as 22 dB. Consecutive experiments indicated that noise types with increased levels of amplitude modulation resulted in comodulation masking release due to within-channel and across-channel auditory mechanisms. The degree to which noise types were comodulated (comodulation index) was assessed by calculating the magnitude-squared coherence between the temporal envelope from an auditory filter centered on the signal and temporal envelopes from flanking filters. Statistical models indicate that masked thresholds in a variety of noise types, at a variety of levels, can be explained with metrics related to the comodulation index in addition to the pressure spectral-density level of noise. This study suggests that predicting auditory masking from ocean noise sources depends on both spectral and temporal properties of the noise. PMID:26610950

  17. Adaptation to different noninvasive ventilation masks in critically ill patients*

    PubMed Central

    da Silva, Renata Matos; Timenetsky, Karina Tavares; Neves, Renata Cristina Miranda; Shigemichi, Liane Hirano; Kanda, Sandra Sayuri; Maekawa, Carla; Silva, Eliezer; Eid, Raquel Afonso Caserta

    2013-01-01

    OBJECTIVE: To identify which noninvasive ventilation (NIV) masks are most commonly used and the problems related to the adaptation to such masks in critically ill patients admitted to a hospital in the city of São Paulo, Brazil. METHODS: An observational study involving patients ≥ 18 years of age admitted to intensive care units and submitted to NIV. The reason for NIV use, type of mask, NIV regimen, adaptation to the mask, and reasons for non-adaptation to the mask were investigated. RESULTS: We evaluated 245 patients, with a median age of 82 years. Acute respiratory failure was the most common reason for NIV use (in 71.3%). Total face masks were the most commonly used (in 74.7%), followed by full face masks and near-total face masks (in 24.5% and 0.8%, respectively). Intermittent NIV was used in 82.4% of the patients. Adequate adaptation to the mask was found in 76% of the patients. Masks had to be replaced by another type of mask in 24% of the patients. Adequate adaptation to total face masks and full face masks was found in 75.5% and 80.0% of the patients, respectively. Non-adaptation occurred in the 2 patients using near-total facial masks. The most common reason for non-adaptation was the shape of the face, in 30.5% of the patients. CONCLUSIONS: In our sample, acute respiratory failure was the most common reason for NIV use, and total face masks were the most commonly used. The most common reason for non-adaptation to the mask was the shape of the face, which was resolved by changing the type of mask employed. PMID:24068269

  18. A new approach for defect inspection on large area masks

    NASA Astrophysics Data System (ADS)

    Scheuring, Gerd; Döbereiner, Stefan; Hillmann, Frank; Falk, Günther; Brück, Hans-Jürgen

    2007-02-01

    Besides the mask market for IC manufacturing, which mainly uses 6 inch sized masks, the market for the so called large area masks is growing very rapidly. Typical applications of these masks are mainly wafer bumping for current packaging processes, color filters on TFTs, and Flip Chip manufacturing. To expose e.g. bumps and similar features on 200 mm wafers under proximity exposure conditions 9 inch masks are used, while in 300 mm wafer bumping processes (Fig. 1) 14 inch masks are handled. Flip Chip manufacturing needs masks up to 28 by 32 inch. This current maximum mask dimension is expected to hold for the next 5 years in industrial production. On the other hand shrinking feature sizes, just as in case of the IC masks, demand enhanced sensitivity of the inspection tools. A defect inspection tool for those masks is valuable for both the mask maker, who has to deliver a defect free mask to his customer, and for the mask user to supervise the mask behavior conditions during its lifetime. This is necessary because large area masks are mainly used for proximity exposures. During this process itself the mask is vulnerable by contacting the resist on top of the wafers. Therefore a regular inspection of the mask after 25, 50, or 100 exposures has to be done during its whole lifetime. Thus critical resist contamination and other defects, which lead to yield losses, can be recognized early. In the future shrinking feature dimensions will require even more sensitive and reliable defect inspection methods than they do presently. Besides the sole inspection capability the tools should also provide highly precise measurement capabilities and extended review options.

  19. Experimental and simulation studies of printability of buried EUV mask defects and study of EUV reflectivity loss mechanisms due to standard EUV mask cleaning processes

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihirkant

    There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography for high-volume semiconductor manufacturing of 14 nm half-pitch patterning and beyond. One of the primary concerns for making this a reality has been the ability to achieve defect-free masks. My study is focused on two aspects related to the performance degradation of the EUV masks namely EUV mask cleaning induced reflectivity loss mechanisms, and the buried multilayer phase defects in EUV masks. Standard EUV mask cleaning processes involve various steps and chemistries that lead to degradation of the multilayer structure, in turn leading to EUV reflectivity loss, hence impacting the throughput. In this work, we developed an understanding of the root causes of how different cleaning chemistries cause EUV reflectivity loss, and quantified these losses. Upon subjecting the mask blanks to multiple cleaning cycles, multilayer degradation observed was in terms of multilayer etching and pitting, surface roughness increase and surface oxidation. We studied each of these phenomena through experiments and simulations, and correlated the extent of EUV reflectivity loss to each of the degradation phenomena. The second aspect of this work involved investigating the printability behavior of buried native phase defects in EUV mask blanks. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of EUV mask defects. In this work, the printability of native mask defects was studied using a novel level-set multilayer growth model that took into account the tool deposition conditions where the multilayer deposition took place. For this study, the native mask blank defects were characterized using atomic force microscopy (AFM) and cross-section transmission electron microscopy (TEM), and the defect printability of these defects was evaluated using simulations implementing the finite-difference time-domain (FDTD) and the

  20. Massively-parallel FDTD simulations to address mask electromagnetic effects in hyper-NA immersion lithography

    NASA Astrophysics Data System (ADS)

    Tirapu Azpiroz, Jaione; Burr, Geoffrey W.; Rosenbluth, Alan E.; Hibbs, Michael

    2008-03-01

    In the Hyper-NA immersion lithography regime, the electromagnetic response of the reticle is known to deviate in a complicated manner from the idealized Thin-Mask-like behavior. Already, this is driving certain RET choices, such as the use of polarized illumination and the customization of reticle film stacks. Unfortunately, full 3-D electromagnetic mask simulations are computationally intensive. And while OPC-compatible mask electromagnetic field (EMF) models can offer a reasonable tradeoff between speed and accuracy for full-chip OPC applications, full understanding of these complex physical effects demands higher accuracy. Our paper describes recent advances in leveraging High Performance Computing as a critical step towards lithographic modeling of the full manufacturing process. In this paper, highly accurate full 3-D electromagnetic simulation of very large mask layouts are conducted in parallel with reasonable turnaround time, using a Blue- Gene/L supercomputer and a Finite-Difference Time-Domain (FDTD) code developed internally within IBM. A 3-D simulation of a large 2-D layout spanning 5μm×5μm at the wafer plane (and thus (20μm×20μm×0.5μm at the mask) results in a simulation with roughly 12.5GB of memory (grid size of 10nm at the mask, single-precision computation, about 30 bytes/grid point). FDTD is flexible and easily parallelizable to enable full simulations of such large layout in approximately an hour using one BlueGene/L "midplane" containing 512 dual-processor nodes with 256MB of memory per processor. Our scaling studies on BlueGene/L demonstrate that simulations up to 100μm × 100μm at the mask can be computed in a few hours. Finally, we will show that the use of a subcell technique permits accurate simulation of features smaller than the grid discretization, thus improving on the tradeoff between computational complexity and simulation accuracy. We demonstrate the correlation of the real and quadrature components that comprise the

  1. Mask cycle time reduction for foundry projects

    NASA Astrophysics Data System (ADS)

    Balasinski, A.

    2011-11-01

    One of key deliverables of foundry based manufacturing is low cycletime. Building new and enhancing existing products by mask changes involves significant logistical effort, which could be reduced by standardizing data management and communication procedures among design house, mask shop, and foundry (fab) [1]. As an example, a typical process of taping out can take up to two weeks in addition to technical effort, for database handling, mask form completion, management approval, PO signoff and JDV review, translating into loss of revenue. In order to reduce this delay, we are proposing to develop a unified online system which should assist with the following functions: database edits, final verifications, document approvals, mask order entries, and JDV review with engineering signoff as required. This would help a growing number of semiconductor products to be flexibly manufactured at different manufacturing sites. We discuss how the data architecture based on a non-relational database management system (NRDMBS) extracted into a relational one (RDMBS) should provide quality information [2], to reduce cycle time significantly beyond 70% for an example 2 week tapeout schedule.

  2. A new mask exposure and analysis facility

    NASA Astrophysics Data System (ADS)

    te Sligte, Edwin; Koster, Norbert; Deutz, Alex; Staring, Wilbert

    2014-10-01

    The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005. EBL2 contains an EUV Beam Line, in which samples can be exposed to EUV irradiation in a controlled environment. Attached to this Beam Line is an XPS system, which can be reached from the Beam Line via an in-vacuum transfer system. This enables surface analysis of exposed masks without breaking vacuum. Automated handling with dual pods is foreseen so that exposed EUV masks will still be usable in EUV lithography tools to assess the imaging impact of the exposure. Compared to the existing system, large improvements in EUV power, intensity, reliability, and flexibility are proposed. Also, in-situ measurements by e.g. ellipsometry is foreseen for real time monitoring of the sample condition. The system shall be equipped with additional ports for EUVR or other analysis tools. This unique facility will be open for external customers and other research groups.

  3. Recent improvements in the MODIS cloud mask

    NASA Astrophysics Data System (ADS)

    Frey, Richard A.; Ackerman, Steven A.; Liu, Yinghui; Strabala, Kathleen I.; Zhang, Hong

    2004-12-01

    Significant improvements have been made to the MODIS cloud mask (MOD35) in preparation for Collection 5 reprocessing and forward stream data production. Most of the modifications are realized for nighttime scenes where polar and oceanic regions will see marked improvement. For polar night scenes, two new spectral tests using the 7.2 μm water vapor absorption band have been added as well as updates to the 3.9-12 μm and 11-12 μm cloud tests. More non-MODIS ancillary data has been added for nighttime processing. Land and sea surface temperature maps provide crucial information for middle and low-level cloud detection and lessen dependence on ocean variability tests. Sun-glint areas are also improved by use of sea surface temperatures to aid in resolving observations with conflicting cloud vs. clear-sky signals, where visible and NIR reflectances are high, but infrared brightness temperatures are relatively warm. Details and examples of new and modified cloud tests are shown and various methods employed to evaluate the new cloud mask results. Day vs. night sea surface temperatures derived from MODIS radiances and using only the MODIS cloud mask for cloud screening are contrasted. Frequencies of cloud from sun-glint regions will be shown as a function of sun-glint angle to gain a sense of cloud mask quality in those regions.

  4. The laryngeal mask airway in obstetrical anaesthesia.

    PubMed

    Gataure, P S; Hughes, J A

    1995-02-01

    The laryngeal mask airway (LMA) has been used extensively to provide a safe airway in spontaneously breathing patients who are not at risk from aspiration of gastric contents. The role of the LMA in the event of a failed intubation in an obstetrical patient, and its place in a failed intubation drill remains unclear. Two hundred and fifty consultant obstetric anaesthetists in the United Kingdom were asked to complete an anonymous questionnaire regarding their views about using the laryngeal mask airway (LMA) in obstetrical anaesthesia. The LMA was available in 91.4% of obstetric units. Seventy-two per cent of anaesthetists were in favour of using the LMA to maintain oxygenation when tracheal intubation had failed and ventilation using a face mask was inadequate. Twenty-four respondents had had personal experience with the LMA in obstetrical anaesthesia, eight of whom stated that the LMA had proved to be a lifesaver. We believe that the LMA has a role in obstetrical anaesthesia when tracheal intubation has failed and ventilation using a face mask proves to be impossible, and it should be inserted before attempting cricothyroidectomy. PMID:7720155

  5. Associative Learning of Discrimination with Masked Stimuli

    ERIC Educational Resources Information Center

    Marcos, Jose L.

    2007-01-01

    Great controversy exists on whether associative learning occurs without awareness. In Experiment 1, 31 participants received discrimination training by repeated presentations of two stimulus sequences (S1[subscript A] right arrow S2[subscript A], and S1[subscript B] right arrow S2[subscript B]), S1 being a masked stimulus. S2 were imperative…

  6. Testing Tactile Masking between the Forearms.

    PubMed

    D'Amour, Sarah; Harris, Laurence R

    2016-01-01

    Masking, in which one stimulus affects the detection of another, is a classic technique that has been used in visual, auditory, and tactile research, usually using stimuli that are close together to reveal local interactions. Masking effects have also been demonstrated in which a tactile stimulus alters the perception of a touch at a distant location. Such effects can provide insight into how components of the body's representations in the brain may be linked. Occasional reports have indicated that touches on one hand or forearm can affect tactile sensitivity at corresponding contralateral locations. To explore the matching of corresponding points across the body, we can measure the spatial tuning and effect of posture on contralateral masking. Careful controls are required to rule out direct effects of the remote stimulus, for example by mechanical transmission, and also attention effects in which thresholds may be altered by the participant's attention being drawn away from the stimulus of interest. The use of this technique is beneficial as a behavioural measure for exploring which parts of the body are functionally connected and whether the two sides of the body interact in a somatotopic representation. This manuscript describes a behavioural protocol that can be used for studying contralateral tactile masking. PMID:26889736

  7. Defect printability in CPL mask technology

    NASA Astrophysics Data System (ADS)

    Kuijten, Jan-Pieter; Verhappen, Arjan; Pijnenburg, Wil; Conley, Will; Litt, Lloyd C.; Wu, Wei; Montgomery, Patrick; Roman, Bernard J.; Kasprowicz, Bryan S.; Progler, Christopher J.; Socha, Robert J.; Van Den Broeke, Douglas J.; Schaefer, Erika; Cook, Pat

    2004-05-01

    Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET"s). The race to smaller and smaller geometry"s has forced device manufacturers to k1"s approaching 0.40. The authors have been investigating the use of Chromeless phase-shifting masks (CPL) exposed with ArF, high numerical aperture (NA), and off-axis illumination (OAI) has been shown to produce production worthy sub-100nm resist patterns with acceptable overlapped process window across feature pitch. These new reticle technologies have many issues that are similar to simple binary masks. The authors have investigated the printability of defects in CPL mask technology. Programmed defects of various sizes and types have been simulated and printed for sub 100nm imaging. High resolution scanning electron microscopy has been used to characterize these defects and develop an understanding of size and type that prints. In this paper the authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. The authors have built a number of test structures that require superior 2D control for SRAM gate structures. Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds.

  8. Nikon EUVL development progress update

    NASA Astrophysics Data System (ADS)

    Miura, Takaharu; Murakami, Katsuhiko; Kawai, Hidemi; Kohama, Yoshiaki; Morita, Kenji; Hada, Kazunari; Ohkubo, Yukiharu

    2010-04-01

    Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed.

  9. Forward masking in different cochlear implant systems

    NASA Astrophysics Data System (ADS)

    Boëx, Colette; Kós, Maria-Izabel; Pelizzone, Marco

    2003-10-01

    The goal of this study was to evaluate, from a psychophysical standpoint, the neural spread of excitation produced by the stimulation of different types of intracochlear electrode arrays: the Ineraid™, the Clarion™ S-Series on its own or with the Electrode Positioning System (EPS), and the Clarion™ HiFocus-I with the EPS. The EPS is an independent silicone part designed to bring the electrode array close to the modiolus. Forward masking was evaluated in 12 adult subjects (3 Ineraid™, 4 Clarion™ S-Series, 3 Clarion™ S-Series+EPS, 3 HiFocus-I+EPS) by psychophysical experiments conducted using trains of biphasic stimuli (813 pulses per second, 307.6 μs/phase). Masker signals (+8 dB re: threshold, 300 ms) were applied to the most apical electrode. Probe signals (30 ms, 10-ms postmasker) were delivered to more basal electrodes. Masked and unmasked detection thresholds of probe signals were measured. For both Clarion™ HiFocus-I subjects, measurements were conducted in both monopolar and bipolar stimulus configurations. No major differences were found in forward masking between the different intracochlear electrode arrays tested in the monopolar configuration at suprathreshold levels equivalent to those used in speech-coding strategies, but significant differences were found between subjects. A significant negative correlation also was found between the level of forward masking and the consonant identification performance. These measurements showed that the neural spread of excitation was more restricted in the bipolar configuration than in the monopolar configuration for HiFocus-I subjects. It was found that CIS strategies implemented without using apical electrodes, which showed high levels of masking, could improve consonant identification.

  10. Mask-holding mechanism for an e-beam x-ray mask writer

    NASA Astrophysics Data System (ADS)

    Kunioka, Tatsuya; Shimazu, Nobuo; Shimizu, Akira; Sakai, Tomoaki; Kuriyama, Youichi

    1995-07-01

    For high absolute pattern placement accuracy and high throughput in x- ray mask writing, it is very important to firmly hold the mask with little holding deformation and large thermal conduction. For these purposes we have developed a new 'triple-chuck' mask holding mechanism. This triple-chuck mechanism is a hybrid of three-point-contact and conventional electrostatic-chuck holding mechanism, and, as the name implies, it uses three small-area electrostatic chucks. To determine the suitable shape, area, and position of the electrostatic chucks, we performed deformation simulation using the finite element method, and also conducted thermal conduction simulations. The results suggested that the triple-chuck mechanism could attain targets set for an x-ray mask with a feature size of 0.2 micrometers . Accordingly, we installed the new holding mechanism in the EB-X1 writer and found that when holding 3-inch mask (2-mm thick, before bulk etching), there is no microslippage between the mask and holding mechanism when the XY-stage is moved with an acceleration of 0.3 G and the maximum holding deformation is 0.22 micrometers in a 25-mm-square patterning area. This corresponds to the absolute pattern placement accuracy degradation of less than 11 nm in the patterning area. About 30 minutes pass before the mask temperature is within 0.1 degree of the holding-mechanism temperature. This was determined by two different methods: a patterning method and marek detection. These experimental results confirmed the triple-chuck holding mechanism attained the targets set for an x-ray mask with a feature size of 0.2 micrometers .

  11. Fire, snowball, mask, movie: how leaders spark and sustain change.

    PubMed

    Fuda, Peter; Badham, Richard

    2011-11-01

    What does it take for an average manager to become a highly effective leader? There are countless books, models, and formulas for success. But the truth is that leadership transformation is deeply dependent on circumstances. The key for those who seek it is to absorb the insights that can be drawn from the successful experiences of others. During their in-depth study of seven CEOs, Fuda and Badham uncovered seven interdependent metaphors, which they went on to test with more than 10,000 managers on four continents. The authors discuss four of those metaphors--fire, snowball, mask, and movie--here, in the context of individual managers' experiences. PMID:22111431

  12. EUV mask infrastructure readiness and gaps for TD and HVM

    NASA Astrophysics Data System (ADS)

    Liang, Ted; Magana, John; Chakravorty, Kishore; Panning, Eric; Zhang, Guojing

    2015-10-01

    The industry is transitioning EUV lithography from feasibility phase to technology development. EUV mask infrastructure needs to be prepared to support the technology development and ready to enable the implementation of EUV lithography for production. In this paper, we review the current status and assess the readiness of key infrastructure modules in EUV mask fabrication, inspection and control, and usage in a mask cycle: blank quality and inspection, pattern inspection, defect disposition and repair, pellicle integration, and handling of pelliclized masks.

  13. Fine pattern fabrication property of binary mask and attenuated phase shift mask

    NASA Astrophysics Data System (ADS)

    Yamazaki, Taichi; Kojima, Yosuke; Yamana, Mitsuharu; Haraguchi, Takashi; Tanaka, Tsuyoshi

    2009-04-01

    For 45nm and 32nm node technology, the challenges for resolution and CD control of mask patterns become the steeper mountain path. Especially, Sub Resolution Assist Feature (SRAF) is the smallest pattern on mask and amplifies the difficulty of mask fabrication. In order to improve the resolution of fine patterns, the influence of wet processing cannot be neglected, because it causes the pattern collapsing. Wet processing of mask-making can be divided into resist development and cleaning. In this study, the root causes of pattern collapsing are investigated at each wet processing. It is confirmed that thin resist can enhance the resolution limit of resist pattern and hard-mask blank, such as OMOG: Opaque MoSi On Glass, is suitable for thinner resist under 1500A. The pattern collapsing of OMOG is compared with that of Att.PSM at the cleaning before and after Cr stripping. Mask inspection finds that pattern collapsing can be suppressed by OMOG at both cleanings. It is because OMOG has lower cleaning stress than Att.PSM due to lower aspect-ratio. This benefit is demonstrated by cleaning stress simulation. Additionally, it is found that the SRAF size of OMOG can be wider than Att.PSM by optical simulation. From these results, OMOG has much advantage of fine pattern fabrication and is the optimal blank for 32nm node and beyond.

  14. Serial robot for the trajectory optimization and error compensation of TMT mask exchange system

    NASA Astrophysics Data System (ADS)

    Wang, Jianping; Zhang, Feifan; Zhou, Zengxiang; Zhai, Chao

    2015-10-01

    Mask exchange system is the main part of Multi-Object Broadband Imaging Echellette (MOBIE) on the Thirty Meter Telescope (TMT). According to the conception of the TMT mask exchange system, the pre-design was introduced in the paper which was based on IRB 140 robot. The stiffness model of IRB 140 in SolidWorks was analyzed under different gravity vectors for further error compensation. In order to find the right location and path planning, the robot and the mask cassette model was imported into MOBIE model to perform different schemes simulation. And obtained the initial installation position and routing. Based on these initial parameters, IRB 140 robot was operated to simulate the path and estimate the mask exchange time. Meanwhile, MATLAB and ADAMS software were used to perform simulation analysis and optimize the route to acquire the kinematics parameters and compare with the experiment results. After simulation and experimental research mentioned in the paper, the theoretical reference was acquired which could high efficient improve the structure of the mask exchange system parameters optimization of the path and precision of the robot position.

  15. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Gas masks; required components. 84.111 Section 84.111 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES OCCUPATIONAL SAFETY AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.111 Gas masks; required components. (a) Each...

  16. 42 CFR 84.117 - Gas mask containers; minimum requirements.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 42 Public Health 1 2010-10-01 2010-10-01 false Gas mask containers; minimum requirements. 84.117 Section 84.117 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES OCCUPATIONAL SAFETY AND HEALTH RESEARCH AND RELATED ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Gas Masks § 84.117 Gas mask containers;...

  17. Does "Darkness" Lead to "Happiness"? Masked Suffix Priming Effects

    ERIC Educational Resources Information Center

    Dunabeitia, Jon Andoni; Perea, Manuel; Carreiras, Manuel

    2008-01-01

    Masked affix priming effects have usually been obtained for words sharing the initial affix (e.g., "reaction"-"REFORM"). However, prior evidence on masked suffix priming effects (e.g., "baker"-"WALKER") is inconclusive. In the present series of masked priming lexical decision experiments, a target word was briefly preceded by a morphologically or…

  18. 21 CFR 868.5550 - Anesthetic gas mask.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over...

  19. 21 CFR 868.5550 - Anesthetic gas mask.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over...

  20. 21 CFR 868.5550 - Anesthetic gas mask.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over...

  1. 21 CFR 868.5550 - Anesthetic gas mask.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over...

  2. 21 CFR 868.5550 - Anesthetic gas mask.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Anesthetic gas mask. 868.5550 Section 868.5550...) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5550 Anesthetic gas mask. (a) Identification. An anesthetic gas mask is a device, usually made of conductive rubber, that is positioned over...

  3. Application of calibration masks to TV vidicon tube

    NASA Technical Reports Server (NTRS)

    Brawner, E. L.; Brown, J. J.; Jonker, W. J.

    1971-01-01

    Photographic application method devised for overlaying test pattern masks on TV camera vidicon tubes prints the mask within 0.0076 cm of the vertical and horizontal center lines of the tube face. Entire process, including mask fabrication and alignment procedure, requires less than 10 minutes.

  4. 42 CFR 84.111 - Gas masks; required components.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 42 Public Health 1 2014-10-01 2014-10-01 false Gas masks; required components. 84.111 Section 84.111 Public Health PUBLIC HEALTH SERVICE, DEPARTMENT OF HEALTH AND HUMAN SERVICES OCCUPATIONAL SAFETY....111 Gas masks; required components. (a) Each gas mask described in § 84.110 shall, where its...

  5. On the Nature of Phonological Assembly: Evidence from Backward Masking.

    ERIC Educational Resources Information Center

    Perry, Conrad; Ziegler, Johannes C.

    2002-01-01

    Used backward masking paradigm to investigate nature and time course of phonological assembly. Two experiments examined to what extent phonological assembly is a serial process. One showed recognition rates in a backward masking task varied as a function of the serial position of phonemes that were shared between backward masks and target words;…

  6. Attributes of tinnitus and the acceptance of masking.

    PubMed

    Vernon, J; Griest, S; Press, L

    1990-01-01

    Various characteristics of tinnitus were surveyed to determine whether they were associated with the acceptance of masking, which is used as a relief procedure for tinnitus. The characteristics considered were duration, loudness match, minimum masking level, and residual inhibition. Data for the characteristics of tinnitus were obtained from the Tinnitus Data Registry at the Oregon Hearing Research Center, which contains information on 784 tinnitus patients. The acceptance of masking was determined by each individual patient based on actual tests with wearable masking units. Variations in the individual characteristics listed above were not found to be significantly associated with the acceptance of masking and thus should not be used a priori to deny patients the opportunity for possible relief of their tinnitus. A masking indicator was found to be significantly (P = .03) associated with the acceptance of masking. This masking indicator is obtained by subtracting the loudness match of the tinnitus from the minimum masking level. When the masking indicator was 10 dB or less, the acceptance of masking was in excess of 50%. The data presented may help to dispel some current misconceptions about the masking of tinnitus. PMID:2181884

  7. Homophone Dominance Modulates the Phonemic-Masking Effect.

    ERIC Educational Resources Information Center

    Berent, Iris; Van Orden, Guy C.

    2000-01-01

    Finds (1) positive phonemic-masking effects occurred for dominant homophones; (2) null phonemic-masking effects occurred for subordinate homophones; and (3) subordinate homophones were much more likely to be falsely identified as their dominant mate. Suggests the source of these null phonemic-masking is itself a phonology effect. Concludes…

  8. The serial nature of the masked onset priming effect revisited.

    PubMed

    Mousikou, Petroula; Coltheart, Max

    2014-01-01

    Reading aloud is faster when target words/nonwords are preceded by masked prime words/nonwords that share their first sound with the target (e.g., save-SINK) compared to when primes and targets are unrelated to each other (e.g., farm-SINK). This empirical phenomenon is the masked onset priming effect (MOPE) and is known to be due to serial left-to-right processing of the prime by a sublexical reading mechanism. However, the literature in this domain lacks a critical experiment. It is possible that when primes are real words their orthographic/phonological representations are activated in parallel and holistically during prime presentation, so any phoneme overlap between primes and targets (and not just initial-phoneme overlap) could facilitate target reading aloud. This is the prediction made by the only computational models of reading aloud that are able to simulate the MOPE, namely the DRC1.2.1, CDP+, and CDP++ models. We tested this prediction in the present study and found that initial-phoneme overlap (blip-BEST), but not end-phoneme overlap (flat-BEST), facilitated target reading aloud compared to no phoneme overlap (junk-BEST). These results provide support for a reading mechanism that operates serially and from left to right, yet are inconsistent with all existing computational models of single-word reading aloud. PMID:24853396

  9. Temperature rise of the mask-resist assembly during LIGA exposure.

    SciTech Connect

    Ting, Aili

    2004-11-01

    Deep X-ray lithography on PMMA resist is used in the LIGA process. The resist is exposed to synchrotron X-rays through a patterned mask and then is developed in a liquid developer to make high aspect ratio microstructures. The limitations in dimensional accuracies of the LIGA generated microstructure originate from many sources, including synchrotron and X-ray physics, thermal and mechanical properties of mask and resist, and from the kinetics of the developer. This work addresses the thermal analysis and temperature rise of the mask-resist assembly during exposure in air at the Advanced Light Source (ALS) synchrotron. The concern is that dimensional errors generated at the mask and the resist due to thermal expansion will lower the accuracy of the lithography. We have developed a three-dimensional finite-element model of the mask and resist assembly that includes a mask with absorber, a resist with substrate, three metal holders, and a water-cooling block. We employed the LIGA exposure-development software LEX-D to calculate volumetric heat sources generated in the assembly by X-ray absorption and the commercial software ABAQUS to calculate heat transfer including thermal conduction inside the assembly, natural and forced convection, and thermal radiation. at assembly outer and/or inner surfaces. The calculations of assembly maximum temperature. have been compared with temperature measurements conducted at ALS. In some of these experiments, additional cooling of the assembly was produced by forced nitrogen flow ('nitrogen jets') directed at the mask surface. The temperature rise in the silicon mask and the mask holder comes directly from the X-ray absorption, but nitrogen jets carry away a significant portion of heat energy from the mask surface, while natural convection carries away negligibly small amounts energy from the holder. The temperature rise in PMMA resist is mainly from heat conducted from the silicon substrate backward to the resist and from the inner

  10. Multi-part mask for implanting workpieces

    DOEpatents

    Webb, Aaron P.; Carlson, Charles T.

    2016-05-10

    A multi-part mask has a pattern plate, which includes a planar portion that has the desired aperture pattern to be used during workpiece processing. The multi-part mask also has a mounting frame, which is used to hold the pattern plate. Prior to assembly, the pattern plate has an aligning portion, which has one or more holes through which reusable alignment pins are inserted. These alignment pins enter kinematic joints disposed on the mounting frame, which serve to precisely align the pattern plate to the mounting frame. After the pattern plate has been secured to the mounting frame, the aligning portion can be detached from the pattern plate. The alignment pins can be reused at a later time. In some embodiments, the pattern plate can later be removed from the mounting frame, so that the mounting frame may be reused.

  11. Informational masking of speech in dyslexic children.

    PubMed

    Calcus, Axelle; Colin, Cécile; Deltenre, Paul; Kolinsky, Régine

    2015-06-01

    Studies evaluating speech perception in noise have reported inconsistent results regarding a potential deficit in dyslexic children. So far, most of them investigated energetic masking. The present study evaluated situations inducing mostly informational masking, which reflects cognitive interference induced by the masker. Dyslexic children were asked to identify a female target syllable presented in quiet, babble, unmodulated, and modulated speech-shaped noise. Whereas their performance was comparable to normal-reading children in quiet, it dropped significantly in all noisy conditions compared to age-, but not reading level-matched controls. Interestingly, noise affected similarly the reception of voicing, place, and manner of articulation in dyslexic and normal-reading children. PMID:26093461

  12. Phase measurements of EUV mask defects

    DOE PAGESBeta

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; Benk, Markus P.; Goldberg, Kenneth A.; Neureuther, Andrew R.; Naulleau, Patrick P.; Waller, Laura

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than themore » conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.« less

  13. Phase measurements of EUV mask defects

    SciTech Connect

    Claus, Rene A.; Wang, Yow-Gwo; Wojdyla, Antoine; Benk, Markus P.; Goldberg, Kenneth A.; Neureuther, Andrew R.; Naulleau, Patrick P.; Waller, Laura

    2015-02-22

    Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than the conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.

  14. Numerically designed phase-mask for stellar coronagraph

    NASA Astrophysics Data System (ADS)

    Baba, Naoshi; Murakami, Naoshi; Miura, Noriaki; Tamura, Motohide

    2015-09-01

    Phase-mask coronagraph holds the ability to detect exoplanets very close to their parent star. We report a new kind of phase mask that performs the contrast ratio of more than the tenth power of 10 for a circular aperture with shades of a secondary mirror and spiders. The phase distribution of the phase mask is numerically obtained by making the leaked light distribute outside the transparent part of the pupil. We applied the hybrid input-output algorithm, one of phase retrieval methods, to find the phase distribution of the phase mask. We show the characteristics of thus obtained phase mask.

  15. High speed mask inspection data prep flow based on pipelining

    NASA Astrophysics Data System (ADS)

    Hung, Dan; Morales, Domingo; Canepa, Juan Pablo; Kim, Stephen; Liu, Po; Sier, Jean-Paul; LoPresti, Patrick

    2011-11-01

    Mask manufacturers are continuously challenged as a result of the explosive growth in mask pattern data volume. This paper presents a new pipelined approach to mask data preparation for inspection that significantly reduces the data preparation times compared to the conventional flows used today. The focus of this approach minimizes I/O bottlenecks and allows for higher throughput on computer clusters. This solution is optimized for the industry standard OASIS.MASK format. These enhancements in the data processing flow, along with optimizations in the data preparation system architecture, offer a more efficient and highly scalable solution for mask inspection data preparation.

  16. Multiplexing of encrypted data using fractal masks.

    PubMed

    Barrera, John F; Tebaldi, Myrian; Amaya, Dafne; Furlan, Walter D; Monsoriu, Juan A; Bolognini, Néstor; Torroba, Roberto

    2012-07-15

    In this Letter, we present to the best of our knowledge a new all-optical technique for multiple-image encryption and multiplexing, based on fractal encrypting masks. The optical architecture is a joint transform correlator. The multiplexed encrypted data are stored in a photorefractive crystal. The fractal parameters of the key can be easily tuned to lead to a multiplexing operation without cross talk effects. Experimental results that support the potential of the method are presented. PMID:22825170

  17. Mask Analysis Program (MAP) reference manual

    NASA Technical Reports Server (NTRS)

    Mitchell, C. L.

    1976-01-01

    A document intended to serve as a User's Manual and a Programmer's Manual for the Mask Analysis Program is presented. The first portion of the document is devoted to the user. It contains all of the information required to execute MAP. The remainder of the document describes the details of MAP software logic. Although the information in this portion is not required to run the program, it is recommended that every user review it to gain an appreciation for the program functions.

  18. The EOS CERES Global Cloud Mask

    NASA Technical Reports Server (NTRS)

    Berendes, T. A.; Welch, R. M.; Trepte, Q.; Schaaf, C.; Baum, B. A.

    1996-01-01

    To detect long-term climate trends, it is essential to produce long-term and consistent data sets from a variety of different satellite platforms. With current global cloud climatology data sets, such as the International Satellite Cloud Climatology Experiment (ISCCP) or CLAVR (Clouds from Advanced Very High Resolution Radiometer), one of the first processing steps is to determine whether an imager pixel is obstructed between the satellite and the surface, i.e., determine a cloud 'mask.' A cloud mask is essential to studies monitoring changes over ocean, land, or snow-covered surfaces. As part of the Earth Observing System (EOS) program, a series of platforms will be flown beginning in 1997 with the Tropical Rainfall Measurement Mission (TRMM) and subsequently the EOS-AM and EOS-PM platforms in following years. The cloud imager on TRMM is the Visible/Infrared Sensor (VIRS), while the Moderate Resolution Imaging Spectroradiometer (MODIS) is the imager on the EOS platforms. To be useful for long term studies, a cloud masking algorithm should produce consistent results between existing (AVHRR) data, and future VIRS and MODIS data. The present work outlines both existing and proposed approaches to detecting cloud using multispectral narrowband radiance data. Clouds generally are characterized by higher albedos and lower temperatures than the underlying surface. However, there are numerous conditions when this characterization is inappropriate, most notably over snow and ice of the cloud types, cirrus, stratocumulus and cumulus are the most difficult to detect. Other problems arise when analyzing data from sun-glint areas over oceans or lakes over deserts or over regions containing numerous fires and smoke. The cloud mask effort builds upon operational experience of several groups that will now be discussed.

  19. Similar results for face mask versus mouthpiece during incremental exercise to exhaustion.

    PubMed

    Wagner, Dale R; Clark, Nicolas W

    2016-01-01

    Investigations in the 1990s evaluated the influence of breathing assemblies on respiratory variables at rest and during exercise; however, research on new models of breathing assemblies is lacking. This study compared metabolic gas analysis data from a mouthpiece with a noseclip (MOUTH) and a face mask (MASK). Volunteers (7 males, 7 females; 25.1 ± 2.7 years) completed two maximal treadmill tests within 1 week, one MOUTH and one MASK, in random order. The difference in maximal oxygen consumption (VO2max) between MOUTH (52.7 ± 11.3 ml · kg(-1) · min(-1)) and MASK (52.2 ± 11.7 ml · kg(-1) · min(-1)) was not significant (P = 0.53). Likewise, the mean MOUTH-MASK differences in minute ventilation (VE), fraction of expired oxygen (FEO2) and carbon dioxide (FECO2), respiration rate (RR), tidal volume (Vt), heart rate (HR), and rating of perceived exertion (RPE) at maximal and submaximal intensities were not significant (P > 0.05). Furthermore, there was no systematic bias in the error scores (r = -0.13, P = 0.66), and 12 of the 14 participants had a VO2max difference of ≤3 ml · kg(-1) · min(-1) between conditions. Finally, there was no clear participant preference for using the MOUTH or MASK. Selection of MOUTH or MASK will not affect the participant's gas exchange or breathing patterns. PMID:26238160

  20. Mask-to-wafer alignment system

    DOEpatents

    Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

    2003-11-04

    A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

  1. High Reading Skills Mask Dyslexia in Gifted Children.

    PubMed

    van Viersen, Sietske; Kroesbergen, Evelyn H; Slot, Esther M; de Bree, Elise H

    2016-01-01

    This study investigated how gifted children with dyslexia might be able to mask literacy problems and the role of possible compensatory mechanisms. The sample consisted of 121 Dutch primary school children that were divided over four groups (typically developing [TD] children, children with dyslexia, gifted children, gifted children with dyslexia). The test battery included measures of literacy (reading/spelling) and cognitive abilities related to literacy and language (phonological awareness [PA], rapid automatized naming [RAN], verbal short-term memory [VSTM], working memory [WM], grammar, and vocabulary). It was hypothesized that gifted children with dyslexia would outperform children with dyslexia on literacy tests. In addition, a core-deficit model including dyslexia-related weaknesses and a compensational model involving giftedness-related strengths were tested using Bayesian statistics to explain their reading/spelling performance. Gifted children with dyslexia performed on all literacy tests in between children with dyslexia and TD children. Their cognitive profile showed signs of weaknesses in PA and RAN and strengths in VSTM, WM, and language skills. Findings indicate that phonology is a risk factor for gifted children with dyslexia, but this is moderated by other skills such as WM, grammar, and vocabulary, providing opportunities for compensation of a cognitive deficit and masking of literacy difficulties. PMID:24935885

  2. Developing a Method to Mask Trees in Commercial Multispectral Imagery

    NASA Astrophysics Data System (ADS)

    Becker, S. J.; Daughtry, C. S. T.; Jain, D.; Karlekar, S. S.

    2015-12-01

    The US Army has an increasing focus on using automated remote sensing techniques with commercial multispectral imagery (MSI) to map urban and peri-urban agricultural and vegetative features; however, similar spectral profiles between trees (i.e., forest canopy) and other vegetation result in confusion between these cover classes. Established vegetation indices, like the Normalized Difference Vegetation Index (NDVI), are typically not effective in reliably differentiating between trees and other vegetation. Previous research in tree mapping has included integration of hyperspectral imagery (HSI) and LiDAR for tree detection and species identification, as well as the use of MSI to distinguish tree crowns from non-vegetated features. This project developed a straightforward method to model and also mask out trees from eight-band WorldView-2 (1.85 meter x 1.85 meter resolution at nadir) satellite imagery at the Beltsville Agricultural Research Center in Beltsville, MD spanning 2012 - 2015. The study site included tree cover, a range of agricultural and vegetative cover types, and urban features. The modeling method exploits the product of the red and red edge bands and defines accurate thresholds between trees and other land covers. Results show this method outperforms established vegetation indices including the NDVI, Soil Adjusted Vegetation Index, Normalized Difference Water Index, Simple Ratio, and Normalized Difference Red Edge Index in correctly masking trees while preserving the other information in the imagery. This method is useful when HSI and LiDAR collection are not possible or when using archived MSI.

  3. The narcissistic mask: an exploration of 'the defensive grandiosity hypothesis'.

    PubMed

    Thomas, Justin; Hashmi, Amani Al; Chung, Man Cheung; Morgan, Keith; Lyons, Minna

    2013-05-01

    Narcissism has been conceptualized as involving attempts to defend against negative self-schemata (implicit negative beliefs about one's own self-worth). This idea has been termed the 'mask model of narcissism'. This study explores the mask model, examining the association between extreme narcissistic personality traits and performance on a task purported to assess the influence of negative self-schemata. Participants (n = 232) from the UK and the UAE completed the Narcissistic Personality Inventory and also performed an incidental learning task involving the surprise recall of self-referential adjectives (traits). A greater recall of negative adjectives was viewed as indicative of negative self-schemata. Looking at the sample as a whole, there were no associations between narcissistic traits and negative adjective recall. However, amongst those scoring in the upper quartile of the Narcissistic Personality Inventory, narcissism scores were positively correlated with the recall of negative adjectives even after controlling for age and memory. Narcissism may reflect self-enhancement strategies rooted in negative self-beliefs. PMID:24343942

  4. Envelope and intensity based prediction of psychoacoustic masking and speech intelligibility.

    PubMed

    Biberger, Thomas; Ewert, Stephan D

    2016-08-01

    Human auditory perception and speech intelligibility have been successfully described based on the two concepts of spectral masking and amplitude modulation (AM) masking. The power-spectrum model (PSM) [Patterson and Moore (1986). Frequency Selectivity in Hearing, pp. 123-177] accounts for effects of spectral masking and critical bandwidth, while the envelope power-spectrum model (EPSM) [Ewert and Dau (2000). J. Acoust. Soc. Am. 108, 1181-1196] has been successfully applied to AM masking and discrimination. Both models extract the long-term (envelope) power to calculate signal-to-noise ratios (SNR). Recently, the EPSM has been applied to speech intelligibility (SI) considering the short-term envelope SNR on various time scales (multi-resolution speech-based envelope power-spectrum model; mr-sEPSM) to account for SI in fluctuating noise [Jørgensen, Ewert, and Dau (2013). J. Acoust. Soc. Am. 134, 436-446]. Here, a generalized auditory model is suggested combining the classical PSM and the mr-sEPSM to jointly account for psychoacoustics and speech intelligibility. The model was extended to consider the local AM depth in conditions with slowly varying signal levels, and the relative role of long-term and short-term SNR was assessed. The suggested generalized power-spectrum model is shown to account for a large variety of psychoacoustic data and to predict speech intelligibility in various types of background noise. PMID:27586734

  5. Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

    NASA Astrophysics Data System (ADS)

    Chandramouli, Mahesh; Olshausen, Bob; Korobko, Yulia; Henrichs, Sven; Qu, Ping; Ma, Jian; Auches, Bruce; Cole, Damon; Ostrom, Thomas; Beyerl, Angela; Eklund, Robert; Zerne, Raoul; Goransson, Peter; Persson, Magnus; Newman, Tom

    2005-06-01

    Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

  6. The masking of beluga whale (Delphinapterus leucas) vocalizations by icebreaker noise

    NASA Astrophysics Data System (ADS)

    Erbe, Christine

    1998-11-01

    This thesis examines the masking effect of underwater noise on beluga whale communication. As ocean water is greatly opaque for light but well conducting for sound, marine mammals rely primarily on their hearing for orientation and communication. Man-made underwater noise has the potential of interfering with sounds used by marine mammals. Masking to the point of incomprehensibility can have fatal results-for the individual, but ultimately for the entire species. As part of our understanding of whether marine mammals can cope with human impact on nature, this thesis is the first to study the interference of real ocean noises with complex animal vocalizations. At the Vancouver Aquarium, a beluga whale was trained for acoustic experiments, during which masked hearing thresholds were measured. Focus lay on noise created by icebreaking ships in the Arctic. As experiments with trained animals are time and cost expensive, various techniques were examined for their ability to model the whale's response. These were human hearing tests, visual spectrogram discrimination, matched filtering, spectrogram cross-correlation, critical band cross-correlation, adaptive filtering and various types of artificial neural networks. The most efficient method with respect to similarity to the whale's data and speed, was a backpropagation neural net. Masked hearing thresholds would be of little use if they could not be related to accessible quantities in the wild. An ocean sound propagation model was applied to determine critical distances between a noise source, a calling whale and a listening whale. Colour diagrams, called maskograms, were invented to illustrate zones of masking in the wild. Results are that bubbler system noise with a source level of 194 dB re 1 μPa at 1 m has a maximum radius of masking of 15 km in a 3- dimensional ocean. Propeller noise with a source level of 203 dB re 1 μPa at 1 m has a maximum radius of masking of 22 km. A naturally occurring icecracking event

  7. Real time validation of GPS TEC precursor mask for Greece

    NASA Astrophysics Data System (ADS)

    Pulinets, Sergey; Davidenko, Dmitry

    2013-04-01

    It was established by earlier studies of pre-earthquake ionospheric variations that for every specific site these variations manifest definite stability in their temporal behavior within the time interval few days before the seismic shock. This self-similarity (characteristic to phenomena registered for processes observed close to critical point of the system) permits us to consider these variations as a good candidate to short-term precursor. Physical mechanism of GPS TEC variations before earthquakes is developed within the framework of Lithosphere-Atmosphere-Ionosphere Coupling (LAIC) model. Taking into account the different tectonic structure and different source mechanisms of earthquakes in different regions of the globe, every site has its individual behavior in pre-earthquake activity what creates individual "imprint" on the ionosphere behavior at every given point. Just this so called "mask" of the ionosphere variability before earthquake in the given point creates opportunity to detect anomalous behavior of electron concentration in ionosphere basing not only on statistical processing procedure but applying the pattern recognition technique what facilitates the automatic recognition of short-term ionospheric precursors of earthquakes. Such kind of precursor mask was created using the GPS TEC variation around the time of 9 earthquakes with magnitude from M6.0 till M6.9 which took place in Greece within the time interval 2006-2011. The major anomaly revealed in the relative deviation of the vertical TEC was the positive anomaly appearing at ~04PM UT one day before the seismic shock and lasting nearly 12 hours till ~04AM UT. To validate this approach it was decided to check the mask in real-time monitoring of earthquakes in Greece starting from the 1 of December 2012 for the earthquakes with magnitude more than 4.5. During this period (till 9 of January 2013) 4 cases of seismic shocks were registered, including the largest one M5.7 on 8 of January. For all of

  8. Developing a cloud mask climatology covering two Meteosat satellite generations

    NASA Astrophysics Data System (ADS)

    Posselt, Rebekka; Stöckli, Reto; Liniger, Mark A.

    2013-04-01

    Long term cloud cover observations from satellites are fundamental for climate model validation and climate monitoring. Further, they support ground-based observations in regions with sparse coverage. Additionally, information on cloud cover is needed to derive other physical parameters such as surface radiation fluxes or clear sky and cloudy atmospheric states and is of high relevance for the solar energy sector. Within the current project phase of the Satellite Application Facility on Climate Monitoring (CM SAF) an algorithm to calculate a climatological cloud mask (or cloud cover probability) from Meteosat satellites is developed. The algorithm shall be applicable for both Meteosat first generation (1983-2005) and Meteosat second generation (2004-present) which significantly differ in their spectral properties. The algorithm linearly aggregates a set of continuous scores instead of the commonly used decision tree approach. The scores are calculated for different channels as well as different spatial and temporal settings. Each score yields a probability for the pixel's cloud cover. The final result, the cloud cover probability, is obtained by combining all available scores taking into account the varying performance of the scores during day and night and over snow. The uncertainty of the final cloud cover estimate is an inherent part of the probability. The algorithm is calibrated using cloud cover measurements from SYNOP stations located on the Meteosat disc. The subsequent validation is done at an independent set of collocated SYNOP/ARSA (Automated Radiosonde Archive) stations. The presentation introduces the applied cloud mask algorithm and presents the results of the validation for both satellite generations. The comparison of the two satellite generations addresses the climatological homogeneity of the future cloud mask climate data record which will be distributed by CM SAF after 2016. Special attention is also drawn to issues like the day-night-bias of

  9. Masking of low-frequency signals by high-frequency, high-level narrow bands of noisea

    PubMed Central

    Patra, Harisadhan; Roup, Christina M.; Feth, Lawrence L.

    2011-01-01

    Low-frequency masking by intense high-frequency noise bands, referred to as remote masking (RM), was the first evidence to challenge energy-detection models of signal detection. Its underlying mechanisms remain unknown. RM was measured in five normal-hearing young-adults at 250, 350, 500, and 700 Hz using equal-power, spectrally matched random-phase noise (RPN) and low-noise noise (LNN) narrowband maskers. RM was also measured using equal-power, two-tone complex (TC2) and eight-tone complex (TC8). Maskers were centered at 3000 Hz with one or two equivalent rectangular bandwidths (ERBs). Masker levels varied from 80 to 95 dB sound pressure level in 5 dB steps. LNN produced negligible masking for all conditions. An increase in bandwidth in RPN yielded greater masking over a wider frequency region. Masking for TC2 was limited to 350 and 700 Hz for one ERB but shifted to only 700 Hz for two ERBs. A spread of masking to 500 and 700 Hz was observed for TC8 when the bandwidth was increased from one to two ERBs. Results suggest that high-frequency noise bands at high levels could generate significant low-frequency masking. It is possible that listeners experience significant RM due to the amplification of various competing noises that might have significant implications for speech perception in noise. PMID:21361445

  10. Feedforward and Feedback Control in Apraxia of Speech: Effects of Noise Masking on Vowel Production

    PubMed Central

    Mailend, Marja-Liisa; Guenther, Frank H.

    2015-01-01

    Purpose This study was designed to test two hypotheses about apraxia of speech (AOS) derived from the Directions Into Velocities of Articulators (DIVA) model (Guenther et al., 2006): the feedforward system deficit hypothesis and the feedback system deficit hypothesis. Method The authors used noise masking to minimize auditory feedback during speech. Six speakers with AOS and aphasia, 4 with aphasia without AOS, and 2 groups of speakers without impairment (younger and older adults) participated. Acoustic measures of vowel contrast, variability, and duration were analyzed. Results Younger, but not older, speakers without impairment showed significantly reduced vowel contrast with noise masking. Relative to older controls, the AOS group showed longer vowel durations overall (regardless of masking condition) and a greater reduction in vowel contrast under masking conditions. There were no significant differences in variability. Three of the 6 speakers with AOS demonstrated the group pattern. Speakers with aphasia without AOS did not differ from controls in contrast, duration, or variability. Conclusion The greater reduction in vowel contrast with masking noise for the AOS group is consistent with the feedforward system deficit hypothesis but not with the feedback system deficit hypothesis; however, effects were small and not present in all individual speakers with AOS. Theoretical implications and alternative interpretations of these findings are discussed. PMID:25565143

  11. Characterizing the dependence of thick-mask edge effects on illumination angle using AIMS images

    NASA Astrophysics Data System (ADS)

    Shanker, Aamod; Sczyrba, Martin; Lange, Falk; Connolly, Brid; Neureuther, Andy; Waller, Laura

    2015-03-01

    Mask topography contributes diffraction-induced phase near edges, affecting the through-focus intensity variation and hence the process window at the wafer. We analyze the impact of edge diffraction on projection printing directly with experiments on an aerial image measurement system (AIMS). We show here that topographic effects change with illumination angle and can be quantified using through-focus intensity measurements. Off- axis incidence influences not just defocus image behavior (as for normal incidence), but also the at-focus intensity at wafer. Moreover, with oblique illumination, mask diffraction varies for left-facing and right-facing sidewalls, the nature of the asymmetry being polarization dependent. The image degradation due the polarization parallel to the sidewall (TE) is seen to be stronger, owing to the interplay of mask topography and pupil filtering in the imaging system. This translates to a CD variation of 2% between the two polarizations, even at focus. A simple thin-mask boundary layer model that treats each sidewall independently is shown to be able to approximate mask topography induced diffraction for both polarizations with 5-10nm wide boundary layers.

  12. Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks

    NASA Astrophysics Data System (ADS)

    Wojdyla, Antoine; Donoghue, Alexander; Benk, Markus P.; Naulleau, Patrick P.; Goldberg, Kenneth A.

    2016-03-01

    EUV lithography uses reflective photomasks to print features on a wafer through the formation of an aerial image. The aerial image is influenced by the mask's substrate and pattern roughness and by photon shot noise, which collectively affect the line-width on wafer prints, with an impact on local critical dimension uniformity (LCDU). We have used SHARP, an actinic mask-imaging microscope, to study line-width roughness (LWR) in aerial images at sub-nanometer resolution. We studied the impact of photon density and the illumination partial coherence on recorded images, and found that at low coherence settings, the line-width roughness is dominated by photon noise, while at high coherence setting, the effect of speckle becomes more prominent, dominating photon noise for exposure levels of 4 photons/nm2 at threshold on the mask size.

  13. Pattern-dependent correction of mask topography effects for alternating phase-shifting masks

    NASA Astrophysics Data System (ADS)

    Ferguson, Richard A.; Wong, Alfred K. K.; Brunner, Timothy A.; Liebmann, Lars W.

    1995-05-01

    Strategies for modifying both mask fabrication processes and design data for alternating phase-shifting masks to account for mask scattering phenomena are explored. Results were derived from the rigorous solution of Maxwell's equations using the EMFlex and TEMPEST programs for an etched-quartz fabrications process. By importing the resulting diffracted orders into VCIMAGE, full vector calculation of the aerial image from mask to wafer was obtained. From the rigorous mask simulations, the 0th and 1st diffracted orders were translated into an effective transmission and phase based on a thin-mask approximation. With this analysis technique, a 0.25 micrometers line-space grating for the baseline etched-quartz process (4X magnification) showed a transmission error of 7.2% and a phase error of 1.6 degree(s). In order to compensate for these errors, etch-back fabrication techniques, in which the quartz was recessed beneath the chrome, were evaluated to determine the extent to which the transmission and phase errors could be reduced. For the dual etch-back process typically in use today, a residual transmission error of approximately 0.5% could not be completely removed, even for etch-back depths greater than 200 nm. Correction of the phase errors was achieved by reducing the reactive-ion etch depth by 2-3 nm. Design manipulation, in which the 180 degree(s) opening was increased in size, required feature-dependent phase errors as large as 1 degree(s) were present.

  14. Mask R&D activities at the Advanced Mask Technology Center

    NASA Astrophysics Data System (ADS)

    Dilger, Markus; Peters, Jan Hendrik

    2004-08-01

    The Advanced Mask Technology Center (AMTC) in Dresden is an equally-owned joint venture of Advanced Micro Devices Inc. (AMD), DuPont Photomasks, Inc. (DPI), and Infineon Technologies AG (Infineon) founded in 2002 to create a world-leading mask R&D center for both DRAM and logic applications. The AMTC's primary focus is research and development of sub-70 nm technologies. While 193 nm lithography will be used for 65 nm design rules and is probable for 45 nm design rules, solutions for sub-45 nm design rules are still being studied. Possible solutions include 193 nm immersion, 157 nm immersion, EUV, and EPL or its variants. The AMTC is actively involved in multiple collaborative projects to develop masks for advanced lithographies. This paper presents a sampling of AMTC's development activities on both conventional and EUV masks. Intensive studies on adequate materials and their properties for the respective technology have been performed with key partners in the field. Masks have been produced and analyzed. New repair processes have been developed for the small structures of future nodes, the printing capabilities have been predicted by AIMS measurements and analyzed with printing experiments at the respective wavelengths. In this talk we will present the latest results of simulations, experiments, handling and tool qualifications performed at the AMTC or with its partners. We will especially focus on our activities for the EUV technology and will present results on material and process development as well as on simulations for soft and hard pellicle induced distortions. For the EUV technology we will present preliminary results from our etching experiment on binary masks. First results on the performance of our new nano-machining RAVE tool will be shown.

  15. Noise masking of S-cone increments and decrements

    PubMed Central

    Wang, Quanhong; Richters, David P.; Eskew, Rhea T.

    2014-01-01

    S-cone increment and decrement detection thresholds were measured in the presence of bipolar, dynamic noise masks. Noise chromaticities were the L-, M-, and S-cone directions, as well as L−M, L+M, and achromatic (L+M+S) directions. Noise contrast power was varied to measure threshold Energy versus Noise (EvN) functions. S+ and S− thresholds were similarly, and weakly, raised by achromatic noise. However, S+ thresholds were much more elevated by S, L+M, L–M, L- and M-cone noises than were S− thresholds, even though the noises consisted of two symmetric chromatic polarities of equal contrast power. A linear cone combination model accounts for the overall pattern of masking of a single test polarity well. L and M cones have opposite signs in their effects upon raising S+ and S− thresholds. The results strongly indicate that the psychophysical mechanisms responsible for S+ and S− detection, presumably based on S-ON and S-OFF pathways, are distinct, unipolar mechanisms, and that they have different spatiotemporal sampling characteristics, or contrast gains, or both. PMID:25391300

  16. Non-Redundant Masking Science on the Gemini Planet Imager

    NASA Astrophysics Data System (ADS)

    Greenbaum, Alexandra; Cheetham, Anthony; Sivaramakrishnan, A.; Pueyo, L.; Wolff, S.; Perrin, M. D.; Ingraham, P.; Thomas, S.; Norris, B.; Tuthill, P.

    2014-01-01

    Non-Redundant Mask Interferometry (NRM) transforms a fully transmissive pupil into an interferometer by masking all but a set of holes that form unique baselines. The interferometric resolution and dynamic range makes the technique suitable for probing potential planet forming regions. So called "transition disks" may or may not have perturbing bodies in the process of changing the disk morphology (cleared gaps, etc.) and require close-in imaging to peer inside disk clearings and spot companions that are several orders of magnitude fainter than the host star. Improvements in contrast for NRM rely on both the wavefront quality as well as the data reduction methods. Image plane modeling of the NRM point-spread function avoids ringing and windowing effects that result in Fourier domain analysis of bad pixel and restricted field of view data. The Gemini Planet Imager (GPI), an extreme adaptive optics system and integral field spectrograph, is equipped with a 10-hole NRM. We present recent results from GPI NRM I&T data using the image plane approach to measure visibilities as an early prediction of performance. We additionally discuss the feasibility of measuring visibility amplitudes from ground-based studies and their implications for NRM science with GPI.

  17. Noise masking of S-cone increments and decrements.

    PubMed

    Wang, Quanhong; Richters, David P; Eskew, Rhea T

    2014-01-01

    S-cone increment and decrement detection thresholds were measured in the presence of bipolar, dynamic noise masks. Noise chromaticities were the L-, M-, and S-cone directions, as well as L-M, L+M, and achromatic (L+M+S) directions. Noise contrast power was varied to measure threshold Energy versus Noise (EvN) functions. S+ and S- thresholds were similarly, and weakly, raised by achromatic noise. However, S+ thresholds were much more elevated by S, L+M, L-M, L- and M-cone noises than were S- thresholds, even though the noises consisted of two symmetric chromatic polarities of equal contrast power. A linear cone combination model accounts for the overall pattern of masking of a single test polarity well. L and M cones have opposite signs in their effects upon raising S+ and S- thresholds. The results strongly indicate that the psychophysical mechanisms responsible for S+ and S- detection, presumably based on S-ON and S-OFF pathways, are distinct, unipolar mechanisms, and that they have different spatiotemporal sampling characteristics, or contrast gains, or both. PMID:25391300

  18. Actinic imaging and evaluation of phase structures on EUV lithography masks

    SciTech Connect

    Mochi, Iacopo; Goldberg, Kenneth; Huh, Sungmin

    2010-09-28

    The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of the object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.

  19. Penetration of diesel exhaust particles through commercially available dust half masks.

    PubMed

    Penconek, Agata; Drążyk, Paulina; Moskal, Arkadiusz

    2013-04-01

    Half masks are certified by the competent, national institutions--National Institute for Occupational Safety and Health (NIOSH) in the USA and the respective European national institutions applying common European regulations. However, certification testing is conducted with particles of NaCl, paraffin oil, or dioctyl phthalate (DOP) and at the constant flow rate, whereas particles commonly found in workplaces may differ in size, shape, and morphology from these particles. Therefore, the aim of this study was to investigate filtration efficiency of commercially available filtering facepiece half masks under the condition of exposure to diesel fumes. In this study, we focused on the particulate phase [diesel exhaust particles (DEP)] of three (petroleum diesel, ecodiesel, and biodiesel) diesel fuel combustion types. Two types of European standard-certified half masks, FFP2 and FFP - Filtering Facepiece, and three types of popular diesel fuels were tested. The study showed that the filtration efficiencies for each examined half mask and for each of diesel exhaust fumes were lower than the minimum filtration efficiency required for the standard test aerosols by the European standards. For FFP2 and FFP3 particulate half masks, standard minimum filtration efficiency is 94 and 99%, respectively, whereas 84-89% of mass of DEP from various fuels were filtered by the tested FFP2 and only 75-86% by the FFP3. The study indicated that DEP is more penetrating for these filters than the standard salt or paraffin oil test aerosols. The study also showed that the most penetrating DEP are probably in the 30- to 300-nm size range, regardless of the fuel type and the half-mask model. Finally, the pressure drops across both half masks during the 80-min tests remained below an acceptable maximum of breathing resistance-regardless of the fuel types. The respiratory system, during 40-min test exposures, may be exposed to 12-16mg of DEP if a FFP2 or FFP3 particulate half mask is used. To

  20. Removable pellicle for lithographic mask protection and handling

    DOEpatents

    Klebanoff, Leonard E.; Rader, Daniel J.; Hector, Scott D.; Nguyen, Khanh B.; Stulen, Richard H.

    2002-01-01

    A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask. Also, the anchor piece and mask are maintained at a higher temperature than the frame member and pellicle which also prevents particles from reaching the patterned mask area by thermophoresis. The pellicle can be positioned over the mask to provide particle protection during mask handling, inspection, and pumpdown, but which can be removed manually or robotically for lithographic use of the mask.