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Sample records for modified laser etching

  1. Excimer Laser Etching

    SciTech Connect

    Boatner, Lynn A; Longmire, Hu Foster; Rouleau, Christopher M; Gray, Allison S

    2008-04-01

    Excimer laser radiation at a wavelength of = 248 nm represents a new etching method for the preparation of metallographic specimens. The method is shown to be particularly effective for enhancing the contrast between different phases in a multiphase metallographic specimen.

  2. Modified photoresist etch mask process for InP channeled substrate lasers

    SciTech Connect

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1989-03-01

    The authors develop a new photoresist etch mask process to etch (001) InP wafers to obtain (111) B-faceted v-grooves for channeled substrate laser applications. They investigate the use of HCl and HF solutions to remove native oxide layers prior to v-groove etching. They also study the relationship between the photoresist mask undercutting and the bath temperature used for native oxide removal. The degree of undercutting in photoresist mask can be reduced about two times by increasing the HF bath temperature from room temperature to 48/sup 0/C during the oxide removal process. They also identify two important factors that control the mask undercutting rates as (i) the thickness of native oxide on InP surface and (ii) the chemical reaction between InP and the oxide removal bath solution.

  3. Laser-driven fusion etching process

    DOEpatents

    Ashby, C.I.H.; Brannon, P.J.; Gerardo, J.B.

    1987-08-25

    The surfaces of solids are etched by a radiation-driven chemical reaction. The process involves exposing a substrate coated with a layer of a reactant material on its surface to radiation, e.g., a laser, to induce localized melting of the substrate which results in the occurrence of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic substrates, e.g., LiNbO/sub 3/, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  4. Laser-driven fusion etching process

    DOEpatents

    Ashby, Carol I. H.; Brannon, Paul J.; Gerardo, James B.

    1989-01-01

    The surfaces of solid ionic substrates are etched by a radiation-driven chemical reaction. The process involves exposing an ionic substrate coated with a layer of a reactant material on its surface to radiation, e.g. a laser, to induce localized melting of the substrate which results in the occurrance of a fusion reaction between the substrate and coating material. The resultant reaction product and excess reactant salt are then removed from the surface of the substrate with a solvent which is relatively inert towards the substrate. The laser-driven chemical etching process is especially suitable for etching ionic salt substrates, e.g., a solid inorganic salt such as LiNbO.sub.3, such as used in electro-optical/acousto-optic devices. It is also suitable for applications wherein the etching process is required to produce an etched ionic substrate having a smooth surface morphology or when a very rapid etching rate is desired.

  5. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    PubMed Central

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P<.05). Furthermore, ALP expression levels of MSLA and LAT surfaces were significantly higher than expression levels of LT surface-adherent cells at 7, 14, and 21 days, respectively (P<.05). However, ALP expression levels between MSLA and LAT surface were equal at 7, 14, and 21 days (P>.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  6. Photoinduced laser etching of a diamond surface

    SciTech Connect

    Kononenko, V V; Komlenok, M S; Pimenov, S M; Konov, V I

    2007-11-30

    Nongraphitising ablation of the surface of a natural diamond single crystal irradiated by nanosecond UV laser pulses is studied experimentally. For laser fluences below the diamond graphitisation threshold, extremely low diamond etching rates (less than 1nm/1000 pulses) are obtained and the term nanoablation is used just for this process. The dependence of the nanoablation rate on the laser fluence is studied for samples irradiated both in air and in oxygen-free atmosphere. The effect of external heating on the nanoablation rate is analysed and a photochemical mechanism is proposed for describing it. (interaction of laser radiation with matter. laser plasma)

  7. Laser etching of polymer masked leadframes

    NASA Astrophysics Data System (ADS)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  8. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  9. Laser etching: A new technology to identify Florida grapefruit

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beam etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allowing for pathogen entry. The long term effects of laser labeling o...

  10. Laser etching of metals in neutral salt solutions

    NASA Astrophysics Data System (ADS)

    Datta, M.; Romankiw, L. T.; Vigliotti, D. R.; von Gutfeld, R. J.

    1987-12-01

    We report new findings that relate to rapid maskless laser etching of steel and stainless steel in neutral solutions of sodium chloride, sodium nitrate, and potassium sulfate. Etch rates have been determined as a function of laser power, laser on-time, and solution concentration. The morphology of laser-etched holes obtained in these solutions was compared with holes obtained in pure water. Results indicate that some controlled melting occurs under certain laser conditions in addition to the metal dissolution process induced by the locally intense heat of the laser beam.

  11. In vitro evaluation of microleakage under orthodontic brackets using two different laser etching, self etching and acid etching methods.

    PubMed

    Hamamci, Nihal; Akkurt, Atilim; Başaran, Güvenç

    2010-11-01

    This study evaluated the microleakage of brackets bonded by four different enamel etching techniques. Forty freshly extracted human premolars were divided randomly into four equal groups and received the following treatment: group 1, acid etching; group 2, self-etching primer (SEP); group 3, erbium:yttrium-aluminum-garnet (Er:YAG) laser etching; and group 4, erbium, chromium:yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching. After photopolymerization, the teeth were kept in distilled water for 1 month and then subjected to 500 thermal cycles. Then, the specimens were sealed with nail varnish, stained with 0.5% basic fuchsin for 24 h, sectioned, and examined under a stereomicroscope. In addition, they were scored for marginal microleakage at the adhesive-enamel and bracket-adhesive interfaces from the incisal and gingival margins. Statistical analyses consisted of the Kruskal-Wallis test and the Mann-Whitney U test with Bonferroni correction. Microleakage occurred between the adhesive-enamel and bracket-adhesive interfaces in all groups. For the adhesive-enamel surface, a significant difference was observed between group 1 and groups 2 (P = 0.011), 3 (P = 0.002), and 4 (P = 0.000) on the gingival side. Overall, significant differences were observed between group 1 and groups 3 (P = 0.003) and 4 (P = 0.000). In dental bonding procedures, acid etching was found to result in the least microleakage. Since etching with a laser decreases the risk of caries and is time-saving, it may serve as an alternative to acid etching. PMID:19562404

  12. Nanostructured porous silicon by laser assisted electrochemical etching

    NASA Astrophysics Data System (ADS)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  13. Analysis of machining characteristics in electrochemical etching using laser masking

    NASA Astrophysics Data System (ADS)

    Shin, Hong Shik; Chung, Do Kwan; Park, Min Soo; Chu, Chong Nam

    2011-12-01

    Electrochemical etching using laser masking (EELM), which is a combination of laser beam irradiation for masking and electrochemical etching, allows the micro fabrication of stainless steel without photolithography technology. The EELM process can produce various micro patterns and multilayered structures. In this study, the machining characteristics of EELM were investigated. Changes in characteristics of recast layer formation and the protective effect of the recast layer according to the laser masking conditions and electrochemical etching conditions were investigated by field emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) and X-ray photoelectron spectroscopy (XPS). The oxidized recast layer with a thickness of 500 nm was verified to yield a superior protective effect during electrochemical etching and good form accuracy. Finally, micro patterns and structures were fabricated by EELM.

  14. Characterization of etched facets for GaN-based lasers

    NASA Astrophysics Data System (ADS)

    Scherer, M.; Schwegler, V.; Seyboth, M.; Eberhard, F.; Kirchner, C.; Kamp, M.; Ulu, G.; Ünlü, M. S.; Gruhler, R.; Hollricher, O.

    2001-09-01

    Dry-etching of laser facets is commonly used for (InAl)GaN/sapphire-based structures since the epitaxial planes of the nitride layers are rotated with respect to the substrate planes making cleaving impractical. To achieve steep and smooth facets by chemically assisted ion beam etching, a 3-layer resist system is developed for patterning. Characterization by scanning electron microscopy and atomic force microscopy shows facets with root-mean-square roughnesses of 7 nm and inclination angles of 2-4°. Optically pumped lasers yield low threshold excitation densities for fully doped separate confinement heterostructure lasers.

  15. High performance surface-emitting lasers with dry etched facets

    NASA Astrophysics Data System (ADS)

    Ou, S. S.; Jansen, M.; Yang, J. J.; Sergant, M.; Mawst, L. J.; Botez, D.; Roth, T. J.; Hess, C.; Tu, C.

    1992-12-01

    The fabrication, performance characteristics, and applications of monolithic in-plane surface-emitting lasers (IPSELs) with dry-etched 45-degree micromirrors are reviewed. Several types of such laser diode structures in both junction-up and junction-down configurations are considered. The performance goals for IPSELs with 45-degree micromirrors are high power and efficiency, high duty cycle and CW operation, good reliability, and high fabrication yields. The proposed approach for achieving these goals includes uniform quantum well material growth and dry etching of the laser micromirrors with tight fabrication tolerances.

  16. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    PubMed Central

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  17. Evaluation of the CO2 laser for porcelain laminate etching

    NASA Astrophysics Data System (ADS)

    Rypel, T. S.; Zakariasen, Kenneth L.

    1994-09-01

    Research has shown that CO2 laser energy can both fuse and etch enamel, the effect being dependent on the exposure parameters utilized. Such energy can also fuse dental porcelains, but it is not known whether porcelain can be etched by CO2 laser. The objective of this study was to evaluate whether CO2 laser energy can be utilized to etch porcelain laminates, an effect necessary for resin bonding. Porcelain laminate disks 10 mm in diameter were prepared. The disks were each numbered and divided into quadrants with a small carbide high speed bur. Six disks were utilized, each quadrant receiving a single laser exposure for a total of 24 exposures. Each exposure was at either 10 or 15 W for .01, .05, or .10 seconds, with a focal spot of either 0.8 or 0.35 mm. This range of exposures includes those exposures which cause enamel etching. Two exposures were made at each combination of exposure parameters. Each disk was prepared for scanning electron microscopy and viewed at 75X to examine the exposure sites. All 24 exposure sites were examined and no definite etching was observed.

  18. Photonic jet to improve the lateral resolution of laser etching

    NASA Astrophysics Data System (ADS)

    Abdurrochman, Andri; Lecler, Sylvain; Fontaine, Joël.; Mermet, Frédéric; Meyrueis, Patrick; Tumbelaka, Bernard Y.; Montgomery, Paul

    2014-05-01

    The techniques applying laser beams or optical systems are limited by the diffraction limit of the optical heads used. We demonstrate theoretically and experimentally that the use of the photonic jet allows an improvement in the optical resolution to achieve smaller etching without reducing the wavelength of the source. The potential of the photonic jet using a nanosecond pulsed near-infrared laser for micro-fabrication is also demonstrated. These lasers are the most common type of laser used in industrial processes because of their price and the fact that well-packaged sources are available. Their typical spatial resolution in laser etching is limited by the spot size of their focus point at around 25-70 μm. This is the reason why a photonic jet, a high spatial concentration onto a half-wavelength spot of a beam that emerges in the vicinity of a dielectric microsphere, is of great interest. In our experiments, micro-scale glass (ns = 1.5) and BaTiO3 spheres (ns = 1.9) have been used to achieve photonic jets. The etching process has been tested on two substrates: silicon wafers, which have a significant absorption at 1064 nm, and glass plates, which have a lower absorption at this wavelength. The smallest marking achieved on silicon has an average diameter of 1.3 μm and despite the low absorption, micrometric etchings have also been achieved on glass using larger microspheres.

  19. LEAN: laser-etched aqua number

    NASA Astrophysics Data System (ADS)

    Schell, Karel J.

    1998-04-01

    A security device on a banknote has to be recognized immediately by the general public and has to enable the general public to establish the genuineness of the banknote. This is the so-called first line of defense. Recently the development of the ability to establish the genuiness has gained momentum and is called 'self authenticating.' Comparing the banknote number with a 'watermark number' can do authenticating. The watermark number is engraved by a laser beam in the paper and is -- as the printed number -- different for each note. Recent progress in the material processing by laser enables the engraving of the individual watermark number for each banknote in line with the production process.

  20. 21 CFR 179.43 - Carbon dioxide laser for etching food.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Carbon dioxide laser for etching food. 179.43... § 179.43 Carbon dioxide laser for etching food. Carbon dioxide laser light may be safely used for... consists of a carbon dioxide laser designed to emit pulsed infrared radiation with a wavelength of...

  1. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    PubMed Central

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  2. Investigation of laser-induced etching of Ti in phosphoric acid

    SciTech Connect

    Nowak, R.J.; Metev, S.M.; Meteva, K.B.; Sepold, G.

    1996-12-31

    Laser-induced chemical etching of Ti in phosphoric acid has been investigated using cw Nd:YAG (1.064 {micro}m) and Argon lasers (514 nm) operating in the fundamental Gaussian mode. Two different regions of etching were observed, which are separated by a characteristic threshold value of the laser power and ascribed to melting of the metal. Below the threshold an exponential dependence of etch rates on laser power suggest a thermally activated etching mechanism. Time-resolved measurements indicate in this region the dissolution of the passivation layer followed by surface etching of the metal grains. After laser illumination an immediate repassivation of the recooled surface stops the etch reaction.

  3. Selective wet chemical etching of metallic thin films designed by laser interference metallurgy (LIMET)

    NASA Astrophysics Data System (ADS)

    Catrin, Rodolphe; Gachot, Carsten; Marchand, Günter; Schmid, Ulrich; Mücklich, Frank

    2009-05-01

    The physical and chemical behaviour of materials is strongly correlated with their microstructure. Therefore, much effort is invested in the advanced microstructural design of metallic thin films. Laser Interference Metallurgy (LIMET) is used to locally tune the grain architecture of metallic thin films from the nanoto the microscale. This means a defined size and orientation of the grains with lateral periodicity, by interfering on the sample surface two or more laser beams of a high power nanosecond pulsed Nd:YAG laser. This technique enables the local nucleation and crystallization of amorphous or nanocrystalline metallic thin films, thus combining nano- and microcrystalline regions ordered in periodic line- or lattice-like arrangements in a composite architecture. After having locally modified the microstructure of e-beam evaporated Pt and Au thin films by laser irradiation a wet chemical etching procedure was induced in hot aqua regia. Doing so, a selective etching is achieved without using conventional lithography. Due to the laser-induced recrystallization in periodic structures, these microcrystalline zones of specific oriented grains show a higher resistance against the wet chemical etchant than the as-deposited, nanocrystalline areas, which are completely removed down to the substrate. Therefore, this procedure may have the potential to be an alternative, low cost approach to conventional lithographic techniques and provides a novel method for a straight-forward patterning of metallic thin films.

  4. Etching of enamel for direct bonding with a thulium fiber laser

    NASA Astrophysics Data System (ADS)

    Kabaş Sarp, Ayşe S.; Gülsoy, Murat

    2011-03-01

    Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

  5. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    PubMed Central

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser

  6. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    PubMed

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  7. Mid-infrared spatial filter fabrication using laser chemical etching

    NASA Astrophysics Data System (ADS)

    Drouet D'Aubigny, Christian Y.; Walker, Christopher K.; Golish, Dathon R.

    2004-10-01

    Feedhorns like those commonly used in radio-telescope and radio communication equipment couple very efficiently (>98%) to the fundamental Gaussian mode (TEM00). High order modes are not propagated through a single-mode hollow metallic waveguides. It follows that a back to back feedhorn design joined with a small length of single-mode waveguide can be used as a very high throughput spatial filter. Laser micro machining provides a mean of scaling successful waveguide and quasi-optical components to far and mid infrared wavelengths. A laser micro machining system optimized for THz and far IR applications has been in operation at Steward Observatory for several years and produced devices designed to operate at λ=60μm. A new laser micromachining system capable of producing mid-infrared devices will soon be operational. These proceedings review metallic hollow waveguide spatial filtering theory, feedhorn designs as well as laser chemical etching and the design of a new high-NA UV laser etcher capable of sub-micron resolution to fabricate spatial filters for use in the mid-infrared.

  8. Nanograss and nanostructure formation on silicon using a modified deep reactive ion etching

    SciTech Connect

    Mehran, M.; Mohajerzadeh, S.; Sanaee, Z.; Abdi, Y.

    2010-05-17

    Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.

  9. Laser-induced etching of titanium by Br2 and CCl3Br at 248 nm

    NASA Astrophysics Data System (ADS)

    Tyndall, George W.; Moylan, Christopher R.

    1990-06-01

    A quartz crystal microbalance (QCM) has been used to study the KrF* excimer laser-induced etching of titanium by bromine-containing compounds. The experiment consists of focusing the pulsed UV laser beam at normal incidence onto the surface of a quartz crystal coated with 1 μm of polycrystalline titanium. The removal of titanium from the surface is monitored in real time by measuring the change in the frequency of the quartz crystal. The dependence of the etch rate on etchant pressure and laser fluence was measured and found to be consistent with a two-step etching mechanism. The initial step in the etching of titanium is reaction between the etchant and the surface to form the etch product between laser pulses. The etch product is subsequently removed from the surface during the laser pulse via a laser-induced thermal desorption process. The maximum etch rate obtained in this work was 6.2 Å-pulse-1, indicating that between two and three atomic layers of Ti can be removed per laser pulse. The energy required for desorption of the etch product is calculated to be 172 kJ-mole-1, which is consistent with the sublimation enthalpy of TiBr2 (168 kJ-mole-1). The proposed product in the etching of titanium by Br2 and CCl3Br is thus TiBr2. In the etching of Ti by Br2, formation of TiBr2 proceeds predominantly through the dissociative chemisorption of Br2. In the case of etching with CCl3Br, TiBr2 is formed via chemisorption of Br atoms produced in the gas-phase photodissociation of CCl3Br.

  10. Laser etching of austenitic stainless steels for micro-structural evaluation

    NASA Astrophysics Data System (ADS)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  11. Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

    SciTech Connect

    Bowers, J.E.; Hemenway, B.R.; Wilt, D.P.

    1985-03-01

    Photoelectrochemical etching of InP is used to etch deep (80 ..mu..m), narrow (20 ..mu..m) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C/sup 3/) lasers. Large numbers of low threshold C/sup 3/ lasers wth very similar cavity lengths were obtained.

  12. Visible luminescence from laser-induced stain- and dry etched silicon

    SciTech Connect

    Dimova-Malinovska, D.; Tzolov, M.; Malinowski, N.

    1996-12-31

    Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power or the energy and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.

  13. High precision laser induced etching of multilayered MoS{sub 2}

    SciTech Connect

    Ko, P. J.; Thu, T. V.; Takahashi, H.; Abderrahmane, A.; Takamura, T.; Sandhu, A.

    2014-02-20

    We demonstrate a method for reducing the thickness of multilayered MoS{sub 2} to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS{sub 2} were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS{sub 2} for atomic scale optical and electronic device applications.

  14. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    PubMed Central

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  15. Laser chemical etching of waveguides and quasi-optical devices

    NASA Astrophysics Data System (ADS)

    Drouet D'Aubigny, Christian Yann Pierre

    2003-11-01

    The terahertz (THz) frequency domain, located at the frontier of radio and light, is the last unexplored region of the electromagnetic spectrum. As technology becomes available, THz systems are finding applications to fields ranging all the way from astronomical and atmospheric remote sensing to space telecommunications, medical imaging, and security. In Astronomy the THz and far infrared (IR) portion of the electromagnetic spectrum (λ = 300 to 10 μm) may hold the answers to countless questions regarding the origin and evolution of the Universe, galaxy, star and planet formation. Over the past decade, advances in telescope and detector technology have for the first time made this regime available to astronomers. Near THz frequencies, metallic hollow waveguide structures become so small, (typically much less than a millimeter), that conventional machining becomes extremely difficult, and in many cases, nearly impossible. Laser induced, micro-chemical etching is a promising new technology that can be used to fabricate three dimensional structures many millimeters across with micrometer accuracy. Laser micromachining of silicon possesses a significant edge over more conventional techniques. It does not require the use of masks and is not confined to crystal planes. A non-contact process, it eliminates tool wear and vibration problems associated with classical milling machines. At the University of Arizona we have constructed the first such laser micromachining system optimized for the fabrication of THz and far IR waveguide and quasi-optical components. The system can machine structures up to 50 mm in diameter, down to a few microns accuracy in a few minutes and with a remarkable surface finish. A variety of THz devices have been fabricated using this technique, their design, fabrication, assembly and theoretical performance is described in the chapters that follow.

  16. Etching conditions for resin-modified glass ionomer cement for orthodontic brackets.

    PubMed

    Valente, Rudolfo M; De Rijk, Waldemar G; Drummond, James L; Evans, Carla A

    2002-05-01

    This study reports the tensile bond strength of orthodontic eyelets (RMO, Inc, Denver, Colo) bonded to human extracted teeth with a resin-modified glass ionomer cement (RMGIC) (Fuji Ortho LC, GC America, Alsip, Ill) and various acid etchants (Etch-37 and All-Etch, Bisco, Schaumburg, Ill; Ultra Etch, 3M Unitek, St Paul, Minn) for enamel preparation before bonding. The enamel etch conditions were as follows: 37% phosphoric acid with silica; 37% phosphoric acid, silica-free; 10% phosphoric acid, silica-free; 10% polyacrylic acid; and unetched enamel. Bond strength was measured by pulling in tension on the eyelet with a 0.018-in steel wire perpendicular to the enamel surface with a testing machine (Instron model 1125, Canton, Mass) at a speed of 2 mm/min. A light-cured resin cement (Transbond XT, 3M Unitek, Monrovia, Calif) applied to enamel etched with 37% phosphoric acid containing silica served as a control. Each group included 30 specimens. The Weibull distribution (m) was used for statistical analysis with a 90% CI. The different etchants used with RMGIC did not affect tensile bond strength. The resin cement group had the highest tensile strength. Significantly lower bond strengths were observed when glass ionomer cement was used to bond orthodontic attachments to nonetched teeth. However, unlike resin cement, RMGIC can bond effectively to etched teeth in a moist environment without an additional bonding agent. PMID:12045770

  17. Etching of fused silica and glass with excimer laser at 351 nm

    NASA Astrophysics Data System (ADS)

    Zimmer, K.; Braun, A.; Böhme, R.

    2003-03-01

    The etching of solid surfaces at the interface to liquids is a new promising method for micro-machining of transparent materials. To extend the method to additional materials the pulsed radiation of a XeF-excimer laser (351 nm) was used for etching different types of glass (Corning Inc.: Pyrex, 7059 and Schott Group: D263, AF45) and fused silica for comparison. The etch rates of the investigated materials increase almost linear at low laser fluences. Threshold fluences for glass as low as 0.5 J/cm 2 and etch rates from 6 to 10 nm per pulse at 1 J/cm 2 have been determined. The etch rate and the threshold fluence depend also on the used liquid, consisting of a solvent (acetone, toluene) and a certain concentration of dissolved pyrene, but only little on the glass type. Due to the low etch rate typically very smooth surfaces are achieved. The surface roughness measured by AFM on Corning 7059-glass at an etch depth of 3.7 μm is as low as 4 nm. Contrary to the other glasses the surface roughness of Pyrex is much higher and dominated by typical arbitrary etch pits with micron dimensions. Comparing the etching of fused silica at a wavelength of 248 and 351 nm the used solution influences both the etch threshold and the etch rate. In accordance to earlier investigations at 248 nm also XeF-laser etching at the interface to an absorbing liquid results in a good surface quality, well defined patterns and almost no debris deposition. Thus, this technique is a good candidate for precise micro-machining applications.

  18. Glass etching initiated by excimer laser photolysis of CF/sub 2/Br/sub 2/

    SciTech Connect

    Brannon, J.H.

    1986-04-24

    KrF and ArF excimer laser irradiation of glass surfaces immersed in gaseous CF/sub 2/Br/sub 2/ is found to induce etching. The etch mechanism is considered to be nonthermal on the basis of the small value of the glass absorption coefficent and wavelength variable etching experiments. The etch rate dependence on surface fluence is presented for three pressures. SEM photos reveal a rough surface morphology in the etched region that apparently is not a chemical effect but results solely from the laser irradiation. Photochemical and spectroscopic analysis of the irradiated gas provides evidence for CF/sub 2/ and CF/sub 2/Br as being major photolysis products. C/sub 2/F/sub 4/ was also found to cause etching at 248 and 193 nm. This is evidence that CF/sub 2/, resulting from C/sub 2/F/sub 4/ photolysis, is alone capable of initiating glass etching in the presence of laser light. The paper concludes by discussing the observed inability of the CF/sub 3/ releasing parent gases CF/sub 3/Br and CF/sub 3/I to significantly etch glass when irradiated in their appropriate absorption bands. 31 references, 9 figures, 1 table.

  19. Modeling the Losses of Dissolved CO2 from Laser-Etched Champagne Glasses.

    PubMed

    Liger-Belair, Gérard

    2016-04-21

    Under standard champagne tasting conditions, the complex interplay between the level of dissolved CO2 found in champagne, its temperature, the glass shape, and the bubbling rate definitely impacts champagne tasting by modifying the neuro-physicochemical mechanisms responsible for aroma release and flavor perception. On the basis of theoretical principles combining heterogeneous bubble nucleation, ascending bubble dynamics, and mass transfer equations, a global model is proposed, depending on various parameters of both the wine and the glass itself, which quantitatively provides the progressive losses of dissolved CO2 from laser-etched champagne glasses. The question of champagne temperature was closely examined, and its role on the modeled losses of dissolved CO2 was corroborated by a set of experimental data. PMID:27031022

  20. Open tubular capillary electrochromatography migration behavior of enkephalins in etched chemically modified fused silica capillaries.

    PubMed

    Pesek, Joseph J; Matyska, Maria T; Velpula, Sunandini

    2006-09-01

    Fused silica capillaries for use in electrophoretic analyses are etched with ammonium bifluoride in the presence of a second inorganic salt (CuCl(2), CrCl(3), NaNO(3), or (NH(4))(2)CO(3)). The effects of the presence of these inorganic components in the surface matrix on the electromigration behavior of enkephalins are evaluated. Resolution, efficiency and peak shape are used to compare the various columns. In some cases the etched surface is then modified by the addition of an octadecyl moiety using a silanization/hydrosilation procedure. The surface properties of the etched capillaries can also be evaluated by electroosmotic flow measurements. RSDs of migration times under identical experimental conditions were <1%. PMID:16720028

  1. Microtensile bond strength of a resin-based fissure sealant to Er,Cr:YSGG laser-etched primary enamel.

    PubMed

    Sungurtekin-Ekci, Elif; Oztas, Nurhan

    2016-05-01

    The aim of this study was to evaluate the effect of Er,Cr:YSGG laser pre-treatment alone, or associated with acid-etching, on the microtensile bond strength of a resin-based fissure sealant to primary enamel. Twenty-five human primary molars were randomly divided into five groups including (1) 35 % acid etching, (2) 2.5-W laser etching, (3) 3.5-W laser etching, (4) 2.5-W laser etching + acid etching, and (5) 3.5-W laser etching + acid etching. Er,Cr:YSGG laser was used at a wavelength of 2.780 nm and pulse duration of 140-200 μs with a repetition rate of 20 Hz. Following surface pre-treatment, the fissure sealant (ClinPro™, 3M Dental Products) was applied. Each tooth was sectioned and subjected to microtensile testing. Kruskal-Wallis test was used for statistical analysis. The level of significance was set at p < 0.05. The microtensile bond strength values of group 1 were significantly higher than those of group 2, while no statistically significant difference was detected between groups 1, 3, 4, and 5. It was concluded that 3.5-W laser etching produced results comparable to conventional acid etching technique, whereas 2.5-W laser etching was not able to yield adequate bonding performance. PMID:25847685

  2. Reaction ion etching process for improving laser damage resistance of fused silica optical surface.

    PubMed

    Sun, Laixi; Liu, Hongjie; Huang, Jin; Ye, Xin; Xia, Handing; Li, Qingzhi; Jiang, Xiaodong; Wu, Weidong; Yang, Liming; Zheng, Wanguo

    2016-01-11

    Laser induced damage of fused silica optics occurs primarily on optical surface or subsurface resulting from various defects produced during polishing/grinding process. Many new kinds of surface treatment processes are explored to remove or control the defects on fused silica surface. In this study, we report a new application of reaction ion etching (RIE)-based surface treatment process for manufacture of high quality fused silica optics. The influence of RIE processes on laser damage resistance as a function of etching depth and the evolution of typical defects which are associated with laser damage performance were investigated. The results show that the impurity element defects and subsurface damage on the samples surface were efficiently removed and prevented. Pure silica surface with relatively single-stable stoichiometry and low carbon atomic concentration was created during the etching. The laser damage resistance of the etched samples increased dramatically. The increase of roughness and ODC point defect with deeper etching are believed to be the main factors to limit further increase of the damage resistance of fused silica. The study is expected to contribute to the development of fused silica optics with high resistance to laser induced degradation in the future. PMID:26832251

  3. Effect of liquid environment on laser-induced backside wet etching of fused silica

    NASA Astrophysics Data System (ADS)

    Lee, Taehwa; Jang, Deoksuk; Ahn, Daehwan; Kim, Dongsik

    2010-02-01

    In laser-induced backside wet etching (LIBWE), the liquid absorbent indirectly heats the transparent material, causing explosive phase change and cavitation. Accordingly, the hydrodynamics of the absorbing liquid, including the size of the liquid chamber, is strongly related to the ablation process. Because the hydrodynamics is dependent on the elastic deformation of the sample, the sample thickness also affects the performance of LIBWE. In this work, experimental analyses were performed to elucidate the hydrodynamics in LIBWE and the effect on the etch rate by varying the liquid chamber size and sample thickness. A KrF excimer laser was used to ablate fused silica samples in toluene and the etch rate was quantified using a scanning profilometer. Laser flash shadowgraphy and photodeflection probing techniques were employed for in situ measurement of the laser-induced hydrodynamics and displacement of the sample, respectively, with a time resolution of approximately nanoseconds. To directly observe the effect of increased liquid pressure on LIBWE, the liquid pressure on the etching spot was locally increased by an external shock wave and the etch results are examined. This study confirms that the photomechanical effects from the laser-induced bubble plays a key role in the LIBWE process, revealing a linear relationship between the etch rate the applied recoil momentum. However, the dependence of the etch rate on the chamber size and sample thickness could not be explained by the change in recoil momentum, i.e., by the bubble pressure. Instead, transient deformation of the sample by the pressure impact was estimated to be mainly responsible for the dependence.

  4. Time-resolved transmission study of fused silica during laser-induced backside dry etching

    NASA Astrophysics Data System (ADS)

    Smausz, T.; Zalatnai, Z.; Papdi, B.; Csákó, T.; Bor, Zs.; Hopp, B.

    2009-03-01

    Laser-induced backside dry etching (LIBDE) is a promising technique for micro- and nanomachining of transparent materials. Although several experiments have already proved the suitability and effectiveness of the technique, there are several open questions concerning the etching mechanism and the concomitant processes. In this paper time-resolved light transmission investigations of etching process of fused silica are presented. 125 nm thick silver coating was irradiated through the carrying 1 mm thick fused silica plate by single pulses of a nanosecond KrF excimer laser. The applied fluences were 0.38, 0.71 and 1 J/cm 2. During the etching process the irradiated spots were illuminated by an electronically delayed nitrogen laser pumped dye laser. The delay between the pump and probe pulses was varied in the range of 0 ns and 20 μs. It was found that the transmitted probe beam intensity strongly depends on the applied delays and fluences. Scanning electron microscopy and energy dispersive X-ray spectrometry of the etched surface showed the existence of silver droplets and fragments on the illuminated surfaces and silver atoms built into the treated surface layer influencing the transmission behavior of the studied samples.

  5. Improving UV laser damage threshold of fused silica optics by wet chemical etching technique

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao; Yang, Wei

    2015-07-01

    Fused silica is widely used in high-power laser systems because of its good optical performance and mechanical properties. However, laser damage initiation and growth induced by 355 nm laser illumination in optical elements have become a bottleneck in the development of high energy laser system. In order to improve the laser-induced damage threshold (LIDT), the fused silica optics were treated by two types of HF-based etchants: 1.7%wt. HF acid and buffer oxide etchant (BOE: the mixture of 0.4%wt. HF and 12%wt. NH4F), respectively, for varied etching time. Damage testing shows that both the etchants increase the damage threshold at a certain depth of material removal, but further removal of material lowers the LIDT markedly. The etching rates of both etchants keep steady in our processing procedure, ~58 μg/min and ~85 μg/min, respectively. The micro-surface roughness (RMS and PV) increases as etching time extends. The hardness (H) and Young's modulus (E) of the fused silica etched for diverse time, measured by nano-indenter, show no solid evidence that LIDT can be related to hardness or Young's modulus.

  6. Laser surface pretreatment of 100Cr6 bearing steel - Hardening effects and white etching zones

    NASA Astrophysics Data System (ADS)

    Buling, Anna; Sändker, Hendrik; Stollenwerk, Jochen; Krupp, Ulrich; Hamann-Steinmeier, Angela

    2016-08-01

    In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1-1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  7. Effects of wet etch processing on laser-induced damage of fused silica surfaces

    SciTech Connect

    Battersby, C.L.; Kozlowski, M.R.; Sheehan, L.M.

    1998-12-22

    Laser-induced damage of transparent fused silica optical components by 355 nm illumination occurs primarily at surface defects produced during the grinding and polishing processes. These defects can either be surface defects or sub-surface damage.Wet etch processing in a buffered hydrogen fluoride (HF) solution has been examined as a tool for characterizing such defects. A study was conducted to understand the effects of etch depth on the damage threshold of fused silica substrates. The study used a 355 nm, 7.5 ns, 10 Hz Nd:YAG laser to damage test fused silica optics through various wet etch processing steps. Inspection of the surface quality was performed with Nomarski microscopy and Total Internal Reflection Microscopy. The damage test data and inspection results were correlated with polishing process specifics. The results show that a wet etch exposes subsurface damage while maintaining or improving the laser damage performance. The benefits of a wet etch must be evaluated for each polishing process.

  8. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    SciTech Connect

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  9. Separation of ions using polyelectrolyte-modified nanoporous track-etched membranes.

    PubMed

    Armstrong, Jason A; Bernal, Edxon Eduardo Licón; Yaroshchuk, Andriy; Bruening, Merlin L

    2013-08-13

    Selective ion exclusion from charged nanopores in track-etched membranes allows separation of ions with different charges or mobilities. This study examines pressure-driven transport of dissolved ions through track-etched membranes modified by adsorption of poly(styrene sulfonate) (PSS)/protonated poly(allylamine) (PAH) films. For nominal 30 nm pores modified with a single layer of PSS, Br(-)/SO4(2-) selectivities are ∼3.4 with SO4(2-) rejections around 85% due to selective electrostatic exclusion of the divalent anion from the negatively charged pore. Corresponding membranes containing an adsorbed PSS/PAH bilayer are positively charged and exhibit average K(+)/Mg(2+) selectivities >10 at 8 mM ionic strength, and Mg(2+) rejections are >97.5% at ionic strengths <5 mM. The high rejection of Mg(2+) compared to SO4(2-) likely results from both a smaller pore size after deposition of the PAH layer and higher surface charge because of Mg(2+) adsorption. Simultaneous modeling of K(+) and Mg(2+) rejections using the nonlinearized Poisson-Boltzmann equation gives an average modified pore diameter of 8.4 ± 2.1 nm, which does not vary significantly with ionic strength. This diameter is smaller than that calculated from hydraulic permeabilities and estimated pore densities, suggesting that narrow regions near the pore entrance control ion transport. In addition to simple electrostatic exclusion, streaming potentials lead to differing rejections of Br(-) and acetate in PSS/PAH-modified pores, and of Li(+) and Cs(+) in PSS-modified pores. For these cases, electrical migration of ions toward the feed solution results in higher rejection of the more mobile ion. PMID:23902372

  10. Deep-Etched Photonic Crystal Laser Structure of InP-Based Asymmetric Multiple Quantum Wells

    NASA Astrophysics Data System (ADS)

    Bai, Jiun-Cheng; Chen, Chun-Yang; Chiu, Chien-Liang; Hsin, Jin-Yuan; Lin, Eu-Ying; Lay, Tsong-Sheng

    2009-06-01

    A photonic crystal (PhC) laser structure was fabricated on an InP substrate. The wafer consists of a p-i-n laser epitaxial structure using asymmetric InGaAs/InGaAlAs multiple quantum wells as the active layer. The epistructure has a broadband electroluminescence spectrum centered at an optical wavelength (λ) = 1538 nm with a 3 dB bandwidth = 115 nm. The deep-etched PhC laser structure was achieved by inductively coupled plasma dry etching using a Cl2 + SiCl4 + CH4 mixture. The room-temperature optical spectrum of the PhC laser structure shows three sharp emission peaks at λ= 1505, 1535, and 1551 nm, which correspond to the resonant modes of the PhC.

  11. 21 CFR 179.43 - Carbon dioxide laser for etching food.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Carbon dioxide laser for etching food. 179.43 Section 179.43 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION (CONTINUED) IRRADIATION IN THE PRODUCTION, PROCESSING AND HANDLING OF FOOD Radiation and Radiation Sources §...

  12. Fabrication of dry etched and subsequently passivated laser facets in GaAs/AlGaAs

    SciTech Connect

    Deichsel, Eckard; Franz, Gerhard

    2004-09-01

    The aging behavior of edge emitting laser diodes based on GaAs/AlGaAs is investigated by comparing devices with facets that are alternatively cleaved or dry etched and consecutively treated with H{sub 2}S. In this work we demonstrate that an in situ exposure to H{sub 2}S gas is not sufficient to prevent ageing but an additional plasma treatment is rather required to obtain comparable ageing results to lasers with cleaved facets.

  13. CO2 laser cutting and ablative etching for the fabrication of paper-based devices

    NASA Astrophysics Data System (ADS)

    Spicar-Mihalic, P.; Toley, B.; Houghtaling, J.; Liang, T.; Yager, P.; Fu, E.

    2013-06-01

    We describe a method for fabricating paper-based microfluidic devices using a commercially available CO2 laser system. The method is versatile and allows for controlled through-cutting and ablative etching of nitrocellulose substrates. In addition, the laser system can cut a variety of components that are useful in the fabrication of paper-based devices, including cellulose wicking pads, glass fiber source pads and Mylar-based substrates for the device housing.

  14. Use of inorganic salts during the etching process in the fabrication of chemically modified capillaries for open tubular electrochromatography.

    PubMed

    Pesek, Joseph J; Matyska, Maria T; Velpula, Sunandini

    2005-05-01

    Capillaries for use in electrophoretic analyses are etched with ammonium bifluoride and in some cases a second inorganic salt is included in the process. The effects of the presence of these inorganic components in the surface matrix on the electromigration of heterocyclic aromatic amines and enkephalins are evaluated. Resolution, efficiency, and peak shape are used to compare the various columns. In one instance, the etched surface is then modified by the addition of an octadecyl moiety using a silanization/hydrosilation procedure. The surface properties of the various etched capillaries are also compared by electroosmotic flow measurements. PMID:15938182

  15. Tuning etch selectivity of fused silica irradiated by femtosecond laser pulses by controlling polarization of the writing pulses

    SciTech Connect

    Yu Xiaoming; Zeng Bin; Liao Yang; He Fei; Cheng Ya; Xu Zhizhan; Sugioka, Koji; Midorikawa, Katsumi

    2011-03-01

    We report on experimental study on chemical etch selectivity of fused silica irradiated by femtosecond laser with either linear or circular polarization in a wide range of pulse energies. The relationships between the etch rates and pulse energies are obtained for different polarization states, which can be divided into three different regions. A drop of the etch rate for high pulse energy region is observed and the underlying mechanism is discussed. The advantage of using circularly polarized laser is justified owing to its unique capability of providing a 3D isotropic etch rate.

  16. Improve the laser damage resistance of fused silica by wet surface cleaning and optimized HF etch process

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Rao, Huanle; Fu, Shaojun

    2013-07-01

    Fabrication-induced metal contaminations and subsurface damage are generally identified as the laser damage initiators that are responsible for the laser induced damage in fused silica. In this paper, the removal of those two initiators are realized by two methods: wet chemical surface cleaning and optimized HF-based etch process. Two kinds of chemical leaching are used to removing the Ce and other metal impurities respectively. In order prevent the redeposition of the reactive byproducts during HF etch process, we optimized the traditional HF etch process in two ways: absence of NH4F in etch solution and presence of megasonic and ultrasonic agitation during and after etch respectively. And laser damage tests show that these two treatments greatly improve the laser damage resistance of fused silica.

  17. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    NASA Astrophysics Data System (ADS)

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in µ-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  18. Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

    NASA Astrophysics Data System (ADS)

    Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-02-01

    This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

  19. Shear bond strength of self-etching adhesive systems to Er:YAG-laser-prepared dentin.

    PubMed

    Brulat, Nathalie; Rocca, Jean-Paul; Leforestier, Eric; Fiorucci, Gilbert; Nammour, Samir; Bertrand, Marie-France

    2009-01-01

    This study was conducted to compare the shear bond strengths of composite resin bonded to Er:YAG laser or bur-prepared dentin surfaces using three self-etching adhesive systems. The occlusal surfaces of 120 human third molars were ground flat to expose dentin. The dentin was prepared using either a carbide bur or an Er:YAG laser at 350 mJ/pulse and 10 Hz (fluence, 44.5 J/cm(2)). Three different self-etching adhesive systems were applied: iBond, Xeno III and Clearfil SE Bond. Rods of composite resin were bonded to dentin surfaces and shear bond tests were carried out. Both dentin surfaces after debonding and resin rods were observed using a scanning electron microscope. When the Xeno III was used, no difference was observed on shear bond strength values when bur and Er:YAG laser were compared. When using iBond and Clearfil SE Bond, bond strength values measured on Er:YAG-laser-prepared surfaces were lower than those observed on bur-prepared surfaces. The absence of smear layer formation during the preparation of the dentin by the Er:YAG laser did not improve the adhesion values of self-etching adhesive systems. PMID:18034284

  20. Influence of the confinement on laser-induced dry etching at the rear side of fused silica

    NASA Astrophysics Data System (ADS)

    Pan, Yunxiang; Ehrhardt, Martin; Lorenz, Pierre; Han, Bing; Hopp, Bela; Vass, Csaba; Ni, Xiaowu; Zimmer, Klaus

    2016-04-01

    Laser-induced etching at the rear side of transparent material enables high-quality machining results. However, the mechanism is still not completely recognized which would allow further optimization. Therefore, multi-pulsed laser-induced backside dry etching with different thick photoresist films was studied experimentally for air (MP-LIBDE) and water confinements (cMP-LIBDE). The water confinement causes differences in photoresist ablation morphology and etching rate in dependence on laser fluence, film thickness and pulse number. Owing to the water confinement, the extent of photoresist film spallation and the etching rate slope difference in low and high fluence ranges are reduced. In particular, the etching rate of cMP-LIBDE keeps constant with different film thicknesses in contrast to MP-LIBDE. Two effects that are related to the water confinement, mechanical confinement and heat transfer alterations, are analysed and discussed in relation to the differences between MP-LIBDE and cMP-LIBDE.

  1. Atomic layer deposition modified track-etched conical nanochannels for protein sensing.

    PubMed

    Wang, Ceming; Fu, Qibin; Wang, Xinwei; Kong, Delin; Sheng, Qian; Wang, Yugang; Chen, Qiang; Xue, Jianming

    2015-08-18

    Nanopore-based devices have recently become popular tools to detect biomolecules at the single-molecule level. Unlike the long-chain nucleic acids, protein molecules are still quite challenging to detect, since the protein molecules are much smaller in size and usually travel too fast through the nanopore with poor signal-to-noise ratio of the induced transport signals. In this work, we demonstrate a new type of nanopore device based on atomic layer deposition (ALD) Al2O3 modified track-etched conical nanochannels for protein sensing. These devices show very promising properties of high protein (bovine serum albumin) capture rate with well time-resolved transport signals and excellent signal-to-noise ratio for the transport events. Also, a special mechanism involving transient process of ion redistribution inside the nanochannel is proposed to explain the unusual biphasic waveshapes of the current change induced by the protein transport. PMID:26202979

  2. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    NASA Astrophysics Data System (ADS)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  3. Effects of heating by steam autoclaving and Er:YAG laser etching on dentin components.

    PubMed

    Soares, Luís Eduardo S; Brugnera, Aldo; Zanin, Fátima A A; Santo, Ana Maria E; Martin, Airton A

    2011-09-01

    The simultaneous need for infection-control protocols in sample preparations and for safe laser irradiation parameters prompted this study about the effects of heat produced by both sample sterilization and laser etching on dentin components. The dentin was exposed on 30 bovine incisors, and then divided into two main groups: autoclaved (group A) or thymol treatment (group B). The surface of the dentin was schematically divided into four areas, with each one corresponding to a treatment subgroup. The specimens were either etched with phosphoric acid (control-CG) or irradiated with Er:YAG laser (subgroups: I-80 mJ, II-120 mJ, and III-180 mJ). Elemental distribution maps were done by energy-dispersive X-ray fluorescence (μ-EDXRF) on each treatment area. The dentin surface in depth was exposed and line-scan maps were performed. The B_CG treatment produced the best distribution of calcium (Ca) and phosphorus (P) content throughout the dentin surface. Er:YAG laser etching produced irregular patterns of elemental distribution in the dentin. Laser energies of 120 and 180 mJ produced the highest maximum calcium values. The Er:YAG laser energy of 180 mJ produced a localized increase in Ca and P content on the superficial layer of the dentin (∼ 0-0.10 mm). The autoclaving treatment of samples in experiments is not recommended since it produced damaging effects on dentin components. Er:YAG laser irradiation produced a heterogeneous Ca and P distribution throughout the dentin surface with areas of increased Ca concentration, and this may affect clinically the permeability, solubility, or adhesive characteristics of dental hard tissues with restorative procedures. PMID:20625787

  4. Crackless linear through-wafer etching of Pyrex glass using liquid-assisted CO2 laser processing

    NASA Astrophysics Data System (ADS)

    Chung, C. K.; Sung, Y. C.; Huang, G. R.; Hsiao, E. J.; Lin, W. H.; Lin, S. L.

    2009-03-01

    Pyrex glass etching is an important technology for the microfluid application to lab-on-a-chip devices, but suffers from very low etching rate and mask-requiring process in conventional HF/BOE wet or plasma dry etching as well as thermal induced crack surface by CO2 laser processing. In this paper, we applied the liquid-assisted laser processing (LALP) method for linear through-wafer deep etching of Pyrex glass without mask materials to obtain a crackless surface at very fast etching rates up to 25 μm/s for a 20 mm long trench. The effect of laser scanning rate and water depth on the etching of the 500 μm thick Pyrex glass immersed in liquid water was investigated. The smooth surface without cracks can be achieved together with the much reduced height of bulge via an appropriate parameter control. A mechanism of thermal stress reduction in water and shear-force-enhanced debris removal is discussed. The quality improvement of glass etching using LALP is due to the cooling effect of the water to reduce the temperature gradient for a crackless surface and natural convection during etching to carry away the debris for diminishing bulge formation.

  5. Improvement of enamel bond strengths for conventional and resin-modified glass ionomers: acid-etching vs. conditioning*

    PubMed Central

    Zhang, Ling; Tang, Tian; Zhang, Zhen-liang; Liang, Bing; Wang, Xiao-miao; Fu, Bai-ping

    2013-01-01

    Objective: This study deals with the effect of phosphoric acid etching and conditioning on enamel micro-tensile bond strengths (μTBSs) of conventional and resin-modified glass ionomer cements (GICs/RMGICs). Methods: Forty-eight bovine incisors were prepared into rectangular blocks. Highly-polished labial enamel surfaces were either acid-etched, conditioned with liquids of cements, or not further treated (control). Subsequently, two matching pre-treated enamel surfaces were cemented together with one of four cements [two GICs: Fuji I (GC), Ketac Cem Easymix (3M ESPE); two RMGICs: Fuji Plus (GC), RelyX Luting (3M ESPE)] in preparation for μTBS tests. Pre-treated enamel surfaces and cement-enamel interfaces were analyzed by scanning electron microscopy (SEM). Results: Phosphoric acid etching significantly increased the enamel μTBS of GICs/RMGICs. Conditioning with the liquids of the cements produced significantly weaker or equivalent enamel μTBS compared to the control. Regardless of etching, RMGICs yielded stronger enamel μTBS than GICs. A visible hybrid layer was found at certain enamel-cement interfaces of the etched enamels. Conclusions: Phosphoric acid etching significantly increased the enamel μTBSs of GICs/RMGICs. Phosphoric acid etching should be recommended to etch the enamel margins before the cementation of the prostheses such as inlays and onlays, using GICs/RMGICs to improve the bond strengths. RMGICs provided stronger enamel bond strength than GICs and conditioning did not increase enamel bond strength. PMID:24190447

  6. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  7. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOEpatents

    Copley, Stephen M.; Tao, Hongyi; Todd-Copley, Judith A.

    1991-01-01

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  8. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    PubMed Central

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  9. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    PubMed

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  10. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    PubMed Central

    Hoshing, Upendra A; Patil, Suvarna; Medha, Ashish; Bandekar, Siddhesh Dattatray

    2014-01-01

    Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B). In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M). In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA) operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M) was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply) was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa) was significantly higher (P < 0.01) than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa). Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching. PMID:25125842

  11. A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

    NASA Astrophysics Data System (ADS)

    Li, Zhongda; Chow, T. Paul

    2013-08-01

    We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

  12. Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

    NASA Astrophysics Data System (ADS)

    Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-10-01

    We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

  13. Laser-induced gas plasma etching of fused silica under ambient conditions

    NASA Astrophysics Data System (ADS)

    Elhadj, Selim; Guss, Gabe; Matthews, Manyalibo J.; Bass, Isaac

    2012-11-01

    Laser machining of optics to mitigate surface defects has greatly enhanced the ability to process large optics such as those found in fusion-class lasers. Recently, the use of assist reactive gases has shown promise in enhancing manifold etching rates relative to ambient conditions for CW-laser exposures. However, these methods still require significant heating of the substrate that induce residual stress, redeposit coverage, material flow, and compromise the final surface finish and damage threshold. While very reactive fluorinated gases are capable to reduce treatment temperatures even further, they are also inherently toxic and not readily transferable to large processing facilities. In this report, we look at whether a short-lived gas plasma could provide the safe and effective etchant sought, while still reducing the thermal load on the surface. We test this approach using a YAG laserinduced gas plasma to act as a source of the etchant for fused silica, a common optical material. The configuration and orientation of the beam and optical apparatus with respect to the surface was critical in preventing surface damage while etching the surface. Results with N2 and air gas plasmas are shown, along with a description of the various experimental implementations attempted.

  14. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    NASA Astrophysics Data System (ADS)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (<1° departure) and smooth (2.0 nm root mean square line-edge roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ∼60 nm min‑1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  15. Laser Gyro Temperature Compensation Using Modified RBFNN

    PubMed Central

    Ding, Jicheng; Zhang, Jian; Huang, Weiquan; Chen, Shuai

    2014-01-01

    To overcome the effect of temperature on laser gyro zero bias and to stabilize the laser gyro output, this study proposes a modified radial basis function neural network (RBFNN) based on a Kohonen network and an orthogonal least squares (OLS) algorithm. The modified method, which combines the pattern classification capability of the Kohonen network and the optimal choice capacity of OLS, avoids the random selection of RBFNN centers and improves the compensation accuracy of the RBFNN. It can quickly and accurately identify the effect of temperature on laser gyro zero bias. A number of comparable identification and compensation tests on a variety of temperature-changing situations are completed using the multiple linear regression (MLR), RBFNN and modified RBFNN methods. The test results based on several sets of gyro output in constant and changing temperature conditions demonstrate that the proposed method is able to overcome the effect of randomly selected RBFNN centers. The running time of the method is about 60 s shorter than that of traditional RBFNN under the same test conditions, which suggests that the calculations are reduced. Meanwhile, the compensated gyro output accuracy using the modified method is about 7.0 × 10−4 °/h; comparatively, the traditional RBFNN is about 9.0 × 10−4 °/h and the MLR is about 1.4 × 10−3 °/h. PMID:25302814

  16. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  17. Oxide etch dusty plasma studies in the GEC reference cell using dynamic laser light scattering techniques

    SciTech Connect

    Anderson, H.M.; Radovanov, S.

    1995-12-31

    Particulate generation has been studied during reactive on etching (RIE) of oxide wafers in CF{sub 4}/CHF{sub 3} plasmas using the GEC Reference Cell. Under certain discharge process conditions, copious amounts of submicron particles form due to plasma interaction with the oxide substrate. Particles were observed in situ by laser light scattering (LLS) and dynamic laser light scattering (DLSS). DLLS can be used to determine information about particle size, motion, and growth dynamics. DLSS measurements show process-induced dust particles confined in an electrostatic trap exhibit low-frequency oscillatory motion consistent with charge density wave (CDW) motion. These results are also consistent with the plasma dust particles forming a strongly coupled Coulomb liquid phase.

  18. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process.

    PubMed

    Bian, Hao; Yang, Qing; Chen, Feng; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. PMID:23623098

  19. Oxide Etch Behavior in an Inductively Coupled C4F8 Discharge Characterized by Diode Laser Spectroscopy.

    NASA Astrophysics Data System (ADS)

    Anderson, Harold; Barela, Marcus; Courtin, Geoff; Waters, Karla

    2001-10-01

    This study reports on oxide and photoresist etch characteristics in an inductively coupled GEC Reference Cell as a function of reactor source power, bias power and pressure using C4F8. Diode laser absorption spectroscopy (DLAS) has shown that C4F8 is largely dissociated to form C2F4, CF2 and CF in the discharge. Over an oxide surface, CF2 and CF are consumed in the oxide etch process, but only when the bias power is sufficient to keep the oxide surface clean through energetic ion bombardment. For C4F8, this transition occurs at 60 eV (75 W bias power) in the GEC Cell. At higher bias powers (125 W) where oxide etching is fast ( 600 nm/min.), CF2 appears to be the key radical for the etch process since 50 percent (2.7-3.0 mTorr in a 15 mTorr C4F8 discharge) is consumed. These values were obtained by comparing the CF2 concentrations over non-reactive wafer surfaces versus blanket oxide wafer surfaces undergoing etching. CF is shown to display a similar trend, but its concentration is an order of magnitude less than CF2, and consequently cannot account on a mass basis for the amount of reactants necessary to balance the amount of etch products. Over a PR surface, neither CF2 nor CF concentrations vary as a function of PR etch rate. Consequently, they do not appear to be involved in the PR etch mechanism. However, PR etching is also critically dependent on bias power. PR films etch presumably due to energetic ion bombardment that degrades the PR film, making it liable to attack by fluorine.

  20. Reliability evaluation of alumina-blasted/acid-etched versus laser-sintered dental implants.

    PubMed

    Almeida, Erika O; Júnior, Amilcar C Freitas; Bonfante, Estevam A; Silva, Nelson R F A; Coelho, Paulo G

    2013-05-01

    Step-stress accelerated life testing (SSALT) and fractographic analysis were performed to evaluate the reliability and failure modes of dental implant fabricated by machining (surface treated with alumina blasting/acid etching) or laser sintering for anterior single-unit replacements. Forty-two dental implants (3.75 × 10 mm) were divided in two groups (n=21 each): laser sintered (LS) and alumina blasting/acid etching (AB/AE). The abutments were screwed to the implants and standardized maxillary central incisor metallic crowns were cemented and subjected to SSALT in water. Use-level probability Weibull curves and reliability for a mission of 50,000 cycles at 200 N were calculated. Polarized light and scanning electron microscopes were used for failure analyses. The Beta (β) value derived from use-level probability Weibull calculation of 1.48 for group AB/AE indicated that damage accumulation likely was an accelerating factor, whereas the β of 0.78 for group LS indicated that load alone likely dictated the failure mechanism for this group, and that fatigue damage did not appear to accumulate. The reliability was not significantly different (p>0.9) between AB/AE (61 %) and LS (62 %). Fracture of the abutment and fixation screw was the chief failure mode. No implant fractures were observed. No differences in reliability and fracture mode were observed between LS and AB/AE implants used for anterior single-unit crowns. PMID:22843309

  1. Laser desorption/ionization mass spectrometry of lipids using etched silver substrates.

    PubMed

    Schnapp, Andreas; Niehoff, Ann-Christin; Koch, Annika; Dreisewerd, Klaus

    2016-07-15

    Silver-assisted laser desorption/ionization mass spectrometry can be used for the analysis of small molecules. For example, adduct formation with silver cations enables the molecular analysis of long-chain hydrocarbons, which are difficult to ionize via conventional matrix-assisted laser desorption ionization (MALDI). Here we used highly porous silver foils, produced by etching with nitric acid, as sample substrates for LDI mass spectrometry. As model system for the analysis of complex lipid mixtures, cuticular extracts of fruit flies (Drosophila melanogaster) and worker bees (Apis mellifera) were investigated. The mass spectra obtained by spotting extract onto the etched silver substrates demonstrate the sensitive detection of numerous lipid classes such as long-chain saturated and unsaturated hydrocarbons, fatty acyl alcohols, wax esters, and triacylglycerols. MS imaging of cuticular surfaces with a lateral resolution of a few tens of micrometers became possible after blotting, i.e., after transferring lipids by physical contact with the substrate. The examples of pheromone-producing male hindwings of the squinting bush brown butterfly (Bicyclus anynana) and a fingermark are shown. Because the substrates are also easy to produce, they provide a viable alternative to colloidal silver nanoparticles and other so far described silver substrates. PMID:26827933

  2. Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

    NASA Astrophysics Data System (ADS)

    Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

    2007-10-01

    Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate

  3. Laser marking on soda-lime glass by laser-induced backside wet etching with two-beam interference

    NASA Astrophysics Data System (ADS)

    Nakazumi, Tomoka; Sato, Tadatake; Narazaki, Aiko; Niino, Hiroyuki

    2016-09-01

    For crack-free marking of glass materials, a beam-scanning laser-induced backside wet etching (LIBWE) process by a beam spot with a fine periodic structure was examined. The fine periodic structure was produced within a beam spot by means of a Mach–Zehnder interferometer incorporated to the optical setup for the beam-scanning LIBWE. A fine structure with a period of 9 µm was observed within the microstructures with a diameter of ca. 40 µm fabricated by a laser shot under double-beam irradiation, and they could be homogeneously fabricated within an area of 800  ×  800 µm. The area filled with the microstructures, including fine periodic structures, could be observed in high contrast under a diffuse, on-axis illumination that was used in commercial QR code readers.

  4. Shear bond strength of resin cement to an acid etched and a laser irradiated ceramic surface

    PubMed Central

    Motro, Pelin Fatma Karagoz; Yurdaguven, Haktan

    2013-01-01

    PURPOSE To evaluate the effects of hydrofluoric acid etching and Er,Cr:YSGG laser irradiation on the shear bond strength of resin cement to lithium disilicate ceramic. MATERIALS AND METHODS Fifty-five ceramic blocks (5 mm × 5 mm × 2 mm) were fabricated and embedded in acrylic resin. Their surfaces were finished with 1000-grit silicon carbide paper. The blocks were assigned to five groups: 1) 9.5% hydrofluoric-acid etching for 60 s; 2-4), 1.5-, 2.5-, and 6-W Er,Cr:YSGG laser applications for 60 seconds, respectively; and 5) no treatment (control). One specimen from each group was examined using scanning electron microscopy. Ceramic primer (Rely X ceramic primer) and adhesive (Adper Single Bond) were applied to the ceramic surfaces, followed by resin cement to bond the composite cylinders, and light curing. Bonded specimens were stored in distilled water at 37℃ for 24 hours. Shear bond strengths were determined by a universal testing machine at 1 mm/min crosshead speed. Data were analyzed using Kruskal-Wallis and Mann-Whitney U-tests (α=0.05). RESULTS Adhesion was significantly stronger in Group 2 (3.88 ± 1.94 MPa) and Group 3 (3.65 ± 1.87 MPa) than in Control group (1.95 ± 1.06 MPa), in which bonding values were lowest (P<.01). No significant difference was observed between Group 4 (3.59 ± 1.19 MPa) and Control group. Shear bond strength was highest in Group 1 (8.42 ± 1.86 MPa; P<.01). CONCLUSION Er,Cr:YSGG laser irradiation at 1.5 and 2.5 W increased shear bond strengths between ceramic and resin cement compared with untreated ceramic surfaces. Irradiation at 6 W may not be an efficient ceramic surface treatment technique. PMID:23755333

  5. Single-mode Fabry-Perot laser with deeply etched slanted double trenches

    NASA Astrophysics Data System (ADS)

    Li, Xun; Zhu, Zhongshu; Xi, Yanping; Han, Lin; Ke, Cheng; Pan, Yue; Huang, Weiping

    2015-08-01

    This work proposed and demonstrated a single-mode Fabry-Perot (FP) laser structure with a pair of deeply etched slanted trenches inside the cavity. We implemented the proposed mode selection scheme in conventional 1310 nm InAlGaAs/InP strained-layer multiple-quantum-well ridge waveguide FP laser diodes and obtained single-mode operation with a side-mode suppression ratio (SMSR) as high as 35 dB . The single-mode yield was approximately 55%, and other device performance measures such as the threshold and the slope efficiency were not greatly affected. Additionally, temperature cycling and aging tests show no exceptional disadvantages when compared with the performance of conventional FP lasers. Fiber-optic transmission tests show that the proposed device can send directly modulated 2.5 Gbps and 6.25 Gbps optical signals for distances of over 50 km in standard single-mode fiber. Thus, as a cost-effective solution, this device is promising as a replacement for conventional distributed feedback laser diodes in specific applications where single-mode operation is indispensable but precise control of the lasing wavelength and/or very high SMSR (e.g., > 40 dB ) are not required.

  6. Parallel fabrication of high-aspect-ratio all-silicon grooves using femtosecond laser irradiation and wet etching

    NASA Astrophysics Data System (ADS)

    Li, Yanna; Chen, Tao; Pan, An; Li, Cunxia; Tang, Litie

    2015-11-01

    This paper introduces a simple method using 800 nm femtosecond laser irradiation and wet etching with a hydrofluoric (HF) acid solution for the parallel fabrication of high-aspect-ratio all-silicon groove arrays. In this method, one laser beam was divided into five beams by a diffractive optical element. Five laser-induced structure change (LISC) zones were formed in the silicon simultaneously with a single scan of the divided beams, and then the materials in the LISC zones were etched by HF acid solution to form groove arrays. Via this method, all-silicon grooves with aspect ratios up to 39.4 were produced, and the processing efficiency could be increased by five times in contrast with that of the single laser beam irradiation. Furthermore, high-aspect-ratio grooves with near uniform morphologies were fabricated using this method in silicon wafers with different crystal orientations.

  7. All-in-fiber optofluidic sensor fabricated by femtosecond laser assisted chemical etching.

    PubMed

    Yuan, Lei; Huang, Jie; Lan, Xinwei; Wang, Hanzheng; Jiang, Lan; Xiao, Hai

    2014-04-15

    An all-in-fiber prototype optofluidic device was fabricated by femtosecond laser irradiation and subsequent selective chemical wet etching. Horizontal and vertical microchannels can be flexibly created into an optical fiber to form a fluidic cavity with inlets/outlets. The fluidic cavity also functions as an optical Fabry-Perot cavity in which the filled liquid can be probed. The assembly-free microdevice exhibited a fringe visibility of 20 dB and was demonstrated for measurement of the refractive index of the filling liquids. The proposed all-in-fiber optofluidic micro device is attractive for chemical and biomedical sensing because it is flexible in design, simple to fabricate, mechanically robust, and miniaturized in size. PMID:24978992

  8. Large-scale high quality glass microlens arrays fabricated by laser enhanced wet etching.

    PubMed

    Tong, Siyu; Bian, Hao; Yang, Qing; Chen, Feng; Deng, Zefang; Si, Jinhai; Hou, Xun

    2014-11-17

    Large-scale high quality microlens arrays (MLAs) play an important role in enhancing the imaging quality of CCD and CMOS as well as the light extraction efficiency of LEDs and OLEDs. To meet the requirement in MLAs' wide application areas, a rapid fabrication method to fabricate large-scale MLAs with high quality, high fill factor and high uniformity is needed, especially on the glass substrate. In this paper, we present a simple and cost-efficient approach to the development of both concave and convex large-scale microlens arrays (MLAs) by using femtosecond laser wet etching method and replication technique. A large-scale high quality square-shaped microlens array with 512 × 512 units was fabricated.The unit size is 20 × 20 μm² on the whole scale of 1 × 1 cm². Its perfect uniformity and optical performance are demonstrated. PMID:25402166

  9. Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.

    PubMed

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2015-10-01

    We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. PMID:26480176

  10. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    NASA Astrophysics Data System (ADS)

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  11. Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

    SciTech Connect

    Desmoulin, Jean-Charles; Petit, Yannick; Cardinal, Thierry; Canioni, Lionel; Dussauze, Marc; Lahaye, Michel; Gonzalez, Hernando Magallanes; Brasselet, Etienne

    2015-12-07

    Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to the formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.

  12. Femtosecond laser structuring of silver-containing glass: Silver redistribution, selective etching, and surface topology engineering

    NASA Astrophysics Data System (ADS)

    Desmoulin, Jean-Charles; Petit, Yannick; Canioni, Lionel; Dussauze, Marc; Lahaye, Michel; Gonzalez, Hernando Magallanes; Brasselet, Etienne; Cardinal, Thierry

    2015-12-01

    Femtosecond direct laser writing in silver-containing phosphate glasses allows for the three-dimensional (3D) implementation of complex photonic structures. Sample translation along or perpendicular to the direction of the beam propagation has been performed, which led to the permanent formation of fluorescent structures, either corresponding to a tubular shape or to two parallel planes at the vicinity of the interaction voxel, respectively. These optical features are related to significant modifications of the local material chemistry. Indeed, silver depletion areas with a diameter below 200 nm were evidenced at the center of the photo-produced structures while photo-produced luminescence properties are attributed to the formation of silver clusters around the multiphoton interaction voxel. The laser-triggered oxidation-reduction processes and the associated photo-induced silver redistribution are proposed to be at the origin of the observed original 3D luminescent structures. Thanks to such material structuring, surface engineering has been also demonstrated. Selective surface chemical etching of the glass has been obtained subsequently to laser writing at the location of the photo-produced structures, revealing features with nanometric depth profiles and radial dimensions strongly related to the spatial distributions of the silver clusters.

  13. Fabrication of large periodic arrays of AlGaAs microdisks by laser-interference lithography and selective etching

    NASA Astrophysics Data System (ADS)

    Petter, K.; Kipp, T.; Heyn, Ch.; Heitmann, D.; Schuller, C.

    2002-07-01

    By laser-interference lithography, reactive-ion etching, and selective wet-chemical etching using a citric acid-based solution, we have fabricated large periodic arrays of AlGaAs microdisks with periods of 4 mum and disk diameters between 1.5 and 2 mum. The arrays are characterized by temperature-dependent photoluminescence spectroscopy. Taking into account the below-threshold absorption of the quantum wells inside the disks, we get disk quality factors close to the theoretical maximum value. We demonstrate that our technique allows one also to produce one-dimensionally or two-dimensionally coupled arrays of microdisks.

  14. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

    SciTech Connect

    Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; Stanford, M. G.; Lewis, B. B.; Rack, P. D.

    2015-01-28

    We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhanced Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.

  15. Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport

    DOE PAGESBeta

    Noh, J. H.; Fowlkes, J. D.; Timilsina, R.; Stanford, M. G.; Lewis, B. B.; Rack, P. D.

    2015-01-28

    We introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing; we do this in order to enhance the etch rate of electron-beam-induced etching. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. Moreover, the evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. Finally, the increased etch rate is attributed to photothermally enhancedmore » Ti–F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.« less

  16. Pulsed laser-assisted focused electron-beam-induced etching of titanium with XeF2: enhanced reaction rate and precursor transport.

    PubMed

    Noh, J H; Fowlkes, J D; Timilsina, R; Stanford, M G; Lewis, B B; Rack, P D

    2015-02-25

    In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone. PMID:25629708

  17. Laser cleaning of ablation debris from CO 2-laser-etched vias in polyimide

    NASA Astrophysics Data System (ADS)

    Coupland, Kristen; Herman, Peter R.; Gu, Bo

    1998-05-01

    CO 2-laser-drilled vias in polyimide-based flex circuits generate substantial surface debris, requiring new approaches to reduce or eliminate the debris and therefore do away with wet chemical or plasma cleaning steps. A dry laser cleaning process based on a wavelength-tunable CO 2 laser is shown for the first time to effectively remove the ablation debris. Other techniques based on gas flow, pressure control, or ultraviolet lasers, were found ineffective due to the presence of both massive (>10 μm) fibrous debris and submicron (<500 nm) soot. The debris-removal process is driven by disparate mechanisms. The soot is ejected in only ˜5 laser pulses by rapid thermal expansion of the laser-heated polyimide substrate. The removal of fibrous debris develops over many more pulses and involves Fresnel diffraction, surface-rippling phenomena, and multipulse ablation of the debris fragments. The fastest debris cleaning time of 2.5 s per via was provided by the 9R12 laser line at 20 Hz and 0.6 J/cm 2 fluence.

  18. Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching

    NASA Astrophysics Data System (ADS)

    Zhang, Nikai

    . The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.

  19. Subwavelength structures for high power laser antireflection application on fused silica by one-step reactive ion etching

    NASA Astrophysics Data System (ADS)

    Ye, Xin; Jiang, Xiao-Dong; Huang, Jin; Sun, Lai-Xi; Geng, Feng; Yi, Zao; Zu, Xiao-Tao; Wu, Wei-Dong; Zheng, Wanguo

    2016-03-01

    In this paper we report a simple method to fabricate a novel subwavelength structure surface on fused silica substrate using one-step reactive ion etching with two-dimensional polystyrene colloidal crystals as masks. The etching process and the morphologies of the obtained structure are controlled. We show that the period of the obtained fused silica pillar-like arrays were determined by the initial polystyrene nanoparticle size. The height of pillar arrays can be adjusted by controlling the etching duration, which is proved to be of importance in tailoring the antireflection properties of subwavelength structures surface. The novel subwavelength structures surface exhibit excellent broadband antireflection properties, but the size of the pillar affects the antireflective properties in short wavelength region. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency high power laser field designs.

  20. The Effect of Laser-Etched Surface Design on Soft Tissue Healing of Two Different Implant Abutment Systems: An Experimental Study in Dogs.

    PubMed

    Neiva, Rodrigo; Tovar, Nick; Jimbo, Ryo; Gil, Luiz F; Goldberg, Paula; Barbosa, Joao Pm; Lilin, Thomas; Coelho, Paulo G

    2016-01-01

    This study describes the early soft tissue morphology around two different implant systems that received either smooth or laser-etched abutments in a beagle dog model. Implants were placed in the healed mandibular molar region of eight beagle dogs and allowed to heal for 7 weeks. When the most apical aspect of the junctional epithelium (JE) was above or within the upper half of the laser-etched region, fibers were oriented perpendicular to the abutment surface. In contrast, JE positioned within the lower half of the laser-etched region or within or below the implant-abutment gap level presented fibers oriented parallel to the abutment surface. PMID:27560671

  1. Evaluation of the Bond Strength of Resin Cements Used to Lute Ceramics on Laser-Etched Dentin

    PubMed Central

    Duzdar, Lale; Oksuz, Mustafa; Tanboga, Ilknur

    2014-01-01

    Abstract Objective: The purpose of this study was to investigate the shear bond strength (SBS) of two different adhesive resin cements used to lute ceramics on laser-etched dentin. Background data: Erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) laser irradiation has been claimed to improve the adhesive properties of dentin, but results to date have been controversial, and its compatibility with existing adhesive resin cements has not been conclusively determined. Materials and methods: Two adhesive cements, one “etch-and-rinse” [Variolink II (V)] and one “self-etch” [Clearfil Esthetic Cement (C)] luting cement, were used to lute ceramic blocks (Vita Celay Blanks, Vita) onto dentin surfaces. In total, 80 dentin specimens were distributed randomly into eight experimental groups according to the dentin surface-etching technique used Er,Cr:YSGG laser and Er:YAG laser: (1) 37% orthophosphoric acid+V (control group), (2) Er,Cr:YSGG laser+V, (3) Er,Cr:YSGG laser+acid+V, (4) Er:YAG laser+V, (5) Er:YAG laser+acid+V, (6) C, (7) Er,Cr:YSGG laser+C, and (8) Er:YAG laser+C. Following these applications, the ceramic discs were bonded to prepared surfaces and were shear loaded in a universal testing machine until fracture. SBS was recorded for each group in MPa. Shear test values were evaluated statistically using the Mann–Whitney U test. Results: No statistically significant differences were evident between the control group and the other groups (p>0.05). The Er,Cr:YSGG laser+A+V group demonstrated significantly higher SBS than did the Er,Cr:YSGG laser+V group (p=0.034). The Er,Cr:YSGG laser+C and Er:YAG laser+C groups demonstrated significantly lower SBS than did the C group (p<0.05). Conclusions: Dentin surfaces prepared with lasers may provide comparable ceramic bond strengths, depending upon the adhesive cement used. PMID:24992276

  2. Operational specifications of the L.I.T.E.S. (Laser Illuminated Track Etch Scattering) dosemeter reader.

    SciTech Connect

    Moore, M. E.; Devine, R. T.; Gepford, H. J.; McKeever, R. J.; Hoffman, J. M.

    2004-01-01

    The Personnel Dosimetry Operations Team at the Los Alamos National Laboratory (LANL) has accepted the LITES dosimeter reader into its suite of radiation dose measurement instruments. The LITES instrument transmits coherent light from a HeNe laser through the pertinent track etch foil and a photodiode measures the amount of light scattered by the etched tracks. A small beam stop blocks the main laser light, while a lens refocuses the scattered light into the photodiode. Three stepper motors in the current LITES system are used to position a carousel that holds 36 track etch dosimeters. Preliminary work with the LITES system demonstrated the device had a linear response in counting foils subjected to exposures up to 50 mSv (5.0 rem). The United States Department of Energy requires that annual general employee dose not exceed 50 mSv (5.0 rem). On a regular basis, LANL uses the Autoscan 60 reader system (Thermo Electron Corp.) for counting track etch dosimeters. However, LANL uses a 15 hour etch process for CR39 dosimeters, and this produces more and larger track etch pits than the 6 hour etch used by many institutions. Therefore, LANL only uses the Autoscan 60 for measuring neutron dose equivalent up to exposure levels of about 3 mSv (300 mrem). The LITES system has a measured lower limit of detection (LLD) of about 0.6 mSv (60 mrem), and it has a correlation coefficient of R{sup 2} = 0.99 over an exposure range up to 500 mSv (50.0 rem). A series of blind studies were done using three methods: the Autoscan 60 system, manual counting by optical microscope, and the LITES instrument. A collection of track etch dosimeters of unknown NDE (neutron dose equivalent) were analyzed using the three methods, and the (PC) performance coefficient was calculated when the NDE became known. The Autoscan 60 and optical microscope methods had a combined PC = 0.171, and the LITES instrument had a PC = 0.194, where a PC less than or equal to 0.300 is considered satisfactory.

  3. Laser etching causing fatigue fracture at the neck–shoulder junction of an uncemented femoral stem: A case report

    PubMed Central

    Jang, Bob; Kanawati, Andrew; Brazil, Declan; Bruce, Warwick

    2013-01-01

    Fatigue fracture of a femoral component in total hip arthroplasty is a rare occurrence but well documented in the literature. It is understood that proximal loosing of a femoral stem with a well fixed stem distally will result in cantilever bending and eventual fatigue fracture of the stem. Other factors which may potentiate a fatigue fracture are material design, implant positioning, and patient characteristics. More recently, laser etching on the femoral neck of an implant has resulted in fatigue fracture. We report a case of a fatigue fracture at the neck–shoulder junction in a well fixed, uncemented, femoral component due to laser etching in the region of high tensile stress. PMID:24403758

  4. Etching, micro hardness and laser damage threshold studies of a nonlinear optical material L-valine

    NASA Astrophysics Data System (ADS)

    Anbuchezhiyan, M.; Ponnusamy, S.; Muthamizhchelvan, C.; Kanakam, C. C.; Singh, S. P.; Pal, P. K.; Datta, P. K.

    2012-04-01

    A nonlinear optical crystal of L-valine was grown from an aqueous solution containing a small amount of phosphoric acid by the slow evaporation method. The grown crystal was characterized by a single crystal X-ray diffraction to determine the unit cell parameters. The powder X-ray diffraction analysis also confirmed the lattice parameters to be a = 9.6687(7) Å, b = 5.2709(4) Å, c = 12.0371(10) Å and β = 90.805(4)°. The results of the Inductively Coupled Plasma Optical Emission Spectrometry (ICPOES) indicate the presence of a small amount of phosphorus in the grown crystal. The Vickers micro hardness test was performed to study the mechanical strength of the crystals. Chemical etching studies were carried out to analyze the dislocation structure. The laser damaged threshold of the grown crystal was measured to be 11.11 GW/cm2 for 10 ns pulse at 1064 nm, which is higher than that of the standard nonlinear optical crystals like KDP. Second harmonic generation of the grown crystals was also 1.44 times that of KDP.

  5. Track analysis of laser-illuminated etched track detectors using an opto-digital imaging system

    NASA Astrophysics Data System (ADS)

    Eghan, Moses J.; Buah-Bassuah, Paul K.; Oppon, Osborne C.

    2007-11-01

    An opto-digital imaging system for counting and analysing tracks on a LR-115 detector is described. One batch of LR-115 track detectors was irradiated with Am-241 for a determined period and distance for linearity test and another batch was exposed to radon gas. The laser-illuminated etched track detector area was imaged, digitized and analysed by the system. The tracks that were counted on the opto-digital system with the aid of media cybernetics software as well as spark gap counter showed comparable track density results ranging between 1500 and 2750 tracks cm-2 and 65 tracks cm-2 in the two different batch detector samples with 0.5% and 1% track counts, respectively. Track sizes of the incident alpha particles from the radon gas on the LR-115 detector demonstrating different track energies are statistically and graphically represented. The opto-digital imaging system counts and measures other track parameters at an average process time of 3-5 s.

  6. Silicon structuring by etching with liquid chlorine and fluorine precursors using femtosecond laser pulses

    SciTech Connect

    Radu, C.; Simion, S.; Zamfirescu, M.; Ulmeanu, M.; Enculescu, M.; Radoiu, M.

    2011-08-01

    The aim of this study is to investigate the micrometer and submicrometer scale structuring of silicon by liquid chlorine and fluorine precursors with 200 fs laser pulses working at both fundamental (775 nm) and frequency doubled (387 nm) wavelengths. The silicon surface was irradiated at normal incidence by immersing the Si (111) substrates in a glass container filled with liquid chlorine (CCl{sub 4}) and fluorine (C{sub 2}Cl{sub 3}F{sub 3}) precursors. We report that silicon surfaces develop an array of spikes with single step irradiation processes at 775 nm and equally at 387 nm. When irradiating the Si surface with 400 pulses at 330 mJ/cm{sup 2} laser fluence and a 775 nm wavelength, the average height of the formed Si spikes in the case of fluorine precursors is 4.2 {mu}m, with a full width at half maximum of 890 nm. At the same irradiation wavelength chlorine precursors develop Si spikes 4 {mu}m in height and with a full width at half maximum of 2.3 {mu}m with irradiation of 700 pulses at 560 mJ/cm{sup 2} laser fluence. Well ordered areas of submicrometer spikes with an average height of about 500 nm and a width of 300 nm have been created by irradiation at 387 nm by chlorine precursors, whereas the fluorine precursors fabricate spikes with an average height of 700 nm and a width of about 200 nm. Atomic force microscopy and scanning electron microscopy of the surface show that the formation of the micrometer and sub-micrometer spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon, at both 775 nm and 387 nm wavelength irradiation. The energy-dispersive x-ray measurements indicate the presence of chlorine and fluorine precursors on the structured surface. The fluorine precursors create a more ordered area of Si spikes at both micrometer and sub-micrometer scales. The potential use of patterned Si substrates with gradient topography as model scaffolds for the systematic exploration of the role of 3D

  7. Laser-induced particle size tuning and structural transformations in germanium nanoparticles prepared by stain etching and colloidal synthesis route

    SciTech Connect

    Karatutlu, Ali E-mail: ali.karatutlu@bou.edu.tr; Seker, Isa

    2015-12-28

    In this study, with the aid of Raman measurements, we have observed transformations in small (∼3 nm and ∼10 nm) free-standing Ge nanoparticles under laser light exposure. The nanoparticles were obtained by the chemical stain etching of a monocrystalline Ge wafer and of Ge powder and by colloidal synthesis route. We found that the transformation path depends on laser power and exposure time. At relatively low values of the laser power (2 mW) over a period of 100 min, the Raman signal indicates transformation of the sample from a nanocrystaline to bulk-like state, followed by partial oxidation and finally a conversion of the entire sample into alpha-quartz type GeO{sub 2}. However, when the laser power is set at 60 mW, we observed a heat release during an explosive crystallization of the nanocrystalline material into bulk Ge without noticeable signs of oxidation. Together with the transmission electron microscopy measurements, these results suggest that the chemical stain etching method for the preparation of porous Ge may not be a top-down process as has been widely considered, but a bottom up one. Systematic studies of the laser exposure on Ge nanoparticles prepared by colloidal synthesis results in the fact that the explosive crystallisation is common for H-terminated and partially disordered Ge nanoparticles regardless of its particle size. We suggest possible bio-medical applications for the observed phenomena.

  8. Laser-induced particle size tuning and structural transformations in germanium nanoparticles prepared by stain etching and colloidal synthesis route

    NASA Astrophysics Data System (ADS)

    Karatutlu, Ali; Little, William; Ersoy, Osman; Zhang, Yuanpeng; Seker, Isa; Sapelkin, Andrei

    2015-12-01

    In this study, with the aid of Raman measurements, we have observed transformations in small (˜3 nm and ˜10 nm) free-standing Ge nanoparticles under laser light exposure. The nanoparticles were obtained by the chemical stain etching of a monocrystalline Ge wafer and of Ge powder and by colloidal synthesis route. We found that the transformation path depends on laser power and exposure time. At relatively low values of the laser power (2 mW) over a period of 100 min, the Raman signal indicates transformation of the sample from a nanocrystaline to bulk-like state, followed by partial oxidation and finally a conversion of the entire sample into alpha-quartz type GeO2. However, when the laser power is set at 60 mW, we observed a heat release during an explosive crystallization of the nanocrystalline material into bulk Ge without noticeable signs of oxidation. Together with the transmission electron microscopy measurements, these results suggest that the chemical stain etching method for the preparation of porous Ge may not be a top-down process as has been widely considered, but a bottom up one. Systematic studies of the laser exposure on Ge nanoparticles prepared by colloidal synthesis results in the fact that the explosive crystallisation is common for H-terminated and partially disordered Ge nanoparticles regardless of its particle size. We suggest possible bio-medical applications for the observed phenomena.

  9. Modifying the surface charge of single track-etched conical nanopores in polyimide.

    PubMed

    Ali, M; Schiedt, B; Healy, K; Neumann, R; Ensinger, W

    2008-02-27

    Chemical modification of nanopore surfaces is of great interest as it means that the surface composition is no longer fixed by the choice of substrate material, even to the point where large biomolecules can be attached to the pore walls. Controlling nanopore transport characteristics is one important application of surface modification which is very relevant given the significant interest in sensors based on the transport of ions and molecules through nanopores. Reported here is a method to change the surface charge polarity of single track-etched conical nanopores in polyimide, which also has the potential to attach more complex molecules to the carboxyl groups on the nanopore walls. These carboxyl groups were converted into terminal amino groups, first by activation with N-(3-dimethylaminopropyl)-N-ethylcarbodiimide (EDC) and N-hydroxysuccinimide (NHS) followed by the covalent coupling of ethylenediamine. This results in a changed surface charge polarity. Regeneration of a carboxyl-terminated surface was also possible, by reaction of the amino groups with succinic anhydride. The success of these reactions was confirmed by measurements of the pore's pH sensitive current-voltage (I-V) characteristics before and after the chemical modification, which depend on surface charge. The permselectivity of the pores also changed accordingly with the modification. PMID:21730744

  10. Modifying the surface charge of single track-etched conical nanopores in polyimide

    NASA Astrophysics Data System (ADS)

    Ali, M.; Schiedt, B.; Healy, K.; Neumann, R.; Ensinger, W.

    2008-02-01

    Chemical modification of nanopore surfaces is of great interest as it means that the surface composition is no longer fixed by the choice of substrate material, even to the point where large biomolecules can be attached to the pore walls. Controlling nanopore transport characteristics is one important application of surface modification which is very relevant given the significant interest in sensors based on the transport of ions and molecules through nanopores. Reported here is a method to change the surface charge polarity of single track-etched conical nanopores in polyimide, which also has the potential to attach more complex molecules to the carboxyl groups on the nanopore walls. These carboxyl groups were converted into terminal amino groups, first by activation with N-(3-dimethylaminopropyl)-N-ethylcarbodiimide (EDC) and N-hydroxysuccinimide (NHS) followed by the covalent coupling of ethylenediamine. This results in a changed surface charge polarity. Regeneration of a carboxyl-terminated surface was also possible, by reaction of the amino groups with succinic anhydride. The success of these reactions was confirmed by measurements of the pore's pH sensitive current-voltage (I-V) characteristics before and after the chemical modification, which depend on surface charge. The permselectivity of the pores also changed accordingly with the modification.

  11. Microleakage in Class V cavities with self-etching adhesive system and conventional rotatory or laser Er,Cr:YSGG

    PubMed Central

    Arnabat, J; España-Tost, T

    2012-01-01

    Objective: To analyse microleakage in Class V cavity preparation with Er;Cr:YSGG at different parameters using a self-etching adhesive system. Background: Several studies reported microleakage around composite restorations when cavity preparation is done or treated by Er;Cr:YSGG laser. We want to compare different energy densities in order to obtain the best parameters, when using a self-etching adhesive system. Methods: A class V preparations was performed in 120 samples of human teeth were divided in 3 groups: (1) Preparation using the burr. (2) Er;Cr:YSGG laser preparation with high energy 4W, 30 Hz, 50% Water 50% Air and (3) Er;Cr:YSGG laser preparation lower energy 1.5 W, 30 Hz, 30% Water 30% Air. All the samples were restored with self-etching adhesive system and hybrid composite. Thermocycling (5000 cycles) and immersed in 0.5% fuchsin. The restorations were sectioned and evaluated the microleakage with a stereomicroscope. Results: Lower energy laser used for preparation showed significant differences in enamel and dentin. To group 3, the microleakage in the enamel was less, whilst the group 1, treated with the turbine, showed less microleakage at dentin level. Group 2 showed the highest microleakage at dentin/cement level. Conclusion: Burr preparation gives the lowest microleakage at cement/dentin level, whilst Er;Cr:YSGG laser at lower power has the low energy obtains lowest microleakage at enamel. On the contrary high-energy settings produce inferior results in terms of microleakage. PMID:24511195

  12. Investigation of surface damage precursor evolutions and laser-induced damage threshold improvement mechanism during Ion beam etching of fused silica.

    PubMed

    Shi, Feng; Zhong, Yaoyu; Dai, Yifan; Peng, Xiaoqiang; Xu, Mingjin; Sui, Tingting

    2016-09-01

    Surface damage precursor evolution has great influence on laser-induced damage threshold improvement of fused silica surface during Ion beam etching. In this work, a series of ion sputtering experiment are carried out to obtain the evolutions of damage precursors (dot-form microstructures, Polishing-Induced Contamination, Hertz scratches, and roughness). Based on ion sputtering theory, surface damage precursor evolutions are analyzed. The results show that the dot-form microstructures will appear during ion beam etching. But as the ion beam etching depth goes up, the dot-form microstructures can be mitigated. And ion-beam etching can broaden and passivate the Hertz scratches without increasing roughness value. A super-smooth surface (0.238nm RMS) can be obtained finally. The relative content of Fe and Ce impurities both significantly reduce after ion beam etching. The laser-induced damage threshold of fused silica is improved by 34% after ion beam etching for 800nm. Research results can be a reference on using ion beam etching process technology to improve laser-induced damage threshold of fused silica optics. PMID:27607688

  13. Study of the effects of polishing, etching, cleaving, and water leaching on the UV laser damage of fused silica

    SciTech Connect

    Yoshiyama, J.; Genin, F.Y.; Salleo, A.; Thomas, I.; Kozlowski, M.R.; Sheehan, L.M.; Hutcheon, I.D.; Camp, D.W.

    1997-12-23

    A damage morphology study was performed with a 355 nm Nd:YAG laser on synthetic UV-grade fused silica to determine the effects of post- polish chemical etching on laser-induced damage, compare damage morphologies of cleaved and polished surfaces, and understand the effects of the hydrolyzed surface layer and waste-crack interactions. The samples were polished , then chemically etched in buffered HF solution to remove 45,90,135, and 180 nm of surface material. Another set of samples was cleaved and soaked in boiling distilled water for 1 second and 1 hour. All the samples were irradiated at damaging fluencies and characterized by Normarski optical microscopy and scanning electron microscopy. Damage was initiated as micro-pits on both input and output surfaces of the polished fused silica sample. At higher fluencies, the micro-pits generated cracks on the surface. Laser damage of the polished surface showed significant trace contamination levels within a 50 nm surface layer. Micro-pit formation also appeared after irradiating cleaved fused silica surfaces at damaging fluences. Linear damage tracks corresponding cleaving tracks were often observed on cleaved surfaces. Soaking cleaved samples in water produced wide laser damage tracks.

  14. Atomic diffusion in laser surface modified AISI H13 steel

    NASA Astrophysics Data System (ADS)

    Aqida, S. N.; Brabazon, D.; Naher, S.

    2013-07-01

    This paper presents a laser surface modification process of AISI H13 steel using 0.09 and 0.4 mm of laser spot sizes with an aim to increase surface hardness and investigate elements diffusion in laser modified surface. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, pulse repetition frequency (PRF), and overlap percentage. The hardness properties were tested at 981 mN force. Metallographic study and energy dispersive X-ray spectroscopy (EDXS) were performed to observe presence of elements and their distribution in the sample surface. Maximum hardness achieved in the modified surface was 1017 HV0.1. Change of elements composition in the modified layer region was detected in the laser modified samples. Diffusion possibly occurred for C, Cr, Cu, Ni, and S elements. The potential found for increase in surface hardness represents an important method to sustain tooling life. The EDXS findings signify understanding of processing parameters effect on the modified surface composition.

  15. Comparison of tensile bond strengths of four one-bottle self-etching adhesive systems with Er:YAG laser-irradiated dentin.

    PubMed

    Jiang, Qianzhou; Chen, Minle; Ding, Jiangfeng

    2013-12-01

    This study aimed to investigate the interaction of current one-bottle self-etching adhesives and Er:YAG laser with dentin using a tensile bond strength (TBS) test and scanning electron microscopy (SEM) in vitro. Two hundred and thirteen dentin discs were randomly distributed to the Control Group using bur cutting and to the Laser Group using an Er:YAG laser (200 mJ, VSP, 20 Hz). The following adhesives were investigated: one two-step total-etch adhesive [Prime & Bond NT (Dentsply)] and four one-step self-etch adhesives [G-Bond plus (GC), XENO V (Dentsply), iBond Self Etch (Heraeus) and Adper Easy One (3 M ESPE)]. Samples were restored with composite resin, and after 24-hour storage in distilled water, subjected to the TBS test. For morphological analysis, 12 dentin specimens were prepared for SEM. No significant differences were found between the control group and laser group (p = 0.899); dentin subjected to Prime & Bond NT, XENOV and Adper Easy One produced higher TBS. In conclusion, this study indicates that Er:YAG laser-prepared dentin can perform as well as bur on TBS, and some of the one-step one-bottle adhesives are comparable to the total-etch adhesives in TBS on dentin. PMID:24190486

  16. Investigations on the SR method growth, etching, birefringence, laser damage threshold and dielectric characterization of sodium acid phthalate single crystals

    NASA Astrophysics Data System (ADS)

    Senthil, A.; Ramasamy, P.; Verma, Sunil

    2011-03-01

    Optically good quality semi-organic single crystal of sodium acid phthalate (NaAP) was successfully grown by Sankaranarayanan-Ramasamy (SR) method. Transparent, colourless <0 0 1> oriented unidirectional bulk single crystals of diameters 10 and 20 mm and length maximum up to 75 mm were grown by the SR method. The grown crystals were subjected to various characterization studies such as etching, birefringence, laser damage threshold, UV-vis spectrum and dielectric measurement. The value of birefringence and quality were ascertained by birefringence studies.

  17. Highly sensitive refractive index fiber inline Mach-Zehnder interferometer fabricated by femtosecond laser micromachining and chemical etching

    NASA Astrophysics Data System (ADS)

    Sun, Xiao-Yan; Chu, Dong-Kai; Dong, Xin-Ran; Zhou, Chu; Li, Hai-Tao; Luo-Zhi; Hu, You-Wang; Zhou, Jian-Ying; Cong-Wang; Duan, Ji-An

    2016-03-01

    A High sensitive refractive index (RI) sensor based on Mach-Zehnder interferometer (MZI) in a conventional single-mode optical fiber is proposed, which is fabricated by femtosecond laser transversal-scanning inscription method and chemical etching. A rectangular cavity structure is formed in part of fiber core and cladding interface. The MZI sensor shows excellent refractive index sensitivity and linearity, which exhibits an extremely high RI sensitivity of -17197 nm/RIU (refractive index unit) with the linearity of 0.9996 within the refractive index range of 1.3371-1.3407. The experimental results are consistent with theoretical analysis.

  18. Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

    SciTech Connect

    Hübner, M.; Lang, N.; Röpcke, J.; Helden, J. H. van; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.

    2015-01-19

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  19. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    NASA Astrophysics Data System (ADS)

    Leonard, J. T.; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Lee, S.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2016-01-01

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ˜22 kA/cm2 (25 mA), with a peak output power of ˜180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP12,1), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  20. Evaluation of Self-Etching Adhesive and Er:YAG Laser Conditioning on the Shear Bond Strength of Orthodontic Brackets

    PubMed Central

    Contreras-Bulnes, Rosalía; Scougall-Vilchis, Rogelio J.; Rodríguez-Vilchis, Laura E.; Centeno-Pedraza, Claudia; Olea-Mejía, Oscar F.; Alcántara-Galena, María del Carmen Z.

    2013-01-01

    The purpose of this study was to evaluate the shear bond strength, the adhesive remnant index scores, and etch surface of teeth prepared for orthodontic bracket bonding with self-etching primer and Er:YAG laser conditioning. One hundred and twenty bovine incisors were randomly divided into four groups. In Group I (Control), the teeth were conditioned with 35% phosphoric acid for 15 seconds. In Group II the teeth were conditioned with Transbond Plus SEP (5 sec); III and IV were irradiated with the Er:YAG 150 mJ (11.0 J/cm2), 150 mJ (19.1 J/cm2), respectively, at 7–12 Hz with water spray. After surface preparation, upper central incisor stainless steel brackets were bonded with Transbond Plus Color Change Adhesive. The teeth were stored in water at 37°C for 24 hours and shear bond strengths were measured, and adhesive remnant index (ARI) was determined. The conditioned surface was observed under a scanning electron microscope. One-way ANOVA and chi-square test were used. Group I showed the significantly highest values of bond strength with a mean value of 8.2 megapascals (MPa). The lesser amount of adhesive remnant was found in Group III. The results of this study suggest that Er:YAG laser irradiation could not be an option for enamel conditioning. PMID:24228014

  1. Laser-Modified Surface Enhances Osseointegration and Biomechanical Anchorage of Commercially Pure Titanium Implants for Bone-Anchored Hearing Systems

    PubMed Central

    Omar, Omar; Simonsson, Hanna; Palmquist, Anders; Thomsen, Peter

    2016-01-01

    Osseointegrated implants inserted in the temporal bone are a vital component of bone-anchored hearing systems (BAHS). Despite low implant failure levels, early loading protocols and simplified procedures necessitate the application of implants which promote bone formation, bone bonding and biomechanical stability. Here, screw-shaped, commercially pure titanium implants were selectively laser ablated within the thread valley using an Nd:YAG laser to produce a microtopography with a superimposed nanotexture and a thickened surface oxide layer. State-of-the-art machined implants served as controls. After eight weeks’ implantation in rabbit tibiae, resonance frequency analysis (RFA) values increased from insertion to retrieval for both implant types, while removal torque (RTQ) measurements showed 153% higher biomechanical anchorage of the laser-modified implants. Comparably high bone area (BA) and bone-implant contact (BIC) were recorded for both implant types but with distinctly different failure patterns following biomechanical testing. Fracture lines appeared within the bone ~30–50 μm from the laser-modified surface, while separation occurred at the bone-implant interface for the machined surface. Strong correlations were found between RTQ and BIC and between RFA at retrieval and BA. In the endosteal threads, where all the bone had formed de novo, the extracellular matrix composition, the mineralised bone area and osteocyte densities were comparable for the two types of implant. Using resin cast etching, osteocyte canaliculi were observed directly approaching the laser-modified implant surface. Transmission electron microscopy showed canaliculi in close proximity to the laser-modified surface, in addition to a highly ordered arrangement of collagen fibrils aligned parallel to the implant surface contour. It is concluded that the physico-chemical surface properties of laser-modified surfaces (thicker oxide, micro- and nanoscale texture) promote bone bonding

  2. Laser-Modified Surface Enhances Osseointegration and Biomechanical Anchorage of Commercially Pure Titanium Implants for Bone-Anchored Hearing Systems.

    PubMed

    Shah, Furqan A; Johansson, Martin L; Omar, Omar; Simonsson, Hanna; Palmquist, Anders; Thomsen, Peter

    2016-01-01

    Osseointegrated implants inserted in the temporal bone are a vital component of bone-anchored hearing systems (BAHS). Despite low implant failure levels, early loading protocols and simplified procedures necessitate the application of implants which promote bone formation, bone bonding and biomechanical stability. Here, screw-shaped, commercially pure titanium implants were selectively laser ablated within the thread valley using an Nd:YAG laser to produce a microtopography with a superimposed nanotexture and a thickened surface oxide layer. State-of-the-art machined implants served as controls. After eight weeks' implantation in rabbit tibiae, resonance frequency analysis (RFA) values increased from insertion to retrieval for both implant types, while removal torque (RTQ) measurements showed 153% higher biomechanical anchorage of the laser-modified implants. Comparably high bone area (BA) and bone-implant contact (BIC) were recorded for both implant types but with distinctly different failure patterns following biomechanical testing. Fracture lines appeared within the bone ~30-50 μm from the laser-modified surface, while separation occurred at the bone-implant interface for the machined surface. Strong correlations were found between RTQ and BIC and between RFA at retrieval and BA. In the endosteal threads, where all the bone had formed de novo, the extracellular matrix composition, the mineralised bone area and osteocyte densities were comparable for the two types of implant. Using resin cast etching, osteocyte canaliculi were observed directly approaching the laser-modified implant surface. Transmission electron microscopy showed canaliculi in close proximity to the laser-modified surface, in addition to a highly ordered arrangement of collagen fibrils aligned parallel to the implant surface contour. It is concluded that the physico-chemical surface properties of laser-modified surfaces (thicker oxide, micro- and nanoscale texture) promote bone bonding which

  3. Controllable high-throughput high-quality femtosecond laser-enhanced chemical etching by temporal pulse shaping based on electron density control

    PubMed Central

    Zhao, Mengjiao; Hu, Jie; Jiang, Lan; Zhang, Kaihu; Liu, Pengjun; Lu, Yongfeng

    2015-01-01

    We developed an efficient fabrication method of high-quality concave microarrays on fused silica substrates based on temporal shaping of femtosecond (fs) laser pulses. This method involves exposures of fs laser pulse trains followed by a wet etching process. Compared with conventional single pulses with the same processing parameters, the temporally shaped fs pulses can enhance the etch rate by a factor of 37 times with better controllability and higher quality. Moreover, we demonstrated the flexibility of the proposed method in tuning the profile of the concave microarray structures by changing the laser pulse delay, laser fluence, and pulse energy distribution ratio. Micro-Raman spectroscopy was conducted to elucidate the stronger modification induced by the fs laser pulse trains in comparison with the single pulses. Our calculations show that the controllability is due to the effective control of localized transient free electron densities by temporally shaping the fs pulses. PMID:26307148

  4. Long-wavelength vertical-cavity surface-emitting lasers with selectively etched thin apertures

    NASA Astrophysics Data System (ADS)

    Feezell, Daniel F.

    Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1300--1600nm wavelength window are attractive light sources for short to mid-range optical fiber communications. These devices target low-loss and low-dispersion minima in standard optical fibers and are expected to provide a low-cost alternative to the existing edge-emitting infrastructure. With low-power consumption, on wafer testing; simple packaging, and high fiber-coupling efficiency, VCSELs are ideal transmitters for CWDM, metro, local area, and storage area networks. Recently, much attention has been devoted to a rich variety of approaches to long-wavelength VCSELs. One underlying problem, however, has been the need to match a reliable high-gain active region with high-index-contrast distributed Bragg reflectors (DBRs) over the full 1300--1600nm wavelength range. One solution to this problem is to utilize well-established InAlGaAs active-region technology coupled with AlGaAsSb DBRs. This combination facilitates monolithic all-epitaxial InP-based devices spanning the entire 1300--1600nm wavelength range. Previously, Dr. Shigeru Nakagawa and Dr. Eric Hall have demonstrated long-wavelength VCSELs with Sb-based technology operating at 1550nm. This dissertation demonstrates the first high-performance InP-based VCSELs with Sb-based DBRs operating at 1310nm, thus solidifying Sb-based technology as a wavelength flexible platform for long-wavelength devices. Also developed is a novel and efficient tunnel-junction aperturing technology for generating extremely low-loss optical and electrical confinement. Lastly, it is shown that the benefits from such an aperturing scheme produce marked improvements in device operation versus previously demonstrated Sb-based VCSELs. The devices from this research generated over 1.6mW single-mode continuous-wave (CW) output power at room temperature (>2mW multi-mode), displayed threshold currents down to 1mA, and operated CW up to 90°C. Furthermore, world

  5. Modified Phasemeter for a Heterodyne Laser Interferometer

    NASA Technical Reports Server (NTRS)

    Loya, Frank M.

    2010-01-01

    Modifications have been made in the design of instruments of the type described in "Digital Averaging Phasemeter for Heterodyne Interferometry". A phasemeter of this type measures the difference between the phases of the unknown and reference heterodyne signals in a heterodyne laser interferometer. The phasemeter design lacked immunity to drift of the heterodyne frequency, was bandwidth-limited by computer bus architectures then in use, and was resolution-limited by the nature of field-programmable gate arrays (FPGAs) then available. The modifications have overcome these limitations and have afforded additional improvements in accuracy, speed, and modularity. The modifications are summarized.

  6. The Effect of Carbon Dioxide (CO2) Laser on Sandblasting with Large Grit and Acid Etching (SLA) Surface

    PubMed Central

    Foroutan, Tahereh; Ayoubian, Nader

    2013-01-01

    Introduction: The purpose of this study was to investigate the effect of 6W power Carbon Dioxide Laser (CO2) on the biologic compatibility of the Sandblasting with large grit and acid etching (SLA) titanium discs through studying of the Sarcoma Osteogenic (SaOS-2) human osteoblast-like cells viability. Methods: Sterilized titanium discs were used together with SaOS-2 human osteoblast-like cells. 6 sterilized SLA titanium discs of the experimental group were exposed to irradiation by CO2 laser with a power of 6W and 10.600nm wavelength, at fixed frequency of 80Hz during 45 seconds in both pulse and non-contact settings. SaOS-2 human osteoblast-like cells were incubated under 37°C in humid atmosphere (95% weather, 5% CO2) for 72 hours. MTT test was performed to measure the ratio level of cellular proliferation. Results: The results indicated that at 570nm wavelength, the 6W CO2 laser power have not affected the cellular viability. Conclusion: CO2 laser in 6w power has had no effect on the biologic compatibility of the SLA titanium surface PMID:25606313

  7. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  8. Guidelines for Clinical Management of Laser-Etched (Laser-Lok) Abutments in Two Different Clinical Scenarios: A Preclinical Laboratory Soft Tissue Assessment Study.

    PubMed

    Neiva, Rodrigo; Tovar, Nick; Jimbo, Ryo; Gil, Luiz F; Goldberg, Paula; Barbosa, Joao Pm; Lilin, Thomas; Coelho, Paulo G

    2016-01-01

    One-stage implants were placed in the mandibles of eight beagle dogs with laser-etched (LL) and machined abutments. After 4 weeks, half of the LL abutments were disconnected and reconnected after 10 minutes of saline storage, and the other half were replaced with a new LL abutment (impression simulation) with or without sulcus de-epithelialization. After abutment change, systems remained in vivo for 3 weeks. Results showed that LL abutments can be reconnected and that sulcus scoring prior to LL placement of one-stage implants receiving machined abutments may be beneficial. PMID:27100803

  9. Etching and Growth of GaAs

    NASA Technical Reports Server (NTRS)

    Seabaugh, A. C.; Mattauch, R., J.

    1983-01-01

    In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

  10. Influence of different Er,Cr:YSGG laser parameters on long-term dentin bond strength of self-etch adhesive.

    PubMed

    Yildirim, Tahsin; Ayar, Muhammet Kerim; Yesilyurt, Cemal

    2015-12-01

    The aim of the present study was to evaluate the effects of erbium, chromium: yattrium-scandium-gallium-garnet (Er,Cr:YSGG) laser frequency on microtensile bond strength (μTBS) of a self-etch adhesive to dentin after 15-month water storage. The Er,Cr:YSGG laser can safely be used on dental hard tissue. However, no study has compared the effects of Er,Cr:YSGG laser parameters and aging by water storage on the bonding effectiveness of self-etch adhesives to dentin. Thirty-five bovine teeth were randomly assigned to the following seven groups (n = 5): group I (diamond bur with high-speed handpiece (control)), group II (Er,Cr:YSGG laser 3 W/50 Hz), group III (Er,Cr:YSGG laser 3 W/35 Hz), group IV (Er,Cr:YSGG laser 3 W/20 Hz), group V (Er,Cr:YSGG laser 6 W/50 Hz), group VI (Er,Cr:YSGG laser 6 W/35 Hz), and group VII (Er,Cr:YSGG laser 6 W/20 Hz). Clearfil SE Bond was applied to the prepared dentin, and the composites were placed and cured. Resin-dentin sticks with an approximate cross-sectional area of 0.8 mm(2) were obtained, and bond strength tests were performed at 24 h and 15 months of water storage after bonding. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests (p < 0.05). Laser irradiation resulted in significantly lower bond strengths when compared to bur treating. Fifteen-month water storage reduced bond strength for all groups. There was no significant difference among the effects of different laser frequencies on bond strength. It can be concluded that Er,Cr:YSGG laser used at the tested parameters may alter the dentin bond durability of self-etch adhesive. PMID:26498449

  11. Improved patterning of ITO coated with gold masking layer on glass substrate using nanosecond fiber laser and etching

    NASA Astrophysics Data System (ADS)

    Tan, Nguyen Ngoc; Hung, Duong Thanh; Anh, Vo Tran; BongChul, Kang; HyunChul, Kim

    2015-05-01

    In this paper, an indium-tin oxide (ITO) thin-film patterning method for higher pattern quality and productivity compared to the short-pulsed laser direct writing method is presented. We sputtered a thin ITO layer on a glass substrate, and then, plated a thin gold layer onto the ITO layer. The combined structure of the three layers (glass-ITO-gold) was patterned using laser-induced plasma generated by an ytterbium pulsed fiber laser (λ = 1064 nm). The results showed that the process parameters of 50 mm/s in scanning speed, 14 ns pulse duration, and a repetition rate of 7.5 kHz represented optimum conditions for the fabrication of ITO channels. Under these conditions, a channel 23.4 μm wide and 20 nm deep was obtained. However, built-up spikes (∼15 nm in height) resulted in a decrease in channel quality, and consequently, short circuit occurred at some patterned positions. These built-up spikes were completely removed by dipping the ITO layer into an etchant (18 wt.% HCl). A gold masking layer on the ITO surface was found to increase the channel surface quality without any decrease in ITO thickness. Moreover, the effects of repetition rate, scanning speed, and etching characteristics on surface quality were investigated.

  12. CO2 laser cleaning of black deposits formed during the excimer laser etching of polyimide in air

    NASA Astrophysics Data System (ADS)

    Koren, G.; Donelon, J. J.

    1988-01-01

    Pulsed CO2 laser cleaning of black debris formed during the excimer laser ablation of polyimide in air is demonstrated. The 10.6 μm CO2 laser radiation is strongly absorbed in the debris but only weakly absorbed in polyimide thus enabling the clean removal of the debris without damaging the polyimide.

  13. In vitro analysis of riboflavin-modified, experimental, two-step etch-and-rinse dentin adhesive: Fourier transform infrared spectroscopy and micro-Raman studies.

    PubMed

    Daood, Umer; Swee Heng, Chan; Neo Chiew Lian, Jennifer; Fawzy, Amr S

    2015-06-01

    To modify two-step experimental etch-and-rinse dentin adhesive with different concentrations of riboflavin and to study its effect on the bond strength, degree of conversion, along with resin infiltration within the demineralized dentin substrate, an experimental adhesive-system was modified with different concentrations of riboflavin (m/m, 0, 1%, 3%, 5% and 10%). Dentin surfaces were etched with 37% phosphoric acid, bonded with respective adhesives, restored with restorative composite-resin, and sectioned into resin-dentin slabs and beams to be stored for 24 h or 9 months in artificial saliva. Micro-tensile bond testing was performed with scanning electron microscopy to analyse the failure of debonded beams. The degree of conversion was evaluated with Fourier transform infrared spectroscopy (FTIR) at different time points along with micro-Raman spectroscopy analysis. Data was analyzed with one-way and two-way analysis of variance followed by Tukey's for pair-wise comparison. Modification with 1% and 3% riboflavin increased the micro-tensile bond strength compared to the control at 24 h and 9-month storage with no significant differences in degree of conversion (P<0.05). The most predominant failure mode was the mixed fracture among all specimens except 10% riboflavin-modified adhesive specimens where cohesive failure was predominant. Raman analysis revealed that 1% and 3% riboflavin adhesives specimens showed relatively higher resin infiltration. The incorporation of riboflavin in the experimental two-step etch-and-rinse adhesive at 3% (m/m) improved the immediate bond strengths and bond durability after 9-month storage in artificial saliva without adversely affecting the degree of conversion of the adhesive monomers and resin infiltration. PMID:25257880

  14. In vitro analysis of riboflavin-modified, experimental, two-step etch-and-rinse dentin adhesive: Fourier transform infrared spectroscopy and micro-Raman studies

    PubMed Central

    Daood, Umer; Swee Heng, Chan; Neo Chiew Lian, Jennifer; Fawzy, Amr S

    2015-01-01

    To modify two-step experimental etch-and-rinse dentin adhesive with different concentrations of riboflavin and to study its effect on the bond strength, degree of conversion, along with resin infiltration within the demineralized dentin substrate, an experimental adhesive-system was modified with different concentrations of riboflavin (m/m, 0, 1%, 3%, 5% and 10%). Dentin surfaces were etched with 37% phosphoric acid, bonded with respective adhesives, restored with restorative composite–resin, and sectioned into resin–dentin slabs and beams to be stored for 24 h or 9 months in artificial saliva. Micro-tensile bond testing was performed with scanning electron microscopy to analyse the failure of debonded beams. The degree of conversion was evaluated with Fourier transform infrared spectroscopy (FTIR) at different time points along with micro-Raman spectroscopy analysis. Data was analyzed with one-way and two-way analysis of variance followed by Tukey's for pair-wise comparison. Modification with 1% and 3% riboflavin increased the micro-tensile bond strength compared to the control at 24 h and 9-month storage with no significant differences in degree of conversion (P<0.05). The most predominant failure mode was the mixed fracture among all specimens except 10% riboflavin-modified adhesive specimens where cohesive failure was predominant. Raman analysis revealed that 1% and 3% riboflavin adhesives specimens showed relatively higher resin infiltration. The incorporation of riboflavin in the experimental two-step etch-and-rinse adhesive at 3% (m/m) improved the immediate bond strengths and bond durability after 9-month storage in artificial saliva without adversely affecting the degree of conversion of the adhesive monomers and resin infiltration. PMID:25257880

  15. Bioactive glass surface for fiber reinforced composite implants via surface etching by Excimer laser.

    PubMed

    Kulkova, Julia; Moritz, Niko; Huhtinen, Hannu; Mattila, Riina; Donati, Ivan; Marsich, Eleonora; Paoletti, Sergio; Vallittu, Pekka K

    2016-07-01

    Biostable fiber-reinforced composites (FRC) prepared from bisphenol-A-glycidyldimethacrylate (BisGMA)-based thermosets reinforced with E-glass fibers are promising alternatives to metallic implants due to the excellent fatigue resistance and the mechanical properties matching those of bone. Bioactive glass (BG) granules can be incorporated within the polymer matrix to improve the osteointegration of the FRC implants. However, the creation of a viable surface layer using BG granules is technically challenging. In this study, we investigated the potential of Excimer laser ablation to achieve the selective removal of the matrix to expose the surface of BG granules. A UV-vis spectroscopic study was carried out to investigate the differences in the penetration of light in the thermoset matrix and BG. Thereafter, optimal Excimer laser ablation parameters were established. The formation of a calcium phosphate (CaP) layer on the surface of the laser-ablated specimens was verified in simulated body fluid (SBF). In addition, the proliferation of MG63 cells on the surfaces of the laser-ablated specimens was investigated. For the laser-ablated specimens, the pattern of proliferation of MG63 cells was comparable to that in the positive control group (Ti6Al4V). We concluded that Excimer laser ablation has potential for the creation of a bioactive surface on FRC-implants. PMID:27134152

  16. The Effects of Laser Marking and Symbol Etching on the Fatigue Life of Medical Devices

    PubMed Central

    Ogrodnik, P. J.; Moorcroft, C. I.; Wardle, P.

    2013-01-01

    This paper examines the question;“ does permanent laser marking affect the mechanical performance of a metallic medical component?” The literature review revealed the surprising fact that very little has been presented or studied even though intuition suggests that its effect could be detrimental to a component's fatigue life. A brief investigation of laser marking suggests that defects greater than 25 μm are possible. A theoretical investigation further suggests that this is unlikely to cause issues with relation to fast fracture but is highly likely to cause fatigue life issues. An experimental investigation confirmed that laser marking reduced the fatigue life of a component. This combination of lines of evidence suggests, strongly, that positioning of laser marking is highly critical and should not be left to chance. It is further suggested that medical device designers, especially those related to orthopaedic implants, should consider the position of laser marking in the design process. They should ensure that it is in an area of low stress amplitude. They should also ensure that they investigate worst-case scenarios when considering the stress environment; this, however, may not be straightforward. PMID:27006919

  17. A modified pump laser system to pump the titanium sapphire laser

    NASA Technical Reports Server (NTRS)

    Petway, Larry B.

    1990-01-01

    As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

  18. Self-assembled and etched cones on laser ablated polymer surfaces

    NASA Astrophysics Data System (ADS)

    Murthy, N. S.; Prabhu, R. D.; Martin, J. J.; Zhou, L.; Headrick, R. L.

    2006-07-01

    At least two different routes lead to conical structures on laser ablated polymer surfaces. These were investigated by studying laser ablation on the surfaces of different classes of polymers. Cones appeared readily in strongly absorbing polymers such as poly(ethylene terephthalate) (PET) and polyimide (PI), but only within narrow laser parameters in nylon 6, and rarely in poly(chlorotrifluoroethylene), the last two being weak ultraviolet (UV) absorbers. Self-assembled, close-packed cones occurred in PET, in which heat generated due to absorbed laser energy creates a thin, chemically stable, viscoelastic, highly compliant layer (above the glass transition temperature). Surface structure in such polymers evolves from nodules through donuts into ripples and finally to cones as the energy deposited per unit area on the surface (total fluence) is increased using a combination of single pulse fluence and number of pulses. A phase transition from a ripple phase to a cone phase is thought to occur as the thickness of the viscoelastic surface layer increases above a critical value. Cones began to appear from almost the beginning of the irradiation process at random locations in PI, a polymer whose surface irreversibly turns into a hard solid upon exposure to either or both UV and heat. It is proposed that the radiation hardened spots serve as nuclei, a cone "grows" out of this as the material surrounding this nuclei is ablated. The initial sparse occurrence of cones in PI-like polymers, and the increase in their number density with total fluence until the surface is densely packed with cones can be explained by a nucleation and growth model.

  19. Effects of texturization due to chemical etching and laser on the optical properties of multicrystalline silicon for applications in solar cells

    NASA Astrophysics Data System (ADS)

    Vera, D.; Mass, J.; Manotas, M.; Cabanzo, R.; Mejia, E.

    2016-02-01

    In this work we carried out the texturization of surfaces of multicrystalline silicon type-p in order to decrease the reflection of light on the surface, using the chemical etching method and then a treatment with laser. In the first method, it was immersed in solutions of HF:HNO3:H2O, HF:HNO3:CH3COOH, HF:HNO3:H3PO4, in the proportion 14:01:05, during 30 seconds, 1, 2 and 3 minutes. Subsequently with a laser (ND:YAG) grids were generated beginning with parallel lines separated 50μm. The samples were analyzed by means of diffuse spectroscopy (UV-VIS) and scanning electron micrograph (SEM) before and after the laser treatment. The lowest result of reflectance obtained by HF:HNO3:H2O during 30 seconds, was of 15.5%. However, after applying the treatment with laser the reflectance increased to 17.27%. On the other hand, the samples treated (30 seconds) with acetic acid and phosphoric acid as diluents gives as a result a decrease in the reflectance values after applying the laser treatment from 21.97% to 17.79% and from 27.73% to 20.03% respectively. The above indicates that in some cases it is possible to decrease the reflectance using jointly the method of chemical etching and then a laser treatment.

  20. Rapid 2D incoherent mirror fabrication by laser interference lithography and wet etching for III-V MQW solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Freundlich, Alex

    2016-03-01

    Optimization of non-planar antireflective coating and back- (or front-) surface texturing are widely studied as advanced light management approach to further reduce the reflection losses and increase the sunlight absorption path in solar cells. Rear reflectors have been developed from coherent mirrors to incoherent mirrors in order to further increase light path, which can significantly improve the efficiency and allow for much thinner devices. A Lambertian surface, which has the most random texture, can theoretically raise the light path to 4n2 times that of a smooth surface. It's a challenge however to fabricate ideal Lambertian texture, especially in a fast and low cost way. In this work, a method is developed to overcome this challenge that combines the use of laser interference lithography (LIL) and selective wet etching. This approach allows for a rapid (10 min) wafer scale (3 inch wafer) texture processing with sub-wavelength (nano)-scale control of the pattern and the pitch. The technique appears as being particularly attractive for the development of ultrathin III-V devices, or in overcoming the weak sub-bandgap absorption in devices incorporating quantum dots or quantum wells. The structure of the device is demonstrated, without affecting active layers.

  1. Topography-based surface tension gradients to facilitate water droplet movement on laser-etched copper substrates.

    PubMed

    Sommers, A D; Brest, T J; Eid, K F

    2013-09-24

    This paper describes a method for creating a topography-based gradient on a metallic surface to help mitigate problems associated with condensate retention. The gradient was designed to promote water droplet migration toward a specified region on the surface which would serve as the primary conduit for drainage using only the roughness of the surface to facilitate the movement of the droplets. In this work, parallel microchannels having a fixed land width but variable spacing were etched into copper substrates to create a surface tension gradient along the surface of the copper. The surfaces were fabricated using a 355 nm Nd:YVO4 laser system and then characterized using spray testing techniques and water droplet (2-10 μL) injection via microsyringe. The distances that individual droplets traveled on the gradient surface were also measured using a goniometer and CCD camera and were found to be between 0.5 and 1.5 mm for surfaces in a horizontal orientation. Droplet movement was spontaneous and did not require the use of chemical coatings. The theoretical design and construction of surface tension gradients were also explored in this work by calculating the minimum gradient needed for droplet movement on a horizontal surface using Wenzel's model of wetting. The results of this study suggest that microstructural patterning could be used to help reduce condensate retention on metallic fins such as those used in heat exchangers in heating, ventilation, air-conditioning, and refrigeration (HVAC&R) applications. PMID:23971937

  2. Effects of erbium:yttrium-aluminum-garnet and neodymium:yttrium-aluminum-garnet laser hypersensitivity treatment parameters on the bond strength of self-etch adhesives.

    PubMed

    Yazici, E; Gurgan, S; Gutknecht, N; Imazato, S

    2010-07-01

    This in vitro study evaluated the shear bond strength (SBS) of two self-etch adhesives to coronal and root dentin treated with erbium:yttrium-aluminum-garnet (Er:YAG) or neodymium:yttrium-aluminum-garnet (Nd:YAG) lasers for dentin hypersensitivity. The coronal and root dentin surfaces of 60 extracted human cuspids were divided into three groups (n = 20): (1) control (without treatment); (2) treated with Er:YAG; (3) treated with Nd:YAG laser and a one-step (S3) or two-step self-etch adhesive (SE). A nano-composite was applied and SBS tests were performed. The mean SBS values were calculated, failure modes were determined, and data were subjected to statistical analysis (P = 0.05). Control/SE exhibited higher values than did control/S3 and Nd:YAG/S3 on coronal dentin (P < 0.05). No significant differences were observed between the SE and S3 groups in root dentin (P > 0.05). Comparisons of two dentin substrates did not show any difference except control/SE (P < 0.05). The failure modes were mainly adhesive. The SBSs of self-etch adhesives to Er:YAG or Nd:YAG laser-treated surfaces were comparable with control for both coronal and root dentin. PMID:19475475

  3. Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

    SciTech Connect

    Khuat, Vanthanh; Chen, Tao; Gao, Bo; Si, Jinhai Ma, Yuncan; Hou, Xun

    2014-06-16

    Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave.

  4. Micromachining soda-lime glass by femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Jia, Wei; Yu, Jian; Chai, Lu; Wang, Ching-Yue

    2015-08-01

    The physical process of forming a modified region in soda-lime glass was investigated using 1 kHz intense femtosecond laser pulses from a Ti: sapphire laser at 775 nm. Through the modifications induced by the femtosecond laser radiation using selective chemical etching techniques, we fabricated reproducible and defined microstructures and further studied their morphologies and etching properties. Moreover, a possible physical mechanism for the femtosecond laser modification in soda-lime glass was proposed.

  5. Histometric analysis and topographic characterization of cp Ti implants with surfaces modified by laser with and without silica deposition.

    PubMed

    Souza, Francisley Á; Queiroz, Thallita P; Sonoda, Celso K; Okamoto, Roberta; Margonar, Rogério; Guastaldi, Antônio C; Nishioka, Renato S; Garcia Júnior, Idelmo R

    2014-11-01

    Biologic behavior of the bone tissue around implants with four different surfaces was evaluated. The surfaces were: modified by laser (LS); modified by laser with sodium silicate deposition (SS); and commercially available surfaces modified by acid etching (AS) and machined surface (MS). Topographic characterization of the surfaces was performed by scanning electron microscopy (SEM)- energy dispersive X-ray spectrometry (EDX) before experimental surgery. Thirty rabbits received 60 implants in their right and left tibias, 1 implant of each surface being placed in each tibia. The analyzed periods were 4, 8, and 12 weeks postoperatively. Histometric analysis was performed evaluating bone interface contact (BIC) and bone area (BA). The results obtained were submitted to the analysis of variance and the Tukey t-test. The elemental mapping was evaluated by means of SEM at 4 weeks postoperatively. The topographic characterization showed differences between the analyzed surfaces. Generally, the BIC and BA of LS and SS implants were statistically higher than those of AS and MS in most of the analyzed periods. Elemental mapping showed high peaks of calcium and phosphorous in all groups. Based on the present methodology, it may be concluded that experimental modifications LS and SS accelerated the stages of the bone tissue repair process around the implants, providing the highest degree of osseointegration. PMID:24664938

  6. Status of the GEC RF Reference Cell/laser diagnostics of plasma etching discharges

    SciTech Connect

    Hargis, P.J. Jr.; Greenerg, K.E.; Miller, P.A.

    1991-01-01

    The Gaseous Electronics Conference (GEC) RF Reference Cell was developed to enhance studies of radiofrequency (rf) discharge systems analogous to those used to fabricate microelectronic devices. The Reference Cell concept includes both a standard discharge-chamber design and a set of diagnostic tools that can be used to verify that different Cells behave similarly. Voltage and current measurements in Reference Cells in the United States show that, with proper care, plasmas that behave in a similar manner can be generated in different Cells. The versatility of the Reference Cell is illustrated by results on the use of planar laser-induced fluorescence imaging to obtain two-dimensional spatial profiles of SO{sub 2} in an SF{sub 6}/O{sub 2} rf discharge. 4 refs., 5 figs.

  7. Study of the reactive ion etching of 6H-SiC and 4H-SiC in SF 6/Ar plasmas by optical emission spectroscopy and laser interferometry

    NASA Astrophysics Data System (ADS)

    Camara, N.; Zekentes, K.

    2002-11-01

    Optical emission spectroscopy (OES) and laser interferometry (LI) were investigated as monitoring methods during reactive ion etching (RIE) of hexagonal SiC in SF 6/Ar gas mixtures. The etch rate and the surface roughness were monitored by LI, while at the same time OES monitored the intensity of the fluorine-related 704 nm line. It was found that the etch rate is directly related to the above intensity and not to the self-induced DC-bias. This explains the very high etch rates obtained at high pressures (150-250 mTorr) despite the low DC-bias values (˜100 V). Etch rates higher than 400 nm/min were achieved for 400 W of rf power.

  8. Cell interactions with laser-modified polymer surfaces.

    PubMed

    Ball, M D; Sherlock, R; Glynn, T

    2004-04-01

    The performance of a polymeric biomaterial depends on the bulk and surface properties. Often, however, the suitability of the surface properties is compromised in favour of the bulk properties. Altering the surface properties of these materials will have a profound effect on how cells and proteins interact with them. Here, we have used an excimer laser to modify the surface wettability of nylon 12. The surface treatment is rapid, cost-effective and can cause reproducible changes in the surface structure of the polymers. Polymers were treated with short wavelength ( < 200 nm) UV light. These wavelengths have sufficient photon energy (6.4eV) to cause bond scission at the material surface. This results in a surface reorganisation with incorporation of oxygen. Surface wettability changes were confirmed using contact angle measurements. Cell interactions with the surfaces were examined using 3T3 fibroblast and HUVEC cells. Cells morphology was examined using a confocal laser scanning microscope (CLSM). Cell activity and cell number on the treated nylon were assessed using biochemical assays for up to seven days. Both fibroblasts and endothelial cells initially proliferated better on treated compared with untreated samples. However, over seven days activity decreased for both cell types on the control samples and endothelial cell activity and cell number also decreased on the treated polymer. PMID:15332615

  9. A novel approach to pseudopodia proteomics: excimer laser etching, two-dimensional difference gel electrophoresis, and confocal imaging

    PubMed Central

    Mimae, Takahiro; Ito, Akihiko; Hagiyama, Man; Nakanishi, Jun; Hosokawa, Yoichiroh; Okada, Morihito; Murakami, Yoshinori; Kondo, Tadashi

    2014-01-01

    Pseudopodia are actin-rich ventral cellular protrusions shown to facilitate the migration and metastasis of tumor cells. Here, we present a novel approach to perform pseudopodia proteomics. Tumor cells growing on porous membranes extend pseudopodia into the membrane pores. In our method, cell bodies are removed by horizontal ablation at the basal cell surface with the excimer laser while pseudopodia are left in the membrane pores. For protein expression profiling, whole cell and pseudopodia proteins are extracted with a lysis buffer, labeled with highly sensitive fluorescent dyes, and separated by two-dimensional gel electrophoresis. Proteins with unique expression patterns in pseudopodia are identified by mass spectrometry. The effects of the identified proteins on pseudopodia formation are evaluated by measuring the pseudopodia length in cancer cells with genetically modified expression of target proteins using confocal imaging. This protocol allows global identification of pseudopodia proteins and evaluation of their functional significance in pseudopodia formation within one month. PMID:25309719

  10. Effect of erbium-doped: yttrium, aluminium and garnet laser irradiation on the surface microstructure and roughness of sand-blasted, large grit, acid-etched implants

    PubMed Central

    Lee, Ji-Hun; Kwon, Young-Hyuk; Herr, Yeek; Shin, Seung-Il

    2011-01-01

    Purpose The present study was performed to evaluate the effect of erbium-doped: yttrium, aluminium and garnet (Er:YAG) laser irradiation on sand-blasted, large grit, acid-etched (SLA) implant surface microstructure according to varying energy levels and application times of the laser. Methods The implant surface was irradiated by the Er:YAG laser under combined conditions of 100, 140, or 180 mJ/pulse and an application time of 1 minute, 1.5 minutes, or 2 minutes. Scanning electron microscopy (SEM) was used to examine the surface roughness of the specimens. Results All experimental conditions of Er:YAG laser irradiation, except the power setting of 100 mJ/pulse for 1 minute and 1.5 minutes, led to an alteration in the implant surface. SEM evaluation showed a decrease in the surface roughness of the implants. However, the difference was not statistically significant. Alterations of implant surfaces included meltdown and flattening. More extensive alterations were present with increasing laser energy and application time. Conclusions To ensure no damage to their surfaces, it is recommended that SLA implants be irradiated with an Er:YAG laser below 100 mJ/pulse and 1.5 minutes for detoxifying the implant surfaces. PMID:21811689

  11. The Influence of Low-Level Laser on Osseointegration Around Machined and Sandblasted Acid-Etched Implants: A Removal Torque and Histomorphometric Analyses.

    PubMed

    Teixeira, Eduardo Rolim; Torres, Marco Antônio Rambo Osório; Meyer, Kleber Ricardo Monteiro; Zani, Sabrina Rebollo; Shinkai, Rosemary Sadami Arai; Grossi, Márcio Lima

    2015-08-01

    Evaluation of the influence of laser application on osseointegration around implants with different surface characteristics is limited. This study aims to evaluate the influence of low-level lasers on the early stages of osseointegration. Ninety-six external hex implants (3.75 mm × 5.0 mm) were placed in 24 rabbits-one machined and one sandblasted acid-etched per tibia. The rabbits were later divided into the laser group, which received a total dose of 24 J/cm(2) of gallium-aluminum-arsenide laser over 15 days, and a control group. At 16 and 30 days after surgery, removal torque and histomorphometric analyses were performed. No statistical differences in removal torque or histomorphometric analyses were verified between laser and control groups regardless of implant surface (P > .05). Time was the only variable presenting significant differences between measurements (P < .05). Low-level laser had no significant short-term effect on bone-to-implant contact and removal torque values regardless of implant surface characteristics. PMID:23834724

  12. Surface characterizations of laser modified biomedical grade NiTi shape memory alloys.

    PubMed

    Pequegnat, A; Michael, A; Wang, J; Lian, K; Zhou, Y; Khan, M I

    2015-05-01

    Laser processing of shape memory alloys (SMAs) promises to enable the multifunctional capabilities needed for medical device applications. Prior to clinical implementation, the surface characterisation of laser processed SMA is essential in order to understand any adverse biological interaction that may occur. The current study systematically investigated two Ni-49.8 at.% Ti SMA laser processed surface finishes, including as-processed and polished, while comparing them to a chemically etched parent material. Spectrographic characterisation of the surface included; X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), and Raman spectroscopy. Corrosion performance and Ni ion release were also assessed using potentiodynamic cyclic polarization testing and inductively coupled plasma optical emission spectroscopy (ICP-OES), respectively. Results showed that surface defects, including increased roughness, crystallinity and presence of volatile oxide species, overshadowed any possible performance improvements from an increased Ti/Ni ratio or inclusion dissolution imparted by laser processing. However, post-laser process mechanical polishing was shown to remove these defects and restore the performance, making it comparable to chemically etched NiTi material. PMID:25746282

  13. Phantom Study of a New Laser-Etched Needle for Improving Visibility During Ultrasonography-Guided Lumbar Medial Branch Access With Novices

    PubMed Central

    2016-01-01

    Objective To compare the visibility and procedural parameters between a standard spinal needle and a new laser-etched needle (LEN) in real-time ultrasonography guided lumbar medial branch access in a phantom of the lumbosacral spine. Methods We conducted a prospective single-blinded observational study at a rehabilitation medicine center. A new model of LEN was manufactured with a standard 22-gauge spinal needle and a laser etching machine. Thirty-two inexperienced polyclinic medical students performed ultrasonography-guided lumbar medial branch access using both a standard spinal needle and a LEN with scanning protocol. The outcomes included needle visibility score, needle elapsed time, first-pass success rate, and number of needle sticks. Results The LEN received significantly better visibility scores and shorter needle elapsed time compared to the standard spinal needle. First-pass success rate and the number of needle sticks were not significantly different between needles. Conclusion A new LEN is expected to offer better visibility and enable inexperienced users to perform an ultrasonography-guided lumbar medial branch block more quickly. However, further study of variables may be necessary for clinical application. PMID:27606263

  14. Simplified Etching

    ERIC Educational Resources Information Center

    Saranovitz, Norman S.

    1969-01-01

    The process for making a celluoid etching (drypaint technique) is feasible for the high school art room because the use of acid is avoided. The procedure outlined includes; 1) preparation of the plate, 2) inking the plate, 3) printing the plate, 4) tools necessary for the preceding. (BF)

  15. Laser modified alumina: A computational and experimental analysis

    NASA Astrophysics Data System (ADS)

    Moncayo, Marco Antonio

    Laser surface modification involves rapid melting and solidification is an elegant technique used for locally tailoring the surface morphology of alumina in order to enhance its abrasive characteristics. COMSOL Multiphysics RTM based heat transfer modeling and experimental approaches were designed and used in this study for single and multiple laser tracks to achieve densely-packed multi-facet grains via temperature history, cooling rate, solidification, scanning electron micrographs, and wear rate. Multifacet grains were produced at the center of laser track with primary dendrites extending toward the edge of single laser track. The multiple laser tracks study indicates the grain/dendrite size increases as the laser energy density increases resulting in multiplying the abrasive edges which in turn enhance the abrasive qualities.

  16. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  17. An investigation of phase transformation and crystallinity in laser surface modified H13 steel

    NASA Astrophysics Data System (ADS)

    Aqida, S. N.; Brabazon, D.; Naher, S.

    2013-03-01

    This paper presents a laser surface modification process of AISI H13 tool steel using 0.09, 0.2 and 0.4 mm size of laser spot with an aim to increase hardness properties. A Rofin DC-015 diffusion-cooled CO2 slab laser was used to process AISI H13 tool steel samples. Samples of 10 mm diameter were sectioned to 100 mm length in order to process a predefined circumferential area. The parameters selected for examination were laser peak power, overlap percentage and pulse repetition frequency (PRF). X-ray diffraction analysis (XRD) was conducted to measure crystallinity of the laser-modified surface. X-ray diffraction patterns of the samples were recorded using a Bruker D8 XRD system with Cu K α ( λ=1.5405 Å) radiation. The diffraction patterns were recorded in the 2 θ range of 20 to 80°. The hardness properties were tested at 981 mN force. The laser-modified surface exhibited reduced crystallinity compared to the un-processed samples. The presence of martensitic phase was detected in the samples processed using 0.4 mm spot size. Though there was reduced crystallinity, a high hardness was measured in the laser-modified surface. Hardness was increased more than 2.5 times compared to the as-received samples. These findings reveal the phase source of the hardening mechanism and grain composition in the laser-modified surface.

  18. 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

    NASA Astrophysics Data System (ADS)

    Cheng-Ao, Yang; Yu, Zhang; Yong-Ping, Liao; Jun-Liang, Xing; Si-Hang, Wei; Li-Chun, Zhang; Ying-Qiang, Xu; Hai-Qiao, Ni; Zhi-Chuan, Niu

    2016-02-01

    We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 °C with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature. Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB643903 and 2013CB932904), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), the National Natural Science Foundation of China (Grant Nos. 61435012, 61274013, 61306088, and 61290303), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB01010200).

  19. Microfabrication of Polyethylene Using Femtosecond Ti:sapphire Laser and Nanosecond ArF Laser

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Inoue, Narumi

    2003-09-01

    We used a 790 nm, 130 fs Ti:sapphire laser, its second harmonics and a 193 nm, 23 ns ArF laser to ablate polyethylene. The 790 nm fs laser could yield a pattern of etched holes in the exposed areas, and no traces of molten material could be observed in the etched areas. Moreover, the fs laser did not change the chemical composition of the ablated surface. We also mixed a faint beam of the second harmonics (395 nm) with the 790 nm fs laser, thus increasing the etching rate. The second harmonics led to the formation of a modified layer in polyethylene, and it absorbed the subsequent 790 nm fs laser effectively. The chemical composition of the ablated surface in this case too, remained unchanged. Using the 193 nm ns laser, aluminum films could be formed selectively only on the ablated areas, by a combination of vacuum evaporation and ultrasonic washing.

  20. Etching Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1983-01-01

    20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

  1. Modified porous silica antireflective coatings with laser damage resistance for Ti:sapphire

    NASA Astrophysics Data System (ADS)

    Jia, Qiaoying; Li, Haiyuan; Liu, Ruijun; Tang, Yongxing; Jiang, Zhonghong

    2005-04-01

    Porous SiO2 antireflective (AR) coatings are prepared from the colloidal silica solution modified with methyltriethoxysilane (MTES) based on the sol-gel route. The viscosity of modified silica suspensions changes but their stability keeps when MTES is introduced. The refractive indices of modified coatings vary little after bake treatment from 100 to 150 Celsius. The modified silica coatings on Ti:sapphire crystal, owning good homogeneity, display prominent antireflective effect within the laser output waveband (750-850 nm) of Ti:sapphire lasers, with average transmission above 98.6%, and own laser induced damage thresholds (LIDTs) of more than 2.2 J/cm2 at 800 nm with the pulse duration of 300 ps.

  2. Excimer laser ablation of thick SiOx-films: Etch rate measurements and simulation of the ablation threshold

    NASA Astrophysics Data System (ADS)

    Ihlemann, J.; Meinertz, J.; Danev, G.

    2012-08-01

    Excimer laser ablation of 4.5 μm thick SiOx-films with x ≈ 1 is investigated at 193 nm, 248 nm, and 308 nm. Strong absorption enables precisely tunable removal depths. The ablation rates correlate with laser penetration depths calculated from low level absorption coefficients. The experimental ablation thresholds are in agreement with numerical simulations on the basis of linear absorption and one-dimensional heat flow. This behaviour is similar to that of strongly UV-absorbing polymers, leading to well controllable micro machining prospects. After laser processing, SiOx can be converted to SiO2, opening a route to laser based fabrication of micro optical components.

  3. Modified trocar with laser diode for instrument guidance.

    PubMed

    Rajab, Taufiek Konrad

    2013-12-01

    Laparoscopic instruments that are newly inserted into trocars are initially outside the surgeon's endoscopic field of view. This can make it difficult to accurately position the instrument at the operative site and presents a potential risk to patients since the tip of the instrument could potentially perforate organs and blood vessels while it is advanced blindly. To solve this problem, I have designed a trocar that incorporates a laser pointer to guide laparoscopic instruments while they are outside the endoscopic field of view. The laser dot is projected along the long axis of the trocar. This allows the surgeon to instantly determine the direction and target of the introduced instrument. Furthermore, the projected laser dot serves as evidence of an unobstructed path from the trocar to the target. This modification improves safety in laparoscopic surgery. PMID:23793574

  4. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  5. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  6. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  7. Using femtosecond lasers to modify sizes of gold nanoparticles

    NASA Astrophysics Data System (ADS)

    da Silva Cordeiro, Thiago; Almeida de Matos, Ricardo; Silva, Flávia Rodrigues de Oliveira; Vieira, Nilson D.; Courrol, Lilia C.; Samad, Ricardo E.

    2016-04-01

    Metallic nanoparticles are important on several scientific, medical and industrial areas. The control of nanoparticles characteristics has fundamental importance to increase the efficiency on the processes and applications in which they are employed. The metallic nanoparticles present specific surface plasmon resonances (SPR). These resonances are related with the collective oscillations of the electrons presents on the metallic nanoparticle. The SPR is determined by the potential defined by the nanoparticle size and geometry. There are several methods of producing gold nanoparticles, including the use of toxic chemical polymers. We already reported the use of natural polymers, as for example, the agar-agar, to produce metallic nanoparticles under xenon lamp irradiation. This technique is characterized as a "green" synthesis because the natural polymers are inoffensive to the environment. We report a technique to produce metallic nanoparticles and change its geometrical and dimensional characteristics using a femtosecond laser. The 1 ml initial solution was irradiate using a laser beam with 380 mW, 1 kHz and 40 nm of bandwidth centered at 800 nm. The setup uses an Acousto-optic modulator, Dazzler, to change the pulses spectral profiles by introduction of several orders of phase, resulting in different temporal energy distributions. The use of Dazzler has the objective of change the gold nanoparticles average size by the changing of temporal energy distributions of the laser pulses incident in the sample. After the laser irradiation, the gold nanoparticles average diameter were less than 15 nm.

  8. Laser welding and post weld treatment of modified 9Cr-1MoVNb steel.

    SciTech Connect

    Xu, Z.

    2012-04-03

    Laser welding and post weld laser treatment of modified 9Cr-1MoVNb steels (Grade P91) were performed in this preliminary study to investigate the feasibility of using laser welding process as a potential alternative to arc welding methods for solving the Type IV cracking problem in P91 steel welds. The mechanical and metallurgical testing of the pulsed Nd:YAG laser-welded samples shows the following conclusions: (1) both bead-on-plate and circumferential butt welds made by a pulsed Nd:YAG laser show good welds that are free of microcracks and porosity. The narrow heat affected zone has a homogeneous grain structure without conventional soft hardness zone where the Type IV cracking occurs in conventional arc welds. (2) The laser weld tests also show that the same laser welder has the potential to be used as a multi-function tool for weld surface remelting, glazing or post weld tempering to reduce the weld surface defects and to increase the cracking resistance and toughness of the welds. (3) The Vicker hardness of laser welds in the weld and heat affected zone was 420-500 HV with peak hardness in the HAZ compared to 240 HV of base metal. Post weld laser treatment was able to slightly reduce the peak hardness and smooth the hardness profile, but failed to bring the hardness down to below 300 HV due to insufficient time at temperature and too fast cooling rate after the time. Though optimal hardness of weld made by laser is to be determined for best weld strength, methods to achieve the post weld laser treatment temperature, time at the temperature and slow cooling rate need to be developed. (4) Mechanical testing of the laser weld and post weld laser treated samples need to be performed to evaluate the effects of laser post treatments such as surface remelting, glazing, re-hardening, or tempering on the strength of the welds.

  9. A modified commercial Ti:sapphire laser with 4 kHz rms linewidth

    NASA Astrophysics Data System (ADS)

    Haubrich, D.; Wynands, R.

    1996-02-01

    We have modified a commercial Ti:sapphire laser to allow optical phase stabilization to an extremely stable semiconductor laser, which in turn is locked to a Doppler-free resonance in a cesium vapor cell. For time scales from 10 μs up to several hours the combined system has a rms linewidth of 4 kHz with respect to the cesium resonance. The system allows the resolution of extremely narrow resonances in a cloud of trapped atoms.

  10. Surface Modifications with Laser Synthesized Mo Modified Coating

    NASA Astrophysics Data System (ADS)

    Sun, Lu; Chen, Hao; Liu, Bo

    2013-02-01

    Mg-Cu-Al was first used to improve the surface performance of TA15 titanium alloys by means of laser cladding technique. The synthesis of hard composite coating on TA15 titanium alloy by laser cladding of Mg-Cu-Al-B4C/Mo pre-placed powders was investigated by means of scanning electron microscope, energy dispersive spectrometer and high resolution transmission electron microscope. Experimental results indicated that such composite coating mainly consisted of TiB2, TiB, TiC, Ti3Al and AlCuMg. Compared with TA15 alloy substrate, an improvement of wear resistance was observed for this composite coating due to the actions of fine grain, amorphous and hard phase strengthening.

  11. Modified Laser and Thermos cell calculations on microcomputers

    SciTech Connect

    Shapiro, A.; Huria, H.C.

    1987-01-01

    In the course of designing and operating nuclear reactors, many fuel pin cell calculations are required to obtain homogenized cell cross sections as a function of burnup. In the interest of convenience and cost, it would be very desirable to be able to make such calculations on microcomputers. In addition, such a microcomputer code would be very helpful for educational course work in reactor computations. To establish the feasibility of making detailed cell calculations on a microcomputer, a mainframe cell code was compiled and run on a microcomputer. The computer code Laser, originally written in Fortran IV for the IBM-7090 class of mainframe computers, is a cylindrical, one-dimensional, multigroup lattice cell program that includes burnup. It is based on the MUFT code for epithermal and fast group calculations, and Thermos for the thermal calculations. There are 50 fast and epithermal groups and 35 thermal groups. Resonances are calculated assuming a homogeneous system and then corrected for self-shielding, Dancoff, and Doppler by self-shielding factors. The Laser code was converted to run on a microcomputer. In addition, the Thermos portion of Laser was extracted and compiled separately to have available a stand alone thermal code.

  12. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  13. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  14. On the modified active region design of interband cascade lasers

    SciTech Connect

    Motyka, M.; Ryczko, K.; Dyksik, M.; Sęk, G.; Misiewicz, J.; Weih, R.; Dallner, M.; Kamp, M.; Höfling, S.

    2015-02-28

    Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelength operation.

  15. Thermal Conductivity Based on Modified Laser Flash Measurement

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Ban, Heng; Li, Chao; Scripa, Rosalia N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2005-01-01

    The laser flash method is a standard method for thermal diffusivity measurement. It employs single-pulse heating of one side of a thin specimen and measures the temperature response of the other side. The thermal diffusivity of the specimen can be obtained based on a one-dimensional transient heat transfer analysis. This paper reports the development of a theory that includes a transparent reference layer with known thermal property attached to the back of sample. With the inclusion of heat conduction from the sample to the reference layer in the theoretical analysis, the thermal conductivity and thermal diffusivity of sample can be extracted from the temperature response data. Furthermore, a procedure is established to select two points from the data to calculate these properties. The uncertainty analysis indicates that this method can be used with acceptable levels of uncertainty.

  16. White-Light Emission from Silicone Rubber Modified by 193 nm ArF Excimer Laser

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Sekine, Daisuke; Inoue, Narumi; Yamashita, Tsugito

    2007-04-01

    The photochemical surface modification of silicone ([SiO(CH3)2]n) rubber has been successfully demonstrated using a 193 nm ArF excimer laser, and white light of strong intensity was emitted upon exposure to a 325 nm He-Cd laser. The photoluminescence spectra of the modified silicone showed broad peaks centered at 410, 550, and 750 nm wavelengths. The modified surface was carbon-free silicon oxide, and the chemical composition ratio of O/Si was approximately 2. However, the surface was not silica glass (SiO2), as clarified by IR spectroscopy. Instead, nanometer-size particles of silicon oxide were formed on the surface of the modified silicone rubber.

  17. Wear rate control of peek surfaces modified by femtosecond laser

    NASA Astrophysics Data System (ADS)

    Hammouti, S.; Pascale-Hamri, A.; Faure, N.; Beaugiraud, B.; Guibert, M.; Mauclair, C.; Benayoun, S.; Valette, S.

    2015-12-01

    This paper presents the effect of laser texturing on the tribological properties of PEEK surfaces under a ball-on-flat contact configuration. Thus, surfaces with circular dimples of various diameters and depth were created. Tests were conducted with a normal load of 5 N and a sliding velocity of 0.01 m s-1, using bovine calf serum at 37.5 °C as a lubricant. The tribological conditions including the sliding frequency and the lubricant viscosity indicate that tests were performed under boundary lubrication regime. Results showed that discs with higher dimple depth exhibited higher friction coefficient and caused more abrasive wear on the ball specimen. Nevertheless, tribosystems (ball and disc) with dimpled disc surfaces showed a higher wear resistance. In the frame of our experiments, wear rates obtained for tribosystems including dimpled surfaces were 10 times lower than tribosystems including limited patterned or untextured surfaces. Applications such as design of spinal implants may be concerned by such a surface treatment to increase wear resistance of components.

  18. Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films.

    PubMed

    Piazzi, Marco; Croin, Luca; Vittone, Ettore; Amato, Giampiero

    2012-12-01

    The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 950°C-1000°C) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample. PMID:23503582

  19. Corrosion resistance of the AISI 304, 316 and 321 stainless steel surfaces modified by laser

    NASA Astrophysics Data System (ADS)

    Szubzda, B.; Antończak, A.; Kozioł, P.; Łazarek, Ł.; Stępak, B.; Łęcka, K.; Szmaja, A.; Ozimek, M.

    2016-02-01

    The article presents the analysis results of the influence of laser fluence on physical and chemical structure and corrosion resistance of stainless steel surfaces modified by irradiating with nanosecond-pulsed laser. The study was carried out for AISI 304, AISI 316 and AISI 321 substrates using Yb:glass fiber laser. All measurements were made for samples irradiated in a broad range of accumulated fluence (10÷400 J/cm2). The electrochemical composition (by EDX) and surface morphology (by SEM) of the prepared surfaces were carried out. Finally, corrosion resistance was analyzed by a potentiodynamic electrochemical test. The obtained results showed very high corrosion resistance for samples made by fluency of values lower than 100 J/cm2. In this case, higher values of corrosion potentials and breakdown potentials were observed. A correlation between corrosion phenomena, the range of laser power (fluence) and the results of chemical and structural tests were also found.

  20. Laser-Modified Black Titanium Oxide Nanospheres and Their Photocatalytic Activities under Visible Light.

    PubMed

    Chen, Xing; Zhao, Dongxu; Liu, Kewei; Wang, Chunrui; Liu, Lei; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2015-07-29

    A facile pulse laser ablation approach for preparing black titanium oxide nanospheres, which could be used as photocatalysts under visible light, is proposed. The black titanium oxide nanospheres are prepared by pulsed-laser irradiation of pure titanium oxide in suspended aqueous solution. The crystalline phases, morphology, and optical properties of the obtained nanospheres are characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray photoelectron spectroscopy (XPS), and UV-vis-NIR diffuse reflectance spectroscopy. It is shown that high-energy laser ablation of titanium oxide suspended solution benefited the formation of Ti(3+) species and surface disorder on the surface of the titanium oxide nanospheres. The laser-modified black titanium oxide nanospheres could absorb the full spectrum of visible light, thus exhibiting good photocatalytic performance under visible light. PMID:26132217

  1. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  2. Solid-state dye laser with modified poly(methyl methacrylate)-doped active elements

    NASA Astrophysics Data System (ADS)

    Maslyukov, A.; Sokolov, S.; Kaivola, M.; Nyholm, K.; Popov, S.

    1995-03-01

    Laser generation with modified poly(methyl methacrylate) (MPMMA)-doped matrices with several different types of Rhodamine-based dyes was obtained. Pumping with a frequency-doubled Q-switched Nd:YAG laser was used. During the experiments, high conversion efficiency was achieved. The strong nonlinear dependence of the operating lifetime and the conversion efficiency of material tested on the pump-pulse-repetition rate was observed. Possible mechanisms responsible for the conversion-efficiency drop and the useful lifetime of the material are discussed.

  3. Modified grating-based external cavity diode laser for simultaneous dual-wavelengths operation

    NASA Astrophysics Data System (ADS)

    Khorsandi, Alireza; Sabouri, Saeed Ghavami; Fathi, Somaieh; Asadnia-Jahromi, Marzieh

    2011-07-01

    We have reported a modified V-shaped external cavity, which is constructed around a commercial diode laser operating at a center wavelength of λ=785 nm by adding a new coated glass plate with about 50% reflectivity to the cavity. This allows simultaneous dual-wavelengths operation in the vicinity of Δ νmin=0.18 THz to Δ νmax=0.22 THz, which can be used as laser source for terahertz generation either for semiconductor devices or nonlinear schemes.

  4. Study of photoinduced absorption by the method of modified laser photothermal radiometry

    SciTech Connect

    Skvortsov, L A; Maksimov, E M; Tuchkov, A A

    2008-10-31

    The application of the method of modified laser photothermal radiometry for studying the photoinduced absorption in thin films is considered. The sensitivity of the method is estimated. The mechanism of induced near-IR absorption in titanium dioxide films is proposed and the nature of surface defects responsible for this process is explained. It is shown that kinetic equations describing monomolecular recombination are consistent with the experimental dependences for the thermal activation energy of defects equal to 0.17{+-}0.04 eV. (laser applications and other topics in quantum electronics)

  5. Enhancement of RIE: etched Diffractive Optical Elements surfaces by using Ion Beam Etching

    NASA Astrophysics Data System (ADS)

    Schmitt, J.; Bischoff, Ch.; Rädel, U.; Grau, M.; Wallrabe, U.; Völklein, F.

    2015-09-01

    Shaping of laser light intensities by using Diffractive Optical Elements allows the adaption of the incident light to its application. Fused silica is used where for example UV-light or high temperatures are mandatory. For high diffraction efficiency the quality of the etched surface areas is important. The investigation of different process parameters for Ion Beam and Reactive Ion Etching reveals that only Ion Beam Etching provides surfaces with optical quality. Measurements of the influence of the surface quality on the diffraction efficiencies prove that the surfaces generated by Reactive Ion Etching are not suitable. Due to the high selectivity of the process Reactive Ion Etching is nevertheless a reasonable choice for the fabrication of Diffractive Optical Elements. To improve the quality of the etched surfaces a post processing with Ion Beam Etching is developed. Simulations in MATLAB display that the angle dependent removal of the surface during the Ion Beam Etching causes a smoothing of the surface roughness. The positive influence of a post processing on the diffraction efficiency is outlined by measurements. The ion beam post processing leads to an increase of the etching depth. For the fabrication of high efficient Diffractive Optical Elements this has to be taken into account. The relation is investigated and transferred to the fabrication of four-level gratings. Diffraction efficiencies up to 78 % instead of the ideal 81 % underline the practicability of the developed post processing.

  6. Alkaline etch system qualification

    SciTech Connect

    Goldammer, S.E.; Pemberton, S.E.; Tucker, D.R.

    1997-04-01

    Based on the data from this qualification activity, the Atotech etch system, even with minimum characterization, was capable of etching production printed circuit products as good as those from the Chemcut system. Further characterization of the Atotech system will improve its etching capability. In addition to the improved etch quality expected from further characterization, the Atotech etch system has additional features that help reduce waste and provide for better consistency in the etching process. The programmable logic controller and computer will allow operators to operate the system manually or from pre-established recipes. The evidence and capabilities of the Atotech system made it as good as or better than the Chemcut system for etching WR products. The Printed Wiring Board Engineering Department recommended that the Atotech system be released for production. In December 1995, the Atotech system was formerly qualified for production.

  7. Preparation of platinum modified titanium dioxide nanoparticles with the use of laser ablation in water.

    PubMed

    Siuzdak, K; Sawczak, M; Klein, M; Nowaczyk, G; Jurga, S; Cenian, A

    2014-08-01

    We report on the preparation method of nanocrystalline titanium dioxide modified with platinum by using nanosecond laser ablation in liquid (LAL). Titania in the form of anatase crystals has been prepared in a two-stage process. Initially, irradiation by laser beam of a titanium metal plate fixed in a glass container filled with deionized water was conducted. After that, the ablation process was continued, with the use of a platinum target placed in a freshly obtained titania colloid. In this work, characterization of the obtained nanoparticles, based on spectroscopic techniques--Raman, X-ray photoelectron and UV-vis reflectance spectroscopy--is given. High resolution transmission electron microscopy was used to describe particle morphology. On the basis of photocatalytic studies we observed the rate of degradation process of methylene blue (MB) (a model organic pollution) in the presence of Pt modified titania in comparison to pure TiO2--as a reference case. Physical and chemical mechanisms of the formation of platinum modified titania are also discussed here. Stable colloidal suspensions containing Pt modified titanium dioxide crystalline anatase particles show an almost perfect spherical shape with diameters ranging from 5 to 30 nm. The TiO2 nanoparticles decorated with platinum exhibit much higher (up to 30%) photocatalytic activity towards the degradation of MB under UV illumination than pure titania. PMID:24937772

  8. In vitro mesenchymal stem cell response to a CO2 laser modified polymeric material.

    PubMed

    Waugh, D G; Hussain, I; Lawrence, J; Smith, G C; Cosgrove, D; Toccaceli, C

    2016-10-01

    With an ageing world population it is becoming significantly apparent that there is a need to produce implants and platforms to manipulate stem cell growth on a pharmaceutical scale. This is needed to meet the socio-economic demands of many countries worldwide. This paper details one of the first ever studies in to the manipulation of stem cell growth on CO2 laser surface treated nylon 6,6 highlighting its potential as an inexpensive platform to manipulate stem cell growth on a pharmaceutical scale. Through CO2 laser surface treatment discrete changes to the surfaces were made. That is, the surface roughness of the nylon 6,6 was increased by up to 4.3μm, the contact angle was modulated by up to 5° and the surface oxygen content increased by up to 1atom %. Following mesenchymal stem cell growth on the laser treated samples, it was identified that CO2 laser surface treatment gave rise to an enhanced response with an increase in viable cell count of up to 60,000cells/ml when compared to the as-received sample. The effect of surface parameters modified by the CO2 laser surface treatment on the mesenchymal stem cell response is also discussed along with potential trends that could be identified to govern the mesenchymal stem cell response. PMID:27287173

  9. MR-Guided Laser-Induced Thermotherapy of the Infratemporal Fossa and Orbit in Malignant Chondrosarcoma via a Modified Technique

    SciTech Connect

    Vogl, Thomas J.; Mack, Martin G.; Straub, Ralf; Eichler, Katrin; Zangos, Stephan

    2001-12-15

    A 76-year-old patient presented with a recurrent mass of a malignant chondrosarcoma in the right infratemporal fossa and in the left maxillary sinus with orbital invasion. The patient was treated with a palliative intention with MR-guided laser-induced thermotherapy using a modified applicator technique. Following treatment clinical symptoms improved and MRI revealed complete laser-induced tumor necrosis.

  10. Thermal Property Measurement of Semiconductor Melt using Modified Laser Flash Method

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalla N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    This study further developed standard laser flash method to measure multiple thermal properties of semiconductor melts. The modified method can determine thermal diffusivity, thermal conductivity, and specific heat capacity of the melt simultaneously. The transient heat transfer process in the melt and its quartz container was numerically studied in detail. A fitting procedure based on numerical simulation results and the least root-mean-square error fitting to the experimental data was used to extract the values of specific heat capacity, thermal conductivity and thermal diffusivity. This modified method is a step forward from the standard laser flash method, which is usually used to measure thermal diffusivity of solids. The result for tellurium (Te) at 873 K: specific heat capacity 300.2 Joules per kilogram K, thermal conductivity 3.50 Watts per meter K, thermal diffusivity 2.04 x 10(exp -6) square meters per second, are within the range reported in literature. The uncertainty analysis showed the quantitative effect of sample geometry, transient temperature measured, and the energy of the laser pulse.

  11. Assessment of Microleakage of Class V Composite Resin Restoration Following Erbium-Doped Yttrium Aluminum Garnet (Er:YAG) Laser Conditioning and Acid Etching with Two Different Bonding Systems

    PubMed Central

    Arbabzadeh Zavareh, Farahnaz; Samimi, Pouran; Birang, Reza; Eskini, Massoumeh; Bouraima, Stephane Ayoub

    2013-01-01

    Introduction: The use of laser for cavity preparation or conditioning of dentin and enamelsurfaces as an alternative for dental tissue acid-etch have increased in recent years. Theaim of this in vitro study was to compare microleakage at enamel-composite and dentincompositeinterfaces following Erbium-Doped Yttrium Aluminum Garnet(Er:YAG) laserconditioning or acid-etching of enamel and dentin, hybridized with different bonding systems. Methods: Class V cavities were prepared on the lingual and buccal surfaces of 50 recentlyextracted intact human posterior teeth with occlusal margin in the enamel and gingival marginin the dentin. The cavities were randomly assigned to five groups: group1:conditioned withlaser (Energy=120mJ, Frequency=10Hz, Pulse duration=100μs for Enamel and Energy=80mJ,Frequency=10Hz, Pulse duration=100μs for Dentin) + Optibond FL, group2:conditioned withlaser + etching with 35% phosphoric acid + Optibond FL, group3:conditioned with laser+ Clearfil SE Bond, group 4 (control):acid etched with 35% phosphoric acid + OptibondFL, group 5 (control): Clearfil SE Bond. All cavities were restored using Point 4 compositeresin. All samples were stored in distilled water at 37°c for 24 h, then were thermocycled for500 cycles and immersed in 50% silver nitrate solution for 24 h. The teeth were sectionedbucco-lingually to evaluate the dye penetration. Kruskal-Wallis & Mann-Whitney testswere used for statistical analysis. Results: In occlusal margins, the least microleakage showed in groups 2, 4 and 5. Themaximum microleakage was observed in group 3 (P=0.009). In gingival margins, the leastmicroleakage was recorded in group2, while the most microleakage was found in group5 (P=0.001). Differences between 5 study groups were statistically significant (P<0.05).The microleakage scores were higher at the gingival margins. Conclusion: The use of the Er:YAG laser for conditioning with different dentin adhesivesystems influenced the marginal sealing of composite resin

  12. Effect of laser power on the microstructural behaviour and strength of modified laser deposited Ti6Al4V+Cu alloy for medical application

    NASA Astrophysics Data System (ADS)

    Erinosho, Mutiu F.; Akinlabi, Esther T.

    2016-03-01

    The excellent biocompatibility property of Grade 5 titanium alloy has made its desirability largely increasing in the field of biomedical. The titanium alloy (Ti6Al4V) was modified with the addition of 3 weight percent (wt %) copper via a laser deposition process using the Ytterbium fiber laser with a wavelength of 1.047 μm. Therefore, this paper presents the effect of laser power on the microstructural behaviour and strength of the modified Ti6Al4V+Cu alloy. The laser powers were varied between 600 W and 1600 W respectively while all other parameters such as the scanning speed, powder flow rates and gas flow rates were kept constant. The melt pool and width of the deposited alloy increases as the laser power was increased. The α-lamella was observed to be finer at low laser power, and towards the fusion zone, Widmanstettan structures were fused and become smaller; and showing an evidence of α-martensite phases. The strength of the modified alloy was derived from the hardness values. The strength was observed to increase initially to a point as the laser power increases and afterwards decreased as the laser power was further increased. The improved Ti6Al4V+Cu alloy can be anticipated for biomedical application.

  13. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect

    Posseme, N. Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  14. Laser spot tracking based on modified circular Hough transform and motion pattern analysis.

    PubMed

    Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

    2014-01-01

    Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas-Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development. PMID:25350502

  15. Modified Laser Flash Method for Thermal Properties Measurements and the Influence of Heat Convection

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalia N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    The study examined the effect of natural convection in applying the modified laser flash method to measure thermal properties of semiconductor melts. Common laser flash method uses a laser pulse to heat one side of a thin circular sample and measures the temperature response of the other side. Thermal diffusivity can be calculations based on a heat conduction analysis. For semiconductor melt, the sample is contained in a specially designed quartz cell with optical windows on both sides. When laser heats the vertical melt surface, the resulting natural convection can introduce errors in calculation based on heat conduction model alone. The effect of natural convection was studied by CFD simulations with experimental verification by temperature measurement. The CFD results indicated that natural convection would decrease the time needed for the rear side to reach its peak temperature, and also decrease the peak temperature slightly in our experimental configuration. Using the experimental data, the calculation using only heat conduction model resulted in a thermal diffusivity value is about 7.7% lower than that from the model with natural convection. Specific heat capacity was about the same, and the difference is within 1.6%, regardless of heat transfer models.

  16. Laser Spot Tracking Based on Modified Circular Hough Transform and Motion Pattern Analysis

    PubMed Central

    Krstinić, Damir; Skelin, Ana Kuzmanić; Milatić, Ivan

    2014-01-01

    Laser pointers are one of the most widely used interactive and pointing devices in different human-computer interaction systems. Existing approaches to vision-based laser spot tracking are designed for controlled indoor environments with the main assumption that the laser spot is very bright, if not the brightest, spot in images. In this work, we are interested in developing a method for an outdoor, open-space environment, which could be implemented on embedded devices with limited computational resources. Under these circumstances, none of the assumptions of existing methods for laser spot tracking can be applied, yet a novel and fast method with robust performance is required. Throughout the paper, we will propose and evaluate an efficient method based on modified circular Hough transform and Lucas–Kanade motion analysis. Encouraging results on a representative dataset demonstrate the potential of our method in an uncontrolled outdoor environment, while achieving maximal accuracy indoors. Our dataset and ground truth data are made publicly available for further development. PMID:25350502

  17. Laser spectroscopy for totally non-intrusive detection of oxygen in modified atmosphere food packages

    NASA Astrophysics Data System (ADS)

    Cocola, L.; Fedel, M.; Poletto, L.; Tondello, G.

    2015-04-01

    A device for measuring the oxygen concentration inside packages in modified atmosphere working in a completely non-intrusive way has been developed and tested. The device uses tunable diode laser spectroscopy in a geometry similar to a short distance LIDAR: A laser beam is sent through the top film of a food package, and the absorption is measured by detecting the light scattered by the bottom of the container or by a portion of the food herein contained. The device can operate completely in a contactless way from the package, and the distances of absorption both outside and inside the package are measured with a triangulation system. The performances of the device have been tested for various types of containers, and absolute values for the oxygen concentration have been compared with standard albeit destructive measurements.

  18. Inductively coupled plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Casalnuovo, S.A.; Rieger, D.J.; Pearton, S.J.; Constantine, C.; Barratt, C.; Karlicek, R.F. Jr.; Tran, C.; Schurman, M.

    1996-08-01

    Inductively coupled plasma (ICP) etch rates for GaN are reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power. Using a Cl{sub 2}/H{sub 2}/Ar plasma chemistry, GaN etch rates as high as 6875 A/min are reported. The GaN surface morphology remains smooth over a wide range of plasma conditions as quantified using atomic force microscopy. Several etch conditions yield highly anisotropic profiles with smooth sidewalls. These results have direct application to the fabrication of group-III nitride etched laser facets. {copyright} {ital 1996 American Institute of Physics.}

  19. Ion-Assisted Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, C. Daniel; Abraham-Shrauner, Barbara

    1996-11-01

    We analyze plasma etching of two-dimensional, long trenches where directed ions modeled by drifted Maxwellian distribution functions and isotropic neutral molecules contribute to the etch rate. Analytic expressions for the etch rates enable the user to plot the etch profiles by using standard computer packages for nonlinear first-order ordinary differential equations for the point and its slope. First, etch profiles are shown for ion-assisted etching where the thermal etching of the neutrals is enhanced by the ions. Second, we show etch profiles of a multiple layer device where one layer is n-type silicon (arsenic doped) that etches isotropically (G.S. Oehrlein, "Reactive Ion Etching," Handbook of Plasma Processing, Technology, Ed. S.M. Rossnagel, et al., Noyes Pub., NJ, 1990) The etch rates for the other layers are in the ion flux-limited regime. The lateral etching of the n-type silicon illustrates the necessity of sidewall passivation for this structure.

  20. Modified form of laser-induced interstitial thermotherapy (LITT) for the treatment of tumors

    NASA Astrophysics Data System (ADS)

    Chapman, Roxana

    1999-01-01

    LITT has been used for the treatment of benign and malignant tumors since 1983. In all cases the laser fiber/s have been arranged at or near the center of the lesion and the duration of treatment, or fiber tip type, modified in an attempt to destroy the whole tumor. During the last 8 years the author has treated 344 symptomatic patients with more than 1,400 benign uterine leiomyomas by LITT. The first 50 cases were treated traditionally with the fibers directed towards the center of the tumor. Six cases subsequently required second stage LITT and four failed and required hysterectomy. The remaining patients were either treated by directing the laser fibers towards the periphery, where feasible, or throughout the tumor in parallel 3 cm apart. The latter achieved columns of coagulated tissue 5 mm in diameter an strips of healthy tissue between, which subsequently died from tissue anoxia because blood vessels had been coagulated. Research showed that any remaining tissue was deprived of enzymes, hormone receptors and epidermal growth factor and, therefore, did not grow. It is concluded that with malignant tumors cure rather than palliation might be achieved if the laser fibers were directed towards the periphery where the blood vessels enter, and that the surrounding healthy tissue be sacrificed for about 1 cm to destroy micro-invaded tissue and tumor cells within lymphatics.

  1. Design of a silicon avalanche photodiode pixel with integrated laser diode using back-illuminated crystallographically etched silicon-on-sapphire with monolithically integrated microlens for dual-mode passive and active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.

    2010-08-01

    There is a growing need in scientific research applications for dual-mode, passive and active 2D and 3D LADAR imaging methods. To fill this need, an advanced back-illuminated silicon avalanche photodiode (APD) design is presented using a novel silicon-on-sapphire substrate incorporating a crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. This allows integration of a high quantum efficiency silicon APD with a gallium nitride (GaN) laser diode in each pixel. The pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with TMAH solution, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, φ c = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. The GaN laser diode is fabricated by epitaxial growth inside of an inverted, etched cavity in the silicon mesa. Microlenses are fabricated in the thinned, and AR-coated sapphire substrate. The APDs share a common, front-side anode contact, and laser diodes share a common cathode. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical crosstalk. SOS-APD arrays are flip-chip bump-bonded to CMOS readout ICs to produce hybrid FPAs. The square 27 μm emitter-detector pixel achieves SNR > 1 in active detection mode for Lambert surfaces at 1,000 meters.

  2. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    NASA Astrophysics Data System (ADS)

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-09-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved.

  3. Surface and biomechanical study of titanium implants modified by laser with and without hydroxyapatite coating, in rabbits.

    PubMed

    Sisti, Karin E; de Rossi, Rafael; Antoniolli, Andreia M Brochado; Aydos, Ricardo D; Guastaldi, Antonio C; Queiroz, Thallita P; Garcia, Idelmo R; Piattelli, Adriano; Tavares, Hewerson S

    2012-06-01

    Surface and biomechanical analysis of titanium implant surfaces modified by laser beam with and without hydroxyapatite. Titanium implants with 3 different surfaces were inserted into the tibias of 30 rabbits: group I (GI) machined surface (control group), group II irradiated with laser (GII), and group III irradiated with laser and hydroxyapatite coating applied-biomimetic method (GIII). Topographical analysis with scanning electron microscopy was made before surgery in the tibia. These rabbits were distributed into 2 periods of observation: 4 and 8 weeks postsurgery, after which biomechanical analysis (removal torque) was conducted. Statistical analysis used the Student-Newman-Keuls method. Surface showed roughness in GII and GIII. Biomechanical analysis demonstrated values with significant differences in GII and GIII. Titanium implants modified by laser irradiation can increase osseointegration during the initial phase. PMID:20690851

  4. Characterization of deep wet etching of glass

    NASA Astrophysics Data System (ADS)

    Iliescu, Ciprian; Chen, Bangtao; Tay, Francis E. H.; Xu, Guolin; Miao, Jianmin

    2006-01-01

    This paper presents a characterization of wet etching of glass in HF-based solutions with a focus on etching rate, masking layers and quality of the generated surface. The first important factor that affects the deep wet etching process is the glass composition. The presence of oxides such as CaO, MgO or Al IIO 3 that give insoluble products after reaction with HF can generate rough surface and modify the etching rate. A second factor that influences especially the etch rate is the annealing process (560°C / 6 hours in N II environment). For annealed glass samples an increase of the etch rate with 50-60% was achieved. Another important factor is the concentration of the HF solution. For deep wet etching of Pyrex glass in hydrofluoric acid solution, different masking layers such as Cr/Au, PECVD amorphous silicon, LPCVD polysilicon and silicon carbide are analyzed. Detailed studies show that the stress in the masking layer is a critical factor for deep wet etching of glass. A low value of compressive stress is recommended. High value of tensile stress in the masking layer (200-300 MPa) can be an important factor in the generation of the pinholes. Another factor is the surface hydrophilicity. A hydrophobic surface of the masking layer will prevent the etching solution from flowing through the deposition defects (micro/nano channels or cracks) and the generation of pinholes is reduced. The stress gradient in the masking layer can also be an important factor in generation of the notching defects on the edges. Using these considerations a special multilayer masks Cr/Au/Photoresist (AZ7220) and amorphous silicon/silicon carbide/Photoresist were fabricated for deep wet etching of a 500 μm and 1mm-thick respectively Pyrex glass wafers. In both cases the etching was performed through wafer. From our knowledge these are the best results reported in the literature. The quality of the generated surface is another important factor in the fabrication process. We notice that the

  5. Interface bonding of NiCrAlY coating on laser modified H13 tool steel surface

    NASA Astrophysics Data System (ADS)

    Reza, M. S.; Aqida, S. N.; Ismail, I.

    2016-06-01

    Bonding strength of thermal spray coatings depends on the interfacial adhesion between bond coat and substrate material. In this paper, NiCrAlY (Ni-164/211 Ni22 %Cr10 %Al1.0 %Y) coatings were developed on laser modified H13 tool steel surface using atmospheric plasma spray (APS). Different laser peak power, P p, and duty cycle, DC, were investigated in order to improve the mechanical properties of H13 tool steel surface. The APS spraying parameters setting for coatings were set constant. The coating microstructure near the interface was analyzed using IM7000 inverted optical microscope. Interface bonding of NiCrAlY was investigated by interfacial indentation test (IIT) method using MMT-X7 Matsuzawa Hardness Tester Machine with Vickers indenter. Diffusion of atoms along NiCrAlY coating, laser modified and substrate layers was investigated by energy-dispersive X-ray spectroscopy (EDXS) using Hitachi Tabletop Microscope TM3030 Plus. Based on IIT method results, average interfacial toughness, K avg, for reference sample was 2.15 MPa m1/2 compared to sample L1 range of K avg from 6.02 to 6.96 MPa m1/2 and sample L2 range of K avg from 2.47 to 3.46 MPa m1/2. Hence, according to K avg, sample L1 has the highest interface bonding and is being laser modified at lower laser peak power, P p, and higher duty cycle, DC, prior to coating. The EDXS analysis indicated the presence of Fe in the NiCrAlY coating layer and increased Ni and Cr composition in the laser modified layer. Atomic diffusion occurred in both coating and laser modified layers involved in Fe, Ni and Cr elements. These findings introduce enhancement of coating system by substrate surface modification to allow atomic diffusion.

  6. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation

    NASA Astrophysics Data System (ADS)

    Ivlev, G. D.; Kazuchits, N. M.; Prakopyeu, S. L.; Rusetsky, M. S.; Gaiduk, P. I.

    2014-12-01

    The effect of nanosecond pulses of ruby laser radiation on the structural state and morphology of the epitaxial layers of a SiO0.5Ge0.5 solid solution on silicon with the initiation of a crystal-melt phase transition has been studied by electron microscopy. Data on the photoelectric parameters of the laser-modified layers having a cellular structure owing to the segregation of germanium during the solidification of the binary melt have been derived.

  7. Laser surface and subsurface modification of sapphire using femtosecond pulses

    NASA Astrophysics Data System (ADS)

    Eberle, G.; Schmidt, M.; Pude, F.; Wegener, K.

    2016-08-01

    Two methods to process sapphire using femtosecond laser pulses are demonstrated, namely ablation (surface), and in-volume laser modification followed by wet etching (subsurface). Firstly, the single and multipulse ablation threshold is determined and compared with previous literature results. A unique application of ablation is demonstrated by modifying the entrance aperture of water jet orifices. Laser ablation exhibits advantages in terms of geometric flexibility and resolution, however, defects in the form of edge outbreaks and poor surface quality are evident. Secondly, the role of material transformation, polarisation state and formation of multi-focus structures after in-volume laser modification is investigated in order to explain their influence during the wet etching process. Laser scanning and electron microscopy as well as electron backscatter diffraction measurements supported by ion beam polishing are used to better understand quality and laser-material interactions of the two demonstrated methods of processing.

  8. Comparison of Modified-ETDRS and Mild Macular Grid Laser Photocoagulation Strategies for Diabetic Macular Edema

    PubMed Central

    2008-01-01

    Purpose To compare two laser photocoagulation techniques for treatment of diabetic macular edema (DME): modified-ETDRS direct/grid photocoagulation (mETDRS) and a, potentially milder, but potentially more extensive, mild macular grid (MMG) laser technique in which small mild burns are placed throughout the macula, whether or not edema is present, and microaneurysms are not treated directly. Methods 263 subjects (mean age 59 years) with previously untreated DME were randomly assigned to receive laser photocoagulation by mETDRS (N=162 eyes) or MMG (N=161 eyes) technique. Visual acuity, fundus photographs and OCT measurements were obtained at baseline and after 3.5, 8, and 12 months. Treatment was repeated if DME persisted. Main Outcome Measure Change in OCT measures at 12-months follow up. Results From baseline to 12 months, among eyes with baseline central subfield thickness ≥ 250 microns, central subfield thickening decreased by an average of 88 microns in the mETDRS group and decreased by 49 microns in the MMG group (adjusted mean difference: 33 microns, 95% confidence interval 5 to 61 microns, P=0.02). Weighted inner zone thickening by OCT decreased by 42 and 28 microns, respectively (adjusted mean difference: 14 microns, 95% confidence interval 1 to 27 microns, P=0.04), maximum retinal thickening (maximum of the central and four inner subfields) decreased by 66 and 39 microns, respectively (adjusted mean difference: 27 microns, 95% confidence interval 6 to 47 microns, P=0.01), and retinal volume decreased by 0.8 and 0.4 mm3, respectively (adjusted mean difference: 0.3 mm3, 95% confidence interval 0.02 to 0.53 mm3, P=0.03). At 12 months, the mean change in visual acuity was 0 letters in the mETDRS group and 2 letters worse in the MMG group (adjusted mean difference: 2 letters, 95% confidence interval −0.5 to 5 letters, P=0.10). Conclusions At 12 months after treatment, the MMG technique is less effective at reducing OCT measured retinal thickening than the

  9. Modelling of laser welding of flat parts using the modifying nanopowders

    NASA Astrophysics Data System (ADS)

    Cherepanov, A. N.; Shapeev, V. P.

    2013-06-01

    A mathematical model is formulated to describe thermophysical processes at laser welding of metal plates for the case when the modifying nanoparticles of refractory compounds have been introduced in the weld pool (the nanopowder seed cultrure fermenters — NSCF). Specially prepared nanoparticles of refractory compounds serve the crystallization centers that is they are in fact the exogenous primers, on the surface of which the individual clusters are grouped. Owing to this, one can control the process of the crystallization of the alloy and the formation of its structure and, consequently, the joint weld properties. As an example, we present the results of computing the butt welding of two plates of aluminum alloy and steel. Computed and experimental data are compared.

  10. Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes with chemically assisted ion beam etched facets

    NASA Astrophysics Data System (ADS)

    Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph; Saud Abbas, Arwa; Pourhashemi, Arash; Farrell, Robert M.; Cohen, Daniel A.; DenBaars, Steven P.; Speck, James S.; Nakamura, Shuji

    2016-02-01

    Continuous-wave blue semipolar ( 20 2 ¯ 1 ¯ ) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

  11. Microstructure and properties of borocarburized and laser-modified 17CrNi6-6 steel

    NASA Astrophysics Data System (ADS)

    Kulka, M.; Makuch, N.; Pertek, A.; Piasecki, A.

    2012-06-01

    Two-step process: carburizing followed by boriding was applied to the formation of borocarburized layers. The boride layer formed on the substrate of changeable chemical and phase composition (e.g. borocarburized layer) was called "gradient boride layer", in contrast to "typical boride layer", formed on the substrate of constant chemical and phase composition. Until now, the typical heat treatment of borocarburized layer consisted of treatment through hardening: quenching in oil and low-temperature tempering. In this paper, instead of treatment through hardening, laser-heat treatment was employed. The properties of such layer were compared to the properties of typical carburized layer. Three zones characterized the microstructure of laser-modified borocarburized layer: iron borides (FeB+Fe 2B) of modified morphology, hardened carburized zone (heat affected zone) and carburized layer without heat treatment. X-ray microanalysis indicated the increased boron concentration close to the surface due to the occurrence of a mixture of FeB and Fe 2B borides. Near to the hardened carburized zone, Fe 2B phase occurred in the laser-modified boride zone. Laser-heat treated borocarburized layer was characterized by higher microhardness at the surface than that obtained in case of carburized layer. It was caused by the iron borides (FeB+Fe 2B) occurrence at the surface, as a consequence of boriding process. However, the carburized layer was characterized by considerably larger hardened zone. Higher abrasive wear resistance, but lower low-cycle fatigue strength in comparison with the carburized layer, characterized the gradient boride layer formed by borocarburizing and laser surface modification. The indentation craters obtained on the surface of laser-heat treated borocarburized layer revealed sufficient cohesion (HF3 standard). The use of laser-modified borocarburized layers may be advantageous under conditions of high abrasive wear of mating parts. In case of parts, which

  12. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  13. Miniature pulse compressor of deep-etched gratings.

    PubMed

    Jia, Wei; Zhou, Changhe; Feng, Jijun; Dai, Enwen

    2008-11-10

    We propose a miniature pulse compressor that can be used to compensate the group velocity dispersion that is produced by a commercial femtosecond laser cavity. The compressor is composed of two identical highly efficient deep-etched transmissive gratings. Compared with prism pairs, highly efficient deep-etched transmissive grating pairs are lightweight and small. With an optimized groove depth and a duty cycle, 98% diffraction efficiency of the -1 transmissive order can be achieved at a wavelength of 800 nm under Littrow conditions. The deep-etched gratings are fabricated in fused silica by inductively coupled plasma etching. With a pair of the fabricated gratings, the input positively chirped 73.9 fs pulses are neatly compressed into the nearly Fourier transform-limited 43.2 fs pulses. The miniature deep-etched grating-based pulse compressor should be of interest for practical applications. PMID:19002230

  14. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  15. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    SciTech Connect

    Kuzmenkov, A. G. Blokhin, S. A.; Maleev, N. A.; Sakharov, A. V.; Tikhomirov, V. G.; Maksimov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.; Yang, H. P. D.; Lin, G.; Hsiao, R. S.; Chi, J. Y.

    2007-10-15

    To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 {mu}m, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

  16. Optical properties of micromachined polysilicon reflective surfaces with etching holes

    NASA Astrophysics Data System (ADS)

    Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

    1998-08-01

    MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

  17. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    DOEpatents

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  18. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    PubMed

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (p<0.05) SBS and SFL with pre-etching than it did without pre-etching. The SBS and SFL of dentin bonds decreased with phosphoric acid pre-etching. The SBS and SFL of bonds using phosphoric acid prior to application of self-etching adhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was

  19. Anti-tumor response induced by immunologically modified carbon nanotubes and laser irradiation using rat mammary tumor model

    NASA Astrophysics Data System (ADS)

    Acquaviva, Joseph T.; Hasanjee, Aamr M.; Bahavar, Cody F.; Zhou, Fefian; Liu, Hong; Howard, Eric W.; Bullen, Liz C.; Silvy, Ricardo P.; Chen, Wei R.

    2015-03-01

    Laser immunotherapy (LIT) is being developed as a treatment modality for metastatic cancer which can destroy primary tumors and induce effective systemic anti-tumor responses by using a targeted treatment approach in conjunction with the use of a novel immunoadjuvant, glycated chitosan (GC). In this study, Non-invasive Laser Immunotherapy (NLIT) was used as the primary treatment mode. We incorporated single-walled carbon nanotubes (SWNTs) into the treatment regimen to boost the tumor-killing effect of LIT. SWNTs and GC were conjugated to create a completely novel, immunologically modified carbon nanotube (SWNT-GC). To determine the efficacy of different laser irradiation durations, 5 minutes or 10 minutes, a series of experiments were performed. Rats were inoculated with DMBA-4 cancer cells, a highly aggressive metastatic cancer cell line. Half of the treatment group of rats receiving laser irradiation for 10 minutes survived without primary or metastatic tumors. The treatment group of rats receiving laser irradiation for 5 minutes had no survivors. Thus, Laser+SWNT-GC treatment with 10 minutes of laser irradiation proved to be effective at reducing tumor size and inducing long-term anti-tumor immunity.

  20. Photopolymers designed for high resolution laser ablation at a specific irradiation wavelength

    SciTech Connect

    Lippert, T.; Bennett, L.S.; Kunz, T.; Hahn, C.

    1997-04-01

    We have developed novel photopolymers based on the triazeno chromophore group. The absorption properties can be tailored for a specific irradiation wavelength (e.g. 308 nm XeCl laser). With the introduction of a photolabile group into the main chain of the polymer we expected a mechanism which is mainly photochemical. This should result in high resolution etching with no thermal damage or chemical / physical modification to the material. The gaseous products of the photochemical decomposition were thought to assist the material removal, and to prevent the re-deposition of solid products which would contaminate the surface. We confirmed (SEM/AFM) that the irradiation of the polymer at 308 mn resulted in high resolution etching. No debris has been found around the etched comers. Maximum ablation rates of about 3 {mu}m / pulse were achieved due to the dynamic absorption behavior (bleaching during the pulse). No physical or chemical modifications of the polymer surface could be detected after irradiation at the tailored absorption wavelength, whereas irradiation at different wavelengths resulted in modified (physical and chemical) surfaces. The etching mechanism can be described as a laser induced microexplosion, revealed by ns-imaging. The etching of the polymer starts and ends with the laser pulse, shown by ns-interferometry, confirming that the acting mechanism is mainly photochemical at high fluences for our polymers. Our results demonstrate that the mechanism of ablation can be controlled by designing special polymers, which can be used as high resolution laser dry etching resists.

  1. Chemical downstream etching of tungsten

    SciTech Connect

    Blain, M.G.; Jarecki, R.L.; Simonson, R.J.

    1998-07-01

    The downstream etching of tungsten and tungsten oxide has been investigated. Etching of chemical vapor deposited tungsten and e-beam deposited tungsten oxide samples was performed using atomic fluorine generated by a microwave discharge of argon and NF{sub 3}. Etching was found to be highly activated with activation energies approximated to be 6.0{plus_minus}0.5thinspkcal/mol and 5.4{plus_minus}0.4thinspkcal/mol for W and WO{sub 3}, respectively. In the case of F etching of tungsten, the addition of undischarged nitric oxide (NO) directly into the reaction chamber results in the competing effects of catalytic etch rate enhancement and the formation of a nearly stoichiometric WO{sub 3} passivating tungsten oxide film, which ultimately stops the etching process. For F etching of tungsten oxide, the introduction of downstream NO reduces the etch rate. {copyright} {ital 1998 American Vacuum Society.}

  2. Synthesis of oxidation resistant lead nanoparticle films by modified pulsed laser ablation

    SciTech Connect

    Shin, Eunsung; Murray, P. Terrence; Subramanyam, Guru; Malik, Hans K.; Schwartz, Kenneth L.

    2012-07-30

    Thin layers of lead nanoparticles have been produced by a modified pulsed laser ablation (PLA) process in which smaller nanoparticles were swept out of the ablation chamber by a stream of flowing Ar. Large ({mu}m-sized) particles, which are usually deposited during the standard PLA process, were successfully eliminated from the deposit. The nanoparticles deposited on room temperature substrates were well distributed, and the most probable particle diameter was in the order of 30 nm. Since lead is highly reactive, the nanoparticles formed in Ar were quickly oxidized upon exposure to air. A small partial pressure of H{sub 2}S gas was subsequently added to the effluent, downstream from the ablation chamber, and this resulted in the formation of nanoparticle deposits that were surprisingly oxidation resistant. The properties of the nanoparticle films (as determined by transmission electron microscopy, scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and conductivity measurements) are reported, and the mechanism of the oxidation retardation process is discussed.

  3. Synthesis of oxidation resistant lead nanoparticle films by modified pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Shin, Eunsung; Murray, P. Terrence; Subramanyam, Guru; Malik, Hans K.; Schwartz, Kenneth L.

    2012-07-01

    Thin layers of lead nanoparticles have been produced by a modified pulsed laser ablation (PLA) process in which smaller nanoparticles were swept out of the ablation chamber by a stream of flowing Ar. Large (μm-sized) particles, which are usually deposited during the standard PLA process, were successfully eliminated from the deposit. The nanoparticles deposited on room temperature substrates were well distributed, and the most probable particle diameter was in the order of 30 nm. Since lead is highly reactive, the nanoparticles formed in Ar were quickly oxidized upon exposure to air. A small partial pressure of H2S gas was subsequently added to the effluent, downstream from the ablation chamber, and this resulted in the formation of nanoparticle deposits that were surprisingly oxidation resistant. The properties of the nanoparticle films (as determined by transmission electron microscopy, scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and conductivity measurements) are reported, and the mechanism of the oxidation retardation process is discussed.

  4. Optical data recording by laser pulses in liquid-crystal cells with an azo-modified surface

    SciTech Connect

    Serak, S V; Agashkov, A V; Reshetnyak, V Yu

    2001-03-31

    The effect of trans-cis photoisomerisation of azofragments of a polymer film on the molecular reorientation of a liquid crystal is studied. It is shown that, using nanosecond laser pulses, one can perform both the reversible and static data recording in liquid-crystal cells with an azo-modified surface. The rise time of the reorientation is measured by the methods of dynamic holography to be about {approx} 30 {mu}s, and the grating efficiency achieves 15 %. (laser applications and other topics in quantum electronics)

  5. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  6. Diffused transmission of laser beam and image processing tools for alpha-particle track-etch dosimetry in PM-355 SSNTDs

    NASA Astrophysics Data System (ADS)

    Salman, Thaer M.; AL-Ahmad, Alaa Y.; Badran, Hussain A.; Emshary, Chassib A.

    2015-08-01

    The present study introduces an optical as well as image processing method that is effective in the study of PM-355 solid state nuclear track detector (SSNTDs) irradiated with α-particles at different times. Laser light with Gaussian extent and 635 nm wavelength is used to accomplish this goal. An imaging processing technique is utilized for the study of the nature and characteristics of a transmitted laser beam through PM-355 SSNTDs. Semi-empirical formulas are obtained which can be used as guide lines to calculate unknown dose. The present method is effective and simple and demands no sophisticated tool methods.

  7. Etching fission tracks in zircons

    USGS Publications Warehouse

    Naeser, C.W.

    1969-01-01

    A new technique has been developed whereby fission tracks can be etched in zircon with a solution of sodium hydroxide at 220??C. Etching time varied between 15 minutes and 5 hours. Colored zircon required less etching time than the colorless varieties.

  8. Multiple-mask chemical etching

    NASA Technical Reports Server (NTRS)

    Cannon, D. L.

    1969-01-01

    Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

  9. High-Density Plasma Etching of Group-III Nitride Films for Device Application

    SciTech Connect

    Baca, A.G.; Crawford, M.H.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-02-17

    As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.

  10. Development of chemically assisted etching method for GaAs-based optoelectronic devices

    SciTech Connect

    Gaillard, M.; Rhallabi, A.; Elmonser, L.; Talneau, A.; Pommereau, F.; Pagnod-Rossiaux, Ph.; Bouadma, N.

    2005-03-01

    Chemically assisted ion beam etching of GaAs-based materials using Cl{sub 2} reactive gas was has been experimentally and theoretically examined. The primary effort was the design of an etching system for high reproducibility and improved throughput. Characteristics of the etching process, i.e., etch rate, etch profiles, and surface morphology as a function of etching parameters, i.e., substrate temperature, Cl{sub 2} flow rate, ion current density, and energy are reported. In addition, we have analyzed the etched surfaces qualitatively by Auger electron spectroscopy, and quantitatively by atomic force microscopy. The developed process yielded stoichiometric and smooth GaAs surfaces. Moreover, in order to understand the mechanism of the Cl{sub 2} etching reaction with GaAs, a simulation of the etch profile evolution with time as function of etching parameters was carried out. Simulations were compared with experimentally derived data and were found to be in good agreement. Finally, the developed process was successfully applied to the fabrication of ridge waveguides GaAs/GaAlAs lasers with cw optical characteristics similar to wet chemical etched lasers.

  11. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  12. A Comparative Study of Microleakage on Dental Surfaces Bonded with Three Self-Etch Adhesive Systems Treated with the Er:YAG Laser and Bur

    PubMed Central

    Sanhadji El Haddar, Youssef; Cetik, Sibel; Bahrami, Babak; Atash, Ramin

    2016-01-01

    Aim. This study sought to compare the microleakage of three adhesive systems in the context of Erbium-YAG laser and diamond bur cavity procedures. Cavities were restored with composite resin. Materials and Methods. Standardized Class V cavities were performed in 72 extracted human teeth by means of diamond burs or Er-YAG laser. The samples were randomly divided into six groups of 12, testing three adhesive systems (Clearfil s3 Bond Plus, Xeno® Select, and Futurabond U) for each method used. Cavities were restored with composite resin before thermocycling (methylene blue 2%, 24 h). The slices were prepared using a microtome. Optical microscope photography was employed to measure the penetration. Results. No statistically significant differences in microleakage were found in the use of bur or laser, nor between adhesive systems. Only statistically significant values were observed comparing enamel with cervical walls (p < 0.001). Conclusion. It can be concluded that the Er:YAG laser is as efficient as diamond bur concerning microleakage values in adhesive restoration procedures, thus constituting an alternative tool for tooth preparation. PMID:27419128

  13. A Comparative Study of Microleakage on Dental Surfaces Bonded with Three Self-Etch Adhesive Systems Treated with the Er:YAG Laser and Bur.

    PubMed

    Sanhadji El Haddar, Youssef; Cetik, Sibel; Bahrami, Babak; Atash, Ramin

    2016-01-01

    Aim. This study sought to compare the microleakage of three adhesive systems in the context of Erbium-YAG laser and diamond bur cavity procedures. Cavities were restored with composite resin. Materials and Methods. Standardized Class V cavities were performed in 72 extracted human teeth by means of diamond burs or Er-YAG laser. The samples were randomly divided into six groups of 12, testing three adhesive systems (Clearfil s(3) Bond Plus, Xeno® Select, and Futurabond U) for each method used. Cavities were restored with composite resin before thermocycling (methylene blue 2%, 24 h). The slices were prepared using a microtome. Optical microscope photography was employed to measure the penetration. Results. No statistically significant differences in microleakage were found in the use of bur or laser, nor between adhesive systems. Only statistically significant values were observed comparing enamel with cervical walls (p < 0.001). Conclusion. It can be concluded that the Er:YAG laser is as efficient as diamond bur concerning microleakage values in adhesive restoration procedures, thus constituting an alternative tool for tooth preparation. PMID:27419128

  14. Analysis of micro-structural relaxation phenomena in laser-modified fused silica using confocal Raman microscopy

    SciTech Connect

    Matthews, M; Vignes, R; Cooke, J; Yang, S; Stolken, J

    2009-12-15

    Fused silica micro-structural changes associated with localized 10.6 {micro}m CO{sub 2} laser heating are reported. Spatially-resolved shifts in the high-frequency asymmetric stretch transverse-optic (TO) phonon mode of SiO{sub 2} were measured using confocal Raman microscopy, allowing construction of axial fictive temperature (T{sub f}) maps for various laser heating conditions. A Fourier conduction-based finite element model was employed to compute on-axis temperature-time histories, and, in conjunction with a Tool-Narayanaswamy form for structural relaxation, used to fit T{sub f}(z) profiles to extract relaxation parameters. Good agreement between the calculated and measured T{sub f} was found, yielding reasonable values for relaxation time and activation enthalpy in the laser-modified silica.

  15. A Spectroscopic Comparison of Femtosecond Laser Modified Fused Silica using kHz and MHz Laser Systems.

    SciTech Connect

    Reichman, W J; Krol, D M; Shah, L; Yoshino, F; Arai, A; Eaton, S M; Herman, P R

    2005-09-29

    Waveguides were written in fused silica using both a femtosecond fiber laser with a 1 MHz pulse repetition rate and a femtosecond amplified Ti:sapphire laser with a 1 kHz repetition rate. Confocal Raman and fluorescence microscopy were used to study structural changes in the waveguides written with both systems. A broad fluorescence band, centered at 650 nm, associated with non-bridging oxygen hole center (NBOHC) defects was observed after waveguide fabrication with the MHz laser. With the kHz laser system these defects were only observed for pulse energies above 1 {mu}J. Far fewer NBOHC defects were formed with the MHz laser than with kHz writing, possibly due to thermal annealing driven by heat accumulation effects at 1 MHz. When the kHz laser was used with pulse energies below 1 {mu}J, the predominant fluorescence was centered at 550 nm, a band assigned to the presence of silicon clusters (E{prime}{sub {delta}}). We also observed an increase in the intensity of the 605 cm{sup -1} Raman peak relative to the total Raman intensity, corresponding to an increase in the concentration of 3-membered rings in the lines fabricated with both laser systems.

  16. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    PubMed Central

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-01-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved. PMID:25213321

  17. Laser modified ZnO/CdSSe core-shell nanowire arrays for Micro-Steganography and improved photoconduction.

    PubMed

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-01-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved. PMID:25213321

  18. Laser micromachining of chemically altered polymers

    SciTech Connect

    Lippert, T.

    1998-08-01

    During the last decade laser processing of polymers has become an important field of applied and fundamental research. One of the most promising proposals, to use laser ablation as dry etching technique in photolithography, has not yet become an industrial application. Many disadvantages of laser ablation, compared to conventional photolithography, are the result of the use of standard polymers. These polymers are designed for totally different applications, but are compared to the highly specialized photoresist. A new approach to laser polymer ablation will be described; the development of polymers, specially designed for high resolution laser ablation. These polymers have photolabile groups in the polymer backbone, which decompose upon laser irradiation or standard polymers are modified for ablation at a specific irradiation wavelength. The absorption maximum can be tailored for specific laser emissino lines, e.g. 351, 308 and 248 nm lines of excimer lasers. The authors show that with this approach many problems associated with the application of laser ablation for photolithography can be solved. The mechanism of ablation for these photopolymers is photochemical, whereas for most of the standard polymers this mechanism is photothermal. The photochemical decomposition mechanism results in high resolution ablation with no thermal damage at the edges of the etched structures. In addition there are no redeposited ablation products or surface modifications of the polymer after ablation.

  19. Dry etching technologies for the advanced binary film

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  20. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    SciTech Connect

    Anglin, Kevin Goodhue, William D.; Swint, Reuel B.; Porter, Jeanne

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  1. Study of ICP-RIE etching on CdZnTe substrate

    NASA Astrophysics Data System (ADS)

    Xu, Pengxiao; Qiao, Hui; Wang, Ren; Lan, Tianyi; Liu, Shijia; Wang, Nili; Zhou, Qin; Xu, Bin; Liu, Xiujuan; Lu, Yidan; Wang, Li-wei; Chang, Chao; Zhang, Kefeng; Li, Xiangyang

    2014-11-01

    CdZnTe is the most suitable epitaxial substrate material of HgCdTe infrared detectors, because its lattice constant is able to achieve full match with HgCdTe's lattice constant. It is always needed to etch CdZnTe substrate during the process of device separation or when we want to fabricate micro optical device on CdZnTe substrate. This paper adopts the more advanced method, Inductive Coupled Plasma-Reactive Ion Etching(ICP-RIE). The etching conditions of ICP-RIE on CdZnTe substrate are explored and researched. First of all, a set of comparative experiments is designed. All of CdZnTe samples with the same component are polished by chemical mechanical polishing before etching. Then all samples are etched by different types of etching gases(CH4/H2/N2/Ar) and different ratios of gases as we designed. The etching time is all set to 30 minutes. After that, the surface roughness, etching rate, etching damage and the profile of etched mesas are tested and characterized by optical microscope, step profiler and confocal laser scanning microscope (CLSM), respectively. It is found that, Ar gas plays the role of physical etching, but the etching rate will decline when the concentration of Ar gas is too high. The results also show that, the introduction of N2 causes more etching damage. Finally, combination of CH4/H2/Ar is used to etch CdZnTe substrate. The ratio of these gases is 2sccm/2sccm/10sccm. The testing results of optimized etching show that, the maximum etching rate reaches up to 20μm/h and the etched CdZnTe surface is smooth with very low etching damage. At last, aimed at the shortcoming of photoresist's degeneration after long-time etching, the ICP etching process of CdZnTe deep mesa is studied. Double-layer or triple-layer photoresist are spin-coated on CdZnTe substrate during the process of lithography. Then ICP etching is carried out with the optimized condition. It is seen that there is no more phenomena of degeneration.

  2. Selective Etching of Semiconductor Glassivation

    NASA Technical Reports Server (NTRS)

    Casper, N.

    1982-01-01

    Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

  3. Modified Surface Having Low Adhesion Properties to Mitigate Insect Residue Adhesion

    NASA Technical Reports Server (NTRS)

    Wohl, Christopher J., Jr. (Inventor); Smith, Joseph G., Jr. (Inventor); Siochi, Emilie J. (Inventor); Penner, Ronald K. (Inventor)

    2016-01-01

    A process to modify a surface to provide reduced adhesion surface properties to mitigate insect residue adhesion. The surface may include the surface of an article including an aircraft, an automobile, a marine vessel, all-terrain vehicle, wind turbine, helmet, etc. The process includes topographically and chemically modifying the surface by applying a coating comprising a particulate matter, or by applying a coating and also topographically modifying the surface by various methods, including but not limited to, lithographic patterning, laser ablation and chemical etching, physical vapor phase deposition, chemical vapor phase deposition, crystal growth, electrochemical deposition, spin casting, and film casting.

  4. Investigation of impact of photonic crystal fiber structure modified by femtosecond laser micromachining on long period gratings' sensing characteristics

    NASA Astrophysics Data System (ADS)

    Liu, Shujing; Wu, Jingwei; Luo, Mingyan; Ji, Qiang

    2016-02-01

    The sensing characteristics of long period gratings (LPGs) in photonic crystal fiber (PCF) can be changed by using femtosecond laser to modify the PCF waveguide structure although dispersive characteristic plays a key role in determining the sensitivity. Based on the coupled local-mode theory, the coupling behaviors and spectral characteristics of the LPGs in PCF fabricated by a femtosecond laser and a CO2 laser are analyzed which are supported by experiment results. When the distance between the central of fiber core and the peak of the drilled hole, namely the micro-hole diameter is about 3.5 μm, the temperature and strain sensitivities are changed by 27% (from 6.20 to 7.81 pm/°C) and -21% (from -2.41 to -1.91 pm/με) in comparison with the changes of the sensitivities that is induced by CO2 laser. The investigation demonstrates that the local structural changes of PCF have an impact on the sensitivity of LPGs. The investigation demonstrates the versatility of the technique in potential applications to design the desired sensitivity of fiber grating flexibly by forming proper geometrical modulations.

  5. Laser hydrothermal reductive ablation of titanium monoxide: Hydrated TiO particles with modified Ti/O surface

    NASA Astrophysics Data System (ADS)

    Blazevska-Gilev, Jadranka; Jandová, Věra; Kupčík, Jaroslav; Bastl, Zdeněk; Šubrt, Jan; Bezdička, Petr; Pola, Josef

    2013-01-01

    IR laser- and UV laser-induced ablation of titanium monoxide (TM) in hydrogen (50 Torr) is compared to the same process induced in vacuum and shown to result in deposition of hydrated surface modified nanostructured titanium suboxide films. Complementary analyses of the films deposited in vacuum and in hydrogen by Fourier transform infrared, Raman and X-ray photoelectron spectroscopy, X-ray diffraction and electron microscopy allowed to determine different features of both films and propose a mechanism of surface modification of ejected particles, which involves hydrothermal reduction of TM and subsequent reactions of evolved water. The films exert good adhesion to metal and quartz surfaces and are hydrophobic in spite of having their surface coated with adsorbed water.

  6. Between-cycle laser system for depressurization and resealing of modified design nuclear fuel assemblies

    DOEpatents

    Bradley, John G.

    1982-01-01

    A laser beam is used to puncture fuel cladding for release of contained pressurized fission gas from plenum sections or irradiated fuel pins. Exhausted fission gases are collected and trapped for safe disposal. The laser beam, adjusted to welding mode, is subsequently used to reseal the puncture holes. The fuel assembly is returned to additional irradiation or, if at end of reactivity lifetime, is routed to reprocess. The fuel assembly design provides graded cladding lengths, by rows or arrays, such that the cladding of each component fuel element of the assembly is accessible to laser beam reception.

  7. Nanoparticle-assisted laser desorption/ionization using sinapic acid-modified iron oxide nanoparticles for mass spectrometry analysis.

    PubMed

    Komori, Hanaka; Hashizaki, Riho; Osaka, Issey; Hibi, Takao; Katano, Hajime; Taira, Shu

    2015-12-21

    Iron oxide-based nanoparticles (NP) were covalently modified with sinapic acid (SA) through a condensation reaction to assist the ionization of both large and small molecules. The morphology of SA-modified NPs (SA-NP) was characterized by transmission electron microscopy (TEM), and the modification of the NP surface with SA was confirmed using ultraviolet (UV) and infrared (IR) spectroscopy. The number of SA molecules was estimated to be 6 per NP. SA-NP-assisted laser desorption/ionization was carried out on small molecules, such as pesticides and plant hormones, and large molecules, such as peptides and proteins. A peptide fragment from degraded proteins was detected more efficiently compared with conventional methods. PMID:26535417

  8. Modified diglycol-amides for actinide separation: solvent extraction and time-resolved laser fluorescence spectroscopy complexation studies

    SciTech Connect

    Wilden, A.; Modolo, G.; Lange, S.; Sadowski, F.; Bosbach, D.; Beele, B.B.; Panak, P.J.; Skerencak-Frech, A.; Geist, A.; Iqbal, M.; Verboom, W.

    2013-07-01

    In this work, the back-bone of the diglycolamide-structure of the TODGA extractant was modified by adding one or two methyl groups to the central methylene carbon-atoms. The influence of these structural modifications on the extraction behavior of trivalent actinides and lanthanides and other fission products was studied in solvent extraction experiments. The addition of methyl groups to the central methylene carbon atoms leads to reduced distribution ratios, also for Sr(II). This reduced extraction efficiency for Sr(II) is beneficial for process applications, as the co-extraction of Sr(II) can be avoided, resulting in an easier process design. The use of these modified diglycol-amides in solvent extraction processes is discussed. Furthermore, the complexation of Cm(III) and Eu(III) to the ligands was studied using Time-Resolved-Laser-Fluorescence-Spectroscopy (TRLFS). The complexes were characterized by slope analysis and conditional stability constants were determined.

  9. Stability and etching of titanium oxynitride films in hydrogen microwave plasma

    SciTech Connect

    Do Hien; Yen, Tzu-Chun; Chang Li

    2013-07-15

    Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented.

  10. Performance properties of electro-spark deposited carbide-ceramic coatings modified by laser beam

    NASA Astrophysics Data System (ADS)

    Radek, Norbert; Bartkowiak, Konrad

    The work presented in this paper determines the influence of the laser treatment process on the properties of electrospark coatings. The properties after laser treatment were examined by microstructure analysis, microhardness, roughness and adhesion tests. The studies were conducted using WC-Co-Al2O3 electrodes produced by sintering nanostructural powders. The anti-wear coatings were first deposited by an EIL-8A apparatus on C45 carbon steel and then laser melted within various process parameters. In this case Nd:YAG laser (BLS 720 model) was applied. The electro-spark deposited coatings are very promising to improve abrasive wear resistance of tools and machine parts, which was indicated by tribological tests.

  11. Lasers.

    ERIC Educational Resources Information Center

    Schewe, Phillip F.

    1981-01-01

    Examines the nature of laser light. Topics include: (1) production and characteristics of laser light; (2) nine types of lasers; (3) five laser techniques including holography; (4) laser spectroscopy; and (5) laser fusion and other applications. (SK)

  12. INL Internship:Modification of Metal Contaminants on Oxide Surfaces Modified by Laser Irradiation

    SciTech Connect

    Michael J. Hansen; Robert Fox; Les Manner

    2006-08-01

    This project focuses on obtaining the optimal laser parameters needed for enhancing metal contaminants on cement, granite, and marble. The various parameters of the laser tested include the fluence, wavelength, and frequency. A chelating study was also performed in order to increase the volatility of cobalt. In the following paper each experiment is described in detail. No results are included in this report because their release is not approved and they could eventually become classified.

  13. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    NASA Astrophysics Data System (ADS)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  14. Individualized Learning Package about Etching.

    ERIC Educational Resources Information Center

    Sauer, Michael J.

    An individualized learning package provides step-by-step instruction in the fundamentals of the etching process. Thirteen specific behavioral objectives are listed. A pretest, consisting of matching 15 etching terms with their definitions, is provided along with an answer key. The remainder of the learning package teaches the 13 steps of the…

  15. Low damage dry etch for III-nitride light emitters

    NASA Astrophysics Data System (ADS)

    Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

    2015-08-01

    We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

  16. Sb (111) Abnormal Behavior under Ion Etching

    NASA Astrophysics Data System (ADS)

    Smirnov, A. A.; Bozhko, S. I.; Ionov, A. M.; Protasova, S. G.; Chekmazov, S. V.; Kapustin, A. A.

    Due to a strong spin-orbit interaction (SOI), the surface states of Sb (111) are similar to those for topological insulators (TI) Sugawara et al. (2006). The surface states are protected by time-reversal symmetry and energy dispersion is a linear function of momentum. Defects in crystal structure lead to a local break of the surface translational symmetry and can modify surface states. It is the primary reason to study defects of Sb crystal structure and their effect on the surface states dispersion. Etching of the Sb (111) surface using Ar+ ions is a common way to create defects both in a bulk and on the surface of the crystal. Sb (111) ion etching at room temperature reveals anomalous behavior of surface crystal structure. It results in formation of flat terraces of 2 nm in size. Investigation of electronic structure of the etched Sb (111) surface has demonstrated increase of density of states (DOS) at the Fermi level. The results are discussed in terms of local break of conditions of Peierls transition.

  17. Treatment of lumbar disc herniation by percutaneous laser disc decompression (PLDD) and modified PLDD

    NASA Astrophysics Data System (ADS)

    Chi, Xiao fei; Li, Hong zhi; Wu, Ru zhou; Sui, Yun xian

    2005-07-01

    Objective: To study the micro-invasive operative method and to compare the effect of treatment of PLDD and modified PLDD for Lumbar Disc Herniation. Method: Vaporized part of the nucleus pulposus in single or multiple point after acupuncture into lumbar disc, to reach the purpose of the decompression of the lumbar disc. Result: Among the 19 cases of the regular PLDD group, the excellent and good rate was 63.2%, and among the 40 cases of the modified PLDD group, the excellent and good rate was 82.5%. Conclusion: The modified PLDD has good effect on the treatment for lumbar disc herniation.

  18. CDU improvement technology of etching pattern using photo lithography

    NASA Astrophysics Data System (ADS)

    Tadokoro, Masahide; Shinozuka, Shinichi; Jyousaka, Megumi; Ogata, Kunie; Morimoto, Tamotsu; Konishi, Yoshitaka

    2008-03-01

    Semiconductor manufacturing technology has shifted towards finer design rules, and demands for critical dimension uniformity (CDU) of resist patterns have become greater than ever. One of the methods for improving Resist Pattern CDU is to control post-exposure bake (PEB) temperature. When ArF resist is used, there is a certain relationship between critical dimension (CD) and PEB temperature. By utilizing this relationship, Resist Pattern CDU can be improved through control of within-wafer temperature distribution in the PEB process. Resist Pattern CDU improvement contributes to Etching Pattern CDU improvement to a certain degree. To further improve Etching Pattern CDU, etcher-specific CD variation needs to be controlled. In this evaluation, 1. We verified whether etcher-specific CD variation can be controlled and consequently Etching Pattern CDU can be further improved by controlling resist patterns through PEB control. 2. Verifying whether Etching Pattern CDU improvement through has any effect on the reduction in wiring resistance variation. The evaluation procedure is as follows.1. Wafers with base film of Doped Poly-Si (D-Poly) were prepared. 2. Resist patterns were created on them. 3. To determine etcher-specific characteristics, the first etching was performed, and after cleaning off the resist and BARC, CD of etched D-Poly was measured. 4. Using the obtained within-wafer CD distribution of the etching patterns, within-wafer temperature distribution in the PEB process was modified. 5. Resist patterns were created again, followed by the second etching and cleaning, which was followed by CD measurement. We used Optical CD Measurement (OCD) for measurement of resist patterns and etching patterns as OCD is minimally affected by Line Edge Roughness (LER). As a result, 1. We confirmed the effect of Resist Pattern CD control through PEB control on the reduction in etcher-specific CD variation and the improvement in Etching Pattern CDU. 2. The improvement in Etching

  19. Ultrasonic metal etching for metallographic analysis

    NASA Technical Reports Server (NTRS)

    Young, S. G.

    1971-01-01

    Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.

  20. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique

    NASA Astrophysics Data System (ADS)

    Choi, H. W.; Jeon, C. W.; Dawson, M. D.

    2004-08-01

    A novel method of etching which allows the direct interconnection of multiple GaN-based devices is introduced. The mesa structures of devices are etched using an isotropic recipe which produces tapered sidewalls. The extent of inclination can be readily controlled through various etching parameters, which include the ICP power, plate power and pressure, thus modifying the vertical and lateral etch components. This approach has been successfully adopted in the fabrication of interconnect and matrix-addressable micro-LEDs, which offer superior optical and electrical performance and a high degree of uniformity compared to similar devices fabricated using conventional processes.

  1. Parameter dependence of marginal microleakage in Er:YAG-laser-ablated and -modified dental preparations

    NASA Astrophysics Data System (ADS)

    Wilder-Smith, Petra B. B.; Choi, Sam; Kurosaki, Tom

    1998-04-01

    Previous studies have shown that the status of the residual tooth surface after hard dental tissue ablation using laser irradiation may vary depending on the parameter combinations and cooling mechanisms used. The purpose of this investigation was to assess the effects of Er:YAG laser cavity preparation at different fluences on microleakage of glass ionomer and composite resin restorations. In freshly extracted clinically and radiographically healthy human anterior teeth, standardized Class V cavities were prepared using the dental drill or the Er:YAG laser (Quantronix 294). Fluences of 10 - 40J/cm2 were used at a p.r.r. of 1 Hz and pulse durations of 250 microseconds under an air/water coolant spray. Thirty three teeth were included in each subgroup; 3 teeth were used for light microscopy and SEM; 15 underwent conventional restoration with glass ionomer and 15 with composite resin. After immersion in 5% methylene blue, dye penetration was measured linearly in 5 standardized locations on each of the bisected samples. Using the Pearson correlation coefficients, microleakage correlated strongly with laser fluence for glass ionomer (p equals 0.0238) and for composite resin (p equals 0.0099) restorations. Results differed significantly between the 2 restoration types (p less than 0.05). In conclusion, the parameters used during laser ablation of dental tissues must be carefully controlled to optimize clinical outcome.

  2. Compact two-photon laser-scanning microscope made from minimally modified commercial components

    NASA Astrophysics Data System (ADS)

    Iyer, Vijay; Hoogland, Tycho; Losavio, Bradley E.; McQuiston, A. R.; Saggau, Peter

    2002-06-01

    A compact two-photon laser-scanning microscope (TPLSM) was constructed using a diode-pumped, mode-locked Nd:YLF laser (Biolight 1000, Coherent Laser Group) and a small confocal laser scan-head (PCM2000, Nikon Bioscience). The laser emits at 1047nm and is fiber-coupled to a compact compressor unit producing a pulse-width of ~175fsec. Both the pulse compressor and confocal scan head were interfaced on a small optical breadboard that was directly attached to an upright research microscope (Eclipse E600FN, Nikon Bioscience). Two-photon fluorescence emitted from the specimen was collected into a multimode fiber and transmitted directly to an external PMT supplied with the Nikon confocal system. The modifications to the scanhead were minimal (a single mirror replacement) and did not interfere with its confocal function. The resulting system offers several advantages: compact size, turnkey operation, and the ability to translate the microscope rather than an often delicate specimen. In addition, it is possible to switch between confocal and two-photon operation, allowing for straightforward comparison. Using this compact TPLSM, we obtained structural and functional images from hippocampal neurons in living brain slices using commonly available fluorophores.

  3. Steroid hormones analysis with surface-assisted laser desorption/ionization mass spectrometry using catechin-modified titanium dioxide nanoparticles.

    PubMed

    Chiu, Tai-Chia

    2011-10-30

    This paper describes the application of catechin-modified titanium dioxide nanoparticles (TiO(2) NPs) as matrices to analyze four steroid hormones by surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS). The catechin-modified TiO(2) NPs have high absorbance at 337 nm and are effective SALDI matrices when using a nitrogen laser. Four test steroid hormones-cortisone, hydrocortisone, progesterone, and testosterone-were directly analyzed by SALDI-MS. The limits of detection at a signal-to-noise ratio of 3 for cortisone, hydrocortisone, progesterone, and testosterone were 1.62, 0.70, 0.66, and 0.23 μM, respectively. This approach provides good quantitative linearity for the four analytes (R(2)>0.986) with good reproducibility (the shot-to-shot and batch-to-batch variations for the four analytes were less than 10% and 15%, respectively). We validated the practicality of this approach-considering its advantages in sensitivity, repeatability, rapidity, and simplicity-through the analysis of testosterone in a urine sample. PMID:22063559

  4. Highly efficient and photostable solid-state dye lasers based on modified copolymers doped with PM567

    NASA Astrophysics Data System (ADS)

    Jiang, Yugang; Fan, Rongwei; Xia, Yuanqin; Chen, Deying

    2011-04-01

    Solid-state dye samples based on modified copolymers of methyl methacrylate (MMA) and 2-hydroxyethyl methacrylate (HEMA) with methanol doped with PM567 were first prepared. The volume proportions of methanol have great effects on the laser's characteristics including spectra, lasing output and thermal properties. The highest slope efficiency of 64.25% was achieved in the sample MP (MMA:HEMA = 85:15 + 10% methanol). Pumping the samples at a repetition rate of 5 Hz with a pulse energy as high as 100 mJ (the fluence was 0.26 J/cm2), the maximum lifetime of 278,000 shots was obtained in the sample MP (MMA:HEMA = 85:15 + 15% methanol), and the corresponding normalized photostability reached 180.7 GJ/mol. The obtained ten-shots damage thresholds were as high as 6.7 J/cm2. The results indicate that the laser properties of solid-state dyes can be greatly enhanced by using modified copolymers of MMA and HEMA with methanol as solid hosts.

  5. Physical properties and microstructural performance of Sn modified laser amorphous-nanocrystals reinforced coating

    NASA Astrophysics Data System (ADS)

    Li, Jia-Ning; Gong, Shui-Li

    2013-01-01

    An amorphous-nanocrystals reinforced composite coating was fabricated on TA15 titanium alloy substrate by laser alloying of Al-Sn-B4C-SiC-TiN-Y2O3 mixed powders, which greatly improved the wear resistance of substrate. Experimental results indicated that Al-Sn nanocrystalline phases were produced through in situ metallurgical reactions, which blocked the motion of dislocation. The productions of the eutectics, such as Ti-Si greatly promoted the formation of amorphous phases in such coating. Compared with the substrate, higher wear resistance of laser alloying coating was mainly ascribed to the hard phase, amorphous-nanocrystalline phases and fine grain strengthening. This research provided essential theoretical and experimental basis to promote the application of laser alloying technique in modern aviation industry.

  6. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    PubMed

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect. PMID:22298375

  7. Modified femtosecond laser inscription method for tailored grating sensors in encapsulated silica and low-loss polymer optical fibres

    NASA Astrophysics Data System (ADS)

    Kalli, Kyriacos; Lacraz, Amedee; Theodosiou, Andreas; Kofinas, Marios

    2016-05-01

    There is great interest in the development of flexible wavelength filters and optical fibre sensors, such as Bragg and superstructure gratings, grating arrays and chirped gratings in glass and polymer optical fibres. A major hurdle is the development of an inscription method that should offer flexibility and reliability and be generally applicable to all optical fibre types. With this in mind we have developed a novel femtosecond laser inscription method; plane-by-plane inscription, whereby a 3D-index change of controlled length across the fibre core, width along the fibre axis and depth is written into the optical fibre. We apply this method for the inscription of various grating types in coated silica and low- loss CYTOP polymer optical fibres. The plane-by-plane method allows for multiple and overlapping gratings in the fibre core. Moreover, we demonstrate that this novel fibre Bragg grating inscription technique can be used to modify and add versatility to an existing, encapsulated optical fibre pressure sensor. The femtosecond laser is operated in the green or the near infra-red, based on the material properties under laser modification.

  8. 193-nm excimer laser sclerostomy using a modified open mask delivery system in rhesus monkeys with experimental glaucoma.

    PubMed

    Allan, B D; van Saarloos, P P; Cooper, R L; Keogh, E J; Constable, I J

    1993-11-01

    Excimer laser sclerostomy is a new glaucoma filtration procedure in which the argon fluoride excimer laser at 193 nm is delivered ab externo through a modified open mask system incorporating an en-face air jet to dry the target area and preserve hemostasis during ablation and a conjunctival plication mechanism, which allows the conjunctival and scleral wounds created by through-and-through ablation to separate once the mask is removed. No preparatory dissection of the conjunctiva is required. Five 200-microns and five 500-microns sclerostomies were formed by ablation at a pulse repetition rate of 20 Hz and a fluence per pulse of 400 mJ/cm2 in fellow eyes of five rhesus monkeys with experimental glaucoma. Overall, seven of the ten eyes attained a functional result, with intraocular pressures remaining below 21 mmHg for 6 +/- 1 days and rising to the pre-operative level after 10 +/- 3 days without adjunctive antifibroblast medication. The duration of filtration for 200-microns and 500-microns sclerostomies was similar, and parallels that previously observed for posterior lip sclerectomy in the same animal model. The three eyes with no functional result all had incorrectly positioned sclerostomies. Choroidal detachment and significant shallowing of the anterior chamber did not occur. Excimer laser sclerostomy appears to be a viable technique for filtration, provided that mask placement is accurate. PMID:8258402

  9. Catalytic activity of noble metals for metal-assisted chemical etching of silicon

    NASA Astrophysics Data System (ADS)

    Yae, Shinji; Morii, Yuma; Fukumuro, Naoki; Matsuda, Hitoshi

    2012-06-01

    Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium.

  10. Catalytic activity of noble metals for metal-assisted chemical etching of silicon

    PubMed Central

    2012-01-01

    Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent. Three major factors control the etching reaction and the porous silicon structure: photoillumination during etching, oxidizing agents, and metal particles. In this study, the influence of noble metal particles, silver, gold, platinum, and rhodium, on this etching is investigated under dark conditions: the absence of photogenerated charges in the silicon. The silicon dissolution is localized under the particles, and nanopores are formed whose diameters resemble the size of the metal nanoparticles. The etching rate of the silicon and the catalytic activity of the metals for the cathodic reduction of oxygen in the hydrofluoric acid solution increase in the order of silver, gold, platinum, and rhodium. PMID:22738277

  11. Submicron patterned metal hole etching

    DOEpatents

    McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

    2000-01-01

    A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

  12. Corrosion and wear properties of laser surface modified NiTi with Mo and ZrO 2

    NASA Astrophysics Data System (ADS)

    Ng, K. W.; Man, H. C.; Yue, T. M.

    2008-08-01

    Because of its biocompatibility, superelasticity and shape memory characteristics, NiTi alloys have been gaining immense interest in the medical field. However, there is still concern on the corrosion resistance of this alloy if it is going to be implanted in the human body for a long time. Titanium is not toxic but nickel is carcinogenic and is implicated in various reactions including allergic response and degeneration of muscle tissue. Debris from wear and the subsequent release of Ni + ions due to corrosion in the body system are fatal issues for long-term application of this alloy in the human body. This paper reports the corrosion and wear properties of laser surface modified NiTi using Mo and ZrO 2 as surface alloying elements, respectively. The modified layers which are free from microcracks and porosity, act as both physical barrier to nickel release and enhance the bulk properties, such as hardness, wear resistance, and corrosion resistance. The electrochemical performance of the surface modified alloy was studied in Hanks' solution. Electrochemical impedance spectroscopy was measured.

  13. Photosensitive etch protection coating for silicon wet-etch applications

    NASA Astrophysics Data System (ADS)

    Dalvi-Malhotra, J.; Zhong, X. F.; Planje, C.

    2008-02-01

    A spin-on polymeric material has been developed to replace the silicon nitride mask used in the MEMS industry for silicon wet-etch processing. Built-in photosensitivity eliminates the need for additional photoresists in the system. The process consists of applying an organosilane-based primer layer onto a silicon wafer, followed by spin coating the photosensitive layer. After a soft bake, the coating is imaged by exposing it to ultraviolet light. After a post-exposure bake, the coating is developed by a solvent. After a final bake, the prepared wafer is then etched in a hot concentrated alkaline solution to complete the pattern transfer. The polymer-coated area remains protected with insignificant and controllable undercut after extended hours of wet etching. Etch protection performance was characterized as a ratio of undercut (u) to etch depth (h). The polymeric mask allows silicon substrates to be etched anisotropically in the same way as silicon nitride masks although more undercut occurs when KOH or NaOH are used as etchants. With use of tetramethylammonium hydroxide (TMAH) as an etchant, a consistent 1-2% undercut ratio (u/h×100%) was obtained. The effects of various parameters such as use of different etchants and the effects of etchant concentration and delayed processing on undercut ratio are investigated.

  14. Excimer laser sclerostomy: the in vitro development of a modified open mask delivery system.

    PubMed

    Allan, B D; van Saarloos, P P; Russo, A V; Cooper, R L; Constable, I J

    1993-01-01

    The argon fluoride (ArF) excimer laser at 193 nm ablates the ocular tissues with a new order of precision and virtually no adjacent damage. A glaucoma filtration operation has been designed in which small-bore sclerostomies are created using the ArF excimer laser delivered through an open mask. The mask plicates the conjunctiva at the limbus prior to ablation. Removing the mask at the end of the procedure allows the conjunctiva to relax back to its original position, separating the conjunctival and scleral wounds. Formal conjunctival dissection is thus avoided. Feasibility studies in cadaver pig eyes, using a fluence per pulse of 400 mJ/cm2 and a pulse repetition rate of 20 Hz, indicate that sclerostomies of 300 microns diameter can be reliably formed if an en-face air jet is built into the mask to raise the pressure in the target area, preventing aqueous flooding. PMID:8325423

  15. Refractive index-modified structures in glass written by 266nm fs laser pulses.

    PubMed

    Saliminia, Ali; Bérubé, Jean-Philippe; Vallée, Réal

    2012-12-01

    We demonstrate the inscription of embedded waveguides, anti-waveguides and Bragg gratings by use of intense femtosecond (fs) UV laser pulses at 266nm in pure fused silica, and for the first time, in bulk fused quartz and ZBLAN glasses. The magnitude of induced index changes, depends, besides pulse energy and translation speed, largely on writing depth and varies from ~10(-4) for smooth modifications to ~10(-3) for damaged structures. The obtained results are promising as they present the feasibility of fabrication of short (< 0.2μm) period first-order fiber Bragg gratings (FBGs) for applications such as in realization of all-fiber lasers operating at short wavelengths. PMID:23262691

  16. Laser-induced fast fusion of gold nanoparticle-modified polyelectrolyte microcapsules.

    PubMed

    Wu, Yingjie; Frueh, Johannes; Si, Tieyan; Möhwald, Helmuth; He, Qiang

    2015-02-01

    In this study we investigated the effect of laser-induced membrane fusion of polyelectrolyte multilayer (PEM) based microcapsules bearing surface-attached gold nanoparticles (AuNPs) in aqueous media. We demonstrate that a dense coating of the capsules with AuNPs leads to enhanced light absorption, causing an increase of local temperature. This enhances the migration of polyelectrolytes within the PEMs and thus enables a complete fusion of two or more capsules. The encapsulated substances can achieve complete merging upon short-term laser irradiation (30 s, 30 mW @ 650 nm). The whole fusion process is followed by optical microscopy and scanning electron microscopy. In control experiments, microcapsules without AuNPs do not show a significant capsule fusion upon irradiation. It was also found that the duration of capsule fusion is affected by the density of AuNPs on the shell - the higher the density of AuNPs the shorter the fusion time. All these findings confirm that laser-induced microcapsule fusion is a new type of membrane fusion. This effect helps to study the interior exchange reactions of functional microcapsules, micro-reactors and drug transport across multilayers. PMID:25521939

  17. Sputter etching of hemispherical bearings

    NASA Technical Reports Server (NTRS)

    Schiesser, R. J.

    1972-01-01

    Technique was developed for fabricating three dimensional pumping grooves on gas bearings by sputter etching. Method eliminates problems such as groove nonuniformity, profile, and finish, which are associated with normal grooving methods.

  18. High aspect ratio silicon etch: A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma

    2010-09-01

    High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

  19. Controlled in situ etch-back

    NASA Technical Reports Server (NTRS)

    Mattauch, R. J.; Seabaugh, A. C. (Inventor)

    1981-01-01

    A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

  20. Distributed etched diffraction grating demultiplexer

    NASA Astrophysics Data System (ADS)

    Jafari, Amir

    This doctoral thesis studies the concept of a distributed etched diffraction grating (DEDG) and presents a methodology to engineer the spectral response of the device. The design which incorporates a distributed Bragg reflector (DBR) at the facets of a conventional etched diffraction grating demultiplexer promises for a superior performance in multiple aspects. Where in a conventional etched diffraction grating, smooth vertical deep etched walls are required in order to realize a low insertion loss device; in the DEDG such requirement is significantly mitigated. Deep etched walls are replaced with shallowly etched diffraction grating facets followed by a DBR structure and as a result devices with significantly lower insertion loss are achievable. The feasibility of the application of DEDG as a wavelength demultiplexer was demonstrated through fabrication and characterization of a prototype device. The proof of concept device was fabricated using the state of the art deep UV optical lithography and reactive ion etching in a nano-photonic silicon-on-insulator (SOI) material platform. The fabricated device was then characterized in the lab. Furthermore, incorporation of the DBR structure at the facets of the conventional etched diffraction grating decouples the reflection and diffraction functionalities, rendering the DEDG suitable for spectral response engineering. According to the application, the output spectral response of the device can be tailored through careful design and optimization of the incorporated DBR. In this thesis, through numerical simulations we have shown that functionalities such as polarization independent performance and at top insertion loss envelop are viable. A methodology to engineer the spectral response of the DEDG is discussed in details.

  1. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  2. Method of etching zirconium diboride

    SciTech Connect

    Heath, L.S.; Kwiatkowski, B.

    1988-03-31

    The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

  3. Modified long-range surface plasmon polariton modes for laser nanoresonators

    NASA Astrophysics Data System (ADS)

    Ikeda, Kazuhiro; Fainman, Yeshaiahu; Alan Shore, K.; Kawaguchi, Hitoshi

    2011-09-01

    We investigate a modification of long-range surface plasmon polariton modes supported by thin metal-coated dielectric cylinders for laser nanoresonators. A drawback of the low loss surface modes is the small mode overlap with the core dielectric cylinder that will be intended for the gain region in typical nanolasers. We show that increasing the refractive index of the outermost dielectric cladding improves the poor mode overlap, but still keeps the mode low loss and well confined in a small radius of the cylinder. The high refractive index of the dielectric cladding offers another possibility of a nanolaser structure whose gain region resides in the cladding.

  4. Dry Ice Etches Terrain

    NASA Technical Reports Server (NTRS)

    2007-01-01

    [figure removed for brevity, see original site] Figure 1

    Every year seasonal carbon dioxide ice, known to us as 'dry ice,' covers the poles of Mars. In the south polar region this ice is translucent, allowing sunlight to pass through and warm the surface below. The ice then sublimes (evaporates) from the bottom of the ice layer, and carves channels in the surface.

    The channels take on many forms. In the subimage shown here (figure 1) the gas from the dry ice has etched wide shallow channels. This region is relatively flat, which may be the reason these channels have a different morphology than the 'spiders' seen in more hummocky terrain.

    Observation Geometry Image PSP_003364_0945 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on 15-Apr-2007. The complete image is centered at -85.4 degrees latitude, 104.0 degrees East longitude. The range to the target site was 251.5 km (157.2 miles). At this distance the image scale is 25.2 cm/pixel (with 1 x 1 binning) so objects 75 cm across are resolved. The image shown here has been map-projected to 25 cm/pixel . The image was taken at a local Mars time of 06:57 PM and the scene is illuminated from the west with a solar incidence angle of 75 degrees, thus the sun was about 15 degrees above the horizon. At a solar longitude of 219.6 degrees, the season on Mars is Northern Autumn.

  5. Photonic jet subwavelength etching using a shaped optical fiber tip.

    PubMed

    Zelgowski, Julien; Abdurrochman, Andri; Mermet, Frederic; Pfeiffer, Pierre; Fontaine, Joël; Lecler, Sylvain

    2016-05-01

    We demonstrate that photonic jets (PJs) can be obtained in the vicinity of a shaped optical fiber and that they can be used to achieve subwavelength etchings. Only 10% of the power of a 30 W, 100 ns, near-infrared (1064 nm) Nd:YAG laser, commonly used for industrial laser processing, has been required. Etchings on a silicon wafer with a lateral feature size close to half-laser wavelength have been achieved using a shaped-tip optical fiber. This breakthrough has been carried out in ambient air by using a multimode 100/140 μm silica fiber with a shaped tip that generates a concentrated beam at their vicinity, a phenomenon referred to as a PJ, obtained for the first time without using microspheres. PJ achieved with a fiber tip, easier to manipulate, opens far-reaching benefits for all PJ applications. The roles of parameters such as laser fluence, tip shape, and mode excitation are discussed. A good correlation has been observed between the computed PJ intensity distribution and the etched marks' sizes. PMID:27128077

  6. Effect of argon ion etching on the magnetic properties of FeCoB films

    NASA Astrophysics Data System (ADS)

    Zhu, Junwei; Zhou, Kan; Yang, Yi; Tang, Dongming; Zhang, Baoshan; Lu, Mu; Lu, Huaixian

    2015-01-01

    In this paper, a new method to modify Ta underlayers by an argon ion etching technology is introduced. Surface roughness of Ta underlayers, as well as soft magnetic properties of post-deposited FeCoB films can be improved by applying a proper ion etching process. The reduction of magnetic coercivity of FeCoB films deposited on the modified Ta underlayers is attributed to the improvement of interfacial roughness, which can reduce magnetic ripples in magnetic films. The microwave damping linewidth of magnetic films is also found to be related to the interfacial roughness. Ta underlayers modified by the ion etching can reduce the influence of two-magnon scattering effect, and thus tune microwave properties of magnetic films. All the results prove that argon ion etching is an effective way to tailor magnetic properties of magnetic films.

  7. Etch rate Modeling and Real-time Control

    NASA Astrophysics Data System (ADS)

    Hershkowitz, N.; Sarfaty, M.; Baum, C.; Harper, M.; Shohet, J. L.

    1997-11-01

    The relatively high process rates in high density plasma tools as well as the shrinking thickness of the films, require fast estimate of the process state in order to implement real-time advanced process control. The fast etch rate estimate, within one second, in a spot size of 1-2 mm and the time averaged rates across the wafer are obtained by a combined use of an in-situ two-color laser interferometer and a full wafer image interferometer, respectively. The gas phase state is monitored by optical emission spectroscopy and a residual gas analyzer. The magnetically confined ICP tool state, including gas flow, pressure, and RF power to the antenna and the electrostatic chuck, is computer controlled and monitored. The absolute thickness of the film is determined during the process, thus providing an end-point prediction. Splitting the two-color laser beam to two spots on the wafer that are coated with different films provides real-time etch selectivity. The advantages of two-color laser interferometry for real-time process monitoring, development and control will be described. Langmuir kinetics modeling of the measured etch rates of polysilicon and SiO2 films in Cl2 and CF4 discharges using tool state parameters will be described. The etch rate model enabled us to develop a model-based real-time control algorithm. The achieved real-time control of plasma etch rates of un-patterned SiO2 and polysilicon films will be described. This work is funded by NSF grant No. EEC-8721545.

  8. Real-time Control and Modeling of Plasma Etching

    NASA Astrophysics Data System (ADS)

    Sarfaty, M.; Baum, C.; Harper, M.; Hershkowitz, N.; Shohet, J. L.

    1997-10-01

    The relatively high process rates in high density plasma tools as well as the shrinking thickness of the films, require fast estimate of the process state in order to implement real-time advanced process control. The fast etch rate estimate, within one second, in a single spot size of 1-2 mm and the time averaged rates across the wafer are obtained by a combined use of an in-situ two-color laser interferometer and a full wafer image interferometer, respectively. The gas phase state is monitored by optical emission spectroscopy and a residual gas analyzer. The magnetically confined ICP tool state, including gas flow, pressure, and RF power to the antenna and the electrostatic chuck, is computer controlled and monitored. The absolute thickness of the film is determined during the process, thus providing an end-point prediction. The advantages of two-color laser interferometry for real-time process monitoring, development and control will be described. Langmuir kinetics modeling of the measured etch rates of polysilicon and SiO2 films in Cl2 and CF4 discharges using tool state parameters will be described. The etch rate model enabled us to develop a model-based real-time control algorithm. The achieved real-time control of plasma etch rates of un-patterned SiO2 and polysilicon films will be described. This work is funded by NSF grant No. EEC-8721545.

  9. Influence of the use of Er:YAG laser for cavity preparation and surface treatment in microleakage of resin-modified glass ionomer restorations.

    PubMed

    Chinelatti, Michelle A; Ramos, Renata P; Chimello, Daniela T; Borsatto, Maria C; Pécora, Jesus D; Palma-Dibb, Regina G

    2004-01-01

    This study quantitatively assessed the amount of microleakage on Class V cavities prepared by Er:YAG laser and high-speed handpiece, varying the surface treatment and restoring with a resin-modified glass ionomer cement. Fifty cavities were prepared using either an Er:YAG laser device or a carbide bur at high speed. The surface treatment was performed as follows: Er:YAG laser irradiation (G1); 40% polyacrylic acid (G2); laser + acid (G3); finishing with low speed + laser + acid (G4); conventional bur preparation + acid (G5-control). The samples were restored with Fuji II LC, thermocycled, isolated and immersed in a 50% AgNO3 solution. The restorations were serially sectioned and the extent of dye penetration was measured in milimeters using specific computer software. Data were analyzed by two-way ANOVA and Tukey test. The lowest degree of microleakage was observed for G5, which was statistically similar (p>0.05) to G4 but different (p<0.05) from all the other experiental groups. Lesser microleakage was observed at the occlusal margins than at the cervical margins (p<0.05). It may be concluded that the use of Er:YAG laser for cavity preparation and surface treatment negatively affected the marginal sealing of resin-modified glass ionomer restorations. PMID:15279483

  10. Photoluminescence characterization of the surface layer of chemically etched CdTe

    NASA Astrophysics Data System (ADS)

    García-García, J.; González-Hernández, J.; Mendoza-Alvarez, J. G.; Cruz, Elías López; Contreras-Puente, Gerardo

    1990-04-01

    The effects of several reducing and oxidizing etches on CdTe surfaces have been characterized by photoluminescence. For excitation, several lines from three different types of gas lasers, emitting at 325 nm (He-Cd laser), 488 nm (argon-ion laser), and 632.8 nm (He-Ne laser) were used. The corresponding light penetration depth varied from approximately 25 to 200 nm. The analysis of the photoluminescence as a function of the depth not only allows the characterization of the type of defects created by the etching but also their location from the treated surfaces. Proper etching solutions produce surfaces with a crystalline quality comparable to that of a cleaved surface and the photoluminescence spectra do not depend on the energy of the excitation.

  11. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    PubMed Central

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.05

    0.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  12. An adaptive optics approach for laser beam correction in turbulence utilizing a modified plenoptic camera

    NASA Astrophysics Data System (ADS)

    Ko, Jonathan; Wu, Chensheng; Davis, Christopher C.

    2015-09-01

    Adaptive optics has been widely used in the field of astronomy to correct for atmospheric turbulence while viewing images of celestial bodies. The slightly distorted incoming wavefronts are typically sensed with a Shack-Hartmann sensor and then corrected with a deformable mirror. Although this approach has proven to be effective for astronomical purposes, a new approach must be developed when correcting for the deep turbulence experienced in ground to ground based optical systems. We propose the use of a modified plenoptic camera as a wavefront sensor capable of accurately representing an incoming wavefront that has been significantly distorted by strong turbulence conditions (C2n <10-13 m- 2/3). An intelligent correction algorithm can then be developed to reconstruct the perturbed wavefront and use this information to drive a deformable mirror capable of correcting the major distortions. After the large distortions have been corrected, a secondary mode utilizing more traditional adaptive optics algorithms can take over to fine tune the wavefront correction. This two-stage algorithm can find use in free space optical communication systems, in directed energy applications, as well as for image correction purposes.

  13. ION BEAM ETCHING EFFECTS IN BIOLOGICAL MICROANALYSIS

    EPA Science Inventory

    Oxygen ion beam sputter etching used in SIMS has been shown to produce morphologic effects which have similarities and differences in comparison to rf plasma etching of biological specimens. Sputter yield variations resulting from structural microheterogeneity are illustrated (e....

  14. Optimal conditions for the preparation of superhydrophobic surfaces on al substrates using a simple etching approach

    NASA Astrophysics Data System (ADS)

    Ruan, Min; Li, Wen; Wang, Baoshan; Luo, Qiang; Ma, Fumin; Yu, Zhanlong

    2012-07-01

    Many methods have been proposed to develop the fabrication techniques for superhydrophobic surfaces. However, such techniques are still at their infant stage and suffer many shortcomings. In this paper, the superhydrophobic surfaces on an Al substrate were prepared by a simple etching method. Effects of etching time, modifiers, and modification concentration and time were investigated, and optimal conditions for the best superhydrophobicity were studied. It was demonstrated that for etching the aluminum plate in Beck's dislocation, if the etching time was 15 s, modifier was Lauric acid-ethanol solution, and modification concentration and time was 5% and 1.5 h, respectively, the surface exhibited a water contact angle as high as 167.5° and a contact angle hysteresis as low as 2.3°.

  15. Precision Laser Annealing of Focal Plane Arrays

    SciTech Connect

    Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea; Verley, Jason C.; Jenkins, Mark W.

    2015-09-01

    We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.

  16. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  17. Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

    SciTech Connect

    Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-11-04

    Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering resorption of the etch products plays a dominant role in BC13/Ar ICP etching, while in Clz/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 ~rnhnin are achieved in Clz/Ar plasmas with smooth surfaces and anisotropic profiles. In BC13/Ar plasmas, etch rates of 5100 Mmin and 4200 Mmin are obtained for GaSb and AIGaAsSb, respectively. The surfaces of both GaSb and AIGaAsSb etched in BC13/Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AIGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-IR laser diodes.

  18. Semiconductor etching by hyperthermal neutral beams

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K. (Inventor); Giapis, Konstantinos P. (Inventor)

    1999-01-01

    An at-least dual chamber apparatus and method in which high flux beams of fast moving neutral reactive species are created, collimated and used to etch semiconductor or metal materials from the surface of a workpiece. Beams including halogen atoms are preferably used to achieve anisotropic etching with good selectivity at satisfactory etch rates. Surface damage and undercutting are minimized.

  19. Nanoscrews: Asymmetrical Etching of Silver Nanowires.

    PubMed

    Tan, Rachel Lee Siew; Chong, Wen Han; Feng, Yuhua; Song, Xiaohui; Tham, Chu Long; Wei, Jun; Lin, Ming; Chen, Hongyu

    2016-08-31

    World's smallest screws with helical threads are synthesized via mild etching of Ag nanowires. With detailed characterization, we show that this nanostructure arises not from the transformation of the initial lattice, but the result of a unique etching mode. Three-dimensional printed models are used to illustrate the evolution of etch pits, from which a possible mechanism is postulated. PMID:27513181

  20. Apparatus for edge etching of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Casajus, A.

    1986-01-01

    A device for use in the production of semiconductors, characterized by etching in a rapidly rotating etching bath is described. The fast rotation causes the surface of the etching bath to assume the form of a paraboloid of revolution, so that the semiconductor wafer adjusted at a given height above the resting bath surface is only attacked by etchant at the edges.

  1. Spotlight on lasers. A look at potential benefits

    SciTech Connect

    Zakariasen, K.L.; MacDonald, R.; Boran, T. )

    1991-07-01

    Before lasers can be highly integrated into clinical practice, further research must prove the efficacy, efficiency, consistency and safety of this new technology. Currently, increased caries prevention and rapid laser etching are two potential benefits of laser technology.

  2. Ion-beam-assisted etching of diamond

    NASA Technical Reports Server (NTRS)

    Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

    1985-01-01

    The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

  3. Plasmoids for etching and deposition

    NASA Astrophysics Data System (ADS)

    Pothiraja, Ramasamy; Bibinov, Nikita; Awakowicz, Peter

    2014-11-01

    In this manuscript we show fascinating properties of plasmoids, which are known to be self-sustained plasma entities, and can exist without being in contact with any power supply. Plasmoids are produced in a filamentary discharge in a Ar/CH4 mixture with a high production rate of about 105 s-1. It is observed that plasmoids etch the solid amorphous hydrocarbon film with high efficiency. Energy density of the plasmoid, which is estimated on the basis of glowing area of plasmoids in the photographic image and sublimation enthalpy of the etched hydrocarbon film, amounts to about 90 J m-3. This value is much lower than the energy density of observed ball lightning (natural plasmoid). A very surprising property is an attraction between plasmoids, and the formation of plasmoid-groups. Because of this attractive force, carbon material, which is collected in plasmoids by etching of the hydrocarbon film or by propagation through a methane/argon gas mixture, is compressed into crystals.

  4. Reactive Ion Etching of Polymers in Oxygen Based Plasmas: a Study of Etch Mechanisms.

    NASA Astrophysics Data System (ADS)

    Graham, Sandra Wolterman

    The reactive ion etching of polymers has been studied in oxygen-based plasmas in an effort to understand the contributions of various mechanisms to the etching of these materials. Of the four active etch mechanisms; surface damage promoted etching, chemical sputtering, chemically enhanced physical sputtering, and direct reactive ion etching; the emphasis of this work has been on determining the relative contribution of direct reactive ion etching to the overall etching process. The etching of photoresist, polyimide, and amorphous carbon in O_2-CF_4 plasmas was studied in an asymmetrical reactive ion etcher at pressures ranging from 5 to 100 mtorr. Etch yield, ion flux, and oxygen atom concentration data were collected. The fit of this data to a linear model proposed by Joubert et al. (J. Appl. Phys., 65, 1989, 5096) was compared to the fit of the data to a nonlinear model proposed by the author. The linear model accounts for contribution due to three of the four etch mechanisms, but does not include contributions due to direct reactive ion etching. The nonlinear model accounts for contributions due to all four etch mechanisms. Experimental results indicate that the nonlinear model provides a better fit to the data than does the linear model. The relative contribution of direct reactive ion etching to the etching of photoresist ranges from 27% to 81% as the pressure decreases from 100 to 5 mtorr. Similar results are obtained for polyimide and amorphous carbon.

  5. Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Saidi, H.; Hidouri, T.; Fraj, I.; Saidi, F.; Bouazizi, A.

    2015-09-01

    Using Ag-assisted chemical etching technique, vertical silicon nanowires (SiNWs) arrays on n-type (0 0 1) substrates has been prepared with different conditions such as etching time and illumination condition. A photoluminescence measurement at room temperature has shown a decrease of PL intensity when decreasing etching time. These results are attributed to the decrease of SiNWs density and reduction of laser capture surface. The presence of defect states lead to a non-radiative recombination. Indeed, the blue shift observed when using a low etching time is due to the confinement effect. Using a low etching time, illumination condition does not vary SiNWs density. The optimal experimental condition for photovoltaic application is observed after deposition of Poly (3-hexylthiophene-2,5-diyl) P3HT into the different silicon substrates prepared. An important charges transfer between P3HT and SiNWs is observed for high etching time (120 min under illumination). A blue shift is due to the presence of defects and electric field.

  6. Laser labeling, a safe technology to label produce

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Laser labeling of fruits and vegetables is an alternative means to label produce. Low energy CO2 laser beams etch the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allow for entry of decay organisms. The long-term effects of laser labe...

  7. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  8. The effect of Er:YAG laser irradiation on hydroxyapatite-coated implants and fluoride-modified TiO2-blasted implant surfaces: a microstructural analysis.

    PubMed

    Shin, Seung-Il; Lee, Eun-Kwon; Kim, Jeong-Hyun; Lee, Ji-Hun; Kim, Sun-Hee; Kwon, Young-Hyuk; Herr, Yeek; Chung, Jong-Hyuk

    2013-05-01

    The purpose of this study was to evaluate the microscopic changes and surface roughness on hydroxyapatite (HA)-coated implants following exposure to different powers and durations of Er:YAG laser irradiation in order to determine the proper pulse energy level and irradiation time. Ten HA-coated implants and ten fluoride-modified TiO2 implants were used. The implants were divided into a control (one implant) and test group (nine implants) for each implant type. Implants in the test groups were sub-divided into three groups (three implants per group) based on the applied laser pulse energy and irradiation time. The measurement of surface roughness was performed on all implants in the test groups using a white light interferometer before and after laser irradiation. R a values were recorded and compared in order to evaluate changes in surface roughness. For HA-coated implants, the R a values increased in all test groups after laser irradiation. However, mean R a values in the fluoride-modified TiO2-blasted implant test group were decreased after irradiation. There was no statistical difference. Scanning electron microscope analysis revealed surface alterations in both the HA-coated and fluoridated TiO2-blasted implants irradiated for 1.5 min at 100 mJ/pulse, 10 Hz. When the pulse energy and irradiation time increased, greater surface alterations, including surface flattening and microfractures, were observed. In conclusion, the results of the current study suggest that no changes could be observed in both HA-coated implants and fluoride-modified TiO2-blasted implants after irradiation at an intensity of 100 mJ/pulse, 10 Hz for 1 min performed to achieve surface detoxification. PMID:22833287

  9. Sub millimeter absorption spectroscopy of oxygen containing fluorocarbon etching plasmas

    NASA Astrophysics Data System (ADS)

    Benck, Eric; Siegrist, Karen

    2004-09-01

    The role of oxygen in fluorocarbon etching plasmas is investigated using sub millimeter wavelength absorption spectroscopy. The plasmas were created in a specially modified capacitively coupled Gaseous Electronics Conference (GEC) Reference Reactor with a commercial electrostatic chuck. Photoresist and SiO2 blanket coated wafers were etched in C_4F_8/O_2/Ar, C_5F_8/O_2/Ar, and C_4F_6/O_2/Ar discharges. The absolute density of various radicals (CF, CF_2, CHF_3, COF_2, CO, etc.) were measured as a function of the percentage of oxygen in the feed gas mixture using a sub millimeter source based on a 48x frequency multiplication chain. These results are also compared with C_xF_y/O_2/Xe mixtures.

  10. Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

    NASA Astrophysics Data System (ADS)

    Lee, Honyoung; Jang, Haegyu; Lee, Hak-Seung; Chae, Heeyeop

    2015-09-01

    Plasma etching process is the core process in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist, dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0% oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD. Plasma Etch, EPD, K-means Cluster Analysis.

  11. Fabrication of microlens arrays in photosensitive glass by femtosecond laser direct writing

    NASA Astrophysics Data System (ADS)

    Lin, C. H.; Jiang, L.; Chai, Y. H.; Xiao, H.; Chen, S. J.; Tsai, H. L.

    2009-12-01

    This article reports the fabrication of high-fill-factor plano-convex cylindrical and spherical microlens arrays horizontally and vertically embedded in a photosensitive Foturan glass chip by femtosecond (fs) laser micromachining. The microlens arrays were fabricated by modifying the microstructure of Foturan glass using fs laser direct writing followed by thermal treatment, wet etching, and additional annealing. The focusing ability and image quality of the microlens arrays were examined, showing that the lens arrays not only can focus light well but also provide an imaging capability that holds great potential for lab-on-a-chip applications.

  12. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  13. Etching radical controlled gas chopped deep reactive ion etching

    DOEpatents

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  14. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  15. Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching.

    PubMed

    Jiang, Bing; Li, Meicheng; Liang, Yu; Bai, Yang; Song, Dandan; Li, Yingfeng; Luo, Jian

    2016-02-01

    The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies. PMID:26785718

  16. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  17. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  18. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  19. Formation of CuO on thermal and laser-induced oxidation of Cu3N thin films prepared by modified activated reactive evaporation

    NASA Astrophysics Data System (ADS)

    Sahoo, Guruprasad; Jain, Mahaveer K.

    2015-03-01

    Copper oxide (CuO) thin films were prepared by direct oxidation of modified activated reactive evaporated copper nitride (Cu3N) thin films in air ambience. When annealed in air at higher temperatures, Cu3N films undergo complete decomposition and the residual Cu gets easily bonded with the atmospheric oxygen to form CuO. Annealing provides required activation energy for the formation of CuO. The formation of fairly crystallized CuO was confirmed by X-ray diffraction and Raman spectroscopy studies. However, the crystallite size of CuO films is smaller than their corresponding Cu3N phase. The surface morphology of the CuO films obtained through this method shows grains of non-uniform size distribution. Furthermore, Raman spectra on the as-grown Cu3N films were taken by varying the laser power. At higher laser power, microscopic CuO dots are formed due to laser-induced oxidation. It is proposed that p-type CuO can be easily grown over suitably prepared n-type Cu3N by local heating or laser irradiation in air.

  20. Conjunctive effects of the 5HT(2) receptor antagonist, sarpogrelate, on thrombolysis with modified tissue plasminogen activator in different laser-induced thrombosis models.

    PubMed

    Yamashita, T; Kitamori, K; Hashimoto, M; Watanabe, S; Giddings, J C; Yamamoto, J

    2000-01-01

    The effect of the serotonin (5HT(2)) receptor antagonist, sarpogrelate, was compared with that of the selective thrombin inhibitor, argatroban, in modified tissue plasminogen activator (mt-PA)-induced thrombolysis using two laser-induced thrombosis models reflecting different levels of vascular endothelial cell damage. Bolus intravenous infusions of mt-PA (0.1, 0.2, 0.4 mg/kg) induced thrombolysis in a dose-dependent manner. Sarpogrelate (4.7 mg/kg b.i. + 1.0 mg/kg/h i.v.) given together with mt-PA (0.2 mg/kg b.i.) optimally enhanced thrombolysis (p < 0.05) in a helium-neon laser-induced model where endothelial damage was minimal but not in an argon laser model where desquamation of endothelial cells was recognized. In contrast, argatroban (0.5 mg/kg b.i. + 0.1 mg/kg/h i.v.) given with mt-PA (0.2 mg/kg b.i.) significantly enhanced thrombolysis in both laser models. The findings indicate that the effectiveness of sarpogrelate in thrombolytic therapy might depend on the extent of vascular damage. PMID:11357001

  1. Study on laser welding of fuel clad tubes and end plugs made of modified 9Cr-1Mo steel for metallic fuel of Fast Breeder Reactors

    NASA Astrophysics Data System (ADS)

    Harinath, Y. V.; Gopal, K. A.; Murugan, S.; Albert, S. K.

    2013-04-01

    A procedure for Pulsed Laser Beam Welding (PLBW) has been developed for fabrication of fuel pins made of modified 9Cr-1Mo steel for metallic fuel proposed to be used in future in India's Fast Breeder Reactor (FBR) programme. Initial welding trials of the samples were carried out with different average power using Nd-YAG based PLBW process. After analyzing the welds, average power for the weld was optimized for the required depth of penetration and weld quality. Subsequently, keeping the average power constant, the effect of various other welding parameters like laser peak power, pulse frequency, pulse duration and energy per pulse on weld joint integrity were studied and a procedure that would ensure welds of acceptable quality with required depth of penetration, minimum size of fusion zone and Heat Affected Zone (HAZ) were finalized. This procedure is also found to reduce the volume fraction delta-ferrite in the fusion zone.

  2. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  3. Surface modification of Ti dental implants by Nd:YVO 4 laser irradiation

    NASA Astrophysics Data System (ADS)

    Braga, Francisco J. C.; Marques, Rodrigo F. C.; Filho, Edson de A.; Guastaldi, Antonio C.

    2007-09-01

    Surface modifications have been applied in endosteal bone devices in order to improve the osseointegration through direct contact between neoformed bone and the implant without an intervening soft tissue layer. Surface characteristics of titanium implants have been modified by addictive methods, such as metallic titanium, titanium oxide and hydroxyapatite powder plasma spray, as well as by subtractive methods, such as acid etching, acid etching associated with sandblasting by either AlO 2 or TiO 2, and recently by laser ablation. Surface modification for dental and medical implants can be obtained by using laser irradiation technique where its parameters like repetition rate, pulse energy, scanning speed and fluency must be taken into accounting to the appropriate surface topography. Surfaces of commercially pure Ti (cpTi) were modified by laser Nd:YVO 4 in nine different parameters configurations, all under normal atmosphere. The samples were characterized by SEM and XRD refined by Rietveld method. The crystalline phases αTi, βTi, Ti 6O, Ti 3O and TiO were formed by the melting and fast cooling processes during irradiation. The resulting phases on the irradiated surface were correlated with the laser beam parameters. The aim of the present work was to control titanium oxides formations in order to improve implants osseointegration by using a laser irradiation technique which is of great importance to biomaterial devices due to being a clean and reproducible process.

  4. Microstructure performance and formation mechanism of laser alloying rare earth oxides modified nanocrystalline layer on TA7

    NASA Astrophysics Data System (ADS)

    Ma, Qingyu; Gao, Xun; Li, Jianquan

    2016-03-01

    Nanoscale particles (NP) were observed in a Ni60-Ag-Si3N4-Y2O3 laser alloying (LA) layer on a TA7 titanium alloy, NP usually locate on the grain boundaries, which are able to block the motion of dislocation in a certain extent. Such layer mainly consisted of γ-Ni, TiN, γ-(Fe, Ni), TiAg and lots of amorphous phases. The wear resistance of such layer with laser scanning speed 3 mm/s was better than that of a LA layer with 6 mm/s, which was mainly ascribed to an uniform microstructure and less defect of layer. The high laser scanning speed made the existing time of laser molten pool be shorter than before, favoring the formation of a fine microstructure. However, the defects, such as pores were produced in LA layer (higher scanning speed), decreasing the wear resistance.

  5. Atmospheric pressure matrix-assisted laser desorption/ionization mass spectrometry of friction modifier additives analyzed directly from base oil solutions.

    PubMed

    Widder, Lukas; Brennerb, Josef; Huttera, Herbert

    2014-01-01

    To develop new products and to apply measures of quality control quick and simple accessibility of additive composition in automo- tive lubrication is important. The aim of this study was to investigate the possibility of analyzing organic friction modifier additives by means of atmospheric pressure matrix-assisted laser desorption/ionization mass spectrometry [AP-MALDI-MS] from lubricant solu- tions without the use of additional separation techniques. Analyses of selected friction modifier ethoxylated tallow amines and oleic acid amide were compared using two ionization methods, positive-ion electrospray ionization (ESI) and AP-MALDI, using a LTQ Orbitrap mass spectrometer. Pure additives were characterized from solvent solutions, as well as from synthetic and mineral base oil mixtures. Detected ions of pure additive samples consisted mainly of [M + H]+, but also alkaLi metal adducts [M + Na]+ and [M + K]+ could be seen. Characterizations of blends of both friction modifiers from the base oil mixtures were carried out as well and showed significant inten- sities for several additive peaks. Thus, this work shows a method to directly analyze friction modifier additives used in the automotive industry from an oil blend via the use of AP-MALDI without any further separation steps. The method presented will further simplify the acquisition of data on lubricant composition and additives. Furthermore, it allows the perspective of analyzing additive reaction products directly from formulated oil blends. PMID:25507326

  6. Atmospheric pressure matrix-assisted laser desorption/ionization mass spectrometry of friction modifier additives analyzed directly from base oil solutions.

    PubMed

    Widder, Lukas; Brennerb, Josef; Huttera, Herbert

    2014-01-01

    To develop new products and to apply measures of quality control quick and simple accessibility of additive composition in automo- tive lubrication is important. The aim of this study was to investigate the possibility of analyzing organic friction modifier additives by means of atmospheric pressure matrix-assisted laser desorption/ionization mass spectrometry [AP-MALDI-MS] from lubricant solu- tions without the use of additional separation techniques. Analyses of selected friction modifier ethoxylated tallow amines and oleic acid amide were compared using two ionization methods, positive-ion electrospray ionization (ESI) and AP-MALDI, using a LTQ Orbitrap mass spectrometer. Pure additives were characterized from solvent solutions, as well as from synthetic and mineral base oil mixtures. Detected ions of pure additive samples consisted mainly of [M + H]+, but also alkaLi metal adducts [M + Na]+ and [M + K]+ could be seen. Characterizations of blends of both friction modifiers from the base oil mixtures were carried out as well and showed significant inten- sities for several additive peaks. Thus, this work shows a method to directly analyze friction modifier additives used in the automotive industry from an oil blend via the use of AP-MALDI without any further separation steps. The method presented will further simplify the acquisition of data on lubricant composition and additives. Furthermore, it allows the perspective of analyzing additive reaction products directly from formulated oil blends. PMID:25420342

  7. R2O3 (R = La, Y) modified erbium activated germanate glasses for mid-infrared 2.7 μm laser materials

    PubMed Central

    Cai, Muzhi; Zhou, Beier; Wang, Fengchao; Wei, Tao; Tian, Ying; Zhou, Jiajia; Xu, Shiqing; Zhang, Junjie

    2015-01-01

    Er3+ activated germanate glasses modified by La2O3 and Y2O3 with good thermal stability were prepared. 2.7 μm fluorescence was observed and corresponding radiative properties were investigated. A detailed discussion of J–O parameters has been carried out based on absorption spectra and Judd–Ofelt theory. The peak emission cross sections of La2O3 and Y2O3 modified germanate glass are (14.3 ± 0.10) × 10−21 cm2 and (15.4 ± 0.10) × 10−21 cm2, respectively. Non-radiative relaxation rate constants and energy transfer coefficients of 4I11/2 and 4I13/2 levels have been obtained and discussed to understand the 2.7 μm fluorescence behavior. Moreover, the energy transfer processes of 4I11/2 and 4I13/2 level were quantitatively analyzed according to Dexter’s theory and Inokuti–Hirayama model. The theoretical calculations are in good agreement with the observed 2.7 μm fluorescence phenomena. Results demonstrate that the Y2O3 modified germanate glass, which possesses more excellent spectroscopic properties than La2O3 modified germanate glass, might be an attractive candidate for mid-infrared laser. PMID:26279092

  8. R2O3 (R = La, Y) modified erbium activated germanate glasses for mid-infrared 2.7 μm laser materials

    NASA Astrophysics Data System (ADS)

    Cai, Muzhi; Zhou, Beier; Wang, Fengchao; Wei, Tao; Tian, Ying; Zhou, Jiajia; Xu, Shiqing; Zhang, Junjie

    2015-08-01

    Er3+ activated germanate glasses modified by La2O3 and Y2O3 with good thermal stability were prepared. 2.7 μm fluorescence was observed and corresponding radiative properties were investigated. A detailed discussion of J-O parameters has been carried out based on absorption spectra and Judd-Ofelt theory. The peak emission cross sections of La2O3 and Y2O3 modified germanate glass are (14.3 ± 0.10) × 10-21 cm2 and (15.4 ± 0.10) × 10-21 cm2, respectively. Non-radiative relaxation rate constants and energy transfer coefficients of 4I11/2 and 4I13/2 levels have been obtained and discussed to understand the 2.7 μm fluorescence behavior. Moreover, the energy transfer processes of 4I11/2 and 4I13/2 level were quantitatively analyzed according to Dexter’s theory and Inokuti-Hirayama model. The theoretical calculations are in good agreement with the observed 2.7 μm fluorescence phenomena. Results demonstrate that the Y2O3 modified germanate glass, which possesses more excellent spectroscopic properties than La2O3 modified germanate glass, might be an attractive candidate for mid-infrared laser.

  9. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  10. ECR etching of group-III nitride binary and ternary films

    SciTech Connect

    Shul, R.J.; Howard, A.J.; Pearton, S.J.

    1995-10-01

    Due to their wide band gaps and high dielectric constants, the group III-nitrides have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs) and for their potential use in laser structures and high temperature electronics. Processing of these materials, in particular wet and dry etching, has proven to be extremely difficult due to their inert chemical nature. We report electron cyclotron resonance (ECR) etch rates for GaN, InN, AlN, In{sub (x)}Ga{sub (1-x)}Ni and In{sub (x)}Al{sub (1-x)}N as a function of temperature, rf-power, pressure, and microwave power. Etch conditions are characterized for rate, profile, and sidewall and surface morphology. Atomic force microscopy (AFM) is used to quantify RMS roughness of the etched surfaces. We observe consistent trends for the InAlN films where the etch rates increase with increasing concentration of In. The trends are far less consistent for the InGaN with a general decrease in etch rate as the In concentration is increased.

  11. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    NASA Astrophysics Data System (ADS)

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-01

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  12. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    SciTech Connect

    Dang, Z. Y.; Breese, M. B. H.; Lin, Y.; Tok, E. S.; Vittone, E.

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  13. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  14. Etching Behavior of Aluminum Alloy Extrusions

    NASA Astrophysics Data System (ADS)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  15. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  16. Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch-Resistant Material

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Akira; Hinoura, Ryo; Toyoda, Noriaki; Hara, Ken-ichi; Yamada, Isao

    2013-05-01

    Gas cluster ion beam (GCIB) etching of etch-resistant materials under acetic acid vapor was studied for development of new manufacturing process of future nonvolatile memory. Etching depths of various etch-resistant materials (Pt, Ru, Ta, CoFe) with acetic acid vapor during O2-GCIB irradiations were 1.8-10.7 times higher than those without acetic acid. Also, etching depths of Ru, Ta, CoFe by Ar-GCIB with acetic acid vapor were 2.2-16.1 times higher than those without acetic acid. Even after etching of Pt, smoothing of Pt was realized using O2-GCIB under acetic acid. From XPS and angular distribution of sputtered Pt, it was shown that PtOx layer was formed on Pt after O2-GCIB irradiation. PtOx reacted with acetic acid by GCIB bombardments; as a result, increase of etching depth was observed.

  17. Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

    NASA Astrophysics Data System (ADS)

    Ren, Z.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.; Yu, S.

    2008-02-01

    The etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO3 have been fabricated and optically measured.

  18. Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

    NASA Astrophysics Data System (ADS)

    Yokoyama, Meiso; Li, Jiin; Su, Shui; Su, Yan

    1994-12-01

    Indium-tin oxide (ITO) films coated on glass have been etched by reactive ion etching (RIE) with a gas mixture of Ar and Cl2. The etching rates of ITO films depend strongly on power density, gas pressure, the composition of reactive gases, and the total flow rate of etchants. According to the results from the study, we can postulate that the ITO films' etching follows the ion-assisted chemical etching. A high etching rate above 100 Å/min can be achieved, and an etching mechanism will be proposed. The selectivity of ITO films to glass reaches 35 with a 30 line/mm pattern. After exposure of ITO films to an Ar/Cl2 mixed gas plasma discharge, their sheet resistance does not markedly change. The residue of Cl atoms exists only in the region near the surface. By means of parameter control, we can obtain good pattern images of ITO films measured by scanning electron microscopy (SEM).

  19. Etch-a-Sketch Nanoelectronics

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    2009-10-01

    The popular children's toy Etch-a-Sketch has motivated the invention of a new material capable of writing and erasing wires so small they approach the spacing between atoms. The interface between two normally insulating materials, strontium titanate and lanthanum aluminate, can be switched between the insulating and conducting state with the use of the sharp metallic probe of an atomic-force microscope. By ``sketching'' this probe in various patterns, one can create electronic materials with remarkably diverse properties. This material system shows promise both for ultra-high density storage and as possible replacements for silicon-based logic (CMOS). This work is supported by the National Science Foundation, Defense Advanced Research Projects Agency, Army Research Office and Air Force Office of Scientific Research.

  20. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  1. Study of microstructure and silicon segregation in cast iron using color etching and electron microprobe analysis

    SciTech Connect

    Vazehrad, S.; Diószegi, A.

    2015-06-15

    An investigation on silicon segregation of lamellar, compacted and nodular graphite iron was carried out by applying a selective, immersion color etching and a modified electron microprobe to study the microstructure. The color etched micrographs of the investigated cast irons by revealing the austenite phase have provided data about the chronology and mechanism of microstructure formation. Moreover, electron microprobe has provided two dimensional segregation maps of silicon. A good agreement was found between the segregation profile of silicon in the color etched microstructure and the silicon maps achieved by electron microprobe analysis. However, quantitative silicon investigation was found to be more accurate than color etching results to study the size of the eutectic colonies. - Highlights: • Sensitivity of a color etchant to silicon segregation is quantitatively demonstrated. • Si segregation measurement by EMPA approved the results achieved by color etching. • Color etched micrographs provided data about solidification mechanism in cast irons. • Austenite grain boundaries were identified by measuring the local Si concentration.

  2. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    SciTech Connect

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  3. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  4. Etching studies on lutetium yttrium orthosilicate LuxY2-xSiO5:Ce (LYSO) scintillator crystals

    NASA Astrophysics Data System (ADS)

    Péter, Á.; Berze, N.; Lengyel, K.; Lörincz, E.

    2010-11-01

    Surface dissolution has been investigated on {100}, {010}, {001}, {110} and {101} oriented Lu1.6Y0.4SiO5:Ce crystal samples by using orthophosphoric acid up to 180°C. Depending on the etching temperature and surface orientation smooth or bunched surfaces were produced. In order to study the effect of the etching process on the scintillation properties temperature dependent optical absorption measurements were carried out up to 236°C. It was found that depending on the post-growth history of the sample, etching may influence the scintillation mechanism by modifying the concentration of shallow traps.

  5. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  6. Nanoparticle-based etching of silicon surfaces

    SciTech Connect

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  7. Galvanic etch stop for Si in KOH

    NASA Astrophysics Data System (ADS)

    Connolly, E. J.; French, P. J.; Xia, X. H.; Kelly, J. J.

    2004-08-01

    Etch stops and etch-stopping techniques are essential 'tools' for 2D and 3D MEMS devices. Until now, use of a galvanic etch stop (ES) for micromachining in alkaline solutions was usually prohibited due to the large Au:Si area needed and/or high oxygen content required to achieve the ES. We report a new galvanic ES which requires a Au:exposed silicon area ratio of only ~1. Thus for the first time a practical galvanic ES for KOH has been achieved. The ES works by adding small amounts of sodium hypochlorite, NaOCl, to KOH solutions. Essentially the NaOCl increases the oxygen content in the KOH etchant. The dependancy of the galvanic ES on KOH concentration and temperature is investigated. Also, we report on the effects of the added NaOCl on etch rates. SEM images are used to examine the galvanically etch-stopped membranes and their surface morphology. For 33% KOH solutions the galvanic etch stop worked well, producing membranes with uniform thickness ~6 µm (i.e. slightly greater than the deposited epilayer). For 20% KOH solutions, the galvanic etch stop still worked, but the resulting membranes were a little thicker (~10 µm).

  8. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  9. Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

    NASA Astrophysics Data System (ADS)

    Morioka, Naoya; Suda, Jun; Kimoto, Tsunenobu

    2014-01-01

    The etching-limiting step in slow Si etching with HCl/H2 at atmospheric pressure was investigated. The etching was performed at a low etching rate below 10 nm/min in the temperature range of 1000-1100 °C. In the case of bare Si etching, it was confirmed that the etching rate showed little temperature dependence and was proportional to the equilibrium pressure of the etching by-product SiCl2 calculated by thermochemical analysis. In addition, the etching rates of Si(100) and (110) faces were almost the same. These results indicate that SiCl2 diffusion in the gas phase is the rate-limiting step. In the etching of the Si surface with SiO2 mask patterns, a strong loading effect (mask/opening pattern dependence of the etching rate) was observed. The simulation of the diffusion of gas species immediately above the Si surface revealed that the loading effect was attributed to the pattern-dependent diffusion of SiCl2.

  10. Modified-Atmospheric Pressure-Matrix Assisted Laser Desorption/Ionization Identification of Friction Modifier Additives Oleamide and Ethoxylated Tallow Amines on Varied Metal Target Materials and Tribologically Stressed Steel Surfaces.

    PubMed

    Widder, Lukas; Ristic, Andjelka; Brenner, Florian; Brenner, Josef; Hutter, Herbert

    2015-11-17

    For many tasks in failure and damage analysis of surfaces deteriorated in heavy tribological contact, the detailed characterization of used lubricants and their additives is essential. The objective of the presented work is to establish accessibility of tribostressed surfaces for direct characterization via modified atmospheric pressure-matrix assisted laser desorption/ionization-mass spectrometry (m-AP-MALDI-MS). Special target holders were constructed to allow target samples of differing shape and form to fit into the desorption/ionization chamber. The best results of desorption and ionization on different target materials and varying roughnesses were achieved on smooth surfaces with low matrix/substrate interaction. M-AP-MALDI characterization of tribologically stressed steel surfaces after pin-on-disc sliding wear tests (SRV-tribotests) yielded positive identification of used friction modifier additives. Further structure elucidation by electrospray ionization mass spectrometry (ESI-MS) and measurements of worn surfaces by time-of-flight-secondary ion mass spectrometry (TOF-SIMS) accompanied findings about additive behavior and deterioration during tribological contact. Using m-AP-MALDI for direct offline examinations of worn surfaces may set up a quick method for determination of additives used for lubrication and general characterization of a tribological system. PMID:26491812

  11. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  12. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  13. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  14. Etching Semiconductors With Beams Of Reactive Atoms

    NASA Technical Reports Server (NTRS)

    Minton, Timothy K.; Giapis, Konstantinos P.; Moore, Teresa A.

    1995-01-01

    Method of etching semiconductors with energetic beams of electrically neutral, but chemically reactive, species undergoing development. Enables etching of straight walls into semiconductor substrates at edges of masks without damage to underlying semiconductor material. In addition to elimination of charge damage, technique reduces substrate bombardment damage because translational energy of neutral species in range 2-12 eV, below damage threshold of many semiconductor materials. Furthermore, low-energy neutrals cause no mask erosion allowing for etching features with very high aspect ratios.

  15. Femtosecond Nanostructuring of Glass with Optically Trapped Microspheres and Chemical Etching.

    PubMed

    Shakhov, A; Astafiev, A; Gulin, A; Nadtochenko, V

    2015-12-16

    Laser processing with optically trapped microspheres is a promising tool for nanopatterning at subdiffraction-limited resolution in a wide range of technological and biomedical applications. In this paper, we investigate subdiffraction-limited structuring of borosilicate glass with femtosecond pulses in the near-field of optically trapped microspheres combined with chemical postprocessing. The glass surface was processed by single laser pulses at 780 nm focused by silica microspheres and then subjected to selective etching in KOH, which produced pits in the laser-affected zones (LAZs). Chemical postprocessing allowed obtaining structures with better resolution and reproducibility. We demonstrate production of reproducible pits with diameters as small as 70 nm (λ/11). Complex two-dimensional structures with 100 nm (λ/8) resolution were written on the glass surface point by point with microspheres manipulated by optical tweezers. Furthermore, the mechanism of laser modification underlying selective etching was investigated with mass spectrum analysis. We propose that the increased etching rate of laser-treated glass results from changes in its chemical composition and oxygen deficiency. PMID:26600213

  16. A Simulation of Laser Ablation During the Laser Pulse

    NASA Astrophysics Data System (ADS)

    Suzuki, Motoyuki; Ventzek, Peter L. G.; Sakai, Y.; Date, H.; Tagashira, H.; Kitamori, K.

    1996-10-01

    Charge damage considerations in plasma assisted etching are prompting the development of neutral beam sources. Already, anisotropic etching of has been demonstrated by neutral beams generated by exhausting heated ecthing gases into vacuum via a nozzle. Laser ablation of condensed etching gases may also be an attractive alternative means of generating neutral beams. Laser ablation coupled with electrical breakdown of the ablation plume may afford some degree of control over a neutral beam's dissociation fraction and ion content. Results from a Monte Carlo simulation of the laser ablation plume as it expands into vacuum at time-scales during the laser pulse will be presented. The model includes both heavy particle interactions and photochemistry. In particular, the influence of the initial particle angular distribution on the beam spread will be demonstrated as will the relationship between laser beam energy and initial ionization and dissociation fraction.

  17. Laser labeling, a safe technology to label produce

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Labeling of the produce has gained marked attention in recent years. Laser labeling technology involves the etching of required information on the surface using a low energy CO2 laser beam. The etching forms alphanumerical characters by pinhole dot matrix depressions. These openings can lead to wat...

  18. Anisotropic etching of monocrystalline silicon under subcritical conditions

    NASA Astrophysics Data System (ADS)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  19. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  20. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    DOEpatents

    Ashby, Carol I. H.; Myers, David R.

    1992-01-01

    The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

  1. Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer

    NASA Astrophysics Data System (ADS)

    Mizumura, Michinobu; Fukuyama, Ryouji; Oomoto, Yutaka

    2002-04-01

    We investigated the trade-off between the increase of etch rate and the control of subtrenching in H2/N2 etching of a SiLK film (SiLK is a trademark of The Dow Chemical Company) without an etch stop layer for a Cu/low-k dual damascene structure. Based on our results, it is clear that the re-incident distribution of the reaction product influenced the mechanism of subtrenching strongly. As H etchant had the ability to remove the reaction product efficiently, we have successfully obtained good etching performance (an average etch rate of 128 nm/min, no subtrenching, and an etch rate uniformity of 8.9% within a 200 mm wafer) using an H2 high-flow-rate process in order to increase the amount of H etchant.

  2. Effect of addition of chitosan to self-etching primer: antibacterial activity and push-out bond strength to radicular dentin

    PubMed Central

    Elsaka, Shaymaa; Elnaghy, Amr

    2012-01-01

    The purpose of this study was to evaluate the antibacterial activity of a modified self-etching primer incorporating chitosan and whether this modification affected the bond strength to radicular dentin. A modified self-etching primer was prepared by adding chitosan solutions at 0.03%, 0.06%, 0.12% and 0.25% (W/W) to RealSeal selfe-tching primer. RealSeal primer without chitosan was used as the control. The antibacterial activity of the modified self-etching primer was evaluated using the direct contact test against Enterococcus faecalis. The bonding ability of the RealSeal system to radicular dentin was evaluated using the push-out bond strength test. The modes of failure were examined under a stereomicroscope. Data were analyzed using analysis of variance (ANOVA) and Tukey's test, with a P-value < 0.05 indicating statistical significance. The results showed that the antibacterial properties of the freshly prepared and aged modified self-etching primer incorporating chitosan exhibited potent antibacterial effect against Enterococcus faecalis compared with the unmodified primer. The RealSeal system with the aged modified self-etching primer incorporating chitosan showed no significant differences in the bond strength as compared with the control (P = 0.99). The findings suggest that modified self-etching primer incorporating chitosan is a promising antibacterial primer which does not adversely affect the bond strength of the RealSeal system to radicular dentin. PMID:23554762

  3. Modified Truncated Cone Target Hyperthermal Atomic Oxygen Test Results

    NASA Technical Reports Server (NTRS)

    Vaughn, J. A.; Kamenetsky, R. R.; Finckenor, M. M.

    1999-01-01

    The modified truncated cone target is a docking target planned for use on the International Space Station. The current design consists of aluminum treated with a black dye anodize, then crosshairs are laser etched for a silvery color. Samples of the treated aluminum were exposed to laboratory simulation of atomic oxygen and ultraviolet radiation to determine if significant degradation might occur. Durability was evaluated based on the contrast ratio between the black and silvery white areas of the target. Degradation of optical properties appeared to level off after an initial period of exposure to atomic oxygen. The sample that was not alodined according to MIL-C-5541, type 1A, performed better than alodined samples.

  4. Epoxy bond and stop etch fabrication method

    DOEpatents

    Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.

    2000-01-01

    A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

  5. Metal assisted anodic etching of silicon

    NASA Astrophysics Data System (ADS)

    Lai, Chang Quan; Zheng, Wen; Choi, W. K.; Thompson, Carl V.

    2015-06-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P+-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N+-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si.Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P+-type and N+-type Si wafers and a wide range of nanostructure morphologies were observed

  6. Ion-beam-modified surfaces as substrates for hydroxyapatite growth induced by laser-liquid-solid interaction

    NASA Astrophysics Data System (ADS)

    Pramatarova, Liliana; Pecheva, Emilia; Petrov, Todor S.; Minkovski, Nikolai I.; Kondyurin, Alexey; Pramatarova, Radina

    2004-06-01

    In this study stainless steel, silicon and silica glass are used as representatives of metal, semiconductor and isolator with the purpose to create an experimental model for studying the formation of minerals like hydroxyapatite (HA, the bone and teeth mineral part) from aqueous solutions. The samples are Na+ implanted and consequently subjected to thermal treatment in air at 873 K. Implantation with Na+ is known to lead to formation of hydroxylated surface, i.e. formation of metal- or Si-OH- groups upon immersion in a liquid, simulating the human blood plasma (simulated body fluid, SBF). The negatively charged hydroxylated surfaces induce HA formation in SBF. The samples are immersed in SBF, irradiated through the solution with a scanning laser beam (CuBr pulsed laser equipped with a scanning system) and subsequently soaked in the solution at 37°C for a shorter time, comparing to the traditional methods for HA growing. The grown HA layers are investigated by Fourier Transform Infrared (FTIR) and Raman Spectroscopies, X-ray Diffraction (XRD), Light Microscopy (LM), Scanning Electron Microscopy (SEM), and Energy Dispersive X-ray (EDX) Spectroscopy to evaluate the effect of the surface modification by the thermal treatment following the ion implantation, as well as the effect of the laser irradiation on the process of HA formation.

  7. Method for anisotropic etching in the manufacture of semiconductor devices

    DOEpatents

    Koontz, Steven L.; Cross, Jon B.

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

  8. Method for anisotropic etching in the manufacture of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

    1993-01-01

    Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

  9. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

    NASA Astrophysics Data System (ADS)

    Qiu, Rongfu; Lu, Hai; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2011-01-01

    Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.

  10. Process for etching mixed metal oxides

    DOEpatents

    Ashby, C.I.H.; Ginley, D.S.

    1994-10-18

    An etching process is described using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstrom range may be achieved by this method. 1 fig.

  11. Process for etching mixed metal oxides

    DOEpatents

    Ashby, Carol I. H.; Ginley, David S.

    1994-01-01

    An etching process using dicarboxylic and tricarboxylic acids as chelating etchants for mixed metal oxide films such as high temperature superconductors and ferroelectric materials. Undesirable differential etching rates between different metal oxides are avoided by selection of the proper acid or combination of acids. Feature sizes below one micron, excellent quality vertical edges, and film thicknesses in the 100 Angstom range may be achieved by this method.

  12. Metal assisted anodic etching of silicon.

    PubMed

    Lai, Chang Quan; Zheng, Wen; Choi, W K; Thompson, Carl V

    2015-07-01

    Metal assisted anodic etching (MAAE) of Si in HF, without H2O2, is demonstrated. Si wafers were coated with Au films, and the Au films were patterned with an array of holes. A Pt mesh was used as the cathode while the anodic contact was made through either the patterned Au film or the back side of the Si wafer. Experiments were carried out on P-type, N-type, P(+)-type and N(+)-type Si wafers and a wide range of nanostructure morphologies were observed, including solid Si nanowires, porous Si nanowires, a porous Si layer without Si nanowires, and porous Si nanowires on a thick porous Si layer. Formation of wires was the result of selective etching at the Au-Si interface. It was found that when the anodic contact was made through P-type or P(+)-type Si, regular anodic etching due to electronic hole injection leads to formation of porous silicon simultaneously with metal assisted anodic etching. When the anodic contact was made through N-type or N(+)-type Si, generation of electronic holes through processes such as impact ionization and tunnelling-assisted surface generation were required for etching. In addition, it was found that metal assisted anodic etching of Si with the anodic contact made through the patterned Au film essentially reproduces the phenomenology of metal assisted chemical etching (MACE), in which holes are generated through metal assisted reduction of H2O2 rather than current flow. These results clarify the linked roles of electrical and chemical processes that occur during electrochemical etching of Si. PMID:26059556

  13. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  14. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  15. Investigation of Nitride Morphology After Self-Aligned Contact Etch

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

  16. Stability and on-off chaotic states mechanisms of semiconductor lasers with optical injection on the new modified rate equation model

    NASA Astrophysics Data System (ADS)

    Mengue, A. D.; Essimbi, B. Z.

    2012-02-01

    In this paper, we consider the modified single-mode rate equations for a semiconductor laser (SCL) subjected to optical injection. In addition to the well-known control parameters of this kind of system, a new control one, namely the effective gain coefficient (EGC), interferes especially with its nonlinear dynamics. A stability analysis reveals that the unstable locking regions are drastically influenced by EGC, and this can contribute towards improving its accuracy. The generation and destruction of chaotic states through the period-doubling bifurcation route lead to the strengthening of these states. Furthermore, various phenomena such as intermittency bifurcation around the period windows, the general behavior of the SCL systems at the onset of the quasi-periodic regime near the coherence collapse regime and the nonlinear dynamic route sequences to the limit value of the EGC were studied with regard to the impact of this new control parameter.

  17. Wavelength Dependence of UV Effect on Etch Rate and Noise in CR-39

    NASA Astrophysics Data System (ADS)

    Wiesner, Micah; Traynor, Nathan; McLean, James; Padalino, Stephen; Sangster, Craig; McCluskey, Michelle

    2014-10-01

    The use of CR-39 plastic as a SSNTD is an effective technique for recovering data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched at elevated temperatures with NaOH, producing signal pits at the nuclear track sites that are measurable by an optical microscope. CR-39 pieces also exhibit etch-induced noise, either surface roughness or pit-like features not caused by nuclear particles, which negatively affects the ability of observers to distinguish actual pits. When CR-39 is exposed to high intensity UV light after nuclear irradiation and before etching, an increase in etch rates and pit diameters is observed. UV exposure can also increase noise, which in the extreme can distort the shapes of particle pits. Analyzing the effects of different wavelengths in the UV spectrum we have determined that light of the wavelength 255 nm increases etch rates and pit diameters while causing less background noise than longer UV wavelengths. Preliminary research indicates that heating CR-39 to elevated temperatures (~80 °C) during UV exposure also improves the signal-to-noise ratio for this process. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  18. Etching of nanostructures on soda-lime glass.

    PubMed

    Wang, Elmer; Zhao, Yang

    2014-07-01

    Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths. PMID:24978727

  19. Laser labeling and its effect on the storage quality of citrus fruits

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Etching the required information on the skins of fruits and vegetables is an alternative way to label produce. A low energy CO2 laser beam etches the outermost layer of the epidermis revealing the contrasting underneath layer while forming alphanumerical characters. These etched areas represent brea...

  20. Effects of laser labeling on the quality of citrus fruit during storage

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Etching the required information on fruit and vegetables is an alternative means to label produce. Low energy CO2 laser etches the surface showing the contrasting underlying layer. These etched surfaces can promote water loss and potentially allow for pathogen entry. Studies were conducted to measur...

  1. Effect of Rare Gas Dilution of SF6 Plasma on RIE Etching Characteristics of SiC

    NASA Astrophysics Data System (ADS)

    Ganguly, J. D.; Bletzinger, B. N.

    1999-10-01

    The etch rates and the anisotropy of etched features of hexagonal 6H-SiC have been measured in a capacitively coupled rf discharge using SF_6+Ar and SF_6+He diluted gas mixtures. These measurements provide evidence for the generic nature of utilizing gas mixtures to modify electrical characteristics of rf discharges to optimize power coupling efficiency, although etch rates and surface morphology do not necessarily scale only with the plasma power coupling efficiency. In spite of the measured lower power deposition with He dilution compared to Ar, He diluted SF6 plasma resulted in 1.5 greater etch rates (up to 300 nm/min) with 50% He dilution, with better anisotropy and surface texture than comparable SF_6+Ar mixtures. Superior SiC etch performance was obtained with He dilution, compared to Ar, over the entire 10% up to 90% range despite lower power coupling efficiency and the notion that Ar^+ ions are expected to enhance ion assisted etch mechanism. The differences in dc self bias and volume plasma E/n leading to the conversion of SF_5^+ ions to SF_3^+ along with Penning ionization of SF6 by metastable He atoms may be responsible for the observed superior etch characteristics.

  2. Microfabrication techniques for semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tamanuki, Takemasa; Tadokoro, T.; Morito, Ken; Koyama, Fumio; Iga, Kenichi

    1991-03-01

    Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched

  3. Plasma etching of chromium films in the fabrication of photomasks

    NASA Astrophysics Data System (ADS)

    Coleman, Thomas P.; Buck, Peter D.

    1995-12-01

    To meet the advanced CD uniformity and resolution requirements of state-of-the-art maskmaking, dry chrome etch processing may be required. Dry etching is a more anisotropic process, significantly reducing etch undercut. The absence of undercutting allows the lithographer to image the resist at the iso-focal point, eliminating the need to underexpose to maintain CDs. Also, dry etch parameters can be precisely controlled via a microprocessor- controlled etch system with a highly accurate parameter-metering system that ensures greater process control. Using design-of-experiment methodologies, a chrome plasma etch process (using OCG-895i) was developed. This work proves the feasibility of plasma etching chromium patterns on photomasks. The results show an etch that has excellent uniformity, is anisotropic, and has excellent edge quality. Also, resist selectivity is high for the etching of thin chrome films. SEM results show a significant reduction in the bias needed to achieve nominal CDs. As with many dry etch processes, loading and microloading effects (i.e., localized pattern density effect on etch rates) are a concern. Initial investigations of loading and microloading effects were conducted. Results suggest that due to the high anisotropy of the etch, microloading is not an issue. However, plate loading (or the amount of chrome removed) increases etch times and can result in radial etch patterns. Loading effects must be minimized or eliminated to optimize etch uniformity.

  4. Antifungal activity of Ag:hydroxyapatite thin films synthesized by pulsed laser deposition on Ti and Ti modified by TiO2 nanotubes substrates

    NASA Astrophysics Data System (ADS)

    Eraković, S.; Janković, A.; Ristoscu, C.; Duta, L.; Serban, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Socol, M.; Iordache, O.; Dumitrescu, I.; Luculescu, C. R.; Janaćković, Dj.; Miškovic-Stanković, V.

    2014-02-01

    Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FTIR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity.

  5. Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loading

    NASA Technical Reports Server (NTRS)

    Lerner, N. R.; Wydeven, T.

    1989-01-01

    Reactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.

  6. Electronic and crystalline structure of Si/SiO 2 interface modified by ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Cháb, V.; Lukeš, I.; Ondřejček, M.; Jiříček, P.

    The native oxide layers on Si(100) surface were irradiated under UHV conditions by an ArF excimer laser pulses with energy density varied between melting and evaporating thresholds. The resulting changes were studied by LEED, AES and UPS. The increase of the energy density up to evaporation threshold results in the recrystallisation of native oxide layer. The pulses with energy densities just above the evaporation threshold ablate the top layer leaving an ordered and atomicaly clean surface. The observed (1x1) surface reconstruction is probably stabilised by strains introduced during rapid melting and quenching of the topmost layers. The surface electronic structure is dominated by random satisfaction of dangling bonds swearing a well defined surface states observed on (2x1)Si(100) surface.

  7. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  8. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  9. Dry etched SiO2 Mask for HgCdTe Etching Process

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  10. Process capability of etched multilayer EUV mask

    NASA Astrophysics Data System (ADS)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  11. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  12. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  13. Patterning enhancement techniques by reactive ion etch

    NASA Astrophysics Data System (ADS)

    Honda, Masanobu; Yatsuda, Koichi

    2012-03-01

    The root causes of issues in state-of-the-arts resist mask are low plasma tolerance in etch and resolution limit in lithography. This paper introduces patterning enhancement techniques (PETs) by reactive ion etch (RIE) that solve the above root causes. Plasma tolerance of resist is determined by the chemical structure of resin. We investigated a hybrid direct current (DC) / radio frequency (RF) RIE to enhance the plasma tolerance with several gas chemistries. The DC/RF hybrid RIE is a capacitive coupled plasma etcher with a superimposed DC voltage, which generates a ballistic electron beam. We clarified the mechanism of resist modification, which resulted in higher plasma tolerance[1]. By applying an appropriate gas to DC superimposed (DCS) plasma, etch resistance and line width roughness (LWR) of resist were improved. On the other hand, RIE can patch resist mask. RIE does not only etch but also deposits polymer onto the sidewall with sedimentary type gases. In order to put the deposition technique by RIE in practical use, it is very important to select an appropriate gas chemistry, which can shrink CD and etch BARC. By applying this new technique, we successfully fabricated a 35-nm hole pattern with a minimum CD variation.

  14. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  15. Low radio frequency biased electron cyclotron resonance plasma etching

    NASA Astrophysics Data System (ADS)

    Samukawa, Seiji; Toyosato, Tomohiko; Wani, Etsuo

    1991-03-01

    A radio frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology has been developed to realize an efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching. In this technology, the substrate is located at the ECR position (875 G position) and the etching is carried out with a 400 kHz rf bias power. This Al-Si-Cu etching technology achieves a high etching rate (more than 5000 A/min), excellent etching uniformity (within ±5%), highly anisotropic etching, and Cu residue-free etching in only Cl2 gas plasma. These etching characteristics are accomplished by the combination of the dense and uniform ECR plasma generation at the ECR position with the efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

  16. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    NASA Astrophysics Data System (ADS)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  17. High-Reliability Copper Interconnects through Dry Etching Process

    NASA Astrophysics Data System (ADS)

    Igarashi, Yasushi; Yamanobe, Tomomi; Ito, Toshio

    1995-02-01

    A modified high-temperature dry etching technique, which enables anisotropic patterning with a high etching selectivity and self-aligned passivation of a sidewall of an interconnect simultaneously, has been developed for fabrication of sub-quarter-micron Cu interconnects. Resistivities of the resulting Cu interconnects are in the range of 1.7 to 2.2 µΩ· cm for the linewidth of 0.2-3.0 µ m. As a result of electromigration (EM) tests, it has been observed that median time to failure (MTF) of the Cu interconnects depends on their linewidth. This behavior is considered to be caused by their grain structure, such as a bamboo-type structure for linewidths narrower than 0.3 µ m. In comparison with a MTF of a conventional Al-1%Si line, these Cu interconnects have at least 100 times longer lifetime. Activation energy for EM damage of the 0.7-µ m-wide line is 0.88 eV.

  18. SERS detection of protein biochip fabricated by etching polystyrene template

    NASA Astrophysics Data System (ADS)

    Li, Zhishi; Ruan, Weidong; Song, Wei; Xue, Xiangxin; Mao, Zhu; Ji, Wei; Zhao, Bing

    2011-11-01

    In this study, a nanoscale protein chip is prepared by using an etched polystyrene (PS) template. This protein chip can be directly used for immunoassay, with the help of Surface Enhanced Raman Scattering (SERS) spectra. Some glass slides submerged in aldehyde is initially prepared, modified with antibodies, human immunoglobulin G (IgG). Then PS arrays are self-assembled on these slides with the Langmuir-Blodgett method. The PS template pattern is transferred to the human IgG substrate using an etching process—slides are exposed to O 2 plasma for 90 s. The PS nanoparticles are then washed away using phosphate buffered saline solution. Next, the slides are dipped into bovine serum albumin solution to ensure that the anti IgG would bond only to the human IgG. At this moment, a patterned protein chip is obtained. When used for protein detection, the protein chip could be immersed into labeled specificity antigen solution. Here we chose fluorescein isothiocyanate anti-human IgG. After washing, only bonded antigens remain. Fluorescence microscopy and SERS is used to characterize the samples. The SERS spectra intensity shows liner correlation with the concentration of anti-human IgG. All the experiments are conducted in a phosphate buffered saline solution at 37 °C for 2 h.

  19. Total analysis systems with Thermochromic Etching Discs technology.

    PubMed

    Avella-Oliver, Miquel; Morais, Sergi; Carrascosa, Javier; Puchades, Rosa; Maquieira, Ángel

    2014-12-16

    A new analytical system based on Thermochromic Etching Discs (TED) technology is presented. TED comprises a number of attractive features such as track independency, selective irradiation, a high power laser, and the capability to create useful assay platforms. The analytical versatility of this tool opens up a wide range of possibilities to design new compact disc-based total analysis systems applicable in chemistry and life sciences. In this paper, TED analytical implementation is described and discussed, and their analytical potential is supported by several applications. Microarray immunoassay, immunofiltration assay, solution measurement, and cell culture approaches are herein addressed in order to demonstrate the practical capacity of this system. The analytical usefulness of TED technology is herein demonstrated, describing how to exploit this tool for developing truly integrated analytical systems that provide solutions within the point of care framework. PMID:25310278

  20. A model for pore growth in anodically etched gallium phosphide

    NASA Astrophysics Data System (ADS)

    Ricci, P. C.; Salis, M.; Anedda, A.

    2005-06-01

    The electrochemical etching process of porous gallium phosphide was studied by means of the characteristic current-potential (I-V) curves. Measurements were performed in H2SO4 0.5-M aqueous solution both in the dark and by illuminating the samples with the 351-nm line of an argon laser. Raman spectroscopy was applied to investigate the surface morphology of the samples prepared under different anodizing conditions within the potentiostatic regime. Based on a few reasonable assumptions, a simple model of pore growth is proposed. The enhancing effect in current intensity due to the branching of pores and the opposite effect due to a concomitant decrease in the effective cross area available for carrier transport are accounted for to explain the main features of the recorded I -V curves.

  1. Effects of etching time on alpha tracks in Solid state Nuclear Track Detectors

    NASA Astrophysics Data System (ADS)

    Gillmore, Gavin; Wertheim, David; Crust, Simon

    2013-04-01

    Inhalation of radon gas is thought to be the cause of about 1100 lung cancer related deaths each year in the UK (1). Radon concentrations can be monitored using Solid State Nuclear Track Detectors (SSNTDs) as the natural decay of radon results in alpha particles which form tracks in the detectors and these tracks can be etched in order to enable microscopic analysis. We have previously shown that confocal microscopy can be used for 3D visualisation of etched SSNTDs (2, 3). The aim of the study was to examine the effect of etching time on the appearance of alpha tracks in SSNTDs. Six SSNTDs were placed in a chamber with a luminous dial watch for a fixed period. The detectors were etched for between 30 minutes and 4.5 hours using 6M NaOH at a temperature of 90oC. A 'LEXT' OLS4000 confocal laser scanning microscope (Olympus Corporation, Japan) was used to acquire 2D and 3D image datasets of CR-39 plastic SSNTDs. Confocal microscope 3D images were acquired using a x50 or x100 objective lens. Data were saved as images and also spreadsheet files with height measurements. Software was written using MATLAB (The MathWorks Inc., USA) to analyse the height data. Comparing the 30 minute and 4 hour etching time detectors, we observed that there were marked differences in track area; the lower the etching time the smaller the track area. The degree to which etching may prevent visualising adjacent tracks also requires further study as it is possible that etching could result in some tracks being subsumed in other tracks. On the other hand if there is too little etching, track sizes would be reduced and hence could be more difficult to image; thus there is a balance required to obtain suitable measurement accuracy. (1) Gray A, Read S, McGale P and Darby S. Lung cancer deaths from indoor radon and the cost effectiveness and potential of policies to reduce them. BMJ 2009; 338: a3110. (2) Wertheim D, Gillmore G, Brown L, and Petford N. A new method of imaging particle tracks in

  2. Excimer laser photoresist stripping

    NASA Astrophysics Data System (ADS)

    Genut, Menachem; Tehar-Zahav, Ofer; Iskevitch, Eli; Livshits, Boris

    1996-06-01

    A new method for stripping the most challenging photoresists on deep sub-micron technology semiconductor wafers has been developed. The method uses a combination of UV excimer laser ablation and reactive chemistry to strip the photoresist in a single dry process, eliminating the wet acids or solvents often used following ashing of high dose implantation (HDI) and reactive ion etching (RIE). The stripping process combines new removal mechanisms: chemical assisted UV excimer laser ablation/etching, laser induced chemical etching of side walls and residues, and enhanced combustion. During the laser pulses photolysis of the process gas occurs, UV laser radiation breaks the photoresist polymer chain bonds, and the photoresist (including foreign materials imbedded in it) is ablated. The combustion is ignited by the ablative impact of laser radiation and enhanced by the radicals formed during photo-thermal decomposition of the process gases. Following this process, the volatilized products and gases are evacuated. The optimum laser stripping conditions were developed to provide a wide process window for the most challenging stripping conditions, such as after HDI and RIE (metal, polysilicon), without causing damage to the wafer devices. A photoresist stripping system based on the described technology was designed and built. The system has been designated as the L-StripperTM and provides stripping time of 0.15 s/(micrometer cm2).

  3. End-Point Detection With Laser Interferometry

    NASA Astrophysics Data System (ADS)

    Busta, Heinz H.

    1981-04-01

    A laser interferometric method was developed to detect end-of-etching of materials such as doped and undoped polysilicon, Si3N4, Si02 and metals used during different stages of IC and thin film device processing. For metal etching, a detector trace of constant magnitude is obtained until the underlying layers are exposed. At this point, a step change in re-flectivity occurs, signaling the end-point. For the other above mentioned films, a sinu-soidal waveform is obtained which changes its frequency once the film of interest is etched and the underlying layers become exposed. The method is applicable to all of the dry etch-ing processes and will be illustrated in some detail for polysilicon and silicon nitride etching applications using a barrel-type plasma reactor.

  4. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  5. Solderability enhancement of copper through chemical etching

    SciTech Connect

    Stevenson, J.O.; Guilinger, T.R.; Hosking, F.M.; Yost, F.G.; Sorensen, N.R.

    1995-05-01

    Sandia National Laboratories has established a Cooperative Research and Development Agreement with consortium members of the National Center for Manufacturing Sciences (NCMS) to develop fundamental generic technology in the area of printed wiring board materials and surface finishes. Improved solderability of copper substrates is an important component of the Sandia-NCMS program. The authors are investigating the effects of surface roughness on the wettability and solderability behavior of several different types of copper board finishes. In this paper, the authors present roughness and solderability characterizations for a variety of chemically-etched copper substrates. Initial testing on six chemical etches demonstrate that surface roughness can be greatly enhanced through chemical etching. Noticeable improvements in solder wettability were observed to accompany increases in roughness. A number of different algorithms and measures of roughness were used to gain insight into surface morphologies that lead to improved solderability.

  6. Exploiting transplastomically modified Rubisco to rapidly measure natural diversity in its carbon isotope discrimination using tuneable diode laser spectroscopy

    PubMed Central

    von Caemmerer, Susanne; Tazoe, Youshi; Evans, John R.; Whitney, Spencer M.

    2014-01-01

    Carbon isotope discrimination (Δ) during C3 photosynthesis is dominated by the fractionation occurring during CO2-fixation by the enzyme Rubisco. While knowing the fractionation by enzymes is pivotal to fully understanding plant carbon metabolism, little is known about variation in the discrimination factor of Rubisco (b) as it is difficult to measure using existing in vitro methodologies. Tuneable diode laser absorption spectroscopy has improved the ability to make rapid measurements of Δ concurrently with photosynthetic gas exchange. This study used this technique to estimate b in vivo in five tobacco (Nicotiana tabacum L. cv Petit Havana [N,N]) genotypes expressing alternative Rubisco isoforms. For transplastomic tobacco producing Rhodospirillum rubrum Rubisco b was 23.8±0.7‰, while Rubisco containing the large subunit Leu-335-Val mutation had a b-value of 13.9±0.7‰. These values were significantly less than that for Rubisco from wild-type tobacco (b=29‰), a C3 species. Transplastomic tobacco producing chimeric Rubisco comprising tobacco Rubisco small subunits and the catalytic large subunits from either the C4 species Flaveria bidentis or the C3-C4 species Flaveria floridana had b-values of 27.8±0.8 and 28.6±0.6‰, respectively. These values were not significantly different from tobacco Rubisco. PMID:24687980

  7. Modified multiscale sample entropy computation of laser speckle contrast images and comparison with the original multiscale entropy algorithm.

    PubMed

    Humeau-Heurtier, Anne; Mahé, Guillaume; Abraham, Pierre

    2015-12-01

    Laser speckle contrast imaging (LSCI) enables a noninvasive monitoring of microvascular perfusion. Some studies have proposed to extract information from LSCI data through their multiscale entropy (MSE). However, for reaching a large range of scales, the original MSE algorithm may require long recordings for reliability. Recently, a novel approach to compute MSE with shorter data sets has been proposed: the short-time MSE (sMSE). Our goal is to apply, for the first time, the sMSE algorithm in LSCI data and to compare results with those given by the original MSE. Moreover, we apply the original MSE algorithm on data of different lengths and compare results with those given by longer recordings. For this purpose, synthetic signals and 192 LSCI regions of interest (ROIs) of different sizes are processed. Our results show that the sMSE algorithm is valid to compute the MSE of LSCI data. Moreover, with time series shorter than those initially proposed, the sMSE and original MSE algorithms give results with no statistical difference from those of the original MSE algorithm with longer data sets. The minimal acceptable length depends on the ROI size. Comparisons of MSE from healthy and pathological subjects can be performed with shorter data sets than those proposed until now. PMID:26220209

  8. Modified multiscale sample entropy computation of laser speckle contrast images and comparison with the original multiscale entropy algorithm

    NASA Astrophysics Data System (ADS)

    Humeau-Heurtier, Anne; Mahé, Guillaume; Abraham, Pierre

    2015-12-01

    Laser speckle contrast imaging (LSCI) enables a noninvasive monitoring of microvascular perfusion. Some studies have proposed to extract information from LSCI data through their multiscale entropy (MSE). However, for reaching a large range of scales, the original MSE algorithm may require long recordings for reliability. Recently, a novel approach to compute MSE with shorter data sets has been proposed: the short-time MSE (sMSE). Our goal is to apply, for the first time, the sMSE algorithm in LSCI data and to compare results with those given by the original MSE. Moreover, we apply the original MSE algorithm on data of different lengths and compare results with those given by longer recordings. For this purpose, synthetic signals and 192 LSCI regions of interest (ROIs) of different sizes are processed. Our results show that the sMSE algorithm is valid to compute the MSE of LSCI data. Moreover, with time series shorter than those initially proposed, the sMSE and original MSE algorithms give results with no statistical difference from those of the original MSE algorithm with longer data sets. The minimal acceptable length depends on the ROI size. Comparisons of MSE from healthy and pathological subjects can be performed with shorter data sets than those proposed until now.

  9. Modified laser-annealing process for improving the quality of electrical P-N junctions and devices

    DOEpatents

    Wood, Richard F.; Young, Rosa T.

    1984-01-01

    The invention is a process for producing improved electrical-junction devices. The invention is applicable, for example, to a process in which a light-sensitive electrical-junction device is produced by (1) providing a body of crystalline semiconductor material having a doped surface layer, (2) irradiating the layer with at least one laser pulse to effect melting of the layer, (3) permitting recrystallization of the melted layer, and (4) providing the resulting body with electrical contacts. In accordance with the invention, the fill-factor and open-circuit-voltage parameters of the device are increased by conducting the irradiation with the substrate as a whole at a selected elevated temperature, the temperature being selected to effect a reduction in the rate of the recrystallization but insufficient to effect substantial migration of impurities within the body. In the case of doped silicon substrates, the substrate may be heated to a temperature in the range of from about 200.degree. C. to 500.degree. C.

  10. Modified section method for laser-welding of ill-fitting cp Ti and Ni-Cr alloy one-piece cast implant-supported frameworks.

    PubMed

    Tiossi, R; Falcão-Filho, H; Aguiar Júnior, F A; Rodrigues, R C; Mattos, M da G; Ribeiro, R F

    2010-05-01

    This study aimed to verify the effect of modified section method and laser-welding on the accuracy of fit of ill-fitting commercially pure titanium (cp Ti) and Ni-Cr alloy one-piece cast frameworks. Two sets of similar implant-supported frameworks were constructed. Both groups of six 3-unit implant-supported fixed partial dentures were cast as one-piece [I: Ni-Cr (control) and II: cp Ti] and evaluated for passive fitting in an optical microscope with both screws tightened and with only one screw tightened. All frameworks were then sectioned in the diagonal axis at the pontic region (III: Ni-Cr and IV: cp Ti). Sectioned frameworks were positioned in the matrix (10-Ncm torque) and laser-welded. Passive fitting was evaluated for the second time. Data were submitted to anova and Tukey-Kramer honestly significant difference tests (P < 0.05). With both screws tightened, one-piece cp Ti group II showed significantly higher misfit values (27.57 +/- 5.06 microm) than other groups (I: 11.19 +/- 2.54 microm, III: 12.88 +/- 2.93 microm, IV: 13.77 +/- 1.51 microm) (P < 0.05). In the single-screw-tightened test, with readings on the opposite side to the tightened side, Ni-Cr cast as one-piece (I: 58.66 +/- 14.30 microm) was significantly different from cp Ti group after diagonal section (IV: 27.51 +/- 8.28 microm) (P < 0.05). On the tightened side, no significant differences were found between groups (P > 0.05). Results showed that diagonally sectioning ill-fitting cp Ti frameworks lowers misfit levels of prosthetic implant-supported frameworks and also improves passivity levels of the same frameworks when compared to one-piece cast structures. PMID:20149062

  11. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    SciTech Connect

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  12. Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium

    NASA Astrophysics Data System (ADS)

    Deng, Changmeng; Geng, Yongyou; Wu, Yiqun

    2011-09-01

    In this paper, we study Ge2Sb2Te5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge2Sb2Te5 films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.

  13. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  14. Etching and structural changes in nitrogen plasma immersion ion implanted polystyrene films

    NASA Astrophysics Data System (ADS)

    Gan, B. K.; Bilek, M. M. M.; Kondyurin, A.; Mizuno, K.; McKenzie, D. R.

    2006-06-01

    Plasma immersion ion implantation (PIII), with nitrogen ions of energy 20 keV in the fluence range of 5 × 1014-2 × 1016 ions cm-2, is used to modify 100 nm thin films of polystyrene on silicon wafer substrates. Ellipsometry is used to study changes in thickness with etching and changes in optical constants. Two distinctly different etch rates are observed as the polymer structure is modified. FTIR spectroscopy data reveals the structural changes, including changes in aromatic and aliphatic groups and oxidation and carbonisation processes, occurring in the polystyrene film as a function of the ion fluence. The transformation to a dense amorphous carbon-like material was observed to progress through an intermediate structural form containing a high concentration of Cdbnd C and Cdbnd O bonds.

  15. Analyses of functional polymer-modified nanoparticles for protein sensing by surface-assisted laser desorption/ionization mass spectrometry coupled with HgTe nanomatrices.

    PubMed

    Chang, Hsiang-Yu; Huang, Ming-Feng; Hsu, Chia-Lun; Huang, Chih-Ching; Chang, Huan-Tsung

    2015-06-01

    In this study, we employed HgTe nanostructure-based matrices (nanomartrices; NMs) for surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) for the analyses of polyethylene glycol (PEG) derivatives as well as thiol-PEG-modified gold nanoparticles (PEG-Au NPs). Relative to common organic matrices, the use of HgTe NMs as the matrix for SALDI-MS resulted in more highly efficient analyses of PEG derivatives, in terms of sensitivity and reproducibility. The symmetric MS profiles of PEG (Mw: ca. 8000 Da) obtained through HgTe NMs/SALDI-MS analysis revealed the absence of polymer degradation during this process. Under optimal conditions, the HgTe NMs/SALDI-MS system enabled the detection of PEG sample as low as 100 pg and with molecular weights of up to approximately 42,000 Da. We also used this approach for the analyses of PEG-Au NPs in which various functional groups (carboxymethyl, amine, biotin) were present at the PEG termini, revealing that the combination of SALDI-MS and HgTe NMs have great potential for use in the characterization of modified polymer-ligands on nanomaterials. We also demonstrated the PEG-Au NPs can be coupled with HgTe NMs/SALDI-MS for characterization of biorecognition events. After avidin, the target protein, had been selectively captured by the biotin-PEG-Au NPs, we found that the desorption/ionization efficiency of biotin-PEG from the Au NP surface was suppressed; accordingly, this novel SALDI-MS approach allows rapid detection of avidin with high specificity and sensitivity. Au NP surfaces functionalized with other functional-PEG ligands might also allow amplification of signals from other biological interactions. PMID:25896538

  16. Biomimetic hydrophobic surface fabricated by chemical etching method from hierarchically structured magnesium alloy substrate

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Yin, Xiaoming; Zhang, Jijia; Wang, Yaming; Han, Zhiwu; Ren, Luquan

    2013-09-01

    As one of the lightest metal materials, magnesium alloy plays an important role in industry such as automobile, airplane and electronic product. However, magnesium alloy is hindered due to its high chemical activity and easily corroded. Here, inspired by typical plant surfaces such as lotus leaves and petals of red rose with super-hydrophobic character, the new hydrophobic surface is fabricated on magnesium alloy to improve anti-corrosion by two-step methodology. The procedure is that the samples are processed by laser first and then immersed and etched in the aqueous AgNO3 solution concentrations of 0.1 mol/L, 0.3 mol/L and 0.5 mol/L for different times of 15 s, 40 s and 60 s, respectively, finally modified by DTS (CH3(CH2)11Si(OCH3)3). The microstructure, chemical composition, wettability and anti-corrosion are characterized by means of SEM, XPS, water contact angle measurement and electrochemical method. The hydrophobic surfaces with microscale crater-like and nanoscale flower-like binary structure are obtained. The low-energy material is contained in surface after DTS treatment. The contact angles could reach up to 138.4 ± 2°, which hydrophobic property is both related to the micro-nano binary structure and chemical composition. The results of electrochemical measurements show that anti-corrosion property of magnesium alloy is improved. Furthermore, our research is expected to create some ideas from natural enlightenment to improve anti-corrosion property of magnesium alloy while this method can be easily extended to other metal materials.

  17. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    PubMed

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. PMID:26918658

  18. Dynamic observation of electrochemical etching in silicon

    SciTech Connect

    Ross, F.M.; Searson, P.C.

    1995-03-01

    The authors have designed and constructed a TEM specimen holder in order to observe the process of pore formation in silicon. The holder incorporates electrical feedthroughs and a sealed reservoir for the electrolyte and accepts lithographically patterned silicon specimens. The authors describe the system and present preliminary, ex situ observations of the etching process.

  19. Dry etching of III-V nitrides

    SciTech Connect

    Pearton, S.J.; Shul, R.J.; McLane, G.F.; Constantine, C.

    1995-12-01

    The chemical inertness and high bond strengths of the III-V nitrides lead to slower plasma etching rates than for more conventional III-V semiconductors under the same conditions. High ion density conditions (>3{times}l0{sup 9}cm{sup {minus}3}) such as those obtained in ECR or magnetron reactors produce etch rates up to an order of magnitude higher than for RIE, where the ion densities are in the 10{sup 9}cm{sup {minus}3} range. We have developed smooth anisotropic dry etches for GaN, InN, AlN and their alloys based on Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar, BCl{sub 3}/Ar, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, HBr/H{sub 2} and HI/H{sub 2} plasma chemistries achieving etch rates up to {approximately}4,000{angstrom}/min at moderate dc bias voltages ({le}-150V). Ion-induced damage in the nitrides appears to be less apparent than in other III-V`s. One of the key remaining issues is the achievement of high selectivities for removal of one layer from another.

  20. Technique for etching monolayer and multilayer materials

    DOEpatents

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  1. Etch Profile Simulation Using Level Set Methods

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  2. Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Shim, Jae-Hyun; Lee, Sanghun

    2016-08-01

    Surface-modified graphite for application as an anode material in lithium ion batteries was obtained by etching with KOH under mild conditions without high-temperature annealing. The surface of the etched graphite is covered with many nano-sized pores that act as entrances for lithium ions during the charging process. As compared with pristine graphite and other references such as pitch-coated or etched graphite samples with annealing, our non-annealed etched graphite exhibits excellent electrochemical properties, particularly at fast charging rates of over 2.5 C. While avoidance of the trade-off between increase of irreversible capacity and good rate capability has previously been a main concern in highly porous carbonaceous materials, we show that the slightly larger surface area created by the etching does not induce a significant increase of irreversible capacity. This study shows that it is important to limit the size of pores to the nanometer scale for excellent battery performance, which is possible by etching under relatively mild conditions.

  3. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    NASA Astrophysics Data System (ADS)

    Liu, Wenyong; Sun, Linyu; Luo, Yuting; Wu, Ruomei; Jiang, Haiyun; Chen, Yi; Zeng, Guangsheng; Liu, Yuejun

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157̊. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159̊ by coating PP-g-MAH, while the CA was only 141̊ by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro-nano concave-convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro-nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  4. Multilayer Badges Indicate Depths Of Ion Sputter Etches

    NASA Technical Reports Server (NTRS)

    Beattie, J. R.; Matossian, J. N.; Garvin, H. L.

    1994-01-01

    Multilayer badges devised to provide rapid, in-place indications of ion sputter etch rates. Badges conceived for use in estimating ion erosion of molybdenum electrodes used in inert-gas ion thrustors. Concept adapted to measure ion erosion in industrial sputter etching processes used for manufacturing of magnetic, electronic, and optical devices. Badge etched when bombarded by energetic ions. Badge layers exposed using mask. Contrast between layers facilitates counting of layers to determine etch depth.

  5. Anodic etching of p-type cubic silicon carbide

    NASA Technical Reports Server (NTRS)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  6. High index contrast polysiloxane waveguides fabricated by dry etching

    SciTech Connect

    Madden, S. J.; Zhang, M. Y.; Choi, D.-Y.; Luther-Davies, B.; Charters, R.

    2009-05-15

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF{sub 3}/O{sub 2} etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  7. Optimization of Track Etched Makrofol Etching Conditions for Short-term Exposure Duration

    NASA Astrophysics Data System (ADS)

    Moreno, V.; Font, Ll.

    Exposure time of nuclear track detectors at humid environments is normally limited to a few weeks because filter used to avoid humidity is not completely waterproof and, after several months, some parts of detector start to degrade. In other really extreme measurement conditions, like high aerosol content, high or low temperatures, etc., the exposure time also requires a reduction. Then detector detection limit becomes a problem, unless radon concentrations were high. In those cases where radon levels are not high enough a better detection efficiency is required. In our laboratory we use passive detectors based on the track etched Makrofol DE foil covered with aluminized Mylar and they are analyzed by means of an electrochemical etching. Our standard etching conditions allow analyzing detectors generally exposed for periods between three and six months. We have optimized our etching conditions to reduce the exposure time down to a month for common radon concentration values.

  8. Controlling the relative rates of adlayer formation and removal during etching in inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Fuller, Nicholas Colvin Masi

    Laser desorption (LD) of the adlayer coupled with laser induced fluorescence (LIF) and plasma induced emission (PIE) of desorbed adsorbates is used to investigate the relative rates of chlorination and sputtering during the etching of Si in inductively coupled Cl2-Ar plasmas. Such an analysis is a two-fold process: surface analysis and plasma characterization. Surface analysis of Si etching using LD-LIF and LD-PIE techniques combined with etch rate measurements have revealed that the coverage of SiCl2 and etch rate increases and coverage of Si decreases abruptly for a chlorine fraction of 75% and ion energy of 80 eV. The precise Cl2 fraction for which these abrupt changes occur increases with an increase in ion energy. These changes may be caused by local chemisorption-induced reconstruction of Si <100>. Furthermore, the chlorination and sputtering rates are increased by ˜ an order of magnitude as the plasma is changed from Ar-dominant to Cl-dominant. Characterization of the plasma included determination of the dominant ion in Cl2 plasmas using LIF and a Langmuir probe and measurement of the absolute densities of Cl2, Cl, Cl+, and At + in Cl2-Ar discharges using optical emission actinometry. These studies reveal that Cl+ is the dominant positive ion in the H-mode and the dissociation of Cl2 to Cl increases with an increase in Ar fraction due to an increase in electron temperature. Furthermore, for powers exceeding 600 W, the neutral to ion flux ratio is strongly dependent on Cl2 fraction and is attributed mostly to the decrease in Cl density. Such dependence of the flux ratio on Cl2 fraction is significant in controlling chlorination and sputtering rates not only for Si etching, but for etching other key technological materials. ICP O2 discharges were also studied for low-kappa polymeric etch applications. These studies reveal that the electron temperature is weakly dependent on rf power and O2 dissociation is low (˜2%) at the maximum rf power density of 5.7 Wcm

  9. CR-39 track etching and blow-up method

    DOEpatents

    Hankins, Dale E.

    1987-01-01

    This invention is a method of etching tracks in CR-39 foil to obtain uniformly sized tracks. The invention comprises a step of electrochemically etching the foil at a low frequency and a "blow-up" step of electrochemically etching the foil at a high frequency.

  10. New phase formation in titanium aluminide during chemical etching

    SciTech Connect

    Takasaki, Akito; Ojima, Kozo; Taneda, Youji . Dept. of Mathematics and Physics)

    1994-05-01

    A chemical etching technique is widely used for metallographic observation. Because this technique is based on a local corrosion phenomenon on a sample, the etching mechanism, particularly for two-phase alloys, can be understood by electrochemical consideration. This paper describes formation of a new phase in a Ti-45Al (at.%) titanium aluminide during chemical etching, and the experimental results are discussed electrochemically.

  11. Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

    SciTech Connect

    Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; Lu, Ping; Koleske, Daniel D.; Wang, George T.; Polsky, Ronen; Tsao, Jeffrey Y.

    2014-10-22

    We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale, and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.

  12. Photoelectrochemical etching of epitaxial InGaN thin films: Self-limited kinetics and nanostructuring

    DOE PAGESBeta

    Xiao, Xiaoyin; Fischer, Arthur J.; Coltrin, Michael E.; Lu, Ping; Koleske, Daniel D.; Wang, George T.; Polsky, Ronen; Tsao, Jeffrey Y.

    2014-10-22

    We report here the characteristics of photoelectrochemical (PEC) etching of epitaxial InGaN semiconductor thin films using narrowband lasers with linewidth less than ~1 nm. In the initial stages of PEC etching, when the thin film is flat, characteristic voltammogram shapes are observed. At low photo-excitation rates, voltammograms are S-shaped, indicating the onset of a voltage-independent rate-limiting process associated with electron-hole-pair creation and/or annihilation. At high photo-excitation rates, voltammograms are superlinear in shape, indicating, for the voltage ranges studied here, a voltage-dependent rate-limiting process associated with surface electrochemical oxidation. As PEC etching proceeds, the thin film becomes rough at the nanoscale,more » and ultimately evolves into an ensemble of nanoparticles. As a result, this change in InGaN film volume and morphology leads to a characteristic dependence of PEC etch rate on time: an incubation time, followed by a rise, then a peak, then a slow decay.« less

  13. Etched profile control in anisotropic etching of silicon by TMAH+Triton

    NASA Astrophysics Data System (ADS)

    Pal, Prem; Gosálvez, M. A.; Sato, K.

    2012-06-01

    The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and nonstirred solutions. Triton X-100, with formula C14H22O(C2H4O)n, where n = 9-10, is used as the surfactant. The stirring results conclude that the adsorption of the surfactant on the etched silicon surfaces is predominantly physical in nature rather than chemical (physisorption versus chemisorption). The proposed model to account for the galvanic interaction between the evolving facets indicates that the underlying chemical etching process can be significantly surpassed by the onset of an electrochemical etching contribution when the relative area of the exposed {1 0 0} surface becomes relatively small in comparison to that of the developed {1 1 1} sidewalls. This study is useful for engineering applications where surfactant-added TMAH is used for the fabrication of silicon MEMS structures that should contain negligible undercutting.

  14. Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon.

    PubMed

    Lianto, Prayudi; Yu, Sihang; Wu, Jiaxin; Thompson, C V; Choi, W K

    2012-12-01

    Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult. A systematic study of the mechanism and catalyst stability of metal assisted chemical etching (MACE) of Si in HF and H(2)O(2) using Au catalysts has been carried out. The effects of the etchants on the stability of Au catalysts were examined in detail. The role of excess electronic holes as a result of MACE was investigated via pit formation as a function of catalyst proximity and H(2)O(2) concentration. We show that a suppression of excess holes can be achieved by either adding NaCl to or increasing the HF concentration of the etching solution. We demonstrate that an electric field can direct most of the excess holes to the back of the Si wafer and thus reduce pit formation at the surface of Si between the Au catalysts. The effect of hydrogen bubbles, generated as a consequence of MACE, on the stability of Au catalysts has also been investigated. We define a regime of etch chemistry and catalyst spacing for which catalyst stability and vertical etching can be achieved. PMID:23099475

  15. Chemical etching method assisted double-pulse LIBS for the analysis of silicon crystals

    NASA Astrophysics Data System (ADS)

    Khalil, A. A. I.

    2015-06-01

    Two Nd:YAG lasers working in pulsed modes are combined in the same direction (collinear arrangement) to focus on silicon (Si) crystals in reduced oxygen atmosphere (0.1 mbar) for double-pulse laser-induced breakdown spectroscopy (DP-LIBS) system. Silicon crystals of (100) and (111) orientations were investigated, and Si samples were measured either without prior treatment ("untreated") or after fabrication of nano-pores ("treated"). Nano-pores are produced by metal coating and by chemical etching. DP-LIBS spectra were compared for different Si samples (untreated, treated, (100) and (111) orientations), for double-pulse (DP) (with 266 nm pulse followed by 1064 nm pulse) excitation and for different delay times (times between the excitation laser pulse and the detection ICCD gate); treatment by chemical etching has been studied as well. The intensity of the atomic line Si I at 288.16 nm was enhanced by a factor of about three by using the DP-LIBS signals as compared to the single-pulse (SP) signal which could increase the sensitivity of the LIBS technique. This study proved that an optimized value of the etching time of Si during etching by chemical processes and short delay times are required. Plasma parameters [the electron temperature ( T e) and the electron number density ( N e)] were calculated from measured SP- and DP-LIBS spectra. The most important result of this study is the much higher DP-LIBS intensity observed on Si (100) as compared to Si (111) for measurements under the same experimental conditions. This study could provide important reference data for the design and optimization of DP-LIBS systems involved in plasma-facing components diagnostics.

  16. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Kyung, Se Jin; Yeom, Geun Young

    2008-10-01

    Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called "pin-to-plate DBD." The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200-800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1-10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C-F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

  17. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    NASA Technical Reports Server (NTRS)

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  18. The research on conformal acid etching process of glass ceramic

    NASA Astrophysics Data System (ADS)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  19. Research on wet etching at MEMS torsion mirror optical switch

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Wang, Jifeng; Luo, Yuan

    2002-10-01

    Etching is a very important technique at MEMS micromachining. There are two kinds of etching processing, the one is wet etching and the other is dry etching. In this paper, wet selective etching with KOH and tetramethyl ammonium hydroxide (TMAH) etchants is researched in order to make a torsion mirror optical switch. The experiments results show that TMAH with superphosphate is more suitable at MEMS torsion mirror optical switch micromachining than KOH, and it also has good compatibility with IC processing. Also our experiments results show some different with other reported research data. More work will be done to improve the yield rate of MEMS optical switch.

  20. Particle contamination characterization in a helicon plasma etching tool

    SciTech Connect

    Selwyn, G.S.

    1996-03-01

    There is much current interest regarding the formation, transport, charging, and behavior of particulate contamination in high density plasma tools, as these tools are generally regarded as the future of plasma processing for the semiconductor industry due to the need to obtain greater anisotropy and faster process rates concurrently with reduced surface damage. Because of the low pressures in which these tools typically operate ({lt}5 mTorr), the likelihood of homogeneous nucleation processes leading to particle contamination problems is low. Similarly, the effect of ion drag is also expected to be greater, possibly leading to reduced particle trapping effects. Yet, few laser light scatter studies have been performed in high density plasma tools. This study is the first {ital in} {ital situ} characterization of particle contamination in a plasma etching tool using a helicon source. It was performed during normal process conditions for poly-Si etching and also under intentionally altered process conditions designed to produce particles. The effect of a bipolar, electrostatic chuck on wafer particle deposition was also investigated. Results showed that under normal process conditions, few particles were deposited onto the wafer; those that were observed were attributed to thermal stress effects resulting in flaking of deposition films, probably on the quartz bell jar of the source. Results also suggest that the electrostatic chuck increased particle deposition when the clamping voltage was applied. No trapping was observed over the wafer or near the source. However, some trapped particles were observed below the wafer platform. These particles showed unusual motion, but probably have minimal effect on wafer contamination. The issues pertaining to particle contamination formation and transport in this high density plasma tool are discussed. {copyright} {ital 1996 American Vacuum Society}

  1. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  2. Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

    PubMed

    Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

    2016-04-10

    HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance. PMID:27139869

  3. Laser-induced surface modification and metallization of polymers

    NASA Astrophysics Data System (ADS)

    Frerichs, Hartmut; Wesner, David A.; Kreutz, Ernst-Wolfgang

    1995-04-01

    Laser-induced surface modification of various polymers is presented as a suitable pretreatment of surfaces in a two-step metallization process. Materials such as polyamide (PA), polypropylene (PP), polystyrene (PS), polycarbonate (PC), acrylbutadienestyrene (ABS), styreneacrylnitril (SAN), polybutadieneterphtalate (PBT), and polyoxymethylen (POM) were treated by excimer laser radiation ((lambda) equals 248 nm) in air. The aim of this study is to investigate different processing regimes of surface modification. Therefore the laser processing variables fluence F, repetition rate v and pulse number N are varied and the absorption coefficient, optical penetration depth, ablation depth and ablation threshold are determined. The surface morphology and surface roughness are studied by optical surface profilometry and secondary electron microscopy (SEM). The influence of laser treatment on chemical composition of modified and ablated surfaces is analyzed by X-ray photoelectron spectroscopy (XPS). Depending on the processing parameters and materials properties different microstructures and values of surface roughness are generated on the micrometer length scale. Pretreatment for the subsequent metallization is performed with laser radiation, wet chemical and plasma etching. The metallization of polymers is investigated for different surface morphologies. The used metallization processes are electroplating and physical vapor deposition (PVD). Adhesion of the deposited films, measured with scratch and tape test methods, is used as a criterion for determining regimes of suitable surface modification for subsequent metallization.

  4. Photonic devices based on preferential etching.

    PubMed

    Bellini, Bob; Larchanché, Jean-François; Vilcot, Jean-Pierre; Decoster, Didier; Beccherelli, Romeo; d'Alessandro, Antonio

    2005-11-20

    We introduce a design concept of optical waveguides characterized by a practical and reproducible process based on preferential etching of crystalline silicon substrates. Low-loss waveguides, spot-size converters, and power dividers have been obtained with polymers. We have also aligned liquid crystals in the waveguides and demonstrated guided propagation. Therefore this technology is a suitable platform for soft-matter photonics and heterogeneous integration. PMID:16318190

  5. Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

    NASA Astrophysics Data System (ADS)

    Constantine, C.; Barratt, C.; Pearton, S. J.; Ren, F.; Lothian, J. R.

    1992-12-01

    Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (-80 to -150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ˜150 °C. Rates of 2500 Å min-1 are obtained at a pressure of 0.5 mTorr and ˜80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.

  6. Application of the Modified Clavien Classification System to 402 Cases of Holmium Laser Enucleation of the Prostate for Benign Prostatic Hyperplasia

    PubMed Central

    Choi, Jong In; Moon, Kyung Young; Yoon, Jong Hyun; Na, Woong

    2014-01-01

    Purpose We attempted to evaluate the perioperative complications of holmium laser enucleation of the prostate (HoLEP) for benign prostatic hyperplasia by using the modified Clavien classification system (MCCS). Materials and Methods Targeting 402 patients who underwent HoLEP for benign prostatic hyperplasia performed by a single surgeon between July 2008 and January 2011, we investigated complications that occurred during and within 1 month after surgery and classified them into grade I to grade V on the basis of the MCCS. If two or more complications occurred in one patient, each complication was graded and counted. Results The mean age, prostate volume, operation time, hospital stay, and average follow-up period of 402 patients who underwent HoLEP were 68.8 years (range, 52-84 years), 53.2 g (range, 23-228 g), 58.2 minutes (range, 20-230 minutes), 4.5 days (range, 2-7 days), and 9 months (range, 4-27 months), respectively; 78 complications occurred in 71 of the patients (morbidity rate, 17.6%). In MCCS grade I, complications occurred in 54 cases (69.2%); in grade II, complications occurred in 19 cases (24.3%); in grade III, complications occurred in 4 cases (5.1%); and in grade IV, 1 patient required intensive care unit care because of cerebral infarction (1.2%). There were no grade V complications. Conclusions The HoLEP-based MCCS complications classification was performed very quickly. However, MCCS, when compared with other measures of endoscopic prostate surgery experiences, including HoLEP, exposed the lack of accuracy in low grade classification and the inability to include late complications. PMID:24648872

  7. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    NASA Astrophysics Data System (ADS)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  8. Etching of moldavities under natural conditions

    NASA Technical Reports Server (NTRS)

    Knobloch, V.; Knoblochova, Z.; Urbanec, Z.

    1983-01-01

    The hypothesis that a part of the lechatellierites which originated by etching from a basic moldavite mass became broken off after deposition of moldavite in the sedimentation layer is advanced. Those found close to the original moldavite were measured for statistical averaging of length. The average length of lechatelierite fibers per cubic mm of moldavite mass volume was determined by measurement under a microscope in toluene. The data were used to calculate the depth of the moldavite layer that had to be etched to produce the corresponding amount of lechatelierite fragments. The calculations from five "fields" of moldavite surface, where layers of fixed lechatelierite fragments were preserved, produced values of 2.0, 3.1, 3.5, 3.9 and 4.5. Due to inadvertent loss of some fragments the determined values are somewhat lower than those found in references. The difference may be explained by the fact that the depth of the layer is only that caused by etching after moldavite deposition.

  9. ZERODUR: bending strength data for etched surfaces

    NASA Astrophysics Data System (ADS)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  10. Assembly Methods for Etched Foil Regenerators

    NASA Astrophysics Data System (ADS)

    Mitchell, Matthew P.

    2004-06-01

    Etched foil appears to offer substantial advantages over other regenerator materials, especially for annular regenerators. However, assembly of etched foil regenerators has been difficult because etching regenerator patterns in foil is most satisfactorily accomplished using pieces too small for a complete, spiral-wrapped regenerator. Two techniques have been developed to deal with that problem: For spiral-wrapped regenerators, a new technique for joining pieces of foil using tabs has been successfully employed. The joints are no thicker than the parent material. The tabs substantially fill the holes into which they are locked, virtually eliminating any undesired leak path through the regenerator. The holes constitute breaks in the conductive path through the regenerator. A patent is pending. An alternate method is to insert pieces of foil in a cylindrical housing one at a time. An inflatable bladder presses each newly-inserted piece of foil against the previous layer until both edges slip past each other and contact the previously-installed piece. When the bladder is deflated, the natural springiness of the foil causes the cut edges to seek the wall and meet each other in a butt joint. A patent on the method has been issued; a patent on the resulting regenerator is pending.

  11. Laser patterning of laminated structures for electroplating

    DOEpatents

    Mayer, Steven T.; Evans, Leland B.

    1993-01-01

    A process for laser patterning of a substrate so that it can be subsequently electroplated or electrolessly plated. The process utilizes a laser to treat an inactive (inert) layer formed over an active layer to either combine or remove the inactive layer to produce a patterned active layer on which electrodeposition can occur. The process is carried out by utilizing laser alloying and laser etching, and involves only a few relatively high yield steps and can be performed on a very small scale.

  12. OPTIMIZING COLLAGEN TRANSPORT THROUGH TRACK-ETCHED NANOPORES

    PubMed Central

    Bueno, Ericka M.; Ruberti, Jeffrey W.

    2008-01-01

    Polymer transport through nanopores is a potentially powerful tool for separation and organization of molecules in biotechnology applications. Our goal is to produce aligned collagen fibrils by mimicking cell-mediated collagen assembly: driving collagen monomers in solution through the aligned nanopores in track-etched membranes followed by fibrillogenesis at the pore exit. We examined type I atelo-collagen monomer transport in neutral, cold solution through polycarbonate track-etched membranes comprising 80-nm-diameter, 6-μm-long pores at 2% areal fraction. Source concentrations of 1.0, 2.8 and 7.0 mg/ml and pressure differentials of 0, 10 and 20 inH2O were used. Membrane surfaces were hydrophilized via covalent poly(ethylene-glycol) binding to limit solute-membrane interaction. Collagen transport through the nanopores was a non-intuitive process due to the complex behavior of this associating molecule in semi-dilute solution. Nonetheless, a modified open pore model provided reasonable predictions of transport parameters. Transport rates were concentration- and pressure-dependent, with diffusivities across the membrane in semi-dilute solution two-fold those in dilute solution, possibly via cooperative diffusion or polymer entrainment. The most significant enhancement of collagen transport was accomplished by membrane hydrophilization. The highest concentration transported (5.99±2.58 mg/ml) with the highest monomer flux (2.60±0.49 ×103 molecules s-1 pore-1) was observed using 2.8 mg collagen/ml, 10 inH2O and hydrophilic membranes. PMID:21394216

  13. A comparative study on detection of organic surface modifiers on mineral grains by TOF-SIMS, VUV SALI TOF-SIMS and VUV SALI with laser desorption

    NASA Astrophysics Data System (ADS)

    Dimov, S. S.; Chryssoulis, S. L.

    2004-06-01

    Results from a comparative study on the detection of organic collectors by TOF-SIMS, vacuum ultraviolet surface analysis by laser ionization with TOF-SIMS detection (VUV SALI TOF-SIMS) and VUV SALI with laser desorption (VUV TOF-LIMS) are reported. The study was carried out on a PHI 7200 TOF-SIMS instrument upgraded with two lasers: one for laser desorption and another one for VUV laser postionization. A systematic analysis of the laser desorption process lead to a set of optimized desorption parameters and desorption of molecules with a controlled level of fragmentation. The recorded spectra of organic collectors by VUV SALI with laser desorption are characterized by strong parent peaks and simpler fragmentation patterns, which allow for easy molecular identification. Advantages and limitations of the three techniques for analysis of organic collectors on mineral grains are discussed.

  14. Optimization of etching and reading procedures for the Autoscan 60 track etch system

    SciTech Connect

    McKeever, R.; Devine, R.; Coennen, C.

    1997-02-11

    The Los Alamos National Laboratory is charged with measuring the occupational exposure to radiological workers and contractors throughout the Laboratory, which includes many different sites with multiple and varied radiation fields. Of concern here are the high energy neutrons such as those generated during accelerator operations at Los Alamos Neutron Science Center (LANSCE). In 1993, the Los Alamos National Laboratory purchased an Autoscan 60 automated reader for use with chemically etched CR39 detectors. The dosimeter design employed at LANL uses a plastic, hemispherical case, encompassing a polystyrene pyramidal detector holder. The pyramidal holder supports three detectors at a 35{degree} angle. Averaging the results of the three detectors minimizes the angular dependence normally associated with a planar dosimeter. The Autoscan 60 is an automated reading system for use with CR39 chemical etch detectors. The detectors are immersed in an etch solution to enhance the visibility of the damage sites caused by recoil proton impact with the hydrogen atoms in the detector. The authors decided to increase the etch time from six hours to 15 hours, while retaining the 70 C temperature. The reason for the change in the etch is to enhance the sensitivity and precision of the CR39 detector as indicated by this study.

  15. Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma

    SciTech Connect

    Ren, Z.; Yu, S.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.

    2008-02-01

    The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.

  16. Application of laser microetching in formation of air-bearing surface for magnetic head sliders

    SciTech Connect

    Lu, Y.F.; Ye, K.D.

    1996-12-31

    Laser-induced etching of polycrystalline Al{sub 2}O{sub 3}TiC material by a tightly-focused CW Ar ion laser has been investigated in a KOH solution with different concentrations. It is found that the KOH concentration can strongly affect the etching quality where low KOH concentration can result in rough and irregular patterns. The etching effect is also related to laser power and scanning speed. Laser-induced etching of polycrystalline Al{sub 2}O{sub 3}TiC in a KOH solution is found to be a photothermal reaction in which a threshold laser power exists. With an appropriate set of etching parameters, well defined grooves can be obtained with clean side walls and with an etching rate up to several hundred micrometers per second. It is also found that the grains in the polycrystalline Al{sub 2}O{sub 3}TiC material play an important role in the etching dynamics and etching quality. This etching process is believed to be applicable to the formation of a slider surface of magnetic heads in the future.

  17. Environmentally benign etching process of amorphous silicon and tungsten using species evaporated from polytetrafluoroethylene and fluorinated ethylene propylene

    NASA Astrophysics Data System (ADS)

    Fujita, Kazushi; Hori, Masaru; Goto, Toshio; Ito, Masafumi

    2003-01-01

    Environmentally benign etching process of amorphous silicon (a-Si) and tungsten (W) by using a plasma process with an evaporation of solid materials system has been developed for replacing a conventional plasma process using green house gases, such as SF6 gas and perfluorocompound gases causing global warming. The evaporation system was designed to generate fluorocarbon species from solid materials by a CO2 laser irradiation. An electron cyclotron resonance (ECR) plasma using O2 accompanied with injection of species evaporated from solid materials has been applied to a-Si and W etching for cleaning process in chemical vapor deposition chamber. Fluorinated ethylene propylene (FEP) and polytetrafluoroethylene (PTFE) are selected as the solid material and the etching characteristics between FEP and PTFE have been compared. Furthermore, the etching of a-Si and W films has been performed in the divergent magnetic field ECR downstream plasma [electron density (ne); ~1010 cm-3, electron temperature (Te); 1.5-2.8 eV] and a planar ECR plasma [ne ~1010 cm-3, Te 3.4-4.4 eV] using O2 gas with FEP evaporation. As a result, high etching rates of a-Si and W films of above 100 nm/min were successfully obtained at a substrate temperature of 400 °C in the planar ECR plasma of higher electron temperature. CFx (x=1-3) radical densities and F atom density in plasmas were measured by an infrared diode laser absorption spectroscopy and an actinometric optical emission spectroscopy, respectively. On the basis of these measurements of species, the etching mechanisms of a-Si and W films are discussed.

  18. Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching.

    PubMed

    Yamin, Tony; Wissberg, Shai; Cohen, Hagai; Cohen-Taguri, Gili; Sharoni, Amos

    2016-06-15

    The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition. If these interface dislocations are stable at room temperature, we conjectured, a new route opens to control thickness of VO2 films by postdeposition thinning of relaxed films, overcoming the need for thickness-dependent strain-engineered substrates. This is possible only if thinning does not alter the films' electronic properties. We find that wet etching in a dilute NaOH solution can effectively thin the VO2 films, which continue to show a significant MIT, even when etched to 10 nm, for which directly deposited films show nearly no transition. The structural and chemical composition were not modified by the etching, but the grain size and film roughness were, which modified the hysteresis width and magnitude of the MIT resistance change. PMID:27183029

  19. Photoablation of polyimide with IR and UV laser radiation

    NASA Astrophysics Data System (ADS)

    Braun, R.; Nowak, R.; Hess, P.; Oetzmann, H.; Schmidt, C.

    1989-12-01

    IR and UV ablation experiments were performed for freestanding polyimide foils (75 μm) and spincoated films of polyimide (6-7 μm). Compared to results reported in the literature a considerably improved etch quality was obtained with a pulsed TEA CO2 laser. Distinct interference effects were found for KrF laser radiation and CO2 laser radiation. The fluence dependence of the etch rates was studied for excimer laser light at 248 nm and IR laser light at 1082.3, 1057.3 and 970.5 cm-1. The optical absorption coefficient was determined by reflectivity and transmittance measurements.

  20. Excimer laser ablation of ferrites

    NASA Astrophysics Data System (ADS)

    Tam, A. C.; Leung, W. P.; Krajnovich, D.

    1991-02-01

    Laser etching of ferrites was previously done by scanning a focused continuous-wave laser beam on a ferrite sample in a chemical environment. We study the phenomenon of photo-ablation of Ni-Zn or Mn-Zn ferrites by pulsed 248-nm KrF excimer laser irradiation. A transfer lens system is used to project a grating pattern of a mask irradiated by the pulsed KrF laser onto the ferrite sample. The threshold fluence for ablation at the ferrite surface is about 0.3 J/cm2. A typical fluence of 1 J/cm2 is used. The etched grooves produced are typically 20-50 μm wide, with depths achieved as deep as 70 μm . Groove straightness is good as long as a sharp image is projected onto the sample surface. The wall angle is steeper than 60 degrees. Scanning electron microscopy of the etched area shows a ``glassy'' skin with extensive microcracks and solidified droplets being ejected that is frozen in action. We found that this skin can be entirely removed by ultrasonic cleaning. A fairly efficient etching rate of about 10 nm/pulse for a patterned area of about 2 mm×2 mm is obtained at a fluence of 1 J/cm2. This study shows that projection excimer laser ablation is useful for micromachining of ferrite ceramics, and indicates that a hydrodynamic sputtering mechanism involving droplet emission is a cause of material removal.

  1. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    PubMed Central

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  2. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel.

    PubMed

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-02-01

    Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  3. GaN Etch Rates Compared with Atomic Chlorine Density and Ion Flux in an Argon/Chlorine Inductively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Mahony, C. M. O.; Rizvi, S. A.; Maguire, P. D.; Garcia, F.; Graham, W. G.

    2004-09-01

    We present GaN etch rates (maximum 700nm/min), atomic chlorine densities (via Laser Induced Fluorescence at 200W RF power), positive ion densities (Langmuir probe) and positive ion wall flux (capacitive planar probe) using an Inductively Coupled Plasma as a function of chlorine in argon gas fraction from 0% to 100% at maximum RF power and pressure of 400 W and 20 mTorr respectively. In general, with chlorine addition, etch rates rise initially then tend to saturate at fractions above 50% Cl_2. Wall flux and n^+ approximate the inverse of this behaviour. The atomic chlorine density at 200W RF power rises monotonically with a pronounced inflection near 50% Cl_2. The positive ion wall flux - atomic chlorine density product strongly correlates with etch rate suggesting physical etching dominates below 50% Cl2 and chemical processes above. This is reflected in changes of the Ga/N surface stoichiometry, determined by XPS analysis.

  4. EFFECT OF ACID ETCHING OF GLASS IONOMER CEMENT SURFACE ON THE MICROLEAKAGE OF SANDWICH RESTORATIONS

    PubMed Central

    Bona, Álvaro Della; Pinzetta, Caroline; Rosa, Vinícius

    2007-01-01

    The purposes of this study were to evaluate the sealing ability of different glass ionomer cements (GICs) used for sandwich restorations and to assess the effect of acid etching of GIC on microleakage at GIC-resin composite interface. Forty cavities were prepared on the proximal surfaces of 20 permanent human premolars (2 cavities per tooth), assigned to 4 groups (n=10) and restored as follows: Group CIE – conventional GIC (CI) was applied onto the axial and cervical cavity walls, allowed setting for 5 min and acid etched (E) along the cavity margins with 35% phosphoric acid for 15 s, washed for 30 s and water was blotted; the adhesive system was applied and light cured for 10 s, completing the restoration with composite resin light cured for 40 s; Group CIN – same as Group CIE, except for acid etching of the CI surface; Group RME – same as CIE, but using a resin modified GIC (RMGIC); Group RMN – same as Group RME, except for acid etching of the RMGIC surface. Specimens were soaked in 1% methylene blue dye solution at 24°C for 24 h, rinsed under running water for 1 h, bisected longitudinally and dye penetration was measured following the ISO/TS 11405-2003 standard. Results were statistically analyzed by Kruskal-Wallis and chi-square tests (α=0.05). Dye penetration scores were as follow: CIE – 2.5; CIN – 2.5; RME – 0.9; and RMN – 0.6. The results suggest that phosphoric acid etching of GIC prior to the placement of composite resin does not improve the sealing ability of sandwich restorations. The RMGIC was more effective in preventing dye penetration at the GIC-resin composite- dentin interfaces than CI. PMID:19089135

  5. Detailed microstructure analysis of as-deposited and etched porous ZnO films

    NASA Astrophysics Data System (ADS)

    Shang, Congcong; Thimont, Yohann; Barnabé, Antoine; Presmanes, Lionel; Pasquet, Isabelle; Tailhades, Philippe

    2015-07-01

    ZnO nanostructured materials in thin film forms are of particular interest for photovoltaic or photocatalysis processes but they suffer from a lack of simple methods for optimizing their microstructure. We have demonstrated that microporous ZnO thin films with optimized inter grain accessibility can be produce by radio frequency magnetron sputtering process and chemical etching with 2.75 mM HCl solution for different duration. The as-deposited ZnO thin films were first characterized in terms of structure, grain size, inter grain space, open cavity depth and total thickness of the film by XRD, AFM, SEM, profilometry and optical measurements. A specific attention was dedicated to the determination of the surface enhancement factor (SEF) by using basic geometrical considerations and images treatments. In addition, the porous fraction and its distribution in the thickness have been estimated thanks to the optical simulation of the experimental UV-Visible-IR spectrums using the Bruggeman dielectric model and cross section SEM images analysis respectively. This study showed that the microstructure of the as-deposited films consists of a dense layer covered by a porous upper layer developing a SEF of 12-13 m2 m-2. This two layers architecture is not modified by the etching process. The etching process only affects the upper porous layer in which the overall porosity and the inter-grain space increase with the etching duration. Column diameter and total film thickness decrease at the same time when the films are soaked in the HCl bath. The microporous structure obtained after the etching process could generate a great interest for the interfaces electronic exchanges for solar cells, photocatalysis and gas sensors applications.

  6. NiCr etching in a reactive gas

    SciTech Connect

    Ritter, J.; Boucher, R.; Morgenroth, W.; Meyer, H. G.

    2007-05-15

    The authors have etched NiCr through a resist mask using Cl/Ar based chemistry in an electron cyclotron resonance etch system. The optimum gas mixture and etch parameters were found for various ratios of Ni to Cr, based on the etch rate, redeposits, and the etch ratio to the mask. The introduction of O{sub 2} into the chamber, which is often used in the etching of Cr, served to both increase and decrease the etch rate depending explicitly on the etching parameters. Etch rates of >50 nm min{sup -1} and ratios of >1 (NiCr:Mask) were achieved for NiCr (80:20). Pattern transfer from the mask into the NiCr was achieved with a high fidelity and without redeposits for a Cl/Ar mix of 10% Ar (90% Cl{sub 2}) at an etch rate of {approx_equal}50 nm min{sup -1} and a ratio of 0.42 (NiCr:ZEP 7000 e-beam mask)

  7. Ion-induced chlorination of titanium leading to enhanced etching

    SciTech Connect

    O'Brien, W.L.; Rhodin, T.N.; Rathbun, L.C.

    1988-10-15

    The ion-induced chemical etching of titanium with chlorine has been studied. Quartz crystal microbalance studies show that the ion beam etch rate of Ti is enhanced upon addition of molecular chlorine, whereas molecular chlorine does not etch Ti in the absence of ion stimulation. This is very similar to the etching behavior of silicon in the presence of argon stimulation and chlorine gas. The etching of titanium is compared to a generalized version of the ion-assisted chemical etching model first proposed by Winters and Coburn. In this model the ion beam either enhances or induces one of the following chemical etching steps: initial adsorption, product formation, or product removal. The ion beam effect on product formation was determined by x-ray photoemission spectroscopy after sample etching. Ion beam effects on product removal were studied by measuring product distributions using modulated ion beam and time-of-flight techniques. It is found that the energetic ions induce formation of a chemically altered surface containing TiCl/sub x/ compounds. It is the ion-induced formation of this altered surface which leads to enhanced etching. Discussion in terms of the general model provides a comparison of the ion-assisted chemical etching mechanisms of titanium to silicon.

  8. Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

    SciTech Connect

    Abernathy, C.R.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-04

    Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.

  9. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene after ion etching and ion implantation

    NASA Astrophysics Data System (ADS)

    Shtansky, D. V.; Glushankova, N. A.; Kiryukhantsev-Korneev, F. V.; Sheveiko, A. N.; Sigarev, A. A.

    2011-03-01

    The ion-plasma treatment has been widely used for modifying the surface structure of polymers in order to improve their properties, but it can lead to destruction of the surface and, as a consequence, to an increase in their toxicity. A comparative study of the structure and cytotoxicity of polytetrafluoroethylene (PTFE) after the ion etching (IE) and ion implantation (II) for 10 min with energy densities of 363 and 226 J/cm2, respectively, has been performed. It has been shown that, unlike the ion implantation, the ion etching results in the destruction of the polymer and in the appearance of the cytotoxicity. The factors responsible for this effect, which are associated with the bulk and surface treatment, as well as with the influence of the temperature, have been discussed.

  10. Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation

    NASA Astrophysics Data System (ADS)

    Liang, D.; Hall, D. C.

    2007-08-01

    The authors demonstrate that the oxidation smoothing of sidewall roughness of dry-etched Al0.3Ga0.7As ridge structures is enabled through a modified wet thermal oxidation process which involves the addition of dilute amounts of O2 to the water vapor ambient. High magnification cross-section and top-view scanning electron microscope imagings both before and after oxide removal clearly show a substantial reduction of photolithography- and dry-etching-induced sidewall roughness (from σ ˜100nm down to σ ˜1-2nm), occurring only with the participation of added O2. The smoothing process provides means to realize high-index-contrast GaAs-based optical waveguides with both low bend and scattering losses.

  11. Extremely superhydrophobic surfaces with micro- and nanostructures fabricated by copper catalytic etching.

    PubMed

    Lee, Jung-Pil; Choi, Sinho; Park, Soojin

    2011-01-18

    We demonstrate a simple method for the fabrication of rough silicon surfaces with micro- and nanostructures, which exhibited superhydrophobic behaviors. Hierarchically rough silicon surfaces were prepared by copper (Cu)-assisted chemical etching process where Cu nanoparticles having particle size of 10-30 nm were deposited on silicon surface, depending on the period of time of electroless Cu plating. Surface roughness was controlled by both the size of Cu nanoparticles and etching conditions. As-synthesized rough silicon surfaces showed water contact angles ranging from 93° to 149°. Moreover, the hierarchically rough silicon surfaces were chemically modified by spin-coating of a thin layer of Teflon precursor with low surface energy. And thus it exhibited nonsticky and enhanced hydrophobic properties with extremely high contact angle of nearly 180°. PMID:21162520

  12. Effect of acid etching on bond strength of nanoionomer as an orthodontic bonding adhesive

    PubMed Central

    Khan, Saba; Verma, Sanjeev K.; Maheshwari, Sandhya

    2015-01-01

    Aims: A new Resin Modified Glass Ionomer Cement known as nanoionomer containing nanofillers of fluoroaluminosilicate glass and nanofiller 'clusters' has been introduced. An in-vitro study aimed at evaluating shear bond strength (SBS) and adhesive remnant index (ARI) of nanoionomer under etching/unetched condition for use as an orthodontic bonding agent. Material and Methods: A total of 75 extracted premolars were used, which were divided into three equal groups of 25 each: 1-Conventional adhesive (Enlight Light Cure, SDS, Ormco, CA, USA) was used after and etching with 37% phosphoric acid for 30 s, followed by Ortho Solo application 2-nanoionomer (Ketac™ N100, 3M, ESPE, St. Paul, MN, USA) was used after etching with 37% phosphoric acid for 30 s 3-nanoionomer was used without etching. The SBS testing was performed using a digital universal testing machine (UTM-G-410B, Shanta Engineering). Evaluation of ARI was done using scanning electron microscopy. The SBS were compared using ANOVA with post-hoc Tukey test for intergroup comparisons and ARI scores were compared with Chi-square test. Results: ANOVA (SBS, F = 104.75) and Chi-square (ARI, Chi-square = 30.71) tests revealed significant differences between groups (P < 0.01). The mean (SD) SBS achieved with conventional light cure adhesive was significantly higher (P < 0.05) (10.59 ± 2.03 Mpa, 95% CI, 9.74-11.41) than the nanoionomer groups (unetched 4.13 ± 0.88 Mpa, 95% CI, 3.79-4.47 and etched 9.32 ± 1.87 Mpa, 95% CI, 8.58-10.06). However, nanoionomer with etching, registered SBS in the clinically acceptable range of 5.9–7.8 MPa, as suggested by Reynolds (1975). The nanoionomer groups gave significantly lower ARI values than the conventional adhesive group. Conclusion: Based on this in-vitro study, nanoionomer with etching can be successfully used as an orthodontic bonding agent leaving less adhesive remnant on enamel surface, making cleaning easier. However, in-vivo studies are needed to confirm the validity

  13. Effect of Ag/Au bilayer assisted etching on the strongly enhanced photoluminescence and visible light photocatalysis by Si nanowire arrays.

    PubMed

    Ghosh, Ramesh; Imakita, Kenji; Fujii, Minoru; Giri, P K

    2016-03-01

    We report on the strongly enhanced photoluminescence (PL) and visible light photocatalysis by arrays of vertically aligned single crystalline Si nanowires (NWs) grown by Ag/Au bilayer assisted etching. High resolution FESEM and TEM imaging reveals that the Si NWs are decorated with ultra-small size arbitrary shaped Si nanocrystals (NCs) due to the lateral etching of the NWs. A strong broad band and tunable visible to near-infrared (NIR) photoluminescence (PL) in the range 1.3-2.4 eV are observed for these Si NWs/NCs at room temperature, depending on the etching conditions. Our studies reveal that the visible-NIR PL intensity is about two orders of magnitude higher and it exhibits faster decay dynamics in the bilayer assisted etching case as compared to the Ag or Au single layer etching case. The enhanced PL in the bimetal case is attributed to the longer length and higher density of the Si NWs/NCs, surface plasmon resonance enhanced absorption by residual bimetal NPs and the enhanced radiative recombination rate. Studies on the time evolution of PL spectral features with laser exposure under ambient conditions and laser power dependence reveal that both the quantum confinement of carriers in Si NCs and the nonbridging oxygen hole defects in the SiOx layer contribute to the tunable PL. Interestingly, Si NWs grown by Ag/Au bilayer assisted etching exhibit enhanced photocatalytic degradation of methylene blue in comparison to Si NWs grown by single layer Ag or Au assisted etching. The Schottky barrier present between bimetallic NPs and nanoporous Si NWs with Si-H bonds facilitates the photocatalytic activity by efficient separation of photogenerated e-h pairs. Our results demonstrate the superiority of the Si NW array grown by bilayer assisted etching for their cutting edge applications in optoelectronics and environmental cleaning. PMID:26907170

  14. Integration of mode-locked diode lasers

    NASA Astrophysics Data System (ADS)

    Coleman, A. Catrina; Hou, Lianping; Marsh, John H.

    2016-03-01

    Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with advantages over more conventional sources in compactness, robustness, performance stability, power consumption, and cost savings. The use of quantum well intermixing (QWI) to integrate passive sections and surface etched distributed Bragg reflectors (DBR) into monolithic laser cavity will be described. The performance of the devices will be presented.

  15. IC Fabrication Methods Improve Laser Diodes

    NASA Technical Reports Server (NTRS)

    Miller, M.; Pickhardt, V.

    1984-01-01

    Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

  16. Influence of wet etching time cycles on morphology features of thin porous Anodic Aluminum oxide (AAO) template for nanostructure's synthesis

    NASA Astrophysics Data System (ADS)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Al-Diabat, Ahmad M.; Bououdina, M.

    2015-12-01

    This study examines the influence of chemical wet etching time cycles on the morphological features of thin porous AAO template. Pore widening via wet-etching treatment at room temperature was found to modify the pore quality of AAO template and reduces the barrier layer on the bottom of AAO pore array in order to facilitate uniform electrodeposition of nanostructures onto AAO template. High quality AAO pore arrays with different mean pore diameters (64, 70, and 87 nm) were prepared under controllable pore-widening time cycles of 10, 30 and 45 min at room temperature, respectively. The AAO templates and the produced Cu nanorods were characterized using FESEM, EDX, XRD and AFM. The results indicate that the morphology of the aligned arrays of Cu nanorods is strongly affected by the duration of etching and the removal of AAO template. This study showed that the optimum etching duration required to maintain the aligned nanorods without any fracture is approximately 5 min. In addition, the regular hemispherical concave Al surface ensuring the self-ordering of AAO pore can be established when striping is employed for 45 min. Thus, it can be inferred that the duration of wet etching treatment (striping) of Al oxide film performed after the first-step anodization plays a vital role in the final arrangement of nanopores.

  17. Particle reduction and control in EUV etching process

    NASA Astrophysics Data System (ADS)

    Jun, JeaYoung; Ha, TaeJoong; Kim, SangPyo; Yim, DongGyu

    2014-10-01

    As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the ARC (Anti-Reflection Coating) and ABS (Absorber) etch in an EUV (extreme ultraviolet) mask. Therefore we studied etching techniques of EUV absorber film to find out the evasion method of particle generation. Usually, Particles are generated by plasma ignition step in etching process. When we use the standard etching process, ARC and ABS films are etched step by step. To reduce the particle generation, the number of ignition steps need to decrease. In this paper, we present the experimental results of in-situ EUV dry etching process technique for ARC and ABS, which reduces the defect level significantly. Analysis tools used for this study are as follows; TEM (for cross-sectional inspection) , SEM (for in-line monitoring ) and OES (for checking optical emission spectrum)

  18. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  19. Correlated crystallographic etching of graphene and nanoribbon formation

    NASA Astrophysics Data System (ADS)

    Johnson, Stephen; Hunley, D. Patrick; Stieha, Joseph; Sundararajan, Abhishek; Kar, Arunita; Johnson, A. T. Charlie; Strachan, Douglas

    2011-03-01

    Catalytic etching is a promising method for constructing crystallographically defined graphene structures such as nanoribbons. Catalytic etching experiments are performed and shown to contain significant correlation yielding crystallographic graphene nanoribbons. This correlation is investigated as a function of etching conditions and compared to simulations with possible sources discussed. Supported in part by NSF Award No. DMR-0805136, the Kentucky NSF EPSCoR program, the University of Kentucky Center for Advanced Materials, and the University of Kentucky Center for Nanoscale Science and Engineering.

  20. Etched-multilayer phase shifting masks for EUV lithography

    DOEpatents

    Chapman, Henry N.; Taylor, John S.

    2005-04-05

    A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

  1. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  2. A new back-etch for silicon devices

    SciTech Connect

    Malberti, P.; Ciappa, M.; Scacco, P.

    1995-12-31

    This paper reports on a new application of tetramethylammonium-hydroxide in aqueous solution (TMAHW) as back-etch for silicon integrated circuits. TMAHW has many advantages upon traditional back-etch solutions: it is selective, safe, non-toxic, inexpensive, and fully compatible with materials used in semiconductor device technology. The efficiency of this backside etching technique is demonstrated by a case history concerning aluminum silicon interdiffusion.

  3. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  4. Decontamination of metals using chemical etching

    DOEpatents

    Lerch, Ronald E.; Partridge, Jerry A.

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  5. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    DOE PAGESBeta

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  6. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    SciTech Connect

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  7. Modeling of the angular dependence of plasma etching

    SciTech Connect

    Guo Wei; Sawin, Herbert H.

    2009-11-15

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl{sub 2} plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at {approx}60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10{sup 15} atoms/cm{sup 2} on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  8. Molecular Dynamics Simulations Of Nanometer-Scale Feature Etch

    SciTech Connect

    Vegh, J. J.; Graves, D. B.

    2008-09-23

    Molecular dynamics (MD) simulations have been carried out to examine fundamental etch limitations. Beams of Ar{sup +}, Ar{sup +}/F and CF{sub x}{sup +} (x = 2,3) with 2 nm diameter cylindrical confinement were utilized to mimic 'perfect' masks for small feature etching in silicon. The holes formed during etch exhibit sidewall damage and passivation as a result of ion-induced mixing. The MD results predict a minimum hole diameter of {approx}5 nm after post-etch cleaning of the sidewall.

  9. TRAVIT: software tool to simulate dry etch in maskmaking

    NASA Astrophysics Data System (ADS)

    Babin, S.; Bay, K.; Okulovsky, S.

    2005-06-01

    A software tool, TRAVIT, has been developed to simulate dry etch in maskmaking. The software predicts the etch profile, etched critical dimensions (CDs), and CD-variation for any pattern of interest. The software also takes into account microloading effect that is pattern dependent and contributes to CD variation. Once CD variation is known, it can then be applied to correct the CD-error. Examples of simulations including variable ICP power, physical and chemical etch components, and optimization of a bias and CD variation are presented. Incorporating simulation into the maskmaking process can save cost and shorten the time to production.

  10. Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Eddy, C. R.; Hoffman, C. A.; Meyer, J. R.; Dobisz, E. A.

    1993-08-01

    It has been recently reported (J.R. Meyer, F.J. Bartoli, C.A. Hoffman, and L.R. Ram-Mohan, Phys. Rev. Lett. 64, 1963 [1990]) that novel electronic and optical effects are anticipated in nanometer scale features of narrow band gap semiconductors such as mercury cadmium telluride (MCT). These efforts could lead to the creation of non-linear optical switches, high efficiency infrared lasers, and unique nanoelectronic devices. This work reports on the first realization of MCT nanostructures through the application of e-beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave plasma source. It is shown that the low energy ions produced by an ECR system can etch MCT with good selectivity over an e-beam resist mask and with high resolution. Using these fabrication methods, 40 70 nm features with aspect ratios of 3 5∶1 and sidewall angles greater than 88° have been demonstrated. Qualitative investigations of some of the etch mechanisms of this technique are made, and results suggest a desorption limited process.

  11. Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Gray, David C.

    1992-01-01

    A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

  12. Manufacturing applications of lasers; Proceedings of the Meeting, Los Angeles, CA, Jan. 23, 24, 1986

    NASA Astrophysics Data System (ADS)

    Cheo, Peter K.

    1986-01-01

    The present conference encompasses topics in laser material processing for industrial applications, laser applications in microelectronics, laser inspection and quality control, and laser diagnostics and measurements. Attention is given to the laser welding of cylinders, production laser hardfacing of jet engine turbine blades, production laser welding of gears, electric arc augmentation for laser cutting of mild steel, laser-assisted etching for microelectronics, and laser fabrication of interconnect structures on CMOS gate arrays. Also discussed are angle-scanning laser interferometry for film thickness measurements, the application of heterodyne interferometry to disk drive technology, and CARS applications to combustion diagnostics.

  13. Bindi Tattoo on Forehead: Success with Modified R-20 Technique Using Low Fluence Q-Switched Nd Yag Laser: A Case Report

    PubMed Central

    Zawar, Vijay; Sarda, Aarti; De, Abhishek

    2014-01-01

    Bindi tattoo on the forehead, is one of the cultural practice in Indian women from rural areas. Many patients are not pleased with the appearance of their tattoo and thus seek removal. The development of quality-switched lasers has revolutionized the removal of unwanted tattoos. However, despite multiple treatment sessions, the efficacy is often found to be limited. We herein report a case of green-blue bindi tattoo which failed to clear after 8 sessions of Q-switched Nd YAG laser. The tattoo significantly cleared with R-20 method using low fluence Q-switched Nd YAG Laser. R-20 technique seems to be an effective method of tattoo removal and might be a boon for patients who are reluctant to pursue laser treatment because of fear of expenditure, side effects and uncertainty of result. We report efficacy of R-20 technique for a bindi tattoo on forehead. PMID:24761103

  14. Masking Technique for Ion-Beam Sputter Etching

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1986-01-01

    Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.

  15. Reactive ion etched substrates and methods of making and using

    SciTech Connect

    Rucker, Victor C.; Shediac, Rene; Simmons, Blake A.; Havenstrite, Karen L.

    2007-08-07

    Disclosed herein are substrates comprising reactive ion etched surfaces and specific binding agents immobilized thereon. The substrates may be used in methods and devices for assaying or isolating analytes in a sample. Also disclosed are methods of making the reactive ion etched surfaces.

  16. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  17. Rapid Dry Etching Of Photoresists Without Toxic Gases

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R.; Wydeven, Theodore

    1991-01-01

    Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.

  18. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  19. Evaluation of bond strength of orthodontic brackets without enamel etching

    PubMed Central

    Boruziniat, Alireza; Motaghi, Shiva; Moghaddas, Mohmmadjavad

    2015-01-01

    Background To compare the shear bond strength of brackets with and without enamel etching. Material and Methods In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching+Transbond XT adhesive+ Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive+ Transbond XT composite. 3- PQ1E group: Enamel etching+ PQ1 adhesive+ Transbond XT composite. 4- PQ1 group: PQ1 adhesive+ Transbond XT composite. The shear bond strengths of brackets were evaluated using universal testing machine at cross head speed of 0.5 mm/min. The Adhesive Remnant Index (ARI) was also measured. One-way ANOVA, Tukey’s post hoc, Kruskal-wallis and Mann-Witney U test were used for data analysis. Results There was a significant difference between etched and unetched groups respect to SBS and ARI (p<0.05), however; no significant difference was observed between unetched group and self-etch adhesive group (p>> 0.05). The shear bond strength of PQ1 group was the least but in acceptable range and its ARI was less than other groups. Conclusions PQ1 adhesive can be used for bracket bonding without enamel etching with adequate bond strength and minimal ARI. Key words:Bracket, shear bond strength, filled-adhesive, self-etch adhesive. PMID:26535100

  20. Reactive ion etching of quartz and Pyrex for microelectronic applications

    NASA Astrophysics Data System (ADS)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.