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Sample records for modulation doped heterostructures

  1. Analysis of energy states in modulation doped multiquantum well heterostructures

    NASA Technical Reports Server (NTRS)

    Ji, G.; Henderson, T.; Peng, C. K.; Huang, D.; Morkoc, H.

    1990-01-01

    A precise and effective numerical procedure to model the band diagram of modulation doped multiquantum well heterostructures is presented. This method is based on a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. It can be used rather easily in any arbitrary modulation-doped structure. In addition to confined energy subbands, the unconfined states can be calculated as well. Examples on realistic device structures are given to demonstrate capabilities of this procedure. The numerical results are in good agreement with experiments. With the aid of this method the transitions involving both the confined and unconfined conduction subbands in a modulation doped AlGaAs/GaAs superlattice, and in a strained layer InGaAs/GaAs superlattice are identified. These results represent the first observation of unconfined transitions in modulation doped multiquantum well structures.

  2. Effect of scattering by native defects on electron mobility in modulation-doped heterostructures

    SciTech Connect

    Walukiewicz, W.; Haller, E.E. )

    1991-04-15

    The effect of scattering by native defects on carrier mobility in modulation-doped heterostructures is calculated. The concentration of the defects is determined using the amphoteric native defect model. It is shown that the Fermi level induced reduction of the defect formation energy leads to an increased incorporation of native defects and reduced mobility in AlGaAs/GaAs inverted modulation-doped heterostructures. This new mechanism explains the experimentally observed difference in the values of electron mobilities in normal and inverted modulation-doped heterostructures. The effects of native defects on the carrier mobilities in heterostructures based on other semiconductor systems are also discussed.

  3. Photo-induced Modulation Doping in Graphene/Boron nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Velasco, Jairo, Jr.; Ju, Long; Hwang, Edwin; Kahn, Salman; Nosiglia, Casey; Tsai, Hsin-Zon; Yang, Wei; Zhang, Guangyu; Taniguchi, Takashi; Watanabe, Kenji; Zhang, Yuanbo; Crommie, Michael; Zettl, Alex; Wang, Feng

    2014-03-01

    Van der Waals heterostructures (VDH) provide an exciting new platform for materials engineering, where a variety of layered materials with different electrical, optical and mechanical responses can be stacked together to enable new physics and novel functionalities. We report an emerging optoelectronic phenomenon (i.e. photo-induced modulation doping) in the graphene-boron nitride VDH (G/BN heterostructure). We find it enables flexible and repeatable writing and erasing of charge doping in graphene with optical light. We show that the photo-induced modulation doping maintains the remarkable carrier mobility of the G/BN heterostructure, and it can be used to generate spatially varying doping profiles like pn junctions. Our work contributes towards understanding light matter interactions in VDHs, and introduces a simple technique for creating inhomogeneous doping in high mobility graphene devices. J. Velasco Jr. acknowledges support from UC President's Postdoctoral Fellowship.

  4. Investigating the thermal stability of electron transport properties in modulation-doped semiconductor heterostructure systems

    NASA Astrophysics Data System (ADS)

    Pilgrim, Ian; Scannell, Billy; See, Andrew; Montgomery, Rick; Morse, Peter; Fairbanks, Matt; Marlow, Colleen; Linke, Heiner; Farrer, Ian; Ritchie, David; Hamilton, Alex; Micolich, Adam; Eaves, Laurence; Taylor, Richard

    2013-03-01

    Since the 1950s, materials scientists have pursued the fabrication of solid-state heterostructure (HS) devices of sufficient purity to replicate electron interference effects originally observed in vacuum. The ultimate goal of HS engineering is to create a semiconductor ``billiard table'' in which electrons travel ballistically in a 2-D plane--that is, with scattering events minimized such that the electron's mean free path exceeds the device size. For the past two decades, the modulation-doped (MD) HS architecture has yielded devices supporting very high electron mobilities. In this architecture, ionized dopants are spatially removed from the plane of the electrons, such that their influence on electron trajectories is felt through presumably negligible small-angle scattering events. However, we observe that thermally induced charge redistribution in the doped layers of AlGaAs/GaAs and GaInAs/InP MD heterostructures significantly alters electron transport dynamics as measured by magnetoconductance fluctuations. This result demonstrates that small-angle scattering plays a far larger role than expected in influencing conduction properties. Funded by the Office of Naval Research, US Air Force, Australian Research Council, and Research Corporation for Science Advancement

  5. MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Mendez-Garcia, V. H.; González-Fernández, J. V.; Espinosa-Vega, L. I.; Díaz, T.; Romano, R.; Rosendo, E.; Gallardo, S.; Vázquez-Cortes, D.; Shimomura, S.

    2013-09-01

    In this work, the optical and electrical properties of simultaneously grown modulation-doped heterostructures (MDH) on (100)- and (631)-oriented GaAs substrates are investigated. Due to the amphoteric behavior of Si in AlGaAs doped films two dimensional electron (2DEG) and hole gas (2DHG) structures for the growth on (100) and (631) planes, respectively are obtained. Atomic force microscopy (AFM) revealed atomically flat surface for the (100)-MDH sample. On the contrary, (631)-MDH sustained uniform corrugation along [1¯13] after the growth of the GaAs films, which provoked anisotropic mobility of the carriers at 77 K as confirmed by the Hall effect in a double arm bar. By photoluminescence spectroscopy (PL) the band to band transition, carbon and Si-related lines were identified. The concentration of the ternary alloy and impurities were evaluated by secondary ion mass spectrometry.

  6. Controllable GMR device in a δ-doped, magnetically and electrically modulated, GaAs /Alx Ga1-x As heterostructure

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Zhang, Gui-Lian; Yang, Duan-Chui

    2016-09-01

    We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ-doped GaAs /Alx Ga1-x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio (MR) can be switched by the δ-doping. The underlying physical mechanism of the results is analysed in light of δ-doping-dependent tunneling process in the device.

  7. Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Kajdos, Adam Paul

    surface reconstruction from (1x1) to (2x1) to c(4x4) is correlated with a change from mixed SrO/TiO2 to pure TiO2 surface termination. It is argued that optimal cation stoichiometry is achieved for growth conditions within the XRD-defined growth window that result in a c(4x4) surface lattice. The development of a doped perovskite oxide semiconductor with a suitable conduction band offset is then discussed as the next necessary step towards realizing modulation-doped heterostructures. The SrTixZr1-x O3 solid solution is investigated for this purpose, with a focus on optimizing cation stoichiometry to allow for controlled doping. In particular, the hybrid MBE growth of SrTixZr1-xO3 thin films is explored using a metal-organic precursor for Zr, zirconium tert-butoxide (ZTB). The successful generation of 2DEGs by modulation doping of SrTiO3 is then demonstrated in SrTiO3/La:SrTi0.95Zr0.05O 3 heterostructures, and the electronic structure is studied by Shubnikov-de Haas analysis using multiple-subband models.

  8. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H.; Sfaxi, L.; Bru-Chevallier, C.

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  9. High-field transport properties of InAs(x)P(1-x)/InP (x = 0.3-1.0) modulation doped heterostructures at 300 and 77 K

    NASA Technical Reports Server (NTRS)

    Yang, D.; Bhattacharya, P. K.; Hong, W. P.; Bhat, R.; Hayes, J. R.

    1992-01-01

    Detailed measurements at 300 and 77 K have been made of the high-field transport properties of pseudomorphic InAsP/InP modulation-doped heterostructures grown by low-pressure organometallic CVD. The high-field channel velocities are comparable to or better than that of InGaAs/InAlAs heterostructures, and the transport properties of InAs/InP heterostucture suggest that carriers remain confined in the channel even at high fields.

  10. Growth and characterization of metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures on GaAs using a linearly graded In(AlGa)as buffer layer

    NASA Astrophysics Data System (ADS)

    Wang, S. M.; Karlsson, C.; Rorsman, N.; Bergh, M.; Olsson, E.; Andersson, T. G.

    1997-01-01

    Metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures have been grown on GaAs using a linearly graded In(AlGa)As buffer layer, and their structural and electric properties have been investigated. Surface morphology was found to depend on growth temperature and graded buffer thickness. Low growth temperature resulted in a relatively smooth surface with a minimum root-mean-square roughness value of 4-7 nm. The In(AlGa)As graded buffer effectively prevented dislocations from threading into the top layers. The epilayer grown on the graded buffer was tilted and not fully relaxed. High electron mobility and sheet density were achieved. The highest mobility value was 13740 cm2/Vs with a carrier density of 1.9 · 1012 cm-2 at 300 K. These values are comparable with InP-based InGaAs/InAlAs modulation doped heterostructures.

  11. Correlation between sheet carrier density-mobility product and persistent photoconductivity in AlGaN/GaN modulation doped heterostructures

    SciTech Connect

    Li, J.Z.; Li, J.; Lin, J.Y.; Jiang, H.X.

    2000-07-01

    High quality Al{sub 0.25}Ga{sub 0.75}N/GaN modulation-doped heterojunction field-effect transistor (MOD-HFET) structures grown on sapphire substrates with high sheet carrier density and mobility products (n{sub s}{mu} > 10{sup 16}/Vs at room temperature) have been grown by metal organic chemical vapor deposition (MOCVD). The optimized structures were achieved by varying structural parameters, including the AlGaN spacer layer thickness, the Si-doped AlGaN barrier layer thickness, the Si-doping concentration, and the growth pressure. In these structures, the persistent photoconductivity (PPC) effect associated with the two-dimensional electron gas (2DEG) system was invariantly observed. As a consequence, the characteristic parameters of the 2DEG were sensitive to light and the sensitivity was associated with permanent photoinduced increases in the 2DEG carrier mobility (mu) and sheet carrier density (n{sub s}). However, the authors observed that the magnitude of the PPC and hence the photoinduced instability associated with these heterostructures were a strong function of only one parameter, the product of n{sub s} and {mu}, which is the most important parameter for the HFET device design. For a fixed excitation photon dose, the ratio of the low temperature PPC to the dark conductivity level was observed to decrease from 200% to 3% as the n{sub s}{mu} (300 K) product was increased from 0.048 x 10{sup 16}/Vs to 1.4 x 10{sup 16}/Vs. Based on their studies, the authors suggest that the magnitude of the low temperature PPC can be used as a sensitive probe for monitoring the electronic quality of the AlGaN/GaN HFET structures.

  12. Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels

    SciTech Connect

    Baeta Moreira, M.V.; Py, M.A.; Ilegems, M.

    1993-05-01

    The molecular-beam epitaxial growth conditions of (N + 1)(InAs){sub m}/N(GaAsw){sub n} short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photoluminescence (77 K PL) spectra of GaAs/SPS/AlGaAs modulation-doped field-effect transistor-type heterostructures. By using these two characterization methods, the influences of the growth temperature T{sub s}, of the SPS channel thickness d{sub ch} and of its average indium composition y{sub m} were studied. Interesting correlations were established between their optical and their transport properties measured at 77 K either in the dark or under white-light illumination. The thickness m of the InAs layers was varied in the range 0.57 to 1.7 and sharp optimum properties were obtained slightly above m=1 monolayer.

  13. Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures

    SciTech Connect

    Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

    2004-01-30

    Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.

  14. Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

    SciTech Connect

    Ryzhii, V.; Ryzhii, M.; Mitin, V.; Shur, M. S.; Otsuji, T.

    2015-11-14

    Injection or optical generation of electrons and holes in graphene bilayers (GBLs) can result in the interband population inversion enabling the terahertz (THz) radiation lasing. The intraband radiative processes compete with the interband transitions. We demonstrate that remote doping enhances the indirect interband generation of photons in the proposed GBL heterostructures. Therefore, such remote doping helps to surpass the intraband (Drude) absorption, and results in large absolute values of the negative dynamic THz conductivity in a wide range of frequencies at elevated (including room) temperatures. The remotely doped GBL heterostructure THz lasers are expected to achieve higher THz gain compared with previously proposed GBL-based THz lasers.

  15. Effect of Split Gate Size on the Electrostatic Potential and 0.7 Anomaly within Quantum Wires on a Modulation-Doped GaAs /AlGaAs Heterostructure

    NASA Astrophysics Data System (ADS)

    Smith, L. W.; Al-Taie, H.; Lesage, A. A. J.; Thomas, K. J.; Sfigakis, F.; See, P.; Griffiths, J. P.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

    2016-04-01

    We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs /AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one-dimensional channel (estimated using a saddle-point model) and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different lengths. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.

  16. Nitrogen-related effects on low-temperature electronic properties of two-dimensional electron gas in very dilute nitride GaNxAs1-x/AlGaAs (x = 0 and 0.08%) modulation-doped heterostructures

    NASA Astrophysics Data System (ADS)

    Mootabian, Mahnaz; Eshghi, Hosein

    2013-07-01

    The low-temperature (4 K) two-dimensional (2D) electron gas mobility data versus carrier concentration in the modulation-doped dilute nitride GaAs1-xNx/Al0.3Ga0.7As (x = 0 and 0.08%) heterostructures are analyzed. Theoretical analysis is based on Fermi-Dirac statistics for the occupation of the quantum confined electronic states in the triangular quantum wells and the width of the quantum well versus 2D concentration. In addition, the mobility analysis is based on Matthiessen's rule for various scattering mechanisms. We found that the N-related neutral cluster alloy scattering together with crystal dislocations created at the interface strongly affects the electrons' mobility in the N-contained channel sample. We also found that as the electron concentration in the well increases from ˜1 × 1011 to 3.5 × 1011 cm-2 the carriers mainly occupy the first subband, tending to remain closer and closer to the hetero-interface.

  17. Effect of an in-plane magnetic field and a δ-doping on the electron transport in a nonmagnetic heterostructure

    NASA Astrophysics Data System (ADS)

    Lu, Jian-Duo; Li, Yun-Bao; Peng, Shun-Jin; Liu, Hong-Yu; Wang, Yu-Hua; Chen, Hong

    2016-04-01

    The electron tunneling through a nonmagnetic heterostructure modulated by both the in-plane magnetic field and the δ-doping has been investigated in detail using the transfer-matrix method. The numerical results indicate that, in such a nonmagnetic device, one can obtain the considerable spin polarization which is dependent on the in-plane magnetic field and the δ-doping as well as the wave vector in the plane of the barrier. Thus, we can design the spintronic devices based on nonmagnetic heterostructures controlled by the in-plane magnetic field and the δ-doping as well as the wave vector.

  18. Modulated Binary-Ternary Dual Semiconductor Heterostructures.

    PubMed

    Prusty, Gyanaranjan; Guria, Amit K; Mondal, Indranil; Dutta, Anirban; Pal, Ujjwal; Pradhan, Narayan

    2016-02-18

    A generic modular synthetic strategy for the fabrication of a series of binary-ternary group II-VI and group I-III-VI coupled semiconductor nano-heterostructures is reported. Using Ag2 Se nanocrystals first as a catalyst and then as sacrificial seeds, four dual semiconductor heterostructures were designed with similar shapes: CdSe-AgInSe2 , CdSe-AgGaSe2 , ZnSe-AgInSe2 , and ZnSe-AgGaSe2 . Among these, dispersive type-II heterostructures are further explored for photocatalytic hydrogen evolution from water and these are observed to be superior catalysts than the binary or ternary semi-conductors. Details of the chemistry of this modular synthesis have been studied and the photophysical processes involved in catalysis are investigated. PMID:26800297

  19. Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Hu, Zhongqiang; Li, Qian; Li, Meiya; Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Xingzhong; Liu, Yun; Dong, Shuxiang

    2013-03-01

    We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.

  20. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications. PMID:27506254

  1. Radial modulation doping in core-shell nanowires

    NASA Astrophysics Data System (ADS)

    Dillen, David C.; Kim, Kyounghwan; Liu, En-Shao; Tutuc, Emanuel

    2014-02-01

    Semiconductor nanowires are potential candidates for applications in quantum information processing, Josephson junctions and field-effect transistors and provide a unique test bed for low-dimensional physical phenomena. The ability to fabricate nanowire heterostructures with atomically flat, defect-free interfaces enables energy band engineering in both axial and radial directions. The design of radial, or core-shell, nanowire heterostructures relies on energy band offsets that confine charge carriers into the core region, potentially reducing scattering from charged impurities on the nanowire surface. Key to the design of such nanoscale heterostructures is a fundamental understanding of the heterointerface properties, particularly energy band offsets and strain. The charge-transfer and confinement mechanism can be used to achieve modulation doping in core-shell structures. By selectively doping the shell, which has a larger bandgap, charge carriers are donated and confined in the core, generating a quasi-one-dimensional electron system with higher mobility. Here, we demonstrate radial modulation doping in coherently strained Ge-SixGe1-x core-shell nanowires and a technique to directly measure their valence band offset. Radial modulation doping is achieved by incorporating a B-doped layer during epitaxial shell growth. In contrast to previous work showing site-selective doping in Ge-Si core-shell nanowires, we find both an enhancement in peak hole mobility compared with undoped nanowires and observe a decoupling of electron transport in the core and shell regions. This decoupling stems from the higher carrier mobility in the core than in the shell and allows a direct measurement of the valence band offset for nanowires of various shell compositions.

  2. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    NASA Astrophysics Data System (ADS)

    Lin, Shisheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian; Chen, Hongsheng

    2015-11-01

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  3. Graphene/CdTe heterostructure solar cell and its enhancement with photo-induced doping

    SciTech Connect

    Lin, Shisheng Chen, Hongsheng; Li, Xiaoqiang; Zhang, Shengjiao; Wang, Peng; Xu, Zhijuan; Zhong, Huikai; Wu, Zhiqian

    2015-11-09

    We report a type of solar cell based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.10%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by field effect transport, Raman, photoluminescence, and quantum efficiency measurements. This work demonstrates a feasible way of improving the performance of graphene/semiconductor heterostructure solar cells by combining one dimensional with two dimensional materials.

  4. Electrical property studies on chemically processed polypyrolle/aluminum doped ZnO based hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Mohan Kumar, G.; Ilanchezhiyan, P.; Madhan Kumar, A.; Yuldashev, Sh. U.; Kang, T. W.

    2016-04-01

    A hybrid structure based on p-type polypyrolle (PPy) and n-type aluminum (Al) doped ZnO nanorods was successfully constructed. The effect of Al doping on material properties of wurtzite structured ZnO were studied using several analytical techniques. To establish the desired hybrid structure, pyrrole monomers were polymerized on hydrothermally grown Al doped ZnO nanorods by chemical polymerization. The current-voltage characteristics on the fabricated PPy/Al doped ZnO heterostructures were found to exhibit excellent rectifying characteristics under dark and illumination conditions. The obtained results augment the prescribed architecture to be highly suitable for high-sensitivity optoelectronic applications.

  5. Indirect doping effects from impurities in MoS2/h-BN heterostructures

    NASA Astrophysics Data System (ADS)

    Gillen, Roland; Robertson, John; Maultzsch, Janina

    2014-08-01

    We performed density functional theory calculations on heterostructures of single layers of hexagonal BN and MoS2 to assess the effect of doping in the BN sheet and of interstitial Na atoms on the electronic properties of the adjacent MoS2 layer. Our calculations predict that n doping of the boron nitride subsystem by oxygen, carbon, and sulfur impurities causes noticeable charge transfer into the conduction band of the MoS2 sheet, while p doping by beryllium and carbon leaves the molybdenum disulphide layer largely unaffected. Intercalated sodium atoms lead to a significant increase of the interlayer distance in the heterostructure and to a metallic ground state of the MoS2 subsystem. The presence of such n dopants leads to a distinct change of valence-band and conduction-band offsets, suggesting that doped h-BN remains a suitable substrate and gate material for applications of n-type MoS2.

  6. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    NASA Astrophysics Data System (ADS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-05-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov-de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov-de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of negatively

  7. Analysis of optical gain threshold in n-doped and tensile-strained germanium heterostructure diodes

    NASA Astrophysics Data System (ADS)

    Prost, M.; El Kurdi, M.; Aniel, F.; Zerounian, N.; Sauvage, S.; Checoury, X.; BÅ`uf, F.; Boucaud, P.

    2015-09-01

    The optical emission of germanium-based luminescent and/or laser devices can be enhanced by tensile strain and n-type doping. In this work, we study by simulation the interplay between electrical transport and optical gain in highly n-doped and intrinsic germanium p-n heterostructure diodes under tensile strain. The effects of strain and doping on carrier mobilities and energy distribution are taken into account. Whereas the n-doping of Ge enhances the filling of the indirect L and Brillouin zone-center conduction band states, the n-doping also reduces the carrier injection efficiency, which is detrimental for the achievement of optical gain at reduced current densities. For applied biaxial strains larger than 1.25%, i.e., far before reaching the cross-over from indirect to direct band gap regime, undoped germanium exhibits a lower optical gain threshold as compared to doped germanium. We also show that the threshold current needed to reach transparency in germanium heterostructures has been significantly underestimated in the previous works.

  8. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    PubMed Central

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  9. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.

    PubMed

    Veal, Boyd W; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M; Eastman, Jeffrey A

    2016-01-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment. PMID:27283250

  10. Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter; Iddir, Hakim; Baldo, Peter M.; Eastman, Jeffrey A.

    2016-06-01

    Oxygen vacancies in proximity to surfaces and heterointerfaces in oxide thin film heterostructures have major effects on properties, resulting, for example, in emergent conduction behaviour, large changes in metal-insulator transition temperatures or enhanced catalytic activity. Here we report the discovery of a means of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behaviour is dependent on interface properties and is attained without cation doping or changes in the gas environment.

  11. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    DOE PAGESBeta

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  12. Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures

    SciTech Connect

    Boucherit, M.; Shoron, O.; Polchinski, C.; Jackson, C. A.; Cain, T. A.; Buffon, M. L. C.; Stemmer, S.; Rajan, S.

    2014-05-05

    We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO{sub 3} cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}.

  13. Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition.

    PubMed

    Tan, Haijie; Fan, Ye; Rong, Youmin; Porter, Ben; Lau, Chit Siong; Zhou, Yingqiu; He, Zhengyu; Wang, Shanshan; Bhaskaran, Harish; Warner, Jamie H

    2016-01-27

    We study the interactions in graphene/WS2 two-dimensional (2D) layered vertical heterostructures with variations in the areal coverage of graphene by the WS2. All 2D materials were grown by chemical vapor deposition and transferred layer by layer. Photoluminescence (PL) spectroscopy of WS2 on graphene showed PL quenching along with an increase in the ratio of exciton/trion emission, relative to WS2 on SiO2 surface, indicating a reduction in the n-type doping levels of WS2 as well as reduced radiative recombination quantum yield. Electrical measurements of a total of 220 graphene field effect transistors with different WS2 coverage showed double-Dirac points in the field effect measurements, where one is shifted closer toward the 0 V gate neutrality position due to the WS2 coverage. Photoirradiation of the WS2 on graphene region caused further Dirac point shifts, indicative of a reduction in the p-type doping levels of graphene, revealing that the photogenerated excitons in WS2 are split across the heterostructure by electron transfer from WS2 to graphene. Kelvin probe microscopy showed that regions of graphene covered with WS2 had a smaller work function and supports the model of electron transfer from WS2 to graphene. Our results demonstrate the formation of junctions within a graphene transistor through the spatial tuning of the work function of graphene using these 2D vertical heterostructures. PMID:26756350

  14. Electronic properties of C-doped (100) AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Grbić, B.; Ellenberger, C.; Ihn, T.; Ensslin, K.; Reuter, D.; Wieck, A. D.

    2005-06-01

    Carbon doped p-type AlGaAs heterostructures are investigated by low-temperature magnetotransport measurements. High quality of such two dimensional hole gases is demonstrated by observing sharp integer plateaus in Hall resistance as well as features of fractional quantum Hall effect at filling factors 4/3 and 5/3. The observed beating pattern of low-field Shubnikov-de Haas oscillations represents clear evidence for the existence of the two spin-split subbands which arise from strong spin-orbit coupling in hole systems.

  15. Intrinsic Spin-Orbit Coupling in Superconducting Delta-Doped SrTiO3 Heterostructures

    SciTech Connect

    Bell, Christopher

    2011-08-19

    We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO{sub 3} heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport scattering times several orders of magnitude higher than for conventional thin film superconductors enables a new regime to be entered, where spin-orbit coupling effects arise non-perturbatively.

  16. Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure

    NASA Astrophysics Data System (ADS)

    Fan, Yabin; Upadhyaya, Pramey; Kou, Xufeng; Lang, Murong; Takei, So; Wang, Zhenxing; Tang, Jianshi; He, Liang; Chang, Li-Te; Montazeri, Mohammad; Yu, Guoqiang; Jiang, Wanjun; Nie, Tianxiao; Schwartz, Robert N.; Tserkovnyak, Yaroslav; Wang, Kang L.

    2014-07-01

    Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great attention to spin torques arising from large spin-orbit coupling (SOC). Given the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics. Here we demonstrate experimentally the magnetization switching through giant SOT induced by an in-plane current in a chromium-doped TI bilayer heterostructure. The critical current density required for switching is below 8.9 × 104 A cm-2 at 1.9 K. Moreover, the SOT is calibrated by measuring the effective spin-orbit field using second-harmonic methods. The effective field to current ratio and the spin-Hall angle tangent are almost three orders of magnitude larger than those reported for HMFHs. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.

  17. Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures.

    PubMed

    Beeler, M; Hille, P; Schörmann, J; Teubert, J; de la Mata, M; Arbiol, J; Eickhoff, M; Monroy, E

    2014-03-12

    We report the observation of transverse-magnetic-polarized infrared absorption assigned to the s-p(z) intraband transition in Ge-doped GaN/AlN nanodisks (NDs) in self-assembled GaN nanowires (NWs). The s-p(z) absorption line experiences a blue shift with increasing ND Ge concentration and a red shift with increasing ND thickness. The experimental results in terms of interband and intraband spectroscopy are compared to theoretical calculations of the band diagram and electronic structure of GaN/AlN heterostructured NWs, accounting for their three-dimensional strain distribution and the presence of surface states. From the theoretical analysis, we conclude that the formation of an AlN shell during the heterostructure growth applies a uniaxial compressive strain which blue shifts the interband optical transitions but has little influence on the intraband transitions. The presence of surface states with density levels expected for m-GaN plane charge-deplete the base of the NWs but is insufficient to screen the polarization-induced internal electric field in the heterostructures. Simulations show that the free-carrier screening of the polarization-induced internal electric field in the NDs is critical to predicting the photoluminescence behavior. The intraband transitions, on the other hand, are blue-shifted due to many-body effects, namely, the exchange interaction and depolarization shift, which exceed the red shift induced by carrier screening. PMID:24502703

  18. Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures.

    PubMed

    Velasco, Jairo; Ju, Long; Wong, Dillon; Kahn, Salman; Lee, Juwon; Tsai, Hsin-Zon; Germany, Chad; Wickenburg, Sebastian; Lu, Jiong; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

    2016-03-01

    Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p-n junctions and ultrathin memory devices. PMID:26852622

  19. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  20. Optically pumped terahertz wave modulation in MoS2-Si heterostructure metasurface

    NASA Astrophysics Data System (ADS)

    Zheng, Wei; Fan, Fei; Chen, Meng; Chen, Sai; Chang, Sheng-Jiang

    2016-07-01

    An optically pumped terahertz (THz) modulator based on a MoS2-Si heterostructure metasurface are fabricated and investigated in this paper. The THz wave modulation in MoS2 metasurface has been demonstrated by THz time domain spectroscopy experiment and numerical simulation, which can reach over 90% under the continuous wave laser pumping of 4W/cm2 power density. Importantly, the catalysis of photocarrier generation in MoS2-Si heterostructure has been proved by the comparsion between the modulation depth of metasurface with and without MoS2 nanosheet under the same pumping power, and we found that the strcuture of metasurface and polariztion direction can also influence the photocarrier density in MoS2 metasurface. This novel THz modulator based on 2D material has a high effective modulation on THz waves under a low pumping power, which has a bright potential in THz applications.

  1. Charge carrier transport and separation in pristine and nitrogen-doped graphene nanowiggle heterostructures

    SciTech Connect

    Lherbier, Aurélien; Liang, Liangbo; Charlier, Jean -Christophe; Meunier, Vincent

    2015-09-03

    Electronic structure methods are combined into a multiscale framework to investigate the electronic transport properties of recently synthesized pristine and nitrogen-doped graphene nanowiggles and their heterojunctions deposited on a substrate. The real-space Kubo-Greenwood transport calculations reveal that charge carrier mobilities reach values up to 1,000 cm2 V–1 s–1 as long as the amount of substrate impurities is sufficiently low. Owing to their type-II band alignment, atomically precise heterostructures between pristine and N-doped graphene nanowiggles are predicted to be excellent candidates for charge carrier separation devices with potential in photoelectric and photocatalytic water splitting applications.

  2. Photoluminescence lineshape features of carbon δ-doped GaAs heterostructures.

    PubMed

    Schuster, J; Kim, T Y; Batke, E; Reuter, D; Wieck, A D

    2012-04-25

    Photoluminescence lineshape properties of quasi-two-dimensional electron systems in setback δ-doped GaAs heterostructures are studied at liquid helium temperature. Contributions from the ground and the first excited two-dimensional subband are clearly observed. A simple fit to the lineshape including broadening demonstrates that there is an exponential low-energy tail associated with the ground subband. No such tail is observed for the first excited subband. The fit precisely reveals the subband bottom energies, the Fermi energy, the electron temperature and the recombination intensities. A self-consistent calculation of subband properties including the potential contribution of the setback δ-doping reproduces well the subband properties and the recombination intensities. PMID:22446024

  3. Field-effect-induced two-dimensional electron gas utilizing modulation doping for improved ohmic contacts

    NASA Astrophysics Data System (ADS)

    Mondal, Sumit; Gardner, Geoff; Watson, John; Manfra, Micheal J.

    2014-03-01

    Recently there has been a significant interest in the use of GaAs-based quantum dots for spin qubits. Progress is hindered by the presence of charge noise in modulation doped heterostructures where fluctuations occurring in the remote ionized dopant layer couple to the qubit. In this work we demonstrate the experimental realization of a new field effect transistor (FET) device where the active channel region is locally devoid of the silicon doping layer and hence precludes the possibility of charge fluctuations on ionized dopants causing instability. The underlying heterostructure was grown by molecular beam epitaxy and is designed with an etch-stop between the silicon delta-doping layer and single interface GaAs/AlGaAs heterojunction that facilitates removal of the modulation doping at precise locations defined by lithography. The resulting 2DEG is induced by a field-effect and the density is tunable in a wide range of 6X1010 cm-2 to 2.7X1011 cm-2. The design, fabrication, and operation of these devices along with low temperature (T = 0.3K) transport data is presented.

  4. Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Maksimov, O.; Liu, B. Z.

    2008-06-01

    We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga xO y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

  5. Electron scattering by native defects in uniformly and modulation doped semiconductor structures

    SciTech Connect

    Walukiewicz, W.

    1989-11-01

    Formation of native defects in GaAs is described in terms of the amphoteric native defect model. It is shown that Fermi energy induced formation of gallium vacancies is responsible for the limitations of maximum free electron concentration in GaAs. The effect of the defects on electron mobility in heavily doped n-GaAs is quantitatively evaluated. Defect scattering explains the abrupt reduction of electron mobility at high doping levels. Also, it is demonstrated that native defects are responsible for the mobility reduction in inverted modulation doped GaAs/AlGaAs heterostructures. The amphoteric defect model also explains a distinct asymmetry in defect formation in n- and p-GaAs. In p-GaAs the Fermi level induced reduction of the defect formation energy is much smaller, and therefore the concentration of the native defects is negligible compared with the hole concentration. 43 refs., 5 figs.

  6. Highly Luminescent Heterostructured Copper-Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling.

    PubMed

    Ang, Huixiang; Bosman, Michel; Thamankar, Ramesh; Zulkifli, Muhammad Faizal B; Yen, Swee Kuan; Hariharan, Anushya; Sudhaharan, Thankiah; Selvan, Subramanian Tamil

    2016-08-18

    The structural characteristics of the seed-mediated synthesis of heterostructured CuS-ZnS nanocrystals (NCs) and Cu-doped ZnS (ZnS:Cu) NCs synthesized by two different protocols are compared and analyzed. At high Cu dopant concentrations, segregated subclusters of ZnS and CuS are observed. The photoluminescence quantum yield of ZnS:Cu NCs is about 50-80 %; a value much higher than that of ZnS NCs (6 %). Finally, these NCs are coated with a thin silica shell by using (3-mercaptopropyl)triethoxysilane in a reverse microemulsion to make them water soluble. Cytotoxicity experiments show that these silica-coated NCs have greatly reduced toxicity on both cancerous HeLa and noncancerous Chinese hamster ovary cells. The labeling of cancerous HeLa cells is also demonstrated. PMID:27146419

  7. Field-effect-induced two-dimensional electron gas utilizing modulation-doped ohmic contacts

    NASA Astrophysics Data System (ADS)

    Mondal, Sumit; Gardner, Geoffrey C.; Watson, John D.; Fallahi, Saeed; Yacoby, Amir; Manfra, Michael J.

    2014-11-01

    Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate reliable low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect and is tunable over a wide range of density. Device design, fabrication, and low temperature (T=0.3 K) transport data are reported.

  8. Electric-field-modulated nonvolatile resistance switching in VO₂/PMN-PT(111) heterostructures.

    PubMed

    Zhi, Bowen; Gao, Guanyin; Xu, Haoran; Chen, Feng; Tan, Xuelian; Chen, Pingfan; Wang, Lingfei; Wu, Wenbin

    2014-04-01

    The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices. PMID:24634978

  9. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    PubMed Central

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  10. Manipulating surface-related ferromagnetism in modulation-doped topological insulators.

    PubMed

    Kou, Xufeng; He, Liang; Lang, Murong; Fan, Yabin; Wong, Kin; Jiang, Ying; Nie, Tianxiao; Jiang, Wanjun; Upadhyaya, Pramey; Xing, Zhikun; Wang, Yong; Xiu, Faxian; Schwartz, Robert N; Wang, Kang L

    2013-10-01

    A new class of devices based on topological insulators (TI) can be achieved by the direct engineering of the time-reversal-symmetry (TRS) protected surface states. In the meantime, a variety of interesting phenomena are also expected when additional ferromagnetism is introduced to the original topological order. In this Letter, we report the magnetic responses from the magnetically modulation-doped (Bi(z)Sb(1-z))2Te3/Cr(x)(Bi(y)Sb(1-y))2Te3 bilayer films. By electrically tuning the Fermi level across the Dirac point, we show that the top TI surface carriers can effectively mediate the magnetic impurities and generate robust ferromagnetic order. More importantly, such surface magneto-electric effects can be either enhanced or suppressed, depending on the magnetic interaction range inside the TI heterostructures. The manipulation of surface-related ferromagnetism realized in our modulation-doped TI device is important for the realization of TRS-breaking topological physics, and it may also lead to new applications of TI-based multifunctional heterostructures. PMID:24020459

  11. An analysis of doping modulated superlattice structures

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.

    1985-01-01

    A new method of growing doping modulated superlattice structures is discussed. This method uses organo-metallic chemical vapor deposition (MO-CVD) with the added feature of controlled plasma in the growth regions. The main objective was to study how the growth environment affected the electronic and optical properties of the superlattice structures. Because a serious safety hazard was discovered in the growth process, no superlattice structures were fabricated and the research on this material had to be terminated. The hazard had to do with the lack of adequate means for the disposal of toxic elemental beryllium.

  12. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  13. A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Ma, Wen-Yue; Zhang, Gui-Lian; Yang, Shi-Peng

    2015-07-01

    We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.

  14. Fabrication and characterization of a-oriented TbFeO3/Nb-doped SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Li, P. G.; Li, W. L.; Zhang, M.; An, Y. H.; Guo, D. Y.; Wu, Z. P.; Lei, M.; Wang, S. L.; Shen, J. Q.; Xiao, J. H.; Tang, W. H.

    2015-01-01

    The a-axis oriented TbFeO3, (TFO) thin film was epitaxially grown on (001) Nb-1 wt.%-doped SrTiO3 (Nb-STO) single crystal substrate to construct a heterostructure. The heterostructure exhibited a good rectifying behavior over the temperature range of 25-300 K, and the rectification ratio was continuously enhanced with increasing temperature. In positive bias direction, transport mechanism of the heterostructure showed a crossover from the Schottky-emission-like to a space-charge-limited type at 120 K, the temperature at which the TFO shows a magnetic ordering, while in the negative bias direction it was solely dominated by the space-charge-limited mechanism. The result indicates that coupling between electrical and magnetic orders can influence the rectifying behavior of the heterostructure. The observation hints the possibility to tune rectifying properties of a heterostructure via influencing magnetic properties of the magnetic layer.

  15. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE PAGESBeta

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; et al

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  16. Doping modulated carbon nanotube synapstors for a spike neuromorphic module.

    PubMed

    Shen, Alex Ming; Kim, Kyunghyun; Tudor, Andrew; Lee, Dongwon; Chen, Yong

    2015-04-01

    A doping-modulated carbon nanotube (CNT) electronic device, called a "synapstor," emulates the function of a biological synapse. The CNT synapstor has a field-effect transistor structure with a random CNT network as its channel. An aluminium oxide (Al2 O3 ) film is deposited over half of the CNT channel in the synapstor, converting the covered part of the CNT from p-type to n-type, forming a p-n junction in the CNT channel and increasing the Schottky barrier between the n-type CNT and its metal contact. This scheme significantly improves the postsynaptic current (PSC) from the synapstor, extends the tuning range of the plasticity, and reduces the power consumption of the CNT synapstor. A spike neuromorphic module is fabricated by integrating the CNT synapstors with a Si-based "soma" circuit. Spike parallel processing, memory, and plasticity functions of the module are demonstrated. The module could potentially be integrated and scaled up to emulate a biological neural network with parallel high-speed signal processing, low power consumption, memory, and learning capabilities. PMID:25423906

  17. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

    PubMed

    Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

    2014-06-24

    Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics. PMID:24824139

  18. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  19. Scalable digital spatial light modulator-micromesh heterostructures for real time wave optical applications.

    PubMed

    Jeong, Hoon; Choi, Jaewu

    2014-09-22

    For large-scale real time wave optical applications, we propose and demonstrate scalable simple digital spatial light modulator (SLM)-micromesh (μM) heterostructures, which fully harness ubiquitous well developed consumer information displays for real time large-scale SLMs and advanced patterning technologies for promoting the wave optical properties of SLMs of any size. Weakly diffractive projection mode large-scale SLMs with poor demultiplexity are transformed to highly diffractive mode heterostructures with fine patterned micromeshes as efficient demultiplexers or wave optical promoters. As a result, diffraction efficiency, diffraction angle, demultiplexity, multiplexity, reconstructed image quality and numbers of visibly reconstructed images largely increase even though the pixel pitches of the employed SLMs are many orders of magnitude larger than the wavelength of the illuminating light. The approach shown in this study can be applicable even for any sized weakly diffractive SLMs, and can simultaneously increase the effective spatial bandwidth and the physical dimension required for their wave optical applications. This can't be achieved by presently available SLMs alone. PMID:25321757

  20. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    NASA Astrophysics Data System (ADS)

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  1. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

    PubMed Central

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-01-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices. PMID:26954833

  2. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

    PubMed

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-01-01

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices. PMID:26954833

  3. High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application

    NASA Astrophysics Data System (ADS)

    Abe, M.; Abe, Y.; Kogushi, N.; Ang, K. S.; Hofstetter, R.; Wang, H.; Ng, G. I.

    2013-07-01

    Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to be 4900 V/W with 110 μs under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32 × 32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.

  4. Manipulating Surface-induced Ferromagnetism in Modulation-doped Topological Insulators

    NASA Astrophysics Data System (ADS)

    Kou, Xufeng; He, Liang; Lang, Murong; Fan, Yabin; Jiang, Ying; Wang, Yong; Xiu, Faxian; Wang, Kang; Device Research Laboratory Team; CenterElectron Microscopy; State Key Laboratory of Silicon Materials Collaboration; ECE Department Collaboration

    2013-03-01

    The manipulation of topological surface states is a key to realize applicable devices of topological insulators. In addition to the direct engineering of time-reversal-symmetry protected surface states, recent work suggests that various physical responses can be obtained from surface helical states by integrating additional ferromagnetism or superconductivity to the original topological order. Here, we report the coexistence and tunability of bulk carrier density-independent and surface-mediated electrically controllable ferromagnetisms in modulation-doped Crx(BiySb1-y)2Te3 epitaxial thin films. We demonstrate for the first time a dramatic enhancement of surface-induced magnetization on TI / Cr-TI bilayer devices. The surface magneto-electric effects can be either enhanced significantly or completely switched-off, by tuning the separation of the surface from the magnetic impurities. The electric-field-modulated ferromagnetism in our modulation-doped TI hetero-structures is fundamentally important for the realization of the quantum anomalous Hall Effect as well as the axion electromagnetic dynamics, and thus provides a new approach for spintronics applications. The authors would also like to acknowledge helpful discussions with Dr. Alexei Fedorov and Dr. Mathew Marcus from the Advanced Light Source at Berkeley.

  5. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    SciTech Connect

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-12-07

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs.

  6. Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

    SciTech Connect

    Gulyaev, D. V. Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.

    2015-02-15

    The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p{sup +}-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.

  7. Room-temperature light emission from an airbridge double-heterostructure microcavity of Er-doped Si photonic crystal

    NASA Astrophysics Data System (ADS)

    Wang, Yue; An, Jun-ming; Wu, Yuan-da; Hu, Xiong-wei

    2016-01-01

    We experimentally demonstrate an efficient enhancement of luminescence from two-dimensional (2D) hexagonal photonic crystal (PC) airbridge double-heterostructure microcavity with Er-doped silicon (Si) as light emitters on siliconon-insulator (SOI) wafer at room temperature. A single sharp resonant peak at 1 529.6 nm dominates the photoluminescence (PL) spectrum with the pumping power of 12.5 mW. The obvious red shift and the degraded quality factor (Q-factor) of resonant peak appear with the pumping power increasing, and the maximum measured Q-factor of 4 905 is achieved at the pumping power of 1.5 mW. The resonant peak is observed to shift depending on the structural parameters of PC, which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.

  8. The electric transport properties of Al-doped ZnO/BiFeO3/ITO glass heterostructure

    NASA Astrophysics Data System (ADS)

    Fan, Fei; Chen, Changle; Luo, Bingcheng; Jin, Kexin

    2011-04-01

    BiFeO3 (BFO) and 4 wt. % Al-doped ZnO (ZAO) layers were grown on indium tin oxide (ITO) glass substrate using a pulsed laser deposition (PLD) method. I-V curves of the ZAO/BFO/ITO glass structure were investigated over the temperature range from 60 to 240 K. Analysis of the leakage current demonstrates that Poole-Frenkel emission is the dominant mechanism in our sample. The relations between resistance and temperature at positive and negative bias voltages are different, and the difference arises from the ferroelectric switching in BFO and the interfacial depletion layer between the semiconducting and the ferroelectric layers. Magnetoresistance (MR) effect is observed and the negative MR is related to the electron spin-dependent scattering and the interface resistance of the heterostructure.

  9. Transport in two-dimensional modulation-doped semiconductor structures

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.; Kodiyalam, S.; Pfeiffer, L. N.; West, K. W.

    2015-05-01

    We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants, which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first-order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultrahigh-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultrapure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

  10. La-doped BaTiO{sub 3} heterostructures: Compensating the polarization discontinuity

    SciTech Connect

    Kumah, D. P.; Clarke, R.; Yacoby, Y.; Pauli, S. A.; Willmott, P. R.

    2013-12-01

    We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO{sub 3}-SrTiO{sub 3} interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO{sub 3} film.

  11. Control of Rewriteable Doping Patterns in Graphene/Boron Nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Ju, Long; Jiang, Lili; Shi, Zhiwen; Ashby, Paul; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    Spatial control of charge doping in 2D materials is a promising technique for designing future electronic devices and understanding novel physics. Electrostatic gating and chemical doping are common methods to achieve control of charge doping in 2D materials. However, these approaches suffer from complicated fabrication processes that introduce impurities, change material properties irreversibly, and lack flexibility. Here, we introduce a new method for patterning rewriteable doping profiles with local interface charge transfer from defects in a tunable BN substrate into an adjacent layer of graphene. We characterize these spatial doping patterns through local probe and transport techniques. This technique enables many novel device designs for 2D materials, including atomically thin p-n junctions and rewriteable memory devices.

  12. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  13. Control of Rewriteable Doping Patterns in Graphene/Boron Nitride Heterostructures

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Ju, Long; Jiang, Lili; Shi, Zhiwen; Ashby, Paul; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    Spatial control of charge doping in 2D materials is a prerequisite for designing future electronic devices and understanding novel physics. Electrostatic gating and chemical doping are two of the most common methods to achieve this. However, these approaches suffer from complicated fabrication processes that introduce impurities, change material properties irreversibly, and lack flexibility. Here we introduce a new method for patterning rewriteable doping profiles using an STM tip by way of local tip-voltage-induced ionization of defects in a BN substrate. We characterize these spatial doping patterns through local probe and transport techniques. This technique enables many novel device designs for 2D materials, including atomically thin p-n junctions and rewriteable memory devices.

  14. The modulation of grain boundary barrier in ZnMgO/ZnO heterostructure by surface polar liquid

    PubMed Central

    Ji, Xu; Zhu, Yuan; Chen, Mingming; Su, Longxing; Chen, Anqi; Gui, Xuchun; Xiang, Rong; Tang, Zikang

    2014-01-01

    Modulation of grain boundary barrier in ZnO layer by polar liquid, was investigated in ZnMgO/ZnO heterostructures grown by plasma-assisted molecular beam epitaxy. Traditionally, surface adsorbates can only affect the surface atoms or surface electronic states. However, it was found that the electronic conduction property of ZnO far from the surface could be tailored obviously by the polar liquid adsorbed on the ZnMgO surface. Physically, this phenomenon is supposed to be caused by the electrostatical couple between the liquid polarity and the grain boundary barrier in the ZnO layer through crystal polarization field. PMID:24566523

  15. Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Eisele, H.; Ivanova, L.; Borisova, S.; Dähne, M.; Winkelnkemper, M.; Ebert, Ph.

    2009-04-01

    We investigated the imaging mechanisms of a Si doping modulation in GaN by cross-sectional scanning tunneling microscopy (STM). The Si doping modulation gives rise to a voltage and tip dependent height modulation of at least 0.4 Å. The origin of the height modulation in constant-current STM images is traced to two mechanisms. A doping-induced modu-lation of the band edge energies yields a voltage dependent electronic contrast and an additional mechanical relaxation of the doping-induced strain at the cleavage surface is respon-sible for a voltage independent modulation of 0.35 Å.

  16. Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Harunaka; Nagira, Takashi; Kawazu, Zempei; Sakaino, Go; Nishida, Takehiro; Takemi, Masayoshi

    2015-03-01

    We report on the stable growth of ruthenium doped InP (Ru-InP) and its application in optical communication devices, grown by metal-organic vapor phase epitaxy. Ru-InP has semi-insulating characteristics for both n- and p-InP. The resistivity of the p/Ru/p-InP structure was 2×107 Ω cm for a Ru concentration of 5×1017 cm-3 in Ru-InP with a Ru-InP thickness greater than 1.0 μm. However, the resistivity was very low when the Ru-InP thickness was less than 1.0 μm. We investigated the Zn diffusion from p-InP to Ru-InP and found two Zn diffusion fronts in Ru-InP. Each diffusion front had a correlation with the Ru and Zn concentrations. By optimizing the current blocking layers in the Ru-InP and Zn-InP layers in buried-heterostructure lasers (BH-lasers), an output power over 10 mW was realized for laser diodes, even when they were operated at 95 °C.

  17. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    PubMed

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene. PMID:23886348

  18. Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb:SrTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya

    2015-08-01

    CoFe2O4 (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 104, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  19. Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

    1995-01-01

    The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

  20. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  1. High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity.

    PubMed

    Gao, Yuanda; Shiue, Ren-Jye; Gan, Xuetao; Li, Luozhou; Peng, Cheng; Meric, Inanc; Wang, Lei; Szep, Attila; Walker, Dennis; Hone, James; Englund, Dirk

    2015-03-11

    Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz. PMID:25700231

  2. Vortex lattices in the superconducting phases of doped topological insulators and heterostructures

    NASA Astrophysics Data System (ADS)

    Hung, Hsiang-Hsuan; Ghaemi, Pouyan; Hughes, Taylor L.; Gilbert, Matthew J.

    2013-01-01

    Majorana fermions are predicted to play a crucial role in condensed matter realizations of topological quantum computation. These heretofore undiscovered quasiparticles have been predicted to exist at the cores of vortex excitations in topological superconductors and in heterostructures of superconductors and materials with strong spin-orbit coupling. In this work, we examine topological insulators with bulk s-wave superconductivity in the presence of a vortex lattice generated by a perpendicular magnetic field. Using self-consistent Bogoliubov-de Gennes calculations, we confirm that beyond the semiclassical, weak-pairing limit the Majorana vortex states appear as the chemical potential is tuned from either side of the band edge so long as the density of states is sufficient for superconductivity to form. Further, we demonstrate that the previously predicted vortex phase transition survives beyond the semiclassical limit. At chemical potential values smaller than the critical chemical potential, the vortex lattice modes hybridize within the top and bottom surfaces, giving rise to a dispersive low-energy mid-gap band. As the chemical potential is increased, the Majorana states become more localized within a single surface but spread into the bulk toward the opposite surface. Eventually, when the chemical potential is sufficiently high in the bulk bands, the Majorana modes can tunnel between surfaces and eventually a critical point is reached at which modes on opposite surfaces can freely tunnel and annihilate leading to the topological phase transition previously studied in the work of Hosur [Phys. Rev. Lett.10.1103/PhysRevLett.107.097001 107, 097001 (2011)].

  3. Selectively doped GaAs/N-Al(0.3)Ga(0.7)As heterostructures grown by gas-source MBE

    NASA Astrophysics Data System (ADS)

    Ando, Hideyasu; Kondo, Kazuhiro; Ishikawa, Hideaki; Sasa, Shigehiko; Inata, Tsuguo

    1988-05-01

    Selectively doped GaAs/N-Al(0.3)Ga(0.7)As heterostructures with a 6 nm spacer layer have been grown for the first time by gas-source MBE using triethylgallium and triethylaluminum as group III sources, and metallic arsenic. A reasonably high two-dimensional electron gas (2DEG) mobility of 48,000 sq cm / Vs (77 K) with a sheet electron concentration of 6.8 x 10 to the 11th/sq cm was obtained at a substrate temperature of 580 C and an arsenic pressure of 0.00011.

  4. Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

    NASA Astrophysics Data System (ADS)

    Gulyaev, D. V.; Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.; Protasov, D. Yu; Gutakovskii, A. K.; Ber, B. Ya; Kazantsev, D. Yu

    2016-03-01

    The peculiarities of a new type of pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructures with the additional acceptor doping of barriers used for the creation of the power SHF pseudomorphic high electron mobility transistor (pHEMT) have been studied. A comparison of the transport characteristic of the new and typical pHEMT heterostructures was carried out. The influence of the doped acceptor impurities in the AlGaAs barriers of the new pHEMT heterostructure on the transport properties was studied. It was shown that the application of the additional p+ doped barrier layers allows the achievement of a double multiplex increase in the two-dimensional electron gas (2DEG) concentration in the InGaAs quantum well with no parasite parallel conductivity in the AlGaAs barrier layers. An estimation of the concentration of the doped donors and acceptors penetrating into the deliberately undoped InGaAs quantum well from the AlGaAs barriers was performed by second ion mass spectrometry and photoluminescence spectrometry methods. Taking into account the electron scattering by the ionized impurity atoms, calculation of the electron mobility in the InGaAs channel showed that some reduction of the electron mobility results from scattering by the ionized Si donor due to an increase in the Si concentration and, therefore, is not caused by the application of additional p+ doped layers in the construction of pHEMT heterostructures.

  5. Spatial phase modulation from permanent memory in doped glass.

    PubMed

    Myint, Thandar; Alfano, R R

    2010-04-15

    Diffraction rings are observed from photoinduced permanent memory of doped glass. The permanent memory is created by the high-intensity picosecond laser beam. A 1 mm spot size of laser beam creates spatially variable refractive index memory, which appears as a void located inside the glass. When a probe laser beam passes through the memory region, the diffraction rings arisen from spatial phase modulation of the transverse phase of the input beam are created. Agreement between the observed and calculated beam pattern using Kirchhoff's diffraction integral is satisfactory. PMID:20410991

  6. Modulation of thermoelectric power factor via radial dopant inhomogeneity in B-doped Si nanowires.

    PubMed

    Zhuge, Fuwei; Yanagida, Takeshi; Fukata, Naoki; Uchida, Ken; Kanai, Masaki; Nagashima, Kazuki; Meng, Gang; He, Yong; Rahong, Sakon; Li, Xiaomin; Kawai, Tomoji

    2014-10-01

    We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneously B-doped Si nanowires. The field effect measurements revealed the enhancement of hole mobility for these VLS grown B-doped Si nanowires due to the modulation doping effect. This mobility enhancement increases overall electrical conductivity of nanowires without decreasing the Seebeck coefficient value, resulting in the increase of thermoelectric power factor. In addition, we found that tailoring the surface dopant distribution by introducing surface δ-doping can further increase the power factor value. Thus, intentionally tailoring radial dopant inhomogeneity promises a way to modulate the thermoelectric power factor of semiconductor nanowires. PMID:25229842

  7. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  8. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

    SciTech Connect

    Silenas, A.; Pozela, Yu. Pozela, K.; Juciene, V.; Vasil'evskii, I. S.; Galiev, G. B.; Pushkarev, S. S.; Klimov, E. A.

    2013-03-15

    The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2-4) Multiplication-Sign 10{sup 7} cm/s in an electric field of 5 Multiplication-Sign 10{sup 3} V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4.0 Multiplication-Sign 10{sup 12} cm{sup -2}, the maximum drift velocity is as high as 2 Multiplication-Sign 10{sup 7} cm/s in an electric field of 7 Multiplication-Sign 10{sup 3} V/cm.

  9. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

    2015-05-01

    We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  10. Effect of Doping Profile and Concentration on the Near-Infrared Optical Properties of AlGaN/GaN and AlInN/GaN Heterostructures

    NASA Astrophysics Data System (ADS)

    Cervantes, Mayra; Edmunds, Colin; Li, Donghui; Tang, Liang; Shao, Jiayi; Gardner, Geoff; Manfra, Michael; Malis, Oana

    2012-02-01

    Intersubband (ISB) devices utilizing III-nitrides have recently attracted attention for near- and far- infrared optoelectronic applications. In order to achieve efficient ISB transitions, large doping densities are typically required (>1E18 cm-3). The large impurity density has significant effects on the band structure and material quality, effects that are reflected in important device parameters such as transition energies and linewidths. To determine the optimal doping concentration and profile for III-N intersubband devices, we carried out a systematic study of optical and structural properties of strained AlGaN/GaN and lattice-matched AlInN/GaN heterostructures grown by MBE on quasi-bulk GaN substrates. The lattice-matched AlInN/GaN system is targeted because it allows growth of thick strain-free materials. However, it also presents some considerable growth challenges due to the vastly different optimal growth conditions for Al and In containing nitrides. The transition energy and line profile were determined by direct and photoinduced absorption measurements, while the material quality was assessed using TEM and high resolution x-ray diffraction. The FWHM of the ISB transition at 1.9 μm was found to vary up to 60% with the position of delta doping in the quantum well.

  11. Near-infrared electroluminescence from light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Yang; Lv, Chunyan; Zhu, Chen; Li, Si; Ma, Xiangyang; Yang, Deren

    2014-05-01

    We report on near-infrared (NIR) electroluminescence (EL) from the light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures. NIR emissions peaking at ˜910, 1090, and 1370 nm, originated from intra-4f transitions in Nd3+ ions, can be activated by a forward bias voltage as low as ˜5 V. Such NIR EL is triggered by the energy transferred from TiO2 host to Nd3+ ions. It is found that the coexistence of anatase and rutile phases in the TiO2 host enables the device to exhibit pronounced Nd-related EL without concurrent emission from the TiO2 host itself, quite other than the case of existing only anatase phase in TiO2 host. We tentatively suggest that the anatase/rutile interface states play important role in the energy transfer from TiO2 host to Nd3+ ions.

  12. Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

    SciTech Connect

    Wang, Qiangwen; Zhao, Meng; Wei, Maocai; Zhang, Feng; Zhang, Yuan; Sun, Beilei; Li, Meiya E-mail: myli@whu.edu.cn; Liu, Xiaolian

    2015-08-10

    CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

  13. Axial Ge/Si nanowire heterostructure tunnel FETs

    SciTech Connect

    Picraux, Sanuel T; Daych, Shadi A

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  14. Heterostructure quantum confined Stark effect electrooptic modulators operating at 938 nm

    NASA Astrophysics Data System (ADS)

    Hayduk, Michael J.; Krol, Mark F.; Boncek, Raymond K.

    1993-12-01

    Electro-optics modulators are a necessary component of emerging optical fiber based local area interconnects. One type of modulator, suitable for use in optical interconnects, is an asymmetric Fabry-Perot reflection modulator (ARM). This type of an intensity modulator uses an electro-optic material as the spacer material to balance the normally unequal front and back mirror reflectances. The quantum confined Franz-Keldysh and Stark effects shift the absorption edge of semiconductor multiple quantum well (MQW) materials to longer wavelengths in the presence of an external electric field applied perpendicular to the MQW layers, thereby changing the reflectance of the etalon. The combined coherence effects of the etalon coupled with the quantum effects of the MQW materials result in a large modulation depth and a low insertion loss. P-I-N diode structures using an In Ha As/GaAs MQW structure as the intrinsic region were fabricated for the purpose of characterizing the electro-absorption associated with different applied electric fields. Quantum confined Franz-Keldysh and Stark shifts were observed for applied electric fields as large as 6.58 x 10000 V/cm. The resulting change in the absorption coefficient was found to be -3.7 x 1000 cm to the minus 1st power which is sufficient to design a high-speed ARM with a large modulation depth and a low insertion loss.

  15. Ultralow equivalent magnetic noise in a magnetoelectric Metglas/Mn-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Wang, Yaojin; Gao, Junqi; Li, Menghui; Hasanyan, D.; Shen, Ying; Li, Jiefang; Viehland, D.; Luo, Haosu

    2012-07-01

    An ultralow equivalent magnetic noise of 6.2 pT/√Hz at 1 Hz was obtained in a bimorph heterostructure sensor unit consisting of longitudinal-magnetized Metglas layers and a transverse-poled 1 mol. % Mn-doped Pb(Mg1/3Nb2/3)O3-29PbTiO3 (PMN-PT) single crystal. Furthermore, the equivalent magnetic noise was ≤1 pT/√Hz at 10 Hz. Compared with previously reported multi-push-pull configuration Metglas/PMN-PT sensor units, the current heterostructure exhibits a higher magnetoelectric coefficient of 61.5 V/(cm × Oe), a similar equivalent magnetic noise at 1 Hz and a lower noise floor at several hertz range. The ultralow equivalent magnetic noise in this sensor unit is due to the low tangent loss and ultrahigh piezoelectric properties of Mn-doped PMN-PT single crystals.

  16. Electrical properties of modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hwang, S.; Lansari, Y.; Yang, Z.; Cook, J. W.; Schetzina, J. F.

    1991-10-01

    Growth of modulation-doped HgTe-CdTe superlattices (SLs) at very low temperatures (140 °C) by photoassisted molecular beam epitaxy is reported. SL layer thicknesses were intentionally chosen such that most of the SLs studied are inverted-band semimetals or inverted-band semiconductors. Both p- and n-type samples were successsfully prepared and studied. The doped superlattices exhibit excellent electrical properties. Lack of carrier freeze-out at low temperatures provides convincing evidence that modulation-doping has been achieved.

  17. Heterodimensional Schottky contacts to modulation-doped heterojunction with application to photodetection

    NASA Astrophysics Data System (ADS)

    Seddik, Amro Anwar

    The growing technological demand for high speed and compact integrated electronics and Optics is a pressing challenge. Speed and compactness necessitate low power consumption semiconductors with high transport mobility carriers, with potential of ultra large-scale integration of electronic and Optoelectronics circuitry. One avenue to fulfill these requirements is to utilize reduced dimensionality where carriers are spatially confined to less than three-dimensions, causing their energy levels to become quantized and their transport favorably affected. With recent progress in semiconductor growth and processing technologies low dimensionality has become practically realizable, this makes the study of contact properties to these systems increasingly important. In this work we study the contact between a low- dimensional semiconductor structure and a three- dimensional metal and the application of such a contact in photodetection. We theoretically derive the thermionic emission current for Schottky contact to two-dimensional and one-dimensional structures. The derivation underscores the discrete nature of low-dimensional structures and shows that the thermionic emission current is reduced by a factor exponentially proportional to the first quantized energy level. We also propose and formulate, for the first time, a physical phenomenon in two-dimensional structures created by modulation doping of a heterojunction, which is the effect of the cloud of electrons in the small bandgap material on the thermionic emission current. We have named this the electron- electron cloud effect; we show that this interaction increases the effective Schottky barrier height in a fashion counter to the image force lowering mechanism. In order to realize Schottky contact to low-dimensional structures, we have fabricated a novel Heterojunction Metal-Semiconductor-Metal (HMSM) photodetector. Experimental characterization and the general trends of the behavior of the HMSM devices are presented

  18. Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-03-01

    Silicon carbide nanotubes (SiCNTs) have received a great deal of scientific and commercial interest due to their intriguing properties that include high temperature stability and electronic properties. For their efficient and widespread applications, tuning of electronic properties of SiCNTs is an attractive study. In this article, electronic properties of sulphur doped (S-doped) zigzag (9 , 0) SiCNT is investigated by ab initio calculations based on density functional theory (DFT). Energy band structures and density of states of fully optimized undoped and doped structures with varying dopant concentration are calculated. S-doped on C-site of the nanotube exhibits a monotonic reduction of energy gap with increase in dopant concentration, and the nanotube transforms from semiconductor to metal at high dopant concentration. In case of S-doped on Si-site doping has less influence on modulating electronic structures, which results in reduction of energy gap up to a moderate doping concentration. Importantly, S preferential substitutes of Si-sites and the nanotube with S-doped on Si-site are energetically more stable as compared to the nanotube with S-doped on C-site. The study of tunable electronic properties in S-doped SiCNT may have potential in fabricating nanoelectronic devices, hydrogen storage and gas sensing applications.

  19. Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular-beam epitaxy

    SciTech Connect

    Li, X.; Wang, W.I.; Cho, A.Y.

    1993-05-01

    High-quality InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures were grown using silicon as an n-type dopant on the (311)A orientation for the first time by the planar-doping technique in molecular-beam epitaxy. An electron mobility as high as 50 000 cm{sup 2}/V s with a sheet carrier concentration of 1.9x10{sup 12}/cm{sup 2} at 77 K is achieved. MODFETs with 1.2 {mu}m gate length exhibit an extrinsic transconductance of 400 mS/mm and a maximum drain current of 485 mA/mm. The results are comparable to that of MODFETs grown on (100) InP substrates. Our results point to the new possibility of making p-n multilayer structures with all-silicon doping. 11 refs., 5 figs.

  20. Double-doped double-strained modulation-doped field effect transistor: 3D-SMODFET

    NASA Astrophysics Data System (ADS)

    Martin, Glenn Harvey

    This dissertation reviews the operation of MODFETs and the current status they have achieved as the world's fastest transistor. The utilization of AlGaAs/InGaAs heterostructures in the MODFET has resulted in the wide spread use of PHEMTs in the microwave industry today. This structure's increasing popularity is mainly due to the improvement in the quality and price of GaAs substrates over the past ten years. As the cost of good semi-insulating GaAs substrates has dropped, economic forces and the industries' need for microwave applications (wireless market) have driven the PHEMT into the production line of many companies world wide. The cost advantages of monolithic integration has results in the wide spread applications of monolithic microwave integrated circuits (MMIC). The advantages of the AlInAs/InGaAs heterostructure are numerous and will be discussed in detail within this dissertation. The simple fact of this is the continued research in using the AlInAs/InGaAs heterostructure on GaAs substrates with the inherent problems of the large lattice mismatch. In this dissertation the careful optimization of the AlInAs/InGaAs heterostructure for use in MODFET structures is done. In reviewing epitaxial designs for AlInAs/InGaAs heterostructures it became clear that the common InP-based MODFET was not optimized. This conclusion is based on the fact when comparing the AlInAs/InGaAs MODFET to the AlGaAs/InGaAs PHEMT they received a lot of bang for the buck. The large conduction band discontinuity (Delta Esb{C}) of the AlInAs/InGaAs heterostructure allowed for simple quick designs to easily out perform the AlGaAs/InGaAs PHEMTs. Results of this careful optimization of the AlInAs/InGaAs MODFET on InP substrates are an exceptional industry record high 2DEG sheet charge of 8.4× 10sp{12} cmsp{-2} with a corresponding current of 1,850 mA/mm. This record high performance was been achieved through (i) the careful optimization of MBE growth of pseudomorphic heterojunctions, (ii

  1. A review of nano-optics in metamaterial hybrid heterostructures

    NASA Astrophysics Data System (ADS)

    Singh, Mahi R.

    2014-03-01

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  2. A review of nano-optics in metamaterial hybrid heterostructures

    SciTech Connect

    Singh, Mahi R.

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  3. Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer

    NASA Astrophysics Data System (ADS)

    Atmaca, G.; Ardali, S.; Tiras, E.; Malin, T.; Mansurov, V. G.; Zhuravlev, K. S.; Lisesivdin, S. B.

    2016-04-01

    The scattering mechanisms limiting mobility for low-dimensional charge carriers in a two-dimensional electron gas (2DEG) in undoped and doped AlGaN/AlN/GaN heterostructures with and without Si3N4 passivation are investigated. Hall effect measurements were carried out at temperatures from 1.8 K to 262 K and at a fixed magnetic field of 1 T. A good consistency was found between the calculated and the experimental results. The effects of in situ Si3N4 passivation on the 2DEG mobility are also discussed with majority scattering mechanisms. Interface-related parameters including quantum well width, deformation potential constant and correlation length of interface roughness were obtained from the fits of the analytical expressions of scattering mechanisms and compared for each heterostructure. After in situ Si3N4 passivation, we found that the effect of the interface roughness scattering, which was the dominant scattering mechanism at low temperatures, on the 2DEG mobility was more effective in undoped and doped AlGaN/GaN heterostructures.

  4. Systematic study on the spacer-dependent magnetic properties of Mn δ-doped GaAs/(Ga, Mn)As ferromagnetic heterostructures: from first principles

    NASA Astrophysics Data System (ADS)

    Wang, Xiaofang; Chen, Xiaoshuang; Zhou, Xiaohao; Lu, Wei

    2009-01-01

    First-principles calculations based on density-functional theory have been performed on the spacer-dependent magnetic properties of δ-doped GaAs/(Ga, Mn)As ferromagnetic heterostructures (DFH). It is found that all the structures show ferromagnetic (FM) alignment as the favoured configuration. Their electronic structures are half-metallic independent of the spacer thickness d. The interlayer exchange coupling (IEC) between two magnetic layers decreases sharply at first with increasing d, then reaches a stationary value at d = 4a0 (a0 is the lattice constant of GaAs), where the FM and antiferromagnetic states become energetically degenerate. The charge density and the strong spin-polarized holes are concentrated mostly in the vicinity of MnAs magnetic layers for all the structures. After the injection of free holes into the system, we confirm the free-hole mediated mechanism for the intralayer exchange coupling and IEC. Furthermore, the injection of holes enhances the intralayer exchange coupling much more than the IEC. From these results, it is definitely shown that the magnetic coupling of DFH can get across a nonmagnetic spacer. It is closely related to the spacer thickness d, and the redistribution of injection holes plays a key role when d is small.

  5. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Payette, C.; Wang, K.; Koppinen, P. J.; Dovzhenko, Y.; Sturm, J. C.; Petta, J. R.

    2012-01-01

    We perform quantum Hall measurements on three types of commercially available modulation-doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 × 1011/cm2 and mobilities in excess of 100 000 cm2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

  6. Modulating TiO2 photocatalyst by Al doping: Density functional theory approach

    NASA Astrophysics Data System (ADS)

    Zhao, Ya Fei; Li, Can; Lu, Song; Gong, Yin Yan; Niu, Leng Yuan; Liu, Xin Juan

    2016-06-01

    In this work, systematic study of the thermal stability, crystal structure and electronic properties of Al doped TiO2 were studied by the first principles calculations. The results showed that Al atoms preferentially occupying the interstitial site under Ti-rich condition, but substituting the Ti atom under O-rich condition. In contrast to pure TiO2, the values of VBM and CBM are reduced for Al substituting Ti doped mode, but increased for Al interstitial atom doped mode. Thus, we can modulate the preparation condition and dosage concentration for preparing the optimal photocatalyst.

  7. Modulation doping of double-exchange ferromagnetism in an antiferromagnetic manganite: Theory and Synthesis

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Anand; Santos, T. S.; Kirby, B. J.; Kumar, Sanjeev; May, S. J.; Borchers, J. A.; Maranville, B. B.; Zarestky, J.; Te Velthuis, S. G. E.; van den Brink, Jeroen

    2011-03-01

    In this talk we shall discuss the concepts that underlie modulation doping in the context of manganites, particularly the high bandwidth La 1-x Sr x Mn O3 , and how modulation doped structures are realized using oxide-MBE based techniques. The transport and magnetic properties of modulation doped antiferromagnetic digital superlattices of (LaMn O3)1 /(SrMn O3)1 will be discussed in the context of theoretical ideas about exchange interactions in these materials going back to the seminal work of de Gennes, and compared to similar structures in other parts of the La 1-x Sr x Mn O3 phase diagram. U. S. Department of Energy, BES, Contract No. DE-AC02-06CH11357; NIST, U.S. Department of Commerce.

  8. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    PubMed

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character. PMID:27282959

  9. Charge distribution and response time for a modulation-doped extrinsic infrared detector

    NASA Technical Reports Server (NTRS)

    Hadek, Victor

    1987-01-01

    The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.

  10. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    NASA Astrophysics Data System (ADS)

    Mogi, M.; Yoshimi, R.; Tsukazaki, A.; Yasuda, K.; Kozuka, Y.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2015-11-01

    Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb)2Te3 films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

  11. Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

    SciTech Connect

    Mogi, M. Yoshimi, R.; Yasuda, K.; Kozuka, Y.; Tsukazaki, A.; Takahashi, K. S.; Kawasaki, M.; Tokura, Y.

    2015-11-02

    Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs) such as Cr- and V-doped (Bi,Sb){sub 2}Te{sub 3}. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb){sub 2}Te{sub 3} films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of both the surfaces based on non-Cr-doped (Bi,Sb){sub 2}Te{sub 3} films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the higher-temperature and zero magnetic-field quantum conduction.

  12. Chemical doping modulation of nonlinear photoluminescence properties in monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari

    2016-05-01

    We demonstrate a simple modulation technique of nonlinear optical properties in monolayer (1L) MoS2 via chemical doping. The strong nonlinear behavior of the exciton photoluminescence (PL) intensity is observed with increasing excitation power density for low-electron-density 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ)-doped 1L-MoS2, whereas the exciton PL intensity of as-prepared, heavily electron-doped 1L-MoS2 exhibits weak sublinear behavior. These results are attributable to an enhanced exciton–exciton annihilation rate for the excitons in F4TCNQ-doped 1L-MoS2 as the dominant decay pathway under strong optical excitation conditions.

  13. All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

    PubMed

    Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

    2013-05-20

    This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation. PMID:23736401

  14. Gating versus doping: Quality parameters of two-dimensional electron systems in undoped and doped GaAs/AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Peters, S.; Tiemann, L.; Reichl, C.; Wegscheider, W.

    2016-07-01

    We present an experimental study of the scattering mechanisms in a two-dimensional electron system which is either fully induced by the field effect or resulting from remote doping. The quality criteria—the electron mobility, the quantum scattering time, and the number and development of certain fractional quantum Hall states—are analyzed and compared. By eliminating the scattering off remote ionized impurities (RI) in undoped systems, we can identify the density regimes most susceptible to RI scattering and their impact on the formation of fractional quantum Hall states.

  15. Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Yi, Wei; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.; Sokolich, Marko

    2015-04-01

    Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω.mm is achieved at 1.8 K.

  16. Quantum Heterostructures

    NASA Astrophysics Data System (ADS)

    Mitin, Vladimir; Kochelap, Viacheslav; Stroscio, Michael A.

    1999-07-01

    Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.

  17. Refractive index modulation in polymer film doped with diazo Meldrum's acid

    NASA Astrophysics Data System (ADS)

    Zanutta, Alessio; Villa, Filippo; Bertarelli, Chiara; Bianco, Andrea

    2016-08-01

    Diazo Meldrum's acid undergoes a photoreaction induced by UV light and it is used as photosensitizer in photoresists. Upon photoreaction, a change in refractive index occurs, which makes this system interesting for volume holography. We report on the sublimation effect at room temperature and the effect of photoirradiation on the refractive index in thin films of CAB (Cellulose acetate butyrate) doped with different amount of diazo Meldrum's acid. A net modulation of the refractive index of 0.01 is achieved with 40% of doping ratio together with a reduction of the film thickness.

  18. Tailoring the core electron density in modulation-doped core‑multi-shell nanowires

    NASA Astrophysics Data System (ADS)

    Buscemi, Fabrizio; Royo, Miquel; Goldoni, Guido; Bertoni, Andrea

    2016-05-01

    We show how a proper radial modulation of the composition of core-multi-shell nanowires (NWs) critically enhances the control of the free-carrier density in the high-mobility core with respect to core‑single-shell structures, thus overcoming the technological difficulty of fine tuning the remote doping density. We calculate the electron population of the different NW layers as a function of the doping density and of several geometrical parameters by means of a self-consistent Schrödinger–Poisson approach: free carriers tend to localize in the outer shell and screen the core from the electric field of the dopants.

  19. Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

    PubMed Central

    Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

    2013-01-01

    Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

  20. Electron mobilities and quantum Hall effect in modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hoffman, C. A.; Meyer, J. R.; Bartoli, F. J.; Lansari, Y.; Cook, J. W., Jr.; Schetzina, J. F.

    1991-10-01

    Photoassisted molecular-beam epitaxy and controlled modulation doping have been used to grow HgTe-CdTe superlattices with n-type carrier concentrations of up to 3×1017 cm-3. It is found that in contrast to Hg1-xCdxTe alloys where the electron mobility decreases strongly with donor concentration, μn in the modulation-doped superlattices is nearly independent of ND at large ND. We also discuss an observation of the quantum Hall effect associated with carriers distributed throughout the interior of a HgTe-CdTe superlattice. Whereas previous reports of quantized steps in the Hall conductivity have involved a small number of conduction channels (hence a small fraction of the superlattice periods), we observe plateaus at multiples of ~=200e2/h in a number of 200-period superlattices with high doping levels. This indicates participation by nearly all wells in the superlattice, and implies that the controlled doping is extremely uniform.

  1. Efficient and Hysteresis-Free Field Effect Modulation of Ambipolarly Doped Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Xingyue; Yang, Yiming; Hou, Yasen; Travaglini, Henry C.; Hellwig, Luke; Hihath, Sahar; van Benthem, Klaus; Lee, Kathleen; Liu, Weifeng; Yu, Dong

    2016-05-01

    The subpicosecond metal-insulator phase transition in vanadium dioxide (VO2 ) has attracted extensive attention with potential applications in ultrafast Mott transistors, which are based on electric-field-induced phase transition. However, the development of VO2 -based transistors lags behind, owing to inefficient and hysteretic gate modulation. Here we report ambipolar doping and strong field effects free of hysteresis in single-crystal VO2 nanowires synthesized via catalyst-free chemical vapor deposition. The ambipolarly doped VO2 nanowires are achieved by controlling the oxygen vacancy density during the synthesis and show strong gate effects because of their relatively low doping level. Both the doping type of the nanowires and the band-bending direction at the metal-insulator domain walls are reversibly switched by electrochemical gating, as revealed by scanning photocurrent microscopy. Furthermore, we eliminate the hysteresis in gate sweep via a hybrid gating method, which combines the merits of liquid-ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers opportunities on understanding the phase transition mechanism and enables electronic applications based on VO2 .

  2. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  3. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGESBeta

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  4. Electro-optic modulation in hybrid solgel doped with Disperse Red chromophore.

    PubMed

    Lu, Dong; Zhang, Hongxi; Fallahi, Mahmoud

    2005-02-01

    An electro-optically active hybrid solgel doped with Disperse Red 13 has been developed by use of a simple solvent-assisted method. It permits a high loading concentration and has low optical loss at 1550 nm. A channel waveguide amplitude modulator has been fabricated by use of active and passive hybrid solgel materials. The device shows an electro-optic coefficient of 14 pm/V at 1550 nm and stable operation. PMID:15751884

  5. Electro-optic modulation in hybrid solgel doped with Disperse Red chromophore

    NASA Astrophysics Data System (ADS)

    Lu, Dong; Zhang, Hongxi; Fallahi, Mahmoud

    2005-02-01

    An electro-optically active hybrid solgel doped with Disperse Red 13 has been developed by use of a simple solvent-assisted method. It permits a high loading concentration and has low optical loss at 1550 nm. A channel waveguide amplitude modulator has been fabricated by use of active and passive hybrid solgel materials. The device shows an electro-optic coefficient of 14 pm/V at 1550 nm and stable operation.

  6. Ferroelectric gate effect in modulation doped CdTe/CdMgTe quantum wells

    SciTech Connect

    Kolkovsky, V.; Wojciechowski, T.; Zaleszczyk, W.; Wiater, M.; Wojtowicz, T.; Karczewski, G.

    2010-01-04

    We show an effective control of the carrier concentration confined in a modulation doped CdTe quantum well caped by a ferroelectric CdZnTe gate. The 2DEG concentration can by permanently changed by changing the direction of the build-in electric field of the ferroelectric CdZnTe gate. The concentration of the 2DEG changes by 30% upon a poling of the gate. The effect is reproducible. It can be employed in non-volatile memories.

  7. Experimental Performance of a Single-Mode Ytterbium-doped Fiber Ring Laser with Intracavity Modulator

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We have developed a linearly polarized Ytterbium-doped fiber ring laser with a single longitudinal mode output at 1064 run. A fiber-coupled intracavity phase modulator ensured mode-hop free operation and allowed fast frequency tuning. The fiber laser was locked with high stability to an iodine-stabilized laser, showing a frequency noise suppression of a factor approx 10 (exp 5) at 1 mHz

  8. The design of Cu-doped ZnO thermoelectric module (simulation study)

    NASA Astrophysics Data System (ADS)

    Hadi, Syamsul; Suratwan, Agus; Kurniawan, Agus; Budiana, Eko Prasetya; Suyitno

    2016-03-01

    The p-type semiconductor of Cu-doped ZnO-based thermoelectric material has already been synthesized and studied as an energy harvester. The next challenge is manufacturing the thermoelectric module in the development of thermoelectric as an eco-friendly material in the future. This research aims to investigate the effect of thermoelectric geometric design on the electrical output power and voltage and to recommend the most appropriate thermoelectric geometric design. The design of thermoelectric generator (TEG) includes the determinations of dimension (width, length, and height), number of modules, and semiconductor materials. The simulation used the coupled-field analysis of ANSYS APDL 14.5 in the steady state condition. The p- and n- type thermoelectric material used Cu-doped ZnO and Al-doped ZnO, respectively. The width of element and the number of thermoelectric module were varied to obtain a thermoelectric design, which produces the largest current, power, and voltage. The result of research shows that the t hermoelectric generator with the element widths of 0.94 mm, 1.125 mm, 1.05 mm, and 1.2 mm generates the largest power output and voltage, namely: 0.32 W and 0.89 V, 0.38 W and 0.98 V, 0.45 W and 1.06 V, and 0.52 W and 1.13 V, respectively.

  9. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    SciTech Connect

    Yang, Chan Ho; Seidel, Jan; Kim, S. Y.; Rossen, P. B.; Yu, Pu; Gajek, Martin; Chu, Ying-Hao; Martin, Lane W; Holcromb, M. B.; He, Q; Maksymovych, Petro; Balke, Nina; Kalinin, Sergei V; Baddorf, Arthur P; Basu, S. R.; Scullin, M. L.; Ramesh, R.

    2009-01-01

    Many interesting materials phenomena such as the emergence of high-T{sub c} superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO{sub 3} through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A 'dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of {approx} 1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO{sub 3}.

  10. Self-Assembly-Induced Alternately Stacked Single-Layer MoS2 and N-doped Graphene: A Novel van der Waals Heterostructure for Lithium-Ion Batteries.

    PubMed

    Zhao, Chenyang; Wang, Xu; Kong, Junhua; Ang, Jia Ming; Lee, Pooi See; Liu, Zhaolin; Lu, Xuehong

    2016-01-27

    In this article, a simple self-assembly strategy for fabricating van der Waals heterostructures from isolated two-dimensional atomic crystals is presented. Specifically, dopamine (DOPA), an excellent self-assembly agent and carbon precursor, was adsorbed on exfoliated MoS2 monolayers through electrostatic interaction, and the surface-modified monolayers self-assembled spontaneously into DOPA-intercalated MoS2. The subsequent in situ conversion of DOPA to highly conductive nitrogen-doped graphene (NDG) in the interlayer space of MoS2 led to the formation of a novel NDG/MoS2 nanocomposite with well-defined alternating structure. The NDG/MoS2 was then studied as an anode for lithium-ion batteries (LIBs). The results show that alternating arrangement of NDG and MoS2 triggers synergistic effect between the two components. The kinetics and cycle life of the anode are greatly improved due to the enhanced electron and Li(+) transport as well as the effective immobilization of soluble polysulfide by NDG. A reversible capacity of more than 460 mAh/g could be delivered even at 5 A/g. Moreover, the abundant voids created at the MoS2-NDG interface also accommodate the volume change during cycling and provide additional active sites for Li(+) storage. These endow the NDG/MoS2 heterostructure with low charge-transfer resistance, high sulfur reservation, and structural robustness, rendering it an advanced anode material for LIBs. PMID:26745784

  11. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect

    Dayeh, Shadi A.; Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  12. Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis.

    PubMed

    Nazir, Safdar; Behtash, Maziar; Cheng, Jianli; Luo, Jian; Yang, Kesong

    2016-01-28

    The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may

  13. Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

    NASA Technical Reports Server (NTRS)

    Hadek, V.; Farhoomand, J.; Beichman, C. A.; Watson, D. M.; Jack, M. D.

    1985-01-01

    A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

  14. Fabrication and measurement of quantum dots in double gated, dopantless Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Ward, Daniel; Mohr, Robert; Prance, Jonathan; Gamble, John; Savage, Don; Lagally, Max; Coppersmith, Susan; Eriksson, Mark

    2012-02-01

    Significant progress has been made towards quantum dot spin qubits in Si/SiGe single and double quantum dots. In the past, these structures have been created by depleting a modulation-doped 2DEG that forms at the Si/SiGe interface. The modulation doping in such devices is believed to be a source of charge noise. Recently, undoped structures have been explored for the formation of both 2DEGs and quantum dots in Si/SiGe. Here we discuss measurements on double gated, dopantless quantum dots in Si/SiGe heterostructures. The devices are based on a new ``island mesa'' design incorporating micro-ohmic contacts. We present transport measurements on a double quantum dot showing a smooth transition from single dot to double dot behavior.

  15. Surface plasmons on a doped graphene sheet with periodically modulated conductivity

    NASA Astrophysics Data System (ADS)

    Ben Rhouma, M.; Oueslati, M.; Guizal, B.

    2016-08-01

    We propose a model taking into account the periodic spatial modulation of a doped graphene sheet conductivity when it is placed in the vicinity of a dielectric grating. We then compute the absorption and study the excitation of surface plasmons on such a structure. We show that it is possible to excite surface modes leading to very high absorption. Our findings could be of interest in the design of graphene-based plasmonic devices and sensors working in the infra-red and the terahertz regions of the electromagnetic spectrum.

  16. Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy

    SciTech Connect

    Xiao, Yang; Zhai, Zhao-Hui; Zhu, Li-Guo E-mail: huangwanxia@scu.edu.cn; Li, Jun; Peng, Qi-Xian; Li, Ze-Ren; Shi, Qi-Wu; Huang, Wan-Xia E-mail: huangwanxia@scu.edu.cn; Yue, Fang; Hu, Yan-Yan

    2015-07-20

    The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-to-metal transition (IMT) of undoped and tungsten (W)-doped VO{sub 2} film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO{sub 2} film and also reduces the pump fluence threshold of photo-induced IMT in VO{sub 2} film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO{sub 2}, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO{sub 2}.

  17. Ultrafast terahertz modulation characteristic of tungsten doped vanadium dioxide nanogranular film revealed by time-resolved terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Xiao, Yang; Zhai, Zhao-Hui; Shi, Qi-Wu; Zhu, Li-Guo; Li, Jun; Huang, Wan-Xia; Yue, Fang; Hu, Yan-Yan; Peng, Qi-Xian; Li, Ze-Ren

    2015-07-01

    The ultrafast terahertz (THz) modulation characteristic during photo-induced insulator-to-metal transition (IMT) of undoped and tungsten (W)-doped VO2 film was investigated at picoseconds time scale using time-resolved THz spectroscopy. W-doping slows down the photo-induced IMT dynamic processes (both the fast non-thermal process and the slow metallic phase propagation process) in VO2 film and also reduces the pump fluence threshold of photo-induced IMT in VO2 film. Along with the observed broadening of phase transition temperature window of IMT in W-doped VO2, we conclude that W-doping prevents metallic phase domains from percolation. By further extracting carrier properties from photo-induced THz conductivity at several phase transition times, we found that the electron-electron correlation during IMT is enhanced in W-doped VO2.

  18. Modulation doping of double-exchange ferromagnetism in an antiferromagnetic manganite: Magnetic Structure

    NASA Astrophysics Data System (ADS)

    Santos, T. S.; Bhattacharya, A.; Te Velthuis, S. G. E.; Kirby, B. J.; Borchers, J. A.; Maranville, B. B.; May, S. J.; Kumar, S.; van den Brink, J.; Zarestky, J.

    2011-03-01

    In his pioneering work, de Gennes described a canted antiferromagnetic (AF) state that arises when mobile carriers are added to an insulating AF manganite. However, attempts to realize this canted AF state have been impeded by phase segregation into mixed F and AF phases for x=0.1-0.2. Using a digital synthesis technique to carry out modulation doping of charge carriers into an AF host near x=0.5, we exploit the competing double-exchange and superexchange interactions to realize the canted AF state predicted by de Gennes. We observed the canted AF state using polarized neutron reflectometry and neutron diffraction using polarized neutrons and polarization analysis. Theoretical consideration using the two-orbital model shows that these additional carriers cause a local enhancement of F double-exchange with respect to AF superexchange, resulting in local canting of the AF spins, where the canting angle depends on the doping level. We observe that the canting angle varies with the spreading of charge near the delta-doped layer. Funded by DOE-BES: Scientific User Facilities Div. & Div. of Materials Science & Engineering, and US Dept. of Commerce

  19. Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

    NASA Astrophysics Data System (ADS)

    Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

    2016-04-01

    We report on metalorganic vapor phase epitaxy (MOVPE) of distributed Bragg reflectors (DBR) applying a periodic modulation of the GaN doping concentration only. The doping modulation changes the refractive index of GaN via the Burstein-Moss-effect. MOVPE growth of highly doped GaN:Ge and modulation of the dopant concentration by at least two orders of magnitude within few nanometers is required to achieve a refractive index contrast of 2-3%. Such modulation characteristic is achieved despite the presence of Ge memory effects and incorporation delay. We realized DBRs with up to 100 layer pairs by combining GaN:Ge with a nominal doping concentration of 1.6×1020 cm-3 as low-refractive index material with unintentionally doped GaN as high-refractive index layer. Scanning transmission electron microscope images reveal DBR structures with abrupt interfaces and homogenous layer thicknesses in lateral and vertical direction. Reflectance measurements of DBRs designed for the blue and near UV-spectral region show a narrow stopband with a maximum reflectivity of 85% at 418 nm and even 95% at 370 nm. InGaN/GaN multi-quantum well structures grown on top of such DBRs exhibit narrow emission spectra with linewidths below 3 nm and significantly increased emission intensity.

  20. Different pulse pattern generation by frequency detuning in pulse modulated actively mode-locked ytterbium doped fiber laser

    NASA Astrophysics Data System (ADS)

    Chen, He; Chen, Sheng-Ping; Si, Lei; Zhang, Bin; Jiang, Zong-Fu

    2015-10-01

    We report the results of our recent experimental investigation of the modulation frequency detuning effect on the output pulse dynamics in a pulse modulated actively mode-locked ytterbium doped fiber laser. The experimental study shows the existence of five different mode-locking states that mainly depend on the modulation frequency detuning, which are: (a) amplitude-even harmonic/fundamental mode-locking, (b) Q-switched harmonic/fundamental mode-locking, (c) sinusoidal wave modulation mode, (d) pulses bundle state, and (e) noise-like state. A detailed experimental characterization of the output pulses dynamics in each operating mode is presented.

  1. FAST TRACK COMMUNICATION: Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron; Mi, Zhou; Xiao, Jie; Dowben, P. A.; Wang, Lu; Mei, Wai-Ning; Kelber, Jeffry A.

    2010-08-01

    A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ1 +) band dispersion yields an effective mass of 0.05 me for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.

  2. Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

    NASA Technical Reports Server (NTRS)

    Sieg, R. M.; Alterovitz, S. A.; Croke, E. T.; Harrell, M. J.; Tanner, M.; Wang, K. L.; Mena, R. A.; Young, P. G.

    1993-01-01

    Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

  3. Periodic Modulation of the Doping Level in Striped MoS2 Superstructures.

    PubMed

    Zhou, Xiebo; Shi, Jianping; Qi, Yue; Liu, Mengxi; Ma, Donglin; Zhang, Yu; Ji, Qingqing; Zhang, Zhepeng; Li, Cong; Liu, Zhongfan; Zhang, Yanfeng

    2016-03-22

    Although the recently discovered monolayer transition metal dichalcogenides exhibit novel electronic and optical properties, fundamental physical issues such as the quasiparticle bandgap tunability and the substrate effects remain undefined. Herein, we present the report of a quasi-one-dimensional periodically striped superstructure for monolayer MoS2 on Au(100). The formation of the unique striped superstructure is found to be mainly modulated by the symmetry difference between MoS2 and Au(100) and their lattice mismatch. More intriguingly, we find that the monolayer MoS2 is heavily n-doped on the Au(100) facet with a bandgap of 1.3 eV, and the Fermi level is upshifted by ∼0.10 eV on the ridge (∼0.2 eV below the conduction band) in contrast to the valley regions (∼0.3 eV below the conduction band) of the striped patterns after high-temperature sample annealing process. This tunable doping effect is considered to be caused by the different defect densities over the ridge/valley regions of the superstructure. Additionally, an obvious bandgap reduction is observed in the vicinity of the domain boundary for monolayer MoS2 on Au(100). This work should therefore inspire intensive explorations of adlayer-substrate interactions, the defects, and their effects on band-structure engineering of monolayer MoS2. PMID:26913990

  4. Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

    PubMed

    Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

    2016-07-13

    Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices. PMID:27254592

  5. Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, K.; Payette, C.; Dovzhenko, Y.; Koppinen, P.; Petta, J. R.

    2012-02-01

    We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures [1] to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve two dimensional electron gases with low charge densities and high mobilities. We extract an electron temperature of 100 mK in the single quantum dot regime. Double quantum dots fabricated on these heterostructures show clear evidence of single charge transitions [2] as measured in dc transport and charge sensing. [4pt] [1] C. B. Simmons et al, Phys. Rev. Lett. 106, 156804 (2011).[0pt] [2] R. Hanson et al, Rev. Mod. Phys. 79, 1217 (2007).

  6. Inversion of spin dependent photocurrent at Fe3O4/modulation doped GaAs heterointerfaces

    NASA Astrophysics Data System (ADS)

    Shirahata, Y.; Wada, E.; Itoh, M.; Taniyama, T.

    2011-04-01

    We demonstrate inversion of the spin dependent photocurrent across an Fe3O4/modulation doped GaAs interface under optical spin orientation condition. The spin dependent photocurrent for fully epitaxial Fe3O4/GaAs and Fe/GaAs interfaces clearly show the opposite magnetic field dependence, where the spin filtering efficiency for the Fe3O4/GaAs decreases with increasing magnetic field. The results clearly indicate that the spin polarization of the Fe3O4 layer has the opposite sign to that of Fe at the Fermi energy, consistent with theoretical predictions, and the result is a consequence of the atomically flat Fe3O4/GaAs interface we obtained.

  7. Quantum transport in neutron-irradiated modulation-doped heterojunctions. I. Fast neutrons

    SciTech Connect

    Jin, W.; Zhou, J.; Huang, Y.; Cai, L.

    1988-12-15

    We have investigated the characteristics of low-temperature quantum transport in Al/sub x/Ga/sub 1-//sub x/As/GaAs modulation-doped heterojunctions irradiated by fast neutrons of about 14 MeV energy. The concentration and the mobility of the two-dimensional electron gas (2D EG) under low magnetic fields decrease with increase in the concentrations of scatterers, such as ionized impurities, lattice defects, and interface roughness. On the other hand, under strong magnetic fields, the Hall plateau broadening associated with the Landau localized states, and the Shubnikov--de Hass (SdH) oscillation enhancement associated with the Landau extended states, increase markedly after fast-neutron irradiation.

  8. Magnetic field induced indirect gap in a modulation doped quantum well

    NASA Astrophysics Data System (ADS)

    Whittaker, D. M.; Fisher, T. A.; Simmonds, P. E.; Skolnick, M. S.; Smith, R. S.; Taylor, L. L.; Bass, S. J.

    1992-02-01

    We report the first experimental evidence for the indirect fundamental band-gap developed when an in-plane magnetic field is applied to a wide, modulation-doped quantum well. In such structures, band bending may cause the lowest energy electron and hole states to be spatially separated, which leads to an induced indirect gap proportional to the field. The corresponding photoluminescence peak undergoes a large, roughly quadratic shift with field, a consequence of the behaviour of the allowed transitions involving thermalised holes and electrons with finite k. This characteristic strong diamagnetic shift is observed in spectra from both asymmetric AlGaAs/InGaAs/GaAs strained layer structures and a very wide symmetric InGaAs/InP lattice matched well. The experimental results are shown to be in good agreement with realistic self consistent calculations of the band-structure.

  9. Quantum transport in neutron-irradiated modulation-doped heterojunctions. II. Thermal neutrons

    SciTech Connect

    Jin, W.; Zhou, J.; Huang, Y.; Cai, L.

    1988-12-15

    We have investigated the characteristics of the low-temperature quantum transport Al/sub x/Ga/sub 1-//sub x/As/GaAs modulation-doped heterojunctions irradiated by thermal neutrons of about 0.025 eV energy. Time-dependent effects related to nuclear radiation such as ..beta../sup -/ decay and ..gamma.. radiation are discussed in detail. The concentration and the mobility of the two-dimensional electron gas (2D EG) under low magnetic fields, the Hall plateau broadening, and the Shubnikov--de Haas (SdH) oscillation enhancement under strong magnetic fields all increase immediately after the irradiation, and then relax for long times. Above all, parallel conduction without illumination is first observed by us with a higher flux of thermal neutrons.

  10. Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures.

    PubMed

    Lim, C B; Ajay, A; Bougerol, C; Lähnemann, J; Donatini, F; Schörmann, J; Bellet-Amalric, E; Browne, D A; Jiménez-Rodríguez, M; Monroy, E

    2016-04-01

    This paper assesses the effects of Si doping on the properties of nonpolar m-plane GaN/AlGaN quantum wells (QWs) designed for intersubband (ISB) absorption in the far-infrared spectral range. For doping levels up to 3 × 10(12) cm(-2), structural analysis reveals uniform QWs with abrupt interfaces and no epitaxially induced defects. Cathodoluminescence spectroscopy confirms the homogeneity of the multiple QWs along the growth direction. Increasing the doping density in the QWs from 1 × 10(11) cm(-2) to 3 × 10(12) cm(-2) induces a broadening of the photoluminescence as well as a reduction of the exciton localization energy in the alloy. Also, enhancement of the ISB absorption is observed, along with a blue shift and widening of the absorption peak. The magnitude of the ISB absorption saturates for doping levels around 1 × 10(12) cm(-2), and the blue shift and broadening increase less than theoretically predicted for the samples with higher doping levels. This is explained by the presence of free carriers in the excited electron level due to the increase of the Fermi level energy. PMID:26902654

  11. Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, C. B.; Ajay, A.; Bougerol, C.; Lähnemann, J.; Donatini, F.; Schörmann, J.; Bellet-Amalric, E.; Browne, D. A.; Jiménez-Rodríguez, M.; Monroy, E.

    2016-04-01

    This paper assesses the effects of Si doping on the properties of nonpolar m-plane GaN/AlGaN quantum wells (QWs) designed for intersubband (ISB) absorption in the far-infrared spectral range. For doping levels up to 3 × 1012 cm-2, structural analysis reveals uniform QWs with abrupt interfaces and no epitaxially induced defects. Cathodoluminescence spectroscopy confirms the homogeneity of the multiple QWs along the growth direction. Increasing the doping density in the QWs from 1 × 1011 cm-2 to 3 × 1012 cm-2 induces a broadening of the photoluminescence as well as a reduction of the exciton localization energy in the alloy. Also, enhancement of the ISB absorption is observed, along with a blue shift and widening of the absorption peak. The magnitude of the ISB absorption saturates for doping levels around 1 × 1012 cm-2, and the blue shift and broadening increase less than theoretically predicted for the samples with higher doping levels. This is explained by the presence of free carriers in the excited electron level due to the increase of the Fermi level energy.

  12. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    SciTech Connect

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  13. Novel mesoporous P-doped graphitic carbon nitride nanosheets coupled with ZnIn2S4 nanosheets as efficient visible light driven heterostructures with remarkably enhanced photo-reduction activity.

    PubMed

    Chen, Wei; Liu, Tian-Yu; Huang, Ting; Liu, Xiao-Heng; Yang, Xu-Jie

    2016-02-14

    In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and separation of charge carrier pairs. More importantly, these P-C3N4/ZnIn2S4 heterostructures have been proven to be highly efficient visible light responsive photocatalysts for photo-reduction, and meanwhile exhibit excellent photo-stability during recycling runs. The sufficient evidence reveals that the significantly improved photocatalytic performance is mainly attributed to the more efficient charge carrier separation based on the construction of a close heterogeneous interface. This work may provide new insights into the utilization of P-C3N4/ZnIn2S4 nanocomposites as visible light driven photocatalysts for comprehensive organic transformations in the field of fine chemical engineering. PMID:26815611

  14. - and Photo-Modulation Studies of Semiconductors: I. Diluted Magnetic Semiconductors. I. Gallium-Arsenide - - Arsenide, Zinc-Selenide and Cadmium - Manganese - Telluride Heterostructures.

    NASA Astrophysics Data System (ADS)

    Lee, Yung-Rai

    1987-09-01

    The reflectivity and transmission spectra of the diluted magnetic semiconductors (DMS) were investigated using piezo- and photo-modulation techniques. The spectra for Cd_{rm 1-x}Mn _{rm x}Te and Zn _{rm 1-x}Mn _{rm x}Te show a characteristic exciton A of the zinc blende DMS. The energy E _{A}, linear in x, is given by 1.595 + 1.592x (eV) for Cd_{rm 1-x}Mn_{rm x} Te and 2.376 + 0.820x (eV) for Zn_ {rm 1-x}Mn_{ rm x}Te at liquid helium temperature, yielding E _{A} = 3.187(3.196) eV for the "hypothetical" zinc blende MnTe. For the wurtizite DMS's, such as Cd_{rm 1-x} Mn_{rm x}Se, signatures characteristic of the crystal field split valence band--the A and the B exciton--are observed for electric vector {rm (vec{E}) } perpendicular and parallel to the c -axis, respectively. For x <=q 0.35, Zn _{rm 1-x}Mn _{rm x}Se has the zinc blende structure; correspondingly only one exciton feature appears in the spectrum. For x > 0.35, two exciton features are observed consistent with the wurtzite structure of Zn_{rm 1-x}Mn _{rm x}Se for higher x. A signature with a sign opposite to that of free exciton is observed at ~ 2.2 eV for Cd _{rm 1-x}Mn _{rm x}Te and Cd _{rm 1-x}Mn_ {rm x}Se for x > 0.4 and for all x in Zn_{rm 1 -x}Mn_{rm x} Te and Zn_{rm 1-x} Mn_{rm x}Se. The feature, identified with a Mn^{2+} internal transition, shows no x dependence. In addition, we have observed signatures associated with imperfections in the crystals. In the magnetoreflectivity measurements, the Mn^{2+} transition fails to show any observable Zeeman shift or splitting when examined in magnetic fields up to 15.58 T. In contrast, the free exciton exhibits huge Zeeman splittings, a consequence of the large Mn^{2+}-band electron exchange interaction. These observations favor the assignment of ^6 A_1(^6 S) to ^4 T _1(^4 G) to the 2.2 eV Mn ^{2+} transition where the levels are associated with the crystal-field-split 3 d ^5 manifold of Mn^{2+ }. We have also applied the piezo- and photo-modulation

  15. Nonlinear dynamics of Ytterbium-doped fiber laser Q-switched using acousto-optical modulator

    NASA Astrophysics Data System (ADS)

    Barmenkov, Y. O.; Kir'yanov, A. V.; Andres, M. V.

    2014-12-01

    A comprehensive experimental analysis of the dynamics of an ytterbium-doped fiber laser actively Q-switched (QS) using an intracavity acousto-optical modulator (AOM) is presented. It is shown that type of QS pulsing strongly depends on AOM repetition rate and pump power. In particular, at low repetition rates, including zero-rate, and at relatively high pump powers peculiar QS pulsing, switched by stimulated Brillouin scattering (SBS), is established in the laser. The cause of such kind of pulsing is the SBS-process boosted by spurious narrow-line CW lasing that arises in auxiliary low-Q cavity formed by an output coupler (in our experiments - fiber Bragg gratings) and weak reflections from blocked AOM. The parameters' area where this regime occurs is limited by certain values of pump power and AOM repetition rate. At increasing AOM repetition rate or decreasing pump power spurious CW lasing is not attained in the system; consequently, the SBS type of QS fades, while "conventional" QS (CQS) lasing is established in the system and remains. However CQS pulsing strongly suffers the nonlinear-dynamics effects: depending on AOM repetition rate and pump power the laser switches to common P1, P2, or P3 attractors, when QS pulses arise at sub-harmonics of AOM repetition rate, or to the specific transient regimes between them, or to chaotic operation. These and other sides (e.g. pulse jittering) of operation of the QS ytterbium-doped fiber laser with AOM are under scope of the present review as they have big interest for practical applications.

  16. Effect of interaction between periodic δ-doping in both well and barrier layers on modulation of superlattice band structure

    NASA Astrophysics Data System (ADS)

    Xu, Huaizhe; Yan, Qiqi; Wang, Tianmin

    2007-08-01

    The modulation of superlattice band structure via periodic δ-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the δ-function potentials in the well layers and those in the barrier layers on SL band structure have been revealed. It is pointed out that the energy dispersion relation Eq. (3) given in [G. Ihm, S.K. Noh, J.I. Lee, J.-S. Hwang, T.W. Kim, Phys. Rev. B 44 (1991) 6266] is an incomplete one, as the interaction between periodic δ-doping in both well and barrier layers had been overlooked. Finally, we have shown numerically that the electron states of a GaAs/Ga0.7Al0.3As superlattice can be altered more efficiently by intelligent tuning the two δ-doping's positions and heights.

  17. Multifunctional Oxide Heterostructures

    SciTech Connect

    Tsymbal, E Y; Dagotto, Elbio R; Eom, Professor Chang-Beom; Ramesh, Ramamoorthy

    2012-01-01

    This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

  18. Spatial modulation spectroscopy for imaging and quantitative analysis of single dye-doped organic nanoparticles inside cells

    NASA Astrophysics Data System (ADS)

    Devadas, Mary Sajini; Devkota, Tuphan; Guha, Samit; Shaw, Scott K.; Smith, Bradley D.; Hartland, Gregory V.

    2015-05-01

    Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer.Imaging of non-fluorescent nanoparticles in complex biological environments, such as the cell cytosol, is a challenging problem. For metal nanoparticles, Rayleigh scattering methods can be used, but for organic nanoparticles, such as dye-doped polymer beads or lipid nanoparticles, light scattering does not provide good contrast. In this paper, spatial modulation spectroscopy (SMS) is used to image single organic nanoparticles doped with non-fluorescent, near-IR croconaine dye. SMS is a quantitative imaging technique that yields the absolute extinction cross-section of the nanoparticles, which can be used to determine the number of dye molecules per particle. SMS images were recorded for particles within EMT-6 breast cancer cells. The measurements allowed mapping of the nanoparticle location and the amount of dye in a single cell. The results demonstrate how SMS can facilitate efforts to optimize dye-doped nanoparticles for effective photothermal therapy of cancer. Electronic supplementary information (ESI

  19. Modulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation

    NASA Astrophysics Data System (ADS)

    Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

    2012-12-01

    Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm2 V-1 s-1 in intrinsic portion and ~2,500 cm2 V-1 s-1 in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p-n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p-n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film.

  20. Modulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation.

    PubMed

    Yan, Kai; Wu, Di; Peng, Hailin; Jin, Li; Fu, Qiang; Bao, Xinhe; Liu, Zhongfan

    2012-01-01

    Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm(2) V(-1) s(-1) in intrinsic portion and ~2,500 cm(2) V(-1) s(-1) in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p-n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p-n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film. PMID:23232410

  1. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure.

    PubMed

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-01-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories. PMID:25909177

  2. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xi-Xiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-04-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  3. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  4. Charge modulation of magnetization in X-doped MgO nanotube clusters (X=C, N)

    NASA Astrophysics Data System (ADS)

    Wang, Su-Fang; Chen, Li-Yong; Zhang, Tao; Xie, You

    2016-02-01

    First-principles calculations based on density functional theory are performed to study the magnetic and electronic properties of X-doped 8×7 MgO nanotube clusters (X=C, N). The N dopant easily occupies the O-site at the edge of MgO nanotube, embracing neutral or charged defect state, and induces notable magnetization in N-doped MgO tubular cluster. More important, this p-electron magnetization can be significantly modulated as the charged state of the defect changes. Regarding C doping, impurity atom readily substitute the Mg atom located at the edge of MgO nanotube to form neutral defect, and net magnetization is found to be zero. The calculated electron densities of states show that the O-site N doping at the edge greatly narrows or even destroys band-gap, while it enlarges somewhat for the Mg-site C doping at the edge. The results are likely to stimulate a promising class of materials for various applications ranging from spintronics to magneto-optics.

  5. Photodetectors based on heterostructures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Nabet, Bahram; Cola, Adriano; Cataldo, Andrea; Chen, Xiying; Quaranta, Fabio

    2002-09-01

    In this work we describe a family of optical devices based on heterojunction and heterodimensional structures and we investigate their static and dynamic properties. Such devices are good candidates, due to their high performance, for utilization as the sensing element for the realization of sensors in the fields of telecommunications, remote sensing, LIDAR and medical imaging. First, we present a Heterostructure Metal-Semiconductor-Metal (HMSM) photodetectors that employ a uniformly doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of the photogenerated electrons. In this first family of devices, two doping levels are compared showing the direct effect of the aiding field due to modulation doping. Subsequently, we analyze a novel Resonant-Cavity-Enhanced (RCE) HMSM photodetector in which a Distributed Bragg Reflector (DBR) is employed in order to reduce the thickness of the absorption layer thus achieving good responsivity and high speed as well as wavelength selectivity. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and on-wafer frequency domain measurements point out the better performance of this last family of detectors, as they can operate in tens of Giga-Hertz range with low dark current and high responsivity. Particularly, the I-V curves show a very low dark current (around 10 picoamps at operative biases); C-V measurements highlight the low geometrical capacitance values; the photocurrent spectrum shows a clear peak at 850 nm wavelength, while time response measurements give a 3 dB bandwidth of about 30 GHz. Small signal model based on frequency domain data is also extracted in order to facilitate future photoreceiver design. Furthermore, two-dimensional numerical simulations have been carried out in order to predict the electrical properties of these detectors. Combination of very low dark current and

  6. Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure

    NASA Astrophysics Data System (ADS)

    Méndez-García, Víctor-Hugo; Shimomura, S.; Gorbatchev, A. Yu.; Cruz-Hernández, E.; Vázquez-Cortés, D.

    2015-09-01

    The effects of doping with silicon (Si) AlGaAs layers grown by molecular beam epitaxy on GaAs (6 3 1)-oriented substrates as a function of the arsenic pressure (PAs) is presented and compared with layers grown on (1 0 0) oriented substrates. The surface texture of the AlGaAs (6 3 1) films is composed by nanogrooves, whose dimensions depend on PAs. On the contrary, the MBE growth on the (1 0 0) plane resulted on rough surfaces, without evidence of formation of terraces. Mobility and carrier density of AlGaAs:Si layers grown on substrates (6 3 1) were studied as a function of PAs. The doping type conversion from p-type to n-type as a function of the As pressure is corroborated for high index samples. All the films grown on (1 0 0) exhibited silicon n-type doping. These observations were related with the amphotericity of Si, where it acts as a donor impurity occupying Al or Ga-sites or as an acceptor when it takes an As-site, depending on the competition that the Si atoms encounters with As for any of these sites. The acceptor and donor lines close to the AlGaAs transition observed by photoluminescence spectroscopy (PL) were affected by the incorporation of Si. When increasing PAs the energy of the main PL peak is redshifted for n-type AlGaAs layers, but it is shifted back towards high energy once the conduction type conversion takes place. X-ray diffraction patterns revealed high crystalline quality for samples grown at the highest PAs.

  7. Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power

    NASA Astrophysics Data System (ADS)

    Chaâbani, W.; Melliti, A.; Maaref, M. A.; Testelin, C.; Lemaître, A.

    2016-07-01

    The optical properties of p-doped and annealed InAs/GaAs quantum dots (QDs) was investigated by photoluminescence (PL) as a function of temperature and excitation power density (Pexc). At low-T, PL spectra of rapid thermal annealing (RTA) and p-modulation doped QDs show an energy blueshift and redshift, respectively. A superlinear dependence of integrated PL intensity on Pexc at high-T was found only for undoped QD. The superlinearity was suppressed by modulation-doping and RTA effects. A linear dependence of IPL at all temperatures and a decrease of the carrier-carrier Coulomb interaction at high-T was found after RTA.

  8. Novel mesoporous P-doped graphitic carbon nitride nanosheets coupled with ZnIn2S4 nanosheets as efficient visible light driven heterostructures with remarkably enhanced photo-reduction activity

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Liu, Tian-Yu; Huang, Ting; Liu, Xiao-Heng; Yang, Xu-Jie

    2016-02-01

    In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and separation of charge carrier pairs. More importantly, these P-C3N4/ZnIn2S4 heterostructures have been proven to be highly efficient visible light responsive photocatalysts for photo-reduction, and meanwhile exhibit excellent photo-stability during recycling runs. The sufficient evidence reveals that the significantly improved photocatalytic performance is mainly attributed to the more efficient charge carrier separation based on the construction of a close heterogeneous interface. This work may provide new insights into the utilization of P-C3N4/ZnIn2S4 nanocomposites as visible light driven photocatalysts for comprehensive organic transformations in the field of fine chemical engineering.In this report, we rationally designed and fabricated P-C3N4/ZnIn2S4 nanocomposites by in situ immobilizing ZnIn2S4 nanosheets onto the surface of mesoporous P-doped graphite carbon nitrogen (P-C3N4) nanosheets in a mixed solvothermal environment; their application to the photoreduction of 4-nitroaniline was used to estimate the photocatalytic performance. Different to the template route, here the mesoporous P-C3N4 nanosheets were prepared with a template-free strategy. The as-fabricated P-C3N4/ZnIn2S4 nanocomposites were systematically characterized by analyzing the phase structure, chemical components, electronic and optical properties and

  9. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition.

    PubMed

    Kim, S; Russell, M; Henry, M; Kim, S S; Naik, R R; Voevodin, A A; Jang, S S; Tsukruk, V V; Fedorov, A G

    2015-09-28

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an "n-p-n" junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 10(18) e(-) per cm(2)). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 10(19) e(-) per cm(2) results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, "direct-write" functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. PMID:26302897

  10. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    SciTech Connect

    Yi, Wei E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko E-mail: MSokolich@hrl.com; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad S.; Kouwenhoven, Leo P.; Marcus, Charles M.

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.

  11. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  12. Distortion of self-induced-transparency solitons as a result of self-phase modulation in ion-doped fibers

    NASA Astrophysics Data System (ADS)

    Kozlov, Victor V.; Fradkin, Évald E.

    1995-11-01

    The temporal envelope profile and the phase of a steady-state pulse propagating through a resonant medium in the presence of nonresonant nonlinearity are derived. The formation of solitonlike pulses takes place as a result of the balance of the self-phase modulation generated by nonresonant nonlinearity and the nonlinear resonant group-velocity dispersion induced by the self-induced-transparency effect in a resonant medium. Self-phase-modulation action leads to distortion of the pulse when its power and inverse duration exceed the critical values Pcr and tau -1cr . We show the destructive role of self-phase modulation in the case of self-induced-transparency pulse generation in a laser with erbium-doped fiber as an intracavity coherent absorber.

  13. Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

    NASA Astrophysics Data System (ADS)

    Borsosfoldi, Z.; Rahman, M.; Larkin, I. A.; Long, A. R.; Davies, J. H.; Weaver, J. M. R.; Holland, M. C.; Williamson, J. G.

    1995-06-01

    We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at ``high'' temperatures have been two-terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only shown charging effects at temperatures of 4 K or less. We have fabricated ultrasmall quantum dots on modulation doped heterostructures where the two-dimensional electron gas is less than 30 nm from the surface. Dots with lithographic diameter 150 nm show Coulomb oscillations up to temperatures of 7 K. Higher temperature operation allows potential applications to be considered without the need, for example, of a dilution fridge.

  14. Quantitative characterization of modulation-doped strained quantum wells through line-shape analysis of room-temperature photoluminescence spectra

    NASA Astrophysics Data System (ADS)

    Brierley, Steven K.

    1993-08-01

    Room-temperature photoluminescence (PL) was presented as a nondestructive characterization method for modulation-doped strained quantum well epitaxial structures suited for pseudomorphic high electron mobility transistors (pHEMTs). Though the spectra showed broad peaks, in contrast to the sharp, well-defined peaks in low-temperature PL spectra, quantitative energy data was obtained through fitting a phenomenological line-shape model to the spectra. This model included the four transitions linking the first two electron subbands and the first two heavy-hole subbands, which can take credit for all of the peaks noted in pHEMT epitaxial configurations at realistic doping levels. The obtained results revealed that by using a simple line-shape model to the room-temperature PL spectrum of a pHEMT, a substantial amount of detailed structural and electronic data can be acquired regarding the quantum well.

  15. Bandgap modulation and hydrogen storage with Cr-doped BN sheets

    NASA Astrophysics Data System (ADS)

    Ma, Shengqian

    2015-08-01

    The theoretical calculations indicate that the metal-doped boron nitride (BN) sheets are potential materials to store the hydrogen and tune the bandgap. It is all known that the BN sheet is a nonmagnetic wide-bandgap semiconductor. Using density function theory (DFT), the lattice parameters of Cr-doped BN sheets are optimized, which are still kept on two-dimensional (2D) planar geometry, and the bandgap and H2 storage are studied. The simulation results show that the H2 molecule can be easily absorbed by Cr-doped N in BN sheet. As the adsorption energy was greatly decreasing with the increasing number of Cr-doped N, B had an affinity for adsorption of H2. With the increase of Cr doping, the bandgap of Cr-doped BN sheet is decreasing. The bandgap decreases from 4.705 eV to 0.08 eV. So Cr-doped BN sheet is a promising material in storing H2 and tuning the bandgap.

  16. Trion and exciton dephasing measurements in modulation-doped quantum wells: A probe for trion and carrier localization

    NASA Astrophysics Data System (ADS)

    Brinkmann, D.; Kudrna, J.; Gilliot, P.; Hönerlage, B.; Arnoult, A.; Cibert, J.; Tatarenko, S.

    1999-08-01

    To investigate the properties of a two-dimensional carrier gas at intermediate densities, we perform picosecond transient four-wave mixing experiments on trions (charged excitons) and neutral excitons in modulation p-doped CdTe/Cd1-x-yMgxZnyTe quantum wells. The determination of trion and exciton dephasing rates reveals a localization of both trions and holes in potential fluctuations induced by the ionized remote acceptors. We demonstrate that trions can be efficiently used as a charged optical probe sensitive to electrostatic potential fluctuations which are imperceptible for neutral excitons.

  17. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.

    PubMed

    Boland, Jessica L; Conesa-Boj, Sonia; Parkinson, Patrick; Tütüncüoglu, Gözde; Matteini, Federico; Rüffer, Daniel; Casadei, Alberto; Amaduzzi, Francesca; Jabeen, Fauzia; Davies, Christopher L; Joyce, Hannah J; Herz, Laura M; Fontcuberta i Morral, Anna; Johnston, Michael B

    2015-02-11

    Reliable doping is required to realize many devices based on semiconductor nanowires. Group III-V nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not compromised by the inclusion of dopants. Here we show that GaAs nanowires can be n-type doped with negligible loss of electron mobility. Molecular beam epitaxy was used to fabricate modulation-doped GaAs nanowires with Al0.33Ga0.67As shells that contained a layer of Si dopants. We identify the presence of the doped layer from a high-angle annular dark field scanning electron microscopy cross-section image. The doping density, carrier mobility, and charge carrier lifetimes of these n-type nanowires and nominally undoped reference samples were determined using the noncontact method of optical pump terahertz probe spectroscopy. An n-type extrinsic carrier concentration of 1.10 ± 0.06 × 10(16) cm(-3) was extracted, demonstrating the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was also found to be high at 2200 ± 300 cm(2) V(-1) s(-1) and importantly minimal degradation was observed compared with undoped reference nanowires at similar electron densities. In addition, modulation doping significantly enhanced the room-temperature photoconductivity and photoluminescence lifetimes to 3.9 ± 0.3 and 2.4 ± 0.1 ns respectively, revealing that modulation doping can passivate interfacial trap states. PMID:25602841

  18. Cavity-less on-chip optomechanics using excitonic transitions in semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Okamoto, Hajime; Watanabe, Takayuki; Ohta, Ryuichi; Onomitsu, Koji; Gotoh, Hideki; Sogawa, Tetsuomi; Yamaguchi, Hiroshi

    2015-10-01

    The hybridization of semiconductor optoelectronic devices and nanomechanical resonators provides a new class of optomechanical systems in which mechanical motion can be coupled to light without any optical cavities. Such cavity-less optomechanical systems interconnect photons, phonons and electrons (holes) in a highly integrable platform, opening up the development of functional integrated nanomechanical devices. Here we report on a semiconductor modulation-doped heterostructure-cantilever hybrid system, which realizes efficient cavity-less optomechanical transduction through excitons. The opto-piezoelectric backaction from the bound electron-hole pairs enables us to probe excitonic transition simply with a sub-nanowatt power of light, realizing high-sensitivity optomechanical spectroscopy. Detuning the photon energy from the exciton resonance results in self-feedback cooling and amplification of the thermomechanical motion. This cavity-less on-chip coupling enables highly tunable and addressable control of nanomechanical resonators, allowing high-speed programmable manipulation of nanomechanical devices and sensor arrays.

  19. Cavity-less on-chip optomechanics using excitonic transitions in semiconductor heterostructures.

    PubMed

    Okamoto, Hajime; Watanabe, Takayuki; Ohta, Ryuichi; Onomitsu, Koji; Gotoh, Hideki; Sogawa, Tetsuomi; Yamaguchi, Hiroshi

    2015-01-01

    The hybridization of semiconductor optoelectronic devices and nanomechanical resonators provides a new class of optomechanical systems in which mechanical motion can be coupled to light without any optical cavities. Such cavity-less optomechanical systems interconnect photons, phonons and electrons (holes) in a highly integrable platform, opening up the development of functional integrated nanomechanical devices. Here we report on a semiconductor modulation-doped heterostructure-cantilever hybrid system, which realizes efficient cavity-less optomechanical transduction through excitons. The opto-piezoelectric backaction from the bound electron-hole pairs enables us to probe excitonic transition simply with a sub-nanowatt power of light, realizing high-sensitivity optomechanical spectroscopy. Detuning the photon energy from the exciton resonance results in self-feedback cooling and amplification of the thermomechanical motion. This cavity-less on-chip coupling enables highly tunable and addressable control of nanomechanical resonators, allowing high-speed programmable manipulation of nanomechanical devices and sensor arrays. PMID:26477487

  20. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Roberts, J. W.; Chalker, P. R.; Lee, K. B.; Houston, P. A.; Cho, S. J.; Thayne, I. G.; Guiney, I.; Wallis, D.; Humphreys, C. J.

    2016-02-01

    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm-3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm-2 to -6.60 × 1012 cm-2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

  1. Spatial modulation of low-frequency spin fluctuations in hole-doped La{sub 2}CuO{sub 4}

    SciTech Connect

    Yamada, K.; Lee, C.H.; Wada, J.; Kurahashi, K.; Kimura, H.; Endoh, Y.; Hosoya, S.; Shirane, G.; Birgeneau, R.J.; Kastner, M.A.

    1996-12-01

    Systematic neutron scattering measurements have been performed on the Sr-doped La(2-x)Sr(x) CuO4 to study the doping dependence of spatially modulated dynamical spin correlations or so-called incommensurate spin fluctuations. The modulated spin correlations appears beyond x approx. 0.05 which is close to the lower boundary of the superconducting phase. First evidence was observed for the linear relation between the degree of spatial modulation or the incommensurability delta(x) and the maximum Tc at x. We present a universal curve for delta(x) by adding data from other La2CuO4 systems such as oxygen-doped superconductors, oxygen-reduced or Zn-substituted non-superconductors and La(1.6-x)Nd(0.4)Sr(x)CuO4.

  2. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

    2015-09-01

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated

  3. Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Haugland, E. J.; Alterovitz, S. A.; Young, P. G.; Bibyk, S. B.; Ringel, S. A.

    1995-01-01

    The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.

  4. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    PubMed

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications. PMID:26198203

  5. Enhancement of thermoelectric performance in composite materials through locally-modulated doping

    NASA Astrophysics Data System (ADS)

    Adams, Michael J.; Jin, Hyungyu; Heremans, Joseph P.

    2015-03-01

    Composites of organic or inorganic constituents are often considered as a way to yield high thermoelectric figure of merit. The limit of this approach is set by the effective medium theory, which demonstrates formally that a composite of two materials A and B cannot have higher figure of merit than the highest of either A or B, in the absence of interaction between A and B. In this work, we show that this limit can be lifted by introducing into a host material a second phase that behaves differently vis-a-vis electrons than vis-a-vis phonons. This phase consists of electrically and thermally insulating islands of material that locally dope the semiconducting host. Doped material near the islands provides electrically conductive volumes for charge carriers. Phonons, unaffected by local doping, are scattered by the islands. Thermopower is less affected by the doped regions than electrical conductivity, by an intrinsic mathematical property of the effective medium theory. We employ this concept in Bi1-xSbx alloys and in p-type (Bi1-xSbx)2 Te3 compounds, which are known as good thermoelectric materials at cryogenic and room temperatures, respectively. Experimental transport data and the local microscopic characterizations of the samples are presented. Supported by DOE US-China Clean Energy Research Center SubK 3002041929, and by AFOSR MURI FA9550-10-1-0533.

  6. Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures

    NASA Technical Reports Server (NTRS)

    Schacham, S. E.; Mena, R. A.; Haugland, E. J.; Alterovitz, S. A.

    1995-01-01

    A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.

  7. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  8. Ion-doping as a strategy to modulate hydroxyapatite nanoparticle internalization

    NASA Astrophysics Data System (ADS)

    Zhao, Z.; Espanol, M.; Guillem-Marti, J.; Kempf, D.; Diez-Escudero, A.; Ginebra, M.-P.

    2016-01-01

    Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co-addition. We synthesized NPs under similar conditions to allow comparison of results and different aspects in addition to assessing the effect of the doping ion(s) were investigated: (1) the effect of performing the cell culture study on citrate-dispersed NPs and on agglomerated NPs, (2) the effect of adding/excluding 10% of foetal bovine serum (FBS) in the cell culture media and (3) the type of cell, i.e. MG-63 versus rat mesenchymal stem cells (rMSCs). The results clearly demonstrated that Mg-doping had a major effect on MG-63 cells with high cytotoxicity but not to rMSCs. This was a very important finding because it proved that doping could be a tool to modify NP internalization. The results also suggest that NP surface charge had a large impact on MG-63 cells and prevents their internalization if it is too negative--this effect was less critical for rMSCs.Although it is widely acknowledged that ionic substitutions on bulk hydroxyapatite substrates have a strong impact on their biological performance, little is known of their effect on nanoparticles (NPs) especially when used for gene transfection or drug delivery. The fact that NPs would be internalized poses many questions but also opens up many new possibilities. The objective of the present work is to synthesize and assess the effect of a series of hydroxyapatite-like (HA) NPs doped with various ions on cell behavior, i.e. carbonate, magnesium and co

  9. Spin and charge modulations in a single-hole-doped Hubbard ladder: Verification with optical lattice experiments

    NASA Astrophysics Data System (ADS)

    Zhu, Zheng; Weng, Zheng-Yu; Ho, Tin-Lun

    2016-03-01

    We show that pronounced modulations in spin and charge densities can be induced by the insertion of a single hole in an otherwise half-filled two-leg Hubbard ladder. Accompanied with these modulations is a loosely bound structure of the doped charge with a spin-1/2, in contrast to the tightly bound case where such modulations are absent. These behaviors are caused by the interference of the Berry phases associated with a string of flipped spins (or "phase strings") left behind as a hole travels through a spin bath with a short-range antiferromagnetic order. The key role of the phase strings is also reflected in how the system responds to increasing spin polarization and the on-site repulsion, addition of a second hole, and increasing asymmetry between intra- and interchain hopping. Remarkably, all these properties persist down to ladders as short as ˜10 sites, as the smoking gun of the phase-string effect. They can therefore be studied in cold-atom experiments using the recently developed fermion microscope.

  10. Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-xN/GaN heterostructures: A possible explanation of defect insensitivity

    NASA Astrophysics Data System (ADS)

    Mouti, Anas; Rouvière, Jean-Luc; Cantoni, Marco; Carlin, Jean-Francois; Feltin, Eric; Grandjean, Nicolas; Stadelmann, Pierre

    2011-05-01

    Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-xN/GaN heterostructures. The atomic core rings of edge-type dislocations are shown to lie across highly antisymmetric elemental environments, and the indium-rich pit centers of mixed dislocation are found to lie on the tensile side of their atomic core ring. The observed composition fluctuations around pure-edge dislocations are compared with an elastostatic free energy model calculation and a good qualitative and quantitative agreement is obtained. Hydrostatic stress is shown to be their principal cause: Tensile stress regions are indium rich and compressive stress regions are aluminum rich. We show that the stress field of a mixed dislocation can impact the composition of the alloy more than a hundred nanometers away from its core. Indium core segregation on pure-screw threading dislocation is also evidenced and explained by the model, as shear stress is also expected to affect composition. Furthermore, threading dislocations are shown to bend less in the AlxIn1-xN alloy than in GaN, suggesting that they are “pinned” by stress-induced fluctuations. Such concentration modulations can have an important impact on optical and electrical properties of Group-III nitride devices that generally contain a high dislocation density (in the 108 to 1010 cm-2 range). We propose that stress-induced composition modulation could be the origin of defect insensitivity in indium-containing nitride ternary alloys.

  11. Modulation of the electron transport properties in graphene nanoribbons doped with BN chains

    SciTech Connect

    Liu, Wu; Zhang, Kaiwang Zhong, JianXin; Wang, Ru-Zhi; Liu, Li-Min

    2014-06-15

    Using density-functional theory and the non-equilibrium Green's function method, the electron transport properties of zigzag graphene nanoribbons (ZGNRs) doped with BN chains are studied by systematically calculating the energy band structure, density of states and the transmission spectra for the systems. The BN chains destroyed the electronic transport properties of the ZGNRs, and an energy gap appeared for the ZGNRs, and displayed variations from a metal to a wide-gap semiconductor. With an increase in the number of BN chains, the band gap increased gradually in the band structure and the transmission coefficient decreased near the Fermi surface. Additionally, the doping position had a significant effect on the electronic properties of the ZGNRs.

  12. Designing heterostructures with higher-temperature superconductivity

    NASA Astrophysics Data System (ADS)

    Le Hur, Karyn; Chung, Chung-Hou; Paul, I.

    2011-07-01

    We propose to increase the superconducting transition temperature Tc of strongly correlated materials by designing heterostructures which exhibit a high pairing energy as a result of magnetic fluctuations. More precisely, applying an effective theory of the doped Mott insulator, we envisage a bilayer Hubbard system where both layers exhibit intrinsic intralayer (intraband) d-wave superconducting correlations. Introducing a finite asymmetry between the hole densities of the two layers such that one layer becomes slightly more underdoped and the other more overdoped, we show a visible enhancement of Tc compared to the optimally doped isolated layer. Using the bonding and antibonding band basis, we show that the mechanism behind this enhancement of Tc is the interband pairing correlation mediated by the hole asymmetry which strives to decrease the paramagnetic nodal contribution to the superfluid stiffness. For two identical layers, Tc remains comparable to that of the isolated layer until moderate values of the interlayer single-particle tunneling term. These heterostructures shed new light on fundamental questions related to superconductivity.

  13. Enhanced electrical transport by texture modulation and co-doping for Ca3Co4O9+δ materials

    NASA Astrophysics Data System (ADS)

    Liu, Z. Y.; Zhang, F. P.; Zhang, J. X.; Zhang, X.; Lu, Q. M.; Yang, X. Y.

    The powders as well as the texture modulated Ca2.8BaxPryCo4O9+δ (x, y = 0, 0.05, 0.1, 0.15 and 0.2) bulk materials are prepared via solid state reaction, sol-gel and spark plasma sintering method. The powder and bulk materials are analyzed with regard to their phase composition and microscopic character by X-ray diffraction (XRD) and scanning electron microscope (SEM). The thermoelectric transport properties of the bulk materials are measured and investigated. The results show that the plate-like powders with uniform particle size tend to align regularly rather than the powders with anomaly shape and particle size distribution by spark plasma sintering method. The bulk materials co-doped by elements with lower electronegativity tend to form better texture rather than that of the bulk materials co-doped by elements with higher electronegativity via spark plasma sintering method. The resistivities and Seebeck coefficients are in negative accordance to the bulk material texture as a whole, and the carrier transport mechanism is not influenced. The electrical performance is tuned with optimized power factor 462 μW m-1 K-2 at 973 K for Ca2.8BaxPryCo4O9+δ (x = y = 0.1) bulk materials.

  14. Field-Effect Modulation of Ambipolar Doping and Domain Wall Band Alignment in P-type Vanadium Dioxide Nanowires

    NASA Astrophysics Data System (ADS)

    Hou, Yasen; Peng, Xingyue; Yang, Yiming; Yu, Dong

    The sub-picosecond metal-insulator phase transition in vanadium dioxide (VO2) has attracted extensive attention with potential applications in ultrafast Mott transistors. However, the development of VO2-based transistors lags behind, owing to the lack of an efficient and hysteresis-free electrostatic doping control. Here we report the first synthesis of p-type single crystalline VO2nanowires via catalyst-free chemical vapor deposition. The p-type doping was unambiguously confirmed by both solid and electrochemical gating methods, and further evidenced by the scanning photocurrent microscopic measurements. Interestingly, we observed that the photocurrent spot polarity at the metal-insulator domain walls was reversibly switched by electrochemical gating, which indicates a band bending flipping. Furthermore, we eliminated the common hysteresis in gate sweep and greatly shortened the transistor response time via a hybrid gating method, which combines the merits of liquid ionic and solid gating. The capability of efficient field effect modulation of ambipolar conduction and band alignment offers new opportunities on understanding the phase transition mechanism and enables novel electronic applications based on VO2.

  15. Co-propagation of two optical fields in a semiconductor doped dispersion decreasing fiber and modulational instability induced by cross-phase modulation

    NASA Astrophysics Data System (ADS)

    Nithyanandan, K.; Porsezian, K.

    2016-01-01

    A theoretical study of cross phase modulation (XPM) induced modulational instability (MI) in a semiconductor doped dispersion decreasing fiber (SD-DDF) is presented. The equation is suitably modeled to account for the saturable nonlinearity and dispersion decreasing nature of the fiber. Using linear stability analysis, the exact dispersion relation is obtained and MI analysis is performed. We exclusively analyze the influence of the walk-off effect in the instability spectra of an SD-DDF and an optimum walk-off parameter is identified. The contrasting nature of action of decreasing dispersion and saturating nonlinearity is emphasized, such that the former enhances and the latter suppresses bandwidth. Thus, a suitable combination of the two physical effects can enable one to realize the desired bandwidth profile. MI analysis in the normal dispersion regime is compared with the anomalous counterpart as well as the conventional single pump case and the results are tabulated. Also, our analytical results are compared through direct numerical simulation and the results are documented. Thus, we present a comprehensive study of XPM-MI in an SD-DDF and the influence of various physical effects on the MI dynamics.

  16. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1991-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

  17. Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

    1992-01-01

    Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

  18. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  19. Interaction between excitons and 2DEG Landau levels in modulation doped GaAs/AlGaAs heterojunctions

    NASA Astrophysics Data System (ADS)

    Preezant, Yulia; Gabbay, A.; Eitan, A. A.; Ashkinadze, B. M.; Cohen, E.; Pfeiffer, L. N.

    2007-04-01

    The reflection and photoluminescence spectra of n-type, modulation-doped GaAs/AlxGa1-xAs wide quantum wells (QW) and heterojunctions (HJ) were studied at T = 2K and under a perpendicularly applied magnetic field. The spectra show two groups of very sharp lines that originate in two types of excitations: excitons, whose center of mass motion is quantized, and interband Landau transitions of the 2DEG, that is confined to the QW edges. Abrupt energy and intensity variations of both types of lines are observed at filling factors ν = 1,2 of the 2DEG. These variations are interpreted in terms of an interaction between excitations that are spatially confined in separate parts of the wide QW (or HJ). It leads to energy level splittings and increased exciton dissociation by the magnetized 2DEG layer.

  20. Vertical 2D Heterostructures

    NASA Astrophysics Data System (ADS)

    Lotsch, Bettina V.

    2015-07-01

    Graphene's legacy has become an integral part of today's condensed matter science and has equipped a whole generation of scientists with an armory of concepts and techniques that open up new perspectives for the postgraphene area. In particular, the judicious combination of 2D building blocks into vertical heterostructures has recently been identified as a promising route to rationally engineer complex multilayer systems and artificial solids with intriguing properties. The present review highlights recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties. This overview is intended to bridge the gap between two major—yet largely disjunct—developments in 2D heterostructures, which are firmly rooted in solid-state chemistry or physics. Although the underlying types of heterostructures differ with respect to their dimensions, layer alignment, and interfacial quality, there is common ground, and future synergies between the various assembly strategies are to be expected.

  1. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    SciTech Connect

    Borges, P.D.; Petersen, J.E.; Scolfaro, L.; Leite Alves, H.W.; Myers, T.H.

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  2. Heterostructure design and growth conditions necessary for electron mobility exceeding 30x106 cm2/Vs in GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Fallahi, Saeed; Gardner, Geoffrey; Watson, John; Manfra, Michael

    2015-03-01

    Ultra-high purity GaAs/AlGaAs heterostructures remain the preeminent semiconductor platform for the study of strong correlations in low dimensions. In particular, the study of fragile fractional quantum Hall states such as ν = 5/2 and ν = 12/5 in the 2nd Landau level requires low disorder samples. While low temperature mobility is often specified as a parameter quantifying sample quality, it does not encode all information necessary to quantify disorder relevant to the fractional quantum Hall effect. Here we describe the heterostructure design considerations and molecular-beam-epitaxy growth conditions needed to achieve an electron mobility >30x106cm2/Vs. In particular, we report on the impact of several modulation doping schemes on mobility and the quality of transport in the 2nd Landau level. We also detail constraints on starting source material purity for the achievement of high mobility. In our work high mobility has been achieved primarily through improvements in starting source materials and heterostructure design rather than improvements in vacuum quality.

  3. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  4. Heterostructures as a quantum optical klistron

    SciTech Connect

    Malov, Yu.A.

    1995-12-31

    THE beam of {open_quotes}hot{close_quotes} ballistic electrons which were first obtained experimentally in (1) is considered when passing through the heterostructures consisting of two potential barriers in barriers in the presence of FEL tuning in infra-red region. In the presence of the first barrier the electron beam in the FEL electromagnetic field can either absorb or emit the field quanta. The initial electron beam may split into states n=1 (absorption of one quantum), n=0 (the beam energy unchanged), and n=-1 (emission of one quantum). The interference of the states with n=0, n=1 and n=0, n=1 results in the initiation of two traveling modulation waves at electromagnetic frequency w. Beats between these waves in the region of the of their overlapping lead to a periodic dependence of the modulation from w. It has been found that the spontaneous coherent radiation (SCR) intensity oscillates with the period depending on FEL frequency w. It is possible to increase or to decrease the spectral intensity of SCR varying w. The suggested idea of modulation on the first barrier of heterostructures and the radiation of modulated electron beam on the second barrier is a scheme of an quantum optical klistron in infra-red region.

  5. Generation of self-induced-transparency gap solitons by modulational instability in uniformly doped fiber Bragg gratings

    SciTech Connect

    Kalithasan, B.; Porsezian, K.; Senthilnathan, K.; Tchofo Dinda, P.

    2010-05-15

    We consider the continuous-wave (cw) propagation through a fiber Bragg grating that is uniformly doped with two-level resonant atoms. Wave propagation is governed by a system of nonlinear coupled-mode Maxwell-Bloch (NLCM-MB) equations. We identify modulational instability (MI) conditions required for the generation of ultrashort pulses in both anomalous and normal dispersion regimes. From a detailed linear stability analysis, we find that the atomic detuning frequency has a strong influence on the MI. That is, the atomic detuning frequency induces nonconventional MI sidebands at the photonic band gap (PBG) edges and near the PBG edges. Especially in the normal dispersion regime, MI occurs without any threshold condition, which is in contrast with that of conventional fiber Bragg gratings. We also perform a numerical analysis to solve the NLCM-MB equations. The numerical results of the prediction of both the optimum modulation wave number and the optimum gain agree well with that of the linear stability analysis. Another main result of the present work is the prediction of the existence of both bright and dark self-induced transparency gap solitons at the PBG edges.

  6. Multifunctional tunable multiwavelength erbium-doped fiber laser based on tunable comb filter and intensity-dependent loss modulation

    NASA Astrophysics Data System (ADS)

    Quan, Mingran; Li, Yuan; Tian, Jiajun; Yao, Yong

    2015-04-01

    A multiwavelength erbium-doped fiber laser based on tunable comb spectral filter and intensity-dependent loss modulation is proposed and experimentally demonstrated. The laser allows fine and multifunctional tunable operations of channel-spacing, peak-location, spectral-range, and wavelength-number. More specifically, channel-spacing switch from 0.4 nm to 0.2 nm and peak-location adjustment within half of free spectrum range are obtained via controlling the tunable comb filter. The wavelength-number and the spectral-range of the lasing lines can be accurately controlled by intensity-dependent loss modulation in the laser cavity, enabled by a power-symmetric nonlinear optical loop mirror. In addition, fine control over the wavelength-number at fixed spectral-range is realized by simply adjusting the pump power. More important, the tunable operation process for every type of specific parameter is individual, without influences for other output parameters. Such features of this fiber laser make it useful and convenient for the practical application.

  7. 27Al fourier-transform electron-spin-echo modulation of Cu 2+-doped zeolites A and X

    NASA Astrophysics Data System (ADS)

    Goldfarb, Daniella; Kevan, Larry

    Cu 2+-doped NaA, CaA, and NaX zeolites were studied using the electron-spin-echo modulation (ESEM) method. In both hydrated and dehydrated samples 27Al modulation has been observed. The time-domain ESEM traces were Fourier transformed and analyzed in the frequency domain. All FT-ESEM spectra of the hydrated samples showed a single peak at the Larmor frequency of 27Ai, indicating that the zeeman interaction is dominant and that the 27Al quadrupole and hyperfine interactions are relatively small. Considerable changes in the spectrum appear upon dehydration. Several frequencies significantly different from the Larmor frequency appear and the spectrum depends on the major cocation present. The major features of the spectra of the dehydrated zeolites could be theoretically reproduced, using exact diagonalization of the nuclear Hamiltonian, with relatively large isotropic hyperfine and quadrupole coupling constants. For example, in CuCaA and CuNaA zeolites the isotropic hyperfine constant is in the range of 0.2-0.5 and 0.8-1.0 MHz, respectively, with the quadrupole coupling constant in the range of 6-10 MHz for both.

  8. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    PubMed Central

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-01-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications. PMID:27374782

  9. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3

    NASA Astrophysics Data System (ADS)

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-07-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications.

  10. Strain-modulated ferromagnetism and band gap of Mn doped Bi2Se3.

    PubMed

    Qi, Shifei; Yang, Hualing; Chen, Juan; Zhang, Xiaoyang; Yang, Yingping; Xu, Xiaohong

    2016-01-01

    The quantized anomalous Hall effect (QAHE) have been theoretically predicted and experimentally confirmed in magnetic topological insulators (TI), but dissipative channels resulted by small-size band gap and weak ferromagnetism make QAHE be measured only at extremely low temperature (<0.1 K). Through density functional theory calculations, we systemically study of the magnetic properties and electronic structures of Mn doped Bi2Se3 with in-plane and out-of-plane strains. It is found that out-of-plane tensile strain not only improve ferromagnetism, but also enlarge Dirac-mass gap (up to 65.6 meV under 6% strain, which is higher than the thermal motion energy at room temperature ~26 meV) in the Mn doped Bi2Se3. Furthermore, the underlying mechanisms of these tunable properties are also discussed. This work provides a new route to realize high-temperature QAHE and paves the way towards novel quantum electronic device applications. PMID:27374782

  11. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    PubMed Central

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  12. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

    NASA Astrophysics Data System (ADS)

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-02-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut - (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices.

  13. Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures.

    PubMed

    Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun Myung

    2016-01-01

    The band width control through external stress has been demonstrated as a useful knob to modulate metal-insulator transition (MIT) in RNiO3 as a prototype correlated materials. In particular, lattice mismatch strain using different substrates have been widely utilized to investigate the effect of strain on transition temperature so far but the results were inconsistent in the previous literatures. Here, we demonstrate dynamic modulation of MIT based on electric field-controlled pure strain in high-quality NdNiO3 (NNO) thin films utilizing converse-piezoelectric effect of (001)-cut Pb(Mg(1/3)Nb(2/3)O3-(PbTiO3) (PMN-PT) single crystal substrates. Despite the difficulty in the NNO growth on rough PMN-PT substrates, the structural quality of NNO thin films has been significantly improved by inserting SrTiO3 (STO) buffer layers. Interestingly, the MIT temperature in NNO is downward shifted by ~3.3 K in response of 0.25% in-plane compressive strain, which indicates less effective TMI modulation of field-induced strain than substrate-induced strain. This study provides not only scientific insights on band-width control of correlated materials using pure strain but also potentials for energy-efficient electronic devices. PMID:26916618

  14. Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures.

    PubMed

    Ju, Changcheng; Yang, Jan-Chi; Luo, Cheng; Shafer, Padraic; Liu, Heng-Jui; Huang, Yen-Lin; Kuo, Ho-Hung; Xue, Fei; Luo, Chih-Wei; He, Qing; Yu, Pu; Arenholz, Elke; Chen, Long-Qing; Zhu, Jinsong; Lu, Xiaomei; Chu, Ying-Hao

    2016-02-01

    The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications. PMID:26640119

  15. Pseudo-random binary sequency phase modulation in high power Yb-doped fiber amplifiers

    NASA Astrophysics Data System (ADS)

    Robin, Craig; Dajani, Iyad; Zernigue, Clint; Flores, Angel; Pulford, Ben; Lanari, Ann; Naderi, Shadi

    2013-03-01

    We present experimental and theoretical studies on the stimulated Brillouin scattering (SBS) threshold in fiber amplifiers seeded with a spectrally broadened single-frequency laser source. An electro-optic phase modulator is driven with various pseudo-random binary sequence (PRBS) patterns to highlight the unique characteristics of this linewidth broadening technique and its facility in SBS mitigation. Theoretical predictions show a variation in SBS suppression based on PRBS pattern and modulation frequency. These predictions are experimentally investigated in a kilowatt level monolithic fiber amplifier operating with near diffraction-limited beam quality. We also show Rayleigh scattering and other sources of back reflected light in phase modulated signals can seed the SBS process and significantly reduce the nonlinear threshold.

  16. Npn double heterostructure bipolar transistor with ingaasn base region

    DOEpatents

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  17. Persistent photoconductance in doping-modulated and compensated a -Si:H

    SciTech Connect

    Hamed, A.J. )

    1991-09-15

    We present experimental results and numerical calculations in support of the following model to explain the origin of the persistent-photoconductivity effect (PPC) in {ital p}-{ital n} multilayers of hydrogenated amorphous silicon ({ital a}-Si:H): Small light exposures create Staebler-Wronski defects in the {ital p}-type regions of the multilayer, making these regions more intrinsic. This brings the equilibrium Fermi level of the multilayer closer to the conduction band in the depletion zones of the {ital n}-type regions, causing an increase in the conductance of the layered structure when the conductance is electron dominated. At large light exposures, the Staebler-Wronski defects created in the {ital n}-type regions pull the Fermi level away from the conduction band, decreasing the conductance of the film. Our experimental results show that, for a given light intensity, the creation rate and annealing kinetics of the PPC in multilayers are correlated with the creation rate and annealing kinetics of the light-induced conductance changes in unlayered {ital p}-type and {ital n}-type {ital a}-Si:H films having the same dopings as the {ital p}-type and {ital n}-type regions in the multilayer. The PPC follows a stretched-exponential time relaxation with the same parameters describing the decays of other metastable conditions in {ital a}-Si:H. Our computer calculations can reproduce the dark conductivity and magnitude of the PPC in a multilayer (doped at 100 ppm) as a function of sublayer thickness {ital d}, except for {ital d}{lt}20 nm.

  18. Photoluminescence and hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular-beam epitaxy

    SciTech Connect

    Baeta Moreira, M.V.; Py, M.A.; Ilegems, M.

    1993-05-01

    Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/In{sub y}Ga{sub l}-{sub y}As/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy were compared. By using these two characterization methods, the influences of the growth temperature T{sub s}, the InGaAs quantum-well channel thickness d{sub ch}, and its indium composition y were studied. interesting correlations were established between their 77 K PL spectra and their transport properties measured either in the dark or under while-light illumination. The PL spectra exhibit one or two bands which are attributed to transitions from electronic states belonging to the first or to the second subband formed in the conductions quantum well, the second transition at higher energy being observed only when the two-dimensional concentration exceeds a critical value n{sub c} which, in the dark, is {approximately} 2.4X10{sup 12} cm{sup {minus}2}(i.e., d{sub ch}{approx}108 {Angstrom}) for the homogeneously doped heterostructures with y=0.25. 27 refs., 10 figs.

  19. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE PAGESBeta

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-01

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  20. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    NASA Astrophysics Data System (ADS)

    Laroche, D.; Huang, S.-H.; Chuang, Y.; Li, J.-Y.; Liu, C. W.; Lu, T. M.

    2016-06-01

    We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows hole densities as low as p ˜ 1.1 × 1010 cm-2 to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is found to be α ˜ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ˜ 1.0 × 1011 cm-2, the effective mass m* is ˜0.105 m0, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

  1. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    PubMed Central

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  2. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.

    PubMed

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-01-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a 'giant' resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields. PMID:27126101

  3. Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Myoung, Nojoon; Park, Hee Chul; Lee, Seung Joo

    2016-04-01

    Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

  4. Fermi-surface induced modulation in an optimally doped YBCO superconductor.

    SciTech Connect

    Liu, X.; Islam, Z.; Sinha, S. K.; Moss, S. C.; McQueeney, R. J.; Lang, J. C.; Welp, U.; Univ. of California at San Diego; Univ. of Houston; Iowa State Univ.

    2008-01-01

    We have observed a Fermi-surface (FS) induced lattice modulation in a YBa{sub 2}Cu{sub 3}O{sub 7-x} superconductor with a wave vector along CuO chains; i.e., q{sub 1} = (0,{delta},0). The value of {delta} {approx} 0.21 is twice the Fermi wave vector (2k{sub F}) along b* connecting nearly nested FS 'ridges'. The q{sub 1} modulation exists only within O-vacancy-ordered islands [characterized by q{sub 0} = (1/4,0,0)] and persists well above and below T{sub c}. Our results are consistent with the presence of a FS-induced charge-density wave.

  5. Nitrogen-doped carbon nanoparticle modulated turn-on fluorescent probes for histidine detection and its imaging in living cells

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaohua; Zhao, Tingbi; Nie, Zhou; Miao, Zhuang; Liu, Yang; Yao, Shouzhuo

    2016-01-01

    In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which presented great potential in the bio-labeling assay and clinical diagnostic applications.In this work, nitrogen-doped carbon nanoparticle (N-CNP) modulated turn-on fluorescent probes were developed for rapid and selective detection of histidine. The as synthesized N-CNPs exhibited high fluorescence quantum yield and excellent biocompatibility. The fluorescence of N-CNPs can be quenched selectively by Cu(ii) ions with high efficiency, and restored by the addition of histidine owing to the competitive binding of Cu(ii) ions and histidine that removes Cu(ii) ions from the surface of the N-CNPs. Under the optimal conditions, a linear relationship between the increased fluorescence intensity of N-CNP/Cu(ii) ion conjugates and the concentration of histidine was established in the range from 0.5 to 60 μM. The detection limit was as low as 150 nM (signal-to-noise ratio of 3). In addition, the as-prepared N-CNP/Cu(ii) ion nanoprobes showed excellent biocompatibility and were applied for a histidine imaging assay in living cells, which

  6. Preface: Heterostructure terahertz devices

    NASA Astrophysics Data System (ADS)

    Ryzhii, Victor

    2008-08-01

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  7. Probing interlayer interactions in WS2 -graphene van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Chung, Ting Fung; Yuan, Long; Huang, Libai; Chen, Yong P.

    Two-dimensional crystals based van der Waals coupled heterostructures are of interest owing to their potential applications for flexible and transparent electronics and optoelectronics. The interaction between the 2D layered crystals at the interfaces of these heterostructures is crucial in determining the overall performance and is strongly affected by contamination and interfacial strain. We have fabricated heterostructures consisting of atomically thin exfoliated WS2 and chemical-vapor-deposited (CVD) graphene, and studied the interaction and coupling between the WS2 and graphene using atomic force microscopy (AFM), Raman spectroscopy and femtosecond transient absorption measurement (TAM). Information from Raman-active phonon modes allows us to estimate charge doping in graphene and interfacial strain on the crystals. Spatial imaging probed by TAM can be correlated to the heterostructure surface morphology measured by AFM and Raman maps of graphene and WS2, showing how the interlayer coupling alters exciton decay dynamics quantitatively.

  8. Heating of the magnetic-ion spin system in modulation doped ZnMnSe/ZnBeSe quantum wells by means of photoexcitation.

    SciTech Connect

    Keller, D.; Astakhov, G. V.; Yakovlev, D. R.; Barrick, T.; Crooker, S. A.; Hansen, L.; Ossau, W.; Molenkamp, L. W.

    2002-01-01

    Heating of the spin system of magnetic ions by means of photoexcited carriers has been studied in modulation-doped (Zn,Mn)Se/(Zn,Be)Se quantum well structures with different electron densities varying from about 10{sup 9} to 5.5 x 10{sup 11} cm{sup -2}. The elevated temperature of the magnetic ions manifests in a reduced Zeeman splitting of the carriers already for low excitation densities. The efficiency of the heating decreases with increasing electron concentration.

  9. Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier.

    PubMed

    Lee, Yong Wook; Kim, Bong-Jun; Choi, Sungyoul; Lee, Yong Wan; Kim, Hyun-Tak

    2009-10-26

    By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of approximately 40 micros were successively generated at a repetition rate of 1 kHz. PMID:19997180

  10. Photoresponse in Graphene Boron Nitride Vertical Heterostructures

    NASA Astrophysics Data System (ADS)

    Andersen, Trond; Ma, Qiong; Lui, Chun-Hung; Nair, Nityan; Gabor, Nathaniel; Young, Andrea; Fang, Wenjing; Watanabe, Kenji; Taniguchi, Takashi; Kong, Jing; Gedik, Nuh; Jarillo-Herrero, Pablo

    2015-03-01

    Combining two-dimensional materials into vertical heterostructures reveals diverse, intriguing phenomena and provides a novel way of engineering materials with desired electronic properties. Placing graphene on hexagonal boron nitride (hBN) has given particularly interesting results, including enhanced mobility, opening of a band gap, and highly controllable photo-induced doping. We explore the photoresponse of vertical graphene-hBN-graphene heterostructures in a high electronic temperature regime where thermionic emission dominates. Near the charge neutral point, we observe a pronounced conductance peak, which we attribute to a cooling bottleneck that appears at low carrier density, thus suggesting hot carrier enhanced thermionic emission. To further investigate the mechanism by which current is generated, we conduct two-pulse correlation measurements and study the temporal dynamics of the system. We observe a positive correlation, implying that the hot carriers thermalize before crossing the hBN barrier. Finally, we propose an advanced, modified two-temperature model, which allows for numerical simulations that are consistent with our measurements.

  11. Giant structural modulation & abnormal ferromagnetism in ferroelectric & ultrathin ferromagnetic digital superlattices

    NASA Astrophysics Data System (ADS)

    Guo, Hangwen; Wang, Zhen; Saghayezhian, Mohammad; Chen, Lina; Jin, Rongying; Plummer, Ward; Zhang, Jiandi; Dong, Shuai

    The nature of magnetoelectric coupling in oxide heterostructure remains interesting but illusive, largely because the complex nature of interface intermixing and diffusion. In this work, we present our ability to fabricate superlattices consist of ferroelectric BTO & ferromagnetic LSMO, with minimum interfacial intermixing confined within half a unit cell. Such high quality superlattices with sharp interfaces allow us to explore magnetoelectric coupling effect into ultrathin region (reduced dimensionality) and observe ferroelectric induced abnormal magnetic behavior. A detailed STEM study reveals that the traditional electron/hole carrier doping scenario does not play a major role. Instead, distinct modulation of lattice displacement and octahedron tilting is responsible for the coupling effect and abnormal magnetic behavior. Our study highlights the importance of structural-property relationship in oxide heterostructures. Supported by U.S. DOE under Grant No. DOE DE-SC0002136.

  12. Shubnikov-de Haas oscillations and quantum hall effect in modulation-doped HgTe-CdTe superlattices

    NASA Astrophysics Data System (ADS)

    Hoffman, C. A.; Meyer, J. R.; Arnold, D. J.; Bartoli, F. J.; Lansari, Y.; Cook, J. W.; Schetzina, J. F.

    1991-10-01

    We have investigated quantum oscillations in the magneto-transport properties of HgTe-CdTe superlattices grown by molecular-beam epitaxy. Modulation doping was achieved by incorporating either indium donors or arsenic acceptors into the CdTe barriers. In a p-type sample, quantized plateaus were observed in the Hall conductivity down to i=3 conduction channels. Since the structure contained 200 periods, this implies that the quantized holes populated only a small fraction of the total superlattice volume. A mixed conduction analysis of the nonoscillating component of magneto-transport data provided confirming evidence for the presence of a two-dimensional holes gas with the appropriate density in addition to the supperlattice holes. Previous reports of the quantum Hall effect in HgTe-CdTe also yielded i far less than the total number of superlattice wells. In contrast, an n-type sample from the present study displayed a single quantum Hall plateau at i≊140, indicating that in this case most of the 200 superlattice periods contributed to the conduction. We argue that this represents the first observation of the qunatum Hall effect associated with carriers distributed through the interior of a HgTe-CdTe superlattice.

  13. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ≤3 and ≤1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the σ{sup −}σ{sup +} and σ{sup −}σ{sup −} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at σ{sup −} excitation polarization over the σ{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  14. Coherent dynamics of Landau-Levels in modulation doped GaAs quantum wells at high magnetic fields

    NASA Astrophysics Data System (ADS)

    Liu, Cunming; Paul, Jagannath; Reno, John; McGill, Stephen; Hilton, David; Karaiskaj, Denis

    By using two-dimensional Fourier transform spectroscopy, we investigate the dynamics of Landau-Levels formed in modulation doped GaAs/AlGaAs quantum wells of 18 nm thickness at high magnetic fields and low temperature. The measurements show interesting dephasing dynamics and linewidth dependency as a function of the magnetic field. The work at USF and UAB was supported by the National Science Foundation under grant number DMR-1409473. The work at NHMFL, FSU was supported by the National Science Foundation under grant numbers DMR-1157490 and DMR-1229217. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

  15. Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

    NASA Astrophysics Data System (ADS)

    Neumayer, Sabine M.; Manzo, Michele; Kholkin, Andrei L.; Gallo, Katia; Rodriguez, Brian J.

    2016-03-01

    Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, as well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode-PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN-PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.

  16. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    PubMed

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices. PMID:26554700

  17. Heterostructure terahertz devices.

    PubMed

    Ryzhii, Victor

    2008-08-19

    The terahertz (THz) range of frequencies is borderline between microwave electronics and photonics. It corresponds to the frequency bands of molecular and lattice vibrations in gases, fluids, and solids. The importance of the THz range is in part due to numerous potential and emerging applications which include imaging and characterization, detection of hazardous substances, environmental monitoring, radio astronomy, covert inter-satellite communications, as well as biological and medical applications. During the last decades marked progress has been achieved in the development, fabrication, and practical implementation of THz devices and systems. This is primarily owing to the utilization of gaseous and free electron lasers and frequency converters using nonlinear optical phenomena as sources of THz radiation. However, such devices and hence the systems based on them are fairly cumbersome. This continuously stimulates an extensive search for new compact and efficient THz sources based on semiconductor heterostructures. Despite tremendous efforts lasting several decades, the so-called THz gap unbridged by semiconductor heterostructure electron and optoelectron devices still exists providing appropriate levels of power of the generated THz radiation. The invention and realization of quantum cascade lasers made of multiple quantum-well heterostructures already resulted in the partial solution of the problem in question, namely, in the successful coverage of the high-frequency portion of the THz gap (2-3 THz and higher). Further advancement to lower frequencies meets, perhaps, fundamental difficulties. All this necessitates further extensive theoretical and experimental studies of more or less traditional and novel semiconductor heterostructures as a basis for sources of THz radiation. This special issue includes 11 excellent original papers submitted by several research teams representing 14 institutions in Europe, America, and Asia. Several device concepts which

  18. Analytical Model to Determine the Gate Leakage Current in In0.52Al0.48As/InxGa1-xAs Pseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission

    NASA Astrophysics Data System (ADS)

    Dickmann, Jürgen; Daembkes, Heinrich; Schildberg, Steffen; Fittng, Hans-Joachim; Ellrod, Peter; Tegude, Franz

    1994-04-01

    The gate leakage current of pulse doped In0.52Al0.48As/In xGa1- xAs pseudomorphic modulation doped field-effect transistors (MODFETs) is analysed by thermionic field emission theory. For the first time, a theoretically based investigation of the leakage current for this type of device is carried out. The influence of parameters of the layer structure design on the gate leakage current such as the thickness of the barrier layer or the doping concentration in the supply layer is predicted. The model adequately predicts the experimental decrease in leakage current with increased thickness of the barrier layer and reduced doping concentration.

  19. Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

    SciTech Connect

    Galiev, G. B.; Vasil’evskii, I. S.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Pushkarev, S. S.; Maltsev, P. P.

    2015-09-15

    The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

  20. CBE growth of AlGaAs/GaAs heterostructures and their device applications

    NASA Astrophysics Data System (ADS)

    Houng, Yu-Min

    1990-10-01

    We demonstrate that the chemical beam epitaxial (CBE) technique is suitable for growing high quality AlGaAs/GaAs heterostructures for high-speed and photonic device applications. Substantial improvements in electrical and optical properties of Al xGa 1- xAs were achieved using triisobutylaluminum (TIBAl) instead of triethylaluminum source. Highly uniform Al xGa 1- xAs:Si and Al xGa 1- xAs:C films with very low surface defect density were grown. The electrical and optical properties of these materials are comparable to those of high quality organometallic vapor phase epitaxial (OMVPE) Al xGa 1- xAs. CBE grown 0.25 °m gate length modulation-doped field effect transistors (MODFET) have been fabricated. MODFETs having fT greater than 38 GHz and a 1.7 dB noise figure with 10 dB associated gain at 18 GHz are reported. Device quality AlGaAs/GaAs heterojunction bipolar transistor (HBT), electro-optic modulator and light emitter array structures grown by CBE technique were also demonstrated.

  1. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  2. Fermi-energy edge singularity and excitonic enhancement associated with the second subband in asymmetric modulation-doped quantum wells

    NASA Astrophysics Data System (ADS)

    Fisher, T. A.; Simmonds, P. E.; Skolnick, M. S.; Martin, A. D.; Smith, R. S.

    1993-11-01

    A study of the Fermi-energy edge singularity (FEES) in the second (n=2) subband of asymmetric modulation-doped (AlGa)As-(InGa)As-GaAs quantum wells (AMDQW's) is reported. In one of the AMDQW's a Schottky gate is employed to vary the electron density in the n=2 subband (ns,2) from 0 to 1×1011 cm-2. Temperature-dependent photoluminescence excitation (PLE) measurements clearly show that the n=2 PLE feature has FEES character for ns,2>~0.4×1011 cm-2. In contrast to PLE, photoluminescence (PL) intensity is not a true measure of oscillator strength, since PL intensity can be affected by competing recombination pathways. Temperature-dependent PL measurements have been performed on two types of AMDQW. One type has ns,2~0, with the Fermi energy close to the n=2 subband energy. The other type has ns,2=1×1011 cm-2 and a FEES associated with n=2 observed in PLE. We demonstrate that the very similar broadening and reduction in peak height of the n=2 PL peak with temperature for the two types of samples can be accounted for in terms of spreading of the electron or exciton populations near the n=2 subband edge. Therefore, we conclude that temperature-dependent PL does not provide unequivocal evidence for a many-body enhancement of the n=2 PL transition, in contrast to that reported by Chen et al. [Phys. Rev. Lett. 64, 2434 (1990)].

  3. Two-dimensional Shubnikov-de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures

    NASA Astrophysics Data System (ADS)

    Scholl, S.; Schäfer, H.; Waag, A.; Hommel, D.; von Schierstedt, K.; Kuhn-Heinrich, B.; Landwehr, G.

    1993-06-01

    For the first time clear evidence for two-dimensional Shubnikov-de Haas oscillations in modulation-doped CdTe/CdMnTe quantum-well structures is reported. The structures were grown by molecular-beam epitaxy using ZnBr2 as a novel source material for the n-type doping of II-VI epitaxial layers. From an analysis of the Shubnikov-de Haas oscillations a carrier density of 9×1011 cm-2 and an effective mass of 0.1 m0 could be deduced. Due to band filling the Fermi energy in the subbands is shifted above the conduction-band edge. This can be detected as a Stokes shift of absorption compared to photoluminescence recombination. From the Fermi energy shift the carrier concentration can be estimated, which agrees well with values determined by Hall-effect measurements.

  4. Strongly-correlated heterostructures

    SciTech Connect

    Okamoto, Satoshi

    2012-01-01

    Electronic phase behavior in correlated-electron systems is a fundamental problem of condensed matter physics. The change in the phase behavior near surfaces and interfaces, i.e., {\\em electronic reconstruction}, is therefore the fundamental issue of the correlated-electron surface or interface science. In addition to basic science, understanding of such a phase behavior is of crucial importance for potential devices exploiting the novel properties of the correlated systems. In this article, we present a general overview of the field, and then discuss the recent theoretical progress mainly focusing on the correlation effects. We illustrate the general concept of {\\em electronic reconstruction} by studying model heterostructures consisting of strongly-correlated systems. Future directions for research are also discussed.

  5. Anomalous Enhancement of the Superconducting Transition Temperature of Electron-doped La2-xCexCuO4 and Pr2-xCexCuO4 Cuprate Heterostructures

    SciTech Connect

    K Jin; P Vach; X Zhang; U Grupel; E Zohar; I Diamant; Y Dagan; S Smadici; P Abbamonte; R Greene

    2011-12-31

    The superconducting transition temperature T{sub c} of multilayers of electron-doped cuprates, composed of underdoped (or undoped) and overdoped La{sub 2-x}Ce{sub x}CuO{sub 4} (LCCO) and Pr{sub 2-x}Ce{sub x}CuO{sub 4} (PCCO) thin films, is found to increase significantly with respect to the T{sub c} of the corresponding single-phase films. By investigating the critical current density of superlattices with different doping levels and layer thicknesses, we find that the T{sub c} enhancement is caused by a redistribution of charge over an anomalously large distance.

  6. Thermal and Electrical Transport in Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Ravichandran, Jayakanth

    vacancies are employed to achieve band engineering. This method was used to obtain tunable transparent conducting properties and thermoelectric properties for heavily doped strontium titanate. The second aspect investigated is the use of strongly correlated materials for thermoelectricity. The cobaltates, specifically layered cobaltates, show large thermopower even at very large carrier densities. The coupling of thermopower and electrical conductivity is shown to be weaker for a strongly correlated material such as cobaltate, which opens up possibilities of complete decoupling of all three thermoelectric coefficients. Finally, the thermal properties of complex oxides, specifically in perovskite titanates, is addressed in detail. Thermal conductivity is demonstrated to be a sensitive probe for defects in a system, where processing conditions play a significant role in modulating the crystallinity of the material. The perovskite titanate superlattice system of strontium titanate and calcium titanate is used beat alloy limit. It also shows interesting period thickness dependent thermal properties. The possible origin of this effect is briefly discussed and future directions for this research is also elaborated in detail.

  7. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect

    Singh, Kirandeep; Kaur, Davinder; Singh, Sushil Kumar

    2014-09-21

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}~55 μC/cm² obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290 K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ~123 emu/cm³. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  8. MBE HgCdTe heterostructure detectors

    NASA Technical Reports Server (NTRS)

    Schulman, Joel N.; Wu, Owen K.

    1990-01-01

    HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

  9. Electric-field induced strain modulation of magnetization in Fe-Ga/Pb(Mg{sub 1/3}Nb{sub 2/3})-PbTiO{sub 3} magnetoelectric heterostructures

    SciTech Connect

    Zhang, Yue Wang, Zhiguang; Wang, Yaojin; Luo, Chengtao; Li, Jiefang; Viehland, Dwight

    2014-02-28

    Magnetostrictive Fe-Ga thin layers were deposited on 〈110〉-oriented Pb(Mg{sub 1/3}Nb{sub 2/3})-30%PbTiO{sub 3} (PMN-30%PT) substrates by pulsed laser deposition. The as-prepared heterostructures showed columnar arrays aligned in the out-of-plane direction. Transmission electron microscopy revealed nanocrystalline regions within the columnar arrays of the Fe-Ga film. The heterostructure exhibited a strong converse magnetoelectric coupling effect of up to 4.55 × 10{sup −7} s m{sup −1}, as well as an electric field tunability of the in-plane magnetic anisotropy. Furthermore, the remanent magnetization states of the Fe-Ga films can be reversibly and irreversibly changed by external electric fields, suggesting a promising and robust application in magnetic random access memories and spintronics.

  10. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.