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Sample records for molecular beam deposition

  1. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  2. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  3. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    SciTech Connect

    Chiarella, F. Barra, M.; Ciccullo, F.; Cassinese, A.; Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R.

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  4. Ion-beam assisted deposition of thin molybdenum films studied by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Robbemond, Arie; Thijsse, Barend J.

    1997-05-01

    We report results obtained by molecular dynamics simulation of low energy argon-ion assisted growth of thin molybdenum films (≈ 20 Å). The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface orientation, atomic displacements, surface roughness, sputtering, point defects, and the influence of off-normal atom incidence are discussed.

  5. Semiconductor-based heterostructure formation using low energy ion beams: Ion beam deposition (IBD) and combined ion and molecular beam deposition (CIMD)

    SciTech Connect

    Herbots, N.; Hellman, O.C.; Cullen, P.A.; Vancauwenberghe, O.

    1988-09-15

    In our previous work, we investigated the use of ion beam deposition (IBD) to grow epitaxial films at temperatures lower than those used in thermal processing (less than 500/sup 0/C). Presently, we have applied IBD to the growth of dense (6.4 x 10/sup 22/ atom/cm/sup 3/) silicon dioxide thin films at 400/sup 0/C. Through these experiments we have found several clues to the microscopic processes leading to the formation of thin film phases by low energy ions. Using Monte-Carlo simulations, we have found that low energy collision cascades in silicon have unique features such as a high probability of relocation events that refill vacancies as they are created. Our results show that the combination of a low defect density in low energy collision cascades with the high mobility of interstitials in covalent materials can be used to athermally generate atomic displacements tha can lead to ordering. These displacements can lead to epitaxial ordering at substrate temperatures below the minimum temperature necessary for molecular beam epitaxy (550/sup 0/C). It can also lead to the formation of high quality silicon dioxide at temperatures well below that of thermal oxidation in silicon (i.e. <850/sup 0/C). A growth model which we derive from these observations provides a fundamental understanding of how atomic collisions can be used to induce epitaxy or compound formation at low temperatures.

  6. Importance of dewetting in organic molecular-beam deposition: Pentacene on gold

    SciTech Connect

    Beernink, G.; Strunskus, T.; Witte, G.; Woell, Ch.

    2004-07-19

    Organic molecular-beam deposition of pentacene on gold substrates has been investigated using a multitechnique approach. The morphology of the organic thin films depends strongly on the substrate temperature. Pronounced dewetting and island formation are observed at room temperature. Whereas pentacene molecules adopt a planar monolayer structure, they continue to grow in an upright orientation in multilayer films as inferred from x-ray absorption spectroscopy and atomic force microscopy. These results are in pronounced contrast to a recent scanning tunneling microscopy (STM) study by Kang and Zhu [Appl. Phys. Lett. 82, 3248 (2003)] and indicate fundamental problems in the interpretation of STM measurements for organic thin films.

  7. Preparation and Characterization of CuInSe2 Thin Films by Molecular-Beam Deposition Method

    NASA Astrophysics Data System (ADS)

    Nishitani, Mikihiko; Negami, Takayuki; Terauchi, Masaharu; Hirao, Takashi

    1992-02-01

    Polycrystalline CuInSe2 films were prepared by coevaporation of the elements under an ultrahigh vacuum by a molecular-beam deposition method. The composition of the film was controlled by changing the In molecular-beam flux intensity while the other elements remained at a constant value. It is shown, at the substrate temperature of 500°C, that there is a critical In molecular-beam flux intensity for the fabrication of stoichiometric films. At the In molecular-beam intensities higher than the critical value, single-phase CuInSe2 films with nearly constant compositions are obtained as a result of the removal effects of excess In. It is shown that the present coevaporation process is suitable for the fabrication of stoichiometric or slightly In-rich composition films. Furthermore, the structural and electrical properties of the films were investigated and discussed in relation to film composition.

  8. Rubidium beam flux dependence of film properties of Ba1 - xRbxBiO3 deposited by molecular-beam epitaxy using distilled ozone

    NASA Astrophysics Data System (ADS)

    Ogihara, M.; Toda, F.; Makita, T.; Abe, H.

    1993-10-01

    We have focused our attention on the dependence of Ba1-xRbxBiO3 (BRBO) film composition ratio and film properties on rubidium-beam-flux intensity. BRBO films were deposited on MgO(100) substrates by molecular-beam epitaxy (MBE) using distilled ozone. Systematic measurements showed that the rubidium content was nearly independent of rubidium-beam-flux intensity in a wide beam-flux range. Therefore, it can be concluded that some degree of self-control of rubidium stoichiometry is actually possible in BRBO film growth by MBE. This study also revealed that the BRBO film properties had strong dependences on rubidium-beam-flux intensity even in the range for self-control of rubudium stoichiometry. Our study also clarified that rubidium-beam flux affects the barium content in the BRBO film.

  9. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    SciTech Connect

    Shi, B. M.; Xie, M. H.; Wu, H. S.; Wang, N.; Tong, S. Y.

    2006-10-09

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE.

  10. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Boschker, Jos E.; Boniardi, Mattia; Redaelli, Andrea; Riechert, Henning; Calarco, Raffaella

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80-150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  11. Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

    NASA Astrophysics Data System (ADS)

    Wang, Jinxing; Hao, Jinghua; Zhang, Yangyang; Wei, Hongmei; Mu, Juyi

    2016-06-01

    Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration-corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of ∼40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface.

  12. Ionized cluster beam deposition

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.

    1983-01-01

    Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

  13. LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

    NASA Astrophysics Data System (ADS)

    Pelloquin, Sylvain; Saint-Girons, Guillaume; Baboux, Nicolas; Albertini, David; Hourani, Waël; Penuelas, Jose; Grenet, Geneviève; Plossu, Carole; Hollinger, Guy

    2013-01-01

    A study of the structural and electrical properties of amorphous LaAlO3 (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique—leading to a step and terraces surface morphology—and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O2 in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 °C, oxygen partial pressure settled at 10-6 Torr, and 550 W of power applied to the O2 plasma) and post-depositions treatments were investigated to optimize the dielectric constant (κ) and leakage currents density (JGate at |VGate| = |VFB - 1|). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 Å, and JGate ≈ 10-2A/cm2. This confirms the importance of LaAlO3 as an alternative high-κ for ITRS sub-22 nm technology node.

  14. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    SciTech Connect

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-03-27

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K{sub E}). The major role played by K{sub E} is in achieving highly ordered and flat films. In the range K{sub E}{approx_equal}3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor {approx}5. The highest value (1.0 cm{sup 2} V{sup -1} s{sup -1}) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K{sub E}>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K{sub E}{<=}5.5 eV.

  15. Experimental cell for molecular beam deposition and magnetic resonance studies of matrix isolated radicals at temperatures below 1 K

    SciTech Connect

    Sheludiakov, S. Ahokas, J.; Vainio, O.; Järvinen, J.; Zvezdov, D.; Vasiliev, S.; Khmelenko, V. V.; Mao, S.; Lee, D. M.

    2014-05-15

    We present the design and performance of an experimental cell constructed for matrix isolation studies of H and D atoms in solid H{sub 2}/D{sub 2} films, which are created by molecular beam deposition at temperatures below 1 K. The sample cell allows sensitive weighing of the films by a quartz microbalance (QM) and their studies by magnetic resonance techniques in a strong magnetic field of 4.6 T. We are able to regulate the deposition rate in the range from 0.01 to 10 molecular layers/s, and measure the thickness with ≈0.2 monolayer resolution. The upper QM electrode serves as a mirror for a 128 GHz Fabry-Perot resonator connected to an electron spin resonance (ESR) spectrometer. H and D atoms were created by RF discharge in situ in the sample cell, and characterized by ESR and electron-nuclear double resonance. From the magnetic resonance measurements we conclude that the films are smooth and provide homogeneous trapping conditions for embedded atoms. The current sample cell design also makes it possible to calibrate the ESR signal and estimate the average and local concentrations of H and D radicals in the film.

  16. High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Ratcliff, C.; Grassman, T. J.; Ringel, S. A.; Carlin, J. A.

    2011-10-03

    Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P{sub 2}:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon.

  17. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy

    SciTech Connect

    Shin Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J.

    2005-10-31

    Using a dual molecular-beam epitaxy (MBE)-pulsed laser deposition (PLD) ultrahigh vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along the <100> directions; the film roughness and mound separation increase with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and the morphology rather resembles that of an ion-etched Ge(001) surface. The areal feature density is higher for PLD films than for MBE films grown at the same average growth rate and temperature. Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD and MBE. We attribute these differences to the higher yield of defect generation by energetic species in PLD.

  18. Optical properties of organic films, multilayers and plasmonic metal-organic waveguides fabricated by organic molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Wickremasinghe, Niranjala D.

    In this thesis, the optical properties of tris (8-hydroxyquinoline) aluminum (Alq3) and 3,5,9,10-perylentetracarboxylic dianhydride (PTCDA) organic films, PTCDA/ Alq3 multilayers and plasmonic Alq3 -metal waveguides are investigated. The organic films and heterostructures used for this work were fabricated by organic molecular beam deposition (OMBD). We investigated the quenching of the light emission in Alq3 films grown on a Si substrate as a function of cw laser excitation intensity at varying temperatures from 15 to 300 K. The saturation of the singlet-singlet annihilation coefficient was measured with spectrally-integrated (SI) photoluminescence (PL) using a photodiode. The bimolecular quenching coefficient was further studied with time-resolved (TR) PL as a function of 100 fs pulse fluences. The PL quenching is attributed to the annihilation of trapped excitons at Alq3 nanocrystal grain boundaries. The saturation is explained by the limited density of available trapping states at the grain boundaries. Our interpretation is supported by structural investigations of ultrathin Alq3 films with atomic force microscopy (AFM), scanning electron microscopy (SEM) and by comparing the experimental data with calculations using a coupled rate equation model. The wavelength dispersion of the refractive indices of PTCDA and Alq 3 layers and of PTCDA/Alq3 multilayer waveguides grown on Pyrex substrates was investigated. The m-line technique, an evanescent prism coupling technique, was used to determine the layers' thickness and the in-plane (TE modes) and normal (TM modes) refractive indices. The potential for controlling the refractive index dispersion and anisotropy by tailored organic multilayer waveguides is discussed.

  19. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  20. Electron Beam Ablation and Deposition

    NASA Astrophysics Data System (ADS)

    Kovaleski, S. D.; Gilgenbach, R. M.; Ang, L. K.; Lau, Y. Y.

    1997-11-01

    Ablation of fused silica, titanium nitride, and boron nitride with a channel spark electron beam is being studied. The channel spark is a low energy (15-20kV), high current (1600A) electron beam source developed at KFK(G. Muller and C. Schultheiss, Proc. of Beams `94, Vol. II, p833). This is a pseudospark device which operates in the ion focused regime of electron beam transport. For this reason, a low pressure (10-15mTorr of Ar) background gas is used to provide electron beam focusing. Plume composition and excitation has been studied via optical emission spectroscopy. Ablation has also been imaged photographically. Electron density gradients and densities are being studied through laser deflection. Film deposition experiments are also being performed. Electron transport and energy deposition in metals are being simulated in the ITS-TIGER code(Sandia Report No. SAND 91-1634).

  1. Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

    SciTech Connect

    Belmoubarik, M.; Nozaki, T.; Sahashi, M.; Endo, H.

    2013-05-07

    Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co{sub 3}Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 Degree-Sign C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 {Omega} cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co{sub 3}Pt surface oxidation was discussed.

  2. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Kong, W. Jiao, W. Y.; Kim, T. H.; Brown, A. S.; Mohanta, A.; Roberts, A. T.; Fournelle, J.; Losurdo, M.; Everitt, H. O.

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  3. Ion beam deposited protective films

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1981-01-01

    Sputter deposition of adherent thin films on complex geometric surfaces by ion beam sources is examined in order to evaluate three different types of protective coatings for die materials. In the first experiment, a 30 cm diameter argon ion source was used to sputter deposit adherent metallic films up to eight microns thick on H-13 steel, and a thermal fatigue test specimen sputter deposited with metallic coatings one micron thick was immersed in liquid aluminum and cooled by water for 15,000 cycles to simulate operational environments. Results show that these materials do protect the steel by reducing thermal fatigue and thereby increasing die lifetime. The second experiment generated diamond-like carbon films using a dual beam ion source system that directed an eight cm argon ion source beam at the substrates. These films are still in the process of being evaluated for crystallinity, hardness and infrared absorption. The third experiment coated a fiber glass beam shield incorporated in the eight-cm diameter mercury ion thruster with molybdenum to ensure proper electrical and thermal properties. The coating maintained its integrity even under acceleration tests.

  4. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  5. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  6. Molecular-beam scattering

    SciTech Connect

    Vernon, M.F.

    1983-07-01

    The molecular-beam technique has been used in three different experimental arrangements to study a wide range of inter-atomic and molecular forces. Chapter 1 reports results of a low-energy (0.2 kcal/mole) elastic-scattering study of the He-Ar pair potential. The purpose of the study was to accurately characterize the shape of the potential in the well region, by scattering slow He atoms produced by expanding a mixture of He in N/sub 2/ from a cooled nozzle. Chapter 2 contains measurements of the vibrational predissociation spectra and product translational energy for clusters of water, benzene, and ammonia. The experiments show that most of the product energy remains in the internal molecular motions. Chapter 3 presents measurements of the reaction Na + HCl ..-->.. NaCl + H at collision energies of 5.38 and 19.4 kcal/mole. This is the first study to resolve both scattering angle and velocity for the reaction of a short lived (16 nsec) electronic excited state. Descriptions are given of computer programs written to analyze molecular-beam expansions to extract information characterizing their velocity distributions, and to calculate accurate laboratory elastic-scattering differential cross sections accounting for the finite apparatus resolution. Experimental results which attempted to determine the efficiency of optically pumping the Li(2/sup 2/P/sub 3/2/) and Na(3/sup 2/P/sub 3/2/) excited states are given. A simple three-level model for predicting the steady-state fraction of atoms in the excited state is included.

  7. Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

    SciTech Connect

    Gonzalez-Arrabal, R.; Gonzalez, Y.; Gonzalez, L.; Martin-Gonzalez, M. S.; Munnik, F.

    2009-04-01

    We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 deg. C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn-InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO{sub 2} phase (nominally MnO{sub 1.94}) in the Mn-InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.

  8. LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

    SciTech Connect

    Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David; Hourani, Waeel; Plossu, Carole; Saint-Girons, Guillaume; Penuelas, Jose; Grenet, Genevieve; Hollinger, Guy

    2013-01-21

    A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.

  9. Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

    SciTech Connect

    Gammon, P. M.; Jennings, M. R.; Davis, M. C.; Roberts, G. J.; Covington, J. A.; Mawby, P. A.; Perez-Tomas, A.; Shah, V. A.; Burrows, S. E.; Wilson, N. R.; Boden, S. A.

    2010-06-15

    In this article, we report on the physical and electrical nature of Ge/SiC heterojunction layers that have been formed by molecular beam epitaxy (MBE) deposition. Using x-ray diffraction, atomic force microscopy, and helium ion microscopy, we perform a thorough analysis of how MBE growth conditions affect the Ge layers. We observe the layers developing from independent islands at thicknesses of 100 nm to flat surfaces at 300 nm. The crystallinity and surface quality of the layer is shown to be affected by the deposition parameters and, using a high temperature deposition and a light dopant species, the layers produced have large polycrystals and hence a low resistance. The p-type and n-type layers, 300 nm thick are formed into Ge/SiC heterojunction mesa diodes and these are characterized electrically. The polycrystalline diodes display near ideal diode characteristics (n<1.05), low on resistance and good reverse characteristics. Current-voltage (I-V) measurements at varying temperature prove that all the layers have two-dimensional fluctuations in the Schottky barrier height (SBH) due to inhomogeneities at the heterojunction interface. Capacitance-voltage analysis and the SBH size extracted from I-V analysis suggest strongly that interface states are present at the surface causing Fermi-level pinning throughout the bands. A simple model is used to quantify the concentration of interface states at the surface.

  10. Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition

    SciTech Connect

    Northrup, J.E.; Neugebauer, J.

    2004-10-18

    The stabilities of clean and hydrogen covered GaN(000-1) surfaces are determined using density functional theory together with a finite temperature thermodynamics approach. Hydrogen has an extremely high affinity for the N-face surface: Even under ultrahigh vacuum conditions as realized in molecular beam epitaxial growth, with a residual hydrogen pressure of 10{sup -12} atm, the hydrogen terminated surface is, for very N-rich conditions, more stable than any clean surface. A transition to a surface covered by a Ga adlayer is predicted to occur as the Ga chemical potential increases. In typical metalorganic chemical vapor deposition conditions the (000-1) surface is predicted to be covered by 0.75 monolayers of hydrogen. The slower growth rate on the (000-1) surface in comparison to the (0001) surface is attributed to low adsorption of N on the H-covered (000-1) surface.

  11. Molecular beam deposition of Dy sub 1 Ba sub 2 Cu sub 3 O sub 7 minus. delta. (001) high-temperature superconductor thin films

    SciTech Connect

    Bae, J.; Seshadri, P.; Choudhary, K.M. )

    1992-03-01

    Epitaxial Dy{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}(001) high-temperature superconductor thin films on LaAlO{sub 3} substrates have been prepared by coevaporation of Dy, BaF{sub 2}, and Cu and postannealing. The vapors in desired ratio were evaporated from effusion cells in a miniature molecular beam deposition system. The films show critical transition temperature ({ital T}{sub {ital c},0}) of 89.5{plus minus}0.5 K. During process development it was found that single phase Dy{sub 1+x}Ba{sub 2{minus}x}Cu{sub 3}O{sub y}(001) thin films can be grown ({ital x}=0 to 0.3). Their electrical properties were useful in calibration of quartz crystal thin film thickness monitor (FTM) for determination of relationships between the actual vapor arrival rate (flux) and FTM reading.

  12. Growth of 3C-SiC( 1 0 0 ) thin films on Si( 1 0 0 ) by the molecular ion beam deposition

    NASA Astrophysics Data System (ADS)

    Matsumoto, Takashi; Kiuchi, Masato; Sugimoto, Satoshi; Goto, Seiichi

    2001-11-01

    Silicon carbide (SiC) thin films were produced on Si(1 0 0) at low growth temperatures of 750-1000°C, using the molecular ion beam deposition (IBD) technique with a precursor of organosilicon ions. The ions extracted at 25 keV were mass selected, and decelerated to 100 eV. The precursor of methylsilicenium ions (SiCH 3+), which has a Si-C bond in the molecular structure, was generated from dimethylsilane (SiH 2(CH 3) 2). The energy distribution of SiCH 3+ ions was measured by a PPM421 plasma process monitor. It was confirmed that the energy distributions were 100±1 eV. The chemical bondings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction (RHEED). In the Raman spectrum, a peak at 796 cm -1 was assigned to transverse optic phonon scattering in 3C-SiC. As a result of the analysis of RHEED patterns, 3C-SiC(1 0 0) were formed on Si(1 0 0) substrates. Using the molecular IBD technique with the precursor of methylsilicenium ions, the formation of SiC thin films is available on Si(1 0 0) at low temperature (750°C).

  13. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  14. Photoelectron photoion molecular beam spectroscopy

    SciTech Connect

    Trevor, D.J.

    1980-12-01

    The use of supersonic molecular beams in photoionization mass spectroscopy and photoelectron spectroscopy to assist in the understanding of photoexcitation in the vacuum ultraviolet is described. Rotational relaxation and condensation due to supersonic expansion were shown to offer new possibilities for molecular photoionization studies. Molecular beam photoionization mass spectroscopy has been extended above 21 eV photon energy by the use of Stanford Synchrotron Radiation Laboratory (SSRL) facilities. Design considerations are discussed that have advanced the state-of-the-art in high resolution vuv photoelectron spectroscopy. To extend gas-phase studies to 160 eV photon energy, a windowless vuv-xuv beam line design is proposed.

  15. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  16. Laser annealing of laser assisted molecular beam deposited ZnO thin films with application to metal-semiconductor-metal photodetectors

    SciTech Connect

    Li Meiya; Anderson, Wayne; Chokshi, Nehal; De Leon, Robert L.; Tompa, Gary

    2006-09-01

    We report on the effect of postdeposition laser annealing of undoped zinc oxide (ZnO) thin films grown by laser assisted molecular beam deposition. Hall-effect measurements show that some undoped ZnO films change from n type with mobility values in the range of 200 cm{sup 2} V{sup -1} s{sup -1} to p-type material with mobility value of 73 cm{sup 2} V{sup -1} s{sup -1}, after laser annealing. The photoconductive behavior was clearly seen on the laser-annealed samples, with values of 0.28 m{omega}{sup -1}. The structural and optical properties of the films were improved with laser annealing as shown by scanning electron microscopy, x-ray photoelectron spectroscopy analysis, and photoluminescence measurement. All of the nonlaser and laser annealed samples showed near-band emission at {approx}3.3 eV. Metal-semiconductor-metal photodetectors were fabricated from the films.

  17. A photoluminescence comparison of CdTe thin films grown by molecular-beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum

    NASA Astrophysics Data System (ADS)

    Feng, Z. C.; Bevan, M. J.; Krishnaswamy, S. V.; Choyke, W. J.

    1988-09-01

    High perfection CdTe thin films have been grown on (001) InSb and CdTe substrates by molecular-beam epitaxy, metalorganic chemical vapor deposition (MOCVD), and sputtering in ultrahigh vacuum techniques. The quality of the as-grown CdTe films are characterized by 2-K photoluminescence. The spectra show strong and sharp exciton transitions and weak 1.40-1.50-eV defect-related bands. Radiative defect densities of lower than 0.002 are realized. High-resolution spectroscopy shows that the full width at half maximum of the principal bound exciton lines is about 0.1 meV. Such small ρ values and narrow photoluminescence lines have not been previously reported. The largest luminescence efficiency is observed for MOCVD-CdTe films grown on CdTe substrates. A variety of impurities appear to be responsible for the observed radiative transitions in these three kinds of CdTe films. We attempt to assign the observed impurity related lines by a comparison with ``known'' impurities in bulk CdTe spectra given in the literature.

  18. Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

    NASA Astrophysics Data System (ADS)

    Yang, Shu; Huang, Sen; Chen, Hongwei; Schnee, Michael; Zhao, Qing-Tai; Schubert, Jürgen; Chen, Kevin J.

    2011-10-01

    We report the study of high-dielectric-constant (high-κ) dielectric LaLuO3 (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin (˜2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 ± 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal a high effective dielectric constant of ˜28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.

  19. Core and grain boundary sensitivity of tungsten-oxide sensor devices by molecular beam assisted particle deposition

    NASA Astrophysics Data System (ADS)

    Huelser, T. P.; Lorke, A.; Ifeacho, P.; Wiggers, H.; Schulz, C.

    2007-12-01

    In this study, we investigate the synthesis of WO3 and WOx (2.6≥x≤2.8) by adding different concentrations of tungsten hexafluoride (WF6) into a H2/O2/Ar premixed flame within a low-pressure reactor equipped with a particle-mass spectrometer (PMS). The PMS results show that mean particle diameters dp between 5 and 9 nm of the as-synthesized metal-oxides can be obtained by varying the residence time and precursor concentration in the reactor. This result is further validated by N2 adsorption measurements on the particle surface, which yielded a 91 m2/g surface area, corresponding to a spherical particle diameter of 9 nm (Brunauer-Emmett-Teller technique). H2/O2 ratios of 1.6 and 0.63 are selected to influence the stoichiometry of the powders, resulting in blue-colored WOx and white WO3 respectively. X-ray diffraction (XRD) analysis of the as-synthesized materials indicates that the powders are mostly amorphous, and the observed broad reflexes can be attributed to the orthorhombic structure of β-WO3. Thermal annealing at 973 K for 3 h in air resulted in crystalline WO3 comprised of both monoclinic and orthorhombic phases. The transmission electron microscope micrograph analysis shows that the particles exhibit spherical morphology with some degree of agglomeration. Impedance spectroscopy is used for the electrical characterization of tungsten-oxide thin films with a thickness of 50 nm. Furthermore, the temperature-dependent gas-sensing properties of the material deposited on interdigital capacitors are investigated. Sensitivity experiments reveal two contributions to the overall sensitivity, which result from the surface and the core of each particle.

  20. Ion beam sputter deposited diamond like films

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Rutledge, S. K.

    1982-01-01

    A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

  1. Molecular Models for DSMC Simulations of Metal Vapor Deposition

    SciTech Connect

    Venkattraman, A.; Alexeenko, A. A.

    2011-05-20

    The direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam (e-beam) physical vapor deposition of copper thin films. A suitable molecular model for copper-copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi-symmetric DSMC simulations for analysis of a typical e-beam metal deposition system with a cup crucible. The dimensional and non-dimensional mass fluxes obtained are compared for two different deposition configurations with non-uniformity as high as 40% predicted from the simulations.

  2. Microfabricated cantilever-based detector for molecular beam experiments

    NASA Astrophysics Data System (ADS)

    Bachels, T.; Schäfer, R.

    1998-11-01

    A low cost detector for particles in molecular beam experiments is presented which can easily be mounted in a molecular beam apparatus. The detector is based on microfabricated cantilevers, which can be employed either as single sensors or as sensor arrays. The single cantilever technique has been used to measure the absolute number of atoms coming out of a pulsed laser vaporization cluster source. The particles are detected by the shift of the thermally excited resonance frequency of the cantilever due to the cluster deposition. We have determined with the single cantilever the ratio of neutral to ionized clusters and we have investigated the cluster generation at different source conditions. In addition to this, a microfabricated cantilever array has been used to measure molecular beam profiles, which opens new possibilities for molecular beam deflection experiments.

  3. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  4. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-09-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation & dynamics; and surfaces.

  5. 14th international symposium on molecular beams

    SciTech Connect

    Not Available

    1992-01-01

    This report discusses research being conducted with molecular beams. The general topic areas are as follows: Clusters I; reaction dynamics; atomic and molecular spectroscopy; clusters II; new techniques; photodissociation dynamics; and surfaces.

  6. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  7. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  8. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  9. Investigation on the electrical transport properties of highly (00l)-textured Sb{sub 2}Te{sub 3} films deposited by molecular beam epitaxy

    SciTech Connect

    Zhang, Xiangpeng; Zeng, Zhigang E-mail: zhiyuhu@shu.edu.cn; Shen, Chao; Wang, Zhichong; Lin, Cong; Zhang, Ziqiang; Hu, Zhiyu E-mail: zhiyuhu@shu.edu.cn

    2014-01-14

    Highly (00l)-textured antimony telluride films were fabricated using molecular beam epitaxy (MBE) on Si (111) substrate at 280 °C. X-ray diffraction analysis implying the samples have good crystalline quality, simultaneously, the grain sizes coarsening with increasing thickness. The results of Hall coefficient measurement demonstrated that the carrier concentration and mobility are strongly affected by grain boundaries and microcrystalline internal defects. It was found that the grain boundaries play a primary factor influencing the carrier concentration in thinner film. At room temperature, the results in a maximum mobility value of 305 cm{sup 2}/Vs for 121-nm-thick film, and the electrical conductivity increased from 425.7 S/cm to 1036 S/cm as the thickness varied from 28 nm to 121 nm. In the range of room temperature to 150 °C, the resistivity almost linearly increased with increasing temperature. This may be explained by low concentration of impurities or defects and shallow impurity band. For difference thickness films, temperature coefficients of resistivity are substantially equal, and the values are about 3 ∼ 4 μΩ⋅cm/K.

  10. Dual ion beam assisted deposition of biaxially textured template layers

    DOEpatents

    Groves, James R.; Arendt, Paul N.; Hammond, Robert H.

    2005-05-31

    The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.

  11. An Introduction to the Supersonic Molecular Beam Injection

    NASA Astrophysics Data System (ADS)

    Wang, En-yao

    2001-04-01

    Recently a new fuelling method with supersonic molecular beam injection (MBI) has been developed and used in the tokamaks experiments successfully. It is economical to develop and maintain. The advantages of supersonic MBI compared with the conventional of gas-puffing method are as follows: Deep deposition of fuel, better fuelling efficiency, reduced recycling and pure plasma. Particle and energy confinement can be improved and density limit extended. This review described the Laval nozzle molecular beam and a simple collective model for the injection of a supersonic MBI into the tokamak plasma.

  12. Focused electron beam induced deposition of pure SIO II

    NASA Astrophysics Data System (ADS)

    Perentes, Alexandre; Hoffmann, Patrik; Munnik, Frans

    2007-02-01

    Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO) 4 molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO II. The chemical composition of the FEBID material could be controlled from SiC IINO 3 to SiO II, the latter containing undetectable foreign element contamination. The [O II] / [TICS] ratio needed to obtain SiO II in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O II] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO II pads (obtained with [O II] / [TICS] = 325) showed an undetectable light absorption.

  13. Molecular beams: our legacy from Otto Stern

    NASA Astrophysics Data System (ADS)

    Ramsey, N. F.

    1988-06-01

    It is an honor to contribute to this celebration of the hundredth anniversary of the birth of Otto Stern, who developed molecular beams to become one of the most nowerful and fruitful physics research methods.

  14. Focused electron beam induced deposition: A perspective

    PubMed Central

    Porrati, Fabrizio; Schwalb, Christian; Winhold, Marcel; Sachser, Roland; Dukic, Maja; Adams, Jonathan; Fantner, Georg

    2012-01-01

    Summary Background: Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade. In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique is now particularly attractive for several areas in both, basic and applied research. The present topical review addresses selected examples that highlight this development in the areas of charge-transport regimes in nanogranular metals close to an insulator-to-metal transition, the use of these materials for strain- and magnetic-field sensing, and the prospect of extending FEBID to multicomponent systems, such as binary alloys and intermetallic compounds with cooperative ground states. Results: After a brief introduction to the technique, recent work concerning FEBID of Pt–Si alloys and (hard-magnetic) Co–Pt intermetallic compounds on the nanometer scale is reviewed. The growth process in the presence of two precursors, whose flux is independently controlled, is analyzed within a continuum model of FEBID that employs rate equations. Predictions are made for the tunability of the composition of the Co–Pt system by simply changing the dwell time of the electron beam during the writing process. The charge-transport regimes of nanogranular metals are reviewed next with a focus on recent theoretical advancements in the field. As a case study the transport properties of Pt–C nanogranular FEBID structures are discussed. It is shown that by means of a post-growth electron-irradiation treatment the electronic intergrain-coupling strength can be continuously tuned over a wide range. This provides unique access to the transport properties of this material close to the insulator-to-metal transition. In the last part of the review, recent developments in mechanical strain

  15. Electron beam deposition for nanofabrication: Insights from surface science

    NASA Astrophysics Data System (ADS)

    Wnuk, J. D.; Rosenberg, S. G.; Gorham, J. M.; van Dorp, W. F.; Hagen, C. W.; Fairbrother, D. H.

    2011-02-01

    Electron beam induced deposition (EBID) is a direct-write lithographic technique that utilizes the dissociation of volatile precursors by a focused electron beam in a low vacuum environment to create nanostructures. Notable advantages of EBID over competing lithographic techniques are that it is a single step process that allows three-dimensional free-standing structures to be created, including features with single-nanometer scale dimensions. However, despite the inherent advantages of EBID, scientific and technological issues are impeding its development as an industrial nanofabrication tool. Perhaps the greatest single limitation of EBID is that metal-containing nanostructures deposited from organometallic precursors typically possess unacceptable levels of organic contamination which adversely affects the material's properties. In addition to the issue of purity, there is also a lack of understanding and quantitative information on the fundamental surface reactions and reaction cross-sections that are responsible for EBID. In this prospective, we describe how surface analytical techniques have begun to provide mechanistic and kinetic insights into the molecular level processes associated with EBID. This has been achieved by observing the effect of electron irradiation on nanometer thick films of organometallic precursors adsorbed onto solid substrates at low temperatures (< 200 K) under ultra-high vacuum conditions. Experimental observations include probing changes in surface composition, metal oxidation state, and the evolution of volatile species. Insights into surface reactions associated with purification strategies are also detailed. We also discuss unresolved scientific challenges and opportunities for future EBID research.

  16. Comparison of electrical properties and deep traps in p-Al{sub x}Ga{sub 1-x}N grown by molecular beam epitaxy and metal organic chemical vapor deposition

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

    2009-10-01

    The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

  17. Multi-purpose InGaAsP buried heterostructure laser diodes for uncooled digital, analog, and wireless applications grown by molecular beam epitaxy and metal-organic chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Pickrell, G. W.; Zhang, H. L.; Ren, H. W.; Zhang, D.; Xue, Q.; Um, J.; Lin, H. C.; Anselm, K. A.; Makino, T.; Hwang, W. Y.

    2009-02-01

    Using a combination of molecular beam epitaxy (MBE) and metal-organic, chemical-vapor deposition (MOCVD), highperformance, buried-heterostructure, distributed feedback (DFB), laser diodes are being manufactured for multiple, uncooled (-20 to 85 °C and -40 to 95 °C) product lines. MBE is used to grow the active regions and the p-type cladding layers, while MOCVD is used for the Fe-doped blocking layers. Multi-wafer growths are used to reduce device costs. Devices, employing the same basic active region design, have been fabricated operating at wavelengths from 1490 to 1610 nm for applications including coarse wavelength division multiplexing (CWDM) OC-48 digital, analog return path, and 2.2 GHz (3G) wireless code division multiple access (W-CDMA). These devices show good linearity (analog return path and wireless) and high-speed operation (digital). Accelerated lifetime testing of these devices shows excellent reliability with a median lifetime of 17 years at 90 °C.

  18. High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices

    NASA Astrophysics Data System (ADS)

    Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Chien Liu, Shin; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-05-01

    High-κ cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance–voltage (C–V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C–V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D it) was calculated to be 5.5 × 1011 eV‑1 cm‑2 at 150 °C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I ON/I OFF) of 1.14 × 109, and a low gate leakage current density (J leakage) of 2.85 × 10‑9 A cm‑2 with an improved dynamic ON-resistance (R ON), which is about one order of magnitude lower than that of a conventional HEMT.

  19. Patterned electrochemical deposition of copper using an electron beam

    SciTech Connect

    Heijer, Mark den; Shao, Ingrid; Reuter, Mark C.; Ross, Frances M.; Radisic, Alex

    2014-02-01

    We describe a technique for patterning clusters of metal using electrochemical deposition. By operating an electrochemical cell in the transmission electron microscope, we deposit Cu on Au under potentiostatic conditions. For acidified copper sulphate electrolytes, nucleation occurs uniformly over the electrode. However, when chloride ions are added there is a range of applied potentials over which nucleation occurs only in areas irradiated by the electron beam. By scanning the beam we control nucleation to form patterns of deposited copper. We discuss the mechanism for this effect in terms of electron beam-induced reactions with copper chloride, and consider possible applications.

  20. Molecular-beam spectroscopy of interhalogen molecules

    SciTech Connect

    Sherrow, S.A.

    1983-08-01

    A molecular-beam electric-resonance spectrometer employing a supersonic nozzle source has been used to obtain hyperfine spectra of /sup 79/Br/sup 35/Cl. Analyses of these spectra and of microwave spectra published by other authors have yielded new values for the electric dipole moment and for the nuclear quadrupole coupling constants in this molecule. The new constants are significantly different from the currently accepted values. Van der Waals clusters containing chlorine monofluoride have been studied under various expansion conditions by the molecular-beam electric-deflection method. The structural possibilities indicated by the results are discussed, and cluster geometries are proposed.

  1. Molecular beam mass spectrometer development

    NASA Technical Reports Server (NTRS)

    Brock, F. J.; Hueser, J. E.

    1976-01-01

    An analytical model, based on the kinetics theory of a drifting Maxwellian gas is used to determine the nonequilibrium molecular density distribution within a hemispherical shell open aft with its axis parallel to its velocity. The concept of a molecular shield in terrestrial orbit above 200 km is also analyzed using the kinetic theory of a drifting Maxwellian gas. Data are presented for the components of the gas density within the shield due to the free stream atmosphere, outgassing from the shield and enclosed experiments, and atmospheric gas scattered off a shield orbiter system. A description is given of a FORTRAN program for computating the three dimensional transition flow regime past the space shuttle orbiter that employs the Monte Carlo simulation method to model real flow by some thousands of simulated molecules.

  2. MCNPX benchmark of in-beam proton energy deposition

    SciTech Connect

    Corzine, K.; Ferguson, P.; Morgan, G.; Quintana, D.; Waters, L.; Cooper, R.; Liljestrand, R.; Whiteson, A.

    2000-07-01

    The MCNPX code is being used to calculate energy deposition in the accelerator production of tritium (APT) target/blanket system components. To ensure that these components are properly designed, the code must be validated. An energy deposition experiment was designed to aid in the code validation using thermocouple sensors in-beam and thermistor-type sensors in decoupler- and blanketlike regions. This paper focuses on the in-beam thermocouple sensors.

  3. An autoneutralizing neutral molecular beam gun

    SciTech Connect

    Delmore, J.E.; Appelhans, A.D.; Dahl, D.A. )

    1990-01-01

    A high-energy (up to 28 keV) neutral molecular beam gun has been developed and put into routine use that takes advantage of the autoneutralization properties of the sulfur hexafluoride anion for the production of high-energy sulfur hexafluoride neutral molecules. The anions are produced in an electron-capture source, accelerated, and focused in a lens assembly designed to minimize residence time, allowed to drift at their terminal velocity for a suitable distance during which up to 30% auto-eject an electron, and all remaining charged particles are electrostatically skimmed, resulting in a focused neutral beam. Rasterable neutral beams focused to a 5-mm spot size up to 3 m from the source have been produced with beam currents up to 40 pA equivalent. Spot sizes of 1 mm can be produced with intensity levels of a few picoamperes equivalent.

  4. Zeeman-Sisyphus Deceleration of Molecular Beams

    NASA Astrophysics Data System (ADS)

    Fitch, Noah; Tarbutt, Mike

    2016-05-01

    Ultracold molecules are useful for testing fundamental physics and studying strongly-interacting quantum systems. One production method is via direct laser cooling in a magneto-optical trap (MOT). In this endeavor, one major challenge is to produce molecules below the MOT capture velocity. Established molecular beam deceleration techniques are poorly suited because they decelerate only a small fraction of a typical molecular pulse. Direct laser cooling is a natural choice, but is also problematic due to transverse heating and the associated molecule loss. I will present a new technique that we are developing, which we call Zeeman-Sisyphus deceleration and which shows great promise for preparing molecular beams for MOT loading. This technique decelerates molecules using a linear array of permanent magnets, along with lasers that periodically optically pump molecules between weak and strong-field seeking quantum states. Being time-independent, this method is well-suited for temporally extended molecular beams. Simultaneous deceleration and transverse guiding makes this approach attractive as an alternative to direct laser cooling. I will present our development of the Zeeman-Sisyphus decelerator and its application to a molecular MOT of CaF and an ultracold fountain of YbF.

  5. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.

  6. Calculation of neutral beam deposition accounting for excited states

    SciTech Connect

    Gianakon, T.A.

    1992-09-01

    Large-scale neutral-beam auxillary heating of plasmas has led to new plasma operational regimes which are often dominated by fast ions injected via the absorption of an energetic beam of hydrogen neutrals. An accurate simulation of the slowing down and transport of these fast ions requires an intimate knowledge of the hydrogenic neutral deposition on each flux surface of the plasma. As a refinement to the present generation of transport codes, which base their beam deposition on ground-state reaction rates, a new set of routines, based on the excited states of hydrogen, is presented as mechanism for computing the attenuation and deposition of a beam of energetic neutrals. Additionally, the numerical formulations for the underlying atomic physics for hydrogen impacting on the constiuent plasma species is developed and compiled as a numerical database. Sample results based on this excited state model are compared with the ground-state model for simple plasma configurations.

  7. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  8. Physics with fast molecular-ion beams

    SciTech Connect

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented.

  9. Molecular-beam gas-sampling system

    NASA Technical Reports Server (NTRS)

    Young, W. S.; Knuth, E. L.

    1972-01-01

    A molecular beam mass spectrometer system for rocket motor combustion chamber sampling is described. The history of the sampling system is reviewed. The problems associated with rocket motor combustion chamber sampling are reported. Several design equations are presented. The results of the experiments include the effects of cooling water flow rates, the optimum separation gap between the end plate and sampling nozzle, and preliminary data on compositions in a rocket motor combustion chamber.

  10. Direct simulation Monte Carlo modeling of e-beam metal deposition

    SciTech Connect

    Venkattraman, A.; Alexeenko, A. A.

    2010-07-15

    Three-dimensional direct simulation Monte Carlo (DSMC) method is applied here to model the electron-beam physical vapor deposition of copper thin films. Various molecular models for copper-copper interactions have been considered and a suitable molecular model has been determined based on comparisons of dimensional mass fluxes obtained from simulations and previous experiments. The variable hard sphere model that is determined for atomic copper vapor can be used in DSMC simulations for design and analysis of vacuum deposition systems, allowing for accurate prediction of growth rates, uniformity, and microstructure.

  11. A molecular view of vapor deposited glasses

    SciTech Connect

    Singh, Sadanand; Pablo, Juan J. de

    2011-05-21

    Recently, novel organic glassy materials that exhibit remarkable stability have been prepared by vapor deposition. The thermophysical properties of these new ''stable'' glasses are equivalent to those that common glasses would exhibit after aging over periods lasting thousands of years. The origin of such enhanced stability has been elusive; in the absence of detailed models, past studies have discussed the formation of new polyamorphs or that of nanocrystals to explain the observed behavior. In this work, an atomistic molecular model of trehalose, a disaccharide of glucose, is used to examine the properties of vapor-deposited stable glasses. Consistent with experiment, the model predicts the formation of stable glasses having a higher density, a lower enthalpy, and higher onset temperatures than those of the corresponding ''ordinary'' glass formed by quenching the bulk liquid. Simulations reveal that newly formed layers of the growing vapor-deposited film exhibit greater mobility than the remainder of the material, thereby enabling a reorganization of the film as it is grown. They also reveal that ''stable'' glasses exhibit a distinct layered structure in the direction normal to the substrate that is responsible for their unusual properties.

  12. Use of beam deflection to control an electron beam wire deposition process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hofmeister, William H. (Inventor); Hafley, Robert A. (Inventor)

    2013-01-01

    A method for controlling an electron beam process wherein a wire is melted and deposited on a substrate as a molten pool comprises generating the electron beam with a complex raster pattern, and directing the beam onto an outer surface of the wire to thereby control a location of the wire with respect to the molten pool. Directing the beam selectively heats the outer surface of the wire and maintains the position of the wire with respect to the molten pool. An apparatus for controlling an electron beam process includes a beam gun adapted for generating the electron beam, and a controller adapted for providing the electron beam with a complex raster pattern and for directing the electron beam onto an outer surface of the wire to control a location of the wire with respect to the molten pool.

  13. Silicon nitride films deposited with an electron beam created plasma

    NASA Astrophysics Data System (ADS)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-03-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  14. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    NASA Technical Reports Server (NTRS)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  15. Nanopillar growth by focused helium ion-beam-induced deposition.

    PubMed

    Chen, Ping; van Veldhoven, Emile; Sanford, Colin A; Salemink, Huub W M; Maas, Diederik J; Smith, Daryl A; Rack, Philip D; Alkemade, Paul F A

    2010-11-12

    A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH(3))(3)Pt(C(P)CH(3)) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars grown at low beam currents are narrow and have sharp tips. For a constant dose, the pillar height decreases with increasing current, pointing to depletion of precursor molecules at the beam impact site. Furthermore, the diameter increases rapidly and the total pillar volume decreases slowly with increasing current. Monte Carlo simulations have been performed with realistic values for the fundamental deposition processes. The simulation results are in good agreement with experimental observations. In particular, they reproduce the current dependences of the vertical and lateral growth rates and of the volumetric deposition efficiency. Furthermore, the simulations reveal that the vertical pillar growth is due to type-1 secondary electrons and primary ions, while the lateral outgrowth is due to type-2 secondary electrons and scattered ions. PMID:20947951

  16. Superconducting nanowires by electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Sengupta, Shamashis; Li, Chuan; Baumier, Cedric; Kasumov, Alik; Guéron, S.; Bouchiat, H.; Fortuna, F.

    2015-01-01

    Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often result from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work is an important development for the template-free realization of nanoscale superconducting devices, without the requirement of an ion beam column.

  17. Superconducting nanowires by electron-beam-induced deposition

    SciTech Connect

    Sengupta, Shamashis; Li, Chuan; Guéron, S.; Bouchiat, H.; Baumier, Cedric; Fortuna, F.; Kasumov, Alik

    2015-01-26

    Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often result from the exposure to the ion beam, motivating the search for a means to achieve similar structures with a beam of electrons instead of ions. This has so far remained an experimental challenge. We report the fabrication of superconducting tungsten nanowires by electron-beam-induced-deposition, with critical temperature of 2.0 K and critical magnetic field of 3.7 T, and compare them with superconducting wires made with ions. This work is an important development for the template-free realization of nanoscale superconducting devices, without the requirement of an ion beam column.

  18. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  19. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  20. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1987-03-01

    Purpose of this research project is two-fold: (1) to elucidate detailed dynamics of simple elementary reactions which are theoretically important and to unravel the mechanism of complex chemical reactions or photo chemical processes which play an important role in many macroscopic processes and (2) to determine the energetics of polyatomic free radicals using microscopic experimental methods. Most of the information is derived from measurement of the product fragment translational energy and angular distributions using unique molecular beam apparati designed for these purposes.

  1. Perspective: Oxide molecular-beam epitaxy rocks!

    NASA Astrophysics Data System (ADS)

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the "gold standard" synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  2. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  3. PHOTOELECTRON SPECTROSCOPY OF SUPERSONIC MOLECULAR BEAMS

    SciTech Connect

    Pollard, J.E.; Trevor, D.J.; Lee, Y.T.; Shirley, D.A.

    1981-06-01

    We report the development of an instrument for gas-phase ultraviolet photoelectron spectroscopy which opens several new areas for study through use of the supersonic molecular beam technique. The key features in which we have sought an improvement on earlier spectrometer designs are (1) the optimization of electron energy resolution and sensitivity, (2) vacuum isolation, and (3) the capability for mass spectrometric analysis. Our principal interests are in the high resolution spectroscopy of small molecules and in studies of weakly bound complexes formed under collisionless conditions. As shown in Fig. 1 the apparatus is essentially a molecular beam chamber with allowance for access by a beam source, an electron energy analyzer, and a quadrupole mass spectrometer. These three plug-in units are equipped with individual differential pumping systems. The photon source is a rare-gas resonance lamp which may be directed toward the molecular beam either 90{sup o} or 54.7{sup o} from the direction of electron collection. Electrons which pass through entrance aperture are transported by a series of electrostatic lenses to a 90{sup o} spherical sector pre-analyzer (R{sub 0} = 3.8 cm) and then on to a 180{sup o} hemispherical analyzer (R{sub 0} = 10.2 cm). The detector consists of a microchannel plate electron multiplier (40 mm diam.) with a resistive-anode position encoder. The function of the pre-analyzer is to improve the signal-to-noise ratio by reducing the background of scattered electrons incident upon the microchannel plate. The electron optical system is designed such that the energy bandpass (FWHN) leaving the pre-analyzer just fills the energy window presented by the multichannel detector. The multichannel capability of this analyzer is very advantageous for working with the rather low number density (< 10{sup 13} cm{sup -3}) of molecular beam samples, since the data collection rate is improved by more than an order of magnitude over single channel operation. To

  4. Electron Beam Freeform Fabrication: A Rapid Metal Deposition Process

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. B.; Hafley, Robert A.

    2003-01-01

    Manufacturing of structural metal parts directly from computer aided design (CAD) data has been investigated by numerous researchers over the past decade. Researchers at NASA Langley REsearch Center are developing a new solid freeform fabrication process, electron beam freeform fabrication (EBF), as a rapid metal deposition process that works efficiently with a variety of weldable alloys. The EBF process introduces metal wire feedstock into a molten pool that is created and sustained using a focused electron beam in a vacuum environment. Thus far, this technique has been demonstrated on aluminum and titanium alloys of interest for aerospace structural applications nickel and ferrous based alloys are also planned. Deposits resulting from 2219 aluminum demonstrations have exhibited a range of grain morphologies depending upon the deposition parameters. These materials ave exhibited excellent tensile properties comparable to typical handbook data for wrought plate product after post-processing heat treatments. The EBF process is capable of bulk metal deposition at deposition rated in excess of 2500 cubic centimeters per hour (150 cubic inches per our) or finer detail at lower deposition rates, depending upon the desired application. This process offers the potential for rapidly adding structural details to simpler cast or forged structures rather than the conventional approach of machining large volumes of chips to produce a monolithic metallic structure. Selective addition of metal onto simpler blanks of material can have a significant effect on lead time reduction and lower material and machining costs.

  5. Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

    SciTech Connect

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. ); Tanaka, S.; Yamada, A.; Yamada, I. . Ion Beam Engineering Lab.)

    1990-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

  6. Site control technique for quantum dots using electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  7. Site control technique for quantum dots using electron beam induced deposition

    SciTech Connect

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  8. Molecular dynamics and quasidynamics simulations of the annealing of bulk and near-surface interstitials formed in molecular-beam epitaxial Si due to low-energy particle bombardment during deposition

    NASA Technical Reports Server (NTRS)

    Kitabatake, M.; Fons, P.; Greene, J. E.

    1991-01-01

    The relaxation, diffusion, and annihilation of split and hexagonal interstitials resulting from 10 eV Si irradiation of (2x1)-terminated Si(100) are investigated. Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential are used in the investigation. The interstitials are created in layers two through six, and stable atomic configurations and total potential energies are derived as a function of site symmetry and layer depth. The interstitial Si atoms are allowed to diffuse, and the total potential energy changes are calculated. Lattice configurations along each path, as well as the starting configurations, are relaxed, and minimum energy diffusion paths are derived. The results show that the minimum energy paths are toward the surface and generally involved tetrahedral sites. The calculated interstitial migration activation energies are always less than 1.4 eV and are much lower in the near-surface region than in the bulk.

  9. Electrostatic particle trap for ion beam sputter deposition

    DOEpatents

    Vernon, Stephen P.; Burkhart, Scott C.

    2002-01-01

    A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

  10. Studies of the mechanism of electron beam induced deposition (EBID)

    NASA Astrophysics Data System (ADS)

    Choi, Young Ryong

    The controlled deposition of metals resulting from the passage of an ion beam through an atmosphere of a suitable precursor gas is a well-established procedure for micro scale materials manipulation. While the ion beam technique is rapid and reliable it has the disadvantage that the beam itself can ablate and contaminate the target with Gallium or other materials, and the fact that ion optics are less widely accessible than electron optical columns. We have therefore been investigating the theory and practice of depositing metal using an electron beam and variety of precursor gases. The aim of this work is to develop techniques that can be applied to the repair of the optical, ultra-violet (UV) and extreme ultra-violet (EUV) masks used in high performance photo-lithography. This thesis is concentrated on electron beam induced deposition (EBID) performed in a commercial Scanning Electron Microscope (SEM). For EBID experiments, we have developed a gas injection system for the specimen chamber of a standard SEM which is able to control the pressure and the delivery flow rate of gas for experiment. Studies of factors that control the properties of the deposition---such as the electron-gas interactions, the effects of gas pressure, and the temperature of the substrate---have been made and experiments to determine the fundamental mechanisms of EBID---such as which types of electrons are responsible for the initial interaction event with the precursor---have been carried out and analyzed and systematically studied to determine the optimum conditions for the practical application of the EBID approach. Finally the practical applications of the EBID have been applied to repair of masks.

  11. Beam-Induced Deposition of Thin Metallic Films.

    NASA Astrophysics Data System (ADS)

    Funsten, Herbert Oliver, III

    1990-01-01

    Ion and electron beam induced deposition (BID) of thin (1 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas. Current research has focused primarily on room temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low temperature (50 to 200 K) BID in which the condensation of the precursor gases (SnCl _4 and (CH_3) _4Sn) maximizes the efficiency of the incident radiation which can create and remove nonmetallic fragments located several monolayers below the film surface. The desired properties of the residual metallic films are produced by using as incident radiation either nuclear (35 keV Ar ^+) or electronic (2 keV electrons, 25 keV H^+, or 50 keV H ^+) energy loss mechanisms. Residual films are analyzed ex situ by Scanning Electron Microscopy (SEM), thickness measurements, resistivity measurements, Rutherford Backscattering Spectroscopy (RBS), and infrared spectroscopy. Low temperature BID film growth models, which are derived from both a computer simulation and a mathematical analysis, closely agree. Both the fragmentation and sputtering cross sections for a particular ion and energy are derived for films created from (CH_3) _4Sn. The fragmentation cross section, which corresponds to film growth, is roughly related to the electronic stopping power by the 1.9 power. The loss of carbon in films which were created from (CH_3) _4Sn is strongly dependent on the nuclear stopping power. Film growth rates for low temperature BID have been found to be 10 times those of room temperature BID.

  12. Twenty years of molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  13. Molecular contamination study by interaction of a molecular beam with a platinum surface

    NASA Technical Reports Server (NTRS)

    Nuss, H. E.

    1976-01-01

    The capability of molecular beam scattering from a solid surface is analyzed for identification of molecular contamination of the surface. The design and setup of the molecular beam source and the measuring setup for the application of a phase sensitive measuring technique for the determination of the scattered beam intensity are described. The scattering distributions of helium and nitrogen molecular beams interacting with a platinum surface were measured for different amounts of contamination from diffusion pump oil for surface temperatures ranging from 30 to 400 C. The results indicate the scattering of molecular beams from a platinum surface is a very sensitive method for detecting surface contamination.

  14. Hydrogen removal from e-beam deposited alumina thin films by oxygen ion beam

    SciTech Connect

    Das, Arijeet Mukharjee, C. Rajiv, K. Bose, Aniruddha Singh, S. D. Rai, S. K.; Ganguli, Tapas; Joshi, S. C.; Deb, S. K.; Phase, D. M.

    2014-04-24

    Hydrogen interstitials and oxygen vacancies defects create energy levels in the band gap of alumina. This limits the application of alumina as a high-k dielectric. A low thermal budget method for removal of hydrogen from alumina is discussed. It is shown that bombardment of alumina films with low energy oxygen ion beam during electron beam evaporation deposition decreases the hydrogen concentration in the film significantly.

  15. Molecular sputter depth profiling using carbon cluster beams

    PubMed Central

    Winograd, Nicholas

    2010-01-01

    Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C60q+ cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique. PMID:19649771

  16. An investigation of nonuniform dose deposition from an electron beam

    NASA Astrophysics Data System (ADS)

    Lilley, William; Luu, Kieu X.

    1994-08-01

    In a search for an explanation of nonuniform electron-beam dose deposition, the integrated tiger series (ITS) of coupled electron/photon Monte Carlo transport codes was used to calculate energy deposition in the package materials of an application-specific integrated circuit (ASIC) while the thicknesses of some of the materials were varied. The thicknesses of three materials that were in the path of an electron-beam pulse were varied independently so that analysis could determine how the radiation dose measurements using thermoluminescent dosimeters (TLD's) would be affected. The three materials were chosen because they could vary during insertion of the die into the package or during the process of taking dose measurements. The materials were aluminum, HIPEC (a plastic), and silver epoxy. The calculations showed that with very small variations in thickness, the silver epoxy had a large effect on the dose uniformity over the area of the die.

  17. Molecular beam studies of stratospheric photochemistry

    NASA Astrophysics Data System (ADS)

    Moore, Teresa Anne

    1998-12-01

    Photochemistry of chlorine oxide containing species plays a major role in stratospheric ozone depletion. This thesis discusses two photodissociation studies of the key molecules ClONO2 and ClOOCl which were previously thought to only produce Cl-atom (ozone depleting) products at wavelengths relevant to the stratosphere. The development of a molecular beam source of ClOOCl and the photodissociation dynamics of the model system Cl2O are also discussed. In the first chapter, the photochemistry of ClONO2 is examined at 308 nm using the technique of photofragment translational spectroscopy. Two primary decomposition pathways, leading to Cl + NO3 and ClO + NO2, were observed, with a lower limit of 0.33 for the relative yield of ClO. The angular distributions for both channels were anisotropic, indicating that the dissociation occurs within a rotational period. Chapter two revisits the photodissociation dynamics of Cl2O at 248 and 308 nm, on which we had previously reported preliminary findings. At 248 nm, three distinct dissociation pathways leading to Cl + ClO products were resolved. At 308 nm, the angular distribution was slightly more isotropic that previously reported, leaving open the possibility that Cl2O excited at 308 nm lives longer than a rotational period. Chapter three describes the development and optimization of a molecular beam source of ClOOCl. We utilized pulsed laser photolysis of ClA2O to generate ClO radicals, and cooled the cell to promote three body recombination to form ClOOCl. The principal components in the beam were Cl2, Cl2O, and ClOOCl. In the fourth chapter, the photodissociation dynamics of ClOOCl are investigated at 248 and 308 nm. We observed multiple dissociation pathways which produced ClO + ClO and 2Cl + O2 products. The relative Cl:ClO product yields are 1.0:0.13 and 1.0:0.20 for ClOOCl photolysis at 248 and 308 nm, respectively. The upper limit for the relative yield of the ClO + ClO channel was 0.19 at 248 nm and 0.31 at 308 nm

  18. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  19. Anomalous scaling behavior and surface roughening in molecular thin-film deposition

    SciTech Connect

    Yim, S.; Jones, T. S.

    2006-04-15

    The thin film growth dynamics of a molecular semiconductor, free-base phthalocyanine (H{sub 2}Pc), deposited by organic molecular beam deposition, has been studied by atomic force microscopy (AFM) and height difference correlation function (HDCF) analysis. The measured dynamic scaling components ({alpha}{sub loc}=0.61{+-}0.12, {beta}=1.02{+-}0.08, and 1/z=0.72{+-}0.13) are consistent with rapid surface roughening and anomalous scaling behavior. A detailed analysis of AFM images and simple growth models suggest that this behavior arises from the pronounced upward growth of crystalline H{sub 2}Pc mounds during the initial stages of thin film growth.

  20. Rapid tooling by electron-beam vapor deposition

    SciTech Connect

    Meier, T. C., LLNL

    1998-02-25

    Electron-beam physical vapor deposition (EBPVD) of tooling metal, onto a shaped substrate to produce a replica of the substrate surface, offers the potential for significant cost savings over present methods of injection mold manufacturing. These savings are realized by the high deposition rate and the corresponding short manufacturing times provided by the EBPVD process. However, on route to realizing these gains, there are process technical issues which need to be resolved. Mold surfaces typically contain relatively high aspect ratio details that must be replicated to dimensional tolerances within +/- 2 mils. The deposited mold material must also provide high surface hardness and high fracture toughness. Good quality grain structure can be obtained in deposited Al 10-wt% Cu mold material when the substrate and corresponding deposit are at high process temperature. However, the resulting mold is subject to distortion during cooldown due to differential temperatures and shrinkage rates. Thermally controlled cooldown and the use of crushable substrate materials reduce these distortions, but not to the required levels of tolerance. Deposition of the Al-Cu at lower temperature produces columnar, poorly joined grains which result in a brittle and weakened mold material. When Al 10-wt% Cu metal vapor is deposited across high aspect ratio step features on the substrate surface, a grain growth defect can form in the step-shadowed regions of the deposited material, alongside the step feature. The step coverage defect consists of entrained voids which persist at intermediate deposition temperatures and produce a weakened mold. This final 1997 LDRD report investigates causes of this step coverage defect and offers methods for their control and elimination.

  1. An optimized nanoparticle separator enabled by electron beam induced deposition.

    PubMed

    Fowlkes, J D; Doktycz, M J; Rack, P D

    2010-04-23

    Size-based separations technologies will inevitably benefit from advances in nanotechnology. Direct-write nanofabrication provides a useful mechanism for depositing/etching nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam-interaction region. Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub-50 nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular-sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects) and (2) preserved the fidelity of the spacing between nanopillars (which maximizes the size-based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing. PMID:20351412

  2. An Optimized Nanoparticle Separator Enabled by Electron Beam Induced Deposition

    SciTech Connect

    Fowlkes, Jason Davidson; Doktycz, Mitchel John; Rack, P. D.

    2010-01-01

    Size based separations technologies will inevitably benefit from advances in nanotechnology. Direct write nanofabrication provides a useful mechanism to deposit/etch nanoscale elements in environments otherwise inaccessible to conventional nanofabrication techniques. Here, electron beam induced deposition (EBID) was used to deposit an array of nanoscale features in a 3D environment with minimal material proximity effects outside the beam interaction region (BIR). Specifically, the membrane component of a nanoparticle separator was fabricated by depositing a linear array of sharply tipped nanopillars, with a singular pitch, designed for sub 50nm nanoparticle permeability. The nanopillar membrane was used in a dual capacity to control the flow of nanoparticles in the transaxial direction of the array while facilitating the sealing of the cellular sized compartment in the paraxial direction. An optimized growth recipe resulted which (1) maximized the growth efficiency of the membrane (which minimizes proximity effects), (2) preserved the fidelity of spacing between nanopillars (which maximizes the size based gating quality of the membrane) while (3) maintaining sharp nanopillar apexes for impaling an optically transparent polymeric lid critical for device sealing.

  3. Magnetron deposition of TCO films using ion beam

    NASA Astrophysics Data System (ADS)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  4. A critical literature review of focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    van Dorp, W. F.; Hagen, C. W.

    2008-10-01

    An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied (current density, acceleration voltage, scan patterns, etc.). Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and (as far as possible) interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters (such as the local precursor pressure) are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally

  5. Note: High density pulsed molecular beam for cold ion chemistry

    SciTech Connect

    Kokish, M. G.; Rajagopal, V.; Marler, J. P.; Odom, B. C.

    2014-08-15

    A recent expansion of cold and ultracold molecule applications has led to renewed focus on molecular species preparation under ultrahigh vacuum conditions. Meanwhile, molecular beams have been used to study gas phase chemical reactions for decades. In this paper, we describe an apparatus that uses pulsed molecular beam technology to achieve high local gas densities, leading to faster reaction rates with cold trapped ions. We characterize the beam's spatial profile using the trapped ions themselves. This apparatus could be used for preparation of molecular species by reactions requiring excitation of trapped ion precursors to states with short lifetimes or for obtaining a high reaction rate with minimal increase of background chamber pressure.

  6. A source of translationally cold molecular beams

    NASA Astrophysics Data System (ADS)

    Sarkozy, Laszlo C.

    Currently the fields studying or using molecules with low kinetic energies are experiencing an unprecedented growth. Astronomers and chemists are interested in chemical reactions taking place at temperatures below or around 20 K, spectroscopists could make very precise measurements on slow molecules and molecular physicists could chart the potential energy surfaces more accurately. And the list continues. All of these experiments need slow molecules, with kinetic energies from around 10 cm-1 down to 0. Several designs of cold sources have already been made. The most interesting ones are presented. This work describes the design and the testing of a cold source based on the collisional cooling technique: the molecules of interest are cooled well below their freezing point by a precooled buffer gas. This way condensation is avoided. The source is a copper cell cooled to 4.2 K by an external liquid helium bath. The cell is filled with cold buffer gas (helium). The molecules of choice (ammonia) are injected through a narrow tube in the middle of the cell. The cold molecules leave the cell through a 1 millimeter hole. Two versions of pulsing techniques have been employed: a shutter blade which covers the source hole and opens it only for short moments, and a chopper that modulates the beam further downstream. Both produced pulse lengths around 1 millisecond. The source is tested in an experiment in which the emerging molecules are focused and detected. Time of flight technique is used to measure the kinetic energies. Two detectors have been employed: a microwave cavity to analyze the state of the molecules in the beam, and a mass spectrometer to measure the number density of the particles. The molecules coming out of the source hole are formed into a beam by an electrostatic quadrupole state selector. The quantum mechanical aspects and the elements of electrodynamics involved in the focusing are described. A computer simulation program is presented, which helped

  7. Substrate heating measurements in pulsed ion beam film deposition

    SciTech Connect

    Olson, J.C.; Davis, H.A.; Rej, D.J.; Waganaar, W.J.; Tallant, D.R.; Thompson, M.O.

    1995-05-01

    Diamond-like Carbon (DLC) films have been deposited at Los Alamos National Laboratory by pulsed ion beam ablation of graphite targets. The targets were illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm{sup 2}. Ion energies were on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse. Raman spectra of the deposited films indicate an increasing ratio of sp{sup 3} to sp{sup 2} bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at varying positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal. Latest data and analysis will be presented.

  8. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Y.T.

    1993-12-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  9. Molecular beam studies of reaction dynamics

    SciTech Connect

    Lee, Yuan T.

    1991-03-01

    The major thrust of this research project is to elucidate detailed dynamics of simple elementary reactions that are theoretically important and to unravel the mechanism of complex chemical reactions or photochemical processes that play important roles in many macroscopic processes. Molecular beams of reactants are used to study individual reactive encounters between molecules or to monitor photodissociation events in a collision-free environment. Most of the information is derived from measurement of the product fragment energy, angular, and state distributions. Recent activities are centered on the mechanisms of elementary chemical reactions involving oxygen atoms with unsaturated hydrocarbons, the dynamics of endothermic substitution reactions, the dependence of the chemical reactivity of electronically excited atoms on the alignment of excited orbitals, the primary photochemical processes of polyatomic molecules, intramolecular energy transfer of chemically activated and locally excited molecules, the energetics of free radicals that are important to combustion processes, the infrared-absorption spectra of carbonium ions and hydrated hydronium ions, and bond-selective photodissociation through electric excitation.

  10. Molecular beam surface analysis. 1993 Summary report

    SciTech Connect

    Appelhans, A.D.; Ingram, J.C.; Groenewold, G.S.; Dahl, D.A.; Delmore, J.E.

    1993-09-01

    The Molecular Beam Surface Analysis (MBSA) program is developing both laboratory-based and potentially field-portable chemical analyses systems taking advantage of new surface analysis technology developed at the Idaho National Engineering Laboratory (INEL). The objective is to develop the means to rapidly detect and identify, with high specificity and high sensitivity, nonvolatile and low volatile organics found in Chemical Weapons (CW) and High Explosives (HE) feedstocks, agents, and decomposition products on surfaces of plants, rocks, paint chips, filters, smears of buildings, vehicles, equipment, etc.. Ideally, the method would involve no sample preparation and no waste generation, and would have the potential for being implemented as a field-portable instrument. In contrast to existing analytical methods that rely on sample volatility, MBSA is optimized for nonvolatile and low volatile compounds. This makes it amenable for rapidly screening field samples for CW agent decomposition products and feedstock chemicals and perhaps actual agents. In its final configuration (benchtop size) it could be operated in a non-laboratory environment (such as an office building) requiring no sample preparation chemistry or chemical supplies. It could also be included in a mobile laboratory used in on-site, ore remote site cooperative surveys, or in a standard laboratory, where it would provide fast screening of samples at minimal cost.

  11. ALLIGATOR - An apparatus for ion beam assisted deposition with a broad-beam ion source

    NASA Astrophysics Data System (ADS)

    Wituschek, H.; Barth, M.; Ensinger, W.; Frech, G.; Rück, D. M.; Leible, K. D.; Wolf, G. K.

    1992-04-01

    Ion beam assisted deposition is a versatile technique for preparing thin films and coatings for various applications. Up to now a prototype setup for research purposes has been used in our laboratory. Processing of industrial standard workpieces requires a high current ion source with broad beam and high uniformity for homogeneous bombardment. In this contribution a new apparatus for large area samples will be described. It is named ALLIGATOR (German acronym of facility for ion assisted evaporation on transverse movable or rotary targets). In order to have a wide energy range available two ion sources are used. One delivers a beam energy up to 1.3 keV. The other is suitable for energies from 5 keV up to 40 keV. The ``high-energy'' ion source is a multicusp multiaperture source with 180-mA total current and a beam diameter of 280 mm at the target position.

  12. Orientational anisotropy in simulated vapor-deposited molecular glasses

    SciTech Connect

    Lyubimov, Ivan; Antony, Lucas; Walters, Diane M.; Ediger, M. D.; Rodney, David; Pablo, Juan J. de

    2015-09-07

    Enhanced kinetic stability of vapor-deposited glasses has been established for a variety of glass organic formers. Several recent reports indicate that vapor-deposited glasses can be orientationally anisotropic. In this work, we present results of extensive molecular simulations that mimic a number of features of the experimental vapor deposition process. The simulations are performed on a generic coarse-grained model and an all-atom representation of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), a small organic molecule whose vapor-deposited glasses exhibit considerable orientational anisotropy. The coarse-grained model adopted here is found to reproduce several key aspects reported in experiments. In particular, the molecular orientation of vapor-deposited glasses is observed to depend on substrate temperature during deposition. For a fixed deposition rate, the molecular orientation in the glasses changes from isotropic, at the glass transition temperature, T{sub g}, to slightly normal to the substrate at temperatures just below T{sub g}. Well below T{sub g}, molecular orientation becomes predominantly parallel to the substrate. The all-atom model is used to confirm some of the equilibrium structural features of TPD interfaces that arise above the glass transition temperature. We discuss a mechanism based on distinct orientations observed at equilibrium near the surface of the film, which get trapped within the film during the non-equilibrium process of vapor deposition.

  13. Development of Crystal Al MKIDs by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Naruse, M.; Sekimoto, Y.; Noguchi, T.; Miyachi, A.; Nitta, T.; Uzawa, Y.

    2011-11-01

    We report here the effect of film qualities in superconductors on the properties of Microwave Kinetic Inductance Detectors (MKIDs). The sensitivity of MKIDs between crystal aluminum films and amorphous aluminum films is compared. The good quality and crystallized aluminum films have been prepared by using molecular beam epitaxy. We have confirmed that epitaxial Al(111) films were grown on Si(111) substrates with X-ray diffraction and in-situ reflection high-energy electron diffraction measurements. The amorphous aluminum films on the Si(111) wafers have been deposited by electron beam evaporation. We have measured transmission losses of MKIDs, noise spectrum and relaxation time against optical pulses, changing MKIDs' bath temperature from 0.11 K to 0.55 K in a dilution refrigerator. Despite of the improvement in normal resistivity, the quasiparticle decay time of both films are equivalent and 450 μs at 0.11 K. The electrical noise equivalent power of the both MKIDs are also comparable and around 10^{-17} W/sqrt{Hz}. Fabrication details and performance data of both films are presented.

  14. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  15. BEAM INDUCED ENERGY DEPOSITION IN MUON STORAGE RINGS.

    SciTech Connect

    MOKHOV,N.V.; JOHNSTONE,C.J.; PARKER,B.L.

    2001-06-18

    Beam-induced radiation effects have been simulated for 20 and 50 GeV muon storage rings designed for a Neutrino Factory. It is shown that by appropriately shielding the superconducting magnets, quench stability, acceptable dynamic heat loads, and low residual dose rates can be achieved. Alternatively, if a specially-designed skew focusing magnet without superconducting coils on the magnet's mid-plane is used, then the energy is deposited preferentially in the warm iron yoke or outer cryostat layers and internal shielding may not be required. In addition to the component irradiation analysis, shielding studies have been performed. Calculations of the external radiation were done for both designs but the internal energy deposition calculations for the 20 GeV Study-2 lattice are still in progress.

  16. Beam-induced energy deposition in muon storage rings

    SciTech Connect

    Nikolai V. Mokhov; Carol J. Johnstone; Brett Parker

    2001-06-22

    Beam-induced radiation effects have been simulated for 20 and 50 GeV muon storage rings designed for a Neutrino Factory. It is shown that by appropriately shielding the superconducting magnets, quench stability, acceptable dynamic heat loads, and low residual dose rates can be achieved. Alternatively, if a specially-designed skew focusing magnet without superconducting coils on the magnet's mid-plane is used, then the energy is deposited preferentially in the warm iron yoke or outer cryostat layers and internal shielding may not be required. In addition to the component irradiation analysis, shielding studies have been performed. Calculations of the external radiation were done for both designs but the internal energy deposition calculations for the 20 GeV Study-2 lattice are still in progress.

  17. Epitaxial growth and heterostructure synthesis by ion beam deposition (IBD)

    SciTech Connect

    Herbots, N.; Appleton, B.R.; Noggle, T.S.; Pennycook, S.J.; Zuhr, R.A.; Zehner, D.M.

    1986-01-01

    The synthesis of heterostructures and the possibility of low-temperature epitaxy by direct ion beam deposition at low energies (10 to 200 eV) were investigated both theoretically and experimentally. Monte-Carlo simulations of ion-solid interactions were used to study collision processes during IBD and have led to a qualitative understanding of the physical parameters involved in the deposition process. /sup 30/Si and /sup 74/Ge were deposited on Si(100) and Ge(100) directly from mass- and energy-analyzed ion beams. Ge/Si multilayers with interfaces as sharp as 0.35 nm were formed by IBD at 65 eV. Reactive ion etching with 20 eV /sup 37/Cl was used to clean Si surfaces in-situ at 625 and 870/sup 0/K. IBD epitaxy was then observed between 625 and 870/sup 0/K with ion energies ranging from 10 to 65 eV. /sup 30/Si films on Si(100) grown at 700/sup 0/K exhibited an ion channeling minimum yield of 4.8%. The dopant species in the substrate affected the occurrence of silicon epitaxy below 870/sup 0/K. Cross-section transmission electron microscopy (TEM) showed that dislocation loops were formed within the substrate during heated deposition, at a depth larger than 40 nm below the bombarded region. A uniaxial lattice expansion normal to the surface was measured in IBD crystals by x-ray Bragg reflection profiling and ion channeling. It is concluded that epitaxial layers and heterostructures can be formed at low temperature by IBD.

  18. Properties of boron nitride coating films prepared by the ion beam and vapor deposition method (IVD)

    NASA Astrophysics Data System (ADS)

    Andoh, Y.; Ogata, K.; Suzuki, Y.; Kamijo, E.; Satou, M.; Fujimoto, F.

    The authors have studied coating films of boron nitride prepared by the ion implantation and vapor deposition method (IVD method) and it was found that the films consisted of the cubic, wurzite and hexagonal boron nitride. These films were manufactured by bombardment of nitrogen molecular ion with energy 25-40 keV. In the present work, we prepared films by the nitrogen molecular ions with much lower energy than the previous case. Boron was evaporated by electron beam bombardment on substrates of silicon crystal wafers and nitrogen molecular ions with energy 2-25 keV were simultaneously irradiated. Infrared absorption spectra showed a clear and strong peak due to the boron nitride of cubic structures together with a broad peak of hexagonal one. The hardness of the films was tested. The result showed that the films had 3000-5000 Hv which is much harder than titanium carbide.

  19. Low-temperature beam-induced deposition of thin tin films

    NASA Astrophysics Data System (ADS)

    Funsten, H. O.; Boring, J. W.; Johnson, R. E.; Brown, W. L.

    1992-02-01

    Ion and electron beam-induced deposition (BID) of thin (1-4 μm), conductive films is accomplished by dissociating and removing the nonmetallic components of an adsorbed, metal-based, molecular gas [SnCl4 and (CH3)4Sn]. Previous research has focused primarily on room-temperature (monolayer adsorption) BID using electrons and slow, heavy ions. This study investigates low-temperature (120 K) BID in which the condensation rate of the precursor gas is well controlled. The residual metallic films are produced by using as incident beams either 2-keV electrons, 25-keV H2+, or 50-keV H2+, all of which provide predominantly electronic energy deposition, or 30-keV Ar+, which provides predominantly nuclear energy deposition. Residual films are analyzed ex situ by scanning electron microscopy, mechanical thickness measurements, resistivity measurements, Rutherford backscattering spectroscopy, and infrared spectrometry. A model is developed that considers bulk and surface dissociation mechanisms and sputtering to describe the BID process. The derived cross sections for the formation of a residue from condensed (CH3)4Sn are nonlinearly related to the total deposited energy approximately to the 1.4 power. The lowest electrical resistivity values of the residues (650 μΩ cm) are obtained only by significant loss of carbon, which is strongly dependent on the nuclear stopping power.

  20. Molecular Beam Mass Spectrometry (MBMS) (Revised) (Fact Sheet)

    SciTech Connect

    Not Available

    2011-07-01

    This fact sheet provides information about Molecular Beam Mass Spectrometry (MBMS) capabilities and applications at NREL's National Bioenergy Center. NREL has six MBMS systems that researchers and industry partners can use to understand thermochemical biomass conversion and biomass composition recalcitrance.

  1. Characterization of CrBN films deposited by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Aouadi, S. M.; Namavar, F.; Tobin, E.; Finnegan, N.; Haasch, R. T.; Nilchiani, R.; Turner, J. A.; Rohde, S. L.

    2002-02-01

    This article reports on the growth and analysis of CrBN nanocrystalline materials using an ion beam assisted deposition process. In addition, this article addresses the utilization of spectroscopic ellipsometry for in situ analysis of ternary nitrides. Coatings, with a total thickness of 1.5±0.2 μm, were deposited at low temperatures (<200 °C) on silicon substrates using ion beam assisted deposition. These coatings were characterized postdeposition using x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), visible-light spectroscopic ellipsometry (VIS-SE), infrared spectroscopic ellipsometry (IR-SE), and nanoindentation. The primary phases in the films were investigated using XRD. The surface morphology and nanocrystalline nature of the coatings (grain size of 5-7 nm) were deduced using AFM. The elemental composition and phase composition of the samples were determined from XPS and AES measurements and were subsequently deduced from the analysis of the VIS-SE data, and these correlated well. XPS, AES, and IR-SE revealed the crystal structure of the BN phase in the ternary compounds. The correlation of the results from these various techniques indicates that in situ SE may be a potential technique to control the growth of ternary nitride coatings in the future. The mechanical properties of the coatings were evaluated using nanohardness testing. The hardness and elastic modulus were measured to be 19-22 GPa and 250-270 GPa, respectively.

  2. Atomic and molecular layer deposition for surface modification

    SciTech Connect

    Vähä-Nissi, Mika; Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija; Johansson, Leena-Sisko; Koskinen, Jorma T.; Harlin, Ali

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  3. Fundamental Proximity Effects in Focused electron Beam Induced Deposition

    SciTech Connect

    Plank, Harald; Smith, Daryl; Haber, Thomas; Rack, Philip D; Hofer, Ferdinand

    2012-01-01

    Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique.

  4. Fundamental proximity effects in focused electron beam induced deposition.

    PubMed

    Plank, Harald; Smith, Daryl A; Haber, Thomas; Rack, Philip D; Hofer, Ferdinand

    2012-01-24

    Fundamental proximity effects for electron beam induced deposition processes on nonflat surfaces were studied experimentally and via simulation. Two specific effects were elucidated and exploited to considerably increase the volumetric growth rate of this nanoscale direct write method: (1) increasing the scanning electron pitch to the scale of the lateral electron straggle increased the volumetric growth rate by 250% by enhancing the effective forward scattered, backscattered, and secondary electron coefficients as well as by strong recollection effects of adjacent features; and (2) strategic patterning sequences are introduced to reduce precursor depletion effects which increase volumetric growth rates by more than 90%, demonstrating the strong influence of patterning parameters on the final performance of this powerful direct write technique. PMID:22181556

  5. Energy deposition studies for the LBNE beam absorber

    SciTech Connect

    Rakhno, Igor L.; Mokhov, Nikolai V.; Tropin, Igor S.

    2015-01-29

    Results of detailed Monte Carlo energy deposition studies performed for the LBNE absorber core and the surrounding shielding with the MARS15 code are described. The model of the entire facility, that includes a pion-production target, focusing horns, target chase, decay channel, hadron absorber system – all with corresponding radiation shielding – was developed using the recently implemented ROOT-based geometry option in the MARS15 code. This option provides substantial flexibility and automation when developing complex geometry models. Both normal operation and accidental conditions were studied. Various design options were considered, in particular the following: (i) filling the decay pipe with air or helium; (ii) the absorber mask material and shape; (iii) the beam spoiler material and size. Results of detailed thermal calculations with the ANSYS code helped to select the most viable absorber design options.

  6. Thickness dependence of resistivity for Cu films deposited by ion beam deposition

    NASA Astrophysics Data System (ADS)

    Lim, J.-W.; Mimura, K.; Isshiki, M.

    2003-07-01

    The thickness dependence of the resistivity for Cu films deposited by ion beam deposition (IBD) was evaluated using Fuchs-Sondheimer (F-S) model for electron surface scattering and Mayadas-Shatzkes (M-S) model for electron grain boundary scattering. For fitting the F-S and M-S models to the experimental data, the approximate equations proposed in both models were discussed and it was confirmed that the experimental resistivity of the Cu films could be described well by a simple form combined of the approximate equations for both models. By means of the simple form in this work, the most reasonable fit to the experimental data could be obtained under the conditions of the surface scattering coefficient p=0 and the reflection coefficient at grain boundary R=0.40.

  7. Dual ion beam deposition of carbon films with diamondlike properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  8. Synthesis of silicon nitride films by ion beam enhanced deposition

    NASA Astrophysics Data System (ADS)

    Xianghuai, Liu; Bin, Xue; Zhihong, Zheng; Zuyao, Zhou; Shichang, Zou

    1989-03-01

    Silicon nitride films with stoichiometric ratio of Si 3N 4 have been synthesized by concurrent electron beam evaporation of silicon and bombardment with nitrogen ions. The results show that the component ratio of nitrogen to silicon in IBED silicon nitride films can be controlled and predicted by the atomic arrival rate ratio of nitrogen to silicon. IR measurement shows that the characteristic absorption peak of IBED Si 3N 4 is located at a wavenumber of 840 cm -1. The refractive index ranges from 2.2 to 2.6. RBS, AES, TEM, SEM, ED and spreading resistance measurement were used for investigation of the depth profiles of composition and structure of silicon nitride films synthesized by IBED. An intermixed layer is formed at the interface by the knock on effect, and a silicon enriched layer is observed at the surface region of the film. Normally the films were found to be amorphous, but electron diffraction patterns taken from deposited layer showed a certain crystallinity. The silicon nitride films prepared by IBED have dramatically less oxygen content than that formed by non-ion-assisted deposition.

  9. Nanostructured component fabrication by electron beam-physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Singh, Jogender; Wolfe, Douglas E.

    2005-08-01

    Fabrication of cost-effective, nano-grained net-shaped components has brought considerable interest to Department of Defense, National Aeronautics and Space Administration, and Department of Energy. The objective of this paper is to demonstrate the versatility of electron beam-physical vapor deposition (EB-PVD) technology in engineering new nanostructured materials with controlled microstructure and microchemistry in the form of coatings and net-shaped components for many applications including the space, turbine, optical, biomedical, and auto industries. Coatings are often applied on components to extent their performance and life under severe environmental conditions including thermal, corrosion, wear, and oxidation. Performance and properties of the coatings depend upon their composition, microstructure, and deposition condition. Simultaneous co-evaporation of multiple ingots of different compositions in the high energy EB-PVD chamber has brought considerable interest in the architecture of functional graded coatings, nano-laminated coatings, and design of new structural materials that could not be produced economically by conventional methods. In addition, high evaporation and condensate rates allowed fabricating precision net-shaped components with nanograined microstructure for various applications. Using EB-PVD, nano-grained rhenium (Re) coatings and net-shaped components with tailored microstructure and properties were fabricated in the form of tubes, plates, and Re-coated spherical graphite cores. This paper will also present the results of various metallic and ceramic coatings including chromium, titanium carbide (TiC), titanium diboride (TiB2), hafnium nitride (HfN), titanium-boron-carbonitride (TiBCN), and partially yttria stabilized zirconia (YSZ) TBC coatings deposited by EB-PVD for various applications.

  10. Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

    NASA Astrophysics Data System (ADS)

    Noh, J. H.; Stanford, M. G.; Lewis, B. B.; Fowlkes, J. D.; Plank, H.; Rack, P. D.

    2014-12-01

    One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

  11. Large-scale Molecular Dynamics Simulations of Glancing Angle Deposition

    NASA Astrophysics Data System (ADS)

    Hubartt, Bradley; Liu, Xuejing; Amar, Jacques

    2013-03-01

    While a variety of methods have been developed to carry out atomistic simulations of thin-film growth at small deposition angles with respect to the substrate normal, due to the complex morphology as well as the existence of multiple scattering of depositing atoms by the growing thin-film, realistically modeling the deposition process for large deposition angles can be quite challenging. Accordingly, we have developed a computationally efficient method based on the use of a single graphical processing unit (GPU) to carry out molecular dynamics (MD) simulations of the deposition and growth of thin-films via glancing angle deposition. Using this method we have carried out large-scale MD simulations, based on an embedded-atom-method potential, of Cu/Cu(100) growth up to 20 monolayers for deposition angles ranging from 50° to 85° and for both random and fixed azimuthal angles. Our results for the thin-film porosity, roughness, lateral correlation length, and density vs height will be presented and compared with experiments. Results for the dependence of the microstructure, grain-size distribution, surface texture, and defect concentration on deposition angle will also be presented. Supported by NSF DMR-0907399

  12. Molecular Mechanisms of Bone 18F-NaF Deposition

    PubMed Central

    Czernin, Johannes; Satyamurthy, Nagichettiar; Schiepers, Christiaan

    2011-01-01

    There is renewed interest in 18F-NaF bone imaging with PET or PET/CT. The current brief discussion focuses on the molecular mechanisms of 18F-NaF deposition in bone and presents model-based approaches to quantifying bone perfusion and metabolism in the context of preclinical and clinical applications of bone imaging with PET. PMID:21078790

  13. Reactive Collisions in Crossed Molecular Beams

    DOE R&D Accomplishments Database

    Herschbach, D. R.

    1962-02-01

    The distribution of velocity vectors of reaction products is discussed with emphasis on the restrictions imposed by the conservation laws. The recoil velocity that carries the products away from the center of mass shows how the energy of reaction is divided between internal excitation and translation. Similarly, the angular distributions, as viewed from the center of mass, reflect the partitioning of the total angular momentum between angular momenta of individual molecules and orbital angular momentum associated with their relative motion. Crossed-beam studies of several reactions of the type M + RI yields R + MI are described, where M = K, Rb, Cs, and R = CH{sub 3}, C{sub 3}H{sub 5}, etc. The results show that most of the energy of reaction goes into internal excitation of the products and that the angular distribution is quite anisotropic, with most of the MI recoiling backward (and R forward) with respect to the incoming K beam. (auth)

  14. Measuring Incorporation Of Arsenic In Molecular-Beam Expitaxy

    NASA Technical Reports Server (NTRS)

    Lewis, Blair F.; Fernandez, Rouel F.; Madhukar, Anupam; Grunthaner, Frank J.

    1988-01-01

    Changes in surface layers cause oscillations in RHEED measurements. Specular RHEED Beam intensity measured before, during, and after deposition of seven to eight monomolecular layers of gallium during 1.5 seconds. Arsenic pressure was 1.7x10 to the negative seventh power torr (2.3x10 to the negative fifth power Pa) throughout measurements.

  15. Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

    SciTech Connect

    Kim, Jae Kwon; Cha, Kyu Man; Kang, Jung Hyun; Kim, Yong; Yi, Jae-Yel; Chung, Tae Hun; Bark, Hong Jun

    2004-08-30

    We investigate the effect of Ar-ion-beam irradiation during the deposition of SiO{sub x} films by dual-ion-beam deposition system. Ion-beam irradiation effectively increases the oxygen content, x, in SiO{sub x} films indicative of the preferential sputtering of Si phase as compared to SiO{sub 2} phase in SiO{sub x} films. We observe the intense photoluminescence from nonirradiated sample after postdeposition annealing at 1100 deg. C indicating the formation of Si nanocrystals as shown by a cross-sectional transmission electron microscope. However, the increased oxygen content in ion-beam-irradiated sample results in small optical volume of small Si nanocrystals not sufficient for yielding appreciable photoluminescence intensity after postdeposition annealing. The property is utilized for achieving the area-selective formation of Si nanocrytals by inserting a shadow mask in assist ion beam during deposition.

  16. Preparation of high-purity Cu films by non-mass separated ion beam deposition

    NASA Astrophysics Data System (ADS)

    Lim, J.-W.; Mimura, K.; Miyake, K.; Yamashita, M.; Isshiki, M.

    2003-05-01

    Cu films were deposited on Si(1 0 0) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs + ion beam, the Cu film deposited at VS=0 V was found to contain more impurities than the Cu film deposited at VS=-50 V. On the other hand, from the SIMS results with O 2+ ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at VS=0 V. As a result, higher-purity Cu film deposited at VS=-50 V could be obtained in comparison with the film deposited at VS=0 V. The purification effect of the Cu film deposited at VS=-50 V was described in details.

  17. Molecular-beam Studies of Primary Photochemical Processes

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1982-12-01

    Application of the method of molecular-beam photofragmentation translational spectroscopy to the investigation of primary photochemical processes of polyatomic molecules is described. Examples will be given to illustrate how information concerning the energetics, dynamics, and mechanism of dissociation processes can be obtained from the precise measurements of angular and velocity distributions of products in an experiment in which a well-defined beam of molecules is crossed with a laser.

  18. A low Earth orbit molecular beam space simulation facility

    NASA Technical Reports Server (NTRS)

    Cross, J. B.

    1984-01-01

    A brief synopsis of the low Earth orbit (LEO) satellite environment is presented including neutral and ionic species. Two ground based atomic and molecular beam instruments are described which are capable of simulating the interaction of spacecraft surfaces with the LEO environment and detecting the results of these interactions. The first detects mass spectrometrically low level fluxes of reactively and nonreactively surface scattered species as a function of scattering angle and velocity while the second ultrahigh velocity (UHV) molecular beam, laser induced fluorescence apparatus is capable of measuring chemiluminescence produced by either gas phase or gas-surface interactions. A number of proposed experiments are described.

  19. Focused electron beam induced deposition as a tool to create electron vortices.

    PubMed

    Béché, A; Winkler, R; Plank, H; Hofer, F; Verbeeck, J

    2016-01-01

    Focused electron beam induced deposition (FEBID) is a microscopic technique that allows geometrically controlled material deposition with very high spatial resolution. This technique was used to create a spiral aperture capable of generating electron vortex beams in a transmission electron microscope (TEM). The vortex was then fully characterized using different TEM techniques, estimating the average orbital angular momentum to be ∼0.8ℏ per electron with almost 60% of the beam ending up in the ℓ=1 state. PMID:26432987

  20. Production of high density molecular beams with wide velocity scanning

    NASA Astrophysics Data System (ADS)

    Sheffield, L. S.; Woo, S. O.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2016-06-01

    We describe modifications of a pulsed rotating supersonic beam source that improve performance, particularly increasing the beam density and sharpening the pulse profiles. As well as providing the familiar virtues of a supersonic molecular beam (high intensity, narrowed velocity distribution, and drastic cooling of rotation and vibration), the rotating source enables scanning the translational velocity over a wide range. Thereby, beams of any atom or molecule available as a gas can be slowed or speeded. Using Xe beams in the slowing mode, we have obtained lab speeds down to about 40 ± 5 m/s with density near 1011 cm-3 and in the speeding mode lab speeds up to about 660 m/s and density near 1014 cm-3. We discuss some congenial applications. Providing low lab speeds can markedly enhance experiments using electric or magnetic fields to deflect, steer, or further slow polar or paramagnetic molecules. The capability to scan molecular speeds facilitates merging velocities with a codirectional partner beam, enabling study of collisions at very low relative kinetic energies, without requiring either beam to be slow.

  1. Electromigration in focused ion beam deposited tungsten single nanowires

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    As the focused ion beam induced deposited (FIBID) nanowires (NWs) of W, Pt are being used in nanoelectronic technology to connect individual nanodevices, repairing damaged interconnects in integrated circuit (IC), electromigration study in FIBID-NWs has become essential. Briefly, when a thin conductor, like metallic Al, Cu interconnects in an IC chip carry quite high current density ~1012 A/m2, ions or atoms start migrating. Such migration causes void and hillock formation leading to interconnect discontinuity, short circuit and ultimately IC failure. Our electromigration study in single FIBID-NWs of W reveals that failure in NWs of width and thickness ~100 nm occurs typically at 1011 A/m2. Most notably, void and hillock always form in opposite polarity compared to typical metallic NWs. Such distinctly new outcome is explained via electromigration driven by direct force (ionic charge*electric field) opposed to wind force driven migration observed in metallic NWs. As FIBID-NWs are composite in nature, different species (e.g., Ga, W and C) migrate with different degree and direction depending on their oxidation state, leading to redistribution of species across NW length and formation of a Ga rich hillock. S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt Lake, Kolkata-98, India.

  2. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, L.; Hickey, M. S.; Krasovitskiy, V.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Herschbach, D. R.

    2012-06-01

    We describe a pulsed rotating supersonic beam source, evolved from an ancestral device [M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001)]. The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, cryocooling, and a shutter gate eliminated the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1-0.6 ms (depending on rotor speed) and containing ˜1012 molecules at lab speeds as low as 35 m/s and ˜1015 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, Cl2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  3. Pulsed rotating supersonic source for merged molecular beams

    NASA Astrophysics Data System (ADS)

    Sheffield, Les; Hickey, Mark; Krasovitskiy, Vitaliy; Rathnayaka, Daya; Lyuksyutov, Igor; Herschbach, Dudley

    2012-10-01

    We continue the characterization of a pulsed rotating supersonic beam source. The original device was described by M. Gupta and D. Herschbach, J. Phys. Chem. A 105, 1626 (2001). The beam emerges from a nozzle near the tip of a hollow rotor which can be spun at high-speed to shift the molecular velocity distribution downward or upward over a wide range. Here we consider mostly the slowing mode. Introducing a pulsed gas inlet system, and a shutter gate eliminate the main handicap of the original device in which continuous gas flow imposed high background pressure. The new version provides intense pulses, of duration 0.1--0.6 ms (depending on rotor speed) and containing ˜10^12 molecules at lab speeds as low as 35 m/s and ˜10^15 molecules at 400 m/s. Beams of any molecule available as a gas can be slowed (or speeded); e.g., we have produced slow and fast beams of rare gases, O2, NO2, NH3, and SF6. For collision experiments, the ability to scan the beam speed by merely adjusting the rotor is especially advantageous when using two merged beams. By closely matching the beam speeds, very low relative collision energies can be attained without making either beam very slow.

  4. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  5. Molecular dynamics simulation of gold cluster growth during sputter deposition

    NASA Astrophysics Data System (ADS)

    Abraham, J. W.; Strunskus, T.; Faupel, F.; Bonitz, M.

    2016-05-01

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  6. Full characterization of an intense pulsed hyperthermal molecular beam

    SciTech Connect

    Watanabe, D.; Che, D.-C.; Fukuyama, T.; Hashinokuchi, M.; Teraoka, Y.; Kasai, T.

    2005-05-15

    A molecular beam technique for generating an intense pulsed hyperthermal molecular beam (pulsed HTMB) was developed. The beam source consists of a pulse valve, a cooling-water bottle that protects the pulse valve from heat transfer of the high temperature nozzle, and a nozzle with a heater. The point was a pulse-valve operation with the high temperature nozzle which was 30-mm long and was made of pyrolytic boron nitride. The pulsed HTMB of HCl was practically generated. The total beam intensity of the pulsed HTMB was measured by a quadrupole mass spectrometer. It was determined that the beam intensity of the pulsed HTMB was two orders of magnitude larger than that obtained in continuous-HTMB conditions. The pulsed HTMB of HCl was fully characterized by means of (2+1) resonance-enhanced multiphoton ionization and ion time-of-flight techniques. We found that the velocity distribution of the pulsed HTMB was well expressed as supersonic molecular beams. At the highest nozzle temperature of 1400 K, the mean translational energy value of HCl molecules was 1.38 eV. The translational energy distribution of the pulsed HTMB covered a range from 0.8 to 1.6 eV. The fraction of higher translational energy molecules greater than 1.0 eV was 80% in the 1400 K nozzle. The rotational state distributions of HCl molecules in the pulsed HTMB were expressed as the Boltzmann distribution. While the rotational temperature decreased by an adiabatic expansion of the beam, the vibrational temperature, which was determined by the ratio of the ground-state population to the excited state one, almost equaled the nozzle temperature.

  7. CNT manipulation: inserting a carbonaceous dielectric layer beneath using electron beam induced deposition.

    PubMed

    Kurrat, Narendra; Vijaykumar, T; Kulkarni, G U

    2011-02-01

    Electron beam induced carbonaceous deposition has been carried out in the presence of water vapor at 0.4 torr pressure amidst residual hydrocarbons present in the SEM chamber. When performed at a CNT location on a Si substrate with low e beam energy (10 kV), the deposition was taking place beneath the CNT. While higher beam energy (25 kV) causing the deposition on the top surface of the CNT, in agreement with the earlier reports. The insertion of dielectric carbonaceous layer beneath the CNT allowed us to measure the I-V data along the length of the nanotube using CAFM. PMID:21456133

  8. Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

    Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

  9. (abstract) Optical Scattering and Surface Microroughness of Ion Beam Deposited Au and Pt Thin Films

    NASA Technical Reports Server (NTRS)

    Al-Jumaily, Ghanim A.; Raouf, Nasrat A.; Edlou, Samad M.; Simons, John C.

    1994-01-01

    Thin films of gold and platinum have been deposited onto superpolished fused silica substrates using thermal evaporation, ion assisted deposition (IAD), and ion assisted sputtering. The influence of ion beam flux, thin film material, and deposition rate on the films microroughness have been investigated. Short range surface microroughness of the films has been examined using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). Long range surface microroughness has been characterized using an angle resolved optical scatterometer. Results indicate that ion beam deposited coatings have improved microstructure over thermally evaporated films.

  10. Inert gas jets for growth control in electron beam induced deposition

    SciTech Connect

    Henry, M. R.; Kim, S.; Rykaczewski, K.; Fedorov, A. G.

    2011-06-27

    An inert, precursor free, argon jet is used to control the growth rate of electron beam induced deposition. Adjustment of the jet kinetic energy/inlet temperature can selectively increase surface diffusion to greatly enhance the deposition rate or deplete the surface precursor due to impact-stimulated desorption to minimize the deposition or completely clean the surface. Physical mechanisms for this process are described. While the electron beam is also observed to generate plasma upon interaction with an argon jet, our results indicate that plasma does not substantially contribute to the enhanced deposition rate.

  11. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  12. Dual beam optical system for pulsed laser ablation film deposition

    DOEpatents

    Mashburn, D.N.

    1996-09-24

    A laser ablation apparatus having a laser source outputting a laser ablation beam includes an ablation chamber having a sidewall, a beam divider for dividing the laser ablation beam into two substantially equal halves, and a pair of mirrors for converging the two halves on a surface of the target from complementary angles relative to the target surface normal, thereby generating a plume of ablated material emanating from the target. 3 figs.

  13. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

    NASA Astrophysics Data System (ADS)

    Chu, L. K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.

    2011-07-01

    We investigated the passivation of In0.53Ga0.47As (001) surface by molecular beam epitaxy techniques. After growth of strained In0.53Ga0.47As on InP (001) substrate, HfO2/Al2O3 high-κ oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (Dit) of the Al2O3/In0.53Ga0.47As interface have been revealed by conductance measurement, indicating a downward Dit profile from the energy close to the valence band (medium 1012 cm-2eV-1) towards that close to the conduction band (1011 cm-2eV-1). The low Dit's are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO2 has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO2 thickness (dielectric constant of HfO2 ˜20) and the remained low Dit's due to the thin Al2O3 passivation layer. The sample with HfO2 (3.4 nm)/Al2O3 (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of ˜0.93 nm.

  14. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J.; Sun, X.; Alian, A.; Heyns, M.; Afanas'ev, V. V.

    2011-04-01

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  15. Inert Gas Enhanced Laser-Assisted Purification of Platinum Electron-Beam-Induced Deposits.

    PubMed

    Stanford, Michael G; Lewis, Brett B; Noh, Joo Hyon; Fowlkes, Jason D; Rack, Philip D

    2015-09-01

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar-H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. A sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention. PMID:26126173

  16. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    SciTech Connect

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some loss of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.

  17. Inert gas enhanced laser-assisted purification of platinum electron-beam-induced deposits

    DOE PAGESBeta

    Stanford, Michael G.; Lewis, Brett B.; Noh, Joo Hyon; Fowlkes, Jason Davidson; Rack, Philip D.

    2015-06-30

    Electron-beam-induced deposition patterns, with composition of PtC5, were purified using a pulsed laser-induced purification reaction to erode the amorphous carbon matrix and form pure platinum deposits. Enhanced mobility of residual H2O molecules via a localized injection of inert Ar–H2 (4%) is attributed to be the reactive gas species for purification of the deposits. Surface purification of deposits was realized at laser exposure times as low as 0.1 s. The ex situ purification reaction in the deposit interior was shown to be rate-limited by reactive gas diffusion into the deposit, and deposit contraction associated with the purification process caused some lossmore » of shape retention. To circumvent the intrinsic flaws of the ex situ anneal process, in situ deposition and purification techniques were explored that resemble a direct write atomic layer deposition (ALD) process. First, we explored a laser-assisted electron-beam-induced deposition (LAEBID) process augmented with reactive gas that resulted in a 75% carbon reduction compared to standard EBID. Lastly, a sequential deposition plus purification process was also developed and resulted in deposition of pure platinum deposits with high fidelity and shape retention.« less

  18. Space processing applications of ion beam technology. [surface finishing, welding, milling and film deposition

    NASA Technical Reports Server (NTRS)

    Grodzka, P. G.

    1977-01-01

    Ion thruster engines for spacecraft propulsion can serve as ion beam sources for potential space processing applications. The advantages of space vacuum environments and the possible gravity effects on thruster ion beam materials operations such as thin film growth, ion milling, and surface texturing were investigated. The direct gravity effect on sputter deposition and vapor deposition processes are discussed as well as techniques for cold and warm welding.

  19. MCNPX benchmark of out-of-beam energy deposition in LiAl

    SciTech Connect

    Corzine, K.; Ferguson, P.; Morgan, G.; Quintana, D.; Waters, L.; Cooper, R.; Liljestrand, R.; Whiteson, A.

    2000-07-01

    The MCNPX code is currently being used to calculate energy deposition in the accelerator production of tritium (APT) target/blanket system components. To ensure that these components are properly designed, the code must be validated. An energy deposition experiment was designed to aid in the code validation using thermocouple sensors in-beam and thermistor-type sensors in decoupler- and blanketlike regions. This paper focuses on the out-of-beam thermistor sensors constructed of LiAl.

  20. Laser controlled deposition of metal microstructures via nondiffracting Bessel beam illumination

    NASA Astrophysics Data System (ADS)

    Drampyan, Rafael; Leonov, Nikita; Vartanyan, Tigran

    2016-04-01

    The technique of the laser controlled deposition of sodium and rubidium deposits on the sapphire substrate is presented. The metals were deposited on the clean sapphire substrate from the vapor phase contained in the evacuated and sealed cell. We use an axicon to produce a non-diffracting Bessel beam out of the beam got from the cw diode laser with 200 mW power at the wavelength of 532 nm. After 30 minutes of the laser-controlled deposition the substrates were examined in the optical microscope. The obtained metal deposits form the sharp-cut circles with the pitch of 10 μm, coincident with the tens of dark rings of the Bessel beam. Reduction of the laser power leads to the build up of the continuous metal film over the whole substrate.

  1. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150 °C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  2. Pulsed Helium Ion Beam Induced Deposition: A Means to High Growth Rates

    SciTech Connect

    Alkemade, Paul F. A.; Miro, Hozanna; Van Veldhoven, Emile; Maas, Diederick; Smith, Daryl; Rack, P. D.

    2011-01-01

    The sub-nanometer beam of a helium ion microscope was used to study and optimize helium-ion beam induced deposition of PtC nanopillars with the (CH{sub 3}){sub 3}Pt(CPCH{sub 3}) precursor. The beam current, beam dwell time, precursor refresh time, and beam focus have been independently varied. Continuous beam exposure resulted in narrow but short pillars, while pulsed exposure resulted in thinner and higher ones. Furthermore, at short dwell times the deposition efficiency was very high, especially for a defocused beam. Efficiencies were measured up to 20 times the value for continuous exposure conditions. The interpretation of the experimental data was aided by a Monte Carlo simulation of the deposition. The results indicate that two regimes are operational in ion beam induced deposition (IBID). In the first one, the adsorbed precursor molecules originally present in the beam interaction region decompose. After the original precursor layer is consumed, further depletion is averted and growth continues by the supply of molecules via adsorption and surface diffusion. Depletion around the beam impact site can be distinguished from depletion on the flanges of the growing pillars. The Monte Carlo simulations for low precursor surface coverage reproduce measured growth rates, but predict considerably narrower pillars, especially at short dwell times. Both the experiments and the simulations show that the pillar width rapidly increases with increasing beam diameter. Optimal writing strategy, good beam focusing, and rapid beam positioning are needed for efficient and precise fabrication of extended and complex nanostructures by He-IBID.

  3. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  4. Induced base transistor fabricated by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, C.-Y.; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, S.

    1986-09-01

    A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

  5. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy

    SciTech Connect

    Wang, W. H.; Han, W.; Pi, K.; McCreary, K. M.; Miao, F.; Bao, W.; Lau, C. N.; Kawakami, R. K.

    2008-11-03

    We investigate the growth of MgO films on graphene by molecular beam epitaxy and find that surface diffusion promotes a rough morphology. To reduce the mobility of surface atoms, the graphene surface is dressed by Ti atoms prior to MgO deposition. With as little as 0.5 ML (monolayer) of Ti, the MgO overlayer becomes atomically smooth. Furthermore, no aggregation of MgO is observed at the edges of the graphene sheet. These results are important for the fabrication of nanoscale electronic and spintronic devices.

  6. Pulsed Molecular Beams For Growth Of InAs On GaAs

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.

    1989-01-01

    Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

  7. Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Aspnes, D. E.; Quinn, W. E.; Gregory, S.

    1990-06-01

    We report the first use of ellipsometry as a real-time monitor of III-V semiconductor crystal growth by molecular beam epitaxy, specifically growth of GaAs and AlGaAs from arsine, triethylgallium, and triethylaluminum sources. Our results provide new insight into the oxide desorption process and show a sensitivity of ±0.03 in compositions x>0.2 for 10 Å thickness increments of AlxGa1-xAs during initial deposition on GaAs.

  8. Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

    NASA Astrophysics Data System (ADS)

    Li, C.; Zeng, Z. Q.; Fan, D. S.; Hirono, Y.; Wu, J.; Morgan, T. A.; Hu, X.; Yu, S. Q.; Wang, Zh. M.; Salamo, G. J.

    2011-12-01

    Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with classical nucleation theory. These results may extend the flexibility of droplet epitaxy by serving as templates for group V based droplet epitaxy, which is in contrast to conventional group III based droplet epitaxy and may encourage nanostructure formation of bismuth-containing materials.

  9. Resistively Heated SiC Nozzle for Generating Molecular Beams

    NASA Technical Reports Server (NTRS)

    Cagiano, Steven; Abell, Robert; Patrick, Edward; Bendt, Miri; Gundersen, Cynthia

    2007-01-01

    An improved nozzle has been developed to replace nozzles used previously in an apparatus that generates a substantially unidirectional beam of molecules passing through a vacuum at speeds of several kilometers per second. The basic principle of operation of the apparatus is the same for both the previous and the present nozzle designs. The main working part of the nozzle is essentially a cylinder that is closed except that there is an inlet for a pressurized gas and, at one end, the cylinder is closed by a disk that contains a narrow central hole that serves as an outlet. The cylinder is heated to increase the thermal speeds of the gas molecules into the desired high-speed range. Heated, pressurized gas escapes through the outlet into a portion of the vacuum chamber that is separated, by a wall, from the rest of the vacuum chamber. In this portion of the vacuum chamber, the gas undergoes a free jet expansion. Most of the expanded gas is evacuated and thus does not become part of the molecular beam. A small fraction of the expanded beam passes through a narrow central orifice in the wall and thereby becomes a needle- thin molecular beam in the portion of the vacuum on the downstream side of the wall.

  10. Laser Probing of Molecular Beam Epitaxy on SILICON(100) Surface.

    NASA Astrophysics Data System (ADS)

    Smilgys, Russell Victor

    The work presented here investigates the desorption kinetics of Ga and In from films of Ga, In, GaAs, and InAs on Si(100). Films a few monolayers (ML) thick are deposited from molecular beams under ultrahigh vacuum conditions. Laser induced fluorescence (LIF) is used to detect Ga and In in the gas phase. Using the techniques of temperature programmed desorption and isothermal desorption the desorption kinetics of each species are measured. The variation in the kinetic order and rate constant with temperature and coverage reflect the morphology and energetics of the film growth. Individually, Ga, In, and As each interact strongly with Si(100) at low coverages to form a two dimensional film. Above 1 ML for Ga and {1over2 } ML for In three dimensional islands form. For temperatures above 550 K, As coverage saturates at 1 ML. When As is codeposited with either Ga or In, As occupies the interfacial sites bound to Si. Ga and In atoms form three dimensional islands on top of the two dimensional As film. When the As coverage is below 1 ML, Ga and As strongly interact, probably to form a GaAs structure. Under the same conditions no comparable InAs structure is evident. The much larger lattice mismatch between InAs and Si(100) is proposed to explain this difference. The desorption kinetics and dynamics of the interfacial As film are also investigated. To measure As_2 desorption rates and vibrational populations, LIF detection of As_2 is developed. A result is that As_4 dissociates on Si(100) to yield chemisorbed As atoms. During desorption As atoms recombine to yield As_2. The vibrational populations of desorbed As_2 suggest a direct desorption mechanism in which the directionality of the covalent bonding to the substrate strongly influences the dynamics. To expand the detection capabilities to species not readily detected by LIF, a time-of-flight mass spectrometer is built. In the first studies nonresonant multiphoton ionization is used. As_4 is detected using 266 nm

  11. Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

    NASA Astrophysics Data System (ADS)

    Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

    Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

  12. An effusive molecular beam technique for studies of polyatomic gas-surface reactivity and energy transfer

    NASA Astrophysics Data System (ADS)

    Cushing, G. W.; Navin, J. K.; Valadez, L.; Johánek, V.; Harrison, I.

    2011-04-01

    An effusive molecular beam technique is described to measure alkane dissociative sticking coefficients, S(Tg, Ts; ϑ), on metal surfaces for which the impinging gas temperature, Tg, and surface temperature, Ts, can be independently varied, along with the angle of incidence, ϑ, of the impinging gas. Effusive beam experiments with Tg = Ts = T allow for determination of angle-resolved dissociative sticking coefficients, S(T; ϑ), which when averaged over the cos (ϑ)/π angular distribution appropriate to the impinging flux from a thermal ambient gas yield the thermal dissociative sticking coefficient, S(T). Nonequilibrium S(Tg, Ts; ϑ) measurements for which Tg ≠ Ts provide additional opportunities to characterize the transition state and gas-surface energy transfer at reactive energies. A resistively heated effusive molecular beam doser controls the Tg of the impinging gas striking the surface. The flux of molecules striking the surface from the effusive beam is determined from knowledge of the dosing geometry, chamber pressure, and pumping speed. Separate experiments with a calibrated leak serve to fix the chamber pumping speed. Postdosing Auger electron spectroscopy is used to measure the carbon of the alkyl radical reaction product that is deposited on the surface as a result of alkane dissociative sticking. As implemented in a typical ultrahigh vacuum chamber for surface analysis, the technique has provided access to a dynamic range of roughly 6 orders of magnitude in the initial dissociative sticking coefficient for small alkanes on Pt(111).

  13. Ion Beam Induced Surface Modulations from Nano to Pico: Optimizing Deposition During Erosion and Erosion During Deposition.

    SciTech Connect

    MoberlyChan, W J; Schalek, R

    2007-11-08

    Ion beams of sufficient energy to erode a surface can lead to surface modulations that depend on the ion beam, the material surface it impinges, and extrinsic parameters such as temperature and geometric boundary conditions. Focused Ion Beam technology both enables site-specific placement of these modulations and expedites research through fast, high dose and small efficient use of material. The DualBeam (FIB/SEM) enables in situ metrology, with movies observing ripple formation, wave motion, and the influence of line defects. Nanostructures (ripples of >400nm wavelength to dots spaced <40nm) naturally grow from atomically flat surfaces during erosion, however, a steady state size may or may not be achieved as a consequence of numerous controlled parameters: temperature, angle, energy, crystallography. Geometric factors, which can be easily invoked using a FIB, enable a controlled component of deposition (and/or redeposition) to occur during erosion, and conversely allow a component of etching to be incurred during (ion-beam assisted) deposition. High angles of ion beam inclination commonly lead to 'rougher' surfaces, however, the extreme case of 90.0{sup o} etching enables deposition of organized structures 1000 times smaller than the aforementioned, video-recorded nanostructures. Orientation and position of these picostructures (naturally quantized by their atomic spacings) may be controlled by the same parameters as for nanostructures (e.g. ion inclination and imposed boundary conditions, which are flexibly regulated by FIB). Judicious control of angles during FIB-CVD growth stimulates erosion with directionality that produces surface modulations akin to those observed for sputtering. Just as a diamond surface roughens from 1-D ripples to 2-D steps with increasing angle of ion sputtering, so do ripples and steps appear on carbon-grown surfaces with increase in angle of FIB-CVD. Ion beam processing has been a stalwart of the microelectronics industry, is now a

  14. Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

    SciTech Connect

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung; Hwang, Hyeon Jun; Ha, Min-Woo

    2015-03-23

    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm{sup 2}/V·s and the lowest n-type carrier concentration of approximately 1.0 × 10{sup 18}/cm{sup 3} were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

  15. Supercritical fluid molecular spray film deposition and powder formation

    DOEpatents

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  16. Influence of ion beam assisted deposition parameters on the growth of MgO and CoFeB

    SciTech Connect

    Ferreira, Ricardo; Freitas, Paulo P.; Petrova, Rumyana; McVitie, Stephen

    2012-04-01

    The effect of the kinetic parameters of an assistance ion beam on the crystallization of ion beam deposited MgO was investigated. It is shown that the crystallization of MgO in the as-deposited state is strongly dependent on the assistance beam parameters. Furthermore, two deposition regimes corresponding to different ranges of the assistance beam energy are found. XRD and TEM studies of CoFeB/MgO/CoFeB with MgO deposited in the two regimes show that CoFeB crystallization is favored when low energy assist beams are used, despite no differences being found in the MgO.

  17. Beam-induced energy deposition issues in the Very Large Hadron Collider

    SciTech Connect

    Nikolai V. Mokhov; Alexandr I. Drozhdin; G. William Foster

    2001-06-26

    Energy deposition issues are extremely important in the Very Large Hadron Collider (VLHC) with huge energy stored in its 20 TeV (Stage-1) and 87.5 TeV (Stage-2) beams. The status of the VLHC design on these topics, and possible solutions of the problems are discussed. Protective measures are determined based on the operational and accidental beam loss limits for the prompt radiation dose at the surface, residual radiation dose, ground water activation, accelerator components radiation damage and quench stability. The beam abort and beam collimation systems are designed to protect accelerator from accidental and operational beam losses, IP region quadrupoles from irradiation by the products of beam-beam collisions, and to reduce the accelerator-induced backgrounds in the detectors.

  18. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    PubMed Central

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald

    2015-01-01

    Summary Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention. PMID:25977862

  19. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    DOE PAGESBeta

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; Lester, Kevin; Plank, Harald; Rack, Philip D.

    2015-04-08

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhancesmore » the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.« less

  20. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    SciTech Connect

    Lewis, Brett B.; Stanford, Michael G.; Fowlkes, Jason D.; Lester, Kevin; Plank, Harald; Rack, Philip D.

    2015-04-08

    In this paper, platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. Finally, in addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  1. Molecular Beam Optical Stark Spectroscopy of Magnesium Deuteride

    NASA Astrophysics Data System (ADS)

    Steimle, Timothy; Zhang, Ruohan; Wang, Hailing

    2014-06-01

    Light polar, paramagnetic molecules, such as magnesium hydride, MgH, are attractive for slowing and trapping experiments because these molecules have both non-zero permanent electric dipole, μel, and magnetic dipole, μm moments. The permanent electric dipole moment is particularly relevant to Stark deceleration which depends on the ratio of the Stark shift to molecular mass. Here we report on the Stark effect in the (0,0) A2Π - X 2Σ+ band system of a cold molecular beam sample of magnesium deuteride, MgD. The lines associated with the lowest rotational levels are detected for the first time. The field-free spectrum was analyzed to produce an improved set of fine structure parameters for the A2Π(v = 0) state. The observed electric field induced splittings and shifts were analyzed to produce permanent electric dipole moments, μel,of 2.561(10)D and 1.34(8)D for A2Π(v = 0) and X2Σ+(v=0)states, respectively. This is the first molecular beam study of MgD.

  2. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    SciTech Connect

    Lee, J. H.; Tung, I. C.; Chang, S. -H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  3. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    PubMed

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques. PMID:26827327

  4. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

    SciTech Connect

    Chu, L. K.; Merckling, C.; Dekoster, J.; Caymax, M.; Alian, A.; Heyns, M.; Kwo, J.; Hong, M.

    2011-07-25

    We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

  5. Dual Ion Assist Beam Deposition of Magnesium Oxide for Coated Conductors

    NASA Astrophysics Data System (ADS)

    Groves, J. R.; Arendt3, P. N.; Holesinger, T. G.; Hammond, R. H.; Foltyn, S. R.; DePaula, R. F.; Stan, L.; Usov, I. O.

    2006-03-01

    Ion Beam Assisted Deposition (IBAD) of Magnesium Oxide (MgO) has been proven to be a viable route for producing template films used to deposit high quality YBCO coated conductors on flexible polycrystalline metal substrates. Here we will discuss improvements in this process using a dual ion assist beam configuration. Dual ion assist beam deposition of MgO reduces the requirements for substrate surface finishing while maintaining comparable film quality (phi scan full-width at half-maximum values between 7 and 8 degrees). Furthermore, this adaptation of the IBAD process eliminates the degradation of MgO texture observed in thick IBAD MgO films deposited on silicon nitride. We have deposited films up to 50 nanometers thick without degradation of in-plane texture. Increasing the MgO thickness increases the chemical stability of the template layer and can eliminate the necessity for subsequent buffer layers or the application of the homoepitaxial MgO layer needed to stabilize the thin, conventional IBAD MgO layer. Initial results of subsequently deposited YBCO on these dual assist ion beam MgO templates are quite promising.

  6. Note: A helical velocity selector for continuous molecular beams

    SciTech Connect

    Szewc, Carola; Collier, James D.; Ulbricht, Hendrik

    2010-10-15

    We report on a modern realization of the classic helical velocity selector for gas phase particle beams. The device operates stably under high vacuum conditions at rotational frequencies limited only by commercial dc motor capabilities. Tuning the rotational frequency allows selective scanning over a broad velocity band. The width of the selected velocity distributions at full-width-half-maximum is as narrow as a few percent of the selected mean velocity and independent of the rotational speed of the selector. The selector generates low vibrational noise amplitudes comparable to mechanically damped state-of-the-art turbo-molecular pumps and is therefore compatible with vibration sensitive experiments like molecule interferometry.

  7. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Mao, Shoudong; Yang, Hengxiu; Li, Jinlong; Huang, Feng; Song, Zhenlun

    2011-04-01

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar+ ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar+ ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  8. Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy

    SciTech Connect

    Liu, Y.; Xie, M.H.; Wu, H.S.; Tong, S.Y.

    2006-05-29

    During Stranski-Krastanov (SK) growth of InN on GaN by molecular-beam epitaxy, a mass transport is noted from the two-dimensional wetting layer and/or the surface excess metal adlayers to the SK islands when the excess nitrogen flux is used for deposition. The extent of mass transport depends on the material coverage. For growth under the excess indium flux condition, no such mass transport is observed.

  9. Crystalline lattice phase-conversion on thin boron nitride films deposited on silicon wafers by an ion beam assisted deposition method

    NASA Astrophysics Data System (ADS)

    Yokota, Katsuhiro; Kimura, Hidekazu; Miyashita, Fumiyoshi

    2007-04-01

    Boron nitride (BN) was deposited on (1 0 0) silicon wafers by using an ion beam assisted deposition system comprised of an electron beam evaporator and a Kaufman ion source. The intensities of XRD-peaks on turbostratic-BN and IR-peaks on hexagonal-BN increased with increasing nitrogen ion beam energy, and decreased after reached a maximum value on a BN film deposited at 2 keV. On the other hand, a XRD-peak on (1 0 0) cubic-BN first was measured on a BN film deposited at 3 keV.

  10. Nanoengineering of Ruddlesden-Popper phases using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haeni, Jeffrey Hewlett

    Epitaxial films including superlattices of the A n+1BnO3 n+1 Ruddlesden-Popper homologous series with A=Sr and Ba and B=Ti and Ru have been grown by reactive molecular beam epitaxy (MBE) on (LaAlO3)0.3--(SrAl0.5Ta 0.5O3)0.7 (LSAT), SrTiO3, DyScO 3 and Si substrates. The strict composition control necessary for the synthesis of these phases was achieved through the use of reflection high-energy electron diffraction (RHEED) intensity oscillations. The first five members of the Srn+1 TinO3n+1 and the Sr n+1RunO3 n+1 Ruddlesden-Popper homologous series, i.e., Sr 2TiO4, Sr3Ti2O7, Sr 4Ti3O10, Sr5Ti4O13 , and Sr6Ti5O16, and Sr2RuO 4, Sr3Ru2O7, Sr4Ru 3O10, Sr5Ru4O13, and Sr 6Ru5O16, respectively, were grown with layer-by-layer deposition. Dielectric measurements indicate that the dielectric constant tensor coefficient epsilon33 of the Srn +1TinO3n +1 series increases from a minimum of 44 +/- 4 in the n = 1 (Sr2TiO4) film to a maximum of 263 +/- 2 in the n = infinity (SrTiO3) film. XPS measurements on Sr2TiO4/SrTiO3 heterostructures indicate a type II interface between the two materials, with a valence band offset of -0.40 +/- 0.1 eV, and a conduction band offset of -0.2 +/- 0.1 eV. Epitaxial SrTiO3 thin films grown on DyScO3 and LSAT substrates show dramatically different dielectric properties, as measured with interdigitated electrodes. The film on DyScO3 is under biaxial tensile strain and shows significant room temperature tunability and a sharp Curie-Weiss peak at 293 K. Under biaxial compressive strain, the SrTiO 3 exhibits negligible room temperature tunability. Epitaxial SrTiO3/BaTiO3 short period superlattices were grown with nearly atomically-abrupt interfaces that are maintained even after annealing to high temperature. In addition, cross-sectional TEM reveals that all superlattice periods grown are coherently strained to the underlying (001) SrTiO3 and (001) LSAT substrates. Epitaxial SrRuO3 layers were grown on Si (100) on which a thin epitaxial (Ba,Sr)O/SrSi2

  11. Understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates

    NASA Technical Reports Server (NTRS)

    Etters, R. D.

    1985-01-01

    Work directed toward understanding the high pressure properties of molecular solids and molecular surfaces deposited on hetrogeneous substrates is reported. The motivation, apart from expanding our basic knowledge about these systems, was to understand and predict the properties of new materials synthesized at high pressure, including pressure induced metallic and superconducting states. As a consequence, information about the states of matter of the Jovian planets and their satellites, which are natural high pressure laboratories was also provided. The work on molecular surfaces and finite two and three dimensional clusters of atoms and molecules was connected with the composition and behavior of planetary atmospheres and on the processes involved in forming surface layers, which is vital to the development of composite materials and microcircuitry.

  12. Single-crystal nanowires grown via electron-beam-induced deposition

    SciTech Connect

    Klein, Kate L; Randolph, Steven J; Fowlkes, Jason Davidson; Allard Jr, Lawrence Frederick; Meyer III, Harry M; Simpson, Michael L; Rack, Philip D

    2008-01-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of 3-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this manuscript, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High-resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured -tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  13. Electron-beam-directed vapor deposition of multifunctional structures for electrochemical storage

    NASA Astrophysics Data System (ADS)

    Queheillalt, Douglas T.; Hass, Derek D.; Wadley, Haydn N. G.

    2002-07-01

    Multifunctional structures are those, which combine load- bearing support in addition to additional functions such as mechanical actuation, distributed power supply or thermal management. Electron beam - directed vapor deposition technology has been used to investigate deposition methodologies for two multifunctional battery concepts: a linear/truss base nickel - metal hydride and a fiber based solid-state Li+ ion multifunctional battery. Porous nickel coatings for the cathodes and porous rare earth metal coatings based on La and Ni or Ti and Zr for the anodes are being investigated for the nickel - metal hydride system; where LiV2O5, LiPON, and Sn3N4 are being investigated for the Li+ ion based system. Electron beam - directed vapor deposition is being used for deposition of all cathode/anode structures to provide an economical method for the development of these novel multifunctional structures.

  14. Origin and control of magnetic exchange coupling in between focused electron beam deposited cobalt nanostructures

    SciTech Connect

    Nikulina, E.; Idigoras, O.; Porro, J. M.; Berger, A.; Vavassori, P.; Chuvilin, A.; Ikerbasque, Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao

    2013-09-16

    We demonstrate the existence and control of inter-particle magnetic exchange coupling in densely packed nanostructures fabricated by focused electron beam induced deposition. With Xe beam post-processing, we have achieved the controlled reduction and eventual elimination of the parasitic halo-like cobalt deposits formed in the proximity of intended nanostructures, which are the identified source of the magnetic exchange coupling. The elimination of the halo-mediated exchange coupling is demonstrated by magnetic measurements using Kerr microscopy on Co pillar arrays. Electron microscopy studies allowed us to identify the mechanisms underlying this process and to verify the efficiency and opportunities of the described nano-scale fabrication approach.

  15. Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  16. Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

    NASA Technical Reports Server (NTRS)

    Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

    1993-01-01

    Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

  17. Beam-deposited platinum as versatile catalyst for bottom-up silicon nanowire synthesis

    SciTech Connect

    Hibst, N.; Strehle, S.; Knittel, P.; Kranz, C.; Mizaikoff, B.

    2014-10-13

    The controlled localized bottom-up synthesis of silicon nanowires on arbitrarily shaped surfaces is still a persisting challenge for functional device assembly. In order to address this issue, electron beam and focused ion beam-assisted catalyst deposition have been investigated with respect to platinum expected to form a PtSi alloy catalyst for a subsequent bottom-up nanowire synthesis. The effective implementation of pure platinum nanoparticles or thin films for silicon nanowire growth has been demonstrated recently. Beam-deposited platinum contains significant quantities of amorphous carbon due to the organic precursor and gallium ions for a focused ion beam-based deposition process. Nevertheless, silicon nanowires could be grown on various substrates regardless of the platinum purity. Additionally, p-type doping could be realized with diborane whereas n-type doping suppressed a nanowire growth. The rational utilization of this beam-assisted approach enables us to control the localized synthesis of single silicon nanowires at planar surfaces but succeeded also in single nanowire growth at the three-dimensional apex of an atomic force microscopy tip. Therefore, this catalyst deposition method appears to be a unique extension of current technologies to assemble complex nanowire-based devices.

  18. Hard X-ray multilayer coated astronomical mirrors by e-beam deposition

    NASA Astrophysics Data System (ADS)

    Spiga, Daniele; Pareschi, Giovanni; Grisoni, Gabriele; Valsecchi, Giuseppe

    2004-10-01

    A number of X-ray astronomical missions of near future (Constellation-X, XEUS, Simbol-X) will make use of hard X-rays (10-100 keV) optics with broad-band multilayer coatings. A possible technique under development is based on an extension of the already tested replication of a coated mandrel by e-beam deposition and nickel electroforming already successfully used for the soft (0.1 - 10 keV) X-ray mirrors of the Beppo-SAX, XMM, JET-X/Swift missions. In this case graded multilayers are deposited and replicated from the mandrel replicated instead of a single layer. The roughness reduction in order to improve the coating reflectivity could be achieved by an ion assistance during the e-beam deposition. The e-beam deposition with ion assistance is a technique that allows to reach comparable (if not better) smoothness levels with respect to other methods (e.g. ion sputtering), taking the advantage of a stress mitigation between the layers and of a further improvement in reflectivity due to the low density of the e-beam evaporated Carbon, which is used as bilayer spacer. In this paper we discuss the adopted deposition technique and its implementation: we present topographic (AFM) tests and X-ray reflectivity tests performed on preliminary samples.

  19. Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 µm on Si(111)

    NASA Astrophysics Data System (ADS)

    Baba, Masakazu; Nakamura, Kotaro; Du, Weijie; Ajmal Khan, M.; Koike, Shintaro; Toko, Kaoru; Usami, Noritaka; Saito, Noriyuki; Yoshizawa, Noriko; Suemasu, Takashi

    2012-09-01

    100-nm-thick BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). The Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly dependent on the RDE growth conditions and was varied from approximately 0.2 to more than 4 µm.

  20. Surface modification of biomedical implants using ion-beam-assisted sputter deposition

    NASA Astrophysics Data System (ADS)

    Ektessabi, A. M.

    1997-05-01

    Hydroxy-apatite (Ca 10(PO 4) 6(OH) 2), owing to its good bioaffinity and enhancement of osseo-integration, is a potential material for coating on dental and orthopedic implants. At present, hydroxy-apatite is coated on metal implants by a plasma-spraying method or is used in its bulk form in reconstruction surgery. In this paper, experimental results are given for preparation of hydroxy-apatite thin films on various biomedical implant materials using ion-beam sputter deposition and ion-beam-assisted sputter deposition methods. By using the ion-beam-assisted sputter deposition method, the adhesion of hydroxy-apatite thin films to substrate has improved significantly and increased to a level comparable to Ti and Al oxide thin films. Relative atomic densities of Ca, P, O and H in hydroxy-apatite thin films were obtained using ion-beam analysis methods such as RBS, RE-RBS, ERDA, and PIXE. The relative concentrations of Ca, and P were affected by assisting-beam density, and stoichiometric films were obtained for certain assisting-beam current densities.

  1. Energy deposition of heavy ions in the regime of strong beam-plasma correlations.

    PubMed

    Gericke, D O; Schlanges, M

    2003-03-01

    The energy loss of highly charged ions in dense plasmas is investigated. The applied model includes strong beam-plasma correlation via a quantum T-matrix treatment of the cross sections. Dynamic screening effects are modeled by using a Debye-like potential with a velocity dependent screening length that guarantees the known low and high beam velocity limits. It is shown that this phenomenological model is in good agreement with simulation data up to very high beam-plasma coupling. An analysis of the stopping process shows considerably longer ranges and a less localized energy deposition if strong coupling is treated properly. PMID:12689203

  2. A molecular beam/quadrupole mass spectrometer system with synchronized beam modulation and digital waveform analysis

    NASA Technical Reports Server (NTRS)

    Pellett, G. L.; Adams, B. R.

    1983-01-01

    A performance evaluation is conducted for a molecular beam/mass spectrometer (MB/MS) system, as applied to a 1-30 torr microwave-discharge flow reactor (MWFR) used in the formation of the methylperoxy radical and a study of its subsequent destruction in the presence or absence of NO(x). The modulated MB/MS system is four-staged and differentially pumped. The results obtained by the MWFR study is illustrative of overall system performance, including digital waveform analysis; significant improvements over previous designs are noted in attainable S/N ratio, detection limit, and accuracy.

  3. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    SciTech Connect

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-11-13

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 {epsilon}o and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane.

  4. Vacuum Ultraviolet Radiation Desorption of Molecular Contaminants Deposited on Quartz Crystal Microbalances

    NASA Technical Reports Server (NTRS)

    Albyn, Keith; Burns, Dewitt

    2006-01-01

    Recent quartz crystal microbalance measurements made in the Marshall Space Flight Center, Photo-Deposition Facility, for several materials, recorded a significant loss of deposited contaminants when the deposition surface of the microbalance was illuminated by a deuterium lamp. These measurements differ from observations made by other investigators in which the rate of deposition increased significantly when the deposition surface was illuminated with vacuum ultraviolet radiation. These observations suggest that the accelerated deposition of molecular contaminants on optically sensitive surfaces is dependant upon the contaminant being deposited and must be addressed during the materials selection process by common material screening techniques.

  5. Texture-Induced Anisotropy in an Inconel 718 Alloy Deposited Using Electron Beam Freeform Fabrication

    NASA Technical Reports Server (NTRS)

    Tayon, W.; Shenoy, R.; Bird, R.; Hafley, R.; Redding, M.

    2014-01-01

    A test block of Inconel (IN) 718 was fabricated using electron beam freeform fabrication (EBF(sup 3)) to examine how the EBF(sup 3) deposition process affects the microstructure, crystallographic texture, and mechanical properties of IN 718. Tests revealed significant anisotropy in the elastic modulus for the as-deposited IN 718. Subsequent tests were conducted on specimens subjected to a heat treatment designed to decrease the level of anisotropy. Electron backscatter diffraction (EBSD) was used to characterize crystallographic texture in the as-deposited and heat treated conditions. The anisotropy in the as-deposited condition was strongly affected by texture as evidenced by its dependence on orientation relative to the deposition direction. Heat treatment resulted in a significant improvement in modulus of the EBF(sup 3) product to a level nearly equivalent to that for wrought IN 718 with reduced anisotropy; reduction in texture through recrystallization; and production of a more homogeneous microstructure.

  6. Interfacial electrical properties of ion-beam sputter deposited amorphous carbon on silicon

    NASA Technical Reports Server (NTRS)

    Khan, A. A.; Woollam, J. A.; Chung, Y.; Banks, B.

    1983-01-01

    Amorphous, 'diamond-like' carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined.

  7. A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations.

    PubMed

    Timilsina, Rajendra; Smith, Daryl A; Rack, Philip D

    2013-03-22

    The ion beam induced nanoscale synthesis of PtCx (where x ∼ 5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions. The helium beam leads to more lateral growth relative to the neon beam because of its larger interaction volume. The lateral growth of the nanopillars is dominated by molecules deposited via secondary electrons in both the simulations. Notably, the helium pillars are dominated by SE-I electrons whereas the neon pillars are dominated by SE-II electrons. Using a low precursor residence time of 70 μs, resulting in an equilibrium coverage of ∼4%, the neon simulation has a lower deposition efficiency (3.5%) compared to that of the helium simulation (6.5%). At larger residence time (10 ms) and consequently larger equilibrium coverage (85%) the deposition efficiencies of helium and neon increased to 49% and 21%, respectively; which is dominated by increased lateral growth rates leading to broader pillars. The nanoscale growth is further studied by varying the ion beam diameter at 10 ms precursor residence time. The study shows that total SE yield decreases with increasing beam diameters for both the ion types. However, helium has the larger SE yield as compared to that of neon in both the low and high precursor residence time, and thus pillars are wider in all the simulations studied. PMID:23449368

  8. Tribological properties of boron nitride synthesized by ion beam deposition

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.; Spalvins, T.

    1985-01-01

    The adhesion and friction behavior of boron nitride films on 440 C bearing stainless steel substrates was examined. The thin films containing the boron nitride were synthesized using an ion beam extracted from a borazine plasma. Sliding friction experiments were conducted with BN in sliding contact with itself and various transition metals. It is indicated that the surfaces of atomically cleaned BN coating film contain a small amount of oxides and carbides, in addition to boron nitride. The coefficients of friction for the BN in contact with metals are related to the relative chemical activity of the metals. The more active the metal, the higher is the coefficient of friction. The adsorption of oxygen on clean metal and BN increases the shear strength of the metal - BN contact and increases the friction. The friction for BN-BN contact is a function of the shear strength of the elastic contacts. Clean BN surfaces exhibit relatively strong interfacial adhesion and high friction. The presence of adsorbates such as adventitious carbon contaminants on the BN surfaces reduces the shear strength of the contact area. In contrast, chemically adsorbed oxygen enhances the shear strength of the BN-BN contact and increases the friction.

  9. Crossed-molecular-beams reactive scattering of oxygen atoms

    SciTech Connect

    Baseman, R.J.

    1982-11-01

    The reactions of O(/sup 3/P) with six prototypical unsaturated hydrocarbons, and the reaction of O(/sup 1/D) with HD, have been studied in high-resolution crossed-molecular-beams scattering experiments with mass-spectrometric detection. The observed laboratory-product angular and velocity distributions unambiguously identify parent-daughter ion pairs, distinguish different neutral sources of the same ion, and have been used to identify the primary products of the reactions. The derived center-of-mass product angular and translational energy distributions have been used to elucidate the detailed reaction dynamics. These results demonstrate that O(/sup 3/P)-unsaturated hydrocarbon chemistry is dominated by single bond cleavages, leading to radical products exclusively.

  10. Molecular beam-thermal hydrogen desorption from palladium

    SciTech Connect

    Lobo, R. F. M.; Berardo, F. M. V.; Ribeiro, J. H. F.

    2010-04-15

    Among the most efficient techniques for hydrogen desorption monitoring, thermal desorption mass spectrometry is a very sensitive one, but in certain cases can give rise to uptake misleading results due to residual hydrogen partial pressure background variations. In this work one develops a novel thermal desorption variant based on the effusive molecular beam technique that represents a significant improvement in the accurate determination of hydrogen mass absorbed on a solid sample. The enhancement in the signal-to-noise ratio for trace hydrogen is on the order of 20%, and no previous calibration with a chemical standard is required. The kinetic information obtained from the hydrogen desorption mass spectra (at a constant heating rate of 1 deg. C/min) accounts for the consistency of the technique.

  11. Atmospheric processes on ice nanoparticles in molecular beams

    PubMed Central

    Fárník, Michal; Poterya, Viktoriya

    2014-01-01

    This review summarizes some recent experiments with ice nanoparticles (large water clusters) in molecular beams and outlines their atmospheric relevance: (1) Investigation of mixed water–nitric acid particles by means of the electron ionization and sodium doping combined with photoionization revealed the prominent role of HNO3 molecule as the condensation nuclei. (2) The uptake of atmospheric molecules by water ice nanoparticles has been studied, and the pickup cross sections for some molecules exceed significantly the geometrical sizes of the ice nanoparticles. (3) Photodissociation of hydrogen halides on water ice particles has been shown to proceed via excitation of acidically dissociated ion pair and subsequent biradical generation and H3O dissociation. The photodissociation of CF2Cl2 molecules in clusters is also mentioned. Possible atmospheric consequences of all these results are briefly discussed. PMID:24790973

  12. Production and all-optical deceleration of molecular beams

    NASA Astrophysics Data System (ADS)

    Chen, Gary; Jayich, Andrew; Long, Xueping; Ransford, Anthony; Campbell, Wesley

    2015-05-01

    Ultracold molecules open up new opportunities in many areas of study, including many-body physics, quantum chemistry, quantum information, and precision measurements. Current methods cannot easily address the spontaneous decay of molecules into dark states without an amalgam of repump lasers. We present an alternative method to produce cold molecules. A cryogenic buffer gas beam (CBGB) is used to create an intense, slow, cold source of molecules. By using a CBGB for the production, we can quench vibrational modes that cannot be addressed with optical methods. This is then followed by an all-optical scheme using a single ultra-fast laser to decelerate the molecules and a continuous wave laser to cool the species. We have started experiments with strontium monohydride (SrH), but the proposed method should be applicable to a wide range of molecular species.

  13. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    PubMed Central

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-01-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory. PMID:24965260

  14. Supersonic Molecular Beam Optical Stark Spectroscopy of MnH.

    NASA Astrophysics Data System (ADS)

    Gengler, Jamie; Ma, Tongmei; Harrison, Jeremy; Steimle, Timothy

    2006-03-01

    The large moment of inertia, large magnetic moment, and possible large permanent electric dipole moment of manganese monohydride, MnH, makes it a prime candidate for ultra-cold molecule production via Stark deceleration and magnetic trapping. Here we report the first molecular beam production of MnH and the analysis of the Stark effect in the (0,0) A^7 π -- X^ 7σ^+ band. The sample was prepared by laser ablation of solid Mn in an H2 supersonic expansion. The low rotational temperature (<50 K) and near natural linewidth resolution (˜50 MHz) facilitated analysis of the ^55Mn (I=5/2) and ^1H (I=1/2) hyperfine structure. A comparison of the derived field-free parameters with those obtained from sub- Doppler optical measurements will be made. Progress on the analysis of the Stark effect will be given. J.R. Bochinski, E.R. Hudson, H.J. Lewandowski, and J. Ye, Phys. Rev. A 70, 043410 (2004). S.Y.T. van de Meerakker, R.T. Jongma, H.L. Bethlem, and G. Meijer, Phys. Rev. A 64, 041401(R) (2001) report the first molecular beam production of MnH and the analysis of T.D. Varberg, J.A. Gray, R.W. Field, and A.J. Merer, J. Mol. Spec. 156, 296-318 (1992). I.E. Gordon, D.R.T. Appadoo, A. Shayesteh, K.A. Walker, and P.F. Bernath, J. Mol. Spec., 229, 145-149 (2005).

  15. A high pressure modulated molecular beam mass spectrometric sampling system

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.; Miller, R. A.

    1977-01-01

    The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

  16. Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

    SciTech Connect

    Gopal, Vidyut; Stach, Eric A.; Radmilovic, Velimir R.; Mowat, Ian A.

    2004-07-05

    The ability to interconnect different nanostructures is crucial to nanocircuit fabrication efforts. A simple and versatile direct-write nanolithography technique for the fabrication of interconnects is presented. Decomposition of a metalorganic precursor gas by a focused electron beam resulted in the deposition of conductive platinum nanowires. The combination of in situ secondary electron imaging with deposition allows for the simultaneous identification and interconnection of nanoscale components. However, the deposition was not entirely localized to the electron beam raster area, as shown by secondary ion mass spectrometry measurements. The electrical impact of the metallic spread was quantified by measuring the leakage current between closely spaced wires. The origins of the spread and strategies for minimizing it are discussed. These results indicate that, while this direct-write methodology is a convenient one for rapid prototyping of nanocircuits, caution must be used to avoid unwanted decoration of nanostructures by metallic species.

  17. Molecular Beam Epitaxy Growth of GaBi, InBi and InGaBi

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Piper, L. F. J.; McCombe, B.; McConville, C. F.; Durbin, S. M.

    2014-03-01

    Recent interest in bismuth alloys of III-V semiconductors for infrared and far-infrared device applications, specifically GaAsBi and InAsBi, has indicated that further study of the III-Bi family of binary compounds would be of great help in improving the quality of these material systems. While immiscibility issues have so far frustrated the growth of GaBi and AlBi, InBi is less problematic, and we have grown it by molecular beam epitaxy on (001) GaAs substrates. However, regions of varying composition exist across the substrate due to poor wetting of the surface. In an effort to improve film quality we have continued to refine the growth parameters by adjusting substrate temperature, beam flux ratio, and deposition rate. Characterization of these films has been performed by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Additionally, we have explored growth of GaBi and In1-xGaxBi at low Ga mole fractions, and modeled this using molecular dynamics simulations. This work is supported by the Research Foundation of the State University of New York Collaborations Fund.

  18. Optimization of ion-atomic beam source for deposition of GaN ultrathin films

    SciTech Connect

    Mach, Jindřich Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš; Šamořil, Tomáš

    2014-08-15

    We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm{sup 2}). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

  19. Enhanced material purity and resolution via synchronized laser assisted electron beam induced deposition of platinum.

    PubMed

    Roberts, Nicholas A; Fowlkes, Jason D; Magel, Gregory A; Rack, Philip D

    2013-01-01

    We introduce a laser assisted electron beam induced deposition (LAEBID) process which is a nanoscale direct write synthesis method that integrates an electron beam induced deposition process with a synchronized pulsed laser step to induce thermal desorption of reaction by-products. Localized, spatially overlapping electron and photon pulses enable the thermal desorption of the reaction by-product while mitigating issues associated with bulk substrate heating, which can shorten the precursor residence time and distort pattern fidelity due to thermal drift. Current results demonstrate purification of platinum deposits (reduced carbon content by ~50%) with the addition of synchronized laser pulses as well as a significant reduction in deposit resistivity. Measured resistivities from platinum LAEBID structures (4 × 10(3)μΩ cm) are nearly 4 orders of magnitude lower than standard EBID platinum structures (2.2 × 10(7)μΩ cm) from the same precursor and are lower than the lowest reported EBID platinum resistivity with post-deposition annealing (1.4 × 10(4)μΩ cm). Finally the LAEBID process demonstrates improved deposit resolution by ~25% compared to EBID structures under the conditions investigated in this work. PMID:23184056

  20. Cerenkov emission induced by external beam radiation stimulates molecular fluorescence

    SciTech Connect

    Axelsson, Johan; Davis, Scott C.; Gladstone, David J.; Pogue, Brian W.

    2011-07-15

    Purpose: Cerenkov emission is induced when a charged particle moves faster than the speed of light in a given medium. Both x-ray photons and electrons produce optical Cerenkov photons in everyday radiation therapy of tissue; yet, this phenomenon has never been fully documented. This study quantifies the emissions and also demonstrates that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Methods: In this study, Cerenkov emission induced by radiation from a clinical linear accelerator is investigated. Biological mimicking phantoms were irradiated with x-ray photons, with energies of 6 or 18 MV, or electrons at energies 6, 9, 12, 15, or 18 MeV. The Cerenkov emission and the induced molecular fluorescence were detected by a camera or a spectrometer equipped with a fiber optic cable. Results: It is shown that both x-ray photons and electrons, at MeV energies, produce optical Cerenkov photons in tissue mimicking media. Furthermore, we demonstrate that the Cerenkov emission can excite a fluorophore, protoporphyrin IX (PpIX), embedded in biological phantoms. Conclusions: The results here indicate that molecular fluorescence monitoring during external beam radiotherapy is possible.

  1. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    PubMed Central

    Baiutti, Federico; Christiani, Georg

    2014-01-01

    Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  2. Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

    SciTech Connect

    Nakhaie, S.; Wofford, J. M.; Schumann, T.; Jahn, U.; Ramsteiner, M.; Hanke, M.; Lopes, J. M. J. Riechert, H.

    2015-05-25

    Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.

  3. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  4. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    SciTech Connect

    Fontcuberta i Morral, A.; Colombo, C.; Abstreiter, G.; Arbiol, J.; Morante, J. R.

    2008-02-11

    Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO{sub 2} layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO{sub 2} pinholes induces the formation of nanocraters, found to be the key for the nucleation of the nanowires. With SiO{sub 2} thicknesses up to 30 nm, nanocraters reach the underlying substrate, resulting into a preferential growth orientation of the nanowires. Possibly related to the formation of nanocraters, we observe an incubation period of 258 s before the nanowires growth is initiated.

  5. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy.

    PubMed

    Baiutti, Federico; Christiani, Georg; Logvenov, Gennady

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2- x Sr x NiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

  6. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    SciTech Connect

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  7. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

    NASA Astrophysics Data System (ADS)

    Abernathy, C. R.; Jordan, A. S.; Pearton, S. J.; Hobson, W. S.; Bohling, D. A.; Muhr, G. T.

    1990-06-01

    AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.

  8. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  9. The electron beam deposition of titanium on polyetheretherketone (PEEK) and the resulting enhanced biological properties.

    PubMed

    Han, Cheol-Min; Lee, Eun-Jung; Kim, Hyoun-Ee; Koh, Young-Hag; Kim, Keung N; Ha, Yoon; Kuh, Sung-Uk

    2010-05-01

    The surface of polyetheretherketone (PEEK) was coated with a pure titanium (Ti) layer using an electron beam (e-beam) deposition method in order to enhance its biocompatibility and adhesion to bone tissue. The e-beam deposition method was a low-temperature coating process that formed a dense, uniform and well crystallized Ti layer without deteriorating the characteristics of the PEEK implant. The Ti coating layer strongly adhered to the substrate and remarkably enhanced its wettability. The Ti-coated samples were evaluated in terms of their in vitro cellular behaviors and in vivo osteointegration, and the results were compared to a pure PEEK substrate. The level of proliferation of the cells (MC3T3-E1) was measured using a methoxyphenyl tetrazolium salt (MTS) assay and more than doubled after the Ti coating. The differentiation level of cells was measured using the alkaline phosphatase (ALP) assay and also doubled. Furthermore, the in vivo animal tests showed that the Ti-coated PEEK implants had a much higher bone-in-contact (BIC) ratio than the pure PEEK implants. These in vitro and in vivo results suggested that the e-beam deposited Ti coating significantly improved the potential of PEEK for hard tissue applications. PMID:20153890

  10. Selective atomic layer deposition with electron-beam patterned self-assembled monolayers

    SciTech Connect

    Huang, Jie; Lee, Mingun; Kim, Jiyoung

    2012-01-15

    The authors selectively deposited nanolines of titanium oxide (TiO{sub 2}) through atomic layer deposition (ALD) using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a nucleation inhibition layer. Electron-beam (e-beam) patterning is used to prepare nanoline patterns in the OTS SAM on SiO{sub 2}/Si substrates suitable for selective ALD. The authors have investigated the effect of an e-beam dose on the pattern width of the selectively deposited TiO{sub 2} lines. A high dose (e.g., 20 nC/cm) causes broadening of the linewidth possibly due to scattering, while a low dose (e.g., 5 nC/cm) results in a low TiO{sub 2} deposition rate because of incomplete exposure of the OTS SAMs. The authors have confirmed that sub-30 nm isolated TiO{sub 2} lines can be achieved by selective ALD combined with OTS patterned by EBL at an accelerating voltage of 2 kV and line dose of 10 nC/cm. This research offers a new approach for patterned gate dielectric layer fabrication, as well as potential applications for nanosensors and solar cells.

  11. Epitaxial composition-graded perovskite films grown by a dual-beam pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Sakai, Joe; Autret-Lambert, Cécile; Sauvage, Thierry; Courtois, Blandine; Wolfman, Jérôme; Gervais, François

    2013-10-01

    We prepared SrTiO3 (STO) to Ba0.6Sr0.4TiO3 (BST06) out-of-plane composition-graded films on STO (100) substrates by means of a dual-beam dual-target pulsed laser deposition technique. In the deposition system, a sliding mirror divides one KrF excimer laser beam into two, realizing the dual-beam of controlled intensity ratio. X-ray diffraction reciprocal space mapping has revealed that the graded films deposited under oxygen pressure at or lower than 1×10-3 mbar were coherently strained with the same in-plane lattice parameter as the substrate. Their composition gradient along the growth direction was confirmed by Rutherford backscattering analysis to be uniform. We deposited BST06 top layers of various thickness on epitaxial composition-graded (ECG) buffer layers and examined their coherency and crystallinity. In comparison with the cases of STO homoepitaxial buffer layers, ECG buffer layers achieved better crystallinity of top BST06 layers, suggesting that the crystallinity of a heteroepitaxially-grown film is affected not only by the in-plane lattice matching but also by the out-of-plane lattice continuity with the substrate. ECG films that bridge compositions of substrate and top layer materials can be useful buffer layers for epitaxial growth of lattice-mismatched oxide films.

  12. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    NASA Astrophysics Data System (ADS)

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Takagi, Shu; Matsumoto, Yoichiro

    2008-12-01

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  13. Development of Ultra Small Shock Tube for High Energy Molecular Beam Source

    SciTech Connect

    Miyoshi, Nobuya; Nagata, Shuhei; Kinefuchi, Ikuya; Shimizu, Kazuya; Matsumoto, Yoichiro; Takagi, Shu

    2008-12-31

    A molecular beam source exploiting a small shock tube is described for potential generation of high energy beam in a range of 1-5 eV without any undesirable impurities. The performance of a non-diaphragm type shock tube with an inner diameter of 2 mm was evaluated by measuring the acceleration and attenuation process of shock waves. With this shock tube installed in a molecular beam source, we measured the time-of-flight distributions of shock-heated beams, which demonstrated the ability of controlling the beam energy with the initial pressure ratio of the shock tube.

  14. Effect of molecular weight on the electrophoretic deposition of carbon black nanoparticles in moderately viscous systems.

    PubMed

    Modi, Satyam; Panwar, Artee; Mead, Joey L; Barry, Carol M F

    2013-08-01

    Electrophoretic deposition from viscous media has the potential to produce in-mold assembly of nanoparticles onto three-dimensional parts in high-rate, polymer melt-based processes like injection molding. The effects of the media's molecular weight on deposition behavior were investigated using a model system of carbon black and polystyrene in tetrahydrofuran. Increases in molecular weight reduced the electrophoretic deposition of the carbon black particles due to increases in suspension viscosity and preferential adsorption of the longer polystyrene chains on the carbon black particles. At low deposition times (≤5 s), only carbon black deposited onto the electrodes, but the deposition decreased with increasing molecular weight and the resultant increases in suspension viscosity. For longer deposition times, polystyrene codeposited with the carbon black, with the amount of polystyrene increasing with molecular weight and decreasing with greater charge on the polystyrene molecules. This deposition behavior suggests that use of lower molecular polymers and control of electrical properties will permit electrophoretic deposition of nanoparticles from polymer melts for high-rate, one-step fabrication of nano-optical devices, biochemical sensors, and nanoelectronics. PMID:23848316

  15. Molecular collision studies with Stark-decelerated beams

    NASA Astrophysics Data System (ADS)

    Meijer, Gerard

    2008-03-01

    Molecular scattering behaviour has generally proven difficult to study at low collision energies. We formed a molecular beam of OH radicals with a narrow velocity distribution and a tunable velocity by passing the beam through a Stark decelerator [1]. The transition probabilities for inelastic scattering of the OH radicals with Xe atoms were measured as a function of the collision energy in the range of 50 to 400 wavenumbers. The behaviour of the cross-sections for inelastic scattering near the energetic thresholds was accurately measured, and excellent agreement was obtained with cross-sections derived from coupled- channel calculations on ab initio computed potential energy surfaces [2]. For collision studies at lower energies, the decelerated beams of molecules can be loaded into a variety of traps. In these traps, electric fields are used to keep the molecules confined in a region of space where they can be studied in complete isolation from the (hot) environment. Typically, 10^5 state- selected molecules can be trapped for times up to several seconds at a density of 10^7 mol/cm^3 and at a temperature of several tens of mK [3]. The long interaction time afforded by the trap has been exploited to measure the infrared radiative lifetime of vibrationally excited OH radicals, for instance, as well as to study the far-infrared optical pumping of these polar molecules due to blackbody radiation [4]. As an alternative to these traps, we have demonstrated an electrostatic storage ring for neutral molecules. In its simplest form, a storage ring is a trap in which the molecules - rather than having a minimum potential energy at a single location in space - have a minimum potential energy on a circle. To fully exploit the possibilities offered by a ring structure, it is imperative that the molecules remain in a bunch as they revolve around the ring. This ensures a high density of stored molecules, moreover, this makes it possible to inject multiple - either co-linear or

  16. Functional nickel-based deposits synthesized by focused beam induced processing

    NASA Astrophysics Data System (ADS)

    Córdoba, R.; Barcones, B.; Roelfsema, E.; Verheijen, M. A.; Mulders, J. J. L.; Trompenaars, P. H. F.; Koopmans, B.

    2016-02-01

    Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices.

  17. Ion beam sputter deposition of TiNi shape memory alloy thin films

    NASA Astrophysics Data System (ADS)

    Davies, Sam T.; Tsuchiya, Kazuyoshi

    1999-08-01

    The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

  18. Growth of textured MgO through e-beam evaporation and inclined substrate deposition

    NASA Astrophysics Data System (ADS)

    Xu, Y.; Lei, C. H.; Ma, B.; Evans, H.; Efstathiadis, H.; Manisha, R.; Massey, M.; Balachandran, U.; Bhattacharya, R.

    2006-08-01

    Long length textured MgO template on Hastelloy C276™ (HC) has been successfully deposited in a reel-to-reel (R2R) electron beam (e-beam) evaporation system by inclined substrate deposition (ISD). High deposition rate up to 10 nm s-1 with exposure length of 7 cm has been realized. The MgO template showed good in-plane texture of 9.5°-11.5° measured from the (002) phi scans. Experimental results reveal that MgO in-plane texture is formed by the preferred growth direction of [11n]\\parallel \\mathrm {substrate} normal and one of the MgO {200} planes rotates to the in-flux direction. A new expression, termed the 'two-thirds relationship', between the inclination angle α and the tilted angle of the (00l) plane from the substrate normal, β, has been summarized. YBa2Cu3O7-δ (YBCO) film deposited by pulsed laser deposition (PLD) on strontium ruthenate (SRO) buffered ISD MgO showed Tc of 91 K with transition width of 1 K. Critical current measurement indicated an Ic of 110 A cm-1 at 77 K in self-field for 0.68 µm YBCO film, corresponding to a Jc of 1.6 MA cm-2.

  19. Functional nickel-based deposits synthesized by focused beam induced processing.

    PubMed

    Córdoba, R; Barcones, B; Roelfsema, E; Verheijen, M A; Mulders, J J L; Trompenaars, P H F; Koopmans, B

    2016-02-12

    Functional nanostructures fabricated by focused electron/ion beam induced processing (FEBIP/FIBIP) open a promising route for applications in nanoelectronics. Such developments rely on the exploration of new advanced materials. We report here the successful fabrication of nickel-based deposits by FEBIP/FIBIP using bis(methyl cyclopentadienyl)nickel as a precursor. In particular, binary compounds such as nickel oxide (NiO) are synthesized by using an in situ two-step process at room temperature. By this method, as-grown Ni deposits transform into homogeneous NiO deposits using focused electron beam irradiation under O2 flux. This procedure is effective in producing highly pure NiO deposits with resistivity of 2000 Ωcm and a polycrystalline structure with face-centred cubic lattice and grains of 5 nm. We demonstrate that systems based on NiO deposits displaying resistance switching and an exchange-bias effect could be grown by FEBIP using optimized parameters. Our results provide a breakthrough towards using these techniques for the fabrication of functional nanodevices. PMID:26759183

  20. Physical properties of nitrogenated amorphous carbon films produced by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Rossi, Francois; Andre, Bernard; Veen, A. Van; Mijnarends, P. E.; Schut, H.; Labohm, F.; Delplancke, Marie Paule; Dunlop, Hugh; Anger, Eric

    1994-12-01

    Carbon films with up to 32 at.% N (a-C:N) have been prepared using an ion-beam-assisted magnetron, with an N2(+) beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. Electron energy loss spectroscopy shows that these a-C:N films are mostly graphitic with up to 20% C Sp3 bonding. Rutherford backscattering spectroscopy and neutron depth profiling show that the density goes through a maximum as the average deposited energy per unit depth increases. X-ray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon in triple (C(triple bond)N and double (C=N) bonds. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with deposited energy. These results are consistent with a densification induced by the collisions at low deposited energy, and damage-induced graphitization at high deposited energy values.

  1. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    SciTech Connect

    Groves, James R; Matias, Vladimir; Stan, Liliana; De Paula, Raymond F; Hammond, Robert H; Clemens, Bruce M

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  2. Thermally induced transformations of amorphous carbon nanostructures fabricated by electron beam induced deposition.

    PubMed

    Kulkarni, Dhaval D; Rykaczewski, Konrad; Singamaneni, Srikanth; Kim, Songkil; Fedorov, Andrei G; Tsukruk, Vladimir V

    2011-03-01

    We studied the thermally induced phase transformations of electron-beam-induced deposited (EBID) amorphous carbon nanostructures by correlating the changes in its morphology with internal microstructure by using combined atomic force microscopy (AFM) and high resolution confocal Raman microscopy. These carbon deposits can be used to create heterogeneous junctions in electronic devices commonly known as carbon-metal interconnects. We compared two basic shapes of EBID deposits: dots/pillars with widths from 50 to 600 nm and heights from 50 to 500 nm and lines with variable heights from 10 to 150 nm but having a constant length of 6 μm. We observed that during thermal annealing, the nanoscale amorphous deposits go through multistage transformation including dehydration and stress-relaxation around 150 °C, dehydrogenation within 150-300 °C, followed by graphitization (>350 °C) and formation of nanocrystalline, highly densified graphitic deposits around 450 °C. The later stage of transformation occurs well below commonly observed graphitization for bulk carbon (600-800 °C). It was observed that the shape of the deposits contribute significantly to the phase transformations. We suggested that this difference is controlled by different contributions from interfacial footprints area. Moreover, the rate of graphitization was different for deposits of different shapes with the lines showing a much stronger dependence of its structure on the density than the dots. PMID:21319745

  3. Room temperature operational single electron transistor fabricated by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Karre, P. Santosh Kumar; Bergstrom, Paul L.; Mallick, Govind; Karna, Shashi P.

    2007-07-01

    We present the fabrication and room temperature operation of single electron transistors using 8nm tungsten islands deposited by focused ion beam deposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF, giving a charging energy of 160.6meV.

  4. Growth of cluster assembled ZnO film by nanocluster beam deposition technique

    SciTech Connect

    Halder, Nilanjan

    2015-06-24

    ZnO is considered as one of the most promising material for optoelectronic devices. The present work emphasizes production of cluster assembled ZnO films by a UHV nanocluster beam deposition technique where the nanoclusters were produced in a laser vaporization cluster source. The microstructural and the optical properties of the ZnO nanocluster film deposited were investigated. As the wet chemical processes are not compatible with current solid state methods of device fabrication, therefore alternative UHV technique described in the paper is the need of the hour.

  5. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  6. Adherence of ion beam sputter deposited metal films on H-13 steel

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.

    1980-01-01

    An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

  7. Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang

    2007-12-01

    This communication reports on the fabrication of low operating voltage pentacene thin-film transistors with high-k gate dielectrics by ion beam assisted deposition (IBAD). These densely packed dielectric layers by IBAD show a much lower level of leakage current than those created by e-beam evaporation. These results, from the fact that those thin films deposited with low adatom mobility, have an open structure, consisting of spherical grains with pores in between, that acts as a significant path for leakage current. By contrast, our results demonstrate the potential to limit this leakage. The field effect mobility, on/off current ratio, and subthreshold slope obtained from pentacene thin-film transistors (TFTs) were 1.14 cm2/V s, 105, and 0.41 V/dec, respectively. Thus, the high-k gate dielectrics obtained by IBAD show promise in realizing low leakage current, low voltage, and high mobility pentacene TFTs.

  8. Size effect of large deformable nanopillar by focused-ion-beam chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tanaka, H.; Shinkai, M.; Shibutani, Y.; Kogo, Y.

    2009-11-01

    Nanoscopic fabrication technique has been achieved by the direct deposition methods using focused-ion-beam chemical vapor deposition (FIB-CVD). The nanopillar fabricated by FIB-CVD consists of an outer amorphous carbon ring and a inner gallium core. We developed the original double-cantilever (DC) bending test using two pillars rigidly connected by the exposure of a focused electron beam in a scanning electron microscope. The obtained deflection curves suggest that nanopillars have the size dependence to the mechanical response. The pillar with the diameter over 180 nm exhibits a wide region of stiffness weakening after linear response and then becomes extremely hardened at a large deflection. Thus, the pillar intrinsically possesses much more flexibility for bending without any fracturing. The accuracy of a DC testing is also discussed by estimating the bending rigidities of nanopillars, comparing to those obtained by resonance frequency tests.

  9. Ion-beam inertial fusion: the requirements posed by target and deposition physics

    SciTech Connect

    Mark, J.W.K.

    1981-10-19

    The demonstration of ICF scientific feasibility requires success in target design, driver development and target fabrication. Since these are interrelated, we present here some results of ion beam target studies and relate them to parameters of interest to ion accelerators. Ion deposition physics have long been a well known subject apart from high beam currents. Recent NRL experiments at up to 250 kA/cm/sup 2/ ions confirm the classical deposition physics now at current densities which are comparable to most ion targets. On the other hand, GSI data at low current density but 1 to 10 MeV/nucleon are continually being accumulated. They have yet to find anomalous results. Relying on target concepts outlined briefly, we report on the energy gain of ion-driven fusion targets as a function of input energy, ion ranges and focal spot radius. We also comment on some consequences of target gain versus driver and reactor requirements.

  10. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    NASA Astrophysics Data System (ADS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (<10-11 A/cm2) for Ar+ ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  11. Low-temperature epitaxy of Si and Ge by direct ion beam deposition

    SciTech Connect

    Zuhr, R.A.; Appleton, B.R.; Herbots, N.; Larson, B.C.; Noggle, T.S.; Pennycook, S.J.

    1987-07-01

    Amorphous, polycrystalline, and epitaxial thin films of Si and Ge have been grown by ion beam deposition (IBD) under ultrahigh-vacuum conditions. IBD involves the direct deposition of ions onto single-crystal substrates from mass- and energy-analyzed beams with energies of 10 to 200 eV. The IBD films were characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning were studied. Differences in the formation of epitaxial thin films on p- and n-type Si substrates were observed with n/sup -/ Si showing better epitaxy at low temperatures. Epitaxial overlayers which showed good minimum yields by ion channeling (3%--4%) have been produced at temperatures as low as 375/sup 0/C for Ge on Ge(100) and Si on Si(100).

  12. A safety system for gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Biswas, Dhrubes; Morkoç, Hadis

    1991-08-01

    Gas source molecular beam epitaxy (GSMBE) is one of the newest developments in epitaxial growth technology wherein the group V sources such as arsine and phosphine are gaseous and in the form of hydrides, while the Group III sources such as indium, aluminum, gallium are all solids. However, the gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care must be taken for the safe use of these gases so that this attractive technique can be properly utilized. This paper discusses the salient safety features of one such GSMBE system (installed in the Epicenter at the University of Illinois) consisting of a gas delivery system with its robust piping assembly, gas manifold and a scrubber. The system is integrated with a Multiple Point Toxic Gas Monitor (MPTGM) acting as the central alarm command system based on the concept of fail safe total safety. This alarm system is equipped with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown. A well-designed air flow pattern has been incorporated to provide good air quality in the laboratory and in the gas storage facility. Additionally a set of good laboratory practices ensured by administrative and personal control are instituted to reduce the hazards to an acceptable risk level.

  13. Molecular Beam Epitaxy of Layered Material Superlattices and Heterostructures

    NASA Astrophysics Data System (ADS)

    Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Furdyna, Jacek K.; Jena, Debdeep; Xing, Huili Grace

    2014-03-01

    Stacking of various layered materials is being pursued widely to realize various devices and observe novel physics. Mostly, these have been limited to exfoliation and stacking either manually or in solution, where control on rotational alignment or order of stacking is lost. We have demonstrated molecular beam epitaxy (MBE) growth of Bi2Se3/MoSe2 superlatticeand Bi2Se3/MoSe2/SnSe2 heterostructure on sapphire. We have achieved a better control on the order of stacking and number of layers as compared to the solution technique. We have characterized these structures using RHEED, Raman spectroscopy, XPS, AFM, X-ray reflectometry, cross-section (cs) and in-plane (ip) TEM. The rotational alignment is dictated by thermodynamics and is understood using ip-TEM diffraction patterns. Layered growth and long range order is evident from the streaky RHEED pattern. Abrupt change in RHEED pattern, clear demarcation of boundary between layers seen using cs-TEM and observation of Raman peaks corresponding to all the layers suggest van-der-waals epitaxy. In our knowledge this is a first demonstration of as grown superlattices and heterostuctures involving transition metal dichalcogenides and is an important step towards the goal of stacking of 2D crystals like lego blocks.

  14. Ion beam deposition of amorphous carbon films with diamond like properties

    NASA Technical Reports Server (NTRS)

    Angus, John C.; Mirtich, Michael J.; Wintucky, Edwin G.

    1982-01-01

    Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

  15. Ion beam deposition and surface characterization of thin multi-component oxide films during growth.

    SciTech Connect

    Krauss, A.R.; Im, J.; Smentkowski, V.; Schultz, J.A.; Auciello, O.; Gruen, D.M.; Holocek, J.; Chang, R.P.H.

    1998-01-13

    Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena which can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase.

  16. Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

    SciTech Connect

    Kudo, Togo; Takahashi, Sunao; Nariyama, Nobuteru; Hirono, Toko; Tachibana, Takeshi; Kitamura, Hideo

    2006-12-15

    Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739 nm and a wideband structure extending from 550 to 700 nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 10{sup 3}. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

  17. Molecular Dynamics simulation of Ru flattening by Gas Cluster Ion Beam

    NASA Astrophysics Data System (ADS)

    Matsukuma, Masaaki; Matsuzaki, Kazuyoshi; Inaba, Kenji; Miura, Ryuji; Suzuki, Ai; Hatakeyama, Nozomu; Miyamoto, Akira

    2014-10-01

    Noble metals such as platinum or ruthenium have been hardly used in the semiconductor devices in spite of their physical and electrical properties, because they were hard to process. High energy monomer ion beams which can cut hard materials may induce structural damages. A gas cluster ion beam (GCIB) consists of a few thousands of atoms or molecules and is accelerated up to several tens keV. GCIB is able to realize localized high energy deposition with low energy per components in the cluster. This means that each component in clusters cannot have enough energy to react with surface. On the other hand, the clusters with tens keV of kinetic energy may make a high reactive field at the hypocenter areas. In consequence it is expected that the GCIB irradiation should achieve the metal processing with low damage. Recently flattening of Ru thin films using GCIB is reported. We conducted molecular dynamics simulation of GCIB incident to Ru surface with the in-house interatomic potential models obtained based on the quantum chemical calculations and found that the internal degree of freedom of a cluster played important roles during the GCIB bombardment.

  18. Solution deposition planarization for ion beam texturing of long-length flexible substrates

    SciTech Connect

    Sheehan, Chris J; Jung, Yehyun; Holesinger, Terry G; Matias, Vladimir

    2010-12-01

    We present the results of a study of solution deposition planarization (SDP) for preparing smooth flexible substrates in long lengths. Roll to roll fabrication of electronic and power devices with single-crystal properties are desired for inexpensive production. Using the SDP process we have achieved 0.5 nm RMS roughness from a starting roughness of over 20 nm on 5 {micro}m areas. We model the surface roughness reduction as governed by the amount of film shrinkage during solution deposition, number of coatings, solution composition and a residual roughness based on film thickness. This process is extremely well suited for ion-beam texturing of MgO. By utilizing solution deposition of a-Y{sub 2}O{sub 3} to planarize the substrate we create the required surface for in-plane MgO texturing using assisted ion-beam deposition. We have achieved in-plane texture FWHM of 4{sup o} on the SDP substrates. Using an appropriate simple layer architecture for superconducting coated conductors we attained critical currents in excess of 3 MA/cm{sup 2} at 75 K for 1-1.2 {micro}m thick YBa{sub 2}Cu{sub 3}O{sub y} films.

  19. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Woźniak, P.; Höflich, K.; Brönstrup, G.; Banzer, P.; Christiansen, S.; Leuchs, G.

    2016-01-01

    Direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In the case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium.

  20. Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

    SciTech Connect

    Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

    2011-05-15

    The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

  1. Unveiling the optical properties of a metamaterial synthesized by electron-beam-induced deposition.

    PubMed

    Woźniak, P; Höflich, K; Brönstrup, G; Banzer, P; Christiansen, S; Leuchs, G

    2016-01-15

    Direct writing using a focused electron beam allows for fabricating truly three-dimensional structures of sub-wavelength dimensions in the visible spectral regime. The resulting sophisticated geometries are perfectly suited for studying light-matter interaction at the nanoscale. Their overall optical response will strongly depend not only on geometry but also on the optical properties of the deposited material. In the case of the typically used metal-organic precursors, the deposits show a substructure of metallic nanocrystals embedded in a carbonaceous matrix. Since gold-containing precursor media are especially interesting for optical applications, we experimentally determine the effective permittivity of such an effective material. Our experiment is based on spectroscopic measurements of planar deposits. The retrieved permittivity shows a systematic dependence on the gold particle density and cannot be sufficiently described using the common Maxwell-Garnett approach for effective medium. PMID:26629782

  2. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Jiang, Weilin; Qiang, You; Burks, Edward; Liu, Kai; Namavar, Fereydoon; Mccloy, John S.

    2014-11-03

    Iron oxide films were deposited onto Si substrates using ion-beam-assisted deposition. The films were ~300 nm thick polycrystalline magnetite with an average crystallite size of ~6 nm. Additionally, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite. However, Raman spectroscopy and x-ray diffraction both indicate that the films are single-phase magnetite. Since no direct evidence of a second phase could be found, exchange bias likely arises due to defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples have such small grains, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field. The high energy deposition process results in an oxygen-rich, argon-containing magnetite film with low temperature exchange bias due to defects at the high concentration of grain boundaries.

  3. In-situ spectral reflectance for improving molecular beam epitaxy device growth

    SciTech Connect

    Breiland, W.G.; Hammons, B.E.; Hou, H.Q.; Killeen, K.P.; Klem, J.F.; Reno, J.L.; Sherwin, M.

    1997-05-01

    This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy) machines, equipment difficulties forced the authors to test most of their ideas on a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. A pre-growth control strategy using in situ reflectance has led to an unprecedented demonstration of process control on one of the most difficult device structures that can be grown with compound semiconductor materials. Hundreds of vertical cavity surface emitting lasers (VCSEL`s) were grown with only {+-} 0.3% deviations in the Fabry-Perot cavity wavelength--a nearly ten-fold improvement over current calibration methods. The success of the ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) method has led to a great deal of interest from the commercial sector, including use by Hewlett Packard and Honeywell. The algorithms, software and reflectance design are being evaluated for patents and/or license agreements. A small company, Filmetrics, Inc., is incorporating the ADVISOR analysis method in its reflectometer product.

  4. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  5. Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors.

    PubMed

    Cullen, Jared; Lobo, Charlene J; Ford, Michael J; Toth, Milos

    2015-09-30

    Electron-beam-induced deposition (EBID) is a direct-write chemical vapor deposition technique in which an electron beam is used for precursor dissociation. Here we show that Arrhenius analysis of the deposition rates of nanostructures grown by EBID can be used to deduce the diffusion energies and corresponding preexponential factors of EBID precursor molecules. We explain the limitations of this approach, define growth conditions needed to minimize errors, and explain why the errors increase systematically as EBID parameters diverge from ideal growth conditions. Under suitable deposition conditions, EBID can be used as a localized technique for analysis of adsorption barriers and prefactors. PMID:26340502

  6. Vapor deposition of a smectic liquid crystal: highly anisotropic, homogeneous glasses with tunable molecular orientation.

    PubMed

    Gómez, Jaritza; Jiang, Jing; Gujral, Ankit; Huang, Chengbin; Yu, Lian; Ediger, M D

    2016-03-01

    Physical vapor deposition (PVD) has been used to prepare glasses of itraconazole, a smectic A liquid crystal. Glasses were deposited onto subtrates at a range of temperatures (Tsubstrate) near the glass transition temperature (Tg), with Tsubstrate/Tg ranging from 0.70 to 1.02. Infrared spectroscopy and spectroscopic ellipsometry were used to characterize the molecular orientation using the orientational order parameter, Sz, and the birefringence. We find that the molecules in glasses deposited at Tsubstrate = Tg are nearly perpendicular to the substrate (Sz = +0.66) while at lower Tsubstrate molecules are nearly parallel to the substrate (Sz = -0.45). The molecular orientation depends on the temperature of the substrate during preparation, allowing layered samples with differing orientations to be readily prepared. In addition, these vapor-deposited glasses are macroscopically homogeneous and molecularly flat. We interpret the combination of properties obtained for vapor-deposited glasses of itraconazole to result from a process where molecular orientation is determined by the structure and dynamics at the free surface of the glass during deposition. Vapor deposition of liquid crystals is likely a general approach for the preparation of highly anisotropic glasses with tunable molecular orientation for use in organic electronics and optoelectronics. PMID:26875700

  7. Atomistic study of xenon crystal growth via low-temperature atom beam deposition

    NASA Astrophysics Data System (ADS)

    Totò, Nicola; Schön, Christian; Jansen, M.

    2010-09-01

    We studied theoretically the deposition of Xe atoms on a sapphire substrate and the subsequent growth of ordered Xe phases via the low-temperature atom beam deposition method. This chemical synthesis method [D. Fischer and M. Jansen, J. Am. Chem. Soc. 41, 1755 (2002)10.1002/1521-3773(20020517)41:10<1755::AID-ANIE1755>3.0.CO;2-C] is particularly suitable for synthesizing metastable solid compounds. The modeling procedure consisted of several steps, where we used empirical potentials to model the interactions within the substrate, the Xe-Xe interactions in the gas phase and the solid, and the interactions between the Xe atoms and the substrate. In a first step, we established that under the experimental conditions, no Xe clusters formed in the gas phase, and thus the deposition could be described by the adsorption of single Xe atoms on the substrate at low temperatures. Next, we simulated the Xe deposition process and we studied the growth mode depending on various synthesis parameters such as the deposition rate and the temperature of the substrate. Finally, the deposited Xe layers were tempered and the structure of the resulting compound was analyzed. We studied the establishment of locally ordered regions as a function of time, both during the deposition and the tempering. We observed that the final configuration was always crystalline, although defects such as stacking faults and dislocations were likely to form. The occurrence of different growth modes and the formation of defects were explained by studying diffusion and adsorption processes on the surface of both the substrate and the depositing phase.

  8. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGESBeta

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  9. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  10. Control of silicon oxynitrides refractive index by reactive-assisted ion beam sputter deposition

    NASA Astrophysics Data System (ADS)

    Ida, Michel; Chaton, Patrick; Rafin, B.

    1994-11-01

    This paper presents the properties of silicon oxynitrides obtained by reactive ion beam sputter deposition: Dual Ion Beam System. Control of refractive index was achieved by adjusting the process parameters as ion beam current, ion beam energy and reactive gas partial pressure of oxygen and nitrogen. The main difficulty was to achieve stoichiometric nitride, it has been shown that energetic ionized nitrogen was needed to obtain silicon nitride. The major parameter, to obtain variable compositions between silica and silicon nitride, was the oxygen partial pressure with a fixed nitrogen partial pressure. Optical constants in the visible range, refractive index and extinction coefficient, have been measured by spectrophotometry and spectroscopic ellipsometry. Stoichiometry, contamination and packing density have been measured by Rutherford Backscattering and Nuclear Reaction Analysis. The correlation between the film composition and optical constants is shown. Various test results indicate that silicon oxynitrides obtained by reactive assisted ion beam sputtering are high quality optical materials. These films are homogeneous isotropic, with a high packing density. The extinction coefficient is in the order of 10-4 after 300 degree(s)C annealing. All values of refractive index between 1.49 and 2.1 can be chosen.

  11. Molecular Ion Beam Transportation for Low Energy Ion Implantation

    SciTech Connect

    Kulevoy, T. V.; Kropachev, G. N.; Seleznev, D. N.; Yakushin, P. E.; Kuibeda, R. P.; Kozlov, A. V.; Koshelev, V. A.; Hershcovitch, A.; Johnson, B. M.; Gushenets, V. I.; Oks, E. M.; Polozov, S. M.; Poole, H. J.

    2011-01-07

    A joint research and development of steady state intense boron ion sources for 100's of electron-volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B{sub 10}H{sub 14}) and carborane (C{sub 2}B{sub 10}H{sub 12}) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.

  12. Internal Energy Dependence of Molecular Condensation Coefficients Determined from Molecular Beam Surface Scattering Experiments

    DOE R&D Accomplishments Database

    Sibener, S. J.; Lee, Y. T.

    1978-05-01

    An experiment was performed which confirms the existence of an internal mode dependence of molecular sticking probabilities for collisions of molecules with a cold surface. The scattering of a velocity selected effusive beam of CCl{sub 4} from a 90 K CC1{sub 4} ice surface has been studied at five translational velocities and for two different internal temperatures. At a surface temperature of 90 K (approx. 99% sticking probability) a four fold increase in reflected intensity was observed for the internally excited (560 K) CC1{sub 4} relative to the room temperature (298 K) CC1{sub 4} at a translational velocity of 2.5 X 10{sup 4} cm/sec. For a surface temperature of 90 K all angular distributions were found to peak 15{sup 0} superspecularly independent of incident velocity.

  13. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    NASA Astrophysics Data System (ADS)

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Ying-Bing; Abbas, Khawar; Ghasemi Baboly, Mohammadhosein; Anjum, D. H.; Chaieb, S.; Leseman, Zayd C.

    2015-02-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  14. Spatial chemistry evolution during focused electron beam-induced deposition: origins and workarounds

    NASA Astrophysics Data System (ADS)

    Winkler, Robert; Geier, Barbara; Plank, Harald

    2014-12-01

    The successful application of functional nanostructures, fabricated via focused electron-beam-induced deposition (FEBID), is known to depend crucially on its chemistry as FEBID tends to strong incorporation of carbon. Hence, it is essential to understand the underlying mechanisms which finally determine the elemental composition after fabrication. In this study we focus on these processes from a fundamental point of view by means of (1) varying electron emission on the deposit surface; and (2) changing replenishment mechanism, both driven by the growing deposit itself. First, we revisit previous results concerning chemical variations in nanopillars (with a quasi-1D footprint) depending on the process parameters. In a second step we expand the investigations to deposits with a 3D footprint which are more relevant in the context of applications. Then, we demonstrate how technical setups and directional gas fluxes influence final chemistries. Finally, we put the findings in a bigger context with respect to functionalities which demonstrates the crucial importance of carefully set up fabrication processes to achieve controllable, predictable and reproducible chemistries for FEBID deposits as a key element for industrially oriented applications.

  15. Time-of-flight velocity analysis of atomic and molecular beams

    NASA Technical Reports Server (NTRS)

    Hagena, O. F.; Varma, A. K.

    1968-01-01

    Conditions required for resolving a given beam speed distribution were evaluated by calculating the time-of-flight (TOF) signal for a finite open time of the beam shutter. Design criteria for a beam chopper and detection system are discussed in terms of the resolution, the range of speeds to be measured, and the optimum signal to noise ratio. A TOF system for detection of high intensity molecular beams with large speed ratios, as well as for low intensity scattered beams, is described. Experimental results are presented.

  16. Formation of slow molecules in chemical reactions in crossed molecular beams

    NASA Astrophysics Data System (ADS)

    Tscherbul, T. V.; Barinovs, Ğ.; Kłos, J.; Krems, R. V.

    2008-08-01

    We demonstrate that chemical reactions in collisions of molecular beams can generally produce low-velocity molecules in the laboratory-fixed frame. Our analysis shows that collisions of beams may simultaneously yield slow reactant molecules and slow products. The reaction products are formed in selected rovibrational states and scattered in a specific direction, which can be controlled by tuning the kinetic energies of the incident beams and the angle between the beams. Our calculations indicate that chemical reactions of polar alkali-metal dimers are barrierless and we suggest that chemical reactions involving alkali-metal dimers may be particularly suitable for producing slow molecules in crossed beams.

  17. Smoothing of substrate pits using ion beam deposition for EUV lithography

    NASA Astrophysics Data System (ADS)

    Harris-Jones, Jenah; Jindal, Vibhu; Kearney, Patrick; Teki, Ranganath; John, Arun; Kwon, Hyuk Joo

    2012-03-01

    Mitigation of pit-type defects proves to be a major hurdle facing the production of a defect-free mask blank for EUV lithography. Recent efforts have been directed toward substrate smoothing methods during deposition. The angle of incidence of the substrate is known to have a significant effect on the growth of defects during deposition. It has been shown that shadowing effects for bump-type defects are reduced when depositing Mo/Si films at near-normal incidence, resulting in a Gaussian growth profile in which the height and volume of the defect are minimized. Conversely, operating at off-normal incidence reduces shadowing of pit-type defects. When altering the angle of incidence of the substrate, the target angle must be changed to maintain uniformity. The resulting mask blank must also meet surface roughness specifications post-deposition while maintaining a low defect density. In this study, various substrate angle and target angle combinations were investigated within the Veeco Nexus Low Defect Density tool at SEMATECH to find optimum in situ pit smoothing conditions using ion beam deposition on both quartz and low thermal expansion material (LTEM) substrates. The possible substrate-target angle combinations are limited by the design of the current deposition tool; therefore, a phase space has been mapped out to determine uniform and non-uniform regions. Other deposition parameters including operating pressure and working gas composition were also explored. After deposition, EUV reflectrometry measurements were taken to evaluate uniformity in the wavelength; surface roughness, change in pit depth, change in full width at half maximum, and pit smoothing power were determined using atomic force microscopy (AFM); transmission electron microscopy (TEM) was used to study the effect of film disruption through the multilayer; and the printability of smoothed pits will be measure actinically using SEMATECH's AIT tool. Preliminary results show that positive values for

  18. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging

    SciTech Connect

    Meng, Congsen; Janssen, Maurice H. M.

    2015-02-15

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude.

  19. Measurement of the density profile of pure and seeded molecular beams by femtosecond ion imaging.

    PubMed

    Meng, Congsen; Janssen, Maurice H M

    2015-02-01

    Here, we report on femtosecond ion imaging experiments to measure the density profile of a pulsed supersonic molecular beam. Ion images are measured for both a molecular beam and bulk gas under identical experimental conditions via femtosecond multiphoton ionization of Xe atoms. We report the density profile of the molecular beam, and the measured absolute density is compared with theoretical calculations of the centre line beam density. Subsequently, we discuss reasons accounting for the differences between measurements and calculations and propose that strong skimmer interference is the most probable cause for the differences. Furthermore, we report on experiments measuring the centre line density of seeded supersonic beams. The femtosecond ion images show that seeding the heavy Xe atom at low relative seed fractions (1%-10%) in a light carrier gas like Ne results in strong relative enhancements of up to two orders of magnitude. PMID:25725826

  20. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

    SciTech Connect

    Coelho, S. M. M.; Auret, F. D.; Janse van Rensburg, P. J.; Nel, J. M.

    2013-11-07

    Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E{sub 0.28} and E{sub 0.31}, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable.

  1. Positron deposition in plasmas by positronium beam ionization and transport of positrons in tokamak plasmas

    SciTech Connect

    Murphy, T.J.

    1986-11-01

    In a recently proposed positron transport experiment, positrons would be deposited in a fusion plasma by forming a positronium (Ps) beam and passing it through the plasma. Positrons would be deposited as the beam is ionized by plasma ions and electrons. Radial transport of the positrons to the limiter could then be measured by detecting the gamma radiation produced by annihilation of positrons with electrons in the limiter. This would allow measurements of the transport of electron-mass particles and might shed some light on the mechanisms of electron transport in fusion plasmas. In this paper, the deposition and transport of positrons in a tokamak are simulated and the annihilation signal determined for several transport models. Calculations of the expected signals are necessary for the optimal design of a positron transport experiment. There are several mechanisms for the loss of positrons besides transport to the limiter. Annihilation with plasma electrons and reformation of positronium in positron-hydrogen collisions are two such processes. These processes can alter the signal and place restrictions ons on the plasma conditions in which positron transport experiments can be effectively performed.

  2. Substrate temperature controls molecular orientation in two-component vapor-deposited glasses.

    PubMed

    Jiang, J; Walters, D M; Zhou, D; Ediger, M D

    2016-04-01

    Vapor-deposited glasses can be anisotropic and molecular orientation is important for organic electronics applications. In organic light emitting diodes (OLEDs), for example, the orientation of dye molecules in two-component emitting layers significantly influences emission efficiency. Here we investigate how substrate temperature during vapor deposition influences the orientation of dye molecules in a model two-component system. We determine the average orientation of a linear blue light emitter 1,4-di-[4-(N,N-diphenyl)amino]styryl-benzene (DSA-Ph) in mixtures with aluminum-tris(8-hydroxyquinoline) (Alq3) by spectroscopic ellipsometry and IR dichroism. We find that molecular orientation is controlled by the ratio of the substrate temperature during deposition and the glass transition temperature of the mixture. These findings extend recent results for single component vapor-deposited glasses and suggest that, during vapor deposition, surface mobility allows partial equilibration towards orientations preferred at the free surface of the equilibrium liquid. PMID:26922903

  3. Fabrication of precision high quality facets on molecular beam epitaxy material

    DOEpatents

    Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

    2001-01-01

    Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

  4. Crossed molecular beam studies of atmospheric chemical reaction dynamics

    SciTech Connect

    Zhang, Jingsong

    1993-04-01

    The dynamics of several elementary chemical reactions that are important in atmospheric chemistry are investigated. The reactive scattering of ground state chlorine or bromine atoms with ozone molecules and ground state chlorine atoms with nitrogen dioxide molecules is studied using a crossed molecular beams apparatus with a rotatable mass spectrometer detector. The Cl + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at four collision energies ranging from 6 kcal/mole to 32 kcal/mole. The derived product center-of-mass angular and translational energy distributions show that the reaction has a direct reaction mechanism and that there is a strong repulsion on the exit channel. The ClO product is sideways and forward scattered with respect to the Cl atom, and the translational energy release is large. The Cl atom is most likely to attack the terminal oxygen atom of the ozone molecule. The Br + O{sub 3} {yields} ClO + O{sub 2} reaction has been studied at five collision energies ranging from 5 kcal/mole to 26 kcal/mole. The derived product center-of-mass angular and translational energy distributions are quite similar to those in the Cl + O{sub 3} reaction. The Br + O{sub 3} reaction has a direct reaction mechanism similar to that of the Cl + O{sub 3} reaction. The electronic structure of the ozone molecule seems to play the central role in determining the reaction mechanism in atomic radical reactions with the ozone molecule. The Cl + NO{sub 2} {yields} ClO + NO reaction has been studied at three collision energies ranging from 10.6 kcal/mole to 22.4 kcal/mole. The center-of-mass angular distribution has some forward-backward symmetry, and the product translational energy release is quite large. The reaction proceeds through a short-lived complex whose lifetime is less than one rotational period. The experimental results seem to show that the Cl atom mainly attacks the oxygen atom instead of the nitrogen atom of the NO{sub 2} molecule.

  5. Interfacial characterization of ion-beam-deposited a-C films on Ge

    NASA Astrophysics Data System (ADS)

    Bruce, T.; Bello, I.; Huang, L. J.; Lau, W. M.; High, M.; Strnad, V.; Panchhi, P.

    1994-07-01

    Diamondlike carbon films were deposited on germanium crystals with a mass-separated C+ ion beam in ultrahigh vacuum over the energy range 20-275 eV, and the interfaces were characterized with x-ray photoelectron spectroscopy. It was found that ion bombardment induced a carbide phase on the germanium surface. Further carbon accumulation then led to the growth of an amorphous carbon overlayer. The carbide phase was identified by a rather low C 1s binding energy (at about 283.8 eV) and small positive shift of the Ge 3p peak (about 0.4 eV). The valence-band spectra of these samples also suggested that germanium carbide formed with a pure carbon beam for the bombardment energy range considered has a band gap between germanium and diamondlike carbon.

  6. Review of magnetic nanostructures grown by focused electron beam induced deposition (FEBID)

    NASA Astrophysics Data System (ADS)

    De Teresa, J. M.; Fernández-Pacheco, A.; Córdoba, R.; Serrano-Ramón, L.; Sangiao, S.; Ibarra, M. R.

    2016-06-01

    We review the current status of the use of focused electron beam induced deposition (FEBID) for the growth of magnetic nanostructures. This technique relies on the local dissociation of a precursor gas by means of an electron beam. The most promising results have been obtained using the Co2(CO)8 precursor, where the Co content in the grown nanodeposited material can be tailored up to more than 95 at.%. Functional behaviour of these Co nanodeposits has been observed in applications such as arrays of magnetic dots for information storage and catalytic growth, magnetic tips for scanning probe microscopes, nano-Hall sensors for bead detection, nano-actuated magnetomechanical systems and nanowires for domain-wall manipulation. The review also covers interesting results observed in Fe-based and alloyed nanodeposits. Advantages and disadvantages of FEBID for the growth of magnetic nanostructures are discussed in the article as well as possible future directions in this field.

  7. Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Baba, M.; Toh, K.; Toko, K.; Hara, K. O.; Usami, N.; Saito, N.; Yoshizawa, N.; Suemasu, T.

    2013-09-01

    BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.

  8. Growth of ErAs nanodots by molecular beam epitaxy for application to tunneling junctions in multijunction solar cells

    NASA Astrophysics Data System (ADS)

    Hung, Chao-Yu; Sogabe, Tomah; Miyashita, Naoya; Okada, Yoshitaka

    2016-02-01

    ErAs nanodots (NDs) grown on GaAs(001) substrates by using molecular beam epitaxy (MBE) were investigated. Atomic force microscope images indicate that the size of ErAs NDs increases with deposition time and growth temperature. A calibration was performed to determine the deposition rate of ErAs in order that the size of NDs can be accurately controlled and hence optimized. Local current flow images and surface profiles around ErAs NDs were simultaneously measured to clarify the local conductivity distribution corresponding to a real space profile. Furthermore, we also fabricated and characterized an ErAs-ND-embedded GaAs tunnel junction (TJ), which resulted in a voltage drop of 30 mV for 15 A/cm2 operation current equivalent to 1000 suns concentration, which is less than one-third of that of a conventional heavily doped tunnel junction.

  9. Multi-beam pulsed laser deposition: new method of making nanocomposite coatings

    NASA Astrophysics Data System (ADS)

    Darwish, Abdalla M.; Wilson, Simeon; Blackwell, Ashely; Taylor, Keylantra; Sarkisov, Sergey; Patel, Darayas; Mele, Paolo; Koplitz, Brent

    2015-08-01

    Huge number of new photonic devices, including light emitters, chemical sensors, and energy harvesters, etc. can be made of the nanocomposite coatings produced by the new multi-beam pulsed laser deposition (MB-PLD) process. We provide a short review of the conventional single-beam PLD method and explain why it is poorly suitable for making nanocomposite coatings. Then we describe the new MB-PLD process and system, particularly the multiple-beam matrix assisted pulsed laser evaporation (MB-MAPLE) version with laser beam scanning and plume direction control. The latter one is particularly designed to make organic (polymer) - inorganic functionalized nanocomposite coatings. Polymer film serves as a host for inorganic nanoparticles that add a specific functionality to the film. We analyze the properties of such coatings using the examples of poly(methyl methacrylate) (PMMA) films impregnated with the nanoparticles of rare-earth (RE) upconversion phosphors. They demonstrated the preservation of microcrystalline structure and bright upconversion emission in visible region of the phosphor nanoparticles after they were transferred in the polymer matrix during the MB-MAPLE process. The proposed technology has thus proven to serve its purpose: to make functionalized polymer nanocomposite coatings for a various potential applications.

  10. SHG microscopy excited by polarization controlled beam for three-dimensional molecular orientation measurement

    NASA Astrophysics Data System (ADS)

    Yoshiki, K.; Hashimoto, M.; Araki, T.

    2006-08-01

    We have developed a second-harmonic-generation (SGH) microscope to observe the three-dimensional molecular orientation with three-dimensional high spatial resolution using a polarization mode converter. The mode converter consists of a parallel-aligned nematic-liquid-crystal spatial-light-modulator (PAL-SLM) and quarter-waveplates, and converts a incident linearly polarized beam to orthogonal linearly polarized beams or radially polarized beam. We combined the mode converter with SHG microscope to obtain the local information of the three-dimensional molecular orientation. We demonstrated the detection of three-dimensional molecular orientation of collagen fiber in human Achilles' tendon. For high precision three-dimensional molecular orientation measurement, we propose a technique to calibrate the dependence of SHG detection efficiencies on molecular orientation using a liposome.

  11. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    NASA Astrophysics Data System (ADS)

    Podestà, Alessandro; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo

    2015-12-01

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO2) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  12. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1989-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  13. Nanomanufacturing of titania interfaces with controlled structural and functional properties by supersonic cluster beam deposition

    SciTech Connect

    Podestà, Alessandro E-mail: pmilani@mi.infn.it; Borghi, Francesca; Indrieri, Marco; Bovio, Simone; Piazzoni, Claudio; Milani, Paolo E-mail: pmilani@mi.infn.it

    2015-12-21

    Great emphasis is placed on the development of integrated approaches for the synthesis and the characterization of ad hoc nanostructured platforms, to be used as templates with controlled morphology and chemical properties for the investigation of specific phenomena of great relevance in interdisciplinary fields such as biotechnology, medicine, and advanced materials. Here, we discuss the crucial role and the advantages of thin film deposition strategies based on cluster-assembling from supersonic cluster beams. We select cluster-assembled nanostructured titania (ns-TiO{sub 2}) as a case study to demonstrate that accurate control over morphological parameters can be routinely achieved, and consequently, over several relevant interfacial properties and phenomena, like surface charging in a liquid electrolyte, and proteins and nanoparticles adsorption. In particular, we show that the very good control of nanoscale morphology is obtained by taking advantage of simple scaling laws governing the ballistic deposition regime of low-energy, mass-dispersed clusters with reduced surface mobility.

  14. Fundamental tribological properties of ion-beam-deposited boron nitride films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.

    1990-01-01

    The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

  15. Abrasion resistance of titanium nitride coatings formed on titanium by ion-beam-assisted deposition.

    PubMed

    Sawase, T; Yoshida, K; Taira, Y; Kamada, K; Atsuta, M; Baba, K

    2005-02-01

    To improve the physical properties of the pure titanium surface, thin titanium nitride (TiN) films were deposited by means of ion-beam-assisted deposition. Film structure was confirmed as TiN by X-ray diffraction analysis. Surface hardness and abrasion resistance were significantly improved on TiN-coated specimens. Five combinations of oral hygiene instruments and materials were applied to the specimens as simulations of the oral environment. Treatment with the metal scaler and ultrasonic scaler severely changed the surface features and significantly increased the surface roughness parameters on pure titanium controls, whereas only small scratches and dull undulations were seen on the TiN-coated specimens. Profilometric tracings and scanning electron micrographs demonstrated the improved abrasion resistance of the TiN-coated specimens. PMID:15641983

  16. Ion beam sputter deposition of V 2O 5 thin films

    NASA Astrophysics Data System (ADS)

    Gallasch, T.; Stockhoff, T.; Baither, D.; Schmitz, G.

    V 2O 5 thin films were deposited by means of dc-ion beam sputtering. To determine the influence of various deposition parameters, samples were characterized by X-ray diffractometry and transmission electron microscopy. Using electron energy loss spectroscopy, the oxidation state of vanadium was quantified based on the chemical shift of absorption edges. Measurement of in-plane direct current showed that the electronic conductivity varies over several orders of magnitude depending on the preparation conditions. The desired structure suitable for battery applications is achieved by sputtering under partial pressure of oxygen and suitable post-annealing under ambient atmosphere. Reversible intercalation of Li into the produced thin films was demonstrated.

  17. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO xN y) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized.

  18. Simultaneous Power Deposition Detection of Two EC Beams with the BIS Analysis in Moving TCV Plasmas

    NASA Astrophysics Data System (ADS)

    Curchod, L.; Pochelon, A.; Decker, J.; Felici, F.; Goodman, T. P.; Moret, J.-M.; Paley, J. I.

    2009-11-01

    Modulation of power amplitude is a widespread to determine the radial absorption profile of externally launched power in fusion plasmas. There are many techniques to analyze the plasma response to such a modulation. The break-in-slope (BIS) analysis can draw an estimated power deposition profile for each power step up. In this paper, the BIS analysis is used to monitor the power deposition location of one or two EC power beams simultaneously in a non-stationary plasma being displaced vertically in the TCV tokamak vessel. Except from radial discrepancies, the results have high time resolution and compare well with simulations from the R2D2-C3PO-LUKE ray-tracing and Fokker-Planck code suite.

  19. Study And Comparison Of Silver Mirrors Deposited On Different Substrates By Electron-Beam Gun Method

    SciTech Connect

    Asl, Jahanbakhsh Mashaiekhy; Shafieizadeh, Zahra; Sabbaghzadeh, Jamshid; Anaraki, Mahdi

    2010-12-23

    Choosing the right substrate is one of the important factors for improving quality parameters of thin films such as adhesion between layers and substrates. The selected substrate should have proper physical and chemical compatibility with deposited thin film. In this paper, we have been investigated four different types of high reflective laser mirrors that were produced in similar conditions on four different kinds of substrates including copper, stainless steel, brass, and nickel. We used electron-beam gun method for deposition of silver layers. At the end we compared theoretical results with practical results that were yielded by laser damage threshold test. It was shown that brass is the best choice for silver metal mirrors as a substrate.

  20. Energy deposition in selected-mammalian cell for several-MeV single-proton beam

    NASA Astrophysics Data System (ADS)

    Ding, K.; Yu, Z.

    2007-05-01

    The phenomena resulting from interaction between ion beam and mammalian cell pose important problems for biological applications. Classic Bethe-Bloch theory utilizing attached V79 mammalian cell has been conducted in order to establish the stopping powers of the mammalian cell for several-MeV single-proton microbeam. Based on the biological structure of the mammalian cell, a physical model is proposed which presumes that the attached cell is simple MWM model. According to this model and Monte Carlo simulation, we studied the energy deposition and its ratio on the selected attached mammalian cell for MeV proton implantation.

  1. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan; Comes, Ryan B.; Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei

    2015-03-01

    Epitaxial NbO2 thin films were synthesized on Al2O3 (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO2. Through XPS, it was found that there was a ~ 1.3 nm thick Nb2O5 layer on the surface and the bulk of the thin film was NbO2. The epitaxial relationship between NbO2 film and substrate was determined. Electrical transport measurement as a function of temperature showed that the conduction mechanism could be described by variable range hopping mechanism.

  2. Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

    SciTech Connect

    Spinella, C.; Lombardo, S. ); Campisano, S.U. )

    1990-08-06

    The amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320--480 {degree}C. At each irradiation temperature the average grain diameter increases linearly with the Kr dose, while the grain density remains constant within the experimental accuracy. The growth rate follows a complex behavior which can be described by dynamic defect generation and annihilation. The absolute value of the grain growth rate is equal to that of the ion-assisted epitaxial layer by layer crystallization in the silicon (111) orientation. This result can be related to the crystal grain structure and morphology.

  3. Direct evidence of strongly inhomogeneous energy deposition in target heating with laser-produced ion beams.

    PubMed

    Brambrink, E; Schlegel, T; Malka, G; Amthor, K U; Aléonard, M M; Claverie, G; Gerbaux, M; Gobet, F; Hannachi, F; Méot, V; Morel, P; Nicolai, P; Scheurer, J N; Tarisien, M; Tikhonchuk, V; Audebert, P

    2007-06-01

    We report on strong nonuniformities in target heating with intense, laser-produced proton beams. The observed inhomogeneity in energy deposition can strongly perturb equation of state (EOS) measurements with laser-accelerated ions which are planned in several laboratories. Interferometric measurements of the target expansion show different expansion velocities on the front and rear surfaces, indicating a strong difference in local temperature. The nonuniformity indicates at an additional heating mechanism, which seems to originate from electrons in the keV range. PMID:17677318

  4. Dispersive ground plane core-shell type optical monopole antennas fabricated with electron beam induced deposition.

    PubMed

    Acar, Hakkı; Coenen, Toon; Polman, Albert; Kuipers, Laurens Kobus

    2012-09-25

    We present the bottom-up fabrication of dispersive silica core, gold cladding ground plane optical nanoantennas. The structures are made by a combination of electron-beam induced deposition of silica and sputtering of gold. The antenna lengths range from 300 to 2100 nm with size aspect ratios as large as 20. The angular emission patterns of the nanoantennas are measured with angle-resolved cathodoluminescence spectroscopy and compared with finite-element methods. Good overall correspondence between the the measured and calculated trends is observed. The dispersive nature of these plasmonic monopole antennas makes their radiation profile highly tunable. PMID:22889269

  5. Ion beam assisted deposition of organic molecules: a physical way to realize OLED structures

    NASA Astrophysics Data System (ADS)

    Moliton, André; Antony, Rémi; Troadec, David; Ratier, Bernard

    2000-05-01

    We demonstrate how the quantum efficiency of an organic light-emitting diode can be improved by a physical way based on the ion beam assisted deposition: the recombination current can be increased by an enhancement of the minority carrier injection while the total current can be decreased by generation of electron traps which reduced the majority current. The quantum efficiency of fluorescence can be also improved by a layer densification with a limitation of the nonradiative centers. As a result, the quantum efficiency of the structure ITO/Helium assisted Alq3/unassisted Alq3/Ca/Al is improved (by around a factor 10) in relation with a virgin structure.

  6. Substrate effects on the electron-beam-induced deposition of platinum from a liquid precursor

    NASA Astrophysics Data System (ADS)

    Donev, Eugenii U.; Schardein, Gregory; Wright, John C.; Hastings, J. Todd

    2011-07-01

    Focused electron-beam-induced deposition using bulk liquid precursors (LP-EBID) is a new nanofabrication technique developed in the last two years as an alternative to conventional EBID, which utilizes cumbersome gaseous precursors. Furthermore, LP-EBID using dilute aqueous precursors has been demonstrated to yield platinum (Pt) nanostructures with as-deposited metal content that is substantially higher than the purity achieved by EBID with currently available gaseous precursors. This advantage of LP-EBID--along with the ease of use, low cost, and relative innocuousness of the liquid precursors--holds promise for its practical applicability in areas such as rapid device prototyping and lithographic mask repair. One of the feasibility benchmarks for the LP-EBID method is the ability to deposit high-fidelity nanostructures on various substrate materials. In this study, we report the first observations of performing LP-EBID on bare and metal-coated silicon-nitride membranes, and compare the resulting Pt deposits to those obtained by LP-EBID on polyimide membranes in terms of nucleation, morphology, size dependence on electron dose, and purity.

  7. Substrate effects on the electron-beam-induced deposition of platinum from a liquid precursor.

    PubMed

    Donev, Eugenii U; Schardein, Gregory; Wright, John C; Hastings, J Todd

    2011-07-01

    Focused electron-beam-induced deposition using bulk liquid precursors (LP-EBID) is a new nanofabrication technique developed in the last two years as an alternative to conventional EBID, which utilizes cumbersome gaseous precursors. Furthermore, LP-EBID using dilute aqueous precursors has been demonstrated to yield platinum (Pt) nanostructures with as-deposited metal content that is substantially higher than the purity achieved by EBID with currently available gaseous precursors. This advantage of LP-EBID--along with the ease of use, low cost, and relative innocuousness of the liquid precursors--holds promise for its practical applicability in areas such as rapid device prototyping and lithographic mask repair. One of the feasibility benchmarks for the LP-EBID method is the ability to deposit high-fidelity nanostructures on various substrate materials. In this study, we report the first observations of performing LP-EBID on bare and metal-coated silicon-nitride membranes, and compare the resulting Pt deposits to those obtained by LP-EBID on polyimide membranes in terms of nucleation, morphology, size dependence on electron dose, and purity. PMID:21373685

  8. Material properties of ion beam deposited oxides for the optoelectronic industry

    NASA Astrophysics Data System (ADS)

    Devasahayam, Adrian J.; Agatic, Ivo; Druz, Boris; Hegde, Hari; Zaritsky, Isaac; Das, Suhit R.; Boudreau, Marcel; Yin, Tao; Mallard, Robert; Laframboise, Sylvain

    2002-05-01

    High quality, dense films of SiO2, Al2O3, Ta2O5, and TiO2 were deposited with an ion beam deposition system (IBD). IBD has significant advantages over other techniques in terms of directionality, stress control, repeatability, thermal stability, and film uniformity [J. J. Cuomo, J. M. E. Harper, C. R. Guarnieri, D. S. Yee, L. J. Atanasio, J. Angilello, C. T. Wu, and R. H. Hammond, J. Vac. Sci. Technol. 20, 349 (1982)]. To decrease the surface damage induced by ion bombardment, a multi-energy process was developed. This is especially important for laser facet coatings. The oxide films were optimized for the desired refractive index and zero absorption. Stress values of -0.2 to -0.5 GPa (compressive) and extremely good uniformity (<0.2%) of film thickness and refractive index were obtained. The impact of the IBD deposition angle on film stress was also investigated. These films showed excellent thermal stability with virtually no degradation of optical properties after three 1 h anneals at 350 °C (Δn<0.0124). With the exception of TiO2, all films remained in compressive stress after annealing. TiO2 turned tensile. With the variety of oxide materials developed, designing an anti-reflective or highly reflective stack, which satisfies requirements of stress, uniformity, deposition rate, and reflectance, becomes a matter of choosing the appropriate material set.

  9. Considerations on the Design of a Molecular Frequency Standard Based on the Molecular Beam Electric Resonance Method

    NASA Technical Reports Server (NTRS)

    Hughes, Vernon W.

    1959-01-01

    The use of a rotational state transition as observed by the molecular beam electric resonance method is discussed as a possible frequency standard particularly in the millimeter wavelength range. As a promising example the 100 kMc transition between the J = 0 and J = 1 rotational states of Li 6F19 is considered. The relative insensitivity of the transition frequency to external electric and magnetic fields and the low microwave power requirements appear favorable; the small fraction of the molecular beam that is in a single rotational state is a limiting factor.

  10. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schultz, J.A.; Schmidt, H.; Liu, Y.L.; Auciello, O.; Barr, T.; Chang, R.P.H.

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  11. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. ); Lin, Y.P. Northwestern Univ., Evanston, IL . Dept. of Materials Science); Schultz, J.A. ); Schmidt, H. ); Liu, Y.L. (Argonne National Lab., IL (United States

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  12. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    NASA Astrophysics Data System (ADS)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  13. Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope.

    PubMed

    Wu, H M; Stern, L A; Chen, J H; Huth, M; Schwalb, C H; Winhold, M; Porrati, F; Gonzalez, C M; Timilsina, R; Rack, P D

    2013-05-01

    The ion beam induced nanoscale synthesis of platinum nanowires using the trimethyl (methylcyclopentadienyl)platinum(IV) (MeCpPt(IV)Me3) precursor is investigated using helium and neon ion beams in the gas field ion microscope. The He(+) beam induced deposition resembles material deposited by electron beam induced deposition with very small platinum nanocrystallites suspended in a carbonaceous matrix. The He(+) deposited material composition was estimated to be 16% Pt in a matrix of amorphous carbon with a large room-temperature resistivity (∼3.5 × 10(4)-2.2 × 10(5) μΩ cm) and temperature-dependent transport behavior consistent with a granular material in the weak intergrain tunnel coupling regime. The Ne(+) deposited material has comparable composition (17%), however a much lower room-temperature resistivity (∼600-3.0 × 10(3) μΩ cm) and temperature-dependent electrical behavior representative of strong intergrain coupling. The Ne(+) deposited nanostructure has larger platinum nanoparticles and is rationalized via Monte Carlo ion-solid simulations which show that the neon energy density deposited during growth is much larger due to the smaller ion range and is dominated by nuclear stopping relative to helium which has a larger range and is dominated by electronic stopping. PMID:23548767

  14. Phosphorylation modifies the molecular stability of β-amyloid deposits

    NASA Astrophysics Data System (ADS)

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-04-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain.

  15. Phosphorylation modifies the molecular stability of β-amyloid deposits

    PubMed Central

    Rezaei-Ghaleh, Nasrollah; Amininasab, Mehriar; Kumar, Sathish; Walter, Jochen; Zweckstetter, Markus

    2016-01-01

    Protein aggregation plays a crucial role in neurodegenerative diseases. A key feature of protein aggregates is their ubiquitous modification by phosphorylation. Little is known, however, about the molecular consequences of phosphorylation of protein aggregates. Here we show that phosphorylation of β-amyloid at serine 8 increases the stability of its pathogenic aggregates against high-pressure and SDS-induced dissociation. We further demonstrate that phosphorylation results in an elevated number of hydrogen bonds at the N terminus of β-amyloid, the region that is critically regulated by a variety of post-translational modifications. Because of the increased lifetime of phosphorylated β-amyloid aggregates, phosphorylation can promote the spreading of β-amyloid in Alzheimer pathogenesis. Our study suggests that regulation of the molecular stability of protein aggregates by post-translational modifications is a crucial factor for disease progression in the brain. PMID:27072999

  16. Ion and electron beam processing of condensed molecular solids to form thin films

    SciTech Connect

    Ruckman, M.W.; Strongin, M.; Mowlem, J.K.; Moore, J.F.; Strongin, D.R.

    1992-12-31

    Electron and ion beams can be used to deposit thin films and etch surfaces using gas phase precursors. However, the generation of undesirable gas phase products and the diffusion of the reactive species beyond the region irradiated by the electron or ion beam can limit selectivity. In this paper, the feasibility of processing condensed precursors such as diborane, tri-methyl aluminum, ammonia and water at 78 K with low energy ( 100--1000 eV) electron and ion beams (Ar{sup +}, N{sub 2}{sup +} and H{sub 2}{sup +}) ranging in current density from 50 nA to several {mu}a per cm{sup 2} is examined. It was found that boron, boron nitride and stoichiometric aluminum oxide films could be deposited from the condensed volatile; species using charged particle beams and some of the physical and chemical aspects and limitations of this new technique are discussed.

  17. Ion and electron beam processing of condensed molecular solids to form thin films

    SciTech Connect

    Ruckman, M.W.; Strongin, M. ); Mowlem, J.K.; Moore, J.F.; Strongin, D.R. . Dept. of Chemistry)

    1992-01-01

    Electron and ion beams can be used to deposit thin films and etch surfaces using gas phase precursors. However, the generation of undesirable gas phase products and the diffusion of the reactive species beyond the region irradiated by the electron or ion beam can limit selectivity. In this paper, the feasibility of processing condensed precursors such as diborane, tri-methyl aluminum, ammonia and water at 78 K with low energy ( 100--1000 eV) electron and ion beams (Ar[sup +], N[sub 2][sup +] and H[sub 2][sup +]) ranging in current density from 50 nA to several [mu]a per cm[sup 2] is examined. It was found that boron, boron nitride and stoichiometric aluminum oxide films could be deposited from the condensed volatile; species using charged particle beams and some of the physical and chemical aspects and limitations of this new technique are discussed.

  18. Laser beam soldering of fine-pitch technology packages with solid solder deposits

    NASA Astrophysics Data System (ADS)

    Pucher, Hans-Joerg; Glasmacher, Mathias; Geiger, Manfred

    1996-04-01

    Micro electronics is a key technology attracting the attention of information, communication, automation and data processing technologies. Ongoing miniaturization combined with an increasing number of I/Os has inevitably lead to ever finer lead geometries. Therefore the demands put upon the surface mount technology are increasing continuously. Processing of high lead count fine pitch packages, for example those which are applied in high-capacity computers, has not increased the demands put upon the assembly process only, but also on the connecting techniques. By reflow soldering with laser beam radiation the benefits from the tool `laser beam' are used extensively, for example contact and force free processing, strictly localized heating and the good controllability thereof, formation of fine crystalline and homogeneous structures, etc. Within the scope of this paper the fundamentals of laser beam soldering are discussed for fine pitch lead frames (pitch 300 micrometers ) for plastic packages, made by a modified CuFe2P alloy with a 5 micrometers Sn90Pb plating, on solid solder depths (Sn63Pb) performed by the so called High-Pad process. These investigations are unique in the field of laser beam soldering and are carried out by means of a Nd:YAG-laser. A pyrometer is used for detection of the emission of the temperature radiation of the joining area for process control. The additional use of a high-speed camera gives a detailed description of the melting and wetting process. The influence of laser beam parameters and the volume of the solid solder deposits on the joining result are presented.

  19. Comparison of optical resistance of ion assisted deposition and standard electron beam deposition methods for high reflectance dielectric coatings

    NASA Astrophysics Data System (ADS)

    Melninkaitis, A.; Maciulevicius, M.; Rakickas, T.; Miksys, D.; Grigonis, R.; Sirutkaitis, V.; Skrebutenas, A.; Buzelis, R.; Drazdys, R.; Abromavicius, G.

    2005-09-01

    The ion assisted thin film deposition (IAD) method has been used extensively for more than two decades, but questions about possibility of improving of the laser-induced damage threshold (LIDT) by this method compared with the conventional electron-beam evaporation (non-IAD) method are still not fully answered. A more complete understanding of different factors that can influence laser-induced damage threshold is necessary for continued development of multilayer dielectric coatings optimized for high-power laser applications. To clarify these factors we performed comparison of LIDT for IAD and non-IAD coatings in nanosecond and femtosecond pulse ranges. High reflectance mirrors at 800 nm and 532 nm were tested. Mirror coatings were made of ZrO2 and SiO2. Automated LIDT measurements were performed according to the requirements of current ISO 11254-2 standard. Two lasers were used for the measurements: Nd:YAG (λ = 532 nm, τ = 5 ns) and Ti:Sapphire (λ = 800 nm, τ = 130 fs). Measurements at 800 nm and 532 nm were performed at 1-kHz and 10 Hz pulse repetition rate respectively (S-on-1 test). The damage morphology of coatings was characterized by Nomarski microscopy and relation of LIDT with coating parameters was analyzed.

  20. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition

    DOE PAGESBeta

    Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; Stanford, Michael G.; Plank, Harald; Rack, Philip D.

    2016-06-10

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. This is due, inpart, to the dynamic interplay between electron–solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties.more » Moreover, a hybrid Monte Carlo–continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. In using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors.« less

  1. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-04-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  2. Simulation-Guided 3D Nanomanufacturing via Focused Electron Beam Induced Deposition.

    PubMed

    Fowlkes, Jason D; Winkler, Robert; Lewis, Brett B; Stanford, Michael G; Plank, Harald; Rack, Philip D

    2016-06-28

    Focused electron beam induced deposition (FEBID) is one of the few techniques that enables direct-write synthesis of free-standing 3D nanostructures. While the fabrication of simple architectures such as vertical or curving nanowires has been achieved by simple trial and error, processing complex 3D structures is not tractable with this approach. In part, this is due to the dynamic interplay between electron-solid interactions and the transient spatial distribution of absorbed precursor molecules on the solid surface. Here, we demonstrate the ability to controllably deposit 3D lattice structures at the micro/nanoscale, which have received recent interest owing to superior mechanical and optical properties. A hybrid Monte Carlo-continuum simulation is briefly overviewed, and subsequently FEBID experiments and simulations are directly compared. Finally, a 3D computer-aided design (CAD) program is introduced, which generates the beam parameters necessary for FEBID by both simulation and experiment. Using this approach, we demonstrate the fabrication of various 3D lattice structures using Pt-, Au-, and W-based precursors. PMID:27284689

  3. Biaxial Texture Evolution in MgO Films Fabricated Using Ion Beam-Assisted Deposition

    NASA Astrophysics Data System (ADS)

    Xue, Yan; Zhang, Ya-Hui; Zhao, Rui-Peng; Zhang, Fei; Lu, Yu-Ming; Cai, Chuan-Bing; Xiong, Jie; Tao, Bo-Wan

    2016-07-01

    The growth of multifunctional thin films on flexible substrates is important technologically, because flexible electronics require such a platform. In this study, we examined the evolution of biaxial texture in MgO films prepared using ion beam-assisted deposition (IBAD) on a Hastelloy substrate. Texture and microstructure developments were characterized through in situ reflection high-energy electron diffraction monitoring, x-ray diffraction, and atomic force microscopy, which demonstrated that biaxial texture was developed during the nucleation stage (~2.2 nm). The best biaxial texture was obtained with a thickness of approximately 12 nm. As MgO continued to grow, the influence of surface energy was reduced, and film growth was driven by the attempt to minimize volume free-energy density. Thus the MgO grains were subsequently rotated at the (002) direction toward the ion beam. In addition, an approach was developed for accelerating in-plane texture evolution by pre-depositing an amorphous MgO layer before IBAD.

  4. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zheng, Mao

    Iron base superconductor have gained much attention in the research community. They offer great potentials to improve our understanding of the subject of superconductivity by having another family of high temperature superconductors to compare and contrast to the cuprates. Practically, the iron based superconductors seems to be even better candidates for applications in power generation and power transmission. Iron telluride is regarded as the parent compound of the "11" family, the family of iron chalcogenide that has the simplest structure. Iron telluride itself is not a superconductor, by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly crystalline in just a few unit cells. We studied oxygen doping to the iron telluride thin films and the resultant superconductivity. We characterized the sample with AFM, XRD, transport, and STEM-EELS, and we found that interfacial strain is not an essential ingredient of superconductivity in this particular case. We investigated the doping conditions for two candidate oxygen doping modes: substitution and interstitial. We found that substitution occurs when the film grown in oxygen, while interstitial oxygen is primarily incorporated during annealing after growth. The substitutional oxygen are concentrated in small local regions where substitution is around 100%, but does not contribute to superconductivity. We estimated substitutional oxygen to be about 5%, and is the proximate cause of superconductivity. Hall experiment on our sample showed a shift of dominant carrier type from holes to electrons around 35 K, but the transition was set in motion as early as the structural phase transition around 70 K. We

  5. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  6. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    SciTech Connect

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-15

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density, heat and momentum transport equations along with neutral density, and momentum transport equations. Transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. It is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.

  7. Comparisons between tokamak fueling of gas puffing and supersonic molecular beam injection in 2D simulations

    DOE PAGESBeta

    Zhou, Y. L.; Wang, Z. H.; Xu, X. Q.; Li, H. D.; Feng, H.; Sun, W. G.

    2015-01-09

    Plasma fueling with high efficiency and deep injection is very important to enable fusion power performance requirements. It is a powerful and efficient way to study neutral transport dynamics and find methods of improving the fueling performance by doing large scale simulations. Furthermore, two basic fueling methods, gas puffing (GP) and supersonic molecular beam injection (SMBI), are simulated and compared in realistic divertor geometry of the HL-2A tokamak with a newly developed module, named trans-neut, within the framework of BOUT++ boundary plasma turbulence code [Z. H. Wang et al., Nucl. Fusion 54, 043019 (2014)]. The physical model includes plasma density,more » heat and momentum transport equations along with neutral density, and momentum transport equations. In transport dynamics and profile evolutions of both plasma and neutrals are simulated and compared between GP and SMBI in both poloidal and radial directions, which are quite different from one and the other. It finds that the neutrals can penetrate about four centimeters inside the last closed (magnetic) flux surface during SMBI, while they are all deposited outside of the LCF during GP. Moreover, it is the radial convection and larger inflowing flux which lead to the deeper penetration depth of SMBI and higher fueling efficiency compared to GP.« less

  8. Investigations of high mobility single crystal chemical vapor deposition diamond for radiotherapy photon beam monitoring

    SciTech Connect

    Tromson, D.; Descamps, C.; Tranchant, N.; Bergonzo, P.; Nesladek, M.; Isambert, A.

    2008-03-01

    The intrinsic properties of diamond make this material theoretically very suitable for applications in medical physics. Until now ionization chambers have been fabricated from natural stones and are commercialized by PTW, but their fairly high costs and long delivery times have often limited their use in hospital. The properties of commercialized intrinsic polycrystalline diamond were investigated in the past by many groups. The results were not completely satisfactory due to the nature of the polycrystalline material itself. In contrast, the recent progresses in the growth of high mobility single crystal synthetic diamonds prepared by chemical vapor deposition (CVD) technique offer new alternatives. In the framework of the MAESTRO project (Methods and Advanced Treatments and Simulations for Radio Oncology), the CEA-LIST is studying the potentialities of synthetic diamond for new techniques of irradiation such as intensity modulated radiation therapy. In this paper, we present the growth and characteristics of single crystal diamond prepared at CEA-LIST in the framework of the NoRHDia project (Novel Radiation Hard CVD Diamond Detector for Hadrons Physics), as well as the investigations of high mobility single crystal CVD diamond for radiotherapy photon beam monitoring: dosimetric analysis performed with the single crystal diamond detector in terms of stability and repeatability of the response signal, signal to noise ratio, response speed, linearity of the signal versus the absorbed dose, and dose rate. The measurements performed with photon beams using radiotherapy facilities demonstrate that single crystal CVD diamond is a good alternative for air ionization chambers for beam quality control.

  9. Ion-beam analysis of CuInSe2 solar cells deposited on polyimide foil.

    PubMed

    Spemann, D; Lorenz, M; Butz, T; Otte, K

    2004-06-01

    CuInSe(2) (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration-depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber. PMID:15179537

  10. Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon

    NASA Astrophysics Data System (ADS)

    La Ferla, A.; Priolo, F.; Spinella, C.; Rimini, E.; Baroetto, F.; Ferla, G.

    1989-03-01

    The dependence of ion-beam enhanced epitaxial growth of amorphous Si layers on impurities either dissolved in the film or present at the film-substrate interface is considered. In the case of ion implanted layers, electrically active dopants, like B, P, As at concentrations above 1 × 10 20/cm 3, enhance the rate by a factor of 2 with respect to the undoped layer. The enhancement shows also a weak dependence on the dopant concentration. Inert impurities, like Ar, which prevent pure thermal regrowth, do not show any appreciable influence on the ion-beam-induced growth rate. Chemical vapor deposited Si layers with a thin native interfacial oxide layer can also be epitaxially regrown under ion irradiation. A critical fluence is needed before the interfacial oxide breaks down and broadens, allowing the epitaxial crystallization to take place. This process is characterized by an activation energy of 0.44 eV. The complex phenomenon of ion-beam-induced crystallization involves a dynamical interaction between production and annealing of point defects. The presence of electrically active dopants probably influences the lifetime of point defects. Impurities which prevent thermal regrowth are instead dissolved by ballistic effects and/or radiation-enhanced mixing.

  11. Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam

    NASA Astrophysics Data System (ADS)

    Sazonov, R.; Kholodnaya, G.; Ponomarev, D.; Remnev, G.; Khailov, I.

    2014-11-01

    This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO2. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm2. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy.

  12. Multilayer permalloy films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rook, K.; Zeltser, A. M.; Artman, J. O.; Laughlin, D. E.; Kryder, M. H.

    1991-04-01

    The magnetic properties of single-layer and multilayer 111-line textured Cu and Permalloy films, deposited by MBE on 111-plane Si substrates, have been measured by both ferromagnetic resonance and M-H loop tracer; microstructural characterizations were conducted by TEM, XRD, and reflection high-energy electron diffraction. The single-layer films had lower easy-axis coercivity H(ce) and a lower in-plane anisotropy field than sputter-deposited Permalloy films of similar thickness. The five-layer, Cu-interlayer separated Permalloy structures, having a magnetic thickness in excess of 100 nm, exhibited lower H(ce) than equivalent single-layer films.

  13. Monte Carlo approach to the spatial deposition of energy by electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Green, A. E. S.

    1974-01-01

    The Monte Carlo (MC) and continuous slowdown approximation (CSDA) approaches to the spatial deposition of energy by electrons are compared using the same detailed atomic cross section (DACS). It is found that the CSDA method overestimates the amount of energy that is deposited near the end of the path for electrons above a few hundred electron volts. The MC results are in approximate agreement with experimental data in such a way as to be relatively independent of the actual gas used. Our MC results are extended to obtain the three-dimensional deposition of energy by sub-keV electrons in molecular hydrogen.

  14. Deposition of an energetic Al cluster on Si(111) substrate: a molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Li, He; Zongning, Xia; Hao, Zhang; Jiayou, Feng; Yunwen, Lu

    1998-11-01

    A molecular dynamics simulation on the deposition of an energetic Al cluster on Si(111) substrate was studied. We employed the Stillinger-Weber three-body potential to simulate the Si substrate and the Born-Mayer-Higgins potential to compute the interactions between cluster and substrate. For one impacting Al cluster, the migration distance of the cluster atoms and the deposition morphology were investigated under different substrate temperatures, impacting cluster energies and cluster sizes. It can be found that diffusion distance increases with the increasing substrate temperature, cluster energy and cluster size; moreover the deposition morphologies also change under similar conditions.

  15. Stability of a current carrying single nanowire of tungsten (W) deposited by focused ion beam

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    2016-02-01

    We report an investigation on the stability of single W nanowire (NW) under direct current stressing. The NW of width ≈ 80 nm and thickness ≈ 100 nm was deposited on a SiO2/Si substrate by Focused Ion Beam (FIB) of Ga ions using W(CO)6 as a precursor. Such nanowires, used as interconnects in nanoelectronics, contain C and Ga in addition to W. The stability studies, done for the first time in such FIB deposited NWs, show that under current stressing these NWs behave very differently from that observed in conventional metal NWs or interconnects. The failure of such FIB deposited NW occurs at a relatively low current density (˜1011 A/m2) which is an order or more less than that seen in conventional metal NWs. The failure accompanies with formation of voids and hillocks, suggesting ionic migration as the cause of failure. However, the polarities of void and hillock formations are opposite to those observed in conventional metal interconnects. This observation along with preferential agglomeration of Ga ions in hillocks suggests that the ionic migration in such NWs is dominated by direct force as opposed to the migration driven by electron wind force in conventional metal interconnects.

  16. Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities.

    PubMed

    Gazzadi, Gian Carlo; Frabboni, Stefano

    2015-01-01

    Suspended nanowires (SNWs) have been deposited from Co-carbonyl precursor (Co2(CO)8) by focused electron beam induced deposition (FEBID). The SNWs dimensions are about 30-50 nm in diameter and 600-850 nm in length. The as-deposited material has a nanogranular structure of mixed face-centered cubic (FCC) and hexagonal close-packed (HCP) Co phases, and a composition of 80 atom % Co, 15 atom % O and 5 atom % C, as revealed by transmission electron microscopy (TEM) analysis and by energy-dispersive X-ray (EDX) spectroscopy, respectively. Current (I)-voltage (V) measurements with current densities up to 10(7) A/cm(2) determine different structural transitions in the SNWs, depending on the I-V history. A single measurement with a sudden current burst leads to a polycrystalline FCC Co structure extended over the whole wire. Repeated measurements at increasing currents produce wires with a split structure: one half is polycrystalline FCC Co and the other half is graphitized C. The breakdown current density is found at 2.1 × 10(7) A/cm(2). The role played by resistive heating and electromigration in these transitions is discussed. PMID:26199833

  17. Power deposition by neutral beam injected fast ions in field-reversed configurations

    NASA Astrophysics Data System (ADS)

    Takahashi, Toshiki; Kato, Takayuki; Kondoh, Yoshiomi; Iwasawa, Naotaka

    2004-08-01

    The effects of Coulomb collisions on neutral beam (NB) injected fast ions into field-reversed configuration (FRC) plasmas are investigated by calculating the single particle orbits, where the ions are subject to the slowing-down and pitch-angle collisions. The Monte Carlo method is used for the pitch-angle scattering, and the friction term is added to the equation of motion to show the effects of the slowing-down collision, such as the deposited power profile. The calculation parameters used are relevant to the NB injection on the FRC injection experiment device [T. Asai, Y. Suzuki, T. Yoneda, F. Kodera, M. Okubo, and S. Goto, Phys. Plasmas 7, 2294 (2000)]. It is found that the dominant local power deposition occurs in the open field region between the X point and the mirror point because of a concentration of fast ions and a longer duration travel at the mirror reflection point. In the present calculation, the maximum deposited power to the FRC plasma is about 10% of the injected power. Although the pitch-angle scattering by Coulomb collision destroys the mirror confinement of NB injected fast ions, this effect is found to be negligible. The loss mechanism due to nonadiabatic fast ion motion, which is intrinsic in nonuniform FRC plasmas, has a much greater effect than the pitch-angle scattering by Coulomb collision.

  18. Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

    SciTech Connect

    Salokatve, A.; Toivonen, M.; Asonen, H.; Pessa, M.; Likonen, J.

    1996-12-31

    The authors have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. They show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterize the carbon and net acceptor concentrations of their GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.

  19. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    NASA Astrophysics Data System (ADS)

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-01

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  20. Measurement and Analysis of Rotational Energy of Nitrogen Molecular Beam by REMPI

    SciTech Connect

    Mori, H.; Yamaguchi, H.; Kataoka, K.; Sugiyama, N.; Ide, K.; Niimi, T.

    2008-12-31

    Molecular beams are powerful tools for diagnoses of solid surfaces and gas-surface interaction tests. Unfortunately, there are very few reports about experimental analysis of internal energy distribution (e.g. rotational energy) of molecular beams of diatomic or polyatomic molecules, because measurement of internal energy distribution is very difficult. Spectroscopic measurement techniques based on resonantly enhanced multiphoton ionization (REMPI) is very powerful for measurement in highly rarefied gas flows. In this study, the REMPI method is applied to measurement of rotational energy distribution of nitrogen molecular beams. The REMPI spectrum of the molecular beam indicates the rotational temperature higher than the translational temperature of 7.2 K estimated by assuming isentropic flows. The O and P branches of the REMPI spectrum correspond to the rotational temperature of 30 K, but the S branch of the spectrum deviates from that at 30 K. It seems to be because the non-equilibrium rotational energy distribution of the molecular beam deviates from the Boltzmann distribution.

  1. TAP studies of pallidium-silicon dioxide catalysts prepared by atomic beam deposition

    NASA Astrophysics Data System (ADS)

    Fushimi, Rebecca R.

    A novel approach for directly adding precise numbers of metal atoms in submonolayer amounts to the surface of micron-sized particles (catalysts or support particles) using a new apparatus of original construction that combines an Atomic Beam Deposition (ABD) system with a Temporal Analysis of Products (TAP-2) reactor system is presented. This technique provides a method to "atomically tailor" any catalyst surface to improve its performance. The method involves: (1) direct deposition of atomic species in precise known amounts, (2) well-defined, reproducible thermal processes to kinetically manipulate surface reactions, and (3) precise kinetic characterization of each catalyst state, which can be directly related to the intrinsic properties of the catalyst. The new approach is illustrated by the example of CO oxidation over a series of Pd/PdO catalysts. Catalysts of different loadings were prepared by direct atomic deposition of Pd and PdO in monolayer and submonolayer amounts on 250-micron silica particles. Preliminary characterization of the Pd deposits was performed using XPS, SEM and TEM. Precise kinetic characterization, was performed using pulse-response methods, temperature programmed reaction (TPR) and steady-state experiments. CO2 production during TPR experiments exhibited oscillatory behavior, which was attributed to structure forming reactions. Based on TPR and adsorption data a detailed mechanism of the reaction and a qualitative model of the evolution of catalytic structure under the influence of a reactive media were proposed. CO oxidation over monolayer Pd/PdO catalysts provokes a self-assembly process, and Pd clusterization along with the generation of CO2. The results provide an interesting and surprising kinetic map of the evolution of Pd reactivity.

  2. Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Burat, O.; Bouchier, D.; Stambouli, V.; Gautherin, G.

    1990-09-01

    We have studied boron nitride films deposited at room temperature by ion-beam-assisted deposition in an ultrahigh vacuum apparatus, with ion accelerating voltages ranging between 0.25 and 2 kV. By using complementarily in situ Auger electron spectrometry and ex situ nuclear analyses to determine the respective surface and bulk N concentrations in the deposited films, we were able to identify the different phases of the mechanism leading to the nitridation of evaporated boron by nitrogen ions. For low nitrogen/boron flux ratios, the incorporation of nitrogen seems to be only governed by ion implantation, and, with respect to the depth of the deposit, the surface is found largely depleted in nitrogen, while the N-incorporation yield remains close to one whatever the ion energy. Such a behavior is well verified as long as a critical bulk nitrogen concentration close to 5.5×1022 cm-3 has not been achieved. For concentrations greater than this, superstoichiometric material is obtained up to a saturation which corresponds to a bulk N incorporation ranging from 6 to 7×1022 cm-3. Further increase of the N/B flux ratio induces a strong diffusion process from N-rich bulk to N-depleted surface, which results in the nitridation of surface boron atoms and a loss of nitrogen by sputtering or desorption. The density measurements seem to indicate that the synthesized phase is close to h-BN. However, the density of B-rich layers ([N]/[B]≊0.2-0.3) is found to be very close to that calculated for a mixture of pure boron and c-BN. The transparency and microhardness of the synthesized BN have satisfying values for its application as a wear-resistant optical coating, but it is not c-BN.

  3. REFLEX: An energy deposition code that models the effects of electron reflection during electron beam heating tests

    SciTech Connect

    Stone, C.A. IV; Croessmann, C.D.; Whitley, J.B.

    1988-01-01

    This report describes an energy coupling model that considers electron reflection losses during electron beam heating experiments. This model is embodied on the REFLEX computer code, written in standard FORTRAN 77. REFLEX currently models energy deposition phenomena in three different sample geometries. These configurations include flat, cylindrical shell, and hemispherical shell surfaces. Given the electron beam operating parameters, REFLEX calculates the heat flux profile over a sample's surface, the total amount of energy deposited into a sample, and the percentage of the electron beam energy that is transferred to a sample. This document describes the energy deposition equations used in the REFLEX code; the program is described and detailed instructions are given regarding the input. Results are given for each geometry and possible experimental applications are presented. 3 refs., 20 figs., 11 tabs.

  4. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  5. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    PubMed

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  6. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition

    SciTech Connect

    Mayorov, V. A. Yafaysov, A. M.; Bogevolnov, V. B.; Radanstev, V. F.

    2010-05-15

    Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm{sup 2} and thickness from 0.5 to 5 {mu}m and hole concentration of 6.3 x 10{sup 16} cm{sup -3} (300 K) are obtained.

  7. Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lettieri, James

    Molecular beam epitaxy was used to grow epitaxial oxides on silicon substrates. The growth of BaO, SrO, EuO, and SrTiO3 are discussed with a focus on the general theme of integration of functional, epitaxial oxides into a silicon environment. Oxidation studies of various metal systems relevant for oxide on silicon epitaxy and integration are reported. Results demonstrate the catalytic nature of an alkaline earth metal at small concentrations to enable the oxidation of the poorly oxidizing metals at pressures lower than during deposition of the pure metal alone. Results from the deposition of various elements are presented. The aspects of the growth of alkaline earth oxides on silicon are explained. The transition from the silicon to the alkaline earth oxide as described through reflection high energy electron diffraction (RHEED) is presented and used to understand issues related to each stage of the growth. High quality, commensurate alkaline earth oxides are grown on silicon at room temperature and P O2 background ˜ 3 x 10-8 Torr. The growth of alkaline earth and rare earth oxide solid solutions and rare earth oxides (EuO) are described. The first reported epitaxial EuO on silicon is reported, enabled by the use of a thin buffer layer (13 A) of SrO. Using a strategy of transition from simple structures to the more complex, the growth of a perovskite (SrTiO3) on silicon is demonstrated. Growth of a structurally optimized perovskite structure entails the transformation of a thin interfacial alkaline earth oxide layer into the initial perovskite cells. SrTiO3 and La-doped SrTiO3 on silicon are used to integrate a piezoelectric relevant for microelectromechanical systems (MEMS) applications and a ferroelectric relevant for a ferroelectric random access memory (FRAM) architecture. A d33 value of over 400 pm/V under bias is measured for the piezoelectric (Pb(Mn1/3Nb 2/3)O3 -PbTiO3) and a remanent polarization of 25 muC/cm2 and fatigue free behavior (>1012 cycles) for a

  8. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    SciTech Connect

    Chadwick, Helen Hundt, P. Morten; Reijzen, Maarten E. van; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  9. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage

    NASA Astrophysics Data System (ADS)

    Chadwick, Helen; Hundt, P. Morten; van Reijzen, Maarten E.; Yoder, Bruce L.; Beck, Rainer D.

    2014-01-01

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes.

  10. Quantum state specific reactant preparation in a molecular beam by rapid adiabatic passage.

    PubMed

    Chadwick, Helen; Hundt, P Morten; van Reijzen, Maarten E; Yoder, Bruce L; Beck, Rainer D

    2014-01-21

    Highly efficient preparation of molecules in a specific rovibrationally excited state for gas/surface reactivity measurements is achieved in a molecular beam using tunable infrared (IR) radiation from a single mode continuous wave optical parametric oscillator (cw-OPO). We demonstrate that with appropriate focusing of the IR radiation, molecules in the molecular beam crossing the fixed frequency IR field experience a Doppler tuning that can be adjusted to achieve complete population inversion of a two-level system by rapid adiabatic passage (RAP). A room temperature pyroelectric detector is used to monitor the excited fraction in the molecular beam and the population inversion is detected and quantified using IR bleaching by a second IR-OPO. The second OPO is also used for complete population transfer to an overtone or combination vibration via double resonance excitation using two spatially separated RAP processes. PMID:25669393

  11. Depositions of molecular nanomagnets on graphene investigated with atomic force microscopy and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Walker, Sean; Vojvodin, Cameron; Li, Zhi; Willick, Kyle; Tang, Xiaowu (Shirley); Baugh, Jonathan

    Molecular nanomagnets display interesting quantum phenomena, and have been proposed as potential building blocks in a variety of nanoelectronic devices with applications to both quantum memory and quantum information processing. These devices often require deposition of the molecules either sparsely (e.g. for single molecule devices) or as a thin-film. Consequently, in order for these devices to be successfully realized, the nature of the interactions between nanomagnets and the surfaces on which they may be deposited needs to be understood. We have investigated the depositions of molecular nanomagnets on graphene using atomic force microscopy and Raman spectrocopy. The nanomagnets contained a range of chemical functional groups including long alkyl chains and extended π-systems of electrons. By comparing their binding affinities we learn about the nature of the interactions between the different functional groups and the graphene.

  12. Low-Volatility Model Demonstrates Humidity Affects Environmental Toxin Deposition on Plastics at a Molecular Level.

    PubMed

    Hankett, Jeanne M; Collin, William R; Yang, Pei; Chen, Zhan; Duhaime, Melissa

    2016-02-01

    Despite the ever-increasing prevalence of plastic debris and endocrine disrupting toxins in aquatic ecosystems, few studies describe their interactions in freshwater environments. We present a model system to investigate the deposition/desorption behaviors of low-volatility lake ecosystem toxins on microplastics in situ and in real time. Molecular interactions of gas-phase nonylphenols (NPs) with the surfaces of two common plastics, poly(styrene) and poly(ethylene terephthalate), were studied using quartz crystal microbalance and sum frequency generation vibrational spectroscopy. NP point sources were generated under two model environments: plastic on land and plastic on a freshwater surface. We found the headspace above calm water provides an excellent environment for NP deposition and demonstrate significant NP deposition on plastic within minutes at relevant concentrations. Further, NP deposits and orders differently on both plastics under humid versus dry environments. We attributed the unique deposition behaviors to surface energy changes from increased water content during the humid deposition. Lastly, nanograms of NP remained on microplastic surfaces hours after initial NP introduction and agitating conditions, illustrating feasibility for plastic-bound NPs to interact with biota and surrounding matter. Our model studies reveal important interactions between low-volatility environmental toxins and microplastics and hold potential to correlate the environmental fate of endocrine disrupting toxins in the Great Lakes with molecular behaviors. PMID:26752114

  13. Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating

    PubMed Central

    Slifka, A. J.; Filla, B. J.

    2003-01-01

    An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature.

  14. Batch fabrication of gold-gold nanogaps by E-beam lithography and electrochemical deposition

    NASA Astrophysics Data System (ADS)

    Wu, Yexian; Hong, Wenjing; Akiyama, Terunobu; Gautsch, Sebastian; Kolivoska, Viliam; Wandlowski, Thomas; de Rooij, Nico F.

    2013-06-01

    We report on the successful development of a well-controlled two-step batch nano-fabrication process to achieve nanometer-size gaps at the wafer scale. The technique is based on an optimized electron-beam lithography process, which enables the fabrication of nanogaps in the range (15 ± 4) nm. Following this first step, the feedback-controlled electrochemical deposition of gold from an aqueous HAuCl4-based electrolyte is applied to further reduce the size of the gap down to about 0.3-1.0 nm. This protocol was successfully demonstrated by fabricating more than 385 nanogaps on a 4 inch wafer. The reproducible fabrication of nanogaps in the range between 0.3 and 1.0 nm opens up new perspectives for addressing the electrical and reactivity properties of single molecules and clusters in confined space under well-controlled conditions.

  15. Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition

    SciTech Connect

    Wang, Yuhan Kittiwatanakul, Salinporn; Lu, Jiwei; Comes, Ryan B.; Wolf, Stuart A.

    2015-03-15

    Epitaxial NbO{sub 2} thin films were synthesized on Al{sub 2}O{sub 3} (0001) substrates via reactive bias target ion beam deposition. X-ray diffraction and Raman spectra were used to confirm the tetragonal phase of pure NbO{sub 2}. Through XPS, it was found that there was a ∼1.3 nm thick Nb{sub 2}O{sub 5} layer on the surface and the bulk of the thin film was NbO{sub 2}. The epitaxial relationship between the NbO{sub 2} film and the substrate was determined. Electrical transport measurement was measured up to 400 K, and the conduction mechanism was discussed.

  16. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic

    NASA Astrophysics Data System (ADS)

    Sharma, N.; van Mourik, R. A.; Yin, Y.; Koopmans, B.; Parkin, S. S. P.

    2016-04-01

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle.

  17. Measurement and analysis on ion barrier film of MCP by ion beam sputtering deposition

    NASA Astrophysics Data System (ADS)

    Zhang, Ni; Zhu, Yu-Feng; Li, Dan; Nie, Jing; Zhang, Fan; Zhang, Tai-min; Liu, Xiao-jian; Liu, Zhao-lu; Cheng, Wei; Chen, Chang

    2015-03-01

    Ion barrier film (IBF) on the input side surface of Micro-channel Plate (MCP ) has a dual role in the high electron transmittance and high ionic blocking rate, and the quality of the film is very strict, so to choose a good coating way to meet the application of IBF-MCP in the third image intensifier is very important. Ion beam sputtering deposition (IBSD) technology is a relatively mature coating technology which can obtain a dense strong adhesion and smooth, high-quality film. This paper is carried out from the quality analysis on surface morphology, crystal structure and coating quality and comparison with qualified film to determine a better way to prepare IBF on the input side surface of MCP.

  18. Focused-electron-beam-induced-deposited cobalt nanopillars for nanomagnetic logic.

    PubMed

    Sharma, N; van Mourik, R A; Yin, Y; Koopmans, B; Parkin, S S P

    2016-04-22

    Nanomagnetic logic (NML) intends to alleviate problems of continued miniaturization of CMOS-based electronics, such as energy dissipation through heat, through advantages such as low power operation and non-volatile magnetic elements. In line with recent breakthroughs in NML with perpendicularly magnetized elements formed from thin films, we have fabricated NML inverter chains from Co nanopillars by focused electron beam induced deposition (FEBID) that exhibit shape-induced perpendicular magnetization. The flexibility of FEBID allows optimization of NML structures. Simulations reveal that the choice of nanopillar dimensions is critical to obtain the correct antiferromagnetically coupled configuration. Experiments carrying the array through a clocking cycle using the Oersted field from an integrated Cu wire show that the array responds to the clocking cycle. PMID:26941232

  19. Properties of depth-profile controlled boron nitride films prepared by ion-beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Kumagai, M.; Suzuki, M.; Suzuki, T.; Tanaka, Y.; Setsuhara, Y.; Miyake, S.; Ogata, K.; Kohata, M.; Higeta, K.; Einishi, T.; Suzuki, Y.; Shimoitani, Y.; Motonami, Y.

    1997-05-01

    Boron nitride films were prepared by vapor deposition of boron and simultaneous bombardment with mixed gas ions of nitrogen and argon in the energy range of 0.2 to 20 keV. The films were prepared on various kinds of substrates including silicon wafers, tungsten carbide plates and various ceramic plates at a temperature of 400°C. In the synthesis of the BN films, a boron-rich buffer layer between the substrate and the BN film was formed by energetic nitrogen ion beam bombardment, improving tribological properties such as the depth-profile controlled layer. The buffer layer improved film adhesion, and chemical stability, thermal stability at elevated temperature and corrosion resistance of the BN films also gave good results.

  20. Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

    SciTech Connect

    Kaur, Maninder; Qiang, You; Jiang, Weilin; Burks, Edward C.; Liu, Kai; Namavar, Fereydoon; McCloy, John S.

    2014-11-07

    Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

  1. Energy deposition in TEVATRON magnets from beam losses in interaction regions

    SciTech Connect

    Ginneken, A.V.

    1988-10-01

    In addition to interacting in the detector, particles produced at an interaction region also deposit energy, with less desirable consequences, in magnets and other components of the accelerator. This note briefly assesses the damage potential of these (essentially unavoidable) beam losses from the viewpoint of quenching of superconducting magnets in an upgraded Tevatron, specifically for the 1 TeV p-/ovr string/p option with a luminosity of 10/sup 31/ cm/sup - 2/ sec/sup -1/, through the results carry more generality. Related issues such as radiation damage to detector electronics or other components are not addressed here. These are thought to be less problematic at the Tevatron, as in thus far supported by operational experience. 8 refs., 10 figs.

  2. Stopping supersonic beams with atomic and molecular coilguns

    NASA Astrophysics Data System (ADS)

    Narevicius, Edvardas

    2008-05-01

    We report a method that enables the stopping and trapping of any paramagnetic atom or molecule using a series of pulsed electromagnetic coils. Results of stopping metastable neon and molecular oxygen with a 64 stage coilgun will be presented and applications to fundamental problems in physics and chemistry discussed.

  3. Towards a single step process to create high purity gold structures by electron beam induced deposition at room temperature.

    PubMed

    Mansilla, C; Mehendale, S; Mulders, J J L; Trompenaars, P H F

    2016-10-14

    Highly pure metallic structures can be deposited by electron beam induced deposition and they have many important applications in different fields. The organo-metallic precursor is decomposed and deposited under the electron beam, and typically it is purified with post-irradiation in presence of O2. However, this approach limits the purification to the surface of the deposit. Therefore, 'in situ' purification during deposition using simultaneous flows of both O2 and precursor in parallel with two gas injector needles has been tested and verified. To simplify the practical arrangements, a special concentric nozzle has been designed allowing deposition and purification performed together in a single step. With this new device metallic structures with high purity can be obtained more easily, while there is no limit on the height of the structures within a practical time frame. In this work, we summarize the first results obtained for 'in situ' Au purification using this concentric nozzle, which is described in more detail, including flow simulations. The operational parameter space is explored in order to optimize the shape as well as the purity of the deposits, which are evaluated through scanning electron microscope and energy dispersive x-ray spectroscopy measurements, respectively. The observed variations are interpreted in relation to other variables, such as the deposition yield. The resistivity of purified lines is also measured, and the influence of additional post treatments as a last purification step is studied. PMID:27587078

  4. Physical properties of a-C:N films produced by ion beam assisted deposition

    SciTech Connect

    Rossi, F. ); Andre, B. ); van Veen, A.; Mijnarends, P.E.; Schut, H.; Labohm, F. ); Dunlop, H. ); Delplancke, M.P. ); Hubbard, K. )

    1994-09-01

    Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N[sup +][sub 2]/N[sup +] beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C:N films are mostly graphitic and have up to 20% [ital sp][sup 3] bonding. Nitrogen is mostly combined with carbon in nitrile (C[equivalent to]N) and imine (C=N) groups. RBS and NDP show that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C:N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.

  5. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy.

    PubMed

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L; Roy, Ajit K

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested. PMID:27108606

  6. A non-diaphragm type small shock tube for application to a molecular beam source

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Yuta; Osuka, Kenichi; Miyoshi, Nobuya; Kinefuchi, Ikuya; Takagi, Shu; Matsumoto, Yoichiro

    2013-07-01

    A non-diaphragm type small shock tube was developed for application to a molecular beam source, which can generate beams in the energy range from 1 to several electron volts and beams containing dissociated species such as atomic oxygen. Since repetitive high-frequency operation is indispensable for rapid signal acquisition in beam scattering experiments, the dimensions of the shock tube were miniaturized to reduce the evacuation time between shots. The designed shock tube is 2-4 mm in diameter and can operate at 0.5 Hz. Moreover, a high shock Mach number at the tube end is required for high-energy molecular beam generation. To reduce the shock attenuation caused by the wall boundary layer, which becomes significant in small-diameter tubes, we developed a high-speed response valve employing the current-loop mechanism. The response time of this mechanism is about 100 μs, which is shorter than the rupture time of conventional diaphragms. We show that the current-loop valve generates shock waves with shorter formation distances (about 200-300 mm) than those of conventional shock tubes. In addition, the converging geometry efficiently accelerates shock wave in the small-diameter tubes. The optimal geometry of the shock tube yields shock Mach number around 7, which indicates that the translation energy of molecular beams can exceed 1 eV even in the presence of the real gas effect.

  7. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  8. Use of molecular beams to support microspheres during plasma coating

    SciTech Connect

    Crane, J.K.; Smith, R.D.; Johnson, W.L.; Letts, S.A.; Korbel, G.R.; Krenick, R.M.

    1980-08-26

    Spherical laser fusion targets can be levitated on beams of Ar or other gas atoms. This is an especially useful and reliable technique for supporting microspheres during plasma coating or plasma etching. The reliability of this technique is principally the result of two things: the success of a special centering device which provides a lateral, stabilizing force on the levitated microspheres; and a gas handling system which is capable of controlling levitation gas flow in the microtorr liter/sec range. We have determined that the operational regime of this device is that of Knudsen's flow. This knowledge of the flow characteristics has been important in developing this device.

  9. Molecular Beam Studies of Hot Atom Chemical Reactions: Reactive Scattering of Energetic Deuterium Atoms

    DOE R&D Accomplishments Database

    Continetti, R. E.; Balko, B. A.; Lee, Y. T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H{sub 2} -> DH + H and the substitution reaction D + C{sub 2}H{sub 2} -> C{sub 2}HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible.

  10. DESIGN OF A MOLECULAR BEAM SURFACE SCATTERING APPARATUS FOR VELOCITY AND ANGULAR DISTRIBUTION MEASUREMENTS

    SciTech Connect

    Ceyer, S. T.; Siekhaus, W. J.; Somorjai, G. A.

    1980-11-01

    A molecular beam surface scattering apparatus designed for the study of corrosion and catalyticsurfacereactions is described. The apparatus incorporates two molecular or atomic beams aimed at a surface characterized by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES), a rotatable, differentially pumped quadrupole mass spectrometer, and a versatile manipulator. Angular distributions and energy distributions as a funcion of angle and independent of the surface residence time can be measured. Typical data for the oxidation of deuterium to D{sub 2}O on a Pt(lll) crystal surface are presented.

  11. Molecular beam studies of hot atom chemical reactions: Reactive scattering of energetic deuterium atoms

    SciTech Connect

    Continetti, R.E.; Balko, B.A.; Lee, Y.T.

    1989-02-01

    A brief review of the application of the crossed molecular beams technique to the study of hot atom chemical reactions in the last twenty years is given. Specific emphasis is placed on recent advances in the use of photolytically produced energetic deuterium atoms in the study of the fundamental elementary reactions D + H/sub 2/ /minus/> DH + H and the substitution reaction D + C/sub 2/H/sub 2/ /minus/> C/sub 2/HD + H. Recent advances in uv laser and pulsed molecular beam techniques have made the detailed study of hydrogen atom reactions under single collision conditions possible. 18 refs., 9 figs.

  12. Simple Validation of Transient Plume Models Using Molecular Beam-Related Applications

    SciTech Connect

    Woronowicz, M. S.

    2008-12-31

    A simple effort using molecular beam data to compare the results of two different transient free molecule point source models was performed, motivated by a desire to determine the utility of such formulations for a variety of time-dependent applications. These models are evaluated against effusive molecular beam time-of-flight data, as well as behavior observed in pulsed laser ablation experiments and high-fidelity direct simulation Monte Carlo results. Such comparisons indicate that the physical behavior of these time-dependent expansions require taking a surface-enforced directional bias into account. This bias has been absent in a number of investigative formulations, both historical and current.

  13. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100).

    PubMed

    Schirmer, M; Walz, M-M; Vollnhals, F; Lukasczyk, T; Sandmann, A; Chen, C; Steinrück, H-P; Marbach, H

    2011-02-25

    We have investigated the lithographic generation of TiO(x) nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures. PMID:21242619

  14. Electron-beam-induced deposition and post-treatment processes to locally generate clean titanium oxide nanostructures on Si(100)

    NASA Astrophysics Data System (ADS)

    Schirmer, M.; Walz, M.-M.; Vollnhals, F.; Lukasczyk, T.; Sandmann, A.; Chen, C.; Steinrück, H.-P.; Marbach, H.

    2011-02-01

    We have investigated the lithographic generation of TiOx nanostructures on Si(100) via electron-beam-induced deposition (EBID) of titanium tetraisopropoxide (TTIP) in ultra-high vacuum (UHV) by scanning electron microscopy (SEM) and local Auger electron spectroscopy (AES). In addition, the fabricated nanostructures were also characterized ex situ via atomic force microscopy (AFM) under ambient conditions. In EBID, a highly focused electron beam is used to locally decompose precursor molecules and thereby to generate a deposit. A drawback of this nanofabrication technique is the unintended deposition of material in the vicinity of the impact position of the primary electron beam due to so-called proximity effects. Herein, we present a post-treatment procedure to deplete the unintended deposits by moderate sputtering after the deposition process. Moreover, we were able to observe the formation of pure titanium oxide nanocrystals (<100 nm) in situ upon heating the sample in a well-defined oxygen atmosphere. While the nanocrystal growth for the as-deposited structures also occurs in the surroundings of the irradiated area due to proximity effects, it is limited to the pre-defined regions, if the sample was sputtered before heating the sample under oxygen atmosphere. The described two-step post-treatment procedure after EBID presents a new pathway for the fabrication of clean localized nanostructures.

  15. Intramolecular and Intermolecular Interactions in Hybrid Organic-Inorganic Alucone Films Grown by Molecular Layer Deposition.

    PubMed

    Park, Yi-Seul; Kim, Hyein; Cho, Boram; Lee, Chaeyun; Choi, Sung-Eun; Sung, Myung Mo; Lee, Jin Seok

    2016-07-13

    Investigation of molecular interactions in polymeric films is crucial for understanding and engineering multiscale physical phenomena correlated to device function and performance, but this often involves a compromise between theoretical and experimental data, because of poor film uniformity. Here, we report the intramolecular and intermolecular interactions inside the ultrathin and conformal hybrid organic-inorganic alucone films grown by molecular layer deposition, based on sequential and self-limiting surface reactions. Varying the carbon chain length of organic precursors, which affects their molecular flexibility, caused intramolecular interactions such as double reactions by bending of the molecular backbone, resulting in formation of hole vacancies in the films. Furthermore, intermolecular interactions in alucone polymeric films are dependent on the thermal kinetics of molecules, leading to binding failures and cross-linking at low and high growth temperatures, respectively. We illustrate these key interactions and identify molecular geometries and potential energies by density functional theory calculations. PMID:27314844

  16. Combining focused ion beam and atomic layer deposition in nanostructure fabrication

    NASA Astrophysics Data System (ADS)

    Han, Zhongmei; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

    2014-03-01

    Combining the strengths of atomic layer deposition (ALD) with focused ion beam (FIB) milling provides new opportunities for making 3D nanostructures with flexible choice of materials. Such structures are of interest in prototyping microelectronic and MEMS devices which utilize ALD grown thin films. As-milled silicon structures suffer from segregation and roughening upon heating, however. ALD processes are typically performed at 200-500 °C, which makes thermal stability of the milled structures a critical issue. In this work Si substrates were milled with different gallium ion beam incident angles and then annealed at 250 °C. The amount of implanted gallium was found to rapidly decrease with increasing incident angle with respect of surface normal, which therefore improves the thermal stability of the milled features. 60° incident angle was found as the best compromise with respect to thermal stability and ease of milling. ALD Al2O3 growth at 250 °C on the gallium FIB milled silicon was possible in all cases, even when segregation was taking place. ALD Al2O3 could be used both for creating a chemically uniform surface and for controlled narrowing of FIB milled trenches.

  17. Closed-Loop Process Control for Electron Beam Freeform Fabrication and Deposition Processes

    NASA Technical Reports Server (NTRS)

    Taminger, Karen M. (Inventor); Hafley, Robert A. (Inventor); Martin, Richard E. (Inventor); Hofmeister, William H. (Inventor)

    2013-01-01

    A closed-loop control method for an electron beam freeform fabrication (EBF(sup 3)) process includes detecting a feature of interest during the process using a sensor(s), continuously evaluating the feature of interest to determine, in real time, a change occurring therein, and automatically modifying control parameters to control the EBF(sup 3) process. An apparatus provides closed-loop control method of the process, and includes an electron gun for generating an electron beam, a wire feeder for feeding a wire toward a substrate, wherein the wire is melted and progressively deposited in layers onto the substrate, a sensor(s), and a host machine. The sensor(s) measure the feature of interest during the process, and the host machine continuously evaluates the feature of interest to determine, in real time, a change occurring therein. The host machine automatically modifies control parameters to the EBF(sup 3) apparatus to control the EBF(sup 3) process in a closed-loop manner.

  18. Biocompatibility and charge injection property of iridium film formed by ion beam assisted deposition.

    PubMed

    Lee, In-Seop; Whang, Chung-Nam; Park, Jong-Chul; Lee, Dong-Hee; Seo, Won-Sun

    2003-06-01

    Iridium thin film formed by electron-beam evaporation with simultaneous bombardment of Ar ion beam was evaluated for a stimulating neural electrode. The electrochemical behavior of as-deposited Ir film on Ni-Ti sample was almost identical to bulk Ir by producing much higher open-circuit corrosion potential and much lower anodic current density than the uncoated Ni-Ti in both 1N sulfuric acid and saline solution. The charge injection capability of Ir film was compared with that of Pt electrode currently used mostly as a stimulating neural electrode. The charge density of Pt was small and unchanged with increasing number of activating cycles in 0.1M H(2)SO(4), whilst the Ir film continuously produced increases in charge density. The charge injection density of Ir film in physiological solution was higher for the more activated sample under the identical stimulating condition. Attachment and proliferation with PC12 cells on Ir-coated CP Ti without applying electrical stimulation was similar to the polished CP Ti. A network of neurons and extending axons were formed on Ir film. PMID:12699658

  19. Measurement of energy deposited by charged-particle beams in composite targets

    SciTech Connect

    Farley, E.; Becker, J.; Crase, K.; Howe, R.; Selway, D.

    1980-07-02

    We have measured the energy deposited in two types of composite targets by a number of charged-particle beams: targets made of /sup 238/U, Lucite, and polyethylene were exposed to 0.26-GeV protons and 0.33-GeV deuterons, and aluminum-Lucite composites were exposed to 0.5-GeV electrons. In addition, we measured neutrons and gamma rays emitted from solid targets of various materials (including /sup 238/U and iron) exposed to 0.26-GeV protons and 0.33-GeV deuterons. We used passive detectors (thermoluminescence dosimeters, Lexan fission track recorders, and photographic emulsions) to measure the nonfission dose and the fission-fragment dose from the primary beam and its shower of products. Measurements were made at various depths and radial positions in the targets. Plots and numerical values of the measured doses are presented. The emission of neutrons and gamma rays was measured with a liquid-deuterated-benzene detector. In general, the dose profile with depth is similar for 0.26-GeV protons and 0.33-GeV deuterons. The ratio of return neutrons to gamma rays increases with increasing target mass number. Deuterons, however, produce from 1.7 to 5.8 times as many neutrons and gamma rays per particle as do protons.

  20. Dual-ion-beam deposition of carbon films with diamond-like properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  1. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  2. TOPICAL REVIEW: Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Song, Minghui; Furuya, Kazuo

    2008-04-01

    The fabrication, characterization, and decoration with metallic nanoparticles of nanostructures such as nanowhiskers, nanodendrites, and fractal-like nanotrees on insulator substrates by electron-beam-induced deposition (EBID) are reviewed. Nanostructures with different morphologies of whiskers, dendrites, or trees are fabricated on insulator (Al2O3 or SiO2) substrates by EBID in transmission electron microscopes by controlling the irradiation conditions such as the electron beam intensity. The growth of the nanostructure is related to the accumulation of charges on the surface of a substrate during electron-beam irradiation. A high concentration of the target metallic element and nanocrystal grains of the element are contained in the fabricated nanostructures. The process of growth of the nanostructures is explained qualitatively on the basis of mechanisms in which the formation of the nanostructures is considered to be related to the nanoscaled unevenness of the charge distribution on the surface of the substrate, the movement of the charges to the convex surface of the substrate, and the accumulation of charges at the tip of the grown nanostructure. Novel composite structures of Pt nanoparticle/tungsten (W) nanodendrite or Au nanoparticle/W nanodendrite are fabricated by the decoration of W nanodendrites with metallic elements. Because they have superior features, such as a large specific surface area, a freestanding structure on substrates, a typical size of several nanometers of the tip or the branch, and high purity, the nanostructures may have applications in technologies such as catalysts, sensors, and electron emitters. However, there are still some subjects that should be further studied before their application.

  3. Three-dimensional core–shell ferromagnetic nanowires grown by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core–shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (<100 nm in diameter) with metallic ferromagnetic cores of Co- and Fe-FEBID have been grown and coated with a protective Pt-FEBID shell (ranging 10–20 nm in thickness) aimed to minimize the degradation of magnetic properties caused by the surface oxidation of the core to a non-ferromagnetic material. The structure, chemistry and magnetism of nanowire cores of Co and Fe have been characterized in Pt-coated and uncoated nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  4. Intrinsic Magnetic Properties of fct FePt Nanocubes and Rods by Cluster Beam Deposition

    NASA Astrophysics Data System (ADS)

    Akdogan, Ozan; Li, Wanfeng; Hadjipanayis, George; Skomski, Ralph; Sellmyer, David

    2012-02-01

    In this work, single crystal fct FePt nanocubes have been successfully produced by a cluster beam deposition technique without the need of post annealing. Particles have been deposited by DC magnetron sputtering using high Ar pressures (0.5 to 2 Torr) on both single crystal Si substrates and Au grids for the measurement of magnetic and structural properties, respectively. The nanocubes have a uniform size distribution with an average size of 6.5 nm. At 1 Torr, the particles have the fct structure with an order parameter of 0.5 and a RT coercivity of 2 kOe with high switching fields seen in the hysteresis loop. Particle size was controlled by changing the pressure and power and also by ex-situ annealing. In addition to these nanocubes, micron size rods (which consist of 20 nm nanoparticles) with the fct structure have been observed near the cluster gun. These particles show a room temperature coercivity of 8 kOe with an order parameter of 0.85. Intrinsic magnetic properties (Curie temperature, HA, MS and magnetic viscosity) of the nanocubes and the nanoparticles (separated from the rods) have been extensively studied and the results will be reported.

  5. Structural and magnetic studies of thin Fe57 films formed by ion beam assisted deposition

    NASA Astrophysics Data System (ADS)

    Lyadov, N. M.; Bazarov, V. V.; Vagizov, F. G.; Vakhitov, I. R.; Dulov, E. N.; Kashapov, R. N.; Noskov, A. I.; Khaibullin, R. I.; Shustov, V. A.; Faizrakhmanov, I. A.

    2016-08-01

    Thin Fe57 films with the thickness of 120 nm have been prepared on glass substrates by using the ion-beam-assisted deposition technique. X-ray diffraction, electron microdiffraction and Mössbauer spectroscopy studies have shown that as-deposited films are in a stressful nanostructured state containing the nanoscaled inclusions of α-phase iron with the size of ∼10 nm. Room temperature in-plane and out-of-plane magnetization measurements confirmed the presence of the magnetic α-phase in the iron film and indicated the strong effect of residual stresses on magnetic properties of the film as well. Subsequent thermal annealing of iron films in vacuum at the temperature of 450 °C stimulates the growth of α-phase Fe crystallites with the size of up to 20 nm. However, electron microdiffraction and Mössbauer spectroscopic data have shown the partial oxidation and carbonization of the iron film during annealing. The stress disappeared after annealing of the film. The magnetic behaviour of the annealed samples was characterized by the magnetic hysteresis loop with the coercive field of ∼10 mT and the saturation magnetization decreased slightly in comparison with the α-phase Fe magnetization due to small oxidation of the film.

  6. Post-growth purification of Co nanostructures prepared by focused electron beam induced deposition

    NASA Astrophysics Data System (ADS)

    Begun, E.; Dobrovolskiy, O. V.; Kompaniiets, M.; Sachser, R.; Gspan, Ch; Plank, H.; Huth, M.

    2015-02-01

    In the majority of cases nanostructures prepared by focused electron beam induced deposition (FEBID) employing an organometallic precursor contain predominantly carbon-based ligand dissociation products. This is unfortunate with regard to using this high-resolution direct-write approach for the preparation of nanostructures for various fields, such as mesoscopic physics, micromagnetism, electronic correlations, spin-dependent transport and numerous applications. Here we present an in situ cleaning approach to obtain pure Co-FEBID nanostructures. The purification procedure lies in the exposure of heated samples to a H2 atmosphere in conjunction with the irradiation by low-energy electrons. The key finding is that the combination of annealing at 300 °C, H2 exposure and electron irradiation leads to compact, carbon- and oxygen free Co layers down to a thickness of about 20 nm starting from as-deposited Co-FEBID structures. In addition to this, in temperature-dependent electrical resistance measurements on post-processed samples we find a typical metallic behavior. In low-temperature magnetoresistance and Hall effect measurements we observe ferromagnetic behavior.

  7. Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

    NASA Astrophysics Data System (ADS)

    Uedono, Akira; Malinverni, Marco; Martin, Denis; Okumura, Hironori; Ishibashi, Shoji; Grandjean, Nicolas

    2016-06-01

    Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5-0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 1019 cm-3, vacancy-type defects were introduced starting at above [Mg] = 1 × 1020 cm-3. The major defect species was identified as a complex between Ga vacancy (VGa) and multiple nitrogen vacancies (VNs). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

  8. Fluoropolymer Films Deposited by Argon Ion-Beam Sputtering of Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Banks, Bruce A.; Kliss, Mark (Technical Monitor)

    1998-01-01

    The FT-IR, XPS and UV spectra of fluoropolymer films (SPTFE-I) deposited by argon ion-beam sputtering of polytetrafluoroethylene (PTFE) were obtained and compared with prior corresponding spectra of fluoropolymer films (SPTFE-P) deposited by argon rf plasma sputtering of PTFE. Although the F/C ratios for SPTFE-I and -P (1.63 and 1.51) were similar, their structures were quite different in that there was a much higher concentration of CF2 groups in SPTFE-I than in SPTFE-P, ca. 61 and 33% of the total carbon contents, respectively. The FT-IR spectra reflect that difference, that for SPTFE-I showing a distinct doublet at 1210 and 1150 per centimeter while that for SPTFE-P presents a broad, featureless band at ca. 1250 per centimeter. The absorbance of the 1210-per centimeter band in SPTFE-I was proportional to the thickness of the film, in the range of 50-400 nanometers. The SPTFE-I was more transparent in the UV than SPTFE-P at comparable thickness. The mechanism for SPTFE-I formation likely involves "chopping off" of oligomeric segments of PTFE as an accompaniment to "plasma" polymerization of TFE monomer or other fluorocarbon fragments generated in situ from PTFE on impact with energetic Ar ions. Data are presented for SPTFE-I deposits and the associated Ar(+) bombarded PTFE targets where a fresh target was used for each run or a single target was used for a sequence of runs.

  9. Chemical composition, morphology and optical properties of zinc sulfide coatings deposited by low-energy electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Ragachev, A. V.; Yarmolenko, M. A.; Rogachev, A. A.; Gorbachev, D. L.; Zhou, Bing

    2014-06-01

    The research determines the features of formation, morphology, chemical composition and optical properties of the coatings deposited by the method, proposed for the first time, of the exposure of mechanical mixture of zinc and sulfur powders to low-energy electron beam evaporation. The findings show that the deposited coatings are characterized by high chemical and structural homogeneity in thickness. The study considers the influence of substrate temperature and thickness of the deposited layer on the morphology and the width of the formed ZnS thin layers band gap. Also was shown the possibility to form ZnS coatings with this method using the mixture of zinc and copper sulfide powders.

  10. Investigations of low-temperature epitaxy, ion damage, and reactive-ion cleaning utilizing ion beam deposition

    SciTech Connect

    Appleton, B.R.; Zuhr, R.A.; Noggle, T.S.; Herbots, N.; Pennycook, S.J.

    1986-01-01

    The technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of /sup 74/Ge on Ge(100), /sup 30/Si on Si(100), and /sup 74/Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

  11. Expansion Discharge Source for Ion Beam Laser Spectroscopy of Cold Molecular Ions

    NASA Astrophysics Data System (ADS)

    Porambo, Michael; Pearson, Jessica; Riccardo, Craig; McCall, Benjamin J.

    2013-06-01

    Molecular ions are important in several fields of research, and spectroscopy acts as a key tool in the study of these ions. However, problems such as low ion abundance, ion-neutral confusion, and spectral congestion due to high internal temperatures can hinder effective spectroscopic studies. To circumvent these problems, we are developing a technique called Sensitive, Cooled, Resolved, Ion BEam Spectroscopy (SCRIBES). This ion beam spectrometer will feature a continuous supersonic expansion discharge source to produce cold molecular ions, electrostatic ion optics to focus the ions into an ion beam and bend the beam away from co-produced neutral molecules, an overlap region for cavity enhanced spectroscopy, and a time-of-flight mass spectrometer. When completed, SCRIBES will be an effective tool for the study of large, fluxional, and complex molecular ions that are difficult to study with other means. The ion beam spectrometer has been successfully implemented with a hot ion source. This talk will focus on the work of integrating a supersonic expansion discharge source into the instrument. To better understand how the source would work in the whole ion beam instrument, characterization studies are being performed with spectroscopy of HN_2^+ in a section of the system to ascertain the rotational temperature of the ion expansion. Attempts are also underway to measure the ion current from a beam formed from the expansion. Once the source in this environment is properly understood, we will reintegrate it to the rest of the ion beam system, completing SCRIBES. A. A. Mills, B. M. Siller, M. W. Porambo, M. Perera, H. Kreckel and B. J. McCall J. Chem. Phys., 135, 224201, (2011). K. N. Crabtree, C. A. Kauffman and B. J. McCall Rev. Sci. Instrum. 81, 086103, (2010).

  12. Computational study of transport and energy deposition of intense laser-accelerated proton beams in solid density matter

    NASA Astrophysics Data System (ADS)

    Kim, J.; McGuffey, C.; Qiao, B.; Beg, F. N.; Wei, M. S.; Grabowski, P. E.

    2015-11-01

    With intense proton beams accelerated by high power short pulse lasers, solid targets are isochorically heated to become partially-ionized warm or hot dense matter. In this regime, the thermodynamic state of the matter significantly changes, varying the proton stopping power where both bound and free electrons contribute. Additionally, collective beam-matter interaction becomes important to the beam transport. We present self-consistent hybrid particle-in-cell (PIC) simulation results of proton beam transport and energy deposition in solid-density matter, where the individual proton stopping and the collective effects are taken into account simultaneously with updates of stopping power in the varying target conditions and kinetic motions of the beam in the driven fields. Broadening of propagation range and self-focusing of the beam led to unexpected target heating by the intense proton beams, with dependence on the beam profiles and target conditions. The behavior is specifically studied for the case of an experimentally measured proton beam from the 1.25 kJ, 10 ps OMEGA EP laser transporting through metal foils. This work was supported by the U.S. DOE under Contracts No. DE-NA0002034 and No. DE-AC52-07NA27344 and by the U.S. AFOSR under Contract FA9550-14-1-0346.

  13. An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

    PubMed

    Mach, Jindrich; Samoril, Tomás; Voborný, Stanislav; Kolíbal, Miroslav; Zlámal, Jakub; Spousta, Jirí; Dittrichová, Libuse; Sikola, Tomás

    2011-08-01

    The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions. PMID:21895238

  14. Organic and inorganic-organic thin film structures by molecular layer deposition: A review.

    PubMed

    Sundberg, Pia; Karppinen, Maarit

    2014-01-01

    The possibility to deposit purely organic and hybrid inorganic-organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic-organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  15. Organic and inorganic–organic thin film structures by molecular layer deposition: A review

    PubMed Central

    Sundberg, Pia

    2014-01-01

    Summary The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications. PMID:25161845

  16. Epitaxial growth of SrTiO{sub 3} thin film on Si by laser molecular beam epitaxy

    SciTech Connect

    Zhou, X. Y.; Miao, J.; Dai, J. Y.; Chan, H. L. W.; Choy, C. L.; Wang, Y.; Li, Q.

    2007-01-01

    SrTiO{sub 3} thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO{sub 3} was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO{sub 3}/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO{sub 3} and the interfacial structure. Electrical measurements revealed that the SrTiO{sub 3} film was highly resistive.

  17. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey. J.; Wang, George T.

    2015-10-01

    Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1 1 bar 02) r-plane sapphire substrates. Dislocation free [ 11 2 bar 0 ] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar { 10 1 bar 0 } side facets, which appear due to a decrease in relative growth rate of the { 10 1 bar 0 } facets to the { 10 1 bar 1 } and { 10 1 bar 1 } facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  18. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    DOE PAGESBeta

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-04-27

    Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  19. Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

    SciTech Connect

    Chan, J.; Fu, T.; Cheung, N.W.; Ross, J.; Newman, N.; Rubin, M.

    1993-04-01

    Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 C, while the crystallinity of AlN/(0001) A1{sub 2}O{sub 3} samples improved from 700 to 850 C. The optical absorption characteristics of the AlN/(0001) A1{sub 2}O{sub 3} films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

  20. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    NASA Astrophysics Data System (ADS)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Transport measurements of exfoliated graphene after SrO deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  1. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    NASA Technical Reports Server (NTRS)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  2. Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

    NASA Astrophysics Data System (ADS)

    Lutsev, L. V.; Korovin, A. M.; Bursian, V. E.; Gastev, S. V.; Fedorov, V. V.; Suturin, S. M.; Sokolov, N. S.

    2016-05-01

    Synthesis of nanosized yttrium iron garnet (Y3Fe5O12, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10-5. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

  3. High Active Nitrogen Flux Growth of (Indium) Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    McSkimming, Brian Matthew

    Plasma-assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) has evolved over the past two decades due to progress in growth science and in the active nitrogen plasma source hardware. The transition from electron cyclotron resonance (ECR) microwave plasma sources to radio frequency (RF) plasma sources has enabled higher growth rates, reduced ion damage and improved operation at higher growth chamber pressures. Even with further improvements in RF plasma sources, PAMBE has remained primarily a research tool partially due to limitations in material growth rates. This dissertation presents results based upon two modifications of a commercially available nitrogen plasma source. These modifications have resulted in record active nitrogen fluxes, and therefore record growth rates of more than 7.6 mum/h. For optimized growth conditions in the standard metal-rich growth regime, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 mumx3 mum) on the order of 1 nm. Secondary ion mass spectroscopy (SIMS) impurity analysis demonstrates unintentional oxygen incorporation of ˜1x1016, comparable to the metal organic chemical vapor deposition (MOCVD) grown template layer. Additionally, a revised universal growth diagram is proposed allowing the rapid determination of the metal flux needed to grow in a specific growth regime for any and all active nitrogen fluxes available. High temperature nitrogen rich PAMBE growth of GaN has been previously demonstrated as a viable alternative to the challenges presented in maintaining the Ga bilayer required by metal rich growth of GaN. This dissertation also present results demonstrating PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ˜100 °C greater than any previously reported PAMBE growth of GaN. Finally, a revised growth diagram is proposed highlighting a large growth window available at high temperatures.

  4. Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH 3-seeded supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    McGinnis, A. J.; Thomson, D.; Davis, R. F.; Chen, E.; Michel, A.; Lamb, H. H.

    2001-11-01

    The kinetics of homoepitaxial growth of GaN thin films on metal-organic chemical vapor deposition (MOCVD)-grown GaN(0 0 0 1)/AlN/6H-SiC substrates was probed using NH 3-seeded supersonic molecular beams. NH 3 was seeded in H 2 and He and antiseeded in N 2 and Ar in order to obtain incident kinetic energies of 0.08-1.8 eV. Nozzle temperatures of 35-600 °C were used to adjust the NH 3 internal energy. Intense NH 3 beams (fluxes >2×10 15 cm-2 s-1 at the substrate) are produced for low seeding percentages (<5%) in the lighter carrier gases, because the heavier species (NH 3) is focused along the centerline of the beam. The NH 3 flux is proportional to the ratio of its molecular weight to the average molecular weight of the binary gas mixture. A steady-state Langmuir-Hinshelwood kinetics model was used to extract zero-coverage NH 3 sticking coefficient ( αNH 30) values from GaN growth kinetics data. An αNH 30 value of 0.14 at 750 °C was determined using seeded supersonic beams of NH 3 in He with incident kinetic energies of 0.4-0.5 eV. In comparison, GaN growth rates using low-energy NH 3 molecules (0.03 eV) from a leak valve indicate an αNH 30 of 0.29. Growth rate measurements using NH 3 beams with kinetic energies of 0.08-1.8 eV confirmed that αNH 30 generally decreases with increasing incident kinetic energy, leading us to conclude that NH 3 chemisorption on GaN(0 0 0 1) is unactivated and occurs via a precursor-mediated mechanism. Internal energy enhancement of NH 3 chemisorption via a precursor-mediated channel is proposed to explain the effects of nozzle temperature on GaN growth kinetics. The effects of NH 3 incident kinetic energy on film morphology are indirect. Rough, highly faceted films are observed under Ga-limited growth conditions. The surface morphology of films grown under NH 3-limited conditions changes from rough to smooth as the effective V/III ratio is decreased.

  5. Collision dynamics of methyl radicals and highly vibrationally excited molecules using crossed molecular beams

    SciTech Connect

    Chu, P.M.Y.

    1991-10-01

    The vibrational to translational (V{yields}T) energy transfer in collisions between large highly vibrationally excited polyatomics and rare gases was investigated by time-of-flight techniques. Two different methods, UV excitation followed by intemal conversion and infrared multiphoton excitation (IRMPE), were used to form vibrationally excited molecular beams of hexafluorobenzene and sulfur hexafluoride, respectively. The product translational energy was found to be independent of the vibrational excitation. These results indicate that the probability distribution function for V{yields}T energy transfer is peaked at zero. The collisional relaxation of large polyatomic molecules with rare gases most likely occurs through a rotationally mediated process. Photodissociation of nitrobenzene in a molecular beam was studied at 266 nm. Two primary dissociation channels were identified including simple bond rupture to produce nitrogen dioxide and phenyl radical and isomerization to form nitric oxide and phenoxy radical. The time-of-flight spectra indicate that simple bond rupture and isomerization occurs via two different mechanisms. Secondary dissociation of the phenoxy radicals to carbon monoxide and cyclopentadienyl radicals was observed as well as secondary photodissociation of phenyl radical to give H atom and benzyne. A supersonic methyl radical beam source is developed. The beam source configuration and conditions were optimized for CH{sub 3} production from the thermal decomposition of azomethane. Elastic scattering of methyl radical and neon was used to differentiate between the methyl radicals and the residual azomethane in the molecular beam.

  6. Fabrication of speckle patterns by focused ion beam deposition and its application to micro-scale residual stress measurement

    NASA Astrophysics Data System (ADS)

    Zhu, Ronghua; Xie, Huimin; Xue, Yunfei; Wang, Liang; Li, YanJie

    2015-09-01

    This paper deals with the characterization of influence parameters on the fabrication of speckle patterns using FIB deposition. In many manufacturing processes the presence of residual stress is disturbing, and can significantly affect the mechanical properties of materials and structures. Digital image correlation (DIC) is validated to be an effective approach for the determination of micro-scale residual stress under the dual-beam microscope (FIB-EB). Considering the high-quality micro-scale speckle pattern is the prerequisite in DIC measurement, the influence parameters on the deposited speckle patterns, such as the quality of the speckle template, total deposition time, ion beam current density, and dwell time, are primarily discussed. Moreover, in the measurement of residual stress, the integrated fabrication technique under the FIB-EB dual-beam system is also explained, covering the following steps: fabrication of the speckle pattern by FIB deposition, slot milling for stress release by FIB, high-resolution SEM imaging before and after stress release as well as the deformation analysis by DIC. As application, the optimized micro-scale speckle patterns are deposited on the surface of laser shock peened metallic glass, and the residual stress distribution on the sample surface is successfully measured.

  7. Using Pyrolysis Molecular Beam Mass Spectrometry to Characterize Soil Organic Carbon in Native Prairie Soils

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The objective of this study was to characterize soil organic carbon (SOC) with pyrolysis molecular beam mass spectrometry (py-MBMS) and then to determine correlations between the mass spectra and associated soil characterization data. Both soil carbon chemistry and the organic forms in which SOC is...

  8. Crossed Molecular Beam Studies and Dynamics of Decomposition of Chemically Activated Radicals

    DOE R&D Accomplishments Database

    Lee, Y. T.

    1973-09-01

    The power of the crossed molecular beams method in the investigation of the dynamics of chemical reactions lies mainly in the direct observation of the consequences of single collisions of well controlled reactant molecules. The primary experimental observations which provide information on reaction dynamics are the measurements of angular and velocity distributions of reaction products.

  9. History of Molecular Beam Research: Personal Reminiscences of the Important Evolutionary Period 1919-1933

    ERIC Educational Resources Information Center

    Estermann, Immanuel

    1975-01-01

    Describes the early historical period of the molecular beam method, including the Stern-Gerlach experiment, the work of Davisson and Germer, and the magnetic moment determinations for the proton, neutron, and deuteron. Contains some amusing historical sidelights on the research personalities that dominated that period. (MLH)

  10. Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

    SciTech Connect

    Novak, V.; Olejnik, K.; Cukr, M.; Smrcka, L.; Remes, Z.; Oswald, J.

    2007-10-15

    Our band gap spectroscopy measurements reveal a remarkably big increase of the substrate temperature during the low-temperature molecular beam epitaxy growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilayer. We discuss possibilities for reducing the substrate temperature variations during the growth.

  11. Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

    NASA Astrophysics Data System (ADS)

    Kim, Chang Su; Jo, Sung Jin; Jeong, Soon Moon; Kim, Woo Jin; Baik, Hong Koo; Lee, Se Jong; Song, Kie Moon

    2005-03-01

    Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55° to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2θ-scan and phgr-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.

  12. In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

    SciTech Connect

    Dong, H.; KC, Santosh; Azcatl, A.; Cabrera, W.; Qin, X.; Brennan, B.; Cho, K.; Wallace, R. M.; Zhernokletov, D.

    2013-11-28

    The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.

  13. Reduced electrical impedance of SiO{sub 2}, deposited through focused ion beam based systems, due to impurity percolation

    SciTech Connect

    Faraby, H.; DiBattista, M.; Bandaru, P. R.

    2014-11-28

    The electrical impedance (both the resistive and capacitive aspects) of focused ion beam (FIB) deposited SiO{sub 2} has been correlated to the specific composition of the ion beam, in Ga- and Xe-based FIB systems. The presence of electrically percolating Ga in concert with carbon (inevitably found as the product of the hydrocarbon precursor decomposition) has been isolated as a major cause for the observed decrease in the resistivity of the deposited SiO{sub 2}. Concomitant with the decreased resistivity, an increased capacitance and effective dielectric constant was observed. Our study would be useful to understand the constraints to the deposition of high quality insulator films through FIB based methodologies.

  14. Ultra high resolution molecular beam cars spectroscopy with application to planetary atmospheric molecules

    NASA Technical Reports Server (NTRS)

    Byer, R. L.

    1982-01-01

    The measurement of high resolution pulsed and continuous wave (CW) coherent anti-Stokes Raman spectroscopy (CARS) measurements in pulsed and steady state supersonic expansions were demonstrated. Pulsed molecular beam sources were characterized, and saturation of a Raman transition and, for the first time, the Raman spectrum of a complex molecular cluster were observed. The observation of CW CARS spectra in a molecular expansion and the effects of transit time broadening is described. Supersonic expansion is established as a viable technique for high resolution Raman spectroscopy of cold molecules with resolutions of 100 MH2.

  15. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, T.M.; Hammons, B.E.; Tsao, J.Y.

    1992-12-15

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth. 3 figs.

  16. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    DOEpatents

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  17. Ultra-sensitive high-precision spectroscopy of a fast molecular ion beam

    SciTech Connect

    Mills, Andrew A.; Siller, Brian M.; Porambo, Michael W.; Perera, Manori; Kreckel, Holger; McCall, Benjamin J.

    2011-12-14

    Direct spectroscopy of a fast molecular ion beam offers many advantages over competing techniques, including the generality of the approach to any molecular ion, the complete elimination of spectral confusion due to neutral molecules, and the mass identification of individual spectral lines. The major challenge is the intrinsic weakness of absorption or dispersion signals resulting from the relatively low number density of ions in the beam. Direct spectroscopy of an ion beam was pioneered by Saykally and co-workers in the late 1980s, but has not been attempted since that time. Here, we present the design and construction of an ion beam spectrometer with several improvements over the Saykally design. The ion beam and its characterization have been improved by adopting recent advances in electrostatic optics, along with a time-of-flight mass spectrometer that can be used simultaneously with optical spectroscopy. As a proof of concept, a noise-immune cavity-enhanced optical heterodyne molecular spectroscopy (NICE-OHMS) setup with a noise equivalent absorption of {approx}2 x 10{sup -11} cm{sup -1} Hz{sup -1/2} has been used to observe several transitions of the Meinel 1-0 band of N{sub 2}{sup +} with linewidths of {approx}120 MHz. An optical frequency comb has been used for absolute frequency calibration of transition frequencies to within {approx}8 MHz. This work represents the first direct spectroscopy of an electronic transition in an ion beam, and also represents a major step toward the development of routine infrared spectroscopy of rotationally cooled molecular ions.

  18. Tunable diode lasers and their application in cold molecular beam spectroscopy

    NASA Astrophysics Data System (ADS)

    Sharpe, Steven W.; Xu, Songlin; McDowell, Robin; Blake, Thomas A.

    1996-10-01

    Supersonic molecular expansions provide a unique environment in which to acquire the infrared spectra of many molecular systems. Tunable diode lasers offer high spectral brightness, low noise, rapid tuning, and contiguous spectral coverage in the infrared, from 3000 to 500 cm-1. Molecular beams combined with tunable diode lasers represents a powerful tool for reducing or removing spectral congestion arising from both pressure broadening and rotational excitation. Depending on expansion conditions, rotational temperatures on the order of 10K can be routinely obtained. With the appropriate pulsed slit nozzle, Doppler broadening is reduced six-fold or more over that of room temperature, static cells. In addition, by employing modified White cell optics, effective optical path lengths of 3 meters can be realized. A description of Pacific Northwest National Laboratory's beam-diode laser spectrometer will be given along with recent results for studies involving the fully rotationally resolved spectra of several molecules of atmospheric interest including chlorine nitrate and carbon tetrachloride.

  19. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    NASA Astrophysics Data System (ADS)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core–shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  20. High-purity 3D nano-objects grown by focused-electron-beam induced deposition.

    PubMed

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ∼50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices. PMID:27454835

  1. Monte Carlo simulation of energy deposition by low-energy electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Furman, D. R.; Green, A. E. S.

    1975-01-01

    A set of detailed atomic cross sections has been used to obtain the spatial deposition of energy by 1-20-eV electrons in molecular hydrogen by a Monte Carlo simulation of the actual trajectories. The energy deposition curve (energy per distance traversed) is quite peaked in the forward direction about the entry point for electrons with energies above the threshold of the electronic states, but the peak decreases and broadens noticeably as the electron energy decreases below 10 eV (threshold for the lowest excitable electronic state of H2). The curve also assumes a very symmetrical shape for energies below 10 eV, indicating the increasing importance of elastic collisions in determining the shape of the curve, although not the mode of energy deposition.

  2. Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, YongJin; Sadofev, Sergey; Fernández-Garrido, Sergio; Calarco, Raffaella; Riechert, Henning; Galazka, Zbigniew; Uecker, Reinhard; Brandt, Oliver

    2016-04-01

    We study the growth of InN films on In2O3(111) substrates by plasma-assisted molecular beam epitaxy under N excess. InN films deposited directly on In2O3(111) exhibit a strongly faceted morphology. A nitridation step prior to growth is found to convert the In2O3(111) surface to InN{0001}. The morphology of InN films deposited on such nitridated In2O3(111) substrates is characteristic for growth by instable step-flow and is thus drastically different from the three-dimensional growth obtained without nitridation. We show that this change originates from the different polarity of the films: while InN films deposited directly on In2O3(111) are In-polar, they are N-polar when grown on the nitridated substrate.

  3. Three-dimensional Čerenkov tomography of energy deposition from ionizing radiation beams.

    PubMed

    Glaser, Adam K; Voigt, William H A; Davis, Scott C; Zhang, Rongxiao; Gladstone, David J; Pogue, Brian W

    2013-03-01

    Since its discovery during the 1930s the Čerenkov effect (light emission from charged particles traveling faster than the local speed of light in a dielectric medium) has been paramount in the development of high-energy physics research. The ability of the emitted light to describe a charged particle's trajectory, energy, velocity, and mass has allowed scientists to study subatomic particles, detect neutrinos, and explore the properties of interstellar matter. However, to our knowledge, all applications of the process to date have focused on the identification of particles themselves, rather than their effect upon the surroundings through which they travel. Here we explore a novel application of the Čerenkov effect for the recovery of the spatial distribution of ionizing radiation energy deposition in a medium and apply it to the issue of dose determination in medical physics. By capturing multiple projection images of the Čerenkov light induced by a medical linear accelerator x-ray photon beam, we demonstrate the successful three-dimensional tomographic reconstruction of the imparted dose distribution. PMID:23455248

  4. Investigation of Mn-implanted n-Si by low-energy ion beam deposition

    NASA Astrophysics Data System (ADS)

    Liu, Lifeng; Chen, Nuofu; Song, Shulin; Yin, Zhigang; Yang, Fei; Chai, Chunlin; Yang, Shaoyan; Liu, Zhikai

    2005-01-01

    Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5×10 17 cm -2. The samples were held at room temperature and at 300 °C during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300 °C than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300 °C is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300 °C has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300 °C shows ferromagnetic behavior at room temperature.

  5. Synthesis of individually tuned nanomagnets for Nanomagnet Logic by direct write focused electron beam induced deposition.

    PubMed

    Gavagnin, Marco; Wanzenboeck, Heinz D; Belić, Domagoj; Bertagnolli, Emmerich

    2013-01-22

    Nanomagnet Logic (NML) is a promising new technology for future logic which exploits interactions among magnetic nanoelements in order to encode and compute binary information. This approach overcomes the well-known limits of CMOS-based microelectronics by drastically reducing the power consumption of computational systems and by offering nonvolatility. An actual key challenge is the nanofabrication of such systems that, up to date, are prepared by complex multistep processes in planar technology. Here, we report the single-step synthesis of NML key elements by focused electron beam induced deposition (FEBID) using iron pentacarbonyl as a gas precursor. The resulting nanomagnets feature an inner iron part and a 3 nm iron oxide cover (core-shell structure). Full functionality of conventional NML gates from FEBID-nanowires was achieved. An advanced structure maintaining the gate functionality based on bended nanowires was realized. The unique design obtained by direct-writing reduces the error probability and may merge several NWs in future NML elements. PMID:23227975

  6. Tribological coatings for complex mechanical elements produced by supersonic cluster beam deposition of metal dichalcogenide nanoparticles

    NASA Astrophysics Data System (ADS)

    Piazzoni, C.; Buttery, M.; Hampson, M. R.; Roberts, E. W.; Ducati, C.; Lenardi, C.; Cavaliere, F.; Piseri, P.; Milani, P.

    2015-07-01

    Fullerene-like MoS2 and WS2 nanoparticles can be used as building blocks for the fabrication of fluid and solid lubricants. Metal dichalcogenide films have a very low friction coefficient in vacuum, therefore they have mostly been used as solid lubricants in space and vacuum applications. Unfortunately, their use is significantly hampered by the fact that in the presence of humidity, oxygen and moisture, the low-friction properties of these materials rapidly degrade due to oxidation. The use of closed-cage MoS2 and WS2 nanoparticles may eliminate this problem, although the fabrication of lubricant thin films starting from dichalcogenide nanoparticles is, to date, a difficult task. Here we demonstrate the use of supersonic cluster beam deposition for the coating of complex mechanical elements (angular contact ball bearings) with nanostructured MoS2 and WS2 thin films. We report structural and tribological characterization of the coatings in view of the optimization of tribological performances for aerospace applications.

  7. Gold nanoclusters on amorphous carbon synthesized by ion-beam deposition

    SciTech Connect

    Thune, Elsa; Carpene, Ettore; Sauthoff, Katharina; Seibt, Michael; Reinke, Petra

    2005-08-01

    Gold clusters have been deposited by a monoenergetic, mass-selected ion beam with low energies (20-350 eV) on amorphous carbon substrates in order to minimize the influence of the surface crystallinity and the ion-induced structural changes. Gold has been used as a model system, due to the poor reactivity with carbon, to study the ion-energy dependence, the temporal evolution, and the influence of the temperature on the cluster distribution. The cluster size is very sensitive to the energy and the mean size strongly decreases from 4 to less than 1 nm as the ion energy increases. We can also note that the size distribution becomes broader. For impact energies below 100 eV, surface processes dominate the cluster nucleation and growth. If higher energies are used, an increasing number of ions is implanted below the surface and different processes control the cluster formation. When the energy increases above 350 eV, the cluster size drastically drops below 5 nm. The samples are analyzed with different methods such as atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy to determine their size distribution, composition, and structure.

  8. Visible light active TiO 2 films prepared by electron beam deposition of noble metals

    NASA Astrophysics Data System (ADS)

    Hou, Xing-Gang; Ma, Jun; Liu, An-Dong; Li, De-Jun; Huang, Mei-Dong; Deng, Xiang-Yun

    2010-03-01

    TiO 2 films prepared by sol-gel method were modified by electron beam deposition of noble metals (Pt, Pd, and Ag). Effects of noble metals on the chemical and surface characteristics of the films were studied using XPS, TEM and UV-Vis spectroscopy techniques. Photocatalytic activity of modified TiO 2 films was evaluated by studying the degradation of methyl orange dye solution under visible light UV irradiation. The result of TEM reveals that most of the surface area of TiO 2 is covered by tiny particles of noble metals with diameter less than 1 nm. Broad red shift of UV-Visible absorption band of modified photocatalysts was observed. The catalytic degradation of methyl orange in aqueous solutions under visible light illumination demonstrates a significant enhancement of photocatalytic activity of these films compared with the un-loaded films. The photocatalytic efficiency of modified TiO 2 films by this method is affected by the concentration of impregnating solution.

  9. Three-dimensional Čerenkov tomography of energy deposition from ionizing radiation beams

    PubMed Central

    Glaser, Adam K.; Voigt, William H.A.; Davis, Scott C.; Zhang, Rongxiao; Gladstone, David J.; Pogue, Brian W.

    2013-01-01

    Since its discovery during the 1930’s, the Čerenkov effect (light emission from charged particles traveling faster than the local speed of light in a dielectric medium) has been paramount in the development of high-energy physics research. The ability of the emitted light to describe a charged particle’s trajectory, energy, velocity, and mass has allowed scientists to study subatomic particles, detect neutrinos, and explore the properties of interstellar matter. However, all applications of the process to date have focused on identification of particle’s themselves, rather than their effect upon the surroundings through which they travel. Here, we explore a novel application of the Čerenkov effect for the recovery of the spatial distribution of ionizing radiation energy deposition in a medium, and apply it to the issue of dose determination in medical physics. By capturing multiple projection images of the Čerenkov light induced by a medical linear accelerator (LINAC) x-ray photon beam, we demonstrate the successful three-dimensional (3D) tomographic reconstruction of the imparted dose distribution for the first time. PMID:23455248

  10. Bactericidal and biocompatible properties of TiN/Ag multilayered films by ion beam assisted deposition.

    PubMed

    Zhao, J; Cai, X M; Tang, H Q; Liu, T; Gu, H Q; Cui, R Z

    2009-12-01

    Nanoscale TiN/Ag multilayered films of thickness 500 nm were synthesized on AISI317 stainless steel by ion beam assisted deposition (IBAD) with the modulation period of 4, 5, 6, 7.5, and 12 nm. The bactericidal and biocompatible properties of TiN/Ag multilayered films were investigated through Gram negative E. coli bacteria and L929 cells (mice fibroblast) as well as human umbilical vein endothelial cells (HUVEC). The results show that the TiN/Ag multilayered films with the modulation period of 7.5 nm possess the strongest bactericidal property. The cytotoxicity grade of TiN/Ag multilayered coating with the modulation periods of 7.5 nm, 12 nm is in 0-1 scope, which indicates this film has no cytotoxicity to L929. HUVEC on TiN/Ag multilayered film grows well and shows good cellularity. Auger electronic spectroscopy reveals the relationship between the structure of TiN/Ag multilayered film and the biomedical properties. PMID:18553178

  11. Improved electron ionization ion source for the detection of supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Amirav, Aviv; Fialkov, Alexander; Gordin, Alexander

    2002-08-01

    An improved electron ionization (EI) ion source is described, based on the modification of a Brink-type EI ion source through the addition of a second cage with a fine mesh outside the ion chamber. The added outer cage shields the inner ion cage (ionization zone) against the penetration of the filament and electron repeller potentials, and thus results in the provision of ions with narrower ion energy distribution, hence improved ion-beam quality. The closer to zero electrical field inside the ion cage enables improved filtration (rejection) of ions that are produced from vacuum background compounds, based on difference in ion energies of beam and background species. The improved background ion filtration and ion-beam quality resulted in 2.6 times higher mass spectrometric ion signal, combined with 6.4 times better signal to noise ratio, in comparison with the same ion source having a single cage. The dual cage ion source further provides a smaller or no reduction of the electron emission current upon lowering the electron energy for achieving softer EI and/or electron attachment ionization. It also improves the long-term mass spectral and signal reproducibility and enables fast, automated change of the electron energy. Consequently, the dual cage EI ion source is especially effective for use with gas chromatography mass spectrometry with supersonic molecular beams (SMB), liquid chromatography mass spectrometry with SMB, ion guns with SMB, and any other experimental systems with SMB or nonthermal molecular beams.

  12. Effect of molecular weight distribution on e-beam exposure properties of polystyrene

    NASA Astrophysics Data System (ADS)

    Dey, Ripon Kumar; Cui, Bo

    2013-06-01

    Polystyrene is a negative electron beam resist whose exposure properties can be tuned simply by using different molecular weights (Mw). Most previous studies have used monodisperse polystyrene with a polydispersity index (PDI) of less than 1.1 in order to avoid any uncertainties. Here we show that despite the fact that polystyrene’s sensitivity is inversely proportional to its Mw, no noticeable effect of very broad molecular weight distribution on sensitivity, contrast and achievable resolution is observed. It is thus unnecessary to use the costly monodisperse polystyrene for electron beam lithography. Since the polydispersity is unknown for general purpose polystyrene, we simulated a high PDI polystyrene by mixing in a 1:1 weight ratio two polystyrene samples with Mw of 170 and 900 kg mol-1 for the high Mw range, and 2.5 and 13 kg mol-1 for the low Mw range. The exposure property of the mixture resembles that of a monodisperse polystyrene with similar number averaged molecular weight \\overline{{Mn}}, which indicates that it is \\overline{{Mn}} rather than \\overline{{Mw}} (weight averaged molecular weight) that dominates the exposure properties of polystyrene resist. This also implies that polystyrene of a certain molecular weight can be simulated by a mixture of two polystyrenes having different molecular weights.

  13. Three-dimensional imaging of the ultracold plasma formed in a supersonic molecular beam

    SciTech Connect

    Schulz-Weiling, Markus; Grant, Edward

    2015-06-29

    Double-resonant excitation of nitric oxide in a seeded supersonic molecular beam forms a state-selected Rydberg gas that evolves to form an ultracold plasma. This plasma travels with the propagation of the molecular beam in z over a variable distance as great as 600 mm to strike an imaging detector, which records the charge distribution in the dimensions, x and y. The ω{sub 1} + ω{sub 2} laser crossed molecular beam excitation geometry convolutes the axial Gaussian distribution of NO in the molecular beam with the Gaussian intensity distribution of the perpendicularly aligned laser beam to create an ellipsoidal volume of Rydberg gas. Detected images describe the evolution of this initial density as a function of selected Rydberg gas initial principal quantum number, n{sub 0}, ω{sub 1} laser pulse energy (linearly related to Rydberg gas density, ρ{sub 0}) and flight time. Low-density Rydberg gases of lower principal quantum number produce uniformly expanding, ellipsoidal charge-density distributions. Increase either of n{sub 0} or ρ{sub 0} breaks the ellipsoidal symmetry of plasma expansion. The volume bifurcates to form repelling plasma volumes. The velocity of separation depends on n{sub 0} and ρ{sub 0} in a way that scales uniformly with ρ{sub e}, the density of electrons formed in the core of the Rydberg gas by prompt Penning ionization. Conditions under which this electron gas drives expansion in the long axis dimension of the ellipsoid favours the formation of counter-propagating shock waves.

  14. Pulsed supersonic molecular beam for characterization of chemically active metal-organic complexes at surfaces

    NASA Astrophysics Data System (ADS)

    Lear, Amanda M.

    Metal-organic coordination networks (MOCNs) at surfaces consist of a complex of organic ligands bound to an atomic metal center. The MOCNs, when chosen appropriately, can form highly-ordered arrays at surfaces. Ultra-high vacuum surface studies allow control of surface composition and provide 2D growth restrictions, which lead to under-coordinated metal centers. These systems provide an opportunity to tailor the chemical function of the metal centers due to the steric restrictions imposed by the surface. Tuning the adsorption/desorption energy at a metal center and developing a cooperative environment for catalysis are the key scientific questions that motivate the construction of a molecular beam surface analysis system. Characterization of the created systems can be performed utilizing a pulsed supersonic molecular beam (PSMB) in unison with a quadrupole mass spectrometer. A PSMB allows for the highly controlled delivery of reactants with well-defined energy to a given platform making it possible to elucidate detailed chemical tuning information. In this thesis, a summary of prior theoretical molecular beam derivations is provided. Design considerations and an overview of the construction procedure for the current molecular beam apparatus, including initial characterization experiments, are presented. By impinging an Ar beam on a Ag(111) surface, the location of the specular angle (˜65°) and rough sample perimeter coordinates were determined. Additionally, surface analysis experiments, mainly Auger Electron Spectroscopy (AES), were performed to investigate the oxidation of epitaxial graphene on the SiC(0001) surface utilizing an oxygen cracking method. The AES experiments are described in detail and highlight the challenges that were faced when several different graphene samples were used for the oxygen adsorption/desorption experiments.

  15. In situ study of erosion and deposition of amorphous hydrogenated carbon films by exposure to a hydrogen atom beam

    SciTech Connect

    Markelj, Sabina; Pelicon, Primoz; Cadez, Iztok; Schwarz-Selinger, Thomas; Jacob, Wolfgang

    2012-07-15

    This paper reports on the first dual-beam experiment employing a hydrogen atom beam for sample exposure and an ion beam for analysis, enabling in situ and real-time studies of hydrogen atom interaction with materials. The erosion of an amorphous hydrogenated carbon (a-C:H) layer by deuterium atoms at 580 K sample temperature was studied and the uptake of deuterium during the erosion process was measured in real time. The deuterium areal density increased at the beginning to 7.3 Multiplication-Sign 10{sup 15} D cm{sup -2}, but then stabilized at a constant value of 5.5 Multiplication-Sign 10{sup 15} D cm{sup -2}. Formation of a polymer-like deposit on an a-C:H layer held at room temperature and subjected to the deuterium atom beam was observed and also studied in situ. For both erosion and deposition studies an a-{sup 13}C:H layer on top of an Si substrate was used as a sample, making the experiments isotopically fully specified and thereby differentiating the deposited from the original layer and the interacting D atoms from H atoms present in the layer and in the residual vacuum. From the deposition study it was shown that carbon in the deposited layer originates from carbon-carrying species in the background vacuum that interact with hydrogen atoms. The areal density of the carbon at the surface was determined from the energy shift of the Si edge in the Rutherford backscattering spectrum. The cross section for {sup 7}Li on D at 4.3 MeV Li ion energy and at a recoil angle of 30 Degree-Sign was also determined to be (236 {+-} 16) Multiplication-Sign 10{sup -27} cm{sup 2}/sr. This is a factor of 3 {+-} 0.2 times higher than the Rutherford elastic cross section.

  16. Tunable molecular orientation and elevated thermal stability of vapor-deposited organic semiconductors

    PubMed Central

    Walters, Diane M.; Lyubimov, Ivan; de Pablo, Juan J.; Ediger, M. D.

    2015-01-01

    Physical vapor deposition is commonly used to prepare organic glasses that serve as the active layers in light-emitting diodes, photovoltaics, and other devices. Recent work has shown that orienting the molecules in such organic semiconductors can significantly enhance device performance. We apply a high-throughput characterization scheme to investigate the effect of the substrate temperature (Tsubstrate) on glasses of three organic molecules used as semiconductors. The optical and material properties are evaluated with spectroscopic ellipsometry. We find that molecular orientation in these glasses is continuously tunable and controlled by Tsubstrate/Tg, where Tg is the glass transition temperature. All three molecules can produce highly anisotropic glasses; the dependence of molecular orientation upon substrate temperature is remarkably similar and nearly independent of molecular length. All three compounds form “stable glasses” with high density and thermal stability, and have properties similar to stable glasses prepared from model glass formers. Simulations reproduce the experimental trends and explain molecular orientation in the deposited glasses in terms of the surface properties of the equilibrium liquid. By showing that organic semiconductors form stable glasses, these results provide an avenue for systematic performance optimization of active layers in organic electronics. PMID:25831545

  17. Proposed Molecular Beam Determination of Energy Partition in the Photodissociation of Polyatomic Molecules

    DOE R&D Accomplishments Database

    Zare, P. N.; Herschbach, D. R.

    1964-01-29

    Conventional photochemical experiments give no information about the partitioning of energy between translational recoil and internal excitation of the fragment molecules formed in photodissociation of a polyatomic molecule. In a molecular beam experiment, it becomes possible to determine the energy partition from the form of the laboratory angular distribution of one of the photodissociation products. A general kinematic analysis is worked out in detail, and the uncertainty introduced by the finite angular resolution of the apparatus and the velocity spread in the parent beam is examined. The experimental requirements are evaluated for he photolysis of methyl iodide by the 2537 angstrom Hg line.

  18. New MBE (molecular beam epitaxy) buffer used to eliminate backgating in gaas mesfets

    SciTech Connect

    Smith, F.W.; Calawa, A.R.; Chen, C.L.; Manfra, M.J.; Mahoney, L.J.

    1988-02-01

    A new buffer layer has been developed that eliminates backgating between MESFET's fabricated in active layers grown upon it. The new buffer is grown by molecular beam epitaxy (MBE) at low substrate temperatures (150-300 C) using Ga and As4 beam fluxes. It is highly resistive, optically inactive, and crystalline, and high-quality GaAs active layers can be grown on top of the new buffer. MESFET's fabricated in active layers grown on top of this new buffer show improved output resistance and breakdown voltages; the dc and Rf characteristics are otherwise comparable to MESFET's fabricated by alternative means and with other buffer layers.

  19. Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bauer, Jan; Fleischer, Frank; Breitenstein, Otwin; Schubert, Luise; Werner, Peter; Gösele, Ulrich; Zacharias, Margit

    2007-01-01

    Single undoped Si nanowires were electrically characterized. The nanowires were grown by molecular-beam epitaxy on n+ silicon substrates and were contacted by platinum/iridium tips. I-V curves were measured and electron beam induced current investigations were performed on single nanowires. It was found that the nanowires have an apparent resistivity of 0.85Ωcm, which is much smaller than expected for undoped Si nanowires. The conductance is explained by hopping conductivity at the Si -SiO2 interface of the nanowire surface.

  20. LC-MS with electron ionization of cold molecules in supersonic molecular beams

    NASA Astrophysics Data System (ADS)

    Granot, Ori; Amirav, Aviv

    2005-06-01

    A new approach is described for the combination of electron ionization and LC-MS based on sample ionization as vibrationally cold molecules in a supersonic molecular beam (Cold EI). Cold EI of sample compounds in liquid solutions (methanol, acetonitrile, water, etc.) is achieved through spray formation, followed by soft thermal vaporization of the sample particles prior to their supersonic expansion and direct electron ionization of the sample compounds while they are contained in a supersonic molecular beam (SMB). Cold EI mass spectra were demonstrated to combine an enhanced molecular ion and improved mass spectral information (in comparison with standard EI), plus all the library searchable fragments. Cold EI enables the ionization of a broad range of compounds, including the full range of non-polar samples. Four orders of magnitude linear dynamic range is demonstrated and a detection limit of 2 pg was achieved for a 774 amu compound in single ion monitoring mode at m/z = 774. The method and apparatus are under continuous development and we feel that it can excel particularly in the analysis of unknown samples, while enabling fast LC-MS analysis through automated mass spectral deconvolution of coeluting LC peaks. In addition, the same MS system can also serve as an advanced GC-MS with supersonic molecular beams.

  1. Chemical vapor deposition graphene as structural template to control interfacial molecular orientation of chloroaluminium phthalocyanine

    NASA Astrophysics Data System (ADS)

    Ying Mao, Hong; Wang, Rui; Wang, Yu; Chao Niu, Tian; Qiang Zhong, Jian; Yang Huang, Ming; Chen Qi, Dong; Ping Loh, Kian; Thye Shen Wee, Andrew; Chen, Wei

    2011-08-01

    Chemical vapor deposition (CVD) graphene has been used as an effective structural template to manipulate molecular orientation of organic thin film of chloroaluminium phthalocyanine (ClAlPc) on indium tin oxide (ITO) electrode. As revealed by in-situ near-edge x-ray adsorption fine structure measurement, ClAlPc molecules on the CVD graphene modified ITO electrode adopt a well-aligned lying-down configuration with their molecular π-plane nearly parallel to the electrode surface, in contrast to the random orientation of ClAlPc molecules on the bare ITO electrode. This lying-down configuration results in an optimized stacking of the molecular π-plane perpendicular to the electrode surface and hence facilitates efficient charge transport along this direction.

  2. Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

    SciTech Connect

    Kroczynski, R.J.; Strongin, D.R.; Ruckman, M.W.; Strongin, M.

    1993-12-31

    This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B{sub 2}H{sub 6} and ammonia (NH{sub 3}) or only B{sub 2}H{sub 6}, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 {Angstrom} thick.

  3. Ion beam deposition processes for improved hard bias magnetic and device properties in the abutted junction configuration

    NASA Astrophysics Data System (ADS)

    Devasahayam, Adrian J.; Wang, Jinsong; Hedge, Hari

    2000-05-01

    Permanent magnet films of Cr/CoCrPt for use in an abutted junction hard bias scheme were deposited by an ion beam deposition (IBD) system. The deposition angle control of IBD systems was employed to yield some excellent material and device related improvements. For films with the structure Cr-50 Å/CoCrPt-250 Å, increasing the deposition angle θ (as measured from the substrate normal) of the Cr layer from 20° to 60°, resulted in an increase in coercivity from 1860 to 1905 Oe. X-ray diffraction measurements showed that this improvement was related to an increase in CoCrPt in-plane texture and a decrease in c-axis perpendicular texture. The reason for this increase in in-plane texture is that there is better epitaxial matching between the CoCrPt and the Cr underlayer brought about by a change in the lattice dimension of Cr as a result of changing stress levels. Another positive effect of depositing the Cr at a larger angle is that the Cr would be thicker farther into the abutted junction and thus delay the onset of poor magnetic properties due to a thinning underlayer. The angle of deposition parameter can be used to further advantage by depositing the lead layer at a larger angle than the permanent magnet layers. This type of scheme would allow the leads to encroach over the permanent magnets and make direct contact with the sensor, yielding low contact resistance.

  4. Tilting of carbon encapsulated metallic nanocolumns in carbon-nickel nanocomposite films by ion beam assisted deposition

    SciTech Connect

    Krause, Matthias; Muecklich, Arndt; Zschornak, Matthias; Wintz, Sebastian; Gemming, Sibylle; Abrasonis, Gintautas; Oates, Thomas W. H.; Luis Endrino, Jose

    2012-07-30

    The influence of assisting low-energy ({approx}50-100 eV) ion irradiation effects on the morphology of C:Ni ({approx}15 at. %) nanocomposite films during ion beam assisted deposition (IBAD) is investigated. It is shown that IBAD promotes the columnar growth of carbon encapsulated metallic nanoparticles. The momentum transfer from assisting ions results in tilting of the columns in relation to the growing film surface. Complex secondary structures are obtained, in which a significant part of the columns grows under local epitaxy via the junction of sequentially deposited thin film fractions. The influence of such anisotropic film morphology on the optical properties is highlighted.

  5. Structure and interfacial analysis of nanoscale TiNi thin film prepared by biased target ion beam deposition

    SciTech Connect

    Hou, Huilong; Hamilton, Reginald F. Horn, Mark W.

    2015-07-15

    Ultrathin, 65 nm thick, TiNi alloy films were fabricated by cosputtering Ti and Ni targets using the recently developed biased target ion beam deposition technique. Preheating the substrate by exposure to a low energy ion source resulted in as-deposited films with a pure B2 atomic crystal structure containing no secondary crystal structures or precipitates. Continuous films were produced with a smooth surface and minimal substrate/film interfacial diffusion. The diffusion layer was a small ratio of film thickness, which is a prerequisite for the B2 phase to undergo the martensitic transformation in ultrathin films.

  6. Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

    SciTech Connect

    Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene

    2012-11-19

    Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.

  7. Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process

    SciTech Connect

    Malobabic, Sina; Jupe, Marco; Ristau, Detlev

    2013-06-03

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM) field leads to a significant change in plasma properties and deposition rate distributions, whereas an increase in deposition rate along the centerline of the axial EM field around 150% was observed. These fundamental studies on the prototype are the basis for the development of an applicable and workable design of a separation device.

  8. Determination of molecular-ion structures through the use of accelerated beams

    SciTech Connect

    Gemmell, D.S.

    1987-01-01

    In this talk we report on recent research on molecular-ion structures using fast molecular-ion beams provided by Argonne's 5-MV Dynamitron accelerator. The method has become known as the ''Coulomb-explosion'' technique. When molecular-ion projectiles travelling at velocities of a few percent of the velocity of light strike a foil, the electrons that bind the molecular projectiles are almost always totally stripped off within the first few Angstroms of penetration into the solid target. This leaves a cluster of bare (or nearly bare) nuclei which separate rapidly as a result of their mutual Coulomb repulsion. This violent dissociation process in which the initial electrostatic potential energy is converted into kinetic energy of relative motion in the center-of-mass, has been termed a ''Coulomb explosion.'' 4 refs., 2 figs.

  9. Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mazet, L.; Bachelet, R.; Louahadj, L.; Albertini, D.; Gautier, B.; Cours, R.; Schamm-Chardon, S.; Saint-Girons, G.; Dubourdieu, C.

    2014-12-01

    Integration of epitaxial complex ferroelectric oxides such as BaTiO3 on semiconductor substrates depends on the ability to finely control their structure and properties, which are strongly correlated. The epitaxial growth of thin BaTiO3 films with high interfacial quality still remains scarcely investigated on semiconductors; a systematic investigation of processing conditions is missing although they determine the cationic composition, the oxygen content, and the microstructure, which, in turn, play a major role on the ferroelectric properties. We report here the study of various relevant deposition parameters in molecular beam epitaxy for the growth of epitaxial tetragonal BaTiO3 thin films on silicon substrates. The films were grown using a 4 nm-thick epitaxial SrTiO3 buffer layer. We show that the tetragonality of the BaTiO3 films, the crystalline domain orientations, and SiO2 interfacial layer regrowth strongly depend on the oxygen partial pressure and temperature during the growth and on the post-deposition anneal. The ferroelectricity of the films, probed using piezoresponse force microscopy, is obtained in controlled temperature and oxygen pressure conditions with a polarization perpendicular to the surface.

  10. Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy

    PubMed Central

    2012-01-01

    Polar and nonpolar ZnO thin films were deposited on MgO (001) substrates under different deposition parameters using oxygen plasma-assisted molecular beam epitaxy (MBE). The orientations of ZnO thin films were investigated by in situ reflection high-energy electron diffraction and ex situ X-ray diffraction (XRD). The film roughness measured by atomic force microscopy evolved as a function of substrate temperature and was correlated with the grain sizes determined by XRD. Synchrotron-based X-ray absorption spectroscopy (XAS) was performed to study the conduction band structures of the ZnO films. The fine structures of the XAS spectra, which were consistent with the results of density functional theory calculation, indicated that the polar and nonpolar ZnO films had different electronic structures. Our work suggests that it is possible to vary ZnO film structures from polar to nonpolar using the MBE growth technique and hence tailoring the electronic structures of the ZnO films. PACS: 81; 81.05.Dz; 81.15.Hi. PMID:22405056

  11. Molecular beams entwined with quantum theory: A bouquet for Max Planck

    NASA Astrophysics Data System (ADS)

    Herschbach, D.

    2001-01-01

    In an era when the fledgling quantum theory was uncertain and even gave contradictory answers, Otto Stern undertook to employ molecular beams to test directly fundamental aspects of the theory. During 1921-1935, this led to five decisive experiments reviewed here, resulting in the discovery or demonstration of space quantization, de Broglie matter waves, anomalous magnetic moments of the proton and neutron, recoil of an atom on emission of a photon, and the limitation of scattering cross-sections for molecular collisions imposed by the uncertainty principle.

  12. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    SciTech Connect

    Wang, Lai-Sheng; Reutt-Robey, J.E.; Niu, B.; Lee, Y.T.; Shirley, D.A.; Maryland Univ., College Park, MD . Dept. of Chemistry and Biochemistry; Lawrence Berkeley Lab., CA )

    1989-07-01

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeI{alpha} (584{angstrom}) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As{sub 2}, As{sub 4}, and ZnCl{sub 2} are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab.

  13. Comb-assisted cavity ring-down spectroscopy of a buffer-gas-cooled molecular beam.

    PubMed

    Santamaria, Luigi; Sarno, Valentina Di; Natale, Paolo De; Rosa, Maurizio De; Inguscio, Massimo; Mosca, Simona; Ricciardi, Iolanda; Calonico, Davide; Levi, Filippo; Maddaloni, Pasquale

    2016-06-22

    We demonstrate continuous-wave cavity ring-down spectroscopy of a partially hydrodynamic molecular beam emerging from a buffer-gas-cooling source. Specifically, the (ν1 + ν3) vibrational overtone band of acetylene (C2H2) around 1.5 μm is accessed using a narrow-linewidth diode laser stabilized against a GPS-disciplined rubidium clock via an optical frequency comb synthesizer. As an example, the absolute frequency of the R(1) component is measured with a fractional accuracy of ∼1 × 10(-9). Our approach represents the first step towards the extension of more sophisticated cavity-enhanced interrogation schemes, including saturated absorption cavity ring-down or two-photon excitation, to buffer-gas-cooled molecular beams. PMID:27273337

  14. A new high intensity and short-pulse molecular beam valve.

    PubMed

    Yan, B; Claus, P F H; van Oorschot, B G M; Gerritsen, L; Eppink, A T J B; van de Meerakker, S Y T; Parker, D H

    2013-02-01

    In this paper, we report on the design and performance of a new home-built pulsed gas valve, which we refer to as the Nijmegen Pulsed Valve (NPV). The main output characteristics include a short pulse width (as short as 20 μs) combined with operating rates up to 30 Hz. The operation principle of the NPV is based on the Lorentz force created by a pulsed current passing through an aluminum strip located within a magnetic field, which opens the nozzle periodically. The amplitude of displacement of the opening mechanism is sufficient to allow the use of nozzles with up to 1.0 mm diameter. To investigate the performance of the valve, several characterizations were performed with different experimental methods. First, a fast ionization gauge was used to measure the beam intensity of the free jet emanating from the NPV. We compare free jets from the NPV with those from several other pulsed valves in current use in our laboratory. Results showed that a high intensity and short pulse-length beam could be generated by the new valve. Second, the NPV was tested in combination with a skimmer, where resonance enhanced multiphoton ionization combined with velocity map imaging was used to show that the NPV was able to produce a pulsed molecular beam with short pulse duration (~20 μs using 0.1% NO/He at 6 bars) and low rotational temperature (~1 K using 0.5% NO/Ar at 6 bars). Third, a novel two-point pump-probe method was employed which we label double delay scan. This method allows a full kinematic characterization of the molecular beam, including accurate speed ratios at different temporal positions. It was found that the speed ratio was maximum (S = 50 using 0.1% NO/He at 3 bars) at the peak position of the molecular beam and decreased when it was on the leading or falling edge. PMID:23464190

  15. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  16. Mn2Au: body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitaxy.

    PubMed

    Wu, Han-Chun; Liao, Zhi-Min; Sofin, R G Sumesh; Feng, Gen; Ma, Xiu-Mei; Shick, Alexander B; Mryasov, Oleg N; Shvets, Igor V

    2012-12-11

    Mn(2)Au, a layered bimetal, is successfully grown using molecular beam epitaxy (MBE). The experiments and theoretical calculations presented suggest that Mn(2)Au film is antiferromagnetic with a very low critical temperature. The antiferromagnetic nature is demonstrated by measuring the exchange-bias effect of Mn(2)Au/Fe bilayers. This study establishes a primary basis for further research of this new antiferromagnet in spin-electronic device applications. PMID:22996352

  17. Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

    NASA Astrophysics Data System (ADS)

    Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K.

    1998-05-01

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

  18. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  19. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    SciTech Connect

    Bouravleuv, A. D. Nevedomskii, V. N.; Ubyivovk, E. V.; Sapega, V. F.; Khrebtov, A. I.; Samsonenko, Yu. B.; Cirlin, G. E.; Ustinov, V. M.

    2013-08-15

    Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

  20. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy

    SciTech Connect

    Hackley, Justin; Richardson, Christopher J. K.; Sarney, Wendy L.

    2013-11-15

    The carbonization of an antimony-terminated Si (111) surface in a solid source molecular beam epitaxy system is presented. Reflection high-energy electron diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy are used to characterize samples grown with and without antimony termination. It is shown that the antimony-terminated surface promotes the formation of thin, smooth and continuous SiC films at a relatively low temperature of 800 °C.

  1. Very slow expansion of an ultracold plasma formed in a seeded supersonic molecular beam of NO

    NASA Astrophysics Data System (ADS)

    Morrison, J. P.; Rennick, C. J.; Grant, E. R.

    2009-06-01

    The double-resonant laser excitation of nitric oxide, cooled to 1 K in a seeded supersonic molecular beam, yields a gas of ≈1012 molecules per cubic centimeter in a single selected Rydberg state. This population evolves to produce prompt free electrons, and a durable cold plasma of electrons and intact NO+ ions. This plasma travels with the molecular beam through a field-free region to encounter a grid. The atomic weight of the expansion gas controls the beam velocity and hence the flight time from the interaction region to the grid. Monitoring electron production as the plasma traverses this grid measures its longitudinal width as a function of flight time. Comparing these widths to the width of the laser beam that defines the initial size of the illuminated volume allows us to gauge the rate of expansion of the plasma. We find that the plasma created from the evolution of a Rydberg gas of NO expands at a small but measurable rate, and that this rate of expansion accords with the Vlasov equations for an initial electron temperature of Te≈7K .

  2. Fabrication of electron beam deposited tip for atomic-scale atomic force microscopy in liquid.

    PubMed

    Miyazawa, K; Izumi, H; Watanabe-Nakayama, T; Asakawa, H; Fukuma, T

    2015-03-13

    Recently, possibilities of improving operation speed and force sensitivity in atomic-scale atomic force microscopy (AFM) in liquid using a small cantilever with an electron beam deposited (EBD) tip have been intensively explored. However, the structure and properties of an EBD tip suitable for such an application have not been well-understood and hence its fabrication process has not been established. In this study, we perform atomic-scale AFM measurements with a small cantilever and clarify two major problems: contaminations from a cantilever and tip surface, and insufficient mechanical strength of an EBD tip having a high aspect ratio. To solve these problems, here we propose a fabrication process of an EBD tip, where we attach a 2 μm silica bead at the cantilever end and fabricate a 500-700 nm EBD tip on the bead. The bead height ensures sufficient cantilever-sample distance and enables to suppress long-range interaction between them even with a short EBD tip having high mechanical strength. After the tip fabrication, we coat the whole cantilever and tip surface with Si (30 nm) to prevent the generation of contamination. We perform atomic-scale AFM imaging and hydration force measurements at a mica-water interface using the fabricated tip and demonstrate its applicability to such an atomic-scale application. With a repeated use of the proposed process, we can reuse a small cantilever for atomic-scale measurements for several times. Therefore, the proposed method solves the two major problems and enables the practical use of a small cantilever in atomic-scale studies on various solid-liquid interfacial phenomena. PMID:25697199

  3. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    NASA Astrophysics Data System (ADS)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  4. The diamond pyramid structure in electroless copper deposit, its atomic model and molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Wu, X.; Sha, W.

    2008-12-01

    In this paper, we report the discovery of the diamond pyramid structures in the electroless copper deposits on both epoxy and stainless steel substrates. The surface morphology of the structure was characterized with scanning electron microscope (SEM). According to the morphological feature of the structure, an atom model was brought forward in order to describe the possible mechanism of forming such structure. Molecular dynamics (MD) simulations were then carried out to investigate the growing process of the diamond pyramid structure. The final structures of the simulation were compared with the SEM images and the atomic model. The radial distribution function of the final structures of the simulation was compared with that calculated from the X-ray diffraction pattern of the electroless copper deposit sample.

  5. Electron ionization LC-MS with supersonic molecular beams--the new concept, benefits and applications.

    PubMed

    Seemann, Boaz; Alon, Tal; Tsizin, Svetlana; Fialkov, Alexander B; Amirav, Aviv

    2015-11-01

    A new type of electron ionization LC-MS with supersonic molecular beams (EI-LC-MS with SMB) is described. This system and its operational methods are based on pneumatic spray formation of the LC liquid flow in a heated spray vaporization chamber, full sample thermal vaporization and subsequent electron ionization of vibrationally cold molecules in supersonic molecular beams. The vaporized sample compounds are transferred into a supersonic nozzle via a flow restrictor capillary. Consequently, while the pneumatic spray is formed and vaporized at above atmospheric pressure the supersonic nozzle backing pressure is about 0.15 Bar for the formation of supersonic molecular beams with vibrationally cold sample molecules without cluster formation with the solvent vapor. The sample compounds are ionized in a fly-though EI ion source as vibrationally cold molecules in the SMB, resulting in 'Cold EI' (EI of vibrationally cold molecules) mass spectra that exhibit the standard EI fragments combined with enhanced molecular ions. We evaluated the EI-LC-MS with SMB system and demonstrated its effectiveness in NIST library sample identification which is complemented with the availability of enhanced molecular ions. The EI-LC-MS with SMB system is characterized by linear response of five orders of magnitude and uniform compound independent response including for non-polar compounds. This feature improves sample quantitation that can be approximated without compound specific calibration. Cold EI, like EI, is free from ion suppression and/or enhancement effects (that plague ESI and/or APCI) which facilitate faster LC separation because full separation is not essential. The absence of ion suppression effects enables the exploration of fast flow injection MS-MS as an alternative to lengthy LC-MS analysis. These features are demonstrated in a few examples, and the analysis of the main ingredients of Cannabis on a few Cannabis flower extracts is demonstrated. Finally, the advantages of

  6. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes.

    PubMed

    Tu, F; Drost, M; Vollnhals, F; Späth, A; Carrasco, E; Fink, R H; Marbach, H

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit-vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2-16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties. PMID:27454990

  7. Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1979-01-01

    In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi The Government of the United States of America has rights in this invention pursuant to Department of Energy Contract No. EY-76-C-03-1283.

  8. Collapse of a composite beam made from ultra high molecular-weight polyethylene fibres

    NASA Astrophysics Data System (ADS)

    Liu, G.; Thouless, M. D.; Deshpande, V. S.; Fleck, N. A.

    2014-02-01

    Hot-pressed laminates with a [0/90]48 lay-up, consisting of 83% by volume of ultra high molecular-weight polyethylene (UHMWPE) fibres, and 17% by volume of polyurethane (PU) matrix, were cut into cantilever beams and subjected to transverse end-loading. The collapse mechanisms were observed both visually and by X-ray scans. Short beams deform elastically and collapse plastically in longitudinal shear, with a shear strength comparable to that observed in double notch, interlaminar shear tests. In contrast, long cantilever beams deform in bending and collapse via a plastic hinge at the built-in end of the beam. The plastic hinge is formed by two wedge-shaped microbuckle zones that grow in size and in intensity with increasing hinge rotation. This new mode of microbuckling under macroscopic bending involves both elastic bending and shearing of the plies, and plastic shear of the interface between each ply. The double-wedge pattern contrasts with the more usual parallel-sided plastic microbuckle that occurs in uniaxial compression. Finite element simulations and analytical models give additional insight into the dominant material and geometric parameters that dictate the collapse response of the UHMWPE composite beam in bending. Detailed comparisons between the observed and predicted collapse responses are used in order to construct a constitutive model for laminated UHMWPE composites.

  9. In situ mass measurement of electron-beam-induced nanometer-sized W-related deposits using a carbon nanotube cantilever

    SciTech Connect

    Sawaya, Shintaro; Akita, Seiji; Nakayama, Yoshikazu

    2006-11-06

    Using a carbon nanotube oscillator, the authors performed in situ measurements of densities of electron-beam-induced tungsten compounds with size of less than 100 nm. Total mass of the deposit was proportional to the deposition time. A higher deposition rate was obtained at lower electron-beam acceleration voltage. Density of the deposit decreased from 2.7 to 1.4 g/cm{sup 3} with increasing acceleration voltage from 5 to 15 kV. These results indicate that the increased density with low-acceleration voltage produces effective decomposition of W(CO){sub 6}.

  10. Ion-beam-assisted deposition of MoS2 and other low-friction films. Interim report, Jun 88-Jun 92

    SciTech Connect

    Bolster, R.N.

    1992-09-11

    Vacuum-deposited films of molybdenum disulfide (MoS2) are effective as solid lubricants. Ion-beam-assisted deposition, which employs ion beam sputtering with an assist beam impinging on the growing film, has been investigated as a means of preparing low-friction high endurance coatings. The apparatus used and some of the techniques involved are described. Ion source operating parameters were optimized and the assist beam ion flux was quantified and found to follow a power-law relationship with beam power. The best way to produce MoS2 films was found to be cosputtering from separate Mo and S targets with deposition rates adjusted to obtain the desired stoichiometry. Deposition rates were found to also follow a power-law relationship with beam power, and formulae are given for predicting them, the ratio of assist ions to film atoms, and the effect of assist beam sputtering on film thickness. Inverse formulae are given for determining process parameters needed to achieve a selected film thickness and composition. A composite target for simultaneous Mo and S sputtering was developed. Deposition rates were determined for other metals: W, N1, Co, Cu, and Pb. Formulae relating target-to-substrate distance to deposition rate are given.

  11. Dynamics of Molecular Orientation Observed Using Angle Resolved Photoemission Spectroscopy during Deposition of Pentacene on Graphite.

    PubMed

    Park, Sang Han; Kwon, Soonnam

    2016-04-19

    A real-time method to observe both the structural and the electronic configuration of an organic molecule during deposition is reported for the model system of pentacene on graphite. Structural phase transition of the thin films as a function of coverage is monitored by using in situ angle resolved photoemission spectroscopy (ARPES) results to observe the change of the electronic configuration at the same time. A photoemission theory that uses independent atomic center approximations is introduced to identify the molecular orientation from the ARPES technique. This study provides a practical insight into interpreting ARPES data regarding dynamic changes of molecular orientation during initial growth of molecules on a well-defined surface. PMID:26999332

  12. A novel approach in controlling the conductivity of thin films using molecular layer deposition

    NASA Astrophysics Data System (ADS)

    Lushington, Andrew; Liu, Jian; Bannis, Mohammad N.; Xiao, Biwei; Lawes, Stephen; Li, Ruying; Sun, Xueliang

    2015-12-01

    Here we present a novel way to grow aluminum alkoxide films with tunable conductivity with molecular level accuracy with the use of molecular layer deposition (MLD). Alternating exposures of trimethylaluminum (TMA), ethylene glycol (EG), and terephthaloyl chloride (TC) are used to grow the aluminium alkoxide films. Control over film composition was accomplished by alternating cycles of EG and TC between cycles of TMA and EG. In this fashion the aluminum to carbon ratio can be accurately controlled. These films were then pyrolyzed under a reducing atmosphere to yield a conductive Al2O3/carbon composite. Raman spectroscopy determined that nanocrystalline sp2-graphitic carbon was formed following pyrolysis while sheet resistance measurements determined that conductivity of the film is directly related to aluminium-carbon ratio. To further elucidate the origin of conductivity within the film, synchrotron based XPS was performed.

  13. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing.

    PubMed

    Makhloufi, Hajer; Boonpeng, Poonyasiri; Mazzucato, Simone; Nicolai, Julien; Arnoult, Alexandre; Hungria, Teresa; Lacoste, Guy; Gatel, Christophe; Ponchet, Anne; Carrère, Hélène; Marie, Xavier; Fontaine, Chantal

    2014-01-01

    We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well. PMID:24636335

  14. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

    PubMed Central

    2014-01-01

    We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well. PMID:24636335

  15. The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

    PubMed Central

    Thorman, Rachel M; Kumar T. P., Ragesh; Fairbrother, D Howard

    2015-01-01

    Summary Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the

  16. Atomic/molecular layer deposition: a direct gas-phase route to crystalline metal-organic framework thin films.

    PubMed

    Ahvenniemi, E; Karppinen, M

    2016-01-21

    Atomic/molecular layer deposition offers us an elegant way of fabricating crystalline copper(ii)terephthalate metal-organic framework (MOF) thin films on various substrate surfaces. The films are grown from two gaseous precursors with a digital atomic/molecular level control for the film thickness under relatively mild conditions in a simple and fast one-step process. PMID:26612265

  17. Development of a molecular beam technique to study early solar system silicon reactions

    NASA Technical Reports Server (NTRS)

    Dong, Q. W.; Thiemens, M. H.

    1993-01-01

    Silicon monoxide is one of the major gas phase silicon bearing components observed in astronomical environments. Silicon oxide serves as the major rock forming material for terrestrial and meteoritic bodies. It is known that several gas phase reactions produce mass independent isotopic fractionations which possess the same delta(O-17)/delta(O-18) ratio observed in Allende inclusions. The general symmetry dependence of the chemically produced mass independent isotopic fractionation process suggests that there are several plausible reactions which could occur in the early solar system which may lead to production of the observed meteoritic oxygen isotopic anomalies. An important component in exploring the role of such processes is the need to experimentally determine the isotopic fractionations for specific reactions of relevance to the early solar system. It has already been demonstrated that atomic oxygen reaction with CO, a major nebular oxygen bearing species, produces a large (approximately 90 percent), mass independent isotopic fractionation. The next hurdle regarding assessing the involvement of symmetry dependent isotopic fractionation processes in the pre-solar nebula is to determine isotopic fractionation factors associated with gas phase reactions of metallic oxides. In particular, a reaction such as O + SiO yields SiO2 is a plausible nebular reaction which could produce a delta(O-17) is approximately delta(O-18) fractionation based upon molecular symmetry considerations. While the isotopic fractionations during silicate evaporation and condensation have been determined, there are no isotopic studies of controlled, gas phase nucleation processes. In order to carefully control the reaction kinetics, a molecular beam apparatus has been constructed. This system produces a supersonic, collimated beam of SiO molecules which is reacted with a second beam of oxygen atoms. An important feature of molecular beams is that they operate at sufficiently low pressures

  18. Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

    SciTech Connect

    Stradins, P.; Kunz, O.; Young, D. L.; Yan, Y.; Jones, K. M.; Xu, Y.; Reedy, R. C.; Branz, H. M.; Aberle, A. G.; Wang, Q.

    2007-01-01

    Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

  19. Ultrathin films of organic networks as nanofiltration membranes via solution-based molecular layer deposition.

    PubMed

    Qian, Huidong; Li, Shenghai; Zheng, Jifu; Zhang, Suobo

    2012-12-21

    Ultrathin films of organic networks on various substrates were fabricated through the solution-based molecular layer deposition (MLD) technique. The rigid tetrahedral geometries of polyfunctional amine and acyl chloride involved in the reaction ensure the continuity of the polymerization process. A linear increase in film thickness with respect to cycle number was observed by UV-vis adsorption, ellipsometry, and quartz crystal microbalance. The growth rate per MLD cycle is 1.6 nm, which can be controlled at the single molecular level. For the first time, we develop the MLD method on the top of hydrolyzed PAN substrate, resulting in nanofiltration (NF) membranes. The stepwise growth was monitored via attenuated total reflectance infrared studies. The separation performance of the obtained membrane for various solutes was sensitive to the terminated layers and number of cycles. The rejection of NH(2)-terminated membranes follows the order of CaCl(2) > Na(2)SO(4) > NaCl, while the order for COOH-capped surface is Na(2)SO(4) > CaCl(2) > NaCl. The absolute value of zeta potential for the MLD membranes decreases with the addition of deposition layers. The moderate water flux for the resulting membrane is due to the reduced porosity of the support as well as the low roughness and hydrophilicity of the membrane surface. This bottom-up process provides a promising approach for construction of long-term steady NF membranes with nanoscale dimensions. PMID:23198774

  20. Universal Cluster Deposition System

    NASA Astrophysics Data System (ADS)

    Qiang, You; Sun, Zhiguang; Sellmyer, David J.

    2001-03-01

    We have developed a universal cluster deposition system (UCDS), which combines a new kind of sputtering-gas-aggregation (SGA) cluster beam source with two atom beams from magnetron sputtering. A highly intense, very stable beam of nanoclusters (like Co, Fe, Ni, Si, CoSm or CoPt) are produced. A quadrupole and/or a new high transmission infinite range mass selector have been designed for the cluster beam. The size distribution (Δd/d) is between 0.05+/-0.10, measured in situ by TOF. A range of mean cluster size is 2 to 10 nm. Usually the deposition rate is about 5 deg/s. The cluster concentration in the film is adjusted through the ratio of cluster and atomic beam deposition rates, as measured in situ with a rotatable quartz microbalance. The UCDS can be used to prepare coated clusters. After exiting from the cluster source, the clusters can be coated first with an atomic or molecular species in an evaporation chamber, and deposited alone or co-deposited with another material. This system is used to deposit simultaneously or alternately mesoscopic thin films or multilayers, and offers the possibility to control independently the incident cluster size and concentration, and thereby the interaction between clusters and cluster-matrix material which is of interest for fundamental research and industry applications. Magnetic properties of Co cluster-assembled materials will be discussed. * Research supported by NSF, DARPA through ARO, and CMRA

  1. On the magnetic properties of iron nanostructures fabricated via focused electron beam induced deposition and autocatalytic growth processes

    NASA Astrophysics Data System (ADS)

    Tu, F.; Drost, M.; Vollnhals, F.; Späth, A.; Carrasco, E.; Fink, R. H.; Marbach, H.

    2016-09-01

    We employ Electron beam induced deposition (EBID) in combination with autocatalytic growth (AG) processes to fabricate magnetic nanostructures with controllable shapes and thicknesses. Following this route, different Fe deposits were prepared on silicon nitride membranes under ultra-high vacuum conditions and studied by scanning electron microscopy (SEM) and scanning transmission x-ray microspectroscopy (STXM). The originally deposited Fe nanostructures are composed of pure iron, especially when fabricated via autocatalytic growth processes. Quantitative near-edge x-ray absorption fine structure (NEXAFS) spectroscopy was employed to derive information on the thickness dependent composition. X-ray magnetic circular dichroism (XMCD) in STXM was used to derive the magnetic properties of the EBID prepared structures. STXM and XMCD analysis evinces the existence of a thin iron oxide layer at the deposit–vacuum interface, which is formed during exposure to ambient conditions. We were able to extract magnetic hysteresis loops for individual deposits from XMCD micrographs with varying external magnetic field. Within the investigated thickness range (2–16 nm), the magnetic coercivity, as evaluated from the width of the hysteresis loops, increases with deposit thickness and reaches a maximum value of ∼160 Oe at around 10 nm. In summary, we present a viable technique to fabricate ferromagnetic nanostructures in a controllable way and gain detailed insight into their chemical and magnetic properties.

  2. Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

    NASA Technical Reports Server (NTRS)

    Levenson, L. L.; Stan, Mark A.; Bhasin, Kul B.

    1991-01-01

    ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need of post annealing processing. The substrates were rotated at 10 rotations per minute during the deposition which took place at a rate of about 3 to 4 nm. Films with areas up to 70 mm in diameter have been made by ICB deposition. These films, 100 nm thick, were deposited on SrTiO3 (100) substrates at 650 C in a mixture of six percent O3 in O2 at a total pressure of 4 x 10(exp -4) Torr. They had T(sub c) ranging from 84.3 K to 86.8 K over a 70 mm diameter and J(sub c) above 10(exp 6) A/sq cm at 77 K. X ray diffraction measurements of the three samples showed preferential c-axis orientation normal to the substrate surface. Scanning electron micrographs (SEM) of the three samples also show some texture dependence on sample position. For the three samples, there is a correlation between SEM texture, full width at half-maximum of rocking curves and J(sub c) versus temperature curves.

  3. Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al{sub 2}O{sub 3} by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Sobanska, Marta Klosek, Kamil; Borysiuk, Jolanta; Kret, Slawomir; Tchutchulasvili, Giorgi; Gieraltowska, Sylwia; Zytkiewicz, Zbigniew R.

    2014-01-28

    We report on plasma-assisted molecular beam epitaxial growth of GaN nanowires (NWs) on Si(111) substrates with a thin amorphous Al{sub 2}O{sub 3} buffer layer deposited by atomic layer deposition. Comparison of nucleation kinetics shows that presence of amorphous Al{sub 2}O{sub 3} buffer significantly enhances spontaneous nucleation of GaN NWs. Slower nucleation was observed on partially amorphous silicon nitride films. No growth of NWs was found on sapphire substrate under the same growth conditions which we explain by a low density of defects on monocrystalline substrate surface where NWs may nucleate. Our finding shows that tuning of substrate microstructure is an efficient tool to control rate of self-induced nucleation of GaN NWs.

  4. Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

    SciTech Connect

    Fuster, David; Rivera, Antonio; Alen, Benito; Alonso-Gonzalez, Pablo; Gonzalez, Yolanda; Gonzalez, Luisa

    2009-03-30

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4x2){r_reversible}(2x4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4x2) surface during the In deposition step and their subsequent crystallization under the As step.

  5. Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition.

    PubMed

    Kim, S; Russell, M; Henry, M; Kim, S S; Naik, R R; Voevodin, A A; Jang, S S; Tsukruk, V V; Fedorov, A G

    2015-09-28

    We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an "n-p-n" junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 10(18) e(-) per cm(2)). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 10(19) e(-) per cm(2) results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, "direct-write" functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. PMID:26302897

  6. Tunable diode lasers and their application in cold molecular beam spectroscopy

    SciTech Connect

    Sharpe, S.W.; Xu, S.; McDowell, R.; Blake, T.

    1996-12-31

    Supersonic molecular expansions provide a unique environment in which to acquire the infrared spectra of many molecular systems. Tunable diode lasers offer high spectral brightness, low noise, rapid tuning, and contiguous spectral coverage in the infrared, from 3,000 to 500 cm{sup {minus}1}. Molecular beams combined with tunable diode lasers represent a powerful tool for reducing or removing spectral congestion arising from both pressure broadening and rotational excitation. Depending on expansion conditions, rotational temperatures on the order of 10 K can be routinely obtained. With the appropriate pulsed slit nozzle (12 cm x 50 microns), Doppler broadening is reduced six-fold or more over that of room temperature, static cells. In addition, by employing modified White cell optics, effective optical path lengths of 3 meters can be realized. A description of Pacific Northwest National Laboratory`s beam-diode laser spectrometer will be given along with recent results for studies involving the fully rotationally resolved spectra of several molecules of atmospheric interest including chlorine nitrate and carbon tetrachloride.

  7. Simulation of the secondary electrons energy deposition produced by proton beams in PMMA: influence of the target electronic excitation description

    NASA Astrophysics Data System (ADS)

    Dapor, Maurizio; Abril, Isabel; de Vera, Pablo; Garcia-Molina, Rafael

    2015-06-01

    We have studied the radial dependence of the energy deposition of the secondary electron generated by swift proton beams incident with energies T = 50 keV-5 MeV on poly(methylmethacrylate) (PMMA). Two different approaches have been used to model the electronic excitation spectrum of PMMA through its energy loss function (ELF), namely the extended-Drude ELF and the Mermin ELF. The singly differential cross section and the total cross section for ionization, as well as the average energy of the generated secondary electrons, show sizeable differences at T ⩽ 0.1 MeV when evaluated with these two ELF models. In order to know the radial distribution around the proton track of the energy deposited by the cascade of secondary electrons, a simulation has been performed that follows the motion of the electrons through the target taking into account both the inelastic interactions (via electronic ionizations and excitations as well as electron-phonon and electron trapping by polaron creation) and the elastic interactions. The radial distribution of the energy deposited by the secondary electrons around the proton track shows notable differences between the simulations performed with the extended-Drude ELF or the Mermin ELF, being the former more spread out (and, therefore, less peaked) than the latter. The highest intensity and sharpness of the deposited energy distributions takes place for proton beams incident with T ~ 0.1-1 MeV. We have also studied the influence in the radial distribution of deposited energy of using a full energy distribution of secondary electrons generated by proton impact or using a single value (namely, the average value of the distribution); our results show that differences between both simulations become important for proton energies larger than ~0.1 MeV. The results presented in this work have potential applications in materials science, as well as hadron therapy (due to the use of PMMA as a tissue phantom) in order to properly consider the

  8. Energy deposition of H and He ion beams in hydroxyapatite films: A study with implications for ion-beam cancer therapy

    NASA Astrophysics Data System (ADS)

    Limandri, Silvina; de Vera, Pablo; Fadanelli, Raul C.; Nagamine, Luiz C. C. M.; Mello, Alexandre; Garcia-Molina, Rafael; Behar, Moni; Abril, Isabel

    2014-02-01

    Ion-beam cancer therapy is a promising technique to treat deep-seated tumors; however, for an accurate treatment planning, the energy deposition by the ions must be well known both in soft and hard human tissues. Although the energy loss of ions in water and other organic and biological materials is fairly well known, scarce information is available for the hard tissues (i.e., bone), for which the current stopping power information relies on the application of simple additivity rules to atomic data. Especially, more knowledge is needed for the main constituent of human bone, calcium hydroxyapatite (HAp), which constitutes 58% of its mass composition. In this work the energy loss of H and He ion beams in HAp films has been obtained experimentally. The experiments have been performed using the Rutherford backscattering technique in an energy range of 450-2000 keV for H and 400-5000 keV for He ions. These measurements are used as a benchmark for theoretical calculations (stopping power and mean excitation energy) based on the dielectric formalism together with the MELF-GOS (Mermin energy loss function-generalized oscillator strength) method to describe the electronic excitation spectrum of HAp. The stopping power calculations are in good agreement with the experiments. Even though these experimental data are obtained for low projectile energies compared with the ones used in hadron therapy, they validate the mean excitation energy obtained theoretically, which is the fundamental quantity to accurately assess energy deposition and depth-dose curves of ion beams at clinically relevant high energies. The effect of the mean excitation energy choice on the depth-dose profile is discussed on the basis of detailed simulations. Finally, implications of the present work on the energy loss of charged particles in human cortical bone are remarked.

  9. Energy spreading and angular distribution of a beam of electrons in molecular hydrogen

    NASA Technical Reports Server (NTRS)

    Heaps, M. G.; Green, A. E. S.

    1975-01-01

    A Monte Carlo approach is used to obtain the energy spreading and angular distribution of initially monoenergetic and monodirectional beams of electron incident on a gas of molecular hydrogen. Several beams of primary electrons and the resultant secondaries are degraded in a step-by-step procedure which utilizes a detailed set of cross sections, together with reasonable approximations for the creation of secondary electrons. Particular attention is paid to the initial angular distribution of secondary electrons. An analytic function which characterizes current experimental differential cross-section data is used to provide realistic inputs into our calculations. The results for energy distribution as a function of distance and angular distribution at selected energies and distances are illustrated.

  10. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  11. Nanoscale assembly for molecular electronics and in situ characterization during atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Na, Jeong-Seok

    The work in this dissertation consists of a two-part study concerning molecular-based electronics and atomic layer deposition (ALD). As conventional "top-down" silicon-based technology approaches its expected physical and technical limits, researchers have paid considerable attention to "bottom-up" approaches including molecular-based electronics that self assembles molecular components and ALD techniques that deposit thin films with atomic layer control. Reliable fabrication of molecular-based devices and a lack of understanding of the conduction mechanisms through individual molecules still remain critical issues in molecular-based electronics. Nanoparticle/molecule(s)/nanoparticle assemblies of "dimers" and "trimers", consisting of two and three nanoparticles bridged by oligomeric ethynylene phenylene molecules (OPEs), respectively, are successfully synthesized by coworkers and applied to contact nanogap electrodes (< 70 nm) fabricated by an angled metal evaporation technique. We demonstrate successful trapping of nanoparticle dimers across nanogap electrodes by dielectrophoresis at 2 VAC, 1 MHz, and 60 s. The structures can be maintained electrically connected for long periods of time, enabling time- and temperature-dependent current-voltage (I-V) characterization. Conduction mechanisms through independent molecules are investigated by temperature dependent I-V measurements. An Arrhenius plot of log (I) versus 1/T exhibits a change of slope at ˜1.5 V, indicating the transition from direct tunneling to Fowler-Nordheim tunneling. Monitoring of the conductance is also performed in real-time during trapping as well as during other modification and exposure sequences after trapping over short-term and long-term time scales. The real-time monitoring of conductance through dimer structures during trapping offers immediate detection of a specific fault which is ascribed to a loss of active molecules and fusing of the nanoparticles in the junction occurring mostly at a

  12. Molecular beam mass spectrometry with tunable vacuum ultraviolet (VUV) synchrotron radiation

    SciTech Connect

    Golan, Amir; Ahmed, Musahid

    2012-01-01

    Tunable soft ionization coupled to mass spectroscopy is a powerful method to investigate isolated molecules, complexes and clusters and their spectroscopy and dynamics.[1-4] Fundamental studies of photoionization processes of biomolecules provide information about electronic structure of these systems. Furthermore determinations of ionization energies and other properties of biomolecules in the gas phase are not trivial, and these experiments provide a platform to generate these data. We have developed a thermal vaporization technique coupled with supersonic molecular beams that provides a gentle way to transport these species into the gas phase. Judicious combination of source gas and temperature allows for formation of dimers and higher clusters of the DNA bases. The focus of this particular work is on the effects of non-covalent interactions, i.e., hydrogen bonding, stacking, and electrostatic interactions, on the ionization energies and proton transfer of individual biomolecules, their complexes and upon micro-hydration by water.[1, 5-9] We have performed experimental and theoretical characterization of the photoionization dynamics of gas-phase uracil and 1,3-methyluracil dimers using molecular beams coupled with synchrotron radiation at the Chemical Dynamics Beamline[10] located at the Advanced Light Source and the experimental details are visualized here. This allowed us to observe the proton transfer in 1,3-dimethyluracil dimers, a system with pi stacking geometry and with no hydrogen bonds[1]. Molecular beams provide a very convenient and efficient way to isolate the sample of interest from environmental perturbations which in return allows accurate comparison with electronic structure calculations[11, 12]. By tuning the photon energy from the synchrotron, a photoionization efficiency (PIE) curve can be plotted which informs us about the cationic electronic states. These values can then be compared to theoretical models and calculations and in turn, explain

  13. Molecular beams studies of the energetics and dynamics of elementary chemical reactions

    SciTech Connect

    Hayden, C.C.

    1982-05-01

    Quantum mechanical effects on the angular distribution of HF products from the F + H/sub 2/ reaction were studied using crossed atomic and molecular beams with a rotatable mass spectrometer detector and time-of-flight velocity analysis. Measurement of the singlet-triplet splitting of CH/sub 2/ from the recoil velocities of fragments from ketene photodissociation in a molecular beam is also reported. Partial center-of-mass angular distributions, and velocity flux contour maps have been derived for individual vibrational states of the HF product from the F + H/sub 2/ reaction at collision energies of 2 and 3 kcal/mole. The center-of-mass distributions were obtained by analysis of laboratory angular and time-of-flight measurements of the reactive scattering. The results are consistent with recent three dimensional quantum mechanical scattering calculations, which predict that resonance effects should appear in the product angular distributions in this energy range. The photofragmentation of ketene in a molecular beam was used to measure the singlet-triplet splitting in CH/sub 2/. A rare gas halide excimer laser operating at 351 nm (XeF) and 308 nm (XeCl) dissociated the ketene. Time-of-flight measurements of the fragment velocities allowed determination of the energetics of the dissociation. The /sup 1/A/sub 1/ - /sup 3/B/sub 1/ splitting in CH/sub 2/ was found to be 8.5 +- 0.8 kcal/mole. This agrees with many experimental results, but not with the value of 19.5 kcal/mole derived from recent photodetachment experiments on CH/sub 2//sup -/.

  14. Reaction Mechanism of Oxygen Atoms with Unsaturated Hydrocarbons by the Crossed-Molecular-Beams Method

    DOE R&D Accomplishments Database

    Buss, R. J.; Baseman, R. J.; Guozhong, H.; Lee, Y. T.

    1982-04-01

    From a series of studies of the reaction of oxygen atoms with unsaturated hydrocarbons using the crossed molecular beam method, the dominant reaction mechanisms were found to be the simple substitution reactions with oxygen atoms replacing H, Cl, Br atom or alkyl groups. Complication due to secondary reaction was avoided by carrying out experiments under single collisions and observing primary products directly. Primary products were identified by measuring the angular and velocity distributions of products at all the mass numbers which could be detected by the mass spectrometer, and from comparison of these distributions, applying the requirement of energy and momentum conservation.

  15. Note: A versatile mass spectrometer chamber for molecular beam and temperature programmed desorption experiments

    NASA Astrophysics Data System (ADS)

    Tonks, James P.; Galloway, Ewan C.; King, Martin O.; Kerherve, Gwilherm; Watts, John F.

    2016-08-01

    A dual purpose mass spectrometer chamber capable of performing molecular beam scattering (MBS) and temperature programmed desorption (TPD) is detailed. Two simple features of this design allow it to perform these techniques. First, the diameter of entrance aperture to the mass spectrometer can be varied to maximize signal for TPD or to maximize angular resolution for MBS. Second, the mass spectrometer chamber can be radially translated so that it can be positioned close to the sample to maximize signal or far from the sample to maximize angular resolution. The performance of this system is described and compares well with systems designed for only one of these techniques.

  16. Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Lo, Ikai; Pang, Wen-Yuan; Hsu, Yu-Chi; Hsieh, Chia-Ho; Shih, Cheng-Hung; Chou, Mitch M. C.; Chen, Wen-Yen; Hsu, Tzu-Min; Hsu, Gary Z. L.

    2013-06-15

    The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO{sub 2} substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices.

  17. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gong, Q.; Liang, J. B.; Xu, B.; Ding, D.; Li, H. X.; Jiang, C.; Zhou, W.; Liu, F. Q.; Wang, Z. G.; Qiu, X. H.; Shang, G. Y.; Bai, C. L.

    1998-09-01

    Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value from the real value of the base width of InAs islands.

  18. Luminescence characterization of CdTe:In grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bassani, F.; Tatarenko, S.; Saminadayar, K.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

    1991-06-01

    We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm-3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.

  19. Growth of GaN with warm ammonia by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kawaharazuka, A.; Yoshizaki, T.; Ploog, K. H.; Horikoshi, Y.

    2009-03-01

    We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2* generated by cracking ammonia molecule.

  20. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Masahiro; Murata, Satoshi; Chayahara, Akiyoshi; Horino, Yuji; Saraie, Junji; Oe, Kunishige

    2003-10-01

    GaAs1-xBix has been grown at a substrate temperature (Tsub) between 350 and 410°C by molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by Rutherford backscattering spectroscopy and the lattice constant showed good linearity. To achieve Bi incorporation into the epilayer, As flux was adjusted in a limited range on the brink of As shortage on the growing surface. The Bi incorporation was saturated at a large Bi flux, probably due to a low miscibility of Bi with GaAs. The value of x increased up to 4.5% with decreasing Tsub to 350°C.