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Sample records for monolithic silicon optoelectronic

  1. Silicon-based optoelectronics: Monolithic integration for WDM

    NASA Astrophysics Data System (ADS)

    Pearson, Matthew Richard T.

    2000-10-01

    This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits

  2. Organic Light-Emitting Diodes and Silicon Receivers for Monolithic Silicon Opto-Electronic Circuits.

    NASA Astrophysics Data System (ADS)

    Kim, Helen Haeran

    Power dissipation in electrical connections is an obstacle to achieving higher system performance; optical connections may be a solution. Our calculations highlight those situations where optical connections would be advantageous, compared to the electrical connections, based on the calculation of energy required to implement these connections. Based on today's technology, which unfortunately have a significant conversion loss between electronics and optics, optical connections have this advantage only over distances longer than {~}10 cm. Thus, optical connection may have near to middle term advantages for inter-chip connection. A highly desirable feature is to monolithically integrate opto-electronic components with chips in order to reduce both cost and energy dissipation. Because the overwhelming majority of very large scale integrated circuits are based on silicon (Si) technology, the transmitter and receiver should be process-compatible with Si technology. Unfortunately, Si is not an efficient light emitter. Because of their simple and ultimately inexpensive, Si-compatible processing, we selected semiconducting organic materials as light emitting materials. Based on our monolithically integrated Si receiver, we estimated the requirements of organic light emitting diodes (LEDs) for their efficiency and speed. Having learned the material properties of the organic materials and their device characteristics, we applied the organic LEDs on Si and enhanced the efficiency by using a silicon dioxide intermediate layer. This is the first report of organic LEDs fabricated on Si. In addition, the process is compatible with Si ICs. Although a large improvement has been made to achieve a higher LED efficiency, the speed of the organic LEDs is only in the MHz range. Much effort is needed to increase the mobility of these materials for their use in optical interconnects.

  3. All-silicon monolithic optoelectronic platform for multi-analyte biochemical sensing

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Makarona, E.; Raptis, I.; Salapatas, A.; Psarouli, A.; Kakabakos, S.; Petrou, P.; Hoekman, M.; Heideman, R.; Stoffer, R.; Tukkiniemi, K.; Soppanen, M.; Jobst, G.; Nounessis, G.; Budkowski, A.; Rysz, J.

    2013-05-01

    Despite the advances in optical biosensors, the existing technological approaches still face two major challenges: the inherent inability of most sensors to integrate the optical source in the transducer chip, and the need to specifically design the optical transducer per application. In this work, the development of a radical optoelectronic platform is demonstrated based on a monolithic optocoupler array fabricated by standard Si-technology and suitable for multi-analyte detection. The platform has been specifically designed biochemical sensing. In the all-silicon array of transducers, each optocoupler has its own excitation source, while the entire array share a common detector. The light emitting devices (LEDs) are silicon avalanche diodes biased beyond their breakdown voltage and emit in the VIS-NIR part of the spectrum. The LEDs are coupled to individually functionalized optical transducers that converge to a single detector for multiplexed operation. The integrated nature of the basic biosensor scheme and the ability to functionalize each transducer independently allows for the development of miniaturized optical transducers tailored towards multi-analyte tests. The monolithic arrays can be used for a plethora of bio/chemical interactions becoming thus a versatile analytical tool. The platform has been successfully applied in bioassays and binding in a real-time and label-free format and is currently being applied to ultra-sensitive food safety applications.

  4. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  5. Monolithic silicon interferometric optoelectronic devices for label-free multi-analyte biosensing applications

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Makarona, E.; Raptis, I.; Salapatas, A.; Psarouli, A.; Kakabakos, S.; Petrou, P.; Hoekman, M.; Stoffer, R.; Tukkiniemi, K.; Jobst, G.

    2013-02-01

    Miniaturized bioanalytical devices find wide applications ranging from blood tests to environmental monitoring. Such devices in the form of hand held personal laboratories can transform point-of-care monitoring provided miniaturization, multianalyte detection and sensitivity issues are successfully resolved. Optical detection in biosensors is superior in many respects to other types of sensing based on alternative signal transduction techniques, especially when both sensitivity and label free detection is sought. The main drawback of optical biosensing transducers relates to the unresolved manufacturability issues encountered when attempting monolithic integration of the light source. If the mature silicon processing technology could be used to monolithically integrate optical components, including light emitting devices, into complete photonic sensors, then the lab on a chip concept would materialize into a robust and affordable way. Here, we describe and demonstrate a bioanalytical device consisting of a monolithic silicon optocoupler properly engineered as a planar interferometric microchip. The optical microchip monolithically integrates silicon light emitting diodes and detectors optically coupled through silicon nitride waveguides designed to form Mach-Zehnder interferometers. Label free detection of proteins is demonstrated down to pM sensitivities.

  6. A bioanalytical microsystem for protein and DNA sensing based on a monolithic silicon optoelectronic transducer

    NASA Astrophysics Data System (ADS)

    Misiakos, K.; Petrou, P. S.; Kakabakos, S. E.; Ruf, H. H.; Ehrentreich-Förster, E.; Bier, F. F.

    2005-01-01

    A bioanalytical microsystem that is based on a monolithic silicon optical transducer and a microfluidic module and it is appropriate for real-time sensing of either DNA or protein analytes is presented. The optical transducer monolithically integrates silicon avalanche diodes as light sources, silicon nitride optical fibers and detectors and efficiently intercouples these optical elements through a self-alignment technique. After hydrophilization and silanization of the transducer surface, the biomolecular probes are immobilized through physical adsorption. Detection is performed through reaction of the immobilized biomolecules with gold nanoparticle labeled counterpart molecules. The binding of these molecules within the evanescent field at the surface of the optical fiber cause attenuated total reflection of the waveguided modes and reduction of the detector photocurrent. Using the developed microsystem, determination of single nucleotide polymorphism (SNP) in the gene of the human phenol sulfotransferase SULT1A1 was achieved. Full-matching hybrid resulted in 4-5 times higher signals compared to the mismatched hybrid after hybridization and dissociation processes. The protein sensing abilities of the developed microsystem were also investigated through a non-competitive assay for the determination of the MB isoform of creatine kinase enzyme (CK-MB) that is a widely used cardiac marker.

  7. Optoelectronic devices toward monolithic integration

    NASA Astrophysics Data System (ADS)

    Ghergia, V.

    1992-12-01

    Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

  8. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  9. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  10. Silicon photomultiplier-based optoelectronic mixing

    NASA Astrophysics Data System (ADS)

    Yishuo, Song; Xiaoping, Du; Zhaoyang, Zeng; Shengjun, Wang

    2013-09-01

    Silicon photomultiplier (SiPM)-based optoelectronic mixing (OEM) is studied for the first time. The validity of SiPM-based OEM is experimentally verified. Compared with the avalanche photodiodes-based OEM, the SiPM-based OEM is less noisy and easy to realize for its low voltage operation and high responsivity.

  11. A silicon microbench concept for optoelectronic packaging

    SciTech Connect

    Pocha, M.D.; Strand, O.T.; Kerns, J.A.

    1996-06-24

    Optoelectronics (o/e) is currently too expensive for widespread application. We believe that the packaging (or fiber pigtailing) process must be automated to realize a significant reduction in the cost of o.e packages. We are addressing issues of automating the fiber pigtailing process on silicon waferboards or microbenches. This paper focuses on reflowing solders for the attachment of o/e components. We have recently developed miniature polysilicon heaters which are integrated on silicon microbenches. These miniature heaters avoid the problem of raising the entire microbench to the solder melting point to attach components. Most importantly, these miniature heaters are completely compatible with automating the attachment process. Designing silicon microbenches with on-board heaters requires some care. The thermal properties of the microbench itself along with all coatings and any heatsinking materials must be understood. The heaters must operate in a current and voltage regime compatible with the overall characteristics of the o.e package. Inadvertently reflowing solder in unanticipated locations may occur unless the thermal behavior of the microbench thoroughly known. This paper describes the design and fabrication of our microbenches and an experimental and theoretical study on these silicon microbenches which gives a complete picture of their thermal behavior.

  12. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  13. Strength and toughness of monolithic and composite silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.

    1990-01-01

    The strength and toughness of two composite and two monolithic silicon nitrides were measured from 25 to 1400 C. The monolithic and composite materials were made from similar starting powders. Both of the composite materials contained 30 vol percent silicon carbide whiskers. All measurements were made by four point flexure in surrounding air and humidity. The composite and monolithic materials exhibited similar fast fracture properties as a function of temperature.

  14. Monolithic active-passive 16 × 16 optoelectronic switch.

    PubMed

    Stabile, R; Albores-Mejia, A; Williams, K A

    2012-11-15

    We present what is to our knowledge the first active-passive monolithically integrated 16×16 switch. The active InP/InGaAsP elements provide semiconductor optical amplifier gates in a multistage rearrangeably nonblocking switch design. Thirty-two representative connections, including the shortest, longest, and comprehensive range of intermediate paths have been assessed across the switch circuit. The 10 Gb/s signal routing is demonstrated with an optical signal-to-noise ratio up to 28.3 dB/0.1 nm and a signal extinction ratio exceeding 50 dB. PMID:23164873

  15. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    Photonics, a blending of optics and electronics, has emerged as one of the world's most rapidly developing fields. Along with microelectronics, they constitute the core technologies of the information industry, and their advances are complementing each other in the tasks of the acquisition, transmission, storage, and processing of increasing amounts of information. Microelectronic device integration has progressed to the point that complete "systems-on-the-chip" have been realized. Photonic materials need to be integrated with standard electronic circuits for the implementation of the next generation optoelectronic "super-chip" where both electrons and photons participate in the transmission and processing of information. Silicon is the cornerstone material in conventional VLSI systems. However, having a relatively small and indirect fundamental energy band-gap, silicon is an inefficient lightemitter. On the other hand, direct integration of III-V photonic materials on a silicon chip is still very problematic. Squeezing light out of silicon itself appears to be an attractive alternative. Light emission from silicon is an important fundamental issue with enormous technological implications. In this work we explore several strategies towards developing silicon based optoelectronic devices. Porous silicon, a material produced by electrochemically etching silicon in aqueous hydrofluoric acid solutions, generated great interest in the early 1990s when it was shown to exhibit relatively bright, room temperature, visible photoluminescence. However, having a poor surface morphology, the material is fragile and chemically unstable leading to degradation of light emission and preventing integration with silicon processing technology. With the development of the epitaxially grown crystalline-Si/O superlattice, we attempt to overcome the morphological problems of porous silicon, retaining its light emission characteristics. Our multilayer c-Si/O device consists of thin silicon

  16. Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

    NASA Astrophysics Data System (ADS)

    Recht, Daniel

    This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

  17. Integration of InP-based optoelectronics with silicon waveguides

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Kapulainen, Markku; Ylinen, Sami; Ollila, Jyrki; Vilokkinen, Ville; Mörl, Ludwig; Möhrle, Martin; Hamelin, Régis

    2009-02-01

    Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

  18. Laser hyperdoping silicon for enhanced infrared optoelectronic properties

    NASA Astrophysics Data System (ADS)

    Warrender, Jeffrey M.

    2016-09-01

    Pulsed laser melting and rapid solidification have attracted interest for decades as a method to achieve impurity concentrations in silicon orders of magnitude above the equilibrium solubility limit. The incorporation of sulfur into silicon using this technique led to the observation of strong broadband infrared absorption in the resulting material. This observation, combined with interest in impurity band optoelectronic device concepts, has resulted in renewed interest in laser techniques for achieving high impurity concentrations. In this paper, I review the literature that led to the present understanding of laser hyperdoping and provide a summary of the optical and optoelectronic measurements made on sulfur hyperdoped silicon to date. I mention recent work exploring transition metal impurities and discuss how considerations discovered in early solidification and later rapid solidification work inform our approaches to kinetically trapping such impurities. I also provide a simplified picture of how a laser hyperdoping process is typically carried out, as an entry point for an experimentalist seeking to fabricate such layers.

  19. Monolithic pixel detectors in silicon on insulator technology

    NASA Astrophysics Data System (ADS)

    Bisello, Dario

    2013-05-01

    Silicon On Insulator (SOI) is becoming an attractive technology to fabricate monolithic pixel detectors. The possibility of using the depleted resistive substrate as a drift collection volume and to connect it by means of vias through the buried oxide to the pixel electronic makes this kind of approach interesting both for particle and photon detection. In this paper I report the results obtained in the development of monolithic pixel detectors in an SOI technology by a collaboration between groups from the University and INFN of Padova (Italy) and the LBNL and the SCIPP at UCSC (USA).

  20. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    PubMed

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects. PMID:26618638

  1. Assessment of goat milk adulteration with a label-free monolithically integrated optoelectronic biosensor.

    PubMed

    Angelopoulou, Μichailia; Botsialas, Athanasios; Salapatas, Alexandros; Petrou, Panagiota S; Haasnoot, Willem; Makarona, Eleni; Jobst, Gerhard; Goustouridis, Dimitrios; Siafaka-Kapadai, Athanasia; Raptis, Ioannis; Misiakos, Konstantinos; Kakabakos, Sotirios E

    2015-05-01

    The label-free detection of bovine milk in goat milk through a miniaturized optical biosensor is presented. The biosensor consists of ten planar silicon nitride waveguide Broad-Band Mach-Zehnder interferometers (BB-MZIs) monolithically integrated and self-aligned with their respective silicon LEDs on the same Si chip. The BB-MZIs were transformed to biosensing transducers by functionalizing their sensing arm with bovine k-casein. Measurements were performed by continuously recording the transmission spectra of each interferometer through an external spectrometer. The amount of bovine milk in goat milk was determined through a competitive immunoassay by passing over the sensor mixtures of anti-k-casein antibodies with the calibrators or the samples. The output spectra of each BB-MZI recorded during the reaction were subjected to Discrete Fourier Transform in order to convert the observed spectral shifts to phase shifts in the wavenumber domain. The method had a detection limit of 0.04 % (v/v) bovine milk in goat milk, dynamic range 0.1-1.0 % (v/v), recoveries 93-110 %, and intra- and inter-assay coefficients of variation less than 12 and 15 %, respectively. The proposed biosensor compared well in terms of analytical performance with a competitive ELISA developed using the same monoclonal antibodies. Nevertheless, the duration of the biosensor assay was 10 min whereas the ELISA required 2 h. Thus, the fast and sensitive determinations along with the small size of the sensor make it ideal for incorporation into portable devices for assessment of goat or ewe's milk adulteration with bovine milk at the point-of-need. PMID:25796524

  2. Ultracompact 100 Gbps coherent receiver monolithically integrated on silicon

    NASA Astrophysics Data System (ADS)

    Tu, Zhijuan; Gong, Pan; Zhou, Zhiping; Wang, Xingjun

    2016-04-01

    This work describes an ultracompact coherent receiver monolithically integrated on silicon. The coherent receiver integrates one 1D grating coupler, one 2D grating coupler, two 90° hybrids, and eight Ge photodetectors in an area of only 1.3 × 1.4 mm2, which is about half the size of the smallest previously reported receiver. The design and performances of the components and the integrated coherent receiver are presented. The receiving of 100 Gbps polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) signals is also successfully demonstrated.

  3. Novel silicon cap package technology for monolithic microinertial measurement unit

    NASA Astrophysics Data System (ADS)

    Li, Zhihong; Zhang, Dacheng; Hao, Yilong; Li, Ting; Wang, Ying; Wu, Guoying

    2000-06-01

    A monolithic micromachined inertial measurement unit (IMU), which combines three-degree-of-freedom gyroscope and a three-degree-of-freedom accelerometer, is attractive for navigation and guidance. A micromachined gyroscope generally works in a vacuum package to archive a high resolution. By contraries, a package of an accelerometer should provide proper dumping to optimize dynamic response. It is very difficult to fulfill two different package demands in one chip by using conventional package technology. We developed wafer-level silicon cap package technology to solve the problem. The gyroscope is completely sealed in a vacuum silicon cavity by anodic bonding in vacuum. The accelerometer is package din another silicon cavity, but different from the gyroscope, a 'bypass hole' is fabricated in the wall of the cavity. Using this technique, the accelerometer can operate in an air ambient, the damping is controlled by optimizing structure design of accelerometer and change the size of the bypass hole. Consequently, demands of package for both accelerometer and gyroscope are fulfilled. Besides, the silicon cap can protect fragile mechanical structures during post-releasing processing, such as dicing, mounting and wire bonding. Consequently, after the silicon cap is formed, the MEMS wafer can be treated as a common IC wafer. These structures were fabricated with wafer bonding and ICP deep etching technologies, but can be also fabricated by other micromachining technologies.

  4. Initial results for the silicon monolithically interconnected solar cell product

    NASA Astrophysics Data System (ADS)

    Dinetta, L. C.; Shreve, K. P.; Cotter, J. E.; Barnett, A. M.

    1995-10-01

    This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

  5. Initial results for the silicon monolithically interconnected solar cell product

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Shreve, K. P.; Cotter, J. E.; Barnett, A. M.

    1995-01-01

    This proprietary technology is based on AstroPower's electrostatic bonding and innovative silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and then thinned to final thicknesses less than 25 micron. These devices are based on the features of a thin, light-trapping silicon solar cell: high voltage, high current, light weight (high specific power) and high radiation resistance. Monolithic interconnection allows the fabrication costs on a per watt basis to be roughly independent of the array size, power or voltage, therefore, the cost effectiveness to manufacture solar cell arrays with output powers ranging from milliwatts up to four watts and output voltages ranging from 5 to 500 volts will be similar. This compares favorably to conventionally manufactured, commercial solar cell arrays, where handling of small parts is very labor intensive and costly. In this way, a wide variety of product specifications can be met using the same fabrication techniques. Prototype solar cells have demonstrated efficiencies greater than 11%. An open-circuit voltage of 5.4 volts, fill factor of 65%, and short-circuit current density of 28 mA/sq cm at AM1.5 illumination are typical. Future efforts are being directed to optimization of the solar cell operating characteristics as well as production processing. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. These features make this proprietary technology an excellent candidate for a large number of consumer products.

  6. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect

    Grimmer, D.P. )

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  7. Monolithic nonlinear pulse compressor on a silicon chip.

    PubMed

    Tan, Dawn T H; Sun, Pang C; Fainman, Yeshaiahu

    2010-01-01

    Projected demands in information bandwidth have resulted in a paradigm shift from electrical to optical interconnects. Switches, modulators and wavelength converters have all been demonstrated on complementary metal-oxide semiconductor compatible platforms, and are important for all optical signal and information processing. Similarly, pulse compression is crucial for creating short pulses necessary for key applications in high-capacity communications, imaging and spectroscopy. In this study, we report the first demonstration of a chip-scale, nanophotonic pulse compressor on silicon, operating by nonlinear spectral broadening from self-phase modulation in a nanowire waveguide, followed by temporal compression with an integrated dispersive element. Using a low input peak power of 10 W, we achieve compression factors as high as 7 for 7 ps pulses. This compact and efficient device will enable ultrashort pulse sources to be integrated with systems level photonic circuits necessary for future optoelectronic networks. PMID:21081914

  8. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hongda, Chen; Zan, Zhang; Beiju, Huang; Luhong, Mao; Zanyun, Zhang

    2015-12-01

    Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems. Project supported by the National Basic Research Program of China (No. 2011CBA00608), the National Natural Science Foundation of China (Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China (Nos. 2013AA013602, 2013AA031903, 2013AA032204).

  9. Silicon microbench heater elements for packaging opto-electronic devices

    SciTech Connect

    Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

    1995-09-01

    Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

  10. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  11. Development of large-area monolithically integrated silicon-film photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Rand, J. A.; Cotter, J. E.; Ingram, A. E.; Ruffins, T. R.; Shreve, K. P.; Hall, R. B.; Barnett, A. M.

    1993-06-01

    This report describes work to develop Silicon-Film (trademark) Product 3 into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product 3 structure is a thin (less than 100 micron) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200 sq cm, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 sq cm monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R(sub s) effects. Test data for a nine-cell device (16 sq cm) indicated a V(sub oc) of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (less than 0.1 mA/sq cm) due to limited conduction through the ceramic and no process-related metallization shunts.

  12. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties.

    PubMed

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~10(4) cm/V · s) at room temperature and a low mass density (1.71 g/cm(3)), making it a promising material for optoelectronic applications. PMID:26395926

  13. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-09-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

  14. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

    PubMed Central

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2015-01-01

    Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications. PMID:26395926

  15. Comparison of Structural and Optoelectronic Properties of N-Type Microcrystalline Silicon and Silicon Oxide Films with Lowering of Thickness

    NASA Astrophysics Data System (ADS)

    Banerjee, Chandan; Sarker, Arindam; Barua, Asok K.

    2002-08-01

    We have compared the structural and optoelectronic properties of n-type microcrystalline hydrogenated silicon oxide (n-μc-SiO:H) and n-type microcrystalline hydrogenated silicon (n-μc-Si:H) films with lowering of thickness, prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD, 13.56 MHz) method. At thickness ≤ 300 Å, the n-μc-SiO:H film has higher optical gap (E05) and lower optical absorption while retaining the photoconductivity (σph) and activation energy (Ea) similar to those for n-μc-Si:H film. Due to these advantages of n-μc-SiO:H film over that of n-μc-Si:H at low thickness this material has potential for use in improving the performance of single and double junction amorphous silicon solar cells.

  16. Light coupling between vertical III-As nanowires and planar Si photonic waveguides for the monolithic integration of active optoelectronic devices on a Si platform.

    PubMed

    Giuntoni, Ivano; Geelhaar, Lutz; Bruns, Jürgen; Riechert, Henning

    2016-08-01

    We present a new concept for the optical interfacing between vertical III-As nanowires and planar Si waveguides. The nanowires are arranged in a two-dimensional array which forms a grating structure on top of the waveguide. This grating enables light coupling in both directions between the components made from the two different material classes. Numerical simulations show that this concept permits a light extraction efficiency from the waveguide larger than 45% and a light insertion efficiency larger than 35%. This new approach would allow the monolithic integration of nanowire-based active optoelectronics devices, like photodetectors and light sources, on the Si photonics platform. PMID:27505805

  17. Integration and packaging of optoelectronic devices; Proceedings of the Meeting, Cambridge, MA, Sept. 18, 19, 1986

    NASA Astrophysics Data System (ADS)

    Hartman, Davis H.; Holman, Robert L.; Skinner, Doyle P.

    Papers are presented on the dynamic alignment of small optical components; an optical alignment robot system; a reliable package for hermetic encapsulation of InGaAsP edge-emitting LEDs; fiber-waveguide inteconnecting technology; a packaging technique to achieve stable single-mode fiber-to-laser alignment; lenses for high efficiency coupling of laser diodes to a single-mode fiber; and the application of glass transition temperature on epoxy resin to fiber optics. Monolithic optoelectronic circuits for high speed optical interconnections; monolithically integrated pin/FET receiver technology; optical interconnections based on multichip integration; and photoneural device structures are examined. Consideration is given to multiple quantum well devices for monolithically integrated optoelectronics; optical waveguides and suface emitters in III-V semiconductors; optical signal interconnection between GaAs integrated circuit chips; the monolithic integration of Si and GaAs devices; channelized optical waveguides on silicon; and black, patternable polyimide coating for monolithic optoelectronic applications.

  18. Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

    NASA Technical Reports Server (NTRS)

    Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

    1991-01-01

    The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

  19. Nanophotonics for Optoelectronic Devices: Extrinsic Silicon Photonic Receivers and Organic Photovoltaics

    NASA Astrophysics Data System (ADS)

    Grote, Richard R.

    The demand for high data rate communications and renewable energy sources has led to new materials and platforms for optoelectronic devices, which require nanometer scale feature sizes. Devices that operate in the visible and near-infrared commonly have active areas with dimensions on the order of the diffraction limit ( l2n , where lambda is the free space wavelength and n is the index of refraction), for which the ray optics modeling techniques and bulk focusing optics traditionally used in optoelectronic device design are no longer applicable. In this subwavelength regime, nanophotonic light-trapping strategies are required to localize electromagnetic fields in the active area. This dissertation details the application of nanophotonics to two optoelectronic systems: extrinsic photodetectors for silicon photonics and light-trapping in organic photovoltaics. Error-free reception of 10 Gb/s data at lambda = 1.55 mum is demonstrated with a Si+ ion-implanted silicon waveguide photodiode. To mitigate the relatively small absorption coefficient of ion-implanted silicon, resonant cavity enhancement using in-line Fabry-Perot and 1D photonic crystal cavities, as well as slow light enhancement using a coupled resonator optical waveguide are discussed. The extension of these photodiodes to the mid-infrared is demonstrated using Zn+ implantation to detect over a range of lambda = 2.2-2.4 mum, and a new method for modulation and switching in integrated optics by using interference in a resonant cavity, termed coherent perfect loss (CPL), is presented. Finally, the upper limit of nanophotonic light trapping is derived for organic photovoltaics with material anisotropy included.

  20. Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

    PubMed

    Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

    2016-03-01

    Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links. PMID:26901448

  1. Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hirsch, Jens; Gaudig, Maria; Bernhard, Norbert; Lausch, Dominik

    2016-06-01

    The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF6 and O2 are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 1015 cm-3 minority carrier density (MCD) after an atomic layer deposition (ALD) with Al2O3. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique to substitute the industrial state of the art wet chemical textures in the solar cell mass production.

  2. Monolithic amorphous silicon modules on continuous polymer substrates

    NASA Astrophysics Data System (ADS)

    Braymen, S.; Grimmer, D.; Jeffrey, F.; Martens, S.; Noack, M.; Scandrett, B.; Thomas, M.

    1999-03-01

    Iowa Thin Film Technologies is engaged in a 3 year contract under the PVMaT program to reduce manufacturing costs by 63%. The first two years of the project greatly improved throughput of the front end process steps which include the vacuum deposition steps and the monolithic integration process. During the third year, roll based processing is being extended through the back end of the line. This part of the process which includes busbar placement, lamination, and cutting had previously required hand work on discrete modules. An overall manufacturing cost reduction of 53% has been achieved to date.

  3. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    PubMed

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform. PMID:26193560

  4. Towards monolithic integration of germanium light sources on silicon chips

    NASA Astrophysics Data System (ADS)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  5. Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm(2).

    PubMed

    Werner, Jérémie; Weng, Ching-Hsun; Walter, Arnaud; Fesquet, Luc; Seif, Johannes Peter; De Wolf, Stefaan; Niesen, Bjoern; Ballif, Christophe

    2016-01-01

    Monolithic perovskite/crystalline silicon tandem solar cells hold great promise for further performance improvement of well-established silicon photovoltaics; however, monolithic tandem integration is challenging, evidenced by the modest performances and small-area devices reported so far. Here we present first a low-temperature process for semitransparent perovskite solar cells, yielding efficiencies of up to 14.5%. Then, we implement this process to fabricate monolithic perovskite/silicon heterojunction tandem solar cells yielding efficiencies of up to 21.2 and 19.2% for cell areas of 0.17 and 1.22 cm(2), respectively. Both efficiencies are well above those of the involved subcells. These single-junction perovskite and tandem solar cells are hysteresis-free and demonstrate steady performance under maximum power point tracking for several minutes. Finally, we present the effects of varying the intermediate recombination layer and hole transport layer thicknesses on tandem cell photocurrent generation, experimentally and by transfer matrix simulations. PMID:26687850

  6. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  7. Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects

    PubMed Central

    Li, Ning; Liu, Ke; Sorger, Volker J.; Sadana, Devendra K.

    2015-01-01

    Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III–V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III–V plasmonic light sources can be directly grown on Si substrates free of crystallographic defects due to the submicron cavity footprint (250 nm × 250 nm) being smaller than the average defect free region size of the heteroepitaxial III–V material on Si. Secondly, the small lateral and vertical dimensions facilitate process co-integration with Si complementary metal-oxide-semiconductor (CMOS) in the front end of the line. Thirdly, combining with monolithically integrated CMOS circuits with low device capacitance and parasitic capacitance, the nano-cavity optoelectronic devices consume orders of magnitude less power than the conventional lasers and reduce the energy consumption. Fourthly, the modulation bandwidth of the plasmonic light-sources is enhanced to significantly higher than conventional lasers due to enhanced photon state density and transition rate. In addition, we show that these device performance are very robust after taking into account the surface recombination and variations in device fabrication processes. PMID:26369698

  8. Surface acoustic waves/silicon monolithic sensor processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Fathimulla, M. A.; Mehter, E. A.

    1981-01-01

    Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

  9. Optoelectronic optimization of mode selective converter based on liquid crystal on silicon

    NASA Astrophysics Data System (ADS)

    Wang, Yongjiao; Liang, Lei; Yu, Dawei; Fu, Songnian

    2016-03-01

    We carry out comprehensive optoelectronic optimization of mode selective converter used for the mode division multiplexing, based on liquid crystal on silicon (LCOS) in binary mode. The conversion error of digital-to-analog (DAC) is investigated quantitatively for the purpose of driving the LCOS in the application of mode selective conversion. Results indicate the DAC must have a resolution of 8-bit, in order to achieve high mode extinction ratio (MER) of 28 dB. On the other hand, both the fast axis position error of half-wave-plate (HWP) and rotation angle error of Faraday rotator (FR) have negative influence on the performance of mode selective conversion. However, the commercial products provide enough angle error tolerance for the LCOS-based mode selective converter, taking both of insertion loss (IL) and MER into account.

  10. Design and characterization of ultra-stretchable monolithic silicon fabric

    NASA Astrophysics Data System (ADS)

    Rojas, J. P.; Arevalo, A.; Foulds, I. G.; Hussain, M. M.

    2014-10-01

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  11. Design and characterization of ultra-stretchable monolithic silicon fabric

    SciTech Connect

    Rojas, J. P.; Hussain, M. M.; Arevalo, A.; Foulds, I. G.

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  12. Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

    NASA Astrophysics Data System (ADS)

    VanDevender, B. A.; Bodine, L. I.; Myers, A. W.; Amsbaugh, J. F.; Howe, M. A.; Leber, M. L.; Robertson, R. G. H.; Tolich, K.; Van Wechel, T. D.; Wall, B. L.

    2012-05-01

    The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium β-decay electrons that pass through its electromagnetic spectrometer with a highly segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-μm-thick silicon, with contact between titanium nitride (TiN)-coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50 N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

  13. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon.

    PubMed

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab; Zhao, Chao; Ooi, Boon S; Bhattacharya, Pallab

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm(2), 3 × 10(-17) cm(2), 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. PMID:24971807

  14. Towards optical optimization of planar monolithic perovskite/silicon-heterojunction tandem solar cells

    NASA Astrophysics Data System (ADS)

    Albrecht, Steve; Saliba, Michael; Correa-Baena, Juan-Pablo; Jäger, Klaus; Korte, Lars; Hagfeldt, Anders; Grätzel, Michael; Rech, Bernd

    2016-06-01

    Combining inorganic–organic perovskites and crystalline silicon into a monolithic tandem solar cell has recently attracted increased attention due to the high efficiency potential of this cell architecture. Promising results with published efficiencies above 21% have been reported so far. To further increase the device performance, optical optimizations enabling device related guidelines are highly necessary. Here we experimentally show the optical influence of the ITO thickness in the interconnecting layer and fabricate an efficient monolithic tandem cell with a reduced ITO layer thickness that shows slightly improved absorption within the silicon sub-cell and a stabilized power output of 17%. Furthermore we present detailed optical simulations on experimentally relevant planar tandem stacks to give practical guidelines to reach efficiencies above 25%. By optimizing the thickness of all functional and the perovskite absorber layers, together with the optimization of the perovskite band-gap, we present a tandem stack that can yield ca 17.5 mA cm‑ 2 current in both sub-cells at a perovskite band-gap of 1.73 eV including losses from reflection and parasitic absorption. Assuming that the higher band-gap of the perovskite absorber directly translates into a higher open circuit voltage, the perovskite sub-cell should be able to reach a value of 1.3 V. With that, realistic efficiencies above 28% are within reach for planar monolithic tandem cells in which the thickness of the perovskite top-cell and the perovskite band-gap are highly optimized. When applying light trapping schemes such as textured surfaces and by reducing the parasitic absorption of the functional layers, for example in spiro-OMeTAD, this monolithic tandem can overcome 30% power conversion efficiency.

  15. Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

    PubMed

    Song, Junfeng; Luo, Xianshu; Kee, Jack Sheng; Han, Kyungsup; Li, Chao; Park, Mi Kyoung; Tu, Xiaoguang; Zhang, Huijuan; Fang, Qing; Jia, Lianxi; Yoon, Yong-Jin; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2013-07-29

    We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications. PMID:23938665

  16. Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

    PubMed

    Chen, Lung-Chien; Weng, Chiao-Yu

    2015-12-01

    This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors. PMID:26474885

  17. Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications

    NASA Astrophysics Data System (ADS)

    Chen, Lung-Chien; Weng, Chiao-Yu

    2015-10-01

    This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

  18. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources

    NASA Astrophysics Data System (ADS)

    Lee, Wook-Jae; Kim, Hyunseok; Farrell, Alan C.; Senanayake, Pradeep; Huffaker, Diana L.

    2016-02-01

    A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductor nanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source.

  19. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  20. Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators.

    PubMed

    Park, Sungbong; Tsuchizawa, Tai; Watanabe, Toshifumi; Shinojima, Hiroyuki; Nishi, Hidetaka; Yamada, Koji; Ishikawa, Yasuhiko; Wada, Kazumi; Itabashi, Seiichi

    2010-04-12

    We demonstrate the monolithic integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of monolithic integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si. PMID:20588687

  1. Monolithic Single-Mode DFB Laser Array with Precise Wavelength Control for Optoelectronic Integration using an Equivalent Phase Shift Method

    NASA Astrophysics Data System (ADS)

    Li, Jingsi; Cheng, Julian; Microelectronics Research Center Team

    2013-03-01

    The integrated distributed feedback (DFB) laser array is a key component in photonic integrated circuits for wavelength-division multiplexing (WDM) system. However, it is difficult to precisely control the wavelength of individual lasers. When the rear facet of the laser is coated with a high-reflectivity mirror, a random phase change is introduced that shifts the lasing wavelength, making monolithic integration of a wavelength-controlled WDM array very difficult. To solve this problem, we propose a method to precisely control the lasing wavelength of DFB lasers over a wide range by introducing an equivalent phase shift in the cavity using sampled Bragg gratings, using wafer-scale optical lithography and requiring only coarse dimension control. The wavelength can be fine-tuned by applying different DC currents. It is shown that a WDM-DFB laser array with uniform wavelength spacing can be controlled accurately in this manner. Integrated arrays of single-mode DFB lasers for WDM systems can thus be fabricated in a low-cost manner without using low-throughput e-beam lithography, and is scalable for mass-manufacturing.

  2. A monolithically integrated power JFET and Junction Barrier Schottky diode in 4H Silicon Carbide

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, Rahul

    Efficiency of power management circuits depends significantly on their constituent switches and rectifiers. The demands of technology are increasingly running up against the intrinsic properties of Si based power devices. 4H-Silicon Carbide (SiC) has superior properties that make it attractive for high power applications. SiC rectifiers are already a competitive choice and SiC switches have also been commercialized recently. Junction Barrier Schottky (JBS) diodes, which combine the advantages of PN and Schottky, have higher Figure of Merit (FOM) as rectifiers. Among switches, a robust and mature process has been developed for Silicon Carbide Vertical Junction Field Effect Transistors (VJFETs), which currently gives it the highest unipolar FOM. Switches are frequently combined with anti-parallel diodes in power circuits. This thesis describes the development of a SiC-based monolithically integrated power switch and diode. Monolithic integration increases reliability and efficiency, and reduces cost. Because of their superior properties and similarities in fabrication, we chose the SiC VJFET and JBS diode as the switch and rectifier. Detailed design, fabrication and characterization of the integrated switch to block above 800 V and conduct current beyond 100 A/cm2 is explained. In this process, the first physics-based 2-D compact model is developed for reverse leakage in a JBS diode as a function of design parameters. Since the gate-channel junctions of SiC VJFETs cannot be assumed to be abrupt, an existing analytical model for Si VJFETs is extended to account for graded gate-channel junctions. Using these analytical models, design rules are developed for the VJFET and JBS diode. Finite element simulations are used to find the best anode layout of the JBS diode and optimize electric field termination in the integrated device to ensure their capability to operate at high voltage. Finally, a spin-on glass based process is developed for filling the gate trenches of the

  3. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon

    PubMed Central

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-01-01

    Microchannel plates are vacuum-based electron multipliers for particle—in particular, photon— detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80–120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200°C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process. PMID:24698955

  4. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.

    PubMed

    Zhao, Chao; Ng, Tien Khee; ElAfandy, Rami T; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Ajia, Idris A; Roqan, Iman S; Janjua, Bilal; Shen, Chao; Eid, Jessica; Alyamani, Ahmed Y; El-Desouki, Munir M; Ooi, Boon S

    2016-07-13

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the "green gap" has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley-Read-Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment. PMID:27352143

  5. Optoelectronic ATM switch employing hybrid silicon CMOS/GaAs FET-SEEDs

    NASA Astrophysics Data System (ADS)

    Lentine, Anthony L.; Reiley, Daniel J.; Novotny, Robert A.; Morrison, Rick L.; Sasian, Jose M.; Beckman, Martin G.; Buchholz, D. B.; Hinterlong, Stephen J.; Cloonan, Thomas J.; Richards, Gaylord W.; McCormick, Frederick B., Jr.

    1996-03-01

    In the past few years, the demand for telecommunications services beyond voice telephony has skyrocketed. For the growth of these services to continue at this rate, cost effective means of transporting and switching large amounts of information must be found. Although fiber optic transmission has significantly reduced the cost of transmission, switching high bandwidth signals remains expensive. While all electronic switching systems are certainly possible for these high bandwidth systems, considerable effort has been expended to reduce the cost of fiber optic connections between frames or racks of equipment separated by several meters. As an example, one can envision fiber-optic data links connecting the line units that receive and transmit data from the outside world with an electronic switching fabric. Optical data links, ODLs, can perform the optical to electrical conversions. Several of these optical data links can be electrically connected with electronic switching chips on a printed circuit board. As the demand for bandwidth increases, several hundred to several thousand optical fibers might be incident on the switching fabric. Discrete optical data links and parallel data links with up to 32 fibers per data link remain an expensive solution to transporting this information due to their per-link cost, physical size, and power dissipation. Power dissipation on the switching chips is high because of the need for electronic drivers for the high speed electrical interconnections between the switching chips and the data links. By integrating the O/E conversions directly onto the switching chips, lower cost and higher density systems can be built. In this paper, we describe preliminary results of an experimental optoelectronic switching network based on this lower cost solution. The network is designed to be part of an asynchronous transfer mode (ATM) network based on the Growable Packet Architecture. The switching chip consists of GaAs/AlGaAs multiple quantum well

  6. Spark plasma sintering of monolithic silicon carbide and silicon carbide-graphene composite

    NASA Astrophysics Data System (ADS)

    Sharfuzzaman, Amin Mohammad

    Ball milled alpha -- SiC (2.73 microm) was consolidated rapidly using spark plasma sintering at 1800, 1900, and 2000 °C under 90 MPa pressure and 20 min of soaking time. Relatively high densification (>90% relative density) was achieved at 2000 °C. The densification stages were identified, and a three stage densification process was proposed. The formal densification study was performed using the model proposed by Ashby, and the dominant mechanism for densification was determined to be grain boundary accommodated diffusion controlled creep. The formal grain growth mechanism was also investigated, and similar result was found. The value of stress exponent was calculated as 1.1, and the activation energy needed for final stage densification was found to be ≈ 427 - 500 KJ/mol. Also, nano-grain clustering was identified as an auxiliary mechanism from microstructural analysis. The reinforcement of SiC was done with 1, 2, and 3 vol.% graphene. Mechanical characterizations were performed on the reinforced ceramics, and inter-granular fracture was seen. Graphene didn't cause any improvement in hardness of SiC, but showed substantial improvement in flexural strength. Graphene proved to be very useful in restraining grain growth, but decreased the density of monolithic SiC.

  7. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    NASA Astrophysics Data System (ADS)

    Bisello, Francesca; Menichelli, David; Scaringella, Monica; Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta; Bruzzi, Mara

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm2 modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1-2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, 60Co radiation and 226 MeV protons is reported.

  8. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Palacios-Huerta, L.; Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Aceves-Mijares, M.; Domínguez-Horna, C.; Morales-Sánchez, A.

    2016-07-01

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si+ implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  9. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1997-02-25

    Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  10. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, S.W.

    1998-06-16

    An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

  11. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1998-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  12. Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications

    DOEpatents

    Tam, Shiu-Wing

    1997-01-01

    An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

  13. Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

    NASA Astrophysics Data System (ADS)

    Wagesreither, Stefan; Bertagnolli, Emmerich; Kawase, Shinya; Isono, Yoshitada; Lugstein, Alois

    2014-11-01

    In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor-liquid-solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.

  14. Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires.

    PubMed

    Wagesreither, Stefan; Bertagnolli, Emmerich; Kawase, Shinya; Isono, Yoshitada; Lugstein, Alois

    2014-11-14

    In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor-liquid-solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom. PMID:25337772

  15. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Semiannual subcontract progress report, 1 December 1984-31 May 1985

    SciTech Connect

    Ashton, G.R.; Aspen, F.E.; Jacobson, R.L.; Jeffrey, F.R.; Tran, N.T.

    1986-01-01

    This report presents interim results of research in high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells, which consists of five research tasks: (1) amorphous silicon materials research, (2) nonsemiconductor materials research, (3) solar cell research, (4) monolithic, intraconnected cells/submodule research, and (5) multichamber deposition system research. The subcontracted work reported here advances the state of the art in thin-film amorphous silicon solar cell development through work on flexible substrates. A multichamber deposition system for depositing a-Si onto polyimide flexible web is essentially complete.

  16. Comparison of dynamic fatigue behavior between SiC whisker-reinforced composite and monolithic silicon nitrides

    NASA Technical Reports Server (NTRS)

    Choi, Sung R.; Salem, Jonathan A.

    1991-01-01

    The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2 MPa/min at 1300 C, resulting in a very low value of n equals 5.8. Fractographic analysis showed that glassy phases in the slow crack growth region were more pronounced in the composite compared to the monolithic material, implying that SiC whisker addition promotes the formation of glass rich phases at the grain boundaries, thereby enhancing fatigue. These results indicate that SiC whisker addition to Si3 N4 matrix substantially deteriorates fatigue resistance inherent to the matrix base material for this selected material system.

  17. Novel silicone materials for LED packaging and opto-electronics devices

    NASA Astrophysics Data System (ADS)

    Vanlathem, Eric; Norris, Ann W.; Bahadur, Maneesh; DeGroot, Jon; Yoshitake, Makoto

    2006-04-01

    Silicone based materials have attracted considerable attention from Light Emitting Diode (LED) manufacturers. In LEDs, silicones can function in several roles that include optical lenses, stress relieving encapsulants, mechanical protection and light path materials. The key attributes of silicones that make them attractive materials for high brightness (HB) LEDs include their excellent transparency in the UV-visible region, their non-discoloring behavior and their stable thermo-mechanical properties. The first part of this paper/presentation will describe recent silicone materials development efforts directed towards providing LED manufacturers with silicone materials solutions for LED device fabrication. Injection molding of novel silicone resin based materials will be discussed as a viable route for high throughput LED device manufacturing. For other portions of the light spectrum, specifically at telecom wavelengths, the performances of silicone based materials are also verified and this makes them attractive materials for numerous photonics device applications. The second part of this paper/presentation will describe recent demonstrations of siloxane for use as waveguides for datacom and telecom applications. A Variable Optical Attenuator (VOA) utilizing silicone based waveguides (exploiting dn/dT property) and an Optical Backplane built from silicone waveguides and out-of-plane mirrors built on glass and FR-4 substrates are discussed.

  18. Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

    NASA Astrophysics Data System (ADS)

    Shin, Sang-Baie; Iijima, Ko-Ichiro; Chiba, Jun-Ichi; Okada, Hiroshi; Iwayama, Sho; Wakahara, Akihiro

    2011-04-01

    In this paper, we proposed the possibility of implementing a single chip device for realizing optoelectronic integrated circuits (OEICs). Micro-light-emitting-diode (LED) arrays and a complementary metal-oxide-semiconductor (CMOS) pulse width modulation (PWM) silicon driver were proposed, designed, and fabricated on a single chip. The micro-LED arrays were separated by a dry etching method into 64 pixels of 8×8, each with a size of 30×30 µm2 and operated in 3 V at 100 µA. The PWM Si driver was well operated and modulated using various control signals. Furthermore, to investigate the driver for handling massive parallel information, a simple multifunctional driver was designed, fabricated, and flip-chip-bonded using a gold compliant bump and anisotropic conductive adhesive with micro-LED arrays.

  19. Optoelectronic properties of ZnO film on silicon after SF6 plasma treatment and milliseconds annealing

    NASA Astrophysics Data System (ADS)

    Prucnal, S.; Gao, Kun; Zhou, Shengqiang; Wu, Jiada; Cai, Hua; Gordan, Ovidiu D.; Zahn, Dietrich R. T.; Larkin, G.; Helm, M.; Skorupa, W.

    2014-12-01

    Zinc oxide thin film is one of the most promising candidates for the transparent conductive layer in microelectronic and photovoltaic applications, due to its low resistivity and high transmittance in the visible spectral range. In this letter, we present optoelectronic and structural properties of fluorine doped ZnO films deposited at low temperature on a silicon substrate. The fluorine doping was made by post-deposition SF6 plasma treatment and activation by the millisecond range flash lamp annealing. Both the microstructural and optical investigations confirm the formation of a high-quality, highly doped n-type ZnO layer. The current-voltage characteristics show a heterojunction between n+-ZnO and Si. Moreover, it is shown that the SF6 plasma treatment efficiently passivates the surface state and bulk defects in the ZnO film.

  20. Matrix cracking and creep behavior of monolithic zircon and zircon silicon carbide fiber composites

    NASA Astrophysics Data System (ADS)

    Anandakumar, Umashankar

    In this study, the first matrix cracking behavior and creep behavior of zircon matrix silicon carbide fiber composites were studied, together with the fracture and creep behavior of the monolithic zircon. These behaviors are of engineering and scientific importance, and the study was aimed at understanding the deformation mechanisms at elevated temperatures. The first matrix cracking behavior of zircon matrix uniaxially reinforced with silicon carbide fiber (SCS-6) composites and failure behavior of monolithic zircon were studied as a function of temperature (25°C, 500°C, and 1200°C) and crack length in three point bending mode. A modified vicker's indentation technique was used to vary the initial crack length in monolithic and composite samples. The interfacial shear strength was measured at these temperatures from matrix crack saturation spacing. The composites exhibited steady state and non steady state behaviors at the three different temperatures as predicted by theoretical models, while the failure stress of zircon decreased with increasing stress. The intrinsic properties of the composites were used to numerically determine the results predicted by three different matrix cracking models based on a fracture mechanics approach. The analysis showed that the model based on crack bridging analysis was valid at 25°C and 500°C, while a model based on statistical fiber failure was valid at 1200°C. Microstructural studies showed that fiber failure in the crack wake occurred at or below the matrix cracking stress at 1200°C, and no fiber failure occurred at the other two temperatures, which validated the results predicted by the theoretical models. Also, it was shown that the interfacial shear stress corresponding to debonding determined the matrix cracking stress, and not the frictional shear stress. This study showed for the first time, the steady state and non-steady state matrix cracking behavior at elevated temperatures, the difference in behavior between

  1. Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser.

    PubMed

    Okumura, Tadashi; Oda, Katsuya; Kasai, Junichi; Sagawa, Misuzu; Suwa, Yuji

    2016-05-01

    Silicon (Si) monolithic lasers are key devices in large-scale, high-density photonic integrated circuits. Germanium (Ge) is promising as an active layer due to the complementary metal-oxide semiconductor process compatibility with Si. A net optical gain from Ge is essential to demonstrate lasing operation. We fabricated Ge waveguides and investigated the n-type doping effect on the net optical gain. The estimated net gain of the n-Ge waveguide increased from -2200 to -500/cm, namely reducing loss, under optically pumped condition. PMID:27137529

  2. A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane.

    PubMed

    Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar; Wang, Yongjie; Li, Lu; Mi, Zetian

    2016-06-20

    A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon dioxide (CO2 ) is demonstrated. Such a monolithically integrated nanowire/solar cell photocathode offers several unique advantages, including the absorption of a large part of the solar spectrum and highly efficient carrier extraction. With the incorporation of copper as the co-catalyst, the devices exhibit a Faradaic efficiency of about 19 % for the 8e(-) photoreduction to CH4 at -1.4 V vs Ag/AgCl, a value that is more than thirty times higher than that for the 2e(-) reduced CO (ca. 0.6 %). PMID:27128407

  3. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  4. Synthesis and properties of transparent cycloaliphatic epoxy-silicone resins for opto-electronic devices packaging

    NASA Astrophysics Data System (ADS)

    Gao, Nan; Liu, WeiQu; Yan, ZhenLong; Wang, ZhengFang

    2013-01-01

    Cycloaliphatic epoxy-silicone resins were successfully synthesized through a two-step reaction route: (і) hydrosilylation of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) and 1,2-epoxy-4-vinyl-cyclohexane (VCMX), (іі) blocking of unreacted Sisbnd H in (і) with n-butanol. The molecular structures of the cycloaliphatic epoxy-silicone resins were characterized by Fourier transform infrared (FT-IR) and nuclear magnetic resonance (1H NMR and 29Si NMR). High grafting efficiencies of epoxy groups were confirmed by 1H NMR combined with weighting results, indicating over 90 mol% of cycloaliphatic epoxy were grafted on the silicone resins. Subsequently, Sisbnd H groups from TMCTS were almost totally consumed after the blocking reactions. In comparison with commercial available cycloaliphatic epoxy resin 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate (ERL-4221) cured by MHHPA, the cured cycloaliphatic epoxy-silicone resins exhibited better thermal stability, lower water absorption and higher UV/thermal resistance. Moreover, the characteristics of transmittance (>90%, 800 nm), 5 wt.% mass loss temperature (>330 °C) and no yellowing during thermal aging at 120 °C or UV aging for 288 h of the cured cycloaliphatic epoxy-silicone resins, made them possible for power light-emitting diode (LED) encapsulants, or other packaging materials, like optical lenses, and electronic sealings.

  5. Study of silicone-based materials for the packaging of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Yeong-Her

    The first part of this work is to evaluate the main materials used for the packaging of high power light-emitting diodes (LEDs), i.e., the die attach materials, the encapsulant materials, and high color rendering index(CRI) sol-gel composite materials. All of these materials had been discussed the performance, reliability, and issues in high power LED packages. High power white LEDs are created either from blue or near-ultraviolet chips encapsulated with a yellow phosphor, or from red-green-blue LED light mixing systems. The phosphor excited by blue LED chip was mostly used in experiment of this dissertation. The die attach materials contains filler particles possessing a maximum particle size less than 1.5 mum in diameter blended with epoxy polymer matrix. Such compositions enable thin bond line thickness, which decreases thermal resistance that exists between thermal interface materials and the corresponding mating surfaces. The thermal conductivity of nano silver die attach materials is relatively low, the thermal resistance from the junction to board is just 1.6 KW-1 in the bond line thickness of 5.3 mum, which is much lower than the thermal resistance using conventional die attach materials. The silicone die attach adhesive made in the lab cures through the free radical reaction of epoxy-functional organopolysiloxane and through the hydrosilylation reaction between alkenyl-functional organopolysiloxane and silicone-boned hydrogen-functional organopolysiloxane. By the combination of the free radical reaction and the hydrosilylation reaction, the low-molecular-weight silicone oil will not be out-migrated and not contaminate wire bondability to the LED chip and lead frame. Hence, the silicone die attach adhesive made in the lab can pass all reliability tests, such as operating life test JEDEC 85°C/85RH and room temperature operating life test. For LED encapsulating materials, most of commercial silicone encapsulants still suffer thermal/radiation induced

  6. Development of large-area monolithically integrated Silicon-Film photovoltaic modules. Annual subcontract report, 16 November 1991--31 December 1992

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Shreve, K.P.; Hall, R.B.; Barnett, A.M.

    1993-06-01

    This report describes work to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (< 100-{mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup 2}, 18%-efficient, monolithic array. The short-term objectives are to improve material quality and to fabricate 100 cm{sup 2} monolithically interconnected solar cell arrays. Low minority-carrier diffusion length in the silicon film and series resistance in the interconnected device structure are presently limiting device performance. Material quality is continually improving through reduced impurity contamination. Metallization schemes, such as a solder-dipped interconnection process, have been developed that will allow low-cost production processing and minimize R{sub s} effects. Test data for a nine-cell device (16 cm{sup 2}) indicated a V{sub oc} of 3.72 V. These first-reported monolithically interconnected multicrystalline silicon-on-ceramic devices show low shunt conductance (< 0.1 mA/cm{sup 2}) due to limited conduction through the ceramic and no process-related metallization shunts.

  7. Monolithic integration of common mode filters with electrostatic discharge protection on silicon/porous silicon hybrid substrate

    NASA Astrophysics Data System (ADS)

    Capelle, M.; Billoué, J.; Concord, J.; Poveda, P.; Gautier, G.

    2014-02-01

    This work presents the integration of a common mode filter with ElectroStatic Discharge protection on a silicon/porous silicon hybrid substrate. The porous silicon fabrication was performed after the integration of active components. Thus, a fluoropolymer hard mask was used to protect the active devices during anodization and can be easily removed without damaging the porous silicon. Electrical characterization results have shown fully operational components and an increase of performance with the hybrid substrate regarding to p+-type silicon. Indeed, the cutoff frequency was increased by 8.8 GHz when porous silicon was fabricated below the bump pads and the inductors. This improvement is a promising result to extend the application of RF components for future communication standards with silicon technology.

  8. A New Silicon Allotrope with a Direct Band Gap for Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Guo, Yaguang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru; Peking University Team; Kawazoe Collaboration; Jena Collaboration

    Silicon structures with direct band gaps have been hotly pursued for solar cell applications. To effectively harvest the sunlight in the whole frequency region, it is a good strategy to use arrays consisting of Si structures with different direct band gaps. However, the structure with a direct band gap about 0.6 eV has been missing according to current progress made in the direction. Here we report our findings that the missing structure can be constructed by using Si triangles as the building blocks, which is stable dynamically and thermally, not only exhibiting the desirable band gap, but also showing high intrinsic mobility and low mass density. These advantages over the existing Si structures would motivate new experimental effort in this direction.

  9. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    NASA Astrophysics Data System (ADS)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  10. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  11. Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals.

    PubMed

    Wu, Fan; Stark, Eran; Ku, Pei-Cheng; Wise, Kensall D; Buzsáki, György; Yoon, Euisik

    2015-12-16

    We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ∼ 50 μm apart and of differential somato-dendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals. PMID:26627311

  12. Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using trisilane

    NASA Astrophysics Data System (ADS)

    Du, Wenhui; Yang, Xiesen; Povolny, Henry; Liao, Xianbo; Deng, Xunming

    2005-03-01

    We explored the deposition of hydrogenated amorphous silicon (a-Si : H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of ~1.5 for the same hydrogen dilution (R = [H2]/[Si3H8] or [H2]/[ Si2H6]). Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si : H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (Voc) on hydrogen dilution was investigated. Voc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.

  13. Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

    NASA Astrophysics Data System (ADS)

    Dutta, Satadal; Hueting, Raymond J. E.; Annema, Anne-Johan; Qi, Lin; Nanver, Lis K.; Schmitz, Jurriaan

    2015-09-01

    This work presents the modeling of light emission from silicon based p+n junctions operating in avalanche breakdown. We revisit the photon emission process under the influence of relatively high electric fields in a reverse biased junction ( > 10 5 V/cm). The photon emission rate is described as a function of the electron temperature T e , which is computed from the spatial distribution of the electric field. The light emission spectra lie around the visible spectral range ( λ ˜ 300-850 nm), where the peak wavelength and the optical intensity are both doping level dependent. It is theoretically derived that a specific minimum geometrical width ( ˜ 170 nm) of the active region of avalanche is required, corresponding to a breakdown voltage of ˜5 V, below which the rate of photon emission in the desired spectrum drops. The derived model is validated using experimental data obtained from ultra-shallow p+n junctions with low absorption through a nm-thin p+ region and surface coverage of solely 3 nm of pure boron. We observe a peak in the emission spectra near 580 nm and 650 nm for diodes with breakdown voltages 7 V and 14 V, respectively, consistent with our model.

  14. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices.

    PubMed

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K; Das, Soumen; Ray, Samit K

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450-800 nm are found to be stable in the temperature range of 10-350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 10(11) Jones, respectively at an applied bias of -2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  15. Novel Colloidal MoS2 Quantum Dot Heterojunctions on Silicon Platforms for Multifunctional Optoelectronic Devices

    PubMed Central

    Mukherjee, Subhrajit; Maiti, Rishi; Katiyar, Ajit K.; Das, Soumen; Ray, Samit K.

    2016-01-01

    Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials. PMID:27357596

  16. Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion

    SciTech Connect

    2010-09-01

    ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

  17. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  18. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect

    Dargis, Rytis Clark, Andrew; Erdem Arkun, Fevzi; Grinys, Tomas; Tomasiunas, Rolandas; O'Hara, Andy; Demkov, Alexander A.

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  19. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986

    SciTech Connect

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  20. Characterization of a submillimeter high-angular-resolution camera with a monolithic silicon bolometer array for the Caltech Submillimeter Observatory

    NASA Astrophysics Data System (ADS)

    Wang, Ning; Hunter, T. R.; Benford, D. J.; Serabyn, E.; Lis, D. C.; Phillips, T. G.; Moseley, S. H.; Boyce, K.; Szymkowiak, A.; Allen, C.; Mott, B.; Gygax, J.

    1996-12-01

    We constructed a 24-pixel bolometer camera operating in the 350- and 450- mu m atmospheric windows for the Caltech Submillimeter Observatory (CSO). This instrument uses a monolithic silicon bolometer array that is cooled to approximately 300 mK by a single-shot 3He refrigerator. First-stage amplification is provided by field-effect transistors at approximately 130 K. The sky is imaged onto the bolometer array by means of several mirrors outside the Dewar and a cold off-axis elliptical mirror inside the cryostat. The beam is defined by cold aperture and field stops, which eliminates the need for any condensing horns. We describe the instrument, present measurements of the physical properties of the bolometer array, describe the performance of the electronics and the data-acquisition system, and demonstrate the sensitivity of the instrument operating at the observatory. Approximate detector noise at 350 mu m is 5 \\times 10-15 W/\\radicalHz\\end-radical, referenced to the entrance of the Dewar, and the CSO system noise-equivalent flux density is approximately 4 Jy/\\radicalHz\\end-radical. These values are within a factor of 2.5 of the background limit.

  1. Tensile creep and creep rupture behavior of monolithic and SiC-whisker-reinforced silicon nitride ceramics

    SciTech Connect

    Ohji, Tatsuki; Yamauchi, Yukihiko )

    1993-12-01

    The tensile creep and creep rupture behavior of silicon nitride was investigated at 1,200 to 1,350 C using hot-pressed materials with and without SiC whiskers. Stable steady-state creep was observed under low applied stresses at 1,200 C. Accelerated creep regimes, which were absent below 1,300 C, were identified above that temperature. The appearance of accelerated creep at the higher temperatures attributable to formation of microcracks throughout a specimen. The whisker-reinforced material exhibited better creep resistance than the monolith at 1,200 C. Considerably high values 3 to 5, were obtained for the creep exponent in the overall temperature range. The exponent tended to decrease with decreasing applied stress at 1,200 C. The primary creep mechanism was considered cavitation-enhanced creep. Specimen lifetimes followed the Monkman-Grant relationship except for fractures with large accelerated creep regimes. The creep rupture behavior is discussed in association with cavity formation and crack adolescence.

  2. Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

    NASA Technical Reports Server (NTRS)

    Deadmore, Daniel L.; Sliney, Harold E.

    1988-01-01

    The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.

  3. High temperature life prediction of monolithic silicon carbide heat exchanger tubes

    SciTech Connect

    Sandifer, J.B.; Edwards, M.J.; Brown, T.S. III; Duffy, S.F.

    1994-01-01

    The need for improved performance in high temperature environments is prompting industry to consider the use of structural ceramic materials in heat exchanger tubes and other high temperature components. ln recognition of this need the U. S. Department of Energy has supported work for the development of nondestructive methods for evaluating flaws in monolithic ceramic components and the associated establishment of criteria for the acceptance of flawed components. Under this development of flaw assessment criteria DOE supported the work being presented in this paper. The approach to developing the life prediction model combines finite element predictions considering creep behavior with continuum damage mechanics and Weibull reliability statistics. ABAQUS is used to predict time dependent creep response of the component based on experimental creep data. A continuity parameter is then calculated at each time step following continuum damage mechanics methods. Finally Weibull statistics are used with the resulting continuity parameter to predict the reliability at each time step through the use of the NASA-Lewis computer program CARES interfaced to ABAQUS with ABACARES. There is very limited data available to characterize the creep continuum damage and reliability behavior of the material. For the life prediction model reported it is assumed that the material damages isotropically. Directional effects of the damage can be added as material databases improve.

  4. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  5. Development of large-area monolithically integrated Silicon-Film{trademark} photovoltaic modules. Annual subcontract report, 1 January 1993--31 December 1993

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Ingram, A.E.; Ruffins, T.R.; Thomas, C.J.; Hall, R.B.; Barnett, A.M.

    1994-06-01

    This report describes work performed under a program to develop Silicon-Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin polycrystalline layer of silicon on a durable, insulating, ceramic) substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achievable with the use of light trapping and a passivated back surface. The long-term goal for the product is a 1200-cm{sup {minus}2}, 18%-efficient solar module. This report discusses material quality improvements due to the use of new metallurgical barrier technologies. The barrier is essential in preventing impurity interaction between the silicon film and the low-cost substate. Also, a new filament-based fabric substate material was investigated. Efficiencies greater than 10% were achieved on 1.0-cm{sup 2} devices made on these substrates. We also demonstrated the monolithic fabrication sequence by the fabrication of a prototype array using the device processing sequences developed during Phase 11 of this program.

  6. A monolithically integrated polarization entangled photon pair source on a silicon chip

    PubMed Central

    Matsuda, Nobuyuki; Le Jeannic, Hanna; Fukuda, Hiroshi; Tsuchizawa, Tai; Munro, William John; Shimizu, Kaoru; Yamada, Koji; Tokura, Yasuhiro; Takesue, Hiroki

    2012-01-01

    Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip. PMID:23150781

  7. In situ growth of fluorescent silicon nanocrystals in a monolithic microcapsule as a photostable, versatile platform.

    PubMed

    Zhu, Guixian; Huang, Yu; Bhave, Gauri; Wang, Yuzhen; Hu, Zhongbo; Liu, Xuewu

    2016-08-25

    A facile, one-step method was developed for the in situ formation of fluorescent silicon nanocrystals (SiNC) in a microspherical encapsulating matrix. The obtained SiNC encapsulated polymeric microcapsules (SiPM) possess uniform size (0.1-2.0 μm), strong fluorescence, and nanoporous structure. A unique two stage, time dependent reaction was developed, as the growth of SiNC was slower than the formation of polymeric microcapsules. The resulting SiPM with increasing reaction time exhibited two levels of stability, and correspondingly, the release of SiNC in aqueous media showed different behavior. With reaction time <1 h, the obtained low-density SiPM (LD-SiPM) as matrix microcapsules, would release encapsulated SiNC on demand. With >1 h reaction time, resulting high-density SiPM (HD-SiPM) became stable SiNC reservoirs. SiPM exhibit stable photoluminescence. The porous structure and fluorescence quenching effects make SiPM suitable for bioimaging, drug loading and sorption of heavy metals (Hg(2+) as shown) as an intrinsic indicator. SiPM were able to reduce metal ions, forming SiPM/metal oxide and SiPM/metal hybrids, and their applications in bio-sensing and catalysis were also demonstrated. PMID:27515701

  8. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    PubMed

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated. PMID:23546071

  9. Study of a solid state microdosemeter based on a monolithic silicon telescope: irradiations with low-energy neutrons and direct comparison with a cylindrical TEPC.

    PubMed

    Agosteo, S; Colautti, P; Fanton, I; Fazzi, A; Introini, M V; Moro, D; Pola, A; Varoli, V

    2011-02-01

    A silicon device based on the monolithic silicon telescope technology coupled to a tissue-equivalent converter was proposed and investigated for solid state microdosimetry. The detector is constituted by a ΔE stage about 2 µm in thickness geometrically segmented in a matrix of micrometric diodes and a residual-energy measurement stage E about 500 µm in thickness. Each thin diode has a cylindrical sensitive volume 9 µm in nominal diameter, similar to that of a cylindrical tissue-equivalent proportional counter (TEPC). The silicon device and a cylindrical TEPC were irradiated in the same experimental conditions with quasi-monoenergetic neutrons of energy between 0.64 and 2.3 MeV at the INFN-Legnaro National Laboratories (LNL-INFN, Legnaro, Italy). The aim was to study the capability of the silicon-based system of reproducing microdosimetric spectra similar to those measured by a reference microdosemeter. The TEPC was set in order to simulate a tissue site about 2 μm in diameter. The spectra of the energy imparted to the ▵E stage of the silicon telescope were corrected for tissue-equivalence through an optimized procedure that exploits the information from the residual energy measurement stage E. A geometrical correction based on parametric criteria for shape-equivalence was also applied. The agreement between the dose distributions of lineal energy and the corresponding mean values is satisfactory at each neutron energy considered. PMID:21147791

  10. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Annual report, 1 December 1983-30 November 1984

    SciTech Connect

    Ashton, G.R.; Aspen, F.E.; Epstein, K.A.; Jacobson, R.L.; Jeffrey, F.R.; Patel, R.I.; Shirck, J.R.

    1985-04-01

    The design and construction features of a monolithic, series-connected, amorphous silicon solar cell are presented in this report. Each large-area individual cell was to measure 0.5 cm x 10.0 cm. The technology and systems capabilities of continuous, large-area deposition onto flexible substrates are important to the successful commercialization of thin-film a-Si solar cells, to minimize two of the major factors that influence the overall manufacturing cost of amorphous silicon photovoltaic devices: capital costs and substrate handling costs. Capital costs should be minimized by systems that operate continuously, and substrate handling costs should be minimized by maximizing substrate size. Two basic design concepts for deposition chambers are discussed. One uses an in-line deposition configuration and the other employs a rotating drum that transports the web.

  11. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  12. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  13. Development of large-area monolithically integrated silicon-film{trademark} photovoltaic modules. Final subcontract report, May 1, 1991--December 31, 1994

    SciTech Connect

    Hall, R.B.; Rand, J.A.; Cotter, J.E.

    1995-04-01

    The objective of this program is to develop Silicon Film{trademark} Product III into a low-cost, stable solar cell for large-scale terrestrial power applications. The Product III structure is a thin (<100 {mu}m) polycrystalline layer of silicon on a durable, insulating, ceramic substrate. The insulating substrate allows the silicon layer to be isolated and metallized to form a monolithically interconnected array of solar cells. High efficiency is achieved by the use of light trapping and passivated surfaces. This project focused on the development of five key technologies associated with the monolithic sub-module device structure: (1) development of the film deposition and growth processes; (2) development of the low-cost ceramic substrate; (3) development of a metallurgical barrier technology; (4) development of sub-element solar cell processing techniques; and (5) development of sub-module (isolation and interconnection) processes. This report covers the development approaches and results relating to these technologies. Significant progress has been made in the development of all of the related technologies. This is evidenced by the fabrication of a working 12.0 cm{sup 2} prototype sub-module consisting of 7 elements and testing with an open circuit voltage of 3.9 volts, a short circuit current of 35.2 mA and a fill factor of 63% and an overall efficiency of 7.3%. Another significant result achieved is a 13.4% (NREL verified), 1.0 cm{sup 2} solar cell fabricated from material deposited and grown on a graphite cloth substrate. The significant technological hurdle of the program was and remains the low quality of the photovoltaic layer which is caused by contamination of the photovoltaic layer from the low-cost ceramic substrate by trace impurities found in the substrate precursor materials. The ceramic substrate and metallurgical barrier are being developed specifically to solve this problem.

  14. Investigations on optoelectronic transition mechanisms of silicon nanoporous pillar array by using surface photovoltage spectroscopy and photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Hu, Zhen-Gang; Tian, Yong-Tao; Li, Xin-Jian

    2014-03-01

    We report the electronic transition mechanisms for hydrothermally prepared silicon nanoporous pillar array (Si-NPA), investigated by surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy. By comparing the SPV spectra of single crystal silicon (sc-Si) with that of Si-NPA, the silicon nano-crystallites (nc-Si)/SiOx nanostructure in the Si-NPA could produce SPV in the wavelength range of 300-580 nm. And 580 nm (˜2.14 eV) was considered as the absorption edge of the nc-Si/SiOx nanostructure. After the sample was annealed and oxidized in air at different temperatures, both the SPV in the wavelength range of 300-580 nm and the PL emission band around 690 nm from the nc-Si/SiOx nanostructure weakened and disappeared as the annealing temperature increased from 100 to 500 °C. But both the red-infrared PL band (>710 nm) and the violet-blue PL band were enhanced by increasing the annealing temperature. After 2 years of natural oxidation in air, the SPV features for sc-Si disappeared completely, and the SPV characteristics of the nc-Si/SiOx nanostructure could be clearly observed. After analysis, the Si-O structure related localized states at the nc-Si/SiOx interface dominated the electronic transitions during the red PL emission and the SPV for the nc-Si/SiOx nanostructure in Si-NPA, the red-infrared PL was due to the Si=O structure related electronic transitions, and the violet-blue PL emission could attribute to the oxygen-related defect related recombination of the photo induced carriers.

  15. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    DOEpatents

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  16. Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Jha, Himanshu S.; Yadav, Asha; Singh, Mukesh; Kumar, Shailendra; Agarwal, Pratima

    2015-03-01

    Silicon carbide (SiC) thin films have been deposited using a hot-wire chemical vapor deposition technique on quartz substrates with a mixture of silane, methane, and hydrogen gases as precursors at a reasonably high deposition rate of approximately 15 nm/min to 50 nm/min. The influence of the filament temperature ( T F) on the structural, optical, and electrical properties of the SiC film has been investigated using x-ray diffraction, Raman scattering, Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible-near infrared transmission spectroscopy, and dark conductivity ( σ d) studies. Films deposited at low T F (1800°C to 1900°C) are amorphous in nature with high density of Si-Si bonds, whereas high- T F (≥2000°C) films are nanocrystalline embedded in an amorphous SiC matrix with higher concentration of Si-C bonds and negligible concentration of Si-Si bonds. The bandgap ( E g) varies from 2.5 eV to 3.1 eV and σ d (50°C) from ˜10-9 Ω-1 cm-1 to 10-1 Ω-1 cm-1 as T F is increased from 1900°C to 2200°C. This increase in E g and σ d is due to microstructural changes and unintentional oxygen doping of the films.

  17. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  18. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    PubMed

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-01

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs. PMID:26348408

  19. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  20. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  1. SOI monolithic pixel detector

    NASA Astrophysics Data System (ADS)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  2. Heterogeneous integration technology for hybrid optoelectronic and electronic device and module fabrication

    NASA Astrophysics Data System (ADS)

    Jin, Michael Sungchun

    Various forms of optical computing architectures have promised enhanced processing capabilities well beyond the limits of traditional VLSI technology during the past decade. However, the progress toward realizing this vision has been severely limited by the lack of mature technology to fabricate heterogeneously integrated optoelectronic transceiver arrays (consisting of VLSI electronics with optoelectronic devices) that are necessary to link the functionality of photonic input/output devices with electronic processors. This dissertation describes a research effort that addressed this need by exploring innovative, yet highly manufacturable integration approaches that can be utilized to fabricate hybrid optoelectronic transceivers by integrating thin silicon device layers on bulk electro-optic (e.g. lead lanthanum zirconate titanate- PLZT) and other host substrates. The two integration techniques developed are: (1) B& P (Bond and Processing) technology involving bonding of bulk-quality thin silicon layer to PLZT followed by low temperature NMOS processing and (2) DDB (Direct-Device Bonding) technology, where circuit layer fabricated in SOI-silicon is thinned and bonded directly to a PLZT substrate. Characteristics of electronic circuits and modulators in integrated Si/PLZT SLMs are measured to be comparable to that of reference devices fabricated in bulk silicon and PLZT substrates. The application of the developed integration technology specifically toward fabricating Si/PLZT spatial light modulator is examined in detail. The developed device layer grafting technology based on chemo-mechanical lapping and reactive ion etching processes can be applied to assemble miniature ``mixed technology'' systems consisting of devices fabricated by different manufacturing processes (e.g. CMOS, MEMS, VCSEL and GaAs processes) in a monolithic fashion. The latter half of the thesis details experimental

  3. Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon.

    PubMed

    Wang, Renjie; Nguyen, Hieu P T; Connie, Ashfiqua T; Lee, J; Shih, Ishiang; Mi, Zetian

    2014-12-15

    We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs. PMID:25607491

  4. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  5. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  6. Monolithically integrated distributed bragg reflector laser

    SciTech Connect

    Furuya, K.

    1984-08-07

    In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heterostructure medium. Bragg reflectors are properly disposed within the waveguide.

  7. Design, fabrication, and characterization of a planar, silicon-based, monolithically integrated micro laminar flow fuel cell with a bridge-shaped microchannel cross-section

    NASA Astrophysics Data System (ADS)

    López-Montesinos, P. O.; Yossakda, N.; Schmidt, A.; Brushett, F. R.; Pelton, W. E.; Kenis, P. J. A.

    2011-05-01

    We report the fabrication of a planar, silicon-based, monolithically integrated micro laminar flow fuel cell (μLFFC) using standard MEMS and IC-compatible fabrication technologies. The μLFFC operates with acid supported solutions of formic acid and potassium permanganate, as a fuel and oxidant respectively. The micro-fuel cell design features two in-plane anodic and cathodic microchannels connected via a bridge to confine the diffusive liquid-liquid interface away from the electrode areas and to minimize crossover. Palladium high-active-surface-area catalyst was selectively integrated into the anodic microchannel by electrodeposition, whereas no catalyst was required in the cathodic microchannel. A three-dimensional (3D) diffusion-convection model was developed to study the behavior of the diffusion zone and to extract appropriate cell-design parameters and operating conditions. Experimentally, we observed peak power densities as high as 26 mW cm-2 when operating single cells at a flow rate of 60 μL min-1 at room temperature. The miniature membraneless fuel cell design presented herein offers potential for on-chip power generation, which has long been prohibited by integration complexities associated with the membrane.

  8. Silicon photomultiplier readout of a monolithic 270×5×5 cm3 plastic scintillator bar for time of flight applications

    NASA Astrophysics Data System (ADS)

    Reinhardt, Tobias P.; Gohl, Stefan; Reinicke, Stefan; Bemmerer, Daniel; Cowan, Thomas E.; Heidel, Klaus; Röder, Marko; Stach, Daniel; Wagner, Andreas; Weinberger, David; Zuber, Kai

    2016-04-01

    The detection of 200-1000 MeV neutrons requires large amounts, ~ 100 cm, of detector material because of the long nuclear interaction length of these particles. In the example of the NeuLAND neutron time-of-flight detector at FAIR, this is accomplished by using 3000 monolithic scintillator bars of 270 × 5 × 5cm3 size made of a fast plastic. Each bar is read out on the two long ends, and the needed time resolution of σt < 150 ps is reached with fast timing photomultipliers. In the present work, it is investigated whether silicon photomultiplier (SiPM) photosensors can be used instead. Experiments with a picosecond laser system were conducted to determine the timing response of the assembly made up of SiPM and preamplifier. The response of the full system including also the scintillator was studied using 30 MeV single electrons provided by the ELBE superconducting electron linac. The ELBE data were matched by a simple Monte Carlo simulation, and they were found to obey an inverse-square-root scaling law. In the electron beam tests, a time resolution of σt = 136 ps was reached with a pure SiPM readout, well within the design parameters for NeuLAND.

  9. Electron microscopy and microanalysis of the fiber-matrix interface in monolithic silicone carbide-based ceramic composite material for use in a fusion reactor application.

    PubMed

    Toplisek, Tea; Drazic, Goran; Novak, Sasa; Kobe, Spomenka

    2008-01-01

    A composite material made from continuous monolithic silicone carbide (SiC) fibers and a SiC-based matrix (SiC(f)/SiC), was prepared using a novel technique, i.e. adapted dip coating and infiltration of SiC fibers with a water suspension containing SiC particles and a sintering additive. This kind of material could be used in the first-wall blanket of a future fusion reactor. Using magnetron sputtering, the SiC fibers were coated with various thin layers (TiC, CrN, CrC, WC, DLC-diamond-like carbon) of the interface material by physical vapor deposition (PVD). Using scanning and transmission electron microscopy and microanalysis, detailed microstructural studies of the fiber-matrix interface were performed. Both samples, with coated and uncoated fibers, were examined under a load. The microcracks introduced by the Vickers indenter continued their path through the fibers, and thus caused the failure of the composite material, in the case of the uncoated fibers or deviated from their primary direction at the fiber-matrix interface in the case of the coated fibers. PMID:18172883

  10. Performance of a monolithic LaBr3:Ce crystal coupled to an array of silicon photomultipliers

    NASA Astrophysics Data System (ADS)

    Ulyanov, Alexei; Morris, Oran; Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin; Nelms, Nick; Shortt, Brian; Slavicek, Tomas; Granja, Carlos; Solar, Michael

    2016-02-01

    A gamma-ray detector composed of a single 28×28×20 mm3 LaBr3:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

  11. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  12. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  13. Opto-electronic morphological processor

    NASA Technical Reports Server (NTRS)

    Yu, Jeffrey W. (Inventor); Chao, Tien-Hsin (Inventor); Cheng, Li J. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    The opto-electronic morphological processor of the present invention is capable of receiving optical inputs and emitting optical outputs. The use of optics allows implementation of parallel input/output, thereby overcoming a major bottleneck in prior art image processing systems. The processor consists of three components, namely, detectors, morphological operators and modulators. The detectors and operators are fabricated on a silicon VLSI chip and implement the optical input and morphological operations. A layer of ferro-electric liquid crystals is integrated with a silicon chip to provide the optical modulation. The implementation of the image processing operators in electronics leads to a wide range of applications and the use of optical connections allows cascadability of these parallel opto-electronic image processing components and high speed operation. Such an opto-electronic morphological processor may be used as the pre-processing stage in an image recognition system. In one example disclosed herein, the optical input/optical output morphological processor of the invention is interfaced with a binary phase-only correlator to produce an image recognition system.

  14. Research on high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells. Semiannual technical progress report No. 1, 1 December 1983-31 May 1984

    SciTech Connect

    Ashton, G.R.; Aspen, F.E.; Jacobson, R.L.; Jeffrey, F.R.; Shirck, J.R.

    1984-11-01

    This report presents results of the first six months of subcontracted research on high-efficiency, single-junction, monolithic thin-film amorphous silicon solar cells. In this work, facilities and laboratory procedures were established that are dedicated to the fabrication and evaluation of amorphous silicon films prepared by flow discharge deposition. Three glow-discharge deposition systems were set up for materials studies and device fabrication. Microcrystalline film depositions onto 7059 glass as well as onto a polyimide substrate have been accomplished. The polyimide substrates have been evaluated with particular attention to analyzing surface defects. It has been learned that the quality of the intrinsic material is extremely sensitive to residual phosphorous contamination within the deposition systems. Parameter testing, which is designed to optimize the systems, is an ongoing effort. Systems for depositing the stainless steel back contact as well as the indium tin oxide (ITO) front contact were also established. The design and construction features of a monolithic, series-connected amorphous silicon solar cell having a large area are also presented.

  15. Characterization of a PET detector head based on continuous LYSO crystals and monolithic, 64-pixel silicon photomultiplier matrices.

    PubMed

    Llosá, G; Barrio, J; Lacasta, C; Bisogni, M G; Del Guerra, A; Marcatili, S; Barrillon, P; Bondil-Blin, S; de la Taille, C; Piemonte, C

    2010-12-01

    The characterization of a PET detector head based on continuous LYSO crystals and silicon photomultiplier (SiPM) arrays as photodetectors has been carried out for its use in the development of a small animal PET prototype. The detector heads are composed of a continuous crystal and a SiPM matrix with 64 pixels in a common substrate, fabricated specifically for this project. Three crystals of 12 mm × 12 mm × 5 mm size with different types of painting have been tested: white, black and black on the sides but white on the back of the crystal. The best energy resolution, obtained with the white crystal, is 16% FWHM. The detector response is linear up to 1275 keV. Tests with different position determination algorithms have been carried out with the three crystals. The spatial resolution obtained with the center of gravity algorithm is around 0.9 mm FWHM for the three crystals. As expected, the use of this algorithm results in the displacement of the reconstructed position toward the center of the crystal, more pronounced in the case of the white crystal. A maximum likelihood algorithm has been tested that can reconstruct correctly the interaction position of the photons also in the case of the white crystal. PMID:21081823

  16. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates: Final technical report, July 5, 1995--December 31, 1999

    SciTech Connect

    Jeffrey, F.

    2000-03-28

    Iowa Thin Film Technologies is completing a three-phase program that has increased throughput and decreased costs in nearly all aspects of its thin-film photovoltaic manufacturing process. The overall manufacturing costs have been reduced by 61 percent through implementation of the improvements developed under this program. Development of the ability to use a 1-mil substrate, rather than the standard 2-mil substrate, results in a 50 percent cost-saving for this material. Process development on a single-pass amorphous silicon deposition system has resulted in a 37 percent throughput improvement. A wide range of process and machine improvements have been implemented on the transparent conducting oxide deposition system. These include detailed parameter optimization of deposition temperatures, process gas flows, carrier gas flows, and web speeds. An overall process throughput improvement of 275 percent was achieved based on this work. The new alignment technique was developed for the laser scriber and printer systems, which improved registration accuracy from 100 microns to 10 microns. The new technique also reduced alignment time for these registration systems significantly. This resulted in a throughput increase of 75 percent on the scriber and 600 percent on the printer. Automated techniques were designed and implemented for the module assembly processes. These include automated busbar attachment, roll-based lamination, and automated die cutting of finished modules. These processes were previously done by hand labor. Throughput improvements ranged from 200 percent to 1200 percent, relative to hand labor rates. A wide range of potential encapsulation materials were evaluated for suitability in a roll lamination process and for cost-effectiveness. A combination material was found that has a cost that is only 10 percent of the standard EVA/Tefzel cost and is suitable for medium-lifetime applications. The 20-year lifetime applications still require the more expensive

  17. A device and an algorithm for the separation of visible and near infrared signals in a monolithic silicon sensor

    NASA Astrophysics Data System (ADS)

    Langfelder, G.; Malzbender, T.; Longoni, A. F.; Zaraga, F.

    2011-01-01

    The Transverse Field Detector (TFD) is a filter-less and demosaicking-less color sensitive device that easily allows the design of more than three color acquisition channels at each pixel site. The separation of light into different wavelength bands is based on the generation of transverse electric fields inside the device depleted region, and exploits the properties of the Silicon absorption coefficient. In this work we propose such a device for the joint capture of visible and near infrared (NIR) radiation, for possible applications in videoconferencing and 3D imaging. In these applications the detector is used in combination with suitably generated NIR structured light. The information of the fourth acquisition channel, mainly capturing NIR signals, can be used both for sampling NIR light intensity and for subtracting unwanted NIR crosstalk from visible channels thus avoiding the need for the IR-blocking filter. Together with the presentation of a 4-channel sensor, a suitable algorithm for the processing of signals generated in the visible and infrared bands is described. The goal of the algorithm is to minimize the crosstalk of NIR radiation inside the visible channels and, simultaneously, to maintain good color reproduction and noise performance for the sensor, while holding a good sensitivity of the NIR channel up to 900 nm. The analysis indicates that the algorithm reduces the crosstalk of infrared signals inside R, G and B channels from 31%, 12% and 5% respectively to less than 2%. Concerning noise propagation, the worst coefficient of the color conversion matrix (CCM) is -2.1, comparable to those obtained for CCM of Bayer Color Filter Arrays.

  18. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    NASA Technical Reports Server (NTRS)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  19. Optoelectronic bistability effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Lagomarsino, Stefano

    2008-09-01

    A recombination bistability driven only by light irradiance, without any intervention of an externally imposed electric or magnetic field, is possible in doped semiconductors in which recombination is assured by multiply charged centers. This effect is allowed by the competition between two or more different recombination channels, providing that the shallower charged centers capture more likely charge carriers of the same polarity than the deep neutral ones, in spite of columbic repulsion. A close algebraic condition guaranteeing this effect is given, involving the trap parameters of the recombination centers. Deep multiple recombination centers in germanium, silicon, and silicon carbide are identified whose trap parameters make those materials good candidates to the realization of optoelectronic switching devices based on this effect.

  20. GaAs-based optoelectronic neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H. (Inventor); Kim, Jae H. (Inventor); Psaltis, Demetri (Inventor)

    1993-01-01

    An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

  1. Optoelectronic Receiver For Communication And Control

    NASA Technical Reports Server (NTRS)

    Kunath, Richard; Bendett, Mark; Mactaggart, I. Ross

    1994-01-01

    Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

  2. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  3. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  4. A reconfigurable optoelectronic interconnect technology for multi-processor networks

    SciTech Connect

    Lu, Y.C.; Cheng, J.; Zolper, J.C.; Klem, J.

    1995-05-01

    This paper describes a new optical interconnect architecture and the integrated optoelectronic circuit technology for implementing a parallel, reconfigurable, multiprocessor network. The technology consists of monolithic array`s of optoelectronic switches that integrate vertical-cavity surface-emitting lasers with three-terminal heterojunction phototransistors, which effectively combined the functions of an optical transceiver and an optical spatial routing switch. These switches have demonstrated optical switching at 200 Mb/s, and electrical-to-optical data conversion at > 500 Mb/s, with a small-signal electrical-to-optical modulation bandwidth of {approximately} 4 GHz.

  5. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

    SciTech Connect

    Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

    2015-03-15

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

  6. First-principles investigation of electronic structures and properties of impurities in molecular solids and semiconductors: I. Muon and muonium in organic ferromagnets. II. Erbium in silicon-optoelectronic system

    NASA Astrophysics Data System (ADS)

    Jeong, Junho

    The first-principles Hartree-Fock theory is used to obtain the electronic structures and properties of three different systems. For the TEMPO system, the trapping sites were obtained near NO group site for muonium singlet and near chlorine and bridge nitrogen for muon. The calculated hyperfine interactions including relaxation and vibrational effect were used to compare the observed zero field muSR frequency 3.2 MHz. It has been concluded that the two trapping centers that can best explain the observed muSR frequency is trapped singlet muonium near the radical oxygen and a trapped muon site near the chlorine. The direction for the easy axis is determined to be the b-axis of the monoclinic lattice and also is obtained using the magnetic moment distributions in the ferromagnetic state in the absence of muon and muonium. The nuclear quadrupole coupling constants and asymmetry parameters (eta) have studied for the 35Cl, 17O, and 14N nuclei in the TEMPO system for the bare system and systems with trapped muon and muonium. Substantial influence of the muon and muonium on the coupling constants and eta for the nuclei close to the trapping sites have been observed for the systems with trapped muon and muonium. For the beta-NPNN, the observed muSR signal at zero field with frequency 2.1 MHz is assigned to the singlet muonium sites near the two oxygens of the two NO groups and the high frequency signal ascribed to an isotropic hyperfine constant of 400MHz is assigned to the trapped muon sites near the oxygen atoms of the NO groups. Er3+-Si material which emits 1.54 mum wavelength has led to interest in optoelectronic system. Using first-principles HF procedure, the locations of Er3+ in silicon cluster without codopant were determined. Since covalent radius of Er3+ is bigger than that of silicon, the first nearest and second nearest silicon of Er3+ for Hi (Er3+Si14H18), Ti (Er3+ Si10H16, Er3+Si26H 48), and Substitutional site (Er3+Si18H 36) applied relaxation effect. The

  7. Chip scale low dimensional materials: optoelectronics & nonlinear optics

    NASA Astrophysics Data System (ADS)

    Gu, Tingyi

    The CMOS foundry infrastructure enables integration of high density, high performance optical transceivers. We developed integrated devices that assemble resonators, waveguide, tapered couplers, pn junction and electrodes. Not only the volume standard manufacture in silicon foundry is promising to low-lost optical components operating at IR and mid-IR range, it also provides a robust platform for revealing new physical phenomenon. The thesis starts from comparison between photonic crystal and micro-ring resonators based on chip routers, showing photonic crystal switches have small footprint, consume low operation power, but its higher linear loss may require extra energy for signal amplification. Different designs are employed in their implementation in optical signal routing on chip. The second part of chapter 2 reviews the graphene based optoelectronic devices, such as modulators, lasers, switches and detectors, potential for group IV optoelectronic integrated circuits (OEIC). In chapter 3, the highly efficient thermal optic control could act as on-chip switches and (transmittance) tunable filters. Local temperature tuning compensates the wavelength differences between two resonances, and separate electrode is used for fine tuning of optical pathways between two resonators. In frequency domain, the two cavity system also serves as an optical analogue of Autler-Towns splitting, where the cavity-cavity resonance detuning is controlled by the length of pathway (phase) between them. The high thermal sensitivity of cavity resonance also effectively reflects the heat distribution around the nanoheaters, and thus derives the thermal conductivity in the planar porous suspended silicon membrane. Chapter 4 & 5 analyze graphene-silicon photonic crystal cavities with high Q and small mode volume. With negligible nonlinear response to the milliwatt laser excitation, the monolithic silicon PhC turns into highly nonlinear after transferring the single layer graphene with

  8. Low-cost packaging of high-performance optoelectronic components

    SciTech Connect

    Lowry, M.; Lu, Shin-Yee; Pocha, M.; Strand, O.T.

    1994-08-01

    Optoelectronic component costs are often dominated by the costs of attaching fiber optic pigtails--especially for the case of single transverse mode devices. We present early results of our program in low-cost packaging. We are employing machine-vision controlled automated positioning and silicon microbench technology to reduce the costs of optoelectronic components. Our machine vision approach to automated positioning has already attained a positional accuracy of less than 5 microns in less than 5 minutes; accuracies and times are expected to improve significantly as the development progresses. Complementing the machine vision assembly is our manufacturable approach to silicon microbench technology. We will describe our silicon microbench optoelectronic device packages that incorporate built-in heaters for solder bonding reflow.

  9. Selectively Transparent and Conducting Photonic Crystals and their Potential to Enhance the Performance of Thin-Film Silicon-Based Photovoltaics and Other Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    O'Brien, Paul G.

    2011-12-01

    The byproducts of human engineered energy production are increasing atmospheric CO2 concentrations well above their natural levels and accompanied continual decline in the natural reserves of fossil fuels necessitates the development of green energy alternatives. Solar energy is attractive because it is abundant, can be produced in remote locations and consumed on site. Specifically, thin-film silicon-based photovoltaic (PV) solar cells have numerous inherent advantages including their availability, non-toxicity, and they are relatively inexpensive. However, their low-cost and electrical performance depends on reducing their thickness to as great an extent as possible. This is problematic because their thickness is much less than their absorption length. Consequently, enhanced light trapping schemes must be incorporated into these devices. Herein, a transparent and conducting photonic crystal (PC) intermediate reflector (IR), integrated into the rear side of the cell and serving the dual function as a back-reflector and a spectral splitter, is identified as a promising method of boosting the performance of thin-film silicon-based PV. To this end a novel class of PCs, namely selectively transparent and conducting photonic crystals (STCPC), is invented. These STCPCs are a significant advance over existing 1D PCs because they combine intense wavelength selective broadband reflectance with the transmissive and conductive properties of sputtered ITO. For example, STCPCs are made to exhibit Bragg-reflectance peaks in the visible spectrum of 95% reflectivity and have a full width at half maximum that is greater than 200nm. At the same time, the average transmittance of these STCPCs is greater than 80% over the visible spectrum that is outside their stop-gap. Using wave-optics analysis, it is shown that STCPC intermediate reflectors increase the current generated in micromorph cells by 18%. In comparison, the more conventional IR comprised of a single homogeneous

  10. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  11. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  12. Optoelectronic packaging: A review

    SciTech Connect

    Carson, R.F.

    1993-09-01

    Optoelectronics and photonics hold great potential for high data-rate communication and computing. Wide using in computing applications was limited first by device technologies and now suffers due to the need for high-precision, mass-produced packaging. The use of phontons as a medium of communication and control implies a unique set of packaging constraints that was not present in traditional telecommunications applications. The state-of-the-art in optoelectronic packaging is now driven by microelectric techniques that have potential for low cost and high volume manufacturing.

  13. Monolithic Optical-To-Electronic Receiver

    NASA Technical Reports Server (NTRS)

    Kunath, Richard; Mactaggert, Ross

    1994-01-01

    Monolithic optoelectronic integrated circuit converts multiplexed digital optical signals into electrical signals, separates, and distributes them to intended destinations. Developed to deliver phase and amplitude commands to monolithic microwave integrated circuits (MMIC's) at elements of millimeter-wave phased-array antenna from single optical fiber driven by external array controller. Also used in distribution of high-data-rate optical communications in local-area networks (LAN's). Notable features include options for optical or electrical clock inputs; outputs for raw data, addresses, and instructions for diagnosis; and optical-signal-detection circuit used to reduce power consumption by 80 percent between data-transmission times. Chip fabricated by processes available at many major semiconductor foundries. Distribution of digital signals in aircraft, automobiles, and ships potential application.

  14. Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene

    SciTech Connect

    Huang, Bing; Yoon, Mina; Smith, Sean C; Wei, Su-Huai; Deng, Hui-Xiong; Liu, Feng; Lee, Hoonkyung; Sumpter, Bobby G

    2014-01-01

    Silicon is arguably the best electronic material, but not as good an optoelectronic material. By employing first-principles calculations and the cluster-expansion approach, we discover that hydrogenated bilayer silicene (BS) shows promising potential as a new kind of optoelectronic material. Most significantly, hydrogenation converts the intrinsic BS, a strongly indirect semiconductor, into a direct-gap semiconductor with a widely tunable bandgap. At low hydrogen concentrations, four ground states of single- and double-side hydrogenated BS are characterized with dipole-allowed direct (or quasidirect) bandgaps in the desirable range from 1 to 1.5 eV, suitable for solar applications. At high hydrogen concentrations, three well-ordered double-side hydrogenated BS structures exhibit direct (or quasidirect) bandgaps in the color range of red, green, and blue, affording white light-emitting diodes. Our findings open opportunities to search for new silicon-based light-absorption and light-emitting materials for earth-abundant, high-efficiency, optoelectronic applications.

  15. The effect of irradiation on the stability and properties of monolithic silicon carbide and SiC{sub f}/SiC composites up to 25 dpa

    SciTech Connect

    Hollenberg, G.W.; Henager, C.H. Jr.; Youngblood, G.E.; Trimble, D.J.; Simonson, S.A.; Newsome, G.A.; Lewis, E.

    1994-04-01

    Stability and properties of monolithic and SiC{sub f}/SiC composites were measured before and after irradiation in a fast neutron spectrum up to 25 dpa between 500 and 1500C. Dimensional changes were relatively consistent with previous investigations. Strength and modulus of SiC{sub f}/SiC composites decreased after irradiation as a result of fiber/matrix decoupling. For some composites, uniform elongation was not significantly degraded by irradiation. Thermal conductivity also decreased after irradiation at low temperatures because of the introduction of lattice defects as phonon scattering sites. Retention of properties under the severe conditions of 25 dpa and 800C suggests that a composite tailored for neutron damage resistance can be developed.

  16. Picosecond optoelectronic devices

    SciTech Connect

    Lee, C.L.

    1984-01-01

    Ever since the invention of picosecond lasers, scientists and electronic engineers have been dreaming of inventing electronic devices that can record in real time the physical and electronic events that take place on picosecond time scales. With the exception of the expensive streak camera, this dream has been largely unfullfilled. Today, a real-time oscilloscope with picosecond time resolution is still not available. To fill the need for even better time resolution, researchers have turned to optical pulses and thus a hybrid technology has emerged-picosecond optoelectronics. This technology, based on bulk photoconductors, has had a slow start. However, because of the simplicity, scaleability, and jitterfree nature of the devices, the technology has recently experienced a rapid growth. This volume reviews the major developments in the field of picosecond optoelectronics over the past decade.

  17. Towards optoelectronic urea biosensors.

    PubMed

    Pokrzywnicka, Marta; Koncki, Robert; Tymecki, Łukasz

    2015-03-01

    Integration of immobilized enzymes with light-emitting diodes (LEDs) leads to the development of optoelectronic enzyme-based biosensors. In this work, urease, used as a model enzyme, immobilized in the form of an open-tubular microbioreactor or biosensing membrane that has been integrated with two red LEDs. It forms complete, fiberless, miniaturized, and extremely economic biooptoelectronic devices useful for nonstationary measurements under flow analysis conditions. Both enzyme-based biodevices, operating according to the paired emitter detector diode (PEDD) principle, allow relatively fast, highly sensitive, and well-reproducible urea detection in the millimolar range of concentrations. Potential analytical applications of the developed urea bioPEDDs have been announced. Both presented constructions will be easily adapted for the development of other optoelectronic biosensors exploring various enzyme-based schemes of biodetection. PMID:25619983

  18. Complexation of Optoelectronic Systems

    NASA Astrophysics Data System (ADS)

    Boreisho, A. S.; Il‧in, M. Yu.; Konyaev, M. A.; Mikhailenko, A. S.; Morozov, A. V.; Strakhov, S. Yu.

    2016-06-01

    Problems of increasing the efficiency and the functionality of complex optoelectronic systems for monitoring real atmospheric conditions and of their use are discussed. It is shown by the example of a meteorological complex comprising an infrared wind-sensing lidar and an X-range Doppler radar that the complexation of probing systems working in different electromagnetic-radiation ranges opens up new opportunities for determining the meteorological parameters of a turbulent atmosphere and investigating the interaction of radiation with it.

  19. Design of a back-illuminated, crystallographically etched, silicon-on-sapphire avalanche photodiode with monolithically integrated microlens, for dual-mode passive & active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.; Cole, Daniel C.

    2008-12-01

    There is a growing need in space and environmental research applications for dual-mode, passive and active 2D and 3D ladar imaging methods. To fill this need, an advanced back-illuminated avalanche photodiode (APD) design is presented based on crystallographically etched (100) epitaxial silicon on R-plane sapphire (SOS), enabling single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with KOH:IPA:H2O solution through a thermally grown oxide mask, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, Φc = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. Detectors are back-illuminated through light focusing microlenses fabricated in the thinned, AR-coated sapphire substrate. The APDs share a common, front-side anode contact, made locally at the base of each device mesa. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical cross-talk. SOS-APD arrays are indium bump-bonded to CMOS readout ICs to produce hybrid FPAs. The quantum efficiency for the square 27 µm pixels exceeds 50% for 250 nm < λ < 400 nm and exceeds 80% for 400 nm < λ < 700 nm. The sapphire microlenses compensate detector quantum efficiency loss resulting from the mesa geometry and yield 100% sensitive-area-fill-factor arrays, limited in size only by the wafer diameter.

  20. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986

    SciTech Connect

    Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

    1988-09-01

    This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

  1. Photovoltaic manufacturing technology monolithic amorphous silicon modules on continuous polymer substrates. Annual technical progress report, July 5, 1996--December 31, 1997

    SciTech Connect

    Jeffrey, F.

    1998-08-01

    Iowa Thin Film Technologies, Inc.`s (ITF) goal is to develop the most cost effective PV manufacturing process possible. To this end the authors have chosen a roll based manufacturing process with continuous deposition and monolithic integration. Work under this program is designed to meet this goal by improving manufacturing throughput and performance of the manufactured devices. Significant progress was made during Phase 2 of this program on a number of fronts. A new single pass tandem deposition machine was brought on line which allows greatly increased and improved throughput for rolls of tandem material. The TCO deposition process was improved resulting in an increase in throughput by 20%. A new alignment method was implemented on the printing process which improves throughput six fold while improving alignment from 100 {micro}m to 10 {micro}m. A roll based lamination procedure was developed and implemented on selected products which improves throughput from 20 sq. ft./hr. to 240 sq. ft./hr. A wide range of lower cost encapsulants were evaluated. A promising material was selected initially to be introduced in 5 year lifetime type products. The sum of these improvements bring the overall cost reduction resulting from this program to 49%.

  2. Metal oxides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

  3. Metal oxides for optoelectronic applications.

    PubMed

    Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

    2016-04-01

    Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories. PMID:27005918

  4. Design of a silicon avalanche photodiode pixel with integrated laser diode using back-illuminated crystallographically etched silicon-on-sapphire with monolithically integrated microlens for dual-mode passive and active imaging arrays

    NASA Astrophysics Data System (ADS)

    Stern, Alvin G.

    2010-08-01

    There is a growing need in scientific research applications for dual-mode, passive and active 2D and 3D LADAR imaging methods. To fill this need, an advanced back-illuminated silicon avalanche photodiode (APD) design is presented using a novel silicon-on-sapphire substrate incorporating a crystalline aluminum nitride (AlN) antireflective layer between the silicon and R-plane sapphire. This allows integration of a high quantum efficiency silicon APD with a gallium nitride (GaN) laser diode in each pixel. The pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs) with wide dynamic range, supporting passive and active imaging capability in a single FPA. When (100) silicon is properly etched with TMAH solution, square based pyramidal frustum or mesa arrays result with the four mesa sidewalls of the APD formed by (111) silicon planes that intersect the (100) planes at a crystallographic angle, φ c = 54.7°. The APD device is fabricated in the mesa using conventional silicon processing technology. The GaN laser diode is fabricated by epitaxial growth inside of an inverted, etched cavity in the silicon mesa. Microlenses are fabricated in the thinned, and AR-coated sapphire substrate. The APDs share a common, front-side anode contact, and laser diodes share a common cathode. A low resistance (Al) or (Cu) metal anode grid fills the space between pixels and also inhibits optical crosstalk. SOS-APD arrays are flip-chip bump-bonded to CMOS readout ICs to produce hybrid FPAs. The square 27 μm emitter-detector pixel achieves SNR > 1 in active detection mode for Lambert surfaces at 1,000 meters.

  5. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  6. A deep etching mechanism for trench-bridging silicon nanowires

    NASA Astrophysics Data System (ADS)

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  7. A deep etching mechanism for trench-bridging silicon nanowires.

    PubMed

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping. PMID:26854570

  8. Reconfigurable high-speed optoelectronic interconnect technology for multiprocessor computers

    NASA Astrophysics Data System (ADS)

    Cheng, Julian

    1995-06-01

    We describe a compact optoelectronic switching technology for interconnecting multiple computer processors and shared memory modules together through dynamically reconfigurable optical paths to provide simultaneous, high speed communication amongst different nodes. Each switch provides a optical link to other nodes as well as electrical access to an individual processor, and it can perform optical and optoelectronic switching to covert digital data between various electrical and optical input/output formats. This multifunctional switching technology is based on the monolithic integration of arrays of vertical-cavity surface-emitting lasers with photodetectors and heterojunction bipolar transistors. The various digital switching and routing functions, as well as optically cascaded multistage operation, have been experimentally demonstrated.

  9. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2012-02-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  10. Nanomedicine crystals-inspired optoelectronic device materials and processing

    NASA Astrophysics Data System (ADS)

    Fang, Yan; Wang, Fangzhang; Wu, Rong

    2011-11-01

    Aim: Organic, biological materials and soft matters with optoelectronic donors and acceptors are postulated to be novel optoelectronic device materials. Methods: Molecular self-assemblies of nanomedicine crystals are employed by inelastic electron tunneling interaction force, which is a quantum force to make basic units of organic, biological and soft matter with optoelectronic donors and acceptors to be enlarged from nanometers to micrometers on silicon chips. Results: Self-assembled topographic structures and corresponding conducting with kondo effects and photoluminescence properties of self-assembled nanomedicine crystal building blocks are demonstrated by conducting atomic force microscopy (C-AFM) images and current-voltage curves, and laser micro- photoluminescence (PL) spectra. By contrast to top-down processing, the bottom-up processing of molecular self-assembly is low cost on large scale industrial manufacturing. Conclusion: The self-assembled nanomedicine crystal building blocks with optoelectronic donors and acceptors are candidates of novel optoelectronic device materials to be in the emerging discipline of information technology (IT) in its broadest sense, i.e. bioelectronics & biosensors, optoelectronic devices, data storage devices; simple to complex quantum entanglements and superposition for quantum bits computing, a novel strategy for 2020 IT and beyond.

  11. Neuromorphic opto-electronic integrated circuits for optical signal processing

    NASA Astrophysics Data System (ADS)

    Romeira, B.; Javaloyes, J.; Balle, S.; Piro, O.; Avó, R.; Figueiredo, J. M. L.

    2014-08-01

    The ability to produce narrow optical pulses has been extensively investigated in laser systems with promising applications in photonics such as clock recovery, pulse reshaping, and recently in photonics artificial neural networks using spiking signal processing. Here, we investigate a neuromorphic opto-electronic integrated circuit (NOEIC) comprising a semiconductor laser driven by a resonant tunneling diode (RTD) photo-detector operating at telecommunication (1550 nm) wavelengths capable of excitable spiking signal generation in response to optical and electrical control signals. The RTD-NOEIC mimics biologically inspired neuronal phenomena and possesses high-speed response and potential for monolithic integration for optical signal processing applications.

  12. Characterization of a Depleted Monolithic Active Pixel Sensor (DMAPS) prototype

    NASA Astrophysics Data System (ADS)

    Obermann, T.; Havranek, M.; Hemperek, T.; Hügging, F.; Kishishita, T.; Krüger, H.; Marinas, C.; Wermes, N.

    2015-03-01

    New monolithic pixel detectors integrating CMOS electronics and sensor on the same silicon substrate are currently explored for particle tracking in future HEP experiments, most notably at the LHC . The innovative concept of Depleted Monolithic Active Pixel Sensors (DMAPS) is based on high resistive silicon bulk material enabling full substrate depletion and the application of an electrical drift field for fast charge collection, while retaining full CMOS capability for the electronics. The technology (150 nm) used offers quadruple wells and allows to implement the pixel electronics with independently isolated N- and PMOS transistors. Results of initial studies on the charge collection and sensor performance are presented.

  13. The fracture strength of plate and tubular forms of monolithic silicon carbide (SiC) produced by chemical vapor deposition (CVD)

    SciTech Connect

    Cockeram, B.V.

    2000-12-01

    The fracture strength of silicon carbide (SiC) plate deposits produced by Chemical Vapor Deposition (CVD) was determined from room-temperature to 1500 C using a standard 4-point flexural test method (ASTM Cl 161). CVD SiC materials produced by two different manufacturers are shown to have only slightly different flexural strength values, which appear to result from differences in microstructure. Although CVD deposition of SiC results in a textured grain structure, the flexural strength was shown to be independent of the CVD growth direction. The orientation of machining marks was shown to have the most significant influence on flexural strength, as expected. The fracture strength of tubular forms of SiC produced by CVD deposition directly onto a mandrel was comparable to flexural bars machined from a plate deposit. The tubular (o-ring) specimens were much smaller in volume than the flexural bars, and higher strength values are predicted based on Weibull statistical theory for the o-ring specimens. Differences in microstructure between the plate deposits and deposits made on a mandrel result in different flaw distributions and comparable strength values for the flexural bar and o-ring specimens. These results indicate that compression testing of o-rings provides a more accurate strength measurement for tubular product forms of SiC due to more representative flaw distributions.

  14. Optoelectronic Reservoir Computing

    PubMed Central

    Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.

    2012-01-01

    Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825

  15. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  16. Multifrequency optoelectronic oscillator

    NASA Astrophysics Data System (ADS)

    Jiang, Yang; Liang, Jianhui; Bai, Guangfu; Hu, Lin; Cai, Shaohong; Li, Hongxia; Shan, Yuanyuan; Ma, Chuang

    2014-11-01

    We propose a simple and cost-effective multifrequency optoelectronic oscillator (OEO) which is able to simultaneously generate two or more independent microwave signals by adding parallel filtering branches in the feedback loop. In the experimental demonstration, two signals with frequencies of 20 and 9 GHz are successfully generated. Compared with a conventional OEO, the generated signals have no additional noise and do not interfere with each other. The side-mode suppression by the optical dual-loop configuration is effective for both channels. The measured side-mode suppression ratios are larger than 65 dB, and the phase noises at a 10-kHz frequency offset are -108 and -113 dBc/Hz for 20 and 9-GHz signals, respectively.

  17. WARRP Core: Optoelectronic Implementation of Network-Router Deadlock-Handling Mechanisms.

    PubMed

    Pinkston, T M; Raksapatcharawong, M; Choi, Y

    1998-01-10

    The wormhole adaptive recovery-based routing via pre-emption(WARRP) core optoelectronic chip, which integrates coredeadlock-handling circuitry for a fully adaptive deadlock-freemultiprocessor network router, is presented. This chip demonstratesprimarily the integration of complex deadlock-recovery circuitry andfree-space optoelectronic input-output on a monolithicGaAs-based chip. The design and implementation of thefirst-generation, bit-serial, torus-connected chip that uses 1400transistors and six light-emitting diode-photodetector pairs is presented. PMID:18268583

  18. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  19. Nanoscale Optoelectronic Photosynthetic Devices

    NASA Astrophysics Data System (ADS)

    Greenbaum, Elias; Lee, Ida; Guillorn, Michael; Lee, James W.; Simpson, Michael L.

    2001-03-01

    This presentation provides an overview and recent progress in the Oak Ridge National Laboratory research program in molecular electronics and green plant photosynthesis. The photosynthetic reaction center is a nanoscale molecular diode and photovoltaic device. The key thrust of our research program is the construction of molecular electronic devices from these nanoscale structures. Progress in this multidisciplinary research program has been demonstrated by direct electrical contact of emergent electrons with the Photosystem I (PS I) reaction center by nanoparticle precipitation. Demonstration of stable diode properties of isolated reaction centers combined with the ability to orient PS I by self-assembly on a planar surface, makes this structure a good building block for 2-D and potentially 3-D devices. Metallization of isolated PS I does not alter their fundamental photophysical properties and they can be bonded to metal surfaces. We report here the first measurement of photovoltage from single PS I reaction centers. Working at the Cornell University National Nanofabrication Facility, we have constructed sets of dissimilar metal electrodes separated by distances as small as 6 nm. We plan to use these structures to make electrical contact to both ends of oriented PSI reaction centers and thereby realize biomolecular logic circuits. Potential applications of PSI reaction centers for optoelectronic applications as well as molecular logic device construction will be discussed.

  20. Optoelectronic fringe projection operations

    NASA Astrophysics Data System (ADS)

    Garavaglia, Mario; Rabal, Hector J.; Aguirre, E.

    1990-07-01

    We present a simple optoelectronical fringe projection method for topographic or deformation study of objects. Programmed positioning and repositioning can also be performed. 1. DESCRIPTION An incoherent method for fringe projection operations was recently reported'' using photographic procedures. It is extended now to real time operation using an LCD video projector and a CCD camera. Fringes consisting in Rbnchitype rulings are generated in a personal computer and projected onto an object by using a Kodak LCD colour video projector. Its image is then read by a SVHS-CCD Panasonic camera and electronically memorized. This fringe pattern contains information concerning the position and topography of the object stored as fringe phase modulation. A standard state of the object can be frozen in the screen of a monitor and its evolution deformation or misspositioning followed through the Moire between current and stored fringes. Topography of the object expressed as a mathemati cal functi on h ( x y) and its time evolution can alsO be determined from the memorized data. . Besides a conjugated grid can be generated so that when the latter is projected onto the object the observed fringes are corrected to straight lines resembling the original Ronchi rul ings i. e. distortion produced by object topography is cancelled out. Deformations with respect to this state are straightforwardly interpreted by an observer both in magnitude and sign. The system can be made

  1. Optoelectronic integrated tweezers

    NASA Astrophysics Data System (ADS)

    McGreehin, Simon J.; O'Faolin, Liam; Roberts, John; Krauss, Thomas; Dholakia, Kishan

    2004-10-01

    We demonstrate the optical manipulation of microscopic particles within a single optoelectronic device, whose footprint measures 2mm by 3mm, and which is realised entirely in planar technology. The device is fabricated in a GaAs/AlGaAs heterostructure, and consists of two facing banks of lasers that are separated by an etched channel. Particles within this channel experience the simple trapping force of two counter-propagating beams. The lasers operate at a wavelength of 980nm, and each gives up to 10mW of power in a single transverse optical mode. This power is sufficient to deflect, decelerate and hold a variety of micron-scale particles, including fluorescent polymer spheres, and cells in solution. The first results were obtained using planar etched facets, giving highly divergent beams. More elegant beam shapes can be produced by etching curved facets. The main attractions of this technology are its size and self-alignment properties: Many devices can fit into a fraction of the space occupied by a traditional tweezer set-up. Using photo-lithography, the alignment of the lasers is 'perfect', avoiding the difficulties experienced in traditional tweezers. The concept we demonstrate is a truly integrated optical tweezer that is mass-producible and does not require any complex instrumentation to operate.

  2. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-01

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed. PMID:24526085

  3. Toward the optoelectronic ULSI: drivers and barriers

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2004-06-01

    We describe the state of the art in optoelectronic component integration, and the current degree of commercial deployment of integrated optoelectronics as dictated by the balance of market pull and technology push. We also present the long-term outlook for optoelectronic integration, including the drivers and barriers that set the roadmap toward the optoelectronic ULSI. We discuss an optoelectronic integration platform that utilizes organic and inorganic materials for the hybrid integration of passive and active optical elements.

  4. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  5. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    purified tubes aligned in parallel. While the operating principle is somewhat different from that of single-tube diodes because of the presence of metallic tubes in the material, the film diodes nonetheless show a rectifying behavior and much greater light intensity than single-tube devices. With their superior light output and robustness, they bring us one step closer to a real-world application of carbon nanotubes optoelectronics.

  6. Optimal parameters of monolithic high-contrast grating mirrors.

    PubMed

    Marciniak, Magdalena; Gębski, Marcin; Dems, Maciej; Haglund, Erik; Larsson, Anders; Riaziat, Majid; Lott, James A; Czyszanowski, Tomasz

    2016-08-01

    In this Letter a fully vectorial numerical model is used to search for the construction parameters of monolithic high-contrast grating (MHCG) mirrors providing maximal power reflectance. We determine the design parameters of highly reflecting MHCG mirrors where the etching depth of the stripes is less than two wavelengths in free space. We analyze MHCGs in a broad range of real refractive index values corresponding to most of the common optoelectronic materials in use today. Our results comprise a complete image of possible highly reflecting MHCG mirror constructions for potential use in optoelectronic devices and systems. We support the numerical analysis by experimental verification of the high reflectance via a GaAs MHCG designed for a wavelength of 980 nm. PMID:27472602

  7. Internally Cooled Monolithic Silicon Nitride Aerospace Components

    NASA Technical Reports Server (NTRS)

    Best, Jonathan E.; Cawley, James D.; Bhatt, Ramakrishna T.; Fox, Dennis S.; Lang, Jerry (Technical Monitor)

    2000-01-01

    A set of rapid prototyping (RP) processes have been combined with gelcasting to make ceramic aerospace components that contain internal cooling geometry. A mold and core combination is made using a MM6Pro (Sanders Prototyping, Inc.) and SLA-250/40 (3Dsystems, Inc.). The MM6Pro produces cores from ProtoBuild (trademarked) wax that are dissolved in room temperature ethanol following gelcasting. The SLA-250/40 yields epoxy/acrylate reusable molds. Parts produced by this method include two types of specimens containing a high density of thin long cooling channels, thin-walled cylinders and plates, as well as a model hollow airfoil shape that can be used for burner rig evaluation of coatings. Both uncoated and mullite-coated hollow airfoils has been tested in a Mach 0.3 burner rig with cooling air demonstrating internal cooling and confirming the effectiveness of mullite coatings.

  8. Monolithically integrated twin ring diode lasers for rotation sensing applications

    NASA Astrophysics Data System (ADS)

    Osiński, Marek; Cao, Hongjun; Liu, Chiyu; Eliseev, Petr G.

    2006-02-01

    Design, fabrication, and characterization of monolithically integrated ring diode lasers (RDLs) with relatively large size are reported. Fully functional optoelectronic integrated circuits containing integrated unidirectional RDLs, photodetectors, and coupling waveguides are demonstrated. Multiple switching of lasing direction is observed in RDL with quantum-well active regions, and an S-section or spiral absorbers are used to suppress directional switching and to obtain a more stable unidirectional operation. Unidirectionality of the RDL operation is greatly improved in lasers with quantum-dot active regions.

  9. Monolithic short wave infrared (SWIR) detector array

    NASA Technical Reports Server (NTRS)

    1983-01-01

    A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

  10. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  11. Polymeric optoelectronic interconnects

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2000-04-01

    Electrical interconnects are reaching their fundamental limits and are becoming the speed bottleneck as processor speeds are increasing. A polymer-based interconnect technology was developed for affordable integrated optical circuits that address the optical signal processing needs in the telecom, datacom, and performance computing industries. We engineered organic polymers that can be readily made into single-mode, multimode, and micro-optical waveguide structures of controlled numerical apertures and geometries. These materials are formed from highly-crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, robustness, optical loss, thermal stability, and humidity resistance. These monomers are intermiscible, providing for precise continuous adjustment of the refractive index over a wide range. In polymer form, they exhibit state-of-the-art loss values and exceptional environmental stability, enabling use in a variety of demanding applications. A wide range of rigid and flexible substrates can be used, including glass, quartz, silicon, glass-filled epoxy printed circuit board substrates, and flexible plastic films. The devices we describe include a variety of routing elements that can be sued as part of a massively parallel photonic integrated circuit on the MCM, board, or backplane level.

  12. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  13. Monolithic catalytic igniters

    NASA Technical Reports Server (NTRS)

    La Ferla, R.; Tuffias, R. H.; Jang, Q.

    1993-01-01

    Catalytic igniters offer the potential for excellent reliability and simplicity for use with the diergolic bipropellant oxygen/hydrogen as well as with the monopropellant hydrazine. State-of-the-art catalyst beds - noble metal/granular pellet carriers - currently used in hydrazine engines are limited by carrier stability, which limits the hot-fire temperature, and by poor thermal response due to the large thermal mass. Moreover, questions remain with regard to longevity and reliability of these catalysts. In this work, Ultramet investigated the feasibility of fabricating monolithic catalyst beds that overcome the limitations of current catalytic igniters via a combination of chemical vapor deposition (CVD) iridium coatings and chemical vapor infiltration (CVI) refractory ceramic foams. It was found that under all flow conditions and O2:H2 mass ratios tested, a high surface area monolithic bed outperformed a Shell 405 bed. Additionally, it was found that monolithic catalytic igniters, specifically porous ceramic foams fabricated by CVD/CVI processing, can be fabricated whose catalytic performance is better than Shell 405 and with significantly lower flow restriction, from materials that can operate at 2000 C or higher.

  14. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  15. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    NASA Astrophysics Data System (ADS)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  16. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  17. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, M.W.

    1994-06-21

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

  19. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  20. Monolithic microfluidic concentrators and mixers

    DOEpatents

    Frechet, Jean M.; Svec, Frantisek; Yu, Cong; Rohr, Thomas

    2005-05-03

    Microfluidic devices comprising porous monolithic polymer for concentration, extraction or mixing of fluids. A method for in situ preparation of monolithic polymers by in situ initiated polymerization of polymer precursors within microchannels of a microfluidic device and their use for solid phase extraction (SPE), preconcentration, concentration and mixing.

  1. Solar cells in series connection by monolithic integration

    NASA Astrophysics Data System (ADS)

    Voss, B.; Knobloch, J.; Goetzberger, A.

    Series-solar-cells by monolithic integration have been developed, using standard semiconductor technology and standard silicon wafer dimensions. The saturation open-circuit-voltage is already obtained at intensities of 0.2 - 0.4 Watt/per sq cm. These cells can be used advantageously as a voltage generator in open circuit- and optocoupler-systems because of the high reliability and longtime stability. The possibility of bifacial illumination makes such cells very suitable in combination with fluorescent collectors.

  2. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  3. Optoelectronic device for hematocrit measurements

    NASA Astrophysics Data System (ADS)

    Pluta, M.; Milewska, D.; Mazikowski, A.

    2015-09-01

    An optoelectronic system for measurements of hematocrit level (HCT) in the whole human blood is presented. Proposed system integrates a dedicated optoelectronic sensor, a microcontroller and a small LCD display in a low cost, battery-powered, handheld device. Chosen method for determining blood hematocrit level is based on optical properties of whole blood in visible and NIR wavelength range. Measurements with the use of proposed system require blood samples (small drop in the range of microliters) which is placed in the micro cuvette. Then, absorption of the sample is measured at wavelengths of 570 nm and 880 nm. Prototype of the device was build and tested. Test results confirmed proper operation of the device with correct metrological parameters in application to HCT level measurements. Such a portable device can be used as a tool of bedside diagnosis, which becomes interesting alternative to full laboratory tests.

  4. Hybridization, assembling, and testing of miniaturized optoelectronic modules for sensors and microsystems

    NASA Astrophysics Data System (ADS)

    Kopola, Harri K.; Karioja, Pentti; Rusanen, Outi; Lehto, Heikki; Lammasniemi, Jorma

    1998-03-01

    This paper presents an overview of the research and development work on packaging and manufacturing different optoelectronic modules and microsystems for spectroscopic applications at VTT Electronics. Four different spectrometer concepts are analyzed: a multiwavelength detector module, an LED array spectrometer module, a PGP-spectrograph and an IR- spectrometer on silicon. The construction, main features, packaging concepts and performance are reviewed.

  5. Packaging investigation of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhike, Zhang; Yu, Liu; Jianguo, Liu; Ninghua, Zhu

    2015-10-01

    Compared with microelectronic packaging, optoelectronic packaging as a new packaging type has been developed rapidly and it will play an essential role in optical communication. In this paper, we try to summarize the development history, research status, technology issues and future prospects, and hope to provide a meaningful reference. Project supported by the National High Technology Research and Development Program of China (Nos. 2013AA014201, 2013AA014203) and the National Natural Science Foundation of China (Nos. 61177080, 61335004, 61275031).

  6. Optoelectronic Apparatus Measures Glucose Noninvasively

    NASA Technical Reports Server (NTRS)

    Ansari, Rafat R.; Rovati, Luigi L.

    2003-01-01

    An optoelectronic apparatus has been invented as a noninvasive means of measuring the concentration of glucose in the human body. The apparatus performs polarimetric and interferometric measurements of the human eye to acquire data from which the concentration of glucose in the aqueous humor can be computed. Because of the importance of the concentration of glucose in human health, there could be a large potential market for instruments based on this apparatus.

  7. Optical waveguide formed by cubic silicon carbide on sapphire substrates

    NASA Technical Reports Server (NTRS)

    Tang, Xiao; Wongchotigul, Kobchat; Spencer, Michael G.

    1991-01-01

    Optical confinement in beta silicon carbide (beta-SiC) thin films on sapphire substrate is demonstrated. Measurements are performed on waveguides formed by the mechanical transfer of thin beta-SiC films to sapphire. Recent results of epitaxial films of SiC on sapphire substrates attest to the technological viability of optoelectronic devices made from silicon carbide. Far-field mode patterns are shown. It is believed that this is the first step in validating a silicon carbide optoelectronic technology.

  8. Optoelectronic signal processing for phased-array antennas; Proceedings of the Meeting, Los Angeles, CA, Jan. 12, 13, 1988

    NASA Astrophysics Data System (ADS)

    Bhasin, Kul B.; Hendrickson, Brian M.

    1988-01-01

    Papers are presented on fiber optic links for airborne satellite applications, optoelectronic techniques for broadband switching, and GaAs circuits for a monolithic optical controller. Other topics include the optical processing of covariance matrices for adaptive processors, an optical linear heterodyne matrix-vector processor, and an EHF fiber optic-based array. An adaptive optical signal processing architecture using a signed-digit number system is considered along with microwave fiber optic links for phased arrays.

  9. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  10. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  11. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  12. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  13. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, Thomas C.

    1993-01-01

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  14. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, T.C.

    1993-03-30

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  15. A monolithic bolometer array suitable for FIRST

    NASA Technical Reports Server (NTRS)

    Bock, J. J.; LeDuc, H. G.; Lange, A. E.; Zmuidzinas, J.

    1997-01-01

    The development of arrays of infrared bolometers that are suitable for use in the Far Infrared and Submillimeter Telescope (FIRST) mission is reported. The array architecture is based on the silicon nitride micromesh bolometer currently baselined for use in the case of the Planck mission. This architecture allows each pixel to be efficiently coupled to one or both polarizations and to one or more spatial models of radiation. Micromesh structures are currently being developed, coupled with transistor-edge sensors and read out by a SQUID amplifier. If these devices are successful, then the relatively large cooling power available at 300 mK may enable a SQUID-based multiplexer to be integrated on the same wafer as the array, creating a monolithic, fully multiplexed, 2D array with relatively few connections to the sub-Kelvin stage.

  16. Cell rotation using optoelectronic tweezers.

    PubMed

    Liang, Yuan-Li; Huang, Yuan-Peng; Lu, Yen-Sheng; Hou, Max T; Yeh, J Andrew

    2010-01-01

    A cell rotation method by using optoelectronic tweezers (OET) is reported. The binary image of a typical OET device, whose light and dark sides act as two sets of parallel plates with different ac voltages, was used to create a rotating electric field. Its feasibility for application to electrorotation of cells was demonstrated by rotating Ramos and yeast cells in their pitch axes. The electrorotation by using OET devices is dependent on the medium and cells' electrical properties, the cells' positions, and the OET device's geometrical dimension, as well as the frequency of the electric field. PMID:21267435

  17. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  18. Optoelectronic tweezers for medical diagnostics

    NASA Astrophysics Data System (ADS)

    Kremer, Clemens; Neale, Steven; Menachery, Anoop; Barrett, Mike; Cooper, Jonathan M.

    2012-01-01

    Optoelectronic tweezers (OET) allows the spatial patterning of electric fields through selected illumination of a photoconductive surface. This enables the manipulation of micro particles and cells by creating non-uniform electrical fields that then produce dielectrophoretic (DEP) forces. The DEP responses of cells differ and can produce negative or positive (repelled or attracted to areas of high electric field) forces. Therefore OET can be used to manipulate individual cells and separate different cell types from each other. Thus OET has many applications for medical diagnostics, demonstrated here with work towards diagnosing Human African Trypanosomiasis, also known as sleeping sickness.

  19. Allyl-silica Hybrid Monoliths For Chromatographic Application

    NASA Astrophysics Data System (ADS)

    Guo, Wenjuan

    procedure. Important parameters that influence the morphology of the allyl-silica hybrid material, such as the type and monomer ratio of silanes, the amount of porogenic material, the hydrolysis reaction time, the gelation temperature, the water to silicon ratio has been optimized. In addition, factors that affect the volume shrinkage including the fourth precursor, capillary filling temperature, the aging temperature and aging time and the fine tuning of PEG amount have been discussed in details. The pH stability of allyl-silica hybrid (III) monolithic column has been compared with that of TMOS monolithic column and allyl-silica hybrid (I) monolithic column. Details of the preparation, characterization and the initial chromatographic performance of the allyl-silica hybrid monolith are reported. Good peak asymmetry is obtained for the separation of basic analytes. Allyl-functionalized silica hybrid monolithic structures have also been synthesized for use in CEC, nano-LC and HPLC. The monolithic material is synthesized in a "one pot" reaction approach that provides the functionalized silica support material containing accessible allyl organic groups. The allyl and methyl moieties at the surface with significantly hydrophobic characteristics, can be used as stationary phase directly and provide chromatographic selectivity. Capillary liquid chromatography (CLC) and capillary electrochromatography (CEC) were used to demonstrate the chromatographic kinetics of the hybrid monolith. Evaluation of the stationary phase for HPLC was performed using alkylbenzene as model compounds.

  20. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  1. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    coatings have been demonstrated. In particular, co-deposited platinum, silicon, and carbon nanomaterial films were fashioned into electronic hydrogen gas sensors, cost efficient dye sensitized solar cell electrodes, and high capacity lithium ion battery anodes. Furthermore, concentrated graphene inks were coated to form aligned graphene-polymer nanocomposites and outstanding carbon nanotube-graphene hybrid semitransparent electrical conductors. Nanocomposite graphene-titanium dioxide catalysts produced from these cellulosic inks have low covalent defect densities and were shown to be approximately two and seven times more active than those based on reduced graphene oxide in photo-oxidation and photo-reduction reactions, respectively. Using a broad range of material characterization techniques, mechanistic insight was obtained using composite photocatalysts fabricated from well defined nanomaterials. For instance, optical spectroscopy and electronic measurements revealed a direct correlation between graphene charge transport performance and composite photochemical activity. Moreover, investigations into multidimensional composites based on 1D carbon nanotubes, 2D graphene, and 2D titanium dioxide nanosheets generated additional mechanistic insight for extending photocatalytic spectral response and increasing reaction specificity. Together, these results demonstrate the versatility of vacuum co-deposition and cellulosic nanomaterial inks for fabricating carbon nanocomposite optoelectronic and energy conversion coatings.

  2. Analysis and implementation of optoelectronic network routers

    NASA Astrophysics Data System (ADS)

    Raksapatcharawong, Mongkol

    1999-11-01

    Network routers based on optoelectronic technology have the potential to solve the network bandwidth problem which is becoming more and more critical in multiprocessor systems. By combining high-bandwidth optoelectronic I/O technology and high-performance CMOS logic technology, optoelectronic network routers promise both sophisticated switching functions as well as ample bandwidth that scales well with the performance of current and next-generation processors. Performance analysis and implementation of optoelectronic routers or other optoelectronic chips with this level of complexity, however, have not been pursued to a great extent before. This dissertation uses analytical and semi-empirical models to quantify and estimate the performance of optoelectronic routers at the chip and system levels, and it studies the feasibility of implementing such routers using GaAs MESFET/LED/OPFET and CMOS/SEED integrated technologies. The results show that optoelectronic routers may not only be technologically viable but also can provide certain architectural advantages in multiprocessor systems. Nevertheless, as shown in this dissertation, three major requirements must be met to effectively utilize this new technology. First, small and robust packaging at the chip and system levels that ensure high-bandwidth operation at useful interconnection distances and topologies are needed. Second, optoelectronic compatible CAD tools that effectively integrate a large array of optoelectronic devices with complex circuitry while retaining the potential performance of optoelectronic chips are needed. Third, optoelectronic devices must have uniform characteristics and reliability. In addition, advanced architectural techniques that efficiently exploit high-bandwidth optical interconnects are also required.

  3. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  4. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  5. Monolithically-integrated Young interferometers for label-free and multiplexed detection of biomolecules

    NASA Astrophysics Data System (ADS)

    Savra, Eleftheria; Malainou, Antonia; Salapatas, Alexandros; Botsialas, Athanasios; Petrou, Panagiota; Raptis, Ioannis; Makarona, Eleni; Kakabakos, Sotirios E.; Misiakos, Konstantinos

    2016-03-01

    In this work, interferometric silicon chips with monolithically-integrated light-emitting devices coupled to co-integrated monomodal waveguides shaped as Young interferometers through mainstream silicon technology, are presented. Although the light sources are broad-band emitters, Young interferometry is possible through filtering. Chips with arrays of ten multiplexed interferometers have been employed for the label-free determination of pesticides in drinking water currently achieving detection limits in the ng/ml range.

  6. Nanocrystal Optoelectronic Devices in Plasmonic Nanojunctions

    NASA Astrophysics Data System (ADS)

    Evans, Kenneth Mellinger

    Optical trapping is an important tool for studying and manipulating nanoscale objects. Recent experiments have shown that subwavelength control of nanoparticles is possible by using patterned plasmonic nanostructures, rather than using a laser directly, to generate the electric fields necessary for particle trapping. In this thesis we present a theoretical model and experimental evidence for plasmonic optical trapping in nanoscale metal junctions. Further, we examine the use of the resultant devices as ultrasmall photodectors. Electromigrated nanojunctions, or "nanogaps", have a well-established plasmon resonance in the near-IR, leading to electric field enhancements large enough for single-molecule sensitivity in Surface-Enhance Raman (SERS) measurements. While molecule-based devices have been carefully studied, optically and electrically prob- ing individual quantum dots in nanoscale metal junctions remains relatively unex- plored. Plasmon-based optical trapping of quantum dots into prefabricated struc- tures could allow for inexpensive, scalable luminescent devices which are fully integrable into established silicon-based fabrication techniques. Additionally, these metal-nanocrystal-metal structures are ideal candidates to study optoelectronics in ultrasmall nanocrystals-based structures, as well as more exotic nanoscale phenom- ena such as blinking, plasmon-exciton interactions, and surface-enhanced fluorescence (SEF). We present experimental data supporting plasmon-based optical trapping in the nanogap geometry, and a corresponding numerical model of the electric field-generated forces in the nanogap geometry. Further, we give proof-of-concept measurements of photoconductance in the resultant quantum dot-based devices, as well as challenges and improvements moving forward.

  7. Pickled luminescent silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Boukherroub, R.; Morin, S.; Wayner, D. D. M.; Lockwood, D. J.

    2001-05-01

    In freshly prepared porous Si, the newly exposed silicon-nanostructure surface is protected with a monolayer of hydrogen, which is very reactive and oxidizes in air leading to a loss of luminescence intensity and a degradation of the electronic properties. We report a surface passivation approach based on organic modification that stabilizes the luminescence. This novel 'pickling' process not only augments the desired optoelectronic properties, but also is adaptable to further chemical modification for integration into chemical and biophysical sensors.

  8. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  9. Process for strengthening silicon based ceramics

    DOEpatents

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  10. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  11. Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1

    PubMed Central

    Ping Wang, Yan; Letoublon, Antoine; Nguyen Thanh, Tra; Bahri, Mounib; Largeau, Ludovic; Patriarche, Gilles; Cornet, Charles; Bertru, Nicolas; Le Corre, Alain; Durand, Olivier

    2015-01-01

    This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm. PMID:26089763

  12. Nanostructured Thin Film Silicon Anodes for Li-Ion Microbatteries.

    PubMed

    Omampuliyur, Rajamouly S; Bhuiyan, Maruf; Han, Zheng; Jing, Zhu; Li, Lu; Fitzgerald, Eugene A; Thompson, Carl V; Choi, W K

    2015-07-01

    Thin film microbatteries require electrode materials with high areal specific capacities and good cyclability. Use of vapor-deposited silicon thin films as anodes in Li-ion microbatteries offers the advantage of high capacity as well as compatibility with other processes used for microsystem fabrication. Unfortunately, monolithic silicon films greater than 200 nm in thickness pulverize during lithiation and delithiation. We have used metal-assisted-chemical-etching of sputter-deposited amorphous silicon films to make nanoporous silicon layers and arrays of silicon nanopillars as a means of achieving anodes with high areal capacity and good cyclability. We have compared the performance of these nanostructured layers with the performance of monolithic silicon films in Li half-cells. A reduced first cycle coulombic efficiency was observed in all cases and was attributed to the irreversible formation of Li2O due to the presence of oxygen in the sputter-deposited silicon films. This was controlled through modifications of the sputtering conditions. As expected, monolithic films thicker than 200 nm showed poor cycling performance due to pulverization of the film. Nanoporous silicon showed good initial cycling performance but the performance degraded due to porosity collapse and delamination. Arrays of silicon nanopillars made from 750 nm silicon films exhibited good cycling, rate performance and an areal capacity (0.20 mA h cm(-2)) 1.6 times higher than what could be obtained with monolithic Si films with similar cyclability. PMID:26373058

  13. Mode beating and heterodyning of monolithically integrated semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Liu, Chiyu

    Monolithically integrated semiconductor ring lasers (SRLs) are attractive optical sources for optoelectronic integrated circuits (OEICs) because they do not require any feedback elements, do not have parts exposed to external ambient, and can operate in a traveling-wave mode. They are promising candidates for wavelength filtering, unidirectional traveling-wave operation, and multiplexing/demultiplexing applications. Ring lasers can also be used as ultrashort pulse generators using various mode-locking schemes and as active gyro components. However, the SRL is a very complicated dynamic system, which requires more investigations to understand the performance regarding details of the design and fabrication. As a part of NASA-supported project "Monolithically Integrated Semiconductor Ring Laser Gyro for Space Applications", this dissertation research was focused on design and characterization of a novel monolithically integrated rotation sensor based on two large-size independent SRLs. Numerical modeling based on the beam propagation method (BPM) was used to design the fabrication parameters for the single-mode ridge-waveguide ring cavity and directional coupler waveguides. The mode internal coupling in single lateral-mode laser diodes with InGaAs/GaAs material system was investigated by optical experiments and numerical modeling. To gain the understanding of the SRL performance, optical and electrical characterization was performed on fabricated SRLs. Particular emphasis was placed on the study of optical and radio frequency (RF) beating spectra of longitudinal modes of ring lasers. RF measurements provide high accuracy in the diagnosis of laser oscillation parameters by purely electronic means, particularly in the measurement of the group index and its dependence on current and temperature. Theoretical analysis based on the effective index method provides good agreement between the experimental data and numerical calculations. Finally, optical heterodyning spectra

  14. Opto-Electronic Oscillator and its Applications

    NASA Technical Reports Server (NTRS)

    Yao, X. S.; Maleki, L.

    1996-01-01

    We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.

  15. Light emission from porous silicon

    NASA Astrophysics Data System (ADS)

    Penczek, John

    The continuous evolution of silicon microelectronics has produced significant gains in electronic information processing. However, greater improvements in performance are expected by utilizing optoelectronic techniques. But these techniques have been severely limited in silicon- based optoelectronics due to the lack of an efficient silicon light emitter. The recent observation of efficient light emission from porous silicon offer a promising opportunity to develop a suitable silicon light source that is compatible with silicon microelectronics. This dissertation examined the porous silicon emission mechanism via photoluminescence, and by a novel device structure for porous silicon emitters. The investigation first examined the correlation between porous silicon formation conditions (and subsequent morphology) with the resulting photoluminescence properties. The quantum confinement theory for porous silicon light emission contends that the morphology changes induced by the different formation conditions determine the optical properties of porous silicon. The photoluminescence spectral shifts measured in this study, in conjunction with TEM analysis and published morphological data, lend support to this theory. However, the photoluminescence spectral broadening was attributed to electronic wavefunction coupling between adjacent silicon nanocrystals. An novel device structure was also investigated in an effort to improve current injection into the porous silicon layer. The selective etching properties of porous silicon were used to create a p-i-n structure with crystalline silicon contacts to the porous silicon layer. The resulting device was found to have unique characteristics, with a negative differential resistance region and current-induced emission that spanned from 400 nm to 5500 nm. The negative differential resistance was correlated to resistive heating effects in the device. A numerical analysis of thermal emission spectra from silicon films, in addition to

  16. Radiation effects in optoelectronic devices. [Review

    SciTech Connect

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

  17. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  18. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  19. Monolithic CMOS imaging x-ray spectrometers

    NASA Astrophysics Data System (ADS)

    Kenter, Almus; Kraft, Ralph; Gauron, Thomas; Murray, Stephen S.

    2014-07-01

    The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff is developing monolithic CMOS detectors optimized for x-ray astronomy. The goal of this multi-year program is to produce CMOS x-ray imaging spectrometers that are Fano noise limited over the 0.1-10keV energy band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation "hardness", high levels of integration, and very high read rates. Small format test devices from a previous wafer fabrication run (2011-2012) have recently been back-thinned and tested for response below 1keV. These devices perform as expected in regards to dark current, read noise, spectral response and Quantum Efficiency (QE). We demonstrate that running these devices at rates ~> 1Mpix/second eliminates the need for cooling as shot noise from any dark current is greatly mitigated. The test devices were fabricated on 15μm, high resistivity custom (~30kΩ-cm) epitaxial silicon and have a 16 by 192 pixel format. They incorporate 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels which have ~40μV/electron sensitivity and a highly parallel analog CDS signal chain. Newer, improved, lower noise detectors have just been fabricated (October 2013). These new detectors are fabricated on 9μm epitaxial silicon and have a 1k by 1k format. They incorporate similar 16μm pitch, 6TPPD pixels but have ~ 50% higher sensitivity and much (3×) lower read noise. These new detectors have undergone preliminary testing for functionality in Front Illuminated (FI) form and are presently being prepared for back thinning and packaging. Monolithic CMOS devices such as these, would be ideal candidate detectors for the focal planes of Solar, planetary and other space-borne x-ray astronomy missions. The high through-put, low noise and excellent low energy response, provide high dynamic range and good time resolution; bright, time varying x-ray features could be temporally and

  20. In situ Fabrication of Monolithic Copper Azide

    NASA Astrophysics Data System (ADS)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  1. Special Issue: The Silicon Age

    NASA Astrophysics Data System (ADS)

    Kittler, Martin; Yang, Deren

    2006-03-01

    The present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono- and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro- and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino-German symposium held in Cottbus, Germany, 19-24 September 2005.The cover picture shows four examples of The Silicon Age: the structure of a thin film solar cell on low-cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high-resolution transmission electron microscopy image and diffraction pattern of a single-crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n-type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].

  2. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  3. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  4. OLED-on-CMOS integration for optoelectronic sensor applications

    NASA Astrophysics Data System (ADS)

    Vogel, Uwe; Kreye, Daniel; Reckziegel, Sven; Törker, Michael; Grillberger, Christiane; Amelung, Jörg

    2007-02-01

    Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon- CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices.

  5. Polymer light harvesting composites for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Sun, Sam-Shajing; Wang, Dan

    2015-09-01

    Polymer based optoelectronic composites and thin film devices exhibit great potential in space applications due to their lightweight, flexible shape, high photon absorption coefficients, and robust radiation tolerance in space environment. Polymer/dye composites appear promising for optoelectronics applications due to potential enhancements in both light harvesting and charge separation. In this study, the optoelectronic properties of a series of molecular dyes paired with a conjugated polymer Poly(3-hexylthiophene-2,5-diyl) (P3HT) were investigated. Specifically, the solution PL quenching coefficients (Ksv) of dye/polymer follows a descending order from dyes of Chloro(protoporphyrinato)iron(III) (Hemin), Protoporphyrin, to meso-Tetra(4-carboxyphenyl)porphine (TCPP). In optoelectronic devices made of the P3HT/dye/PCBM composites, the short circuit current densities Jsc as well as the overall power conversion efficiencies (PCE) also follow a descending order from Hemin, Protoporphyrin, to TCPP, despite Hemin exhibits the intermediate polymer/dye LUMO (lowest unoccupied molecular orbital) offset and lowest absorption coefficient as compared to the other two dyes, i.e., the cell optoelectronic efficiency did not follow the LUMO offsets which are the key driving forces for the photo induced charge separations. This study reveals that too large LUMO offset or electron transfer driving force may result in smaller PL quenching and optoelectronic conversion efficiency, this could be another experimental evidence for the Marcus electron transfer model, particularly for the Marcus `inverted region'. It appears an optimum electron transfer driving force or strong PL quenching appears more critical than absorption coefficient for optoelectronic conversion devices.

  6. Fracture Toughness in Advanced Monolithic Ceramics - SEPB Versus SEVENB Methods

    NASA Technical Reports Server (NTRS)

    Choi, S. R.; Gyekenyesi, J. P.

    2005-01-01

    Fracture toughness of a total of 13 advanced monolithic ceramics including silicon nitrides, silicon carbide, aluminas, and glass ceramic was determined at ambient temperature by using both single edge precracked beam (SEPB) and single edge v-notched beam (SEVNB) methods. Relatively good agreement in fracture toughness between the two methods was observed for advanced ceramics with flat R-curves; whereas, poor agreement in fracture toughness was seen for materials with rising R-curves. The discrepancy in fracture toughness between the two methods was due to stable crack growth with crack closure forces acting in the wake region of cracks even in SEVNB test specimens. The effect of discrepancy in fracture toughness was analyzed in terms of microstructural feature (grain size and shape), toughening exponent, and stable crack growth determined using back-face strain gaging.

  7. Two-dimensional optical scanner with monolithically integrated glass microlens

    NASA Astrophysics Data System (ADS)

    Yoo, Sunghyun; Jin, Joo-Young; Ha, Joon-Geun; Ji, Chang-Hyeon; Kim, Yong-Kweon

    2014-05-01

    A miniaturized two-dimensional forward optical scanner with a monolithically integrated glass microlens was developed for microendoscopic imaging applications. The fabricated device measures 2.26 × 1.97 × 0.62 mm3 in size and a through-silicon microlens with a diameter of 400 µm and numerical aperture of 0.37 has been successfully integrated within the silicon layer. An XY stage structure with lens shuttle and comb actuators was designed, and proprietary glass isolation blocks were utilized in mechanical and electric isolation of X- and Y-axis actuators. Resonant frequencies of the stage in X and Y directions were 3.238 and 2.198 kHz and quality factors were 168 and 69.1, respectively, at atmospheric pressure. Optical scanning test has been performed and scan angles of ±4.7° and ±4.9° were achieved for X and Y directions, respectively.

  8. Monolithic active pixel radiation detector with shielding techniques

    DOEpatents

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  9. A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode.

    PubMed

    Romeira, Bruno; Seunarine, Kris; Ironside, Charles N; Kelly, Anthony E; Figueiredo, José M L

    2011-08-15

    We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below -100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

  10. A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

    PubMed Central

    Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

    2013-01-01

    We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452