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Sample records for multi-nanolayer structures grown

  1. Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

    SciTech Connect

    Makarov, Vladimir I.; Khmelinskii, Igor

    2015-04-15

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

  2. Structure and growth process of vapor-grown carbon fibers

    NASA Technical Reports Server (NTRS)

    Koyama, T.; Endo, M.

    1983-01-01

    The structure, effect of heat, and growth process of vapor-grown carbon fibers are investigated. The growth process of the carbon fibers could be divided into three stages; nucleation, elongation, and thickening processes. Also, a multi-layered structure can be produced as well as graphitization.

  3. Superlattice structures grown by metalorganic MBE

    NASA Astrophysics Data System (ADS)

    Tokumitsu, E.; Katoh, T.; Sung, C. P.; Sandhu, A.; Kimura, R.; Konagai, M.; Takahashi, K.

    1986-08-01

    The metalorganic molecular beam epitaxial (MOMBE) growth of GaAs and (GaAl)As using triethylgallium (TEG) and triethylaluminum (TEA) has been studied. GaAs/GaAlAs multi quantum well (MQW) heterostructures were fabricated and it was found that the photoluminescence peak energy at room temperature agreed with calculated values. Furthermore, a new technique to grow a nipi superlattice structure was proposed and as a trial growth a n-GaAs/n +-GaAs multilayer was prepared by applying an alternating ionization voltage to hydrogen.

  4. Structure property relationships of carbonaceous films grown under ion enhancement

    SciTech Connect

    Weissmantel, C.; Ackermann, E.; Bewilogua, K.; Hecht, G.; Kupfer, H.; Rau, B.

    1986-11-01

    Based on our own results and in comparison with data published by other groups the structure property relationships of carbon and carbon/metal films prepared by sputtering and deposition of partially ionized species are discussed. Films grown by ion beam sputtering are dark brownish and amorphous with a small fraction of microcrystals. However, a transition to transparent and insulating layers can be effected by ion bombardment. C/Me coatings, where Me stands for Ti or Sn, were obtained by magnetron sputtering of composite targets. The films proved to be amorphous up to metal concentrations of more than 10 at. %, but metal and carbide crystals grow upon annealing. Measurements of the hardness, the electrical conductivity, and the contact behavior in dependence on the composition provided interesting information. For carbon films prepared by deposition of partially ionized benzene species it has been found that the properties depend characteristically on the ion energy; typical ''diamondlike'' i-C films are obtained by applying a bias voltage from 1--3 keV. The thermal stability of the amorphous coatings is discussed in conjunction with their electrical conductivity. Summarizing extensive structure investigations, a structure model based on tetrahedrally interlinked carbon rings is proposed. Composites of the type i-C/Me (Me: Al, Ti, Cr), which were prepared by simultaneous metal evaporation, exhibit a wide range of structure property relations.

  5. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

    NASA Astrophysics Data System (ADS)

    Cohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi

    2011-06-01

    We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

  6. Crystal structure of thin oxide films grown on Zr-Nb alloys studied by RHEED

    NASA Astrophysics Data System (ADS)

    Khatamian, D.; Lalonde, S. D.

    1997-05-01

    The highly surface sensitive reflection high energy electron diffraction (RHEED) technique was used to determine thecrystal structure of oxide films grown on Zr-Nb alloys in air up to 673 K. The results show that the oxide films grown on Zr-2.5 wt% Nb(α-Zr + β-Zr) have a mixture of nearly-cubic-tetragona and monoclinic structures for films of 200 nm thick or less and that the outer layers of films thicker than 800 nm only have the monoclinic crystal structure. However, oxide films grown on Zr-20 wt% Nb (β-Zr) have a stabilized nearly-cubic-tetragonal structure for all film thicknesses, studied here, up to 2100 nm.

  7. Structure of a randomly grown 2-d network.

    PubMed

    Ajazi, Fioralba; Napolitano, George M; Turova, Tatyana; Zaurbek, Izbassar

    2015-10-01

    We introduce a growing random network on a plane as a model of a growing neuronal network. The properties of the structure of the induced graph are derived. We compare our results with available data. In particular, it is shown that depending on the parameters of the model the system undergoes in time different phases of the structure. We conclude with a possible explanation of some empirical data on the connections between neurons. PMID:26375356

  8. Hierarchical tubular structures grown from the gel/liquid interface.

    PubMed

    Steenbjerg Ibsen, Casper Jon; Mikladal, Bjørn Fridur; Bjørnholt Jensen, Uffe; Birkedal, Henrik

    2014-12-01

    Three dimensional hierarchical materials are widespread in nature but are difficult to synthesize by using self-assembly/organization. Here, we employ a gel-liquid interface to obtain centimeter-long ∼100 μm diameter tubes with complex mineral wall structures that grow from the interface into solution. The gel, made from gelatin, is loaded with metal chloride salt, whereas the solution is a high pH anion source. Tubes were obtained with a range of cations (Ca(2+) , Sr(2+) , Ba(2+) , Cu(2+) , and Zn(2+) ) and anions (CO3 (2-) and PO4 (3-) ). The crystalline phases found in the tube walls corresponded to expectations from solution chemistries and phase solubilities. The growth mechanism is found to be akin to that of chemical gardens. The divalent cations modify the strength of the gelatin gel in a manner that involves not only simple electrostatic screening, but also ion-specific effects. Thus, tubes were not obtained for those ions and/or concentrations that significantly changed the gel's mechanical structure. At high Cu(2+) loading, for example, vertical convection bands, not Liesegang bands, were observed in the gels. PMID:25336024

  9. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    PubMed

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec. PMID:26625884

  10. Epitaxial Structure of (001)- and (111)-Oriented Perovskite Ferrate Films Grown by Pulsed-Laser Deposition.

    PubMed

    Chakraverty, Suvankar; Ohtomo, Akira; Okude, Masaki; Ueno, Kazunori; Kawasaki, Masashi

    2010-04-01

    The epitaxial structures of SrFeO(2.5) films grown on SrTiO(3) (001) and (111) substrates by PLD are reported. A layer-by-layer growth mode was achieved in the initial stage on both substrates. The films were stabilized with a monoclinic structure, where we identified the in-plane domain structures and orientation relationship. Our study presents a guide to control the heteroepitaxy of (111)-oriented noncubic perovskites. PMID:20383295

  11. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  12. Optically addressed spatial light modulators by MBE-grown nipi MQW structures

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph; Andersson, P. O.; Hancock, B. R.; Iannelli, J. M.; Eng, S. T.; Grunthaner, F. J.

    1989-01-01

    Promising approaches for achieving optically addressed spatial light modulators (O-SLMs) are investigated based on combining nipi and multiple quantum well structures. Theoretical aspects of photooptic effects achievable in such structures are treated. Test structures are grown by molecular beam epitaxy using two material systems. (In,Ga)As/GaAs and (Al,Ga)As/GaAs. Experiments show large optically controlled modulation of the absorption coefficient in the quantum well layers, a log power dependence on the control signal, millisecond and shorter time response, and generally predictable behavior. The results are encouraging for several different O-SLM device structures proposed.

  13. Atomic structure of "multilayer silicene" grown on Ag(111): Dynamical low energy electron diffraction analysis

    NASA Astrophysics Data System (ADS)

    Kawahara, Kazuaki; Shirasawa, Tetsuroh; Lin, Chun-Liang; Nagao, Ryo; Tsukahara, Noriyuki; Takahashi, Toshio; Arafune, Ryuichi; Kawai, Maki; Takagi, Noriaki

    2016-09-01

    We have investigated the atomic structure of the "multilayer silicene" grown on the Ag(111) single crystal surface by using low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). We measured the intensity of the LEED spot as a function of the incident electron energy (I-V curve) and analyzed the I-V curve using a dynamical LEED theory. We have found that the Si(111)(√{ 3} ×√{ 3})-Ag model well reproduces the I-V curve whereas the models consisting of the honeycomb structure of Si do not. The bias dependence of the STM image of multilayer silicene agrees with that of the Si(111)(√{ 3} ×√{ 3})-Ag reconstructed surface. Consequently, we have concluded that the multilayer silicene grown on Ag(111) is identical to the Si(111)(√{ 3} ×√{ 3})-Ag reconstructed structure.

  14. Enhanced terahertz emission from a multilayered low temperature grown GaAs structure

    NASA Astrophysics Data System (ADS)

    Rihani, Samir; Faulks, Richard; Beere, Harvey E.; Farrer, Ian; Evans, Michael; Ritchie, David A.; Pepper, Michael

    2010-03-01

    We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10×10 μm2 mesa defined photoconductive gaps were fabricated on the multilayered structure, and a comparison made to conventional planar devices. The mesa defined photoconductive antennas allowed successive contact through the multilayered structure, which resulted in an increase in THz emission power and detection responsivity with increasing number of layers in contact with the antenna electrodes. A comparison with a conventional single layered device, processed in an identical mesa geometry, confirmed that the enhancement in THz emission is solely due to the multilayered nature of the device, whereas the improved receiver performance can be partially attributed to the mesa geometry.

  15. Defect structure of a free standing GaN wafer grown by the ammonothermal method

    NASA Astrophysics Data System (ADS)

    Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri; Lipsanen, Harri; Tuomi, Turkka O.; Letts, Edward; Hoff, Sierra; Hashimoto, Tadao

    2014-11-01

    White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8×104 cm-2 and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed.

  16. Ga/1-x/Al/x/As LED structures grown on GaP substrates.

    NASA Technical Reports Server (NTRS)

    Woodall, J. M.; Potemski, R. M.; Blum, S. E.; Lynch, R.

    1972-01-01

    Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

  17. Structural analysis of infinite layer superlattices grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Del Vecchio, A.; Tapfer, L.; Aruta, C.; Balestrino, G.; Petrocelli, G.

    1996-07-01

    In this work we investigate the structural properties of SrCuO2/CaCuO2 infinite layer superlattices by high-resolution x-ray diffraction and x-ray specular reflectivity measurements. The infinite layer superlattices are grown by pulsed laser deposition on slightly misoriented (001) SrTiO3 substrates. We demonstrate that good quality superlattices with few monolayers thick constituent SrCuO2 and CaCuO2 layers can be grown having an interface roughness of less than 3-4 Å. A strain analysis of the epitaxial film shows that the SrCuO2 layers are completely relaxed with respect to the substrate. However, the CaCuO2 layers are elastically strained with respect to the SrCuO2 layer. The Poisson ratio of the CaCuO2 is estimated to be 0.40±0.08.

  18. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  19. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  20. Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

    SciTech Connect

    Bennett, Samantha E.; Humphreys, Colin J.; Oliver, Rachel A.; Smeeton, Tim M.; Hooper, Stewart E.; Heffernan, Jonathan; Saxey, David W.; Smith, George D. W.

    2012-03-01

    Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode (LD) structure grown by molecular beam epitaxy (MBE). Four APT data sets have been obtained, with fields of view up to 400 nm in depth and 120 nm in diameter. These data sets contain material from the InGaN quantum well (QW) active region, as well as the surrounding p- and n-doped waveguide and cladding layers, enabling comprehensive study of the structure and composition of the LD structure. Two regions of the same sample, with different average indium contents (18% and 16%) in the QW region, were studied. The APT data are shown to provide easy access to the p-type dopant levels, and the composition of a thin AlGaN barrier layer. Next, the distribution of indium within the InGaN QW was analyzed, to assess any possible inhomogeneity of the distribution of indium (''indium clustering''). No evidence for a statistically significant deviation from a random distribution was found, indicating that these MBE-grown InGaN QWs do not require indium clusters for carrier localization. However, the APT data show steps in the QW interfaces, leading to well-width fluctuations, which may act to localize carriers. Additionally, the unexpected presence of a small amount (x = 0.005) of indium in a layer grown intentionally as GaN was revealed. Finally, the same statistical method applied to the QW was used to show that the indium distribution within a thick InGaN waveguide layer in the n-doped region did not show any deviation from randomness.

  1. Synthesis, crystal growth, structural, thermal, optical and mechanical properties of solution grown 4-methylpyridinium 4-hydroxybenzoate single crystal.

    PubMed

    Sudhahar, S; Krishna Kumar, M; Sornamurthy, B M; Mohan Kumar, R

    2014-01-24

    Organic nonlinear optical material, 4-methylpyridinium 4-hydroxybenzoate (4MPHB) was synthesized and single crystal was grown by slow evaporation solution growth method. Single crystal and powder X-ray diffraction analyses confirm the structure and crystalline perfection of 4MPHB crystal. Infrared, Raman and NMR spectroscopy techniques were used to elucidate the functional groups present in the compound. TG-DTA analysis was carried out in nitrogen atmosphere to study the decomposition stages, endothermic and exothermic reactions. UV-visible and Photoluminescence spectra were recorded for the grown crystal to estimate the transmittance and band gap energy respectively. Linear refractive index, birefringence, and SHG efficiency of the grown crystal were studied. Laser induced surface damage threshold and mechanical properties of grown crystal were studied to assess the suitability of the grown crystals for device applications. PMID:24184578

  2. MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

    NASA Astrophysics Data System (ADS)

    Richards, Robert D.; Bastiman, Faebian; Roberts, John S.; Beanland, Richard; Walker, David; David, John P. R.

    2015-09-01

    A series of GaAsBi/GaAs multiple quantum well p-i-n diodes were grown by molecular beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode, with an increase in the cross-hatching associated with strain relaxation for the diodes containing more than 40 quantum wells. X-ray diffraction ω-2θ scans of the (004) reflections showed that multiple quantum well regions with clearly defined well periodicities were grown. The superlattice peaks of the diodes containing more than 40 wells were much broader than those of the other diodes. The photoluminescence spectra showed a redshift of 56 meV and an attenuation of nearly two orders of magnitude for the 54 and 63 well diodes. Calculations of the quantum confinement and strain induced band gap modifications suggest that the wells in all diodes are thinner than their intended widths and that both loss of quantum confinement and strain probably contributed to the observed redshift and attenuation in the 54 and 63 well diodes. Comparison of this data with that gathered for InGaAs/GaAs multiple quantum wells, suggests that the onset of relaxation occurs at a similar average strain-thickness product for both systems. Given the rapid band gap reduction of GaAsBi with Bi incorporation, this data suggests that GaAsBi is a promising photovoltaic material candidate.

  3. A pipeline for structure determination of in vivo-grown crystals using in cellulo diffraction.

    PubMed

    Boudes, Marion; Garriga, Damià; Fryga, Andrew; Caradoc-Davies, Tom; Coulibaly, Fasséli

    2016-04-01

    While structure determination from micrometre-sized crystals used to represent a challenge, serial X-ray crystallography on microfocus beamlines at synchrotron and free-electron laser facilities greatly facilitates this process today for microcrystals and nanocrystals. In addition to typical microcrystals of purified recombinant protein, these advances have enabled the analysis of microcrystals produced inside living cells. Here, a pipeline where crystals are grown in insect cells, sorted by flow cytometry and directly analysed by X-ray diffraction is presented and applied to in vivo-grown crystals of the recombinant CPV1 polyhedrin. When compared with the analysis of purified crystals, in cellulo diffraction produces data of better quality and a gain of ∼0.35 Å in resolution for comparable beamtime usage. Importantly, crystals within cells are readily derivatized with gold and iodine compounds through the cellular membrane. Using the multiple isomorphous replacement method, a near-complete model was autobuilt from 2.7 Å resolution data. Thus, in favourable cases, an in cellulo pipeline can replace the complete workflow of structure determination without compromising the quality of the resulting model. In addition to its efficiency, this approach maintains the protein in a cellular context throughout the analysis, which reduces the risk of disrupting transient or labile interactions in protein-protein or protein-ligand complexes. PMID:27050136

  4. Structural and Magnetic Characterization of EuTe/SnTe Superlattices Grown by Molecular Beam Epitaxy

    SciTech Connect

    Diaz, B.; Abramof, E.; Rappl, P. H. O.; Granado, E.; Chitta, V. A.; Henriques, A. B.; Oliveira, N. F. Jr.

    2010-01-04

    Here we investigate the structural and magnetic properties of 24 repetitions EuTe/SnTe superlattices (SLs), with 3 monolayers (ML) EuTe films and SnTe thicknesses between 13 and 36 ML. The SLs were grown by molecular beam epitaxy on 3 {mu}m SnTe buffer layers, grown on top of (111)BaF{sub 2} substrates. High resolution x-ray diffraction measurements indicated that the SLs with thicker SnTe layers have higher structural quality. This is due to the SnTe growth mode on EuTe, which starts in islands and evolves to layer-by-layer. The magnetic diffraction peak observed for the higher quality SLs proved the existence of antiferromagnetic order within the individual EuTe layers. Decreasing the width of the non-magnetic SnTe layers resulted in rougher interfaces, and the fading of the magnetic peak signal. The magnetization versus applied field curves indicated that the magnetic moments of SLs with thinner SnTe layers were also harder to align along the field direction. We interpret our results considering the loss of Eu neighbors, related with the increasing roughness of the SL interfaces.

  5. A pipeline for structure determination of in vivo-grown crystals using in cellulo diffraction

    PubMed Central

    Boudes, Marion; Garriga, Damià; Fryga, Andrew; Caradoc-Davies, Tom; Coulibaly, Fasséli

    2016-01-01

    While structure determination from micrometre-sized crystals used to represent a challenge, serial X-ray crystallography on microfocus beamlines at synchrotron and free-electron laser facilities greatly facilitates this process today for microcrystals and nanocrystals. In addition to typical microcrystals of purified recombinant protein, these advances have enabled the analysis of microcrystals produced inside living cells. Here, a pipeline where crystals are grown in insect cells, sorted by flow cytometry and directly analysed by X-ray diffraction is presented and applied to in vivo-grown crystals of the recombinant CPV1 polyhedrin. When compared with the analysis of purified crystals, in cellulo diffraction produces data of better quality and a gain of ∼0.35 Å in resolution for comparable beamtime usage. Importantly, crystals within cells are readily derivatized with gold and iodine compounds through the cellular membrane. Using the multiple isomorphous replacement method, a near-complete model was autobuilt from 2.7 Å resolution data. Thus, in favourable cases, an in cellulo pipeline can replace the complete workflow of structure determination without compromising the quality of the resulting model. In addition to its efficiency, this approach maintains the protein in a cellular context throughout the analysis, which reduces the risk of disrupting transient or labile interactions in protein–protein or protein–ligand complexes. PMID:27050136

  6. Structure and transport properties of the interface between CVD-grown graphene domains.

    PubMed

    Ogawa, Yui; Komatsu, Katsuyoshi; Kawahara, Kenji; Tsuji, Masaharu; Tsukagoshi, Kazuhito; Ago, Hiroki

    2014-07-01

    During the chemical vapor deposition (CVD) growth of graphene, graphene domains grown on a Cu surface merge together and form a uniform graphene sheet. For high-performance electronics and other applications, it is important to understand the interfacial structure of the merged domains, as well as their influence on the physical properties of graphene. We synthesized large hexagonal graphene domains with controlled orientations on a heteroepitaxial Cu film and studied the structure and properties of the interfaces between the domains mainly merged with the same angle. Although the merged domains have various interfaces with/without wrinkles and/or increased defect-related Raman D-band intensity, the intra-domain transport showed higher carrier mobility reaching 20,000 cm(2) V(-1) s(-1) on SiO2 at 280 K (the mean value was 7200 cm(2) V(-1) s(-1)) than that measured for inter-domain areas, 6400 cm(2) V(-1) s(-1) (mean value 2000 cm(2) V(-1) s(-1)). The temperature dependence of the mobility suggests that impurity scattering dominates at the interface even for the merged domains with the same orientation. This study highlights the importance of domain interfaces, especially on the carrier transport properties, in CVD-grown graphene. PMID:24847777

  7. Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

    SciTech Connect

    Buchowicz, G.; Stone, P.R.; Robinson, J.T.; Cress, C.D.; Beeman, J.W.; Dubon, O.D.

    2010-11-04

    Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 1012 cm-2 to 1015 cm-2 indicate that the structure of graphene evolves from a highly-ordered layer, to a patchwork of disordered domains, to an essentially amorphous film. These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1x1013 cm-2. A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1x1014 cm-2.

  8. Structural and optical characterization of MOCVD-grown ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pagni, O.; James, G. R.; Leitch, A. W. R.

    2004-03-01

    We report on the characterization of ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Substrate temperature proved to be a crucial factor in the crystallization process, as it vastly impacted the structural properties of the samples studied. Highly c-axis oriented films with large grain size (52 nm), low tensile strain (0.6%), uniform substrate coverage and a columnar structure devoid of hexagonal needles were successfully deposited on n-Si (100) substrates. The temperature-dependent luminescence spectra recorded confirmed the excellent quality of the material obtained in this work. Our results so far set TBOH apart as an outstanding oxygen source for the MOCVD growth of ZnO.

  9. Structural properties and gas sensing behavior of sol-gel grown nanostructured zinc oxide

    NASA Astrophysics Data System (ADS)

    Rajyaguru, Bhargav; Gadani, Keval; Rathod, K. N.; Solanki, Sapana; Kansara, S. B.; Pandya, D. D.; Shah, N. A.; Solanki, P. S.

    2016-05-01

    In this communication, we report the results of the studies on structural properties and gas sensing behavior of nanostructured ZnO grown using acetone precursor based modified sol-gel technique. Final product of ZnO was sintered at different temperatures to vary the crystallite size while their structural properties have been studied using X-ray diffraction (XRD) measurement performed at room temperature. XRD results suggest the single phasic nature of all the samples and crystallite size increases from 11.53 to 20.96nm with increase in sintering temperature. Gas sensing behavior has been studied for acetone gas which indicates that lower sintered samples are more capable to sense the acetone gas and related mechanism has been discussed in the light of crystallite size, crystal boundary density, defect mechanism and possible chemical reaction between gas traces and various oxygen species.

  10. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    NASA Astrophysics Data System (ADS)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  11. Surface Structure of Kio (3) Grown By Heterogeneous Reaction of Ozone With Ki (001)

    SciTech Connect

    Brown, M.A.; Liu, Z.; Ashby, P.D.; Mehta, A.; Grimm, R.L.; Hemminger, J.C.

    2009-05-12

    The crystal structure of KIO{sub 3} grown by heterogeneous surface oxidation of KI (001) with ozone is reported. Under ambient reaction conditions (RH {approx}35%, room temperature) a thick layer of KIO{sub 3} grows at the gas-solid interface. Two doublets are present in the I(4d) X-ray photoelectron spectroscopy structure measurements, characteristic of unreacted KI (I{sup -}) from the substrate and the oxidized KIO{sub 3} (I{sup 5+}) reaction product. X-ray diffraction measurements confirm the presence at the interface of randomly oriented polycrystalline-triclinic KIO{sub 3} with an average particle diameter of 15 nm. KIO{sub 3} particle diameters determined from the X-ray diffraction peak widths are consistent with the results of atomic force microscopy. There is no X-ray powder diffraction evidence to suggest that the underlying KI substrate is altered in any manner during this heterogeneous interfacial reaction.

  12. Structural features of Ge(Ga) single crystals grown by the floating zone method in microgravity

    NASA Astrophysics Data System (ADS)

    Prokhorov, I. A.; Zakharov, B. G.; Senchenkov, A. S.; Egorov, A. V.; Camel, D.; Tison, P.

    2008-11-01

    Structural features of the Ge(Ga) single crystal grown by the floating zone (FZ) method in microgravity environment aboard the FOTON-9 spacecraft are investigated by methods of X-ray topography, double-crystal diffractometry, selective chemical etching and spreading resistance measurements. It is established that the crystal structure is characterized by the presence of an incompletely melted region and defects caused by its formation. Growth striations revealed in regrown part of the crystal, testify to development of non-stationary capillary Marangoni convection in melt at the realized parameters of FZ remelting under space conditions. Periodicity of the growth striations is compared to frequency characteristics of heat flux pulsations through the crystallization front, found as a result of numerical simulation of melt hydrodynamics.

  13. Structural characterization of nanostructures grown by Ni metal induced lateral crystallization of amorphous-Si

    NASA Astrophysics Data System (ADS)

    Radnóczi, G. Z.; Dodony, E.; Battistig, G.; Vouroutzis, N.; Kavouras, P.; Stoemenos, J.; Frangis, N.; Kovács, A.; Pécz, B.

    2016-02-01

    The nickel metal induced lateral crystallization of amorphous silicon is studied by transmission electron microscopy in the range of temperatures from 413 to 521 °C. The structural characteristics of the whiskers grown at 413 °C are compared to the grains grown at 600 °C, where both Metal Induced Lateral Crystallization (MILC) and Solid Phase Crystallization (SPC) are involved. At 413 °C, long whiskers are formed at any crystallographic direction almost free of defects. In contrary, whiskers grown by MILC around 600 °C are crystallized along the ⟨111⟩ directions. These differences are attributed to the low crystallization rate and suppression of the SPC process. The activation energy of the pure MILC was measured in the order of 2 eV. The effect of Ni on the crystallization rate is studied by in-situ heating experiments inside the microscope. The role of contamination that can inhibit MILC is discussed. The cases of MILC process under limited Ni and unlimited Ni source were studied and compared to in-situ annealing experiments. The crystallization rate is strongly influenced by the neighbouring Ni sources; this long-range interaction is attributed to the requirement of a critical Ni concentration in amorphous silicon before the initiation of the MILC process. The long-range interaction can enhance crystallization along a certain direction. The transition from MILC to SPC and the change of the crystallization mode due to the lack of Ni are discussed. The beneficial effect of long annealing at 413 °C is also discussed.

  14. CdTe-Cd1 - xMnxTe multiple quantum well structures grown by pulsed laser evaporation and epitaxy

    NASA Astrophysics Data System (ADS)

    Dubowski, J. J.; Roth, A. P.; Wasilewski, Z. R.; Rolfe, S. J.

    1991-09-01

    Structural and optical properties of (001) CdTe-Cd1-xMnxTe (x=0.10) multiple quantum well structures grown by pulsed laser evaporation and epitaxy (PLEE) are investigated. The layers are grown on (001) CdZnTe wafers held at a temperature in the range of 210-230 °C. Secondary-ion mass spectroscopy in-depth profiles reveal that highly uniform structures are grown. Numerical analysis of double crystal x-ray diffraction results demonstrates high structural quality of the layers and indicates partial relaxation of the strain in these structures. Low-temperature photoluminescence exhibits excitonic recombinations in the CdTe wells whereas photoluminescence from the Cd1-xMnxTe barriers is not observed. The chemical composition of the barriers deduced from photoluminescence is in excellent agreement with the intended chemical composition set during growth.

  15. Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature

    NASA Astrophysics Data System (ADS)

    Przeździecka, E.; Wachnicki, Ł.; Paszkowicz, W.; Łusakowska, E.; Krajewski, T.; Łuka, G.; Guziewicz, E.; Godlewski, M.

    2009-10-01

    We report the first results of the low-temperature photoluminescence study on polycrystal zinc oxide (ZnO) films obtained by atomic layer deposition at 100 °C, 130 °C and 200 °C. These ZnO films, when studied 'as-grown', show a strong excitonic emission even at room temperature. Low-temperature (T = 9 K) photoluminescence reveals lack of defect-related bands and a sharp photoluminescence peak at 3.36 eV with full width at half maximum of 6 meV which is comparable with the value reported for good quality bulk ZnO crystals. The energy position of the excitonic peak scales with temperature according to standard formulas and give the Debye temperature of 963 ± 26 K. We show that optical properties of low-temperature 'as-grown' ZnO films are correlated with structural and electrical ones and that optical study can be a valuable tool for evaluation of quality of ZnO films for novel electronic applications.

  16. Plant growth and soil microbial community structure of legumes and grasses grown in monoculture or mixture.

    PubMed

    Chen, Meimei; Chen, Baodong; Marschner, Petra

    2008-01-01

    A greenhouse pot experiment was conducted to investigate the influence of soil moisture content on plant growth and the rhizosphere microbial community structure of four plant species (white clover, alfalfa, sudan grass, tall fescue), grown individually or in a mixture. The soil moisture content was adjusted to 55% or 80% water holding capacity (WHC). The results indicated that the total plant biomass of one pot was lower at 55% WHC. At a given soil moisture, the total plant biomass of white clover and tall fescue in the mixture was lower than that in a monoculture, indicating their poor competitiveness. For leguminous plants, the decrease in soil moisture reduced the total microbial biomass, bacterial biomass, fungal biomass, and fungal/bacterial ratio in soil as assessed by the phospholipid fatty acid analysis, whereas, lower soil moisture increased those parameters in the tall fescue. The microbial biomass in the soil with legumes was higher than that in the soil with grasses and the two plant groups differed in soil microbial community composition. At high soil moisture content, microbial communities of the plant mixture were similar to those of the legume monoculture, and the existence of legumes in the mixture enhanced the bacterial and fungal biomass in the soil compared to the grasses grown in the monoculture, indicating that legumes played a dominant role in the soil microbial community changes in the plant mixture. PMID:19143348

  17. Structural Defects in Laterally Overgrown GaN Layers Grown onNon-polar Substrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2007-02-14

    Transmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (11{und 2}0) GaN grown on (1{und 1}02) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

  18. Interface structure of epitaxial graphene grown on 4H-SiC(0001)

    SciTech Connect

    Hass, J.; Millán-Otoya, J.E.; First, P.N.; Conrad, E.H.

    2009-06-12

    We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer ({approx}1.7 {angstrom} compared to 0.63 {angstrom}). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000{bar 1}) surface, as predicted previously by ab initio calculations.

  19. Structure and transport properties of the interface between CVD-grown graphene domains

    NASA Astrophysics Data System (ADS)

    Ogawa, Yui; Komatsu, Katsuyoshi; Kawahara, Kenji; Tsuji, Masaharu; Tsukagoshi, Kazuhito; Ago, Hiroki

    2014-06-01

    During the chemical vapor deposition (CVD) growth of graphene, graphene domains grown on a Cu surface merge together and form a uniform graphene sheet. For high-performance electronics and other applications, it is important to understand the interfacial structure of the merged domains, as well as their influence on the physical properties of graphene. We synthesized large hexagonal graphene domains with controlled orientations on a heteroepitaxial Cu film and studied the structure and properties of the interfaces between the domains mainly merged with the same angle. Although the merged domains have various interfaces with/without wrinkles and/or increased defect-related Raman D-band intensity, the intra-domain transport showed higher carrier mobility reaching 20 000 cm2 V-1 s-1 on SiO2 at 280 K (the mean value was 7200 cm2 V-1 s-1) than that measured for inter-domain areas, 6400 cm2 V-1 s-1 (mean value 2000 cm2 V-1 s-1). The temperature dependence of the mobility suggests that impurity scattering dominates at the interface even for the merged domains with the same orientation. This study highlights the importance of domain interfaces, especially on the carrier transport properties, in CVD-grown graphene.During the chemical vapor deposition (CVD) growth of graphene, graphene domains grown on a Cu surface merge together and form a uniform graphene sheet. For high-performance electronics and other applications, it is important to understand the interfacial structure of the merged domains, as well as their influence on the physical properties of graphene. We synthesized large hexagonal graphene domains with controlled orientations on a heteroepitaxial Cu film and studied the structure and properties of the interfaces between the domains mainly merged with the same angle. Although the merged domains have various interfaces with/without wrinkles and/or increased defect-related Raman D-band intensity, the intra-domain transport showed higher carrier mobility reaching 20

  20. Solidification structures grown under induced flow and continuous casting of steel

    NASA Technical Reports Server (NTRS)

    Tsavaras, A. A.

    1984-01-01

    The use of induced flow as a means to control solidification structures in strand cast steel is investigated. The quality problems in strand cast steel stemming from columnar growth can be partially controlled, by Electro Magnetic Stirring (EMS). Induced flow changes the normal morphology of dendrites. Solids grown under intense stirring conditions show both negative and positive segregation which is considered unacceptable by some steel producers. The inclusion size and population is strongly affected by induced flow (EMS). Laboratory and industrial data show substantial reduction in inclusion size and content, but the overall effect of flow on inclusions is affected by the particular type of flow patterns utilized in each case. Productivity and quality are raised substantially in steel strand casting by utilizing EMS.

  1. Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

    SciTech Connect

    Tokarczyk, M.; Kowalski, G. Stępniewski, R.; Możdżonek, M.; Strupiński, W.; Ciepielewski, P.; Borysiuk, J.

    2013-12-09

    Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal of the buffer layer, it goes between the graphene planes, resulting in an increase of the interlayer spacing to 3.6 Å–3.8 Å. It is explained by the intercalation of molecular hydrogen between carbon planes, which is followed by H{sub 2} dissociation, resulting in negatively charged hydrogen atoms trapped between the graphene layers, with some addition of covalent bonding to carbon atoms. Negatively charged hydrogen may be responsible for p-doping observed in hydrogenated multilayer graphene.

  2. Structural evolution of platinum thin films grown by atomic layer deposition

    SciTech Connect

    Geyer, Scott M.; Methaapanon, Rungthiwa; Bent, Stacey; Johnson, Richard; Clemens, Bruce; Brennan, Sean; Toney, Mike F.

    2014-08-14

    The structural properties of Pt films grown by atomic layer deposition (ALD) are investigated with synchrotron based x-ray scattering and x-ray diffraction techniques. Using grazing incidence small angle scattering, we measure the lateral growth rate of the Pt islands to be 1.0 Å/cycle. High resolution x-ray diffraction reveals that the in-plane strain of the Pt lattice undergoes a transition from compressive strain to tensile strain when the individual islands coalescence into a continuous film. This transition to tensile strain is attributed to the lateral expansion that occurs when neighboring islands merge to reduce their surface energy. Using 2D grazing incidence x-ray diffraction, we show that the lattice orientation becomes more (111) oriented during deposition, with a sharp transition occurring during coalescence. Pt ALD performed at a lower deposition temperature (250 °C) is shown to result in significantly more randomly oriented grains.

  3. Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling

    NASA Astrophysics Data System (ADS)

    Wang, Shengnan; Suzuki, Satoru; Hibino, Hiroki

    2014-10-01

    Topological defects, such as point defects, dislocations and grain boundaries, have a dramatic influence on the chemical and physical properties of large-scale graphene grown by chemical vapor deposition (CVD) method. Here we demonstrate the Raman visualization of polycrystalline structures in an isotopically modified CVD graphene. By means of the reversible reaction of methane on a copper catalyst, the etching of 12C-lattice and surface deposition of 13C-atoms occur in CVD graphene by sequentially introducing hydrogen and isotopic methane after standard growth of graphene with full monolayer coverage. Spatial Raman spectroscopic mapping on labeled graphene reveals pronounced network-like 13C-rich regions, which are further identified to exist along the grain boundaries of graphene by low-energy electron microscopy. The structural defects inside the graphene grains are also targeted in the isotope labeling process. Our work opens a new way to investigate multiple grain structures in CVD graphene with a simple spectroscopic technique.Topological defects, such as point defects, dislocations and grain boundaries, have a dramatic influence on the chemical and physical properties of large-scale graphene grown by chemical vapor deposition (CVD) method. Here we demonstrate the Raman visualization of polycrystalline structures in an isotopically modified CVD graphene. By means of the reversible reaction of methane on a copper catalyst, the etching of 12C-lattice and surface deposition of 13C-atoms occur in CVD graphene by sequentially introducing hydrogen and isotopic methane after standard growth of graphene with full monolayer coverage. Spatial Raman spectroscopic mapping on labeled graphene reveals pronounced network-like 13C-rich regions, which are further identified to exist along the grain boundaries of graphene by low-energy electron microscopy. The structural defects inside the graphene grains are also targeted in the isotope labeling process. Our work opens a new

  4. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    NASA Astrophysics Data System (ADS)

    Nirwal, Varun Singh; Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao

    2016-05-01

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10-5 A to 7.31×10-7 A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of Rs decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  5. Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

    SciTech Connect

    Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung; Baciak, James E.; Bliss, Mary; Nino, Juan C.

    2016-01-01

    The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient to the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.

  6. Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling.

    PubMed

    Wang, Shengnan; Suzuki, Satoru; Hibino, Hiroki

    2014-11-21

    Topological defects, such as point defects, dislocations and grain boundaries, have a dramatic influence on the chemical and physical properties of large-scale graphene grown by chemical vapor deposition (CVD) method. Here we demonstrate the Raman visualization of polycrystalline structures in an isotopically modified CVD graphene. By means of the reversible reaction of methane on a copper catalyst, the etching of (12)C-lattice and surface deposition of (13)C-atoms occur in CVD graphene by sequentially introducing hydrogen and isotopic methane after standard growth of graphene with full monolayer coverage. Spatial Raman spectroscopic mapping on labeled graphene reveals pronounced network-like (13)C-rich regions, which are further identified to exist along the grain boundaries of graphene by low-energy electron microscopy. The structural defects inside the graphene grains are also targeted in the isotope labeling process. Our work opens a new way to investigate multiple grain structures in CVD graphene with a simple spectroscopic technique. PMID:25303722

  7. Influence of Subsurface Hydrogen on the Structural Properties of Graphene Templates Grown on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Grady, Maxwell; Diaconescu, Bogdan; Valovcin, Darren; Hagelberg, Frank; Pohl, Karsten

    2014-03-01

    Graphene has aroused tremendous interest due to its remarkable electronic and mechanical properties. Graphene's optical properties and conductance make it an ideal candidate for use in nanoelectronic devices and organic photoelectric devices. We will present a STM/LEED/DFT study of the single layer graphene on Ru(0001) system grown via a novel growth mechanism that co-adsorbs atomic hydrogen and carbon vapor to the ruthenium surface while simultaneously segregating carbon from the crystal bulk to the surface. Structural studies show a wide array of moire superlattices sizes ranging from 0.9 to 3.0 nm. DFT calculations help explain the appearance of these graphene reconstructions driven by the H presence at the Ru interface. A LEED I(V) study guided by DFT calculations will accompany the STM investigation to provide insight into the graphene layer thickness. The structural polymorphism displayed by this system is of interest for the study of directed self-assembly. Control over moire superstructure size can aid in future work using graphene as a nanotemplate for self-assembled growth of nanoelectronic and organic photovoltaic devices based on pentacenes and fullerenes. Finally the impact of the structural changes on the electronic properties of the system will be studied. Supported by NSF NSEC-425826 and DMR-1006863.

  8. Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces

    NASA Astrophysics Data System (ADS)

    Garratt, E.; Nikoobakht, B.

    2015-08-01

    Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

  9. Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Banks, Curtis E.; Frazier, Donald O.; Penn, Benjamin; Abdeldayem, Hossin; Hicks, Roslin

    1999-01-01

    Phthalocyanine is a very stable organic material in the atmosphere and has been used in numerous applications, such as optical switching and optical storage devices. Although this material has already been discovered for several decades and has had extensive studies conducted on it, many properties still need to be better understood, for example, the mechanisms of forming different solid phases and of changing film morphology by external forces. Phthalocyanine has two preferred solid phases (alpha and beta phases) for which the crystal structures, surface morphology and optical properties are different. In order to investigate these phenomena and the relationship among them, phthalocyanine films have been synthesized by vapor deposition on quartz substrates with and without an external electrical field. Some substrates were coated with a very thin gold film for the electrical field. These films have been characterized using x-ray diffraction, scanning electron microscopy, Fourier transfer infrared spectroscopy, and Z-scan technique. The films have excellent chemical and thermal stability. However, the surface of these films grown without the electrical field shows flower-like morphology. When films are deposited under an electrical field (approximately 3000 V/cm), an aligned structure is revealed on the surface. A comparison of the structure, morphology, optical properties, and the growth mechanism for these films with and without an electrical field will be discussed.

  10. Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Shao, Lin; Lee, J. K.; Wang, Y. Q.; Nastasi, M.; Thompson, Phillip E.; David Theodore, N.; Alford, T. L.; Mayer, J. W.; Chen, Peng; Lau, S. S.

    2006-06-01

    We have investigated hydrogen diffusion in hydrogenated <100> Si/Si homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the Si/Si structure grown at the highest temperature of 800 °C, H trapping occurs at the epitaxial Si/Si substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed.

  11. Structure and collapse of a surface-grown strong polyelectrolyte brush on sapphire.

    PubMed

    Dunlop, Iain E; Thomas, Robert K; Titmus, Simon; Osborne, Victoria; Edmondson, Steve; Huck, Wilhelm T S; Klein, Jacob

    2012-02-14

    We have used neutron reflectometry to investigate the behavior of a strong polyelectrolyte brush on a sapphire substrate, grown by atom-transfer radical polymerization (ATRP) from a silane-anchored initiator layer. The initiator layer was deposited from vapor, following treatment of the substrate with an Ar/H(2)O plasma to improve surface reactivity. The deposition process was characterized using X-ray reflectometry, indicating the formation of a complete, cross-linked layer. The brush was grown from the monomer [2-(methacryloyloxy)ethyl]trimethylammonium chloride (METAC), which carries a strong positive charge. The neutron reflectivity profile of the swollen brush in pure water (D(2)O) showed that it adopted a two-region structure, consisting of a dense surface region ∼100 Å thick, in combination with a diffuse brush region extending to around 1000 Å from the surface. The existence of the diffuse brush region may be attributed to electrostatic repulsion from the positively charged surface region, while the surface region itself most probably forms due to polyelectrolyte adsorption to the hydrophobic initiator layer. The importance of electrostatic interactions in maintaining the brush region is confirmed by measurements at high (1 M) added 1:1 electrolyte, which show a substantial transfer of polymer from the brush to the surface region, together with a strong reduction in brush height. On addition of 10(-4) M oppositely charged surfactant (sodium dodecyl sulfate), the brush undergoes a dramatic collapse, forming a single dense layer about 200 Å in thickness, which may be attributed to the neutralization of the monomers by adsorbed dodecyl sulfate ions in combination with hydrophobic interactions between these dodecyl chains. Subsequent increases in surfactant concentration result in slow increases in brush height, which may be caused by stiffening of the polyelectrolyte chains due to further dodecyl sulfate adsorption. PMID:22292571

  12. Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

    NASA Astrophysics Data System (ADS)

    Seidlitz, Daniel; Senevirathna, M. K. I.; Abate, Y.; Hoffmann, A.; Dietz, N.

    2015-09-01

    This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.

  13. Thermodynamic and structural properties of tuber starches from transgenic potato plants grown in vitro and in vivo.

    PubMed

    Wasserman, Luybov A; Sergeev, Andrey I; Vasil'ev, Viktor G; Plashchina, Irina G; Aksenova, Nina P; Konstantinova, Tatyana N; Golyanovskaya, Svetlana A; Sergeeva, Lidiya I; Romanov, Georgy A

    2015-07-10

    Potato plants harboring Phytochrome B (PHYB) gene from Arabidopsis thaliana or rol genes from Agrobacterium rhizogenes were used to study the effect of transgene expression on structure and properties of starch in tubers. Thermodynamic characteristics of starch (melting temperature, enthalpy of melting, thickness of crystalline lamellae) were shown to be variable depending on the transgene expression and plant culturing mode: in vitro or in soil. The expression of rolB or rolC genes in in vitro cultured plants evoked opposite effects on starch melting temperature and crystalline lamellae thickness. AtPHYB or rolB expression in the soil-grown potato led to the formation of more defective or more ordered starch structures, respectively, in comparison with starches of the same lines grown in vitro. On the whole, our study revealed genotype-dependent differences between starches extracted from tubers of in vitro or in vivo grown plants. PMID:25857977

  14. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2015-12-01

    Titanium doped tungsten oxide (Ti:WO3) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O2 atmosphere. Ti:WO3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10-3-5.0 × 10-3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm2) and tungsten (3 W/cm2) were kept constant. Ti:WO3 films deposited at an oxygen pressure of 5 × 10-3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm2/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: -22.01 mC/cm2, Qa: 17.72 mC/cm2), reversibility (80%) and methylene blue decomposition rate (-1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO3 films.

  15. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  16. Ultrafast structural dynamics of LaVO3 thin films grown by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Lapano, Jason; Stoica, Vladimir; Zhang, Lei; Zhang, Hai-Tian; Akamatsu, Hirofumi; Eaton, Craig; Gopalan, Venkatraman; Freeland, John; Wen, Haidan; Engel-Herbert, Roman

    LaVO3, with a partially full d-shell is expected to be metallic, but due to electron-electron interactions a gap emerges and the ground state is a Mott insulator. Such effects are a strong function of the bonding geometry, and particularly the V-O-V bond angle. Controlling these structural effects on the ultrafast time scale can lead to control over the underlying electronic ground state. Here we report the ultrafast structural dynamics of 25 and 50 nm thick LaVO3 thin films grown by the hybrid molecular beam epitaxy technique on SrTiO3 when excited across the bandgap by 800 nm light. Using time-resolved x-ray diffraction on the 100 ps time scale at Sector 7 of the Advanced Photon Source, we directly measured the structural changes with atomic accuracy by monitoring integer Bragg diffraction peaks and find a large out-of-plane strain of 0.18% upon optical excitation; the recovery time is ~1 ns for the 25 nm film and ~2 ns for the 50 nm film, consistent with the thermal transport from the film to the substrate. Further, we will discuss the response of the oxygen octahedral rotation patterns indicated by changes of the half-order diffraction peaks. Understanding such ultrafast structural deformation is important for optimizing optical excitations to create new metastable phases starting from a Mott insulator. This work was supported by the Department of Energy under Grant DE-SC0012375, and DE-AC02-06CH11357.

  17. Structural analysis of fructans from Agave americana grown in South Africa for spirit production.

    PubMed

    Ravenscroft, Neil; Cescutti, Paola; Hearshaw, Meredith A; Ramsout, Ronica; Rizzo, Roberto; Timme, Elizabeth M

    2009-05-27

    Fructans isolated from Agave americana grown in South Africa are currently used for spirit production. Structural studies on water-soluble fructans were performed to facilitate the development of other applications including its use as a prebiotic. Acid hydrolysis followed by HPAEC-PAD analysis confirmed that the fructan was composed of glucose and fructose, and size analysis by HPAEC-PAD and size exclusion chromatography indicated that the saccharides have a DP range from 6 to 50. An average DP of 14 was estimated by (1)H NMR analysis. Linkage analysis and ESI-MS studies suggest that A. americana has a neofructan structure consisting of a central sucrose to which (2 → 1)- and (2 → 6)-linked β-D-Fruf chains are attached. The (2 → 1)-linked units extend from C-1 of Fru and C-6 of glucose, whereas the (2 → 6)-linked β-D-Fruf units are attached to C-6 of the central Fru. This structure accounts for the presence of equimolar amounts of 1,6-linked Glu and 1,2,6-linked Fru found in linkage analysis and the multiplicity of the NMR signals observed. Detailed ESI-MS studies were performed on fructan fractions: native, periodate oxidized/reduced, and permethylated oligomers. These derivatizations introduced mass differences between Glc and Fru following oxidation and between 1,2-, 1,6-, 2,6-, and 1,2,6-linked units after methylation. Thus, ESI-MS showed the presence of a single Glc per fructan chain and that it is predominantly internal, rather than terminal as found in inulin. These structural features were confirmed by the use of 1D and 2D NMR experiments. PMID:19348427

  18. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  19. Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ibáñez, J.; Oliva, R.; De la Mare, M.; Schmidbauer, M.; Hernández, S.; Pellegrino, P.; Scurr, D. J.; Cuscó, R.; Artús, L.; Shafi, M.; Mari, R. H.; Henini, M.; Zhuang, Q.; Godenir, A.; Krier, A.

    2010-11-01

    We perform a structural and optical characterization of InAs1-xNx epilayers grown by molecular beam epitaxy on InAs substrates (x ≲2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0±0.1 eV.

  20. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition

    SciTech Connect

    Zvonkov, B. N.; Vikhrova, O. V. Dorokhin, M. V.; Kalentyeva, I. L.; Morozov, S. V.; Kryzhkov, D. I.; Yunin, P. A.

    2015-01-15

    The possibility of using the laser deposition method to grow crystalline light-emitting structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the first time. The growth temperature of the GaAs{sub 1−x}Sb{sub x} layers is varied within the range 450–550°C; according to X-ray diffraction analyses, the content of antimony reaches x{sub Sb} ≈ 0.37 at a growth temperature of 450°C. Low-temperature (4 K) photoluminescence spectroscopy demonstrates the presence of a peak associated with the GaAsSb/GaAs QW at around 1.3 μm at the minimum laser-light pumping level. The optimal growth temperature T{sub g} = 500°C and arsine flow rate P{sub A} = 2.2 × 10{sup −8} mol/s at which the best emission properties of QWs with x{sub Sb} ∼ 0.17–0.25 are observed at temperatures of 77 and 300 K are determined. It is shown that GaAsSb/GaAs QWs with similar parameters (width and composition) grown by laser deposition at 500°C and metal-organic vapor-phase epitaxy at 580°C have comparable optical quality.

  1. Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

    PubMed

    Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

    2015-11-01

    Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness. PMID:26726615

  2. Structure, morphologies and dye removal efficiency of ZnO nanorods grown on polycrystalline Zn substrate

    NASA Astrophysics Data System (ADS)

    Yin, Tiantian; Chen, Nan; Zhang, Yingying; Cai, Xiaoyan; Wang, Yude

    2014-10-01

    Rod-like ZnO with the different morphologies were grown on polycrystalline Zn substrate by a simple hydrothermal process in a NaOH or NH4OH solution at the hydrothermal temperature range from 80 to 150 °C for different reaction time. Variations preparation in the different alkali solution concentration, hydrothermal temperature, and reaction times were explored to shed light on the morphology of the rod-like nanostructures. The thorough structural characterization including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), electron diffraction, and X-ray photoelectron spectrum (XPS) were employed to examine the morphology and the microstructure of the final products. It was found that alkali solution concentration, hydrothermal temperature and time have important influence on the morphology of the rod-like nanostructures. The dye removal efficiency of ZnO nanorods was explored by the decoloration of azo dye Congo red (CR). In order to obtain the optimum removal conditions of Congo red, the performance of removing CR with various initial concentrations by ZnO nanorods on Zn substrates with different morphologies was tested under various ambient conditions (visible light illumination and darkness). All prepared samples showed an excellent dye removal efficiency for organic pollutants CR from wastewater, making them promising candidates for the wastewater treatment.

  3. Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

    SciTech Connect

    Ibanez, J.; Oliva, R.; De la Mare, M.; Zhuang, Q.; Godenir, A.; Krier, A.; Schmidbauer, M.; Hernandez, S.; Pellegrino, P.; Scurr, D. J.; Cusco, R.; Artus, L.; Shafi, M.; Mari, R. H.; Henini, M.

    2010-11-15

    We perform a structural and optical characterization of InAs{sub 1-x}N{sub x} epilayers grown by molecular beam epitaxy on InAs substrates (x < or approx. 2.2%). High-resolution x-ray diffraction (HRXRD) is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing (BAC) model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C{sub NM}=2.0{+-}0.1 eV.

  4. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    NASA Technical Reports Server (NTRS)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  5. Isolated starches from yams (Dioscorea sp) grown at the Venezuelan Amazons: structure and functional properties.

    PubMed

    Pérez, Elevina; Rolland-Sabaté, Agnès; Dufour, Dominique; Guzmán, Romel; Tapia, María; Raymundez, Marìa; Ricci, Julien; Guilois, Sophie; Pontoire, Bruno; Reynes, Max; Gibert, Olivier

    2013-10-15

    This work aimed to characterize the molecular structure and functional properties of starches isolated from wild Dioscorea yams grown at the Amazons, using conventional and up-to-date methodologies. Among the high purity starches isolated (≥99%), the chain lengths were similar, whereas variations in gelatinization profile were observed. Starches have shown varied-shaped granules with monomodal distribution, and B-type crystallinity. Variations in amylose contents found by three analyses were hypothesized being related to intermediate material. Linear chain lengths were similar, and their amylopectins showed a dense, spherical conformation and similar molecular characteristics. The average molar mass and the radius of gyration of the chromatograms of the yam amylopectin, M¯W and R¯G were ranging between 174×10(6) g mol(-1) and 237×10(6) g mol(-1), and 201 nm and 233 nm, respectively. The white yams starches were more sensible to enzymes than the other two. All starches have shown a wide range of functional and nutritional properties. PMID:23987395

  6. Optimization of the structural quality of sapphire rods grown by the Stepanov method in a reducing atmosphere

    SciTech Connect

    Kryvonosov, Ye. V.; Konevskiy, P. V. Lytvynov, L. A.; Tkachenko, V. F.

    2015-03-15

    Historically, the Stepanov method has been used for growing long shaped sapphire crystals (rods, tubes, and ribbons) for practical design. The recent intense development of this technique was stimulated by sapphire applications in optics and electronics; thus, the optical and structural quality of these crystals is of great importance. The results of studying the structural quality of sapphire rods up to 18 mm in diameter grown under optimized conditions are reported.

  7. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    SciTech Connect

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  8. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  9. Optical, structural and microhardness properties of KDP crystals grown from urea-doped solutions

    SciTech Connect

    Pritula, I. Kosinova, A.; Kolybayeva, M.; Puzikov, V.; Bondarenko, S.; Tkachenko, V.; Tsurikov, V.; Fesenko, O.

    2008-10-02

    Potassium dihydrophosphate single crystals were grown from aqueous solutions onto a point seed using temperature reduction method by doping with different molar values of urea. The characterization of the grown crystals was made by visible and Fourier transform infrared spectroscopy, Vicker's hardness studies, X-ray powder diffraction, non-linear optical and laser damage threshold measurements. By comparing these crystals with the ones grown from the pure solution, it is shown that 0.2-2.0 M of the urea additive enhances the laser damage threshold and the second harmonic efficiency more than by 25 and 20%, respectively. By means of the Bond method using a multipurpose three-crystal X-ray diffractometer it is shown that the presence of urea additive increases the crystal lattice parameter c of the grown crystals, whereas the lattice parameter a is by an order less sensitive to the changing urea concentration in the solution. The Vicker's hardness studies at room temperature carried out on (1 0 0) and (0 0 1) crystallographic planes show an increased hardness of the doped crystals (grown in the presence of urea additive) on the plane (0 0 1) in comparison with that of pure potassium dihydrophosphate crystal.

  10. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-Tao; Xu, Ke; Guo, Li-Ping; Yang, Zhi-Jian; Pan, Yao-Bo; Su, Yue-Yong; Zhang, Han; Shen, Bo; Zhang, Guo-Yi

    2006-05-01

    We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.

  11. Fe films grown on GaAs(110) in a two-step process: Improved structural and magnetic properties

    SciTech Connect

    Winking, L.; Wenderoth, M.; Homoth, J.; Siewers, S.; Ulbrich, R. G.

    2008-05-12

    Fe films of up to 10 ML thickness were grown on cleaved GaAs(110) in a two-step process that associates low-temperature deposition at 130 K with a subsequent annealing to room temperature. Low-energy electron diffraction, scanning tunneling microscopy, and in situ magneto-optical Kerr effect were combined to study these films. The observed magnetic and structural properties are distinctly different from the characteristics of conventionally grown Fe films on GaAs. We found no indication of interface compound formation. The applied two-step growth process is a promising technique to further increase spin-injection and detection efficiencies of Fe/GaAs hybrid structures.

  12. Structural and magnetic properties of epitaxial CrO2 thin films grown on TiO2 (001) substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Xueyu; Zhong, Xing; Visscher, P. B.; LeClair, Patrick R.; Gupta, Arunava

    2013-04-01

    The structural and magnetic properties of epitaxial CrO2 thin films grown on (001)-oriented TiO2 substrates by atmospheric pressure chemical vapor deposition are investigated. Due to the competition between demagnetization and a relatively weak perpendicular magnetocrystalline anisotropy, the deposited CrO2 (001) films exhibit magnetic properties that are significantly different from CrO2 (100) and CrO2 (110) films grown on TiO2 substrates. Based on the thickness dependence of M-H curves, a surface anisotropy is confirmed to exist, likely originating from strain in the film. The out-of-plane hysteresis curves can be well described by a distribution of effective anisotropy that may be due to a varying local demagnetizing field and a distribution of strain across the film. For the in-plane magnetization, the hysteresis curves are consistent with stripe or vortex domain structures of an almost closed flux configuration at remanence.

  13. Optical polarization characteristics of m-plane GaN/AlGaN quantum well structures grown on m-plane SiC substrate

    NASA Astrophysics Data System (ADS)

    Park, Seoung-Hwan; Ahn, Doyeol

    2015-12-01

    Optical polarization characteristics of m-plane GaN/AlGaN QW structures grown on m-plane SiC substrate were theoretically investigated using the multiband effective-mass theory. The QW structure grown on SiC substrate shows much larger in-plane optical polarization than that grown on GaN substrate. This is attributed to the fact that the QW structure grown on SiC substrate has larger y‧-polarized optical emission and smaller x‧-polarized optical emission than the QW structure grown on GaN substrate. Also, the magnitude of the optical polarization is found to depend on the carrier density and decrease gradually with increasing carrier density. This can be explained by the fact that, with increasing k∥, the x‧-polarized matrix element increases while the y‧-polarized matrix element rapidly decreases.

  14. Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

    SciTech Connect

    Falcão, B. P. Leitão, J. P.; Correia, M. R.; Soares, M. R.; Morales, F. M.; Mánuel, J. M.; Garcia, R.; Gustafsson, A.; Moreira, M. V. B.; Oliveira, A. G. de; González, J. C.

    2013-11-14

    We report an investigation on the morphological, structural, and optical properties of large size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs(111)B and Si(111) substrates. A higher density of vertical nanowires was observed when grown upon GaAs(111)B. Very thin zinc-blende segments are observed along the axis of the nanowires with a slightly higher linear density being found on the nanowires grown on Si(111). Low temperature cathodoluminescence and photoluminescence measurements reveal an emission in the range 1.40–1.52 eV related with the spatial localization of the charge carriers at the interfaces of the two crystalline phases. Mg related emission is evidenced by cathodoluminescence performed on the GaAs epilayer. However, no direct evidence for a Mg related emission is found for the nanowires. The excitation power dependency on both peak energy and intensity of the photoluminescence gives a clear evidence for the type II nature of the radiative transitions. From the temperature dependence on the photoluminescence intensity, non-radiative de-excitation channels with different activation energies were found. The fact that the estimated energies for the escape of the electron are higher in the nanowires grown on Si(111) suggests the presence of wider zinc-blende segments.

  15. Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

    NASA Astrophysics Data System (ADS)

    Okasaka, Shouta; Kubo, Osamu; Tamba, Daiki; Ohashi, Tomohiro; Tabata, Hiroshi; Katayama, Mitsuhiro

    2015-05-01

    Geometry and surface structure of a BaSi2(100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi2(100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi2(100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi2(100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi2(100) film grown on Si(111) is terminated by Si tetrahedra.

  16. X-Ray Characterization of Structural Defects in Seeded and Self-Seeded ZnSe Crystal Grown by PVT in Horizontal and Vertical Configurations

    NASA Technical Reports Server (NTRS)

    Raghothamachar, B.; Dudley, M.; Su, C.-H.; Volz, H. M.; Matyi, R.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    As part of a pre-flight ground based investigation of crystal growth of II-VI compound semiconductors, a number of ZnSe boules have been grown by physical vapor transport (PVT) at Marshall Space Flight Center. Boules were grown in both horizontal and vertical configurations and seeded and self-seeded growth techniques were employed. As-grown and/or cleaved boules were examined by a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction (HRTXD) to characterized the structural defects and correlate them with the growth conditions. Horizontal grown boules tend to grow away from the ampoule wall (contactless growth) and generally exhibit large (110) facets parallel to the gravity vector. Vertical grown boules grew to the full diameter of the ampoule and exhibited no faceting. X-ray topography combined with back reflection x-ray diffraction revealed the presence of lamellar twins (180 deg type about the [111] axis) in horizontal grown boules while vertically grown boules contain a few large grains, some of which are twinned. X-ray topographs and reciprocal space maps recorded from the boules show the better crystal quality of horizontal grown boules. The relationship between crystal quality and gravity vector is investigated. Further, an attempt is made to extend the Hurle theory of twin nucleation in Czochralski grown crystals to explain the twinning mechanisms in horizontal grown boules.

  17. Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Romanov, I. S.; Prudaev, I. A.; Brudnyi, V. N.; Kop'ev, V. V.; Novikov, Vad. A.; Marmalyuk, A. A.; Kureshov, V. A.; Sabitov, D. R.; Mazalov, A. V.

    2015-03-01

    The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are presented. In these structures, an increase of the internal quantum efficiency is observed. The high-resolution X-ray diffraction spectra and the integrated PL intensity are measured for two temperatures - 10 and 300 K - at different levels of optical YAG-laser pumping.

  18. Structural transitions in different monolayers of cobalt phthalocyanine film grown on Bi(1 1 1)

    NASA Astrophysics Data System (ADS)

    Tao, Min-Long; Tu, Yu-Bing; Sun, Kai; Zhang, Yao; Zhang, Xin; Li, Zhao-Bing; Hao, Shao-Jie; Xiao, Hua-Fang; Ye, Juan; Wang, Jun-Zhong

    2016-01-01

    The structural evolution of cobalt phthalocyanine (CoPc) thin films grown on a Bi(1 1 1) surface from the sub-monolayer to the third layer has been investigated with low-temperature scanning tunneling microscopy (STM). Two crucial transitions have been identified during the film epitaxial growth: one is the structural transition from zigzag chains to linear dimerized chains in the monolayer regime; the other is the molecular orientational transition from a flat-lying to a standing-up configuration in the multilayer regime. These results are helpful in understanding the growth mechanism of transition-metal phthalocyanine films on semi-metallic surfaces.

  19. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  20. Analysis of HgTe/CdTe MOCVD grown superlattice epitaxial structures on GaAs by ion beam techniques

    NASA Astrophysics Data System (ADS)

    Wielunski, L. S.; Kenny, M. J.; Pain, G. N.

    1992-02-01

    Heteroepitaxial MOCVD grown HgTe/CdTe superlattice structures have been examined by Rutherford backscattering spectrometry (RBS) to monitor Hg, Cd and Te concentrations as a function of depth. Individual sublayers thicknesses have been measured at the same time. Crystal quality has been assessed using ion channeling. In addition the nuclear reaction 12C(d,p) 13C was used to detect carbon impurities and proton induced X-ray emision (PIXE) analysis used to detect In and Sb introduced during growth. The results show that the as-grown HgTe/CdTe superlattice has good crystal quality and reasonable lateral uniformity. Mercury concentration is difficult to control during growth and variation between sub-layers is observed. Hg-Cd interdiffusion is observed in heat treated samples. Carbon concentration varies; in a good quality samples ⩽ 20 ppm is present.

  1. Differences and similarities between structural properties of GaN grown by different growth methods

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-08-01

    In this paper defects formed in GaN grown by different methods are reviewed. The crystal growth direction and growth rate play important roles. For bulk crystals grown under high pressure the highest growth rates are for planes perpendicular to the c-axis. Only planar defects formed on c-planes are observed in these crystals. There are no threading dislocations or nanotubes in the c-direction. However, polarity of the growth direction plays a role in the surface roughness and the distribution of planar defects. For growth of homo-epitaxial and hetero-epitaxial layers the growth is forced to take place in the much slower c-direction. As a result defects related to the purity of constituents used for growth are formed such as nanotubes and pinholes. In addition threading dislocations and dislocations that accommodate lattice and thermal expansion mismatch are formed.

  2. Multilayer epitaxial graphene grown on the SiC (000- 1) surface; structure and electronic properties

    SciTech Connect

    Sprinkle, M.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Tinkey, H.; Clark, M.C.; Soukiassian, P.; Martinotti, D.; Hass, J.; Conrad, E.H.

    2010-10-22

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (000{bar 1}) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  3. Structural transformations in low-temperature grown GaAs:Sb

    NASA Astrophysics Data System (ADS)

    Vasyukov, D. A.; Baidakova, M. V.; Chaldyshev, V. V.; Suvorova, A. A.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.

    2001-05-01

    Sb-doped and Sb-free GaAs films were grown by molecular beam epitaxy (MBE) at low temperature (LT) and were annealed in the MBE set-up at various temperatures within the range of 500-900 °C. The concentrations of arsenic antisites in as-grown samples obtained using near-infra-red optical absorption were found to be as high as 6×1019 and 7×1019 cm-3 in Sb-doped and Sb-free samples, respectively. Samples were studied by high-resolution x-ray diffractometry (HRXRD) and transmission electron microscopy (TEM). Despite the high concentration of intrinsic point defects, x-ray rocking curves demonstrated perfect crystalline quality in as-grown samples. After annealing at temperatures of 500-700 °C, the lattice mismatch decreased in both Sb-doped and Sb-free samples, but in Sb-doped samples the reduction was much higher than would be expected for the antisite defect concentration determined from optical measurements. The segregation of isovalent Sb impurity into the As clusters was suggested. Upon annealing at temperatures higher than 700 °C, Sb-doped samples manifested a strong broadening of the diffraction maximum related to the LT GaAs:Sb layer. The TEM and HRXRD studies revealed that high-temperature annealing resulted in formation of dislocation loops attached to the large As clusters.

  4. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    SciTech Connect

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-07-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface.

  5. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

    SciTech Connect

    Park, K. W.; Ravindran, Sooraj; Kang, S. J.; Hwang, H. Y.; Jho, Y. D.; Park, C. Y.; Jo, Y. R.; Kim, B. J.; Lee, Y. T.

    2014-07-28

    We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ∼37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

  6. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  7. Experimental phasing for structure determination using membrane-protein crystals grown by the lipid cubic phase method

    SciTech Connect

    Li, Dianfan; Pye, Valerie E.; Caffrey, Martin

    2015-01-01

    Very little information is available in the literature concerning the experimental heavy-atom phasing of membrane-protein structures where the crystals have been grown using the lipid cubic phase (in meso) method. In this paper, pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine labelling as applied to an integral membrane kinase crystallized in meso are described. An assay to assess cysteine accessibility for mercury labelling of membrane proteins is introduced. Despite the marked increase in the number of membrane-protein structures solved using crystals grown by the lipid cubic phase or in meso method, only ten have been determined by SAD/MAD. This is likely to be a consequence of the technical difficulties associated with handling proteins and crystals in the sticky and viscous hosting mesophase that is usually incubated in glass sandwich plates for the purposes of crystallization. Here, a four-year campaign aimed at phasing the in meso structure of the integral membrane diacylglycerol kinase (DgkA) from Escherichia coli is reported. Heavy-atom labelling of this small hydrophobic enzyme was attempted by pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine incorporation. Strategies and techniques for special handling are reported, as well as the typical results and the lessons learned for each of these approaches. In addition, an assay to assess the accessibility of cysteine residues in membrane proteins for mercury labelling is introduced. The various techniques and strategies described will provide a valuable reference for future experimental phasing of membrane proteins where crystals are grown by the lipid cubic phase method.

  8. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  9. Laser MBE-grown yttrium iron garnet films on GaN: characterization of the crystal structure and magnetic properties

    NASA Astrophysics Data System (ADS)

    Kaveev, A. K.; Bursian, V. E.; Gastev, S. V.; Krichevtsov, B. B.; Suturin, S. M.; Volkov, M. P.; Sokolov, N. S.

    2016-07-01

    Yttrium iron garnet (YIG) films were grown on GaN substrates using the laser molecular beam epitaxy method. X-ray diffraction data showed polycrystalline YIG layers without additional structural modifications. The magnetic properties of the YIG films were studied at room temperature with the aid of a vibration sample magnetometer, the magneto-optical Kerr effect and ferromagnetic resonance methods. ‘Easy-plane’-type magnetic anisotropy was found in the films. The gyromagnetic ratio and 4 πMS value were calculated.

  10. Large anomalous Hall resistance of pair {delta}-doped GaAs structures grown by molecular-beam epitaxy

    SciTech Connect

    Jung, D. W.; Noh, J. P.; Touhidul Islam, A. Z. M.; Otsuka, N.

    2008-02-15

    Beryllium/silicon pair {delta}-doped GaAs structures grown by molecular-beam epitaxy exhibit a Hall resistance which has a nonlinear dependence on the applied magnetic field and which is strongly correlated to the negative magnetoresistance observed under the applied magnetic field parallel to the {delta}-doped layers. Dependence of the occurrence of the nonlinear Hall resistance on the growth condition is investigated. A significantly large increase in both the magnitude and the nonlinearity of the Hall resistance is observed from samples whose GaAs buffer layers are grown under the condition of a low As/Ga flux ratio. Reflection high energy electron diffraction and electron microscope observations show that a faceted surface develops with the growth and postgrowth annealing of a GaAs buffer layer under the condition of a low As flux. From samples which have only Si {delta}-doped layers and exhibit the n-type conduction, such nonlinear Hall resistance is not observed. The nonlinearity of the Hall resistance of Be/Si pair {delta}-doped structures depends on the single parameter B/T, where B and T are the applied magnetic field and the temperature, respectively. Based on these results, it is suggested that the nonlinear Hall resistance of Be/Si pair {delta}-doped structures is the anomalous Hall effect caused by localized spins in {delta}-doped layers.

  11. Optical Properties of ZnO Soccer-Ball Structures Grown by Vapor Phase Transport

    NASA Astrophysics Data System (ADS)

    Nam, Giwoong; Lee, Sang-heon; Kim, Soaram; Kim, Min Su; Kim, Do Yeob; Gug Yim, Kwang; Lee, Dong-Yul; Kim, Jin Soo; Kim, Jong Su; Son, Jeong-Sik; Kim, Sung-O.; Jung, Jae Hak; Leem, Jae-Young

    2012-02-01

    ZnO soccer balls were grown on an Au-catalyzed Si(100) substrate by vapor phase transport (VPT) with a mixture of zinc oxide and graphite powders. Temperature-dependent PL was carried out to investigate the mechanism governing the quenching behavior of the PL spectra. From the PL spectra of the ZnO soccer balls at 10 K, several PL peaks were observed at 3.365, 3.318, 3.249, and 3.183 eV corresponding to excitons bound to neutral donors (DoX), a donor-acceptor pair (DAP), first-order longitudinal optical phonon replica of donor-acceptor pair (DAP-1LO), and DAP-2LO, respectively. The mixed system composed of the free exciton (FX) and DoX and the DAP radiative lifetimes were estimated with a theoretical relation between the lifetime and the spectral width. The exciton radiative lifetimes were observed to increase linearly with temperature.

  12. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    NASA Astrophysics Data System (ADS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-01

    We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm-2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  13. Experimental phasing for structure determination using membrane-protein crystals grown by the lipid cubic phase method

    PubMed Central

    Li, Dianfan; Pye, Valerie E.; Caffrey, Martin

    2015-01-01

    Despite the marked increase in the number of membrane-protein structures solved using crystals grown by the lipid cubic phase or in meso method, only ten have been determined by SAD/MAD. This is likely to be a consequence of the technical difficulties associated with handling proteins and crystals in the sticky and viscous hosting mesophase that is usually incubated in glass sandwich plates for the purposes of crystallization. Here, a four-year campaign aimed at phasing the in meso structure of the integral membrane diacylglycerol kinase (DgkA) from Escherichia coli is reported. Heavy-atom labelling of this small hydrophobic enzyme was attempted by pre-labelling, co-crystallization, soaking, site-specific mercury binding to genetically engineered single-cysteine mutants and selenomethionine incorporation. Strategies and techniques for special handling are reported, as well as the typical results and the lessons learned for each of these approaches. In addition, an assay to assess the accessibility of cysteine residues in membrane proteins for mercury labelling is introduced. The various techniques and strategies described will provide a valuable reference for future experimental phasing of membrane proteins where crystals are grown by the lipid cubic phase method. PMID:25615865

  14. Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions

    NASA Astrophysics Data System (ADS)

    Serebryakov, Yu. A.; Prokhorov, I. A.; Vlasov, V. N.; Korobeynikova, E. N.; Zakharov, B. G.; Shul'pina, I. L.; Marchenko, M. P.; Fryazinov, I. V.

    2007-06-01

    Results of ground-based experiments on crystallization of gallium antimonide on the POLIZON facility carried out within the framework of space experiment preparation aboard FOTON satellite are submitted. Technical and technological opportunities of suppression of disturbing factors for improvement of quality of grown crystals in space are substantiated. Features of formation of concentration and structure inhomogeneities in GaSb:Si crystals grown under non-stationary and stationary convection conditions are investigated. Experimental data about structure and dopant distribution inhomogeneities are discussed taking into account results of numerical researches of GaSb:Si crystallization. Also earlier received results of modeling of GaSb:Te crystallization under close temperature conditions are used. Correlation between computational and experimental data is shown. The data on intensity of flows close to crystallization front are received at which non-stationary or stationary conditions of crystallization are realized. The forecast for space conditions is made. The influence of a rotating magnetic field on convection in melt for application in space experiment projected is investigated.

  15. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  16. Study of optical and structural properties of CZTS thin films grown by co-evaporation and spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Moreno, R.; Ramirez, E. A.; Gordillo Guzmán, G.

    2016-02-01

    Results regarding optical and structural properties of Cu2ZnSnS4 (CZTS) thin films prepared by co-evaporation using a novel procedure are compared with those obtained with CZTS films grown using a solution based route. The lattice strain ε and crystallite size D of CZTS films prepared by co-evaporation and by spray pyrolysis were estimated through X-ray diffraction (XRD) measurements using Williamson-Hall-isotropic strain model. The results of estimated average crystallite size of CZTS films by Scherrer and Williamson-Hall plot methods were compared with AFM (atomic force microscopy) measurements. It was found that the average crystallite size measured by Williamson-Hall plot methods agree quite well with AFM results. Further, information regarding the influence of preparation method on both, crystalline phases and the formation of structural defects was achieved through Raman and Urbach energy measurements.

  17. Effects of thermally-induced changes of Cu grains on domain structure and electrical performance of CVD-grown graphene

    NASA Astrophysics Data System (ADS)

    Wu, Yaping; Hao, Yufeng; Fu, Mingming; Jiang, Wei; Wu, Qingzhi; Thrower, Peter A.; Piner, Richard D.; Ke, Congming; Wu, Zhiming; Kang, Junyong; Ruoff, Rodney S.

    2015-12-01

    During the chemical vapor deposition (CVD) growth of graphene on Cu foils, evaporation of Cu and changes in the dimensions of Cu grains in directions both parallel and perpendicular to the foils are induced by thermal effects. Such changes in the Cu foil could subsequently change the shape and distribution of individual graphene domains grown on the foil surface, and thus influence the domain structure and electrical properties of the resulting graphene films. Here, a slower cooling rate is used after the CVD process, and the graphene films are found to have an improved electrical performance, which is considered to be associated with the Cu surface evaporation and grain structure changes in the Cu substrate.

  18. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    NASA Astrophysics Data System (ADS)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  19. Surface electronic structure of polar NiO thin film grown on Ag(111)

    NASA Astrophysics Data System (ADS)

    Das, Jayanta; Menon, Krishnakumar S. R.

    2015-06-01

    The growth and structure of NiO thin films on top of Ag(111) substrate were studied where the formation of faceted surface was confirmed by Low Energy Electron Diffraction. The electronic structure of polar NiO(111) surface has been probed using photoemission techniques. The core energy levels and the valence band electronic structure were excited by x-ray and ultraviolet photons respectively. The modifications in physical structure and valence band electronic structure of the film under vacuum annealing have also been enlightened.

  20. Surface electronic structure of polar NiO thin film grown on Ag(111)

    SciTech Connect

    Das, Jayanta; Menon, Krishnakumar S. R.

    2015-06-24

    The growth and structure of NiO thin films on top of Ag(111) substrate were studied where the formation of faceted surface was confirmed by Low Energy Electron Diffraction. The electronic structure of polar NiO(111) surface has been probed using photoemission techniques. The core energy levels and the valence band electronic structure were excited by x-ray and ultraviolet photons respectively. The modifications in physical structure and valence band electronic structure of the film under vacuum annealing have also been enlightened.

  1. Human norovirus infection of caco-2 cells grown as a three-dimensional tissue structure.

    PubMed

    Straub, Timothy M; Bartholomew, Rachel A; Valdez, Catherine O; Valentine, Nancy B; Dohnalkova, Alice; Ozanich, Richard M; Bruckner-Lea, Cynthia J; Call, Douglas R

    2011-06-01

    Human norovirus (hNoV) infectivity was studied using a three-dimensional model of large intestinal epithelium. Large intestine Caco-2 cells were grown in rotating wall vessel bioreactors for 18-21 days at 37 degrees C and then transferred to 24-well tissue culture plates where they were infected with GI.1 and GII.4 human noroviruses collected from human challenge trials and various outbreak settings, respectively. Compared with uninfected cells, transmission micrographs of norovirus-infected cells displayed evidence of shortening or total loss of apical microvilli, and vacuolization. Quantitative reverse transcription real-time PCR (qRT-PCR) indicated an approximate 2-3 log10 increase in viral RNA copies for the infected cells. A passage experiment examined both the ability for continued viral RNA and viral antigen detection. In the passaged samples 1.01x10(6) copies ml(-1) were detected by qRT-PCR. Immune electron microscopy using primary antibody to hNoV GI.1 capsids in conjunction with 6 nm gold-labelled secondary antibodies was performed on crude cellular lysates. Localization of antibody was observed in infected but not for uninfected cells. Our present findings, coupled with earlier work with the three-dimensional small intestinal INT407 model, demonstrate the utility of 3-D cell culture methods to develop infectivity assays for enteric viruses that do not readily infect mammalian cell cultures. PMID:21942189

  2. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGESBeta

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; et al

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  3. Structural and magnetic characterization of Sm-doped GaN grown by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Dehara, Kentaro; Miyazaki, Yuta; Hasegawa, Shigehiko

    2016-05-01

    We have investigated structural, optical and magnetic properties of Sm-doped GaN thin films grown by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction reveal that Ga1- x Sm x N films with a SmN mole fraction of ˜8% or below are grown on GaN templates without segregation of any secondary phases. With increasing SmN mole fraction, the c-axis lattice parameter of the GaSmN films linearly increases. GaSmN films with low Sm concentrations exhibit inner-4f transitions of Sm3+ in photoluminescence spectra. The present findings show that Sm atoms are substituted for some Ga atoms as trivalent ions (Sm3+). The Ga1- x Sm x N films display hysteresis loops in magnetization versus external magnetic field (M-H) curves even at 300 K. We will discuss the origin of these features together with the corresponding temperature dependences of magnetization.

  4. Effect of lattice strain on structural and optical properties of ZnO nanorods grown by hydrothermal method

    NASA Astrophysics Data System (ADS)

    Gautam, Khyati; Singh, Inderpreet; Nirwal, Varun Singh; Singh, Joginder; Peta, Koteswara Rao; Bhatnagar, P. K.

    2016-05-01

    In this work, we have synthesized ZnO nanorods over ZnO seeds/ITO/glass substrate by the facile hydrothermal method. ZnO seeds are grown at different temperatures ranging from 150°C to 550°C in steps of 100°C. We have studied the effect of strain on the structural and optical properties of ZnOnanorods. It was observed that the growth temperature of seed layer has an influence over the lattice strain present in the nanorods. The as synthesized nanorods were characterized by scanning electron microscope (SEM), x-ray diffraction (XRD) and photoluminescence (PL). SEM images confirm the formation of dense arrays of vertically aligned nanorods on seeds which are grown at 350°C. In addition to this, XRD patterns reveal that these ZnO nanorods are preferentially oriented along (002) direction. The strain analysis based on the XRD results reveals that the minimum value of strain is obtained at 350°C which is attributed to the improved crystalline quality of the interface of seed layer and nanorods leading to their c-axis alignment and enhancement of ultraviolet emission as observed in the PL spectra.

  5. Structure of Stoichiometric and Oxygen-Rich Ultrathin FeO(111) Films Grown on Pd(111)

    SciTech Connect

    Zeuthen, Helene; Kudernatsch, Wilhelmine; Peng, Guowen; Merte, Lindsay R.; Ono, Luis K.; Lammich, Lutz; Bai, Yunhai; Grabow, Lars C.; Mavrikakis, Manos; Wendt, Stefan; Besenbacher, Flemming

    2013-07-25

    Monolayer thin FeO(111) films were grown on Pd(111) and oxidized by atomic oxygen (O). The stoichiometric and oxidized films were studied in detail by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Compared to the previously studied FeO(111)/Pt(111) system, small structural differences were observed for stoichiometric FeO monolayer films. Upon O exposure, the stoichiometric FeO film reconstructs, leading to the formation of new O-rich structures incorporating increasing amounts of additional O atoms. At low O exposures, the STM images exhibit bright features of regularly sized triangular structures assigned to O-adatom dislocation loops. A model of this O-rich structure composed of four-fold O-coordinated Fe atoms is proposed and confirmed by DFT calculations. Furthermore, these O dislocation loops induce the inversion of the FeO film and enclose portions of the film in which the order of the high-symmetry domains is inverted. For higher O exposures, the formation of FeO2–x islands coexisting with O-adatom dislocations and stoichiometric FeO patches was observed. Finally, these FeO2–x islands are reminiscent of the O-rich structures previously reported for FeO supported on Pt(111) and are catalytically active toward CO oxidation.

  6. Synthesis and characterization of ZnO nano and micro structures grown by low temperature spray pyrolysis and vapor transport.

    PubMed

    Agouram, S; Bushiri, M J; Montenegro, D N; Reig, C; Martínez-Tomás, M C; Muñoz-Sanjosé, V

    2012-08-01

    In this work we present a systematic study of ZnO micro and nanostructures grown by spray pyrolysis (SP) and by physical vapour transport (PVT) on glass and c-sapphire substrates at low temperatures. Optimised growth conditions have allowed to obtain homogeneous ZnO nanolayers composed of quasi-spherical nanoparticles in the range 2 to 8 nm by spray pyrolysis, while by PVT the selected growth conditions allow to produce a wide variety of morphologies (tripods, grains, arrows and wires) of nano and microsize dimension. Grazing incidence X-ray diffraction, field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX) were used as characterization techniques in the investigation of structural, morphological and compositional nature of these nanostructures in relation with the growth method. PMID:22962824

  7. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-01

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  8. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    SciTech Connect

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L.

    2015-02-09

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  9. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    SciTech Connect

    Barick, B. K. E-mail: subho-dh@yahoo.co.in; Dhar, S. E-mail: subho-dh@yahoo.co.in; Rodríguez-Fernández, Carlos; Cantarero, Andres

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  10. Structural Properties and Electrochemical Performance of ZnO Nanosheets Grown Directly on Al substrate by Chemical Bath Deposition Techniques

    NASA Astrophysics Data System (ADS)

    Al-Asadi, Ahmed; Ferrera, Roberto; Henley, Luke; Lopez, Nestor; Carozo, Victor; Lin, Zhong; Terrones, Mauricio; Talapatra, Saikat

    We will report on the synthesis & electrochemical characterization of 2-dimentional zinc oxide grown directly on Al substrate by a simple chemical bath deposition method at low temperature (below 1000C). Detail structural characterizations of the synthesized ZnO sheets will be presented and discussed. The electrochemical performances of electrochemical double layer capacitors (EDLC) on electrodes fabricated using these materials were evaluated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy using various electrolytes. We found that high specific capacitance values (greater than 300 F/g) could be achieved using an aqueous electrolyte. The aforementioned results indicates the possibly for using 2-D ZnO architectures fabricated by this simple and cost efficient technique for future electrochemical energy storage devices.

  11. Structural and magnetic properties of MnPd/Fe grown on MgO(100) substrate: Ab initio studies

    NASA Astrophysics Data System (ADS)

    Malonda-Boungou, B. R.; Magnoungou, J. H. J.; M'Passi-Mabiala, B.; Demangeat, C.

    2016-07-01

    Structural and magnetic properties of ultrathin films MnPd/Fe grown on MgO(001) are investigated using a self-consistent pseudopotential plane waves method based on density functional theory in the Perdew-Burke-Ernzerhof generalized gradient approximation. The results obtained reveal the presence of an antiferromagnetic coupling between successive Mn [100] rows, combined with a ripple where Mn outward atoms exhibit a positive magnetic moment, in the case of Mn overlayer on Fe/MgO(001). In the case of MnPd monolayer ordered alloy, the c(2 × 2) structure formation is more favorable than the p(1 × 2) one, exhibiting a ferromagnetic coupling between Mn neighbor atoms with a positive induced ferromagnetic moment on Pd atoms. Pd atoms are pushed outward. For 1-ML MnxPd1 - x on Fe/MgO, the Mn absolute mean magnetization per atom increases as x coverage increases, whereas the Pd mean induced magnetic moment decreases. For systems alternating Mn and Pd monolayers on Fe/MgO(001), a complex magnetic structure is shown on Mn monolayers: changing from Mn neighboring antiferromagnetic coupling to Mn [010] rows antiferromagnetic behavior. The correlation is made between the electronic structure and the magnetic properties, by comparing filled with partially filled components (Pd, Mn and Fe) d-bands. The magnetization easy-axis changes between the in-plane and the out-of-plane orientations from Fe/MgO to MnPd/Fe/MgO systems.

  12. Crystal structure and properties of tetragonal EuAg{sub 4}In{sub 8} grown by metal flux technique

    SciTech Connect

    Subbarao, Udumula; Sarkar, Sumanta; Peter, Sebastian C.

    2015-03-15

    The compound EuAg{sub 4}In{sub 8} has been obtained as single crystals in high yield from reactions run in liquid indium. X-ray diffraction on single crystals suggests that EuAg{sub 4}In{sub 8} crystallizes in the CeMn{sub 4}Al{sub 8} structure type, tetragonal space group I4/mmm with lattice constants a=b=9.7937(2) Å and c=5.7492(2) Å. Crystal structure of EuAg{sub 4}In{sub 8} is composed of pseudo Frank–Kasper cages occupied by one europium atom in each ring, which are shared through the corner along the ab plane resulting in a three dimensional network. The magnetic susceptibility of EuAg{sub 4}In{sub 8} was measured in the temperature range 2–300 K, which obeyed Curie–Weiss law above 50 K. Magnetic moment value calculated from the fitting indicates the presence of divalent europium, which was confirmed by X-ray absorption near edge spectroscopy. Electrical resistivity measurements suggest that EuAg{sub 4}In{sub 8} is metallic in nature with a probable Fermi liquid behavior at low temperature. - Graphical abstract: The tetragonal EuAg{sub 4}In{sub 8} has been grown as single crystals from reactions run in liquid indium. Magnetic and XANES measurements suggest divalent nature of Eu and resistivity measurements suggest metallic nature. - Highlights: • EuAg{sub 4}In{sub 8} phase having tetragonal phase is grown by metal flux technique. • Magnetic and XANES measurements exhibit divalent nature of Eu in EuAg{sub 4}In{sub 8}. • Resistivity measurement suggests metallic nature and probable Fermi liquid behavior.

  13. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    PubMed

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  14. Broadband High-Performance Infrared Antireflection Nanowires Facilely Grown on Ultrafast Laser Structured Cu Surface.

    PubMed

    Fan, Peixun; Bai, Benfeng; Long, Jiangyou; Jiang, Dafa; Jin, Guofan; Zhang, Hongjun; Zhong, Minlin

    2015-09-01

    Infrared antireflection is an essential issue in many fields such as thermal imaging, sensors, thermoelectrics, and stealth. However, a limited antireflection capability, narrow effective band, and complexity as well as high cost in implementation represent the main unconquered problems, especially on metal surfaces. By introducing precursor micro/nano structures via ultrafast laser beforehand, we present a novel approach for facile and uniform growth of high-quality oxide semiconductor nanowires on a Cu surface via thermal oxidation. Through the enhanced optical phonon dissipation of the nanowires, assisted by light trapping in the micro structures, ultralow total reflectance of 0.6% is achieved at the infrared wavelength around 17 μm and keeps steadily below 3% over a broad band of 14-18 μm. The precursor structures and the nanowires can be flexibly tuned by controlling the laser processing procedure to achieve desired antireflection performance. The presented approach possesses the advantages of material simplicity, structure reconfigurability, and cost-effectiveness for mass production. It opens a new path to realize unique functions by integrating semiconductor nanowires onto metal surface structures. PMID:26280305

  15. Minimalist Approach to Complexity: Templating the Assembly of DNA Tile Structures with Sequentially Grown Input Strands.

    PubMed

    Lau, Kai Lin; Sleiman, Hanadi F

    2016-07-26

    Given its highly predictable self-assembly properties, DNA has proven to be an excellent template toward the design of functional materials. Prominent examples include the remarkable complexity provided by DNA origami and single-stranded tile (SST) assemblies, which require hundreds of unique component strands. However, in many cases, the majority of the DNA assembly is purely structural, and only a small "working area" needs to be aperiodic. On the other hand, extended lattices formed by DNA tile motifs require only a few strands; but they suffer from lack of size control and limited periodic patterning. To overcome these limitations, we adopt a templation strategy, where an input strand of DNA dictates the size and patterning of resultant DNA tile structures. To prepare these templating input strands, a sequential growth technique developed in our lab is used, whereby extended DNA strands of defined sequence and length may be generated simply by controlling their order of addition. With these, we demonstrate the periodic patterning of size-controlled double-crossover (DX) and triple-crossover (TX) tile structures, as well as intentionally designed aperiodicity of a DX tile structure. As such, we are able to prepare size-controlled DNA structures featuring aperiodicity only where necessary with exceptional economy and efficiency. PMID:27303951

  16. Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

    NASA Astrophysics Data System (ADS)

    Ye, Zhizhen; Liu, Yaping; Zhou, Zhen-Hong; Reif, Rafael

    1993-02-01

    Low defect-density epitaxial silicon was grown at 550°C, but it became polysilicon or amorphous silicon when the substrate was submitted to bombardment of ECR argon plasma prior to growth. Through carefully characterizing the interface and structure of low temperature epitaxial silicon films using ultrahigh resolution cross-sectional transmission electron microscopy (UHRXTEM), defects were found to have different features in silicon epitaxial layers grown on {100} and {111} silicon substrates. Twinning was more likely to generate in the epitaxial layer grown on the {111} silicon substrate while stacking faults had priority in forming in the epitaxial layer grown on the {100} substrate. The probable causes of different defect formation mechanisms were analyzed and discussed with the help of UHRXTEM lattice images. The atom model of the twin boundary in the epitaxial silicon film was analyzed in detail.

  17. Structural Properties and Resistance-Switching Behavior of Thermally Grown NiO Thin Films

    NASA Astrophysics Data System (ADS)

    Kim, Dong-Wook; Jung, Ranju; Park, Bae Ho; Li, Xiang-Shu; Park, Chanwoo; Shin, Seongmo; Kim, Dong-Chirl; Lee, Chang Won; Seo, Sunae

    2008-03-01

    We investigated the structural and electrical properties of polycrystalline NiO thin films on Pt electrodes formed by thermal oxidation. A Ni-Pt alloy phase was found at the interface, which could be explained by the oxidation kinetics and reactions of Ni, NiO, and Pt. An increase in the oxidation temperature decreased the volume of the alloy layer and improved the crystalline quality of the NiO thin films. Pt/NiO/Pt structures were fabricated, and they showed reversible resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS) and vice versa during unipolar current-voltage measurements. The oxidation temperature affected (did not affect) the HRS (LRS) resistance of the Pt/NiO/Pt structures. This indicated that the transport characteristics of HRS and LRS should be different.

  18. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    NASA Astrophysics Data System (ADS)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-05-01

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  19. Simulating nitrate leaching under winter wheat grown on a structured clay soil considering bypass flow

    NASA Astrophysics Data System (ADS)

    Ragab, R.; Coopers, D. M.; Harris, G. L.; Catt, J. A.

    1996-07-01

    Nitrate leaching from drained plots of structured clay soil under winter wheat is simulated for one growing season using the SOILN model. Results are compared with field measurements from two replicate plots. Soil water movement is simulated both with and without a bypass flow component using the SOIL model. Flow to field drains and soil water content in the root zone are simulated better when bypass flow is included. The results emphasise the importance of considering bypass flow in modelling leaching from structured clay soils. Simulations of nitrate leaching using the SOILN model show that the model captures the main features of the cumulative loss of nitrate over the year.

  20. Structural, electrical, and optical properties of CoxNi1-xO films grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Roffi, Teuku Muhammad; Uchida, Kazuo; Nozaki, Shinji

    2015-03-01

    Thin films of cobalt-nickel oxide (CoxNi1-xO, x=0.01, 0.02, 0.08, 0.17, 0.22, 0.35, 0.56, 0.72) were grown on Al2O3 substrate by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD). The effect of the cobalt composition on the structural, morphological, optical, and electrical properties of the films was investigated. X-ray diffraction (XRD) analysis revealed that all of the films grew with a preferred orientation towards [1 1 1]NiO and a twinned structure. Cobalt was well dispersed in the NiO structure up to x=0.08. CoxNi1-xO alloys were formed from x=0.17 to x=0.22, while phase-separated NiO and CoxNi1-xO formed when x≥0.35. The bandgap of the CoxNi1-xO film was found to decrease with increasing cobalt composition. Four-point probe measurements showed that the resistivity of the film also decreased with increasing cobalt composition, reaching a minimum of 0.006 Ωcm. Hall measurements of the films revealed n-type conductivity. The correlation between the presence of cobalt in different ionization states and the observed decrease in resistivity as well as the type of conductivity in CoxNi1-xO is discussed.

  1. Surface termination structure of α-Ga2O3 film grown by mist chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tamba, Daiki; Kubo, Osamu; Oda, Masaya; Osaka, Shun; Takahashi, Kazuki; Tabata, Hiroshi; Kaneko, Kentaro; Fujita, Shizuo; Katayama, Mitsuhiro

    2016-06-01

    The surface structure of α-Ga2O3(0001) grown on an α-Al2O3(0001) substrate by mist chemical vapor deposition was studied by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). The minimum step height observed in the AFM image was 0.21 ± 0.01 nm, coinciding with the height of three atomic layers of α-Ga2O3(0001). It was revealed by CAICISS analysis that the surface of α-Ga2O3(0001) is terminated by a Ga layer followed by an O layer, which is consistent with the surface termination of α-Al2O3(0001). A structural model taking surface relaxation into account was also constructed by fitting the simulated curve for the azimuth angle dependence of the Ga intensity to the experimental dependence. The resultant structural model is similar to the model of an α-Al2O3(0001) surface, which indicates analogous behavior in corundum crystals.

  2. INSTRUMENTS AND METHODS OF INVESTIGATION: Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bakhtizin, Raouf Z.; Hashizume, T.; Xue, Qi-Kun; Sakurai, Toshio

    1997-11-01

    A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2×4 - α, β, γ and c(4×4) phases are examined in detail. High-resolution STM images indicate that 2×4 - α, β, and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2×4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.

  3. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

    PubMed

    Thelander, C; Dick, K A; Borgström, M T; Fröberg, L E; Caroff, P; Nilsson, H A; Samuelson, L

    2010-05-21

    The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity. PMID:20413840

  4. Structural, optical and magnetic properties of Fe-doped barium stannate thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    James, K. K.; Aravind, Arun; Jayaraj, M. K.

    2013-10-01

    Barium stannate is a wide band gap semiconductor with cubic perovskite structure. Polycrystalline bulk samples of BaSn1-xFexO3d (BFS), with x = 0.00, 0.02, 0.03, 0.05 and 0.10 were prepared by solid-state reaction. In this paper, we report the growth of undoped and Fe doped barium stannate thin films on fused silica substrate using pulsed laser deposition (PLD) technique at a relatively high substrate temperature and low oxygen pressure. The deposited films have wide bandgap and are transparent in the visible region. The X-ray diffraction analysis of the films confirmed the cubic structure. Microstructural studies were carried out using micro-Raman spectroscopy and AFM analysis. Defect induced Raman shifts were observed in the samples. Magnetic studies revealed an increase in magnetic properties for films doped with 10 at% Fe doped samples.

  5. Structure of a heterogeneous, glycosylated, lipid-bound, in vivo-grown protein crystal at atomic resolution from the viviparous cockroach Diploptera punctata.

    PubMed

    Banerjee, Sanchari; Coussens, Nathan P; Gallat, François-Xavier; Sathyanarayanan, Nitish; Srikanth, Jandhyam; Yagi, Koichiro J; Gray, James S S; Tobe, Stephen S; Stay, Barbara; Chavas, Leonard M G; Ramaswamy, Subramanian

    2016-07-01

    Macromolecular crystals for X-ray diffraction studies are typically grown in vitro from pure and homogeneous samples; however, there are examples of protein crystals that have been identified in vivo. Recent developments in micro-crystallography techniques and the advent of X-ray free-electron lasers have allowed the determination of several protein structures from crystals grown in cellulo. Here, an atomic resolution (1.2 Å) crystal structure is reported of heterogeneous milk proteins grown inside a living organism in their functional niche. These in vivo-grown crystals were isolated from the midgut of an embryo within the only known viviparous cockroach, Diploptera punctata. The milk proteins crystallized in space group P1, and a structure was determined by anomalous dispersion from the native S atoms. The data revealed glycosylated proteins that adopt a lipocalin fold, bind lipids and organize to form a tightly packed crystalline lattice. A single crystal is estimated to contain more than three times the energy of an equivalent mass of dairy milk. This unique storage form of nourishment for developing embryos allows access to a constant supply of complete nutrients. Notably, the crystalline cockroach-milk proteins are highly heterogeneous with respect to amino-acid sequence, glycosylation and bound fatty-acid composition. These data present a unique example of protein heterogeneity within a single in vivo-grown crystal of a natural protein in its native environment at atomic resolution. PMID:27437115

  6. Structure of a heterogeneous, glycosylated, lipid-bound, in vivo-grown protein crystal at atomic resolution from the viviparous cockroach Diploptera punctata

    PubMed Central

    Banerjee, Sanchari; Coussens, Nathan P.; Gallat, François-Xavier; Sathyanarayanan, Nitish; Srikanth, Jandhyam; Yagi, Koichiro J.; Gray, James S. S.; Tobe, Stephen S.; Stay, Barbara; Chavas, Leonard M. G.; Ramaswamy, Subramanian

    2016-01-01

    Macromolecular crystals for X-ray diffraction studies are typically grown in vitro from pure and homogeneous samples; however, there are examples of protein crystals that have been identified in vivo. Recent developments in micro-crystallography techniques and the advent of X-ray free-electron lasers have allowed the determination of several protein structures from crystals grown in cellulo. Here, an atomic resolution (1.2 Å) crystal structure is reported of heterogeneous milk proteins grown inside a living organism in their functional niche. These in vivo-grown crystals were isolated from the midgut of an embryo within the only known viviparous cockroach, Diploptera punctata. The milk proteins crystallized in space group P1, and a structure was determined by anomalous dispersion from the native S atoms. The data revealed glycosylated proteins that adopt a lipocalin fold, bind lipids and organize to form a tightly packed crystalline lattice. A single crystal is estimated to contain more than three times the energy of an equivalent mass of dairy milk. This unique storage form of nourishment for developing embryos allows access to a constant supply of complete nutrients. Notably, the crystalline cockroach-milk proteins are highly heterogeneous with respect to amino-acid sequence, glycosylation and bound fatty-acid composition. These data present a unique example of protein heterogeneity within a single in vivo-grown crystal of a natural protein in its native environment at atomic resolution. PMID:27437115

  7. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    NASA Astrophysics Data System (ADS)

    Saravanan, P.; Vinod, V. T. P.; Černík, Miroslav; Vishnuraj, R.; Arout Chelvane, J.; Kamat, S. V.; Hsu, Jen-Hwa

    2015-07-01

    Sub-micron thick Sm-Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm4Co96 and Sm8Co92. The structural and magnetic properties of Sm-Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm-Co films obtained with the Sm4Co96 target exhibit Sm2Co17 as a prominent phase; while the films produced with the Sm8Co92 target show Sm2Co7 as a major phase. Both the Sm-Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm2Co7 films, irrespective of their thicknesses. Coercivity (Hc) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm2Co17 and Sm2Co7-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum Hc value of 8.4 kOe is achieved for the 200 nm thick Sm2Co17-films. As far as e-beam evaporated Sm-Co films are concerned, this Hc value is one of the best values reported so far.

  8. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress.

    PubMed

    Salinas, Carlos; Handford, Michael; Pauly, Markus; Dupree, Paul; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported. PMID:27454873

  9. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress

    PubMed Central

    Salinas, Carlos; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported. PMID:27454873

  10. Polycrystalline domain structure of pentacene thin films epitaxially grown on a hydrogen-terminated Si(111) surface

    SciTech Connect

    Nishikata, S.; Sadowski, J. T.; Al-Mahboob, A.; Nishihara, T.; Fujikawa, Y.; Sakurai, T.; Nakajima, K.; Sazaki, G.; Suto, S.

    2007-10-15

    Single-monolayer high pentacene (Pn) dendrites grown on a hydrogen-terminated Si(111) surface [H-Si(111)] under ultrahigh vacuum were observed by low-energy electron microscopy and microbeam low-energy electron diffraction analyses. We determined the epitaxial structure (type I) inside a unique polycrystalline domain structure of such dendrites, each of which has six equivalent epitaxial orientations of Pn two-dimensional (2D) unit cells. There are three sets of these cells, which are rotated {+-}120 deg. relative to each other. Domain boundaries inside each dendrite were successfully observed by scanning tunneling microscopy. In addition, we found another epitaxial relation (type II): the polycrystalline domain structure and lattice parameters are similar to those of the type-I dendrite; however, the 2D unit cells of the type-II dendrite are rotated approximately 90 deg. relative to those of the type-I dendrite. These results suggest that the crystal structure of the dendrites on H-Si(111) is determined mainly by the interaction between Pn molecules. Each dendrite is composed of domains that are exclusively of type I or II. The so-called point-on-line coincidences are found between the Pn 2D lattices of types I and II, and H-Si(111). The higher commensurability of the type-I dendrites than the type-II dendrites results in a higher probability of type-I dendrite formation. Moreover, for both the type-I and type-II dendrites, we found supercell structures. We estimated the minimum interface energy between the dendrite and H-Si(111) from an island's free energy, which is necessary to reproduce the growth of a single-monolayer high dendrite.

  11. Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-07-31

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  12. Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-12-01

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to the formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  13. Structural change upon annealing of amorphous GeSbTe grown on Si(111)

    NASA Astrophysics Data System (ADS)

    Bragaglia, V.; Jenichen, B.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R.

    2014-08-01

    The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

  14. Properties of Inconel 625 Mesh Structures Grown by Electron Beam Additive Manufacturing

    SciTech Connect

    List III, Frederick Alyious; Dehoff, Ryan R; Lowe, Larry E; Sames, William J

    2014-01-01

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand better these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology.

  15. Structural change upon annealing of amorphous GeSbTe grown on Si(111)

    SciTech Connect

    Bragaglia, V. Jenichen, B.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R.

    2014-08-07

    The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

  16. Structure and Properties of Platinum, Gold and Mercury Nanowires Grown in Superfluid Helium.

    PubMed

    Gordon, Eugene B; Karabulin, Alexander V; Morozov, Andrey A; Matyushenko, Vladimir I; Sizov, Vyacheslav D; Khodos, Igor I

    2014-04-01

    Webs consisting of nanowires made of gold, platinum and mercury were produced by the technique based on laser ablation of metals inside superfluid helium. Their morphology and structure as well as their electrical conductivity have been studied. Diameters of gold and platinum nanowires are 4.5 and 3 nm, respectively. Fortunately, they are close to diameters of nanospheres made of these metals, which, as known from the literature, possess anomalous catalytic activity. Web resistivities for all metals up to room temperature are controlled by conductive electron scattering on a wire surface, thus they are almost independent of T. Nanowires in the webs are electrically interconnected, and therefore the web can be used as a catalyst without any support. Possible advantages of this type of nanocatalyst are outlined. PMID:26274451

  17. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  18. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    NASA Astrophysics Data System (ADS)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  19. Synthesis, optical and structural properties of quantum-wells crystals grown into porous alumina

    NASA Astrophysics Data System (ADS)

    Zaghdoudi, W.; Dammak, T.; ElHouichet, H.; Chtourou, R.

    2014-07-01

    In this work, we present the confinement effect of the incorporation of perovskite compounds (C12H25-NH3)2PbI4 quantum wells into different porous anodic aluminum oxide (PAA) matrix via a chemical route. The detailed structure and optical property of the quantum wells in PAA were characterized by FT-IR, UV-Vis absorption and photoluminescence (PL) spectroscopy. The surface topography for the two used PAA matrix has been studied using atomic force microscopy (AFM). The pores diameters (pores spacing) for the two matrix are 15 (35 nm) and 45 (82 nm). UV-visible and photoluminescence spectroscopy of (C12H25-NH3)2PbI4/PAA exhibits a clear blue shift of the fundamental excitonic transition. This effect is attributed to the confinement of the exciton mode in the pore of the PAA matrix.

  20. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    NASA Astrophysics Data System (ADS)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  1. Structure and magnetic properties of flux grown single crystals of Co3-xFexSn2S2 shandites

    NASA Astrophysics Data System (ADS)

    Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

    2016-01-01

    We report a successful single crystal growth of the shandite-type half-metallic ferromagnet Co3Sn2S2, and its Fe-substituted compounds, Co3-xFexSn2S2, by employing the flux method. Although Fe3Sn2S2 is unstable phase, we found that using the self Sn flux enables us to obtain single phase crystals up to x=0.53. The chemical composition of the grown plate-shaped single crystals was examined using wavelength-dispersive X-ray spectroscopy. The shandite structure with R 3 ̅m symmetry was confirmed by powder X-ray diffraction and the crystal structure parameters were refined using the Rietveld method. Magnetization measurements show suppression of the ferromagnetic order upon Fe-substitution, as well as in other substituted systems such as In- and Ni-substituted Co3Sn2S2. The almost identical magnetic phase diagrams of the Fe- and In-substituted compounds indicate that the electron number is dominantly significant to the magnetism in the Co-based shandite.

  2. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    SciTech Connect

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Sobanska, M.; Klosek, K.; Korona, K. P.

    2015-12-14

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 10{sup 2} and the leakage current of about 10{sup −4} A/cm{sup 2} at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ∼2 nm thick SiN{sub x} layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 10{sup 15 }cm{sup −3}. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiN{sub x} interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  3. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering.

    PubMed

    Saxena, Nupur; Kumar, Pragati; Kabiraj, Debulal; Kanjilal, Dinakar

    2012-01-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters. PMID:23031449

  4. Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering

    NASA Astrophysics Data System (ADS)

    Saxena, Nupur; Kumar, Pragati; Kabiraj, Debulal; Kanjilal, Dinakar

    2012-10-01

    Synthesis and characterization of nano-crystalline silicon grown by atom beam sputtering technique are reported. Rapid thermal annealing of the deposited films is carried out in Ar + 5% H2 atmosphere for 5 min at different temperatures for precipitation of silicon nano-crystals. The samples are characterized for their optical and structural properties using various techniques. Structural studies are carried out by micro-Raman spectroscopy, Fourier transform infrared spectroscopy, transmission electron microscopy (TEM), high resolution transmission electron microscopy, and selected area electron diffraction. The optical properties are studied by photoluminescence and UV-vis absorption spectroscopy, and bandgaps are evaluated. The bandgaps are found to decrease after rapid thermal treatment. The micro-Raman studies show the formation of nano-crystalline silicon in as-deposited as well as annealed films. The shifting and broadening in Raman peak suggest formation of nano-phase in the samples. Results of micro-Raman, photoluminescence, and TEM studies suggest the presence of a bimodal crystallite size distribution for the films annealed at higher temperatures. The results show that atom beam sputtering is a suitable technique to synthesize nearly mono-dispersed silicon nano-crystals. The size of the nano-crystals may be controlled by varying annealing parameters.

  5. Structural, electrical, and optical characterization of coalescent p-n GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Zytkiewicz, Z. R.; Korona, K. P.; Sobanska, M.; Klosek, K.

    2015-12-01

    The electrical, structural, and optical properties of coalescent p-n GaN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrate are investigated. From photoluminescence measurements the full width at half maximum of bound exciton peaks AX and DA is found as 1.3 and 1.2 meV, respectively. These values are lower than those reported previously in the literature. The current-voltage characteristics show the rectification ratio of about 102 and the leakage current of about 10-4 A/cm2 at room temperature. We demonstrate that the thermionic mechanism is not dominant in these samples and spatial inhomogeneties and tunneling processes through a ˜2 nm thick SiNx layer between GaN and Si could be responsible for deviation from the ideal diode behavior. The free carrier concentration in GaN NWs determined by capacitance-voltage measurements is about 4 × 1015 cm-3. Two deep levels (H190 and E250) are found in the structures. We attribute H190 to an extended defect located at the interface between the substrate and the SiNx interlayer or near the sidewalls at the bottom of the NWs, whereas E250 is tentatively assigned to a gallium-vacancy- or nitrogen interstitials-related defect.

  6. Structural analysis of Gossypium hirsutum fibers grown under greenhouse and hydroponic conditions.

    PubMed

    Natalio, Filipe; Tahir, Muhammad Nawaz; Friedrich, Norman; Köck, Margret; Fritz-Popovski, Gerhard; Paris, Oskar; Paschke, Reinhard

    2016-06-01

    Cotton is the one of the world's most important crops. Like any other crop, cotton growth/development and fiber quality is highly dependent on environmental factors. Increasing global weather instability has been negatively impacting its economy. Cotton is a crop that exerts an intensive pressure over natural resources (land and water) and demands an overuse of pesticides. Thus, the search for alternative cotton culture methods that are pesticide-free (biocotton) and enable customized standard fiber quality should be encouraged. Here we describe a culture of Gossypium hirsutum ("Upland" Cotton) utilizing a greenhouse and hydroponics in which the fibers are morphological similar to conventional cultures and structurally fit into the classical two-phase cellulose I model with 4.19nm crystalline domains surrounded by amorphous regions. These fibers exhibit a single crystalline form of cellulose I-Iß, monoclinic unit cell. Fiber quality bulk analysis shows an improved length, strength, whiteness when compared with soil-based cultures. Finally, we show that our fibers can be spun, used for production of non-woven fabrics and indigo-vat stained demonstrating its potential in industrial and commercial applications. PMID:26965558

  7. Structural, compositional, and photoluminescence characterization of thermal chemical vapor deposition-grown Zn₃N₂ microtips

    SciTech Connect

    Wei, Pai-Chun E-mail: tsengcm@phys.sinica.edu.tw; Chang, Chung-Chieh; Hsu, Chia-Hao; Tong, Shih-Chang; Shen, Ji-Lin; Tseng, Chuan-Ming E-mail: tsengcm@phys.sinica.edu.tw

    2014-10-14

    The catalytic growth of Zn₃N₂ using guided-stream thermal chemical vapor deposition has been investigated within the parameter range of acicular growth to obtain uniform microtips with a high crystalline quality. The cubic anti-bixbyite crystal structure of Zn₃N₂ microtips and its related phonon mode are revealed by X-ray diffraction and Raman spectroscopy, respectively. The surface morphologies of pure and surface-oxidized Zn₃N₂ microtips are depicted by scanning electron microscopy and show the crack formation on the surface-oxidized Zn₃N₂ microtips. The spatial element distribution map confirms the VLS growth mechanism for Zn₃N₂ microtips and reveals the depth profile of zinc, nitrogen, oxygen, and nickel elements. Photoluminescence (PL) spectra of Zn₃N₂ microtips show a sharp infrared band-to-band emission peak at 1.34 eV with a full width at half maximum of ~100 meV and a very broad oxygen-related defect band emission peak centered at ~0.85 eV.

  8. Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel.

    PubMed

    Camilli, Luca; Scarselli, Manuela; Gobbo, Silvano Del; Castrucci, Paola; Gautron, Eric; De Crescenzi, Maurizio

    2012-01-01

    We have taken advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs) by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been investigated by a range of electron microscopy and spectroscopy techniques. The results show the good quality and the high graphitization degree of the synthesized MWCNTs. Through energy-loss spectroscopy we found that the electronic properties of these nanostructures are markedly different from those of highly oriented pyrolytic graphite (HOPG). Notably, a broadening of the π-plasmon peak in the case of MWCNTs is evident. In addition, a photocurrent was measured when MWCNTs were airbrushed onto a silicon substrate. External quantum efficiency (EQE) and photocurrent values were reported both in planar and in top-down geometry of the device. Marked differences in the line shapes and intensities were found for the two configurations, suggesting that two different mechanisms of photocurrent generation and charge collection are in operation. From this comparison, we are able to conclude that the silicon substrate plays an important role in the production of electron-hole pairs. PMID:23016140

  9. Structural, optical and ferroelectric behavior of hydrothermally grown ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Chand, Prakash; Gaur, Anurag; Kumar, Ashavani

    2013-12-01

    In the present study, zinc oxide (ZnO) nanostructures have been synthesized at 100 °C for different aging periods, 1, 24, 48 and 96 h by hydrothermal method. Structural, optical and ferroelectric properties were investigated using X-ray diffractometer, field emission scanning electron microscope, Transmission electron microscope, photoluminescence, UV-visible, Raman spectroscopy and P-E loop tracer. The X-ray diffractometer pattern indicates the pure phase formation of ZnO without any impurity for the samples synthesized from 1 to 96 h aging periods, respectively. Field emission scanning electron microscope and transmission electron microscope analysis also shows that the average diameter and length of these nanorods increases with increasing the aging periods. Moreover Raman and Photoluminescence spectrum also confirm the wurtzite phase formation of ZnO. The optical band gaps calculated through UV-visible spectroscopy are found to decrease from 3.81 to 3.45 eV with increase in aging periods, 1-96 h, respectively. Further, improved ferroelectric behavior has been observed for 48 and 96 h aged samples.

  10. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    SciTech Connect

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-15

    We prepared the b-axis-oriented polycrystalline Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} (NTGO) embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix using the reactive diffusion technique. When the sandwich-type Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5} diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10{sup −4} to 7.3×10{sup −3} S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na{sup +} ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems. - Graphical abstract: We have prepared the b-axis-oriented Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} polycrystal embedded in Ga{sub 2}O{sub 3}-doped Na{sub 2}Ti{sub 4}O{sub 9} matrix by the heat treatment of sandwich-type diffusion couple of Ga{sub 2}TiO{sub 5}/NaGaO{sub 2}/Ga{sub 2}TiO{sub 5}. The resulting Na{sub 0.85}Ti{sub 0.51}Ga{sub 4.37}O{sub 8} electrolyte showed the ionic conductivity ranging from 1.3×10{sup −4} S/cm at 573 K to 7.3×10{sup −3} S/cm at 1073 K. - Highlights: • The b

  11. Structure and ionic conductivity of well-aligned polycrystalline sodium titanogallate grown by reactive diffusion

    NASA Astrophysics Data System (ADS)

    Hasegawa, Ryo; Okabe, Momoko; Asaka, Toru; Ishizawa, Nobuo; Fukuda, Koichiro

    2015-09-01

    We prepared the b-axis-oriented polycrystalline Na0.85Ti0.51Ga4.37O8 (NTGO) embedded in Ga2O3-doped Na2Ti4O9 matrix using the reactive diffusion technique. When the sandwich-type Ga2TiO5/NaGaO2/Ga2TiO5 diffusion couple was heated at 1323 K for 24 h, the NTGO polycrystal was readily formed in the presence of a liquid phase. The resulting polycrystalline material was characterized by X-ray diffractometry, electron microscopy and impedance spectroscopy. We mechanically processed the annealed diffusion couple and obtained the thin-plate electrolyte consisting mostly of the grain-aligned NTGO polycrystal. The ionic conductivity (σ) of the electrolyte along the common b-axis direction steadily increased from 1.3×10-4 to 7.3×10-3 S/cm as the temperature increased from 573 to 1073 K. There was a slope change at ca. 792 K for the Arrhenius plot of σ; the activation energies were 0.39 eV above this temperature and 0.57 eV below it. The NTGO showed the crystal structure (space group C2/m) with substantial positional disordering of one of the two Ga sites. The Na+ ions occupied ca. 43% of the Wyckoff position 4i site, the deficiency of which would contribute to the relatively high ionic conductivity along the b-axis. The reactive diffusion could be widely applicable as the novel technique to the preparation of grain-aligned ceramics of multi-component systems.

  12. Variation of strain in single and multilayer (In xGa 1-xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Sobiesierski, Z.; Woolf, D. A.; Westwood, D. I.; Williams, R. H.

    The difference in thermal expansion coefficients between GaAs and Si is known to induce a biaxial tensile strain, below room temperature, for GaAs epilayers grown on Si(100). We have performed photoluminescence (PL) measurements for GaAs layers grown on both Si(111) and misorientated Si(100) substrates by molecular beam epitaxy. These measurements indicate that the thermally-induced strain is greater for the (111) growth direction. Strained In xGa 1-xAs-GaAs multiple quantum well structures grown on Si(100), (MQW/Si), exhibit systematic decreases in low temperature PL transition energies when compared with similar structures grown on GaAs(100), (MQW/GaAs). The MQW structures incorporating greater strain (18.7% In content) show decreases in PL transition energies of 3-9 meV between MQW/Si and MQW/GaAs, while MQW structures containing less-strained layers (11% In content) exhibit 12-13 meV shifts to lower transition energies. It seems, therefore, that the effect of thermal strain becomes more pronounced at lower levels of coherency strain.

  13. Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

    2016-05-01

    In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

  14. Effect of gas flow rate on structural properties of zinc oxide nanowires grown by vapor-solid mechanism

    NASA Astrophysics Data System (ADS)

    Sakrani, S.; Jamaludin, N.; Muhammad, R.; Wahab, Y.; Ismail, A. K.; Suhaimi, S.; Mohammed, Y. H.

    2016-07-01

    ZnO nanowires have been grown on pre-coated (ZnO thin film) silicon (100) substrates with special attention on the effect of gas flow rate. The samples were fabricated using a simple thermal evaporation method within a horizontal quartz tube under controlled supply of Ar and O2 gas where ZnO powder source were previously weighed and heated at 960 °C for 2 h, allowing the reactant vapors to deposit onto substrate to form the nanowires. FESEM images revealed the randomly-oriented nanowires in which the shapes varied with increasing gas flow rates from varied from 90 to 130 sccm. According, both diameter and aspect ratio of the nanowires was observed to shift at 110 sccm where optimum growth condition was expected at this gas flow rate. From EDX spectrum analysis, ZnO nanowires appeared to have uniform composition and purity and confirming the hexagonal wurtzite crystal structure. These measured parameters in combination with unique properties made the possibility of ZnO nanowires potentially useful for functional nanodevices.

  15. Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Jun, S. W.; Lee, R. T.; Fetzer, C. M.; Shurtleff, J. K.; Stringfellow, G. B.; Choi, C. J.; Seong, T.-Y.

    2000-10-01

    The surfactant Bi has been added during organometallic vapor phase epitaxial growth (OMVPE) of GaInP using the precursor trimethylbismuth. The addition of a small amount of Bi during growth results in disordered material using conditions that would otherwise produce highly ordered GaInP. Significant changes in the surface structure are observed to accompany the disordering. Atomic force microscopy measurements show that Bi causes an order of magnitude increase in step velocity, leading to the complete elimination of three-dimensional islands for growth on singular (001) GaAs substrates, and a significant reduction in surface roughness. Surface photoabsorption measurements indicate that Bi reduces the number of [1¯10] P dimers on the surface. Secondary ion mass spectroscopy measurements reveal that the Bi is rejected from the bulk, even though it changes the surface reconstruction. Clearly, Bi acts as a surfactant during OMVPE growth of GaInP. The difference in band gap energy caused by the reduction in order parameter during growth is measured using photoluminescence to be about 110 meV for layers grown on singular substrates. Disorder/order/disorder heterostructures were successfully produced in GaInP with a constant solid composition by modulating the TMBi flow rate during growth.

  16. Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mazet, L.; Bachelet, R.; Louahadj, L.; Albertini, D.; Gautier, B.; Cours, R.; Schamm-Chardon, S.; Saint-Girons, G.; Dubourdieu, C.

    2014-12-01

    Integration of epitaxial complex ferroelectric oxides such as BaTiO3 on semiconductor substrates depends on the ability to finely control their structure and properties, which are strongly correlated. The epitaxial growth of thin BaTiO3 films with high interfacial quality still remains scarcely investigated on semiconductors; a systematic investigation of processing conditions is missing although they determine the cationic composition, the oxygen content, and the microstructure, which, in turn, play a major role on the ferroelectric properties. We report here the study of various relevant deposition parameters in molecular beam epitaxy for the growth of epitaxial tetragonal BaTiO3 thin films on silicon substrates. The films were grown using a 4 nm-thick epitaxial SrTiO3 buffer layer. We show that the tetragonality of the BaTiO3 films, the crystalline domain orientations, and SiO2 interfacial layer regrowth strongly depend on the oxygen partial pressure and temperature during the growth and on the post-deposition anneal. The ferroelectricity of the films, probed using piezoresponse force microscopy, is obtained in controlled temperature and oxygen pressure conditions with a polarization perpendicular to the surface.

  17. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    SciTech Connect

    Dialynas, G. E.; Kalliakos, S.; Xenogianni, C.; Androulidaki, M.; Kehagias, T.; Komninou, P.; Savvidis, P. G.; Pelekanos, N. T.; Hatzopoulos, Z.

    2010-11-15

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 10{sup 8} cm{sup -2} all the way up to a few times 10{sup 10} cm{sup -2}. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  18. Structural and Magnetotransport Study of SrTiO3-δ/Si Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Currie, Alex; Cottier, Ryan; Villarreal, Oscar; Cantu, Jesus; Ponce, Arturo; Theodoropoulou, Nikoleta; Texas State University, San Marcos Collaboration; University of Texas, San Antonio Collaboration

    2014-03-01

    SrTiO3 (STO) films were grown on p-Si (001) substrates using molecular beam epitaxy (MBE). Oxygen vacancies were introduced by controlling the Oxygen resulting in SrTiO3-δ with δ ~ 0.02% for the lowest pressure. The single phase STO/Si films were of high crystalline quality as verified by x-ray diffraction, transmission electron microscopy, and had an rms roughness of less than 0.5nm measured by atomic force microscopy. Transport measurements were performed on the STO/Si structures in a Van der Pauw configuration. We measured resistance as a function of temperature, T = 3K-300K and as a function of an applied magnetic field , H =0 to +/- 9T. The resistivity decreased from 1 Ohm cm to 3x10-2 Ohm cm as the film thickness increased (3nm-60nm) for all temperatures. The magnetoresistance (MR) shows a reproducible trend for all films, the MR is positive at 300K, becomes negative between 200K and 100K and at low temperatures T =3-20K the MR is positive at low H =0 to +/- 2T but at high fields, it starts decreasing again. The MR behavior combined with the Hall effect data indicates the presence of localized electrons that delocalize with H and T. This research was supported by NSF Carrer Award DMR-1255629.

  19. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    NASA Astrophysics Data System (ADS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Maksimova, K. Yu.; Grunin, A. I.; Bursian, V. E.; Lutsev, L. V.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10-84 nm) epitaxial layers of Yttrium Iron Garnet Y3Fe5O12 (YIG) on (111)-oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  20. Structural, morphological, and optoelectrical characterization of Bi2S3 thin films grown by co-evaporation

    NASA Astrophysics Data System (ADS)

    Mesa, F.; Arredondo, C. A.; Vallejo, W.

    2016-03-01

    This work presents the results of synthesis and characterization of polycrystalline n-type Bi2S3 thin films. The films were grown through a chemical reaction from co-evaporation of their precursor elements in a soda-lime glass substrate. The effect of the experimental conditions on the optical, morphological structural properties, the growth rate, and the electrical conductivity (σ) was studied through spectral transmittance, X-ray diffraction (XRD), atomic force microscopy (AFM) and σ versus T measurements, respectively. The results showed that the films grow only in the orthorhombic Bi2S3 bismuthinite phase. It was also found that the Bi2S3 films present an energy band gap (Eg) of about 1.38 eV. In addition to these results, the electrical conductivity of the Bi2S3 films was affected by both the transport of free carriers in extended states of the conduction band and for variable range hopping transport mechanisms, each one predominating in a different temperature range.

  1. Effect of oxygen surfactant on the magnetic and structural properties of Co films grown on Cu(110)

    SciTech Connect

    Ling, W. L.; Qiu, Z. Q.; Takeuchi, O.; Ogletree, D. F.; Salmeron, M.

    2001-01-01

    It was found that atomically flat Co(110) films could be grown on Cu(110) using O as a surfactant. To obtain detailed knowledge on the effect of O on the growth, as well as on the magnetic properties of Co overlayer, we carried out an investigation on this system using Auger electron spectroscopy, low-energy electron diffraction, surface magneto-optic Kerr effect (SMOKE), and scanning tunneling microscopy. With O as a surfactant, the initial growth of Co (<1 ML) results in a flat monolayer structure. When the Co is thicker than 1 ML, three-dimensional clusters begin to form. These clusters become ordered islands at 3 ML Co and coalesce at {approx}5 ML Co. Above 5 ML Co, layer-by-layer growth resumes. No significant Cu segregation is observed. SMOKE studies at room temperature show that the Co film is magnetic above {approx}5 ML Co, with the magnetization easy axis along the [001] direction. On the other hand, without using oxygen as a surfactant, Co grows three-dimensionally on Cu(110). The Co overlayer has its easy magnetization axis along the [001] direction, but the onset of the magnetization was observed at 11 ML Co at room temperature.

  2. Structure of KTiOPO{sub 4} single crystals grown by the top-seeded solution and spontaneous flux crystallization methods

    SciTech Connect

    Novikova, N. E. Verin, I. A.; Sorokina, N. I.; Alekseeva, O. A.; Voronkova, V. I.; Tseitlin, M.; Roth, M.

    2008-11-15

    This paper reports on the results of precision X-ray structural investigations of KTiOPO{sub 4} single crystals grown by one method (crystallization from a solution in the melt) in two variants (the spontaneous formation of crystallization centers or top-seeded solution growth during slow cooling of saturated solution melts). It is shown that spontaneous flux crystallization leads to the formation of a larger number of defects. Potassium atoms are found to be disordered. The splitting of the K1 and K2 potassium positions is equal to 0.347(4) and 0.279(3) A, respectively, for the crystals grown by the top-seeded solution method and 0.308(5) and 0.321(4) A, respectively, for the crystals grown through the spontaneous flux crystallization.

  3. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    NASA Astrophysics Data System (ADS)

    Jiang, Teng; Xu, Shengrui; Zhang, Jincheng; Li, Peixian; Huang, Jun; Ren, Zeyang; Zhu, Jiaduo; Chen, Zhibin; Zhao, Ying; Hao, Yue

    2016-03-01

    The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward < 10 1 ¯ 0 > m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  4. Investigation on the structural properties of GaN films grown on La0.3Sr1.7AlTaO6 substrates

    NASA Astrophysics Data System (ADS)

    Wang, Wenliang; Zhou, Shizhong; Liu, Zuolian; Yang, Weijia; Lin, Yunhao; Qian, Huirong; Gao, Fangliang; Li, Guoqiang

    2014-04-01

    Gallium nitride (GaN) films with excellent structural, electrical and optical properties have been epitaxially grown on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates by radio-frequency molecular beam epitaxy at low temperature. The GaN films grown at 500 °C exhibits high crystalline quality with the (0002) and (10-12) full width at half maximum of 0.056° and 0.071°. There is a maximum of 1.1-nm-thick interfacial layer existing between the as-grown GaN and LSAT (111) substrate, and the as-grown about 300-nm-thick GaN films are almost fully relaxed only with a 0.0094% in-plane tensile strain. Hall and photoluminescence (PL) measurements also reveal outstanding electrical and optical properties of the as-grown GaN films on LSAT. This achievement brings the prospect for achieving highly-efficient GaN-based optoelectronic devices on LSAT (111) substrates.

  5. Study of GaAs/AlGaAs quantum-well structures grown by MOVPE using tertiarybutylarsine

    NASA Astrophysics Data System (ADS)

    Lee, Hyung G.; Kim, HyungJun; Park, S. H.; Langer, Dietrich W.

    1991-03-01

    Tertiarybutylarsine (TBAs) was utilized in the fabrication of GaAs A1GaAs and GaAs/A1GaAs structures in a Low Pressure - Metal Organic Vapor Phase Epitaxy (LP-MOVPE) system. Good quality epitaxial layers were achieved at 700 C with V/LI! ratio of 50. Undoped GaAs and AI (x 3-0. 6) layers were p-type with typical background carrier concentrations of mid 1014 cm3 and 1016 cm3 range respectively. Carbon could be used as p-type dopant in A1GaAS layers by controlling the TBAs mole fraction. Double-heterostructure lasers were fabricated and showed a threshold current density of 500 A/cm2. GaAs/AlGaAs multiple quantum well structures produced photoluminescence spectra with very narrow FWHM comparable to arsine-grown samples. Electro-absorptive waveguide modulator with MQW active layer demonstrated more than 2: 1 modulation ratio at the energy far below the QW exciton absorption peak. The deposition of 111-V compound semiconductors by metalorganic vapor phase epitaxy (MOVPE) is normally accomplished with gaseous group V precursors. These sources arsine (AsH3) and phosphine (PH3) are highly toxic and are stored in high pressure cylinders. Thus careful handlings are required to avoid accidental leakage. Lately a number of less hazardous arsenic compounds have been investigated as alternative As sources Methyl ethyl and butyl groups are substituted for one or more of the hydrogen atoms in arsine. In particular Tertiarybutylarsine (TBAs) has been most successful in growing high quality GaAs and A1GaAS films and useful electronic devices have

  6. Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.; Rouleau, C.M.; Budai, J.D.; Geohegan, D.B.; McCamy, J.W.

    1995-06-01

    Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) and unintentionally doped (p-type) GaSb (001) substrates by pulsed KrF (248 nm) excimer laser ablation of a ZnTe target through an N{sub 2} ambient, without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range have been obtained. This appears to be the first time that any wide band gap (E{sub g} {ge} 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by pulsed-laser ablation (PLA). The maximum carrier concentrations also may be the highest obtained for ZnTe by any method thus far. Because pulsed laser deposition is inherently digital, attractive deposition rates can be combined with precise control of layer thickness in epitaxial multilayered structures. Typical deposition conditions are < 0.5 {angstrom} per laser pulse, with crystalline quality governed by tradeoffs between substrate temperature, pulse repetition rate, and the focused pulsed laser energy density. PLA`s capability for growth of very thin epitaxial layers is being exploited and studied through growth of doped heteroepitaxial quantum well structures in the nearly lattice-matched ZnTe/CdSe//GaSb(substrate) system. Results obtained from growth and characterization of heterostructures in this system will be presented.

  7. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

    PubMed Central

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-01-01

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

  8. Shifts in microbial community structure and function in light- and dark-grown biofilms driven by warming.

    PubMed

    Romaní, Anna M; Borrego, Carles M; Díaz-Villanueva, Verónica; Freixa, Anna; Gich, Frederic; Ylla, Irene

    2014-08-01

    Biofilms are dynamic players in biogeochemical cycling in running waters and are subjected to environmental stressors like those provoked by climate change. We investigated whether a 2°C increase in flowing water would affect prokaryotic community composition and heterotrophic metabolic activities of biofilms grown under light or dark conditions. Neither light nor temperature treatments were relevant for selecting a specific bacterial community at initial phases (7-day-old biofilms), but both variables affected the composition and function of mature biofilms (28-day-old). In dark-grown biofilms, changes in the prokaryotic community composition due to warming were mainly related to rotifer grazing, but no significant changes were observed in functional fingerprints. In light-grown biofilms, warming also affected protozoan densities, but its effect on prokaryotic density and composition was less evident. In contrast, heterotrophic metabolic activities in light-grown biofilms under warming showed a decrease in the functional diversity towards a specialized use of several carbohydrates. Results suggest that prokaryotes are functionally redundant in dark biofilms but functionally plastic in light biofilms. The more complex and self-serving light-grown biofilm determines a more buffered response to temperature than dark-grown biofilms. Despite the moderate increase in temperature of only 2°C, warming conditions drive significant changes in freshwater biofilms, which responded by finely tuning a complex network of interactions among microbial populations within the biofilm matrix. PMID:24552130

  9. InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Teng, Teng; Ai, Likun; Xu, Anhuai; Sun, Hao; Zhu, Fuying; Qi, Ming

    2011-05-01

    A new InP/InGaAs/InP DHBT structure with graded composition base was optimized and grown successfully in this work. The gallium (Ga) composition increased gradually from 47% on the collector side to 55% on the emitter side. The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy (GSMBE). Characteristics of InP, InGaAs and InGaAsP materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100 μm2 was fabricated. The offset voltage of 0.2 V, BVCEO>1.2 V, current gain of ß=550 at VCE of 1.0 V were achieved. The reasons for the low breakdown voltage were analyzed.

  10. Structure of CdTe-Cd1 - xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B.

    1989-09-01

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first transmission electron microscope investigation of this multilayer system grown on InSb. The work clearly demonstrates that multiple quantum wells of high structural quality can be grown reproducibly over a wide range of layer thicknesses. The importance of efficient substrate surface cleaning prior to growth is demonstrated. In order to grow high structural quality multilayers, the choice of buffer layer is also important and a possible explanation for this observation is given.

  11. Fabrication of GaN Microporous Structure at a GaN/Sapphire Interface as the Template for Thick-Film GaN Separation Grown by HVPE

    NASA Astrophysics Data System (ADS)

    Chen, Jianli; Cheng, Hongjuan; Zhang, Song; Lan, Feifei; Qi, Chengjun; Xu, Yongkuan; Wang, Zaien; Li, Jing; Lai, Zhanping

    2016-06-01

    In this paper, a microporous structure at the GaN/sapphire interface has been obtained by an electrochemical etching method via a selective etching progress using an as-grown GaN/sapphire wafer grown by metal organic chemical vapor deposition. The as-prepared GaN interfacial microporous structure has been used as a template for the following growth of thick-film GaN crystal by hydride vapor phase epitaxy (HVPE), facilitating the fabrication of a free-standing GaN substrate detached from a sapphire substrate. The evolution of the interfacial microporous structure has been investigated by varying the etching voltages and time, and the formation mechanism of interfacial microporous structure has been discussed in detail as well. Appropriate interfacial microporous structure is beneficial for separating the thick GaN crystal grown by HVPE from sapphire during the cooling down process. The separation that occurred at the place of interfacial microporous can be attributed to the large thermal strain between GaN and sapphire. This work realized the fabrication of a free-standing GaN substrate with high crystal quality and nearly no residual strain.

  12. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  13. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE PAGESBeta

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  14. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  15. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    SciTech Connect

    Szymański, Tomasz Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  16. Structural Characterization and Antimicrobial Activity of a Biosurfactant Obtained From Bacillus pumilus DSVP18 Grown on Potato Peels

    PubMed Central

    Sharma, Deepak; Ansari, Mohammad Javed; Gupta, Sonam; Al Ghamdi, Ahmad; Pruthi, Parul; Pruthi, Vikas

    2015-01-01

    Background: Biosurfactants constitute a structurally diverse group of surface-active compounds derived from microorganisms. They are widely used industrially in various industrial applications such as pharmaceutical and environmental sectors. Major limiting factor in biosurfactant production is their production cost. Objectives: The aim of this study was to investigate biosurfactant production under laboratory conditions with potato peels as the sole source of carbon source. Materials and Methods: A biosurfactant-producing bacterial strain (Bacillus pumilus DSVP18, NCBI GenBank accession no. GQ865643) was isolated from motor oil contaminated soil samples. Biochemical characteristics of the purified biosurfactant were determined and its chemical structure was analyzed. Stability studies were performed and biological activity of the biosurfactant was also evaluated. Results: The strain, when grown on modified minimal salt media supplemented with 2% potato peels as the sole carbon source, showed the ability to reduce Surface Tension (ST) value of the medium from 72 to 28.7 mN/m. The isolated biosurfactant (3.2 ± 0.32 g/L) was stable over a wide range of temperatures (20 - 120 ºC), pH (2-12) and salt concentrations (2 - 12%). When characterized using high-performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy, it was found to be a lipopeptide in nature, which was further confirmed by Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (mass peak 1044.60) and nuclear magnetic resonance (NMR) studies. Data showed that the isolated biosurfactant at the concentration range of 30 - 35 µg/ml had strong antimicrobial activity when tested against standard strains of Bacillus cereus, Escherichia coli, Salmonella enteritidis, Staphylococcus aureus and Paenibacillus larvae. Conclusions: Potato peels were proved to be potentially useful substrates for biosurfactant production by B. pumilus DSVP18. The strain possessed a

  17. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

    2016-07-01

    A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

  18. Structure and morphology characters of GaN grown by ECR-MBE using hydrogen-nitrogen mixed gas plasma[Electron Cyclotron Resonance-Molecular Beam Epitaxy

    SciTech Connect

    Araki, Tsutomu; Chiba, Yasuo; Nanishi, Yasushi

    2000-07-01

    GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnar structure was formed in the GaN layer grown with hydrogen on Ga-polar template.

  19. Cathodoluminescence study of radiative interface defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures

    SciTech Connect

    Fukushima, Yuta; Chanthaphan, Atthawut; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2015-06-29

    Radiative defects in thermally grown SiO{sub 2}/4H-SiC(0001) structures and their location in depth were investigated by means of cathodoluminescence spectroscopy. It was found that while luminescence peaks ascribed to oxygen vacancy and nonbridging oxygen hole centers were observed both from thermal oxides grown on (0001) Si-face and C-face surfaces as with thermal oxides on Si, intense yellow luminescence at a wavelength of around 600 nm was identified only from the oxide interface on the Si-face substrate regardless of the oxide thickness and dopant type. Possible physical origins of the radiative centers localized near an oxide interface of a few nm thick are discussed on the basis of visible light emission from Si backbone structures.

  20. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lundin, W. V.; Zavarin, E. E.; Popov, M. G.; Troshkov, S. I.; Sakharov, A. V.; Smirnova, I. P.; Kulagina, M. M.; Davydov, V. Yu.; Smirnov, A. N.; Tsatsulnikov, A. F.

    2015-10-01

    Heavily Si-doped Al x Ga1- x N mesastrip structures were grown by selective MOVPE technology. Al x Ga1- x N:Si mesastructures with x ~ 0.01-0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with x ~ 0.03-0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content.

  1. Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

    SciTech Connect

    Park, K. W.; Park, C. Y.; Lee, Y. T.

    2012-07-30

    Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

  2. Lithiated cobaltates for lithium-ion batteries. Structure, morphology and electrochemistry of oxides grown by solid-state reaction, wet chemistry and film deposition

    NASA Astrophysics Data System (ADS)

    Julien, C.; Gastro-Garcia, S.

    We present the structural (XRD and Raman) and electrochemical properties of various oxides of the cobaltate family (with the α-NaFeO 2-type structure) grown by solid-state reaction, wet chemistry and film deposition techniques. It is shown that synthesis greatly affects the electrochemistry and cycle life characteristics of these layer structured cathode materials. HT-LiCoO 2, LT-LiCoO 2, doped LiCo 1- yAl yO 2 and LiCoO 2 films are investigated.

  3. Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Muralidharan, R.; Ramesh, V.; Mishra, Puspashree; Srinivasan, T.

    2014-03-01

    We present surface photo-voltage (SPV) measurements on molecular beam epitaxy (MBE) grown single quantum well (SQW) laser structures. Each layer in the hetero-structure has been identified by measurement of the SPV signal after a controlled sequential chemical etching process. These results have been correlated with high resolution x-ray diffraction and photoluminescence (PL) measurements. Quantum confined Stark effect and the carrier screening of electric field have been taken into consideration both theoretically and experimentally to account for the differences observed in SPV and PL results. It is shown that SPV can be used as a very effective tool for evaluation of hetero-structures involving multiple layers.

  4. Structural properties and metallic conductivity of Ti1-x Nb x O2 films grown by atomic layer deposition on crystalline substrates

    NASA Astrophysics Data System (ADS)

    Luka, Grzegorz; Wachnicki, Lukasz; Jakiela, Rafal; Lusakowska, Elzbieta

    2015-12-01

    Niobium-doped titanium dioxide (Ti1-x Nb x O2, x  ≈  0.04, TNO) films were grown by atomic layer deposition (ALD) at a low growth temperature (220 °C) on LaAlO3(1 0 0) (LAO) and Al2O3(0 0 0 1) (c-sapphire) substrates. The films were without any post-deposition annealing. The films grown on both kinds of substrates have anatase structure. However, the films grown on LAO substrates have (0 0 1) predominant orientation compared to a higher content of (1 1 2) orientation in the films grown on sapphire. TNO/LAO films showed low resistivities (~10-3 Ω cm at room temperature) and a metallic-type electrical conductivity as opposed to higher resistivities (~10-2 Ω cm) and a thermally activated conductivity of TNO/sapphire layers. ALD growth mechanisms of TNO films on crystalline substrates were described.

  5. Structural and optical properties of Cd 0.7Hg 0.3Te-CdTe heterostructures grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lentz, G.; Magnea, N.; Mariette, H.; Tuffigo, H.; Feuillet, G.; Fontenille, J.; Ligeon, E.; Saminadayar, K.

    1990-04-01

    Layers and single quantum wells of Cd xHg 1- xTe with x ⋍ 0.7 have been grown by molecular beam epitaxy. Structural analysis shows that growth free of defects (twins, dislocations) can be achieved on (111)Te Cd 0.96Zn 0.04Te substrates. The Photoluminescence analysis of the layers and the wells reveal that they are efficient light emittors in the 1.3-1.5 μm range.

  6. Effects of N and F passivation on the reliability and interface structure of 700 °C grown ultrathin silicon oxide/Si(100) gate films

    NASA Astrophysics Data System (ADS)

    Yamada, Hiroshi

    2008-01-01

    Correlations between reliability and interfacial structure changes of ultrathin silicon oxide gate films grown at 700 °C with in situ pyrolytic-gas passivation (PGP) were investigated. PGP uses a little pyrolytic N2O and NF3 during ultradry oxidation with pure O2 at less than 1 ppb humidity and has a potential for application to future low-temperature device fabrication processes due to the reliability retention of the films. It was found that the reliability for the 700 °C grown PGP films is much like that of the 800-900 °C grown ones, with an interface state density of less than 1-3×1010/eV cm2 maintained. Quantitative analyses of N, F, and O indicated that this is probably due to microscopic, interfacial structure changes, that is, N and F passivation effectively contributes to compensate inconsistent-state bonding sites and to generate a high-density structure with few dangling bonds.

  7. Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

    NASA Astrophysics Data System (ADS)

    Yazdanfar, M.; Ivanov, I. G.; Pedersen, H.; Kordina, O.; Janzén, E.

    2013-06-01

    By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon carbide (SiC), 100 μm thick epitaxial layers with excellent morphology were grown on 4° off-axis SiC substrates at growth rates exceeding 100 μm/h. In order to reduce the formation of step bunching and structural defects, mainly triangular defects, the effect of varying parameters such as growth temperature, C/Si ratio, Cl/Si ratio, Si/H2 ratio, and in situ pre-growth surface etching time are studied. It was found that an in-situ pre growth etch at growth temperature and pressure using 0.6% HCl in hydrogen for 12 min reduced the structural defects by etching preferentially on surface damages of the substrate surface. By then applying a slightly lower growth temperature of 1575 °C, a C/Si ratio of 0.8, and a Cl/Si ratio of 5, 100 μm thick, step-bunch free epitaxial layer with a minimum triangular defect density and excellent morphology could be grown, thus enabling SiC power device structures to be grown on 4° off axis SiC substrates.

  8. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    PubMed

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties. PMID:26916430

  9. Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE

    NASA Astrophysics Data System (ADS)

    Mukundan, Shruti; Chandan, Greeshma; Mohan, Lokesh; Roul, Basanta; Krupanidhi, S. B.

    2016-01-01

    Plasma-assisted molecular beam epitaxy growth of (10-10) m-InN/(10-10) m-GaN was carried out on bare (10-10) m-sapphire substrate. The high resolution X-ray diffraction studies confirmed the orientation of the as-grown films. Nonpolar InN layer was grown at different growth temperatures ranging from 390 °C to 440 °C and the FWHM of rocking curve revealed good quality film at low temperatures. An in-plane relationship was established for the hetrostructures using phi-scan and a perfect alignment was found for the epilayers. Change of morphology of the films grown at different temperatures was observed using an atomic force microscopy technique showing the smoothest film grown at 400 °C. InN optical band gap was found to be vary from 0.79-0.83 eV from absorption spectra. The blue-shift of absorption edge was found to be induced by excess background electron concentration.

  10. Characterization of dislocation structures and deformation mechanisms in as-grown and deformed directionally solidified NiAl–Mo composites

    SciTech Connect

    Kwon, J.; Bowers, M. L.; Brandes, M. C.; McCreary, V.; Robertson, Ian M.; Phani, P. Sudaharshan; Bei, H.; Gao, Y. F.; Pharr, George M.; George, Easo P.; Mills, M. J.

    2015-02-26

    In this paper, directionally solidified (DS) NiAl–Mo eutectic composites were strained to plastic strain values ranging from 0% to 12% to investigate the origin of the previously observed stochastic versus deterministic mechanical behaviors of Mo-alloy micropillars in terms of the development of dislocation structures at different pre-strain levels. The DS composites consist of long, [1 0 0] single-crystal Mo-alloy fibers with approximately square cross-sections embedded in a [1 0 0] single-crystal NiAl matrix. Scanning transmission electron microscopy (STEM) and computational stress state analysis were conducted for the current study. STEM of the as-grown samples (without pre-straining) reveal no dislocations in the investigated Mo-alloy fibers. In the NiAl matrix, on the other hand, a(1 0 0)-type dislocations exist in two orthogonal orientations: along the [1 0 0] Mo fiber axis, and wrapped around the fiber axis. They presumably form to accommodate the different thermal contractions of the two phases during cool down after eutectic solidification. At intermediate pre-strain levels (4–8%), a/2(1 1 1)-type dislocations are present in the Mo-alloy fibers and the pre-existing dislocations in the NiAl matrix seem to be swept toward the interphase boundary. Some of the dislocations in the Mo-alloy fibers appear to be transformed from a(1 0 0)-type dislocations present in the NiAl matrix. Subsequently, the transformed dislocations in the fibers propagate through the NiAl matrix as a(1 1 1) dislocations and aid in initiating additional slip bands in adjacent fibers. Thereafter, co-deformation presumably occurs by (1 1 1) slip in both phases. With a further increase in the pre-strain level (>10%), multiple a/2(1 1 1)-type dislocations are observed in many locations in the Mo-alloy fibers. Interactions between these systems upon subsequent deformation could lead to stable junctions and persistent dislocation sources. Finally, the transition from stochastic to

  11. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  12. Characterization of dislocation structures and deformation mechanisms in as-grown and deformed directionally solidified NiAl–Mo composites

    DOE PAGESBeta

    Kwon, J.; Bowers, M. L.; Brandes, M. C.; McCreary, V.; Robertson, Ian M.; Phani, P. Sudaharshan; Bei, H.; Gao, Y. F.; Pharr, George M.; George, Easo P.; et al

    2015-02-26

    In this paper, directionally solidified (DS) NiAl–Mo eutectic composites were strained to plastic strain values ranging from 0% to 12% to investigate the origin of the previously observed stochastic versus deterministic mechanical behaviors of Mo-alloy micropillars in terms of the development of dislocation structures at different pre-strain levels. The DS composites consist of long, [1 0 0] single-crystal Mo-alloy fibers with approximately square cross-sections embedded in a [1 0 0] single-crystal NiAl matrix. Scanning transmission electron microscopy (STEM) and computational stress state analysis were conducted for the current study. STEM of the as-grown samples (without pre-straining) reveal no dislocations inmore » the investigated Mo-alloy fibers. In the NiAl matrix, on the other hand, a(1 0 0)-type dislocations exist in two orthogonal orientations: along the [1 0 0] Mo fiber axis, and wrapped around the fiber axis. They presumably form to accommodate the different thermal contractions of the two phases during cool down after eutectic solidification. At intermediate pre-strain levels (4–8%), a/2(1 1 1)-type dislocations are present in the Mo-alloy fibers and the pre-existing dislocations in the NiAl matrix seem to be swept toward the interphase boundary. Some of the dislocations in the Mo-alloy fibers appear to be transformed from a(1 0 0)-type dislocations present in the NiAl matrix. Subsequently, the transformed dislocations in the fibers propagate through the NiAl matrix as a(1 1 1) dislocations and aid in initiating additional slip bands in adjacent fibers. Thereafter, co-deformation presumably occurs by (1 1 1) slip in both phases. With a further increase in the pre-strain level (>10%), multiple a/2(1 1 1)-type dislocations are observed in many locations in the Mo-alloy fibers. Interactions between these systems upon subsequent deformation could lead to stable junctions and persistent dislocation sources. Finally, the transition from stochastic to

  13. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  14. Effects of Precursor Concentration on Structural and Optical Properties of ZnO Thin Films Grown on Muscovite Mica Substrates by Sol-Gel Spin-Coating.

    PubMed

    Kim, Younggyu; Leem, Jae-Young

    2016-05-01

    The structural and optical properties of the ZnO thin films grown on mica substrates for different precursor concentrations were investigated. The surface morphologies of all the samples indicated that they consisted of granular structures with spherical nano-sized crystallites. The thickness of the ZnO thin films increased significantly and the optical band gap exhibited a blue shift with an increase in the precursor concentration. It is remarkable that the highest I(NBE)/I(DLE) ratio was observed for the ZnO thin film with 0.8 M precursor concentration, even though cracks formed on the surface of this film. PMID:27483897

  15. Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Ning, Zhen-Dong; Liu, Shu-Man; Luo, Shuai; Ren, Fei; Wang, Feng-Jiao; Yang, Tao; Liu, Feng-Qi; Wang, Zhan-Guo; Zhao, Lian-Cheng

    2016-04-01

    InAs/InAsSb superlattices were grown on (0 0 1) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. X-ray diffraction, transmission electron microscopy, photoluminescence emission and spectral photoconductivity were used to characterize the grown structures. Generally, photoluminescence emission measurements of InAs/InAsSb superlattices were performed over the temperature range from 11 K to 300 K. The Varshni and Bose-Einstein parameters were determined. Low-temperature photoluminescence measurements showed peaks at 3-5 μm, while photoconductance results showed strong spectral response up to room temperature, when the photoresponse onset was extended to 5.5 μm. The photoluminescence emission band covers the CO2 absorption peak making it suitable for application in CO2 detection.

  16. Structural characterization of Hg 0.78Cd 0.22Te/CdTe LPE heterostructures grown from Te solutions

    NASA Astrophysics Data System (ADS)

    Bernardi, S.; Bocchi, C.; Ferrari, C.; Franzosi, P.; Lazzarini, L.

    1991-08-01

    Hg 0.78Cd 0.22Te epilayers have been grown on CdTe substrates by slider liquid phase epitaxy. The crystal quality of the epitaxial material has been studied in as-grown structures and chemically or mechano-chemically prepared bevels using X-ray topography, double crystal diffractometry and transmission electron microscopy. It has been found that the bulk epilayers exhibit a very high crystal quality, as evidenced by the relatively low density of dislocations and the very narrow Bragg peaks. In contrast, a high dislocation and precipitate density and a broadening of the Bragg peak have been detected in the epilayer near the interface. Finally, a Hg decrease in the layer and a corresponding Hg increase in the substrate close to the interface have been observed.

  17. Structural, Optical and Electrical Properties of n-type GaN on Si (111) Grown by RF-plasma assisted Molecular Beam Epitaxy

    SciTech Connect

    Chin, C. W.; Hassan, Z.; Yam, F. K.

    2008-05-20

    In this paper, we present the study of the structural, optical and electrical of n-type GaN grown on silicon (111) by RF plasma-assisted molecular beam epitaxy (RF-MBE). X-ray diffraction (XRD) measurement reveals that the GaN was epitaxially grown on silicon. For the photoluminescence (PL) measurement, a sharp and intense peak at 364.5 nm indicates that the sample is of high optical quality. Hall effect measurement shows that the film has a carrier concentration of 3.28x10{sup 19} cm{sup -3}. The surface of the n-type GaN was smooth and no any cracks and pits.

  18. The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei

    2009-03-01

    The defect structure of GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) depends on the growth temperature and thickness of the aluminum nitride (AlN) buffer layer. High-resolution X-ray diffraction was used to measure symmetric (0 0 0 2) and asymmetric (1 0 1¯ 2) rocking curve (ω-scans) broadening, which allowed the estimation of screw threading dislocation (TD) and edge TD densities, respectively. For GaN grown on lower-temperature buffer, the density of screw TD was increased while the density of edge TD was decreased. Further examinations revealed that the edge TD was closely related to stress in GaN film and the screw TD was controlled by AlN surface roughness. Since the GaN defect was dominated by edge TD, the total TD was also effectively suppressed with the use of lower-temperature buffer with appropriate thickness.

  19. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS₂ Grown by Vapor Transport.

    PubMed

    McCreary, Amber; Ghosh, Rudresh; Amani, Matin; Wang, Jin; Duerloo, Karel-Alexander N; Sharma, Ankit; Jarvis, Karalee; Reed, Evan J; Dongare, Avinash M; Banerjee, Sanjay K; Terrones, Mauricio; Namburu, Raju R; Dubey, Madan

    2016-03-22

    One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm(-1)) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under ∼1.5% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain. PMID:26881920

  20. Electronic structure of Ga1- x Al x As nanostructures grown on the GaAs surface by ion implantation

    NASA Astrophysics Data System (ADS)

    Donaev, S. B.; Umirzakov, B. E.; Tashmukhamedova, D. A.

    2015-10-01

    The surface morphology and electronic properties of nanocrystalline phases and 2-7-nm-thick Ga1- x Al x As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E g of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size equals 2.8-2.9 eV.

  1. Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

    SciTech Connect

    Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

    2006-12-04

    Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles.

  2. Effects of Strain on CVD-Grown Few-Layered Terrace Structures of MoS2

    NASA Astrophysics Data System (ADS)

    McCreary, Amber; Ghosh, R.; Amani, M.; Wang, J.; Duerloo, K.-A.; Sharma, A.; Jarvis, K.; Reed, E.; Dongare, A.; Banerjee, S. K.; Terrones, M.; Namburu, R.; Dubey, M.

    In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as -5.2 cm-1) and photoluminescence (PL) energy (as high as -88 meV) for the few-layered MoS2 under approximately 1.5% applied uniaxial tensile strain. The observed results were compared to monolayers and few-layers of MoS2 previously reported. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that the properties of CVD-grown few-layered MoS2 studied here can be tuned under strain as well as, if not better than, it's exfoliated monolayered counterpart. Funded by ARL DSI on stacked 2D atomic layered materials, ARO MURI Grant W911NF-11-1-0362, ARO STTR Award W911NF-14-P-0030, and ARL Cooperative Agreement Number W911NF-14-2-0059.

  3. Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

    NASA Astrophysics Data System (ADS)

    Pantzas, K.; Rogers, D. J.; Bove, P.; Sandana, V. E.; Teherani, F. H.; El Gmili, Y.; Molinari, M.; Patriarche, G.; Largeau, L.; Mauguin, O.; Suresh, S.; Voss, P. L.; Razeghi, M.; Ougazzaden, A.

    2016-02-01

    p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

  4. Computational Analysis of the Optical and Charge Transport Properties of Ultrasonic Spray Pyrolysis-Grown Zinc Oxide/Graphene Hybrid Structures.

    PubMed

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2016-12-01

    We demonstrate a systematic computational analysis of the measured optical and charge transport properties of the spray pyrolysis-grown ZnO nanostructures, i.e. nanosphere clusters (NSCs), nanorods (NRs) and nanowires (NWs) for the first time. The calculated absorbance spectra based on the time-dependent density functional theory (TD-DFT) shows very close similarity with the measured behaviours under UV light. The atomic models and energy level diagrams for the grown nanostructures were developed and discussed to explain the structural defects and band gap. The induced stresses in the lattices of ZnO NSCs that formed during the pyrolysis process seem to cause the narrowing of the gap between the energy levels. ZnO NWs and NRs show homogeneous distribution of the LUMO and HOMO orbitals all over the entire heterostructure. Such distribution contributes to the reduction of the band gap down to 2.8 eV, which has been confirmed to be in a good agreement with the experimental results. ZnO NWs and NRs exhibited better emission behaviours under the UV excitation as compared to ZnO NSCs and thin film as their visible range emissions are strongly quenched. Based on the electrochemical impedance measurement, the electrical models and electrostatic potential maps were developed to calculate the electron lifetime and to explain the mobility or diffusion behaviours in the grown nanostructure, respectively. PMID:27173675

  5. Computational Analysis of the Optical and Charge Transport Properties of Ultrasonic Spray Pyrolysis-Grown Zinc Oxide/Graphene Hybrid Structures

    NASA Astrophysics Data System (ADS)

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2016-05-01

    We demonstrate a systematic computational analysis of the measured optical and charge transport properties of the spray pyrolysis-grown ZnO nanostructures, i.e. nanosphere clusters (NSCs), nanorods (NRs) and nanowires (NWs) for the first time. The calculated absorbance spectra based on the time-dependent density functional theory (TD-DFT) shows very close similarity with the measured behaviours under UV light. The atomic models and energy level diagrams for the grown nanostructures were developed and discussed to explain the structural defects and band gap. The induced stresses in the lattices of ZnO NSCs that formed during the pyrolysis process seem to cause the narrowing of the gap between the energy levels. ZnO NWs and NRs show homogeneous distribution of the LUMO and HOMO orbitals all over the entire heterostructure. Such distribution contributes to the reduction of the band gap down to 2.8 eV, which has been confirmed to be in a good agreement with the experimental results. ZnO NWs and NRs exhibited better emission behaviours under the UV excitation as compared to ZnO NSCs and thin film as their visible range emissions are strongly quenched. Based on the electrochemical impedance measurement, the electrical models and electrostatic potential maps were developed to calculate the electron lifetime and to explain the mobility or diffusion behaviours in the grown nanostructure, respectively.

  6. Structural, morphological and electrical studies of lithium ion irradiated sodium potassium niobate single crystal grown by flux method

    SciTech Connect

    Saravanan, R.; Rajesh, D.; Rajasekaran, S. V.; Perumal, R.; Chitra, M.; Jayavel, R.

    2013-02-05

    Single crystals of sodium potassium niobate (K{sub 0.5}Na{sub 0.5})NbO{sub 3} (KNN) were grown by flux method and crystals were irradiated with 45 MeV Li ions to modify the electrical properties. Energy of the irradiated heavy ion was lower than the threshold energy to produce columnar defect and only clusters of defect was observed. The surface morphology of the irradiated single crystals was studied using scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that the surface roughness value was found to increase with increasing fluence.

  7. Structural, morphological and electrical studies of lithium ion irradiated sodium potassium niobate single crystal grown by flux method

    NASA Astrophysics Data System (ADS)

    Saravanan, R.; Rajesh, D.; Rajasekaran, S. V.; Perumal, R.; Chitra, M.; Jayavel, R.

    2013-02-01

    Single crystals of sodium potassium niobate (K0.5Na0.5)NbO3 (KNN) were grown by flux method and crystals were irradiated with 45 MeV Li ions to modify the electrical properties. Energy of the irradiated heavy ion was lower than the threshold energy to produce columnar defect and only clusters of defect was observed. The surface morphology of the irradiated single crystals was studied using scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that the surface roughness value was found to increase with increasing fluence.

  8. FAST TRACK COMMUNICATION: Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron; Mi, Zhou; Xiao, Jie; Dowben, P. A.; Wang, Lu; Mei, Wai-Ning; Kelber, Jeffry A.

    2010-08-01

    A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ1 +) band dispersion yields an effective mass of 0.05 me for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.

  9. Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

    NASA Astrophysics Data System (ADS)

    Sadowski, J.; Mathieu, R.; Svedlindh, P.; Domagała, J. Z.; Bak-Misiuk, J.; Światek, K.; Karlsteen, M.; Kanski, J.; Ilver, L.; Åsklund, H.; Södervall, U.

    2001-05-01

    Ferromagnetic GaMnAs containing up to 10% Mn has been grown by migration-enhanced epitaxy at a substrate temperature of 150 °C. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.90 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition-dependent density of point defects. Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.3% is broken.

  10. Prediction of the structure of a novel amylopectin-based Cd-associated molecule in the stem of common reed grown in the presence of Cd.

    PubMed

    Higuchi, Kyoko; Ito, Naho; Nukada, Tomoo

    2016-10-01

    We previously found a novel Cd-associated molecule with an apparent molecular weight of 10-50 kDa in common reeds grown in the presence of Cd. The partial structure of this molecule was predicted by enzymatic digestion to release Cd from a trace amount that had been partially purified from the cell sap. The major component was branched α-glucan, whereas a peptide, β-1,4 glucan, and mannose were found as minor components. Uronic acids appeared to provide functional groups that bind Cd. PMID:27296512

  11. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    NASA Technical Reports Server (NTRS)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  12. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Tadjer, Marko J.; Mastro, Michael A.; Mahadik, Nadeemullah A.; Currie, Marc; Wheeler, Virginia D.; Freitas, Jaime A.; Greenlee, Jordan D.; Hite, Jennifer K.; Hobart, Karl D.; Eddy, Charles R.; Kub, Fritz J.

    2016-04-01

    Epitaxial growth of monoclinic β-Ga2O3 on a-plane and c-plane sapphire substrates by metalorganic vapor-phase epitaxy (MOVPE) is reported. Crystalline phase, growth rate (˜150 nm/h), and energy gap (˜4.7 eV) were determined by x-ray diffraction and optical reflectance measurements. Film density of ˜5.6 g/cm3 measured by x-ray reflectivity suggests the presence of vacancies, and the O-rich growth regime implies the presence of Ga vacancies in the films. O/Ga ratio of 1.13, as measured by XPS for Ga2O3 grown on c-plane Al2O3, suggests that, near the surface, the film is O-deficient. Atomic force microscopy revealed smoother, smaller grain size when films were grown on c-plane Al2O3. Raman spectroscopy suggested inclusions of α-Ga2O3, likely present at the sapphire interface due to growth on nonnative substrate. Samples of β-Ga2O3 were selectively implanted with Si in the source/drain regions and subsequently annealed at 1000°C for 10 min. Normally-off transistors (V T ≅ 4.7 V) with 20-nm-thick Al2O3 gate oxide were fabricated, and a maximum drain-source current of 4.8 nA was measured.

  13. A TEM investigation of the nucleation, growth and structure of HWE grown lead-tin telluride films

    NASA Astrophysics Data System (ADS)

    Snyman, H. C.; Gouws, G. J.; Muller, R. J.

    1984-12-01

    The epitaxial growth of thin films is usually explained in terms of the interfacial energy of the critical nucleus. In a systematic TEM study of the nucleation and growth of (PbSn)Te on (111) BaF 2 substrates strong evidence is found that the post nucleation stage of recrystallisation and reorientation, rather than nucleation, is dominant in determining the degree of epitaxy. Thin films of various thicknesses were grown, in a hot wall epitaxial (HWE) system, onto (111) BaF 2 substrates at 250°C. Using dark field techniques and microdiffraction the recrystallisation processes and degree of epitaxy were studied as a function of overgrowth thickness. It was found that the degree of epitaxy was critically dependent on the film thickness. Films grown on pre-baked substrates changed from completely polycrystalline at an average thickness of 10 nm to a good epitaxially oriented overgrowth at 150 nm. The driving force for this recrystallisation process is explained in terms of the relative stability of (001) and (111) islands. Electron microscopy and microdiffraction provides direct confirmation of the proposed mechanism and its direction.

  14. Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

    NASA Astrophysics Data System (ADS)

    Fornari, Celso I.; Rappl, Paulo H. O.; Morelhão, Sérgio L.; Abramof, Eduardo

    2016-04-01

    Structural properties of topological insulator bismuth telluride films grown epitaxially on (111) BaF2 with a fixed Bi2Te3 beam flux were systematically investigated as a function of substrate temperature and additional Te flux. A layer-by-layer growth mode is observed since the early stages of epitaxy and remains throughout the whole deposition. Composition of the epitaxial films produced here stays between Bi2Te3 and Bi4Te5, as determined from the comparison of the measured x-ray diffraction curves with calculations. The substrate temperature region, where the growth rate remains constant, is found to be the most appropriate to obtain ordered Bi2Te3 films. Line width of the L = 18 Bi2Te3 diffraction peaks as low as 140 arcsec was obtained, indicating high crystalline quality. Twinning domains density rises with increasing growth temperature and reducing Te extra flux. X-ray reflectivity curves of pure Bi2Te3 films with thickness from 165 to 8 nm exhibited well defined interference fringes, evidencing homogeneous layers with smooth surface. Our results demonstrate that Bi2Te3 films with very well controlled structural parameters can be obtained. High structural quality Bi2Te3 films as thin as only eight quintuple layers grown here are promising candidates for intrinsic topological insulator.

  15. Optical, structural, and transport properties of indium nitride, indium gallium nitride alloys grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khan, Neelam

    InGaN based, blue and green light emitting diodes (LEDs) have been successfully produced over the past decade. But the progress of these LEDs is often limited by the fundamental problems of InGaN such as differences in lattice constants, thermal expansion coefficients and physical properties between InN and GaN. This difficulty could be addressed by studying pure InN and InxGa 1-xN alloys. In this context Ga-rich InxGa1-xN (x ≤ 0.4) epilayers were grown by metal organic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) measurements showed InxGa1-xN films with x= 0.37 had single phase. Phase separation occurred for x ˜ 0.4. To understand the issue of phase separation in Ga-rich InxGa 1-xN, studies on growth of pure InN and In-rich InxGa 1-xN alloys were carried out. InN and In-rich InxGa1-xN (x ˜ 0.97-0.40) epilayers were grown on AlN/Al2O3 templates. A Hall mobility of 1400 cm2/Vs with a carrier concentration of 7x1018cm -3 was observed for InN epilayers grown on AlN templates. Photoluminescence (PL) emission spectra revealed a band to band emission peak at ˜0.75 eV for InN. This peak shifted to 1.15 eV when In content was varied from 1.0 to 0.63 in In-rich InxGa1-xN epilayers. After growth parameter optimization of In-rich InxGa1-xN alloys with (x = 0.97-0.40) were successfully grown without phase separation. Effects of Mg doping on the PL properties of InN epilayers grown on GaN/Al 2O3 templates were investigated. An emission line at ˜ 0.76 eV, which was absent in undoped InN epilayers and was about 60 meV below the band edge emission peak at ˜ 0.82 eV, was observed to be the dominant emission in Mg-doped InN epilayers. PL peak position and the temperature dependent emission intensity corroborated each other and suggested that Mg acceptor level in InN is about 60 meV above the valance band maximum. Strain effects on the emission properties of InGaN/GaN multiple quantum wells (MQWs) were studied using a single blue LED wafer possessing a continuous

  16. Effect of Arbuscular Mycorrhizal Fungi on Plant Biomass and the Rhizosphere Microbial Community Structure of Mesquite Grown in Acidic Lead/Zinc Mine Tailings

    PubMed Central

    Solís-Domínguez, Fernando A.; Valentín-Vargas, Alexis; Chorover, Jon; Maier, Raina M.

    2011-01-01

    Mine tailings in arid and semi-arid environments are barren of vegetation and subject to eolian dispersion and water erosion. Revegetation is a cost-effective strategy to reduce erosion processes and has wide public acceptance. A major cost of revegetation is the addition of amendments, such as compost, to allow plant establishment. In this paper we explore whether arbuscular mycorrhizal fungi (AMF) can help support plant growth in tailings at a reduced compost concentration. A greenhouse experiment was performed to determine the effects of three AMF inocula on biomass, shoot accumulation of heavy metals, and changes in the rhizosphere microbial community structure of the native plant Prosopis juliflora (mesquite). Plants were grown in an acidic lead/zinc mine tailings amended with 10% (w/w) compost amendment, which is slightly sub-optimal for plant growth in these tailings. After two months, AMF-inoculated plants showed increased dry biomass and root length (p < 0.05) and effective AMF colonization compared to controls grown in uninoculated compost-amended tailings. Mesquite shoot tissue lead and zinc concentrations did not exceed domestic animal toxicity limits regardless of whether AMF inoculation was used. The rhizosphere microbial community structure was assessed using denaturing gradient gel electrophoresis (DGGE) profiles of the small subunit RNA gene for bacteria and fungi. Canonical correspondence analysis (CCA) of DGGE profiles showed that the rhizosphere fungal community structure at the end of the experiment was significantly different from the community structure in the tailings, compost, and AMF inocula prior to planting. Further, CCA showed that AMF inoculation significantly influenced the development of both the fungal and bacterial rhizosphere community structures after two months. The changes observed in the rhizosphere microbial community structure may be either a direct effect of the AMF inocula, caused by changes in plant physiology induced by

  17. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability.

    PubMed

    Kang, Yu-Seon; Kang, Hang-Kyu; Kim, Dae-Kyoung; Jeong, Kwang-Sik; Baik, Min; An, Youngseo; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho

    2016-03-23

    We report on changes in the structural, interfacial, and electrical characteristics of sub-1 nm equivalent oxide thickness (EOT) HfO2 grown on InAs by atomic layer deposition. When the HfO2 film was deposited on an InAs substrate at a temperature of 300 °C, the HfO2 was in an amorphous phase with an sharp interface, an EOT of 0.9 nm, and low preexisting interfacial defect states. During post deposition annealing (PDA) at 600 °C, the HfO2 was transformed from an amorphous to a single crystalline orthorhombic phase, which minimizes the interfacial lattice mismatch below 0.8%. Accordingly, the HfO2 dielectric after the PDA had a dielectric constant of ∼24 because of the permittivity of the well-ordered orthorhombic HfO2 structure. Moreover, border traps were reduced by half than the as-grown sample due to a reduction in bulk defects in HfO2 dielectric during the PDA. However, in terms of other electrical properties, the characteristics of the PDA-treated sample were degraded compared to the as-grown sample, with EOT values of 1.0 nm and larger interfacial defect states (Dit) above 1 × 10(14) cm(-2) eV(-1). X-ray photoelectron spectroscopy data indicated that the diffusion of In atoms from the InAs substrate into the HfO2 dielectric during the PDA at 600 °C resulted in the development of substantial midgap states. PMID:26928131

  18. Correlation of Crystalline and Structural Properties of C60 Thin Films Grown at Various Temperature with Charge Carrier Mobility

    SciTech Connect

    Singh,T.; Sarciftci, N.; Yang, H.; Yang, L.; Plochberger, B.; Sitter, H.

    2007-01-01

    Transistors fabricated from C{sub 60} films grown by hot wall epitaxy at higher substrate temperature, showed an order of magnitude increased charge carrier mobility up to 6 cm{sup 2}/V s. In this letter, the authors present an extensive study of morphology and crystallinity of the fullerene films using atomic force microscopy and grazing-incidence x-ray diffraction. A clear correlation of crystalline quality of the C{sub 60} film and charge carrier mobility was found. A higher substrate temperature leads to a single crystal-like faceted fullerene crystals. The high crystalline quality solely brings a drastic improvement in the charge carrier mobility. A gate voltage independent mobility is also observed in these devices which can be attributed to the highly conjugated nature of the C{sub 60} thin film.

  19. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study

    SciTech Connect

    Acharya, Ananta R. E-mail: anantaach@gmail.com; Thoms, Brian D.; Nepal, Neeraj; Eddy, Charles R.

    2015-03-15

    The surface bonding configuration and kinetics of hydrogen desorption from InN grown by plasma-assisted atomic layer epitaxy have been investigated. High resolution electron energy loss spectra exhibited loss peaks assigned to a Fuchs–Kliewer surface phonon, N-N and N-H surface species. The surface N-N vibrations are attributed to surface defects. The observation of N-H but no In-H surface species suggested N-terminated InN. Isothermal desorption data were best fit by the first-order desorption kinetics with an activation energy of (0.88 ± 0.06) eV and pre-exponential factor of (1.5 ± 0.5) × 10{sup 5 }s{sup −1}.

  20. Interfacial mixing and internal structure of Pt-containing nanocomposites grown by room temperature electron beam induced deposition

    SciTech Connect

    Li Juntao; Dunn, Kathleen A.; Thiel, Bradley L.; Toth, Milos

    2010-05-15

    Material grown by room temperature electron beam induced deposition (EBID) using (CH{sub 3}){sub 3}CH{sub 3}C{sub 5}H{sub 4}Pt precursor consists of platinum nanocrystals embedded in an amorphous matrix. The crystallites are shown to intermix with the amorphous oxide on a Si substrate. The extent of intermixing scales with the electron energy density delivered to the material during growth. Dependencies on electron flux, fluence, and exposure time indicate that the intermixing process is athermal, electron-activated, and rate limited by mass transport inside the solid. Furthermore, the degree of deposit crystallinity is shown to scale with the electron flux and fluence used for EBID. We discuss mechanisms behind the observed changes in nanostructure and implications for the growth of functional materials by EBID.

  1. Probing the chemical structure of monolayer covalent-organic frameworks grown via Schiff-base condensation reactions.

    PubMed

    Hu, Ya; Goodeal, Niall; Chen, Ying; Ganose, Alex M; Palgrave, Robert G; Bronstein, Hugo; Blunt, Matthew O

    2016-08-01

    Two-dimensional covalent-organic frameworks (2D-COFs) on surfaces offer a facile route to new 2D materials. Schiff-base condensation reactions have proven to be an effective fabrication route for such materials. We present scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) studies of porphyrin 2D-COFs grown at a solid-vapour interface. XPS shows that covalent links between porphyrins consist of a mixture of imines and hemiaminals, a non-conjugated intermediate in the Schiff-base condensation reaction. These results demonstrate that environmental conditions during growth can have an important impact on the chemical composition of Schiff-base 2D-COFs. PMID:27436064

  2. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  3. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers

    NASA Astrophysics Data System (ADS)

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  4. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  5. The management of stress in MOCVD-grown InGaN/GaN LED multilayer structures on Si(1 1 1) substrates

    NASA Astrophysics Data System (ADS)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

    2013-09-01

    The tensile stress in light-emitting diode (LED)-on-Si(1 1 1) multilayer structures must be reduced so that it does not compromise the multiple quantum well emission wavelength uniformity and structural stability. In this paper it is shown for non-optimized LED structures grown on Si(1 1 1) substrates that both emission wavelength uniformity and structural stability can be achieved within the same growth process. In order to gain a deeper understanding of the stress distribution within such a structure, cross-sectional Raman and photo-luminescence spectroscopy techniques were developed. It is observed that for a Si:GaN layer grown on a low-temperature (LT) AlN intermediate layer there is a decrease in compressive stress with increasing Si:GaN layer thickness during MOCVD growth which leads to a high level of tensile stress in the upper part of the layer. This may lead to the development of cracks during cooling to room temperature. Such a phenomenon may be associated with annihilation of defects such as dislocations. Therefore, a reduction of dislocation intensity should take place at the early stage of GaN growth on an AlN or AlGaN layer in order to reduce a build up of tensile stress with thickness. Furthermore, it is also shown that a prolonged three dimensional GaN island growth on a LT AlN interlayer for the reduction of dislocations may result in a reduction in the compressive stress in the resulting GaN layer.

  6. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses

    NASA Astrophysics Data System (ADS)

    Jabri, S.; Amiri, G.; Sallet, V.; Souissi, A.; Meftah, A.; Galtier, P.; Oueslati, M.

    2016-05-01

    ZnSe layers were grown on ZnO substrates by the metal organic chemical vapor deposition technique. A new structure appeared at lower thicknesses films. The structural properties of the thin films were studied by the X-ray diffraction (XRD) and Raman spectroscopy methods. First, Raman selection rules are explicitly put forward from a theoretical viewpoint. Second, experimentally-retrieved-intensities of the Raman signal as a function of polarization angle of incident light are fitted to the obtained theoretical dependencies in order to confirm the crystallographic planes of zinc blend ZnSe thin film, and correlate with DRX measurements. Raman spectroscopy has been used to characterize the interfacial disorder that affects energy transport phenomena at ZnSe/ZnO interfaces and the Photoluminescence (PL) near the band edge of ZnSe thin films.

  7. Effects of decreased pH on membrane structural organization of Escherichia coli grown in different fatty acid-supplemented media: a 31P NMR study.

    PubMed

    Ianzini, F; Guidoni, L; Simone, G; Viti, V; Yatvin, M B

    1990-04-01

    Total membranes from Escherichia coli cells grown in different fatty acid-supplemented media have been examined by 31P NMR at different pH values. The isolated inner and outer membranes were also studied and compared to the liposomes formed with the corresponding extracted lipids. While the liposomes show structures that are correlated with lipid composition, degree of fatty acid unsaturation, and pH, the membrane structure is mainly bilayer. The presence of two bilayer phases characterized by different chemical shift anisotropy values (delta nu csa) is detectable at neutral pH; a perturbation of the bilayer phase characterized by the smallest delta nu csa is produced by low pH. Moreover, an isotropic peak is always present in the membrane NMR spectra: its attribution to cardiolipin molecules is discussed on the basis of digestion experiments with phospholipase C. PMID:2181934

  8. Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M.; Ramsteiner, Manfred; Riechert, Henning; Korytov, Maxim; Albrecht, Martin

    2012-04-09

    We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

  9. Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

    NASA Astrophysics Data System (ADS)

    David, S.; Roque, J.; Rochat, N.; Bernier, N.; Piot, L.; Alcotte, R.; Cerba, T.; Martin, M.; Moeyaert, J.; Bogumilowizc, Y.; Arnaud, S.; Bertin, F.; Bassani, F.; Baron, T.

    2016-05-01

    Structural and optical properties of InGaAs quantum well fins (QWFs) selectively grown on Si using the aspect ratio trapping (ART) method in 200 nm deep SiO2 trenches are studied. A new method combining cathodoluminescence, transmission electron microscopy, and precession electron diffraction techniques is developed to spatially correlate the presence of defects and/or strain with the light emission properties of a single InGaAs QWF. Luminescence losses and energy shifts observed at the nanoscale along InGaAs QWF are correlated with structural defects. We show that strain distortions measured around threading dislocations delimit both high and low luminescent areas. We also show that trapped dislocations on SiO2 sidewalls can also result in additional distortions. Both behaviors affect optical properties of QWF at the nanoscale. Our study highlights the need to improve the ART growth method to allow integration of new efficient III-V optoelectronic components on Si.

  10. InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Teng, Teng; Xu, Anhuai; Ai, Likun; Sun, Hao; Qi, Ming

    2013-09-01

    A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3×1019 cm-3 with carrier mobility of 66.3 cm2/V s. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100 μm2 was fabricated. The open base breakdown voltage (VBCEO) of 4.2 V and current gain of 60 at VCE of 3.0 V were achieved. All these results prove the material is suitable for DHBT device fabrication.

  11. Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Chan, C. H.; Wu, J. D.; Huang, Y. S.; Su, Y. K.; Tiong, K. K.

    2009-08-01

    Highly strained InxGa1-xAs/GaAs double quantum well (DQW) structures grown by metal organic vapor phase epitaxy with different In compositions are investigated by surface photovoltage spectroscopy (SPS) in the temperature range 20-300 K. A lineshape fit of spectral features in the differential surface photovoltage (SPV) spectra determines the transition energies accurately. A comprehensive analysis of the anomalous phenomena appearing in lower temperature SPV spectra enable us to evaluate directly the band lineup of DQW and to remove the ambiguity in the identification of spectral features. The process of separation of carriers within the QW with possible capture by the interface defect traps plays an important role for phase change in SPV signal in the vicinity of light-hole related feature at low temperature. The results demonstrate the considerable diagnostic values of the SPS technique for characterizing these highly strained DQW structures.

  12. Optical properties of CdTe- Cd0.90Mn0.10Te multiple quantum well structures grown by pulsed laser evaporation and epitaxy

    NASA Astrophysics Data System (ADS)

    Dubowski, J. J.; Roth, A. P.; Deleporte, E.; Peter, G.; Feng, Z. C.; Perkowitz, S.

    1992-02-01

    Low-temperature photoluminescence, photoluminescence excitation and Raman spectroscopy measurements of CdTeCd 0.90Mn 0.10Te multiple quantum well (MQW) structures grown by pulsed laser evaporation and epitaxy (PLEE) on (001) Cd 1- xZn xTe substrates are carried out. The samples are grown from fluxes of Cd-Te and Cd-Mn-Te provided by ablation of solid CdTe and Cd 0.93Mn 0.07Te targets with Nd:YAG and excimer XeCl lasers, respectively. The excitonic lines corresponding to the quantum well E 1-HH 1 transition are investigated. Comparison between the observed PL excitonic emissions and calculated energy levels using a Kronig-Penney model with the well width as a fitting parameter allowed us to determine the "optical" well widths of the samples and to compare them with those determined from secondary ion mass spectroscopy in-depth profiles. Raman spectra for non-resonance excitation at 501.7 nm are dominated by the CdTe-like longitudinal optical (LO) modes at 166 cm -1 and MnTe-like LO modes at 194 cm -1 from the Cd 0.90Mn 0.10Te barriers. Under resonance conditions, with excitation at 476.5 nm the CdTe LO, 2LO and 3LO modes from the wells near 170,340 and 510 cm -1 dominate the spectra. The results clearly indicate that the PLEE-grown MQWs have the characteristics of the best currently available material.

  13. The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN interlayers

    NASA Astrophysics Data System (ADS)

    Arslan, Engin; Duygulu, Özgür; Kaya, Ali Arslan; Teke, Ali; Özçelik, Süleyman; Ozbay, Ekmel

    2009-12-01

    The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin buffer layer of silicon nitride (SiN x) with various thicknesses was achieved through the nitridation of the substrate at different nitridation times ranging from 0 to 660 s. The surface roughness of the GaN film, which was grown on the Si substrate 10 s, exhibited a root mean square (RMS) value of 1.12 nm for the surface roughness. However, further increments in the nitridation times in turn cause increments in the surface roughness in the GaN layers. The number of threading dislocation (TD) was counted from plan-view TEM (Transmission Electron Microscopy) images. The determined density of these threading dislocations was of the order of 9×10 9 cm -2. The sheet resistances of the GaN layers were measured. The average sheet resistance significantly increases from 2867 Ω sq -1 for sample A (without nitridation) to 8124 Ω sq -1 for sample F (with 660 s nitridation). The photoluminescence (PL) measurements of the samples nitridated at various nitridation times were done at a temperature range of 10-300 K. A strong band edge PL emission line, which was centered at approx. 3.453 eV along with its phonon replicas which was separated by approx. 92 meV in successive orders, was observed at 10 K. The full width at half maximum (FWHM) of this peak is approx. 14 meV, which indicates the reasonable optical quality of the GaN epilayers grown on Si substrate. At room temperature, the peak position and FWHM of this emission became 3.396 eV and 58 meV, respectively.

  14. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Wassner, Thomas A.; Laumer, Bernhard; Maier, Stefan; Stutzmann, Martin; Laufer, Andreas; Meyer, Bruno K.; Eickhoff, Martin

    2009-01-15

    Wurtzite Zn{sub 1-x}Mg{sub x}O thin films with Mg contents between x=0 and x=0.37 were grown on c-plane sapphire substrates by plasma assisted molecular beam epitaxy using a MgO/ZnMgO buffer layer. The a-lattice parameter is independent from the Mg concentration, whereas the c-lattice parameter decreases from 5.20 A for x=0 to 5.17 A for x=0.37, indicating pseudomorphic growth. The near band edge photoluminescence shows a blueshift with increasing Mg concentration to an emission energy of 4.11 eV for x=0.37. Simultaneously, the energetic position of the deep defect luminescence shows a linear shift from 2.2 to 2.8 eV. Low temperature transmission measurements reveal strong excitonic features for the investigated composition range and alloy broadening effects for higher Mg contents. The Stokes shift as well as the Urbach energy is increased to values of up to 125 and 54 meV for x=0.37, respectively, indicating exciton localization due to alloy fluctuations.

  15. Hole trapping in thermal oxides grown under various oxidation conditions using avalanche injection in poly-silicon gate structures

    NASA Astrophysics Data System (ADS)

    Anand, K. V.; Cairns, B. R.; Strain, R. J.

    1985-03-01

    I/v data (where I is the dc current and v is the maximum value of the ac applied voltage across the device) was analyzed with respect to the theory and it was shown that the hole temperature not only depends on the substrate doping density and the electric field as measured by the Delta V subscript FB is not only a characteristic of the way that an oxide is grown and annealed, but it also depends on the quality of the substrate and its detailed thermal history. This substrate effect shows itself in the I/v characteristic of a particular device. If the dc current Idc was kept constant at a particular level (as was the case for our experiments), then the v value would represent the temperature of the hot carriers. Since the evidence suggests that the hot carriers generate trap levels, then any change in carrier temperature would reflect in Delta V subscript FB. These substrate related effects were found to be significant.

  16. Morphology and structure of photosensitive dye J-aggregates adsorbed on AgBr microcrystals grown in gelatin.

    PubMed

    Saijo, H; Shiojiri, M

    1998-07-15

    Though the cyanine dye J-aggregates carry the role to sense the exposing light in the silver halide photographic system, little research on the morphology of the aggregates in adsorption has been made with modern surface analytical methods. In this paper, we describe the size, epitaxy, multi-layered array formation, nucleation and preferential adsorption, and irregular distribution of population between particles and the segregation on a particle, of J-aggregates adsorbed on AgBr grown in gelatin. We employed cathodoluminescence microscopy, low energy high resolution scanning electron microscopy, and atomic force microscopy. Dye molecules aggregate together near the surface of AgBr and adsorb on the surface. The growth of adsorbed aggregates is controlled by the diffusion of dye molecules from the surrounding solution. The population of J-aggregates adsorbed on an AgBr particle varies from almost none to full coverage. Each aggregate is about (20-30) x (30-50) nm in size and is 2.1 nm thick for thiacarbocyanine with sodium ion, 1.04 nm for thiacarbocyanine with tosyl ion, and 0.5 nm for an oxacarbocyanine. The aggregates connect their longer edges to each other to form arrays, and the arrays build up multi-layered stacks. The arrays align parallel and segregate to form terraces. The longer edges of J-aggregates align along [210] on AgBr (100) or [632] on AgBr (111). PMID:9728883

  17. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    SciTech Connect

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; Vajtai, Robert; Yakobson, Boris I.; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M.; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  18. Electrical and structural properties of buried CoSi2 layers in Si(100) grown by molecular beam allotaxy

    NASA Astrophysics Data System (ADS)

    Dolle, M.; Gassig, U.; Bay, H. L.; Schueppen, A.; Mantl, S.

    1994-12-01

    Buried, single-crystal CoSi2 layers in Si(100) were fabricated by molecular beam allotaxy, a new two-step method to fabricate buried epitaxial layers. At first CoSi2 precipitates embedded in Si(100) were grown in a molecular beam system. In a second step a continuous, buried silicide layer was formed by rapid thermal annealing. Buried layers with thicknesses ranging from 27 to 224 nm were fabricated and investigated by transmission electron microscopy, Rutherford backscattering, He ion channelling and various electrical methods. Electrical resistivity measurements between 4.2 and 300 K revealed a specific resistivity of 14 micro-Ohm cm at room temperature and 1 micro-Ohm cm at 4.2 K. The temperature dependence follows the Bloch-Grueneisen relation. The resistivity increases with decreasing layer thickness. Schottky diodes were fabricated and characterized using I-V and I-T methods. Excellent diodes were produced with barrier heights of 0.64+/-0.03 eV and idealities of 1.08.

  19. Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sun, H. D.; Clark, A. H.; Calvez, S.; Dawson, M. D.; Kim, K. S.; Kim, T.; Park, Y. J.

    2005-07-01

    We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.

  20. Growth temperature effect on the structural and magnetic properties of Fe{sub 3}O{sub 4} films grown by the self-template method

    SciTech Connect

    Takahashi, R. Misumi, H.; Lippmaa, M.

    2014-07-21

    We have investigated the effect of growth temperature on the structure, surface morphology, and magnetic properties of Fe{sub 3}O{sub 4} thin films grown on SrTiO{sub 3}(001) substrates by a self-template method. To eliminate the intermixing of (001) and (111) orientations that usually occurs in spinel films grown on perovskite substrates, a thin self-template layer of (001)-oriented Fe{sub 3}O{sub 4} was deposited on a SrTiO{sub 3}(001) substrate at 400 °C prior to the main film growth at temperatures of up to 1100 °C. Increasing the growth temperature from 400 °C to 1100 °C resulted in greatly improved crystallinity of the Fe{sub 3}O{sub 4} thin films, with the rocking curve width dropping from 1.41° to 0.28°. Surface analysis by atomic force microscopy showed that raising the growth temperature increased the grain size and the surface roughness, ultimately leading to the formation of regular nanopyramid arrays at 1100 °C. The surface roughening and pyramid formation are caused by the dominance of the lowest surface energy spinel (111) crystal facet. The nanopyramids were fully relaxed but still perfectly (001)-oriented in the out-of-plane direction. The largest pyramids had the lowest coercivity due to a reduction of the demagnetization effect.

  1. Structure and polymer form of poly-3-hydroxyalkanoates produced by Pseudomonas oleovorans grown with mixture of sodium octanoate/undecylenic acid and sodium octanoate/5-phenylvaleric acid.

    PubMed

    Ho, I-Ching; Yang, Sheng-Pin; Chiu, Wen-Yen; Huang, Shih-Yow

    2007-01-30

    PHAs (poly-3-hydroxyalkanoates) obtained by Pseudomonas oleovorans grown with mixed carbon sources were investigated. Mixed carbon sources were sodium octanoate/undecylenic acid and sodium octanoate/5-phenylvaleric acid. Effect of carbon source in pre-culture on PHAs structure was investigated. Main fermentation was conducted with mixture of sodium octanoate/undecylenic acid, and PHA contained both saturated and unsaturated units. When more undecylenic acid was used in the medium, the ratio of unsaturated unit increased and the T(g) of the products also changed. The PHA grown with mixture of sodium octanoate and undecylenic acid was a random copolymer, which was determined by DSC analysis. Using mixed carbon sources of sodium octanoate and 5-phenylvaleric acid, highest dry cell weight and PHA concentration were obtained when 0.02g or 0.04g of 5-phenylvaleric acid were added in 50mL medium. Cultured with sodium octanoate and 5-phenylvaleric acid, PHA containing HO (3-hydroxyoctanoate) unit and HPV (3-hydroxy-5-phenylvalerate) unit was produced. T(g) of the products fell between those of pure PHO and pure PHPV. By means of DSC analysis and fractionation method, the PHA obtained was regarded as a random copolymer. PMID:16919325

  2. Structural and Magnetotransport Studies of MBE-grown Pn(Sn)Te films and PbTe:Bi/CdTe Quantum Wells

    NASA Astrophysics Data System (ADS)

    Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Malgorzata; Wojtowicz, Tomasz

    2014-03-01

    Recent studies confirmed the existence of topological crystalline insulators (TCIs), in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In the narrow-gap semiconductor TCIs, chemical potential can be tuned by modifications of crystal growth and/or annealing to yield n-type or p-type conductivity, which makes them especially well-suited for magnetotransport measurements. In this work, we have grown a series of Pb1-xSnxTe films and PbTe:Bi/CdTe QWs on CdTe/GaAs(100) substrates using MBE. Structural studies of these thin films were carried out using XRD and SEM techniques. XRD results shows satisfactory crystal quality of Pb(Sn)Te films grown on CdTe. SEM studies show the presence of inclusions in the films, indicating that the crystal quality still requires improvement. Magnetostransport studies of PbTe:Bi/CdTe QWs suggests that Bi acts as a donor in PbTe, and the electron mobility in the 2D electron gas in the QW depends on the growth conditions, such as substrate temperature. The study of Pb1-xSnxTe QWs is currently underway, and will also be discussed in this talk.

  3. Structural and magnetoelectric properties of Ga2-xFexO3 single crystals grown by a floating-zone method

    NASA Astrophysics Data System (ADS)

    Arima, T.; Higashiyama, D.; Kaneko, Y.; He, J. P.; Goto, T.; Miyasaka, S.; Kimura, T.; Oikawa, K.; Kamiyama, T.; Kumai, R.; Tokura, Y.

    2004-08-01

    Lattice-structural, magnetic, and magnetoelectric (ME) properties have been investigated for single crystals of prototypical polar ferrimagnet Ga2-xFexO3 (0.8⩽x⩽1.4) as melt-grown by a floating-zone (FZ) method. Magnetization measurements show that the saturated magnetization as well as the ferrimagnetic phase transition temperature (TC) increases with as increase of Fe content x , while the coercive force decreases. A neutron powder diffraction study indicates fairly low ordering of Ga and Fe arrangement at cation sites, which is likely related to the lower TC in the FZ crystals than in the corresponding flux-grown crystals. Coefficients of linear and quadratic ME effects have been obtained with measurements of change in electric polarization induced by sweeping a magnetic field. Electric polarization was largely modulated in a magnetic field applied parallel to the direction of spontaneous magnetization, but not in a field parallel to that of the spontaneous polarization. A simple model to explain the sharp contrast is presented.

  4. Effect of post-annealing temperature on structural and optical properties of ZnO thin films grown on mica substrates using sol-gel spin-coating

    NASA Astrophysics Data System (ADS)

    Kim, Younggyu; Leem, Jae-Young

    2015-09-01

    ZnO thin films were grown on flexible muscovite mica substrates using sol-gel spin-coating. The structural and optical properties of the sol-gel-derived ZnO thin films annealed at temperatures between 300 - 600 °C were investigated. The surface morphology of the ZnO thin films was found to depend slightly on the annealing temperature. In the photoluminescence spectra, the position of the near-band-edge (NBE) peak was shifted towards a lower energy by the post-annealing process, and the full width at half maximum (FWHM) values of the NBE peaks for the annealed ZnO thin films were significantly lower than those for the as-grown film. Defect-related deep-level peaks exhibiting green and red emissions were observed only for the annealed ZnO thin films. The Urbach energy and optical band gap of the films decreased with an increase in annealing temperatures up to 500 °C.

  5. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    NASA Astrophysics Data System (ADS)

    Yang, V. K.; Ting, S. M.; Groenert, M. E.; Bulsara, M. T.; Currie, M. T.; Leitz, C. W.; Fitzgerald, E. A.

    2003-05-01

    In order to study the luminescent efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures with GaAs and Al0.25Ga0.75As cladding layers were grown on several substrates by an atmospheric metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates. The SiGe virtual substrates were graded from Si substrates to 100% Ge content. Because of the small lattice mismatch between GaAs and Ge (0.07%), high-quality GaAs-based thin films with threading dislocation densities <3×106 cm-2 were realized on these SiGe substrates. Quantitative cathodoluminescence was used to compare the luminescent efficiency of the quantum well structure on the different substrates and cross-sectional transmission electron microscopy was used to characterize dislocation densities. Our results show that the InGaAs quantum wells grown on the GaAs substrates have the highest luminescent efficiencies due to the lowest dislocation densities. Interestingly, InGaAs quantum wells grown on the SiGe virtual substrates outperform those on Ge substrates, both in terms of luminescent efficiency and dislocation density. This difference is attributed to the variation in thermal expansion coefficient (α) and its impact on defect structure during the process cycle. The SiGe virtual substrate has a smaller α compared to a Ge substrate because of the smaller α of the Si substrate, which helps minimize compressive strain in the quantum well layer during the temperature decrease from the growth temperature. Consequently, fewer misfit dislocations are created between the quantum well and cladding interfaces. These misfits can greatly affect the luminescent efficiency since they can act as recombination sites. In general, the efficiencies of the quantum wells on the SiGe and Ge substrates were affected only by higher misfit dislocation densities, whereas the quantum wells on the Si substrate had low efficiency due to

  6. A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ramaiah, Kodigala Subba; Su, Y. K.; Chang, S. J.; Chen, C. H.

    2006-02-01

    The blue, green and yellow light emitting diode (LED) structures have been fabricated by metal organic chemical vapor deposition (MOCVD), and characterized by using different techniques, in order to understand the mechanism between these LEDs. Atomic force microscopy (AFM) analysis revealed that the surface roughness value and density of etch pits were different in the blue, green and yellow LEDs. The threading, misfit dislocations, interfacial dislocations, nano-pipe-like structures and quantum dot-like structures, which determine quality of the structures, were observed by transmission electron microscope (TEM) in the LED structures. The reasons for their formation in the layers are now elucidated. The indium composition, period width such as well and barrier widths were determined by simulating experimental high resolution X-ray diffraction (HRXRD) spectra. The In composition obtained by HRXRD and photoluminescence (PL) measurements for the same LED structure was not one and the same due to several reasons. In fact, the InGaN quantum well emission peaks at 2.667 and 2.544 eV of the blue and green LEDs, respectively showed S-shaped character shift, whereas the quantum well peak at 2.219 eV of yellow LEDs did not show any shift in the PL spectra with decreasing temperature. The blue, green and yellow LEDs showed different activation energies.

  7. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates

    NASA Astrophysics Data System (ADS)

    Sugiyama, Hiroki; Teranishi, Atsushi; Suzuki, Safumi; Asada, Masahiro

    2014-03-01

    We report metal-organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current-voltage characteristics with a high peak current density (JP) of around 2 × 105 A/cm2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In0.8Ga0.2As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.

  8. The relationship between electrical and structural characteristics of CdTe and CdMnTe layers grown on InSb

    NASA Astrophysics Data System (ADS)

    Ashenford, D.; Hogg, J. H. C.; Lunn, B.; Scott, C. G.

    1991-06-01

    CdTe and CdMnTe layers with thickness in the range 1-2 μm have been grown by MBE on (001) InSb substrates. Measurements of the free-carrier concentration as a function of depth through these layers have revealed non-unformities attributed to the presence of extended defects arising from the relief of lattice strain resulting from the epilayer-substrate lattice mismatch. Evidence for the existence of such structural non-uniformity has been provided by DCXRD rocking curve measurements. Detailed analysis of these curves also indicates the presence of a thin interfacial layer of a different phase. The use of an excess Cd flux during growth has been found to lead to increased and more uniform carrier densities in both undoped and In doped layers.

  9. Structural properties of free-standing 50 mm diameter GaN waferswith (101_0) orientation grown on LiAlO2

    SciTech Connect

    Jasinski, Jacek; Liliental-Weber, Zuzanna; Maruska, Herbert-Paul; Chai, Bruce H.; Hill, David W.; Chou, Mitch M.C.; Gallagher, John J.; Brown, Stephen

    2005-09-27

    (10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1type. This is consistent with diffraction contrast experiments.

  10. Temporal changes in population genetic diversity and structure in red and white clover grown in three contrasting environments in northern Europe

    PubMed Central

    Collins, Rosemary P.; Helgadóttir, Áslaug; Frankow-Lindberg, Bodil E.; Skøt, Leif; Jones, Charlotte; Skøt, Kirsten P.

    2012-01-01

    Backgound and Aims Extending the cultivation of forage legume species into regions where they are close to the margin of their natural distribution requires knowledge of population responses to environmental stresses. This study was conducted at three north European sites (Iceland, Sweden and the UK) using AFLP markers to analyse changes in genetic structure over time in two population types of red and white clover (Trifolium pratense and T. repens, respectively): (1) standard commercial varieties; (2) wide genetic base (WGB) composite populations constructed from many commercial varieties plus unselected material obtained from germplasm collections. Methods At each site populations were grown in field plots, then randomly sampled after 3–5 years to obtain survivor populations. AFLP markers were used to calculate genetic differentiation within and between original and survivor populations. Key Results No consistent changes in average genetic diversity were observed between original and survivor populations. In both species the original varieties were always genetically distinct from each other. Significant genetic shift was observed in the white clover ‘Ramona’ grown in Sweden. The WGB original populations were more genetically similar. However, genetic differentiation occurred between original and survivor WGB germplasm in both species, particularly in Sweden. Regression of climatic data with genetic differentiation showed that low autumn temperature was the best predictor. Within the set of cold sites the highest level of genetic shift in populations was observed in Sweden. Conclusions The results suggest that changes in population structure can occur within a short time span in forage legumes, resulting in the rapid formation of distinct survivor populations in environmentally challenging sites. PMID:22437665

  11. Synthesis and characterization of wires-like ZnO structures grown on a graphite support by microwave irradiation

    NASA Astrophysics Data System (ADS)

    Mora-Hernández, J. M.; Arce-Estrada, E. M.; Zarazúa-Villalobos, L.; Estrada-Flores, M.; Medina-Flores, J.; Reza-San Germán, C.

    2015-09-01

    Wires-like ZnO structures supported on graphite plates were synthesized by a microwave-assisted method using zinc oxide as precursor which was previously obtained from a chemical oxidation of zinc nitrate hexahydrate. Characterization was made by X-ray diffraction, scanning and high resolution transmission electron microscopy. X-ray diffraction results revealed that homemade ZnO showed the same diffraction peaks as its commercial counterpart, all reflections corresponds to a ZnO wurtzite hexagonal phase. After an irradiation process done at 2.45 GHz and an output power of 1200 W for 7 min, homemade ZnO showed a morphological transformation which can be appreciated in SEM micrographs resulting in the formation of the wires-like ZnO structures; these ones present a broadness between 150 to 200 nm and a variable length from 0.4 to 5 μm. Moreover, energy dispersive spectroscopy reveals that these structures present an entirely elemental zinc oxide composition. Wires-like ZnO structures use carbon plates as a support medium to perform their oriented growing. Finally, high resolution transmission electron microscopy showed that wires-like ZnO structures presents a crystalline arrangement with an interplanar distance of 2.4 Å corresponding to a preferential crystallographic orientation (101).

  12. Structural, electrical and magnetic measurements on oxide layers grown on 316L exposed to liquid lead-bismuth eutectic

    NASA Astrophysics Data System (ADS)

    Hosemann, Peter; Hofer, Christian; Hlawacek, Gregor; Li, Ning; Maloy, Stuart A.; Teichert, Christian

    2012-02-01

    Fast reactors and spallation neutron sources may use lead-bismuth eutectic (LBE) as a coolant. Its physical, chemical, and irradiation properties make it a safe coolant compared to Na cooled designs. However, LBE is a corrosive medium for most steels and container materials. The present study was performed to evaluate the corrosion behavior of the austenitic steel 316L (in two different delivery states). Detailed atomic force microscopy, magnetic force microscopy, conductive atomic force microscopy, and scanning transmission electron microscopy analyses have been performed on the oxide layers to get a better understanding of the corrosion and oxidation mechanisms of austenitic and ferritic/martensitic stainless steel exposed to LBE. The oxide scale formed on the annealed 316L material consisted of multiple layers with different compositions, structures, and properties. The innermost oxide layer maintained the grain structure of what used to be the bulk steel material and shows two phases, while the outermost oxide layer possessed a columnar grain structure.

  13. Colony structure in Ce-doped Al2O3/YAG eutectic systems grown by vertical Bridgman technique

    NASA Astrophysics Data System (ADS)

    Yamada, Seiya; Yoshimura, Masafumi; Sakata, Shin-ichi; Taishi, Toshinori; Hoshikawa, Keigo

    2016-08-01

    We investigated the influence of growth rate and Ce concentration on colony structure variation in Al2O3/YAG:Ce eutectic systems. The distance between boundary zones in the colony structure decreased with increases in either growth rate or Ce concentration. The eutectic spacing in the coarse microstructure in the boundary zone decreased with increasing growth rate but increased with increasing Ce concentration. We conclude that the colony structure is formed by cellular growth driven by constitutional supercooling with an interface instability due to Ce atom accumulation, so that the distance between boundary zones depends on both the growth rate and Ce concentration, and the coarse microstructure in the boundary zone depends on the solidification rate perpendicular to the growth interface at the cell bottom of the microscopic growth interface shape in the cellular growth.

  14. Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

    NASA Astrophysics Data System (ADS)

    Kolobov, A. V.; Fons, P.; Krbal, M.; Tominaga, J.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R.; Uruga, T.

    2015-03-01

    GeTe is an end-point of the GeTe-Sb2Te3 quasibinary alloys often referred to as phase-change memory materials. The polycrystalline nature of the crystalline films used in devices and the concomitant presence of grain boundaries complicate detailed structural studies of the local structure. Recent progress in the epitaxial growth of phase-change materials offers unique possibilities for precise structural investigations. In this work, we report on results of x-ray absorption near-edge structure (XANES) studies of GeTe and Ge2Sb2Te5 epitaxial films grown on Si and InAs substrates with (100) and (111) orientations. The results show a strong dependence of the local structure on the substrate material and especially orientation and are discussed in conjunction with polycrystalline samples and ab-initio XANES simulations.

  15. Cellular porous anodic alumina grown in neutral organic electrolyte. 1. Structure, composition, and properties of the films

    SciTech Connect

    Liu, Y.; Alwitt, R.S.; Shimizu, K.

    2000-04-01

    Anodic alumina films with cellular porous structure grow in neutral organic electrolytes with low water content and containing ethylene glycol and a large dicarboxylic acid. An Al carboxylate precipitates in the pore and is extruded from the coating. The porous structure develops even though the current efficiency for film formation is near 95%. The coating matrix contains substantial organic material, 15 wt % by thermal analysis. It is an oxide/organic composite with higher field strength and lower dielectric constant than pure anodic alumina.

  16. Evolution of morphology and structure of Pb thin films grown by pulsed laser deposition at different substrate temperatures

    SciTech Connect

    Lorusso, Antonella Maiolo, Berlinda; Perrone, Alessio; Gontad, Francisco; Maruccio, Giuseppe; Tasco, Vittorianna

    2014-03-15

    Pb thin films were prepared by pulsed laser deposition on a Si (100) substrate at different growth temperatures to investigate their morphology and structure. The morphological analysis of the thin metal films showed the formation of spherical submicrometer grains whose average size decreased with temperature. X-ray diffraction measurements confirmed that growth temperature influences the Pb polycrystalline film structure. A preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C and became increasingly pronounced along the Pb (200) plane as the substrate temperature increased. These thin films could be used to synthesize innovative materials, such as metallic photocathodes, with improved photoemission performances.

  17. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  18. A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

    NASA Astrophysics Data System (ADS)

    de la Mata, Maria; Zhou, Xiang; Furtmayr, Florian; Teubert, Jörg; Gradecak, Silvija; Eickhoff, Martin; Fontcuberta i Morral, Anna; Arbiol, Jordi

    2013-05-01

    We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting with the well-known axial, radial (coaxial/prismatic) or polytypic quantum wells in GaN/AlN, GaAs/AlAs or wurtzite/zinc-blende systems, respectively, we move to more sophisticated structures by lowering their dimensionality. New recent approaches developed for the self-assembly of GaN quantum wires and InAs or AlGaAs quantum dots on single nanowire templates are reported and discussed. Aberration corrected scanning transmission electron microcopy is presented as a powerful tool to determine the structure and morphology at the atomic scale allowing for the creation of 3D atomic models that can help us to understand the enhanced optical properties of these advanced quantum structures.

  19. SEM and Raman spectroscopy analyses of laser-induced periodic surface structures grown by ethanol-assisted femtosecond laser ablation of chromium

    NASA Astrophysics Data System (ADS)

    Bashir, Shazia; Shahid Rafique, M.; Nathala, Chandra S. R.; Ajami, Ali; Husinsky, Wolfgang

    2015-05-01

    The effect of fluence and pulse duration on the growth of nanostructures on chromium (Cr) surfaces has been investigated upon irradiation of femtosecond (fs) laser pulses in a liquid confined environment of ethanol. In order to explore the effect of fluence, targets were exposed to 1000 pulses at various peak fluences ranging from 4.7 to 11.8 J cm-2 for pulse duration of ∼25 fs. In order to explore the effect of pulse duration, targets were exposed to fs laser pulses of various pulse durations ranging from 25 to 100 fs, for a constant fluence of 11.8 J cm-2. Surface morphology and structural transformations have been analyzed by scanning electron microscopy and Raman spectroscopy, respectively. After laser irradiation, disordered sputtered surface with intense melting and cracking is obtained at the central ablated areas, which are augmented with increasing laser fluence due to enhanced thermal effects. At the peripheral ablated areas, where local fluence is approximately in the range of 1.4-4 mJ cm-2, very well-defined laser-induced periodic surface structures (LIPSS) with periodicity ranging from 270 to 370 nm along with dot-like structures are formed. As far as the pulse duration is concerned, a significant effect on the surface modification of Cr has been revealed. In the central ablated areas, for the shortest pulse duration (25 fs), only melting has been observed. However, LIPSS with dot-like structures and droplets have been grown for longer pulse durations. The periodicity of LIPSS increases and density of dot-like structures decreases with increasing pulse duration. The chemical and structural modifications of irradiated Cr have been revealed by Raman spectroscopy. It confirms the formation of new bands of chromium oxides and enol complexes or Cr-carbonyl compounds. The peak intensities of identified bands are dependent upon laser fluence and pulse duration.

  20. Magnitude differences in agronomic, chemical, nutritional, and structural features among different varieties of forage corn grown on dry land and irrigated land.

    PubMed

    Xin, Hangshu; Abeysekara, Samen; Zhang, Xuewei; Yu, Peiqiang

    2015-03-11

    In this study, eight varieties of corn forage grown in semiarid western Canada (including Pioneer P2501, Pioneer P39m26, Pioneer P7443, Hyland HL3085, Hyland HLBaxxos, Hyland HLR219, Hyland HLSR22, and Pickseed Silex BT) were selected to explore the effect of irrigation implementation in comparison with nonirrigation on (1) agronomic characteristics, (2) basic chemical profiles explored by using a near-infrared reflectance (NIR) system, and (3) protein and carbohydrate internal structural parameters revealed by using an attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) system. Also, principal component analysis (PCA) was performed on spectroscopic data for clarification of differences in molecular structural makeup among the varieties. The results showed that irrigation treatment significantly increased (P < 0.05) contents of dry matter (DM) and organic matter (OM) but decreased crude protein (CP) of corn forages. Significant interactions of irrigation treatment and corn variety were observed on most agronomic characteristics (DM yield, T/ha, days to tasseling, days to silking) and crude fiber (CF) and ether extract (EE) contents as well as some spectral data such as cellulosic compounds (CELC) peak intensity, peak ratios of CHO third peak to CELC, α-helix to β-sheet, and CHO third peak to amide I. Additionally, the spectral ratios of chemical functional groups that related to structural and nonstructural carbohydrates and protein polymers in forages did not remain constant over corn varieties cultivated with and without water treatment. Moreover, different cultivars had different growth, structure, and nutrition performances in this study. Although significant differences could be found in peak intensities, PCA results indicated some structural similarities existed between two treated corn forages with the exception of HL3085 and HLBaxxos. In conclusion, irrigation and corn variety had interaction effects on agronomic, chemical

  1. Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films

    NASA Astrophysics Data System (ADS)

    Najar, Adel; Omi, Hiroo; Tawara, Takehiko

    2014-07-01

    Polycrystalline Er-Sc silicates (Er x Sc2- x Si2O7 and Er x Sc2- x SiO5) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er x Sc2- x Si2O7 is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO2 interlayers. The Er concentration of 6.7 × 1021 atoms/cm3 was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10-15 cm2/s at 1,250°C. The dominant Er x Sc2 - x Si2O7 layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc3+ which enhance the crystal field strength affecting the optical properties of Er3+ ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices.

  2. Non-destructive mapping of doping and structural composition of MOVPE-grown high current density resonant tunnelling diodes through photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Jacobs, K. J. P.; Stevens, B. J.; Mukai, T.; Ohnishi, D.; Hogg, R. A.

    2015-05-01

    We report on photoluminescence (PL) characterisation of metal-organic vapour phase epitaxy (MOVPE) grown high current density (~700 kA/cm2) InGaAs/AlAs/InP based resonant tunnelling diodes (RTDs) for terahertz emission. The PL mapping we describe allows important information about doping level and uniformity, ternary alloy composition and uniformity, and uniformity of quantum well thickness to be deduced. PL as a function of doping concentration is studied for InGaAs test layers at low temperatures and correlated to secondary-ion mass spectroscopy (SIMS) and electrochemical capacitance-voltage (eCV) profiling to provide non-destructive mapping of doping over the wafer. For the RTD structures, we utilise eCV as a selective etch tool to identify the origin of low temperature PL emission from the quantum well (QW) and the highly doped contact layers. PL mapping of the RTD wafer at low temperatures is shown to allow the assessment of variations in InGaAs alloy composition and QW thickness. Details of the growth process are discussed and confirmed using high resolution X-ray diffraction (HRXRD) crystallography. The rapid non-destructive characterisation and wafer mapping of these structures promises a route to future growth optimisation of such structures.

  3. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    SciTech Connect

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David; Marcus, Matthew A.; Tarafder, Kartick

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  4. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  5. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates

    SciTech Connect

    Galiev, G. B.; Vasil'evskii, I. S.; Imamov, R. M.; Klimov, E. A.; Pushkarev, S. S.; Subbotin, I. A.

    2011-09-15

    A complex study of the structural and electrical properties of nanoheterostructures containing a metamorphic barrier with a high InAs content (37-100%) in the active region have been performed by the Van der Pauw and X-ray diffraction methods. All peaks observed in the rocking curves for the samples studied (throughout the entire structure) have been revealed and identified. It is shown that, having properly chosen the design of the metamorphic buffer and the compositional gradient in it, one can obtain mobilities and concentrations of the 2D electron gas in the In{sub x}Ga{sub 1-x}As quantum well in the heterostructures formed on GaAs substrates that are comparable with the corresponding values for the nanoheterostructures grown on InP substrates. It is established that the mobility and concentration of 2D electron gas depend both on the metamorphic barrier design and on the structural quality of heterostructure as a whole.

  6. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    SciTech Connect

    Hawley, Marilyn E; Biegalski, Michael D; Schlom, Darrell G

    2008-01-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  7. Magnetic and structural properties of ultrafine Ni-Zn-Cu ferrite grown by a sol-gel method

    NASA Astrophysics Data System (ADS)

    Kim, Woo Chul; Park, Seung Iel; Kim, Sam Jin; Lee, Seung Wha; Kim, Chul Sung

    2000-05-01

    Ultrafine Ni0.65Zn0.35Cu0.2Fe1.8O4 particles were fabricated by a sol-gel method. The magnetic and structural properties of the powders were investigated with x-ray diffraction, vibrating sample magnetometer, and Mössbauer spectroscopy. Ni-Zn-Cu ferrite powders that were fired at and above 823 K have only a single phase spinel structure and behave ferrimagnetically. Powders annealed at 523, 623, and 723 K have a typical spinel structure and are simultaneously paramagnetic and ferrimagnetic in nature. The magnetic behavior of Ni-Zn-Cu ferrite powders fired at and above 623 K showed that an increase of the annealing temperature yielded a decrease of the coercivity and an increase of the saturation magnetization. The maximum coercivity and the saturation magnetization of Ni-Zn-Cu ferrite powders were Hc=96 Oe and Ms=68 emu/g. Mössbauer spectra of powder annealed at 1223 K were taken at various temperatures ranging from 12 to 675 K. As the temperature increased toward TN, a systematic line broadening effect in the Mössbauer spectra was observed and was interpreted as originating from the different temperature dependencies of the magnetic hyperfine fields at various iron sites. The isomer shifts indicated that the iron ions were ferric at the tetrahedral [A] and the octahedral site [B]. The Néel temperature was determined to be TN=675±2 K.

  8. Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations

    PubMed Central

    Resta, Andrea; Leoni, Thomas; Barth, Clemens; Ranguis, Alain; Becker, Conrad; Bruhn, Thomas; Vogt, Patrick; Le Lay, Guy

    2013-01-01

    Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (√3 × √3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (√7 × √7)R ± 19.1° rotated silicene domains in the first layer. PMID:23928998

  9. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    SciTech Connect

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da; Leite, Douglas M. G.; Bortoleto, José R. R.

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  10. Altered physiological function, not structure, drives increased radiation-use efficiency of soybean grown at elevated CO2.

    PubMed

    Rascher, Uwe; Biskup, Bernhard; Leakey, Andrew D B; McGrath, Justin M; Ainsworth, Elizabeth A

    2010-07-01

    Previous studies of elevated carbon dioxide concentration ([CO(2)]) on crop canopies have found that radiation-use efficiency is increased more than radiation-interception efficiency. It is assumed that increased radiation-use efficiency is due to changes in leaf-level physiology; however, canopy structure can affect radiation-use efficiency if leaves are displayed in a manner that optimizes their physiological capacity, even though the canopy intercepts the same amount of light. In order to determine the contributions of physiology and canopy structure to radiation-use and radiation-interception efficiency, this study relates leaf-level physiology and leaf display to photosynthetic rate of the outer canopy. We used a new imaging approach that delivers three-dimensional maps of the outer canopy during the growing season. The 3D data were used to model leaf orientation and mean photosynthetic electron transport of the outer canopy to show that leaf orientation changes did not contribute to increased radiation-use; i.e. leaves of the outer canopy showed similar diurnal leaf movements and leaf orientation in both treatments. Elevated [CO(2)] resulted in an increased maximum electron transport rate (ETR(max)) of light reactions of photosynthesis. Modeling of canopy light interception showed that stimulated leaf-level electron transport at elevated [CO(2)], and not alterations in leaf orientation, was associated with stimulated radiation-use efficiency and biomass production in elevated [CO(2)]. This study provides proof of concept of methodology to quantify structure-function relationships in combination, allowing a quantitative estimate of the contribution of both effects to canopy energy conversion under elevated [CO(2)]. PMID:20407832

  11. Single crystals of DPPH grown from diethyl ether and carbon disulfide solutions - Crystal structures, IR, EPR and magnetization studies

    NASA Astrophysics Data System (ADS)

    Žilić, Dijana; Pajić, Damir; Jurić, Marijana; Molčanov, Krešimir; Rakvin, Boris; Planinić, Pavica; Zadro, Krešo

    2010-11-01

    Single crystals of the free radical 2,2-diphenyl-1-picrylhydrazyl (DPPH) obtained from diethyl ether (ether) and carbon disulfide (CS2) were characterized by the X-ray diffraction, IR, EPR and SQUID magnetization techniques. The X-ray structural analysis and IR spectra showed that the DPPH form crystallized from ether (DPPH1) is solvent free, whereas that one obtained from CS2 (DPPH2) is a solvate of the composition 4DPPH·CS2. Principal values of the g-tensor were estimated by the X-band EPR spectroscopy at room and low (10 K) temperatures. Magnetization studies revealed the presence of antiferromagnetically coupled dimers in both types of crystals. However, the way of dimerization as well as the strength of exchange couplings are different in the two DPPH samples, which is in accord with their crystal structures. The obtained results improved parameters accuracy and enabled better understanding of properties of DPPH as a standard sample in the EPR spectrometry.

  12. Single crystals of DPPH grown from diethyl ether and carbon disulfide solutions - crystal structures, IR, EPR and magnetization studies.

    PubMed

    Zilić, Dijana; Pajić, Damir; Jurić, Marijana; Molčanov, Krešimir; Rakvin, Boris; Planinić, Pavica; Zadro, Krešo

    2010-11-01

    Single crystals of the free radical 2,2-diphenyl-1-picrylhydrazyl (DPPH) obtained from diethyl ether (ether) and carbon disulfide (CS₂) were characterized by the X-ray diffraction, IR, EPR and SQUID magnetization techniques. The X-ray structural analysis and IR spectra showed that the DPPH form crystallized from ether (DPPH1) is solvent free, whereas that one obtained from CS₂ (DPPH2) is a solvate of the composition 4DPPH·CS₂. Principal values of the g-tensor were estimated by the X-band EPR spectroscopy at room and low (10 K) temperatures. Magnetization studies revealed the presence of antiferromagnetically coupled dimers in both types of crystals. However, the way of dimerization as well as the strength of exchange couplings are different in the two DPPH samples, which is in accord with their crystal structures. The obtained results improved parameters accuracy and enabled better understanding of properties of DPPH as a standard sample in the EPR spectrometry. PMID:20833090

  13. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates.

    PubMed

    Brehm, Moritz; Groiss, Heiko; Bauer, Günther; Gerthsen, Dagmar; Clarke, Roy; Paltiel, Yossi; Yacoby, Yizhak

    2015-12-01

    We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. PMID:26553384

  14. Structural morphological and optoelectronic study of titania and gold doped titania nanoparticles grown by sol-gel technique

    NASA Astrophysics Data System (ADS)

    Jadhav, Yogesh A.; Gattu, Ketan P.; Ghule, Anil; Sharma, Ramphal

    2013-02-01

    Here in this work, the titania (TiO2), gold ion doped titania (Au+3TiO2) and gold nanoparticles doped titania (Au NPs TiO2) have been prepared by sol-gel technique. In a typical synthesis titanium tetrachloride (TiCl4) is treated with citric acid in presence of methanol as solvents, forms titanium citrate complex sol at 40°C. This sol forms a viscous gel after 2 h of stirring and heating at 60 °C. The pre-synthesized Au+3 ions and Au NPs were then added drop wise to the titanium citrate complex sol to form gold ion doped titania (Au+3TiO2) and gold nanoparticles doped titania. The products obtained were calcined at 700 °C. The obtained particles were studied for their structural, morphological, optical and electrical properties.

  15. Structural and morphological studies on Bi1-xCaxMnO3 thin films grown by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Pugazhvadivu, K. S.; Santhiya, M.; Balakrishnan, L.; Tamilarasan, K.

    2016-05-01

    Bi1-xCaxMnO3 (0 ≤ X ≤ 0.4) thin films are deposited on n-type Si (100) substrate at 800 °C by RF magnetron sputtering. X-ray diffraction pattern shows that the films are crystallized in monoclinic structure with C2 space group. The crystallite size and induced strain in the prepared films are measured by W-H plot. The cell parameters and texture coefficient of the films are calculated. The surface morphology of the films is examined by atomic force microscope. The study confirms the optimum level of calcium doping is 20 at. % in Bi site of BiMnO3 film, these findings pave the way for further research in the Ca modified BiMnO3 films towards device fabrication.

  16. Charge Dynamics and Electronic Structures of Monolayer MoS2 Films Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Shen, Chih-Chiang; Hsu, Yu-Te; Li, Lain-Jong; Liu, Hsiang-Lin

    2013-12-01

    THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapor-deposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (˜7 THz) decreases with decreasing temperature while carrier relaxation time (˜26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ˜0.2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

  17. Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates

    NASA Astrophysics Data System (ADS)

    Brehm, Moritz; Groiss, Heiko; Bauer, Günther; Gerthsen, Dagmar; Clarke, Roy; Paltiel, Yossi; Yacoby, Yizhak

    2015-12-01

    We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.

  18. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Mitsuhara, M.; Watanabe, N.; Yokoyama, H.; Iga, R.; Shigekawa, N.

    2016-09-01

    We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap energy of around 1.7 eV for solar cell applications. In transmission electron microscopy images, noticeable thickness modulation was observed in the barrier layers for a sample grown at the substrate temperature of 530 °C. Meanwhile, the X-ray diffraction patterns indicated that strain relaxation predominantly occurred in the well layers. Decreasing the substrate temperature from 530 to 510 °C was effective in suppressing both the thickness modulation and strain relaxation. Additionally, increasing the growth rate of the well layer further suppressed the thickness modulation. In room-temperature photoluminescence (PL) emission spectra, the sample grown at 510 °C showed approximately 50 times higher PL peak intensity than the one grown at 530 °C.

  19. Ca10Li(VO4)7:Nd3+, a promising laser material: growth, structure and spectral characteristics of a Czochralski-grown single crystal

    NASA Astrophysics Data System (ADS)

    Kosmyna, M. B.; Nazarenko, B. P.; Puzikov, V. M.; Shekhovtsov, A. N.; Paszkowicz, W.; Behrooz, A.; Romanowski, P.; Yasukevich, A. S.; Kuleshov, N. V.; Demesh, M. P.; Wierzchowski, W.; Wieteska, K.; Paulmann, C.

    2016-07-01

    Pure and Nd-doped Ca10Li(VO4)7 single crystals were grown by the Czochralski method. The structure of Ca10Li(VO4)7 single crystal was refined starting from a model of Ca10K(VO4)7 using the powder diffraction data collected at a laboratory high-resolution diffractometer. The defect structure of the single crystal was studied with the use of both, high-resolution diffraction using a laboratory instrument and X-ray topographic techniques employing synchrotron radiation at the Hasylab laboratory (Hamburg). Polarized absorption and luminescence spectra of Nd-doped Ca10Li(VO4)7 crystal were investigated in details. The laser oscillation was obtained under flash lamp pumping and the slope efficiency of 0.87% was achieved in the free-running mode. Preliminary examination of lasing properties points that Ca10Li(VO4)7:Nd crystal can be a highly efficient solid state laser medium. Crystals of this kind are expected to be suitable for application as efficient non-linear optics materials.

  20. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.

    2015-05-01

    Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  1. Structural and dynamical properties of Bridgman-grown CdSexTe1-x (0

    NASA Astrophysics Data System (ADS)

    Talwar, Devki N.; Feng, Zhe Chuan; Lee, Jyh-Fu; Becla, P.

    2013-04-01

    Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe1-xSex (0.35 ≥ x > 0.05) ternary alloys to empathize their lattice dynamical and structural properties. Low-temperature Raman spectra have revealed the classic CdTe-like (TO1, LO1) and CdSe-like (TO2, LO2) pairs of optical phonons. The composition-dependent peak positions of the LO2 modes exhibited shifts towards the higher-energy side, while those of the LO1 phonon frequencies have unveiled the slight redshifts. Detailed analyses of EXAFS data by using the first-principles bond orbital model have enabled us to estimate both the lattice relaxations and nearest-neighbor radial force constants around the Se/Te atoms in the CdTe/CdSe matrix. These results are methodically integrated in the “average t-matrix” formalism within the Green's-function theory for defining the impurity perturbations to comprehend the composition-dependent optical phonons in CdTe1-xSex alloys. Based on our comprehensive calculations of impurity modes in the low-composition regime x→ 0, we have assigned the weak phonon feature observed near ˜175 cm-1 in the low-temperature infrared reflectivity spectroscopy study to a SeTe localized vibrational mode.

  2. Extended x-ray absorption fine structure and micro-Raman spectra of Bridgman grown Cd1-xZnxTe ternary alloys

    NASA Astrophysics Data System (ADS)

    Talwar, Devki N.; Feng, Zhe Chuan; Lee, Jyh-Fu; Becla, P.

    2014-03-01

    We have performed low-temperature micro-Raman scattering and extended x-ray absorption fine-structure (EXAFS) measurements on the Bridgman-grown bulk zinc-blende Cd1-x Zn x Te (1.0 ≧̸ x ≧̸ 0.03) ternary alloys to comprehend their structural and lattice dynamical properties. The micro-Raman results are carefully appraised to authenticate the classical two-phonon mode behavior insinuated by far-infrared (FIR) reflectivity study. The composition-dependent EXAFS experiments have revealed a bimodal distribution of the nearest-neighbor bond lengths—its analysis by first-principles bond-orbital model enabled us to estimate the lattice relaxations around Zn/Cd atoms in CdTe/ZnTe to help evaluate the necessary force constant variations for constructing the impurity-perturbation matrices. The simulated results of impurity vibrational modes by average-t-matrix Green’s function (ATM-GF) theory has put our experimental findings of the gap mode ˜153 cm-1 near x ≈ 1 on a much firmer ground.

  3. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  4. Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures

    SciTech Connect

    Fritz, I.J.; Blum, O.; Schneider, R.P. Jr.; Howard, A.J.; Follstaedt, D.M.

    1993-12-31

    The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator applications.

  5. Role of deposition time on structural, optical and electrical properties of In-rich Cu-In-S spinel films grown by electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Gannouni, M.; Ben Assaker, I.; Chtourou, R.

    2013-09-01

    CuIn5S8 spinel films were grown at different deposition times onto (ITO)-coated glass substrates using a one-step electrodeposition route of In-rich Cu-In-S system. A contribution to the knowledge of thickness (or deposition time) dependence of structural, morphological, optical, and electrical properties of CuIn5S8 thin film is reported. According to these studies, when the deposition time is extended beyond 10 min, X-ray diffraction pattern has indicated a growth mode along the (3 1 1) plane which is consistent with the CuIn5S8 cubic spinel structure. XRD peaks broaden and shift depending on film thicknesses which are presumably due to strain and size effect. From AFM analysis, nucleus density, size, roughness, as well as film thickness have increased with increasing deposition time from 1 to 30 min. Through optical measurements, both values of transmittance and band gap have decreased respectively from approximately (˜77%) to (˜40%) and from 2.75 eV to 1.53 eV with the increase of deposition time. The film deposited at 15 min shows a minimum electrical resistivity of about 3.12 × 10-3 Ω cm. It is also reported that by controlling the electrodeposition time, n-type or p-type conductivity of CuIn5S8 could be adjusted.

  6. Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.

    PubMed

    Jana, Debanjan; Chakrabarti, Somsubhra; Rahaman, Sheikh Ziaur; Maikap, Siddheswar

    2015-12-01

    It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale Res. Lett., 2015, however, optical switching characteristics by using thermally grown Ge0.2Se0.8 film in Cu/GeSex/W structure are reported for the first time in this study. The Cu/GeSex/W memory devices have low current compliances (CCs) ranging from 1 nA to 500 μA with low voltage of ±1.2 V, high resistance ratio of approximately 10(3), stable endurance of >200 cycles, and good data retention of >7 × 10(3) s at 85 °C. Multi-steps of RESET phenomena and evolution of Cu filaments' shape under CCs ranging from 1 nA to 500 μA have been discussed. Under external white-light illumination with an intensity of 2.68 mW/cm(2) (wavelength ranges from 390 to 700 nm), memory device shows optical switching with long read pulse endurance of >10(5) cycles. This CBRAM device has optically programmed and electrically erased, which can open up a new area of research field for future application. PMID:26446075

  7. Structural and optical properties of La-doped BaSnO3 thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    James, K. K.; Krishnaprasad, P. S.; Hasna, K.; Jayaraj, M. K.

    2015-01-01

    In this study the structural and optical properties of lanthanum-doped BaSnO3 powder samples and thin films deposited on fused silica were investigaed using laser ablation. Under an oxygen pressure of 5×10-4 mbar, phase pure BaSnO3 films with a lattice constant of 0.417 nm and grain size of 21 nm were prepared at 630 °C. The band gap of BaSnO3 powder sample and thin films was calculated to be 3.36 eV and 3.67 eV, respectively. There was a progressive increase in conductivity for thin films of BaSnO3 doped with 0~7 at% of La. The highest conductivity, 9 Scm-1, was obtained for 7 at% La-doped BaSnO3. Carrier concentration, obtained from Burstein-Moss (B-M) shift, nearly matches the measured values except for 3 at% and 10 at% La-doped BaSnO3 thin films.

  8. Co2FeAl thin films grown on MgO substrates: Correlation between static, dynamic, and structural properties

    NASA Astrophysics Data System (ADS)

    Belmeguenai, M.; Tuzcuoglu, H.; Gabor, M. S.; Petrisor, T., Jr.; Tiusan, C.; Berling, D.; Zighem, F.; Chauveau, T.; Chérif, S. M.; Moch, P.

    2013-05-01

    Co2FeAl (CFA) thin films with thickness varying from 10 to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by a Ta or Cr layer. X-ray diffraction (XRD) revealed that the cubic [001] CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the B2 phase to the A2 phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer (VSM) measurements show that, depending on the field orientation, one- or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance (FMR), MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependencies of the ferromagnetic resonance linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.

  9. Structural Complexity of Non-acid Glycosphingolipids in Human Embryonic Stem Cells Grown under Feeder-free Conditions*

    PubMed Central

    Barone, Angela; Benktander, John; Ångström, Jonas; Aspegren, Anders; Björquist, Petter; Teneberg, Susann; Breimer, Michael. E.

    2013-01-01

    Due to their pluripotency and growth capability, there are great expectations for human embryonic stem cells, both as a resource for functional studies of early human development and as a renewable source of cells for use in regenerative medicine and transplantation. However, to bring human embryonic stem cells into clinical applications, their cell surface antigen expression and its chemical structural complexity have to be defined. In the present study, total non-acid glycosphingolipid fractions were isolated from two human embryonic stem cell lines (SA121 and SA181) originating from leftover in vitro fertilized human embryos, using large amounts of starting material (1 × 109 cells/cell line). The total non-acid glycosphingolipid fractions were characterized by antibody and lectin binding, mass spectrometry, and proton NMR. In addition to the globo-series and type 1 core chain glycosphingolipids previously described in human embryonic stem cells, a number of type 2 core chain glycosphingolipids (neo-lactotetraosylceramide, the H type 2 pentaosylceramide, the Lex pentaosylceramide, and the Ley hexaosylceramide) were identified as well as the blood group A type 1 hexaosylceramide. Finally, the mono-, di-, and triglycosylceramides were characterized as galactosylceramide, glucosylceramide, lactosylceramide, galabiaosylceramide, globotriaosylceramide, and lactotriaosylceramide. Thus, the glycan diversity of human embryonic stem cells, including cell surface immune determinants, is more complex than previously appreciated. PMID:23404501

  10. Effect of substrate temperature on structure and luminescence properties of YVO4:Eu3+ thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    Foka, K. E.; Dejene, B. F.; Swart, H. C.

    2016-03-01

    YVO4:Eu3+ thin films were deposited by pulse laser deposition at substrate temperatures of 200, 300 and 400 °C. The oxygen deposition background pressure was also changed from 20 to 85 mTorr at a substrate temperature of 400 °C. The films deposited at the higher temperatures showed a tetragonal phase in consistent with the standard JCPDS card 17-0341. The X-ray diffraction patterns obtained from the 200 °C sample showed only a very small peak at the (200) orientation. The other phosphor thin film showed an improved crystalline structure when the temperature was increased. Scanning electron microscope images indicated larger particles on the surface at the higher temperatures. Atomic force microscopy results showed smooth surfaces with small particles at lower temperatures and an increase in surface roughness at higher temperatures due to the improvement in crystallinity. The photoluminescence showed the typical emission peaks of Eu3+ in the red region at 594 and 618 nm attributed to the 5D0-7F1 and 5D0-7F2 transitions. The peaks at 652 and 699 nm corresponding to the 5D0-7F3 and 5D0-7F4 transitions were also observed. The spectra showed an increase in PL intensity when the deposition temperature and oxygen pressure were increased.

  11. Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

    SciTech Connect

    Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling Wu, Ming-Guei; Tzou, An-Jye; Chen, Jyh Shin; Chou, Hsiung

    2015-05-15

    AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructed with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.

  12. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  13. (abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

    1994-01-01

    The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

  14. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    NASA Astrophysics Data System (ADS)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-01

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 μm and 0.095 μm for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  15. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    SciTech Connect

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  16. Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

    NASA Astrophysics Data System (ADS)

    Dönmez, Ömer; Sarcan, Fahrettin; Erol, Ayse; Gunes, Mustafa; Arikan, Mehmet Çetin; Puustinen, Janne; Guina, Mircea

    2014-03-01

    We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - x In x N y As1 - y ( x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-resolved Shubnikov de Haas (SdH) oscillations are observed at magnetic fields as low as 3 T and persist to temperatures as high as 20 K, which are used to determine effective mass, 2D carrier density, and Fermi energy. The analysis of temperature dependence of SdH oscillations revealed that the electron mass enhances with increasing nitrogen content. Furthermore, even the current theory of dilute nitrides does not predict a change in hole effective mass; nitrogen dependency of hole effective mass is found and attributed to both strain- and confinement-induced effects on the valence band. Both electron and hole effective masses are changed after thermal annealing process. Although all samples were doped with the same density, the presence of nitrogen in n-type material gives rise to an enhancement in the 2D electron density compared to the 2D hole density as a result of enhanced effective mass due to the effect of nitrogen on conduction band. Our results reveal that effective mass and 2D carrier density can be tailored by nitrogen composition and thermal annealing-induced effects.

  17. Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates

    NASA Astrophysics Data System (ADS)

    Takeuchi, Shotaro; Sakai, Akira; Yamamoto, Koji; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki

    2007-01-01

    We have performed growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on Si(0 0 1), virtual Ge(0 0 1) and bulk Ge(0 0 1) substrates. In the case of Si(0 0 1), amorphous Ge1-xSnx phases are partially formed as well as many threading dislocations in Ge0.98Sn0.02 layers. Employing virtual Ge substrates to reduce the lattice mismatch at the interface leads to epitaxial Ge0.978Sn0.022 layers with a flat surface. Most of threading dislocations in the Ge0.978Sn0.022 layer comes from pre-existing ones in the virtual Ge substrate and propagates laterally, leaving misfit segments at the Ge0.978Sn0.022/virtual Ge interface, after post-deposition annealing (PDA). This simultaneously results in the reduction of threading dislocation density and the promotion of strain relaxation. In the case of bulk Ge(0 0 1), although low threading dislocation density can be achieved, less than 106 cm-2, the film exhibits surface undulation and a lesser degree of strain relaxation even after PDA.

  18. Hierarchical Sandwich-Like Structure of Ultrafine N-Rich Porous Carbon Nanospheres Grown on Graphene Sheets as Superior Lithium-Ion Battery Anodes.

    PubMed

    Xie, Zhiqiang; He, Ziyang; Feng, Xuhui; Xu, Wangwang; Cui, Xiaodan; Zhang, Jiuhong; Yan, Cheng; Carreon, Moises A; Liu, Zheng; Wang, Ying

    2016-04-27

    A sandwich-like, graphene-based porous nitrogen-doped carbon (PNCs@Gr) has been prepared through facile pyrolysis of zeolitic imidazolate framework nanoparticles in situ grown on graphene oxide (GO) (ZIF-8@GO). Such sandwich-like nanostructure can be used as anode material in lithium ion batteries, exhibiting remarkable capacities, outstanding rate capability, and cycling performances that are some of the best results among carbonaceous electrode materials and exceed most metal oxide-based anode materials derived from metal orgainc frameworks (MOFs). Apart from a high initial capacity of 1378 mAh g(-1) at 100 mA g(-1), this PNCs@Gr electrode can be cycled at high specific currents of 500 and 1000 mA g(-1) with very stable reversible capacities of 1070 and 948 mAh g(-1) to 100 and 200 cycles, respectively. At a higher specific current of 5000 mA g(-1), the electrode still delivers a reversible capacity of over 530 mAh g(-1) after 400 cycles, showing a capacity retention of as high as 84.4%. Such an impressive electrochemical performance is ascribed to the ideal combination of hierarchically porous structure, a highly conductive graphene platform, and high-level nitrogen doping in the sandwich-like PNCs@Gr electrode obtained via in situ synthesis. PMID:27071473

  19. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

    SciTech Connect

    Bouhafs, C. Darakchieva, V.; Persson, I. L.; Persson, P. O. Å.; Yakimova, R.; Tiberj, A.; Paillet, M.; Zahab, A.-A.; Landois, P.; Juillaguet, S.; Schöche, S.; Schubert, M.

    2015-02-28

    Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.

  20. Structural and optical analyses of AlxGa1-xN thin films grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kucukgok, Bahadir; Lu, Na; Ferguson, Ian T.; Wang, Shu Chang; Zhang, Xiong; Feng, Zhe Chuan

    2015-02-01

    A series of AlxGa1-xN thin films with x = 0.20-0.60 were grown by metal organic chemical vapor deposition (MOCVD) on sapphire (0001) substrate using AlN buffer layer. High resolution X-ray diffraction (HRXRD) was performed for (0002), (0004), and (0006) reflections to investigate the threading dislocation density in variation with Al composition by X-ray analysis technique; Williamson-Hall (WH) plot. A symmetric high resolution 2θ-ω scans exhibit high crystal quality for all the AlGaN samples. A room temperature deep ultraviolet (DUV) photoluminescence (PL) spectroscopy (excitation at 248 nm) has also been employed to investigate the effect of various Al compositions on crystal structure of the thin film layers. It was observed that the band edge transition peak energy blueshifts from 3.87 eV for x = 0.23 to 4.55 eV for x = 0.47. In addition to the band edge transition, each spectrum also shows deep impurity transitions.

  1. Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si

    NASA Astrophysics Data System (ADS)

    Suda, Keita; Kuwata, Yuya; Watanabe, Masahiro

    2015-04-01

    The current-voltage (I-V) characteristics of single-barrier and double-barrier tunneling diode structures using CaF2/CdF2/Si ultrathin multilayered heterostructures grown on Si substrates have been theoretically analyzed and their material parameters, such as the conduction band discontinuity (ΔEC) at the heterointerface and effective mass (m*), have been evaluated by fitting simulation with the measured I-V characteristics. ΔEC between the ultrathin (1-3 nm) CaF2 and Si layers and m* for CaF2 were found to be 1.5-2.3 eV and 0.3-1.0m0, respectively. A clear thickness dependence of these parameters was observed, and the deviations of m* and ΔEC were approximately 30-50%, which probably originated from the thin layer thicknesses in atomic order. Using the estimated values derived from the single-barrier tunneling diodes, m* for CdF2 was also estimated to be 0.36m0 by fitting simulation of double-barrier diodes. These results will contribute to clarifying the design principle of tunneling devices with CaF2 and enhancing quantitative studies on electron transport in atomically thin multilayered heterostructures.

  2. Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates

    NASA Astrophysics Data System (ADS)

    Chen, Hui

    B12As2 possesses the extraordinary properties, such as wide bandgap of 3.47eV and unique 'self heal' ability from electron irradiation damage, which make it attractive for the applications in space electronics, high temperature semiconductors and in particular, beta cells, devices capable of producing electrical energy by coupling a radioactive beta emitter to a semiconductor junction. Due to the absence of native substrates, B12As2 has been grown on substrates with compatible structural parameters via chemical vapor deposition. To date, growth on Si with (100), (110) and (111) orientation and (0001) 6H-SiC has been attempted. However, structural variants, including rotational and translational variants, have been observed in the epilayers and are expected to have a detrimental effect on device performance which has severely hindered progress of this material to date. In addition, none of the earlier reports provide a detailed atomic level study of defect structures in the films and growth mechanisms remain obscure. The focus of this thesis is to study defect structures in B12As2 films grown on different SiC substrates using synchrotron x-ray topography, high resolution transmission microscopy as well as other characterization techniques. The goals of the studies are to understand the generations of the defects present in B12As 2 films and their growth mechanisms so as to develop strategies to reduce defect densities and obtain better film quality for future device fabrication. The following detailed studies have been carried out: (1) The microstructures in B12As2 epitaxial layers grown on on-axis c-plane (0001) 6H-SiC substrates were analyzed in detail. Synchrotron white beam X-ray topography (SWBXT) and scanning electron microscopy (SEM) revealed a mosaic structure consisting of a solid solution of twin and matrix epilayer domains. The epitaxial relationship was determined to be (0001)B12As2<112¯0> B12As2||(0001)6H-SiC<112¯0>6H-SiC. B 12As2 twinned domains were

  3. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

    NASA Astrophysics Data System (ADS)

    Durand, O.; Robert, C.; Nguyen Thanh, T.; Almosni, S.; Quinci, T.; Kuyyalil, J.; Cornet, C.; Létoublon, A.; Levallois, C.; Jancu, J.-M.; Even, J.; Pédesseau, L.; Perrin, M.; Bertru, N.; Sakri, A.; Boudet, N.; Ponchet, A.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Marie, X.; Balocchi, A.; Turban, P.; Tricot, S.; Modreanu, Mircea; Loualiche, S.; Le Corre, A.

    2013-01-01

    Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Γ valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reported.

  4. Study of Defect Structures in 6H-SiC a/ m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

    NASA Astrophysics Data System (ADS)

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2016-04-01

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/ m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed-epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g· b and g· b× l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed-homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Finally, the implication of these results for improving the LTC growth process is addressed.

  5. MnP films and MnP nanocrystals embedded in GaP epilayers grown on GaP(001): Magnetic properties and local bonding structure

    NASA Astrophysics Data System (ADS)

    de Andrés, A.; Espinosa, A.; Prieto, C.; García-Hernández, M.; Ramírez-Jiménez, R.; Lambert-Milot, S.; Masut, R. A.

    2011-06-01

    MnP nanostructures embedded in GaP epilayers, and MnP polycrystalline films, grown from the vapor phase on GaP(001) substrates using metalorganic precursors are compared with bulk MnP. We observe a large increase of the low transition temperature from the ferromagnetic to the antiferromagnetic screw phase, from TN = 47 K for bulk to 82 K for nanocrystals in MnP:GaP films, while the Curie temperature TC, close to room temperature, varies only slightly. A net magnetic moment is measured in the nanocrystals and films at 5 K, as well as large coercive fields, contrary to bulk MnP. X-ray absorption spectroscopy and diffraction show that epilayers and films contain MnP grains in the nanometric range with average Mn-P bond lengths very close to those of bulk MnP. The MnP film lattice parameters are almost identical to bulk values (within 0.5%) and the main crystallographic preferential orientations are those also present in the epilayers but with different relative populations. Overall the local structures of all MnP forms are very similar, except for indications of more disorder in the nanocrystals. Such combined changes of TN and TC are in apparent contradiction with the known response of bulk MnP to strains induced by hydrostatic, uniaxial or chemical pressure. We conclude that the differences in the low temperature magnetic behavior are most probably originated by local structural disorder at the surface of the nanostructures and by finite size effects.

  6. High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001)

    NASA Astrophysics Data System (ADS)

    Giannazzo, F.; Deretzis, I.; Nicotra, G.; Fisichella, G.; Ramasse, Q. M.; Spinella, C.; Roccaforte, F.; La Magna, A.

    2014-05-01

    In this paper, the structural and electronic properties of epitaxial graphene (EG) grown on 8°-off 4H-SiC (0001) by high temperature thermal processes have been extensively investigated by a combination of several high resolution characterization techniques. The increase in the number of graphene layers with the growth temperature (from 1600 to 1700 °C) was studied by microRaman spectroscopy and high resolution transmission electron microscopy (HRTEM) on cross-sectioned samples. The few layers of graphene reside on a stepped SiC surface with alternating (0001) terraces and (11-2n) facets. Peculiar corrugations (wrinkles) in the graphene membrane preferentially oriented perpendicularly to the substrate steps were also observed. Motivated by recent atomic resolution studies of the EG/SiC interface revealing a local delamination of the interfacial C buffer from the (11-2n) facets, we searched for a correlation of these interfacial structural properties with the macroscopic electronic transport in EG field effect transistors (FETs). In particular, electrical characterization of EG top gated FETs fabricated with the channel length parallel or perpendicular to the substrate steps revealed a peculiar anisotropy of the channel conductance with respect to the steps' orientation. This effect was explained in terms of a local enhancement of EG resistance on the (11-2n) facets with respect to the (0001) basal plane, which is consistent with a reduced doping due to the local buffer layer delamination from those facets. Furthermore, scanning probe microscopy-based local electron mean free path measurements on EG showed a ~3× enhancement of mean free path on the buffer-layer-free (11-2n) facets with respect to (0001) terraces, probably associated to a strong reduction of Coulomb scattering effects on graphene's electrons.

  7. Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Klangtakai, Pawinee; Sanorpim, Sakuntam; Wattanawareekul, Atiwat; Suwanyangyaun, Pattana; Srepusharawoot, Pornjuk; Onabe, Kentaro

    2015-05-01

    The effects of gamma-ray irradiation on the structural properties of GaAs1-xNx films (N concentration=1.9 and 5.1 at%) grown by metal organic vapor phase epitaxy on GaAs (001) substrates were investigated. The GaAs1-xNx films were irradiated by gamma rays with irradiation strength of 0-2.0 MGy. Scanning electron microscopy and atomic force microscopy results showed that a gamma ray with a strength of 0, 0.5, 1.0, 1.5, and 2.0 MGy formed holes with a density of 0.0, 8.8, 9.4, 11.5, and 11.9 μm-2, respectively, on the surface of a GaAs0.981N0.019 film with low N content. On the other hand, the irradiated high-N-content GaAs0.949N0.051 film exhibited a cross-hatch pattern, which was induced by partial strain relaxation at high N levels, with a line density of 0.0, 0.21, 0.37, 0.67, and 0.26 μm-1 corresponding to an irradiation strength of 0, 0.5, 1.0, 1.5, and 2.0 MGy, respectively. The high-resolution X-ray diffraction and Raman scattering results revealed an increase in N incorporation and strain relaxation after irradiation. In addition, the GaAs0.949N0.051 films exhibited phase separation, which took place via N out-diffusion across the interface when the irradiation strength exceeded 1.0 MGy. Based on these results, the main cause of structural change was determined to be the irradiation effects including displacement damage and gamma-ray heating.

  8. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH{sub 3} molecular beam epitaxy

    SciTech Connect

    Browne, David A.; Speck, James S.; Mazumder, Baishakhi; Wu, Yuh-Renn

    2015-05-14

    Unipolar-light emitting diode like structures were grown by NH{sub 3} molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In{sub 0.14}Ga{sub 0.86}N and In{sub 0.19}Ga{sub 0.81}N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  9. Synthesis, growth, structural, optical, luminescence, surface and HOMO LUMO analysis of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate organic single crystals grown by a slow evaporation technique

    NASA Astrophysics Data System (ADS)

    Karthigha, S.; Kalainathan, S.; Maheswara Rao, Kunda Uma; Hamada, Fumio; Yamada, Manabu; Kondo, Yoshihiko

    2016-02-01

    Single crystals of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate (4CLNS) were grown by a slow evaporation technique. The formation of molecule was confirmed from 1H NMR and FTIR analysis. The confirmation of crystal structure was done by single crystal XRD and atomic packing of grown crystal was identified. The grown single crystal crystallized in triclinic structure with centrosymmetric space group P-1. The crystalline nature of the synthesised material was recorded by powder XRD. The optical absorption properties of the grown crystals were analyzed by UV-vis spectral studies. The thermal behaviour of the title material has been studied by TG/DTA analysis which revealed the stability of the compound till its melting point 276.7 °C. The third order nonlinear optical property of 4CLNS was investigated in detail by Z scan technique and it confirms that the title crystal is suitable for photonic devices and NLO optical applications. Emissions at 519 nm in green region of the EM spectrum were found by photoluminescence studies. The charge transfer occurring within the molecule is explained by the calculated HOMO and LUMO energies.

  10. Molecule diagram from space-grown crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Researchers' at Hauptman-Woodward Medical Research Institute, in Buffalo, N.Y. have analyzed the molecular structures of insulin crystals grown during Space Shuttle experiments and are unlocking the mystery of how insulin works.

  11. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy.

    PubMed

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-29

    Catalystless growth of InxAl(1-x)N core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl(1-x)N nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl(1-x)N film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl(1-x)N is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl(1-x)N[0001]//Si[111] and InxAl(1-x)N[1120]//Si[110 by removing the native SiOx layer from the substrate. PMID:25944838

  12. Structural and optical properties of ZnMgO thin films grown by pulsed laser deposition using ZnO-MgO multiple targets

    NASA Astrophysics Data System (ADS)

    Maemoto, Toshihiko; Ichiba, Nobuyasu; Ishii, Hiroaki; Sasa, Shigehiko; Inoue, Masataka

    2007-04-01

    We report on structural and optical properties for Zn1-xMgxO (ZMO) thin films produced by pulsed laser ablation. ZMO thin films were grown on a-plane Al2O3 substrates at 400°C. In order to efficiently incorporate Mg into ZnO thin films, we used multiple ZnO-MgO ablation targets. Pulses from a Nd:YAG laser (4th harmonic generation: 266 nm) were directed on the ZnO-MgO ablation targets, which consisted of MgO single crystals mounted on ZnO ceramic targets. The ZMO films were characterized by x-ray diffraction, optical transmittance and cathodeluminescence (CL) measurements. Highly c-axis oriented ZMO(0002) reflections corresponding to the wurtzite-phase were observed. The c-axis lattice constants of the films were determined from the ZnMgO(0002) peak. The c-axis length of the ZMO films decreased linearly with Mg content. From the optical transmittance spectra of ZMO films, we observed a blue shift in the absorption edge with increasing Mg content. Band gap energies of ZMO thin films were determined from the optical transmittance and CL spectra. We found that the band gap energy changed from 3.27 eV to 3.95 eV. The Mg content of ZMO films increased monotonically with the number of laser pulses which struck the MgO target. These results show that laser ablation using multiple targets of ZnO and MgO is effective for band engineering of ZMO.

  13. Effect of substrate temperature on the optical, structural and morphological properties of In2Se3 thin films grown by a two-step process

    NASA Astrophysics Data System (ADS)

    Clavijo, J.; Romero, E.; Gordillo, G.

    2009-05-01

    Polycrystalline γ - In2Se3 thin films with adequate properties to use them as buffer layer in solar cells, were grown on corning glass substrates using a novel procedure which includes the formation of the α- In2Se3 phase in a first step followed by thermal annealing in Se ambient to activate the formation of the γ- In2Se3 phase. X-ray diffraction (XRD) measurements revealed that the substrate temperature strongly affects the phase in which the indium selenide films grow; at substrate temperatures of around 300°C the indium selenide grow in the α-In2Se3 phase, whereas the samples deposited at temperatures between 300 and 550°C grow with a mixture of the α-In2Se3 and γ-In2Se3 phases. The α-In2Se3 samples change into the γ-In2Se3 phase when subjected to heat treatment around 550°C in Se ambient. Spectrophotometric measurements also revealed that the phase in which the indium selenide films grow, significantly affects the optical gap Eg. Eg values of 1.47 eV and 2.11 eV were determined for the α-In2Se3 and γ-In2Se3 films respectively, indicating that this γ-In2Se3 compound has better properties to perform as buffer layer in thin film solar cells. The effect of substrate temperature on the structural, optical and morphological properties was investigated using XRD, spectral transmittance and atomic force microscope (AFM) measurements. Theoretical simulation of the XRD pattern carried out with the help of the PowderCell package, allowed us to identify the phases associated to the X-Ray reflections, with a good degree of confidence.

  14. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-01

    Catalystless growth of InxAl1-xN core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl1-xN nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl1-xN film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl1-xN is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl1-xN[0001]//Si[111] and InxAl1-xN[11\\bar{2}0]//Si[1\\bar{1}0] by removing the native SiOx layer from the substrate.

  15. Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-01

    Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  16. High optical and structural quality of GaN epilayers grown on (2{sup ¯}01) β-Ga{sub 2}O{sub 3}

    SciTech Connect

    Muhammed, M. M.; Roqan, I. S.; Peres, M.; Franco, N.; Lorenz, K.; Yamashita, Y.; Morishima, Y.; Sato, S.; Kuramata, A.

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼10{sup 8 }cm{sup −2}. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2{sup ¯}01) β-Ga{sub 2}O{sub 3} with in-plane epitaxial orientation relationships between the β-Ga{sub 2}O{sub 3} and the GaN thin film defined by (010) β-Ga{sub 2}O{sub 3} || (112{sup ¯}0) GaN and (2{sup ¯}01) β-Ga{sub 2}O{sub 3} || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high.

  17. Structural and optical properties of AgAlTe{sub 2} layers grown on sapphire substrates by closed space sublimation method

    SciTech Connect

    Uruno, A. Usui, A.; Kobayashi, M.

    2014-11-14

    AgAlTe{sub 2} layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe{sub 2} by X-ray diffraction. AgAlTe{sub 2} layers were grown to have a strong preference for the (112) orientation on both kinds of substrates. The variation in the orientation of grown layers was analyzed in detail using the X-ray diffraction pole figure measurement, which revealed that the AgAlTe{sub 2} had a preferential epitaxial relationship with the c-plane sapphire substrate. The atomic arrangement between the (112) AgAlTe{sub 2} layer and sapphire substrates was compared. It was considered that the high order of the lattice arrangement symmetry probably effectively accommodated the lattice mismatch. The optical properties of the grown layer were also evaluated by transmittance measurements. The bandgap energy was found to be around 2.3 eV, which was in agreement with the theoretical bandgap energy of AgAlTe{sub 2}.

  18. Structural Study of SiC Nanoparticles Grown by Inductively Coupled Plasma and Laser Pyrolysis for Nano-structured Ceramics Elaboration

    SciTech Connect

    Leconte, Yann; Portier, Xavier; Herlin-Boime, Nathalie; Reynaud, Cecile

    2008-07-01

    Refractory carbide nano-structured ceramics as SiC constitute interesting materials for high temperature applications and particularly for fourth generation nuclear plants. To elaborate such nano-materials, weighable amounts of SiC nano-powders have to be synthesized first with an accurate control of the grain size and stoichiometry. The inductively coupled plasma and the laser pyrolysis techniques, respectively developed at EMPA Thun and CEA Saclay, allow meeting these requirements. Both techniques are able to produce dozens of grams per hour of silicon carbide nano-powders. The particle size can be adjusted down to around 20 nm for the plasma synthesis and even down to 5-10 nm for the laser pyrolysis. The stoichiometry Si/C can be tuned by the addition of methane into the plasma and acetylene for the laser process. (authors)

  19. Ferroelectric properties and crystalline structures of BaMgF{sub 4} thin films grown on Pt(111)/SiO{sub 2}/Si(100)

    SciTech Connect

    Moriwaki, Masashi; Aizawa, Koji; Tokumitsu, Eisuke; Ishiwara, Hiroshi

    1997-07-01

    Crystalline quality and ferroelectric properties of (120)-oriented BaMgF{sub 4}(BMF) films grown on Pt(111)/SiO{sub 2}/Si(100) and n-Si(111) substrates have been investigated. The BaMgF{sub 4} films grown on Pt(111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF{sub 4}/Pt(111)/SiO{sub 2}/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.

  20. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  1. Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

    NASA Astrophysics Data System (ADS)

    Donmez, O.; Sarcan, F.; Lisesivdin, S. B.; Vaughan, M. P.; Erol, A.; Gunes, M.; Arikan, M. C.; Puustinen, J.; Guina, M.

    2014-12-01

    Temperature and nitrogen dependence of 2D carrier mobility in as-grown and annealed Ga1-xInxNyAs1-y/GaAs quantum well (QW) structures (x = 0.32 y = 0, 0.009, and 0.012) are investigated. An analytical model that accounts for the most prominent scattering mechanisms is used to explain the characteristic of temperature dependence of the carrier mobility. An expression for alloy scattering-limited mobility in N-related alloys is developed to explain the behavior of hole mobility for N-containing p-type samples. Analytical modeling of temperature dependence of the electron mobility indicates that N-related alloy scattering and interface roughness scattering are the dominant mechanism at the entire temperature range of interest. The temperature insensitivity of the electron mobility is explained in terms of the overriding effect of N-related alloy scattering and high 2D electron density. A deviation between theoretical and experimental electron mobility at low temperatures is observed not to have any dependency on N concentration. We, therefore, suggest that CNM interaction parameter of the band anti-crossing (BAC) model must be defined as temperature dependent in order to explain the observed low temperature characteristics of electron mobility. The hole mobility is mainly restricted by interface roughness and alloy scatterings at temperatures lower than 100 K, whilst high temperature hole mobility is drastically affected from optical phonon scattering. Moreover, the hole mobility at high temperatures exhibits an N-independent characteristic and hole density starts to increase at temperatures above 70 K, which is explained using the concept of parallel conduction. Extraction of the hole density in each transport channel (QW and barrier) by using a simple parallel conduction extraction method (SPCEM) shows that, in p-type samples, low temperature hole mobility takes place in quantum well, while as temperature increases barrier channel also contribute to the hole

  2. Uniaxial pressure effect on structural and magnetic phase transitions in NaFeAs and its comparison with as-grown and annealed BaFe2As2

    SciTech Connect

    Song, Yu; Carr, Scott Victor; Lu, Xingye; Zhang, Chenglin; Luttrell, N.F.; Zhao, Yang; Lynn, J. W.; Dai, Pengcheng; Sims, Zachary; Chi, Songxue

    2013-01-01

    We use neutron scattering to study the effect of uniaxial pressure on the tetragonal-toorthorhombic structural (Ts) and paramagnetic-to-antiferromagnetic (TN) phase transitions in NaFeAs and compare the outcome with similar measurements on as-grown and annealed BaFe2As2. In previous work on as-grown BaFe2As2, uniaxial pressure necessary to detwin the sample was found to induce a significant increase in zero pressure TN and Ts. However, we find that similar uniaxial pressure used to detwin NaFeAs and annealed BaFe2As2 has a very small effect on their TN and Ts. Since transport measurements on these samples still reveal resistivity anisotropy above TN and Ts, we conclude that such anisotropy cannot be due to uniaxial strain induced TN and Ts shifts, but must arise from intrinsic electronic anisotropy in these materials.

  3. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    SciTech Connect

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry; Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean; Bigenwald, Pierre

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  4. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry; Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; de Mierry, Philippe; Damilano, Benjamin; Massies, Jean; Bigenwald, Pierre

    2015-07-01

    We have grown (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al0.5Ga0.5N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  5. Structural and photoluminescence studies on europium-doped lithium tetraborate (Eu:Li2B4O7) single crystal grown by microtube Czochralski (μT-Cz) technique

    NASA Astrophysics Data System (ADS)

    A, Kumaresh; R, Arun Kumar; N, Ravikumar; U, Madhusoodanan; B, S. Panigrahi; K, Marimuthu; M, Anuradha

    2016-05-01

    Rare earth europium (Eu3+)-doped lithium tetraborate (Eu:Li2B4O7) crystal is grown from its stoichiometric melt by microtube Czochralski pulling technique (μT-Cz) for the first time. The grown crystals are subjected to powder x-ray diffraction (PXRD) analysis which reveals the tetragonal crystal structure of the crystals. UV–vis–NIR spectral analysis is carried out to study the optical characteristics of the grown crystals. The crystal is transparent in the entire visible region, and the lower cutoff is observed to be at 304 nm. The existence of BO3 and BO4 bonding structure and the molecular associations are analyzed by Fourier transform infrared (FTIR) spectroscopy. The results of excitation and emission-photoluminescence spectra of europium ion incorporated in lithium tetraborate (LTB) single crystal reveal that the observations of peaks at 258, 297, and 318 nm in the excitation spectra and peaks at 579, 591, 597, 613, and 651 nm are observed in the emission spectra. The chromaticity coordinates are calculated from the emission spectra, and the emission intensity of the grown crystal is characterized through a CIE 1931 (Commission International d’Eclairage) color chromaticity diagram. Project supported by the Department of Science and Technology–Science and Engineering Research Board (Grant No. SR/S2/LOP-0012/2011), the Government of India for Awarding Major Research Project, the University Grants Commission–Department of Atomic Research–Consortium for Scientific Research (Grant No. CSR–KN/CSR–63/2014–2015/503), and the Kalpakkam and Indore, India.

  6. Structural properties of CdTe-ZnTe strained-layer superlattice grown on GaAs by hot-wall epitaxy

    NASA Astrophysics Data System (ADS)

    Sugiyama, I.; Hobbs, A.; Ueda, O.; Shinohara, K.; Takigawa, H.

    1991-06-01

    CdTe-ZnTe strained-layer superlattices (SLSs) were grown on GaAs by hot-wall epitaxy. The individual layer thickness of the SLS is well controlled and the thickness fluctuation is less than ±1 monolayer. High-resolution transmission electron microscopy images show coherent SLS growth. We found that two-thirds of the threading dislocations can be reduced by inserting the SLS in CdTe/GaAs.

  7. Growth mechanism and structure characterizations of GaSb islands grown on Si (1 0 0) substrates by LP-MOCVD

    NASA Astrophysics Data System (ADS)

    Lv, You; Liu, Ren-Jun; Wang, Lian-Kai; Li, Guo-Xing; Zhang, Yuan-Tao; Dong, Xin; Zhang, Bao-Lin

    2015-07-01

    In this paper, the growth mechanism and the morphologies of GaSb islands grown on Si (1 0 0) by low-pressure metal-organic chemical vapor deposition have been studied. It was observed the GaSb growth mode transited from SK to VW mode with time, while the islands migrated in VW mode on the surface. As growth time prolonging, the islands were coarsening consistent with the considerations of Ostwald ripening substituting for migration. And it was the similar coalescence process in the various interruption time. The formation of giant islands reduced the surface energy with the island-induced strain fields which drive the islands distribution evenly.

  8. Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

    SciTech Connect

    Klad'ko, V. P.; Chornen'kii, S. V.; Naumov, A. V. Komarov, A. V.; Tacano, M.; Sveshnikov, Yu. N.; Vitusevich, S. A.; Belyaev, A. E.

    2006-09-15

    Overall characterization of the GaN and AlGaN/GaN epitaxial layers by X-ray diffractometry and optical spectral analysis is carried out. The layers are grown by metalloorganic gas-phase epitaxy on (0001)-oriented single crystal sapphire wafers. The components of strains and the density of dislocations are determined. The effects of strains and dislocations on the photoluminescence intensity and spectra are studied. The results allow better understanding of the nature and mechanisms of the formation of defects in the epitaxial AlGaN/GaN heterostructures.

  9. Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

    SciTech Connect

    Nesting, D.C.; Kouvetakis, J.; Hearne, S.; Chason, E.; Tsong, I.S.

    1999-05-01

    The morphology and biaxial stress of amorphous boron films grown on silicon at 630 {degree}C have been determined {ital in situ} and in real time using energy dispersive x-ray reflectivity and multiple-beam optical stress sensor techniques. The capability to determine the morphology and stress of light-element thin films {ital in situ} and in real time provides a unique opportunity to optimize the parameters of thin film deposition under chemical vapor deposition conditions. {copyright} {ital 1999 American Vacuum Society.}

  10. Structural and electrical characterization of NbO2 vertical devices grown on TiN coated SiO2/Si substrate

    NASA Astrophysics Data System (ADS)

    Joshi, Toyanath; Borisov, Pavel; Lederman, David

    Due to its relatively high MIT temperature (1081 K) and current-controlled negative differential resistance, NbO2 is a robust candidate for memory devices and electrical switching applications. In this work, we present in-depth analysis of NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition (PLD). Two of the films grown in 1 mTorr and 10 mTorr O2/Ar (~7% O2) mixed growth pressures were studied. The formation of NbO2 phase was confirmed by Grazing Incidence X-ray Diffractometry (GIXRD), X-ray Photoelectron Spectroscopy (XPS) and current vs. voltage measurements. A probe station tip (tip size ~2 μm) or conductive AFM tip was used as a top and TiN bottom layer was used as a bottom contact. Device conductivity showed film thickness and contact size dependence. Current pulse measurements, performed in response to applied triangular voltage pulses, showed a non-linear threshold switching behavior for voltage pulse durations of ~100 ns and above. Self-sustained current oscillations were analyzed in terms of defect density presented in the film. Supported by FAME (sponsored by MARCO and DARPA, Contract 2013-MA-2382), WV Higher Education Policy Commission Grant (HEPC.dsr.12.29), and WVU SRF. We also thank S. Kramer from Micron for providing the TiN-coated Si substrates.

  11. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    PubMed

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere. PMID:25852391

  12. Photochemical Properties, Composition, and Structure in Molecular Beam Epitaxy Grown Fe “Doped” and (Fe,N) Codoped Rutile TiO2(110)

    SciTech Connect

    Mangham, Andrew N.; Govind, Niranjan; Bowden, Mark E.; Shutthanandan, V.; Joly, Alan G.; Henderson, Michael A.; Chambers, Scott A.

    2011-08-11

    We have investigated the surface photochemical properties of Fe "doped" and (Fe,N) co-doped homoepitaxial rutile TiO2 (110) films grown by plasma assisted molecular beam epitaxy. Fe does not incorporate as an electronic dopant in the rutile lattice, but rather segregates to the film surface. However, co-deposition of Fe with N enhances the solubility of Fe, and DFT calculations suggest that co-dopant complex formation is the driving force behind the enhanced solubility. The co-doped films, in which a few atomic percent of Ti (O) are replaced with Fe (N), exhibit significant disorder compared to undoped films grown under the same conditions, presumably due to dopant-induced strain. Co-doping redshifts the rutile bandgap into the visible. However, the film surfaces are photochemically inert with respect to hole-mediated decomposition of adsorbed trimethyl acetate. The absence of photochemical activity may result from dopant-induced trap and/or recombination sites within the film. This study indicates that enhanced visible light absorptivity in TiO2 does not necessarily result in visible light initiated surface photochemistry.

  13. Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb).

    PubMed

    Hansen, Per-Anders; Fjellvåg, Helmer; Finstad, Terje; Nilsen, Ola

    2013-08-14

    Ln2O3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd)3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone as precursors. The temperature range for depositions was 200-400 °C. Growth rates were measured by spectroscopic ellipsometry and a region with a constant growth rate (ALD window) was found for Ln = Ho and Tm. All the compounds are grown as amorphous films at low temperatures, whereas crystalline films (cubic C-Ln2O3) are obtained above a certain temperature ranging from 300 to 250 °C for Nd2O3 to Yb2O3, respectively. AFM studies show that the films were smooth (rms < 1 nm) except for depositions at the highest temperatures. The refractive index was measured by spectroscopic ellipsometry and was found to depend on the deposition temperature. Optical absorption measurements show that the absorption from the f-f transitions depends strongly on the crystallinity of the material. The clear correlation between the degree of crystallinity, optical absorptions and refractive indices is discussed. PMID:23774891

  14. Defects in the crystal structure of Cd{sub x}Hg{sub 1-x}Te layers grown on the Si (310) substrates

    SciTech Connect

    Yakushev, M. V. Gutakovsky, A. K.; Sabinina, I. V.; Sidorov, Yu. G.

    2011-07-15

    Microstructure of the CdTe (310) and CdHgTe (310) layers grown by molecular-beam epitaxy on Si substrates has been studied by the methods of transmission electron microscopy and selective etching. It is established that formation of antiphase domains in the CdHgTe/CdTe/ZnTe/Si(310) is determined by the conditions of formation of the ZnTe/Si interface. Monodomain layers can be obtained by providing conditions that enhance zinc adsorption. An increase in the growth temperature and in the pressure of Te{sub 2} vapors gives rise to antiphase domains and induces an increase in their density to the extent of the growth of poly-crystals. It is found that stacking faults exist in a CdHgTe/Si(310) heterostructure; these defects are anisotropically distributed in the bulk of grown layers. The stacking faults are predominantly located in one (111) plane, which intersects the (310) surface at an angle of 68 Degree-Sign . The stacking faults originate at the ZnTe/Si(310) interface. The causes of origination of stacking faults and of their anisotropic distribution are discussed.

  15. Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

    SciTech Connect

    Scarpellini, D.; Paoloni, S.; Medaglia, P.G.; Pizzoferrato, R.; Orsini, A.; Falconi, C.

    2015-05-15

    Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

  16. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    NASA Astrophysics Data System (ADS)

    Ayari, Taha; Sundaram, Suresh; Li, Xin; El Gmili, Youssef; Voss, Paul L.; Salvestrini, Jean Paul; Ougazzaden, Abdallah

    2016-04-01

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  17. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  18. Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

    SciTech Connect

    Coulon, P. M.; Mexis, M.; Teisseire, M.; Vennéguès, P.; Leroux, M.; Zuniga-Perez, J.; Jublot, M.

    2014-04-21

    Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

  19. The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy

    SciTech Connect

    Hawkridge, Michael E; Liliental-Weber, Zuzanna; Kim, Hee Jin; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun; Dupuis, Russell

    2008-10-13

    Al(x)Ga(1-x)N layers of varying composition (0.5grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metalorganic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x(Al)<0.75), a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.

  20. 1. 5-. mu. m GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures

    SciTech Connect

    Tsang, W.T.; Bowers, J.E.; Burkhardt, E.G.; Ditzenberger, J.A.; Wilt, D.P.; Dutta, N.K.; Napholtz, S.G.; Shen, T.M.; Twu, Y.; Logan, R.A.; and others

    1988-02-15

    GaInAsP/InP double heterostructures grown by chemical-beam epitaxy have been used in conjunction with liquid-phase-epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5 ..mu..m. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to approx.10 mW/facet. The 3-dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, <-150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.

  1. Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

    SciTech Connect

    Shen, X. Q. Takahashi, T.; Ide, T.; Shimizu, M.

    2015-09-28

    We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the different growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.

  2. Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shen, X. Q.; Takahashi, T.; Ide, T.; Shimizu, M.

    2015-09-01

    We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the different growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.

  3. Structure and properties of Bi(Zn0.5Ti0.5)O3- Pb(Zr(1-x)Ti(x))O3 ferroelectric single crystals grown by a top-seeded solution growth technique.

    PubMed

    Wang, Bixia; Wu, Xiaoqing; Ren, Wei; Ye, Zuo-Guang

    2015-06-01

    Bi(Zn0.5Ti0.5)O3 (BZT)-modified Pb(Zr(1-x)Ti(x))O3 (PZT) single crystals have been grown using a top-seeded solution growth technique and characterized by various methods. The crystal structure is found to be rhombohedral by means of X-ray powder diffraction. The composition and homogeneity of the as-grown single crystals are studied by laser ablation inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The domain structure of a (001)(cub) platelet is investigated by polarized light microscopy (PLM), which confirms the rhombohedral symmetry. The paraelectric-to-ferroelectric phase transition temperature T(C) is found to be 313°C with the absence of rhombohedral-tetragonal phase transition. The ferroelectric properties of the ternary crystals are enhanced by the BZT substitution with a remanent polarization of 28 μC/cm(2) and a coercive field E(C) of 22.1 kV/cm. PMID:26067036

  4. Structural, thermal, laser damage, photoconductivity, NLO and mechanical properties of modified vertical Bridgman method grown AgGa0.5In0.5Se2 single crystal

    NASA Astrophysics Data System (ADS)

    Vijayakumar, P.; Ramasamy, P.

    2016-08-01

    AgGa0.5In0.5Se2 single crystal was grown using modified vertical Bridgman method. The structural perfection of the AgGa0.5In0.5Se2 single crystal has been analyzed by high-resolution X-ray diffraction rocking curve measurements. The structural and compositional uniformities of AgGa0.5In0.5Se2 were studied using Raman scattering spectroscopy at room temperature. The FWHM of the Γ1 (W1) and Γ5L (Γ15) measured at different regions of the crystal confirms that the composition throughout its length is fairly uniform. Thermal properties of the as-grown crystal, including specific heat, thermal diffusivity and thermal conductivity have been investigated. The multiple shot surface laser damage threshold value was measured using Nd:YAG laser. Photoconductivity measurements with different temperatures have confirmed the positive photoconducting behavior. Second harmonic generation (SHG) on powder samples has been measured using the Kurtz and Perry technique and the results display that AgGa0.5In0.5Se2 is a phase-matchable NLO material. The hardness behavior has been measured using Vickers micro hardness measurement and the indentation size effect has been observed. The classical Meyer's law, propositional resistance model and modified propositional resistance model have been used to analyse the micro hardness behavior.

  5. Inorganic nanostructures grown on graphene layers

    NASA Astrophysics Data System (ADS)

    Park, Won Il; Lee, Chul-Ho; Lee, Jung Min; Kim, Nam-Jung; Yi, Gyu-Chul

    2011-09-01

    This article presents a review of current research activities on the hybrid heterostructures of inorganic nanostructures grown directly on graphene layers, which can be categorized primarily as zero-dimensional nanoparticles; one-dimensional nanorods, nanowires, and nanotubes; and two-dimensional nanowalls. For the hybrid structures, the nanostructures exhibit excellent material characteristics including high carrier mobility and radiative recombination rate as well as long-term stability while graphene films show good optical transparency, mechanical flexibility, and electrical conductivity. Accordingly, the versatile and fascinating properties of the nanostructures grown on graphene layers make it possible to fabricate high-performance optoelectronic and electronic devices even in transferable, flexible, or stretchable forms. Here, we review preparation methods and possible device applications of the hybrid structures consisting of various types of inorganic nanostructures grown on graphene layers.

  6. Graphic Grown Up

    ERIC Educational Resources Information Center

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  7. Structure and Three-Dimensional Crystal Packing Preferences for mer-Tris (8-quinolinolato) Indium (III) Vapor-Phase-Grown Crystals

    SciTech Connect

    Sapochak, Linda S.; Ranasinghe, Asanga; Kohlmann, Holger; Ferris, Kim F.; Burrows, Paul E.

    2004-02-10

    Evaluation of indium(III) tris(8-quinolinolato) (Inq3) chelate crystals grown slowly from the vapor phase under vacuum ({approx}10-6 Torr) was compared to the aluminum analogue, Alq3. In both cases, a previously unidentified close - interaction is identified, which likely impacts charge conduction. In the case of Inq3, we observe a mixture of both meridianal (mer) and facial (fac) crystals. The larger pseudohexagon mer-Inq3 crystals were analyzed by single-crystal X-ray diffraction and showed average In-N and In-O bond lengths significantly longer (0.22 and 0.26 ?, respectively) than Alq3 and bond angles about the In3+ ion more distorted from an ideal octahedral geometry. The crystalline packing of mer-Inq3 is found to closely resemble the -Alq3 phase, where both metal chelates are characterized by pairing of symmetry-related mer-optical isomers in three-dimensional - stacking interactions ({approx}3.5 ? or less). The smaller needlelike crystals were determined to be pure fac-Inq3 by powder X-ray diffraction studies. An equivalent is not observed when Alq3 is processed in an identical manner.

  8. Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Vennegues, P.; Korytov, M.; Deparis, C.; Zuniga-Perez, J.; Morhain, C.; Chauveau, J. M.

    2008-04-15

    The interfacial relationship and the microstructure of nonpolar (11-20) ZnO films epitaxially grown on (1-102) R-plane sapphire by molecular beam epitaxy are investigated by transmission electron microscopy. The already-reported epitaxial relationships [1-100]{sub ZnO} parallel [11-20]{sub sapphire} and <0001>{sub ZnO} parallel [-1101]{sub sapphire} are confirmed, and we have determined the orientation of the Zn-O (cation-anion) bond along [0001]{sub ZnO} in the films as being uniquely defined with respect to a reference surface Al-O bond on the sapphire substrate. The microstructure of the films is dominated by the presence of I{sub 1} basal stacking faults [density=(1-2)x10{sup 5} cm{sup -1}] and related partial dislocations [density=(4-7)x10{sup 10} cm{sup -2}]. It is shown that I{sub 1} basal stacking faults correspond to dissociated perfect dislocations, either c or a+c type.

  9. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism

    NASA Astrophysics Data System (ADS)

    Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.

    2016-04-01

    We demonstrate the fabrication and electrical characterization of Ω -gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor-liquid-solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at VDS = -0.5 V and VGS = -3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane's Band-to-Band Tunneling model.

  10. AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties

    NASA Astrophysics Data System (ADS)

    Merschjann, C.; Mews, M.; Mete, T.; Karkatzinou, A.; Rusu, M.; Korzun, B. V.; Schorr, S.; Schubert-Bischoff, P.; Seeger, S.; Schedel-Niedrig, Th; Lux-Steiner, M.-Ch

    2012-05-01

    Thin films of chalcopyrite AgGaSe2 have been successfully grown on glass and glass/molybdenum substrates using the technique of chemical close-spaced vapor transport. The high crystallinity of the samples is confirmed by grazing-incidence x-ray diffraction, scanning and transmission electron microscopy, and optical transmission/reflection spectroscopy. Here, two of the three expected direct optical bandgaps are found at 1.77(2) and 1.88(6) eV at 300 K. The lowest bandgap energy at 4 K is estimated to be 1.82(3) eV. Photoluminescence spectroscopy has further revealed the nature of the point defects within the AgGaSe2, showing evidence for the existence of very shallow acceptor levels of 5(1) and 10(1) meV, and thus suggesting the AgGaSe2 phase itself to exhibit a p-type conductivity. At the same time, electrical characterization by Hall, Seebeck and four-point-probe measurements indicate properties of a compensated semiconductor. The electrical properties of the investigated thin films are mainly influenced by the presence of Ag2Se and Ga2O3 nanometer-scaled surface layers, as well as by Ag2Se inclusions in the bulk and Ag clusters at the layers’ rear side.

  11. AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties.

    PubMed

    Merschjann, C; Mews, M; Mete, T; Karkatzinou, A; Rusu, M; Korzun, B V; Schorr, S; Schubert-Bischoff, P; Seeger, S; Schedel-Niedrig, Th; Lux-Steiner, M-Ch

    2012-05-01

    Thin films of chalcopyrite AgGaSe(2) have been successfully grown on glass and glass/molybdenum substrates using the technique of chemical close-spaced vapor transport. The high crystallinity of the samples is confirmed by grazing-incidence x-ray diffraction, scanning and transmission electron microscopy, and optical transmission/reflection spectroscopy. Here, two of the three expected direct optical bandgaps are found at 1.77(2) and 1.88(6) eV at 300 K. The lowest bandgap energy at 4 K is estimated to be 1.82(3) eV. Photoluminescence spectroscopy has further revealed the nature of the point defects within the AgGaSe(2), showing evidence for the existence of very shallow acceptor levels of 5(1) and 10(1) meV, and thus suggesting the AgGaSe(2) phase itself to exhibit a p-type conductivity. At the same time, electrical characterization by Hall, Seebeck and four-point-probe measurements indicate properties of a compensated semiconductor. The electrical properties of the investigated thin films are mainly influenced by the presence of Ag(2)Se and Ga(2)O(3) nanometer-scaled surface layers, as well as by Ag(2)Se inclusions in the bulk and Ag clusters at the layers' rear side. PMID:22469870

  12. Structural and waveguiding characteristics of Er3+:Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Hlásek, T.; Rubešová, K.; Jakeš, V.; Nekvindová, P.; Kučera, M.; Daniš, S.; Veis, M.; Havránek, V.

    2015-11-01

    Erbium (Er3+) doped ytterbium garnet (Er:Yb3Al5-yGayO12; y = 0, 0.55 and 1.1) single crystalline thick films have been grown by the low-temperature liquid phase epitaxy method (LPE). The composition of the films was determined using the high resolution XRD, the particle-induced X-ray emission spectroscopy (PIXE) and the particle-induced gamma-ray emission spectroscopy (PIGE). The lattice mismatch between films and substrates was investigated by the high-resolution X-ray diffraction. The surface analysis was carried out by the atomic force microscopy (AFM). Pure infrared emission of Er3+ ions was observed in all films containing gallium. The characteristics such as refractive index, thickness and light propagation were studied by the m-line spectroscopy (MLS) using several wavelengths (633, 964, 1311 and 1552 nm). All samples, where y = 1.1, were multimode waveguides. For these reasons, the Er:Yb3Al3.9Ga1.1O12 seems to be a promising material for light amplifiers in the IR region.

  13. Molecule diagram from earth-grown crystals

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Like many chemicals in the body, the three-dimensional structure of insulin is extremely complex. When grown on the ground, insulin crystals do not grow as large or as ordered as researchers desire--obscuring the blueprint of the insulin molecules.

  14. Self-assembled tin-doped ZnO nanowire and nanoplate structures grown by thermal treatment of ZnS powder

    NASA Astrophysics Data System (ADS)

    Ortega, Y.; Fernández, P.; Piqueras, J.

    2009-05-01

    Sintering of a ZnS-SnO 2 mixture under argon flow leads to the growth of columnar nanoplate arrays as well as arrays of nanowires, nanorods and nanoplates with six-fold symmetry. The six-fold nanoplate structures correspond to a more advanced stage of growth than the nanowire structures. Cathodoluminescence (CL) in the scanning electron microscope (SEM) shows that the structures contain Sn, but the amount of this element is normally under the detection limit of X-ray energy-dispersive spectroscopy (EDS). The formation of branches in the hierarchical structures depends on the presence of Sn and on defects in the mixture powder.

  15. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

    NASA Astrophysics Data System (ADS)

    Li, X.; Le Gac, G.; Bouchoule, S.; El Gmili, Y.; Patriarche, G.; Sundaram, S.; Disseix, P.; Réveret, F.; Leymarie, J.; Streque, J.; Genty, F.; Salvestrini, J.-P.; Dupuis, R. D.; Li, X.-H.; Voss, P. L.; Ougazzaden, A.

    2015-12-01

    10-period Al0.57Ga0.43N/Al0.38Ga0.62N multi-quantum wells (MQWs) were grown on a relaxed Al0.58Ga0.42N buffer on AlN templates on sapphire. The threading dislocations and V-pits were characterized and their origin is discussed. The influence of V-pits on the structural quality of the MQWs and on optical emission at 280 nm was analyzed. It was observed that near-surface V-pits were always associated with grain boundaries consisting of edge threading dislocations originating from the AlN/Al2O3 interface. Although the high density of V-pits disrupted MQWs growth, it did not affect the internal quantum efficiency which was measured to be ~1% at room temperature even when V-pit density was increased from 7×107 cm-2 to 2×109 cm-2. The results help to understand the origin, propagation and influences of the typical defects in AlGaN MQWs grown on AlN/Al2O3 templates which may lead to further improvement of the performance of DUV devices.

  16. Ion implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

  17. The single crystal X-ray structure of β-hematin DMSO solvate grown in the presence of chloroquine, a β-hematin growth-rate inhibitor

    PubMed Central

    Gildenhuys, Johandie; le Roex, Tanya; Egan, Timothy J.; de Villiers, Katherine A.

    2012-01-01

    Single crystals of solvated β-hematin were grown from a DMSO solution containing the antimalarial drug chloroquine, a known inhibitor of β-hematin formation. In addition, a kinetics study employing biomimetic lipid-water emulsion conditions was undertaken to further investigate the effect of chloroquine and quinidine on the formation of β-hematin. Scanning electron microscopy shows that the external morphology of the β-hematin DMSO solvate crystals is almost indistinguishable from that of malaria pigment (hemozoin) and single crystal X-ray diffraction confirms the presence of μ-propionato coordination dimers of iron(III) protoporphyrin IX. The free propionic acid functional groups of adjacent dimers hydrogen bond to included DMSO molecules, rather than forming carboxylic acid dimers. The observed exponential kinetics were modeled using the Avrami equation, with an Avrami constant equal to 1. The decreased rate of β-hematin formation observed at low concentrations of both drugs could be accounted for by assuming a mechanism of drug adsorption to sites on the fastest growing face of β-hematin. This behavior was modeled using the Langmuir isotherm. Higher concentrations of drug resulted in decreased final yields of β-hematin, and an irreversible drug-induced precipitation of iron(III) protoporphyrin IX was postulated to account for this. The model permits determination of the equilibrium adsorption constant (Kads). The values for chloroquine (log Kads = 5.55 ± 0.03) and quinidine (log Kads = 4.92 ± 0.01) suggest that the approach may be useful as a relative probe of the mechanism of action of novel antimalarial compounds. PMID:23253048

  18. Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

    SciTech Connect

    Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May

    2014-09-08

    We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.

  19. Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

    SciTech Connect

    Izhnin, I. I. Izhnin, A. I.; Fitsych, E. I.; Smirnova, N. A.; Denisov, I. A.; Pociask, M.; Mynbaev, K. D.

    2011-09-15

    Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ({approx}10{sup 17} cm{sup -3}) created in the films. These defects decompose in {approx}10{sup 3} min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to {approx}10{sup 14} cm{sup -3}) for the films under study.

  20. High spectral response and photoluminescence of Al/sub x/Ga/sub 1-x/As solar cell structures grown by metalorganic chemical vapor deposition (0. 28< or =x< or =0. 53)

    SciTech Connect

    Ludowise, M.J.; Dietze, W.T.

    1984-06-15

    Internal quantum efficiency (spectral response) data are presented for metalorganic chemical vapor deposition-grown Al/sub x/Ga/sub 1-x/As (0.28< or =x< or =0.53) solar cell structures. Quantum efficiencies as high as 90% are obtained for x = 0.28, falling to approx.45% for x = 0.53. Electron diffusion lengths are derived from these data by fitting to theoretical predictions. Photoluminescence data on the samples are also presented showing strong intensity (comparable to GaAs) for 0.28< or =x< or =0.35. Degradation in performance above x = 0.38 is attributed to increased deep level densities and direct-indirect band-edge crossover effects.

  1. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  2. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  3. Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

    NASA Astrophysics Data System (ADS)

    Nakasu, Taizo; Kizu, Takeru; Yamashita, Sotaro; Aiba, Takayuki; Hattori, Shota; Sun, Wei-Che; Taguri, Kosuke; Kazami, Fukino; Hashimoto, Yuki; Ozaki, Shun; Kobayashi, Masakazu; Asahi, Toshiaki

    2016-04-01

    ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-smooth step-terrace structure was used to improve the crystallinity and morphology of the produced ZnTe film. The growth mode of the ZnTe thin film on a sapphire substrate with an atomically-smooth step-terrace structure was found to shift to a two-dimensional growth mode, and a ZnTe thin film possessing a flat surface was obtained. The crystallographic properties of the ZnTe film suggested that the resulting layer consisted of a single (111)-oriented domain. The photoluminescence property was also improved, and the interface lattice alignment between the ZnTe and sapphire was also affected by the atomically-smooth step-terrace structure.

  4. Effect of gas residence time on near-edge X-ray absorption fine structures of hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jia, Lingyun; Sugiura, Hirotsugu; Kondo, Hiroki; Takeda, Keigo; Ishikawa, Kenji; Oda, Osamu; Sekine, Makoto; Hiramatsu, Mineo; Hori, Masaru

    2016-04-01

    In hydrogenated amorphous carbon films, deposited using a radical-injection plasma-enhanced chemical vapor deposition system, the chemical bonding structure was analyzed by near-edge X-ray absorption fine-structure spectroscopy. With a change in the residence times of source gases in a reactor, whereby total gas flow rates of H2/CH4 increased from 50 to 400 sccm, sp2-C fractions showed the minimum value at 150 sccm, while H concentration negligibly changed according to the results of secondary ion mass spectroscopy. On the other hand, widths of σ* C-C peaks increased with decreasing gas residence time, which indicates an increase in the fluctuation of bonding structures.

  5. Strain-Dependence of the Structure and Ferroic Properties of Epitaxial NiTiO 3 Thin Films Grown on Different Substrates

    DOE PAGESBeta

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Kovarik, Libor; Hu, Dehong; Chambers, Scott A.

    2015-01-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO 3 (M = Fe, Mn, and Ni). We set out to stabilize this metastable perovskite structure by growing NiTiO 3 epitaxially on different substrates and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO 3 films were deposited on Al 2 O 3 , Fe 2 O 3 , and LiNbO 3 substrates by pulsed laser deposition and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from X-raymore » diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain and highlight our ability to control the ferroic properties in NiTiO 3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO 3 is polarization induced. From the substrates studied here, the perovskite substrate LiNbO 3 proved to be the most promising one for strong multiferroism.« less

  6. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial NiTiO3 Thin Films Grown On Different Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Kovarik, Libor; Hu, Dehong; Chambers, Scott A.

    2015-08-14

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on different substrates, and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO3 films were deposited on Al2O3, Fe2O3, and LiNbO3 substrates by pulsed laser deposition, and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO3 is polarization-induced. From the substrates studied here, the perovskite substrate LiNbO3 proved to be the most promising one for strong multiferroism.

  7. Structural and optical properties of ZnO nanostructures grown by aerosol spray pyrolysis: Candidates for room temperature methane and hydrogen gas sensing

    NASA Astrophysics Data System (ADS)

    Motaung, D. E.; Mhlongo, G. H.; Kortidis, I.; Nkosi, S. S.; Malgas, G. F.; Mwakikunga, B. W.; Ray, S. Sinha; Kiriakidis, G.

    2013-08-01

    We report on the synthesis of ZnO films by aerosol spray pyrolysis method at different deposition times. The surface morphology, crystal structure and the cross-sectional analysis of the prepared ZnO films were characterized by X-ray diffraction (XRD), focused ion beam scanning electron microscopy (FIB-SEM), atomic force microscopy (AFM) and high resolution transmission electron microscopy (HR-TEM). XRD analysis revealed that the ZnO films are polycrystalline in nature. Structural analysis exploiting cross-sectional TEM profile showed that the films composed of nano-particles and columnar structures growing perpendicular to the substrate. AFM revealed that the columnar structures have a higher surface roughness as compared to the nanoparticles. The effect of ZnO crystallite size and crystallinity on the gas sensing performance of hydrogen and methane gases was also evaluated. Sensing film based on ZnO nanoparticles has numerous advantages in terms of its reliability and high sensitivity. These sensing materials revealed an improved response to methane and hydrogen gases at room temperature due to their high surface area, indicating their possible application as a gas sensor.

  8. Strain-dependence Of The Structure And Ferroic Properties Of Epitaxial Ni-1 (-) Ti-x(1) (-) O-y(3) Thin Films Grown On Sapphire Substrates

    SciTech Connect

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Stephens, Sean A.; Manandhar, Sandeep; Shutthanandan, V.; Colby, Robert J.; Hu, Dehong; Shelton, William A.; Chambers, Scott A.

    2015-03-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3 (M = Fe, Mn, Ni) [Fennie, Phys. Rev. Lett. 100, 167203 (2008)]. We set out to stabilize this metastable perovskite structure by growing NiTiO3 epitaxially on sapphire Al2O3 (001) substrate, and to control the polar and magnetic properties via strain. Epitaxial Ni1-xTi1-yO3 films of different Ni/Ti ratios and thicknesses were deposited on Al2O3 substrates by pulsed laser deposition at different temperatures, and characterized using several techniques. The effect of film thickness, deposition temperature, and film stoichiometry on lattice strain, film structure, and physical properties was investigated. Our structural data from x-ray diffraction, electron microscopy, and x-ray absorption spectroscopy shows that substrate-induced strain has a marked effect on the structure and crystalline quality of the films. Physical property measurements reveal a dependence of the Néel transition and lattice polarization on strain, and highlight our ability to control the ferroic properties in NiTiO3 thin films by film stoichiometry and thickness.

  9. Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-02-01

    Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal-insulator-semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor.

  10. Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.

    2016-06-01

    Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the admittance of MIS structures based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy are studied. A technique is proposed for the determining the concentration of dopant based on the measurement of the admittance of MIS structures in the frequency range of 50 kHz - 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer have a high- frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. The distribution profile of dopant in the nearsurface layer of the semiconductor is calculated. It is shown that in p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has the lowest value near the interface with the insulator.

  11. Electron beam induced coloration and luminescence in layered structure of WO{sub 3} thin films grown by pulsed dc magnetron sputtering

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-06-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO{sub 3} film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device.

  12. Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy

    SciTech Connect

    Andreev, B. A.; Sobolev, N. A. Denisov, D. V.; Shek, E. I.

    2013-10-15

    The photoluminescence spectra of light-emitting structures based on silicon doped with erbium during the course of molecular-beam epitaxy at a temperature of 500 Degree-Sign C are studied at 4.2 K on being annealed at 800-900 Degree-Sign C. Three sets of lines belonging to the emitting centers of erbium in silicon with a low oxygen-impurity concentration are revealed.

  13. Different continuous cropping spans significantly affect microbial community membership and structure in a vanilla-grown soil as revealed by deep pyrosequencing.

    PubMed

    Xiong, Wu; Zhao, Qingyun; Zhao, Jun; Xun, Weibing; Li, Rong; Zhang, Ruifu; Wu, Huasong; Shen, Qirong

    2015-07-01

    In the present study, soil bacterial and fungal communities across vanilla continuous cropping time-series fields were assessed through deep pyrosequencing of 16S ribosomal RNA (rRNA) genes and internal transcribed spacer (ITS) regions. The results demonstrated that the long-term monoculture of vanilla significantly altered soil microbial communities. Soil fungal diversity index increased with consecutive cropping years, whereas soil bacterial diversity was relatively stable. Bray-Curtis dissimilarity cluster and UniFrac-weighted principal coordinate analysis (PCoA) revealed that monoculture time was the major determinant for fungal community structure, but not for bacterial community structure. The relative abundances (RAs) of the Firmicutes, Actinobacteria, Bacteroidetes, and Basidiomycota phyla were depleted along the years of vanilla monoculture. Pearson correlations at the phyla level demonstrated that Actinobacteria, Armatimonadetes, Bacteroidetes, Verrucomicrobia, and Firmicutes had significant negative correlations with vanilla disease index (DI), while no significant correlation for fungal phyla was observed. In addition, the amount of the pathogen Fusarium oxysporum accumulated with increasing years and was significantly positively correlated with vanilla DI. By contrast, the abundance of beneficial bacteria, including Bradyrhizobium and Bacillus, significantly decreased over time. In sum, soil weakness and vanilla stem wilt disease after long-term continuous cropping can be attributed to the alteration of the soil microbial community membership and structure, i.e., the reduction of the beneficial microbes and the accumulation of the fungal pathogen. PMID:25391237

  14. Process modeling and analysis of structure and stoichiometry of magnesium oxide nano thin films grown by molecular beam epitaxy on 6 hydrogen-silicon carbide substrates

    NASA Astrophysics Data System (ADS)

    Uddin, Ghulam Moeen

    In recent years there has been an increasing interest in effective integration of nano scale functional oxides with semiconductors for third and fourth generation nano devices including high-K dielectrics based electronic devices and paradigm-shifting spintronics-based circuits. In this research we investigate the growth of MgO nano thin films on 6H-SiC substrate in a molecular beam epitaxy process. Here MgO serves as a template layer to minimize the mismatch with both substrate and a functional oxide films such as BTO and BaM. In this research we constructed neural network based process models using historical experimental data. Based on these process models we performed structural and stoichiometric analyses through both design of experiments and Monte Carlo simulation. We found that the percentage starting oxygen on the substrate is the most critical variable that promotes the undesired bonding states, i.e., Mg-OH and excessive strain in film crystalline structure. In addition the impact of percentage of starting oxygen on structure and stoichiometry is affected by the film thickness. The interaction between substrate temperature and oxygen on the starting substrate surface is the critical pair that affects the dynamics of Mg-OH bonding state. This study helped us analyze the process behavior and gain process knowledge to conduct systematic experimentation. After conducting the systematic experiments we quantitatively studied the causal relationship the undesired bonding states and the percentage starting oxygen at 3 levels of film thickness. Moreover, the cleaning of silicon carbide (6H-SiC) substrate surface is an essential and important step to grow MgO films with minimum undesired bonding states. We investigated high temperature hydrogen etching process to clean the substrate surface. In this research we studied the impact of cleaning time and cleaning temperature by analyzing the reflection high energy electron diffraction (RHEED) structural performance

  15. Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition

    PubMed Central

    2014-01-01

    The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN. PMID:25489282

  16. Electronic structure analysis and properties of Sr{sub 2}CeO{sub 4} grown by sol–gel method

    SciTech Connect

    Talik, E.; Lipińska, L.; Skrzypek, D.; Skuta, A.; Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa ; Zajdel, P.; Guzik, A.; Duda, H.

    2012-11-15

    Highlights: ► Sr{sub 2}CeO{sub 4} nanopowders were obtained by sol–gel method. ► SEM/EDX imaging and chemical analysis have been done. ► XPS electronic structure was examined and discussed. ► The terminal and equatorial Ce-O bonds contributions were determined in O2p states. ► The energy gap was estimated by valence band and electrical measurements. -- Abstract: Sr{sub 2}CeO{sub 4} is a very promising material due to its various industrial applications, e.g. for the construction of field emission displays and light emitting diodes. In this work, the phosphor was synthesized by the sol–gel method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electron paramagnetic resonance (EPR) and X-ray photoelectron spectroscopy (XPS) methods. They proved to be very good structural properties of the material and identified negligible impurities from the technological process. The decomposition of the surface of the nanocrystals was found but this did not decrease the spectral features of the compound. The analysis of the XPS O2p lines revealed contributions of two kinds of bonds: terminal and equatorial ones, in the ratio of 2/4. They are separated by 1.2 eV what is in agreement with the observed absorption spectra. A presence of the decomposed layers may produce asymmetric widening of the emission spectra towards a lower energy.

  17. Study of surface cross-hatch and misfit dislocation structure in In(0.15)Ga(0.85)As/GaAs grown by chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    Beanland, R.; Aindow, M.; Joyce, T. B.; Kidd, P.; Lourenco, M.; Goodhew, P. J.

    1995-04-01

    It is well known that a cross-hatch develops on the surface of low-misfit strained semiconductor layers which undergo relaxation by the introduction of arrays of a/2(101) misfit dislocations in the interface between the strained layer and substrate. Here we present a study of the detailed structure of these surface striations and their development with thickness in a series of In(x)Ga(1-x)As single layers on (001)GaAs, where x is close to 0.15. Using atomic force microscopy, it is found that the striations are in fact almost triangular ridges with rounded tops separated by V-shaped grooves. They are not slip traces. These ridges are found to be asymmetric in distribution, with those parallel to (1(bar)10) far higher than those parallel to (110). The spacing and height of the ridges increases with layer thickness. The structure also becomes more disordered in the case of thicker layers, with ridges running for shorter lengths and having more complex profiles. Using transmission electron microscopy, it is possible to link the ridges to dislocations lying above, and parallel to, the interface which result from repeated operation of multiplication sources.

  18. Terpenoid Composition and Base Sequences of Ligularia virgaurea (Asteraceae) Grown in the Hengduan Mountain Area in China and a Comment on Drawing Structures.

    PubMed

    Tori, Motoo

    2016-01-01

    A chemical analysis of 30 samples of Ligularia virgaurea (Asteraceae) collected in Sichuan province and its adjacent territories in China was reviewed. These samples afforded 146 compounds, 73 of which were novel, and the chemical constituents were classified into 8 categories: (1) simple eremophilanes (without ring C) and eudesmanes including nor-derivatives, (2) furanoeremophilanes and lactones with a 1(10)-saturated bond, (3) furanoeremophilanes and lactones with a 1(10)-unsaturated bond, 1,10-epoxide, or 10-ol, (4) furanoeremophilanes and lactones with 1(10)-en-2-one, 1(10)-en-2-ol, or 1-en-3-one, (5) furanoeremophilanes and lactones with 1(10)-en-9-one, 1(10)-en-9-ol, or 1,10-epoxy-9-one, (6) cacalol and their derivatives, (7) bakkanes and their derivatives, and (8) others, as shown in Tables 1-7. In these studies, five chemotypes were identified in addition to three clades from the DNA sequences of L. virgaurea. The structural determination of some compounds was also discussed and a comment on how to express the real structure was proposed, particularly for spiro compounds. PMID:26936046

  19. Structural and dynamical magnetic response of co-sputtered Co2FeAl heusler alloy thin films grown at different substrate temperatures

    NASA Astrophysics Data System (ADS)

    Yadav, Anjali; Chaudhary, Sujeet

    2014-04-01

    The interdependence between the dynamical magnetic response and the microstructural properties such as crystallinity, lateral crystallite size, structural ordering of the co-sputtered polycrystalline Co2FeAl thin films on Si (100) are studied by varying the growth temperature from room temperature (RT) to 600 °C. Frequency (7-11 GHz) dependent in-plane ferromagnetic resonance (FMR) studies were carried out by using co-planar waveguide to estimate Gilbert damping constant (α) and effective saturation magnetization (4πMeff). The improvement in crystallinity, larger crystallite and particle sizes of the films are critical in obtaining films with lower α and higher 4πMeff. Increase in the lattice constant with substrate temperature indicates the improvement in the structural ordering at higher temperatures. Minimum value of α is found to be 0.005 ± 0.0003 for the film deposited at 500 °C, which is comparable to the values reported for epitaxial Co2FeAl films. The value of 4πMeff is found to increase from 1.32 to 1.51 T with the increase in deposition temperature from RT to 500 °C. The study also shows that the root mean square (rms) roughness linearly affects the FMR in-homogenous line broadening and the anisotropy field.

  20. Hierarchical core/shell structure of MnO2@polyaniline composites grown on carbon fiber paper for application in pseudocapacitors.

    PubMed

    Yang, MinHo; Hong, Seok Bok; Choi, Bong Gill

    2015-11-28

    Hierarchical core/shell structured arrays of MnO2@polyaniline (PANI) nanosheets are successfully deposited on the surface of carbon fiber paper (CFP) by a two-step method of a redox reaction-assisted deposition of MnO2 and post electrodeposition of PANI. The CFP is used as a three-dimensional (3D) current collector to ensure 3D transport of ions and electrons with a large surface area. In addition, the electrodeposition technique enables conformal and thin coating of a layer of PANI across the entire MnO2 nanosheet. The MnO2@PANI on the CFP shows a unique architecture for efficient ion diffusion pathways in hierarchical porous structures and rapid electron transfer through PANI coated layers. The MnO2@PANI/CFP can be applied as a binder- and carbon-free electrode for supercapacitors. Evaluation of the electrochemical performance revealed that the as-prepared electrodes have a high value of specific capacitance (437 F g(-1) at 1 A g(-1)), high rate capability (62.4% retention at 15 A g(-1)), and good cycle life (∼100% at sequential current densities of 1 and 5 A g(-1) over 3000 cycles). PMID:26486195

  1. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) < 0.4) and Ga-rich (x(Ga) > 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 < x(Ga) < 0.6) are mainly due to compositional inhomogeneities. Most remarkably, the catalyst-free InGaAs NWs exhibit a characteristic transition in crystal structure from wurtzite to zincblende (ZB) dominated phase near x(Ga) ˜ 0.4 that is further reflected in a cross-over from blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  2. Structural and dielectric properties of Ba0.7Sr0.3TiO3 thin films grown by PLD

    NASA Astrophysics Data System (ADS)

    James, K. K.; Satish, B.; Jayaraj, M. K.

    2014-01-01

    Ferroelectric thin films of Ba0.7Sr0.3TiO3 (BST) were deposited on Si/SiO2/TiO2/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10-4 mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of -4 to +4V. The leakage current density was nearly 9×10-13 Acm-2.

  3. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    SciTech Connect

    James, K. K.; Satish, B.; Jayaraj, M. K.

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

  4. Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2 grown by MIST EPITAXY®

    NASA Astrophysics Data System (ADS)

    Oda, Masaya; Tokuda, Rie; Kambara, Hitoshi; Tanikawa, Tomochika; Sasaki, Takahiro; Hitora, Toshimi

    2016-02-01

    Thin-film corundum-structured gallium oxide (α-Ga2O3) Schottky barrier diodes (SBDs) were fabricated by growing α-Ga2O3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY® technique, followed by lifting off the α-Ga2O3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 mΩ·cm2 and 531 V (SBD1) or 0.4 mΩ·cm2 and 855 V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with α-Ga2O3.

  5. Detailed structural analysis of epitaxial MBE-grown Fe/Cr superlattices by x-ray diffraction and transmission-electron spectroscopy

    SciTech Connect

    Gomez, M.E.; Santamaria, J.; Kim, S.; Schuller, Ivan K.; Krishnan, Kannan M.

    2005-03-15

    We have performed a detailed quantitative structural analysis of epitaxial [Fe(3 nm)/Cr(1.2 nm)]{sub 20} superlattices by low- and high-angle x-ray diffraction, and energy-filtered transmission electron microscopy on cross-section samples. The interface roughness was changed systematically by varying the substrate temperature (150-250 deg. C) maintaining all other growth parameters fixed. Direct imaging of the interfaces allows examining the roughness of the individual interfaces and its evolution with thickness. A statistical analysis of the local interface width for the individual layers supplies the roughness static and dynamic exponents. High-temperature samples (250 deg. C) show roughness decreasing with thickness as a result of surface-diffusion-dominated growth. Low-temperature samples (150 deg. C) show anomalous non-self-affine roughness characterized by a time-dependent local interface width.

  6. Structural, optical, and electrical properties of Cu2O nanocubes grown on indium-tin-oxide-coated glass substrates by using seed-layer-free electrochemical deposition method

    NASA Astrophysics Data System (ADS)

    No, Young Soo; Oh, Do Hyon; Kim, Su Yeon; Yoo, Keon-Ho; Kim, Tae Whan

    2012-07-01

    Electrochemical deposition was employed to fabricate Cu2O nanocubes on indium-tin-oxide (ITO)-coated glass substrates at 75 °C without using any template, catalyst, or seed layer. Scanning electron microscopy images showed that the Cu2O nanocubes with a nanoscale size were uniformly formed on ITO-coated glass substrates. X-ray patterns of the Cu2O nanocubes exhibited the dominant peaks corresponding to the Cu2O cubic structures. The current-voltage curves of an Au/n-type Al-doped ZnO/p-type Cu2O nanocube/ITO device clearly showed current rectifying behavior with a turn-on voltage of 3.6 V.

  7. Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO(100)

    SciTech Connect

    Shan, Rong; Ouardi, Siham; Fecher, Gerhard H.; ViolBarbosa, Carlos E.; Felser, Claudia; Gao, Li; Kellock, Andrew; Roche, Kevin P.; Samant, Mahesh G.; Parkin, Stuart S. P.; Ikenaga, Eiji

    2013-04-29

    Thin films of the proposed topological insulator LuPdBi-a Heusler compound with the C1{sub b} structure-were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi{sub 2} and Lu targets. Epitaxial growth of LuPdBi films was confirmed by X-ray diffraction and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, even though the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the LuPdBi films, observed by hard X-ray photoelectron spectroscopy, correspond very well with the ab initio-calculated density of states.

  8. Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC

    NASA Astrophysics Data System (ADS)

    Xin, Bin; Jia, Ren-Xu; Hu, Ji-Chao; Zhang, Yu-Ming

    2016-08-01

    We investigate a unique super-V-shaped structure (SVSS) on the C-face of 3C/4H-SiC heteroepitaxial films. Atomic force microscopy (AFM) and optical images reveal that two low protruding straight lines of an SVSS join at a common higher protruding point. Transmission electron microscopy images determine that the protruding point is induced by polycrystalline nucleation, and straight lines are found to be 3C crystals without any specific defects. High-resolution AFM reveals that the directions of the SVSSs are strongly related to step-flow. It is believed that the straight lines are caused by redundant adatoms gathering and crystallizing when they meet and deviate around the protruding point defect on their original migration path. The effects of step-flow and anti-step-flow in the formation of SVSSs are discussed.

  9. Study of LiTa0 3 crystals grown with a modulated structure I. Second harmonic generation in LiTa0 3 crystals with periodic laminar ferroelectric domains

    NASA Astrophysics Data System (ADS)

    Wenshan, Wang; Qun, Zou; Zhaohua, Geng; Duan, Feng

    1986-12-01

    A radio-frequency heated Czochralski technique was first used to obtain LiTa0 3 crystals with a modulated structure (periodic laminar ferroelectric domains). The alternation of ferroelectric domains whose half-period almost corresponds to the coherence length has been observed in doped LiTa0 3 crystals. The technological parameters of LiTaO 3 crystals grown with a modulated structure by the RF-CZ technique have been studied in detail. Quasi-phase-matching for the nonlinear coefficient d33 has been realized using a 1.06 μ m Nd : YAG laser in LiTa0 3 crystals. The optical damage threshold of LiTa0 3 crystals by laser irradiation was measured using a focused pulse Nd :YAG laser, giving an emission at 1.06 μ m of 10 ns duration. When the estimated peak intensity was 15 GW/cm 2·s, no surface and volume damage were found on the LiTaO 3 crystals.

  10. Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

    PubMed Central

    2014-01-01

    We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices. PACS 81.07.Gf; 81.15.Hi; 78.55.Cr PMID:25489280

  11. Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

    NASA Astrophysics Data System (ADS)

    Le Boulbar, E. D.; Gîrgel, I.; Lewins, C. J.; Edwards, P. R.; Martin, R. W.; Šatka, A.; Allsopp, D. W. E.; Shields, P. A.

    2013-09-01

    The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and without the introduction of a hydrogen silsesquioxane passivation layer at the bottom of the etched nanorod arrays. This layer successfully prevented c-plane growth between the nanorods, resulting in vertical nanorod sidewalls (˜89.8°) and a more regular height distribution than re-growth on unpassivated nanorods. The height variation on passivated nanorods is solely determined by the uniformity of nanorod diameter, which degrades with increased growth duration. Facet-dependent indium incorporation of GaN/InGaN/GaN core-shell layers regrown onto the etched nanorods is observed by high-resolution cathodoluminescence imaging. Sharp features corresponding to diffracted wave-guide modes in angle-resolved photoluminescence measurements are evidence of the uniformity of the full core-shell structure grown on ordered etched nanorods.

  12. Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} single crystals grown by the Czochralski method

    SciTech Connect

    GLowacki, MichaL; Runka, Tomasz; Drozdowski, MirosLaw; Domukhovski, Viktor; Berkowski, Marek

    2012-02-15

    The (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300-875 K temperature range. Absorption and emission spectra of Sm{sup 3+} ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu{sup 3+} content in (Lu{sub x}Gd{sub 0.995-x}Sm{sub 0.005}){sub 2}SiO{sub 5} solid solution crystals induces the phase transition from C2/c (Lu{sub 2}SiO{sub 5}) to P2{sub 1}/c (Gd{sub 2}SiO{sub 5}) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15grown by Czochralski method and characterized by various techniques. Crystal structure changes from C2/c to P2{sub 1}/c for composition with 0.15structure causes changes in emission spectra. Highlights: Black-Right-Pointing-Pointer The (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5} crystals are an alternative to LSO and GSO hosts for applications. Black-Right-Pointing-Pointer The break of the P2{sub 1}/c to C2/c structure in (Lu{sub x}Gd{sub 1-x}){sub 2}SiO{sub 5}:Sm occurs for 0.15

  13. A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

    SciTech Connect

    Mukherjee, Nillohit; Sinha, Arijit; Khan, Gobinda Gopal; Chandra, Debraj; Bhaumik, Asim; Mondal, Anup

    2011-01-15

    We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH{sub 3}COO){sub 2}, SC(NH{sub 2}){sub 2} and N(CH{sub 2}CH{sub 2}OH){sub 3} [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.

  14. Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

    PubMed Central

    2014-01-01

    In x Al1-x N films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of In x Al1-x N films. Surface morphologies and microstructure of the In x Al1-x N films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that In x Al1-x N films were preferentially oriented in the c-axis direction. Besides, the growth rates of In x Al1-x N films were measured at around 0.6 μm/h in average. Reflection spectrum shows that the optical absorption of the In x Al1-x N films redshifts with an increase in the In composition. PMID:24855462

  15. Clonal structure and flowering traits of a bamboo [Phyllostachys pubescens (Mazel) Ohwi] stand grown from a simultaneous flowering as revealed by AFLP analysis.

    PubMed

    Isagi, Y; Shimada, K; Kushima, H; Tanaka, N; Nagao, A; Ishikawa, T; OnoDera, H; Watanabe, S

    2004-07-01

    Abstract Although many bamboo species are characterized by simultaneous flowering at long intervals of up to 120 years, few studies have revealed the length of the flowering interval for very-long-lived bamboo species by observing the whole life cycle of a single clone. The flowering interval of Phyllostachys pubescens had been determined to be 67 years by means of observation through the entire life cycle from 1912 to 1979. We observed and analysed the clonal structure and flowering traits of a P. pubescens community which had regenerated from seed in 1930 and began to flower in 1997. Although this interval was again 67 years, flowering and nonflowering culms were mixed, and the flowering event lasted three years in the community. AFLP analysis of DNA samples showed distinct genets that originated from the previous flowering event and that each genet had its own flowering time. This is the first report to show that (i) different genets are mixed in a community of a large bamboo species with a leptomorphic rhizome system, and (ii) a community that originated from a single flowering event can have a range of flowering years. PMID:15189222

  16. Effects of total CH 4/Ar gas pressure on the structures and field electron emission properties of carbon nanomaterials grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Qi, J. L.; Wang, X.; Zheng, W. T.; Tian, H. W.; Liu, C.; Lu, Y. L.; Peng, Y. S.; Cheng, G.

    2009-12-01

    The effects of total CH 4/Ar gas pressure on the growth of carbon nanomaterials on Si (1 0 0) substrate covered with CoO nanoparticles, using plasma-enhanced chemical vapor deposition (PECVD), were investigated. The structures of obtained products were correlated with the total gas pressure and changed from pure carbon nanotubes (CNTs) through hybrid CNTs/graphene sheets (GSs), to pure GSs as the total gas pressure changed from 20 to 4 Torr. The total gas pressure influenced the density of hydrogen radicals and Ar ions in chamber, which in turn determined the degree of how CoO nanoparticles were deoxidized and ion bombardment energy that governed the final carbon nanomaterials. Moreover, the obtained hybrid CNTs/GSs exhibited a lower turn-on field (1.4 V/μm) emission, compared to either 2.7 V/μm for pure CNTs or 2.2 V/μm for pure GSs, at current density of 10 μA/cm 2.

  17. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films. PMID:25423483

  18. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    SciTech Connect

    Johansson, Leif I. Xia, Chao; Virojanadara, Chariya

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  19. Effects of Elevated Atmospheric CO2 on Microbial Community Structure at the Plant-Soil Interface of Young Beech Trees (Fagus sylvatica L.) Grown at Two Sites with Contrasting Climatic Conditions.

    PubMed

    Gschwendtner, Silvia; Leberecht, Martin; Engel, Marion; Kublik, Susanne; Dannenmann, Michael; Polle, Andrea; Schloter, Michael

    2015-05-01

    Soil microbial community responses to elevated atmospheric CO2 concentrations (eCO2) occur mainly indirectly via CO2-induced plant growth stimulation leading to quantitative as well as qualitative changes in rhizodeposition and plant litter. In order to gain insight into short-term, site-specific effects of eCO2 on the microbial community structure at the plant-soil interface, young beech trees (Fagus sylvatica L.) from two opposing mountainous slopes with contrasting climatic conditions were incubated under ambient (360 ppm) CO2 concentrations in a greenhouse. One week before harvest, half of the trees were incubated for 2 days under eCO2 (1,100 ppm) conditions. Shifts in the microbial community structure in the adhering soil as well as in the root rhizosphere complex (RRC) were investigated via TRFLP and 454 pyrosequencing based on 16S ribosomal RNA (rRNA) genes. Multivariate analysis of the community profiles showed clear changes of microbial community structure between plants grown under ambient and elevated CO2 mainly in RRC. Both TRFLP and 454 pyrosequencing showed a significant decrease in the microbial diversity and evenness as a response of CO2 enrichment. While Alphaproteobacteria dominated by Rhizobiales decreased at eCO2, Betaproteobacteria, mainly Burkholderiales, remained unaffected. In contrast, Gammaproteobacteria and Deltaproteobacteria, predominated by Pseudomonadales and Myxococcales, respectively, increased at eCO2. Members of the order Actinomycetales increased, whereas within the phylum Acidobacteria subgroup Gp1 decreased, and the subgroups Gp4 and Gp6 increased under atmospheric CO2 enrichment. Moreover, Planctomycetes and Firmicutes, mainly members of Bacilli, increased under eCO2. Overall, the effect intensity of eCO2 on soil microbial communities was dependent on the distance to the roots. This effect was consistent for all trees under investigation; a site-specific effect of eCO2 in response to the origin of the trees was not observed

  20. Magnetic anisotropy and order structure of L10-FePt(001) single-crystal films grown epitaxially on (001) planes of MgO, SrTiO3, and MgAl2O4 substrates

    NASA Astrophysics Data System (ADS)

    Hotta, A.; Ono, T.; Hatayama, M.; Tsumura, K.; Kikuchi, N.; Okamoto, S.; Kitakami, O.; Shimatsu, T.

    2014-05-01

    L10-FePt(001) single-crystal films were grown epitaxially on SrTiO3(001), MgAl2O4(001), and MgO(001) substrates. Their uniaxial magnetic anisotropy Ku and the order structure were examined for the film thickness t range of 2-14 nm. All series of films show large Ku of 4 × 107 erg/cm3 in the thickness range higher than 10 nm, with order parameter S of 0.8 and saturation magnetization Ms of 1120 emu/cm3. Ku decreased gradually as t decreased. The Ku reduction was considerable when t decreased from 4 nm to 2 nm. No marked difference in the thickness dependence of Ku was found in any series of films, although the lattice mismatch between FePt and the substrates was markedly different. Ku reduction showed good agreement with the reduction of S for the films on MgAl2O4 and MgO. The Ku ˜ S2 plot showed an almost linear relation, which is in good agreement with theoretical predictions. Transmission electron microscopy images for a FePt film on MgO substrate revealed that the lattice mismatch between FePt(001) and MgO(001) was relaxed in the initial 1 or 2 layers of FePt(001) lattices, which is likely to be true also for two other series of films.

  1. Electronic structure of Co-induced magic clusters grown on Si(111)-(7×7) : Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

    NASA Astrophysics Data System (ADS)

    Zilani, M. A. K.; Xu, H.; Liu, T.; Sun, Y. Y.; Feng, Y. P.; Wang, X.-S.; Wee, A. T. S.

    2006-05-01

    The electronic structure of cobalt-induced magic clusters grown on Si(111)-(7×7) is investigated by scanning tunneling microscopy, scanning tunneling spectroscopy, and real-space multiple-scattering calculations. Topographical images of a half unit cell of Si(111)-(7×7) with the cluster acquired at low bias voltages of ±0.4V show greatly reduced cluster heights; however, the heights of the corner adatoms are unchanged, indicative of the highly localized nature of the charge distribution. Spectroscopic studies of the clusters indicate a band gap of ˜0.8eV , suggesting localized nonmetallic behavior. The opening of such a band gap is suggested to be a stabilizing factor for the observed magic clusters. A 65-atom Co-Si cluster is constructed to calculate the momentum- and element-projected density of states. The calculated result identifies that the intense state below the Fermi level at -1.75V in the experimental spectroscopic curve is primarily due to localized 3d orbitals of Co atoms in the magic clusters.

  2. Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

    NASA Astrophysics Data System (ADS)

    Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2016-03-01

    The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

  3. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  4. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich InxAl1-xN thin films grown by plasma-assisted dual source reactive evaporation

    NASA Astrophysics Data System (ADS)

    Alizadeh, M.; Ganesh, V.; Goh, B. T.; Dee, C. F.; Mohmad, A. R.; Rahman, S. A.

    2016-08-01

    In-rich InxAl1-xN thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV-vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the InxAl1-xN films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the InxAl1-xN films showed that by increasing the N2 flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich InxAl1-xN films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90-1.17 eV which is desirable for the application of full spectra solar cells.

  5. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ghazai, Alaa Jabbar; Hassan, Haslan Abu; Hassan, Zanuri Bint

    2016-07-01

    The objective of the current study is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via molecular beam epitaxy (MBE) on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications. Due to mismatch problems between the epilayer and substrates, the AlN buffer layer was inserted at low temperature to reduce the lattice mismatch to approximately 4% for the samples, to produce high-quality epitaxy films. Defect-free films with high structural, optical and electrical qualities were obtained. Their small full width at half maximum, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any separation phases or cracks were characterized using X-ray diffraction analysis. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using photoluminescence and UV-VIS spectroscopy; however, a red shift was observed in the PL peak of the near band edge of 3.158 eV of the sample on Si substrate compared with 3.37 eV for the sample on sapphire substrate which is attributed to the compressive strain and occurrence of the quantum confined Stark effect.

  6. Intracellular inclusions of a n-alkane-grown Arthrobacter

    SciTech Connect

    Griffin, W.M.; Traxler, R.W.

    1983-01-01

    The ultrastructural changes associated with the growth of a marine Arthrobacter sp. on n-hexadecane were demonstrated by transmission electron microscopy. Multiple electron translucent areas (ETI), similar to inclusions described by other investigators, were found in hydrocarbon-grown cells but not in peptone-grown cells. Stereological planimetry demonstrated that the ETI occupy as much as 40% of the hydrocarbon-grown cell's volume. Electron dense structures (EDI) were observed in hexadecane and in peptone-grown cells. Gas chromatographic analysis indicated traces of n-hexadecane associated with the hydrocarbon-grown cells: however, the hydrocarbon levels were not high enough to suggest the presence of hydrocarbon inclusions in the cells. Solvent partition studies with disrupted UC-n-hexadecane-grown cells suggested that the intracellular radioactivity was associated with polar compounds. Acrylate-inhibited, hydrocarbon-grown Arthrobacter sp. did not form ETI, suggesting that the formation of ETI involves the participation of Coenzyme A. Thin-layer and gas chromatography indicated that the major intracellular components were glycerides, with one or more R groups composed of palmitic acid and free palmitic acid. 27 references, 5 figures, 2 tables.

  7. Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    SciTech Connect

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-07

    Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  8. Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4.

    PubMed

    Kouta, H; Kuwano, Y

    1999-02-20

    When a visible laser beam passes through beta-BaB(2)O(4) (BBO), scattered light can be observed along the beam within the crystal. Scattering centers caused by structural defects in Czochralski-grown BBO can be reduced by 95% by annealing at 920 degrees C. In the flux-grown BBO, centers actually increase by the same annealing because the process causes microcracks and/or secondary inclusions. It is shown that annealed Czochralski-grown BBO is superior to flux-grown BBO (annealed or as-grown) in terms of optical loss. PMID:18305712

  9. Protein Crystals Grown in Space

    NASA Technical Reports Server (NTRS)

    2000-01-01

    A collage of protein and virus crystals, many of which were grown on the U.S. Space Shuttle or Russian Space Station, Mir. The crystals include the proteins canavalin; mouse monoclonal antibody; a sweet protein, thaumatin; and a fungal protease. Viruses are represented here by crystals of turnip yellow mosaic virus and satellite tobacco mosaic virus. The crystals are photographed under polarized light (thus causing the colors) and range in size from a few hundred microns in edge length up to more than a millimeter. All the crystals are grown from aqueous solutions and are useful for X-ray diffraction analysis. Credit: Dr. Alex McPherson, University of California, Irvine.

  10. Structure and superconductivity of (Li1-x Fe x )OHFeSe single crystals grown using A x Fe2-y Se2 (A  =  K, Rb, and Cs) as precursors

    NASA Astrophysics Data System (ADS)

    Yu, G.; Zhang, G. Y.; Ryu, G. H.; Lin, C. T.

    2016-01-01

    We present results on the hydrothermal growth of (\\text{L}{{\\text{i}}1-x}\\text{F}{{\\text{e}}x} )OHFeSe single crystals using floating-zone-grown {{A}x}\\text{F}{{\\text{e}}2-y}\\text{S}{{\\text{e}}2} (A  =  K, Rb, and Cs) as precursors. The growth proceeds by the hydrothermal ion exchange of Li/Fe-O-H for K, Rb, and Cs, resulting in a stacking layer of (\\text{L}{{\\text{i}}1-x}\\text{F}{{\\text{e}}x} )OH sandwiched between the FeSe layers. Optimal growth parameters are achieved using high quality A 0.80Fe1.81Se2 single crystals added to the mixtures of LiOH, H2O, Fe and C(NH2)2Se in an autoclave and subsequently heated to 120 °C for 2 d, to obtain highest quality single crystals. The obtained crystals have lateral dimensions up to centimeters, with the final size related to that of the precursor crystal used. All (\\text{L}{{\\text{i}}1-x}\\text{F}{{\\text{e}}x} )OHFeSe single crystals show a superconducting transition temperature T c  >  42 K, regardless of the phase of the precursor such as superconducting K0.80Fe1.81Se2 (T c  =  29.31 K) or non-superconducting Rb0.80Fe1.81Se2 or poor-superconducting Cs0.80Fe1.81Se2 (T c  =  28.67 K). The T c and transition width ΔT vary in the obtained single crystals, due to the inhomogeneity of the ionic exchange. X-ray diffraction analysis demonstrates that the 245 insulating phase is absent in the ion-exchanged single crystals, while it is observed in the {{A}x}\\text{F}{{\\text{e}}2-y}\\text{S}{{\\text{e}}2} precursors. Comparative studies of the structure, magnetization, and superconductivity on the parent A 0.80Fe1.81Se2 and the ion-exchanged (\\text{L}{{\\text{i}}1-x}\\text{F}{{\\text{e}}x} )OHFeSe crystals are discussed. A phase diagram including antiferromagnetic spin density wave and superconducting phases is also proposed.

  11. Structure and superconductivity of (Li1-x Fe x )OHFeSe single crystals grown using A x Fe2-y Se2 (A  =  K, Rb, and Cs) as precursors.

    PubMed

    Yu, G; Zhang, G Y; Ryu, G H; Lin, C T

    2016-01-13

    We present results on the hydrothermal growth of ([Formula: see text])OHFeSe single crystals using floating-zone-grown [Formula: see text] (A  =  K, Rb, and Cs) as precursors. The growth proceeds by the hydrothermal ion exchange of Li/Fe-O-H for K, Rb, and Cs, resulting in a stacking layer of ([Formula: see text])OH sandwiched between the FeSe layers. Optimal growth parameters are achieved using high quality A 0.80Fe1.81Se2 single crystals added to the mixtures of LiOH, H2O, Fe and C(NH2)2Se in an autoclave and subsequently heated to 120 °C for 2 d, to obtain highest quality single crystals. The obtained crystals have lateral dimensions up to centimeters, with the final size related to that of the precursor crystal used. All ([Formula: see text])OHFeSe single crystals show a superconducting transition temperature T c  >  42 K, regardless of the phase of the precursor such as superconducting K0.80Fe1.81Se2 (T c  =  29.31 K) or non-superconducting Rb0.80Fe1.81Se2 or poor-superconducting Cs0.80Fe1.81Se2 (T c  =  28.67 K). The T c and transition width ΔT vary in the obtained single crystals, due to the inhomogeneity of the ionic exchange. X-ray diffraction analysis demonstrates that the 245 insulating phase is absent in the ion-exchanged single crystals, while it is observed in the [Formula: see text] precursors. Comparative studies of the structure, magnetization, and superconductivity on the parent A 0.80Fe1.81Se2 and the ion-exchanged ([Formula: see text])OHFeSe crystals are discussed. A phase diagram including antiferromagnetic spin density wave and superconducting phases is also proposed. PMID:26656943

  12. Wurtzite structure Sc{sub 1-x}Al{sub x}N solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

    SciTech Connect

    Hoeglund, Carina; Birch, Jens; Bareno, Javier; Persson, Per O. A.; Wingqvist, Gunilla; Zukauskaite, Agne; Hultman, Lars; Alling, Bjoern; Czigany, Zsolt

    2010-06-15

    AlN(0001) was alloyed with ScN with molar fractions up to {approx}22%, while retaining a single-crystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al{sub 2}O{sub 3}(0001) and MgO(111) substrates. Films with ScN contents between 23% and {approx}50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt structure Sc{sub 1-x}Al{sub x}N(111) films. The experimental results are analyzed with ion beam analysis, x-ray diffraction, and transmission electron microscopy, together with ab initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.

  13. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens of cartilage tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Constructs grown on Mir (A) tended to become more spherical, whereas those grown on Earth (B) maintained their initial disc shape. These findings might be related to differences in cultivation conditions, i.e., videotapes showed that constructs floated freely in microgravity but settled and collided with the rotating vessel wall at 1g (Earth's gravity). In particular, on Mir the constructs were exposed to uniform shear and mass transfer at all surfaces such that the tissue grew equally in all directions, whereas on Earth the settling of discoid constructs tended to align their flat circular areas perpendicular to the direction of motion, increasing shear and mass transfer circumferentially such that the tissue grew preferentially in the radial direction. A and B are full cross sections of constructs from Mir and Earth groups shown at 10-power. C and D are representative areas at the construct surfaces enlarged to 200-power. They are stained red with safranin-O. NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). Photo credit: Proceedings of the National Academy of Sciences.

  14. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Final samples from Mir and Earth appeared histologically cartilaginous throughout their entire cross sections (5-8 mm thick), with the exception of fibrous outer capsules. Constructs grown on Earth (A) appeared to have a more organized extracellular matrix with more uniform collagen orientation as compared with constructs grown on Mir (B), but the average collagen fiber diameter was similar in the two groups (22 +- 2 nm) and comparable to that previously reported for developing articular cartilage. Randomly oriented collagen in Mir samples would be consistent with previous reports that microgravity disrupts fibrillogenesis. These are transmission electron micrographs of constructs from Mir (A) and Earth (B) groups at magnifications of x3,500 and x120,000 (Inset). The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Credit: Proceedings of the National Academy of Sciences.

  15. Confocal Raman studies in determining crystalline nature of PECVD grown Si nanowires

    SciTech Connect

    Ahmed, Nafis; Bhargav, P. Balaji; Ramasamy, P.; Sivadasan, A. K.; Tyagi, A. K.; Dhara, S.; Amirthapandian, S.; Panigrahi, B. K.; Bhattacharya, S.

    2015-06-24

    Silicon nanowires of diameter ∼200 nm and length of 2-4 µm are grown in the plasma enhanced chemical vapour deposition technique using nanoclustered Au catalyst assisted vapour-liquid-solid process. The crystallinity in the as-grown and annealed samples is studied using confocal Raman spectroscopic studies. Amorphous phase is formed in the as-grown samples. Structural studies using high resolution transmission electron microscopy confirm the polycrystalline nature in the annealed sample.

  16. Comment on “Structural, dielectric, optical and ferroelectric property of urea succinic acid crystals grown in aqueous solution containing maleic acid” by B.K. Singh et al. [J. Phys. Chem. Solids 71 (2010) 1774

    NASA Astrophysics Data System (ADS)

    Tylczyński, Zbigniew

    2012-07-01

    The volume of elementary cell of the urea succinic acid (M-USA) growing from a solution containing 1 mol% maleic acid is 69% greater than that of urea succinic acid (USA) grown in the usual conditions. M-USA crystallises in the monoclinic system with a centre of symmetry, which excludes the piezoelectric and ferroelectric properties. The results presented in the paper commented on are artefacts.

  17. Magnetization dynamics of cobalt grown on graphene

    SciTech Connect

    Berger, A. J.; White, S. P.; Adur, R.; Pu, Y.; Hammel, P. C.; Amamou, W.; Kawakami, R. K.

    2014-05-07

    Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidth—an often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1 nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

  18. Magnetization dynamics of cobalt grown on graphene

    NASA Astrophysics Data System (ADS)

    Berger, A. J.; Amamou, W.; White, S. P.; Adur, R.; Pu, Y.; Kawakami, R. K.; Hammel, P. C.

    2014-05-01

    Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidth—an often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1 nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

  19. Seedborne fungal contamination: consequences in space-grown wheat

    NASA Technical Reports Server (NTRS)

    Bishop, D. L.; Levine, H. G.; Kropp, B. R.; Anderson, A. J.; Hood, E. E. (Principal Investigator)

    1997-01-01

    Plants grown in microgravity are subject to many environmental stresses that may promote microbial growth and result in disease symptoms. Wheat (cv. Super Dwarf) recovered from an 8-day mission aboard a NASA (National Aeronautics and Space Administration) space shuttle showed disease symptoms, including girdling of leaf sheaths and chlorosis and necrosis of leaf and root tissues. A Neotyphodium species was isolated from the seed and leaf sheaths of symptomatic wheat used in the spaceflight mission. Certain isozymes of a peroxidase unique to extracts from the microgravity-grown plants were observed in extracts from earth-grown Neotyphodium-infected plants but were not present in noninfected wheat. The endophytic fungus was eliminated from the wheat seed by prolonged heat treatment at 50 degrees C followed by washes with water at 50 degrees C. Plants from wheat seed infected with the Neotyphodium endophyte were symptomless when grown under greenhouse conditions, whereas symptoms appeared after only 4 days of growth in closed containers. Disease spread from an infected plant to noninfected plants in closed containers. Dispersion via spores was found on asymptomatic plants at distances of 7 to 18 cm from infected plants. The size and shape of the conidia, mycelia, and phialide-bearing structures and the ability to grow rapidly on carbohydrates, especially xylose, resembled the characteristics of N. chilense, which is pathogenic on orchard grass, Doctylis glomerati. The Neotyphodium wheat isolate caused disease symptoms on other cereals (wheat cv. Malcolm, orchard grass, barley, and maize) grown in closed containers.

  20. Seedborne fungal contamination: consequences in space-grown wheat.

    PubMed

    Bishop, D L; Levine, H G; Kropp, B R; Anderson, A J

    1997-11-01

    Plants grown in microgravity are subject to many environmental stresses that may promote microbial growth and result in disease symptoms. Wheat (cv. Super Dwarf) recovered from an 8-day mission aboard a NASA (National Aeronautics and Space Administration) space shuttle showed disease symptoms, including girdling of leaf sheaths and chlorosis and necrosis of leaf and root tissues. A Neotyphodium species was isolated from the seed and leaf sheaths of symptomatic wheat used in the spaceflight mission. Certain isozymes of a peroxidase unique to extracts from the microgravity-grown plants were observed in extracts from earth-grown Neotyphodium-infected plants but were not present in noninfected wheat. The endophytic fungus was eliminated from the wheat seed by prolonged heat treatment at 50 degrees C followed by washes with water at 50 degrees C. Plants from wheat seed infected with the Neotyphodium endophyte were symptomless when grown under greenhouse conditions, whereas symptoms appeared after only 4 days of growth in closed containers. Disease spread from an infected plant to noninfected plants in closed containers. Dispersion via spores was found on asymptomatic plants at distances of 7 to 18 cm from infected plants. The size and shape of the conidia, mycelia, and phialide-bearing structures and the ability to grow rapidly on carbohydrates, especially xylose, resembled the characteristics of N. chilense, which is pathogenic on orchard grass, Doctylis glomerati. The Neotyphodium wheat isolate caused disease symptoms on other cereals (wheat cv. Malcolm, orchard grass, barley, and maize) grown in closed containers. PMID:11540734

  1. Increased occurrence of pesticide residues on crops grown in protected environments compared to crops grown in open field conditions.

    PubMed

    Allen, Gina; Halsall, Crispin J; Ukpebor, Justina; Paul, Nigel D; Ridall, Gareth; Wargent, Jason J

    2015-01-01

    Crops grown under plastic-clad structures or in greenhouses may be prone to an increased frequency of pesticide residue detections and higher concentrations of pesticides relative to equivalent crops grown in the open field. To test this we examined pesticide data for crops selected from the quarterly reports (2004-2009) of the UK's Pesticide Residue Committee. Five comparison crop pairs were identified whereby one crop of each pair was assumed to have been grown primarily under some form of physical protection ('protected') and the other grown primarily in open field conditions ('open'). For each pair, the number of detectable pesticide residues and the proportion of crop samples containing pesticides were statistically compared (n=100 s samples for each crop). The mean concentrations of selected photolabile pesticides were also compared. For the crop pairings of cabbage ('open') vs. lettuce ('protected') and 'berries' ('open') vs. strawberries ('protected') there was a significantly higher number of pesticides and proportion of samples with multiple residues for the protected crops. Statistically higher concentrations of pesticides, including cypermethrin, cyprodinil, fenhexamid, boscalid and iprodione were also found in the protected crops compared to the open crops. The evidence here demonstrates that, in general, the protected crops possess a higher number of detectable pesticides compared to analogous crops grown in the open. This may be due to different pesticide-use regimes, but also due to slower rates of pesticide removal in protected systems. The findings of this study raise implications for pesticide management in protected-crop systems. PMID:25465948

  2. Electronic and magnetic structure of epitaxial Fe3O4(001 ) /NiO heterostructures grown on MgO(001) and Nb-doped SrTiO3(001 )

    NASA Astrophysics Data System (ADS)

    Kuepper, K.; Kuschel, O.; Pathé, N.; Schemme, T.; Schmalhorst, J.; Thomas, A.; Arenholz, E.; Gorgoi, M.; Ovsyannikov, R.; Bartkowski, S.; Reiss, G.; Wollschläger, J.

    2016-07-01

    We study the underlying chemical, electronic, and magnetic properties of a number of magnetite-based thin films. The main focus is placed onto Fe3O4 (001)/NiO bilayers grown on MgO(001) and Nb-SrTiO3(001) substrates. We compare the results with those obtained on pure Fe3O4 (001) thin films. It is found that the magnetite layers are oxidized and Fe3 + dominates at the surfaces due to maghemite (γ -Fe2O3 ) formation, which decreases with increasing magnetite layer thickness. For layer thicknesses of around 20 nm and above, the cationic distribution is close to that of stoichiometric Fe3O4 . At the interface between NiO and Fe3O4 we find the Ni to be in a divalent valence state, with unambiguous spectral features in the Ni 2 p core level x-ray photoelectron spectra typical for NiO. The formation of a significant NiFe2O4 interlayer can be excluded by means of x-ray magnetic circular dichroism. Magneto-optical Kerr effect measurements reveal significant higher coercive fields compared to magnetite thin films grown on MgO(001), and an altered in-plane easy axis pointing in the <100 > direction. We discuss the spin magnetic moments of the magnetite layers and find that a thickness of 20 nm or above leads to spin magnetic moments close to that of bulk magnetite.

  3. Harvesting microalgae grown on wastewater.

    PubMed

    Udom, Innocent; Zaribaf, Behnaz H; Halfhide, Trina; Gillie, Benjamin; Dalrymple, Omatoyo; Zhang, Qiong; Ergas, Sarina J

    2013-07-01

    The costs and life cycle impacts of microalgae harvesting for biofuel production were investigated. Algae were grown in semi-continuous culture in pilot-scale photobioreactors under natural light with anaerobic digester centrate as the feed source. Algae suspensions were collected and the optimal coagulant dosages for metal salts (alum, ferric chloride), cationic polymer (Zetag 8819), anionic polymer (E-38) and natural coagulants (Moringa Oleifera and Opuntia ficus-indica cactus) were determined using jar tests. The relative dewaterability of the algae cake was estimated by centrifugation. Alum, ferric chloride and cationic polymer could all achieve >91% algae recovery at optimal dosages. Life cycle assessment (LCA) and cost analysis results revealed that cationic polymer had the lowest cost but the highest environmental impacts, while ferric chloride had the highest cost and lowest environmental impacts. Based on the LCA results, belt presses are the recommended algae dewatering technology prior to oil extraction. PMID:23648758

  4. van der Waals Heterostructures Grown by MBE

    NASA Astrophysics Data System (ADS)

    Hinkle, Christopher

    In this work, we demonstrate the high-quality MBE heterostructure growth of various layered 2D materials by van der Waals epitaxy (VDWE). The coupling of different types of van der Waals materials including transition metal dichalcogenide thin films (e.g., WSe2, WTe2, HfSe2) , insulating hexagonal boron nitride (h-BN), and topological insulators (e.g., Bi2Se3) allows for the fabrication of novel electronic devices that take advantage of unique quantum confinement and spin-based characteristics. The relaxed lattice-matching criteria of van der Waals epitaxy has allowed for high-quality heterostructure growth with atomically abrupt interfaces, allowing us to couple these materials based primarily on their band alignment and electronic properties. We will discuss the impact of sample preparation, surface reactivity, and lattice mismatch of various substrates (sapphire, graphene, TMDs, Bi2Se3) on the growth mode and quality of the films and will discuss our studies of substrate temperature and flux rates on the resultant growth and grain size. Structural and chemical characterization was conducted via reflection high energy electron diffraction (RHEED, X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning tunneling microscopy/spectroscopy (STM/S), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Experimentally determined band alignments have been determined and compared with first-principles calculations allowing the design of novel low-power logic and magnetic memory devices. Initial results from the electrical characterization of these grown thin films and some simple devices will also be presented. These VDWE grown layered 2D materials show significant potential for fabricating novel heterostructures with tunable band alignments and magnetic properties for a variety of nanoelectronic and optoelectronic applications.

  5. Structural properties of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

    SciTech Connect

    Liu, X.; Leiner, J.; Dobrowolska, M.; Furdyna, J. K.; Smith, D. J.; Fan, J.; Zhang, Y.-H.; Cao, H.; Chen, Y. P.; Kirby, B. J.

    2011-10-24

    Thin films of Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} have been grown on deoxidized GaAs(001) substrates using molecular beam epitaxy. Cross-sectional transmission electron microscopy established the highly parallel nature of the Te(Se)-Bi-Te(Se)-Bi-Te(Se) quintuple layers deposited on the slightly wavy GaAs substrate surface and the different crystal symmetries of the two materials. Raman mapping confirmed the presence of the strong characteristic peaks reported previously for these materials in bulk form. The overall quality of these films reveals the potential of combining topological insulators with ferromagnetic semiconductors for future applications.

  6. CdS and Cd-Free Buffer Layers on Solution Phase Grown Cu2ZnSn(SxSe1- x)4 :Band Alignments and Electronic Structure Determined with Femtosecond Ultraviolet Photoemission Spectroscopy

    SciTech Connect

    Haight, Richard; Barkhouse, Aaron; Wang, Wei; Yu, Luo; Shao, Xiaoyan; Mitzi, David; Hiroi, Homare; Sugimoto, Hiroki

    2013-12-02

    The heterojunctions formed between solution phase grown Cu2ZnSn(SxSe1- x)4(CZTS,Se) and a number of important buffer materials including CdS, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission spectroscopy (fs-UPS) and photovoltage spectroscopy. With this approach we extract the magnitude and direction of the CZTS,Se band bending, locate the Fermi level within the band gaps of absorber and buffer and measure the absorber/buffer band offsets under flatband conditions. We will also discuss two-color pump/probe experiments in which the band bending in the buffer layer can be independently determined. Finally, studies of the bare CZTS,Se surface will be discussed including our observation of mid-gap Fermi level pinning and its relation to Voc limitations and bulk defects.

  7. The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Mei, Fuhong; Jia, Wei; Yu, Chunyan; Liu, Xuguang; Xu, Bingshe

    2016-05-01

    The role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored. The morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail. After 10- and 15-min three-dimensional growth, the nucleation sites are very important for the bulk GaN crystal quality. They have a close relationship with the nucleation layer thickness, as confirmed through the scanning electron microscope (SEM) analysis. Nucleation sites formed mainly on patterns are bad for bulk GaN crystal quality and nucleation sites formed mainly in the trenches of PSS mounds are good for bulk GaN crystal quality, as proved by X-ray diffraction analysis. Nucleation layer thickness can effectively control the nucleation sites and thus determine the crystal quality of bulk GaN.

  8. Structure and magnetotransport properties of epitaxial nanocomposite La0.67Ca0.33MnO3:SrTiO3 thin films grown by a chemical solution approach

    NASA Astrophysics Data System (ADS)

    Fei, Ling; Zhu, Leyi; Cheng, Xuemei; Wang, Haiyan; Baber, Stacy M.; Hill, Joshua; Lin, Qianglu; Xu, Yun; Deng, Shuguang; Luo, Hongmei

    2012-02-01

    Epitaxial La0.67Ca0.33MnO3:SrTiO3 (LCMO:STO) composite thin films have been grown on single crystal LaAlO3(001) substrates by a cost effective polymer-assisted deposition method. Both x-ray diffraction and high-resolution transmission electron microscopy confirm the growth of epitaxial films with an epitaxial relationship between the films and the substrates as (002)film||(002)sub and [202]film||[202]sub. The transport property measurement shows that the STO phase significantly increases the resistivity and enhances the magnetoresistance (MR) effect of LCMO and moves the metal-insulator transition to lower temperatures. For example, the MR values measured at magnetic fields of 0 and 3 T are -44.6% at 255 K for LCMO, -94.2% at 125 K for LCMO:3% STO, and -99.4% at 100 K for LCMO:5% STO, respectively.

  9. Crystal chemistry of hydrothermally grown ternary alkali rare earth fluorides.

    PubMed

    McMillen, Colin D; Comer, Sara; Fulle, Kyle; Sanjeewa, Liurukara D; Kolis, Joseph W

    2015-12-01

    The structural variations of several alkali metal rare earth fluoride single crystals are summarized. Two different stoichiometric formulations are considered, namely those of ARE2F7 and ARE3F10 (A = K, Rb, Cs; RE = Y, La-Lu), over a wide range of ionic radii of both the alkali and rare earth (RE) ions. Previously reported and several new single-crystal structures are considered. The new single crystals are grown using hydrothermal methods and the structures are compared with literature reports of structures grown from both melts and hydrothermal fluids. The data reported here are combined with the literature data to gain a greater understanding of structural subtleties surrounding these systems. The work underscores the importance of the size of the cations to the observed structure type and also introduces synthetic technique as a contributor to the same. New insights based on single-crystal structure analysis in the work introduce a new disordered structure type in the case of ARE2F7, and examine the trends and boundaries of the ARE3F10 stoichiometry. Such fundamental structural information is useful in understanding the potential applications of these compounds as optical materials. PMID:26634734

  10. Superior properties of plasma-assisted room-temperature-grown graphene from STM studies

    NASA Astrophysics Data System (ADS)

    Teague, M. L.; Lin, W.-H.; Boyd, D. A.; Yeh, N.-C.; Lo, Y.-Y.; Wu, C.-I.; Chan, W.-Y.; Su, W.-B.; Chang, C.-S.

    2013-03-01

    We report scanning tunneling microscopic and spectroscopic (STM/STS) studies of large-area monolayer graphene grown at room temperature (RT) on Cu foils, Cu (100) and Cu (111) single crystals, and compare the properties of these samples with high-temperature (1000 °C) CVD-grown graphene. All RT-grown graphene exhibit highly ordered honeycomb structures over ~ 1 cm2 areas, smooth surface morphology, much reduced strain (< 0.1%) and additional Moire patterns for samples grown on single crystals. The structural quality and reduced strain obtained from STM studies are consistent with finds from Raman spectra. In contrast, high-temperature CVD-grown graphene revealed strongly distorted atomic structures and large strain, giving rise to giant pseudo-magnetic fields and charging effects as manifested by the conductance peaks at quantized energies and the strongly enhanced local conductance in highly strained regions. These strain-induced effects are believed to be responsible for the reduced electrical mobility in typical CVD-grown graphene. The superior structural and electronic properties demonstrated by our RT-grown graphene are promising for a wide range of applications. This work was supported by NSF through IQIM at Caltech.

  11. Study of the Mechanical Behavior of Radially Grown Fivefold Twinned Nanowires on the Atomic Scale.

    PubMed

    Yue, Yonghai; Zhang, Qi; Yang, Zhenyu; Gong, Qihua; Guo, Lin

    2016-07-01

    In situ bending tests and dynamic modeling simulations are for the first time revealing the mechanical behavior of copper nanowires (NW) with radially grown fivefold twin structures on the atomic scale. Combining the simulations with the experimental results it is shown that both the twin boundaries (TBs) and the twin center act as dislocation sources. TB migration and L-locks are readily observed in these types of radially grown fivefold-twin structures. PMID:27231215

  12. Spectroscopy of Defects in Epitaxially Grown Para-sexiphenyl Nanostructures

    NASA Astrophysics Data System (ADS)

    Kadashchuk, A.; Schols, S.; Skryshevski, Yu.; Beynik, I.; Teichert, C.; Hernandez-Sosa, G.; Sitter, H.; Andreev, A.; Frank, P.; Winkler, A.

    We present a study of steady-state- and time-resolved photoluminescence of para-sexiphenyl (PSP) films on KCl grown by organic molecular beam epitaxy (OMBE). Using different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites but keeping virtually untouched their chemical structure. By this comparative study we prove that the broad red-shifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. The relative intensity of the defect emission band observed in the delayed spectra was found to be drastically suppressed in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.

  13. MBE grown high quality GaN films and devices

    NASA Astrophysics Data System (ADS)

    Kim, W.; Aktas, O.; Salvador, A.; Botchkarev, A.; Sverdlov, B.; Mohammad, S. N.; Morkoç, H.

    1997-02-01

    GaN films with much improved structural, transport, and optical properties have been prepared by molecular beam epitaxy using NH 3 as a nitrogen source. Films with a wide range of resistivity, including highly resistive ones, were grown with a chosen growth rate of 1.2 μm/h. The electron mobility in modulation doped structures is about 450 and 850 cm 2/Vs at 300 and 77 K, respectively, with an areal carrier concentration of about 10 13 cm -2. Low temperature luminescence shows A- and B-free-excitons as well as the excited state of the A- and B-excitons, the first known observation, attesting to the quality of the samples. These transition energies are consistent with the best MOCVD samples and represent a sizable reduction of the pandemic zincblende phase in MBE grown films. The high quality of films was demonstrated by the realization of high performance MODFETs and Schottky diodes.

  14. Cooling by means of passively grown ice

    SciTech Connect

    Gorski, A.; Schertz, W.; Wantroba, A.; Rush, R.; Falkenberg, J.

    1981-01-01

    A solar cooling technique is described that uses ice passively-grown the previous winter. Using heat pipes (thermal syphons), ice is grown and stored in the same container ready for the coming cooling season. This modern adaption of an old cooling technique may have side application both in this country as well as in more northern regions.

  15. Vitamin C content of organically grown produce

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Organically grown produce is the fastest growing sector of fresh market sales in the U.S. While accounting for only 3% of total produce sales, it is growing by 20% per year. There has been much debate over the relative health merits of organically grown fruits and vegetables. Most consumers believ...

  16. Characterization of sodium chloride crystals grown in microgravity

    NASA Astrophysics Data System (ADS)

    Fontana, Pietro; Schefer, Jürg; Pettit, Donald

    2011-06-01

    NaCl crystals grown by the evaporation of an aqueous salt solution in microgravity on the International Space Station (ISS) were characterized and compared to salt crystals grown on earth. NaCl crystallized as thin wafers in a supersaturated film of 200-700 μm thickness and 50 mm diameter, or as hopper cubes in 10 mm diameter supersaturated spheres. Neutron diffraction shows no change in crystal structure and in cell parameters compared to earth-grown crystals. However, the morphology can be different, frequently showing circular, disk-like shapes of single crystals with <1 1 1> perpendicular to the disks, an unusual morphology for salt crystals. In contrast to the growth on earth the lateral faces of the microgravity tabular hopper crystals are symmetrical because they are free floating during the crystallization process. Hopper cubes were produced without the need to suspend the growing crystals by an ongoing stirring. "Fleur de Sel" is shown as an example of two-dimensional growth of salt on earth and compared to the space grown crystals. It is shown that in microgravity conditions brine fluid inclusions form within the salt crystals.

  17. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    NASA Astrophysics Data System (ADS)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  18. Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

    SciTech Connect

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2015-03-28

    We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

  19. Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Chengguo; Liu, Hongfei; Chua, Soo Jin

    2015-03-01

    We report the influences of group-III source preflow, which were introduced prior to the growth of the low temperature GaN on the polarity, photoluminescence (PL), and crystallographic properties of GaN epilayers grown on nitridated c-plane sapphire substrates by metal-organic chemical vapor deposition. By studying the surface morphology evolutions under chemical etching in KOH, we found that with increasing the trimethyl-gallium (TMGa) preflow duration (t), the polarity of the GaN film can be changed from a complete N-polarity to a mixture of N- and Ga-polarity and further to a complete Ga-polarity. PL and high-resolution X-ray diffraction studies revealed that the impurity incorporation and the edge- and screw-type threading dislocations are strongly polarity dependent. A further study at the optimized t (i.e., 30 s for TMGa) shows that the polarity inversion of GaN can be realized not only by TMGa preflow but also by trimethyl-aluminium preflow and by trimethyl-indium preflow. A two-monolayer model was employed to explain the polarity inversion mechanism.

  20. Tissue grown in space in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    For 5 days on the STS-70 mission, a bioreactor cultivated human colon cancer cells, such as the culture section shown here, which grew to 30 times the volume of control specimens grown on Earth. This significant result was reproduced on STS-85 which grew mature structures that more closely match what are found in tumors in humans. The two white circles within the tumor are part of a plastic lattice that helped the cells associate. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). The NASA Bioreactor provides a low turbulence culture environment which promotes the formation of large, three-dimensional cell clusters. Due to their high level of cellular organization and specialization, samples constructed in the bioreactor more closely resemble the original tumor or tissue found in the body. NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Cartilage, bone marrow, heart muscle, skeletal muscle, pancreatic islet cells, liver and kidney are just a few of the normal tissues being cultured in rotating bioreactors by investigators.

  1. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bignardi, Luca; van Dorp, Willem F.; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; de Hosson, Jeff Th. M.; Stöhr, Meike; Rudolf, Petra

    2013-09-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer.

  2. Microscopic characterisation of suspended graphene grown by chemical vapour deposition.

    PubMed

    Bignardi, Luca; van Dorp, Willem F; Gottardi, Stefano; Ivashenko, Oleksii; Dudin, Pavel; Barinov, Alexei; De Hosson, Jeff Th M; Stöhr, Meike; Rudolf, Petra

    2013-10-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron spectromicroscopy, while the structural and crystalline properties are studied by TEM and Raman spectroscopy. We demonstrate that the suspended graphene membrane locally shows electronic properties comparable with those of samples prepared by micromechanical cleaving of graphite. Measurements show that the area of high quality suspended graphene is limited by the folding of the graphene during the transfer. PMID:23945527

  3. Columnar grown copper films on polyimides strained beyond 100.

    PubMed

    Sun, Jeong-Yun; Lee, Hae-Ryung; Oh, Kyu Hwan

    2015-01-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a 'conductive net,' through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors. PMID:26337668

  4. Columnar grown copper films on polyimides strained beyond 100%

    PubMed Central

    Sun, Jeong-Yun; Lee, Hae-Ryung; Hwan Oh, Kyu

    2015-01-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a ‘conductive net,’ through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors. PMID:26337668

  5. Laser alexandrite crystals grown by horizontal oriented crystallization technique

    NASA Astrophysics Data System (ADS)

    Gurov, V. V.; Tsvetkov, E. G.; Yurkin, A. M.

    2008-05-01

    Comparative studies were performed for alexandrite crystals, Al 2BeO 4:Cr 3+, employed in solid state lasers and grown by the horizontal oriented crystallization (HOC) technique and alexandrite crystals grown by the Czochralski (Cz) method. It was shown that the structural quality and possibilities of generation of stimulated emission HOC-crystals are similar to Cz-crystals, whereas their damage threshold is about three times higher. The obtained results and considerably lower cost price of HOC-alexandrite crystals prove their advantageous application in powerful laser systems, which require large laser rods with a higher resistance to laser beam. It is emphasized that application of HOC technique is promising for growth of laser crystals of other high-temperature oxide compounds.

  6. Diffusion-limited aggregates grown on nonuniform substrates

    NASA Astrophysics Data System (ADS)

    Cornette, V.; Centres, P. M.; Ramirez-Pastor, A. J.; Nieto, F.

    2013-12-01

    In the present paper, patterns of diffusion-limited aggregation (DLA) grown on nonuniform substrates are investigated by means of Monte Carlo simulations. We consider a nonuniform substrate as the largest percolation cluster of dropped particles with different structures and forms that occupy more than a single site on the lattice. The aggregates are grown on such clusters, in the range the concentration, p, from the percolation threshold, pc up to the jamming coverage, pj. At the percolation threshold, the aggregates are asymmetrical and the branches are relatively few. However, for larger values of p, the patterns change gradually to a pure DLA. Tiny qualitative differences in this behavior are observed for different k sizes. Correspondingly, the fractal dimension of the aggregates increases as p raises in the same range pc≤p≤pj. This behavior is analyzed and discussed in the framework of the existing theoretical approaches.

  7. Columnar grown copper films on polyimides strained beyond 100%

    NASA Astrophysics Data System (ADS)

    Sun, Jeong-Yun; Lee, Hae-Ryung; Hwan Oh, Kyu

    2015-09-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a ‘conductive net,’ through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors.

  8. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Ahmadi, Elaheh; Wu, Feng; Li, Haoran; Kaun, Stephen W.; Tahhan, Maher; Hestroffer, Karine; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2015-05-01

    Since on-axis GaN-on-sapphire substrates with low threading dislocation density are not available in the N-face orientation, we explored the growth of InAlN on vicinal (4° miscut along GaN ≤ft< 10\\bar{1}0 \\right> ) GaN-on-sapphire substrates. The microstructure of In0.18Al0.82N layers grown by plasma-assisted molecular beam epitaxy at different temperatures was studied using scanning transmission electron microscopy (STEM). The cross-sectional and plan-view STEM images revealed lateral variations in the InAlN composition along ≤ft< 10\\bar{1}0 \\right> (perpendicular to the step edges). Also, step bunching was observed in InAlN layers thicker than 10 nm. N-face high-electron-mobility transistor structures with lattice-matched InAlN backbarriers were then grown on these vicinal substrates with different InAlN thicknesses. Transmission line measurements showed that step bunching and lateral variation of InAlN composition degraded the two-dimensional electron gas (2DEG) mobility in the directions parallel and perpendicular to the steps. A 2DEG charge density of 1.1 × 1013 cm-2 and mobility of 1850 cm2 V-1 s-1 were achieved on a GaN/AlN/InAlN/GaN structure with 7.5 nm thick In0.18Al0.82N. By designing a double backbarrier (In0.18Al0.82N(7.5 nm)/Al0.57Ga0.43N(7 nm)), a 2DEG charge density of 2 × 1013 cm-2 and mobility of 1360 cm2 V-1 s-1 were attained, which resulted in a sheet resistance of 230 Ω/□.

  9. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.; Ng, G. I.

    2015-06-01

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr4 beam equivalent pressure of 1.86 × 10-7 mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  10. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

    SciTech Connect

    Ravikiran, L.; Radhakrishnan, K. Ng, G. I.; Munawar Basha, S.; Dharmarasu, N.; Agrawal, M.; Manoj kumar, C. M.; Arulkumaran, S.

    2015-06-28

    The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffers also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.

  11. Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigor'ev, D. V.; Tarasenko, V. F.; Shulepov, M. A.

    2015-11-01

    The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density of positive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.

  12. Defect formation in 4H-SiC single crystal grown on the prismatic seeds

    NASA Astrophysics Data System (ADS)

    Fadeev, A. Yu; Lebedev, A. O.; Tairov, Yu M.

    2014-12-01

    The defect structure of 4H silicon carbide single crystals grown by PVT method on three prismatic seeds (10-10), (11-20) and (8.3.-11.0) is considered. The only defects existing in the grown ingots are stacking faults and basal plane dislocations. The type of stacking fault is studied. The dependence of stacking fault morphology on the seed orientation is analyzed.

  13. Sensitivity of light-grown and dark-grown Euglena cells to gamma-irradiation.

    PubMed

    Nair, K A; Netrawali, M S

    1979-09-01

    Light-grown cells which contain fully developed chloroplasts were found to be more resistant to gamma-irradiation than dark-grown cells which are devoid of chloroplasts. The radio-resistance of dark-grown cells progressively increased during light-induced development of chloroplasts and, conversely, radio-resistance of light-grown cells decreased progressively with chloroplast de-development during growth in the dark. The presence of chloroplasts seemed to play a major role in the capacity of cells to recover from radiation damage, the efficiency of cellular recovery being correlatable with the degree of chloroplast development. PMID:315395

  14. Grown from lithium flux, the ErCo5Si(3.17) silicide is a combination of disordered derivatives of the UCo5Si3 and Yb6Co30P19 structure types.

    PubMed

    Stetskiv, Andrij; Rozdzynska-Kielbik, Beata; Misztal, Renata; Pavlyuk, Volodymyr

    2015-06-01

    A ternary hexaerbium triacontacobalt enneakaidecasilicide, ErCo5Si(3.17), crystallizes as a combination of disordered variants of the hexagonal UCo5Si3 (P6₃/m) and Yb6Co30P19 (P6) structure types and is closely related to the Sc6Co30Si19 and Ce6Rh30Si19 types. The Er, Co and three of the Si atoms occupy sites of m.. symmetry and a fourth Si atom occupies a site of -6.. symmetry. The environment of the Er atom is a 21-vertex pseudo-Frank-Kasper polyhedron. Trigonal prismatic coordination is observed for the Si atoms. The Co atoms are enclosed in heavily deformed cuboctahedra and 11-vertex polyhedra. Crystallochemistry analysis and the data from electronic structure calculations (TB-LMTO-ASA) suggest that the Er atoms form positively charged cations which compensate the negative charge of the [Co12Si9](m-) polyanions. PMID:26044334

  15. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    NASA Astrophysics Data System (ADS)

    Davies, M. J.; Hammersley, S.; Massabuau, F. C.-P.; Dawson, P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-02-01

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  16. R3Au(6+x)Al26T (R = Ca, Sr, Eu, Yb; T = early transition metal): a large family of compounds with a stuffed BaHg11 structure type grown from aluminum flux.

    PubMed

    Latturner, Susan E; Bilc, Daniel; Mahanti, S D; Kanatzidis, Mercouri G

    2009-02-16

    A collection of new quaternary intermetallic compounds with a cubic, stuffed BaHg(11) structure type has been synthesized by the combination of a divalent rare earth or alkaline earth metal R, an early transition metal T, and gold in an excess of molten aluminum. Structural characterization of these R(3)Au(6+x)Al(26)T compounds by powder and single crystal X-ray diffraction indicates that the unit cell varies with the radii of the early transition metal T and the rare earth/alkaline earth R as expected. The element T (where T = group 4, 5, 6, and 7 element) appears to be responsible for the stabilization of up to 43 different members of the R(3)Au(6+x)Al(26)T family of compounds. Varying amounts of disorder and trends in partial occupancies of the Au stuffed site--the site that is vacant in the parent compound BaHg(11)--are also indicated by the diffraction studies of this family of compounds. Magnetic susceptibility data reveals that the transition metal atoms in these materials do not possess local magnetic moments. For the magnetic rare earth containing materials, the europium compounds undergo a ferromagnetic transition at 10 K, and the ytterbium analogues show mixed valent behavior. Band structure calculations also support a mixed valent state for Yb in these compounds. PMID:19146424

  17. Properties of (GaIn)As and InP bulk epitaxial layers, (GaIn)As/InP-heterostructures and -pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine and ditertiarybutyl phosphine

    SciTech Connect

    Protzmann, H.; Hoehnsdorf, F.; Spika, Z.

    1996-12-31

    In this work the use of the novel ditertiarybutyl-phosphorus and -arsenic precursors for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application with respect to InP/(GaIn)As-heterostructures and pin-detector device structures has been studied. Layer quality has been investigated by means of optical and scanning electron microscopy, temperature dependent van der Pauw-Hall measurements, temperature dependent luminescence measurements, high resolution double crystal X-ray diffraction, XRD- and PL-mappings, CV-depth profiling and SIMS measurements. The InP/(GaIn)As-multi quantum well heterostructures exhibit narrow XRD-linewidths of both the main reflection peak as well as the superlattice satellite peaks down to the theoretical limit. The n-type background doping-level of the (GaIn)As layers is reduced to 2 {times} 10{sup 15} cm{sup {minus}3} for optimized growth conditions. The low temperature luminescence is characterized by intense and narrow exciton transitions (2--3 meV FWHM). A InP/(GaIn)As-layer structure has been processed to planar pin-diode detector structures of 55 {micro}m diameter. The devices show dark currents in the range of 1--1.5 nA at a reverse bias of {minus}5 V. The distribution of the I/U-characteristic is homogeneous over the entire processed wafer area. The device yield exceeds 95%.

  18. Carbon incorporation in AlGaAs grown by CBE

    NASA Astrophysics Data System (ADS)

    Lee, B. J.; Houng, Y. M.; Miller, J. N.; Turner, J. E.

    1990-10-01

    The incorporation of carbon into unintentionally doped Al xGa 1- xAs epilayers grown by chemical beam epitaxy (CBE) using arsine and various combinations of group III sources was investigated. Growth of unintentionally doped Al xGa 1- xAs using triethylgallium (TEGa)+triisobutylaluminum (TIBAl) resulted in lower hole and carbon concentrations than those grown from TEGa+triethylaluminum (TEAl). The carbon concentration in AlGaAs epilayers increased with decreasing growth temperature below 560°C and increased with increasing growth temperature above 560°C. This "U-shaped" dependence of carbon concentration on growth temperature exhibited its minimum value at ˜ 560°C for both the TEGa+TEAl and TEGa+TIBAl systems. The alkyl-Al compounds are thought to be the controlling species for the carbon incorporation in the low temperature regime, while the AlCH 3 formed through β-methyl elimination is responsible for the carbon incorporation in the high temperature regime. Based on this study, we are able to grow high quality AlGaAs epilayers with reduced carbon contamination by using TIBAl instead of TEAl at the growth temperature of 560°C with a V/III ratio of 20. AlGaAs/GaAs modulation-doped structures grown from TEGa+TIBAl show a two-dimensional electron gas mobility as high as 88,600 cm 2/V·s at 77 K, which is a 40% improvement over that grown from TEGa+TEAl, with a sheet carrier concentration of 6x10 11 cm -2 and a spacer layer thickness of 150 Å.

  19. Tissue grown in NASA Bioreactor

    NASA Technical Reports Server (NTRS)

    1998-01-01

    Cells from kidneys lose some of their special features in conventional culture but form spheres replete with specialized cell microvilli (hair) and synthesize hormones that may be clinically useful. Ground-based research studies have demonstrated that both normal and neoplastic cells and tissues recreate many of the characteristics in the NASA bioreactor that they display in vivo. Proximal kidney tubule cells that normally have rich apically oriented microvilli with intercellular clefts in the kidney do not form any of these structures in conventional two-dimensional monolayer culture. However, when normal proximal renal tubule cells are cultured in three-dimensions in the bioreactor, both the microvilli and the intercellular clefts form. This is important because, when the morphology is recreated, the function is more likely also to be rejuvenated. The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC).

  20. Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

    NASA Astrophysics Data System (ADS)

    Elovaara, Tomi; Huhtinen, Hannu; Majumdar, Sayani; Paturi, Petriina

    2016-09-01

    We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

  1. Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 μm laser structures on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G.

    1999-05-01

    The incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 2.0-2.5 μm wavelength range has been investigated. The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y=0.05 and y=0.20. Broad area AlGaAsSb/GaInAsSb single-quantum well laser diodes with quasi-cw output at room temperature at an emission wavelength of 2.03 μm and a threshold current density of 515 A/cm 2 for 1370 μm long and 70 μm wide devices have been fabricated. In order to shift the emission wavelength of the laser structures to longer wavelengths, the growth of lattice matched AlGaAsSb/GaInAsSb laser core structures with different In and As mole fractions in the quantum wells has been investigated.

  2. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    SciTech Connect

    Gladysiewicz, M.; Wartak, M. S.; Kudrawiec, R.

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  3. Cu2ZnSnSe4 Photovoltaic Absorber Grown by Vertical Gradient Freeze Technique

    NASA Astrophysics Data System (ADS)

    Das, Sandip; Mandal, Krishna C.

    2013-12-01

    High quality large grain single phase Cu2ZnSnSe4 (CZTSe) photovoltaic absorber material was grown by vertical gradient freeze (VGF) technique for the first time. Polycrystalline CZTSe ingot was grown in a vacuum sealed quartz ampoule inside a modified three-zone vertical Bridgman furnace employing a directional cooling. Structural and compositional analyses of the grown crystals were performed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The grown crystals exhibited highly crystalline tetragonal structure corresponding to kesterite Cu2ZnSnSe4 with lattice parameters of a = 5.696 Å and c = 11.338 Å as evidenced from XRD pattern. Raman spectra showed three characteristic peaks at 171.5, 194.6, and 231.1 cm-1 attributed to kesterite phase CZTSe. No other secondary phases were detected in the grown crystals. Thermoelectric probe measurements showed p-type conductivity of the grown crystals and energy dispersive X-ray spectroscopy (EDS) along the crystal growth direction showed uniform and stoichiometric elemental distribution. Our results show that VGF technique can be used to grow high quality kesterite compounds for photovoltaic application.

  4. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    SciTech Connect

    Shukrullah, S. E-mail: noranimuti-mohamed@petronas.com.my Mohamed, N. M. E-mail: noranimuti-mohamed@petronas.com.my Shaharun, M. S. E-mail: noranimuti-mohamed@petronas.com.my; Yasar, M.

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  5. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Vujisic, L.; Szofran, F. R.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years, especially under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 micrometers, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5 mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 micrometers. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  6. Stability of Detached Grown Germanium Single Crystals

    NASA Technical Reports Server (NTRS)

    Schweizer, M.; Volz, M. P.; Cobb, S. D.; Motakef, S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Detachment of the melt meniscus from the crucible during semiconductor Bridgman growth experiments has been observed in recent years especially, under microgravity experiments. Under earth conditions, the hydrostatic pressure counteracts the mechanism, whereby it is more difficult to achieve detached Bridgman growth. Attempts to get stable detached growth under terrestrial conditions have been discussed in the literature and have been the subject of recent experiments in our own group. The advantage of crystals grown without wall contact is obvious: In general, they possess a higher crystal quality than conventional Bridgman grown crystals with wall contact. However, due to the interaction of different parameters such as the wetting behavior of the melt with the crucible, and the dependence of the growth angle with the shape of the melt meniscus, the mechanism leading to detachment is very complicated and not completely understood. We have grown several doped and undoped Germanium crystals with the detached Bridgman and the normal Bridgman growth technique. Pyrolytic boron nitride containers were used for all growth experiments. In the detached grown crystals the typical gap thickness between the pBN crucible and the crystal is in the range of 10 to 100 microns, which was determined by performing profilometer measurements. Etch pit density measurements were also performed and a comparison between detached and attached grown crystals will be given. An interesting feature was detected on the surface of a detached grown crystal. Strong surface striations with an average axial distance of 0.5mm were observed around the whole circumference. The maximum fluctuation of the gap thickness is in the range of 5-10 microns. These variations of the detached gap along the crystal axis can be explained by a kind of stiction of the melt/crucible interface and thus by a variation of the meniscus shape. This phenomenon leading to the fluctuation of the gap thickness will be

  7. Self-doping effects in epitaxially grown graphene

    SciTech Connect

    Siegel, David A.; Zhou, Shuyun Y.; El Gabaly, Farid; Fedorov, Alexei V.; Schmid, Andreas K.; Lanzara, Alessandra

    2008-09-19

    Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

  8. Chirality of electrodeposits grown in a magnetic field

    NASA Astrophysics Data System (ADS)

    Mhíocháin, T. R.; Coey, J. M.

    2004-06-01

    Electrodeposits grown around a point cathode in a flat, horizontal electrochemical cell have fractal form. When grown in the presence of a perpendicular applied magnetic field, the deposits develop a spiral structure with chirality which reverses on switching the field direction. These structures are modeled numerically using biased variants of the diffusion limited aggregation (DLA) model. The effects of electric and magnetic fields are modeled successfully by varying the probabilities that a random walker will move in a given direction as a result of a Coulomb force and the Lorentz force-induced flow of electrolyte past the deposit surface. By contrast, a numerical model which considers only the effect of the Lorentz force on individual ions, without reference to the surface of the growing deposit, produces spiral structures with incorrect chirality. The modified DLA model is related to the differential equations for diffusion, migration, and convection. Length scales in the problem are understood by associating the step length of the random walker with the diffusion layer thickness, the lookup radius with the hydrodynamic boundary layer thickness and a point on the numerical deposit with a nucleation center for growth of a crystallite.

  9. Chirality of electrodeposits grown in a magnetic field.

    PubMed

    Mhíocháin, T R Ní; Coey, J M D

    2004-06-01

    Electrodeposits grown around a point cathode in a flat, horizontal electrochemical cell have fractal form. When grown in the presence of a perpendicular applied magnetic field, the deposits develop a spiral structure with chirality which reverses on switching the field direction. These structures are modeled numerically using biased variants of the diffusion limited aggregation (DLA) model. The effects of electric and magnetic fields are modeled successfully by varying the probabilities that a random walker will move in a given direction as a result of a Coulomb force and the Lorentz force-induced flow of electrolyte past the deposit surface. By contrast, a numerical model which considers only the effect of the Lorentz force on individual ions, without reference to the surface of the growing deposit, produces spiral structures with incorrect chirality. The modified DLA model is related to the differential equations for diffusion, migration, and convection. Length scales in the problem are understood by associating the step length of the random walker with the diffusion layer thickness, the lookup radius with the hydrodynamic boundary layer thickness and a point on the numerical deposit with a nucleation center for growth of a crystallite. PMID:15244565

  10. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  11. Unidirectional Pt silicide nanowires grown on vicinal Si(100)

    NASA Astrophysics Data System (ADS)

    Lim, Do Kyung; Bae, Sung-Soo; Choi, Junghun; Lee, Dohyun; Sung, Da Eun; Kim, Sehun; Kim, J. K.; Yeom, H. W.; Lee, Hangil

    2008-03-01

    We investigated the structure and electronic properties of unidirectional Pt2Si nanowires (NWs) grown on a Si(100)-2° off surface. We found that Pt2Si NWs were formed along the step edges of the Si(100)-2° off surface with c(4×6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt2Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt2Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.

  12. Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

    PubMed Central

    Malashchonak, Mikalai V; Korolik, Olga V; Streltsov, Еugene А; Kulak, Anatoly I

    2015-01-01

    Summary The photoelectrochemical properties of nanoheterostructures based on the wide band gap oxide substrates (ZnO, TiO2, In2O3) and CdS nanoparticles deposited by the successive ionic layer adsorption and reaction (SILAR) method have been studied as a function of the CdS deposition cycle number (N). The incident photon-to-current conversion efficiency (IPCE) passes through a maximum with the increase of N, which is ascribed to the competition between the increase in optical absorption and photocarrier recombination. The maximal IPCE values for the In2O3/CdS and ZnO/CdS heterostructures are attained at N ≈ 20, whereas for TiO2/CdS, the appropriate N value is an order of magnitude higher. The photocurrent and Raman spectroscopy studies of CdS nanoparticles revealed the occurrence of the quantum confinement effect, demonstrating the most rapid weakening with the increase of N in ZnO/CdS heterostructures. The structural disorder of CdS nanoparticles was characterized by the Urbach energy (E U), spectral width of the CdS longitudinal optical (LO) phonon band and the relative intensity of the surface optical (SO) phonon band in the Raman spectra. Maximal values of E U (100–120 meV) correspond to СdS nanoparticles on a In2O3 surface, correlating with the fact that the CdS LO band spectral width and intensity ratio for the CdS SO and LO bands are maximal for In2O3/CdS films. A notable variation in the degree of disorder of CdS nanoparticles is observed only in the initial stages of CdS growth (several tens of deposition cycles), indicating the preservation of the nanocrystalline state of CdS over a wide range of SILAR cycles. PMID:26734517

  13. Characterization of MBE-grown Semiconductor Materials for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Tang, Dinghao

    The research described in this dissertation involved the use of transmission electron microscopy (TEM) to characterize II-VI and III-V compound semiconductor quantum dots (QDs) and dilute-nitride alloys grown by molecular beam epitaxy (MBE) and intended for photovoltaic applications. The morphology of CdTe QDs prepared by the post-annealing MBE method were characterized by various microscopy techniques including high-resolution transmission electron microscopy (HR-TEM), and high-angle annular-dark-field scanning transmission electron microscopy (HAADF-STEM). Extensive observations revealed that the of QD shapes were not well-defined, and the QD size and spatial distribution were not determined by the amount of CdTe deposition. These results indicated that the formation of II-VI QDs using a post-annealing treatment did not follow the conventional growth mechanism for III-V and IV-IV materials. The structural properties of dilute-nitride GaAsNx films grown using plasma-assisted MBE were characterized by TEM and HAADF-STEM. A significant amount of the nitrogen incorporated into the dilute nitride films was found to be interstitial, and that fluctuations in local nitrogen composition also occurred during growth. Post-growth partial relaxation of strain resulted in the formation of {110}-oriented microcracks in the sample with the largest substitutional nitrogen composition. Single- and multi-layered InAs QDs grown on GaAsSb/GaAs composite substrates were investigated using HR-TEM and HAADF-STEM. Correlation between the structural and optoelectronic properties revealed that the GaAsSb barrier layers had played an important role in tuning the energy-band alignments but without affecting the overall structural morphology. However, according to both XRD measurement and electron microscopy the densities of dislocations increased as the number of QD layers built up. An investigation of near-wetting layer-free InAs QDs incorporated with AlAs/GaAs spacer layers was carried out

  14. LYCOPENE CONTENT OF ORGANICALLY GROWN TOMATOES

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Reports on the lycopene content of tomatoes vary widely with country and source of fruit (field, greenhouse, retail). This study was done to compare the lycopene content of organically grown tomatoes, and to compare fully red fruit to those ripened after harvest. Thirteen tomato cultivars (12 beef...

  15. Efflux Of Nitrate From Hydroponically Grown Wheat

    NASA Technical Reports Server (NTRS)

    Huffaker, R. C.; Aslam, M.; Ward, M. R.

    1992-01-01

    Report describes experiments to measure influx, and efflux of nitrate from hydroponically grown wheat seedlings. Ratio between efflux and influx greater in darkness than in light; increased with concentration of nitrate in nutrient solution. On basis of experiments, authors suggest nutrient solution optimized at lowest possible concentration of nitrate.

  16. Grown-ups Ought To Know Better.

    ERIC Educational Resources Information Center

    Brightman, Samuel C.

    Among the articles by Sam Brightman collected in this volume from the newsletter, "Adult & Continuing Education Today (ACET)" are the following: "Grown-Ups Ought to Know Better"; "Adult Education: The Only Sure Factor Is Growth"; "Adult Education Important in This Election Year"; "Will Nursery School External Degree Programs Come Next?";…

  17. Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices

    NASA Astrophysics Data System (ADS)

    Byrappa, Shayan M.

    Silicon Carbide [SiC] which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study: [1] Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defects have been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X-ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for

  18. GaAsP Nanowires Grown by Aerotaxy.

    PubMed

    Metaferia, Wondwosen; Persson, Axel R; Mergenthaler, Kilian; Yang, Fangfang; Zhang, Wei; Yartsev, Arkady; Wallenberg, Reine; Pistol, Mats-Erik; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H

    2016-09-14

    We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires. PMID:27564139

  19. InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  20. Magnesium diffusion profile in GaN grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Benzarti, Z.; Halidou, I.; Bougrioua, Z.; Boufaden, T.; El Jani, B.

    2008-07-01

    The diffusion of magnesium has been studied in GaN layers grown on sapphire substrate by atmospheric pressure metalorganic vapor-phase-epitaxy (MOVPE) in a "home-made" reactor. Secondary Ion Mass Spectroscopy (SIMS) was used to visualise the Mg profiles in two kinds of multi-sublayer GaN structures. One structure was grown with a variable flow of Ga precursor (TMG) and the second one with a variable growth temperature. In both cases, the Mg dopant precursor (Cp 2Mg) flow was kept constant. Using the second Fick's law to fit the experimental SIMS data, we have deduced an increasing then a saturating Mg diffusion coefficient versus the Mg concentration. Mg incorporation was found to get higher for lower growth rate, i.e. when TMG flow is reduced. Furthermore, based on the temperature-related behaviour we have found that the activation energy for Mg diffusion coefficient in GaN was 1.9 eV. It is suggested that Mg diffuses via substitutional sites.

  1. InSb thin films grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Rajaram, P.

    2014-04-01

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl3 and 0.03M SbCl3, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm-1 corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  2. Structural, magnetic, and superconducting properties of pulsed-laser-deposition-grown La1.85 Sr0.15 CuO4 / La2/3 Ca1/3 MnO3 superlattices on (001)-oriented LaSrAlO4 substrates

    DOE PAGESBeta

    Das, S.; Sen, K.; Marozau, I.; Uribe-Laverde, M. A.; Biskup, N.; Varela, M.; Khaydukov, Y.; Soltwedel, O.; Keller, T.; Döbeli, M.; et al

    2014-03-12

    Epimore » taxial La1.85 Sr0.15 CuO4 / La2/3 Ca1/3 MnO3 (LSCO/LCMO) superlattices (SL) on (001)- oriented LaSrAlO4 substrates have been grown with pulsed laser deposition (PLD) technique. Their structural, magnetic and superconducting properties have been determined with in-situ reflection high energy electron diffraction (RHEED), x-ray diffraction, specular neutron reflectometry, scanning transmission electron microscopy (STEM), electric transport, and magnetization measurements. We find that despite the large mismatch between the in-plane lattice parameters of LSCO (a = 0.3779 nm) and LCMO (a = 0.387 nm) these superlattices can be grown epitaxially and with a high crystalline quality. While the first LSCO layer remains clamped to the LSAO substrate, a sizeable strain relaxation occurs already in the first LCMO layer. The following LSCO and LCMO layers adopt a nearly balanced state in which the tensile and compressive strain effects yield alternating in-plane lattice parameters with an almost constant average value. No major defects are observed in the LSCO layers, while a significant number of vertical antiphase boundaries are found in the LCMO layers. The LSCO layers remain superconducting with a relatively high superconducting onset temperature of Tconset ≈ 36 K. The macroscopic superconducting response is also evident in the magnetization data due to a weak diamagnetic signal below 10 K for H ∥ ab and a sizeable paramagnetic shift for H ∥ c that can be explained in terms of a vortex-pinning-induced flux compression. The LCMO layers maintain a strongly ferromagnetic state with a Curie temperature of TCurie ≈ 190 K and a large low-temperature saturation moment of about 3.5 (1) μB. These results suggest that the LSCO/LCMO superlattices can be used to study the interaction between the antagonistic ferromagnetic and superconducting orders and, in combination with previous studies on YBCO/LCMO superlattices, may allow one to identify the relevant

  3. Lethal photosensitization of biofilm-grown bacteria

    NASA Astrophysics Data System (ADS)

    Wilson, Michael

    1997-12-01

    Antibacterial agents are increasingly being used for the prophylaxis and treatment of oral diseases. As these agents can be rendered ineffective by resistance development in the target organisms there is a need to develop alternative antimicrobial approaches. Light-activated antimicrobial agents release singlet oxygen and free radicals which can kill adjacent bacteria and a wide range of cariogenic and periodontopathogenic bacteria has been shown to be susceptible to such agents. In the oral cavity these organisms are present as biofilms (dental plaques) which are less susceptible to traditional antimicrobial agents than bacterial suspensions. The results of these studies have shown that biofilm-grown oral bacteria are also susceptible to lethal photosensitization although the light energy doses required are grater than those needed to kill the organisms when they are grown as aqueous suspensions.

  4. The breakdown of fibrous structures in directionally grown monotectic alloys

    NASA Technical Reports Server (NTRS)

    Grugel, R. N.; Hellawell, A.

    1984-01-01

    The breakdown of aligned steady-state metallic growth products from the reversible monotectic reaction liquid (L1) yields solid (S1) + liquid (L2) is analyzed experimentally. Consideration is given to the temperatures of the monotectic horizontal, to upper consolute temperature of the liquid miscibility gap which through the relative liquid and solid surface energies determines whether the reaction is capable of steady-state growth; the growth characteristics of the solid (faceted or nonfaceted); and the relative whetting characteristics of parent and product phases with the glass cell walls. Schematic drawings and composite photographs are provided which illustrate the development of steady-state growth and the related changes in phase sickness of the reaction product.

  5. Mineral composition of organically grown tomato

    NASA Astrophysics Data System (ADS)

    Ghambashidze, Giorgi

    2014-05-01

    In recent years, consumer concerns on environmental and health issues related to food products have increased and, as a result, the demand for organically grown production has grown. Results indicate that consumers concerned about healthy diet and environmental degradation are the most likely to buy organic food, and are willing to pay a high premium. Therefore, it is important to ensure the quality of the produce, especially for highly consumed products. The tomato (Lycopersicon esculentum) is one of the most widely consumed fresh vegetables in the world. It is also widely used by the food industries as a raw material for the production of derived products such as purees or ketchup. Consequently, many investigations have addressed the impact of plant nutrition on the quality of tomato fruit. The concentrations of minerals (P, Na, K, Ca and Mg) and trace elements (Cu, Zn and Mn) were determined in tomatoes grown organically in East Georgia, Marneuli District. The contents of minerals and Mn seem to be in the range as shown in literature. Cu and Zn were found in considerably high amounts in comparison to maximum permissible values established in Georgia. Some correlations were observed between the minerals and trace elements studied. K and Mg were strongly correlated with Cu and Zn. Statistically significant difference have shown also P, K and Mg based between period of sampling.

  6. Nucleolus in clinostat-grown plants

    SciTech Connect

    Shen-Miller, J.; Dannenhoffer, J. ); Hinchman, R. )

    1991-05-01

    The clinostat is an apparatus that is used to mimic zero gravity in studies of plant growth in the absence of gravitropic response. Clinostat-grown tissue cultures of carrot exhibit significant increases both in the number of nuclei containing more than one nucleolus and in nucleolar volume. Oat seedlings germinated and grown on clinostats exhibit a decreased rate of shoot elongation, increased tissue sensitivity to applied auxin, and an increased response to gravitropic stimulation. Clinostat treatment clearly affects plant metabolism. The nucleolus is the region in the nucleus where ribosome synthesis and assembly take place. The 18S, 5.8S, and 25S ribosomal genes, in tandem units, are located in the nucleolus. Ribosomes orchestrate the production of all proteins that are necessary for the maintenance of cell growth, development, and survival. A full study of the effects of nullification of gravitropism, by clinostat rotation, on nucleolar development in barley has been initiated. The authors study developmental changes of nucleolar number and diameter in clinostat-grown root tissues. Preliminary results show that barley roots exhibit changes in nucleolar number and diameter. Growth rates of barley root and shoot also appear to be reduced, in measurements of both length and weight.

  7. Photocurrent spectroscopy of Ge nanoclusters grown on oxidized silicon surface

    NASA Astrophysics Data System (ADS)

    Mykytiuk, A. A.; Kondratenko, S. V.; Lysenko, V. S.; Kozyrev, Yu. N.

    2014-05-01

    Germanium (Ge) nanoclusters are grown by a molecular-beam epitaxy technique on chemically oxidized Si(100) surface at 700ºC. Evidence for long-term photoinduced changes of surface conductivity in structures with Ge nanoclusters (NCs) grown on silicon oxide is presented. Photoexcitation NCs or Si by quanta with different energy allows observing two non-equilibrium steady-states with excess and shortage of conductivity values as compare to equilibrium one. The persistent photoconductivity (PPC) behaviour was observed after interband excitation of electron-hole pairs in Si(001) substrate. This effect may be attributed to spatial carrier separation of photoexcited electron-hole pairs by macroscopic fields in the depletion layer of near-surface Si. Photoquenching of surface conductivity, driven by optical recharging of Ge NC's and Si/SiO2 interface states, is observed. Conductivity decay is discussed in the terms of hole`s accumulation by Ge-NC states enhancing the local-potential variations and, therefore, decreasing the surface conductivity of p-Si.

  8. Chemical and microstructural characterization of thermally grown alumina scales

    SciTech Connect

    Natesan, K.; Richier, C.; Veal, B.W.

    1995-09-01

    An experimental program has been initiated to evaluate the chemical, microstructural, and mechanical integrity of thermally grown oxide scales to establish requirements for improved corrosion performance in terms of composition, structure, and properties. Iron aluminides of several compositions were selected for the study. Oxidation studies were conducted in air and oxygen environments at 1000{degrees}C. The results showed that the scaling kinetics followed a parabolic rate law but that the rates in early stages of oxidation were significantly greater than in later stages; the difference could be attributed to the presence of fast-growing transient iron oxides in the layer during the early stages. Further, scale failure occurred via gross spallation, scale cracking, and nodule formation and was influenced by alloy composition. Auger electron spectroscopy of Ar-exposed specimens of ternary Fe-Cr-Al alloy showed sulfur on the gas/scale side of the interface; the sulfur decreased as the exposure time increased. Raman spectroscopy and ruby fluorescence were used to examine the scale development as a function of oxidation temperature. Ruby-line shift is used to examine phase transformations in alumina and to calculate compressive strains in thermally grown scales.

  9. Analysis of Phase Separation in Czochralski Grown Single Crystal Ilmenite

    NASA Technical Reports Server (NTRS)

    Wilkins, R.; Powell, Kirk St. A.; Loregnard, Kieron R.; Lin, Sy-Chyi; Muthusami, Jayakumar; Zhou, Feng; Pandey, R. K.; Brown, Geoff; Hawley, M. E.

    1998-01-01

    Ilmenite (FeTiOs) is a wide bandgap semiconductor with an energy gap of 2.58 eV. Ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Single crystal ilmenite has been grown from the melt using the Czochralski method. Growth conditions have a profound effect on the microstructure of the samples. Here we present data from a variety of analytical techniques which indicate that some grown crystals exhibit distinct phase separation during growth. This phase separation is apparent for both post-growth annealed and unannealed samples. Under optical microscopy, there appear two distinct areas forming a matrix with an array of dots on order of 5 pm diameter. While appearing bright in the optical micrograph, atomic force microscope (AFM) shows the dots to be shallow pits on the surface. Magnetic force microscope (MFM) shows the dots to be magnetic. Phase identification via electron microprobe analysis (EMPA) indicates two major phases in the unannealed samples and four in the annealed samples, where the dots appear to be almost pure iron. This is consistent with micrographs taken with a scanning probe microscope used in the magnetic force mode. Samples that do not exhibit the phase separation have little or no discernible magnetic structure detectable by the MFM.

  10. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 7 Agriculture 2 2011-01-01 2011-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  11. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 2 2010-01-01 2010-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  12. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 7 Agriculture 2 2014-01-01 2014-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... (INSPECTION, CERTIFICATION, AND STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long...

  13. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 7 Agriculture 2 2012-01-01 2012-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long stems (commonly termed “rat...

  14. 7 CFR 51.1356 - Pears grown from late blooms.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 7 Agriculture 2 2013-01-01 2013-01-01 false Pears grown from late blooms. 51.1356 Section 51.1356... (INSPECTION, CERTIFICATION, AND STANDARDS) United States Standards for Pears for Canning Definitions § 51.1356 Pears grown from late blooms. Pears grown from late blooms. Such pears often have excessively long...

  15. N-doped graphene natively grown on hierarchical ordered porous carbon for enhanced oxygen reduction.

    PubMed

    Liang, Ji; Du, Xin; Gibson, Christopher; Du, Xi Wen; Qiao, Shi Zhang

    2013-11-20

    A novel nitrogen doped hybrid material composed of in situ-formed graphene natively grown on hierarchical ordered porous carbon is prepared, which successfully combines the advantages of both materials, such as high surface area, high mass transfer, and high conductivity. The outstanding structural properties of the resultant material render it an excellent metal-free catalyst for electrochemical oxygen reduction. PMID:23963824

  16. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    NASA Technical Reports Server (NTRS)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  17. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

    NASA Astrophysics Data System (ADS)

    Dong, Jian-Rong; Teng, Jing-Hua; Chua, Soo-Jin; Foo, Boon-Chin; Wang, Yan-Jun; Yuan, Hai-Rong; Yuan, Shu

    2003-07-01

    Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown using PH3 in terms of optical quality. Finally, AlGaInP MQW red laser structures have been grown, and the electrically pumped AlGaInP red lasers grown by TBP have been demonstrated with the emission wavelength of 647 nm, indicating that TBP can be used to grow high-quality AlGaInP epilayers and AlGaInP-based red lasers, which presently is dominated by the highly toxic gas source PH3.

  18. High resolution synchrotron X-radiation diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals

    NASA Technical Reports Server (NTRS)

    Steiner, Bruce; Dobbyn, Ronald C.; Black, David; Burdette, Harold; Kuriyama, Masao; Fripp, Archibald; Simchik, Richard

    1991-01-01

    Irregularities in three crystals grown in space and in four terrestrial crystals grown under otherwise comparable conditions have been observed in high resolution diffraction imaging. The images provide important new clues to the nature and origins of irregularities in each crystal. For two of the materials, mercuric iodide and lead tin telluride, more than one phase (an array of non-diffracting inclusions) was observed in terrestrial samples; but the formation of these multiple phases appears to have been suppressed in directly comparable crystals grown in microgravity. The terrestrial seed crystal of triglycine sulfate displayed an unexpected layered structure, which propagated during directly comparable space growth. Terrestrial Bridgman regrowth of gallium arsenide revealed a mesoscopic structure substantially different from that of the original Czochralski material. A directly comparable crystal is to be grown shortly in space.

  19. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  20. Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer

    NASA Astrophysics Data System (ADS)

    Morel, P. H.; Haberfehlner, G.; Lafond, D.; Audoit, G.; Jousseaume, V.; Leroux, C.; Fayolle-Lecocq, M.; Baron, T.; Ernst, T.

    2012-08-01

    We report the fabrication and the characterization of chemical vapor deposition (CVD) grown silicon nanowires capacitors using a complementary-metal-oxide-semiconductor (CMOS) circuit interconnect level compatible process. Silicon nanowires have been grown by CVD on metallic interconnect lines used in today's CMOS circuits at low temperature (<425 °C) and using copper as catalyst. The nanowire assembly develops a huge surface leading to very high measured capacitance densities reaching 18 μF/cm2, and featuring a ×23 gain when compared to the same structure without nanowires. This opens the path toward embedded capacitances technologies by using bottom-up nanowires.