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Sample records for multilevel metallization interconnection

  1. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1989-03-21

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration. 6 figs.

  2. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, David B.

    1987-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  3. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, David B.

    1989-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  4. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-08-23

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  5. Planarization of metal films for multilevel interconnects

    DOEpatents

    Tuckerman, D.B.

    1985-06-24

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping lase pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  6. Planarization of metal films for multilevel interconnects by pulsed laser heating

    DOEpatents

    Tuckerman, David B.

    1987-01-01

    In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small increments. The planarization of each metal layer eliminates irregular and discontinuous conditions between successive layers. The planarization method is particularly applicable to circuits having ground or power planes and allows for multilevel interconnects. Dielectric layers can also be planarized to produce a fully planar multilevel interconnect structure. The method is useful for the fabrication of VLSI circuits, particularly for wafer-scale integration.

  7. Development and characterization of multilevel metal interconnection etch process

    NASA Astrophysics Data System (ADS)

    Dang, Kim

    1997-08-01

    A more robust chlorine chemistry based reactive ion etch (RIE) process was developed, characterized and optimized to anisotropically etch the interconnecting metal layers for use in the fabrication of CMOS and BiCMOS IC devices, using the Lam 4600 single wafer etcher. The titanium nitride and titanium silicide buried layer, used in the metal 1 structure, present unique constraints on etch selectivity to the underlying film. The process must clear metal stringers with minimal lateral etching of the aluminum during the tiN/Ti etch and overetch steps. The new optimized process meets all requirements imposed by advanced technologies, such as vertical metal sidewalls, wide process latitude, tight CD control, minimal of TEOS oxide underlayer, less sensitivity to photoresist pattern, excellent reliability and reproducibility, and lower level of polymer (reaction by- product) build-up in reactor chamber which could lead to metal corrosion and cluster defects.

  8. A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application

    NASA Astrophysics Data System (ADS)

    Chen, Chung-Hui; Fang, Yean-Kuen; Lin, Chun-Sheng; Yang, Chih-Wei; Hsieh, Jang-Cheng

    2001-01-01

    In this letter, a novel multi-level interconnect scheme with air as the low K inter-metal dielectric for ultra large scale integrated circuit (ULSI) application in ultradeep submicron (UDSM) range is proposed. The detailed process integration with copper dual damascene processing is described. The feasibility of the scheme is examined by trimethylaluminum Raphael simulation for the effective dielectric constant and the cutoff frequency in a standard divide by three counter. The simulation results are also compared with these reported air gap formation technologies. The results show the developed multi-level interconnect system is suitable for UDSM application.

  9. The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

    NASA Technical Reports Server (NTRS)

    Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

    1979-01-01

    The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

  10. Multilevel metallization method for fabricating a metal oxide semiconductor device

    NASA Technical Reports Server (NTRS)

    Hollis, B. R., Jr.; Feltner, W. R.; Bouldin, D. L.; Routh, D. E. (Inventor)

    1978-01-01

    An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

  11. Copper metallization for on-chip interconnects

    NASA Astrophysics Data System (ADS)

    Gelatos, A. V.; Nguyen, Bich-Yen; Perry, Kathleen A.; Marsh, R.; Peschke, J.; Filipiak, Stanley M.; Travis, Edward O.; Thompson, Matthew A.; Saaranen, T.; Tobin, Phil J.; Mogab, C. J.

    1996-09-01

    interconnects and multilevel metal structures with reliability significantly better than that of aluminum. This article describes our efforts to integrate copper in the backend of integrated circuits. The first part deals with the chemical vapor deposition (CVD) of copper films. The second describes the integration of copper into the last metal level of a 2-level metal 0.5um BiCMOS SRAM circuit.

  12. Durability of Metallic Interconnects and Protective Coatings

    SciTech Connect

    Yang, Zhenguo; Stevenson, Jeffry W.

    2009-12-15

    To build up a useful voltage, a number of solid oxide fuel cells (SOFCs) are electrically connected into series in a stack via interconnects, which are placed between adjacent cells. In addition to functioning as a bi-polar electrical connector, the interconnect also acts as a separator plate that separates the fuel at the anode side of one cell from the air at the cathode side on an adjacent cell. During SOFC operation at the high temperatures, the interconnects are thus simultaneously exposed to the oxidizing air at one side and a reducing fuel that can be either hydrogen or hydrocarbon at the other. Besides, they are in contact with adjacent components, such as electrodes or electrical contacts, seals, etc. With steady reduction in SOFC operating temperatures into the low or intermediate range 600-850oC, oxidation resistant alloys are often used to construct interconnects. However, the metallic interconnects may degrade via interactions at their interfaces with surrounding environments or adjacent components, potentially affecting the stability and performance of interconnects and the SOFC stacks. Thus protection layers are applied to metallic interconnects that also intend to mitigate or prevent chromium migration into cells and the cell poisoning. This chapter provides a comprehensive review of materials for metallic interconnects, their degradation and coating protection.

  13. Laser printing of 3D metallic interconnects

    NASA Astrophysics Data System (ADS)

    Beniam, Iyoel; Mathews, Scott A.; Charipar, Nicholas A.; Auyeung, Raymond C. Y.; Piqué, Alberto

    2016-04-01

    The use of laser-induced forward transfer (LIFT) techniques for the printing of functional materials has been demonstrated for numerous applications. The printing gives rise to patterns, which can be used to fabricate planar interconnects. More recently, various groups have demonstrated electrical interconnects from laser-printed 3D structures. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or of pastes containing dispersed metallic particles. However, the generated 3D structures do not posses the same metallic conductivity as a bulk metal interconnect of the same cross-section and length as those formed by wire bonding or tab welding. An alternative is to laser transfer entire 3D structures using a technique known as lase-and-place. Lase-and-place is a LIFT process whereby whole components and parts can be transferred from a donor substrate onto a desired location with one single laser pulse. This paper will describe the use of LIFT to laser print freestanding, solid metal foils or beams precisely over the contact pads of discrete devices to interconnect them into fully functional circuits. Furthermore, this paper will also show how the same laser can be used to bend or fold the bulk metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief for the circuits under flexing or during motion from thermal mismatch. These interconnect "ridges" can span wide gaps (on the order of a millimeter) and accommodate height differences of tens of microns between adjacent devices. Examples of these laser printed 3D metallic bridges and their role in the development of next generation electronics by additive manufacturing will be presented.

  14. Recent Development of SOFC Metallic Interconnect

    SciTech Connect

    Wu JW, Liu XB

    2010-04-01

    Interest in solid oxide fuel cells (SOFC) stems from their higher e±ciencies and lower levels of emitted pollu- tants, compared to traditional power production methods. Interconnects are a critical part in SOFC stacks, which connect cells in series electrically, and also separate air or oxygen at the cathode side from fuel at the anode side. Therefore, the requirements of interconnects are the most demanding, i:e:, to maintain high elec- trical conductivity, good stability in both reducing and oxidizing atmospheres, and close coe±cient of thermal expansion (CTE) match and good compatibility with other SOFC ceramic components. The paper reviewed the interconnect materials, and coatings for metallic interconnect materials.

  15. Metallic Nanowire Interconnections for Integrated Circuit Fabrication

    NASA Technical Reports Server (NTRS)

    Ng, Hou Tee (Inventor); Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2007-01-01

    A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic precursor of a metal nanowire (MeNW) is provided around the catalyst array, and MeNWs grow between the conductive layer and the catalyst array. The catalyst array and a portion of each of the MeNWs are removed to provide exposed ends of the MeNWs.

  16. The metal interconnected cascade solar cell

    SciTech Connect

    LaRue, R.A.; Borden, P.G.; Dietze, W.T.; Gregory, P.E.; Ludowise, M.J.

    1982-09-01

    A cascade cell employing a new type of interconnect is described. It uses a groove etch and metallization process to connect the base of the top cell to the emitter of the bottom cell. The best cell yielded 21.3% efficiency under conditions of AM3, 130 suns, 50/sup 0/C, with the result not corrected for grid coverage. Other features include a 1.2-micron thick 1.82-eV ALGaAs top cell with a BSF under the base and an n/p heteroface GaAs bottom cell that is stable during top cell growth.

  17. Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

    NASA Technical Reports Server (NTRS)

    Routh, D. E.; Sharma, G. C. (Inventor)

    1982-01-01

    The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

  18. Clad metals, roll bonding and their applications for SOFC interconnects

    NASA Astrophysics Data System (ADS)

    Chen, Lichun; Yang, Zhenguo; Jha, Bijendra; Xia, Guanguang; Stevenson, Jeffry W.

    Metallic interconnects have been becoming an increasingly interesting topic in the development in intermediate temperature solid oxide fuel cells (SOFC). High temperature oxidation resistant alloys are currently considered as candidate materials. Among these alloys however, different groups of alloys demonstrate different advantages and disadvantages, and few if any can completely satisfy the stringent requirements for the application. To integrate the advantages and avoid the disadvantages of different groups of alloys, clad metal has been proposed for SOFC interconnect applications and interconnect structures. This paper gives a brief overview of the cladding approach and its applications, and discuss the viability of this technology to fabricate the metallic layered-structure interconnects. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL 453 were selected as examples and manufactured into a clad metal. Its suitability as an interconnect construction material was investigated.

  19. Clad metals by roll bonding for SOFC interconnects

    SciTech Connect

    Chen, L.; Jha, B; Yang, Z Gary; Xia, Gordon; Stevenson, Jeffry W.; Singh, Prabhakar

    2006-08-01

    Metallic interconnects have been becoming an increasingly interesting topic in the development in intermediate temperature solid oxide fuel cells (SOFC). High temperature oxidation resistant alloys are currently considered as candidate materials. Among these alloys however, different groups of alloys demonstrate different advantages and disadvantages, and few if any can completely satisfy the stringent requirements for the application. To integrate the advantages and avoid the disadvantages of different groups of alloys, clad metal has been proposed for SOFC interconnect applications and interconnect structures. This paper gives a brief overview of the cladding approach and its applications, and discuss the viability of this technology to fabricate the metallic layered-structure interconnects. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL 453 were selected as examples and manufactured into a clad metal. Its suitability as an interconnect construction material was investigated.

  20. Clad Metals, Roll Bonding and their Applications for SOFC Interconnects

    SciTech Connect

    Chen, L.; Yang, Zhenguo; Jha, B.; Xia, Guanguang; Stevenson, Jeffry W.

    2005-12-01

    High temperature oxidation resistant alloys are currently considered as candidate materials for construction of interconnects in intermediate temperature SOFCs. Among these alloys however, different groups of alloys demonstrate different advantages and disadvantages for the interconnect applications, and few if any can completely satisfied the stringent requirements for the applications. To integrate the advantages and avoid the disadvantages of different groups of alloys, cladding has been proposed as the approach to fabricate metallic layered interconnect structures. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL453 were selected as examples and manufactured into a clad metal. It’s suitability as interconnect construction materials were investigated. This paper will give a brief overview of the cladding approach and discuss the viability of this technology to fabricate the metallic layered-structure interconnects.

  1. Clad metals by roll bonding for SOFC interconnects

    NASA Astrophysics Data System (ADS)

    Chen, L.; Jha, B.; Yang, Zhenguo; Xia, Guang-Guang; Stevenson, Jeffry W.; Singh, Prabhakar

    2006-08-01

    High-temperature oxidation-resistant alloys are currently considered as a candidate material for construction of interconnects in intermediate-temperature solid oxide fuel cells. Among these alloys, however, different groups of alloys demonstrate different advantages and disadvantages, and few, if any, can completely satisfy the stringent requirements for the application. To integrate the advantages and avoid the disadvantages of different groups of alloys, cladding has been proposed as one approach in fabricating metallic layered interconnect structures. To examine the feasibility of this approach, the austenitic Ni-base alloy Haynes 230 and the ferritic stainless steel AL 453 were selected as examples and manufactured into a clad metal. Its suitability as an interconnect construction material was investigated. This paper provides a brief overview of the cladding approach and discusses the viability of this technology to fabricate the metallic layered-structure interconnects.

  2. Metal complex modified azo polymers for multilevel organic memories

    NASA Astrophysics Data System (ADS)

    Ma, Yong; Chen, Hong-Xia; Zhou, Feng; Li, Hua; Dong, Huilong; Li, You-Yong; Hu, Zhi-Jun; Xu, Qing-Feng; Lu, Jian-Mei

    2015-04-01

    Multilevel organic memories have attracted considerable interest due to their high capacity of data storage. Despite advances, the search for multilevel memory materials still remains a formidable challenge. Herein, we present a rational design and synthesis of a class of polymers containing an azobenzene-pyridine group (PAzo-py) and its derivatives, for multilevel organic memory storage. In this design, a metal complex (M(Phen)Cl2, M = Cu, Pd) is employed to modify the HOMO-LUMO energy levels of azo polymers, thereby converting the memory state from binary to ternary. More importantly, this approach enables modulating the energy levels of azo polymers by varying the coordination metal ions. This makes the achievement of high performance multilevel memories possible. The ability to tune the bandgap energy of azo polymers provides new exciting opportunities to develop new materials for high-density data storage.Multilevel organic memories have attracted considerable interest due to their high capacity of data storage. Despite advances, the search for multilevel memory materials still remains a formidable challenge. Herein, we present a rational design and synthesis of a class of polymers containing an azobenzene-pyridine group (PAzo-py) and its derivatives, for multilevel organic memory storage. In this design, a metal complex (M(Phen)Cl2, M = Cu, Pd) is employed to modify the HOMO-LUMO energy levels of azo polymers, thereby converting the memory state from binary to ternary. More importantly, this approach enables modulating the energy levels of azo polymers by varying the coordination metal ions. This makes the achievement of high performance multilevel memories possible. The ability to tune the bandgap energy of azo polymers provides new exciting opportunities to develop new materials for high-density data storage. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00871a

  3. Ultralight Interconnected Metal Oxide Nanotube Networks.

    PubMed

    Stano, Kelly L; Faraji, Shaghayegh; Hodges, Ryan; Yildiz, Ozkan; Wells, Brian; Akyildiz, Halil I; Zhao, Junjie; Jur, Jesse; Bradford, Philip D

    2016-05-01

    Record-breaking ultralow density aluminum oxide structures are prepared using a novel templating technique. The alumina structures are unique in that they are comprised by highly aligned and interconnected nanotubes yielding anisotropic behavior. Large-scale network structures with complex form-factors can easily be made using this technique. The application of the low density networks as humidity sensing materials as well as thermal insulation is demonstrated. PMID:26969860

  4. Maskless laser writing of microscopic metallic interconnects

    DOEpatents

    Maya, L.

    1995-10-17

    A method of forming a metal pattern on a substrate is disclosed. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern. 4 figs.

  5. Maskless laser writing of microscopic metallic interconnects

    DOEpatents

    Maya, Leon

    1995-01-01

    A method of forming a metal pattern on a substrate. The method includes depositing an insulative nitride film on a substrate and irradiating a laser beam onto the nitride film, thus decomposing the metal nitride into a metal constituent and a gaseous constituent, the metal constituent remaining in the nitride film as a conductive pattern.

  6. Scaling of Metal Interconnects: Challenges to Functionality and Reliability

    SciTech Connect

    Engelhardt, M.; Schindler, G.; Traving, M.; Stich, A.; Gabric, Z.; Pamler, W.; Hoenlein, W.

    2006-02-07

    Copper-based nano interconnects featuring CDs well beyond today's chip generations and air gap structures were fabricated and subjected to electrical characterization and tests to get already today insight on functionality and reliability aspects of metallization schemes in future semiconductor products. Size effects observed already in today's advanced products will definitely limit the resistivity in future interconnects. Copper diffusion barrier layers were scaled down to the 1nm regime of thicknesses without observable degradation effects regarding adhesion properties and functionality. Interconnect reliability was found to decrease with decreasing barrier thickness. Worst results regarding adhesion properties and interconnect reliability were obtained for vanishing barrier thickness which promotes unrestricted mass flow of copper along the interconnect line. Air gaps were developed and characterized as an alternative approach to porous ultra low-k materials. They allowed the realization of effective k-values of the insulation of 2.4, which meet requirements of chip generations far in the future, while avoiding the integration issues associated with these soft materials. First reliability results obtained with air gaps are comparable with those obtained on full structures. Whereas leakage current behavior with electrical field strength expected to be present between neighboring lines in chip generations during the next 10 years were similar for air gaps and oxide, interconnects insulated by air gaps displayed lower breakdown fields than those insulated by oxide.

  7. Corrosion of Metallic SOFC Interconnects in Coal Syngas

    SciTech Connect

    Dastane, R.R.; Liu, X.; Johnson, C., Mao, Scott

    2007-09-01

    With recent reductions in the operating temperature of Solid Oxide Fuel Cells (SOFC), the potential of using metallic interconnect has gone up. There is also an interest in using Coal syngas as the fuel gas and thus there is a need to analyze the behavior and performance of metallic interconnects when exposed to Coal syngas. Three high temperature material alloys, Crofer 22 APU, Ebrite and Haynes 230, having the potential to be used as SOFC interconnects were studied in simulated wet coal syngas. These alloys were exposed to syngas at 800 degrees C and for 100 hours. The exposure to coal syngas led to the formation of oxides and spinels, which evidently led to an increase in electrical resistance. Oxidation in a reducing and carburizing environment leads to unique phase and morphology formations. A comparative analysis was carried out for all the three alloys, wherein the samples were characterized by using SEM, EDS, Raman and X-Ray diffraction to obtain the morphology, thickness, composition and crystal structure of the oxides and spinels

  8. Interconnected hollow carbon nanospheres for stable lithium metal anodes.

    PubMed

    Zheng, Guangyuan; Lee, Seok Woo; Liang, Zheng; Lee, Hyun-Wook; Yan, Kai; Yao, Hongbin; Wang, Haotian; Li, Weiyang; Chu, Steven; Cui, Yi

    2014-08-01

    For future applications in portable electronics, electric vehicles and grid storage, batteries with higher energy storage density than existing lithium ion batteries need to be developed. Recent efforts in this direction have focused on high-capacity electrode materials such as lithium metal, silicon and tin as anodes, and sulphur and oxygen as cathodes. Lithium metal would be the optimal choice as an anode material, because it has the highest specific capacity (3,860 mAh g(-1)) and the lowest anode potential of all. However, the lithium anode forms dendritic and mossy metal deposits, leading to serious safety concerns and low Coulombic efficiency during charge/discharge cycles. Although advanced characterization techniques have helped shed light on the lithium growth process, effective strategies to improve lithium metal anode cycling remain elusive. Here, we show that coating the lithium metal anode with a monolayer of interconnected amorphous hollow carbon nanospheres helps isolate the lithium metal depositions and facilitates the formation of a stable solid electrolyte interphase. We show that lithium dendrites do not form up to a practical current density of 1 mA cm(-2). The Coulombic efficiency improves to ∼ 99% for more than 150 cycles. This is significantly better than the bare unmodified samples, which usually show rapid Coulombic efficiency decay in fewer than 100 cycles. Our results indicate that nanoscale interfacial engineering could be a promising strategy to tackle the intrinsic problems of lithium metal anodes. PMID:25064396

  9. Interconnected hollow carbon nanospheres for stable lithium metal anodes

    NASA Astrophysics Data System (ADS)

    Zheng, Guangyuan; Lee, Seok Woo; Liang, Zheng; Lee, Hyun-Wook; Yan, Kai; Yao, Hongbin; Wang, Haotian; Li, Weiyang; Chu, Steven; Cui, Yi

    2014-08-01

    For future applications in portable electronics, electric vehicles and grid storage, batteries with higher energy storage density than existing lithium ion batteries need to be developed. Recent efforts in this direction have focused on high-capacity electrode materials such as lithium metal, silicon and tin as anodes, and sulphur and oxygen as cathodes. Lithium metal would be the optimal choice as an anode material, because it has the highest specific capacity (3,860 mAh g-1) and the lowest anode potential of all. However, the lithium anode forms dendritic and mossy metal deposits, leading to serious safety concerns and low Coulombic efficiency during charge/discharge cycles. Although advanced characterization techniques have helped shed light on the lithium growth process, effective strategies to improve lithium metal anode cycling remain elusive. Here, we show that coating the lithium metal anode with a monolayer of interconnected amorphous hollow carbon nanospheres helps isolate the lithium metal depositions and facilitates the formation of a stable solid electrolyte interphase. We show that lithium dendrites do not form up to a practical current density of 1 mA cm-2. The Coulombic efficiency improves to ˜99% for more than 150 cycles. This is significantly better than the bare unmodified samples, which usually show rapid Coulombic efficiency decay in fewer than 100 cycles. Our results indicate that nanoscale interfacial engineering could be a promising strategy to tackle the intrinsic problems of lithium metal anodes.

  10. A metallic interconnect for a solid oxide fuel cell stack

    NASA Astrophysics Data System (ADS)

    England, Diane Mildred

    A solid oxide fuel cell (SOFC) electrochemically converts the chemical energy of reaction into electrical energy. The commercial success of planar, SOFC stack technology has a number of challenges, one of which is the interconnect that electrically and physically connects the cathode of one cell to the anode of an adjacent cell in the SOFC stack and in addition, separates the anodic and cathodic gases. An SOFC stack operating at intermediate temperatures, between 600°C and 800°C, can utilize a metallic alloy as an interconnect material. Since the interconnect of an SOFC stack must operate in both air and fuel environments, the oxidation kinetics, adherence and electronic resistance of the oxide scales formed on commercial alloys were investigated in air and wet hydrogen under thermal cycling conditions to 800°C. The alloy, Haynes 230, exhibited the slowest oxidation kinetics and the lowest area-specific resistance as a function of oxidation time of all the alloys in air at 800°C. However, the area-specific resistance of the oxide scale formed on Haynes 230 in wet hydrogen was unacceptably high after only 500 hours of oxidation, which was attributed to the high resistivity of Cr2O3 in a reducing atmosphere. A study of the electrical conductivity of the minor phase manganese chromite, MnXCr3-XO4, in the oxide scale of Haynes 230, revealed that a composition closer to Mn2CrO4 had significantly higher electrical conductivity than that closer to MnCr 2O4. Haynes 230 was coated with Mn to form a phase closer to the Mn2CrO4 composition for application on the fuel side of the interconnect. U.S. Patent No. 6,054,231 is pending. Although coating a metallic alloy is inexpensive, the stringent economic requirements of SOFC stack technology required an alloy without coating for production applications. As no commercially available alloy, among the 41 alloys investigated, performed to the specifications required, a new alloy was created and designated DME-A2. The oxide scale

  11. Design methodology of focusing elements for multilevel planar optical systems in optical interconnects

    NASA Astrophysics Data System (ADS)

    Al Hafiz, Md. Abdullah; MacKenzie, Mark R.; Kwok, Chee-Yee

    2009-12-01

    We present a simple technique to determine the design parameters of an optical interconnect system that uses integral planar lenses. The technique is based on the ABCD transformation matrix method. This analysis technique is significantly simpler and more efficient than the previously published methods for finding the design parameters and predicting the coupling efficiency of the system. The proposed method is applied to compute the coupling efficiency of single- and two-level optical systems.

  12. Fabrication and characterization of metal-to-metal interconnect structures for 3-D integration

    NASA Astrophysics Data System (ADS)

    Huffman, Alan; Lannon, John; Lueck, Matthew; Gregory, Christopher; Temple, Dorota

    2009-03-01

    The use of collapsible (solder) bump interconnects in pixel detector hybridization has been shown to be very successful. However, as pixel sizes decrease, the use of non-collapsible metal-to-metal bump bonding methods is needed to push the interconnect dimensions smaller. Furthermore, these interconnects are compatible with 3D intgration technologies which are being considered to increase overall pixel and system performance. These metal-to-metal bonding structures provide robust mechanical and electrical connections and allow for a dramatic increase in pixel density. Of particular interest are Cu-Cu thermocompression bonding and Cu/Sn-Cu solid-liquid diffusion bonding processes. Working with Fermilab, RTI undertook a demonstration to show that these bump structures could be reliably used to interconnect devices designed with 20 micron I/O pitch. Cu and Cu/Sn bump fabrication processes were developed to provide a well-controlled surface topography necessary for the formation of low resistance, high yielding, and reliable interconnects. The electrical resistance and yield has been quantified based on electrical measurements of daisy chain test structures and the mechanical strength of the bonding has been quantified through die shear testing. The reliability has been characterized through studies of the impact of thermal exposure on the mechanical performance of the bonds. Cross-section SEM analysis, coupled with high resolution energy dispersive spectroscopy, has provided insight into the physical and chemical nature of the bonding interfaces and aided in the evaluation of the long-term stability of the bonds.

  13. ELECTRICAL CONTACTS BETWEEN CATHODES AND METALLIC INTERCONNECTS IN SOLID OXIDE FUEL CELLS

    SciTech Connect

    Yang, Zhenguo; Xia, Guanguang; Stevenson, Jeffry W.

    2005-11-28

    To minimize electrical resistance and maximize power output, contact layers are often applied between interconnects and electrodes during construction of a SOFC stack. In this work, simulated cathode/interconnect structures were used to investigate the effects of different contact materials on the contact resistance between a LSF cathode and a Crofer22 APU interconnect. The results from the resistance measurements are reported and correlated to interfacial interactions occurring between the metallic interconnect and the contact materials, particularly perovskites. The materials requirements for the contact layers between cathodes and metallic interconnects in intermediate temperature SOFCs are also discussed.

  14. Fabrication of Ultralow Density Interconnected Pure Metal Foams

    NASA Astrophysics Data System (ADS)

    Burks, Edward C.; Gilbert, Dustin A.; Liu, Kai; Kucheyev, Sergei O.; Colvin, Jeffrey D.; Felter, Thomas E.

    Ultra-low density metallic nanostructures have been shown to possess interesting thermal, electrical, magnetic, chemical and mechanical properties due to their extremely high surface areas, nanoscale geometries and high porosities. Here we report the synthesis of pure metal foams using interconnected metallic nanowires with densities as low as 0.1% of their bulk density that are still mechanically stable. The highly porous monoliths are macroscopic in size (several mm) and can be created in a wide variety of shapes for application-specific needs. Preliminary studies of such metal foams have already revealed fascinating mechanical and magnetic properties, since the physical dimensions of the foams are below some of the basic length scales that govern the material properties. These foams have been used as targets for ultrabright x-ray sources. They also have a wide variety of other potential applications such as photovoltaic devices, supercapacitors, catalysts, coatings, fuel cells, etc. This work has been supported by DTRA #BRCALL08-Per3-C-2-0006, and in part by NSF DMR-1008791 and DMR-1543582. Work at LLNL was performed under the auspices of the U.S. DOE by LLNL under Contract DE-AC52-07NA27344.

  15. Dual-environment effects on the oxidation of metallic interconnects

    SciTech Connect

    Holcomb, G.R.; Ziomek-Moroz, M.; Covino, B.S., Jr.; Bullard, S.J.

    2006-08-01

    Metallic interconnects in solid oxide fuel cells are exposed to a dual environment: fuel on one side (i.e., H2 gas) and oxidizer on the other side (i.e., air). It has been observed that the oxidation behavior of thin stainless steel sheet in air is changed by the presence of H2 on the other side of the sheet. The resulting dual-environment scales are flaky and more friable than the single-environment scales. The H2 disrupts the scale on the air side. A model to explain some of the effects of a dual environment is presented where hydrogen diffusing through the stainless steel sheet reacts with oxygen diffusing through the scale to form water vapor, which has sufficient vapor pressure to mechanically disrupt the scale. Experiments on preoxidized 316L stainless steel tubing exposed to air-air, H2-air, and H2-Ar environments are reported in support of the model.

  16. Multi-level single mode 2D polymer waveguide optical interconnects using nano-imprint lithography.

    PubMed

    Khan, Muhammad Umar; Justice, John; Petäjä, Jarno; Korhonen, Tia; Boersma, Arjen; Wiegersma, Sjoukje; Karppinen, Mikko; Corbett, Brian

    2015-06-01

    Single and multi-layer passive optical interconnects using single mode polymer waveguides are demonstrated using UV nano-imprint lithography. The fabrication tolerances associated with imprint lithography are investigated and we show a way to experimentally quantify a small variation in index contrast between core and cladding of fabricated devices. 1x2 splitting devices based on directional couplers and multimode interference interferometers are demonstrated to have less than 0.45 dB insertion loss with 0.02 ± 0.01 dB power imbalance between the outputs. We demonstrate an 'optical via' with an insertion loss less than 0.45 dB to transfer light from one optical signal plane to another. A 1x4 two-dimensional optical port is experimentally demonstrated to spatially split the input power with an insertion loss of 1.2 dB. PMID:26072823

  17. Modification of low dielectric constant materials for ULSI multilevel interconnection by ion implantation

    NASA Astrophysics Data System (ADS)

    Roy, Alok Nandini Usha

    As integrated circuit (IC) dimensions continue to decrease, RC delay, cross-talk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Low dielectric constant materials are being introduced and developed to replace silicon dioxide as inter level dielectrics into current interconnect technologies to meet RC delay goals and minimize cross-talk. These low kappa films generally have dielectric constants less than 3 (vs. 4 for silicon dioxide) and very poor mechanical strength. The elastic modulus (E) of the low kappa film is typically less than 10Gpa, compared with 70Gpa for SiO2. The poor mechanical strength of the low kappa dielectric films increases the risk of thermo-mechanical failures within the Cu/low kappa interconnect structure; e.g. thin film delamination and cracking. Maintaining the mechanical integrity of the low kappa films with the stresses of fab processing, packaging and reliability testing has proven challenging. Therefore, surface hardening is necessary to withstand processing (e.g. CMP). This research work will address the methods to enhance the mechanical strength of low dielectric films. Results of two classes of material (i.e. Xerogel (porous) and methyl silsesquioxane (MSQ (organic)) are discussed. Thin films of Ultra-Low kappa materials such as Xerogel (kappa = 1.76) and porous MSQ (kappa = 2.2) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm-2 and 1 x 1016 cm-2 dose at energies varying from 20 to 150 keV at room temperature. In this work we showed that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 x 10 16 cm-2 doses at 50 keV, sacrificing only a slight increase (˜15%) in dielectric constant (e.g., from 1.76 to 2.0). The hardness persists after 450°C annealing. The ion implantation process suppressed the moisture uptake in the porous low

  18. Tight Interconnection and Multi-Level Control of Arabidopsis MYB44 in MAPK Cascade Signalling

    PubMed Central

    2013-01-01

    Abiotic stress poses a huge, ever-increasing problem to plants and agriculture. The dissection of signalling pathways mediating stress tolerance is a prerequisite to develop more resistant plant species. Mitogen-activated protein kinase (MAPK) cascades are universal signalling modules. In Arabidopsis, the MAPK MPK3 and its upstream regulator MAPK kinase MKK4 initiate the adaptation response to numerous abiotic and biotic stresses. Yet, molecular steps directly linked with MKK4 – MPK3 activation are largely unknown. Starting with a yeast-two-hybrid screen for interacting partners of MKK4, we identified a transcription factor, MYB44. MYB44 is controlled at multiple levels by and strongly inter-connected with MAPK signalling. As we had shown earlier, stress-induced expression of the MYB44 gene is regulated by a MPK3-targeted bZIP transcription factor VIP1. At the protein level, MYB44 interacts with MPK3 in vivo. MYB44 is phosphorylated by MPK3 in vitro at a single residue, Ser145. Although replacement of Ser145 by a non-phosphorylatable (S145A) or phosphomimetic (S145D) residue did not alter MYB44 subcellular localisation, dimerization behaviour nor DNA-binding characteristics, abiotic stress tolerance tests in stable transgenic Arabidopsis plants clearly related S145 phosphorylation to MYB44 function: Compared to Arabidopsis wild type plants, MYB44 overexpressing lines exhibit an enhanced tolerance to osmotic stress and are slightly more sensitive to abscisic acid. Interestingly, overexpression of the S145A variant revealed that impaired phosphorylation does not render the MYB44 protein non-functional. Instead, S145A lines are highly sensitive to abiotic stress, and thereby remarkably similar to mpk3-deficient plants. Its in vivo interaction with the nuclear sub-pools of both MPK3 and MKK4 renders MYB44 the first plant transcription factor to have a second function as putative MAPK cascade scaffolding protein. PMID:23437396

  19. Laser nanolithography and chemical metalization for the manufacturing of 3D metallic interconnects

    NASA Astrophysics Data System (ADS)

    Jonavičius, Tomas; RekštytÄ--, Sima; Žukauskas, Albertas; Malinauskas, Mangirdas

    2014-03-01

    We present a developed method based on direct laser writing (DLW) and chemical metallization (CM) for microfabrication of three-dimensional (3D) metallic structures. Such approach enables manufacturing of free­-form electro conductive interconnects which can be used in integrated electric circuits such micro-opto-electro mechanical systems (MOEMS). The proposed technique employing ultrafast high repetition rate laser enables efficient fabrication of 3D microstructures on dielectric as well as conductive substrates. The produced polymer links out of organic-inorganic composite matrix after CM serve as interconnects of separate metallic contacts, their dimensions are: height 15μm, width 5μm, length 35-45 μm and could provide 300 nΩm resistivity measured in a macroscopic way. This proves the techniques potential for creating integrated 3D electric circuits at microscale.

  20. Dual Environment Effects on the Oxidation of Metallic Interconnects

    SciTech Connect

    Holcomb, Gordon R.; Ziomek-Moroz, Malgorzata; Cramer, Stephen D.; Covino, Jr., Bernard S.; and Bullard, Sophie J.

    2004-10-20

    Metallic interconnects in solid oxide fuel cells are exposed to a dual environment: fuel on one side (i.e. H2 gas) and oxidizer on the other side (i.e. air). It has been observed that the oxidation behavior of thin stainless steel sheet in air is changed by the presence of H2 on the other side of the sheet. The resulting dual environment scales are flaky and more friable than the single environment scales. The H2 disrupts the scale on the air-side. A model to explain some of the effects of a dual environment is presented where hydrogen diffusing through the stainless steel sheet reacts with oxygen diffusing through the scale to form water vapor, which has sufficient vapor pressure to mechanically disrupt the scale. Experiments on preoxidized 316L stainless steel tubing exposed to air/air, H2/air, and H2/Ar environments are reported in support of the model.

  1. Study of metallic materials for solid oxide fuel cell interconnect applications.

    SciTech Connect

    Natesan, K.; Zeng, Z.; Nuclear Engineering Division

    2009-04-24

    Metallic interconnect acts as a gas separator and a gas distributor and therefore, it needs to function adequately in two widely different environments. The interconnect material will be exposed to air on one side and natural gas or coal-derived synthesis gas on the other side. The viable material for the interconnect application must be resistant not only to oxidation but also carburization in hydrocarbon containing low-oxygen environments. In addition, the scales that develop on the exposed surfaces must possess adequate electrical conductivity for them to function as current leads over long service life of the fuel cell. This report addresses five topics of interest for the development of metallic interconnects with adequate performance in fuel cells for long service life. The research conducted over the years and the conclusions reached were used to identify additional areas of research on materials for improved performance of components, especially metallic interconnects, in the complex fuel cell environments. This report details research conducted in the following areas: measurement of area specific electrical resistivity, corrosion performance in dual gas environments by experiments using alloy 446, long term corrosion performance of ferritic and austenitic alloys in hydrogen and methane-reformed synthesis fuel-gas environments, approaches to reduce the area resistance of metallic interconnect, and reduction of electrical resistivity of alumina scales on metallic interconnect. Based on the key requirements for metallic interconnects and the data developed on the corrosion behavior of candidate materials in meeting those requirements, several areas are recommended for further research to develop metallic interconnects with acceptable and reliable long-term performance in solid oxide fuel cells.

  2. Characterization of nanostructured metals and metal nanowires for chip-to-package interconnections

    NASA Astrophysics Data System (ADS)

    Bansal, Shubhra

    The Packaging Research Center at Georgia Tech is proposing nano-interconnections as a new interconnect paradigm for potential low-cost, highest performance and reliability. The idea is to use nanocrystalline (nc) metals and metal nanowires as potential interconnect materials with good mechanical properties and shortest electrical interconnection. The goal of the present work is to determine, as closely as possible, the intrinsic electrical and mechanical behavior of nc- metals and metal nanowires to assess the suitability of these materials for off-chip interconnections. In this study, the microstructural stability, creep, fatigue and fracture properties of nanocrystalline copper and nickel (grain size ~ 50 nm) have been reported, in such depth, for the first time to the best of our knowledge. Fatigue life of nanostructured interconnects has also been computed through finite element models, and a clear advantage of using such a material has been demonstrated. Nanostructured copper interconnections exhibit better fatigue life as compared to microcrystalline copper interconnects at a pitch of 100 mum and lower. Nanocrystalline copper is quite stable upto 100°C whereas nickel is stable even upto 400°C. The activation energy of grain growth is 33.427 kJ/mol and 53.056 kJ/mol for ECAE nanocrystalline copper and nickel respectively. GB diffusion along with grain rotation and coalescence has been identified as the grain growth mechanism. Ultimate tensile and yield strength of nc- copper are 454 MPa and 438 MPa, respectively. These for nc- nickel are 898 MPa and 867 MPa, respectively. These values are at least 5 times higher than microcrystalline counterparts. Considerable amount of plastic deformation has been observed and the fracture is ductile in nature. Fracture surfaces show dimples much larger than grain size and stretching between dimples indicates localized plastic deformation. Nanoindentation hardness for nc- copper and nickel is 2.33 GPa and 3.92 GPa

  3. On the State of the Art of Metal Interconnects for SOFC Application

    SciTech Connect

    Jablonski@netl.doe.gov

    2011-02-27

    One of the recent developments for Solid Oxide Fuel Cells (SOFC) is oxide component materials capable of operating at lower temperatures such as 700-800C. This lower temperature range has provided for the consideration of metallic interconnects which have several advantages over ceramic interconnects: low cost, ease in manufacturing, and high conductivity. Most metals and alloys will oxidize under both the anode and cathode conditions within an SOFC, thus a chief requirement is that the base metal oxide scale must be electrically conductive since this constitutes the majority of the electrical resistance in a metallic interconnect. Common high temperature alloys form scales that contain chrome, silicon and aluminum oxides among others. Under SOFC operating conditions chrome oxide is a semi-conductor while silicon and aluminum oxides are insulators. In this talk we will review the evolution in candidate alloys and surface modifications which constitute an engineered solution for SOFC interconnect applications.

  4. Metal Interconnects for Solid Oxide Fuel Cell Power Systems

    SciTech Connect

    S. Elangovan

    2006-04-01

    Interconnect development is identified by the US Department of energy as a key technical area requiring focused research to meet the performance and cost goals under the Solid State Energy Conversion Alliance initiative. In the Phase I SECA Core Technology Program, Ceramatec investigated a commercial ferritic stainless steel composition for oxidation resistance properties by measuring the weight gain when exposed to air at the fuel cell operating temperature. A pre-treatment process that results in a dense, adherent scale was found to reduce the oxide scale growth rate significantly. A process for coating the surface of the alloy in order to reduce the in-plane resistance and potentially inhibit chromium oxide evaporation was also identified. The combination of treatments provided a very low resistance through the scale. The resistance measured was as low as 10 milliohm-cm2 at 750 C in air. The oxide scale was also found to be stable in humidified air at 750 C. The resistance value was stable over several thermal cycles. A similar treatment and coating for the fuel side of the interconnect also showed an exceptionally low resistance of one milliohm-cm2 in humidified hydrogen at 750 c, and was stable through multiple thermal cycles. Measurement of interconnect resistance when it was exposed to both air and humidified hydrogen on opposite sides also showed low, stable resistance after additional modification to the pre-treatment process. Resistance stacks, using an interconnect stack with realistic gas flows, also provided favorable results. Chromium evaporation issue however requires testing of fuel stacks and was outside of the scope of this project. based on results to-date, the alloy selection and the treatment processes appear to be well suited for SOFC interconnect application.

  5. Determination of interfacial adhesion strength between oxide scale and substrate for metallic SOFC interconnects

    NASA Astrophysics Data System (ADS)

    Sun, X.; Liu, W. N.; Stephens, E.; Khaleel, M. A.

    The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in solid oxide fuel cell (SOFC) operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between the oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

  6. Electrical contacts between cathodes and metallic interconnects in solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yang, Zhenguo; Xia, Guanguang; Singh, Prabhakar; Stevenson, Jeffry W.

    In this work, simulated cathode/interconnect structures were used to investigate the effects of different contact materials on the contact resistance between a strontium doped lanthanum ferrite cathode and a Crofer22 APU interconnect. Among the materials studied, Pt, which has a prohibitive cost for the application, demonstrated the best performance as a contact paste. For the relatively cost-effective perovskites, the contact ASR was found to depend on their electrical conductivity, scale growth on the metallic interconnect, and interactions between the contact material and the metallic interconnect or particularly the scale grown on the interconnect. Manganites appeared to promote manganese-containing spinel interlayer formation that helped minimize the increase of contact ASR. Chromium from the interconnects reacted with strontium in the perovskites to form SrCrO 4. An improved performance was achieved by application of a thermally grown (Mn,Co) 3O 4 spinel protection layer on Crofer22 APU that dramatically minimized the contact resistance between the cathodes and interconnects.

  7. Effect of Interfacial characteristics of metal clad polymeric substrates on electrical high frequency interconnection performance

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Romanofsky, R. R.; Ponchak, G. E.; Liu, D. C.

    1984-01-01

    Etched metallic conductor lines on metal clad polymeric substrates are used for electronic component interconnections. Significant signal losses are observed for microstrip conductor lines used for interconnecting high frequency devices. At these frequencies, the electronic signal travels closer to the metal-polymer interface due to the skin effect. Copper-teflon interfaces were characterized by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to determine the interfacial properties. Data relating roughness of the copper film to signal losses was compared to theory. Films used to enhance adhesion are found, to contribute to these losses.

  8. Highly porous metal oxide networks of interconnected nanotubes by atomic layer deposition.

    PubMed

    Li, Fengbin; Yao, Xueping; Wang, Zhaogen; Xing, Weihong; Jin, Wanqin; Huang, Jun; Wang, Yong

    2012-09-12

    Mesoporous metal oxide networks composed of interconnected nanotubes with ultrathin tube walls down to 3 nm and high porosity up to 90% were fabricated by atomic layer deposition (ALD) of alumina or titania onto templates of swelling-induced porous block copolymers. The nanotube networks possessed dual sets of interconnected pores separated by the tube wall whose thickness could be finely tuned by altering ALD cycles. Because of the excellent pore interconnectivity and high porosity, the alumina nanotube networks showed superior humidity-sensing performances. PMID:22888959

  9. LaCrO{sub 3}-dispersed Cr for metallic interconnect of planar SOFC

    SciTech Connect

    Song, Rak-Hyun; Shin, Dong Ryul; Dokiya, Masayuki

    1996-12-31

    In the planar SOFC, the interconnect materials plays two roles as an electrical connection and as a gas separation plate in a cell stack. The interconnect materials must be chemically stable in reducing and oxidizing environments, and have high electronic conductivity, high thermal conductivity, matching thermal expansion with an electrolyte, high mechanical strength, good fabricability, and gas tightness. Lanthanum chromite so far has been mainly used as interconnect materials in planar SOFC. However, the ceramic materials are very weak in mechanical strength and have poor machining property as compared with metal. Also the metallic materials have high electronic conductivity and high thermal conductivity. Recently some researchers have studied metallic interconnects such as Al{sub 2}O{sub 3}/Inconel 600 cermet, Ni-20Cr coated with (LaSr)CoO{sub 3}, and Y{sub 2}O{sub 3-} or La{sub 2}O{sub 3}-dispersed Cr alloy. These alloys have still some problems because Ni-based alloys have high thermal expansion, the added Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and La{sub 2}O{sub 3} to metals have no electronic conductivity, and the oxide formed on the surface of Cr alloy has high volatility. To solve these problems, in this study, LaCrO{sub 3}-dispersed Cr for metallic interconnect of planar SOFC was investigated. The LaCrO{sub 3}-dispersed Cr can be one candidate of metallic interconnect because LaCrO{sub 3} possesses electronic conductivity and Cr metal has relatively low thermal expansion. The content of 25 vol.% LaCrO{sub 3} Was selected on the basis of a theoretically calculated thermal expansion. The thermal expansion, electrical and oxidation properties were examined and the results were discussed as related to SOFC requirements.

  10. Super-stretchable metallic interconnects on polymer with a linear strain of up to 100%

    NASA Astrophysics Data System (ADS)

    Arafat, Yeasir; Dutta, Indranath; Panat, Rahul

    2015-08-01

    Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high level of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate.

  11. Super-stretchable metallic interconnects on polymer with a linear strain of up to 100%

    SciTech Connect

    Arafat, Yeasir; Dutta, Indranath; Panat, Rahul

    2015-08-24

    Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high level of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate.

  12. Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

    NASA Astrophysics Data System (ADS)

    Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

    2016-02-01

    Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO2) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

  13. Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

    DOEpatents

    Isenberg, A.O.

    1987-03-10

    Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection. 1 fig.

  14. Bipolar plating of metal contacts onto oxide interconnection for solid oxide electrochemical cell

    DOEpatents

    Isenberg, Arnold O.

    1987-01-01

    Disclosed is a method of forming an adherent metal deposit on a conducting layer of a tube sealed at one end. The tube is immersed with the sealed end down into an aqueous solution containing ions of the metal to be deposited. An ionically conducting aqueous fluid is placed inside the tube and a direct current is passed from a cathode inside the tube to an anode outside the tube. Also disclosed is a multi-layered solid oxide fuel cell tube which consists of an inner porous ceramic support tube, a porous air electrode covering the support tube, a non-porous electrolyte covering a portion of the air electrode, a non-porous conducting interconnection covering the remaining portion of the electrode, and a metal deposit on the interconnection.

  15. Mechanism maps for electromigration-induced failure of metal and alloy interconnects

    NASA Astrophysics Data System (ADS)

    Andleigh, Vaibhav K.; Srikar, V. T.; Park, Young-Joon; Thompson, Carl V.

    1999-12-01

    Numerical simulation of electromigration-induced stress evolution provides a versatile technique for analyzing the reliability of interconnects under a wide range of conditions. We study the evolution of stress in confined, layered, stud-terminated, pure metal, and alloy interconnects. Failure times are estimated using different failure criteria associated with different failure modes for broad ranges of line lengths and current densities. The simulation results can be conveniently catalogued through construction of failure mechanism maps that display domains of dominance of different failure modes. Failure mechanism maps are constructed for several different failure criteria, illustrating regimes of line immortality, void-nucleation-limited failure, void-growth-limited failure, and compressive failure as a function of line length and current density. The effects of changes in failure criteria, geometry, and composition are studied for representative interconnect stacks at accelerated and service temperatures. Failure maps may be used to: (i) provide an overview of predicted reliability behavior, (ii) assess how data from accelerated tests can be accurately scaled to service conditions, and (iii) predict the effects of changes in interconnect and shunt-layer materials and dimensions on interconnect reliability.

  16. Characterization of Fe–Cr alloy metallic interconnects coated with LSMO using the aerosol deposition process

    SciTech Connect

    Huang, Jian-Jia; Fu, Yen-Pei; Wang, Jian-Yih; Cheng, Yung-Neng; Lee, Shyong; Hsu, Jin-Cherng

    2014-03-01

    Graphical abstract: - Highlights: • Lanthanum strontium manganite (LSMO) as the protective layer for metallic interconnects was successfully prepared by aerosol deposition method (AD). • The microstructure, electrical resistance and composition for LSMO-coated Fe–Cr alloys undergoing high temperature, long-hour oxidation were investigated. • The denser protective layer prepared by AD might effectively prohibit the growth of oxidized scale after long time running at 800 °C in air. - Abstract: A Fe–Cr alloy, used for metallic interconnects, was coated with a protective layer of lanthanum strontium manganite (LSMO) using the aerosol deposition method (AD). The effects of the LSMO protective layer, which was coated on the Fe–Cr interconnects using AD, on the area specific resistance (ASR) during high temperature oxidation and the Cr evaporation behaviors were systematically investigated in this paper. The microstructures, morphologies, and compositions of the oxidized scales that appeared on the LSMO-coated Fe–Cr alloy after annealing at 800 °C for 750 h in air were examined using SEM equipped with EDS. The EPMA mapping of the LSMO-coated Fe–Cr interconnects undergoing long term, high-temperature oxidation was used to explain the formation layers of the oxidized scale, which consists of (Mn,Cr){sub 3}O{sub 4} and Cr{sub 2}O{sub 3} layers. Moreover, the experimental results revealed that the AD process is a potential method for preparing denser protective layers with highly desirable electrical properties for metallic interconnects.

  17. Oxidation Resistant, Cr Retaining, Electrically Conductive Coatings on Metallic Alloys for SOFC Interconnects

    SciTech Connect

    Vladimir Gorokhovsky

    2008-03-31

    This report describes significant results from an on-going, collaborative effort to enable the use of inexpensive metallic alloys as interconnects in planar solid oxide fuel cells (SOFCs) through the use of advanced coating technologies. Arcomac Surface Engineering, LLC, under the leadership of Dr. Vladimir Gorokhovsky, is investigating filtered-arc and filtered-arc plasma-assisted hybrid coating deposition technologies to promote oxidation resistance, eliminate Cr volatility, and stabilize the electrical conductivity of both standard and specialty steel alloys of interest for SOFC metallic interconnect (IC) applications. Arcomac has successfully developed technologies and processes to deposit coatings with excellent adhesion, which have demonstrated a substantial increase in high temperature oxidation resistance, stabilization of low Area Specific Resistance values and significantly decrease Cr volatility. An extensive matrix of deposition processes, coating compositions and architectures was evaluated. Technical performance of coated and uncoated sample coupons during exposures to SOFC interconnect-relevant conditions is discussed, and promising future directions are considered. Cost analyses have been prepared based on assessment of plasma processing parameters, which demonstrate the feasibility of the proposed surface engineering process for SOFC metallic IC applications.

  18. Compatibility between strontium-doped ferrite cathode and metallic interconnects in solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Arriortua, María Isabel

    2015-04-01

    One of the most important issues related to the performance of solid oxide fuel cells (SOFCs) is the chromium poisoning of the perovskite-type materials used as cathodes by the gaseous chromium species from metallic interconnects. In this study, powder mixtures of LSF40-Cr2O3 were heated at 800 °C and 1000 °C in air and were subsequently analysed by X-ray powder diffraction. For all the mixtures, the crystallisation of SrCrO4 was observed. In addition, the degradation occurring between three alloys with different compositions, Crofer 22 APU, SS430 and Conicro 4023 W 188, as metallic interconnects and La0.6Sr0.4FeO3 (LSF40) ceramic material as a cathode was studied. The results show significant chromium deposition and the formation of SrCrO4, LaCrO3 and La2O3 that block the active LSF40 electrode surface and degrade the stack (YSZ/SDC/LSF40/Interconnect) performance. LSF40 assembled with SS430 exhibited substantial Cr deposition. The deposition of the Cr species and the reaction with the LSF40 cathode is related to the composition of the oxide scales formed at each metallic interconnect and at the same time is related to the composition of the alloys. The best results obtained were for the half-cell (YSZ/SDC/LSF40) in contact with Conicro 4023 W 188 and Crofer 22 APU after heat treatment in air at 800 °C for 100 h.

  19. Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

    DOEpatents

    Griffiths, Stewart K.; Nilson, Robert H.; Hruby, Jill M.

    2002-01-01

    An apparatus and procedure for performing microfabrication of detailed metal structures by electroforming metal deposits within small cavities. Two primary areas of application are: the LIGA process which manufactures complex three-dimensional metal parts and the damascene process used for electroplating line and via interconnections of microelectronic devices. A porous electrode held in contact or in close proximity with a plating substrate or mold top to ensure one-dimensional and uniform current flow into all mold cavities is used. Electrolyte is pumped over the exposed surface of the porous electrode to ensure uniform ion concentrations at this external surface. The porous electrode prevents electrolyte circulation within individual mold cavities, avoiding preferential enhancement of ion transport in cavities having favorable geometries. Both current flow and ion transport are one-dimensional and identical in all mold cavities, so all metal deposits grow at the same rate eliminating nonuniformities of the prior art.

  20. Corrosion and Protection of Metallic Interconnects in Solid Oxide Fuel Cells

    SciTech Connect

    Yang, Z Gary; Stevenson, Jeffry W.; Singh, Prabhakar

    2007-12-09

    Energy security and increased concern over environmental protection have spurred a dramatic world-wide growth in research and development of fuel cells, which electrochemically convert incoming fuel into electricity with no or low pollution. Fuel cell technology has become increasingly attractive to a number of sectors, including utility, automotive, and defense industries. Among the various types of fuel cells, solid oxide fuel cells (SOFCs) operate at high temperature (typically 650-1,000 C) and have advantages in terms of high conversion efficiency and the flexibility of using hydrocarbon fuels, in addition to hydrogen. The high temperature operation, however, can lead to increased mass transport and interactions between the surrounding environment and components that are required to be stable during a lifetime of thousands of hours and up to hundreds of thermal cycles. For stacks with relatively low operating temperatures (<800 C), the interconnects that are used to electrically connect a number of cells in series are typically made from cost-effective metals or alloys. The metallic interconnects must demonstrate excellent stability in a very challenging environment during SOFC operation, as they are simultaneously exposed to both an oxidizing (air) environment on the cathode side and a reducing environment (hydrogen or a reformed hydrocarbon fuel) on the anode side. Other challenges include the fact that water vapor is likely to be present in both of these environments, and the fuel is likely to contain impurities, such as sulfides. Since the fuel is usually a reformed hydrocarbon fuel, such as natural gas, coal gas, biogas, gasoline, etc., the interconnect is exposed to a wet carbonaceous environment at the anode side. Finally, the interconnect must be stable towards any adjacent components, such as electrodes, seals and electrical contact materials, with which it is in physical contact.

  1. Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits.

    PubMed

    Park, Chan Woo; Moon, Yu Gyeong; Seong, Hyejeong; Jung, Soon Won; Oh, Ji-Young; Na, Bock Soon; Park, Nae-Man; Lee, Sang Seok; Im, Sung Gap; Koo, Jae Bon

    2016-06-22

    We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals. PMID:27250997

  2. Solar cell welded interconnection development program. [parallel gap and ultrasonic metal-metal bonding

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.

    1974-01-01

    Parallel gap welding and ultrasonic bonding techniques were developed for joining selected interconnect materials (silver, aluminum, copper, silver plated molybdenum and Kovar) to silver-titanium and aluminum contact cells. All process variables have been evaluated leading to establishment of optimum solar cell, interconnect, electrodes and equipment criteria for obtainment of consistent high quality welds. Applicability of nondestructive testing of solar cell welds has been studied. A pre-weld monitoring system is being built and will be utilized in the numerically controlled parallel gap weld station.

  3. Electrodeposited porous metal oxide films with interconnected nanoparticles applied as anode of lithium ion battery

    SciTech Connect

    Xiao, Anguo Zhou, Shibiao; Zuo, Chenggang; Zhuan, Yongbing; Ding, Xiang

    2014-12-15

    Highlights: • Highly porous NiO film is prepared by a co-electrodeposition method. • Porous NiO film is composed of interconnected nanoparticles. • Porous structure is favorable for fast ion/electron transfer. • Porous NiO film shows good lithium ion storage properties. - Abstract: Controllable synthesis of porous metal oxide films is highly desirable for high-performance electrochemical devices. In this work, a highly porous NiO film composed of interconnected nanoparticles is prepared by a simple co-electrodeposition method. The nanoparticles in the NiO film have a size ranging from 30 to 100 nm and construct large-quantity pores of 20–120 nm. As an anode material for lithium ion batteries, the highly porous NiO film electrode delivers a high discharge capacity of 700 mA h g{sup −1} at 0.2 C, as well as good high-rate performance. After 100 cycles at 0.2 C, a specific capacitance of 517 mA h g{sup −1} is attained. The good electrochemical performance is attributed to the interconnected porous structure, which facilitates the diffusion of ion and electron, and provides large reaction surface area leading to improved performance.

  4. A multi-level code for metallurgical effects in metal-forming processes

    SciTech Connect

    Taylor, P.A.; Silling, S.A.; Hughes, D.A.; Bammann, D.J.; Chiesa, M.L.

    1997-08-01

    The authors present the final report on a Laboratory-Directed Research and Development (LDRD) project, A Multi-level Code for Metallurgical Effects in metal-Forming Processes, performed during the fiscal years 1995 and 1996. The project focused on the development of new modeling capabilities for simulating forging and extrusion processes that typically display phenomenology occurring on two different length scales. In support of model fitting and code validation, ring compression and extrusion experiments were performed on 304L stainless steel, a material of interest in DOE nuclear weapons applications.

  5. Tubular solid oxide fuel cells with porous metal supports and ceramic interconnections

    DOEpatents

    Huang, Kevin; Ruka, Roswell J.

    2012-05-08

    An intermediate temperature solid oxide fuel cell structure capable of operating at from 600.degree. C. to 800.degree. C. having a very thin porous hollow elongated metallic support tube having a thickness from 0.10 mm to 1.0 mm, preferably 0.10 mm to 0.35 mm, a porosity of from 25 vol. % to 50 vol. % and a tensile strength from 700 GPa to 900 GPa, which metallic tube supports a reduced thickness air electrode having a thickness from 0.010 mm to 0.2 mm, a solid oxide electrolyte, a cermet fuel electrode, a ceramic interconnection and an electrically conductive cell to cell contact layer.

  6. High contrast and metal-less alignment process for all-polymer optical interconnect devices

    NASA Astrophysics Data System (ADS)

    Ge, Tao; Yang, Jilin; Summitt, Chris; Wang, Sunglin; Johnson, Lee; Zaverton, Melissa; Milster, Tom; Takashima, Yuzuru

    2015-03-01

    A polymer-based flat, flexible and parallel optical interconnect has become an attractive approach for short-range data transfer. For such a device, a low cost fabrication technique is required for light couplers to redirect light from source to waveguides. Recently, we demonstrated a mask-less gray scale lithography process, which used a CMOS compatible polymer for a 45-degree mirror coupler. Polymer materials such as epoclad and AP2210B can be used to fabricate flexible substrates and waveguides, respectively. We propose an all-photopolymer lithography process to fabricate the flexible and parallel optical interconnect in conjunction with the mirror couplers. In the process, a buried polymer structure is used to precisely align the mirror coupler to waveguides, which make it possible to avoid an additional metallization process. However, the contrast of such buried fiducial mark is low since such the structure is a phase structure. As a result, it is not feasible to use the buried polymer structure as an alignment mark with conventional amplitude based imaging modalities. To increase the contrast of these buried alignment marks, we propose a feature specific alignment system for which the shape and depth of the buried alignment marks are optimized for phase-based imaging such as phase contrast and Schlieren imaging. Our results show that an optimized alignment mark provides a significant contrast enhancement while using a phase contrast imaging system compared to that of a conventional imaging system. In addition, we have fabricated an optimized alignment mark specifically for use with a Schlieren imaging system.

  7. Electrically Conductive, Corrosion-Resistant Coatings Through Defect Chemistry for Metallic Interconnects

    SciTech Connect

    Anil V. Virkar

    2006-12-31

    The principal objective of this work was to develop oxidation protective coatings for metallic interconnect based on a defect chemistry approach. It was reasoned that the effectiveness of a coating is dictated by oxygen permeation kinetics; the slower the permeation kinetics, the better the protection. All protective coating materials investigated to date are either perovskites or spinels containing metals exhibiting multiple valence states (Co, Fe, Mn, Cr, etc.). As a result, all of these oxides exhibit a reasonable level of electronic conductivity; typically at least about {approx}0.05 S/cm at 800 C. For a 5 micron coating, this equates to a maximum {approx}0.025 {Omega}cm{sup 2} area specific resistance due to the coating. This suggests that the coating should be based on oxygen ion conductivity (the lower the better) and not on electronic conductivity. Measurements of ionic conductivity of prospective coating materials were conducted using Hebb-Wagner method. It was demonstrated that special precautions need to be taken to measure oxygen ion conductivity in these materials with very low oxygen vacancy concentration. A model for oxidation under a protective coating is presented. Defect chemistry based approach was developed such that by suitably doping, oxygen vacancy concentration was suppressed, thus suppressing oxygen ion transport and increasing effectiveness of the coating. For the cathode side, the best coating material identified was LaMnO{sub 3} with Ti dopant on the Mn site (LTM). It was observed that LTM is more than 20 times as effective as Mn-containing spinels. On the anode side, LaCrO3 doped with Nb on the Cr site (LNC) was the material identified. Extensive oxidation kinetics studies were conducted on metallic alloy foils with coating {approx}1 micron in thickness. From these studies, it was projected that a 5 micron coating would be sufficient to ensure 40,000 h life.

  8. Degradation of solid oxide fuel cell metallic interconnects in fuels containing sulfur

    SciTech Connect

    Ziomek-Moroz, M.; Hawk, Jeffrey A.

    2005-01-01

    Hydrogen is the main fuel for all types of fuel cells except direct methanol fuel cells. Hydrogen can be generated from all manner of fossil fuels, including coal, natural gas, diesel, gasoline, other hydrocarbons, and oxygenates (e.g., methanol, ethanol, butanol, etc.). Impurities in the fuel can cause significant performance problems and sulfur, in particular, can decrease the cell performance of fuel cells, including solid oxide fuel cells (SOFC). In the SOFC, the high (800-1000°C) operating temperature yields advantages (e.g., internal fuel reforming) and disadvantages (e.g., material selection and degradation problems). Significant progress in reducing the operating temperature of the SOFC from ~1000 ºC to ~750 ºC may allow less expensive metallic materials to be used for interconnects and as balance of plant (BOP) materials. This paper provides insight on the material performance of nickel, ferritic steels, and nickel-based alloys in fuels containing sulfur, primarily in the form of H2S, and seeks to quantify the extent of possible degradation due to sulfur in the gas stream.

  9. Growth and Structure of Metallic Barrier Layer and Interconnect Films I: Experiments

    SciTech Connect

    Baumann, F.H.; Gilmer, G.H.; O'Sullivan, P.L.; Sapjeta, J.; Torre, J.D.; Windt, D.L.

    1999-04-05

    We present experimented results directed at understanding the growth and structure of metallic barrier layer and interconnect films. Numerical simulation results associated with this experimental work are presented in an accompanying paper in these proceedings. Here, thin films of Al, Ti, Cu and Ta have been grown by magnetron sputtering onto oxidized Si substrates. Using a specially-constructed substrate holder, the orientation of the substrate with respect to the growth direction was varied from horizontal to vertical. Films were grown at both low and high argon pressure; in the case of Ta, the cathode power was varied as well. The film structure and in particular the surface roughness was measured by X-ray reflectance and also by atomic force microscopy. We find that the surface roughness increases markedly with orientation angle in the case of Ta and Cu films, and in Ti films grown at high argon pressure. At low pressure, however, the Ti film surface roughness remains constant for all substrate orientations. No variation in roughness with either orientation angle or argon pressure was observed in the Al films. These results suggest that, under certain circumstances, shadowing effects and/or grain orientation (i.e., texture) competition during growth can give rise to lower density, more porous (and thus more rough) films, particularly at large orientation angles, as on sidewalls in sub-micron trenches.

  10. Life prediction of coated and uncoated metallic interconnect for solid oxide fuel cell applications

    NASA Astrophysics Data System (ADS)

    Liu, W. N.; Sun, X.; Stephens, E.; Khaleel, M. A.

    In this paper, we present an integrated experimental and modeling methodology in predicting the life of coated and uncoated metallic interconnect (IC) for solid oxide fuel cell (SOFC) applications. The ultimate goal is to provide cell designer and manufacture with a predictive methodology such that the life of the IC system can be managed and optimized through different coating thickness to meet the overall cell designed life. Crofer 22 APU is used as the example IC material system. The life of coated and uncoated Crofer 22 APU under isothermal cooling was predicted by comparing the predicted interfacial strength and the interfacial stresses induced by the cooling process from the operating temperature to room temperature, together with the measured oxide scale growth kinetics. It was found that the interfacial strength between the oxide scale and the Crofer 22 APU substrate decreases with the growth of the oxide scale, and that the interfacial strength for the oxide scale/spinel coating interface is much higher than that of the oxide scale/Crofer 22 APU substrate interface. As expected, the predicted life of the coated Crofer 22 APU is significantly longer than that of the uncoated Crofer 22 APU.

  11. 3-D perpendicular assembly of single walled carbon nanotubes for complimentary metal oxide semiconductor interconnects.

    PubMed

    Kim, Tae-Hoon; Yilmaz, Cihan; Somu, Sivasubramanian; Busnaina, Ahmed

    2014-05-01

    Due to their superior electrical properties such as high current density and ballistic transport, carbon nanotubes (CNT) are considered as a potential candidate for future Very Large Scale Integration (VLSI) interconnects. However, direct incorporation of CNTs into Complimentary Metal Oxide Semiconductor (CMOS) architecture by conventional chemical vapor deposition (CVD) growth method is problematic since it requires high temperatures that might damage insulators and doped semiconductors in the underlying CMOS circuits. In this paper, we present a directed assembly method to assemble aligned CNTs into pre-patterned vias and perpendicular to the substrate. A dynamic electric field with a static offset is applied to provide the force needed for directing the SWNT assembly. It is also shown that by adjusting assembly parameters the density of the assembled CNTs can be significantly enhanced. This highly scalable directed assembly method is conducted at room temperature and pressure and is accomplished in a few minutes. I-V characterization of the assembled CNTs was conducted using a Zyvex nanomanipulator in a scanning electron microscope (SEM) and the measured value of the resistance is found to be 270 komega s. PMID:24734611

  12. Chip-package nano-structured copper and nickel interconnections with metallic and polymeric bonding interfaces

    NASA Astrophysics Data System (ADS)

    Aggarwal, Ankur

    With the semiconductor industry racing toward a historic transition, nano chips with less than 45 nm features demand I/Os in excess of 20,000 that support computing speed in terabits per second, with multi-core processors aggregately providing highest bandwidth at lowest power. On the other hand, emerging mixed signal systems are driving the need for 3D packaging with embedded active components and ultra-short interconnections. Decreasing I/O pitch together with low cost, high electrical performance and high reliability are the key technological challenges identified by the 2005 International Technology Roadmap for Semiconductors (ITRS). Being able to provide several fold increase in the chip-to-package vertical interconnect density is essential for garnering the true benefits of nanotechnology that will utilize nano-scale devices. Electrical interconnections are multi-functional materials that must also be able to withstand complex, sustained and cyclic thermo-mechanical loads. In addition, the materials must be environmentally-friendly, corrosion resistant, thermally stable over a long time, and resistant to electro-migration. A major challenge is also to develop economic processes that can be integrated into back end of the wafer foundry, i.e. with wafer level packaging. Device-to-system board interconnections are typically accomplished today with either wire bonding or solders. Both of these are incremental and run into either electrical or mechanical barriers as they are extended to higher density of interconnections. Downscaling traditional solder bump interconnect will not satisfy the thermo-mechanical reliability requirements at very fine pitches of the order of 30 microns and less. Alternate interconnection approaches such as compliant interconnects typically require lengthy connections and are therefore limited in terms of electrical properties, although expected to meet the mechanical requirements. A novel chip-package interconnection technology is

  13. Metal/ceramic composites via infiltration of an interconnected wood-derived ceramic

    NASA Astrophysics Data System (ADS)

    Wilkes, Thomas E.

    The use of composites is increasing as they afford scientists and engineers the ability to combine the advantageous properties of each constituent phase, e.g. metal ductility and ceramic stiffness. With respect to materials design, biomimetics is garnering increasing attention due to the complex, yet efficient, natural microstructures. One such biomimetic, or in this case 'bio-derived,' curiosity is wood-derived ceramic, which is made by either replicating or converting wood into a ceramic. The resulting porous and anisotropic material retains the precursor microstructure. The wide variety of precursors can yield materials with a range of pore sizes and distribution of pores. The purpose of this work was to study the processing, microstructure, and properties of aluminum/silicon carbide composites. The composites were made by infiltrating molten aluminum into porous wood-derived SIC, which was produced by the reactive melt-infiltration of silicon into pyrolyzed wood. The composite microstructure consisted of interconnected SiC surrounding Al-alloy 'fibers.' The strength, modulus, and toughness were measured in both longitudinal and transverse orientations. The Al → SiC load transfer was investigated with high-energy X-ray diffraction in combination with in-situ compressive loading. The properties in flexure were found to decrease with increasing temperature. Despite the complex microstructure, predictions of the composite flexural modulus and longitudinal fracture toughness were obtained using simple models: Halpin-Tsai bounds and the Ashby et al. model of the effect of ductile particle-reinforcements on the toughness of brittle materials (Ashby et al. 1989), respectively. In addition, the Al/SiC research inspired the investigation of carbon-reinforced copper composites. The goal was to explore the feasibility of making a high-thermal conductivity composite by infiltrating copper into wood-derived carbon. Results indicated that Cu/C composites could be made with

  14. Multilevel Green's function interpolation method for scattering from composite metallic and dielectric objects.

    PubMed

    Shi, Yan; Wang, Hao Gang; Li, Long; Chan, Chi Hou

    2008-10-01

    A multilevel Green's function interpolation method based on two kinds of multilevel partitioning schemes--the quasi-2D and the hybrid partitioning scheme--is proposed for analyzing electromagnetic scattering from objects comprising both conducting and dielectric parts. The problem is formulated using the surface integral equation for homogeneous dielectric and conducting bodies. A quasi-2D multilevel partitioning scheme is devised to improve the efficiency of the Green's function interpolation. In contrast to previous multilevel partitioning schemes, noncubic groups are introduced to discretize the whole EM structure in this quasi-2D multilevel partitioning scheme. Based on the detailed analysis of the dimension of the group in this partitioning scheme, a hybrid quasi-2D/3D multilevel partitioning scheme is proposed to effectively handle objects with fine local structures. Selection criteria for some key parameters relating to the interpolation technique are given. The proposed algorithm is ideal for the solution of problems involving objects such as missiles, microstrip antenna arrays, photonic bandgap structures, etc. Numerical examples are presented to show that CPU time is between O(N) and O(N log N) while the computer memory requirement is O(N). PMID:18830332

  15. Electromigration of damascene copper of IC interconnect

    NASA Astrophysics Data System (ADS)

    Meyer, William Kevin

    Copper metallization patterned with multi-level damascene process is prone to electromigration failure, which affects the reliability and performance of IC interconnect. In typical products, interconnect that is not already constrained by I·R drop or Joule self-heating operates at 'near threshold' conditions. Measurement of electromigration damage near threshold is very difficult due to slow degradation requiring greatly extended stress times, or high currents that cause thermal anomalies. Software simulations of the electromigration mechanism combined with characterization of temperature profiles allows extracting material parameters and calculation of design rules to ensure reliable interconnect. Test structures capable of demonstrating Blech threshold effects while allowing thermal characterization were designed and processed. Electromigration stress tests at various conditions were performed to extract both shortline (threshold) and long-line (above threshold) performance values. The resistance increase time constant shows immortality below Je·L (product of current density and segment length) of 3200 amp/cm. Statistical analysis of times-to-failure show that long lines last 105 hours at 3.1 mA/mum2 (120°C). While this is more robust than aluminum interconnect, the semiconductor industry will be challenged to improve that performance as future products require.

  16. Metallic interconnects for SOFC: Characterisation of corrosion resistance and conductivity evaluation at operating temperature of differently coated alloys

    NASA Astrophysics Data System (ADS)

    Fontana, S.; Amendola, R.; Chevalier, S.; Piccardo, P.; Caboche, G.; Viviani, M.; Molins, R.; Sennour, M.

    One of challenges in improving the performance and cost-effectiveness of solid oxide fuel cells (SOFCs) is the development of suitable interconnect materials. Recent researches have enabled to decrease the operating temperature of the SOFC from 1000 to 800 °C. Chromia forming alloys are then among the best candidates for interconnects. However, low electronic conductivity and volatility of chromium oxide scale need to be solved to improve interconnect performances. In the field of high temperature oxidation of metals, it is well known that the addition of reactive element into alloys or as thin film coatings, improves their oxidation resistance at high temperature. The elements of beginning of the lanthanide group and yttrium are the most efficient. The goal of this study is to make reactive element oxides (La 2O 3, Nd 2O 3 and Y 2O 3) coatings by metal organic chemical vapour deposition (MOCVD) on Crofer 22 APU, AL 453 and Haynes 230 in order to form perovskite oxides which present a good conductivity at high temperature. The coatings were analysed after 100 h ageing at 800 °C in air under atmospheric pressure by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analyses, X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses. Area-specific resistance (ASR) was measured in air for the same times and temperature, using a sandwich technique with Pt paste for electrical contacts between surfaces. The ASR values for the best coating were estimated to be limited to 0.035 Ω cm 2, even after 40,000 h use.

  17. A low-Cr metallic interconnect for intermediate-temperature solid oxide fuel cells

    SciTech Connect

    Geng, Shujiang; Zhu, Jiahong; Brady, Michael P; Anderson, Harlan; ZHOU, XIADONG; YANG, ZHENGUO

    2007-01-01

    Solid oxide fuel cells (SOFCs) have attracted significant attention due to the potential for environmentally-friendly power generation with high efficiency, fuel flexibility, and zero/no emissions. However, the main hurdles thwarting the commercial introduction of SOFCs are the stack cost and durability, particularly related to the long-term stability of stack/cell materials such as the interconnect 1-3. There has been recent interest in utilizing the Cr2O3-forming alloys as interconnect for intermediate-temperature SOFCs4-6. As a consequence, volatile Cr species from the Cr2O3 scale can cause severe degradation of electrical and catalytic properties of the cathode7-9. Here, we report a new low-Cr Fe-Co-Ni base alloy that demonstrates a close match in coefficient of thermal expansion (CTE) with adjacent cell components; good oxidation resistance; and low oxide scale area specific resistance (ASR). The formation of a Cr-free (Fe,Co,Ni)3O4 spinel outer layer over the chromia inner layer upon thermal exposure effectively reduces the chromium evaporation.

  18. Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2015-01-01

    Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

  19. Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.; Krasowski, Michael J.; Prokop, Norman F.

    2015-01-01

    Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.

  20. High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnects

    SciTech Connect

    Ludowise, M.J.; LaRue, R.A.; Borden, P.G.; Gregory, P.E.; Dietze, W.T.

    1982-09-15

    A two-junction solar cell has been fabricated using an Al/sub 0.30/Ga/sub 0.70/As (1.82 eV) tap cell and a GaAs (1.43 eV) bottom cell. A processed metal interconnect is used to connect the two cells together in series. An efficiency of 21.5% at 980 mW/cm/sup 2/ has been measured in a solar simulator with an open circuit voltage of 2.35 V, a short circuit current of 118.6 mA/cm/sup 2/, and a fill factor of 0.76. An efficiency of 22% has been measured under 130 AM3 sun in a solar tracking concentrator. Organometallic vapor phase epitaxy is used to grow the entire nine-layer device.

  1. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Chakrabarti, Sudipto; Pal, Amlan J.

    2015-05-01

    We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse.We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility

  2. Introduction to Electrochemical Process Integration for Cu Interconnects

    NASA Astrophysics Data System (ADS)

    Ohba, Takayuki

    This chapter focuses on advanced multilevel interconnects, contributed by distinguished authors in the following sections: Damascene Concept and Process Steps (Nobuyoshi Kobayashi), Advanced BEOL Technology Overview (Takashi Yoda and Hideshi Miyajima), Lithography for Cu Damascene fabrication (Yoshihiro Hayashi), Physical Vapor Deposition Barriers for Cu metallization PVD Barriers (Junichi Koike), Low-k dielectrics (Yoshihiro Hayashi), CMP for Cu Processing (Manabu Tsujimura), Electrochemical View of Copper Chemical Mechanical Polishing (CMP) (D. Starosvetsky and Y. Ein-Eli), and Copper Post-CMP Cleaning (D. Starosvetsky and Y. Ein-Eli).

  3. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy.

    PubMed

    Chakrabarti, Sudipto; Pal, Amlan J

    2015-06-01

    We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse. PMID:25966930

  4. Light-triggered self-construction of supramolecular organic nanowires as metallic interconnects

    NASA Astrophysics Data System (ADS)

    Faramarzi, Vina; Niess, Frédéric; Moulin, Emilie; Maaloum, Mounir; Dayen, Jean-François; Beaufrand, Jean-Baptiste; Zanettini, Silvia; Doudin, Bernard; Giuseppone, Nicolas

    2012-06-01

    The construction of soft and processable organic material able to display metallic conduction properties—a large density of freely moving charges—is a major challenge for electronics. Films of doped conjugated polymers are widely used as semiconductor devices, but metallic-type transport in the bulk of such materials remains extremely rare. On the other hand, single-walled carbon nanotubes can exhibit remarkably low contact resistances with related large currents, but are intrinsically very difficult to isolate and process. Here, we describe the self-assembly of supramolecular organic nanowires between two metallic electrodes, from a solution of triarylamine derivative, under the simultaneous action of light and electric field triggers. They exhibit a combination of large conductivity values (>5 × 103 S m-1) and a low interface resistance (<2 × 10-4 Ω m). Moreover, the resistance of nanowires in series with metal interfaces systematically decreases when the temperature is lowered to 1.5 K, revealing an intrinsic metallic behaviour.

  5. Flexible polymer optical layer for board-level optical interconnects by highly durable metal imprinting method

    NASA Astrophysics Data System (ADS)

    Wang, Xiaolong; Dou, Xinyuan; Lin, Xiaohui; Chen, Ray T.

    2010-02-01

    In this paper, we presented fabrication of nickel based metal mold with 45° tilted surfaces on both ends of the channel waveguide through electroplating process. To obtain a precise 45° tilted angle, a 50μm thick SU-8 layer was UV exposed under de-ionized water, with repeatable error control of 0.5°. The polymeric waveguide array with 45° micromirrors, which is formed by a UV imprinting method with the fabricated metallic mold, shows total insertion losses around 4dB, propagation loss around 0.18dB/cm and 75% coupling efficiency.

  6. High performance ceramic interconnect material for solid oxide fuel cells (SOFCs): Ca- and transition metal-doped yttrium chromite

    NASA Astrophysics Data System (ADS)

    Yoon, Kyung Joong; Stevenson, Jeffrey W.; Marina, Olga A.

    2011-10-01

    The effect of transition metal substitution on thermal and electrical properties of Ca-doped yttrium chromite was investigated in relation to use as a ceramic interconnect in high temperature solid oxide fuel cells (SOFCs). 10 at.% Co, 4 at.% Ni, and 1 at.% Cu substitution on B-site of 20 at.% Ca-doped yttrium chromite led to a close match of thermal expansion coefficient (TEC) with that of 8 mol% yttria-stabilized zirconia (YSZ), and a single phase Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 remained stable between 25 and 1100 °C over a wide oxygen partial pressure range. Doping with Cu significantly facilitated densification of yttrium chromite. Ni dopant improved both electrical conductivity and dimensional stability in reducing environments, likely through diminishing the oxygen vacancy formation. Substitution with Co substantially enhanced electrical conductivity in oxidizing atmosphere, which was attributed to an increase in charge carrier density and hopping mobility. Electrical conductivity of Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 at 900 °C is 57 S cm-1 in air and 11 S cm-1 in fuel (pO2 = 5 × 10-17 atm) environments. Chemical compatibility of doped yttrium chromite with other cell components was verified at the processing temperatures. Based on the chemical and dimensional stability, sinterability, and thermal and electrical properties, Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 is suggested as a promising SOFC ceramic interconnect to potentially overcome technical limitations of conventional acceptor-doped lanthanum chromites.

  7. High Performance Ceramic Interconnect Material for Solid Oxide Fuel Cells (SOFCs): Ca- and Transition Metal-doped Yttrium Chromite

    SciTech Connect

    Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

    2011-10-15

    The effect of transition metal substitution on thermal and electrical properties of Ca-doped yttrium chromite was investigated in relation to use as a ceramic interconnect in high temperature solid oxide fuel cells (SOFCs). 10 at% Co, 4 at% Ni, and 1 at% Cu substitution on B-site of 20 at% Ca-doped yttrium chromite led to a close match of thermal expansion coefficient (TEC) with that of 8 mol% yttria-stabilized zirconia (YSZ), and a single phase Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 remained stable between 25 and 1100 degree C over a wide oxygen partial pressure range. Doping with Cu significantly facilitated densification of yttrium chromite. Ni dopant improved both electrical conductivity and dimensional stability in reducing environments, likely through diminishing the oxygen vacancy formation. Substitution with Co substantially enhanced electrical conductivity in oxidizing atmosphere, which was attributed to an increase in charge carrier density and hopping mobility. Electrical conductivity of Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 at 900 degree C is 57 S/cm in air and 11 S/cm in fuel (pO2=5×10^-17 atm) environments. Chemical compatibility of doped yttrium chromite with other cell components was verified at the processing temperatures. Based on the chemical and dimensional stability, sinterability, and thermal and electrical properties, Y0.8Ca0.2Cr0.85Co0.1Ni0.04Cu0.01O3 is suggested as a promising SOFC ceramic interconnect to potentially overcome technical limitations of conventional acceptor-doped lanthanum chromites.

  8. Creep rupture of the joint of a solid oxide fuel cell glass-ceramic sealant with metallic interconnect

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Kuang; Lin, Kun-Liang; Yeh, Jing-Hong; Wu, Si-Han; Lee, Ruey-Yi

    2014-01-01

    Creep properties of sandwich joint specimens made of a newly developed BaO-B2O3-Al2O3-SiO2 glass-ceramic sealant (GC-9) and a ferritic-stainless-steel interconnect (Crofer 22 H) for planar solid oxide fuel cells (pSOFCs) are investigated at 800 °C under constant shear and tensile loadings. The creep rupture time of Crofer 22 H/GC-9/Crofer 22 H joint specimens is increased with a decrease in applied load for both shear and tensile loading modes. The given metal/sealant/metal joint has a greater degradation of joint strength at 800 °C under prolonged, constant tensile loading as compared to shear loading. The tensile creep strength at a rupture time of 1000 h is about 9% of the average tensile joint strength, while the shear creep strength at 1000 h is about 23% of the average shear joint strength. Failure patterns of both shear and tensile joint specimens are similar regardless of the creep rupture time. In general, creep cracks initiate at the interface between the (Cr,Mn)3O4 spinel layer and the BaCrO4 chromate layer, penetrate through the BaCrO4 layer, and propagate along the interface between the chromate layer and glass-ceramic substrate until final fracture. Final, fast fracture occasionally takes place within the glass-ceramic layer.

  9. Material development of polymer/metal paste for flip-chip attach interconnection technology

    SciTech Connect

    Roldann, J.M.; Saraf, R.F.; Sambucetti, C.J.; Cotte, J.

    1996-11-01

    Upon completion of the second year of this contract, we have delivered the next generation of polymer/metal composite, optimum paste H, to Endicott. We have done preliminary flip-chip type bonding at Universal Instruments, working closely with their personnel to enhance their equipment set and process. We have also shown that a PMC bond can withstand over 40% strain without effecting its electrical and mechanical properties. This resilience of the conductive polymer paste both under electrical and mechanical behavior, is a strong indication of the applicability of the material for Flip Chip Attach to organic laminates. We have also confirmed during this phase of the Contract that the Optimum Paste H can be processed and applied under normal ambient conditions, without special precautions of low temperature or inert atmospheres, a property which sets our system apart from many other commercial pastes. We would also like to remark the achievement of optimized paste properties and how these properties address the mayor issues and requirements for flip attach applications, in Table I and II of this report. Use of the PMC to build interposer for chip-testing. Due to the high electrical conductivity of the PMC, a process was developed to use a thin film layer of the paste applied to a metal cathode of an electrochemical cell, to build fully metallized thru hole arrays containing a given C-4 chip foot print. This array interposers can be used for chip test (known-good-chip) applications. This process will be described in detail at the Year-End Review Meeting in Binghanton.

  10. The effect of metal-contacts on carbon nanotube for high frequency interconnects and devices

    SciTech Connect

    Chimowa, George; Bhattacharyya, Somnath

    2014-08-15

    High frequency characterisation of platinum and tungsten contacts on individual multi-walled carbon nanotubes (MWNT) is performed from 10 MHz to 50 GHz. By measuring the scattering parameters of aligned individual MWNTs, we show that metal contacts enhance an inductive response due to the improved MWNT-electrode coupling reducing the capacitive effect. This behaviour is pronounced in the frequency below 10 GHz and strong for tungsten contacts. We explain the inductive response as a result of the interaction of stimulus current with the localized (or defects) states present at the contact region resulting in the current lagging behind the voltage. The results are further supported by direct current measurements that show tungsten to significantly increase carbon nanotube-electrode coupling. The immediate consequence is the reduction of the contact resistance, implying a reduction of electron tunnelling barrier from the electrode to the carbon nanotube.

  11. Model-based prediction of the ohmic resistance of metallic interconnects from oxide scale growth based on scanning electron microscopy

    NASA Astrophysics Data System (ADS)

    Linder, Markus; Hocker, Thomas; Holzer, Lorenz; Friedrich, K. Andreas; Iwanschitz, Boris; Mai, Andreas; Schuler, J. Andreas

    2014-12-01

    The increase of ohmic losses caused by continuously growing Cr2O3 scales on metallic interconnects (MICs) is a major contribution to the degradation of SOFC stacks. Comparison of measured ohmic resistances of chromium- (CFY) and ferritic-based alloy (Crofer) MICs at 850 °C in air with the growth of mean oxide scale thicknesses, obtained from SEM cross section images, reveals a non-trivial, non-linear relationship. To understand the correlation between scale evolution and resulting ohmic losses, 2D finite element (FE) simulations of electrical current distributions have been performed for a large number of real oxide scale morphologies. It turns out that typical morphologies favor nonhomogeneous electrical current distributions, where the main current flows over rather few "bridges", i.e. local spots with relatively thin oxide scales. These current-"bridges" are the main reason for the non-linear dependence of ohmic losses on the corresponding oxide scale morphology. Combining electrical conductivity and SEM measurements with FE simulations revealed two further advantages: it permits a more reliable extrapolation of MIC-degradation data over the whole stack lifetime and it provides a method to assess the effective electrical conductivity of thermally grown Cr2O3 scales under stack operation.

  12. Electrically Robust Metal Nanowire Network Formation by In-Situ Interconnection with Single-Walled Carbon Nanotubes

    PubMed Central

    Woo, Jong Seok; Han, Joong Tark; Jung, Sunshin; Jang, Jeong In; Kim, Ho Young; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2014-01-01

    Modulation of the junction resistance between metallic nanowires is a crucial factor for high performance of the network-structured conducting film. Here, we show that under current flow, silver nanowire (AgNW) network films can be stabilised by minimizing the Joule heating at the NW-NW junction assisted by in-situ interconnection with a small amount (less than 3 wt%) of single-walled carbon nanotubes (SWCNTs). This was achieved by direct deposition of AgNW suspension containing SWCNTs functionalised with quadruple hydrogen bonding moieties excluding dispersant molecules. The electrical stabilisation mechanism of AgNW networks involves the modulation of the electrical transportation pathway by the SWCNTs through the SWCNT-AgNW junctions, which results in a relatively lower junction resistance than the NW-NW junction in the network film. In addition, we propose that good contact and Fermi level matching between AgNWs and modified SWCNTs lead to the modulation of the current pathway. The SWCNT-induced stabilisation of the AgNW networks was also demonstrated by irradiating the film with microwaves. The development of the high-throughput fabrication technology provides a robust and scalable strategy for realizing high-performance flexible transparent conductor films. PMID:24763208

  13. Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology

    NASA Astrophysics Data System (ADS)

    Chen, Zhe; Prasad, K.; Li, C. Y.; Lu, P. W.; Su, S. S.; Tang, L. J.; Gui, D.; Balakumar, S.; Shu, R.; Kumar, Rakesh

    2004-03-01

    With the acknowledged insufficiency of traditional Ta or TaN barriers, deposited by physical vapor deposition (PVD), in the Cu/porous ultralow-k intermetal dielectric integration, an amorphous hydrogenated SiC (a-SiC:H)/Ta bilayer sidewall diffusion barrier has been fabricated using 0.13 μm Cu/porous ultralow-k [Porous-SiLK (Proprietary product from Dow Chemical Corporation, USA), k˜2.2] single damascene process. The electrical tests show that the line-to-line leakage current and the electrical breakdown field (EBD) of samples with this a-SiC:H/Ta dielectric/metal bilayer structure are significantly improved compared to the conventional PVD multi-stacked Ta(N) sidewall barrier. This improvement is mostly due to surface roughness modification after the deposition of a-SiC:H film, which, in addition to being a good barrier to Cu diffusion, can effectively "seal" the weak points on the surface of porous low-k material that are responsible for the sidewall barrier failure.

  14. Evaluation of nickel-titanium oxide-niobium pentoxide metal ceramic composite as interconnect for solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Budur, Abhijith

    With increasing importance for clean energy, fuel cells have gained great significance in recent decades. Solid oxide fuel cells are easy to transport due to presence of solid electrolyte and also have requisite electrical properties,but have been obstructed by their limitation to be used at only temperatures greater than 6000C and less than 8000C. To construct a stack of cells, materials that are good electrical conductors and having necessary mechanical strengths at that temperatures are being considered as interconnects between the cells. Evaluation of Nickel-Titanium dioxide-Niobium pentoxide (NTN) as interconnect and comparison to Stainless Steel 441 alloy has been made in this research. The criteria for evaluation are the resistance, long-term stability and the power density characteristics of the cell for each interconnect. Electrical measurements by impedance spectroscopy techniques were conducted at variousworking temperatures using a gas mixture of 10 % hydrogen and 90% nitrogen to evaluate both interconnect materials in the working range of fuel cells. Scanning Electron Microscopy images of Lanthanum Strontium Manganite paste before and after the fuel cell measurements are shown.The results showed that both NTN and Stainless Steel 441 interconnects exhibit similar electrical properties under operating conditions of the fuel cell. Since theNTN interconnect is less prone to corrosion and does not have the effect of chromium poisoning, it can be considered as a viable interconnect material for solid oxide fuel cells.

  15. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-01

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  16. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  17. Multi-level modeling for sensitivity assessment of springback in sheet metal forming

    NASA Astrophysics Data System (ADS)

    Lebon, J.; Lequilliec, G.; Coelho, R. Filomeno; Breitkopf, P.; Villon, P.

    2013-05-01

    In this work, we highlight that sensitivity analysis of metal forming process requires both high precision and low cost numerical models. We propose a two-pronged methodology to address these challenges. The deep drawing simulation process is performed using an original low cost semi-analytical approach based on a bending under tension model (B-U-T) with a good accuracy for small random perturbations of the physical and process parameters. The springback sensitivity analysis is based on the Sobol indices approach and performed using an non intrusive efficient methodology based on the post-treatment of the polynomial chaos coefficients.

  18. SOFC INTERCONNECT DEVELOPMENT

    SciTech Connect

    Diane M. England

    2004-03-16

    An interconnect for an SOFC stack is used to connect fuel cells into a stack. SOFC stacks are expected to run for 40,000 hours and 10 thermal cycles for the stationary application and 10,000 hours and 7000 thermal cycles for the transportation application. The interconnect of a stack must be economical and robust enough to survive the SOFC stack operation temperature of 750 C and must maintain the electrical connection to the fuel cells throughout the lifetime and under thermal cycling conditions. Ferritic and austenitic stainless steels, and nickel-based superalloys were investigated as possible interconnect materials for solid oxide fuel cell (SOFC) stacks. The alloys were thermally cycled in air and in a wet nitrogen-argon-hydrogen (N2-Ar-H2-H2O) atmosphere. Thermogravimetry was used to determine the parabolic oxidation rate constants of the alloys in both atmospheres. The area-specific resistance of the oxide scale and metal substrates were measured using a two-probe technique with platinum contacts. The study identifies two new interconnect designs which can be used with both bonded and compressive stack sealing mechanisms. The new interconnect designs offer a solution to chromium vaporization, which can lead to degradation of some (chromium-sensitive) SOFC cathodes.

  19. The effect of doping (Mn,B)3O4 materials as protective layers in different metallic interconnects for Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Nó, María Luisa; Larrañaga, Aitor; Arriortua, María Isabel

    2013-12-01

    Spinel oxides with the general formula of (Mn,B)3O4 (B = Co, Fe) were used as barrier materials between the cathode and the metallic interconnect to reduce the rate of cathode degradation by Cr poisoning. The effect of doping at the B position was investigated terms of microstructure and electrical conductivity to determine its behaviour and effectiveness as a protective layer in contact with three metallic materials (Crofer 22 APU, SS430 and Conicro 4023 W 188). The analysis showed that the use of these materials considerably decreased the reactivity and diffusion of Cr between the cathode and the metallic interconnects. The protective layer doped with Fe at the B position exhibited the least amount of reactivity with the interconnector and cathode materials. The worst results were observed for SS430 cells coated with a protective layer perhaps due to their low Cr content. The Crofer 22 APU and Conicro 4023 W 188 samples exhibited very similar conductivity results in the presence of the MnCo1.9Fe0.1O4 protective coating. As a result, these two material combinations are a promising option for use as bipolar plates in SOFC.

  20. Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Chen, Liangyu; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

    2015-01-01

    The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

  1. Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

    NASA Technical Reports Server (NTRS)

    Spry, David J.; Neudeck, Philip G.; Liangyu, Chen; Evans, Laura J.; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

    2015-01-01

    The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

  2. Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node

    NASA Astrophysics Data System (ADS)

    Sharma, Deepak K.; Khosla, Robin; Sharma, Satinder K.

    2015-09-01

    Metal-Ferroelectric-Insulator-Semiconductor (MFIS) thin film capacitors with lead zirconate titanate (Pb(Zr0.52Ti0.48)O3) as ferroelectric layer and ultrathin high-κ titanium oxynitride (TiOxNy) as insulating buffer layer on p-Si are fabricated by RF magnetron sputtering for non-volatile multilevel ferroelectric random access memory (FeRAM). Micro Raman analysis of the proposed systems confirmed the existence of most stable tetragonal rutile phase in ultrathin TiOxNy and perovskite phase of PZT thin films. AFM analysis showed that surface roughness of ultrathin TiOxNy and thin PZT films are ∼2.54 nm and ∼1.85 nm, respectively and result the uniform interface between substrate and metal. The maximum C-V memory window of ∼1.25 V was obtained at cyclic sweep voltage of ±6 V and starts to decrease when the sweep voltage exceeds 6 V due to charge injection. The fabricated structure possesses good data retention measured till 1.5 h and high, low capacitance states remain distinguishable even if extrapolated to 15 years. The proposed system exhibited excellent TiOxNy-Si interface, incomparable high breakdown field strength ∼11.15 MV/cm and low leakage current density (J) ∼5 μA/cm2 at +4 V. Thus, Au/PZT/TiOxNy/Si MFIS based FeRAM devices with multilevel operation, high breakdown field and excellent retention are prospective contender for next generation multilevel FeRAM technology node.

  3. Electrical behavior of aluminosilicate glass-ceramic sealants and their interaction with metallic solid oxide fuel cell interconnects

    NASA Astrophysics Data System (ADS)

    Goel, Ashutosh; Tulyaganov, Dilshat U.; Kharton, Vladislav V.; Yaremchenko, Aleksey A.; Ferreira, José M. F.

    A series of alkaline-earth aluminosilicate glass-ceramics (GCs) were appraised with respect to their suitability as sealants for solid oxide fuel cells (SOFCs). The parent composition with general formula Ca 0.9MgAl 0.1La 0.1Si 1.9O 6 was modified with Cr 2O 3 and BaO. The addition of BaO led to a substantial decrease in the total electrical conductivity of the GCs, thus improving their insulating properties. BaO-containing GCs exhibited higher coefficient of thermal expansion (CTE) in comparison to BaO-free GCs. An extensive segregation of oxides of Ti and Mn, components of the Crofer22 APU interconnect alloy, along with negligible formation of BaCrO 4 was observed at the interface between GC/interconnects diffusion couples. Thermal shock resistance and gas-tightness of GC sealants in contact with yttria-stabilized zirconia electrolyte (8YSZ) was evaluated in air and water. Good matching of CTE and strong, but not reactive, adhesion to the solid electrolyte and interconnect, in conjunction with a high level of electrical resistivity, are all advantageous for potential SOFC applications.

  4. Interconnect resistance of photovoltaic submodules

    NASA Technical Reports Server (NTRS)

    Volltrauer, H.; Eser, E.; Delahoy, A. E.

    1985-01-01

    Small area amorphous silicon solar cells generally have higher efficiencies than large interconnected submodules. Among the reasons for the differences in performance are the lack of large area uniformity, the effect of nonzero tin oxide sheet resistance, and possibly pinholes in the various layers. Another and usually small effect that can contribute to reduced performance of interconnected cells is the resistance of the interconnection i.e., the series resistance introduced by the metal to tin oxide contact through silicon. Proper processing problems to avoid poor contacts are discussed.

  5. Alloy Films Deposited by Electroplating as Precursors for Protective Oxide Coatings on Solid Oxide Fuel Cells Metallic Interconnect Materials

    SciTech Connect

    Johnson, Christopher; Gemmen, R.S.; Cross, Caleb

    2006-10-01

    The successful development of stainless steel interconnects for intermediate temperature solid oxide fuel cells (SOFC) may be the materials breakthrough that makes SOFC technology truly commercial. Many of the ferritic stainless steels, however, suffer from a relatively high area specific resistance (ASR) after long exposure times at temperature and the Cr in the native oxide can evaporate and contaminate other cell components. Conductive coatings that resist oxide scale growth and chromium evaporation may prevent both of these problems. In the present study electrochemical deposition of binary alloys followed by oxidation of the alloy to form protective and conductive oxide layers is examined. Results are presented for the deposition of Mn/Co and Fe/Ni alloys via electroplating to form a precursor for spinel oxide coating formation. Analysis of the alloy coatings is done by SEM, EDS and XRD.

  6. Electrical interconnect

    DOEpatents

    Frost, John S.; Brandt, Randolph J.; Hebert, Peter; Al Taher, Omar

    2015-10-06

    An interconnect includes a first set of connector pads, a second set of connector pads, and a continuous central portion. A first plurality of legs extends at a first angle from the continuous central portion. Each leg of the first plurality of legs is connected to a connector pad of a first set of connector pads. A second plurality of legs extends at a second angle from the continuous central portion. Each leg of the second plurality of legs is connected to a connector pad of the second set of connector pads. Gaps are defined between legs. The gaps enable movement of the first set of connector pads relative to the second set of connector pads.

  7. Modeling interconnect corners under double patterning misalignment

    NASA Astrophysics Data System (ADS)

    Hyun, Daijoon; Shin, Youngsoo

    2016-03-01

    Publisher's Note: This paper, originally published on March 16th, was replaced with a corrected/revised version on March 28th. If you downloaded the original PDF but are unable to access the revision, please contact SPIE Digital Library Customer Service for assistance. Interconnect corners should accurately reflect the effect of misalingment in LELE double patterning process. Misalignment is usually considered separately from interconnect structure variations; this incurs too much pessimism and fails to reflect a large increase in total capacitance for asymmetric interconnect structure. We model interconnect corners by taking account of misalignment in conjunction with interconnect structure variations; we also characterize misalignment effect more accurately by handling metal pitch at both sides of a target metal independently. Identifying metal space at both sides of a target metal.

  8. Interfacial fracture resistance of the joint of a solid oxide fuel cell glass-ceramic sealant with metallic interconnect

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Kuang; Shiu, Wei-Hong; Wu, Si-Han; Liu, Chien-Kuo; Lee, Ruey-Yi

    2014-09-01

    Interfacial cracking resistance of a joint between a glass-ceramic sealant (GC-9) and interconnect stainless steel (Crofer 22 H) for planar solid oxide fuel cells is investigated. Interfacial fracture energy is measured at room temperature to 800 °C using a four-point bending test technique. A heat treatment of 100 h or 1000 h at 800 °C is applied for studying the thermal aging effect. Results show the variation trend of interfacial fracture energy with temperature is similar for all given material conditions. Interfacial fracture energy increases with temperature to reach a peak value at 700 °C and then drops at temperature above 700 °C. A 100-h aging treatment does not change the interfacial fracture energy significantly, compared to the non-aged condition. The 1000 h-aged joint, however, has greater interfacial fracture energy than the non-aged and 100 h-aged joints at 700 °C-800 °C. Two types of cracking path in the interior of fracture surface are identified. Firstly, delamination takes place at the interface between the glass-ceramic substrate and chromate layer. Secondly, cracking occurs within the chromate layer. However, for the 1000 h-aged joints tested at 700 °C-800 °C, fracture at the highly oxidized, peripheral regions takes place within the glass-ceramic layer.

  9. Joint strength of a solid oxide fuel cell glass-ceramic sealant with metallic interconnect in a reducing environment

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Kuang; Liu, Yu-An; Wu, Si-Han; Liu, Chien-Kuo; Lee, Ruey-Yi

    2015-04-01

    Effects of reducing environment and thermal aging on the joint strength of a BaO-B2O3-Al2O3-SiO2 glass-ceramic sealant (GC-9) with a ferritic-stainless-steel interconnect (Crofer 22 H) for planar solid oxide fuel cells are investigated. A technique is developed for conducting mechanical tests at room temperature and 800 °C in H2-7 vol% H2O under shear and tensile loadings. Given an aged condition and loading mode, the joint strength at 800 °C is lower than that at room temperature in the given humidified hydrogen atmosphere. A thermal aging at 800 °C in H2-7 vol% H2O for 100 h or 1000 h enhances both shear and tensile joint strengths at room temperature but degrades them at 800 °C in the same reducing environment. Non-aged specimens show a comparable joint strength and fracture mode when tested in humidified hydrogen and in air under a given loading mode and testing temperature. The shear strength at 800 °C for joint specimens after a 1000-h thermal aging at 800 °C in air or humidified hydrogen is reduced by a similar extent of 19%, compared to the counterpart of non-aged joint specimens tested in the same oxidizing or reducing environment.

  10. Advanced Interconnect Development

    SciTech Connect

    Yang, Z.G.; Maupin, G.; Simner, S.; Singh, P.; Stevenson, J.; Xia, G.

    2005-01-27

    The objectives of this project are to develop cost-effective, optimized materials for intermediate temperature SOFC interconnect and interconnect/electrode interface applications and identify and understand degradation processes in interconnects and at their interfaces with electrodes.

  11. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  12. Interconnection networks

    DOEpatents

    Faber, V.; Moore, J.W.

    1988-06-20

    A network of interconnected processors is formed from a vertex symmetric graph selected from graphs GAMMA/sub d/(k) with degree d, diameter k, and (d + 1)exclamation/ (d /minus/ k + 1)exclamation processors for each d greater than or equal to k and GAMMA/sub d/(k, /minus/1) with degree d /minus/ 1, diameter k + 1, and (d + 1)exclamation/(d /minus/ k + 1)exclamation processors for each d greater than or equal to k greater than or equal to 4. Each processor has an address formed by one of the permutations from a predetermined sequence of letters chosen a selected number of letters at a time, and an extended address formed by appending to the address the remaining ones of the predetermined sequence of letters. A plurality of transmission channels is provided from each of the processors, where each processor has one less channel than the selected number of letters forming the sequence. Where a network GAMMA/sub d/(k, /minus/1) is provided, no processor has a channel connected to form an edge in a direction delta/sub 1/. Each of the channels has an identification number selected from the sequence of letters and connected from a first processor having a first extended address to a second processor having a second address formed from a second extended address defined by moving to the front of the first extended address the letter found in the position within the first extended address defined by the channel identification number. The second address is then formed by selecting the first elements of the second extended address corresponding to the selected number used to form the address permutations. 9 figs.

  13. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications.

    PubMed

    Stolyarov, Maxim A; Liu, Guanxiong; Bloodgood, Matthew A; Aytan, Ece; Jiang, Chenglong; Samnakay, Rameez; Salguero, Tina T; Nika, Denis L; Rumyantsev, Sergey L; Shur, Michael S; Bozhilov, Krassimir N; Balandin, Alexander A

    2016-08-25

    We report on the current-carrying capacity of the nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate the mm-long TaSe3 wires with the lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that the TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA cm(-2)-an order-of-magnitude higher than that for copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in a low surface roughness and in the absence of the grain boundaries. These features can potentially enable the downscaling of the nanowires to lateral dimensions in a few-nm range. Our results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects. PMID:27531559

  14. Recent advances on electromigration in very-large-scale-integration of interconnects

    NASA Astrophysics Data System (ADS)

    Tu, K. N.

    2003-11-01

    Today, the price of building a factory to produce submicron size electronic devices on 300 mm Si wafers is over billions of dollars. In processing a 300 mm Si wafer, over half of the production cost comes from fabricating the very-large-scale-integration of the interconnect metallization. The most serious and persistent reliability problem in interconnect metallization is electromigration. In the past 40 years, the microelectronic industry has used Al as the on-chip conductor. Due to miniaturization, however, a better conductor is needed in terms of resistance-capacitance delay, electromigration resistance, and cost of production. The industry has turned to Cu as the on-chip conductor, so the question of electromigration in Cu metallization must be examined. On the basis of what we have learned from the use of Al in devices, we review here what is current with respect to electromigration in Cu. In addition, the system of interconnects on an advanced device includes flip chip solder joints, which now tend to become weak links in the system due to, surprisingly, electromigration. In this review, we compare the electromigration in Al, Cu, and solder on the basis of the ratio of their melting point to the device operating temperature of 100 °C. Accordingly, grain boundary diffusion, surface diffusion, and lattice diffusion dominate, respectively, the electromigration in Al, Cu, and solder. In turn, the effects of microstructure, solute, and stress on electromigration in Al, Cu, and solder are different. The stress induced by electromigration in Cu/low-k interconnects will be a very serious issue since the low-k dielectric (with a value of k around 2) tends to be weak mechanically. In a multilevel interconnect, a electromigration force due to current crowding, acting normal to current flow, has been proposed to explain why many electromigration induced damages occur away from the high current density region. In mean-time-to-failure analysis, the time taken to nucleate

  15. A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

    NASA Technical Reports Server (NTRS)

    Savich, Gregory R.; Simons, Rainee N.

    2006-01-01

    Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

  16. A novel low Cr-containing Fe-Cr-Co alloy for metallic interconnects in planar intermediate temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Zhang, Wenying; Yan, Dong; Yang, Jie; Chen, Jing; Chi, Bo; Pu, Jian; Li, Jian

    2014-12-01

    A newly developed low-Cr containing Fe-Cr-Co alloy, named as FeCro, is evaluated as a candidate material of metallic interconnects for intermediate temperature solid oxide fuel cells (IT-SOFCs). This alloy possesses excellent oxidation resistance and adequate electrical conductivity at 750 °C in air, and shows slight Cr deposition in/around La0.72Sr0.18MnO3(LSM) electrode under a harsh accelerating condition of 400 mA cm-2 and 850 °C. The thickness of the oxide scale thermally grown at 750 °C in air for 1000 his less than 1 μm, presenting a double-layered structure with dense (Mn, Cr)3O4 on the top of Cr2O3. The oxidation kinetics at 750 °C obeys the parabolic law with a low rate constant of1.42 × 10-15 g2 cm-4 s-1. The Cr deposition in/around the LSM electrode in the presence of the FeCro alloy is remarkably reduced, compared to the commercial Crofer 22H alloy. The measured area specific resistance (ASR) at 750 °C in air after 1000 h isothermal oxidation is 14 mΩ cm2. It is the unique microstructure of the formed oxide scale that significantly enhances the resistances of the FeCro alloy to oxidation and Cr volatilization.

  17. Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnection

    NASA Astrophysics Data System (ADS)

    Rang, S.; Chow, R.; Wilson, R. H.; Gorowitz, B.; Williams, A. G.

    1988-05-01

    Process parameters for selective chemical vapor deposition of tungsten to fill vias between aluminum or aluminum alloy multilevel metallization have been identified and demonstrated. By controlling two competing parallel reactions: Aluminum and hydrogen reductions of tungsten hexafluoride in one reduction step process, the specific contact resistivity was found to be in the range of 2.5 to 8.0 x 10-9 ohm-cm2 for 1.8 micron diameter vias. This is at least one order of magnitude lower than the values reported by the previous workers. It was also observed that alloying the aluminum did not appear to affect the contact resistance significantly. In this experiment one cold wall experimental reactor, two cold wall production systems of two different models and one hot wall tube furnace were used to deposit selective CVD tungsten on aluminum or aluminum with 1% silicon first level metal. As a consequence of these findings, problems associated with filling straight wall vias of high aspect ratio in VLSI multilevel interconnection (i.e., high contact resistance, poor step coverage, electromigration, etc.) can now be alleviated or resolved. Therefore, the use of selective CVD tungsten in the existing aluminum IC metallization becomes very attractive and feasible.

  18. Multilevel Model Prediction

    ERIC Educational Resources Information Center

    Frees, Edward W.; Kim, Jee-Seon

    2006-01-01

    Multilevel models are proven tools in social research for modeling complex, hierarchical systems. In multilevel modeling, statistical inference is based largely on quantification of random variables. This paper distinguishes among three types of random variables in multilevel modeling--model disturbances, random coefficients, and future response…

  19. Printed Module Interconnects

    SciTech Connect

    Stockert, Talysa R.; Fields, Jeremy D.; Pach, Gregory F.; Mauger, Scott A.; van Hest, Maikel F. A. M.

    2015-06-14

    Monolithic interconnects in photovoltaic modules connect adjacent cells in series, and are typically formed sequentially involving multiple deposition and scribing steps. Interconnect widths of 500 um every 10 mm result in 5% dead area, which does not contribute to power generation in an interconnected solar panel. This work expands on previous work that introduced an alternative interconnection method capable of producing interconnect widths less than 100 um. The interconnect is added to the module in a single step after deposition of the photovoltaic stack, eliminating the need for scribe alignment. This alternative method can be used for all types of thin film photovoltaic modules. Voltage addition with copper-indium-gallium-diselenide (CIGS) solar cells using a 2-scribe printed interconnect approach is demonstrated. Additionally, interconnect widths of 250 um are shown.

  20. Perforation patterned electrical interconnects

    SciTech Connect

    Frey, Jonathan

    2014-01-28

    This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

  1. Alignability of Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Beech, Russell Scott

    With the continuing drive towards higher speed, density, and functionality in electronics, electrical interconnects become inadequate. Due to optics' high speed and bandwidth, freedom from capacitive loading effects, and freedom from crosstalk, optical interconnects can meet more stringent interconnect requirements. But, an optical interconnect requires additional components, such as an optical source and detector, lenses, holographic elements, etc. Fabrication and assembly of an optical interconnect requires precise alignment of these components. The successful development and deployment of optical interconnects depend on how easily the interconnect components can be aligned and/or how tolerant the interconnect is to misalignments. In this thesis, a method of quantitatively specifying the relative difficulty of properly aligning an optical interconnect is described. Ways of using this theory of alignment to obtain design and packaging guidelines for optical interconnects are examined. The measure of the ease with which an optical interconnect can be aligned, called the alignability, uses the efficiency of power transfer as a measure of alignment quality. The alignability is related to interconnect package design through the overall cost measure, which depends upon various physical parameters of the interconnect, such as the cost of the components and the time required for fabrication and alignment. Through a mutual dependence on detector size, the relationship between an interconnect's alignability and its bandwidth, signal-to-noise ratio, and bit-error -rate is examined. The results indicate that a range of device sizes exists for which given performance threshold values are satisfied. Next, the alignability of integrated planar-optic backplanes is analyzed in detail. The resulting data show that the alignability can be optimized by varying the substrate thickness or the angle of reflection. By including the effects of crosstalk, in a multi-channel backplane, the

  2. Immortality of Cu damascene interconnects

    NASA Astrophysics Data System (ADS)

    Hau-Riege, Stefan P.

    2002-04-01

    We have studied short-line effects in fully-integrated Cu damascene interconnects through electromigration experiments on lines of various lengths and embedded in different dielectric materials. We compare these results with results from analogous experiments on subtractively-etched Al-based interconnects. It is known that Al-based interconnects exhibit three different behaviors, depending on the magnitude of the product of current density, j, and line length, L: For small values of (jL), no void nucleation occurs, and the line is immortal. For intermediate values, voids nucleate, but the line does not fail because the current can flow through the higher-resistivity refractory-metal-based shunt layers. Here, the resistance of the line increases but eventually saturates, and the relative resistance increase is proportional to (jL/B), where B is the effective elastic modulus of the metallization system. For large values of (jL/B), voiding leads to an unacceptably high resistance increase, and the line is considered failed. By contrast, we observed only two regimes for Cu-based interconnects: Either the resistance of the line stays constant during the duration of the experiment, and the line is considered immortal, or the line fails due to an abrupt open-circuit failure. The absence of an intermediate regime in which the resistance saturates is due to the absence of a shunt layer that is able to support a large amount of current once voiding occurs. Since voids nucleate much more easily in Cu- than in Al-based interconnects, a small fraction of short Cu lines fails even at low current densities. It is therefore more appropriate to consider the probability of immortality in the case of Cu rather than assuming a sharp boundary between mortality and immortality. The probability of immortality decreases with increasing amount of material depleted from the cathode, which is proportional to (jL2/B) at steady state. By contrast, the immortality of Al-based interconnects is

  3. Nanotrench for nano and microparticle electrical interconnects

    NASA Astrophysics Data System (ADS)

    Dayen, J.-F.; Faramarzi, V.; Pauly, M.; Kemp, N. T.; Barbero, M.; Pichon, B. P.; Majjad, H.; Begin-Colin, S.; Doudin, B.

    2010-08-01

    We present a simple and versatile patterning procedure for the reliable and reproducible fabrication of high aspect ratio (104) electrical interconnects that have separation distances down to 20 nm and lengths of several hundreds of microns. The process uses standard optical lithography techniques and allows parallel processing of many junctions, making it easily scalable and industrially relevant. We demonstrate the suitability of these nanotrenches as electrical interconnects for addressing micro and nanoparticles by realizing several circuits with integrated species. Furthermore, low impedance metal-metal low contacts are shown to be obtained when trapping a single metal-coated microsphere in the gap, emphasizing the intrinsic good electrical conductivity of the interconnects, even though a wet process is used. Highly resistive magnetite-based nanoparticles networks also demonstrate the advantage of the high aspect ratio of the nanotrenches for providing access to electrical properties of highly resistive materials, with leakage current levels below 1 pA.

  4. Multilevel and Diverse Classrooms

    ERIC Educational Resources Information Center

    Baurain, Bradley, Ed.; Ha, Phan Le, Ed.

    2010-01-01

    The benefits and advantages of classroom practices incorporating unity-in-diversity and diversity-in-unity are what "Multilevel and Diverse Classrooms" is all about. Multilevel classrooms--also known as mixed-ability or heterogeneous classrooms--are a fact of life in ESOL programs around the world. These classrooms are often not only multilevel…

  5. Multilevel Mixture Factor Models

    ERIC Educational Resources Information Center

    Varriale, Roberta; Vermunt, Jeroen K.

    2012-01-01

    Factor analysis is a statistical method for describing the associations among sets of observed variables in terms of a small number of underlying continuous latent variables. Various authors have proposed multilevel extensions of the factor model for the analysis of data sets with a hierarchical structure. These Multilevel Factor Models (MFMs)…

  6. Solar cell array interconnects

    DOEpatents

    Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

    1995-11-14

    Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

  7. Solar cell array interconnects

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    1995-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  8. Laser printed interconnects for flexible electronics

    NASA Astrophysics Data System (ADS)

    Pique, Alberto; Beniam, Iyoel; Mathews, Scott; Charipar, Nicholas

    Laser-induced forward transfer (LIFT) can be used to generate microscale 3D structures for interconnect applications non-lithographically. The laser printing of these interconnects takes place through aggregation of voxels of either molten metal or dispersed metallic nanoparticles. However, the resulting 3D structures do not achieve the bulk conductivity of metal interconnects of the same cross-section and length as those formed by wire bonding or tab welding. It is possible, however, to laser transfer entire structures using a LIFT technique known as lase-and-place. Lase-and-place allows whole components and parts to be transferred from a donor substrate onto a desired location with one single laser pulse. This talk will present the use of LIFT to laser print freestanding solid metal interconnects to connect individual devices into functional circuits. Furthermore, the same laser can bend or fold the thin metal foils prior to transfer, thus forming compliant 3D structures able to provide strain relief due to flexing or thermal mismatch. Examples of these laser printed 3D metallic bridges and their role in the development of next generation flexible electronics by additive manufacturing will be presented. This work was funded by the Office of Naval Research (ONR) through the Naval Research Laboratory Basic Research Program.

  9. Double interconnection fuel cell array

    DOEpatents

    Draper, Robert; Zymboly, Gregory E.

    1993-01-01

    A fuel cell array (10) is made, containing number of tubular, elongated fuel cells (12) which are placed next to each other in rows (A, B, C, D), where each cell contains inner electrodes (14) and outer electrodes (18 and 18'), with solid electrolyte (16 and 16') between the electrodes, where the electrolyte and outer electrode are discontinuous, having two portions, and providing at least two opposed discontinuities which contain at least two oppositely opposed interconnections (20 and 20') contacting the inner electrode (14), each cell (12) having only three metallic felt electrical connectors (22) which contact surrounding cells, where each row is electrically connected to the other.

  10. Micro-fluidic interconnect

    DOEpatents

    Okandan, Murat; Galambos, Paul C.; Benavides, Gilbert L.; Hetherington, Dale L.

    2006-02-28

    An apparatus for simultaneously aligning and interconnecting microfluidic ports is presented. Such interconnections are required to utilize microfluidic devices fabricated in Micro-Electromechanical-Systems (MEMS) technologies, that have multiple fluidic access ports (e.g. 100 micron diameter) within a small footprint, (e.g. 3 mm.times.6 mm). Fanout of the small ports of a microfluidic device to a larger diameter (e.g. 500 microns) facilitates packaging and interconnection of the microfluidic device to printed wiring boards, electronics packages, fluidic manifolds etc.

  11. Multilevel filtering elliptic preconditioners

    NASA Technical Reports Server (NTRS)

    Kuo, C. C. Jay; Chan, Tony F.; Tong, Charles

    1989-01-01

    A class of preconditioners is presented for elliptic problems built on ideas borrowed from the digital filtering theory and implemented on a multilevel grid structure. They are designed to be both rapidly convergent and highly parallelizable. The digital filtering viewpoint allows the use of filter design techniques for constructing elliptic preconditioners and also provides an alternative framework for understanding several other recently proposed multilevel preconditioners. Numerical results are presented to assess the convergence behavior of the new methods and to compare them with other preconditioners of multilevel type, including the usual multigrid method as preconditioner, the hierarchical basis method and a recent method proposed by Bramble-Pasciak-Xu.

  12. Multilevel ensemble Kalman filtering

    DOE PAGESBeta

    Hoel, Hakon; Law, Kody J. H.; Tempone, Raul

    2016-06-14

    This study embeds a multilevel Monte Carlo sampling strategy into the Monte Carlo step of the ensemble Kalman filter (EnKF) in the setting of finite dimensional signal evolution and noisy discrete-time observations. The signal dynamics is assumed to be governed by a stochastic differential equation (SDE), and a hierarchy of time grids is introduced for multilevel numerical integration of that SDE. Finally, the resulting multilevel EnKF is proved to asymptotically outperform EnKF in terms of computational cost versus approximation accuracy. The theoretical results are illustrated numerically.

  13. A multilevel optimization of large-scale dynamic systems

    NASA Technical Reports Server (NTRS)

    Siljak, D. D.; Sundareshan, M. K.

    1976-01-01

    A multilevel feedback control scheme is proposed for optimization of large-scale systems composed of a number of (not necessarily weakly coupled) subsystems. Local controllers are used to optimize each subsystem, ignoring the interconnections. Then, a global controller may be applied to minimize the effect of interconnections and improve the performance of the overall system. At the cost of suboptimal performance, this optimization strategy ensures invariance of suboptimality and stability of the systems under structural perturbations whereby subsystems are disconnected and again connected during operation.

  14. LTCC interconnects in microsystems

    NASA Astrophysics Data System (ADS)

    Rusu, Cristina; Persson, Katrin; Ottosson, Britta; Billger, Dag

    2006-06-01

    Different microelectromechanical system (MEMS) packaging strategies towards high packaging density of MEMS devices and lower expenditure exist both in the market and in research. For example, electrical interconnections and low stress wafer level packaging are essential for improving device performance. Hybrid integration of low temperature co-fired ceramics (LTCC) with Si can be a way for an easier packaging system with integrated electrical interconnection, and as well towards lower costs. Our research on LTCC-Si integration is reported in this paper.

  15. Zee electrical interconnect

    NASA Technical Reports Server (NTRS)

    Rust, Thomas M. (Inventor); Gaddy, Edward M. (Inventor); Herriage, Michael J. (Inventor); Patterson, Robert E. (Inventor); Partin, Richard D. (Inventor)

    2001-01-01

    An interconnect, having some length, that reliably connects two conductors separated by the length of the interconnect when the connection is made but in which one length if unstressed would change relative to the other in operation. The interconnect comprises a base element an intermediate element and a top element. Each element is rectangular and formed of a conducting material and has opposed ends. The elements are arranged in a generally Z-shape with the base element having one end adapted to be connected to one conductor. The top element has one end adapted to be connected to another conductor and the intermediate element has its ends disposed against the other end of the base and the top element. Brazes mechanically and electrically interconnect the intermediate element to the base and the top elements proximate the corresponding ends of the elements. When the respective ends of the base and the top elements are connected to the conductors, an electrical connection is formed therebetween, and when the conductors are relatively moved or the interconnect elements change length the elements accommodate the changes and the associated compression and tension forces in such a way that the interconnect does not mechanically fatigue.

  16. Enabling Inexpensive Metallic Alloys as SOFC Interconnects: An Investigation into Hybrid Coating Technologies to Deposit Nanocomposite Functional Coatings on Ferritic Stainless Steel

    SciTech Connect

    Gannon, Paul; Gorokhovsky, Vladimir I.; Deibert, Max; Smith, Richard J.; Kayani, Asghar N.; White, P T.; Sofie, Stephen W.; Yang, Z Gary; Mccready, David E.; Visco, S.; Jacobson, C.; Kurokawa, H.

    2007-11-01

    Reduced operating temperatures (600-800°C) of Solid Oxide Fuel Cells (SOFCs) may enable the use of inexpensive ferritic steels as interconnects. Due to the demanding SOFC interconnect operating environment, protective coatings are required to increase long-term stability. In this study, large area filtered arc deposition (LAFAD) and hybrid filtered arc-assisted electron beam physical vapor deposition (FA-EBPVD) technologies were used to deposit two-segment coatings with Cr-Al-Y-O nanocomposite bottom segments and Mn-Co-O spinel-based top segments. Coatings were deposited on ferritic steels and subsequently annealed in air for various times. Surface oxidation was investigated using SEM/EDS, XRD and RBS analyses. Cr-volatilization was evaluated by transpiration and ICP-MS analysis of the resultant condensate. Time dependent Area Specific Resistance (ASR) was studied using the four-point technique. The oxidation behavior, Cr volatilization rate, and ASR of coated and uncoated samples are reported. Significant long-term (>1,000 hours) surface stability, low ASR, and dramatically reduced Cr-volatility were observed with the coated specimens. Improvement mechanisms, including the coating diffusion barrier properties and electrical conductivity are discussed.

  17. Viewing Integrated-Circuit Interconnections By SEM

    NASA Technical Reports Server (NTRS)

    Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

    1990-01-01

    Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

  18. Optically interconnected phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Kunath, Richard R.

    1988-01-01

    Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed.

  19. SOFC INTERCONNECT DEVELOPMENT

    SciTech Connect

    Diane M. England

    2003-06-06

    This report summarizes the interconnect work being performed at Delphi. Materials were chosen for this interconnect project were chosen from ferritic and austenitic stainless steels, and nickel-based superalloys. The alloys are thermally cycled in air and a wet hydrogen atmosphere. The oxide scale adherence, electrical resistance and oxidation resistance are determined after long-term oxidation of each alloy. The oxide scale adherence will be observed using a scanning electron microscope. The electrical resistance of the oxidized alloys will be determined using an electrical resistance measurement apparatus which has been designed and is currently being built. Data from the electrical resistance measurement is expected to be provided in the second quarter.

  20. Central American electrical interconnection

    SciTech Connect

    Not Available

    1988-12-01

    A technical cooperation grant of $2.25 million, designed to strengthen the capacity of Central American countries to operate their regional interconnected electrical system, was announced by the Inter-American Development Bank (IDB). The grant, extended from the banks Fund for Special Operations, will help improve the capacity of the regions electric power companies to achieve economical, safe operation of the interconnected electric power systems. The funds will also be used to finance regional studies of the accords, procedures, regulations, and supervisory mechanisms for the system, as well as program development and data bases.

  1. Optical transceivers for interconnections in satellite payloads

    NASA Astrophysics Data System (ADS)

    Karppinen, Mikko; Heikkinen, Veli; Juntunen, Eveliina; Kautio, Kari; Ollila, Jyrki; Sitomaniemi, Aila; Tanskanen, Antti

    2013-02-01

    The increasing data rates and processing on board satellites call for the use of photonic interconnects providing high-bitrate performance as well as valuable savings in mass and volume. Therefore, optical transmitter and receiver technology is developed for aerospace applications. The metal-ceramic-packaging with hermetic fiber pigtails enables robustness for the harsh spacecraft environment, while the 850-nm VCSEL-based transceiver technology meets the high bit-rate and low power requirements. The developed components include 6 Gbps SpaceFibre duplex transceivers for intra-satellite data links and 40 Gbps parallel optical transceivers for board-to-board interconnects. Also, integration concept of interchip optical interconnects for onboard processor ICs is presented.

  2. Open Systems Interconnection.

    ERIC Educational Resources Information Center

    Denenberg, Ray

    1985-01-01

    Discusses the need for standards allowing computer-to-computer communication and gives examples of technical issues. The seven-layer framework of the Open Systems Interconnection (OSI) Reference Model is explained and illustrated. Sidebars feature public data networks and Recommendation X.25, OSI standards, OSI layer functions, and a glossary.…

  3. Interconnecting with VIPs

    ERIC Educational Resources Information Center

    Collins, Robert

    2013-01-01

    Interconnectedness changes lives. It can even save lives. Recently the author got to witness and be part of something in his role as a teacher of primary science that has changed lives: it may even have saved lives. It involved primary science teaching--and the climate. Robert Collins describes how it is all interconnected. The "Toilet…

  4. Capillary interconnect device

    SciTech Connect

    Renzi, Ronald F

    2013-11-19

    An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

  5. CAISSON: Interconnect Network Simulator

    NASA Technical Reports Server (NTRS)

    Springer, Paul L.

    2006-01-01

    Cray response to HPCS initiative. Model future petaflop computer interconnect. Parallel discrete event simulation techniques for large scale network simulation. Built on WarpIV engine. Run on laptop and Altix 3000. Can be sized up to 1000 simulated nodes per host node. Good parallel scaling characteristics. Flexible: multiple injectors, arbitration strategies, queue iterators, network topologies.

  6. Optical Interconnection Networks

    NASA Astrophysics Data System (ADS)

    Bergman, Keren; Hughes, Gary

    2004-07-01

    In current high-performance computing and communications systems an emerging need for ultra-high-capacity, low-latency interconnection networks has led investigators to consider insertion of optical-domain switching fabrics. The use of optical technology for the physical switching layer within data communication systems is clearly advantageous in providing maximum bandwidth per cable particularly through the exploitation of DWDM. Furthermore, the transparency offered in the optical domain allows potentially wide flexibility in the data encoding and protocols. However, many key challenges remain to the successful implementation of optical packet routing, as optical signals cannot be processed efficiently or buffered for an arbitrary time. Clearly, innovative architectures, switching fabrics, and packet processing subsystems that employ optical technologies in synergetic fashions with powerful electronic techniques would be poised to harvest the immense transmission bandwidth of optics creating the ultimate "unlimited-capacity" interconnection network.

  7. Optical Interconnection Networks

    NASA Astrophysics Data System (ADS)

    Bergman, Keren; Hughes, Gary

    2004-05-01

    In current high-performance computing and communications systems an emerging need for ultra-high-capacity, low-latency interconnection networks has led investigators to consider insertion of optical-domain switching fabrics. The use of optical technology for the physical switching layer within data communication systems is clearly advantageous in providing maximum bandwidth per cable particularly through the exploitation of DWDM. Furthermore, the transparency offered in the optical domain allows potentially wide flexibility in the data encoding and protocols. However, many key challenges remain to the successful implementation of optical packet routing, as optical signals cannot be processed efficiently or buffered for an arbitrary time. Clearly, innovative architectures, switching fabrics, and packet processing subsystems that employ optical technologies in synergetic fashions with powerful electronic techniques would be poised to harvest the immense transmission bandwidth of optics creating the ultimate "unlimited-capacity" interconnection network.

  8. Optical Interconnection Networks

    NASA Astrophysics Data System (ADS)

    Bergman, Keren; Hughes, Gary

    2004-06-01

    In current high-performance computing and communications systems an emerging need for ultra-high-capacity, low-latency interconnection networks has led investigators to consider insertion of optical-domain switching fabrics. The use of optical technology for the physical switching layer within data communication systems is clearly advantageous in providing maximum bandwidth per cable particularly through the exploitation of DWDM. Furthermore, the transparency offered in the optical domain allows potentially wide flexibility in the data encoding and protocols. However, many key challenges remain to the successful implementation of optical packet routing, as optical signals cannot be processed efficiently or buffered for an arbitrary time. Clearly, innovative architectures, switching fabrics, and packet processing subsystems that employ optical technologies in synergetic fashions with powerful electronic techniques would be poised to harvest the immense transmission bandwidth of optics creating the ultimate "unlimited-capacity" interconnection network.

  9. Multilevel Interventions: Measurement and Measures

    PubMed Central

    Charns, Martin P.; Alligood, Elaine C.; Benzer, Justin K.; Burgess, James F.; Mcintosh, Nathalie M.; Burness, Allison; Partin, Melissa R.; Clauser, Steven B.

    2012-01-01

    Background Multilevel intervention research holds the promise of more accurately representing real-life situations and, thus, with proper research design and measurement approaches, facilitating effective and efficient resolution of health-care system challenges. However, taking a multilevel approach to cancer care interventions creates both measurement challenges and opportunities. Methods One-thousand seventy two cancer care articles from 2005 to 2010 were reviewed to examine the state of measurement in the multilevel intervention cancer care literature. Ultimately, 234 multilevel articles, 40 involving cancer care interventions, were identified. Additionally, literature from health services, social psychology, and organizational behavior was reviewed to identify measures that might be useful in multilevel intervention research. Results The vast majority of measures used in multilevel cancer intervention studies were individual level measures. Group-, organization-, and community-level measures were rarely used. Discussion of the independence, validity, and reliability of measures was scant. Discussion Measurement issues may be especially complex when conducting multilevel intervention research. Measurement considerations that are associated with multilevel intervention research include those related to independence, reliability, validity, sample size, and power. Furthermore, multilevel intervention research requires identification of key constructs and measures by level and consideration of interactions within and across levels. Thus, multilevel intervention research benefits from thoughtful theory-driven planning and design, an interdisciplinary approach, and mixed methods measurement and analysis. PMID:22623598

  10. Material development of polymer/metal paste for flip-chip attach interconnection technology. Quarterly progress report, December 1, 1995--March 31, 1996

    SciTech Connect

    Saraf, R.F.; Roldan, J.M.; Sambucetti, C.J.

    1996-05-01

    In this report on Polymer/Metal Composite (PMC) adhesive the authors describe two aspects of the material that are crucial to its applicability as a viable material for Flip Chip Attach (FCA) technology. They describe the shelf-life of the material at room temperature and its effect on the adhesion. Then they discuss the electrical and mechanical behavior of PMC bond under strain. It is demonstrated that the bond can be subjected to well over 40% strain with insignificant change in its electrical properties.

  11. Carbon Nanotube Interconnect

    NASA Technical Reports Server (NTRS)

    Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2006-01-01

    Method and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

  12. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    SciTech Connect

    Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-15

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

  13. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    NASA Astrophysics Data System (ADS)

    Chou, Yeong-Shyung; Stevenson, Jeffry W.; Singh, Prabhakar

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO 4 at the outer sealing edges exposed to air.

  14. Recent developments in multilevel optimization

    NASA Technical Reports Server (NTRS)

    Vanderplaats, Garret N.; Kim, D.-S.

    1989-01-01

    Recent developments in multilevel optimization are briefly reviewed. The general nature of the multilevel design task, the use of approximations to develop and solve the analysis design task, the structure of the formal multidiscipline optimization problem, a simple cantilevered beam which demonstrates the concepts of multilevel design and the basic mathematical details of the optimization task and the system level are among the topics discussed.

  15. Electrophoretic deposition of Mn1.5Co1.5O4 on metallic interconnect and interaction with glass-ceramic sealant for solid oxide fuel cells application

    NASA Astrophysics Data System (ADS)

    Smeacetto, Federico; De Miranda, Auristela; Cabanas Polo, Sandra; Molin, Sebastian; Boccaccini, Dino; Salvo, Milena; Boccaccini, Aldo R.

    2015-04-01

    Cr-containing stainless steels are widely used as metallic interconnects for SOFCs. Volatile Cr-containing species, which originate from the oxide formed on steel, can poison the cathode material and subsequently cause degradation in the SOFC stack. Mn1.5Co1.5O4 spinel is one of the most promising coating materials due to its high electrical conductivity, good CTE match with the stainless steel substrate and an excellent chromium retention capability. In this work Mn1.5Co1.5O4 spinel coatings are deposited on Crofer22APU substrates by cathodic electrophoretic deposition (EPD) followed by sintering at 800-1150 °C in different atmospheres. Dense, continuous and crack free Mn1.5Co1.5O4 coatings (with thickness ranging from 10 to 40 μm) are obtained on Crofer22APU substrates. Moreover, electrical properties of the coated Crofer22APU alloy are tested up to 2500 h and an excellent compatibility is found between Mn1.5Co1.5O4 coated Crofer22APU and a new glass-ceramic sealant, after 500 h of thermal tests in air, thus suggesting that the spinel protection layer can effectively act as a barrier to outward diffusion of Cr.

  16. Fully-integrated, bezel-less transistor arrays using reversibly foldable interconnects and stretchable origami substrates.

    PubMed

    Kim, Mijung; Park, Jihun; Ji, Sangyoon; Shin, Sung-Ho; Kim, So-Yun; Kim, Young-Cheon; Kim, Ju-Young; Park, Jang-Ung

    2016-05-14

    Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints. PMID:27101972

  17. Polymeric optoelectronic interconnects

    NASA Astrophysics Data System (ADS)

    Eldada, Louay A.

    2000-04-01

    Electrical interconnects are reaching their fundamental limits and are becoming the speed bottleneck as processor speeds are increasing. A polymer-based interconnect technology was developed for affordable integrated optical circuits that address the optical signal processing needs in the telecom, datacom, and performance computing industries. We engineered organic polymers that can be readily made into single-mode, multimode, and micro-optical waveguide structures of controlled numerical apertures and geometries. These materials are formed from highly-crosslinked acrylate monomers with specific linkages that determine properties such as flexibility, robustness, optical loss, thermal stability, and humidity resistance. These monomers are intermiscible, providing for precise continuous adjustment of the refractive index over a wide range. In polymer form, they exhibit state-of-the-art loss values and exceptional environmental stability, enabling use in a variety of demanding applications. A wide range of rigid and flexible substrates can be used, including glass, quartz, silicon, glass-filled epoxy printed circuit board substrates, and flexible plastic films. The devices we describe include a variety of routing elements that can be sued as part of a massively parallel photonic integrated circuit on the MCM, board, or backplane level.

  18. Policy issues in interconnecting networks

    NASA Technical Reports Server (NTRS)

    Leiner, Barry M.

    1989-01-01

    To support the activities of the Federal Research Coordinating Committee (FRICC) in creating an interconnected set of networks to serve the research community, two workshops were held to address the technical support of policy issues that arise when interconnecting such networks. The workshops addressed the required and feasible technologies and architectures that could be used to satisfy the desired policies for interconnection. The results of the workshop are documented.

  19. Fuel cell system with interconnect

    SciTech Connect

    Liu, Zhien; Goettler, Richard

    2015-09-29

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  20. Fuel cell system with interconnect

    SciTech Connect

    Goettler, Richard; Liu, Zhien

    2015-08-11

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  1. Fuel cell system with interconnect

    SciTech Connect

    Goettler, Richard; Liu, Zhien

    2015-03-10

    The present invention includes a fuel cell system having a plurality of adjacent electrochemical cells formed of an anode layer, a cathode layer spaced apart from the anode layer, and an electrolyte layer disposed between the anode layer and the cathode layer. The fuel cell system also includes at least one interconnect, the interconnect being structured to conduct free electrons between adjacent electrochemical cells. Each interconnect includes a primary conductor embedded within the electrolyte layer and structured to conduct the free electrons.

  2. Resistive synaptic interconnects for electronic neural networks

    NASA Technical Reports Server (NTRS)

    Lamb, J. L.; Thakoor, A. P.; Moopenn, A.; Khanna, S. K.

    1987-01-01

    The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

  3. Probabilistic immortality of Cu damascene interconnects

    NASA Astrophysics Data System (ADS)

    Hau-Riege, Stefan P.

    2002-02-01

    We have studied electromigration short-line effects in Cu damascene interconnects through experiments on lines of various lengths L, stressed at a variety of current densities j, and embedded in different dielectric materials. We observed two modes of resistance evolution: Either the resistance of the lines remains constant for the duration of the test, so that the lines are considered immortal, or the lines fail due to abrupt open-circuit failure. The resistance was not observed to gradually increase and then saturate, as commonly observed in Al-based interconnects, because the barrier is too thin and resistive to serve as a redundant current path should voiding occur. The critical stress for void nucleation was found to be smaller than 41 MPa, since voiding occurred even under the mildest test conditions of j=2 MA/cm2 and L=10.5 μm at 300 °C. A small fraction of short Cu lines failed even at low current densities, which deems necessary a concept of probabilistic immortality rather than deterministic immortality. Experiments and modeling suggest that the probability of immortality is described by (jL2/B), where B is the effective elastic modulus of the metallization scheme. By contrast, the immortality of Al-based interconnects with shunt layers is described by (jL) if no voids nucleate, and (jL/B) if voids do nucleate. Even though the phenomenology of short-line effects differs for Al- and Cu-based interconnects, the immortality of interconnects of either materials system can be explained by the phenomena of nucleation barriers for void formation and void-growth saturation. The differences are due solely to the absence of a shunt layer and the low critical stress for void nucleation in the case of Cu.

  4. Copper Nanowire Production for Interconnect Applications

    NASA Technical Reports Server (NTRS)

    Han, Jin-Woo (Inventor); Meyyappan, Meyya (Inventor)

    2014-01-01

    A method of fabricating metallic Cu nanowires with lengths up to about 25 micrometers and diameters in a range 20-100 nanometers, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 micrometers), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nanometers. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).

  5. A Primer on Multilevel Modeling

    ERIC Educational Resources Information Center

    Hayes, Andrew F.

    2006-01-01

    Multilevel modeling (MLM) is growing in use throughout the social sciences. Although daunting from a mathematical perspective, MLM is relatively easy to employ once some basic concepts are understood. In this article, I present a primer on MLM, describing some of these principles and applying them to the analysis of a multilevel data set on…

  6. Multilevel Modeling of Social Segregation

    ERIC Educational Resources Information Center

    Leckie, George; Pillinger, Rebecca; Jones, Kelvyn; Goldstein, Harvey

    2012-01-01

    The traditional approach to measuring segregation is based upon descriptive, non-model-based indices. A recently proposed alternative is multilevel modeling. The authors further develop the argument for a multilevel modeling approach by first describing and expanding upon its notable advantages, which include an ability to model segregation at a…

  7. QUILD: QUantum-regions interconnected by local descriptions.

    PubMed

    Swart, Marcel; Bickelhaupt, F Matthias

    2008-04-15

    A new program for multilevel (QM/QM and/or QM/MM) approaches is presented that is able to combine different computational descriptions for different regions in a transparent and flexible manner. This program, designated QUILD (for QUantum-regions Interconnected by Local Descriptions), uses adapted delocalized coordinates (Int J Quantum Chem 2006, 106, 2536) for efficient geometry optimizations of equilibrium and transition-state structures, where both weak and strong coordinates may be present. The Amsterdam Density Functional (ADF) program is used for providing density functional theory and MM energies and gradients, while an interface to the ORCA program is available for including RHF, MP2, or semiempirical descriptions. The QUILD optimization setup reduces the number of geometry steps needed for the Baker test-set of 30 organic molecules by approximately 30% and for a weakly-bound test-set of 18 molecules by approximately 75% compared with the old-style optimizer in ADF, i.e., a speedup of roughly a factor four. We report two examples of using geometry optimizations with numerical gradients, for spin-orbit relativistic ZORA and for excited-state geometries. Finally, we show examples of its multilevel capabilities for a number of systems, including the multilevel boundary region of amino acid residues, an S(N)2 reaction in the gas-phase and in solvent, and a DNA duplex. PMID:17902157

  8. Stress-induced voiding study in integrated circuit interconnects

    NASA Astrophysics Data System (ADS)

    Hou, Yuejin; Tan, Cher Ming

    2008-07-01

    An analytical equation for an ultralarge-scale integration interconnect lifetime due to stress-induced voiding (SIV) is derived from the energy perspective. It is shown that the SIV lifetime is strongly dependent on the passivation quality at the cap layer/interconnect interface, the confinement effect by the surrounding materials to the interconnects, and the available diffusion paths in the interconnects. Contrary to the traditional power-law creep model, we find that the temperature exponent in SIV lifetime formulation is determined by the available diffusion paths for the interconnect atoms and the interconnect geometries. The critical temperature for the SIV is found to be independent of passivation integrity and dielectric confinement effect. Actual stress-free temperature (SFT) during the SIV process is also found to be different from the dielectric/cap layer deposition temperature or the final annealing temperature of the metallization, and it can be evaluated analytically once the activation energy, temperature exponent and critical temperature are determined experimentally. The smaller actual SFT indicates that a strong stress relaxation occurs before the high temperature storage test. Our results show that our SIV lifetime model can be used to predict the SIV lifetime in nano-interconnects.

  9. Solder joint reliability of indium-alloy interconnection

    NASA Astrophysics Data System (ADS)

    Shimizu, Kozo; Nakanishi, Teru; Karasawa, Kazuaki; Hashimoto, Kaoru; Niwa, Koichi

    1995-01-01

    Recent high-density very large scale integrated (VLSI) interconnections in multichip modules require high-reliability solder interconnection to enable us to achieve small interconnect size andlarge number of input/output terminals, and to minimize soft errors in VLSIs induced by α-particle emission from solder. Lead-free solders such as indium (In)-alloy solders are a possible alternative to conventional lead-tin (Pb-Sn) solders. To realize reliable interconnections using In-alloy solders, fatigue behavior, finite element method (FEM) simulations, and dissolution and reaction between solder and metallization were studied with flip-chip interconnection models. We measured the fatigue life of solder joints and the mechanical properties of solders, and compared the results with a computer simulation based on the FEM. Indium-alloy solders have better mechanical properties for solder joints, and their flip-chip interconnection models showed a longer fatigue life than that of Pb-Sn solder in thermal shock tests between liquid nitrogen and room temperatures. The fatigue characteristics obtained by experiment agree with that given by FEM analysis. Dissolution tests show that Pt film is resistant to dissolution into In solder, indicating that Pt is an adequate barrier layer material for In solder. This test also shows that Au dissolution into the In-Sn solder raises its melting point; however, Ag addition to In-Sn solder prevents melting point rise. Experimental results show that In-alloy solders are suitable for fabricating reliable interconnections.

  10. Process for electrically interconnecting electrodes

    DOEpatents

    Carey, Paul G.; Thompson, Jesse B.; Colella, Nicolas J.; Williams, Kenneth A.

    2002-01-01

    Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb--Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb--Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

  11. Controlled fracture of Cu/ultralow-k interconnects

    NASA Astrophysics Data System (ADS)

    Li, Han; Kobrinsky, Mauro J.; Shariq, Ahmed; Richards, John; Liu, Jimmy; Kuhn, Markus

    2013-12-01

    Mechanical failures of on-chip interconnects in the forms of delamination and cracking are among the most critical challenges for integrating ultralow-dielectric-constant (ultralow-"k") materials in advanced integrated circuits. Designing a mechanically robust interconnect stack against fabrication and packaging stresses requires quantitative characterization of the fracture properties of the integrated structure and its component materials. In this Letter, we demonstrate a simple method to control crack propagation in Cu/ultralow-k interconnect and thereby extract the fracture properties of the metal vias and interlayer dielectrics from integrated structures. Important implications of the method are discussed for interconnect technology development and for fundamental study of fracture behaviors of materials having nano-scale structures.

  12. Supramolecular Organic Nanowires as Plasmonic Interconnects.

    PubMed

    Armao, Joseph J; Domoto, Yuya; Umehara, Teruhiko; Maaloum, Mounir; Contal, Christophe; Fuks, Gad; Moulin, Emilie; Decher, Gero; Javahiraly, Nicolas; Giuseppone, Nicolas

    2016-02-23

    Metallic nanostructures are able to interact with an incident electromagnetic field at subwavelength scales by plasmon resonance which involves the collective oscillation of conduction electrons localized at their surfaces. Among several possible applications of this phenomenon, the theoretical prediction is that optical circuits connecting multiple plasmonic elements will surpass classical electronic circuits at nanoscale because of their much faster light-based information processing. However, the placement and coupling of metallic elements smaller than optical wavelengths currently remain a formidable challenge by top-down manipulations. Here, we show that organic supramolecular triarylamine nanowires of ≈1 nm in diameter are able to act as plasmonic waveguides. Their self-assembly into plasmonic interconnects between arrays of gold nanoparticles leads to the bottom-up construction of basic optical nanocircuits. When the resonance modes of these metallic nanoparticles are coupled through the organic nanowires, the optical conductivity of the plasmonic layer dramatically increases from 259 to 4271 Ω(-1)·cm(-1). We explain this effect by the coupling of a hot electron/hole pair in the nanoparticle antenna with the half-filled polaronic band of the organic nanowire. We also demonstrate that the whole hybrid system can be described by using the abstraction of the lumped circuit theory, with a far field optical response which depends on the number of interconnects. Overall, our supramolecular bottom-up approach opens the possibility to implement processable, soft, and low cost organic plasmonic interconnects into a large number of applications going from sensing to metamaterials and information technologies. PMID:26814600

  13. Method of doping interconnections for electrochemical cells

    DOEpatents

    Pal, Uday B.; Singhal, Subhash C.; Moon, David M.; Folser, George R.

    1990-01-01

    A dense, electronically conductive interconnection layer 26 is bonded on a porous, tubular, electronically conductive air electrode structure 16, optionally supported by a ceramic support 22, by (A) forming a layer of oxide particles of at least one of the metals Ca, Sr, Co, Ba or Mg on a part 24 of a first surface of the air electrode 16, (B) heating the electrode structure, (C) applying a halide vapor containing at least lanthanum halide and chromium halide to the first surface and applying a source of oxygen to a second opposite surface of the air electrode so that they contact at said first surface, to cause a reaction of the oxygen and halide and cause a dense lanthanum-chromium oxide structure to grow, from the first electrode surface, between and around the oxide particles, where the metal oxide particles get incoporated into the lanthanum-chromium oxide structure as it grows thicker with time, and the metal ions in the oxide particles diffuse into the bulk of the lanthamum-chromium oxide structure, to provide a dense, top, interconnection layer 26 on top of the air electrode 16. A solid electrolyte layer 18 can be applied to the uncovered portion of the air electrode, and a fuel electrode 20 can be applied to the solid electrolyte, to provide an electrochemical cell 10.

  14. Growing Aligned Carbon Nanotubes for Interconnections in ICs

    NASA Technical Reports Server (NTRS)

    Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M.

    2005-01-01

    A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by

  15. Fulvalene- and polyarene-transition metal-carborane complexes as building blocks for multilevel arrays. Stepwise synthesis and structural characterization of polymetallic linked sandwiches

    SciTech Connect

    Davis, J.H. Jr.; Sinn, E.; Grimes, R.N. )

    1989-06-21

    The designed synthesis and structural elucidation of a series of linked double-decker and triple-decker arene-metal carborane complexes, in which the sandwich moieties are linked either directly or via bridging phenylene or biphenylene groups, are reported. The reaction of fulvalenide dianion ((C{sub 5}H{sub 4}){sub 2}{sup 2{minus}}) with CoCl{sub 2} and the Et{sub 2}C{sub 2}B{sub 4}H{sub 5}{sup {minus}} ion generated ((Et{sub 2}C{sub 2}B{sub 4}H{sub 4})Co(C{sub 5}H{sub 4})){sub 2} (1), the first known fulvalene-metal-carborane sandwich species, as air-stable orange crystals. Double-decapitation (removal of the apex BH units) of 1 gave yellow air-stable ((Et{sub 2}C{sub 2}B{sub 3}H{sub 5})Co(C{sub 5}H{sub 4})){sub 2} (3). The interaction of the 1,4-bis(tetramethylcyclopentadienyl)phenylene dianion (Me{sub 4}C{sub 5}-C{sub 6}H{sub 4}-C{sub 5}Me{sub 4}){sup 2{minus}} with CoCl{sub 2} and the carborane ion produced orange ((Et{sub 2}C{sub 2}B{sub 4}H{sub 4})Co(C{sub 5}Me{sub 4})){sub 2}C{sub 6}H{sub 4} (4), which on double-decapitation gave yellow ((Et{sub 2}C{sub 2}B{sub 3}H{sub 5})Co(C{sub 5}Me{sub 4})){sub 2}C{sub 6}H{sub 4} (6), both compounds isolated as air-stable crystals. Similar treatment of the (Me{sub 4}C{sub 5}-(C{sub 6}H{sub 4}){sub 2}-C{sub 5}Me{sub 4}){sup 2{minus}} dianion gave orange crystals of ((Et{sub 2}C{sub 2}B{sub 4}H{sub 4})Co(C{sub 5}Me{sub 4})){sub 2} (7), which was decapitated to generate yellow ((Et{sub 2}C{sub 2}B{sub 3}H{sub 5})Co(C{sub 5}Me{sub 4})){sub 2}(C{sub 6}H{sub 4}){sub 2} (9); again both species are air-stable.

  16. Interconnecting heterogeneous database management systems

    NASA Technical Reports Server (NTRS)

    Gligor, V. D.; Luckenbaugh, G. L.

    1984-01-01

    It is pointed out that there is still a great need for the development of improved communication between remote, heterogeneous database management systems (DBMS). Problems regarding the effective communication between distributed DBMSs are primarily related to significant differences between local data managers, local data models and representations, and local transaction managers. A system of interconnected DBMSs which exhibit such differences is called a network of distributed, heterogeneous DBMSs. In order to achieve effective interconnection of remote, heterogeneous DBMSs, the users must have uniform, integrated access to the different DBMs. The present investigation is mainly concerned with an analysis of the existing approaches to interconnecting heterogeneous DBMSs, taking into account four experimental DBMS projects.

  17. Multilevel DC link inverter

    DOEpatents

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  18. Parallel multilevel preconditioners

    SciTech Connect

    Bramble, J.H.; Pasciak, J.E.; Xu, Jinchao.

    1989-01-01

    In this paper, we shall report on some techniques for the development of preconditioners for the discrete systems which arise in the approximation of solutions to elliptic boundary value problems. Here we shall only state the resulting theorems. It has been demonstrated that preconditioned iteration techniques often lead to the most computationally effective algorithms for the solution of the large algebraic systems corresponding to boundary value problems in two and three dimensional Euclidean space. The use of preconditioned iteration will become even more important on computers with parallel architecture. This paper discusses an approach for developing completely parallel multilevel preconditioners. In order to illustrate the resulting algorithms, we shall describe the simplest application of the technique to a model elliptic problem.

  19. Renewable Systems Interconnection: Executive Summary

    SciTech Connect

    Kroposki, B.; Margolis, R.; Kuswa, G.; Torres, J.; Bower, W.; Key, T.; Ton, D.

    2008-02-01

    The U.S. Department of Energy launched the Renewable Systems Interconnection (RSI) study in 2007 to address the challenges to high penetrations of distributed renewable energy technologies. The RSI study consists of 14 additional reports.

  20. Multilevel techniques for nonelliptic problems

    NASA Technical Reports Server (NTRS)

    Jespersen, D. C.

    1981-01-01

    Multigrid and multilevel methods are extended to the solution of nonelliptic problems. A framework for analyzing these methods is established. A simple nonelliptic problem is given, and it is shown how a multilevel technique can be used for its solution. Emphasis is on smoothness properties of eigenvectors and attention is drawn to the possibility of conditioning the eigensystem so that eigenvectors have the desired smoothness properties.

  1. Development of Ceramic Interconnect Materials for SOFC

    SciTech Connect

    Yoon, Kyung J.; Stevenson, Jeffry W.; Marina, Olga A.

    2010-08-05

    Currently, acceptor-doped lanthanum chromite is the state-of-the-art ceramic interconnect material for high temperature solid oxide fuel cells (SOFCs) due to its fairly good electronic conductivity and chemical stability in both oxidizing and reducing atmospheres, and thermal compatibility with other cell components. The major challenge for acceptor-doped lanthanum chromite for SOFC interconnect applications is its inferior sintering behavior in air, which has been attributed to the development of a thin layer of Cr2O3 at the interparticle necks during the initial stages of sintering. In addition, lanthanum chromite is reactive with YSZ electrolyte at high temperatures, forming a highly resistive lanthanum zirconate phase (La2Zr2O7), which further complicates co-firing processes. Acceptor-doped yttrium chromite is considered to be one of the promising alternatives to acceptor-doped lanthanum chromite because it is more stable with respect to the formation of hydroxides in SOFC operating conditions, and the formation of impurity phases can be effectively avoided at co-firing temperatures. In addition, calcium-doped yttrium chromite exhibits higher mechanical strength than lanthanum chromite-based materials. The major drawback of yttrium chromite is considered to be its lower electrical conductivity than lanthanum chromite. The properties of yttrium chromites could possibly be improved and optimized by partial substitution of chromium with various transition metals. During FY10, PNNL investigated the effect of various transition metal doping on chemical stability, sintering and thermal expansion behavior, microstructure, electronic and ionic conductivity, and chemical compatibility with other cell components to develop the optimized ceramic interconnect material.

  2. Cantilevered multilevel LIGA devices and methods

    DOEpatents

    Morales, Alfredo Martin; Domeier, Linda A.

    2002-01-01

    In the formation of multilevel LIGA microstructures, a preformed sheet of photoresist material, such as polymethylmethacrylate (PMMA) is patterned by exposure through a mask to radiation, such as X-rays, and developed using a developer to remove the exposed photoresist material. A first microstructure is then formed by electroplating metal into the areas from which the photoresist has been removed. Additional levels of microstructure are added to the initial microstructure by covering the first microstructure with a conductive polymer, machining the conductive polymer layer to reveal the surface of the first microstructure, sealing the conductive polymer and surface of the first microstructure with a metal layer, and then forming the second level of structure on top of the first level structure. In such a manner, multiple layers of microstructure can be built up to allow complex cantilevered microstructures to be formed.

  3. Janus microspheres for visual assessment of molecular interconnects.

    PubMed

    Fliedel, Christophe; Faramarzi, Vina; Rosa, Vitor; Doudin, Bernard; Braunstein, Pierre

    2014-01-27

    A rigid S-functionalized metalloligand is used to pair Janus Au-coated silica microspheres and the resulting assemblies are assessed with optical microscopy. New Pd complexes provide stable molecular interconnects, and the metal centre controls the structure of the linker and provides the desired rigidity, by virtue of its well-established coordination chemistry. PMID:24382696

  4. Misalignment corrections in optical interconnects

    NASA Astrophysics Data System (ADS)

    Song, Deqiang

    Optical interconnects are considered a promising solution for long distance and high bitrate data transmissions, outperforming electrical interconnects in terms of loss and dispersion. Due to the bandwidth and distance advantage of optical interconnects, longer links have been implemented with optics. Recent studies show that optical interconnects have clear advantages even at very short distances---intra system interconnects. The biggest challenge for such optical interconnects is the alignment tolerance. Many free space optical components require very precise assembly and installation, and therefore the overall cost could be increased. This thesis studied the misalignment tolerance and possible alignment correction solutions for optical interconnects at backplane or board level. First the alignment tolerance for free space couplers was simulated and the result indicated the most critical alignments occur between the VCSEL, waveguide and microlens arrays. An in-situ microlens array fabrication method was designed and experimentally demonstrated, with no observable misalignment with the waveguide array. At the receiver side, conical lens arrays were proposed to replace simple microlens arrays for a larger angular alignment tolerance. Multilayer simulation models in CodeV were built to optimized the refractive index and shape profiles of the conical lens arrays. Conical lenses fabricated with micro injection molding machine and fiber etching were characterized. Active component VCSOA was used to correct misalignment in optical connectors between the board and backplane. The alignment correction capability were characterized for both DC and AC (1GHz) optical signal. The speed and bandwidth of the VCSOA was measured and compared with a same structure VCSEL. Based on the optical inverter being studied in our lab, an all-optical flip-flop was demonstrated using a pair of VCSOAs. This memory cell with random access ability can store one bit optical signal with set or

  5. Multilevel fusion exploitation

    NASA Astrophysics Data System (ADS)

    Lindberg, Perry C.; Dasarathy, Belur V.; McCullough, Claire L.

    1996-06-01

    This paper describes a project that was sponsored by the U.S. Army Space and Strategic Defense Command (USASSDC) to develop, test, and demonstrate sensor fusion algorithms for target recognition. The purpose of the project was to exploit the use of sensor fusion at all levels (signal, feature, and decision levels) and all combinations to improve target recognition capability against tactical ballistic missile (TBM) targets. These algorithms were trained with simulated radar signatures to accurately recognize selected TBM targets. The simulated signatures represent measurements made by two radars (S-band and X- band) with the targets at a variety of aspect and roll angles. Two tests were conducted: one with simulated signatures collected at angles different from those in the training database and one using actual test data. The test results demonstrate a high degree of recognition accuracy. This paper describes the training and testing techniques used; shows the fusion strategy employed; and illustrates the advantages of exploiting multi-level fusion.

  6. Multilevel turbulence simulations

    SciTech Connect

    Tziperman, E.

    1994-12-31

    The authors propose a novel method for the simulation of turbulent flows, that is motivated by and based on the Multigrid (MG) formalism. The method, called Multilevel Turbulence Simulations (MTS), is potentially more efficient and more accurate than LES. In many physical problems one is interested in the effects of the small scales on the larger ones, or in a typical realization of the flow, and not in the detailed time history of each small scale feature. MTS takes advantage of the fact that the detailed simulation of small scales is not needed at all times, in order to make the calculation significantly more efficient, while accurately accounting for the effects of the small scales on the larger scale of interest. In MTS, models of several resolutions are used to represent the turbulent flow. The model equations in each coarse level incorporate a closure term roughly corresponding to the tau correction in the MG formalism that accounts for the effects of the unresolvable scales on that grid. The finer resolution grids are used only a small portion of the simulation time in order to evaluate the closure terms for the coarser grids, while the coarse resolution grids are then used to accurately and efficiently calculate the evolution of the larger scales. The methods efficiency relative to direct simulations is of the order of the ratio of required integration time to the smallest eddies turnover time, potentially resulting in orders of magnitude improvement for a large class of turbulence problems.

  7. Novel structures in ceramic interconnect technology.

    SciTech Connect

    Peterson, Kenneth Allen; Rohde, Steven Barney; Casias, Adrian Luther; Stokes, Robert Neal; Turner, Timothy Shawn

    2003-02-01

    Ceramic interconnect technology has been adapted to new structures. In particular, the ability to customize processing order and material choices in Low Temperature Cofired Ceramic (LTCC) has enabled new features to be constructed, which address needs in MEMS packaging as well as other novel structures. Unique shapes in LTCC permit the simplification of complete systems, as in the case of a miniature ion mobility spectrometer (IMS). In this case, a rolled tube has been employed to provide hermetic external contacts to electrodes and structures internal to the tube. Integral windows in LTCC have been fabricated for use in both lids and circuits where either a short term need for observation or a long-term need for functionality exists. These windows are fabricated without adhesive, are fully compatible with LTCC processing, and remain optically clear. Both vented and encapsulated functional volumes have been fabricated using a sacrificial material technique. These hold promise for self-assembly of systems, as well as complex internal structures in cavities, micro fluidic and optical channels, and multilevel integration techniques. Separation of the burnout and firing cycles has permitted custom internal environments to be established. Existing commercial High Temperature Cofired Ceramic (HTCC) and LTCC systems can also be rendered to have improved properties. A rapid prototyping technique for patterned HTCC packages has permitted prototypes to be realized in a few days, and has further applications to micro fluidics, heat pipes, and MEMS, among others. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000.

  8. Manufacturing of planar ceramic interconnects

    SciTech Connect

    Armstrong, B.L.; Coffey, G.W.; Meinhardt, K.D.; Armstrong, T.R.

    1996-12-31

    The fabrication of ceramic interconnects for solid oxide fuel cells (SOFC) and separator plates for electrochemical separation devices has been a perennial challenge facing developers. Electrochemical vapor deposition (EVD), plasma spraying, pressing, tape casting and tape calendering are processes that are typically utilized to fabricate separator plates or interconnects for the various SOFC designs and electrochemical separation devices. For sake of brevity and the selection of a planar fuel cell or gas separation device design, pressing will be the only fabrication technique discussed here. This paper reports on the effect of the characteristics of two doped lanthanum manganite powders used in the initial studies as a planar porous separator for a fuel cell cathode and as a dense interconnect for an oxygen generator.

  9. Fully-integrated, bezel-less transistor arrays using reversibly foldable interconnects and stretchable origami substrates

    NASA Astrophysics Data System (ADS)

    Kim, Mijung; Park, Jihun; Ji, Sangyoon; Shin, Sung-Ho; Kim, So-Yun; Kim, Young-Cheon; Kim, Ju-Young; Park, Jang-Ung

    2016-05-01

    Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints.Here we demonstrate fully-integrated, bezel-less transistor arrays using stretchable origami substrates and foldable conducting interconnects. Reversible folding of these arrays is enabled by origami substrates which are composed of rigid support fixtures and foldable elastic joints. In addition, hybrid structures of thin metal films and metallic nanowires worked as foldable interconnects which are located on the elastomeric joints. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02041k

  10. Is there a “school effect” on pupil outcomes? A review of multilevel studies

    PubMed Central

    Sellström, E; Bremberg, S

    2006-01-01

    Study objective The school environment is of importance for child outcomes. Multilevel analyses can separate determinants operating at an individual level from those operating at a contextual level. This paper aims to systematically review multilevel studies of school contextual effects on pupil outcomes. Design Key word searching of five databases yielded 17 cross sectional or longitudinal studies meeting the inclusion criteria. Results are summarised with reference to type of school contextual determinant. Main results Four main school effects on pupil outcomes were identified. Having a health policy or antismoking policy, a good school climate, high average socioeconomic status, and urban location had a positive effect on pupil outcomes. Outcomes under study were smoking habits, wellbeing, problem behaviour, and school achievement. Conclusions Despite the different pupil outcomes and the variety of determinants used in the included papers, a school effect was evident. However, to improve our understanding of school effects, presentations of results from multilevel studies need to be standardised. Intraclass correlation and explained between school variance give relevant information on factors in the school environment influencing pupil outcomes, and should be included in all multilevel studies. Inclusion of pupil level predictors in the multilevel models should be based on theoretical considerations of how schools and communities are interconnected and how pupils and their families are influenced by school contextual factors. PMID:16415266

  11. Multilevel codes and multistage decoding

    NASA Astrophysics Data System (ADS)

    Calderbank, A. R.

    1989-03-01

    Imai and Hirakawa have proposed (1977) a multilevel coding method based on binary block codes that admits a staged decoding procedure. Here the coding method is extended to coset codes and it is shown how to calculate minimum squared distance and path multiplicity in terms of the norms and multiplicities of the different cosets. The multilevel structure allows the redundancy in the coset selection procedure to be allocated efficiently among the different levels. It also allows the use of suboptimal multistage decoding procedures that have performance/complexity advantages over maximum-likelihood decoding.

  12. Multilevel Ensemble Transform Particle Filtering

    NASA Astrophysics Data System (ADS)

    Gregory, Alastair; Cotter, Colin; Reich, Sebastian

    2016-04-01

    This presentation extends the Multilevel Monte Carlo variance reduction technique to nonlinear filtering. In particular, Multilevel Monte Carlo is applied to a certain variant of the particle filter, the Ensemble Transform Particle Filter (ETPF). A key aspect is the use of optimal transport methods to re-establish correlation between coarse and fine ensembles after resampling; this controls the variance of the estimator. Numerical examples present a proof of concept of the effectiveness of the proposed method, demonstrating significant computational cost reductions (relative to the single-level ETPF counterpart) in the propagation of ensembles.

  13. Simulation of void formation in interconnect lines

    NASA Astrophysics Data System (ADS)

    Sheikholeslami, Alireza; Heitzinger, Clemens; Puchner, Helmut; Badrieh, Fuad; Selberherr, Siegfried

    2003-04-01

    The predictive simulation of the formation of voids in interconnect lines is important for improving capacitance and timing in current memory cells. The cells considered are used in wireless applications such as cell phones, pagers, radios, handheld games, and GPS systems. In backend processes for memory cells, ILD (interlayer dielectric) materials and processes result in void formation during gap fill. This approach lowers the overall k-value of a given metal layer and is economically advantageous. The effect of the voids on the overall capacitive load is tremendous. In order to simulate the shape and positions of the voids and thus the overall capacitance, the topography simulator ELSA (Enhanced Level Set Applications) has been developed which consists of three modules, a level set module, a radiosity module, and a surface reaction module. The deposition process considered is deposition of silicon nitride. Test structures of interconnect lines of memory cells were fabricated and several SEM images thereof were used to validate the corresponding simulations.

  14. A General Multilevel SEM Framework for Assessing Multilevel Mediation

    ERIC Educational Resources Information Center

    Preacher, Kristopher J.; Zyphur, Michael J.; Zhang, Zhen

    2010-01-01

    Several methods for testing mediation hypotheses with 2-level nested data have been proposed by researchers using a multilevel modeling (MLM) paradigm. However, these MLM approaches do not accommodate mediation pathways with Level-2 outcomes and may produce conflated estimates of between- and within-level components of indirect effects. Moreover,…

  15. Modeling and experimental characterization of electromigration in interconnect trees

    NASA Astrophysics Data System (ADS)

    Thompson, C. V.; Hau-Riege, S. P.; Andleigh, V. K.

    1999-11-01

    Most modeling and experimental characterization of interconnect reliability is focussed on simple straight lines terminating at pads or vias. However, laid-out integrated circuits often have interconnects with junctions and wide-to-narrow transitions. In carrying out circuit-level reliability assessments it is important to be able to assess the reliability of these more complex shapes, generally referred to as `trees.' An interconnect tree consists of continuously connected high-conductivity metal within one layer of metallization. Trees terminate at diffusion barriers at vias and contacts, and, in the general case, can have more than one terminating branch when they include junctions. We have extended the understanding of `immortality' demonstrated and analyzed for straight stud-to-stud lines, to trees of arbitrary complexity. This leads to a hierarchical approach for identifying immortal trees for specific circuit layouts and models for operation. To complete a circuit-level-reliability analysis, it is also necessary to estimate the lifetimes of the mortal trees. We have developed simulation tools that allow modeling of stress evolution and failure in arbitrarily complex trees. We are testing our models and simulations through comparisons with experiments on simple trees, such as lines broken into two segments with different currents in each segment. Models, simulations and early experimental results on the reliability of interconnect trees are shown to be consistent.

  16. Multilevel Modeling with Correlated Effects

    ERIC Educational Resources Information Center

    Kim, Jee-Seon; Frees, Edward W.

    2007-01-01

    When there exist omitted effects, measurement error, and/or simultaneity in multilevel models, explanatory variables may be correlated with random components, and standard estimation methods do not provide consistent estimates of model parameters. This paper introduces estimators that are consistent under such conditions. By employing generalized…

  17. Multilevel algorithms for nonlinear optimization

    NASA Technical Reports Server (NTRS)

    Alexandrov, Natalia; Dennis, J. E., Jr.

    1994-01-01

    Multidisciplinary design optimization (MDO) gives rise to nonlinear optimization problems characterized by a large number of constraints that naturally occur in blocks. We propose a class of multilevel optimization methods motivated by the structure and number of constraints and by the expense of the derivative computations for MDO. The algorithms are an extension to the nonlinear programming problem of the successful class of local Brown-Brent algorithms for nonlinear equations. Our extensions allow the user to partition constraints into arbitrary blocks to fit the application, and they separately process each block and the objective function, restricted to certain subspaces. The methods use trust regions as a globalization strategy, and they have been shown to be globally convergent under reasonable assumptions. The multilevel algorithms can be applied to all classes of MDO formulations. Multilevel algorithms for solving nonlinear systems of equations are a special case of the multilevel optimization methods. In this case, they can be viewed as a trust-region globalization of the Brown-Brent class.

  18. Generalized Multilevel Structural Equation Modeling

    ERIC Educational Resources Information Center

    Rabe-Hesketh, Sophia; Skrondal, Anders; Pickles, Andrew

    2004-01-01

    A unifying framework for generalized multilevel structural equation modeling is introduced. The models in the framework, called generalized linear latent and mixed models (GLLAMM), combine features of generalized linear mixed models (GLMM) and structural equation models (SEM) and consist of a response model and a structural model for the latent…

  19. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point...

  20. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point...

  1. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point...

  2. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point...

  3. 47 CFR 64.1401 - Expanded interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... such equipment to connect interconnectors' fiber optic systems or microwave radio transmission... interconnectors' fiber optic systems or microwave radio transmission facilities (where reasonably feasible) with... interconnection of fiber optic facilities, local exchange carriers shall provide: (1) An interconnection point...

  4. Formation of interconnections to microfluidic devices

    DOEpatents

    Matzke, Carolyn M.; Ashby, Carol I. H.; Griego, Leonardo

    2003-07-29

    A method is disclosed to form external interconnections to a microfluidic device for coupling of a fluid or light or both into a microchannel of the device. This method can be used to form optical or fluidic interconnections to microchannels previously formed on a substrate, or to form both the interconnections and microchannels during the same process steps. The optical and fluidic interconnections are formed parallel to the plane of the substrate, and are fluid tight.

  5. 18 CFR 292.306 - Interconnection costs.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any...

  6. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 5 2014-10-01 2014-10-01 false Interconnected systems. 90.477 Section 90.477 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems. (a) Applicants for new land stations to...

  7. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 5 2013-10-01 2013-10-01 false Interconnected systems. 90.477 Section 90.477 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems. (a) Applicants for new land stations to...

  8. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 5 2011-10-01 2011-10-01 false Interconnected systems. 90.477 Section 90.477... MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems. (a... switched telephone network only after modifying their license. See § 1.929 of this chapter. In all cases...

  9. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Interconnected systems. 90.477 Section 90.477... MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems. (a... switched telephone network only after modifying their license. See § 1.929 of this chapter. In all cases...

  10. 18 CFR 292.306 - Interconnection costs.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 18 Conservation of Power and Water Resources 1 2012-04-01 2012-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any...

  11. 18 CFR 292.306 - Interconnection costs.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 18 Conservation of Power and Water Resources 1 2013-04-01 2013-04-01 false Interconnection costs... § 292.306 Interconnection costs. (a) Obligation to pay. Each qualifying facility shall be obligated to pay any interconnection costs which the State regulatory authority (with respect to any...

  12. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Interconnection. 51.305 Section 51.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERCONNECTION Additional Obligations of Incumbent Local Exchange Carriers § 51.305 Interconnection. (a) An incumbent LEC shall provide, for the...

  13. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Interconnection. 51.305 Section 51.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERCONNECTION Additional Obligations of Incumbent Local Exchange Carriers § 51.305 Interconnection. (a) An incumbent LEC shall provide, for the...

  14. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 3 2014-10-01 2014-10-01 false Interconnection. 51.305 Section 51.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERCONNECTION Additional Obligations of Incumbent Local Exchange Carriers § 51.305 Interconnection. (a) An incumbent LEC shall provide, for the...

  15. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 3 2012-10-01 2012-10-01 false Interconnection. 51.305 Section 51.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) INTERCONNECTION Additional Obligations of Incumbent Local Exchange Carriers § 51.305 Interconnection. (a) An incumbent LEC shall provide, for the...

  16. 14 CFR 29.674 - Interconnected controls.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Interconnected controls. 29.674 Section 29... Interconnected controls. Each primary flight control system must provide for safe flight and landing and operate independently after a malfunction, failure, or jam of any auxiliary interconnected control....

  17. 14 CFR 27.674 - Interconnected controls.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Interconnected controls. 27.674 Section 27... Interconnected controls. Each primary flight control system must provide for safe flight and landing and operate independently after a malfunction, failure, or jam of any auxiliary interconnected control....

  18. Multilevel step and flash imprint lithography for direct patterning of dielectrics

    NASA Astrophysics Data System (ADS)

    Jen, Wei-Lun; Palmieri, Frank; Chao, Brook; Lin, Michael; Hao, Jianjun; Owens, Jordan; Sotoodeh, Ken; Cheung, Robin; Willson, C. Grant

    2007-03-01

    Modern integrated circuit fabrication uses the dual damascene process to create the copper interconnects in the Back End of the Line (BEOL) processing. The number of wiring levels is increasing to eight or more in advanced microprocessors, and the complexity and cost of the BEOL processes is growing rapidly. An approach to dual damascene processing using Step and Flash Imprint Lithography (S-FIL®) in conjunction with Sacrificial Imprint Materials (SIM) offers the ability to pattern two levels of interconnect structures simultaneously. By using a multi-level imprint template built with both the via and trench structures, one imprint lithography step can produce the same structures as two photolithography steps, greatly reducing the number of patterning process steps in the BEOL layers. This paper presents progress in formulation of new sacrificial imprint materials and the development of S-FIL and etch processes to incorporate the SIM strategy. The SIM is formulated as a two-component system, with a tunable etch rate adjusted by the ratio of the monomer and cross-linker components. High quality imprints were produced with a multi-level template on wafers with blank films of black diamond® dielectric material. The quality of the multi-level pattern transfer from the SIM into black diamond was evaluated.

  19. Flexible interconnects for fuel cell stacks

    DOEpatents

    Lenz, David J.; Chung, Brandon W.; Pham, Ai Quoc

    2004-11-09

    An interconnect that facilitates electrical connection and mechanical support with minimal mechanical stress for fuel cell stacks. The interconnects are flexible and provide mechanically robust fuel cell stacks with higher stack performance at lower cost. The flexible interconnects replace the prior rigid rib interconnects with flexible "fingers" or contact pads which will accommodate the imperfect flatness of the ceramic fuel cells. Also, the mechanical stress of stacked fuel cells will be smaller due to the flexibility of the fingers. The interconnects can be one-sided or double-sided.

  20. Interconnects for nanoscale MOSFET technology: a review

    NASA Astrophysics Data System (ADS)

    Chaudhry, Amit

    2013-06-01

    In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.

  1. Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash.

    PubMed

    Yoon, Jung Ho; Kim, Kyung Min; Song, Seul Ji; Seok, Jun Yeong; Yoon, Kyung Jean; Kwon, Dae Eun; Park, Tae Hyung; Kwon, Young Jae; Shao, Xinglong; Hwang, Cheol Seong

    2015-07-01

    Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism. PMID:25973913

  2. Chromium Vaporization Reduction by Nickel Coatings For SOEC Interconnect Materials

    SciTech Connect

    Michael V. Glazoff; Sergey N. Rashkeev; J. Stephen Herring

    2014-09-01

    The vaporization of Cr-rich volatile species from interconnect materials is a major source of degradation that limits the lifetime of planar solid oxide devices systems with metallic interconnects, including Solid Oxide Electrolysis Cells, or SOECs. Some metallic coatings (Ni, Co, and Cu) significantly reduce the Cr release from interconnects and slow down the oxide scale growth on the steel substrate. To shed additional light upon the mechanisms of such protection and find a suitable coating material for ferritic stainless steel materials, we used a combination of first-principles calculations, thermodynamics, and diffusion modeling to investigate which factors determine the quality of the Ni metallic coating at stainless steel interconnector. We found that the Cr migration in Ni coating is determined by a delicate combination of the nickel oxidation, Cr diffusion, and phase transformation processes. Although the formation of Cr2O3 oxide is more exothermic than that of NiO, the kinetic rate of the chromia formation in the coating layer and its surface is significantly reduced by the low mobility of Cr in nickel oxide and in NiCr2O4 spinel. These results are in a good agreement with diffusion modeling for Cr diffusion through Ni coating layer on the ferritic 441 steel substrate.

  3. High performance electrically conductive adhesives (ECAs) for leadfree interconnects

    NASA Astrophysics Data System (ADS)

    Li, Yi

    Electrically conductive adhesives (ECAs) are one of the lead-free interconnect materials with the advantages of environmental friendliness, mild processing conditions, fewer processing steps, low stress on the substrates, and fine pitch interconnect capability. However, some challenging issues still exist for the currently available ECAs, including lower electrical conductivity, conductivity fatigue in reliability tests, limited current-carrying capability, poor impact strength, etc. The interfacial properties is one of the major considerations when resolving these challenges and developing high performance conductive adhesives. Surface functionalization and interface modification are the major approaches used in this thesis. Fundamental understanding and analysis of the interaction between various types of interface modifiers and ECA materials and substrates are the key for the development of high performance ECA for lead-free interconnects. The results of this thesis provide the guideline for the enhancement of interfacial properties of metal-metal and metal-polymer interactions. Systematic investigation of various types of ECAs contributes to a better understanding of materials requirements for different applications, such as surface mount technology (SMT), flip chip applications, flat panel display modules with high resolution, etc. Improvement of the electrical, thermal and reliability of different ECAs make them a potentially ideal candidate for high power and fine pitch microelectronics packaging option.

  4. Metallization failures

    NASA Technical Reports Server (NTRS)

    Beatty, R.

    1971-01-01

    Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

  5. Interconnects for intermediate temperature solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Huang, Wenhua

    Presently, one of the principal goals of solid oxide fuel cells (SOFCs) research is to reduce the stack operating temperature to between 600 and 800°C. However, one of the principal technological barriers is the non-availability of a suitable material satisfying all of the stability requirements for the interconnect. In this work two approaches for intermediate temperature SOFC interconnects have been explored. The first approach comprises an interconnect consisting of a bi-layer structure, a p-type oxide (La0.96Sr0.08MnO 2.001/LSM) layer exposed to a cathodic environment, and an n-type oxide (Y0.08Sr0.88Ti0.95Al0.05O 3-delta/YSTA) layer exposed to anodic conditions. Theoretical analysis based on the bi-layer structure has established design criteria to implement this approach. The analysis shows that the interfacial oxygen partial pressure, which determines the interconnect stability, is independent of the electronic conductivities of both layers but dependent on the oxygen ion layer interconnects, the oxygen ion conductivities of LSM and YSTA were measured as a function of temperature and oxygen partial pressure. Based on the measured data, it has been determined that if the thickness of YSTA layer is around 0.1cm, the thickness of LSM layer should be around 0.6 mum in order to maintain the stability of LSM. In a second approach, a less expensive stainless steel interconnect has been studied. However, one of the major concerns associated with the use of metallic interconnects is the development of a semi-conducting or insulating oxide scale and chromium volatility during extended exposure to the SOFC operating environment. Dense and well adhered Mn-Cu spinet oxide coatings were successfully deposited on stainless steel by an electrophoretic deposition (EPD) technique. It was found that the Mn-Cu-O coating significantly reduced the oxidation rate of the stainless steel and the volatility of chromium. The area specific resistance (ASR) of coated Crofer 22 APU is

  6. Multilevel Compression of Random Walks on Networks Reveals Hierarchical Organization in Large Integrated Systems

    PubMed Central

    Rosvall, Martin; Bergstrom, Carl T.

    2011-01-01

    To comprehend the hierarchical organization of large integrated systems, we introduce the hierarchical map equation, which reveals multilevel structures in networks. In this information-theoretic approach, we exploit the duality between compression and pattern detection; by compressing a description of a random walker as a proxy for real flow on a network, we find regularities in the network that induce this system-wide flow. Finding the shortest multilevel description of the random walker therefore gives us the best hierarchical clustering of the network — the optimal number of levels and modular partition at each level — with respect to the dynamics on the network. With a novel search algorithm, we extract and illustrate the rich multilevel organization of several large social and biological networks. For example, from the global air traffic network we uncover countries and continents, and from the pattern of scientific communication we reveal more than 100 scientific fields organized in four major disciplines: life sciences, physical sciences, ecology and earth sciences, and social sciences. In general, we find shallow hierarchical structures in globally interconnected systems, such as neural networks, and rich multilevel organizations in systems with highly separated regions, such as road networks. PMID:21494658

  7. Wafer-level packaging and direct interconnection technology based on hybrid bonding and through silicon vias

    NASA Astrophysics Data System (ADS)

    Kühne, Stéphane; Hierold, Christofer

    2011-08-01

    The presented wafer-level packaging technology enables the direct integration of electrical interconnects during low-temperature wafer bonding of a cap substrate featuring through silicon vias (TSVs) onto a MEMS device wafer. The hybrid bonding process is based on hydrophilic direct bonding of plasma-activated Si/SiO2 surfaces and the simultaneous interconnection of the device metallization layers with Cu TSVs by transient liquid phase (TLP) bonding of ultra-thin AuSn connects. The direct bond enables precise geometry definition between device and cap substrate, whereas the TLP bonding does not require a planarization of the interconnect metallization before bonding. The complete process flow is successfully validated and the fabricated devices' characterization evidenced ohmic interconnects without interfacial voids in the TLP bond.

  8. A multilevel stochastic collocation method for SPDEs

    SciTech Connect

    Gunzburger, Max; Jantsch, Peter; Teckentrup, Aretha; Webster, Clayton

    2015-03-10

    We present a multilevel stochastic collocation method that, as do multilevel Monte Carlo methods, uses a hierarchy of spatial approximations to reduce the overall computational complexity when solving partial differential equations with random inputs. For approximation in parameter space, a hierarchy of multi-dimensional interpolants of increasing fidelity are used. Rigorous convergence and computational cost estimates for the new multilevel stochastic collocation method are derived and used to demonstrate its advantages compared to standard single-level stochastic collocation approximations as well as multilevel Monte Carlo methods.

  9. Thin-film chip-to-substrate interconnect and methods for making same

    DOEpatents

    Tuckerman, David B.

    1991-01-01

    Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

  10. IETI - Isogeometric Tearing and Interconnecting.

    PubMed

    Kleiss, Stefan K; Pechstein, Clemens; Jüttler, Bert; Tomar, Satyendra

    2012-11-01

    Finite Element Tearing and Interconnecting (FETI) methods are a powerful approach to designing solvers for large-scale problems in computational mechanics. The numerical simulation problem is subdivided into a number of independent sub-problems, which are then coupled in appropriate ways. NURBS- (Non-Uniform Rational B-spline) based isogeometric analysis (IGA) applied to complex geometries requires to represent the computational domain as a collection of several NURBS geometries. Since there is a natural decomposition of the computational domain into several subdomains, NURBS-based IGA is particularly well suited for using FETI methods. This paper proposes the new IsogEometric Tearing and Interconnecting (IETI) method, which combines the advanced solver design of FETI with the exact geometry representation of IGA. We describe the IETI framework for two classes of simple model problems (Poisson and linearized elasticity) and discuss the coupling of the subdomains along interfaces (both for matching interfaces and for interfaces with T-joints, i.e. hanging nodes). Special attention is paid to the construction of a suitable preconditioner for the iterative linear solver used for the interface problem. We report several computational experiments to demonstrate the performance of the proposed IETI method. PMID:24511167

  11. Interconnect fatigue design for terrestrial photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1982-01-01

    The results of comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable (1) the prediction of cumulative interconnect failures during the design life of an array field, and (2) the unambiguous--ie., quantitative--interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field.

  12. Interconnect fatigue design for terrestrial photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1982-03-01

    The results of comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable (1) the prediction of cumulative interconnect failures during the design life of an array field, and (2) the unambiguous--ie., quantitative--interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field.

  13. 47 CFR 90.477 - Interconnected systems.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Beach, California 34°03′15.0″ 118°14′31.3″ Chicago, Illinois-Northwestern Indiana 41°52′28.1″ 87°38′22.2... 47 Telecommunication 5 2012-10-01 2012-10-01 false Interconnected systems. 90.477 Section 90.477... MOBILE RADIO SERVICES Transmitter Control Interconnected Systems § 90.477 Interconnected systems....

  14. Cascade solar cell having conductive interconnects

    DOEpatents

    Borden, Peter G.; Saxena, Ram R.

    1982-10-26

    Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.

  15. Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

    NASA Technical Reports Server (NTRS)

    Routh, D. E.; Sharma, G. C. (Inventor)

    1984-01-01

    An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

  16. Materials and process development for the monolithic interconnected module (MIM) InGaAs/InP TPV devices

    SciTech Connect

    Fatemi, N.S.; Wilt, D.M.; Jenkins, P.P.; Hoffman, R.W., Jr.; Weizer, V.G.; Murray, C.S.; Riley, D.

    1997-03-01

    The selection, development, and testing of materials and processes for MIM fabrication are described. Topics covered include isolation trenches, contact and interconnect metallization, dielectric isolation barriers, back surface reflectors, and antireflection coatings. (AIP) {copyright} {ital 1997 American Institute of Physics.}

  17. Visualizing interconnections among climate risks

    NASA Astrophysics Data System (ADS)

    Tanaka, K.; Yokohata, T.; Nishina, K.; Takahashi, K.; Emori, S.; Kiguchi, M.; Iseri, Y.; Honda, Y.; Okada, M.; Masaki, Y.; Yamamoto, A.; Shigemitsu, M.; Yoshimori, M.; Sueyoshi, T.; Hanasaki, N.; Ito, A.; Sakurai, G.; Iizumi, T.; Nishimori, M.; Lim, W. H.; Miyazaki, C.; Kanae, S.; Oki, T.

    2015-12-01

    It is now widely recognized that climate change is affecting various sectors of the world. Climate change impact on one sector may spread out to other sectors including those seemingly remote, which we call "interconnections of climate risks". While a number of climate risks have been identified in the Intergovernmental Panel on Climate Change (IPCC) Fifth Assessment Report (AR5), there has been no attempt to explore their interconnections comprehensively. Here we present a first and most exhaustive visualization of climate risks drawn based on a systematic literature survey. Our risk network diagrams depict that changes in the climate system impact natural capitals (terrestrial water, crop, and agricultural land) as well as social infrastructures, influencing the socio-economic system and ultimately our access to food, water, and energy. Our findings suggest the importance of incorporating climate risk interconnections into impact and vulnerability assessments and call into question the widely used damage function approaches, which address a limited number of climate change impacts in isolation. Furthermore, the diagram is useful to educate decision makers, stakeholders, and general public about cascading risks that can be triggered by the climate change. Socio-economic activities today are becoming increasingly more inter-dependent because of the rapid technological progress, urbanization, and the globalization among others. Equally complex is the ecosystem that is susceptible to climate change, which comprises interwoven processes affecting one another. In the context of climate change, a number of climate risks have been identified and classified according to regions and sectors. These reports, however, did not fully address the inter-relations among risks because of the complexity inherent in this issue. Climate risks may ripple through sectors in the present inter-dependent world, posing a challenge ahead of us to maintain the resilience of the system. It is

  18. Conducting Multilevel Analyses in Medical Education

    ERIC Educational Resources Information Center

    Zyphur, Michael J.; Kaplan, Seth A.; Islam, Gazi; Barsky, Adam P.; Franklin, Michael S.

    2008-01-01

    A significant body of education literature has begun using multilevel statistical models to examine data that reside at multiple levels of analysis. In order to provide a primer for medical education researchers, the current work gives a brief overview of some issues associated with multilevel statistical modeling. To provide an example of this…

  19. A Multilevel Assessment of Differential Item Functioning.

    ERIC Educational Resources Information Center

    Shen, Linjun

    A multilevel approach was proposed for the assessment of differential item functioning and compared with the traditional logistic regression approach. Data from the Comprehensive Osteopathic Medical Licensing Examination for 2,300 freshman osteopathic medical students were analyzed. The multilevel approach used three-level hierarchical generalized…

  20. Multilevel Interventions: Study Design and Analysis Issues

    PubMed Central

    Gross, Cary P.; Zaslavsky, Alan M.; Taplin, Stephen H.

    2012-01-01

    Multilevel interventions, implemented at the individual, physician, clinic, health-care organization, and/or community level, increasingly are proposed and used in the belief that they will lead to more substantial and sustained changes in behaviors related to cancer prevention, detection, and treatment than would single-level interventions. It is important to understand how intervention components are related to patient outcomes and identify barriers to implementation. Designs that permit such assessments are uncommon, however. Thus, an important way of expanding our knowledge about multilevel interventions would be to assess the impact of interventions at different levels on patients as well as the independent and synergistic effects of influences from different levels. It also would be useful to assess the impact of interventions on outcomes at different levels. Multilevel interventions are much more expensive and complicated to implement and evaluate than are single-level interventions. Given how little evidence there is about the value of multilevel interventions, however, it is incumbent upon those arguing for this approach to do multilevel research that explicates the contributions that interventions at different levels make to the desired outcomes. Only then will we know whether multilevel interventions are better than more focused interventions and gain greater insights into the kinds of interventions that can be implemented effectively and efficiently to improve health and health care for individuals with cancer. This chapter reviews designs for assessing multilevel interventions and analytic ways of controlling for potentially confounding variables that can account for the complex structure of multilevel data. PMID:22623596

  1. Structural optimization by multilevel decomposition

    NASA Technical Reports Server (NTRS)

    Sobieszczanski-Sobieski, J.; James, B.; Dovi, A.

    1983-01-01

    A method is described for decomposing an optimization problem into a set of subproblems and a coordination problem which preserves coupling between the subproblems. The method is introduced as a special case of multilevel, multidisciplinary system optimization and its algorithm is fully described for two level optimization for structures assembled of finite elements of arbitrary type. Numerical results are given for an example of a framework to show that the decomposition method converges and yields results comparable to those obtained without decomposition. It is pointed out that optimization by decomposition should reduce the design time by allowing groups of engineers, using different computers to work concurrently on the same large problem.

  2. Breathing synchronization in interconnected networks

    PubMed Central

    Louzada, V. H. P.; Araújo, N. A. M.; Andrade, J. S.; Herrmann, H. J.

    2013-01-01

    Global synchronization in a complex network of oscillators emerges from the interplay between its topology and the dynamics of the pairwise interactions among its numerous components. When oscillators are spatially separated, however, a time delay appears in the interaction which might obstruct synchronization. Here we study the synchronization properties of interconnected networks of oscillators with a time delay between networks and analyze the dynamics as a function of the couplings and communication lag. We discover a new breathing synchronization regime, where two groups appear in each network synchronized at different frequencies. Each group has a counterpart in the opposite network, one group is in phase and the other in anti-phase with their counterpart. For strong couplings, instead, networks are internally synchronized but a phase shift between them might occur. The implications of our findings on several socio-technical and biological systems are discussed. PMID:24256765

  3. La0.7Sr0.3MnO3-coated SS444 alloy by dip-coating process for metallic interconnect supported Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    da Conceição, Leandro; Dessemond, Laurent; Djurado, Elisabeth; Souza, Mariana M. V. M.

    2013-11-01

    Sol-gel and dip-coating technologies have been used to deposit La0.7Sr0.3MnO3 (LSM) porous thin films on stainless steel SS444-Cr-17% interconnect plates. Single and double LSM layers were fired in air at 800 °C for 2 h to achieve a sufficient adhesion on the substrate. The microstructure and composition of oxide scales were investigated using X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The area specific resistance (ASR) for coated and uncoated plates was evaluated during long term oxidation in air at 800 °C for 200 h, and between 600 and 900 °C, by DC two point measurements. The formation of an interfacial oxide scale based on (Cr,Mn)3O4 spinel and Cr2O3 has been evidenced for uncoated and LSM-coated SS444. The results indicate that the oxidation resistance of the alloy is enhanced by a protective coating consisting of one single LSM layer. ASR values as low as 0.6 mΩ cm2 were recorded after 200 h at 800 °C. The effectiveness of the LSM layer as a protective coating depends on the stability of the film and its adherence on the alloy substrate.

  4. Strain measurements in aluminum interconnects by x-ray microdiffraction

    NASA Astrophysics Data System (ADS)

    Hwang, Keith J.

    2000-10-01

    Reliability of metal interconnects in integrated circuits is a major concern to the microelectronics industry. Understanding the impact of stress and strain in metal lines is crucial for improving their reliability. Because of thermal expansion mismatches between the interconnect, substrate, and passivation material, high tensile stresses are developed during processing. In addition, stress gradients develop due to electromigration because of the high current densities passing through the lines. X-ray diffraction is an ideal technique for directly measuring these stresses. However, most of the earlier measurements were performed using millimeter size x-ray beams, allowing only macroscopic determinations of stress. Spatially resolved measurements of stresses in interconnects were not possible. A synchrotron-based white beam x-ray microdiffraction technique was developed and applied for localized strain mapping on polycrystalline thin film interconnects. The system was shown to achieve micron-scale spatial resolution and strain sensitivities on the order of 2 x 10-4. Two methods for performing in-situ calibration of the detector angles utilizing the (001) silicon substrate were presented: the energy method and the interplanar angle method. Various (hkl) reflections were measured from the (001) silicon substrate and the displacement of the x-ray beam was determined. Although discrepancies arose between these methods, both proved satisfactory to correct the Al (hkl) d-spacing measurements. Thermal and electromigration-induced hydrostatic stress distributions in a 2.6 mum wide passivated A1 line were investigated. The Al line exhibited thermal stress behavior consistent with confinement by the silicon/silicon dioxide interface. The electromigration-induced stress evolution indicated the presence of bamboo grains acting as blocking boundaries.

  5. Thin-film chip-to-substrate interconnect and methods for making same

    DOEpatents

    Tuckerman, D.B.

    1988-06-06

    Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

  6. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All DEMS licensees must make available to the public all information necessary to allow the manufacture of user... the public all information necessary to allow interconnection of DEMS networks....

  7. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All DEMS licensees must make available to the public all information necessary to allow the manufacture of user... the public all information necessary to allow interconnection of DEMS networks....

  8. 14 CFR 29.674 - Interconnected controls.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Interconnected controls. 29.674 Section 29... AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Design and Construction Control Systems § 29.674 Interconnected controls. Each primary flight control system must provide for safe flight and landing and...

  9. 14 CFR 27.674 - Interconnected controls.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Interconnected controls. 27.674 Section 27... AIRWORTHINESS STANDARDS: NORMAL CATEGORY ROTORCRAFT Design and Construction Control Systems § 27.674 Interconnected controls. Each primary flight control system must provide for safe flight and landing and...

  10. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Flap interconnection. 23.701 Section 23.701... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a...

  11. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Flap interconnection. 23.701 Section 23.701... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a...

  12. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Flap interconnection. 23.701 Section 23.701... STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap interconnection. (a) The main wing flaps and related movable surfaces as a...

  13. 47 CFR 69.124 - Interconnection charge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Interconnection charge. 69.124 Section 69.124 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Computation of Charges § 69.124 Interconnection charge. (a) Until December 31, 2001, local exchange...

  14. 47 CFR 69.124 - Interconnection charge.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Interconnection charge. 69.124 Section 69.124 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Computation of Charges § 69.124 Interconnection charge. (a) Until December 31, 2001, local exchange...

  15. Interconnect fatigue design for terrestrial photovoltaic modules

    SciTech Connect

    Mon, G. R.; Moore, D. M.; Ross, Jr., R. G.

    1982-03-01

    Fatigue of solar cell electrical interconnects due to thermal cycling has historically been a major failure mechanism in photovoltaic arrays; the results of a comprehensive investigation of interconnect fatigue that has led to the definition of useful reliability-design and life-prediction algorithms are presented. Experimental data gathered in this study indicate that the classical strain-cycle (fatigue) curve for the interconnect material is a good model of mean interconnect fatigue performance, but it fails to account for the broad statistical scatter, which is critical to reliability prediction. To fill this shortcoming the classical fatigue curve is combined with experimental cumulative interconnect failure rate data to yield statistical fatigue curves (having failure probability as a parameter) which enable: (1) the prediction of cumulative interconnect failures during the design life of an array field; and (2) the unambiguous - i.e., quantitative - interpretation of data from field-service qualification (accelerated thermal cycling) tests. Optimal interconnect cost-reliability design algorithms are derived based on minimizing the cost of energy over the design life of the array field. This procedure yields not only the minimum break-even cost of delivered energy, but also the required degree of interconnect redundancy and an estimate of array power degradation during the design life of the array field. The usefulness of the design algorithms is demonstrated with realistic examples of design optimization, prediction, and service qualification testing.

  16. Updating Technical Screens for PV Interconnection: Preprint

    SciTech Connect

    Coddington, M.; Ellis, A.; Lynn, K.; Razon, A.; Key, T.; Kroposki, B.; Mather, B.; Hill, R.; Nicole, K.; Smith, J.

    2012-08-01

    Solar photovoltaics (PV) is the dominant type of distributed generation (DG) technology interconnected to electric distribution systems in the United States, and deployment of PV systems continues to increase rapidly. Considering the rapid growth and widespread deployment of PV systems in United States electric distribution grids, it is important that interconnection procedures be as streamlined as possible to avoid unnecessary interconnection studies, costs, and delays. Because many PV interconnection applications involve high penetration scenarios, the process needs to allow for a sufficiently rigorous technical evaluation to identify and address possible system impacts. Existing interconnection procedures are designed to balance the need for efficiency and technical rigor for all DG. However, there is an implicit expectation that those procedures will be updated over time in order to remain relevant with respect to evolving standards, technology, and practical experience. Modifications to interconnection screens and procedures must focus on maintaining or improving safety and reliability, as well as accurately allocating costs and improving expediency of the interconnection process. This paper evaluates the origins and usefulness of the capacity penetration screen, offers potential short-term solutions which could effectively allow fast-track interconnection to many PV system applications, and considers longer-term solutions for increasing PV deployment levels in a safe and reliable manner while reducing or eliminating the emphasis on the penetration screen.

  17. 47 CFR 101.519 - Interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Interconnection. 101.519 Section 101.519 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES FIXED MICROWAVE SERVICES 24 GHz Service and Digital Electronic Message Service § 101.519 Interconnection. (a) All...

  18. African electricity infrastructure, interconnections and exchanges

    SciTech Connect

    Hammons, T.J.; Taher, F.; Gulstone, A.B.; Blyden, B.K.; Johnston, R.; Isekemanga, E.; Paluku, K.; Calitz, A.C.; Simanga, N.N.

    1997-01-01

    A 1996 IEEE PES Summer Meeting panel session focused on African Electricity Infrastructure, Interconnections, and Electricity Exchanges. The session was sponsored by the PES Energy Development and Power Generation Committee and organized/moderated by T.J. Hammons, chair of the International Practices Subcommittee. Panelists discussed energy resources, feasibility studies to interconnect power systems, the present state of the electric power sector, future expansion of African power systems, interconnections and power exchanges, and the impact of the private sector on electricity supply. The presentations were as follows: Prospects of the Evolution of a Unified Interconnection Power System in Africa, Fouad Taher; The World Bank`s Involvement with African Electricity Infrastructure, Alfred Gulstone; Towards the implementation of an Integrated African Grid, Bai K. Blyden, Raymond Johnston; Grand Inga Interconnection Projects, Elese Isekemanga, K. Paluku; The Innovative Southern African Kilowatt Hour, Andries C. Calitz; Report on Burundi, Rwanda, and Zaire, Ngove-Ngulu Simanga.

  19. High-Density, High-Bandwidth, Multilevel Holographic Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    2008-01-01

    A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing

  20. Chip-Level Electromigration Reliability for Cu Interconnects

    SciTech Connect

    Gall, M.; Oh, C.; Grinshpon, A.; Zolotov, V.; Panda, R.; Demircan, E.; Mueller, J.; Justison, P.; Ramakrishna, K.; Thrasher, S.; Hernandez, R.; Herrick, M.; Fox, R.; Boeck, B.; Kawasaki, H.; Haznedar, H.; Ku, P.

    2004-12-08

    Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure risk has remained one of the most important reliability concerns for most advanced process technologies. Ever increasing operating current densities and the introduction of low-k materials in the backend process scheme are some of the issues that threaten reliable, long-term operation at elevated temperatures. The traditional method of verifying EM reliability only through current density limit checks is proving to be inadequate in general, or quite expensive at the best. A Statistical EM Budgeting (SEB) methodology has been proposed to assess more realistic chip-level EM reliability from the complex statistical distribution of currents in a chip. To be valuable, this approach requires accurate estimation of currents for all interconnect segments in a chip. However, no efficient technique to manage the complexity of such a task for very large chip designs is known. We present an efficient method to estimate currents exhaustively for all interconnects in a chip. The proposed method uses pre-characterization of cells and macros, and steps to identify and filter out symmetrically bi-directional interconnects. We illustrate the strength of the proposed approach using a high-performance microprocessor design for embedded applications as a case study.

  1. Progress toward board-level optical interconnect technology

    NASA Astrophysics Data System (ADS)

    Moynihan, Matthew L.; Sicard, Bruno; Ho, Tuan; Little, Luke; Pugliano, Nick; Shelnut, James G.; Zheng, Hai Bin; Knudsen, Phil; Lundy, Dan; Chiarotto, Nancy; Lustig, Curtis; Allen, Craig

    2005-03-01

    Bandwidth demand is still growing and it is becoming more difficult for copper based interconnect technologies to meet system requirements. Considerable progress is being made in the development of optical interconnect technology. Recent publications have shown improved integration of turning mirrors and connectors for board level applications. This paper presents recent work on a siloxane-based waveguide material that is optimized for 850nm board level optical interconnect applications. The material under development is a negative acting photoimageable material that can be processed with conventional Printed Wire Board (PWB) or CMOS processing techniques and chemistries. Meter long waveguides have been fabricated on both silicon and FR4 substrates with optical loss performance of 0.027dB/cm and 0.067dB/cm respectively. Data illustrating the effect of bend radii and splitter performance is reported. Lastly, the ability of the siloxane material to withstand PWB fabrication and assembly processes such as lamination, metallization and reliability is demonstrated.

  2. Emerging Nanoscale Interconnect Processing Technologies: Fundamental and Practice

    NASA Astrophysics Data System (ADS)

    Kaloyeros, Alain E.; Castracane, James; Dunn, Kathleen; Eisenbraun, Eric; Gadre, Anand; Labella, Vincent; Stoner, Timothy; Xu, Bai; Ryan, James G.; Topol, Anna

    The prospects for Gigascale integration and beyond are hindered, in the near term, by increasingly higher RC delays in global and semi-global electrical interconnect systems. Long-term, signal transmission delays are projected to become significantly more challenging due to fundamental limits imposed by the basic laws of physics. As feature sizes shrink below the mean free path for electron scattering in conventional metal wires, surface scattering, which is defined as the scattering of electron waves from the boundaries of ultra narrow conductors, severely hinders electronic conductivity and stands as a major roadblock to Moore's Law at the most fundamental level.

  3. Note: Cryogenic microstripline-on-Kapton microwave interconnects

    NASA Astrophysics Data System (ADS)

    Harris, A. I.; Sieth, M.; Lau, J. M.; Church, S. E.; Samoska, L. A.; Cleary, K.

    2012-08-01

    Simple broadband microwave interconnects are needed for increasing the size of focal plane heterodyne radiometer arrays. We have measured loss and crosstalk for arrays of microstrip transmission lines in flex circuit technology at 297 and 77 K, finding good performance to at least 20 GHz. The dielectric constant of Kapton substrates changes very little from 297 to 77 K, and the electrical loss drops. The small cross-sectional area of metal in a printed circuit structure yields overall thermal conductivities similar to stainless steel coaxial cable. Operationally, the main performance tradeoffs are between crosstalk and thermal conductivity. We tested a patterned ground plane to reduce heat flux.

  4. Crosstalk analysis of carbon nanotube bundle interconnects.

    PubMed

    Zhang, Kailiang; Tian, Bo; Zhu, Xiaosong; Wang, Fang; Wei, Jun

    2012-01-01

    Carbon nanotube (CNT) has been considered as an ideal interconnect material for replacing copper for future nanoscale IC technology due to its outstanding current carrying capability, thermal conductivity, and mechanical robustness. In this paper, crosstalk problems for single-walled carbon nanotube (SWCNT) bundle interconnects are investigated; the interconnect parameters for SWCNT bundle are calculated first, and then the equivalent circuit has been developed to perform the crosstalk analysis. Based on the simulation results using SPICE simulator, the voltage of the crosstalk-induced glitch can be reduced by decreasing the line length, increasing the spacing between adjacent lines, or increasing the diameter of SWCNT. PMID:22340628

  5. Gigabit optical interconnects for LAN applications

    NASA Astrophysics Data System (ADS)

    Boncek, Raymond K.; Krol, Mark F.; Johns, Steven T.; Stacy, John L.; Hayduk, Michael J.

    1994-06-01

    We report on the results of experiments performed in areas of technology required to develop gigabit optical interconnects for communication at 1.3 micrometers wavelength. The goal of this work was to develop interconnects not only with very high bandwidth, but with serve to multiple channels having multiple access and simple processing algorithms so as not to rely on high bandwidth electronics, as well. Optical correlation switches (i.e. optical `AND' gates) for use in time-division optical interconnects achieve these goals.

  6. Method for fabricating an interconnected array of semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1989-10-10

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  7. Scalable Adaptive Multilevel Solvers for Multiphysics Problems

    SciTech Connect

    Xu, Jinchao

    2014-12-01

    In this project, we investigated adaptive, parallel, and multilevel methods for numerical modeling of various real-world applications, including Magnetohydrodynamics (MHD), complex fluids, Electromagnetism, Navier-Stokes equations, and reservoir simulation. First, we have designed improved mathematical models and numerical discretizaitons for viscoelastic fluids and MHD. Second, we have derived new a posteriori error estimators and extended the applicability of adaptivity to various problems. Third, we have developed multilevel solvers for solving scalar partial differential equations (PDEs) as well as coupled systems of PDEs, especially on unstructured grids. Moreover, we have integrated the study between adaptive method and multilevel methods, and made significant efforts and advances in adaptive multilevel methods of the multi-physics problems.

  8. Optical Backplane Interconnect Technology (OBIT)

    NASA Technical Reports Server (NTRS)

    Hammer, J. M.

    1988-01-01

    We describe and analyze a novel approach to implementing an Optical Backplane Interconnect Technology (OBIT) that is capable of optically connecting any row of a 32x32 backplane array to any row of a second 32x32 array. Each backplane array is formed monolithically on a wafer. The technology is based on the use of Grating Surface Emitting (GSE) waveguides formed on a wafer containing quantum-well and separate confinement waveguide layers. These layers are used for transverse guiding, gain, modulation, detection, and for the formation of wavelength tunable distributed-Bragg reflector lasers. The required surface structures are formed photolithographically. The GSE waveguides act as efficient antennae that radiate light at angles selected by tuning the wavelength of the lasers. The same waveguides may be used as the receiving antennae when the array is used in the receiving mode. Thus, wavelength tuning is used to direct each row of the transmitting array to the desired row of the receiving array. In summary: The optical backplane array will have the following characteristics: Any row of a 32x32 GSE array may be optically connected to any row of a second 32x32 array. Only one switch decision is required to switch 32 parallel connections to any one of 32 positions. Each monolithic array can be used as both transmitter and receiver by switching the bias on the quantum-well switch-detectors. Separate transmitting and receiving structures could be provided for duplex operation. For a bit error rate of 10 sup 9 at 100-MHz data rate, a required laser power of 12 mW is calculated based on an estimated total optical loss of 40 dB.

  9. Hybrid silicon evanescent approach to optical interconnects

    NASA Astrophysics Data System (ADS)

    Liang, Di; Fang, Alexander W.; Chen, Hui-Wen; Sysak, Matthew N.; Koch, Brian R.; Lively, Erica; Raday, Omri; Kuo, Ying-Hao; Jones, Richard; Bowers, John E.

    2009-06-01

    We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach-Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature ( T 0) of 51°C, an above threshold characteristic temperature ( T 1) of 100°C, and a thermal impedance ( Z T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry-Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III-V epitaxial transfer to silicon in a timely and dimension-independent fashion.

  10. Implementation of optical interconnections for VLSI

    NASA Technical Reports Server (NTRS)

    Wu, Wennie H.; Bergman, Larry A.; Johnston, Alan R.; Guest, Clark C.; Esener, Sadik C.

    1987-01-01

    This paper reports on the progress in implementing optical interconnections for VLSI. Four areas are covered: (1) the holographic optical element (HOE), (2) the laser sources, (3) the detectors and associated circuits forming an optically addressed gate, and (4) interconnection experiments in which five gates are actuated from one source. A laser scanner system with a resolution of 12 x 20 microns has been utilized to generate the HOEs. Diffraction efficiency of the HOE and diffracted spot size have been measured. Stock lasers have been modified with a high-frequency package for interconnect experiments, and buried heterostructure fabrication techniques have been pursued. Measurements have been made on the fabricated photodetectors to determine dark current, responsivity, and response time. The optical gates and the overall chip have been driven successfully with an input light beam, as well as with the optical signal interconnected through the one to five holograms.

  11. INTERCONNECTIONS BETWEEN HUMAN HEALTH AND ECOLOGICAL INTEGRITY

    EPA Science Inventory

    Interconnections between Human Health and Ecological Integrity emanates from a June 2000 Pellston Workshop in Snowbird, Utah, USA. Jointly sponsored by the Society of Environmental Toxicology and Chemistry (SETAC) and the Society of Toxicology (SOT), the workshop was motivated by...

  12. Traffic congestion in interconnected complex networks

    NASA Astrophysics Data System (ADS)

    Tan, Fei; Wu, Jiajing; Xia, Yongxiang; Tse, Chi K.

    2014-06-01

    Traffic congestion in isolated complex networks has been investigated extensively over the last decade. Coupled network models have recently been developed to facilitate further understanding of real complex systems. Analysis of traffic congestion in coupled complex networks, however, is still relatively unexplored. In this paper, we try to explore the effect of interconnections on traffic congestion in interconnected Barabási-Albert scale-free networks. We find that assortative coupling can alleviate traffic congestion more readily than disassortative and random coupling when the node processing capacity is allocated based on node usage probability. Furthermore, the optimal coupling probability can be found for assortative coupling. However, three types of coupling preferences achieve similar traffic performance if all nodes share the same processing capacity. We analyze interconnected Internet autonomous-system-level graphs of South Korea and Japan and obtain similar results. Some practical suggestions are presented to optimize such real-world interconnected networks accordingly.

  13. Removing Barriers to Utility Interconnected Photovoltaic Inverters

    SciTech Connect

    Gonzalez, S.; Bonn, R.H.; Ginn, J.W.

    2000-10-03

    The Million Solar Roofs Initiative has motivated a renewed interest in the development of utility interconnected photovoltaic (UIPV) inverters. Government-sponsored programs (PVMaT, PVBONUS) and competition among utility interconnected inverter manufacturers have stimulated innovations and improved the performance of existing technologies. With this resurgence, Sandia National Laboratories (SNL) has developed a program to assist industry initiatives to overcome barriers to UIPV inverters. In accordance with newly adopted IEEE 929-2000, the utility interconnected PV inverters are required to cease energizing the utility grid when either a significant disturbance occurs or the utility experiences an interruption in service. Compliance with IEEE 929-2000 is being widely adopted by utilities as a minimum requirement for utility interconnection. This report summarizes work done at the SNL balance-of-systems laboratory to support the development of IEEE 929-2000 and to assist manufacturers in meeting its requirements.

  14. Navigability of interconnected networks under random failures

    PubMed Central

    De Domenico, Manlio; Solé-Ribalta, Albert; Gómez, Sergio; Arenas, Alex

    2014-01-01

    Assessing the navigability of interconnected networks (transporting information, people, or goods) under eventual random failures is of utmost importance to design and protect critical infrastructures. Random walks are a good proxy to determine this navigability, specifically the coverage time of random walks, which is a measure of the dynamical functionality of the network. Here, we introduce the theoretical tools required to describe random walks in interconnected networks accounting for structure and dynamics inherent to real systems. We develop an analytical approach for the covering time of random walks in interconnected networks and compare it with extensive Monte Carlo simulations. Generally speaking, interconnected networks are more resilient to random failures than their individual layers per se, and we are able to quantify this effect. As an application––which we illustrate by considering the public transport of London––we show how the efficiency in exploring the multiplex critically depends on layers’ topology, interconnection strengths, and walk strategy. Our findings are corroborated by data-driven simulations, where the empirical distribution of check-ins and checks-out is considered and passengers travel along fastest paths in a network affected by real disruptions. These findings are fundamental for further development of searching and navigability strategies in real interconnected systems. PMID:24912174

  15. Alternative Methods for Assessing Mediation in Multilevel Data: The Advantages of Multilevel SEM

    ERIC Educational Resources Information Center

    Preacher, Kristopher J.; Zhang, Zhen; Zyphur, Michael J.

    2011-01-01

    Multilevel modeling (MLM) is a popular way of assessing mediation effects with clustered data. Two important limitations of this approach have been identified in prior research and a theoretical rationale has been provided for why multilevel structural equation modeling (MSEM) should be preferred. However, to date, no empirical evidence of MSEM's…

  16. An Interconnected Network of Core-Forming Melts Produced by Shear Deformation

    NASA Technical Reports Server (NTRS)

    Bruhn, D.; Groebner, N.; Kohlstedt, D. L.

    2000-01-01

    The formation mechanism of terrestrial planetary is still poorly understood, and has been the subject of numerous experimental studies. Several mechanisms have been proposed by which metal-mainly iron with some nickel-could have been extracted from a silicate mantle to form the core. Most recent models involve gravitational sinking of molten metal or metal sulphide through a partially or fully molten mantle that is often referred to as a'magma ocean. Alternative models invoke percolation of molten metal along an interconnected network (that is, porous flow) through a solid silicate matrix. But experimental studies performed at high pressures have shown that, under hydrostatic conditions, these melts do not form an interconnected network, leading to the widespread assumption that formation of metallic cores requires a magma ocean. In contrast, here we present experiments which demonstrate that shear deformation to large strains can interconnect a significant fraction of initially isolated pockets of metal and metal sulphide melts in a solid matrix of polycrystalline olivine. Therefore, in a dynamic (nonhydrostatic) environment, percolation remains a viable mechanism for the segregation and migration of core-forming melts in a solid silicate mantle.

  17. An interconnected network of core-forming melts produced by shear deformation

    PubMed

    Bruhn; Groebner; Kohlstedt

    2000-02-24

    The formation mechanism of terrestrial planetary cores is still poorly understood, and has been the subject of numerous experimental studies. Several mechanisms have been proposed by which metal--mainly iron with some nickel--could have been extracted from a silicate mantle to form the core. Most recent models involve gravitational sinking of molten metal or metal sulphide through a partially or fully molten mantle that is often referred to as a 'magma ocean'. Alternative models invoke percolation of molten metal along an interconnected network (that is, porous flow) through a solid silicate matrix. But experimental studies performed at high pressures have shown that, under hydrostatic conditions, these melts do not form an interconnected network, leading to the widespread assumption that formation of metallic cores requires a magma ocean. In contrast, here we present experiments which demonstrate that shear deformation to large strains can interconnect a significant fraction of initially isolated pockets of metal and metal sulphide melts in a solid matrix of polycrystalline olivine. Therefore, in a dynamic (non-hydrostatic) environment, percolation remains a viable mechanism for the segregation and migration of core-forming melts in a solid silicate mantle. PMID:10706283

  18. FUNDAMENTAL STUDIES OF THE DURABILITY OF MATERIALS FOR INTERCONNECTS IN SOLID OXIDE FUEL CELLS

    SciTech Connect

    Hammer, J.; Laney, S.; Jackson, W.; Pettit, F.; Meier, J.; Dhanaraj, N.; Beuth, J.

    2005-01-28

    This task involves theoretical analysis of possible alternative metallic interconnect schemes including: Ni and dispersion-strengthened Ni, low CTE alloys based on Fe-Ni (Invar), coatings to suppress evaporation, and incorporation of high conductivity paths. The most promising systems are being evaluated experimentally with regard to durability and oxide conductivity.

  19. Selection and Evaluation of Heat-Resistant Alloys for Planar SOFC Interconnect Applications

    SciTech Connect

    Yang, Z Gary; Weil, K. Scott; Paxton, Dean M.; Stevenson, Jeffry W.

    2002-11-21

    Over the past several years, the steady reduction in SOFC operating temperatures to the intermediate range of 700~850oC [1] has made it feasible for lanthanum chromite to be supplanted by metals or alloys as the interconnect materials. Compared to doped lanthanum chromite, metals or alloys offer significantly lower raw material and fabrication costs. However, to be a durable and reliable, a metal or alloy has to satisfy several functional requirements specific to the interconnect under SOFC operating conditions. Specifically, the interconnect metal or alloy should possess the following properties: (i) Good surface stability (resistance to oxidation, hot corrosion, and carburization) in both cathodic (air) and anodic (fuel) atmospheres; (ii) Thermal expansion matching to the ceramic PEN (positive cathode-electrolyte-negative anode) and seal materials (as least for a rigid seal design); (iii) High electrical conductivity through both the bulk material and in-situ formed oxide scales; (iv) Bulk and interfacial thermal mechanical reliability and durability at the operating temperature; (v) Compatibility with other materials in contact with interconnects such as seals and electrical contact materials.

  20. Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees

    NASA Astrophysics Data System (ADS)

    Gan, C. L.; Thompson, C. V.; Pey, K. L.; Choi, W. K.

    2003-07-01

    Electromigration tests on Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/interlevel diffusion barrier interface (e.g., the Cu/Si3N4 interface) leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias lead to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees cannot be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects.

  1. Applications of cascade multilevel inverters.

    PubMed

    Peng, Fang-zen; Qian, Zhao-ming

    2003-01-01

    Cascade multilevel inverters have been developed for electric utility applications. A cascade M-level inverter consists of (M-1)/2 H-bridges in which each bridge's dc voltage is supported by its own dc capacitor. The new inverter can: (1) generate almost sinusoidal waveform voltage while only switching one time per fundamental cycle; (2) dispense with multi-pulse inverters' transformers used in conventional utility interfaces and static var compensators; (3) enables direct parallel or series transformer-less connection to medium- and high-voltage power systems. In short, the cascade inverter is much more efficient and suitable for utility applications than traditional multi-pulse and pulse width modulation (PWM) inverters. The authors have experimentally demonstrated the superiority of the new inverter for power supply, (hybrid) electric vehicle (EV) motor drive, reactive power (var) and harmonic compensation. This paper summarizes the features, feasibility, and control schemes of the cascade inverter for utility applications including utility interface of renewable energy, voltage regulation, var compensation, and harmonic filtering in power systems. Analytical, simulated, and experimental results demonstrated the superiority of the new inverters. PMID:14566981

  2. Multilevel Complex Networks and Systems

    NASA Astrophysics Data System (ADS)

    Caldarelli, Guido

    2014-03-01

    Network theory has been a powerful tool to model isolated complex systems. However, the classical approach does not take into account the interactions often present among different systems. Hence, the scientific community is nowadays concentrating the efforts on the foundations of new mathematical tools for understanding what happens when multiple networks interact. The case of economic and financial networks represents a paramount example of multilevel networks. In the case of trade, trade among countries the different levels can be described by the different granularity of the trading relations. Indeed, we have now data from the scale of consumers to that of the country level. In the case of financial institutions, we have a variety of levels at the same scale. For example one bank can appear in the interbank networks, ownership network and cds networks in which the same institution can take place. In both cases the systemically important vertices need to be determined by different procedures of centrality definition and community detection. In this talk I will present some specific cases of study related to these topics and present the regularities found. Acknowledged support from EU FET Project ``Multiplex'' 317532.

  3. Multilevel sequential Monte Carlo samplers

    DOE PAGESBeta

    Beskos, Alexandros; Jasra, Ajay; Law, Kody; Tempone, Raul; Zhou, Yan

    2016-08-24

    Here, we study the approximation of expectations w.r.t. probability distributions associated to the solution of partial differential equations (PDEs); this scenario appears routinely in Bayesian inverse problems. In practice, one often has to solve the associated PDE numerically, using, for instance finite element methods and leading to a discretisation bias, with the step-size level hL. In addition, the expectation cannot be computed analytically and one often resorts to Monte Carlo methods. In the context of this problem, it is known that the introduction of the multilevel Monte Carlo (MLMC) method can reduce the amount of computational effort to estimate expectations, for a given level of error. This is achieved via a telescoping identity associated to a Monte Carlo approximation of a sequence of probability distributions with discretisation levelsmore » $${\\infty}$$ >h0>h1 ...>hL. In many practical problems of interest, one cannot achieve an i.i.d. sampling of the associated sequence of probability distributions. A sequential Monte Carlo (SMC) version of the MLMC method is introduced to deal with this problem. In conclusion, it is shown that under appropriate assumptions, the attractive property of a reduction of the amount of computational effort to estimate expectations, for a given level of error, can be maintained within the SMC context.« less

  4. GPU-based Multilevel Clustering.

    PubMed

    Chiosa, Iurie; Kolb, Andreas

    2010-04-01

    The processing power of parallel co-processors like the Graphics Processing Unit (GPU) are dramatically increasing. However, up until now only a few approaches have been presented to utilize this kind of hardware for mesh clustering purposes. In this paper we introduce a Multilevel clustering technique designed as a parallel algorithm and solely implemented on the GPU. Our formulation uses the spatial coherence present in the cluster optimization and hierarchical cluster merging to significantly reduce the number of comparisons in both parts . Our approach provides a fast, high quality and complete clustering analysis. Furthermore, based on the original concept we present a generalization of the method to data clustering. All advantages of the meshbased techniques smoothly carry over to the generalized clustering approach. Additionally, this approach solves the problem of the missing topological information inherent to general data clustering and leads to a Local Neighbors k-means algorithm. We evaluate both techniques by applying them to Centroidal Voronoi Diagram (CVD) based clustering. Compared to classical approaches, our techniques generate results with at least the same clustering quality. Our technique proves to scale very well, currently being limited only by the available amount of graphics memory. PMID:20421676

  5. Temperature dependent stability model for graphene nanoribbon interconnects

    NASA Astrophysics Data System (ADS)

    Chanu, Waikhom Mona; Das, Debaprasad

    2016-04-01

    In this paper, a temperature dependent equivalent circuit model for graphene nanoribbon (GNR) interconnects is proposed. The stability analysis of GNR interconnects is performed using this proposed model and its performance is compared with respect to that of the copper based interconnects. The analysis is performed for different interconnect systems for 16nm ITRS technology node. With increase in the length of interconnects, the relative stability increases. GNR interconnect shows less increase of resistance with the increase in temperature as compared to Cu interconnects.

  6. Committed regional electrical interconnection projects in the Middle East

    SciTech Connect

    Azzam, M.; Al-Said, A.

    1994-12-01

    Due to the well-known advantages of electrical interconnections and their consequent benefits, Jordan considers the interconnection of its electrical network with the neighboring electrical networks as one of its main corporate strategies. At present the electrical interconnection project of the networks of Egypt, Iraq, Jordan, Syria, and Turkey is progressing. To achieve this interconnection project, two feasibility studies were conducted: interconnection of the Egyptian and Jordanian electrical power systems; interconnection of the electrical networks of Egypt, Iraq, Jordan, Syria, and Turkey (EIJST interconnection). This presentation reviews these studies and their results.

  7. Hierarchical interconnection networks for multicomputer systems

    SciTech Connect

    Dandamudi, S.P. ); Eager, D.L. )

    1990-06-01

    Multicomputer systems are distributed-memory MIMD systems. Communication in these systems occurs through explicit message passing. Therefore, the underlying processor interconnection network plays an important and direct role in determining their performance. Several types f interconnection networks have been proposed. Unfortunately, no network is universally better. Ideally, therefore, systems should use more than one such network. Furthermore, systems that have large numbers of processors should be able to exploit locality in communication in order to obtain improved performance. This paper proposes the use of hierarchical interconnection networks to meet both these requirements. A performance analysis of a class of hierarchical interconnection networks is presented. This analysis includes both static analysis (queuing delays are neglected) and queuing analysis. In both cases, the hierarchical networks are shown to have better cost-benefit ratios. The queuing analysis is also validated (within our model) by several simulation experiments. The impact of two performance enhancement schemes---replication of links and improved routing algorithms---on hierarchical interconnection network performance is also presented.

  8. Design and fabrication of a Gaussian fan-out optical interconnect

    NASA Astrophysics Data System (ADS)

    Wong, Vincent V.; Swanson, Gary J.

    1993-05-01

    A phase-retrieval algorithm is described and used to optimize the phase profile of a multilevel phase grating that achieves a two-dimensional Gaussian fan-out. Binary-optics technology is used to fabricate a surface-relief structure that implements this optimized phase profile. The results of the fabrication process are summarized, and the experimental measurements on the fan-out element are presented. Differences between theory and experiment arise from scalar-theory approximations used in the design algorithm. In order to illustrate the scalar-theory limitations, a rigorous formulation is used to analyze the diffraction efficiency and the reconstruction error of a representative binary surface-relief phase grating as a function of the period-to-wavelength ratio. The analysis serves to show qualitatively the effects of the period-to-wavelength ratio on the performance of free-space optical interconnects designed with a scalar-theory formalism.

  9. A multilevel preconditioner for domain decomposition boundary systems

    SciTech Connect

    Bramble, J.H.; Pasciak, J.E.; Xu, Jinchao.

    1991-12-11

    In this note, we consider multilevel preconditioning of the reduced boundary systems which arise in non-overlapping domain decomposition methods. It will be shown that the resulting preconditioned systems have condition numbers which be bounded in the case of multilevel spaces on the whole domain and grow at most proportional to the number of levels in the case of multilevel boundary spaces without multilevel extensions into the interior.

  10. Multi-level block permutation

    PubMed Central

    Winkler, Anderson M.; Webster, Matthew A.; Vidaurre, Diego; Nichols, Thomas E.; Smith, Stephen M.

    2015-01-01

    Under weak and reasonable assumptions, mainly that data are exchangeable under the null hypothesis, permutation tests can provide exact control of false positives and allow the use of various non-standard statistics. There are, however, various common examples in which global exchangeability can be violated, including paired tests, tests that involve repeated measurements, tests in which subjects are relatives (members of pedigrees) — any dataset with known dependence among observations. In these cases, some permutations, if performed, would create data that would not possess the original dependence structure, and thus, should not be used to construct the reference (null) distribution. To allow permutation inference in such cases, we test the null hypothesis using only a subset of all otherwise possible permutations, i.e., using only the rearrangements of the data that respect exchangeability, thus retaining the original joint distribution unaltered. In a previous study, we defined exchangeability for blocks of data, as opposed to each datum individually, then allowing permutations to happen within block, or the blocks as a whole to be permuted. Here we extend that notion to allow blocks to be nested, in a hierarchical, multi-level definition. We do not explicitly model the degree of dependence between observations, only the lack of independence; the dependence is implicitly accounted for by the hierarchy and by the permutation scheme. The strategy is compatible with heteroscedasticity and variance groups, and can be used with permutations, sign flippings, or both combined. We evaluate the method for various dependence structures, apply it to real data from the Human Connectome Project (HCP) as an example application, show that false positives can be avoided in such cases, and provide a software implementation of the proposed approach. PMID:26074200

  11. The motion of interconnected flexible bodies

    NASA Technical Reports Server (NTRS)

    Hopkins, A. S.

    1975-01-01

    The equations of motion for an arbitrarily interconnected collection of substructures are derived. The substructures are elastic bodies which may be idealized as finite element assemblies and are subject to small deformations relative to a nominal state. Interconnections between the elastic substructures permit large relative translations and rotations between substructures, governed by Pfaffian constraints describing the connections. Screw connections (permitting rotation about and translation along a single axis) eliminate constraint forces and incorporate modal coupling. The problem of flexible spacecraft simulation is discussed. Hurty's component mode approach is extended by permitting interconnected elastic substructures large motions relative to each other and relative to inertial space. The hybrid coordinate methods are generalized by permitting all substructures to be flexible (rather than only the terminal members of a topological tree of substructures). The basic relationships of continuum mechanics are developed.

  12. Interconnection Testing of Distributed Resources: Preprint

    SciTech Connect

    Kroposki, B.; Basso, T.; DeBlasio, R.

    2004-02-01

    With the publication of IEEE 1547-2003(TM) Standard for Interconnecting Distributed Resources With Electric Power Systems, the electric power industry has a need to develop tests and procedures to verify that interconnection equipment meets 1547 technical requirements. A new standard, IEEE P1547.1(TM), is being written to give detailed tests and procedures for confirming that equipment meets the interconnection requirements. The National Renewable Energy Laboratory has been validating test procedures being developed as part of IEEE P1547.1. As work progresses on the validation of those procedures, information and test reports are passed on to the working group of IEEE P1547.1 for future revisions.

  13. Automotion of domain walls for spintronic interconnects

    SciTech Connect

    Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.

    2014-06-07

    We simulate “automotion,” the transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate without longitudinal charge current transfer, with only a transient current pulse at domain wall creation and have favorable scaling down to the 20 nm dimension. Cases of both in-plane and out-of-plane magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, attenuation and disappearance, and reflection of domain walls are demonstrated through simulation. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.

  14. Random walk centrality in interconnected multilayer networks

    NASA Astrophysics Data System (ADS)

    Solé-Ribalta, Albert; De Domenico, Manlio; Gómez, Sergio; Arenas, Alex

    2016-06-01

    Real-world complex systems exhibit multiple levels of relationships. In many cases they require to be modeled as interconnected multilayer networks, characterizing interactions of several types simultaneously. It is of crucial importance in many fields, from economics to biology and from urban planning to social sciences, to identify the most (or the less) influent nodes in a network using centrality measures. However, defining the centrality of actors in interconnected complex networks is not trivial. In this paper, we rely on the tensorial formalism recently proposed to characterize and investigate this kind of complex topologies, and extend two well known random walk centrality measures, the random walk betweenness and closeness centrality, to interconnected multilayer networks. For each of the measures we provide analytical expressions that completely agree with numerically results.

  15. Automotion of domain walls for spintronic interconnects

    NASA Astrophysics Data System (ADS)

    Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.

    2014-06-01

    We simulate "automotion," the transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate without longitudinal charge current transfer, with only a transient current pulse at domain wall creation and have favorable scaling down to the 20 nm dimension. Cases of both in-plane and out-of-plane magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, attenuation and disappearance, and reflection of domain walls are demonstrated through simulation. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.

  16. Metallic nanowire networks

    DOEpatents

    Song, Yujiang; Shelnutt, John A.

    2012-11-06

    A metallic nanowire network synthesized using chemical reduction of a metal ion source by a reducing agent in the presence of a soft template comprising a tubular inverse micellar network. The network of interconnected polycrystalline nanowires has a very high surface-area/volume ratio, which makes it highly suitable for use in catalytic applications.

  17. Mediation from Multilevel to Structural Equation Modeling

    PubMed Central

    MacKinnon, David P.; Valente, Matthew J.

    2016-01-01

    Background/Aims The purpose of this article is to outline multilevel structural equation modeling (MSEM) for mediation analysis of longitudinal data. The introduction of mediating variables can improve experimental and nonexperimental studies of child growth in several ways as discussed throughout this article. Single-mediator individual-level and multilevel mediation models illustrate several current issues in the estimation of mediation with longitudinal data. The strengths of incorporating structural equation modeling (SEM) with multilevel mediation modeling are described. Summary and Key Messages Longitudinal mediation models are pervasive in many areas of research including child growth. Longitudinal mediation models are ideally modeled as repeated measurements clustered within individuals. Further, the combination of MSEM and SEM provides an ideal approach for several reasons, including the ability to assess effects at different levels of analysis, incorporation of measurement error and possible random effects that vary across individuals. PMID:25413658

  18. Automatic multilevel medical image annotation and retrieval.

    PubMed

    Mueen, A; Zainuddin, R; Baba, M Sapiyan

    2008-09-01

    Image retrieval at the semantic level mostly depends on image annotation or image classification. Image annotation performance largely depends on three issues: (1) automatic image feature extraction; (2) a semantic image concept modeling; (3) algorithm for semantic image annotation. To address first issue, multilevel features are extracted to construct the feature vector, which represents the contents of the image. To address second issue, domain-dependent concept hierarchy is constructed for interpretation of image semantic concepts. To address third issue, automatic multilevel code generation is proposed for image classification and multilevel image annotation. We make use of the existing image annotation to address second and third issues. Our experiments on a specific domain of X-ray images have given encouraging results. PMID:17846834

  19. Multilevel modeling in psychosomatic medicine research.

    PubMed

    Myers, Nicholas D; Brincks, Ahnalee M; Ames, Allison J; Prado, Guillermo J; Penedo, Frank J; Benedict, Catherine

    2012-01-01

    The primary purpose of this study is to provide an overview of multilevel modeling for Psychosomatic Medicine readers and contributors. The article begins with a general introduction to multilevel modeling. Multilevel regression modeling at two levels is emphasized because of its prevalence in psychosomatic medicine research. Simulated data sets based on some core ideas from the Familias Unidas effectiveness study are used to illustrate key concepts including communication of model specification, parameter interpretation, sample size and power, and missing data. Input and key output files from Mplus and SAS are provided. A cluster randomized trial with repeated measures (i.e., three-level regression model) is then briefly presented with simulated data based on some core ideas from a cognitive-behavioral stress management intervention in prostate cancer. PMID:23107843

  20. Multilevel Modeling in Psychosomatic Medicine Research

    PubMed Central

    Myers, Nicholas D.; Brincks, Ahnalee M.; Ames, Allison J.; Prado, Guillermo J.; Penedo, Frank J.; Benedict, Catherine

    2012-01-01

    The primary purpose of this manuscript is to provide an overview of multilevel modeling for Psychosomatic Medicine readers and contributors. The manuscript begins with a general introduction to multilevel modeling. Multilevel regression modeling at two-levels is emphasized because of its prevalence in psychosomatic medicine research. Simulated datasets based on some core ideas from the Familias Unidas effectiveness study are used to illustrate key concepts including: communication of model specification, parameter interpretation, sample size and power, and missing data. Input and key output files from Mplus and SAS are provided. A cluster randomized trial with repeated measures (i.e., three-level regression model) is then briefly presented with simulated data based on some core ideas from a cognitive behavioral stress management intervention in prostate cancer. PMID:23107843

  1. Formulation and Application of the Generalized Multilevel Facets Model

    ERIC Educational Resources Information Center

    Wang, Wen-Chung; Liu, Chih-Yu

    2007-01-01

    In this study, the authors develop a generalized multilevel facets model, which is not only a multilevel and two-parameter generalization of the facets model, but also a multilevel and facet generalization of the generalized partial credit model. Because the new model is formulated within a framework of nonlinear mixed models, no efforts are…

  2. Graphene Nanoribbons (GNRs) for Future Interconnect

    NASA Astrophysics Data System (ADS)

    Saptono Duryat, Rahmat

    2016-05-01

    Selecting and developing materials for the future devices require a sound understanding of design requirements. Miniaturization of electronic devices, as commonly expressed by Moore Law, has involved the integration level. Increase of the level has caused some consequences in the design and selection of materials for interconnection. The present paper deals with the challenge of materials design and selection beyond the nanoscale limit and the ability of traditional materials to cope with. One of the emerging materials, i.e. Graphene, will be reviewed with particular reference to its characteristics and potentials for future interconnection.

  3. Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

    NASA Astrophysics Data System (ADS)

    Keller, R. R.; Geiss, R. H.; Cheng, Y.-W.; Read, D. T.

    2005-09-01

    We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density, we used controlled Joule heating to simulate in an accelerated manner the type of low frequency thermal stress cycles that an interconnect structure may undergo. Sources of such stressing may include power cycling, energy-saving modes, or application-specific fluctuations, as opposed to stressing at chip operating frequencies. The thermal stresses are caused by differences in thermal expansion properties between the metal and constraining substrate or passivation. Test conditions included a frequency of 100 Hz and current density of 11 - 16 MA/cm2, which led to a cyclic temperature amplitude of approximately 100 K, and corresponding cyclic stress amplitude in excess of 100 MPa for Al-1Si and Cu lines on oxidized silicon. The failure mechanism differs from that observed in direct current electromigration studies, and involves formation of localized plasticity, which causes topography changes on the less-constrained surfaces of the interconnect. Open circuit eventually took place by melting at a region of severely reduced cross-sectional area. In these studies, both Al-1Si and Cu responded to power cycling by deforming in a manner that was highly dependent upon variations in grain size and orientation. Isolated patches of damage appeared early within the confines of individual grains or clusters of grains, as determined by automated electron backscatter diffraction. With increased cycling or with increased current density, the extent of damage became more severe and widespread. We discuss the utility of electrical methods for accelerated testing of mechanical reliability.

  4. Multilevel transport solution of LWR reactor cores

    SciTech Connect

    Jose Ignacio Marquez Damian; Cassiano R.E. de Oliveira; HyeonKae Park

    2008-09-01

    This work presents a multilevel approach for the solution of the transport equation in typical LWR assemblies and core configurations. It is based on the second-order, even-parity formulation of the transport equation, which is solved within the framework provided by the finite element-spherical harmonics code EVENT. The performance of the new solver has been compared with that of the standard conjugate gradient solver for diffusion and transport problems on structured and unstruc-tured grids. Numerical results demonstrate the potential of the multilevel scheme for realistic reactor calculations.

  5. Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

    NASA Astrophysics Data System (ADS)

    Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Kim, Jong Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; Choi, Yang-Kyu; Choi, Sung-Yool

    2016-09-01

    An increasing demand for nonvolatile memory has driven extensive research on resistive switching memory because it uses simple structures with high density, fast switching speed, and low power consumption. To improve the storage density, the application of multilevel cells is among the most promising solutions, including three-dimensional cross-point array architectures. Two-dimensional nanomaterials have several advantages as resistive switching media, including flexibility, low cost, and simple fabrication processes. However, few reports exist on multilevel nonvolatile memory and its switching mechanism. We herein present a multilevel resistive switching memory based on graphene oxide (GO) and MoS2 fabricated by a simple spin-coating process. Metallic 1T-MoS2 nanosheets, chemically exfoliated by Li intercalation, were successfully embedded between two GO layers as charge-trapping sites. The resulting stacks of GO/MoS2/GO exhibited excellent nonvolatile memory performance with at least four resistance states, >102 endurance cycles, and >104 s retention time. Furthermore, the charge transport mechanism was systematically investigated through the analysis of low-frequency 1/f noise in various resistance states, which could be modulated by the input voltage bias in the negative differential resistance region. Accordingly, we propose a strategy to achieve multilevel nonvolatile memory in which the stacked layers of two-dimensional nanosheets are utilized as resistive and charge-storage materials.

  6. Revised Record of Decision for the Electrical Interconnection of the Summit/Westward Project

    SciTech Connect

    N /A

    2004-10-21

    The Bonneville Power Administration (BPA) has decided to amend its July 25, 2003, Record of Decision (ROD) regarding the proposed Summit/Westward Project (Project) to offer contract terms for an optional interconnection of this Project into the Federal Columbia River Transmission System (FCRTS). Under this optional interconnection plan, BPA would integrate electric power from the Project into the FCRTS at a point adjacent to Clatskanie People's Utility District (CPUD) existing Wauna Substation. In order to deliver power to this location, CPUD would develop a new substation (Bradbury Substation) at a site near the Project and a new 230-kV transmission line from there to CPUD's Wauna Substation, which is already connected to the FCRTS. As part of this revised decision, BPA will facilitate CPUD development of the Bradbury-Wauna transmission line by allowing joint use of BPA right-of-way. This will involve reconstructing a section of BPA's 115-kV Allston-Astoria No. 1 transmission line from single-circuit H-frame wood-pole design to double-circuit single metal pole design. Terms of BPA participation in CPUD's development of the Bradbury-Wauna transmission line will be documented in a Construction Agreement. This optional interconnection plan is in addition to BPA's previous offer for interconnection of the Project at BPA's Allston Substation, as documented in the July 25, 2003, ROD. As with the initial interconnection plan, the decision to offer terms to interconnect the Project through the optional interconnection plan is consistent with BPA's Business Plan Final Environmental Impact Statement (BP EIS) (DOE/EIS-0183, June 1995), and the Business Plan Record of Decision (BP ROD, August 1995). This decision thus is similarly tiered to the Business Plan ROD.

  7. Pressure activated interconnection of micro transfer printed components

    NASA Astrophysics Data System (ADS)

    Prevatte, Carl; Guven, Ibrahim; Ghosal, Kanchan; Gomez, David; Moore, Tanya; Bonafede, Salvatore; Raymond, Brook; Trindade, António Jose; Fecioru, Alin; Kneeburg, David; Meitl, Matthew A.; Bower, Christopher A.

    2016-05-01

    Micro transfer printing and other forms of micro assembly deterministically produce heterogeneously integrated systems of miniaturized components on non-native substrates. Most micro assembled systems include electrical interconnections to the miniaturized components, typically accomplished by metal wires formed on the non-native substrate after the assembly operation. An alternative scheme establishing interconnections during the assembly operation is a cost-effective manufacturing method for producing heterogeneous microsystems, and facilitates the repair of integrated microsystems, such as displays, by ex post facto addition of components to correct defects after system-level tests. This letter describes pressure-concentrating conductor structures formed on silicon (1 0 0) wafers to establish connections to preexisting conductive traces on glass and plastic substrates during micro transfer printing with an elastomer stamp. The pressure concentrators penetrate a polymer layer to form the connection, and reflow of the polymer layer bonds the components securely to the target substrate. The experimental yield of series-connected test systems with >1000 electrical connections demonstrates the suitability of the process for manufacturing, and robustness of the test systems against exposure to thermal shock, damp heat, and mechanical flexure shows reliability of the resulting bonds.

  8. Silicon photonics for compact, energy-efficient interconnects [Invited

    NASA Astrophysics Data System (ADS)

    Barwicz, T.; Byun, H.; Gan, F.; Holzwarth, C. W.; Popovic, M. A.; Rakich, P. T.; Watts, M. R.; Ippen, E. P.; Kã¤Rtner, F. X.; Smith, H. I.; Orcutt, J. S.; Ram, R. J.; Stojanovic, V.; Olubuyide, O. O.; Hoyt, J. L.; Spector, S.; Geis, M.; Grein, M.; Lyszczarz, T.; Yoon, J. U.

    2007-01-01

    The goal of the research program that we describe is to break the emerging performance wall in microprocessor development arising from limited bandwidth and density of on-chip interconnects and chip-to-chip (processor-to-memory) electrical interfaces. Complementary metal-oxide semiconductor compatible photonic devices provide an infrastructure for deployment of a range of integrated photonic networks, which will replace state-of-the-art electrical interconnects, providing significant gains at the system level. Scaling of wavelength-division-multiplexing (WDM) architectures using high-index-contrast (HIC) waveguides offers one path to realizing the energy efficiency and density requirements of high data rate links. HIC microring-resonator filters are well suited to support add-drop nodes in dense WDM photonic networks with high aggregate data rates because they support high Q's and, due to their traveling-wave character, naturally support physically separated input and drop ports. A novel reconfigurable, 'hitless' switch is presented that does not perturb the express channels either before, during, or after reconfiguration. In addition, multigigahertz operation of low-power, Mach-Zehnder silicon modulators as well as germanium-on-silicon photodiodes are presented.

  9. Optical interconnections to focal plane arrays

    SciTech Connect

    Rienstra, J.L.; Hinckley, M.K.

    2000-11-01

    The authors have successfully demonstrated an optical data interconnection from the output of a focal plane array to the downstream data acquisition electronics. The demonstrated approach included a continuous wave laser beam directed at a multiple quantum well reflectance modulator connected to the focal plane array analog output. The output waveform from the optical interconnect was observed on an oscilloscope to be a replica of the input signal. They fed the output of the optical data link to the same data acquisition system used to characterize focal plane array performance. Measurements of the signal to noise ratio at the input and output of the optical interconnection showed that the signal to noise ratio was reduced by a factor of 10 or more. Analysis of the noise and link gain showed that the primary contributors to the additional noise were laser intensity noise and photodetector receiver noise. Subsequent efforts should be able to reduce these noise sources considerably and should result in substantially improved signal to noise performance. They also observed significant photocurrent generation in the reflectance modulator that imposes a current load on the focal plane array output amplifier. This current loading is an issue with the demonstrated approach because it tends to negate the power saving feature of the reflectance modulator interconnection concept.

  10. Electric network interconnection of Mashreq Arab Countries

    SciTech Connect

    El-Amin, I.M.; Al-Shehri, A.M.; Opoku, G.; Al-Baiyat, S.A.; Zedan, F.M.

    1994-12-01

    Power system interconnection is a well established practice for a variety of technical and economical reasons. Several interconnected networks exist worldwide for a number of factors. Some of these networks cross international boundaries. This presentation discusses the future developments of the power systems of Mashreq Arab Countries (MAC). MAC consists of Bahrain, Egypt, Iraq, Jordan, Kuwait, Lebanon, Oman, Qatar, Saudi Arabia, United Arab Emirates (UAE), and Yemen. Mac power systems are operated by government or semigovernment bodies. Many of these countries have national or regional electric grids but are generally isolated from each other. With the exception of Saudi Arabia power systems, which employ 60 Hz, all other MAC utilities use 50 Hz frequency. Each country is served by one utility, except Saudi Arabia, which is served by four major utilities and some smaller utilities serving remote towns and small load centers. The major utilities are the Saudi Consolidated electric Company in the Eastern Province (SCECO East), SCECO Center, SCECO West, and SCECO South. These are the ones considered in this study. The energy resources in MAC are varied. Countries such as Egypt, Iraq, and Syria have significant hydro resources.The gulf countries and Iraq have abundant fossil fuel, The variation in energy resources as well as the characteristics of the electric load make it essential to look into interconnections beyond the national boundaries. Most of the existing or planned interconnections involve few power systems. A study involving 12 countries and over 20 utilities with different characteristics represents a very large scale undertaking.

  11. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flap interconnection. 23.701 Section 23.701 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap...

  12. 14 CFR 23.701 - Flap interconnection.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Flap interconnection. 23.701 Section 23.701 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION AIRCRAFT AIRWORTHINESS STANDARDS: NORMAL, UTILITY, ACROBATIC, AND COMMUTER CATEGORY AIRPLANES Design and Construction Control Systems § 23.701 Flap...

  13. Healing Voids In Interconnections In Integrated Circuits

    NASA Technical Reports Server (NTRS)

    Cuddihy, Edward F.; Lawton, Russell A.; Gavin, Thomas

    1989-01-01

    Unusual heat treatment heals voids in aluminum interconnections on integrated circuits (IC's). Treatment consists of heating IC to temperature between 200 degrees C and 400 degrees C, holding it at that temperature, and then plunging IC immediately into liquid nitrogen. Typical holding time at evaluated temperature is 30 minutes.

  14. 47 CFR 51.305 - Interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... interface or protocol standards shall constitute evidence of the substantial similarity of network..., interconnection with the incumbent LEC's network: (1) For the transmission and routing of telephone exchange...'s network including, at a minimum: (i) The line-side of a local switch; (ii) The trunk-side of...

  15. A continuum model for interconnected lattice trusses

    NASA Technical Reports Server (NTRS)

    Balakrishnan, A. V.

    1992-01-01

    A continuum model for interconnected lattice trusses based on the 1D Timoshenko beam approximation is developed using the NASA-LRC Phase Zero Evolutionary Model. The continuum model dynamics is presented in the canonical wave-equation form in a Hilbert space.

  16. Vector Lyapunov Functions for Stochastic Interconnected Systems

    NASA Technical Reports Server (NTRS)

    Boussalis, D.

    1985-01-01

    Theoretical paper presents set of sufficient conditions for asymptotic and exponential stability with probability 1 for class of stochastic interconnected systems. Theory applicable to complicated, large-scale mechanical or electrical systems, and, for several design problems, it reduces computational difficulty by relating stability criteria to fundamental structural features of system.

  17. 47 CFR 95.1313 - Interconnection prohibited.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... prohibited. MURS stations are prohibited from interconnection with the public switched network... facilities of the public switched telephone network to permit the transmission of messages or signals between points in the wireline or radio network of a public telephone company and persons served by...

  18. Spin-Torque Sensors for Energy Efficient High-Speed Long Interconnects

    NASA Astrophysics Data System (ADS)

    Azim, Zubair Al; Sengupta, Abhronil; Sarwar, Syed Shakib; Roy, Kaushik

    2016-02-01

    In this paper, we propose a Spin-Torque (ST) based sensing scheme that can enable energy efficient multi-bit long distance interconnect architectures. Current-mode interconnects have recently been proposed to overcome the performance degradations associated with conventional voltage mode Copper (Cu) interconnects. However, the performance of current mode interconnects are limited by analog current sensing transceivers and equalization circuits. As a solution, we propose the use of ST based receivers that use Magnetic Tunnel Junctions (MTJ) and simple digital components for current-to-voltage conversion and do not require analog transceivers. We incorporate Spin-Hall Metal (SHM) in our design to achieve high speed sensing. We show both single and multi-bit operations that reveal major benefits at higher speeds. Our simulation results show that the proposed technique consumes only 3.93-4.72 fJ/bit/mm energy while operating at 1-2 Gbits/sec; which is considerably better than existing charge based interconnects. In addition, Voltage Controlled Magnetic Anisotropy (VCMA) can reduce the required current at the sensor. With the inclusion of VCMA, the energy consumption can be further reduced to 2.02-4.02 fJ/bit/mm

  19. Novel Composite Materials for SOFC Cathode-Interconnect Contact

    SciTech Connect

    J. H. Zhu

    2009-07-31

    This report summarized the research efforts and major conclusions of our University Coal Research Project, which focused on developing a new class of electrically-conductive, Cr-blocking, damage-tolerant Ag-perovksite composite materials for the cathode-interconnect contact of intermediate-temperature solid oxide fuel cell (SOFC) stacks. The Ag evaporation rate increased linearly with air flow rate initially and became constant for the air flow rate {ge} {approx} 1.0 cm {center_dot} s{sup -1}. An activation energy of 280 KJ.mol{sup -1} was obtained for Ag evaporation in both air and Ar+5%H{sub 2}+3%H{sub 2}O. The exposure environment had no measurable influence on the Ag evaporation rate as well as its dependence on the gas flow rate, while different surface morphological features were developed after thermal exposure in the oxidizing and reducing environments. Pure Ag is too volatile at the SOFC operating temperature and its evaporation rate needs to be reduced to facilitate its application as the cathode-interconnect contact. Based on extensive evaporation testing, it was found that none of the alloying additions reduced the evaporation rate of Ag over the long-term exposure, except the noble metals Au, Pt, and Pd; however, these noble elements are too expensive to justify their practical use in contact materials. Furthermore, the addition of La{sub 0.8}Sr{sub 0.2}MnO{sub 3} (LSM) into Ag to form a composite material also did not significantly modify the Ag evaporation rate. The Ag-perovskite composites with the perovskite being either (La{sub 0.6}Sr{sub 0.4})(Co{sub 0.8}Fe{sub 0.2})O{sub 3} (LSCF) or LSM were systematically evaluated as the contact material between the ferritic interconnect alloy Crofer 22 APU and the LSM cathode. The area specific resistances (ASRs) of the test specimens were shown to be highly dependent on the volume percentage and the type of the perovskite present in the composite contact material as well as the amount of thermal cycling

  20. Constructions of Factorizable Multilevel Hadamard Matrices

    NASA Astrophysics Data System (ADS)

    Matsufuji, Shinya; Fan, Pingzhi

    Factorization of Hadamard matrices can provide fast algorithm and facilitate efficient hardware realization. In this letter, constructions of factorizable multilevel Hadamard matrices, which can be considered as special case of unitary matrices, are inverstigated. In particular, a class of ternary Hadamard matrices, together with its application, is presented.

  1. BER estimation for multilevel modulation formats

    NASA Astrophysics Data System (ADS)

    Louchet, Hadrien; Kuzmin, Konstantin; Koltchanov, Igor; Richter, André

    2009-11-01

    We review existing BER estimation methods and propose alternative methods to assess the performance of multilevel modulation formats with both direct and coherent detection. The impact of digital signal processing (DSP) on the BER estimation procedure is discussed for the latter case. The different approaches are illustrated by simulating exemplary transmission systems.

  2. Single-Level and Multilevel Mediation Analysis

    ERIC Educational Resources Information Center

    Tofighi, Davood; Thoemmes, Felix

    2014-01-01

    Mediation analysis is a statistical approach used to examine how the effect of an independent variable on an outcome is transmitted through an intervening variable (mediator). In this article, we provide a gentle introduction to single-level and multilevel mediation analyses. Using single-level data, we demonstrate an application of structural…

  3. New multilevel codes over GF(q)

    NASA Technical Reports Server (NTRS)

    Wu, Jiantian; Costello, Daniel J., Jr.

    1992-01-01

    Set partitioning to multi-dimensional signal spaces over GF(q), particularly GF sup q-1(q) and GF sup q (q), and show how to construct both multi-level block codes and multi-level trellis codes over GF(q). Two classes of multi-level (n, k, d) block codes over GF(q) with block length n, number of information symbols k, and minimum distance d sub min greater than or = d, are presented. These two classes of codes use Reed-Solomon codes as component codes. They can be easily decoded as block length q-1 Reed-Solomon codes or block length q or q + 1 extended Reed-Solomon codes using multi-stage decoding. Many of these codes have larger distances than comparable q-ary block codes, as component codes. Low rate q-ary convolutional codes, work error correcting convolutional codes, and binary-to-q-ary convolutional codes can also be used to construct multi-level trellis codes over GF(q) or binary-to-q-ary trellis codes, some of which have better performance than the above block codes. All of the new codes have simple decoding algorithms based on hard decision multi-stage decoding.

  4. Engineering applications of heuristic multilevel optimization methods

    NASA Technical Reports Server (NTRS)

    Barthelemy, Jean-Francois M.

    1989-01-01

    Some engineering applications of heuristic multilevel optimization methods are presented and the discussion focuses on the dependency matrix that indicates the relationship between problem functions and variables. Coordination of the subproblem optimizations is shown to be typically achieved through the use of exact or approximate sensitivity analysis. Areas for further development are identified.

  5. Engineering applications of heuristic multilevel optimization methods

    NASA Technical Reports Server (NTRS)

    Barthelemy, Jean-Francois M.

    1988-01-01

    Some engineering applications of heuristic multilevel optimization methods are presented and the discussion focuses on the dependency matrix that indicates the relationship between problem functions and variables. Coordination of the subproblem optimizations is shown to be typically achieved through the use of exact or approximate sensitivity analysis. Areas for further development are identified.

  6. Using Multilevel Modeling in Counseling Research

    ERIC Educational Resources Information Center

    Lynch, Martin F.

    2012-01-01

    This conceptual and practical overview of multilevel modeling (MLM) for researchers in counseling and development provides guidelines on setting up SPSS to perform MLM and an example of how to present the findings. It also provides a discussion on how counseling and developmental researchers can use MLM to address their own research questions.…

  7. Multilevel Factor Models for Ordinal Variables

    ERIC Educational Resources Information Center

    Grilli, Leonardo; Rampichini, Carla

    2007-01-01

    This article tackles several issues involved in specifying, fitting, and interpreting the results of multilevel factor models for ordinal variables. First, the problem of model specification and identification is addressed, outlining parameter interpretation. Special attention is devoted to the consequences on interpretation stemming from the…

  8. Efficiently Exploring Multilevel Data with Recursive Partitioning

    ERIC Educational Resources Information Center

    Martin, Daniel P.; von Oertzen, Timo; Rimm-Kaufman, Sara E.

    2015-01-01

    There is an increasing number of datasets with many participants, variables, or both, in education and other fields that often deal with large, multilevel data structures. Once initial confirmatory hypotheses are exhausted, it can be difficult to determine how best to explore the dataset to discover hidden relationships that could help to inform…

  9. A Practical Guide to Multilevel Modeling

    ERIC Educational Resources Information Center

    Peugh, James L.

    2010-01-01

    Collecting data from students within classrooms or schools, and collecting data from students on multiple occasions over time, are two common sampling methods used in educational research that often require multilevel modeling (MLM) data analysis techniques to avoid Type-1 errors. The purpose of this article is to clarify the seven major steps…

  10. Multilevel training of binary morphological operators.

    PubMed

    Hirata, Nina S T

    2009-04-01

    The design of binary morphological operators that are translation-invariant and locally defined by a finite neighborhood window corresponds to the problem of designing Boolean functions. As in any supervised classification problem, morphological operators designed from training sample also suffer from overfitting. Large neighborhood tends to lead to performance degradation of the designed operator. This work proposes a multi-level design approach to deal with the issue of designing large neighborhood based operators. The main idea is inspired from stacked generalization (a multi-level classifier design approach) and consists in, at each training level, combining the outcomes of the previous level operators. The final operator is a multi-level operator that ultimately depends on a larger neighborhood than of the individual operators that have been combined. Experimental results show that two-level operators obtained by combining operators designed on subwindows of a large window consistently outperforms the single-level operators designed on the full window. They also show that iterating two-level operators is an effective multi-level approach to obtain better results. PMID:19229085

  11. The Economic Cost of Homosexuality: Multilevel Analyses

    ERIC Educational Resources Information Center

    Baumle, Amanda K.; Poston, Dudley, Jr.

    2011-01-01

    This article builds on earlier studies that have examined "the economic cost of homosexuality," by using data from the 2000 U.S. Census and by employing multilevel analyses. Our findings indicate that partnered gay men experience a 12.5 percent earnings penalty compared to married heterosexual men, and a statistically insignificant earnings…

  12. Interconnect assembly for an electronic assembly and assembly method therefor

    DOEpatents

    Gerbsch, Erich William

    2003-06-10

    An interconnect assembly and method for a semiconductor device, in which the interconnect assembly can be used in lieu of wirebond connections to form an electronic assembly. The interconnect assembly includes first and second interconnect members. The first interconnect member has a first surface with a first contact and a second surface with a second contact electrically connected to the first contact, while the second interconnect member has a flexible finger contacting the second contact of the first interconnect member. The first interconnect member is adapted to be aligned and registered with a semiconductor device having a contact on a first surface thereof, so that the first contact of the first interconnect member electrically contacts the contact of the semiconductor device. Consequently, the assembly method does not require any wirebonds, but instead merely entails aligning and registering the first interconnect member with the semiconductor device so that the contacts of the first interconnect member and the semiconductor device make electrically contact, and then contacting the second contact of the first interconnect member with the flexible finger of the second interconnect member.

  13. Dual damascene BEOL processing using multilevel step and flash imprint lithography

    NASA Astrophysics Data System (ADS)

    Chao, Brook H.; Palmieri, Frank; Jen, Wei-Lun; McMichael, D. Hale; Willson, C. Grant; Owens, Jordan; Berger, Rich; Sotoodeh, Ken; Wilks, Bruce; Pham, Joseph; Carpio, Ronald; LaBelle, Ed; Wetzel, Jeff

    2008-03-01

    Step and Flash Imprint Lithography (S-FIL®) in conjunction with Sacrificial Imprint Materials (SIM) shows promise as a cost effective solution to patterning sub 45nm features and is capable of simultaneously patterning two levels of interconnect structures, which provides a high throughput and low cost BEOL process. This paper describes the integration of S-FIL into an industry standard Cu/low-k dual damascene process that is being practiced in the ATDF at Sematech in Austin. The pattern transferring reactive ion etching (RIE) process is the most critical step and was extensively explored in this study. In addition to successful process development, the results provide useful insight into the optimal design of multilevel templates which must take into account the characteristics of both the imaging material and the dielectric layer. The template used in this study incorporates both the via and trench levels of an M2 (Metal 2) test vehicle that incorporates via chains with varying via dimensions, Kelvin test structures, serpentines, etc. The smallest vias on the template are 120nm vias with an aspect ratio of 2.0 and the smallest dense lines are 125nm/175nm with an aspect ratio of 2.9. Two inter-level dielectrics (ILD), Coral® and Black Diamond® were studied. No trench etch stop was incorporated in the ILD film stack. A multi-step, in-situ etching scheme was developed that achieves faithful pattern transfer from the sacrificial imprint material (SIM) into the underlying low k ILD with surprisingly wide process latitude. This multi-step scheme includes the following etch steps: a residual layer open, a via etch, a trench descum, a trench etch, and an SIM removal ash. Among these steps, the trench etch was found to be the most challenging to develop and it holds the key to producing high aspect ratio dual damascene features. An etching chemistry based on two fluorocarbon gases, CF 4 and C 4F 8, was found to be very effective in delivering the desired etch profiles

  14. FUNDAMENTAL STUDIES OF THE DURABILITY OF MATERIALS FOR INTERCONNECTS IN SOLID OXIDE FUEL CELLS

    SciTech Connect

    Frederick S. Pettit; Gerald H. Meier

    2003-06-30

    This report describes the result of the first eight months of effort on a project directed at improving metallic interconnect materials for solid oxide fuel cells (SOFCs). The results include cyclic oxidation studies of a group of ferritic alloys, which are candidate interconnect materials. The exposures have been carried out in simulated fuel cell atmospheres. The oxidation morphologies have been characterized and the ASR has been measured for the oxide scales. The effect of fuel cell electric current density on chromia growth rates has been considered The thermomechanical behavior of the scales has been investigated by stress measurements using x-ray diffraction and interfacial fracture toughness measurements using indentation. The ultimate goal of this thrust is to use knowledge of changes in oxide thickness, stress and adhesion to develop accelerated testing methods for evaluating SOFC interconnect alloys. Finally a theoretical assessment of the potential for use of ''new'' metallic materials as interconnect materials has been conducted and is presented in this report. Alloys being considered include materials based on pure nickel, materials based on the ''Invar'' concept, and coated materials to optimize properties in both the anode and cathode gases.

  15. National Offshore Wind Energy Grid Interconnection Study Full Report

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Gregory; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  16. High temperature solid electrolyte fuel cell configurations and interconnections

    DOEpatents

    Isenberg, Arnold O.

    1984-01-01

    High temperature fuel cell configurations and interconnections are made including annular cells having a solid electrolyte sandwiched between thin film electrodes. The cells are electrically interconnected along an elongated axial outer surface.

  17. National Offshore Wind Energy Grid Interconnection Study Executive Summary

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Gregory; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States.

  18. Integrated silicon photonic interconnect with surface-normal optical interface

    NASA Astrophysics Data System (ADS)

    Zhang, Zanyun; Huang, Beiju; Zhang, Zan; Cheng, Chuantong; Liu, Hongwei; Li, Hongqiang; Chen, Hongda

    2016-05-01

    An integrated silicon photonic interconnect with surface-normal optical interface is demonstrated by connecting a bidirectional grating based E-O modulator and a germanium waveguide photodetector. To investigate this photonic interconnect, both static and dynamic performance of the discrete devices are characterized respectively. Based on the characterization work, data transmission experiment is carried out for the photonic interconnect. Eye diagram results indicate the photonic interconnect can operate up to 7 Gb/s.

  19. 14 CFR 29.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flow between interconnected tanks. 29.957... AIRCRAFT AIRWORTHINESS STANDARDS: TRANSPORT CATEGORY ROTORCRAFT Powerplant Fuel System § 29.957 Flow between interconnected tanks. (a) Where tank outlets are interconnected and allow fuel to flow...

  20. 14 CFR 23.957 - Flow between interconnected tanks.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Flow between interconnected tanks. 23.957... Fuel System § 23.957 Flow between interconnected tanks. (a) It must be impossible, in a gravity feed system with interconnected tank outlets, for enough fuel to flow between the tanks to cause an...

  1. Development of Interconnect Technologies for Particle Detectors

    SciTech Connect

    Tripathi, Mani

    2015-01-29

    This final report covers the three years of this grant, for the funding period 9/1/2010 - 8/31/2013. The project consisted of generic detector R&D work at UC Davis, with an emphasis on developing interconnect technologies for applications in HEP. Much of the work is done at our Facility for Interconnect Technologies (FIT) at UC Davis. FIT was established using ARRA funds, with further studies supported by this grant. Besides generic R&D work at UC Davis, FIT is engaged in providing bump bonding help to several DOE supported detector R&D efforts. Some of the developmental work was also supported by funding from other sources: continuing CMS project funds and the Linear Collider R&D funds. The latter program is now terminated. The three year program saw a good deal of progress on several fronts, which are reported here.

  2. Release Resistant Electrical Interconnections For Mems Devices

    DOEpatents

    Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.

    2005-02-22

    A release resistant electrical interconnection comprising a gold-based electrical conductor compression bonded directly to a highly-doped polysilicon bonding pad in a MEMS, IMEMS, or MOEMS device, without using any intermediate layers of aluminum, titanium, solder, or conductive adhesive disposed in-between the conductor and polysilicon pad. After the initial compression bond has been formed, subsequent heat treatment of the joint above 363 C creates a liquid eutectic phase at the bondline comprising gold plus approximately 3 wt % silicon, which, upon re-solidification, significantly improves the bond strength by reforming and enhancing the initial bond. This type of electrical interconnection is resistant to chemical attack from acids used for releasing MEMS elements (HF, HCL), thereby enabling the use of a "package-first, release-second" sequence for fabricating MEMS devices. Likewise, the bond strength of an Au--Ge compression bond may be increased by forming a transient liquid eutectic phase comprising Au-12 wt % Ge.

  3. Epidemic spread on interconnected metapopulation networks

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Tanaka, Gouhei; Suzuki, Hideyuki; Aihara, Kazuyuki

    2014-09-01

    Numerous real-world networks have been observed to interact with each other, resulting in interconnected networks that exhibit diverse, nontrivial behavior with dynamical processes. Here we investigate epidemic spreading on interconnected networks at the level of metapopulation. Through a mean-field approximation for a metapopulation model, we find that both the interaction network topology and the mobility probabilities between subnetworks jointly influence the epidemic spread. Depending on the interaction between subnetworks, proper controls of mobility can efficiently mitigate epidemics, whereas an extremely biased mobility to one subnetwork will typically cause a severe outbreak and promote the epidemic spreading. Our analysis provides a basic framework for better understanding of epidemic behavior in related transportation systems as well as for better control of epidemics by guiding human mobility patterns.

  4. Epidemic spread on interconnected metapopulation networks.

    PubMed

    Wang, Bing; Tanaka, Gouhei; Suzuki, Hideyuki; Aihara, Kazuyuki

    2014-09-01

    Numerous real-world networks have been observed to interact with each other, resulting in interconnected networks that exhibit diverse, nontrivial behavior with dynamical processes. Here we investigate epidemic spreading on interconnected networks at the level of metapopulation. Through a mean-field approximation for a metapopulation model, we find that both the interaction network topology and the mobility probabilities between subnetworks jointly influence the epidemic spread. Depending on the interaction between subnetworks, proper controls of mobility can efficiently mitigate epidemics, whereas an extremely biased mobility to one subnetwork will typically cause a severe outbreak and promote the epidemic spreading. Our analysis provides a basic framework for better understanding of epidemic behavior in related transportation systems as well as for better control of epidemics by guiding human mobility patterns. PMID:25314481

  5. Architecture for on-die interconnect

    DOEpatents

    Khare, Surhud; More, Ankit; Somasekhar, Dinesh; Dunning, David S.

    2016-03-15

    In an embodiment, an apparatus includes: a plurality of islands configured on a semiconductor die, each of the plurality of islands having a plurality of cores; and a plurality of network switches configured on the semiconductor die and each associated with one of the plurality of islands, where each network switch includes a plurality of output ports, a first set of the output ports are each to couple to the associated network switch of an island via a point-to-point interconnect and a second set of the output ports are each to couple to the associated network switches of a plurality of islands via a point-to-multipoint interconnect. Other embodiments are described and claimed.

  6. Interconnection of bundled solid oxide fuel cells

    SciTech Connect

    Brown, Michael; Bessette, II, Norman F; Litka, Anthony F; Schmidt, Douglas S

    2014-01-14

    A system and method for electrically interconnecting a plurality of fuel cells to provide dense packing of the fuel cells. Each one of the plurality of fuel cells has a plurality of discrete electrical connection points along an outer surface. Electrical connections are made directly between the discrete electrical connection points of adjacent fuel cells so that the fuel cells can be packed more densely. Fuel cells have at least one outer electrode and at least one discrete interconnection to an inner electrode, wherein the outer electrode is one of a cathode and and anode and wherein the inner electrode is the other of the cathode and the anode. In tubular solid oxide fuel cells the discrete electrical connection points are spaced along the length of the fuel cell.

  7. A covariance analysis algorithm for interconnected systems

    NASA Technical Reports Server (NTRS)

    Cheng, Victor H. L.; Curley, Robert D.; Lin, Ching-An

    1987-01-01

    A covariance analysis algorithm for propagation of signal statistics in arbitrarily interconnected nonlinear systems is presented which is applied to six-degree-of-freedom systems. The algorithm uses statistical linearization theory to linearize the nonlinear subsystems, and the resulting linearized subsystems are considered in the original interconnection framework for propagation of the signal statistics. Some nonlinearities commonly encountered in six-degree-of-freedom space-vehicle models are referred to in order to illustrate the limitations of this method, along with problems not encountered in standard deterministic simulation analysis. Moreover, the performance of the algorithm shall be numerically exhibited by comparing results using such techniques to Monte Carlo analysis results, both applied to a simple two-dimensional space-intercept problem.

  8. Folded fibre bus interconnects with distributed amplification

    NASA Astrophysics Data System (ADS)

    Lorenzo, Raul Hernandez; Urquhart, Paul; Lopez-Amo, Manuel

    1998-06-01

    An optical fibre network for application as an interconnect within major nodes is investigated theoretically. The network is configured as a folded bus in which the spine consists of erbium doped fibre to overcome the power division at the couplers. It is argued that high received powers with a narrow dynamic range can be obtained simultaneously with bit rates in the order of 10 Gbit/s and bit error rates of 10 -12 or less.

  9. Bioactive macroporous titanium implants highly interconnected.

    PubMed

    Caparrós, Cristina; Ortiz-Hernandez, Mónica; Molmeneu, Meritxell; Punset, Miguel; Calero, José Antonio; Aparicio, Conrado; Fernández-Fairén, Mariano; Perez, Román; Gil, Francisco Javier

    2016-10-01

    Intervertebral implants should be designed with low load requirements, high friction coefficient and low elastic modulus in order to avoid the stress shielding effect on bone. Furthermore, the presence of a highly interconnected porous structure allows stimulating bone in-growth and enhancing implant-bone fixation. The aim of this study was to obtain bioactive porous titanium implants with highly interconnected pores with a total porosity of approximately 57 %. Porous Titanium implants were produced by powder sintering route using the space holder technique with a binder phase and were then evaluated in an in vivo study. The size of the interconnection diameter between the macropores was about 210 μm in order to guarantee bone in-growth through osteblastic cell penetration. Surface roughness and mechanical properties were analyzed. Stiffness was reduced as a result of the powder sintering technique which allowed the formation of a porous network. Compression and fatigue tests exhibited suitable properties in order to guarantee a proper compromise between mechanical properties and pore interconnectivity. Bioactivity treatment effect in novel sintered porous titanium materials was studied by thermo-chemical treatments and were compared with the same material that had undergone different bioactive treatments. Bioactive thermo-chemical treatment was confirmed by the presence of sodium titanates on the surface of the implants as well as inside the porous network. Raman spectroscopy results suggested that the identified titanate structures would enhance in vivo apatite formation by promoting ion exchange for the apatite formation process. In vivo results demonstrated that the bioactive titanium achieved over 75 % tissue colonization compared to the 40 % value for the untreated titanium. PMID:27582071

  10. Implementation of interconnect simulation tools in spice

    NASA Technical Reports Server (NTRS)

    Satsangi, H.; Schutt-Aine, J. E.

    1993-01-01

    Accurate computer simulation of high speed digital computer circuits and communication circuits requires a multimode approach to simulate both the devices and the interconnects between devices. Classical circuit analysis algorithms (lumped parameter) are needed for circuit devices and the network formed by the interconnected devices. The interconnects, however, have to be modeled as transmission lines which incorporate electromagnetic field analysis. An approach to writing a multimode simulator is to take an existing software package which performs either lumped parameter analysis or field analysis and add the missing type of analysis routines to the package. In this work a traditionally lumped parameter simulator, SPICE, is modified so that it will perform lossy transmission line analysis using a different model approach. Modifying SPICE3E2 or any other large software package is not a trivial task. An understanding of the programming conventions used, simulation software, and simulation algorithms is required. This thesis was written to clarify the procedure for installing a device into SPICE3E2. The installation of three devices is documented and the installations of the first two provide a foundation for installation of the lossy line which is the third device. The details of discussions are specific to SPICE, but the concepts will be helpful when performing installations into other circuit analysis packages.

  11. Modeling and synthesis of multicomputer interconnection networks

    NASA Technical Reports Server (NTRS)

    Standley, Hilda M.; Auxter, D. Steve

    1990-01-01

    The type of interconnection network employed has a profound effect on the performance of a multicomputer and multiprocessor design. Adequate models are needed to aid in the design and development of interconnection networks. A novel modeling approach using statistical and optimization techniques is described. This method represents an attempt to compare diverse interconnection network designs in a way that allows not only the best of existing designs to be identified but to suggest other, perhaps hybrid, networks that may offer better performance. Stepwise linear regression is used to develop a polynomial surface representation of performance in a (k+1) space with a total of k quantitative and qualitative independent variables describing graph-theoretic characteristics such as size, average degree, diameter, radius, girth, node-connectivity, edge-connectivity, minimum dominating set size, and maximum number of prime node and edge cutsets. Dependent variables used to measure performance are average message delay and the ratio of message completion rate to network connection cost. Response Surface Methodology (RSM) optimizes a response variable from a polynomial function of several independent variables. Steepest ascent path may also be used to approach optimum points.

  12. Optical interconnections on printed circuit boards

    NASA Astrophysics Data System (ADS)

    Griese, Elmar

    2000-05-01

    In this paper an optical interconnection technology for high-speed printed circuit board application is presented. This technology is widely compatible with the existing design and manufacturing technologies of conventional multi- layer pc boards and it combines electrical and optical interconnects on pc board level. Using this interconnection technology on-board bandwidth of several Gbps can be realized. As conventional pc board technology provides sufficient performance characteristics for the majority of all on-board signals only a hybrid technology which is compatible to the existing printed circuit board design and manufacturing processes is able to lead to a practical solution at reasonable cost. This compatibility demand results in different technological, functional, and economic requirements which also consider potential application for high performance computing and telecommunication hardware. In this paper an overview is given on the requirements, on the basic technologies for manufacturing electrical-optical pc boards as well as on the extended design process with its modeling and simulation methodologies and strategies.

  13. Dimensioning of nearby substations interconnected ground system

    SciTech Connect

    Sobral, S.T. ); Costa, V.S. ); Campos, M.S.; Goldman, B. ); Mukhedkar, D. )

    1988-10-01

    This paper deals with the ground mat dimensioning of two or more neighbor interconnected substations, a situation that is very common in the Electrical Industry. The paper recalls that the external ground circuits connected to the ground grid of each substation can drastically reduce the percentage of total ground current injected into the soil through the mat (from 40% up to 2% of the total fault current). The paper presents a set of specific calculation procedures to deal with nearby interconnected ground mats. These procedures correspond to a particular illustration of the general ''Decoupled Method'' (3,4,5), showing how to apply its 8 sequencial steps to solve this type of circuit. The paper shows that the electric neighborhood of nearby substations depends on the ''Space Constant'' (or ''Characteristic Length'') of the ground circuits interconnecting them such as transmission line ground-wires, power cable sheaths, etc. This paper complements also Ref. (3,4), introducing the complete derivation of useful expressions used to solve lumped parameter ladder circuits of any size (from one pi to an infinite number of pis). The derivation of these expressions also used in (3,4) were not included in these References due to lack of space. In the paper it is also shown a simple procedure to determine the suitable number of ACSR ground-wire spans near a substation necessary to allow a reduction of the ground grid conductor extension.

  14. Synchrotron X-Ray Microdiffraction Studies of Electromigration in Interconnect lines at the Advanced Light Source

    SciTech Connect

    Tamura, Nobumichi; Chen, Kai; Kunz, Martin

    2009-12-01

    Synchrotron polychromatic X-ray microdiffraction is a particularly suitable technique to study in situ the effect of electromigration in metal interconnects as add spatial resolution to grain orientation and strain sensitivity. This technique has been extensively used at the Advanced Light Source to monitor changes in aluminum and copper interconnect test structures while high-density current is passed into them during accelerated tests at elevated temperature. One of the principal findings is the observation of electromigration-induced plasticity in the metal lines that appear during the very early stages of electromigration. In some of the lines, high density of geometrically necessary dislocation are formed leading to additional diffusion paths causing an enhancement of electromigration effect at test temperature.

  15. Translating multilevel theory into multilevel research: Challenges and opportunities for understanding the social determinants of psychiatric disorders

    PubMed Central

    Dunn, Erin C.; Masyn, Katherine E.; Yudron, Monica; Jones, Stephanie M.; Subramanian, S.V.

    2014-01-01

    The observation that features of the social environment, including family, school, and neighborhood characteristics, are associated with individual-level outcomes has spurred the development of dozens of multilevel or ecological theoretical frameworks in epidemiology, public health, psychology, and sociology, among other disciplines. Despite the widespread use of such theories in etiological, intervention, and policy studies, challenges remain in bridging multilevel theory and empirical research. This paper set out to synthesize these challenges and provide specific examples of methodological and analytical strategies researchers are using to gain a more nuanced understanding of the social determinants of psychiatric disorders, with a focus on children’s mental health. To accomplish this goal, we begin by describing multilevel theories, defining their core elements, and discussing what these theories suggest is needed in empirical work. In the second part, we outline the main challenges researchers face in translating multilevel theory into research. These challenges are presented for each stage of the research process. In the third section, we describe two methods being used as alternatives to traditional multilevel modeling techniques to better bridge multilevel theory and multilevel research. These are: (1) multilevel factor analysis and multilevel structural equation modeling; and (2) dynamic systems approaches. Through its review of multilevel theory, assessment of existing strategies, and examination of emerging methodologies, this paper offers a framework to evaluate and guide empirical studies on the social determinants of child psychiatric disorders as well as health across the lifecourse. PMID:24469555

  16. Potential roles of optical interconnections within broadband switching modules

    NASA Astrophysics Data System (ADS)

    Lalk, Gail R.; Habiby, Sarry F.; Hartman, Davis H.; Krchnavek, Robert R.; Wilson, Donald K.; Young, Kenneth C., Jr.

    1991-04-01

    An investigation of potential physical design bottlenecks in future broadband telecommunication switches has led to the identification of several areas where optical interconnections may play a role in the practical realization of required system performance. In the model used the speed and interconnection densities as well as requirements for ease-of-access and efficient power utilization challenge conventional partitioning and packaging strategies. Potential areas where optical interconnections may relieve some of the physical design bottlenecks include fiber management at the customer interface to the switch routing and distribution of high-density interconnections within the fabric of the switch and backplane interconnections to increase system throughput.

  17. Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

    SciTech Connect

    Robertson, J.; Zhong, G.; Telg, H.; Thomsen, C.; Warner, J. H.; Briggs, G. A. D.; Dettlaff-Weglikowska, U.; Roth, S.

    2008-10-20

    We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al{sub 2}O{sub 3} thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes.

  18. Computational modeling and multilevel cancer control interventions.

    PubMed

    Morrissey, Joseph P; Lich, Kristen Hassmiller; Price, Rebecca Anhang; Mandelblatt, Jeanne

    2012-05-01

    This chapter presents an overview of computational modeling as a tool for multilevel cancer care and intervention research. Model-based analyses have been conducted at various "beneath the skin" or biological scales as well as at various "above the skin" or socioecological levels of cancer care delivery. We review the basic elements of computational modeling and illustrate its applications in four cancer control intervention areas: tobacco use, colorectal cancer screening, cervical cancer screening, and racial disparities in access to breast cancer care. Most of these models have examined cancer processes and outcomes at only one or two levels. We suggest ways these models can be expanded to consider interactions involving three or more levels. Looking forward, a number of methodological, structural, and communication barriers must be overcome to create useful computational models of multilevel cancer interventions and population health. PMID:22623597

  19. Multilevel Inverters for Electric Vehicle Applications

    SciTech Connect

    Habetler, T.G.; Peng, F.Z.; Tolbert, L.M.

    1998-10-22

    This paper presents multilevel inverters as an application for all-electric vehicle (EV) and hybrid-electric vehicle (HEV) motor drives. Diode-clamped inverters and cascaded H-bridge inverters, (1) can generate near-sinusoidal voltages with only fundamental frequency switching; (2) have almost no electromagnetic interference (EMI) and common-mode voltage; and (3) make an EV more accessible/safer and open wiring possible for most of an EV'S power system. This paper explores the benefits and discusses control schemes of the cascade inverter for use as an EV motor drive or a parallel HEV drive and the diode-clamped inverter as a series HEV motor drive. Analytical, simulated, and experimental results show the superiority of these multilevel inverters for this new niche.

  20. Polymer optical interconnect technology (POINT): optoelectronic packaging and interconnect for board and backplane applications

    NASA Astrophysics Data System (ADS)

    Liu, Yung S.; Wojnarowski, R. J.; Hennessy, W. A.; Bristow, Julian P.; Liu, Yue; Peczalski, Andrzej; Rowlette, John R.; Plotts, Alan; Stack, Jared D.; Yardley, James T.; Eldada, L.; Osgood, Richard M.; Scarmozzino, Robert; Lee, Sing H.; Ozguz, Volkan H.

    1996-01-01

    The polymer optical interconnect technology (POINT) represents a major collaborative effort among GE, Honeywell, AMP, AlliedSignal, Columbia University and the University of California at San Diego (UCSD), sponsored by ARPA, in developing affordable optoelectronic module packaging and interconnect technologies for board- and backplane-level optical interconnect applications for a wide range of military and commercial applications. The POINT program takes a novel development approach by fully leveraging the existing electronic design, processing, fabrication, and module packaging technologies to optoelectronic module packaging. The POINT program further incorporates several state-of- the-art optoelectronic technologies that include high-speed VCSEL for multichannel array data transmission; flexible optical polymers such as PolyguideTM or coupling of device-to- fiber using a passive alignment process; a low-loss polymer for backplane interconnect to provide a high I/O density; low-cost diffractive optical elements (DOE) for board-to-backplane interconnect; and use of molded MT array ferrule to reduce overall system size, weight, and cost. In addition to further reducing design and fabrication cycle times, computer simulation tools for optical waveguide and mechanical modeling will be advanced under the POINT program.

  1. Multilevel resistive information storage and retrieval

    DOEpatents

    Lohn, Andrew; Mickel, Patrick R.

    2016-08-09

    The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

  2. Automatic Multilevel Parallelization Using OpenMP

    NASA Technical Reports Server (NTRS)

    Jin, Hao-Qiang; Jost, Gabriele; Yan, Jerry; Ayguade, Eduard; Gonzalez, Marc; Martorell, Xavier; Biegel, Bryan (Technical Monitor)

    2002-01-01

    In this paper we describe the extension of the CAPO parallelization support tool to support multilevel parallelism based on OpenMP directives. CAPO generates OpenMP directives with extensions supported by the NanosCompiler to allow for directive nesting and definition of thread groups. We report first results for several benchmark codes and one full application that have been parallelized using our system.

  3. Automatic Multilevel Parallelization Using OpenMP

    NASA Technical Reports Server (NTRS)

    Jin, Hao-Qiang; Jost, Gabriele; Yan, Jerry; Ayguade, Eduard; Gonzalez, Marc; Martorell, Xavier; Biegel, Bryan (Technical Monitor)

    2002-01-01

    In this paper we describe the extension of the CAPO (CAPtools (Computer Aided Parallelization Toolkit) OpenMP) parallelization support tool to support multilevel parallelism based on OpenMP directives. CAPO generates OpenMP directives with extensions supported by the NanosCompiler to allow for directive nesting and definition of thread groups. We report some results for several benchmark codes and one full application that have been parallelized using our system.

  4. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, F.Z.; Lai, J.S.

    1997-07-01

    Disclosed is a voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means. 15 figs.

  5. Voltage balanced multilevel voltage source converter system

    DOEpatents

    Peng, Fang Zheng; Lai, Jih-Sheng

    1997-01-01

    A voltage balanced multilevel converter for high power AC applications such as adjustable speed motor drives and back-to-back DC intertie of adjacent power systems. This converter provides a multilevel rectifier, a multilevel inverter, and a DC link between the rectifier and the inverter allowing voltage balancing between each of the voltage levels within the multilevel converter. The rectifier is equipped with at least one phase leg and a source input node for each of the phases. The rectifier is further equipped with a plurality of rectifier DC output nodes. The inverter is equipped with at least one phase leg and a load output node for each of the phases. The inverter is further equipped with a plurality of inverter DC input nodes. The DC link is equipped with a plurality of rectifier charging means and a plurality of inverter discharging means. The plurality of rectifier charging means are connected in series with one of the rectifier charging means disposed between and connected in an operable relationship with each adjacent pair of rectifier DC output nodes. The plurality of inverter discharging means are connected in series with one of the inverter discharging means disposed between and connected in an operable relationship with each adjacent pair of inverter DC input nodes. Each of said rectifier DC output nodes are individually electrically connected to the respective inverter DC input nodes. By this means, each of the rectifier DC output nodes and each of the inverter DC input nodes are voltage balanced by the respective charging and discharging of the rectifier charging means and the inverter discharging means.

  6. On the effectiveness of multilevel selection.

    PubMed

    Goodnight, Charles J

    2016-01-01

    Experimental studies of group selection show that higher levels of selection act on indirect genetic effects, making the response to group and community selection qualitatively different from that of individual selection. This suggests that multilevel selection plays a key role in the evolution of supersocial societies. Experiments showing the effectiveness of community selection indicate that we should consider the possibility that selection among communities may be important in the evolution of supersocial species. PMID:27562604

  7. Multilevel sparse functional principal component analysis.

    PubMed

    Di, Chongzhi; Crainiceanu, Ciprian M; Jank, Wolfgang S

    2014-01-29

    We consider analysis of sparsely sampled multilevel functional data, where the basic observational unit is a function and data have a natural hierarchy of basic units. An example is when functions are recorded at multiple visits for each subject. Multilevel functional principal component analysis (MFPCA; Di et al. 2009) was proposed for such data when functions are densely recorded. Here we consider the case when functions are sparsely sampled and may contain only a few observations per function. We exploit the multilevel structure of covariance operators and achieve data reduction by principal component decompositions at both between and within subject levels. We address inherent methodological differences in the sparse sampling context to: 1) estimate the covariance operators; 2) estimate the functional principal component scores; 3) predict the underlying curves. Through simulations the proposed method is able to discover dominating modes of variations and reconstruct underlying curves well even in sparse settings. Our approach is illustrated by two applications, the Sleep Heart Health Study and eBay auctions. PMID:24872597

  8. Multilevel sparse functional principal component analysis

    PubMed Central

    Di, Chongzhi; Crainiceanu, Ciprian M.; Jank, Wolfgang S.

    2014-01-01

    We consider analysis of sparsely sampled multilevel functional data, where the basic observational unit is a function and data have a natural hierarchy of basic units. An example is when functions are recorded at multiple visits for each subject. Multilevel functional principal component analysis (MFPCA; Di et al. 2009) was proposed for such data when functions are densely recorded. Here we consider the case when functions are sparsely sampled and may contain only a few observations per function. We exploit the multilevel structure of covariance operators and achieve data reduction by principal component decompositions at both between and within subject levels. We address inherent methodological differences in the sparse sampling context to: 1) estimate the covariance operators; 2) estimate the functional principal component scores; 3) predict the underlying curves. Through simulations the proposed method is able to discover dominating modes of variations and reconstruct underlying curves well even in sparse settings. Our approach is illustrated by two applications, the Sleep Heart Health Study and eBay auctions. PMID:24872597

  9. Mapping the global journey of anthropogenic aluminum: a trade-linked multilevel material flow analysis.

    PubMed

    Liu, Gang; Müller, Daniel B

    2013-10-15

    Material cycles have become increasingly coupled and interconnected in a globalizing era. While material flow analysis (MFA) has been widely used to characterize stocks and flows along technological life cycle within a specific geographical area, trade networks among individual cycles have remained largely unexplored. Here we developed a trade-linked multilevel MFA model to map the contemporary global journey of anthropogenic aluminum. We demonstrate that the anthropogenic aluminum cycle depends substantially on international trade of aluminum in all forms and becomes highly interconnected in nature. While the Southern hemisphere is the main primary resource supplier, aluminum production and consumption concentrate in the Northern hemisphere, where we also find the largest potential for recycling. The more developed countries tend to have a substantial and increasing presence throughout the stages after bauxite refining and possess highly consumption-based cycles, thus maintaining advantages both economically and environmentally. A small group of countries plays a key role in the global redistribution of aluminum and in the connectivity of the network, which may render some countries vulnerable to supply disruption. The model provides potential insights to inform government and industry policies in resource criticality, supply chain security, value chain management, and cross-boundary environmental impacts mitigation. PMID:24025046

  10. Development of Ni1-xCoxO as the cathode/interconnect contact for solid oxide fuel cells

    SciTech Connect

    Lu, Zigui; Xia, Guanguang; Templeton, Joshua D.; Li, Xiaohong S.; Nie, Zimin; Yang, Zhenguo; Stevenson, Jeffry W.

    2011-06-01

    A new type of material, Ni1-xCoxO, was developed for solid oxide fuel cell (SOFC) cathode/interconnect contact applications. The phase structure, coefficient of thermal expansion, sintering behavior, electrical property, and mechanical bonding strength of these materials were evaluated against the requirements of the SOFC cathode/interconnect contact. A dense cathode/interconnect contact layer was developed through reaction sintering from Ni and Co metal powders. An area specific resistance (ASR) as low as 5.5 mohm.cm2 was observed after 1000 h exposure in air at 800 °C for the LSM/Ni0.33Co0.67O/AISI441 assembly. Average mechanical strengths of 6.8 and 5.0 MPa were obtained for the cathode/contact/cathode and interconnect/contact/interconnect structures, respectively. The significantly low ASR was probably due to the dense structure and therefore improved electrical conductivity of the Ni0.33Co0.67O contact and the good bonding of the interfaces between the contact and the cathode, and between the contact and the interconnect.

  11. Chromium vaporization from mechanically deformed pre-coated interconnects in Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Falk-Windisch, Hannes; Sattari, Mohammad; Svensson, Jan-Erik; Froitzheim, Jan

    2015-11-01

    Cathode poisoning, associated with Cr evaporation from interconnect material, is one of the most important degradation mechanisms in Solid Oxide Fuel Cells when Cr2O3-forming steels are used as the interconnect material. Coating these steels with a thin Co layer has proven to decrease Cr vaporization. To reduce production costs, it is suggested that thin metallic PVD coatings be applied to each steel strip before pressing the material into interconnect shape. This process would enable high volume production without the need for an extra post-coating step. However, when the pre-coated material is mechanically deformed, cracks may form and lower the quality of the coating. In the present study, Chromium volatilization is measured in an air-3% H2O environment at 850 °C for 336 h. Three materials coated with 600 nm Co are investigated and compared to an uncoated material. The effect of deformation is investigated on real interconnects. Microscopy observations reveal the presence of cracks in the order of several μm on the deformed pre-coated steel. However, upon exposure, the cracks can heal and form a continuous surface oxide rich in Co and Mn. As an effect of the rapid healing, no increase in Cr vaporization is measured for the pre-coated material.

  12. Spatial-light-modulator interconnected computers

    SciTech Connect

    Mc Aulay, A.D.

    1987-10-01

    Optical technologies perform the basic computer operations of communications, switching, and storage, have already proven superior to electronics for many communications situations, and advances in devices and materials suggest that optics are important for switching and storage. The spatial light modulator (SLM) is one of the devices expected to play an important role in optical computing. An SLM acts as a piece of film whose transmittance or reflectance may be varied spatially and temporally by electronic or optical means. Types of SLMs, the use of optics for computation and three proposed, as well as diverse optical computing systems that use SLMs for interconnections are described in this article.

  13. Repairable chip bonding/interconnect process

    DOEpatents

    Bernhardt, Anthony F.; Contolini, Robert J.; Malba, Vincent; Riddle, Robert A.

    1997-01-01

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder.

  14. Repairable chip bonding/interconnect process

    DOEpatents

    Bernhardt, A.F.; Contolini, R.J.; Malba, V.; Riddle, R.A.

    1997-08-05

    A repairable, chip-to-board interconnect process which addresses cost and testability issues in the multi-chip modules is disclosed. This process can be carried out using a chip-on-sacrificial-substrate technique, involving laser processing. This process avoids the curing/solvent evolution problems encountered in prior approaches, as well is resolving prior plating problems and the requirements for fillets. For repairable high speed chip-to-board connection, transmission lines can be formed on the sides of the chip from chip bond pads, ending in a gull wing at the bottom of the chip for subsequent solder. 10 figs.

  15. Environmental Regulation Impacts on Eastern Interconnection Performance

    SciTech Connect

    Markham, Penn N; Liu, Yilu; Young II, Marcus Aaron

    2013-07-01

    In the United States, recent environmental regulations will likely result in the removal of nearly 30 GW of oil and coal-fired generation from the power grid, mostly in the Eastern Interconnection (EI). The effects of this transition on voltage stability and transmission line flows have previously not been studied from a system-wide perspective. This report discusses the results of power flow studies designed to simulate the evolution of the EI over the next few years as traditional generation sources are replaced with environmentally friendlier ones such as natural gas and wind.

  16. Updating Interconnection Screens for PV System Integration

    SciTech Connect

    Coddington, M.; Mather, B.; Kroposki, B.; Lynn, K.; Razon, A.; Ellis, A.; Hill, R.; Key, T.; Nicole, K.; Smith, J.

    2012-02-01

    This white paper evaluates the origins and usefulness of the capacity penetration screen, offer short-term solutions which could effectively allow fast-track interconnection to many PV system applications, and considers longer-term solutions for increasing PV deployment levels in a safe and reliable manner while reducing or eliminating the emphasis on the penetration screen. Short-term and longer-term alternatives approaches are offered as examples; however, specific modifications to screening procedures should be discussed with stakeholders and must ultimately be adopted by state and federal regulatory bodies.

  17. Optical Interconnection Via Computer-Generated Holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang; Zhou, Shaomin

    1995-01-01

    Method of free-space optical interconnection developed for data-processing applications like parallel optical computing, neural-network computing, and switching in optical communication networks. In method, multiple optical connections between multiple sources of light in one array and multiple photodetectors in another array made via computer-generated holograms in electrically addressed spatial light modulators (ESLMs). Offers potential advantages of massive parallelism, high space-bandwidth product, high time-bandwidth product, low power consumption, low cross talk, and low time skew. Also offers advantage of programmability with flexibility of reconfiguration, including variation of strengths of optical connections in real time.

  18. Silver flip chip interconnect technology and solid state bonding

    NASA Astrophysics Data System (ADS)

    Sha, Chu-Hsuan

    In this dissertation, fluxless transient liquid phase (TLP) bonding and solid state bonding between thermal expansion mismatch materials have been developed using Ag-In binary systems, pure Au, Ag, and Cu-Ag composite. In contrast to the conventional soldering process, fluxless bonding technique eliminates any corrosion and contamination problems caused by flux. Without flux, it is possible to fabricate high quality joints in large bonding areas where the flux is difficult to clean entirely. High quality joints are crucial to bonding thermal expansion mismatch materials since shear stress develops in the bonded pair. Stress concentration at voids in joints could increases breakage probability. In addition, intermetallic compound (IMC) formation between solder and underbump metallurgy (UBM) is essential for interconnect joint formation in conventional soldering process. However, the interface between IMC and solder is shown to be the weak interface that tends to break first during thermal cycling and drop tests. In our solid state bonding technique, there is no IMC involved in the bonding between Au to Au, Ag and Cu, and Ag and Au. All the reliability issues related to IMC or IMC growth is not our concern. To sum up, ductile bonding media, such as Ag or Au, and proper metallic layered structure are utilized in this research to produce high quality joints. The research starts with developing a low temperature fluxless bonding process using electroplated Ag/In/Ag multilayer structures between Si chip and 304 stainless steel (304SS) substrate. Because the outer thin Ag layer effectively protects inner In layer from oxidation, In layer dissolves Ag layer and joints to Ag layer on the to-be-bonded Si chip when temperature reaches the reflow temperature of 166ºC. Joints consist of mainly Ag-rich Ag-In solid solution and Ag2In. Using this fluxless bonding technique, two 304SS substrates can be bonded together as well. From the high magnification SEM images taken at cross

  19. Approaching Gas Phase Electrodeposition: Process and Optimization to Enable the Self-Aligned Growth of 3D Nanobridge-Based Interconnects.

    PubMed

    Fang, Jun; Schlag, Leslie; Park, Se-Chul; Stauden, Thomas; Pezoldt, Jörg; Schaaf, Peter; Jacobs, Heiko O

    2016-03-01

    A nanowire bonding process referred to as gas-phase electrodeposition is reported to form nanobridge-based interconnects. The process is able to grow free-standing point-to-point electrical connections using metallic wires. As a demonstration, programmable interconnects and an interdigitated electrode array are shown. The process is more material efficient when compared with conventional vapor deposition since the material is directed to the point of use. PMID:26692464

  20. Self-encapsulated silver metallization and low-k polyimide for ultra-large-scale integration

    NASA Astrophysics Data System (ADS)

    Zou, Yuelin Lee

    demonstrated desirable stoichiometry and edge profile. Also, Ti can act as an etch stop during the dry etch of Ag metallization. Electromigration lifetime of Ag metallization was characterized at accelerated current densities and temperatures using NIST test structures prepared by damascene process. Voids were observed to nucleate along the metal line edge and grow in the line width direction that cause electromigration failure. It was found that the median-time-to-failure (MTF) of the silver metallization is 2.5 times better than that of AlCu alloys. In addition, the lifetime of the metallization and electromigration activation energies depending on whether the surface passivation is used for these interconnects. In a parallel work, a baseline process of a photosensitive polyimide (PSPI) was developed and the material was characterized. The polyimides are low-k materials (k = 2.6), which are thermally stable and compatible to current back-end-of-line (BEOL) environment. Moreover, the polymeric materials can be easily processed with 30-50% cycle time reduction to serve as the interlayer dielectrics as well as passivation stress buffer in multilevel interconnect structures. Electrical characterization suggested that it is critical to reduce the moisture content in the polymer films to ensure electrical isolation during the integration.

  1. Thermoelectric Coolers with Sintered Silver Interconnects

    NASA Astrophysics Data System (ADS)

    Kähler, Julian; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

    2014-06-01

    The fabrication and performance of a sintered Peltier cooler (SPC) based on bismuth telluride with sintered silver interconnects are described. Miniature SPC modules with a footprint of 20 mm2 were assembled using pick-and-place pressure-assisted silver sintering at low pressure (5.5 N/mm2) and moderate temperature (250°C to 270°C). A modified flip-chip bonder combined with screen/stencil printing for paste transfer was used for the pick-and-place process, enabling high positioning accuracy, easy handling of the tiny bismuth telluride pellets, and immediate visual process control. A specific contact resistance of (1.4 ± 0.1) × 10-5 Ω cm2 was found, which is in the range of values reported for high-temperature solder interconnects of bismuth telluride pellets. The realized SPCs were evaluated from room temperature to 300°C, considerably outperforming the operating temperature range of standard commercial Peltier coolers. Temperature cycling capability was investigated from 100°C to 235°C over more than 200 h, i.e., 850 cycles, during which no degradation of module resistance or cooling performance occurred.

  2. IETI – Isogeometric Tearing and Interconnecting

    PubMed Central

    Kleiss, Stefan K.; Pechstein, Clemens; Jüttler, Bert; Tomar, Satyendra

    2012-01-01

    Finite Element Tearing and Interconnecting (FETI) methods are a powerful approach to designing solvers for large-scale problems in computational mechanics. The numerical simulation problem is subdivided into a number of independent sub-problems, which are then coupled in appropriate ways. NURBS- (Non-Uniform Rational B-spline) based isogeometric analysis (IGA) applied to complex geometries requires to represent the computational domain as a collection of several NURBS geometries. Since there is a natural decomposition of the computational domain into several subdomains, NURBS-based IGA is particularly well suited for using FETI methods. This paper proposes the new IsogEometric Tearing and Interconnecting (IETI) method, which combines the advanced solver design of FETI with the exact geometry representation of IGA. We describe the IETI framework for two classes of simple model problems (Poisson and linearized elasticity) and discuss the coupling of the subdomains along interfaces (both for matching interfaces and for interfaces with T-joints, i.e. hanging nodes). Special attention is paid to the construction of a suitable preconditioner for the iterative linear solver used for the interface problem. We report several computational experiments to demonstrate the performance of the proposed IETI method. PMID:24511167

  3. Towards energy aware optical networks and interconnects

    NASA Astrophysics Data System (ADS)

    Glesk, Ivan; Osadola, Tolulope; Idris, Siti

    2013-10-01

    In a today's world, information technology has been identified as one of the major factors driving economic prosperity. Datacenters businesses have been growing significantly in the past few years. The equipments in these datacenters need to be efficiently connected to each other and also to the outside world in order to enable effective exchange of information. This is why there is need for highly scalable, energy savvy and reliable network connectivity infrastructure that is capable of accommodating the large volume of data being exchanged at any time within the datacenter network and the outside network in general. These devices that can ensure such effective connectivity currently require large amount of energy in order to meet up with these increasing demands. In this paper, an overview of works being done towards realizing energy aware optical networks and interconnects for datacenters is presented. Also an OCDMA approach is discussed as potential multiple access technique for future optical network interconnections. We also presented some challenges that might inhibit effective implementation of the OCDMA multiplexing scheme.

  4. Interconnected ponds operation for flood hazard distribution

    NASA Astrophysics Data System (ADS)

    Putra, S. S.; Ridwan, B. W.

    2016-05-01

    The climatic anomaly, which comes with extreme rainfall, will increase the flood hazard in an area within a short period of time. The river capacity in discharging the flood is not continuous along the river stretch and sensitive to the flood peak. This paper contains the alternatives on how to locate the flood retention pond that are physically feasible to reduce the flood peak. The flood ponds were designed based on flood curve number criteria (TR-55, USDA) with the aim of rapid flood peak capturing and gradual flood retuning back to the river. As a case study, the hydrologic condition of upper Ciliwung river basin with several presumed flood pond locations was conceptually designed. A fundamental tank model that reproducing the operation of interconnected ponds was elaborated to achieve the designed flood discharge that will flows to the downstream area. The flood hazard distribution status, as the model performance criteria, will be computed within Ciliwung river reach in Manggarai Sluice Gate spot. The predicted hazard reduction with the operation of the interconnected retention area result had been bench marked with the normal flow condition.

  5. National Offshore Wind Energy Grid Interconnection Study

    SciTech Connect

    Daniel, John P.; Liu, Shu; Ibanez, Eduardo; Pennock, Ken; Reed, Greg; Hanes, Spencer

    2014-07-30

    The National Offshore Wind Energy Grid Interconnection Study (NOWEGIS) considers the availability and potential impacts of interconnecting large amounts of offshore wind energy into the transmission system of the lower 48 contiguous United States. A total of 54GW of offshore wind was assumed to be the target for the analyses conducted. A variety of issues are considered including: the anticipated staging of offshore wind; the offshore wind resource availability; offshore wind energy power production profiles; offshore wind variability; present and potential technologies for collection and delivery of offshore wind energy to the onshore grid; potential impacts to existing utility systems most likely to receive large amounts of offshore wind; and regulatory influences on offshore wind development. The technologies considered the reliability of various high-voltage ac (HVAC) and high-voltage dc (HVDC) technology options and configurations. The utility system impacts of GW-scale integration of offshore wind are considered from an operational steady-state perspective and from a regional and national production cost perspective.

  6. Aspects of short-range interconnect packaging

    NASA Astrophysics Data System (ADS)

    Wohlfeld, Denis; Brenner, Karl-Heinz

    2012-01-01

    In short-range interconnect applications, one question arises frequently: When should optical solutions be chosen over electrical wiring? The answer to this question of course depends on several factors like costs, performance, reliability, availability of testing equipment and knowledge about optical technologies, and last but not least, it strongly depends on the application itself. Networking in high performance computing (HPC) is one such example. With bit rates around 10 Gbit/s per channel and cable length above 2 m, the high attenuation of electrical cables leads to a clear preference of optical or active optical cables (AOC) for most planned HPC systems. For AOCs, the electro-optical conversion is realized inside the connector housing, while for purely optical cables, the conversion is done at the edge of the board. Proceeding to 25 Gbit/s and higher, attenuation and loss of signal quality become critical. Therefore, either significantly more effort has to be spent on the electrical side, or the package for conversion has to be integrated closer to the chip, thus requiring new packaging technologies. The paper provides a state of the art overview of packaging concepts for short range interconnects, it describes the main challenges of optical package integration and illustrates new concepts and trends in this research area.

  7. Message Passing Framework for Globally Interconnected Clusters

    NASA Astrophysics Data System (ADS)

    Hafeez, M.; Asghar, S.; Malik, U. A.; Rehman, A.; Riaz, N.

    2011-12-01

    In prevailing technology trends it is apparent that the network requirements and technologies will advance in future. Therefore the need of High Performance Computing (HPC) based implementation for interconnecting clusters is comprehensible for scalability of clusters. Grid computing provides global infrastructure of interconnecting clusters consisting of dispersed computing resources over Internet. On the other hand the leading model for HPC programming is Message Passing Interface (MPI). As compared to Grid computing, MPI is better suited for solving most of the complex computational problems. MPI itself is restricted to a single cluster. It does not support message passing over the internet to use the computing resources of different clusters in an optimal way. We propose a model that provides message passing capabilities between parallel applications over the internet. The proposed model is based on Architecture for Java Universal Message Passing (A-JUMP) framework and Enterprise Service Bus (ESB) named as High Performance Computing Bus. The HPC Bus is built using ActiveMQ. HPC Bus is responsible for communication and message passing in an asynchronous manner. Asynchronous mode of communication offers an assurance for message delivery as well as a fault tolerance mechanism for message passing. The idea presented in this paper effectively utilizes wide-area intercluster networks. It also provides scheduling, dynamic resource discovery and allocation, and sub-clustering of resources for different jobs. Performance analysis and comparison study of the proposed framework with P2P-MPI are also presented in this paper.

  8. European Transmission Interconnection; Eurasian power grid

    SciTech Connect

    Posch, J. )

    1991-09-01

    Systems and philosophies perceived on a grand scale, encompassing new ideas, are often characterized as a dream. But in fact, such dreams often lead to the first step to fruitful development. This article is based on a preliminary study of the existing electrical high-tension networks of Western Europe, Eastern Europe and the Soviet Union - which, as explained herein, may be merged into a multinational energy supply system. Such a system would constitute a completely interconnected Eurasian Power Grid. The idea of a Eurasian super grid, spanning from the Atlantic to the Ural and Siberia, is not new. Various studies have been conducted by both western Europe and the Soviet Union on this topic. Our world is currently in an era of extra high voltage (EHV) and ultra high voltage (UHV) electrical systems. This translates into existing UHV lines of 1150 kV which have already been proven in successful operation. Such UHV systems are capable of transmitting thousands of megawatts over a distance of a 1000 miles. Furthermore, national boundaries are not more a hindrance than the challenge of interconnecting complete networks into an overall synchronized working system with load exchange capabilities in all directions.

  9. Digital High Speed Interconnects: A Study Of The Optical Alternative

    NASA Astrophysics Data System (ADS)

    Hartman, Davis H.

    1986-10-01

    The use of optics as an alternative method for achieving very high speed (10 Gb/s > bit rate > 500 Mb/s) electrical interconnects is the subject of this paper. Optical interconnect media considered include plastic channel waveguides, glass waveguides, fibers, and free-space interconnects. Typical interconnection distances considered are inches or less. The problems of cou-pling and interconnecting and their overall effect on system power budgets are also discussed. As a means of quantifying the results, link budgets for a 565 Mb/s, a 2.3 Gb/s, and a 4.6 Gb/s interconnect scenario are made. Multipoint as well as single-point-to-single-point situations are considered.

  10. Reconfigurable optical interconnections via dynamic computer-generated holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang (Inventor); Zhou, Shaomin (Inventor)

    1994-01-01

    A system is proposed for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for largescale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  11. Reconfigurable Optical Interconnections Via Dynamic Computer-Generated Holograms

    NASA Technical Reports Server (NTRS)

    Liu, Hua-Kuang (Inventor); Zhou, Shao-Min (Inventor)

    1996-01-01

    A system is presented for optically providing one-to-many irregular interconnections, and strength-adjustable many-to-many irregular interconnections which may be provided with strengths (weights) w(sub ij) using multiple laser beams which address multiple holograms and means for combining the beams modified by the holograms to form multiple interconnections, such as a cross-bar switching network. The optical means for interconnection is based on entering a series of complex computer-generated holograms on an electrically addressed spatial light modulator for real-time reconfigurations, thus providing flexibility for interconnection networks for large-scale practical use. By employing multiple sources and holograms, the number of interconnection patterns achieved is increased greatly.

  12. Alternatives to Multilevel Modeling for the Analysis of Clustered Data

    ERIC Educational Resources Information Center

    Huang, Francis L.

    2016-01-01

    Multilevel modeling has grown in use over the years as a way to deal with the nonindependent nature of observations found in clustered data. However, other alternatives to multilevel modeling are available that can account for observations nested within clusters, including the use of Taylor series linearization for variance estimation, the design…

  13. Matching Strategies for Observational Data with Multilevel Structure

    ERIC Educational Resources Information Center

    Steiner, Peter M.

    2011-01-01

    Given the different possibilities of matching in the context of multilevel data and the lack of research on corresponding matching strategies, the author investigates two main research questions. The first research question investigates the advantages and disadvantages of different matching strategies that can be pursued with multilevel data…

  14. A Multilevel Analysis of Parental Discipline and Child Antisocial Behavior

    ERIC Educational Resources Information Center

    Stoolmiller, Mike; Snyder, Jim

    2004-01-01

    We demonstrate graphical and analytical methods for multilevel (2- and 3-level) models using the analysis of observed microsocial interaction between parent-child dyads as an example. We also present multilevel path diagrams and argue that while not as compact as equations, path diagrams may communicate results better to a wider audience. The…

  15. Multilevel Higher-Order Item Response Theory Models

    ERIC Educational Resources Information Center

    Huang, Hung-Yu; Wang, Wen-Chung

    2014-01-01

    In the social sciences, latent traits often have a hierarchical structure, and data can be sampled from multiple levels. Both hierarchical latent traits and multilevel data can occur simultaneously. In this study, we developed a general class of item response theory models to accommodate both hierarchical latent traits and multilevel data. The…

  16. How does psychotherapy work? A case study in multilevel explanation.

    PubMed

    Roache, Rebecca

    2015-01-01

    Multilevel explanations abound in psychiatry. However, formulating useful such explanations is difficult or (some argue) impossible. I point to several ways in which Lane et al. successfully use multilevel explanations to advance understanding of psychotherapeutic effectiveness. I argue that the usefulness of an explanation depends largely on one's purpose, and conclude that this point has been inadequately recognised in psychiatry. PMID:26050687

  17. Application of optical interconnect technology at Lawrence Livermore National Laboratory

    SciTech Connect

    Haigh, R.E.; Lowry, M.E.; McCammon, K.; Hills, R.; Mitchell, R.; Sweider, D.

    1995-08-10

    Optical interconnects will be required to meet the information bandwidth requirements of future communication and computing applications. At Lawrence Livermore National Laboratory, the authors are involved in applying optical interconnect technologies in two distinct application areas: Multi-Gigabit/sec Computer Backplanes and Gigabit/sec Wide Area Networking using Wavelength Division Multiplexing. In this paper, the authors discuss their efforts to integrate optical interconnect technologies into prototype computing and communication systems.

  18. Probability density function modeling for sub-powered interconnects

    NASA Astrophysics Data System (ADS)

    Pater, Flavius; Amaricǎi, Alexandru

    2016-06-01

    This paper proposes three mathematical models for reliability probability density function modeling the interconnect supplied at sub-threshold voltages: spline curve approximations, Gaussian models,and sine interpolation. The proposed analysis aims at determining the most appropriate fitting for the switching delay - probability of correct switching for sub-powered interconnects. We compare the three mathematical models with the Monte-Carlo simulations of interconnects for 45 nm CMOS technology supplied at 0.25V.

  19. Investigation of welded interconnection of large area wraparound contacted silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lott, D. R.

    1984-01-01

    An investigation was conducted to evaluate the welding and temperature cycle testing of large area 5.9 x 5.9 wraparound silicon solar cells utilizing printed circuit substrates with SSC-155 interconnect copper metals and the LMSC Infrared Controlled weld station. An initial group of 5 welded modules containing Phase 2 developmental 5.9 x 5.9 cm cells were subjected to cyclical temperatures of + or 80 C at a rate of 120 cycles per day. Anomalies were noted in the adhesion of the cell contact metallization; therefore, 5 additional modules were fabricated and tested using available Phase I cells with demonstrated contact integrity. Cycling of the later module type through 12,000 cycles indicated the viability of this type of lightweight flexible array concept. This project demonstrated acceptable use of an alternate interconnect copper in combination with large area wraparound cells and emphasized the necessity to implement weld pull as opposed to solder pull procedures at the cell vendors for cells that will be interconnected by welding.

  20. Synchrotron X-Ray Microdiffraction Studies of Electromigration in Interconnect lines at the Advanced Light Source

    SciTech Connect

    Tamura, Nobumichi; Chen, Kai; Kunz, Martin

    2009-05-01

    Synchrotron polychromatic X-ray microdiffraction is a particularly suitable technique to study in situ the effect of electromigration in metal interconnects as add spatial resolution to grain orientation and strain sensitivity. This technique has been extensively used at the Advanced Light Source to monitor changes in aluminum and copper interconnect test structures while high-density current is passed into them during accelerated tests at elevated temperature. One of the principal findings is the observation of electromigration-induced plasticity in the metal lines that appear during the very early stages of electromigration. In some of the lines, high density of geometrically necessary dislocation are formed leading to additional diffusion paths causing an enhancement of electromigration effect at test temperature. This paper presents an overview of the principal results obtained from X-ray microdiffraction studies of electromigration effects on aluminum and copper interconnects at the ALS throughout continuous efforts that spanned over a decade (1998-2008) from approximately 40 weeks of combined beamtime.

  1. Development and Application of HVOF Sprayed Spinel Protective Coating for SOFC Interconnects

    NASA Astrophysics Data System (ADS)

    Thomann, O.; Pihlatie, M.; Rautanen, M.; Himanen, O.; Lagerbom, J.; Mäkinen, M.; Varis, T.; Suhonen, T.; Kiviaho, J.

    2013-06-01

    Protective coatings are needed for metallic interconnects used in solid oxide fuel cell (SOFC) stacks to prevent excessive high-temperature oxidation and evaporation of chromium species. These phenomena affect the lifetime of the stacks by increasing the area-specific resistance (ASR) and poisoning of the cathode. Protective MnCo2O4 and MnCo1.8Fe0.2O4 coatings were applied on ferritic steel interconnect material (Crofer 22 APU) by high velocity oxy fuel spraying. The substrate-coating systems were tested in long-term exposure tests to investigate their high-temperature oxidation behavior. Additionally, the ASRs were measured at 700 °C for 1000 h. Finally, a real coated interconnect was used in a SOFC single-cell stack for 6000 h. Post-mortem analysis was carried out with scanning electron microscopy. The deposited coatings reduced significantly the oxidation of the metal, exhibited low and stable ASR and reduced effectively the migration of chromium.

  2. Direct electron beam patterning of sub-5nm monolayer graphene interconnects

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing J.; Rodríguez-Manzo, Julio A.; Hong, Sung Ju; Park, Yung Woo; Stach, Eric A.; Drndić, Marija; Johnson, A. T. Charlie

    2013-03-01

    The industry's march towards higher transistor density has called for an ever-increasing number of interconnect levels in logic devices. The historic transition from aluminum to copper was necessary in reducing timing delays while future technology nodes presents an opportunity for new materials and patterning techniques. One material for consideration is graphene, a single atomic layer of carbon atoms. Graphene is known to have excellent electrical properties [1], driving strong interest in its integration into the wafer fabrication processes for future electronics [2], and its ballistic transport properties give promise for use in on-chip interconnects [3]. This study demonstrates the feasibility of a direct electron beam lithography technique to pattern sub-5nm metallic graphene ribbons, without using a mask or photoresist, to act as next generation interconnects. Sub-5nm monolayer and multilayer graphene ribbons were patterned using a focused electron beam in a transmission electron microscope (TEM) through direct knock-on ejection of carbon atoms. These ribbons were measured during fabrication to quantify their electrical performance. Multilayered graphene nanoribbons were found to sustain current densities in excess of 109 A/cm2, orders of magnitude higher than copper, while monolayer graphene provides comparable performance to copper but at the level of a single atomic layer. High volume manufacturing could utilize wafer-size chemical vapor deposition (CVD) graphene [4] transferred directly onto the substrate paired with a direct write multi-beam tool to knock off carbon atoms for patterning of nanometer sized interconnects. The patterning technique introduced here allows for the fabrication of small foot-print high performance next generation graphene interconnects that bypass the use of a mask and resist process.

  3. Impact of Cu/low-k Interconnect Design on Chip Package Interaction in Flip Chip Package

    NASA Astrophysics Data System (ADS)

    Uchibori, C. J.; Lee, Michael; Zhang, Xuefeng; Ho, P. S.; Nakamura, T.

    2009-06-01

    The impacts of Cu/low-k interconnect structures and solder bump layouts on Chip Package Interaction (CPI) in Flip Chip Ball Grid Array (FCBGA) was investigated. The energy release rates (ERR) that indicate the driving force for delamination were calculated to evaluate the impact of CPI on mechanical reliability of Cu/low-k in FCBGA. First, two metal layer interconnect structure was modeled to find the effects of the mechanical properties of inter layer dielectric (ILD) materials on ERR. The ERR was found to increase rapidly when the modulus of ILD is lower than 10 GPa. Then the number of the interconnect layer was increased to four to find the impact of wiring dimensions on CPI. The ERR at the upper interface were consistently higher than those of lower interface. However, when TEOS is used for M4 level, low-k is used for M3 and Ultra low-k is used for M2 and M1 level, the ERR at M3 level becomes higher than that at M4 level. The wiring dimension and mechanical properties of ILD were found to be important in controlling CPI. Then the number of interconnect layer was increased to seven and nine layers where the dimension was determined by 65 nm technology rule. The ERR increased with increasing the crack length which indicates that the crack will keep growing when it generates. Finally, arranging the dummy bump was found to be effective to reduce the peeling stress at outermost bump. Then, the impact of interconnect design and material properties of ILD on CPI will be discussed.

  4. Oscillations in interconnected complex networks under intentional attack

    NASA Astrophysics Data System (ADS)

    Zhang, Wen-Ping; Xia, Yongxiang; Tan, Fei

    2016-01-01

    Many real-world networks are interconnected with each other. In this paper, we study the traffic dynamics in interconnected complex networks under an intentional attack. We find that with the shortest time delay routing strategy, the traffic dynamics can show the stable state, periodic, quasi-periodic and chaotic oscillations, when the capacity redundancy parameter changes. Moreover, compared with isolated complex networks, oscillations always take place in interconnected networks more easily. Thirdly, in interconnected networks, oscillations are affected strongly by the coupling probability and coupling preference.

  5. Reaction-diffusion processes on interconnected scale-free networks

    NASA Astrophysics Data System (ADS)

    Garas, Antonios

    2015-08-01

    We study the two-particle annihilation reaction A +B →∅ on interconnected scale-free networks, using different interconnecting strategies. We explore how the mixing of particles and the process evolution are influenced by the number of interconnecting links, by their functional properties, and by the interconnectivity strategies in use. We show that the reaction rates on this system are faster than what was observed in other topologies, due to the better particle mixing that suppresses the segregation effect, in line with previous studies performed on single scale-free networks.

  6. Compact Interconnection Networks Based on Quantum Dots

    NASA Technical Reports Server (NTRS)

    Fijany, Amir; Toomarian, Nikzad; Modarress, Katayoon; Spotnitz, Matthew

    2003-01-01

    Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary

  7. Wired up: interconnecting two-dimensional materials with one-dimensional atomic chains.

    PubMed

    Rong, Youmin; Warner, Jamie H

    2014-12-23

    Atomic wires are chains of atoms sequentially bonded together and epitomize the structural form of a one-dimensional (1D) material. In graphene, they form as interconnects between regions when the nanoconstriction eventually becomes so narrow that it is reduced to one atom thick. In this issue of ACS Nano, Cretu et al. extend the discovery of 1D atomic wire interconnects in two-dimensional (2D) materials to hexagonal boron nitride. We highlight recent progress in the area of 1D atomic wires within 2D materials, with a focus on their atomic-level structural analysis using aberration-corrected transmission electron microscopy. We extend this discussion to the formation of nanowires in transition metal dichalcogenides under similar electron-beam irradiation conditions. The future outlook for atomic wires is considered in the context of new 2D materials and hybrids of C, B, and N. PMID:25474120

  8. Mechanical Effects of Hafnium and Boron Addition to Aluminum Alloy Films for Submicrometer LSI Interconnects

    NASA Astrophysics Data System (ADS)

    Onoda, Hiroshi; Takahashi, Eishi; Kawai, Yasuaki; Madokoro, Shoji; Fukuyo, Hideaki; Sawada, Susumu

    1993-11-01

    This is the first report on the mechanical properties of hafnium- and boron-added Al-Si-Cu alloy film for LSI interconnects. Two to three hundred ppm of hafnium and boron addition into Al-Si-Cu alloy film does not influence the Al alloy properties for metal lines as LSI interconnects, such as its low resistivity, low ohmic contact resistance with Si, and fine-line patterning feasibility. The mechanical properties of the Al alloy film, however, change greatly. Vertical hillock and lateral hillock formation is considerably suppressed during heat treatments used in LSI fabrication processes. Stress-induced void formation is also reduced during aging test at 125°C. These effects due to hafnium and boron addition are considered to be an impurity precipitation effect ihat was confirmed by X-ray diffraction analysis and electron probe microanalysis.

  9. Interplay between the magnetic and magneto-transport properties of 3D interconnected nanowire networks

    NASA Astrophysics Data System (ADS)

    da Câmara Santa Clara Gomes, Tristan; De La Torre Medina, Joaquín; Velázquez-Galván, Yenni G.; Martínez-Huerta, Juan Manuel; Encinas, Armando; Piraux, Luc

    2016-07-01

    We have explored the interplay between the magnetic and magneto-transport properties of 3D interconnected nanowire networks made of various magnetic metals by electrodeposition into nanoporous membranes with crossed channels and controlled topology. The close relationship between their magnetic and structural properties has a direct impact on their magneto-transport behavior. In order to accurately and reliably describe the effective magnetic anisotropy and anisotropic magnetoresistance, an analytical model inherent to the topology of 3D nanowire networks is proposed and validated. The feasibility to obtain magneto-transport responses in nanowire network films based on interconnected nanowires makes them very attractive for the development of mechanically stable superstructures that are suitable for potential technological applications.

  10. High throughput network for multiprocessor interconnections

    NASA Astrophysics Data System (ADS)

    Raatikainen, Pertti; Zidbeck, Juha

    1993-05-01

    Multiprocessor architectures are needed to support modern broadband applications, since traditional bus structures are not capable of providing high throughput. New bus structures are needed, especially in the area of network components and terminals. A study to find an efficient and cost effective interconnection topology for the future high speed products is presented. The most common bus topologies are introduced, and their characteristics are estimated to decide which one of them offers best performance and lowest implementation cost. The ring topology is chosen to be studied in more detail. Four competing bus access schemes for the high throughput ring are introduced as well as simulation models for each of them. Using transfer delay and throughput results, as well as keeping the implementation point of view in mind, the best candidate is selected to be studied and experimented in the succeeding research project.

  11. SIDES - Segment Interconnect Diagnostic Expert System

    SciTech Connect

    Booth, A.W.; Forster, R.; Gustafsson, L.; Ho, N.

    1989-02-01

    It is well known that the FASTBUS Segment Interconnect (SI) provides a communication path between two otherwise independent, asynchronous bus segments. The SI is probably the most important module in any FASTBUS data acquisition network since it's failure to function can cause whole segments of the network to be inaccessible and sometimes inoperable. This paper describes SIDES, an intelligent program designed to diagnose SI's both in situ as they operate in a data acquisition network, and in the laboratory in an acceptance/repair environment. The paper discusses important issues such as knowledge acquisition; extracting knowledge from human experts and other knowledge sources. SIDES can benefit high energy physics experiments, where SI problems can be diagnosed and solved more quickly. Equipment pool technicians can also benefit from SIDES, first by decreasing the number of SI's erroneously turned in for repair, and secondly as SIDES acts as an intelligent assistant to the technician in the diagnosis and repair process.

  12. Interconnection capacitance models for VLSI circuits

    NASA Astrophysics Data System (ADS)

    Wong, Shyh-Chyi; Liu, Patrick S.; Ru, Jien-Wen; Lin, Shi-Tron

    1998-06-01

    A new set of capacitance models is developed for delay estimation of VLSI interconnections. The set of models is derived for five representative wiring structures, with their combinations covering arbitrary VLSI layouts. A semi-empirical approach is adopted to deal with complicated geometry nature in VLSI and to allow for closed-form capacitance formulas to be developed to provide direct observation of capacitance variation vs process parameters as well as computational efficiency for circuit simulation. The formulas are given explicitly in terms of wire width, wire thickness, dielectric thickness and inter-wire spacing. The models show good agreement with numerical solutions from RAPHAEL and measurement data of fabricated capacitance test structures. The models are further applied and validated on a ring oscillator. It is shown that the frequency of the ring oscillator obtained from HSPICE simulation with our models agrees well with the bench measurement.

  13. Virtual interconnection platform initiative scoping study

    SciTech Connect

    Liu, Yong; Kou, Gefei; Pan, Zuohong; Liu, Yilu; King Jr., Thomas J.

    2016-01-01

    Due to security and liability concerns, the research community has limited access to realistic large-scale power grid models to test and validate new operation and control methodologies. It is also difficult for industry to evaluate the relative value of competing new tools without a common platform for comparison. This report proposes to develop a large-scale virtual power grid model that retains basic features and represents future trends of major U.S. electric interconnections. This model will include realistic power flow and dynamics information as well as a relevant geospatial distribution of assets. This model will be made widely available to the research community for various power system stability and control studies and can be used as a common platform for comparing the efficacies of various new technologies.

  14. Interconnecting conductively coated coverslides. [for ISEE-1

    NASA Technical Reports Server (NTRS)

    Gaddy, E. M.; Bass, J. A.

    1978-01-01

    The International Sun Earth Explorer-1 has the requirement that the entire outer surface of the spacecraft be conductive. A transparent coating of indium oxide was deposited for that reason on the satellite's solar cell coverglasses in order to give them a conductive surface, and the surfaces were interconnected to ground. This paper examines the interconnector attachment problem. On the ISEE-1, wires were bonded to the coverglasses by using a conductive epoxy; the resistance of these bonds increased dramatically with time. A program was initiated to find the functional cause of the resistance increase and to flight-qualify an alternative method of bonding. It was found the tests initiated were insufficient to find the cause of resistance increase and that an alternative solution of using indium solder is acceptable for bonding wires directly to indium oxide.

  15. Interconnecting compressors control coalbed gas production

    SciTech Connect

    Payton, R.; Niederhofer, J. )

    1992-10-05

    This paper reports that centralized compressors afford Taurus Exploration Inc.'s coalbed gas operations optimum control of gas production. Unlike satellite stations, the centralized system allows methane gas to e shifted from station to station via the interconnecting low-pressure pipeline network. The operations area encompasses approximately 40,000 acres, about 40 miles southwest of Birmingham, Ala. The project includes about 250-miles of low-pressure gas flow lines to almost 400 wells. The centralized system is less costly than a satellite station to build and operate. Unlike a satellite station that requires each compressor to have a complete set of ancillary equipment, the centralized system requires only one suction manifold, one dehydration setup, and one metering facility for every five compressor sets.

  16. Microfabricated structures with electrical isolation and interconnections

    NASA Technical Reports Server (NTRS)

    Clark, William A. (Inventor); Juneau, Thor N. (Inventor); Roessig, Allen W. (Inventor); Lemkin, Mark A. (Inventor)

    2001-01-01

    The invention is directed to a microfabricated device. The device includes a substrate that is etched to define mechanical structures at least some of which are anchored laterally to the remainder of the substrate. Electrical isolation at points where mechanical structures are attached to the substrate is provided by filled isolation trenches. Filled trenches may also be used to electrically isolate structure elements from each other at points where mechanical attachment of structure elements is desired. The performance of microelectromechanical devices is improved by 1) having a high-aspect-ratio between vertical and lateral dimensions of the mechanical elements, 2) integrating electronics on the same substrate as the mechanical elements, 3) good electrical isolation among mechanical elements and circuits except where electrical interconnection is desired.

  17. Multilevel converters for large electric drives

    SciTech Connect

    Tolbert, L.M.; Peng, F.Z.

    1997-11-01

    Traditional two-level high frequency pulse width modulation (PWM) inverters for motor drives have several problems associated with their high frequency switching which produces common-mode voltage and high voltage change (dV/dt) rates to the motor windings. Multilevel inverters solve these problems because their devices can switch at a much lower frequency. Two different multilevel topologies are identified for use as a converter for electric drives, a cascade inverter with separate dc sources and a back-to-back diode clamped converter. The cascade inverter is a natural fit for large automotive all electric drives because of the high VA ratings possible and because it uses several levels of dc voltage sources which would be available from batteries or fuel cells. The back to back diode damped converter is ideal where a source of ac voltage is available such as a hybrid electric vehicle. Simulation and experimental results show the superiority of these two converters over PWM based drives.

  18. Multilevel analysis in road safety research.

    PubMed

    Dupont, Emmanuelle; Papadimitriou, Eleonora; Martensen, Heike; Yannis, George

    2013-11-01

    Hierarchical structures in road safety data are receiving increasing attention in the literature and multilevel (ML) models are proposed for appropriately handling the resulting dependences among the observations. However, so far no empirical synthesis exists of the actual added value of ML modelling techniques as compared to other modelling approaches. This paper summarizes the statistical and conceptual background and motivations for multilevel analyses in road safety research. It then provides a review of several ML analyses applied to aggregate and disaggregate (accident) data. In each case, the relevance of ML modelling techniques is assessed by examining whether ML model formulations (i) allow improving the fit of the model to the data, (ii) allow identifying and explaining random variation at specific levels of the hierarchy considered, and (iii) yield different (more correct) conclusions than single-level model formulations with respect to the significance of the parameter estimates. The evidence reviewed offers different conclusions depending on whether the analysis concerns aggregate data or disaggregate data. In the first case, the application of ML analysis techniques appears straightforward and relevant. The studies based on disaggregate accident data, on the other hand, offer mixed findings: computational problems can be encountered, and ML applications are not systematically necessary. The general recommendation concerning disaggregate accident data is to proceed to a preliminary investigation of the necessity of ML analyses and of the additional information to be expected from their application. PMID:23769622

  19. The treatment for multilevel noncontiguous spinal fractures

    PubMed Central

    Lian, Xiao Feng; Hou, Tie Sheng; Yuan, Jian Dong; Jin, Gen Yang; Li, Zhong Hai

    2006-01-01

    We report the outcome of 30 patients with multilevel noncontiguous spinal fractures treated between 2000 and 2005. Ten cases were treated conservatively (group A), eight cases were operated on at only one level (group B), and 12 cases were treated surgically at both levels (group C). All cases were followed up for 14–60 months (mean 32 months). Initial mobilisation with a wheelchair or crutches in group A was 9.2±1.1 weeks, which was significantly longer than groups B and C with 6.8±0.7 weeks and 3.1±0.4 weeks, respectively. Operative time and blood loss in group C were significantly more than group B. The neurological deficit improved in six cases in group A (60%), six in group B (75%) and eight in group C (80%). Correction of kyphotic deformity was significantly superior in groups C and B at the operated level, and increasing deformity occurred in groups A and B at the non-operated level. From the results we believe that three treatment strategies were suitable for multilevel noncontiguous spinal fractures, and individualised treatment should be used in these patients. In the patients treated surgically, the clinical and radiographic outcomes are much better. PMID:17043863

  20. Electron Backscattered Diffraction Analysis Of Narrow Copper Interconnects In Cross-View To Investigate Scale Effect On Microstructure

    SciTech Connect

    Galand, Romain; Clement, Laurent; Waltz, Patrice; Wouters, Yves

    2010-11-24

    In this article, we propose to use Electron Backscattered Diffraction (EBSD) to characterize microstructure of copper interconnects of thin metal level in top view and cross view. These two views give very complementary information about microstructure of copper and thus about recrystallization of copper during annealing. Moreover, for minimum width, as interconnect is two times thicker than wide; It will be easier to analyze smaller interconnect of 45 nm node technology in cross-section. We look for evolution of texture and microstructure of copper with line width in top view and in cross view. We highlight the presence of two recrystallization mechanisms and also the fact that transition from one to the other is progressive with competition of both mechanisms.

  1. Electric currents in networks of interconnected memristors

    NASA Astrophysics Data System (ADS)

    Nedaaee Oskoee, Ehsan; Sahimi, Muhammad

    2011-03-01

    Chua [IEEE Trans. Circuit TheoryIECTAF0018-932410.1109/TCT.1971.1083337 1, 507 (1971).] argued that, in addition to the standard resistors, capacitors, and inductors, there must be a fourth fundamental element in electrical circuits, which he called a memory resistor or memristor. Strukov [Nature (London)NATUAS0028-083610.1038/nature06932 453, 80 (2008)] showed how memristive behavior arises in some thin semiconducting films. Unlike other passive elements, however, a memristor with large sizes cannot be fabricated, because scale up of a memristor to dimensions of the order of microns causes loss of the memristive effect by decreasing the width of the doped region relative to the overall size of the memristor. A microscale memristor is, however, essential to most of the potential applications. One way of fabricating such a microscale memristor without losing the memristive effect is to make a network of very small interconnected memristors. We report the results of numerical simulations of electrical currents in such networks of interconnected memristors, as well as memristors and Ohmic conductors. The memristor networks exhibit a rich variety of interesting properties, including weakly and strongly memristive regimes, a possible first-order transition at the connectivity threshold, generation of second harmonics in the strongly memristive regime, and the universal dependence of the network’s strength on the frequency. Moreover, we show that the polarity of the memristors can play an important role in the overall properties of the memristor network, in particular its speed of switching, which may have a potentially important application to faster computers. None of these properties are exhibited by linear resistor networks, or even by nonlinear resistor networks without a memory effect.

  2. Electric currents in networks of interconnected memristors.

    PubMed

    Nedaaee Oskoee, Ehsan; Sahimi, Muhammad

    2011-03-01

    Chua [IEEE Trans. Circuit Theory 1, 507 (1971).] argued that, in addition to the standard resistors, capacitors, and inductors, there must be a fourth fundamental element in electrical circuits, which he called a memory resistor or memristor. Strukov et al. [Nature (London) 453, 80 (2008)] showed how memristive behavior arises in some thin semiconducting films. Unlike other passive elements, however, a memristor with large sizes cannot be fabricated, because scale up of a memristor to dimensions of the order of microns causes loss of the memristive effect by decreasing the width of the doped region relative to the overall size of the memristor. A microscale memristor is, however, essential to most of the potential applications. One way of fabricating such a microscale memristor without losing the memristive effect is to make a network of very small interconnected memristors. We report the results of numerical simulations of electrical currents in such networks of interconnected memristors, as well as memristors and Ohmic conductors. The memristor networks exhibit a rich variety of interesting properties, including weakly and strongly memristive regimes, a possible first-order transition at the connectivity threshold, generation of second harmonics in the strongly memristive regime, and the universal dependence of the network's strength on the frequency. Moreover, we show that the polarity of the memristors can play an important role in the overall properties of the memristor network, in particular its speed of switching, which may have a potentially important application to faster computers. None of these properties are exhibited by linear resistor networks, or even by nonlinear resistor networks without a memory effect. PMID:21517452

  3. 3-D perpendicular assembly of SWNTs for CMOS interconnects

    NASA Astrophysics Data System (ADS)

    Kim, Tae-Hoon; Yilmaz, Cihan; Somu, Sivasubramanian; Busnaina, Ahmed

    2013-11-01

    Due to their superior electrical properties such as high current density and ballistic transport, carbon nanotubes (CNT) are considered as a potential candidate for future very large scale integration (VLSI) interconnects. However, direct incorporation of CNTs into a complimentary metal oxide semiconductor (CMOS) architecture by the conventional chemical vapor deposition (CVD) growth method is problematic because it requires high temperatures that might damage insulators and doped semiconductors in the underlying CMOS circuits. In this paper, we present a directed assembly method to assemble aligned CNTs into pre-patterned vias perpendicular to the substrate. A dynamic electric field with a static offset is applied to provide the force needed for directing the SWNT assembly. It is also shown that by adjusting assembly parameters the density of the assembled CNTs can be significantly enhanced. This highly scalable directed assembly method is conducted at room temperature and pressure and is accomplished in a few minutes. I-V characterization of the assembled CNTs was conducted using a Zyvex nanomanipulator in a scanning electron microscope (SEM) and the measured value of the resistance was 270 kΩs.

  4. ENVIRONMENTAL-HUMAN HEALTH INTERCONNECTIONS: A WORKSHOP REPORT

    EPA Science Inventory

    A Pellston Workshop jointly sponsored by SETAC and SOT to discuss this topic of "Interconnections" was held in June, 2000 in Snowbird, Utah. This workshop was motivated by a deep concern shared by many human health, environmental, and social scientists for the interconnections, ...

  5. Massive parallel optical systems with nearest-neighbor interconnections

    NASA Astrophysics Data System (ADS)

    Giglmayr, Josef

    1995-08-01

    Two basic architectures are deduced from 1D multistage architectures with nearest-neighbor (NN) interconnection of switches and extended into 2D architectures by a mathematical transformation. These two architectures are the Spanke-Benes (SB) network and the NN multistage interconnection network of switches (NN-MIN). The properties and applications of the two 2D architectures are described.

  6. Updating Small Generator Interconnection Procedures for New Market Conditions

    SciTech Connect

    Coddington, M.; Fox, K.; Stanfield, S.; Varnado, L.; Culley, T.; Sheehan, M.

    2012-12-01

    Federal and state regulators are faced with the challenge of keeping interconnection procedures updated against a backdrop of evolving technology, new codes and standards, and considerably transformed market conditions. This report is intended to educate policymakers and stakeholders on beneficial reforms that will keep interconnection processes efficient and cost-effective while maintaining a safe and reliable power system.

  7. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... sides of the plane of symmetry must be synchronized by a mechanical interconnection or approved... engines on one side of the plane of symmetry inoperative and the remaining engines at takeoff power. (c... resulting when interconnected flap or slat surfaces on one side of the plane of symmetry are jammed...

  8. Determining the Utility Value of Water-Supply Interconnections.

    ERIC Educational Resources Information Center

    Hardman, James L.; Cheremisinoff, Paul N.

    1979-01-01

    This article is the third in a series which discusses a mathematical methodology for evaluating interconnections of water supply systems. The model can be used to analyze the carrying capacity of proposed links or predict the impact of abandoning interconnections. (AS)

  9. Computer Network Interconnection: Problems and Prospects. Computer Science & Technology Series.

    ERIC Educational Resources Information Center

    Cotton, Ira W.

    This report examines the current situation regarding the interconnection of computer networks, especially packet switched networks (PSNs). The emphasis is on idntifying the barriers to interconnection and on surveying approaches to a solution, rather than recommending any single course of action. Sufficient organizational and technical background…

  10. Direct handling of equality constraints in multilevel optimization

    NASA Technical Reports Server (NTRS)

    Renaud, John E.; Gabriele, Gary A.

    1990-01-01

    In recent years there have been several hierarchic multilevel optimization algorithms proposed and implemented in design studies. Equality constraints are often imposed between levels in these multilevel optimizations to maintain system and subsystem variable continuity. Equality constraints of this nature will be referred to as coupling equality constraints. In many implementation studies these coupling equality constraints have been handled indirectly. This indirect handling has been accomplished using the coupling equality constraints' explicit functional relations to eliminate design variables (generally at the subsystem level), with the resulting optimization taking place in a reduced design space. In one multilevel optimization study where the coupling equality constraints were handled directly, the researchers encountered numerical difficulties which prevented their multilevel optimization from reaching the same minimum found in conventional single level solutions. The researchers did not explain the exact nature of the numerical difficulties other than to associate them with the direct handling of the coupling equality constraints. The coupling equality constraints are handled directly, by employing the Generalized Reduced Gradient (GRG) method as the optimizer within a multilevel linear decomposition scheme based on the Sobieski hierarchic algorithm. Two engineering design examples are solved using this approach. The results show that the direct handling of coupling equality constraints in a multilevel optimization does not introduce any problems when the GRG method is employed as the internal optimizer. The optimums achieved are comparable to those achieved in single level solutions and in multilevel studies where the equality constraints have been handled indirectly.

  11. Modelling of asymmetrical interconnect T-tree laminated on flexible substrate

    NASA Astrophysics Data System (ADS)

    Ravelo, Blaise

    2015-11-01

    A fast and accurate behavioral modelling of asymmetrical microstrip tree printed on plastic substrate is investigated. The methodology for extracting the asymmetrical tree transfer responses based on the ABCD-matrix analysis is presented. The elements of the interconnect T-tree are constituted by transmission lines (TLs) defined by their characteristic impedance and physical length. The distributed tree network can be assumed as a single input multiple output (SIMO) topology. By considering the circuit equivalent between the electrical path from the tree input and output, the single input single output (SISO) simplified circuit can be established. In order to determine the frequency response of the interconnect tree system, the elementary TLs constituting the tree branches are modelled with their equivalent frequency dependent RLCG network. The novelty of the present paper is the application of the model to the microstrip structure printed on the plastic substrate by analyzing the influence of the metallization conductivity. As proof of concept (POC), a single input and three output distributed interconnect T-tree having branches presented physical lengths from 3 cm to 20 cm was designed. The POC was printed on the Cu metal deposited plastic Kapton substrate. Then, the frequency dependent per unit length resistance, inductance, capacitance and conductance of the elementary branches of the T-tree from DC to 10 GHz were extracted. By implementing the behavioral model of the circuit, the frequency- and time-domain responses of the proposed asymmetrical T-tree are computed. Then, the analyses of the asymmetrical T-tree responses in function of the thin film conductivity of the microstrip interconnect lines were discussed. In addition, time domain analysis enabling to predict the influence of the deposited metallic ink conductivity on the signal integrity is realized by considering a mixed signal corresponding to the digital data "010110000" having 0.5 Gbps rate

  12. Solar-cell interconnect design for terrestrial photovoltaic modules

    NASA Technical Reports Server (NTRS)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1984-01-01

    Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

  13. Solid-state energy storage module employing integrated interconnect board

    DOEpatents

    Rouillard, Jean; Comte, Christophe; Daigle, Dominik; Hagen, Ronald A.; Knudson, Orlin B.; Morin, Andre; Ranger, Michel; Ross, Guy; Rouillard, Roger; St-Germain, Philippe; Sudano, Anthony; Turgeon, Thomas A.

    2004-09-28

    An electrochemical energy storage device includes a number of solid-state thin-film electrochemical cells which are selectively interconnected in series or parallel through use of an integrated interconnect board. The interconnect board is typically disposed within a sealed housing which also houses the electrochemical cells, and includes a first contact and a second contact respectively coupled to first and second power terminals of the energy storage device. The interconnect board advantageously provides for selective series or parallel connectivity with the electrochemical cells, irrespective of electrochemical cell position within the housing. Fuses and various electrical and electro-mechanical devices, such as bypass, equalization, and communication devices for example, may also be mounted to the interconnect board and selectively connected to the electrochemical cells.

  14. Solid-state energy storage module employing integrated interconnect board

    DOEpatents

    Rouillard, Jean; Comte, Christophe; Daigle, Dominik; Hagen, Ronald A.; Knudson, Orlin B.; Morin, Andre; Ranger, Michel; Ross, Guy; Rouillard, Roger; St-Germain, Philippe; Sudano, Anthony; Turgeon, Thomas A.

    2003-11-04

    The present invention is directed to an improved electrochemical energy storage device. The electrochemical energy storage device includes a number of solid-state, thin-film electrochemical cells which are selectively interconnected in series or parallel through use of an integrated interconnect board. The interconnect board is typically disposed within a sealed housing which also houses the electrochemical cells, and includes a first contact and a second contact respectively coupled to first and second power terminals of the energy storage device. The interconnect board advantageously provides for selective series or parallel connectivity with the electrochemical cells, irrespective of electrochemical cell position within the housing. Fuses and various electrical and electromechanical devices, such as bypass, equalization, and communication devices for example, may also be mounted to the interconnect board and selectively connected to the electrochemical cells.

  15. Solar-cell interconnect design for terrestrial photovoltaic modules

    NASA Astrophysics Data System (ADS)

    Mon, G. R.; Moore, D. M.; Ross, R. G., Jr.

    1984-11-01

    Useful solar cell interconnect reliability design and life prediction algorithms are presented, together with experimental data indicating that the classical strain cycle (fatigue) curve for the interconnect material does not account for the statistical scatter that is required in reliability predictions. This shortcoming is presently addressed by fitting a functional form to experimental cumulative interconnect failure rate data, which thereby yields statistical fatigue curves enabling not only the prediction of cumulative interconnect failures during the design life of an array field, but also the quantitative interpretation of data from accelerated thermal cycling tests. Optimal interconnect cost reliability design algorithms are also derived which may allow the minimization of energy cost over the design life of the array field.

  16. , Analysis of U.S. Net Metering and Interconnection Policy

    SciTech Connect

    Haynes, Rusty; Cook, Chris

    2006-07-01

    Historically, the absence of interconnection standards has been one of the primary barriers to the deployment of distributed generation (DG) in the United States. Although significant progress in the development of interconnection standards was achieved at both the federal and state levels in 2005, interconnection policy and net-metering policy continue to confound regulators, lawmakers, DG businesses, clean-energy advocates and consumers. For this reason it is critical to keep track of developments related to these issues. The North Carolina Solar Center (NCSC) is home to two Interstate Renewable Energy Council (IREC) projects -- the National Interconnection Project and the Database of State Incentives for Renewable Energy (DSIRE). This paper will present the major federal and state level policy developments in interconnection and net metering in 2005 and early 2006. It will also present conclusions based an analysis of data collected by these two projects.

  17. Fuel cell electrode interconnect contact material encapsulation and method

    DOEpatents

    Derose, Anthony J.; Haltiner, Jr., Karl J.; Gudyka, Russell A.; Bonadies, Joseph V.; Silvis, Thomas W.

    2016-05-31

    A fuel cell stack includes a plurality of fuel cell cassettes each including a fuel cell with an anode and a cathode. Each fuel cell cassette also includes an electrode interconnect adjacent to the anode or the cathode for providing electrical communication between an adjacent fuel cell cassette and the anode or the cathode. The interconnect includes a plurality of electrode interconnect protrusions defining a flow passage along the anode or the cathode for communicating oxidant or fuel to the anode or the cathode. An electrically conductive material is disposed between at least one of the electrode interconnect protrusions and the anode or the cathode in order to provide a stable electrical contact between the electrode interconnect and the anode or cathode. An encapsulating arrangement segregates the electrically conductive material from the flow passage thereby, preventing volatilization of the electrically conductive material in use of the fuel cell stack.

  18. Ultra-low energy photoreceivers for optical interconnects

    NASA Astrophysics Data System (ADS)

    Going, Ryan Wayne

    Optical interconnects are increasingly important for our communication and data center systems, and are forecasted to be an essential component of future computers. In order to meet these future demands, optical interconnects must be improved to consume less power than they do today. To do this, both more efficient transmitters and more sensitive receivers must be developed. This work addresses the latter, focusing on device level improvements to tightly couple a low capacitance photodiode with the first stage transistor of the receiver as a single phototransistor device. First I motivate the need for a coupled phototransistor using a simple circuit model which shows how receiver sensitivity is determined by photodiode capacitance and the length of wire connecting it to the first transistor in a receiver amplifier. Then I describe our use of the unique rapid melt growth technique, which is used to integrate crystalline germanium on silicon photonics substrates without an epitaxial reactor. The resulting material quality is demonstrated with high quality (0.95 A/W, 40+ GHz) germanium photodiodes on silicon waveguides. Next I describe two germanium phototransistors I have developed. One is a germanium- gated MOSFET on silicon photonics which has up to 18 A/W gate-controlled responsivity at 1550 nm. Simulations show how MOSFET scaling rules can be easily applied to increase both speed and sensitivity. The second is a floating base germanium bipolar phototransistor on silicon photonics with a 15 GHz gain x bandwidth product. The photoBJT also has a clear scaling path, and it is proposed to create a separate gain and absorption region photoBJT to realize the maximum benefit of scaling the BJT without negatively affecting its absorption and photocarrier collection. Following this design a 120 GHz gain x bandwidth photoBJT is simulated. Finally I present a metal-cavity, which can have over 50% quantum efficiency absorption in sub-100 aF germanium photodiodes, which

  19. Towards the development of multilevel-multiagent diagnostic aids

    SciTech Connect

    Stratton, R.C.; Jarrell, D.B.

    1991-10-01

    Presented here is our methodology for developing automated aids for diagnosing faults in complex systems. We have designed these aids as multilevel-multiagent diagnostic aids based on principles that should be generally applicable to any complex system. In this methodology, multilevel'' refers to information models described at successful levels of abstraction that are tied together in such a way that reasoning is directed to the appropriate level as determined by the problem solving requirements. The concept of multiagent'' refers to the method of information processing within the multilevel model network; each model in the network is an independent information processor, i.e., an intelligent agent. 19 refs., 15 figs., 9 tabs.

  20. Energy and water in the Western and Texas interconnects.

    SciTech Connect

    Tidwell, Vincent Carroll

    2010-08-01

    The Department of Energy's Office of Electricity has initiated a $60M program to assist the electric industry in interconnection-level analysis and planning. The objective of this effort is to facilitate the development or strengthening of capabilities in each of the three interconnections serving the lower 48 states of the United States, to prepare analyses of transmission requirements under a broad range of alternative futures and develop long-term interconnection-wide transmission expansion plans. The interconnections are the Western Interconnection, the Eastern Interconnection, and the Texas Interconnection. One element of this program address the support and development of an integrated energy-water Decision Support System (DSS) that will enable planners in the Western and Texas Interconnections to analyze the potential implications of water stress for transmission and resource planning (the Eastern Interconnection is not participating in this element). Specific objectives include: (1) Develop an integrated Energy-Water Decision Support System (DSS) that will enable planners in the Western and Texas Interconnections to analyze the potential implications of water stress for transmission and resource planning. (2) Pursue the formulation and development of the Energy-Water DSS through a strongly collaborative process between members of this proposal team and the Western Electricity Coordinating Council (WECC), Western Governors Association (WGA), the Electric Reliability Council of Texas (ERCOT) and their associated stakeholder teams. (3) Exercise the Energy-Water DSS to investigate water stress implications of the transmission planning scenarios put forward by WECC, WGA, and ERCOT. The goals of this project are: (1) Develop an integrated Energy-Water Decision Support System (DSS) that will enable planners to analyze the potential implications of water stress for transmission and resource planning. (2) Pursue the formulation and development of the Energy

  1. Mapping of interconnection of climate risks

    NASA Astrophysics Data System (ADS)

    Yokohata, Tokuta; Tanaka, Katsumasa; Nishina, Kazuya; Takanashi, Kiyoshi; Emori, Seita; Kiguchi, Masashi; Iseri, Yoshihiko; Honda, Yasushi; Okada, Masashi; Masaki, Yoshimitsu; Yamamoto, Akitomo; Shigemitsu, Masahito; Yoshimori, Masakazu; Sueyoshi, Tetsuo; Iwase, Kenta; Hanasaki, Naota; Ito, Akihiko; Sakurai, Gen; Iizumi, Toshichika; Oki, Taikan

    2015-04-01

    Anthropogenic climate change possibly causes various impacts on human society and ecosystem. Here, we call possible damages or benefits caused by the future climate change as "climate risks". Many climate risks are closely interconnected with each other by direct cause-effect relationship. In this study, the major climate risks are comprehensively summarized based on the survey of studies in the literature using IPCC AR5 etc, and their cause-effect relationship are visualized by a "network diagram". This research is conducted by the collaboration between the experts of various fields, such as water, energy, agriculture, health, society, and eco-system under the project called ICA-RUS (Integrated Climate Assessment - Risks, Uncertainties and Society). First, the climate risks are classified into 9 categories (water, energy, food, health, disaster, industry, society, ecosystem, and tipping elements). Second, researchers of these fields in our project survey the research articles, and pick up items of climate risks, and possible cause-effect relationship between the risk items. A long list of the climate risks is summarized into ~130, and that of possible cause-effect relationship between the risk items is summarized into ~300, because the network diagram would be illegible if the number of the risk items and cause-effect relationship is too large. Here, we only consider the risks that could occur if climate mitigation policies are not conducted. Finally, the chain of climate risks is visualized by creating a "network diagram" based on a network graph theory (Fruchtman & Reingold algorithm). Through the analysis of network diagram, we find that climate risks at various sectors are closely related. For example, the decrease in the precipitation under the global climate change possibly causes the decrease in river runoff and the decrease in soil moisture, which causes the changes in crop production. The changes in crop production can have an impact on society by

  2. Multilevel domain decomposition for electronic structure calculations

    SciTech Connect

    Barrault, M. . E-mail: maxime.barrault@edf.fr; Cances, E. . E-mail: cances@cermics.enpc.fr; Hager, W.W. . E-mail: hager@math.ufl.edu; Le Bris, C. . E-mail: lebris@cermics.enpc.fr

    2007-03-01

    We introduce a new multilevel domain decomposition method (MDD) for electronic structure calculations within semi-empirical and density functional theory (DFT) frameworks. This method iterates between local fine solvers and global coarse solvers, in the spirit of domain decomposition methods. Using this approach, calculations have been successfully performed on several linear polymer chains containing up to 40,000 atoms and 200,000 atomic orbitals. Both the computational cost and the memory requirement scale linearly with the number of atoms. Additional speed-up can easily be obtained by parallelization. We show that this domain decomposition method outperforms the density matrix minimization (DMM) method for poor initial guesses. Our method provides an efficient preconditioner for DMM and other linear scaling methods, variational in nature, such as the orbital minimization (OM) procedure.

  3. Structural optimization by generalized, multilevel decomposition

    NASA Technical Reports Server (NTRS)

    Sobieszczanski-Sobieski, J.; James, B. B.; Riley, M. F.

    1985-01-01

    The developments toward a general multilevel optimization capability and results for a three-level structural optimization are described. The method partitions a structure into a number of substructuring levels where each substructure corresponds to a subsystem in the general case of an engineering system. The method is illustrated by a portal framework that decomposes into individual beams. Each beam is a box that can be further decomposed into stiffened plates. Substructuring for this example spans three different levels: (1) the bottom level of finite elements representing the plates; (2) an intermediate level of beams treated as substructures; and (3) the top level for the assembled structure. The three-level case is now considered to be qualitatively complete.

  4. Evolution of cooperation by multilevel selection.

    PubMed

    Traulsen, Arne; Nowak, Martin A

    2006-07-18

    We propose a minimalist stochastic model of multilevel (or group) selection. A population is subdivided into groups. Individuals interact with other members of the group in an evolutionary game that determines their fitness. Individuals reproduce, and offspring are added to the same group. If a group reaches a certain size, it can split into two. Faster reproducing individuals lead to larger groups that split more often. In our model, higher-level selection emerges as a byproduct of individual reproduction and population structure. We derive a fundamental condition for the evolution of cooperation by group selection: if b/c > 1 + n/m, then group selection favors cooperation. The parameters b and c denote the benefit and cost of the altruistic act, whereas n and m denote the maximum group size and the number of groups. The model can be extended to more than two levels of selection and to include migration. PMID:16829575

  5. Discrete fluorescent saturation regimes in multilevel systems

    NASA Technical Reports Server (NTRS)

    Kastner, S. O.; Bhatia, A. K.

    1988-01-01

    Using models of multilevel atoms, the fluorescent process was examined for the ratio of the photooxidation rate, Pij, to the collisional oxidation rate, Cij, in the pumped resonance transition i-j. It is shown that, in the full range of the parameter Pij/Cij, there exist three distinct regimes (I, II, and III) which may be usefully exploited. These regimes are defined, respectively, by the following conditions: Pij/Cij smaller than about 1; Pij/Cij much greater than 1 and Pij much lower than Cki; and Pij/Cij much greater than 1 and Pij much higher than Cki, where Cki is the collisional rate populating the source level i. The only regime which is characterized by the sensitivity of fluorescent-fluorescent line intensity ratios to Pij is regime I. If regime III is reached, even fluorescent-nonfluorescent line ratios become independent of Pij. The analysis is applied to the resonant photoexcitation of a carbonlike ion.

  6. ADAPTIVE MULTILEVEL SPLITTING IN MOLECULAR DYNAMICS SIMULATIONS*

    PubMed Central

    Aristoff, David; Lelièvre, Tony; Mayne, Christopher G.; Teo, Ivan

    2014-01-01

    Adaptive Multilevel Splitting (AMS) is a replica-based rare event sampling method that has been used successfully in high-dimensional stochastic simulations to identify trajectories across a high potential barrier separating one metastable state from another, and to estimate the probability of observing such a trajectory. An attractive feature of AMS is that, in the limit of a large number of replicas, it remains valid regardless of the choice of reaction coordinate used to characterize the trajectories. Previous studies have shown AMS to be accurate in Monte Carlo simulations. In this study, we extend the application of AMS to molecular dynamics simulations and demonstrate its effectiveness using a simple test system. Our conclusion paves the way for useful applications, such as molecular dynamics calculations of the characteristic time of drug dissociation from a protein target. PMID:26005670

  7. Multi-level coupled cluster theory

    SciTech Connect

    Myhre, Rolf H.; Koch, Henrik; Sánchez de Merás, Alfredo M. J.

    2014-12-14

    We present a general formalism where different levels of coupled cluster theory can be applied to different parts of the molecular system. The system is partitioned into subsystems by Cholesky decomposition of the one-electron Hartree-Fock density matrix. In this way the system can be divided across chemical bonds without discontinuities arising. The coupled cluster wave function is defined in terms of cluster operators for each part and these are determined from a set of coupled equations. The total wave function fulfills the Pauli-principle across all borders and levels of electron correlation. We develop the associated response theory for this multi-level coupled cluster theory and present proof of principle applications. The formalism is an essential tool in order to obtain size-intensive complexity in the calculation of local molecular properties.

  8. Earning potential in multilevel marketing enterprises

    NASA Astrophysics Data System (ADS)

    Legara, Erika Fille; Monterola, Christopher; Juanico, Dranreb Earl; Litong-Palima, Marisciel; Saloma, Caesar

    2008-08-01

    Government regulators and other concerned citizens warily view multilevel marketing enterprises (MLM) because of their close operational resemblance to exploitative pyramid schemes. We analyze two types of MLM network architectures - the unilevel and binary, in terms of growth behavior and earning potential among members. We show that network growth decelerates after reaching a size threshold, contrary to claims of unrestricted growth by MLM recruiters. We have also found that the earning potential in binary MLM’s obey the Pareto “80-20” rule, implying an earning opportunity that is strongly biased against the most recent members. On the other hand, unilevel MLM’s do not exhibit the Pareto earning distribution and earning potential is independent of member position in the network. Our analytical results agree well with field data taken from real-world MLM’s in the Philippines. Our analysis is generally valid and can be applied to other MLM architectures.

  9. Method of producing microporous joints in metal bodies

    DOEpatents

    Danko, Joseph C.

    1982-01-01

    Tungsten is placed in contact with either molybdenum, tantalum, niobium, vanadium, rhenium, or other metal of atoms having a different diffusion coefficient than tungsten. The metals are heated so that the atoms having the higher diffusion coefficient migrate to the metal having the lower diffusion rate, leaving voids in the higher diffusion coefficient metal. Heating is continued until the voids are interconnected.

  10. Adaptive optical interconnects: the ADDAPT project

    NASA Astrophysics Data System (ADS)

    Henker, Ronny; Pliva, Jan; Khafaji, Mahdi; Ellinger, Frank; Toifl, Thomas; Offrein, Bert; Cevrero, Alessandro; Oezkaya, Ilter; Seifried, Marc; Ledentsov, Nikolay; Kropp, Joerg-R.; Shchukin, Vitaly; Zoldak, Martin; Halmo, Leos; Turkiewicz, Jaroslaw; Meredith, Wyn; Eddie, Iain; Georgiades, Michael; Charalambides, Savvas; Duis, Jeroen; van Leeuwen, Pieter

    2015-09-01

    Existing optical networks are driven by dynamic user and application demands but operate statically at their maximum performance. Thus, optical links do not offer much adaptability and are not very energy-efficient. In this paper a novel approach of implementing performance and power adaptivity from system down to optical device, electrical circuit and transistor level is proposed. Depending on the actual data load, the number of activated link paths and individual device parameters like bandwidth, clock rate, modulation format and gain are adapted to enable lowering the components supply power. This enables flexible energy-efficient optical transmission links which pave the way for massive reductions of CO2 emission and operating costs in data center and high performance computing applications. Within the FP7 research project Adaptive Data and Power Aware Transceivers for Optical Communications (ADDAPT) dynamic high-speed energy-efficient transceiver subsystems are developed for short-range optical interconnects taking up new adaptive technologies and methods. The research of eight partners from industry, research and education spanning seven European countries includes the investigation of several adaptive control types and algorithms, the development of a full transceiver system, the design and fabrication of optical components and integrated circuits as well as the development of high-speed, low loss packaging solutions. This paper describes and discusses the idea of ADDAPT and provides an overview about the latest research results in this field.

  11. PCB with fully integrated optical interconnects

    NASA Astrophysics Data System (ADS)

    Langer, Gregor; Satzinger, Valentin; Schmidt, Volker; Schmid, Gerhard; Leeb, Walter R.

    2011-01-01

    The increasing demand for miniaturization and design flexibility of polymer optical waveguides integrated into electrical printed circuit boards (PCB) calls for new coupling and integration concepts. We report on a method that allows the coupling of optical waveguides to electro-optical components as well as the integration of an entire optical link into the PCB. The electro-optical devices such as lasers and photodiodes are assembled on the PCB and then embedded in an optically transparent material. A focused femtosecond laser beam stimulates a polymerization reaction based on a two-photon absorption effect in the optical material and locally increases the refractive index of the material. In this way waveguide cores can be realized and the embedded components can be connected optically. This approach does not only allow a precise alignment of the waveguide end faces to the components but also offers a truly 3-dimensional routing capability of the waveguides. Using this technology we were able to realize butt-coupling and mirror-coupling interface solutions in several demonstrators. We were also manufacturing demonstrator boards with fully integrated driver and preamplifier chips, which show very low power consumption of down to 10 mW for about 2.5 Gbit/s. Furthermore, demonstrators with interconnects at two different optical layers were realized.

  12. Maximizing algebraic connectivity in interconnected networks

    NASA Astrophysics Data System (ADS)

    Shakeri, Heman; Albin, Nathan; Darabi Sahneh, Faryad; Poggi-Corradini, Pietro; Scoglio, Caterina

    2016-03-01

    Algebraic connectivity, the second eigenvalue of the Laplacian matrix, is a measure of node and link connectivity on networks. When studying interconnected networks it is useful to consider a multiplex model, where the component networks operate together with interlayer links among them. In order to have a well-connected multilayer structure, it is necessary to optimally design these interlayer links considering realistic constraints. In this work, we solve the problem of finding an optimal weight distribution for one-to-one interlayer links under budget constraint. We show that for the special multiplex configurations with identical layers, the uniform weight distribution is always optimal. On the other hand, when the two layers are arbitrary, increasing the budget reveals the existence of two different regimes. Up to a certain threshold budget, the second eigenvalue of the supra-Laplacian is simple, the optimal weight distribution is uniform, and the Fiedler vector is constant on each layer. Increasing the budget past the threshold, the optimal weight distribution can be nonuniform. The interesting consequence of this result is that there is no need to solve the optimization problem when the available budget is less than the threshold, which can be easily found analytically.

  13. Ceramic Interconnects with Low Sintering Temperature

    NASA Technical Reports Server (NTRS)

    Zhong, Zhi-Min; Goldsby, Jon C.

    2004-01-01

    Ceramic interconnects for use in solid oxide he1 cells are expected to operate between 900 to approximately 1000 C, sinter below 1400 C to allow co-firing and meet a number thermal mechanical requirements. The pervoskite type (ABO3) lanthanum chromite based materials have emerged as a leading candidate that will meet these criteria by varying the composition on the A and B sites. A need therefore exists to determine this material's temperature dependent electrical and mechanical properties with respect to these site substitutions. In this investigation oxide powders were prepared by the glycine-nitrate process. Ionic substitutions were carried out on A sites with Ca or Sr, and B sites with Co and Al, respectively. Only stoichiometric compositions were considered for the sake of stability. The powders and their ability to sinter were investigated by XRD, SEM, dilatometry and density measurements. The sintered materials were further examined by SEM, thermal expansion and electric conductivity measurements in order to elucidate the resulting microstructure, electrical and mechanical properties. In addition quantum mechanical calculations were performed to obtain insight into the effects of these dopants on the materials electronic band structure and lattice parameter.

  14. Interconnected Cavernous Structure of Bacterial Fruiting Bodies

    PubMed Central

    Harvey, Cameron W.; Du, Huijing; Xu, Zhiliang; Kaiser, Dale; Aranson, Igor; Alber, Mark

    2012-01-01

    The formation of spore-filled fruiting bodies by myxobacteria is a fascinating case of multicellular self-organization by bacteria. The organization of Myxococcus xanthus into fruiting bodies has long been studied not only as an important example of collective motion of bacteria, but also as a simplified model for developmental morphogenesis. Sporulation within the nascent fruiting body requires signaling between moving cells in order that the rod-shaped self-propelled cells differentiate into spores at the appropriate time. Probing the three-dimensional structure of myxobacteria fruiting bodies has previously presented a challenge due to limitations of different imaging methods. A new technique using Infrared Optical Coherence Tomography (OCT) revealed previously unknown details of the internal structure of M. xanthus fruiting bodies consisting of interconnected pockets of relative high and low spore density regions. To make sense of the experimentally observed structure, modeling and computer simulations were used to test a hypothesized mechanism that could produce high-density pockets of spores. The mechanism consists of self-propelled cells aligning with each other and signaling by end-to-end contact to coordinate the process of differentiation resulting in a pattern of clusters observed in the experiment. The integration of novel OCT experimental techniques with computational simulations can provide new insight into the mechanisms that can give rise to the pattern formation seen in other biological systems such as dictyostelids, social amoeba known to form multicellular aggregates observed as slugs under starvation conditions. PMID:23300427

  15. Backplane photonic interconnect modules with optical jumpers

    NASA Astrophysics Data System (ADS)

    Glebov, Alexei L.; Lee, Michael G.; Yokouchi, Kishio

    2005-03-01

    Prototypes of optical interconnect (OI) modules for backplane applications are presented. The transceivers attached to the linecards E/O convert the signals that are passed to and from the backplane by optical jumpers terminated with MTP-type connectors. The connectors plug into adaptors attached to the backplane and the microlens arrays mounted in the adaptors couple the light between the fibers and waveguides. Planar polymer channel waveguides with 30-50 μm cross-sections route the optical signals across the board with propagation losses as low as 0.05 dB/cm @ 850 nm. The 45¦-tapered integrated micromirrors reflect the light in and out of the waveguide plane with the loss of 0.8 dB per mirror. The connector displacement measurements indicate that the adaptor lateral assembly accuracy can be at least +/-10 μm for the excess loss not exceeding 1 dB. Insertion losses of the test modules with integrated waveguides, 45¦ mirrors, and pluggable optical jumper connectors are about 5 dB. Eye diagrams at 10.7 Gb/s have typical width and height of 70 ps and 400 mV, respectively, and jitter of about 20 ps.

  16. Manipulator interactive design with interconnected flexible elements

    NASA Technical Reports Server (NTRS)

    Singh, R. P.; Likins, P. W.

    1983-01-01

    This paper describes the development of an analysis tool for the interactive design of control systems for manipulators and similar electro-mechanical systems amenable to representation as structures in a topological chain. The chain consists of a series of elastic bodies subject to small deformations and arbitrary displacements. The bodies are connected by hinges which permit kinematic constraints, control, or relative motion with six degrees of freedom. The equations of motion for the chain configuration are derived via Kane's method, extended for application to interconnected flexible bodies with time-varying boundary conditions. A corresponding set of modal coordinates has been selected. The motion equations are imbedded within a simulation that transforms the vector-dyadic equations into scalar form for numerical integration. The simulation also includes a linear, time-invariant controler specified in transfer function format and a set of sensors and actuators that interface between the structure and controller. The simulation is driven by an interactive set-up program resulting in an easy-to-use analysis tool.

  17. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  18. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  19. Multichip module with planar-integrated free-space optical vector-matrix-type interconnects

    NASA Astrophysics Data System (ADS)

    Gruber, Matthias

    2004-01-01

    Even in the semiconductor industry, free-space optical technology is nowadays seen as a prime option for solving the continually aggravating problem with VLSI chips, namely, that the interconnect technology has failed to keep pace with the increase in communication volume. To make free-space optics compatible with established lithography-based design and fabrication techniques the concept of planar integration was proposed approximately a decade ago. Here its evolution into a photonic microsystems engineering concept is described. For demonstration, a multichip module with planar-integrated free-space optical vector-matrix-type interconnects was designed and built. It contains flip-chip-bonded vertical-cavity surface emitting laser arrays and a hybrid chip with an array of multiple-quantum-well p-i-n diodes on top of a standard complementary metal-oxide semiconductor circuit as key optoelectronic hardware components. The optical system is integrated into a handy fused-silica substrate and fabricated with surface-relief diffractive phase elements. It has been optimized for the given geometrical and technological constraints and provides a good interconnection performance, as was verified in computer simulations on the basis of ray tracing and in practical experiments.

  20. CO2 laser micromachining of optical waveguides for interconnection on circuit boards

    NASA Astrophysics Data System (ADS)

    Zakariyah, Shefiu S.; Conway, Paul P.; Hutt, David A.; Wang, Kai; Selviah, David R.

    2012-12-01

    The introduction of microvia and surface mount technologies into the manufacturing process for printed circuit boards (PCBs) has significantly improved the interconnection density. However, as the speed of signals for data communication on the board approaches and begins to exceed 10 Gb/s, the loss and crosstalk of copper interconnections increase. To resolve these problems, optical interconnections (OI) have been suggested as a viable solution. Literature reports have proved the photochemical nature of excimer laser ablation with its minimal thermal effect, and other ultra-violet lasers are also being investigated for the fabrication of polymer waveguides by laser ablation. In this paper, the authors demonstrate the fabrication of multimode optical polymer waveguides by using infra-red 10.6 μm CO2 laser micromachining to etch acrylate-based photopolymer (Truemode™). CO2 lasers offer a low cost and high speed fabrication route as CO2 lasers can be used to cut through various engineering materials including polymers and metals. The paper characterises the relationship between the laser ablation power, the fabrication speed and the resulting effect on the waveguide optical insertion loss for the first time.

  1. A numerical study of the influence of interconnected conductive paths in electrically resistive rocks

    NASA Astrophysics Data System (ADS)

    Mandolesi, E.; Moorkamp, M.; Jones, A. G.

    2013-12-01

    Several electromagnetic (EM) geophysical methods focus on the EM properties of rocks and sediments to determine a reliable image of the subsurface, while the same electromagnetic properties are measured in the laboratory with a wide range of instruments and techniques. None of these measurements return an unequivocal result. The hypothesis related to the presence of interconnected pathways of electrically conductive materials in resistive hosts has been studied with increasing interest in recent years, and the comprehension of phenomena that scale from the microstructures of the rocks up to field electrical conductivity measurements represents the boundary that prevents the direct comparison between laboratory data and field data. In recent years some numerical approaches have been investigated to understand the effects of interconnected pathways of conductors on field measurements, usually restricting the studies to direct current (DC) sources. Bearing in mind the time-variating nature of natural electromagnetic sources that take a role in field measurements, we numerically simulated the effects of such EM sources on the conductivity measured on the surface of a three-dimensional realistic body embedded in an uniform host by using electromagnetic induction equations. Since most real rocks are poor conductors, we modeled a two-phase mixture of rock and interconnected conductive elements (representing melts, saline fluids, sulphidic, carbonitic, or metallic sediments, etc.), randomly generated within the background host. We compared the electrical conductivity measured from a sample of randomly generated models with the electrical conductivity limits predicted by Hashin-Shtrikman bounds.

  2. Novel multilevel inverter carrier-based PWM method

    SciTech Connect

    Tolbert, L.M.; Habetler, T.G.

    1999-10-01

    The advent of the transformerless multilevel inverter topology has brought forth various pulsewidth modulation (PWM) schemes as a means to control the switching of the active devices in each of the multiple voltage levels in the inverter. An analysis of how existing multilevel carrier-based PWM affects switch utilization for the different levels of a diode-clamped inverter is conducted. Two novel carrier-based multilevel PWM schemes are presented which help to optimize or balance the switch utilization in multilevel inverters. A 10-kW prototype six-level diode-clamped inverter has been built and controlled with the novel PWM strategies proposed in this paper to act as a voltage-source inverter for a motor drive.

  3. Squeezed light from conventionally pumped multi-level lasers

    NASA Technical Reports Server (NTRS)

    Ralph, T. C.; Savage, C. M.

    1992-01-01

    We have calculated the amplitude squeezing in the output of several conventionally pumped multi-level lasers. We present results which show that standard laser models can produce significantly squeezed outputs in certain parameter ranges.

  4. Integrated structure/control law design by multilevel optimization

    NASA Technical Reports Server (NTRS)

    Gilbert, Michael G.; Schmidt, David K.

    1989-01-01

    A new approach to integrated structure/control law design based on multilevel optimization is presented. This new approach is applicable to aircraft and spacecraft and allows for the independent design of the structure and control law. Integration of the designs is achieved through use of an upper level coordination problem formulation within the multilevel optimization framework. The method requires the use of structure and control law design sensitivity information. A general multilevel structure/control law design problem formulation is given, and the use of Linear Quadratic Gaussian (LQG) control law design and design sensitivity methods within the formulation is illustrated. Results of three simple integrated structure/control law design examples are presented. These results show the capability of structure and control law design tradeoffs to improve controlled system performance within the multilevel approach.

  5. Multilevel Atomic Coherent States and Atomic Holomorphic Representation

    NASA Technical Reports Server (NTRS)

    Cao, Chang-Qi; Haake, Fritz

    1996-01-01

    The notion of atomic coherent states is extended to the case of multilevel atom collective. Based on atomic coherent states, a holomorphic representation for atom collective states and operators is defined. An example is given to illustrate its application.

  6. Optics vs copper: from the perspective of "Thunderbolt" interconnect technology

    NASA Astrophysics Data System (ADS)

    Cheng, Hengju; Krause, Christine; Ko, Jamyuen; Gao, Miaobin; Liu, Guobin; Wu, Huichin; Qi, Mike; Lam, Chun-Chit

    2013-02-01

    Interconnect technology has been progressed at a very fast pace for the past decade. The signaling rates have steadily increased from 100:Mb/s to 25Gb/s. In every generation of interconnect technology evolution, optics always seems to take over at first, however, at the end, the cost advantage of copper wins over. Because of this, optical interconnects are limited to longer distance links where the attenuation in copper cable is too large for the integrated circuits to compensate. Optical interconnect has long been viewed as the premier solution in compared with copper interconnect. With the release of Thunderbolt technology, we are entering a new era in consumer electronics that runs at 10Gb/s line rate (20Gb/s throughput per connector interface). Thunderbolt interconnect technology includes both active copper cables and active optical cables as the transmission media which have very different physical characteristics. In order for optics to succeed in consumer electronics, several technology hurdles need to be cleared. For example, the optical cable needs to handle the consumer abuses such as pinch and bend. Also, the optical engine used in the active optical cable needs to be physically very small so that we don't change the looks and feels of the cable/connector. Most importantly, the cost of optics needs to come down significantly to effectively compete with the copper solution. Two interconnect technologies are compared and discussed on the relative cost, power consumption, form factor, density, and future scalability.

  7. New approach to improve interconnection relaying for IPPs

    SciTech Connect

    Hartmann, W.G.; Mirchandani, H.; Callender, M.

    1999-11-01

    This paper discusses the interconnection protective relaying practices of Independent Power Producers (IPPs) with the utility grid. Specifically addressed are smaller IPPs in the kW and lower MW range (typically less than 10 MW), where relaying at the interconnection may function without the aid of sophisticated and expensive communication links to the utility substation. A novel protection tactic employing frequency rate-of-change is introduced as a possible method of increasing the security, reliability and speed of the IPP interconnection protection.

  8. Multi-level bandwidth efficient block modulation codes

    NASA Technical Reports Server (NTRS)

    Lin, Shu

    1989-01-01

    The multilevel technique is investigated for combining block coding and modulation. There are four parts. In the first part, a formulation is presented for signal sets on which modulation codes are to be constructed. Distance measures on a signal set are defined and their properties are developed. In the second part, a general formulation is presented for multilevel modulation codes in terms of component codes with appropriate Euclidean distances. The distance properties, Euclidean weight distribution and linear structure of multilevel modulation codes are investigated. In the third part, several specific methods for constructing multilevel block modulation codes with interdependency among component codes are proposed. Given a multilevel block modulation code C with no interdependency among the binary component codes, the proposed methods give a multilevel block modulation code C which has the same rate as C, a minimum squared Euclidean distance not less than that of code C, a trellis diagram with the same number of states as that of C and a smaller number of nearest neighbor codewords than that of C. In the last part, error performance of block modulation codes is analyzed for an AWGN channel based on soft-decision maximum likelihood decoding. Error probabilities of some specific codes are evaluated based on their Euclidean weight distributions and simulation results.

  9. Hydraulically interconnected vehicle suspension: handling performance

    NASA Astrophysics Data System (ADS)

    Smith, Wade A.; Zhang, Nong; Hu, William

    2011-02-01

    This paper extends recent research on vehicles with hydraulically interconnected suspension (HIS) systems. Such suspension schemes have received considerable attention in the research community over the last few years. This is due, in part, to their reported ability to provide stiffness and damping rates dependent on the suspension mode of operation (i.e. the bounce, roll, pitch or articulation of the unsprung masses relative to the sprung mass), rather than relying on the stiffness and damping characteristics of the single wheel stations. The paper uses a nine-degrees-of-freedom (DOF) vehicle model and simulations of a fishhook manoeuvre to assess the handling performance of a vehicle when it is fitted with: (a) a conventional independent suspension, and (b) an HIS. In the case of the latter, the fluid subsystem is modelled using a nonlinear finite-element approach, resulting in a set of coupled, first-order nonlinear differential equations, which describe the dynamics of the integrated mechanical-hydraulic vehicle system. The simulation results indicate that, in general, the HIS-equipped vehicle possesses superior handling, as measured by the sprung mass roll angle, roll rate, roll acceleration, lateral acceleration and the vehicle's Rollover Critical Factor. The potential effects of the suspension set-up on ride performance are also considered by studying the transient response when one side of the vehicle traverses a half-sine bump. The obtained results are then discussed, and it is shown that they are consistent with previous findings, both by the authors and other researchers. The presented work outlines an alternative approach for studying the dynamics of HIS-equipped vehicles, particularly suited to analyses in the time domain.

  10. A new class of rearrangeable interconnection networks

    SciTech Connect

    Douglass, B.G.

    1989-01-01

    With the current interest in general purpose multiprocessing systems and distributed processing networks, a need exists for rearrangeable interconnection networks. These networks can simultaneously transmit information from all sources to all destinations, for all possible combinations of destinations. Such networks exist, and among these the Benes network is of asymptotically optimal hardware complexity. However, this network requires excessive time to recompute the switch settings each time a new set of transmissions is requested by the source processors. Some algorithms exist to reduce this time overhead but they require excessive hardware to compute the settings. This thesis introduces a new class of rearrangeable networks, called reduced networks, based on an extension of Clos three-stage networks. It is shown that the switches in the first and third stages of Clos networks can be constructed as unique path logarithmic networks. Only the center-stage switches must be rearrangeable. This fact is then used to develop a compact network structure. The routing properties of this structure are defined, and it is shown that there is a connectivity in the setting of the switches for any Clos network. An upper and lower bound on this connectivity are established, leading to a fast routing algorithm, with a trade off between the routing time and the network hardware complexity. This can be exploited by the network designer to achieve the best combination of hardware cost and data transfer rate for the particular application. For network sizes contemplated within the foreseeable future, the resulting design will in most cases be closer to the ideal combination than any other network.

  11. Stability of chromite interconnections in dual environments

    SciTech Connect

    Armstrong, T.R.; Stevenson, J.W.; Raney, P.; Pederson, L.R.

    1994-11-01

    One of the most critical technical concerns in high-temperature SOFCs is the physical, chemical, and electrical stability of the interconnect (typically a doped lanthanum chromite) in the dual (oxidizing and reducing atmosphere) SOFC environment. The reducing or fuel side may experience oxygen partial pressures (P(O{sub 2})) from 10{sup {minus}18} to 10{sup {minus}6} atmospheres, while the oxidizing side may have P(O{sub 2}) from 10{sup {minus}6} to greater than 1 atm. These conditions limit the possible candidate materials to lanthanum or yttrium chromites. In the past decade, much work has centered on development of air-sinterable chromites and understanding their physical properties; little work, however, has focused on the stability of these chromites in dual environments. Chromite powders were synthesized using the glycine-nitrate process. The powders were calcined at 1,000 C for 1 hour and then uniaxially pressed into bars (46mm x 16mm x 3mm) at 55 MPa and isostatically pressed at 138 MPa. Samples were sintered in air. The dependence of the physical properties of sintered lanthanum chromites upon ambient P(O{sub 2}) and temperature (using dilatometry, thermogravimetric analysis, and oxygen permeation measurements) were studied. La{sub 1{minus}x}A{sub x}CrO{sub 3} and Y{sub 1{minus}x}Ca{sub x}CrO{sub 3}, where A is Ca or Sr and x was varied from 0.1 to 0.4 were evaluated in this study. The P(O{sub 2}) was varied using a buffered CO{sub 2}/Ar-4%H{sub 2} gas system, enabling expansion measurements to be made over a partial pressure range from 10{sup {minus}5} to 10{sup {minus}18} atmosphere at 800, 900, and 1,000 C.

  12. 14. Control Area, Interconnecting Corridor and Frequency Changer and Generator ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    14. Control Area, Interconnecting Corridor and Frequency Changer and Generator Building, general view VIEW SOUTHWEST, NORTH ELEVATION - NIKE Missile Battery PR-79, Control Area, Tucker Hollow Road south of State Route 101, Foster, Providence County, RI

  13. Design of an optical interconnect for photonic backplane applications.

    PubMed

    Robertson, B

    1998-05-10

    A compact alignment-tolerant interconnect has been developed for use within a prototype modulator-based free-space photonic backplane. The interconnect design encompasses several unique features. Microlens arrays are used, and several beams share each microlens by clustering the optical input-output in a small field about the optical axis of each lens. For simplifying the layout, the optical input and output of each smart-pixel array are clustered separately, thereby allowing a Fourier plane patterned-mirror array to be used in the beam-combination optics. This allows a suitable balance between high interconnection densities and reasonable optical relay distances between adjacent boards to be achieved. The primary advantages of this scheme are the simplicity of the optical design and its alignability, making it ideally suited for high-density interconnection applications. PMID:18273244

  14. Free-Space Optical Interconnect Employing VCSEL Diodes

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  15. Fault-tolerant interconnection networks for multiprocessor systems

    SciTech Connect

    Nassar, H.M.

    1989-01-01

    Interconnection networks represent the backbone of multiprocessor systems. A failure in the network, therefore, could seriously degrade the system performance. For this reason, fault tolerance has been regarded as a major consideration in interconnection network design. This thesis presents two novel techniques to provide fault tolerance capabilities to three major networks: the Beneline network and the Clos network. First, the Simple Fault Tolerance Technique (SFT) is presented. The SFT technique is in fact the result of merging two widely known interconnection mechanisms: a normal interconnection network and a shared bus. This technique is most suitable for networks with small switches, such as the Baseline network and the Benes network. For the Clos network, whose switches may be large for the SFT, another technique is developed to produce the Fault-Tolerant Clos (FTC) network. In the FTC, one switch is added to each stage. The two techniques are described and thoroughly analyzed.

  16. Delay model for dynamically switching coupled RLC interconnects

    NASA Astrophysics Data System (ADS)

    Sharma, Devendra Kumar; Kaushik, Brajesh Kumar; Sharma, Rajender Kumar

    2014-04-01

    With the evolution of integrated circuit technology, the interconnect parasitics can be the limiting factor in high speed signal transmission. With increasing frequency of operation, length of interconnect and fast transition time of the signal, the RC models are not sufficient to estimate the delay accurately. To mitigate this problem, accurate delay models for coupled interconnects are very much required. This paper proposes an analytical model for estimating propagation delay in lossy coupled RLC interconnect lines for simultaneously switching scenario. To verify the proposed model, the analytical results are compared with those of FDTD and SPICE results for the two cases of inputs switching under consideration. An average error of 2.07% is observed which shows an excellent agreement with SPICE simulation and FDTD computations.

  17. 14 CFR 25.701 - Flap and slat interconnection.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... equivalent means. (b) If a wing flap or slat interconnection or equivalent means is used, it must be designed... be designed for the loads imposed when the wing flaps or slats on one side are carrying the...

  18. Printing Stretchable Spiral Interconnects Using Reactive Ink Chemistries.

    PubMed

    Mamidanna, Avinash; Song, Zeming; Lv, Cheng; Lefky, Christopher S; Jiang, Hanqing; Hildreth, Owen J

    2016-05-25

    Stretchable electronics have important applications in health monitoring and integrated lab-on-a-chip devices. This paper discusses the performance of serpentine stretchable interconnects printed using self-reducing, silver reactive inks. It details process optimization, device fabrication, and device characterization, while demonstrating the potential applications for reactive inks and new design strategies in stretchable electronics. Devices were printed with an ethanol stabilized silver diamine reactive ink and cycled to stretch ratios of 140 and 160% over 1000 cycles with less than 2.5% variation in electrical resistance. Maximum deformation before failure was measured at 180% elongation. Additionally, interconnect deformation was compared to finite element analysis (FEA) simulations to show that FEA can be used to accurately model the deformation of low-strain printed interconnects. Overall, this paper demonstrates a simple and affordable route toward stretchable electrical interconnects. PMID:27158736

  19. In-Plane Biocompatible Microfluidic Interconnects for Implantable Microsystems

    PubMed Central

    Johnson, Dean G.; Frisina, Robert D.; Borkholder, David A.

    2011-01-01

    Small mammals, particularly mice, are very useful animal models for biomedical research. Extremely small anatomical dimensions, however, make design of implantable microsystems quite challenging. A method for coupling external fluidic systems to microfluidic channels via in-plane interconnects is presented. Capillary tubing is inserted into channels etched in the surface of a Si wafer with a seal created by Parylene-C deposition. Prediction of Parylene-C deposition into tapered channels based on Knudsen diffusion and deposition characterizations allows for design optimization. Low-volume interconnects using biocompatible, chemical resistant materials have been demonstrated and shown to withstand pressure as high as 827 kPa (120 psi) with an average pull test strength of 2.9 N. Each interconnect consumes less than 0.018 mm3 (18 nL) of volume. The low added volume makes this an ideal interconnect technology for medical applications where implant volume is critical. PMID:21147591

  20. Network motifs emerge from interconnections that favour stability

    NASA Astrophysics Data System (ADS)

    Angulo, Marco Tulio; Liu, Yang-Yu; Slotine, Jean-Jacques

    2015-10-01

    The microscopic principles organizing dynamic units in complex networks--from proteins to power generators--can be understood in terms of network `motifs’: small interconnection patterns that appear much more frequently in real networks than expected in random networks. When considered as small subgraphs isolated from a large network, these motifs are more robust to parameter variations, easier to synchronize than other possible subgraphs, and can provide specific functionalities. But one can isolate these subgraphs only by assuming, for example, a significant separation of timescales, and the origin of network motifs and their functionalities when embedded in larger networks remain unclear. Here we show that most motifs emerge from interconnection patterns that best exploit the intrinsic stability characteristics at different scales of interconnection, from simple nodes to whole modules. This functionality suggests an efficient mechanism to stably build complex systems by recursively interconnecting nodes and modules as motifs. We present direct evidence of this mechanism in several biological networks.

  1. Manufacturing and quality control of interconnecting wire harnesses, Volume 2

    NASA Technical Reports Server (NTRS)

    1972-01-01

    Interconnecting wire harnesses defined in the design standard are considered, including type 4, open bundle (not enclosed). Knowledge gained through experience on the Saturn 5 program coupled with recent advances in techniques, materials, and processes was incorporated into the document.

  2. Developing Generic Dynamic Models for the 2030 Eastern Interconnection Grid

    SciTech Connect

    Kou, Gefei; Hadley, Stanton W; Markham, Penn N; Liu, Yilu

    2013-12-01

    The Eastern Interconnection Planning Collaborative (EIPC) has built three major power flow cases for the 2030 Eastern Interconnection (EI) based on various levels of energy/environmental policy conditions, technology advances, and load growth. Using the power flow cases, this report documents the process of developing the generic 2030 dynamic models using typical dynamic parameters. The constructed model was validated indirectly using the synchronized phasor measurements by removing the wind generation temporarily.

  3. Preliminary reliability evaluation of flip chip on flex interconnect technology

    NASA Technical Reports Server (NTRS)

    Shaw, Jack J.; Virmani, Naresh

    1997-01-01

    The study was carried out to evaluate the flip-chip-on-flex (FCOF) interconnection process in order to determine its feasibility for space flight applications. The key objectives were to: develop and apply simple and cost effective process steps needed to manufacture FCOFs and build test samples; perform a preliminary technology validation, and determine any initial environmental or application risks. The FCOF was shown to be simpler and more economical than other chip interconnection schemes.

  4. The organization of permutation architectures with bussed interconnections

    NASA Astrophysics Data System (ADS)

    Kilian, Joe; Kipnis, Sholomo; Leiserson, Charles E.

    1989-01-01

    The problem of efficiently permuting data stored in VLSI chips is explored in accordance with a predetermined set of permutations. By connecting chips with shared bus interconnections, as opposed to point-to-point interconnections, it is shown that the number of pins per chip can often be reduced. Uniform permutation architectures were also considered that realize permutations in several clock ticks, instead of one, and show that further savings in the number of pins per chip can be obtained.

  5. The organization of permutation architectures with bused interconnections

    NASA Astrophysics Data System (ADS)

    Kilian, Joe; Kipnis, Shlomo; Leiserson, Charles E.

    1990-11-01

    The problem of efficiently permuting data stored in VLSI chips is explored, in accordance with a predetermined set of permutations. By connecting chips with shared bus interconnections, as opposed to point-to-point interconnections, it is shown that the number of pins per chip can often be reduced. Uniform permutation architectures are also considered that realize permutations in several clock ticks, instead of one, and it is demonstrated that further savings in the number of pins per chip can be obtained.

  6. Method for fabricating an interconnected array of semiconductor devices

    NASA Technical Reports Server (NTRS)

    Grimmer, Derrick P. (Inventor)

    1995-01-01

    A method of forming an array of interconnected solar cells. A flexible substrate carrying semiconductor and conductive layers is divided into individual devices by slitting the substrate along the web length. The individual devices are then connected with one another in series by laminating the substrate onto an insulating backing and by depositing conducting interconnection layers which join the lower conductor of one device with the top conductor of the adjoining device.

  7. Monolithic microwave integrated circuits: Interconnections and packaging considerations

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Downey, A. N.; Ponchak, G. E.; Romanofsky, R. R.; Anzic, G.; Connolly, D. J.

    1984-01-01

    Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

  8. Capacitance extraction from complex 3D interconnect structures

    SciTech Connect

    Cartwright, D.; Csanak, G.; George, D.; Walker, R.; Kuprat, A.; Dengi, A.; Grobman, W.

    1999-06-01

    A new tool has been developed for calculating the capacitance matrix for complex 3D interconnect structures involving multiple layers of irregularly shaped interconnect, imbedded in different dielectric materials. This method utilizes a new 3D adaptive unstructured grid capability, and a linear finite element algorithm. The capacitance is determined from the minimum in the total system energy as the nodes are varied to minimize the error in the electric field in the dielectric(s).

  9. Feasibility of optically interconnected parallel processors using wavelength division multiplexing

    SciTech Connect

    Deri, R.J.; De Groot, A.J.; Haigh, R.E.

    1996-03-01

    New national security demands require enhanced computing systems for nearly ab initio simulations of extremely complex systems and analyzing unprecedented quantities of remote sensing data. This computational performance is being sought using parallel processing systems, in which many less powerful processors are ganged together to achieve high aggregate performance. Such systems require increased capability to communicate information between individual processor and memory elements. As it is likely that the limited performance of today`s electronic interconnects will prevent the system from achieving its ultimate performance, there is great interest in using fiber optic technology to improve interconnect communication. However, little information is available to quantify the requirements on fiber optical hardware technology for this application. Furthermore, we have sought to explore interconnect architectures that use the complete communication richness of the optical domain rather than using optics as a simple replacement for electronic interconnects. These considerations have led us to study the performance of a moderate size parallel processor with optical interconnects using multiple optical wavelengths. We quantify the bandwidth, latency, and concurrency requirements which allow a bus-type interconnect to achieve scalable computing performance using up to 256 nodes, each operating at GFLOP performance. Our key conclusion is that scalable performance, to {approx}150 GFLOPS, is achievable for several scientific codes using an optical bus with a small number of WDM channels (8 to 32), only one WDM channel received per node, and achievable optoelectronic bandwidth and latency requirements. 21 refs. , 10 figs.

  10. Reconfigurable Hybrid Interconnection for Static and DynamicScientific Applications

    SciTech Connect

    Kamil, Shoaib; Pinar, Ali; Gunter, Daniel; Lijewski, Michael; Oliker, Leonid; Shalf, John; Skinner, David

    2006-04-25

    As we enter the era of petascale computing, system architects must plan for machines composed of tens of thousands or even hundreds of thousands of processors. Although fully connected networks such as fat-tree interconnects currently dominate HPC network designs, such approaches are inadequate for thousands of processors due to the superlinear growth of component costs. Traditional low-degree interconnect topologies, such as the 3D torus, have reemerged as a competitive solution because the number of switch components scales linearly with the node count, but such networks are poorly suited for the requirements of many scientific applications. We present our latest work on a hybrid switch architecture called HFAST that uses circuit switches to dynamically reconfigure a lower-degree interconnect to suit the topological requirements of each scientific application. This paper expands upon our prior work on the requirements of non-adaptive applications by analyzing the communication characteristics of dynamically adapting AMR code and presents a methodology that captures the evolving communication requirements. We also present a new optimization that computes the under-utilization of fat-tree interconnects for a given communication topology, showing the potential of constructing a ''fit-tree'' for the application by using the HFAST circuit switches to provision an optimal interconnect topology for each application. Finally, we apply our new optimization technique to the communication requirements of the AMR code to demonstrate the potential of using dynamic reconfiguration of the HFAST interconnect between the communication intensive phases of a dynamically adapting application.

  11. Solid-state energy storage module employing integrated interconnect board

    DOEpatents

    Rouillard, Jean; Comte, Christophe; Daigle, Dominik; Hagen, Ronald A.; Knudson, Orlin B.; Morin, Andre; Ranger, Michel; Ross, Guy; Rouillard, Roger; St-Germain, Philippe; Sudano, Anthony; Turgeon, Thomas A.

    2000-01-01

    The present invention is directed to an improved electrochemical energy storage device. The electrochemical energy storage device includes a number of solid-state, thin-film electrochemical cells which are selectively interconnected in series or parallel through use of an integrated interconnect board. The interconnect board is typically disposed within a sealed housing which also houses the electrochemical cells, and includes a first contact and a second contact respectively coupled to first and second power terminals of the energy storage device. The interconnect board advantageously provides for selective series or parallel connectivity with the electrochemical cells, irrespective of electrochemical cell position within the housing. In one embodiment, a sheet of conductive material is processed by employing a known milling, stamping, or chemical etching technique to include a connection pattern which provides for flexible and selective interconnecting of individual electrochemical cells within the housing, which may be a hermetically sealed housing. Fuses and various electrical and electro-mechanical devices, such as bypass, equalization, and communication devices for example, may also be mounted to the interconnect board and selectively connected to the electrochemical cells.

  12. Chip-to-board interconnects for high-performance computing

    NASA Astrophysics Data System (ADS)

    Riester, Markus B. K.; Houbertz-Krauss, Ruth; Steenhusen, Sönke

    2013-02-01

    Super computing is reaching out to ExaFLOP processing speeds, creating fundamental challenges for the way that computing systems are designed and built. One governing topic is the reduction of power used for operating the system, and eliminating the excess heat generated from the system. Current thinking sees optical interconnects on most interconnect levels to be a feasible solution to many of the challenges, although there are still limitations to the technical solutions, in particular with regard to manufacturability. This paper explores drivers for enabling optical interconnect technologies to advance into the module and chip level. The introduction of optical links into High Performance Computing (HPC) could be an option to allow scaling the manufacturing technology to large volume manufacturing. This will drive the need for manufacturability of optical interconnects, giving rise to other challenges that add to the realization of this type of interconnection. This paper describes a solution that allows the creation of optical components on module level, integrating optical chips, laser diodes or PIN diodes as components much like the well known SMD components used for electrical components. The paper shows the main challenges and potential solutions to this challenge and proposes a fundamental paradigm shift in the manufacturing of 3-dimensional optical links for the level 1 interconnect (chip package).

  13. Cascading failures in interconnected networks with dynamical redistribution of loads

    NASA Astrophysics Data System (ADS)

    Zhao, Zhuang; Zhang, Peng; Yang, Hujiang

    2015-09-01

    Cascading failures of loads in isolated networks and coupled networks have been studied in the past few years. In most of the corresponding results, the topologies of the networks are destroyed. Here, we present an interconnected network model considering cascading failures based on the dynamic redistribution of flow in the networks. Compared with the results of single scale-free networks, we find that interconnected scale-free networks have higher vulnerability. Additionally, the network heterogeneity plays an important role in the robustness of interconnected networks under intentional attacks. Considering the effects of various coupling preferences, the results show that there are almost no differences. Finally, the application of our model to the Beijing interconnected traffic network, which consists of a subway network and a bus network, shows that the subway network suffers more damage under the attack. Moreover, the interconnected traffic network may be more exposed to damage after initial attacks on the bus network. These discussions are important for the design and optimization of interconnected networks.

  14. Multi-level Simulation of a Real Time Vibration Monitoring System Component

    NASA Technical Reports Server (NTRS)

    Roberston, Bryan; Wilkerson, DeLisa

    2004-01-01

    This paper describes the development of a custom built Digital Signal Processing (DSP) printed circuit board designed to implement the Advanced Real Time Vibration Monitoring Subsystem proposed by MSFC Transportation Directorate in 2000 for the Space Shuttle Main Engine Advanced Health Management System (AHMS). This Real Time Vibration Monitoring System (RTVMS) is being developed for ground use as part of the AHMS Health Management Computer-Integrated Rack Assembly (HMC-IRA). The HMC-IRA RTVMS design contains five DSPs which are highly interconnected through individual communication ports, shared memory, and a unique communication router that allows all the DSPs to receive digitized data from two multi-channel analog boards simultaneously. This paper will briefly cover the overall board design but will focus primarily on the state-of-the-art simulation environment within which this board was developed. This 16-layer board with over 1800 components and an additional mezzanine card has been an extremely challenging design. Utilization of a Mentor Graphics simulation environment provided the unique board and system level simulation capability to ascertain any timing or functional concerns before production. By combining VHDL, Synopsys Software and Hardware Models, and the Mentor Design Capture Environment, multiple simulations were developed to verify the RTVMS design. This multi-level simulation allowed the designers to achieve complete operability without error the first time the RTVMS printed circuit board was powered. The HMCIRA design has completed all engineering unit testing and the deliverable unit is currently under development.

  15. Multi-level Simulation of a Real Time Vibration Monitoring System Component

    NASA Technical Reports Server (NTRS)

    Robertson, Bryan A.; Wilkerson, Delisa

    2005-01-01

    This paper describes the development of a custom built Digital Signal Processing (DSP) printed circuit board designed to implement the Advanced Real Time Vibration Monitoring Subsystem proposed by Marshall Space Flight Center (MSFC) Transportation Directorate in 2000 for the Space Shuttle Main Engine Advanced Health Management System (AHMS). This Real Time Vibration Monitoring System (RTVMS) is being developed for ground use as part of the AHMS Health Management Computer-Integrated Rack Assembly (HMC-IRA). The HMC-IRA RTVMS design contains five DSPs which are highly interconnected through individual communication ports, shared memory, and a unique communication router that allows all the DSPs to receive digitized data fiom two multi-channel analog boards simultaneously. This paper will briefly cover the overall board design but will focus primarily on the state-of-the-art simulation environment within which this board was developed. This 16-layer board with over 1800 components and an additional mezzanine card has been an extremely challenging design. Utilization of a Mentor Graphics simulation environment provided the unique board and system level simulation capability to ascertain any timing or functional concerns before production. By combining VHDL, Synopsys Software and Hardware Models, and the Mentor Design Capture Environment, multiple simulations were developed to verify the RTVMS design. This multi-level simulation allowed the designers to achieve complete operability without error the first time the RTVMS printed circuit board was powered. The HMC-IRA design has completed all engineering and deliverable unit testing. P

  16. Chip-to-chip interconnects based on 3D stacking of optoelectrical dies on Si

    NASA Astrophysics Data System (ADS)

    Duan, P.; Raz, O.; Smalbrugge, B. E.; Duis, J.; Dorren, H. J. S.

    2012-01-01

    We demonstrate a new approach to increase the optical interconnection bandwidth density by stacking the opto-electrical dies directly on the CMOS driver. The suggested implementation is aiming to provide a wafer scale process which will make the use of wire bonding redundant and will allow for impedance matched metallic wiring between the electronic driving circuit and its opto-electronic counter part. We suggest the use of a thick photoresist ramp between CMOS driver and opto-electrical dies surface as the bridge for supporting co-plannar waveguides (CPW) electrically plated with lithographic accuracy. In this way all three dimensions of the interconnecting metal layer, width, length and thickness can be completely controlled. In this 1st demonstration all processing is done on commercially available devices and products, and is compatible with CMOS processing technology. To test the applicability of CPW instead of wire bonds for interconnecting the CMOS circuit and opto-electronic chips, we have made test samples and tested their performance at speeds up to 10 Gbps. In this demonstration, a silicon substrate was used on which we evaporated gold co-planar waveguides (CPW) to mimic a wire on the driver. An optical link consisting of a VCSEL chip and a photodiode chip has been assembled and fully characterized using optical coupling into and out of a multimode fiber (MMF). A 10 Gb/s 27-1 NRZ PRBS signal transmitted from one chip to another chip was detected error free. A 4 dB receiver sensitivity penalty is measured for the integrated device compared to a commercial link.

  17. Laser micromachining of through via interconnects in active die for 3-D multichip module

    SciTech Connect

    Chu, D.; Miller, W.D.

    1995-09-01

    One method to increase density in integrated circuits (IC) is to stack die to create a 3-D multichip module (MCM). In the past, special post wafer processing was done to bring interconnects out to the edge of the die. The die were sawed, glued, and stacked. Special processing was done to create interconnects on the edge to provide for interconnects to each of the die. These processes require an IC type fabrication facility (fab) and special processing equipment. In contrast, we have developed packaging assembly methods to created vertical through vias in bond pads of active silicon die, isolate these vias, and metal fill these vias without the use of a special IC fab. These die with through vias can then be joined and stacked to create a 3-D MCM. Vertical through vias in active die are created by laser micromachining using a Nd:YAG laser. Besides the fundamental 1064 nm (infra-red) laser wavelength of a Nd:YAG laser, modifications to our Nd:YAG laser allowed us to generate the second harmonic 532 nm (green) laser wavelength and fourth harmonic 266nm (ultra violet) laser wavelength in laser micromachining for these vias. Experiments were conducted to determine the best laser wavelengths to use for laser micromachining of vertical through vias in order to minimize damage to the active die. Via isolation experiments were done in order to determine the best method in isolating the bond pads of the die. Die thinning techniques were developed to allow for die thickness as thin as 50 {mu}m. This would allow for high 3-D density when the die are stacked. A method was developed to metal fill the vias with solder using a wire bonder with solder wire.

  18. Multilevel Cross-dependent Binary Longitudinal Data

    PubMed Central

    Staicu, Ana-Maria; Carroll, Raymond J.

    2013-01-01

    We provide insights into new methodology for the analysis of multilevel binary data observed longitudinally, when the repeated longitudinal measurements are correlated. The proposed model is logistic functional regression conditioned on three latent processes describing the within- and between-variability, and describing the cross-dependence of the repeated longitudinal measurements. We estimate the model components without employing mixed-effects modeling but assuming an approximation to the logistic link function. The primary objectives of this paper are to highlight the challenges in the estimation of the model components, to compare two approximations to the logistic regression function, linear and exponential, and to discuss their advantages and limitations. The linear approximation is computationally efficient whereas the exponential approximation applies for rare events functional data. Our methods are inspired by and applied to a scientific experiment on spectral backscatter from long range infrared light detection and ranging (LIDAR) data. The models are general and relevant to many new binary functional data sets, with or without dependence between repeated functional measurements. PMID:24131242

  19. Gaussian translation operator in a multilevel scheme

    NASA Astrophysics Data System (ADS)

    Hansen, Thorkild B.; Borries, Oscar

    2015-08-01

    A multilevel computation scheme for time-harmonic fields in three dimensions will be formulated with a new Gaussian translation operator that decays exponentially outside a circular cone centered on the line connecting the source and observation groups. This Gaussian translation operator is directional and diagonal with its sharpness determined by a beam parameter. When the beam parameter is set to zero, the Gaussian translation operator reduces to the standard fast multipole method translation operator. The directionality of the Gaussian translation operator makes it possible to reduce the number of plane waves required to achieve a given accuracy. The sampling rate can be determined straightforwardly to achieve any desired accuracy. The use of the computation scheme will be illustrated through a near-field scanning problem where the far-field pattern of a source is determined from near-field measurements with a known probe. Here the Gaussian translation operator improves the condition number of the matrix equation that determines the far-field pattern. The Gaussian translation operator can also be used when the probe pattern is known only in one hemisphere, as is common in practice. Also, the Gaussian translation operator will be used to solve the scattering problem of the perfectly conducting sphere.

  20. Multilevel Monte Carlo simulation of Coulomb collisions

    DOE PAGESBeta

    Rosin, M. S.; Ricketson, L. F.; Dimits, A. M.; Caflisch, R. E.; Cohen, B. I.

    2014-05-29

    We present a new, for plasma physics, highly efficient multilevel Monte Carlo numerical method for simulating Coulomb collisions. The method separates and optimally minimizes the finite-timestep and finite-sampling errors inherent in the Langevin representation of the Landau–Fokker–Planck equation. It does so by combining multiple solutions to the underlying equations with varying numbers of timesteps. For a desired level of accuracy ε , the computational cost of the method is O(ε–2) or (ε–2(lnε)2), depending on the underlying discretization, Milstein or Euler–Maruyama respectively. This is to be contrasted with a cost of O(ε–3) for direct simulation Monte Carlo or binary collision methods.more » We successfully demonstrate the method with a classic beam diffusion test case in 2D, making use of the Lévy area approximation for the correlated Milstein cross terms, and generating a computational saving of a factor of 100 for ε=10–5. Lastly, we discuss the importance of the method for problems in which collisions constitute the computational rate limiting step, and its limitations.« less