Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

NASA Astrophysics Data System (ADS)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Loss analysis and optimum design of a highly efficient and compact CMOS DC–DC converter with novel transistor layout using 60 nm multipillar-type vertical body channel MOSFET

NASA Astrophysics Data System (ADS)

Itoh, Kazuki; Endoh, Tetsuo

2018-04-01

In this paper, we present a novel transistor layout of multi pillar-type vertical body-channel (BC) MOSFET for cascode power switches for improving the efficiency and compactness of CMOS DC–DC converters. The proposed layout features a stacked and multifingered layout to suppress the loss due to parasitic components such as diffusion resistance and contact resistance. In addition, the loss of each MOSFET, which configures cascode power switches, is analyzed, and it is revealed that the total optimum gate width and loss with the high-side (HS) n-type MOSFET topology are 27 and 16% smaller than those with the HS p-type MOSFET topology, respectively. Moreover, a circuit simulation of 2.0 to 0.8 V, 100 MHz CMOS DC–DC converters with the proposed layout is carried out by using experimentally extracted models of BSIM4 60 nm vertical BC MOSFETs. The peak efficiency of the HS n-type MOSFET converter with the proposed layout is 90.1%, which is 6.0% higher than that with the conventional layout.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, James D.

1997-01-01

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.

Schottky barrier MOSFET systems and fabrication thereof

DOEpatents

Welch, J.D.

1997-09-02

(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

Prognostics of Power MOSFET

NASA Technical Reports Server (NTRS)

Celaya, Jose Ramon; Saxena, Abhinav; Vashchenko, Vladislay; Saha, Sankalita; Goebel, Kai Frank

2011-01-01

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

PubMed

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-04-04

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

NASA Astrophysics Data System (ADS)

Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

2018-04-01

The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

PubMed Central

Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

2017-01-01

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (−1.8 and −0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (−2.95 and −3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dBm input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dBm at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dBm at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dBm input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (−48.34, −44.21, −48.34, and −46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (−45.61, −41.57, −45.01, and −45.51 dB, respectively). When five

Calculating Second-Order Effects in MOSFET's

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John A.; Coss, James R.

1990-01-01

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Kumar, Ajay; Tripathi, M. M.; Chaujar, Rishu

2018-04-01

In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm technology node (Gate length = 20 nm). The integration of black phosphorus with junctionless recessed channel MOSFET, leads to higher drain current of about 0.3 mA and excellent switching ratio (of the order of 1011) due to reduced off-current which leads to improvement in sub-threshold slope (SS) (67mV/dec). Further, RF performance metrics have also been studied with an aim to analyze high-frequency performance. The following FOMs have been evaluated: cut-off frequency (fT), maximum oscillator frequency (fMAX), stern stability factor, various power gains and parasitic capacitances at THz frequency range. Thus, in addition to the high packing density offered by RC MOSFET, the proposed design finds numerous application at THz frequency making it a promising candidate at wafer scale integration level.

Four Terminal Gallium Nitride MOSFETs

NASA Astrophysics Data System (ADS)

Veety, Matthew Thomas

All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric

GaN MOSFET with Boron Trichloride-Based Dry Recess Process

NASA Astrophysics Data System (ADS)

Jiang, Y.; Wang, Q. P.; Tamai, K.; Miyashita, T.; Motoyama, S.; Wang, D. J.; Ao, J. P.; Ohno, Y.

2013-06-01

The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl3) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl4) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl3 based dry recess achieved a high maximum electron mobility of 141.5 cm2V-1s-1 and a low interface state density.

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

NASA Astrophysics Data System (ADS)

Takashima, Shinya; Ueno, Katsunori; Matsuyama, Hideaki; Inamoto, Takuro; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Nakagawa, Kiyokazu

2017-12-01

Lateral GaN MOSFETs on homoepitaxial p-GaN layers with different Mg doping concentrations ([Mg]) have been evaluated to investigate the impact of [Mg] on MOS channel properties. It is demonstrated that the threshold voltage (V th) can be controlled by [Mg] along with the theoretical curve. The field effect mobility also shows [Mg] dependence and a maximum field effect mobility of 123 cm2 V-1 s-1 is achieved on [Mg] = 6.5 × 1016 cm-3 layer with V th = 3.0 V. The obtained results indicate that GaN MOSFETs can be designed on the basis of the doping concentration of the p-GaN layer with promising characteristics for the realization of power MOSFETs.

Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

NASA Astrophysics Data System (ADS)

Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

2009-03-01

In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

Dopant distributions in n-MOSFET structure observed by atom probe tomography.

PubMed

Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

2009-11-01

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

The effects of nuclear radiation on Schottky power diodes and power MOSFETs

NASA Astrophysics Data System (ADS)

Kulisek, Jonathan Andrew

with the aid of MCNPX 2.6.0, a charged particle transport code. From the results of the calculation, it was determined that the response of both the Si and SiC diodes to the OSURR neutron and gamma-ray radiation field could be used to predict the response of the same diodes to the 203 MeV proton beam to a reasonable extent, relative to other published studies employing the same model. In addition, 100 V and 500 V power MOSFETs were irradiated in the OSURR, and their degradation in electrical performance was observed using I-V characterization. Changes in threshold voltage, transconductance parameter, and on-state resistance were observed for both 100 V and 500 V MOSFETs and were attributed to radiation-induced degradation of the SiO2 gate, Si-SiO2 interface, and n- drift layer. Furthermore, diodes and MOSFETs were irradiated and tested in basic power electronic circuits in order to determine the overall circuit response, as well as the dynamic electrical performance characteristics of the diodes and MOSFETs as they are switched from conducting (on) to non-conducting (off) states. All of the Schottky diodes maintained their voltage-blocking capability in the tested circuits, despite substantial radiation-induced increases in series resistance. Also, as radiation dose increased, an increase was observed in the turn-off delay times and turn-off times of the MOSFETs coupled with a decrease in turn-on delay time, which caused an increase in the output voltage in the buck and boost converters of which the MOSFETs were a part. Furthermore, the power dissipation in the MOSFETs during conduction and the over-voltage turn-off transient increased as a function of radiation dose, while the power dissipation during turn-on was essentially unaffected by the radiation.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

Effects of Lightning Injection on Power-MOSFETs

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

NASA Astrophysics Data System (ADS)

Ogasawara, Ryosuke; Endoh, Tetsuo

2018-04-01

In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

PubMed

Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

2016-08-22

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II.

PubMed

Keivanian, Farshid; Mehrshad, Nasser; Bijari, Abolfazl

2016-01-01

D Flip-Flop as a digital circuit can be used as a timing element in many sophisticated circuits. Therefore the optimum performance with the lowest power consumption and acceptable delay time will be critical issue in electronics circuits. The newly proposed Dual-Edge Triggered Static D Flip-Flop circuit layout is defined as a multi-objective optimization problem. For this, an optimum fuzzy inference system with fuzzy rules is proposed to enhance the performance and convergence of non-dominated sorting Genetic Algorithm-II by adaptive control of the exploration and exploitation parameters. By using proposed Fuzzy NSGA-II algorithm, the more optimum values for MOSFET channel widths and power supply are discovered in search space than ordinary NSGA types. What is more, the design parameters involving NMOS and PMOS channel widths and power supply voltage and the performance parameters including average power consumption and propagation delay time are linked. To do this, the required mathematical backgrounds are presented in this study. The optimum values for the design parameters of MOSFETs channel widths and power supply are discovered. Based on them the power delay product quantity (PDP) is 6.32 PJ at 125 MHz Clock Frequency, L = 0.18 µm, and T = 27 °C.

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

Novel power MOSFET-based expander for high frequency ultrasound systems.

PubMed

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Power MOSFET-Based Expander for High Frequency Ultrasound Systems

PubMed Central

Choi, Hojong; Shung, K. Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4 % and 240 % compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. PMID:23835308

Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Kawaji, Sachiko; Watanabe, Yukihiko; Onishi, Toru; Fujiwara, Hirokazu; Yamamoto, Kensaku; Yamamoto, Toshimasa

2017-04-01

Temperature characteristics of the channel mobility were investigated for 4H-SiC trenched MOSFETs in the range from 30 to 200 °C. The conventional model of channel mobility limited by carrier scattering is based on Si-MOSFETs and shows a greatly different channel mobility from the experimental value, especially at high temperatures. On the other hand, our improved mobility model taking into account optical phonon scattering yielded results in excellent agreement with experimental results. Moreover, the major factors limiting the channel mobility were found to be Coulomb scattering in a low effective field (<0.7 MV/cm) and optical phonon scattering in a high effective field.

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Switching transients in high-frequency high-power converters using power MOSFET's

NASA Technical Reports Server (NTRS)

Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

1979-01-01

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

Single-event burnout hardening of planar power MOSFET with partially widened trench source

NASA Astrophysics Data System (ADS)

Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

2018-03-01

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Reliability Concerns for Flying SiC Power MOSFETs in Space

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

Performance analysis of SiGe double-gate N-MOSFET

NASA Astrophysics Data System (ADS)

Singh, A.; Kapoor, D.; Sharma, R.

2017-04-01

The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

Recent Radiation Test Results for Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Topper, Alyson D.; Casey, Megan C.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak S.; LaBel, Kenneth A.

2013-01-01

Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFET

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Scheidegger, Robert J.; Lauenstein, Jean-Marie; Casey, Megan; Scheick, Leif; Hammoud, Ahmad

2013-01-01

Power systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.

Low voltage operation of GaN vertical nanowire MOSFET

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Seo, Jae Hwa; Won, Chul-Ho; Im, Ki-Sik; Lee, Yong Soo; Jang, Hwan Soo; Kim, Dae-Hyun; Kang, In Man; Lee, Jung-Hee

2018-07-01

GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall wet etching in TMAH solution and photoresist etch-back process. The VNWMOSFET exhibited output characteristics with very low saturation drain voltage of less than 0.5 V, which is hardly observed from the wide bandgap-based devices. Simulation results indicated that the narrow diameter of the VNWMOSFET with relatively short channel length is responsible for the low voltage operation. The VNWMOSFET also demonstrated normally-off mode with threshold voltage (VTH) of 0.7 V, extremely low leakage current of ∼10-14 A, low drain-induced barrier lowering (DIBL) of 125 mV/V, and subthreshold swing (SS) of 66-122 mV/decade. The GaN GAA VNWMOSFET with narrow channel diameter investigated in this work would be promising for new low voltage logic application. He has been a Professor with the School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, since 1993

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs.

PubMed

Lin, Tingyou; Ho, Yingchieh; Su, Chauchin

2017-06-15

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET) bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm². The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%.

LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power ICs

PubMed Central

Lin, Tingyou; Ho, Yingchieh; Su, Chauchin

2017-01-01

This paper presents a method of thermal balancing for monolithic power integrated circuits (ICs). An on-chip temperature monitoring sensor that consists of a poly resistor strip in each of multiple parallel MOSFET banks is developed. A temperature-to-frequency converter (TFC) is proposed to quantize on-chip temperature. A pulse-width-modulation (PWM) methodology is developed to balance the channel temperature based on the quantization. The modulated PWM pulses control the hottest of metal-oxide-semiconductor field-effect transistor (MOSFET) bank to reduce its power dissipation and heat generation. A test chip with eight parallel MOSFET banks is fabricated in TSMC 0.25 μm HV BCD processes, and total area is 900 × 914 μm2. The maximal temperature variation among the eight banks can reduce to 2.8 °C by the proposed thermal balancing system from 9.5 °C with 1.5 W dissipation. As a result, our proposed system improves the lifetime of a power MOSFET by 20%. PMID:28617346

Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

NASA Astrophysics Data System (ADS)

Swami, Yashu; Rai, Sanjeev

2017-02-01

The high leakage current in nano-meter regimes is becoming a significant portion of power dissipation in nano-MOSFET circuits as threshold voltage, channel length, and gate oxide thickness are scaled down to nano-meter range. Precise leakage current valuation and meticulous modeling of the same at nano-meter technology scale is an increasingly a critical work in designing the low power nano-MOSFET circuits. We present a specific compact model for sub-threshold regime leakage current in bulk driven nano-MOSFETs. The proposed logical model is instigated and executed into the latest updated PTM bulk nano-MOSFET model and is found to be in decent accord with technology-CAD simulation data. This paper also reviews various transistor intrinsic leakage mechanisms for nano-MOSFET exclusively in weak inversion, like drain-induced barricade lowering (DIBL), gate-induced drain leakage (GIDL), gate oxide tunneling (GOT) leakage etc. The root cause of the sub-surface leakage current is mainly due to the nano-scale short channel length causing source-drain coupling even in sub-threshold domain. Consequences leading to carriers triumphing the barricade between the source and drain. The enhanced model effectively considers the following parameter dependence in the account for better-quality value-added results like drain-to-source bias (VDS), gate-to-source bias (VGS), channel length (LG), source/drain junction depth (Xj), bulk doping concentration (NBULK), and operating temperature (Top).

Al-implanted on-axis 4H-SiC MOSFETs

NASA Astrophysics Data System (ADS)

Florentin, M.; Cabello, M.; Rebollo, J.; Montserrat, J.; Brosselard, P.; Henry, A.; Godignon, P.

2017-03-01

In this paper, the impact of temperature and time stress on gate oxide stability of several multi-implanted and epitaxied 4H-SiC nMOSFET is presented. The oxide layer was processed under a rapid thermal process (RTP) furnace. The variation of the main electrical parameters is shown. We report the high quality and stability of such implanted MOSFETs, and point out the very low roughness effect of the on-axis-cut sample. Particularly, in the best case, effective channel mobility (μ fe) overcomes 20 cm2.V-1.s-1 at 300 °C for a channel length of 12 μm, which is very encouraging for implantation technology. Starting from 200 °C, the apparent increase of the μ fe peak of the MOSFET ceases and tends to saturate with further temperature increase. This is an indication of the potential of MOSFETs built on on-axis substrates. Thus, starting from the real case of an implanted MOSFET, the global purpose is to show that the electrical performance of such an on-axis-built device can tend to reach that of the ideal case, i.e. epitaxied MOSFET, and even overcome its electrical limitation, e.g. in terms of threshold voltage stability at high temperature.

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

NASA Technical Reports Server (NTRS)

Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

2011-01-01

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

Observations of Single Event Failure in Power MOSFETS

NASA Technical Reports Server (NTRS)

Nichols, D.; McCarty, K.; Coss, J.

1994-01-01

The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

NASA Astrophysics Data System (ADS)

Xin, Wan; Weisong, Zhou; Daoguang, Liu; Hanliang, Bo; Jun, Xu

2015-05-01

It was demonstrated that heavy ions can induce large current—voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

2018-03-01

This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

NASA Astrophysics Data System (ADS)

Sasaki, Taro; Endoh, Tetsuo

2018-04-01

In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T–1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD. For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

Submicron Silicon MOSFET

NASA Technical Reports Server (NTRS)

Daud, T.

1986-01-01

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

Excimer laser annealing for low-voltage power MOSFET

NASA Astrophysics Data System (ADS)

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

2016-08-01

Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

A multi-channel isolated power supply in non-equipotential circuit

NASA Astrophysics Data System (ADS)

Li, Xiang; Zhao, Bo-Wen; Zhang, Yan-Chi; Xie, Da

2018-04-01

A multi-channel isolation power supply is designed for the problems of different MOSFET or IGBT in the non-equipotential circuit in this paper. It mainly includes the square wave generation circuit, the high-frequency transformer and the three-terminal stabilized circuit. The first part is used to generate the 24V square wave, and as the input of the magnetic ring transformer. In the second part, the magnetic ring transformer consists of one input and three outputs to realize multi-channel isolation output. The third part can output different potential and realize non-equal potential function through the three-terminal stabilized chip. In addition, the multi-channel isolation power source proposed in this paper is Small size, high reliability and low price, and it is convenient for power electronic switches that operate on multiple different potentials. Therefore, the research on power supply of power electronic circuit has practical significance.

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

NASA Astrophysics Data System (ADS)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

Analyzing Single-Event Gate Ruptures In Power MOSFET's

NASA Technical Reports Server (NTRS)

Zoutendyk, John A.

1993-01-01

Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

Power-MOSFET Voltage Regulator

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2011-01-01

susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.;

Analysis and modeling of flicker noise in lateral asymmetric channel MOSFETs

NASA Astrophysics Data System (ADS)

Agarwal, Harshit; Kushwaha, Pragya; Gupta, Chetan; Khandelwal, Sourabh; Hu, Chenming; Chauhan, Yogesh Singh

2016-01-01

In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise model in MOSFETs, underestimates flicker noise in such devices. The same KP method overestimates thermal noise by 2-3 orders of magnitude in similar devices as demonstrated in Roy et al. (2007). This apparent discrepancy between thermal and flicker noise behavior lies in origin of these noises, which leads to opposite trend of local noise power spectral density vs doping. We have modeled the physics behind such behavior, which also explain the trends observed in the measurements (Agarwal et al., 2015).

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

A physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor.

PubMed

Rahman, Ehsanur; Shadman, Abir; Ahmed, Imtiaz; Khan, Saeed Uz Zaman; Khosru, Quazi D M

2018-06-08

In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift-diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer WSe 2 FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer WSe 2 FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer MoS 2 channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.

A physically based compact I–V model for monolayer TMDC channel MOSFET and DMFET biosensor

NASA Astrophysics Data System (ADS)

Rahman, Ehsanur; Shadman, Abir; Ahmed, Imtiaz; Zaman Khan, Saeed Uz; Khosru, Quazi D. M.

2018-06-01

In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson’s equation for the inversion charge density to get the electrostatic potential in the channel. Current is then calculated by solving the drift–diffusion equation. The model makes gradual channel approximation to simplify the solution procedure. The appropriate density of states obtained from the first principle density functional theory simulation has been considered to keep the model physically accurate for monolayer TMDC channel FET. The outcome of the model has been benchmarked against both experimental and numerical quantum simulation results with the help of a few fitting parameters. Using the compact model, detailed output and transfer characteristics of monolayer WSe2 FET have been studied, and various performance parameters have been determined. The study confirms excellent ON and OFF state performances of monolayer WSe2 FET which could be viable for the next generation high-speed, low power applications. Also, the proposed model has been extended to study the operation of a biosensor. A monolayer MoS2 channel based dielectric modulated FET is investigated using the compact model for detection of a biomolecule in a dry environment.

Design, production, and testing of field effect transistors. [cryogenic MOSFETS

NASA Technical Reports Server (NTRS)

Sclar, N.

1982-01-01

Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

NASA Astrophysics Data System (ADS)

Greene, Andrew M.

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1

Study on Frequency Dependency of ON-Resistance and Pulse-Loss Calculation of MOSFETs for Switch Mode Power Supply

NASA Astrophysics Data System (ADS)

Yamamura, Hideho; Sato, Ryohei; Iwata, Yoshiharu

Global efforts toward energy conservation, increasing data centers, and the increasing use of IT equipments are leading to a demand in reduced power consumption of equipments, and power efficiency improvement of power supply units is becoming a necessity. MOSFETs are widely used for their low ON-resistances. Power efficiency is designed using time-domain circuit simulators, except for transformer copper-loss, which has frequency dependency which is calculated separately using methods based on skin and proximity effects. As semiconductor technology reduces the ON-resistance of MOSFETs, frequency dependency due to the skin effect or proximity effect is anticipated. In this study, ON-resistance of MOSFETs are measured and frequency dependency is confirmed. Power loss against rectangular current pulse is calculated. The calculation method for transformer copper-loss is expanded to MOSFETs. A frequency function for the resistance model is newly developed and parametric calculation is enabled. Acceleration of calculation is enabled by eliminating summation terms. Using this method, it is shown that the frequency dependent component of the measured MOSFETs increases the dissipation from 11% to 32% at a switching frequency of 100kHz. From above, this paper points out the importance of the frequency dependency of MOSFETs' ON-resistance, provides means of calculating its pulse losses, and improves loss calculation accuracy of SMPSs.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

NASA Astrophysics Data System (ADS)

Graziosi, Patrizio; Neophytou, Neophytos

2018-02-01

Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors: three Heusler-type alloys (Mn2CoAl, CrVZrAl, and CoVZrAl) and one from the oxide family (NiFe2O4). We describe their band structures by using data from DFT (Density Functional Theory) calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well.

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

Burnout sensitivity of power MOSFETs operating in a switching converter

NASA Astrophysics Data System (ADS)

Tastet, P.; Garnier, J.; Constans, H.; Tizon, A. H.

1994-06-01

Heavy ion tests of a switching converter using power MOSFETs have allowed us to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper.

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

NASA Astrophysics Data System (ADS)

Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

2017-12-01

In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

NASA Astrophysics Data System (ADS)

Yang, Xiaolei; Tao, Yonghong; Yang, Tongtong; Huang, Runhua; Song, Bai

2018-03-01

Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

1999-01-01

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Power MOSFET Thermal Instability Operation Characterization Support

NASA Technical Reports Server (NTRS)

Shue, John L.; Leidecker, Henning

2010-01-01

Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

PubMed Central

Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

2016-01-01

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

Prognostics Approach for Power MOSFET Under Thermal-Stress

NASA Technical Reports Server (NTRS)

Galvan, Jose Ramon Celaya; Saxena, Abhinav; Kulkarni, Chetan S.; Saha, Sankalita; Goebel, Kai

2012-01-01

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Liu, Sandra; Titus, Jeffrey L.; McMorrow, Dale; Casey, Megan C.; Buchner, Stephen P.; Warner, Jeffrey; Phan, Anthony M.; Topper, Alyson D.; Kim, Hak S.;

How small can MOSFETs get?

NASA Astrophysics Data System (ADS)

Risch, Lothar

2001-10-01

Scaling of CMOS technology made possible the key appliances of our information technology society, like the PC, mobile communication, and the internet. Reduction of feature sizes for semiconductor devices continued according to Moore's law for the last 25 years in order to achieve higher integration densities, higher speed, lower power consumption, and lower costs. But now, as we approach the sub 100 nm regime, several roadblocks have been predicted for the next generations down to 35 nm. The latest ITRS roadmap 99 describes in detail the challenges which have to be addressed for the future CMOS technology nodes, regarding lithography, metallization, power dissipation, and circuit design. Also for the MOSFET, performance degradation is a big issue. Because this is not a limitation from basic physical laws, novel architectures for MOSFETs will be needed to improve again the electrical characteristics and thus pave the way to much smaller transistors than expected in the past. 25 nm CMOS seems to be feasible using very thin silicon substrates on insulator. Further improvements down to 10 nm are very likely with two gates for the control of the charge carriers. So, it is very likely that CMOS will not end with today's roadmap at 35 nm or even before, but may continue with non bulk devices and fully depleted channels. Finally, tunnelling from source to drain will set an end to the reduction of channel length, which is estimated to be below 5 nm.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

PubMed

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

PubMed Central

2012-01-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials. PMID:22853458

Extraction method of interfacial injected charges for SiC power MOSFETs

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Li, Sheng; Song, Haiyang; Chen, Xin; Li, Ting; Fang, Jiong; Sun, Weifeng

2018-01-01

An improved novel extraction method which can characterize the injected charges along the gate oxide interface for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. According to the different interface situations of the channel region and the junction FET (JFET) region, the gate capacitance versus gate voltage (Cg-Vg) curve of the device can be divided into three relatively independent parts, through which the locations and the types of the charges injected in to the oxide above the interface can be distinguished. Moreover, the densities of these charges can also be calculated by the amplitudes of the shifts in the Cg-Vg curve. The correctness of this method is proved by TCAD simulations. Moreover, experiments on devices stressed by unclamped-inductive-switching (UIS) stress and negative bias temperature stress (NBTS) are performed to verify the validity of this method.

Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement

NASA Astrophysics Data System (ADS)

Trivedi, Nitin; Kumar, Manoj; Haldar, Subhasis; Deswal, S. S.; Gupta, Mridula; Gupta, R. S.

2017-09-01

A charge plasma technique based dopingless (DL) accumulation mode (AM) junctionless (JL) cylindrical surrounding gate (CSG) MOSFET has been proposed and extensively investigated. Proposed device has no physical junction at source to channel and channel to drain interface. The complete silicon pillar has been considered as undoped. The high free electron density or induced N+ region is designed by keeping the work function of source/drain metal contacts lower than the work function of undoped silicon. Thus, its fabrication complexity is drastically reduced by curbing the requirement of high temperature doping techniques. The electrical/analog characteristics for the proposed device has been extensively investigated using the numerical simulation and are compared with conventional junctionless cylindrical surrounding gate (JL-CSG) MOSFET with identical dimensions. For the numerical simulation purpose ATLAS-3D device simulator is used. The results show that the proposed device is more short channel immune to conventional JL-CSG MOSFET and suitable for faster switching applications due to higher I ON/ I OFF ratio.

Performance of a 100V Half-Bridge MOSFET Driver, Type MIC4103, Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2011-01-01

The operation of a high frequency, high voltage MOSFET (metal-oxide semiconductor field-effect transistors) driver was investigated over a wide temperature regime that extended beyond its specified range. The Micrel MIC4103 is a 100V, non-inverting, dual driver that is designed to independently drive both high-side and low-side N-channel MOSFETs. It features fast propagation delay times and can drive 1000 pF load with 10ns rise times and 6 ns fall times [1]. The device consumes very little power, has supply under-voltage protection, and is rated for a -40 C to +125 C junction temperature range. The floating high-side driver of the chip can sustain boost voltages up to 100 V. Table I shows some of the device manufacturer s specification.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

NASA Astrophysics Data System (ADS)

Tripathi, Shweta

2016-10-01

In the present work, a two-dimensional (2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS™ device simulator to affirm and formalize the proposed device structure.

Towards Accelerated Aging Methodologies and Health Management of Power MOSFETs (Technical Brief)

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Patil, Nishad; Saha, Sankalita; Wysocki, Phil; Goebel, Kai

2009-01-01

Understanding aging mechanisms of electronic components is of extreme importance in the aerospace domain where they are part of numerous critical subsystems including avionics. In particular, power MOSFETs are of special interest as they are involved in high voltage switching circuits such as drivers for electrical motors. With increased use of electronics in aircraft control, it becomes more important to understand the degradation of these components in aircraft specific environments. In this paper, we present an accelerated aging methodology for power MOSFETs that subject the devices to indirect thermal overstress during high voltage switching. During this accelerated aging process, two major modes of failure were observed - latch-up and die attach degradation. In this paper we present the details of our aging methodology along with details of experiments and analysis of the results.

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

NASA Astrophysics Data System (ADS)

Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

2014-08-01

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhuo, Qing-Qing; Liu, Hong-Xia; Ma, Xiao-Hua; Hao, Yue

2014-05-01

The effect of the static negative bias temperature (NBT) stress on a p-channel power metal—oxide—semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction—diffusion (R—D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R—D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

PubMed

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

PubMed Central

2012-01-01

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits

DTIC Science & Technology

2009-12-17

MOSFET is limited by the thermal voltage kBT/q; it is greater than or equal to 60mV/dec at room temperature. Fig. 1.4 The potential barrier for...60mV/dec can be explained by the electron energy band profile of a MOSFET, which is shown in Fig. 1.4. As Vgs increases, the channel potential is...channel potential (φs) reduces the potential barrier for electron injection, and hence the electron energy (E) increases. According to the Boltzmann

Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivity

NASA Technical Reports Server (NTRS)

Stassinopoulos, E. G.; Brucker, G. J.; Calvel, P.; Baiget, A.; Peyrotte, C.; Gaillard, R.

1992-01-01

The transport, energy loss, and charge production of heavy ions in the sensitive regions of IRF 150 power MOSFETs are described. The dependence and variation of transport parameters with ion type and energy relative to the requirements for single event burnout in this part type are discussed. Test data taken with this power MOSFET are used together with analyses by means of a computer code of the ion energy loss and charge production in the device to establish criteria for burnout and parameters for space predictions. These parameters are then used in an application to predict burnout rates in a geostationary orbit for power converters operating in a dynamic mode. Comparisons of rates for different geometries in simulating SEU (single event upset) sensitive volumes are presented.

Investigations into the Power MOSFET SEGR Phenomenon and its Physical Mechanism

NASA Technical Reports Server (NTRS)

Swift, G. M.; Edmonds, L. E.; Miyahira, T.; Nichols, D. K.; Johnston, A. H.

1997-01-01

The state of understanding of the destructive SEGR event in power MOSFETs is relatively mature with large published efforts, both experimental and theoretical. However, gasps remain in the uderstanding of the phenomenon, including unexplained anomalies, emperical-only dependencies on some important device and incident ion physical parameters, and limited insight into latent effets.

Technologies for suppressing charge-traps in novel p-channel Field-MOSFET with thick gate oxide

NASA Astrophysics Data System (ADS)

Miyoshi, Tomoyuki; Oshima, Takayuki; Noguchi, Junji

2015-05-01

High voltage laterally diffused MOS (LDMOS) FETs are widely used in analog applications. A Field-MOSFET with a thick gate oxide is one of the best ways of achieving a simpler design and smaller circuit footprint for high-voltage analog circuits. This paper focuses on an approach to improving the reliability of p-channel Field-MOSFETs. By introducing a fluorine implantation process and terminating fluorine at the LOCOS bird’s beak, the gate oxide breakdown voltage could be raised to 350 V at a high-slew rate and the negative bias temperature instability (NBTI) shift could be kept to within 15% over a product’s lifetime. By controlling the amount of charge in the insulating layer through improving the interlayer dielectric (ILD) deposition processes, a higher BVDSS of 370 V and 10-year tolerability of 300 V were obtained with an assisted reduced surface electric field (RESURF) effect. These techniques can supply an efficient solution for ensuring reliable high-performance applications.

Study of the dose rate effect of 180 nm nMOSFETs

NASA Astrophysics Data System (ADS)

He, Bao-Ping; Yao, Zhi-Bin; Sheng, Jiang-Kun; Wang, Zu-Jun; Huang, Shao-Yan; Liu, Min-Bo; Xiao, Zhi-Gang

2015-01-01

Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A “true” dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

An Integrated Gate Driver in 4H-SiC for Power Converter Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, Milton Nance; Frank, Steven Shane; Britton, Charles

2014-01-01

A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including risemore » and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.« less

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

PubMed

Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

2013-03-25

n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

Liquid helium-cooled MOSFET preamplifier for use with astronomical bolometer

NASA Technical Reports Server (NTRS)

Goebel, J. H.

1977-01-01

A liquid helium-cooled p-channel enhancement mode MOSFET, the 3N167, is found to have sufficiently low noise for use as a preamplifier with helium-cooled bolometers that are used in infrared astronomy. Its characteristics at 300, 77, and 4.2 K are presented. It is also shown to have useful application with certain photoconductive and photovoltaic infrared detectors.

Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer.

PubMed

Takulapalli, Bharath R

2010-02-23

Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.

First observation of proton induced power MOSFET burnout in space: the CRUX experiment on APEX

NASA Astrophysics Data System (ADS)

Adolphsen, J. W.; Barth, J. L.; Gee, G. B.

1996-12-01

Ground testing has shown that power MOSFETs are susceptible to burnout when irradiated with heavy ions and protons. Satellite data from the Cosmic Ray Upset Experiment (CRUX) demonstrate that single event burnouts (SEBs) on 100-volt and 200-volt power MOSFETs can and do occur in space. Few SEBs occurred on the 100-volt devices, all at L/sup 1/>3. The 200-volt devices experienced many SEBs at L<3 when drain-to-source voltage (V/sub D-S/) was greater than 85% of maximum rated voltage. CRUX flight lot devices were ground tested with protons. The SEB rates calculated with the cross-sections from the ground tests show close agreement with the measured rates.

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

NASA Astrophysics Data System (ADS)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

A CMOS matrix for extracting MOSFET parameters before and after irradiation

NASA Technical Reports Server (NTRS)

Blaes, B. R.; Buehler, M. G.; Lin, Y.-S.; Hicks, K. A.

1988-01-01

An addressable matrix of 16 n- and 16 p-MOSFETs was designed to extract the dc MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs, each with four different geometries that can be biased independently. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Co-60 irradiation results for the n-MOSFETs showed a threshold-voltage shift of -3 mV/krad(Si), whereas the p-MOSFETs showed a shift of 21 mV/krad(Si). The worst-case threshold-voltage shift occurred for the n-MOSFETs, with a gate bias of 5 V during the anneal. For the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5 V on the gate during irradiation. Co-60 test results for other parameters are also presented.

Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2011-01-01

Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

NASA Technical Reports Server (NTRS)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

2017-01-01

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

III-V/Ge MOS device technologies for low power integrated systems

NASA Astrophysics Data System (ADS)

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

2016-11-01

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

First observations of power MOSFET burnout with high energy neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oberg, D.L.; Wert, J.L.; Normand, E.

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage {ge}400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

First observations of power MOSFET burnout with high energy neutrons

NASA Astrophysics Data System (ADS)

Oberg, D. L.; Wert, J. L.; Normand, E.; Majewski, P. P.; Wender, S. A.

1996-12-01

Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage /spl ges/400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Kink effect in ultrathin FDSOI MOSFETs

NASA Astrophysics Data System (ADS)

Park, H. J.; Bawedin, M.; Choi, H. G.; Cristoloveanu, S.

2018-05-01

Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (<10 nm) and/or very short transistors (L < 50 nm), the kink is totally absent as a consequence of super-coupling effect. For the first time, thanks to the availability of body contacts, the body potential is probed to evidence the impact of majority carrier accumulation and drain pulse duration on the kink effect onset. He is currently working toward the Ph.D. degree in FDSOI device characterization and simulation at a laboratory of IMEP-lahc, Université Grenoble Alpes, Minatec, Grenoble, France. His research interests include residual floating body effects, electrical characterization, and device simulation for ultra FDSOI MOSFETs.

Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saxena, Abhinav; Saha, Sankalita; Goebel, Kai F.

2011-01-01

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.

RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

NASA Astrophysics Data System (ADS)

Martin, Maria J.; Pascual, Elena; Rengel, Raúl

2012-07-01

This paper presents a detailed study of the RF and noise performance of n-type Schottky barrier (SB) MOSFETs with a particular focus on the influence of the Schottky barrier height (SBH) on the main dynamic and noise figures of merit. With this aim, a 2D Monte Carlo simulator including tunnelling transport across Schottky interfaces has been developed, with special care to consider quantum transmission coefficients and the influence of image charge effects at the Schottky junctions. Particular attention is paid to the microscopic transport features, including carrier mean free paths or number of scattering events along the channel for investigating the optimization of the device topology and the strategic concepts related to the noise performance of this new architecture. A more effective control of the gate electrode over drain current for low SBH (discussed in terms of internal physical quantities) is translated into an enhanced transconductance gm, cut-off frequency fT, and non-quasistatic dynamic parameters. The drain and gate intrinsic noise sources show a noteworthy degradation with the SBH reduction due to the increased current, influence of hot carriers and reduced number of phonon scatterings. However, the results evidence that this effect is counterbalanced by the extremely improved dynamic performance in terms of gm and fT. Therefore, the deterioration of the intrinsic noise performance of the SB-MOSFET has no significant impact on high-frequency noise FoMs as NFmin, Rn and Gass for low SBH and large gate overdrive conditions. The role of the SBH on Γopt, optimum noise reactance and susceptance has been also analyzed.

Lightning Pin Injection Testing on MOSFETS

NASA Technical Reports Server (NTRS)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Moore, B. T.

1985-01-01

The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60 nm CMOS technology on 300 mm wafer process

NASA Astrophysics Data System (ADS)

Imamoto, Takuya; Ma, Yitao; Muraguchi, Masakazu; Endoh, Tetsuo

2015-04-01

In this paper, DC and low-frequency noise (LFN) characteristics have been investigated with actual measurement data in both n- and p-type vertical MOSFETs (V-MOSFETs) for the first time. The V-MOSFETs which was fabricated on 300 mm bulk silicon wafer process have realized excellent DC performance and a significant reduction of flicker (1/f) noise. The measurement results show that the fabricated V-MOSFETs with 60 nm silicon pillar and 100 nm gate length achieve excellent steep sub-threshold swing (69 mV/decade for n-type and 66 mV/decade for p-type), good on-current (281 µA/µm for n-type 149 µA/µm for p-type), low off-leakage current (28.1 pA/µm for n-type and 79.6 pA/µm for p-type), and excellent on-off ratio (1 × 107 for n-type and 2 × 106 for p-type). In addition, it is demonstrated that our fabricated V-MOSFETs can control the threshold voltage (Vth) by changing the channel doping condition, which is the useful and low-cost technique as it has been widely used in the conventional bulk planar MOSFET. This result indicates that V-MOSFETs can control Vth more finely and flexibly by the combined the use of the doping technique with other techniques such as work function engineering of metal-gate. Moreover, it is also shown that V-MOSFETs can suppress 1/f noise (L\\text{gate}WS\\text{Id}/I\\text{d}2 of 10-13-10-11 µm2/Hz for n-type and 10-12-10-10 µm2/Hz for p-type) to one or two order lower level than previously reported nanowire type MOSFET, FinFET, Tri-Gate, and planar MOSFETs. The results have also proved that both DC and 1/f noise performances are independent from the bias voltage which is applied to substrate or well layer. Therefore, it is verified that V-MOSFETs can eliminate the effects from substrate or well layer, which always adversely affects the circuit performances due to this serial connection.

An Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS

DTIC Science & Technology

2010-05-07

submarine or small surface combatant, volumetric constraints quickly become extremely prohibitive. Dedicating generators for high power loads takes...thermal compounds were applied to the MOSFET-heat sink interface. For the Si APT26F120B2, MG Chemicals TC-450ML thermal epoxy was used to connect the... submarines , bus converter modules must be made optimally power dense in order to decrease volumetric requirements of the modules for a rated throughput

Determination of the p-spray profile for n+ p silicon sensors using a MOSFET

NASA Astrophysics Data System (ADS)

Fretwurst, E.; Garutti, E.; Klanner, R.; Kopsalis, I.; Schwandt, J.; Weberpals, M.

2017-09-01

The standard technique to electrically isolate the n+ implants of segmented silicon sensors fabricated on high-ohmic p-type silicon are p+-implants. Although the knowledge of the p+-implant dose and of the doping profile is highly relevant for the understanding and optimisation of sensors, this information is usually not available from the vendors, and methods to obtain it are highly welcome. The paper presents methods to obtain this information from circular MOSFETs fabricated as test structures on the same wafer as the sensors. Two circular MOSFETs, one with and one without a p+-implant under the gate, are used for this study. They were produced on Magnetic Czochralski silicon doped with ≈ 3 . 5 × 1012cm-2 of boron and 〈 100 〉 crystal orientation. The drain-source current as function of gate voltage for different back-side voltages is measured at a drain-source voltage of 50 mV in the linear MOSFET region, and the values of threshold voltage and mobility extracted using the standard MOSFET formulae. To determine the bulk doping, the implantation dose and profile from the data, two methods are used, which give compatible results. The doping profile, which varies between 3 . 5 × 1012cm-3 and 2 × 1015cm-3 for the MOSFET with p+-implant, is determined down to a distance of a fraction of a μm from the Si-SiO2 interface. The method of extracting the doping profiles is verified using data from a TCAD simulation of the two MOSFETs. The details of the methods and of the problems encountered are discussed.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, J. M.; Ladbury, R. L.; Batchelor, D. A.; Goldsman, N.; Kim, H. S.; Phan, A. M.

2010-01-01

A Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun

2018-06-01

We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border traps and exposed surface properties in normally-off Al2O3/GaN MOSFET. The inductively coupled plasma (ICP) dry etching gate recess with large damage presents a rough and active surface that is prone to form detrimental GaxO validated by atomic force microscopy and X-ray photoelectron spectroscopy. Lower drain current noise spectral density of the 1/f form and less dispersive ac transconductance are observed in GaN MOSFETs fabricated with oxygen assisted wet etching compared with devices based on ICP dry etching. One decade lower density of border traps is extracted in devices with wet etching according to the carrier number fluctuation model, which is consistent with the result from the ac transconductance method. Both methods show that the density of border traps is skewed towards the interface, indicating that GaxO is of higher trap density than the bulk gate oxide. GaxO located close to the interface is the major location of border traps. The damage-free oxidation assisted wet etching gate recess technique presents a relatively smooth and stable surface, resulting in lower border trap density, which would lead to better MOS channel quality and improved device reliability.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

PubMed

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2016-10-01

The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

NASA Astrophysics Data System (ADS)

Seixas, L. E., Jr.; Finco, S.; Silveira, M. A. G.; Medina, N. H.; Gimenez, S. P.

2017-01-01

This paper describes an experimental comparative study of proton ionizing radiation effects between the metal-oxide-semiconductor (MOS) Field Effect Transistors (MOSFETs) implemented with hexagonal gate shapes (diamond) and their respective counterparts designed with the classical rectangular ones, regarding the same gate areas, channel widths and geometrical ratios (W/L). The devices were manufactured by using the 350 nm bulk complementary MOS (CMOS) integrated circuits technology. The diamond MOSFET with α angles higher or equal to 90° tends to present a smaller vulnerability to the high doses ionizing radiation than those observed in the typical rectangular MOSFET counterparts.

Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

NASA Astrophysics Data System (ADS)

Baykan, Mehmet Onur

Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

NASA Astrophysics Data System (ADS)

Yasutake, Nobuaki; Azuma, Atsushi; Ishida, Tatsuya; Ohuchi, Kazuya; Aoki, Nobutoshi; Kusunoki, Naoki; Mori, Shinji; Mizushima, Ichiro; Morooka, Tetsu; Kawanaka, Shigeru; Toyoshima, Yoshiaki

2007-11-01

A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 μA/μm at ∣ Vdd∣ of 0.9 V and Ioff of 100 nA/μm (552 μA/μm at ∣ Vdd∣ of 1.0 V). Furthermore, by combining with Vdd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation.

Charge-based MOSFET model based on the Hermite interpolation polynomial

NASA Astrophysics Data System (ADS)

Colalongo, Luigi; Richelli, Anna; Kovacs, Zsolt

2017-04-01

An accurate charge-based compact MOSFET model is developed using the third order Hermite interpolation polynomial to approximate the relation between surface potential and inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced charge-based compact MOSFET models such as BSIM, ACM and EKV, but it is developed without requiring the crude linearization of the inversion charge. Hence, the asymmetry and the non-linearity in the channel are accurately accounted for. Nevertheless, the expression of the drain current can be worked out to be analytically equivalent to BSIM, ACM and EKV. Furthermore, thanks to this new mathematical approach the slope factor is rigorously defined in all regions of operation and no empirical assumption is required.

Wide-Bandgap MOSFET Research with Virginia Tech Graduate Students |

Science.gov Websites

Advanced Manufacturing Research | NREL Wide Bandgap MOSFET Research with Virginia Tech Wide -Bandgap MOSFET Research with Virginia Tech Graduate Students Along with graduate student fellows from Virginia Tech, NREL is researching aspects related to the reliability and prognostics of power electronic

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

88 kilowatt automotive inverter with new 900 Volt silicon carbide MOSFET technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casady, Jeffrey; Olejniczak, Kraig; McNutt, Ty

This final report is on the design and experimental verification of a 200 kVA traction inverter using three 900 V, 2.5 mΩ, SiC MOSFET-based half-bridge power modules comprising the power stage. Each dual power module contains four 900 V, 10 mΩ SiC MOSFETs per switch position and uses synchronous conduction to achieve high average and peak efficiencies over its entire operating region to meet the demands of hybrid, plug-in hybrid, and extended-range electrified vehicle architectures. Significant performance improvement, via conduction, switching, and reverse-recovery loss metrics, from this SiC MOSFET-based inverter—especially at light load conditions—will be discussed.

Junctionless tri-gate InGaAs MOSFETs

NASA Astrophysics Data System (ADS)

Zota, Cezar B.; Borg, Mattias; Wernersson, Lars-Erik; Lind, Erik

2017-12-01

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 × 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 × 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mS/µm and I ON = 160 µA/µm (at I OFF = 100 nA/µm and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.

Accurate analytical modeling of junctionless DG-MOSFET by green's function approach

NASA Astrophysics Data System (ADS)

Nandi, Ashutosh; Pandey, Nilesh

2017-11-01

An accurate analytical model of Junctionless double gate MOSFET (JL-DG-MOSFET) in the subthreshold regime of operation is developed in this work using green's function approach. The approach considers 2-D mixed boundary conditions and multi-zone techniques to provide an exact analytical solution to 2-D Poisson's equation. The Fourier coefficients are calculated correctly to derive the potential equations that are further used to model the channel current and subthreshold slope of the device. The threshold voltage roll-off is computed from parallel shifts of Ids-Vgs curves between the long channel and short-channel devices. It is observed that the green's function approach of solving 2-D Poisson's equation in both oxide and silicon region can accurately predict channel potential, subthreshold current (Isub), threshold voltage (Vt) roll-off and subthreshold slope (SS) of both long & short channel devices designed with different doping concentrations and higher as well as lower tsi/tox ratio. All the analytical model results are verified through comparisons with TCAD Sentaurus simulation results. It is observed that the model matches quite well with TCAD device simulations.

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

NASA Astrophysics Data System (ADS)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p-channel

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

PubMed Central

Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

2015-01-01

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2004-01-01

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.

PubMed

Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan

2017-08-15

Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

NASA Astrophysics Data System (ADS)

Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

2015-04-01

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

SiC MOSFET Switching Power Amplifier Project Summary

NASA Astrophysics Data System (ADS)

Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

2017-10-01

Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

Improving Current Balance In Parallel MOSFET's

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1992-01-01

Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

NASA Technical Reports Server (NTRS)

Celaya, Jose R.; Saxena, Abhinav; Wysocki, Philip; Saha, Sankalita; Goebel, Kai

2010-01-01

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Saving Moore’s Law Down To 1 nm Channels With Anisotropic Effective Mass

NASA Astrophysics Data System (ADS)

Ilatikhameneh, Hesameddin; Ameen, Tarek; Novakovic, Bozidar; Tan, Yaohua; Klimeck, Gerhard; Rahman, Rajib

2016-08-01

Scaling transistors’ dimensions has been the thrust for the semiconductor industry in the last four decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design. Here, we show that by using channel materials with an anisotropic effective mass, the channel can be scaled down to 1 nm and still provide an excellent switching performance in phosphorene nanoribbon MOSFETs. To solve power consumption challenge besides dimension scaling in conventional transistors, a novel tunnel transistor is proposed which takes advantage of anisotropic mass in both ON- and OFF-state of the operation. Full-band atomistic quantum transport simulations of phosphorene nanoribbon MOSFETs and TFETs based on the new design have been performed as a proof.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Goldsman, Neil; Liu, Sandra; Titus, Jeffrey L.; Ladbury, Raymond L.; Kim, Hak S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, Max; Sherman, Phillip

2012-01-01

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application.

PubMed

Chatterjee, Prasenjit; Chow, Hwang-Cherng; Feng, Wu-Shiung

2016-08-30

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal loop which generates the on-chip magnetic field. The proposed device designed is much smaller in size with respect to the metal loop, which ensures that the generated magnetic field is approximately uniform. The change of drain current and change of bulk current per micron device width has been measured. The result shows that the difference drain current is about 145 µA for the maximum applied magnetic field. Such changes occur from the applied Lorentz force to push out the carriers from the channel. Based on the drain current difference, the change in effective mobility has been detected up to 4.227%. Furthermore, a detailed investigation reveals that the device behavior is quite different in subthreshold and saturation region. A change of 50.24 µA bulk current has also been measured. Finally, the device has been verified for use as a magnetic sensor with sensitivity 4.084% (29.6 T(-1)), which is very effective as compared to other previously reported works for a single device.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Liu, Jingqian; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang

2018-03-01

Based on the self-terminating gate recess technique, two different processes featuring gate-recess-first (GF) and ohmic-contact-first (OF) were proposed for E-mode Al2O3/GaN MOSFETs. Increased maximum drain current (Idmax) ∼30% (420 vs 325 mA/mm), field-effect mobility (μFEmax) ∼67% (150 vs 90 cm2/Vs) and reduced on-state resistance (Ron) ∼42% (9.7 vs 16.8 Ω·mm) were observed in the devices fabricated by GF process. Such significant performance difference of GF- and OF-devices resulted from the presence of border traps at Al2O3/GaN interface with a time constant ∼7 × 10-6 s. Experimental results indicated that: (1) the near interface border traps in Al2O3 dielectric significantly affect device channel mobility; (2) a high temperature post-deposition annealing process could effective suppress generation of border traps.

An EKV-based high voltage MOSFET model with improved mobility and drift model

NASA Astrophysics Data System (ADS)

Chauhan, Yogesh Singh; Gillon, Renaud; Bakeroot, Benoit; Krummenacher, Francois; Declercq, Michel; Ionescu, Adrian Mihai

2007-11-01

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270-3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11-12):1801-13] especially in the quasi-saturation region of output characteristics.

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

NASA Technical Reports Server (NTRS)

Pellish, J. A.; Boutte, A.; Kim, H.; Phan, A.; Topper, A.

2016-01-01

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk Bi

Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.; Saini, Subhash

2000-01-01

In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

Characterization and Fabrication of High k dielectric-High Mobility Channel Transistors

NASA Astrophysics Data System (ADS)

Sun, Xiao

As the conventional scaling of Si-based MOSFETs would bring negligible or even negative merits for IC's beyond the 7-nm CMOS technology node, many perceive the use of high-mobility channels to be one of the most likely principle changes, in order to achieve higher performance and lower power. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, InGaAs, GaSb, GaN...) to replace Si CMOS technology. In this thesis, the distinct properties of the traps in the high-k dielectric/high-mobility substrate system is discussed, as well as the challenges to characterize and passivate them. By modifying certain conventional gate admittance methods, both the fast and slow traps in Ge MOS gate stacks is investigated. In addition, a novel ac-transconductance method originated at Yale is introduced and demonstrated with several advanced transistors provided by collaborating groups, such as ultra-thin-body & box SO1 MOSFETs (CEA-LETI), InGaAs MOSFETs (IMEC, UT Austin, Purdue), and GaN MOS-HEMT (MIT). By use of the aforementioned characterization techniques, several effective passivation techniques on high mobility substrates (Ge, InGaAs, GaSb, GeSn, etc.) are evaluated, including a novel Ba sub-monolayer passivation of Ge surface. The key factors that need to be considered in passivating high mobility substrates are revealed. The techniques that we have established for characterizing traps in advanced field-effect transistors, as well as the knowledge gained about these traps by the use of these techniques, have been applied to the study of ionizing radiation effects in high-mobility-channel transistors, because it is very important to understand such effects as these devices are likely to be exposed to radiation-harsh environments, such as in outer space, nuclear plants, and during X-ray or UHV lithography. In this thesis, the total ionizing dose (TD) radiation effects of InGaAs-based MOSFETs and GaN-based MOS-HEMT are

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side formore » power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.« less

Introduction of performance boosters like Ge as channel material for the future of CMOS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samia, Slimani, E-mail: slimani.samia@gmail.com; Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida; Bouaza, Djellouli, E-mail: djelbou@hotmail.fr

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumventmore » the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.« less

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

NASA Technical Reports Server (NTRS)

Gruber, Robert P.; Gott, Robert W.

1991-01-01

In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

PubMed

Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

2012-07-01

In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

NASA Technical Reports Server (NTRS)

Gummin, Mark A.

2011-01-01

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Low-Power and High-Speed Technique for logic Gates in 20nm Double-Gate FinFET Technology

NASA Astrophysics Data System (ADS)

Priydarshi, A.; Chattopadhyay, M. K.

2016-10-01

The FinFET is the leading example of multigate MOSFETS to substitute conventional single gate MOSFETs for ultimate scaling [1], The FinFET structure is a combination of a thin channel region and a double gate to suppress the short channel effects (SCEs) and Vthvariation [2], By using FinFET,figure of merits viz, ION, IOFF, output resistance, propagation delay, noise margin and leakage power, can be improved for ultra low power and high performance applications[3]. In this paper, a new high speed low power dynamic circuit design technique has been proposed using 20nm FinFETs. By applying the appropriate clock and sleep signal to the back gates of the FinFETs, the proposed circuit can efficiently control the dynamic power, During the pre-charging period, Vth of PMOS is controlled low so that a fast precharging can occur;

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

PubMed Central

Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang

2012-01-01

A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor. PMID:22778646

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiuchi, Kenji; et al.

We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/Al xO y/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature ofmore » 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.« less

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

NASA Astrophysics Data System (ADS)

Leach, J. H.; Wu, M.; Morkoç, H.; Liberis, J.; Šermukšnis, E.; Ramonas, M.; Matulionis, A.

2011-11-01

A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total charge in the channel (the electron sheet density) but rather the electron density profile. This is demonstrated by comparing two structures with equal sheet densities (1 × 1013 cm-2), but with different density profiles. The camelback channel profile exhibits a shorter hot-phonon lifetime of ˜270 fs as compared with ˜500 fs reported for a standard Al0.33Ga0.67N/AlN/GaN channel at low supplied power levels. When supplied power is sufficient to heat the electrons > 600 K, ultrafast decay of hot phonons is observed in the case of the composite channel structure. In this case, the electron density profile spreads to form a camelback profile, and hot-phonon lifetime reduces to ˜50 fs.

2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

NASA Astrophysics Data System (ADS)

Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

2018-02-01

This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

NASA Astrophysics Data System (ADS)

Yoshioka, Hironori; Hirata, Kazuto

2018-04-01

The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14-350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm-2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V-1s-1 and was almost independent of temperature.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

PubMed

Burchhart, T; Zeiner, C; Hyun, Y J; Lugstein, A; Hochleitner, G; Bertagnolli, E

2010-10-29

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

Monte carlo study of MOSFET packaging, optimised for improved energy response: single MOSFET filtration.

PubMed

Othman, M A R; Cutajar, D L; Hardcastle, N; Guatelli, S; Rosenfeld, A B

2010-09-01

Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (D(w)(0.07)) and 10 mm (D(w)(10)) in a water equivalent phantom of size 30 x 30 x 30 cm(3) for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within + or - 60 % for photon energies 0.06-2 MeV for both D(w)(0.07) and D(w)(10). Variations in the response for photon energies of 15-60 keV were 200 and 330 % for D(w)(0.07) and D(w)(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700 % over-response when used in free-air geometry.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

MOSFET's for Cryogenic Amplifiers

NASA Technical Reports Server (NTRS)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen

1998-01-01

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia.

PubMed

Mattar, Essam H; Hammad, Lina F; Al-Mohammed, Huda I

2011-07-01

Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. The measurements involved 32 patient's (16 males, 16 females), aged between 14-30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment.

Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia

PubMed Central

Mattar, Essam H.; Hammad, Lina F.; Al-Mohammed, Huda I.

2011-01-01

Summary Background Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. Material/Methods The measurements involved 32 patient’s (16 males, 16 females), aged between 14–30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. Results The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. Conclusions The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment. PMID:21709641

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

NASA Technical Reports Server (NTRS)

Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

1999-01-01

We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

MOSFET detectors in quality assurance of tomotherapy treatments.

PubMed

Cherpak, Amanda; Studinski, Ryan C N; Cygler, Joanna E

2008-02-01

The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6 MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs

Recent advances of high voltage AlGaN/GaN power HFETs

NASA Astrophysics Data System (ADS)

Uemoto, Yasuhiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi; Ueda, Daisuke

2009-02-01

We review our recent advances of GaN-based high voltage power transistors. These are promising owing to low on-state resistance and high breakdown voltage taking advantages of superior material properties. However, there still remain a couple of technical issues to be solved for the GaN devices to replace the existing Si-based power devices. The most critical issue is to achieve normally-off operation which is strongly desired for the safety operation, however, it has been very difficult because of the built-in polarization electric field. Our new device called GIT (Gate Injection Transistor) utilizing conductivity modulation successfully achieves the normally-off operation keeping low on-state resistance. The fabricated GIT on a Si substrate exhibits threshold voltage of +1.0V. The obtained on-state resistance and off-state breakdown voltage were 2.6mΩ•cm2 and 800V, respectively. Remaining technical issue is to further increase the breakdown voltage. So far, the reported highest off-state breakdown voltage of AlGaN/GaN HFETs has been 1900V. Overcoming these issues by a novel device structure, we have demonstrated the world highest breakdown voltages of 10400V using thick poly-crystalline AlN as a passivation film and Via-holes through sapphire which enable very efficient layout of the lateral HFET array avoiding any undesired breakdown of passivation films. Since conventional wet or dry etching cannot be used for chemically stable sapphire, high power pulsed laser is used to form the via-holes. The presented GaN power devices demonstrate that GaN is advantageous for high voltage power switching applications replacing currently used Si-based power MOSFETs and IGBTs.

Paralleling power MOSFETs in their active region: Extended range of passively forced current sharing

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1989-01-01

A simple passive circuit that improves current balance in parallelled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive are exhibited. A nonlinear circuit consisting of diodes and resistors generates the differential gate potential required to correct for unbalance while maintaining low losses over a range of current. Also application of a thin tape wound magnetic core to effect dynamic current balance is reviewed, and a simple theory is presented showing that for operation in the active region the branch currents tend to revert to their normal unbalanced values even if the core is not driven into saturation. Results of several comparative experiments are given.

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

PubMed

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Direct protein detection with a nano-interdigitated array gate MOSFET.

PubMed

Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

2009-08-15

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing

DTIC Science & Technology

2015-02-15

currently valid OMB control number . PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 20-04-2015 2. REPORT TYPE...of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing 5a. CONTRACT NUMBER FA2386-11-1-4077 5b. GRANT NUMBER Grant AOARD...114077 5c. PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Prof. Robert Wallace 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Rafferty, Conor S.; Yu, Zhiping; Dutton, Robert W.; Ancona, Mario G.; Saini, Subhash (Technical Monitor)

1998-01-01

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

A new safety channel based on ¹⁷N detection in research reactors.

PubMed

Seyfi, Somayye; Gharib, Morteza

2015-10-01

Tehran research reactor (TRR) is a representative of pool type research reactors using light water, as coolant and moderator. This reactor is chosen as a prototype to demonstrate and prove the feasibility of (17)N detection as a new redundant channel for reactor power measurement. In TRR, similar to other pool type reactors, neutron detectors are immersed in the pool around the core as the main power measuring devices. In the present article, a different approach, using out of water neutron detector, is employed to measure reactor power. This new method is based on (17)O (n,p) (17)N reaction taking place inside the core and subsequent measurement of delayed neutrons emitted due to (17)N disintegration. Count and measurement of neutrons around outlet water pipe provides a reliable redundant safety channel to measure reactor power. Results compared with other established channels indicate a good agreement and shows a linear interdependency with true thermal power. Safety of reactor operation is improved with installation & use of this new power measuring channel. The new approach may equally serve well as a redundant channel in all other types of reactors having coolant comprised of oxygen in its molecular constituents. Contrary to existing channels, this one is totally out of water and thus is an advantage over current instrumentations. It is proposed to employ the same idea on other reactors (nuclear power plants too) to improve safety criteria. Copyright © 2015 Elsevier Ltd. All rights reserved.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

NASA Astrophysics Data System (ADS)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Hung, Ting-Hsiang; Akyol, Fatih

2014-12-29

We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed two-dimensional (2D) simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the 2D electron gas mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the samemore » operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors.« less

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

NASA Astrophysics Data System (ADS)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

Medium-energy heavy-ion single-event-burnout imaging of power MOSFETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musseau, O.; Torres, A.; Campbell, A.B.

The authors present the first experimental determination of the SEB sensitive area in a power MOSFET irradiated with a high-LET heavy-ion microbeam. They used a spectroscopy technique to perform coincident measurements of the charge collected in both source and drain junctions together, with a non-destructive technique (current limitation). The resulting charge collection images are related to the physical structure of the individual cells. These experimental data reveal the complex 3-dimensional behavior of a real structure, which can not easily be simulated using available tools. As the drain voltage is increased, the onset of burnout is reached, characterized by a suddenmore » change in the charge collection image. Hot spots are observed where the collected charge reaches its maximum value. Those spots, due to burnout triggering events, correspond to areas where the silicon is degraded through thermal effects along a single ion track. This direct observation of SEB sensitive areas as applications for, either device hardening, by modifying doping profiles or layout of the cells, or for code calibration and device simulation.« less

Medium-energy heavy-ion single-event-burnout imaging of power MOSFETs

NASA Astrophysics Data System (ADS)

Musseau, O.; Torres, A.; Campbell, A. B.; Knudson, A. R.; Buchner, S.; Fischer, B.; Schlogl, M.; Briand, P.

1999-12-01

We present the first experimental determination of the SEB sensitive area in a power MOSFET irradiated with a high-LET heavy-ion microbeam. We used a spectroscopy technique to perform coincident measurements of the charge collected in both source and drain junctions together, with a nondestructive technique (current limitation). The resulting charge collection images are related to the physical structure of the individual cells. These experimental data reveal the complex 3-dimensional behavior of a real structure, which can not easily be simulated using available tools. As the drain voltage is increased, the onset of burnout is reached, characterized by a sudden change in the charge collection image. "Hot spots" are observed where the collected charge reaches its maximum value. Those spots, due to burnout triggering events, correspond to areas where the silicon is degraded through thermal effects along a single ion track. This direct observation of SEB sensitive areas as applications for, either device hardening, by modifying doping profiles or layout of the cells, or for code calibration and device simulation.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams.

PubMed

Manigandan, D; Bharanidharan, G; Aruna, P; Devan, K; Elangovan, D; Patil, Vikram; Tamilarasan, R; Vasanthan, S; Ganesan, S

2009-09-01

The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured with a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23-40 degrees C. The energy dependence of a MOSFET dosimeter was within +/-3.0% for 6-18MeV electron beams and 5.5% for 4MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4-18MeV.

Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

NASA Astrophysics Data System (ADS)

Hu, Ai-Bin; Xu, Qiu-Xia

2010-05-01

Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride (HfSiON) gate dielectric and tantalum nitride (TaN) metal gate are fabricated. Self-isolated ring-type transistor structures with two masks are employed. W/TaN metal stacks are used as gate electrode and shadow masks of source/drain implantation separately. Capacitance-voltage curve hysteresis of Ge metal-oxide-semiconductor (MOS) capacitors may be caused by charge trapping centres in GeO2 (1 < x < 2). Effective hole mobilities of Ge and Si transistors are extracted by using a channel conductance method. The peak hole mobilities of Si and Ge transistors are 33.4 cm2/(V · s) and 81.0 cm2/(V · s), respectively. Ge transistor has a hole mobility 2.4 times higher than that of Si control sample.

Impact of source height on the characteristic of U-shaped channel tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

2017-11-01

Tunnel field-effect transistor (TFET) is very attractive in replacing a MOSFET, particularly for low-power nanoelectronic circuits. The U-shaped channel TFET (U-TFET) was proposed to improve the drain-source current with a reduced footprint. In this work, the impact of the source height (HS) on the characteristic of the U-shaped channel tunnel field-effect transistor (U-TFET) is investigated by using TCAD simulation. It is found that with a fixed gate height (HG) the drain-source current has a negative correlation with HS. This is because when the gate region is deeper than the source region, the electric field near the corner of the tunneling junction can be enhanced and the tunneling rate is increased. When HS becomes very thin, the drain-source current is limited by the source region volume. The U-TFET with an n+ pocket is also studied and the same trend is observed.

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Regenerative switching CMOS system

DOEpatents

Welch, James D.

1998-01-01

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Regenerative switching CMOS system

DOEpatents

Welch, J.D.

1998-06-02

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

NASA Astrophysics Data System (ADS)

Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan

2016-04-01

Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

2D Quantum Simulation of MOSFET Using the Non Equilibrium Green's Function Method

NASA Technical Reports Server (NTRS)

Svizhenko, Alexel; Anantram, M. P.; Govindan, T. R.; Yan, Jerry (Technical Monitor)

2000-01-01

The objectives this viewgraph presentation summarizes include: (1) the development of a quantum mechanical simulator for ultra short channel MOSFET simulation, including theory, physical approximations, and computer code; (2) explore physics that is not accessible by semiclassical methods; (3) benchmarking of semiclassical and classical methods; and (4) study other two-dimensional devices and molecular structure, from discretized Hamiltonian to tight-binding Hamiltonian.

Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com; Banerjee, L.; Sengupta, A.

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction,more » by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.« less

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, N; Frank, S; Britton, C

2014-02-01

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into anmore » isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.« less

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations

NASA Astrophysics Data System (ADS)

Hosenfeld, Fabian; Horst, Fabian; Iñíguez, Benjamín; Lime, François; Kloes, Alexander

2017-11-01

Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained more importance specially for compact model developers. The non-equilibrium Green's function (NEGF) has become a state-of-the-art method for nano-scaled device simulation in the past years. In the sense of a multi-scale simulation approach it is necessary to bridge the gap between compact models with their fast and efficient calculation of the device current, and numerical device models which consider quantum effects of nano-scaled devices. In this work, an NEGF based analytical model for nano-scaled double-gate (DG) MOSFETs is introduced. The model consists of a closed-form potential solution of a classical compact model and a 1D NEGF formalism for calculating the device current, taking into account quantum mechanical effects. The potential calculation omits the iterative coupling and allows the straightforward current calculation. The model is based on a ballistic NEGF approach whereby backscattering effects are considered as second order effect in a closed-form. The accuracy and scalability of the non-iterative DG MOSFET model is inspected in comparison with numerical NanoMOS TCAD data for various channel lengths. With the help of this model investigations on short-channel and temperature effects are performed.

First principles investigation of SiC/AlGaN(0001) band offset

NASA Astrophysics Data System (ADS)

Kojima, E.; Endo, K.; Shirakawa, H.; Chokawa, K.; Araidai, M.; Ebihara, Y.; Kanemura, T.; Onda, S.; Shiraishi, K.

2017-06-01

We are attempting to develop a new type of vertical MOSFET with SiC/AlGaN heterojunction. Toward the realization of the vertical MOSFET, the control of conduction-band offset is one of the crucial subjects. We investigated the conduction-band offset of 4H-SiC/AlxGa1-xN interface by the first-principles electronic structure calculations. We found that the offset of the interface with 40% Al content becomes almost zero. Therefore, 4H-SiC/Al0.4Ga0.6N interface is one of the most promising candidates for the vertical MOSFET in future power conversion devices.

Dosimetry investigation of MOSFET for clinical IMRT dose verification.

PubMed

Deshpande, Sudesh; Kumar, Rajesh; Ghadi, Yogesh; Neharu, R M; Kannan, V

2013-06-01

In IMRT, patient-specific dose verification is followed regularly at each centre. Simple and efficient dosimetry techniques play a very important role in routine clinical dosimetry QA. The MOSFET dosimeter offers several advantages over the conventional dosimeters such as its small detector size, immediate readout, immediate reuse, multiple point dose measurements. To use the MOSFET as routine clinical dosimetry system for pre-treatment dose verification in IMRT, a comprehensive set of experiments has been conducted, to investigate its linearity, reproducibility, dose rate effect and angular dependence for 6 MV x-ray beam. The MOSFETs shows a linear response with linearity coefficient of 0.992 for a dose range of 35 cGy to 427 cGy. The reproducibility of the MOSFET was measured by irradiating the MOSFET for ten consecutive irradiations in the dose range of 35 cGy to 427 cGy. The measured reproducibility of MOSFET was found to be within 4% up to 70 cGy and within 1.4% above 70 cGy. The dose rate effect on the MOSFET was investigated in the dose rate range 100 MU/min to 600 MU/min. The response of the MOSFET varies from -1.7% to 2.1%. The angular responses of the MOSFETs were measured at 10 degrees intervals from 90 to 270 degrees in an anticlockwise direction and normalized at gantry angle zero and it was found to be in the range of 0.98 ± 0.014 to 1.01 ± 0.014. The MOSFETs were calibrated in a phantom which was later used for IMRT verification. The measured calibration coefficients were found to be 1 mV/cGy and 2.995 mV/cGy in standard and high sensitivity mode respectively. The MOSFETs were used for pre-treatment dose verification in IMRT. Nine dosimeters were used for each patient to measure the dose in different plane. The average variation between calculated and measured dose at any location was within 3%. Dose verification using MOSFET and IMRT phantom was found to quick and efficient and well suited for a busy radiotherapy

Monolithic integration of a MOSFET with a MEMS device

DOEpatents

Bennett, Reid; Draper, Bruce

2003-01-01

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Design and performance study of a DC-DC flyback converter based on wide bandgap power devices for photovoltaic applications

NASA Astrophysics Data System (ADS)

Alharbi, Salah S.; Alharbi, Saleh S.; Al-bayati, Ali M. S.; Matin, Mohammad

2017-08-01

This paper presents a high-performance dc-dc flyback converter design based on wide bandgap (WBG) semiconductor devices for photovoltaic (PV) applications. Two different power devices, a gallium nitride (GaN)-transistor and a silicon (Si)-MOSFET, are implemented individually in the flyback converter to examine their impact on converter performance. The total power loss of the converter with different power devices is analyzed for various switching frequencies. Converter efficiency is evaluated at different switching frequencies, input voltages, and output power levels. The results reveal that the converter with the GaN-transistor has lower total power loss and better efficiency compared to the converter with the conventional Si-MOSFET.

Small field electron beam dosimetry using MOSFET detector

PubMed Central

Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K.

2010-01-01

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth‐dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high‐sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm× 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also performed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ±1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam. PACS number: 87.55.Qr

Small field electron beam dosimetry using MOSFET detector.

PubMed

Amin, Md Nurul; Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K

2010-10-04

The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth-dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high-sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm × 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also per-formed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ± 1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Experimental evaluation of a MOSFET dosimeter for proton dose measurements.

PubMed

Kohno, Ryosuke; Nishio, Teiji; Miyagishi, Tomoko; Hirano, Eriko; Hotta, Kenji; Kawashima, Mitsuhiko; Ogino, Takashi

2006-12-07

The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, which acts as a point dosimeter, and also its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never been used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton beams. We experimentally evaluated dose reproducibility, linearity, fading effect, beam intensity dependence and angular dependence for the proton beam. Furthermore, the Bragg curve and spread-out Bragg peak were also measured and the linear-energy transfer (LET) dependence of the MOSFET response was investigated. Many characteristics of the MOSFET response for proton beams were the same as those for photon beams reported in previous papers. However, the angular MOSFET responses at 45, 90, 135, 225, 270 and 315 degrees for proton beams were over-responses of about 15%, and moreover the MOSFET response depended strongly on the LET of the proton beam. This study showed that the angular dependence and LET dependence of the MOSFET response must be considered very carefully for quantitative proton dose evaluations.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Image guided IMRT dosimetry using anatomy specific MOSFET configurations.

PubMed

Amin, Md Nurul; Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

2008-06-23

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within -0.26 +/- 0.88% and 0.06 +/- 1.94% (1 sigma) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X-Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47 +/- 2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans.

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Ladbury, Ray; Goldsman, Neil; Kim, Hak; Batchelor, David; Phan, Anthony

2010-01-01

Single-event gate rupture (SEGR) is a potentially catastrophic failure mechanism of power MOSFETs biased in the off-state. In part due to the severity of-SEGR consequences and in part due to the difficulty of accurated SEGR rate estimation, SEGR mitigation me1hodologies emphasize risk avoidance, using heavy-ion accelerator testing to define safe operating conditions for a surface-incident linear energy transfer {LET). This "safe-operating area" (SOA) within which the device may be biased without experiencing SEGR is then often derated by a prescribed factor to ensure low risk of SEGR. Although research in 1996 indicated that such LET-based SEGR hardness requiremen1s could provide false assurance of safe operation unless one also considered· ion energy], most mission SEGR requirements are still specified in terms of surface-incident LET. Moreover, terrestrial SEGR tests at a given surface-incident LET are limited by the small number of ion species and energies available at heavy-ion accelerators. In comparison, the on-orbit radiation environment is composed of all of the naturally-occurring elements with peak fluxes at nearly GeV/nucleon energies. The primary objective of this study is to examine whether typical derating of high-energy heavy-ion accelerator test data bounds the risk for SEGR from higher-energy on-orbit ions with the mission LET requirement.

The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

NASA Technical Reports Server (NTRS)

Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

1999-01-01

In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

Image guided IMRT dosimetry using anatomy specific MOSFET configurations

PubMed Central

Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

2008-01-01

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobileMOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within −0.26±0.88% and 0.06±1.94% (1σ) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X‐Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47±2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans. PACS number: 87.55.Qr

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

InP MOS capacitor and E-mode n-channel FET with ALD Al2O3-based high- k dielectric

NASA Astrophysics Data System (ADS)

Yen, Chih-Feng; Yeh, Min-Yen; Chong, Kwok-Keung; Hsu, Chun-Fa; Lee, Ming-Kwei

2016-07-01

The electrical characteristics of atomic-layer-deposited Al2O3/TiO2/Al2O3 on (NH4)2S-treated InP MOS capacitor and related MOSFET were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4)2S treatment. The high bandgap Al2O3 on TiO2 can reduce the thermionic emission, and the Al2O3 under TiO2 improves the interface-state density by self-cleaning. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness. The leakage currents can reach 2.3 × 10-8 and 2.2 × 10-7 A/cm2 at ±2 MV/cm, respectively. The lowest interface-state density is 4.6 × 1011 cm-2 eV-1 with a low-frequency dispersion of 15 %. The fabricated enhancement-mode n-channel sulfur-treated InP MOSFET exhibits good electrical characteristics with a maximum transconductance of 146 mS/mm and effective mobility of 1760 cm2/V s. The subthreshold swing and threshold voltage are 117 mV/decade and 0.44 V, respectively.

Dynamics of Cohering and Decohering Power under Markovian Channels

NASA Astrophysics Data System (ADS)

Chen, Ming-Ming; Luo, Yu; Shao, Lian-He; Li, Yong-Ming

2017-11-01

In this paper, we investigate the cohering and decohering power of the one-qubit Markovian channels with respect to coherence measures based on the l 1-norm, the Rényi α-relative entropy and the Tsallis α-relative entropy of coherence, respectively. The amplitude damping channel, phase damping channel, depolarizing channel, and flip channels are analytically calculated. It shows that the decohering power of the amplitude damping channel on the x,y , and z basis is equal to each other. The same phenomenon can be seen for the phase damping channel and the flip channels. The cohering power for the phase damping channel and the flip channels on the x,y basis also equals to that on the z basis. However, the cohering and decohering power of the depolarizing channel is independent to the reference basises. And the cohering power of the amplitude damping channel on the x,y basis is different to that on the z basis. Supported by the National Natural Science Foundation of China under Grant Nos. 11271237, 11671244, the Higher School Doctoral Subject Foundation of Ministry of Education of China under Grant No. 20130202110001, and Fundamental Research Funds for the Central Universities under Grants Nos. 2016TS060 and 2016CBY003

Calibration of a mosfet detection system for 6-MV in vivo dosimetry.

PubMed

Scalchi, P; Francescon, P

1998-03-01

Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 x 5 to 30 x 30 cm2. In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0 degrees to 90 degrees, the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom irradiation is in agreement with TLD

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

NASA Astrophysics Data System (ADS)

Talbo, V.; Mateos, J.; González, T.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Vasallo, B. G.

2015-10-01

Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I- MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.

Quantum Mechanical Modeling of Ballistic MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan (Technical Monitor)

2001-01-01

The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

CMOS-compatible batch processing of monolayer MoS2 MOSFETs

NASA Astrophysics Data System (ADS)

Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

2018-04-01

Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers.

PubMed

Choi, Hojong; Shung, K Kirk

2014-06-12

The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer's sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems.The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers

Characterization of responses and comparison of calibration factor for commercial MOSFET detectors.

PubMed

Bharanidharan, Ganesan; Manigandan, Durai; Devan, Krishnamurthy; Subramani, Vellaiyan; Gopishankar, Natanasabapathi; Ganesh, Tharmar; Joshi, Rakeshchander; Rath, Gourakishore; Velmurugan, Jagadeesan; Aruna, Prakasarao; Ganesan, Singaravelu

2005-01-01

A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value>0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

NASA Technical Reports Server (NTRS)

Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

1991-01-01

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

PubMed Central

Wolff, Jan E.; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-01-01

The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50–90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point‐dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k=2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low‐dose limit. The sensitivity was 3.09±0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was −8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD‐comparable low‐dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However

Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms.

PubMed

Koivisto, Juha H; Wolff, Jan E; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

2015-07-08

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50-90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point-dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low-dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was -8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD-comparable low-dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in

Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET

NASA Astrophysics Data System (ADS)

Tahhan, Maher Bishara

Gallium Nitride has seen much interest in the field of electronics due to its large bandgap and high mobility. In the field of power electronics, this combination leads to a low on-resistance for a given breakdown voltage. To take full advantage of this, vertical conduction transistors in GaN can give high breakdown voltages independent of chip area, leading to transistors with nominally low on resistance with high breakdown at a low cost. Acknowledging this, a vertical transistor design is presented with a small footprint area. This design utilizes a fin structure as a double gated insulated MESFET with electrons flowing from the top of the fin downward. The transistor's characteristics and design is initially explored via simulation and modelling. In this modelling, it is found that the narrow dimension of the fin must be sub-micron to allow for the device to be turned off with no leakage current and have a positive threshold voltage. Several process modules are developed and integrated to fabricate the device. A smooth vertical etch leaving low damage to the surfaces is demonstrated and characterized, preventing micromasking during the GaN dry etch. Methods of removing damage from the dry etch are tested, including regrowth and wet etching. Several hard masks were developed to be used in conjunction with this GaN etch for various requirements of the process, such as material constraints and self-aligning a metal contact. Multiple techniques are tested to deposit and pattern the gate oxide and metal to ensure good contact with the channel without causing unwanted shorts. To achieve small fin dimensions, a self-aligned transistor process flow is presented allowing for smaller critical dimensions at increased fabrication tolerances by avoiding the use of lithographic steps that require alignments to very high accuracy. In the case of the device design presented, the fins are lithographically defined at the limit of i-line stepper system. From this single

Optimizing the wireless power transfer over MIMO Channels

NASA Astrophysics Data System (ADS)

Wiedmann, Karsten; Weber, Tobias

2017-09-01

In this paper, the optimization of the power transfer over wireless channels having multiple-inputs and multiple-outputs (MIMO) is studied. Therefore, the transmitter, the receiver and the MIMO channel are modeled as multiports. The power transfer efficiency is described by a Rayleigh quotient, which is a function of the channel's scattering parameters and the incident waves from both transmitter and receiver side. This way, the power transfer efficiency can be maximized analytically by solving a generalized eigenvalue problem, which is deduced from the Rayleigh quotient. As a result, the maximum power transfer efficiency achievable over a given MIMO channel is obtained. This maximum can be used as a performance bound in order to benchmark wireless power transfer systems. Furthermore, the optimal operating point which achieves this maximum will be obtained. The optimal operating point will be described by the complex amplitudes of the optimal incident and reflected waves of the MIMO channel. This supports the design of the optimal transmitter and receiver multiports. The proposed method applies for arbitrary MIMO channels, taking transmitter-side and/or receiver-side cross-couplings in both near- and farfield scenarios into consideration. Special cases are briefly discussed in this paper in order to illustrate the method.

Radiation damage in MOS integrated circuits, Part 1

NASA Technical Reports Server (NTRS)

Danchenko, V.

1971-01-01

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

PubMed

Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

2008-01-01

Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

Relationship between effective mobility and border traps associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Min; Kim, Dae-Hyun; Kim, Tae-Woo

2018-03-01

The effective mobility and reliability characteristics of In0.7Ga0.3As quantum-well (QW) MOSFETs with various high-κ gate stacks and HEMTs with a Schottky gate under bias temperature instability (BTI) stress were investigated. The effective mobilities (μeff) of HEMTs, single-layer Al2O3, bilayer Al2O3 (0.6 nm)/HfO2 (2.0 nm), and Al2O3 (0.6 nm)/HfO2 (3.0 nm) were ˜9000, ˜6158, ˜4789, and ˜4447 cm2 V-1 s-1 at N inv = 1.5 × 1012/cm2, respectively. The maximum effective mobility of In0.7Ga0.3As channel MOSFETs was compared with that of In0.7Ga0.3As/In0.48Al0.52As HEMTs, which are interface and border trap-free FETs. The results showed that the effective channel mobility was sensitive to traps in high-κ dielectrics related to interface trap density and border traps in the oxide. The ΔV T degradation of the bilayer Al2O3/HfO2 under BTI stress was greater than that of a single Al2O3 layer because the HfO2 layer had a high density of oxygen vacancies which were related to border traps.

Characteristics and performance of a micro-MOSFET: an "imageable" dosimeter for image-guided radiotherapy.

PubMed

Rowbottoma, Carl G; Jaffray, David A

2004-03-01

The performance and characteristics of a miniature metal oxide semiconductor field effect transistor (micro-MOSFET) detector was investigated for its potential application to integral system tests for image-guided radiotherapy. In particular, the position of peak response to a slit of radiation was determined for the three principal axes to define the co-ordinates for the center of the active volume of the detector. This was compared to the radiographically determined center of the micro-MOSFET visible using cone-beam CT. Additionally, the angular sensitivity of the micro-MOSFET was measured. The micro-MOSFETs are clearly visible on the cone-beam CT images, and produce no artifacts. The center of the active volume of the micro-MOSFET aligned with the center of the visible micro-MOSFET on the cone-beam CT images for the x and y axes to within 0.20 mm and 0.15 mm, respectively. In z, the long axis of the detector, the peak response was found to be 0.79 mm from the tip of the visible micro-MOSFET. Repeat experiments verified that the position of the peak response of the micro-MOSFET was reproducible. The micro-MOSFET response for 360 degrees of rotation in the axial plane to the micro-MOSFET was +/-2%, consistent with values quoted by the manufacturer. The location of the active volume of the micro-MOSFETs under investigation can be determined from the centroid of the visible micro-MOSFET on cone-beam CT images. The CT centroid position corresponds closely to the center of the detector response to radiation. The ability to use the cone-beam CT to locate the active volume to within 0.20 mm allows their use in an integral system test for the imaging of and dose delivery to a phantom containing an array of micro-MOSFETs. The small angular sensitivity allows the investigation of noncoplanar beams.

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity.

PubMed

Kohno, Ryosuke; Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

2012-03-08

When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve for a mono-energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMC(MOSFET)). The SMC(MOSFET) output value at an arbitrary point was compared with the value obtained by the conventional SMC(PPIC), which calculates proton dose distributions by using the depth-dose curve determined by a parallel-plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMC(PPIC) results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector.

Energy dependence corrections to MOSFET dosimetric sensitivity.

PubMed

Cheung, T; Butson, M J; Yu, P K N

2009-03-01

Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

PubMed

Sung, Guo-Ming; Lin, Wen-Sheng; Wang, Hsing-Kuang

2017-01-10

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The differential polysilicon CSHP enabled the magnetic device to not only increase the magnetosensitivity but also eliminate the offset voltage generated because of device mismatch and Lorentz force. Two MOSFETs generated two drain currents with a quadratic function of the differential Hall voltages at CSHP. A readout circuit-composed of a current-to-voltage converter, a low-pass filter, and a difference amplifier-was designed to amplify the current difference between two drains of MOSFETs. Measurements revealed that the electrostatic discharge (ESD) could be eliminated from the distance sensor by grounding it to earth; however, the sensor could be desensitized by ESD in the absence of grounding. The magnetic influence can be ignored if the magnetic body (human) stays far from the magnetic sensor, and the measuring system is grounded to earth by using the ESD wrist strap (Strap E-GND). Both 'no grounding' and 'grounding to power supply' conditions were unsuitable for measuring the induced Hall voltage.

Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers

PubMed Central

2014-01-01

Background The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. Methods The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. Results We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60 MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of

33 CFR 162.30 - Channel of Tuckerton Creek, N.J.; navigation.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Channel of Tuckerton Creek, N.J.; navigation. 162.30 Section 162.30 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND... Tuckerton Creek, N.J.; navigation. (a) Power boats or other vessels propelled by machinery shall not proceed...

Dual drain MOSFET detector for crosstie memory systems

NASA Astrophysics Data System (ADS)

Bluzer, N.

1985-03-01

This patent application, which discloses a circuit for detecting binary information in crosstie memory systems includes a dual drain MOSFET device having a single channel with a common source and an integrated, thin-film strip of magnetic material suitable for the storage and propagation of Bloch line-crosstie pairs acting as both a shift register and the device's gate. Current flowing through the device, in the absence of a magnetic field, is equally distributed to each drain; however, changing magnetic fields, normal to the plane of the device and generated by Bloch line-crosstie pairs in the strip, interact with the current such that a distribution imbalance exists and one drain or the other receives a disproportionate fraction of the current depending upon the direction of the magnetic field.

SU-E-T-749: Thorough Calibration of MOSFET Dosimeters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plenkovich, D; Thomas, J

Purpose: To improve the accuracy of the MOSFET calibration procedure by performing the measurement several times and calculating the average value of the calibration factor for various photon and electron energies. Methods: The output of three photon and six electron beams of Varian Trilogy linear accelerator SN 5878 was calibrated. Five reinforced standard sensitivity MOSFET dosimeters were placed in the calibration jig and connected to the Reader Module. As the backscatter material was used 7 cm of Virtual Water. The MOSFET dosimeters were covered with 1.5 cm thick bolus for the regular and SRS 6 MV beams, 3 cm bolusmore » for 15 MV beam, 1.5 cm bolus for 6 MeV electron beam, and 2 cm bolus for the electron energies of 9, 12, 15, 18, and 22 MeV. The dosimeters were exposed to 100 MU, and the calibration factor was determined using the mobileMOSFET software. To improve the accuracy of calibration, this procedure was repeated ten times and the calibration factors were averaged. Results: As the number of calibrations was increasing the variability of calibration factors of different dosimeters was decreasing. After ten calibrations, the calibration factors for all five dosimeters were within 1% of one another for all energies, except 6 MV SRS photons and 6 MeV electrons, for which the variability was 2%. Conclusions: The described process results in calibration factors which are almost independent of modality or energy. Once calibrated, the dosimeters may be used for in-vivo dosimetry or for daily verification of the beam output. Measurement of the radiation dose under bolus and scatter to the eye are examples of frequent use of calibrated MOSFET dosimeters. The calibration factor determined for full build-up is used under these circumstances. To the best of our knowledge, such thorough procedure for calibrating MOSFET dosimeters has not been reported previously. Best Medical Canada provided MOSFET dosimeters for this project.« less

Universal MOSFET parameter analyzer

NASA Astrophysics Data System (ADS)

Klekachev, A. V.; Kuznetsov, S. N.; Pikulev, V. B.; Gurtov, V. A.

2006-05-01

MOSFET analyzer is developed to extract most important parameters of transistors. Instead of routine DC transfer and output characteristics, analyzer provides an evaluation of interface states density by applying charge pumping technique. There are two features that outperform the analyzer among similar products of other vendors. It is compact (100 × 80 × 50 mm 3 in dimensions) and lightweight (< 200 gram) instrument with ultra low power supply (< 2.5 W). The analyzer operates under control of IBM PC by means of USB interface that simultaneously provides power supply. Owing to the USB-compatible microcontroller as the basic element, designed analyzer offers cost-effective solution for diverse applications. The enclosed software runs under Windows 98/2000/XP operating systems, it has convenient graphical interface simplifying measurements for untrained user. Operational characteristics of analyzer are as follows: gate and drain output voltage within limits of +/-10V measuring current range of 1pA ÷ 10 mA; lowest limit of interface states density characterization of ~10 9 cm -2 • eV -1. The instrument was designed on the base of component parts from CYPRESS and ANALOG DEVICES (USA).

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M.

2013-11-11

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reducedmore » channel thermal conductivity must be considered.« less

Signal Processing for Wireless Communication MIMO System with Nano- Scaled CSDG MOSFET based DP4T RF Switch.

PubMed

Srivastava, Viranjay M

2015-01-01

In the present technological expansion, the radio frequency integrated circuits in the wireless communication technologies became useful because of the replacement of increasing number of functions, traditional hardware components by modern digital signal processing. The carrier frequencies used for communication systems, now a day, shifted toward the microwave regime. The signal processing for the multiple inputs multiple output wireless communication system using the Metal- Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has been done a lot. In this research the signal processing with help of nano-scaled Cylindrical Surrounding Double Gate (CSDG) MOSFET by means of Double- Pole Four-Throw Radio-Frequency (DP4T RF) switch, in terms of Insertion loss, Isolation, Reverse isolation and Inter modulation have been analyzed. In addition to this a channel model has been presented. Here, we also discussed some patents relevant to the topic.

A new radiotherapy surface dose detector:the MOSFET.

PubMed

Butson, M J; Rozenfeld, A; Mathur, J N; Carolan, M; Wong, T P; Metcalfe, P E

1996-05-01

Radiotherapy x-ray and electron beam surface doses are accurately measurable by use of a MOS-FET detector system. The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is approximately 200-microns in diameter and consists of a 0.5-microns Al electrode on top of a 1-microns SiO2 and 300-microns Si substrate. Results for % surface dose were within +/- 2% compared to the Attix chamber and within +/- 3% of TLD extrapolation results for normally incident beams. Detectors were compared using different energies, field size, and beam modifying devices such as block trays and wedges. Percentage surface dose for 10 x 10-cm and 40 x 40-cm field size for 6-MV x rays at 100-cm SSD using the MOSFET were 16% and 42% of maximum, respectively. Factors such as its small size, immediate retrieval of results, high accuracy attainable from low applied doses, and as the MOSFET records its dose history make it a suitable in vivo dosimeter where surface and skin doses need to be determined. This can be achieved within part of the first fraction of dose (i.e., only 10 cGy is required.)

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

PubMed

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.

PubMed

Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young

2005-04-15

A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.

Phosphorylation of rat brain purified mitochondrial Voltage-Dependent Anion Channel by c-Jun N-terminal kinase-3 modifies open-channel noise.

PubMed

Gupta, Rajeev

2017-09-02

The drift kinetic energy of ionic flow through single ion channels cause vibrations of the pore walls which are observed as open-state current fluctuations (open-channel noise) during single-channel recordings. Vibration of the pore wall leads to transitions among different conformational sub-states of the channel protein in the open-state. Open-channel noise analysis can provide important information about the different conformational sub-state transitions and how biochemical modifications of ion channels would affect their transport properties. It has been shown that c-Jun N-terminal kinase-3 (JNK3) becomes activated by phosphorylation in various neurodegenerative diseases and phosphorylates outer mitochondrion associated proteins leading to neuronal apoptosis. In our earlier work, JNK3 has been reported to phosphorylate purified rat brain mitochondrial voltage-dependent anion channel (VDAC) in vitro and modify its conductance and opening probability. In this article we have compared the open-state noise profile of the native and the JNK3 phosphorylated VDAC using Power Spectral Density vs frequency plots. Power spectral density analysis of open-state noise indicated power law with average slope value α ≈1 for native VDAC at both positive and negative voltage whereas average α value < 0.5 for JNK3 phosphorylated VDAC at both positive and negative voltage. It is proposed that 1/f 1 power law in native VDAC open-state noise arises due to coupling of ionic transport and conformational sub-states transitions in open-state and this coupling is perturbed as a result of channel phosphorylation. Copyright © 2017 Elsevier Inc. All rights reserved.

Channel Temperature Estimates for Microwave AlGaN/GaN Power HEMTS on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

A simple technique to estimate the channel temperature of a generic AlGaN/GaN HEMTs on SiC or Sapphire, while incorporating temperature dependence of the thermal conductivity is presented. The procedure is validated b y comparing it's predictions with the experimentally measured temperatures in devices presented in three recently published articles.

In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity

PubMed Central

Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

2012-01-01

When in vivo proton dosimetry is performed with a metal‐oxide semiconductor field‐effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth‐output curve for a mono‐energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMCMOSFET). The SMCMOSFET output value at an arbitrary point was compared with the value obtained by the conventional SMCPPIC, which calculates proton dose distributions by using the depth‐dose curve determined by a parallel‐plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMCPPIC results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector. PACS number: 87.56.‐v PMID:22402385

Evaluation of Dynamic Channel and Power Assignment for Cognitive Networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syed A. Ahmad; Umesh Shukla; Ryan E. Irwin

2011-03-01

In this paper, we develop a unifying optimization formulation to describe the Dynamic Channel and Power Assignment (DCPA) problem and evaluation method for comparing DCPA algorithms. DCPA refers to the allocation of transmit power and frequency channels to links in a cognitive network so as to maximize the total number of feasible links while minimizing the aggregate transmit power. We apply our evaluation method to five algorithms representative of DCPA used in literature. This comparison illustrates the tradeoffs between control modes (centralized versus distributed) and channel/power assignment techniques. We estimate the complexity of each algorithm. Through simulations, we evaluate themore » effectiveness of the algorithms in achieving feasible link allocations in the network, as well as their power efficiency. Our results indicate that, when few channels are available, the effectiveness of all algorithms is comparable and thus the one with smallest complexity should be selected. The Least Interfering Channel and Iterative Power Assignment (LICIPA) algorithm does not require cross-link gain information, has the overall lowest run time, and highest feasibility ratio of all the distributed algorithms; however, this comes at a cost of higher average power per link.« less

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Dosimetric evaluation of a new OneDose MOSFET for Ir-192 energy.

PubMed

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Deshpande, Deepak D

2006-03-07

The purpose of this study was to investigate dosimetry (reproducibility, energy correction, relative response with distance from source, linearity with threshold dose, rate of fading, temperature and angular dependence) of a newly designed OneDosetrade mark MOSFET patient dosimetry system for use in HDR brachytherapy with Ir-192 energy. All measurements were performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min post-irradiation to minimize fading effects. All dosimeters gave reproducible readings with mean deviation of 1.8% (SD 0.4) and 2.4% (SD 0.6) for 0 degrees and 180 degrees incidences, respectively. The mean energy correction factor was found to be 1.1 (range 1.06-1.12). Overall, there was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel plate ion chamber. Linear dose response with threshold voltage shift was observed with applied doses of 0.3 Gy-5 Gy with Ir-192 energy. Linearity (R2 = 1) was observed in the MOSFET signal with the applied dose range of 0.3 Gy-5 Gy with Ir-192 energy. Fading effects were less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period of 1 month. The MOSFET response was found to be decreased by approximately 1.5% at 37 degrees C compared to 20 degrees C. The isotropic response of the MOSFET was found to be within +/-6%. A maximum deviation of 5.5% was obtained between 0 degrees and 180 degrees for both the axes and this should be considered in clinical applications. The small size, cable-less, instant readout, permanent storage of dose and ease of use make the MOSFET a novel dosimeter and beneficial to patients for skin dose measurements with HDRBT using an Ir-192 source compared to the labour demanding and time-consuming TLDs.

Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.

PubMed

Kinhikar, Rajesh A; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M; Dhote, Dipak S; Deshpande, Deepak D

2009-09-01

The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

NASA Astrophysics Data System (ADS)

Jaud, Marie-Anne; Barraud, Sylvain; Saint-Martin, Jérôme; Bournel, Arnaud; Dollfus, Philippe; Jaouen, Hervé

2008-12-01

A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.

MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies.

PubMed

Cheung, T; Butson, M J; Yu, P K N

2003-06-01

This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within +/- 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being +/- 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation.

InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

PubMed

Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

2018-02-19

We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

NASA Astrophysics Data System (ADS)

Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

2014-12-01

We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams

PubMed Central

Kumar, A. Sathish; Sharma, S. D.; Ravindran, B. Paul

2014-01-01

The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams. PMID:25190992

Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams.

PubMed

Kumar, A Sathish; Sharma, S D; Ravindran, B Paul

2014-07-01

The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams.

Clinical implementation of MOSFET detectors for dosimetry in electron beams.

PubMed

Bloemen-van Gurp, Esther J; Minken, Andre W H; Mijnheer, Ben J; Dehing-Oberye, Cary J G; Lambin, Philippe

2006-09-01

To determine the factors converting the reading of a MOSFET detector placed on the patient's skin without additional build-up to the dose at the depth of dose maximum (D(max)) and investigate their feasibility for in vivo dose measurements in electron beams. Factors were determined to relate the reading of a MOSFET detector to D(max) for 4 - 15 MeV electron beams in reference conditions. The influence of variation in field size, SSD, angle and field shape on the MOSFET reading, obtained without additional build-up, was evaluated using 4, 8 and 15 MeV beams and compared to ionisation chamber data at the depth of dose maximum (z(max)). Patient entrance in vivo measurements included 40 patients, mostly treated for breast tumours. The MOSFET reading, converted to D(max), was compared to the dose prescribed at this depth. The factors to convert MOSFET reading to D(max) vary between 1.33 and 1.20 for the 4 and 15 MeV beams, respectively. The SSD correction factor is approximately 8% for a change in SSD from 95 to 100 cm, and 2% for each 5-cm increment above 100 cm SSD. A correction for fields having sides smaller than 6 cm and for irregular field shape is also recommended. For fields up to 20 x 20 cm(2) and for oblique incidence up to 45 degrees, a correction is not necessary. Patient measurements demonstrated deviations from the prescribed dose with a mean difference of -0.7% and a standard deviation of 2.9%. Performing dose measurements with MOSFET detectors placed on the patient's skin without additional build-up is a well suited technique for routine dose verification in electron beams, when applying the appropriate conversion and correction factors.

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, K., E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Takenaka, M.; Takagi, S.

2014-12-08

We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al{sub 2}O{sub 3} gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density (D{sub it}) values at the Al{sub 2}O{sub 3}/GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that onmore » (100) surfaces.« less

Dynamical coupled-channels study of pi N --> pi pi N reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, Hiroyuki; Julia Diaz, Bruno; Lee, Tsung-Shung

2009-01-01

As a step toward performing a complete coupled-channels analysis of the world data of pi N, gamma^* N --> pi N, eta N, pi pi N reactions, the pi N --> pi pi N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C76, 065201 (2007). The channels included are pi N, eta N, and pi pi N which has pi Delta, rho N, and sigma N resonant components. The non-resonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16more » bare excited nucleon (N^*) states which are dressed by the non-resonant interactions as constrained by the unitarity condition. The available total cross section data of pi^+ p --> pi^+ pi^+ n, pi^+ pi^0 and pi^- p --> pi^+ pi^- n, pi^- pi^0 n, pi^0 pi^0 n can be reproduced to a very large extent both in magnitudes and energy-dependence. Possible improvements of the model are investigated, in p« less

Effect of the mobility on (I-V) characteristics of the MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benzaoui, Ouassila, E-mail: o-benzaoui@yahoo.fr; Azizi, Cherifa, E-mail: aziziche@yahoo.fr

2013-12-16

MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.

n-Channel semiconductor materials design for organic complementary circuits.

PubMed

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an

Surface roughness scattering of electrons in bulk mosfets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuverink, Amanda Renee

2015-11-01

Surface-roughness scattering of electrons at the Si-SiO 2 interface is a very important consideration when analyzing Si metal-oxide-semiconductor field-effect transistors (MOSFETs). Scattering reduces the mobility of the electrons and degrades the device performance. 250-nm and 50-nm bulk MOSFETs were simulated with varying device parameters and mesh sizes in order to compare the effects of surface-roughness scattering in multiple devices. The simulation framework includes the ensemble Monte Carlo method used to solve the Boltzmann transport equation coupled with a successive over-relaxation method used to solve the two-dimensional Poisson's equation. Four methods for simulating the surface-roughness scattering of electrons were implemented onmore » both devices and compared: the constant specularity parameter, the momentum-dependent specularity parameter, and the real-space-roughness method with both uniform and varying electric fields. The specularity parameter is the probability of an electron scattering speculariy from a rough surface. It can be chosen as a constant, characterizing partially diffuse scattering of all electrons from the surface the same way, or it can be momentum dependent, where the size of rms roughness and the normal component of the electron wave number determine the probability of electron-momentum randomization. The real-space rough surface method uses the rms roughness height and correlation length of an actual MOSFET to simulate a rough interface. Due to their charge, electrons scatter from the electric field and not directly from the surface. If the electric field is kept uniform, the electrons do not perceive the roughness and scatter as if from a at surface. However, if the field is allowed to vary, the electrons scatter from the varying electric field as they would in a MOSFET. These methods were implemented for both the 50-nm and 250-nm MOSFETs, and using the rms roughness heights and correlation lengths for real devices. The

Dynamical coupled-channels study of {pi}N{yields}{pi}{pi}N reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, H.; Julia-Diaz, B.; Department d'Estructura i Constituents de la Materia and Institut de Ciencies del Cosmos, Universitat de Barcelona E-08028 Barcelona

As a step toward performing a complete coupled-channels analysis of the world data of {pi}N,{gamma}*N{yields}{pi}N,{eta}N,{pi}{pi}N reactions, the {pi}N{yields}{pi}{pi}N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C 76, 065201 (2007). The channels included are {pi}N,{eta}N, and {pi}{pi}N which has {pi}{delta},{rho}N, and {sigma}N resonant components. The nonresonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16 bare excited nucleon (N*) states that are dressed by the nonresonant interactions as constrained by the unitarity condition. The data of total cross sectionsmore » and {pi}N and {pi}{pi} invariant mass distributions of {pi}{sup +}p{yields}{pi}{sup +}{pi}{sup +}n,{pi}{sup +}{pi}{sup 0}p and {pi}{sup -}p{yields}{pi}{sup +}{pi}{sup -}n,{pi}{sup -}{pi}{sup 0}p,{pi}{sup 0}{pi}{sup 0}n reactions from threshold to the invariant mass W=2 GeV can be described to a very large extent. We show the importance of the coupled-channels effects and the strong interference among the contributions from the {pi}{delta},{sigma}N, and {rho}N channels. The large interference between the resonant and nonresonant amplitudes is also demonstrated. Possible future developments are discussed.« less

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

An experimental MOSFET approach to characterize (192)Ir HDR source anisotropy.

PubMed

Toye, W C; Das, K R; Todd, S P; Kenny, M B; Franich, R D; Johnston, P N

2007-09-07

The dose anisotropy around a (192)Ir HDR source in a water phantom has been measured using MOSFETs as relative dosimeters. In addition, modeling using the EGSnrc code has been performed to provide a complete dose distribution consistent with the MOSFET measurements. Doses around the Nucletron 'classic' (192)Ir HDR source were measured for a range of radial distances from 5 to 30 mm within a 40 x 30 x 30 cm(3) water phantom, using a TN-RD-50 MOSFET dosimetry system with an active area of 0.2 mm by 0.2 mm. For each successive measurement a linear stepper capable of movement in intervals of 0.0125 mm re-positioned the MOSFET at the required radial distance, while a rotational stepper enabled angular displacement of the source at intervals of 0.9 degrees . The source-dosimeter arrangement within the water phantom was modeled using the standardized cylindrical geometry of the DOSRZnrc user code. In general, the measured relative anisotropy at each radial distance from 5 mm to 30 mm is in good agreement with the EGSnrc simulations, benchmark Monte Carlo simulation and TLD measurements where they exist. The experimental approach employing a MOSFET detection system of small size, high spatial resolution and fast read out capability allowed a practical approach to the determination of dose anisotropy around a HDR source.

2D Quantum Mechanical Study of Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Quantum Corrections to the 'Atomistic' MOSFET Simulations

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Integrated Silicon Carbide Power Electronic Block

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radhakrishnan, Rahul

2017-11-07

Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuitmore » level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less

A novel high performance ESD power clamp circuit with a small area

NASA Astrophysics Data System (ADS)

Zhaonian, Yang; Hongxia, Liu; Li, Li; Qingqing, Zhuo

2012-09-01

A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. The special structure overcomes other shortcomings in this clamp circuit. Under fast power-up events, the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events, the special structure can keep the clamp MOSFET thoroughly off. Under a falsely triggered event, the special structure can turn off the clamp MOSFET in a short time. The clamp circuit can also reject the power supply noise effectively. Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns/1.8 V power-up, maintains a 1.2 μs delay time and a 2.14 μs turn-off time, and reduces to about 70% of the RC time constant. It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

NASA Astrophysics Data System (ADS)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Comparative study on skin dose measurement using MOSFET and TLD for pediatric patients with acute lymphatic leukemia.

PubMed

Al-Mohammed, Huda I; Mahyoub, Fareed H; Moftah, Belal A

2010-07-01

The object of this study was to compare the difference of skin dose measured in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using metal oxide semiconductor field-effect transistors (mobile MOSFET dose verification system (TN-RD-70-W) and thermoluminescent dosimeters (TLD-100 chips, Harshaw/ Bicron, OH, USA). Because TLD has been the most-commonly used technique in the skin dose measurement of TBI, the aim of the present study is to prove the benefit of using the mobile MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements during the total body irradiation (TBI) over thermoluminescent dosimeters (TLD). The measurements involved 10 pediatric patients ages between 3 and 14 years. Thermoluminescent dosimeters and MOSFET dosimetry were performed at 9 different anatomic sites on each patient. The present results show there is a variation between skin dose measured with MOSFET and TLD in all patients, and for every anatomic site selected, there is no significant difference in the dose delivered using MOSFET as compared to the prescribed dose. However, there is a significant difference for every anatomic site using TLD compared with either the prescribed dose or MOSFET. The results indicate that the dosimeter measurements using the MOSFET gave precise measurements of prescribed dose. However, TLD measurement showed significant increased skin dose of cGy as compared to either prescribed dose or MOSFET group. MOSFET dosimeters provide superior dose accuracy for skin dose measurement in TBI as compared with TLD.

Power Conditioning for MEMS-Based Waste Vibrational Energy Harvester

DTIC Science & Technology

2015-06-01

circuits ...........................................................................................18 Figure 18. Full-wave passive MOSFET rectifier...ABBREVIATIONS AC Alternative Current AlN Aluminum Nitride DC Direct Current LIA Lock-In Amplifier MEMS Microelectromechanical Systems MOSFET ...efficiency is achieved when input voltage is over 2–3 V [14]. Using metal-oxide-semiconductor field-effect transistors ( MOSFETs ) in a rectifier instead of

An analytical drain current model for symmetric double-gate MOSFETs

NASA Astrophysics Data System (ADS)

Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

2018-04-01

An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

Dynamical coupled-channels study of {pi}N {right arrow} {pi pi}N reactions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kamano, H.; Julia-Diaz, B.; Lee, T.-S. H.

As a step toward performing a complete coupled-channels analysis of the world data of {pi}N,{gamma}*N {yields} {pi}N,{eta}N,{pi}{pi}N reactions, the {pi}N {yields} {pi}{pi}N reactions are investigated starting with the dynamical coupled-channels model developed in Phys. Rev. C 76, 065201 (2007). The channels included are {pi}N,{eta}N, and {pi}{pi}N which has {pi}{Delta},{rho}N, and {sigma}N resonant components. The nonresonant amplitudes are generated from solving a set of coupled-channels equations with the meson-baryon potentials defined by effective Lagrangians. The resonant amplitudes are generated from 16 bare excited nucleon (N*) states that are dressed by the nonresonant interactions as constrained by the unitarity condition. The datamore » of total cross sections and {pi}N and {pi}{pi} invariant mass distributions of {pi} + p {yields} {pi} + {pi} + n, {pi} + {pi}0p and {pi} - p {yields} {pi} + {pi} - n, {pi} - {pi}0p,{pi}0{pi}0n reactions from threshold to the invariant mass W = 2 GeV can be described to a very large extent. We show the importance of the coupled-channels effects and the strong interference among the contributions from the {pi}{Delta},{sigma}N, and {rho}N channels. The large interference between the resonant and nonresonant amplitudes is also demonstrated. Possible future developments are discussed.« less

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

PubMed

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-05-01

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

High kappa Dielectrics on InGaAs and GaN - Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2011-04-20

ALD-Al2O3 and in-situ MBE-Al2O3/ Ga2O3 (Gd2O3) [GGO] as the gate dielectrics. The advances of the InGaAs MOSFETs achieved will enable future CMOS...and GaN MOSFETs:  High-performance self-aligned inversion-channel In0.53Ga0.47As and In0.75Ga0.25As MOSFET’s with Al2O3/ Ga2O3 (Gd2O3) as gate... Ga2O3 (Gd2O3) as gate dielectrics Key accomplishments in devices of 1m gate length: High drain current of 1.23 mA/m High transcoductance of 714

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

NASA Astrophysics Data System (ADS)

Naderi, Ali

2016-01-01

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, "Single Halo GNRFET (SH-GNRFET)", is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON-OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power-delay product and lower delay time.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

NASA Astrophysics Data System (ADS)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganesan, B; Prakasarao, A; Singaravelu, G

Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap.more » To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.« less

Power formula for open-channel flow resistance

USGS Publications Warehouse

Chen, Cheng-lung

1988-01-01

This paper evaluates various power formulas for flow resistance in open channels. Unlike the logarithmic resistance equation that can be theoretically derived either from Prandtl's mixing-length hypothesis or von Karman's similarity hypothesis, the power formula has long had an appearance of empiricism. Nevertheless, the simplicity in the form of the power formula has made it popular among the many possible forms of flow resistance formulas. This paper reexamines the concept and rationale of the power formulation, thereby addressing some critical issues in the modeling of flow resistance.

Impact of underlap and mole-fraction on RF performance of strained-Si/Si1-xGex/strained-Si DG MOSFETs

NASA Astrophysics Data System (ADS)

Dutta, Arka; Koley, Kalyan; Sarkar, Chandan K.

2014-11-01

In this paper, a systematic RF performance analysis of double-gate strained silicon (DGSS) nMOSFETs is presented. The analysis is focused upon impact of Germanium mole-fraction variation on RF performance of underlap engineered DGSS nMOSFET. The RF performance of the device is analysed as a function of intrinsic RF figure of merits (FOMs) including non-quasi static effects (NQS). The RF FOMs are represented by the intrinsic gate to source/drain capacitance (Cgs and Cgd) and resistance (Rgs and Rgd), the transport delay (τm), the intrinsic inductance (Lsd), the cut-off frequency (fT), and the maximum oscillation frequency (fMAX). The results of the study suggested a significant improvement in the device performance, up to 40% increase in Germanium mole fraction (χ).

Research on high power intra-channel crosstalk attack in optical networks

NASA Astrophysics Data System (ADS)

Ren, Shuai; Zhang, Yinfa; Wang, Jingyu; Zhang, Jumei; Rao, Xuejun; Fang, Yuanyuan

2017-02-01

The mechanism of high power intra-channel crosstalk attack is analyzed theoretically and the conclusion that power of attack signal and crosstalk coefficient of optical switch are the main factors for which high power intra-channel have destructive effect on quality of legitimate signals is drawn. Effects of high power intra-channel crosstalk attack on quality of legitimate signals and its capability of attack propagation are investigated quantitatively by building the simulation system in VPI software. The results show that legitimate signals through the first and the second stage optical switch are affected by attack and legitimate signal through the third stage optical switch is almost unaffected by attack when power of original attack signal (OAS) is above 20dB more than that of legitimate signals and crosstalk coefficient of optical switch is -20dB at optical cross connect 1 (OXC1). High power intra-channel crosstalk attack has a certain capability of attack propagation. Attack capability of OAS can be propagated to OXC3 when power of OAS is 27dB more than that of legitimate signals and crosstalk coefficient of optical switch is -20dB. We also find that the secondary attack signal (SAS) does not have capability of attack propagation.

How Power Mechanism Influence Channel Bilateral Opportunism

NASA Astrophysics Data System (ADS)

Tian, Yu; Chen, Shaodan

In the background of marketing channel power asymmetry structure, this article discuss the relation between power dominant member’s use of power mechanism and the opportunism behavior of both Power disadvantage member and the power dominant member itself, and test whether distributive fairness perception and procedural fairness perception have moderate effects on this relation. The result shows that, the power dominant member’s use of coercive power will increase the opportunistic tendency of both sides; in contrast, the power dominant member’s use of noncorecive power will inhibit such tendency. Distributive fairness perception and procedural fairness perception negatively moderate the relation between power dominant member’s use of noncorecive power and power disadvantage member’s opportunism. Procedural fairness perception also negatively moderates the relation between power dominant member’s use of coercive power and the other side’s opportunism.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

2007-03-01

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

Angular dependence of the MOSFET dosimeter and its impact on in vivo surface dose measurement in breast cancer treatment.

PubMed

Qin, S; Chen, T; Wang, L; Tu, Y; Yue, N; Zhou, J

2014-08-01

The focus of this study is the angular dependence of two types of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeters (MOSFET20 and OneDose/OneDosePlus) when used for surface dose measurements. External beam radiationat different gantry angles were delivered to a cubic solid water phantom with a MOSFET placed on the top surface at CAX. The long axis of the MOSFET was oriented along the gantry axis of rotation, with the dosimeter (bubble side) facing the radiation source. MOSFET-measured surface doses were compared against calibrated radiochromic film readings. It was found that both types of MOSFET dosimeters exhibited larger than previously reported angular dependence when measuring surface dose in beams at large oblique angles. For the MOSFET20 dosimeter the measured surface dose deviation against film readings was as high as 17% when the incident angle was 72 degrees to the norm of the phantom surface. It is concluded that some MOSFET dosimeters may have a strong angular dependence when placed on the surface of water-equivalent material, even though they may have an isotropic angular response when surrounded by uniform medium. Extra on-surface calibration maybe necessary before using MOSFET dosimeters for skin dose measurement in tangential fields.

Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Ghaffari, Majid

2015-11-01

In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

NASA Astrophysics Data System (ADS)

Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

2013-04-01

Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

In vivo prostate IMRT dosimetry with MOSFET detectors using brass buildup caps

PubMed Central

Varadhan, Raj; Miller, John; Garrity, Brenden; Weber, Michael

2006-01-01

The feasibility of using dual bias metal oxide semiconductor field effect transistor (MOSFET) detectors with the new hemispherical brass buildup cap for in vivo dose measurements in prostate intensity‐modulated radiotherapy (IMRT) treatments was investigated and achieved. In this work, MOSFET detectors with brass buildup caps placed on the patient's skin surface on the central axis of the individual IMRT beams are used to determine the maximum entrance dose (Dmax) from the prostate IMRT fields. A general formalism with various correction factors taken into account to predict Dmax entrance dose for the IMRT fields with MOSFETs was developed and compared against predicted dose from the treatment‐planning system (TPS). We achieved an overall accuracy of better than ±5% on all measured fields for both 6‐MV and 10‐MV beams when compared to predicted doses from the Philips Pinnacle 3 and CMS XiO TPSs, respectively. We also estimate the total uncertainty in estimation of MOSFET dose in the high‐sensitivity mode for IMRT therapy to be 4.6%. PACS numbers: 87.53Xd, 87.56Fc PMID:17533354

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1991-01-01

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Application of MOSFET detectors for dosimetry in small animal radiography using short exposure times.

PubMed

De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G Allan; Yoshizumi, Terry T

2008-08-01

Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies.

Application of MOSFET Detectors for Dosimetry in Small Animal Radiography Using Short Exposure Times

PubMed Central

De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G. Allan; Yoshizumi, Terry T.

2008-01-01

Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies. PMID:18666818

Dose verification to cochlea during gamma knife radiosurgery of acoustic schwannoma using MOSFET dosimeter.

PubMed

Sharma, Sunil D; Kumar, Rajesh; Akhilesh, Philomina; Pendse, Anil M; Deshpande, Sudesh; Misra, Basant K

2012-01-01

Dose verification to cochlea using metal oxide semiconductor field effect transistor (MOSFET) dosimeter using a specially designed multi slice head and neck phantom during the treatment of acoustic schwannoma by Gamma Knife radiosurgery unit. A multi slice polystyrene head phantom was designed and fabricated for measurement of dose to cochlea during the treatment of the acoustic schwannoma. The phantom has provision to position the MOSFET dosimeters at the desired location precisely. MOSFET dosimeters of 0.2 mm x 0.2 mm x 0.5 μm were used to measure the dose to the cochlea. CT scans of the phantom with MOSFETs in situ were taken along with Leksell frame. The treatment plans of five patients treated earlier for acoustic schwannoma were transferred to the phantom. Dose and coordinates of maximum dose point inside the cochlea were derived. The phantom along with the MOSFET dosimeters was irradiated to deliver the planned treatment and dose received by cochlea were measured. The treatment planning system (TPS) estimated and measured dose to the cochlea were in the range of 7.4 - 8.4 Gy and 7.1 - 8 Gy, respectively. The maximum variation between TPS calculated and measured dose to cochlea was 5%. The measured dose values were found in good agreement with the dose values calculated using the TPS. The MOSFET dosimeter can be a suitable choice for routine dose verification in the Gamma Knife radiosurgery.

Quantum Mechanical Study of Nanoscale MOSFET

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

2001-01-01

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

NASA Astrophysics Data System (ADS)

Kutsuki, Katsuhiro; Murakami, Yuki; Watanabe, Yukihiko; Onishi, Toru; Yamamoto, Kensaku; Fujiwara, Hirokazu; Ito, Takahiro

2018-04-01

The effects of the surface roughness of trench sidewalls on electrical properties have been investigated in 4H-SiC trench MOSFETs. The surface roughness of trench sidewalls was well controlled and evaluated by atomic force microscopy. The effective channel mobility at each measurement temperature was analyzed on the basis of the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had a small contribution to channel mobility, and at the arithmetic average roughness in the range of 0.4-1.4 nm, there was no correlation between the experimental surface roughness and the surface roughness scattering mobility. On the other hand, the characteristics of the gate leakage current and constant current stress time-dependent dielectric breakdown tests demonstrated that surface morphology had great impact on the long-term reliability of gate oxides.

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi

2015-02-16

We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al{sub 2}O{sub 3} and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm{sup 2}/V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al{sub 2}O{sub 3} ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm{sup 2}/V s for GaSb-OI p-MOSFETs with themore » 20-nm-thick GaSb layer.« less

Development of a pMOSFET sensor with a Gd converter for low energy neutron dosimetry.

PubMed

Lee, N H; Kim, S H; Youk, G U; Park, I J; Kim, Y M

2004-01-01

A pMOSFET having a 10 microm thick Gadolinium (Gd) layer has been invented as a slow neutron sensor. When slow neutrons are incident to the Gd layer, conversion electrons, which generate electron-hole pairs in the SiO2 layer of the pMOSFET, are generated by a neutron capture process. The holes are easily trapped in the oxide and act as positive-charge centres in the oxide. Due to the induced charges, the threshold turn-on voltage of the pMOSFET is changed. The developed sensors were tested at a neutron beam port of the HANARO research reactor and a 60Co irradiation facility to investigate slow neutron response and gamma ray contamination, respectively. The resultant voltage change was proportional to the accumulated neutron dose and it was very sensitive to slow neutrons. Moreover, ionising radiation contamination was negligible. It can also be used in a mixed radiation field by subtracting the voltage change of a pMOSFET without Gd from that of the Gd-pMOSFET.

Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sulaeman, M. Y.; Widita, R.

2014-09-30

Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulsemore » than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.« less

Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe $${p}$$ MOSFETs

DOE PAGES

Duan, Guo Xing; Hachtel, Jordan A.; Zhang, En Xia; ...

2016-09-20

In this paper, we have measured the low-frequency 1/f noise of Si 0.55Ge 0.45 pMOSFETs with a Si capping layer and SiO 2/HfO 2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (Svd) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO 2 and HfO 2more » layers. Finally, at lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.« less

Progress in MOSFET double-layer metalization

NASA Technical Reports Server (NTRS)

Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

1980-01-01

Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

An in-house developed resettable MOSFET dosimeter for radiotherapy.

PubMed

Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

2010-02-21

The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy(-1) can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min(-1)) was within 2.5%, temperature dependence within 2.0% (25-37 degrees C). A strong angular dependence has been observed for gantry incidences exceeding +/-30 degrees C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

A novel double gate metal source/drain Schottky MOSFET as an inverter

NASA Astrophysics Data System (ADS)

Loan, Sajad A.; Kumar, Sunil; Alamoud, Abdulrahman M.

2016-03-01

In this work, we propose and simulate a novel structure of a double gate metal source/drain (MSD) Schottky MOSFET. The novelty of the proposed device is that it realizes a complete CMOS inverter action, which is actually being realized by the combination of two n and p type MOS transistors in the conventional CMOS technology. Therefore, the use of this device will significantly reduce the transistor count in implementing combinational and sequential circuits. Further, there is a significant reduction in the number of junctions and regions in the proposed device in comparison to the conventional CMOS inverter. Therefore, the proposed device is compact and can consume less power. The proposed device has been named as Sajad-Sunil-Schottky (SSS) device. The mixed mode circuit analysis of the proposed SSS device has shown that a CMOS inverter action with high logic level (VOH) and low logic level (VOL) as ∼VDD and ∼ground respectively. A two dimensional calibrated simulation study using the experimental data has revealed that the proposed SSS device in n and p type modes have subthreshold slopes (S) of 130 mV/decade and 85 mV/decade respectively and have reasonable high ION and ION/IOFF ratio's. Furthermore, it has been proved that such a device action cannot be realised by folding the conventional doped n and p MOS transistors.

A mobile communication system providing integrated voice/data services over power limited satellite channels

NASA Astrophysics Data System (ADS)

Bose, Sanjay K.; Gordon, J. J.

The modeling and analysis of a system providing integrated voice/data services to mobile terminals over a power-limited satellite channel are discussed. The mobiles use slotted Aloha random access to send requests for channel assignments to a central station. For successful requests, the actual transmission of voice/data within a call is done using the channel assigned for this purpose by the central station. The satellite channel is assumed to be power limited. Taking into account the known burstiness of voice sources (which use a voice-activated switch), the central station overassigns channels so that the average total power is below the power limit of the satellite transponder. The performance of this model is analyzed. Certain simple, static control strategies for improving performance are also proposed.

Switching power supply

DOEpatents

Mihalka, A.M.

1984-06-05

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry.

PubMed

Brady, S L; Kaufman, R A

2012-06-01

The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ~25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Calibration precision was measured to be better than 5%-7%, 3%-5%, and 2%-4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy(-1) versus the CT scatter phantom 29.2 ± 1.0 mV cGy(-1) and FIA with x-ray 29.9 ± 1.1 mV cGy(-1) methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ~3000 mV. The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the eventual use for phantom dosimetry, a measurement error ~12

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Simulation of cooling efficiency via miniaturised channels in multilayer LTCC for power electronics

NASA Astrophysics Data System (ADS)

Pietrikova, Alena; Girasek, Tomas; Lukacs, Peter; Welker, Tilo; Müller, Jens

2017-03-01

The aim of this paper is detailed investigation of thermal resistance, flow analysis and distribution of coolant as well as thermal distribution inside multilayer LTCC substrates with embedded channels for power electronic devices by simulation software. For this reason four various structures of internal channels in the multilayer LTCC substrates were designed and simulated. The impact of the volume flow, structures of channels, and power loss of chip was simulated, calculated and analyzed by using the simulation software Mentor Graphics FloEFDTM. The structure, size and location of channels have the significant impact on thermal resistance, pressure of coolant as well as the effectivity of cooling power components (chips) that can be placed on the top of LTCC substrate. The main contribution of this paper is thermal analyze, optimization and impact of 4 various cooling channels embedded in LTCC multilayer structure. Paper investigate, the effect of volume flow in cooling channels for achieving the least thermal resistance of LTCC substrate that is loaded by power thermal chips. Paper shows on the impact of the first chips thermal load on the second chip as well as. This possible new technology could ensure in the case of practical realization effective cooling and increasing reliability of high power modules.

Review on analog/radio frequency performance of advanced silicon MOSFETs

NASA Astrophysics Data System (ADS)

Passi, Vikram; Raskin, Jean-Pierre

2017-12-01

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

Liquid Nitrogen Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power converter at liquid nitrogen temperature (LNT) is compared with room temperature operation. The power circuit as well as the control circuit of the converter, designed with commercially available components, were operated at LNT and resulted in a slight improvement in converter efficiency. The improvement in power MOSFET operation was offset by deteriorating performance of the output diode rectifier at LNT. Performance of the converter could be further improved at low temperatures by using only power MOSFET's as switches. The use of a resonant topology will further improve the circuit performance by reducing the switching noise and loss.

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

DTIC Science & Technology

2007-08-01

investigated are insulated-gate bipolar transistors ( IGBTs ) in 4H-SiC. The IGBT combines the best aspects of MOS and bipolar power transistors... IGBTs can be thought of as a fusion of a MOSFET and a BJT. The MOSFET provides a high input impedance while the BJT provides conductivity modulation of...region due to conductivity modulation from the forward-biased BJT. The IGBT is structurally identical to a MOSFET, except that the substrate doping

Verification of eye lens dose in IMRT by MOSFET measurement.

PubMed

Wang, Xuetao; Li, Guangjun; Zhao, Jianling; Song, Ying; Xiao, Jianghong; Bai, Sen

2018-04-17

The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal-oxide-semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions. Copyright © 2018 American Association of Medical Dosimetrists. Published by Elsevier Inc. All rights reserved.

Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

NASA Astrophysics Data System (ADS)

Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

2016-09-01

This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

Monte Carlo simulation of MOSFET dosimeter for electron backscatter using the GEANT4 code.

PubMed

Chow, James C L; Leung, Michael K K

2008-06-01

The aim of this study is to investigate the influence of the body of the metal-oxide-semiconductor field effect transistor (MOSFET) dosimeter in measuring the electron backscatter from lead. The electron backscatter factor (EBF), which is defined as the ratio of dose at the tissue-lead interface to the dose at the same point without the presence of backscatter, was calculated by the Monte Carlo simulation using the GEANT4 code. Electron beams with energies of 4, 6, 9, and 12 MeV were used in the simulation. It was found that in the presence of the MOSFET body, the EBFs were underestimated by about 2%-0.9% for electron beam energies of 4-12 MeV, respectively. The trend of the decrease of EBF with an increase of electron energy can be explained by the small MOSFET dosimeter, mainly made of epoxy and silicon, not only attenuated the electron fluence of the electron beam from upstream, but also the electron backscatter generated by the lead underneath the dosimeter. However, this variation of the EBF underestimation is within the same order of the statistical uncertainties as the Monte Carlo simulations, which ranged from 1.3% to 0.8% for the electron energies of 4-12 MeV, due to the small dosimetric volume. Such small EBF deviation is therefore insignificant when the uncertainty of the Monte Carlo simulation is taken into account. Corresponding measurements were carried out and uncertainties compared to Monte Carlo results were within +/- 2%. Spectra of energy deposited by the backscattered electrons in dosimetric volumes with and without the lead and MOSFET were determined by Monte Carlo simulations. It was found that in both cases, when the MOSFET body is either present or absent in the simulation, deviations of electron energy spectra with and without the lead decrease with an increase of the electron beam energy. Moreover, the softer spectrum of the backscattered electron when lead is present can result in a reduction of the MOSFET response due to stronger

The Power Coefficient in the Theory of Energy Extraction from Tidal Channels

NASA Astrophysics Data System (ADS)

Cummins, P. F.

2014-12-01

The maximum average power available from a fence of turbines deployed in a tidal channel is given by the simple formula, Ρ=γρgaQmax, where ρga is the amplitude of pressure difference across ends of the channel, Qmax is the maximum volume flux through the channel in the undisturbed state (i.e., before turbines are deployed), and γ is a numerical coefficient. The latter depends only weakly on the underlying dynamical balance of the channel. This is shown to be consequence of quadratic drag and changes to the natural impedance of the channel as deployment of turbines impedes the flow. Additionally, it is shown that the power coefficient γ is relatively insensitive to the form of the turbine drag.

Characterization of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure.

PubMed

Bassinet, Céline; Huet, Christelle; Baumann, Marion; Etard, Cécile; Réhel, Jean-Luc; Boisserie, Gilbert; Debroas, Jacques; Aubert, Bernard; Clairand, Isabelle

2013-04-01

As MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detectors allow dose measurements in real time, the interest in these dosimeters is growing. The aim of this study was to investigate the dosimetric properties of commercially available TN-502RD-H MOSFET silicon detectors (Best Medical Canada, Ottawa, Canada) in order to use them for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure. Reproducibility of the measurements, dose rate dependence, and dose response of the MOSFET detectors have been studied with a Co source. Influence of the dose rate, frequency, and pulse duration on MOSFET responses has also been studied in pulsed x-ray fields. Finally, in order to validate the integrated dose given by MOSFET detectors, MOSFETs and TLDs (LiF:Mg,Cu,P) were fixed on an Alderson-Rando phantom in the conditions of an interventional neuroradiology procedure, and their responses have been compared. The results of this study show the suitability of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of accident, provided a well-corrected energy dependence, a pulse duration equal to or higher than 10 ms, and an optimized contact between the detector and the skin of the patient are achieved.

Real-time in vivo dosimetry with MOSFET detectors in serial tomotherapy for head and neck cancer patients.

PubMed

Qi, Zhen-Yu; Deng, Xiao-Wu; Huang, Shao-Min; Shiu, Almon; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly; Kron, Tomas

2011-08-01

A real-time dose verification method using a recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) of intensity-modulated radiation therapy (IMRT). Following the investigation of key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field size, beam incident angles and radiation energy spectrum), the feasibility of this detector in IMRT dose verification was demonstrated by comparison with ion chamber measurements taken in an IMRT QA phantom. Real-time in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. MOSFET sensitivity did not change with SSD. For field sizes smaller than 20 × 20 cm(2), MOFET sensitivity varied within 1.0%. The detector angular response was isotropic within 2% over 360°, and the observed sensitivity variation due to changes in the energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at all points in IMRT phantom plan verification, within 5%. The mean difference between 48 IMRT MOSFET-measured doses and calculated values in 8 patients was 3.33% and ranged from -2.20% to 7.89%. More than 90% of the total measurements had deviations of less than 5% from the planned doses. The MOSFET dosimetry system has been proven to be an effective tool in evaluating the actual dose within individual patients during IMRT treatment. Copyright © 2011 Elsevier Inc. All rights reserved.

Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-01-01

A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

Power module assemblies with staggered coolant channels

DOEpatents

Herron, Nicholas Hayden; Mann, Brooks S; Korich, Mark D

2013-07-16

A manifold is provided for supporting a power module assembly with a plurality of power modules. The manifold includes a first manifold section. The first face of the first manifold section is configured to receive the first power module, and the second face of the first manifold section defines a first cavity with a first baseplate thermally coupled to the first power module. The first face of the second manifold section is configured to receive the second power module, and the second face of the second manifold section defines a second cavity with a second baseplate thermally coupled to the second power module. The second face of the first manifold section and the second face of the second manifold section are coupled together such that the first cavity and the second cavity form a coolant channel. The first cavity is at least partially staggered with respect to second cavity.

NOTE: An in-house developed resettable MOSFET dosimeter for radiotherapy

NASA Astrophysics Data System (ADS)

Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

2010-02-01

The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy-1 can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min-1) was within 2.5%, temperature dependence within 2.0% (25-37° C). A strong angular dependence has been observed for gantry incidences exceeding ±30° C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated and is currently

Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

PubMed

Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

2015-08-01

In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Multi-Channel Method for Detecting Periodic Forced Oscillations in Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Follum, James D.; Tuffner, Francis K.

2016-11-14

Forced oscillations in electric power systems are often symptomatic of equipment malfunction or improper operation. Detecting and addressing the cause of the oscillations can improve overall system operation. In this paper, a multi-channel method of detecting forced oscillations and estimating their frequencies is proposed. The method operates by comparing the sum of scaled periodograms from various channels to a threshold. A method of setting the threshold to specify the detector's probability of false alarm while accounting for the correlation between channels is also presented. Results from simulated and measured power system data indicate that the method outperforms its single-channel counterpartmore » and is suitable for real-world applications.« less

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui

Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence onmore » the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.« less

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Design of high-voltage, high-power, solid state remote power controllers for aerospace applications

NASA Astrophysics Data System (ADS)

Sturman, J. C.

1985-05-01

Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

NASA Astrophysics Data System (ADS)

Datta, Kanak; Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

2017-02-01

Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device `on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

D1 receptors physically interact with N-type calcium channels to regulate channel distribution and dendritic calcium entry.

PubMed

Kisilevsky, Alexandra E; Mulligan, Sean J; Altier, Christophe; Iftinca, Mircea C; Varela, Diego; Tai, Chao; Chen, Lina; Hameed, Shahid; Hamid, Jawed; Macvicar, Brian A; Zamponi, Gerald W

2008-05-22

Dopamine signaling through D1 receptors in the prefrontal cortex (PFC) plays a critical role in the maintenance of higher cognitive functions, such as working memory. At the cellular level, these functions are predicated to involve alterations in neuronal calcium levels. The dendrites of PFC neurons express D1 receptors and N-type calcium channels, yet little information exists regarding their coupling. Here, we show that D1 receptors potently inhibit N-type channels in dendrites of rat PFC neurons. Using coimmunoprecipitation, we demonstrate the existence of a D1 receptor-N-type channel signaling complex in this region, and we provide evidence for a direct receptor-channel interaction. Finally, we demonstrate the importance of this complex to receptor-channel colocalization in heterologous systems and in PFC neurons. Our data indicate that the N-type calcium channel is an important physiological target of D1 receptors and reveal a mechanism for D1 receptor-mediated regulation of cognitive function in the PFC.

Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Casey, Megan; Topper, Alyson; Wilcox, Edward; Phan, Anthony; Ikpe, Stanley; LaBel, Ken

2015-01-01

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

Simulation study of short-channel effects of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Mori, Takahiro; Morita, Yukinori; Mizubayashi, Wataru; Masahara, Meishoku; Migita, Shinji; Ota, Hiroyuki; Endo, Kazuhiro; Matsukawa, Takashi

2018-04-01

Short-channel effects of tunnel field-effect transistors (FETs) are investigated in detail using simulations of a nonlocal band-to-band tunneling model. Discussion is limited to silicon. Several simulation scenarios were considered to address different effects, such as source overlap and drain offset effects. Adopting the drain offset to suppress the drain leakage current suppressed the short channel effects. The physical mechanism underlying the short-channel behavior of the tunnel FETs (TFETs) was very different from that of metal-oxide-semiconductor FETs (MOSFETs). The minimal gate lengths that do not lose on-state current by one order are shown to be 3 nm for single-gate structures and 2 nm for double gate structures, as determined from the drain offset structure.

Estimation of computed tomography dose index in cone beam computed tomography: MOSFET measurements and Monte Carlo simulations.

PubMed

Kim, Sangroh; Yoshizumi, Terry; Toncheva, Greta; Yoo, Sua; Yin, Fang-Fang; Frush, Donald

2010-05-01

To address the lack of accurate dose estimation method in cone beam computed tomography (CBCT), we performed point dose metal oxide semiconductor field-effect transistor (MOSFET) measurements and Monte Carlo (MC) simulations. A Varian On-Board Imager (OBI) was employed to measure point doses in the polymethyl methacrylate (PMMA) CT phantoms with MOSFETs for standard and low dose modes. A MC model of the OBI x-ray tube was developed using BEAMnrc/EGSnrc MC system and validated by the half value layer, x-ray spectrum and lateral and depth dose profiles. We compared the weighted computed tomography dose index (CTDIw) between MOSFET measurements and MC simulations. The CTDIw was found to be 8.39 cGy for the head scan and 4.58 cGy for the body scan from the MOSFET measurements in standard dose mode, and 1.89 cGy for the head and 1.11 cGy for the body in low dose mode, respectively. The CTDIw from MC compared well to the MOSFET measurements within 5% differences. In conclusion, a MC model for Varian CBCT has been established and this approach may be easily extended from the CBCT geometry to multi-detector CT geometry.

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code

NASA Astrophysics Data System (ADS)

Panettieri, Vanessa; Amor Duch, Maria; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-01

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm2 and a thickness of 0.5 µm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water™ build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water™ cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can

Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code.

PubMed

Panettieri, Vanessa; Duch, Maria Amor; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

2007-01-07

The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm(2) and a thickness of 0.5 microm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can successfully

Silicon junctionless field effect transistors as room temperature terahertz detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marczewski, J., E-mail: jmarcz@ite.waw.pl; Tomaszewski, D.; Zaborowski, M.

2015-09-14

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that themore » junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.« less

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ya-Chao, Zhang; Xiao-Wei, Zhou; Sheng-Rui, Xu; Da-Zheng, Chen; Zhi-Zhe, Wang; Xing, Wang; Jin-Feng, Zhang; Jin-Cheng, Zhang; Yue, Hao

2016-01-01

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

A Beacon Transmission Power Control Algorithm Based on Wireless Channel Load Forecasting in VANETs.

PubMed

Mo, Yuanfu; Yu, Dexin; Song, Jun; Zheng, Kun; Guo, Yajuan

2015-01-01

In a vehicular ad hoc network (VANET), the periodic exchange of single-hop status information broadcasts (beacon frames) produces channel loading, which causes channel congestion and induces information conflict problems. To guarantee fairness in beacon transmissions from each node and maximum network connectivity, adjustment of the beacon transmission power is an effective method for reducing and preventing channel congestion. In this study, the primary factors that influence wireless channel loading are selected to construct the KF-BCLF, which is a channel load forecasting algorithm based on a recursive Kalman filter and employs multiple regression equation. By pre-adjusting the transmission power based on the forecasted channel load, the channel load was kept within a predefined range; therefore, channel congestion was prevented. Based on this method, the CLF-BTPC, which is a transmission power control algorithm, is proposed. To verify KF-BCLF algorithm, a traffic survey method that involved the collection of floating car data along a major traffic road in Changchun City is employed. By comparing this forecast with the measured channel loads, the proposed KF-BCLF algorithm was proven to be effective. In addition, the CLF-BTPC algorithm is verified by simulating a section of eight-lane highway and a signal-controlled urban intersection. The results of the two verification process indicate that this distributed CLF-BTPC algorithm can effectively control channel load, prevent channel congestion, and enhance the stability and robustness of wireless beacon transmission in a vehicular network.

A Beacon Transmission Power Control Algorithm Based on Wireless Channel Load Forecasting in VANETs

PubMed Central

Mo, Yuanfu; Yu, Dexin; Song, Jun; Zheng, Kun; Guo, Yajuan

2015-01-01

In a vehicular ad hoc network (VANET), the periodic exchange of single-hop status information broadcasts (beacon frames) produces channel loading, which causes channel congestion and induces information conflict problems. To guarantee fairness in beacon transmissions from each node and maximum network connectivity, adjustment of the beacon transmission power is an effective method for reducing and preventing channel congestion. In this study, the primary factors that influence wireless channel loading are selected to construct the KF-BCLF, which is a channel load forecasting algorithm based on a recursive Kalman filter and employs multiple regression equation. By pre-adjusting the transmission power based on the forecasted channel load, the channel load was kept within a predefined range; therefore, channel congestion was prevented. Based on this method, the CLF-BTPC, which is a transmission power control algorithm, is proposed. To verify KF-BCLF algorithm, a traffic survey method that involved the collection of floating car data along a major traffic road in Changchun City is employed. By comparing this forecast with the measured channel loads, the proposed KF-BCLF algorithm was proven to be effective. In addition, the CLF-BTPC algorithm is verified by simulating a section of eight-lane highway and a signal-controlled urban intersection. The results of the two verification process indicate that this distributed CLF-BTPC algorithm can effectively control channel load, prevent channel congestion, and enhance the stability and robustness of wireless beacon transmission in a vehicular network. PMID:26571042

Recent progress in n-channel organic thin-film transistors.

PubMed

Wen, Yugeng; Liu, Yunqi

2010-03-26

Particular attention has been focused on n-channel organic thin-film transistors (OTFTs) during the last few years, and the potentially cost-effective circuitry-based applications in flexible electronics, such as flexible radiofrequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n-channel semiconductors in the past five years, and limitations and practicable solutions for n-channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin-film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field.

Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy.

PubMed

Kumar, A Sathish; Singh, I Rabi Raja; Sharma, S D; Ravindran, B Paul

2015-01-01

The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mudholkar, Mihir; Ahmed, Shamin; Ericson, Milton Nance

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented whichmore » requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.« less

Evaluation of the usefulness of a MOSFET detector in an anthropomorphic phantom for 6-MV photon beam.

PubMed

Kohno, Ryosuke; Hirano, Eriko; Kitou, Satoshi; Goka, Tomonori; Matsubara, Kana; Kameoka, Satoru; Matsuura, Taeko; Ariji, Takaki; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2010-07-01

In order to evaluate the usefulness of a metal oxide-silicon field-effect transistor (MOSFET) detector as a in vivo dosimeter, we performed in vivo dosimetry using the MOSFET detector with an anthropomorphic phantom. We used the RANDO phantom as an anthropomorphic phantom, and dose measurements were carried out in the abdominal, thoracic, and head and neck regions for simple square field sizes of 10 x 10, 5 x 5, and 3 x 3 cm(2) with a 6-MV photon beam. The dose measured by the MOSFET detector was verified by the dose calculations of the superposition (SP) algorithm in the XiO radiotherapy treatment-planning system. In most cases, the measured doses agreed with the results of the SP algorithm within +/-3%. Our results demonstrated the utility of the MOSFET detector for in vivo dosimetry even in the presence of clinical tissue inhomogeneities.

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

PubMed

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

n-Alcohols Inhibit Voltage-Gated Na+ Channels Expressed in Xenopus Oocytes

PubMed Central

Horishita, Takafumi; Harris, R. Adron

2008-01-01

Voltage-gated sodium channels are essential for the initiation and propagation of action potentials in excitable cells and are known as a target of local anesthetics. In addition, inhibition of sodium channels by volatile anesthetics has been proposed as a mechanism of general anesthesia. The n-alcohols produce anesthesia, and their potency increases with carbon number until a “cut-off” is reached. In this study, we examined effects of a range of n-alcohols on Nav1.2 subunits to determine the alcohol cut-off for this channel. We also studied the effect of a short-chain alcohol (ethanol) and a long-chain alcohol (octanol) on Nav1.2, Nav1.4, Nav1.6, and Nav1.8 subunits, and we investigated the effects of alcohol on channel kinetics. Ethanol and octanol inhibited sodium currents of all subunits, and the inhibition of the Nav1.2 channel by n-alcohols indicated a cut-off at nonanol. Ethanol and octanol produced open-channel block, which was more pronounced for Nav1.8 than for the other sodium channels. Inhibition of Nav1.2 was due to decreased activation and increased inactivation. These results suggest that sodium channels may have a hydrophobic binding site for n-alcohols and demonstrate the differences in the kinetic mechanisms of inhibition for n-alcohols and inhaled anesthetics. PMID:18434586

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

NASA Astrophysics Data System (ADS)

Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

2018-05-01

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

Characterization of commercial MOSFET detectors and their feasibility for in-vivo HDR brachytherapy.

PubMed

Phurailatpam, Reena; Upreti, Rituraj; Nojin Paul, Siji; Jamema, Swamidas V; Deshpande, Deepak D

2016-01-01

The present study was to investigate the use of MOSFET as an vivo dosimeter for the application of Ir-192 HDR brachytherapy treatments. MOSFET was characterized for dose linearity in the range of 50-1000 cGy, depth dose dependence from 2 to 7 cm, angular dependence. Signal fading was checked for two weeks. Dose linearity was found to be within 2% in the dose range (50-1000 cGy). The response varied within 8.07% for detector-source distance of 2-7 cm. The response of MOSFET with the epoxy side facing the source (0 degree) is the highest and the lowest response was observed at 90 and 270 degrees. Signal was stable during the study period. The detector showed high dose linearity and insignificant fading. But due to angular and depth dependence, care should be taken and corrections must be applied for clinical dosimetry. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Channel Deviation-Based Power Control in Body Area Networks.

PubMed

Van, Son Dinh; Cotton, Simon L; Smith, David B

2018-05-01

Internet enabled body area networks (BANs) will form a core part of future remote health monitoring and ambient assisted living technology. In BAN applications, due to the dynamic nature of human activity, the off-body BAN channel can be prone to deep fading caused by body shadowing and multipath fading. Using this knowledge, we present some novel practical adaptive power control protocols based on the channel deviation to simultaneously prolong the lifetime of wearable devices and reduce outage probability. The proposed schemes are both flexible and relatively simple to implement on hardware platforms with constrained resources making them inherently suitable for BAN applications. We present the key algorithm parameters used to dynamically respond to the channel variation. This allows the algorithms to achieve a better energy efficiency and signal reliability in everyday usage scenarios such as those in which a person undertakes many different activities (e.g., sitting, walking, standing, etc.). We also profile their performance against traditional, optimal, and other existing schemes for which it is demonstrated that not only does the outage probability reduce significantly, but the proposed algorithms also save up to average transmit power compared to the competing schemes.

Generation of powerful microwave pulses by channel power summation of two X-band phase-locked relativistic backward wave oscillators

NASA Astrophysics Data System (ADS)

Xiao, Renzhen; Deng, Yuqun; Chen, Changhua; Shi, Yanchao; Sun, Jun

2018-03-01

We demonstrate both theoretically and experimentally the possibility of the generation of powerful microwave pulses by channel power summation of two X-band phase-locked relativistic backward wave oscillators (RBWOs). A modulated electron beam induced by an external signal can lead the microwave field with an arbitrary initial phase to the same equilibrium phase, which is determined by the initial phase of the external signal. A high-current dual-beam accelerator was built to drive the two RBWOs. An external signal was divided into two channels with an adjusted relative phase and injected into the two RBWOs through two TE10-TEM mode converters. The generated microwaves were combined with a power combiner consisting of two TM01-TE11 serpentine mode converters with a common output. In the experiments, as the input power for each channel was 150 kW, the two RBWOs output 3.1 GW and 3.7 GW, respectively, the jitter of the relative phase of two output microwaves was about 20°, and the summation power from the power combiner is 6.2 GW, corresponding to a combination efficiency of 91%.

Self-channeling of high-power laser pulses through strong atmospheric turbulence

NASA Astrophysics Data System (ADS)

Peñano, J.; Palastro, J. P.; Hafizi, B.; Helle, M. H.; DiComo, G. P.

2017-07-01

We present an unusual example of truly long-range propagation of high-power laser pulses through strong atmospheric turbulence. A form of nonlinear self-channeling is achieved when the laser power is close to the self-focusing power of air and the transverse dimensions of the pulse are smaller than the coherence diameter of turbulence. In this mode, nonlinear self-focusing counteracts diffraction, and turbulence-induced spreading is greatly reduced. Furthermore, the laser intensity is below the ionization threshold so that multiphoton absorption and plasma defocusing are avoided. Simulations show that the pulse can propagate many Rayleigh lengths (several kilometers) while maintaining a high intensity. In the presence of aerosols, or other extinction mechanisms that deplete laser energy, the pulse can be chirped to maintain the channeling.

Proton dose distribution measurements using a MOSFET detector with a simple dose-weighted correction method for LET effects.

PubMed

Kohno, Ryosuke; Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-04-04

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L-shaped bolus. The dose reproducibility, angular dependence and depth-dose response were evaluated using a 190 MeV proton beam. Depth-output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose-weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L-shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors.

Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects

PubMed Central

Hotta, Kenji; Matsuura, Taeko; Matsubara, Kana; Nishioka, Shie; Nishio, Teiji; Kawashima, Mitsuhiko; Ogino, Takashi

2011-01-01

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages. In order to accurately measure dose distributions, we developed a practical method for correcting the MOSFET response to proton beams. The detector was tested by examining lateral dose profiles formed by protons passing through an L‐shaped bolus. The dose reproducibility, angular dependence and depth‐dose response were evaluated using a 190 MeV proton beam. Depth‐output curves produced using the MOSFET detectors were compared with results obtained using an ionization chamber (IC). Since accurate measurements of proton dose distribution require correction for LET effects, we developed a simple dose‐weighted correction method. The correction factors were determined as a function of proton penetration depth, or residual range. The residual proton range at each measurement point was calculated using the pencil beam algorithm. Lateral measurements in a phantom were obtained for pristine and SOBP beams. The reproducibility of the MOSFET detector was within 2%, and the angular dependence was less than 9%. The detector exhibited a good response at the Bragg peak (0.74 relative to the IC detector). For dose distributions resulting from protons passing through an L‐shaped bolus, the corrected MOSFET dose agreed well with the IC results. Absolute proton dosimetry can be performed using MOSFET detectors to a precision of about 3% (1 sigma). A thinner oxide layer thickness improved the LET in proton dosimetry. By employing correction methods for LET dependence, it is possible to measure absolute proton dose using MOSFET detectors. PACS number: 87.56.‐v

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

NASA Astrophysics Data System (ADS)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

Power SEMICONDUCTORS—STATE of Art and Future Trends

NASA Astrophysics Data System (ADS)

Benda, Vitezslav

2011-06-01

The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

NASA Astrophysics Data System (ADS)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

NASA Astrophysics Data System (ADS)

Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

2017-12-01

Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V-1·s-1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal-MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy

PubMed Central

Kumar, A. Sathish; Singh, I. Rabi Raja; Sharma, S. D.; Ravindran, B. Paul

2015-01-01

The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom. PMID:26500397

Macro-channel cooled high power fiber coupled diode lasers exceeding 1.2kW of output power

NASA Astrophysics Data System (ADS)

Koenning, Tobias; Alegria, Kim; Wang, Zuolan; Segref, Armin; Stapleton, Dean; Faßbender, Wilhelm; Flament, Marco; Rotter, Karsten; Noeske, Axel; Biesenbach, Jens

2011-03-01

We report on a new series of fiber coupled diode laser modules exceeding 1.2kW of single wavelength optical power from a 400um / 0.2NA fiber. The units are constructed from passively cooled laser bars as opposed to other comparably powered, commercially available modules that use micro-channel heat-sinks. Micro-channel heat sinks require cooling water to meet demanding specifications and are therefore prone to failures due to contamination and increase the overall cost to operate and maintain the laser. Dilas' new series of high power fiber coupled diode lasers are designed to eliminate micro channel coolers and their associated failure mechanisms. Low-smile soldering processes were developed to maximize the brightness available from each diode laser bar. The diode laser brightness is optimally conserved using Dilas' recently developed propriety laser bar stacking geometry and optics. A total of 24 bars are coupled into a single fiber core using a polarization multiplexing scheme. The modular design permits further power scaling through wavelength multiplexing. Other customer critical features such as industrial grade fibers, pilot beams, fiber interlocks and power monitoring are standard features on these modules. The optical design and the beam parameter calculations will be presented to explain the inherit design trade offs. Results for single and dual wavelengths modules will be presented.

N- and P-type Ca2+ channels are involved in acetylcholine release at a neuroneuronal synapse: only the N-type channel is the target of neuromodulators.

PubMed Central

Fossier, P; Baux, G; Tauc, L

1994-01-01

Cholinergic transmission in an identified neuro-neuronal synapse of the Aplysia buccal ganglion was depressed by application of a partially purified extract of the funnel-web-spider venom (FTx) or of its synthetic analog (sFTx). This specific blocker of voltage-dependent P-type Ca2+ channels did not interfere with the effect of the N-type Ca2+ channel blocker omega-conotoxin, which could further decrease synaptic transmission after a previous application of FTx. Similar results were obtained when the reversal order of application of these two Ca2+ channel blockers was used. Both P- and N-type Ca2+ currents trigger acetylcholine release in the presynaptic neuron. The neuromodulatory effects of FMRF-amide, histamine, and buccalin on transmitter release disappeared after the blockade of the N-type Ca2+ channels but remained still effective in the presence of FTx. These results indicate that only N-type Ca2+ channels appear to be sensitive to the neuromodulators we have identified. PMID:7910963

N- and P-type Ca2+ channels are involved in acetylcholine release at a neuroneuronal synapse: only the N-type channel is the target of neuromodulators.

PubMed

Fossier, P; Baux, G; Tauc, L

1994-05-24

Cholinergic transmission in an identified neuro-neuronal synapse of the Aplysia buccal ganglion was depressed by application of a partially purified extract of the funnel-web-spider venom (FTx) or of its synthetic analog (sFTx). This specific blocker of voltage-dependent P-type Ca2+ channels did not interfere with the effect of the N-type Ca2+ channel blocker omega-conotoxin, which could further decrease synaptic transmission after a previous application of FTx. Similar results were obtained when the reversal order of application of these two Ca2+ channel blockers was used. Both P- and N-type Ca2+ currents trigger acetylcholine release in the presynaptic neuron. The neuromodulatory effects of FMRF-amide, histamine, and buccalin on transmitter release disappeared after the blockade of the N-type Ca2+ channels but remained still effective in the presence of FTx. These results indicate that only N-type Ca2+ channels appear to be sensitive to the neuromodulators we have identified.

Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study

PubMed Central

Schulze, D; Wolff, J; Rottke, D

2014-01-01

Objectives: The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Methods: Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO® head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). Results: The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; −5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; −14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; −16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Conclusions: Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region. PMID:25143020

Effective dose assessment in the maxillofacial region using thermoluminescent (TLD) and metal oxide semiconductor field-effect transistor (MOSFET) dosemeters: a comparative study.

PubMed

Koivisto, J; Schulze, D; Wolff, J; Rottke, D

2014-01-01

The objective of this study was to compare the performance of metal oxide semiconductor field-effect transistor (MOSFET) technology dosemeters with thermoluminescent dosemeters (TLDs) (TLD 100; Thermo Fisher Scientific, Waltham, MA) in the maxillofacial area. Organ and effective dose measurements were performed using 40 TLD and 20 MOSFET dosemeters that were alternately placed in 20 different locations in 1 anthropomorphic RANDO(®) head phantom (the Phantom Laboratory, Salem, NY). The phantom was exposed to four different CBCT default maxillofacial protocols using small (4 × 5 cm) to full face (20 × 17 cm) fields of view (FOVs). The TLD effective doses ranged between 7.0 and 158.0 µSv and the MOSFET doses between 6.1 and 175.0 µSv. The MOSFET and TLD effective doses acquired using four different (FOV) protocols were as follows: face maxillofacial (FOV 20 × 17 cm) (MOSFET, 83.4 µSv; TLD, 87.6 µSv; -5%); teeth, upper jaw (FOV, 8.5 × 5.0 cm) (MOSFET, 6.1 µSv; TLD, 7.0 µSv; -14%); tooth, mandible and left molar (FOV, 4 × 5 cm) (MOSFET, 10.3 µSv; TLD, 12.3 µSv; -16%) and teeth, both jaws (FOV, 10 × 10 cm) (MOSFET, 175 µSv; TLD, 158 µSv; +11%). The largest variation in organ and effective dose was recorded in the small FOV protocols. Taking into account the uncertainties of both measurement methods and the results of the statistical analysis, the effective doses acquired using MOSFET dosemeters were found to be in good agreement with those obtained using TLD dosemeters. The MOSFET dosemeters constitute a feasible alternative for TLDs for the effective dose assessment of CBCT devices in the maxillofacial region.

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

NASA Astrophysics Data System (ADS)

Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

2018-04-01

For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

High-voltage, high-power, solid-state remote power controllers for aerospace applications

NASA Technical Reports Server (NTRS)

Sturman, J. C.

1985-01-01

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy.

PubMed

Haughey, Aisling; Coalter, George; Mugabe, Koki

2011-09-01

The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

NASA Astrophysics Data System (ADS)

Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

2018-06-01

New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

Experience of using MOSFET detectors for dose verification measurements in an end-to-end 192Ir brachytherapy quality assurance system.

PubMed

Persson, Maria; Nilsson, Josef; Carlsson Tedgren, Åsa

Establishment of an end-to-end system for the brachytherapy (BT) dosimetric chain could be valuable in clinical quality assurance. Here, the development of such a system using MOSFET (metal oxide semiconductor field effect transistor) detectors and experience gained during 2 years of use are reported with focus on the performance of the MOSFET detectors. A bolus phantom was constructed with two implants, mimicking prostate and head & neck treatments, using steel needles and plastic catheters to guide the 192 Ir source and house the MOSFET detectors. The phantom was taken through the BT treatment chain from image acquisition to dose evaluation. During the 2-year evaluation-period, delivered doses were verified a total of 56 times using MOSFET detectors which had been calibrated in an external 60 Co beam. An initial experimental investigation on beam quality differences between 192 Ir and 60 Co is reported. The standard deviation in repeated MOSFET measurements was below 3% in the six measurement points with dose levels above 2 Gy. MOSFET measurements overestimated treatment planning system doses by 2-7%. Distance-dependent experimental beam quality correction factors derived in a phantom of similar size as that used for end-to-end tests applied on a time-resolved measurement improved the agreement. MOSFET detectors provide values stable over time and function well for use as detectors for end-to-end quality assurance purposes in 192 Ir BT. Beam quality correction factors should address not only distance from source but also phantom dimensions. Copyright © 2017 American Brachytherapy Society. Published by Elsevier Inc. All rights reserved.

Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang Haiyan; Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001; Cai Wei

2010-06-20

In this paper, we conduct a study of quantum transport models for a two-dimensional nano-size double gate (DG) MOSFET using two approaches: non-equilibrium Green's function (NEGF) and Wigner distribution. Both methods are implemented in the framework of the mode space methodology where the electron confinements below the gates are pre-calculated to produce subbands along the vertical direction of the device while the transport along the horizontal channel direction is described by either approach. Each approach handles the open quantum system along the transport direction in a different manner. The NEGF treats the open boundaries with boundary self-energy defined by amore » Dirichlet to Neumann mapping, which ensures non-reflection at the device boundaries for electron waves leaving the quantum device active region. On the other hand, the Wigner equation method imposes an inflow boundary treatment for the Wigner distribution, which in contrast ensures non-reflection at the boundaries for free electron waves entering the device active region. In both cases the space-charge effect is accounted for by a self-consistent coupling with a Poisson equation. Our goals are to study how the device boundaries are treated in both transport models affects the current calculations, and to investigate the performance of both approaches in modeling the DG-MOSFET. Numerical results show mostly consistent quantum transport characteristics of the DG-MOSFET using both methods, though with higher transport current for the Wigner equation method, and also provide the current-voltage (I-V) curve dependence on various physical parameters such as the gate voltage and the oxide thickness.« less

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

NASA Astrophysics Data System (ADS)

Šermukšnis, E.; Liberis, J.; Matulionis, A.; Avrutin, V.; Ferreyra, R.; Özgür, Ü.; Morkoç, H.

2015-03-01

Real-space transfer of hot electrons is studied in dual-channel GaN-based heterostructure operated at or near plasmon-optical phonon resonance in order to attain a high electron drift velocity at high current densities. For this study, pulsed electric field is applied in the channel plane of a nominally undoped Al0.3Ga0.7N/AlN/{Al0.15Ga0.85N/GaN} structure with a composite channel of Al0.15Ga0.85N/GaN, where the electrons with a sheet density of 1.4 × 1013 cm-2, estimated from the Hall effect measurements, are confined. The equilibrium electrons are situated predominantly in the Al0.15Ga0.85N layer as confirmed by capacitance-voltage experiment and Schrödinger-Poisson modelling. The main peak of the electron density per unit volume decreases as more electrons occupy the GaN layer at high electric fields. The associated decrease in the plasma frequency induces the plasmon-assisted decay of non-equilibrium optical phonons (hot phonons) confirmed by the decrease in the measured hot-phonon lifetime from 0.95 ps at low electric fields down below 200 fs at fields of E \\gt 4 kV cm-1 as the plasmon-optical phonon resonance is approached. The onset of real-space transfer is resolved from microwave noise measurements: this source of noise dominates for E \\gt 8 kV cm-1. In this range of fields, the longitudinal current exceeds the values measured for a mono channel reference Al0.3Ga0.7N/AlN/GaN structure. The results are explained in terms of the ultrafast decay of hot phonons and reduced alloy scattering caused by the real-space transfer in the composite channel.

Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use

DOEpatents

Welch, James D.

2000-01-01

Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

MOSFET analog memory circuit achieves long duration signal storage

NASA Technical Reports Server (NTRS)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Neutron and gamma irradiation effects on power semiconductor switches

NASA Technical Reports Server (NTRS)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

Submicrosecond Power-Switching Test Circuit

NASA Technical Reports Server (NTRS)

Folk, Eric N.

2006-01-01

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.

1988-01-01

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure.

PubMed

Kwak, Hyeon-Tak; Chang, Seung-Bo; Jung, Hyun-Gu; Kim, Hyun-Seok

2018-09-01

In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.

MOSFET-BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection.

PubMed

Yuan, Heng; Kwon, Hyurk-Choon; Yeom, Se-Hyuk; Kwon, Dae-Hyuk; Kang, Shin-Won

2011-10-15

In this study, we propose a novel biosensor based on a gated lateral bipolar junction transistor (BJT) for biomaterial detection. The gated lateral BJT can function as both a BJT and a metal-oxide-semiconductor field-effect transistor (MOSFET) with both the emitter and source, and the collector and drain, coupled. C-reactive protein (CRP), which is an important disease marker in clinical examinations, can be detected using the proposed device. In the MOSFET-BJT hybrid mode, the sensitivity, selectivity, and reproducibility of the gated lateral BJT for biosensors were evaluated in this study. According to the results, in the MOSFET-BJT hybrid mode, the gated lateral BJT shows good selectivity and reproducibility. Changes in the emitter (source) current of the device for CRP antigen detection were approximately 0.65, 0.72, and 0.80 μA/decade at base currents of -50, -30, and -10 μA, respectively. The proposed device has significant application in the detection of certain biomaterials that require a dilution process using a common biosensor, such as a MOSFET-based biosensor. Copyright © 2011 Elsevier B.V. All rights reserved.

Response Of A MOSFET To A Cosmic Ray

NASA Technical Reports Server (NTRS)

Benumof, Reuben; Zoutendyk, John A.

1988-01-01

Theoretical paper discusses response of enhancement-mode metal oxide/semiconductor field-effect transistor to cosmic-ray ion that passes perpendicularly through gate-oxide layers. Even if ion causes no permanent damage, temporary increase of electrical conductivity along track of ion large enough and long enough to cause change in logic state in logic circuit containing MOSFET.

Cognitive CDMA Channelization

DTIC Science & Technology

2010-03-01

proposed scheme for power and code allocation for the secondary user is outlined in Fig. 2. V. SIMULATION STUDIES We consider a primary DS - CDMA system...DATES COVERED (From - To) January 2008 – June 2009 4. TITLE AND SUBTITLE COGNITIVE CDMA CHANNELIZATION 5a. CONTRACT NUMBER In-House 5b. GRANT...TELEPHONE NUMBER (Include area code) N/A Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39.18 Cognitive CDMA Channelization Kanke

High efficiency H6 single-phase transformerless grid-tied PV inverter with proposed modulation for reactive power generation

NASA Astrophysics Data System (ADS)

Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

2017-08-01

Implementation of transformerless inverters in PV grid-tied system offer great benefits such as high efficiency, light weight, low cost, etc. Most of the proposed transformerless inverters in literature are verified for only real power application. Currently, international standards such as VDE-AR-N 4105 has demanded that PV grid-tied inverters should have the ability of controlling a specific amount of reactive power. Generation of reactive power cannot be accomplished in single phase transformerless inverter topologies because the existing modulation techniques are not adopted for a freewheeling path in the negative power region. This paper enhances a previous high efficiency proposed H6 trnasformerless inverter with SiC MOSFETs and demonstrates new operating modes for the generation of reactive power. A proposed pulse width modulation (PWM) technique is applied to achieve bidirectional current flow through freewheeling state. A comparison of the proposed H6 transformerless inverter using SiC MOSFETs and Si MOSFTEs is presented in terms of power losses and efficiency. The results show that reactive power control is attained without adding any additional active devices or modification to the inverter structure. Also, the proposed modulation maintains a constant common mode voltage (CM) during every operating mode and has low leakage current. The performance of the proposed system verifies its effectiveness in the next generation PV system.

Inhibition of N-Type Calcium Channels by Fluorophenoxyanilide Derivatives

PubMed Central

Gleeson, Ellen C.; Graham, Janease E.; Spiller, Sandro; Vetter, Irina; Lewis, Richard J.; Duggan, Peter J.; Tuck, Kellie L.

2015-01-01

A set of fluorophenoxyanilides, designed to be simplified analogues of previously reported ω-conotoxin GVIA mimetics, were prepared and tested for N-type calcium channel inhibition in a SH-SY5Y neuroblastoma FLIPR assay. N-type or Cav2.2 channel is a validated target for the treatment of refractory chronic pain. Despite being significantly less complex than the originally designed mimetics, up to a seven-fold improvement in activity was observed. PMID:25871286

Power management and distribution technology

NASA Astrophysics Data System (ADS)

Dickman, John Ellis

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Power management and distribution technology

NASA Technical Reports Server (NTRS)

Dickman, John Ellis

1993-01-01

Power management and distribution (PMAD) technology is discussed in the context of developing working systems for a piloted Mars nuclear electric propulsion (NEP) vehicle. The discussion is presented in vugraph form. The following topics are covered: applications and systems definitions; high performance components; the Civilian Space Technology Initiative (CSTI) high capacity power program; fiber optic sensors for power diagnostics; high temperature power electronics; 200 C baseplate electronics; high temperature component characterization; a high temperature coaxial transformer; and a silicon carbide mosfet.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

Multiscale modeling and computation of nano-electronic transistors and transmembrane proton channels

NASA Astrophysics Data System (ADS)

Chen, Duan

The miniaturization of nano-scale electronic transistors, such as metal oxide semiconductor field effect transistors (MOSFETs), has given rise to a pressing demand in the new theoretical understanding and practical tactic for dealing with quantum mechanical effects in integrated circuits. In biology, proton dynamics and transport across membrane proteins are of paramount importance to the normal function of living cells. Similar physical characteristics are behind the two subjects, and model simulations share common mathematical interests/challenges. In this thesis work, multiscale and multiphysical models are proposed to study the mechanisms of nanotransistors and proton transport in transmembrane at the atomic level. For nano-electronic transistors, we introduce a unified two-scale energy functional to describe the electrons and the continuum electrostatic potential. This framework enables us to put microscopic and macroscopic descriptions on an equal footing at nano-scale. Additionally, this model includes layered structures and random doping effect of nano-transistors. For transmembrane proton channels, we describe proton dynamics quantum mechanically via a density functional approach while implicitly treat numerous solvent molecules as a dielectric continuum. The densities of all other ions in the solvent are assumed to obey the Boltzmann distribution. The impact of protein molecular structure and its charge polarization on the proton transport is considered in atomic details. We formulate a total free energy functional to include kinetic and potential energies of protons, as well as electrostatic energy of all other ions on an equal footing. For both nano-transistors and proton channels systems, the variational principle is employed to derive nonlinear governing equations. The Poisson-Kohn-Sham equations are derived for nano-transistors while the generalized Poisson-Boltzmann equation and Kohn-Sham equation are obtained for proton channels. Related numerical

Wide-range structurally optimized channel for monitoring the certified power of small-core reactors

NASA Astrophysics Data System (ADS)

Koshelev, A. S.; Kovshov, K. N.; Ovchinnikov, M. A.; Pikulina, G. N.; Sokolov, A. B.

2016-12-01

The results of tests of a prototype version of a channel for monitoring the certified power of small-core reactors performed at the BR-K1 reactor at the All-Russian Scientific Research Institute of Experimental Physics are reported. An SNM-11 counter and commercial KNK-4 and KNK-3 compensated ion chambers were used as neutron detectors in the tested channel, and certified NCMM and CCMM measurement modules controlled by a PC with specialized software were used as measuring instruments. The specifics of metrological assurance of calibration of the channel in the framework of reactor power monitoring are discussed.

Wide-range structurally optimized channel for monitoring the certified power of small-core reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koshelev, A. S., E-mail: alexsander.coshelev@yandex.ru; Kovshov, K. N.; Ovchinnikov, M. A.

The results of tests of a prototype version of a channel for monitoring the certified power of small-core reactors performed at the BR-K1 reactor at the All-Russian Scientific Research Institute of Experimental Physics are reported. An SNM-11 counter and commercial KNK-4 and KNK-3 compensated ion chambers were used as neutron detectors in the tested channel, and certified NCMM and CCMM measurement modules controlled by a PC with specialized software were used as measuring instruments. The specifics of metrological assurance of calibration of the channel in the framework of reactor power monitoring are discussed.

Clinical application of a OneDose MOSFET for skin dose measurements during internal mammary chain irradiation with high dose rate brachytherapy in carcinoma of the breast.

PubMed

Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Mahantshetty, Umesh M; Sarin, Rajiv; Deshpande, Deepak D; Shrivastava, Shyam K

2006-07-21

In our earlier study, we experimentally evaluated the characteristics of a newly designed metal oxide semiconductor field effect transistor (MOSFET) OneDose in-vivo dosimetry system for Ir-192 (380 keV) energy and the results were compared with thermoluminescent dosimeters (TLDs). We have now extended the same study to the clinical application of this MOSFET as an in-vivo dosimetry system. The MOSFET was used during high dose rate brachytherapy (HDRBT) of internal mammary chain (IMC) irradiation for a carcinoma of the breast. The aim of this study was to measure the skin dose during IMC irradiation with a MOSFET and a TLD and compare it with the calculated dose with a treatment planning system (TPS). The skin dose was measured for ten patients. All the patients' treatment was planned on a PLATO treatment planning system. TLD measurements were performed to compare the accuracy of the measured results from the MOSFET. The mean doses measured with the MOSFET and the TLD were identical (0.5392 Gy, 15.85% of the prescribed dose). The mean dose was overestimated by the TPS and was 0.5923 Gy (17.42% of the prescribed dose). The TPS overestimated the skin dose by 9% as verified by the MOSFET and TLD. The MOSFET provides adequate in-vivo dosimetry for HDRBT. Immediate readout after irradiation, small size, permanent storage of dose and ease of use make the MOSFET a viable alternative for TLDs.