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Sample records for n-fe2o3 nanowire films

  1. Manganese oxide nanowires, films, and membranes and methods of making

    SciTech Connect

    Suib, Steven Lawrence; Yuan, Jikang

    2011-02-15

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves and methods of making the same are disclosed. A method for forming nanowires includes hydrothermally treating a chemical precursor composition in a hydrothermal treating solvent to form the nanowires, wherein the chemical precursor composition comprises a source of manganese cations and a source of counter cations, and wherein the nanowires comprise ordered porous manganese oxide-based octahedral molecular sieves.

  2. Manganese oxide nanowires, films, and membranes and methods of making

    DOEpatents

    Suib, Steven Lawrence; Yuan, Jikang

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  3. Tungsten oxide nanowire synthesis from amorphous-like tungsten films.

    PubMed

    Seelaboyina, Raghunandan

    2016-03-18

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis. PMID:26871521

  4. Tungsten oxide nanowire synthesis from amorphous-like tungsten films

    NASA Astrophysics Data System (ADS)

    Seelaboyina, Raghunandan

    2016-03-01

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis.

  5. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    PubMed

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  6. Photoacoustic Characterization of Randomly Oriented Silver Nanowire Films

    NASA Astrophysics Data System (ADS)

    Li Voti, R.; Leahu, G.; Larciprete, M. C.; Sibilia, C.; Bertolotti, M.; Nefedov, I.; Anoshkin, I. V.

    2015-06-01

    In this work, the photoacoustic characterization in the UV/Vis range of randomly oriented silver nanowire films deposited onto either a quartz or polymeric substrate is presented. This study was performed for a set of films differing in both metallic nanowire dimensions, as well as metal content. Samples were prepared starting from suspensions of Ag nanowires in isopropanol (IPA) , differing in both the length and diameter of the nanowires. The obtained films were characterized by scanning electron micrography (SEM) images; thus, the metal filling factor was retrieved with MATLAB software based on a visual method. Following the morphological characterization, both spectrophotometry and the photoacoustic spectroscopy (PAS) technique were employed to investigate in detail the absorbance spectra of silver nanowire films, in order to evidence their peculiar properties in the UV/Vis spectral range. Specifically, this photothermal technique is particularly useful to investigate a film that may exhibit relevant scattering phenomena, as for metallic nanowire films. The obtained experimental results show that the choice of the metal filling factor may affect the absorbance spectra of the resulting mesh.

  7. Silver nanowires/polycarbonate composites for conductive films

    NASA Astrophysics Data System (ADS)

    Moreno, I.; Navascues, N.; Irusta, S.; Santamaría, J.

    2012-09-01

    Silver nanowires (AgNW) with an aspect ratio of 85 were synthesized by a solvothermal process. The AgNW were characterized by SEM and XRD techniques. Nanocomposites of these silver nanowires in a polycarbonate matrix were prepared by simple solution mixing procedure in a concentration filler range 0-4.35 wt%. The obtained films were around 18 μm thick, optical microscopy and SEM characterization showed good dispersion of the nanowires in the polymeric matrix. The obtained composites presented low percolation threshold (0.04 wt%) and the maximum conductivity at 4.35 wt% filler loading was 2.3×10-2 S/cm.

  8. Indium doped zinc oxide nanowire thin films for antireflection and solar absorber coating applications

    SciTech Connect

    Shaik, Ummar Pasha; Krishna, M. Ghanashyam

    2014-04-24

    Indium doped ZnO nanowire thin films were prepared by thermal oxidation of Zn-In metal bilayer films at 500°C. The ZnO:In nanowires are 20-100 nm in diameter and several tens of microns long. X-ray diffraction patterns confirm the formation of oxide and indicate that the films are polycrystalline, both in the as deposited and annealed states. The transmission which is <2% for the as deposited Zn-In films increases to >90% for the ZnO:In nanowire films. Significantly, the reflectance for the as deposited films is < 10% in the region between 200 to 1500 nm and < 2% for the nanowire films. Thus, the as deposited films can be used solar absorber coatings while the nanowire films are useful for antireflection applications. The growth of nanowires by this technique is attractive since it does not involve very high temperatures and the use of catalysts.

  9. Expanding the versatility of silicon carbide thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Luna, Lunet

    Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. However to fully realize SiC in such technologies, the reliability of metal contacts to SiC at high temperatures must be improved and the nanowire growth mechanism must be understood to enable strict control of nanowire crystal structure and orientation. Here, we present a novel metallization scheme, utilizing solid-state graphitization of SiC, to improve the long-term reliability of Pt/Ti contacts to polycrystalline n-type SiC films at high temperature. The metallization scheme includes an alumina protection layer and exhibits low, stable contact resistivity even after long-term (500 hr) testing in air at 450 ºC. We also report the crystal structure and growth mechanism of Ni-assisted silicon carbide nanowires using single-source precursor, methyltrichlorosilane. The effects of growth parameters, such as substrate and temperature, on the structure and morphology of the resulting nanowires will also be presented. Overall, this study provides new insights towards the realization of novel SiC technologies, enabled by advanced electron microscopy techniques located in the user facilities at the Molecular Foundry in Berkeley, California. This work was performed in part at the Molecular Foundry, supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

  10. Direct Conversion of Perovskite Thin Films into Nanowires with Kinetic Control for Flexible Optoelectronic Devices.

    PubMed

    Zhu, Pengchen; Gu, Shuai; Shen, Xinpeng; Xu, Ning; Tan, Yingling; Zhuang, Shendong; Deng, Yu; Lu, Zhenda; Wang, Zhenlin; Zhu, Jia

    2016-02-10

    With significant progress in the past decade, semiconductor nanowires have demonstrated unique features compared to their thin film counterparts, such as enhanced light absorption, mechanical integrity and reduced therma conductivity, etc. However, technologies of semiconductor thin film still serve as foundations of several major industries, such as electronics, displays, energy, etc. A direct path to convert thin film to nanowires can build a bridge between these two and therefore facilitate the large-scale applications of nanowires. Here, we demonstrate that methylammonium lead iodide (CH3NH3PbI3) nanowires can be synthesized directly from perovskite film by a scalable conversion process. In addition, with fine kinetic control, morphologies, and diameters of these nanowires can be well-controlled. Based on these perovskite nanowires with excellent optical trapping and mechanical properties, flexible photodetectors with good sensitivity are demonstrated. PMID:26797488

  11. Direct growth of oxide nanowires on CuOx thin film.

    PubMed

    Kim, Hwansoo; Lee, Byung Kook; An, Ki-Seok; Ju, Sanghyun

    2012-02-01

    Oxide nanowires were directly grown on a CuO(x) thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metal-catalyst-free growth on the CuO(x) thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO(2) and ZnO nanowires were grown as single-crystalline structures just above the CuO(x) thin film. Bottom-gate structural SnO(2) and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6 cm(2) V(-1) s(-1), respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuO(x) thin film. PMID:22214566

  12. Effects of length dispersity and film fabrication on the sheet resistance of copper nanowire transparent conductors

    NASA Astrophysics Data System (ADS)

    Borchert, James W.; Stewart, Ian E.; Ye, Shengrong; Rathmell, Aaron R.; Wiley, Benjamin J.; Winey, Karen I.

    2015-08-01

    Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs.Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected

  13. Effects of alkali treatments on Ag nanowire transparent conductive films

    NASA Astrophysics Data System (ADS)

    Kim, Sunho; Kang, Jun-gu; Eom, Tae-yil; Moon, Bongjin; Lee, Hoo-Jeong

    2016-06-01

    In this study, we employ various alkali materials (alkali metals with different base strengths, and ammonia gas and solution) to improve the conductivity of silver nanowire (Ag NW)-networked films. The alkali treatment appears to remove the surface oxide and improve the conductivity. When applied with TiO2 nanoparticles, the treatment appears more effective as the alkalis gather around wire junctions and help them weld to each other via heat emitted from the reduction reaction. The ammonia solution treatment is found to be quick and aggressive, damaging the wires severely in the case of excessive treatment. On the other hand, the ammonia gas treatment seems much less aggressive and does not damage the wires even after a long exposure. The results of this study highlight the effectiveness of the alkali treatment in improving of the conductivity of Ag NW-networked transparent conductive films.

  14. Preparation of Mesoporous Silica Templated Metal Nanowire Films on Foamed Nickel Substrates

    SciTech Connect

    Campbell, Roger; Kenik, Edward A; Bakker, Martin; Havrilla, George; Montoya, Velma; Shamsuzzoha, Mohammed

    2006-01-01

    A method has been developed for the formation of high surface area nanowire films on planar and three-dimensional metal electrodes. These nanowire films are formed via electrodeposition into a mesoporous silica film. The mesoporous silica films are formed by a sol-gel process using Pluronic tri-block copolymers to template mesopore formation on both planar and three-dimensional metal electrodes. Surface area increases of up to 120-fold have been observed in electrodes containing a templated film when compared to the same types of electrodes without the templated film.

  15. Silver Nanowire Transparent Conductive Films with High Uniformity Fabricated via a Dynamic Heating Method.

    PubMed

    Jia, Yonggao; Chen, Chao; Jia, Dan; Li, Shuxin; Ji, Shulin; Ye, Changhui

    2016-04-20

    The uniformity of the sheet resistance of transparent conductive films is one of the most important quality factors for touch panel applications. However, the uniformity of silver nanowire transparent conductive films is far inferior to that of indium-doped tin oxide (ITO). Herein, we report a dynamic heating method using infrared light to achieve silver nanowire transparent conductive films with high uniformity. This method can overcome the coffee ring effect during the drying process and suppress the aggregation of silver nanowires in the film. A nonuniformity factor of the sheet resistance of the as-prepared silver nanowire transparent conductive films could be as low as 6.7% at an average sheet resistance of 35 Ω/sq and a light transmittance of 95% (at 550 nm), comparable to that of high-quality ITO film in the market. In addition, a mechanical study shows that the sheet resistance of the films has little change after 5000 bending cycles, and the film could be used in touch panels for human-machine interactive input. The highly uniform and mechanically stable silver nanowire transparent conductive films meet the requirement for many significant applications and could play a key role in the display market in a near future. PMID:27054546

  16. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    PubMed

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-01

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors. PMID:26906427

  17. Synthesis of ZnO nanowires for thin film network transistors

    NASA Astrophysics Data System (ADS)

    Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

    2008-08-01

    Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

  18. Enhanced film conductance of silver nanowire-based flexible transparent & conductive networks by bending

    NASA Astrophysics Data System (ADS)

    Xia, Xingda; Yang, Bingchu; Zhang, Xiang; Zhou, Conghua

    2015-07-01

    Bending is usually used to test durability of flexible transparent and conductive films. Due to the large stress incurred by this technique, bending has always been observed to deteriorate conductance of electrodes such as indium tin oxide film. In contrast, we here demonstrate that bending could be used to improve conductance of silver nanowire-based flexible transparent and conductive films. The enhanced conductance is due to improved contact between nanowires, which was favored by the hydrogen bond formed between residential polyvinylpyrrolidone (PVP) on silver nanowire and TiOx nanoparticles pre-coated on the substrate. The enhanced conductance was found to be affected by bending direction; bending towards the substrate not only yielded quicker decrease in sheet resistance, but also showed better film conductance than bending towards the nanowires. Then, with assistance of surface modification of substrate and ultra-long silver nanowires (averaged at 124 μm, maximum at 438 μm), optoelectronic performance of 90.2% (transmittance at 550 nm) and 12.5 Ω sq-1 (sheet resistance) has been achieved by bending. Such performance was better than commercialized flexible ITO films, and even competed with that obtained from thermal annealing at temperature of 200 °C. Moreover, Fourier transfer infrared (FTIR) spectroscopy study showed strong coordination between C=O (heterocyclic ring of PVP) and silver atoms, showing obvious capping behavior of PVP on silver nanowires.

  19. Extraordinarily high conductivity of flexible adhesive films by hybrids of silver nanoparticle–nanowires

    NASA Astrophysics Data System (ADS)

    Muhammed Ajmal, C.; Mol Menamparambath, Mini; Ryeol Choi, Hyouk; Baik, Seunghyun

    2016-06-01

    Highly conductive flexible adhesive (CFA) film was developed using micro-sized silver flakes (primary fillers), hybrids of silver nanoparticle–nanowires (secondary fillers) and nitrile butadiene rubber. The hybrids of silver nanoparticle–nanowires were synthesized by decorating silver nanowires with silver nanoparticle clusters using bifunctional cysteamine as a linker. The dispersion in ethanol was excellent for several months. Silver nanowires constructed electrical networks between the micro-scale silver flakes. The low-temperature surface sintering of silver nanoparticles enabled effective joining of silver nanowires to silver flakes. The hybrids of silver nanoparticle–nanowires provided a greater maximum conductivity (54 390 S cm‑1) than pure silver nanowires, pure multiwalled carbon nanotubes, and multiwalled carbon nanotubes decorated with silver nanoparticles in nitrile butadiene rubber matrix. The resistance change was smallest upon bending when the hybrids of silver nanoparticle–nanowires were employed. The adhesion of the film on polyethylene terephthalate substrate was excellent. Light emitting diodes were successfully wired to the CFA circuit patterned by the screen printing method for application demonstration.

  20. Extraordinarily high conductivity of flexible adhesive films by hybrids of silver nanoparticle-nanowires.

    PubMed

    Ajmal, C Muhammed; Menamparambath, Mini Mol; Choi, Hyouk Ryeol; Baik, Seunghyun

    2016-06-01

    Highly conductive flexible adhesive (CFA) film was developed using micro-sized silver flakes (primary fillers), hybrids of silver nanoparticle-nanowires (secondary fillers) and nitrile butadiene rubber. The hybrids of silver nanoparticle-nanowires were synthesized by decorating silver nanowires with silver nanoparticle clusters using bifunctional cysteamine as a linker. The dispersion in ethanol was excellent for several months. Silver nanowires constructed electrical networks between the micro-scale silver flakes. The low-temperature surface sintering of silver nanoparticles enabled effective joining of silver nanowires to silver flakes. The hybrids of silver nanoparticle-nanowires provided a greater maximum conductivity (54 390 S cm(-1)) than pure silver nanowires, pure multiwalled carbon nanotubes, and multiwalled carbon nanotubes decorated with silver nanoparticles in nitrile butadiene rubber matrix. The resistance change was smallest upon bending when the hybrids of silver nanoparticle-nanowires were employed. The adhesion of the film on polyethylene terephthalate substrate was excellent. Light emitting diodes were successfully wired to the CFA circuit patterned by the screen printing method for application demonstration. PMID:27109551

  1. Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses

    PubMed Central

    2012-01-01

    In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)B substrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing film thickness, the size of the Au nanoparticles increases while the density of the nanoparticles reduces. Furthermore, higher annealing temperature produces larger Au nanoparticles for a fixed film thickness. As expected, the diameters and densities of the as-grown GaAs nanowires catalyzed by these thin Au films reflect these trends. PMID:23095345

  2. Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

    NASA Astrophysics Data System (ADS)

    Amma, Shin-ichi; Tokumoto, Yuki; Edagawa, Keiichi; Shibata, Naoya; Mizoguchi, Teruyasu; Yamamoto, Takahisa; Ikuhara, Yuichi

    2010-05-01

    Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

  3. SiC Nanowire Film Photodetectors: A Promising Candidate Toward High Temperature Photodetectors.

    PubMed

    Chong, Haining; Yang, Huijun; Yang, Weiyou; Zheng, Jinju; Shang, Minghui; Yang, Zuobao; Wei, Guodong; Gao, Fengmei

    2016-04-01

    In this study, UV photodetectors (PDs) based on SiC nanowire films have been successfully prepared by a simple and low-cost drip-coating method followed by sintering at 500 °C. The corresponding electrical characterizations clearly demonstrate that the SiC nanowire based PD devices can be regarded as a promising candidate for UV PDs. The PDs can exhibit the excellent performances of fast, high sensitivity, linearity, and stable response, which can thus achieve on-line monitoring of weak UV light. Furthermore, the SiC nanowire-based PDs enable us to fabricate detectors working under high temperature as high as 150 °C. The high photosensitivity and rapid photoresponse for the PDs can be attributed to the superior single crystalline quality of SiC nanowires and the ohmic contact between the electrodes and nanowires. PMID:27451712

  4. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity

    PubMed Central

    Large, Matthew J.; Burn, Jake; King, Alice A.; Ogilvie, Sean P.; Jurewicz, Izabela; Dalton, Alan B.

    2016-01-01

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures. PMID:27158132

  5. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity.

    PubMed

    Large, Matthew J; Burn, Jake; King, Alice A; Ogilvie, Sean P; Jurewicz, Izabela; Dalton, Alan B

    2016-01-01

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures. PMID:27158132

  6. Predicting the optoelectronic properties of nanowire films based on control of length polydispersity

    NASA Astrophysics Data System (ADS)

    Large, Matthew J.; Burn, Jake; King, Alice A.; Ogilvie, Sean P.; Jurewicz, Izabela; Dalton, Alan B.

    2016-05-01

    We demonstrate that the optoelectronic properties of percolating thin films of silver nanowires (AgNWs) are predominantly dependent upon the length distribution of the constituent AgNWs. A generalized expression is derived to describe the dependence of both sheet resistance and optical transmission on this distribution. We experimentally validate the relationship using ultrasonication to controllably vary the length distribution. These results have major implications where nanowire-based films are a desirable material for transparent conductor applications; in particular when application-specific performance criteria must be met. It is of particular interest to have a simple method to generalize the properties of bulk films from an understanding of the base material, as this will speed up the optimisation process. It is anticipated that these results may aid in the adoption of nanowire films in industry, for applications such as touch sensors or photovoltaic electrode structures.

  7. ZnO/Ag nanowires composite film ultraviolet photoconductive detector

    NASA Astrophysics Data System (ADS)

    Guodong, Yan; Minqiang, Wang; Zhi, Yang

    2015-08-01

    ZnO/Ag nanowires (NWs) film ultraviolet (UV) detector was fabricated by a simple and low-cost solution-processed method. In order to prepare this device, Ag NWs network was first spin-coated on glass substrate as a transparent conducting electrode, then ZnO NWs arrays were grown vertically on the Ag NWs network based on the hydrothermal method. This UV detector exhibited an excellent detection performance with large on/off ratio and short response time. Several process and working parameters were particularly investigated to analyze the relationship between structure and performance, which include growth time of ZnO NWs array, spin speed of Ag NWs network and working temperature. This UV photoconductive detector is based on two kinds of one-dimension nanomaterials, and it was regarded as a compromise between high performance with large area, low voltage and low cost. Project supported by the National Natural Science Foundation of China (Nos. 61176056, 91323303, 91123019), the 111 Program (No. B14040), and the Open Projects from the Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China.

  8. Fabrication and properties of the meander nanowires based on ultra-thin Nb films

    NASA Astrophysics Data System (ADS)

    Zhao, Lu; Jin, Yi-Rong; Li, Jie; Deng, Hui; Zheng, Dong-Ning

    2014-08-01

    We report the fabrication and the study of superconducting properties of ultra-thin Nb superconducting meander nanowires, which can be used as superconducting nanowire single-photon detectors (SNSPDs). The ultra-thin (about 7-nm thick) Nb films are patterned into micro-bridges, and 100-nm wide meander nanowires by using e-beam lithography (EBL). The average transition temperature (Tc) of the nanowires is about 4.8 K and the critical current density jc is about 2.8 × 106 A/cm2. Superconducting characteristics of the specimens at different applied magnetic fields up to 8 T (parallel or perpendicular to the specimen) are systematically investigated. The normalized temperature t (= T/Tc) dependences of the parallel critical field (Hc‖) for both the micro-bridge and the meander nanowire are almost the same, following the Ginzburg and Landau (GL) formalism for ultra-thin films. However, in perpendicular field and in the vicinity of Tc (> 0.95Tc), the critical field Hc‖ of the nanowire exhibits a down-turn curvature nonlinear temperature dependence while the micro-bridge displays a linear temperature dependence. The nonlinear behavior of Hc⊥ in the nanowire is believed to be due to the fact that in the vicinity of Tc the coherence length becomes larger than the line width. Additionally, the localization of carriers in the nanowire could also contribute to the nonlinear behavior. The resistive transitions could be described by the phase-slip model for quasi-one-dimensional system. Moreover, the hysteresis in I-V curve of the meander nanowires can be illustrated by a simple model of localized normal hotspot maintained by Joule heating.

  9. Direct growth of SnO2 nanowires on WOx thin films

    NASA Astrophysics Data System (ADS)

    Lim, Taekyung; Ryu, Seung Yoon; Ju, Sanghyun

    2012-12-01

    Single-crystalline SnO2 nanowires were directly grown on an amorphous WOx thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WOx facilitated the diffusion of SnO2 on the surface of the WOx thin film, and SnO2 nanowires could be uniformly grown from the diffused SnO2. The contact properties between the metallic WOx and a semiconducting SnO2 nanowire were examined. The resistivity of the WOx-SnO2 nanowire contact was found to be approximately 2.6 × 10-5 Ω cm2. This was comparable to the resistivity of a contact between an Al electrode and a SnO2 nanowire with a contact area. A fabricated SnO2 nanowire transistor exhibited an on-current of approximately 386 nA, a threshold voltage of approximately 3.8 V, a subthreshold slope of approximately 0.26 V/dec and a field-effect mobility of approximately 43 cm2 V-1 s-1.

  10. Electrochemically synthesized amorphous and crystalline nanowires: dissimilar nanomechanical behavior in comparison with homologous flat films

    NASA Astrophysics Data System (ADS)

    Zeeshan, M. A.; Esqué-de Los Ojos, D.; Castro-Hartmann, P.; Guerrero, M.; Nogués, J.; Suriñach, S.; Baró, M. D.; Nelson, B. J.; Pané, S.; Pellicer, E.; Sort, J.

    2016-01-01

    The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices.The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires

  11. Metallic oriented nanowires films for infrared radiation manipulation

    NASA Astrophysics Data System (ADS)

    Larciprete, Maria Cristina; Centini, Marco; Voti, Roberto Li; Bertolotti, Mario; Sibilia, Concita

    2016-04-01

    We developed a numerical method to model the infrared spectral properties of metal nanowires on a flat substrate. Homogenization techniques and the transfer matrix method for birefringent layered materials are merged together so as to obtain a simple but effective tool for tailoring and optimizing the infrared properties of the resulting system. Different in-plane orientations can be investigated, ranging from randomly to perfectly aligned nanowires. Furthermore, the model allows the introduction of an off-plane tilt of the nanowires axes, thus increasing designing options. Possible applications such as broad band infrared polarizers, polarizing beam splitter and polarization rotators are discussed.

  12. Scalable alignment and transfer of nanowires in a Spinning Langmuir Film.

    PubMed

    Zhu, Ren; Lai, Yicong; Nguyen, Vu; Yang, Rusen

    2014-10-21

    Many nanomaterial-based integrated nanosystems require the assembly of nanowires and nanotubes into ordered arrays. A generic alignment method should be simple and fast for the proof-of-concept study by a researcher, and low-cost and scalable for mass production in industries. Here we have developed a novel Spinning-Langmuir-Film technique to fulfill both requirements. We used surfactant-enhanced shear flow to align inorganic and organic nanowires, which could be easily transferred to other substrates and ready for device fabrication in less than 20 minutes. The aligned nanowire areal density can be controlled in a wide range from 16/mm(-2) to 258/mm(-2), through the compression of the film. The surface surfactant layer significantly influences the quality of alignment and has been investigated in detail. PMID:25177924

  13. Preparation and Properties of Silver Nanowire-Based Transparent Conductive Composite Films

    NASA Astrophysics Data System (ADS)

    Tian, Ji-Li; Zhang, Hua-Yu; Wang, Hai-Jun

    2016-06-01

    Silver nanowire-based transparent conductive composite films with different structures were successfully prepared using various methods, including liquid polyol, magnetron sputtering and spin coating. The experimental results revealed that the optical transmittance of all different structural composite films decreased slightly (1-3%) compared to pure films. However, the electrical conductivity of all composite films had a great improvement. Under the condition that the optical transmittance was greater than 78% over the wavelength range of 400-800 nm, the AgNW/PVA/AgNW film became a conductor, while the AZO/AgNW/AZO film and the ITO/AgNW/ITO film showed 88.9% and 94% reductions, respectively, for the sheet resistance compared with pure films. In addition, applying a suitable mechanical pressure can improve the conductivity of AgNW-based composite films.

  14. Fabrication and properties of a branched (NH₄)xWO₃ nanowire array film and a porous WO3 nanorod array film.

    PubMed

    Liu, Ya; Zhao, Liang; Su, Jinzhan; Li, Mingtao; Guo, Liejin

    2015-02-18

    We describe the successful fabrication of a three-dimensional branched (NH4)xWO3 nanowire array film on fluorine-doped tin oxide coated glass by a facile one-step hydrothermal method. The porous WO3 nanorod array film formed after heat treatment and recrystallization. Specifically, the branched (NH4)xWO3 nanowire array film has very thin nanowires that were about 10 nm in diameter. The results of an optical and photoelectrochemical test show that the branched (NH4)xWO3 nanowire array film could be used as a near-infrared shielder, while the porous WO3 nanorod array film can be used as a photoanode for water splitting. Moreover, the morphology, structure, and composition of the as-prepared films are revealed, and the related changes caused by heat treatment are discussed in detail. PMID:25623076

  15. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    PubMed

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased. PMID:24922214

  16. Electrochemically synthesized amorphous and crystalline nanowires: dissimilar nanomechanical behavior in comparison with homologous flat films.

    PubMed

    Zeeshan, M A; Esqué-de Los Ojos, D; Castro-Hartmann, P; Guerrero, M; Nogués, J; Suriñach, S; Baró, M D; Nelson, B J; Pané, S; Pellicer, E; Sort, J

    2016-01-21

    The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (ϕ ≈ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices. PMID:26399166

  17. Ultra-Long Crystalline Red Phosphorus Nanowires from Amorphous Red Phosphorus Thin Films.

    PubMed

    Smith, Joshua B; Hagaman, Daniel; DiGuiseppi, David; Schweitzer-Stenner, Reinhard; Ji, Hai-Feng

    2016-09-19

    Heating red phosphorus in sealed ampoules in the presence of a Sn/SnI4 catalyst mixture has provided bulk black phosphorus at much lower pressures than those required for allotropic conversion by anvil cells. Herein we report the growth of ultra-long 1D red phosphorus nanowires (>1 mm) selectively onto a wafer substrate from red phosphorus powder and a thin film of red phosphorus in the present of a Sn/SnI4 catalyst. Raman spectra and X-ray diffraction characterization suggested the formation of crystalline red phosphorus nanowires. FET devices constructed with the red phosphorus nanowires displayed a typical I-V curve similar to that of black phosphorus and a similar mobility reaching 300 cm(2)  V(-1)  s with an Ion /Ioff ratio approaching 10(2) . A significant response to infrared light was observed from the FET device. PMID:27553637

  18. Solution Processing of Ordered Thin Film Nanowire Composites by Magnetic Field Alignment

    NASA Astrophysics Data System (ADS)

    Singer, Jonathan; Pelligra, Candice; Huang, Su; Osuji, Chinedum

    2014-03-01

    Vertically aligned nanowire forests are a desirable geometry for many applications, including as electrodes, heterojunctions, and high surface energy interfaces. Most conventional aligned nanowire structures, however, are generated by methods that require (i) high temperatures, (ii) a specific substrate, or (iii) high cost lithographic techniques. We seek to utilize the magnetic alignment of cobalt-doped zinc oxide nanowires to enable the solution processing of thin films of aligned nanowires on a generalized substrate at a fraction of the cost of other methods. By functionalization of the nanowires with various surface modifications, they can be dispersed in several solvent systems and aligned by a 6 T field. Further, by including polymer in the wire solution, we can both control the areal density and also incorporate additional functionalities to the final composite device. As an example, the use of a conjugated polymer (such as poly(3-hexylthiophene-2,5-diyl) (P3HT)) allows for the final structures to act as inorganic-organic ordered heterojunction solar cells. While final device quality depends on the simultaneous optimization of several key processing parameters, the process does not rely on top-down fabrication or costly materials. Supported by ONR YIP Award N000141210657.

  19. Metal Nanowires: Synthesis, Processing, and Structure-Property Relationships in the Context of Flexible Transparent Conducting Films

    NASA Astrophysics Data System (ADS)

    Rathmell, Aaron R.

    The demand for flat-panel televisions, e-readers, smart-phones, and touch-screens has been increasing over the past few years and will continue to increase for the foreseeable future. Each of these devices contains a transparent conductor, which is usually indium tin oxide (ITO) because of its high transparency and low sheet resistance. ITO films, however, are brittle, expensive, and difficult to deposit, and because of these problems, alternative transparent electrodes are being studied. One cheap and flexible alternative to ITO is films of randomly oriented copper nanowires. We have developed a synthesis to make long, thin, and well-dispersed copper nanowires that can be suspended in an ink and coated onto a substrate to make flexible transparent films. These films are then made conductive by annealing in a hydrogen atmosphere or by a solution processing technique that can be done in air at room temperature. The resulting flexible transparent conducting films display transparencies and sheet resistance values comparable to ITO. Since it is well known that copper oxidizes, we also developed a synthesis to coat the copper nanowires with a layer of nickel in solution. Our measurements indicated that copper nanowires would double their sheet resistance in 3 months, but the sheet resistance of cupronickel nanowire films containing 20 mole% nickel will double in about 400 years. The addition of nickel to the copper nanowires also gave the film a more neutral grey appearance. The nickel coating can also be applied to the copper nanowires after the film is formed via an electroless plating method. To further optimize the properties of our transparent conductors we developed a framework to understand how the dimensions and area coverage of the nanowires affect the overall film properties. To quantify the effect of length on the sheet resistance and transmittance, wires with different lengths but the same diameter were synthesized to make transparent conducting films and

  20. Highly stretchable and conductive silver nanowire thin films formed by soldering nanomesh junctions.

    PubMed

    Chen, Shih-Pin; Liao, Ying-Chih

    2014-10-01

    Silver nanowires (AgNWs) have been widely used for stretchable and foldable conductors due to their percolating network nanostructure. To enhance the mechanical strength of AgNW thin films under extreme stretching conditions, in this study, we utilize a simple chemical reaction to join AgNW network connections. Upon applying a reactive ink over AgNW thin films, silver nanoparticles are preferentially generated over the nanowire junctions and solder the nanomesh structures. The soldered nanostructure reinforces the conducting network and exhibits no obvious change in electrical conductivity in the stretching or rolling process with elongation strains up to 120%. Several examples are also demonstrated to show potential applications of this material in stretchable electronic devices. PMID:25139194

  1. Finite-size scaling in silver nanowire films: design considerations for practical devices

    NASA Astrophysics Data System (ADS)

    Large, Matthew J.; Cann, Maria; Ogilvie, Sean P.; King, Alice A. K.; Jurewicz, Izabela; Dalton, Alan B.

    2016-07-01

    We report the first application of finite-size scaling theory to nanostructured percolating networks, using silver nanowire (AgNW) films as a model system for experiment and simulation. AgNWs have been shown to be a prime candidate for replacing Indium Tin Oxide (ITO) in applications such as capacitive touch sensing. While their performance as large area films is well-studied, the production of working devices involves patterning of the films to produce isolated electrode structures, which exhibit finite-size scaling when these features are sufficiently small. We demonstrate a generalised method for understanding this behaviour in practical rod percolation systems, such as AgNW films, and study the effect of systematic variation of the length distribution of the percolating material. We derive a design rule for the minimum viable feature size in a device pattern, relating it to parameters which can be derived from a transmittance-sheet resistance data series for the material in question. This understanding has direct implications for the industrial adoption of silver nanowire electrodes in applications where small features are required including single-layer capacitive touch sensors, LCD and OLED display panels.We report the first application of finite-size scaling theory to nanostructured percolating networks, using silver nanowire (AgNW) films as a model system for experiment and simulation. AgNWs have been shown to be a prime candidate for replacing Indium Tin Oxide (ITO) in applications such as capacitive touch sensing. While their performance as large area films is well-studied, the production of working devices involves patterning of the films to produce isolated electrode structures, which exhibit finite-size scaling when these features are sufficiently small. We demonstrate a generalised method for understanding this behaviour in practical rod percolation systems, such as AgNW films, and study the effect of systematic variation of the length distribution of

  2. Electromagnetic field redistribution induced selective plasmon driven surface catalysis in metal nanowire-film systems

    PubMed Central

    Pan, Liang; Huang, Yingzhou; Yang, Yanna; Xiong, Wen; Chen, Guo; Su, Xun; Wei, Hua; Wang, Shuxia; Wen, Weijia

    2015-01-01

    For the novel interpretation of Raman spectrum from molecule at metal surface, the plasmon driven surface catalysis (PDSC) reactions have become an interesting topic in the research field of surface enhanced Raman scattering (SERS). In this work, the selective PDSC reactions of p,p’-dimercaptoazobenzene (DMAB) produced from para-aminothiophenol (PATP) or 4-nitrobenzenethiol (4NBT) were demonstrated in the Ag nanowires dimer-Au film systems. The different SERS spectra collected at individual part and adjacent part of the same nanowire-film system pointed out the importance of the electromagnetic field redistribution induced by image charge on film in this selective surface catalysis, which was confirmed by the simulated electromagnetic simulated electro- magnetic field distributions. Our result indicated this electromagnetic field redistribution induced selective surface catalysis was largely affected by the polarization and wavelength of incident light but slightly by the difference in diameters between two nanowires. Our work provides a further understanding of PDSC reaction in metal nanostructure and could be a deep support for the researches on surface catalysis and surface analysis. PMID:26601698

  3. Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

    PubMed Central

    Cayron, Cyril; Den Hertog, Martien; Latu-Romain, Laurence; Mouchet, Céline; Secouard, Christopher; Rouviere, Jean-Luc; Rouviere, Emmanuelle; Simonato, Jean-Pierre

    2009-01-01

    Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour–liquid–solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and high-resolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure with c/a = 12(2/3)1/2, but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping Σ3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work. PMID:22477767

  4. Electromagnetic field redistribution induced selective plasmon driven surface catalysis in metal nanowire-film systems.

    PubMed

    Pan, Liang; Huang, Yingzhou; Yang, Yanna; Xiong, Wen; Chen, Guo; Su, Xun; Wei, Hua; Wang, Shuxia; Wen, Weijia

    2015-01-01

    For the novel interpretation of Raman spectrum from molecule at metal surface, the plasmon driven surface catalysis (PDSC) reactions have become an interesting topic in the research field of surface enhanced Raman scattering (SERS). In this work, the selective PDSC reactions of p,p'-dimercaptoazobenzene (DMAB) produced from para-aminothiophenol (PATP) or 4-nitrobenzenethiol (4NBT) were demonstrated in the Ag nanowires dimer-Au film systems. The different SERS spectra collected at individual part and adjacent part of the same nanowire-film system pointed out the importance of the electromagnetic field redistribution induced by image charge on film in this selective surface catalysis, which was confirmed by the simulated electromagnetic simulated electro- magnetic field distributions. Our result indicated this electromagnetic field redistribution induced selective surface catalysis was largely affected by the polarization and wavelength of incident light but slightly by the difference in diameters between two nanowires. Our work provides a further understanding of PDSC reaction in metal nanostructure and could be a deep support for the researches on surface catalysis and surface analysis. PMID:26601698

  5. Transparent Thin Film Transistors based on Pristine and Doped Indium Oxide Nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Po-Chiang; Shen, Guozhen; Sukcharoenchoke, Saowalak; Zhou, Chongwu

    2009-03-01

    The key to the realization of transparent electronics is the development of transparent thin film transistors (TTFT) with good device performance, in terms of high device mobility, low temperature fabrication, and optical transparency. We present our work on the fabrication of high performance TTFTs using both pristine In2O3 nanowires and doped In2O3 nanowires. In2O3 nanowire TTFTs were made on glass and PET substrates with Al2O3 as gate insulator and ITO source/drain electrodes. These devices showed a transparency of about 80% and n-type transistor performance. The device characteristics exhibit a subthreshold slope of 0.2 V/dec, a current on/off ratio of 10^6, and a field-effect mobility of 514 cm^2V-1S-1. We also fabricated TTFTs wbuilt on Arsenic-doped In2O3 nanowires with a field-effect mobility of 1,183.8 cm^2V-1S-1 without any post-treatments. In addition, we integrated TTFTs with organic light emitting diode (OLED) to make an active matrix organic light emitting diode (AMOLED) display, and thus made an animation by controlling the OLED light output.

  6. Interfacial hydrodynamic drag on nanowires embedded in thin oil films and protein layers.

    PubMed

    Lee, Myung Han; Lapointe, Clayton P; Reich, Daniel H; Stebe, Kathleen J; Leheny, Robert L

    2009-07-21

    We investigate the motion of ferromagnetic nanowires confined to nanometer-scale oil films at an air/aqueous interface in response to the application of external magnetic fields and field gradients. By varying the oil viscosity, film thickness, and wire length, we cover two regimes of response suggested by theory: one where the surface viscosity is expected to dominate the wire's motion and one where the subphase viscosity is expected to dominate [Levine, A. J.; Liverpool, T. B.; MacKintosh, F. C. Phys. Rev. E 2004, 69, 021503]. For wire motion parallel to the long axis of the wire, the observed drag agrees reasonably with theoretical predictions. However, the drag on wires moving perpendicular to their long axis or rotating about a short axis is unexpectedly insensitive to the film properties over the full range of measurements. This behavior is in contrast to the rotational and translational drag on nanowires in molecularly thin protein layers, which follow theoretical expectations. The observations in the oil films, which are explained in terms of the manner in which the wire immerses dynamically in the film and subphase, demonstrate how the effective drag viscosity of an aspherical particle confined to a fluid interface can depend on its direction of motion. PMID:19594180

  7. Nanowires of Fe/multi-walled carbon nanotubes and nanometric thin films of Fe/MgO

    SciTech Connect

    Newman, Alexander; Khatiwada, Suman; Neupane, Suman; Seifu, Dereje

    2015-04-14

    We observed that nanowires of Fe grown in the lumens of multi-walled carbon nanotubes required four times higher magnetic field strength to reach saturation compared to planar nanometric thin films of Fe on MgO(100). Nanowires of Fe and nanometric thin films of Fe both exhibited two fold magnetic symmetries. Structural and magnetic properties of 1-dimensional nanowires and 2-dimensional nanometric films were studied by several magnetometery techniques. The θ-2θ x-ray diffraction measurements showed that a (200) peak of Fe appeared on thin film samples deposited at higher substrate temperatures. In these samples prepared at higher temperatures, lower coercive field and highly pronounced two-fold magnetic symmetry were observed. Our results show that maximum magnetocrystalline anisotropy occurred for sample deposited at 100 °C and it decreased at higher deposition temperatures.

  8. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    SciTech Connect

    Pathirane, M. Iheanacho, B.; Lee, C.-H.; Wong, W. S.; Tamang, A.; Knipp, D.; Lujan, R.

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  9. Diamond nanowires and the insulator-metal transition in ultrananocrystalline diamond films.

    SciTech Connect

    Arenal, R.; Bruno, P.; Miller, D. J.; Bleuel, M.; Lai, J.; Gruen, D. M.

    2007-05-01

    Further progress in the development of the remarkable electrochemical, electron field emission, high-temperature diode, and optical properties of n-type ultrananocrystalline diamond films requires a better understanding of electron transport in this material. Of particular interest is the origin of the transition to the metallic regime observed when about 10% by volume of nitrogen has been added to the synthesis gas. Here, we present data showing that the transition to the metallic state is due to the formation of partially oriented diamond nanowires surrounded by an sp{sup 2}-bonded carbon sheath. These have been characterized by scanning electron microscopy, transmission electron microscopy techniques (high-resolution mode, selected area electron diffraction, and electron-energy-loss spectroscopy), Raman spectroscopy, and small-angle neutron scattering. The nanowires are 80-100 nm in length and consist of {approx}5 nm wide and 6-10 nm long segments of diamond crystallites exhibiting atomically sharp interfaces. Each nanowire is enveloped in a sheath of sp{sup 2}-bonded carbon that provides the conductive path for electrons. Raman spectroscopy on the films coupled with a consideration of plasma chemical and physical processes reveals that the sheath is likely composed of a nanocarbon material resembling in some respects a polymer-like mixture of polyacetylene and polynitrile. The complex interactions governing the simultaneous growth of the diamond core and the sp{sup 2} sheath responsible for electrical conductivity are discussed as are attempts at a better theoretical understanding of the transport mechanism.

  10. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

    PubMed

    Wölz, M; Hauswald, C; Flissikowski, T; Gotschke, T; Fernández-Garrido, S; Brandt, O; Grahn, H T; Geelhaar, L; Riechert, H

    2015-06-10

    Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity. PMID:26001039

  11. Flexible transparent PES/silver nanowires/PET sandwich-structured film for high-efficiency electromagnetic interference shielding.

    PubMed

    Hu, Mingjun; Gao, Jiefeng; Dong, Yucheng; Li, Kai; Shan, Guangcun; Yang, Shiliu; Li, Robert Kwok-Yiu

    2012-05-01

    We have developed a kind of high-yield synthesis strategy for silver nanowires by a two-step injection polyol method. Silver nanowires and polyethylene oxide (PEO) (M(w) = 900,000) were prepared in a homogeneous-coating ink. Wet composite films with different thicknesses were fabricated on a PET substrate by drawn-down rod-coating technology. Silver nanowires on PET substrates present a homogeneous distribution under the assistance of PEO. Then PEO was thermally removed in situ at a relatively low temperature attributed to its special thermal behavior under atmospheric conditions. As-prepared metallic nanowire films on PET substrates show excellent stability and a good combination of conductivity and light transmission. A layer of transparent poly(ethersulfones) (PESs) was further coated on silver nanowire networks by the same coating method to prevent the shedding and corrosion of silver nanowires. Sandwich-structured flexible transparent films were obtained and displayed excellent electromagnetic interference (EMI) shielding effectiveness. PMID:22533864

  12. Finite-size scaling in silver nanowire films: design considerations for practical devices.

    PubMed

    Large, Matthew J; Cann, Maria; Ogilvie, Sean P; King, Alice A K; Jurewicz, Izabela; Dalton, Alan B

    2016-07-14

    We report the first application of finite-size scaling theory to nanostructured percolating networks, using silver nanowire (AgNW) films as a model system for experiment and simulation. AgNWs have been shown to be a prime candidate for replacing Indium Tin Oxide (ITO) in applications such as capacitive touch sensing. While their performance as large area films is well-studied, the production of working devices involves patterning of the films to produce isolated electrode structures, which exhibit finite-size scaling when these features are sufficiently small. We demonstrate a generalised method for understanding this behaviour in practical rod percolation systems, such as AgNW films, and study the effect of systematic variation of the length distribution of the percolating material. We derive a design rule for the minimum viable feature size in a device pattern, relating it to parameters which can be derived from a transmittance-sheet resistance data series for the material in question. This understanding has direct implications for the industrial adoption of silver nanowire electrodes in applications where small features are required including single-layer capacitive touch sensors, LCD and OLED display panels. PMID:27377048

  13. Thermoelectric Properties of Hybrid Thin Films of PEDOT-PSS and Silver Nanowires

    NASA Astrophysics Data System (ADS)

    Yoshida, Akihito; Toshima, Naoki

    2016-06-01

    We report the thermoelectric (TE) properties of organic-inorganic hybrid thin films composed of conductive polymer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS), and inorganic silver nanowire (AgNW). Two kinds of AgNW with different wire length, 3 μm and 27 μm, were used in this study. The AgNW/PEDOT-PSS hybrid films showed an increase in electrical conductivity ( σ) with increase in AgNW concentration. The maximum value of σ obtained in this system was ca. 10,000 S cm-1. The films containing long AgNWs (L-AgNWs) showed higher σ relative to short AgNWs (S-AgNWs) at given concentration, which results from the fact that longer nanowires can easily form a percolated structure. The formation of a percolated structure was confirmed by scanning electron microscopy (SEM) observation. On the other hand, the Seebeck coefficient ( S) of the hybrid films showed the opposite dependence on AgNW concentration. This decrease in S with increasing AgNW concentration is probably because of increase in carrier number due to the AgNWs. These results suggest that the presented organic-inorganic hybrid system is one example where the electrical conductivity and TE properties can be tuned by use of a nanocomposite.

  14. Characterization of NbN films for superconducting nanowire single photon detectors

    SciTech Connect

    Mcdonald, Ross D; Ayala - Valenzuela, Oscar E; Weisse - Bernstein, Nina R; Williamson, Todd L; Hoffbauer, M. A.; Graf, M. J.; Rabin, M. W.

    2011-01-14

    Nanoscopic superconducting meander patterns offer great promise as a new class of cryogenic radiation sensors capable of single photon detection. To realize this potential, control of the superconducting properties on the nanoscale is imperative. To this end, Superconducting Nanowire Single Photon Detectors (SNSPDs) are under development by means Energetic Neutral Atom Beam Lithography and Epitaxy, or ENABLE. ENABLE can growth highly-crystalline, epitaxial thin-film materials, like NbN, at low temperatures; such wide-ranging control of fabrication parameters is enabling the optimization of film properties for single photon detection. T{sub c}, H{sub c2}, {zeta}{sub GL} and J{sub c} of multiple thin films and devices have been studied as a function of growth conditions. The optimization of which has already produced devices with properties rivaling all reports in the existing literature.

  15. Shape control of nickel nanostructures incorporated in amorphous carbon films: From globular nanoparticles toward aligned nanowires

    NASA Astrophysics Data System (ADS)

    El Mel, A. A.; Bouts, N.; Grigore, E.; Gautron, E.; Granier, A.; Angleraud, B.; Tessier, P. Y.

    2012-06-01

    The growth of nickel/carbon nanocomposite thin films by a hybrid plasma process, which combines magnetron sputtering and plasma enhanced chemical vapor deposition, has been investigated. This study has shown that the films consist of nickel-rich nanostructures embedded in an amorphous carbon matrix. The size, the distribution, the density, and the shape of these nanostructures are directly dependent to the total carbon content within the films. At low carbon content (˜28 at. %), dense nanowire array perpendicularly oriented to the surface of the substrate can be fabricated. For an intermediate carbon concentration (˜35 at. %), the nickel phase was organized into elongated nanoparticles. These nanoparticles became spherical when reaching a higher carbon content (˜54 at. %). The extensive structural study allowed the representation of a structure zone diagram, as well as, the development of a scenario describing the growth mechanisms that take place during the deposition of such nanocomposite material.

  16. Autophagy induction by silver nanowires: A new aspect in the biocompatibility assessment of nanocomposite thin films

    SciTech Connect

    Verma, Navin K.; Conroy, Jennifer; Lyons, Philip E.; Coleman, Jonathan; O'Sullivan, Mary P.; Kornfeld, Hardy; Kelleher, Dermot; Volkov, Yuri

    2012-11-01

    Nanomaterials and their enabled products have increasingly been attracting global attention due to their unique physicochemical properties. Among these emerging products, silver nanowire (AgNW)-based thin films are being developed for their promising applications in next generation nanoelectronics and nanodevices. However, serious concerns remain about possible health and safety risks they may pose. Here, we employed a multi-modal systematic biocompatibility assessment of thin films incorporating AgNW. To represent the possible routes of nanomaterial entry during occupational or environmental exposure, we employed four different cell lines of epithelial, endothelial, gastric, and phagocytic origin. Utilizing a cell-based automated image acquisition and analysis procedure in combination with real-time impedance sensing, we observed a low level of cytotoxicity of AgNW, which was dependent on cell type, nanowire lengths, doses and incubation times. Similarly, no major cytotoxic effects were induced by AgNW-containing thin films, as detected by conventional cell viability and imaging assays. However, transmission electron microscopy and Western immunoblotting analysis revealed AgNW-induced autophasosome accumulation together with an upregulation of the autophagy marker protein LC3. Autophagy represents a crucial mechanism in maintaining cellular homeostasis, and our data for the first time demonstrate triggering of such mechanism by AgNW in human phagocytic cells. Finally, atomic force microscopy revealed significant changes in the topology of cells attaching and growing on these films as substrates. Our findings thus emphasize the necessity of comprehensive biohazard assessment of nanomaterials in modern applications and devices and a thorough analysis of risks associated with their possible contact with humans through occupational or environmental exposure. Highlights: ► Thin films containing nanomaterials are subject to increasing contact with humans. ► This

  17. Silver nanowires decorated with silver nanoparticles for low-haze flexible transparent conductive films.

    PubMed

    Menamparambath, Mini Mol; Ajmal, C Muhammed; Kim, Kwang Hee; Yang, Daejin; Roh, Jongwook; Park, Hyeon Cheol; Kwak, Chan; Choi, Jae-Young; Baik, Seunghyun

    2015-01-01

    Silver nanowires have attracted much attention for use in flexible transparent conductive films (TCFs) due to their low sheet resistance and flexibility. However, the haze was too high for replacing indium-tin-oxide in high-quality display devices. Herein, we report flexible TCFs, which were prepared using a scalable bar-coating method, with a low sheet resistance (24.1 Ω/sq at 96.4% transmittance) and a haze (1.04%) that is comparable to that of indium-tin-oxide TCFs. To decrease the haze and maintain a low sheet resistance, small diameter silver nanowires (~20 nm) were functionalized with low-temperature surface-sintering silver nanoparticles (~5 nm) using bifunctional cysteamine. The silver nanowire-nanoparticle ink stability was excellent. The sheet resistance of the TCFs was decreased by 29.5% (from 34.2 to 24.1 Ω/sq) due to the functionalization at a low curing temperature of 85 °C. The TCFs were highly flexible and maintained their stability for more than 2 months and 10,000 bending cycles after coating with a protective layer. PMID:26575970

  18. Silver nanowires decorated with silver nanoparticles for low-haze flexible transparent conductive films

    PubMed Central

    Mol Menamparambath, Mini; Muhammed Ajmal, C.; Hee Kim, Kwang; Yang, Daejin; Roh, Jongwook; Cheol Park, Hyeon; Kwak, Chan; Choi, Jae-Young; Baik, Seunghyun

    2015-01-01

    Silver nanowires have attracted much attention for use in flexible transparent conductive films (TCFs) due to their low sheet resistance and flexibility. However, the haze was too high for replacing indium-tin-oxide in high-quality display devices. Herein, we report flexible TCFs, which were prepared using a scalable bar-coating method, with a low sheet resistance (24.1 Ω/sq at 96.4% transmittance) and a haze (1.04%) that is comparable to that of indium-tin-oxide TCFs. To decrease the haze and maintain a low sheet resistance, small diameter silver nanowires (~20 nm) were functionalized with low-temperature surface-sintering silver nanoparticles (~5 nm) using bifunctional cysteamine. The silver nanowire-nanoparticle ink stability was excellent. The sheet resistance of the TCFs was decreased by 29.5% (from 34.2 to 24.1 Ω/sq) due to the functionalization at a low curing temperature of 85 °C. The TCFs were highly flexible and maintained their stability for more than 2 months and 10,000 bending cycles after coating with a protective layer. PMID:26575970

  19. Silver nanowires decorated with silver nanoparticles for low-haze flexible transparent conductive films

    NASA Astrophysics Data System (ADS)

    Mol Menamparambath, Mini; Muhammed Ajmal, C.; Hee Kim, Kwang; Yang, Daejin; Roh, Jongwook; Cheol Park, Hyeon; Kwak, Chan; Choi, Jae-Young; Baik, Seunghyun

    2015-11-01

    Silver nanowires have attracted much attention for use in flexible transparent conductive films (TCFs) due to their low sheet resistance and flexibility. However, the haze was too high for replacing indium-tin-oxide in high-quality display devices. Herein, we report flexible TCFs, which were prepared using a scalable bar-coating method, with a low sheet resistance (24.1 Ω/sq at 96.4% transmittance) and a haze (1.04%) that is comparable to that of indium-tin-oxide TCFs. To decrease the haze and maintain a low sheet resistance, small diameter silver nanowires (~20 nm) were functionalized with low-temperature surface-sintering silver nanoparticles (~5 nm) using bifunctional cysteamine. The silver nanowire-nanoparticle ink stability was excellent. The sheet resistance of the TCFs was decreased by 29.5% (from 34.2 to 24.1 Ω/sq) due to the functionalization at a low curing temperature of 85 °C. The TCFs were highly flexible and maintained their stability for more than 2 months and 10,000 bending cycles after coating with a protective layer.

  20. Template-free preparation of crystalline Ge nanowire film electrodes via an electrochemical liquid-liquid-solid process in water at ambient pressure and temperature for energy storage.

    PubMed

    Gu, Junsi; Collins, Sean M; Carim, Azhar I; Hao, Xiaoguang; Bartlett, Bart M; Maldonado, Stephen

    2012-09-12

    The direct electrodeposition of crystalline germanium (Ge) nanowire film electrodes from an aqueous solution of dissolved GeO(2) using discrete 'flux' nanoparticles capable of dissolving Ge(s) has been demonstrated. Electrodeposition of Ge at inert electrode substrates decorated with small (<100 nm), discrete indium (In) nanoparticles resulted in crystalline Ge nanowire films with definable nanowire diameters and densities without the need for a physical or chemical template. The Ge nanowires exhibited strong polycrystalline character as-deposited, with approximate crystallite dimensions of 20 nm and a mixed orientation of the crystallites along the length of the nanowire. Energy dispersive spectroscopic elemental mapping of individual Ge nanowires showed that the In nanoparticles remained at the base of each nanowire, indicating good electrical communication between the Ge nanowire and the underlying conductive support. As-deposited Ge nanowire films prepared on Cu supports were used without further processing as Li(+) battery anodes. Cycling studies performed at 1 C (1624 mA g(-1)) indicated the native Ge nanowire films supported stable discharge capacities at the level of 973 mA h g(-1), higher than analogous Ge nanowire film electrodes prepared through an energy-intensive vapor-liquid-solid nanowire growth process. The cumulative data show that ec-LLS is a viable method for directly preparing a functional, high-activity nanomaterials-based device component. The work presented here is a step toward the realization of simple processes that make fully functional energy conversion/storage technologies based on crystalline inorganic semiconductors entirely through benchtop, aqueous chemistry and electrochemistry without time- or energy-intensive process steps. PMID:22900746

  1. Solution processed zinc oxide nanopyramid/silver nanowire transparent network films with highly tunable light scattering properties

    NASA Astrophysics Data System (ADS)

    Mehra, Saahil; Christoforo, Mark G.; Peumans, Peter; Salleo, Alberto

    2013-05-01

    Metal nanowire transparent networks are promising replacements to indium tin oxide (ITO) transparent electrodes for optoelectronic devices. While the transparency and sheet resistance are key metrics for transparent electrode performance, independent control of the film light scattering properties is important to developing multifunctional electrodes for improved photovoltaic absorption. Here we show that controlled incorporation of ZnO nanopyramids into a metal nanowire network film affords independent, highly tunable control of the scattering properties (haze) with minimal effects on the transparency and sheet resistance. Varying the zinc oxide/silver nanostructure ratios prior to spray deposition results in sheet resistances, transmission (600 nm), and haze (600 nm) of 6-30 Ω □-1, 68-86%, and 34-66%, respectively. Incorporation of zinc oxide nanopyramid scattering agents into the conducting nanowire mesh has a negligible effect on mesh connectivity, providing a straightforward method of controlling electrode scattering properties. The decoupling of the film scattering power and electrical characteristics makes these films promising candidates for highly scattering transparent electrodes in optoelectronic devices and can be generalized to other metal nanowire films as well as carbon nanotube transparent electrodes.

  2. Dye sensitized solar cells based on nanowire sculptured thin film titanium dioxide photoanodes

    NASA Astrophysics Data System (ADS)

    Pursel, Sean M.

    Energy harvested from the sun using photovoltaics (PVs) is a renewable resource in high demand. Photovoltaics convert photons into electron-hole pairs which are then separated and used for electrical power. 75 TW of energy arrives from the sun every year onto US soil. Harvesting it all would provide enough energy to power the entire world for more than five years. It is this abundance of energy that makes PVs an attractive alternative to fossil fuels. PVs currently produce 0.15% of the energy consumed in the US. Production needs to grow as the worldwide demand for energy is projected to almost double by 2050. Fundamental and device based PV research have made steady efficiency gains in silicon based devices and thin film devices have started to become commercially viable. However, less expensive devices with suitable efficiency have not been fully developed. Dye sensitized solar cells (DSSCs) are one such device which has been optimized using standard components. However, device efficiency has not increased significantly since DSSCs were first conceived in 1991. Interestingly, none of the standard components are optimized, but act in a synergistic way in the most efficient devices. This research, along with other parallel research, attempts to optimize a single component of DSSCs with the goal of combining efforts to produce a device with increased efficiency. This research attempts to optimize the TiO2 photoanode used in DSSCs in terms of electron collection, dye coverage, light harvesting, and novel electrolyte infiltration by replacing the standard colloidal structure with nanowires deposited using physical vapor deposition at an oblique angle to form sculptured thin films. The results are quantified through standard photovoltaic testing, electrochemical impedance spectroscopy, UV-Vis-NIR spectroscopy, and general materials characterization techniques. The nanowire photoanodes are engineered during deposition using reactive evaporation, substrate heating

  3. Enhanced electroactive properties of polyurethane films loaded with carbon-coated SiC nanowires

    NASA Astrophysics Data System (ADS)

    Guiffard, B.; Guyomar, D.; Seveyrat, L.; Chowanek, Y.; Bechelany, M.; Cornu, D.; Miele, P.

    2009-03-01

    Polyurethane-based nanocomposite films were prepared by incorporating carbon-coated SiC nanowires (SiC@C) into the polymer matrix. Electric field-induced strain measurements revealed that a loading of 0.5 wt% SiC@C increased the strain level by a factor of 1.7 at a moderate field strength (6.5 V µm-1). Current-electric field characteristics and the film thickness dependence of strain demonstrated that the improvement of the electromechanical response was linked to a more pronounced space charge effect in the nanocomposite than in the polymer host. DSC measurements revealed that the level of phase mixing in the PU matrix remained unchanged after SiC@C filling; hence, the nano-objects themselves acted as charge traps.

  4. Enhanced electrochemical performance of Si-Cu-Ti thin films by surface covered with Cu3Si nanowires

    NASA Astrophysics Data System (ADS)

    Xu, Kaiqi; He, Yu; Ben, Liubin; Li, Hong; Huang, Xuejie

    2015-05-01

    Si-Cu-Ti thin films with Cu3Si nanowires on the surface and voids in the Cu layer are fabricated for the first time by magnetron sputtering combined with atomic layer deposition (ALD) of alumina. The formation of the surface Cu3Si nanowires is strongly dependent on the thickness of the coated alumina and cooling rate of the thin films during annealing. The maximum coverage of the surface Cu3Si nanowires is obtained with an alumina thickness of 2 nm and a cooling rate of 1 °C min-1. The electrode based on this thin film shows an excellent capacity retention of more than 900 mAh g-1 and a high columbic efficiency of more than 99% after 100 cycles. The improvement of the electrochemical performance of Si-Cu-Ti thin film electrode is attributed to the surface Cu3Si nanowires which reduce the polarization and inhomogeneous lithiation by formation of a surface conductive network, in addition to the alleviation of volume expansion of Si by voids in the Cu layer during cycling.

  5. ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

    SciTech Connect

    Wang Guoping; Chu Sheng; Zhan Ning; Liu Jianlin; Lin Yuqing; Chernyak, Leonid

    2011-01-24

    ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

  6. Properties of Silver Nanowire/Zinc Oxide Transparent Bilayer Thin Films for Optoelectronic Applications.

    PubMed

    You, Sslimsearom; Park, Yong Seo; Choi, Hyung Wook; Kim, Kyung Hwan

    2015-11-01

    We have investigated electrical, optical and structural properties of silver nanowire (AgNW)/zinc oxide (ZnO) transparent conductive bilayer films for optoelectronic applications. The AgNW/ZnO transparent conductive bilayer films were fabricated using spin-coating and facing target sputtering (FTS) method. The spin-coated the AgNW layer has advantages, such as low resistivity and high transmittance in visible range. However, the spin-coated AgNW layers can be oxidized by natural oxygen. Consequently, the conductivity of AgNW layer was strongly decreased. So, an oxidation prevented layer is necessary. The ZnO thin film layer on the Ag NW layer can be prevented oxidation. In addition, the peeling of spin-coated AgNW layer were prevented the deposited ZnO thin film layer. As the results, the sheet resistance and average transmittance in visible range of AgNW/ZnO transparent bilayer thin films exhibited 34.1 ohm/sq. and 83.46%. PMID:26726570

  7. Fabrication of superconducting nanowires from ultrathin MgB{sub 2} films via focused ion beam milling

    SciTech Connect

    Zhang, Chen; Wang, Da; Liu, Zheng-Hao; Zhang, Yan; Ma, Ping; Feng, Qing-Rong; Wang, Yue Gan, Zi-Zhao

    2015-02-15

    High quality superconducting nanowires were fabricated from ultrathin MgB{sub 2} films by a focused ion beam milling technique. The precursor MgB{sub 2} films in 10 nm thick were grown on MgO substrates by using a hybrid physical-chemical vapor deposition method. The nanowires, in widths of about 300-600 nm and lengths of 1 or 10 μm, showed high superconducting critical temperatures (T{sub c}’s) above 34 K and narrow superconducting transition widths (ΔT{sub c}’s) of 1-3 K. The superconducting critical current density J{sub c} of the nanowires was above 5 × 10{sup 7} A/cm{sup 2} at 20 K. The high T{sub c}, narrow ΔT{sub c}, and high J{sub c} of the nanowires offered the possibility of making MgB{sub 2}-based nano-devices such as hot-electron bolometers and superconducting nanowire single-photon detectors with high operating temperatures at 15-20 K.

  8. TiO{sub 2} nanotube, nanowire, and rhomboid-shaped particle thin films fixed on a titanium metal plate

    SciTech Connect

    Inoue, Yuko; Noda, Iwao; Torikai, Toshio; Watari, Takanori; Hotokebuchi, Takao; Yada, Mitsunori

    2010-01-15

    Titanium dioxide thin films having various nanostructures could be formed by various treatments on sodium titanate nanotube thin films approximately 5 {mu}m thick fixed on titanium metal plates. Using an aqueous solution with a lower hydrochloric acid concentration (0.01 mol/L) and a higher reaction temperature (90 deg. C) than those previously employed, we obtained a hydrogen titanate nanotube thin film fixed onto a titanium metal plate by H{sup +} ion-exchange treatment of the sodium titanate nanotube thin film. Calcination of hydrogen titanate nanotube thin films yielded porous thin films consisting of anatase nanotubes, anatase nanowires, and anatase nanoparticles grown directly from the titanium metal plate. H{sup +} ion-exchange treatment of sodium titanate nanotube thin films at 140 deg. C resulted in porous thin films consisting of rhomboid-shaped anatase nanoparticles. - Graphical abstract: Titanium dioxide nanotube, nanowire, and rhombic particle thin films could be formed by various treatments on a sodium titanate nanotube thin film fixed on a titanium metal plate.

  9. Investigation of optimal silver nanowires film as conductive wires for LED

    NASA Astrophysics Data System (ADS)

    Wu, I. C.; Yang, T. L.; Pan, C. T.; Chen, Y. C.; Hung, K. H.

    2015-03-01

    In the study, the Polyol reduction process was used to fabricate silver nanowires (AgNWs). In the experiment, the ratio of PVP/Ag, silver seed, AgNO3 and the amount of ethylene glycol (EG) were adopted to design orthogonal array with a constant temperature and heating time and the synthesis parameters of AgNWs were obtained. Therefore, the optimal AgNWs solution was obtained, followed by centrifuging to obtain AgNWs which were used to fabricate AgNWs film. The scanning electron microscope (SEM), Fourier Transform Infrared Spectroscope (FTIR), Energy Dispersive Spectrometer (EDS) and four-point probe were used to measure the sheet resistant and transmittance of AgNWs film. Moreover, the AgNWs film was adopted to be the conductive wires of LED. From the experiment results, the synthesis parameter of 15ml EG, 0.01g AgCl, ratio 2 of PVP/Ag and 0.22g AgNO3 could be used to fabricate optimal AgNWs with 45nm average diameter, 5μm average length and aspect ratio of 110. The sheet resistance and transmittance of film fabricated by centrifuged AgNWs was 0.1252 Ω/sq and 70%, respectively. Furthermore, the luminance of LED with conductive wires made of AgNWs film was better than that made of commercial silver plastic. In the future, the AgNWs film can be broadly applied to the conductive films of touch electric products, LCD display and solar panels.

  10. Growth and characterization of GaAs nanowires on carbon nanotube composite films: toward flexible nanodevices.

    PubMed

    Mohseni, Parsian K; Lawson, Gregor; Couteau, Christophe; Weihs, Gregor; Adronov, Alex; LaPierre, Ray R

    2008-11-01

    Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently employed for the growth of GaAs nanowires (NWs) by the vapor-liquid-solid process in a gas source molecular beam epitaxy system. The process resulted in the dense growth of GaAs NWs across the entire surface of the single-walled nanotube (SWNT) films. The NWs, which were orientated in a variety of angles with respect to the SWNT films, ranged in diameter between 20 to 200 nm, with heights up to 2.5 microm. Transmission electron microscopy analysis of the NW-SWNT interface indicated that NW growth was initiated upon the surface of the nanotube composite films. Photoluminescence characterization of a single NW specimen showed high optical quality. Rectifying asymmetric current-voltage behavior was observed from contacted NW ensembles and attributed to the core-shell pn-junction within the NWs. Potential applications of such novel hybrid architectures include flexible solar cells, displays, and sensors. PMID:18954120

  11. Nano-Welding of Ag Nanowires Using Rapid Thermal Annealing for Transparent Conductive Films.

    PubMed

    Oh, Jong Sik; Oh, Ji Soo; Shin, Jae Hee; Yeom, Geun Young; Kim, Kyong Nam

    2015-11-01

    Ag nanowire (NW) films obtained by the spraying the Ag NWs on the substrates were nano-welded by rapid thermal annealing (RTA) process and the effect of RTA process on the change of sheet resistance and optical transmittance of the Ag NW films was investigated. The increased number of Ag NW sprays on the substrate decreased the sheet resistance but also decreased the optical transmittance. By the annealing for 60 sec in a nitrogen environment to 225-250 degrees C, the sheet resistance of Ag NW film could be decreased to about 50%, even though it was accompanied by the slight decrease of optical transmittance less than 5%. The decrease of sheet resistance was related to the nano-welding of the Ag NW junctions and the slight decrease of optical transmittance was related local melting of the Ag NWs and spreading on the substrate surface. Through the nano-welding by RTA process, the Ag NW film with the sheet resistance of -20 Ω/sq. and the optical transmittance of 93% could be obtained. PMID:26726568

  12. Plane wave scattering from a plasmonic nanowire-film system with the inclusion of non-local effects.

    PubMed

    Trivedi, Rahul; Sharma, Yashna; Dhawan, Anuj

    2015-10-01

    In this paper we present a theoretical analysis of the electromagnetic response of a plasmonic nanowire-film system. The analytical solution accounts for both the dispersive as well as non-local nature of the plasmonic media. The physical structure comprises of a plasmonic nanowire made of a plasmonic metal such as gold or silver placed over a plasmonic film of the same material. Such a nanostructure exhibits a spectrum that is extremely sensitive to various geometric parameters such as spacer thickness and nanowire radius, which makes it favorable for various sensing applications. The non-locality of the plasmonic medium, which can be captured using the hydrodynamic model, significantly affects the resonant wavelength of this system for structures of small dimensions (~ less than 5 nm gap between the nanowire and the film). We present an analytical method that can be used to predict the effect of non-locality on the resonances of the system. To validate the analytical method, we also report a comparison of our analytical solution with a numerical Finite Difference Time Domain analysis (FDTD) of the same structure with the plasmonic medium being treated as local in nature. PMID:26480121

  13. Ultra-thin superconducting film coated silicon nitride nanowire resonators for low-temperature applications

    NASA Astrophysics Data System (ADS)

    Sebastian, Abhilash; Zhelev, Nikolay; de Alba, Roberto; Parpia, Jeevak

    We demonstrate fabrication of high stress silicon nitride nanowire resonators with a thickness and width of less than 50 nm intended to be used as probes for the study of superfluid 3He. The resonators are fabricated as doubly-clamped wires/beams using a combination of electron-beam lithography and wet/dry etching techniques. We demonstrate the ability to suspend (over a trench of depth ~8 µm) wires with a cross section as small as 30 nm, covered with a 20 nm superconducting film, and having lengths up to 50 µm. Room temperature resonance measurements were carried out by driving the devices using a piezo stage and detecting the motion using an optical interferometer. The results show that metalizing nano-mechanical resonators not only affects their resonant frequencies but significantly reduce their quality factor (Q). The devices are parametrically pumped by modulating the system at twice its fundamental resonant frequency, which results in observed amplification of the signal. The wires show self-oscillation with increasing modulation strength. The fabricated nanowire resonators are intended to be immersed in the superfluid 3He. By tracking the resonant frequency and the Q of the various modes of the wire versus temperature, we aim to probe the superfluid gap structure.

  14. Facile preparation of transparent and conductive polymer films based on silver nanowire/polycarbonate nanocomposites

    NASA Astrophysics Data System (ADS)

    Moreno, Ivan; Navascues, Nuria; Arruebo, Manuel; Irusta, Silvia; Santamaria, Jesus

    2013-07-01

    Silver nanowires (AgNW) synthesized by a solvothermal method were incorporated into a polycarbonate matrix by a solution mixing procedure. Films with a thickness around 18 μm were obtained, showing a good distribution of the wires within the polymer matrix. The thermal stability of the polymer matrix increased significantly, with the main decomposition peak shifting up to 74 ° C for an AgNW loading of 4.35 wt%. The percolation threshold was obtained at very low AgNW content (0.04 wt%), and the composite electrical conductivity at the maximum loading (4.35 wt%) was 41.3 Ω cm. Excellent transparency was obtained at the percolation threshold, with negligible reduction in the transmittance of the polymer matrix (from 88.2 to 87.6% at 0.04 wt% loading of AgNW). In addition, the polymer matrix protected the silver nanowires from oxidation, as demonstrated by the XPS analysis.

  15. Facile preparation of transparent and conductive polymer films based on silver nanowire/polycarbonate nanocomposites.

    PubMed

    Moreno, Ivan; Navascues, Nuria; Arruebo, Manuel; Irusta, Silvia; Santamaria, Jesus

    2013-07-12

    Silver nanowires (AgNW) synthesized by a solvothermal method were incorporated into a polycarbonate matrix by a solution mixing procedure. Films with a thickness around 18 μm were obtained, showing a good distribution of the wires within the polymer matrix. The thermal stability of the polymer matrix increased significantly, with the main decomposition peak shifting up to 74 ° C for an AgNW loading of 4.35 wt%. The percolation threshold was obtained at very low AgNW content (0.04 wt%), and the composite electrical conductivity at the maximum loading (4.35 wt%) was 41.3 Ω cm. Excellent transparency was obtained at the percolation threshold, with negligible reduction in the transmittance of the polymer matrix (from 88.2 to 87.6% at 0.04 wt% loading of AgNW). In addition, the polymer matrix protected the silver nanowires from oxidation, as demonstrated by the XPS analysis. PMID:23743565

  16. Fast and enhanced broadband photoresponse of a ZnO nanowire array/reduced graphene oxide film hybrid photodetector from the visible to the near-infrared range.

    PubMed

    Liu, Hao; Sun, Qi; Xing, Jie; Zheng, Zhiyuan; Zhang, Zhili; Lü, Zhiqing; Zhao, Kun

    2015-04-01

    In the present work, a ZnO nanowire array/reduced graphene oxide film hybrid nanostructure was realized, and the photovoltaic responses from the visible to the near-infrared range were investigated. Compared with the pure ZnO nanowire array and rGO thin film, the hybrid composite exhibited a fast and greatly enhanced broadband photovoltaic response that resulted from the formation of interfacial Schottky junctions between ZnO and rGO. PMID:25768384

  17. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  18. Spontaneous shape transition of thin films into ZnO nanowires with high structural and optical quality.

    PubMed

    Guillemin, Sophie; Sarigiannidou, Eirini; Appert, Estelle; Donatini, Fabrice; Renou, Gilles; Bremond, Georges; Consonni, Vincent

    2015-10-28

    ZnO nanowires are usually formed by physical and chemical deposition techniques following the bottom-up approach consisting in supplying the reactants on a nucleation surface heated at a given temperature. We demonstrate an original alternative approach for the formation of ZnO nanowire arrays with high structural and optical quality, which is based on the spontaneous transformation of a ZnO thin film deposited by sol-gel process following a simple annealing. The development of these ZnO nanowires occurs through successive shape transitions, including the intermediate formation of pyramid-shaped islands. Their nucleation under near-equilibrium conditions is expected to be governed by thermodynamic considerations via the total free energy minimization related to the nanowire shape. It is further strongly assisted by the drastic reordering of the matter and by recrystallization phenomena through the massive transport of zinc and oxygen atoms towards the localized growth areas. The spontaneous shape transition process thus combines the easiness and low-cost of sol-gel process and simple annealing with the assets of the vapor phase deposition techniques. These findings cast a light on the fundamental mechanisms driving the spontaneous formation of ZnO nanowires and, importantly, reveal the great technological potential of the spontaneous shape transition process as a promising alternative approach to the more usual bottom-up approach. PMID:26416227

  19. Nanowire-organic thin film transistor integration and scale up towards developing sensor array for biomedical sensing applications

    NASA Astrophysics Data System (ADS)

    Kumar, Prashanth S.; Hankins, Phillip T.; Rai, Pratyush; Varadan, Vijay K.

    2010-04-01

    Exploratory research works have demonstrated the capability of conducting nanowire arrays in enhancing the sensitivity and selectivity of bio-electrodes in sensing applications. With the help of different surface manipulation techniques, a wide range of biomolecules have been successfully immobilized on these nanowires. Flexible organic electronics, thin film transistor (TFT) fabricated on flexible substrate, was a breakthrough that enabled development of logic circuits on flexible substrate. In many health monitoring scenarios, a series of biomarkers, physical properties and vital signals need to be observed. Since the nano-bio-electrodes are capable of measuring all or most of them, it has been aptly suggested that a series of electrode (array) on single substrate shall be an excellent point of care tool. This requires an efficient control system for signal acquisition and telemetry. An array of flexible TFTs has been designed that acts as active matrix for controlled switching of or scanning by the sensor array. This array is a scale up of the flexible organic TFT that has been fabricated and rigorously tested in previous studies. The integration of nanowire electrodes to the organic electronics was approached by growing nanowires on the same substrate as TFTs and fl ip chip packaging, where the nanowires and TFTs are made on separate substrates. As a proof of concept, its application has been explored in various multi-focal biomedical sensing applications, such as neural probes for monitoring neurite growth, dopamine, and neuron activity; myocardial ischemia for spatial monitoring of myocardium.

  20. Change of the topology of a superconducting thin film electromagnetically coupled with an array of ferromagnetic nanowires

    NASA Astrophysics Data System (ADS)

    Trezza, M.; Cirillo, C.; Dolgiy, A. L.; Redko, S. V.; Bondarenko, V. P.; Andreyenka, A. V.; Danilyuk, A. L.; Prischepa, S. L.; Attanasio, C.

    2016-01-01

    We report on the superconducting properties of a Nb thin film deposited, with an interleaved insulating layer to avoid the proximity effect, on an array of ferromagnetic (Ni) nanowires embedded in a porous template. By investigating the T c (H) phase boundary and by measuring V(I) characteristics and critical currents as a function of the applied magnetic field, we find that the Nb film exhibits properties similar to those of a network of one-dimensional superconducting nanowires. We attribute this behavior to the stray fields of the magnetic dipoles, which create an almost regular lattice of normal regions in the superconductor, ultimately changing its topology. Furthermore, there is evidence that the magnetic pinning of vortices is negligible in this structure.

  1. Growth of vertically aligned one-dimensional ZnO nanowire arrays on sol-gel derived ZnO thin films

    NASA Astrophysics Data System (ADS)

    Kitazawa, Nobuaki; Aono, Masami; Watanabe, Yoshihisa

    2014-11-01

    Vertically aligned one-dimensional ZnO nanowire arrays have been synthesized by a hydrothermal method on sol-gel derived ZnO films. Sol-gel derived ZnO films and corresponding ZnO nanowire arrays have been characterized by X-ray diffraction and field-emission scanning electron microscopy. The effect of sol-gel derived ZnO film surface on the morphology of ZnO nanowire arrays has been investigated. The authors suggest from our investigation that sol-gel derived ZnO films affect the growth of one-dimensional ZnO nanostructures. Not only crystalline ZnO films but also amorphous ones can act as a scaffold for ZnO nucleus. Tilted ZnO micro-rods are grown on ZnO gel films, whereas vertically aligned ZnO nanowire arrays are grown on nanometer-sized ZnO grains. The average diameter of ZnO nanowire arrays are correlated strongly with the grain size of sol-gel derived ZnO films.

  2. Highly sensitive broadband flexible photodetectors based on a blend film with zinc octaethylporphyrin long nanowires embedded in an insulating polymer

    NASA Astrophysics Data System (ADS)

    Yang, Jia-Mei; Wang, Feng-Xia; Pan, Ge-Bo

    2016-01-01

    Blend films with long nanowires of zinc octaethylporphyrin (ZnOEP) embedded in an insulating polymer of poly(methyl methacrylate) (PMMA) have been successfully fabricated by a one-step spin-coating process. Concerning photoactive blends based on small-molecule semiconductors, this is quite a novel strategy and allows us to greatly reduce the issues related to low device performance, such as phase-separation, poor connectivity of the semiconducting layer, and higher densities of interfacial defects. Intensive studies on the correlation between the film morphology and device performance have revealed that excellent photodetector performance is derived from efficient charge transport and good connectivity observed in highly crystalline, interconnected ZnOEP nanowires embedded in an insulating PMMA matrix. To the best of our knowledge, this is the first demonstration of a blend-film-based organic photodetector, which exhibits high sensitivity, high stability, high Ion/Ioff ratio, excellent mechanical flexibility, and a broadband responsivity region extending up to 1050 nm. The unique characteristics of facile fabrication, high sensitivity, excellent mechanical stability, and broadband responsivity can make the blend film of ZnOEP and PMMA promising in large-area flexible photodetectors.Blend films with long nanowires of zinc octaethylporphyrin (ZnOEP) embedded in an insulating polymer of poly(methyl methacrylate) (PMMA) have been successfully fabricated by a one-step spin-coating process. Concerning photoactive blends based on small-molecule semiconductors, this is quite a novel strategy and allows us to greatly reduce the issues related to low device performance, such as phase-separation, poor connectivity of the semiconducting layer, and higher densities of interfacial defects. Intensive studies on the correlation between the film morphology and device performance have revealed that excellent photodetector performance is derived from efficient charge transport and

  3. Plane wave scattering from a plasmonic nanowire array spacer-separated from a plasmonic film

    NASA Astrophysics Data System (ADS)

    Thomas, Arun; Trivedi, Rahul; Dhawan, Anuj

    2016-06-01

    In this paper, we present a theoretical analysis of the electromagnetic response of a plasmonic nanowire–spacer–plasmonic film system. The analytical solution presented in this paper is a full-wave solution, which is used to compute the fields scattered by the plasmonic nanostructure system on illumination by a plane electromagnetic wave. The physical structure comprises of an array of plasmonic nanowires made of a plasmonic metal such as gold or silver placed over a plasmonic film of the same material and separated from it by a dielectric spacer such as silica or alumina. Such a nanostructure exhibits a spectrum that is extremely sensitive to various geometric and electromagnetic parameters such as spacer thickness and spacer refractive index, which makes it favourable for various sensing applications such as chemical and biological sensing, strain sensing, position sensing, vibration sensing, and thickness sensing. We report a comparison of our analytical solution with a numerical rigorous coupled wave analysis of the same structure with the plasmonic medium being treated as local in nature.

  4. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method.

    PubMed

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  5. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    PubMed Central

    2014-01-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films. PMID:25349554

  6. Formation of silicon nanowire packed films from metallurgical-grade silicon powder using a two-step metal-assisted chemical etching method

    NASA Astrophysics Data System (ADS)

    Ouertani, Rachid; Hamdi, Abderrahmen; Amri, Chohdi; Khalifa, Marouan; Ezzaouia, Hatem

    2014-10-01

    In this work, we use a two-step metal-assisted chemical etching method to produce films of silicon nanowires shaped in micrograins from metallurgical-grade polycrystalline silicon powder. The first step is an electroless plating process where the powder was dipped for few minutes in an aqueous solution of silver nitrite and hydrofluoric acid to permit Ag plating of the Si micrograins. During the second step, corresponding to silicon dissolution, we add a small quantity of hydrogen peroxide to the plating solution and we leave the samples to be etched for three various duration (30, 60, and 90 min). We try elucidating the mechanisms leading to the formation of silver clusters and silicon nanowires obtained at the end of the silver plating step and the silver-assisted silicon dissolution step, respectively. Scanning electron microscopy (SEM) micrographs revealed that the processed Si micrograins were covered with densely packed films of self-organized silicon nanowires. Some of these nanowires stand vertically, and some others tilt to the silicon micrograin facets. The thickness of the nanowire films increases from 0.2 to 10 μm with increasing etching time. Based on SEM characterizations, laser scattering estimations, X-ray diffraction (XRD) patterns, and Raman spectroscopy, we present a correlative study dealing with the effect of the silver-assisted etching process on the morphological and structural properties of the processed silicon nanowire films.

  7. The wavelength dependent photovoltaic effects caused by two different mechanisms in carbon nanotube film/CuO nanowire array heterodimensional contacts

    SciTech Connect

    Xu Jia; Xu Jinliang; Sun Jialin; Wei Jinquan

    2012-06-18

    Hetrodimensional contacts were fabricated by coating double-walled carbon nanotube (CNT) films on CuO nanowire arrays. Wavelength dependent photovoltaic effects by irradiating the devices with 405, 532, and 1064 nm lasers were observed. Two possible mechanisms responsible for the observed results were discussed. Photoexcitations within CuO nanowires and Schottky barriers in the heterojunctions dominate the photovoltaics in the 405 and 532 nm cases. For the 1064 nm case, the photovoltaic is the result of the excitation within the CNTs and of the heterodimensionality effect. Control experiments on CNT film/CuO granular film hetrodimensional contacts further show the relationship between these two mechanisms.

  8. A MEMS based acetone sensor incorporating ZnO nanowires synthesized by wet oxidation of Zn film

    NASA Astrophysics Data System (ADS)

    Behera, Bhagaban; Chandra, Sudhir

    2015-01-01

    In this work, we report a simple and efficient method for synthesis of ZnO nanowires by thermal oxidation of Zn film and their integration with MEMS technologies to fabricate a sensor for acetone vapour detection. ZnO nanowires were prepared by thermal oxidation of sputter deposited Zn film. The nanostructured ZnO was characterized by x-ray diffraction, a scanning electron microscope and room temperature photoluminescence measurements. The ZnO nanowires synthesis process was integrated with MEMS technologies to obtain a sensor for volatile organic compounds, incorporating an on-chip Ni microheater and an interdigited electrode structure. To reduce the heat loss from the on-chip microheater, the sensor was made on a thin silicon diaphragm obtained via a modified reactive ion etching process. This resulted in considerable power saving during sensor operation. For this, a three-mask process was used. The performance of the microheater was simulated on COMSOL and validated experimentally. The sensor has been tested for acetone vapour sensing and the operating parameters were optimized. The sensor has the ability to detect acetone vapour at 5 parts per million (ppm) concentrations when operated at 100 °C. The sensor consumed only 36 mW power and showed a high-sensitivity value of 26.3% for 100 ppm of acetone vapour.

  9. Effect of hydrogen plasma irradiation of catalyst films on growth of carbon nanotubes filled with iron nanowires

    SciTech Connect

    Sato, Hideki Kubonaka, Nobuo; Nagata, Atsushi; Fujiwara, Yuji

    2014-03-15

    Carbon nanotubes filled with iron (Fe-filled CNTs) show shape anisotropy on account of the high aspect ratio of magnetic nanowires, and are promising candidates for various applications, such as magnetic recording media, probes for scanning force microscopy, and medical treatment for cancer. The ability to appropriately control the magnetic properties of CNTs for those applications is desirable. In this study, the authors investigated magnetic properties of Fe-filled CNTs synthesized by thermal chemical vapor deposition for the purpose of tuning their coercivity. Here, the authors implemented hydrogen plasma irradiation of catalyst film that was previously deposited on a substrate as a catalyst layer. This treatment activates the catalyst film and thus enhances the growth of the Fe-filled CNTs. It was confirmed that the H{sub 2} plasma irradiation enhances the growth of the CNTs in terms of increasing their length and diameter compared to CNTs without irradiation. On the other hand, the coercivity of Fe-filled CNTs dropped to approximately half of those without H{sub 2} plasma irradiation. This is probably due to a decrease in the aspect ratio of the Fe nanowires, which results from the increase in their diameter. Furthermore, the crystal structure of the Fe nanowires may affect the coercivity.

  10. Co-assembled thin films of Ag nanowires and functional nanoparticles at the liquid-liquid interface by shaking

    NASA Astrophysics Data System (ADS)

    Zhang, Shao-Yi; Liu, Jian-Wei; Zhang, Chuan-Ling; Yu, Shu-Hong

    2013-05-01

    In this paper, we report the fabrication of co-assembled thin films composed of silver nanowires (NWs) and Au nanoparticles (NPs) at the liquid-liquid interface (water-chloroform) by vigorous shaking. The composition of co-assembled thin films can be controlled by adjusting the concentration of the nanosized building blocks. As a versatile interfacial assembly method, other nanoparticles such as Ag2S and Fe3O4 NPs can also be co-assembled with Ag NWs using the same procedure. Meanwhile, the co-assembly state of the obtained Au NPs and Ag NWs makes a significant contribution to the high sensitivity of surface-enhanced Raman scattering (SERS) to model the molecule 3,3'-diethylthiatricarbocyanine iodide (DTTCI). The SERS intensities show high dependence on the molar ratio of Au NPs and Ag NWs and the layer number of the co-assembled thin films. This shaking-assisted liquid-liquid assembly system has been proved to be a facile way for co-assembling nanowires and nanoparticles, and will pave a way for further applications of the macroscopic co-assemblies with novel functionalities.In this paper, we report the fabrication of co-assembled thin films composed of silver nanowires (NWs) and Au nanoparticles (NPs) at the liquid-liquid interface (water-chloroform) by vigorous shaking. The composition of co-assembled thin films can be controlled by adjusting the concentration of the nanosized building blocks. As a versatile interfacial assembly method, other nanoparticles such as Ag2S and Fe3O4 NPs can also be co-assembled with Ag NWs using the same procedure. Meanwhile, the co-assembly state of the obtained Au NPs and Ag NWs makes a significant contribution to the high sensitivity of surface-enhanced Raman scattering (SERS) to model the molecule 3,3'-diethylthiatricarbocyanine iodide (DTTCI). The SERS intensities show high dependence on the molar ratio of Au NPs and Ag NWs and the layer number of the co-assembled thin films. This shaking-assisted liquid-liquid assembly system

  11. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film

    NASA Astrophysics Data System (ADS)

    Rozhavskaya, M. M.; Lundin, W. V.; Lundina, E. Yu.; Davydov, V. Yu.; Troshkov, S. I.; Vasilyev, A. A.; Brunkov, P. N.; Baklanov, A. V.; Tsatsulnikov, A. F.; Dubrovskii, V. G.

    2015-01-01

    We present a new approach for synthesis of GaN nanowires and microwires by metal organic chemical vapor deposition via a thin titanium film evaporated onto sapphire substrate prior to growth. Titanium etches a two-dimensional GaN layer deposited at the initial stage and GaN nanowires subsequently emerge at the boundaries of the etched grains. These wires grow at an exceptional elongation rate of 18 μm/min and extend radially at a rate of 0.14 μm/min. The GaN layer between the wires grows at a rate of 0.1 μm/min. High material quality of these structures is confirmed by micro-photoluminescence spectroscopy. We investigate the initial nucleation stage, the time evolution of the wire length and diameter, the length and diameter distributions and speculate about a mechanism that yields the observed growth behavior.

  12. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-06-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light.

  13. Thin Film Silicon Nanowire/PEDOT:PSS Hybrid Solar Cells with Surface Treatment.

    PubMed

    Wang, Hao; Wang, Jianxiong; Hong, Lei; Tan, Yew Heng; Tan, Chuan Seng; Rusli

    2016-12-01

    SiNW/PEDOT:PSS hybrid solar cells are fabricated on 10.6-μm-thick crystalline Si thin films. Cells with Si nanowires (SiNWs) of different lengths fabricated using the metal-catalyzed electroless etching (MCEE) technique have been investigated. A surface treatment process using oxygen plasma has been applied to improve the surface quality of the SiNWs, and the optimized cell with 0.7-μm-long SiNWs achieved a power conversion efficiency (PCE) of 7.83 %. The surface treatment process is found to remove surface defects and passivate the SiNWs and substantially improve the average open circuit voltage from 0.461 to 0.562 V for the optimized cell. The light harvesting capability of the SiNWs has also been investigated theoretically using optical simulation. It is found that the inherent randomness of the MCEE SiNWs, in terms of their diameter and spacing, accounts for the excellent light harvesting capability. In comparison, periodic SiNWs of comparable dimensions have been shown to exhibit much poorer trapping and absorption of light. PMID:27356558

  14. ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications

    NASA Astrophysics Data System (ADS)

    Zhong, Miao; Sato, Yukio; Kurniawan, Mario; Apostoluk, Aleksandra; Masenelli, Bruno; Maeda, Etsuo; Ikuhara, Yuichi; Delaunay, Jean-Jacques

    2012-12-01

    A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [0\\bar {2}1] oriented ZnAl2O4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of ˜1017 cm-3 with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO-ZnGa2O4 core-shell nanowire array on a film structure. The fabricated ZnO-ZnGa2O4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.

  15. High-transparency and low-resistivity poly (methylmethacrylate) films containing silver nanowires and graphene-oxide nanoplatelets

    NASA Astrophysics Data System (ADS)

    Bang, Yo Han; Choo, Dong Chul; Kim, Tae Whan

    2016-07-01

    Nanocomposite films containing silver nanowires (Ag NWs) and graphene-oxide nanoplatelets (GONPs) were formed on glass, and the nanocomposite films were then transferred to poly(methylmethacrylate) (PMMA) films. Scanning electron microscopy images showed that Ag NWs with a length of 20 μm and a width of 80 nm, together with GONPs with a size of 15 μm, had been formed on the PMMA film and that the Ag NWs on the PMMA film were partially covered with the GONPs. While the transmittance of the PMMA film with the Ag NWs and the GONPs was almost the same as that of the PMMA film with the Ag NWs alone, the corresponding sheet resistance was decreased due to the generation of quaternary nitrogen in the GONPs, which the results of X-ray photoelectron spectroscopy and Raman spectroscopy confirmed. The transmittance and the sheet resistance of the PMMA film containing Ag NWs and GONPs were approximately 90% at 550 nm and 24 Ohm/sq, respectively.

  16. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.

    PubMed

    Stanchu, Hryhorii V; Kuchuk, Andrian V; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Zytkiewicz, Zbigniew R; Belyaev, Alexander E; Salamo, Gregory J

    2016-12-01

    The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs. PMID:26860714

  17. Improved flux pinning by prefabricated SnO2 nanowires embedded in epitaxial YBa2Cu3Ox superconducting thin film tapes

    NASA Astrophysics Data System (ADS)

    Selvamanickam, V.; Mallick, R.; Tao, X.; Yao, Y.; Heydari Gharahcheshmeh, M.; Xu, A.; Zhang, Y.; Galstyan, E.; Majkic, G.

    2016-08-01

    We have developed processes to fabricate SnO2 nanowires on single crystalline-like buffer surfaces on flexible metal substrates with controlled alignment and density while eliminating undesired in-plane nanostructures that can be deleterious to subsequent epitaxial growth of the superconductor film. The in-plane nanostructures formed due to the mobility of gold catalyst on the nucleating surface and a two-step process was developed to restrict this mobility. Post-ion bombardment of the surface with randomly aligned SnO2 nanowires has resulted in re-alignment of the nanowires along the ion beam direction as well as in the removal of the undesired in-plane nanostructures. The most effective and reproducible control of SnO2 nanowire density with near absence of in-plane nanostructures was achieved by growth on single crystalline-like CeO2 surfaces and use of colloidal gold catalysts of 30 nm in size. YBa2Cu3Ox superconductor films epitaxially grown on the single crystalline-like surfaces with SnO2 nanowires exhibit a 50% improvement in critical current at 77 K in a magnetic field of 1 Tesla aligned along the orientation of the embedded nanowires.

  18. Biocompatible and Antibacterial SnO2 Nanowire Films Synthesized by E-Beam Evaporation Method.

    PubMed

    Prasad, R G S V; Phani, A R; Rao, K N; Kumar, R Rakesh; Prasad, S; Prabhakara, G; Sheeja, M S; Salins, C P; Endrino, J L; Raju, D B

    2015-06-01

    In this work, the biocompatibility and antibacterial activities of novel SnO2 nanowire coatings prepared by electron-beam (E-Beam) evaporation process at low temperatures were studied. The nanowire coatings were characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) methods. The results of in vitro cytotoxicity and cell proliferation assays suggested that the SnO2 nanowire coatings were nontoxic and promoted the proliferation of C2C12 and L929 cells (> 90% viability). Cellular activities, cell adhesion, and lactate dehydrogenase activities were consistent with the superior biocompatibility of the nanowire materials. Notably, the nanowire coating showed potent antibacterial activity against six different bacterial strains. The antibacterial activity of the SnO2 material was attributed to the photocatalytic nature of SnO2. The antibacterial activity and biocompatibility of the newly developed SnO2 nanowire coatings may enable their use as coating materials for biomedical implants. PMID:26353584

  19. Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yong-Xin; Liu, Fei; Shen, Cheng-Min; Li, Jun; Deng, Shao-Zhi; Xu, Ning-Sheng; Gao, Hong-Jun

    2016-08-01

    Large-area patterned films of boron nanowires (BNWs) are fabricated at various densities by chemical vapor deposition (CVD). Different widths of unit-cell of Mo masks are used as templates. The widths of unit-cell of Mo masks are 100 μm, 150 μm, and 200 μm, respectively. The distance between unit cells is 50 μm. The BNWs have an average diameter of about 20 nm and lengths of 10 μm–20 μm. High-resolution transmission electron microscopy analysis shows that each nanowire has a β-tetragonal structure with good crystallization. Field emission measurements of the BNW films show that their turn-on electric fields decrease with width of unit-cell increasing. Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Fund from the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

  20. Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

    PubMed

    Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig

    2013-05-01

    In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW. PMID:23858873

  1. Growth and characterization of ceria thin films and Ce-doped γ-Al2O3 nanowires using sol-gel techniques.

    PubMed

    Gravani, S; Polychronopoulou, K; Stolojan, V; Cui, Q; Gibson, P N; Hinder, S J; Gu, Z; Doumanidis, C C; Baker, M A; Rebholz, C

    2010-11-19

    γ-Al(2)O(3) is a well known catalyst support. The addition of Ce to γ-Al(2)O(3) is known to beneficially retard the phase transformation of γ-Al(2)O(3) to α-Al(2)O(3) and stabilize the γ-pore structure. In this work, Ce-doped γ-Al(2)O(3) nanowires have been prepared by a novel method employing an anodic aluminium oxide (AAO) template in a 0.01 M cerium nitrate solution, assisted by urea hydrolysis. Calcination at 500 °C for 6 h resulted in the crystallization of the Ce-doped AlOOH gel to form Ce-doped γ-Al(2)O(3) nanowires. Ce(3+) ions within the nanowires were present at a concentration of < 1 at.%. On the template surface, a nanocrystalline CeO(2) thin film was deposited with a cubic fluorite structure and a crystallite size of 6-7 nm. Characterization of the nanowires and thin films was performed using scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. The nanowire formation mechanism and urea hydrolysis kinetics are discussed in terms of the pH evolution during the reaction. The Ce-doped γ-Al(2)O(3) nanowires are likely to find useful applications in catalysis and this novel method can be exploited further for doping alumina nanowires with other rare earth elements. PMID:20975211

  2. Time-resolved analysis of the white photoluminescence from chemically synthesized SiCxOy thin films and nanowires

    NASA Astrophysics Data System (ADS)

    Tabassum, Natasha; Nikas, Vasileios; Ford, Brian; Huang, Mengbing; Kaloyeros, Alain E.; Gallis, Spyros

    2016-07-01

    The study reported herein presents results on the room-temperature photoluminescence (PL) dynamics of chemically synthesized SiCxOy≤1.6 (0.19 < x < 0.6) thin films and corresponding nanowire (NW) arrays. The PL decay transients of the SiCxOy films/NWs are characterized by fast luminescence decay lifetimes that span in the range of 350-950 ps, as determined from their deconvoluted PL decay spectra and their stretched-exponential recombination behavior. Complementary steady-state PL emission peak position studies for SiCxOy thin films with varying C content showed similar characteristics pertaining to the variation of their emission peak position with respect to the excitation photon energy. A nearly monotonic increase in the PL energy emission peak, before reaching an energy plateau, was observed with increasing excitation energy. This behavior suggests that band-tail states, related to C-Si/Si-O-C bonding, play a prominent role in the recombination of photo-generated carriers in SiCxOy. Furthermore, the PL lifetime behavior of the SiCxOy thin films and their NWs was analyzed with respect to their luminescence emission energy. An emission-energy-dependent lifetime was observed, as a result of the modulation of their band-tail states statistics with varying C content and with the reduced dimensionality of the NWs.

  3. Preparation and characterization of thin-film composite membrane with nanowire-modified support for forward osmosis process.

    PubMed

    Low, Ze-Xian; Liu, Qi; Shamsaei, Ezzatollah; Zhang, Xiwang; Wang, Huanting

    2015-01-01

    Internal concentration polarization (ICP) in forward osmosis (FO) process is a characteristic problem for asymmetric thin-film composite (TFC) FO membrane which leads to lower water flux. To mitigate the ICP effect, modification of the substrates' properties has been one of the most effective methods. A new polyethersulfone-based ultrafiltration membrane with increased surface porosity and high water flux was recently produced by incorporating Zn2GeO4 nanowires. The composite membrane was used as a substrate for the fabrication of TFC FO membrane, by coating a thin layer of polyamide on top of the substrate. The substrate and the nanowires were characterized by a range of techniques such as SEM, XRD, and contact angle goniometry. The water permeability and molecular weight cut-offs (MWCO) of the substrate; and the FO performance of the TFC membrane were also determined. The Zn2GeO4-modified membrane showed ~45% increase in water permeability and NaCl salt rejection of 80% under RO mode. In FO mode, the ratio of water flux to reverse solute flux was also improved. However, lower FO flux was obtained which could be due to ICP. The result shows that Zn2GO4 nanowire may be used as a modifier to the substrate to improve the quality of the polyamide layer on the substrate to improve the flux and selectivity, but not as effective in reducing ICP. This work demonstrates that the incorporation of nanomaterials to the membrane substrate may be an alternative approach to improve the formation of polyamide skin layer to achieve better FO performance. PMID:25803239

  4. Preparation and Characterization of Thin-Film Composite Membrane with Nanowire-Modified Support for Forward Osmosis Process

    PubMed Central

    Low, Ze-Xian; Liu, Qi; Shamsaei, Ezzatollah; Zhang, Xiwang; Wang, Huanting

    2015-01-01

    Internal concentration polarization (ICP) in forward osmosis (FO) process is a characteristic problem for asymmetric thin-film composite (TFC) FO membrane which leads to lower water flux. To mitigate the ICP effect, modification of the substrates’ properties has been one of the most effective methods. A new polyethersulfone-based ultrafiltration membrane with increased surface porosity and high water flux was recently produced by incorporating Zn2GeO4 nanowires. The composite membrane was used as a substrate for the fabrication of TFC FO membrane, by coating a thin layer of polyamide on top of the substrate. The substrate and the nanowires were characterized by a range of techniques such as SEM, XRD, and contact angle goniometry. The water permeability and molecular weight cut-offs (MWCO) of the substrate; and the FO performance of the TFC membrane were also determined. The Zn2GeO4-modified membrane showed ~45% increase in water permeability and NaCl salt rejection of 80% under RO mode. In FO mode, the ratio of water flux to reverse solute flux was also improved. However, lower FO flux was obtained which could be due to ICP. The result shows that Zn2GO4 nanowire may be used as a modifier to the substrate to improve the quality of the polyamide layer on the substrate to improve the flux and selectivity, but not as effective in reducing ICP. This work demonstrates that the incorporation of nanomaterials to the membrane substrate may be an alternative approach to improve the formation of polyamide skin layer to achieve better FO performance. PMID:25803239

  5. Contact-enhanced transparent silver nanowire network for all solution-based top-contact metal-oxide thin-film transistors.

    PubMed

    Kim, Yong-Hoon; Kim, Tae-Hyoung; Lee, Yeji; Kim, Jong-Woong; Kim, Jaekyun; Park, Sung Kyu

    2014-11-01

    In this paper, we investigate contact-enhanced transparent silver nanowire (Ag NW) network for solution-processed metal-oxide thin-film transistors (TFTs). Mechanical roll pressing was applied to a bar-coated Ag NW film to enhance the inter-nanowire connectivity. As a result, the sheet resistance of the Ag NW film was decreased from 119.5 ψ/square to 92.4 ψ/square, and more stable and enhanced TFT characteristics were achieved when the roll-pressed Ag NW was employed as source/drain electrodes. In addition, a non-acidic wet etching method was developed to pattern the Ag NW electrodes to construct top-contact geometry indium-gallium-zinc oxide TFTs. From the results, it is believed that the mechanical roll pressing and non-acidic wet etching method may be utilized in realizing all solution-based transparent metal-oxide TFTs. PMID:25958491

  6. MOF Thin Film-Coated Metal Oxide Nanowire Array: Significantly Improved Chemiresistor Sensor Performance.

    PubMed

    Yao, Ming-Shui; Tang, Wen-Xiang; Wang, Guan-E; Nath, Bhaskar; Xu, Gang

    2016-07-01

    A strategy for combining metal oxides and metal-organic frameworks is proposed to design new materials for sensing volatile organic compounds, for the first time. The prepared ZnO@ZIF-CoZn core-sheath nanowire arrays show greatly enhanced performance not only on its selectivity but also on its response, recovery behavior, and working temperature. PMID:27153113

  7. EDITORIAL: Nanowires Nanowires

    NASA Astrophysics Data System (ADS)

    Jagadish, Chennupati

    2010-02-01

    Nanowires are considered as building blocks for the next generation of electronics, photonics, sensors and energy applications. One-dimensional nanostructures offer unique opportunities to control the density of states of semiconductors, and in turn their electronic and optical properties. Nanowires allow the growth of axial heterostructures without the constraints of lattice mismatch. This provides flexibility to create heterostructures of a broad range of materials and allows integration of compound semiconductor based optoelectronic devices with silicon based microelectronics. Nanowires are widely studied and the number of papers published in the field is growing exponentially with time. Already nanowire lasers, nanowire transistors, nanowire light emitting diodes, nanowire sensors and nanowire solar cells have been demonstrated. This special issue on semiconductor nanowires features 17 invited papers from leading experts in the field. In this special issue, the synthesis and growth of semiconductor nanowires of a broad range of materials have been addressed. Both axial and radial heterostructures and their structural properties have been discussed. Electrical transport properties of nanowires have been presented, as well as optical properties and carrier dynamics in a range of nanowires and nanowire heterostructures. Devices such as nanowire lasers and nanowire sensors have also been discussed. I would like to thank the Editorial Board of the journal for suggesting this special issue and inviting me to serve as the Guest Editor. Sincere thanks are due to all the authors for their contributions to this special issue. I am grateful to the reviewers and editorial staff at Semiconductor Science and Technology and the Institute of Physics Publishing for their excellent efforts. Special thanks are due to Dr Claire Bedrock for coordinating this special issue.

  8. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

    PubMed

    Chen, Po-Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young-geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E; Zhou, Chongwu

    2009-11-24

    We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature. PMID:19842677

  9. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth. PMID:26876494

  10. Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

    NASA Astrophysics Data System (ADS)

    Yoo, Tae-Hee; Sang, Byoung-In; Wang, Byung-Yong; Lim, Dae-Soon; Kang, Hyun Wook; Choi, Won Kook; Lee, Young Tack; Oh, Young-Jei; Hwang, Do Kyung

    2016-04-01

    Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

  11. Fabrication and characterization of ZnO nanowires by wet oxidation of Zn thin film deposited on Teflon substrate

    NASA Astrophysics Data System (ADS)

    Farhat, O. F.; Halim, M. M.; Abdullah, M. J.; Ali, M. K. M.; Ahmed, Naser M.; Bououdina, M.

    2015-10-01

    In this study, ZnO nanowires (NWs) were successfully grown for the first time on to Teflon substrate by a wet oxidation of a Zn thin film coated by RF sputtering technique. The sputtered Zn thin film was oxidized at 100 °C for 5 h under water-vapour using a horizontal furnace. This oxidation process transformed Zn thin film into ZnO with wire-like nanostructure. XRD analysis confirms the formation of single nanocrystalline ZnO phase having a low compressive strain. FESEM observations reveal high density of ZnO NWs with diameter ranging from 34 to 52 nm and length about 2.231 μm, which are well distributed in different direction. A flexible ZnO NWs-based metal-semiconductor-metal UV photodetector was fabricated. Photo-response and sensitivity measurements under low power illumination (375 nm, 1.5 mW/cm2) showed a high sensitivity of 2050%, which can be considered a relatively fast response and baseline recovery for UV detection.

  12. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    PubMed

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%. PMID:23389277

  13. Enhanced Optoelectronic Conversion Efficiency of CdSe/ZnS Quantum Dot/Graphene/Silver Nanowire Hybrid Thin Films.

    PubMed

    Liu, Bo-Tau; Wu, Kuan-Han; Lee, Rong-Ho

    2016-12-01

    In this study, we prepared the reduced graphene oxide (rGO)-CdSe/ZnS quantum dots (QDs) hybrid films on a three-layer scaffold that the QD layer was sandwiched between the two rGO layers. The photocurrent was induced by virtue of the facts that the rGO quenched the photoluminescence of QDs and transferred the excited energy. The quenching mechanism was attributed to the surface energy transfer, supported in our experimental results. We found that the optoelectronic conversion efficiency of the hybrid films can be significantly improved by incorporating the silver nanowires (AgNWs) into the QD layer. Upon increasing AgNW content, the photocurrent density increased from 22.1 to 80.3 μA cm(-2), reaching a near 3.6-fold enhancement compared to the pristine rGO-QD hybrid films. According to the analyses of photoluminescence spectra, shape effect, and electrochemical impedance spectra, the enhancement on the optoelectronic conversion efficiency arise mainly from the strong quenching ability of silver and the rapid electron transfer of AgNWs. PMID:27599719

  14. Silver nanowire composite window layers for fully solution-deposited thin-film photovoltaic devices.

    PubMed

    Chung, Choong-Heui; Song, Tze-Bin; Bob, Brion; Zhu, Rui; Duan, Hsin-Sheng; Yang, Yang

    2012-10-23

    A silver nanowire-indium tin oxide nanoparticle composite and its successful application to fully solution processed CuInSe(2) solar cells as a window layer are demonstrated, effectively replacing the traditionally sputtered both intrinsic zinc oxide and indium tin oxide layers. The devices utilizing the nanocomposite window layer demonstrate photovoltaic parameters equal to or even beyond those with sputtered intrinsic zinc oxide and indium tin oxide contacts. PMID:22887002

  15. Nanowire Solar Cells

    NASA Astrophysics Data System (ADS)

    Garnett, Erik C.; Brongersma, Mark L.; Cui, Yi; McGehee, Michael D.

    2011-08-01

    The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced reflection, extreme light trapping, improved band gap tuning, facile strain relaxation, and increased defect tolerance. These benefits are not expected to increase the maximum efficiency above standard limits; instead, they reduce the quantity and quality of material necessary to approach those limits, allowing for substantial cost reductions. Additionally, nanowires provide opportunities to fabricate complex single-crystalline semiconductor devices directly on low-cost substrates and electrodes such as aluminum foil, stainless steel, and conductive glass, addressing another major cost in current photovoltaic technology. This review describes nanowire solar cell synthesis and fabrication, important characterization techniques unique to nanowire systems, and advantages of the nanowire geometry.

  16. Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

    NASA Astrophysics Data System (ADS)

    Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

    2015-01-01

    Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

  17. Application of patterned Ag-nanowire networks to transparent thin-film heaters and electrodes for organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Seung-Rok; Triambulo, Ross E.; Kim, Jin-Hoon; Park, Jaeyoon; Jeong, Unyong; Park, Jin-Woo

    2016-06-01

    We present patterned Ag-nanowire (AgNW) networks for their application to transparent electrodes in flexible devices. Using capillary-force-based soft lithography (CFL), we formed 25- to 30-µm-wide line patterns of AgNWs on flexible polymer substrates. Organic light-emitting diodes (OLEDs) and transparent thin-film heaters (TFHs) were successfully fabricated on the patterned substrates, which verified the potential of AgNW patterns formed by CFL as interconnects in flexible devices.

  18. A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors.

    PubMed

    Liang, Jiajie; Tong, Kwing; Pei, Qibing

    2016-07-01

    A water-based silver-nanowire (AgNW) ink is formulated for screen printing. Screen-printed AgNW patterns have uniform sharp edges, ≈50 μm resolution, and electrical conductivity as high as 4.67 × 10(4) S cm(-1) . The screen-printed AgNW patterns are used to fabricate a stretchable composite conductor, and a fully printed and intrinsically stretchable thin-film transistor array is also realized. PMID:27159406

  19. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

    SciTech Connect

    Li, Qiang; Ng, Kar Wei; Lau, Kei May

    2015-02-16

    We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a “tiara”-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain-free GaAs thin films out of the nanowires without using SiO{sub 2} sidewalls for defect termination. Analysis from XRD ω-rocking curves yielded full-width-at-half-maximum values of 238 and 154 arc sec from 900 to 2000 nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform.

  20. Highly flexible, transparent, conductive and antibacterial films made of spin-coated silver nanowires and a protective ZnO layer

    NASA Astrophysics Data System (ADS)

    Chen, Youxin; Lan, Wei; Wang, Junya; Zhu, Ranran; Yang, Zhiwei; Ding, Delei; Tang, Guomei; Wang, Kairong; Su, Qing; Xie, Erqing

    2016-02-01

    We prepared highly flexible, transparent, conductive and antibacterial film by spin coating a silver nanowire suspension on a poly (ethylene terephthalate) (PET) substrate. The ZnO layer covered the conductive silver nanowire (AgNW) network to protect the metal nanowires from oxidization and enhance both wire-to-wire adhesion and wire-to-substrate adhesion. It is found that the number of AgNW coatings correlates with both the sheet resistance (Rs) and the transmittance of the AgNW/ZnO composite films. An excellent 92% optical transmittance in the visible range and a surface sheet resistance of only 9 Ω sq-1 has been achieved, respectively. Even after bending 1000 times (5 mm bending radius), we found no significant change in the sheet resistance or optical transmittance. The real-time sheet resistance measured as a function of bending radius also remains stable even at the smallest measured bending radius (1 mm). The AgNW/ZnO composite films also show antibacterial effects which could be useful for the fabrication of wearable electronic devices.

  1. Hybrid transparent conductive film on flexible glass formed by hot-pressing graphene on a silver nanowire mesh.

    PubMed

    Chen, Tong Lai; Ghosh, Dhriti Sundar; Mkhitaryan, Vahagn; Pruneri, Valerio

    2013-11-27

    Polycrystalline graphene and metallic nanowires (NWs) have been proposed to replace indium tin oxide (ITO), the most widely used transparent electrode (TE) film on the market. However, the trade-off between optical transparency (Topt) and electrical sheet resistance (Rs) of these materials taken alone makes them difficult to compete with ITO. In this paper, we show that, by hot-press transfer of graphene monolayer on Ag NWs, the resulting combined structure benefits from the synergy of the two materials, giving a Topt-Rs trade-off better than that expected by simply adding the single material contributions Ag NWs bridge any interruption in transferred graphene, while graphene lowers the contact resistance among neighboring NWs and provides local conductivity in the uncovered regions in-between NWs. The hot-pressing not only allows graphene transfer but also compacts the NWs joints, thus reducing contact resistance. The dependence on the initial NW concentration of the effects produced by the hot press process on its own and the graphene transfer using hot press was investigated and indicates that a low concentration is more suitable for the proposed geometry. A TE film with Topt of 90% and Rs of 14 Ω/sq is demonstrated, also on a flexible glass substrate about 140 μm thick, a very attractive platform for efficient flexible electronic and photonic devices. PMID:24164641

  2. Absorption enhancement of GaInP nanowires by tailoring transparent shell thicknesses and its application in III-V nanowire/Si film two-junction solar cells.

    PubMed

    Li, Xinhua; Shi, Tongfei; Liu, Guangqiang; Wen, Long; Zhou, BuKang; Wang, Yuqi

    2015-09-21

    A non-absorbing transparent shell is proposed to be coated on the outer surface of the core photoactive GaInP nanowire array (NWA) of the III-V nanowire (NW)/Si film two-junction solar cell. Interestingly, the diluted (at the filling ratio of 0.25) GaInP NWA with core / transparent shell structure can absorb more light than that in bare denser (at the filling ratio of 0.5) NWA. This allows for less source material consumption during the fabrication of III-V NWA/Si film two-junction cell. Meanwhile, the condition of current matching between the top III-V NWA and Si film sub cell can be easily fulfilled by tailoring the coating thickness of the transparent coating. Beyond the advantages on light absorption, the surface passivation effects introduced by the addition of some transparent dielectric coatings can reduce the surface recombination rate at the top NWA sub cell surface. This facilitates the effective extraction of photo-generated carriers and enhances output stability of the top NWA sub cell. From electrical simulation, a power conversion efficiency of 29.9% can be obtained at the optimized coating geometry. PMID:26406728

  3. Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.

    PubMed

    Liu, Xingqiang; Liu, Xi; Wang, Jingli; Liao, Chongnan; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Fan, Zhiyong; Wang, Ti; Chen, Xiaoshuang; Lu, Wei; Hu, Weida; Liao, Lei

    2014-11-19

    A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon. PMID:25236580

  4. Mesoporous TiO2 Nanowire Film for Dye-Sensitized Solar Cell.

    PubMed

    Xiao, Li; Xu, Jia; Liu, Xiu; Zhang, Yongzhe; Zhang, Bing; Yao, Jianxi; Dai, Songyuan; Tan, Zhanao; Pan, Xu

    2016-06-01

    In this work, TiO2 nanowire arrays were grown on fluorine-doped tin oxide (FTO) glass substrate, and then were converted into mesoporous nanowires (MNWs). The TiO2 MNWs are about 5 μm in length and 30-200 nm in diameter, with mesopores size of 5-30 nm randomly distributed on the NW surface. X-ray diffraction pattern reports show that the NWs are single crystallized rutile TiO2 and oriented grown along [001]. Through further characterization of FT-IR and TG-DSC, we proposed a reasonable explanation for pore existence. After dye-sensitized solar cells (DSSCs) assembly, the photoelectric conversion efficiency (PCE) of MNWs based DSSC achieved 3.2%. It means tenfold enhancement of photoelectric property compare with the as-grown NWs. Furthermore, dye absorb capacity of MNWs can reach up to 4.11 x 10(-8) mol/cm2. However, such MNWs can not only provide quick and efficient electron transmission channel, but also owns big specific surface area to absorb abundant dyes, thus conducive to fabricate solar cell with a high PCE. PMID:27427603

  5. Piezotronic effect in solution-grown p-type ZnO nanowires and films.

    PubMed

    Pradel, Ken C; Wu, Wenzhuo; Zhou, Yusheng; Wen, Xiaonan; Ding, Yong; Wang, Zhong Lin

    2013-06-12

    Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing. PMID:23635319

  6. Fabrication of freestanding silk fibroin films containing Ag nanowires/NaYF4:Yb,Er nanocomposites with metal-enhanced fluorescence behavior.

    PubMed

    Zhao, Bing; Qi, Ning; Zhang, Ke-Qin; Gong, Xiao

    2016-06-01

    Solar cells containing upconversion nanoparticles (UCNPs) used as a power source in biomedical nanosystems have attracted great interest. However, such solar cells further need to be developed because their substrate materials should be biocompatible, flexible and highly luminescent. Here, we report that freestanding silk fibroin (SF) films containing a mesh of silver nanowires (AgNWs) and β-NaYF4:Yb,Er nanocrystals with metal-enhanced fluorescence behavior can be fabricated. The freestanding composite films exhibit properties such as good optical transparency, conductivity and flexibility. Furthermore, they show significantly enhanced upconversion fluorescence due to surface plasmon polaritons (SPPs) of AgNWs compared to the SF-UCNP films without AgNWs. The freestanding composite films with metal-enhanced fluorescence behavior show great promise for future applications in self-powered nanodevices such as cardiac pacemakers, biosensors and nanorobots. PMID:27210511

  7. Low-visibility patterning of transparent conductive silver-nanowire films.

    PubMed

    Cho, Eun-Hyoung; Hwang, Jinyoung; Kim, Jaekwan; Lee, Jooho; Kwak, Chan; Lee, Chang Seung

    2015-10-01

    A partial etching mechanism is proposed to meet the requirement for low-visibility patterning of silver nanowire (AgNW)-based transparent conductive electrodes (TCEs) by reducing the difference in optical properties between conductive and nonconductive regions of the pattern. Using the finite difference time domain (FDTD) method, etched geometries that provide the smallest difference in transmittance after etching are theoretically determined. A sodium hypochlorite-based etchant capable that allows the etched geometry to be varied by controlling the pH is used to create a low-visibility pattern with a transmittance and haze difference of 0.07 and 0.04%, respectively. To the best of our knowledge, this is the first time that a partial etching mechanism such as this has been studied in relation to AgNW-based TCEs. PMID:26480124

  8. Positively-charged reduced graphene oxide as an adhesion promoter for preparing a highly-stable silver nanowire film.

    PubMed

    Sun, Qijun; Lee, Seong Jun; Kang, Hyungseok; Gim, Yuseong; Park, Ho Seok; Cho, Jeong Ho

    2015-04-21

    An ultrathin conductive adhesion promoter using positively charged reduced graphene oxide (rGO-NH3(+)) has been demonstrated for preparing highly stable silver nanowire transparent conductive electrodes (AgNW TCEs). The adhesion promoter rGO-NH3(+), spray coated between the substrate and AgNWs, significantly enhances the chemical and mechanical stabilities of the AgNW TCEs. Besides, the ultrathin thickness of the rGO-NH3(+) ensures excellent optical transparency and mechanical flexibility for TCEs. The AgNW films prepared using the adhesion promoter are extremely stable under harsh conditions, including ultrasonication in a variety of solvents, 3M Scotch tape detachment test, mechanical bending up to 0.3% strain, or fatigue over 1000 cycles. The greatly enhanced adhesion force is attributed to the ionic interactions between the positively charged protonated amine groups in rGO-NH3(+) and the negatively charged hydroxo- and oxo-groups on the AgNWs. The positively charged GO-NH3(+) and commercial polycationic polymer (poly allylamine hydrochloride) are also prepared as adhesion promoters for comparison with rGO-NH3(+). Notably, the closely packed hexagonal atomic structure of rGO offers better barrier properties to water permeation and demonstrates promising utility in durable waterproof electronics. This work offers a simple method to prepare high-quality TCEs and is believed to have great potential application in flexible waterproof electronics. PMID:25807039

  9. Synthesis of silver nanowires using hydrothermal technique for flexible transparent electrode application

    NASA Astrophysics Data System (ADS)

    Vijila, C. V. Mary; Rahman, K. K. Arsina; Parvathy, N. S.; Jayaraj, M. K.

    2016-05-01

    Transparent conducting films are becoming increasingly interesting because of their applications in electronics industry such as their use in solar energy applications. In this work silver nanowires were synthesized using solvothermal method by reducing silver nitrate and adding sodium chloride for assembling silver into nanowires. Absorption spectra of nanowires in the form of a dispersion in deionized water, AFM and SEM images confirm the nanowire formation. Solution of nanowire was coated over PET films to obtain transparent conducting films.

  10. Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

    PubMed

    Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

    2016-02-17

    Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications. PMID:26817408

  11. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    PubMed

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors. PMID:26381613

  12. Positively-charged reduced graphene oxide as an adhesion promoter for preparing a highly-stable silver nanowire film

    NASA Astrophysics Data System (ADS)

    Sun, Qijun; Lee, Seong Jun; Kang, Hyungseok; Gim, Yuseong; Park, Ho Seok; Cho, Jeong Ho

    2015-04-01

    An ultrathin conductive adhesion promoter using positively charged reduced graphene oxide (rGO-NH3+) has been demonstrated for preparing highly stable silver nanowire transparent conductive electrodes (AgNW TCEs). The adhesion promoter rGO-NH3+, spray coated between the substrate and AgNWs, significantly enhances the chemical and mechanical stabilities of the AgNW TCEs. Besides, the ultrathin thickness of the rGO-NH3+ ensures excellent optical transparency and mechanical flexibility for TCEs. The AgNW films prepared using the adhesion promoter are extremely stable under harsh conditions, including ultrasonication in a variety of solvents, 3M Scotch tape detachment test, mechanical bending up to 0.3% strain, or fatigue over 1000 cycles. The greatly enhanced adhesion force is attributed to the ionic interactions between the positively charged protonated amine groups in rGO-NH3+ and the negatively charged hydroxo- and oxo-groups on the AgNWs. The positively charged GO-NH3+ and commercial polycationic polymer (poly allylamine hydrochloride) are also prepared as adhesion promoters for comparison with rGO-NH3+. Notably, the closely packed hexagonal atomic structure of rGO offers better barrier properties to water permeation and demonstrates promising utility in durable waterproof electronics. This work offers a simple method to prepare high-quality TCEs and is believed to have great potential application in flexible waterproof electronics.An ultrathin conductive adhesion promoter using positively charged reduced graphene oxide (rGO-NH3+) has been demonstrated for preparing highly stable silver nanowire transparent conductive electrodes (AgNW TCEs). The adhesion promoter rGO-NH3+, spray coated between the substrate and AgNWs, significantly enhances the chemical and mechanical stabilities of the AgNW TCEs. Besides, the ultrathin thickness of the rGO-NH3+ ensures excellent optical transparency and mechanical flexibility for TCEs. The AgNW films prepared using the adhesion

  13. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  14. Aluminum Nanowire Arrays via Directed Assembly

    NASA Astrophysics Data System (ADS)

    Nesbitt, Nathan T.; Merlo, Juan M.; Rose, Aaron H.; Calm, Yitzi M.; D'Imperio, Luke A.; Courtney, Dave T.; Shepard, Steve; Kempa, Krzysztof; Burns, Michael J.; Naughton, Michael J.

    Vertically-oriented metal nanowire arrays are rare. Here, freestanding, vertically-oriented, and lithographically-ordered Al nanowire arrays have been fabricated via directed assembly. The fabrication technique is a variation on the preparation of anodized aluminum oxide (AAO) templates, using nanoimprint lithography (NIL) to direct the formation of pores on an Al film and produce Al nanowires. Near-field scanning optical microscope (NSOM) and conventional optical microscope data of a single nanowire lying on glass and illuminated by a laser spot show evidence of surface plasmons propagating along the nanowire. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. (DGE-1258923).

  15. Nanowire liquid pumps

    NASA Astrophysics Data System (ADS)

    Huang, Jian Yu; Lo, Yu-Chieh; Niu, Jun Jie; Kushima, Akihiro; Qian, Xiaofeng; Zhong, Li; Mao, Scott X.; Li, Ju

    2013-04-01

    The ability to form tiny droplets of liquids and control their movements is important in printing or patterning, chemical reactions and biological assays. So far, such nanofluidic capabilities have principally used components such as channels, nozzles or tubes, where a solid encloses the transported liquid. Here, we show that liquids can flow along the outer surface of solid nanowires at a scale of attolitres per second and the process can be directly imaged with in situ transmission electron microscopy. Microscopy videos show that an ionic liquid can be pumped along tin dioxide, silicon or zinc oxide nanowires as a thin precursor film or as beads riding on the precursor film. Theoretical analysis suggests there is a critical film thickness of ~10 nm below which the liquid flows as a flat film and above which it flows as discrete beads. This critical thickness is the result of intermolecular forces between solid and liquid, which compete with liquid surface energy and Rayleigh-Plateau instability.

  16. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    SciTech Connect

    Shi, Zhifeng; Zhang, Yuantao Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong; Yang, Xiaotian

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  17. High performance of carbon nanotubes/silver nanowires-PET hybrid flexible transparent conductive films via facile pressing-transfer technique

    PubMed Central

    2014-01-01

    To obtain low sheet resistance, high optical transmittance, small open spaces in conductive networks, and enhanced adhesion of flexible transparent conductive films, a carbon nanotube (CNT)/silver nanowire (AgNW)-PET hybrid film was fabricated by mechanical pressing-transfer process at room temperature. The morphology and structure were characterized by scanning electron microscope (SEM) and atomic force microscope (AFM), the optical transmittance and sheet resistance were tested by ultraviolet-visible spectroscopy (UV-vis) spectrophotometer and four-point probe technique, and the adhesion was also measured by 3M sticky tape. The results indicate that in this hybrid nanostructure, AgNWs form the main conductive networks and CNTs as assistant conductive networks are filled in the open spaces of AgNWs networks. The sheet resistance of the hybrid films can reach approximately 20.9 to 53.9 Ω/□ with the optical transmittance of approximately 84% to 91%. The second mechanical pressing step can greatly reduce the surface roughness of the hybrid film and enhance the adhesion force between CNTs, AgNWs, and PET substrate. This process is hopeful for large-scale production of high-end flexible transparent conductive films. PMID:25386105

  18. Flexible and free-standing ternary Cd2GeO4 nanowire/graphene oxide/CNT nanocomposite film with improved lithium-ion battery performance

    NASA Astrophysics Data System (ADS)

    Wang, Linlin; Zhang, Xiaozhu; Shen, Guozhen; Peng, Xia; Zhang, Min; Xu, Jingli

    2016-03-01

    To realize flexible lithium-ion batteries (LIBs), the design of flexible electrode/current collector materials with high mechanical flexibility, superior conductivity and excellent electrochemical performance and electrical stability are highly desirable. In this work, we developed a new ternary Cd2GeO4 nanowire/graphene oxide/carbon nanotube nanocomposite (Cd2GeO4 NW/GO/CNT) film electrode. Benefiting from the efficient combination of GO and Cd2GeO4 NWs, our Cd2GeO4 NW/GO/CNT composite film exhibits a capacity of 784 mA h g-1 after 30 cycles at 200 mA g-1, which is 2.7 times higher than that of Cd2GeO4 NW/CNT film (290 mA h g-1). At a higher rate of 400 mA g-1 and 1 A g-1, the Cd2GeO4 NW/GO/CNT film delivers a stable capacity of 617 and 397 mA h g-1, respectively. Even at 2.5 A g-1, it still exhibits a high rate capacity of 180 mA h g-1. The flexible Cd2GeO4 NW/GO/CNT film clearly demonstrates good cycling stability and rate performance for anode materials in LIBs. This route may be extended to design other flexible free-standing metal germanate nanocomposite anode materials.

  19. Flexible and free-standing ternary Cd2GeO4 nanowire/graphene oxide/CNT nanocomposite film with improved lithium-ion battery performance.

    PubMed

    Wang, Linlin; Zhang, Xiaozhu; Shen, Guozhen; Peng, Xia; Zhang, Min; Xu, Jingli

    2016-03-01

    To realize flexible lithium-ion batteries (LIBs), the design of flexible electrode/current collector materials with high mechanical flexibility, superior conductivity and excellent electrochemical performance and electrical stability are highly desirable. In this work, we developed a new ternary Cd2GeO4 nanowire/graphene oxide/carbon nanotube nanocomposite (Cd2GeO4 NW/GO/CNT) film electrode. Benefiting from the efficient combination of GO and Cd2GeO4 NWs, our Cd2GeO4 NW/GO/CNT composite film exhibits a capacity of 784 mA h g(-1) after 30 cycles at 200 mA g(-1), which is 2.7 times higher than that of Cd2GeO4 NW/CNT film (290 mA h g(-1)). At a higher rate of 400 mA g(-1) and 1 A g(-1), the Cd2GeO4 NW/GO/CNT film delivers a stable capacity of 617 and 397 mA h g(-1), respectively. Even at 2.5 A g(-1), it still exhibits a high rate capacity of 180 mA h g(-1). The flexible Cd2GeO4 NW/GO/CNT film clearly demonstrates good cycling stability and rate performance for anode materials in LIBs. This route may be extended to design other flexible free-standing metal germanate nanocomposite anode materials. PMID:26822529

  20. Copper nanowire networks with transparent oxide shells that prevent oxidation without reducing transmittance.

    PubMed

    Chen, Zuofeng; Ye, Shengrong; Stewart, Ian E; Wiley, Benjamin J

    2014-09-23

    Transparent conducting films of solution-synthesized copper nanowires are an attractive alternative to indium tin oxide due to the relative abundance of Cu and the low cost of solution-phase nanowire coating processes. However, there has to date been no way to protect Cu nanowires with a solution-phase process that does not adversely affect the optoelectric performance of Cu nanowire films. This article reports that the electrodeposition of zinc, tin, or indium shells onto Cu nanowires, followed by oxidation of these shells, enables the protection of Cu nanowire films against oxidation without decreasing film performance. PMID:25180448

  1. Patterned Fabrication of Zinc Oxide Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Khan, Sahar; Lamson, Thomas; Xu, Huizhong

    Zinc oxide nanowires possess desirable mechanical, thermodynamic, electrical, and optical properties. Although the hydrothermal growth process can be applied in tolerable growth conditions, the dimension and density of nanowires has a complex dependence on substrate pre-treatment, precursor concentrations, and growth conditions. Precise control of the geometry and density of nanowires as well as the location of nanowires would allow for the fabrication of useful nanowaveguide devices. In this work, we used electron beam lithography to pattern hole arrays in a polymer layer on gold-coated glass substrates and synthesized zinc oxide nanowires inside these holes. Arrays of nanowires with diameters ranging from 50 nm to 140 nm and various spacings were obtained. The transmission of light through these zinc oxide nanowire arrays in a silver film was also studied. This research was supported by the Seed Grant Program of St. John's University and the National Science Foundation under Grant No. CBET-0953645.

  2. Facile fabrication of network film electrodes with ultrathin Au nanowires for nonenzymatic glucose sensing and glucose/O2 fuel cell.

    PubMed

    Yang, Lu; Zhang, Yijia; Chu, Mi; Deng, Wenfang; Tan, Yueming; Ma, Ming; Su, Xiaoli; Xie, Qingji; Yao, Shuozhuo

    2014-02-15

    We report here on the facile fabrication of network film electrodes with ultrathin Au nanowires (AuNWs) and their electrochemical applications for high-performance nonenzymatic glucose sensing and glucose/O2 fuel cell under physiological conditions (pH 7.4, containing 0.15M Cl(-)). AuNWs with an average diameter of ~7 or 2 nm were prepared and can self-assemble into robust network films on common electrodes. The network film electrode fabricated with 2-nm AuNWs exhibits high sensitivity (56.0 μA cm(-2)mM(-1)), low detection limit (20 μM), short response time (within 10s), excellent selectivity, and good storage stability for nonenzymatic glucose sensing. Glucose/O2 fuel cells were constructed using network film electrodes as the anode and commercial Pt/C catalyst modified glassy carbon electrode as cathode. The glucose/O2 fuel cell using 2-nm AuNWs as anode catalyst output a maximum power density of is 126 μW cm(-2), an open-circuit cell voltage of 0.425 V, and a short-circuit current density of 1.34 mA cm(-2), respectively. Due to the higher specific electroactive surface area of 2-nm AuNWs, the network film electrode fabricated with 2-nm AuNWs exhibited higher electrocatalytic activity toward glucose oxidation than the network film electrode fabricated with 7-nm AuNWs. The network film electrode exhibits high electrocatalytic activity toward glucose oxidation under physiological conditions, which is helpful for constructing implantable electronic devices. PMID:24035853

  3. One-Step Process for High-Performance, Adhesive, Flexible Transparent Conductive Films Based on p-Type Reduced Graphene Oxides and Silver Nanowires.

    PubMed

    Lai, Yi-Ting; Tai, Nyan-Hwa

    2015-08-26

    This work demonstrates a one-step process to synthesize uniformly dispersed hybrid nanomaterial containing silver nanowires (AgNWs) and p-type reduced graphene (p-rGO). The hybrid nanomaterial was coated onto a polyethylene terephthalate (PET) substrate for preparing high-performance flexible transparent conductive films (TCFs). The p-rGO plays the role of bridging discrete AgNWs, providing more electron holes and lowering the resistance of the contacted AgNWs; therefore, enhancing the electrical conductivity without sacrificing too much transparence of the TCFs. Additionally, the p-rGO also improves the adhesion between AgNWs and substrate by covering the AgNWs on the substrate tightly. The study shows that coating of the hybrid nanomaterials on the PET substrate demonstrates exceptional optoelectronic properties with a transmittance of 94.68% (at a wavelength of 550 nm) and a sheet resistance of 25.0 ± 0.8 Ω/sq. No significant variation in electric resistance can be detected even when the film was subjected to a bend loading with a radius of curvature of 5.0 mm or the film was loaded with a reciprocal tension or compression for 1000 cycles. Furthermore, both chemical corrosion resistance and haze effect were improved when p-rGO was introduced. The study shows that the fabricated flexible TCFs have the potential to replace indium tin oxide film in the optoelectronic industry. PMID:26247286

  4. Stress-driven growth of bismuth nanowires

    NASA Astrophysics Data System (ADS)

    Cheng, Yang-Tse; Weiner, Anita M.; Wong, Curtis A.; Balogh, Michael P.; Lukitsch, Michael J.

    2003-03-01

    We recently reported that compressive stresses in thin films can be exploited to grow nanowires (Ref.1). Nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters were formed spontaneously at the rate of a few micrometers per second at room temperature on surfaces of freshly grown composite thin films consisting of Bi and chrome-nitride (CrN). The high compressive stress in the composite thin films was shown to be the driving force responsible for the nanowire formation. In this presentation, the effects of stress, composition, and temperature on the growth and structure of bismuth nanowires will be discussed. This method of growing nanowires can also be extended to other material systems. Ref. 1. Yang-Tse Cheng, Anita M. Weiner, Curtis A. Wong, Michael P. Balogh, and Michael J. Lukitsch, Applied Physics Letters 81, 3248 (2002).

  5. Solution-processed copper-nickel nanowire anodes for organic solar cells

    NASA Astrophysics Data System (ADS)

    Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

    2014-05-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

  6. Superconducting nanowire single photon detectors fabricated from an amorphous Mo{sub 0.75}Ge{sub 0.25} thin film

    SciTech Connect

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W.

    2014-07-14

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo{sub 0.75}Ge{sub 0.25} thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  7. Study on dynamics of photoexcited charge injection and trapping in CdS quantum dots sensitized TiO{sub 2} nanowire array film electrodes

    SciTech Connect

    Pang, Shan; Cheng, Ke; Yuan, Zhanqiang; Xu, Suyun; Cheng, Gang; Du, Zuliang

    2014-05-19

    The photoexcited electrons transfer dynamics of the CdS quantum dots (QDs) deposited in TiO{sub 2} nanowire array films are studied using surface photovoltage (SPV) and transient photovoltage (TPV) techniques. By comparing the SPV results with different thicknesses of QDs layers, we can separate the dynamic characteristics of photoexcited electrons injection and trapping. It is found that the TPV signals of photoexcited electrons trapped in the CdS QDs occur at timescales of about 2 × 10{sup −8} s, which is faster than that of the photoexcited electrons injected from CdS into TiO{sub 2}. More than 90 nm of the thickness of the CdS QDs layer will seriously affect the photoexcited electrons transfer and injection.

  8. Study on dynamics of photoexcited charge injection and trapping in CdS quantum dots sensitized TiO2 nanowire array film electrodes

    NASA Astrophysics Data System (ADS)

    Pang, Shan; Cheng, Ke; Yuan, Zhanqiang; Xu, Suyun; Cheng, Gang; Du, Zuliang

    2014-05-01

    The photoexcited electrons transfer dynamics of the CdS quantum dots (QDs) deposited in TiO2 nanowire array films are studied using surface photovoltage (SPV) and transient photovoltage (TPV) techniques. By comparing the SPV results with different thicknesses of QDs layers, we can separate the dynamic characteristics of photoexcited electrons injection and trapping. It is found that the TPV signals of photoexcited electrons trapped in the CdS QDs occur at timescales of about 2 × 10-8 s, which is faster than that of the photoexcited electrons injected from CdS into TiO2. More than 90 nm of the thickness of the CdS QDs layer will seriously affect the photoexcited electrons transfer and injection.

  9. Synthesis of oxidation-resistant cupronickel nanowires for transparent conducting nanowire networks.

    PubMed

    Rathmell, Aaron R; Nguyen, Minh; Chi, Miaofang; Wiley, Benjamin J

    2012-06-13

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors. PMID:22642652

  10. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    SciTech Connect

    Rathmall, Aaron; Nguyen, Minh; Wiley, Benjamin J

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  11. Enhanced Thermochromic Properties and Solar-Heat Shielding Ability of W(x)V(1-x)O2 Thin Films with Ag Nanowires Capping Layers.

    PubMed

    Zhao, Li Li; Miao, Lei; Liu, Cheng Yan; Wang, Hai Long; Tanemura, Sakae; Sun, Li Xian; Gao, Xiang; Zhou, Jian Hua

    2015-11-01

    Considerable efforts have been made to shift the phase transition temperature of metal-doped vanadium dioxide (VO2) films nearer the ambient temperature while maintain the excellent thermochromic properties simultaneously. Here, we describe a facile and economic solution-based method to fabricate W-doped VO2 (V(1-x)W(x)O2) thin films with excellent thermochromic properties for the application of smart windows. The substitutional doping of tungsten atoms notably reduces the phase transition temperature to the ambient temperature and retains the excellent thermochromic property. Furthermore, Ag nanowires (NWs) are employed as capping layers to effectively decrease the thermal emissivity from 0.833 to 0.603, while the original near infrared region (NIR) modulation ability is not severely affected. Besides, the Ag NWs layers further depress the phase transition temperature as well as the hysteresis loop width, which is important to the fenestration application. These solution-grown Ag NWs/V(1-x)W(x)O2 thin films exhibit excellent solar modulation ability, narrowed hysteresis loop width as well as low thermal emissivity, which provide a promising perspective into the practical application of VO2-based smart windows. PMID:26726666

  12. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  13. Metal nanowire-graphene composite transparent electrodes

    NASA Astrophysics Data System (ADS)

    Mankowski, Trent; Zhu, Zhaozhao; Balakrishnan, Kaushik; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine; Mansuripur, Masud; Falco, Charlies M.

    2014-10-01

    Silver nanowires with 40 nm diameter and copper nanowires with 150 nm diameter were synthesized using low-temperature routes, and deposited in combination with ultrathin graphene sheets for use as transparent conductors. A systematic and detailed analysis involving nature of capping agent for the metal nanowires, annealing of deposited films, and pre-treatment of substrates revealed critical conditions necessary for preparing high performance transparent conducting electrodes. The best electrodes show ~90% optical transmissivity and sheet resistance of ~10 Ω/□, already comparable to the best available transparent electrodes. The metal nanowire-graphene composite electrodes are therefore well suited for fabrication of opto-electronic and electronic devices.

  14. High-performance flexible Ag nanowire electrode with low-temperature atomic-layer-deposition fabrication of conductive-bridging ZnO film.

    PubMed

    Duan, Ya-Hui; Duan, Yu; Chen, Ping; Tao, Ye; Yang, Yong-Qiang; Zhao, Yi

    2015-01-01

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer substrate, which is composed of spin-coating-processed AgNW meshes and of zinc oxide (ZnO) prepared by low-temperature (60°C) atomic layer deposition. ZnO effectively fills in the voids of the AgNW mesh electrode, which is thus able to contact to the device all over the active area, to allow for efficient charge extraction/injection. Furthermore, ZnO grown by low temperature mainly relies on hole conduction to make the anode play a better role. Hole-only devices are fabricated to certify the functionality of the low-temperature ZnO film. Finally, we confirm that the ZnO film grown at a low temperature bring a significant contribution to the performance of the modified AgNW anode. PMID:25852386

  15. High-performance flexible Ag nanowire electrode with low-temperature atomic-layer-deposition fabrication of conductive-bridging ZnO film

    NASA Astrophysics Data System (ADS)

    Duan, Ya-Hui; Duan, Yu; Chen, Ping; Tao, Ye; Yang, Yong-Qiang; Zhao, Yi

    2015-02-01

    As material for flexible transparent electrodes for organic photoelectric devices, the silver nanowires (AgNWs) have been widely studied. In this work, we propose a hybrid flexible anode with photopolymer substrate, which is composed of spin-coating-processed AgNW meshes and of zinc oxide (ZnO) prepared by low-temperature (60°C) atomic layer deposition. ZnO effectively fills in the voids of the AgNW mesh electrode, which is thus able to contact to the device all over the active area, to allow for efficient charge extraction/injection. Furthermore, ZnO grown by low temperature mainly relies on hole conduction to make the anode play a better role. Hole-only devices are fabricated to certify the functionality of the low-temperature ZnO film. Finally, we confirm that the ZnO film grown at a low temperature bring a significant contribution to the performance of the modified AgNW anode.

  16. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation. PMID:22966566

  17. Failure of silver nanowire transparent electrodes under current flow

    PubMed Central

    2013-01-01

    Silver nanowire transparent electrodes have received much attention as a replacement for indium tin oxide, particularly in organic solar cells. In this paper, we show that when silver nanowire electrodes conduct current at levels encountered in organic solar cells, the electrodes can fail in as little as 2 days. Electrode failure is caused by Joule heating which causes the nanowires to breakup and thus create an electrical discontinuity in the nanowire film. More heat is created, and thus failure occurs sooner, in more resistive electrodes and at higher current densities. Suggestions to improve the stability of silver nanowire electrodes are given. PMID:23680014

  18. CuO nanowire/microflower/nanowire modified Cu electrode with enhanced electrochemical performance for non-enzymatic glucose sensing.

    PubMed

    Li, Changli; Yamahara, Hiroyasu; Lee, Yaerim; Tabata, Hitoshi; Delaunay, Jean-Jacques

    2015-07-31

    CuO nanowire/microflower structure on Cu foil is synthesized by annealing a Cu(OH)2 nanowire/CuO microflower structure at 250 °C in air. The nanowire/microflower structure with its large surface area leads to an efficient catalysis and charge transfer in glucose detection, achieving a high sensitivity of 1943 μA mM(-1) cm(-2), a wide linear range up to 4 mM and a low detection limit of 4 μM for amperometric glucose sensing in alkaline solution. With a second consecutive growth of CuO nanowires on the microflowers, the sensitivity of the obtained CuO nanowire/microflower/nanowire structure further increases to 2424 μA mM(-1) cm(-2), benefiting from an increased number of electrochemically active sites. The enhanced electrocatalytic performance of the CuO nanowire/microflower/nanowire electrode compared to the CuO nanowire/microflower electrode, CuO nanowire electrode and CuxO film electrode provides evidence for the significant role of available surface area for electrocatalysis. The rational combination of CuO nanowire and microflower nanostructures into a nanowire supporting microflower branching nanowires structure makes it a promising composite nanostructure for use in CuO based electrochemical sensors with promising analytical properties. PMID:26159235

  19. CuO nanowire/microflower/nanowire modified Cu electrode with enhanced electrochemical performance for non-enzymatic glucose sensing

    NASA Astrophysics Data System (ADS)

    Li, Changli; Yamahara, Hiroyasu; Lee, Yaerim; Tabata, Hitoshi; Delaunay, Jean-Jacques

    2015-07-01

    CuO nanowire/microflower structure on Cu foil is synthesized by annealing a Cu(OH)2 nanowire/CuO microflower structure at 250 °C in air. The nanowire/microflower structure with its large surface area leads to an efficient catalysis and charge transfer in glucose detection, achieving a high sensitivity of 1943 μA mM-1 cm-2, a wide linear range up to 4 mM and a low detection limit of 4 μM for amperometric glucose sensing in alkaline solution. With a second consecutive growth of CuO nanowires on the microflowers, the sensitivity of the obtained CuO nanowire/microflower/nanowire structure further increases to 2424 μA mM-1 cm-2, benefiting from an increased number of electrochemically active sites. The enhanced electrocatalytic performance of the CuO nanowire/microflower/nanowire electrode compared to the CuO nanowire/microflower electrode, CuO nanowire electrode and CuxO film electrode provides evidence for the significant role of available surface area for electrocatalysis. The rational combination of CuO nanowire and microflower nanostructures into a nanowire supporting microflower branching nanowires structure makes it a promising composite nanostructure for use in CuO based electrochemical sensors with promising analytical properties.

  20. Nanowire Lasers

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Larrue, A.; Wilhelm, C.; Soci, C.

    2015-05-01

    We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  1. A light-driven supramolecular nanowire actuator

    NASA Astrophysics Data System (ADS)

    Lee, Junho; Oh, Seungwhan; Pyo, Jaeyeon; Kim, Jong-Man; Je, Jung Ho

    2015-04-01

    A single photomechanical supramolecular nanowire actuator with an azobenzene-containing 1,3,5-tricarboxamide derivative is developed by employing a direct writing method. Single nanowires display photoinduced reversible bending and the bending behavior follows first-order kinetics associated with azobenzene photoisomerization. A wireless photomechanical nanowire tweezers that remotely manipulates a single micro-particle is also demonstrated.A single photomechanical supramolecular nanowire actuator with an azobenzene-containing 1,3,5-tricarboxamide derivative is developed by employing a direct writing method. Single nanowires display photoinduced reversible bending and the bending behavior follows first-order kinetics associated with azobenzene photoisomerization. A wireless photomechanical nanowire tweezers that remotely manipulates a single micro-particle is also demonstrated. Electronic supplementary information (ESI) available: Experimental details, X-ray powder diffraction (XRD) patterns of solution-crystallized sample, meniscus-guided microwires, and freeze-dried sample of Azo-1, Schematic of experimental set-up, 3D bending motion of Azo-1 nanowire, FE-SEM image of a bent Azo-1 nanowire after UV irradiation, real-time grazing incidence X-ray diffraction (GIXD) for an Azo-1 microwire, Imaging analyses, Absorption spectra of an Azo-1 film, and thermostability of Azo-1 nanowire. See DOI: 10.1039/c5nr01118c

  2. Nanowire liquid pumps.

    PubMed

    Huang, Jian Yu; Lo, Yu-Chieh; Niu, Jun Jie; Kushima, Akihiro; Qian, Xiaofeng; Zhong, Li; Mao, Scott X; Li, Ju

    2013-04-01

    The ability to form tiny droplets of liquids and control their movements is important in printing or patterning, chemical reactions and biological assays. So far, such nanofluidic capabilities have principally used components such as channels, nozzles or tubes, where a solid encloses the transported liquid. Here, we show that liquids can flow along the outer surface of solid nanowires at a scale of attolitres per second and the process can be directly imaged with in situ transmission electron microscopy. Microscopy videos show that an ionic liquid can be pumped along tin dioxide, silicon or zinc oxide nanowires as a thin precursor film or as beads riding on the precursor film. Theoretical analysis suggests there is a critical film thickness of ∼10 nm below which the liquid flows as a flat film and above which it flows as discrete beads. This critical thickness is the result of intermolecular forces between solid and liquid, which compete with liquid surface energy and Rayleigh-Plateau instability. PMID:23542904

  3. Large area in situ fabrication of poly(pyrrole)-nanowires on flexible thermoplastic films using nanocontact printing

    NASA Astrophysics Data System (ADS)

    Garcia-Cruz, Alvaro; Lee, Michael; Marote, Pedro; Zine, Nadia; Sigaud, Monique; Bonhomme, Anne; Pruna, Raquel; Lopez, Manuel; Bausells, Joan; Jaffrezic, Nicole; Errachid, Abdelhamid

    2016-08-01

    Highly efficient nano-engineering tools will certainly revolutionize the biomedical and sensing devices research and development in the years to come. Here, we present a novel high performance conducting poly(pyrrole) nanowires (PPy-NW) patterning technology on thermoplastic surfaces (poly(ethylene terephthalate (PETE), poly(ethylene 2,6-naphthalate (PEN), polyimide (PI), and cyclic olefin copolymer) using nanocontact printing and controlled chemical polymerization (nCP-CCP) technique. The technique uses a commercial compact disk as a template to produce nanopatterned polydimethylsiloxane (PDMS) stamps. The PDMS nanopatterned stamp was applied to print the PPy-NWs and the developed technology of nCP-CCP produced 3D conducting nanostructures. This new and very promising nanopatterning technology was achieved in a single step and with a low cost of fabrication over large areas.

  4. Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor-Liquid-Solid Growth.

    PubMed

    Toko, Kaoru; Nakata, Mitsuki; Jevasuwan, Wipakorn; Fukata, Naoki; Suemasu, Takashi

    2015-08-19

    Transfer-free fabrication of vertical Ge nanowires (NWs) on a plastic substrate is demonstrated using a vapor-liquid-solid (VLS) method. The crystal quality of Ge seed layers (50 nm thickness) prepared on plastic substrates strongly influenced the VLS growth morphology, i.e., the density, uniformity, and crystal quality of Ge NWs. The metal-induced layer exchange yielded a (111)-oriented Ge seed layer at 325 °C, which allowed for the VLS growth of vertically aligned Ge NWs. The Ge NW array had almost the same quality as that formed on a bulk Ge(111) substrate. Transmission electron microscopy demonstrated that the Ge NWs were defect-free single crystals. The present investigation paves the way for advanced electronic optical devices integrated on a low-cost flexible substrate. PMID:26230716

  5. Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Mulazimoglu, Emre; Emrah Unalan, Husnu; Turan, Rasit

    2014-02-01

    In this study, copper oxide (CuO) thin film/silicon (Si) nanowire heterojunctions have been fabricated and their optoelectronic performances have been investigated. Vertically aligned n-type Si nanowires have been fabricated using metal-assisted etching (MAE) technique. CuO thin films were synthesized by the sol-gel method and deposited onto the nanowires through spin-coating. Fabricated nanowire heterojunction devices exhibited excellent diode behaviour compared to the planar heterojunction control device. The rectification ratios were found to be 105 and 101 for nanowire and planar heterojunctions, respectively. The improved electrical properties and photosensitivity of the nanowire heterojunction diode was observed, which was related to the three-dimensional nature of the interface between the Si nanowires and the CuO film. Results obtained in this work reveal the potential of Si nanowire-based heterojunctions for various optoelectronic devices.

  6. Lithographically patterned nanowire electrodeposition

    NASA Astrophysics Data System (ADS)

    Xiang, Chengxiang

    Lithographically patterned nanowire electrodeposition (LPNE) is a new method for fabricating polycrystalline metal nanowires using electrodeposition. In LPNE, a sacrificial metal (M1 = silver or nickel) layer, 5 - 100 nm in thickness, is first vapor deposited onto a glass, oxidized silicon, or Kapton polymer film. A photoresist (PR) layer is then deposited, photopatterned, and the exposed Ag or Ni is removed by wet etching. The etching duration is adjusted to produce an undercut ≈300 nm in width at the edges of the exposed PR. This undercut produces a horizontal trench with a precisely defined height equal to the thickness of theM1 layer. Within this trench, a nanowire of metal M2 is electrodeposited (M2 = gold, platinum, palladium, or bismuth). Finally the PR layer and M1 layer are removed. The nanowire height and width can be independently controlled down to minimum dimensions of 5 nm (h) and 11 nm (w), for example, in the case of platinum. These nanowires can be 1 cm in total length. We measure the temperature-dependent resistance of 100 um sections of Au and Pd wires in order to estimate an electrical grain size for comparison with measurements by X-ray diffraction and transmission electron microscopy. Nanowire arrays can be postpatterned to produce two-dimensional arrays of nanorods. Nanowire patterns can also be overlaid one on top of another by repeating the LPNE process twice in succession to produce, for example, arrays of low-impedance, nanowirenanowire junctions. The resistance, R, of single gold nanowires was measured in situ during electrooxidation in aqueous 0.10 M sulfuric acid. Electrooxidation caused the formation of a gold oxide that is approximately 0.8 monolayers (ML) in thickness at +1.1 V vs saturated mercurous sulfate reference electrode (MSE) based upon coulometry and ex situ X-ray photoelectron spectroscopic analysis. As the gold nanowires were electrooxidized, R increased by an amount that depended on the wire thickness, ranging from

  7. Multifunctional Nanowire/film Composites based Bi-modular Sensors for In-situ and Real-time High Temperature Gas Detection

    SciTech Connect

    Gao, Pu-Xian; Lei, Yu

    2013-06-01

    This final report to the Department of Energy/National Energy Technology Laboratory for DE-FE0000870 covers the period from 2009 to June, 2013 and summarizes the main research accomplishments, which can be divided in sensing materials innovation, bimodular sensor demonstration, and new understanding and discoveries. As a matter of fact, we have successfully completed all the project tasks in June 1, 2013, and presented the final project review presentation on the 9th of July, 2013. Specifically, the major accomplishments achieved in this project include: 1) Successful development of a new class of high temperature stable gas sensor nanomaterials based on composite nano-array strategy in a 3D or 2D fashion using metal oxides and perovskite nanostructures. 2) Successful demonstration of bimodular nanosensors using 2D nanofibrous film and 3D composite nanowire arrays using electrical resistance mode and electrochemical electromotive force mode. 3) Series of new discoveries and understandings based on the new composite nanostructure platform toward enhancing nanosensor performance in terms of stability, selectivity, sensitivity and mass flux sensing. In this report, we highlight some results toward these accomplishments.

  8. Submonolayer-Pt-Coated Ultrathin Au Nanowires and Their Self-Organized Nanoporous Film: SERS and Catalysis Active Substrates for Operando SERS Monitoring of Catalytic Reactions.

    PubMed

    Liu, Rui; Liu, Jing-Fu; Zhang, Zong-Mian; Zhang, Li-Qiang; Sun, Jie-Fang; Sun, Meng-Tao; Jiang, Gui-Bin

    2014-03-20

    For their unique properties, core-shell bimetal nanostructures are currently of immense interest. However, their synthesis is not a trivial work, and most works have been conducted on nanoparticles. We report herein a new synthetic tactic for submonolyer-Pt coated ultrathin Au nanowires (NWs). Besides providing a strong electromagnetic field for Raman signal enhancing, the underlined Au NWs markedly enhanced the catalytic activity of Pt atoms through increasing their dispersity and altering their electronic state. The integration of excellent SERS and high catalytic activity within Au@Pt NWs enable it work as platform for catalyzed reaction study. As a proof of principle, the self-organized Au@Pt NWs thin film is employed in operando SERS monitoring of the p-nitrothiophenol reduction process. In addition to providing kinetic data for structure-activity relationship study, the azo-intermidate independent path is also directly witnessed. This synthetic tactic can be extended to other metals, thus offering a general approach to modulate the physical/chemical properties of both core and shell metals. PMID:26270975

  9. NiSe Nanowire Film Supported on Nickel Foam: An Efficient and Stable 3D Bifunctional Electrode for Full Water Splitting.

    PubMed

    Tang, Chun; Cheng, Ningyan; Pu, Zonghua; Xing, Wei; Sun, Xuping

    2015-08-01

    Active and stable electrocatalysts made from earth-abundant elements are key to water splitting for hydrogen production through electrolysis. The growth of NiSe nanowire film on nickel foam (NiSe/NF) in situ by hydrothermal treatment of NF using NaHSe as Se source is presented. When used as a 3D oxygen evolution electrode, the NiSe/NF exhibits high activity with an overpotential of 270 mV required to achieve 20 mA cm(-2) and strong durability in 1.0 M KOH, and the NiOOH species formed at the NiSe surface serves as the actual catalytic site. The system is also highly efficient for catalyzing the hydrogen evolution reaction in basic media. This bifunctional electrode enables a high-performance alkaline water electrolyzer with 10 mA cm(-2) at a cell voltage of 1.63 V. PMID:26136347

  10. Investigation on P-N dual acceptor doped p-type ZnO thin films and subsequent growth of pencil-like nanowires

    NASA Astrophysics Data System (ADS)

    Amiruddin, R.; Devasia, Sebin; Mohammedali, D. K.; Santhosh Kumar, M. C.

    2015-03-01

    Phosphorous and nitrogen dual acceptor doped p-type ZnO (PNZO) have been deposited by spray pyrolysis method on glass substrates. An equimolar doping concentration of P and N were varied from 0.25-1.25 at% with a step of 0.25 at%. Preferred orientation along (002) planes with hexagonal wurzite structure was observed from structural analysis. Morphological analysis reveals uniform distributions of grains. Electrical studies showed dual acceptor doping of P and N in ZnO results in p-type behavior. The optimum doping concentration of P and N was found to be 0.75 at% which exhibited hole concentration of 4.48 × 1018 cm-3 and low resistivity value of 9.6 Ω.cm. Photoluminescence (PL) studies revealed that, as-deposited films exhibit strong UV emission at 383 nm of the spectrum. The surface morphology of the optimum PNZO (0.75 at%) samples were further modified in the form of vertically aligned pencil-like nanowires by modified aqueous chemical growth (ACG) process. During ACG process, more acceptor related defects such as oxygen interstitials (Oi) were formed in the PNZO nanopencils. These acceptor defects induce enhanced emission in the visible region (400 nm to 700 nm) and also promote stable p-type characteristics.

  11. Gold-coated silicon nanowire-graphene core-shell composite film as a polymer binder-free anode for rechargeable lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Kim, Han-Jung; Lee, Sang Eon; Lee, Jihye; Jung, Joo-Yun; Lee, Eung-Sug; Choi, Jun-Hyuk; Jung, Jun-Ho; Oh, Minsub; Hyun, Seungmin; Choi, Dae-Geun

    2014-07-01

    We designed and fabricated a gold (Au)-coated silicon nanowires/graphene (Au-SiNWs/G) hybrid composite as a polymer binder-free anode for rechargeable lithium-ion batteries (LIBs). A large amount of SiNWs for LIB anode materials can be prepared by metal-assisted chemical etching (MaCE) process. The Au-SiNWs/G composite film on current collector was obtained by vacuum filtration using an anodic aluminum oxide (AAO) membrane and hot pressing method. Our experimental results show that the Au-SiNWs/G composite has a stable reversible capacity of about 1520 mA h/g which was maintained for 20 cycles. The Au-SiNWs/G composite anode showed much better cycling performance than SiNWs/polyvinylidene fluoride (PVDF)/Super-P, SiNWs/G composite, and pure SiNWs anodes. The improved electrochemical properties of the Au-SiNWs/G composite anode material is mainly ascribed to the composite's porous network structure.

  12. Nanowire-based All Oxide Solar Cells

    SciTech Connect

    Yang*, Benjamin D. Yuhas and Peidong; Yang, Peidong

    2008-12-07

    We present an all-oxide solar cell fabricated from vertically oriented zinc oxide nanowires and cuprous oxide nanoparticles. Our solar cell consists of vertically oriented n-type zinc oxide nanowires, surrounded by a film constructed from p-type cuprous oxide nanoparticles. Our solution-based synthesis of inexpensive and environmentally benign oxide materials in a solar cell would allow for the facile production of large-scale photovoltaic devices. We found that the solar cell performance is enhanced with the addition of an intermediate oxide insulating layer between the nanowires and the nanoparticles. This observation of the important dependence of the shunt resistance on the photovoltaic performance is widely applicable to any nanowire solar cell constructed with the nanowire array in direct contact with one electrode.

  13. Spontaneous self-welding of silver nanowire networks.

    PubMed

    Seong, Baekhoon; Chae, Ilkyeong; Lee, Hyungdong; Nguyen, Vu Dat; Byun, Doyoung

    2015-03-28

    As an alternative to the traditional indium tin oxide transparent electrode, solution-processed metal nanowire thin film has been a promising candidate due to its flexibility. However, high contact resistance between the nanowires remains a major challenge to improve the performance. Here, we have investigated a one-step process of coating and welding of nanowires on flexible film. An electric field-assisted spray coating method developed in this study could generate finely charged droplets of nanowire solution at high flow rate. While charged droplets deposited on the flexible film, electric charges were flowing through the nanowire network producing electrical current. It induced Joule heating and welding at junctions of the nanowires without post-processing steps. Using the coating method, the silver nanowire thin film could be uniformly deposited evenly on a large area substrate, and spontaneously self-welding was carried out between the nanowire networks. The transparent electrode of the silver nanowire prepared by the concurrent deposition and the self-welding process could improve uniformity, roughness and sheet resistance. PMID:25714503

  14. Synthesis and manipulation of metallic nanowires

    NASA Astrophysics Data System (ADS)

    Bentley, Anne K.

    Metallic nanowires (200 nm in diameter and of varying lengths) were fabricated by electrodeposition into the pores of alumina and polycarbonate templates. Cu-Sn alloy nanowires were electrodeposited from a single electrolyte containing Cu2+ and Sn2+ ions using both constant-potential and pulsed-potential techniques. The composition of the Cu-Sn alloys was characterized by powder X-ray diffraction, and the effect of the electrodeposition conditions on the alloy composition was determined. To manipulate and position the bronze alloy nanowires, nickel caps were grown on each end by sequential electrodeposition of nickel, delta-CuSn, and nickel. The segmented nanowires were ferromagnetic and responded to magnetic fields. In suspensions, the nanowires could be oriented in any direction by applying a magnetic field. The nanowires were dispersed on pairs of nickel stripes photolithographically defined on silicon substrates while an applied magnetic field encouraged the alignment of the nanowires between the stripes. Improved alignment was achieved compared to non-magnetic nanowires. The behavior of suspensions of nickel nanowires in a variety of solvents was examined. The nanowires settle in response to gravity at velocities that fall within the range of velocities predicted by Stokes theory. Nanowires settled more slowly in more viscous solvents. When magnetic fields are applied to the suspensions of nanowires, they scatter light in the plane perpendicular to the nanowire axis and containing the incident light beam. This light scattering effect was utilized to create a magneto-optical switch in which magnetic fields affect the intensity of light reaching a detector. When the suspensions of nanowires were placed in thin film cuvets and oriented with magnetic fields, the nanowires re-oriented the polarization of incident light. The template synthesis technique was adapted to develop an undergraduate laboratory experiment in which students create their own nickel nanowires

  15. Capping of rare earth silicide nanowires on Si(001)

    NASA Astrophysics Data System (ADS)

    Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Reiß, Paul; Niermann, Tore; Schubert, Markus Andreas; Lehmann, Michael; Dähne, Mario

    2016-01-01

    The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along {111} lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

  16. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

    PubMed Central

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-01-01

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays. PMID:26173436

  17. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

    NASA Astrophysics Data System (ADS)

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-07-01

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ~30 cm2 V-1 s-1, on/off ratio of 103-104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.

  18. How Copper Nanowires Grow and How To Control Their Properties.

    PubMed

    Ye, Shengrong; Stewart, Ian E; Chen, Zuofeng; Li, Bo; Rathmell, Aaron R; Wiley, Benjamin J

    2016-03-15

    Scalable, solution-phase nanostructure synthesis has the promise to produce a wide variety of nanomaterials with novel properties at a cost that is low enough for these materials to be used to solve problems. For example, solution-synthesized metal nanowires are now being used to make low cost, flexible transparent electrodes in touch screens, organic light-emitting diodes (OLEDs), and solar cells. There has been a tremendous increase in the number of solution-phase syntheses that enable control over the assembly of atoms into nanowires in the last 15 years, but proposed mechanisms for nanowire formation are usually qualitative, and for many syntheses there is little consensus as to how nanowires form. It is often not clear what species is adding to a nanowire growing in solution or what mechanistic step limits its rate of growth. A deeper understanding of nanowire growth is important for efficiently directing the development of nanowire synthesis toward producing a wide variety of nanostructure morphologies for structure-property studies or producing precisely defined nanostructures for a specific application. This Account reviews our progress over the last five years toward understanding how copper nanowires form in solution, how to direct their growth into nanowires with dimensions ideally suited for use in transparent conducting films, and how to use copper nanowires as a template to grow core-shell nanowires. The key advance enabling a better understanding of copper nanowire growth is the first real-time visualization of nanowire growth in solution, enabling the acquisition of nanowire growth kinetics. By measuring the growth rate of individual nanowires as a function of concentration of the reactants and temperature, we show that a growing copper nanowire can be thought of as a microelectrode that is charged with electrons by hydrazine and grows through the diffusion-limited addition of Cu(OH)2(-). This deeper mechanistic understanding, coupled to an

  19. Photoelectrochemistry of Semiconductor Nanowire Arrays

    SciTech Connect

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  20. Inhomogeneous critical current in nanowire superconducting single-photon detectors

    SciTech Connect

    Gaudio, R. Hoog, K. P. M. op 't; Zhou, Z.; Sahin, D.; Fiore, A.

    2014-12-01

    A superconducting thin film with uniform properties is the key to realize nanowire superconducting single-photon detectors (SSPDs) with high performance and high yield. To investigate the uniformity of NbN films, we introduce and characterize simple detectors consisting of short nanowires with length ranging from 100 nm to 15 μm. Our nanowires, contrary to meander SSPDs, allow probing the homogeneity of NbN at the nanoscale. Experimental results, endorsed by a microscopic model, show the strongly inhomogeneous nature of NbN films on the sub-100 nm scale.

  1. Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation.

    PubMed

    Liu, Mingzhao; Nam, Chang-Yong; Zhang, Lihua

    2015-01-01

    Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. Conventionally reserved for the fabrication of metal thin films, thermal evaporation deposits bismuth into an array of vertical single crystalline nanowires over a flat thin film of vanadium held at RT, which is freshly deposited by magnetron sputtering or thermal evaporation. By controlling the temperature of the growth substrate the length and width of the nanowires can be tuned over a wide range. Responsible for this novel technique is a previously unknown nanowire growth mechanism that roots in the mild porosity of the vanadium thin film. Infiltrated into the vanadium pores, the bismuth domains (~ 1 nm) carry excessive surface energy that suppresses their melting point and continuously expels them out of the vanadium matrix to form nanowires. This discovery demonstrates the feasibility of scalable vapor phase synthesis of high purity nanomaterials without using any catalysts. PMID:26709727

  2. Nanowire Bolometers

    NASA Astrophysics Data System (ADS)

    Peterson, Jeffrey B.; Bolinger, A. T.; Berzyadin, A.; Bock, D.; Garcia, K.

    2003-02-01

    Cryogenic tests of a prototype superconducting nanowire bolometer are presented. The device has such low thermal conductance it should be sensitive when used as a direct detector. Because of the small size of the active area we anticipate that this bolometer may also be fast enough to be used as a wideband mixer.

  3. Silver nanowires

    NASA Astrophysics Data System (ADS)

    Graff, A.; Wagner, D.; Ditlbacher, H.; Kreibig, U.

    2005-07-01

    Free silver nanowires were produced in aqueous electrolyte by a novel chemical reaction. Their diameters are about 27 nm, the lengths range up to more than 70 μm, yielding extreme length to thickness-ratios up to 2500. Their structure was identified by TEM analysis (SAED) and HRTEM to consist of a lattice aligned bundle of five monocrystalline rods of triangular cross-section forming an almost regular pentagonal cross-section. It is demonstrated that, for application purposes, single free nanowires can be mounted between contact areas. This manipulation is enabled by observing the nanowires in real time at atmosphere by Zsigmondy-Siedentopf farfield darkfield microscopy. Experimental results are presented concerning electrical dc conductivity and optical plasmon polariton excitation, the latter obtained from a single free wire without substrate and a single wire deposited on quartz glass. We also report about a present research cooperation with the Graz group of Aussenegg and Krenn which is devoted to investigate plasmon propagation in our Ag nanowires and to prove application possibilities as information guide fibers in analogy to optical fibers which may be integrated into micro- and nanoelectronic circuits.

  4. Study of a QCM dimethyl methylphosphonate sensor based on a ZnO-modified nanowire-structured manganese dioxide film.

    PubMed

    Pei, Zhifu; Ma, Xingfa; Ding, Pengfei; Zhang, Wuming; Luo, Zhiyuan; Li, Guang

    2010-01-01

    Sensitive, selective and fast detection of chemical warfare agents is necessary for anti-terrorism purposes. In our search for functional materials sensitive to dimethyl methylphosphonate (DMMP), a simulant of sarin and other toxic organophosphorus compounds, we found that zinc oxide (ZnO) modification potentially enhances the absorption of DMMP on a manganese dioxide (MnO(2)) surface. The adsorption behavior of DMMP was evaluated through the detection of tiny organophosphonate compounds with quartz crystal microbalance (QCM) sensors coated with ZnO-modified MnO(2) nanofibers and pure MnO(2) nanofibers. Experimental results indicated that the QCM sensor coated with ZnO-modified nanostructured MnO(2) film exhibited much higher sensitivity and better selectivity in comparison with the one coated with pure MnO(2) nanofiber film. Therefore, the DMMP sensor developed with this composite nanostructured material should possess excellent selectivity and reasonable sensitivity towards the tiny gaseous DMMP species. PMID:22163653

  5. Study of a QCM Dimethyl Methylphosphonate Sensor Based on a ZnO-Modified Nanowire-Structured Manganese Dioxide Film

    PubMed Central

    Pei, Zhifu; Ma, Xingfa; Ding, Pengfei; Zhang, Wuming; Luo, Zhiyuan; Li, Guang

    2010-01-01

    Sensitive, selective and fast detection of chemical warfare agents is necessary for anti-terrorism purposes. In our search for functional materials sensitive to dimethyl methylphosphonate (DMMP), a simulant of sarin and other toxic organophosphorus compounds, we found that zinc oxide (ZnO) modification potentially enhances the absorption of DMMP on a manganese dioxide (MnO2) surface. The adsorption behavior of DMMP was evaluated through the detection of tiny organophosphonate compounds with quartz crystal microbalance (QCM) sensors coated with ZnO-modified MnO2 nanofibers and pure MnO2 nanofibers. Experimental results indicated that the QCM sensor coated with ZnO-modified nanostructured MnO2 film exhibited much higher sensitivity and better selectivity in comparison with the one coated with pure MnO2 nanofiber film. Therefore, the DMMP sensor developed with this composite nanostructured material should possess excellent selectivity and reasonable sensitivity towards the tiny gaseous DMMP species. PMID:22163653

  6. Solution-processed copper-nickel nanowire anodes for organic solar cells.

    PubMed

    Stewart, Ian E; Rathmell, Aaron R; Yan, Liang; Ye, Shengrong; Flowers, Patrick F; You, Wei; Wiley, Benjamin J

    2014-06-01

    This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. PMID:24777655

  7. Nonvolatile resistive switching in single crystalline ZnO nanowires.

    PubMed

    Yang, Yuchao; Zhang, Xiaoxian; Gao, Min; Zeng, Fei; Zhou, Weiya; Xie, Sishen; Pan, Feng

    2011-04-01

    We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories. PMID:21394361

  8. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  9. Electrospun metallic nanowires: Synthesis, characterization, and applications

    NASA Astrophysics Data System (ADS)

    Khalil, Abdullah; Singh Lalia, Boor; Hashaikeh, Raed; Khraisheh, Marwan

    2013-11-01

    Metals are known to have unique thermal, mechanical, electrical, and catalytic properties. On the other hand, metallic nanowires are promising materials for variety of applications such as transparent conductive film for photovoltaic devices, electrodes for batteries, as well as nano-reinforcement for composite materials. Whereas varieties of methods have been explored to synthesize metal nanowires with different characteristics, electrospinning has also been found to be successful for that purpose. Even though electrospinning of polymeric nanofibers is a well-established field, there are several challenges that need to be overcome to use the electrospinning technique for the fabrication of metallic nanowires. These challenges are mainly related to the multi-steps fabrication process and its relation to the structure evolution of the nanowires. In addition to reviewing the literature, this article identifies promising avenues for further research in this area with particular emphasis on the applications that nonwoven metal wires confined in a nano-scale can open.

  10. Synthesis of Cu Nanowires with Polycarbonate Template

    SciTech Connect

    Naderi, N.; Hashim, M. R.

    2011-03-30

    Copper nanowires were fabricated into arrays of pores on ion-track etched polycarbonate membrane, using electrodeposition technique. We coated Au thin film layer on one side of membrane in order to have electrical contact. X-ray diffraction analysis shows that the Au layer has a strong (111) texture. The pores which have cylindrical shape with 6 micron length and 30 nm diameter were filled by copper atoms, fabricating Cu nanowires. Energy Disperse Spectrometry (EDS) indicated the picks of copper which filled the pores of substrate. The morphology and structure of Cu nanowires were characterized by SEM, TEM and XRD, respectively. The results show that although all the nanowires do not have uniform diameter, but all of them are continuous along the length.

  11. Fabrication and properties of silicon carbide nanowires

    NASA Astrophysics Data System (ADS)

    Shim, Hyun Woo

    2008-12-01

    (compressive) normal loads. Here, we show that the friction forces of SiC nanowires films is 5--12 that of macroscopic solids. For nanowires films, the maximum static frictional force varies linearly with, but is not proportional to, normal load; it increases linearly with interface area; and it is independent of loading speed. To summarize, the combined experimental and theoretical studies in this thesis demonstrated unique structures and surface properties of SiC nanowires, including: (1) Periodical twinning, surface faceting, and structure transition, [Shim & Huang, Appl. Phy. Lett. 90, 083106] (2) Twinning growth mechanism, [Shim, Zhang & Huang, J. Appl. Phys., submitted; Zhang, Shim, & Huang, Appl. Phys. Lett. 92, 261908] (3) Self-integration (nanowebs formation) during growth, [Shim & Huang, Nanotechnology 18, 335607] (4) Thermal stability and self-integration by annealing, [Shim, Kuppers & Huang, J. Nanosci. Nanotech. 8, 3999] and (5) Strong friction of nanowires film. [Shim, Kuppers & Huang, NATURE Nanotech., submitted] The collection of these results enhances the understanding of SiC nanowires growth, the better control of their microstructure and integration, and the application of ceramic nanowires as friction material at high temperature.

  12. Energy harvesting from vertically aligned PZT nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  13. Ultrathin W18O49 nanowire assemblies for electrochromic devices.

    PubMed

    Liu, By Jian-Wei; Zheng, Jing; Wang, Jin-Long; Xu, Jie; Li, Hui-Hui; Yu, Shu-Hong

    2013-08-14

    Ordered W18O49 nanowire thin films were fabricated by Langmuir-Blodgett (LB) technique in the presence of poly(vinyl pyrrolidone) coating. The well-organized monolayer of W18O49 nanowires with periodic structures can be readily used as electrochromic sensors, showing reversibly switched electrochromic properties between the negative and positive voltage. Moreover, the electrochromism properties of the W18O49 nanowire films exhibit significant relationship with their thickness. The coloration/bleaching time was around 2 s for the W18O49 nanowire monolayer, which is much faster than the traditional tungsten oxide nanostructures. Moreover, the nanowire devices display excellent stability when color switching continues, which may provide a versatile and promising platform for electrochromism device, smart windows, and other applications. PMID:23869487

  14. Fabrication, characterization and applications of magnetic nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sharma, Gaurav

    Fe-Co-Ni ternary alloy nanowire arrays 32--106 nm in diameter are fabricated within nanoporous alumina membranes using 15 Vrms alternating current electrodeposition at frequencies of 50, 250, 500, 750, and 1000 Hz. The alumina membranes, 10--15 microns thick, are synthesized by anodization of aluminum foil using a two-step technique to increase pore uniformity. The alumina membrane structure is tailored with the end aim being uniform magnetic nanowire electrodeposition. Using an electrodeposition frequency of 1000 Hz, 15 Vrms, consistently and repeatably yield nanowire arrays over membranes several cm2 in extent. Electrochemical Impedance Spectroscopy (EIS) is used to explain the effects of AC electrodeposition frequency. The impedance of the residual alumina barrier layer, separating the underlying aluminum metal and the nanoporous membrane, decreases drastically with electrodeposition frequency facilitating uniform pore-filling of samples several cm2 in area. The magnetic coercivity and hysteresis loop squareness-ratio (Mr/Ms) were studied as functions of electrolyte composition, nanowire diameter, and nanowire aspect ratio. Anodic polarization studies on thin films having alloy compositions identical to the nanowires display excellent corrosion resistance properties. Two potential applications of the nanowire arrays are investigated. Iron nanowire arrays, oriented perpendicular to the substrate, are fabricated by electrodeposition of iron in nanoporous alumina membranes, followed by precise wet etching of the alumina membrane to partially expose the nanowire array. It is shown that oxidation of standing iron nanowire arrays, at 600°C in an oxygen ambient leads to standing alpha-Fe2O3 (hematite) nanowire arrays. These hematite nanowire arrays show a distinct photocurrent response and can be used as photocatalysts. Second, protein adsorption studies on standing Fe-Co-Ni nanowire arrays and flat Fe-Co-Ni thin films show that nanowire array morphology leads to

  15. Coupled Array of Superconducting Nanowires

    NASA Astrophysics Data System (ADS)

    Ursache, Andrei

    2005-03-01

    We present experiments that investigate the collective behavior of arrays of superconducting lead nanowires with diameters smaller than the coherence length. The ultrathin (˜15nm) nanowires are grown by pulse electrodeposition into porous self-assembled P(S-b-MMA) diblock copolymer templates. The closely packed (˜24 nm spacing) 1-D superconducting nanowires stand vertically upon a thin normal (Au or Pt) film in a brush-like geometry. Thereby, they are coupled to each other by Andreev reflection at the S-N (Pb-Au) point contact interfaces. Magnetization measurements reveal that the ZFC/FC magnetic response of the coupled array system can be irreversible or reversible, depending on the orientation, perpendicular or parallel, of the applied magnetic field with respect to the coupling plane. As found by electric transport measurements, the coupled array system undergoes an in plane superconducting resistive transition at a temperature smaller than the Tc of an individual nanowire. Current-voltage characteristics throughout the transition region are also discussed. This work was supported by NSF grant DMI-0103024 and DMR-0213695.

  16. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources. PMID:12618824

  17. Sub-1 nm Nickel Molybdate Nanowires as Building Blocks of Flexible Paper and Electrochemical Catalyst for Water Oxidation.

    PubMed

    Liu, Huiling; Li, Haoyi; He, Peilei; Wang, Xun

    2016-02-24

    Sub-1 nm, extremely long nickel molybdate nanowires are synthesized based on a good/poor solvent system. The ultrathin nanowires can be hierarchically assembled into flexible, free-standing films with good mechanical properties. Compared with the large-size counterpart, nickel molybdate ultrathin nanowires display promising oxygen evolution reaction catalytic performance derived from the ultrathin feature. PMID:26724910

  18. Chemical Sensing with Nanowires

    NASA Astrophysics Data System (ADS)

    Penner, Reginald M.

    2012-07-01

    Transformational advances in the performance of nanowire-based chemical sensors and biosensors have been achieved over the past two to three years. These advances have arisen from a better understanding of the mechanisms of transduction operating in these devices, innovations in nanowire fabrication, and improved methods for incorporating receptors into or onto nanowires. Nanowire-based biosensors have detected DNA in undiluted physiological saline. For silicon nanowire nucleic acid sensors, higher sensitivities have been obtained by eliminating the passivating oxide layer on the nanowire surface and by substituting uncharged protein nucleic acids for DNA as the capture strands. Biosensors for peptide and protein cancer markers, based on both semiconductor nanowires and nanowires of conductive polymers, have detected these targets at physiologically relevant concentrations in both blood plasma and whole blood. Nanowire chemical sensors have also detected several gases at the parts-per-million level. This review discusses these and other recent advances, concentrating on work published in the past three years.

  19. Nanomanufacturing of silica nanowires: Synthesis, characterization and applications

    NASA Astrophysics Data System (ADS)

    Sekhar, Praveen Kumar

    In this research, selective and bottom-up manufacturing of silica nanowires on silicon (Si) and its applications has been investigated. Localized synthesis of these nanowires on Si was achieved by metal thin film catalysis and metal ion implantation based seeding approach. The growth mechanism of the nanowires followed a vapor-liquid-solid (VLS) mechanism. Mass manufacturing aspects such as growth rate, re-usability of the substrate and experimental growth model were also investigated. Further, silica nanowires were explored as surface enhanced Raman (SER) substrate and immunoassay templates towards optical and electrochemical detection of cancer biomarkers respectively. Investigating their use in photonic applications, optically active silica nanowires were synthesized by erbium implantation after nanowire growth and implantation of erbium as a metal catalyst in Si to seed the nanowires. Ion implantation of Pd in Si and subsequent annealing in Ar at 1100 0 C for 60 mins in an open tube furnace resulted in silica nanowires of diameters ranging from 15 to 90 nm. Similarly, Pt was sputtered on to Si and further annealed to obtain silica nanowires of diameters ranging from 50 to 500 nm. Transmission electron microscopy studies revealed the amorphous nature of the wires. In addition, nano-sized Pd catalyst was found along the body of the nanowires seeded by Pd implantation into Si. After functionalization of the wires with 3 - AminoPropylTriMethoxySilane (APTMS), the Pd decorated silica nanowires served as an SER substrate exhibiting a sensitivity of 10 7 towards the detection of interleukin-10 (IL-10, a cancer biomarker) with higher spatial resolution. Voltammetric detection of IL-10 involved silica nanowires synthesized by Pd thin film catalysis on Si as an immunoassay template. Using the electrochemical scheme, the presence of IL-10 was detected down to 1fg/mL in ideal pure solution and 1 pg/mL in clinically relevant samples. Time resolved photoluminescence (PL

  20. Propulsion of nanowire diodes.

    PubMed

    Calvo-Marzal, Percy; Sattayasamitsathit, Sirilak; Balasubramanian, Shankar; Windmiller, Joshua R; Dao, Cuong; Wang, Joseph

    2010-03-14

    The propulsion of semiconductor diode nanowires under external AC electric field is described. Such fuel-free electric field-induced nanowire propulsion offers considerable promise for diverse technological applications. PMID:20177595

  1. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

    NASA Astrophysics Data System (ADS)

    Wang, Bing; Xu, Ping

    2009-01-01

    SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders. The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) spectra analysis. The new peaks at 356, 450, and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed, implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects. The growth mechanism of these nanostructures belongs to the vapour-liquid-solid (VLS) mechanism.

  2. Semiconductor Nanowires for Photoelectrochemical Water Splitting

    NASA Astrophysics Data System (ADS)

    Hwang, Yun Jeong

    Photolysis of water with semiconductor materials has been investigated intensely as a clean and renewable energy resource by storing solar energy in chemical bonds such as hydrogen. One-dimensional (1D) nanostructures such as nanowires can provide several advantages for photoelectrochemical (PEC) water splitting due to their high surface areas and excellent charge transport and collection efficiency. This dissertation discusses various nanowire photoelectrodes for single or dual semiconductor systems, and their linked PEC cells for self-driven water splitting. After an introduction of solar water splitting in the first chapter, the second chapter demonstrates water oxidative activities of hydrothermally grown TiO2 nanowire arrays depending on their length and surface properties. The photocurrents with TiO2 nanowire arrays approach saturation due to their poor charge collection efficiency with longer nanowires despite increased photon absorption efficiency. Epitaxial grains of rutile atomic layer deposition (ALD) shell on TiO2 nanowire increase the photocurrent density by 1.5 times due to improved charge collection efficiency especially in the short wavelength region. Chapter three compares the photocurrent density of the planar Si and Si nanowire arrays coated by anatase ALD TiO 2 thin film as a model system of a dual bandgap system. The electroless etched Si nanowire coated by ALD TiO2 (Si EENW/TiO2) shows 2.5 times higher photocurrent density due to lower reflectance and higher surface area. Also, this chapter illustrates that n-Si/n-TiO2 heterojunction is a promising structure for the photoanode application of a dual semiconductor system, since it can enhance the photocurrent density compared to p-Si/n-TiO 2 junction with the assistance of bend banding at the interface. Chapter four demonstrates the charge separation and transport of photogenerated electrons and holes within a single asymmetric Si/TiO2 nanowire. Kelvin probe force microscopy measurements show

  3. Nanowire-based detector

    DOEpatents

    Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

    2014-06-24

    Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

  4. Detecting Airborne Mercury by Use of Gold Nanowires

    NASA Technical Reports Server (NTRS)

    Ryan, Margaret; Shevade, Abhijit; Kisor, Adam; Homer, Margie; Soler, Jessica; Mung, Nosang; Nix, Megan

    2009-01-01

    Like the palladium chloride (PdCl2) films described in the immediately preceding article, gold nanowire sensors have been found to be useful for detecting airborne elemental mercury at concentrations on the order of parts per billion (ppb). Also like the PdCl2 films, gold nanowire sensors can be regenerated under conditions much milder than those necessary for regeneration of gold films that have been used as airborne-Hg sensors. The interest in nanowire sensors in general is prompted by the expectation that nanowires of a given material covering a given surface may exhibit greater sensitivity than does a film of the same material because nanowires have a greater surface area. In preparation for experiments to demonstrate this sensor concept, sensors were fabricated by depositing gold nanowires, variously, on microhotplate or microarray sensor substrates. In the experiments, the electrical resistances were measured while the sensors were exposed to air at a temperature of 25 C and relative humidity of about 30 percent containing mercury at various concentrations from 2 to 70 ppb (see figure). The results of this and other experiments have been interpreted as signifying that sensors of this type can detect mercury at ppb concentrations in room-temperature air and can be regenerated by exposure to clean flowing air at temperatures <40 C.

  5. The Electrodeposition of Lead Telluride Nanowires for Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    Hillman, Peter

    The electrodeposition of PbTe nanowires for thermoelectric applications is presented in this thesis. The Pb-Te electrochemical system was investigated to determine the optimal conditions for deposition. It was found that citric acid complexed tellurium in solution shifting its reduction potential cathodically. The shift in reduction potential led to the deposition of pure PbTe without any observable excess tellurium. Nanowires of PbTe were doped p-type and n-type through the addition of thallium and indium to the plating solution. Indium-doped nanowire arrays showed a linear relation between lattice parameter and atomic percent indium confirming successful incorporation. The lattice parameter trend in thallium-doped nanowire arrays was linear only after annealing. In the case of thallium doping, thallium tellurides were formed, which upon annealing formed a solid solution with PbTe. The results of the thallium doping study led to the investigation of the Tl-Te electrochemical system. Cyclic voltammagrams were used to determine the deposition mechanism of TlTe and Tl5Te3. Thin films and nanowire arrays of these compounds were deposited. This was the first study of the electrochemical Tl-Te system and the first report of the electrodeposition of TlTe and Tl5Te3. Thermoelectric measurements were conducted on thin films and nanowire arrays of PbTe. The Seebeck coefficient and resistivity of PbTe thin film were measured. Results from thin films were complicated by the Pt substrate on which PbTe was deposited. Subtracting the effects of the Pt layer suggested PbTe thin films could have a large zT, however further work is needed to confirm this result. Resistivity measurements on nanowire arrays were also conducted. Despite efforts to minimize the oxidation of PbTe nanowires, good electrical contacts could not be created. The resistivity of nanowire arrays were orders of magnitude higher than expected. As a result of their low conductivity, the thermoelectric efficiency

  6. Electron beam irradiated silver nanowires for a highly transparent heater

    NASA Astrophysics Data System (ADS)

    Hong, Chan-Hwa; Oh, Seung Kyu; Kim, Tae Kyoung; Cha, Yu-Jung; Kwak, Joon Seop; Shin, Jae-Heon; Ju, Byeong-Kwon; Cheong, Woo-Seok

    2015-12-01

    Transparent heaters have attracted increasing attention for their usefulness in vehicle windows, outdoor displays, and periscopes. We present high performance transparent heaters based on Ag nanowires with electron beam irradiation. We obtained an Ag-nanowire thin film with 48 ohm/sq of sheet resistance and 88.8% (substrate included) transmittance at 550 nm after electron beam irradiation for 120 sec. We demonstrate that the electron beam creates nano-soldering at the junctions of the Ag nanowires, which produces lower sheet resistance and improved adhesion of the Ag nanowires. We fabricated a transparent heater with Ag nanowires after electron beam irradiation, and obtained a temperature of 51 °C within 1 min at an applied voltage of 7 V. The presented technique will be useful in a wide range of applications for transparent heaters.

  7. Electron beam irradiated silver nanowires for a highly transparent heater

    PubMed Central

    Hong, Chan-Hwa; Oh, Seung Kyu; Kim, Tae Kyoung; Cha, Yu-Jung; Kwak, Joon Seop; Shin, Jae-Heon; Ju, Byeong-Kwon; Cheong, Woo-Seok

    2015-01-01

    Transparent heaters have attracted increasing attention for their usefulness in vehicle windows, outdoor displays, and periscopes. We present high performance transparent heaters based on Ag nanowires with electron beam irradiation. We obtained an Ag-nanowire thin film with 48 ohm/sq of sheet resistance and 88.8% (substrate included) transmittance at 550 nm after electron beam irradiation for 120 sec. We demonstrate that the electron beam creates nano-soldering at the junctions of the Ag nanowires, which produces lower sheet resistance and improved adhesion of the Ag nanowires. We fabricated a transparent heater with Ag nanowires after electron beam irradiation, and obtained a temperature of 51 °C within 1 min at an applied voltage of 7 V. The presented technique will be useful in a wide range of applications for transparent heaters. PMID:26639760

  8. Templated Synthesis of Uniform Perovskite Nanowire Arrays.

    PubMed

    Ashley, Michael J; O'Brien, Matthew N; Hedderick, Konrad R; Mason, Jarad A; Ross, Michael B; Mirkin, Chad A

    2016-08-17

    While the chemical composition of semiconducting metal halide perovskites can be precisely controlled in thin films for photovoltaic devices, the synthesis of perovskite nanostructures with tunable dimensions and composition has not been realized. Here, we describe the templated synthesis of uniform perovskite nanowires with controlled diameter (50-200 nm). Importantly, by providing three examples (CH3NH3PbI3, CH3NH3PbBr3, and Cs2SnI6), we show that this process is composition general and results in oriented nanowire arrays on transparent conductive substrates. PMID:27501464

  9. Fabrication of multilayer nanowires

    NASA Astrophysics Data System (ADS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-05-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  10. Lithographically patterned nanowire electrodeposition.

    PubMed

    Menke, E J; Thompson, M A; Xiang, C; Yang, L C; Penner, R M

    2006-11-01

    Nanowire fabrication methods can be classified either as 'top down', involving photo- or electron-beam lithography, or 'bottom up', involving the synthesis of nanowires from molecular precursors. Lithographically patterned nanowire electrodeposition (LPNE) combines attributes of photolithography with the versatility of bottom-up electrochemical synthesis. Photolithography defines the position of a sacrificial nickel nanoband electrode, which is recessed into a horizontal trench. This trench acts as a 'nanoform' to define the thickness of an incipient nanowire during its electrodeposition. The electrodeposition duration determines the width of the nanowire. Removal of the photoresist and nickel exposes a polycrystalline nanowire--composed of gold, platinum or palladium--characterized by thickness and width that can be independently controlled down to 18 and 40 nm, respectively. Metal nanowires prepared by LPNE may have applications in chemical sensing and optical signal processing, and as interconnects in nanoelectronic devices. PMID:17057701

  11. Electrochemical fabrication of 2D and 3D nickel nanowires using porous anodic alumina templates

    NASA Astrophysics Data System (ADS)

    Mebed, A. M.; Abd-Elnaiem, Alaa M.; Al-Hosiny, Najm M.

    2016-06-01

    Mechanically stable nickel (Ni) nanowires array and nanowires network were synthesized by pulse electrochemical deposition using 2D and 3D porous anodic alumina (PAA) templates. The structures and morphologies of as-prepared films were characterized by X-ray diffraction and scanning electron microscopy, respectively. The grown Ni nanowire using 3D PAA revealed more strength and larger surface area than has grown Ni use 2D PAA template. The prepared nanowires have a face-centered cubic crystal structure with average grain size 15 nm, and the preferred orientation of the nucleation of the nanowires is (111). The diameter of the nanowires is about 50-70 nm with length 3 µm. The resulting 3D Ni nanowire lattice, which provides enhanced mechanical stability and an increased surface area, benefits energy storage and many other applications which utilize the large surface area.

  12. Direct electrical transport measurement on a single thermoelectric nanowire embedded in an alumina template.

    PubMed

    Ben Khedim, Meriam; Cagnon, Laurent; Garagnon, Christophe; Serradeil, Valerie; Bourgault, Daniel

    2016-04-28

    Electrical conductivity is a key parameter to increase the performance of thermoelectric materials. However, the measurement of such performance remains complex for 1D structures, involving tedious processing. In this study, we present a non-destructive, rapid and easy approach for the characterization of electrical conductivity of Bi2Te3 based single nanowires. By controlling the nanowire overgrowth, each nanowire emerges in the form of a micrometric hemisphere constituting a unique contact zone for direct nanoprobing. As nanowires need no preliminary preparation and remain in their template during measurement, we avoid oxidation effects and time-consuming processing. Electrical transport results show a low nanowire resistivity for compact nanowires obtained at low overpotential. Such values are comparable to bulk materials and thin films. This method not only confirmed its reliability, but it could also be adopted for other semiconducting or metallic electrodeposited nanowires. PMID:27086560

  13. Metal-oxide Nanowires for Toxic Gas Detection

    SciTech Connect

    Devineni, D. P.; Stormo, S.; Kempf, W.; Schenkel, J.; Behanan, R.; Lea, Alan S.; Galipeau, David W.

    2007-01-02

    The feasibility of using Electric field enhanced oxidation (EFEO) to fabricate metal-oxide nanowires for sensing toxic gases was investigated. The effects of fabrication parameters such as film thickness, ambient relative humidity, atomic force microscope (AFM) tip bias voltage, force, scan speed and number of scans on the growth of nanowires were determined. The chemical composition of indium-oxide nanowires was verified using Auger electron spectroscopy. It was found that oxygen to indium ration was 1.69, 1.72, 1.71 and 1.84 at depths of 0, 1.3, 2.5, and 3.8 nm, which was near the 1.5:1 expected for stoichiometric indium-oxide film. Future work will include characterizing the electrical and gas sensing properties of the metal-oxide nanowires.

  14. Microchip for the Measurement of Seebeck Coefficients of Single Nanowires

    NASA Astrophysics Data System (ADS)

    Völklein, F.; Schmitt, M.; Cornelius, T. W.; Picht, O.; Müller, S.; Neumann, R.

    2009-07-01

    Bismuth nanowires were electrochemically grown in ion track-etched polycarbonate membranes. Micromachining and microlithography were employed to realize a newly developed microchip for Seebeck coefficient measurements on individual nanowires. By anisotropic etching of a (100) Si wafer, an 800-nm-thick SiO2/Si3N4 membrane was prepared in the chip center. The low thermal conductivity of the membrane is crucial to obtain the required temperature difference Δ T along the nanowire. The wire is electrically contacted to thin metal pads which are patterned by a new method of microscopic exposure of photoresist and a lift-off process. A Δ T between the two pairs of contact pads, located on the membrane, is established by a thin-film heater. Applying the known Seebeck coefficient of a reference film, the temperature difference at this gap is determined. Using Δ T and the measured Seebeck voltage U of the nanowire, its Seebeck coefficient can be calculated.

  15. Magnetization reversal in permalloy ferromagnetic nanowires investigated with magnetoresistance measurements

    NASA Astrophysics Data System (ADS)

    Oliveira, A. B.; Rezende, S. M.; Azevedo, A.

    2008-07-01

    The magnetization reversal process in single Permalloy (Ni81Fe19) nanowires has been investigated by magnetoresistance measurements as a function of the angle between the applied field and the wire direction. The Permalloy nanostructures fabricated on an ultrathin film by atomic force microscopy consist of two large rectangular pads connected by a nanowire with the shape of a long thin narrow tape. For each field direction in the plane of the film the dependence of the magnetoresistance on the field value exhibits two main contributions: one from the pads and one from the nanowire. The contribution from the pads is due to a usual anisotropic magnetoresistance characteristic of coherent magnetization rotation, whereas the contribution from the nanowire is an abrupt transition at the switching field. The dependence of the switching field on the in-plane field angle is quantitatively described by a model of nucleation field with the buckling magnetization rotation mode.

  16. Silicon Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Kamins, Theodore

    2006-03-01

    Metal-catalyzed, self-assembled, one-dimensional semiconductor nanowires are being considered as possible device elements to augment and supplant conventional electronics and to extend the use of CMOS beyond the physical and economic limits of conventional technology. Such nanowires can create nanostructures without the complexity and cost of extremely fine scale lithography. The well-known and controllable properties of silicon make silicon nanowires especially attractive. Easy integration with conventional electronics will aid their acceptance and incorporation. For example, connections can be formed to both ends of a nanowire by growing it laterally from a vertical surface formed by etching the top silicon layer of a silicon-on-insulator structure into isolated electrodes. Field-effect structures are one class of devices that can be readily built in silicon nanowires. Because the ratio of surface to volume in a thin nanowire is high, conduction through the nanowire is very sensitive to surface conditions, making it effective as the channel of a field-effect transistor or as the transducing element of a gas or chemical sensor. As the nanowire diameter decreases, a greater fraction of the mobile charge can be modulated by a given external charge, increasing the sensitivity. Having the gate of a nanowire transistor completely surround the nanowire also enhances the sensitivity. For a field-effect sensor to be effective, the charge must be physically close to the nanowire so that the majority of the compensating charge is induced in the nanowire and so that ions in solution do not screen the charge. Because only induced charge is being sensed, a coating that selectively binds the target species should be added to the nanowire surface to distinguish between different species in the analyte. The nanowire work at Hewlett-Packard Laboratories was supported in part by the Defense Advanced Research Projects Agency.

  17. The concentration effect of capping agent for synthesis of silver nanowire by using the polyol method

    SciTech Connect

    Lin, Jian-Yang; Hsueh, Yu-Lee; Huang, Jung-Jie

    2014-06-01

    Silver nanowires were synthesized by the polyol method employing ethylene glycol, Poly(N-vinylpyrrolidone) (PVP) and silver nitrate (AgNO{sub 3}) as the precursors. Most of the studies used metal salts (PtCl{sub 2}, NaCl) as seed precursor to synthesize the silver nanowires. In the study, the metal salts were not used and the concentration of capping agent was changed to observe the aspect ratio of silver nanowires. The experimental results showed that controlling synthesis temperature, Poly(N-vinylpyrrolidone) (PVP) molecular weight, reactant concentrations, and addition rates of AgNO{sub 3} affects the growth characteristics of silver nanowires. Field-emission scanning electron microscopy, UV–vis spectrophotometry, and X-ray diffractometry were employed to characterize the silver nanowires. As increasing the concentration of PVP, the silver nanowire diameter widened and resulted in a smaller aspect ratio. We successfully prepared silver nanowires (diameter: 170 nm, length: 20 μm). The silver nanowire thin film suspension showed high transmittance, low sheet resistance, and may be used for transparent conductive film applications. - Graphical abstract: The FE-SEM image shows that nanostructures with considerable quantities of silver nanowires can also be produced when the PVP (Mw=360 K)/AgNO{sub 3} molar ratio was 2.5. - Highlights: • The polyol method was used to synthesize of silver nanowire. • The metal seed precursors were not used before synthesizing the silver nanowires. • The silver nanowire diameter and length was 170 nm and 20 μm, respectively. • Silver nanowire film with high transmittance (>85%) and low sheet resistance (<110 Ω/sq)

  18. Size dependence of transition temperature in polymer nanowires.

    PubMed

    Nakanishi, Sana; Yoshikawa, Hirofumi; Shoji, Satoru; Sekkat, Zouheir; Kawata, Satoshi

    2008-03-27

    We studied the effect of changing temperature on the mechanical properties of nanosized poly(methyl methacrylate) wires fabricated by two-photon fabrication. At around room temperature, the nanowires showed a transition temperature where the shear modulus suddenly changed. This transition temperature was observed to decrease more than 40 K by decreasing the radius of the nanowires from 450 to 150 nm. This size is several times larger in nanowires than reported values of polymer thin film thickness showing a depression of the glass transition temperature. PMID:18318534

  19. Electronic band structure calculations of bismuth-antimony nanowires

    NASA Astrophysics Data System (ADS)

    Levin, Andrei; Dresselhaus, Mildred

    2012-02-01

    Alloys of bismuth and antimony received initial interest due to their unmatched low-temperature thermoelectric performance, and have drawn more recent attention as the first 3D topological insulators. One-dimensional bismuth-antimony (BiSb) nanowires display interesting quantum confinement effects, and are expected to exhibit even better thermoelectric properties than bulk BiSb. Due to the small, anisotropic carrier effective masses, the electronic properties of BiSb nanowires show great sensitivity to nanowire diameter, crystalline orientation, and alloy composition. We develop a theoretical model for calculating the band structure of BiSb nanowires. For a given crystalline orientation, BiSb nanowires can be in the semimetallic, direct semiconducting, or indirect semiconducting phase, depending on nanowire diameter and alloy composition. These ``phase diagrams'' turn out to be remarkably similar among the different orientations, which is surprising in light of the anisotropy of the bulk BiSb Fermi surface. We predict a novel direct semiconducting phase for nanowires with diameter less than ˜15 nm, over a narrow composition range. We also find that, in contrast to the bulk and thin film BiSb cases, a gapless state with Dirac dispersion cannot be realized in BiSb nanowires.

  20. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  1. Silicon nanowires: Growth, transport and device physics

    NASA Astrophysics Data System (ADS)

    Garnett, Erik Christian

    2009-11-01

    Silicon is the second most abundant element in the earth's crust and has been the backbone of the information technology revolution. It is the most well-studied material in all of solid-state chemistry and physics and has been used to make a variety of devices including transistors, resonators, and solar cells. Nanowires could provide advantages over bulk silicon; however, there are many fundamental challenges that must be overcome in order to use them in high-performance, reproducible devices. The first chapter of this dissertation gives an introduction to nanoscience with an emphasis on the working principles of the nanowire devices that are discussed later and the problems that face nanowire implementation. Chapter two demonstrates that platinum nanoparticles can be substituted for gold as the nanowire growth catalyst without sacrificing crystalline quality, epitaxial growth or electrical properties. Replacing gold with a clean-room compatible material such as platinum is important to allow for nanowire integration into microfabricated devices. Chapter three focuses on making horizontal surround-gate field effect transistors for capacitance-voltage measurements. These devices are used to extract the dopant profile and density of interface states from individual nanowires, showing results consistent with planar control samples and simulations. The results are encouraging because they suggest low surface recombination velocities (similar to bulk planar wafers) should be possible as long as the nanowire surface is smooth and well-faceted. Chapter four demonstrates two low-cost, scalable methods for fabricating silicon nanowire photovoltaics. Because of the rough surface induced by the electroless etching process and the poor junction quality from the nanocrystalline chemical vapor deposition film, the efficiency of cells made with the first approach is relatively low at about 0.5%. The second approach, using an assembly of silica beads, deep reactive ion etching

  2. The Self- and Directed Assembly of Nanowires

    NASA Astrophysics Data System (ADS)

    Smith, Benjamin David

    nanowires rapidly sedimented due to gravity onto a glass cover slip to concentrate and form a dense film. Particles and assemblies were imaged using inverted optical microscopy. We quantitatively analyzed the images and movies captured in order to track and classify particles and classify the overall arrays formed. We then correlated how particle characteristics, e.g., materials, size, segmentation, etc. changed the ordering and alignment observed. With that knowledge, we hope to be able to form new and interesting structures. We began our studies by examining the assembly of single component nanowires. Chapter 2 describes this work, in which solid Au nanowires measuring 2-7 mum in length and 290 nm in diameter self-assembled into smectic rows. By both experiment and theory, we determined that these rows formed due to a balance of electrostatic repulsions and van der Waals attractions. Final assemblies were stable for at least several days. Monte Carlo methods were used to simulate assemblies and showed structures that mirrored those experimentally observed. Simulations indicated that the smectic phase was preferred over others, i.e., nematic, when an additional small charge was added to the ends of the nanowires. Our particles have rough tips, which might create these additional electrostatic repulsions. To increase the particle and array complexity, two-component, metallic nanowire assembly was explored in Chapter 3. We examined numerous types of nanowires by changing the segment length, ratio, and material, the nanowire length, the surface coating, and the presence of small third segments. These segmented nanowires were generally Au-Ag and also ordered into smectic rows. Segmented wires arranged in rows, however, can be aligned in two possible ways with respect to a neighboring particle. The Au segments on neighboring particles can be oriented in the same direction or opposed to each other. Orientation was quantified in terms of an order parameter that took into account

  3. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices.

    PubMed

    Sarwar, A T M Golam; Carnevale, Santino D; Yang, Fan; Kent, Thomas F; Jamison, John J; McComb, David W; Myers, Roberto C

    2015-10-28

    Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, nanowire LEDs directly grown and electrically integrated on metal are demonstrated. Optical and structural measurements reveal high-quality, vertically aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets. PMID:26307552

  4. Growth Mechanism of Nanowires: Ternary Chalcogenides

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  5. Preparation and characterization of electrodeposited cobalt nanowires

    SciTech Connect

    Irshad, M. I. Mohamed, N. M.; Ahmad, F. Abdullah, M. Z.

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  6. Laser patterning of transparent conductive metal nanowire coatings: simulation and experiment.

    PubMed

    Henley, Simon J; Cann, Maria; Jurewicz, Izabela; Dalton, Alan; Milne, David

    2014-01-21

    Transparent and electrically conductive metal nanowire networks are possible replacements for costly indium tin oxide (ITO) films in many optoelectronic devices. ITO films are regularly patterned using pulsed lasers so similar technologies could be used for nanowire coatings to define electrode structures. Here, the effects of laser irradiation on conducting silver nanowire coatings are simulated and then investigated experimentally for networks formed by spray deposition onto transparent substrates. The ablation threshold fluence is found experimentally for such nanowire networks and is then related to film thickness. An effective model using finite-element heat transfer analysis is examined to look at energy dissipation through these nanowire networks and used to understand mechanisms at play in the laser-material interactions. It is demonstrated that the three-dimensional nature of these coatings and the relative ratios of the rates of lateral to vertical heat diffusion are important controlling parameter affecting the ablation threshold. PMID:24287486

  7. Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

    SciTech Connect

    Bowland, Christopher C.; Zhou, Zhi; Malakooti, Mohammad H.; Sodano, Henry A.

    2015-06-01

    We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

  8. Nanowire dye-sensitized solar cells.

    PubMed

    Law, Matt; Greene, Lori E; Johnson, Justin C; Saykally, Richard; Yang, Peidong

    2005-06-01

    Excitonic solar cells-including organic, hybrid organic-inorganic and dye-sensitized cells (DSCs)-are promising devices for inexpensive, large-scale solar energy conversion. The DSC is currently the most efficient and stable excitonic photocell. Central to this device is a thick nanoparticle film that provides a large surface area for the adsorption of light-harvesting molecules. However, nanoparticle DSCs rely on trap-limited diffusion for electron transport, a slow mechanism that can limit device efficiency, especially at longer wavelengths. Here we introduce a version of the dye-sensitized cell in which the traditional nanoparticle film is replaced by a dense array of oriented, crystalline ZnO nanowires. The nanowire anode is synthesized by mild aqueous chemistry and features a surface area up to one-fifth as large as a nanoparticle cell. The direct electrical pathways provided by the nanowires ensure the rapid collection of carriers generated throughout the device, and a full Sun efficiency of 1.5% is demonstrated, limited primarily by the surface area of the nanowire array. PMID:15895100

  9. Multicolored Vertical Silicon Nanowires

    SciTech Connect

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  10. From nanodiamond to nanowires.

    SciTech Connect

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  11. Nanowire-Based Electrode for Acute In Vivo Neural Recordings in the Brain

    PubMed Central

    Suyatin, Dmitry B.; Wallman, Lars; Thelin, Jonas; Prinz, Christelle N.; Jörntell, Henrik; Samuelson, Lars; Montelius, Lars; Schouenborg, Jens

    2013-01-01

    We present an electrode, based on structurally controlled nanowires, as a first step towards developing a useful nanostructured device for neurophysiological measurements in vivo. The sensing part of the electrode is made of a metal film deposited on top of an array of epitaxially grown gallium phosphide nanowires. We achieved the first functional testing of the nanowire-based electrode by performing acute in vivo recordings in the rat cerebral cortex and withstanding multiple brain implantations. Due to the controllable geometry of the nanowires, this type of electrode can be used as a model system for further analysis of the functional properties of nanostructured neuronal interfaces in vivo. PMID:23431387

  12. Bi nanowire-based thermal biosensor for the detection of salivary cortisol using the Thomson effect

    NASA Astrophysics Data System (ADS)

    Lee, Seunghyun; Hyun Lee, Jung; Kim, MinGin; Kim, Jeongmin; Song, Min-Jung; Jung, Hyo-Il; Lee, Wooyoung

    2013-09-01

    We present a study of a thermal biosensor based on bismuth nanowire that is fabricated for the detection of the human stress hormone cortisol using the Thomson effect. The Bi nanowire was grown using the On-Film Formation of Nanowires (OFF-ON) method. The thermal device was fabricated using photolithography, and the sensing area was modified with immobilized anti-cortisol antibodies conjugated with protein G for the detection of cortisol. The voltages were measured with two probe tips during surface modification to investigate the biochemical reactions in the fabricated thermal biosensor. The Bi nanowire-based thermal biosensor exhibited low detection limit and good selectivity for the detection of cortisol.

  13. Structural characterization of nanowires and nanowire arrays

    NASA Astrophysics Data System (ADS)

    Becker, Catherine Rose

    Nanowires, which have diameter less than a few hundred nanometers and high aspect ratios, may have the same properties as their corresponding bulk materials, or may exhibit unique properties due to their confined dimensions and increased surface to volume ratios. They are a popular field of technological investigation in applications that depend on the transport of charge carriers, because of expectations that microcircuit miniaturization will lead to the next boom in the electronics industry. In this work, the high spatial resolution afforded by transmission electron microscopy (TEM) is used to study nanowires formed by electrochemical deposition into porous alumina templates. The goal is to determine the effect of the synthesis and subsequent processing on the microstructure and crystallinity of the wires. A thorough understanding of the microstructural features of a material is vital for optimizing its performance in a desired application. Two material systems were studied in this work. The first is bismuth telluride (Bi 2Te3), which is used in thermoelectric applications. The second is metallic copper, the electrochemical deposition of which is of interest for interconnects in semiconductor devices. The first part of this work utilized TEM to obtain a thorough characterization of the microstructural features of individual Bi2Te3 nanowires following release from the templates. As deposited, the nanowires are fine grained and exhibit significant lattice strain. Annealing increases the grain size and dislocations are created to accommodate the lattice strain. The degree of these microstructural changes depends on the thermal treatment. However, no differences were seen in the nanowire microstructure as a function of the synthetic parameters. The second part of this work utilized a modified dark field TEM technique in order to obtain a spatially resolved, semi-quantitative understanding of the evolution of preferred orientation as a function of the electrochemical

  14. Electroluminescence from silicon nanowires

    NASA Astrophysics Data System (ADS)

    Huo, J.; Solanki, R.; Freeouf, J. L.; Carruthers, J. R.

    2004-12-01

    Room temperature electroluminescence has been demonstrated from undoped silicon nanowires that were grown from disilane. Ensembles of nanowires were excited by capacitively coupling them to an ac electric field. The emission peak occurred at about 600 nm from wires of average diameter of about 4 nm. The emission appears to result from band-to-band electron-hole recombination.

  15. Nanowires for energy generation.

    PubMed

    Hiralal, Pritesh; Unalan, Husnu Emrah; Amaratunga, Gehan A J

    2012-05-17

    As a result of their morphology, nanowires bring new properties and the promise of performance for a range of electronic devices. This review looks into the properties of nanowires and the multiple ways in which they have been exploited for energy generation, from photovoltaics to piezoelectric generators. PMID:22538769

  16. Metallic nanowire networks

    DOEpatents

    Song, Yujiang; Shelnutt, John A.

    2012-11-06

    A metallic nanowire network synthesized using chemical reduction of a metal ion source by a reducing agent in the presence of a soft template comprising a tubular inverse micellar network. The network of interconnected polycrystalline nanowires has a very high surface-area/volume ratio, which makes it highly suitable for use in catalytic applications.

  17. Nanowire Photovoltaic Devices

    NASA Technical Reports Server (NTRS)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  18. Site-specific growth of ZnO nanowires from patterned Zn via compatible semiconductor processing

    NASA Astrophysics Data System (ADS)

    Law, J. B. K.; Boothroyd, C. B.; Thong, J. T. L.

    2008-05-01

    An alternative method for site-selective growth of ZnO nanowires without the use of an Au catalyst or a ZnO thin-film seed layer is presented. Using conventional lithography and metallization semiconductor processing steps, regions for selective nanowire growth are defined using Zn, which acts as a self-catalyst for subsequent ZnO nanowire growth via a simple thermal oxidation process. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction reveal that the nanowires grown by this technique are single-crystalline wurtzite ZnO. Room temperature photoluminescence exhibits strong ultraviolet emission from these nanowires, indicating good optical properties. A series of experiments was conducted to elucidate the unique growth behavior of these nanowires directly from the Zn grains and a growth model is proposed.

  19. Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

    SciTech Connect

    Bouravleuv, Alexei; Cirlin, George; Sapega, Victor; Werner, Peter; Savin, Alexander; Lipsanen, Harri

    2013-04-14

    (Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 Degree-Sign C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 {mu}m and diameters 50-90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.

  20. Hydrogen gas sensing with networks of ultra-small palladium nanowires formed on filtration membranes.

    SciTech Connect

    Zeng, X. Q.; Latimer, M. L.; Xiao, Z. L.; Panuganti, S.; Welp, U.; Kwok, W. K.; Xu, T.

    2010-11-29

    Hydrogen sensors based on single Pd nanowires show promising results in speed, sensitivity, and ultralow power consumption. The utilization of single Pd nanowires, however, face challenges in nanofabrication, manipulation, and achieving ultrasmall transverse dimensions. We report on hydrogen sensors that take advantage of single palladium nanowires in high speed and sensitivity and that can be fabricated conveniently. The sensors are based on networks of ultrasmall (<10 nm) palladium nanowires deposited onto commercially available filtration membranes. We investigated the sensitivities and response times of these sensors as a function of the thickness of the nanowires and also compared them with a continuous reference film. The superior performance of the ultrasmall Pd nanowire network based sensors demonstrates the novelty of our fabrication approach, which can be directly applied to palladium alloy and other hydrogen sensing materials.

  1. Fabrication of nanowire network AAO and its application in SERS

    PubMed Central

    2013-01-01

    In this paper, nanowire network anodized aluminum oxide (AAO) was fabricated by just adding a simple film-eroding process after the production of porous AAO. After depositing 50 nm of Au onto the surface, nanowire network AAO can be used as ultrasensitive and high reproducibility surface-enhanced Raman scattering (SERS) substrate. The average Raman enhancement factor of the nanowire network AAO SERS substrate can reach 5.93 × 106, which is about 14% larger than that of commercial Klarite® substrates. Simultaneously, the relative standard deviations in the SERS intensities are limited to approximately 7%. All of the results indicate that our large-area low-cost high-performance nanowire structure AAO SERS substrates have a great advantage in chemical/biological sensing applications. PMID:24261342

  2. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  3. Single nanowire photovoltaics.

    PubMed

    Tian, Bozhi; Kempa, Thomas J; Lieber, Charles M

    2009-01-01

    This tutorial review focuses on recent work addressing the properties and potential of semiconductor nanowires as building blocks for photovoltaic devices based on investigations at the single nanowire level. Two central nanowire motifs involving p-i-n dopant modulation in axial and coaxial geometries serve as platforms for fundamental studies. Research illustrating the synthesis of these structural motifs will be reviewed first, followed by an examination of recent studies of single axial and coaxial p-i-n silicon nanowire solar cells. Finally, challenges and opportunities for improving efficiency enabled by controlled synthesis of more complex nanowire structures will be discussed, as will their potential applications as power sources for emerging nanoelectronic devices. PMID:19088961

  4. Routing of surface plasmons in silver nanowire networks controlled by polarization and coating.

    PubMed

    Wei, Hong; Pan, Deng; Xu, Hongxing

    2015-12-01

    Controllable propagation of electromagnetic energy in plasmonic nanowaveguides is of great importance for building nanophotonic circuits. Here, we studied the routing of surface plasmons in silver nanowire structures by combining experiments and electromagnetic simulations. The superposition of different plasmon modes results in the tunable near field patterns of surface plasmons on the nanowire. Using the quantum dot fluorescence imaging technique, we experimentally demonstrate that the near field distribution on the nanowire controls the surface plasmon transmission in the nanowire networks. By controlling the polarization of the input light or by controlling the dielectric coating on the nanowire to modulate the plasmon field distribution and guarantee the strong local field intensity at the connecting junction, the surface plasmons can be efficiently routed to the connected nanowires. Depositing a thin layer of Al2O3 film onto the nanowires can reverse the polarization dependence of the output intensity at the nanowire terminals. These results are instructive for designing functional plasmonic nanowire networks and metal-nanowire-based nanophotonic devices. PMID:26514593

  5. Electrodeposition of platinum-iridium alloy nanowires for hermetic packaging of microelectronics.

    PubMed

    Petrossians, Artin; Whalen, John J; Weiland, James D; Mansfeld, Florian

    2012-01-01

    An electrodeposition technique was applied for fabrication of dense platinum-iridium alloy nanowires as interconnect structures in hermetic microelectronic packaging to be used in implantable devices. Vertically aligned arrays of platinum-iridium alloy nanowires with controllable length and a diameter of about 200 nm were fabricated using a cyclic potential technique from a novel electrodeposition bath in nanoporous aluminum oxide templates. Ti/Au thin films were sputter deposited on one side of the alumina membranes to form a base material for electrodeposition. Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) were used to characterize the morphology and the chemical composition of the nanowires, respectively. SEM micrographs revealed that the electrodeposited nanowires have dense and compact structures. EDS analysis showed a 60:40% platinum-iridium nanowire composition. Deposition rates were estimated by determining nanowire length as a function of deposition time. High Resolution Transmission Electron Microscopy (HRTEM) images revealed that the nanowires have a nanocrystalline structure with grain sizes ranging from 3 nm to 5 nm. Helium leak tests performed using a helium leak detector showed leak rates as low as 1 × 10(-11) mbar L s(-1) indicating that dense nanowires were electrodeposited inside the nanoporous membranes. Comparison of electrical measurements on platinum and platinum-iridium nanowires revealed that platinum-iridium nanowires have improved electrical conductivity. PMID:23365995

  6. Routing of surface plasmons in silver nanowire networks controlled by polarization and coating

    NASA Astrophysics Data System (ADS)

    Wei, Hong; Pan, Deng; Xu, Hongxing

    2015-11-01

    Controllable propagation of electromagnetic energy in plasmonic nanowaveguides is of great importance for building nanophotonic circuits. Here, we studied the routing of surface plasmons in silver nanowire structures by combining experiments and electromagnetic simulations. The superposition of different plasmon modes results in the tunable near field patterns of surface plasmons on the nanowire. Using the quantum dot fluorescence imaging technique, we experimentally demonstrate that the near field distribution on the nanowire controls the surface plasmon transmission in the nanowire networks. By controlling the polarization of the input light or by controlling the dielectric coating on the nanowire to modulate the plasmon field distribution and guarantee the strong local field intensity at the connecting junction, the surface plasmons can be efficiently routed to the connected nanowires. Depositing a thin layer of Al2O3 film onto the nanowires can reverse the polarization dependence of the output intensity at the nanowire terminals. These results are instructive for designing functional plasmonic nanowire networks and metal-nanowire-based nanophotonic devices.

  7. Pb nanowire formation on Al/lead zirconate titanate surfaces in high-pressure hydrogen

    SciTech Connect

    Alvine, Kyle J.; Shutthanandan, V.; Arey, Bruce W.; Wang, Chong M.; Bennett, Wendy D.; Pitman, Stan G.

    2012-07-12

    Thin films of Al on lead zirconate titanate (PZT) annealed in high-pressure hydrogen at 100C exhibit surface Pb nanowire growth. Wire diameter is approximately 80 nm and length can exceed 100 microns. Based on microstructural analysis using electron microscopy and ion scattering, a vapor-solid scheme with hydrogen as a carrier gas was proposed as a growth mechanism. We expect that these observations may lead to controlled Pb nanowires growth through pattering of the Al film.

  8. Control of the micrometric scale morphology of silicon nanowires through ion irradiation-induced metal dewetting

    NASA Astrophysics Data System (ADS)

    Lo Savio, R.; Repetto, L.; Guida, P.; Angeli, E.; Firpo, G.; Volpe, A.; Ierardi, V.; Valbusa, U.

    2016-08-01

    We propose ion-induced dewetting of Au thin films as a mechanism to modify and control the morphology of Si nanowires formed through metal-assisted chemical etching. We show that the patterns formed upon irradiation resemble those typical of dewetting phenomena, with a characteristic length in the nanometer range. Irradiated Au films are then used as a template for the fabrication of Si nanowires, and we show that a long-range order exists also in etched substrates, although at much longer length scales in the micrometer range. Investigation of the optical properties reveals that the Si nanowires emit broadband photoluminescence peaked at 700 nm. The proposed synthesis method allows tuning the morphological features of the nanowire bundles at the nanoscale without affecting the optical properties. This approach can be exploited for the engineering of nanowires-based devices where the morphological features become important.

  9. A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor

    NASA Astrophysics Data System (ADS)

    Asres, Georgies Alene; Dombovari, Aron; Sipola, Teemu; Puskás, Robert; Kukovecz, Akos; Kónya, Zoltán; Popov, Alexey; Lin, Jhih-Fong; Lorite, Gabriela S.; Mohl, Melinda; Toth, Geza; Lloyd Spetz, Anita; Kordas, Krisztian

    2016-05-01

    In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range.

  10. A novel WS2 nanowire-nanoflake hybrid material synthesized from WO3 nanowires in sulfur vapor

    PubMed Central

    Asres, Georgies Alene; Dombovari, Aron; Sipola, Teemu; Puskás, Robert; Kukovecz, Akos; Kónya, Zoltán; Popov, Alexey; Lin, Jhih-Fong; Lorite, Gabriela S.; Mohl, Melinda; Toth, Geza; Lloyd Spetz, Anita; Kordas, Krisztian

    2016-01-01

    In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range. PMID:27180902