Cole-cole analysis and electrical conduction mechanism of N{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak; Shekhawat, Nidhi; Aggarwal, Sanjeev, E-mail: write2sa@gmail.com

2014-05-14

In this paper, we present the analysis of the dielectric (dielectric constant, dielectric loss, a.c. conductivity) and electrical properties (I–V characteristics) of pristine and nitrogen ion implanted polycarbonate. The samples of polycarbonate were implanted with 100 keV N{sup +} ions with fluence ranging from 1 × 10{sup 15} to 1 × 10{sup 17} ions cm{sup −2}. The dielectric measurements of these samples were performed in the frequency range of 100 kHz to 100 MHz. It has been observed that dielectric constant decreases whereas dielectric loss and a.c. conductivity increases with increasing ion fluence. An analysis of real and imaginary parts of dielectric permittivity has beenmore » elucidated using Cole-Cole plot of the complex permittivity. With the help of Cole-Cole plot, we determined the values of static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}), and molecular relaxation time (τ). The I–V characteristics were studied using Keithley (6517) electrometer. The electrical conduction behaviour of pristine and implanted polycarbonate specimens has been explained using various models of conduction.« less

AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

NASA Astrophysics Data System (ADS)

Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

2017-11-01

Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

P-type transparent conducting oxides.

PubMed

Zhang, Kelvin H L; Xi, Kai; Blamire, Mark G; Egdell, Russell G

2016-09-28

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating

NASA Astrophysics Data System (ADS)

Jin, Kui; Hu, Wei; Zhu, Beiyi; Kim, Dohun; Yuan, Jie; Sun, Yujie; Xiang, Tao; Fuhrer, Michael S.; Takeuchi, Ichiro; Greene, Richard. L.

2016-05-01

The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.

Electrically conductive material

DOEpatents

Singh, Jitendra P.; Bosak, Andrea L.; McPheeters, Charles C.; Dees, Dennis W.

1993-01-01

An electrically conductive material for use in solid oxide fuel cells, electrochemical sensors for combustion exhaust, and various other applications possesses increased fracture toughness over available materials, while affording the same electrical conductivity. One embodiment of the sintered electrically conductive material consists essentially of cubic ZrO.sub.2 as a matrix and 6-19 wt. % monoclinic ZrO.sub.2 formed from particles having an average size equal to or greater than about 0.23 microns. Another embodiment of the electrically conductive material consists essentially at cubic ZrO.sub.2 as a matrix and 10-30 wt. % partially stabilized zirconia (PSZ) formed from particles having an average size of approximately 3 microns.

Electrically conductive material

DOEpatents

Singh, J.P.; Bosak, A.L.; McPheeters, C.C.; Dees, D.W.

1993-09-07

An electrically conductive material is described for use in solid oxide fuel cells, electrochemical sensors for combustion exhaust, and various other applications possesses increased fracture toughness over available materials, while affording the same electrical conductivity. One embodiment of the sintered electrically conductive material consists essentially of cubic ZrO[sub 2] as a matrix and 6-19 wt. % monoclinic ZrO[sub 2] formed from particles having an average size equal to or greater than about 0.23 microns. Another embodiment of the electrically conductive material consists essentially at cubic ZrO[sub 2] as a matrix and 10-30 wt. % partially stabilized zirconia (PSZ) formed from particles having an average size of approximately 3 microns. 8 figures.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

Innovative methodology for electrical conductivity measurements and metal partition in biosolid pellets

NASA Astrophysics Data System (ADS)

Jordan, Manuel Miguel; Rincón-Mora, Beatriz; Belén Almendro-Candel, María; Navarro-Pedreño, José; Gómez-Lucas, Ignacio; Bech, Jaume

2017-04-01

the H2. This experiment could be useful for establishing a general rule for taking measurements of electrical conductivity and heavy metals in biosolid pellets and other types of dry wastes. References Camilla S, Jordán MM (2009) Electrical conductivity measurements in sewage sludge pellets: innovative techniques for environmental management. J Hazard Mater 168:1260-1263 Jordán, MM, Rincón-Mora, B; Almendro, MB (2015). Heavy metal distribution and electrical conductivity measurements in biosolid pellets. J, Soils and Sediments, 16 1176-118

Effect of Surfactant Type and Sonication Energy on the Electrical Conductivity Properties of Nanocellulose-CNT Nanocomposite Films.

PubMed

Siljander, Sanna; Keinänen, Pasi; Räty, Anna; Ramakrishnan, Karthik Ram; Tuukkanen, Sampo; Kunnari, Vesa; Harlin, Ali; Vuorinen, Jyrki; Kanerva, Mikko

2018-06-20

We present a detailed study on the influence of sonication energy and surfactant type on the electrical conductivity of nanocellulose-carbon nanotube (NFC-CNT) nanocomposite films. The study was made using a minimum amount of processing steps, chemicals and materials, to optimize the conductivity properties of free-standing flexible nanocomposite films. In general, the NFC-CNT film preparation process is sensitive concerning the dispersing phase of CNTs into a solution with NFC. In our study, we used sonication to carry out the dispersing phase of processing in the presence of surfactant. In the final phase, the films were prepared from the dispersion using centrifugal cast molding. The solid films were analyzed regarding their electrical conductivity using a four-probe measuring technique. We also characterized how conductivity properties were enhanced when surfactant was removed from nanocomposite films; to our knowledge this has not been reported previously. The results of our study indicated that the optimization of the surfactant type clearly affected the formation of freestanding films. The effect of sonication energy was significant in terms of conductivity. Using a relatively low 16 wt. % concentration of multiwall carbon nanotubes we achieved the highest conductivity value of 8.4 S/cm for nanocellulose-CNT films ever published in the current literature. This was achieved by optimizing the surfactant type and sonication energy per dry mass. Additionally, to further increase the conductivity, we defined a preparation step to remove the used surfactant from the final nanocomposite structure.

N-type Ca2+ channels mediate transmitter release at the electromotoneuron-electrocyte synapses of the weakly electric fish Gymnotus carapo.

PubMed

Sierra, F; Lorenzo, D; Macadar, O; Buño, W

1995-06-19

The effects of omega-conotoxin-GVIA (omega-CgTX) on synaptic transmission were studied in the electromotoneuron-electrocyte synapses of the electric organ (EO) of the weakly electric fish Gymnotus carapo. omega-CgTX selectively and irreversibly blocked excitatory postsynaptic potentials (EPSPs) in a dose dependent-manner. The toxin had no effect on: (a) resting postsynaptic membrane potential and conductance; (b) postsynaptic action potentials elicited by depolarizing transmembrane current pulses; (c) the action potential conduction in the presynaptic fiber; (d) acetylcholine (ACh)-induced postsynaptic responses. Nifedipine - a selective dihydropyridine antagonist of the L-type voltage-dependent Ca2+ channels (VDCCs) - did not affect synaptic transmission. Transmission was also undisturbed by the peptide omega-Agatoxin (omega-Aga-IVA), the low molecular weight polyamine, funnel-web toxin (FTX) - both included in the venom of the spider Agelenopsis aperta - and its synthetic analog sFTX, all selective blockers of P-type VDCCs. Since omega-CgTX irreversibly blocks the N-type VDCCs, we conclude that presynaptic N-type VDCCs mediate transmitter release at electromotoneuron terminals. The VDCCs involved in fish peripheral electromotoneuron-electrocyte presynaptic transmitter release are therefore similar to those in amphibian, reptilian and avian peripheral synapses, but differ from mammalian and invertebrate motoneuron terminals.

Electrically conductive cellulose composite

DOEpatents

Evans, Barbara R.; O'Neill, Hugh M.; Woodward, Jonathan

2010-05-04

An electrically conductive cellulose composite includes a cellulose matrix and an electrically conductive carbonaceous material incorporated into the cellulose matrix. The electrical conductivity of the cellulose composite is at least 10 .mu.S/cm at 25.degree. C. The composite can be made by incorporating the electrically conductive carbonaceous material into a culture medium with a cellulose-producing organism, such as Gluconoacetobacter hansenii. The composites can be used to form electrodes, such as for use in membrane electrode assemblies for fuel cells.

Variable Anisotropic Brain Electrical Conductivities in Epileptogenic Foci

PubMed Central

Mandelkern, M.; Bui, D.; Salamon, N.; Vinters, H. V.; Mathern, G. W.

2010-01-01

Source localization models assume brain electrical conductivities are isotropic at about 0.33 S/m. These assumptions have not been confirmed ex vivo in humans. This study determined bidirectional electrical conductivities from pediatric epilepsy surgery patients. Electrical conductivities perpendicular and parallel to the pial surface of neocortex and subcortical white matter (n = 15) were measured using the 4-electrode technique and compared with clinical variables. Mean (±SD) electrical conductivities were 0.10 ± 0.01 S/m, and varied by 243% from patient to patient. Perpendicular and parallel conductivities differed by 45%, and the larger values were perpendicular to the pial surface in 47% and parallel in 40% of patients. A perpendicular principal axis was associated with normal, while isotropy and parallel principal axes were linked with epileptogenic lesions by MRI. Electrical conductivities were decreased in patients with cortical dysplasia compared with non-dysplasia etiologies. The electrical conductivity values of freshly excised human brain tissues were approximately 30% of assumed values, varied by over 200% from patient to patient, and had erratic anisotropic and isotropic shapes if the MRI showed a lesion. Understanding brain electrical conductivity and ways to non-invasively measure them are probably necessary to enhance the ability to localize EEG sources from epilepsy surgery patients. PMID:20440549

Electrical conductivity modeling in fractal non-saturated porous media

NASA Astrophysics Data System (ADS)

Wei, W.; Cai, J.; Hu, X.; Han, Q.

2016-12-01

The variety of electrical conductivity in non-saturated conditions is important to study electric conduction in natural sedimentary rocks. The electrical conductivity in completely saturated porous media is a porosity-function representing the complex connected behavior of single conducting phases (pore fluid). For partially saturated conditions, the electrical conductivity becomes even more complicated since the connectedness of pore. Archie's second law is an empirical electrical conductivity-porosity and -saturation model that has been used to predict the formation factor of non-saturated porous rock. However, the physical interpretation of its parameters, e.g., the cementation exponent m and the saturation exponent n, remains questionable. On basis of our previous work, we combine the pore-solid fractal (PSF) model to build an electrical conductivity model in non-saturated porous media. Our theoretical porosity- and saturation-dependent models contain endmember properties, such as fluid electrical conductivities, pore fractal dimension and tortuosity fractal dimension (representing the complex degree of electrical flowing path). We find the presented model with non-saturation-dependent electrical conductivity datasets indicate excellent match between theory and experiments. This means the value of pore fractal dimension and tortuosity fractal dimension change from medium to medium and depends not only on geometrical properties of pore structure but also characteristics of electrical current flowing in the non-saturated porous media.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Current conduction mechanism and electrical break-down in InN grown on GaN

NASA Astrophysics Data System (ADS)

Kuzmik, J.; Fleury, C.; Adikimenakis, A.; Gregušová, D.; Ťapajna, M.; Dobročka, E.; Haščík, Š.; Kučera, M.; Kúdela, R.; Androulidaki, M.; Pogany, D.; Georgakilas, A.

2017-06-01

Current conduction mechanism, including electron mobility, electron drift velocity (vd) and electrical break-down have been investigated in a 0.5 μm-thick (0001) InN layer grown by molecular-beam epitaxy on a GaN/sapphire template. Electron mobility (μ) of 1040 cm2/Vs and a free electron concentration (n) of 2.1 × 1018 cm-3 were measured at room temperature with only a limited change down to 20 K, suggesting scattering on dislocations and ionized impurities. Photoluminescence spectra and high-resolution X-ray diffraction correlated with the Hall experiment showing an emission peak at 0.69 eV, a full-width half-maximum of 30 meV, and a dislocation density Ndis ˜ 5.6 × 1010 cm-2. Current-voltage (I-V) characterization was done in a pulsed (10 ns-width) mode on InN resistors prepared by plasma processing and Ohmic contacts evaporation. Resistors with a different channel length ranging from 4 to 15.8 μm obeyed the Ohm law up to an electric field intensity Eknee ˜ 22 kV/cm, when vd ≥ 2.5 × 105 m/s. For higher E, I-V curves were nonlinear and evolved with time. Light emission with a photon energy > 0.7 eV has been observed already at modest Erad of ˜ 8.3 kV/cm and consequently, a trap-assisted interband tunneling was suggested to play a role. At Eknee ˜ 22 kV/cm, we assumed electron emission from traps, with a positive feed-back for the current enhancement. Catastrophic break-down appeared at E ˜ 25 kV/cm. Reduction of Ndis was suggested to fully exploit InN unique prospects for future high-frequency devices.

Electrically conductive proppant and methods for detecting, locating and characterizing the electrically conductive proppant

DOEpatents

Cannan, Chad; Bartel, Lewis; Palisch, Terrence; Aldridge, David

2015-01-13

Electrically conductive proppants and methods for detecting, locating, and characterizing same are provided. The electrically conductive proppant can include a substantially uniform coating of an electrically conductive material having a thickness of at least 500 nm. The method can include injecting a hydraulic fluid into a wellbore extending into a subterranean formation at a rate and pressure sufficient to open a fracture therein, injecting into the fracture a fluid containing the electrically conductive proppant, electrically energizing the earth at or near the fracture, and measuring three dimensional (x, y, and z) components of electric and magnetic field responses at a surface of the earth or in an adjacent wellbore.

Electrical conductivity of rocks at high pressures and temperatures

NASA Technical Reports Server (NTRS)

Parkhomenko, E. I.; Bondarenko, A. T.

1986-01-01

The results of studies of the electrical conductivity in the most widely distributed types of igneous rocks, at temperatures of up to 1200 C, at atmospheric pressure, and also at temperatures of up to 700 C and at pressures of up to 20,000 kg/sq cm are described. The figures of electrical conductivity, of activaation energy and of the preexponential coefficient are presented and the dependence of these parameters on the petrochemical parameters of the rocks are reviewed. The possible electrical conductivities for the depository, granite and basalt layers of the Earth's crust and of the upper mantle are presented, as well as the electrical conductivity distribution to the depth of 200 to 240 km for different geological structures.

The electrical losses induced by silver paste in n-type silicon solar cells

NASA Astrophysics Data System (ADS)

Aoyama, Takayuki; Aoki, Mari; Sumita, Isao; Yoshino, Yasushi; Ohshita, Yoshio; Ogura, Atsushi

2017-10-01

Aluminum-added silver paste (Ag/Al paste) has been used for p+ emitter of n-type solar cells. The electrical losses due to shunting and recombination caused by the paste in the cells have been reported to originate from huge metallic spikes due to the aluminum. However, whether the aluminum actually induces the losses has not been clarified yet. In this study, the “floating contact method” is applied to aluminum-free silver (Al-free Ag) paste to investigate the effects of aluminum extraction from the Ag/Al paste and to understand how the aluminum principally induces the losses for the p+ emitter. Furthermore, the interfacial morphology between the Al-free Ag paste and p-type silicon is investigated. The Ag paste itself creates tiny crystallites for the p+ emitter, resulting in shunting and recombination. The result indicates that the aluminum addition to Ag paste is not the main reason for the electrical losses in the n-type solar cells.

Electronic conduction in La-based perovskite-type oxides

PubMed Central

Ohbayashi, Kazushige; Koumoto, Kunihito

2015-01-01

A systematic study of La-based perovskite-type oxides from the viewpoint of their electronic conduction properties was performed. LaCo0.5Ni0.5O3±δ was found to be a promising candidate as a replacement for standard metals used in oxide electrodes and wiring that are operated at temperatures up to 1173 K in air because of its high electrical conductivity and stability at high temperatures. LaCo0.5Ni0.5O3±δ exhibits a high conductivity of 1.9 × 103 S cm−1 at room temperature (R.T.) because of a high carrier concentration n of 2.2 × 1022 cm−3 and a small effective mass m∗ of 0.10 me. Notably, LaCo0.5Ni0.5O3±δ exhibits this high electrical conductivity from R.T. to 1173 K, and little change in the oxygen content occurs under these conditions. LaCo0.5Ni0.5O3±δ is the most suitable for the fabrication of oxide electrodes and wiring, though La1−xSrxCoO3±δ and La1−xSrxMnO3±δ also exhibit high electronic conductivity at R.T., with maximum electrical conductivities of 4.4 × 103 S cm−1 for La0.5Sr0.5CoO3±δ and 1.5 × 103 S cm−1 for La0.6Sr0.4MnO3±δ because oxygen release occurs in La1−xSrxCoO3±δ as elevating temperature and the electrical conductivity of La0.6Sr0.4MnO3±δ slightly decreases at temperatures above 400 K. PMID:27877778

Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

PubMed Central

Yamasaka, Shuto; Watanabe, Kentaro; Sakane, Shunya; Takeuchi, Shotaro; Sakai, Akira; Sawano, Kentarou; Nakamura, Yoshiaki

2016-01-01

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~1012 cm−2). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electrical conduction channels, respectively. Electron conductivity in n-type nanoacrhitecture shows high values comparable to those of epitaxial Si films despite the existence of epitaxial NDs. This is because Ge NDs mainly scattered not electrons but phonons selectively, which could be attributed to the small conduction band offset at the epitaxially-grown Si/Ge interface and high transmission probability through stacking faults. These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control. PMID:26973092

Effect of pH on the electrical properties and conducting mechanism of SnO2 nanoparticles

NASA Astrophysics Data System (ADS)

Periathai, R. Sudha; Abarna, S.; Hirankumar, G.; Jeyakumaran, N.; Prithivikumaran, N.

2017-03-01

Semiconductor nanoparticles have attracted more interests because of their size-dependent optical and electrical properties.SnO2 is an oxygen-deficient n-type semiconductor with a wide band gap of 3.6 eV (300 K). It has many remarkable applications as sensors, catalysts, transparent conducting electrodes, anode material for rechargeable Li- ion batteries and optoelectronic devices. In the present work, the role of pH in determining the electrical and dielectric properties of SnO2 nanoparticles has been studied as a function of temperature ranging from Room temperature (RT) to 114 °C in the frequency range of 7 MHz to 50 mHz using impedance spectroscopic technique. The non linear behavior observed in the thermal dependence of the conductance of SnO2 nanoparticles is explained by means of the surface property of SnO2 nanoparticles where proton hopping mechanism is dealt with. Jonscher's power law has been fitted for the conductance spectra and the frequency exponent ("s" value) gives an insight about the ac conducting mechanism. The temperature dependence of electrical relaxation phenomenon in the material has been observed. The complex electric modulus analysis indicates the possibility of hopping conduction mechanism in the system with non-exponential type of conductivity relaxation.

Oxygen vacancies: The origin of n -type conductivity in ZnO

NASA Astrophysics Data System (ADS)

Liu, Lishu; Mei, Zengxia; Tang, Aihua; Azarov, Alexander; Kuznetsov, Andrej; Xue, Qi-Kun; Du, Xiaolong

2016-06-01

Oxygen vacancy (VO) is a common native point defect that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n -type conductivity in ZnO has been still unsettled in the past 50 years. Here, we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n -type conductivity as well as the nonstoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

2018-02-01

Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

Electrically Conductive and Protective Coating for Planar SOFC Stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jung-Pyung; Stevenson, Jeffry W.

Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, preventmore » Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be« less

N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

DOEpatents

Gruen, Dieter M [Downers Grove, IL; Krauss, Alan R [late of Naperville, IL; Auciello, Orlando H [Bolingbrook, IL; Carlisle, John A [Plainfield, IL

2004-09-21

An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10.sup.19 atoms/cm.sup.3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

Transformation from insulating p-type to semiconducting n-type conduction in CaCu3Ti4O12-related Na(Cu5/2Ti1/2)Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Li, Ming; Sinclair, Derek C.

2013-07-01

A double doping mechanism of Na+ + 1/2 Ti4+ → Ca2+ + 1/2 Cu2+ on the general formula Ca1-xNax(Cu3-x/2Tix/2)Ti4O12 has been used to prepare a series of isostructural CaCu3Ti4O12 (CCTO)-type perovskites. A complete solid solution exists for 0 ≤ x ≤ 1 and all compositions exhibit incipient ferroelectric behaviour with higher than expected intrinsic relative permittivity. Although CCTO ceramics typically exhibit n-type semiconductivity (room temperature, RT, resistivity of ˜10-100 Ω cm), Na(Cu5/2Ti1/2)Ti4O12 (NCTO) ceramics sintered at 950 °C consist of two insulating bulk phases (RT resistivity > 1 GΩ cm), one p-type and the other n-type. With increasing sintering temperature/period, the p-type phase transforms into the n-type phase. During the transformation, the resistivity and activation energy for electrical conduction (Ea ˜ 1.0 eV) of the p-type phase remain unchanged, whereas the n-type phase becomes increasingly conductive with Ea decreasing from ˜ 0.71 to 0.11 eV with increasing sintering temperature. These changes are attributed to small variations in stoichiometry that occur during high temperature ceramic processing with oxygen-loss playing a crucial role.

Electrical Conductivity Of Diamond Up To 1,200 Degrees C

NASA Technical Reports Server (NTRS)

Vandersande, Jan W.; Zoltan, Leslie D.

1993-01-01

Report discusses measurements of electrical conductivities of two synthetic diamond films, three synthetic diamondlike films, and two natural type IIa diamonds at temperatures from ambient to 1,200 degrees C. Measurements performed to compare electrical conductivities of state-of-the-art diamond films with those of natural insulating diamond, particularly at temperatures above 700 degrees C.

Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

NASA Astrophysics Data System (ADS)

Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

2012-07-01

Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

Electrical Conductivity of Ferritin Proteins by Conductive AFM

NASA Technical Reports Server (NTRS)

Xu, Degao; Watt, Gerald D.; Harb, John N.; Davis, Robert C.

2005-01-01

Electrical conductivity measurements were performed on single apoferritin and holoferritin molecules by conductive atomic force microscopy. Conductivity of self-assembled monolayer films of ferritin molecules on gold surfaces was also measured. Holoferritin was 5-25 times more conductive than apoferritin, indicating that for holoferritin most electron-transfer goes through the ferrihydrite core. With 1 V applied, the average electrical currents through single holoferritin and apoferritin molecules were 2.6 PA and 0.19 PA, respectively.

Contact-independent electrical conductance measurement

DOEpatents

Mentzel, Tamar S.; MacLean, Kenneth; Kastner, Marc A.; Ray, Nirat

2017-01-24

Electrical conductance measurement system including a one-dimensional semiconducting channel, with electrical conductance sensitive to electrostatic fluctuations, in a circuit for measuring channel electrical current. An electrically-conductive element is disposed at a location at which the element is capacitively coupled to the channel; a midpoint of the element aligned with about a midpoint of the channel, and connected to first and second electrically-conductive contact pads that are together in a circuit connected to apply a changing voltage across the element. The electrically-conductive contact pads are laterally spaced from the midpoint of the element by a distance of at least about three times a screening length of the element, given in SI units as (K.di-elect cons..sub.0/e.sup.2D(E.sub.F)).sup.1/2, where K is the static dielectric constant, .di-elect cons..sub.0 is the permittivity of free space, e is electron charge, and D(E.sub.F) is the density of states at the Fermi energy for the element.

Electrically conductive diamond electrodes

DOEpatents

Swain, Greg [East Lansing, MI; Fischer, Anne [Arlington, VA; Bennett, Jason [Lansing, MI; Lowe, Michael [Holt, MI

2009-05-19

An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably by chemical vapor deposition which are held together with a binder. The electrodes are useful for oxidation reduction in gas, such as hydrogen generation by electrolysis.

Polymers that Conduct Electricity.

ERIC Educational Resources Information Center

Edelson, Edward

1983-01-01

Although polymers are regarded as electrical insulators, it was discovered that they can be made to conduct electricity. This discovery has opened vast new practical and theoretical areas for exploration by physicists and chemists. Research studies with these conducting polymers and charge-transfer salts as well as possible applications are…

Electrical Conductivity in Textiles

NASA Technical Reports Server (NTRS)

2006-01-01

Copper is the most widely used electrical conductor. Like most metals, though, it has several drawbacks: it is heavy, expensive, and can break. Fibers that conduct electricity could be the solutions to these problems, and they are of great interest to NASA. Conductive fibers provide lightweight alternatives to heavy copper wiring in a variety of settings, including aerospace, where weight is always a chief concern. This is an area where NASA is always seeking improved materials. The fibers are also more cost-effective than metals. Expenditure is another area where NASA is always looking to make improvements. In the case of electronics that are confined to small spaces and subject to severe stress, copper is prone to breaking and losing connection over time. Flexible conductive fibers eliminate that problem. They are more supple and stronger than brittle copper and, thus, find good use in these and similar situations. While clearly a much-needed material, electrically conductive fibers are not readily available. The cost of new technology development, with all the pitfalls of troubleshooting production and the years of testing, and without the guarantee of an immediate market, is often too much of a financial hazard for companies to risk. NASA, however, saw the need for electrical fibers in its many projects and sought out a high-tech textile company that was already experimenting in this field, Syscom Technology, Inc., of Columbus, Ohio. Syscom was founded in 1993 to provide computer software engineering services and basic materials research in the areas of high-performance polymer fibers and films. In 1999, Syscom decided to focus its business and technical efforts on development of high-strength, high-performance, and electrically conductive polymer fibers. The company developed AmberStrand, an electrically conductive, low-weight, strong-yet-flexible hybrid metal-polymer YARN.

Self-healable electrically conducting wires for wearable microelectronics.

PubMed

Sun, Hao; You, Xiao; Jiang, Yishu; Guan, Guozhen; Fang, Xin; Deng, Jue; Chen, Peining; Luo, Yongfeng; Peng, Huisheng

2014-09-01

Electrically conducting wires play a critical role in the advancement of modern electronics and in particular are an important key to the development of next-generation wearable microelectronics. However, the thin conducting wires can easily break during use, and the whole device fails to function as a result. Herein, a new family of high-performance conducting wires that can self-heal after breaking has been developed by wrapping sheets of aligned carbon nanotubes around polymer fibers. The aligned carbon nanotubes offer an effective strategy for the self-healing of the electric conductivity, whereas the polymer fiber recovers its mechanical strength. A self-healable wire-shaped supercapacitor fabricated from a wire electrode of this type maintained a high capacitance after breaking and self-healing. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Computational analysis of electrical conduction in hybrid nanomaterials with embedded non-penetrating conductive particles

NASA Astrophysics Data System (ADS)

Cai, Jizhe; Naraghi, Mohammad

2016-08-01

In this work, a comprehensive multi-resolution two-dimensional (2D) resistor network model is proposed to analyze the electrical conductivity of hybrid nanomaterials made of insulating matrix with conductive particles such as CNT reinforced nanocomposites and thick film resistors. Unlike existing approaches, our model takes into account the impenetrability of the particles and their random placement within the matrix. Moreover, our model presents a detailed description of intra-particle conductivity via finite element analysis, which to the authors’ best knowledge has not been addressed before. The inter-particle conductivity is assumed to be primarily due to electron tunneling. The model is then used to predict the electrical conductivity of electrospun carbon nanofibers as a function of microstructural parameters such as turbostratic domain alignment and aspect ratio. To simulate the microstructure of single CNF, randomly positioned nucleation sites were seeded and grown as turbostratic particles with anisotropic growth rates. Particle growth was in steps and growth of each particle in each direction was stopped upon contact with other particles. The study points to the significant contribution of both intra-particle and inter-particle conductivity to the overall conductivity of hybrid composites. Influence of particle alignment and anisotropic growth rate ratio on electrical conductivity is also discussed. The results show that partial alignment in contrast to complete alignment can result in maximum electrical conductivity of whole CNF. High degrees of alignment can adversely affect conductivity by lowering the probability of the formation of a conductive path. The results demonstrate approaches to enhance electrical conductivity of hybrid materials through controlling their microstructure which is applicable not only to carbon nanofibers, but also many other types of hybrid composites such as thick film resistors.

Electrically conductive composite material

DOEpatents

Clough, R.L.; Sylwester, A.P.

1989-05-23

An electrically conductive composite material is disclosed which comprises a conductive open-celled, low density, microcellular carbon foam filled with a non-conductive polymer or resin. The composite material is prepared in a two-step process consisting of first preparing the microcellular carbon foam from a carbonizable polymer or copolymer using a phase separation process, then filling the carbon foam with the desired non-conductive polymer or resin. The electrically conductive composites of the present invention has a uniform and consistent pattern of filler distribution, and as a result is superior over prior art materials when used in battery components, electrodes, and the like. 2 figs.

Electrically conductive composite material

DOEpatents

Clough, R.L.; Sylwester, A.P.

1988-06-20

An electrically conductive composite material is disclosed which comprises a conductive open-celled, low density, microcellular carbon foam filled with a non-conductive polymer or resin. The composite material is prepared in a two-step process consisting of first preparing the microcellular carbon foam from a carbonizable polymer or copolymer using a phase separation process, then filling the carbon foam with the desired non-conductive polymer or resin. The electrically conductive composites of the present invention has a uniform and consistent pattern of filler distribution, and as a result is superior over prior art materials when used in battery components, electrodes, and the like. 2 figs.

Electrically conductive composite material

DOEpatents

Clough, Roger L.; Sylwester, Alan P.

1989-01-01

An electrically conductive composite material is disclosed which comprises a conductive open-celled, low density, microcellular carbon foam filled with a non-conductive polymer or resin. The composite material is prepared in a two-step process consisting of first preparing the microcellular carbon foam from a carbonizable polymer or copolymer using a phase separation process, then filling the carbon foam with the desired non-conductive polymer or resin. The electrically conductive composites of the present invention has a uniform and consistant pattern of filler distribution, and as a result is superior over prior art materials when used in battery components, electrodes, and the like.

D.C. electrical conductivity and conduction mechanism of some azo sulfonyl quinoline ligands and uranyl complexes.

PubMed

El-Ghamaz, N A; Diab, M A; El-Sonbati, A Z; Salem, O L

2011-12-01

Supramolecular coordination of dioxouranium(VI) heterochelates 5-sulphono-7-(4'-X phenylazo)-8-hydroxyquinoline HL(n) (n=1, X=CH(3); n=2, X=H; n=3, X=Cl; n=4, X=NO(2)) have been prepared and characterized with various physico-chemical techniques. The infrared spectral studies showed a monobasic bidentate behavior with the oxygen and azonitrogen donor system. The temperature dependence of the D.C. electrical conductivity of HL(n) ligands and their uranyl complexes has been studied in the temperature range 305-415 K. The thermal activation energies E(a) for HL(n) compounds were found to be in the range 0.44-0.9 eV depending on the nature of the substituent X. The complexation process decreased E(a) values to the range 0.043-045 eV. The electrical conduction mechanism has been investigated for all samples under investigation. It was found to obey the variable range hopping mechanism (VRH). Copyright © 2011 Elsevier B.V. All rights reserved.

Electrically Conductive and Optically Active Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Liao, Lei; Li, Yujing; Zhang, Hua; Huang, Yu; Duan, Xiangfeng

2009-01-01

We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching of highly doped n-type silicon (100) wafers in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of the as-grown silicon nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell nanowires, and entirely nanoporous nanowires by controlling the hydrogen peroxide concentration in the etching solution. The porous silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer, and are electrically conductive and optically active with visible photoluminescence. The combination of electronic and optical properties in the porous silicon nanowires may provide a platform for the novel optoelectronic devices for energy harvesting, conversion and biosensing. PMID:19807130

Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

NASA Astrophysics Data System (ADS)

Aziz, Umar Abdul; Nadhirah Mohamad Rashid, Nur; Rahmah Aid, Siti; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

2017-05-01

Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

NASA Astrophysics Data System (ADS)

Ueno, Kohei; Fudetani, Taiga; Arakawa, Yasuaki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

2017-12-01

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm-3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V-1 s-1 at a carrier concentration of 3.9 × 1020 cm-3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

Electrically Conductive Anodized Aluminum Surfaces

NASA Technical Reports Server (NTRS)

Nguyen, Trung Hung

2006-01-01

Anodized aluminum components can be treated to make them sufficiently electrically conductive to suppress discharges of static electricity. The treatment was conceived as a means of preventing static electric discharges on exterior satin-anodized aluminum (SAA) surfaces of spacecraft without adversely affecting the thermal-control/optical properties of the SAA and without need to apply electrically conductive paints, which eventually peel off in the harsh environment of outer space. The treatment can also be used to impart electrical conductivity to anodized housings of computers, medical electronic instruments, telephoneexchange equipment, and other terrestrial electronic equipment vulnerable to electrostatic discharge. The electrical resistivity of a typical anodized aluminum surface layer lies between 10(exp 11) and 10(exp 13) Omega-cm. To suppress electrostatic discharge, it is necessary to reduce the electrical resistivity significantly - preferably to < or = 10(exp 9) Omega-cm. The present treatment does this. The treatment is a direct electrodeposition process in which the outer anodized surface becomes covered and the pores in the surface filled with a transparent, electrically conductive metal oxide nanocomposite. Filling the pores with the nanocomposite reduces the transverse electrical resistivity and, in the original intended outer-space application, the exterior covering portion of the nanocomposite would afford the requisite electrical contact with the outer-space plasma. The electrical resistivity of the nanocomposite can be tailored to a value between 10(exp 7) and 10(exp 12) Omega-cm. Unlike electrically conductive paint, the nanocomposite becomes an integral part of the anodized aluminum substrate, without need for adhesive bonding material and without risk of subsequent peeling. The electrodeposition process is compatible with commercial anodizing production lines. At present, the electronics industry uses expensive, exotic

Electrical conductivity behavior of Gum Arabic biopolymer-Fe3O4 nanocomposites

NASA Astrophysics Data System (ADS)

Bhakat, D.; Barik, P.; Bhattacharjee, A.

2018-01-01

Present work reports a study on the electrical conduction properties of some composites of Gum Arabic biopolymer and magnetite nanoparticles as host and guest, respectively, synthesized in different weight percentages. The nanocomposites are found to be non-extrinsic type of semiconductors with guest content dependent trap distribution of charge carriers. Conductivity of these materials increases with increasing guest content along with a concomitant decrease in the activation energy. Percolation theory has been employed for the analysis of the electrical conductivity results to explore the effect of the guest on the electrical conductivity of the host.

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langer, Fabian, E-mail: fabian.langer@physik.uni-wuerzburg.de; Perl, Svenja; Kamp, Martin

2015-02-09

In this work, we report a p- to n-type conductivity transition of GaInNAs (1.0 eV bandgap) layers in p-i-n dilute nitride solar cells continuously controlled by the V/III ratio during growth. Near the transition region, we were able to produce GaInNAs layers with very low effective electrically active doping concentrations resulting in wide depleted areas. We obtained internal quantum efficiencies (IQEs) up to 85% at 0.2 eV above the bandgap. However, the high IQE comes along with an increased dark current density resulting in a decreased open circuit voltage of about 0.2 V. This indicates the formation of non-radiant defect centers related tomore » the p-type to n-type transition. Rapid-thermal annealing of the solar cells on the one hand helps to anneal some of these defects but on the other hand increases the effective doping concentrations.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Seebeck Effects in N-Type and P-Type Polymers Driven Simultaneously by Surface Polarization and Entropy Differences Based on Conductor/Polymer/Conductor Thin-Film Devices

DOE PAGES

Hu, Dehua; Liu, Qing; Tisdale, Jeremy; ...

2015-04-15

This paper reports Seebeck effects driven by both surface polarization difference and entropy difference by using intramolecular charge-transfer states in n-type and p-type conjugated polymers, namely IIDT and IIDDT, based on vertical conductor/polymer/conductor thin-film devices. Large Seebeck coefficients of -898 V/K and 1300 V/K from are observed from n-type IIDT p-type IIDDT, respectively, when the charge-transfer states are generated by a white light illumination of 100 mW/cm2. Simultaneously, electrical conductivities are increased from almost insulating states in dark condition to conducting states under photoexcitation in both n-type IIDT and p-type IIDDT devices. We find that the intramolecular charge-transfer states canmore » largely enhance Seebeck effects in the n-type IIDT and p-type IIDDT devices driven by both surface polarization difference and entropy difference. Furthermore, the Seebeck effects can be shifted between polarization and entropy regimes when electrical conductivities are changed. This reveals a new concept to develop Seebeck effects by controlling polarization and entropy regimes based on charge-transfer states in vertical conductor/polymer/conductor thin-film devices.« less

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

PubMed Central

Zheng, T. C.; Lin, W.; Liu, R.; Cai, D. J.; Li, J. C.; Li, S. P.; Kang, J. Y.

2016-01-01

A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole conductivity in conventional Mg-doped AlGaN SL which generally suffers from large potential barrier for holes. Electronic structure calculations within the first-principle theoretical framework indicate that the densities of states (DOS) of the valence band nearby the Fermi level are more delocalized along the c-axis than that in conventional SL, and the potential barrier significantly decreases. Hole concentration is greatly enhanced in the barrier of multidimensional SL. Detailed comparisons of partial charges and decomposed DOS reveal that the improvement of vertical conductance may be ascribed to the stronger pz hybridization between Mg and N. Based on the theoretical analysis, highly conductive p-type multidimensional Al0.63Ga0.37N/Al0.51Ga0.49N SLs are grown with identified steps via metalorganic vapor-phase epitaxy. The hole concentration reaches up to 3.5 × 1018 cm−3, while the corresponding resistivity reduces to 0.7 Ω cm at room temperature, which is tens times improvement in conductivity compared with that of conventional SLs. High hole concentration can be maintained even at 100 K. High p-type conductivity in Al-rich structural material is an important step for the future design of superior AlGaN-based deep ultraviolet devices. PMID:26906334

Electrically conductive doped block copolymer of polyacetylene and polyisoprene

DOEpatents

Aldissi, Mahmoud

1985-01-01

An electrically conductive block copolymer of polyisoprene and polyacetyl and a method of making the same are disclosed. The polymer is prepared by first polymerizing isoprene with n-butyllithium in a toluene solution to form an active isoprenyllithium polymer. The active polymer is reacted with an equimolar amount of titanium butoxide and subsequently exposed to gaseous acetylene. A block copolymer of polyisoprene and polyacetylene is formed. The copolymer is soluble in common solvents and may be doped with I.sub.2 to give it an electrical conductivity in the metallic regime.

Electrical conductivity in Langmuir-Blodgett films of n-alkyl cyanobiphenyls using current sensing atomic force microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gayathri, H. N.; Suresh, K. A., E-mail: suresh@cnsms.res.in

2015-06-28

We report our studies on the nanoscale electrical conductivity in monolayers of n-alkyl cyanobiphenyl materials deposited on solid surface. Initially, the 8CB, 9CB, and 10CB monolayer films were prepared by the Langmuir technique at air-water interface and characterized by surface manometry and Brewster angle microscopy. The monolayer films were transferred on to solid substrates by the Langmuir-Blodgett (L-B) technique. The 8CB, 9CB, and 10CB monolayer L-B films were deposited on freshly cleaved mica and studied by atomic force microscope (AFM), thereby measuring the film thickness as ∼1.5 nm. The electrical conductivity measurements were carried out on 9CB and 10CB monolayer L-Bmore » films deposited onto highly ordered pyrolytic graphite using current sensing AFM. The nanoscale current-voltage (I-V) measurements show a non-linear variation. The nature of the curve indicates electron tunneling to be the mechanism for electrical conduction. Furthermore, analysis of the I-V curve reveals a transition in the electron conduction mechanism from direct tunneling to injection tunneling. From the transition voltage, we have estimated the values of barrier height for 9CB and 10CB to be 0.71 eV and 0.37 eV, respectively. For both 9CB and 10CB, the effective mass of electron was calculated to be 0.021 m{sub e} and 0.065 m{sub e}, respectively. These parameters are important in the design of molecular electronic devices.« less

Computer modeling of the combined effects of perfusion, electrical conductivity, and thermal conductivity on tissue heating patterns in radiofrequency tumor ablation.

PubMed

Ahmed, Muneeb; Liu, Zhengjun; Humphries, Stanley; Goldberg, S Nahum

2008-11-01

To use an established computer simulation model of radiofrequency (RF) ablation to characterize the combined effects of varying perfusion, and electrical and thermal conductivity on RF heating. Two-compartment computer simulation of RF heating using 2-D and 3-D finite element analysis (ETherm) was performed in three phases (n = 88 matrices, 144 data points each). In each phase, RF application was systematically modeled on a clinically relevant template of application parameters (i.e., varying tumor and surrounding tissue perfusion: 0-5 kg/m(3)-s) for internally cooled 3 cm single and 2.5 cm cluster electrodes for tumor diameters ranging from 2-5 cm, and RF application times (6-20 min). In the first phase, outer thermal conductivity was changed to reflect three common clinical scenarios: soft tissue, fat, and ascites (0.5, 0.23, and 0.7 W/m- degrees C, respectively). In the second phase, electrical conductivity was changed to reflect different tumor electrical conductivities (0.5 and 4.0 S/m, representing soft tissue and adjuvant saline injection, respectively) and background electrical conductivity representing soft tissue, lung, and kidney (0.5, 0.1, and 3.3 S/m, respectively). In the third phase, the best and worst combinations of electrical and thermal conductivity characteristics were modeled in combination. Tissue heating patterns and the time required to heat the entire tumor +/-a 5 mm margin to >50 degrees C were assessed. Increasing background tissue thermal conductivity increases the time required to achieve a 50 degrees C isotherm for all tumor sizes and electrode types, but enabled ablation of a given tumor size at higher tissue perfusions. An inner thermal conductivity equivalent to soft tissue (0.5 W/m- degrees C) surrounded by fat (0.23 W/m- degrees C) permitted the greatest degree of tumor heating in the shortest time, while soft tissue surrounded by ascites (0.7 W/m- degrees C) took longer to achieve the 50 degrees C isotherm, and complete ablation

Electrically-Conductive Polyaramid Cable And Fabric

NASA Technical Reports Server (NTRS)

Orban, Ralph F.

1988-01-01

Tows coated with metal provide strength and conductance. Cable suitable for use underwater made of electrically conductive tows of metal-coated polyaramid filaments surrounded by electrically insulating jacket. Conductive tows used to make conductive fabrics. Tension borne by metal-coated filaments, so upon release, entire cable springs back to nearly original length without damage.

Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy

DOE PAGES

Akin, Cevat; Yi, Jingang; Feldman, Leonard C.; ...

2015-05-05

For nanowires of the same composition, and even fabricated within the same batch, often exhibit electrical conductivities that can vary by orders of magnitude. Unfortunately, existing electrical characterization methods are time-consuming, making the statistical survey of highly variable samples essentially impractical. Here, we demonstrate a contactless, solution-based method to efficiently measure the electrical conductivity of 1D nanomaterials based on their transient alignment behavior in ac electric fields of different frequencies. In comparison with direct transport measurements by probe-based scanning tunneling microscopy shows that electro-orientation spectroscopy can quantitatively measure nanowire conductivity over a 5-order-of-magnitude range, 10–5–1 Ω–1 m–1 (corresponding to resistivitiesmore » in the range 102–107 Ω·cm). With this method, we statistically characterize the conductivity of a variety of nanowires and find significant variability in silicon nanowires grown by metal-assisted chemical etching from the same wafer. We also find that the active carrier concentration of n-type silicon nanowires is greatly reduced by surface traps and that surface passivation increases the effective conductivity by an order of magnitude. Moreover, this simple method makes electrical characterization of insulating and semiconducting 1D nanomaterials far more efficient and accessible to more researchers than current approaches. Electro-orientation spectroscopy also has the potential to be integrated with other solution-based methods for the high-throughput sorting and manipulation of 1D nanomaterials for postgrowth device assembly.« less

Size dictated thermal conductivity of GaN

NASA Astrophysics Data System (ADS)

Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.; Talin, A. Alec; Rost, Christina M.; Maria, Jon-Paul; Gaskins, John T.; Hopkins, Patrick E.; Allerman, Andrew A.

2016-09-01

The thermal conductivity of n- and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 μm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (1015-1018 cm-3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends—and their overall reduction relative to bulk—are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.

Electrically conductive anodized aluminum coatings

NASA Technical Reports Server (NTRS)

Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

2001-01-01

A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Heat-Electric Power Conversion Without Temperature Difference Using Only n-Type Ba8Au x Si46-x Clathrate with Au Compositional Gradient

NASA Astrophysics Data System (ADS)

Osakabe, Yuki; Tatsumi, Shota; Kotsubo, Yuichi; Iwanaga, Junpei; Yamasoto, Keita; Munetoh, Shinji; Furukimi, Osamu; Nakashima, Kunihiko

2018-02-01

Thermoelectric power generation is typically based on the Seebeck effect under a temperature gradient. However, the heat flux generated by the temperature difference results in low conversion efficiency. Recently, we developed a heat-electric power conversion mechanism using a material consisting of a wide-bandgap n-type semiconductor, a narrow-bandgap intrinsic semiconductor, and a wide-bandgap p-type semiconductor. In this paper, we propose a heat-electric power conversion mechanism in the absence of a temperature difference using only n-type Ba8Au x Si46-x clathrate. Single-crystal Ba8Au x Si46-x clathrate with a Au compositional gradient was synthesized by Czochralski method. Based on the results of wavelength-dispersive x-ray spectroscopy and Seebeck coefficient measurements, the presence of a Au compositional gradient in the sample was confirmed. It also observed that the electrical properties changed gradually from wide-bandgap n-type to narrow-bandgap n-type. When the sample was heated in the absence of a temperature difference, the voltage generated was approximately 0.28 mV at 500°C. These results suggest that only an n-type semiconductor with a controlled bandgap can generate electric power in the absence of a temperature difference.

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

NASA Astrophysics Data System (ADS)

Hamri, D.; Teffahi, A.; Djeghlouf, A.; Chalabi, D.; Saidane, A.

2018-04-01

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si0.65Ge0.35 (FM1) and Pt/n-Si0.65Ge0.35(PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height (ΦB0), ideality factor (n) and series resistance (RS) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole-Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (NSS) indicated a difference in interface reactivity. Distribution profiles of series resistance (RS) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

NASA Astrophysics Data System (ADS)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Metal-like electrical conductivity in LaxSr2-xTiMoO6 oxides for high temperature thermoelectric power generation.

PubMed

Saxena, Mandvi; Maiti, Tanmoy

2017-05-09

Increasing electrical conductivity in oxides, which are inherently insulators, can be a potential route in developing oxide-based thermoelectric power generators with higher energy conversion efficiency. In the present work, environmentally friendly non-toxic double perovskite La x Sr 2-x TiMoO 6 (LSTM) ceramics were synthesized using a solid-state reaction route by optimizing the sintering temperature and atmosphere for high temperature thermoelectric applications. Rietveld refinement of XRD data confirmed a single-phase solid solution with a cubic structure in these double perovskites with the space-group Pm3[combining macron]m. SEM studies showed a highly dense microstructure in these ceramics. High electrical conductivity on the order of 10 5 S m -1 and large carrier concentration (∼10 22 cm -3 ) were obtained in these materials. The temperature-dependent electrical conductivity measurement showed that the LSTM ceramics exhibit a semiconductor to metal transition. Thermopower (S) measurements demonstrated the conductivity switching from a p-type to n-type behavior at higher temperature. A temperature dependent Seebeck coefficient was further explained using a model for coexistence of both types of charge carriers in these oxides. A conductivity mechanism of these double perovskites was found to be governed by a small polaron hopping model.

Electrical conduction in PVDF/ZnO-Ag nanocomposites

NASA Astrophysics Data System (ADS)

Singh, Utpal; Jha, Anal K.; Chandra, K. P.; Kolte, Jayant; Kulkarni, A. R.; Prasad, K.

2018-05-01

A hybrid combination of Ag and ZnO nanoparticles were utilized to fabricate PVDF/ZnO(90/10)-Ag nanocomposites (with Ag as filler: 0.5, 1 and 1.5%) utilizing melt-mixing technique. X-ray diffraction study confirmed the formations of nanocomposites. Electric modulus analysis indicated the dielectric relaxation in this system to be of non- Debye type. Correlated barrier hopping model successfully explained the charge conduction in PVDF/ZnO-Ag nanocomposites and ac conductivity data followed Jonscher's power law.

Investigation of the electrical characteristics of electrically conducting yarns and fabrics

NASA Astrophysics Data System (ADS)

Akbarov, R. D.; Baymuratov, B. H.; Akbarov, D. N.; Ilhamova, M.

2017-11-01

Electro-conductive textile materials and products are used presently giving solutions to the problems, related to static electricity, electromagnetic shielding and electromagnetic radiation. Thus a study of their electro-physical characteristics, character of conductivity, possibility of forecasting of electric parameters etc has a substantial value. This work shows the possibility of production electro-conducting textile materials with stable anti-static properties by introduction of electro-conducting yarn into the structure of fabrics. The results of the research, directed to the study of the electro-physical characteristics of electroconducting yarn and fabrics, are influenced by the frequent washing of polyester fabrics containing the different amounts of electro-conducting filaments in the composition. This article reviews the results of the related research, of the electrical characteristics of the yarn and fabric, of the effect of multiple water treatments on the electrical properties of polyester fabrics, containing in their composition different amounts of electrically conductive yarns.

Size dictated thermal conductivity of GaN

DOE PAGES

Thomas Edwin Beechem; McDonald, Anthony E.; Fuller, Elliot James; ...

2016-04-01

The thermal conductivity on n- and p-type doped gallium nitride (GaN) epilayers having thickness of 3-4 μm was investigated using time domain thermoreflectance (TDTR). Despite possessing carrier concentrations ranging across 3 decades (10 15 – 10 18 cm –3), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends–and their overall reduction relative to bulk–are explained leveraging established scattering models where it is shown that size effects play a primary role in limiting thermal conductivity for layers even tens ofmore » microns thick. GaN device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness.« less

p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

PubMed

Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

2015-08-05

Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

Development of Tailorable Electrically Conductive Thermal Control Material Systems

NASA Technical Reports Server (NTRS)

Deshpande, M. S.; Harada, Y.

1997-01-01

The optical characteristics of surfaces on spacecraft are fundamental parameters in controlling its temperature. Passive thermal control coatings with designed solar absorptance and infrared emittance properties have been developed and have been in use for some time. In this total space environment, the coating must be stable and maintain its desired optical properties as well as mechanical properties for the course of the mission lifetime. The mission lifetimes are increasing and in our quest to save weight, newer substrates are being integrated which limit electrical grounding schemes. All of this has added to already existing concerns about spacecraft charging and related spacecraft failures or operational failures. The concern is even greater for thermal control surfaces that are very large. One way of alleviating such concerns is to design new thermal control material systems (TCMS) that can help to mitigate charging via providing charge leakage paths. The objective of this program was to develop two types of passive electrically conductive TCMS. The first was a highly absorbing/emitting black surface and the second was a low (alpha(sub s)/epsilon(sub N)) type white surface. The surface resistance goals for the black absorber was 10(exp 4) to 10(exp 9) Omega/square, and for the white surfaces it was 10(exp 6) to 10(exp 10) Omega/square. Several material system concepts were suggested and evaluated for space environment stability and electrical performance characterization. Our efforts in designing and evaluating these material systems have resulted in several developments. New concepts, pigments and binders have been developed to provide new engineering quality TCMS. Some of these have already found application on space hardware, some are waiting to be recognized by thermal designers, and some require further detailed studies to become state-of-the-art for future space hardware and space structures. Our studies on baseline state-of-the-art materials and

Thermal and Electrical Conductivity Probe for Phoenix Mars Lander

NASA Technical Reports Server (NTRS)

2007-01-01

NASA's Phoenix Mars Lander will assess how heat and electricity move through Martian soil from one spike or needle to another of a four-spike electronic fork that will be pushed into the soil at different stages of digging by the lander's Robotic Arm.

The four-spike tool, called the thermal and electrical conductivity probe, is in the middle-right of this photo, mounted near the end of the arm near the lander's scoop (upper left).

In one type of experiment with this tool, a pulse of heat will be put into one spike, and the rate at which the temperature rises on the nearby spike will be recorded, along with the rate at which the heated spike cools. A little bit of ice can make a big difference in how well soil conducts heat. Similarly, soil's electrical conductivity -- also tested with this tool -- is a sensitive

indicator of moisture in the soil. This device adapts technology used in soil-moisture gauges for irrigation-control systems. The conductivity probe has an additional role besides soil analysis. It will serve as a hunidity sensor when held in the air.

Double-Wall Nanotubes and Graphene Nanoplatelets for Hybrid Conductive Adhesives with Enhanced Thermal and Electrical Conductivity.

PubMed

Messina, Elena; Leone, Nancy; Foti, Antonino; Di Marco, Gaetano; Riccucci, Cristina; Di Carlo, Gabriella; Di Maggio, Francesco; Cassata, Antonio; Gargano, Leonardo; D'Andrea, Cristiano; Fazio, Barbara; Maragò, Onofrio Maria; Robba, Benedetto; Vasi, Cirino; Ingo, Gabriel Maria; Gucciardi, Pietro Giuseppe

2016-09-07

Improving the electrical and thermal properties of conductive adhesives is essential for the fabrication of compact microelectronic and optoelectronic power devices. Here we report on the addition of a commercially available conductive resin with double-wall carbon nanotubes and graphene nanoplatelets that yields simultaneously improved thermal and electrical conductivity. Using isopropanol as a common solvent for the debundling of nanotubes, exfoliation of graphene, and dispersion of the carbon nanostructures in the epoxy resin, we obtain a nanostructured conducting adhesive with thermal conductivity of ∼12 W/mK and resistivity down to 30 μΩ cm at very small loadings (1% w/w for nanotubes and 0.01% w/w for graphene). The low filler content allows one to keep almost unchanged the glass-transition temperature, the viscosity, and the curing parameters. Die shear measurements show that the nanostructured resins fulfill the MIL-STD-883 requirements when bonding gold-metalized SMD components, even after repeated thermal cycling. The same procedure has been validated on a high-conductivity resin characterized by a higher viscosity, on which we have doubled the thermal conductivity and quadrupled the electrical conductivity. Graphene yields better performances with respect to nanotubes in terms of conductivity and filler quantity needed to improve the resin. We have finally applied the nanostructured resins to bond GaN-based high-electron-mobility transistors in power-amplifier circuits. We observe a decrease of the GaN peak and average temperatures of, respectively, ∼30 °C and ∼10 °C, with respect to the pristine resin. The obtained results are important for the fabrication of advanced packaging materials in power electronic and microwave applications and fit the technological roadmap for CNTs, graphene, and hybrid systems.

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells

NASA Astrophysics Data System (ADS)

Łepkowski, Sławomir P.; Bardyszewski, Witold

2017-05-01

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells.

PubMed

Łepkowski, Sławomir P; Bardyszewski, Witold

2017-05-17

We study theoretically the topological phase transition and the Rashba spin-orbit interaction in electrically biased InN/GaN quantum wells. We show that that for properly chosen widths of quantum wells and barriers, one can effectively tune the system through the topological phase transition applying an external electric field perpendicular to the QW plane. We find that in InN/GaN quantum wells with the inverted band structure, when the conduction band s-type level is below the heavy hole and light hole p-type levels, the spin splitting of the subbands decreases with increasing the amplitude of the electric field in the quantum wells, which reveals the anomalous Rashba effect. Derived effective Rashba Hamiltonians can describe the subband spin splitting only for very small wave vectors due to strong coupling between the subbands. Furthermore, we demonstrate that for InN/GaN quantum wells in a Hall bar geometry, the critical voltage for the topological phase transition depends distinctly on the width of the structure and a significant spin splitting of the edge states lying in the 2D band gap can be almost switched off by increasing the electric field in quantum wells only by a few percent. We show that the dependence of the spin splitting of the upper branch of the edge state dispersion curve on the wave vector has a threshold-like behavior with the on/off spin splitting ratio reaching two orders of magnitude for narrow Hall bars. The threshold wave vector depends weakly on the Hall bar width, whereas it increases significantly with the bias voltage due to an increase of the energetic distance between the s-type and p-type quantum well energy levels and a reduction of the coupling between the subbands.

Random network model of electrical conduction in two-phase rock

NASA Astrophysics Data System (ADS)

Fuji-ta, Kiyoshi; Seki, Masayuki; Ichiki, Masahiro

2018-05-01

We developed a cell-type lattice model to clarify the interconnected conductivity mechanism of two-phase rock. We quantified electrical conduction networks in rock and evaluated electrical conductivity models of the two-phase interaction. Considering the existence ratio of conductive and resistive cells in the model, we generated natural matrix cells simulating a natural mineral distribution pattern, using Mersenne Twister random numbers. The most important and prominent feature of the model simulation is a drastic increase in the pseudo-conductivity index for conductor ratio R > 0.22. This index in the model increased from 10-4 to 100 between R = 0.22 and 0.9, a change of four orders of magnitude. We compared our model responses with results from previous model studies. Although the pseudo-conductivity computed by the model differs slightly from that of the previous model, model responses can account for the conductivity change. Our modeling is thus effective for quantitatively estimating the degree of interconnection of rock and minerals.

Electrical conduction in polymer dielectrics

NASA Technical Reports Server (NTRS)

Cotts, D. B.

1985-01-01

The use of polymer dielectrics with moderate resistivities could reduce or eliminate problems associated with spacecraft charging. The processes responsible for conduction and the properties of electroactive polymers are reviewed, and correlations drawn between molecular structure and electrical conductivity. These structure-property relationships led to the development of several new electroactive polymer compositions and the identification of several systems that have the requisite thermal, mechanical, environmental and electrical properties for use in spacecraft.

Effect of the type of metal on the electrical conductivity and thermal properties of metal complexes: The relation between ionic radius of metal complexes and electrical conductivity

NASA Astrophysics Data System (ADS)

Morgan, Sh. M.; El-Ghamaz, N. A.; Diab, M. A.

2018-05-01

Co(II) complexes (1-4) and Ni(II) complexes (5-8) were prepared and characterized by elemental analysis, IR spectra and thermal analysis data. Thermal decomposition of all complexes was discussed using thermogravimetric analysis. The dielectric properties and alternating current conductivity were investigated in the frequency range 0.1-100 kHz and temperature range 300-660 K. The thermal activation energies of electrical conductivity (ΔE1 and ΔE2) values for complexes were calculated and discussed. The values of ΔE1 and ΔE2 for complexes (1-8) were found to decrease with increasing the frequency. Ac electrical conductivity (σac) values increases with increasing temperatures and the values of σac for Co(II) complexes are greater than Ni(II) complexes. Co(II) complexes showed a higher conductivity than other Ni(II) complexes due to the higher crystallinity as confirmed by X-ray diffraction analysis.

Electrical Behavior on N-Type Dopants in AlGaAs Alloys: Shallow Levels and DX Centers

DTIC Science & Technology

1990-11-01

FORCE OFFICE OF SCIENTIFIC RESEARCH GRANT AFOSR-88-0316 EOSRD-LONDON DEPARTAMENTO DE INGENIERIA ELECTRONICA E.T.S. INGENIEROS DE TELECOMUNICACION ...INGENIEROS DE TELECOMUNICACION . MADRID OCTOBER 1990 2 ABSTRACT The electrical properties of n- type AlxGaixAs, for x > 0.2, are governed by deep donor

Electrically Conducting Polyaniline Microtube Blends

DTIC Science & Technology

2004-08-01

SMC-TR-05-01 AEROSPACE REPORT NO. TR-2004(8565)-4 Electrically Conducting Polyaniline Microtube Blends 1 August 2004 Prepared by A. R. HOPKINS, R. A...It is published only for the exchange and stimulation of ideas. Michael Zambrana SMC/AXE Form Approved REPORT DOCUMENTATION PAGE OMB No. 0704-0188...0001 Electrically Conducting Polyaniline Microtube Blends 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER A. R. Hopkins, R

Synthesis and characterization of n-type NiO:Al thin films for fabrication of p-n NiO homojunctions

NASA Astrophysics Data System (ADS)

Sun, Hui; Liao, Ming-Han; Chen, Sheng-Chi; Li, Zhi-Yue; Lin, Po-Chun; Song, Shu-Mei

2018-03-01

n-type NiO:Al thin films were deposited by RF magnetron sputtering. Their optoelectronic properties versus Al target power was investigated. The results show that with increasing Al target power, the conduction type of NiO films changes from p-type to n-type. The variation of the film’s electrical and optical properties depends on Al amount in the film. When Al target power is relatively low, Al3+ cations tend to enter nickel vacancy sites, which makes the lattice structure of NiO more complete. This improves the carrier mobility and film’s transmittance. However, when Al target power exceeds 40 W, Al atoms begin to enter into interstitial sites and form an Al cluster in the NiO film. This behavior is beneficial for improving the film’s n-type conductivity but degrades the film’s transmittance. Finally, Al/(p-type NiO)/(n-type NiO:Al)/ITO homojunctions were fabricated. Their performance was compared with Al/(p-type NiO)/ITO heterojunctions without an n-type NiO layer. Thanks to the better interface quality between the two NiO layers, the homojunctions present better performance.

The electrical conductivities of candidate beam-waveguide antenna shroud materials

NASA Technical Reports Server (NTRS)

Otoshi, T. Y.; Franco, M. M.

1994-01-01

The shroud on the beam-waveguide (BWG) antenna at DSS 13 is made from highly magnetic American Society for Testing and Materials (ASTM) A36 steel. Measurements at 8.42 GHz showed that this material (with paint) has a very poor electrical conductivity that is 600 times worse than aluminum. In cases where the BWG mirrors might be slightly misaligned, unintentional illumination and poor electrical conductivity of the shroud walls can cause system noise temperature to be increased significantly. This potential increase of noise temperature contribution can be reduced through the use of better conductivity materials for the shroud walls. An alternative is to attempt to improve the conductivity of the currently used ASTM A36 steel by means of some type of plating, surface treatment, or high-conductivity paints. This article presents the results of a study made to find improved materials for future shrouds and mirror supports.

Electrically conductive polyimides containing silver trifluoroacetylacetonate

NASA Technical Reports Server (NTRS)

Rancourt, James D. (Inventor); Stoakley, Diane M. (Inventor); Caplan, Maggie L. (Inventor); St. Clair, Anne K. (Inventor); Taylor, Larry T. (Inventor)

1996-01-01

Polyimides with enhanced electrical conductivity are produced by adding a silver ion-containing additive to the polyamic acid resin formed by the condensation of an aromatic dianhydride with an aromatic diamine. After thermal treatment the resulting polyimides had surface conductivities in the range of 1.7.times.10.sup.-3 4.5 .OMEGA..sup.-1 making them useful in low the electronics industry as flexible, electrically conductive polymeric films and coatings.

Electrically conductive connection for an electrode

DOEpatents

Hornack, Thomas R.; Chilko, Robert J.

1986-01-01

An electrically conductive connection for an electrode assembly of an electrolyte cell in which aluminum is produced by electrolysis in a molten salt is described. The electrode assembly comprises an electrode flask and a conductor rod. The flask has a collar above an area of minimum flask diameter. The electrically conductive connection comprises the electrode flask, the conductor rod and a structure bearing against the collar and the conductor rod for pulling the conductor rod into compressive and electrical contact with the flask.

Using differential scanning calorimetry, laser refractometry, electrical conductivity and spectrophotometry for discrimination of different types of Bulgarian honey

NASA Astrophysics Data System (ADS)

Vlaeva, I.; Nikolova, K.; Bodurov, I.; Marudova, M.; Tsankova, D.; Lekova, S.; Viraneva, A.; Yovcheva, T.

2017-01-01

The potential of several physical methods for investigation of the botanical origin of honey has been discussed. Samples from the three most prevalent types of honey in Bulgaria (acacia, linden and honeydew) have been used. They have been examined by laser refractometry, UV, VIS and FTIR spectroscopy, electric conductivity measurement and differential scanning calorimetry. The purpose of this study was to reveal the physical characterizations of honeys from different flora produced in Bulgaria and to identify honeys with a high apitherapy potential for future studies.

Method of forming an electrically conductive cellulose composite

DOEpatents

Evans, Barbara R [Oak Ridge, TN; O'Neill, Hugh M [Knoxville, TN; Woodward, Jonathan [Ashtead, GB

2011-11-22

An electrically conductive cellulose composite includes a cellulose matrix and an electrically conductive carbonaceous material incorporated into the cellulose matrix. The electrical conductivity of the cellulose composite is at least 10 .mu.S/cm at 25.degree. C. The composite can be made by incorporating the electrically conductive carbonaceous material into a culture medium with a cellulose-producing organism, such as Gluconoacetobacter hansenii. The composites can be used to form electrodes, such as for use in membrane electrode assemblies for fuel cells.

Electrically conductive connection for an electrode

DOEpatents

Hornack, T.R.; Chilko, R.J.

1986-09-02

An electrically conductive connection for an electrode assembly of an electrolyte cell in which aluminum is produced by electrolysis in a molten salt is described. The electrode assembly comprises an electrode flask and a conductor rod. The flask has a collar above an area of minimum flask diameter. The electrically conductive connection comprises the electrode flask, the conductor rod and a structure bearing against the collar and the conductor rod for pulling the conductor rod into compressive and electrical contact with the flask. 2 figs.

Colossal change in thermopower with temperature-driven p-n-type conduction switching in La x Sr2-x TiFeO6 double perovskites

NASA Astrophysics Data System (ADS)

Roy, Pinku; Maiti, Tanmoy

2018-02-01

Double perovskite materials have been studied in detail by many researchers, as their magnetic and electronic properties can be controlled by the substitution of alkaline earth metals or lanthanides in the A site and transition metals in the B site. Here we report the temperature-driven, p-n-type conduction switching assisted, large change in thermopower in La3+-doped Sr2TiFeO6-based double perovskites. Stoichiometric compositions of La x Sr2-x TiFeO6 (LSTF) with 0  ⩽  x  ⩽  0.25 were synthesized by the solid-state reaction method. Rietveld refinement of room-temperature XRD data confirmed a single-phase solid solution with cubic crystal structure and Pm\\bar{3}m space group. From temperature-dependent electrical conductivity and Seebeck coefficient (S) studies it is evident that all the compositions underwent an intermediate semiconductor-to-metal transition before the semiconductor phase reappeared at higher temperature. In the process of semiconductor-metal-semiconductor transition, LSTF compositions demonstrated temperature-driven p-n-type conduction switching behavior. The electronic restructuring which occurs due to the intermediate metallic phase between semiconductor phases leads to the colossal change in S for LSTF oxides. The maximum drop in thermopower (ΔS ~ 2516 µV K-1) was observed for LSTF with x  =  0.1 composition. Owing to their enormous change in thermopower of the order of millivolts per kelvin, integrated with p-n-type resistance switching, these double perovskites can be used for various high-temperature multifunctional device applications such as diodes, sensors, switches, thermistors, thyristors, thermal runaway monitors etc. Furthermore, the conduction mechanisms of these oxides were explained by the small polaron hopping model.

Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

NASA Astrophysics Data System (ADS)

Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

2017-06-01

p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p-n modules of bismuth telluride without any doping process.

3D electrical conductivity tomography of volcanoes

NASA Astrophysics Data System (ADS)

Soueid Ahmed, A.; Revil, A.; Byrdina, S.; Coperey, A.; Gailler, L.; Grobbe, N.; Viveiros, F.; Silva, C.; Jougnot, D.; Ghorbani, A.; Hogg, C.; Kiyan, D.; Rath, V.; Heap, M. J.; Grandis, H.; Humaida, H.

2018-05-01

Electrical conductivity tomography is a well-established galvanometric method for imaging the subsurface electrical conductivity distribution. We characterize the conductivity distribution of a set of volcanic structures that are different in terms of activity and morphology. For that purpose, we developed a large-scale inversion code named ECT-3D aimed at handling complex topographical effects like those encountered in volcanic areas. In addition, ECT-3D offers the possibility of using as input data the two components of the electrical field recorded at independent stations. Without prior information, a Gauss-Newton method with roughness constraints is used to solve the inverse problem. The roughening operator used to impose constraints is computed on unstructured tetrahedral elements to map complex geometries. We first benchmark ECT-3D on two synthetic tests. A first test using the topography of Mt. St Helens volcano (Washington, USA) demonstrates that we can successfully reconstruct the electrical conductivity field of an edifice marked by a strong topography and strong variations in the resistivity distribution. A second case study is used to demonstrate the versatility of the code in using the two components of the electrical field recorded on independent stations along the ground surface. Then, we apply our code to real data sets recorded at (i) a thermally active area of Yellowstone caldera (Wyoming, USA), (ii) a monogenetic dome on Furnas volcano (the Azores, Portugal), and (iii) the upper portion of the caldera of Kīlauea (Hawai'i, USA). The tomographies reveal some of the major structures of these volcanoes as well as identifying alteration associated with high surface conductivities. We also review the petrophysics underlying the interpretation of the electrical conductivity of fresh and altered volcanic rocks and molten rocks to show that electrical conductivity tomography cannot be used as a stand-alone technique due to the non-uniqueness in

Evaluation of electrical conductivity and equations of state of non-ideal plasma through microsecond timescale underwater electrical wire explosion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheftman, D.; Krasik, Ya. E.

2011-09-15

Experimental and simulation results of underwater electrical Cu, Al, and W wire explosions in the microsecond timescale are presented. It was shown that the electrical conductivity results for Cu and Al agree well with modified Lee-More and quantum molecular dynamic models for temperatures above 10 kK. The equation of state (EOS) values based on SESAME tables for Cu and Al were slightly modified for intermediate temperatures in order to obtain fitting between experimental and simulated exploding wire radial expansion. Also, it was shown that the electrical conductivity results and the EOS evaluation differ significantly from the results obtained in nanosecondmore » timescale experiments. Finally, it was found that underwater electrical W wire explosion is characterized by the appearance of non-uniformities along the z-axis of the wire. This phenomena adds uncertainty to the possibility of applying this type of experiments for evaluation of the electrical conductivity and EOS of W.« less

Development of n-type cobaltocene-encapsulated carbon nanotubes with remarkable thermoelectric property

PubMed Central

Fukumaru, Takahiro; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

2015-01-01

Direct conversion from heat to electricity is one of the important technologies for a sustainable society since large quantities of energy are wasted as heat. We report the development of a single-walled carbon nanotube (SWNT)-based high conversion efficiency, air-stable and flexible thermoelectric material. We prepared cobaltocene-encapsulated SWNTs (denoted CoCp2@SWNTs) and revealed that the material showed a negative-type (n-type) semiconducting behaviour (Seebeck coefficient: −41.8 μV K−1 at 320 K). The CoCp2@SWNT film was found to show a high electrical conductivity (43,200 S m−1 at 320 K) and large power factor (75.4 μW m−1 K−2) and the performance was remarkably stable under atmospheric conditions over a wide range of temperatures. The thermoelectric figure of merit (ZT) value of the CoCp2@SWNT film (0.157 at 320 K) was highest among the reported n-type organic thermoelectric materials due to the large power factor and low thermal conductivity (0.15 W m−1 K−1). These characteristics of the n-type CoCp2@SWNTs allowed us to fabricate a p-n type thermoelectric device by combination with an empty SWNT-based p-type film. The fabricated device exhibited a highly efficient power generation close to the calculated values even without any air-protective coating due to the high stability of the SWNT-based materials under atmospheric conditions. PMID:25608478

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. Themore » Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.« less

Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-05-23

Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solarmore » cells in n-i-p configuration.« less

Conduction of Electrical Current to and Through the Human Body: A Review

PubMed Central

Fish, Raymond M.; Geddes, Leslie A.

2009-01-01

Objective: The objective of this article is to explain ways in which electric current is conducted to and through the human body and how this influences the nature of injuries. Methods: This multidisciplinary topic is explained by first reviewing electrical and pathophysiological principles. There are discussions of how electric current is conducted through the body via air, water, earth, and man-made conductive materials. There are also discussions of skin resistance (impedance), internal body resistance, current path through the body, the let-go phenomenon, skin breakdown, electrical stimulation of skeletal muscles and nerves, cardiac dysrhythmias and arrest, and electric shock drowning. After the review of basic principles, a number of clinically relevant examples of accident mechanisms and their medical effects are discussed. Topics related to high-voltage burns include ground faults, ground potential gradient, step and touch potentials, arcs, and lightning. Results: The practicing physician will have a better understanding of electrical mechanisms of injury and their expected clinical effects. Conclusions: There are a variety of types of electrical contact, each with important characteristics. Understanding how electric current reaches and travels through the body can help the clinician understand how and why specific accidents occur and what medical and surgical problems may be expected. PMID:19907637

Enhancement of Electrical Conductivity in Multicomponent Nanocomposites.

NASA Astrophysics Data System (ADS)

Ni, Xiaojuan; Hui, Chao; Su, Ninghai; Liu, Feng

To date, very limited theoretical or numerical analyses have been carried out to understand the electrical percolation properties in multicomponent nanocomposite systems. In this work, a disk-stick percolation model was developed to investigate the electrical percolation behavior of an electrically insulating matrix reinforced with one-dimensional (1D) and two-dimensional (2D) conductors via Monte Carlo simulation. The effective electrical conductivity was evaluated through Kirchhoff's current law by transforming it into an equivalent resistor network. The percolation threshold, equivalent resistance and conductivity were obtained from the distribution of nodal voltages by solving a system of linear equations with Gaussian elimination method. The effects of size, aspect ratio, relative concentration and contact patterns of 1D/2D inclusions on conductivity performance were examined. Our model is able to predict the electrical percolation threshold and evaluate the conductivity for hybrid systems with multiple components. The results suggest that carbon-based nanocomposites can have a high potential for applications where favorable electrical properties and low specific weight are required. We acknowledge the financial support from DOE-BES (No. DE-FG02-04ER46148).

Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

2017-06-01

Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

Electrically Conductive Polyimide Films Containing Gold Surface

NASA Technical Reports Server (NTRS)

Caplan, Maggie L.; Stoakley, Diane M.; St. Clair, Anne K.

1994-01-01

Polyimide films exhibiting high thermo-oxidative stability and including electrically conductive surface layers containing gold made by casting process. Many variations of basic process conditions, ingredients, and sequence of operations possible, and not all resulting versions of process yield electrically conductive films. Gold-containing layer formed on film surface during cure. These metallic gold-containing polyimides used in film and coating applications requiring electrical conductivity, high reflectivity, exceptional thermal stability, and/or mechanical integrity. They also find commercial potential in areas ranging from thin films for satellite antennas to decorative coatings and packaging.

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

NASA Astrophysics Data System (ADS)

Amma, Shin-ichi; Tokumoto, Yuki; Edagawa, Keiichi; Shibata, Naoya; Mizoguchi, Teruyasu; Yamamoto, Takahisa; Ikuhara, Yuichi

2010-05-01

Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

NASA Astrophysics Data System (ADS)

Kudrawiec, R.; Nair, H. P.; Latkowska, M.; Misiewicz, J.; Bank, S. R.; Walukiewicz, W.

2012-12-01

Contactless electroreflectance (CER) has been applied to study the Fermi-level position on GaSb surface in n-type and p-type GaSb Van Hoof structures. CER resonances, followed by strong Franz-Keldysh oscillation of various periods, were clearly observed for two series of structures. This period was much wider (i.e., the built-in electric field was much larger) for n-type structures, indicating that the GaSb surface Fermi level pinning position is closer to the valence-band than the conduction-band. From analysis of the built-in electric fields in undoped GaSb layers, it was concluded that on GaSb surface the Fermi-level is located ˜0.2 eV above the valence band.

Thermoelectric Properties of n-type SnSe Single Crystal

NASA Astrophysics Data System (ADS)

Nguyen, Phuong; Duong, Anh Tuan; Rhim, S. H.; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Cho, Sunglae; Kwon, Suyong; Song, Jae Yong; Park, Hyun Min

Although thermoelectric materials are well known for their reliability and have been used for many years, even in the field of space engineering, their performance is quite small due to low energy conversion efficiency. Dimensionless figure of merit, ZT = S2. σ.T.κ-1 (where S, σ, T, κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity, respectively) is conveniently used to evaluate the conversion efficiency of a thermoelectric materials. Recently, the highest value of ZT to date has been reported for single crystal SnSe, ZT = 2.6 along the b axis of unit cell at 923 K. This temperature is rather high and the range of temperature for high reported ZT is quite narrow. Here we report an attempt to modify the thermoelectric properties of SnSe by using group V and VII as n-type dopant. A negative value of Seebeck coefficient was observed and the power factor reached a peak of 10 μW.K-2.cm-1 at around 600 K. The maximum n-type ZT was 0.57 at 650 K. We will discuss on dopant dependent thermoelectric properties of n-type SnSe single crystals.

Anomalous electrical conductivity of nanoscale colloidal suspensions.

PubMed

Chakraborty, Suman; Padhy, Sourav

2008-10-28

The electrical conductivity of colloidal suspensions containing nanoscale conducting particles is nontrivially related to the particle volume fraction and the electrical double layer thickness. Classical electrochemical models, however, tend to grossly overpredict the pertinent effective electrical conductivity values, as compared to those obtained under experimental conditions. We attempt to address this discrepancy by appealing to the complex interconnection between the aggregation kinetics of the nanoscale particles and the electrodynamics within the double layer. In particular, we model the consequent alterations in the effective electrophoretic mobility values of the suspension by addressing the fundamentals of agglomeration-deagglomeration mechanisms through the pertinent variations in the effective particulate dimensions, solid fractions, as well as the equivalent suspension viscosity. The consequent alterations in the electrical conductivity values provide a substantially improved prediction of the corresponding experimental findings and explain the apparent anomalous behavior predicted by the classical theoretical postulates.

Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

NASA Astrophysics Data System (ADS)

Hiramatsu, Hidenori; Ueda, Kazushige; Ohta, Hiromichi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2003-02-01

Epitaxial films of LaCuOS1-xSex (x=0-1) solid solution were grown on MgO (001) substrates and their electrical and optical properties were examined. Sharp emission due to room-temperature exciton with binding energy of ˜50 meV is observed for all x values. Hall mobility becomes large with an increase in the Se content and it reaches 8.0 cm2V-1s-1 in LaCuOSe, a comparable value to that of p-type GaN:Mg. Doping of Mg2+ ions at La3+ sites enhances a hole concentration up to 2.2×1020 cm-3, while maintaining the Hall mobility as large as 4.0 cm2V-1s-1. Consequently, a degenerate p-type electrical conduction with a conductivity of 140 S cm-1 was achieved.

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladysiewicz, M., E-mail: marta.gladysiewicz@pwr.edu.pl; Janicki, L.; Kudrawiec, R.

2015-12-28

Electric field distribution in N-polar GaN(channel)/AlGaN/GaN(buffer) heterostructures was studied theoretically by solving Schrodinger and Poisson equations in a self-consistent manner for various boundary conditions and comparing results of these calculations with experimental data, i.e., measurements of electric field in GaN(channel) and AlGaN layers by electromodulation spectroscopy. A very good agreement between theoretical calculations and experimental data has been found for the Fermi-level located at ∼0.3 eV below the conduction band at N-polar GaN surface. With this surface boundary condition, the electric field distribution and two dimensional electron gas concentration are determined for GaN(channel)/AlGaN/GaN(buffer) heterostructures of various thicknesses of GaN(channel) and AlGaNmore » layers.« less

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Adnane, Lhacene; Gokirmak, Ali; Silva, Helena

2012-09-01

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ˜650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.

Effects of Electric Discharge Plasma Treatment on the Thermal Conductivity of Polymer-Metal Nitride/Carbide Composites

NASA Astrophysics Data System (ADS)

Parali, Levent; Kurbanov, Mirza A.; Bayramov, Azad A.; Tatardar, Farida N.; Sultanakhmedova, Ramazanova I.; Xanlar, Huseynova Gulnara

2015-11-01

High-density polymer composites with semiconductor or dielectric fillers such as aluminum nitride (AIN), aluminum oxide (Al2O3), titanium carbide (TiC), titanium nitride (TiN), boron nitride (BN), silicon nitride (Si3N4), and titanium carbonitride (TiCN) were prepared by the hot pressing method. Each powder phase of the composites was exposed to an electric discharge plasma process before composite formation. The effects of the electric discharge plasma process and the filler content (volume fraction) on the thermal conductivity, volt-ampere characteristics, thermally stimulated depolarization current, as well as electrical and mechanical strength were investigated. The results of the study indicate that, with increasing filler volume fraction, the thermal conductivity of the samples also increased. Furthermore, the thermal conductivity, and electrophysical and mechanical properties of the high-density polyethylene + 70% BN composite modified using the electric discharge plasma showed improvement when compared with that without electric discharge plasma treatment.

Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing

NASA Astrophysics Data System (ADS)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2018-05-01

In this study, Ga0.6Sb0.4 thin films were grown on quartz and Ge(100) 1° off-axis substrates by RF magnetron sputtering at 500 °C. Ga0.6Sb0.4/Ge(100) shows n-type conductivity at room temperature (RT) and p-type conductivity at low temperatures, whereas undoped GaSb thin films exhibit p-type conductivity, irrespective of their growth methods and conditions. Their electrical properties were determined by rapid thermal annealing, which revealed that Ga0.6Sb0.4/Ge(100) contains two types of acceptors and two types of donors. The acceptors are considered to be GaSb and electrically active sites on dislocations originating at the Ga0.6Sb0.4/Ge(100) interface, while donors are believed to be Gai and electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface. In these acceptors and donors, the shallow donor concentration is higher than the shallow acceptor concentration, and the shallow donor level is deeper than the shallow acceptor level. Thus, we concluded that Ga0.6Sb0.4/Ge(100) shows n-type conductivity at RT due to electrically active sites originating at the Ga0.6Sb0.4/Ge(100) interface and native defects originating from excess Ga.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

46 CFR 108.187 - Ventilation for brush type electric motors in classified spaces.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Ventilation for brush type electric motors in classified... Ventilation for brush type electric motors in classified spaces. Ventilation for brush type electric motors in classified locations must meet N.F.P.A. 496-1974 “Standard for Purged and Pressurized Enclosures for...

Rapidly curable electrically conductive clear coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bowman, Mark P.; Anderson, Lawrence G.; Post, Gordon L.

2018-01-16

Rapidly curable electrically conductive clear coatings are applied to substrates. The electrically conductive clear coating includes to clear layer having a resinous binder with ultrafine non-stoichiometric tungsten oxide particles dispersed therein. The clear coating may be rapidly cured by subjecting the coating to infrared radiation that heats the tungsten oxide particles and surrounding resinous binder. Localized heating increases the temperature of the coating to thereby thermally cure the coating, while avoiding unwanted heating of the underlying substrate.

RF tumour ablation: computer simulation and mathematical modelling of the effects of electrical and thermal conductivity.

PubMed

Lobo, S M; Liu, Z-J; Yu, N C; Humphries, S; Ahmed, M; Cosman, E R; Lenkinski, R E; Goldberg, W; Goldberg, S N

2005-05-01

This study determined the effects of thermal conductivity on RF ablation tissue heating using mathematical modelling and computer simulations of RF heating coupled to thermal transport. Computer simulation of the Bio-Heat equation coupled with temperature-dependent solutions for RF electric fields (ETherm) was used to generate temperature profiles 2 cm away from a 3 cm internally-cooled electrode. Multiple conditions of clinically relevant electrical conductivities (0.07-12 S m-1) and 'tumour' radius (5-30 mm) at a given background electrical conductivity (0.12 S m-1) were studied. Temperature response surfaces were plotted for six thermal conductivities, ranging from 0.3-2 W m-1 degrees C (the range of anticipated clinical and experimental systems). A temperature response surface was obtained for each thermal conductivity at 25 electrical conductivities and 17 radii (n=425 temperature data points). The simulated temperature response was fit to a mathematical model derived from prior phantom data. This mathematical model is of the form (T=a+bRc exp(dR) s(f) exp(g)(s)) for RF generator-energy dependent situations and (T=h+k exp(mR)+n?exp(p)(s)) for RF generator-current limited situations, where T is the temperature (degrees C) 2 cm from the electrode and a, b, c, d, f, g, h, k, m, n and p are fitting parameters. For each of the thermal conductivity temperature profiles generated, the mathematical model fit the response surface to an r2 of 0.97-0.99. Parameters a, b, c, d, f, k and m were highly correlated to thermal conductivity (r2=0.96-0.99). The monotonic progression of fitting parameters permitted their mathematical expression using simple functions. Additionally, the effect of thermal conductivity simplified the above equation to the extent that g, h, n and p were found to be invariant. Thus, representation of the temperature response surface could be accurately expressed as a function of electrical conductivity, radius and thermal conductivity. As a result

High electric field conduction in low-alkali boroaluminosilicate glass

NASA Astrophysics Data System (ADS)

Dash, Priyanka; Yuan, Mengxue; Gao, Jun; Furman, Eugene; Lanagan, Michael T.

2018-02-01

Electrical conduction in silica-based glasses under a low electric field is dominated by high mobility ions such as sodium, and there is a transition from ionic transport to electronic transport as the electric field exceeds 108 V/m at low temperatures. Electrical conduction under a high electric field was investigated in thin low-alkali boroaluminosilicate glass samples, showing nonlinear conduction with the current density scaling approximately with E1/2, where E is the electric field. In addition, thermally stimulated depolarization current (TSDC) characterization was carried out on room-temperature electrically poled glass samples, and an anomalous discharging current flowing in the same direction as the charging current was observed. High electric field conduction and TSDC results led to the conclusion that Poole-Frenkel based electronic transport occurs in the mobile-cation-depleted region adjacent to the anode, and accounts for the observed anomalous current.

Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

NASA Astrophysics Data System (ADS)

Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

2007-01-01

We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

Highly Conductive Graphene/Ag Hybrid Fibers for Flexible Fiber-Type Transistors.

PubMed

Yoon, Sang Su; Lee, Kang Eun; Cha, Hwa-Jin; Seong, Dong Gi; Um, Moon-Kwang; Byun, Joon-Hyung; Oh, Youngseok; Oh, Joon Hak; Lee, Wonoh; Lee, Jea Uk

2015-11-09

Mechanically robust, flexible, and electrically conductive textiles are highly suitable for use in wearable electronic applications. In this study, highly conductive and flexible graphene/Ag hybrid fibers were prepared and used as electrodes for planar and fiber-type transistors. The graphene/Ag hybrid fibers were fabricated by the wet-spinning/drawing of giant graphene oxide and subsequent functionalization with Ag nanoparticles. The graphene/Ag hybrid fibers exhibited record-high electrical conductivity of up to 15,800 S cm(-1). As the graphene/Ag hybrid fibers can be easily cut and placed onto flexible substrates by simply gluing or stitching, ion gel-gated planar transistors were fabricated by using the hybrid fibers as source, drain, and gate electrodes. Finally, fiber-type transistors were constructed by embedding the graphene/Ag hybrid fiber electrodes onto conventional polyurethane monofilaments, which exhibited excellent flexibility (highly bendable and rollable properties), high electrical performance (μh = 15.6 cm(2) V(-1) s(-1), Ion/Ioff > 10(4)), and outstanding device performance stability (stable after 1,000 cycles of bending tests and being exposed for 30 days to ambient conditions). We believe that our simple methods for the fabrication of graphene/Ag hybrid fiber electrodes for use in fiber-type transistors can potentially be applied to the development all-organic wearable devices.

Highly Conductive Graphene/Ag Hybrid Fibers for Flexible Fiber-Type Transistors

PubMed Central

Yoon, Sang Su; Lee, Kang Eun; Cha, Hwa-Jin; Seong, Dong Gi; Um, Moon-Kwang; Byun, Joon-Hyung; Oh, Youngseok; Oh, Joon Hak; Lee, Wonoh; Lee, Jea Uk

2015-01-01

Mechanically robust, flexible, and electrically conductive textiles are highly suitable for use in wearable electronic applications. In this study, highly conductive and flexible graphene/Ag hybrid fibers were prepared and used as electrodes for planar and fiber-type transistors. The graphene/Ag hybrid fibers were fabricated by the wet-spinning/drawing of giant graphene oxide and subsequent functionalization with Ag nanoparticles. The graphene/Ag hybrid fibers exhibited record-high electrical conductivity of up to 15,800 S cm−1. As the graphene/Ag hybrid fibers can be easily cut and placed onto flexible substrates by simply gluing or stitching, ion gel-gated planar transistors were fabricated by using the hybrid fibers as source, drain, and gate electrodes. Finally, fiber-type transistors were constructed by embedding the graphene/Ag hybrid fiber electrodes onto conventional polyurethane monofilaments, which exhibited excellent flexibility (highly bendable and rollable properties), high electrical performance (μh = 15.6 cm2 V−1 s−1, Ion/Ioff > 104), and outstanding device performance stability (stable after 1,000 cycles of bending tests and being exposed for 30 days to ambient conditions). We believe that our simple methods for the fabrication of graphene/Ag hybrid fiber electrodes for use in fiber-type transistors can potentially be applied to the development all-organic wearable devices. PMID:26549711

Electric-field control of conductance in metal quantum point contacts by electric-double-layer gating

NASA Astrophysics Data System (ADS)

Shibata, K.; Yoshida, K.; Daiguji, K.; Sato, H.; , T., Ii; Hirakawa, K.

2017-10-01

An electric-field control of quantized conductance in metal (gold) quantum point contacts (QPCs) is demonstrated by adopting a liquid-gated electric-double-layer (EDL) transistor geometry. Atomic-scale gold QPCs were fabricated by applying the feedback-controlled electrical break junction method to the gold nanojunction. The electric conductance in gold QPCs shows quantized conductance plateaus and step-wise increase/decrease by the conductance quantum, G0 = 2e2/h, as EDL-gate voltage is swept, demonstrating a modulation of the conductance of gold QPCs by EDL gating. The electric-field control of conductance in metal QPCs may open a way for their application to local charge sensing at room temperature.

Fabrication and characterization of novel transparent conducting oxide N-CNT doped ZnO for photovoltaic applications

NASA Astrophysics Data System (ADS)

Benyounes, Anas; Abbas, Naseem; Hammi, Maryama; Ziat, Younes; Slassi, Amine; Zahra, Nida

2018-02-01

The present research reports on the electrical and optical properties of N-CNT doped with ZnO, which is considered as wurtzite transparent and conducting oxide semiconductor structure. The thin films of N-doped carbon nanotubes/ZnO were prepared using sol-gel method, then we carried out investigations in optical and electrical point of view to extract their usefulness in photovoltaic applications. For this purpose, ZnO films were doped by several ratios of carbon nanotubes and N-doped carbon nanotubes. The electrical studies were performed over these two kinds of doped ZnO films, the electrical conductivity has found to be more important for ZnO films filled with N-CNTs. This finding is pretty explained by the electronic conduction hold by nitrogen as charge carriers within carbon nanotubes.

Effect of alpha-particle irradiation on the electrical properties of n-type Ge

NASA Astrophysics Data System (ADS)

Roro, K. T.; Janse van Rensburg, P. J.; Auret, F. D.; Coelho, S.

2009-12-01

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at EC-0.38, EC-0.21, EC-0.20, EC-0.15, and EC-0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.

Thermal and electrical contact conductance studies

NASA Technical Reports Server (NTRS)

Vansciver, S. W.; Nilles, M.

1985-01-01

Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

An analysis of electrical conductivity model in saturated porous media

NASA Astrophysics Data System (ADS)

Cai, J.; Wei, W.; Qin, X.; Hu, X.

2017-12-01

Electrical conductivity of saturated porous media has numerous applications in many fields. In recent years, the number of theoretical methods to model electrical conductivity of complex porous media has dramatically increased. Nevertheless, the process of modeling the spatial conductivity distributed function continues to present challenges when these models used in reservoirs, particularly in porous media with strongly heterogeneous pore-space distributions. Many experiments show a more complex distribution of electrical conductivity data than the predictions derived from the experiential model. Studies have observed anomalously-high electrical conductivity of some low-porosity (tight) formations compared to more- porous reservoir rocks, which indicates current flow in porous media is complex and difficult to predict. Moreover, the change of electrical conductivity depends not only on the pore volume fraction but also on several geometric properties of the more extensive pore network, including pore interconnection and tortuosity. In our understanding of electrical conductivity models in porous media, we study the applicability of several well-known methods/theories to electrical characteristics of porous rocks as a function of pore volume, tortuosity and interconnection, to estimate electrical conductivity based on the micro-geometrical properties of rocks. We analyze the state of the art of scientific knowledge and practice for modeling porous structural systems, with the purpose of identifying current limitations and defining a blueprint for future modeling advances. We compare conceptual descriptions of electrical current flow processes in pore space considering several distinct modeling approaches. Approaches to obtaining more reasonable electrical conductivity models are discussed. Experiments suggest more complex relationships between electrical conductivity and porosity than experiential models, particularly in low-porosity formations. However, the

New method for solving inductive electric fields in the non-uniformly conducting ionosphere

NASA Astrophysics Data System (ADS)

Vanhamäki, H.; Amm, O.; Viljanen, A.

2006-10-01

We present a new calculation method for solving inductive electric fields in the ionosphere. The time series of the potential part of the ionospheric electric field, together with the Hall and Pedersen conductances serves as the input to this method. The output is the time series of the induced rotational part of the ionospheric electric field. The calculation method works in the time-domain and can be used with non-uniform, time-dependent conductances. In addition, no particular symmetry requirements are imposed on the input potential electric field. The presented method makes use of special non-local vector basis functions called the Cartesian Elementary Current Systems (CECS). This vector basis offers a convenient way of representing curl-free and divergence-free parts of 2-dimensional vector fields and makes it possible to solve the induction problem using simple linear algebra. The new calculation method is validated by comparing it with previously published results for Alfvén wave reflection from a uniformly conducting ionosphere.

Electrical conduction of a XLPE nanocomposite

NASA Astrophysics Data System (ADS)

Park, Yong-Jun; Sim, Jae-Yong; Lim, Kee-Joe; Nam, Jin-Ho; Park, Wan-Gi

2014-07-01

The resistivity, breakdown strength, and formation of space charges are very important factors for insulation design of HVDC cable. It is known that a nano-sized metal-oxide inorganic filler reduces the formation of space charges in the polymer nanocomposite. Electrical conduction of cross-linked polyethylene(XLPE) nanocomposite insulating material is investigated in this paper. The conduction currents of two kinds of XLPE nanocomposites and XLPE without nano-filler were measured at temperature of 303 ~ 363 K under the applied electric fields of 10 ~ 50 kV/mm. The current of the nanocomposite specimen is smaller than that of XLPE specimen without nano-filler. The conduction mechanism may be explained in terms of Schottky emission and multi-core model.

Electrically conductive doped block copolymer of polyacetylene and polyisoprene. [Soluble in organic solvents

DOEpatents

Aldissi, M.

1984-06-27

An electrically conductive block copolymer of polyisoprene and polyacetylene and a method of making the same are disclosed. The polymer is prepared by first polymerizing isoprene with n-butyllithium in a toluene solution to form an active isoprenyllithium polymer. The active polymer is reacted with an equimolar amount of titanium butoxide and subsequently exposed to gaseous acetylene. A block copolymer of polyisoprene and polyacetylene is formed. The copolymer is soluble in common solvents and may be doped with I/sub 2/ to give it an electrical conductivity in the metallic regime.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Photovoltaic device having light transmitting electrically conductive stacked films

DOEpatents

Weber, Michael F.; Tran, Nang T.; Jeffrey, Frank R.; Gilbert, James R.; Aspen, Frank E.

1990-07-10

A light transmitting electrically conductive stacked film, useful as a light transmitting electrode, including a first light transmitting electrically conductive layer, having a first optical thickness, a second light transmitting layer, having a second optical thickness different from the optical thickness of the first layer, and an electrically conductive metallic layer interposed between and in initimate contact with the first and second layers.

Electrically conducting polymers for aerospace applications

NASA Technical Reports Server (NTRS)

Meador, Mary Ann B.; Gaier, James R.; Good, Brian S.; Sharp, G. R.; Meador, Michael A.

1991-01-01

Current research on electrically conducting polymers from 1974 to the present is reviewed focusing on the development of materials for aeronautic and space applications. Problems discussed include extended pi-systems, pyrolytic polymers, charge-transfer systems, conductive matrix resins for composite materials, and prospects for the use of conducting polymers in space photovoltaics.

Electrically conductive polymer concrete coatings

DOEpatents

Fontana, J.J.; Elling, D.; Reams, W.

1988-05-26

A sprayable electrically conductive polymer concrete coating for vertical and overhead applications is described. The coating is permeable yet has low electrical resistivity (<10 ohm-cm), good bond strength to concrete substrates, and good weatherability. A preferred formulation contains about 60 wt% calcined coke breeze, 40 wt% vinyl ester resin with 3.5 wt% modified bentonite clay. Such formulations apply evenly and provide enough rigidity for vertical or overhead structures so there is no drip or sag. 4 tabs.

Electrically conductive polymer concrete coatings

DOEpatents

Fontana, J.J.; Elling, D.; Reams, W.

1990-03-13

A sprayable electrically conductive polymer concrete coating for vertical d overhead applications is described. The coating is permeable yet has low electrical resistivity (<10 ohm-cm), good bond strength to concrete substrates, and good weatherability. A preferred formulation contains about 60 wt % calcined coke breeze, 40 wt % vinyl ester with 3.5 wt % modified bentonite clay. Such formulations apply evenly and provide enough rigidity for vertical or overhead structures so there is no drip or sag.

Electrically conductive polymer concrete coatings

DOEpatents

Fontana, Jack J.; Elling, David; Reams, Walter

1990-01-01

A sprayable electrically conductive polymer concrete coating for vertical d overhead applications is described. The coating is permeable yet has low electrical resistivity (<10 ohm-cm), good bond strength to concrete substrates, and good weatherability. A preferred formulation contains about 60 wt % calcined coke breeze, 40 wt % vinyl ester with 3.5 wt % modified bentonite clay. Such formulations apply evenly and provide enough rigidity for vertical or overhead structures so there is no drip or sag.

Influence Of The Redox State On The Electrical Conductivity Of Basaltic Melts

NASA Astrophysics Data System (ADS)

Pommier, A.; Gaillard, F.; Pichavant, M.

2007-12-01

The electrical conductivity is an efficient probe of mass transfer processes within silicate melts and magmas. Previous studies have established that the electrical conductivity is sensitive to parameters such as temperature, melt composition and pressure. In contrast to what is known for Fe-bearing minerals, little attention has been given to the influence of redox state on the electrical conductivity of melts. Experiments were performed on tephritic and basaltic compositions respectively from Mt. Vesuvius and Pu'u 'O'o. Measurements were carried out on cylindrical glass samples (OD: 6 mm, ID: 1 mm, L: 8 mm) drilled from glass obtained by fusing each rock sample at 1400°C in air. A two-electrode configuration was adopted, with the electrical impedance being radially measured. A Pt wire was used as the internal electrode whereas a Pt tube served as the external electrode. Experiments were conducted at 1 atm in a vertical furnace between 1200°C and 1300°C, both in air and in a CO-CO2 atmosphere at a fO2 corresponding to NNO+1. Both reduction and oxidation experiments were performed. In reduction experiments (pure CO2 then CO-CO2 gas mixture), electrical conductivities progressively increase with time. The reverse is observed in oxidation experiments (CO-CO2 gas mixture then pure CO2). These variations of electrical conductivities are correlated with modifications of the Fe2+/Fe3+ ratio in the melt, and are consistent with the respective structural roles of Fe2+ and Fe3+. In both types of experiments, a minimum of about 400 mn is necessary before a plateau is reached, interpreted to reflect the kinetics of attainment of the equilibrium Fe2+/Fe3+ ratio in the melt. Differences between plateau and initial values are typically of a few ohms, much higher than the sensitivity of our measurements (better than 0.1 ohm). When increasing temperature, the time required for reaching plateau values decreases. At NNO+1, the electrical activation energy (Ea) was determined for

Simultaneous measurement of electrical and thermal conductivities of suspended monolayer graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haidong; Kurata, Kosaku; Fukunaga, Takanobu

2016-06-28

We measured both in-plane electrical and thermal properties of the same suspended monolayer graphene using a novel T-type sensor method. At room temperature, the values are about 240 000 Ω{sup −1} m{sup −1} and 2100 W m{sup −1} K{sup −1} for the electrical and thermal conductivities, respectively. Based on the Wiedemann-Franz law, the electrons have negligible contribution to the thermal conductivity of graphene, while the in-plane LA and TA modes phonons are the dominant heat carriers. In monolayer graphene, the absence of layer-layer and layer-substrate interactions enhances the contribution of long wave-length phonons to the heat transport and increases the thermal conductivity accordingly. The reportedmore » method and experimental data of suspended monolayer graphene are useful for understanding the basic physics and designing the future graphene electronic devices.« less

Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

NASA Astrophysics Data System (ADS)

Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

2018-04-01

We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

Microstructural Characterization of Base Metal Alloys with Conductive Native Oxides for Electrical Contact Applications

NASA Astrophysics Data System (ADS)

Senturk, Bilge Seda

Metallic contacts are a ubiquitous method of connecting electrical and electronic components/systems. These contacts are usually fabricated from base metals because they are inexpensive, have high bulk electrical conductivities and exhibit excellent formability. Unfortunately, such base metals oxidize in air under ambient conditions, and the characteristics of the native oxide scales leads to contact resistances orders of magnitude higher than those for mating bare metal surface. This is a critical technological issue since the development of unacceptably high contact resistances over time is now by far the most common cause of failure in electrical/electronic devices and systems. To overcome these problems, several distinct approaches are developed for alloying base metals to promote the formation of self-healing inherently conductive native oxide scales. The objective of this dissertation study is to demonstrate the viability of these approaches through analyzing the data from Cu-9La (at%) and Fe-V binary alloy systems. The Cu-9 La alloy structure consists of eutectic colonies tens of microns in diameter wherein a rod-like Cu phase lies within a Cu6La matrix phase. The thin oxide scale formed on the Cu phase was found to be Cu2O as expected while the thicker oxide scale formed on the Cu6La phase was found to be a polycrystalline La-rich Cu2O. The enhanced electrical conductivity in the native oxide scale of the Cu-9La alloy arises from heavy n-type doping of the Cu2O lattice by La3+. The Fe-V alloy structures consist of a mixture of large elongated and equiaxed grains. A thin polycrystalline Fe3O4 oxide scale formed on all of the Fe-V alloys. The electrical conductivities of the oxide scales formed on the Fe-V alloys are higher than that formed on pure Fe. It is inferred that this enhanced conductivity arises from doping of the magnetite with V+4 which promotes electron-polaron hopping. Thus, it has been demonstrated that even in simple binary alloy systems one

Electrochemical Device Comprising an Electrically-Conductive, Selectively-Permeable Membrane

NASA Technical Reports Server (NTRS)

Laicer, Castro S. T. (Inventor); Mittelsteadt, Cortney K. (Inventor); Harrison, Katherine E. (Inventor); McPheeters, Bryn M. (Inventor)

2017-01-01

An electrochemical device, such as a fuel cell or an electrolyzer. In one embodiment, the electrochemical device includes a membrane electrode assembly (MEA), an anodic gas diffusion medium in contact with the anode of the MEA, a cathodic gas diffusion medium in contact with the cathode, a first bipolar plate in contact with the anodic gas diffusion medium, and a second bipolar plate in contact with the cathodic gas diffusion medium. Each of the bipolar plates includes an electrically-conductive, non-porous, liquid-permeable, substantially gas-impermeable membrane in contact with its respective gas diffusion medium, the membrane including a solid polymer electrolyte and a non-particulate, electrically-conductive material, such as carbon nanotubes, carbon nanofibers, and/or metal nanowires. In addition, each bipolar plate also includes an electrically-conductive fluid chamber in contact with the electrically-conductive, selectively-permeable membrane and further includes a non-porous and electrically-conductive plate in contact with the fluid chamber.

Electrically-conductive proppant and methods for making and using same

DOEpatents

Cannan, Chad; Roper, Todd; Savoy, Steve; Mitchell, Daniel R.

2016-09-06

Electrically-conductive sintered, substantially round and spherical particles and methods for producing such electrically-conductive sintered, substantially round and spherical particles from an alumina-containing raw material. Methods for using such electrically-conductive sintered, substantially round and spherical particles in hydraulic fracturing operations.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Increased p-type conductivity in GaN{sub x}Sb{sub 1−x}, experimental and theoretical aspects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Makkonen, I.; Slotte, J.

2015-08-28

The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaN{sub x}Sb{sub 1−x} layers grown by molecular beam epitaxy, and the results have been compared with calculated first-principle results corresponding to different defect structures. From the calculated data, binding energies for nitrogen-related defects have also been estimated. Based on the results, the increase in residual hole concentration is explained by an increase in the fraction of negative acceptor-type defects in the material. As the band gapmore » decreases with increasing N concentration, the ionization levels of the defects move closer to the valence band. Ga vacancy-type defects are found to act as positron trapping defects in the material, and the ratio of Ga vacancy-type defects to Ga antisites is found to be higher than that of the p-type bulk GaSb substrate. Beside Ga vacancies, the calculated results imply that complexes of a Ga vacancy and nitrogen could be present in the material.« less

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2017-11-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

NASA Astrophysics Data System (ADS)

Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

2018-06-01

Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

Analysis of the conduction mechanism and dielectric properties of N, N', N" tris(4-methylphenyl)phosphoric triamide

NASA Astrophysics Data System (ADS)

Ali, H. A. M.

2016-03-01

The structure for the powder of N,N', N"-tris(4-methylphenyl)phosphoric triamide, TMP-TA, was characterized using X-ray diffraction (XRD) and differential thermal analysis (DTA) techniques. The ac conductivity and dielectric properties were measured in the frequency range of 42-105 Hz for the bulk TMP-TA in a pellet form at different temperatures. The frequency dependence of ac conductivity was expressed by a Jonscher's universal power law. The frequency exponent (s) was determined from the fitting of experimental data of ac conductivity. The correlated barrier hopping (CBH) model was found to be responsible for the ac conduction mechanism in TMP-TA. The activation energy was calculated from the temperature dependence of ac conductivity. The values of the density of states at the Fermi level were determined for different frequencies. The components of the electric modulus (M' and M") were calculated and used to estimate the relaxation time.

A transient hot-wire instrument for thermal conductivity measurements in electrically conducting liquids at elevated temperatures

NASA Astrophysics Data System (ADS)

Alloush, A.; Gosney, W. B.; Wakeham, W. A.

1982-09-01

This paper describes a novel type of transient hot-wire cell for thermal conductivity measurements on electrically conducting liquids. A tantalum wire of 25 μm. diameter is used as the sensing element in the cell, and it is insulated from the conducting liquids by an anodic film of tantalum pentoxide, 70 nm thick. The cell is suitable for measurements on conducting liquids at elevated temperatures. The results of test measurements on liquid water at its saturation vapor pressure are reported in order to confirm the correct operation of the thermal conductivity cell. The data, which have an estimated accuracy of ±3%, depart by less than ±1.8% from the correlation proposed by the International Association for the Properties of Steam. Results are also presented for concentrated aqueous solutions of lithium bromide, which are frequently used in absorption refrigerator cycles.

Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuks, D.; Komisarchik, G.; Kaller, M.

2016-08-15

Doping of materials for thermoelectric applications is widely used nowadays to control the type of conductivity. We report the results of ab-initio calculations aimed at developing the consistent scheme for determining the role of impurities that may change the type of conductivity in two attractive thermoelectric classes of materials. It is demonstrated that alloying of TiNiSn with Cu makes the material of n-type, and alloying with Fe leads to p-type conductivity. Similar calculations for PbTe with small amount of Na substituting for Pb leads to p-type conductivity, while Cl substituting for Te makes PbTe an n-type material. It is shownmore » also that for nano-grained materials the n-type conductivity should be observed. The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed. - Highlights: • Bulk and nano-grained TE materials were analyzed by DFT. • The electronic effects on both PbTe and TiNiSn were demonstrated. • The role of impurities on the conductivity type was analyzed. • Interfacial states in nano-grained PbTe affect the conductivity type.« less

Electrical conductivity of metal powders under pressure

NASA Astrophysics Data System (ADS)

Montes, J. M.; Cuevas, F. G.; Cintas, J.; Urban, P.

2011-12-01

A model for calculating the electrical conductivity of a compressed powder mass consisting of oxide-coated metal particles has been derived. A theoretical tool previously developed by the authors, the so-called `equivalent simple cubic system', was used in the model deduction. This tool is based on relating the actual powder system to an equivalent one consisting of deforming spheres packed in a simple cubic lattice, which is much easier to examine. The proposed model relates the effective electrical conductivity of the powder mass under compression to its level of porosity. Other physically measurable parameters in the model are the conductivities of the metal and oxide constituting the powder particles, their radii, the mean thickness of the oxide layer and the tap porosity of the powder. Two additional parameters controlling the effect of the descaling of the particle oxide layer were empirically introduced. The proposed model was experimentally verified by measurements of the electrical conductivity of aluminium, bronze, iron, nickel and titanium powders under pressure. The consistency between theoretical predictions and experimental results was reasonably good in all cases.

Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

NASA Astrophysics Data System (ADS)

Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

2014-10-01

Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

Extraordinary Off-Stoichiometric Bismuth Telluride for Enhanced n-Type Thermoelectric Power Factor.

PubMed

Park, Kunsu; Ahn, Kyunghan; Cha, Joonil; Lee, Sanghwa; Chae, Sue In; Cho, Sung-Pyo; Ryee, Siheon; Im, Jino; Lee, Jaeki; Park, Su-Dong; Han, Myung Joon; Chung, In; Hyeon, Taeghwan

2016-11-02

Thermoelectrics directly converts waste heat into electricity and is considered a promising means of sustainable energy generation. While most of the recent advances in the enhancement of the thermoelectric figure of merit (ZT) resulted from a decrease in lattice thermal conductivity by nanostructuring, there have been very few attempts to enhance electrical transport properties, i.e., the power factor. Here we use nanochemistry to stabilize bulk bismuth telluride (Bi 2 Te 3 ) that violates phase equilibrium, namely, phase-pure n-type K 0.06 Bi 2 Te 3.18 . Incorporated potassium and tellurium in Bi 2 Te 3 far exceed their solubility limit, inducing simultaneous increase in the electrical conductivity and the Seebeck coefficient along with decrease in the thermal conductivity. Consequently, a high power factor of ∼43 μW cm -1 K -2 and a high ZT > 1.1 at 323 K are achieved. Our current synthetic method can be used to produce a new family of materials with novel physical and chemical characteristics for various applications.

Making Complex Electrically Conductive Patterns on Cloth

NASA Technical Reports Server (NTRS)

Chu, Andrew; Fink, Patrick W.; Dobbins, Justin A.; Lin, Greg Y.; Scully, Robert C.; Trevino, Robert

2008-01-01

A method for automated fabrication of flexible, electrically conductive patterns on cloth substrates has been demonstrated. Products developed using this method, or related prior methods, are instances of a technology known as 'e-textiles,' in which electrically conductive patterns ar formed in, and on, textiles. For many applications, including high-speed digital circuits, antennas, and radio frequency (RF) circuits, an e-textile method should be capable of providing high surface conductivity, tight tolerances for control of characteristic impedances, and geometrically complex conductive patterns. Unlike prior methods, the present method satisfies all three of these criteria. Typical patterns can include such circuit structures as RF transmission lines, antennas, filters, and other conductive patterns equivalent to those of conventional printed circuits. The present method overcomes the limitations of the prior methods for forming the equivalent of printed circuits on cloth. A typical fabrication process according to the present method involves selecting the appropriate conductive and non-conductive fabric layers to build the e-textile circuit. The present method uses commercially available woven conductive cloth with established surface conductivity specifications. Dielectric constant, loss tangent, and thickness are some of the parameters to be considered for the non-conductive fabric layers. The circuit design of the conductive woven fabric is secured onto a non-conductive fabric layer using sewing, embroidery, and/or adhesive means. The portion of the conductive fabric that is not part of the circuit is next cut from the desired circuit using an automated machine such as a printed-circuit-board milling machine or a laser cutting machine. Fiducials can be used to align the circuit and the cutting machine. Multilayer circuits can be built starting with the inner layer and using conductive thread to make electrical connections between layers.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Potassium-doped n-type bilayer graphene

NASA Astrophysics Data System (ADS)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Electrical conductivity and magnetic susceptibility of rutile type CrVNbO/sub 6/, FeVNbO/sub 6/ and NiV/sub 2/Nb/sub 2/O/sub 10/

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenblatt, M.; McCarroll, W.H.; Nair, K.R.

1984-06-01

Electric conductivity (77-300K) and magnetic susceptibility (4.2-300K) of rutile type polycrystalline samples of CrVNbO/sub 6/, FeVNbO/sub 6/ and NiV/sub 2/Nb/sub 2/O/sub 10/ are reported. All three compounds are n-type semiconductors with room-temperature resistivities of the order of 10/sup 2/-10/sup 3/ ohm-cm. CrVNbO/sub 6/ shows ferromagnetic coupling in the high-temperature region and orders antiferromagnetically below 10K. FeVNbO/sub 6/ transforms to a spin glass state below 20K. NiV/sub 2/Nb/sub 2/O/sub 10/ shows evidence of weak antiferromagnetic interactions. The transport properties of the compounds are discussed in terms of structural properties and unpaired d electrons present on the respective transition metal ions.

Synthesis and applications of electrically conducting polymer nanocomposites

NASA Astrophysics Data System (ADS)

Ku, Bon-Cheol

This research focuses on the synthesis and applications of electrically conducting polymer nanocomposites through molecular self-assembly. Two different classes of polymers, polyaniline (PANI) and polyacetylenes have been synthesized by biomimetic catalysis and spontaneous polymerization method. For gas barrier materials, commercially available polymers, poly(allylamine hydrochloride) (PAH) and poly (acrylic acid) (PAA), have also been used and thermally cross-linked. The morphological, optical and electrical properties of amphiphilic polyacetylenes have been studied. Furthermore, barrier properties, permselectivity, pervaporation properties of polyacetylenes/aluminosilicate nanocomposites have been investigated. For processability and electrical properties of carbon nanotube and conducting polymers, substituted ionic polyacetylenes (SIPA) have been covalently incorporated onto single-walled carbon nanotubes (SWNT) using the "grafting-from" technique. In the first study, a nanocomposite film catalyst has been prepared by electrostatic layer-by-layer (ELBL) self-assembly of a polyelectrolyte and a biomimetic catalyst for synthesis of polyaniline. Poly(dimethyl diallylammonium chloride) (PDAC) and hematin have been used as polycation and counter anions, respectively. The absorption spectra by UV-vis-NIR spectroscopy showed that conductive form polyaniline was formed not only as a coating on the surface of the ELBL composites but was also formed in solution. Furthermore, it was found that the reaction rate was affected by pH and concentration of hematin in the multilayers. The feasibility of controlled desorption of hematin molecules from the LBL assembly was explored and demonstrated by changing the pH and hematin concentration. The polymerization rate of aniline in solution was enhanced with decreasing pH of the solutions due to increased desorption of hematin nanoparticles from the multilayers. These ELBL hematin assemblies demonstrated both a way to functionalize

Electrically conductive resinous bond and method of manufacture

DOEpatents

Snowden, T.M. Jr.; Wells, B.J.

1985-01-01

A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40 to 365/sup 0/C to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

Electrically conductive resinous bond and method of manufacture

DOEpatents

Snowden, Jr., Thomas M.; Wells, Barbara J.

1987-01-01

A method of bonding elements together with a bond of high strength and good electrical conductivity which comprises: applying an unfilled polyimide resin between surfaces of the elements to be bonded, heat treating said unfilled polyimide resin in stages between a temperature range of about 40.degree. to 365.degree. C. to form a strong adhesive bond between said elements, applying a metal-filled polyimide resin overcoat between said elements so as to provide electrical connection therebetween, and heat treating said metal-filled polyimide resin with substantially the same temperature profile as the unfilled polyimide resin. The present invention is also concerned with an adhesive, resilient, substantially void free bonding combination for providing a high strength, electrically conductive adhesive attachment between electrically conductive elements which comprises a major amount of an unfilled polyimide resin and a minor amount of a metal-filled polyimide resin.

Electrical isolation of component cells in monolithically interconnected modules

DOEpatents

Wanlass, Mark W.

2001-01-01

A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.

Electrical conductivity of Icelandic deep geothermal reservoirs: insight from HT-HP laboratory experiments

NASA Astrophysics Data System (ADS)

Nono, Franck; Gibert, Benoit; Loggia, Didier; Parat, Fleurice; Azais, Pierre; Cichy, Sarah

2016-04-01

temperature cycles have been performed systematically. Dry electrical conductivity measurements show for most of the samples irreversible changes when temperatures exceed 500°C. These changes are interpreted as destabilization/dehydration of alteration minerals that could lead to the presence of a conductive fluid phase in the samples. Very low and high salinity (NaCl) electrical conductivity measurements have been performed as a function of temperature. At supercritical conditions, electrical conductivity at low salinity is not pore pressure dependent and surface conduction is preponderant. At saturated conditions, the rock's electrical conductivity increases linearly (as a function of T-1) until 350°C. Above 350°C, the conductivity decreases. All rock types exhibit the same increasing rate. This work was funded by the of the EC project IMAGE (Integrated Methods for Advanced Geothermal Exploration, grant agreement No. 608553).

N-type Doped PbTe and PbSe Alloys for Thermoelectric Applications

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey (Inventor); LaLonde, Aaron (Inventor); Pei, Yanzhong (Inventor); Wang, Heng (Inventor)

2014-01-01

The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe.sub.1-xI.sub.x with carrier concentrations ranging from 5.8.times.10.sup.18-1.4.times.10.sup.20 cm.sup.-3.

Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

NASA Astrophysics Data System (ADS)

Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

2017-06-01

Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

Electrical conductivity of the Cascadia subduction zone and implications for the plate interface

NASA Astrophysics Data System (ADS)

Livelybrooks, D.; Bedrosian, P.; Egbert, G. D.; Key, K.; Schultz, A.; Parris, B. A.; Yang, B.; Bowles-martinez, E.

2016-12-01

The Magnetotelluric Observations of Cascadia using a Huge Array (MOCHA) experiment resulted in the collection of 146 amphibious, long-period magnetotelluric stations acquired between 2012 and 2014. These data, supplemented with the previously-acquired CAFÉ, EMSLAB, SWORMT and EarthScope (MT) Transportable Array stations, have been interpreted to provide electrical conductivity models of Cascadia spanning from the trench eastward through the Cascades, and extending to about 150km depth. We have a particular interest in understanding the roles electrically-conductive, aqueous fluids play in Cascadia subduction processes at or near the plate interface, thus inversions of data are predisposed to accommodate an initially-resistive (McCrory et al. 2014) slab. Beginning at the mantle wedge corner, 3-D inversions reveal significant, latitudinal variation in the conductivity, with enhanced conductivity at 47oN and south at 42oN. Two-dimensional inversions at 44.5oN allowing for a step discontinuity at the Moho give two distinct zones of conductance, one at the MWC tip (c.f. Furukowa, 2009) and another further down-dip, with a conductivity `plume' directed eastwards. At depths of between 20-25km we image a latitudinally-discontinuous resistive lower crust immediately overlying resistive subducted slab. This implies a lack of free fluids near the plate interface. Krogstad et al. (2016) have analyzed historic uplift data and can model the presence of an inboard `secondary locked zone' near 44.5oN. One explanation for both observations—a down-dip, `pinned interface' that is shielding the traditionally-modeled off-shore locked zone from stress accumulation, would explain the paucity of seismicity observed off the north-central Oregon coast during the four-year Cascadia Initiative. At coastal longitudes a narrow, supra-slab conductive zone is imaged at 22km depth with a southern termination at 45oN. It is notable that some researchers place the inboard boundary of the (mostly

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

Effect of Samarium Oxide on the Electrical Conductivity of Plasma-Sprayed SOFC Anodes

NASA Astrophysics Data System (ADS)

Panahi, S. N.; Samadi, H.; Nemati, A.

2016-10-01

Solid oxide fuel cells (SOFCs) are rapidly becoming recognized as a new alternative to traditional energy conversion systems because of their high energy efficiency. From an ecological perspective, this environmentally friendly technology, which produces clean energy, is likely to be implemented more frequently in the future. However, the current SOFC technology still cannot meet the demands of commercial applications due to temperature constraints and high cost. To develop a marketable SOFC, suppliers have tended to reduce the operating temperatures by a few hundred degrees. The overall trend for SOFC materials is to reduce their service temperature of electrolyte. Meanwhile, it is important that the other components perform at the same temperature. Currently, the anodes of SOFCs are being studied in depth. Research has indicated that anodes based on a perovskite structure are a more promising candidate in SOFCs than the traditional system because they possess more favorable electrical properties. Among the perovskite-type oxides, SrTiO3 is one of the most promising compositions, with studies demonstrating that SrTiO3 exhibits particularly favorable electrical properties in contrast with other perovskite-type oxides. The main purpose of this article is to describe our study of the effect of rare-earth dopants with a perovskite structure on the electrical behavior of anodes in SOFCs. Sm2O3-doped SrTiO3 synthesized by a solid-state reaction was coated on substrate by atmospheric plasma spray. To compare the effect of the dopant on the electrical conductivity of strontium titanate, different concentrations of Sm2O3 were used. The samples were then investigated by x-ray diffraction, four-point probe at various temperatures (to determine the electrical conductivity), and a scanning electron microscope. The study showed that at room temperature, nondoped samples have a higher electrical resistance than doped samples. As the temperature was increased, the electrical

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Deep vs shallow nature of oxygen vacancies and consequent n -type carrier concentrations in transparent conducting oxides

NASA Astrophysics Data System (ADS)

Buckeridge, J.; Catlow, C. R. A.; Farrow, M. R.; Logsdail, A. J.; Scanlon, D. O.; Keal, T. W.; Sherwood, P.; Woodley, S. M.; Sokol, A. A.; Walsh, A.

2018-05-01

The source of n -type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In2O3 ,SnO2, and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In2O3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO2, the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n -type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In2O3 , but also in SnO2 and ZnO.

Laboratory-based electrical conductivity at Martian mantle conditions

NASA Astrophysics Data System (ADS)

Verhoeven, Olivier; Vacher, Pierre

2016-12-01

Information on temperature and composition of planetary mantles can be obtained from electrical conductivity profiles derived from induced magnetic field analysis. This requires a modeling of the conductivity for each mineral phase at conditions relevant to planetary interiors. Interpretation of iron-rich Martian mantle conductivity profile therefore requires a careful modeling of the conductivity of iron-bearing minerals. In this paper, we show that conduction mechanism called small polaron is the dominant conduction mechanism at temperature, water and iron content conditions relevant to Mars mantle. We then review the different measurements performed on mineral phases with various iron content. We show that, for all measurements of mineral conductivity reported so far, the effect of iron content on the activation energy governing the exponential decrease in the Arrhenius law can be modeled as the cubic square root of the iron content. We recast all laboratory results on a common generalized Arrhenius law for iron-bearing minerals, anchored on Earth's mantle values. We then use this modeling to compute a new synthetic profile of Martian mantle electrical conductivity. This new profile matches perfectly, in the depth range [100,1000] km, the electrical conductivity profile recently derived from the study of Mars Global Surveyor magnetic field measurements.

Measurement of Electrical Conductivity into Tomato Cultivation Beds using Small Insertion Type Electrical Conductivity Sensor Designed for Agriculture

NASA Astrophysics Data System (ADS)

Kawashima, Kazuko; Futagawa, Masato; Ban, Yoshihiro; Asano, Yoshiyuki; Sawada, Kazuaki

Our group has studied on-site monitoring sensor for agricultural field. An electrical conductivity (EC) sensor had been fabricated using Si integrated circuit technology. EC information of solutions shows ion concentrations dissolving in water, and can be used as the index of nutrient concentration for plants. So, it is important to measure EC in real time and on site. Because our EC sensor (5mm×5mm in size) is smaller than other commercial ones (several centimeters), it is easy to insert and achieve measurement in rock wool. In this study, our sensor measured long term EC values in tomato cultivation soil and rock wool medium. At first, we calibrated a relationship between output voltages and EC values on the sensor. The sensor was confirmed about enough EC measurement range from 8 to 969mS/m. In long period measurement, the sensor was confirmed about continuous operation for over five months, and intermittent measurement for over a year. In measurement in the cultivation soil, the sensor indicated that water was kept and diffused in the soil. In contrast, it was found that water diffused without keeping in it in rock wool medium. We confirmed our small EC sensor is useful for on-site monitoring and analysis of solution concentration distribution in several kinds of cultivation bed in real time.

Conducting polymer nanocomposites loaded with nanotubes and fibers for electrical and thermal applications

NASA Astrophysics Data System (ADS)

Chiguma, Jasper

conducting polymer nanocomposites. In Chapter 4 epoxy nanocomposites are prepared. MWCNTs, Graphite Fibers and Boron Nitride are used as filler materials. There thermal conductivity is determined by using the Flash Technique as well as Differential Scanning Calorimetry (DSC). The thermal conductivity of graphite and BN loaded epoxy was found to be much higher than for the MWCNTs filled. Chapter 5 covers the synthesis and electrical conductivity of PANi nanotubes and nanorods without the use of templates. Also covered in this Chapter is the template free synthesis of Cu (II) hydroxide and Copper nanorods. In Chapter 6, Organic Solderability Preservatives (OSPs) are evaluated for integrity after thermal stress. The two types of OSPs that are evaluated in this chapter are a benzimidazole derivative known as WPF207 and an imidazole derivative called F2LX. The OSP WPF was found to be more robust. In Chapter 7, two encapsulants are evaluated after thermal stress. The encapsulants are Sumitomo type 6730B and type 6730B-LX. No significant differences were found after analysis.

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

NASA Astrophysics Data System (ADS)

Feigelson, B. N.; Anderson, T. J.; Abraham, M.; Freitas, J. A.; Hite, J. K.; Eddy, C. R.; Kub, F. J.

2012-07-01

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Annealing to overcome this limitation and enable longer annealing times at high temperature. We have applied this new technique to Mg-implanted GaN, and demonstrated p-type conductivity.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

PubMed

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-).

PubMed

Ohta, Hiromichi; Sugiura, Kenji; Koumoto, Kunihito

2008-10-06

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

The electrical conductivity of in vivo human uterine fibroids.

PubMed

DeLonzor, Russ; Spero, Richard K; Williams, Joseph J

2011-01-01

The purpose of this study was to determine the value of electrical conductivity that can be used for numerical modelling in vivo radiofrequency ablation (RFA) treatments of human uterine fibroids. No experimental electrical conductivity data have previously been reported for human uterine fibroids. In this study electrical data (voltage) from selected in vivo clinical procedures on human uterine fibroids were used to numerically model the treatments. Measured versus calculated power dissipation profiles were compared to determine uterine fibroid electrical conductivity. Numerical simulations were conducted utilising a wide range of values for tissue thermal conductivity, heat capacity and blood perfusion coefficient. The simulations demonstrated that power dissipation was insensitive to the exact values of these parameters for the simulated geometry, treatment duration, and power level. Consequently, it was possible to determine tissue electrical conductivity without precise knowledge of the values for these parameters. Results of this study showed that an electrical conductivity for uterine fibroids of 0.305 S/m at 37°C and a temperature coefficient of 0.2%/°C can be used for modelling Radio Frequency Ablation of human uterine fibroids at a frequency of 460 kHz for temperatures from 37°C to 100°C.

What we can learn from measurements of air electric conductivity in 222Rn-rich atmosphere

NASA Astrophysics Data System (ADS)

Seran, E.; Godefroy, M.; Pili, E.; Michielsen, N.; Bondiguel, S.

2017-02-01

Electric conductivity of air is an important characteristic of the electric properties of an atmosphere. Testing instruments to measure electric conductivity ranging from 10-13 to 10-9 S m-1 in natural conditions found in the Earth atmosphere is not an easy task. One possibility is to use stratospheric balloon flights; another (and a simpler one) is to look for terrestrial environments with significant radioactive decay. In this paper we present measurements carried out with different types of conductivity sensors in two 222Rn-rich environments, i.e., in the Roselend underground tunnel (French Alps) and in the Institute of Radioprotection and Nuclear Safety BACCARA (BAnC de CAllibrage du RAdon) chamber. The concept of the conductivity sensor is based on the classical time relaxation method. New elements in our design include isolation of the sensor sensitive part (electrode) from the external electric field and sensor miniaturization. This greatly extends the application domain of the sensor and permits to measure air electric conductivity when the external electric field is high and varies from few tens of V m-1 to up to few tens of kV m-1. This is suitable to propose the instrument for a planetary mission. Two-fold objectives were attained as the outcome of these tests and their analysis. First was directly related to the performances of the conductivity sensors and the efficiency of the conductivity sensor design to shield the external electric field. Second objective aimed at understanding the decay mechanisms of 222Rn and its progeny in atmosphere and the impact of the enclosed space on the efficiency of gas ionization.

Converting the Conducting Behavior of Graphene Oxides from n-Type to p-Type via Electron-Beam Irradiation.

PubMed

Mirzaei, Ali; Kwon, Yong Jung; Wu, Ping; Kim, Sang Sub; Kim, Hyoun Woo

2018-02-28

We studied the effects of electron-beam irradiation (EBI) on the structural and gas-sensing properties of graphene oxide (GO). To understand the effects of EBI on the structure and gas-sensing behavior of irradiated GO, the treated GO was compared with nonirradiated GO. Characterization results indicated an enhancement in the number of oxygen functional groups that occurs with EBI exposure at 100 kGy and then decreases with doses in the range of 100-500 kGy. Data from Raman spectra indicated that EBI could generate defects, and NO 2 -sensing results at room temperature showed a decreased NO 2 response after exposure to EBI at 100 kGy; further increasing the dose to 500 kGy resulted in p-type semiconducting conductivity. The conversion of GO from n-type to p-type via EBI is explained not only through the generation of holes but also the variation in the amount of residual functional groups, including carboxyl (COOH) and hydroxyl groups (C-OH). The obtained results suggest that EBI can be a useful tool to convert GO into a diverse range of sensing devices.

Anisotropy of synthetic quartz electrical conductivity at high pressure and temperature

NASA Astrophysics Data System (ADS)

Wang, Duojun; Li, Heping; Yi, Li; Matsuzaki, Takuya; Yoshino, Takashi

2010-09-01

AC measurements of the electrical conductivity of synthetic quartz along various orientations were made between 0.1 and 1 MHz, at ˜855˜1601 K and at 1.0 GPa. In addition, the electrical conductivity of quartz along the c axis has been studied at 1.0-3.0 GPa. The impedance arcs representing bulk conductivity occur in the frequency range of 103-106 Hz, and the electrical responses of the interface between the sample and the electrode occur in the 0.1˜103 Hz range. The pressure has a weak effect on the electrical conductivity. The electrical conductivity experiences no abrupt change near the α - β phase transition point. The electrical conductivity of quartz is highly anisotropic; the electrical conductivity along the c axis is strongest and several orders of magnitude larger than in other directions. The activation enthalpies along various orientations are determined to be 0.6 and 1.2 eV orders of magnitude, respectively. The interpretation of the former is based on the contribution of alkali ions, while the latter effect is attributed to additional unassociated aluminum ions. Comparison of determined anisotropic conductivity of quartz determined with those from field geophysical models shows that the quartz may potentially provide explanations for the behavior of electrical conductivity of anisotropy in the crust that are inferred from the transverse magnetic mode.

Electrically conducting porphyrin and porphyrin-fullerene electropolymers

DOEpatents

Gust, Jr., John Devens; Liddell, Paul Anthony; Gervaldo, Miguel Andres; Bridgewater, James Ward; Brennan, Bradley James; Moore, Thomas Andrew; Moore, Ana Lorenzelli

2014-03-11

Compounds with aryl ring(s) at porphyrin meso position(s) bearing an amino group in position 4 relative to the porphyrin macrocycle, and at least one unsubstituted 5 (hydrogen-bearing) meso position with the 10-, 15-, and/or 20-relationship to the aryl ring bearing the amino group, and metal complexes thereof, feature broad spectral absorption throughout the visible region. These compounds are electropolymerized to form electrically conducting porphyrin and porphyrin-fullerene polymers that are useful in photovoltaic applications. The structure of one such electrically conducting porphyrin polymer is shown below. ##STR00001##

Corrosion-protective coatings from electrically conducting polymers

NASA Technical Reports Server (NTRS)

Thompson, Karen Gebert; Bryan, Coleman J.; Benicewicz, Brian C.; Wrobleski, Debra A.

1991-01-01

In a joint effort between NASA Kennedy and LANL, electrically conductive polymer coatings were developed as corrosion protective coatings for metal surfaces. At NASA Kennedy, the launch environment consist of marine, severe solar, and intermittent high acid and/or elevated temperature conditions. Electrically conductive polymer coatings were developed which impart corrosion resistance to mild steel when exposed to saline and acidic environments. Such coatings also seem to promote corrosion resistance in areas of mild steel where scratches exist in the protective coating. Such coatings appear promising for many commercial applications.

Using electrical impedance tomography to map subsurface hydraulic conductivity

DOEpatents

Berryman, James G.; Daily, William D.; Ramirez, Abelardo L.; Roberts, Jeffery J.

2000-01-01

The use of Electrical Impedance Tomography (EIT) to map subsurface hydraulic conductivity. EIT can be used to map hydraulic conductivity in the subsurface where measurements of both amplitude and phase are made. Hydraulic conductivity depends on at least two parameters: porosity and a length scale parameter. Electrical Resistance Tomography (ERT) measures and maps electrical conductivity (which can be related to porosity) in three dimensions. By introducing phase measurements along with amplitude, the desired additional measurement of a pertinent length scale can be achieved. Hydraulic conductivity controls the ability to flush unwanted fluid contaminants from the surface. Thus inexpensive maps of hydraulic conductivity would improve planning strategies for subsequent remediation efforts. Fluid permeability is also of importance for oil field exploitation and thus detailed knowledge of fluid permeability distribution in three-dimension (3-D) would be a great boon to petroleum reservoir analysts.

Transparent conductive coatings

NASA Technical Reports Server (NTRS)

Ashok, S.

1983-01-01

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

p-Type and n-type doping of ZnSe: Effects of hydrogen incorporation

NASA Astrophysics Data System (ADS)

Fisher, P. A.; Ho, E.; House, J. L.; Petrich, G. S.; Kolodziejski, L. A.; Walker, J.; Johnson, N. M.

1995-05-01

The hydrogenation behavior of p- and n-type ZnSe grown on GaAs by gas source molecular beam epitaxy (GSMBE) is presented. Recent advances in p-type doping, using a radio frequency (RF) plasma source with nitrogen, have led to the successful fabrication of blue/green light emitters based on the (Zn,Mg)(S,Se) material system grown by molecular beam epitaxy (MBE). GSMBE replaces the high vapor pressure group VI elements with hydride gases which are amenable to regulation using precision mass flow controllers, and has the potential to deliver improved compositional control and reproducibility. We have found that the presence of hydrogen does not affect the electrical conductivity of ZnSe:Cl grown by GSMBE. In contrast, nitrogen-doped ZnSe is speculated to be electrically passivated by hydrogen for certain growth conditions as evidenced by: (1) coherent tracking of the hydrogen concentration with variations in the nitrogen concentration, which is measured by secondary ion mass spectrometry (SIMS), and (2) indications of high resistivity determined by capacitance-voltage ( C-V) measurements. Conventional and rapid thermal annealing (RTA) have been investigated to modify the degree of hydrogen passivation.

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

PubMed Central

Nakamura, Yoshiaki

2018-01-01

Abstract The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies. PMID:29371907

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity.

PubMed

Nakamura, Yoshiaki

2018-01-01

The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.

Exploring High-Performance n-Type Thermoelectric Composites Using Amino-Substituted Rylene Dimides and Carbon Nanotubes.

PubMed

Wu, Guangbao; Zhang, Zhi-Guo; Li, Yongfang; Gao, Caiyan; Wang, Xin; Chen, Guangming

2017-06-27

Taking advantage of the high electrical conductivity of a single-walled carbon nanotube (SWCNT) and the large Seebeck coefficient of rylene diimide, a convenient strategy is proposed to achieve high-performance n-type thermoelectric (TE) composites containing a SWCNT and amino-substituted perylene diimide (PDINE) or naphthalene diimide (NDINE). The obtained n-type composites display greatly enhanced TE performance with maximum power factors of 112 ± 8 (PDINE/SWCNT) and 135 ± 14 (NDINE/SWCNT) μW m -1 K -2 . A short doping time of 0.5 h can ensure high TE performance. The corresponding TE module consisting of five p-n junctions reaches a large output power of 3.3 μW under a 50 °C temperature gradient. In addition, the n-type composites exhibit high air stability and excellent thermal stability. This design strategy benefits the future fabricating of high-performance n-type TE materials and devices.

Electrically conductive ceramic powders

NASA Astrophysics Data System (ADS)

Lu, Yanxia

1999-11-01

Electrically conductive ceramic powders were investigated in this project. There are three ways to produce those materials. The first is doping alkali metal into the titanium dioxides in an inert or reducing atmosphere. The second is reducing un-doped titanium dioxide, forming a non-stoichiometric composition in a hydrogen atmosphere. The third is to coat a conductive layer, reduced titanium dioxide, on an insulating core such as alumina. Highly conductive powders have been produced by all these processes. The conductivity of powder compacts ranged between 10-2 and 10° S/cm. A novel doping process was developed. All samples were doped by a solid-vapor reaction instead of a solid state reaction. Titanium dioxide was doped with alkali metals such as Na or Li in this study. The alkali metal atom contributes an electron to the host material (TiO2), which then creates Ti 3+ ion. The conductivity was enhanced by creating the donor level due to the presence of these Ti3+ ions. The conductivity of those alkali doped titanium oxides was dependent on the doping level and charge mobility. Non-stoichiometric titanium oxides were produced by reduction of titanium dioxide in a hydrogen atmosphere at 800°C to 1000°C for 2 to 6 hours. The reduced titanium oxides showed better stability with respect to conductivity at ambient condition when compared with the Na or Li doped samples. Conductive coatings were prepared by coating titanium precursors on insulating core materials like SiO2, Al2O3 or mica. The titania coating was made by hydrolysis of titanyl sulfate (TiOSO 4) followed by a reduction procedure to form reduced titanium oxide. The reduced titanium oxides are highly conductive. A uniform coating of titanium oxides on alumina cores was successfully produced. The conductivity of coated powder composites was a function of coating quantity and hydrolysis reaction temperature. The conductivity of the powder as a function of structure, composition, temperature, frequency and

Ionic Conductivity, Structural Deformation and Programmable Anisotropy of DNA Origami in Electric Field

PubMed Central

Li, Chen-Yu; Hemmig, Elisa A.; Kong, Jinglin; Yoo, Jejoong; Hernández-Ainsa, Silvia

2015-01-01

The DNA origami technique can enable functionalization of inorganic structures for single-molecule electric current recordings. Experiments have shown that several layers of DNA molecules—a DNA origami plate— placed on top of a solid-state nanopore is permeable to ions. Here, we report a comprehensive characterization of the ionic conductivity of DNA origami plates by means of all-atom molecular dynamics (MD) simulations and nanocapillary electric current recordings. Using the MD method, we characterize the ionic conductivity of several origami constructs, revealing the local distribution of ions, the distribution of the electrostatic potential and contribution of different molecular species to the current. The simulations determine the dependence of the ionic conductivity on the applied voltage, the number of DNA layers, the nucleotide content and the lattice type of the plates. We demonstrate that increasing the concentration of Mg2+ ions makes the origami plates more compact, reducing their conductivity. The conductance of a DNA origami plate on top of a solid-state nanopore is determined by the two competing effects: bending of the DNA origami plate that reduces the current and separation of the DNA origami layers that increases the current. The latter is produced by the electro-osmotic flow and is reversible at the time scale of a hundred nanoseconds. The conductance of a DNA origami object is found to depend on its orientation, reaching maximum when the electric field aligns with the direction of the DNA helices. Our work demonstrates feasibility of programming the electrical properties of a self-assembled nanoscale object using DNA. PMID:25623807

Ionic conductivity, structural deformation, and programmable anisotropy of DNA origami in electric field.

PubMed

Li, Chen-Yu; Hemmig, Elisa A; Kong, Jinglin; Yoo, Jejoong; Hernández-Ainsa, Silvia; Keyser, Ulrich F; Aksimentiev, Aleksei

2015-02-24

The DNA origami technique can enable functionalization of inorganic structures for single-molecule electric current recordings. Experiments have shown that several layers of DNA molecules, a DNA origami plate, placed on top of a solid-state nanopore is permeable to ions. Here, we report a comprehensive characterization of the ionic conductivity of DNA origami plates by means of all-atom molecular dynamics (MD) simulations and nanocapillary electric current recordings. Using the MD method, we characterize the ionic conductivity of several origami constructs, revealing the local distribution of ions, the distribution of the electrostatic potential and contribution of different molecular species to the current. The simulations determine the dependence of the ionic conductivity on the applied voltage, the number of DNA layers, the nucleotide content and the lattice type of the plates. We demonstrate that increasing the concentration of Mg(2+) ions makes the origami plates more compact, reducing their conductivity. The conductance of a DNA origami plate on top of a solid-state nanopore is determined by the two competing effects: bending of the DNA origami plate that reduces the current and separation of the DNA origami layers that increases the current. The latter is produced by the electro-osmotic flow and is reversible at the time scale of a hundred nanoseconds. The conductance of a DNA origami object is found to depend on its orientation, reaching maximum when the electric field aligns with the direction of the DNA helices. Our work demonstrates feasibility of programming the electrical properties of a self-assembled nanoscale object using DNA.

The role of acids in electrical conduction through ice

NASA Astrophysics Data System (ADS)

Stillman, David E.; MacGregor, Joseph A.; Grimm, Robert E.

2013-03-01

Electrical conduction through meteoric polar ice is controlled by soluble impurities that originate mostly from sea salt, biomass burning, and volcanic eruptions. The strongest conductivity response is to acids, yet the mechanism causing this response has been unclear. Here we elucidate conduction mechanisms in ice using broadband dielectric spectroscopy of meteoric polar ice cores. We find that conduction through polycrystalline polar ice is consistent with Jaccard theory for migration of charged protonic point defects through single ice crystals, except that bulk DC conduction is impeded by grain boundaries. Neither our observations nor modeling using Archie's Law support the hypothesis that grain-boundary networks of unfrozen acids cause significant electrolytic conduction. Common electrical logs of ice cores (by electrical conductivity measurement [ECM] or dielectric profiling [DEP]) and the attenuation of radio waves in ice sheets thus respond to protonic point defects only. This response implies that joint interpretation of electrical and chemical logs can determine impurity partitioning between the lattice and grain boundaries or inclusions. For example, in the Greenland Ice Core Project (GRIP) ice core from central Greenland, on average more than half of the available lattice-soluble impurities (H+, Cl-, NH4+) create defects. Understanding this partitioning could help further resolve the nature of past changes in atmospheric chemistry.

Ohmic Heating of an Electrically Conductive Food Package.

PubMed

Kanogchaipramot, Kanyawee; Tongkhao, Kullanart; Sajjaanantakul, Tanaboon; Kamonpatana, Pitiya

2016-12-01

Ohmic heating through an electrically conductive food package is a new approach to heat the food and its package as a whole after packing to avoid post-process contamination and to serve consumer needs for convenience. This process has been successfully completed using polymer film integrated with an electrically conductive film to form a conductive package. Orange juice packed in the conductive package surrounded with a conductive medium was pasteurized in an ohmic heater. A mathematical model was developed to simulate the temperature distribution within the package and its surroundings. A 3-D thermal-electric model showed heating uniformity inside the food package while the hot zone appeared in the orange juice adjacent to the conductive film. The accuracy of the model was determined by comparing the experimental results with the simulated temperature and current drawn; the model showed good agreement between the actual and simulated results. An inoculated pack study using Escherichia coli O157:H7 indicated negative growth of viable microorganisms at the target and over target lethal process temperatures, whereas the microorganism was present in the under target temperature treatment. Consequently, our developed ohmic heating system with conductive packaging offers potential for producing safe food. © 2016 Institute of Food Technologists®.

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment.

PubMed

An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

2018-07-06

Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi 2 Te 3 ) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m -1 K -2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi 2 Te 3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

NASA Astrophysics Data System (ADS)

An, Hyeunhwan; Karas, Dale; Kim, Byung-Wook; Trabia, Sarah; Moon, Jaeyun

2018-07-01

Flexible thermoelectric (TE) materials, which are devices that convert thermal gradients to electrical energy, have attracted interest for practical energy-harvesting/recovery applications. However, as compared with p-type materials, the progress on the development of n-type TE flexible materials has been slow due to difficulties involved in n-type doping techniques. This study used high mobility carbon nanotubes (CNTs) to a uniformly mixed hybrid-composite, resulting in an enhanced power factor by increasing electrical conductivity. The energy filtering effect and stoichiometric composition of the material used, bismuth telluride (Bi2Te3) correlated to a significant enhancement in TE performance, with a power factor of 225.9 μW m‑1K‑2 at room temperature: a factor of 65 higher than as-fabricated composite film. This paper describes a simplified synthesis for the preparation of the composite film that eliminates time-intensive and cost-prohibitive processing, traditionally seen during extrusion and dicing inorganic manufacturing. The resulting post-annealed composite film consisting of Bi2Te3 nanowire and CNTs demonstrate a promising candidate for material that can be used for an n-type TE device that has improved energy conversion efficiency.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder.

PubMed

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-12-22

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service.

Ultrahigh Oxidation Resistance and High Electrical Conductivity in Copper-Silver Powder

PubMed Central

Li, Jiaxiang; Li, Yunping; Wang, Zhongchang; Bian, Huakang; Hou, Yuhang; Wang, Fenglin; Xu, Guofu; Liu, Bin; Liu, Yong

2016-01-01

The electrical conductivity of pure Cu powder is typically deteriorated at elevated temperatures due to the oxidation by forming non-conducting oxides on surface, while enhancing oxidation resistance via alloying is often accompanied by a drastic decline of electrical conductivity. Obtaining Cu powder with both a high electrical conductivity and a high oxidation resistance represents one of the key challenges in developing next-generation electrical transferring powder. Here, we fabricate a Cu-Ag powder with a continuous Ag network along grain boundaries of Cu particles and demonstrate that this new structure can inhibit the preferential oxidation in grain boundaries at elevated temperatures. As a result, the Cu-Ag powder displays considerably high electrical conductivity and high oxidation resistance up to approximately 300 °C, which are markedly higher than that of pure Cu powder. This study paves a new pathway for developing novel Cu powders with much enhanced electrical conductivity and oxidation resistance in service. PMID:28004839

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration wasmore » 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.« less

Electrical conductivity and Hf 4+ ion substitution range in NaSICON system

NASA Astrophysics Data System (ADS)

Essoumhi, A.; Favotto, C.; Mansori, M.; Ouzaouit, K.; Satre, P.

2007-03-01

In this paper, we present the synthesis and characterizations of NaSICON-type ionic conducting ceramics of the general formula Na 1+ xM 1.775Si x-0.9P 3.9- xO 12 with 1.8 ≤ x ≤ 2.2 and M = Zr or Hf. The effect of the total substitution of zirconium by hafnium on electric properties has been studied. The various compositions were prepared by using the sol-gel method and the synthesized precursors were characterized by coupled DTA-TG. The oxides obtained after pyrolysis of the precursors were identified by X-ray diffraction. A sintering study by thermodilatometry permits to select the best thermal cycle adapted to our ceramics. Furthermore, the electric conductivity of the sintered ceramic samples was characterized by complex impedance spectroscopy. These results show that ceramics containing Zr synthesized by soft method, present a higher total conductivity than those obtained in literature (to be around 10 -4 S cm -1). The total substitution of Zr by Hf still improves this conductivity for some compositions.

Electrically conductive rigid polyurethane foam

DOEpatents

Neet, Thomas E.; Spieker, David A.

1985-03-19

A rigid, polyurethane foam comprises about 2-10 weight percent, based on the total foam weight, of a carbon black which is CONDUCTEX CC-40-220 or CONDUCTEX SC, whereby the rigid polyurethane foam is electrically conductive and has essentially the same mechanical properties as the same foam without carbon black added.

Transport properties of olivine grain boundaries from electrical conductivity experiments

NASA Astrophysics Data System (ADS)

Pommier, Anne; Kohlstedt, David L.; Hansen, Lars N.; Mackwell, Stephen; Tasaka, Miki; Heidelbach, Florian; Leinenweber, Kurt

2018-05-01

Grain boundary processes contribute significantly to electronic and ionic transports in materials within Earth's interior. We report a novel experimental study of grain boundary conductivity in highly strained olivine aggregates that demonstrates the importance of misorientation angle between adjacent grains on aggregate transport properties. We performed electrical conductivity measurements of melt-free polycrystalline olivine (Fo90) samples that had been previously deformed at 1200 °C and 0.3 GPa to shear strains up to γ = 7.3. The electrical conductivity and anisotropy were measured at 2.8 GPa over the temperature range 700-1400 °C. We observed that (1) the electrical conductivity of samples with a small grain size (3-6 µm) and strong crystallographic preferred orientation produced by dynamic recrystallization during large-strain shear deformation is a factor of 10 or more larger than that measured on coarse-grained samples, (2) the sample deformed to the highest strain is the most conductive even though it does not have the smallest grain size, and (3) conductivity is up to a factor of 4 larger in the direction of shear than normal to the shear plane. Based on these results combined with electrical conductivity data for coarse-grained, polycrystalline olivine and for single crystals, we propose that the electrical conductivity of our fine-grained samples is dominated by grain boundary paths. In addition, the electrical anisotropy results from preferential alignment of higher-conductivity grain boundaries associated with the development of a strong crystallographic preferred orientation of the grains.

Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap

NASA Astrophysics Data System (ADS)

Wang, Hui; Shi, Jun-jie; Huang, Pu; Ding, Yi-min; Wu, Meng; Cen, Yu-lang; Yu, Tongjun

2018-04-01

Recently, two-dimensional (2D) InSe nanosheet becomes a promising material for electronic and optoelectronic nano-devices due to its excellent electron transport, wide bandgap tunability and good metal contact. The inevitable native point defects are essential in determining its characteristics and device performance. Here we investigate the defect formation energy and thermodynamic transition levels for the most important native defects and clarify the physical origin of n-type conductivity in unintentionally doped 2D InSe by using the powerful first-principles calculations. We find that both surface In adatom and Se vacancy are the key defects, and the In adatom, donated 0.65 electrons to the host, causes the n-type conductivity in monolayer InSe under In-rich conditions. For bilayer or few-layer InSe, the In interstitial within the van der Waals gap, transferred 0.68 electrons to InSe, is found to be the most stable donor defect, which dominates the n-type character. Our results are significant for understanding the defect nature of 2D InSe and improving the related nano-device performance.

Method for electrically isolating an electrically conductive member from another such member

DOEpatents

Tsang, K.L.; Chen, Y.

1984-02-09

The invention relates to methods for electrically isolating a first electrically conductive member from another such member by means of an electrically insulating medium. In accordance with the invention, the insulating medium is provided in the form of MgO which contains a dopant selected from lithium, copper, cobalt, sodium, silver, gold and hydrogen. The dopant is present in the MgO in an amount effective to suppress dielectric breakdown of the MgO, even at elevated temperatures and in the presence of electrical fields.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, C.E.; Scott, D.G.

1984-06-25

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal 10 borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Electrically conductive containment vessel for molten aluminum

DOEpatents

Holcombe, Cressie E.; Scott, Donald G.

1985-01-01

The present invention is directed to a containment vessel which is particularly useful in melting aluminum. The vessel of the present invention is a multilayered vessel characterized by being electrically conductive, essentially nonwettable by and nonreactive with molten aluminum. The vessel is formed by coating a tantalum substrate of a suitable configuration with a mixture of yttria and particulate metal borides. The yttria in the coating inhibits the wetting of the coating while the boride particulate material provides the electrical conductivity through the vessel. The vessel of the present invention is particularly suitable for use in melting aluminum by ion bombardment.

Electrically conductive rigid polyurethane foam

DOEpatents

Neet, T.E.; Spieker, D.A.

1983-12-08

A rigid, moldable polyurethane foam comprises about 2 to 10 weight percent, based on the total foam weight, of a carbon black which is CONDUCTEX CC-40-220 or CONDUCTEX SC, whereby the rigid polyurethane foam is electrically conductive and has essentially the same mechanical properties as the same foam without carbon black added.

Electrical Conductivity in Transition Metals

ERIC Educational Resources Information Center

Talbot, Christopher; Vickneson, Kishanda

2013-01-01

The aim of this "Science Note" is to describe how to test the electron-sea model to determine whether it accurately predicts relative electrical conductivity for first-row transition metals. In the electron-sea model, a metal crystal is viewed as a three-dimensional array of metal cations immersed in a sea of delocalised valence…

[Myocardial infarction after conduction electrical weapon shock].

PubMed

Ben Ahmed, H; Bouzouita, K; Selmi, K; Chelli, M; Mokaddem, A; Ben Ameur, Y; Boujnah, M R

2013-04-01

Controversy persists over the safety of conducted electrical weapons, which are increasingly used by law enforcement agencies around the world. We report a case of 33-year-old man who had an acute inferior myocardial infarction after he was shot in the chest with an electrical weapon. Copyright © 2012 Elsevier Masson SAS. All rights reserved.

A percolation approach to study the high electric field effect on electrical conductivity of insulating polymer

NASA Astrophysics Data System (ADS)

Benallou, Amina; Hadri, Baghdad; Martinez-Vega, Juan; El Islam Boukortt, Nour

2018-04-01

The effect of percolation threshold on the behaviour of electrical conductivity at high electric field of insulating polymers has been briefly investigated in literature. Sometimes the dead ends links are not taken into account in the study of the electric field effect on the electrical properties. In this work, we present a theoretical framework and Monte Carlo simulation of the behaviour of the electric conductivity at high electric field based on the percolation theory using the traps energies levels which are distributed according to distribution law (uniform, Gaussian, and power-law). When a solid insulating material is subjected to a high electric field, and during trapping mechanism the dead ends of traps affect with decreasing the electric conductivity according to the traps energies levels, the correlation length of the clusters, the length of the dead ends, and the concentration of the accessible positions for the electrons. A reasonably good agreement is obtained between simulation results and the theoretical framework.

Comparative study on degradation and trap density-of-states of p type and n type organic semiconductors

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Vikas, L. S.; Jayaraj, M. K.; Puigdollers, J.

2014-10-01

The OTFTs with both p type and n type channel layers were fabricated using the inverted-staggered (top contact) structure by thermal vapour deposition on Si/SiO2 substrate. Pentacene and N,N'-Dioctyl- 3,4,9,10- perylenedicarboximide (PTCDI-C8) were used as channel layer for the fabrications of p type and n type OTFTs respectively. A comparative study on the degradation and density of states (DOS) of p type and n type organic semiconductors have been carried out. In order to compare the stability and degradation of pentacene and PTCDI-C8 OTFTs, the devices were exposed to air for 2 h before performing electrical measurements in air. The DOS measurements revealed that a level with defect density of 1020 cm-3 was formed only in PTCDI C8 layer on exposure to air. The oxygen adsorption into the PTCDI-C8 active layer can be attributed to the formation of this level at 0.15 eV above the LUMO level. The electrical charge transport is strongly affected by the oxygen traps and hence n type organic materials are less stable than p type organic materials.

Electrical conductivity of hydrous andesitic melts pertinent to subduction zones

NASA Astrophysics Data System (ADS)

Guo, Xuan; Li, Bin; Ni, Huaiwei; Mao, Zhu

2017-03-01

Andesitic magmatism and rocks are widespread at convergent plate boundaries. Electrically conductive bodies beneath subduction zone arc volcanoes, such as the Uturuncu Volcano, Bolivia, may correspond to active reservoirs of H2O-bearing andesitic magma. Laboratory measurements of electrical conductivity of hydrous andesitic melts are required to constrain the physicochemical conditions of these magma reservoirs in combination with magnetotelluric data. This experimental study investigates electrical conductivity of andesitic melts with 0.01-5.9 wt % of H2O at 1164-1573 K and 0.5-1.0 GPa in a piston cylinder apparatus using sweeping-frequency impedance spectroscopy. Electrical conductivity of andesitic melt increases with increasing temperature and H2O concentration but decreases with pressure. Across the investigated range of H2O concentration, electrical conductivity varies by 1.2-2.4 log units, indicating stronger influence of H2O for andesitic melt than for rhyolitic and dacitic melts. Using the Nernst-Einstein equation, the principal charge carrier is inferred to be Na in anhydrous melt but divalent cations in hydrous andesitic melts. The experimental data are regressed into a general electrical conductivity model for andesitic melt accounting for the pressure-temperature-H2O dependences altogether. Modeling results show that the conductive layer at >20 km depths beneath the surface of the Uturuncu Volcano could be interpreted by the presence of less than 20 vol % of H2O-rich andesitic melt (with 6-9 wt % H2O).

Electrical Conductivity and Barrier Properties of Lithium Niobate Thin Films

NASA Astrophysics Data System (ADS)

Gudkov, S. I.; Baklanova, K. D.; Kamenshchikov, M. V.; Solnyshkin, A. V.; Belov, A. N.

2018-04-01

The thin-film structures made of LiNbO3 and obtained via laser ablation and magnetron sputtering are studied with volt-farad and volt-ampere characteristics. A potential barrier on the Si-LiNbO3 interface was found for both types of the films with the capacitance-voltage characteristics. The current-voltage characteristics showed that there are several conduction mechanisms in the structures studied. The Poole-Frenkel effect and the currents limited by a space charge mainly contribute to the electrical conductivity in the LiNbO3 film produced with the laser ablation method. The currents limited by a space charge contribute to the main mechanism in the film heterostructure obtained with the magnetron sputtering method.

Effect of orientation on electrically conducting thermoplastic composite properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genetti, W.B.; Grady, B.P.

1996-10-01

Properties of electrically conducting composites made from low density polyethylene (LDPE), high density polyethylene (HDPE), and polypropylene (PP) filled with nickel flake are being studied as a function of nickel concentration and draw ratio. The effect on electrical conduction, crystallinity, melt temperature, tensile modulus, and elongation at break are being tested. The melt temperature increases with increasing nickel concentration. The electrical conduction increases slowly with increased nickel concentration to the percolation volume fraction, then increases sharply. Orientation by uniaxial stretching of the films should allow conductive pathways to form throughout the polymer more easily by forcing particles closer together, thusmore » reducing the percolation volume fraction. This process could be caused by both alignment of the polymer chains and by stress induced crystallization that forces the particles into smaller amorphous regions.« less

Method of imaging the electrical conductivity distribution of a subsurface

DOEpatents

Johnson, Timothy C.

2017-09-26

A method of imaging electrical conductivity distribution of a subsurface containing metallic structures with known locations and dimensions is disclosed. Current is injected into the subsurface to measure electrical potentials using multiple sets of electrodes, thus generating electrical resistivity tomography measurements. A numeric code is applied to simulate the measured potentials in the presence of the metallic structures. An inversion code is applied that utilizes the electrical resistivity tomography measurements and the simulated measured potentials to image the subsurface electrical conductivity distribution and remove effects of the subsurface metallic structures with known locations and dimensions.

Electrical Conductivity of HgTe at High Temperatures

NASA Technical Reports Server (NTRS)

Li, C.; Lehoczky, S. L.; Su, C.-H.; Scripa, R. N.

2004-01-01

The electrical conductivity of HgTe was measured using a rotating magnetic field method from 300 K to the melting point (943 K). A microscopic theory for electrical conduction was used to calculate the expected temperature dependence of the HgTe conductivity. A comparison between the measured and calculated conductivities was used to obtain the estimates of the temperature dependence of Gamma(sub 6)-Gamma(sub 8) energy gap from 300 K to 943 K. The estimated temperature coefficient for the energy gap was comparable to the previous results at lower temperatures (less than or equal to 300 K). A rapid increase in the conductivity just above 300 K and a subsequent decrease at 500 K is attributed to band crossover effects. This paper describes the experimental approach and some of the theoretical calculation details.

Comparison of electrical conductivity calculation methods for natural waters

USGS Publications Warehouse

McCleskey, R. Blaine; Nordstrom, D. Kirk; Ryan, Joseph N.

2012-01-01

The capability of eleven methods to calculate the electrical conductivity of a wide range of natural waters from their chemical composition was investigated. A brief summary of each method is presented including equations to calculate the conductivities of individual ions, the ions incorporated, and the method's limitations. The ability of each method to reliably predict the conductivity depends on the ions included, effective accounting of ion pairing, and the accuracy of the equation used to estimate the ionic conductivities. The performances of the methods were evaluated by calculating the conductivity of 33 environmentally important electrolyte solutions, 41 U.S. Geological Survey standard reference water samples, and 1593 natural water samples. The natural waters tested include acid mine waters, geothermal waters, seawater, dilute mountain waters, and river water impacted by municipal waste water. The three most recent conductivity methods predict the conductivity of natural waters better than other methods. Two of the recent methods can be used to reliably calculate the conductivity for samples with pH values greater than about 3 and temperatures between 0 and 40°C. One method is applicable to a variety of natural water types with a range of pH from 1 to 10, temperature from 0 to 95°C, and ionic strength up to 1 m.

Maximum on the Electrical Conductivity Polytherm of Molten TeCl4

NASA Astrophysics Data System (ADS)

Salyulev, Alexander B.; Potapov, Alexei M.

2017-05-01

The electrical conductivity of molten TeCl4 was measured up to 761K, i.e. 106 degrees above the normal boiling point of the salt. For the first time it was found that TeCl4 electrical conductivity polytherm has a maximum. It was recorded at 705K (κmax=0.245 Sm/cm), whereupon the conductivity decreases as the temperature rises. The activation energy of electrical conductivity was calculated.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Conductive network formation of carbon nanotubes in elastic polymer microfibers and its effect on the electrical conductance: Experiment and simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Hyun Woo; Kim, Jeongmin; Sung, Bong June, E-mail: jjpark@chonnam.ac.kr, E-mail: bjsung@sogang.ac.kr

We investigate how the electrical conductance of microfibers (made of polymers and conductive nanofillers) decreases upon uniaxial deformation by performing both experiments and simulations. Even though various elastic conductors have been developed due to promising applications for deformable electronic devices, the mechanism at a molecular level for electrical conductance change has remained elusive. Previous studies proposed that the decrease in electrical conductance would result from changes in either distances or contact numbers between conductive fillers. In this work, we prepare microfibers of single walled carbon nanotubes (SWCNTs)/polyvinyl alcohol composites and investigate the electrical conductance and the orientation of SWCNTs uponmore » uniaxial deformation. We also perform extensive Monte Carlo simulations, which reproduce experimental results for the relative decrease in conductance and the SWCNTs orientation. We investigate the electrical networks of SWCNTs in microfibers and find that the decrease in the electrical conductance upon uniaxial deformation should be attributed to a subtle change in the topological structure of the electrical network.« less

Synthesis of p-type GaN nanowires.

PubMed

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

An electrical method for the measurement of the thermal and electrical conductivity of reduced graphene oxide nanostructures.

PubMed

Schwamb, Timo; Burg, Brian R; Schirmer, Niklas C; Poulikakos, Dimos

2009-10-07

This paper introduces an electrical four-point measurement method enabling thermal and electrical conductivity measurements of nanoscale materials. The method was applied to determine the thermal and electrical conductivity of reduced graphene oxide flakes. The dielectrophoretically deposited samples exhibited thermal conductivities in the range of 0.14-2.87 W m(-1) K(-1) and electrical conductivities in the range of 6.2 x 10(2)-6.2 x 10(3) Omega(-1) m(-1). The measured properties of each flake were found to be dependent on the duration of the thermal reduction and are in this sense controllable.

Evaluation of electrical conductivity of Cu and Al through sub microsecond underwater electrical wire explosion

NASA Astrophysics Data System (ADS)

Sheftman, D.; Shafer, D.; Efimov, S.; Krasik, Ya. E.

2012-03-01

Sub-microsecond timescale underwater electrical wire explosions using Cu and Al materials have been conducted. Current and voltage waveforms and time-resolved streak images of the discharge channel, coupled to 1D magneto-hydrodynamic simulations, have been used to determine the electrical conductivity of the metals for the range of conditions between hot liquid metal and strongly coupled non-ideal plasma, in the temperature range of 10-60 KK. The results of these studies showed that the conductivity values obtained are typically lower than those corresponding to modern theoretical electrical conductivity models and provide a transition between the conductivity values obtained in microsecond time scale explosions and those obtained in nanosecond time scale wire explosions. In addition, the measured wire expansion shows good agreement with equation of state tables.

Tunable electrical conductivity in metal-organic framework thin film devices

DOEpatents

Talin, Albert Alec; Allendorf, Mark D.; Stavila, Vitalie; Leonard, Francois

2016-08-30

A composition including a porous metal organic framework (MOF) including an open metal site and a guest species capable of charge transfer that can coordinate with the open metal site, wherein the composition is electrically conductive. A method including infiltrating a porous metal organic framework (MOF) including an open metal site with a guest species that is capable of charge transfer; and coordinating the guest species to the open metal site to form a composition including an electrical conductivity greater than an electrical conductivity of the MOF.

Tunable electrical conductivity in metal-organic framework thin film devices

DOEpatents

Talin, Albert Alec; Allendorf, Mark D.; Stavila, Vitalie; Leonard, Francois

2016-05-24

A composition including a porous metal organic framework (MOF) including an open metal site and a guest species capable of charge transfer that can coordinate with the open metal site, wherein the composition is electrically conductive. A method including infiltrating a porous metal organic framework (MOF) including an open metal site with a guest species that is capable of charge transfer; and coordinating the guest species to the open metal site to form a composition including an electrical conductivity greater than an electrical conductivity of the MOF.

Electrical conductivity and modulus formulation in zinc modified bismuth boro-tellurite glasses

NASA Astrophysics Data System (ADS)

Dhankhar, Sunil; Kundu, R. S.; Dult, Meenakshi; Murugavel, S.; Punia, R.; Kishore, N.

2016-09-01

The ac conductivity of zinc modified tellurium based quaternary glasses having composition 60 TeO2-10 B2O3-(30 - x) Bi2O3-x ZnO; x = 10, 15, 20, 25 and 30 has been investigated in the frequency range 10-1-105 Hz and in temperature range 483-593 K. Frequency and temperature dependent ac conductivity found to obey Jonscher power law modified by Almond-West. DC conductivity, crossover frequency and frequency exponent have been estimated from the fitting of the experimental data of conductivity with Jonscher power law modified by Almond-West. The ac conductivity and its frequency exponent have been analyzed by various theoretical models. In presently studied glasses ac conduction takes place via tunneling of overlapping large polaron tunneling. Activation energy is found to be increased with increase in zinc content and dc conduction takes place via variable range hopping proposed by Mott with some modification suggested by Punia et al. The value of the stretched exponent ( β) obtained by fitting of M^' ' }} reveals the presence of non-Debye type relaxation. Scaling spectra of ac conductivity and electric modulus collapse into a single master curve for all compositions and temperatures, reveals the presence of composition and temperature independent conduction and relaxation process in these glasses. Activation energy of conduction ( W) and electric modulus ( E R ) are nearly equal, indicating that polaron have to overcome the same energy barrier during conduction as well as relaxation processes.

Constitutive restrictions for deformable simple media that are heat conducting and electrically polarizable

NASA Astrophysics Data System (ADS)

Montanaro, Adriano

2017-07-01

We present the constitutive restrictions for a deformable simple medium that is heat conducting, electrically polarizable and interacting with the electric field, either of elastic type or with a fading memory. The used theory is an extension of the well known Green-Naghdi thermo-mechanical theories of continua, mainly devoted to thermoelastic bodies or rigid conductors. Hence the theory that is used here is based on an entropy balance law rather than an entropy imbalance, uses the notion of thermal displacement, and predicts heat propagation by thermal waves at finite speed.

A nonconjugated radical polymer glass with high electrical conductivity

NASA Astrophysics Data System (ADS)

Joo, Yongho; Agarkar, Varad; Sung, Seung Hyun; Savoie, Brett M.; Boudouris, Bryan W.

2018-03-01

Solid-state conducting polymers usually have highly conjugated macromolecular backbones and require intentional doping in order to achieve high electrical conductivities. Conversely, single-component, charge-neutral macromolecules could be synthetically simpler and have improved processibility and ambient stability. We show that poly(4-glycidyloxy-2,2,6,6-tetramethylpiperidine-1-oxyl), a nonconjugated radical polymer with a subambient glass transition temperature, underwent rapid solid-state charge transfer reactions and had an electrical conductivity of up to 28 siemens per meter over channel lengths up to 0.6 micrometers. The charge transport through the radical polymer film was enabled with thermal annealing at 80°C, which allowed for the formation of a percolating network of open-shell sites in electronic communication with one another. The electrical conductivity was not enhanced by intentional doping, and thin films of this material showed high optical transparency.

Electrically Conductive Porous Membrane

NASA Technical Reports Server (NTRS)

Burke, Kenneth Alan (Inventor)

2014-01-01

The present invention relates to an electrically conductive membrane that can be configured to be used in fuel cell systems to act as a hydrophilic water separator internal to the fuel cell, or as a water separator used with water vapor fed electrolysis cells, or as a water separator used with water vapor fed electrolysis cells, or as a capillary structure in a thin head pipe evaporator, or as a hydrophobic gas diffusion layer covering the fuel cell electrode surface in a fuel cell.

The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives

NASA Astrophysics Data System (ADS)

Lehmann, Daniel; Zahn, Dietrich R. T.

2009-04-01

A comparison of the electrical characteristics of organic field-effect transistors (OFETs) based on derivatives of the electron-conductor perylene tetracarboxylic diimide (PTCDI) in top-contact configuration is presented. The derivatives used are N,N'-dimethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMe-PTCDI), N,N'-diphenyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiPhenyl-PTCDI), N,N'-dimethoxyethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMethoxyethyl-PTCDI), N,N'-di(3-pentyl)-3,4,9,10-perylene-tetracarboxylic-diimide (Di3Pentyl-PTCDI), and N,N'-diheptyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiHeptyl-PTCDI). Current/voltage measurements were first performed in situ and later ex situ. Additionally, the effect of annealing and bias stress was probed in situ. A strong influence of the different side groups on the order of magnitude of the electron mobility is revealed, ranging from 4×10-6 cm2/V s for DiMethoxyethyl-PTCDI to 5×10-2 cm2/V s for DiHeptyl-PTCDI. While none of the devices was stable in air after exposition to air, only the DiMe-PTCDI one resumed its functionality after restoring vacuum conditions. The dielectric functions of the derivatives was derived, additionally revealing optical isotropy for all films and varying surface roughness. While DiHeptyl-PTCDI and Di3Pentyl-PTCDI, yielding also the highest electron mobilities, form smooth layers with negligible surface roughness, strong island formation was be observed for DiPhenyl-PTCDI and DiMethoxyethyl-PTCDI, yielding low mobilities. This island growth was also confirmed by atomic force microscopy measurements. Ageing of the samples for several months under ambient conditions leads to increased roughness for the very rough samples. Layers with smooth surface, on the other hand, showed no significant change in the dielectric behavior of the sample.

Thermal and Electrical Conductivity Measurements of Cda 510 Phosphor Bronze

NASA Astrophysics Data System (ADS)

Tuttle, J.; Canavan, E.; DiPirro, M.

2010-04-01

Many cryogenic systems use electrical cables containing phosphor bronze wire. While phosphor bronze's electrical and thermal conductivity values have been published, results vary among different phosphor bronze formulations. The James Webb Space Telescope (JWST) will use several phosphor bronze wire harnesses containing a specific formulation (CDA 510, annealed temper). These harnesses dominate the heat conducted into the JWST instrument stage, and approximately half of the harness conductance is due to the phosphor bronze wires. Since the JWST radiators are expected to keep the instruments at their operating temperature with limited cooling margin, it is important to know the thermal conductivity of the actual alloy being used. We describe an experiment that measured its electrical and thermal conductivity between 4 and 295 Kelvin.

Development of Tailorable Electrically Conductive Thermal Control Material Systems

NASA Technical Reports Server (NTRS)

Deshpande, M. S.; Harada, Y.

1998-01-01

The optical characteristics of surfaces on spacecraft are fundamental parameters in controlling its temperature. Passive thermal control coatings with designed solar absorptance and infrared emittance properties have been developed and been in use for some time. In this total space environment, the coating must be stable and maintain its desired optical properties for the course of the mission lifetime. The mission lifetimes are increasing and in our quest to save weight, newer substrates are being integrated which limit electrical grounding schemes. All of this has already added to the existing concerns about spacecraft charging and related spacecraft failures or operational failures. The concern is even greater for thermal control surfaces that are very large. One way of alleviating such concerns is to design new thermal control material systems (TCMS) that can help to mitigate charging via providing charge leakage paths. The object of this program was to develop two types of passive electrically conductive TCMS.

Electrical conductivity of basaltic and carbonatite melt-bearing peridotites at high pressures: Implications for melt distribution and melt fraction in the upper mantle

NASA Astrophysics Data System (ADS)

Yoshino, Takashi; Laumonier, Mickael; McIsaac, Elizabeth; Katsura, Tomoo

2010-07-01

Electrical impedance measurements were performed on two types of partial molten samples with basaltic and carbonatitic melts in a Kawai-type multi-anvil apparatus in order to investigate melt fraction-conductivity relationships and melt distribution of the partial molten mantle peridotite under high pressure. The silicate samples were composed of San Carlos olivine with various amounts of mid-ocean ridge basalt (MORB), and the carbonate samples were a mixture of San Carlos olivine with various amounts of carbonatite. High-pressure experiments on the silicate and carbonate systems were performed up to 1600 K at 1.5 GPa and up to at least 1650 K at 3 GPa, respectively. The sample conductivity increased with increasing melt fraction. Carbonatite-bearing samples show approximately one order of magnitude higher conductivity than basalt-bearing ones at the similar melt fraction. A linear relationship between log conductivity ( σbulk) and log melt fraction ( ϕ) can be expressed well by the Archie's law (Archie, 1942) ( σbulk/ σmelt = Cϕn) with parameters C = 0.68 and 0.97, n = 0.87 and 1.13 for silicate and carbonate systems, respectively. Comparison of the electrical conductivity data with theoretical predictions for melt distribution indicates that the model assuming that the grain boundary is completely wetted by melt is the most preferable melt geometry. The gradual change of conductivity with melt fraction suggests no permeability jump due to melt percolation at a certain melt fraction. The melt fraction of the partial molten region in the upper mantle can be estimated to be 1-3% and ˜ 0.3% for basaltic melt and carbonatite melt, respectively.

Inductive Measurement of Plasma Jet Electrical Conductivity (MSFC Center Director's discretionary Fund). Part 2

NASA Technical Reports Server (NTRS)

Turner, M. W.; Hawk, C. W.; Litchford, R. J.

2001-01-01

Measurement of plasma jet electrical conductivity has utility in the development of explosively driven magnetohydrodynamic (MHD) energy converters as well as magnetic flux compression reaction chambers for nuclear/chemical pulse propulsion and power. Within these types of reactors, the physical parameter of critical importance to underlying MHD processes is the magnetic Reynolds number, the value of which depends upon the product of plasma electrical conductivity and velocity. Therefore, a thorough understanding of MHD phenomena at high magnetic Reynolds number is essential, and methods are needed for the accurate and reliable measurement of electrical conductivity in high-speed plasma jets. It is well known that direct measurements using electrodes suffer from large surface resistance, and an electrodeless technique is desired. To address this need, an inductive probing scheme, originally developed for shock tube studies, has been adapted. In this method, the perturbation of an applied magnetic field by a plasma jet induces a voltage in a search coil, which, in turn, can be used to infer electrical conductivity through the inversion of a Fredholm integral equation of the first kind. A 1-in.-diameter probe using a light-gas gun. Exploratory laboratory experiments were carried out using plasma jets expelled from 15-g shaped charges. Measured conductivities were in the range of 4 kS/m for unseeded octol charges and 26 kS/m for seeded octol charges containing 2-percent potassium carbonate by mass.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films.

PubMed

Yang, C-H; Seidel, J; Kim, S Y; Rossen, P B; Yu, P; Gajek, M; Chu, Y H; Martin, L W; Holcomb, M B; He, Q; Maksymovych, P; Balke, N; Kalinin, S V; Baddorf, A P; Basu, S R; Scullin, M L; Ramesh, R

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A 'dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of approximately 1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

NASA Astrophysics Data System (ADS)

Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

2009-06-01

Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

Detection of temperature distribution via recovering electrical conductivity in MREIT.

PubMed

Oh, Tong In; Kim, Hyung Joong; Jeong, Woo Chul; Chauhan, Munish; Kwon, Oh In; Woo, Eung Je

2013-04-21

In radiofrequency (RF) ablation or hyperthermia, internal temperature measurements and tissue property imaging are important to control their outputs and assess the treatment effect. Recently, magnetic resonance electrical impedance tomography (MREIT), as a non-invasive imaging method of internal conductivity distribution using an MR scanner, has been developed. Its reconstruction algorithm uses measured magnetic flux density induced by injected currents. The MREIT technique has the potential to visualize electrical conductivity of tissue with high spatial resolution and measure relative conductivity variation according to the internal temperature change based on the fact that the electrical conductivity of biological tissues is sensitive to the internal temperature distribution. In this paper, we propose a method to provide a non-invasive alternative to monitor the internal temperature distribution by recovering the electrical conductivity distribution using the MREIT technique. To validate the proposed method, we design a phantom with saline solution and a thin transparency film in a form of a hollow cylinder with holes to create anomalies with different electrical and thermal conductivities controlled by morphological structure. We first prove the temperature maps with respect to spatial and time resolution by solving the thermal conductivity partial differential equation with the real phantom experimental environment. The measured magnetic flux density and the reconstructed conductivity distributions using the phantom experiments were compared to the simulated temperature distribution. The relative temperature variation of two testing objects with respect to the background saline was determined by the relative conductivity contrast ratio (rCCR,%). The relation between the temperature and conductivity measurements using MREIT was approximately linear with better accuracy than 0.22 °C.

Electrical properties and transport mechanisms of p-znte/n-si heterojunctions

NASA Astrophysics Data System (ADS)

Seyam, M. A. M.; El-Shair, H. T.; Salem, G. F.

2008-03-01

Zinc telluride thin films have been deposited on glass and silicon wafers substrates at room temperature by thermal evaporation technique in a vacuum of 10-5 Torr. The thickness dependence of both the dc electrical resistivity and thermoelectric power of ZnTe were carried out at room temperature and after being annealed over a thickness range from 22 nm to 170 nm. The type of conduction, the carriers concentration and the conduction mechanisms were revealed. The average thermal activation energy Δ E equals to 0.324 eV for the as deposited films and 0.306 eV for annealed films, it is found to correspond with the ionization energy reported for intrinsic defect levels in ZnTe. Seebeck coefficient measurements showed that ZnTe thin films behave as p-type semiconductor and the average value of the free charge carrier concentration is found to be 1.6×1019 cm-3. The built-in voltage, the width of the depletion region, the diode quality factor and the operating conduction mechanisms have been determined from dark current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-ZnTe/ n-Si heterojunctions.

Simplified Calculation of the Electrical Conductivity of Composites with Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Ivanov, S. G.; Aniskevich, A.; Kulakov, V.

2018-03-01

The electrical conductivity of two groups of polymer nanocomposites filled with the same NC7000 carbon nanotubes (CNTs) beyond the percolation threshold is described with the help of simple formulas. Different manufacturing process of the nanocomposites led to different CNT network structures, and, as a consequence, their electrical conductivity, at the same CNT volume, differed by two orders of magnitude. The relation between the electrical conductivity and the volume content of CNTs of the first group of composites (with a higher electrical conductivity) is described assuming that the CNT network structure is close to a statistically homogeneous one. The formula for this case, derived on the basis of a self-consistent model, includes only two parameters: the effective longitudinal electrical conductivity of CNT and the percolation threshold (the critical value of CNT volume content). These parameters were determined from two experimental points of electrical conductivity as a function of the volume fraction of CNTs. The second group of nanocomposites had a pronounced agglomerative structure, which was confirmed by microscopy data. To describe the low electrical conductivity of this group of nanocomposites, a formula based on known models of micromechanics is proposed. Two parameters of this formula were determined from experimental data of the first group, but the other two — of the second group of nanocomposites. A comparison of calculation and experimental relations confirmed the practical expediency of using the approach described.

Transverse conductivity of a relativistic plasma in oblique electric and magnetic fields

NASA Technical Reports Server (NTRS)

Melia, Fulvio; Fatuzzo, Marco

1991-01-01

Resistive tearing in a primary candidate for flares occurring in stressed magnetic fields. Its possible application to the strongly magnetized environments (Hz about 10 to the 12th G) near the surface of neutron stars, particularly as a mechanism for generating the plasma heating and particle acceleration leading to gamma-ray bursts, has motivated a quantum treatment of this process, which requires knowledge of the electrical conductivity sigma of a relativistic gas in a new domain (i.e., that of a low-density n/e/) plasma in oblique electric and magnetic fields. This paper discusses the mathematical formalism for calculating sigma and present numerical results for a wide range of parameter values. The results indicate that sigma depends very strongly on both the applied electric and magnetic fields.

Electrically conductive alternating copolymers

DOEpatents

Aldissi, M.; Jorgensen, B.S.

1987-08-31

Polymers which are soluble in common organic solvents and are electrically conductive, but which also may be synthesized in such a manner that they become nonconductive. Negative ions from the electrolyte used in the electrochemical synthesis of a polymer are incorporated into the polymer during the synthesis and serve as a dopant. A further electrochemical step may be utilized to cause the polymer to be conductive. The monomer repeat unit is comprised of two rings, a pyrrole molecule joined to a thienyl group, or a furyl group, or a phenyl group. The individual groups of the polymers are arranged in an alternating manner. For example, the backbone arrangement of poly(furylpyrrole) is -furan-pyrrole-furan-pyrrole- furan-pyrrole. An alkyl group or phenyl group may be substituted for either or both of the hydrogen atoms of the pyrrole ring.

Transparent Conducting Oxides—An Up-To-Date Overview

PubMed Central

Stadler, Andreas

2012-01-01

Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication. PMID:28817002

New conducted electrical weapons: Electrical safety relative to relevant standards.

PubMed

Panescu, Dorin; Nerheim, Max; Kroll, Mark W; Brave, Michael A

2017-07-01

We have previously published about TASER ® conducted electrical weapons (CEW) compliance with international standards. CEWs deliver electrical pulses that can inhibit a person's neuromuscular control or temporarily incapacitate. An eXperimental Rotating-Field (XRF) waveform CEW and the X2 CEW are new 2-shot electrical weapon models designed to target a precise amount of delivered charge per pulse. They both can deploy 1 or 2 dart pairs, delivered by 2 separate cartridges. Additionally, the XRF controls delivery of incapacitating pulses over 4 field vectors, in a rotating sequence. As in our previous study, we were motivated by the need to understand the cardiac safety profile of these new CEWs. The goal of this paper is to analyze the nominal electrical outputs of TASER XRF and X2 CEWs in reference to provisions of all relevant international standards that specify safety requirements for electrical medical devices and electrical fences. Although these standards do not specifically mention CEWs, they are the closest electrical safety standards and hence give very relevant guidance. The outputs of several TASER XRF and X2 CEWs were measured under normal operating conditions. The measurements were compared against manufacturer specifications. CEWs electrical output parameters were reviewed against relevant safety requirements of UL 69, IEC 60335-2-76 Ed 2.1, IEC 60479-1, IEC 60479-2, AS/NZS 60479.1, AS/NZS 60479.2, IEC 60601-1 and BS EN 60601-1. Our study confirmed that the nominal electrical outputs of TASER XRF and X2 CEWs lie within safety bounds specified by relevant standards.

Electrical and optical evaluation of n-type doping in In x Ga(1-x)P nanowires.

PubMed

Zeng, Xulu; Mourão, Renato T; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T

2018-06-22

To harvest the benefits of III-V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga (1-x) P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H 2 S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 10 16 cm -3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H 2 S as dopant precursors using our parameters is measured to be ∼2 × 10 18 cm -3 , and ∼1 × 10 19 cm -3 , respectively (by Hall effect measurements). Hence, both TESn and H 2 S are suitable precursors for a wide range of n-doping levels in In x Ga (1-x) P nanowires needed for optoelectronic devices, grown via the vapor-liquid-solid mode.

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

NASA Astrophysics Data System (ADS)

Xiang, An; Xu, Xingliang; Zhang, Lin; Li, Zhiqiang; Li, Juntao; Dai, Gang

2018-02-01

The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be interpreted in the framework of pure Fowler-Nordheim tunneling. The temperature-dependent current measurement and density of interface trap estimated from the hi-lo method for the SiO2/4H-SiC interface revealed that the combined current conduction of Fowler-Nordheim and Poole-Frenkel emission is responsible for the current conduction in both pyrogenic and dry oxidized MOS capacitors. Furthermore, the origin of temperature dependent current conduction is the Poole-Frenkel emission via the carbon pair defect trap level at 1.3 eV below the conduction band edge of SiO2. In addition, with the dry oxidized capacitors, the enhanced temperature dependent current above 8 MV/cm is attributed to the PF emission via a trap level at 1.47 eV below the conduction band edge of SiO2, which corresponds to another configuration of a carbon pair defect in SiO2 films.

Impact of electrical conductivity on acid hydrolysis of guar gum under induced electric field.

PubMed

Li, Dandan; Zhang, Yao; Yang, Na; Jin, Zhengyu; Xu, Xueming

2018-09-01

This study aimed to improve induced electric field (IEF)-assisted hydrolysis of polysaccharide by controlling electrical conductivity. As the conductivity of reaction medium was increased, the energy efficiency of IEF was increased because of deceased impedance, as well as enhanced output voltage and temperature, thus the hydrolysis of guar gum (GG) was accelerated under IEF. Changes in weight-average molecular weight (Mw) suggested that IEF-assisted hydrolysis of GG could be described by the first-order kinetics 1/Mw ∝ kt, with the rate constant (k), varying directly with the medium conductivity. Although IEF-assisted hydrolysis largely disrupted the morphological structure of GG, it had no impact on the chemical structure. In comparison to native GG, the steady shear viscosity of hydrolyzed GG dramatically declined while the thermal stability slightly decreased. This study extended the knowledge of electrical conductivity upon IEF-assisted acid hydrolysis of GG and might contribute to a better utilization of IEF for polysaccharide modification. Copyright © 2018 Elsevier Ltd. All rights reserved.

Thermal and Electrical Conductivity Measurements of CDA 510 Phosphor Bronze

NASA Technical Reports Server (NTRS)

Tuttle, James E.; Canavan, Edgar; DiPirro, Michael

2009-01-01

Many cryogenic systems use electrical cables containing phosphor bronze wire. While phosphor bronze's electrical and thermal conductivity values have been published, there is significant variation among different phosphor bronze formulations. The James Webb Space Telescope (JWST) will use several phosphor bronze wire harnesses containing a specific formulation (CDA 510, annealed temper). The heat conducted into the JWST instrument stage is dominated by these harnesses, and approximately half of the harness conductance is due to the phosphor bronze wires. Since the JWST radiators are expected to just keep the instruments at their operating temperature with limited cooling margin, it is important to know the thermal conductivity of the actual alloy being used. We describe an experiment which measured the electrical and thermal conductivity of this material between 4 and 295 Kelvin.

Electrical Switchability and Dry-Wash Durability of Conductive Textiles

PubMed Central

Wu, Bangting; Zhang, Bowu; Wu, Jingxia; Wang, Ziqiang; Ma, Hongjuan; Yu, Ming; Li, Linfan; Li, Jingye

2015-01-01

There is growing interest in the area of conductive textiles in the scientific and industrial community. Herein, we successfully prepared a conductive textile via covalently grafting polyaniline (PANI) onto cotton by a multi-step treatment process. The conductivity of the resultant fabric could be tuned by immersing in water having different pH values. The conductive and insulating properties of the textile could be conveniently switched by alternately immersing in acidic and alkaline bath solutions. Most importantly, the resultant conductive fabrics were able to withstand 40 simulated dry-wash cycles, with almost no decay in the electrical conductivity, indicating their excellent dry-wash durability. The present strategy for fabricating conductive fabrics with excellent switchability of electrical properties and dry-wash durability is expected to provide inspiration for the production of multifunctional conductive textiles for use in hash or sensitive conditions. PMID:26066704

Music through the skin—simple demonstration of human electrical conductivity

NASA Astrophysics Data System (ADS)

Vollmer, M.; Möllmann, K. P.

2016-05-01

The conduction of electricity is an important topic for any basic physics course. Issues of safety often results in teacher demonstration experiments in front of the class or in extremely simple though—for students—not really fascinating (not to say boring) hands on activities for everybody using 1.5 V batteries, cables and light bulbs etc. Here we briefly review some basic facts about conduction of electricity through the human body and report a simple, safe, and awe inspiring electrical conduction experiment which can be performed with little preparation by a teacher involving the whole class of say 20 students.

Electrical Conductivity Distributions in Discrete Fluid-Filled Fractures

NASA Astrophysics Data System (ADS)

James, S. C.; Ahmmed, B.; Knox, H. A.; Johnson, T.; Dunbar, J. A.

2017-12-01

It is commonly asserted that hydraulic fracturing enhances permeability by generating new fractures in the reservoir. Furthermore, it is assumed that in the fractured system predominant flow occurs in these newly formed and pre-existing fractures. Among the phenomenology that remains enigmatic are fluid distributions inside fractures. Therefore, determining fluid distribution and their associated temporal and spatial evolution in fractures is critical for safe and efficient hydraulic fracturing. Previous studies have used both forward modeling and inversion of electrical data to show that a geologic system consisting of fluid filled fractures has a conductivity distribution, where fractures act as electrically conductive bodies when the fluids are more conductive than the host material. We will use electrical inversion for estimating electrical conductivity distribution within multiple fractures from synthetic and measured data. Specifically, we will use data and well geometries from an experiment performed at Blue Canyon Dome in Socorro, NM, which was used as a study site for subsurface technology, engineering, and research (SubTER) funded by DOE. This project used a central borehole for energetically stimulating the system and four monitoring boreholes, emplaced in the cardinal directions. The electrical data taken during this project used 16 temporary electrodes deployed in the stimulation borehole and 64 permanent electrodes in the monitoring wells (16 each). We present results derived using E4D from scenarios with two discrete fractures, thereby discovering the electric potential response of both spatially and temporarily variant fluid distribution and the resolution of fluid and fracture boundaries. These two fractures have dimensions of 3m × 0.01m × 7m and are separated by 1m. These results can be used to develop stimulation and flow tests at the meso-scale that will be important for model validation. Sandia National Laboratories is a multi

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Microstructure characterization of a food-grade U-type microemulsion system by differential scanning calorimetry and electrical conductivity techniques.

PubMed

Zhang, Hui; Taxipalati, Maierhaba; Que, Fei; Feng, Fengqin

2013-12-01

The microstructure transitions of a food-grade U-type microemulsion system containing glycerol monolaurate and propionic acid at a 1:1 mass ratio as oil phase and Tween 80 as surfactant were investigated along a water dilution line at a ratio of 80:20 mass% surfactant/oil phase, based on a previously studied phase diagram. From the water thermal behaviours detected by differential scanning calorimetry, three structural regions are identified along the dilution line. In the first region, all water molecules are confined to the water core of the reverse micelles, leading to the formation of w/o microemulsion. As the water content increases, the water gains mobility, transforms into bicontinuous in the second region, and finally the microemulsion become o/w in the third region. The thermal transition points coincide with the structural phase transitions by electrical conductivity measurements, indicating that the structural transitions occur at 35 and 65 mass% of water along the dilution line. Copyright © 2013 Elsevier Ltd. All rights reserved.

Electrical conductivity of rigid polyurethane foam at high temperature

NASA Astrophysics Data System (ADS)

Johnson, R. T., Jr.

1982-08-01

The electrical conductivity of rigid polyurethane foam, used for electronic encapsulation, was measured during thermal decomposition to 3400 C. At higher temperatures the conductance continues to increase. With pressure loaded electrical leads, sample softening results in eventual contact between electrodes which produces electrical shorting. Air and nitrogen environments show no significant dependence of the conductivity on the atmosphere over the temperature range. The insulating characteristics of polyurethane foam below approx. 2700 C are similar to those for silicone based materials used for electronic case housings and are better than those for phenolics. At higher temperatures (greater than or equal to 2700 C) the phenolics appear to be better insulators to approx. 5000 C and the silicones to approx. 6000 C. It is concluded that the Sylgard 184/GMB encapsulant is a significantly better insulator at high temperature than the rigid polyurethane foam.

Temperature dependence of electrical conduction in PEMA-EMITFSI film

NASA Astrophysics Data System (ADS)

Zain, N. F.; Megat Hasnan, M. M. I.; Sabri, M. F. M.; Said, S. M.; Mohamed, N. S.; Salleh, F.

2018-04-01

Transparent and flexible film of poly (ethyl methacrylate) incorporated with 1-ethyl-3-methyl imidazolium bis(trifluorosulfonyl) imide ionic liquid (PEMA-EMITFSI) with thickness between 100 and 200 µm was fabricated by using solution casting technique. From the ionic transport measurement, it is confirmed that the electrical conduction in PEMA-EMITFSI film is mainly contributed by ionic transport. Moreover, the temperature-dependence of electrical conductivity measurement for 7 days reveals that the electrical properties of PEMA-EMITFSI film could be able to withstand a number of thermal cycles and be lasting for a period of time for potentially used as thermoelectric material through thermal heating.

Electrical safety of conducted electrical weapons relative to requirements of relevant electrical standards.

PubMed

Panescu, Dorin; Nerheim, Max; Kroll, Mark

2013-01-01

TASER(®) conducted electrical weapons (CEW) deliver electrical pulses that can inhibit a person's neuromuscular control or temporarily incapacitate. TASER X26, X26P, and X2 are among CEW models most frequently deployed by law enforcement agencies. The X2 CEW uses two cartridge bays while the X26 and X26P CEWs have only one. The TASER X26P CEW electronic output circuit design is equivalent to that of any one of the two TASER X2 outputs. The goal of this paper was to analyze the nominal electrical outputs of TASER X26, X26P, and X2 CEWs in reference to provisions of several international standards that specify safety requirements for electrical medical devices and electrical fences. Although these standards do not specifically mention CEWs, they are the closest electrical safety standards and hence give very relevant guidance. The outputs of two TASER X26 and two TASER X2 CEWs were measured and confirmed against manufacturer and other published specifications. The TASER X26, X26P, and X2 CEWs electrical output parameters were reviewed against relevant safety requirements of UL 69, IEC 60335-2-76 Ed 2.1, IEC 60479-1, IEC 60479-2, AS/NZS 60479.1, AS/NZS 60479.2 and IEC 60601-1. Prior reports on similar topics were reviewed as well. Our measurements and analyses confirmed that the nominal electrical outputs of TASER X26, X26P and X2 CEWs lie within safety bounds specified by relevant requirements of the above standards.

A Novel Electro Conductive Graphene/Silicon-Dioxide Thermo-Electric Generator

NASA Astrophysics Data System (ADS)

Rahman, Ataur; Abdi, Yusuf

2017-03-01

Thermoelectric generators are all solid-state devices that convert heat energy into electrical energy. The total energy (fuel) supplied to the engine, approximately 30 to 40% is converted into useful mechanical work; whereas the remaining is expelled to the environment as heat through exhaust gases and cooling systems, resulting in serious green house gas (GHG) emission. By converting waste energy into electrical energy is the aim of this manuscript. The technologies reported on waste heat recovery from exhaust gas of internal combustion engines (ICE) are thermo electric generators (TEG) with finned type, Rankine cycle (RC) and Turbocharger. This paper has presented an electro-conductive graphene oxide/silicon-dioxide (GO-SiO2) composite sandwiched by phosphorus (P) and boron (B) doped silicon (Si) TEG to generate electricity from the IC engine exhaust heat. Air-cooling and liquid cooling techniques adopted conventional TEG module has been tested individually for the electricity generation from IC engine exhausts heat at engine speed of 1000-3000rpm. For the engine speed of 7000 rpm, the maximum voltage was recorded as 1.12V and 4.00V for the air-cooling and liquid cooling respectively. The GO-SiO2 simulated result shows that it’s electrical energy generation is about 80% more than conventional TEG for the exhaust temperature of 500°C. The GO-SiO2 composite TEG develops 524W to 1600W at engine speed 1000 to 5000 rpm, which could contribute to reduce the 10-12% of engine total fuel consumption and improve emission level by 20%.

Assembly for electrical conductivity measurements in the piston cylinder device

DOEpatents

Watson, Heather Christine [Dublin, CA; Roberts, Jeffrey James [Livermore, CA

2012-06-05

An assembly apparatus for measurement of electrical conductivity or other properties of a sample in a piston cylinder device wherein pressure and heat are applied to the sample by the piston cylinder device. The assembly apparatus includes a body, a first electrode in the body, the first electrode operatively connected to the sample, a first electrical conductor connected to the first electrode, a washer constructed of a hard conducting material, the washer surrounding the first electrical conductor in the body, a second electrode in the body, the second electrode operatively connected to the sample, and a second electrical conductor connected to the second electrode.

First principles search for n-type oxide, nitride, and sulfide thermoelectrics

PubMed Central

Garrity, Kevin F.

2016-01-01

Oxides have many potentially desirable characteristics for thermoelectric applications, including low cost and stability at high temperatures, but thus far there are few known high zT n-type oxide thermoelectrics. In this work, we use high-throughput first principles calculations to screen transition metal oxides, nitrides, and sulfides for candidate materials with high power factors and low thermal conductivity. We find a variety of promising materials, and we investigate these materials in detail in order to understand the mechanisms that cause them to have high power factors. These materials all combine a high density of states near the Fermi level with dispersive bands, reducing the trade-off between the Seebeck coefficient and the electrical conductivity, but they do so for several different reasons. In addition, our calculations indicate that many of our candidate materials have low thermal conductivity. PMID:27885361

Computational Interpretation of the Relation Between Electric Field and the Applied Current for Cathodic Protection Under Different Conductivity Environments

NASA Astrophysics Data System (ADS)

Kim, Yong-Sang; Ko, Sang-Jin; Lee, Sangkyu; Kim, Jung-Gu

2018-03-01

An interpretation of the relation between the electric field and the applied current for cathodic protection is investigated using a boundary element method simulation. Also, a conductivity-difference environment is set for the interface influence. The variation of the potential distribution is increased with the increase of the applied current and the conductivity difference due to the rejection of the current at the interface. In the case of the electric field, the tendencies of the increasing rate and the applied currents are similar, but the interface influence is different according to the directional component and field type (decrease of E z and increases of E x and E y) due to the directional difference between the electric fields. Also, the change tendencies of the electric fields versus the applied current plots are affected by the polarization curve tendency regarding the polarization type (activation and concentration polarizations in the oxygen-reduction and hydrogen-reduction reactions). This study shows that the underwater electric signature is determined by the polarization behavior of the materials.

Novel transparent conductor with enhanced conductivity: hybrid of silver nanowires and dual-doped graphene

NASA Astrophysics Data System (ADS)

Sohn, Hiesang; Woo, Yun Sung; Shin, Weonho; Yun, Dong-Jin; Lee, Taek; Kim, Felix Sunjoo; Hwang, Jinyoung

2017-10-01

We present hybrid transparent conducting films based on silver nanowires (Ag NWs) and doped graphene through novel dual co-doping method by applying various dopants (HNO3 or Au for p-doping and N2H4 for n-doping) on top and bottom sides of graphene. We systematically investigated the effect of dual-doping on their surface as well as electrical and optical properties of graphene and Ag NW/graphene hybrid films through the combination study with various dopant types (p/p, p/n, n/p, and n/n). We found that the p/p-type dual-doped (p-type dopant: HNO3) graphene and its hybrid formation with Ag NWs appeared to be the most effective in enhancing the electrical properties of conductor (doped graphene with ΔR/R0 = 84% and Ag NW/doped graphene hybrid with ΔR/R0 = 62%), demonstrating doped monolayer graphene with high optical transmittance (TT = 97.4%), and sheet resistance (Rs = 188 Ω/sq.). We also note that dual-doping improved such electrical properties without any significant debilitation of optical transparency of conductors (doped graphene with ΔTT = 0.1% and Ag NW/doped graphene hybrid with ΔTT = 0.4%). In addition, the enhanced conductivity of p-type dual-doped graphene allows a hybrid system to form co-percolating network in which Ag NWs can form a secondary conductive path at grain boundaries of polycrystalline graphene.

Electrical Conductivity Imaging Using Controlled Source Electromagnetics for Subsurface Characterization

NASA Astrophysics Data System (ADS)

Miller, C. R.; Routh, P. S.; Donaldson, P. R.

2004-05-01

Controlled Source Audio-Frequency Magnetotellurics (CSAMT) is a frequency domain electromagnetic (EM) sounding technique. CSAMT typically uses a grounded horizontal electric dipole approximately one to two kilometers in length as a source. Measurements of electric and magnetic field components are made at stations located ideally at least four skin depths away from the transmitter to approximate plane wave characteristics of the source. Data are acquired in a broad band frequency range that is sampled logarithmically from 0.1 Hz to 10 kHz. The usefulness of CSAMT soundings is to detect and map resistivity contrasts in the top two to three km of the Earth's surface. Some practical applications that CSAMT soundings have been used for include mapping ground water resources; mineral/precious metals exploration; geothermal reservoir mapping and monitoring; petroleum exploration; and geotechnical investigations. Higher frequency data can be used to image shallow features and lower frequency data are sensitive to deeper structures. We have a 3D CSAMT data set consisting of phase and amplitude measurements of the Ex and Hy components of the electric and magnetic fields respectively. The survey area is approximately 3 X 5 km. Receiver stations are situated 50 meters apart along a total of 13 lines with 8 lines bearing approximately N60E and the remainder of the lines oriented orthogonal to these 8 lines. We use an unconstrained Gauss-Newton method with positivity to invert the data. Inversion results will consist of conductivity versus depth profiles beneath each receiver station. These 1D profiles will be combined into a 3D subsurface conductivity image. We will include our interpretation of the subsurface conductivity structure and quantify the uncertainties associated with this interpretation.

Thermoelectric transport properties of the n-type impurity Al in PbTe

NASA Astrophysics Data System (ADS)

Jaworski, Christopher M.; Heremans, Joseph P.

2012-01-01

Because Tl and In are known to be resonant levels in IV-VI semiconductors, here we synthesize and electrically characterize lead telluride doped n-type with aluminum. The results show that Al behaves as a normal donor in PbTe, reaching a maximum electron concentration of 4 1019 cm-3. At 300 K, the thermopower, when plotted as function of electron concentration (the Pisarenko relation), follows the calculated line for the conduction band of PbTe, and no enhancement is observed that could indicate the presence of a resonant level.

Dehydration of chlorite explains anomalously high electrical conductivity in the mantle wedges.

PubMed

Manthilake, Geeth; Bolfan-Casanova, Nathalie; Novella, Davide; Mookherjee, Mainak; Andrault, Denis

2016-05-01

Mantle wedge regions in subduction zone settings show anomalously high electrical conductivity (~1 S/m) that has often been attributed to the presence of aqueous fluids released by slab dehydration. Laboratory-based measurements of the electrical conductivity of hydrous phases and aqueous fluids are significantly lower and cannot readily explain the geophysically observed anomalously high electrical conductivity. The released aqueous fluid also rehydrates the mantle wedge and stabilizes a suite of hydrous phases, including serpentine and chlorite. In this present study, we have measured the electrical conductivity of a natural chlorite at pressures and temperatures relevant for the subduction zone setting. In our experiment, we observe two distinct conductivity enhancements when chlorite is heated to temperatures beyond its thermodynamic stability field. The initial increase in electrical conductivity to ~3 × 10(-3) S/m can be attributed to chlorite dehydration and the release of aqueous fluids. This is followed by a unique, subsequent enhancement of electrical conductivity of up to 7 × 10(-1) S/m. This is related to the growth of an interconnected network of a highly conductive and chemically impure magnetite mineral phase. Thus, the dehydration of chlorite and associated processes are likely to be crucial in explaining the anomalously high electrical conductivity observed in mantle wedges. Chlorite dehydration in the mantle wedge provides an additional source of aqueous fluid above the slab and could also be responsible for the fixed depth (120 ± 40 km) of melting at the top of the subducting slab beneath the subduction-related volcanic arc front.

Dehydration of chlorite explains anomalously high electrical conductivity in the mantle wedges

PubMed Central

Manthilake, Geeth; Bolfan-Casanova, Nathalie; Novella, Davide; Mookherjee, Mainak; Andrault, Denis

2016-01-01

Mantle wedge regions in subduction zone settings show anomalously high electrical conductivity (~1 S/m) that has often been attributed to the presence of aqueous fluids released by slab dehydration. Laboratory-based measurements of the electrical conductivity of hydrous phases and aqueous fluids are significantly lower and cannot readily explain the geophysically observed anomalously high electrical conductivity. The released aqueous fluid also rehydrates the mantle wedge and stabilizes a suite of hydrous phases, including serpentine and chlorite. In this present study, we have measured the electrical conductivity of a natural chlorite at pressures and temperatures relevant for the subduction zone setting. In our experiment, we observe two distinct conductivity enhancements when chlorite is heated to temperatures beyond its thermodynamic stability field. The initial increase in electrical conductivity to ~3 × 10−3 S/m can be attributed to chlorite dehydration and the release of aqueous fluids. This is followed by a unique, subsequent enhancement of electrical conductivity of up to 7 × 10−1 S/m. This is related to the growth of an interconnected network of a highly conductive and chemically impure magnetite mineral phase. Thus, the dehydration of chlorite and associated processes are likely to be crucial in explaining the anomalously high electrical conductivity observed in mantle wedges. Chlorite dehydration in the mantle wedge provides an additional source of aqueous fluid above the slab and could also be responsible for the fixed depth (120 ± 40 km) of melting at the top of the subducting slab beneath the subduction-related volcanic arc front. PMID:27386526

Mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogels

DOEpatents

Worsley, Marcus A; Baumann, Theodore F; Satcher, Jr., Joe H

2014-04-01

A method of making a mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel, including the steps of dispersing nanotubes in an aqueous media or other media to form a suspension, adding reactants and catalyst to the suspension to create a reaction mixture, curing the reaction mixture to form a wet gel, drying the wet gel to produce a dry gel, and pyrolyzing the dry gel to produce the mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel. The aerogel is mechanically robust, electrically conductive, and ultralow-density, and is made of a porous carbon material having 5 to 95% by weight carbon nanotubes and 5 to 95% carbon binder.

Mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogels

DOEpatents

Worsley, Marcus A.; Baumann, Theodore F.; Satcher, Jr, Joe H.

2016-07-05

A method of making a mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel, including the steps of dispersing nanotubes in an aqueous media or other media to form a suspension, adding reactants and catalyst to the suspension to create a reaction mixture, curing the reaction mixture to form a wet gel, drying the wet gel to produce a dry gel, and pyrolyzing the dry gel to produce the mechanically robust, electrically conductive ultralow-density carbon nanotube-based aerogel. The aerogel is mechanically robust, electrically conductive, and ultralow-density, and is made of a porous carbon material having 5 to 95% by weight carbon nanotubes and 5 to 95% carbon binder.

Electrically conductive carbon fibre-reinforced composite for aircraft lightning strike protection

NASA Astrophysics Data System (ADS)

Katunin, Andrzej; Krukiewicz, Katarzyna; Turczyn, Roman; Sul, Przemysław; Bilewicz, Marcin

2017-05-01

Aircraft elements, especially elements of exterior fuselage, are subjected to damage caused by lightning strikes. Due to the fact that these elements are manufactured from polymeric composites in modern aircraft, and thus, they cannot conduct electrical charges, the lightning strikes cause burnouts in composite structures. Therefore, the effective lightning strike protection for such structures is highly desired. The solution presented in this paper is based on application of organic conductive fillers in the form of intrinsically conducting polymers and carbon fabric in order to ensure electrical conductivity of whole composite and simultaneously retain superior mechanical properties. The presented studies cover synthesis and manufacturing of the electrically conductive composite as well as its characterization with respect to mechanical and electrical properties. The performed studies indicate that the proposed material can be potentially considered as a constructional material for aircraft industry, which characterizes by good operational properties and low cost of manufacturing with respect to current lightning strike protection materials solutions.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Dosimeter-Type NOx Sensing Properties of KMnO4 and Its Electrical Conductivity during Temperature Programmed Desorption

PubMed Central

Groβ, Andrea; Kremling, Michael; Marr, Isabella; Kubinski, David J.; Visser, Jacobus H.; Tuller, Harry L.; Moos, Ralf

2013-01-01

An impedimetric NOx dosimeter based on the NOx sorption material KMnO4 is proposed. In addition to its application as a low level NOx dosimeter, KMnO4 shows potential as a precious metal free lean NOx trap material (LNT) for NOx storage catalysts (NSC) enabling electrical in-situ diagnostics. With this dosimeter, low levels of NO and NO2 exposure can be detected electrically as instantaneous values at 380 °C by progressive NOx accumulation in the KMnO4 based sensitive layer. The linear NOx sensing characteristics are recovered periodically by heating to 650 °C or switching to rich atmospheres. Further insight into the NOx sorption-dependent conductivity of the KMnO4-based material is obtained by the novel eTPD method that combines electrical characterization with classical temperature programmed desorption (TPD). The NOx loading amount increases proportionally to the NOx exposure time at sorption temperature. The cumulated NOx exposure, as well as the corresponding NOx loading state, can be detected linearly by electrical means in two modes: (1) time-continuously during the sorption interval including NOx concentration information from the signal derivative or (2) during the short-term thermal NOx release. PMID:23549366

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Electrical and optical evaluation of n-type doping in In x Ga(1‑x)P nanowires

NASA Astrophysics Data System (ADS)

Zeng, Xulu; Mourão, Renato T.; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T.

2018-06-01

To harvest the benefits of III–V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga(1‑x)P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H2S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 1016 cm‑3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H2S as dopant precursors using our parameters is measured to be ∼2 × 1018 cm‑3, and ∼1 × 1019 cm‑3, respectively (by Hall effect measurements). Hence, both TESn and H2S are suitable precursors for a wide range of n-doping levels in In x Ga(1‑x)P nanowires needed for optoelectronic devices, grown via the vapor–liquid–solid mode.

Simultaneously Enhancing the Cohesion and Electrical Conductivity of PEDOT:PSS Conductive Polymer Films using DMSO Additives.

PubMed

Lee, Inhwa; Kim, Gun Woo; Yang, Minyang; Kim, Taek-Soo

2016-01-13

Conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) has attracted significant attention as a hole transport and electrode layer that substitutes metal electrodes in flexible organic devices. However, its weak cohesion critically limits the reliable integration of PSS in flexible electronics, which highlights the importance of further investigation of the cohesion of PSS. Furthermore, the electrical conductivity of PSS is insufficient for high current-carrying devices such as organic photovoltaics (OPVs) and organic light emitting diodes (OLEDs). In this study, we improve the cohesion and electrical conductivity through adding dimethyl sulfoxide (DMSO), and we demonstrate the significant changes in the properties that are dependent on the wt % of DMSO. In particular, with the addition of 3 wt % DMSO, the maximum enhancements for cohesion and electrical conductivity are observed where the values increase by 470% and 6050%, respectively, due to the inter-PEDOT bridging mechanism. Furthermore, when OLED devices using the PSS films are fabricated using the 3 wt % DMSO, the display exhibits 18% increased current efficiency.

Electrical conductivity of Gd doped BiFeO3-PbZrO3 composite

NASA Astrophysics Data System (ADS)

Satpathy, Santosh Kumar; Mohanty, Nilaya Kumar; Behera, Ajay Kumar; Behera, Banarji; Nayak, Pratibindhya

2013-09-01

The composite, 0.5(BiGd0.15Fe0.85O3)-0.5(PbZrO3), was synthesized using the solid-state reaction technique. The formation of the compound was confirmed by XRD with an orthorhombic structure at room temperature. The impedance parameters were studied using an impedance analyzer in a wide range of frequency (102-106 Hz) at different temperatures. The Nyquist plot suggests the contribution of bulk effect and a slight indication of grain boundary effect and the bulk resistance decreases with a rise in temperature. The presence of temperature-dependent relaxation process occurs in the material. Electrical modulus reveals the presence of the hopping mechanism in the materials. The value of exponent n, pre-factor A and σ dc were obtained by fitting ac conductivity data with Jonscher's universal power law. The activation energies calculated from the ac conductivity were found to be 0.50, 0.46, 0.44, 0.43, 0.42 and 0.38 eV at 1, 10, 50, 100, 500 kHz and 1 MHz respectively in the temperature region of 110°C-350°C. The dc conductivity was found to increase with the rise in temperature. The activation energy calculated from complex impedance plot and from the fitted Jonscher's power law are very close, which results similar type of charge carrier exist in conduction mechanism of the material.

Electrically conducting ternary amorphous fully oxidized materials and their application

NASA Technical Reports Server (NTRS)

Giauque, Pierre (Inventor); Nicolet, Marc (Inventor); Gasser, Stefan M. (Inventor); Kolawa, Elzbieta A. (Inventor); Cherry, Hillary (Inventor)

2004-01-01

Electrically active devices are formed using a special conducting material of the form Tm--Ox mixed with SiO2 where the materials are immiscible. The immiscible materials are forced together by using high energy process to form an amorphous phase of the two materials. The amorphous combination of the two materials is electrically conducting but forms an effective barrier.

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Sang, Liwen; Ren, Bing; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Tanaka, Atsushi; Cho, Yujin; Harada, Yoshitomo; Nabatame, Toshihide; Sekiguchi, Takashi; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi

2017-09-01

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure of the SBD devices at low voltages is due to the leakage current paths from polygonal pits in the GaN epilayers. It is observed that these polygonal pits originate from carbon impurity accumulation to the dislocations with a screw-type component by microstructure analysis. For the SBD without polygonal pits, no initial failure is observed and the first leakage appeals at the edge of electrodes as a result of electric field concentration. The mechanism of leakage at pits is explained in terms of trap assisted tunneling through fitting current-voltage characteristics.

Analytical solution of electromagnetic radiation by a vertical electric dipole inside the earth and the effect of atmospheric electrical conductivity inhomogeneity

NASA Astrophysics Data System (ADS)

Mosayebidorcheh, Taha; Hosseinibalam, Fahimeh; Hassanzadeh, Smaeyl

2017-11-01

In this paper, the effect of atmospheric electrical conductivity on the electromagnetic waves radiated by a vertical electric dipole located in the earth, near the surface of the earth, is investigated. As far as electrical conductivity is concerned, the atmosphere is divided into three areas, in which the electrical conductivity changes with altitude. The Maxwell equations in these areas are investigated as well. Using the differential transform method, the differential equation is solved in a way that atmospheric electrical conductivity is variable. Solving the problem in these areas indicates that electrical conductivity in the middle and lower areas of atmosphere may be ignored. However, in the upper areas of atmosphere, the magnitude of the magnetic field in the ionosphere at a frequency of 10 kHz at night is five times smaller when electrical conductivity is considered compared to when it is neglected.

Electrical and thermal conductance quantization in nanostructures

NASA Astrophysics Data System (ADS)

Nawrocki, Waldemar

2008-10-01

In the paper problems of electron transport in mesoscopic structures and nanostructures are considered. The electrical conductance of nanowires was measured in a simple experimental system. Investigations have been performed in air at room temperature measuring the conductance between two vibrating metal wires with standard oscilloscope. Conductance quantization in units of G0 = 2e2/h = (12.9 kΩ)-1 up to five quanta of conductance has been observed for nanowires formed in many metals. The explanation of this universal phenomena is the formation of a nanometer-sized wire (nanowire) between macroscopic metallic contacts which induced, due to theory proposed by Landauer, the quantization of conductance. Thermal problems in nanowires are also discussed in the paper.

Influence of dehydration on the electrical conductivity of epidote and implications for high-conductivity anomalies in subduction zones

NASA Astrophysics Data System (ADS)

Hu, Haiying; Dai, Lidong; Li, Heping; Hui, Keshi; Sun, Wenqing

2017-04-01

The anomalously high electrical conductivities ( 0.1 to 1 S/m) in deep mantle wedge regions extensively detected by magnetotelluric studies are often associated with the presence of fluids released from the progressive dehydration of subducting slabs. Epidote minerals are the Ca-Al-rich hydrous silicates with huge stability fields exceeding those of amphibole (>70-80 km) in subducting oceanic crust, and they may therefore be transported to greater depth than amphibole and release water to the mantle wedge. In this study, the electrical conductivities of epidote were measured at 0.5-1.5 GPa and 573-1273 K by using a Solartron-1260 Impedance/Gain-Phase Analyzer in a YJ-3000t multianvil pressure within the frequency range of 0.1-106 Hz. The results demonstrate that the influence of pressure on electrical conductivity of epidote is relatively small compared to that of temperature. The dehydration reaction of epidote is observed through the variation of electrical conductivity around 1073 K, and electrical conductivity reaches up to 1 S/m at 1273 K, which can be attributed to aqueous fluid released from epidote dehydration. After sample dehydration, electrical conductivity noticeably decreases by as much as nearly a log unit compared with that before dehydration, presumably due to a combination of the presence of coexisting mineral phases and aqueous fluid derived from the residual epidote. Taking into account the petrological and geothermal structures of subduction zones, it is suggested that the aqueous fluid produced by epidote dehydration could be responsible for the anomalously high conductivities in deep mantle wedges at depths of 70-120 km, particularly in hot subduction zones.

Fluctuation-enhanced electric conductivity in electrolyte solutions

DOE PAGES

Péraud, Jean-Philippe; Nonaka, Andrew J.; Bell, John B.; ...

2017-09-26

In this work, we analyze the effects of an externally applied electric field on thermal fluctuations for a binary electrolyte fluid. We show that the fluctuating Poisson–Nernst–Planck (PNP) equations for charged multispecies diffusion coupled with the fluctuating fluid momentum equation result in enhanced charge transport via a mechanism distinct from the well-known enhancement of mass transport that accompanies giant fluctuations. Although the mass and charge transport occurs by advection by thermal velocity fluctuations, it can macroscopically be represented as electrodiffusion with renormalized electric conductivity and a nonzero cation–anion diffusion coefficient. Specifically, we predict a nonzero cation–anion Maxwell– Stefan coefficient proportionalmore » to the square root of the salt concentration, a prediction that agrees quantitatively with experimental measurements. The renormalized or effective macroscopic equations are different from the starting PNP equations, which contain no cross-diffusion terms, even for rather dilute binary electrolytes. At the same time, for infinitely dilute solutions the renormalized electric conductivity and renormalized diffusion coefficients are consistent and the classical PNP equations with renormalized coefficients are recovered, demonstrating the self-consistency of the fluctuating hydrodynamics equations. Our calculations show that the fluctuating hydrodynamics approach recovers the electrophoretic and relaxation corrections obtained by Debye–Huckel–Onsager theory, while elucidating the physical origins of these corrections and generalizing straightforwardly to more complex multispecies electrolytes. Lastly, we show that strong applied electric fields result in anisotropically enhanced “giant” velocity fluctuations and reduced fluctuations of salt concentration.« less

Fluctuation-enhanced electric conductivity in electrolyte solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Péraud, Jean-Philippe; Nonaka, Andrew J.; Bell, John B.

In this work, we analyze the effects of an externally applied electric field on thermal fluctuations for a binary electrolyte fluid. We show that the fluctuating Poisson–Nernst–Planck (PNP) equations for charged multispecies diffusion coupled with the fluctuating fluid momentum equation result in enhanced charge transport via a mechanism distinct from the well-known enhancement of mass transport that accompanies giant fluctuations. Although the mass and charge transport occurs by advection by thermal velocity fluctuations, it can macroscopically be represented as electrodiffusion with renormalized electric conductivity and a nonzero cation–anion diffusion coefficient. Specifically, we predict a nonzero cation–anion Maxwell– Stefan coefficient proportionalmore » to the square root of the salt concentration, a prediction that agrees quantitatively with experimental measurements. The renormalized or effective macroscopic equations are different from the starting PNP equations, which contain no cross-diffusion terms, even for rather dilute binary electrolytes. At the same time, for infinitely dilute solutions the renormalized electric conductivity and renormalized diffusion coefficients are consistent and the classical PNP equations with renormalized coefficients are recovered, demonstrating the self-consistency of the fluctuating hydrodynamics equations. Our calculations show that the fluctuating hydrodynamics approach recovers the electrophoretic and relaxation corrections obtained by Debye–Huckel–Onsager theory, while elucidating the physical origins of these corrections and generalizing straightforwardly to more complex multispecies electrolytes. Lastly, we show that strong applied electric fields result in anisotropically enhanced “giant” velocity fluctuations and reduced fluctuations of salt concentration.« less

Fluctuation-enhanced electric conductivity in electrolyte solutions.

PubMed

Péraud, Jean-Philippe; Nonaka, Andrew J; Bell, John B; Donev, Aleksandar; Garcia, Alejandro L

2017-10-10

We analyze the effects of an externally applied electric field on thermal fluctuations for a binary electrolyte fluid. We show that the fluctuating Poisson-Nernst-Planck (PNP) equations for charged multispecies diffusion coupled with the fluctuating fluid momentum equation result in enhanced charge transport via a mechanism distinct from the well-known enhancement of mass transport that accompanies giant fluctuations. Although the mass and charge transport occurs by advection by thermal velocity fluctuations, it can macroscopically be represented as electrodiffusion with renormalized electric conductivity and a nonzero cation-anion diffusion coefficient. Specifically, we predict a nonzero cation-anion Maxwell-Stefan coefficient proportional to the square root of the salt concentration, a prediction that agrees quantitatively with experimental measurements. The renormalized or effective macroscopic equations are different from the starting PNP equations, which contain no cross-diffusion terms, even for rather dilute binary electrolytes. At the same time, for infinitely dilute solutions the renormalized electric conductivity and renormalized diffusion coefficients are consistent and the classical PNP equations with renormalized coefficients are recovered, demonstrating the self-consistency of the fluctuating hydrodynamics equations. Our calculations show that the fluctuating hydrodynamics approach recovers the electrophoretic and relaxation corrections obtained by Debye-Huckel-Onsager theory, while elucidating the physical origins of these corrections and generalizing straightforwardly to more complex multispecies electrolytes. Finally, we show that strong applied electric fields result in anisotropically enhanced "giant" velocity fluctuations and reduced fluctuations of salt concentration.

Fluctuation-enhanced electric conductivity in electrolyte solutions

PubMed Central

Péraud, Jean-Philippe; Nonaka, Andrew J.; Bell, John B.; Donev, Aleksandar; Garcia, Alejandro L.

2017-01-01

We analyze the effects of an externally applied electric field on thermal fluctuations for a binary electrolyte fluid. We show that the fluctuating Poisson–Nernst–Planck (PNP) equations for charged multispecies diffusion coupled with the fluctuating fluid momentum equation result in enhanced charge transport via a mechanism distinct from the well-known enhancement of mass transport that accompanies giant fluctuations. Although the mass and charge transport occurs by advection by thermal velocity fluctuations, it can macroscopically be represented as electrodiffusion with renormalized electric conductivity and a nonzero cation–anion diffusion coefficient. Specifically, we predict a nonzero cation–anion Maxwell–Stefan coefficient proportional to the square root of the salt concentration, a prediction that agrees quantitatively with experimental measurements. The renormalized or effective macroscopic equations are different from the starting PNP equations, which contain no cross-diffusion terms, even for rather dilute binary electrolytes. At the same time, for infinitely dilute solutions the renormalized electric conductivity and renormalized diffusion coefficients are consistent and the classical PNP equations with renormalized coefficients are recovered, demonstrating the self-consistency of the fluctuating hydrodynamics equations. Our calculations show that the fluctuating hydrodynamics approach recovers the electrophoretic and relaxation corrections obtained by Debye–Huckel–Onsager theory, while elucidating the physical origins of these corrections and generalizing straightforwardly to more complex multispecies electrolytes. Finally, we show that strong applied electric fields result in anisotropically enhanced “giant” velocity fluctuations and reduced fluctuations of salt concentration. PMID:28973890

Reversible temperature regulation of electrical and thermal conductivity using liquid–solid phase transitions

PubMed Central

Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

2011-01-01

Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions. PMID:21505445

Reversible temperature regulation of electrical and thermal conductivity using liquid-solid phase transitions.

PubMed

Zheng, Ruiting; Gao, Jinwei; Wang, Jianjian; Chen, Gang

2011-01-01

Reversible temperature tuning of electrical and thermal conductivities of materials is of interest for many applications, including seasonal regulation of building temperature, thermal storage and sensors. Here we introduce a general strategy to achieve large contrasts in electrical and thermal conductivities using first-order phase transitions in percolated composite materials. Internal stress generated during a phase transition modulates the electrical and thermal contact resistances, leading to large contrasts in the electrical and thermal conductivities at the phase transition temperature. With graphite/hexadecane suspensions, the electrical conductivity changes 2 orders of magnitude and the thermal conductivity varies up to 3.2 times near 18 °C. The generality of the approach is also demonstrated in other materials such as graphite/water and carbon nanotube/hexadecane suspensions.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

NASA Astrophysics Data System (ADS)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Experimental and Theoretical Evidences of p-Type Conductivity in Nickel Carbodiimide Nanoparticles with a Delafossite Structure Type.

PubMed

Jiang, Tengfei; Polteau, Baptiste; Farré, Yoann; Cario, Laurent; Latouche, Camille; Pellegrin, Yann; Boujtita, Mohammed; Odobel, Fabrice; Tessier, Franck; Cheviré, François; Jobic, Stéphane

2017-07-17

Nickel carbodiimide (NiCN 2 ) was synthesized using a two-step precipitation-decomposition route leading to a brown powder with gypsum-flower-like morphology and a large specific surface area (75 m 2 /g). This layered material crystallizes in the 2H structure type of delafossite (space group P6 3 /mmc), which is built upon infinite 2 / ∞ [NiN 2 ] layers connected by linear carbodiimide ([N═C═N] 2- ) bridges. An X-ray diffraction Rietveld refinement and thermal analyses pointed out some nickel deficiencies in the material, and band structure calculations carried out on the defect compound predicted p-type conductivity in relation to a slight amount of N 2- . This p-type conductivity was demonstrated by electrochemical impedance spectroscopy measurements, and a flat band potential of 0.90 V vs SCE at pH 9.4 was measured. This value, which is more positive than those of CuGaO 2 and CuCrO 2 delafossite oxides and NiO, prompted us to test NiCN 2 nanoparticles as a photocathode in p-type dye-sensitized solar cells.

Estimates of olivine-basaltic melt electrical conductivity using a digital rock physics approach

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Montési, Laurent G. J.; Zhu, Wen-lu

2015-12-01

Estimates of melt content beneath fast-spreading mid-ocean ridges inferred from magnetotelluric tomography (MT) vary between 0.01 and 0.10. Much of this variation may stem from a lack of understanding of how the grain-scale melt geometry influences the bulk electrical conductivity of a partially molten rock, especially at low melt fraction. We compute bulk electrical conductivity of olivine-basalt aggregates over 0.02 to 0.20 melt fraction by simulating electric current in experimentally obtained partially molten geometries. Olivine-basalt aggregates were synthesized by hot-pressing San Carlos olivine and high-alumina basalt in a solid-medium piston-cylinder apparatus. Run conditions for experimental charges were 1.5 GPa and 1350 °C. Upon completion, charges were quenched and cored. Samples were imaged using synchrotron X-ray micro-computed tomography (μ-CT). The resulting high-resolution, 3-dimensional (3-D) image of the melt distribution constitutes a digital rock sample, on which numerical simulations were conducted to estimate material properties. To compute bulk electrical conductivity, we simulated a direct current measurement by solving the current continuity equation, assuming electrical conductivities for olivine and melt. An application of Ohm's Law yields the bulk electrical conductivity of the partially molten region. The bulk electrical conductivity values for nominally dry materials follow a power-law relationship σbulk = Cσmeltϕm with fit parameters m = 1.3 ± 0.3 and C = 0.66 ± 0.06. Laminar fluid flow simulations were conducted on the same partially molten geometries to obtain permeability, and the respective pathways for electrical current and fluid flow over the same melt geometry were compared. Our results indicate that the pathways for flow fluid are different from those for electric current. Electrical tortuosity is lower than fluid flow tortuosity. The simulation results are compared to existing experimental data, and the potential

Electronic structure and p-type doping of ZnSnN2

NASA Astrophysics Data System (ADS)

Wang, Tianshi; Janotti, Anderson; Ni, Chaoying

ZnSnN2 is a promising solar-cell absorber material composed of earth abundant elements. Little is known about doping, defects, and how the valence and conduction bands in this material align with the bands in other semiconductors. Using density functional theory with the the Heyd-Scuseria-Ernzerhof hybrid functional (HSE06), we investigate the electronic structure of ZnSnN2, its band alignment to other semiconductors, such as GaN and ZnO, the possibility of p-type doping, and the possible causes of the observed unintentional n-type conductivity. We find that the position of the valence-band maximum of ZnSnN2 is 0.55 eV higher than that of GaN, yet the conduction-band minimum is close to that in ZnO. As possible p-type dopants, we explore Li, Na, and K substituting on the Zn site. Finally, we discuss the cause of unintentional n-type conductivity by analyzing the position of the conduction-band minimum with respect to that of GaN and ZnO.

Electrical conduction of organic ultrathin films evaluated by an independently driven double-tip scanning tunneling microscope.

PubMed

Takami, K; Tsuruta, S; Miyake, Y; Akai-Kasaya, M; Saito, A; Aono, M; Kuwahara, Y

2011-11-02

The electrical transport properties of organic thin films within the micrometer scale have been evaluated by a laboratory-built independently driven double-tip scanning tunneling microscope, operating under ambient conditions. The two tips were used as point contact electrodes, and current in the range from 0.1 pA to 100 nA flowing between the two tips through the material can be detected. We demonstrated two-dimensional contour mapping of the electrical resistance on a poly(3-octylthiophene) thin films as shown below. The obtained contour map clearly provided an image of two-dimensional electrical conductance between two point electrodes on the poly(3-octylthiophene) thin film. The conductivity of the thin film was estimated to be (1-8) × 10(-6) S cm(-1). Future prospects and the desired development of multiprobe STMs are also discussed.

Electrical conduction hysteresis in carbon black-filled butyl rubber compounds

NASA Astrophysics Data System (ADS)

Alzamil, M. A.; Alfaramawi, K.; Abboudy, S.; Abulnasr, L.

2018-04-01

Temperature and concentration dependence of electrical resistance of butyl rubber filled with GPF carbon black was carried out. Current-voltage (I-V) characteristics at room-temperature were also investigated. The I-V characteristics show that the behavior is linear at small voltages up to approximately 0.15 V and currents up to 0.05 mA indicating that the conduction mechanism was probably due to electron tunneling from the end of conductive path to the other one under the action of the applied electric field. At higher voltages, a nonlinear behavior was noticed. The nonlinearity was attributed to the joule heating effects. Electrical resistance of the butyl/GPF composites was measured as a function of temperature during heating and cooling cycles from 300 K and upward to a specific temperature. When the specimens were heated up, the resistance was observed to increase continuously with the rise of temperature. However, when the samples were cooled down, the resistance was observed to decrease following a different path. The presence of conduction hysteresis behavior in the resistance-temperature curves during the heating and cooling cycles was then verified. The electrical conduction of the composite system is supposed to follow an activation conduction mechanism. Activation energy was calculated at different filler concentrations for both the heating and cooling processes.

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

NASA Astrophysics Data System (ADS)

Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.; Clinton, Evan A.; Doolittle, W. Alan; Wang, Shuo; Fischer, Alec M.; Ponce, Fernando A.

2015-01-01

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 1019 cm-3 with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 1020 cm-3 show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 1019 cm-3. The p-GaN and p-Al0.11Ga0.89N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3-3.5 V and series resistances of 6-10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.

Iodine doped carbon nanotube cables exceeding specific electrical conductivity of metals

PubMed Central

Zhao, Yao; Wei, Jinquan; Vajtai, Robert; Ajayan, Pulickel M.; Barrera, Enrique V.

2011-01-01

Creating highly electrically conducting cables from macroscopic aggregates of carbon nanotubes, to replace metallic wires, is still a dream. Here we report the fabrication of iodine-doped, double-walled nanotube cables having electrical resistivity reaching ∼10−7 Ω.m. Due to the low density, their specific conductivity (conductivity/weight) is higher than copper and aluminum and is only just below that of the highest specific conductivity metal, sodium. The cables exhibit high current-carrying capacity of 104∼105 A/cm2 and can be joined together into arbitrary length and diameter, without degradation of their electrical properties. The application of such nanotube cables is demonstrated by partly replacing metal wires in a household light bulb circuit. The conductivity variation as a function of temperature for the cables is five times smaller than that for copper. The high conductivity nanotube cables could find a range of applications, from low dimensional interconnects to transmission lines. PMID:22355602

High Electrical Conductivity of Single Metal-Organic Chains.

PubMed

Ares, Pablo; Amo-Ochoa, Pilar; Soler, José M; Palacios, Juan José; Gómez-Herrero, Julio; Zamora, Félix

2018-05-01

Molecular wires are essential components for future nanoscale electronics. However, the preparation of individual long conductive molecules is still a challenge. MMX metal-organic polymers are quasi-1D sequences of single halide atoms (X) bridging subunits with two metal ions (MM) connected by organic ligands. They are excellent electrical conductors as bulk macroscopic crystals and as nanoribbons. However, according to theoretical calculations, the electrical conductance found in the experiments should be even higher. Here, a novel and simple drop-casting procedure to isolate bundles of few to single MMX chains is demonstrated. Furthermore, an exponential dependence of the electrical resistance of one or two MMX chains as a function of their length that does not agree with predictions based on their theoretical band structure is reported. This dependence is attributed to strong Anderson localization originated by structural defects. Theoretical modeling confirms that the current is limited by structural defects, mainly vacancies of iodine atoms, through which the current is constrained to flow. Nevertheless, measurable electrical transport along distances beyond 250 nm surpasses that of all other molecular wires reported so far. This work places in perspective the role of defects in 1D wires and their importance for molecular electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Hamachi, T.; Takeuchi, S.; Tohei, T.; Imanishi, M.; Imade, M.; Mori, Y.; Sakai, A.

2018-04-01

The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001 ] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {10 1 ¯ 1 } facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I-V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I-V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Aerosol jet printed p- and n-type electrolyte-gated transistors with a variety of electrode materials: exploring practical routes to printed electronics.

PubMed

Hong, Kihyon; Kim, Se Hyun; Mahajan, Ankit; Frisbie, C Daniel

2014-11-12

Printing electrically functional liquid inks is a promising approach for achieving low-cost, large-area, additive manufacturing of flexible electronic circuits. To print thin-film transistors, a basic building block of thin-film electronics, it is important to have several options for printable electrode materials that exhibit high conductivity, high stability, and low-cost. Here we report completely aerosol jet printed (AJP) p- and n-type electrolyte-gated transistors (EGTs) using a variety of different electrode materials including highly conductive metal nanoparticles (Ag), conducting polymers (polystyrenesulfonate doped poly(3,4-ethylendedioxythiophene, PEDOT:PSS), transparent conducting oxides (indium tin oxide), and carbon-based materials (reduced graphene oxide). Using these source-drain electrode materials and a PEDOT:PSS/ion gel gate stack, we demonstrated all-printed p- and n-type EGTs in combination with poly(3-hexythiophene) and ZnO semiconductors. All transistor components (including electrodes, semiconductors, and gate insulators) were printed by AJP. Both kinds of devices showed typical p- and n-type transistor characteristics, and exhibited both low-threshold voltages (<2 V) and high hole and electron mobilities. Our assessment suggests Ag electrodes may be the best option in terms of overall performance for both types of EGTs.

Facile synthesis of degradable and electrically conductive polysaccharide hydrogels.

PubMed

Guo, Baolin; Finne-Wistrand, Anna; Albertsson, Ann-Christine

2011-07-11

Degradable and electrically conductive polysaccharide hydrogels (DECPHs) have been synthesized by functionalizing polysaccharide with conductive aniline oligomers. DECPHs based on chitosan (CS), aniline tetramer (AT), and glutaraldehyde were obtained by a facile one-pot reaction by using the amine group of CS and AT under mild conditions, which avoids the multistep reactions and tedious purification involved in the synthesis of degradable conductive hydrogels in our previous work. Interestingly, these one-pot hydrogels possess good film-forming properties, electrical conductivity, and a pH-sensitive swelling behavior. The chemical structure and morphology before and after swelling of the hydrogels were verified by FT-IR, NMR, and SEM. The conductivity of the hydrogels was tuned by adjusting the content of AT. The swelling ratio of the hydrogels was altered by the content of tetraaniline and cross-linker. The hydrogels underwent slow degradation in a buffer solution. The hydrogels obtained by this facile approach provide new possibilities in biomedical applications, for example, biodegradable conductive hydrogels, films, and scaffolds for cardiovascular tissue engineering and controlled drug delivery.

Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

PubMed

Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

2011-09-01

Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

Acidosis slows electrical conduction through the atrio-ventricular node

PubMed Central

Nisbet, Ashley M.; Burton, Francis L.; Walker, Nicola L.; Craig, Margaret A.; Cheng, Hongwei; Hancox, Jules C.; Orchard, Clive H.; Smith, Godfrey L.

2014-01-01

Acidosis affects the mechanical and electrical activity of mammalian hearts but comparatively little is known about its effects on the function of the atrio-ventricular node (AVN). In this study, the electrical activity of the epicardial surface of the left ventricle of isolated Langendorff-perfused rabbit hearts was examined using optical methods. Perfusion with hypercapnic Tyrode's solution (20% CO2, pH 6.7) increased the time of earliest activation (Tact) from 100.5 ± 7.9 to 166.1 ± 7.2 ms (n = 8) at a pacing cycle length (PCL) of 300 ms (37°C). Tact increased at shorter PCL, and the hypercapnic solution prolonged Tact further: at 150 ms PCL, Tact was prolonged from 131.0 ± 5.2 to 174.9 ± 16.3 ms. 2:1 AVN block was common at shorter cycle lengths. Atrial and ventricular conduction times were not significantly affected by the hypercapnic solution suggesting that the increased delay originated in the AVN. Isolated right atrial preparations were superfused with Tyrode's solutions at pH 7.4 (control), 6.8 and 6.3. Low pH prolonged the atrial-Hisian (AH) interval, the AVN effective and functional refractory periods and Wenckebach cycle length significantly. Complete AVN block occurred in 6 out of 9 preparations. Optical imaging of conduction at the AV junction revealed increased conduction delay in the region of the AVN, with less marked effects in atrial and ventricular tissue. Thus acidosis can dramatically prolong the AVN delay, and in combination with short cycle lengths, this can cause partial or complete AVN block and is therefore implicated in the development of brady-arrhythmias in conditions of local or systemic acidosis. PMID:25009505

Acidosis slows electrical conduction through the atrio-ventricular node.

PubMed

Nisbet, Ashley M; Burton, Francis L; Walker, Nicola L; Craig, Margaret A; Cheng, Hongwei; Hancox, Jules C; Orchard, Clive H; Smith, Godfrey L

2014-01-01

Acidosis affects the mechanical and electrical activity of mammalian hearts but comparatively little is known about its effects on the function of the atrio-ventricular node (AVN). In this study, the electrical activity of the epicardial surface of the left ventricle of isolated Langendorff-perfused rabbit hearts was examined using optical methods. Perfusion with hypercapnic Tyrode's solution (20% CO2, pH 6.7) increased the time of earliest activation (Tact) from 100.5 ± 7.9 to 166.1 ± 7.2 ms (n = 8) at a pacing cycle length (PCL) of 300 ms (37°C). Tact increased at shorter PCL, and the hypercapnic solution prolonged Tact further: at 150 ms PCL, Tact was prolonged from 131.0 ± 5.2 to 174.9 ± 16.3 ms. 2:1 AVN block was common at shorter cycle lengths. Atrial and ventricular conduction times were not significantly affected by the hypercapnic solution suggesting that the increased delay originated in the AVN. Isolated right atrial preparations were superfused with Tyrode's solutions at pH 7.4 (control), 6.8 and 6.3. Low pH prolonged the atrial-Hisian (AH) interval, the AVN effective and functional refractory periods and Wenckebach cycle length significantly. Complete AVN block occurred in 6 out of 9 preparations. Optical imaging of conduction at the AV junction revealed increased conduction delay in the region of the AVN, with less marked effects in atrial and ventricular tissue. Thus acidosis can dramatically prolong the AVN delay, and in combination with short cycle lengths, this can cause partial or complete AVN block and is therefore implicated in the development of brady-arrhythmias in conditions of local or systemic acidosis.

Testing and Optimization of Electrically Conductive Spacecraft Coatings

NASA Technical Reports Server (NTRS)

Mell, R. J.; Wertz, G. E.; Edwards, D. L. (Technical Monitor)

2001-01-01

This is the final report discussing the work done for the Space Environments and Effects (SEE) Program. It discusses test chamber design, coating research, and test results on electrically thermal control coatings. These thermal control coatings are being developed to have several orders of magnitude higher electrical conductivity than most available thermal control coatings. Most current coatings tend to have a range in surface resistivity from 1,011 to 1,013 ohms/sq. Historically, spacecraft have had thermal control surfaces composed of dielectric materials of either polymers (paints and metalized films) or glasses (ceramic paints and optical solar reflectors). Very seldom has the thermal control surface of a spacecraft been a metal where the surface would be intrinsically electrically conductive. The poor thermal optical properties of most metals have, in most cases, stopped them from being used as a thermal control surface. Metals low infrared emittance (generally considered poor for thermal control surfaces) and/or solar absorptance, have resulted in the use of various dielectric coatings or films being applied over the substrate materials in order to obtain the required optical properties.

High temperature electrical conductivity of rigid polyurethane foam

NASA Astrophysics Data System (ADS)

Johnson, R. T., Jr.

1984-03-01

The temperature dependence of the electrical conductivity of three rigid polyurethane foams prepared using different formulations was measured to approx. 320 C. The materials exhibit similar conductivity characteristics, showing a pronounced increase in conductivity with increasing temperature. The insulating characteristics to approx. 200 C are better than that for phenolic materials (glass fabric reinforced), and are similar to those for silicone materials (glass microsphere reinforced). At higher temperatures (500 to 600 C), the phenolics and silicones are better insulators.

Concentration and Mobility of Electrically-Conducting Defects in Olivine

NASA Astrophysics Data System (ADS)

Constable, S.; Roberts, J.; Duba, A.

2002-12-01

We have collected measurements of electrical conductivity and thermopower as a function of temperature and oxygen fugacity (f O2) on a sample of San Quintin dunite (95% olivine), and measurements of electrical conductivity equilibration after changes in f O2 on Mt.Porndon lherzolite (65% olivine). Both data sets have been analysed using nonlinear parameter inversion of mathematical models relating conductivity, thermopower, and diffusion kinetics to temperature, f O2, time, and defect concentration and mobility. From the dunite thermopower/conductivity data we are able to estimate the concentration and mobilities of electrically conducting defects. Our model allows electrons, small polarons (Fe+++ on Fe++ sites), and magnesium vacancies (V'' Mg) to contribute to conduction, but only polarons and V'' Mg are required by our data. Polarons dominate conduction below 1300°~C; at this temperature conduction, is equal for the two defects at all f O2 tested. Thermopower measurements allow us to estimate defect concentration independently from mobility, and so we can back out polaron mobility as 12.2x 10-6 exp(-1.05~eV/kT) m2V-1s-1 and magnesium vacancy mobility as 2.72x 10-6 exp(-1.09~eV/kT) m2V-1s-1. Electrical conductivity of the lherzolite, measured as a function of time after changes in the oxygen fugacity of the surrounding CO2/CO atmosphere, is used to infer the diffusivity of the point defects associated with the oxidation reactions. An observed f O2 dependence in the time constants associated with equilibration implies two species of fixed diffusivity, each with f O2-dependent concentrations. Although the rate-limiting step may not necessarily be associated with conducting defects, when time constants are converted to mobilities, the magnitudes and activation energies agree extremely well with the model presented above for the dunite, after one free parameter (effective grain size) is fit at a plausible 1.6~mm diameter. Not only does this study represent one of

Electrical conductivity during incipient melting in the oceanic low-velocity zone.

PubMed

Sifré, David; Gardés, Emmanuel; Massuyeau, Malcolm; Hashim, Leila; Hier-Majumder, Saswata; Gaillard, Fabrice

2014-05-01

The low-viscosity layer in the upper mantle, the asthenosphere, is a requirement for plate tectonics. The seismic low velocities and the high electrical conductivities of the asthenosphere are attributed either to subsolidus, water-related defects in olivine minerals or to a few volume per cent of partial melt, but these two interpretations have two shortcomings. First, the amount of water stored in olivine is not expected to be higher than 50 parts per million owing to partitioning with other mantle phases (including pargasite amphibole at moderate temperatures) and partial melting at high temperatures. Second, elevated melt volume fractions are impeded by the temperatures prevailing in the asthenosphere, which are too low, and by the melt mobility, which is high and can lead to gravitational segregation. Here we determine the electrical conductivity of carbon-dioxide-rich and water-rich melts, typically produced at the onset of mantle melting. Electrical conductivity increases modestly with moderate amounts of water and carbon dioxide, but it increases drastically once the carbon dioxide content exceeds six weight per cent in the melt. Incipient melts, long-expected to prevail in the asthenosphere, can therefore produce high electrical conductivities there. Taking into account variable degrees of depletion of the mantle in water and carbon dioxide, and their effect on the petrology of incipient melting, we calculated conductivity profiles across the asthenosphere for various tectonic plate ages. Several electrical discontinuities are predicted and match geophysical observations in a consistent petrological and geochemical framework. In moderately aged plates (more than five million years old), incipient melts probably trigger both the seismic low velocities and the high electrical conductivities in the upper part of the asthenosphere, whereas in young plates, where seamount volcanism occurs, a higher degree of melting is expected.

Microbial interspecies electron transfer via electric currents through conductive minerals

PubMed Central

Kato, Souichiro; Hashimoto, Kazuhito; Watanabe, Kazuya

2012-01-01

In anaerobic biota, reducing equivalents (electrons) are transferred between different species of microbes [interspecies electron transfer (IET)], establishing the basis of cooperative behaviors and community functions. IET mechanisms described so far are based on diffusion of redox chemical species and/or direct contact in cell aggregates. Here, we show another possibility that IET also occurs via electric currents through natural conductive minerals. Our investigation revealed that electrically conductive magnetite nanoparticles facilitated IET from Geobacter sulfurreducens to Thiobacillus denitrificans, accomplishing acetate oxidation coupled to nitrate reduction. This two-species cooperative catabolism also occurred, albeit one order of magnitude slower, in the presence of Fe ions that worked as diffusive redox species. Semiconductive and insulating iron-oxide nanoparticles did not accelerate the cooperative catabolism. Our results suggest that microbes use conductive mineral particles as conduits of electrons, resulting in efficient IET and cooperative catabolism. Furthermore, such natural mineral conduits are considered to provide ecological advantages for users, because their investments in IET can be reduced. Given that conductive minerals are ubiquitously and abundantly present in nature, electric interactions between microbes and conductive minerals may contribute greatly to the coupling of biogeochemical reactions. PMID:22665802

Electrical conductivity of electrolytes applicable to natural waters from 0 to 100 degrees C

USGS Publications Warehouse

McCleskey, R. Blaine

2011-01-01

The electrical conductivities of 34 electrolyte solutions found in natural waters ranging from (10-4 to 1) mol•kg-1 in concentration and from (5 to 90) °C have been determined. High-quality electrical conductivity data for numerous electrolytes exist in the scientific literature, but the data do not span the concentration or temperature ranges of many electrolytes in natural waters. Methods for calculating the electrical conductivities of natural waters have incorporated these data from the literature, and as a result these methods cannot be used to reliably calculate the electrical conductivity over a large enough range of temperature and concentration. For the single-electrolyte solutions, empirical equations were developed that relate electrical conductivity to temperature and molality. For the 942 molar conductivity determinations for single electrolytes from this study, the mean relative difference between the calculated and measured values was 0.1 %. The calculated molar conductivity was compared to literature data, and the mean relative difference for 1978 measurements was 0.2 %. These data provide an improved basis for calculating electrical conductivity for most natural waters.

Differential and directional effects of perfusion on electrical and thermal conductivities in liver.

PubMed

Podhajsky, Ronald J; Yi, Ming; Mahajan, Roop L

2009-01-01

Two different measurement probes--an electrical probe and a thermal conductivity probe--were designed, fabricated, calibrated, and used in experimental studies on a pig liver model that was designed to control perfusion rates. These probes were fabricated by photolithography and mounted in 1.5-mm diameter catheters. We measured the local impedance and thermal conductivity, respectively, of the artificially perfused liver at different flow rates and, by rotating the probes, in different directions. The results show that both the local electrical conductivity and the thermal conductivity varied location to location, that thermal conductivity increased with decreased distance to large blood vessels, and that significant directional differences exist in both electrical and thermal conductivities. Measurements at different perfusion rates demonstrated that both the local electrical and local thermal conductivities increased linearly with the square root of perfusion rate. These correlations may be of great value to many energy-based biomedical applications.

Electrical conductivity of multi-walled carbon nanotubes-SU8 epoxy composites

NASA Astrophysics Data System (ADS)

Grimaldi, Claudio; Mionić, Marijana; Gaal, Richard; Forró, László; Magrez, Arnaud

2013-06-01

We have characterized the electrical conductivity of the composite which consists of multi-walled carbon nanotubes dispersed in SU8 epoxy resin. Depending on the processing conditions of the epoxy (ranging from non-polymerized to cross-linked), we obtained tunneling and percolating-like regimes of the electrical conductivity of the composites. We interpret the observed qualitative change of the conductivity behavior in terms of reduced separation between the nanotubes induced by polymerization of the epoxy matrix.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

Crystal growth and electrical properties of CuFeO 2 single crystals

NASA Astrophysics Data System (ADS)

Dordor, P.; Chaminade, J. P.; Wichainchai, A.; Marquestaut, E.; Doumerc, J. P.; Pouchard, M.; Hagenmuller, P.; Ammar, A.

1988-07-01

Delafossite-type CuFeO 2 single crystals have been prepared by a flux method: crystals obtained in a Cu crucible with LiBO 2 as flux are n-type whereas those prepared in a Pt crucible with a Cu 2O flux are p-type. Electrical measurements have revealed that n-type crystals exhibit weak anisotropic conductivities with large activation energies and small mobilities (r.t. values perpendicular and parallel to the c-axis: μ⊥ = 5 × 10 -5 and μ‖ = 10 -7 cm -2 V -1 sec -1). p-type crystals, less anisotropic, are characterized by low activation energies and higher mobilities ( μ⊥ = 34 and μ‖ = 8.9 cm 2 V -1 sec -1). A two -conduction-band model is proposed to account for the difference observed between the energy gap value deduced from photoelectrochemical measurements and the activation energy of the electrical conductivity in the intrinsic domain.

Magneto-acousto-electrical Measurement Based Electrical Conductivity Reconstruction for Tissues.

PubMed

Zhou, Yan; Ma, Qingyu; Guo, Gepu; Tu, Juan; Zhang, Dong

2018-05-01

Based on the interaction of ultrasonic excitation and magnetoelectrical induction, magneto-acousto-electrical (MAE) technology was demonstrated to have the capability of differentiating conductivity variations along the acoustic transmission. By applying the characteristics of the MAE voltage, a simplified algorithm of MAE measurement based conductivity reconstruction was developed. With the analyses of acoustic vibration, ultrasound propagation, Hall effect, and magnetoelectrical induction, theoretical and experimental studies of MAE measurement and conductivity reconstruction were performed. The formula of MAE voltage was derived and simplified for the transducer with strong directivity. MAE voltage was simulated for a three-layer gel phantom and the conductivity distribution was reconstructed using the modified Wiener inverse filter and Hilbert transform, which was also verified by experimental measurements. The experimental results are basically consistent with the simulations, and demonstrate that the wave packets of MAE voltage are generated at tissue interfaces with the amplitudes and vibration polarities representing the values and directions of conductivity variations. With the proposed algorithm, the amplitude and polarity of conductivity gradient can be restored and the conductivity distribution can also be reconstructed accurately. The favorable results demonstrate the feasibility of accurate conductivity reconstruction with improved spatial resolution using MAE measurement for tissues with conductivity variations, especially suitable for nondispersive tissues with abrupt conductivity changes. This study demonstrates that the MAE measurement based conductivity reconstruction algorithm can be applied as a new strategy for nondestructive real-time monitoring of conductivity variations in biomedical engineering.

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

PubMed Central

Ran, Fan-Yong; Xiao, Zewen; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

2015-01-01

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 1012 to 1015 cm−3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which results in the electron doping. PMID:26020855

Electrically conductive polyurethanes for biomedical applications

NASA Astrophysics Data System (ADS)

Williams, Charles M.; Nash, M. A.; Poole-Warren, Laura A.

2005-02-01

Electrical interfacing with neural tissue poses significant problems due to host response to the material. This response generally leads to fibrous encapsulation and increased impedance across the electrode. In neural electrodes such as cochlear implants, an elastomeric material like silicone is used as an insulator for the metal electrode. This project ultimately aims to produce a polymer electrode with elastomeric mechanical properties, metal like conductivity and capability. The approach taken was to produce a nanocomposite elastomeric material based on polyurethane (PU) and carbon nanotubes. Carbon nanotubes are ideal due to their high aspect ratio as well as being a ballistic conductor. The choice of PU is based on its elastomeric properties, processability and biocompatibility. Multi-walled nanotubes (MWNTs) were dispersed ultrasonically in various dispersive solutions before being added at up to 20wt% to a 5wt% PU (Pellethane80A) in Dimethylacetamide (DMAc). Films were then solvent cast in a vacuum oven overnight. The resulting films were tested for conductivity using a two-probe technique and mechanically tested using an Instron tensiometer. The percolation threshold (p) of the PU/MWNT films occurred at loadings of between 7 and 10 wt% in this polymer system. Conductivity of the films (above p) was comparable to those for similar systems reported in the literature at up to approximately 7x10-2 Scm-1. Although PU stiffness increased with increased %loading of nanotubes, all composites were highly flexible and maintained elastomeric properties. From these preliminary results we have demonstrated electrical conductivity. So far it is evident that a superior percolation threshold is dependent on the degree of dispersion of the nanotubes. This has prompted work into investigating other preparations of the films, including melt-processing and electrospinning.

Temperature-dependent electrical conductivity of soda-lime glass

NASA Technical Reports Server (NTRS)

Bunnell, L. Roy; Vertrees, T. H.

1993-01-01

The objective of this educational exercise was to demonstrate the difference between the electrical conductivity of metals and ceramics. A list of the equipment and supplies and the procedure for the experiment are presented.

Experimental and numerical investigation of the effective electrical conductivity of nitrogen-doped graphene nanofluids

NASA Astrophysics Data System (ADS)

Mehrali, Mohammad; Sadeghinezhad, Emad; Rashidi, Mohammad Mehdi; Akhiani, Amir Reza; Tahan Latibari, Sara; Mehrali, Mehdi; Metselaar, Hendrik Simon Cornelis

2015-06-01

Electrical conductivity is an important property for technological applications of nanofluids that have not been widely investigated, and few studies have been concerned about the electrical conductivity. In this study, nitrogen-doped graphene (NDG) nanofluids were prepared using the two-step method in an aqueous solution of 0.025 wt% Triton X-100 as a surfactant at several concentrations (0.01, 0.02, 0.04, 0.06 wt%). The electrical conductivity of the aqueous NDG nanofluids showed a linear dependence on the concentration and increased up to 1814.96 % for a loading of 0.06 wt% NDG nanosheet. From the experimental data, empirical models were developed to express the electrical conductivity as functions of temperature and concentration. It was observed that increasing the temperature has much greater effect on electrical conductivity enhancement than increasing the NDG nanosheet loading. Additionally, by considering the electrophoresis of the NDG nanosheets, a straightforward electrical conductivity model is established to modulate and understand the experimental results.

Influence of temperature on the electrical conductivity of leachate from municipal solid waste.

PubMed

Grellier, Solenne; Robain, Henri; Bellier, Gérard; Skhiri, Nathalie

2006-09-01

A bioreactor landfill is designed to manage municipal solid waste, through accelerated waste biodegradation, and stabilisation of the process by means of the controlled addition of liquid, i.e. leachate recirculation. The measurement of electrical resistivity by Electrical Resistivity Tomography (ERT) allows to monitor water content present in the bioreactors. Variations in electrical resistivity are linked to variations in moisture content and temperature. In order to overcome this ambiguity, two laboratory experiments were carried out to establish a relationship between temperature and electrical conductivity: the first set of measurements was made for leachate alone, whereas the second set was made with two different granular media saturated with leachate. Both experiments confirm a well known increase in conductivity of about 2% degrees C(-1). However, higher suspended matter concentrations lead to a lower dependence of electrical conductivity on temperature. Furthermore, for various porous media saturated with an identical leachate, the higher the specific surface of the granular matrix, the lower the effective bulk electrical conductivity. These observations show that a correct understanding of the electrical properties of liquids requires the nature and (in particular) the size of the electrical charge carriers to be taken into account.

Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene.

PubMed

Fei, Ruixiang; Faghaninia, Alireza; Soklaski, Ryan; Yan, Jia-An; Lo, Cynthia; Yang, Li

2014-11-12

Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a device's electrical conductance to its thermal conductance. In this paper, a recently fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal not only that phosphorene possesses a spatially anisotropic electrical conductance, but that its lattice thermal conductance exhibits a pronounced spatial-anisotropy as well. The prominent electrical and thermal conducting directions are orthogonal to one another, enhancing the ratio of these conductances. As a result, ZT may reach the criterion for commercial deployment along the armchair direction of phosphorene at T = 500 K and is close to 1 even at room temperature given moderate doping (∼2 × 10(16) m(-2) or 2 × 10(12) cm(-2)). Ultimately, phosphorene hopefully stands out as an environmentally sound thermoelectric material with unprecedented qualities. Intrinsically, it is a mechanically flexible material that converts heat energy with high efficiency at low temperatures (∼300 K), one whose performance does not require any sophisticated engineering techniques.

Leaching of Conductive Species: Implications to Measurements of Electrical Resistivity

PubMed Central

Spragg, R; Jones, S; Bu, Y; Lu, Y; Bentz, D; Snyder, K; Weiss, J

2017-01-01

Electrical tests have been used to characterize the microstructure of porous materials, the measured electrical response being determined by the contribution of the microstructure (porosity and tortuosity) and the electrical properties of the solution (conductivity of the pore solution) inside the pores of the material. This study has shown how differences in concentration between the pore solution (i.e., the solution in the pores) and the storage solution surrounding the test specimen leads to significant transport (leaching) of the conductive ionic species between the pore solution and the storage solution. Leaching influences the resistivity of the pore solution, thereby influencing electrical measurements on the bulk material from either a surface or uniaxial bulk resistance test. This paper has three main conclusions: 1.) Leaching of conductive species does occur with concentration gradients and that a diffusion based approach can be used to estimate the time scale associated with this change. 2.) Leaching of ions in the pore solution can influence resistivity measurements, and the ratio of surface to uniaxial resistivity can be used as a method to assess the presence of leaching and 3.) An estimation of the magnitude of leaching for standardized tests of cementitious materials. PMID:28584407

Leaching of Conductive Species: Implications to Measurements of Electrical Resistivity.

PubMed

Spragg, R; Jones, S; Bu, Y; Lu, Y; Bentz, D; Snyder, K; Weiss, J

2017-05-01

Electrical tests have been used to characterize the microstructure of porous materials, the measured electrical response being determined by the contribution of the microstructure (porosity and tortuosity) and the electrical properties of the solution (conductivity of the pore solution) inside the pores of the material. This study has shown how differences in concentration between the pore solution (i.e., the solution in the pores) and the storage solution surrounding the test specimen leads to significant transport (leaching) of the conductive ionic species between the pore solution and the storage solution. Leaching influences the resistivity of the pore solution, thereby influencing electrical measurements on the bulk material from either a surface or uniaxial bulk resistance test. This paper has three main conclusions: 1.) Leaching of conductive species does occur with concentration gradients and that a diffusion based approach can be used to estimate the time scale associated with this change. 2.) Leaching of ions in the pore solution can influence resistivity measurements, and the ratio of surface to uniaxial resistivity can be used as a method to assess the presence of leaching and 3.) An estimation of the magnitude of leaching for standardized tests of cementitious materials.

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Hertkorn, J.; Thapa, S. B.; Wunderer, T.; Scholz, F.; Wu, Z. H.; Wei, Q. Y.; Ponce, F. A.; Moram, M. A.; Humphreys, C. J.; Vierheilig, C.; Schwarz, U. T.

2009-07-01

In this study, we present theoretical and experimental results regarding highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures. Based on simulation results, several multiheterostructures were grown by metalorganic vapor phase epitaxy. Using high resolution x-ray diffraction and x-ray reflectometry, the abruptness of the AlGaN/AlN/GaN interfaces could be determined. Using electron holography, the energetic profile of the valence band could be measured, yielding important information about the vertical carrier transport in such multiheterostructures. The electrical properties of the samples were investigated by measuring the lateral (σL) and vertical (σV) conductivity, respectively. The free hole concentration of a sample optimized in terms of lateral conductivity was measured to be 1.2×1019 cm-3 (295 K) with a mobility of 7 cm2/V s, yielding a record σL of 13.7 (Ω cm)-1. Low temperature Hall measurements (77 K) proved the existence of a two-dimensional hole gas at the AlN/GaN interface, as the lateral conductivity could be increased to 30 (Ω cm)-1 and no carrier freeze out was observable. By substituting the p-GaN layer in a light emitting diode (LED) with an AlGaN/GaN multiheterostructure, the overall voltage drop could be reduced by more than 100 mV (j =65 A/cm2). Furthermore improved current spreading on the p-side of LEDs with integrated AlGaN/AlN/GaN multiheterostructures could be proved by μ-electroluminescence, respectively.

Soil permittivity response to bulk electrical conductivity for selected soil water sensors

USDA-ARS?s Scientific Manuscript database

Bulk electrical conductivity can dominate the low frequency dielectric loss spectrum in soils, masking changes in the real permittivity and causing errors in estimated water content. We examined the dependence of measured apparent permittivity (Ka) on bulk electrical conductivity in contrasting soil...

Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena

NASA Astrophysics Data System (ADS)

Latry, O.; Divay, A.; Fadil, D.; Dherbécourt, P.

2017-01-01

Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters. The Lambert function is used to give an explicit expression of the current in the Schottky junction. This function is applied with defined conduction phenomena, whereas other work presented arbitrary (or undefined) conduction mechanisms in such parameters’ extractions. Based upon AlGaN/GaN HEMT structures, extractions of parameters are undergone in order to provide physical characteristics. This work highlights a new expression of current with defined conduction phenomena in order to quantify the physical properties of Schottky contacts in AlGaN/GaN HEMT transistors. Project supported by the French Department of Defense (DGA).

Electric moisture meters for wood

Treesearch

William L. James

1988-01-01

Electric moisture meters for wood measure electric conductance (resistance) or dielectric properties, which vary fairly consistently with moisture content when it is less than 30 percent. The two major classes of electric moisture meters are the conductance (resistance) type and the dielectric type. Conductance-t ype meters use penetrating electrodes that measure in a...

Dual percolation behaviors of electrical and thermal conductivity in metal-ceramic composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, K.; Zhang, Z. D.; Qian, L.

2016-02-08

The thermal and electrical properties including the permittivity spectra in radio frequency region were investigated for copper/yttrium iron garnet (Cu/YIG) composites. Interestingly, the percolation behaviors in electrical and thermal conductivity were obtained due to the formation of copper particles' networks. Beyond the electrical percolation threshold, negative permittivity was observed and plasmon frequency was reduced by several orders of magnitude. With the increase in copper content, the thermal conductivity was gradually increased; meanwhile, the phonon scattering effect and thermal resistance get enhanced, so the rate of increase in thermal conductivity gradually slows down. Hopefully, Cu/YIG composites with tunable electrical and thermalmore » properties have great potentials for electromagnetic interference shielding and electromagnetic wave attenuation.« less

Electrical conductivity of a methane-air burning plasma under the action of weak electric fields

NASA Astrophysics Data System (ADS)

Colonna, G.; Pietanza, L. D.; D'Angola, A.; Laricchiuta, A.; Di Vita, A.

2017-02-01

This paper focuses on the calculation of the electrical conductivity of a methane-air flame in the presence of weak electric fields, solving the Boltzmann equation for free electrons self-consistently coupled with chemical kinetics. The chemical model GRI-Mech 3.0 has been completed with chemi-ionization reactions to model ionization in the absence of fields, and a database of cross sections for electron-impact-induced processes to account for reactions and transitions activated in the flame during discharge. The dependence of plasma properties on the frequency of an oscillating field has been studied under different pressure and gas temperature conditions. Fitting expressions of the electrical conductivity as a function of gas temperature and methane consumption are provided for different operational conditions in the Ansaldo Energia burner.

Comparison of Different Battery Types for Electric Vehicles

NASA Astrophysics Data System (ADS)

Iclodean, C.; Varga, B.; Burnete, N.; Cimerdean, D.; Jurchiş, B.

2017-10-01

Battery powered Electric Vehicles are starting to play a significant role in today’s automotive industry. There are many types of batteries found in the construction of today’s Electric Vehicles, being hard to decide which one fulfils best all the most important characteristics, from different viewpoints, such as energy storage efficiency, constructive characteristics, cost price, safety and utilization life. This study presents the autonomy of an Electric Vehicle that utilizes four different types of batteries: Lithium Ion (Li-Ion), Molten Salt (Na-NiCl2), Nickel Metal Hydride (Ni-MH) and Lithium Sulphur (Li-S), all of them having the same electric energy storage capacity. The novelty of this scientific work is the implementation of four different types of batteries for Electric Vehicles on the same model to evaluate the vehicle’s autonomy and the efficiency of these battery types on a driving cycle, in real time, digitized by computer simulation.

Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Electrical Conductivity of Charged Particle Systems and Zubarev's Nonequilibrium Statistical Operator Method

NASA Astrophysics Data System (ADS)

Röpke, G.

2018-01-01

One of the fundamental problems in physics that are not yet rigorously solved is the statistical mechanics of nonequilibrium processes. An important contribution to describing irreversible behavior starting from reversible Hamiltonian dynamics was given by D. N. Zubarev, who invented the method of the nonequilibrium statistical operator. We discuss this approach, in particular, the extended von Neumann equation, and as an example consider the electrical conductivity of a system of charged particles. We consider the selection of the set of relevant observables. We show the relation between kinetic theory and linear response theory. Using thermodynamic Green's functions, we present a systematic treatment of correlation functions, but the convergence needs investigation. We compare different expressions for the conductivity and list open questions.

Experimental Study on the Electrical Conductivity of Pyroxene Andesite at High Temperature and High Pressure

NASA Astrophysics Data System (ADS)

Hui, KeShi; Dai, LiDong; Li, HePing; Hu, HaiYing; Jiang, JianJun; Sun, WenQing; Zhang, Hui

2017-03-01

The electrical conductivity of pyroxene andesite was in situ measured under conditions of 1.0-2.0 GPa and 673-1073 K using a YJ-3000t multi-anvil press and Solartron-1260 Impedance/Gain-phase analyzer. Experimental results indicate that the electrical conductivities of pyroxene andesite increase with increasing temperature, and the electrical conductivities decrease with the rise of pressure, and the relationship between electrical conductivity ( σ) and temperature ( T) conforms to an Arrhenius relation within a given pressure and temperature range. When temperature rises up to 873-923 K, the electrical conductivities of pyroxene andesite abruptly increase, and the activation enthalpy increases at this range, which demonstrates that pyroxene andesite starts to dehydrate. By the virtue of the activation enthalpy (0.35-0.42 eV) and the activation volume (-6.75 ± 1.67 cm3/mole) which characterizes the electrical properties of sample after dehydration, we consider that the conduction mechanism is the small polaron conduction before and after dehydration, and that the rise of carrier concentration is the most important reason of increased electrical conductivity.

Electrical conductivity of SiO2 at extreme conditions and planetary dynamos

PubMed Central

Scipioni, Roberto; Stixrude, Lars; Desjarlais, Michael P.

2017-01-01

Ab intio molecular dynamics simulations show that the electrical conductivity of liquid SiO2 is semimetallic at the conditions of the deep molten mantle of early Earth and super-Earths, raising the possibility of silicate dynamos in these bodies. Whereas the electrical conductivity increases uniformly with increasing temperature, it depends nonmonotonically on compression. At very high pressure, the electrical conductivity decreases on compression, opposite to the behavior of many materials. We show that this behavior is caused by a novel compression mechanism: the development of broken charge ordering, and its influence on the electronic band gap. PMID:28784773

Electrical Conductivity Mechanism in Unconventional Lead Vanadate Glasses

NASA Astrophysics Data System (ADS)

Abdel-Wahab, F.; Merazga, A.; Montaser, A. A.

2017-03-01

Lead vanadate glasses of the system (V2O5)_{1-x}(PbO)x with x = 0.4, 0.45, 0.5, 0.55, 0.6 have been prepared by the press-quenching technique. The dc (σ (0)) and ac (σ (ω )) electrical conductivities were measured in the temperature range from 150 to 420 K and the frequency range from 102 to 106 Hz. The electrical properties are shown to be sensitive to composition. The experimental results have been analyzed within the framework of different models. The dc conductivity is found to be proportional to Tp with the exponent p ranging from 8.2 to 9.8, suggesting that the transport is determined by a multi-phonon process of weak electron-lattice coupling. The ac conductivity is explained by the percolation path approximation (PPA). In this model, σ (ω ) is closely related to the σ (0) and fitting the experimental data produces a dielectric relaxation time τ in good agreement with the expected value in both magnitude and temperature dependence.

Electrically conductive nano graphite-filled bacterial cellulose composites.

PubMed

Erbas Kiziltas, Esra; Kiziltas, Alper; Rhodes, Kevin; Emanetoglu, Nuri W; Blumentritt, Melanie; Gardner, Douglas J

2016-01-20

A unique three dimensional (3D) porous structured bacterial cellulose (BC) can act as a supporting material to deposit the nanofillers in order to create advanced BC-based functional nanomaterials for various technological applications. In this study, novel nanocomposites comprised of BC with exfoliated graphite nanoplatelets (xGnP) incorporated into the BC matrix were prepared using a simple particle impregnation strategy to enhance the thermal properties and electrical conductivity of the BC. The flake-shaped xGnP particles were well dispersed and formed a continuous network throughout the BC matrix. The temperature at 10% weight loss, thermal stability and residual ash content of the nanocomposites increased at higher xGnP loadings. The electrical conductivity of the composites increased with increasing xGnP loading (attaining values 0.75 S/cm with the addition of 2 wt.% of xGnP). The enhanced conductive and thermal properties of the BC-xGnP nanocomposites will broaden applications (biosensors, tissue engineering, etc.) of BC and xGnP. Copyright © 2015 Elsevier Ltd. All rights reserved.

Evaluation of DC electric field distribution of PPLP specimen based on the measurement of electrical conductivity in LN2

NASA Astrophysics Data System (ADS)

Hwang, Jae-Sang; Seong, Jae-Kyu; Shin, Woo-Ju; Lee, Jong-Geon; Cho, Jeon-Wook; Ryoo, Hee-Suk; Lee, Bang-Wook

2013-11-01

High temperature superconducting (HTS) cable has been paid much attention due to its high efficiency and high current transportation capability, and it is also regarded as eco-friendly power cable for the next generation. Especially for DC HTS cable, it has more sustainable and stable properties compared to AC HTS cable due to the absence of AC loss in DC HTS cable. Recently, DC HTS cable has been investigated competitively all over the world, and one of the key components of DC HTS cable to be developed is a cable joint box considering HVDC environment. In order to achieve the optimum insulation design of the joint box, analysis of DC electric field distribution of the joint box is a fundamental process to develop DC HTS cable. Generally, AC electric field distribution depends on relative permittivity of dielectric materials but in case of DC, electrical conductivity of dielectric material is a dominant factor which determines electric field distribution. In this study, in order to evaluate DC electric field characteristics of the joint box for DC HTS cable, polypropylene laminated paper (PPLP) specimen has been prepared and its DC electric field distribution was analyzed based on the measurement of electrical conductivity of PPLP in liquid nitrogen (LN2). Electrical conductivity of PPLP in LN2 has not been reported yet but it should be measured for DC electric field analysis. The experimental works for measuring electrical conductivity of PPLP in LN2 were presented in this paper. Based on the experimental works, DC electric field distribution of PPLP specimen was fully analyzed considering the steady state and the transient state of DC. Consequently, it was possible to determine the electric field distribution characteristics considering different DC applying stages including DC switching on, DC switching off and polarity reversal conditions.

Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

2017-05-01

Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

Electrochemical properties for high surface area and improved electrical conductivity of platinum-embedded porous carbon nanofibers

NASA Astrophysics Data System (ADS)

An, Geon-Hyoung; Ahn, Hyo-Jin; Hong, Woong-Ki

2015-01-01

Four different types of carbon nanofibers (CNFs) for electrical double-layer capacitors (EDLCs), porous and non-porous CNFs with and without Pt metal nanoparticles, are synthesized by an electrospinning method and their performance in electrical double-layer capacitors (EDLCs) is characterized. In particular, the Pt-embedded porous CNFs (PCNFs) exhibit a high specific surface area of 670 m2 g-1, a large mesopore volume of 55.7%, and a low electrical resistance of 1.7 × 103. The synergistic effects of the high specific surface area with a large mesopore volume, and superior electrical conductivity result in an excellent specific capacitance of 130.2 F g-1, a good high-rate performance, superior cycling durability, and high energy density of 16.9-15.4 W h kg-1 for the performance of EDLCs.

Electrically Conductive Chitosan/Carbon Scaffolds for Cardiac Tissue Engineering

PubMed Central

2015-01-01

In this work, carbon nanofibers were used as doping material to develop a highly conductive chitosan-based composite. Scaffolds based on chitosan only and chitosan/carbon composites were prepared by precipitation. Carbon nanofibers were homogeneously dispersed throughout the chitosan matrix, and the composite scaffold was highly porous with fully interconnected pores. Chitosan/carbon scaffolds had an elastic modulus of 28.1 ± 3.3 KPa, similar to that measured for rat myocardium, and excellent electrical properties, with a conductivity of 0.25 ± 0.09 S/m. The scaffolds were seeded with neonatal rat heart cells and cultured for up to 14 days, without electrical stimulation. After 14 days of culture, the scaffold pores throughout the construct volume were filled with cells. The metabolic activity of cells in chitosan/carbon constructs was significantly higher as compared to cells in chitosan scaffolds. The incorporation of carbon nanofibers also led to increased expression of cardiac-specific genes involved in muscle contraction and electrical coupling. This study demonstrates that the incorporation of carbon nanofibers into porous chitosan scaffolds improved the properties of cardiac tissue constructs, presumably through enhanced transmission of electrical signals between the cells. PMID:24417502

Electrical characterization of FIB processed metal layers for reliable conductive-AFM on ZnO microstructures

NASA Astrophysics Data System (ADS)

Pea, M.; Maiolo, L.; Giovine, E.; Rinaldi, A.; Araneo, R.; Notargiacomo, A.

2016-05-01

We report on the conductive-atomic force microscopy (C-AFM) study of metallic layers in order to find the most suitable configuration for electrical characterization of individual ZnO micro-pillars fabricated by focused ion beam (FIB). The electrical resistance between the probe tip and both as deposited and FIB processed metal layers (namely, Cr, Ti, Au and Al) has been investigated. Both chromium and titanium evidenced a non homogenous and non ohmic behaviour, non negligible scanning probe induced anodic oxidation associated to electrical measurements, and after FIB milling they exhibited significantly higher tip-sample resistance. Aluminium had generally a more apparent non conductive behaviour. Conversely, gold films showed very good tip-sample conduction properties being less sensitive to FIB processing than the other investigated metals. We found that a reliable C-AFM electrical characterization of ZnO microstructures obtained by FIB machining is feasible by using a combination of metal films as top contact layer. An Au/Ti bilayer on top of ZnO was capable to sustain the FIB fabrication process and to form a suitable ohmic contact to the semiconductor, allowing for reliable C-AFM measurement. To validate the consistency of this approach, we measured the resistance of ZnO micropillars finding a linear dependence on the pillar height, as expected for an ohmic conductor, and evaluated the resistivity of the material. This procedure has the potential to be downscaled to nanometer size structures by a proper choice of metal films type and thickness.

The Thermal Electrical Conductivity Probe (TECP) for Phoenix

NASA Technical Reports Server (NTRS)

Zent, Aaron P.; Hecht, Michael H.; Cobos, Doug R.; Campbell, Gaylon S.; Campbell, Colin S.; Cardell, Greg; Foote, Marc C.; Wood, Stephen E.; Mehta, Manish

2009-01-01

The Thermal and Electrical Conductivity Probe (TECP) is a component of the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA) payload on the Phoenix Lander. TECP will measure the temperature, thermal conductivity and volumetric heat capacity of the regolith. It will also detect and quantify the population of mobile H2O molecules in the regolith, if any, throughout the polar summer, by measuring the electrical conductivity of the regolith, as well as the dielectric permittivity. In the vapor phase, TECP is capable of measuring the atmospheric H2O vapor abundance, as well as augment the wind velocity measurements from the meteorology instrumentation. TECP is mounted near the end of the 2.3 m Robotic Arm, and can be placed either in the regolith material or held aloft in the atmosphere. This paper describes the development and calibration of the TECP. In addition, substantial characterization of the instrument has been conducted to identify behavioral characteristics that might affect landed surface operations. The greatest potential issue identified in characterization tests is the extraordinary sensitivity of the TECP to placement. Small gaps alter the contact between the TECP and regolith, complicating data interpretation. Testing with the Phoenix Robotic Arm identified mitigation techniques that will be implemented during flight. A flight model of the instrument was also field tested in the Antarctic Dry Valleys during the 2007-2008 International Polar year. 2

Ground-based instrumentation for measurements of atmospheric conduction current and electric field at the South Pole

NASA Technical Reports Server (NTRS)

Byrne, G. J.; Benbrook, J. R.; Bering, E. A.; Few, A. A.; Morris, G. A.; Trabucco, W. J.; Paschal, E. W.

1993-01-01

Attention is given to instruments constructed to measure the atmospheric conduction current and the atmospheric electric field - two fundamental parameters of the global-electric circuit. The instruments were deployed at the Amundsen-Scott South Pole Station in January 1991 and are designed to operate continuously for up to one year without operator intervention. The atmospheric current flows into one hemisphere, through the electronics where it is measured, and out the other hemisphere. The electric field is measured by a field mill of the rotating dipole type. Sample data from the first days of operation at the South Pole indicate variations in the global circuit over time scales from minutes to hours to days.

Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays.

PubMed

Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

2014-11-07

Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.

Nonlinear conductivity of a holographic superconductor under constant electric field

NASA Astrophysics Data System (ADS)

Zeng, Hua Bi; Tian, Yu; Fan, Zheyong; Chen, Chiang-Mei

2017-02-01

The dynamics of a two-dimensional superconductor under a constant electric field E is studied by using the gauge-gravity correspondence. The pair breaking current induced by E first increases to a peak value and then decreases to a constant value at late times, where the superconducting gap goes to zero, corresponding to a normal conducting phase. The peak value of the current is found to increase linearly with respect to the electric field. Moreover, the nonlinear conductivity, defined as an average of the conductivity in the superconducting phase, scales as ˜E-2 /3 when the system is close to the critical temperature Tc, which agrees with predictions from solving the time-dependent Ginzburg-Landau equation. Away from Tc, the E-2 /3 scaling of the conductivity still holds when E is large.

Magnetoacoustic Tomography with Magnetic Induction for Electrical Conductivity based Tissue imaging

NASA Astrophysics Data System (ADS)

Mariappan, Leo

Electrical conductivity imaging of biological tissue has attracted considerable interest in recent years owing to research indicating that electrical properties, especially electrical conductivity and permittivity, are indicators of underlying physiological and pathological conditions in biological tissue. Also, the knowledge of electrical conductivity of biological tissue is of interest to researchers conducting electromagnetic source imaging and in design of devices that apply electromagnetic energy to the body such as MRI. So, the need for a non-invasive, high resolution impedance imaging method is highly desired. To address this need we have studied the magnetoacoustic tomography with magnetic induction (MAT-MI) method. In MAT-MI, the object is placed in a static and a dynamic magnetic field giving rise to ultrasound waves. The dynamic field induces eddy currents in the object, and the static field leads to generation of acoustic vibrations from Lorentz force on the induced currents. The acoustic vibrations are at the same frequency as the dynamic magnetic field, which is chosen to match the ultrasound frequency range. These ultrasound signals can be measured by ultrasound probes and are used to reconstruct MAT-MI acoustic source images using possible ultrasound imaging approaches .The reconstructed high spatial resolution image is indicative of the object's electrical conductivity contrast. We have investigated ultrasound imaging methods to reliably reconstruct the MAT-MI image under the practical conditions of limited bandwidth and transducer geometry. The corresponding imaging algorithm, computer simulation and experiments are developed to test the feasibility of these different methods. Also, in experiments, we have developed a system with the strong static field of an MRI magnet and a strong pulsed magnetic field to evaluate MAT-MI in biological tissue imaging. It can be seen from these simulations and experiments that conductivity boundary images with

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe.

PubMed

Samanta, Manisha; Pal, Koushik; Pal, Provas; Waghmare, Umesh V; Biswas, Kanishka

2018-05-02

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi 2 ) sandwiched between two Bi 2 Se 3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi 2 Se 3 (κ lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi 2 ) m (Bi 2 Se 3 ) n . Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ lat . These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ lat . Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

Hydroxyapatite Nanowire-Based All-Weather Flexible Electrically Conductive Paper with Superhydrophobic and Flame-Retardant Properties.

PubMed

Chen, Fei-Fei; Zhu, Ying-Jie; Xiong, Zhi-Chao; Dong, Li-Ying; Chen, Feng; Lu, Bing-Qiang; Yang, Ri-Long

2017-11-15

How to survive under various harsh working conditions is a key challenge for flexible electronic devices because their performances are always susceptible to environments. Herein, we demonstrate the novel design and fabrication of a new kind of the all-weather flexible electrically conductive paper based on ultralong hydroxyapatite nanowires (HNs) with unique combination of the superhydrophobic surface, electrothermal effect, and flame retardancy. The superhydrophobic surface with water repellency stabilizes the electrically conductive performance of the paper in water. For example, the electrical current through the superhydrophobic paper onto which water droplets are deposited shows a little change (0.38%), and the electrical performance is steady as well even when the paper is immersed in water for 120 s (just 3.65% change). In addition, the intrinsic electrothermal effect of the electrically conductive paper can efficiently heat the paper to reach a high temperature, for example, 224.25 °C, within 10 s. The synergistic effect between the electrothermal effect and superhydrophobic surface accelerates the melting and removal of ice on the heated electrically conductive paper. Deicing efficiency of the heated superhydrophobic electrically conductive paper is ∼4.5 times that of the unheated superhydrophobic electrically conductive paper and ∼10.4 times that of the heated superhydrophilic paper. More importantly, benefiting from fire-resistant ultralong HNs, thermally stable Ketjen black, and Si-O backbone of poly(dimethylsiloxane), we demonstrate the stable and continuous service of the as-prepared electrically conductive paper in the flame for as long as 7 min. The electrical performance of the electrically conductive paper after flame treatment can maintain as high as 90.60% of the original value. The rational design of the electrically conductive paper with suitable building materials and structure demonstrated here will give an inspiration for the

In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

NASA Astrophysics Data System (ADS)

Ghezzi, C.; Cioce, B.; Magnanini, R.; Parisini, A.

2001-11-01

Results are reported regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells. In the samples, which were grown by molecular beam epitaxy, only the central regions of the Al0.40Ga0.60Sb barriers were Te doped. Low-field, low-temperature Hall measurements in the dark demonstrated the presence in the GaSb wells of a degenerate electron gas with nonzero occupancy only for the lowest miniband. A positive persistent photoconductivity effect, related to the DX character of the Te impurity, was also observed. This behavior enabled the μ electron mobility to be measured at T=10 K as a function of the nS sheet carrier density. Since the experimental data were consistent with a dominant role of the interface roughness scattering in the limiting of μ, the height, Δ, and the lateral size, Λ, of the interface roughness were determined from the analysis of the μ=μ(nS) dependence. Acceptable values of Δ were obtained, consistent with results of structural investigations in single quantum well samples of GaSb/Al0.40Ga0.60Sb [E. Kh. Mukhamedzhanov, C. Bocchi, S. Franchi, A. Baraldi, R. Magnanini, and L. Nasi, J. Appl. Phys. 87, 4234 (2000)].

Analysis of aging time dependent electrical characteristics of AuCu/n-Si/Ti Schottky type diode

NASA Astrophysics Data System (ADS)

Taser, Ahmet; Şenarslan, Elvan; Güzeldir, Betül; Saǧlam, Mustafa

2017-04-01

The purpose of this study is to fabricate AuCu/n-Si/Ti Schottky type diode and determine the effects of aging time on the diode parameters such as ideality factor, barrier height, series resistance, interface state density and rectification ratio. Gold and copper ratios in the gold-copper alloy used in making the Schottky contact were taken as equal. Schottky barrier contact using AuCu alloy and ohmic contact using Ti metal were made on n-Si by thermal evaporation. The electrical characterization of the AuCu/n-Si/Ti diode was made immediately based on the aging time at room temperature in dark conditions. The I-V measurements were also repeated 1, 7, 15, 30 and 90 days after fabrication of the diode in order to observe the effect of the aging time. The determined values of the ideality factor are in the range of 1,21 (for immediately)-1,075 (for 90 days). In the same way, values of the barrier height are also in the range of 0,566 eV (for immediately)-0,584 eV (for 90 days). From the I-V characteristics, it is seen that the diode appears to have a good rectification character.

Experimental characterization and numerical modeling of tissue electrical conductivity during pulsed electric fields for irreversible electroporation treatment planning.

PubMed

Neal, Robert E; Garcia, Paulo A; Robertson, John L; Davalos, Rafael V

2012-04-01

Irreversible electroporation is a new technique to kill cells in targeted tissue, such as tumors, through a nonthermal mechanism using electric pulses to irrecoverably disrupt the cell membrane. Treatment effects relate to the tissue electric field distribution, which can be predicted with numerical modeling for therapy planning. Pulse effects will change the cell and tissue properties through thermal and electroporation (EP)-based processes. This investigation characterizes these changes by measuring the electrical conductivity and temperature of ex vivo renal porcine tissue within a single pulse and for a 200 pulse protocol. These changes are incorporated into an equivalent circuit model for cells and tissue with a variable EP-based resistance, providing a potential method to estimate conductivity as a function of electric field and pulse length for other tissues. Finally, a numerical model using a human kidney volumetric mesh evaluated how treatment predictions vary when EP- and temperature-based electrical conductivity changes are incorporated. We conclude that significant changes in predicted outcomes will occur when the experimental results are applied to the numerical model, where the direction and degree of change varies with the electric field considered.

Calibration of a modified temperature-light intensity logger for quantifying water electrical conductivity

NASA Astrophysics Data System (ADS)

Gillman, M. A.; Lamoureux, S. F.; Lafrenière, M. J.

2017-09-01

The Stream Temperature, Intermittency, and Conductivity (STIC) electrical conductivity (EC) logger as presented by Chapin et al. (2014) serves as an inexpensive (˜50 USD) means to assess relative EC in freshwater environments. This communication demonstrates the calibration of the STIC logger for quantifying EC, and provides examples from a month long field deployment in the High Arctic. Calibration models followed multiple nonlinear regression and produced calibration curves with high coefficient of determination values (R2 = 0.995 - 0.998; n = 5). Percent error of mean predicted specific conductance at 25°C (SpC) to known SpC ranged in magnitude from -0.6% to 13% (mean = -1.4%), and mean absolute percent error (MAPE) ranged from 2.1% to 13% (mean = 5.3%). Across all tested loggers we found good accuracy and precision, with both error metrics increasing with increasing SpC values. During 10, month-long field deployments, there were no logger failures and full data recovery was achieved. Point SpC measurements at the location of STIC loggers recorded via a more expensive commercial electrical conductivity logger followed similar trends to STIC SpC records, with 1:1.05 and 1:1.08 relationships between the STIC and commercial logger SpC values. These results demonstrate that STIC loggers calibrated to quantify EC are an economical means to increase the spatiotemporal resolution of water quality investigations.

CaMn(1-x)Nb(x)O3 (x < or = 0.08) perovskite-type phases as promising new high-temperature n-type thermoelectric materials.

PubMed

Bocher, L; Aguirre, M H; Logvinovich, D; Shkabko, A; Robert, R; Trottmann, M; Weidenkaff, A

2008-09-15

Perovskite-type CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a "chimie douce" (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn(4+)/Mn(3+)) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S(1000K) = -180 microV K(-1), rho(1000K) = 16.8 mohms cm, and PF > 1.90 x 10(-4) W m(-1) K(-2) for 450 K < T < 1070 K). Furthermore, lower thermal conductivity values are achieved for the SC-derived phases (kappa < 1 W m(-1) K(-1)) compared to the SSR compounds. High power factors combined with low thermal conductivity (leading to ZT values > 0.3) make these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures.

Distribution of E/N and N/e/ in a cross-flow electric discharge laser. [electric field to neutral gas density and electron number density

NASA Technical Reports Server (NTRS)

Dunning, J. W., Jr.; Lancashire, R. B.; Manista, E. J.

1976-01-01

Measurements have been conducted of the effect of the convection of ions and electrons on the discharge characteristics in a large scale laser. The results are presented for one particular distribution of ballast resistance. Values of electric field, current density, input power density, ratio of electric field to neutral gas density (E/N), and electron number density were calculated on the basis of measurements of the discharge properties. In a number of graphs, the E/N ratio, current density, power density, and electron density are plotted as a function of row number (downstream position) with total discharge current and gas velocity as parameters. From the dependence of the current distribution on the total current, it appears that the electron production in the first two rows significantly affects the current flowing in the succeeding rows.

Electrical conductivity modification using silver nano particles of Jatropha Multifida L. and Pterocarpus Indicus w. extracts films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diantoro, Markus, E-mail: markus.diantoro.fmipa@um.ac.id; Hidayati, Nisfi Nahari Sani; Latifah, Rodatul

Natural polymers can be extracted from leaf or stem of plants. Pterocarpus Indicus W. (PIW) and Jatropha Multifida L. (JIL) plants are good candidate as natural polymer sources. PIW and JIW polymers contain chemical compound so-called flavonoids which has C{sub 6}-C{sub 3}-C{sub 6} carbons conjugated configuration. The renewable type of polymer as well as their abundancy of flavonoid provide us to explore their physical properties. A number of research have been reported related to broad synthesis method and mechanical properties. So far there is no specific report of electrical conductivity associated to PIW and JIL natural polymers. In order tomore » obtain electrical conductivity and its crystallinity of the extracted polymer films, it was induced on them a various fraction of silver nano particles. The film has been prepared by means of spin coating method on nickel substrate. It was revealed that FTIR spectra confirm the existing of rutine flavonoid. The crystallinity of the samples increase from 0.66%, to 4.11% associated to the respective various of silver fractions of 0.1 M to 0.5 M. SEM images show that there are some grains of silver in the film. The nature of electric conductivity increases a long with the addition of silver. The electrical conductivity increase significantly from 3.22 S/cm, to 542.85 S/cm. On the other hand, PIW films also shows similar trends that increase of Ag induce the increase its crystallinity as well as its electrical conductivity at semiconducting level. This result opens a prospective research and application of the green renewable polymer as optoelectronic materials.« less

Electrical conductivity modification using silver nano particles of Jatropha Multifida L. and Pterocarpus Indicus w. extracts films

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Hidayati, Nisfi Nahari Sani; Latifah, Rodatul; Fuad, Abdulloh; Nasikhudin, Sujito, Hidayat, Arif

2016-03-01

Natural polymers can be extracted from leaf or stem of plants. Pterocarpus Indicus W. (PIW) and Jatropha Multifida L. (JIL) plants are good candidate as natural polymer sources. PIW and JIW polymers contain chemical compound so-called flavonoids which has C6-C3-C6 carbons conjugated configuration. The renewable type of polymer as well as their abundancy of flavonoid provide us to explore their physical properties. A number of research have been reported related to broad synthesis method and mechanical properties. So far there is no specific report of electrical conductivity associated to PIW and JIL natural polymers. In order to obtain electrical conductivity and its crystallinity of the extracted polymer films, it was induced on them a various fraction of silver nano particles. The film has been prepared by means of spin coating method on nickel substrate. It was revealed that FTIR spectra confirm the existing of rutine flavonoid. The crystallinity of the samples increase from 0.66%, to 4.11% associated to the respective various of silver fractions of 0.1 M to 0.5 M. SEM images show that there are some grains of silver in the film. The nature of electric conductivity increases a long with the addition of silver. The electrical conductivity increase significantly from 3.22 S/cm, to 542.85 S/cm. On the other hand, PIW films also shows similar trends that increase of Ag induce the increase its crystallinity as well as its electrical conductivity at semiconducting level. This result opens a prospective research and application of the green renewable polymer as optoelectronic materials.

Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

NASA Astrophysics Data System (ADS)

Vicentis Caparroz, Luis Felipe; Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Ghedini Der Agopian, Paula

2018-06-01

This paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA, transistor efficiency and the intrinsic gain voltage (AV) for 3 different channel widths. The p-channel devices showed a greater immunity to radiation than the n-channel ones, when considering the basic parameters thanks to the back conduction turn-off tendency, while from the analog parameters point of view, both transistor types presented a similar response to proton radiation at strong inversion.

Soil water sensor response to bulk electrical conductivity

USDA-ARS?s Scientific Manuscript database

Soil water monitoring using electromagnetic (EM) sensors can facilitate observations of water content at high temporal and spatial resolutions. These sensors measure soil dielectric permittivity (Ka) which is largely a function of volumetric water content. However, bulk electrical conductivity BEC c...

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

Challenges associated with nerve conduction block using kilohertz electrical stimulation

NASA Astrophysics Data System (ADS)

Patel, Yogi A.; Butera, Robert J.

2018-06-01

Neuromodulation therapies, which electrically stimulate parts of the nervous system, have traditionally attempted to activate neurons or axons to restore function or alleviate disease symptoms. In stark contrast to this approach is inhibiting neural activity to relieve disease symptoms and/or restore homeostasis. One potential approach is kilohertz electrical stimulation (KES) of peripheral nerves—which enables a rapid, reversible, and localized block of conduction. This review highlights the existing scientific and clinical utility of KES and discusses the technical and physiological challenges that must be addressed for successful translation of KES nerve conduction block therapies.

High Resolution Global Electrical Conductivity Variations in the Earth's Mantle

NASA Astrophysics Data System (ADS)

Kelbert, A.; Sun, J.; Egbert, G. D.

2013-12-01

Electrical conductivity of the Earth's mantle is a valuable constraint on the water content and melting processes. In Kelbert et al. (2009), we obtained the first global inverse model of electrical conductivity in the mantle capable of providing constraints on the lateral variations in mantle water content. However, in doing so we had to compromise on the problem complexity by using the historically very primitive ionospheric and magnetospheric source assumptions. In particular, possible model contamination by the auroral current systems had greatly restricted our use of available data. We have now addressed this problem by inverting for the external sources along with the electrical conductivity variations. In this study, we still focus primarily on long period data that are dominated by quasi-zonal source fields. The improved understanding of the ionospheric sources allows us to invert the magnetic fields directly, without a correction for the source and/or the use of transfer functions. It allows us to extend the period range of available data to 1.2 days - 102 days, achieving better sensitivity to the upper mantle and transition zone structures. Finally, once the source effects in the data are accounted for, a much larger subset of observatories may be used in the electrical conductivity inversion. Here, we use full magnetic fields at 207 geomagnetic observatories, which include mid-latitude, equatorial and high latitude data. Observatory hourly means from the years 1958-2010 are employed. The improved quality and spatial distribution of the data set, as well as the high resolution modeling and inversion using degree and order 40 spherical harmonics mapped to a 2x2 degree lateral grid, all contribute to the much improved resolution of our models, representing a conceptual step forward in global electromagnetic sounding. We present a fully three-dimensional, global electrical conductivity model of the Earth's mantle as inferred from ground geomagnetic

Electrical Conductivity Response of Poly(Phenylene-vinylene)/Zeolite Composites Exposed to Ammonium Nitrate