Direct synthesis of vertically aligned ZnO nanowires on FTO substrates using a CVD method and the improvement of photovoltaic performance

PubMed Central

2012-01-01

In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those fabricated using transferred ZnO nanowires. Dependence of the cell performance on nanowire length and annealing temperature was also examined. This synthesis method provided a straightforward, one-step CVD process to grow relatively long ZnO nanowires and avoided subsequent nanowire transfer process, which simplified DSSC fabrication and improved cell performance. PMID:22673046

Enhanced photoluminescence and field-emission behavior of vertically well aligned arrays of In-doped ZnO Nanowires.

PubMed

Ahmad, Mashkoor; Sun, Hongyu; Zhu, Jing

2011-04-01

Vertically oriented well-aligned Indium doped ZnO nanowires (NWs) have been successfully synthesized on Au-coated Zn substrate by controlled thermal evaporation. The effect of indium dopant on the optical and field-emission properties of these well-aligned ZnO NWs is investigated. The doped NWs are found to be single crystals grown along the c-axis. The composition of the doped NWs is confirmed by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and X-ray photospectroscopy (XPS). The photoluminescence (PL) spectra of doped NWs having a blue-shift in the UV region show a prominent tuning in the optical band gap, without any significant peak relating to intrinsic defects. The turn-on field of the field emission is found to be ∼2.4 V μm(-1) and an emission current density of 1.13 mA cm(-2) under the field of 5.9 V μm(-1). The field enhancement factor β is estimated to be 9490 ± 2, which is much higher than that of any previous report. Furthermore, the doped NWs exhibit good emission current stability with a variation of less than 5% during a 200 s under a field of 5.9 V μm(-1). The superior field emission properties are attributed to the good alignment, high aspect ratio, and better crystallinity of In-doped NWs. © 2011 American Chemical Society

A ZnO nanowire resistive switch

NASA Astrophysics Data System (ADS)

Karthik, K. R. G.; Ramanujam Prabhakar, Rajiv; Hai, L.; Batabyal, Sudip K.; Huang, Y. Z.; Mhaisalkar, S. G.

2013-09-01

An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented.

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

2018-06-01

In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

Sodium doping in ZnO crystals

NASA Astrophysics Data System (ADS)

Parmar, N. S.; Lynn, K. G.

2015-01-01

ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

The effect of Cu doping on the mechanical and optical properties of zinc oxide nanowires synthesized by hydrothermal route.

PubMed

Robak, Elżbieta; Coy, Emerson; Kotkowiak, Michał; Jurga, Stefan; Załęski, Karol; Drozdowski, Henryk

2016-04-29

Zinc oxide (ZnO) is a wide-bandgap semiconductor material with applications in a variety of fields such as electronics, optoelectronic and solar cells. However, much of these applications demand a reproducible, reliable and controllable synthesis method that takes special care of their functional properties. In this work ZnO and Cu-doped ZnO nanowires are obtained by an optimized hydrothermal method, following the promising results which ZnO nanostructures have shown in the past few years. The morphology of as-prepared and copper-doped ZnO nanostructures is investigated by means of scanning electron microscopy and high resolution transmission electron microscopy. X-ray diffraction is used to study the impact of doping on the crystalline structure of the wires. Furthermore, the mechanical properties (nanoindentation) and the functional properties (absorption and photoluminescence measurements) of ZnO nanostructures are examined in order to assess their applicability in photovoltaics, piezoelectric and hybrids nanodevices. This work shows a strong correlation between growing conditions, morphology, doping and mechanical as well as optical properties of ZnO nanowires.

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

DOE PAGES

Sapkota, Keshab R.; Chen, Weimin; Maloney, F. Scott; ...

2016-10-14

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carrier concentration caused the MR to decrease, and eventually an MR sign reversal from positive to negative was observed. An MR change from a maximum positive value of 25% to a minimum negative value of 7% was observed at 5 K and 50 KOe. The observed MR behavior wasmore » modeled by considering combined effects of quantum correction to carrier conductivity and bound magnetic polarons. Finally, this work could provide important insights into the mechanisms that govern magnetotransport in dilute magnetic oxides, and it also demonstrated an effective approach to manipulating magnetoresistance in these materials that have important spintronic applications.« less

Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals

PubMed Central

Parmar, Narendra S.; Yim, Haena; Choi, Ji-Won

2017-01-01

Stable p-type conduction in ZnO has been a long time obstacle in utilizing its full potential such as in opto-electronic devices. We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm−3 as doping temperature increases to 1200 °C. Electronic infrared absorption was measured for Na-acceptors. Absorption bands were observed near (0.20–0.24) eV. Absorption bands blue shifted by 0.04 eV when doped at 1200 °C giving rise to shallow acceptor level. NaZn band movements as a function of doping temperature are also seen in Photoluminescence emission (PL), Photoluminescence excitation (PLE) and UV-Vis transmission measurements. Variable temperature Hall measurements show stable p-type conduction with hole binding energy ~0.18 eV in ZnO samples that were Na-doped at 1200 °C. PMID:28272444

Investigation of ZnO Nanowire Interfaces for Multi-Scale Composites

DTIC Science & Technology

2012-03-06

growth of zinc oxide ( ZnO ) nanowires on the surface of the...through the growth of zinc oxide ( ZnO ) nanowires on the surface of the reinforcing fibers. The nanowires functionally grade the interface, improve bonding...bulk composite. This has been accomplished through the growth of zinc oxide ( ZnO ) nanowires on the surface of the reinforcing fibers. ZnO

Application of Chemical Doping and Architectural Design Principles To Fabricate Nanowire Co2Ni3ZnO8 Arrays for Aqueous Asymmetric Supercapacitors.

PubMed

Liu, Qi; Yang, Bin; Liu, Jingyuan; Yuan, Yi; Zhang, Hongsen; Liu, Lianhe; Wang, Jun; Li, Rumin

2016-08-10

Electrode materials derived from transition metal oxides have a serious problem of low electron transfer rate, which restricts their practical application. However, chemically doped graphene transforms the chemical bonding configuration to enhance electron transfer rate and, therefore, facilitates the successful fabrication of Co2Ni3ZnO8 nanowire arrays. In addition, the Co2Ni3ZnO8 electrode materials, considered as Ni and Zn ions doped into Co3O4, have a high electron transfer rate and electrochemical response capability, because the doping increases the degree of crystal defect and reaction of Co/Ni ions with the electrolyte. Hence, the Co2Ni3ZnO8 electrode exhibits a high rate property and excellent electrochemical cycle stability, as determined by electrochemical analysis of the relationship between specific capacitance, IR drop, Coulomb efficiency, and different current densities. From the results of a three-electrode system of electrochemical measurement, the Co2Ni3ZnO8 electrode demonstrates a specific capacitance of 1115 F g(-1) and retains 89.9% capacitance after 2000 cycles at a current density of 4 A g(-1). The energy density of the asymmetric supercapacitor (AC//Co2Ni3ZnO8) is 54.04 W h kg(-1) at the power density of 3200 W kg(-1).

Quantum-interference transport through surface layers of indium-doped ZnO nanowires.

PubMed

Chiu, Shao-Pin; Lu, Jia Grace; Lin, Juhn-Jong

2013-06-21

We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a 'core-shell-like structure' in individual IZO NWs, where an outer shell of thickness t (~15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length Lφ gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where Lφ approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where Lφ approximately equals t (doped ZnO NWs. This work also strongly

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

NASA Astrophysics Data System (ADS)

Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

2016-02-01

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

ZnO nanowires for tunable near-UV/blue LED

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno

2012-02-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. Markedly improved performances are expected from nanostructured active layers for light emission. Nanowires can act as direct waveguides and favor light extraction without the use of lenses and reflectors. Moreover, the use of wires avoids the presence of grain boundaries and then the emission efficiency should be boosted by the absence of non-radiative recombinations at the joint defects. Electrochemical deposition technique was used for the preparation of ZnO-NWs based light emitters. Nanowires of high structural and optical quality have been epitaxially grown on p-GaN single crystalline films substrates. We have shown that the emission is directional with a wavelength that was tuned and red-shifted toward the visible region by doping with Cu in ZnO NWs.

Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

PubMed

Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

2010-05-18

In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

Toward blue emission in ZnO based LED

NASA Astrophysics Data System (ADS)

Viana, Bruno; Pauporté, Thierry; Lupan, Oleg; Le Bahers, Tangui; Ciofini, Ilaria

2012-03-01

The bandgap engineering of ZnO nanowires by doping is of great importance for tunable light emitting diode (LED) applications. We present a combined experimental and computational study of ZnO doping with Cd or Cu atoms in the nanomaterial. Zn1-xTMxO (TM=Cu, Cd) nanowires have been epitaxially grown on magnesium-doped p-GaN by electrochemical deposition. The Zn1-xTMxO/p-GaN heterojunction was integrated in a LED structure. Nanowires act as the light emitters and waveguides. At room temperature, TM-doped ZnO based LEDs exhibit low-threshold emission voltage and electroluminescence emission shifted from ultraviolet to violet-blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the transition metal (TM) content in the ZnO nanomaterial and the shift is discussed, including insights from DFT computational investigations.

Structure and Electric Conduction in Pulsed Laser-Deposited ZnO Thin Films Individually Doped with N, P, or Na

NASA Astrophysics Data System (ADS)

Jiao, D. L.; Zhong, X. C.; Qiu, W. Q.; Zhang, H.; Liu, Z. W.; Zhang, G. Q.

2018-03-01

N-, P-, and Na-doped ZnO films with c-axis orientation were produced by pulsed laser deposition using N2O or O2 as the reaction gas. The effects of deposition temperature and deposition pressure on the lattice structure, morphology, and electric conduction have been investigated. High gas pressure leads to large-sized grains with large grain barriers, which cause a reduced mobility. P acts as an acceptor and the number of compensating defects in the P-doped film is reduced under high O2 pressure. Na also acts as an acceptor, and the effects of high temperature on Na-doped films are encouraging as the solubility of the dopant is high. However, high temperature may cause less incorporation of N and P in the film. In the present work, p-type conduction has not been obtained in N- and P-doped films despite a wide range of processing parameters employed. Na-doped films display an increasing trend towards p-type films at high temperatures and high O2 pressures. These results provide an insight on how these dopants behave in ZnO films and indicate that the careful selection of the deposition conditions is necessary in order to obtain p-type films by pulsed laser deposition.

Hydrothermal Growth of ZnO Nanowires on UV-Nanoimprinted Polymer Structures.

PubMed

Park, Sooyeon; Moore, Sean A; Lee, Jaejong; Song, In-Hyouk; Farshchian, Bahador; Kim, Namwon

2018-05-01

Integration of zinc oxide (ZnO) nanowires on miniaturized polymer structures can broaden its application in multi-functional polymer devices by taking advantages of unique physical properties of ZnO nanowires and recent development of polymer microstructures in analytical systems. In this paper, we demonstrate the hydrothermal growth of ZnO nanowires on polymer microstructures fabricated by UV nanoimprinting lithography (NIL) using a polyurethane acrylate (PUA). Since PUA is a siloxane-urethane-acrylate compound containing the alpha-hydroxyl ketone, UV-cured PUA include carboxyl groups, which inhibit and suppress the nucleation and growth of ZnO nanowires on polymer structures. The presence of carboxyl groups in UV-cured PUA was substantiated by Fourier transform infrared spectroscopy (FTIR), and a Ag thin film was deposited on the nanoimprinted polymer structures to limit their inhibitive influence on the growth of ZnO nanowires. Furthermore, the naturally oxidized Ag layer (Ag2O) reduced crystalline lattice mismatches at the interface between ZnO-Ag during the seed annealing process. The ZnO nanowires grown on the Ag-deposited PUA microstructures were found to have comparable morphological characteristics with ZnO nanowires grown on a Si wafer.

Permanent bending and alignment of ZnO nanowires.

PubMed

Borschel, Christian; Spindler, Susann; Lerose, Damiana; Bochmann, Arne; Christiansen, Silke H; Nietzsche, Sandor; Oertel, Michael; Ronning, Carsten

2011-05-06

Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

Superhydrophobicity of Hierarchical and ZNO Nanowire Coatings

DTIC Science & Technology

2014-01-01

AFRL-RX-WP-TP-2014-0141 SUPERHYDROPHOBICITY OF HIERARCHICAL ZNO NANOWIRE COATINGS (POSTPRINT) Shin Mou AFRL/RXAN JANUARY... SUPERHYDROPHOBICITY OF HIERARCHICAL ZNO NANOWIRE COATINGS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...or disclose the work. The final publication is available at www.rsc.org/MaterialsA. 14. ABSTRACT Hierarchical superhydrophobic surfaces were

Quantum-interference transport through surface layers of indium-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Chiu, Shao-Pin; Lu, Jia Grace; Lin, Juhn-Jong

2013-06-01

We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of ≈70 and ≈90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a ‘core-shell-like structure’ in individual IZO NWs, where an outer shell of thickness t (≃15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length Lφ gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where Lφ approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where Lφ approximately equals t (doped ZnO NWs. This work also strongly

Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates

PubMed Central

2014-01-01

In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s-1 for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices. PMID:25593556

Diffusion, swelling, cross linkage study and mechanical properties of ZnO doped PVA/NaAlg blend polymer nanocomposite

NASA Astrophysics Data System (ADS)

Guruswamy, B.; Ravindrachary, V.; Shruthi, C.; Hegde, Shreedatta; Sagar, Rohan N.

2018-04-01

ZnO nano particles were synthesized using a chemical precipitation method. Pure and ZnO nano particle doped PVA-NaAlg blend composite films were prepared using solution casing method. Structural information of these composites was studied using FTIR. Diffusion kinetics of these polymer blend composite were studied using Flory-Huggins theory. Using these diffusion studies, cross-linking density and swelling properties of the films were analyzed. Mechanical properties of these composite are also studied.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules.

PubMed

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-08

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (R air/R gas = 12.8) compared to that (R air/R gas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

PubMed Central

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors. PMID:26743814

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

NASA Astrophysics Data System (ADS)

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Hierarchical Carbon Fibers with ZnO Nanowires for Volatile Sensing in Composite Curing (Postprint)

DTIC Science & Technology

2014-07-01

needed to demonstrate the use of Zinc Oxide (ZnO) nanowire coated carbon fibers as a volatile sensor. ZnO nanowires are demonstrated to function as...processing. For this work, we report on the foundational study needed to demonstrate the use of Zinc Oxide (ZnO) nanowire coated carbon fibers as a...array of ZnO nanowires. Zinc oxide nanowires become more conductive in the presence of ethanol – as analyte sorbs to the surface, electron density

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Viana, Bruno; Lupan, Oleg; Pauporté, Thierry

2011-01-01

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

PubMed Central

2012-01-01

Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs. PMID:22647319

Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient

PubMed Central

2012-01-01

ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices. PMID:22502639

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

PubMed

Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

2015-07-27

In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

Control of the ZnO nanowires nucleation site using microfluidic channels.

PubMed

Lee, Sang Hyun; Lee, Hyun Jung; Oh, Dongcheol; Lee, Seog Woo; Goto, Hiroki; Buckmaster, Ryan; Yasukawa, Tomoyuki; Matsue, Tomokazu; Hong, Soon-Ku; Ko, HyunChul; Cho, Meoung-Whan; Yao, Takafumi

2006-03-09

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.

Enhancement of Si solar cell efficiency using ZnO nanowires with various diameters

NASA Astrophysics Data System (ADS)

Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.; Mehrabi, M.

2018-01-01

Here, Zinc Oxide nanowires are synthesized using thermal chemical vapor deposition of a Zn granulate source and used to enhance a significant Si-solar cell efficiency with simple and low cost method. The nanowires are grown in various O2 flow rates. Those affect the shape, yield, structure and the quality of ZnO nanowires according to scanning electron microscopy and x-ray diffraction analyses. This delineates that the ZnO nanostructure is dependent on the synthesis conditions. The photoluminescence spectroscopy of ZnO indicates optical emission at the Ultra-Violet and blue-green regions whose intensity varies as a function of diameter of ZnO nano-wires. The optical property of ZnO layer is measured by UV-visible and diffuse reflection spectroscopy that demonstrate high absorbance at 280-550 nm. Furthermore, the photovoltaic characterization of ZnO nanowires is investigated based on the drop casting on Si-solar cell. The ZnO nanowires with various diameters demonstrate different effects on the efficiency of Si-solar cells. We have shown that the reduction of the spectral reflectance and down-shifting process as well as the reduction of photon trapping are essential parameters on the efficiency of Si-solar cells. However, the latter is dominated here. In fact, the trapped photons during the electron-hole generation are dominant due to lessening the absorption rate in ZnO nano-wires. The results indicate that the mean diameters reduction of ZnO nanowires is also essential to improve the fill factor. The external and internal quantum efficiency analyses attest the efficiency improvement over the blue region which is related to the key parameters above.

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

NASA Astrophysics Data System (ADS)

Zhong, Kun; Xu, Jie; Su, Jing; Chen, Yu lin

2011-02-01

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er3+ and N+ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er3+ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO6-xNx octahedron complexes. With the increase of the annealing temperature (Ta), the Er3+ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.

Morphology and Doping Engineering of Sn-Doped Hematite Nanowire Photoanodes.

PubMed

Li, Mingyang; Yang, Yi; Ling, Yichuan; Qiu, Weitao; Wang, Fuxin; Liu, Tianyu; Song, Yu; Liu, Xiaoxia; Fang, Pingping; Tong, Yexiang; Li, Yat

2017-04-12

High-temperature activation has been commonly used to boost the photoelectrochemical (PEC) performance of hematite nanowires for water oxidation, by inducing Sn diffusion from fluorine-doped tin oxide (FTO) substrate into hematite. Yet, hematite nanowires thermally annealed at high temperature suffer from two major drawbacks that negatively affect their performance. First, the structural deformation reduces light absorption capability of nanowire. Second, this "passive" doping method leads to nonuniform distribution of Sn dopant in nanowire and limits the Sn doping concentration. Both factors impair the electrochemical properties of hematite nanowire. Here we demonstrate a silica encapsulation method that is able to simultaneously retain the hematite nanowire morphology even after high-temperature calcination at 800 °C and improve the concentration and uniformity of dopant distribution along the nanowire growth axis. The capability of retaining nanowire morphology allows tuning the nanowire length for optimal light absorption. Uniform distribution of Sn doping enhances the donor density and charge transport of hematite nanowire. The morphology and doping engineered hematite nanowire photoanode decorated with a cobalt oxide-based oxygen evolution reaction (OER) catalyst achieves an outstanding photocurrent density of 2.2 mA cm -2 at 0.23 V vs Ag/AgCl. This work provides important insights on how the morphology and doping uniformity of hematite photoanodes affect their PEC performance.

CdTe quantum-dot-modified ZnO nanowire heterostructure

NASA Astrophysics Data System (ADS)

Shahi, Kanchana; Singh, R. S.; Singh, Ajaya Kumar; Aleksandrova, Mariya; Khenata, Rabah

2018-03-01

The effect of CdTe quantum-dot (QD) decoration on the photoluminescence (PL) behaviour of ZnO nanowire (NW) array is presented in the present work. Highly crystalline and vertically 40-50 nm diameter range and 1 µm in length aligned ZnO NWs are synthesized using low-cost method. The crystallinity and morphology of the NWs are studied by scanning electron microscopy and X-ray powder diffraction methods.Optical properties of the nanowires are studied using photo-response and PL spectroscopy. CdTe QDs are successfully synthesized on ZnO nanowire surface by dip-coating method. ZnO NWs are sensitized with CdTe QDs characterized by transmission electron microscopy, energy-dispersive X-ray spectroscopy, and PL spectroscopy. The highly quenched PL intensity indicates the charge transfer at interface between CdTe QDs and ZnO NWs and is due to the formation of type-II heterostructure between QDs and NWs. Photo-response behaviour of heterostructure of the film is also been incorporated in the present work.

Effect of cobalt doping on structural and optical properties of ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, J.; Chanda, A., E-mail: anupamamatsc@gmail.com; Gupta, S.

Cobalt doped ZnO nanoparticles of uniform sizes were prepared by a chemical method using ZnCl{sub 2} and NaOH as the source materials. The formation of Co-doped ZnO nanoparticles was confirmed by transmission electron microscopy (TEM), high resolution TEM (HR-TEM) and selected area electron diffraction (SAED) studies. The optical properties of obtained products were examined using room temperature UV-visible and FTIR spectroscopy. SAED of cobalt doped ZnO nanoparticles shows homogeneous distribution of nanoparticles with hexagonal structure. The HRTEM image of the Co-doped ZnO nanoparticles reveals a clear lattice spacing of 0.52 nm corresponding to the interplanar spacing of wurtzite ZnO (002) plane.more » The absorption band at 857 cm{sup −1} in FTIR spectra confirmed the tetrahedral coordination of Zn and a shift of absorption peak to shorter wavelength region and decrease in absorbance with Co doping.is observed in UV-Visible spectra.« less

Optical and Magnetic Resonance Studies of Na-Diffused ZnO Bulk Single Crystals

NASA Astrophysics Data System (ADS)

Glaser, E. R.; Garces, N. Y.; Parmar, N. S.; Lynn, K. G.

2013-03-01

Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) at 24 GHz were performed on bulk ZnO crystals after diffusion of Na impurities that were explored as an alternate doping source for p-type conductivity. PL at 2K revealed strong bandedge excitonic recombination at 3.361 eV and a broad ``orange'' PL band at 2.17 eV with FWHM of ~0.5 eV. This ``orange'' emission is very similar to that reported previously[1] from thermoluminescence measurements of intentionally Na-doped bulk ZnO and, thus, strongly suggests the incorporation and activation of the Na-diffused impurities. ODMR performed on this ``orange'' PL revealed two signals. The first was a sharp feature with g-value of ~1.96 and is a well-known ``fingerprint'' of shallow donors in ZnO. The second signal consisted of a pair of lines with an intensity ratio of ~3:1 and with g-tensors (g∥,g⊥ ~2.008-2.029) very similar to ESR signals attributed previously[2] to holes bound to Na impurities located at the axial and non-axial Zn host lattice sites in Na-doped ZnO. Thus, the ``orange'' PL can be tentatively assigned to radiative recombination between residual shallow donors and deep Na-related hole traps.

Performance improvement of miniaturized ZnO nanowire accelerometer fabricated by refresh hydrothermal synthesis

PubMed Central

Song, Sangho; Kim, Hyun Chan; Kim, Jung Woong; Kim, Debora

2017-01-01

Miniaturized accelerometers are necessary for evaluating the performance of small devices, such as haptics, robotics and simulators. In this study, we fabricated miniaturized accelerometers using well-aligned ZnO nanowires. The layer of ZnO nanowires is used for active piezoelectric layer of the accelerometer, and copper was chosen as a head mass. Seedless and refresh hydrothermal synthesis methods were conducted to grow ZnO nanowires on the copper substrate and the effect of ZnO nanowire length on the accelerometer performance was investigated. The refresh hydrothermal synthesis exhibits longer ZnO nanowires, 12 µm, than the seedless hydrothermal synthesis, 6 µm. Performance of the fabricated accelerometers was verified by comparing with a commercial accelerometer. The sensitivity of the fabricated accelerometer by the refresh hydrothermal synthesis is shown to be 37.7 pA g−1, which is about 30 times larger than the previous result. PMID:28989760

Tailoring the Hydrothermal Synthesis of Stainless Steel Wire Sieve-Supported Ag-Doped ZnO Nanowires to Optimize Their Photo-catalytic Activity

NASA Astrophysics Data System (ADS)

Jing, W. X.; Shi, J. F.; Xu, Z. P.; Jiang, Z. D.; Wei, Z. Y.; Zhou, F.; Wu, Q.; Cui, Q. B.

2018-03-01

Batches of un-doped and Ag-doped ZnO nanowires (ZnONWs) were prepared hydrothermally on stainless steel wire sieves at varied Zn2+ concentrations of the growth solution and at different Ag+ concentrations of the silver nitrate solution. Methylene blue solution was degraded with these as-prepared ZnONWs in the presences of ultraviolet irradiation. It is found that both the processing parameters greatly affect the surface textures, wettability, and photo-activity of the ZnONWs. The latter synthesizing parameter is optimized only after the former one has been finely regulated. The un-doped and Ag-doped ZnONWs at Zn2+ concentration of 75 mM of the growth solution and at Ag+ concentration of3 mM of the silver nitrate solution both produce Gaussian rough surfaces and in each batch are most hydrophilic. Therefore, in the related batch the contacting surface area of the catalyst is the largest, the hydroxyl radicals attached on the top ends of corresponding ZnONWs the most, and the catalytic activity of these catalysts the optimal. Besides these, the latter synthesizing parameter affects the photo-activity of Ag-doped ZnONWs more significantly than the former one does that of un-doped ZnONWs.

Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires

PubMed Central

2011-01-01

1, 3, and 5 wt.% silver-doped ZnO (SZO) nanowires (NWs) are grown by hot-walled pulsed laser deposition. After silver-doping process, SZO NWs show some change behaviors, including structural, electrical, and optical properties. In case of structural property, the primary growth plane of SZO NWs is switched from (002) to (103) plane, and the electrical properties of SZO NWs are variously measured to be about 4.26 × 106, 1.34 × 106, and 3.04 × 105 Ω for 1, 3, and 5 SZO NWs, respectively. In other words, the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally, the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor (A0X). Also, Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility of changing the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice. PMID:21985620

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

PubMed

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

PubMed Central

Motta, Nunzio; Lee, Soonil

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse. PMID:23016139

Effects of mechanical strain on optical properties of ZnO nanowire

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Lambada, Dasaradha Rao; Yang, Shuming; Zhang, Guofeng; Cheng, Biyao; Woldu, Yonas Tesfaye; Shafique, Shareen; Wang, Yiming; Anastase, Ndahimana

2018-02-01

The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW) before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM) software package ABAQUS and three-dimensional (3D) finite-difference time-domain (FDTD) methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

Hydrothermal growth of ZnO nanowire arrays: fine tuning by precursor supersaturation

DOE PAGES

Yan, Danhua; Cen, Jiajie; Zhang, Wenrui; ...

2016-12-20

In this paper, we develop a technique that fine tunes the hydrothermal growth of ZnO nanowires to address the difficulties in controlling their growth in a conventional one-pot hydrothermal method. In our technique, precursors are separately and slowly supplied with the assistance of a syringe pump, through the entire course of the growth. Compared to the one-pot method, the significantly lowered supersaturation of precursors helps eliminating competitive homogeneous nucleation and improves the reproducibility. The supersaturation degree can be readily tuned by the precursor quantity and injection rate, thus forming ZnO nanowire arrays of various geometries and packing densities in amore » highly controllable fashion. The precise control of ZnO nanowire growth enables systematic studies on the correlation between the material's properties and its morphology. Finally, in this work, ZnO nanowire arrays of various morphologies are studied as photoelectrochemical (PEC) water splitting photoanodes, in which we establish clear correlations between the water splitting performance and the nanowires' size, shape, and packing density.« less

Intrinsic and extrinsic doping of ZnO and ZnO alloys

NASA Astrophysics Data System (ADS)

Ellmer, Klaus; Bikowski, André

2016-10-01

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for

Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

PubMed Central

2014-01-01

Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol–gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol–gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices. PMID:24521308

A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate

NASA Astrophysics Data System (ADS)

Lin, Chih-Hung; Chang, Shoou-Jinn; Hsueh, Ting-Jen

2016-09-01

In this work, a low-temperature ZnO nanowire ethanol gas sensor was prepared on plastic substrate. The operating temperature of the ZnO nanowire ethanol gas sensor was reduced to room temperature using ultraviolet illumination. The experimental results indicate a favorable sensor response at low temperature, with the best response at 60 °C. The results also reveal that the ZnO nanowire ethanol gas sensor can be easily integrated into portable products, whose waste heat can improve sensor response and achieve energy savings, while energy consumption can be further reduced by solar irradiation.

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis.

PubMed

Shih, Po-Hsun; Wu, Sheng Yun

2017-07-21

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.

Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis

PubMed Central

Shih, Po-Hsun

2017-01-01

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion. PMID:28754030

A simple and transparent well-aligned ZnO nanowire array ultraviolet photodetector with high responsivity

NASA Astrophysics Data System (ADS)

Yin, Lei; Ding, Hesheng; Yuan, Zhaolin; Huang, Wendeng; Shuai, Chunjiang; Xiong, Zhaoxin; Deng, Jianping; Lv, Tengbo

2018-06-01

Well-aligned zinc oxide (ZnO) nanowire arrays were grown on an interdigital patterned fluorine tin oxide (FTO)-coated glass substrate by a facile chemical bath deposition at low temperature. Morphology, crystalline structure, and optical properties of the ZnO nanowire arrays were analyzed in detail. The results revealed that the ZnO nanowires had wurtzite structure, typically ∼40-60 nm in diameter, and ∼700-800 nm in length, a great number of highly uniform and dense nanowires grew vertically on the substrate to form the well-aligned ZnO nanowire arrays, which had very high optical transmission (>86%) in the visible light region. In addition, the performance of ZnO nanowire arrays ultraviolet (UV) photodetector was systematically examined. The photosensitivity (S), responsivity (R), response and decay time of the photodetector were 703 at +0.2 V, 113 A/W at +5 V, 23 s and 73 s respectively. Also, the photoresponse mechanism of the UV photodetector was illuminated in terms of the oxygen adsorption-photodesorption process.

ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

PubMed

Yang, Wenming; Zhu, Rong; Zong, Xianli

2016-12-01

Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

Hydrothermal growth of ZnO nanowires on flexible fabric substrates

NASA Astrophysics Data System (ADS)

Hong, Gwang-Wook; Yun, Sang-Ho; Kim, Joo-Hyung

2016-04-01

ZnO nanowires (NWs) would provide significant enhancement in sensitivity due to high surface to volume ratio. We investigated the first methodical study on the quantitative relationship between the process parameters of solution concentration ratio, structure, and physical and properties of ZnO NWs grown on different flexible fabric surfaces. To develop a fundamental following concerning various substrates, we controlled the growth speed of ZnO NWs and nanowires on cotton surface with easy and moderate cost fabrication method. Using ammonium hydroxide as the reactant with zinc nitrate hexahydrate, ZnO NWs layer have been grown on metal layers, instead of seed layer. ZnO NWs fabrication was done on different fabric substrates such as wool, nylon and polypropylene (PP). After the ZnO NWs grown to each substrates, we coated insulating layer with polyurethane (PU) and ethyl cellulose for prevent external intervention. Detailed electrical characterization was subsequently performed to reveal the working characteristics of the hybrid fabric. For electrical verification of fabricated ZnO NWs, we implemented measurement impact test and material properties with FFT analyzer and LCR meter.

Fabrication and Performance Study on Individual Zno Nanowires Based Bioelectrode

NASA Astrophysics Data System (ADS)

Zhao, Yanguang; Yan, Xiaoqin; Kang, Zhuo; Lin, Pei

2012-08-01

One-dimensional zinc oxide nanowires (ZnO NWs) have unique advantages for use in biosensors as follows: oxide stable surface, excellent biosafety, high specific surface area, high isoelectric point (IEP = 9.5). In this work, we have prepared a kind of electrochemical bioelectrode based on individual ZnO NWs. Here, ZnO NWs with high quality were successfully synthesized by CVD method, which were characterized by scanning electron microscopy, X-ray diffraction and photoluminescence. Then the Raman spectra and electrical characterization demonstrated the adsorption of uricase on ZnO wires. At last, a series of electrochemical measurements were carried out by using an electrochemical workstation with a conventional three-electrode system to obtain the cyclic voltammetry characteristics of the bioelectrodes. The excellent performance of the fabricated bioelectrode implies the potential application for single ZnO nanowire to construct electrochemical biosensor for the detection of uric acid.

Engineered ZnO nanowire arrays using different nanopatterning techniques

NASA Astrophysics Data System (ADS)

Volk, János; Szabó, Zoltán; Erdélyi, Róbert; Khánh, Nguyen Q.

2012-02-01

The impact of various masking patterns and template layers on the wet chemically grown vertical ZnO nanowire arrays was investigated. The nanowires/nanorods were seeded at nucleation windows which were patterned in a mask layer using various techniques such as electron beam lithography, nanosphere photolithography, and atomic force microscope type nanolithography. The compared ZnO templates included single crystals, epitaxial layer, and textured polycrystalline films. Scanning electron microscopy revealed that the alignment and crystal orientation of the nanowires were dictated by the underlying seed layer, while their geometry can be tuned by the parameters of the certain nanopatterning technique and of the wet chemical process. The comparison of the alternative nanolithography techniques showed that using direct writing methods the diameter of the ordered ZnO nanowires can be as low as 30-40 nm at a density of 100- 1000 NW/μm2 in a very limited area (10 μm2-1 mm2). Nanosphere photolithography assisted growth, on the other hand, favors thicker nanopillars (~400 nm) and enables large-area, low-cost patterning (1-100 cm2). These alternative lowtemperature fabrication routes can be used for different novel optoelectronic devices, such as nanorod based ultraviolet photodiode, light emitting device, and waveguide laser.

Cross-section imaging and p-type doping assessment of ZnO/ZnO:Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lin, E-mail: lin.wang@insa-lyon.fr; Brémond, Georges; Sallet, Vincent

2016-08-29

ZnO/ZnO:Sb core-shell structured nanowires (NWs) were grown by the metal organic chemical vapor deposition method where the shell was doped with antimony (Sb) in an attempt to achieve ZnO p-type conduction. To directly investigate the Sb doping effect in ZnO, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were performed on the NWs' cross-sections mapping their two dimensional (2D) local electrical properties. Although no direct p-type inversion in ZnO was revealed, a lower net electron concentration was pointed out for the Sb-doped ZnO shell layer with respect to the non-intentionally doped ZnO core, indicating an evident compensating effectmore » as a result of the Sb incorporation, which can be ascribed to the formation of Sb-related acceptors. The results demonstrate SCM/SSRM investigation being a direct and effective approach for characterizing radial semiconductor one-dimensional (1D) structures and, particularly, for the doping study on the ZnO nanomaterial towards its p-type realization.« less

Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

DTIC Science & Technology

2012-01-01

12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

Selectivity shifting behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires sensors

NASA Astrophysics Data System (ADS)

Arafat, M. M.; Ong, J. Y.; Haseeb, A. S. M. A.

2018-03-01

In this research, the gas sensing behavior of Pd nanoparticles loaded zinc stannate/zinc oxide (Zn2SnO4/ZnO) nanowires were investigated. The Zn2SnO4/ZnO nanowires were grown on Au interdigitated alumina substrate by carbon assisted thermal evaporation process. Pd nanoparticles were loaded on the Zn2SnO4/ZnO nanowires by wet reduction process. The nanowires were characterized by X-ray diffractometer, field emission scanning electron microscope and energy dispersive X-ray spectroscope. The Zn2SnO4/ZnO and Pd nanoparticles loaded Zn2SnO4/ZnO nanowires were investigated for detecting H2, H2S and C2H5OH gases in N2 background. Results revealed that the average diameter and length of as-grown Zn2SnO4/ZnO nanowires were 74 nm and 30 μm, respectively. During wet reduction process,Pd particles having size of 20-60 nm were evenly distributed on the Zn2SnO4/ZnO nanowires. The Zn2SnO4/ZnO nanowires based sensors showed selective response towards C2H5OH whereas Pd nanoparticles loaded Zn2SnO4/ZnO nanowires showed selective response towards H2. The recovery time of the sensors reduced with Pd loading on Zn2SnO4/ZnO nanowires. A mechanism is proposed to elucidate the gas sensing mechanism of Pd nanoparticles loaded Zn2SnO4/ZnO nanowires.

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

NASA Astrophysics Data System (ADS)

Madel, M.; Huber, F.; Mueller, R.; Amann, B.; Dickel, M.; Xie, Y.; Thonke, K.

2017-03-01

ZnO nanowires typically show persistent photoconductivity (PPC), which depends in their temporal behaviour on the ambient. We investigate ZnO nanowires in oxygen and argon ambient and analyze the PPC both on the short and on the long time scale to sort out the underlying mechanisms. Wavelength dependent excitation shows the energy barrier for the PPC to be around 150 meV below the band gap of ZnO, independent of the ambient atmosphere. In photocurrent measurements at constant wavelength, a log-logistic dependence of the conductivity on the partial oxygen pressure is observed. The experimental results are compared to a model of Bonasewicz et al. [J. Electrochem. Soc. 133, 2270 (1986)] and can be explained by oxygen adsorption processes occurring on the surface of the ZnO nanowires. From temperature dependent measurements of the decay times in oxygen and argon ambient, the related activation energies for the fast and slow decay processes are determined. Comparing our results to theoretical calculations of energy levels of intrinsic defects [Janotti and Van de Walle, Phys. Status Solidi B 248, 799 (2011)], we find oxygen vacancies to be related to the fast decay processes, whereas adsorption and desorption processes of oxygen on the ZnO nanowire surface account for the slow part.

Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.

PubMed

Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu

2013-02-01

Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.

Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.

PubMed

Li, Huifeng; Huang, Yunhua; Zhang, Qi; Qiao, Yi; Gu, Yousong; Liu, Jing; Zhang, Yue

2011-02-01

In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of ∼0.8 at% and ∼1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm2 V(-1) s(-1) and 2×10(18) cm(-3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.

Enhanced photoelectric performance in self-powered UV detectors based on ZnO nanowires with plasmonic Au nanoparticles scattered electrolyte

NASA Astrophysics Data System (ADS)

Zeng, Yiyu; Ye, Zhizhen; Lu, Bin; Dai, Wei; Pan, Xinhua

2016-04-01

Vertically aligned ZnO nanowires (NWs) were grown on a fluorine-doped tin-oxide-coated glass substrate by a hydrothermal method. Au nanoparticles were well dispersed in the mixed solution of ethanol and deionized water. A simple self-powered ultraviolet detector based on solid-liquid heterojunction was fabricated, utilizing ZnO NWs as active photoanode and such prepared mixed solution as electrolyte. The introduction of Au nanoparticles results in considerable improvements in the responsivity and sensitivity of the device compared with the one using deionized water as electrolyte, which is attributed to the enhanced light harvesting by Au nanoparticles.

Investigations on photoelectrochemical performance of boron doped ZnO nanorods synthesized by facile hydrothermal technique

NASA Astrophysics Data System (ADS)

Sharma, Akash; Chakraborty, Mohua; Thangavel, R.

2018-05-01

Undoped and 10% Boron (B)-doped Zinc Oxide nanorods (ZnO NRs) on Tin doped Indium Oxide (ITO) coated glass substrates were synthesized using facile sol-gel, spin coating and hydrothermal method. The impact of adding Boron on the structural, optical properties, surface morphology and photoelectrochemical (PEC) performances of the ZnO NRs have been investigated. The XRD pattern confirmed the formation of pure hexagonal phase with space group P63mc (186). The same can also be clearly observed form the FESEM images. The UV-Vis study shows the narrowing in band gap from 3.22 eV to 3.19 eV with incorporation of Boron in ZnO matrix. The B-doped ZnO NRs sample shows an enhanced photocurrent density of 1.31 mA/cm2 at 0.5 V (vs. Ag/AgCl), which is more than 171% enhancement compared to bare ZnO NRs (0.483 mA/cm2) in 0.1 M Na2SO4 aqueous solution. The results clearly indicates that the boron doped ZnO NRs can be used as an efficient photoelectrode material for photoelectrochemical cell.

Opto-mechano-electrical tripling in ZnO nanowires probed by photocurrent spectroscopy in a high-resolution transmission electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, C.; Golberg, D., E-mail: xuzhi@iphy.ac.cn, E-mail: golberg.dmitri@nims.go.jp; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3058577

2015-08-31

Photocurrent spectroscopy of individual free-standing ZnO nanowires inside a high-resolution transmission electron microscope (TEM) is reported. By using specially designed optical in situ TEM system capable of scanning tunneling microscopy probing paired with light illumination, opto-mechano-electrical tripling phenomenon in ZnO nanowires is demonstrated. Splitting of photocurrent spectra at around 3.3 eV under in situ TEM bending of ZnO nanowires directly corresponds to nanowire deformation and appearance of expanded and compressed nanowire sides. Theoretical simulation of a bent ZnO nanowire has an excellent agreement with the experimental data. The splitting effect could be explained by a change in the valence band structuremore » of ZnO nanowires due to a lattice strain. The strain-induced splitting provides important clues for future flexible piezo-phototronics.« less

Effect of gamma radiation on the optical and structural properties of ZnO nanowires with various diameters

NASA Astrophysics Data System (ADS)

Reyhani, A.; Gholizadeh, A.; vahedi, V.; Khanlary, M. R.

2018-01-01

The effects of gamma-irradiation are studied on the morphology and structural properties of ZnO nanowire with various diameters. The ZnO nanowires are grown using Zn thin films at various initial thicknesses including 125, 250 and 500 nm in air ambient. The results illustrate dramatic effects of Gamma-irradiation on the deformation of ZnO nanowires. Thus, radiation induce ripple ZnO surfaces instead ZnO nanowires. Gamma-irradiation has also been effective on the optical and crystalline properties of the nanowires. X-ray diffraction attests that size of the ZnO nano-structures has changed and (l00) crystalline direction related to Zn metal has been created after irradiation. UV-Visible spectra display two areas for transmittance of irradiated ZnO nanowires, one in the Visible-light and the other in IR sub-region. In the Visible-light area, the layer gets thicker from 125 to 500 nm; the difference between the layer transmittance spectra is reduced before and after gamma irradiation. In the IR-light region, with increasing of ZnO initial thickness, the difference between the layer transmittance spectra is increased before and after gamma irradiation. The photoluminescence spectroscopy displays that intensity of green-yellow band improves in compared to near-band-edge emission due to formation of Zn metal and oxygen vacancies after gamma irradiation.

Dopant radial inhomogeneity in Mg-doped GaN nanowires.

PubMed

Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno

2018-06-22

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

Dopant radial inhomogeneity in Mg-doped GaN nanowires

NASA Astrophysics Data System (ADS)

Siladie, Alexandra-Madalina; Amichi, Lynda; Mollard, Nicolas; Mouton, Isabelle; Bonef, Bastien; Bougerol, Catherine; Grenier, Adeline; Robin, Eric; Jouneau, Pierre-Henri; Garro, Nuria; Cros, Ana; Daudin, Bruno

2018-06-01

Using atom probe tomography, it is demonstrated that Mg doping of GaN nanowires grown by Molecular Beam Epitaxy results in a marked radial inhomogeneity, namely a higher Mg content in the periphery of the nanowires. This spatial inhomogeneity is attributed to a preferential incorporation of Mg through the m-plane sidewalls of nanowires and is related to the formation of a Mg-rich surface which is stabilized by hydrogen. This is further supported by Raman spectroscopy experiments which give evidence of Mg-H complexes in the doped nanowires. A Mg doping mechanism such as this, specific to nanowires, may lead to higher levels of Mg doping than in layers, boosting the potential interest of nanowires for light emitting diode applications.

Power generation from base excitation of a Kevlar composite beam with ZnO nanowires

NASA Astrophysics Data System (ADS)

Malakooti, Mohammad H.; Hwang, Hyun-Sik; Sodano, Henry A.

2015-04-01

One-dimensional nanostructures such as nanowires, nanorods, and nanotubes with piezoelectric properties have gained interest in the fabrication of small scale power harvesting systems. However, the practical applications of the nanoscale materials in structures with true mechanical strengths have not yet been demonstrated. In this paper, piezoelectric ZnO nanowires are integrated into the fiber reinforced polymer composites serving as an active phase to convert the induced strain energy from ambient vibration into electrical energy. Arrays of ZnO nanowires are grown vertically aligned on aramid fibers through a low-cost hydrothermal process. The modified fabrics with ZnO nanowires whiskers are then placed between two carbon fabrics as the top and the bottom electrodes. Finally, vacuum resin transfer molding technique is utilized to fabricate these multiscale composites. The fabricated composites are subjected to a base excitation using a shaker to generate charge due to the direct piezoelectric effect of ZnO nanowires. Measuring the generated potential difference between the two electrodes showed the energy harvesting application of these multiscale composites in addition to their superior mechanical properties. These results propose a new generation of power harvesting systems with enhanced mechanical properties.

Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.

The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, L.; Lu, H. B.; Li, J. C.

2007-10-22

In this letter, we present a gas sensor using a single ZnO nanowire as a sensing unit. This ZnO nanowire-based sensor has quick and high sensitive response to H{sub 2}S in air at room temperature. It has also been found that the gas sensitivity of the ZnO nanowires could be modulated and enhanced by He{sup +} implantation at an appropriate dose. A possible explanation is given based on the modulation model of the depletion layer.

Positron annihilation spectroscopy in doped p-type ZnO

NASA Astrophysics Data System (ADS)

Majumdar, Sayanee; Sanyal, D.

2011-07-01

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

Rapidly synthesized ZnO nanowires by ultraviolet decomposition process in ambient air for flexible photodetector.

PubMed

Wu, Jyh Ming; Chen, Yi-Ru; Lin, Yu-Hung

2011-03-01

We are the first group to use a simple direct ultraviolet light (UV, λ=365 nm, I=76 mW cm(-2)) in a decomposition process to fabricate ZnO nanowires on a flexible substrate using a zinc acetylacetonate hydrate precursor in ambient air. ZnO nanocrystal (or nanowire) production only requires three to ten minutes. A field emission scanning electron microscopy (FESEM) image reveals a high aspect ratio of the ZnO nanowires, which are grown on a substrate with a diameter of ∼50-100 nm, and a length of up to several hundred microns. High resolution transmission electron microscopy (HRTEM) images reveal that the nanowires consist of many single crystalline ZnO nanoparticles that grow along the c axis, which suggests an oriented attachment process. A potential application for flexible UV photodetectors was investigated using a UV lamp (λ=365 nm, I=2.34 mW cm(-2)). A significant ratio of photocurrent to dark current--around 11,300%--was achieved.

Effect of aging on ZnO and nitrogen doped P-Type ZnO

NASA Astrophysics Data System (ADS)

Majumdar, Sayanee; Bhunia, S.

2012-06-01

The withholding of p-type conductivity in as-prepared and 3% nitrogen (N) doped zinc oxide (ZnO) even after 2 months of preparation was systematically studied. The films were grown on glass substrates by pulsed laser deposition (PLD) at 350 °C under different conditions, viz. under vacuum and at oxygen (O) ambience using 2000 laser pulses. In O ambience for as-prepared ZnO the carrier concentration reduces and mobility increases with increasing number of laser shots. The resistivity of as-prepared and 3% N-doped ZnO is found to increase with reduction in hole concentration after 60 days of aging while maintaining its p-type conductivity irrespective of growth condition. AFM and electrical properties showed aging effect on the doped and undoped samples. For as-prepared ZnO, with time, O migration makes the film high resistive by reducing free electron concentrations. But for N-doped p-type ZnO, O-migration, metastable N and hydrogen atom present in the source induced instability in structure makes it less conducting p-type.

Functionalized ZnO nanowires for microcantilever biosensors with enhanced binding capability.

PubMed

Stassi, Stefano; Chiadò, Alessandro; Cauda, Valentina; Palmara, Gianluca; Canavese, Giancarlo; Laurenti, Marco; Ricciardi, Carlo

2017-04-01

An efficient way to increase the binding capability of microcantilever biosensors is here demonstrated by growing zinc oxide nanowires (ZnO NWs) on their active surface. A comprehensive evaluation of the chemical compatibility of ZnO NWs brought to the definition of an innovative functionalization method able to guarantee the proper immobilization of biomolecules on the nanostructured surface. A noteworthy higher amount of grafted molecules was evidenced with colorimetric assays on ZnO NWs-coated devices, in comparison with functionalized and activated silicon flat samples. ZnO NWs grown on silicon microcantilever arrays and activated with the proposed immobilization strategy enhanced the sensor binding capability (and thus the dynamic range) of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices. Graphical Abstract An efficient way to increase the binding capability of microcantilever biosensors is represented by growing zinc oxide nanowires (ZnO NWs) on their active surface. ZnO NWs grown on silicon microcantilever arrays and activated with an innovative immobilization strategy enhanced the sensor binding capability of nearly 1 order of magnitude, with respect to the commonly employed flat functionalized silicon devices.

Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors

NASA Astrophysics Data System (ADS)

Du, Qianqian; Ye, Jiandong; Xu, Zhonghua; Zhu, Shunming; Tang, Kun; Gu, Shulin; Zheng, Youdou

2018-03-01

Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.

Enhanced photoluminescence properties of Al doped ZnO films

NASA Astrophysics Data System (ADS)

Chen, H. X.; Ding, J. J.

2018-01-01

Al doped ZnO films are fabricated by radio frequency magnetron sputtering. In general, visible emission is related to various defects in ZnO films. However, too much defects will cause light emission quench. So it is still a controversial issue to control appropriate defect concentrations. In this paper, based on our previous results, appropriate Al doping concentration is chosen to introduce more both interstitial Zn and O vacancy defects, which is responsible for main visible emission of ZnO films. A strong emission band located at 405 nm and a long tail peak is observed in the samples. As Al is doped in ZnO films, the intensity of emission peaks increases. Zn interstitial might increase with the increasing Al3+ substitute because ZnO was a self-assembled oxide compound. So Zn interstitial defect concentration in Al doped ZnO films will increase greatly, which results in the intensity of emission peaks increases.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Chemical manipulation of oxygen vacancy and antibacterial activity in ZnO.

PubMed

V, Lakshmi Prasanna; Vijayaraghavan, Rajagopalan

2017-08-01

Pure and doped ZnO (cation and anion doping) compositions have been designed in order to manipulate oxygen vacancy and antibacterial activity of ZnO. In this connection, we have synthesized and characterized micron sized ZnO, N doped micron sized ZnO, nano ZnO, nano Na and La doped ZnO. The intrinsic vacancies in pure ZnO and the vacancies created by N and Na doping in ZnO have been confirmed by X-ray Photoelectron Spectroscopy(XPS) and Photoluminiscence Spectroscopy(PL). Reactive oxygen species (ROS) such as hydroxyl radicals, superoxide radicals and H 2 O 2 responsible for antibacterial activity have been estimated by PL, UV-Vis spectroscopy and KMnO 4 titrations respectively. It was found that nano Na doped ZnO releases highest amount of ROS followed by nano ZnO, micron N doped ZnO while micron ZnO releases the least amount of ROS. The concentration of vacancies follows the same sequence. This illustrates directly the correlation between ROS and oxygen vacancy in well designed pure and doped ZnO. For the first time, material design in terms of cation doping and anion doping to tune oxygen vacancies has been carried out. Interaction energy (E g ), between the bacteria and nanoparticles has been calculated based on Extended Derjaguin-Landau-Verwey-Overbeek (EDLVO) theory and is correlated with antibacterial activity. Copyright © 2017 Elsevier B.V. All rights reserved.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

NASA Astrophysics Data System (ADS)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

PubMed

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Effect of Si-doping on InAs nanowire transport and morphology

NASA Astrophysics Data System (ADS)

Wirths, S.; Weis, K.; Winden, A.; Sladek, K.; Volk, C.; Alagha, S.; Weirich, T. E.; von der Ahe, M.; Hardtdegen, H.; Lüth, H.; Demarina, N.; Grützmacher, D.; Schäpers, Th.

2011-09-01

The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

Doping of germanium nanowires grown in presence of PH3

NASA Astrophysics Data System (ADS)

Tutuc, E.; Chu, J. O.; Ott, J. A.; Guha, S.

2006-12-01

The authors study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of phosphine (PH3), used as a dopant precursor. The device characteristics of the ensuing nanowire field effect transistors (FETs) indicate n-type, highly doped nanowires. Using a combination of different nanowire growth sequences and their FET characteristics, the authors determine that phosphorus incorporates predominately via the conformal growth, which accompanies the acicular, nanowire growth. As such, the Ge nanowires grown in the presence of PH3 contain a phosphorus doped shell and an undoped core. The authors determine the doping level in the shell to be ≃(1-4)×1019cm-3.

Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

PubMed Central

2013-01-01

Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

Hierarchically structured nanowires on and nanosticks in ZnO microtubes

PubMed Central

Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

2015-01-01

We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

DTIC Science & Technology

2008-11-01

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO- Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 ...nanobrushes (NBs) with Ga2O3 as the core and ZnO as the branches self-assembling symmetrically in six equiangular directions around the core

Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N., E-mail: ramakrishnan@monash.edu

Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use ofmore » a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.« less

Room temperature ferromagnetism in Cu doped ZnO

NASA Astrophysics Data System (ADS)

Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

2018-05-01

We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

Doping process of p-type GaN nanowires: A first principle study

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

2017-10-01

The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

Highly active lanthanum doped ZnO nanorods for photodegradation of metasystox.

PubMed

Korake, P V; Dhabbe, R S; Kadam, A N; Gaikwad, Y B; Garadkar, K M

2014-01-05

La-doped ZnO nanorods with different La contents were synthesized by microwave assisted method and characterized by various sophisticated techniques such as XRD, UV-Vis., EDS, XPS, SEM and TEM. The XRD patterns of the La-doped ZnO indicate hexagonal crystal structure with an average crystallite size of 30nm. It was found that the crystallite size of La-doped ZnO is much smaller as compared to pure ZnO and decreases with increasing La content. The photocatalytic activity of 0.5mol% La-doped ZnO in the degradation of metasystox was studied. It was observed that degradation efficiency of metasystox over La-doped ZnO increases up to 0.5mol% doping then decreases for higher doping levels. Among the catalyst studied, the 0.5mol% La-doped ZnO was the most active, showing high photocatalytic activity for the degradation of metasystox. The maximum reduction of concentration of metasystox was observed under static condition at pH 8. Reduction in the Chemical Oxygen Demand (COD) of metasystox was observed after 150min. The cytotoxicological studies of meristematic root tip cells of Allium cepa were studied. The results obtained indicate that photocatalytically degraded products of metasystox were less toxic as compared to metasystox. Copyright © 2013 Elsevier B.V. All rights reserved.

MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

PubMed

Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

2016-04-06

Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes.

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

PubMed Central

Ning, Feng; Tang, Li-Ming; Zhang, Yong; Chen, Ke-Qiu

2015-01-01

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping. PMID:26028535

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

NASA Astrophysics Data System (ADS)

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie; Stavitski, Eli; Sadowski, Jerzy T.; Vescovo, Elio; Walter, Andrew; Attenkofer, Klaus; Stacchiola, Darío J.; Liu, Mingzhao

2017-12-01

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices such as ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of the reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.

N doped ZnO and ZnO nanorods based p-n homojunction fabricated by ion implantation

NASA Astrophysics Data System (ADS)

Chakraborty, Mohua; Thangavel, R.; Asokan, K.

2018-05-01

Nitrogen (N) doped and undoped Zinc Oxide (ZnO) nanorod p-n homojunctions were fabricated by ion implantation method. The structural and optical characterizations showed that the N atoms doped into the ZnO crystal lattice. The UV-Vis absorption spectra revealed shift in optical absorption edge towards higher wavelength with ion implantation on ZnO, which attributed N acceptor levels above the valence band. The current-voltage (I-V) measurements exhibit a typical semiconductor rectification characteristic indicating the electrical conductivity of the N-doped ZnO nanorod have p-type conductivity. Moreover, a high photocurrent response has been observed with these p-n homojunctions.

Eu-doped ZnO nanoparticles: Sonochemical synthesis, characterization, and sonocatalytic application.

PubMed

Khataee, Alireza; Karimi, Atefeh; Zarei, Mahmoud; Joo, Sang Woo

2015-03-30

Undoped and europium (III)-doped ZnO nanoparticles were prepared by a sonochemical method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) analysis. The crystalline sizes of undoped and 3% Eu-doped ZnO were found to be 16.04 and 8.22nm, respectively. The particle size of Eu-doped ZnO nanoparticles was much smaller than that of pure ZnO. The synthesized nanocatalysts were used for the sonocatalytic degradation of Acid Red 17. Among the Eu-doped ZnO catalysts, 3% Eu-doped ZnO nanoparticles showed the highest sonocatalytic activity. The effects of various parameters such as catalyst loading, initial dye concentration, pH, ultrasonic power, the effect of oxidizing agents, and the presence of anions were investigated. The produced intermediates of the sonocatalytic process were monitored by GC-Mass (GC-MS) spectrometry. Copyright © 2015 Elsevier B.V. All rights reserved.

Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

PubMed

Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

2015-10-01

In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. Copyright © 2015 Elsevier Inc. All rights reserved.

ZnO nanowires: Synthesis and charge transfer mechanism in the detection of ammonia vapour

NASA Astrophysics Data System (ADS)

Nancy Anna Anasthasiya, A.; Ramya, S.; Rai, P. K.; Jeyaprakash, B. G.

2018-01-01

ZnO nanowires with hexagonal wurtzite structure were grown on the glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method. Both experimental and theoretical studies demonstrated that NH3 chemisorbed and transferred the charge to the surface of the nanowire via its nitrogen site to the zinc site of ZnO nanowires, leading to the detection of NH3 vapour. The adsorbed ammonia dissociated into NH2 and H due to steric repulsion, and then into N2 and H2 gas. The formation of the N2 gas during the desorption process confirmed by observing peak at 14 and 28 m/z in the GC-MS spectrum.

Reconstruction of perfect ZnO nanowires facets with high optical quality

NASA Astrophysics Data System (ADS)

Zehani, E.; Hassani, S.; Lusson, A.; Vigneron, J.; Etcheberry, A.; Galtier, P.; Sallet, V.

2017-07-01

ZnO nanowires were grown on sapphire substrates using metalorganic chemical vapor deposition. The samples were subsequently annealed under zinc pressure in a vacuum-sealed ampoule, at temperature ranging from 500 to 800 °C. The originality and the main motivation to provide a zinc-rich atmosphere were to prevent the out-diffusion of zinc from the nanowires. In doing so, the perfect structural properties and the morphology of the nanowires are kept. Interestingly, photoluminescence experiments performed on nanowires annealed in a narrow window of temperature [580-620 °C] show a spectacular improvement of the optical quality, as transitions commonly observable in high quality bulk samples are found. In addition, the intensity of the so-called "surface excitons" (SX) is strongly decreased. To accurately investigate the chemical modifications of the surface, XPS experiments were carried out and show that zinc hydroxide species and/or Zn(OH)2 sublayer were partially removed from the surface. These results suggest that the annealing process in zinc vapor helps to properly reconstruct the surface of ZnO nanowires, and improves the optical quality of their core. Such a thermal treatment at moderate temperature should be beneficial to nanodevices involving surface reaction, e.g. gas sensors.

An optimal thermal evaporation synthesis of c-axis oriented ZnO nanowires with excellent UV sensing and emission characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Tridib, E-mail: tridib.saha@monash.edu; Achath Mohanan, Ajay, E-mail: ajay.mohanan@monash.edu; Swamy, Varghese, E-mail: varghese.swamy@monash.edu

Highlights: • c-Axis alignment of ZnO nanowires was optimized using self-seeding thermal evaporation method. • Influence of purified air on the morphology and optoelectronic properties were studied. • Nanowires grown under optimal conditions exhibit strong UV emission peak in PL spectrum. • Optimized growth condition establish nanowires of excellent UV sensing characteristics - Abstract: Well-aligned (c-axis oriented) ZnO nanowire arrays were successfully synthesized on Si (1 0 0) substrates through an optimized self-seeding thermal evaporation method. An open-ended chemical vapor deposition (CVD) setup was used in the experiment, with argon and purified air as reaction gases. Epitaxial growth of c-axismore » oriented ZnO nanowires was observed for 5 sccm flow rate of purified air, whereas Zn/Zn suboxide layers and multiple polycrystalline layers of ZnO were obtained for absence and excess of purified air, respectively. Ultraviolet (UV) sensing and emission properties of the as-grown ZnO nanostructures were investigated through the current–voltage (I–V) characteristics of the nanowires under UV (λ = 365 nm) illumination of 8 mW/cm{sup 2} and using photoluminescence spectra. Nanowires grown under optimum flow of air emitted four times higher intensity of 380 nm UV light as well as exhibited 34 times higher UV radiation sensitivity compared to that of other nanostructures synthesized in this study.« less

Piezoresistive boron doped diamond nanowire

DOEpatents

Sumant, Anirudha V.; Wang, Xinpeng

2017-07-04

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Piezoresistive boron doped diamond nanowire

DOEpatents

Sumant, Anirudha V.; Wang, Xinpeng

2016-09-13

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Anomalous antibacterial activity and dye degradation by selenium doped ZnO nanoparticles.

PubMed

Dutta, Raj Kumar; Nenavathu, Bhavani Prasad; Talukdar, Soumita

2014-02-01

Selenium doped ZnO nanoparticles synthesized by mechanochemical method were spherically shaped of size distribution of 10.2±3.4 nm measured by transmission electron microscopy. Diffused reflectance spectroscopy revealed increase in the band gap, ranging between 3.47 eV and 3.63 eV due to Se doping in ZnO nanoparticles. The antibacterial activity of pristine and Se doped ZnO nanoparticles was attributed to ROS (reactive oxygen species) generation in culture media confirmed by TBARS assay. Compared to complete inhibition of growth by 0.45 mg/mL of pristine ZnO nanoparticles, the batches of 0.45 mg/mL of selenium doped ZnO nanoparticles exhibited only 51% inhibition of growth of Escherichia coli. The reduced antibacterial activity of selenium doped ZnO nanoparticles was attributed to two opposing factors, e.g., ROS generation for inhibition of growth, countered by sustaining growth of E. coli due to availability of Se micronutrients in culture media, confirmed by inductively coupled plasma mass spectrometer measurement. Higher ROS generation by selenium doped ZnO nanoparticles was attributed to creation of oxygen vacancies, confirmed from green emission peak observed at 565 nm. The impact of higher ROS generation by selenium doped ZnO nanoparticles was evident from enhanced photocatalytic degradation of trypan blue dye, than pristine ZnO nanoparticles. Copyright © 2013 Elsevier B.V. All rights reserved.

Synthesis of ZnO nanowires for thin film network transistors

NASA Astrophysics Data System (ADS)

Dalal, S. H.; Unalan, H. E.; Zhang, Y.; Hiralal, Pritesh; Gangloff, L.; Flewitt, Andrew J.; Amaratunga, Gehan A. J.; Milne, William I.

2008-08-01

Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.

Optical and structural properties of individual Co-doped ZnO microwires

NASA Astrophysics Data System (ADS)

Kolomys, O. F.; Strelchuk, V. V.; Rarata, S. V.; Hayn, R.; Savoyant, A.; Giovannelli, F.; Delorme, F.; Tkach, V.

2018-06-01

The Co-doped ZnO microwires (MWs) were grown using the optical furnace method. We used Scanning electron microscopy (SEM), polarized micro-Raman spectroscopy, photoluminescence (PL) and optical absorption spectroscopy to systematic investigation of the optical and structural properties of Co-doped ZnO MWs. The SEM analysis reveals that Co-doped ZnO MWs has hexagonal facets and cavity inside. The EDS results confirmed the presence and non-uniform distribution of Co impurities in the samples. Co doping of ZnO MWs leads to the decreased intensity, drastically broadening and high-energy shift of the NBE PL band. The red emission band at 1.85 eV originates from 2E(2G) → 4A2 (4F) intra-3d-transition of Co2+ in the ZnO lattice has been observed. The intense structured absorption bands within the near infrared ranges 3800-4800 and 5500-9000 cm-1 are caused by electronic spin-allowed transitions 4T2(F) ← 4A2(F) and 4T1(F) ← 4A2(F) of the tetrahedrally coordinated Co2+ (3 d7) ions substituting Zn2+ ions in Co-doped ZnO MWs. Micro-Raman studies of Co doped ZnO MWs show doping/disorder induced additional modes as compared to the undoped sample. The resonant enhancement of the additional local Co-related A1-symmetry Raman mode is observed in the parallel polarization geometry y(z , z) ybar . For the Co doped ZnO MWs, the enhancement of the additional Co-related local vibration mode with an increase in the excitation photon energy is also observed in the Raman spectra.

In situ biasing and off-axis electron holography of a ZnO nanowire

NASA Astrophysics Data System (ADS)

den Hertog, Martien; Donatini, Fabrice; McLeod, Robert; Monroy, Eva; Sartel, Corinne; Sallet, Vincent; Pernot, Julien

2018-01-01

Quantitative characterization of electrically active dopants and surface charges in nano-objects is challenging, since most characterization techniques using electrons [1-3], ions [4] or field ionization effects [5-7] study the chemical presence of dopants, which are not necessarily electrically active. We perform cathodoluminescence and voltage contrast experiments on a contacted and biased ZnO nanowire with a Schottky contact and measure the depletion length as a function of reverse bias. We compare these results with state-of-the-art off-axis electron holography in combination with electrical in situ biasing on the same nanowire. The extension of the depletion length under bias observed in scanning electron microscopy based techniques is unusual as it follows a linear rather than square root dependence, and is therefore difficult to model by bulk equations or finite element simulations. In contrast, the analysis of the axial depletion length observed by holography may be compared with three-dimensional simulations, which allows estimating an n-doping level of 1 × 1018 cm-3 and negative sidewall surface charge of 2.5 × 1012 cm-2 of the nanowire, resulting in a radial surface depletion to a depth of 36 nm. We found excellent agreement between the simulated diameter of the undepleted core and the active thickness observed in the experimental data. By combining TEM holography experiments and finite element simulation of the NW electrostatics, the bulk-like character of the nanowire core is revealed.

Ionic displacement induced ferroelectricity in multiferroic Cr doped ZnO

NASA Astrophysics Data System (ADS)

Tiwari, Jeetendra Kumar; Ali, Nasir; Ghosh, Subhasis

2018-05-01

Cr doped ZnO thin film was grown on quartz substrate using RF magnetron sputtering. Room temperature magnetic and ferroelectric properties of Cr doped ZnO were investigated. It is shown that ZnO becomes ferromagnetic upon Cr doping. It is considered that breaking of centrosymmetry due strain developed by doping of Cr should be responsible for the ferroelectricity. These films were characterized by X-ray diffraction (XRD), which shows that the films possess crystalline structure with preferred orientation along the (002) crystal plane and there is no extra peak due to Cr i.e. single phase.

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O 2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of themore » reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.« less

Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering

DOE PAGES

Yan, Danhua; Zhang, Wenrui; Cen, Jiajie; ...

2017-12-04

Zinc oxide (ZnO) nanowire arrays have potential applications for various devices including ultra-violet light emitting diodes and lasers, where photoluminescence of intense near band edge emission without defect emissions is usually desired. Here, we demonstrate, counter-intuitively, that the near band edge emission may become dominant by introducing certain surface defects to ZnO nanowires via surface engineering. Specifically, near band edge emission (NBE) is effectively enhanced after a low pressure O 2 plasma treatment that sputters off surface oxygen species to produce a reduced and oxygen vacancy-rich surface. The effect is attributed to the lowered surface valence band maximum of themore » reduced ZnO surface that creates an accumulative band bending, which screens the photo-generated minority carriers (holes) from reaching or being trapped by the surface defects.« less

Transmission type flat-panel X-ray source using ZnO nanowire field emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng

2015-12-14

A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at amore » range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.« less

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S.; Mukherjee, S.; Sarkar, K.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 10{sup 19 }cm{sup −3} for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurementsmore » confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.« less

Two-dimensional vanadium-doped ZnO nanosheet-based flexible direct current nanogenerator.

PubMed

Gupta, Manoj Kumar; Lee, Ju-Hyuck; Lee, Keun Young; Kim, Sang-Woo

2013-10-22

Here, we report the synthesis of lead-free single-crystalline two-dimensional (2D) vanadium(V)-doped ZnO nanosheets (NSs) and their application for high-performance flexible direct current (DC) power piezoelectric nanogenerators (NGs). The vertically aligned ZnO nanorods (NRs) converted to NS networks by V doping. Piezoresponse force microscopy studies reveal that vertical V-doped ZnO NS exhibit typical ferroelectricity with clear phase loops, butterfly, and well-defined hysteresis loops with a piezoelectric charge coefficient of up to 4 pm/V, even in 2D nanostructures. From pristine ZnO NR-based NGs, alternating current (AC)-type output current was observed, while from V-doped ZnO NS-based NGs, a DC-type output current density of up to 1.0 μAcm(-2) was surprisingly obtained under the same vertical compressive force. The growth mechanism, ferroelectric behavior, charge inverted phenomena, and high piezoelectric output performance observed from the V-doped ZnO NS are discussed in terms of the formation of an ionic layer of [V(OH)4(-)], permanent electric dipole, and the doping-induced resistive behavior of ZnO NS.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

PubMed Central

Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

2013-01-01

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

Elemental, morphological, structural, optical, and magnetic properties of erbium doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Poornaprakash, B.; Chalapathi, U.; Purusottam Reddy, B.; Prabhakar Vattikuti, S. V.; Siva Pratap Reddy, M.; Park, Si-Hyun

2018-03-01

The sensible tuning of the structural, optical, and magnetic properties of ZnO nanoparticles (NPs) with suitable doping can enhance their applicability in diverse fields. In this study, we synthesized ZnO NPs with Er (0-4 at%) doping and their elemental, structural, optical, and magnetic properties were studied. Both field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM) studies of the suspensions consist of hexagonal shaped NPs. All the prepared NPs exhibited hexagonal phase as demonstrated by powder x-ray diffraction studies. A blue shift was observed in the Er doped ZnO NPs compared to pure ZnO, indicating the increased optical bandgap. Vibrating sample magnetometer studies exhibited the pure ZnO NPs was typical diamagnetic feature whereas all the Er doped ZnO NPs were paramagnetic feature at 300 K. This is the first paramagnetic report on Er doped ZnO NPs.

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

NASA Astrophysics Data System (ADS)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

Structural and electrical properties of trimethylboron-doped silicon nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lew, K.-K.; Pan Ling; Bogart, Timothy E.

2004-10-11

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. Themore » difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.« less

Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Shalendra, E-mail: shailuphy@gmail.com; School of Materials Science and Engineering, Changwon National University, Changwon, Gyeongnam 641-773; Song, T.K., E-mail: tksong@changwon.ac.kr

Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L{sub 3,2} NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanningmore » electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L{sub 3,2} edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles.« less

Integration of ZnO and CuO nanowires into a thermoelectric module

PubMed Central

Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Summary Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices. PMID:24991531

Integration of ZnO and CuO nanowires into a thermoelectric module.

PubMed

Zappa, Dario; Dalola, Simone; Faglia, Guido; Comini, Elisabetta; Ferroni, Matteo; Soldano, Caterina; Ferrari, Vittorio; Sberveglieri, Giorgio

2014-01-01

Zinc oxide (ZnO, n-type) and copper oxide (CuO, p-type) nanowires have been synthesized and preliminarily investigated as innovative materials for the fabrication of a proof-of-concept thermoelectric device. The Seebeck coefficients, electrical conductivity and thermoelectric power factors (TPF) of both semiconductor materials have been determined independently using a custom experimental set-up, leading to results in agreement with available literature with potential improvement. Combining bundles of ZnO and CuO nanowires in a series of five thermocouples on alumina leads to a macroscopic prototype of a planar thermoelectric generator (TEG) unit. This demonstrates the possibility of further integration of metal oxide nanostructures into efficient thermoelectric devices.

Synthesis and magnetic properties of Zr doped ZnO Nanoparticles.

PubMed

Zhang, Jing; Gao, Daqiang; Yang, Guijin; Zhang, Jinlin; Shi, Zhenhua; Zhang, Zhaohui; Zhu, Zhonghua; Xue, Desheng

2011-11-10

Zr doped ZnO nanoparticles are prepared by the sol-gel method with post-annealing. X-ray diffraction results show that all samples are the typical hexagonal wurtzite structure without any other new phase, as well as the Zr atoms have successfully entered into the ZnO lattices instead of forming other lattices. Magnetic measurements indicate that all the doping samples show room temperature ferromagnetism and the pure ZnO is paramagneism. The results of Raman and X-ray photoelectron spectroscopy indicate that there are a lot of oxygen vacancies in the samples by doping element of Zr. It is considered that the observed ferromagnetism is related to the doping induced oxygen vacancies.

Optical properties of Mg doped p-type GaN nanowires

NASA Astrophysics Data System (ADS)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S.; Tyagi, A. K.

2015-06-01

Mg doped p-type GaN nanowires are grown using chemical vapor deposition technique in vapor-liquid-solid (VLS) process. Morphological and structural studies confirm the VLS growth process of nanowires and wurtzite phase of GaN. We report the optical properties of Mg doped p-type GaN nanowires. Low temperature photoluminescence studies on as-grown and post-growth annealed samples reveal the successful incorporation of Mg dopants. The as-grwon and annealed samples show passivation and activation of Mg dopants, respectively, in GaN nanowires.

Ultra-fast microwave-assisted hydrothermal synthesis of long vertically aligned ZnO nanowires for dye-sensitized solar cell application.

PubMed

Mahpeykar, S M; Koohsorkhi, J; Ghafoori-Fard, H

2012-04-27

Long vertically aligned ZnO nanowire arrays were synthesized using an ultra-fast microwave-assisted hydrothermal process. Using this method, we were able to grow ZnO nanowire arrays at an average growth rate as high as 200 nm min(-1) for maximum microwave power level. This method does not suffer from the growth stoppage problem at long growth times that, according to our investigations, a normal microwave-assisted hydrothermal method suffers from. Longitudinal growth of the nanowire arrays was investigated as a function of microwave power level and growth time using cross-sectional FESEM images of the grown arrays. Effect of seed layer on the alignment of nanowires was also studied. X-ray diffraction analysis confirmed c-axis orientation and single-phase wurtzite structure of the nanowires. J-V curves of the fabricated ZnO nanowire-based mercurochrome-sensitized solar cells indicated that the short-circuit current density is increased with increasing the length of the nanowire array. According to the UV-vis spectra of the dyes detached from the cells, these increments were mainly attributed to the enlarged internal surface area and therefore dye loading enhancement in the lengthened nanowire arrays.

Impedance measurement of Cobalt doped ZnO Quantum dots

NASA Astrophysics Data System (ADS)

Tiwari, Ram; Kaphle, Amrit; Hari, Parameswar

We investigated structural, thermal and electrical properties of ZnO Quantum dots grown by precipitation method. QDs were spin coated on ITO and annealed at various temperatures ranging from 1000C to 300 0C. ZnO QDs were doped with cobalt for concentration ranging from 0-15%. XRD measurement showed increase in bond length, strain, dislocation density and Cell volume as the doping level varied from 0% to 15%. Impedance Spectroscopy measurements represented by Cole-Cole plot showed reduction in resistance as the cobalt doping concentration increased from 0-15%. Thermal activation energy was obtained by plotting resistivity Vs temperature for doped samples at temperatures from 1000C to 3000C. The thermal activation energy decreased from 85.13meV to 58.21meV as doping increased from 0-15%. Relaxation time was extracted by fitting data to RC model. Relaxation time varied from 61.57 ns to 3.76 ns as the cobalt concentration increased from 0% to 15%. We will also discuss applications of cobalt doped ZnO QDs on improving conversion efficiency of solar cells.

Growth and characterization of manganese doped gallium nitride nanowires.

PubMed

Kumar, V Suresh; Kesavamoorthy, R; Kumar, J

2008-08-01

Manganese doped GaN nanowires have been grown by chemical vapour transport method on sapphire (0001) substrates in the temperature range of 800-1050 degrees C. The surface features of nanowires have been investigated using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray analysis (EDAX), Raman scattering studies and Electron Paramagnetic Resonance (EPR). SEM images showed that the morphology of the one dimensional materials included straight nanorods and nanowires around 70-80 nm. Raman spectrum showed the GaMnN vibrational modes at 380, 432 and 445 cm(-1). EPR measurements were performed on Mn doped GaN nanowires in order to evaluate the magnetic behaviour.

Fabrication of GaN doped ZnO nanocrystallines by laser ablation.

PubMed

Gopalakrishnan, N; Shin, B C; Bhuvana, K P; Elanchezhiyan, J; Balasubramanian, T

2008-08-01

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Lattice diffusion and vapor solid growths forming nanoarchitectures on ZnO nanowires

NASA Astrophysics Data System (ADS)

Sombrio, Guilherme; Rivaldo-Gómez, C. M.; Pomar, Cesar A. D.; Souza, Jose A.

2017-12-01

We report hierarchical nanoarchitectures formed on the tips and sidewalls of ZnO nanowires which is formed on the top of microtubes. The whole growth process of these micro/nanostructures during thermal oxidation combines lattice/grain/surface ionic diffusion along with vapor solid mechanism. All the process takes place along with the presence of an electric current, which plays an important role forming the ZnO molecules due to Zn metal evaporation and attracting them to condense into nanostructures of several morphologies. The observation of a very long needle-like nanowire reveals the stack nature of the growth. These nanoarchitectures are rarely observed experimentally. Raman scattering confirms phonon confinement in the nanostructures. Photoluminescence measurements indicate a route for engineering defects on the surface of ZnO microtubes after the complete coalescence of the nanostructures through heat treatment. This experiment would be useful for improving nanostructure organization which could provide an impact in the manufacturability of nanostructure-based systems.

Veritable electronic characteristics in ZnO nanowire circuits uncovered by the four-terminal method at a low temperature

NASA Astrophysics Data System (ADS)

Li, Xin; Zhang, Qi

2017-04-01

Understanding the natural electrical properties in semiconductor channels and the carrier transport across the metal-semiconductor contact is essential to improve the performance of nanowire devices. This work presents the true electronic characteristics of ZnO nanowire devices measured by a four-electrode method at a low-temperature environment. The temperature rise leads to the decrease in near-band-gap emission, which is attributed to two non-radiative recombination processes. For ZnO circuits, thermionic emission carrier transport mechanism plays a dominant role at Ti-Au/ZnO interface and the transport mechanism in ZnO nanowires is governed by two competitive thermal activation conduction processes: optical or acoustic phonons assisting hopping.

Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

DTIC Science & Technology

2009-04-24

it seems at a first glance, because the isovalent co- doping of ZnO will result also in an increase of the band gap which usually gives rise to an...J.G. Lu, H.P. He, L.X. Chen, X.Q. Gu, J.Y. Huang, L.P. Zhu, and B.H. Zhao, “Na doping concentration tuned conductivity of ZnO films via pulsed laser...recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3

Influence of Co doping on combined photocatalytic and antibacterial activity of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Anandan, M.; Dinesh, S.; Krishnakumar, N.; Balamurugan, K.

2016-11-01

The present work aims to investigate the structural, optical, photocatalyst and antibacterial properties of bare and cobalt doped ZnO nanoparticles (NPs) with different concentrations Zn1-x Co x O (x = 0, 0.03, 0.06 and 0.09) synthesized by co-precipitation method. The XRD patterns confirmed that all samples of cobalt doped ZnO nanostructures revealed the formation of single phase having hexagonal wurtzite structure with crystallite size in the range of 31-41 nm. Further, the decreasing trend in lattice parameters and grain sizes were also seen with increasing doping concentrations which confirms the incorporation of Co ions into the ZnO lattice. This result was further supported by the FT-IR data. HR-TEM images demonstrated the distinct hexagonal like morphology with small agglomeration. The UV-visible absorption spectra exhibits red shift with increase in Co doping concentration in ZnO while corresponding bandgap energy of cobalt doped ZnO NPs decreased with increased Co doping concentration. PL spectra showed a weak UV and visible emission band which may be ascribed to the reduction in oxygen vacancy and defects by cobalt doping. XPS and EDX spectral results confirm the composition and the purity of Co doped ZnO NPs. Furthermore, the Co doped ZnO NPs were found to exhibit lesser photocatalytic activity for the degradation of methyl green dye under UV light illumination in comparison with the bare ZnO NPs. Moreover, anti-bacterial studies reveals that the Co doped ZnO NPs possess more antibacterial effect against gram positive Basillus subtills and gram negative Klebsiella pneumoniae bacterial strains than the bare ZnO NPs.

A ZnO nanowire bio-hybrid solar cell

NASA Astrophysics Data System (ADS)

Yaghoubi, Houman; Schaefer, Michael; Yaghoubi, Shayan; Jun, Daniel; Schlaf, Rudy; Beatty, J. Thomas; Takshi, Arash

2017-02-01

Harvesting solar energy as a carbon free source can be a promising solution to the energy crisis and environmental pollution. Biophotovoltaics seek to mimic photosynthesis to harvest solar energy and to take advantage of the low material costs, negative carbon footprint, and material abundance. In the current study, we report on a combination of zinc oxide (ZnO) nanowires with monolayers of photosynthetic reaction centers which are self-assembled, via a cytochrome c linker, as photoactive electrode. In a three-probe biophotovoltaics cell, a photocurrent density of 5.5 μA cm-2 and photovoltage of 36 mV was achieved, using methyl viologen as a redox mediator in the electrolyte. Using ferrocene as a redox mediator a transient photocurrent density of 8.0 μA cm-2 was obtained, which stabilized at 6.4 μA cm-2 after 20 s. In-depth electronic structure characterization using photoemission spectroscopy in conjunction with electrochemical analysis suggests that the fabricated photoactive electrode can provide a proper electronic path for electron transport all the way from the conduction band of the ZnO nanowires, through the protein linker to the RC, and ultimately via redox mediator to the counter electrode.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition.

PubMed

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D; Renevier, Hubert; Consonni, Vincent

2017-03-03

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 10 7 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

NASA Astrophysics Data System (ADS)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscaleengineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol–gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on themore » macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscaleengineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.« less

Single and couple doping ZnO nanocrystals characterized by positron techniques

NASA Astrophysics Data System (ADS)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

One-Step Synthesis of Monodisperse In-Doped ZnO Nanocrystals

NASA Astrophysics Data System (ADS)

Wang, Qing Ling; Yang, Ye Feng; He, Hai Ping; Chen, Dong Dong; Ye, Zhi Zhen; Jin, Yi Zheng

2010-05-01

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the products indicate the incorporation of indium into the host ZnO lattices. The individual nanocrystals with cubic structures were observed in the 5% In-ZnO reaction, due to the relatively high reactivity of indium precursors. Our study would provide further insights for the growth of doped oxide nanocrystals, and deepen the understanding of doping process in colloidal nanocrystal syntheses.

Earth-Abundant Oxygen Evolution Catalysts Coupled onto ZnO Nanowire Arrays for Efficient Photoelectrochemical Water Cleavage

PubMed Central

Jiang, Chaoran; Moniz, Savio J A; Khraisheh, Majeda; Tang, Junwang

2014-01-01

ZnO has long been considered as a model UV-driven photoanode for photoelectrochemical water splitting, but its performance has been limited by fast charge-carrier recombination, extremely poor stability in aqueous solution, and slow kinetics of water oxidation. These issues were addressed by applying a strategy of optimization and passivation of hydrothermally grown 1D ZnO nanowire arrays. The length and diameter of bare ZnO nanowires were optimized by varying the growth time and precursor concentration to achieve optimal photoelectrochemical performance. The addition of earth-abundant cobalt phosphate (Co-Pi) and nickel borate (Ni-B) oxygen evolution catalysts onto ZnO nanowires resulted in substantial cathodic shifts in onset potential to as low as about 0.3 V versus the reversible hydrogen electrode (RHE) for Ni-B/ZnO, for which a maximum photocurrent density of 1.1 mA cm−2 at 0.9 V (vs. RHE) with applied bias photon-to-current efficiency of 0.4 % and an unprecedented near-unity incident photon-to-current efficiency at 370 nm. In addition the potential required for saturated photocurrent was dramatically reduced from 1.6 to 0.9 V versus RHE. Furthermore, the stability of these ZnO nanowires was significantly enhanced by using Ni-B compared to Co-Pi due to its superior chemical robustness, and it thus has additional functionality as a stable protecting layer on the ZnO surface. These remarkable enhancements in both photocatalytic activity and stability directly address the current severe limitations in the use of ZnO-based photoelectrodes for water-splitting applications, and can be applied to other photoanodes for efficient solar-driven fuel synthesis. PMID:25156820

Highly sensitive H2 gas sensor of Co doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Bhati, Vijendra Singh; Ranwa, Sapana; Kumar, Mahesh

2018-04-01

In this report, the hydrogen gas sensing properties based on Co doped ZnO nanostructures are explored. The undoped and Co doped nanostructures were grown by RF magnetron sputtering system, and its structural, morphological, and hydrogen sensing behavior are investigated. The maximum relative response was occurred by the 2.5% Co doped ZnO nanostructures among undoped and other doped sensors. The enhancement of relative response might be due to large chemisorbed sites formation on the ZnO surface for the reaction to hydrogen gas.

Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Kyoung-Bo

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al contentmore » in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.« less

Metal-Insulator Transition in W-doped VO2 Nanowires

NASA Astrophysics Data System (ADS)

Long, Gen; Parry, James; Whittaker, Luisa; Banerjee, Sarbajit; Zeng, Hao

2010-03-01

We report a systematic study of the metal-insulator transition in W-doped VO2 nanowires. Magnetic susceptibility were measured for a bulk amount of VO2 nanowire powder. The susceptibility shows a sharp drop with decreasing temperature corresponding to the metal-insulator transition. The transition shows large temperature hysteresis for cooling and heating. With increasing doping concentration, the transition temperatures decreases systematically from 320 K to 275K. Charge transport measurements on the same nanowires showed similar behavior. XRD and TEM measurements were taken to further determine the structure of the materials in study.

Synthesis and photonic property study of ZnO nanowires for a real time photodynamic therapy monitoring probe

NASA Astrophysics Data System (ADS)

Sridhar, D.; Xie, Jining; Abraham, Jose K.; Varadan, Vijay K.

2007-04-01

In this paper, we present how the photonic properties of zinc oxide (ZnO) nanowires can be used to potentially advance the effectiveness of Photodynamic therapy (PDT), one of the most recent and promising approaches among cancer therapies. Presently, PDT employs laser light to activate intravenously or topically administered photosensitizers to give rise to highly reactive singlet oxygen which has a very short lifetime and is capable of biochemical damage to cell membranes of the tumor. A probe that can monitor in real time the penetration depth of the laser in the tumor and also the evolution of the singlet oxygen, which is critical for tumor eradication, is capable of improving the efficacy of PDT quite significantly. Such a probe, by providing real time feedback, can help us determine whether to increase or decrease the light exposure dose and also if further local administration of photosensitizers is required or not. ZnO nanowires are known to be photoconductive and recent research also demonstrated the temperature dependence of the photocurrent in the nanowires. They are also sensitive to blue and other near UV spectra which is same range of activation wavelengths of most photosensitizers, and hence making them a good candidate for a potential PDT monitoring probe. ZnO nanowires were fabricated on silicon substrates by vapor phase deposition using e-beam evaporated gold as a catalyst. Control of the dimensions of the nanowires could be achieved by varying the dimensions of the catalyst by means of e-beam evaporation process. Photoluminescence properties of ZnO nanowires were investigated at UV and near UV wavelengths. Further, ZnO is also known for its antimicrobial properties, thereby ruling out any possibility of bacterial infection because of the implanted probe. This study was done to compliment the existing expertise of our research group in the design and fabrication of several nanowire based probes and microsensors specifically for neuroelectronic and

Electronic structure, magnetic and structural properties of Ni doped ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Shalendra, E-mail: shailuphy@gmail.com; Vats, Prashant; Gautam, S.

Highlights: • XRD, and HR-TEM results show the single phase nature of Ni doped ZnO nanoparticles. • dc magnetization results indicate the RT-FM in Ni doped ZnO nanoparticles. • Ni L{sub 3,2} edge NEXAFS spectra infer that Ni ions are in +2 valence state. • O K edge NEXAFS spectra show that O vacancy increases with Ni doping in ZnO. - Abstract: We report structural, magnetic and electronic structural properties of Ni doped ZnO nanoparticles prepared by auto-combustion method. The prepared nanoparticles were characterized by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), near edge X-ray absorption finemore » structure (NEXAFS) spectroscopy, and dc magnetization measurements. The XRD and HR-TEM results indicate that Ni doped ZnO nanoparticles have single phase nature with wurtzite lattice and exclude the presence of secondary phase. NEXAFS measurements performed at Ni L{sub 3,2}-edges indicates that Ni ions are in +2 valence state and exclude the presence of Ni metal clusters. O K-edge NEXAFS spectra indicate an increase in oxygen vacancies with Ni-doping, while Zn L{sub 3,2}-edge show the absence of Zn-vacancies. The magnetization measurements performed at room temperature shows that pure and Ni doped ZnO exhibits ferromagnetic behavior.« less

n-type doping and morphology of GaAs nanowires in Aerotaxy

DOE PAGES

Metaferia, Wondwosen; Sivakumar, Sudhakar; Persson, Axel R.; ...

2018-05-10

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphologicalmore » quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10 -3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 10 19 cm -3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.« less

n-type doping and morphology of GaAs nanowires in Aerotaxy

NASA Astrophysics Data System (ADS)

Metaferia, Wondwosen; Sivakumar, Sudhakar; Persson, Axel R.; Geijselaers, Irene; Reine Wallenberg, L.; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H.

2018-07-01

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au–Ga–Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 °C and 530 °C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 × 10‑3. The wires are pure zinc-blende for all investigated growth conditions, whereas nanowires grown by metal-organic vapor phase epitaxy with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1–3) × 1019 cm‑3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm‑3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

n-type doping and morphology of GaAs nanowires in Aerotaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metaferia, Wondwosen; sivakumar, sudhakar; R. Persson, Axel

2018-04-17

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphologicalmore » quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10-3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.« less

n-type doping and morphology of GaAs nanowires in Aerotaxy.

PubMed

Metaferia, Wondwosen; Sivakumar, Sudhakar; Persson, Axel R; Geijselaers, Irene; Wallenberg, L Reine; Deppert, Knut; Samuelson, Lars; Magnusson, Martin H

2018-04-17

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 °C and 530 °C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 × 10 -3 . The wires are pure zinc-blende for all investigated growth conditions, whereas nanowires grown by metal-organic vapor phase epitaxy with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1-3) × 10 19 cm -3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 10 19 cm -3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.

n-type doping and morphology of GaAs nanowires in Aerotaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metaferia, Wondwosen; Sivakumar, Sudhakar; Persson, Axel R.

Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 and 530 degrees C, respectively, resulted in good morphologicalmore » quality nanowires for a flow ratio of TESn to TMGa up to 2.25 x 10 -3. The wires are pure Zinc-blende for all investigated growth conditions, whereas nanowires grown by MOVPE with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1- 3) x 10 19 cm -3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.« less

Facile one-step synthesis of magnesium-doped ZnO nanoparticles: optical properties and their device applications

NASA Astrophysics Data System (ADS)

Oh, Ji-Young; Lim, Sang-Chul; Ahn, Seong Deok; Lee, Sang Seok; Cho, Kyoung-Ik; Bon Koo, Jae; Choi, Rino; Hasan, Musarrat

2013-07-01

In this study, magnesium-doped (Mg-doped) zinc oxide (ZnO) nanoparticles were successfully synthesized by a sonochemical process under mild conditions. The x-ray diffraction pattern indicated that the Mg-doped ZnO nanoparticles maintain a wurtzite structure without impurities. We observed a blue-shift of the bandgap of the Mg-doped ZnO nanoparticles as the Mg-doping ratio increased. We also fabricated thin-film transistor (TFT) devices with the doped-ZnO nanoparticles. Devices using Mg-doped ZnO nanoparticles as a channel layer showed insensibility to white-light irradiation compared with undoped ZnO TFTs.

Synthesis, structural and optical properties of silver nanoparticles uniformly decorated ZnO nanowires

NASA Astrophysics Data System (ADS)

Zhang, Ke-Xin; Wen, Xing; Yao, Cheng-Bao; Li, Jin; Zhang, Meng; Li, Qiang-Hua; Sun, Wen-Jun; Wu, Jia-Da

2018-04-01

Silver (Ag) nanoparticles decorated Zinc oxide (A-ZnO) nanowires have been successfully synthesized by two-step chemical vapour deposition and magnetron sputtering method. The X-ray diffraction patterns revealed their hexagonal wurtzite structure. SEM images indicated the Ag nanoparticles are distributed uniformly on the surface of A-ZnO nanowires. By extending the sputtering time, the atomic percent of Ag increased gradually. Moreover, the photoluminescence results demonstrated two major emission peaks for the A-ZnO nanowires. Where, the visible emission peaks were stronger than those of unmodified ZnO nanowires. These studies promise their potential applications in multifunctional optical devices.

Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Jaspal, E-mail: jaspal0314@gmail.com; Vashihth, A.; Gill, Pritampal Singh

Zn{sub 1-x}Mg{sub x}O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could bemore » attributed to decrease of oxygen vacancies present in host nanoparticles.« less

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Size-dependent Young’s modulus in ZnO nanowires with strong surface atomic bonds

NASA Astrophysics Data System (ADS)

Fan, Shiwen; Bi, Sheng; Li, Qikun; Guo, Qinglei; Liu, Junshan; Ouyang, Zhongliang; Jiang, Chengming; Song, Jinhui

2018-03-01

The mechanical properties of size-dependent nanowires are important in nano-electro-mechanical systems (NEMSs), and have attracted much research interest. Characterization of the size effect of nanowires in atmosphere directly to broaden their practical application instead of just in high vacuum situations, as reported previously, is desperately needed. In this study, we systematically studied the Young’s modulus of vertical ZnO nanowires in atmosphere. The diameters ranged from 48 nm to 239 nm with a resonance method using non-contact atomic force microscopy. The values of Young’s modulus in atmosphere present extremely strong increasing tendency with decreasing diameter of nanowire due to stronger surface atomic bonds compared with that in vacuum. A core-shell model for nanowires is proposed to explore the Young’s modulus enhancement in atmosphere, which is correlated with atoms of oxygen occurring near the nanowire surface. The modified model is more accurate for analyzing the mechanical behavior of nanowires in atmosphere compared with the model in vacuum. Furthermore, it is possible to use this characterization method to measure the size-related elastic properties of similar wire-sharp nanomaterials in atmosphere and estimate the corresponding mechanical behavior. The study of the size-dependent Young’s modulus in ZnO nanowires in atmosphere will improve the understanding of the mechanical properties of nanomaterials as well as providing guidance for applications in NEMSs, nanogenerators, biosensors and other related areas.

On the difficulties in characterizing ZnO nanowires.

PubMed

Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A

2008-09-10

The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Darunkar, Swapnil S.; Acharya, Smita A.

2018-05-01

Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

Sulfur-Doped Zinc Oxide (ZnO) Nanostars: Synthesis and Simulation of Growth Mechanism

DTIC Science & Technology

2011-10-01

Zinc Oxide ( ZnO ) Nanostars: Synthesis and Simulation of Growth Mechanism Jinhyun Cho1, Qiubao Lin2,3, Sungwoo...characterization, and ab initio simulations of star-shaped hexagonal zinc oxide ( ZnO ) nanowires. The ZnO nanostructures were synthesized by a low...Introduction Zinc oxide ( ZnO ) is a wide bandgap (3.37 eV), Ⅱ–Ⅵ semiconductor of great interest for optoelectronic applications [1–3]. Its

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

PubMed Central

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-01-01

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

PubMed

Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

2016-03-24

In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

Estimation of electron–phonon coupling and Urbach energy in group-I elements doped ZnO nanoparticles and thin films by sol–gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vettumperumal, R.; Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in; Santoshkumar, B.

Highlights: • Comparison of group-I elements doped ZnO nanoparticles and thin films. • Calculation of electron–phonon coupling and phonon lifetime from Raman spectroscopy. • Estimation of interband states from Urbach energy. - Abstract: Group-I (Li, Na, K & Cs) elements doped ZnO nanoparticles (NPs) and thin films were prepared using sol–gel method. XRD data and TEM images confirm the absence of any other secondary phase different from wurtzite type ZnO. Spherical shapes of grains are observed from the surfaces of doped ZnO films by atomic force microscope images (AFM) and presences of dopants are confirmed from energy dispersive X-ray spectra.more » The Raman active E{sub 2} (high), E{sub 2} (low), E{sub 1} and A{sub 1} (LO) modes are observed from both ZnO NPs and thin films. First-order longitudinal optical (LO) phonon is found to have contributions from direct band transition and localized excitons. Electron–phonon coupling, phonon lifetime and deformation energy of ZnO are calculated based on the effect of dopants with respect to the multiple Raman LO phonon scattering. Presence of localized interbands states in doped ZnO NPs and thin films are found from the Urbach energy calculations.« less

Preparation and electrical properties of electrospun tin-doped indium oxide nanowires

NASA Astrophysics Data System (ADS)

Lin, Dandan; Wu, Hui; Zhang, Rui; Pan, Wei

2007-11-01

Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinning process. The Sn doping mechanism and microstructure have been characterized by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices for I-V measurement and field-effect transistors (FETs) were assembled using ITO nanowires with top contact configurations. The effect of Sn doping on the electrical conductivity was significant in that it enhanced the conductance by over 107 times, up to ~1 S cm-1 for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETs were operated in the depletion mode with an electron mobility of up to 0.45 cm2 V-1 s-1 and an on/off ratio of 103.

The formation of tungsten doped Al2O3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

NASA Astrophysics Data System (ADS)

Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

2016-07-01

Tungsten doped Al2O3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na2WO4·2H2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al2O3, ZnO, metallic tungsten and WO3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al2O3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al2O3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al2O3/ZnO coatings is higher thanof undoped Al2O3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na2WO4·2H2O. Tungsten in Al2O3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires.

PubMed

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-16

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g -1 at a scan rate of 20 mV s -1 , which is almost twice that of ZnO NWs (191.5 F g -1 ). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g -1 at a current density of 1.33 A g -1 with an energy density of 25.2 W h kg -1 at the power density of 896.44 W kg -1 . In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

NASA Astrophysics Data System (ADS)

He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

2017-06-01

In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

NASA Astrophysics Data System (ADS)

Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

2017-05-01

ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taheri, Ali, E-mail: at1361@aut.ac.ir, E-mail: atahery@aeoi.org.ir; Saramad, Shahyar; Setayeshi, Saeed

In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodepositionmore » setup with an acceptable quality.« less

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

NASA Astrophysics Data System (ADS)

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-04-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm-1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires.

PubMed

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

2017-09-14

The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of an amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In 2 O 3 , SnO 2 , Te and TeO 2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere leads to rapid oxidation of the surface within only one minute. Characterization of electrical conductivity σ, thermopower S, and thermal conductivity κ was performed on the same In-doped nanowire which shows suppressed σ and κ but enhanced S yielding an improved thermoelectric figure of merit ZT compared to the undoped SnTe.

Highly Sensitive and Selective Ethanol Sensor Fabricated with In-Doped 3DOM ZnO.

PubMed

Wang, Zhihua; Tian, Ziwei; Han, Dongmei; Gu, Fubo

2016-03-02

ZnO is an important n-type semiconductor sensing material. Currently, much attention has been attracted to finding an effective method to prepare ZnO nanomaterials with high sensing sensitivity and excellent selectivity. A three-dimensionally ordered macroporous (3DOM) ZnO nanostructure with a large surface area is beneficial to gas and electron transfer, which can enhance the gas sensitivity of ZnO. Indium (In) doping is an effective way to improve the sensing properties of ZnO. In this paper, In-doped 3DOM ZnO with enhanced sensitivity and selectivity has been synthesized by using a colloidal crystal templating method. The 3DOM ZnO with 5 at. % of In-doping exhibits the highest sensitivity (∼88) to 100 ppm ethanol at 250 °C, which is approximately 3 times higher than that of pure 3DOM ZnO. The huge improvement to the sensitivity to ethanol was attributed to the increase in the surface area and the electron carrier concentration. The doping by In introduces more electrons into the matrix, which is helpful for increasing the amount of adsorbed oxygen, leading to high sensitivity. The In-doped 3DOM ZnO is a promising material for a new type of ethanol sensor.

Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays.

PubMed

Soman, Pranav; Darnell, Max; Feldman, Marc D; Chen, Shaochen

2011-08-01

A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

Fabrication of a Combustion-Reacted High-Performance ZnO Electron Transport Layer with Silver Nanowire Electrodes for Organic Solar Cells.

PubMed

Park, Minkyu; Lee, Sang-Hoon; Kim, Donghyuk; Kang, Juhoon; Lee, Jung-Yong; Han, Seung Min

2018-02-28

Herein, a new methodology for solution-processed ZnO fabrication on Ag nanowire network electrode via combustion reaction is reported, where the amount of heat emitted during combustion was minimized by controlling the reaction temperature to avoid damaging the underlying Ag nanowires. The degree of participation of acetylacetones, which are volatile fuels in the combustion reaction, was found to vary with the reaction temperature, as revealed by thermogravimetric and compositional analyses. An optimized processing temperature of 180 °C was chosen to successfully fabricate a combustion-reacted ZnO and Ag nanowire hybrid electrode with a sheet resistance of 30 Ω/sq and transmittance of 87%. A combustion-reacted ZnO on Ag nanowire hybrid structure was demonstrated as an efficient transparent electrode and electron transport layer for the PTB7-Th-based polymer solar cells. The superior electrical conductivity of combustion-reacted ZnO, compared to that of conventional sol-gel ZnO, increased the external quantum efficiency over the entire absorption range, whereas a unique light scattering effect due to the presence of nanopores in the combustion-derived ZnO further enhanced the external quantum efficiency in the 450-550 nm wavelength range. A power conversion efficiency of 8.48% was demonstrated for the PTB7-Th-based polymer solar cell with the use of a combustion-reacted ZnO/Ag NW hybrid transparent electrode.

Mg-doped ZnO nanoparticles for efficient sunlight-driven photocatalysis.

PubMed

Etacheri, Vinodkumar; Roshan, Roshith; Kumar, Vishwanathan

2012-05-01

Magnesium-doped ZnO (ZMO) nanoparticles were synthesized through an oxalate coprecipitation method. Crystallization of ZMO upon thermal decomposition of the oxalate precursors was investigated using differential scanning calorimetry (DSC) and X-ray diffraction (XRD) techniques. XRD studies point toward a significant c-axis compression and reduced crystallite sizes for ZMO samples in contrast to undoped ZnO, which was further confirmed by HRSEM studies. X-ray photoelectron spectroscopy (XPS), UV/vis spectroscopy and photoluminescence (PL) spectroscopy were employed to establish the electronic and optical properties of these nanoparticles. (XPS) studies confirmed the substitution of Zn(2+) by Mg(2+), crystallization of MgO secondary phase, and increased Zn-O bond strengths in Mg-doped ZnO samples. Textural properties of these ZMO samples obtained at various calcination temperatures were superior in comparison to the undoped ZnO. In addition to this, ZMO samples exhibited a blue-shift in the near band edge photoluminescence (PL) emission, decrease of PL intensities and superior sunlight-induced photocatalytic decomposition of methylene blue in contrast to undoped ZnO. The most active photocatalyst 0.1-MgZnO obtained after calcination at 600 °C showed a 2-fold increase in photocatalytic activity compared to the undoped ZnO. Band gap widening, superior textural properties and efficient electron-hole separation were identified as the factors responsible for the enhanced sunlight-driven photocatalytic activities of Mg-doped ZnO nanoparticles.

A vanadium-doped ZnO nanosheets-polymer composite for flexible piezoelectric nanogenerators

NASA Astrophysics Data System (ADS)

Shin, Sung-Ho; Kwon, Yang Hyeog; Lee, Min Hyung; Jung, Joo-Yun; Seol, Jae Hun; Nah, Junghyo

2016-01-01

We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices.We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ~32 V and ~6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07185b

Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

PubMed

Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

2012-01-01

Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

Fabrication of ZnO and doped ZnO waveguides deposited by Spin Coating

NASA Astrophysics Data System (ADS)

Mohan, Rosmin Elsa; R, Neha P.; T, Shalu; C, Darshana K.; Sreelatha, K. S.

2015-02-01

In this paper, the synthesis of ZnO and doped Zn1-xAgxO (where x=0.03) nanoparticles by co- precipitation is reported. The precursors used were Zinc Nitrate and Potassium hydroxide pellets. For doping, 3% AgNO3 in ZnNO3 was considered as a separate buffer solution. The prepared nanoparticles were subsequently spin coated onto silica glass substrates at a constant chuck rate of 3000 rpm. The substrate acts as the lower cladding of a waveguide structure. The upper cladding is assumed to be air in the present investigation. The nanostructures of the ZnO powders in the doped and undoped cases were studied using X-ray Diffraction patterns. There was a decrease in the grain size with doping which increase the tunability of the powders to be used as photoluminescent devices. The optical characteristics of the sample were also investigated using UV-Visible spectrophotometer at 200-900 nm wavelengths. The photoluminescence peaks also report a dramatic increase in intensity at the same wavelength for the doped case compared to the undoped one.

Single ZnO nanowire-PZT optothermal field effect transistors.

PubMed

Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

2012-09-07

A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

PubMed

Baek, Eunhye; Rim, Taiuk; Schütt, Julian; Baek, Chang-Ki; Kim, Kihyun; Baraban, Larysa; Cuniberti, Gianaurelio

2017-11-08

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multiple conduction bands with different band gap energies that would be a distinct optoelectronic property of indirect band gap semiconductor. We attribute the main driving force of NPC in Si nanowire FETs to the photogenerated hot electrons trapping by dopants ions and interfacial states. Finally, comparing back- and top-gate modulation, we derive the mechanisms of the transition between negative and positive photoconductance regimes in nanowire devices. The transition is decided by the competition between the light-induced interfacial trapping and the recombination of mobile carriers, which is dependent on the light intensity and the doping concentration.

A detailed study on Sn4+ doped ZnO for enhanced photocatalytic degradation

NASA Astrophysics Data System (ADS)

Beura, Rosalin; Pachaiappan, R.; Thangadurai, P.

2018-03-01

The samples of Sn4+ doped (1, 5, 10, 15, 20 & 30%) ZnO nanostructures were synthesized by a low temperature hydrothermal method. Structural analysis by XRD and Raman spectroscopy showed the hexagonal wurtzite phase of ZnO and the formation of a secondary phase Zn2SnO4 beyond 10% doping of Sn4+. Microstructural analysis by TEM also confirmed the wurtzite ZnO with rod as well as particle like structure. Presence of various functional groups (sbnd OH, sbnd CH, Znsbnd O) were confirmed by FTIR. Optical properties were studied by UV-vis absorption, photoluminescence emission spectroscopies and lifetime measurement. Band gap of the undoped and Sn4+ doped ZnO were analyzed by Tauc plot and it was observed that the band gap of the materials had slightly decreased from 3.2 to 3.16 eV and again increased to 3.23 eV with respect to the increase in the doping concentration from 1 to 30%. A significant change was also noticed in the photoluminescence emission properties of ZnO i.e. increase in the intensity of NBE emission and decrease in DLE, on subject to Sn4+ doping. Average PL lifetime had increased from 29.45 ns for ZnO to 30.62 ns upon 1% Sn ion doping in ZnO. Electrical properties studied by solid state impedance spectroscopy showed that the conductivity had increased by one order of magnitude (from 7.48×10-8 to 2.21×10-7 S/cm) on Sn4+ doping. Photocatalytic experiments were performed on methyl orange (MO) as a model industrial dye under UV light irradiation for different irradiation times. The optimum Sn4+ content in order to achieve highest photocatalytic activity was found to be 1% Sn 4+ doping. The enhancement was achieved due to a decrease in the band gap favoring the generation of electron-hole pairs and the enhanced PL life time that delays the recombination of these charge carrier formation. The third reason was that the increased electrical conductivity that indicated the faster charge transfer in this material to enhance the photocatalytic activity. The Sn

In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

PubMed Central

Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

2016-01-01

Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm−1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls. PMID:27071382

Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy

DOE PAGES

Radousky, Harry; Qian, Fang; An, Yonghao; ...

2017-02-19

In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less

Harvesting Mechanical and Thermal Energy by Combining ZnO Nanowires and NiTi Shape Memory Alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radousky, Harry; Qian, Fang; An, Yonghao

In the expanding world of small scale energy harvesting, the ability to combine thermal and mechanical harvesting is growing ever more important. Here, we demonstrate the feasibility of using ZnO nanowires to harvest both mechanical and low-quality thermal energy in simple, scalable devices. These devices were fabricated on kapton films and used ZnO nanowires with the same growth direction to assure alignment of the piezoelectric potentials of all of the wires. Mechanical harvesting from these devices was demonstrated using a periodic application of force, modeling the motion of the human body. Tapping the device from the top of the devicemore » with a wood stick, for example yielded an Open Circuit Voltage (OCV) of 0.2 - 4 V, which is in an ideal range for device applications. In order to demonstrate thermal harvesting from low quality heat sources, a commercially available Nitinol (Ni-Ti alloy) foil was attached to the nanowire piezoelectric device to create a compound thermoelectric. When bent at room temperature and then heated to 50°C, the Nitinol foil was restored to its original flat shape, which yielded an output voltage of nearly 1 V from the ZnO nanowire device.« less

Study of ZnO and Mg doped ZnO nanoparticles by sol-gel process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ansari, Mohd Meenhaz, E-mail: meenhazphysics@gmail.com; Arshad, Mohd; Tripathi, Pushpendra

Nano-crystalline undoped and Mg doped ZnO (Mg-ZnO) nanoparticles with compositional formula Mg{sub x}Zn{sub 1-x}O (x=0,1,3,5,7,10 and 12 %) were synthesized using sol-gel process. The XRD diffraction peaks match with the pattern of the standard hexagonal structure of ZnO that reveals the formation of hexagonal wurtzite structure in all samples. SEM images demonstrates clearly the formation of spherical ZnO nanoparticles, and change of the morphology of the nanoparticles with the concentration of the magnesium, which is in close agreement with that estimated by Scherer formula based on the XRD pattern. To investigate the doping effect on optical properties, the UV–VIS absorptionmore » spectra was obtained and the band gap of the samples calculated.« less

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Improving the selective cancer killing ability of ZnO nanoparticles using Fe doping.

PubMed

Thurber, Aaron; Wingett, Denise G; Rasmussen, John W; Layne, Janet; Johnson, Lydia; Tenne, Dmitri A; Zhang, Jianhui; Hanna, Charles B; Punnoose, Alex

2012-06-01

This work reports a new method to improve our recent demonstration of zinc oxide (ZnO) nanoparticles (NPs) selectively killing certain human cancer cells, achieved by incorporating Fe ions into the NPs. Thoroughly characterized cationic ZnO NPs (∼6 nm) doped with Fe ions (Zn(1-x )Fe (x) O, x = 0-0.15) were used in this work, applied at a concentration of 24 μg/ml. Cytotoxicity studies using flow cytometry on Jurkat leukemic cancer cells show cell viability drops from about 43% for undoped ZnO NPs to 15% for ZnO NPs doped with 7.5% Fe. However, the trend reverses and cell viability increases with higher Fe concentrations. The non-immortalized human T cells are markedly more resistant to Fe-doped ZnO NPs than cancerous T cells, confirming that Fe-doped samples still maintain selective toxicity to cancer cells. Pure iron oxide samples displayed no appreciable toxicity. Reactive oxygen species generated with NP introduction to cells increased with increasing Fe up to 7.5% and decreased for >7.5% doping.

Impedance analysis of PbS colloidal quantum dot solar cells with different ZnO nanowire lengths

NASA Astrophysics Data System (ADS)

Fukuda, Takeshi; Takahashi, Akihiro; Wang, Haibin; Takahira, Kazuya; Kubo, Takaya; Segawa, Hiroshi

2018-03-01

The photoconversion efficiency of colloidal quantum dot (QD) solar cells has been markedly improved by optimizing the surface passivation and device structure, and details of device physics are now under investigation. In this study, we investigated the resistance and capacitance components at the ZnO/PbS-QD interface and inside a PbS-QD layer by measuring the impedance spectrum while the interface area was controlled by changing the ZnO nanowire length. By evaluating the dependence of optical intensity and DC bias voltage on the ZnO nanowire length, only the capacitance was observed to be influenced by the interface area, and this indicates that photoinduced carriers are generated at the surface of PbS-QD. In addition, since the capacitance is proportional to the surface area of the QD, the interface area can be evaluated from the capacitance. Finally, photovoltaic performance was observed to increase with increasing ZnO nanowire length owing to the large interface area, and this result is in good agreement with the capacitance measurement.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

NASA Astrophysics Data System (ADS)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Growth of ZnO nanowires on polypropylene membrane surface-Characterization and reactivity

NASA Astrophysics Data System (ADS)

Bojarska, Marta; Nowak, Bartosz; Skowroński, Jarosław; Piątkiewicz, Wojciech; Gradoń, Leon

2017-01-01

Need for a new membrane is clearly visible in recent studies, mostly due to the fouling phenomenon. Authors, focused on problem of biofouling caused by microorganisms that are present in water environment. An attempt to form a new membrane with zinc oxide (ZnO) nanowires was made; where plasma treatment was used as a first step of modification followed by chemical bath deposition. Such membrane will exhibit additional reactive properties. ZnO, because of its antibacterial and photocatalytic properties, is more and more often used in commercial applications. The authors used SEM imaging, measurement of the contact angle, XRD and the FT-IR analysis for membrane characterization. Amount of ZnO deposited on membrane surface was also investigated by dithizone method. Photocatalytic properties of such membranes were examined through methylene blue and humic acid degradation in laboratory scale modules with LEDs as either: wide range white or UV light source. Antibacterial and antifouling properties of polypropylene membranes modified with ZnO nanowires were examined through a series of tests involving microorganisms: model gram-positive and -negative bacteria. The obtained results showed that it is possible to modify the membrane surface in such a way, that additional reactive properties will be given. Thus, not only did the membrane become a physical barrier, but also turned out to be a reactive one.

Effect of K-doping on structural and optical properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Xu, Linhua; Li, Xiangyin; Yuan, Jun

2008-09-01

In this work, K-doped ZnO thin films were prepared by a sol-gel method on Si(111) and glass substrates. The effect of different K-doping concentrations on structural and optical properties of the ZnO thin films was studied. The results showed that the 1 at.% K-doped ZnO thin film had the best crystallization quality and the strongest ultraviolet emission ability. When the concentration of K was above 1 at.%, the crystallization quality and ultraviolet emission ability dropped. For the K-doped ZnO thin films, there was not only ultraviolet emission, but also a blue emission signal in their photoluminescent spectra. The blue emission might be connected with K impurity or/and the intrinsic defects (Zn interstitial and Zn vacancy) of the ZnO thin films.

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

PubMed

Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

2016-07-13

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

Modulation-Doped In2 O3 /ZnO Heterojunction Transistors Processed from Solution.

PubMed

Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D

2017-05-01

This paper reports the controlled growth of atomically sharp In 2 O 3 /ZnO and In 2 O 3 /Li-doped ZnO (In 2 O 3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In 2 O 3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In 2 O 3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In 2 O 3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In 2 O 3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation and antibacterial properties of titanium-doped ZnO from different zinc salts

PubMed Central

2014-01-01

To research the relationship of micro-structures and antibacterial properties of the titanium-doped ZnO powders and probe their antibacterial mechanism, titanium-doped ZnO powders with different shapes and sizes were prepared from different zinc salts by alcohothermal method. The ZnO powders were characterized by X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected area electron diffraction (SAED), and the antibacterial activities of titanium-doped ZnO powders on Escherichia coli and Staphylococcus aureus were evaluated. Furthermore, the tested strains were characterized by SEM, and the electrical conductance variation trend of the bacterial suspension was characterized. The results indicate that the morphologies of the powders are different due to preparation from different zinc salts. The XRD results manifest that the samples synthesized from zinc acetate, zinc nitrate, and zinc chloride are zincite ZnO, and the sample synthesized from zinc sulfate is the mixture of ZnO, ZnTiO3, and ZnSO4 · 3Zn (OH)2 crystal. UV-vis spectra show that the absorption edges of the titanium-doped ZnO powders are red shifted to more than 400 nm which are prepared from zinc acetate, zinc nitrate, and zinc chloride. The antibacterial activity of titanium-doped ZnO powders synthesized from zinc chloride is optimal, and its minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) are lower than 0.25 g L−1. Likewise, when the bacteria are treated by ZnO powders synthesized from zinc chloride, the bacterial cells are damaged most seriously, and the electrical conductance increment of bacterial suspension is slightly high. It can be inferred that the antibacterial properties of the titanium-doped ZnO powders are relevant to the microstructure, particle size, and the crystal. The powders can damage the

Effects of Eu doping and O vacancy on the magnetic and optical properties of ZnO

NASA Astrophysics Data System (ADS)

Ling-Feng, Qu; Qing-Yu, Hou; Xiao-Fang, Jia; Zhen-Chao, Xu; Chun-Wang, Zhao

2018-02-01

We calculated the electronic structure and optical properties of Eu mono-doped ZnO systems with or without O vacancy. We also determined the relative energy of ferromagnetic and antiferromagnetic orders of Eu-double-doped ZnO systems. The double-doped systems possess high Curie temperature and achieve room temperature ferromagnetism. The magnetism in the Eu mono-doped system without O vacancy is caused by the -Eu3+-O2--Eu3+- bound magnetopolaron (BMP) model. The magnetism of Eu mono-doped ZnO systems with O vacancy is more stable than that without O vacancy, and such magnetism is attributed to the -Eu3+-VO++-Eu3+- BMP model. The absorption spectrum for mono-doped systems is red shifted, and this finding confirms that Eu-mono-doped ZnO is a candidate photocatalyst for various applications. Therefore, Eu-double-doped ZnO can be practically used as an unambiguous diluted magnetic semiconductor.

Co-Doped ZnO nanoparticles: minireview.

PubMed

Djerdj, Igor; Jaglicić, Zvonko; Arcon, Denis; Niederberger, Markus

2010-07-01

Diluted magnetic semiconductors with a Curie temperature exceeding 300 K are promising candidates for spintronic devices and spin-based electronic technologies. We review recent achievements in the field of one of them: Co-doped ZnO at the nanoparticulate scale.

Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S.

We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemicalmore » experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.« less

Synthesis and characterization of Ni doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Tamgadge, Y. S.; Gedam, P. P.; Ganorkar, R. P.; Mahure, M. A.; Pahurkar, V. G.; Muley, G. G.

2018-05-01

In this paper, we present synthesis of L-valine assisted surface modification of Ni doped ZnO nanoparticles (NPs) using chemical precipitation method. Samples were calcined at 500oC for 2h. Uncalcined and calcined samples were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM) and ultraviolet-visible (UV-vis) spectroscopy. Ni doped ZnO NPs with average particle size of 8 nm have been successfully obtained using L-valine as surface modifying agent. Increase in the particle size was observed after the calcination. XRD and TEM studies confirmed the purity, surface morphology and hexagonal wurtzite crystal structure of ZnO NPs. UV-vis spectroscopy indicated the blue shift of excitons absorption wavelength and surface modification by L-valine.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

PubMed

Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T; Martinez, Julio A

2016-01-08

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Spectroscopic and fiber optic ethanol sensing properties Gd doped ZnO nanoparticles.

PubMed

Noel, J L; Udayabhaskar, R; Renganathan, B; Muthu Mariappan, S; Sastikumar, D; Karthikeyan, B

2014-11-11

We report the structural, optical and gas sensing properties of prepared pure and Gd doped ZnO nanoparticles through solgel method at moderate temperature. Structural studies are carried out by X-ray diffraction method confirms hexagonal wurtzite structure and doping induced changes in lattice parameters is observed. Optical absorption spectral studies shows red shift in the absorption peak corresponds to band-gap from 3.42 eV to 3.05 eV and broad absorption in the visible range after Gd doping is observed. Scanning electron microscopic studies shows increase in particle size where the particle diameters increase from few nm to micrometers after Gd doping. The clad modified ethanol fiber-optic sensor studies for ethanol sensing exhibits best sensitivity for the 3% Gd doped ZnO nanoparticles and the sensitivity get lowered incase of higher percentage of Gd doped ZnO sample. Copyright © 2014 Elsevier B.V. All rights reserved.

Electrical properties of Mg doped ZnO nanostructure annealed at different temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, R., E-mail: ruziana12@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Rusop, M., E-mail: nanouitm@gmail.com

In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250°C to 500°C was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnOmore » thin have highest crystalinnity at 500°C annealing temperature. The electrical properties were investigating by using Current-Voltage (I-V) measurement. I-V measurement showed the electrical properties were varied at different annealing temperature. The annealing temperature at 500°C has the highest electrical conductance properties.« less

Synthesis of highly efficient antibacterial agent Ag doped ZnO nanorods: Structural, Raman and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jan, Tariq; Iqbal, Javed, E-mail: javed.saggu@iiu.edu.pk; Ismail, Muhammad

Here, synthesis, structural, morphological, Raman, optical properties and antibacterial activity of undoped and Ag doped ZnO nanorods by chemical co-precipitation technique have been reported. Structural analysis has revealed that Ag doping cannot deteriorate the structure of ZnO and wurtzite phase is maintained. Lattice constants are found to be decreased with the Ag doping. Fourier transform infrared and Raman spectroscopy also confirm the X-ray diffraction results. Scanning electron microscopy results have demonstrated the formation of ZnO nanorods with average diameter and length of 96 nm and 700 nm, respectively. Raman spectroscopy results suggest that the Ag doping enhances the number of defects inmore » ZnO crystal. It has been found from optical study that Ag doping results in positional shift of band edge absorption peak. This is attributed to the successful incorporation of Ag dopant into ZnO host matrix. The antibacterial activity of prepared nanorods has been determined by two different methods and compared to that of undoped ZnO nanorods. Ag doped ZnO nanorods exhibit excellent antibacterial activity as compared to that of undoped ZnO nanorods. This excellent antibacterial activity may be attributed to the presence of oxygen vacancies and Zn{sup 2+} interstitial defects. Our preliminary findings suggest that Ag doped ZnO nanorods can be used externally to control the spreading of infections related with tested bacterial strains.« less

The effect of doping on low temperature growth of high quality GaAs nanowires on polycrystalline films

PubMed Central

DeJarld, Matt; Teran, Alan; Luengo-Kovac, Marta; Yan, Lifan; Moon, Eun Seong; Beck, Sara; Guillen, Cristina; Sih, Vanessa; Phillips, Jamie; Milunchick, Joanna Mirecki

2016-01-01

The increasing demand for miniature autonomous sensors requires low cost integration methods, but to date, material limitations have prevented the direct growth of optically active III-V materials on CMOS devices. We report on the deposition of GaAs nanowires on polycrystalline conductive films to allow for direct integration of optoelectronic devices on dissimilar materials. Undoped, Si-doped, and Be-doped nanowires were grown at Ts=400°C on oxide (indium tin oxide) and metallic (platinum and titanium) films. Be-doping is shown to significantly reduce the nanowire diameter and improve the nanowire aspect ratio to 50:1. Photoluminescence measurements of Be-doped nanowires are 1–2 orders of magnitude stronger than undoped and Si-doped nanowires and have a thermal activation energy of 14meV, which is comparable to nanowires grown on crystalline substrates. Electrical measurements confirm that the metal-semiconductor junction is Ohmic. These results demonstrate the feasibility of integrating nanowire-based optoelectronic devices directly on CMOS chips. PMID:27834310

Study of cobalt effect on structural and optical properties of Dy doped ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Pandey, Praveen C.

2018-05-01

The present study has been carried out to investigate the effect of Co doping on structural and optical properties of Dy doped ZnO nanoparticles. We have prepared pure Zinc oxide, Dy (1%) doped ZnO and Dy (1%) doped ZnO co-doped with Co(2%) with the help of simple sol-gel combustion method. The structural analysis carried out using X-ray diffraction spectra (XRD) indicates substitution of Dy and Co at Zn site of ZnO crystal structure and hexagonal crystal structure without any secondary phase formation in all the samples. The surface morphology was analyzed by transmission electron microscopy (TEM). Absorption study indicates that Dy doping causes a small shift in band edge, while Co co-doping results significant change is absorption edge as well as introduce defect level absorption in the visible region. The band gap of samples decreases due to Dy and Co doping, which can be attributed to defect level formation below the conduction band in the system.

Thermal process induced change of conductivity in As-doped ZnO

NASA Astrophysics Data System (ADS)

Su, S. C.; Fan, J. C.; Ling, C. C.

2012-02-01

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

DOE PAGES

Shen, Youde; Chen, Renjie; Yu, Xuechao; ...

2016-06-02

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed tomore » impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.« less

Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (1 1 1) oriented Si, GaAs and InP substrates by electrochemical deposition method

NASA Astrophysics Data System (ADS)

Pham, Huyen T.; Nguyen, Tam D.; Tran, Dat Q.; Akabori, Masashi

2017-05-01

ZnO semiconductors, especially in form of nanomaterials, possess many excellent properties and have been employed in many applications. In this article, we reported the selective area growth of ZnO nanowires on different (1 1 1) oriented Si, GaAs, and first time on InP substrates by electrochemical deposition method without any seed layers, using zinc nitrate hexahydrate precursor in the presence of hexamethylenetetramine. The position, density and orientation of such ZnO nanowires were controlled by the substrate patterning technique using electron-beam lithography. As-synthesized ZnO nanowires grown on patterned substrates show smaller diameter, higher density and better orientation, compared to the one grown on unpatterned substrates. In particular, the ZnO nanowires grown on GaAs patterned substrate indicate the best morphological property, with the average diameter, length and density of about 100 nm, 2.4 µm and 35 µm-2, respectively. The x-ray diffraction and Raman scattering also demonstrate high crystalline quality of our ZnO nanowires. Moreover, as-reported ZnO nanowires are also conductive, which would allow their use in field-effect transistor and other potential nanoscale device applications.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

PubMed

Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

2013-11-21

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

PubMed

Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

2014-02-07

High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

Photoelectrochemical properties of highly mobilized Li-doped ZnO thin films.

PubMed

Shinde, S S; Bhosale, C H; Rajpure, K Y

2013-03-05

Li-doped ZnO thin films with preferred (002) orientation have been prepared by spray pyrolysis technique in aqueous medium on to the corning glass substrates. The effect of Li-doping on to the photoelectrochemical, structural, morphological, optical, luminescence, electrical and thermal properties has been investigated. XRD and Raman study indicates that the films have hexagonal crystal structure. The transmittance, reflectance, refractive index, extinction coefficient and bandgap have been analyzed by optical study. PL spectra consist of a near band edge and visible emission due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial zinc (Zni), interstitial oxygen (Oi) and zinc vacancy (VZn). The Li-doped ZnO films prepared for 1at% doping possesses the highest electron mobility of 102cm(2)/Vs and carrier concentration of 3.62×10(19)cm(-3). Finally, degradation of 2,4,6-Trinitrotoluene using Li-doped ZnO thin films has been reported. Copyright © 2013 Elsevier B.V. All rights reserved.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

PubMed

Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

2016-12-01

Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

Influence Al doped ZnO nanostructure on structural and optical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramelan, Ari Handono, E-mail: aramelan@mipa.uns.ac.id; Wahyuningsih, Sayekti; Chasanah, Uswatul

2016-04-19

The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO causemore » of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.« less

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

NASA Astrophysics Data System (ADS)

Zhao, S.; Mi, Z.; Kibria, M. G.; Li, Q.; Wang, G. T.

2012-06-01

In the present work, the photoluminescence (PL) characteristics of intrinsic and Si-doped InN nanowires are studied in detail. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ˜0.64 eV (at 300 K) and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density and the absence or a negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ˜0.65 and ˜0.73-0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and high-energy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopant surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, are confirmed by angle-resolved x-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence or a negligible level of surface electron accumulation in intrinsic InN nanowires. This work elucidates the role of charge-carrier concentration and distribution on the optical properties of InN nanowires.

Tailoring surface and photocatalytic properties of ZnO and nitrogen-doped ZnO nanostructures using microwave-assisted facile hydrothermal synthesis

NASA Astrophysics Data System (ADS)

Rangel, R.; Cedeño, V.; Ramos-Corona, A.; Gutiérrez, R.; Alvarado-Gil, J. J.; Ares, O.; Bartolo-Pérez, P.; Quintana, P.

2017-08-01

Microwave hydrothermal synthesis, using an experimental 23 factorial design, was used to produce tunable ZnO nano- and microstructures, and their potential as photocatalysts was explored. Photocatalytic reactions were conducted in a microreactor batch system under UV and visible light irradiation, while monitoring methylene blue degradation, as a model system. The variables considered in the microwave reactor to produce ZnO nano- or microstructures, were time, NaOH concentration and synthesis temperature. It was found that, specific surface area and volume/surface area ratio were affected as a consequence of the synthesis conditions. In the second stage, the samples were plasma treated in a nitrogen atmosphere, with the purpose of introducing nitrogen into the ZnO crystalline structure. The central idea is to induce changes in the material structure as well as in its optical absorption, to make the plasma-treated material useful as photocatalyst in the visible region of the electromagnetic spectrum. Pristine ZnO and nitrogen-doped ZnO compounds were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), specific surface area (BET), XPS, and UV-Vis diffuse reflectance spectroscopy. The results show that the methodology presented in this work is effective in tailoring the specific surface area of the ZnO compounds and incorporation of nitrogen into their structure, factors which in turn, affect its photocatalytic behavior.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Erdong; Li, Qiming; Swartzentruber, Brian

2015-11-25

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

A facile green antisolvent approach to Cu2+-doped ZnO nanocrystals with visible-light-responsive photoactivities.

PubMed

Lu, Yi-Hsuan; Lin, Wei-Hao; Yang, Chao-Yao; Chiu, Yi-Hsuan; Pu, Ying-Chih; Lee, Min-Han; Tseng, Yuan-Chieh; Hsu, Yung-Jung

2014-08-07

An environmentally benign antisolvent method has been developed to prepare Cu(2+)-doped ZnO nanocrystals with controllable dopant concentrations. A room temperature ionic liquid, known as a deep eutectic solvent (DES), was used as the solvent to dissolve ZnO powders. Upon the introduction of the ZnO-containing DES into a bad solvent which shows no solvation to ZnO, ZnO was precipitated and grown due to the dramatic decrease of solubility. By adding Cu(2+) ions to the bad solvent, the growth of ZnO from the antisolvent process was accompanied by Cu(2+) introduction, resulting in the formation of Cu(2+)-doped ZnO nanocrystals. The as-prepared Cu(2+)-doped ZnO showed an additional absorption band in the visible range (400-800 nm), which conduced to an improvement in the overall photon harvesting efficiency. Time-resolved photoluminescence spectra, together with the photovoltage information, suggested that the doped Cu(2+) may otherwise trap photoexcited electrons during the charge transfer process, inevitably depressing the photoconversion efficiency. The photoactivity of Cu(2+)-doped ZnO nanocrystals for photoelectrochemical water oxidation was effectively enhanced in the visible region, which achieved the highest at 2.0 at% of Cu(2+). A further increase in the Cu(2+) concentration however led to a decrease in the photocatalytic performance, which was ascribed to the significant carrier trapping caused by the increased states given by excessive Cu(2+). The photocurrent action spectra illustrated that the enhanced photoactivity of the Cu(2+)-doped ZnO nanocrystals was mainly due to the improved visible photon harvesting achieved by Cu(2+) doping. These results may facilitate the use of transition metal ion-doped ZnO in other photoconversion applications, such as ZnO based dye-sensitized solar cells and magnetism-assisted photocatalytic systems.

A vanadium-doped ZnO nanosheets-polymer composite for flexible piezoelectric nanogenerators.

PubMed

Shin, Sung-Ho; Kwon, Yang Hyeog; Lee, Min Hyung; Jung, Joo-Yun; Seol, Jae Hun; Nah, Junghyo

2016-01-21

We report high performance flexible piezoelectric nanogenerators (PENGs) by employing vanadium (V)-doped ZnO nanosheets (NSs) and the polydimethylsiloxane (PDMS) composite structure. The V-doped ZnO NSs were synthesized to overcome the inherently low piezoelectric properties of intrinsic ZnO. Ferroelectric phase transition induced in the V-doped ZnO NSs contributed to significantly improve the performance of the PENGs after the poling process. Consequently, the PENGs exhibited high output voltage and current up to ∼32 V and ∼6.2 μA, respectively, under the applied strain, which are sufficient to directly turn on a number of light emitting diodes (LEDs). The composite approach for PENG fabrication is scalable, robust, and reproducible during periodic bending/releasing over extended cycles. The approach introduced here extends the performance limits of ZnO-based PENGs and demonstrates their potential as energy harvesting devices.

Effect of Ga doping and point defect on magnetism of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Qu, Lingfeng

2017-02-01

The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

Defect mediated magnetic interaction and high Tc ferromagnetism in Co doped ZnO nanoparticles.

PubMed

Pal, Bappaditya; Giri, P K

2011-10-01

Structural, optical and magnetic studies have been carried out for the Co-doped ZnO nanoparticles (NPs). ZnO NPs are doped with 3% and 5% Co using ball milling and ferromagnetism (FM) is studied at room temperature and above. A high Curie temperature (Tc) has been observed from the Co doped ZnO NPs. X-ray diffraction and high resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption and photoluminescence studies on the doped samples show change in band structure and oxygen vacancy defects, respectively. Micro-Raman studies of doped samples shows defect related additional strong bands at 547 and 574 cm(-1) confirming the presence of oxygen vacancy defects in ZnO lattice. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear M-H loop with saturation magnetization and coercive field of the order of 4-6 emu/g and 260 G, respectively. Temperature dependence of magnetization measurement shows sharp ferromagnetic to paramagnetic transition with a high Tc = 791 K for 3% Co doped ZnO NPs. Ferromagnetic ordering is interpreted in terms of overlapping of polarons mediated through oxygen vacancy defects based on the bound magnetic polaron (BMP) model. We show that the observed FM data fits well with the BMP model involving localised carriers and magnetic cations.

Synthesis and characterization of rod like C doped ZnO nanoparticles with enhanced photocatalytic activities

NASA Astrophysics Data System (ADS)

Labhane, P. K.; Sapkal, B. M.; Sonawane, G. H.

2018-05-01

Carbon (C) doped ZnO rod like nanoparticles were prepared by simple co-precipitation method. The effect of C doping on ZnO has been evaluated by using XRD, Williamson-Hall Plot, FESEM and EDX data. UV light assisted photocatalytic activities of prepared samples were evaluated spectrophotometrically by the degradation of methylene blue (MB). C doped ZnO shows excellent catalytic efficiency compared to pure ZnO, degrading MB completely within 100 min under UV light. Photocatalysis follows the first order kinetics law and the calculated apparent reaction kinetics rate constant suggest the better activity of C-ZnO.

Study on silver doped and undoped ZnO thin films working as capacitive sensor

NASA Astrophysics Data System (ADS)

Kiran, S.; Kumar, N. Santhosh; Kumar, S. K. Naveen

2013-06-01

Nanomaterials have been found to exhibit interesting properties like good conductivity, piezoelectricity, high band gap etc. among those metal oxide family, Zinc Oxide has become a material of interest among scientific community. In this paper, we present a method of fabricating capacitive sensors, in which Silver doped ZnO and pure ZnO nanoparticles act as active layer. For the synthesis of the nanoparticle, we followed biosynthesis method and wet chemical method for Ag and Ag doped ZnO nanoparticles respectively. Characterization has been done for both the particles. The XRD pattern taken for the Ag Doped ZnO nanoparticles confirmed the average size of the particles to be 15nm. AFM image of the sample is taken by doping on Silicon wafer. Also we have presented the results of CV characteristics and IV characteristics of the capacitive sensor.

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Eradication of Multi-drug Resistant Bacteria by Ni Doped ZnO Nanorods: Structural, Raman and optical characteristics

NASA Astrophysics Data System (ADS)

Jan, Tariq; Iqbal, Javed; Ismail, Muhammad; Mansoor, Qaisar; Mahmood, Arshad; Ahmad, Amaar

2014-07-01

In this paper, ZnO nanorods doped with varying amounts of Ni have been prepared by chemical co-precipitation technique. Structural investigations provide the evidence that Ni is successfully doped into ZnO host matrix without having any secondary phases. Scanning electron microscopy (SEM) images reveal the formation of rodlike structure of undoped ZnO with average length and diameter of 1 μm and 80 nm, respectively. Raman spectroscopy results show that the E1LO phonons mode band shifts to the higher values with Ni doping, which is attributed to large amount of crystal defects. Ni doping is also found to greatly influence the optical properties of ZnO nanorods. The influence of Ni doping on antibacterial characteristics of ZnO nanorods have been studied by measuring the growth curves of Escherichia coli (E. coli), Methicillin-resistant Staphylococcus aureus (S. aureus) and Pseudomonas aeruginosa (P. aeruginosa) bacteria in the presence of prepared nanorods. ZnO nanorods antibacterial potency is found to increase remarkably with Ni doping against S. aureus and P. aeruginosa microbials, which might possibly be due to the increase in reactive oxygen species (ROS) generation. Interestingly, it is observed that Ni doped ZnO nanorods completely eradicates these multi-drug resistant bacteria.

The kinetic friction of ZnO nanowires on amorphous SiO2 and SiN substrates

NASA Astrophysics Data System (ADS)

Roy, Aditi; Xie, Hongtao; Wang, Shiliang; Huang, Han

2016-12-01

ZnO nanowires were bent on amorphous SiO2 and SiN substrates in an ambient atmosphere using optical nanomanipulation. The kinetic friction between the nanowires and substrate was determined from the bent shape of the nanowires. The kinetic friction force per unit area, i.e. frictional shear stress, for the ZnO/SiO2 and ZnO/SiN nanowire/substrate systems being measured were 1.05 ± 0.28 and 2.08 ± 0.33 MPa, respectively. The surface roughness and the Hamaker constant of SiO2 and SiN substrates had significant effect on the frictional stresses.

The structural, electronic and optical properties of Nd doped ZnO using first-principles calculations

NASA Astrophysics Data System (ADS)

Wen, Jun-Qing; Zhang, Jian-Min; Chen, Guo-Xiang; Wu, Hua; Yang, Xu

2018-04-01

The density functional theory calculations using general gradient approximation (GGA) applying Perdew-Burke-Ernzerhof (PBE) as correlation functional have been systematically performed to research the formation energy, the electronic structures, band structures, total and partial DOS, and optical properties of Nd doping ZnO with the content from 6.25% to 12.5%. The formation energies are negative for both models, which show that two structures are energetically stable. Nd doping ZnO crystal is found to be a direct band gap semiconductor and Fermi level shifts upward into conduction band, which show the properties of n-type semiconductor. Band structures are more compact after Nd doping ZnO, implying that Nd doping induces the strong interaction between different atoms. Nd doping ZnO crystal presents occupied states at near Fermi level, which mainly comes from the Nd 4f orbital. The calculated optical properties imply that Nd doping causes a red-shift of absorption peaks, and enhances the absorption of the visible light.

Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dong-Ho; Hong, Seong-Taek; Oh, Aely

Highlights: • We have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. • ZnO doping improved the electrical parameters of MoS{sub 2} transistor (I{sub on}↑, μ{sub FE}↑, n↑). • The reduction of ZnO doping effect (ΔV{sub TH}: ∼75% ↓) was observed in air. • The highest photoresponsivity of ZnO-doped MoS{sub 2} photodetector was 3.18 × 10{sup 3} A/W. • The highest detectivity of ZnO-doped MoS{sub 2} photodetector was 5.94 × 10{sup 12} Jones. - Abstract: In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. The ZnO doping effects were systematically investigated bymore » Raman spectroscopy and electrical/optical measurements (I{sub D}–V{sub G} with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS{sub 2}-based electronics (I{sub on}↑, μ{sub FE}↑, n↑) owing to reduction of the effective barrier height between the source and the MoS{sub 2} channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV{sub TH} of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS{sub 2} photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 10{sup 3} A/W) and detectivity (5.94 × 10{sup 12} Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.« less

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-07-01

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

Adsorbed Molecules and Surface Treatment Effect on Optical Properties of ZnO Nanowires Grown by MOCVD

NASA Astrophysics Data System (ADS)

Jabri, S.; Souissi, H.; Sallet, V.; Lusson, A.; Meftah, A.; Galtier, P.; Oueslati, M.

2017-07-01

We have investigated the optical properties of ZnO nanowires grown by metalorganic chemical vapor deposition (MOCVD) with nitrous oxide (N2O) as oxygen precursor. Photoluminescence (PL) and Raman measurements showed the influence of adsorbed molecules on the optical properties. Low-temperature (4 K) PL studies on the surface exciton (SX) at 3.3660 eV elucidated the nature and origin of this emission. In particular, surface treatment by annealing at high temperature under inert gas reduced the emission intensity of SX. Raman vibrational spectra proved that presence of a considerable amount of adsorbed molecules on the surface of ZnO nanowires plays a key role in the occurrence of surface excitons.

Role of Ni doping on transport properties of ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dar, Tanveer Ahmad, E-mail: tanveerphysics@gmail.com; Agrawal, Arpana; Sen, Pratima

2015-06-24

Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO resultsmore » in decrease in magnitude of negative MR.« less

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

NASA Astrophysics Data System (ADS)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Structural studies and band gap tuning of Cr doped ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srinet, Gunjan, E-mail: gunjansrinet@gmail.com; Kumar, Ravindra, E-mail: gunjansrinet@gmail.com; Sajal, Vivek, E-mail: gunjansrinet@gmail.com

2014-04-24

Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

Efficiency of Nb-Doped ZnO Nanoparticles Electrode for Dye-Sensitized Solar Cells Application

NASA Astrophysics Data System (ADS)

Anuntahirunrat, Jirapat; Sung, Youl-Moon; Pooyodying, Pattarapon

2017-09-01

The technological of Dye-sensitized solar cells (DSSCs) had been improved for several years. Due to its simplicity and low cost materials with belonging to the part of thin films solar cells. DSSCs have numerous advantages and benefits among the other types of solar cells. Many of the DSSC devices had use organic chemical that produce by specific method to use as thin film electrodes. The organic chemical that widely use to establish thin film electrodes are Zinc Oxide (ZnO), Titanium Dioxide (TiO2) and many other chemical substances. Zinc oxide (ZnO) nanoparticles had been used in DSSCs applications as thin film electrodes. Nanoparticles are a part of nanomaterials that are defined as a single particles 1-100 nm in diameter. From a few year ZnO widely used in DSSC applications because of its optical, electrical and many others properties. In particular, the unique properties and utility of ZnO structure. However the efficiency of ZnO nanoparticles based solar cells can be improved by doped various foreign impurity to change the structures and properties. Niobium (Nb) had been use as a dopant of metal oxide thin films. Using specification method to doped the ZnO nanoparticles thin film can improved the efficiencies of DSSCs. The efficiencies of Nb-doped ZnO can be compared by doping 0 at wt% to 5 at wt% in ZnO nanoparticles thin films that prepared by the spin coating method. The thin film electrodes doped with 3 at wt% represent a maximum efficiencies with the lowest resistivity of 8.95×10-4 Ω·cm.

Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

NASA Astrophysics Data System (ADS)

Huang, B.

2016-07-01

We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

Polarization induced conductive AFM on cobalt doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Sahoo, Pradosh Kumar; Mangamma, G.; Rajesh, A.; Kamruddin, M.; Dash, S.

2017-05-01

In the present work cobalt doped ZnO (CZO) nanostructures (NS) have been synthesized by of sol-gel and spin coating process. After the crystal phase confirmation by GIXRD and Raman spectroscopy, Conductive Atomic Force Microscopy (C-AFM) measurement was performed on CZO NS which shows the random distribution of electrically conducting zones on the surface of the material exhibiting current in the range 4-170 pA. We provide the possible mechanisms for variation in current distribution essential for quantitative understanding of transport properties of ZnO NS in doped and undoped forms.

Defect studies of ZnO single crystals electrochemically doped with hydrogen

NASA Astrophysics Data System (ADS)

Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.

2008-03-01

Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

NASA Astrophysics Data System (ADS)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Origin of magnetic properties in carbon implanted ZnO nanowires.

PubMed

Wang, Y F; Shao, Y C; Hsieh, S H; Chang, Y K; Yeh, P H; Hsueh, H C; Chiou, J W; Wang, H T; Ray, S C; Tsai, H M; Pao, C W; Chen, C H; Lin, H J; Lee, J F; Wu, C T; Wu, J J; Chang, Y M; Asokan, K; Chae, K H; Ohigashi, T; Takagi, Y; Yokoyama, T; Kosugi, N; Pong, W F

2018-05-17

Various synchrotron radiation-based spectroscopic and microscopic techniques are used to elucidate the room-temperature ferromagnetism of carbon-doped ZnO-nanowires (ZnO-C:NW) via a mild C + ion implantation method. The photoluminescence and magnetic hysteresis loops reveal that the implantation of C reduces the number of intrinsic surface defects and increases the saturated magnetization of ZnO-NW. The interstitial implanted C ions constitute the majority of defects in ZnO-C:NW as confirmed by the X-ray absorption spectroscopic studies. The X-ray magnetic circular dichroism spectra of O and C K-edge respectively indicate there is a reduction in the number of unpaired/dangling O 2p bonds in the surface region of ZnO-C:NW and the C 2p-derived states of the implanted C ions strongly affect the net spin polarization in the surface and bulk regions of ZnO-C:NW. Furthermore, these findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of the ZnO-C:NW in the surface region and bulk phase, respectively.

Fabrication and characterization of novel transparent conducting oxide N-CNT doped ZnO for photovoltaic applications

NASA Astrophysics Data System (ADS)

Benyounes, Anas; Abbas, Naseem; Hammi, Maryama; Ziat, Younes; Slassi, Amine; Zahra, Nida

2018-02-01

The present research reports on the electrical and optical properties of N-CNT doped with ZnO, which is considered as wurtzite transparent and conducting oxide semiconductor structure. The thin films of N-doped carbon nanotubes/ZnO were prepared using sol-gel method, then we carried out investigations in optical and electrical point of view to extract their usefulness in photovoltaic applications. For this purpose, ZnO films were doped by several ratios of carbon nanotubes and N-doped carbon nanotubes. The electrical studies were performed over these two kinds of doped ZnO films, the electrical conductivity has found to be more important for ZnO films filled with N-CNTs. This finding is pretty explained by the electronic conduction hold by nitrogen as charge carriers within carbon nanotubes.

Structural, Optical, and Photocatalytic Properties of Quasi-One-Dimensional Nanocrystalline ZnO, ZnOC:nC Composites, and C-doped ZnO

NASA Astrophysics Data System (ADS)

Shalaeva, E. V.; Gyrdasova, O. I.; Krasilnikov, V. N.; Melkozerova, M. A.; Baklanova, I. V.; Buldakova, L. Yu.

Various thermolysis rotes of zinc glicolate complexes are considered for the synthesis of quasi-one-dimensional nanostructured aggregates ZnO and Zn-O-C used as photocatalysts. Structural features of quasi-one-dimensional aggregates Zn-O-C and ZnO are investigated in detail. Transmission electron microscopy, Raman spectroscopy, and electron paramagnetic resonance spectroscopy methods demonstrate that the aggregates Zn-O-C have either composite structure (ZnO crystallites in amorphous carbon matrix) or a C-doped ZnO single-phase structure depending on heat treatment conditions, and that all the aggregates exhibit as a rule a tubular morphology, a nanocrystalline structure with a high specific surface area, and a high concentration of singly charged oxygen vacancies. The mechanism of the nanocrystalline structure formation is discussed and the effect of thermolysis condition on the formation of the textured structure of aggregates is investigated. The results of examination of the photocatalytic and optical absorption properties of the synthesized aggregates are presented. The photocatalytic activity for the hydroquinone oxidation reaction under ultraviolet and visible light increases in the series: the reference ZnO powder, quasi-one-dimensional ZnO, quasi-one-dimensional aggregates C-doped ZnO, and this tendency correlates with the reduction of the optical gap width. As a result of our studies, we have arrived at an important conclusion that thermal treatment of ZnO:nC composites allows a C-doped ZnO with high catalytic activity. This increasing photoactivity of C-doped ZnO aggregates is attributed to the optimal specific surface area and electron-energy spectrum restructuring to be produced owing to the presence of singly charged oxygen vacancies and carbon dissolved in the ZnO lattice.

Effect of Eu3+ doping on the structural, morphological and luminescence properties ZnO nanostructures

NASA Astrophysics Data System (ADS)

Vinoditha, U.; Balakrishna, K. M.; Sarojini, B. K.; Narayana, B.; Kumara, K.

2018-05-01

Pure and Eu3+ ions (1, 3, 5 atomic wt%) doped ZnO nanostructures are synthesized by a surfactant assisted hydrothermal method. The effect of doping concentrations on structural, morphological and optical properties of ZnO nanostructures is studied. The XRD analysis shows good crystallinity and the phase purity of the ZnO nanostructures. A shift in the standard Zn-O stretching mode after Eu3+ doping is observed in the FTIR spectra. The images of FESEM demonstrate the morphological variations from hexagonal nanorods to nanoflowers on varying the dopant concentrations. Substitution of Eu3+ ions into Zn2+ sites is confirmed by EDX analysis. The dominance of particle shape over the UV-Visible absorption properties of the prepared samples is noticed. The photoluminescence (PL) emission of undoped and doped ZnO nanostructures show dominant near band edge emission (NBE) in the UV region and minor defect induced deep level emissions in the visible region.

High temperature ferromagnetism in Ni doped ZnO nanoparticles: Milling time dependence

NASA Astrophysics Data System (ADS)

Pal, Bappaditya; Giri, P. K.; Sarkar, D.

2014-04-01

We report on the room temperature ferromagnetism (RT FM) in the Zn1-xNixO (x = 0, 0.03, and 0.05) nanoparticles (NPs) synthesized by a ball milling technique. X-ray diffraction analysis confirms the single crystalline ZnO wurtzite structure with presence of small intensity secondary phase related peak which disappear with increasing milling time for Ni doped samples. HRTEM lattice images show that the doped NPs are single crystalline with a dspacing of 2.44 Å. Energy-dispersive X-ray spectroscopy analysis confirms the presence of Ni ions in the ZnO matrix. Magnetic measurement (RT) exhibits the hysteresis loop with saturation magnetization (Ms) of 1.6-2.56 (emu/g) and coercive field (Hc) of 296-322 Oe. M-T measurement shows a Curie temperature of the order of 325°C for 3% Ni doped sample. Micro -Raman studies show doping/disorder induced additional modes at ˜510, 547, 572 cm-1 in addition to 437 cm-1 peak of pure ZnO. UV-Vis absorption spectra illustrate band gap shift due to doping. Alteration of Ms value with the variation of doping concentration and milling time has been studied and discussed.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

NASA Astrophysics Data System (ADS)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

The shift of optical band gap in W-doped ZnO with oxygen pressure and doping level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, J.; Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science, Chongqing 400714; Peng, X.Y.

2014-06-01

Highlights: • CVD–PLD co-deposition technique was used. • Better crystalline of the ZnO samples causes the redshift of the optical band gap. • Higher W concentration induces blueshift of the optical band gap. - Abstract: Tungsten-doped (W-doped) zinc oxide (ZnO) nanostructures were synthesized on quartz substrates by pulsed laser and hot filament chemical vapor co-deposition technique under different oxygen pressures and doping levels. We studied in detail the morphological, structural and optical properties of W-doped ZnO by SEM, XPS, Raman scattering, and optical transmission spectra. A close correlation among the oxygen pressure, morphology, W concentrations and the variation of bandmore » gaps were investigated. XPS and Raman measurements show that the sample grown under the oxygen pressure of 2.7 Pa has the maximum tungsten concentration and best crystalline structure, which induces the redshift of the optical band gap. The effect of W concentration on the change of morphology and shift of optical band gap was also studied for the samples grown under the fixed oxygen pressure of 2.7 Pa.« less

2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

NASA Astrophysics Data System (ADS)

Wang, Zhiqiang; Guo, Xiaoxuan; Sham, Tsun-Kong

2014-05-01

Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed. Electronic supplementary information (ESI) available: XEOL spectra with different excitation energies. X-ray attenuation length vs. photon energy. Details of surface defects in ZnO NWs. The second O K-edge and Zn L-edge 2D XANES-XEOL maps. Comparison of the first and second TEY at O K-edge and Zn L-edge scans, respectively. Raman spectra of the ZnO NWs with different IBGE/IDE ratios. See DOI: 10.1039/c4nr01049c

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

In2O3-ZnO heterostructure development in electrical and photoluminescence properties of In2O3 1-D nanostructures

NASA Astrophysics Data System (ADS)

Shariati, M.; Ghafouri, V.

2014-05-01

Indium Oxide quasi one-dimensional (1D) nanostructures known as nanowires and nanorods synthesis using the thermal evaporation method, has been articulated. To nucleate growth sites, substrate seeding promoted 1D nanostructures growth. The catalyst-mediated growth mechanism showed more favorable morphologies and physical properties in under vacuum conditions associated with bottom-up technique. Scanning electron microscopy (SEM) results showed that the Zn-doped 1D nanostructures had spherical caps. The X-ray diffraction (XRD) pattern and energy-dispersive X-ray (EDX) spectrum indicated that these caps intensively associated with ZnO. Therefore, it was reasonable that the vapor-liquid-solid mechanism (VLS) was responsible for the growth of the In2O3-ZnO heterostructure nanowires. This technique enhances optical and electrical properties in nanostructures. The photoluminescence (PL) analysis in Zn-doped In2O3 nanowires and nanorods shows that the intensity of the visible and UV-region emissions overwhelmingly increases and resistance measurement professes the improvement of linear conductance in VLS growth mechanism.

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

NASA Technical Reports Server (NTRS)

Zhu, Shen; Su, Ching-Hua; Lehoczky, Sandor L.; George, M. A.

2000-01-01

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Percentage of different aluminum doping influence the morphological and optical properties of ZnO nanostructured growth for sensor application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohamed, R., E-mail: ruziana12@gmail.com; NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor; Faculty of Applied Sciences, Universiti Teknologi MARA Pahang, 26400 Bandar Tun Razak Jengka, Pahang

In this work, Zinc Oxide (ZnO) with different aluminum (Al) doping percentage was synthesis by sol gel immersion method. Al doped ZnO at various doping percentage from 1, 2, 3, 4 and 5. It was found that with different Al percentage influence the morphological and optical properties of ZnO growth. Field Emission Scanning Electron Microscope (FESEM) image showed the use of different Al doping causes the difference in geometry and size of ZnO nanorods growth. Based on UV-Vis spectroscopy, the transmittance at 1% Al doping has the highest spectrum.

Synthesis, Optical and Photoluminescence Properties of Cu-Doped Zno Nano-Fibers Thin Films: Nonlinear Optics

NASA Astrophysics Data System (ADS)

Ganesh, V.; Salem, G. F.; Yahia, I. S.; Yakuphanoglu, F.

2018-03-01

Different concentrations of copper-doped zinc oxide thin films were coated on a glass substrate by sol-gel/spin-coating technique. The structural properties of pure and Cu-doped ZnO films were characterized by different techniques, i.e., atomic force microscopy (AFM), photoluminescence and UV-Vis-NIR spectroscopy. The AFM study revealed that pure and doped ZnO films are formed as nano-fibers with a granular structure. The photoluminescence spectra of these films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak cantered at 450 nm. The optical band gap of the pure and copper-doped ZnO thin films calculated from optical transmission spectra (3.29-3.23 eV) were found to be increasing with increasing copper doping concentration. The refractive index dispersion curve of pure and Cu-doped ZnO film obeyed the single-oscillator model. The optical dispersion parameters such as E o , E d , and n_{∞}2 were calculated. Further, the nonlinear refractive index and nonlinear optical susceptibility were also calculated and interpreted.

Enhanced photoelectrochemical and optical performance of ZnO films tuned by Cr doping

NASA Astrophysics Data System (ADS)

Salem, M.; Akir, S.; Massoudi, I.; Litaiem, Y.; Gaidi, M.; Khirouni, K.

2017-04-01

In this paper, pure and Cr-doped nanostructured Zinc oxide thin films were synthesized by simple and low cost co-precipitation and spin-coating method with Cr concentration varying between 0.5 and 5 at.%. Crystalline structure of the prepared films was investigated by X-ray diffraction (XRD) and Raman spectroscopy techniques. XRD analysis indicated that the films were indexed as the hexagonal phase of wurtzite-type structure and demonstrated a decrease in the crystallite size with increasing Cr doping content. Cr doping revealed a significant effect on the optical measurements such as transmission and photoluminescence properties. The optical measurements indicated that Cr doping decreases the optical band gap and it has been shifted from 3.41 eV for pure ZnO film to 3.31 eV for 5 at.% Cr-doped one. The photoelectrochemical (PEC) sensing characteristics of Cr-doped ZnO layers were investigated. Amongst all photo-anodes with different Cr dopant concentration, the 2 at.% Cr incorporated ZnO films exhibited fast response and higher photoconduction sensitivity.

Facile Synthesis of Vanadium-Doped Ni3S2 Nanowire Arrays as Active Electrocatalyst for Hydrogen Evolution Reaction.

PubMed

Qu, Yuanju; Yang, Mingyang; Chai, Jianwei; Tang, Zhe; Shao, Mengmeng; Kwok, Chi Tat; Yang, Ming; Wang, Zhenyu; Chua, Daniel; Wang, Shijie; Lu, Zhouguang; Pan, Hui

2017-02-22

Ni 3 S 2 nanowire arrays doped with vanadium(V) are directly grown on nickel foam by a facile one-step hydrothermal method. It is found that the doping can promote the formation of Ni 3 S 2 nanowires at a low temperature. The doped nanowires show excellent electrocatalytic performance toward hydrogen evolution reaction (HER), and outperform pure Ni 3 S 2 and other Ni 3 S 2 -based compounds. The stability test shows that the performance of V-doped Ni 3 S 2 nanowires is improved and stabilized after thousands of linear sweep voltammetry test. The onset potential of V-doped Ni 3 S 2 nanowire can be as low as 39 mV, which is comparable to platinum. The nanowire has an overpotential of 68 mV at 10 mA cm -2 , a relatively low Tafel slope of 112 mV dec -1 , good stability and high Faradaic efficiency. First-principles calculations show that the V-doping in Ni 3 S 2 extremely enhances the free carrier density near the Fermi level, resulting in much improved catalytic activities. We expect that the doping can be an effective way to enhance the catalytic performance of metal disulfides in hydrogen evolution reaction and V-doped Ni 3 S 2 nanowire is one of the most promising electrocatalysts for hydrogen production.

The investigation of Ce doped ZnO crystal: The electronic, optical and magnetic properties

NASA Astrophysics Data System (ADS)

Wen, Jun-Qing; Zhang, Jian-Min; Qiu, Ze-Gang; Yang, Xu; Li, Zhi-Qin

2018-04-01

The electronic, optical and magnetic properties of Ce doped ZnO crystal have been studied by using first principles method. The research of formation energies show that Ce doped ZnO is energetically stable, and the formation energies reduce from 6.25% to 12.5% for Ce molar percentage. The energy band is still direct band gap after Ce doped, and band gap increases with the increase of Cesbnd Ce distance. The Fermi level moves upward into conduction band and the DOS moves to lower energy with the increase of Ce concentration, which showing the properties of n-type semiconductor. The calculated optical properties imply that Ce doped causes a red-shift of absorption peaks, and enhances the absorption of the visible light. The transition from ferromagnetic to antiferromagnetic has been found in Ce doped ZnO.

Impedance spectroscopy of undoped and Cr-doped ZnO gas sensors under different oxygen concentrations

NASA Astrophysics Data System (ADS)

Al-Hardan, N.; Abdullah, M. J.; Aziz, A. Abdul

2011-08-01

Thin films of undoped and chromium (Cr)-doped zinc oxide (ZnO) were synthesized by RF reactive co-sputtering for oxygen gas sensing applications. The prepared films showed a highly c-axis oriented phase with a dominant (0 0 2) peak appeared at a Bragg angle of around 34.13 °, which was lower than that of the standard reference of ZnO powder (34.42 °). The peak shifted to a slightly higher angle with Cr doping. The operating temperature of the ZnO gas sensor was around 350 °C, which shifted to around 250 °C with Cr-doping. The response of the sensor to oxygen gas was enhanced by doping ZnO with 1 at.% Cr. Impedance spectroscopy analysis showed that the resistance due to grain boundaries significantly contributed to the characteristics of the gas sensor.

In Situ X-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

McPeak, Kevin M.; Becker, Matthew A.; Britton, Nathan G.

2010-12-03

Chemical bath deposition (CBD) offers a simple and inexpensive route to deposit semiconductor nanostructures, but lack of fundamental understanding and control of the underlying chemistry has limited its versatility. Here we report the first use of in situ X-ray absorption spectroscopy during CBD, enabling detailed investigation of both reaction mechanisms and kinetics of ZnO nanowire growth from zinc nitrate and hexamethylenetetramine (HMTA) precursors. Time-resolved X-ray absorption near-edge structure (XANES) spectra were used to quantify Zn(II) speciation in both solution and solid phases. ZnO crystallizes directly from [Zn(H{sub 2}O){sub 6}]{sup 2+} without long-lived intermediates. Using ZnO nanowire deposition as an example,more » this study establishes in situ XANES spectroscopy as an excellent quantitative tool to understand CBD of nanomaterials.« less

Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.

PubMed

Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun

2012-10-24

The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.

Structural and plasmonic properties of noble metal doped ZnO nanomaterials

NASA Astrophysics Data System (ADS)

Pathak, Trilok K.; Swart, H. C.; Kroon, R. E.

2018-04-01

Noble metal doped ZnO has been synthesized by the combustion method and the effect of different metals (Ag, Au, Pd) on the structural, morphological, optical, photoluminescence and localized surface plasmon resonance (LSPR) properties has been investigated. X-ray diffraction analysis revealed that the ZnO had a hexagonal wurtzite structure and the crystallite sizes were affected by the doping. The formation of noble metal nanoparticles (NPs) was investigated using transmission electron microscopy and diffuse reflectance spectra. The LSPR of the metallic NPs was predicted using Mie theory calculations. The absorption spectra were calculated using the Kubelka-Munk function and the optical bandgap varied from 3.06 to 3.18 eV for the different doping materials. The experimental results suggest that the origin of enhanced emission was due to direct interaction between the laser photons and the noble material NPs which in turn leads to photoemission transfer of electrons from the noble metals NPs to the conduction band of ZnO.

Mn-doping-induced photocatalytic activity enhancement of ZnO nanorods prepared on glass substrates

NASA Astrophysics Data System (ADS)

Putri, Nur Ajrina; Fauzia, Vivi; Iwan, S.; Roza, Liszulfah; Umar, Akrajas Ali; Budi, Setia

2018-05-01

Mn-doped ZnO nanorods were synthesized on glass substrates via a two-steps process of ultrasonic spray pyrolysis and hydrothermal methods with four different concentrations Mn-doping (0, 1, 3, and 7 mol%). Introduction of Mn into ZnO is known could enhance the photocatalytic activity owing to the increase in the defect sites that effectively suppress the recombination of free electrons and holes. In this study, results show that Mn-doping has effectively modified the nucleations and crystal growth of ZnO, as evidenced by the increasing in the diameter, height, and the number of nanorods per unit area, besides slightly reduced the band gap and increased the oxygen vacancy concentrations in the ZnO lattice. This condition has successfully multiplied the photocatalytic performance of the ZnO nanorods in the degradation of methylene blue (MB) compared to the undoped-ZnO sample where in the typical process the MB can be degraded approximately 77% within only 35 min under a UV light irradiation.

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

NASA Astrophysics Data System (ADS)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

2018-05-01

In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Wen, E-mail: wenxiong@cqu.edu.cn; Chen, Wensuo

2013-12-21

The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbandsmore » and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.« less

Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

NASA Astrophysics Data System (ADS)

Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

2016-10-01

One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

Morphological Effect of Doping Environment on Silicon Nanowires Grown by Plasma-Assisted Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Lohn, Andrew J.; Cormia, Robert D.; Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Kobayashi, Nobuhiko P.

2012-11-01

Physical properties of semiconductor nanowires are tied intimately to their specific morphologies such as length and diameter. We studied the growth of silicon nanowires and found their lengths and diameters to vary over orders of magnitude in different doping environments. In all cases we examined, doping resulted in increased diameters. In addition, boron doping was found to accelerate volume growth rate while arsenic and antimony both appeared to slow it down. We further studied the formation of the native oxides that cover the nanowires. X-ray photoelectron spectroscopy indicated that properties of the native oxides are also dependent on doping environment and correlated to doping-dependent shifts in apparent binding energy of the Si 2p3/2 peak illustrating that the electronic contribution is the dominant mechanism for the oxide growth.

Contrastive Study on the Structure and the Ultraviolet Absorption Property of Multiple-Doped and Element-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Xu, Yunyun; Zhang, Tao; Lin, Zhenrong; Tian, Yanfeng; Zhou, Shandan

Sb2O3- and CeO2-doped ZnO thin films were prepared by RF magnetron sputtering technique. The influence of Sb2O3 and CeO2 on the structure and ultraviolet (UV) absorption properties was studied by X-ray diffraction and UV-Vis spectrophotometry. Results show that multiple doping of films had a prominent effect on the development of crystal grains and the UV absorption property. Ce and Sb exist in many forms in the ZnO film. The multiple-doped films also show enhanced UVA absorption, and the UV absorption peak widens and the absorption intensity increases. Sb plays a dominant role on the structure and UV absorption of ZnO thin films, which are enhanced by Ce.

A dual-colored bio-marker made of doped ZnO nanocrystals

NASA Astrophysics Data System (ADS)

Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

2008-08-01

Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

DOE PAGES

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; ...

2016-01-01

Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

Structural, optical, and electrical properties of Ni-doped ZnO nanorod arrays prepared via sonicated sol-gel immersion method

NASA Astrophysics Data System (ADS)

Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

2018-05-01

Nickel (Ni)-doped zinc oxide (ZnO) nanorod array films were synthesised using sonicated sol-gel immersion method. The FESEM images showed that the Ni-doped ZnO nanorod arrays possess hexagonal shape with average diameter about 120 nm and thickness about 1.10 µm. The Ni-doped ZnO nanorod arrays possess better transmittance properties with 3.27 eV of optical band gap energy and 40 meV of urbach energy. The current-voltage (I-V) measurement indicated that the conductivity of ZnO film slightly improved with Ni-doping. The doped film displayed good humidity sensing performance with sensitivity of 1.21.

Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

2015-12-01

Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

Structural, morphological and magnetic properties of pure and Ni-doped ZnO nanoparticles synthesized by sol-gel method

NASA Astrophysics Data System (ADS)

Undre, Pallavi G.; Birajdar, Shankar D.; Kathare, R. V.; Jadhav, K. M.

2018-05-01

In this work pure and Ni-doped ZnO nanoparticles have been prepared by sol-gel method. Influence of nickel doping on structural, morphological and magnetic properties of prepared nanoparticles was investigated by X-ray diffraction technique (XRD), Scanning electron microscopy (SEM) and Pulse field magnetic hysteresis loop. X-ray diffraction pattern shows the formation of a single phase with hexagonal wurtzite structure of both pure and Ni-doped ZnO nanoparticles. The lattice parameters `an' and `c' of Ni-doped ZnO is slightly less than that of pure ZnO nanoparticles. The crystalline size of prepared nanoparticles is found to be in 29 and 31 nm range. SEM technique used to examine the surface morphology of samples, SEM image confirms the nanocrystalline nature of present samples. From the pulse field hysteresis loop technique pure and Ni-doped ZnO nanoparticles show diamagnetic and ferromagnetic behavior at room temperature respectively.

Enhanced luminescence in Eu-doped ZnO nanocrystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Keigo, E-mail: ksuzuki@murata.com; Murayama, Koji; Tanaka, Nobuhiko

We found an enhancement of Eu{sup 3+} emissions in Eu-doped ZnO nanocrystalline films fabricated by microemulsion method. The Eu{sup 3+} emission intensities were increased by reducing annealing temperatures from 633 K to 533 K. One possible explanation for this phenomenon is that the size reduction enhances the energy transfer from ZnO nanoparticles to Eu{sup 3+} ions. Also, the shift of the charge-transfer band into the low-energy side of the absorption edge is found to be crucial, which seems to expedite the energy transfer from O atoms to Eu{sup 3+} ions. These findings will be useful for the material design of Eu-doped ZnOmore » phosphors.« less

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

PubMed Central

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood

2015-01-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

NASA Astrophysics Data System (ADS)

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

2015-09-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells.

PubMed

Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood

2015-09-08

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Confined Doping for Control of Transport Properties in Nanowires and Nanofilms

NASA Astrophysics Data System (ADS)

Zhong, Jianxin; Stocks, G. Malcolm

2006-03-01

Doping, an essential element for manipulation of electronic transport in traditional semiconductor industry, is widely expected to play important role as well in control of transport properties in nanostructures. However, traditional theory of electronic disorder predicts that doping in one-dimensional and two-dimensional systems leads to carrier localization, limiting practical applications due to poor carrier mobility. Here, a novel concept is proposed that offers the possibility to significantly increase carrier mobility by confining the distribution of dopants within a particular region [1]. Thus, the doped nanostructure becomes a coupled system comprising a doped subsystem and a perfect crystalline subsystem. We showed that carrier mobility in such a dopped nanowire or a nanofilm exhibits counterintuitive behavior in the regime of heavy doping. In particular, the larger the dopant concentration the higher the carrier mobility; we trace this transition to the existence of quasi-mobility-edges in the nanowires and mobility edges in nanofilms. *J.X. Zhong and G.M. Stocks, Nano Lett., in press, (2005)

Effects on the magnetic and optical properties of Co-doped ZnO at different electronic states

NASA Astrophysics Data System (ADS)

Huo, Qingyu; Xu, Zhenchao; Qu, Linfeng

2017-12-01

Both blue and red shifts in the absorption spectrum of Co-doped ZnO have been reported at a similar concentration range of doped Co. Moreover, the sources of magnetism of Co-doped ZnO are controversial. To solve these problems, the geometry optimization and energy of different Co-doped ZnO systems were calculated at the states of electron spin polarization and nonspin polarization by adopting plane-wave ultra-soft pseudopotential technology based on density function theory. At the state of electron nonspin polarization, the total energies increased as the concentration of Co-doped increased. The doped systems also became unstable. The formation energies increased and doping became difficult. Furthermore, the band gaps widened and the absorption spectrum exhibited a blue shift. The band gaps were corrected by local-density approximation + U at the state of electron spin polarization. The magnetic moments of the doped systems weakened as the concentration of doped Co increased. The magnetic moments were derived from the coupling effects of sp-d. The band gaps narrowed and the absorption spectrum exhibited a red shift. The inconsistencies of the band gaps and absorption spectrum at the states of electron spin polarization and nonspin polarization were first discovered in this research, and the sources of Co-doped ZnO magnetism were also reinterpreted.

Intrinsic ferromagnetism in nanocrystalline Mn-doped ZnO depending on Mn concentration.

PubMed

Subramanian, Munisamy; Tanemura, Masaki; Hihara, Takehiko; Soga, Tetsuo; Jimbo, Takashi

2011-04-01

The physical properties of Zn(1-x)Mn(x)O nanoparticles synthesized by thermal decomposition are extensively investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman light scattering and Hysteresis measurements. XRD and XPS spectra reveal the absence of secondary phase in nanocrystalline ZnO doped with 5% or less Mn; and, later confirms that the valance state of Mn to be 2+ for all the samples. Raman spectra exhibit a peak at 660 cm(-1) which we attribute to the intrinsic lattice defects of ZnO with increasing Mn concentration. Overall, our results demonstrate that ferromagnetic properties can be realized while Mn-doped ZnO obtained in the nanocrystalline form.

Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

PubMed Central

Kim, Hyun Chan; Song, Sangho; Kim, Jaehwan

2016-01-01

This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO) nanowire (NW) grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices. PMID:27649184

Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

PubMed Central

2011-01-01

Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

Doping assessment in GaAs nanowires.

PubMed

Goktas, N Isik; Fiordaliso, E M; LaPierre, R R

2018-06-08

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Doping assessment in GaAs nanowires

NASA Astrophysics Data System (ADS)

Isik Goktas, N.; Fiordaliso, E. M.; LaPierre, R. R.

2018-06-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p–n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Semiconductor Nanowires and Nanotubes for Energy Conversion

NASA Astrophysics Data System (ADS)

Fardy, Melissa Anne

Se nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can

Facile hydrothermal synthesis of mn doped ZnO nanopencils for development of amperometric glucose biosensors

NASA Astrophysics Data System (ADS)

Shukla, Mayoorika; Pramila; Agrawal, Jitesh; Dixit, Tejendra; Palani, I. A.; Singh, Vipul

2018-05-01

Mn doped ZnO nanopencils were synthesized via low temperature hydrothermal process for fabrication of enzymatic electrochemical glucose biosensor. The KMnO4 was found to play a dual role in modifying morphology and inducing Mn doping. Interestingly, two different types of morphologies viz nanorods and nanopencils along with Mn doping in the later were obtained. Incorporation of Mn has shown a tremendous effect on the morphological variations, repression of defects and electrochemical charge transfer at electrode electrolyte interface. The possible reason behind obtained morphological changes has been proposed which in turn were responsible for the improvement in the different figure of merits of as fabricated enzymatic electrochemical biosensor. There has been a 17 fold enhancement in the sensitivity of the as fabricated glucose biosensor from ZnO nanorods to Mn doped ZnO nanopencils which can be attributed to morphological variation and Mn doping.

Effects on the optical properties and conductivity of Ag-N co-doped ZnO

NASA Astrophysics Data System (ADS)

Xu, Zhenchao; Hou, Qingyu; Qu, Lingfeng

2017-01-01

Nowadays, the studies of the effects on the optical bandgap, absorption spectrum, and electrical properties of Ag-N co-doped ZnO have been extensively investigated. However, Ag and N atoms in doped systems are randomly doped, and the asymmetric structure of ZnO is yet to be explored. In this paper, the geometric structure, stability, density of states, absorption spectra and conductivity of pure and Ag-N co-doped Zn1-xAgxO1-xNx(x=0.03125, 0.0417 and 0.0625) in different orientations are calculated by using plane-wave ultrasoft pseudopotential on the basis of density functional theory with GGA+U method. Results show that the volume, equivalent total energy and formation energy of the doped system increase as the concentration of Ag-N co-doped Zn1-xAgxO1-xNx increases at the same doping mode. The doped systems also become unstable, and difficulty in doping. At the same concentration of Ag-N co-doped Zn1-xAgxO1-xNx, the systems with Ag-N along the c-axis orientation is unstable, and doping is difficult. The optical bandgap of Ag-N co-doped systems is narrower than that of the pure ZnO. At the same doping mode, the optical bandgap of the systems with Ag-N perpendicular to the c-axis orientation becomes narrow as the concentration of Ag-N co-doped Zn1-xAgxO1-xNx increases. The absorption spectra of the doped systems exhibit a red shift, and this red shift becomes increasingly significant as the concentration of Ag-N co-doped Zn1-xAgxO1-xNx increases. Under the same condition, the relative hole concentrations of the doped systems increases, the hole effective mass in valence band maximum decreases, the hole mobility decreases, the ionization energy decreases, Bohr radius increases, the conductance increases and the conductivity become better. Our results may be used as a basis for the designing and preparation of new optical and electrical materials for Ag-N co-doped ZnO applied in low temperature end of temperature difference battery.

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

NASA Astrophysics Data System (ADS)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

First-principles research on the optical and electrical properties and mechanisms of In-doped ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Xi, Dongmin; Li, Wenling; Jia, Xiaofang; Xu, Zhenchao

2018-05-01

The absorption spectra and conductivity of In-doped ZnO still exhibit differences. To resolve this contradiction, the ZnO supercell models with different In doping amounts and the Zn0.9375In0.0625(Zni)0.0625O supercell model were both constructed. When the geometrical structure of all the models was optimized, the GGA + U and GGA used to calculate the energy. In the range of In doping used in this study, the formation energy of In-doped ZnO under Zn-rich conditions is lower than that under O-rich conditions, thereby implying a more stability of In-doped ZnO under Zn-rich than that under O-rich. With the increased In doping content, the volume and the formation energy of the doped system increase, the doped systems become unstable, and doping becomes difficult. Furthermore, the band gaps are narrowed, and the red shift of absorption spectrum is enhanced. In the In doping amount ranging within 0.01389-0.05556, the electron effective mass decreases first and subsequently increases, and the electron concentration increases. The mobility and conductivity also increase first and subsequently decrease. These results are in accordance with the experimental results. The volume of Zn0.9375In0.0625(Zni)0.0625O with the coexistence of In replacing Zn and interstitial Zn is large. The band gap is widened and the absorption spectrum is blue-shifted in the UV region.

Low-frequency zone boundary phonons in Li doped ZnO ceramics

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Katiyar, R. S.

2008-09-01

Room temperature Raman spectra of Li doped ZnO (Zn1-xLixO) ceramics with varying Li concentrations (x =0.0, 0.05, 0.10, and 0.15) are investigated in this study. Four peaks were identified at 96.6, 127, 157, and 194 cm-1 in the Li doped samples. The peaks at 127, 157, and 194 cm-1 are assigned to zone boundary phonons in ZnO [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)], and appear due to disorder in ZnO lattice with Li incorporation. Lithium, owing to its smaller radius, adjusts itself anywhere in the ZnO lattice and breaks the crystal translational symmetry to a large extent, compared to other dopants. Disorder in the lattice is seen to be finely modulated with varying Li content. The peak at 96.6 cm-1 is hypothesized to be a projection of the vibrational motion of Li atoms at lower frequencies, which contributes in a major fashion at higher frequencies, due to its lighter mass than Zn or O atoms.

A fast and effective approach for reversible wetting-dewetting transitions on ZnO nanowires

PubMed Central

Yadav, Kavita; Mehta, B. R.; Bhattacharya, Saswata; Singh, J. P.

2016-01-01

Here, we demonstrate a facile approach for the preparation of ZnO nanowires (NWs) with tunable surface wettability that can be manipulated reversibly in a controlled manner from a superhydrophilic state to a superhydrophobic state. The as-synthesized ZnO NWs obtained by a chemical vapor deposition method are superhydrophilic with a contact angle (CA) value of ~0°. After H2 gas annealing at 300 °C for 90 minutes, ZnO NWs display superhydrophobic behavior with a roll-off angle less than 5°. However, O2 gas annealing converts these superhydrophobic ZnO NWs into a superhydrophilic state. For switching from superhydrophobic to superhydrophilic state and vice versa in cyclic manner, H2 and O2 gas annealing treatment was used, respectively. A model based on density functional theory indicates that the oxygen-related defects are responsible for CA switching. The water resistant properties of the ZnO NWs coating is found to be durable and can be applied to a variety of substrates including glass, metals, semiconductors, paper and even flexible polymers. PMID:27713536

Photocatalytic degradation of humic substances in aqueous solution using Cu-doped ZnO nanoparticles under natural sunlight irradiation.

PubMed

Maleki, Afshin; Safari, Mahdi; Shahmoradi, Behzad; Zandsalimi, Yahya; Daraei, Hiua; Gharibi, Fardin

2015-11-01

In this study, Cu-doped ZnO nanoparticles were investigated as an efficient synthesized catalyst for photodegradation of humic substances in aqueous solution under natural sunlight irradiation. Cu-doped ZnO nanocatalyst was prepared through mild hydrothermal method and was characterized using FT-IR, powder XRD and SEM techniques. The effect of operating parameters such as doping ratio, initial pH, catalyst dosage, initial concentrations of humic substances and sunlight illuminance were studied on humic substances degradation efficiency. The results of characterization analyses of samples confirmed the proper synthesis of Cu-doped ZnO nanocatalyst. The experimental results indicated the highest degradation efficiency of HS (99.2%) observed using 1.5% Cu-doped ZnO nanoparticles at reaction time of 120 min. Photocatalytic degradation efficiency of HS in a neutral and acidic pH was much higher than that at alkaline pH. Photocatalytic degradation of HS was enhanced with increasing the catalyst dosage and sunlight illuminance, while increasing the initial HS concentration led to decrease in the degradation efficiency of HS. Conclusively, Cu-doped ZnO nanoparticles can be used as a promising and efficient catalyst for degradation of HS under natural sunlight irradiation.

Polycrystalline ZnO and Mn-doped ZnO nanorod arrays with variable dopant content via a template based synthesis from Zn(II) and Mn(II) Schiff base type single source molecular precursors

NASA Astrophysics Data System (ADS)

Pashchanka, Mikhail; Hoffmann, Rudolf C.; Burghaus, Olaf; Corzilius, Björn; Cherkashinin, Gennady; Schneider, Jörg J.

2011-01-01

The synthesis and full characterisation of pure and Mn-doped polycrystalline zinc oxide nanorods with tailored dopant content are obtained via a single source molecular precursor approach using two Schiff base type coordination compounds is reported. The infiltration of precursor solutions into the cylindrical pores of a polycarbonate template and their thermal conversion into a ceramic green body followed by dissolution of the template gives the desired ZnO and Mn-doped ZnO nanomaterial as compact rods. The ZnO nanorods have a mean diameter between 170 and 180 nm or 60-70 nm, depending on the template pore size employed, comprising a length of 5-6 μm. These nanorods are composed of individual sub-5 nm ZnO nanocrystals. Exact doping of these hierarchically structured ZnO nanorods was achieved by introducing Mn(II) into the ZnO host lattice with the precursor complex Diaquo-bis[2-(meth-oxyimino)-propanoato]manganese, which allows to tailor the exact Mn(II) doping content of the ZnO rods. Investigation of the Mn-doped ZnO samples by XRD, TEM, XPS, PL and EPR, reveals that manganese occurs exclusively in its oxidation state + II and is distributed within the volume as well as on the surface of the ZnO host.

Observation of defect-assisted enhanced visible whispering gallery modes in ytterbium-doped ZnO microsphere

NASA Astrophysics Data System (ADS)

Khanum, Rizwana; Moirangthem, Rakesh S.; Das, Nayan Mani

2017-06-01

Smooth surfaced and crystalline undoped and ytterbium doped zinc oxide (ZnO) microspheres having an approximate size of 3-5 μm were synthesized by hydrothermal process. Out of these microspheres, a single microparticle was chosen and engaged as a whispering gallery wave microresonator. The defect induced luminescence from an individual ZnO microsphere was investigated with micro-photoluminescence measurement in the spectral range of 565 to 740 nm under the excitation of a green laser having a centered wavelength at 532 nm. The defects-related emissions from a single ZnO microsphere show optical resonance peaks so-called "whispering gallery modes" (WGMs) which are confirmed with the theoretical calculation. Further, ZnO microspheres were chemically doped with the different molar percentages of Ytterbium (Yb), and enhancement in their emission properties was investigated. Our experimental results show that ZnO microspheres with 0.5 mol. % doping of Yb gives the strongest optical emission and has highest Q-factor which can be employed in the development of WGM based optical biosensor or laser.

Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

PubMed

Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

2015-01-01

Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

Synthesis, self-assembly, and properties of Mn doped ZnO nanoparticles.

PubMed

Barick, K C; Bahadur, D

2007-06-01

We report here a novel process to prepare Mn doped ZnO nanoparticles by a soft chemical route at low temperature. The synthesis process is based on the hydrolysis of zinc acetate dihydrate and manganese acetate tetrahydrate heated under reflux to 160-175 degrees C using diethylene glycol as a solvent. X-ray diffraction analysis reveals that the Mn doped ZnO crystallizes in a wurtzite structure with crystal size of 15-25 nm. These nano size crystallites of Mn doped ZnO self-organize into polydisperse spheres in size ranging from 100-400 nm. Transmission Electron Microscopy image also shows that each sphere is made up of numerous nanocrystals of average diameter 15-25 nm. By means of X-ray photoelectron spectroscopy and electron spin resonance spectroscopy, we determined the valence state of Mn ions as 2+. These nanoparticles were found to be ferromagnetic at room temperature. Monodisperse porous spheres (approximately 250 nm) were obtained by size selective separation technique and then self-assembled in a closed pack periodic array through sedimentation with slow solvent evaporation, which gives strong opalescence in visible region.

Selective doping of silicon nanowires by means of electron beam stimulated oxide etching.

PubMed

Pennelli, G; Totaro, M; Piotto, M

2012-02-08

Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed. © 2012 American Chemical Society

Role of nickel doping on structural, optical, magnetic properties and antibacterial activity of ZnO nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Palanisamy, S.

Highlights: • The XRD analyses revealed that the synthesizes nickel doped ZnO (Zn{sub 1−x}Ni{sub x}O, x = 0.0, 0.03, 0.06 and 0.09) nanostructures have hexagonal wurtzite structure. • The photoluminescence measurements revealed that the broad emission was composed of different bands due to zinc and oxygen vacancies. • X-ray photoelectron spectroscopy (XPS) confirmed the Ni incorporation in ZnO lattice as Ni{sup 2+} ions. • Room temperature ferromagnetism was observed due to the oxygen vacancies and zinc interstitials are the main reasons for ferromagnetism in Ni doped ZnO NPs. - Abstract: Zn{sub 1−x}Ni{sub x}O nanoparticles were synthesized by co-precipitation method. Themore » crystallite sizes of the synthesized samples found to decrease from 38 to 26 nm with increase in nickel concentration. FTIR spectra confirmed the presence of Zn−O stretching bands at 577, 573, 569 and 565 cm{sup −1} in the respective ZnO NPs. Optical absorption spectra revealed the red shifted and estimated band gap is found to decrease with increase of Ni doping concentration. The PL spectra of all the samples exhibited a broad emission at 390 nm in the visible range. The carriers (donors) bounded on the Ni sites were observed from the micro Raman spectroscopic studies. Pure and Ni doped ZnO NPs showed significant changes in the M–H loop, especially the diamagnetic behavior changed into ferromagnetic nature for Ni doped samples. The antiferromagnetic super-exchange interactions between Ni{sup 2+} ions is increased in higher Ni doped ZnO NPs and also their antibacterial activity has been studied.« less

Electrical and optical evaluation of n-type doping in In x Ga(1-x)P nanowires.

PubMed

Zeng, Xulu; Mourão, Renato T; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T

2018-06-22

To harvest the benefits of III-V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga (1-x) P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H 2 S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 10 16 cm -3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H 2 S as dopant precursors using our parameters is measured to be ∼2 × 10 18 cm -3 , and ∼1 × 10 19 cm -3 , respectively (by Hall effect measurements). Hence, both TESn and H 2 S are suitable precursors for a wide range of n-doping levels in In x Ga (1-x) P nanowires needed for optoelectronic devices, grown via the vapor-liquid-solid mode.

Zinc oxide nanowire networks for macroelectronic devices

NASA Astrophysics Data System (ADS)

Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

2009-04-01

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Cu-doped ZnO nanorod arrays: the effects of copper precursor and concentration

PubMed Central

2014-01-01

Cu-doped ZnO nanorods have been grown at 90°C for 90 min onto a quartz substrate pre-coated with a ZnO seed layer using a hydrothermal method. The influence of copper (Cu) precursor and concentration on the structural, morphological, and optical properties of ZnO nanorods was investigated. X-ray diffraction analysis revealed that the nanorods grown are highly crystalline with a hexagonal wurtzite crystal structure grown along the c-axis. The lattice strain is found to be compressive for all samples, where a minimum compressive strain of −0.114% was obtained when 1 at.% Cu was added from Cu(NO3)2. Scanning electron microscopy was used to investigate morphologies and the diameters of the grown nanorods. The morphological properties of the Cu-doped ZnO nanorods were influenced significantly by the presence of Cu impurities. Near-band edge (NBE) and a broad blue-green emission bands at around 378 and 545 nm, respectively, were observed in the photoluminescence spectra for all samples. The transmittance characteristics showed a slight increase in the visible range, where the total transmittance increased from approximately 80% for the nanorods doped with Cu(CH3COO)2 to approximately 90% for the nanorods that were doped with Cu(NO3)2. PMID:24855460

Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

NASA Astrophysics Data System (ADS)

Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

2018-04-01

Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

PubMed

Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

2015-06-07

Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

Gas-sensing performances of Cd-doped ZnO nanoparticles synthesized by a surfactant-mediated method for n-butanol gas

NASA Astrophysics Data System (ADS)

Zhao, Rongjun; Li, Kejin; Wang, Zhezhe; Xing, Xinxin; Wang, Yude

2018-01-01

Zinc oxide nanoparticles with the different Cd doping contents were prepared by with a surfactant-mediated method in this paper. The effects of Cd doping on the gas sensing properties of the ZnO nanoparticles were studied. The morphology and microstructure of as-prepared samples were characterized by X-ray diffraction (XRD); scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM), respectively. The results reveal that all the products are the high crystalline hexagonal wurtzite ZnO crystal structure. The gas-sensing characteristics of the Cd doped ZnO nanoparticles for volatile organic compounds (VOCs) were investigated. At its optimal operation temperature of 300 °C, the sensing properties of the Cd doped ZnO nanoparticles for n-butanol gas exhibit a high-performance gas sensing performances including high gas response, good selectivity, response/recovery time, and repeatability as well as stability. Especially, its response reaches 130 for 100 ppm n-butanol of ZnO nanoparticles with 2.5% Cd doping. Those values demonstrate the potential of using as-prepared Cd doped ZnO nanoparticles for n-butanol gas detection, making them to be promising candidates for practical detectors to n-butanol gas. Apart from these, the mechanism related to the advanced properties was also investigated and presented.

Efficient n-type doping of zinc-blende III-V semiconductor nanowires

NASA Astrophysics Data System (ADS)

Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

2014-03-01

We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Synthesis of high crystallinity ZnO nanowire array on polymer substrate and flexible fiber-based sensor.

PubMed

Liu, Jinmei; Wu, Weiwei; Bai, Suo; Qin, Yong

2011-11-01

Well aligned ZnO nanowire (NW) arrays are grown on Kevlar fiber and Kapton film via the chemical vapor deposition (CVD) method. These NWs have better crystallinity than those synthesized through the low-temperature hydrothermal method. The average length and diameter of ZnO NWs grown on Kevlar fiber can be controlled from 0.5 to 2.76 μm and 30 to 300 nm, respectively. A flexible ultraviolet (UV) sensor based on Kevlar fiber/ZnO NWs hybrid structure is made to detect UV illumination quantificationally.

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

NASA Astrophysics Data System (ADS)

Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

2017-12-01

We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

Enhancement of multiple-phonon resonant Raman scattering in Co-doped ZnO nanorods

NASA Astrophysics Data System (ADS)

Phan, The-Long; Vincent, Roger; Cherns, David; Dan, Nguyen Huy; Yu, Seong-Cho

2008-08-01

We have studied Raman scattering in Co-doped ZnO nanorods prepared by thermal diffusion. Experimental results show that the features of their non-resonant spectra are similar to Raman spectra from Co-doped ZnO materials investigated previously. Under resonant conditions, however, there is a strong enhancement of multiple-phonon Raman scattering processes. Longitudinal optical (LO)-phonon overtones up to eleventh order are observed. The modes become more obvious when the Co concentration diffused into ZnO nanorods goes to an appropriate value. This phenomenon is explained due to the shift of the band-gap energy and also due to the decrease in the intensity of near-band-edge luminescence. Our observation is in agreement with the prediction [J. F. Scott, Phys. Rev. B 2, 1209 (1970)] that the number of LO-phonon lines in ZnO is higher than that observed for CdS.

ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed

NASA Astrophysics Data System (ADS)

Cheng, Gang; Wu, Xinghui; Liu, Bing; Li, Bing; Zhang, Xingtang; Du, Zuliang

2011-11-01

ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications. In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4 × 105, 2.6 × 103 A/W, and 8.5 × 103, respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms. The physical mechanisms of the fast recovery properties have also been discussed.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

PubMed

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Electron paramagnetic resonance in Cu-doped ZnO

NASA Astrophysics Data System (ADS)

Buchheit, R.; Acosta-Humánez, F.; Almanza, O.

2016-04-01

In this work, ZnO and Cu-doped ZnO nanoparticles (Zn1-xCuxO, x = 3%), with a calcination temperature of 500∘C were synthesized using the sol-gel method. The particles were analyzed using atomic absorption spectroscopy (AAS), X-ray diffraction (XRD) and electron paramagnetic resonance (EPR) at X-band, measurement in a temperature range from 90 K to room temperature. AAS confirmed a good correspondence between the experimental doping concentration and the theoretical value. XRD reveals the presence of ZnO phase in hexagonal wurtzite structure and a nanoparticle size for the samples synthesized. EPR spectroscopy shows the presence of point defects in both samples with g-values of g = 1.959 for shallow donors and g = 2.004 for ionized vacancies. It is important when these materials are required have been used as catalysts, as suggested that it is not necessary prepare them at higher temperature. A simulation of the Cu EPR signal using an anisotropic spin Hamiltonian was performed and showed good coincidence with the experimental spectra. It was shown that Cu2+ ions enter interstitial octahedral sites of orthorhombic symmetry in the wurtzite crystal structure. Temperature dependence of the EPR linewidth and signal intensity shows a paramagnetic behavior of the sample in the measurement range. A Néel temperature TN = 78 ± 19 K was determined.

Structural and optical characterization of ZnO nanowires grown on alumina by thermal evaporation method.

PubMed

Mute, A; Peres, M; Peiris, T C; Lourenço, A C; Jensen, Lars R; Monteiro, T

2010-04-01

Zinc oxide nanowires have been grown on alumina substrate by thermal evaporation of zinc nanopowder in the presence of oxygen flow. The growth was performed under ambient pressure and without the use of foreign catalyst. Scanning electron microscopy (SEM) observation showed that the as-grown sample consists of bulk ZnO crystal on the substrate surface with nanowires growing from this base. Growth mechanism of the observed morphology is suggested to be governed by the change of zinc vapour supersaturation during the growth process. X-ray diffraction (XRD) measurement was used to identify the crystalline phase of the nanowires. Optical properties of the nanowires were investigated using Raman scattering and photoluminescence (PL). The appearance of dominant, Raman active E2 (high) phonon mode in the Raman spectrum has confirmed the wurtzite hexagonal phase of the nanowires. With above bandgap excitation the low temperature PL recombination is dominated by donor bound exciton luminescence at -3.37 eV with a narrow full width at half maximum. Free exciton emission is also seen at low temperature and can be observed up to room temperature. The optical data indicates that the grown nanowires have high optical quality.

Diameter and location control of ZnO nanowires using electrodeposition and sodium citrate

NASA Astrophysics Data System (ADS)

Lifson, Max L.; Levey, Christopher G.; Gibson, Ursula J.

2013-10-01

We report single-step growth of spatially localized ZnO nanowires of controlled diameter to enable improved performance of piezoelectric devices such as nanogenerators. This study is the first to demonstrate the combination of electrodeposition with zinc nitrate and sodium citrate in the growth solution. Electrodeposition through a thermally-grown silicon oxide mask results in localization, while the growth voltage and solution chemistry are tuned to control the nanowire geometry. We observe a competition between lateral (relative to the (0001) axis) citrate-related morphology and voltage-driven vertical growth which enables this control. High aspect ratios result with either pure nitrate or nitrate-citrate mixtures if large voltages are used, but low growth voltages permit the growth of large diameter nanowires in solution with citrate. Measurements of the current density suggest a two-step growth process. An oxide mask blocks the electrodeposition, and suppresses nucleation of thermally driven growth, permitting single-step lithography on low cost p-type silicon substrates.

Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

PubMed

Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

2013-05-21

The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

Effects of gold diffusion on n-type doping of GaAs nanowires.

PubMed

Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

2010-11-10

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

Morphology-controllable of Sn doped ZnO nanorods prepared by spray pyrolysis for transparent electrode application

NASA Astrophysics Data System (ADS)

Hameed, M. Shahul; Princice, J. Joseph; Babu, N. Ramesh; Zahirullah, S. Syed; Deshmukh, Sampat G.; Arunachalam, A.

2018-05-01

Transparent conductive Sn doped ZnO nanorods have been deposited at various doping level by spray pyrolysis technique on glass substrate. The structural, surface morphological and optical properties of these films have been investigated with the help of X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer respectively. XRD patterns revealed a successful high quality growth of single crystal ZnO nanorods with hexagonal wurtzite structure having (002) preferred orientation. The scanning electron microscope (SEM) image of the prepared films exposed the uniform distribution of Sn doped ZnO nanorod shaped grains. All these films were highly transparent in the visible region with average transmittance of 90%.

Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com

2015-06-24

We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption ofmore » ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.« less

Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

NASA Astrophysics Data System (ADS)

Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

Long-Term Stability of Oxide Nanowire Sensors via Heavily Doped Oxide Contact.

PubMed

Zeng, Hao; Takahashi, Tsunaki; Kanai, Masaki; Zhang, Guozhu; He, Yong; Nagashima, Kazuki; Yanagida, Takeshi

2017-12-22

Long-term stability of a chemical sensor is an essential quality for long-term collection of data related to exhaled breath, environmental air, and other sources in the Internet of things (IoT) era. Although an oxide nanowire sensor has shown great potential as a chemical sensor, the long-term stability of sensitivity has not been realized yet due to electrical degradation under harsh sensing conditions. Here, we report a rational concept to accomplish long-term electrical stability of metal oxide nanowire sensors via introduction of a heavily doped metal oxide contact layer. Antimony-doped SnO 2 (ATO) contacts on SnO 2 nanowires show much more stable and lower electrical contact resistance than conventional Ti contacts for high temperature (200 °C) conditions, which are required to operate chemical sensors. The stable and low contact resistance of ATO was confirmed for at least 1960 h under 200 °C in open air. This heavily doped oxide contact enables us to realize the long-term stability of SnO 2 nanowire sensors while maintaining the sensitivity for both NO 2 gas and light (photo) detections. The applicability of our method is confirmed for sensors on a flexible polyethylene naphthalate (PEN) substrate. Since the proposed fundamental concept can be applied to various oxide nanostructures, it will give a foundation for designing long-term stable oxide nanomaterial-based IoT sensors.

Pure and Sn-doped ZnO films produced by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Holmelund, E.; Schou, J.; Tougaard, S.; Larsen, N. B.

2002-09-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced with Sn concentrations up to 16%. The specific resistivity is found to increase and the transmission of visible light to decrease with increasing Sn concentration.

Cd-doped ZnO nano crystalline thin films prepared at 723K by spray pyrolysis

NASA Astrophysics Data System (ADS)

Joishy, Sumanth; Rajendra B., V.

2018-04-01

Ternary Zn1-xCdxO(x=0.10, 0.40, 0.70 at.%) thin films of 0.025M precursor concentration have been successfully deposited on preheated (723K) glass substrates using spray pyrolysis route. The structure, morphology and optical properties of deposited films have been characterized by X-ray diffraction, Scanning Electron Microscopy (SEM) and UV-Visible spectrophotometry. X-ray diffraction study shows that the prepared films are polycrystalline in nature. 10% Cd doped ZnO film belongs to the hexagonal wurtzite system and 70% Cd doped ZnO film belongs to the cubic system, although mixed phases were formed for 40% Cd doped ZnO film. The optical transmittance spectra has shown red shift with increasing cadmium content. Optical energy band gap has been reduced with cadmium dopant.

Effect of Li doping on the electric and pyroelectric properties of ZnO thin films

NASA Astrophysics Data System (ADS)

Trinca, L. M.; Galca, A. C.; Boni, A. G.; Botea, M.; Pintilie, L.

2018-01-01

Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li:ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com; Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior suchmore » as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.« less

Electrical and optical evaluation of n-type doping in In x Ga(1‑x)P nanowires

NASA Astrophysics Data System (ADS)

Zeng, Xulu; Mourão, Renato T.; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T.

2018-06-01

To harvest the benefits of III–V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga(1‑x)P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H2S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 1016 cm‑3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H2S as dopant precursors using our parameters is measured to be ∼2 × 1018 cm‑3, and ∼1 × 1019 cm‑3, respectively (by Hall effect measurements). Hence, both TESn and H2S are suitable precursors for a wide range of n-doping levels in In x Ga(1‑x)P nanowires needed for optoelectronic devices, grown via the vapor–liquid–solid mode.

Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method

NASA Astrophysics Data System (ADS)

Khomchenko, Viktoriya; Mazin, Mikhail; Sopinskyy, Mykola; Lytvyn, Oksana; Dan'ko, Viktor; Piryatinskii, Yurii; Demydiuk, Pavlo

2018-05-01

The simple way for silver doping of ZnO films is presented. The ZnO films were prepared by reactive rf-magnetron sputtering on silicon and sapphire substrates. Ag doping is carried out by sublimation of the Ag source located at close space at atmospheric pressure in air. Then the ZnO and ZnO-Ag films were annealed in wet media. The microstructure and optical properties of the films were compared and studied by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL). XRD results indicated that all the ZnO films have a polycrystalline hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. The annealing and Ag doping promote increasing grain's sizes and modification of grain size distribution. The effect of substrate temperature, substrate type, Ag doping and post-growth annealing of the films was studied by PL spectroscopy. The effect of Ag doping was obvious and identical for all the films, namely the wide visible bands of PL spectra are suppressed by Ag doping. The intensity of ultraviolet band increased 15 times as compared to their reference films on sapphire substrate. The ultraviolet/visible emission ratio was 20. The full width at half maximum (FWHM) for a 380 nm band was 14 nm, which is comparable with that of epitaxial ZnO. The data implies the high quality of ZnO-Ag films. Possible mechanisms to enhance UV emission are discussed.

Room temperature enhanced red emission from novel Eu(3+) doped ZnO nanocrystals uniformly dispersed in nanofibers.

PubMed

Zhang, Yongzhe; Liu, Yanxia; Li, Xiaodong; Wang, Qi Jie; Xie, Erqing

2011-10-14

Achieving red emission from ZnO-based materials has long been a goal for researchers in order to realize, for instance, full-color display panels and solid-state light-emitting devices. However, the current technique using Eu(3+) doped ZnO for red emission generation has a significant drawback in that the energy transfer from ZnO to Eu(3+) is inefficient, resulting in a low intensity red emission. In this paper, we report an efficient energy transfer scheme for enhanced red emission from Eu(3+) doped ZnO nanocrystals by fabricating polymer nanofibers embedded with Eu(3+) doped ZnO nanocrystals to facilitate the energy transfer. In the fabrication, ZnO nanocrystals are uniformly dispersed in polymer nanofibers prepared by the high electrical field electrospinning technique. Enhanced red emission without defect radiation from the ZnO matrix is observed. Three physical mechanisms for this observation are provided and explained, namely a small ZnO crystal size, uniformity distribution of ZnO nanocrystals in polymers (PVA in this case), and strong bonding between ZnO and polymer through the -OH group bonding. These explanations are supported by high resolution transmission emission microscopy measurements, resonant Raman scattering characterizations, photoluminescence spectra and photoluminescence excitation spectra measurements. In addition, two models exploring the 'accumulation layer' and 'depletion layer' are developed to explain the reasons for the more efficient energy transfer in our ZnO nanocrystal system compared to that in the previous reports. This study provides an important approach to achieve enhanced energy transfer from nanocrystals to ions which could be widely adopted in rare earth ion doped materials. These discoveries also provide more insights into other energy transfer problems in, for example, dye-sensitized solar cells and quantum dot solar cells.

Structural, chemical and optical evaluation of Cu-doped ZnO nanoparticles synthesized by an aqueous solution method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iribarren, A., E-mail: augusto@imre.oc.uh.cu; Hernández-Rodríguez, E.; Maqueira, L.

Highlights: • Cu-doped ZnO nanoparticles obtained by chemical synthesis. • Substitutional or interstitial Cu into ZnO lead specific structural, chemical, and optical changes. • Incorporation efficiency of Cu atoms in ZnO as a function of the Cu concentration in the precursor dissolution. - Abstract: In this work a study of ZnO and Cu-doped ZnO nanoparticles obtained by chemical synthesis in aqueous media was carried out. Structural analysis gave the dominant presence of wurtzite ZnO phase forming a solid solution Zn{sub 1−x}Cu{sub x}O. For high Cu doping CuO phase is also present. For low Cu concentration the lattice shrinks due tomore » Cu atoms substitute Zn atoms. For high Cu concentration the lattice enlarges due to predominance of interstitial Cu. From elemental analysis we determined and analyzed the incorporation efficiency of Cu atoms in Zn{sub 1−x}Cu{sub x}O as a function of the Cu concentration in the precursor dissolution. Combining structural and chemical results we described the Cu/Zn precursor concentrations r{sub w} in which the solid solution of Cu in ZnO is predominant. In the region located at r{sub w} ≈ 0.2–0.3 it is no longer valid. For Cu/Zn precursor concentration r{sub w} > 0.3 interstitial Cu dominates, and some amount of copper oxide appears. As the Cu concentration increases, the effective size of nanoparticles decreases. Photoluminescence (PL) measurements of the Cu-doped ZnO nanoparticles were carried out and analyzed.« less

Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prajapati, C.S.; Kushwaha, Ajay; Sahay, P.P., E-mail: dr_ppsahay@rediffmail.com

2013-07-15

Graphical abstract: All the films are found to be polycrystalline ZnO possessing hexagonal wurtzite structure. The intensities of all the peaks are diminished strongly in the Fe-doped films, indicating their lower crystallinity as compared to the undoped ZnO film. The average crystallite size decreases from 35.21 nm (undoped sample) to 15.43 nm (1 at% Fe-doped sample). - Highlights: • Fe-doped ZnO films show smaller crystallinity with crystallite size: 15–26 nm. • Optical band gap in ZnO films decreases on Fe doping. • Fe-doped films exhibit the normal dispersion for the wavelength range 450–600 nm. • PL spectra of the Fe-dopedmore » films show quenching of the broad green-orange emission. • Acetone response of the Fe-doped films increases considerably at 300 °C. - Abstract: The ZnO thin films (undoped and Fe-doped) deposited by chemical spray pyrolysis technique have been analyzed by X-ray powder diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that all the films possess hexagonal wurtzite structure of zinc oxide having crystallite sizes in the range 15–36 nm. On 1 at% Fe doping, the surface roughness of the film increases which favors the adsorption of atmospheric oxygen on the film surface and thereby increase in the gas response. Optical studies reveal that the band gap decreases due to creation of some defect energy states below the conduction band edge, arising out of the lattice disorder in the doped films. The refractive index of the films decreases on Fe doping and follows the Cauchy relation of normal dispersion. Among all the films examined, the 1 at% Fe-doped film exhibits the maximum response (∼72%) at 300 °C for 100 ppm concentration of acetone in air.« less

Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

PubMed Central

Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

2015-01-01

Background Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications. PMID:25765728

Synthesis and Characterization of Doped ZnO Nanomaterials: Potential Application in Third Generation Solar Cells

NASA Astrophysics Data System (ADS)

Adcock Smith, Echo D.

ZnO nanomaterials are being incorporated into next-generation solar cell designs including dye-sensitized solar cells, multijunction solar cells, and quantum dot sensitized solar cells. ZnO nanorod (NR) arrays and nanoparticles (NP) used in these devices are typically fabricated using chemical vapor deposition and/or high-temperature reaction conditions. These methods are costly, require high energy, pressure or excessive time, but produce repeatable, defined growth that is capable of easily incorporating metal dopants. Less expensive methods of fabrication such as chemical bath deposition (CBD) eliminate the costly steps but can suffer from undefined growth, excessive waste and have a difficult time incorporating dopants into ZnO materials without additives or increased pH. This dissertation presents a novel method of growing cobalt and vanadium doped ZnO nanomaterials through microwave synthesis. The cobalt growth was compared to standard CBD and found to be faster, less wasteful, reproducible and better at incorporating cobalt ions into the ZnO lattice than typical oven CBD method. The vanadium doped ZnO microwave synthesis procedure was found to produce nanorods, nanorod arrays, and nanoparticles simultaneously. Neither the cobalt nor the vanadium growth required pH changes, catalysts or additives to assist in doping and therefore use less materials than traditional CBD. This research is important because it offers a simple, quick way to grow ZnO nanostructures and is the first to report on growing both cobalt and vanadium doped zinc oxide nanorod arrays using microwave synthesis. This synthesis method presented is a viable candidate for replacing conventional growth synthesis which will result in lowering the cost and time of production of photovoltaics while helping drive forward the development of next-generation solar cells.

Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

PubMed

Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

2013-05-07

We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

Influence of ZnO nanorod on the luminescent and electrical properties of fluorescent dye-doped polymer nanocomposite

NASA Astrophysics Data System (ADS)

Zhang, T.; Xu, Z.; Qian, L.; Tao, D. L.; Teng, F.; Xu, X. R.

2006-11-01

The luminescent properties of fluorescent dye-doped polymer dispersed with ZnO nanorods were investigated. Embedding ZnO nanorods in blend film results in a blue-shifted emission of fluorescent dye. It is accounted for in terms of the difference in permittivity between inorganic oxide nano-material and dye-doped polymer. Moreover, polymer light-emitting diodes with the addition of ZnO nanorods showed the lower threshold voltage and the higher charge current and electroluminescence efficiency.

High-quality ZnO growth, doping, and polarization effect

NASA Astrophysics Data System (ADS)

Kun, Tang; Shulin, Gu; Jiandong, Ye; Shunming, Zhu; Rong, Zhang; Youdou, Zheng

2016-03-01

The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk. Project supported by the National Natural Science Foundation of China (Nos. 61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province (Nos. BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

High-Performance Na-O2 Batteries Enabled by Oriented NaO2 Nanowires as Discharge Products.

PubMed

Khajehbashi, S Mohammad B; Xu, Lin; Zhang, Guobin; Tan, Shuangshuang; Zhao, Yan; Wang, Lai-Sen; Li, Jiantao; Luo, Wen; Peng, Dong-Liang; Mai, Liqiang

2018-06-13

Na-O 2 batteries are emerging rechargeable batteries due to their high theoretical energy density and abundant resources, but they suffer from sluggish kinetics due to the formation of large-size discharge products with cubic or irregular particle shapes. Here, we report the unique growth of discharge products of NaO 2 nanowires inside Na-O 2 batteries that significantly boosts the performance of Na-O 2 batteries. For this purpose, a high-spin Co 3 O 4 electrocatalyst was synthesized via the high-temperature oxidation of pure cobalt nanoparticles in an external magnetic field. The discharge products of NaO 2 nanowires are 10-20 nm in diameter and ∼10 μm in length, characteristics that provide facile pathways for electron and ion transfer. With these nanowires, Na-O 2 batteries have surpassed 400 cycles with a fixed capacity of 1000 mA h g -1 , an ultra-low over-potential of ∼60 mV during charging, and near-zero over-potential during discharging. This strategy not only provides a unique way to control the morphology of discharge products to achieve high-performance Na-O 2 batteries but also opens up the opportunity to explore growing nanowires in novel conditions.

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.

PubMed

Chen, Hung-Ling; Himwas, Chalermchai; Scaccabarozzi, Andrea; Rale, Pierre; Oehler, Fabrice; Lemaître, Aristide; Lombez, Laurent; Guillemoles, Jean-François; Tchernycheva, Maria; Harmand, Jean-Christophe; Cattoni, Andrea; Collin, Stéphane

2017-11-08

We present an effective method of determining the doping level in n-type III-V semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift to higher energy (Burstein-Moss shift) and the broadening of luminescence spectra are signatures of increased electron densities. They are compared to the CL spectra of calibrated Si-doped GaAs layers, whose doping levels are determined by Hall measurements. We apply the generalized Planck's law to fit the whole spectra, taking into account the electron occupation in the conduction band, the bandgap narrowing, and band tails. The electron Fermi levels are used to determine the free electron concentrations, and we infer nanowire doping of 6 × 10 17 to 1 × 10 18  cm -3 . These results show that cathodoluminescence provides a robust way to probe carrier concentrations in semiconductors with the possibility of mapping spatial inhomogeneities at the nanoscale.

Synthesis and characterization of single-phase Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

2009-05-01

Different samples of Zn 1-xMn xO series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation ( τ1) at defect site ( τ2) and average ( τav) increases with milling time.

Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method.

PubMed

Poongodi, G; Anandan, P; Kumar, R Mohan; Jayavel, R

2015-09-05

Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO. Copyright © 2015 Elsevier B.V. All rights reserved.

Study of defects and vacancies in structural properties of Mn, co-doped oxides: ZnO

NASA Astrophysics Data System (ADS)

Kumar, Harish; Kaushik, A.; Alvi, P. A.; Dalela, B.; Dalela, S.

2018-05-01

The paper deals with the Structural properties on Mn, Co doped oxides ZnO samples using XRD, Positron Annihilation Lifetime (PAL) Spectra and Raman Spectra. The Mn, Co doped ZnO samples crystallize in a wurtzite structure without any impurity phases in XRD Spectra. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique in which all the relevant lifetime parameters are measured for all the spectra. The results are explained in the direction of doping concentration in these samples in terms of defects structure on Zn lattice site VZn and oxygen defects Vo.

Effect of morphology evolution on the thermoelectric properties of oxidized ZnO thin films

NASA Astrophysics Data System (ADS)

Liu, Shiying; Li, Guojian; Xiao, Lin; Jia, Baohai; Gao, Yang; Wang, Qiang

2018-04-01

The effects of nanowire content on the thermoelectric properties of ZnO films were investigated. The nanowire content of ZnO films was tuned by thermal oxidation of evaporated Zn films. The results showed that hexagonal and polyhedral morphologies on the surface of Zn films can be used to tune the nanowire content of ZnO films. Hexagonal nanoplates with a diameter of 100-350 nm readily grew ZnO nanowires with c-axis preferential orientation. Conversely, it was difficult to grow nanowires on polyhedral nanoparticles with diameters of 500-750 nm because the meeting of ZnO (101) and (001) facets suppressed nanowire growth. Thermoelectric parameters were strongly affected by nanowire content. In particular, carrier concentration increased with nanowire content. Carrier mobility also increased with nanowire content because the nanowires behaved as channels for electronic migration. The band gap of the films narrowed with increasing nanowire content because the binding energy of O 1s electrons with oxygen vacancies decreased. The maximum power factor of the film with high nanowire content (8.80 μW/m K2 at 530 K) was approximately 300% higher than that of the film with low nanowire content.