Oxidant effect of La(NO3)3·6H2O solution on the crystalline characteristics of nanocrystalline ZrO2 films grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Oh, Nam Khen; Kim, Jin-Tae; Kang, Goru; An, Jong-Ki; Nam, Minwoo; Kim, So Yeon; Park, In-Sung; Yun, Ju-Young

2017-02-01

Nanocrystalline ZrO2 films were synthesized by atomic layer deposition method using CpZr[N(CH3)2]3 (Cp = C5H5) as the metal precursor and La(NO3)3·6H2O solution as the oxygen source. La element in the deposited ZrO2 films could not be detected as its content was below the resolution limit of the X-ray photoelectron spectroscopy. The alternative introduction of La(NO3)3·6H2O solution to conventionally used H2O as the oxidant effectively altered the crystalline structure, grain size, and surface roughness of the grown ZrO2 films. Specifically, the crystalline structure of the ZrO2 film changed from a mixture of tetragonal and monoclinic phases to monoclinic phase. The average grain size also increased, and the resulting film surface became rougher. The average grain sizes of the ZrO2 films prepared from La(NO3)3·6H2O solution at concentrations of 10, 20, 30, and 40% were 280, 256, 208, and 200 nm, respectively, whereas that prepared using H2O oxidant was 142 nm. However, the concentration of La(NO3)3·6H2O solution minimally influenced the crystalline characteristics of the nanocrystalline ZrO2 films i.e., the crystalline structure, grain size, and surface roughness except for crystallite size.

Enhance the photoluminescence and radioluminescence of La2Zr2O7:Eu3+ core nanoparticles by coating with a thin Y2O3 shell

NASA Astrophysics Data System (ADS)

Pokhrel, Madhab; Burger, Arnold; Groza, Michael; Mao, Yuanbing

2017-06-01

We report the generation of La2Zr2O7:5%Eu3+@Y2O3 (LZO5E@YO) core@shell crystalline inorganic-inorganic heterogeneous nanoparticles (NPs). The Y2O3 (YO) shell coating process based on a chemical sol-gel method led to the growth of a thin YO shell on the ordered pyrochlore La2Zr2O7:5%Eu3+ (LZO5E) core NPs. Photoluminescence (PL) analyses demonstrated a blue shift of 15 nm on charge transfer (CT) excitation band of the core@shell NPs from that of the core NPs. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) along x-ray diffraction (XRD), Fourier-transform Infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) studies confirmed the formation of the thin YO layer over the LZO5E core NPs. The PL intensity of the LZO5E@YO core@shell NPs was enhanced by three fold compared to that of the LZO5E core NPs, and higher quantum yield (QY) was observed for the former compared to the original NPs by more than 70%. Higher radioluminescence (RL) emission was also observed for the core@shell NPs compared to the core NPs. Our ability of obtaining near-perfect core@shell heterostructure with enhanced luminescence performance opens the door for the development of efficient La2Zr2O7:5%Eu3+@Y2O3 NPs for both optical and x-ray scintillation applications.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

PubMed

Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

2015-03-04

A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

[Study on anti-coagulant property of radio frequency sputtering nano-sized TiO2 thin films].

PubMed

Tang, Xiaoshan; Li, Da

2010-12-01

Nano-TiO2 thin films were prepared by Radio frequency (RF) sputtering on pyrolytic carbon substrates. The influences of sputtering power on the structure and the surface morphology of TiO2 thin films were investigated by X-ray diffraction (XRD), and by scanning electron microscopy (SEM). The results show that the TiO2 films change to anatase through the optimum of sputtering power. The mean diameter of nano-particle is about 30 nm. The anti-coagulant property of TiO2 thin films was observed through platelet adhesion in vitro. The result of experiment reveals the amount of thrombus on the TiO2 thin films being much less than that on the pyrolytic carbon. It also indicates that the RF sputtering Nano-sized TiO2 thin films will be a new kind of promising materials applied to artificial heart valve and endovascular stent.

Bioactivity and cytocompatibility of zirconia (ZrO(2)) films fabricated by cathodic arc deposition.

PubMed

Liu, Xuanyong; Huang, Anping; Ding, Chuanxian; Chu, Paul K

2006-07-01

Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed by investigating the formation of apatite on the film surface after soaking in simulated body fluids. Bone marrow mesenchymal stem cells (BMMSC) were used to further evaluate the cytocompatibility of the materials. The results indicate that the films are composed of stoichiometric ZrO(2) and the composition is quite uniform throughout the thickness. Bone-like apatite can be formed on the surface of the ZrO(2) thin film in our SBF immersion experiments, suggesting that the surface is bioactive. The outermost layer of the ZrO(2) thin film comprises nano-sized particles that can be identified by AFM images taken on the thin film surface and TEM micrographs obtained from the interface between the ZrO(2) thin film and apatite layer. The nanostructured surface is believed to be the key factor that apatite is induced to precipitate on the surface. Bone marrow mesenchymal stem cells are observed to grow and proliferate in good states on the film surface. Our results show that ZrO(2) thin films fabricated by cathodic arc deposition exhibit favorable bioactivity and cytocompatibility.

Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garratt, Elias; AlFaify, Salem; Yoshitake, T.

2013-01-11

This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphiticmore » phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.« less

Effect of chromium underlayer on the properties of nano-crystalline diamond films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Yoshitake, T.; Katamune, Y.; Bowden, M.; Nandasiri, M.; Ghantasala, M.; Mancini, D. C.; Thevuthasan, S.; Kayani, A.

2013-01-01

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

Investigation of phase transition properties of ZrO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

2018-05-01

This paper presents the synthesis of transparent thin films of zirconium oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Synthesized films were characterized for different annealing time and withdrawal speed. Change in crystallographic properties of thin films was investigated by using X-ray diffraction. Surface morphology of transparent thin films was estimated by using scanning electron microscope.

Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

NASA Astrophysics Data System (ADS)

Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

2018-05-01

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

Structural and morphological study of ZrO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

2018-05-01

In this paper we discuss the fabrication of transparent thin films of Zirconium Oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Further these fabricated films were characterized for different annealing temperatures and withdrawal speed. X-ray diffraction is used to study the structural properties of deposited thin films and it reveals the change in crystallographic properties with the change in annealing temperature. Thickness of thin films is estimated by using scanning electron microscope.

(Zr,Ti)O2 interface structure in ZrO2-TiO2 nanolaminates with ultrathin periodicity

NASA Astrophysics Data System (ADS)

Aita, C. R.; DeLoach, J. D.; Yakovlev, V. V.

2002-07-01

A mixed cation interfacial structure in ZrO2-TiO2 nanolaminate films with ultrathin bilayer periodicity grown by sputter deposition at 297 K was identified by x-ray diffraction and nonresonant Raman spectroscopy. This structure consists of an amorphous phase at a ZrO2-on-TiO2 bilayer interface, followed by an extensive crystalline monoclinic (Zr,Ti)O2 solid solution predicted by Vegard's law. Monoclinic (Zr,Ti)O2 has previously been reported only once, in bulk powder of a single composition (ZrTiO4) at high pressure. Its stabilization in the nanolaminates is explained by the Gibbs-Thomson effect. This complex interfacial structure is shown to be a means of accommodating chemical mixing in the absence of a driving force for heteroepitaxy.

Thermal conductivity of ZrO2-4mol%Y2O3 thin coatings by pulsed thermal imaging method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Byung-Koog; Sun, Jiangang; Kim, Seongwon

Thin ZrO2-4mol% Y2O3 coatings were deposited onto ZrO2 substrates by electron beam-physical vapor deposition. The coated samples revealed a feather-like columnar microstructure. The main phase of the ZrO2-4mol% Y2O3 coatings was the tetragonal phase. To evaluate the influence of the coating’s thickness on the thermal conductivity of thin ZrO2-4mol% Y2O3 coatings, the pulsed thermal imaging method was employed to obtain the thermal conductivity of the coating layer in the two-layer (coating and substrate) samples with thickness between 56 and 337 micrometers. The thermal conductivity of the coating layer was successfully evaluated and compared well with those obtained by the lasermore » flash method for similar coatings. The thermal conductivity of coatings shows an increasing tendency with an increase in the coating’s thickness.« less

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

PubMed Central

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-01-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

NASA Astrophysics Data System (ADS)

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-05-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiraishi, Takahisa; Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577; Katayama, Kiliha

2016-06-27

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phasemore » was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.« less

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

DOE PAGES

Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; ...

2017-02-17

We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB 2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting tomore » the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.« less

Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

NASA Astrophysics Data System (ADS)

Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

2014-01-01

Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

Characterization of Localized Filament Corrosion Products at the Anodic Head on a Model Mg-Zn-Zr Alloy Surface

DOE PAGES

Rossouw, David; Fu, Dong; Leonard, Donovan N.; ...

2017-02-15

In this study, localized filament corrosion products at the anodic head on a model Mg-1%Zn-0.4%Zr alloy surface were characterized by electron microscopy techniques of site-specific lamella prepared by focused ion beam milling. It is revealed that the anodic head propagates underneath a largely intact thin and dense MgO surface film and comprises dense aggregates of nano-crystalline MgO within a nano-porous Mg(OH) 2 network. In conclusion, the findings contribute new supportive direct imaging insight into the source of the enhanced H 2 evolution that accompanies anodic dissolution of Mg and its alloys.

Characterization of Localized Filament Corrosion Products at the Anodic Head on a Model Mg-Zn-Zr Alloy Surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rossouw, David; Fu, Dong; Leonard, Donovan N.

In this study, localized filament corrosion products at the anodic head on a model Mg-1%Zn-0.4%Zr alloy surface were characterized by electron microscopy techniques of site-specific lamella prepared by focused ion beam milling. It is revealed that the anodic head propagates underneath a largely intact thin and dense MgO surface film and comprises dense aggregates of nano-crystalline MgO within a nano-porous Mg(OH) 2 network. In conclusion, the findings contribute new supportive direct imaging insight into the source of the enhanced H 2 evolution that accompanies anodic dissolution of Mg and its alloys.

Microstructural and mechanical properties of Al2O3/ZrO2 nanomultilayer thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Balakrishnan, G.; Sastikumar, D.; Kuppusami, P.; Babu, R. Venkatesh; Song, Jung Il

2018-02-01

Single layer aluminium oxide (Al2O3), zirconium oxide (ZrO2) and Al2O3/ZrO2 nano multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser deposition. The development of Al2O3/ZrO2 nanolayered structure is an important method used to stabilize the high temperature phase (tetragonal and cubic) of ZrO2 at room temperature. In the Al2O3/ZrO2 multilayer structure, the Al2O3 layer was kept constant at 5 nm, while the ZrO2 layer thickness varied from 5 to 20 nm (5/5, 5/10, 5/15 and 5/20 nm) with a total of 40 bilayers. The X-ray diffraction studies of single layer Al2O3 indicated the γ-Al2O3 of cubic structure, while the single layer ZrO2 indicated both monoclinic and tetragonal phases. The 5/5 and 5/10 nm multilayer films showed the nanocrystalline nature of ZrO2 with tetragonal phase. The high resolution transmission electron microscopy studies indicated the formation of well-defined Al2O3 and ZrO2 layers and that they are of uniform thickness. The atomic force microscopy studies revealed the uniform and dense distribution of nanocrystallites. The nanoindentation studies indicated the hardness of 20.8 ± 1.10 and 10 ± 0.60 GPa, for single layer Al2O3 and ZrO2, respectively, and the hardness of multilayer films varied with bilayer thickness.

Selenidation of epitaxial silicene on ZrB2

NASA Astrophysics Data System (ADS)

Wiggers, F. B.; Yamada-Takamura, Y.; Kovalgin, A. Y.; de Jong, M. P.

2018-01-01

The deposition of elemental Se on epitaxial silicene on ZrB2 thin films was investigated with synchrotron-based core-level photoelectron spectroscopy and low-energy electron diffraction. The deposition of Se at room temperature caused the appearance of Si 2p peaks with chemical shifts of n × 0.51 ± 0.04 eV (n = 1-4), suggesting the formation of SiSe2. This shows that capping the silicene monolayer, without affecting its structural and electronic properties, is not possible with Se. The annealing treatments that followed caused the desorption of Se and Si, resulting in the etching of the Si atoms formerly part of the silicene layer, and the formation of bare ZrB2(0001) surface area. In addition, a ZrB2(0001)-(√7 × 3)R40.9° surface reconstruction was observed, attributed to a Se-termination of the surface of the transition metal diboride thin film.

Effect of molarity on sol-gel routed nano TiO2 thin films

NASA Astrophysics Data System (ADS)

Lourduraj, Stephen; Williams, Rayar Victor

The nanostructured titanium dioxide (TiO2) thin films have been prepared for the molar concentrations of titanium tetra isopropoxide (TTIP) 0.05M, 0.1M, 0.15M and 0.2M by sol-gel routed spin coating technique with calcination at 450∘C. The processing parameters such as, pH value (8), catalyst HCl (0.1ml), spin speed (3000rpm) and calcination temperature (450∘C) are optimized. The crystalline nature and surface morphology were analyzed by XRD, SEM and AFM analysis. The XRD results confirm that the films are crystalline with anatase phase, and are nanostructured. The SEM micrographs of the TiO2 film reveal the spherical nature of the particle. AFM analysis establishes that the uniformity of the TiO2 thin film was optimized at 0.2M. The optical measurements show that the transmittance depends on the molarity, and the optical band gap energy of TiO2 films is found to be inversely proportional to molarity. The I-V characteristics exhibit that the molarity strongly influences the electrical conductivity of the film. The results indicate that the significant effect of molarity on structural, optical and electrical properties of the nanostructured TiO2 thin films will be useful to photovoltaic application.

Influence of incorporation of ZrO2 nanoparticles on the repair strength of polymethyl methacrylate denture bases

PubMed Central

Gad, Mohammed M; Rahoma, Ahmed; Al-Thobity, Ahmad M; ArRejaie, Aws S

2016-01-01

Background Repeated fracture of the denture base is a common problem in prosthodontics, and it represents a nuisance and a time sink for the clinician. Therefore, the possibility of increasing repair strength using new reinforcement materials is of great interest to prosthodontists. Aim of the study This study aimed to evaluate the effects of incorporation of zirconia nanoparticles (nano-ZrO2) on the flexural strength and impact strength of repaired polymethyl methacrylate (PMMA) denture bases. Materials and methods One hundred eighty specimens of heat-polymerized acrylic resin were fabricated (90 for each test) and divided into three main groups: one control group (intact specimens) and two groups divided according to surface design (45° bevels and butt joints), in which specimens were prepared in pairs to create 2.5 mm gaps. Nano-ZrO2 was added to repair resin in 2.5 wt%, 5 wt%, and 7.5 wt% concentrations of acrylic powder. A three-point bending test was used to measure flexural strength, and a Charpy-type test was used to measure impact strength. Scanning electron microscopy was used to analyze the fracture surfaces and nano-ZrO2 distribution. The results were analyzed with a paired sample t-test and an unpaired t-test, with a P-value of ≤0.05 being significant. Results Incorporation of nano-ZrO2 into the repair resin significantly increased flexural strength (P<0.05). The highest value was found in the bevel group reinforced with 7.5% nano-ZrO2, whereas the lowest value was found in the butt group reinforced with 2.5% nano-ZrO2. The impact strength values of all repaired groups were significantly lower than those of the control group (P<0.05). Among repaired groups, the higher impact strength value was seen in the butt group reinforced with 2.5% nano-ZrO2. The bevel joint demonstrated mainly cohesive failure, whereas the butt joint demonstrated mainly adhesive failure. Conclusion Incorporation of nano-ZrO2 into the repair resin improved the flexural strength

Optical enhancement of Au doped ZrO2 thin films by sol-gel dip coating method

NASA Astrophysics Data System (ADS)

John Berlin, I.; Joy, K.

2015-01-01

Homogeneous and transparent Au doped ZrO2 thin films were prepared by sol-gel dip coating method. The films have mixed phase of tetragonal, monoclinic and face centered cubic with crack free surface. Due to the increase in Au doping concentration many-body interaction occurs between free carriers and ionized impurities causing decrease in optical band gap from 5.72 to 5.40 eV. Localized surface plasmon resonance peak of the Au doped films appeared at 610 nm. Conversion of photons to surface plasmons allows the sub-wavelength manipulation of electromagnetic radiation. Hence the prepared Au doped ZrO2 thin films can be applied in nanoscale photonic devices such as lenses, switches, waveguides etc. Moreover the photoluminescence (PL) intensity of Au doped ZrO2 thin films decrease due to decrease in the radiative recombination, life time of the excitons and suppression of grain growth of ZrO2 with increasing Au dopant.

Fine-grained BaZr0.2Ti0.8O3 thin films for tunable device applications

NASA Astrophysics Data System (ADS)

Ying, Z.; Yun, P.; Wang, D. Y.; Zhou, X. Y.; Song, Z. T.; Feng, S. L.; Wang, Y.; Chan, H. L. W.

2007-04-01

A study of the structure and in-plane dielectric properties of BaZr0.2Ti0.8O3 thin film epitaxially grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) single-crystal substrates through pulsed-laser deposition has been carried out. X-ray diffraction measurements revealed a good crystallinity and tensile in-plane stress in the film. Fine grains with an average size of ˜20 nm were observed using atomic force microscopy. Curie temperature of the film was found to be ˜120 °C, which is 100 °C higher than that of the ceramic. Butterfly-shaped C-V curve confirmed the in-plane ferroelectric state in the film. A large dielectric tunability of ˜50% was found in the film.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

ZrO{sub 2}-ZnO composite thin films for humidity sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C.

2016-05-23

ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

Local electrical characterization of laser-recorded phase-change marks on amorphous Ge2Sb2Te5 thin films.

PubMed

Chang, Chia Min; Chu, Cheng Hung; Tseng, Ming Lun; Chiang, Hai-Pang; Mansuripur, Masud; Tsai, Din Ping

2011-05-09

Amorphous thin films of Ge(2)Sb(2)Te(5), sputter-deposited on a thin-film gold electrode, are investigated for the purpose of understanding the local electrical conductivity of recorded marks under the influence of focused laser beam. Being amorphous, the as-deposited chalcogenide films have negligible electrical conductivity. With the aid of a focused laser beam, however, we have written on these films micron-sized crystalline marks, ablated holes surrounded by crystalline rings, and other multi-ring structures containing both amorphous and crystalline zones. Within these structures, nano-scale regions of superior local conductivity have been mapped and probed using our high-resolution, high-sensitivity conductive-tip atomic force microscope (C-AFM). Scanning electron microscopy and energy-dispersive spectrometry have also been used to clarify the origins of high conductivity in and around the recorded marks. When the Ge(2)Sb(2)Te(5) layer is sufficiently thin, and when laser crystallization/ablation is used to define long isolated crystalline stripes on the samples, we find the C-AFM-based method of extracting information from the recorded marks to be superior to other forms of microscopy for this particular class of materials. Given the tremendous potential of chalcogenides as the leading media candidates for high-density memories, local electrical characterization of marks recorded on as-deposited amorphous Ge(2)Sb(2)Te(5) films provides useful information for furthering research and development efforts in this important area of modern technology. © 2011 Optical Society of America

Extremely fine structured cathode for solid oxide fuel cells using Sr-doped LaMnO3 and Y2O3-stabilized ZrO2 nano-composite powder synthesized by spray pyrolysis

NASA Astrophysics Data System (ADS)

Shimada, Hiroyuki; Yamaguchi, Toshiaki; Sumi, Hirofumi; Nomura, Katsuhiro; Yamaguchi, Yuki; Fujishiro, Yoshinobu

2017-02-01

A solid oxide fuel cell (SOFC) for high power density operation was developed with a microstructure-controlled cathode using a nano-composite powder of Sr-doped LaMnO3 (LSM) and Y2O3-stabilized ZrO2 (YSZ) synthesized by spray pyrolysis. The individual LSM-YSZ nano-composite particles, formed by crystalline and amorphous nano-size LSM and YSZ particles, showed spherical morphology with uniform particle size. The use of this powder for cathode material led to an extremely fine microstructure, in which all the LSM and YSZ grains (approximately 100-200 nm) were highly dispersed and formed their own network structures. This microstructure was due to the two phase electrode structure control using the powder, namely, nano-order level in each particle and micro-order level between particles. An anode-supported SOFC with the LSM-YSZ cathode using humidified H2 as fuel and ambient air as oxidant exhibited high power densities, such as 1.29 W cm-2 under a voltage of 0.75 V and a maximum power density of 2.65 W cm-2 at 800 °C. Also, the SOFC could be stably operated for 250 h with no degradation, even at a high temperature of 800 °C.

Critical size of crystalline ZrO(2) nanoparticles synthesized in near- and supercritical water and supercritical isopropyl alcohol.

PubMed

Becker, Jacob; Hald, Peter; Bremholm, Martin; Pedersen, Jan S; Chevallier, Jacques; Iversen, Steen B; Iversen, Bo B

2008-05-01

Nanocrystalline ZrO(2) samples with narrow size distributions and mean particle sizes below 10 nm have been synthesized in a continuous flow reactor in near and supercritical water as well as supercritical isopropyl alcohol using a wide range of temperatures, pressures, concentrations and precursors. The samples were comprehensively characterized by powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), and small-angle X-ray scattering (SAXS), and the influence of the synthesis parameters on the particle size, particle size distribution, shape, aggregation and crystallinity was studied. On the basis of the choice of synthesis parameters either monoclinic or tetragonal zirconia phases can be obtained. The results suggest a critical particle size of 5-6 nm for nanocrystalline monoclinic ZrO(2) under the present conditions, which is smaller than estimates reported in the literature. Thus, very small monoclinic ZrO(2) particles can be obtained using a continuous flow reactor. This is an important result with respect to improvement of the catalytic properties of nanocrystalline ZrO(2).

Inflammatory cell response to ultra-thin amorphous and crystalline hydroxyapatite surfaces.

PubMed

Rydén, Louise; Omar, Omar; Johansson, Anna; Jimbo, Ryo; Palmquist, Anders; Thomsen, Peter

2017-01-01

It has been suggested that surface modification with a thin hydroxyapatite (HA) coating enhances the osseointegration of titanium implants. However, there is insufficient information about the biological processes involved in the HA-induced response. This study aimed to investigate the inflammatory cell response to titanium implants with either amorphous or crystalline thin HA. Human mononuclear cells were cultured on titanium discs with a machined surface or with a thin, 0.1 μm, amorphous or crystalline HA coating. Cells were cultured for 24 and 96 h, with and without lipopolysaccharide (LPS) stimulation. The surfaces were characterized with respect to chemistry, phase composition, wettability and topography. Biological analyses included the percentage of implant-adherent cells and the secretion of pro-inflammatory cytokine (TNF-α) and growth factors (BMP-2 and TGF-β1). Crystalline HA revealed a smooth surface, whereas the amorphous HA displayed a porous structure, at nano-scale, and a hydrophobic surface. Higher TNF-α secretion and a higher ratio of adherent cells were demonstrated for the amorphous HA compared with the crystalline HA. TGF-β1 secretion was detected in all groups, but without any difference. No BMP-2 secretion was detected in any of the groups. The addition of LPS resulted in a significant increase in TNF-α in all groups, whereas TGF-β1 was not affected. Taken together, the results show that thin HA coatings with similar micro-roughness but a different phase composition, nano-scale roughness and wettability are associated with different monocyte responses. In the absence of strong inflammatory stimuli, crystalline hydroxyapatite elicits a lower inflammatory response compared with amorphous hydroxyapatite.

Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serrao, Claudy R.; You, Long; Gadgil, Sushant

2015-02-02

Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.

PubMed

Hwang, Soo Min; Lee, Seung Muk; Choi, Jun Hyuk; Lim, Jun Hyung; Joo, Jinho

2013-11-01

We fabricated InSnZnO (ITZO) thin-film transistors (TFTs) with a high-permittivity (K) ZrO2 gate insulator using a solution process and explored the microstructure and electrical properties. ZrO2 and ITZO (In:Sn:Zn = 2:1:1) precursor solutions were deposited using consecutive spin-coating and drying steps on highly doped p-type Si substrate, followed by annealing at 700 degrees C in ambient air. The ITZO/ZrO2 TFT device showed n-channel depletion mode characteristics, and it possessed a high saturation mobility of approximately 9.8 cm2/V x s, a small subthreshold voltage swing of approximately 2.3 V/decade, and a negative V(TH) of approximately 1.5 V, but a relatively low on/off current ratio of approximately 10(-3). These results were thought to be due to the use of the high-kappa crystallized ZrO2 dielectric (kappa approximately 21.8) as the gate insulator, which could permit low-voltage operation of the solution-processed ITZO TFT devices for applications to high-throughput, low-cost, flexible and transparent electronics.

Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

2018-03-01

We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho

2016-01-15

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solidmore » oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.« less

Annealing Behavior of 57Fe Implanted in ZrO2(Y)

NASA Astrophysics Data System (ADS)

Zhang, G. L.; Yu, F. H.; Weng, H. M.; Zhang, H. H.

1998-12-01

Using conversion electron Mossbauer spectroscopy(CEMS) and slow positron beam, the chemical states of the implanted 57Fe (100KeV,3 × 10 16 ions/cm 2) in ZrO2 containing 3 mol% Y 2O 3( ZY 3) and its thermodynamic behavior during annealing process with the temperature from 200 to 500°C were studied. After annealing at 400°C the complex of Fe3+-V has been mostly dissolved, and the prior phase to α-Fe and α-Fe nano-crystalline cluster were present in the sample. Meanwhile the mixed conducting of oxygen-ions and electrons in the ZY3 containing Fe sample appeared.

Characterization of ZrO2 and (ZrO2)x(Al2O3)1-X thin films on Si substrates: effect of the Al2O3 component

NASA Astrophysics Data System (ADS)

Vitanov, P.; Harizanova, A.; Ivanova, T.

2014-05-01

ZrO2 and (ZrO2)x(Al2O3)1-x films were deposited by the sol-gel technique on Si substrates. The effect of the Al2O3 additive on the film surface morphology was studied by atomic force microscopy (AFM). The mixed oxide films showed a smoother morphology and lower values of the root-mean-square (RMS) roughness compared to ZrO2. Further, FTIR spectra indicated that ZrO2 underwent crystallization. The electrical measurements of the MIS structure revealed that the presence of Al2O3 and the amorphization affects its dielectric properties. The MIS structure with (ZrO2)x(Al2O3)1-x showed a lower fixed charge (~ 6×1010 cm-2) and an interface state density in the middle of the band gap of 6×1011 eV-1 cm-2). The dielectric constant measured was 22, with the leakage current density decreasing to 2×10-8 A cm-2 at 1×106 V cm-1.

Depth profiling of nitrogen within 15N-incorporated nano-crystalline diamond thin films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Cassidy, D. P.; Dissanayake, A.; Mancini, D. C.; Ghantasala, M. K.; Kayani, A.

2013-09-01

Nano-Crystalline Diamond (NCD) thin films are a topic of recent interest due to their excellent mechanical and electrical properties. The inclusion of nitrogen is a specific interest as its presence within NCD modifies its conductive properties. The methodology adopted for the characterization of nitrogen incorporated NCD films grown on a chromium underlayer determined a correlation between the chromium and nitrogen concentrations as well as a variation in the concentration profile of elements. Additionally, the concentration of nitrogen was found to be more than three times greater for these films versus those grown on a silicon substrate.

Fabrication and Properties of Plasma-Sprayed Al2O3/ZrO2 Composite Coatings

NASA Astrophysics Data System (ADS)

Dejang, N.; Limpichaipanit, A.; Watcharapasorn, A.; Wirojanupatump, S.; Niranatlumpong, P.; Jiansirisomboon, S.

2011-12-01

Al2O3 /xZrO2 (where x = 0, 3, 13, and 20 wt.%) composite coatings were deposited onto mild steel substrates by atmospheric plasma spraying of mixed α-Al2O3 and nano-sized monoclinic-ZrO2 powders. Microstructural investigation showed that the coatings comprised well-separated Al2O3 and ZrO2 lamellae, pores, and partially molten particles. The coating comprised mainly of metastable γ-Al2O3 and tetragonal-ZrO2 with trace of original α-Al2O3 and monoclinic-ZrO2 phases. The effect of ZrO2 addition on the properties of coatings were investigated in terms of microhardness, fracture toughness, and wear behavior. It was found that ZrO2 improved the fracture toughness, reduced friction coefficient, and wear rate of the coatings.

Effect of SiO 2-ZrO 2 supports prepared by a grafting method on hydrogen production by steam reforming of liquefied natural gas over Ni/SiO 2-ZrO 2 catalysts

NASA Astrophysics Data System (ADS)

Seo, Jeong Gil; Youn, Min Hye; Song, In Kyu

SiO 2-ZrO 2 supports with various zirconium contents are prepared by grafting a zirconium precursor onto the surface of commercial Carbosil silica. Ni(20 wt.%)/SiO 2-ZrO 2 catalysts are then prepared by an impregnation method, and are applied to hydrogen production by steam reforming of liquefied natural gas (LNG). The effect of SiO 2-ZrO 2 supports on the performance of the Ni(20 wt.%)/SiO 2-ZrO 2 catalysts is investigated. SiO 2-ZrO 2 prepared by a grafting method serves as an efficient support for the nickel catalyst in the steam reforming of LNG. Zirconia enhances the resistance of silica to steam significantly and increases the interaction between nickel and the support, and furthermore, prevents the growth of nickel oxide species during the calcination process through the formation of a ZrO 2-SiO 2 composite structure. The crystalline structures and catalytic activities of the Ni(20 wt.%)/SiO 2-ZrO 2 catalysts are strongly influenced by the amount of zirconium grafted. The conversion of LNG and the yield of hydrogen show volcano-shaped curves with respect to zirconium content. Among the catalysts tested, the Ni(20 wt.%)/SiO 2-ZrO 2 (Zr/Si = 0.54) sample shows the best catalytic performance in terms of both LNG conversion and hydrogen yield. The well-developed and pure tetragonal phase of ZrO 2-SiO 2 (Zr/Si = 0.54) appears to play an important role in the adsorption of steam and subsequent spillover of steam from the support to the active nickel. The small particle size of the metallic nickel in the Ni(20 wt.%)/SiO 2-ZrO 2 (Zr/Si = 0.54) catalyst is also responsible for its high performance.

Effect of zirconia morphology on sulfur-resistant methanation performance of MoO3/ZrO2 catalyst

NASA Astrophysics Data System (ADS)

Liu, Chen; Wang, Weihan; Xu, Yan; Li, Zhenhua; Wang, Baowei; Ma, Xinbin

2018-05-01

Two kinds of ZrO2 support with different morphologies were prepared by facile solvothermal method in different solvents. The obtained two supports showed monoclinic zirconia (m-ZrO2) and tetragonal zirconia (t-ZrO2) phase with similar crystalline size. Their supported Mo-based catalysts were prepared by impregnation method and the effect of zirconia morphology on the performance of sulfur-resistant methanation was examined. The results indicated that the MoO3/m-ZrO2 has higher CO conversion than the MoO3/t-ZrO2 catalyst. Characterizations by XRD, Raman, H2-TPR and IR confirmed that the m-ZrO2 is superior to t-ZrO2 for dispersing molybdenum species. In addition, the MoO3/m-ZrO2 catalyst has weaker interaction between support and active Mo speices than the MoO3/t-ZrO2 catalyst, which facilitates to forming active species of nanocrystalline MoS2 layers for sulfur-resistant methanation. The weaker interaction of molybdenum species with m-ZrO2 is related with the more covalent character of the Zrsbnd O bond and more oxygen defective structure of m-ZrO2. A larger number of Lewis acid centers appear on the surface of m-ZrO2, which verified the substantial vacancies on m-ZrO2 exposing coordinately unsaturated Zr3+ and Zr4+ cations. Meanwhile, the less Lewis acid of t-ZrO2 result in stronger interaction between support and molybdenum species and trigger crystalline phase MoO3 and Mosbnd Osbnd Zr linkages.

Arsenic Sorption on TiO2 Nanoparticles: Size And Crystallinity Effects

EPA Science Inventory

Single solute As (III) and As (V) sorption on nano-sized amorphous and crystalline TiO₂ was investigated to determine: size and crystallinity effects on arsenic sorption capacities, possible As (III) oxidation, and the nature of surface complexes. Amorphous and cryst...

Structural effects due to the incorporation of Ar atoms in the lattice of ZrO 2 thin films prepared by ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Holgado, J. P.; Escobar Galindo, R.; van Veen, A.; Schut, H.; de Hosson, J. Th. M.; González-Elipe, A. R.

2002-09-01

Two sets of ZrO 2 thin films have been prepared at room temperature by ion beam induced chemical vapour deposition and subsequently annealed up to 1323 K. The two sets of samples have been prepared by using either O 2+ or mixtures of (O 2++Ar +) ions for the decomposition of a volatile metallorganic precursor of zirconium. The structure and microstructure of these two sets of samples have been determined by means of X-ray diffraction, Fourier transform infrared spectroscopy and positron beam analysis (PBA). The samples were very compact and dense and had a very low-surface roughness. After annealing in air at T⩾573 K both sets of films were transparent and showed similar refraction indexes. For the (O 2++Ar +)-ZrO 2 thin films it is shown by X-ray photoelectron spectroscopy and Rutherford back scattering that a certain amount of incorporated Ar (5-6 at.%) remains incorporated within the oxide lattice. No changes were detected in the amount of incorporated Ar even after annealing at T=773 K. For higher annealing temperatures ( T>1073 K), the amount of Ar starts to decrease, and at T=1223 K only residual amounts of Ar (<0.4%) remain within the lattice. It has been found that as far as Ar atoms remain incorporated within the ZrO 2 network, the (O 2+-Ar +)-ZrO 2 films present a cubic/tetragonal phase. When the amount of "embedded" Ar decreases, the crystalline phase reverts to monoclinic, the majority phase observed for the (O 2+)-ZrO 2 films after any annealing treatments. The microstructure of the films after different annealing treatments has been investigated by PBA. The presence of Ar ions and the initial amorphous state of the layers were detected by this technique. An increase of the open volume was observed after annealing up to 773 K in both sets of samples. For higher annealing temperatures the samples showed a progressive crystallisation resulting in a decrease of the open volume. During this sintering the samples without embedded Ar present a higher

Effects of interfacial layer on characteristics of TiN/ZrO2 structures.

PubMed

Kim, Younsoo; Kang, Sang Yeol; Choi, Jae Hyoung; Lim, Jae Soon; Park, Min Young; Chung, Suk-Jin; Chung, Jaegwan; Lee, Hyung Ik; Kim, Ki Hong; Kyoung, Yong Koo; Heo, Sung; Yoo, Cha Young; Kang, Ho-Kyu

2011-09-01

To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN layer was thermally deposited using TEMAZ without any reactant. Electrical characteristics of TiN/ZrO2/TiN capacitor were improved by insertion of ZrCN layer. The oxidation of TiN bottom electrode was largely inhibited at TiN/ZrCN/ZrO2 structure compared to TiN/ZrO2 structure. While the sheet resistance of TiN/ZrCN/ZrO2 structure was constantly sustained with increasing ZrO2 thickness, the large increase of sheet resistance was observed in TiN/ZrO2 structure after 6 nm ZrO2 deposition. When ZrO2 films were deposited on ZrCN layer, the deposition rate of ZrO2 also increased. It is believed that ZrCN layer acted both as a protection layer of TiN oxidation and a seed layer of ZrO2 growth.

The effect of B 2O 3 addition on the crystallization of amorphous TiO 2-ZrO 2 mixed oxide

NASA Astrophysics Data System (ADS)

Mao, Dongsen; Lu, Guanzhong

2007-02-01

The effect of B 2O 3 addition on the crystallization of amorphous TiO 2-ZrO 2 mixed oxide was investigated by X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG/DTA). TiO 2-ZrO 2 mixed oxide was prepared by co-precipitation method with aqueous ammonia as the precipitation reagent. Boric acid was used as a source of boria, and boria contents varied from 2 to 20 wt%. The results indicate that the addition of small amount of boria (<8 wt%) hinders the crystallization of amorphous TiO 2-ZrO 2 into a crystalline ZrTiO 4 compound, while a larger amount of boria (⩾8 wt%) promotes the crystallization process. FT-IR spectroscopy and 11B MAS NMR results show that tetrahedral borate species predominate at low boria loading, and trigonal borate species increase with increasing boria loading. Thus it is concluded that highly dispersed tetrahedral BO 4 units delay, while a build-up of trigonal BO 3 promote, the crystallization of amorphous TiO 2-ZrO 2 to form ZrTiO 4 crystals.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

NASA Astrophysics Data System (ADS)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

Formation of crystalline phase in the glass matrix of Zr-Co-Al glass-matrix composites and its effect on their mechanical properties

NASA Astrophysics Data System (ADS)

Kim, Woo Chul; Kim, Kang Chul; Na, Min Young; Jeong, Seok Hoan; Kim, Won Tae; Kim, Do Hyang

2017-11-01

The microstructural evolution and mechanical properties of Zr-Co-Al alloys, with compositions of (Zr50Co50)x (Zr56Co26Al18)1-x (x = 1/6, 2/6, 3/6, 4/6, 5/6, 1) and Zr54Co35Al11, (referred to as Z1, Z2, Z3, Z4, Z5, Z6, and Z4.5), were investigated. Alloys Z1-Z3 consisted of crystalline phases, while alloys Z4 and Z4.5 consisted of crystalline phase particles ( 3 vol% and 35 vol%, respectively) embedded within the glassy matrix. Alloys Z5 and Z6 consisted of a monolithic glass phase. The crystalline phase of alloys Z1-Z4.5 consisted of primary B2-ZrCo dendrite and an interdendritic B2-ZrCo/Zr6CoAl2 eutectic phase. The B2-ZrCo dendritic phase exhibited a high work-hardening rate, which originated from the deformation-induced B2-to-B33 martensitic transformation. However, when the brittle interdendritic B2-ZrCo/Zr6CoAl2 eutectic phase fraction increased, the work-hardening rate significantly decreased. The ductility of the glass-matrix composites was significantly impaired by the presence of the interdendritic eutectic phase in the crystalline phase. The results indicate that the design of the crystalline particle microstructure is important with regard to enhancing the plasticity of glass-matrix composites.

Mechanical properties of amorphous and devitrified Ni-Zr alloy thin films: A cyclic nanoindentation study

NASA Astrophysics Data System (ADS)

Bhattacharya, Debarati; Chatterjee, Arnomitra; Jana, Swapan

2018-04-01

Thin films of Ni-Zr glassy alloy were deposited at room temperature by magnetron co-sputtering. The alloy films were vacuum annealed in steps of 200°C from room temperature up to 800 °C, where devitrification finally occurred. Mechanical properties of the films were measured after each thermal anneal, through (cyclic) nanoindentation technique. The hardness values were observed to steadily increase with annealing temperature, as the alloy films underwent an amorphous to crystalline transformation. Grazing incidence X-ray diffraction measurements were performed on the as-deposited and annealed films both before and after nanoindentation. The resistance to plastic deformation was strongly linked to the (nano)structure of the material.

Synthesis of ZrO 2 thin films by atomic layer deposition: growth kinetics, structural and electrical properties

NASA Astrophysics Data System (ADS)

Cassir, Michel; Goubin, Fabrice; Bernay, Cécile; Vernoux, Philippe; Lincot, Daniel

2002-06-01

Ultra thin films of ZrO 2 were synthesized on soda lime glass and SnO 2-coated glass, using ZrCl 4 and H 2O precursors by atomic layer deposition (ALD), a sequential CVD technique allowing the formation of dense and homogeneous films. The effect of temperature on the film growth kinetics shows a first temperature window for ALD processing between 280 and 350 °C and a second regime or "pseudo-window" between 380 and 400 °C, with a growth speed of about one monolayer per cycle. The structure and morphology of films of less than 1 μm were characterized by XRD and SEM. From 275 °C, the ZrO 2 film is crystallized in a tetragonal form while a mixture of tetragonal and monoclinic phases appears at 375 °C. Impedance spectroscopy measurements confirmed the electrical properties of ZrO 2 and the very low porosity of the deposited layer.

Effect of lead ion concentration on the structural and optical properties of nano-crystalline PbS thin films

NASA Astrophysics Data System (ADS)

Zaman, S.; Mehmood, S. K.; Mansoor, M.; Asim, M. M.

2014-06-01

PbS thin films have received considerable attention because of their potential applications in opto-electronics applications. Spontaneous reaction of lead acetate and thiourea in aqueous hydrazine hydrate has been used for depositing PbS thin films on glass substrates. Structural and optical properties of PbS thin films are greatly influenced by the morality of the reactants and crystal defects in the lattice. Our work focuses on the variation in lead ion concentration and its effect on the structural and optical properties of PbS thin films. The deposited films were analyzed using XRD, SEM, spectrophotometer and dark resistance measurement. XRD patterns indicated the formation of major phase of nano crystalline PbS with minor presence of lead oxide phase. We also noticed that peak intensity ratio of I111/I200 varied by changing the Pb ion concentration. The film thickness and dark resistance increased whereas optical band gap decreased with the decreasing Pb ion concentration. SEM scans showed that the grain size is less than 100 nm and is not affected by varying Pb ion concentration.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics.

PubMed

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-25

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS 2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10 5 and 10 4 cm -1 in the visible region, respectively. In addition, SnS and SnS 2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS 2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS 2 thin films exhibited on-off drain current ratios of 8.8 and 2.1 × 10 3 and mobilities of 0.21 and 0.014 cm 2 V -1 s -1 , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS 2 thin films were 6.0 × 10 16 and 8.7 × 10 13 cm -3 , respectively, in this experiment.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

ZrB2-CNTs Nanocomposites Fabricated by Spark Plasma Sintering

PubMed Central

Jin, Hua; Meng, Songhe; Xie, Weihua; Xu, Chenghai; Niu, Jiahong

2016-01-01

ZrB2-based nanocomposites with and without carbon nanotubes (CNTs) as reinforcement were prepared at 1600 °C by spark plasma sintering. The effects of CNTs on the microstructure and mechanical properties of nano-ZrB2 matrix composites were studied. The results indicated that adding CNTs can inhibit the abnormal grain growth of ZrB2 grains and improve the fracture toughness of the composites. The toughness mechanisms were crack deflection, crack bridging, debonding, and pull-out of CNTs. The experimental results of the nanograined ZrB2-CNTs composites were compared with those of the micro-grained ZrB2-CNTs composites. Due to the small size and surface effects, the nanograined ZrB2-CNTs composites exhibited stronger mechanical properties: the hardness, flexural strength and fracture toughness were 18.7 ± 0.2 GPa, 1016 ± 75 MPa, and 8.5 ± 0.4 MPa·m1/2, respectively. PMID:28774087

Pinning in high performance MgB2 thin films and bulks: Role of Mg-B-O nano-scale inhomogeneities

NASA Astrophysics Data System (ADS)

Prikhna, Tatiana; Shapovalov, Andrey; Eisterer, Michael; Shaternik, Vladimir; Goldacker, Wilfried; Weber, Harald W.; Moshchil, Viktor; Kozyrev, Artem; Sverdun, Vladimir; Boutko, Viktor; Grechnev, Gennadiy; Gusev, Alexandr; Kovylaev, Valeriy; Shaternik, Anton

2017-02-01

The comparison of nano-crystalline MgB2 oxygen-containing thin film (140 nm) and highly dense bulk materials showed that the critical current density, Jc, depends on the distribution of Mg-B-O nano-scale inhomogeneities. It has been shown that MgB2 bulks with high Jc in low (∼106 A/cm2 in 0-1 T at 10 K) and medium magnetic fields contain MgB0.6-0.8O0.8-0.9 nano-inclusions, where δTc or a combined δTc (dominant) / δl pinning mechanism prevails, while in bulk MgB2 with high Jc in high magnetic fields (Birr(18.5 K) = 15 T, Bc2(0 K) = 42.1 T) MgB1.2-2.7O1.8-2.5 nano-layers are present and δl pinning prevails. The structure of oxygen-containing films with high Jc in low and high magnetic fields (Jc (0 Т) = 1.8 × 107 А/сm2 and Jc (5 Т) = 2 × 106 А/сm2 at 10 К) contains very fine oxygen-enriched Mg-B-O inhomogeneities and δl pinning is realized. The results of DOS calculations in MgB2-xOx cells for x = 0, 0.125, 0.25, 0.5, 1 demonstrate that all compounds are conductors with metal-like behaviour. In the case of ordered oxygen substitution for boron the binding energy, Eb, does not increase sufficiently as compared with that for MgB2, while when oxygen atoms form zigzag chains the calculated Eb is even lower (Eb = -1.15712 Ry).

Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

NASA Astrophysics Data System (ADS)

Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

2016-06-01

High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

Nano crystalline Bi2(VO5) phases in lithium bismuth borate glasses containing mixed vanadium-nickel oxides

NASA Astrophysics Data System (ADS)

Yadav, Arti; Khasa, S.; Dahiya, M. S.; Agarwal, A.

2016-05-01

Glass composition 7V2O5.23Li2O.20Bi2O3.50B2O3 and x(2NiO.V2O5).(30-x)Li2O.20Bi2O3.50B2O3, x=0, 2, 5, 7 and 10, were produced by conventional melt quenching technique. The quenched amorphous glass samples were annealed at temperatures 400°C and 500°C for 6 hours. The Bi2(VO5) crystallite were grown in all prepared glass matrix. Tn vanadium lithium bismuth borate glass (annealed), the some phrase of V2O5-crystal were observed along with the nano crystalline Bi2(VO5) phase. The sharp peaks in FTTR spectra of all annealed compositions were also compatible with the XRD diffraction peaks of the system under investigation. Average crystalline size (D) of the Bi2(VO5) nano-crystallite was ~30nm for samples annealed at 400°C and ~42nm for samples annealed at 500°C. Lattice parameter and the lattice strain for all the samples was also calculated corresponding to the (113) plane of Bi2(VO5) crystallite.

Structural Studies of dielectric HDPE+ZrO2 polymer nanocomposites: filler concentration dependences

NASA Astrophysics Data System (ADS)

Nabiyev, A. A.; Islamov, A. Kh; Maharramov, A. M.; Nuriyev, M. A.; Ismayilova, R. S.; Doroshkevic, A. S.; Pawlukojc, A.; Turchenko, V. A.; Olejniczak, A.; Rulev, M. İ.; Almasan, V.; Kuklin, A. I.

2018-03-01

Structural properties of HDPE+ZrO2 polymer nanocomposites thin films of 80-100μm thicknesses were investigated using SANS, XRD, Laser Raman and FTIR spectroscopy. The mass fraction of the filler was 1, 3, 10, and 20%. Results of XRD analysis showed that ZrO2 powder was crystallized both in monoclinic and in cubic phase under normal conditions. The percentages of monoclinic and cubic phase were found to be 99.8% and 0.2%, respectively. It was found that ZrO2 nanoparticles did not affect the main crystal and chemical structure of HDPE, but the degree of crystallinity of the polymer decreases with increasing concentration of zirconium oxide. SANS experiments showed that at ambient conditions ZrO2 nanoparticles mainly distributed like mono-particles in the polymer matrix at all concentrations of filler.The structure of HDPE+ZrO2 does not changes up to 132°C at 1-3% of filler, excepting changing of the polymer structure at temperatures upper 82°C. At high concentrations of filler 10-20% the aggregation of ZrO2 nanoparticles occurs, forming domains of 2.5μm. The results of Raman and FTIR spectroscopy did not show additional specific chemical bonds between the filler and the polymer matrix. New peaks formation was not observed. These results suggest that core-shell structure does not exist in the polymer nanocomposite system.

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

A new approach to preparing Bi2Zr2O7 photocatalysts for dye degradation

NASA Astrophysics Data System (ADS)

Luo, Yijia; Cao, Liyun; Huang, Jianfeng; Feng, Liangliang; Yao, Chunyan

2018-01-01

A new synthetic route is presented to prepared pure Bi2Zr2O7 material, in which a NaNO3/KNO3 molten salt is used to obtain the resulting Bi2Zr2O7 at a relatively low temperature of 400 °C under atmospheric pressure. Powder x-ray diffraction confirmed the structure type and purity of the as-prepared sample, and further revealed that a single-source Bi(OH)3 · Zr(OH)4 · nH2O complex precursor plays a crucial role to synthesize Bi2Zr2O7 nanocrystals. Scanning electron microscope and transmission electron microscope show the morphologies and sizes of Bi2Zr2O7 crystal in detail, and UV-vis diffuse reflectance measurements evidenced the wide light absorption range. Furthermore, the as-synthesized Bi2Zr2O7 with smaller particle size and larger specific surface area exhibit superior photocatalytic activities compared with the sample obtained without adding molten salts.

Thermal phase separation of ZrSiO4 thin films and frequency- dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Yilmaz, E.

2018-05-01

In this work, the thermal phase separation and annealing optimization of ZrSiO4 thin films have been carried out. Following annealing optimization, the frequency-dependent electrical characteristics of the Al/ZrSiO4/p-Si/Al MOS capacitors were investigated in detail. The chemical evolution of the films under various annealing temperatures was determined by Fourier transform infrared spectroscopy (FTIR) measurements. The phase separation was determined by x-ray diffraction (XRD) measurements. The electrical parameters were determined via the capacitance–voltage (C–V), conductance–voltage (G/ω) and leakage-current–voltage (Ig–Vg ). The results demonstrate that zirconium silicate formations are present at 1000 °C annealing with the SiO2 interfacial layer. The film was in amorphous form after annealing at 250 °C. The tetragonal phases of ZrO2 were obtained after annealing at 500 °C. When the temperature approaches 750 °C, transitions from the tetragonal phase to the monoclinic phase were observed. The obtained XRD peaks after 1000 °C annealing matched the crystalline peaks of ZrSiO4. This means that the crystalline zirconium dioxide in the structure has been converted into a crystalline silicate phase. The interface states increased to 5.71 × 1010 and the number of border traps decreased to 7.18 × 1010 cm‑2 with the increasing temperature. These results indicate that an excellent ZrSiO4/Si interface has been fabricated. The order of the leakage current varied from 10‑9 Acm‑2 to 10‑6 Acm‑2. The MOS capacitor fabricated with the films annealed at 1000 °C shows better behavior in terms of its structural, chemical and electrical properties. Hence, detailed frequency-dependent electrical characteristics were performed for the ZrSiO4 thin film annealed at 1000 °C. Very slight capacitance variations were observed under the frequency variations. This shows that the density of frequency-dependent charges is very low at the ZrSiO4/Si interface. The

Grain Refinement and Mechanical Properties of Cu–Cr–Zr Alloys with Different Nano-Sized TiCp Addition

PubMed Central

Zhang, Dongdong; Bai, Fang; Wang, Yong; Wang, Jinguo; Wang, Wenquan

2017-01-01

The TiCp/Cu master alloy was prepared via thermal explosion reaction. Afterwards, the nano-sized TiCp/Cu master alloy was dispersed by electromagnetic stirring casting into the melting Cu–Cr–Zr alloys to fabricate the nano-sized TiCp-reinforced Cu–Cr–Zr composites. Results show that nano-sized TiCp can effectively refine the grain size of Cu–Cr–Zr alloys. The morphologies of grain in Cu–Cr–Zr composites changed from dendritic grain to equiaxed crystal because of the addition and dispersion of nano-sized TiCp. The grain size decreased from 82 to 28 μm with the nano-sized TiCp content. Compared with Cu–Cr–Zr alloys, the ultimate compressive strength (σUCS) and yield strength (σ0.2) of 4 wt% TiCp-reinforced Cu–Cr–Zr composites increased by 6.7% and 9.4%, respectively. The wear resistance of the nano-sized TiCp-reinforced Cu–Cr–Zr composites increased with the increasing nano-sized TiCp content. The wear loss of the nano-sized TiCp-reinforced Cu–Cr–Zr composites decreased with the increasing TiCp content under abrasive particles. The eletrical conductivity of Cu–Cr–Zr alloys, 2% and 4% nano-sized TiCp-reinforced Cu–Cr–Zr composites are 64.71% IACS, 56.77% IACS and 52.93% IACS, respectively. PMID:28786937

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

NASA Astrophysics Data System (ADS)

Reddy, N. Nanda Kumar; Akkera, Harish Sharma; Sekhar, M. Chandra; Park, Si-Hyun

2017-12-01

In the present work, we investigated the effect of Zr doping (0-6 at%) on the structural, electrical, and optical properties of tin oxide (SnO2) thin films deposited onto glass substrates using a spray pyrolysis technique. The room-temperature X-ray diffraction pattern shows that all deposited films exhibit polycrystalline tetragonal structure. The pure SnO2 film is grown along a preferred (200) direction, whereas Zr-doped SnO2 (Zr:SnO2) films started growing along the (220) orientation along with a high intensity peak of (200). Scanning electron microscope (SEM) and atomic force microscope (AFM) images showed that the grains of the films are spherical in structure, and the grain size decreased with increasing of Zr concentration. The optical transmission spectra of deposited films as a function of wavelength confirm that the average optical transmittance is > 85% for Zr:SnO2 films. The value of the optical bandgap is significantly decreased from 3.94 to 3.68 eV with increasing Zr concentration. Furthermore, the electrical measurements found that the sheet resistance ( R sh) and resistivity ( ρ) values are decreased with increasing of Zr doping. The lowest values of R sh = 6.82 Ω and ρ = 0.4 × 10- 3 Ω cm are found in 6-at% Zr-doped SnO2 film. In addition, a good efficiency value of the figure of merit ( ɸ = 3.35 × 10- 3 Ω-1) is observed in 6-at% Zr-doped SnO2 film. These outstanding properties of Zr-doped SnO2 films make them useful for several optoelectronic device applications.

Chemically deposited nano grain composed MoS(2) thin films for supercapacitor application.

PubMed

Pujari, R B; Lokhande, A C; Shelke, A R; Kim, J H; Lokhande, C D

2017-06-15

Low temperature soft chemical synthesis approach is employed towards MoS 2 thin film preparation on cost effective stainless steel substrate. 3-D semispherical nano-grain composed surface texture of MoS 2 film is observed through FE-SEM technique. Electrochemical supercapacitor performance of MoS 2 film is tested from cyclic voltammetry (CV) and galvanostatic charge discharge (GCD) techniques in 1M aqueous Na 2 SO 4 electrolyte. Specific capacitance (C s ) of 180Fg -1 with CV cycling stability of 82% for 1000 cycles is achieved. Equivalent series resistance (R s ) of 1.78Ωcm -2 observed through Nyquist plot shows usefulness of MoS 2 thin film for charge conduction in supercapacitor application. Copyright © 2016. Published by Elsevier Inc.

The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.

PubMed

Wu, Chien-Hung; Huang, Bo-Wen; Chang, Kow-Ming; Wang, Shui-Jinn; Lin, Jian-Hong; Hsu, Jui-Mei

2016-06-01

The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).

Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

NASA Astrophysics Data System (ADS)

Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

1993-07-01

Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

Grain Refinement and Mechanical Properties of Cu-Cr-Zr Alloys with Different Nano-Sized TiCp Addition.

PubMed

Zhang, Dongdong; Bai, Fang; Wang, Yong; Wang, Jinguo; Wang, Wenquan

2017-08-08

The TiC p /Cu master alloy was prepared via thermal explosion reaction. Afterwards, the nano-sized TiC p /Cu master alloy was dispersed by electromagnetic stirring casting into the melting Cu-Cr-Zr alloys to fabricate the nano-sized TiC p -reinforced Cu-Cr-Zr composites. Results show that nano-sized TiC p can effectively refine the grain size of Cu-Cr-Zr alloys. The morphologies of grain in Cu-Cr-Zr composites changed from dendritic grain to equiaxed crystal because of the addition and dispersion of nano-sized TiC p . The grain size decreased from 82 to 28 μm with the nano-sized TiC p content. Compared with Cu-Cr-Zr alloys, the ultimate compressive strength (σ UCS ) and yield strength (σ 0.2 ) of 4 wt% TiC p -reinforced Cu-Cr-Zr composites increased by 6.7% and 9.4%, respectively. The wear resistance of the nano-sized TiCp-reinforced Cu-Cr-Zr composites increased with the increasing nano-sized TiCp content. The wear loss of the nano-sized TiC p -reinforced Cu-Cr-Zr composites decreased with the increasing TiC p content under abrasive particles. The eletrical conductivity of Cu-Cr-Zr alloys, 2% and 4% nano-sized TiCp-reinforced Cu-Cr-Zr composites are 64.71% IACS, 56.77% IACS and 52.93% IACS, respectively.

Effect of Gallium Substitution on Lithium-Ion Conductivity and Phase Evolution in Sputtered Li7-3 xGa xLa3Zr2O12 Thin Films.

PubMed

Rawlence, M; Filippin, A N; Wäckerlin, A; Lin, T-Y; Cuervo-Reyes, E; Remhof, A; Battaglia, C; Rupp, J L M; Buecheler, S

2018-04-25

Replacing the liquid electrolyte in conventional lithium-ion batteries with thin-film solid-state lithium-ion conductors is a promising approach for increasing energy density, lifetime, and safety. In particular, Li 7 La 3 Zr 2 O 12 is appealing due to its high lithium-ion conductivity and wide electrochemical stability window. Further insights into thin-film processing of this material are required for its successful integration into solid-state batteries. In this work, we investigate the phase evolution of Li 7-3 x Ga x La 3 Zr 2 O 12 in thin films with various amounts of Li and Ga for stabilizing the cubic phase. Through this work, we gain valuable insights into the crystallization processes unique to thin films and are able to form dense Li 7-3 x Ga x La 3 Zr 2 O 12 layers stabilized in the cubic phase with high in-plane lithium-ion conductivities of up to 1.6 × 10 -5 S cm -1 at 30 °C. We also note the formation of cubic Li 7 La 3 Zr 2 O 12 at the relatively low temperature of 500 °C.

Measurement of host-to-activator transfer efficiency in nano-crystalline Y{sub 2}O{sub 3}:Eu{sup 3+} under VUV excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waite, Christopher; Mann, Rusty; Diaz, Anthony L., E-mail: DiazA@cwu.edu

2013-02-15

We have conducted a systematic study of the excitation and reflectance spectra of nano-crystalline Y{sub 2}O{sub 3}:Eu prepared by combustion synthesis. Excitation through the host lattice becomes relatively more efficient as the firing temperature of the precursor is increased, while reflectance properties remain essentially unchanged. Using these data, host-to-activator transfer efficiencies were calculated for excitation at the band edge of Y{sub 2}O{sub 3}, and evaluated using a competition kinetics model. From this analysis we conclude that the relatively low luminous efficiency of these materials is due more to poor bulk crystallinity than to surface loss effects. - Graphical abstract: Themore » low luminous efficiency of nano-crystalline Y{sub 2}O{sub 3}:Eu{sup 3+} prepared by combustion synthesis is due to poor bulk crystallinity rather than surface loss effects. Highlights: Black-Right-Pointing-Pointer We report on the optical properties of Y{sub 2}O{sub 3}:Eu{sup 3+} prepared by combustion synthesis. Black-Right-Pointing-Pointer Host-to-activator transfer efficiencies under VUV excitation were calculated. Black-Right-Pointing-Pointer The low luminous efficiency of these materials is due to poor bulk crystallinity.« less

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub; Chui, Chi On; Saraswat, Krishna C.; McIntyre, Paul C.

2003-09-01

High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ˜55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (˜10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (>200 mV) and high frequency dispersion were observed in capacitance-voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

PubMed Central

2011-01-01

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data. PMID:21794156

Novel ZrO2 based ceramics stabilized by Fe2O3, SiO2 and Y2O3

NASA Astrophysics Data System (ADS)

Rada, S.; Culea, E.; Rada, M.

2018-03-01

Samples in the 5Fe2O3·10SiO2·xY2O3·(85-x)ZrO2 composition where x = 5, 10 and 15 mol% Y2O3 were synthesized and investigated by XRD, SEM, density measurements, FTIR, UV-Vis, EPR and PL spectroscopies. X-ray diffraction patterns confirm the presence of the tetragonal and cubic ZrO2 crystalline phases in all samples. The IR data show the overlaps of absorption bands assigned to Zrsbnd Osbnd Zr and Sisbnd Osbnd linkages in samples. UV-Vis and PL data indicate higher concentrations of intrinsic defects by doping with Y2O3 concentrations. The EPR spectra are characterized by two resonance lines situated at about g ∼ 4.3 and g ∼ 2 for lower Y2O3 contents.

Ethanol dehydrogenation on copper catalysts with ytterbium stabilized tetragonal ZrO2 support

NASA Astrophysics Data System (ADS)

Chuklina, S. G.; Pylinina, A. I.; Podzorova, L. I.; Mikhailina, N. A.; Mikhalenko, I. I.

2016-12-01

The physicochemical and catalytic properties of Cu-containing crystalline zirconia, obtained via sol-gel synthesis in the presence of Yb3+ ions and polyvinylpyrrolidone, are studied. DTG/DSC, TEM, XRD and BET methods are used to analyze the crystallization, texture, phase uniformity, surface and porosity of ZrO2 nanopowders. It is shown that increasing the copper content (1, 3, and 5 wt % from ZrO2) raises the dehydrogenation activity in the temperature range of 100-400°C and lowers the activation energy of acetaldehyde formation. It is found that the activity of all Cu/ t-ZrO2 catalysts grows under the effects of the reaction medium, due to the migration and redispersion of copper.

ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

2016-02-01

HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

A novel electrochemical sensor for detecting hyperin with a nanocomposite of ZrO2-SDS-SWCNTs as decoration.

PubMed

Li, Shuo; Lei, Sheng; Yu, Qian; Zou, Lina; Ye, Baoxian

2018-08-01

A novel high-sensitive electrochemical sensor with glassy carbon electrode (GCE) as support for hyperin determination is successfully designed and constructed, and the well-shaped nano-meter modified material is synthesized via a one-step and facile route. Functionalized with surfactant sodium dodecyl sulfate (SDS), Single-Walled Carbon Nanotubes (SWCNTs) are synchronously grafted with ZrO 2 nanoparticles to develop into the as-prepared nano-composite (ZrO 2 -SDS-SWCNTs). Compared to the previous reports related with hyperin detection, the linear range gets wider and detection limit (LOD) becomes lower with the aid of this novel nano-composite modified glassy carbon electrode (ZrO 2 -SDS-SWCNTs/GCE). The crystalline phases and functionalization of the preparation process has been investigated by X-ray diffraction (XRD) and Fourier transform infrared (FT-IR) instrument analysis, respectively, and the micro-morphology of related modified materials is also visibly characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). In addition, electrochemical properties of the modified materials are comparably explored by means of impedance spectroscopy (EIS) and cyclic voltammograms (CV). According to the established calibration curve under optimized condition, the peak current (Differential pulse voltammetry (DPV) signal) keeps a linear relationship with hyperin concentration in the ranges of 1.0 × 10 -9 - 3.0 × 10 -7 mol L -1 , meanwhile detection limit reaches as low as 5 × 10 -10 mol L -1 (S/N = 3). As for practical applications, the proposed sensor has also worked well on sensitive hyperin determination in real species Abelmoschus manihot. Copyright © 2018 Elsevier B.V. All rights reserved.

Synthesis of Zr2WP2O12/ZrO2 Composites with Adjustable Thermal Expansion.

PubMed

Zhang, Zhiping; Sun, Weikang; Liu, Hongfei; Xie, Guanhua; Chen, Xiaobing; Zeng, Xianghua

2017-01-01

Zr 2 WP 2 O 12 /ZrO 2 composites were fabricated by solid state reaction with the goal of tailoring the thermal expansion coefficient. XRD, SEM and TMA were used to investigate the composition, microstructure, and thermal expansion behavior of Zr 2 WP 2 O 12 /ZrO 2 composites with different mass ratio. Relative densities of all the resulting Zr 2 WP 2 O 12 /ZrO 2 samples were also tested by Archimedes' methods. The obtained Zr 2 WP 2 O 12 /ZrO 2 composites were comprised of orthorhombic Zr 2 WP 2 O 12 and monoclinic ZrO 2 . As the increase of the Zr 2 WP 2 O 12 , the relative densities of Zr 2 WP 2 O 12 /ZrO 2 ceramic composites increased gradually. The coefficient of thermal expansion of the Zr 2 WP 2 O 12 /ZrO 2 composites can be tailored from 4.1 × 10 -6 K -1 to -3.3 × 10 -6 K -1 by changing the content of Zr 2 WP 2 O 12 . The 2:1 Zr 2 WP 2 O 12 /ZrO 2 specimen shows close to zero thermal expansion from 25 to 700°C with an average linear thermal expansion coefficient of -0.09 × 10 -6 K -1 . These adjustable and near zero expansion ceramic composites will have great potential application in many fields.

Synthesis of Transparent Aqueous ZrO2 Nanodispersion with a Controllable Crystalline Phase without Modification for a High-Refractive-Index Nanocomposite Film.

PubMed

Xia, Yi; Zhang, Cong; Wang, Jie-Xin; Wang, Dan; Zeng, Xiao-Fei; Chen, Jian-Feng

2018-05-30

The controllable synthesis of metal oxide nanoparticles is of fundamental and technological interest. In this article, highly transparent aqueous nanodispersion of ZrO 2 with controllable crystalline phase, high concentration, and long-term stability was facilely prepared without any modification via the reaction of inexpensive inorganic zirconium salt and sodium hydroxide in water under an acid surrounding, combined with hydrothermal treatment. The as-prepared transparent nanodispersion had an average particle size of 7 nm, a high stability of 18 months, and a high solid content of 35 wt %. ZrO 2 nanocrystals could be readily dispersed in many solvents with high polarity including ethanol, dimethyl sulfoxide, acetic acid, ethylene glycol, and N, N-dimethylformamide, forming stable transparent nanodispersions. Furthermore, highly transparent polyvinyl alcohol/ZrO 2 nanocomposite films with high refractive index were successfully prepared with a simple solution mixing route. The refractive index could be tuned from 1.528 to 1.754 (@ 589 nm) by changing the mass fraction (0-80 wt %) of ZrO 2 in transparent nanocomposite films.

High-yield sol-gel synthesis of well-dispersed, colorless ZrO(2) nanocrystals.

PubMed

Mizuno, Mikihisa; Sasaki, Yuichi; Lee, Sungkil; Katakura, Hitoshi

2006-08-15

A 93% high-yield synthesis of well-dispersed, colorless zirconium dioxide (ZrO(2)) nanocrystals is reported. In this synthesis, hydrolysis and condensation reactions of zirconium(IV) tert-butoxide in the presence of oleic acid (100 degrees C) formed ZrO(2) precursors. The ZrO(2) precursors were made of -Zr-O-Zr- networks surrounded by oleic acid molecules. Annealing (280 degrees C) the precursors dispersed in dioctyl ether caused crystallization of the -Zr-O-Zr- networks, thereby generating 4 nm ZrO(2) nanocrystals stabilized with oleic acid. The particles were highly crystalline and tetragonal phase. A dense ZrO(2) nanocrystal dispersion in toluene (280 mg/mL) showed a transmittance of about 90% (3 mm optical path length) in the whole visible region.

Miscibility of amorphous ZrO2-Al2O3 binary alloy

NASA Astrophysics Data System (ADS)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Preparation of ZrO II/nano-TiO II composite powder by sol-gel method

NASA Astrophysics Data System (ADS)

Baharvandi, H. R.; Mohammadi, E.; Abdizadeh, H.; Hadian, A. M.; Ehsani, N.

2007-07-01

The effects of concentration of TTIP, amount of distilled water, and calcination temperature on morphology and particle size distribution of ZrO II/nano-TiO II catalysts were investigated. Mixed ZrO II/nano-TiO II powders were prepared by a modified sol-gel method by varying the mole fraction of TTIP from 0.002 to 0.01, H IIO/TTIP fraction from 2 to 8, and various stirring time (2, 4, and 10 h). The prepared ZrO II/nano-TiO II powders have been characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and TG/DTA. Each oxide was calcined at the temperature between 110 and 1000°C. The results showed that the calcinations temperature has a pronounced effect on the phase formation and particle size of the calcined zirconium titanate (ZT) powders.

Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

PubMed Central

2013-01-01

To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model. PMID:24330524

Effects of Zirconium Ions Doping on the Structural and Thermochromic Properties of VO2 Thin Films

NASA Astrophysics Data System (ADS)

Li, Yuanbao; Liu, Juncheng; Wang, Danping; Dang, Yuanyuan

2017-11-01

As an inorganic functional material, VO2 thin films are expected to be used for smart windows. However, these films are not conducive to practical applications when the phase transition temperature ( Tc) of the VO2 is approximately 68°C, which is greater than room temperature. To decrease Tc, the effect of Zr4+ doping on the structure and properties of VO2 films were investigated. The films were prepared using a sol-gel process, spin-coating on quartz glasses, and annealing at 525°C in a tube furnace within a nitrogen atmosphere. The results demonstrate that these films have a highly preferential crystalline orientation on the substrate; however, the primary two x-ray diffraction pattern peaks shift slightly toward the small angle, and when 7 at.% Zr4+ was doped in the VO2 film, the deviation angle was 0.16°, and the crystallite size was approximately 98 nm. A large number of grains were found on the surface of the pure VO2 films, but all the Zr4+ doped films had a layered structure, and the thickness of the films was approximately 200 nm. The Tc of these films was characterized using differential scanning calorimetry, and the luminous and solar transmittance was characterized using a UV-Vis-NIR spectrophotometer, which demonstrated that the effect of Zr4+ doping decreased Tc by approximately 1°C per 1 at.% on average, and the Tc of the 7 at.% film was slightly greater than that of the 5 at.% film, the phase transition temperature of which was 61.4°C. The transmittance decreased as the doping concentration increased, and 1 at.% Zr4+ doping increased the luminous regulation efficiency (Δ T lum) and solar modulation efficiency (Δ T sol). The Δ T lum of the pure VO2 film and the 1 at.% Zr4+-doped VO2 films was 10.9% and 11.2%, and Δ T sol was 14.4 and 15.2%, respectively.

Preparation of Si nano-crystals with controlled oxidation state from SiO disproportionated by ZrO2 ball-milling

NASA Astrophysics Data System (ADS)

Okamoto, Yuji; Harada, Yoshitomo; Ohta, Narumi; Takada, Kazunori; Sumiya, Masatomo

2016-09-01

We demonstrate that a SiO disproportionation reaction can be achieved simply by high energy mechanochemical milling. The planetary ball-milling of ZrO2 for a few minutes generated Si nano-crystals. Milling conditions including rotation speed, ball number, milling time, and type of ball material were able to control the oxidation states of Si. The ball-milled SiO powder was tested as an anode of a lithium battery. ZrO2 contamination from the vial and balls was eliminated by dipping the ball-milled SiO powder in (NH4)HSO4 molten salt and heating for 5 min. The disproportionated SiO powder showed characteristics comparable to those of a powder prepared by a conventional heating process taking several hours.

Study of thin film production of ceramic ZrO2 on silicon wafer using second harmonic Nd-Yag laser with pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Suliyanti, Maria M.; Hidayah, Affi Nur; Kurniawan, K. H.

2012-06-01

Study about thin film production using technique pulsed laser deposition have been done. The Pulsed Laser Deposition (PLD) method has been used for growing thin film of ZrO2 on silicon wafer substrate (111 single crystal, thickness 400μm and diameter 7.5 cm). The target made from Zirconia oxide powder mixing with PVA and press using pressure 100kgN. The laser beam was focused by a lens (f = 100mm) through a quartz window onto the sample surface and the substrate was placed in parallel line with target. The distance between the target and the substrate is about 1 cm. The early results of this synthesis using 75 mJ Nd-YAG second harmonic laser pulse (532 nm Nd-YAG) and low pressure chamber surrounding gas 5 Torr. The irradiation of laser take around 6000 shoots or 10 minutes using frequencies laser 10 Hz. The micro thickness of film can be produced on silicon wafer using this technique. The results of ZrO2 thin film on substrate about 26.92%.

High crystalline CuAlS2 thin films via chemical spray pyrolysis route

NASA Astrophysics Data System (ADS)

Naveena, D.; Logu, T.; Sethuraman, K.; Bose, A. Chandra

2018-04-01

High crystalline and non-toxic CuAlS2 thin films were successfully deposited on glass substrate by chemical spray pyrolysis method. The as-prepared sample was subjected to the sulphurization at 450 °C for 30 min. The structural, morphological, optical and electrical properties of the as deposited and sulphurized films have been systematically analyzed. XRD result shows that the sulphurized sample exhibited tetragonal crystal structure with increase in crystallite size. The optical band gap was found to decrease from 3.25 eV to 3.21 eV and the carrier concentration is 4.22×1015cm-3 for the as-deposited film which rises to 6.29×1015cm-3 after sulphurizing the film in nitrogen atmosphere. The results of this study provide a framework for fabricating an optimized high crystalline CuAlS2 layer in optoelectronic devices.

Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

NASA Astrophysics Data System (ADS)

Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

2016-11-01

Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

Evolution of zirconyl-stearate Langmuir monolayers and the synthesized ZrO2 thin films with pH

NASA Astrophysics Data System (ADS)

Choudhary, Raveena; Sharma, Rajni; Brar, Loveleen K.

2018-04-01

ZrO2 thin films have a wide range of applications ranging from photonics, antireflection coatings, and resistive oxygen gas sensors, as a gate dielectric and in high temperature fuel cells. We have used the deposition of zirconyl stearate monolayers followed by their oxidation as a method for the synthesis of zirconium oxide thin films. The zirconyl stearate films have been studied and deposited for first time to the best of our knowledge. The Langmuir monolayers are studied using pressure-Area (π-A) isotherms and oscillatory barrier method. The morphology of the films for limited number of layers was studied with FE-SEM to determine the effect of pH on the final ZrO2 film. The 200 layer deposition films show pure monoclinic phase. The films have a band gap ˜6.0eV with a strong PL emission peak is at 490 nm and a weak peak is at 423 nm. So the films formed by this deposition method are suitable for luminescent applications

Dielectric Properties of BST/(Y 2O 3) x(ZrO 2) 1-x/BST Trilayer Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, Santosh K.; Misra, D.

2011-01-31

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure ismore » studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.« less

Preparation of UO2, ThO2 and (Th,U)O2 pellets from photochemically-prepared nano-powders

NASA Astrophysics Data System (ADS)

Pavelková, Tereza; Čuba, Václav; de Visser-Týnová, Eva; Ekberg, Christian; Persson, Ingmar

2016-02-01

Photochemically-induced preparation of nano-powders of crystalline uranium and/or thorium oxides and their subsequent pelletizing has been investigated. The preparative method was based on the photochemically induced formation of amorphous solid precursors in aqueous solution containing uranyl and/or thorium nitrate and ammonium formate. The EXAFS analyses of the precursors shown that photon irradiation of thorium containing solutions yields a compound with little long-range order but likely "ThO2 like" and the irradiation of uranium containing solutions yields the mixture of U(IV) and U(VI) compounds. The U-containing precursors were carbon free, thus allowing direct heat treatment in reducing atmosphere without pre-treatment in the air. Subsequent heat treatment of amorphous solid precursors at 300-550 °C yielded nano-crystalline UO2, ThO2 or solid (Th,U)O2 solutions with high purity, well-developed crystals with linear crystallite size <15 nm. The prepared nano-powders of crystalline oxides were pelletized without any binder (pressure 500 MPa), the green pellets were subsequently sintered at 1300 °C under an Ar:H2 (20:1) mixture (UO2 and (Th,U)O2 pellets) or at 1600 °C in ambient air (ThO2 pellets). The theoretical density of the sintered pellets varied from 91 to 97%.

CO Oxidation and Subsequent CO 2 Chemisorption on Alkaline Zirconates: Li 2 ZrO 3 and Na 2 ZrO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alcántar-Vázquez, Brenda; Duan, Yuhua; Pfeiffer, Heriberto

Here, two different alkaline zirconates (Li 2ZrO 3 and Na 2ZrO 3) were studied as possible bifunctional catalytic-captor materials for CO oxidation and the subsequent CO 2 chemisorption process. Initially, CO oxidation reactions were analyzed in a catalytic reactor coupled to a gas chromatograph, using Li 2ZrO 3 and Na 2ZrO 3, under different O 2 partial flows. We found results clearly showed that Na 2ZrO 3 possesses much better catalytic properties than Li 2ZrO 3. After the CO-O 2 oxidation catalytic analysis, CO2 chemisorption process was analyzed by thermogravimetric analysis, only for the Na 2ZrO 3 ceramic. The resultsmore » confirmed that Na 2ZrO 3 is able to work as a bifunctional material (CO oxidation and subsequent CO 2 chemisorption), although the kinetic CO 2 capture process was not the best one under the physicochemical condition used in this case. For Na 2ZrO 3, the best CO conversions were found between 445 and 580 °C (100%), while Li 2ZrO 3 only showed a 35% of efficiency between 460 and 503 °C. However, in the Na 2ZrO 3 case, at temperatures higher than 580 °C its catalytic activity gradually decreases as a result of CO 2 capture process. Finally, all these experiments were compared and supported with theoretical thermodynamic data.« less

CO Oxidation and Subsequent CO 2 Chemisorption on Alkaline Zirconates: Li 2 ZrO 3 and Na 2 ZrO 3

DOE PAGES

Alcántar-Vázquez, Brenda; Duan, Yuhua; Pfeiffer, Heriberto

2016-08-26

Here, two different alkaline zirconates (Li 2ZrO 3 and Na 2ZrO 3) were studied as possible bifunctional catalytic-captor materials for CO oxidation and the subsequent CO 2 chemisorption process. Initially, CO oxidation reactions were analyzed in a catalytic reactor coupled to a gas chromatograph, using Li 2ZrO 3 and Na 2ZrO 3, under different O 2 partial flows. We found results clearly showed that Na 2ZrO 3 possesses much better catalytic properties than Li 2ZrO 3. After the CO-O 2 oxidation catalytic analysis, CO2 chemisorption process was analyzed by thermogravimetric analysis, only for the Na 2ZrO 3 ceramic. The resultsmore » confirmed that Na 2ZrO 3 is able to work as a bifunctional material (CO oxidation and subsequent CO 2 chemisorption), although the kinetic CO 2 capture process was not the best one under the physicochemical condition used in this case. For Na 2ZrO 3, the best CO conversions were found between 445 and 580 °C (100%), while Li 2ZrO 3 only showed a 35% of efficiency between 460 and 503 °C. However, in the Na 2ZrO 3 case, at temperatures higher than 580 °C its catalytic activity gradually decreases as a result of CO 2 capture process. Finally, all these experiments were compared and supported with theoretical thermodynamic data.« less

Corrosion Performance of Nano-ZrO₂ Modified Coatings in Hot Mixed Acid Solutions.

PubMed

Xu, Wenhua; Wang, Zhenyu; Han, En-Hou; Wang, Shuai; Liu, Qian

2018-06-01

A nano-ZrO₂ modified coating system was prepared by incorporation of nano-ZrO₂ concentrates into phenolic-epoxy resin. The corrosion performance of the coatings was evaluated in hot mixed acid solution, using electrochemical methods combined with surface characterization, and the effects of nano-ZrO₂ content were specially focused on. The results showed that 1% and 3% nano-ZrO₂ addition enhanced the corrosion resistance of the coatings, while 5% nano-ZrO₂ addition declined it. The coating with 3% nano-ZrO₂ presented the minimum amount of species diffusion, the lowest average roughness (5.94 nm), and the highest C/O ratio (4.55) and coating resistance, and it demonstrated the best corrosion performance among the coating specimens.

Characterisation of well-adhered ZrO2 layers produced on structured reactors using the sonochemical sol-gel method

NASA Astrophysics Data System (ADS)

Jodłowski, Przemysław J.; Chlebda, Damian K.; Jędrzejczyk, Roman J.; Dziedzicka, Anna; Kuterasiński, Łukasz; Sitarz, Maciej

2018-01-01

The aim of this study was to obtain thin zirconium dioxide coatings on structured reactors using the sonochemical sol-gel method. The preparation method of metal oxide layers on metallic structures was based on the synergistic combination of three approaches: the application of ultrasonic irradiation during the synthesis of Zr sol-gel based on a precursor solution containing zirconium(IV) n-propoxide, the addition of stabilszing agents, and the deposition of ZrO2 on the metallic structures using the dip-coating method. As a result, dense, uniform zirconium dioxide films were obtained on the FeCrAlloy supports. The structured reactors were characterised by various physicochemical methods, such as BET, AFM, EDX, XRF, XRD, XPS and in situ Raman spectroscopy. The results of the structural analysis by Raman and XPS spectroscopy confirmed that the metallic surface was covered by a ZrO2 layer without any impurities. SEM/EDX mapping revealed that the deposited ZrO2 covered the metallic support uniformly. The mechanical and high temperature tests showed that the developed ultrasound assisted sol-gel method is an efficient way to obtain thin, well-adhered zirconium dioxide layers on the structured reactors. The prepared metallic supports covered with thin ZrO2 layers may be a good alternative to layered structured reactors in several dynamics flow processes, for example for gas exhaust abatement.

Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications.

PubMed

Pawbake, Amit S; Waykar, Ravindra G; Late, Dattatray J; Jadkar, Sandesh R

2016-02-10

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E(1)2g and A1g at ∼356 and ∼420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of ∼12 s and recovery time of ∼13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of ∼51 s and recovery time of ∼88 s were observed with sensitivity ∼137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3/NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Ade, Ramesh; Sambasiva, V.; Kolte, Jayant; Karthik, T.; Kulkarni, Ajit R.; Venkataramani, N.

2018-03-01

In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (α E ) of ~0.70 V cm-1. Oe-1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.

Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors

NASA Astrophysics Data System (ADS)

Fujii, Mami N.; Ishikawa, Yasuaki; Ishihara, Ryoichi; van der Cingel, Johan; Mofrad, Mohammad R. T.; Bermundo, Juan Paolo Soria; Kawashima, Emi; Tomai, Shigekazu; Yano, Koki; Uraoka, Yukiharu

2016-06-01

In a previous work, we reported the high field effect mobility of ZnO-doped In2O3 (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

Preparation of magnetron sputtered ZrO2 films on Si for gate dielectric application

NASA Astrophysics Data System (ADS)

Kondaiah, P.; Mohan Rao, G.; Uthanna, S.

2012-11-01

Zirconium oxide (ZrO2) thin films were deposited on to p - Si and quartz substrates by sputtering of zirconium target at an oxygen partial pressure of 4x10-2 Pa and sputter pressure of 0.4 Pa by using DC reactive magnetron sputtering technique. The effect of annealing temperature on structural, optical, electrical and dielectric properties of the ZrO2 films was systematically studied. The as-deposited films were mixed phases of monoclinic and orthorhombic ZrO2. As the annealing temperature increased to 1073 K, the films were transformed in to single phase orthorhombic ZrO2. Fourier transform infrared studies conform the presence of interfacial layer between Si and ZrO2. The optical band gap and refractive index of the as-deposited films were 5.82 eV and 1.81. As the annealing temperature increased to 1073 K the optical band gap and refractive index increased to 5.92 eV and 2.10 respectively. The structural changes were influenced the capacitance-voltage and current-voltage characteristics of Al/ZrO2/p-Si capacitors. The dielectric constant was increased from 11.6 to 24.5 and the leakage current was decreased from 1.65×10-7 to 3.30×10-9 A/ cm2 for the as-deposited and annealed at 1073 K respectively.

Synthesis, characterization, and photocatalytic application of Pd/ZrO2 and Pt/ZrO2

NASA Astrophysics Data System (ADS)

Saeed, Khalid; Sadiq, Mohammad; Khan, Idrees; Ullah, Saleem; Ali, Nauman; Khan, Adnan

2018-05-01

Zirconia-supported palladium (Pd/ZrO2) and Zirconia-supported platinum (Pt/ZrO2) nanoparticles (NPs) are synthesized from their precursors via impregnation technique. The Pd/ZrO2 and Pt/ZrO2 NPs were analyzed via SEM and EDX, while the study of indigo disulfonate dye degradation was carried out by UV/VIS spectrophotometer. The SEM micrographs illustrated that the Pd and Pt NPs were well placed on ZrO2 surface. The Pd/ZrO2 and Pt/ZrO2 NPs were also employed as photocatalysts for the photodegradation of indigo disulfonate in an aqueous medium under UV-light irradiation. The photodegradation study presented that Pd/ZrO2 and Pt/ZrO2 NPs degraded 96 and 94% of indigo disulfonate in 14 h, respectively. The effect of pH of medium and catalyst dosage and efficiency of recovered Pd/ZrO2 and Pt/ZrO2 NPs on the photocatalytic degradation were also studied. It was also found that the maximum degradation of dye was found at pH 10 (95-97%) and at 0.02 g weight (40.28%).

Nano crystalline Bi{sub 2}(VO{sub 5}) phases in lithium bismuth borate glasses containing mixed vanadium-nickel oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yadav, Arti, E-mail: artidabhur@gmail.com; Khasa, S.; Dahiya, M. S.

2016-05-23

Glass composition 7V{sub 2}O{sub 5}·23Li{sub 2}O·20Bi{sub 2}O{sub 3}·50B{sub 2}O{sub 3} and x(2NiO·V{sub 2}O{sub 5})·(30-x)Li{sub 2}O·20Bi{sub 2}O{sub 3}·50B{sub 2}O{sub 3}, x=0, 2, 5, 7 and 10, were produced by conventional melt quenching technique. The quenched amorphous glass samples were annealed at temperatures 400°C and 500°C for 6 hours. The Bi{sub 2}(VO{sub 5}) crystallite were grown in all prepared glass matrix. Tn vanadium lithium bismuth borate glass (annealed), the some phrase of V{sub 2}O{sub 5}-crystal were observed along with the nano crystalline Bi{sub 2}(VO{sub 5}) phase. The sharp peaks in FTTR spectra of all annealed compositions were also compatible with the XRDmore » diffraction peaks of the system under investigation. Average crystalline size (D) of the Bi{sub 2}(VO{sub 5}) nano-crystallite was ~30 nm for samples annealed at 400°C and ~42 nm for samples annealed at 500°C. Lattice parameter and the lattice strain for all the samples was also calculated corresponding to the (113) plane of Bi{sub 2}(VO{sub 5}) crystallite.« less

Ultrasound-assisted sol-gel synthesis of ZrO2.

PubMed

Guel, Marlene Lariza Andrade; Jiménez, Lourdes Díaz; Hernández, Dora Alicia Cortés

2017-03-01

Synthesis of tetragonal ZrO 2 by both conventional sol-gel and ultrasound-assisted sol-gel methods and using a non-ionic surfactant Tween-20, was performed. A porous microstructure composed of nanometric particles was observed. Tetragonal ZrO 2 was obtained using a low heat treatment temperature of powders, 500°C by both methods. A higher crystallinity and a shorter reaction time were observed when ultrasound was used in the sol-gel method due to the cavitation phenomenon. Copyright © 2016 Elsevier B.V. All rights reserved.

Self-organized antireflection CuIn(S,Se)2 nano-protrusions on flexible substrates by ion erosion based on CuInS2 nanocrystal precursor inks

NASA Astrophysics Data System (ADS)

Yen, Yu-Ting; Wang, Yi-Chung; Chen, Chia-Wei; Tsai, Hung-Wei; Chen, Yu-Ze; Hu, Fan; Chueh, Yu-Lun

2015-11-01

In this work, an approach to achieve surface nano-protrusions on a chalcopyrite CuIn(S,Se)2 thin film was demonstrated. Home-made CuInS2 nanocrystals with average diameter of 20 nm were prepared and characterized. By applying ion erosion process on the CuIn(S,Se)2 film, large-area self-aligned nano-protrusions can be formed. Interestingly, the process can be applied on flexible substrate where the CuIn(S,Se)2 film remains intact with no visible cracking after several bending tests. In addition, reflectance spectra reveal the extraordinary anti-reflectance characteristics of nano-protrusions on the CuIn(S,Se)2 film with the incident light from 350 to 2000 nm. A 36-cm2 CuIn(S,Se)2 film with nano-protrusions on flexible molybdenum foil substrate has been demonstrated, which demonstrated the feasibility of developing low cost with a high optical absorption CuIn(S,Se)2 flexible thin film.

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ajiki, Yoshiharu, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp; Kan, Tetsuo; Yahiro, Masayuki

We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillarsmore » at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.« less

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

NASA Astrophysics Data System (ADS)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

Nano-crystalline porous tin oxide film for carbon monoxide sensing

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun (Inventor); Savinell, Robert F. (Inventor); Jin, Zhihong (Inventor)

2000-01-01

A tin oxide sol is deposited on platinum electrodes (12) of a sensor (10). The sol is calcined at a temperature of 500 to 800.degree. C. to produce a thin film of tin oxide with a thickness of about 150 nm to 2 .mu. and having a nano-crystalline structure with good stability. The sensor rapidly detects reducing gases, such as carbon monoxide, or hydrocarbons and organic vapors. Sensors using films calcined at around 700.degree. C. have high carbon monoxide selectivity with a response time of around 4 minutes and a recovery time of 1 minute, and therefore provide good detection systems for detection of trace amounts of pollutants such as toxic and flammable gases in homes, industrial settings, and hospitals.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Crystalline Thermally Evaporated Bi2Se3 Thin Films Synthesized from Mechanically Milled Powder

NASA Astrophysics Data System (ADS)

Amara, A.; Abdennouri, N.; Drici, A.; Abdelkader, D.; Bououdina, M.; Chaffar Akkari, F.; Khemiri, N.; Kanzari, M.; Bernède, J. C.

2017-08-01

Bi2Se3 powder has been successfully synthesized via mechanical ball milling of bismuth and selenium as starting materials. X-ray diffraction characterization revealed the formation of the rhombohedral and orthorhombic phases of Bi2Se3 material belonging to systems with space groups R\\bar{3}m and Pbnm, respectively. The advantageous last finding is confirmed by the Rietveld refinement of the x-ray diffraction data. Furthermore, the analysis of the x-ray data of thermally deposited thin films revealed that both orthorhombic and rhombohedral phases are coexisting in the layer. The morphology of the ball milled powder was studied by scanning electron microscopy. The phase formation of the material is confirmed by Raman spectroscopy. M-H (Magnetization versus Magnetic field) curve indicates that Bi2Se3 powder has a ferromagnetic behavior. Additionally, absorbance and transmittance measurements were carried out on the obtained thermally evaporated thin films and yielded a band gap of 1.33 eV supporting the potential application of the heterogeneous rhombohedral/orthorhombic Bi2Se3 material in photovoltaics.

In Situ FT-IR Spectroscopic Study of CO2 and CO Adsorption on Y2O3, ZrO2, and Yttria-Stabilized ZrO2

PubMed Central

2013-01-01

In situ FT-IR spectroscopy was exploited to study the adsorption of CO2 and CO on commercially available yttria-stabilized ZrO2 (8 mol % Y, YSZ-8), Y2O3, and ZrO2. All three oxides were pretreated at high temperatures (1173 K) in air, which leads to effective dehydroxylation of pure ZrO2. Both Y2O3 and YSZ-8 show a much higher reactivity toward CO and CO2 adsorption than ZrO2 because of more facile rehydroxylation of Y-containing phases. Several different carbonate species have been observed following CO2 adsorption on Y2O3 and YSZ-8, which are much more strongly bound on the former, due to formation of higher-coordinated polydentate carbonate species upon annealing. As the crucial factor governing the formation of carbonates, the presence of reactive (basic) surface hydroxyl groups on Y-centers was identified. Therefore, chemisorption of CO2 most likely includes insertion of the CO2 molecule into a reactive surface hydroxyl group and the subsequent formation of a bicarbonate species. Formate formation following CO adsorption has been observed on all three oxides but is less pronounced on ZrO2 due to effective dehydroxylation of the surface during high-temperature treatment. The latter generally causes suppression of the surface reactivity of ZrO2 samples regarding reactions involving CO or CO2 as reaction intermediates. PMID:24009780

Porous TiO2-ZrO2 thin film formed by electrochemical technique to improve the biocompatibility of titanium alloy in physiological environment

NASA Astrophysics Data System (ADS)

Benea, L.; Dănăilă, E.; Ponthiaux, P.

2017-02-01

Porous Ti and Ti alloys have received increasing research interest for bone tissue engineering, especially for dental and orthopaedic implants because they provide cell ingrowths and vascularization, improving of adhesion and osseointegration. The tribocorrosion process is encountered in orthopaedic and dentistry applications, since it is known that the implants are often exposed to simultaneous chemical/electrochemical and mechanical stresses. The purpose of this study was to carry out a systematic investigation of the tribo-electrochemical performance of porous TiO2-ZrO2 thin film formed by anodization of Ti-10Zr alloy surface in an artificial saliva solution and to compare the resulted performance with that of the untreated Ti-10Zr alloy surface in order to be applied for biomedical use. The in situ electrochemical technique used for investigation of tribo-electrochemical degradation was the open circuit potential (OCP) measurement performed before, during and after sliding tests. The results presented herein show that controlled anodic oxidation method can significantly improve the tribocorrosion and friction performances of Ti-10Zr alloy surface intended for biomedical applications.

Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

NASA Astrophysics Data System (ADS)

Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

2013-07-01

Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

Effect of MoSi2 Content on Dry Sliding Tribological Properties of Zr-Based Bulk Metallic Glass Composites

NASA Astrophysics Data System (ADS)

Liu, Longfei; Yang, Jun

2017-12-01

Zr55Cu30Al10Ni5 bulk metallic glass and its composites were prepared by suction casting into a copper mold. The effect of MoSi2 content on the tribological behavior of Zr55Cu30Al10Ni5 BMG was studied by using a high-speed reciprocating friction and wear tester. The results indicate that the friction coefficient and wear resistance of the BMGs can be improved by a certain amount of crystalline phase induced by MoSi2 content from 1 to 3% and deteriorated with MoSi2 content of 4%. The wear mechanism of both the metallic glass and its composite is abrasive wear. The mechanism of crystalline phase-dependent tribological properties of the composite was discussed based on the wear track and mechanical properties in the present work. The wear behavior of Zr55Cu30Al10Ni5 BMG and its composite indicates that a good combination of the toughness and the hardness can make the composite be well wear resistant.

Effect of Nano-SiO2 on the Early Hydration of Alite-Sulphoaluminate Cement

PubMed Central

Sun, Jinfeng; Xu, Zhiqiang; Li, Weifeng; Shen, Xiaodong

2017-01-01

The impact of nano-SiO2 on the early hydration properties of alite-sulphoaluminate (AC$A) cement was investigated with a fixed water to solid ratio (w/s) of one. Nano-SiO2 was used in partial substitution of AC$A cement at zero, one and three wt %. Calorimetry, X-ray diffraction (XRD), thermogravimetric/derivative thermogravimetric (TG/DTG), mercury intrusion porosimetry (MIP) and scanning electron microscopy (SEM) analyses were used to characterize the hydration and hydrates of the blended cement. The hydration of the AC$A cement was significantly promoted, resulting in an increase of the heat released with the addition of nano-SiO2. Phase development composition analysis showed that nano-SiO2 had no effect on the type of crystalline hydration products of the AC$A cement. Moreover, nano-SiO2 showed significant positive effects on pore refinement where the total porosity decreased by 54.09% at three days with the inclusion of 3% nano-SiO2. Finally, from the SEM observations, nano-SiO2 was conducive to producing a denser microstructure than that of the control sample. PMID:28467348

Sol-gel-Derived nano-sized double layer anti-reflection coatings (SiO2/TiO2) for low-cost solar cell fabrication.

PubMed

Lee, Seung Jun; Hur, Man Gyu; Yoon, Dae Ho

2013-11-01

We investigate nano-sized double layer anti-reflection coatings (ARCs) using a TiO2 and SiO2 sol-gel solution process for mono-crystalline silicon solar cells. The process can be easily adapted for spraying sol-gel coatings to reduce manufacturing cost. The spray-coated SiO2/TiO2 nano-sized double layer ARCs were deposited on mono-crystalline silicon solar cells, and they showed good optical properties. The spray coating process is a lower-cost fabrication process for large-scale coating than vacuum deposition processes such as PECVD. The measured average optical reflectance (300-1200 nm) was about approximately 8% for SiO2/TiO2 nano-sized double layer ARCs. The electrical parameters of a mono-crystalline silicon solar cell and reflection losses show that the SiO2/TiO2 stacks can improve cell efficiency by 0.2% compared to a non-coated mono-crystalline silicon solar cell. In the results, good correlation between theoretical and experimental data was obtained. We expect that the sol-gel spray-coated mono-crystalline silicon solar cells have high potential for low-cost solar cell fabrication.

Hydrothermal synthesis of copper zirconium phosphate hydrate [Cu(OH)2Zr(HPO4)2·2H2O] and an investigation of its lubrication properties in grease.

PubMed

Zhang, Xiaosheng; Xu, Hong; Zuo, Zhijun; Lin, Zhi; Ferdov, Stanislav; Dong, Jinxiang

2013-08-28

Copper zirconium phosphate hydrate (Cu(OH)2Zr(HPO4)2·2H2O, hereafter referred to as Cu-α-ZrP) with high crystallinity was directly synthesized in a NaF-CuO-ZrO-P2O5-H2O system under hydrothermal conditions. The copper ion was confirmed to be an exchangeable cation in the Cu-α-ZrP through elemental analysis and a proton ion exchange process. The crystal structure of the Cu-α-ZrP was determined ab initio by using X-ray powder diffraction data. In the structure, the CuO6 octahedron would be located in an exchangeable atom position. Moreover, Cu-α-ZrP was evaluated as an additive in grease in a four ball test. The maximum nonseizure load (PB, representing the load-carrying capacity) of the base grease containing Cu-α-ZrP was increased from 353 to 1235 N. The excellent load-carrying capacity may be explained by the easier adherence of the material to the worn surface forming a tight protective film.

Effect of ZrO2 film thickness on the photoelectric properties of mixed-cation perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Yanyan; Zhao, Li; Wei, Shoubin; Xiao, Meng; Dong, Binghai; Wan, Li; Wang, Shimin

2018-05-01

In this work, perovskite solar cells (PSCs) were fabricated in the ambient air, with a scaffold layer composed of TiO2/ZrO2 double layer as the mesoscopic layer and carbon as the counter electrode. The effect of ZrO2 thin film thickness on the photovoltaic performances of PSCs was also studied in detail. Results showed that the photoelectric properties of as-prepared PSCs largely depend on the thin film thickness due to a series of factors, including surface roughness, charge transport resistance, and electron-hole recombination rate. The power conversion efficiency of PSCs increased from 8.37% to 11.33% by varying the thin film thickness from 75 nm to 305 nm, and the optimal power conversion efficiency was realized up to the 11.33% with a thin film thickness of 167 nm. This research demonstrates a promising route for the high-efficiency and low-cost photovoltaic technology.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Hydrodeoxygenation of p -Cresol over Pt/Al 2 O 3 Catalyst Promoted by ZrO 2 , CeO 2 , and CeO 2 –ZrO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Weiyan; Wu, Kui; Liu, Pengli

2016-07-20

ZrO 2-Al 2O 3 and CeO 2-Al 2O 3 were prepared by a co-precipitation method and selected as supports for Pt catalysts. The effects of CeO 2 and ZrO 2 on the surface area and Brønsted acidity of Pt/Al 2O 3 were studied. In the hydrodeoxygenation (HDO) of p-cresol, the addition of ZrO 2 promoted the direct deoxygenation activity on Pt/ZrOO 2-Al 2O 3 via Caromatic-O bond scission without benzene ring saturation. Pt/CeOO 2-Al 2O 3 exhibited higher deoxygenation extent than Pt/Al 2O 3 due to the fact that Brønsted acid sites on the catalyst surface favored the adsorption ofmore » p-cresol. With the advantages of CeO 2 and ZrO 2 taken into consideration, CeO 2-ZrOO 2-Al 2O 3 was prepared, leading to the highest HDO activity of Pt/CeO 2-ZrOO 2-Al 2O 3. The deoxygenation extent for Pt/CeO 2-ZrOO 2-Al 2O 3 was 48.4% and 14.5% higher than that for Pt/ZrO2O 2-Al 2O 3 and Pt/CeOO 2-Al 2O 3, respectively.« less

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO2-ZrO2 nanocomposite

NASA Astrophysics Data System (ADS)

Tomar, Laxmi J.; Bhatt, Piyush J.; Desai, Rahul K.; Chakrabarty, B. S.; Panchal, C. J.

2016-05-01

TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X -ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphite coated conducting glass plate was used as counter electrode. The I - V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO2, TiO2-ZrO2 and Zn doped TiO2-ZrO2 nanocomposites were found 0.71%, 1.97% and 4.58% respectively.

The Effect of ZrO2 Nanoparticles on the Microstructure and Properties of Sintered WC–Bronze-Based Diamond Composites

PubMed Central

Sun, Youhong; Wu, Haidong; Li, Meng; Meng, Qingnan; Gao, Ke; Lü, Xiaoshu; Liu, Baochang

2016-01-01

Metal matrix-impregnated diamond composites are widely used in diamond tool manufacturing. In order to satisfy the increasing engineering requirements, researchers have paid more and more attention to enhancing conventional metal matrices by applying novel methods. In this work, ZrO2 nanoparticles were introduced into the WC–bronze matrix with and without diamond grits via hot pressing to improve the performance of conventional diamond composites. The effects of ZrO2 nanoparticles on the microstructure, density, hardness, bending strength, and wear resistance of diamond composites were investigated. The results indicated that the hardness and relative density increased, while the bending strength decreased when the content of ZrO2 nanoparticles increased. The grinding ratio of diamond composites increased significantly by 60% as a result of nano-ZrO2 addition. The enhancement mechanism was discussed. Diamond composites showed the best overall properties with the addition of 1 wt % ZrO2 nanoparticles, thus paving the way for further applications. PMID:28773469

Synthesis of zirconia (ZrO2) nanowires via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Baek, M. K.; Park, S. J.; Choi, D. J.

2017-02-01

Monoclinic zirconia nanowires were synthesized by chemical vapor deposition using ZrCl4 powder as a starting material at 1200 °C and 760 Torr. Graphite was employed as a substrate, and an Au thin film was pre-deposited on the graphite as a catalyst. The zirconia nanostructure morphology was observed through scanning electron microscopy and transmission electron microscopy. Based on X-ray diffraction, selected area electron diffraction, and Raman spectroscopy data, the resulting crystal structure was found to be single crystalline monoclinic zirconia. The homogeneous distributions of Zr, O and Au were studied by scanning transmission electron microscopy with energy dispersive X-ray spectroscopy mapping, and there was no metal droplet at the nanowire tips despite the use of an Au metal catalyst. This result is apart from that of conventional metal catalyzed nanowires.

Synthesis of Copper-Based Nanostructured Catalysts on SiO2-Al2O3, SiO2-TiO2, and SiO2-ZrO2 Supports for NO Reduction.

PubMed

Namkhang, Pornpan; Kongkachuichay, Paisan

2015-07-01

The selective catalytic reduction of NO over a series of Cu-based catalysts supported on modified silica including SiO2-Al2O3, SiO2-TiO2, and SiO2-ZrO2 prepared via a sol-gel process and a flame spray pyrolysis (FSP) was studied. The prepared catalysts were characterized by means of TEM, XRD, XRF, TPR, and nitrogen physisorption measurement techniques, to determine particle diameter, morphology, crystallinity, phase composition, copper reducibility, surface area, and pore size of catalysts. The particles obtained from sol-gel method were almost spherical while the particles obtained from the FSP were clearly spherical and non-porous nanosized particles. The effects of Si:Al, Si:Ti, and Si:Zr molar ratio of precursor were identified as the domain for different crystalline phase of materials. It was clearly seen that a high SiO2 content inhibited the crystallization of materials. The BET surface area of catalysts obtained from sol-gel method was higher than that from the FSP and it shows that surface area increased with increasing SiO2 molar ratio due to high surface area from SiO2. The catalyst performances were tested for the selective catalytic reduction of NO with H2. It was found that the catalyst prepared over 7 wt% Cu on Si02-Al2O3 support was the most active compared with the others which converted NO as more than 70%. Moreover, the excess copper decreased the performance of NO reduction, due to the formation of CuO agglomeration covered on the porous silica as well as the alumina surface, preventing the direct contact of CO2 and AL2O3.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Influence of Ytterbia Content on Residual Stress and Microstructure of Y2O3-ZrO2 Thin Films Prepared by EB-PVD*

NASA Astrophysics Data System (ADS)

Xiao, Qi-Ling; Shao, Sriu-Ying; He, Hong-Bo; Shao, Jian-Da; Fan, Zheng-Xiu

2008-09-01

Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 molar contents (0, 3, 7, and 12mol%) are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques: the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress incre ases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.

Improved Tribological Performance of Amorphous Carbon (a-C) Coating by ZrO2 Nanoparticles

PubMed Central

Tang, Jinzhu; Ding, Qi; Zhang, Songwei; Wu, Guizhi; Hu, Litian

2016-01-01

Nanomaterials, such as Graphene, h-BN nanoparticles and MoS2 nanotubes, have shown their ability in improving the tribological performance of amorphous carbon (a-C) coatings. In the current study, the effectiveness of ZrO2 nanoparticles (ZrO2-NPs) in lubricating the self-mated nonhydrogenated a-C contacts was investigated in boundary lubrication regime. The results showed that 13% less friction and 50% less wear compared to the base oil were achieved by employing ZrO2-NPs in the base oil in self-mated a-C contacts. Via analyzing the ZrO2-NPs and the worn a-C surface after tests, it was found that the improved lubrication by ZrO2-NPs was based on “polishing effects”, which is a new phenomenon observed between a-C and nanoparticles. Under the “polishing effect”, micro-plateaus with extremely smooth surface and uniform height were produced on the analyzed a-C surface. The resulting topography of the a-C coating is suitable for ZrO2-NPs to act as nano-bearings between rubbing surfaces. Especially, the ZrO2-NPs exhibited excellent mechanical and chemical stability, even under the severe service condition, suggesting that the combination of nonhydrogenated a-C coating with ZrO2-NPs is an effective, long lasting and environment-friendly lubrication solution. PMID:28773916

Second amorphous-to-crystalline phase transformation in Cu(60)Ti(20)Zr(20) bulk metallic glass.

PubMed

Cao, Q P; Li, J F; Zhang, P N; Horsewell, A; Jiang, J Z; Zhou, Y H

2007-06-20

The second amorphous-to-crystalline phase transformation in Cu(60)Ti(20)Zr(20) bulk metallic glass was investigated by differential scanning calorimetry and x-ray diffractometry. The difference of the Gibbs free energies between the amorphous phase and the crystalline products during the transformation is estimated to be about 2.46 kJ mol(-1) at 753 K, much smaller than the 61 kJ mol(-1) obtained assuming that it is a polymorphic transformation. It was revealed that the phase transformation occurs through a eutectic crystallization of Cu(51)Zr(14) and Cu(2)TiZr, having an effective activation energy of the order of 400 kJ mol(-1). The average Avrami exponent n is about 2.0, indicating that the crystallization is diffusion controlled.

Anomalous behavior of B{sub 1g} mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com; Ojha, S.; Singh, Fouran, E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com

2015-12-15

The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO) thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO{sub 2} lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb{sup +5} in the TiO{sub 2} lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Ramanmore » (MR) spectra of films with small size crystallites shows stiffening of about 4 cm{sup −1} for the E{sub g(1)} mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B{sub 1g} mode exhibits a large anomalous softening of 20 cm{sup −1} with asymmetrical broadening; which was not reported for the case of pure TiO{sub 2} crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb{sup 5+} doping induced reduction of Ti{sup 4+} ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS) and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.« less

Synthesis and characterization of ZnO:TiO2 nano composites thin films deposited on glass substrate by sol-gel spray coating technique

NASA Astrophysics Data System (ADS)

Sutanto, Heri; Nurhasanah, Iis; Hidayanto, Eko; Wibowo, Singgih; Hadiyanto

2015-12-01

In this work, (ZnO)x:(TiO2)1-x nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol-gel spray coating technique onto glass substrate. Pure TiO2 and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO2 and ZnO:TiO2 thin films at different composition have been investigated. Ultraviolet - Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employed in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO2 on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.

Compositional Dependence of Optical and Structural Properties of Nanogranular Mixed ZrO2/ZnO/SnO2 Thin Film

NASA Astrophysics Data System (ADS)

Salari, S.; Ghodsi, F. E.

2018-06-01

A study on the optical properties and photoluminescence (PL) spectra of ternary oxide nanogranular thin films comprising Zr, Zn, and Sn revealed that the change in component ratio could direct the roadmap to improve characteristics of the films. Grazing angle X-ray diffraction analysis showed that incorporation of Sn atoms into the tetragonal structure of Zn/Zr thin film resulted in an amorphous structure. The band gap of film was tunable by precisely controlling the concentration of components. The widening of band gap could correlate to the quantum confinement effect. PL spectra of the composite thin films under excitation at 365 nm showed a sharp red emission with relatively Gaussian line shape, which was intensified in the optimum percentage ratio of 50/30/20. This nearly red emission is attributed to the radiative emission of electrons captured at low-energy traps located near the valence band. An optimum red emission is strongly desirable for use in white LEDs. The comparative study on FTIR spectra of unary, binary, and ternary thin films confirmed successful composition of three different metal oxides in ternary thin films. Detailed investigation on FTIR spectra of ternary compounds revealed that the quenching in PL emission at higher percentage of Sn was originally due to the hydroxyl group.

Effect of the ZrCl4 concentration in the (NaCl-KCl)eqiv-UO2Cl2-ZrCl4 melt and the electrolysis current density on the quantitative composition of UO2-ZrO2 cathode deposits. Calculation and experiment

NASA Astrophysics Data System (ADS)

Krotov, V. E.; Filatov, E. C.

2014-08-01

A method is proposed for calculating the ZrO2 content in the (NaCl-KCl)eqiv-UO2Cl2-ZrCl4 melt. Based on the known composition of a UO2-ZrO2 cathode deposit, the content is calculated at current densities of 0.08-0.63 A/cm2 and ZrCl4 concentrations of 0-12.3 wt %. The calculated and experimental ZrO2 contents in UO2-ZrO2 cathode deposits are in qualitative and adequate quantitative agreement.

Effect of ZrO(2) additions on the crystallization, mechanical and biological properties of MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics.

PubMed

Li, H C; Wang, D G; Meng, X G; Chen, C Z

2014-06-01

A series of ZrO(2) doped MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics were obtained by sintering method. The crystallization behavior, phase composition, morphology and structure of glass-ceramics were characterized. The bending strength, elastic modulus, fracture toughness, micro-hardness and thermal expansion coefficient (TEC) of glass-ceramics were investigated. The in vitro bioactivity and cytotoxicity tests were used to evaluate the bioactivity and biocompatibility of glass-ceramics. The sedimentation mechanism and growth process of apatites on sample surface were discussed. The results showed that the mainly crystalline phases of glass-ceramics were Ca(5)(PO4)3F (fluorapatite) and β-CaSiO(3). (β-wollastonite). m-ZrO(2) (monoclinic zirconia) declined the crystallization temperatures of glasses. t-ZrO(2) (tetragonal zirconia) increased the crystallization temperature of Ca(5)(PO4)(3)F and declined the crystallization temperature of β-CaSiO(3). t-ZrO(2) greatly increased the fracture toughness, bending strength and micro-hardness of glass-ceramics. The nanometer apatites were induced on the surface of glass-ceramic after soaking 28 days in SBF (simulated body fluid), indicating the glass-ceramic has good bioactivity. The in vitro cytotoxicity test demonstrated the glass-ceramic has no toxicity to cell. Copyright © 2014 Elsevier B.V. All rights reserved.

Nanofiber/ZrO2-based mixed matrix separator for high safety/high-rate lithium-ion batteries

NASA Astrophysics Data System (ADS)

Xiao, Wei; Liu, Jianguo; Yan, Chuanwei

2017-10-01

A novel asymmetric separator based on a thin bacterial cellulose nanofiber (BCF)/nano-ZrO2 composite layer and a non-woven support was prepared by paper-making method. Owing to the relatively polar constituents and well-developed, gradient porous structure, the separator exhibited the advantages of higher thermal resistance, electrolyte wettability, and ionic conductivity in comparison to polyethylene separator. Based on these advantages, the Li/LiFePO4 cells assembled from this composite separator showed excellent performance characteristics, including outstanding C-rate capability, high capacity and cycling performance. Production of the composite separator is simple, environmentally benign and economically viable. Therefore, it's a good candidate for creating improved lithium-ion batteries.

Co-precipitation synthesis of nano-composites consists of zinc and tin oxides coatings on glass with enhanced photocatalytic activity on degradation of Reactive Blue 160 KE2B.

PubMed

Habibi, Mohammad Hossein; Mardani, Maryam

2015-02-25

Nano-composite containing zinc oxide-tin oxide was obtained by a facile co-precipitation route using tin chloride tetrahydrate and zinc chloride as precursors and coated on glass by Doctor Blade deposition. The crystalline structure and morphology of composites were evaluated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The XRD results showed peaks relative to zinc oxide with hexagonal wurtzite structure and tin oxide with tetragonal structure. FESEM observations showed that the nano-composite consisted of aggregates of particles with an average particle size of 18 nm. The photocatalytic activity of the pure SnO2, pure ZnO, ZnSnO3-Zn2SnO4 and ZnO-SnO2 nano-structure thin films was examined using the degradation of a textile dye Reactive Blue 160 (KE2B). ZnO-SnO2 nano-composite showed enhanced photo-catalytic activity than the pure zinc oxide and tin oxide. The enhanced photo-catalytic activity of the nano-composite was ascribed to an improved charge separation of the photo-generated electron-hole pairs. Copyright © 2014 Elsevier B.V. All rights reserved.

Fabrication and electrochemical performance of a stable, anode supported thin BaCe0.4Zr0.4Y0.2O3-δ electrolyte Protonic Ceramic Fuel Cell

NASA Astrophysics Data System (ADS)

Nasani, Narendar; Ramasamy, Devaraj; Mikhalev, Sergey; Kovalevsky, Andrei V.; Fagg, Duncan P.

2015-03-01

The present work deals with the fabrication and electrochemical characterisation of a potential protonic ceramic fuel cell based on a Ni-BaZr0.85Y0.15O3-δ anode supported thin film proton conducting BaCe0.4Zr0.4Y0.2O3-δ electrolyte with a Pr2NiO4+δ cathode. Anode and electrolyte materials were prepared by an acetate-H2O2 combustion method. A thin (∼5 μm), dense and crack free BaCe0.4Zr0.4Y0.2O3-δ electrolyte film was successfully obtained on a porous anode support by spin coating and firing at 1450 °C. Maximum power densities of 234, 158, 102 and 63 mW cm-2 at 700, 650, 600 and 550 °C, respectively were achieved for the Ni-BaZr0.85Y0.15O3-δ/BaCe0.4Zr0.4Y0.2O3-δ/Pr2NiO4+δ single cell under fuel cell testing conditions. Electrode polarisation resistance was assessed at open circuit conditions by use of electrochemical impedance spectroscopy (EIS) and is shown to dominate the area specific resistance at low temperatures. Postmortem analysis by scanning electron microscopy (SEM), reveals that no delamination occurs at anode/electrolyte or electrolyte/cathode interfaces upon cell operation.

Facile biological synthetic strategy to morphologically aligned CeO2/ZrO2 core nanoparticles using Justicia adhatoda extract and ionic liquid: Enhancement of its bio-medical properties.

PubMed

Pandiyan, Nithya; Murugesan, Balaji; Sonamuthu, Jegatheeswaran; Samayanan, Selvam; Mahalingam, Sundrarajan

2018-01-01

In this study, a typical green synthesis route has approached for CeO 2 /ZrO 2 core metal oxide nanoparticles using ionic liquid mediated Justicia adhatoda extract. This synthesis method is carried out at simple room temperature condition to obtain the core metal oxide nanoparticles. XRD, SEM and TEM studies employed to study the crystalline and surface morphological properties under nucleation, growth, and aggregation processes. CeO 2 /ZrO 2 core metal oxides display agglomerated nano stick-like structure with 20-45nm size. GC-MS spectroscopy confirms the presence of vasicinone and N,N-Dimethylglycine present in the plant extract, which are capable of converting the corresponding metal ion precursor to CeO 2 /ZrO 2 core metal oxide nanoparticles. In FTIR, the corresponding stretching for Ce-O and Zr-O bands indicated at 498 and 416cm -1 and Raman spectroscopy also supports typical stretching frequencies at 463 and 160cm -1 . Band gap energy of the CeO 2 /ZrO 2 core metal oxide is 3.37eV calculated from UV- DRS spectroscopy. The anti-bacterial studies performed against a set of bacterial strains the result showed that core metal oxide nanoparticles more susceptible to gram-positive (G+) bacteria than gram-negative (G-) bacteria. A unique feature of the antioxidant behaviors core metal oxides reduces the concentration of DPPH radical up to 89%. The CeO 2 /ZrO 2 core metal oxide nanoparticles control the S. marcescent bio-film formation and restrict the quorum sensing. The toxicology behavior of CeO 2 /ZrO 2 core metal oxide NPs is found due to the high oxygen site vacancies, ROS formation, smallest particle size and higher surface area. This type of green synthesis route may efficient and the core metal oxide nanoparticles will possess a good bio-medical agent in future. Copyright © 2017 Elsevier B.V. All rights reserved.

On the AC-conductivity mechanism in nano-crystalline Se79-xTe15In6Pbx (x = 0, 1, 2, 4, 6, 8 and 10) alloys

NASA Astrophysics Data System (ADS)

Anjali; Patial, Balbir Singh; Bhardwaj, Suresh; Awasthi, A. M.; Thakur, Nagesh

2017-10-01

In-depth analysis of complex AC-conductivity for nano-crystalline Se79-xTe15In6Pbx (x = 0, 1, 2, 4, 6, 8 and 10 at wt%) alloys is made in the temperature range 308-423 K and over the frequency range 10-1-107 Hz, to understand the conduction mechanism. The investigated nano-crystalline alloys were prepared by melt-quench technique. Sharp structural peaks in X-ray diffraction pattern indicate the nano-crystalline nature, which is also confirmed by FESEM. The AC conductivity shows universal characteristics and at higher frequency a transition from dc to dispersive behavior occurs. Moreover, it is confirmed that ac conductivity (σac) obeys the Jonscher power law as ωs (s< 1). The obtained results are analyzed in the light of various theoretical models. The correlated barrier hopping (CBH) model associated with non-intimate valence alternation pairs (NVAP's) is found most appropriate to describe the conduction mechanisms in these alloys. In addition, the CBH model description reveals that the bipolaron (single polaron) transport dominates at lower (higher) temperature. The density of localized states has also been deduced.

Effects of Different Surfactants on Structural, Tribological and Electrical Properties of Pulsed Electro-Codeposited Cu-ZrO2 Composite Coatings

NASA Astrophysics Data System (ADS)

Maharana, H. S.; Basu, A.

2018-03-01

Cu-ZrO2 composite coating was synthesized by pulse electrodeposition from an acidic sulfate electrolyte dispersed with nano-sized ZrO2 particles. Effects of different surfactants in different amounts on the codeposition and distribution of ZrO2 particles in the copper matrix, surface-mechanical (hardness and wear) and electrical (conductivity) properties of developed composite coatings have been thoroughly investigated. Sodium dodecyl sulfate (SDS), poly acrylic acid (PAA) and glucose have been added in the electrolyte in different concentrations as anionic, polymeric and nonionic surfactants. Obtained experimental results confirmed that addition of SDS up to 1 g/L improves the amount of codeposited ZrO2 particles in the copper matrix and surface-mechanical properties of the nanocomposite coatings. But, in case of PAA- and glucose-assisted coatings, highest amount of ZrO2 codeposition was observed in 0.5 g/L PAA and 20 g/L glucose-assisted coatings, which in turn affected the mechanical properties. Surface-mechanical properties were found to be affected by coating matrix morphology and crystallographic orientation along with embedded ZrO2 particle content. Electrical conductivity of all the deposits not only depends upon the codeposition of ZrO2 particles in the matrix but also on the microstructure and crystallographic orientation.

Sub-micron phase coexistence in small-molecule organic thin films revealed by infrared nano-imaging

PubMed Central

Westermeier, Christian; Cernescu, Adrian; Amarie, Sergiu; Liewald, Clemens; Keilmann, Fritz; Nickel, Bert

2014-01-01

Controlling the domain size and degree of crystallization in organic films is highly important for electronic applications such as organic photovoltaics, but suitable nanoscale mapping is very difficult. Here we apply infrared-spectroscopic nano-imaging to directly determine the local crystallinity of organic thin films with 20-nm resolution. We find that state-of-the-art pentacene films (grown on SiO2 at elevated temperature) are structurally not homogeneous but exhibit two interpenetrating phases at sub-micrometre scale, documented by a shifted vibrational resonance. We observe bulk-phase nucleation of distinct ellipsoidal shape within the dominant pentacene thin-film phase and also further growth during storage. A faint topographical contrast as well as X-ray analysis corroborates our interpretation. As bulk-phase nucleation obstructs carrier percolation paths within the thin-film phase, hitherto uncontrolled structural inhomogeneity might have caused conflicting reports about pentacene carrier mobility. Infrared-spectroscopic nano-imaging of nanoscale polymorphism should have many applications ranging from organic nanocomposites to geologic minerals. PMID:24916130

Surface Crystallization of a MgO/Y2O3/SiO2/Al2O3/ZrO2 Glass: Growth of an Oriented β-Y2Si2O7 Layer and Epitaxial ZrO2

PubMed Central

Wisniewski, Wolfgang; Seidel, Sabrina; Patzig, Christian; Rüssel, Christian

2017-01-01

The crystallization behavior of a glass with the composition 54.7 SiO2·10.9 Al2O3·15.0 MgO·3.4 ZrO2·16.0 Y2O3 is studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD) and (scanning) transmission electron microscopy [(S)TEM] including energy-dispersive X-ray spectrometry (EDXS). This glass shows the sole surface crystallization of four different yttrium silicates of the composition Y2Si2O7 (YS). The almost simultaneous but independent nucleation of α-, β-, δ-, and ε-YS at the surface is followed by growth into the bulk, where ε-YS quickly dominates a first crystallized layer. An accumulation of Mg at the growth front probably triggers a secondary nucleation of β-YS, which forms a thin compact layer before fragmenting into a highly oriented layer of fine grained crystals occupying the remaining bulk. The residual glass between the YS growth structures allows the crystallization of indialite, yttrium stabilized ZrO2 (Y-ZrO2) and very probably μ-cordierite during cooling. Hence, this glass basically shows the inverted order of crystallization observed in other magnesium yttrium alumosilicate glasses containing less Y2O3. An epitaxial relationship between Y-ZrO2 and ε-YS is proven and multiple twinning relationships occur in the YS phases. PMID:28281661

Effect of photocatalytic reduction of carbon dioxide by N-Zr co-doped nano TiO2.

PubMed

Zhang, Ru; Wang, Li; Kang, Zhuo; Li, Qiang; Pan, Huixian

2017-11-01

Modified sol-gel method was adopted to prepare TiO 2 , Zr-TiO 2 and N/Zr-TiO 2 composite catalyst. The as-synthesized photocatalysts were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Brunner- Emmet- Teller measurement and UV-Vis diffuse reflectance spectroscopy. And the photocatalytic performance toward CO 2 reduction was evaluated under ultraviolet light. The catalyst particles were demonstrated in the nanometer level size. When N and Zr are co-doped, on the one hand, Ti 4+ can be replaced by Zr 4  +, which leads to lattice distortion and inhibits electron-hole recombination. On the other hand, N enters into TiO 2 lattice gap to form O-Ti-N bond structure, and partial Ti 4+ are reduced to Ti 3+ . Compared with pristine TiO 2 , the specific surface area and the band gap of N/Zr-TiO 2 were improved and reduced, respectively. The N and Zr synergistically contribute to the obviously strengthened absorption intensity in visible region, as well as significantly improved photocatalytic activity. In the gas phase reactor, when the calcination temperature was 550°C, 0.125N/0.25Zr-TiO 2 composite performed the highest photocatalytic activity UV irradiation for 8 h, and the corresponding CH 4 yield was 11.837 µmol/g, which was 87.8% higher than that of pristine TiO 2 . For the visible light, the CH 4 yield was 9.003 µmol/g after 8 h irradiation, which was 83.9% higher than that of pristine TiO 2 .

Ag nanoparticle effects on the thermoluminescent properties of monoclinic ZrO2 exposed to ultraviolet and gamma radiation

NASA Astrophysics Data System (ADS)

Villa-Sanchéz, G.; Mendoza-Anaya, D.; Gutiérrez-Wing, C.; Pérez-Hernández, R.; González-Martínez, P. R.; Ángeles-Chavez, C.

2007-07-01

The goal of this work was to analyse ZrO2 in the pure state and when doped with Ag nanoparticles, by electron microscopy, x-ray diffraction and thermoluminescence methods. According to the results obtained, Ag nanoparticles did not modify the morphology or the crystalline structure of the ZrO2. The thermoluminescent (TL) response of pure ZrO2 showed two peaks, one at 334 K and the other at 417 K, when it was exposed to ultraviolet (UV) radiation, and at 342 and 397 K when gamma radiation was used. For ZrO2 impregnated with Ag nanoparticles a diminished TL intensity due to nanoparticle shielding was observed, but the glow curve shape was similar. However, when Ag nanoparticles were added during the ZrO2 synthesis, a shift of the TL peaks towards higher temperature values with reference to pure ZrO2 was observed. A linear dependence of the integrated TL signal as a function of the irradiation dose was observed in all analysed samples. It was possible to determine some kinetic parameters, such as activation energy, kinetic order and frequency factor, using the sequential quadratic programming glow curve deconvolution; it was found that these values are highly dependent on the type of radiation used. Ag nanoparticles present in ZrO2 also modified the kinetic parameters, mainly when they were added during the synthesis of ZrO2. Our results reinforce the possibilities of using pure and doped ZrO2 as an appropriate dosimetric material in radiation physics.

Effect of TiO2, ZrO2, and TiO2-ZrO2 on the performance of CuO-ZnO catalyst for CO2 hydrogenation to methanol

NASA Astrophysics Data System (ADS)

Xiao, Jie; Mao, Dongsen; Guo, Xiaoming; Yu, Jun

2015-05-01

The influence of TiO2, ZrO2, and TiO2-ZrO2 mixed oxide on the catalytic performance of CuO-ZnO catalyst in the methanol synthesis from CO2 hydrogenation was studied. The catalysts were prepared by oxalate co-precipitation method and characterized by TGA, N2 adsorption, XRD, reactive N2O adsorption, XPS, H2-TPR, H2-TPD, and CO2-TPD techniques. Characterization results reveal that all the additives improve the CuO dispersion in the catalyst body and increase the Cu surface area and adsorption capacities of CO2 and H2. The results of catalytic test reveal that the additives increase both the CO2 conversion and methanol selectivity, and TiO2-ZrO2 mixed oxide is more effective than single components of TiO2 or ZrO2. Moreover, the activity of methanol synthesis is correlated directly with CO2 adsorption capacity over the catalysts.

Influence of Zr doping on structure and morphology of TiO2 nanorods prepared using hydrothermal method

NASA Astrophysics Data System (ADS)

Muslimin, Masliana; Jumali, Mohammad Hafizuddin; Tee, Tan Sin; Beng, Lee Hock; Hui, Tan Chun; Chin, Yap Chi

2018-04-01

The aim of this work is to investigate the effect of Zr doping on TiO2 nanostructure. TiO2 nanorods thin films with different Zr-doping concentrations (6 × 10-3 M, 13 × 10-3 M and 25 × 10-3 M) were successfully prepared using a simple hydrothermal method. The structural and morphological properties of the samples were evaluated using XRD and FESEM respectively. The XRD results revealed that the TiO2 in all samples stabilized as rutile phase. The FESEM micrographs confirmed that TiO2 exist as square like nanorods with blunt tips. Although the crystallographic nature remains unchanged, the introduction of Zr has altered the surface density, structure and morphology of TiO2 which subsequently will have significant effect on its properties.

Conduction mechanism of leakage current due to the traps in ZrO2 thin film

NASA Astrophysics Data System (ADS)

Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

2009-11-01

In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

Enhanced performance of P(VDF-HFP)-based composite polymer electrolytes doped with organic-inorganic hybrid particles PMMA-ZrO2 for lithium ion batteries

NASA Astrophysics Data System (ADS)

Xiao, Wei; Wang, Zhiyan; Zhang, Yan; Fang, Rui; Yuan, Zun; Miao, Chang; Yan, Xuemin; Jiang, Yu

2018-04-01

To improve the ionic conductivity as well as enhance the mechanical strength of the gel polymer electrolyte, poly(vinylidene fluoride-hexafluoroprolene) (P(VDF-HFP))-based composite polymer electrolyte (CPE) membranes doped with the organic-inorganic hybrid particles poly(methyl methacrylate) -ZrO2 (PMMA-ZrO2) are prepared by phase inversion method, in which PMMA is successfully grafted onto the surface of the homemade nano-ZrO2 particles via in situ polymerization confirmed by FT-IR. XRD and DSC patterns show adding PMMA-ZrO2 particles into P(VDF-HFP) can significantly decrease the crystallinity of the CPE membrane. The CPE membrane doped with 5 wt % PMMA-ZrO2 particles can not only present a homogeneous surface with abundant interconnected micro-pores, but maintain its initial shape after thermal exposure at 160 °C for 1 h, in which the ionic conductivity and lithium ion transference number at room temperature can reach to 3.59 × 10-3 S cm-1 and 0.41, respectively. The fitting results of the EIS plots indicate the doped PMMA-ZrO2 particles can significantly lower the interface resistance and promote lithium ions diffusion rate. The Li/CPE-sPZ/LiCoO2 and Li/CPE-sPZ/Graphite coin cells can deliver excellent rate and cycling performance. Those results suggest the P(VDF-HFP)-based CPE doped with 5 wt % PMMA-ZrO2 particles can become an exciting potential candidate as polymer electrolyte for the lithium ion battery.

Characterizing Sintered Nano-Hydroxyapatite Sol-Gel Coating Deposited on a Biomedical Ti-Zr-Nb Alloy

NASA Astrophysics Data System (ADS)

Jafari, Hassan; Hessam, Hamid; Shahri, Seyed Morteza Ghaffari; Assadian, Mahtab; Shairazifard, Shahin Hamtaie Pour; Idris, Mohd Hasbullah

2016-03-01

In this study, sol-gel dip-coating method was used to coat nano-hydroxyapatite on specimens of Ti-14Zr-13Nb alloy for orthopedic applications. The coated specimens were sintered at three different temperatures and time spans to evaluate the impact of sintering process on microstructure, mechanical, bio-corrosion, and bioactivity properties of the coating. Field-emission scanning electron microscopy and x-ray diffraction were used to analyze the coating microstructure. Coating adhesion and mechanical performance were also investigated by scratch testing. Besides, electrochemical corrosion and immersion tests were performed in simulated body fluid to examine the sintering effect on corrosion performance and bioactivity of the coatings, respectively. The evaluations of coated specimens displayed that sintering at elevated temperatures leads to higher surface integrity and improves crystallinity of the nano-hydroxyapatite to approximately 89% which brings about distinctively enhanced mechanical properties. Similarly, it improved the corrosion rate for about 17 times through sintering at 700 °C. Immersion test proved that the coating increased the bioactivity resulted from the dissolution of calcium phosphates into the corresponding environment. It is noticeable that sintering the dip-coated specimens in the nano-hydroxyapatite improves corrosion performance and maintains bioactive behaviors as well.

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Controlling compositional homogeneity and crystalline orientation in Bi 0.8 Sb 0.2 thermoelectric thin films [Control of composition and crystallinity in Bi 0.8Sb 0.2 thermoelectric thin films].

DOE PAGES

Rochford, C.; Medlin, D. L.; Erickson, K. J.; ...

2015-12-01

Controlling alloy composition, crystalline quality, and crystal orientation is necessary to achieve high thermoelectric performance in Bi 1-xSb x thin films. These microstructural attributes are demonstrated in this letter via co-sputter deposition of Bi and Sb metals on Si/SiO 2 substrates followed by ex-situ post anneals ranging from 200 – 300 °C in forming gas with rapid cooling to achieve orientation along the trigonal axis. We show with cross-sectional transmission electron microscopy and energy-dispersive X-ray spectrometry that 50 – 95% of the Sb segregates at the surface upon exposure to air during transfer. This then forms a nanocrystalline Sb 2Omore » 3 layer upon annealing, leaving the bulk of the film primarily Bi metal which is a poor thermoelectric material. We demonstrate a SiN capping technique to eliminate Sb segregation and preserve a uniform composition throughout the thickness of the film. Given that the Bi 1-xSb x solid solution melting point depends on the Sb content, the SiN cap allows one to carefully approach but not exceed the melting point during annealing. This leads to the strong orientation along the trigonal axis and high crystalline quality desired for thermoelectric applications.« less

The photoelectronic behaviors of MoO3-loaded ZrO2/carbon cluster nanocomposite materials

NASA Astrophysics Data System (ADS)

Matsui, H.; Ishiko, A.; Karuppuchamy, S.; Hassan, M. A.; Yoshihara, M.

2012-03-01

A novel nano-sized ZrO2/carbon cluster composite materials (Ic's) were successfully obtained by the calcination of ZrCl4/starch complexes I's under an argon atmosphere. Pt- and/or MoO3-loaded ZrO2/carbon clusters composite materials were also prepared by doping Pt and/or MoO3 particles on the surface of Ic's. The surface characterization of the composite materials was carried out using transmission electron microscopy (TEM). The TEM observation of the materials showed the presence of particles with the diameters of a few nanometers, possibly Pt particles, and of 50-100 nm, possibly MoO3 particles, in the matrix. Pt- and/or MoO3-loaded ZrO2/carbon cluster composite materials show the efficient photocatalytic activity under visible light irradiation.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Fabrication of 94Zr thin target for recoil distance doppler shift method of lifetime measurement

NASA Astrophysics Data System (ADS)

Gupta, C. K.; Rohilla, Aman; Abhilash, S. R.; Kabiraj, D.; Singh, R. P.; Mehta, D.; Chamoli, S. K.

2014-11-01

A thin isotopic 94Zr target of thickness 520 μg /cm2 has been prepared for recoil distance Doppler shift method (RDM) lifetime measurement by using an electron beam deposition method on tantalum backing of 3.5 mg/cm2 thickness at Inter University Accelerator Center (IUAC), New Delhi. To meet the special requirement of smoothness of surface for RDM lifetime measurement and also to protect the outer layer of 94Zr from peeling off, a very thin layer of gold has been evaporated on a 94Zr target on a specially designed substrate holder. In all, 143 mg of 99.6% enriched 94Zr target material was utilized for the fabrication of 94Zr targets. The target has been successfully used in a recent RDM lifetime measurement experiment at IUAC.

Electrical characteristics of SiO2/ZrO2 hybrid tunnel barrier for charge trap flash memory

NASA Astrophysics Data System (ADS)

Choi, Jaeho; Bae, Juhyun; Ahn, Jaeyoung; Hwang, Kihyun; Chung, Ilsub

2017-08-01

In this paper, we investigate the electrical characteristics of SiO2/ZrO2 hybrid tunnel oxide in metal-Al2O3-SiO2-Si3N4-SiO2-silicon (MAONOS) structure in an effort to improve program and erase speed as well as retention characteristics. Inserting ZrO2 into the conventional MAONOS structure increased the programmed V th variation to 6.8 V, and increased the erased V th variation to -3.7 V at 17 MV/cm. The results can be understood in terms of reducing the Fowler-Nordheim (F/N) tunneling barrier due to high-k ZrO2 in the tunneling oxide. In addition, Zr diffusion in SiO2 caused the formation of Zr x Si1- x O2 at the interface region, which reduced the energy band gap of SiO2. The retention property of the hybrid tunnel oxide varied depending on the thickness of SiO2. For thin SiO2 less than 30 Å, the retention properties of the tunneling oxides were poor compared with those of the SiO2 only tunneling oxides. However, the hybrid tunneling oxides with SiO2 thickness thicker than 40 Å yielded improved retention behavior compared with those of the SiO2-only tunneling oxides. The detailed analysis in charge density of ZrO2 was carried out by ISPP test. The obtained charge density was quite small compared to that of the total charge density, which indicates that the inserted ZrO2 layer serves as a tunneling material rather than charge storage dielectric.

Thermal stability, optical and Photoluminescence properties of spherical Ce x Zr1‑x O2 (x = 0.05) crystalline blue-emitting nanophosphors synthesized by microwave method

NASA Astrophysics Data System (ADS)

Manjunatha, S.; Dharmaprakash, M. S.

2018-03-01

Nanocrystalline ZrO2 based material is an impressive candidate for the various functional applications owing to their ease of preparation and high thermal stability. This paper reports the synthesis, structural and optical characterization of thermally stable monodispersed CexZr1‑xO2 (x = 0.05) nanoparticles. This method is based on the fact that, microwave irradiation allows the formation of size controlled and single phase cubic ZrO2 nanoparticles containing Ce+4 as a dopant. The XRD and Rietveld analysis revealed the formation of the crystalline cubic fluorite phase. The formation of nanoparticles was confirmed by FTIR. The morphology of the nanophosphors was characterised by FESEM and TEM. The optical band gap was calculated from the UV–visible absorption spectra and was found to vary from 3.93 to 4.25 eV with calcination temperature. It shows the decrease in the optical band gap from the pristine ZrO2. The particle size was measured by using HRTEM, and the average particle size was found to be 22 nm. Under the 268 nm Ultra Violet irradiation excitation a blue emission at 443 nm was observed at room temperature. The possible luminescence mechanism of CexZr1‑xO2 nanophosphor under UV excitation is discussed.

Synthesis and characterization of ZnO:TiO{sub 2} nano composites thin films deposited on glass substrate by sol-gel spray coating technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutanto, Heri, E-mail: herisutanto@undip.ac.id; Nurhasanah, Iis; Hidayanto, Eko

In this work, (ZnO){sub x}:(TiO{sub 2}){sub 1-x} nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol–gel spray coating technique onto glass substrate. Pure TiO{sub 2} and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO{sub 2} and ZnO:TiO{sub 2} thin films at different composition have been investigated. Ultraviolet – Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employedmore » in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO{sub 2} on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.« less

Ferroelectricity in Pb 1+δZrO 3 Thin Films

DOE PAGES

Gao, Ran; Reyes-Lillo, Sebastian E.; Xu, Ruijuan; ...

2017-07-16

Antiferroelectric PbZrO 3 is being considered for a wide range of applications where the competition between centrosymmetric and noncentrosymmetric phases is important to the response. Here, we focus on the epitaxial growth of PbZrO 3 thin films and understanding the chemistry structure coupling in Pb 1+δ ZrO 3 (δ = 0, 0.1, 0.2). High-quality, single-phase Pb 1+δZrO 3 films are synthesized via pulsed-laser deposition. Though no significant lattice parameter change is observed in X-ray studies, electrical characterization reveals that while the PbZrO 3 and Pb 1.1ZrO 3 heterostructures remain intrinsically antiferroelectric, the Pb 1.2ZrO 3 heterostructures exhibit a hysteresis loopmore » indicative of ferroelectric response. Furthermore X-ray scattering studies reveal strong quarter-order diffraction peaks in PbZrO 3 and Pb 1.1ZrO 3 heterostructures indicative of antiferroelectricity, while no such peaks are observed for Pb 1.2ZrO 3 heterostructures. Density functional theory calculations suggest the large cation nonstoichiometry is accommodated by incorporation of antisite Pb-Zr defects, which drive the Pb 1.2ZrO 3 heterostructures to a ferroelectric phase with R3c symmetry. In the end, stabilization of metastable phases in materials via chemical nonstoichiometry and defect engineering enables a novel route to manipulate the energy of the ground state of materials and the corresponding material properties.« less

Zr/ZrO2 sensors for in situ measurement of pH in high-temperature and -pressure aqueous solutions.

PubMed

Zhang, R H; Zhang, X T; Hu, S M

2008-04-15

The aim of this study is to develop new pH sensors that can be used to test and monitor hydrogen ion activity in hydrothermal conditions. A Zr/ZrO2 oxidation electrode is fabricated for in situ pH measurement of high-temperature aqueous solutions. This sensor responds rapidly and precisely to pH over a wide range of temperature and pressure. The Zr/ZrO2 electrode was made by oxidizing zirconium metal wire with Na2CO3 melt, which produced a thin film of ZrO2 on its surface. Thus, an oxidation-reduction electrode was produced. The Zr/ZrO2 electrode has a good electrochemical stability over a wide range of pH in high-temperature aqueous solutions when used with a Ag/AgCl reference electrode. Measurements of the Zr/ZrO2 sensor potential against a Ag/AgCl reference electrode is shown to vary linearly with pH between temperatures 20 and 200 degrees C. The slope of the potential versus pH at high temperature is slightly below the theoretical value indicated by the Nernst equation; such deviation is attributed to the fact that the sensor is not strictly at equilibrium with the solution to be tested in a short period of time. The Zr/ZrO2 sensor can be calibrated over the conditions that exist in the natural deep-seawater. Our studies showed that the Zr/ZrO2 electrode is a suitable pH sensor for the hydrothermal systems at midocean ridge or other geothermal systems with the high-temperature environment. Yttria-stabilized zirconia sensors have also been used to investigate the pH of hydrothermal fluids in hot springs vents at midocean ridge. These sensors, however, are not sensitive below 200 degrees C. Zr/ZrO2 sensors have wider temperature range and can be severed as good alternative sensors for measuring the pH of hydrothermal fluids.

Conduction at domain walls in insulating Pb(Zr0.2 Ti0.8)O3 thin films.

PubMed

Guyonnet, Jill; Gaponenko, Iaroslav; Gariglio, Stefano; Paruch, Patrycja

2011-12-01

Domain wall conduction in insulating Pb(Zr(0.2) Ti(0.8))O(3) thin films is demonstrated. The observed electrical conduction currents can be clearly differentiated from displacement currents associated with ferroelectric polarization switching. The domain wall conduction, nonlinear and highly asymmetric due to the specific local probe measurement geometry, shows thermal activation at high temperatures, and high stability over time. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomar, Laxmi J., E-mail: laxmi-tomar86@yahoo.com; Bhatt, Piyush J.; Desai, Rahul K.

TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphitemore » coated conducting glass plate was used as counter electrode. The I – V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were found 0.71%, 1.97% and 4.58% respectively.« less

A simple method for the sonochemical synthesis of PVA/ZrO2-vitamin B1 nanocomposites: Morphology, mechanical, thermal and wettability investigations.

PubMed

Mallakpour, Shadpour; Shafiee, Elaheh

2018-01-01

Poly(vinyl alcohol) (PVA) based nanocomposites (NCs) filled by various weight percent of modified ZrO 2 nanoparticles (NPs) with vitamin B 1 (VB 1 ) up to 7wt% were fabricated via ultrasonication method then was cast to thin films. The ultrasonication was applied for the preparation and modification process asan easy, safe and fast method. Ultrasonic was responsible for great homogeneities of NPs into PVA matrix, which could not be achieved by mechanical or magnetically stirring. The creation of polymer NCs and changes in the structural properties were examined by X-ray diffraction. FT-IR spectroscopy indicated the possible interactions of the ZrO 2 -VB 1 NPs with the PVA backbones and also, existence of absorption bands related to PVA and ZrO 2 NPs in the NC structures. The distribution of nano-fillers and uniform morphology of the NCs showed that the ZrO 2 -VB 1 NPs were homogeneously dispersed in the polymer matrix in the nanosized scale. UV-Vis analysis shown that the the optical absorption were improved by evolution of ZrO 2 -VB 1 NPs content. The tensile strength of PVA film was increased significantly with increasing the ZrO 2 -VB 1 NPs content. Thermal gravimetric analysis confirmed that NCs displayed higher thermal stability than the pristine PVA. Also, water contact angle analysis indicated that the hydrophilicity of NC films was enhanced with increasing the concentration of ZrO 2 NPs. Copyright © 2017 Elsevier B.V. All rights reserved.

Formation and characterization of preferred oriented perovskite thin films on single-crystalline substrates

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Chen, Cheng-Chiang; Hsiung Chang, Sheng; Lee, Kuan-Lin; Tseng, Zong-Liang; Chen, Sheng-Hui; Kuo, Hao-Chung

2018-06-01

Three single-crystalline (Al2O3, GaN/Al2O3 and InAs) substrates are used to assist the formation of crystallographically preferred oriented CH3NH3PbI3 (MAPbI3) thin films. The estimation of the lattice mismatch at the MAPbI3/substrate interface and water-droplet contact angle experiments indicate that the formation of a preferred oriented MAPbI3 thin film is induced by the single-crystalline substrate and is insensitive to the surface wettibility of the substrate. Moreover, the experimental results suggest that the lattice mismatch at the MAPbI3/single-crystalline semiconductor interface can strongly influence the photovoltaic performance of tandem solar cells.

Grain growth and pore coarsening in dense nano-crystalline UO 2+x fuel pellets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Tiankai; Mo, Kun; Yun, Di

Dense nano-sized UO 2+x pellets are synthesized by spark plasma sintering with controlled stoichiometries (UO 2.03 and UO 2.11) and grain sizes (~100 nm), and subsequently isothermally annealed to study their effects on grain growth kinetics and microstructure stability. The grain growth kinetics is determined and analyzed focusing on the interaction between grain boundary migration, pore growth and coalescence. Grains grow much bigger in nano-sized UO 2.11 than UO 2.03 upon thermal annealing, consistent with the fact that hyper-stoichiometric UO 2+x is beneficial for sintering due to enhanced U ion diffusion from excessive O ion interstitials. The activation energies ofmore » the grain growth for UO 2.03 and UO 2.11 are determined as ~1.0 and 1.3~2.0 eV, respectively. As compared with the micron-sized UO 2 in which volumetric diffusion dominates the grain coarsening with an activation energy of ~3.0 eV, the enhanced grain growth kinetics in nano-sized UO 2+x suggests that grain boundary diffusion controls grain growth. Lastly, the higher activation energy of more hyper-stoichiometric nano-sized UO 2.11 may be attributed to the excessive O interstitials pinning grain boundary migration.« less

Grain growth and pore coarsening in dense nano-crystalline UO 2+x fuel pellets

DOE PAGES

Yao, Tiankai; Mo, Kun; Yun, Di; ...

2017-03-25

Dense nano-sized UO 2+x pellets are synthesized by spark plasma sintering with controlled stoichiometries (UO 2.03 and UO 2.11) and grain sizes (~100 nm), and subsequently isothermally annealed to study their effects on grain growth kinetics and microstructure stability. The grain growth kinetics is determined and analyzed focusing on the interaction between grain boundary migration, pore growth and coalescence. Grains grow much bigger in nano-sized UO 2.11 than UO 2.03 upon thermal annealing, consistent with the fact that hyper-stoichiometric UO 2+x is beneficial for sintering due to enhanced U ion diffusion from excessive O ion interstitials. The activation energies ofmore » the grain growth for UO 2.03 and UO 2.11 are determined as ~1.0 and 1.3~2.0 eV, respectively. As compared with the micron-sized UO 2 in which volumetric diffusion dominates the grain coarsening with an activation energy of ~3.0 eV, the enhanced grain growth kinetics in nano-sized UO 2+x suggests that grain boundary diffusion controls grain growth. Lastly, the higher activation energy of more hyper-stoichiometric nano-sized UO 2.11 may be attributed to the excessive O interstitials pinning grain boundary migration.« less

Investigation of ZrO x /ZrC-ZrN/Zr thin-film structural evolution and their degradation using X-ray diffraction and Raman spectrometry

NASA Astrophysics Data System (ADS)

Usmani, B.; Vijay, V.; Chhibber, R.; Dixit, A.

2016-11-01

The thin-film structures of DC/FR magnetron-sputtered ZrO x /ZrC-ZrN/Zr tandem solar-selective coatings are investigated using X-ray diffraction and room-temperature Raman spectroscopic measurements. These studies suggest that the major contribution is coming from h-ZrN0.28, c-ZrC, h-Zr3C2 crystallographic phases in ZrN-ZrC absorber layer, in conjunction with mixed ZrO x crystallographic phases. The change in structure for thermally annealed samples has been examined and observed that cubic and hexagonal ZrO x phase converted partially into tetragonal and monoclinic ZrO x phases, whereas hexagonal and cubic ZrN phases, from absorber layer, have not been observed for these thermally treated samples in air. These studies suggest that thermal treatment may lead to the loss of ZrN phase in absorber, degrading the thermal response for the desired wavelength range in open ambient conditions in contrast to vacuum conditions.

FAST TRACK COMMUNICATION: Deposition temperature effect on electrical properties and interface of high-k ZrO2 capacitor

NASA Astrophysics Data System (ADS)

Kim, Joo-Hyung; Ignatova, Velislava A.; Heitmann, Johannes; Oberbeck, Lars

2008-09-01

The electrical characteristics, i.e. leakage current and capacitance, of ZrO2 based metal-insulator-metal structures, grown at 225, 250 and 275 °C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 °C deposition temperature, while the highest dielectric constant (k ~ 43) was measured for the samples grown at 275 °C, most probably due to the formation of tetragonal/cubic phases in the ZrO2 layer. We have shown that the main leakage current of these ZrO2 capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 °C deposition temperature the oxygen content at and beyond the ZrO2/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiOxNy interface layer. At and above 275 °C the ZrO2 layer changes its structure and becomes crystalline as proven by XRD analysis.

Near band edge emission characteristics of sputtered nano-crystalline ZnO films

NASA Astrophysics Data System (ADS)

Kunj, Saurabh; Sreenivas, K.

2016-05-01

Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

Comparing the Thermodynamic Behaviour of Al(1)+ZrO2(s) to Al(1)+Al2O3(s)

NASA Technical Reports Server (NTRS)

Copland, Evan

2004-01-01

In an effort to better determine the thermodynamic properties of Al(g) and Al2O(g). the vapor in equilibrium with Al(l)+ZrO2(s) was compared to the vapor in equilibrium with Al(l)+Al2O3(s) over temperature range 1197-to-1509K. The comparison was made directly by Knudsen effusion-cell mass spectrometry with an instrument configured for a multiple effusion-cell vapor source (multi-cell KEMS). Second law enthalpies of vaporization of Al(g) and Al2O(g) together with activity measurements show that Al(l)+ZrO2(s) is thermodynamically equivalent to Al(l)+Al2O3(s), indicating Al(l) remained pure and Al2O3(s) was present in the ZrO2-cell. Subsequent observation of the Al(l)/ZrO2 and vapor/ZrO2 interfaces revealed a thin Al2O3-layer had formed, separating the ZrO2-cell from Al(l) and Al(g)+Al2O(g), effectively transforming it into an Al2O3 effusion-cell. This behavior agrees with recent observations made for Beta-NiAl(Pt) alloys measured in ZrO2 effusion-cell.

A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

NASA Astrophysics Data System (ADS)

Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

2015-02-01

Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

Investigation of optical properties and local structure of Gd3+ doped nano-crystalline GeSe2

NASA Astrophysics Data System (ADS)

Hantour, Hanan Hassan

2017-04-01

Pure and Gd-doped nano-crystalline GeSe2 were prepared by the melt-quenching technique. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41 nm for GeSe2 and 48 nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1 and 4.8 eV for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ˜202 cm-1 with broad line width. Also, well identified low intensity (υ < 145 cm-1) and high intensity (υ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its full width at half maximum (FWHM) is reduced by ˜50% accompanied by an intensity increase of about ˜17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ˜604 nm. This band is split into two separated bands with higher intensity. The detected emission bands at wavelength >650 nm are assigned to transmission from 6GJ to the different 6PJ terms.

Ion-enhanced chemical etching of ZrO2 in a chlorine discharge

NASA Astrophysics Data System (ADS)

Sha, Lin; Cho, Byeong-Ok; Chang, Jane P.

2002-09-01

Chlorine plasma is found to chemically etch ZrO2 thin films in an electron cyclotron resonance reactor, and the etch rate scaled linearly with the square root of ion energy at high ion energies with a threshold energy between 12-20 eV. The etching rate decreased monotonically with increasing chamber pressures, which corresponds to reduced electron temperatures. Optical emission spectroscopy and quadrupole mass spectrometry were used to identify the reaction etching products. No Zr, O, or ZrCl were detected as etching products, but highly chlorinated zirconium compounds (ZrCl2, ZrCl3, and ZrCl4) and ClO were found to be the dominant etching products. ZrCl3 was the dominant etching products at low ion energies, while ZrCl4 became dominant at higher ion energies. This is consistent with greater momentum transfer and enhanced surface chlorination, as determined by x-ray photoelectron spectroscopy, at increased ion energies. Several ion-enhanced chemical reactions are proposed to contribute to the ZrO2 etching. copyright 2002 American Vacuum Society.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Mass transport and crystal growth of the mixed ZrS2-ZrSe2 system

NASA Technical Reports Server (NTRS)

Wiedemeier, Heribert; Goldman, Howard

1986-01-01

The solid solubility of the ZrS2-ZrSe2 system was reinvestigated by annealing techniques to establish the relationship between composition and lattice parameters. Mixed crystals of ZrS(2x)Se2(1-x) for selected compositions of the source material were grown by chemical vapor transport and characterized by X-ray diffraction and microscopic methods. The mass transport rates and crystal growth of ZrSSe were investigated and compared with those of other compositions. The mass fluxes of the mixed system showed an increase with increasing selenium content. The transport products were richer in ZrSe2 than the residual source materials when the ZrSe2 content of the starting materials was greater than 50 mol.-pct. The mass transport rates revealed an increasing mass flux with pressure.

Growth, structure and stability of sputter-deposited MoS2 thin films.

PubMed

Kaindl, Reinhard; Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS 2 ) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS 2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS 2 films by magnetron sputtering. MoS 2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO 2 /Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS 2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS 2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS 2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS 2 thin films are discussed. A potential application for such conductive nanostructured MoS 2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS 2 films.

Growth, structure and stability of sputter-deposited MoS2 thin films

PubMed Central

Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films. PMID:28685112

Structural morphology, upconversion luminescence and optical thermometric sensing behavior of Y2O3:Er(3+)/Yb(3+) nano-crystalline phosphor.

PubMed

Joshi, C; Dwivedi, A; Rai, S B

2014-08-14

Infrared-to-visible upconverting rare earths Er(3+)/Yb(3+) co-doped Y2O3 nano-crystalline phosphor samples have been prepared by solution combustion method followed by post-heat treatment at higher temperatures. A slight increase in average crystallite size has been found on calcinations verified by X-ray analysis. Transmission electron microscopy (TEM) confirms the nano-crystalline nature of the as-prepared and calcinated samples. Fourier transform infrared (FTIR) analysis shows the structural changes in as-prepared and calcinated samples. Upconversion and downconversion emission recorded using 976 and 532 nm laser sources clearly demonstrates a better luminescence properties in the calcinated samples as compared to as-prepared sample. Upconversion emission has been quantified in terms of standard chromaticity diagram (CIE) showing a shift in overall upconversion emission of as-prepared and calcinated samples. Temperature sensing behaviour of this material has also been investigated by measurement of fluorescence intensity ratio (FIR) of various signals in green emission in the temperature range of 315 to 555 K under 976 nm laser excitation. Copyright © 2014 Elsevier B.V. All rights reserved.

Synthesis of Nano-Crystalline Gamma-TiAl Materials

NASA Technical Reports Server (NTRS)

Hales, Stephen J.; Vasquez, Peter

2003-01-01

One of the principal problems with nano-crystalline materials is producing them in quantities and sizes large enough for valid mechanical property evaluation. The purpose of this study was to explore an innovative method for producing nano-crystalline gamma-TiAl bulk materials using high energy ball milling and brief secondary processes. Nano-crystalline powder feedstock was produced using a Fritsch P4(TM) vario-planetary ball mill recently installed at NASA-LaRC. The high energy ball milling process employed tungsten carbide tooling (vials and balls) and no process control agents to minimize contamination. In a collaborative effort, two approaches were investigated, namely mechanical alloying of elemental powders and attrition milling of pre-alloyed powders. The objective was to subsequently use RF plasma spray deposition and short cycle vacuum hot pressing in order to effect consolidation while retaining nano-crystalline structure in bulk material. Results and discussion of the work performed to date are presented.

Structural and magnetic investigations of single-crystalline neodymium zirconate pyrochlore Nd2Zr2O7

NASA Astrophysics Data System (ADS)

Hatnean, M. Ciomaga; Lees, M. R.; Petrenko, O. A.; Keeble, D. S.; Balakrishnan, G.; Gutmann, M. J.; Klekovkina, V. V.; Malkin, B. Z.

2015-05-01

We report structural and magnetic properties studies of large high-quality single crystals of the frustrated magnet Nd2Zr2O7 . Powder x-ray diffraction analysis confirms that Nd2Zr2O7 adopts the pyrochlore structure. Room-temperature x-ray diffraction and time-of-flight neutron-scattering experiments show that the crystals are stoichiometric in composition with no measurable site disorder. The temperature dependence of the magnetic susceptibility shows no magnetic ordering at temperatures down to 0.5 K. Fits to the magnetic susceptibility data using a Curie-Weiss law reveal a ferromagnetic coupling between the Nd moments. Magnetization versus field measurements show a local Ising anisotropy along the <111 > axes of the Nd3 + ions in the ground state. Specific heat versus temperature measurements in zero applied magnetic field indicate the presence of a thermal anomaly below T ˜7 K, but no evidence of magnetic ordering is observed down to 0.5 K. The experimental temperature dependence of the single-crystal bulk dc susceptibility and isothermal magnetization are analyzed using crystal field theory and the crystal field parameters and exchange coupling constants determined.

Impact of the oxygen defects and the hydrogen concentration on the surface of tetragonal and monoclinic ZrO2 on the reduction rates of stearic acid on Ni/ZrO2.

PubMed

Foraita, Sebastian; Fulton, John L; Chase, Zizwe A; Vjunov, Aleksei; Xu, Pinghong; Baráth, Eszter; Camaioni, Donald M; Zhao, Chen; Lercher, Johannes A

2015-02-02

The role of the specific physicochemical properties of ZrO2 phases on Ni/ZrO2 has been explored with respect to the reduction of stearic acid. Conversion on pure m-ZrO2 is 1.3 times more active than on t-ZrO2 , whereas Ni/m-ZrO2 is three times more active than Ni/t-ZrO2 . Although the hydrodeoxygenation of stearic acid can be catalyzed solely by Ni, the synergistic interaction between Ni and the ZrO2 support causes the variations in the reaction rates. Adsorption of the carboxylic acid group on an oxygen vacancy of ZrO2 and the abstraction of the α-hydrogen atom with the elimination of the oxygen atom to produce a ketene is the key to enhance the overall rate. The hydrogenated intermediate 1-octadecanol is in turn decarbonylated to heptadecane with identical rates on all catalysts. Decarbonylation of 1-octadecanol is concluded to be limited by the competitive adsorption of reactants and intermediate. The substantially higher adsorption of propionic acid demonstrated by IR spectroscopy and the higher reactivity to O2 exchange reactions with the more active catalyst indicate that the higher concentration of active oxygen defects on m-ZrO2 compared to t-ZrO2 causes the higher activity of Ni/m-ZrO2 . © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetotransport properties of microstructured AlCu2Mn Heusler alloy thin films in the amorphous and crystalline phase

NASA Astrophysics Data System (ADS)

Barzola-Quiquia, José; Stiller, Markus; Esquinazi, Pablo D.; Quispe-Marcatoma, Justiniano; Häussler, Peter

2018-06-01

We have studied the resistance, magnetoresistance and Hall effect of AlCu2Mn Heusler alloy thin films prepared by flash evaporation on substrates cooled at 4He liquid temperature. The as-prepared samples were amorphous and were annealed stepwise to induce the transformation to the crystalline phase. The amorphous phase is metastable up to above room temperature and the transition to the crystalline phase was observed by means of resistance measurements. Using transmission electron microscopy, we have determined the structure factor S (K) and the pair correlation function g (r) , both results indicate that amorphous AlCu2Mn is an electronic stabilized phase. The X-ray diffraction of the crystallized film shows peaks corresponding to the well ordered L21 phase. The resistance shows a negative temperature coefficient in both phases. The magnetoresistance (MR) is negative in both phases, yet larger in the crystalline state compared to the amorphous one. The magnetic properties were studied further by anomalous Hall effect measurements, which were present in both phases. In the amorphous state, the anomalous Hall effect disappears at temperatures below 175 K and is present up to above room temperature in the case of crystalline AlCu2Mn.

Effect of temperature on optical properties of PMMA/SiO2 composite thin film

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-05-01

Effect of temperature on PMMA/SiO2 composites thin films were investigated. Nanocomposite flexible thin films of 60 µm thicknesses with different loading of SiO2 nanoparticles were prepared using solution casting method. SEM images show that SiO2 nanoparticles are distributed uniformly in PMMA matrix without any lumps on the surface, and PMMA/SiO2 nano composite thin films had a smoother and regular morphology. UV-Vis and optical band gap measurements revealed that both the concentration of SiO2 nanoparticles and temperature affect the optical properties of the composite thin film in comparison to the pure PMMA film.

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

NASA Astrophysics Data System (ADS)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

Unusually high critical current of clean P-doped BaFe2As2 single crystalline thin film

NASA Astrophysics Data System (ADS)

Kurth, F.; Tarantini, C.; Grinenko, V.; Hänisch, J.; Jaroszynski, J.; Reich, E.; Mori, Y.; Sakagami, A.; Kawaguchi, T.; Engelmann, J.; Schultz, L.; Holzapfel, B.; Ikuta, H.; Hühne, R.; Iida, K.

2015-02-01

Microstructurally clean, isovalently P-doped BaFe2As2 (Ba-122) single crystalline thin films have been prepared on MgO (001) substrates by molecular beam epitaxy. These films show a superconducting transition temperature (Tc) of over 30 K although P content is around 0.22, which is lower than the optimal one for single crystals (i.e., 0.33). The enhanced Tc at this doping level is attributed to the in-plane tensile strain. The strained film shows high transport self-field critical current densities (Jc) of over 6 MA/cm2 at 4.2 K, which are among the highest for Fe based superconductors (FeSCs). In-field Jc exceeds 0.1 MA/cm2 at μ 0 H = 35 T for H ‖ a b and μ 0 H = 18 T for H ‖ c at 4.2 K, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar Tc. Structural investigations reveal no defects or misoriented grains pointing to strong pinning centers. We relate this unexpected high Jc to a strong enhancement of the vortex core energy at optimal Tc, driven by in-plane strain and doping. These unusually high Jc make P-doped Ba-122 very favorable for high-field magnet applications.

Phenol-photodegradation on ZrO2. Enhancement by semiconductors.

PubMed

Karunakaran, C; Dhanalakshmi, R; Gomathisankar, P

2012-06-15

On illumination with light of wavelength 365 nm phenol undergoes degradation on the surface of ZrO(2). The rate of degradation enhances linearly with the concentration of phenol and also the light intensity but decreases with increase of pH. The photonic efficiency of degradation is higher with illumination at 254 nm than with 365 nm. The diffuse reflectance spectral study suggests phenol-sensitized activation of ZrO(2) with 365 nm light. TiO(2), Fe(2)O(3), CuO, ZnO, ZnS, Nb(2)O(5) and CdO particles enhance the photodegradation on ZrO(2), indicating inter-particle charge-transfer. Determination of size of the particles under suspension, by light scattering technique, shows agglomeration of particles supporting the proposition of charge-transfer between particles. Copyright © 2012 Elsevier B.V. All rights reserved.

Dip-coated ZrO2-Y2O3 coatings tested in molten salts for CSP applications

NASA Astrophysics Data System (ADS)

Pérez, Francisco Javier; Encinas-Sánchez, Víctor; Lasanta, María Isabel; de Miguel, María Teresa; García-Martín, Gustavo

2017-06-01

In the present work, the behaviour of ZrO2 - Y2O3 coatings in contact with molten salts at 500 °C has been studied. The coatings were prepared by sol-gel and deposited by dip-coating on AISI 304 specimens previously prepared by sanding and polishing. The behaviour in contact with molten salt was studied through static corrosion tests by the immersion of the coated samples in an alkali-nitrate mixture with a composition of 60 wt.% NaNO3/40 wt.% KNO3 (commonly known as Solar Salt). Prior to test, the deposited coatings were characterized using Scanning Electron Microscopy and X-Ray Diffraction, showing a compacted, homogeneous and uniform aspect and t-YSZ as main component. After corrosion tests, the samples were characterized via gravimetric, Scanning Electron Microscopy and X-Ray Diffraction. The results show a good behaviour of the coated samples compared with the bare coupon samples. However after 1000 h of testing m-ZrO2 appears in the composition,. At this preliminary study, results confirm the suitability of ZrO2 - Y2O3 coatings in solar applications after those working hours, although it is necessary to optimize the coating and study its behaviour at longer times.

Structural and magnetic properties of Ni0.8M0.2Fe2O4 (M = Cu, Co) nano-crystalline ferrites

NASA Astrophysics Data System (ADS)

Vijaya Babu, K.; Satyanarayana, G.; Sailaja, B.; Santosh Kumar, G. V.; Jalaiah, K.; Ravi, M.

2018-06-01

Nano-crystalline nickel ferrites are interesting materials due to their large physical and magnetic properties. In the present work, two kinds of spinel ferrites Ni0.8M0.2Fe2O4 (M = Cu, Co) are synthesized by using sol-gel auto-combustion method and the results are compared with NiFe2O4. The structural properties of synthesized ferrites are determined by using X-ray powder diffraction; scanning electron microscope and Fourier transform infrared spectroscopy. The cation distribution obtained from X-ray diffraction show that cobalt/copper occupies only tetrahedral site in spinel lattice. The lattice constant increases with the substitution of cobalt/copper. The structural parameters like bond lengths, tetrahedral and octahedral edges have been varied with the substitution. The microstructural study is carried out by using SEM technique and the average grain size is increased with nickel ferrite. The initial permeability (μi) is improving with the substitution. The observed g-value from ESR is approximately equal to standard value.

Research on self-propagating high temperature synthesis prepared ZrC-ZrB2 composite ceramic

NASA Astrophysics Data System (ADS)

Yong, Cheng; Xunjia, Su; Genliang, Hou; YaKun, Xing

2013-03-01

ZrC-ZrB2 composite ceramic material is prepared by self-propagating high temperature synthesis, using Zr powders, CrO2 powders and Al powders as raw materials. Samples are studied by XRD and SEM, the results show that: ZrC-ZrB2 composite ceramic is attained after self-propagating high-temperature reaction, with Zr+ B4C as the main reactive system, and which is added respectively different content (CrO3 + Al) system. The study finds that the ceramic composite products are mainly composed of ZrC and ZrB2 phase, and other subphase. Compared to the main reactive system composite ceramic, composite ceramic grains grow up obviously, after introduction of the highly exothermic system (CrO3 + Al) in the main reactive system, and with the gradual increase of the content (CrO3 + Al).

Corrosion Behavior and Microhardness of Ni-P-SiO2-Al2O3 Nano-composite Coatings on Magnesium Alloy

NASA Astrophysics Data System (ADS)

Sadreddini, S.; Rahemi Ardakani, S.; Rassaee, H.

2017-05-01

In the present work, nano-composites of Ni-P-SiO2-Al2O3 were coated on AZ91HP magnesium alloy. The surface morphology of the nano-composite coating was studied by field emission scanning electron microscopy (FESEM). The amount of SiO2 in the coating was determined by energy-dispersive analysis of x-ray (EDX), and the crystalline structure of the coating was examined by x-ray diffractometer (XRD). All the experiments concerning the corrosion behavior of the coating carried out in 3.5 wt.% NaCl solution and evaluated by electrochemical impedance spectroscopy (EIS) and polarization technique. The results showed that an incorporation of SiO2 and Al2O3 in Ni-P coating at the SiO2 concentration of 10 g/Land 14 g/LAl2O3 led to the lowest corrosion rate ( i corr = 1.3 µA/cm2), the most positive E corr and maximum microhardness (496 VH). Furthermore, Ni-P-SiO2-Al2O3 nano-composite coating possesses less porosity than that in Ni-P coating, resulting in improving corrosion resistance.

Improvement of perpendicular anisotropy of columnar FePt-ZrO2-C films with FePt insert layer

NASA Astrophysics Data System (ADS)

Dong, Kaifeng; Mo, Wenqin; Jin, Fang; Song, Junlei; Cheng, Weimin; Wang, Haiwei

2018-05-01

The effects of various thicknesses of FePt insert layer on the microstructure and magnetic properties of FePt-ZrO2-C thin films have been investigated. It is found that with inserting 0.4 nm FePt films between the TiON intermediate layer and FePt-ZrO2-C layer, the perpendicular anisotropy indicated by Hc⊥/Hc//ratio would increase from 4 to 13.1, suggesting the perpendicular anisotropy could be improved a lot with using FePt insert layer. Simultaneously, the FePt grains of FePt-ZrO2-C thin films maintained columnar structure and the grain isolation could also be improved in a certain degree. With further increase of the FePt insert layer thickness, although the perpendicular anisotropy was still larger than that without FePt insert layer, the grain size of the FePt-ZrO2-C films would increase and the isolation would be deteriorated.

Porous Ceramic Composite ZrO2(MgO)-MgO for Osteoimplantology

NASA Astrophysics Data System (ADS)

Buyakov, A. S.; Kulkov, S. N.

2017-02-01

Pore and crystalline structure, biocompatibility of ceramic composite ZrO2(MgO)-MgO were studied. The main mechanical characteristics were determined and it has been shown that compression strength directly depends on microstresses obtained from X-ray data. In-vitro studies of mesenchymal stromal stem cells (MMSC), cultivated on material surface are shown that cell proliferation and differentiation of MMSC goes throw osteogenic type.

Fabrication of a pure TiO2 thin film using a self-polymeric titania nano-sol and its properties.

PubMed

Park, Won-Kyu; Song, Jeong-Hwan; Kim, Soo-Ryong; Kim, Tae-Hyun; Iwasaki, Mitusnobo

2012-02-01

A pure TiO2 thin film without adding any organic binder was fabricated by using a self-polymeric titania nano-sol (14 mass%), which was prepared by the acid peptization method. The particle size distribution in the 14 mass% TiO2 sol, in which almost of particles had a size below 10.2 nm and the crystal phase confirmed by X-ray diffraction analysis was anatase. The diluted nano-sol had a capability to form a thin film at a low temperature (100-400 degrees C) on the slide glass by dipping method. The average thickness of a coating film was measured to be about 0.25-0.30 microm. A coated film had a high refractive index over 1.88 at least irrespective of the heat-treatment even at room temperature drying and showed a super-hydrophilicity (< 5 degrees) after 20 minutes under Ultra Violet light irradiation, and it sustained in the darkness during a long period over 7 days depending on the heat-treatment conditions. Atomic Force Microscopic observation shows that the morphology of a heat-treated film had a relationship with the long-term hydrophilicity in the darkness.

Sunlight activated anodic freestanding ZrO2 nanotube arrays for Cr(VI) photoreduction.

PubMed

Bashirom, Nurulhuda; Tan, Wai Kian; Go, Kawamura; Matsuda, Atsunori; Abdul Razak, Khairunisak; Lockman, Zainovia

2018-06-14

Visible-light-active freestanding zirconia (ZrO2) nanotube (FSZNT) arrays were fabricated by a facile electrochemical anodization method in fluoride containing ethylene glycol electrolyte added to it 1 vol.% of potassium carbonate (K2CO3) at 60 V for 1 h. Poor adhesion at metal|oxide interface was induced by K2CO3 leading to formation of the FSZNT flakes. The effect of crystal structures of FSZNTs e.g., amorphous, amorphous/tetragonal, and tetragonal/monoclinic was investigated towards the photocatalytic reduction of 10 ppm hexavalent chromium, Cr(VI) at pH 2 under sunlight. The results demonstrate the amorphous FSZNTs exhibited the highest Cr(VI) removal efficiency than the crystalline FSZNTs (95 % versus 33 % after 5 h). The high photocatalytic activity of the amorphous FSZNTs can be attributed to enhanced Cr(VI) adsorption, high visible light absorption, and better charge carriers separation. The low photocatalytic activity of the crystalline FSZNTs annealed at 500 °C was mainly attributed to poor Cr(VI) adsorption, low visible light absorption, and less photoactive monoclinic-ZrO2. © 2018 IOP Publishing Ltd.

Amorphization of nanocrystalline monoclinic ZrO2 by swift heavy ion irradiation.

PubMed

Lu, Fengyuan; Wang, Jianwei; Lang, Maik; Toulemonde, Marcel; Namavar, Fereydoon; Trautmann, Christina; Zhang, Jiaming; Ewing, Rodney C; Lian, Jie

2012-09-21

Bulk ZrO(2) polymorphs generally have an extremely high amorphization tolerance upon low energy ion and swift heavy ion irradiation in which ballistic interaction and ionization radiation dominate the ion-solid interaction, respectively. However, under very high-energy irradiation by 1.33 GeV U-238, nanocrystalline (40-50 nm) monoclinic ZrO(2) can be amorphized. A computational simulation based on a thermal spike model reveals that the strong ionizing radiation from swift heavy ions with a very high electronic energy loss of 52.2 keV nm(-1) can induce transient zones with temperatures well above the ZrO(2) melting point. The extreme electronic energy loss, coupled with the high energy state of the nanostructured materials and a high thermal confinement due to the less effective heat transport within the transient hot zone, may eventually be responsible for the ionizing radiation-induced amorphization without transforming to the tetragonal polymorph. The amorphization of nanocrystalline zirconia was also confirmed by 1.69 GeV Au ion irradiation with the electronic energy loss of 40 keV nm(-1). These results suggest that highly radiation tolerant materials in bulk forms, such as ZrO(2), may be radiation sensitive with the reduced length scale down to the nano-metered regime upon irradiation above a threshold value of electronic energy loss.

Growth temperature modulated phase evolution and functional characteristics of high quality Pb1-x Lax (Zr0.9Ti0.1)O3 thin films

NASA Astrophysics Data System (ADS)

Kumar, Anuj; Pawar, Shuvam; Singh, Kirandeep; Kaur, Davinder

2018-05-01

In this study, we have reported the influence of growth temperature on perovskite phase evolution in sputtered deposited high quality Pb1-x Lax (Zr0.9 Ti0.1)O3 (PLZT) thin films on Pt/Ti/SiO2/Si substrate. PLZT thin films were fabricated at substrate temperature ranging from 400 to 700 °C. We have investigated the structural, dielectric, ferroelectric and leakage current characteristics of these thin films. XRD patterns reveal that 600 °C is the optimized temperature to deposit highly (110) oriented perovskite phase PLZT thin film. The further increase in temperature (700 °) causes reappearance of additional peaks corresponding to lead deficient pyrochlore phase. All PLZT thin films show decrease in dielectric constant with frequency. However, PLZT thin film fabricated at 600 °C displays dielectric constant ˜532 at 1 MHz frequency which is relatively higher than other deposited thin films. The P-E loops of these PLZT thin films exhibit strong dependence on deposition temperature. The pure perovskite PZLT thin film shows saturation polarization of ˜51.2µC/cm2 and coercive field (2Ec) ˜67.85 kV/cm. These high quality PLZT thin films finds their applications in non-volatile memory and nano-electro-mechanical systems (NEMS).

Impact of the oxygen defects and the hydrogen concentration on the surface of tetragonal and monoclinic ZrO2 on the reduction rates of stearic acid on Ni/ZrO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foraita, Sebastian D.; Fulton, John L.; Chase, Zizwe A.

2015-02-02

The effect of the physicochemical properties of ZrO2 phases on the activity of Ni/ZrO2 catalysts for hydrodeoxygenation of stearic acid are described. A synergistic interaction between Ni and ZrO2 support was found. The effect is greatest for the monoclinic phase of ZrO2.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Influence of N2 partial pressure on structural and microhardness properties of TiN/ZrN multilayers deposited by Ar/N2 vacuum arc discharge

NASA Astrophysics Data System (ADS)

Naddaf, M.; Abdallah, B.; Ahmad, M.; A-Kharroub, M.

2016-08-01

The influence of N2 partial pressure on structural, mechanical and wetting properties of multilayered TiN/ZrN thin films deposited on silicon substrates by vacuum arc discharge of (N2 + Ar) gas mixtures is investigated. X-ray diffraction (XRD) results show that the average texturing coefficient of (1 1 1) orientation and the grain size of both TiN and ZrN individual layers increase with increasing the N2 partial pressure. The Rutherford back scattering (RBS) measurements and analysis reveal that incorporation of the nitrogen in the film increases with increasing the N2 partial pressure and both TiN and ZrN individual layers have a nitrogen over-stoichiometry for N2 partial pressure ⩾50%. The change in the film micro-hardness is correlated to the changes in crystallographic texture, grain size, stoichiometry and the residual stress in the film as a function of the N2 partial pressure. In particular, stoichiometry of ZrN and TiN individual is found to play the vital role in determining the multilayer hardness. The multilayer film deposited at N2 partial pressure of 25% has the best stoichiometric ratio of both TiN and ZrN layers and the highest micro-hardness of about 32 GPa. In addition, water contact angle (WCA) measurements and analysis show a decrease in the work of adhesion on increasing the N2 partial pressure.

TiS2 and ZrS2 single- and double-wall nanotubes: first-principles study.

PubMed

Bandura, Andrei V; Evarestov, Robert A

2014-02-15

Hybrid density functional theory has been applied for investigations of the electronic and atomic structure of bulk phases, nanolayers, and nanotubes based on titanium and zirconium disulfides. Calculations have been performed on the basis of the localized atomic functions by means of the CRYSTAL-2009 computer code. The full optimization of all atomic positions in the regarded systems has been made to study the atomic relaxation and to determine the most favorable structures. The different layered and isotropic bulk phases have been considered as the possible precursors of the nanotubes. Calculations on single-walled TiS2 and ZrS2 nanotubes confirmed that the nanotubes obtained by rolling up the hexagonal crystalline layers with octahedral 1T morphology are the most stable. The strain energy of TiS2 and ZrS2 nanotubes is small, does not depend on the tube chirality, and approximately obeys to D(-2) law (D is nanotube diameter) of the classical elasticity theory. It is greater than the strain energy of the similar TiO2 and ZrO2 nanotubes; however, the formation energy of the disulfide nanotubes is considerably less than the formation energy of the dioxide nanotubes. The distance and interaction energy between the single-wall components of the double-wall nanotubes is proved to be close to the distance and interaction energy between layers in the layered crystals. Analysis of the relaxed nanotube shape using radial coordinate of the metal atoms demonstrates a small but noticeable deviation from completely cylindrical cross-section of the external walls in the armchair-like double-wall nanotubes. Copyright © 2013 Wiley Periodicals, Inc.

Study of structural and magnetic properties of melt spun Nd2Fe13.6Zr0.4B ingot and ribbon

NASA Astrophysics Data System (ADS)

Amin, Muhammad; Siddiqi, Saadat A.; Ashfaq, Ahmad; Saleem, Murtaza; Ramay, Shahid M.; Mahmood, Asif; Al-Zaghayer, Yousef S.

2015-12-01

Nd2Fe13.6Zr0.4B hard magnetic material were prepared using arc-melting technique on a water-cooled copper hearth kept under argon gas atmosphere. The prepared samples, Nd2Fe13.6Zr0.4B ingot and ribbon are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) for crystal structure determination and morphological studies, respectively. The magnetic properties of the samples have been explored using vibrating sample magnetometer (VSM). The lattice constants slightly increased due to the difference in the ionic radii of Fe and that of Zr. The bulk density decreased due to smaller molar weight and low density of Zr as compared to that of Fe. Ingot sample shows almost single crystalline phase with larger crystallite sizes whereas ribbon sample shows a mixture of amorphous and crystalline phases with smaller crystallite sizes. The crystallinity of the material was highly affected with high thermal treatments. Magnetic measurements show noticeable variation in magnetic behavior with the change in crystallite size. The sample prepared in ingot type shows soft while ribbon shows hard magnetic behavior.

Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate

NASA Astrophysics Data System (ADS)

Kim, H. D.; Roh, Y.; Lee, J. E.; Kang, H.-B.; Yang, C.-W.; Lee, N.-E.

2004-07-01

We have investigated the effects of high temperature annealing on the physical and electrical properties of multilayered high-k gate oxide [HfSixOy/HfO2/intermixed-layer(IL)/ZrO2/intermixed-layer(IL)/HfO2] in metal-oxide-semiconductor device. The multilayered high-k films were formed after oxidizing the Hf/Zr/Hf films deposited directly on the Si substrate. The subsequent N2 annealing at high temperature (>= 700 °C) not only results in the polycrystallization of the multilayered high-k films, but also causes the diffusion of Zr. The latter transforms the HfSixOy/HfO2/IL/ZrO2/IL/HfO2 film into the Zr-doped HfO2 film, and improves electrical properties in general. However, the thin SiOx interfacial layer starts to form if annealing temperature increases over 700 °C, deteriorating the equivalent oxide thickness. .

Effects of CO2 adsorption on proton migration on a hydrated ZrO2 surface: an ab initio molecular dynamics study.

PubMed

Sato, Ryuhei; Shibuta, Yasushi; Shimojo, Fuyuki; Yamaguchi, Shu

2017-08-02

Hydration reactions on a carbonate-terminated cubic ZrO 2 (110) surface were analyzed using ab initio molecular dynamics (AIMD) simulations. After hydration reactions, carbonates were still present on the surface at 500 K. However, these carbonates are very weak conjugate bases and only act as steric hindrance in proton hopping processes between acidic chemisorbed H 2 O molecules (Zr-OH 2 ) and monodentate hydroxyl groups (Zr-OH - ). Similar to a carbonate-free hydrated surface, Zr-OH 2 , Zr-OH - , and polydentate hydroxyl groups ([double bond splayed left]OH + ) were observed, while the ratio of acidic Zr-OH 2 was significantly larger than that on the carbonate-free hydrated surface. A thermodynamic discussion and bond property analysis reveal that CO 2 adsorption significantly decreases the basicity of surface oxide ions ([double bond splayed left]O), whereas the acidity of Zr-OH 2 is not affected. As a result, protons released from [double bond splayed left]OH + react with Zr-OH - to form Zr-OH 2 , leading to a deficiency of proton acceptor sites, which decreases the proton conductivity by the hopping mechanism.

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

PubMed Central

Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung; Kuo, Hsueh-Hui; Magyari-Köpe, Blanka; Moore, Robert G.; Shen, Zhi-Xun; Fisher, Ian R.; Nishi, Yoshio; Pop, Eric

2017-01-01

The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable “high-κ” native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 106; on current, ~30 μA/μm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-κ dielectrics, and scaling benefits from their atomically thin nature. PMID:28819644

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

NASA Astrophysics Data System (ADS)

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla; Kuball, Martin

2015-06-01

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

Controlling the Morphology of Side Chain Liquid Crystalline Block Copolymer Thin Films through Variations in Liquid Crystalline Content

PubMed Central

Verploegen, Eric; Zhang, Tejia; Jung, Yeon Sik; Ross, Caroline; Hammond, Paula T.

2009-01-01

In this paper we describe methods for manipulating the morphology of side-chain liquid crystalline block copolymers through variations in the liquid crystalline content. By systematically controlling the covalent attachment of side chain liquid crystals to a block copolymer (BCP) backbone, the morphology of both the liquid crystalline (LC) mesophase and the phase segregated BCP microstructures can be precisely manipulated. Increases in LC functionalization lead to stronger preferences for the anchoring of the LC mesophase relative to the substrate and the inter-material dividing surface (IMDS). By manipulating the strength of these interactions the arrangement and ordering of the ultrathin film block copolymer nanostructures can be controlled, yielding a range of morphologies that includes perpendicular and parallel cylinders, as well as both perpendicular and parallel lamellae. Additionally, we demonstrate the utilization of selective etching to create a nanoporous liquid crystalline polymer thin film. The unique control over the orientation and order of the self-assembled morphologies with respect to the substrate will allow for the custom design of thin films for specific nano-patterning applications without manipulation of the surface chemistry or the application of external fields. PMID:18763835

A DFT+U study of Pu immobilization in Gd2Zr2O7

NASA Astrophysics Data System (ADS)

Zhao, F. A.; Xiao, H. Y.; Jiang, M.; Liu, Z. J.; Zu, X. T.

2015-12-01

The solubility of Pu in Gd2Zr2O7 has been investigated by the density functional theory plus Hubbard U correction. It is found that the formation of PuGdZr2O7, Gd2PuZrO7 and Gd2Pu1.5Zr0.5O7 are exothermic, whereas Pu0.5Gd1.5Zr2O7, Pu1.5Gd0.5Zr2O7 and Gd2Pu0.5Zr1.5O7 are energetically less stable than their respective separated states. The calculations show that both the Gd and Zr lattice sites can be substituted by the Pu, which is consistent with the immobilization behavior of uranium in Gd2Zr2O7 observed experimentally. The site preference of Pu in Gd2Zr2O7 is found to be dependent on the chemical environment, i.e., Pu prefers to substitute for Gd-site under Gd-rich and O2-rich conditions and for Zr-site under Zr-rich and O2-rich conditions.

Enhanced polarization and dielectric properties of Pb(Zr1-xTix)O3 thin films

NASA Astrophysics Data System (ADS)

Ortega, N.; Kumar, Ashok; Katiyar, R. S.

2008-10-01

We report the fabrication of PbZr0.57Ti0.43O3 (PZT) thin films with preferential growth along (111) and random crystalline orientation on the platinized silicon substrates using pulsed laser deposition technique. X-ray diffraction patterns and surface morphology indicate increase in grain size and nucleation, which support better perovskite matrix with increase in annealing temperature. We observed large dielectric constant (˜4000) and enhanced remanent polarization 70 μC/cm2 at room temperature attributed to grain growth and intermetallic Pt-Pb transient phase. Frequency dependent polarization showed minor reduction in polarization above 10 kHz frequencies. Normalized fatigue characteristic of PZT thin films showed minimal 25% degradation in remanent polarization after 109 cycles, which may be useful for memory devices. ac conductivity spectra illustrated that anomaly near the phase transition temperature with activation energy (Ea˜0.60-0.75 eV) supports the intrinsic nature of ferroelectric phase transition.

Broadband strip-line ferromagnetic resonance spectroscopy of soft magnetic CoFeTaZr patterned thin films

NASA Astrophysics Data System (ADS)

Gupta, S.; Kumar, D.; Jin, T. L.; Nongjai, R.; Asokan, K.; Ghosh, A.; Aparnadevi, M.; Suri, P.; Piramanayagam, S. N.

2018-05-01

In this paper, magnetic and magnetization dynamic properties of compositionally patterned Co46Fe40Ta9Zr5 thin films are investigated. A combination of self-assembly and ion-implantation was employed to locally alter the composition of Co46Fe40Ta9Zr5 thin film in a periodic manner. 20 keV O+ and 60 keV N+ ions were implanted at different doses in order to modify the magnetization dynamic properties of the samples in a controlled fashion. Magnetic hysteresis loop measurements revealed significant changes in the coercivity for higher influences of 5 × 1016 ions per cm2. In particular, N+ implantation was observed to induce two phase formation with high and low coercivities. Broadband strip-line ferromagnetic resonance spectroscopy over wide range of frequency (8 - 20 GHz) was used to study the magnetization dynamics as a function of ion-beam dosage. With higher fluences, damping constant showed a continuous increase from 0.0103 to 0.0430. Such control of magnetic properties at nano-scale using this method is believed to be useful for spintronics and microwave device applications.

Oxidative desulfurization of benzothiophene and thiophene with WOx/ZrO2 catalysts: effect of calcination temperature of catalysts.

PubMed

Hasan, Zubair; Jeon, Jaewoo; Jhung, Sung Hwa

2012-02-29

Oxidative desulfurization (ODS) of model fuel containing benzothiophene (BT) or thiophene (Th) has been carried out with WO(x)/ZrO2 catalyst, which was calcined at various temperatures. Based on the conversion of BT in the model fuel, it can be shown that the optimum calcination temperature of WOx/ZrO2 catalyst is around 700 °C. The most active catalyst is composed of tetragonal zirconia (ZrO2) with well dispersed polyoxotungstate species and it is necessary to minimize the contents of the crystalline WO3 and monoclinic ZrO2 for a high BT conversion. The oxidation rate was interpreted with the first-order kinetics, and it demonstrated the importance of electron density since the kinetic constant for BT was higher than that for Th even though the BT is larger than Th in size. A WOx/ZrO2 catalyst, treated suitably, can be used as a reusable active catalyst in the ODS. Copyright © 2012 Elsevier B.V. All rights reserved.

Mesoporous ZrO2 fibers with enhanced surface area and the application as recyclable absorbent

NASA Astrophysics Data System (ADS)

Yu, Zhichao; Liu, Benxue; Zhou, Haifeng; Feng, Cong; Wang, Xinqiang; Yuan, Kangkang; Gan, Xinzhu; Zhu, Luyi; Zhang, Guanghui; Xu, Dong

2017-03-01

Highly crystalline mesoporous zirconia fibers with high surface area have been prepared by the use of electrospinning combined with precursors method. The obtained precursor fibers were treated in water steam and directly in air at different temperature respectively. Compared with the direct calcination in air, the water steam cannot only promote the crystallization of ZrO2 but also effectively remove off the organics and prevent the pore structure collapse. Moreover, through adding hydrochloric acid to modify the solution pH value, the obtained t-ZrO2 fibers treated in water steam at 300 °C have high surface area and large pore volume of 232.70 m2 g-1 and 0.36 cm3 g-1. The formation mechanism of the mesostucture was studied and the schematic was represented. Compared with the previous reports of mesoporous ZrO2 fibers, the as-synthesized materials exhibited the high crystallinity, large surface area and the long-range order mesostructure.The adsorption of Congo red indicates that the samples have a high adsorption capacity of 103.46 mg g-1 and long-periodic repeated availability.

The solubility and site preference of Fe{sup 3+} in Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rettenwander, D., E-mail: daniel.rettenwander@sbg.ac.at; Geiger, C.A.; Tribus, M.

2015-10-15

A series of Fe{sup 3+}-bearing Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZO) garnets was synthesized using solid-state synthesis methods. The synthetic products were characterized compositionally using electron microprobe analysis and inductively coupled plasma optical emission spectroscopy (ICP-OES) and structurally using X-ray powder diffraction and {sup 57}Fe Mössbauer spectroscopy. A maximum of about 0.25 Fe{sup 3+} pfu could be incorporated in Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnet solid solutions. At Fe{sup 3+} concentrations lower than about 0.16 pfu, both tetragonal and cubic garnets were obtained in the synthesis experiments. X-ray powder diffraction analysis showed only a garnet phase for syntheses withmore » starting materials having intended Fe{sup 3+} contents lower than 0.52 Fe{sup 3+} pfu. Back-scattered electron images made with an electron microprobe also showed no phase other than garnet for these compositions. The lattice parameter, a{sub 0}, for all solid-solution garnets is similar with a value of a{sub 0}≈12.98 Å regardless of the amount of Fe{sup 3+}. {sup 57}Fe Mössbauer spectroscopic measurements indicate the presence of poorly- or nano-crystalline FeLaO{sub 3} in syntheses with Fe{sup 3+} contents greater than 0.16 Fe{sup 3+} pfu. The composition of different phase pure Li{sub 7−3x}Fe{sub x}La{sub 3}Zr{sub 2}O{sub 12} garnets, as determined by electron microprobe (Fe, La, Zr) and ICP-OES (Li) measurements, give Li{sub 6.89}Fe{sub 0.03}La{sub 3.05}Zr{sub 2.01}O{sub 12}, Li{sub 6.66}Fe{sub 0.06}La{sub 3.06}Zr{sub 2.01}O{sub 12}, Li{sub 6.54}Fe{sub 0.12}La{sub 3.01}Zr{sub 1.98}O{sub 12}, and Li{sub 6.19}Fe{sub 0.19}La{sub 3.02}Zr{sub 2.04}O{sub 12}. The {sup 57}Fe Mössbauer spectrum of cubic Li{sub 6.54}Fe{sub 0.12}La{sub 3.01}Zr{sub 1.98}O{sub 12} garnet indicates that most Fe{sup 3+} occurs at the special crystallographic 24d position, which is the standard tetrahedrally coordinated site in garnet. Fe{sup 3+} in

Uniform nano-sized valsartan for dissolution and bioavailability enhancement: influence of particle size and crystalline state.

PubMed

Ma, Qiuping; Sun, Hongrui; Che, Erxi; Zheng, Xin; Jiang, Tongying; Sun, Changshan; Wang, Siling

2013-01-30

The central purpose of this study was to evaluate the impact of drug particle size and crystalline state on valsartan (VAL) formulations in order to improve its dissolution and bioavailability. VAL microsuspension (mean size 22 μm) and nanosuspension (30-80nm) were prepared by high speed dispersing and anti-solvent precipitation method and converted into powders through spray drying. Differential scanning calorimetry studies indicated amorphization of VAL in the spray-dried valsartan nanosuspension (SD-VAL-Nano) but recrystallization occurred after 6 months storage at room temperature. The spray-dried valsartan microsuspension (SD-VAL-Micro) conserved the crystalline form. The VAL dissolution rate and extent were markedly enhanced with both SD-VAL-Micro and SD-VAL-Nano as compared to crude VAL crystals over the pH range of 1.2-6.8. Pharmacokinetic studies in rats demonstrated a 2.5-fold increase in oral bioavailability in the case of SD-VAL-Nano compared with the commercial product while the SD-VAL-Micro provided a much less desirable pharmacokinetic profile. In conclusion, reducing particle size to the nano-scale appears to be a worthwhile and promising approach to obtain VAL products with optimum bioavailability. In addition, the impact of crystalline state on the bioavailability of nano-sized VAL might be not as big as that of particle size. Copyright © 2012 Elsevier B.V. All rights reserved.

Electrochemical Characteristics of Cell Cultured Ti-Nb-Zr Alloys After Nano-Crystallized Si-HA Coating.

PubMed

Jeong, Yong-Hoon; Choe, Han-Cheol

2015-01-01

The aim of this study was to investigate the electrochemical characteristics of nano crystallized Si-HA coating on Ti-Nb-Zr alloy after human osteoblast like (HOB) cell attachment. The Ti-Nb-Zr alloy was manufactured with 35 wt.% of Nb and 10 wt.% of Zr by arc melting furnace to appropriate physical properties as biomaterials. The HA and Si-substituted coatings were prepared by electron-beam physical vapor deposition method with 0.5, 0.8 and 1.2 wt.% of Si contents, and nano aging treatment was performed 500 degrees C for 1 h. The characteristics of coating surface were analyzed by field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction, respectively. To evaluate of cell attachment on cell cultured surface, the potentiodynamic test was performed on the surface using HOB cells. The results showed that the Si-HA coating surface showed higher tendency of cell attachment than that of single HA coating, corrosion resistance value was increased by dense of cell attachment.

Ca2+-exchange in layered zirconium orthophosphate, α-ZrP: Chemical study and potential application for zinc corrosion inhibition

NASA Astrophysics Data System (ADS)

Bouali, Imane; Rocca, Emmanuel; Veys-Renaux, Delphine; Rhouta, Benaissa; Khalil, Aziza; Aït Aghzzaf, Ahmed

2017-11-01

The control of the corrosion phenomenon occurring at the metal interface requires the development of new non-toxic anticorrosion additives. For this purpose, zirconium orthophosphate compounds (Zr(HPO4)2,H2O noted α-ZrP) were synthesized by both hydrothermal and refluxing methods The Ca2+-cationic exchange in the layered structure is kinetically favoured by low crystallinity of α-ZrP synthesized by refluxing process, and leads to the formation of CaZr(PO4)2,4H2O, noted Ca2+-ZrP. The H+/Ca2+ exchange mechanism is mainly triggered by acid-base considerations, and especially the pKa of α-ZrP/Ca2+-ZrP acid-base couple (evaluated to 2.5). Both compounds are acidic compounds by internal exchangeable H+ for α-ZrP and surface protons for Ca2+-ZrP, and can be used as potential inhibitors of zinc corrosion. Electrochemical measurements show that Ca2+-ZrP compounds dispersed in the NaCl electrolyte buffer the pH value over a long time and therefore allow controlling the corrosion rate of zinc.

Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

NASA Astrophysics Data System (ADS)

Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

2016-11-01

Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

PubMed

Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

2015-03-18

The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Giant negative electrocaloric effect in PbZrO3/0.88BaTiO3-0.12Bi(Mg1/2,Ti1/2)O3 multilayered composite ferroelectric thin film for solid-state refrigeration

NASA Astrophysics Data System (ADS)

Huang, D.; Wang, J. B.; Zhong, X. L.; Li, B.; Zhang, Y.; Jin, C.; Zheng, D. F.; Meng, X. J.

2017-11-01

A giant negative electrocaloric (EC) effect in a PbZrO3/(0.88BaTiO3-0.12 Bi(Mg1/2,Ti1/2)O3) (PZ/(BT-BMT)) multilayered composite ferroelectric (MCFE) thin film which is grown on Pt(111)/Ti/SiO2/Si(100) substrates by the sol-gel method is investigated in this work. The negative EC effect in the PZ/(BMT-BT) MCFE thin film is greatly higher than that in the PZ AFE thin film with an adiabatic temperature change (ATC) ΔT = 1.5 K. The ATC ΔT of the PZ/(BMT-BT) MCFE thin film is -32 K under the applied electric field change ΔE = 1151 kV/cm. The result is conducive to enhance the EC refrigeration efficiency greatly.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

NASA Astrophysics Data System (ADS)

Anasthasiya, A. Nancy Anna; Gowtham, K.; Shruthi, R.; Pandeeswari, R.; Jeyaprakash, B. G.

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10mL to 50mL in steps of 10mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

Optical Properties of Ar Ions Irradiated Nanocrystalline ZrC and ZrN Thin Films

NASA Technical Reports Server (NTRS)

Martin, C.; Miller, K. H.; Makino, H.; Craciun, D.; Simeone, D.; Craciun, V.

2017-01-01

Thin nanocrystalline ZrC and ZrN films (less than 400 nanometers), grown on (100) Si substrates at a substrate temperature of 500 degrees Centigrade by the pulsed laser deposition (PLD) technique, were irradiated by 800 kiloelectronvolts Ar ion irradiation with fluences from 1 times 10(sup 14) atoms per square centimeter up to 2 times 10(sup 15) atoms per square centimeter. Optical reflectance data, acquired from as-deposited and irradiated films, in the range of 500-50000 per centimeter (0.06–6 electronvolts), was used to assess the effect of irradiation on the optical and electronic properties. Both in ZrC and ZrN films we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate, i.e. possible increase in mobility, at higher irradiation flux. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major structural changes.

Mechanical properties and rapid low-temperature consolidation of nanocrystalline Cu-ZrO2 composites by pulsed current activated heating

NASA Astrophysics Data System (ADS)

Kang, Bo-Ram; Yoon, Jin-kook; Hong, Kyung-Tae; Shon, In-Jin

2015-07-01

Metal-ceramic compositr can be obtained with an optimum combination of low density, high oxidation resistance, and high hardness of the ceramic and toughness of the metal. Therefore, metal matrix composites are recognized as candidates for aerospace, automotive, biomaterials, and defense applications. Despite its many attractive properties, the low fracture toughness of ZrO2 limits its wide application. One of the most obvious tactics to improve the mechanical properties has been to fabricate a nanostructured material and composite material. Nano-powders of Cu and ZrO2 were synthesized from 2CuO and Zr powders by high-energy ball milling. Nanocrystalline 2Cu-ZrO2 composite was consolidated within 5 minutes from mechanically synthesized powders of ZrO2 and 2Cu at low temperature, by a pulsed current activated sintering method. The relative density of the composite was 98.5%. The fracture toughness of 2Cu-ZrO2 composite in this study is higher than that of monolithic ZrO2, without great decrease of hardness.

Preparation of Cu2ZnSnS4 nano-crystalline powder by mechano-chemical method

NASA Astrophysics Data System (ADS)

Alirezazadeh, Farzaneh; Sheibani, Saeed; Rashchi, Fereshteh

2018-01-01

Copper zinc tin sulfide (Cu2ZnSnS4, CZTS) is one of the most promising ceramic materials as an absorber layer in solar cells due to its suitable band gap, high absorption coefficient and non-toxic and environmental friendly constituent elements. In this work, nano-crystalline CZTS powder was synthesized by mechanical milling. Elemental powders of Cu, Zn, Sn and were mixed in atomic ratio of 2:1:1:4 according to the stoichiometry of Cu2ZnSnS4 and then milled in a planetary high energy ball mill under argon atmosphere. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and diffusion reflectance spectroscopy (DRS). XRD results confirm the formation of single-phase CZTS with kesterite structure after 20 h of milling. Also, the mean crystallite size was about 35 nm. SEM results show that after 20 h of milling, the product has a relatively uniform particle size distribution. Optical properties of the product indicate that the band gap of prepared CZTS is 1.6 eV which is near to the optimum value for photovoltaic solar cells showing as a light absorber material in solar energy applications.

Preparation of Zr(Mo,W)2O8 with a larger negative thermal expansion by controlling the thermal decomposition of Zr(Mo,W)2(OH,Cl)2∙2H2O.

PubMed

Petrushina, Mariya Yu; Dedova, Elena S; Filatov, Eugeny Yu; Plyusnin, Pavel E; Korenev, Sergei V; Kulkov, Sergei N; Derevyannikova, Elizaveta A; Sharafutdinov, Marat R; Gubanov, Alexander I

2018-03-28

Solid solutions of Zr(Mo,W) 2 O 7 (OH,Cl) 2 ∙2H 2 O with a preset ratio of components were prepared by a hydrothermal method. The chemical composition of the solutions was determined by energy dispersive X-ray spectroscopy (EDX). For all the samples of ZrMo x W 2-x O 7 (OH,Cl) 2 ∙2H 2 O (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8, and 2.0), TGA and in situ powder X-ray diffraction (PXRD) studies (300-1100 K) were conducted. For each case, the boundaries of the transformations were determined: Zr(Mo,W) 2 O 7 (OH,Cl) 2 ∙2H 2 O → orthorhombic-ZrMo x W 2-x O 8 (425-525 K), orthorhombic-ZrMo x W 2-x O 8  → cubic-ZrMo x W 2-x O 8 (700-850 K), cubic-ZrMo x W 2-x O 8  → trigonal-ZrMo x W 2-x O 8 (800-1050 K for x > 1) and cubic-ZrMo x W 2-x O 8  → oxides (1000-1075 K for x ≤ 1). The cell parameters of the disordered cubic-ZrMo x W 2-x O 8 (space group Pa-3) were measured within 300-900 K, and the thermal expansion coefficients were calculated: -3.5∙10 -6  - -4.5∙10 -6  K -1 . For the ordered ZrMo 1.8 W 0.2 O 8 (space group P2 1 3), a negative thermal expansion (NTE) coefficient -9.6∙10 -6  K -1 (300-400 K) was calculated. Orthorhombic-ZrW2O 8 is formed upon the decomposition of ZrW 2 O 7 (OH,Cl) 2 ∙2H 2 O within 500-800 K.

Influence of in situ and ex situ ZrO2 addition on the properties of MgB2

NASA Astrophysics Data System (ADS)

Chen, S. K.; Glowacki, B. A.; MacManus-Driscoll, J. L.; Vickers, M. E.; Majoros, M.

2004-02-01

The effect of ZrO2 addition on the properties of MgB2 has been studied using in situ and ex situ processes. The in situ process was performed by introducing ZrO2 from the milling tools into MgB2 throughout the planetary ball milling, whereas the ex situ process was accomplished by mixing ZrO2 from the milling tools with MgB2 by hand grinding in a mortar. A detectable amount of ZrO2 was present in MgB2 after 4 h of milling during the in situ process and its content increased with milling time as expected. The 400 h milled powder was partially amorphized and showed the formation of a minority ZrB2 phase. For milling up to 100 h, diamagnetism of MgB2 was significantly reduced while Tc remained unchanged. Superconductivity was totally destroyed after 148 h of milling. The loss of superconductivity is attributed to the effect of disordering induced by mechanical milling. As a result of in situ ZrO2 addition, the initial Tc and crystal structure of MgB2 could not be restored upon annealing. With increasing milling time, the expansion of lattice parameters in both the a-axis and c-axis may be due to possible substitution of Mg or B by Zr. The result from the magnetic measurement shows that Jc of MgB2 is deteriorated by in situ ZrO2 addition. On the other hand, ex situ ZrO2 addition with annealing did not degrade the Tc of MgB2.

Environmental risk assessment of engineered nano-SiO2 , nano iron oxides, nano-CeO2 , nano-Al2 O3 , and quantum dots.

PubMed

Wang, Yan; Nowack, Bernd

2018-05-01

Many research studies have endeavored to investigate the ecotoxicological hazards of engineered nanomaterials (ENMs). However, little is known regarding the actual environmental risks of ENMs, combining both hazard and exposure data. The aim of the present study was to quantify the environmental risks for nano-Al 2 O 3 , nano-SiO 2 , nano iron oxides, nano-CeO 2 , and quantum dots by comparing the predicted environmental concentrations (PECs) with the predicted-no-effect concentrations (PNECs). The PEC values of these 5 ENMs in freshwaters in 2020 for northern Europe and southeastern Europe were taken from a published dynamic probabilistic material flow analysis model. The PNEC values were calculated using probabilistic species sensitivity distribution (SSD). The order of the PNEC values was quantum dots < nano-CeO 2  < nano iron oxides < nano-Al 2 O 3  < nano-SiO 2 . The risks posed by these 5 ENMs were demonstrated to be in the reverse order: nano-Al 2 O 3  > nano-SiO 2  > nano iron oxides > nano-CeO 2  > quantum dots. However, all risk characterization values are 4 to 8 orders of magnitude lower than 1, and no risk was therefore predicted for any of the investigated ENMs at the estimated release level in 2020. Compared to static models, the dynamic material flow model allowed us to use PEC values based on a more complex parameterization, considering a dynamic input over time and time-dependent release of ENMs. The probabilistic SSD approach makes it possible to include all available data to estimate hazards of ENMs by considering the whole range of variability between studies and material types. The risk-assessment approach is therefore able to handle the uncertainty and variability associated with the collected data. The results of the present study provide a scientific foundation for risk-based regulatory decisions of the investigated ENMs. Environ Toxicol Chem 2018;37:1387-1395. © 2018 SETAC. © 2018 SETAC.

Air Plasma-Sprayed La2Zr2O7-SrZrO3 Composite Thermal Barrier Coating Subjected to CaO-MgO-Al2O3-SiO2 (CMAS)

NASA Astrophysics Data System (ADS)

Cai, Lili; Ma, Wen; Ma, Bole; Guo, Feng; Chen, Weidong; Dong, Hongying; Shuang, Yingchai

2017-08-01

La2Zr2O7-SrZrO3 composite thermal barrier coatings (TBCs) were prepared by air plasma spray (APS). The La2Zr2O7-SrZrO3 composite TBCs covered with calcium-magnesium-aluminum-silicate (CMAS) powder, as well as the powder mixture of CMAS and spray-dried La2Zr2O7-SrZrO3 composite powder, were heat-treated at 1250 °C in air for 1, 4, 8, and 12 h. The phase constituents and microstructures of the reaction products were characterized by x-ray diffraction, scanning electron microscopy, and energy-dispersive spectroscopy. Experimental results showed that the La2Zr2O7-SrZrO3 composite TBCs had higher CMAS resistance than 8YSZ coating. A dense new layer developed between CMAS and La2Zr2O7-SrZrO3 composite TBCs during interaction, and this new layer consisted mostly of apatite (Ca2La8(SiO4)6O2) and c-ZrO2. The newly developed layer effectively protected the La2Zr2O7-SrZrO3 composite TBCs from further CMAS attack.

Theoretical study of the promotional effect of ZrO2 on In2O3 catalyzed methanol synthesis from CO2 hydrogenation

NASA Astrophysics Data System (ADS)

Zhang, Minhua; Dou, Maobin; Yu, Yingzhe

2018-03-01

Methanol synthesis from CO2 hydrogenation on the ZrO2 doped In2O3(110) surface (Zr-In2O3(110)) with oxygen vacancy has been studied using the density functional theory calculations. The calculated results show that the doped ZrO2 species prohibits the excessive formation of oxygen vacancies and dissociation of H2 on In2O3 surface slightly, but enhances the adsorption of CO2 on both perfect and defective Zr-In2O3(110) surface. Methanol is formed via the HCOO route. The hydrogenation of CO2 to HCOO is both energetically and kinetically facile. The HCOO hydrogenates to polydentate H2CO (p-H2CO) species with an activation barrier of 0.75 eV. H3CO is produced from the hydrogenation of monodentate H2CO (mono-H2CO), transformation from p-H2CO with 0.82 eV reaction energy, with no barrier whether there is hydroxyl group between the mono-H2CO and the neighboring hydride or not. Methanol is the product of H3CO protonation with 0.75 eV barrier. The dissociation and protonation of CO2 are both energetically and kinetically prohibited on Zr-In2O3(110) surface. The doped ZrO2 species can further enhance the adsorption of all the intermediates involved in CO2 hydrogenation to methanol, activate the adsorbed CO2 and H2CO, and stabilize the HCOO, H2CO and H3CO, especially prohibit the dissociation of H2CO or the reaction of H2CO with neighboring hydride to form HCOO and gas phase H2. All these effects make the ZrO2 supported In2O3 catalyst exhibit higher activity and selectivity on methanol synthesis from CO2 hydrogenation.

Temperature-dependent local structural properties of redox Pt nanoparticles on TiO 2 and ZrO 2 supports

DOE PAGES

Jeong, Eun -Suk; Park, Chang -In; Jin, Zhenlan; ...

2015-01-21

This paper examined the local structural properties of Pt nanoparticles on SiO 2, TiO 2–SiO 2, and ZrO 2–SiO 2 supports to better understand the impact of oxide-support type on the performance of Pt-based catalysts. In situ X-ray absorption fine structure (XAFS) measurements were taken for the Pt L3-edge in a temperature range from 300 to 700 K in He, H 2, and O 2 gas environments. The XAFS measurements demonstrated that Pt atoms were highly dispersed on TiO 2–SiO 2 and ZrO 2–SiO 2 forming pancake-shaped nanoparticles, whereas Pt atoms formed larger particles of hemispherical shapes on SiO 2more » supports. Contrary to the SiO 2 case, the coordination numbers for Pt, Ti, and Zr around Pt atoms on the TiO 2–SiO 2 and ZrO 2–SiO 2 supports were nearly constant from 300 to 700 K under the different gas environments. These results are consistent with the improvements in thermal stability of Pt nanoparticles achieved by incorporating TiO 2 or ZrO 2 on the surface of SiO 2 supports. XAFS analysis further indicated that the enhanced dispersion and stability of Pt were a consequence of the strong metal support interaction via Pt–Ti and Pt–Zr bonds.« less

Characterization of hot-pressed short ZrO{sub 2} fiber toughened ZrB{sub 2}-based ultra-high temperature ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Jia, E-mail: 2013113205@xmut.edu.cn; Huang, Yu; Zhang, Houan

2014-09-15

Two different ZrB{sub 2}-based ultra-high temperature ceramics were produced by hot pressing: ZrB{sub 2} + 20 vol.% SiC particle + 15 vol.% ZrO{sub 2} fiber and ZrB{sub 2} + 20 vol.% SiC whisker + 15 vol.% ZrO{sub 2} fiber. The microstructures were analyzed by using transmission electron microscopy and high-resolution transmission electron microscopy. It was shown that a clean interface without any impurities was identified in ZrB{sub 2}-based hybrid ceramics with SiC whiskers and ZrO{sub 2} fibers, which would significantly improve the toughening mechanism. The results of high-resolution transmission electron microscopy showed that stacking faults in SiC whiskers resulted frommore » an insertion of a (111) layer, which would be one of the main reasons for material anisotropy. However, the interface between the SiC particle and ZrO{sub 2} fiber was found to be ambiguous in ZrB{sub 2}-based hybrid ceramics with SiC particles and ZrO{sub 2} fibers due to the slight reaction. The orientation relationship between t-ZrO{sub 2} and m-ZrO{sub 2} phases obeyed the classical correspondence: (100){sub m}//(100){sub t} and [001]{sub m}//〈001〉{sub t}, which further verified the feasibility of phase transformation toughening mechanism. - Highlights: • ZrB{sub 2}-based ceramics toughened by short ZrO{sub 2} fiber are characterized by TEM and HRTEM. • The orientation relationship of t- and m-ZrO{sub 2} are (100){sub m}//(100){sub t}, [001]{sub m}//〈001〉{sub t} • The clean interface without any impurities leads to improve the toughening mechanism.« less

Gadolinium-doped hollow CeO2-ZrO2 nanoplatform as multifunctional MRI/CT dual-modal imaging agent and drug delivery vehicle.

PubMed

Wei, Zuwu; Wu, Ming; Li, Zuanfang; Lin, Zhan; Zeng, Jinhua; Sun, Haiyan; Liu, Xiaolong; Liu, Jingfeng; Li, Buhong; Zeng, Yongyi

2018-11-01

Developing multifunctional nanoparticle-based theranostic platform for cancer diagnosis and treatment is highly desirable, however, most of the present theranostic platforms are fabricated via complicated structure/composition design and time-consuming synthesis procedures. Herein, the multifunctional Gd/CeO 2 -ZrO 2 /DOX-PEG nanoplatform with single nano-structure was fabricated through a facile route, which possessed MR/CT dual-model imaging and chemotherapy ability. The nanoplatform not only exhibited well-defined shapes, tunable compositions and narrow size distributions, but also presented a well anti-cancer effect and MR/CT imaging ability. Therefore, the Gd/CeO 2 -ZrO 2 /DOX-PEG nanoplatform could be applied for chemotherapy as well as dual-model MR/CT imaging.

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

Anisotropy of the Irreversibility Field for Zr-doped (Y,Gd)Ba 2<\\sub>Cu3<\\sub>O<7-x<\\sub> Thin Films up to 45 T

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarantini, C.; Jaroszynski, J.; Kametani, F.

2011-01-01

The anisotropic irreversibility fieldBIrr of twoYBa2Cu3O7 x thin films dopedwith additional rare earth (RE)= (Gd, Y) and Zr and containing strong correlated pins (splayed BaZrO3 nanorods and RE2O3 anoprecipitates) has been measured over a very broad range up to 45 T at temperatures 56 K < T < Tc. We found that the experimental angular dependence of BIrr ( ) does not follow the mass anisotropy scaling BIrr ( ) = BIrr (0)(cos2 + 2 sin2 ) 1/2, where = (mc/mab)1/2 = 5 6 for the RE-doped Ba2Cu3O7 x (REBCO) crystals, mab and mc are the effective masses along themore » ab plane and the c-axis, respectively, and is the angle between B and the c-axis. For B parallel to the ab planes and to the c-axis correlated pinning strongly enhances BIrr , while at intermediate angles, BIrr ( ) follows the scaling behavior BIrr ( ) (cos2 + 2 RP sin2 ) 1/2 with the effective anisotropy factor RP 3 significantly smaller than the ass anisotropy would suggest. In spite of the strong effects of c-axis BaZrO3 nanorods, we found even greater enhancements of BIrr for fields along the ab planes than for fields parallel to the c-axis, as well as different temperature dependences of the correlated pinning contributions to BIrr for B//ab and B//c. Our results show that the dense and strong pins, which can now be incorporated into REBCO thin films in a controlled way, exert major and diverse effects on the measured vortex pinning anisotropy and the irreversibility field over wide ranges of B and T . In particular, we show that the relative contribution of correlated pinning to BIrr for B//c increases as the temperature increases due to the suppression of thermal fluctuations of vortices by splayed distribution of BaZrO3 nanorods.« less

High pressure phase transitions and compressibilities of Er2Zr2O7 and Ho2Zr2O7

NASA Astrophysics Data System (ADS)

Zhang, F. X.; Lang, M.; Becker, U.; Ewing, R. C.; Lian, J.

2008-01-01

Phase stability and compressibility of rare earth zirconates with the defect-fluorite structure were investigated by in situ synchrotron x-ray diffraction. A sluggish defect-fluorite to a cotunnitelike phase transformation occurred at pressures of ˜22 and ˜30GPa for Er2Zr2O7 and Ho2Zr2O7, respectively. Enhanced compressibility was found for the high pressure phase as a result of increasing cation coordination number and cation-anion bond length.

Synthesis of antimicrobial Nisin-phosphorylated soybean protein isolate/poly(L-lactic acid)/ZrO2 membranes.

PubMed

Jiang, Suwei; Wang, Hualin; Chu, Chenjiang; Ma, Xingkong; Sun, Min; Jiang, Shaotong

2015-01-01

Electrospinning technique was used to fabricate the model drug Nisin loaded phosphorylated soybean protein isolate/poly(l-lactic acid)/zirconium dioxide (Nisin-PSPI/PLLA/ZrO2) nanofibrous membranes. The average diameter of drug carrier PSPI/PLLA/ZrO2 nanofibers increased with the increase of content PSPI and some spindle-shape beads appeared when PSPI content reached 25 wt%. The loading dosage of Nisin caused no significant changes in the size and morphology of nanofibers when Nisin content was below 9 wt%. There existed hydrogen and Zr-O-C bonds among PSPI, PLLA and ZrO2 units, and the crystalline of PLLA matrix decreased owning to the introducing of PSPI and ZrO2 units. Moreover, the water absorption capability and degradation rate of PSPI/PLLA/ZrO2 nanofibrous membranes increased with increasing PSPI content. The antimicrobial activity and release experimental results showed that Nisin-PSPI/PLLA/ZrO2 nanofibrous membranes displayed well controlled release and better antimicrobial activity against Staphylococcus aureus (S. aureus), and the Nisin release from the medicated nanofibers could be described by Fickian diffusion model. The Nisin-PSPI/PLLA/ZrO2 nanofibrous membranes may have potential as a new nanofibrous membrane in drug delivery, food active packaging and wound dressing. Copyright © 2014 Elsevier B.V. All rights reserved.

Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material.

PubMed

Shih, Cheng Wei; Chin, Albert

2017-04-25

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm 2 /Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 10 6 , and a low drain-voltage (V D ) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

Glass-ceramic nuclear waste forms obtained by crystallization of SiO 2-Al 2O 3-CaO-ZrO 2-TiO 2 glasses containing lanthanides (Ce, Nd, Eu, Gd, Yb) and actinides (Th): Study of the crystallization from the surface

NASA Astrophysics Data System (ADS)

Loiseau, P.; Caurant, D.

2010-07-01

Glass-ceramic materials containing zirconolite (nominally CaZrTi 2O 7) crystals in their bulk can be envisaged as potential waste forms for minor actinides (Np, Am, Cm) and Pu immobilization. In this study such matrices are synthesized by crystallization of SiO 2-Al 2O 3-CaO-ZrO 2-TiO 2 glasses containing lanthanides (Ce, Nd, Eu, Gd, Yb) and actinides (Th) as surrogates. A thin partially crystallized layer containing titanite and anorthite (nominally CaTiSiO 5 and CaAl 2Si 2O 8, respectively) growing from glass surface is also observed. The effect of the nature and concentration of surrogates on the structure, the microstructure and the composition of the crystals formed in the surface layer is presented in this paper. Titanite is the only crystalline phase able to significantly incorporate trivalent lanthanides whereas ThO 2 precipitates in the layer. The crystal growth thermal treatment duration (2-300 h) at high temperature (1050-1200 °C) is shown to strongly affect glass-ceramics microstructure. For the system studied in this paper, it appears that zirconolite is not thermodynamically stable in comparison with titanite growing form glass surface. Nevertheless, for kinetic reasons, such transformation (i.e. zirconolite disappearance to the benefit of titanite) is not expected to occur during interim storage and disposal of the glass-ceramic waste forms because their temperature will never exceed a few hundred degrees.

Facile Synthesis and Characterization of ZrO₂ Nanoparticles via Modified Co-Precipitation Method.

PubMed

Ramachandran, M; Subadevi, R; Liu, Wei-Ren; Sivakumar, M

2018-01-01

The crystalline Zirconium oxide (ZrO2) nano particles were synthesized using optimized content of Zirconium nitrate (Zr(NO3)2·3H2O) with varying KOH concentration (0.5, 1 and 1.5 M) by co-precipitation method. The thermal history of the precursor was carefully analyzed through Thermogravimetric (TG/DTA) measurement. The as prepared samples were characterized to ensure structural, functional, morphological, compositional, chemical composition and band gap by X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), Laser Raman, scanning electron microscopy (SEM), High resolution Transverse Electron Microscopy (HR-TEM), X-ray photo electron spectroscopy (XPS), EDX, Photo luminescence spectroscopy (PL). The monoclinic structure with space group P21/c has been confirmed from XRD (JCPDS 89-9066). The Zr-O stretching vibration and Zr-O2-Zr bending vibrations were confirmed through FTIR analysis. The well dispersed particles with spherical morphology were confirmed through SEM and TEM analysis. The oxidation states of Zr, O and C were confirmed through XPS analysis. The oxygen vacancies and band gap of the particles were investigated through PL analysis.

Indium-tin-oxide nanowhiskers crystalline silicon photovoltaics combining micro- and nano-scale surface textures

NASA Astrophysics Data System (ADS)

Chang, C. H.; Hsu, M. H.; Chang, W. L.; Sun, W. C.; Yu, Peichen

2011-02-01

In this work, we present a solution that employs combined micro- and nano-scale surface textures to increase light harvesting in the near infrared for crystalline silicon photovoltaics, and discuss the associated antireflection and scattering mechanisms. The combined surface textures are achieved by uniformly depositing a layer of indium-tin-oxide nanowhiskers on passivated, micro-grooved silicon solar cells using electron-beam evaporation. The nanowhiskers facilitate optical transmission in the near-infrared, which is optically equivalent to a stack of two dielectric thin-films with step- and graded- refractive index profiles. The ITO nanowhiskers provide broadband anti-reflective properties (R<5%) in the wavelength range of 350-1100nm. In comparison with conventional Si solar cell, the combined surface texture solar cell shows higher external quantum efficiency (EQE) in the range of 700-1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). Furthermore, the nano-whiskers also provide strong forward scattering for ultraviolet and visible light, favorable in thin-wafer silicon photovoltaics to increase the optical absorption path.

Synthesis of monodisperse spherical nanometer ZrO{sub 2} (Y{sub 2}O{sub 3}) powders via the coupling route of w/o emulsion with urea homogenous precipitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Ying; Dong, Shijie, E-mail: dongsjsj@163.com; Wang, Huihu

2012-03-15

Graphical abstract: In this paper, the weight loss and reaction evolution of ZrO{sub 2} precursor powders are determined by TG-DTA, and 600 Degree-Sign C is the most reasonable calcination temperature of precursor according to the TG-DTA. At the same time, we study the effect of reaction conditions upon the particle sizes, such as concentration of zirconium nitrate solution, reaction temperature and urea content. TEM micrographs of zirconia powders indicated that ZrO{sub 2} nano-powders prepared via the coupling route of w/o emulsion with homogenous precipitation possess spherical shape and excellent dispersing. Highlights: Black-Right-Pointing-Pointer The monodisperse spherical nanometer ZrO{sub 2} (Y{sub 2}O{submore » 3}) powders have been prepared via the coupling route of w/o emulsion with urea homogenous precipitation. Black-Right-Pointing-Pointer The principle of the coupling route of emulsion with homogenous precipitation has been studied. Black-Right-Pointing-Pointer The concentration of zirconium nitrate, reaction temperature of water bath and the quantity of urea effect regularly on the average particle size of products. -- Abstract: Using xylol as the oil phase, span-80 as the surfactant, and an aqueous solution containing zirconium (3 mol% Y{sub 2}O{sub 3}) and urea as the water phase, tetragonal phase ZrO{sub 2} nano-powders have been prepared via the coupling route of w/o emulsion with urea homogenous precipitation. The effects of the zirconium concentration, the reaction temperature and the urea content on the average size of the products have been examined. The as-prepared ZrO{sub 2} powders and the precursor powders were characterized by TGA-DTA, XRD, TEM and BET. Experimental results indicate that ZrO{sub 2} powders prepared via the coupling route of w/o emulsion with urea homogenous precipitation possess some excellent characteristics, such as well-rounded spherical shape and excellent dispersing.« less

ZrO2-Nanoparticle-Modified Graphite Felt: Bifunctional Effects on Vanadium Flow Batteries.

PubMed

Zhou, Haipeng; Shen, Yi; Xi, Jingyu; Qiu, Xinping; Chen, Liquan

2016-06-22

To improve the electrochemical performance of graphite felt (GF) electrodes in vanadium flow batteries (VFBs), we synthesize a series of ZrO2-modified GF (ZrO2/GF) electrodes with varying ZrO2 contents via a facile immersion-precipitation approach. It is found that the uniform immobilization of ZrO2 nanoparticles on the GF not only significantly promotes the accessibility of vanadium electrolyte, but also provides more active sites for the redox reactions, thereby resulting in better electrochemical activity and reversibility toward the VO(2+)/VO2(+) and V(2+)/V(3+) redox reactions as compared with those of GF. In particular, The ZrO2/GF composite with 0.3 wt % ZrO2 displays the best electrochemical performance with voltage and energy efficiencies of 71.9% and 67.4%, respectively, which are much higher than those of 57.3% and 53.8% as obtained from the GF electrode at 200 mA cm(-2). The cycle life tests demonstrate that the ZrO2/GF electrodes exhibit outstanding stability. The ZrO2/GF-based VFB battery shows negligible activity decay after 200 cycles.

Advanced fabrication of single-crystalline silver nanopillar on SiO{sub 2} substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Tomohiro, E-mail: tomohiro-mori@wakayama-kg.jp, E-mail: kenzo@eng.kagawa-u.ac.jp; Industrial Technology Center of Wakayama Prefecture, Ogura 60, Wakayama 649-6261; Tanaka, Yasuhiro

2016-01-25

Nanoscale crystallographic textures have received very little attention in research on surface plasmons using metallic nanostructures. A single-crystalline metallic nanostructure with a controlled crystallographic texture is expected to reduce optical losses. We elucidated the grain growth mechanism in silver thin films deposited on a highly transparent SiO{sub 2} substrate by electron backscatter diffraction methods with nanoscale resolution. At higher substrate temperatures, the grain growth was facilitated but the preferred orientation was not achieved. Moreover, we fabricated a single-crystalline silver nanopillar in a (111)-oriented large growing grain, which was controlled by varying the substrate temperature during film deposition by focused ion-beammore » milling. Furthermore, the light intensity of the scattering spectrum was measured for a single-crystalline silver nanopillar (undersurface diameter: 200 nm) for which surface plasmon resonance was observed. The single-crystalline silver nanopillar exhibits a stronger and sharper spectrum than the polycrystalline silver nanopillar. These results can be applied to the direct fabrication of a single-crystalline silver nanopillar using only physical processing.« less

The effect of lanthanum on the fabrication of ZrB{sub 2}-ZrC composites by spark plasma sintering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kyoung Hun; Shim, Kwang Bo

2003-01-15

The effect of the addition of the rare earth element, lanthanum, on the sintering characteristics of ZrB{sub 2}-ZrC composites has been analyzed during a spark plasma sintering (SPS) process. Microscopic observation confirmed that lanthanum accelerated mass transport by the formation of the liquid phase between the particles induced by the spark plasma in the initial stage of the SPS process, and then these were recrystallized to form a lanthanum-containing secondary phase at the grain boundaries and at the grain boundary triple junctions. In spite of the strong covalent bonding characteristics of the ZrB{sub 2}-ZrC composite there are many well-developed dislocationmore » structures observed. The fracture toughness of the lanthanum-containing ZrB{sub 2}-ZrC is about 2.56 MPa m{sup 1/2}, which is comparable to that of the pure composite. Therefore, it is concluded that lanthanum is very effective as a sintering aid for the ZrB{sub 2}-ZrC composite without any degradation of the mechanical properties.« less

Investigation on Explosive Welding of Zr53Cu35Al12 Bulk Metallic Glass with Crystalline Copper

NASA Astrophysics Data System (ADS)

Feng, Jianrui; Chen, Pengwan; Zhou, Qiang

2018-05-01

A Zr53Cu35Al12 bulk metallic glass (BMG) was welded to a crystalline Cu using explosive welding technique. The morphology and the composition of the composite were characterized using optical microscopy, scanning electron microscopy, energy-dispersive x-ray spectroscopy and transmission electron microscopy. The investigation indicated that the BMG and Cu were tightly joined together without visible defects, and a thin diffusion layer appeared at the interface. The captured jet at the end of the welding region mostly comes from the Cu side. Amorphous and partially crystallized structures have been observed within the diffusion layer, but the BMG in close proximity to the interface still retains its amorphous state. Nanoindentation tests reveal that the interface exhibits an increment in hardness compared with the matrix on both sides.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-01

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

PubMed

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-27

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film.

PubMed

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-21

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

NASA Astrophysics Data System (ADS)

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-01

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

NASA Astrophysics Data System (ADS)

Padavala, Balabalaji

The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, Al

Effect of different Zr contents on properties and microstructure of Cu-Cr-Zr alloys

NASA Astrophysics Data System (ADS)

Jinshui, Chen; Bin, Yang; Junfeng, Wang; Xiangpeng, Xiao; Huiming, Chen; Hang, Wang

2018-02-01

The crystallography and morphology of precipitate particles of Cu-Cr-Zr alloys with varying Zr contents were studied by transmission electron microscopy (TEM) after solution treatments at 950 °C for 1 h and aging treatments at 500 °C for different times ranged from 0.5 h to 24 h. The microhardness and electrical conductivity of Cu-Cr-Zr alloys after various aging process were tested. The results show that the microhardness and electrical conductivity rapidly increased at first, then the microhardness decreased slowly after reaching the peak, while the conductivity continues to increase. Nano-scaled precipitates exhibit two kinds of morphology (coffee bean and ellipse shaped). With increasing Zr content, the Zr-containing precipitation sequence of Cu-Cr-Zr alloys at peak-ageing is Heusler CrCu2Zr → Cu5Zr → Cu4Zr. The Heusler CrCu2Zr phase decomposed into fine and homogeneous Cr and Cu4Zr, resulting in improved alloy properties.

Hot corrosion behavior of YSZ, Gd2Zr2O7 and YSZ/Gd2Zr2O7 thermal barrier coatings exposed to molten sulfate and vanadate salt

NASA Astrophysics Data System (ADS)

Ozgurluk, Yasin; Doleker, Kadir Mert; Karaoglanli, Abdullah Cahit

2018-04-01

Thermal barrier coatings (TBCs) are mostly used in critical components of aircraft gas turbine engines. Hot corrosion is among the main deteriorating factors in TBCs which results from the effect of molten salt on the coating-gas interface. This type of corrosion is observed as a result of contamination accumulated during combustion processes. Fuels used in aviation industry generally contain impurities such as vanadium oxide (V2O5) and sodium sulfate (Na2SO4). These impurities damage turbines' inlet at elevated temperatures because of chemical reaction. Yttria stabilized zirconia (YSZ) is a conventional top coating material for TBCs while Gd2Zr2O7 is a new promising top coating material for TBCs. In this study, CoNiCrAlY metallic bond coat was deposited on Inconel 718 nickel based superalloy substrate material with a thickness about 100 μm using cold gas dynamic spray (CGDS) method. Production of TBCs were done with deposition of YSZ, Gd2Zr2O7, YSZ/Gd2Zr2O7 ceramic top coating materials using EB-PVD method, having a total thickness of 300 μm. Hot corrosion behavior of YSZ, Gd2Zr2O7, YSZ/Gd2Zr2O7 TBC systems were exposed to 45 wt.% Na2SO4 and 55 wt.% V2O5 molten salt mixtures at 1000 °C temperature. TBC samples were investigated and compared using scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) analysis and X-ray diffractometer (XRD). The hot corrosion failure mechanisms of YSZ, Gd2Zr2O7 and YSZ/Gd2Zr2O7 TBCs in the molten salts were evaluated.

Internal stresses at the crystalline scale in textured ZrO2 films before lateral cracking

NASA Astrophysics Data System (ADS)

Berdin, Clotilde; Pascal, Serge; Tang, Yan

2015-05-01

Zirconium oxide layers are submitted to internal stresses that play a role in damage of the layer. Lateral cracking is often observed during Zr alloys oxidation. In this paper, we investigated the influence of the microstresses at the crystalline scale on the lateral cracking within a growing oxide on a plane substrate. A parametric study was carried out taking into account the crystallographic texture of the oxide and the presence of a tetragonal zirconia at the metal-oxide interface. Macroscopic computations and polycrystalline aggregate computations were performed. The result indicating the (1 0 6 bar) fiber texture as the most favorable was recovered. It was found that under macroscopic compressive stresses parallel to the plane metal-oxide interface, positive microstresses perpendicular to the interface develops. They can trigger the lateral cracking and the phenomenon is promoted by the presence of tetragonal zirconia at the metal-oxide interface.

Effect of structural evolution on mechanical properties of ZrO2 coated Ti-6Al-7Nb-biomedical application

NASA Astrophysics Data System (ADS)

Zalnezhad, E.

2016-05-01

Zirconia (ZrO2) nanotube arrays were fabricated by anodizing pure zirconium (Zr) coated Ti-6Al-7Nb in fluoride/glycerol electrolyte at a constant potential of 60 V for different times. Zr was deposited atop Ti-6Al-7Nb via a physical vapor deposition magnetron sputtering (PVDMS) technique. Structural investigations of coating were performed utilizing X-ray diffraction (XRD) analysis. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to characterize the morphology and microstructure of coatings. Unannealed ZrO2 nanotube arrays were amorphous. Monoclinic and tetragonal ZrO2 appeared when the coated substrates were heat treated at 450 °C and 650 °C, while monoclinic ZrO2 was found at 850 °C and 900 °C. Mechanical properties, including nanohardness and modulus of elasticity, were evaluated at different annealing temperatures using a nanoindentation test. The nanoindentation results show that the nanohardness and modulus of elasticity for Ti-6AL-7Nb increased by annealing ZrO2 coated substrate at 450 °C. The nanohardness and modulus of elasticity for coated substrate decreased with annealing temperatures of 650, 850, and 900 °C. At an annealing temperature of 900 °C, cracks in the ZrO2 thin film coating occurred. The highest nanohardness and elastic modulus values of 6.34 and 218 GPa were achieved at an annealing temperature of 450 °C.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Membrane transfer of crystalline silicon thin film solar cells

NASA Astrophysics Data System (ADS)

Vempati, Venkata Kesari Nandan

Silicon has been dominating the solar industry for many years and has been touted as the gold standard of the photovoltaic world. The factors for its dominance: government subsidies and ease of processing. Silicon holds close to 90% of the market share in the material being used for solar cell production. Of which 14% belongs to single-crystalline Silicon. Although 24% efficient bulk crystalline solar cells have been reported, the industry has been looking for thin film alternatives to reduce the cost of production. Moreover with the new avenues like flexible consumer electronics opening up, there is a need to introduce the flexibility into the solar cells. Thin film films make up for their inefficiency keeping their mechanical properties intact by incorporating Anti-reflective schemes such as surface texturing, textured back reflectors and low reflective surfaces. This thesis investigates the possibility of using thin film crystalline Silicon for fabricating solar cells and has demonstrated a low cost and energy efficient way for fabricating 2microm thick single crystalline Silicon solar cells with an efficiency of 0.8% and fill factor of 35%.

Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

NASA Astrophysics Data System (ADS)

Lu, Zhongyuan; Serrao, Claudy; Khan, Asif Islam; You, Long; Wong, Justin C.; Ye, Yu; Zhu, Hanyu; Zhang, Xiang; Salahuddin, Sayeef

2017-07-01

We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ˜ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides.

Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

NASA Astrophysics Data System (ADS)

Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat

2006-05-01

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

Synthesis of nano-sized crystalline oxide ion conducting fluorite-type Y 2O 3-doped CeO 2 using perovskite-like BaCe 0.9Y 0.1O 2.95 (BCY) and study of CO 2 capture properties of BCY

NASA Astrophysics Data System (ADS)

Sneha, B. R.; Thangadurai, V.

2007-10-01

Formation of nano-sized Y 2O 3-doped CeO 2 (YCO) was observed in the chemical reaction between proton conducting Y 2O 3-doped BaCeO 3 (BCY) and CO 2 in the temperature range 700-1000 °C, which is generally prepared by wet-chemical methods that include sol-gel, hydrothermal, polymerization, combustion, and precipitation reactions. BCY can capture CO 2 of 0.13 g per ceramic gram at 700 °C, which is comparable to that of the well-known Li 2ZrO 3 (0.15 g per ceramic gram at 600 °C). Powder X-ray diffraction (PXRD), energy dispersive X-ray analysis (EDX), laser particle size analysis (LPSA), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and ac impedance spectroscopy were employed to characterize the reaction product obtained from reaction between BCY and CO 2 and subsequent acid washing. PXRD study reveals presence of fluorite-like CeO 2 ( a=5.410 (1) Å) structure and BaCO 3 in reaction products. TEM investigation of the acid washed product showed the formation of nano-sized material with particle sizes of about 50 nm. The electrical conductivity of acid washed product (YCO) in air was found to be about an order higher than the undoped CeO 2 reported in the literature.

Laser micro-processing of amorphous and partially crystalline Cu45Zr48Al7 alloy

NASA Astrophysics Data System (ADS)

Aqida, S. N.; Brabazon, D.; Naher, S.; Kovacs, Z.; Browne, D. J.

2010-11-01

This paper presents a microstructural study of laser micro-processed high-purity Cu45Zr48Al7 alloys prepared by arc melting and Cu-mould casting. Microprocessing of the Cu45Zr48Al7 alloy was performed using a Rofin DC-015 diffusion-cooled CO2 slab laser system with 10.6-μm wavelength. The laser was defocused to a spot size of 0.2 mm on the sample surface. The laser parameters were set to give 300- and 350-W peak power, 30% duty cycle and a 3000-Hz laser pulse repetition frequency (PRF). About 100-micrometer-wide channels were scribed on the surfaces of disk-shaped amorphous and partially crystalline samples at traverse speeds of 500 and 5000 mm/min. These channels were analysed using scanning electron microscopy (SEM) and 2D stylus profilometry. The metallographic study and profile of these processed regions are discussed in terms of the applied laser processing parameters. The SEM micrographs showed that striation marks developed at the edge and inside these regions as a result of the laser processing. The results from this work showed that microscale features can be produced on the surface of amorphous Cu-Zr-Al alloys by CO2 laser processing.

ZrO2 film interfaces with Si and SiO2

NASA Astrophysics Data System (ADS)

Lopez, C. M.; Suvorova, N. A.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

2005-08-01

The interface formed by the thermal oxidation of sputter-deposited Zr metal onto Si(100)- and SiO2-coated Si(100) wafers was studied in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5-4.5 photon energy range and mass spectrometry of recoiled ions (MSRI). SE yielded optical properties for the film and interface and MSRI yielded film and interface composition. An optical model was developed and verified using transmission electron microscopy. Interfacial reaction of the ZrO2 was observed for both substrates, with more interaction for Si substrates. Equivalent oxide thicknesses and interface trap levels were determined on capacitors with lower trap levels found on samples with a thicker SiO2 underlayer. In addition to the optical properties for the intermixed interface layer, the optical properties for Zr metal and unreacted ZrO2 are also reported.

The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

NASA Astrophysics Data System (ADS)

Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

2014-07-01

We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a < 1.07 grown on SrTiO3 (001) substrates, which results in significant frequency dispersion of the dielectric constant and strong Rayleigh type behavior in those samples. This combined structural-electrical study provides a framework for investigating strain relaxation in thin films and can provide useful insights into the mechanisms of fatigue in ferroelectric materials.

The solubility and site preference of Fe3+ in Li7−3xFexLa3Zr2O12 garnets

PubMed Central

Rettenwander, D.; Geiger, C.A.; Tribus, M.; Tropper, P.; Wagner, R.; Tippelt, G.; Lottermoser, W.; Amthauer, G.

2015-01-01

A series of Fe3+-bearing Li7La3Zr2O12 (LLZO) garnets was synthesized using solid-state synthesis methods. The synthetic products were characterized compositionally using electron microprobe analysis and inductively coupled plasma optical emission spectroscopy (ICP-OES) and structurally using X-ray powder diffraction and 57Fe Mössbauer spectroscopy. A maximum of about 0.25 Fe3+ pfu could be incorporated in Li7−3xFexLa3Zr2O12 garnet solid solutions. At Fe3+ concentrations lower than about 0.16 pfu, both tetragonal and cubic garnets were obtained in the synthesis experiments. X-ray powder diffraction analysis showed only a garnet phase for syntheses with starting materials having intended Fe3+ contents lower than 0.52 Fe3+ pfu. Back-scattered electron images made with an electron microprobe also showed no phase other than garnet for these compositions. The lattice parameter, a0, for all solid-solution garnets is similar with a value of a0≈12.98 Å regardless of the amount of Fe3+. 57Fe Mössbauer spectroscopic measurements indicate the presence of poorly- or nano-crystalline FeLaO3 in syntheses with Fe3+ contents greater than 0.16 Fe3+ pfu. The composition of different phase pure Li7−3xFexLa3Zr2O12 garnets, as determined by electron microprobe (Fe, La, Zr) and ICP-OES (Li) measurements, give Li6.89Fe0.03La3.05Zr2.01O12, Li6.66Fe0.06La3.06Zr2.01O12, Li6.54Fe0.12La3.01Zr1.98O12, and Li6.19Fe0.19La3.02Zr2.04O12. The 57Fe Mössbauer spectrum of cubic Li6.54Fe0.12La3.01Zr1.98O12 garnet indicates that most Fe3+ occurs at the special crystallographic 24d position, which is the standard tetrahedrally coordinated site in garnet. Fe3+ in smaller amounts occurs at a general 96h site, which is only present for certain Li-oxide garnets, and in Li6.54Fe0.12La3.01Zr1.98O12 this Fe3+ has a distorted 4-fold coordination. PMID:26435549

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

PubMed Central

Mahadeva, Sreekanth K.; Fan, Jincheng; Biswas, Anis; Sreelatha, K.S.; Belova, Lyubov; Rao, K.V.

2013-01-01

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies. PMID:28348346

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

NASA Astrophysics Data System (ADS)

Lee, Juhyun; Lee, Jeongsu; Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Choi, Hyeongsu; Lee, Seungjin; Kim, Juyoung; Sul, Onejae; Lee, Seungbeck; Jeon, Hyeongtag

2017-02-01

We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 °C using ALD, and we then annealed at 300 °C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9° and A1g mode at 313 cm-1. The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p++Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39×103 to 6.39×103 and a mobility of from 0.0076 cm2/Vs to 0.06 cm2/Vs.